Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...
2016-10-31
Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complexmore » polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less
Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; Su, Dong; Chen, Long-Qing; Huang, Guanzhong; Munroe, Paul R.; Valanoor, Nagarajan
2016-10-31
Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr_{x}Ti_{1-x}O_{3} (PZT)/rhombohedral (R) PbZr_{x}Ti_{1-x}O_{3} (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
NASA Astrophysics Data System (ADS)
Agar, J. C.; Damodaran, A. R.; Okatan, M. B.; Kacher, J.; Gammer, C.; Vasudevan, R. K.; Pandya, S.; Dedon, L. R.; Mangalam, R. V. K.; Velarde, G. A.; Jesse, S.; Balke, N.; Minor, A. M.; Kalinin, S. V.; Martin, L. W.
2016-05-01
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr1-xTixO3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Damodaran, Anoop; Okatan, M. B.; Kacher, J.; ...
2016-02-15
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr1-xTixO3 heterostructuresmore » stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Damodaran, Anoop; Okatan, M. B.; Kacher, J.; Gammer, C.; Vasudevan, Rama; Pandya, S.; Dedon, L. R.; Mangalam, R. V.; Jesse, Stephen; Balke, Nina; Minor, Andrew; Kalinin, Sergei V.; Martin, Lane W. W.
2016-02-15
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr_{1-x}Ti_{x}O_{3} heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.
A Domain Wall Model for Hysteresis in Ferroelastic Materials
2002-01-01
are a distinguishable class of ferroelastics that recover from up to 10% deformations via stress and temperature-induced phase transformations. SMAs...simulations, and their solution requires techniques such as Monte Carlo methods that have a high computational cost. Another class of mesoscopic models...solely determines the symmetry-breaking mechanism, instead is expressed in terms of normal mode components of lattice modulation wave vectors [2, 3, 46
Ferroelastic domain switching dynamics under electrical and mechanical excitations
NASA Astrophysics Data System (ADS)
Gao, Peng; Britson, Jason; Nelson, Christopher T.; Jokisaari, Jacob R.; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M.; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing
2014-05-01
In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.
Order-parameter profiles across domain walls arising in ferroelastic phase transitions
NASA Astrophysics Data System (ADS)
Hatt, Richard A.
1998-12-01
A method for deriving a mathematical description of order-parameter profiles is given. Significant use of group theoretical methods and the Landau model of phase transitions is made. The method concentrates on the inclusion of strain as an order parameter, and demonstrates how it is incorporated and calculated. Symmetry is used to reduce the number of independent parameters. Differential equations are derived from a Landau free energy using the Euler Lagrange equations, and solutions of these equations are presented and discussed. The solutions for both antiphase twins and orientation twins are presented. It is shown that order-parameter components whose values are zero far from the wall in both directions are identically zero. The ferroelastic transition in lead orthovanadate, Pb3(VO4)2, is used as the prototype for the development. The method can easily be generalized to a large number of similar systems, giving the results broad applicability.
Definition and geometrical consideration of the domain walls of Pb3(PO4)2 ferroelastic crystals
NASA Astrophysics Data System (ADS)
Jeong, Se-Young; Jang, Min-Su; Lim, Ae-Ran
1993-11-01
Pb3(PO4)2 has two types of domain walls, the W wall and the W' wall. However, both types of domain walls in Pb3(PO4)2 belong to the W wall, because they both can be represented as crystallographically prominent planes of fixed indices. We will call them the Wm wall and the Wb wall instead of the W wall and the W' wall, respectively. The z axis of the prototypic phase is not parallel but a little inclined to the normal of (100). Local reorientations in a narrow temperature range near Tc cause superpositions of small inclined z axes above 180 °C, which give a small birefringence at the conoscope image.
Polar nature of stress-induced twin walls in ferroelastic CaTiO3
NASA Astrophysics Data System (ADS)
Yokota, H.; Niki, S.; Haumont, R.; Hicher, P.; Uesu, Y.
2017-08-01
A compressive uniaxial mechanical stress is applied on ferroelastic CaTiO3 (CTO), and a change in the domain structure is observed under a polarization microscope and a second harmonic generation (SHG) microscope. New twin walls (TWs) appear perpendicular to the original TWs under stress. The SHG microscope observations and analyses confirm that this type of stress-induced TWs is polar, similar to the original TWs, and is crystallographically prominent with monoclinic symmetry m. A quantitative estimation of this stress-induced effect reveals that CTO is hard ferroelastic in the sense that the TW movement requires a large stress. A possible application of this phenomenon is discussed.
Strain phase separation: Formation of ferroelastic domain structures
NASA Astrophysics Data System (ADS)
Xue, Fei; Li, Yongjun; Gu, Yijia; Zhang, Jinxing; Chen, Long-Qing
2016-12-01
Phase decomposition is a well-known process leading to the formation of two-phase mixtures. Here we show that a strain imposed on a ferroelastic crystal promotes the formation of mixed phases and domains, i.e., strain phase separation with local strains determined by a common tangent construction on the free energy versus strain curves. It is demonstrated that a domain structure can be understood using the concepts of domain/phase rule, lever rule, and coherent and incoherent strain phase separation, in a complete analogy to phase decomposition. The proposed strain phase separation model is validated using phase-field simulations and experimental observations of PbTi O3 and BiFe O3 thin films as examples. The proposed model provides a simple tool to guide and design domain structures of ferroelastic systems.
Twinning, Epitaxy and Domain Switching in Ferroelastic Inclusion Compounds
NASA Technical Reports Server (NTRS)
Hollingsworth, Mark D.; Peterson, Matthew L.
2003-01-01
Our research is in the area of solid-state organic chemistry, which lies at the interface between physical organic chemistry and materials science. We use crystalline solids as models to probe fundamental issues about physical processes, molecular interactions and chemical reactions that are important for fabrication, stabilization and application of technological materials. Much of our most recent work has focused on the phenomena of ferroelastic and ferroelectric domain switching, in which application of an external force or electric field to a crystal causes the molecules inside the crystal to reorient, in tandem, to a new orientational state. To better understand and control the domain switching process, we have designed and synthesized over twenty closely related, ferroelastic organic crystals. Our approach has been to use crystalline inclusion compounds, in which one molecule (the guest) is trapped within the crystalline framework of a second molecule (the host). By keeping the host constant and varying the proportions and kinds of guests, it has been possible to tailor these materials so that domain switching is rapid and reversible (which is desirable for high technology applications). Inclusion compounds therefore serve as powerful systems for understanding the specific molecular mechanisms that control domain switching.
Domain structure and magnetic resonance studies of ferroelastic BiVO4 revisited
NASA Astrophysics Data System (ADS)
Choh, Sung Ho; Jang, Min Su
2016-04-01
Bismuth vanadate (BiVO4) is a ferroelastic material undergoing a reversible second order phase transition at 528 K(T c) between the tetragonal and monoclinic structure. There have been experimental studies on the incommensurate domain wall (W‧) which reported different orientation angles. In order to clarify this we have tried to calculate it numerically in terms of lattice constants above and below T c by employing the theory of Sapriel, and obtained it to be either 35.9° or 54.1°. It also turns out that the shear strain (S 21) in the ferroelastic phase depends on the crystal growing condition. The remaining internal stress appears to be responsible for the formation of W‧ wall. The host atom nuclear magnetic resonance and the S-state impurity electron magnetic resonance are also reviewed. The nuclear electric quadrupole interaction of 51V and 209Bi in BiVO4 was evaluated in terms of the point charge model based on the crystal structure. The result of electric field gradient tensor turns out to be reasonable with experimental values. The zero-field splitting tensor of Mn2+, Fe3+ and Gd3+ are also compared, and the deduced local environment of these ions in the host are confirmed. Finally the second-order phase transition according to the Landau’s framework is found in this crystal from the temperature dependence of magnetic resonance parameters. Supported by The National Academy of Sciences, Republic of Korea (2014) through SHC.
Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O{sub 3} thin films
Feigl, L.; McGilly, L. J.; Sandu, C. S.; Setter, N.
2014-04-28
Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr,Ti)O{sub 3} thin films, of very low defect density, grown on DyScO{sub 3} substrates. The effect of 180° switching on well-ordered a/c 90° domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement.
Phillips, L. C.; Cherifi, R. O.; Ivanovskaya, V.; Zobelli, A.; Infante, I. C.; Jacquet, E.; Guiblin, N.; Ünal, A. A.; Kronast, F.; Dkhil, B.; Barthélémy, A.; Bibes, M.; Valencia, S.
2015-01-01
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling between different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific X-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetic and antiferromagnetic states with a small electric field just above room temperature. Imaging and ab initio calculations show the antiferromagnetic phase of FeRh is favoured by compressive strain on c-oriented BaTiO3 domains, and the resultant magnetoelectric coupling is larger and more reversible than previously reported from macroscopic measurements. Our results emphasize the importance of nanoscale ferroic domain structure and the promise of first-order transition materials to achieve enhanced coupling in artificial multiferroics. PMID:25969926
NASA Astrophysics Data System (ADS)
Feigl, L.; Janolin, P.-E.; Yamada, T.; Iwanowska, M.; Sandu, C. S.; Setter, N.
2015-01-01
The dependence of the formation of ferroelastic stripe domain patterns on the thermal history is investigated by detailed piezoresponse force microscopy and X-ray diffraction experiments after and during annealing of tensile strained tetragonal Pb(Ti,Zr)O3 epitaxial thin films on DyScO3 substrates. In particular, the ferroelastic pattern is reversibly interchanged between a cross-hatched and a stripe domain pattern if the films are cooled at different rates after annealing above the formation temperature of a-domains. Different types of 180° and non-180° patterns can be created, depending on the thermal treatment. The changes in the 180° domain structure and lattice parameters are attributed to a change of oxygen vacancy concentration, which results in a modification of the internal electric field and unit cell size, causing also a shift of TC. Thermal treatment is done on rhombohedral La:BiFeO3 thin films as well. It is observed that also in these films, appropriate heat treatment modifies the domain pattern and films with a stripe domain pattern can be created, confirming the general validity of the developed model.
Moving Towards Domain Wall Devices in Ferroics
NASA Astrophysics Data System (ADS)
Gregg, Marty
Domain walls in ferroelectric, ferroelastic and multiferroic oxides are distinct functional materials in their own right. They can be conducting, or even superconducting, when surrounding domains are insulating; they can demonstrate magnetism when the surrounding bulk is non-magnetic and they can contain ordered electrical dipoles when the matrix containing them is non-polar. Since domain walls can also be created, destroyed, and controllably moved from place to place, there is an amazing opportunity for us to design new forms of devices in which functionality is actively and dynamically deployed (now you see it; now you don't). This is the essence of the emerging field known as ``domain wall nanoelectronics''. In time, this arena of research could change the way we think of nanoscale functional devices, moving increasingly towards agile circuitry and neuromorphic device architectures. While the control of domain wall injection, movement and annihilation has been developed rather well in the nanomagnetics community (in race-track and domain wall logic research), similar research has not been widely performed in nanoscale ferroelectrics, ferroelastics and multiferroics. This talk will discuss progress that has been made to date and the way in which nanomagnetics research can be used as a source of inspiration. Site-specific domain wall injection and motion control in both proper and improper ferroelectrics using inhomogeneous electric and elastic fields, as well as dielectric patterning in uniaxial ferroelectrics, will be specifically considered. As will be shown, sufficient control has been developed to allow the creation of a diode for domain wall motion in ferroelectrics, for example. The author acknowledges support from the Engineering and Physical Sciences Research Council (EPSRC).
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV permore » chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Furthermore, monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.« less
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Furthermore, monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-01-01
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T′. The low-symmetry 1T′ phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T′ phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Monolayers of transition metal dichalcogenides with 1T′ structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics. PMID:26906152
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers.
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.
NASA Astrophysics Data System (ADS)
Van de Wiele, Ben; Leliaert, Jonathan; Franke, Kévin J. A.; van Dijken, Sebastiaan
2016-03-01
Strong coupling of magnetic domain walls onto straight ferroelastic boundaries of a ferroelectric layer enables full and reversible electric-field control of magnetic domain wall motion. In this paper, the dynamics of this new driving mechanism is analyzed using micromagnetic simulations. We show that transverse domain walls with a near-180° spin structure are stabilized in magnetic nanowires and that electric fields can move these walls with high velocities. Above a critical velocity, which depends on material parameters, nanowire geometry and the direction of domain wall motion, the magnetic domain walls depin abruptly from the ferroelastic boundaries. Depinning evolves either smoothly or via the emission and annihilation of a vortex or antivortex core (Walker breakdown). In both cases, the magnetic domain wall slows down after depinning in an oscillatory fashion and eventually comes to a halt. The simulations provide design rules for hybrid ferromagnetic-ferroelectric domain-wall-based devices and indicate that material disorder and structural imperfections only influence Walker-breakdown-like depinning at high domain wall velocities.
Nakajima, Mitsumasa; Wada, Ayumi; Ehara, Yoshitaka; Funakubo, Hiroshi; Yamada, Tomoaki; Kobayashi, Takeshi
2014-11-21
The effects of bipolar pulse poling on the ferroelastic domain structure and their contribution to the electrical and piezoelectric properties of Pb(Ti{sub 0.7}Zr{sub 0.3})O{sub 3} films are investigated. Micro x-ray diffraction measurements clearly show that the volume fraction of the c-domain increases irreversibly as the poling field is increased, leading to changes in the remanent polarization, dielectric constant, and piezoelectric coefficient. Theoretical estimations well explain the changes of remanent polarization and dielectric constant, but the increase in piezoelectric coefficient is much larger than the theoretical estimation. In-situ x-ray diffraction analysis under an electric field reveals that this disagreement is due to the unexpected activation of the ferroelastic domain wall motion. Our results provide new insight into the poling effect on the electric and piezoelectric properties of ferroelectric films.
Depner, Sean W; Cultrara, Nicholas D; Farley, Katie E; Qin, Yueling; Banerjee, Sarbajit
2014-05-27
We demonstrate that the degree of branching of the alkyl (R) chain in a Hf(OR)4 precursor allows for control over the length of HfO2 nanocrystals grown by homocondensation of the metal alkoxide with a metal halide. An extended nonhydrolytic sol-gel synthesis has been developed that enables the growth of high aspect ratio monoclinic HfO2 nanorods that grow along the [100] direction. The solution-grown elongated HfO2 nanorods show remarkable organization of twin domains separated by (100) coherent twin boundaries along the length of the nanowires in a morphology reminiscent of shape memory alloys. The sequence of finely structured twin domains each spanning only a few lattice planes originates from the Martensitic transformation of the nanorods from a tetragonal to a monoclinic structure upon cooling. Such ferroelastic domain organization is uncharacteristic of metal oxides and has not thus far been observed in bulk HfO2. The morphologies observed here suggest that, upon scaling to nanometer-sized dimensions, HfO2 might exhibit mechanical properties entirely distinctive from the bulk.
NASA Astrophysics Data System (ADS)
Avelino, P. P.; Ferreira, V. M. C.; Menezes, J.; Sousa, L.
2017-08-01
We consider a model with two real scalar fields which admits phantom domain wall solutions. We investigate the structure and evolution of these phantom domain walls in an expanding homogeneous and isotropic universe. In particular, we show that the increase of the tension of the domain walls with cosmic time, associated to the evolution of the phantom scalar field, is responsible for an additional damping term in their equations of motion. We describe the macroscopic dynamics of phantom domain walls, showing that extended phantom defects whose tension varies on a cosmological time scale cannot be the dark energy.
Baer, Oliver; Narayanan, Rajamani; Neuberger, Herbert; Witzel, Oliver
2007-03-15
We propose using the extra dimension separating the domain walls carrying lattice quarks of opposite handedness to gradually filter out the ultraviolet fluctuations of the gauge fields that are felt by the fermionic excitations living in the bulk. This generalization of the homogeneous domain wall construction has some theoretical features that seem nontrivial.
Tselev, Alexander; Strelcov, Evgheni; Lukyanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Aandrei
2010-07-06
Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Tselev, Alexander; Strelcov, Evgheni; Lukyanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Andrei
2011-08-09
Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Optical and Acoustic Device Applications of Ferroelastic Crystals
NASA Astrophysics Data System (ADS)
Meeks, Steven Wayne
This dissertation presents the discovery of a means of creating uniformly periodic domain gratings in a ferroelastic crystal of neodymium pentaphosphate (NPP). The uniform and non-uniform domain structures which can be created in NPP have the potential applications as tunable active gratings for lasers, tunable diffraction gratings, tunable Bragg reflection gratings, tunable acoustic filters, optical modulators, and optical domain wall memories. The interaction of optical and acoustic waves with ferroelastic domain walls in NPP is presented in detail. Acoustic amplitude reflection coefficients from a single domain wall in NPP are much larger than other ferroelastic-ferroelectrics such as gadolinium molybdate (GMO). Domain walls of NPP are used to make two demonstration acoustic devices: a tunable comb filter and a tunable delay line. The tuning process is accomplished by moving the position of the reflecting surface (the domain wall). A theory of the reflection of optical waves from NPP domain walls is discussed. The optical reflection is due to a change in the polarization of the wave, and not a change in the index, as the wave crosses the domain wall. Theoretical optical power reflection coefficients show good agreement with the experimentally measured values. The largest optical reflection coefficient of a single domain wall is at a critical angle and is 2.2% per domain wall. Techniques of injecting periodic and aperiodic domain walls into NPP are presented. The nucleation process of the uniformly periodic domain gratings in NPP is described in terms of a newly-discovered domain structure, namely the ferroelastic bubble. A ferroelastic bubble is the elastic analogue to the well-known magnetic bubble. The period of the uniformly periodic domain grating is tunable from 100 to 0.5 microns and the grating period may be tuned relatively rapidly. The Bragg efficiency of these tunable gratings is 77% for an uncoated crystal. Several demonstration devices which use
Axion domain wall baryogenesis
Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu
2015-07-28
We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m≃10{sup 8}–10{sup 13} GeV and f≃10{sup 13}–10{sup 16} GeV. Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.
Axion domain wall baryogenesis
Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu E-mail: kitajima@tuhep.phys.tohoku.ac.jp
2015-07-01
We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m ≅ 10{sup 8}–10{sup 13} GeV and f ≅ 10{sup 13}–10{sup 16} GeV . Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.
Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8
NASA Astrophysics Data System (ADS)
Butykai, Ádám; Bordács, Sándor; Kézsmárki, István; Tsurkan, Vladimir; Loidl, Alois; Döring, Jonathan; Neuber, Erik; Milde, Peter; Kehr, Susanne C.; Eng, Lukas M.
2017-03-01
GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four <111> axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.
Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8
Butykai, Ádám; Bordács, Sándor; Kézsmárki, István; Tsurkan, Vladimir; Loidl, Alois; Döring, Jonathan; Neuber, Erik; Milde, Peter; Kehr, Susanne C.; Eng, Lukas M.
2017-01-01
GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four 〈111〉 axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions. PMID:28294193
Runaway dilatonic domain walls
Aguirre, Anthony; Johnson, Matthew C.; Larfors, Magdalena
2010-02-15
We explore the stability of domain wall and bubble solutions in theories with compact extra dimensions. The energy density stored inside of the wall can destabilize the volume modulus of a compactification, leading to solutions containing either a timelike singularity or a region where space decompactifies, depending on the metric ansatz. We determine the structure of such solutions both analytically and using numerical simulations, and analyze how they arise in compactifications of Einstein-Maxwell theory and type IIB string theory. The existence of instabilities has important implications for the formation of networks of topological defects and the population of vacua during eternal inflation.
Tselev, Alexander; Strelcov, Evgheni; Luk'yanchuk, Prof. Igor A.; Ivanov, Ilia N; Budai, John D; Tischler, Jonathan Zachary; Jones, Keith M; Proksch, Roger; Kalinin, Sergei V; Kolmakov, Andrei
2010-01-01
Formation of ferroelastic twin domains in VO_2 nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline vanadium dioxide (VO_2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and non-trivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that complete picture of the phase transitions in single-crystalline and disordered VO_2 structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Electric-field control of magnetic domain wall motion and local magnetization reversal
Lahtinen, Tuomas H. E.; Franke, Kévin J. A.; van Dijken, Sebastiaan
2012-01-01
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics. PMID:22355770
Structure of axionic domain walls
NASA Astrophysics Data System (ADS)
Huang, M. C.; Sikivie, P.
1985-09-01
The structure of axionic domain walls is investigated using the low-energy effective theory of axions and pions. We derive the spatial dependence of the phases of the Peccei-Quinn scalar field and the QCD quark-antiquark condensates inside an axionic domain wall. Thence an accurate estimate of the wall surface energy density is obtained. The equations of motion for axions, photons, leptons, and baryons in the neighborhood of axionic domain walls are written down and estimates are given for the wall reflection and transmission coefficients of these particles. Finally, we discuss the energy dissipation by axionic domain walls oscillating in the early universe due to the reflection of particles in the primordial soup.
Tsukada, Y.; Honma, T.; Komatsu, T.
2009-08-15
Ferroelastic beta'-Gd{sub 2}(MoO{sub 4}){sub 3}, (GMO), crystals are formed through the crystallization of 21.25Gd{sub 2}O{sub 3}-63.75MoO{sub 3}-15B{sub 2}O{sub 3} glass (mol%), and two scientific curious phenomena are observed. (1) GMO crystals formed in the crystallization break into small pieces with a triangular prism or pyramid shape having a length of 50-500 {mu}m spontaneously during the crystallizations in the inside of an electric furnace, not during the cooling in air after the crystallization. This phenomenon is called 'self-powdering phenomenon during crystallization' in this paper. (2) Each self-powdered GMO crystal grain shows a periodic domain structure with different refractive indices, and a spatially periodic second harmonic generation (SHG) depending on the domain structure is observed. It is proposed from polarized micro-Raman scattering spectra and the azimuthal dependence of second harmonic intensities that GMO crystals are oriented in each crystal grain and the orientation of (MoO{sub 4}){sup 2-} tetrahedra in GMO crystals changes periodically due to spontaneous strains in ferroelastic GMO crystals. - Graphical abstract: This figure shows the polarized optical photograph at room temperature for a particle (piece) obtained by a heat treatment of the glass at 590 deg. C for 2 h in an electric furnace in air. This particle was obtained through the self-powdering behavior in the crystallization of glass. The periodic domain structure is observed. Ferroelastic beta'-Gd{sub 2}(MoO{sub 4}){sub 3} crystals are formed in the particle, and second harmonic generations are detected, depending on the domain structure.
Karapetrov, G.; Novosad, V.; Materials Science Division
2010-11-01
Recent years have witnessed a rapid proliferation of electronic gadgets around the world. These devices are used for both communication and entertainment, and it is a fact that they account for a growing portion of household energy consumption and overall world consumption of electricity. Increasing the energy efficiency of these devices could have a far greater and immediate impact than a gradual switch to renewable energy sources. The advances in the area of spintronics are therefore very important, as gadgets are mostly comprised of memory and logic elements. Recent developments in controlled manipulation of magnetic domains in ferromagnet nanostructures have opened opportunities for novel device architectures. This new class of memories and logic gates could soon power millions of consumer electronic devices. The attractiveness of using domain-wall motion in electronics is due to its inherent reliability (no mechanical moving parts), scalability (3D scalable architectures such as in racetrack memory), and nonvolatility (retains information in the absence of power). The remaining obstacles in widespread use of 'racetrack-type' elements are the speed and the energy dissipation during the manipulation of domain walls. In their recent contribution to Physical Review Letters, Oleg Tretiakov, Yang Liu, and Artem Abanov from Texas A&M University in College Station, provide a theoretical description of domain-wall motion in nanoscale ferromagnets due to the spin-polarized currents. They find exact conditions for time-dependent resonant domain-wall movement, which could speed up the motion of domain walls while minimizing Ohmic losses. Movement of domain walls in ferromagnetic nanowires can be achieved by application of external magnetic fields or by passing a spin-polarized current through the nanowire itself. On the other hand, the readout of the domain state is done by measuring the resistance of the wire. Therefore, passing current through the ferromagnetic wire is
Revealing and understanding the behavior of structural domain walls from first principles
NASA Astrophysics Data System (ADS)
Iniguez, Jorge
2015-03-01
Ferroelectric and ferroelastic domain walls (DWs) are becoming the focus of renewed excitement. Modern experimental techniques permit an unprecedented control on domain structures, and it is now possible to produce materials with a large volume fraction occupied by the DWs themselves. Also, recent experiments show that DWs can display distinct properties not present in the domains, which suggests the possibility of using the walls themselves as the functional material in nano-devices. In this talk I will review recent projects in which we have used theory and first-principles simulation to reveal and explain a variety of DW-related effects. The presentation will include the formation of novel two-dimensional crystals at the DWs of a ferroelastic material, the occurrence of ferroic orders (ferroelectric, ferromagnetic) confined at the DWs of various compounds, and cases in which peculiar (and useful) response and switching properties relie on existence of a multi-domain state. I will also summarize experimental evidence for most of these incredible findings, which clearly ratify domain and domain-wall engineering as a powerful strategy to obtain novel functional nano-materials. // Work done in collaboration with many researchers, the main ones being: J.C. Wojdeł (ICMAB-CSIC), C. Magén (INA at U. Zaragoza), M. Mostovoy (U. Groningen), P. Zubko (U. College London), as well as the groups of Beatriz Noheda (U. Groningen), R. Ramesh (UC Berkeley) and J.-M. Triscone (U. Geneva). Supported by MINECO-Spain.
Electric-field-driven domain wall dynamics in perpendicularly magnetized multilayers
NASA Astrophysics Data System (ADS)
López González, Diego; Shirahata, Yasuhiro; Van de Wiele, Ben; Franke, Kévin J. A.; Casiraghi, Arianna; Taniyama, Tomoyasu; van Dijken, Sebastiaan
2017-03-01
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO3 substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO3 substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO3 substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. The application of a magnetic field does not affect the velocity of magnetic domain walls, but independently tailors their internal spin structure, causing a change in domain wall dynamics at high velocities.
Visualizing domain wall and reverse domain superconductivity.
Iavarone, M; Moore, S A; Fedor, J; Ciocys, S T; Karapetrov, G; Pearson, J; Novosad, V; Bader, S D
2014-08-28
In magnetically coupled, planar ferromagnet-superconductor (F/S) hybrid structures, magnetic domain walls can be used to spatially confine the superconductivity. In contrast to a superconductor in a uniform applied magnetic field, the nucleation of the superconducting order parameter in F/S structures is governed by the inhomogeneous magnetic field distribution. The interplay between the superconductivity localized at the domain walls and far from the walls leads to effects such as re-entrant superconductivity and reverse domain superconductivity with the critical temperature depending upon the location. Here we use scanning tunnelling spectroscopy to directly image the nucleation of superconductivity at the domain wall in F/S structures realized with Co-Pd multilayers and Pb thin films. Our results demonstrate that such F/S structures are attractive model systems that offer the possibility to control the strength and the location of the superconducting nucleus by applying an external magnetic field, potentially useful to guide vortices for computing application.
Visualizing domain wall and reverse domain superconductivity
Iavarone, M.; Moore, S. A.; Fedor, J.; Ciocys, S. T.; Karapetrov, G.; Pearson, J.; Novosad, V.; Bader, S. D.
2014-01-01
In magnetically coupled, planar ferromagnet-superconductor (F/S) hybrid structures, magnetic domain walls can be used to spatially confine the superconductivity. In contrast to a superconductor in a uniform applied magnetic field, the nucleation of the superconducting order parameter in F/S structures is governed by the inhomogeneous magnetic field distribution. The interplay between the superconductivity localized at the domain walls and far from the walls leads to effects such as re-entrant superconductivity and reverse domain superconductivity with the critical temperature depending upon the location. Here we use scanning tunnelling spectroscopy to directly image the nucleation of superconductivity at the domain wall in F/S structures realized with Co-Pd multilayers and Pb thin films. Our results demonstrate that such F/S structures are attractive model systems that offer the possibility to control the strength and the location of the superconducting nucleus by applying an external magnetic field, potentially useful to guide vortices for computing application. PMID:25164004
Domain Walls in Bent Nanowires
NASA Astrophysics Data System (ADS)
Lofink, F.; Philippi-Kobs, A.; Rahbar Azad, M. R.; Hankemeier, S.; Hoffmann, G.; Frömter, R.; Oepen, H. P.
2017-08-01
The influence of geometric parameters on the magnetic fine structure of domain walls in bent nanowires is investigated. The domain pattern in the soft-magnetic Co39Fe54Si7 alloy is studied via scanning electron microscopy with polarization analysis and modeled via micromagnetic simulations. It is demonstrated that the bending angle affects details of the microstructure as well as the preponderant domain-wall type. A phenomenological model is developed that provides the global energy minimum of individual types of domain walls as a function of the geometric parameters of the wire. The results can be directly transferred to permalloy wires, as permalloy and Co39Fe54Si7 alloy have a comparable magnetostatic exchange length.
NASA Astrophysics Data System (ADS)
Tsukada, Y.; Honma, T.; Komatsu, T.
2009-08-01
Ferroelastic β'-Gd 2(MoO 4) 3, (GMO), crystals are formed through the crystallization of 21.25Gd 2O 3-63.75MoO 3-15B 2O 3 glass (mol%), and two scientific curious phenomena are observed. (1) GMO crystals formed in the crystallization break into small pieces with a triangular prism or pyramid shape having a length of 50-500 μm spontaneously during the crystallizations in the inside of an electric furnace, not during the cooling in air after the crystallization. This phenomenon is called "self-powdering phenomenon during crystallization" in this paper. (2) Each self-powdered GMO crystal grain shows a periodic domain structure with different refractive indices, and a spatially periodic second harmonic generation (SHG) depending on the domain structure is observed. It is proposed from polarized micro-Raman scattering spectra and the azimuthal dependence of second harmonic intensities that GMO crystals are oriented in each crystal grain and the orientation of (MoO 4) 2- tetrahedra in GMO crystals changes periodically due to spontaneous strains in ferroelastic GMO crystals.
Baryogenesis from unstable domain walls
NASA Astrophysics Data System (ADS)
Ben-Menahem, Shahar; Cooper, Adrian R.
1992-12-01
There exists a class of cosmic strings that turn matter into antimatter (Alice strings). In a GUT where the unbroken gauge group contains charge conjugation (C), such strings form when a phase transition renders C a discrete symmetry. They become boundaries of domain walls at a later, C-breaking transition. These ``Alice walls'' are cosmologically harmless, but can play an important role in baryogenesis. We present a three-generation toy model with scalar baryons, where a quasi-static Alice wall (or a gas of such walls) temporarily gives rise to net baryogenesis of uniform sign everywhere in space. This becomes a permanent baryon excess if the wall shrinks away early enough. We comment on the possible relevance of a similar mechanism to baryogenesis in a realistic SO(10) unification model, where Alice walls would form at the scale of left-right symmetry breaking.
Functional domain walls in multiferroics.
Meier, Dennis
2015-11-25
During the last decade a wide variety of novel and fascinating correlation phenomena has been discovered at domain walls in multiferroic bulk systems, ranging from unusual electronic conductance to inseparably entangled spin and charge degrees of freedom. The domain walls represent quasi-2D functional objects that can be induced, positioned, and erased on demand, bearing considerable technological potential for future nanoelectronics. Most of the challenges that remain to be solved before turning related device paradigms into reality, however, still fall in the field of fundamental condensed matter physics and materials science. In this topical review seminal experimental findings gained on electric and magnetic domain walls in multiferroic bulk materials are addressed. A special focus is put on the physical properties that emerge at so-called charged domain walls and the added functionality that arises from coexisting magnetic order. The research presented in this review highlights that we are just entering a whole new world of intriguing nanoscale physics that is yet to be explored in all its details. The goal is to draw attention to the persistent challenges and identify future key directions for the research on functional domain walls in multiferroics.
NASA Astrophysics Data System (ADS)
Zednik, Ricardo; McIntyre, Paul
2007-03-01
Wafer curvature methods can be used to impose pure biaxial tensile and compressive stresses on thin-films. This makes it possible to study the isolated effects of biaxial stress on the ferroelastic domains in ultra-fine grained PZT. Electrical measurements, such as capacitance-voltage and polarization-field hysteresis, were conducted as a function of applied stress and complemented with in-situ high resolution synchrotron X-ray diffraction measurements performed at the Stanford Synchrotron Radiation Laboratory. Systematic correlation of synchrotron scattering data with the electrical properties of the films shows that applied biaxial stress results in a marked change in the film's ferroelastic domain populations at room temperature. The large magnitude changes in ferroelectric and dielectric properties of thin film capacitors are consistent with the observed changes in relative volume fractions of the in-plane (a-axis) and out-of-plane (c-axis) oriented tetragonal PZT domains. This fully-reversible effect is symmetric in both tensile and compressive stress states. Our results, obtained from columnar-structure, fiber-textured PZT thin films, will be compared to reported data for ferroelastic domain wall motion in bulk and epitaxial specimens to assess the influence of PZT crystallite size and sample geometry on this phenomenon.
Spatially selective photochemical activity on surfaces of ferroelastics with local polarization
NASA Astrophysics Data System (ADS)
Pisat, Ajay S.; Rohrer, Gregory S.; Salvador, Paul A.
2017-10-01
Spatially selective surface photochemical reactivity provides charge and half-reaction separation on a surface of a single material, which generally leads to improved photocatalytic performance, including for water-splitting. In this article, we review observations wherein spatially selective reactivity has been observed on the surfaces of two types of ferroic materials: non-centrosymmetric ferroelectrics and, more recently, centrosymmetric ferroelastics. We further propose that there is an interesting connection between these materials. Some ferroelectrics can be described as ferroelastics with aligned dipoles: they are ferroelectric ferroelastics. Centrosymmetric ferroelastics known to exhibit domain selective reactivity can be described as ferroelastics with anti-parallel aligned dipoles: they are anti-ferroelectric ferroelastics. We discuss potential mechanisms for spatially selective reactivity in such anti-ferroelectric ferroelastics. Finally, we identify additional anti-ferroelectric ferroelastics of interest for spatially selective reactivity.
Statistics of twinning in strained ferroelastics
NASA Astrophysics Data System (ADS)
Ding, Xiangdong; Aktas, Oktay; Wang, Xiaofei; Li, Suzhi; Zhao, Ziyuan; Zhang, Libo; He, Xiaomei; Lookman, Turab; Saxena, Avadh; Sun, Jun
2017-10-01
In this review, we show that the evolution of the microstructure and kinetics of ferroelastic crystals under external shear can be explored by computer simulations of 2D model materials. We find that the nucleation and propagation of twin boundaries in ferroelastics depend sensitively on temperature. In the plastic regime, the evolution of the ferroelastic microstructure under strain deformation maintains a stick-and-slip mechanism in all temperature regimes, whereas the dynamic behavior changes dramatically from power-law statistics at low temperature to a Kohlrausch law at intermediate temperature, and then to a Vogel-Fulcher law at high temperature. In the yield regime, the distribution of jerk energies follows power-law statistics in all temperature regimes for a large range of strain rates. The non-spanning avalanches in the yield regime follow a parabolic temporal profile. The changes of twin pattern and twin boundaries density represent an important step towards domain boundary engineering.
Strain intermittency due to avalanches in ferroelastic and porous materials.
Soprunyuk, V; Puchberger, S; Tröster, A; Vives, E; Salje, E K H; Schranz, W
2017-06-07
The avalanche statistics in porous materials and ferroelastic domain wall systems has been studied for slowly increasing compressive uniaxial stress with stress rates between 0.2 and 17 kPa s(-1). Velocity peaks [Formula: see text] are calculated from the measured strain drops and used to determine the corresponding Energy distributions [Formula: see text]. Power law distributions [Formula: see text] have been obtained over 4-6 decades. For most of the porous materials and domain wall systems an exponent [Formula: see text] was obtained in good agreement with mean-field theory of the interface pinning transition. For charcoal, shale and calcareous schist we found significant deviations of the exponents from mean-field values in agreement with recent acoustic emission experiments.
Strain intermittency due to avalanches in ferroelastic and porous materials
NASA Astrophysics Data System (ADS)
Soprunyuk, V.; Puchberger, S.; Tröster, A.; Vives, E.; Salje, E. K. H.; Schranz, W.
2017-06-01
The avalanche statistics in porous materials and ferroelastic domain wall systems has been studied for slowly increasing compressive uniaxial stress with stress rates between 0.2 and 17 kPa s-1. Velocity peaks {{v}m}=\\text{d}h/\\text{d}t are calculated from the measured strain drops and used to determine the corresponding Energy distributions N≤ft(E\\equiv vm2\\right) . Power law distributions N≤ft(vm2\\right)\\propto ≤ft(vm2\\right){{}-\\varepsilon} have been obtained over 4-6 decades. For most of the porous materials and domain wall systems an exponent \\varepsilon =1.5+/- 0.1 was obtained in good agreement with mean-field theory of the interface pinning transition. For charcoal, shale and calcareous schist we found significant deviations of the exponents from mean-field values in agreement with recent acoustic emission experiments.
Collective magnetism at multiferroic vortex domain walls.
Geng, Yanan; Lee, N; Choi, Y J; Cheong, S-W; Wu, Weida
2012-12-12
Cross-coupled phenomena of multiferroic domains and domain walls are of fundamental scientific and technological interest. Using cryogenic magnetic force microscopy, we find alternating net magnetic moments at ferroelectric domain walls around vortex cores in multiferroic hexagonal ErMnO(3), which correlate with each other throughout the entire vortex network. This collective nature of domain wall magnetism originates from the uncompensated Er(3+) moments at domain walls and the self-organization of the vortex network. Our results demonstrate that the collective domain wall magnetism can be controlled by external magnetic fields and represent a major advancement in the manipulation of local magnetic moments by harnessing cross-coupled domain walls.
Giant photovoltaic effect of ferroelectric domain walls in perovskite single crystals
Inoue, Ryotaro; Ishikawa, Shotaro; Imura, Ryota; Kitanaka, Yuuki; Oguchi, Takeshi; Noguchi, Yuji; Miyayama, Masaru
2015-01-01
The photovoltaic (PV) effect in polar materials offers great potential for light-energy conversion that generates a voltage beyond the bandgap limit of present semiconductor-based solar cells. Ferroelectrics have received renewed attention because of the ability to deliver a high voltage in the presence of ferroelastic domain walls (DWs). In recent years, there has been considerable debate over the impact of the DWs on the PV effects, owing to lack of information on the bulk PV tensor of host ferroelectrics. In this article, we provide the first direct evidence of an unusually large PV response induced by ferroelastic DWs—termed ‘DW’-PV effect. The precise estimation of the bulk PV tensor in single crystals of barium titanate enables us to quantify the giant PV effect driven by 90° DWs. We show that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region. This work offers a starting point for further investigation into the DW-PV effect of alternative systems and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form. PMID:26443381
Field Evolution of Antiferromagnetic Domains and Domain Walls
NASA Astrophysics Data System (ADS)
Fullerton, Eric E.; Hellwig, Olav; Berger, Andreas K.
2003-03-01
We have used magnetron sputtered [Co(4Å)Pt(7Å)]X Co(4Å)Ru(9Å)N multiplayer films to create artificially layered antiferromagnets. In contrast to atomic antiferromagnets our model system has an antiferromagnetic (AF) exchange energy comparable to the Zeemann energy in moderate fields and allows to fine tune the relative magnitude of the different magnetic energy terms by varying the parameters X and N. With increasing X and N we observe a transition from traditionally observed sharp AF domain walls towards AF domain walls with a finite width which consist of ferromagnetic stripes, i.e. the AF domains have zero net moment whereas the domain walls carry a finite magnetic moment. Such AF domain walls have not been observed before and are a direct consequence of balancing out exchange and Zeeman energy. We also show that such domain walls are expected from theoretical energy calculations. In this contribution we study the nature and field evolution of the AF stripe domain walls by Magnetic Force Microscopy (MFM). The surface sensitivity of MFM and the finite moment of the AF domain walls allow us to image AF domains as well as domain walls. We are showing first experiments to study the AF domain wall evolution in real space while applying an external field. O.H. was supported by the Deutsche Forschungsgemeinschaft via a Forschungsstipendium under the contract number HE 3286/1-1.
Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide
NASA Astrophysics Data System (ADS)
Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.
2014-11-01
Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and
Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.
Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B
2014-11-20
Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and
Asymmetric counter propagation of domain walls
NASA Astrophysics Data System (ADS)
Andrade-Silva, I.; Clerc, M. G.; Odent, V.
2016-07-01
Far from equilibrium systems show different states and domain walls between them. These walls, depending on the type of connected equilibria, exhibit a rich spatiotemporal dynamics. Here, we investigate the asymmetrical counter propagation of domain walls in an in-plane-switching cell filled with a nematic liquid crystal. Experimentally, we characterize the shape and speed of the domain walls. Based on the molecular orientation, we infer that the counter propagative walls have different elastic deformations. These deformations are responsible of the asymmetric counter propagating fronts. Theoretically, based on symmetry arguments, we propose a simple bistable model under the influence of a nonlinear gradient, which qualitatively describes the observed dynamics.
Skyrmions from Instantons inside Domain Walls
NASA Astrophysics Data System (ADS)
Eto, Minoru; Nitta, Muneto; Ohashi, Keisuke; Tong, David
2005-12-01
Some years ago, Atiyah and Manton described a method to construct approximate Skyrmion solutions from Yang-Mills instantons. Here we present a dynamical realization of this construction using domain walls in a five-dimensional gauge theory. The non-Abelian gauge symmetry is broken in each vacuum but restored in the core of the domain wall, allowing instantons to nestle inside the wall. We show that the world volume dynamics of the wall is given by the Skyrme model, including the four-derivative term, and the instantons appear as domain wall Skyrmions.
NASA Astrophysics Data System (ADS)
Skumryev, V.; Laukhin, V.; Fina, I.; Martí, X.; Sánchez, F.; Gospodinov, M.; Fontcuberta, J.
2011-02-01
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO3 is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and antiferromagnetic domain walls. Their distinct dynamics are essential for the observed magnetic switching.
Skumryev, V; Laukhin, V; Fina, I; Martí, X; Sánchez, F; Gospodinov, M; Fontcuberta, J
2011-02-04
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO(3) is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and antiferromagnetic domain walls. Their distinct dynamics are essential for the observed magnetic switching.
Domain walls in antiferromagnetically coupled multilayer films.
Hellwig, Olav; Berger, Andreas; Fullerton, Eric E
2003-11-07
We report experimentally observed magnetic domain-wall structures in antiferromagnetically coupled multilayer films with perpendicular anisotropy. Our studies reveal a first-order phase transition from domain walls with no net moment to domain walls with ferromagnetic cores. The transition originates from the competition between dipolar and exchange energies, which we tune by means of layer thickness. Although observed in a synthetic antiferromagnetic system, such domain-wall structures may be expected to occur in A-type antiferromagnets with anisotropic exchange coupling.
Ferroelastic twin structures in epitaxial WO3 thin films
NASA Astrophysics Data System (ADS)
Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho
2015-12-01
Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.
Automotion of domain walls for spintronic interconnects
Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.
2014-06-07
We simulate “automotion,” the transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate without longitudinal charge current transfer, with only a transient current pulse at domain wall creation and have favorable scaling down to the 20 nm dimension. Cases of both in-plane and out-of-plane magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, attenuation and disappearance, and reflection of domain walls are demonstrated through simulation. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.
Domain walls and defects in ferroelectric materials
NASA Astrophysics Data System (ADS)
Rojac, Tadej; Damjanovic, Dragan
2017-10-01
The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr,Ti)O3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr,Ti)O3 behave differently, what is the role of stationary charged domain walls in enhanced properties of domain engineered BaTiO3 crystals, and give evidence of a large concentration of specific charged point defects within domain walls in BiFeO3 ceramics.
Deterministic control of ferroelastic switching in multiferroic materials.
Balke, N; Choudhury, S; Jesse, S; Huijben, M; Chu, Y H; Baddorf, A P; Chen, L Q; Ramesh, R; Kalinin, S V
2009-12-01
Multiferroic materials showing coupled electric, magnetic and elastic orderings provide a platform to explore complexity and new paradigms for memory and logic devices. Until now, the deterministic control of non-ferroelectric order parameters in multiferroics has been elusive. Here, we demonstrate deterministic ferroelastic switching in rhombohedral BiFeO(3) by domain nucleation with a scanning probe. We are able to select among final states that have the same electrostatic energy, but differ dramatically in elastic or magnetic order, by applying voltage to the probe while it is in lateral motion. We also demonstrate the controlled creation of a ferrotoroidal order parameter. The ability to control local elastic, magnetic and torroidal order parameters with an electric field will make it possible to probe local strain and magnetic ordering, and engineer various magnetoelectric, domain-wall-based and strain-coupled devices.
Low-temperature thermal conductivity of ferroelastic Gd 2(MoO 4) 3
NASA Astrophysics Data System (ADS)
Mielcarek, S.; Mróz, B.; Tylczyński, Z.; Piskunowicz, P.; Trybuła, Z.; Bromberek, M.
2001-05-01
Thermal conductivity, k, of GMO crystal has been measured in temperatures from 0.5 to 80 K. The maximum of k appears at 18 K and its value depends on the current domain state of the sample. The ferroelastic domain walls and antiphase boundaries, characterised by elastic inhomogeneities, are responsible for additional phonon scattering and a decrease in the thermal conductivity. The deviation of the temperature dependence of thermal conductivity from the classical Debye theory observed below 4 K is related to the anomalous behaviour of specific heat in the region of the antiferromagnetic transition at T N=0.3 K .
Chiral spin torque at magnetic domain walls.
Ryu, Kwang-Su; Thomas, Luc; Yang, See-Hun; Parkin, Stuart
2013-07-01
Spin-polarized currents provide a powerful means of manipulating the magnetization of nanodevices, and give rise to spin transfer torques that can drive magnetic domain walls along nanowires. In ultrathin magnetic wires, domain walls are found to move in the opposite direction to that expected from bulk spin transfer torques, and also at much higher speeds. Here we show that this is due to two intertwined phenomena, both derived from spin-orbit interactions. By measuring the influence of magnetic fields on current-driven domain-wall motion in perpendicularly magnetized Co/Ni/Co trilayers, we find an internal effective magnetic field acting on each domain wall, the direction of which alternates between successive domain walls. This chiral effective field arises from a Dzyaloshinskii-Moriya interaction at the Co/Pt interfaces and, in concert with spin Hall currents, drives the domain walls in lock-step along the nanowire. Elucidating the mechanism for the manipulation of domain walls in ultrathin magnetic films will enable the development of new families of spintronic devices.
The formation and evolution of domain walls
NASA Technical Reports Server (NTRS)
Press, William H.; Ryden, Barbara S.; Spergel, David N.
1991-01-01
Domain walls are sheet-like defects produced when the low energy vacuum has isolated degenerate minima. The researchers' computer code follows the evolution of a scalar field, whose dynamics are determined by its Lagrangian density. The topology of the scalar field determines the evolution of the domain walls. This approach treats both wall dynamics and reconnection. The researchers investigated not only potentials that produce single domain walls, but also potentials that produce a network of walls and strings. These networks arise in axion models where the U(1) Peccei-Quinn symmetry is broken into Z sub N discrete symmetries. If N equals 1, the walls are bounded by strings and the network quickly disappears. For N greater than 1, the network of walls and strings behaved qualitatively just as the wall network shown in the figures given here. This both confirms the researchers' pessimistic view that domain walls cannot play an important role in the formation of large scale structure and implies that axion models with multiple minimum can be cosmologically disastrous.
Microwave background distortions from domain walls
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1990-01-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. It was found that the maximal redshift distortion for both spherical and planar walls is of the order pi G sigma H(sup -1)(sub 0), where sigma is the surface energy density and H(sup -1)(sub 0) the Hubble parameter. It was also found that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e., the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor gamma the redshift distortion is enhanced by gamma cubed.
Microwave background distortions from domain walls
NASA Astrophysics Data System (ADS)
Goetz, Guenter; Noetzold, Dirk
1990-08-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. It was found that the maximal redshift distortion for both spherical and planar walls is of the order pi G sigma H(sup -1)(sub 0), where sigma is the surface energy density and H(sup -1)(sub 0) the Hubble parameter. It was also found that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e., the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor gamma the redshift distortion is enhanced by gamma cubed.
Microwave background distortions from domain walls.
NASA Astrophysics Data System (ADS)
Goetz, G.; Nötzold, D.
1991-03-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large-scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. The authors find that the maximal redshift distortion for both spherical and planar walls is of the order πGσH0-1, where σ is the surface energy density and H0 the Hubble parameter. They also find that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e. the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor γ the redshift distortion is enhanced by γ3.
Dynamical depinning of chiral domain walls
NASA Astrophysics Data System (ADS)
Moretti, Simone; Voto, Michele; Martinez, Eduardo
2017-08-01
The domain wall depinning field represents the minimum magnetic field needed to move a domain wall, typically pinned by samples' disorder or patterned constrictions. Conventionally, such a field is considered independent on the Gilbert damping since it is assumed to be the field at which the Zeeman energy equals the pinning energy barrier (both damping independent). Here we analyze numerically the domain wall depinning field as a function of the Gilbert damping in a system with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Contrary to expectations, we find that the depinning field depends on the Gilbert damping and that it strongly decreases for small damping parameters. We explain this dependence with a simple one-dimensional model and we show that the reduction of the depinning field is related to the finite size of the pinning barriers and to the domain wall internal dynamics, connected to the Dzyaloshinskii-Moriya interaction and the shape anisotropy.
Domain wall magneto-Seebeck effect
NASA Astrophysics Data System (ADS)
Krzysteczko, Patryk; Hu, Xiukun; Liebing, Niklas; Sievers, Sibylle; Schumacher, Hans W.
2015-10-01
The interplay between charge, spin, and heat currents in magnetic nanostructures subjected to a temperature gradient has led to a variety of novel effects and promising applications studied in the fast-growing field of spin caloritronics. Here, we explore the magnetothermoelectrical properties of an individual magnetic domain wall in a permalloy nanowire. In thermal gradients of the order of few K /μ m along the long wire axis, we find a clear magneto-Seebeck signature due to the presence of a single domain wall. The observed domain wall magneto-Seebeck effect can be explained by the magnetization-dependent Seebeck coefficient of permalloy in combination with the local spin configuration of the domain wall.
Dielectric dispersion due to weak domain wall pinning in RbH2PO4
NASA Astrophysics Data System (ADS)
Mueller, Volkmar; Shchur, Yaroslav; Beige, Horst; Mattauch, Stefan; Glinnemann, Jürgen; Heger, Gernot
2002-04-01
Dielectric spectroscopy experiments are carried out in the ferroelectric phase of rubidium dihydrogen phosphate (RbH2PO4), within the frequency range 0.1 Hz
Magnetic domain and domain wall in Co/Pt multilayer
NASA Astrophysics Data System (ADS)
Talapatra, A.; Mohanty, J.
2016-05-01
We report systematic micromagnetic investigation of formation of magnetic domains in perpendicularly magnetized Co/Pt multilayer with the variation in magnetic anisotropy and stack thickness. The lowering of anisotropy makes the domain wall broader and domain formation less efficient. Domain sizeincreases with increasing thickness of the stack to minimize the stray field energy.The minimization of energy of the system due to domain formation makes the M-H loop narrower whereas, lower stack thickness results in a wider loop. The magnetization reversalin this system occurs due tothe nucleation and growth of reverse domains.
Structural domain walls in polar hexagonal manganites
NASA Astrophysics Data System (ADS)
Kumagai, Yu
2014-03-01
The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.
Robust ferromagnetism carried by antiferromagnetic domain walls
NASA Astrophysics Data System (ADS)
Hirose, Hishiro T.; Yamaura, Jun-Ichi; Hiroi, Zenji
2017-02-01
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics.
Robust ferromagnetism carried by antiferromagnetic domain walls
Hirose, Hishiro T.; Yamaura, Jun-ichi; Hiroi, Zenji
2017-01-01
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics. PMID:28195565
Stable charged antiparallel domain walls in hyperferroelectrics
NASA Astrophysics Data System (ADS)
Liu, S.; Cohen, R. E.
2017-06-01
Charge-neutral 180° domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180° domain walls running perpendicular to the polarization directions are highly energetically unfavorable because of the depolarization field and are difficult to stabilize. We explore both neutral and charged 180° domain walls in hyperferroelectrics, a class of proper ferroelectrics with persistent polarization in the presence of a depolarization field, using density functional theory. We obtain zero temperature equilibrium structures of head-to-head and tail-to-tail walls in recently discovered ABC-type hexagonal hyperferroelectrics. Charged domain walls can also be stabilized in canonical ferroelectrics represented by LiNbO3 without any dopants, defects or mechanical clamping. First-principles electronic structure calculations show that charged domain walls can reduce and even close the band gap of host materials and support quasi-two-dimensional electron(hole) gas with enhanced electrical conductivity.
Robust ferromagnetism carried by antiferromagnetic domain walls.
Hirose, Hishiro T; Yamaura, Jun-Ichi; Hiroi, Zenji
2017-02-14
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics.
Tunable inertia of chiral magnetic domain walls
NASA Astrophysics Data System (ADS)
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-11-01
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii-Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices.
Tunable inertia of chiral magnetic domain walls.
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-11-24
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii-Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices.
Tunable inertia of chiral magnetic domain walls
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-01-01
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii–Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii–Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices. PMID:27882932
On thick domain walls in general relativity
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1989-01-01
Planar scalar field configurations in general relativity differ considerably from those in flat space. It is shown that static domain walls of finite thickness in curved space-time do not possess a reflection symmetry. At infinity, the space-time tends to the Taub vacuum on one side of the wall and to the Minkowski vacuum (Rindler space-time) on the other. Massive test particles are always accelerated towards the Minkowski side, i.e., domain walls are attractive on the Taub side, but repulsive on the Minkowski side (Taub-vacuum cleaner). It is also proved that the pressure in all directions is always negative. Finally, a brief comment is made concerning the possibility of infinite, i.e., bigger than horizon size, domain walls in our universe. All of the results are independent of the form of the potential V(phi) greater than or equal to 0 of the scalar field phi.
Domain walls as probes of gravity
Dvali, Gia; Gabadadze, Gregory; Pujolas, Oriol; Rahman, Rakibur
2007-06-15
We show that domain walls are probes that enable one to distinguish large-distance modified gravity from general relativity (GR) at short distances. For example, low-tension domain walls are stealth in modified gravity, while they do produce global gravitational effects in GR. We demonstrate this by finding exact solutions for various domain walls in the DGP model. A wall with tension lower than the fundamental Planck scale does not inflate and has no gravitational effects on a 4D observer, since its 4D tension is completely screened by gravity itself. We argue that this feature remains valid in a generic class of models of infrared modified gravity. As a byproduct, we obtain exact solutions for supermassive codimension-2 branes.
The interaction of transverse domain walls.
Krüger, Benjamin
2012-01-18
The interaction between transverse domain walls is calculated analytically using a multipole expansion up to third order. Starting from an analytical expression for the magnetization in the wall, the monopole, dipole, and quadrupole moments are derived and their impact on the interaction is investigated using the surface and volume charges. The surface charges are important for the dipole moment while the volume charges constitute the monopole and quadrupole moments. For domain walls that are situated in different wires it is found that there is a strong deviation from the interaction of two monopoles. This deviation is caused by the interaction of the monopole of the wall in the first wire with the dipole of the wall in the second wire and vice versa. The dipole-dipole and the quadrupole-monopole interactions are found to be also of considerable size and non-negligible. A comparison with micromagnetic simulations shows a good agreement.
Dispersive Stiffness of Dzyaloshinskii Domain Walls
NASA Astrophysics Data System (ADS)
Pellegren, J. P.; Lau, D.; Sokalski, V.
2017-07-01
It is well documented that subjecting perpendicular magnetic films that exhibit the interfacial Dzyaloshinskii-Moriya interaction to an in-plane magnetic field results in a domain wall (DW) energy σ , which is highly anisotropic with respect to the orientation of the DW in the film plane Θ . We demonstrate that this anisotropy has a profound impact on the elastic response of the DW as characterized by the surface stiffness σ ˜ (Θ )=σ (Θ )+σ''(Θ ) and evaluate its dependence on the length scale of deformation. The influence of stiffness on DW mobility in the creep regime is assessed, with analytic and numerical calculations showing trends in σ ˜ that better represent experimental measurements of domain wall velocity in magnetic thin films compared to σ alone. Our treatment provides experimental support for theoretical models of the mobility of anisotropic elastic manifolds and makes progress toward a more complete understanding of magnetic domain wall creep.
Anomalous feedback and negative domain wall resistance
NASA Astrophysics Data System (ADS)
Cheng, Ran; Zhu, Jian-Gang; Xiao, Di
2016-11-01
Magnetic induction can be regarded as a negative feedback effect, where the motive-force opposes the change of magnetic flux that generates the motive-force. In artificial electromagnetics emerging from spintronics, however, this is not necessarily the case. By studying the current-induced domain wall dynamics in a cylindrical nanowire, we show that the spin motive-force exerting on electrons can either oppose or support the applied current that drives the domain wall. The switching into the anomalous feedback regime occurs when the strength of the dissipative torque β is about twice the value of the Gilbert damping constant α. The anomalous feedback manifests as a negative domain wall resistance, which has an analogy with the water turbine.
Standing gravitational waves from domain walls
Gogberashvili, Merab; Myrzakul, Shynaray; Singleton, Douglas
2009-07-15
We construct a plane symmetric, standing gravitational wave for a domain wall plus a massless scalar field. The scalar field can be associated with a fluid which has the properties of 'stiff' matter, i.e., matter in which the speed of sound equals the speed of light. Although domain walls are observationally ruled out in the present era, the solution has interesting features which might shed light on the character of exact nonlinear wave solutions to Einstein's equations. Additionally this solution may act as a template for higher dimensional 'brane-world' model standing waves.
Models for Gapped Boundaries and Domain Walls
NASA Astrophysics Data System (ADS)
Kitaev, Alexei; Kong, Liang
2012-07-01
We define a class of lattice models for two-dimensional topological phases with boundary such that both the bulk and the boundary excitations are gapped. The bulk part is constructed using a unitary tensor category {C} as in the Levin-Wen model, whereas the boundary is associated with a module category over {C} . We also consider domain walls (or defect lines) between different bulk phases. A domain wall is transparent to bulk excitations if the corresponding unitary tensor categories are Morita equivalent. Defects of higher codimension will also be studied. In summary, we give a dictionary between physical ingredients of lattice models and tensor-categorical notions.
Domain wall orientation in magnetic nanowires.
Vedmedenko, E Y; Kubetzka, A; von Bergmann, K; Pietzsch, O; Bode, M; Kirschner, J; Oepen, H P; Wiesendanger, R
2004-02-20
Scanning tunneling microscopy reveals that domain walls in ultrathin Fe nanowires are oriented along a certain crystallographic direction, regardless of the orientation of the wires. Monte Carlo simulations on a discrete lattice are in accordance with the experiment if the film relaxation is taken into account. We demonstrate that the wall orientation is determined by the atomic lattice and the resulting strength of an effective exchange interaction. The magnetic anisotropy and the magnetostatic energy play a minor role for the wall orientation in that system.
Adaptive ferroelectric states in systems with low domain wall energy: Tetragonal microdomains
NASA Astrophysics Data System (ADS)
Jin, Y. M.; Wang, Y. U.; Khachaturyan, A. G.; Li, J. F.; Viehland, D.
2003-09-01
Ferroelectric and ferroelastic phases with very low domain wall energies have been shown to form miniaturized microdomain structures. A theory of an adaptive ferroelectric phase has been developed to predict the microdomain-averaged crystal lattice parameters of this structurally inhomogeneous state. The theory is an extension of conventional martensite theory, applied to ferroelectric systems with very low domain wall energies. The case of ferroelectric microdomains of tetragonal symmetry is considered. It is shown for such a case that a nanoscale coherent mixture of microdomains can be interpreted as an adaptive ferroelectric phase, whose microdomain-averaged crystal lattice is monoclinic. The crystal lattice parameters of this monoclinic phase are self-adjusting parameters, which minimize the transformation stress. Self-adjustment is achieved by application of the invariant plane strain to the parent cubic lattice, and the value of the self-adjusted parameters is a linear superposition of the lattice constants of the parent and product phases. Experimental investigations of Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystals confirm many of the predictions of this theory.
The dynamics of domain walls and strings
NASA Technical Reports Server (NTRS)
Gregory, Ruth; Haws, David; Garfinkle, David
1989-01-01
The leading order finite-width corrections to the equation of motion describing the motion of a domain wall are derived. The regime in which this equation of motion is invalid is discussed. Spherically and cylindrically symmetric solutions to this equation of motion are found. A misconception that has arisen in recent years regarding the rigidity (or otherwise) of cosmic strings is also clarified.
Tunable resistivity of individual magnetic domain walls.
Franken, J H; Hoeijmakers, M; Swagten, H J M; Koopmans, B
2012-01-20
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width Δ, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real time. A 1/Δ(2) dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.
Separated matter and antimatter domains with vanishing domain walls
Dolgov, A.D.; Godunov, S.I.; Rudenko, A.S.; Tkachev, I.I. E-mail: sgodunov@itep.ru E-mail: tkachev@ms2.inr.ac.ru
2015-10-01
We present a model of spontaneous (or dynamical) C and CP violation where it is possible to generate domains of matter and antimatter separated by cosmologically large distances. Such C(CP) violation existed only in the early universe and later it disappeared with the only trace of generated baryonic and/or antibaryonic domains. So the problem of domain walls in this model does not exist. These features are achieved through a postulated form of interaction between inflaton and a new scalar field, realizing short time C(CP) violation.
Scaling properties of multitension domain wall networks
NASA Astrophysics Data System (ADS)
Oliveira, M. F.; Martins, C. J. A. P.
2015-02-01
We study the asymptotic scaling properties of domain wall networks with three different tensions in various cosmological epochs. We discuss the conditions under which a scale-invariant evolution of the network (which is well established for simpler walls) still applies and also consider the limiting case where defects are locally planar and the curvature is concentrated in the junctions. We present detailed quantitative predictions for scaling densities in various contexts, which should be testable by means of future high-resolution numerical simulations.
Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques.
Shiino, Takayuki; Oh, Se-Hyeok; Haney, Paul M; Lee, Seo-Won; Go, Gyungchoon; Park, Byong-Guk; Lee, Kyung-Jin
2016-08-19
We theoretically investigate the dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet-heavy-metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin waves in the terahertz frequency range. The interplay between spin-orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals from antiferromagnets.
Antiferromagnetic domain wall motion driven by spin-orbit torques
Shiino, Takayuki; Oh, Se-Hyeok; Haney, Paul M.; Lee, Seo-Won; Go, Gyungchoon; Park, Byong-Guk; Lee, Kyung-Jin
2016-01-01
We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves in the terahertz frequency range. The interplay between spin-orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals from antiferromagnets. PMID:27588878
Skyrmion domain wall collision and domain wall-gated skyrmion logic
NASA Astrophysics Data System (ADS)
Xing, Xiangjun; Pong, Philip W. T.; Zhou, Yan
2016-08-01
Skyrmions and domain walls are significant spin textures of great technological relevance to magnetic memory and logic applications, where they can be used as carriers of information. The unique topology of skyrmions makes them display emergent dynamical properties as compared with domain walls. Some studies have demonstrated that the two topologically inequivalent magnetic objects could be interconverted by using cleverly designed geometric structures. Here, we numerically address the skyrmion domain wall collision in a magnetic racetrack by introducing relative motion between the two objects based on a specially designed junction. An electric current serves as the driving force that moves a skyrmion toward a trapped domain wall pair. We see different types of collision dynamics depending on the driving parameters. Most importantly, the modulation of skyrmion transport using domain walls is realized in this system, allowing a set of domain wall-gated logical NOT, NAND, and NOR gates to be constructed. This work provides a skyrmion-based spin-logic architecture that is fully compatible with racetrack memories.
Domain wall motion by localized temperature gradients
NASA Astrophysics Data System (ADS)
Moretti, Simone; Raposo, Victor; Martinez, Eduardo; Lopez-Diaz, Luis
2017-02-01
Magnetic domain wall (DW) motion induced by a localized Gaussian temperature profile is studied in a Permalloy nanostrip within the framework of the stochastic Landau-Lifshitz-Bloch equation. The different contributions to thermally induced DW motion, entropic torque and magnonic spin transfer torque, are isolated and compared. The analysis of magnonic spin transfer torque includes a description of thermally excited magnons in the sample. A third driving force due to a thermally induced dipolar field is found and described. Finally, thermally induced DW motion is studied under realistic conditions by taking into account the edge roughness. The results give quantitative insights into the different mechanisms responsible for domain wall motion in temperature gradients and allow for comparison with experimental results.
Novel domain wall dynamics in synthetic antiferromagnets
NASA Astrophysics Data System (ADS)
Yang, See-Hun; Parkin, Stuart
2017-08-01
In this article, we review fascinating new mechanisms on recently observed remarkable current driven domain wall motion in nanowires formed from perpendicularly magnetized synthetic antiferromagnets interfaced with heavy metallic layers, sources of spin-orbit torques. All the associated torques such as volumetric adiabatic and non-adiabatic spin-transfer-torque, spin-orbit torques, shape anisotropy field torques, Dzyaloshinkii-Moriya interaction torques and most importantly a new powerful torque, exchange coupling torque, will be discussed based on an analytical model that provides an intuitive description of domain wall dynamics in synthetic ferromagnets as well as synthetic antiferromagnets. In addition, the current driven DW motion in the presence of in-plane fields will be investigated, thus deepening our knowledge about the role of the exchange coupling torque, which will be of potential use for application to various novel spintronic devices.
Domain wall motion in ferroelectrics: Barkhausen noise
NASA Astrophysics Data System (ADS)
Shur, V.; Rumyantsev, E.; Kozhevnikov, V.; Nikolaeva, E.; Shishkin, E.
2002-03-01
The switching current noise has been recorded during polarization reversal in single-crystalline gadolinium molybdate (GMO) and lithium tantalate (LT). Analysis of Barkhausen noise (BN) data allows to classify the noise types by determination of the critical indexes and fractal dimensions. BN is manifested as the short pulses during the polarization reversal. We have analyzed the BN data recorded in GMO and LT with various types of controlled domain structure. The data treatment in terms of probability distribution of duration, area and energy of individual pulses reveals the critical behavior typical for the fractal records in time. We used the Fourier transform and Hurst's rescaled range analysis for obtaining the Hurst factor, fractal dimension and classifying the noise types. We investigated by computer simulation the mechanism of sideways motion of 180O domain wall by nucleation at the wall taking into account the nuclei-nuclei interaction. It was shown that the moving domain walls display the fractal shape and their motion is accompanied by Flicker noise, which is in accord with experimental data. The research was made possible in part by Programs "Basic Research in Russian Universities" and "Priority Research in High School. Electronics", by Grant No. 01-02-17443 of RFBR, by Award No.REC-005 of CRDF.
Domain walls in ω-phase transformations
NASA Astrophysics Data System (ADS)
Sanati, Mahdi; Saxena, Avadh
1998-11-01
The β-phase (body-centered cubic: b.c.c.) to ω-phase transformation in certain elements (e.g. Zr) and alloys (e.g. ZrNb) is induced either by quenching or application of pressure. The ω-phase is a metastable state and usually coexists with the β-matrix in the form of small particles. To study the formation of domain walls in these materials we have extended the Landau model of Cook for the ω-phase transition by including a spatial gradient (Ginzburg) term of the scalar order parameter. In general, the Landau free energy is an asymmetric double-well potential. From the variational derivative of the total free energy we obtain a static equilibrium condition. By solving this equation for different physical parameters and boundary conditions, we obtained different quasi-one-dimensional soliton-like solutions. These solutions correspond to three different types of domain walls between the ω-phase and the β-matrix. In addition, we obtained soliton lattice (domain wall array) solutions, calculated their formation energy and the asymptotic interaction between the solitons.
Quantum properties of charged ferroelectric domain walls
NASA Astrophysics Data System (ADS)
Sturman, B.; Podivilov, E.; Stepanov, M.; Tagantsev, A.; Setter, N.
2015-12-01
We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this potential, dependencies on the ferroelectric characteristics, as well as the spatial structure and formation energy of the wall. Our description is based on the Hartree and Thomas-Fermi methods and Landau theory for the ferroelectric transitions. Changeover from a few to many quantum levels (with the electron binding energies ˜1 eV) is controlled by a single characteristic parameter. The quantum models well describe the core of the wall, whose width is typically ˜10 nm. Additionally, the walls possess pronounced long-range tails which are due to trap recharging. For the trap concentration Nt=(1017-1018) cm-3 , the tail length ℓ is of the μ m scale. On the distances much larger than ℓ the walls are electrically uncoupled from each other and the crystal faces.
Correlation between spin structure oscillations and domain wall velocities.
Bisig, André; Stärk, Martin; Mawass, Mohamad-Assaad; Moutafis, Christoforos; Rhensius, Jan; Heidler, Jakoba; Büttner, Felix; Noske, Matthias; Weigand, Markus; Eisebitt, Stefan; Tyliszczak, Tolek; Van Waeyenberge, Bartel; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2013-01-01
Magnetic sensing and logic devices based on the motion of magnetic domain walls rely on the precise and deterministic control of the position and the velocity of individual magnetic domain walls in curved nanowires. Varying domain wall velocities have been predicted to result from intrinsic effects such as oscillating domain wall spin structure transformations and extrinsic pinning due to imperfections. Here we use direct dynamic imaging of the nanoscale spin structure that allows us for the first time to directly check these predictions. We find a new regime of oscillating domain wall motion even below the Walker breakdown correlated with periodic spin structure changes. We show that the extrinsic pinning from imperfections in the nanowire only affects slow domain walls and we identify the magnetostatic energy, which scales with the domain wall velocity, as the energy reservoir for the domain wall to overcome the local pinning potential landscape.
Correlation between spin structure oscillations and domain wall velocities
Bisig, André; Stärk, Martin; Mawass, Mohamad-Assaad; Moutafis, Christoforos; Rhensius, Jan; Heidler, Jakoba; Büttner, Felix; Noske, Matthias; Weigand, Markus; Eisebitt, Stefan; Tyliszczak, Tolek; Van Waeyenberge, Bartel; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2013-01-01
Magnetic sensing and logic devices based on the motion of magnetic domain walls rely on the precise and deterministic control of the position and the velocity of individual magnetic domain walls in curved nanowires. Varying domain wall velocities have been predicted to result from intrinsic effects such as oscillating domain wall spin structure transformations and extrinsic pinning due to imperfections. Here we use direct dynamic imaging of the nanoscale spin structure that allows us for the first time to directly check these predictions. We find a new regime of oscillating domain wall motion even below the Walker breakdown correlated with periodic spin structure changes. We show that the extrinsic pinning from imperfections in the nanowire only affects slow domain walls and we identify the magnetostatic energy, which scales with the domain wall velocity, as the energy reservoir for the domain wall to overcome the local pinning potential landscape. PMID:23978905
NASA Astrophysics Data System (ADS)
Jones, Jacob L.; Hoffman, Mark; Daniels, John E.; Studer, Andrew J.
2006-11-01
Ferroelastic domain switching during dynamic actuation is measured in situ for a piezoelectric lead zirconate titanate (PZT) ceramic utilizing a new capability developed on The Australian Strain Scanner (TASS) at ANSTO. Diffraction patterns are obtained as a function of time during a 1 Hz cycle. The change in the 0 0 2 and 2 0 0 diffraction intensities indicates there is ferroelastic domain switching at sub-coercive (weak) fields.
PREFACE: Domain wall dynamics in nanostructures Domain wall dynamics in nanostructures
NASA Astrophysics Data System (ADS)
Marrows, C. H.; Meier, G.
2012-01-01
Domain structures in magnetic materials are ubiquitous and have been studied for decades. The walls that separate them are topological defects in the magnetic order parameter and have a wide variety of complex forms. In general, their investigation is difficult in bulk materials since only the domain structure on the surface of a specimen is visible. Cutting the sample to reveal the interior causes a rearrangement of the domains into a new form. As with many other areas of magnetism, the study of domain wall physics has been revitalised by the advent of nanotechnology. The ability to fabricate nanoscale structures has permitted the formation of simplified and controlled domain patterns; the development of advanced microscopy methods has permitted them to be imaged and then modelled; subjecting them to ultrashort field and current pulses has permitted their dynamics to be explored. The latest results from all of these advances are described in this special issue. Not only has this led to results of great scientific beauty, but also to concepts of great applicability to future information technologies. In this issue the reader will find the latest results for these domain wall dynamics and the high-speed processes of topological structures such as domain walls and magnetic vortices. These dynamics can be driven by the application of magnetic fields, or by flowing currents through spintronic devices using the novel physics of spin-transfer torque. This complexity has been studied using a wide variety of experimental techniques at the edge of the spatial and temporal resolution currently available, and can be described using sophisticated analytical theory and computational modelling. As a result, the dynamics can be engineered to give rise to finely controlled memory and logic devices with new functionality. Moreover, the field is moving to study not only the conventional transition metal ferromagnets, but also complex heterostructures, novel magnets and even other
Indirect control of antiferromagnetic domain walls with spin current.
Wieser, R; Vedmedenko, E Y; Wiesendanger, R
2011-02-11
The indirect controlled displacement of an antiferromagnetic domain wall by a spin current is studied by Landau-Lifshitz-Gilbert spin dynamics. The antiferromagnetic domain wall can be shifted both by a spin-polarized tunnel current of a scanning tunneling microscope or by a current driven ferromagnetic domain wall in an exchange coupled antiferromagnetic-ferromagnetic layer system. The indirect control of antiferromagnetic domain walls opens up a new and promising direction for future spin device applications based on antiferromagnetic materials.
Black holes escaping from domain walls
Flachi, Antonino; Sasaki, Misao; Pujolas, Oriol; Tanaka, Takahiro
2006-06-15
Previous studies concerning the interaction of branes and black holes suggested that a small black hole intersecting a brane may escape via a mechanism of reconnection. Here we consider this problem by studying the interaction of a small black hole and a domain wall composed of a scalar field and simulate the evolution of this system when the black hole acquires an initial recoil velocity. We test and confirm previous results, however, unlike the cases previously studied, in the more general set-up considered here, we are able to follow the evolution of the system also during the separation, and completely illustrate how the escape of the black hole takes place.
Ferroelastic twin structures in epitaxial WO{sub 3} thin films
Yun, Shinhee; Woo, Chang-Su; Lee, Jin Hong; Chu, Kanghyun; Kim, Gi-Yeop; Choi, Si-Young; Sharma, Pankaj; Seidel, Jan; Song, Jong Hyun; Chung, Sung-Yoon; Yang, Chan-Ho
2015-12-21
Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.
Polarization control at spin-driven ferroelectric domain walls.
Leo, Naëmi; Bergman, Anders; Cano, Andres; Poudel, Narayan; Lorenz, Bernd; Fiebig, Manfred; Meier, Dennis
2015-04-14
Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.
Origin of stationary domain wall enhanced ferroelectric susceptibility
NASA Astrophysics Data System (ADS)
Liu, Shi; Cohen, R. E.
2017-03-01
Ferroelectrics usually adopt a multidomain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric materials. The enhancement of low-field susceptibility/permittivity under subswitching conditions is usually attributed to reversible domain wall vibration. Recent experiments highlight the stationary domain wall contribution to the dielectric susceptibility irrespective of any lateral displacements or deformations of the wall. We study the effects of domain walls on the low-field permittivity of PbTiO3 with density functional theory and molecular dynamics simulations. The static dielectric constant is calculated as a function of increasing domain wall density and temperature. We find an increase of dielectric permittivity with increasing domain wall density, which is expected to occur at a low driving field where the lateral motion of domain walls is forbidden. Real-space decomposition of the dielectric response reveals that frustrated dipoles within the finite width of the domain walls are responsible for the enhanced low-field permittivity. We explain the 100 % enhancement of the dielectric susceptibility form domain walls, which arises from the softer potential wells within them.
Magnetization reversal in ferromagnetic spirals via domain wall motion
NASA Astrophysics Data System (ADS)
Schumm, Ryan D.; Kunz, Andrew
2016-11-01
Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.
Field tuning of ferromagnetic domain walls on elastically coupled ferroelectric domain boundaries
NASA Astrophysics Data System (ADS)
Franke, Kévin J. A.; Lahtinen, Tuomas H. E.; van Dijken, Sebastiaan
2012-03-01
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90∘ ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switching between both wall types reverses the wall chirality and abruptly changes the width of the ferromagnetic domain walls by up to 1000%.
Tunable conductance of magnetic nanowires with structured domain walls.
Dugaev, V K; Berakdar, J; Barnaś, J
2006-02-03
We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure increases strongly when these size-quantized states are tuned on resonance with the Fermi energy, e.g., upon varying the distance between the domain walls which results in resonance-type peaks of the wire conductance. This novel phenomenon is shown to be utilizable to manipulate the spin density in the domain vicinity. The domain wall parameters are readily controllable, and the predicted effect is hence exploitable in spintronic devices.
NASA Astrophysics Data System (ADS)
Borie, B.; Kehlberger, A.; Wahrhusen, J.; Grimm, H.; Kläui, M.
2017-08-01
We study the key domain-wall properties in segmented nanowire loop-based structures used in domain-wall-based sensors. The two reasons for device failure, namely, distribution of the domain-wall propagation field (depinning) and the nucleation field are determined with magneto-optical Kerr effect and giant-magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni81 Fe19 , a complete GMR stack with Co90 Fe10 /Ni81Fe19 as a free layer, and a single layer of Co90 Fe10 are deposited and industrially patterned to determine the influence of the shape anisotropy, the magnetocrystalline anisotropy, and the fabrication processes. We show that the propagation field is influenced only slightly by the geometry but significantly by material parameters. Simulations for a realistic wire shape yield a curling-mode type of magnetization configuration close to the nucleation field. Nonetheless, we find that the domain-wall nucleation fields can be described by a typical Stoner-Wohlfarth model related to the measured geometrical parameters of the wires and fitted by considering the process parameters. The GMR effect is subsequently measured in a substantial number of devices (3000) in order to accurately gauge the variation between devices. This measurement scheme reveals a corrected upper limit to the nucleation fields of the sensors that can be exploited for fast characterization of the working elements.
Propulsion of a domain wall in an antiferromagnet by magnons
NASA Astrophysics Data System (ADS)
Kim, Se Kwon; Tserkovnyak, Yaroslav; Tchernyshyov, Oleg
2014-09-01
We analyze the dynamics of a domain wall in an easy-axis antiferromagnet driven by circularly polarized magnons. Magnons pass through a stationary domain wall without reflection and thus exert no force on it. However, they reverse their spin upon transmission, thereby transferring two quanta of angular momentum to the domain wall and causing it to precess. A precessing domain wall partially reflects magnons back to the source. The reflection of spin waves creates a previously identified reactive force. We point out a second mechanism of propulsion, which we term redshift: magnons passing through a precessing domain wall lower their frequency by twice the angular velocity of the domain wall; the concomitant reduction of the magnons' linear momentum indicates momentum transfer to the domain wall. We solve the equations of motion for spin waves in the background of a uniformly precessing domain wall with the aid of supersymmetric quantum mechanics and compute the net force and torque applied by magnons to the domain wall. Redshift is the dominant mechanism of propulsion at low spin-wave intensities; reflection dominates at higher intensities. We derive a set of coupled algebraic equations to determine the linear velocity and angular frequency of the domain wall in a steady state. The theory agrees well with numerical micromagnetic simulations.
Domain wall conductivity in KTiOPO4 crystals
NASA Astrophysics Data System (ADS)
Lindgren, G.; Canalias, C.
2017-07-01
We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements reveal memristive-like behavior associated with topographic changes and permanent charge displacement. This behavior is observed for all the voltage sweep-rates at the domain walls, while it only occurs for low frequencies at the domains. We attribute these findings to the redistribution of ions due to the applied bias and their effect on the tip-sample barrier.
Domain wall motion and precursor dynamics in PbZrO3
NASA Astrophysics Data System (ADS)
Puchberger, S.; Soprunyuk, V.; Majchrowski, A.; Roleder, K.; Schranz, W.
2016-12-01
Single crystals of PbZrO3 have been studied by dynamic mechanical analysis measurements in the low-frequency range f =0.02 -50 Hz. The complex Young's modulus exhibits a quite rich behavior and depends strongly on the direction of the applied dynamic force. In pseudocubic [100] c direction, we found intrinsic elastic behavior as expected from the Landau theory; at the antiferroelectric transition Tc≈510 K, a downwards cusp anomaly in Y' accompanied by a peak in Y'' points to a quadratic/linear order parameter/strain coupling in the Landau free energy. Both anomalies are increasing with decreasing frequency showing that the measurements are performed in the limit ω τth>1 . Frequency scans around Tc show energy dissipation, which could result from interphase boundary motion and/or heat diffusion. Above Tc, we observe a pronounced precursor softening, quite similar as it was found in other perovskites, which can be perfectly fitted including isotropic order parameter fluctuations. The low-frequency elastic response in [110] c direction is different. Below Tc, we find in addition to the intrinsic anomaly a strong contribution from ferroelastic domains, which leads to an additional softening in Y'. With decreasing temperatures this superelastic softening gradually disappears, due to an increasing relaxation time τDW for domain wall motion, indicating glassy behavior of domain freezing in PbZrO3. In contrast to the [100] c direction, for forces along [110] c, we found a pronounced precursor hardening, starting at about 60 K above Tc. Since this anomaly is of dynamic nature, starting at the same temperature as the observed birefringence and piezoelectric anomalies [Ko et al. Phys. Rev. B 87, 184110 (2013), 10.1103/PhysRevB.87.184110], we conclude that it originates from slow dynamic polar clusters, which freeze at T*≈550 K>Tc .
Domain Wall Architecture in Tetragonal Ferroelectric Thin Films.
De Luca, Gabriele; Rossell, Marta D; Schaab, Jakob; Viart, Nathalie; Fiebig, Manfred; Trassin, Morgan
2017-02-01
Non-Ising-like 180° ferroelectric domain wall architecture and domain distribution in tetragonal PbZrx Ti1-x O3 thin films are probed using a combination of optical second harmonic generation and scanning transmission electron microscopy. In the remnant state, a specific nonlinear optical signature of tilted 180° domain walls corresponding to a mixed Ising-Néel-type rotation of polarization across the wall is shown.
Domain wall orientation and domain shape in KTiOPO4 crystals
NASA Astrophysics Data System (ADS)
Shur, V. Ya.; Vaskina, E. M.; Pelegova, E. V.; Chuvakova, M. A.; Akhmatkhanov, A. R.; Kizko, O. V.; Ivanov, M.; Kholkin, A. L.
2016-09-01
Domain shape evolution and domain wall motion have been studied in KTiOPO4 (KTP) ferroelectric single crystals using complementary experimental methods. The in situ visualization of domain kinetics has allowed revealing: (1) qualitative change of the domain shape, (2) dependence of the domain wall velocity on its orientation, (3) jump-like domain wall motion caused by domain merging, (4) effect of domain shape stability. The model of domain wall motion driven by generation of elementary steps (kink-pair nucleation) and subsequent kink motion is presented. The decrease in the relative velocity of the approaching parallel domain walls is attributed to electrostatic interaction. The effect of polarization reversal induced by chemical etching is observed. The obtained results are important for the development of domain engineering in the crystals of KTP family.
Anisotropies of the cosmic background radiation by domain wall networks
Nambu, Yasusada; Ishihara, Hideki; Gouda, Naoteru; Sugiyama, Naoshi )
1991-06-01
This paper discusses cosmological effects by domain wall formation associated with a late time phase transition after decoupling. Assuming the existence of rigid domain wall networks, a simple one-dimensional model is constructed and the quadrupole anisotropy of the cosmic background radiation (CBR) is calculated. Contrary to expectation, the gravitational potential of a domain wall itself does not disturb the isotropy of CBR. Estimating the quadrupole anisotropy of CBR induced by the wall-driven growth of matter density perturbations, a 100/h Mpc periodic wall structure is found to be consistent with the observed upper bound. 12 refs.
Effective pinning energy landscape perturbations for propagating magnetic domain walls
Burn, D. M.; Atkinson, D.
2016-01-01
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated. PMID:27694953
Dynamic dependence to domain wall propagation through artificial spin ice
NASA Astrophysics Data System (ADS)
Burn, D. M.; Chadha, M.; Branford, W. R.
2017-03-01
Domain wall propagation dynamics has been studied in nanostructured artificial kagome spin-ice structures. A stripline circuit has been used to provide localized pulsed magnetic fields within the artificial spin-ice (ASI) structure. This provides control of the system through electrically assisted domain wall nucleation events. Synchronization of the pulsed fields with additional global magnetic fields and the use of a focused magneto-optical Kerr effect magnetometer allows our experiments to probe the domain wall transit through an extended ASI structure. We find that the propagation distance depends on the driving field revealing field-driven properties of domain walls below their intrinsic nucleation field.
Power optimization for domain wall motion in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Tretiakov, O. A.; Liu, Y.; Abanov, Ar.
2011-04-01
The current mediated domain-wall dynamics in a thin ferromagnetic wire is investigated. We derive the effective equations of motion of the domain wall. They are used to study the possibility to optimize the power supplied by electric current for the motion of domain walls in a nanowire. We show that a certain resonant time-dependent current moving a domain wall can significantly reduce the Joule heating in the wire, and thus it can lead to a novel proposal for the most energy efficient memory devices. We discuss how Gilbert damping, nonadiabatic spin transfer torque, and the presence of Dzyaloshinskii-Moriya interaction can effect this power optimization.
Effective pinning energy landscape perturbations for propagating magnetic domain walls
NASA Astrophysics Data System (ADS)
Burn, D. M.; Atkinson, D.
2016-10-01
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated.
Hamilton-Jacobi method for curved domain walls and cosmologies
NASA Astrophysics Data System (ADS)
Skenderis, Kostas; Townsend, Paul K.
2006-12-01
We use Hamiltonian methods to study curved domain walls and cosmologies. This leads naturally to first-order equations for all domain walls and cosmologies foliated by slices of maximal symmetry. For Minkowski and AdS-sliced domain walls (flat and closed FLRW cosmologies) we recover a recent result concerning their (pseudo)supersymmetry. We show how domain-wall stability is consistent with the instability of AdS vacua that violate the Breitenlohner-Freedman bound. We also explore the relationship to Hamilton-Jacobi theory and compute the wave-function of a 3-dimensional closed universe evolving towards de Sitter spacetime.
Thermal spin-transfer torques on magnetic domain walls
NASA Astrophysics Data System (ADS)
Yuan, Zhe; Wang, Shuai; Xia, Ke
2010-04-01
We studied the spin-transfer torques acting on magnetic domain walls in the presence of a nonequilibrium thermal distribution using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. First-principles transport calculations have been performed in Ni and Co domain walls as typical examples. The temperature difference between two sides of the domain wall can induce remarkable spin- transfer torques, which are comparable with the current-induced torques required for the domain wall motion.
Effective pinning energy landscape perturbations for propagating magnetic domain walls.
Burn, D M; Atkinson, D
2016-10-03
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping 'quasi-static' and low damping 'dynamic' regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated.
Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; Scrymgeour, David A.; Maria, Jon-Paul; Paisley, Elizabeth A.; Kitahara, Andrew R.
2016-09-16
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yield can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.
Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; ...
2016-09-16
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yieldmore » can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.« less
Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; Scrymgeour, David A.; Maria, Jon-Paul; Paisley, Elizabeth A.; Kitahara, Andrew R.
2016-09-16
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yield can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.
Magnetic vortices as localized mesoscopic domain wall pinning sites
NASA Astrophysics Data System (ADS)
Novak, R. L.; Sampaio, L. C.
2017-07-01
We report on the controllable pinning of domain walls in a stripe with perpendicular magnetic anisotropy by magnetostatic coupling to a magnetic vortex in disks located above the stripe. Pinning mechanisms and depinning fields, studied by means of micromagnetic simulations, are reported. An asymmetric magnetization reversal process is observed and explained in terms of two main contributions to the domain wall pinning: coupling between the in-plane and out-of-plane components of its stray field and the vortex. The in-plane coupling is symmetric with respect to the wall sense of motion while the out-of-plane coupling leads to the observed asymmetry in the hysteresis loops. The energy landscape of the domain wall derived from the micromagnetic simulations supports these findings. This novel pinning strategy, which can be realized by current nanofabrication techniques, opens up new possibilities for the non-destructive control of domain wall mobility in domain wall based spintronic devices.
Cao, Ye; Chen, Long-Qing; Kalinin, Sergei V.
2017-05-16
Ferroelectric and ferroelastic domain walls play important roles in ferroelectric properties. However, their couplings with flexoelectricity have been less understood. Here, we applied phase-field simulation to investigate the flexoelectric coupling with ferroelectric a/c twin structures in lead ziconate titanate thin films. Local stress gradients were found to exist near twin walls that created both lateral and vertical electric fields through the flexoelectric effect, resulting in polarization inclinations from either horizontal or normal orientation, polarization rotation angles deviated from 90°, and consequently highly asymmetric a/c twin walls. Furthermore, by tuning the flexoelectric strengths in a reasonable range from first-principles calculations, wemore » found that the transverse flexoelectric coefficient has a larger influence on the polarization rotation than longitudinal and shear coefficients. And as polar rotations that commonly occur at compositional morphotropic phase boundaries contribute to the piezoelectric enhancement, this work calls for further exploration of alternative strain-engineered polar rotations via flexoelectricity in ferroelectric thin films.« less
Magnetic bubblecade memory based on chiral domain walls.
Moon, Kyoung-Woong; Kim, Duck-Ho; Yoo, Sang-Cheol; Je, Soong-Geun; Chun, Byong Sun; Kim, Wondong; Min, Byoung-Chul; Hwang, Chanyong; Choe, Sug-Bong
2015-03-16
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by employing domain-wall tension induced by sophisticated structural modulation. Herein, we demonstrate a new scheme without any current injection or structural modulation. This scheme utilizes the recently discovered chiral domain walls, which exhibit asymmetry in their speed with respect to magnetic fields. Because of this asymmetry, an alternating magnetic field results in the coherent motion of the domain walls in one direction. Such coherent unidirectional motion is achieved even for an array of magnetic bubble domains, enabling the design of a new device prototype-magnetic bubblecade memory-with two-dimensional data-storage capability.
Enhanced electromechanical response of ferroelectrics due to charged domain walls
Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Gureev, Maxim; Setter, Nava
2012-01-01
While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO3 with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics. PMID:22434191
Enhanced electromechanical response of ferroelectrics due to charged domain walls.
Sluka, Tomas; Tagantsev, Alexander K; Damjanovic, Dragan; Gureev, Maxim; Setter, Nava
2012-03-20
While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO(3) with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics.
Friction in ferroelastic and martensitic materials
NASA Astrophysics Data System (ADS)
Salje, E. K. H.
2015-04-01
Friction during ferroelastic and martensite phase transformations and under external elastic forcing is related to the appearance of jerks as fingerprint for avalanches of moving domain boundaries. It is argued that such avalanches can be observed if the time scale of the experiment is sufficiently long to allow a statistical evaluation and have a time resolution compatible with the characteristic duration of an avalanche. Typical experimental methods include the observation of acoustic emission, resonance elastic spectroscopy, calorimetry, and advanced phonon spectroscopy. The changes of the internal structure of mobile twin boundaries contribute to changes in their mobility and their friction. The local structures of jammed twin boundary patterns are elucidated by computer simulation, their time evolution is similar to that of observed avalanche dynamics.
Supercurrent enhancement in Bloch domain walls.
Robinson, J W A; Chiodi, F; Egilmez, M; Halász, Gábor B; Blamire, M G
2012-01-01
Conventional spin-singlet Cooper pairs convert into spin-triplet pairs in ferromagnetic Josephson junctions in which the superconductor/ferromagnet interfaces (S/F) are magnetically inhomogeneous. Although much of the theoretical work describing this triplet proximity effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practice it is not easily possible to isolate a DW and propagate a supercurrent through it. The rare-earth magnet Gd can form a field-tuneable in-plane Bloch DW if grown between non-co-linearly aligned ferromagnets. Here we report supercurrents through magnetic Ni-Gd-Ni nanopillars: by field annealing at room temperature, we are able to modify the low temperature DW-state in Gd and this result has a striking effect on the junction supercurrent at 4.2 K. We argue that this result can only be explained in terms of the interconversion of triplet and singlet pairs, the efficiency of which depends on the magnetic helicity of the structure.
Supercurrent enhancement in Bloch domain walls
Robinson, J. W. A.; Chiodi, F.; Egilmez, M.; Halász, Gábor B.; Blamire, M. G.
2012-01-01
Conventional spin-singlet Cooper pairs convert into spin-triplet pairs in ferromagnetic Josephson junctions in which the superconductor/ferromagnet interfaces (S/F) are magnetically inhomogeneous. Although much of the theoretical work describing this triplet proximity effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practice it is not easily possible to isolate a DW and propagate a supercurrent through it. The rare-earth magnet Gd can form a field-tuneable in-plane Bloch DW if grown between non-co-linearly aligned ferromagnets. Here we report supercurrents through magnetic Ni-Gd-Ni nanopillars: by field annealing at room temperature, we are able to modify the low temperature DW-state in Gd and this result has a striking effect on the junction supercurrent at 4.2 K. We argue that this result can only be explained in terms of the interconversion of triplet and singlet pairs, the efficiency of which depends on the magnetic helicity of the structure. PMID:23019520
Domain wall QCD with physical quark masses
NASA Astrophysics Data System (ADS)
Blum, T.; Boyle, P. A.; Christ, N. H.; Frison, J.; Garron, N.; Hudspith, R. J.; Izubuchi, T.; Janowski, T.; Jung, C.; Jüttner, A.; Kelly, C.; Kenway, R. D.; Lehner, C.; Marinkovic, M.; Mawhinney, R. D.; McGlynn, G.; Murphy, D. J.; Ohta, S.; Portelli, A.; Sachrajda, C. T.; Soni, A.; Rbc; Ukqcd Collaborations
2016-04-01
We present results for several light hadronic quantities (fπ , fK, BK, mu d, ms, t01 /2, w0) obtained from simulations of 2 +1 flavor domain wall lattice QCD with large physical volumes and nearly physical pion masses at two lattice spacings. We perform a short, O (3 )%, extrapolation in pion mass to the physical values by combining our new data in a simultaneous chiral/continuum "global fit" with a number of other ensembles with heavier pion masses. We use the physical values of mπ, mK and mΩ to determine the two quark masses and the scale—all other quantities are outputs from our simulations. We obtain results with subpercent statistical errors and negligible chiral and finite-volume systematics for these light hadronic quantities, including fπ=130.2 (9 ) MeV ; fK=155.5 (8 ) MeV ; the average up/down quark mass and strange quark mass in the MS ¯ scheme at 3 GeV, 2.997(49) and 81.64(1.17) MeV respectively; and the neutral kaon mixing parameter, BK, in the renormalization group invariant scheme, 0.750(15) and the MS ¯ scheme at 3 GeV, 0.530(11).
Chiral damping of magnetic domain walls.
Jué, Emilie; Safeer, C K; Drouard, Marc; Lopez, Alexandre; Balint, Paul; Buda-Prejbeanu, Liliana; Boulle, Olivier; Auffret, Stephane; Schuhl, Alain; Manchon, Aurelien; Miron, Ioan Mihai; Gaudin, Gilles
2016-03-01
Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics, current-induced spin-orbit torques and some topological magnetic structures. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii-Moriya interaction (DMI) exhibit identical spatial symmetry. However, both scenarios are differentiated by their time reversal properties: whereas DMI is a conservative effect that can be modelled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing one to distinguish the physical mechanism. The chiral damping enriches the spectrum of physical phenomena engendered by the SIA, and is essential for conceiving DW and skyrmion devices owing to its coexistence with DMI (ref. ).
Efficient and controlled domain wall nucleation for magnetic shift registers.
Alejos, Oscar; Raposo, Víctor; Sanchez-Tejerina, Luis; Martinez, Eduardo
2017-09-19
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires creating, manipulating and detecting domain walls in ferromagnetic strips. Recent observations have shown highly efficient current-driven domain wall dynamics in multilayers lacking structural symmetry, where the walls adopt a chiral structure and can be driven at high velocities. However, putting such a device into practice requires the continuous and synchronous injection of domain walls as the first step. Here, we propose and demonstrate an efficient and simple scheme for nucleating domain walls using the symmetry of the spin orbit torques. Trains of short sub-nanosecond current pulses are injected in a double bit line to generate a localized longitudinal Oersted field in the ferromagnetic strip. Simultaneously, other current pulses are injected through the heavy metal under the ferromagnetic strip. Notably, the Slonczewski-like spin orbit torque assisted by the Oersted field allows the controlled injection of a series of domain walls, giving rise to a controlled manner for writing binary information and, consequently, to the design of a simple and efficient domain wall shift register.
Thermal and athermal crackling noise in ferroelastic nanostructures.
Zhao, Z; Ding, X; Sun, J; Salje, E K H
2014-04-09
The evolution of ferroelastic microstructures under external shear is determined by large-scale molecular dynamics simulations in two and three dimensions. Ferroelastic pattern formation was found to be almost identical in two and three dimensions, with only the ferroelastic transition temperature changing. The twin patterns generated by shear deformation depend strongly on temperature, with high wall densities nucleating under optimized temperature conditions. The dynamical tweed and mobile kink movement inside the twin walls is continuous and thermally activated at high temperatures, and becomes jerky and athermal at low temperatures. With decreasing temperature, the statistical distributions of dynamical tweed and kinks vary from a Vogel-Fulcher law P(E)~exp-(E/(T-TVF)) to an athermal power-law distribution P(E)~E-E. During the yield event, the nucleation of needles and kinks is always jerky, and the energy of the jerks is power-law distributed. Low-temperature yield proceeds via one large avalanche. With increasing temperature, the large avalanche is thermally broken up into a multitude of small segments. The power-law exponents reflect the changes in temperature, even in the athermal regime.
Magnetic Domain Wall Floating on a Spin Superfluid
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Kim, Se Kwon; Tserkovnyak, Yaroslav
2017-03-01
We theoretically investigate the transfer of angular momentum between a spin superfluid and a domain wall in an exchange coupled easy-axis and easy-plane magnetic insulator system. A domain wall in the easy-axis magnet absorbs spin angular momentum via disrupting the flow of a superfluid spin current in the easy-plane magnet. Focusing on an open geometry, where the spin current is injected electrically via a nonequilibrium spin accumulation, we derive analytical expressions for the resultant superfluid-mediated motion of the domain wall. The analytical results are supported by micromagnetic simulations. The proposed phenomenon extends the regime of magnon-driven domain-wall motion to the case where the magnons are condensed and exhibit superfluidity. Furthermore, by controlling the pinning of the domain wall, we propose a realization of a reconfigurable spin transistor. The long-distance dissipationless character of spin superfluids can thus be exploited for manipulating soliton-based memory and logic devices.
Ferroelectric domain wall motion induced by polarized light.
Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F
2015-03-17
Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light.
Thermal effects on transverse domain wall dynamics in magnetic nanowires
Leliaert, J.; Van de Wiele, B.; Vandermeulen, J.; Coene, A.; Dupré, L.; Vansteenkiste, A.; Waeyenberge, B. Van; Laurson, L.; Durin, G.
2015-05-18
Magnetic domain walls are proposed as data carriers in future spintronic devices, whose reliability depends on a complete understanding of the domain wall motion. Applications based on an accurate positioning of domain walls are inevitably influenced by thermal fluctuations. In this letter, we present a micromagnetic study of the thermal effects on this motion. As spin-polarized currents are the most used driving mechanism for domain walls, we have included this in our analysis. Our results show that at finite temperatures, the domain wall velocity has a drift and diffusion component, which are in excellent agreement with the theoretical values obtained from a generalized 1D model. The drift and diffusion component are independent of each other in perfect nanowires, and the mean square displacement scales linearly with time and temperature.
Mechanically driven domain wall movement in magnetoelastic nanomagnets
NASA Astrophysics Data System (ADS)
Mathurin, Théo; Giordano, Stefano; Dusch, Yannick; Tiercelin, Nicolas; Pernod, Philippe; Preobrazhensky, Vladimir
2016-07-01
Magnetic domain walls are fundamental objects arising in ferromagnetic materials, largely investigated both through micromagnetic simulations and experiments. While current- and field-based techniques for inducing domain wall propagation have been widely studied for fundamental understanding and application-oriented purposes, the possibility to manipulate domain walls using mechanical stress in magnetoelastic materials has only recently drawn interest. Here, a complete analytical model describing stress-induced transverse domain wall movement in ferromagnetic nanostripe with variable cross-section is presented. This approach yields a nonlinear integro-differential equation describing the magnetization field. Its numerical implementation, based on the nonlinear relaxation method, demonstrates the possibility to precisely control the position of a domain wall through mechanical action.
Ferroelectric domain wall motion induced by polarized light
Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.
2015-01-01
Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918
Thermal stability of a magnetic domain wall in nanowires
NASA Astrophysics Data System (ADS)
Fukami, S.; Ieda, J.; Ohno, H.
2015-06-01
We study the thermal stability of a magnetic domain wall pinned in nanowires with various widths and thicknesses made of Co/Ni multilayers and analyze the effective volume that governs the thermal stability. We find that, above a critical wire width, the domain wall depinning is initiated by a subvolume excitation and that the critical width is dependent on the wire thickness. The obtained findings are supported by the distribution of critical current density for domain wall depinning and are qualitatively described by an analytical model in which the balance between the Zeeman energy and domain wall elastic energy is considered. We also show a different behavior between the device size dependence of the thermal stability and that of critical current, leading to an enhancement of domain wall motion efficiency with decreasing the device size.
Dynamics of magnetic domain walls under their own inertia.
Thomas, Luc; Moriya, Rai; Rettner, Charles; Parkin, Stuart S P
2010-12-24
The motion of magnetic domain walls induced by spin-polarized current has considerable potential for use in magnetic memory and logic devices. Key to the success of these devices is the precise positioning of individual domain walls along magnetic nanowires, using current pulses. We show that domain walls move surprisingly long distances of several micrometers and relax over several tens of nanoseconds, under their own inertia, when the current stimulus is removed. We also show that the net distance traveled by the domain wall is exactly proportional to the current pulse length because of the lag derived from its acceleration at the onset of the pulse. Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses.
Spin torque and interactions in ferromagnetic semiconductor domain walls
NASA Astrophysics Data System (ADS)
Golovatski, Elizabeth Ann
The motion of domain walls due to the spin torque generated by coherent carrier transport is of considerable interest for the development of spintronic devices. We model the charge and spin transport through domain walls in ferromagnetic semiconductors for various systems. With an appropriate model Hamiltonian for the spin-dependent potential, we calculate wavefunctions inside the domain walls which are then used to calculate transmission and reflection coefficients, which are then in turn used to calculate current and spin torque. Starting with a simple approximation for the change in magnetization inside the domain wall, and ending with a sophisticated transfer matrix method, we model the common pi wall, the less-studied 2pi wall, and a system of two pi walls separated by a variable distance. We uncover an interesting width dependence on the transport properties of the domain wall. 2pi walls in particular, have definitive maximums in resistance and spin torque for certain domain wall widths that can be seen as a function of the spin mistracking in the system---when the spins are either passing straight through the domain wall (narrow walls) or adiabatically following the magnetization (wide walls), the resistance is low as transmission is high. In the intermediate region, there is room for the spins to rotate their magnetization, but not necessarily all the way through a 360 degree rotation, leading to reflection and resistance. We also calculate that there are widths for which the total velocity of a 2pi wall is greater than that of a same-sized pi wall. In the double-wall system, we model how the system reacts to changes in the separation of the domain walls. When the domain walls are far apart, they act as a spin-selective resonant double barrier, with sharp resonance peaks in the transmission profile. Brought closer and closer together, the number and sharpness of the peaks decrease, the spectrum smooths out, and the domain walls brought together have a
Domain walls in Einstein-Gauss-Bonnet bulk
Mazharimousavi, S. Habib; Halilsoy, M.
2010-10-15
We investigate the dynamics of a n-dimensional domain wall in a n+1-dimensional Einstein-Gauss-Bonnet bulk. Exact effective potential induced by the Gauss-Bonnet (GB) term on the wall is derived. In the absence of the GB term we recover the familiar gravitational and antiharmonic oscillator potentials. Inclusion of the GB correction gives rise to a minimum radius of bounce for the Friedmann-Robertson-Walker universe expanding with a negative pressure on the domain wall.
Nanoscale probing and photonic applications of ferroelectric domain walls
NASA Astrophysics Data System (ADS)
Tian, Lili
Ferroelectrics are a versatile solid-state platform for a new generation of micro- and nanophotonic applications. Conventional integrated optics has often treated the phenomenon of ferroelectric domains and domain walls more as a nuisance rather than an asset. Ironically, domain walls can be immensely valuable in realizing a wide variety of new functionalities such as laser scanning, dynamic focusing, frequency conversion, beam shaping, waveguiding, high-speed modulation, and photonic crystal structures. All of these functions can be realized by shaping ferroelectric domain walls into arbitrary shapes on micro to nanoscale dimensions. Domain walls, however, have a mind of their own when it comes to shaping them. This thesis will focus on the fundamental domain switching characteristics under the uniform electrical fields, and local electromechanical response across the single ferroelectric domain wall in ferroelectric crystals lithium niobate, lithium tantalate and strontium barium niobate. The local electromechanical response across the single was modeled using finite element method to better understand the fundamentals of piezoelectric force microscopy in order to quantitatively interpret the measured material properties. The influence of stoichiometry on domain dynamics on macroscale and on local electromechanical properties on nanoscale was studied. The challenges in shaping ferroelectric domain are discussed and the examples of optical devices such as optical switch and optical beam deflector based on ferroelectric domain walls are presented.
Ballistic rectification of vortex domain wall chirality at nanowire corners
Omari, K.; Bradley, R. C.; Broomhall, T. J.; Hodges, M. P. P.; Hayward, T. J.; Rosamond, M. C.; Linfield, E. H.; Im, M.-Y.; Fischer, P.
2015-11-30
The interactions of vortex domain walls with corners in planar magnetic nanowires are probed using magnetic soft X-ray transmission microscopy. We show that when the domain walls are propagated into sharp corners using applied magnetic fields above a critical value, their chiralities are rectified to either clockwise or anticlockwise circulation depending on whether the corners turn left or right. Single-shot focused magneto-optic Kerr effect measurements are then used to demonstrate how, when combined with modes of domain propagation that conserve vortex chirality, this allows us to dramatically reduce the stochasticity of domain pinning at artificial defect sites. Our results provide a tool for controlling domain wall chirality and pinning behavior both in further experimental studies and in future domain wall-based memory, logic and sensor technologies.
Formation of charged ferroelectric domain walls with controlled periodicity
Bednyakov, Petr S.; Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Setter, Nava
2015-01-01
Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic circuitry. In addition, theory predicts that charged domain walls may influence the electromechanical response of ferroelectrics, with strong enhancement upon increased charged domain wall density. The existence of charged domain walls in proper ferroelectrics is disfavoured by their high formation energy and methods of their preparation in predefined patterns are unknown. Here we develop the theoretical background for the formation of charged domain walls in proper ferroelectrics using energy considerations and outline favourable conditions for their engineering. We experimentally demonstrate, in BaTiO3 single crystals the controlled build-up of high density charged domain wall patterns, down to a spacing of 7 μm with a predominant mixed electronic and ionic screening scenario, hinting to a possible exploitation of charged domain walls in agile electronics and sensing devices. PMID:26516026
Bistability of ferroelectric domain walls: Morphotropic boundary and strain effects
NASA Astrophysics Data System (ADS)
Yudin, P. V.; Tagantsev, A. K.; Setter, N.
2013-07-01
The internal structure of neutral 180∘ domain walls in perovskite-type ferroelectrics is studied in terms of Landau theory taking into account electromechanical coupling. The study is focused on the wall bistability, a factor of potential interest for information storage. A strong impact of elastic effects on the wall structure is demonstrated. It is shown that the conclusion derived earlier by Houchmandzadeh [J. Phys.: Condens. MatterJCOMEL0953-898410.1088/0953-8984/3/27/009 3, 5163 (1991)], neglecting the electrostictive coupling, that all the domain walls near the boundary between two ordered phases become bistable may not hold due to the elastic effects. Criteria for domain-wall bistability are formulated in terms of the materials thermodynamic properties and the wall orientation. The obtained general results are applied to the analysis of bistability of 180∘ domain walls in Pb(Zrc,Ti1-c)O3 near the tetragonal-rhombohedral morphotropic boundary. It is shown that, on the tetragonal side, the electrostrictive interaction suppresses the wall bistability that was predicted in terms of the theory neglecting the elastic effects. On the rhombohedral side, the domain walls are found bistable or not depending on the anisotropy of the correlation energy, the information on which is not presently available. It is also shown that, in the rhombohedral phase, the anisotropy of the correlation energy results in appearance of additional polarization component in the plane of the wall.
Dynamical evolution of domain walls in an expanding universe
NASA Technical Reports Server (NTRS)
Press, William H.; Ryden, Barbara S.; Spergel, David N.
1989-01-01
Whenever the potential of a scalar field has two or more separated, degenerate minima, domain walls form as the universe cools. The evolution of the resulting network of domain walls is calculated for the case of two potential minima in two and three dimensions, including wall annihilation, crossing, and reconnection effects. The nature of the evolution is found to be largely independent of the rate at which the universe expands. Wall annihilation and reconnection occur almost as fast as causality allows, so that the horizon volume is 'swept clean' and contains, at any time, only about one, fairly smooth, wall. Quantitative statistics are given. The total area of wall per volume decreases as the first power of time. The relative slowness of the decrease and the smoothness of the wall on the horizon scale make it impossible for walls to both generate large-scale structure and be consistent with quadrupole microwave background anisotropy limits.
Dynamical evolution of domain walls in an expanding universe
NASA Technical Reports Server (NTRS)
Press, William H.; Ryden, Barbara S.; Spergel, David N.
1989-01-01
Whenever the potential of a scalar field has two or more separated, degenerate minima, domain walls form as the universe cools. The evolution of the resulting network of domain walls is calculated for the case of two potential minima in two and three dimensions, including wall annihilation, crossing, and reconnection effects. The nature of the evolution is found to be largely independent of the rate at which the universe expands. Wall annihilation and reconnection occur almost as fast as causality allows, so that the horizon volume is 'swept clean' and contains, at any time, only about one, fairly smooth, wall. Quantitative statistics are given. The total area of wall per volume decreases as the first power of time. The relative slowness of the decrease and the smoothness of the wall on the horizon scale make it impossible for walls to both generate large-scale structure and be consistent with quadrupole microwave background anisotropy limits.
Domain wall pinning in ultra-narrow electromigrated break junctions.
Reeve, Robert M; Loescher, André; Mawass, Mohamad-Assaad; Hoffmann-Vogel, Regina; Kläui, Mathias
2014-11-26
The study of magnetic domain walls in constrained geometries is an important topic, yet when dealing with extreme nanoscale magnetic systems artefacts can often dominate the measurements and obscure the effects of intrinsic magnetic origin. In this work we study the evolution of domain wall depinning in electromigrated ferromagnetic junctions which are both initially fabricated and subsequently tailored in-situ in clean ultra-high vacuum conditions. Carefully designed Ni(80)Fe(20) (Permalloy) notched half-ring structures are fabricated and investigated as a function of constriction width by tailoring the size of the contact using controlled in-situ electromigration. It is found that the domain wall pinning strength is increased on reducing the contact size in line with a reduction of the wall energy in narrower constrictions. Furthermore, the angular dependency and symmetry of the depinning field is measured to determine the full pinning potential for a domain wall in a system with a narrow constriction.
Efficient Photovoltaic Current Generation at Ferroelectric Domain Walls
NASA Astrophysics Data System (ADS)
Seidel, Jan; Fu, Deyi; Yang, Seung-Yeul; Alarcón-Lladó, Esther; Wu, Junqiao; Ramesh, Ramamoorthy; Ager, Joel W., III
2011-09-01
We elucidate the mechanism of a newly observed photovoltaic effect which occurs in ferroelectrics with periodic domain structures. Under sufficiently strong illumination, domain walls function as nanoscale generators of the photovoltaic current. The steps in the electrostatic potential function to accumulate electrons and holes on opposite sides of the walls while locally reducing the concentration of the oppositely charged carriers. As a result, the recombination rate adjacent to the walls is reduced, leading to a net diffusion current. In open circuit, photovoltages for periodically ordered domain walls are additive and voltages much larger than the band gap can be generated. The internal quantum efficiency for individual domain walls can be surprisingly high, approaching 10% for above band-gap photons. Although we have found the effect in BiFeO3 films, it should occur in any system with a similar periodic potential.
Unidirectional thermal effects in current-induced domain wall motion.
Torrejon, J; Malinowski, G; Pelloux, M; Weil, R; Thiaville, A; Curiale, J; Lacour, D; Montaigne, F; Hehn, M
2012-09-07
We report experimental evidence of thermal effects on the displacement of vortex walls in NiFe nanostrips. With the use of nanosecond current pulses, a unidirectional motion of the magnetic domain walls towards the hotter part of the nanostrips is observed, in addition to current-induced domain wall motion. By tuning the heat dissipation in the samples and modeling the heat diffusion, we conclude that this unidirectional motion can only be explained by the presence of a temperature profile along the nanostrip. A quantitative analysis of the experiments shows that, on top of the classical thermodynamic pressure on the domain wall, another force, probably the magnonic spin Seebeck effect, is displacing the domain walls.
Indirect localization of a magnetic domain wall mediated by quasi walls
Lacour, D.; Montaigne, F.; Rougemaille, N.; Belkhou, R.; Raabe, J.; Hehn, M.
2015-01-01
The manipulation of magnetic domain walls in thin films and nanostructures opens new opportunities for fundamental and applied research. But controlling reliably the position of a moving domain wall still remains challenging. So far, most of the studies aimed at understanding the physics of pinning and depinning processes in the magnetic layer in which the wall moves (active layer). In these studies, the role of other magnetic layers in the stack has been often ignored. Here, we report an indirect localization process of 180° domain walls that occurs in magnetic tunnel junctions, commonly used in spintronics. Combining Scanning Transmission X-Ray Microscopy and micromagnetic simulations, magnetic configurations in both layers are resolved. When nucleating a 180° domain wall in the active layer, a quasi wall is created in the reference layer, atop the wall. The wall and its quasi wall must then be moved or positioned together, as a unique object. As a mutual effect, a localized change of the magnetic properties in the reference layer induces a localized quasi wall in the active layer. The two types of quasi walls are shown to be responsible for an indirect localization process of the 180° domain wall in the active layer. PMID:26011004
Indirect localization of a magnetic domain wall mediated by quasi walls.
Lacour, D; Montaigne, F; Rougemaille, N; Belkhou, R; Raabe, J; Hehn, M
2015-05-26
The manipulation of magnetic domain walls in thin films and nanostructures opens new opportunities for fundamental and applied research. But controlling reliably the position of a moving domain wall still remains challenging. So far, most of the studies aimed at understanding the physics of pinning and depinning processes in the magnetic layer in which the wall moves (active layer). In these studies, the role of other magnetic layers in the stack has been often ignored. Here, we report an indirect localization process of 180° domain walls that occurs in magnetic tunnel junctions, commonly used in spintronics. Combining Scanning Transmission X-Ray Microscopy and micromagnetic simulations, magnetic configurations in both layers are resolved. When nucleating a 180° domain wall in the active layer, a quasi wall is created in the reference layer, atop the wall. The wall and its quasi wall must then be moved or positioned together, as a unique object. As a mutual effect, a localized change of the magnetic properties in the reference layer induces a localized quasi wall in the active layer. The two types of quasi walls are shown to be responsible for an indirect localization process of the 180° domain wall in the active layer.
Functional electronic inversion layers at ferroelectric domain walls
NASA Astrophysics Data System (ADS)
Mundy, J. A.; Schaab, J.; Kumagai, Y.; Cano, A.; Stengel, M.; Krug, I. P.; Gottlob, D. M.; Doğanay, H.; Holtz, M. E.; Held, R.; Yan, Z.; Bourret, E.; Schneider, C. M.; Schlom, D. G.; Muller, D. A.; Ramesh, R.; Spaldin, N. A.; Meier, D.
2017-06-01
Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation--and eventual activation--of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.
Surface effect on domain wall width in ferroelectrics
Eliseev, Eugene A.; Morozovska, Anna N.; Kalinin, Sergei V.; Li, Yulan; Shen, Jie; Glinchuk, Maya D.; Chen , L.Q.; Gopalan, Venkatraman
2009-10-15
We study the effect of the depolarization field on a domain wall structure near the surface of a ferroelectric. Since in real situation bound and screening charges form an electric double layer, the breaking of this layer by the domain wall induces stray depolarization field, which in turn changes the domain wall structure. Power law decay of the stray field results in the power law of polarization saturation near the surface, as compared to exponential saturation in the bulk. Obtained results predict that the surface broadening of ferroelectric domain walls appeared near Curie temperature as well as describe domain wall depth profile in weak ferroelectrics. We qualitatively describe extra-broad domain walls near LiNbO3 and LiTaO3 surfaces observed experimentally at room temperature, which probably originate at high temperatures but did not fully relax their width with temperature decrease allowing for lattice pinning and defect centers. Thus results have broad implication for fundamental issues such as maximal information storage density in ferroelectric data storage, domain wall pinning mechanisms at surfaces and interfaces, and nucleation dynamics.
Ultrafast domain wall dynamics in magnetic nanotubes and nanowires
NASA Astrophysics Data System (ADS)
Hertel, R.
2016-12-01
The dynamic properties of magnetic domain walls in nanotubes and in cylindrical nanowires can be significantly different from the well known domain wall dynamics in thin films and in flat thin strips. The main differences are the occurrence of chiral symmetry breaking and, perhaps more importantly, the possibility to obtain magnetic domain walls that are stable against the usual Walker breakdown. This stability enables the magnetic field-driven propagation of the domain walls in nanotubes and nanocylinders at constant velocities which are significantly higher than the usual propagation speeds of the domain walls. Simulations predict that the ultrafast motion of magnetic domain walls at velocities in a range above 1000 m s-1 can lead to the spontaneous excitation of spin waves in a process that is the magnetic analog of the Cherenkov effect. In the case of solid cylindrical wires, the domain wall can contain a micromagnetic point singularity. We discuss the current knowledge on the ultrafast dynamics of such Bloch points, which remains still largely unexplored.
Dzyaloshinskii-Moriya domain walls in magnetic nanotubes
NASA Astrophysics Data System (ADS)
Goussev, Arseni; Robbins, J. M.; Slastikov, Valeriy; Tretiakov, Oleg A.
2016-02-01
We present an analytic study of domain-wall statics and dynamics in ferromagnetic nanotubes with spin-orbit-induced Dzyaloshinskii-Moriya interaction (DMI). Even at the level of statics, dramatic effects arise from the interplay of space curvature and DMI: the domains become chirally twisted, leading to more compact domain walls. The dynamics of these chiral structures exhibits several interesting features. Under weak applied currents, they propagate without distortion. The dynamical response is further enriched by the application of an external magnetic field: the domain-wall velocity becomes chirality dependent and can be significantly increased by varying the DMI. These characteristics allow for enhanced control of domain-wall motion in nanotubes with DMI, increasing their potential as information carriers in future logic and storage devices.
Calculation of the strange quark mass using domain wall fermions
Blum, Tom; Soni, Amarjit; Wingate, Matthew
1999-12-01
We present a first calculation of the strange quark mass using domain wall fermions. This paper contains an overview of the domain wall discretization and a pedagogical presentation of the perturbative calculation necessary for computing the mass renormalization. We combine the latter with numerical simulations to estimate the strange quark mass. Our final result in the quenched approximation is 95(26) MeV in the MS scheme at a scale of 2 GeV. We find that domain wall fermions have a small perturbative mass renormalization, similar to Wilson quarks, and exhibit good scaling behavior. (c) 1999 The American Physical Society.
Domain wall motion in synthetic Co2Si nanowires.
Liu, Gang; Lin, Yung-Chen; Liao, Lei; Liu, Lixin; Chen, Yu; Liu, Yuan; Weiss, Nathan O; Zhou, Hailong; Huang, Yu; Duan, Xiangfeng
2012-04-11
We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.
Mechanical Actuation of Magnetic Domain-Wall Motion
NASA Astrophysics Data System (ADS)
Kim, Se Kwon; Hill, Daniel; Tserkovnyak, Yaroslav
2016-12-01
We theoretically study the motion of a magnetic domain wall induced by transverse elastic waves in a one-dimensional magnetic wire, which respects both rotational and translational symmetries. By invoking the conservation of the associated total angular and linear momenta, we are able to derive the torque and the force on the domain wall exerted by the waves. We then show how ferromagnetic and antiferromagnetic domain walls can be driven by circularly and linearly polarized waves, respectively. We envision that elastic waves may provide effective means to drive the dynamics of magnetic solitons in insulators.
Ferroelectricity of domain walls in rare earth iron garnet films
NASA Astrophysics Data System (ADS)
Popov, A. I.; Zvezdin, K. A.; Gareeva, Z. V.; Mazhitova, F. A.; Vakhitov, R. M.; Yumaguzin, A. R.; Zvezdin, A. K.
2016-11-01
In this paper, we report on electric polarization arising in a vicinity of Bloch-like domain walls in rare-earth iron garnet films. The domain walls generate an intrinsic magnetic field that breaks an antiferroelectric structure formed in the garnets due to an exchange interaction between rare earth and iron sublattices. We explore 180° domain walls whose formation is energetically preferable in the films with perpendicular magnetic anisotropy. Magnetic and electric structures of the 180° quasi-Bloch domain walls have been simulated at various relations between system parameters. Singlet, doublet ground states of rare earth ions and strongly anisotropic rare earth Ising ions have been considered. Our results show that electric polarization appears in rare earth garnet films at Bloch domain walls, and the maximum of magnetic inhomogeneity is not always linked to the maximum of electric polarization. A number of factors including the temperature, the state of the rare earth ion and the type of a wall influence magnetically induced electric polarization. We show that the value of polarization can be enhanced by the shrinking of the Bloch domain wall width, decreasing the temperature, and increasing the deviations of magnetization from the Bloch rotation that are regulated by impacts given by magnetic anisotropies of the films.
Gravitational waves from domain walls and their implications
NASA Astrophysics Data System (ADS)
Nakayama, Kazunori; Takahashi, Fuminobu; Yokozaki, Norimi
2017-07-01
We evaluate the impact of domain-wall annihilation on the currently ongoing and planned gravitational wave experiments, including a case in which domain walls experience a frictional force due to interactions with the ambient plasma. We show the sensitivity reach in terms of physical parameters, namely, the wall tension and the annihilation temperature. We find that a Higgs portal scalar, which stabilizes the Higgs potential at high energy scales, can form domain walls whose annihilation produces a large amount of gravitational waves within the reach of the advanced LIGO experiment (O5). Domain wall annihilation can also generate baryon asymmetry if the scalar is coupled to either SU(2)L gauge fields or the (B - L) current. This is a variant of spontaneous baryogenesis, but it naturally avoids the isocurvature constraint due to the scaling behavior of the domain-wall evolution. We delineate the parameter space where the domain-wall baryogenesis works successfully and discuss its implications for the gravitational wave experiments.
Microwave conductance of ferroelectric domain walls in lead titanate
NASA Astrophysics Data System (ADS)
Tselev, Alexander; Cao, Ye; Yu, Pu; Kalinin, Sergei V.; Maksymovych, Petro
Numerous theoretical works predicted electronically conducting domain walls in otherwise insulating ferroelectric crystals. A number of recent experiments reported conducting walls, although conductivity itself and a conclusive proof of conductance mechanism remain elusive, largely due to the electrical contact problem. The latter can be overcome using high-frequency AC voltage. Here we will present our successful measurements of microwave conductance at 180o domain walls in lead titanate using microwave microscopy. AC conducting domain walls can be repeatably reconfigured and have extraordinary stability in time and temperature. AC conductivity is detected even when DC is not. Quantitative modeling reveals that the conductance of domain walls is comparable to doped silicon. We will also present a new and robust mechanism to create charged domain walls in any ferroelectric lattice. Overall, this sets the stage for a new generation of local experiments on conducting domain walls, and furthers the prospects of their application in fast electronic devices. AT, YC, SVK, PM supported by Division of Materials Sciences and Engineering, Office of Science, Basic Energy Sciences, U. S. DOE. PY supported by the National Basic Research Program of China (2015CB921700).
Ferroelectricity of domain walls in rare earth iron garnet films.
Popov, A I; Zvezdin, K A; Gareeva, Z V; Mazhitova, F A; Vakhitov, R M; Yumaguzin, A R; Zvezdin, A K
2016-11-16
In this paper, we report on electric polarization arising in a vicinity of Bloch-like domain walls in rare-earth iron garnet films. The domain walls generate an intrinsic magnetic field that breaks an antiferroelectric structure formed in the garnets due to an exchange interaction between rare earth and iron sublattices. We explore 180° domain walls whose formation is energetically preferable in the films with perpendicular magnetic anisotropy. Magnetic and electric structures of the 180° quasi-Bloch domain walls have been simulated at various relations between system parameters. Singlet, doublet ground states of rare earth ions and strongly anisotropic rare earth Ising ions have been considered. Our results show that electric polarization appears in rare earth garnet films at Bloch domain walls, and the maximum of magnetic inhomogeneity is not always linked to the maximum of electric polarization. A number of factors including the temperature, the state of the rare earth ion and the type of a wall influence magnetically induced electric polarization. We show that the value of polarization can be enhanced by the shrinking of the Bloch domain wall width, decreasing the temperature, and increasing the deviations of magnetization from the Bloch rotation that are regulated by impacts given by magnetic anisotropies of the films.
Magnetic domain-wall dynamics in a submicrometre ferromagnetic structure.
Atkinson, Del; Allwood, Dan A; Xiong, Gang; Cooke, Michael D; Faulkner, Colm C; Cowburn, Russell P
2003-02-01
As fabrication technology pushes the dimensions of ferromagnetic structures into the nanoscale, understanding the magnetization processes of these structures is of fundamental interest, and key to future applications in hard disk drives, magnetic random access memory and other 'spintronic' devices. Measurements on elongated magnetic nanostructures highlighted the importance of nucleation and propagation of a magnetic boundary, or domain wall, between opposing magnetic domains in the magnetization reversal process. Domain-wall propagation in confined structures is of basic interest and critical to the performance of a recently demonstrated magnetic logic scheme for spintronics. A previous study of a 500-nm-wide NiFe structure obtained very low domain-wall mobility in a three-layer device. Here we report room-temperature measurements of the propagation velocity of a domain wall in a single-layer planar Ni80Fe20 ferromagnetic nanowire 200 nm wide. The wall velocities are extremely high and, importantly, the intrinsic wall mobility is close to that in continuous films, indicating that lateral confinement does not significantly affect the gyromagnetic spin damping parameter to the extreme extent previously suggested. Consequently the prospects for high-speed domain-wall motion in future nanoscale spintronic devices are excellent.
Microscopic and macroscopic signatures of antiferromagnetic domain walls.
Jaramillo, R; Rosenbaum, T F; Isaacs, E D; Shpyrko, O G; Evans, P G; Aeppli, G; Cai, Z
2007-03-16
Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order 5 x 10(-5) mu Omega cm(2) at a temperature of 100 K.
Scalar triplet on a domain wall: an exact solution
NASA Astrophysics Data System (ADS)
Gani, Vakhid A.; Lizunova, Mariya A.; Radomskiy, Roman V.
2016-04-01
We study a model with a real scalar Higgs field and a scalar triplet field that allows existence of a topological defect — a domain wall. The wall breaks the global O(3) symmetry of the model, which gives rise to non-Abelian orientational degrees of freedom. We found an exact analytic solution that describes a domain wall with a localized configuration of the triplet field on it. This solution enables one to calculate contributions to the action from the orientational and translational degrees of freedom of the triplet field. We also study the linear stability of the domain wall with the triplet field switched off. We obtain that degrees of freedom localized on the wall can appear or do not appear depending on the parameters of the model.
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.
2016-01-01
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
NASA Astrophysics Data System (ADS)
Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.
2016-04-01
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.
Zhang, S F; Gan, W L; Kwon, J; Luo, F L; Lim, G J; Wang, J B; Lew, W S
2016-04-21
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
Observations of ferroelastic switching by Raman spectroscopy in 18-percent ceria-stabilized zirconia
NASA Astrophysics Data System (ADS)
Bolon, Amy; Munoz Saldana, Juan; Gentleman, Molly
2011-03-01
Ferroelastic switching has been shown to be responsible for significant increases in the toughness of tetragonal zirconia ceramics. Observations of switching and measurements of coercive stress have generally been limited to TEM studies on large single crystals. In this study we show that it is possible to observe ferroelastic switching in 18 mole-percent ceria stabilized zirconia using polarized confocal Raman spectroscopy. Observations were made on bulk polycrystalline samples indented with a standard Vicker's indent and exhibited reorientation of crystal domains along the crack as well as near the crack tip. Coercive stress measurements were made by loading the samples uniaxially while making measurements of domain orientation.
Domain wall formation in late-time phase transitions
NASA Technical Reports Server (NTRS)
Kolb, Edward W.; Wang, Yun
1992-01-01
We examine domain wall formulation in late time phase transitions. We find that in the invisible axion domain wall phenomenon, thermal effects alone are insufficient to drive different parts of the disconnected vacuum manifold. This suggests that domain walls do not form unless either there is some supplemental (but perhaps not unreasonable) dynamics to localize the scalar field responsible for the phase transition to the low temperature maximum (to an extraordinary precision) before the onset of the phase transition, or there is some non-thermal mechanism to produce large fluctuations in the scalar field. The fact that domain wall production is not a robust prediction of late time transitions may suggest future directions in model building.
Chirality-Dependent Transmission of Spin Waves through Domain Walls
NASA Astrophysics Data System (ADS)
Buijnsters, F. J.; Ferreiros, Y.; Fasolino, A.; Katsnelson, M. I.
2016-04-01
Spin-wave technology (magnonics) has the potential to further reduce the size and energy consumption of information-processing devices. In the submicrometer regime (exchange spin waves), topological defects such as domain walls may constitute active elements to manipulate spin waves and perform logic operations. We predict that spin waves that pass through a domain wall in an ultrathin perpendicular-anisotropy film experience a phase shift that depends on the orientation of the domain wall (chirality). The effect, which is absent in bulk materials, originates from the interfacial Dzyaloshinskii-Moriya interaction and can be interpreted as a geometric phase. We demonstrate analytically and by means of micromagnetic simulations that the phase shift is strong enough to switch between constructive and destructive interference. The two chirality states of the domain wall may serve as a memory bit or spin-wave switch in magnonic devices.
Magnetic domain wall conduits for single cell applications.
Donolato, M; Torti, A; Kostesha, N; Deryabina, M; Sogne, E; Vavassori, P; Hansen, M F; Bertacco, R
2011-09-07
The ability to trap, manipulate and release single cells on a surface is important both for fundamental studies of cellular processes and for the development of novel lab-on-chip miniaturized tools for biological and medical applications. In this paper we demonstrate how magnetic domain walls generated in micro- and nano-structures fabricated on a chip surface can be used to handle single yeast cells labeled with magnetic beads. In detail, first we show that the proposed approach maintains the microorganism viable, as proven by monitoring the division of labeled yeast cells trapped by domain walls over 16 hours. Moreover, we demonstrate the controlled transport and release of individual yeast cells via displacement and annihilation of individual domain walls in micro- and nano-sized magnetic structures. These results pave the way to the implementation of magnetic devices based on domain walls technology in lab-on-chip systems devoted to accurate individual cell trapping and manipulation.
Thermal variations of domain wall thickness and number of domains in magnetic rectangular grains
NASA Astrophysics Data System (ADS)
Xu, Song; Merrill, Ronald T.
1990-12-01
Equilibrium domain wall thickness and number of domains in rectangular magnetic grains are determined by using a modified Amar model. It is shown that domain structure, particularly domain wall thickness, in a magnetized grain depends strongly on grain shape and orientation. These dependencies are attributed to the existence of two competing self-magnetostatic interactions, one from the ends of the grain and the other from the sides. One of the consequences of this is that the thermal variation of domain wall thickness in an elongated grain is greater (smaller) than predicted by classical theory when the grain is magnetized along the shortest (longest) dimension. For magnetite, classical theory provides a good approximation in predicting both domain wall thickness and number of domains in equal-dimensional grains larger than about 4 μm.
Approximation of fermion resonances on a splitting domain wall
NASA Astrophysics Data System (ADS)
Farokhtabar, A.; Tofighi, A.
2017-08-01
In this paper the splitting of a domain wall is investigated analytically in flat spacetime. We also study fermion localization and resonances on this domain wall. Masses of Kaluza-Klein modes determined by two methods, numerical method and approximation one. We observe that the agreement between approximated values and numeric ones is good. It is found that the number of fermion resonances on the brane is increased with mass parameter.
Spontaneous layer-pseudospin domain walls in bilayer graphene.
Li, Xiao; Zhang, Fan; Niu, Qian; MacDonald, A H
2014-09-12
Bilayer graphene is susceptible to a family of unusual broken symmetry states with spin and valley dependent layer polarization. We report on a microscopic study of the domain walls in these systems, demonstrating that they have interesting microscopic structure related to the topological character of the ordered states. We use our results to show that the metal-insulator transition temperature in bilayer graphene is reduced from mean-field estimates by thermal excitation of domain walls.
Enhanced controllability of domain-wall pinning by asymmetric control of domain-wall injection.
Ahn, Sung-Min; Moon, Kyoung-Woong
2013-03-15
We investigate a control scheme for enhancing the controllability of domain-wall (DW) pinning on ferromagnetic devices using an interaction between magnetic charges distributed on a nanobar and at a notch, respectively. The scheme is realized at an artificial notch with a nanobar vertical to it on Permalloy nanowires with an asymmetrical pad. Injection fields for injecting the DWs from the asymmetrical pad to the nanowire show an asymmetrical dependence on the saturation angle for initializing the magnetization of the nanowire, and the injected DWs are pinned by the notch with the nanobar vertical to it. We have found that the landscape of the pinning potential energy experienced by the DWs depends on the magnetized direction of the nanobar and that its level is shifted by the injection field, leading to an increase or decrease in the depinning field with respect to the saturation angle. This is consistent with our estimation based on micromagnetic simulation.
Tailoring the chirality of magnetic domain walls by interface engineering.
Chen, Gong; Ma, Tianping; N'Diaye, Alpha T; Kwon, Heeyoung; Won, Changyeon; Wu, Yizheng; Schmid, Andreas K
2013-01-01
Contacting ferromagnetic films with normal metals changes how magnetic textures respond to electric currents, enabling surprisingly fast domain wall motions and spin texture-dependent propagation direction. These effects are attributed to domain wall chirality induced by the Dzyaloshinskii-Moriya interaction at interfaces, which suggests rich possibilities to influence domain wall dynamics if the Dzyaloshinskii-Moriya interaction can be adjusted. Chiral magnetism was seen in several film structures on appropriately chosen substrates where interfacial spin-orbit-coupling effects are strong. Here we use real-space imaging to visualize chiral domain walls in cobalt/nickel multilayers in contact with platinum and iridium. We show that the Dzyaloshinskii-Moriya interaction can be adjusted to stabilize either left-handed or right-handed Néel walls, or non-chiral Bloch walls by adjusting an interfacial spacer layer between the multilayers and the substrate. Our findings introduce domain wall chirality as a new degree of freedom, which may open up new opportunities for spintronics device designs.
Direct observation of closure domain wall mediated spin waves
Mozooni, Babak McCord, Jeffrey
2015-07-27
The generation and guiding of spin waves from and by magnetic domain walls are demonstrated. The spin waves radiate from pinned and oscillating magnetic closure domain walls and propagate linearly along a narrow path formed by the surrounding 180° asymmetric Bloch domain walls. The propagating spin wave modes are directly visualized by time-resolved magneto-optical Kerr microscopy with picosecond temporal resolution. A linear relationship between excitation frequency, wavelength, and number of spin waves per domain exists. Independent of the field excitation frequency, a constant phase velocity of spin waves propagation is obtained. Spin waves characteristics can be tuned by varying the magnetic domain dynamics, allowing for variable spin wave characteristics with magnetic field characteristics and histories.
a Numerical Investigation of Magnetic Domain Wall Motion
NASA Astrophysics Data System (ADS)
Patterson, George Nicholas
1993-01-01
Numerical simulation has given new insight into magnetization dynamics in thin films. This thesis reports on a numerical investigation of magnetic domain wall motion in thin iron garnet films. The magnetization is modeled as a continuum field with constant magnitude, subject to exchange, anisotropy, magnetic interactions, and an external drive field. The features of these systems are domains, walls, and lines. A co-moving formulation of the Landau -Lifshitz-Gilbert equation was developed and implemented on the Connection Machine 2. This approach allowed the investigation of large systems for useful length and time scales. This investigation confirms several mechanisms of domain wall motion and reports on one which is new. At low drive fields, the domain wall moves with a constant velocity and time-invariant profile. Beyond a critical field, a single horizontal Bloch line (HBL) is formed and moves through the wall. The HBL reduces the wall mobility and the average wall velocity varies quadratically with the applied field. At larger fields, HBLs are formed in the center of the wall by a local breakdown mechanism, nucleating a pair of HBLs. The HBLs propagate to the surface of the material where they unwind, and the process repeats. The domain wall velocity is a weak function of the external field in this region. The motion of a domain wall in a stripe array is also described and compared with experiment. Simulation results corroborate the features of overshoot and wall oscillation observed in experimental data, and indicate that they are due to the presence of an HBL in the wall. Comparison of the overall time scale indicates that the gyromagnetic ratio is incorrect for this material. This investigation also reports on the statics and dynamics of vertical Bloch line (VBL) pairs. The structure of a domain wall containing two pi VBLs, and a single 2pi VBL has been determined. The VBLs inhibit the formation of HBLs and significantly reduce wall mobility. The 2pi VBL
Dynamics of magnetic domain wall motion after nucleation: dependence on the wall energy.
Fukumoto, K; Kuch, W; Vogel, J; Romanens, F; Pizzini, S; Camarero, J; Bonfim, M; Kirschner, J
2006-03-10
The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.
Characteristic microwave background distortions from collapsing domain wall bubbles
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1990-01-01
The magnitude and angular pattern of distortions of the microwave background are analyzed by collapsing spherical domain walls. A characteristic pattern of redshift distortions of red or blue spikes surrounded by blue discs was found. The width and height of a spike is related to the diameter and magnitude of the disc. A measurement of the relations between these quantities thus can serve as an unambiguous indicator for a collapsing spherical domain wall. From the redshift distortion in the blue discs an upper bound was found on the surface energy density of the walls sigma is less than or approximately 8 MeV cubed.
Spin Hall torque magnetometry of Dzyaloshinskii domain walls
NASA Astrophysics Data System (ADS)
Emori, Satoru; Martinez, Eduardo; Lee, Kyung-Jin; Lee, Hyun-Woo; Bauer, Uwe; Ahn, Sung-Min; Agrawal, Parnika; Bono, David C.; Beach, Geoffrey S. D.
2014-11-01
Current-induced domain wall motion in the presence of the Dzyaloshinskii-Moriya interaction (DMI) is experimentally and theoretically investigated in heavy-metal/ferromagnet bilayers. The angular dependence of the current-induced torque and the magnetization structure of Dzyaloshinskii domain walls are described and quantified simultaneously in the presence of in-plane fields. We show that the DMI strength depends strongly on the heavy metal, varying by a factor of 20 between Ta and Pa, and that strong DMI leads to wall distortions not seen in conventional materials. These findings provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.
Realization of a Ferroelectric-Domain-Wall Tunnel Junction
NASA Astrophysics Data System (ADS)
Santamaria, Jacobo; Sanchez-Santolino, G.; Tornos, J.; Hernandez-Martin, D.; Beltran, J. I.; Cabero, M.; Perez-Muñoz, A.; Sefrioui, Z.; Leon, C.; Varela, M.; Munuera, C.; Mompean, F.; Garcia-Hernandez, M.; Muñoz, M. C.; Pennycook, S. J.
Incorporating ferroelectric domain walls as an active part of electronic devices holds the promise of interesting new functionalities. Here we form a ferroelectric BaTiO3 tunnel barrier just 4.4-nanometer thick, with ferromagnetic La0.7Sr0.3MnO3 electrodes, containing a head-to-head domain wall within its thickness. A confined electron gas is formed at the domain wall, stabilized by oxygen vacancies, which controls the tunneling transport of the magnetic tunnel junction. Resonant tunneling assisted by the discrete levels of the ferroelectric quantum well gives rise to strong quantum oscillations of the tunneling conductance. Our engineered, highly constrained, domain wall provides a major step forward towards the new concept ``The Wall is the Device'', exploiting the electronic properties of domain walls for ferroelectric tunnel barriers with new functionalities. Work at UCM supported by MINECO MAT2014-52405-C02-01 and ERC Starting Investigator Grant #239739 STEMOX. MCM acknowledges financial support from MICINN through grant MAT2012-38045-C04-04.
Spin waves and domain wall modes in curved magnetic nanowires.
Bocklage, Lars; Motl-Ziegler, Sandra; Topp, Jesco; Matsuyama, Toru; Meier, Guido
2014-07-02
The confinement of spin waves in inhomogeneous fields and spin wave interaction with domain walls has attracted interest due to possible applications in magnonics. We investigate spin waves in curved ferromagnetic nanowires. The field dispersion and localization of spin waves is revealed by comparison to known modes in stripes and taking into account the specific field reversal of the curved wire. In small wires we find a strongly altered mode spectrum in a certain field regime. Micromagnetic simulations show an extended domain wall within the wire in this field region. The domain wall shows several dynamic modes and changes the remaining spin wave modes. We find mode suppression as well as newly arising modes due to the strong inhomogenous internal field of the wall.
Nonlinear dynamics of domain walls with cross-ties
Dubovik, M. N.; Zverev, V. V.; Filippov, B. N.
2016-07-15
The dynamic behavior of a domain wall with cross-ties is analyzed on the basis of micromagnetic simulation with exact allowance for all main (exchange, magnetoanisotropic, and magnetostatic) interactions in thin magnetically uniaxial ferromagnetic films with planar anisotropy. It is found that the peculiarities of motion of such domain walls are closely related to the behavior of topological defects in the magnetization distribution (generation, motion, and annihilation of vortex–antivortex pairs on the film surface and Bloch points). We observe three different regimes of motion (stationary, periodic, and turbulent regimes), each of which is realized in a certain range of fields oriented along the easy magnetization axis. It is shown that the experimentally observed dynamic bends of the walls with cross-ties are determined by the type of motion of vortices and antivortices. The velocities of domain walls in different regimes are calculated, and the dynamic configurations of the magnetization and existing dynamic transitions between them are investigated.
Manipulation of vortices by magnetic domain walls
NASA Astrophysics Data System (ADS)
Goa, P. E.; Hauglin, H.; Olsen, A.˚. A. F.; Shantsev, D.; Johansen, T. H.
2003-01-01
In a type-II superconductor, the magnetic field penetrates in the form of thin filaments called vortices. The controlled behavior of these vortices may provide the basis for a new generation of nanodevices. We present here a series of experiments showing simultaneous manipulation and imaging of individual vortices in a NbSe2 single crystal. The magnetic field from a Bloch wall in a ferrite garnet film (FGF) is used to manipulate the vortices. High-resolution magneto-optical imaging enables real-time observation of the vortex positions using the Faraday effect in the same FGF. Depending on the thickness of the sample, the vortices are either swept away or merely bent with the Bloch wall.
Magnetoelastic contribution in domain wall propagation of micrometric wires.
Zhukov, A; Blanco, J M; Ipatov, M; Zhukova, V
2012-09-01
We report on studies of domain wall propagation of magnetically-bistable Fe-Co-rich microwires paying attention on the effect of applied and internal stresses. We measured magnetic domain propagation in various magnetic Fe-Co-rich amorphous microwires with metallic nucleus diameters (from 2.8 microm to 18 microm) using Sixtus Tonks-like experiments. We found that application of applied stresses and increasing of internal stresses result in decreasing of domain wall (DW) velocity. We assume that in order to achieve higher DW propagation velocity at the same magnetic field and enhanced DW mobility, special attention should be paid to the decrease of magnetoelastic energy.
Complex oxide ferroelectrics: Electrostatic doping by domain walls
Maksymovych, Petro
2015-06-19
Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacementsmore » changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.« less
Domain walls in supersymmetric QCD: The taming of the zoo
Binosi, Daniele; ter Veldhuis, Tonnis
2001-04-15
We provide a unified picture of the domain wall spectrum in supersymmetric QCD with N{sub c} colors and N{sub f} flavors of quarks in the (anti) fundamental representation. Within the framework of the Veneziano-Yankielowicz-Taylor effective Lagrangian, we consider domain walls connecting chiral symmetry breaking vacua, and we take the quark masses to be degenerate. For N{sub f}/N{sub c}<1/2, there is one BPS saturated domain wall for any value of the quark mass m. For 1/2{<=}N{sub f}/N{sub c}<1 there are two critical masses m{sub *} and m{sub **} which depend on the number of colors and flavors only through the ratio N{sub f}/N{sub c}. If m
Voltage-controlled domain wall traps in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Bauer, Uwe; Emori, Satoru; Beach, Geoffrey S. D.
2013-06-01
Electrical control of magnetism has the potential to bring about revolutionary new spintronic devices, many of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires. Recently, it has been shown that voltage-induced charge accumulation at a metal-oxide interface can influence domain wall motion in ultrathin metallic ferromagnets, but the effects have been relatively modest and limited to the slow, thermally activated regime. Here we show that a voltage can generate non-volatile switching of magnetic properties at the nanoscale by modulating interfacial chemistry rather than charge density. Using a solid-state ionic conductor as a gate dielectric, we generate unprecedentedly strong voltage-controlled domain wall traps that function as non-volatile, electrically programmable and switchable pinning sites. Pinning strengths of at least 650 Oe can be readily achieved, enough to bring to a standstill domain walls travelling at speeds of at least ~20 m s-1. We exploit this new magneto-ionic effect to demonstrate a prototype non-volatile memory device in which voltage-controlled domain wall traps facilitate electrical bit selection in a magnetic nanowire register.
Geometrical control of pure spin current induced domain wall depinning
NASA Astrophysics Data System (ADS)
Pfeiffer, A.; Reeve, R. M.; Voto, M.; Savero-Torres, W.; Richter, N.; Vila, L.; Attané, J. P.; Lopez-Diaz, L.; Kläui, Mathias
2017-03-01
We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of 6\\centerdot {{10}11} A m-2, which is attributed to the optimal control of the position of the domain wall.
Localization of vector field on dynamical domain wall
NASA Astrophysics Data System (ADS)
Higuchi, Masafumi; Nojiri, Shin'ichi
2017-03-01
In the previous works (arxiv:arXiv:1202.5375 and arxiv:arXiv:1402.1346), the dynamical domain wall, where the four dimensional FRW universe is embedded in the five dimensional space-time, has been realized by using two scalar fields. In this paper, we consider the localization of vector field in three formulations. The first formulation was investigated in the previous paper (arxiv:arXiv:1510.01099) for the U (1) gauge field. In the second formulation, we investigate the Dvali-Shifman mechanism (arxiv:arXiv:hep-th/9612128), where the non-abelian gauge field is confined in the bulk but the gauge symmetry is spontaneously broken on the domain wall. In the third formulation, we investigate the Kaluza-Klein modes coming from the five dimensional graviton. In the Randall-Sundrum model, the graviton was localized on the brane. We show that the (5 , μ) components (μ = 0 , 1 , 2 , 3) of the graviton are also localized on the domain wall and can be regarded as the vector field on the domain wall. There are, however, some corrections coming from the bulk extra dimension if the domain wall universe is expanding.
Domain walls and ferroelectric reversal in corundum derivatives
NASA Astrophysics Data System (ADS)
Ye, Meng; Vanderbilt, David
2017-01-01
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.
Majorana Fermion Rides on a Magnetic Domain Wall
NASA Astrophysics Data System (ADS)
Kim, Se Kwon; Tewari, Sumanta; Tserkovnyak, Yaroslav
Owing to the recent progress on endowing the electronic structure of magnetic nanowires with topological properties, the associated topological solitons in the magnetic texture--magnetic domain walls--appear as very natural hosts for exotic electronic excitations. Here, we propose to use the magnetic domain walls to engender Majorana fermions, which has several notable advantages compared to the existing approaches. First of all, the local tunneling density-of-states anomaly associated with the Majorana zero mode bound to a smooth magnetic soliton is immune to most of parasitic artifacts associated with the abrupt physical ends of a wire, which mar the existing experimental probes. Second, a viable route to move and braid Majorana fermions is offered by domain-wall motion. In particular, we envision the recently demonstrated heat-current induced motion of domain walls in insulating ferromagnets as a promising tool for nonintrusive displacement of Majorana modes. This leads us to propose a feasible scheme for braiding domain walls within a magnetic nanowire network, which manifests the nob-Abelian exchange statistics within the Majorana subspace. This work has been supported in part by the U.S. DOE-BES, FAME, and AFOSR grants.
Voltage-controlled domain wall traps in ferromagnetic nanowires.
Bauer, Uwe; Emori, Satoru; Beach, Geoffrey S D
2013-06-01
Electrical control of magnetism has the potential to bring about revolutionary new spintronic devices, many of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires. Recently, it has been shown that voltage-induced charge accumulation at a metal-oxide interface can influence domain wall motion in ultrathin metallic ferromagnets, but the effects have been relatively modest and limited to the slow, thermally activated regime. Here we show that a voltage can generate non-volatile switching of magnetic properties at the nanoscale by modulating interfacial chemistry rather than charge density. Using a solid-state ionic conductor as a gate dielectric, we generate unprecedentedly strong voltage-controlled domain wall traps that function as non-volatile, electrically programmable and switchable pinning sites. Pinning strengths of at least 650 Oe can be readily achieved, enough to bring to a standstill domain walls travelling at speeds of at least ~20 m s(-1). We exploit this new magneto-ionic effect to demonstrate a prototype non-volatile memory device in which voltage-controlled domain wall traps facilitate electrical bit selection in a magnetic nanowire register.
Domain conservation in several volvocalean cell wall proteins.
Woessner, J P; Molendijk, A J; van Egmond, P; Klis, F M; Goodenough, U W; Haring, M A
1994-11-01
Based on our previous work demonstrating that (SerPro)x epitopes are common to extensin-like cell wall proteins in Chlamydomonas' reinhardtii, we looked for similar proteins in the distantly related species C. eugametos. Using a polyclonal antiserum against a (SerPro)10 oligopeptide, we found distinct sets of stage-specific polypeptides immunoprecipitated from in vitro translations of C. eugametos RNA. Screening of a C. eugametos cDNA expression library with the antiserum led to the isolation of a cDNA (WP6) encoding a (SerPro)x-rich multidomain wall protein. Analysis of a similarly selected cDNA (VSP-3) from a C. reinhardtii cDNA expression library revealed that it also coded for a (SerPro)x-rich multidomain wall protein. The C-terminal rod domains of VSP-3 and WP6 are highly homologous, while the N-terminal domains are dissimilar; however, the N-terminal domain of VSP-3 is homologous to the globular domain of a cell wall protein from Volvox carteri. Exon shuffling might be responsible for this example of domain conservation over 350 million years of volvocalean cell wall protein evolution.
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Belashchenko, K. D.; Tchernyshyov, O.; Kovalev, Alexey A.; ...
2016-03-30
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying amore » small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.« less
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Belashchenko, K. D.; Tchernyshyov, O.; Kovalev, Alexey A.; Tretiakov, O. A.
2016-03-30
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr_{2}O_{3} is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr_{2}O_{3}, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr_{2}O_{3}. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
The noise of many needles: Jerky domain wall propagation in PbZrO3 and LaAlO3
NASA Astrophysics Data System (ADS)
Puchberger, S.; Soprunyuk, V.; Schranz, W.; Tröster, A.; Roleder, K.; Majchrowski, A.; Carpenter, M. A.; Salje, E. K. H.
2017-04-01
Measurements of the sample length of PbZrO3 and LaAlO3 under slowly increasing force (3-30 mN/min) yield a superposition of a continuous decrease interrupted by discontinuous drops. This strain intermittency is induced by the jerky movement of ferroelastic domain walls through avalanches near the depinning threshold. At temperatures close to the domain freezing regime, the distributions of the calculated squared drop velocity maxima N (υm2) follow a power law behaviour with exponents ɛ =1.6 ±0.2 . This is in good agreement with the energy exponent ɛ =1.8 ±0.2 recently found for the movement of a single needle tip in LaAlO3 [R. J. Harrison and E. K. H. Salje, Appl. Phys. Lett. 97, 021907 (2010)]. With increasing temperature, N (υm2) changes from a power law at low temperatures to an exponential law at elevated temperatures, indicating that thermal fluctuations increasingly enable domain wall segments to unpin even when the driving force is smaller than the corresponding barrier.
Local Domain-Wall Velocity Engineering via Tailored Potential Landscapes in Ferromagnetic Rings
NASA Astrophysics Data System (ADS)
Richter, Kornel; Krone, Andrea; Mawass, Mohamad-Assaad; Krüger, Benjamin; Weigand, Markus; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2016-02-01
We report the local control of the domain-wall velocity by tailoring the domain-wall potential landscape via local variations of a curved ring geometry. Employing time-resolved scanning-transmission x-ray microscopy, we dynamically image the motion of domain walls in rotating magnetic fields and quantify the contribution of the spatially varying potential to the domain-wall dynamics. We explain our experimentally obtained angular dependences of domain-wall velocities by the interplay between long-range forces arising from the Zeeman interaction of domain walls with the external magnetic field with local forces arising from variations of domain-wall energy due to a varying ring width. The interplay of these forces leads to distortion-free wall motion, and we use the engineered domain-wall potential landscape for spatial synchronization of domain-wall velocities in ferromagnetic rings, which are both a key prerequisite for the implementation of domain-wall-based devices.
Domain Wall Motion in Synthetic Co2Si Nanowires
Liu, Gang; Lin, Yung-Chen; Liao, Lei; Liu, Lixin; Chen, Yu; Liu, Yuan; Weiss, Nathan O.; Zhou, Hailong; Huang, Yu; Duan, Xiangfeng
2012-01-01
We report the synthesis of single crystalline Co2Si nanowires, and electrical transport studies of single Co2Si nanowire devices at low temperature. The butterfly-shaped magnetoresistance shows interesting ferromagnetic features including negative magnetoresistance, hysteretic switch fields and step-wise drops in magnetoresistance. The non-smooth step-wise magnetoresistance response is attributed to magnetic domain wall pinning and de-pinning motion in the Co2Si nanowires probably at crystal defects or morphology defects. The temperature dependence of the domain wall de-pinning field is observed and is described by a model based on thermally assisted domain wall de-pinning over a single energy barrier. PMID:22469009
Magnetic domain walls as reconfigurable spin-wave nanochannels
NASA Astrophysics Data System (ADS)
Wagner, K.; Kákay, A.; Schultheiss, K.; Henschke, A.; Sebastian, T.; Schultheiss, H.
2016-05-01
In the research field of magnonics, it is envisaged that spin waves will be used as information carriers, promoting operation based on their wave properties. However, the field still faces major challenges. To become fully competitive, novel schemes for energy-efficient control of spin-wave propagation in two dimensions have to be realized on much smaller length scales than used before. In this Letter, we address these challenges with the experimental realization of a novel approach to guide spin waves in reconfigurable, nano-sized magnonic waveguides. For this purpose, we make use of two inherent characteristics of magnetism: the non-volatility of magnetic remanence states and the nanometre dimensions of domain walls formed within these magnetic configurations. We present the experimental observation and micromagnetic simulations of spin-wave propagation inside nano-sized domain walls and realize a first step towards a reconfigurable domain-wall-based magnonic nanocircuitry.
A Review of Gravitational Waves from Cosmic Domain Walls
NASA Astrophysics Data System (ADS)
Saikawa, Ken'ichi
2017-05-01
In this contribution, we discuss the cosmological scenario where unstable domain walls are formed in the early universe and their late-time annihilation produces a significant amount of gravitational waves. After describing cosmological constraints on long-lived domain walls, we estimate the typical amplitude and frequency of gravitational waves observed today. We also review possible extensions of the standard model of particle physics that predict the formation of unstable domain walls and can be probed by observation of relic gravitational waves. It is shown that recent results of pulser timing arrays and direct detection experiments partially exclude the relevant parameter space, and that a much wider parameter space can be covered by the next generation of gravitational wave observatories.
Domain walls and gravitational waves in the Standard Model
NASA Astrophysics Data System (ADS)
Krajewski, Tomasz; Lalak, Zygmunt; Lewicki, Marek; Olszewski, Paweł
2016-12-01
We study domain walls which can be created in the Standard Model under the assumption that it is valid up to very high energy scales. We focus on domain walls interpolating between the physical electroweak vacuum and the global minimum appearing at very high field strengths. The creation of the network which ends up in the electroweak vacuum percolating through the Universe is not as difficult to obtain as one may expect, although it requires certain tuning of initial conditions. Our numerical simulations confirm that such domain walls would swiftly decay and thus cannot dominate the Universe. We discuss the possibility of detection of gravitational waves produced in this scenario. We have found that for the standard cosmology the energy density of these gravitational waves is too small to be observed in present and planned detectors.
Current-driven periodic domain wall creation in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Sitte, Matthias; Everschor-Sitte, Karin; Valet, Thierry; Rodrigues, Davi R.; Sinova, Jairo; Abanov, Ar.
2016-08-01
We predict the electrical generation and injection of domain walls into a ferromagnetic nanowire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current jc domain walls are injected into the nanowire with a period T ˜(j-jc) -1 /2 . Importantly, domain walls can be produced periodically even in a simple exchange ferromagnet with uniaxial anisotropy, without requiring any standard "twisting" interaction such as Dzyaloshinskii-Moriya or dipole-dipole interactions. We show analytically that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian. Finally we give a specific proposal for an experimental realization.
Magnetic domain walls as reconfigurable spin-wave nanochannels.
Wagner, K; Kákay, A; Schultheiss, K; Henschke, A; Sebastian, T; Schultheiss, H
2016-05-01
In the research field of magnonics, it is envisaged that spin waves will be used as information carriers, promoting operation based on their wave properties. However, the field still faces major challenges. To become fully competitive, novel schemes for energy-efficient control of spin-wave propagation in two dimensions have to be realized on much smaller length scales than used before. In this Letter, we address these challenges with the experimental realization of a novel approach to guide spin waves in reconfigurable, nano-sized magnonic waveguides. For this purpose, we make use of two inherent characteristics of magnetism: the non-volatility of magnetic remanence states and the nanometre dimensions of domain walls formed within these magnetic configurations. We present the experimental observation and micromagnetic simulations of spin-wave propagation inside nano-sized domain walls and realize a first step towards a reconfigurable domain-wall-based magnonic nanocircuitry.
Switchable spin-current source controlled by magnetic domain walls.
Savero Torres, W; Laczkowski, P; Nguyen, V D; Rojas Sanchez, J C; Vila, L; Marty, A; Jamet, M; Attané, J P
2014-07-09
Using nonlocal spin injection, spin-orbit coupling, or spincaloritronic effects, the manipulation of pure spin currents in nanostructures underlies the development of new spintronic devices. Here, we demonstrate the possibility to create switchable pure spin current sources, controlled by magnetic domain walls. When the domain wall is located at a given point of the magnetic circuit, a pure spin current is injected into a nonmagnetic wire. Using the reciprocal measurement configuration, we demonstrate that the proposed device can also be used as a pure spin current detector. Thanks to its simple geometry, this device can be easily implemented in spintronics applications; in particular, a single current source can be used both to induce the domain wall motion and to generate the spin signal.
Epitaxial Engineering of Domain Walls and Distortions in Ferrite Heterostructures
NASA Astrophysics Data System (ADS)
Mundy, Julia
The defining feature of ferroics is the ability of an external stimulus--electric field, magnetic field, or stress--to move domain walls. These topological defects and their motion enables many useful attributes, e.g., memories that can be reversibly written between stable states as well as enhanced conductivity, permittivity, permeability, and piezoelectricity. Although methods are known to drastically increase their density, the placement of domain walls with atomic precision has until now evaded control. Here we engineer the location of domain walls with monolayer precision and exploit this ability to create a novel multiferroic in which ferroelectricity enhances magnetism at all relevant length scales. Starting with hexagonal LuFeO3, a geometric ferroelectric with the greatest known planar rumpling, we introduce individual extra monolayers of FeO during growth to construct formula-unit-thick syntactic layers of ferrimagnetic LuFe2O4 within the LuFeO3 matrix, i.e., (LuFeO3)m /(LuFe2O4)1 superlattices. The severe rumpling imposed by the neighboring LuFeO3 drives the ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state and reduces the LuFe2O4 spin frustration. This increases the magnetic transition temperature significantly--to 281 K for the (LuFeO3)9 /(LuFe2O4)1 superlattice. Moreover, LuFeO3 can form charged ferroelectric domain walls, which we align to the LuFe2O4 bilayers with monolayer precision. Charge transfers to these domain walls to alleviate the otherwise electrostatically unstable polarization arrangement, further boosting the magnetic moment. Our results demonstrate the utility of combining ferroics at the atomic-layer level with attention to domain walls, geometric frustration and polarization doping to create multiferroics by design.
Thick domain walls in AdS black hole spacetimes
Moderski, Rafal; Rogatko, Marek
2006-08-15
Equations of motion for a real self-gravitating scalar field in the background of a black hole with negative cosmological constant were solved numerically. We obtain a sequence of static axisymmetric solutions representing thick domain wall cosmological black hole systems, depending on the mass of black hole, cosmological parameter and the parameter binding black hole mass with the width of the domain wall. For the case of extremal cosmological black hole the expulsion of scalar field from the black hole strongly depends on it.
Runaway domain wall and space-time varying α
Chiba, Takeshi; Yamaguchi, Masahide E-mail: gucci@phys.titech.ac.jp
2011-03-01
Recently spatial as well as temporal variations of the fine structure constant α have been reported. We show that a ''runaway domain wall{sup ,} which arises for the scalar field potential without minima, can account for such variations simultaneously. The time variation is induced by a runaway potential and the spatial variation is induced by the formation of a domain wall. The model is consistent with the current cosmological data and can be tested by the future experiments to test the equivalence principle.
Electric polarization of magnetic domain walls in magnetoelectrics.
Lobzenko, I P; Goncharov, P P; Ter-Oganessian, N V
2015-06-24
Two prominent magnetoelectrics MnWO4 and CuO possess low-temperature commensurate paraelectric magnetically ordered phase. Here using Monte Carlo simulations we show that the walls between the domains of this phase are ferroelectric with the same electric polarization direction and value as those in the magnetoelectric phases of these compounds. We also suggest that experimental observation of electric polarization of domain walls in MnWO4 should help to determine the macroscopic interactions responsible for its magnetoelectric properties.
Light wave propagation through a dilaton-Maxwell domain wall
NASA Astrophysics Data System (ADS)
Morris, J. R.; Schulze-Halberg, A.
2015-10-01
We consider the propagation of electromagnetic waves through a dilaton-Maxwell domain wall of the type introduced by Gibbons and Wells [G. W. Gibbons and C. G. Wells, Classical and Quantum Gravity 11, 2499 (1994)]. It is found that if such a wall exists within our observable Universe, it would be absurdly thick, or else have a magnetic field in its core which is much stronger than observed intergalactic fields. We conclude that it is highly improbable that any such wall is physically realized.
Charged domain walls under super-band-gap illumination
NASA Astrophysics Data System (ADS)
Sturman, B.; Podivilov, E.
2017-03-01
Charged domain walls (CDWs), which possess metallic-type conductivity and can be created and controlled in the bulk of wide-band-gap ferroelectrics, attract nowadays a strong research interest. The most advanced method for production of stable CDWs involves weak super-band-gap illumination. Here, we investigate theoretically the impact of this illumination on the major wall properties including the energy and the spatial profiles of the polarization, of the electrostatic potential, and of the compensating charge carriers. The key material parameters determining the effect of light are the zero-field polarization strength, the dielectric permittivity, and the trap concentration. The main predictions are substantial reduction of the wall energies and decrease of the electric wall potential under light. These features facilitate creation of dense CDWs patterns and accessibility of the metallic-type wall conductivity.
Topological Valley Transport at Bilayer Graphene Domain Walls
2015-04-22
control and transport measurements. Here we use a new approach to image in situ AB-BA domain walls in exfo- liated (that is, prepared from graphite using...time. Few-layer graphene was mechanically exfoliated on 280-nm-thick SiO2/Si substrates, and the layer thickness is determined using optical...observed in infrared nanoscopy images (see Methods for details). To confirm that the bright lineswithin the bilayer graphene are layer stacking domain
Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate
Nataf, G. F.; Grysan, P.; Guennou, M.; Kreisel, J.; Martinotti, D.; Rountree, C. L.; Mathieu, C.; Barrett, N.
2016-01-01
The understanding of domain structures, specifically domain walls, currently attracts a significant attention in the field of (multi)-ferroic materials. In this article, we analyze contrast formation in full field electron microscopy applied to domains and domain walls in the uniaxial ferroelectric lithium niobate, which presents a large 3.8 eV band gap and for which conductive domain walls have been reported. We show that the transition from Mirror Electron Microscopy (MEM – electrons reflected) to Low Energy Electron Microscopy (LEEM – electrons backscattered) gives rise to a robust contrast between domains with upwards (Pup) and downwards (Pdown) polarization, and provides a measure of the difference in surface potential between the domains. We demonstrate that out-of-focus conditions of imaging produce contrast inversion, due to image distortion induced by charged surfaces, and also carry information on the polarization direction in the domains. Finally, we show that the intensity profile at domain walls provides experimental evidence for a local stray, lateral electric field. PMID:27608605
Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate
NASA Astrophysics Data System (ADS)
Nataf, G. F.; Grysan, P.; Guennou, M.; Kreisel, J.; Martinotti, D.; Rountree, C. L.; Mathieu, C.; Barrett, N.
2016-09-01
The understanding of domain structures, specifically domain walls, currently attracts a significant attention in the field of (multi)-ferroic materials. In this article, we analyze contrast formation in full field electron microscopy applied to domains and domain walls in the uniaxial ferroelectric lithium niobate, which presents a large 3.8 eV band gap and for which conductive domain walls have been reported. We show that the transition from Mirror Electron Microscopy (MEM - electrons reflected) to Low Energy Electron Microscopy (LEEM - electrons backscattered) gives rise to a robust contrast between domains with upwards (Pup) and downwards (Pdown) polarization, and provides a measure of the difference in surface potential between the domains. We demonstrate that out-of-focus conditions of imaging produce contrast inversion, due to image distortion induced by charged surfaces, and also carry information on the polarization direction in the domains. Finally, we show that the intensity profile at domain walls provides experimental evidence for a local stray, lateral electric field.
Angular Dependence of Domain Wall Resistivity in Artificial Magnetic Domain Structures
NASA Astrophysics Data System (ADS)
Aziz, A.; Bending, S. J.; Roberts, H. G.; Crampin, S.; Heard, P. J.; Marrows, C. H.
2006-11-01
We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, ρ↓/ρ↑˜5.5, in good agreement with thin film band structure calculations.
Soft acoustic mode in ferroelastic BiVO4
NASA Astrophysics Data System (ADS)
Benyuan, Gu; Copic, M.; Cummins, H. Z.
1981-10-01
Brillouin scattering spectroscopy of bismuth vanadate has revealed a soft acoustic mode which is characteristic of a proper ferroelastic phase transition. Raman scattering has revealed an optic mode which is doubly degenerate Eg in the paraelastic phase and splits into two Bg modes in the ferroelastic phase. The temperature dependence of the splitting is also consistent with a proper ferroelastic transition.
Textural domain walls in superfluid 3He-B
NASA Astrophysics Data System (ADS)
Mizushima, Takeshi
Owing to the richness of symmetry, the superfluid 3He serves as a rich repository of topological quantum phenomena. This includes the emergence of surface Majorana fermions and their quantum mass acquisition at the topological critical point. Furthermore, the marriage of the prototype topological superfluid with nanofabrication techniques brings about a rich variety of spontaneous symmetry breaking, such as the formation of the stripe order and nontrivial domain walls. In this work, we examine the possible formation of textural domain walls in the superfluid 3He-B confined to a thin slab with a sub-micron thickness. When an applied magnetic field is much higher than the dipolar field, two nearly degenerate ground states appear, which are characterized by the Ising order associated with the spontaneous breaking of a magnetic order-two symmetry, lcirc;z = + 1 and - 1 . We here discuss the structure of the textural domain wall formed by the spatial modulation of the Ising order, such as low-lying quasiparticle excitations and spontaneous spin current. We also report bosonic modes bound to the textural domain wall.
Domain Walls in the Coupled Gross-Pitaevskii Equations
NASA Astrophysics Data System (ADS)
Alama, Stan; Bronsard, Lia; Contreras, Andres; Pelinovsky, Dmitry E.
2014-09-01
A thorough study of domain wall solutions in coupled Gross-Pitaevskii equations on the real line is carried out including existence of these solutions; their spectral and nonlinear stability; their persistence and stability under a small localized potential. The proof of existence is variational and is presented in a general framework: we show that the domain wall solutions are energy minimizers within a class of vector-valued functions with nontrivial conditions at infinity. The admissible energy functionals include those corresponding to coupled Gross-Pitaevskii equations, arising in modeling of Bose-Einstein condensates. The results on spectral and nonlinear stability follow from properties of the linearized operator about the domain wall. The methods apply to many systems of interest and integrability is not germane to our analysis. Finally, sufficient conditions for persistence and stability of domain wall solutions are obtained to show that stable pinning occurs near maxima of the potential, thus giving rigorous justification to earlier results in the physics literature.
Domain Walls in the Coupled Gross-Pitaevskii Equations
NASA Astrophysics Data System (ADS)
Alama, Stan; Bronsard, Lia; Contreras, Andres; Pelinovsky, Dmitry E.
2015-02-01
A thorough study of domain wall solutions in coupled Gross-Pitaevskii equations on the real line is carried out including existence of these solutions; their spectral and nonlinear stability; their persistence and stability under a small localized potential. The proof of existence is variational and is presented in a general framework: we show that the domain wall solutions are energy minimizers within a class of vector-valued functions with nontrivial conditions at infinity. The admissible energy functionals include those corresponding to coupled Gross-Pitaevskii equations, arising in modeling of Bose-Einstein condensates. The results on spectral and nonlinear stability follow from properties of the linearized operator about the domain wall. The methods apply to many systems of interest and integrability is not germane to our analysis. Finally, sufficient conditions for persistence and stability of domain wall solutions are obtained to show that stable pinning occurs near maxima of the potential, thus giving rigorous justification to earlier results in the physics literature.
Acoustic emission, domain walls and hysteresis in YIG
NASA Astrophysics Data System (ADS)
Guyot, M.; Merceron, T.; Cagan, V.
1987-02-01
The acoustic emission (AE) is experimentally shown to vary along the hysteresis loop of YIG samples with the creation and/or annihilation of domain walls. The AE and the Barkhausen activities are in anticorrelation. AE and hysteresis losses are proportional, which could mean that AE is the fundamental step to convert magnetic energy into heat.
Subatomic movements of a domain wall in the Peierls potential
NASA Astrophysics Data System (ADS)
Novoselov, K. S.; Geim, A. K.; Dubonos, S. V.; Hill, E. W.; Grigorieva, I. V.
2003-12-01
The discrete nature of crystal lattices plays a role in virtually every material property. But it is only when the size of entities hosted by a crystal becomes comparable to the lattice period-as occurs for dislocations, vortices in superconductors and domain walls-that this discreteness is manifest explicitly. The associated phenomena are usually described in terms of a background Peierls `atomic washboard' energy potential, which was first introduced for the case of dislocation motion in the 1940s. This concept has subsequently been invoked in many situations to describe certain features in the bulk behaviour of materials, but has to date eluded direct detection and experimental scrutiny at a microscopic level. Here we report observations of the motion of a single magnetic domain wall at the scale of the individual peaks and troughs of the atomic energy landscape. Our experiments reveal that domain walls can become trapped between crystalline planes, and that they propagate by distinct jumps that match the lattice periodicity. The jumps between valleys are found to involve unusual dynamics that shed light on the microscopic processes underlying domain-wall propagation. Such observations offer a means for probing experimentally the physics of topological defects in discrete lattices-a field rich in phenomena that have been subject to extensive theoretical study.
Subatomic movements of a domain wall in the Peierls potential.
Novoselov, K S; Geim, A K; Dubonos, S V; Hill, E W; Grigorieva, I V
2003-12-18
The discrete nature of crystal lattices plays a role in virtually every material property. But it is only when the size of entities hosted by a crystal becomes comparable to the lattice period--as occurs for dislocations, vortices in superconductors and domain walls--that this discreteness is manifest explicitly. The associated phenomena are usually described in terms of a background Peierls 'atomic washboard' energy potential, which was first introduced for the case of dislocation motion in the 1940s. This concept has subsequently been invoked in many situations to describe certain features in the bulk behaviour of materials, but has to date eluded direct detection and experimental scrutiny at a microscopic level. Here we report observations of the motion of a single magnetic domain wall at the scale of the individual peaks and troughs of the atomic energy landscape. Our experiments reveal that domain walls can become trapped between crystalline planes, and that they propagate by distinct jumps that match the lattice periodicity. The jumps between valleys are found to involve unusual dynamics that shed light on the microscopic processes underlying domain-wall propagation. Such observations offer a means for probing experimentally the physics of topological defects in discrete lattices--a field rich in phenomena that have been subject to extensive theoretical study.
Domain wall fermions and the η-invariant
NASA Astrophysics Data System (ADS)
Kaplan, David B.; Schmaltz, Martin
1996-02-01
We extend work by Callan and Harvey and show how the phase of the chiral fermion determinant in four dimensions is reproduced by zero modes bound to a domain wall in five dimensions. The analysis could shed light on the applicability of zero mode fermions and the vacuum overlap formulation of Narayanan and Neuberger for chiral gauge theories on the lattice.
Domain wall assisted GMR head with spin-Hall effect
Arun, R.; Sabareesan, P.; Daniel, M.
2016-05-06
We theoretically study the dynamics of a field induced domain wall in the Py/Pt bi-layer structure in the presence of spin-Hall effect (SHE) by solving the Landau-Lifshitz-Gilbert (LLG) equation along with the adiabatic, nonadiabatic and SHE spin-transfer torques (STTs). It is observed that a weak magnetic field moves the domain wall with high velocity in the presence of SHE and the direction of the velocity is changed by changing the direction of the weak field. The numerical results show that the magnetization of the ferromagnetic layer can be reversed quickly through domain wall motion by changing the direction of a weak external field in the presence of SHE while the direction of current is fixed. The SHE reduces the magnetization reversal time of 1000 nm length strip by 14.7 ns. This study is extended to model a domain wall based GMR (Giant Magnetoresistance) read head with SHE.
Barkhausen avalanches in anisotropic ferromagnets with 180 degrees domain walls
Tadic; Nowak
2000-04-01
We show that Barkhausen noise in two-dimensional disordered ferromagnets with extended domain walls is characterized by the avalanche size exponent tau(s)=1.54 at low disorder. With increasing disorder the characteristic domain size is reduced relative to the system size due to nucleation of new domains and a dynamic phase transition occurs to the scaling behavior with tau(s)=1.30. The exponents decrease at finite driving rate. The results agree with recently observed behavior in amorphous Metglas and Fe-Co-B ribbons when the applied anisotropic stress is varied.
NASA Astrophysics Data System (ADS)
Shevchenko, Andriy; Barabash, Maksym
2016-10-01
It was established that at low temperatures, quantum oscillations of a pair of interacting nanoscale structural inhomogeneities (vertical Bloch lines) occur in a domain wall of stripe domain in uniaxial ferromagnetic film. The effective mass of vertical Bloch line and conditions for this effect were determined. The effect can be used in the hybrid storage devices bit + q-bit.
Matter antimatter domains: A possible solution to the CP domain wall problem in the early universe
NASA Technical Reports Server (NTRS)
Mohanty, A. K.; Stecker, F. W.
1984-01-01
An SU(5) grand unified theory model is used to show how the degeneracy between vacua with different spontaneously broken charge parity can be dynamically lifted by a condensate of heavy fermion pairs. This drives a phase transition to a unique vacuum state with definite charge parity. The transition eliminates the domain walls in a matter antimatter symmetric domain cosmology.
Domain walls in the quantum transverse Ising model
NASA Astrophysics Data System (ADS)
Henkel, Malte; Harris, A. Brooks; Cieplak, Marek
1995-08-01
We discuss several problems concerning domain walls in the spin-S Ising model at zero temeprature in a magnetic field, H/(2S), applied in the x direction. Some results are also given for the planar (y-z) model in a transverse field. We treat the quantum problem in one dimension by perturbation theory at small H and numerically over a large range of H. We obtain the spin-density profile by fixing the spins at opposite ends of the chain to have opposite signs of Sz. One dimensional is special in that there the quantum width of the wall is proportional to the size L of the system. We also study the quantitative features of the ``particle'' band which extends up to energies of order H above the ground state. Except for the planar limit, this particle band is well separated from excitations having energy J/S involving creation of more walls. At large S this particle band develops energy gaps and the lowest subband has tunnel splittings of order H21-2S. This scale of of energy gives rise to anomalous scaling with respect to (a) finite size, (b) temperature, or (c) random potentials. The intrinsic width of the domain wall and the pinning energy are also defined and calculated in certain limiting cases. The general conclusion is that quantum effects prevent the wall from being sharp and in higher dimension would prevent sudden excursions in the configuration of the wall.
Complex oxide ferroelectrics: Electrostatic doping by domain walls
Maksymovych, Petro
2015-06-19
Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO_{3} and SrTiO_{3} supports a 2D electron gas1 with high mobility of >1,000 cm^{2} V^{-1} s^{-1} (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO_{3} down to the nanoscale.
Finite elements micromagnetic simulation of domain wall resonance
NASA Astrophysics Data System (ADS)
Ntallis, N.; Efthimiadis, K. G.
2016-09-01
In this work, the finite elements method is used to simulate, by micromagnetic modeling, the motion of a magnetic domain wall under the action of an oscillating external field. In the micromagnetic magnetization dynamics, a nonzero inertia tensor is used, resulting in a partial differential equation also containing the second time derivative of the magnetization. The model is investigated in all of its parameters, and it is validated by solving the NIST problem μMag#4. All the simulations were carried out on spherical particles of an uniaxial magnetocrystalline anisotropy, and they started with the nucleation and the growth of the magnetic domains. Under the influence of an oscillating external field, the susceptibility spectra are calculated for different magnetic parameters. For low damping values in the susceptibility spectra, beyond the contribution of the coherent oscillating domain wall, multiple resonances are also found.
Domain wall order and motion in Mn3O4
NASA Astrophysics Data System (ADS)
Thaler, Alexander; Zakjevskii, Alexander; Nguyen, Brian; Gim, Yewon; Aczel, Adam; Debeer-Schmitt, Lisa; Cooper, S. Lance; MacDougall, Gregory
Mn3O4 is an orbitally ordered, magnetically frustrated spinel with strong spin-lattice coupling, which exhibits a series of low temperature magnetic and structural transitions. Transverse field μSR has shown that ordered and disordered volumes coexist within this material, while MFM measurements have further shown that the magnetic domain walls themselves order in specific crystallographic directions, with a typical length scale of 100's of nm. In order to directly study these phenomena, we have performed small angle neutron scattering (SANS) measurements at both zero and applied magnetic field. We will present the results of these measurements and discuss what they show as far as the formation of domains, as well as the motion of the domain walls. We will also discuss the effects of internal disorder on the behavior of the material. This work was sponsored by the National Science Foundation, under Grant Number DMR-1455264.
Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion
NASA Astrophysics Data System (ADS)
Tomasello, R.; Puliafito, V.; Martinez, E.; Manchon, A.; Ricci, M.; Carpentieri, M.; Finocchio, G.
2017-08-01
A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that, to stabilize a SAF skyrmion, the Dzyaloshinskii-Moriya interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmions and SAF Néel domain walls are of the same order and can reach values larger than 1200 m s-1 if a spin-orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets. The presence of disordered anisotropy in the form of randomly distributed grains introduces a threshold current for both SAF skyrmions and SAF domain walls motions.
Non-volatile polarization switch of magnetic domain wall velocity
Huang, Z.; Stolichnov, I.; Setter, N.; Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L.; Auffret, S.; Gaudin, G.
2015-12-21
Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.
Primordial black hole and wormhole formation by domain walls
NASA Astrophysics Data System (ADS)
Deng, Heling; Garriga, Jaume; Vilenkin, Alexander
2017-04-01
In theories with a broken discrete symmetry, Hubble sized spherical domain walls may spontaneously nucleate during inflation. These objects are subsequently stretched by the inflationary expansion, resulting in a broad distribution of sizes. The fate of the walls after inflation depends on their radius. Walls smaller than a critical radius fall within the cosmological horizon early on and collapse due to their own tension, forming ordinary black holes. But if a wall is large enough, its repulsive gravitational field becomes dominant much before the wall can fall within the cosmological horizon. In this ``supercritical'' case, a wormhole throat develops, connecting the ambient exterior FRW universe with an interior baby universe, where the exponential growth of the wall radius takes place. The wormhole pinches off in a time-scale comparable to its light-crossing time, and black holes are formed at its two mouths. As discussed in previous work, the resulting black hole population has a wide distribution of masses and can have significant astrophysical effects. The mechanism of black hole formation has been previously studied for a dust-dominated universe. Here we investigate the case of a radiation-dominated universe, which is more relevant cosmologically, by using numerical simulations in order to find the initial mass of a black hole as a function of the wall size at the end of inflation. For large supercritical domain walls, this mass nearly saturates the upper bound according to which the black hole cannot be larger than the cosmological horizon. We also find that the subsequent accretion of radiation satisfies a scaling relation, resulting in a mass increase by about a factor of 2.
Rashba Torque Driven Domain Wall Motion in Magnetic Helices.
Pylypovskyi, Oleksandr V; Sheka, Denis D; Kravchuk, Volodymyr P; Yershov, Kostiantyn V; Makarov, Denys; Gaididei, Yuri
2016-03-24
Manipulation of the domain wall propagation in magnetic wires is a key practical task for a number of devices including racetrack memory and magnetic logic. Recently, curvilinear effects emerged as an efficient mean to impact substantially the statics and dynamics of magnetic textures. Here, we demonstrate that the curvilinear form of the exchange interaction of a magnetic helix results in an effective anisotropy term and Dzyaloshinskii-Moriya interaction with a complete set of Lifshitz invariants for a one-dimensional system. In contrast to their planar counterparts, the geometrically induced modifications of the static magnetic texture of the domain walls in magnetic helices offer unconventional means to control the wall dynamics relying on spin-orbit Rashba torque. The chiral symmetry breaking due to the Dzyaloshinskii-Moriya interaction leads to the opposite directions of the domain wall motion in left- or right-handed helices. Furthermore, for the magnetic helices, the emergent effective anisotropy term and Dzyaloshinskii-Moriya interaction can be attributed to the clear geometrical parameters like curvature and torsion offering intuitive understanding of the complex curvilinear effects in magnetism.
Hall effect in charged conducting ferroelectric domain walls.
Campbell, M P; McConville, J P V; McQuaid, R G P; Prabhakaran, D; Kumar, A; Gregg, J M
2016-12-12
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ∼1 × 10(16) cm(-3) is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of∼50 cm(2)V(-1)s(-1) is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons.
Rashba Torque Driven Domain Wall Motion in Magnetic Helices
Pylypovskyi, Oleksandr V.; Sheka, Denis D.; Kravchuk, Volodymyr P.; Yershov, Kostiantyn V.; Makarov, Denys; Gaididei, Yuri
2016-01-01
Manipulation of the domain wall propagation in magnetic wires is a key practical task for a number of devices including racetrack memory and magnetic logic. Recently, curvilinear effects emerged as an efficient mean to impact substantially the statics and dynamics of magnetic textures. Here, we demonstrate that the curvilinear form of the exchange interaction of a magnetic helix results in an effective anisotropy term and Dzyaloshinskii–Moriya interaction with a complete set of Lifshitz invariants for a one-dimensional system. In contrast to their planar counterparts, the geometrically induced modifications of the static magnetic texture of the domain walls in magnetic helices offer unconventional means to control the wall dynamics relying on spin-orbit Rashba torque. The chiral symmetry breaking due to the Dzyaloshinskii–Moriya interaction leads to the opposite directions of the domain wall motion in left- or right-handed helices. Furthermore, for the magnetic helices, the emergent effective anisotropy term and Dzyaloshinskii–Moriya interaction can be attributed to the clear geometrical parameters like curvature and torsion offering intuitive understanding of the complex curvilinear effects in magnetism. PMID:27008975
Hall effect in charged conducting ferroelectric domain walls
Campbell, M. P.; McConville, J.P.V.; McQuaid, R.G.P.; Prabhakaran, D.; Kumar, A.; Gregg, J. M.
2016-01-01
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ∼1 × 1016 cm−3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of∼50 cm2V−1s−1 is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons. PMID:27941794
Dissipative dynamics of composite domain walls in magnetic nanostrips
NASA Astrophysics Data System (ADS)
Tretiakov, O.; Bazaliy, Ya. B.; Tchernyshyov, O.
2007-03-01
We describe the dynamics of domain walls in thin magnetic nanostrips of submicron width under the action of magnetic field. Once the fast precession of magnetization is averaged out, the dynamics reduces to purely dissipative motion where the system follows the direction of the local energy gradient (Glauber's model A) [1]. We then apply the method of collective coordinates [2] to our variational model of the domain wall [3] reducing the dynamics to the evolution of two collective coordinates (the location of the vortex core). In weak magnetic fields the wall moves steadily. The calculated velocity is in good agreement with the results of numerical simulations (no adjustable parameters were used). In higher fields the steady motion breaks down and acquires an oscillatory character caused by periodic creation and annihilation of topological defects comprising the domain wall [3]. Numerical simulations uncover at least two different modes of oscillation. [1] C. J. Garc'ia-Cervera and W. E, J. Appl. Phys. 90, 370 (2001). [2] A. S'anchez and A. R. Bishop, SIAM Rev. 40, 579 (1998). [3] Preceding talk by O. Tchernyshyov.
Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M.; Ashcroft, C. M.; Canalias, C.; Gruverman, A.
2014-08-14
Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.
Z2 massive axions, domain walls and inflation
NASA Astrophysics Data System (ADS)
Assyyaee, Shahrokh; Riazi, Nematollah
2017-01-01
We have analyzed a U(1) model which is broken explicitly to a Z2 model. The proposal results in generating two types of stable domain walls, in contrast with the more common NDW = 1 version which is already used to explain axion invisibility for the UPQ(1) model. We have tried to take into account any possible relation with previous studies. We have studied some of the domain properties, proposing an approximate solution which satisfies boundary conditions and the static virial theorem, simultaneously. Invoking the mentioned approximation, we have been able to obtain an analytical insight about the effect of parameters on the domain wall features, particularly on their surface energy density which is of great importance in cosmological studies when one tries to avoid domain wall energy domination problem. Next, we have mainly focused on the likely inflationary scenarios resulting from the model, including saddle point inflation, again insisting on analytical discussions to be able to follow the role of parameters. We have tried to relate inflationary scenarios to the known categories to take advantage of the previous detailed studies under the inflationary topic over the decades. We have concluded that any successful inflationary scenario requires large fields within the present model. Calculations are mainly done analytically, although numerical results are also obtained to reinforce the analytical results.
Characterization of magnetic domain walls using electron magnetic chiral dichroism.
Che, Ren Chao; Liang, Chong Yun; He, Xiang; Liu, Hai Hua; Duan, Xiao Feng
2011-04-01
Domain walls and spin states of permalloy were investigated by electron magnetic chiral dichroism (EMCD) technique in Lorentz imaging mode using a JEM-2100F transmission electron microscope. EMCD signals from both Fe and Ni L3,2 edges were detected from the Bloch lines but not from the adjacent main wall. The magnetic polarity orientation of the circular Bloch line is opposite to that of the cross Bloch line. The orientations of Fe and Ni spins are parallel rather than antiparallel, both at the cross Bloch line and circular Bloch line.
NASA Astrophysics Data System (ADS)
Cheong, Sang-Wook; Rutgers CenterEmergent Materials Team
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO 3 /SrTiO 3 , across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric domain walls can be highly conducting but energetically unfavored; however, they were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr) 3 Ti 2 O 7 single crystals. From the exploration of antiphase domain boundaries, which are hidden in piezoresponse force microscopy, using dark-field electron microscopy, we have explored the macroscopic topology of polarization domains and antiphase domains. We found that the macroscopic domain topology is directly responsible for the presence of charged domain walls, and is closely related with the polarization domain switching mechanism in (Ca,Sr) 3 Ti 2 O 7 . Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Faster motion of double 360° domain walls system induced by spin-polarized current
Zhang, S. F.; Zhu, Q. Y.; Mu, C. P.; Zheng, Q.; Liu, X. Y.; Liu, Q. F.; Wang, J. B.
2014-05-07
By micromagnetic simulation, we investigated a double 360° domain walls system in two parallel nanowires. Two domain walls are coupled to each other via magnetostatic interaction. When a spin-polarized current is applied to only one nanowire or both nanowires with the same direction, the two domain walls propagate along nanowires together. The critical velocity of such system is obviously higher than that of a single 360° domain wall. The interaction between the two domain walls can be modeled as two bodies that connected by a spring, and we analyzed the coupling characteritics of the double 360° domain walls at last.
Ultrafast optical demagnetization manipulates nanoscale spin structure in domain walls
Pfau, B.; Schaffert, S.; Müller, L.; Gutt, C.; Al-Shemmary, A.; Büttner, F.; Delaunay, R.; Düsterer, S.; Flewett, S.; Frömter, R.; Geilhufe, J.; Guehrs, E.; Günther, C.M.; Hawaldar, R.; Hille, M.; Jaouen, N.; Kobs, A.; Li, K.; Mohanty, J.; Redlin, H.; Schlotter, W.F.; Stickler, D.; Treusch, R.; Vodungbo, B.; Kläui, M.; Oepen, H.P.; Lüning, J.; Grübel, G.; Eisebitt, S.
2012-01-01
During ultrafast demagnetization of a magnetically ordered solid, angular momentum has to be transferred between the spins, electrons, and phonons in the system on femto- and picosecond timescales. Although the intrinsic spin-transfer mechanisms are intensely debated, additional extrinsic mechanisms arising due to nanoscale heterogeneity have only recently entered the discussion. Here we use femtosecond X-ray pulses from a free-electron laser to study thin film samples with magnetic domain patterns. We observe an infrared-pump-induced change of the spin structure within the domain walls on the sub-picosecond timescale. This domain-topography-dependent contribution connects the intrinsic demagnetization process in each domain with spin-transport processes across the domain walls, demonstrating the importance of spin-dependent electron transport between differently magnetized regions as an ultrafast demagnetization channel. This pathway exists independent from structural inhomogeneities such as chemical interfaces, and gives rise to an ultrafast spatially varying response to optical pump pulses. PMID:23033076
Domain Wall Motion by the Magnonic Spin Seebeck Effect
NASA Astrophysics Data System (ADS)
Hinzke, D.; Nowak, U.
2011-07-01
The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.
Domain wall motion by the magnonic spin Seebeck effect.
Hinzke, D; Nowak, U
2011-07-08
The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.
Longitudinal domain wall formation in elongated assemblies of ferromagnetic nanoparticles.
Varón, Miriam; Beleggia, Marco; Jordanovic, Jelena; Schiøtz, Jakob; Kasama, Takeshi; Puntes, Victor F; Frandsen, Cathrine
2015-09-29
Through evaporation of dense colloids of ferromagnetic ~13 nm ε-Co particles onto carbon substrates, anisotropic magnetic dipolar interactions can support formation of elongated particle structures with aggregate thicknesses of 100-400 nm and lengths of up to some hundred microns. Lorenz microscopy and electron holography reveal collective magnetic ordering in these structures. However, in contrast to continuous ferromagnetic thin films of comparable dimensions, domain walls appear preferentially as longitudinal, i.e., oriented parallel to the long axis of the nanoparticle assemblies. We explain this unusual domain structure as the result of dipolar interactions and shape anisotropy, in the absence of inter-particle exchange coupling.
Kaon B-parameter from quenched domain-wall QCD
Aoki, Y.; Blum, T.; Christ, N.H.; Mawhinney, R.D.
2006-05-01
We present numerical results for the kaon B-parameter, B{sub K}, determined in the quenched approximation of lattice QCD. Our simulations are performed using domain-wall fermions and the renormalization group improved, DBW2 gauge action which combine to give quarks with good chiral symmetry at finite lattice spacing. Operators are renormalized nonperturbatively using the RI/MOM scheme. We study scaling by performing the simulation on two different lattices with a{sup -1}=1.982(30) and 2.914(54) GeV. We combine this quenched scaling study with an earlier calculation of B{sub K} using two flavors of dynamical, domain-wall quarks at a single lattice spacing to obtain B{sub K}{sup MSNDR}({mu}=2 GeV)=0.563(21)(39)(30), were the first error is statistical, the second systematic (without quenching errors) and the third estimates the error due to quenching.
Discontinuous properties of current-induced magnetic domain wall depinning.
Hu, X F; Wu, J; Niu, D X; Chen, L; Morton, S A; Scholl, A; Huang, Z C; Zhai, Y; Zhang, W; Will, I; Xu, Y B; Zhang, R; van der Laan, G
2013-10-30
The current-induced motion of magnetic domain walls (DWs) confined to nanostructures is of great interest for fundamental studies as well as for technological applications in spintronic devices. Here, we present magnetic images showing the depinning properties of pulse-current-driven domain walls in well-shaped Permalloy nanowires obtained using photoemission electron microscopy combined with x-ray magnetic circular dichroism. In the vicinity of the threshold current density (Jth = 4.2 × 10(11) A.m(-2)) for the DW motion, discontinuous DW depinning and motion have been observed as a sequence of "Barkhausen jumps". A one-dimensional analytical model with a piecewise parabolic pinning potential has been introduced to reproduce the DW hopping between two nearest neighbour sites, which reveals the dynamical nature of the current-driven DW motion in the depinning regime.
Localization and chiral symmetry in three flavor domain wall QCD
Antonio, David J.; Bowler, Kenneth C.; Boyle, Peter A.; Hart, Alistair; Kenway, Richard D.; Tweedie, Robert J.; Christ, Norman H.; Cohen, Saul D.; Li, Shu; Lin, Meifeng; Mawhinney, Robert D.; Clark, Michael A.; Dawson, Chris; Joo, Balint; Jung, Chulwoo; Maynard, Christopher M.; Ohta, Shigemi; Yamaguchi, Azusa
2008-01-01
We present results for the dependence of the residual mass of domain wall fermions on the size of the fifth dimension and its relation to the density and localization properties of low-lying eigenvectors of the corresponding Hermitian Wilson Dirac operator in three flavor domain wall QCD. Using the DBW2 and Iwasaki gauge actions, we generate ensembles of configurations with a 16{sup 3}x32 space-time volume and an extent of 8 in the fifth dimension for the sea quarks. We demonstrate the existence of a regime where the degree of locality, the size of chiral symmetry breaking, and the rate of topology change can be acceptable for inverse lattice spacings a{sup -1}{>=}1.6 GeV, enabling a programme of simulations of 2+1 flavor QCD to be conducted safely in this region of parameter space.
Exact BPS domain walls at finite gauge coupling
NASA Astrophysics Data System (ADS)
Blaschke, Filip
2017-01-01
Bogomol'nyi-Prasad-Sommerfield solitons in models with spontaneously broken gauge symmetry have been intensively studied at the infinite gauge coupling limit, where the governing equation-the so-called master equation-is exactly solvable. Except for a handful of special solutions, the standing impression is that analytic results at finite coupling are generally unavailable. The aim of this paper is to demonstrate, using domain walls in Abelian-Higgs models as the simplest example, that exact solitons at finite gauge coupling can be readily obtained if the number of Higgs fields (N) is large enough. In particular, we present a family of exact solutions, describing N domain walls at arbitrary positions in models with at least N≥2N+1. We have also found that adding together any pair of solutions can produce a new exact solution if the combined tension is below a certain limit.
Fermion condensation and gapped domain walls in topological orders
NASA Astrophysics Data System (ADS)
Wan, Yidun; Wang, Chenjie
2017-03-01
We study fermion condensation in bosonic topological orders in two spatial dimensions. Fermion condensation may be realized as gapped domain walls between bosonic and fermionic topological orders, which may be thought of as real-space phase transitions from bosonic to fermionic topological orders. This picture generalizes the previous idea of understanding boson condensation as gapped domain walls between bosonic topological orders. While simple-current fermion condensation was considered before, we systematically study general fermion condensation and show that it obeys a Hierarchy Principle: a general fermion condensation can always be decomposed into a boson condensation followed by a minimal fermion condensation. The latter involves only a single self-fermion that is its own anti-particle and that has unit quantum dimension. We develop the rules of minimal fermion condensation, which together with the known rules of boson condensation, provides a full set of rules for general fermion condensation.
Tunable chiral spin texture in magnetic domain-walls.
Franken, J H; Herps, M; Swagten, H J M; Koopmans, B
2014-06-11
Magnetic domain-walls (DWs) with a preferred chirality exhibit very efficient current-driven motion. Since structural inversion asymmetry (SIA) is required for their stability, the observation of chiral domain walls in highly symmetric Pt/Co/Pt is intriguing. Here, we tune the layer asymmetry in this system and observe, by current-assisted DW depinning experiments, a small chiral field which sensitively changes. Moreover, we convincingly link the observed efficiency of DW motion to the DW texture, using DW resistance as a direct probe for the internal orientation of the DW under the influence of in-plane fields. The very delicate effect of capping layer thickness on the chiral field allows for its accurate control, which is important in designing novel materials for optimal spin-orbit-torque-driven DW motion.
Discontinuous properties of current-induced magnetic domain wall depinning
Hu, X. F.; Wu, J.; Niu, D. X.; Chen, L.; Morton, S. A.; Scholl, A.; Huang, Z. C.; Zhai, Y.; Zhang, W.; Will, I.; Xu, Y. B.; Zhang, R.; van der Laan, G.
2013-01-01
The current-induced motion of magnetic domain walls (DWs) confined to nanostructures is of great interest for fundamental studies as well as for technological applications in spintronic devices. Here, we present magnetic images showing the depinning properties of pulse-current-driven domain walls in well-shaped Permalloy nanowires obtained using photoemission electron microscopy combined with x-ray magnetic circular dichroism. In the vicinity of the threshold current density (Jth = 4.2 × 1011 A.m−2) for the DW motion, discontinuous DW depinning and motion have been observed as a sequence of “Barkhausen jumps”. A one-dimensional analytical model with a piecewise parabolic pinning potential has been introduced to reproduce the DW hopping between two nearest neighbour sites, which reveals the dynamical nature of the current-driven DW motion in the depinning regime. PMID:24170087
Decays of bosonic and fermionic modes on a domain wall
NASA Astrophysics Data System (ADS)
Loginov, A. Yu.
2017-03-01
The decays of excited bosonic and excited fermionic modes in the external field of the domain wall are studied. The wave functions of the excited fermionic modes are found analytically in the external field approximation. Some properties of the fermionic modes are investigated. The reflection and transmission coefficients are calculated for fermion scattering from the domain wall. Properties of the reflection and transmission coefficients are studied. The decays of the first excited fermionic mode are investigated to the first order in the Yukawa coupling constant. The amplitudes, angular distributions, and widths of these decays are found by analytical and numerical methods. Decays of the excited bosonic mode are also investigated to the first order in the Yukawa and self-interaction coupling constants. The amplitudes, angular distributions, and widths of these decays are obtained analytically and by numerical methods.
Analysis of ultra-narrow ferromagnetic domain walls
Jenkins, Catherine; Paul, David
2012-01-10
New materials with high magnetic anisotropy will have domains separated by ultra-narrow ferromagnetic walls with widths on the order of a few unit cells, approaching the limit where the elastic continuum approximation often used in micromagnetic simulations is accurate. The limits of this approximation are explored, and the static and dynamic interactions with intrinsic crystalline defects and external driving elds are modeled. The results developed here will be important when considering the stability of ultra-high-density storage media.
Effective action of a five-dimensional domain wall
NASA Astrophysics Data System (ADS)
Burnier, Y.; Zuleta, K.
2009-05-01
We calculate the four-dimensional low-energy effective action for the perturbations of a two-scalar domain wall model in five dimensions. Comparison of the effective action to the Nambu-Goto action reveals the presence of an additional coupling between the light scalar field and the massless translation mode (branon excitation), which can be written in terms of the curvature scalar of the induced metric. We comment on the impact of this interaction to branon physics.
Experimental Study on Current-Driven Domain Wall Motion
NASA Astrophysics Data System (ADS)
Ono, T.; Yamaguchi, A.; Tanigawa, H.; Yano, K.; Kasai, S.
2006-06-01
Current-driven domain wall (DW) motion for a well-defined single DW in a micro-fabricated magnetic wire with submicron width was investigated by real-space observation with magnetic force microscopy. Magnetic force microscopy visualizes that a single DW introduced in a wire is displaced back and forth by positive and negative pulsed-current, respectively. Effect of the Joule heating, reduction of the threshold current density by shape control, and magnetic ratchet effect are also presented.
Critical domain-wall dynamics of model B.
Dong, R H; Zheng, B; Zhou, N J
2009-05-01
With Monte Carlo methods, we simulate the critical domain-wall dynamics of model B, taking the two-dimensional Ising model as an example. In the macroscopic short-time regime, a dynamic scaling form is revealed. Due to the existence of the quasirandom walkers, the magnetization shows intrinsic dependence on the lattice size L . An exponent which governs the L dependence of the magnetization is measured to be sigma=0.243(8) .
Domain-wall motion in random potential and hysteresis modeling
Pasquale, M.; Basso, V.; Bertotti, G.; Jiles, D.C.; Bi, Y.
1998-06-01
Two different approaches to hysteresis modeling are compared using a common ground based on energy relations, defined in terms of dissipated and stored energy. Using the Preisach model and assuming that magnetization is mainly due to domain-wall motion, one can derive the expression of magnetization along a major loop typical of the Jiles{endash}Atherton model and then extend its validity to cases where mean-field effects and reversible contributions are present. {copyright} {ital 1998 American Institute of Physics.}
Domain Walls, Black Holes and Supersymmetric Quantum Mechanics.
Shmakova, Marina
2001-07-25
Supersymmetric solutions, such as BPS domain walls or black holes, in four- and five-dimensional supergravity theories with eight supercharges can be described by effective quantum mechanics with a potential term. We show how properties of the latter theory can help us to learn about the physics of supersymmetric vacua and BPS solutions in these supergravity theories. The general approach is illustrated in a number of specific examples where scalar fields of matter multiplets take values in symmetric coset spaces.
Asymmetric angular dependence of domain wall motion in magnetic nanowires.
Nam, Chunghee
2013-03-01
An angular dependence of domain wall (DW) motion is studied in a magnetic wire consisting of a giant-magnetoresistance spin-valve. A DW pinning site is formed by a single notch, where a conventional linear one and a specially designed tilted one are compared. The asymmetric angular dependence was found in the DW depinning behavior with the tilted notch. The geometry control of the pinning site can be useful for DW diode devices using a rotating magnetic field.
Dynamics of biased domain walls and the devaluation mechanism
NASA Astrophysics Data System (ADS)
Avelino, P. P.; Martins, C. J. A. P.; Sousa, L.
2008-08-01
We study the evolution of biased domain walls in the early universe. We explicitly discuss the roles played by the surface tension and volume pressure in the evolution of the walls, and quantify their effects by looking at the collapse of spherical wall solutions. We then apply our results to a particular mechanism, known as the devaluation scenario, in which the dynamics of biased domain walls was suggested as a possible solution to the cosmological constant problem. Our results indicate that devaluation will, in general, lead to values of the cosmological constant that differ by several orders of magnitude from the observationally inferred value, ρvac1/4˜10-3eV. We also argue that the reasons behind this are not specific to a particular realization, and are expected to persist in any scenario of this kind, except if a low-energy cutoff on the spectra of vacuum energy densities, of the order of the critical density at the present time, is postulated. This implies that any such scenario will require a fine-tuning similar to the usual one.
Dynamics of biased domain walls and the devaluation mechanism
Avelino, P. P.; Sousa, L.; Martins, C. J. A. P.
2008-08-15
We study the evolution of biased domain walls in the early universe. We explicitly discuss the roles played by the surface tension and volume pressure in the evolution of the walls, and quantify their effects by looking at the collapse of spherical wall solutions. We then apply our results to a particular mechanism, known as the devaluation scenario, in which the dynamics of biased domain walls was suggested as a possible solution to the cosmological constant problem. Our results indicate that devaluation will, in general, lead to values of the cosmological constant that differ by several orders of magnitude from the observationally inferred value, {rho}{sub vac}{sup 1/4}{approx}10{sup -3} eV. We also argue that the reasons behind this are not specific to a particular realization, and are expected to persist in any scenario of this kind, except if a low-energy cutoff on the spectra of vacuum energy densities, of the order of the critical density at the present time, is postulated. This implies that any such scenario will require a fine-tuning similar to the usual one.
Symmetry-protected topological phases from decorated domain walls.
Chen, Xie; Lu, Yuan-Ming; Vishwanath, Ashvin
2014-03-26
Symmetry-protected topological phases generalize the notion of topological insulators to strongly interacting systems of bosons or fermions. A sophisticated group cohomology approach has been used to classify bosonic symmetry-protected topological phases, which however does not transparently predict their properties. Here we provide a physical picture that leads to an intuitive understanding of a large class of symmetry-protected topological phases in d=1,2,3 dimensions. Such a picture allows us to construct explicit models for the symmetry-protected topological phases, write down ground state wave function and discover topological properties of symmetry defects both in the bulk and on the edge of the system. We consider symmetries that include a Z2 subgroup, which allows us to define domain walls. While the usual disordered phase is obtained by proliferating domain walls, we show that symmetry-protected topological phases are realized when these domain walls are decorated, that is, are themselves symmetry-protected topological phases in one lower dimension. This construction works both for unitary Z2 and anti-unitary time reversal symmetry.
Dynamics of domain walls in Ti-Ni-Cu alloy
NASA Astrophysics Data System (ADS)
Liang, X. L.; Zhang, Z. F.; Liu, Q.; Shen, H. M.; Wang, Y. N.; Shi, P.; Chen, F. X.; Yang, D. Z.
1999-12-01
The internal friction for Ti-Ni-Cu shape memory alloys (SMAs) was measured in the Hz and kHz range. The peak temperature in the Hz range is independent of the measuring frequencies. Only in the tens of kHz range does the peak temperature shift with the frequencies, showing a thermally activated progress with icons/Journals/Common/tau" ALT="tau" ALIGN="TOP"/> = icons/Journals/Common/tau" ALT="tau" ALIGN="TOP"/>0e-B/Tc - T, characteristic of viscous motion of domain walls, instead of the Arrhenius relation. Taking into account the change of the density of the domain walls during the phase transformation, we modified the Q-1-formula by using a model of viscous motion of domain walls, obtaining a good result in agreement with the experimental data. Additionally, corresponding parameters, which play a key role in the shape memory effect, such as the viscosity coefficient and the effective pinning force constant, were obtained.
Domain wall propagation tuning in magnetic nanowires through geometric modulation
NASA Astrophysics Data System (ADS)
Arzuza, L. C. C.; López-Ruiz, R.; Salazar-Aravena, D.; Knobel, M.; Béron, F.; Pirota, K. R.
2017-06-01
The magnetic behavior of nickel modulated nanowires embedded in porous alumina membranes is investigated. Their diameters exhibit a sharp transition between below (35 nm) and above (52 nm) the theoretical limit for transverse and vortex domain walls. Magnetic hysteresis loops and first-order reversal curves (FORCs) were measured on several ordered nanowire arrays with different wide-narrow segment lengths ratio and compared with those from homogenous nanowires. The experimental magnetic response evidences a rather complex susceptibility behavior for nanowires with modulated diameter. Micromagnetic simulations on isolated and first-neighbors arrays of nanowires show that the domain wall structure, which depends on the segment diameter, suffers a transformation while crossing the diameter modulation, but without any pinning. The experimental array magnetic behavior can be ascribed to a heterogeneous stray field induced by the diameter modulation, yielding a stronger interaction field at the wide extremity than at the narrow one. The results evidence the possibility to control the domain wall propagation and morphology by modulating the lateral aspect of the magnetic entity.
Third type of domain wall in soft magnetic nanostrips.
Nguyen, V D; Fruchart, O; Pizzini, S; Vogel, J; Toussaint, J-C; Rougemaille, N
2015-07-23
Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became in the past years the subject of intense works, mainly focused on controlling, manipulating, and moving their internal magnetic configuration. In nanostrips with in-plane magnetisation, two DWs have been identified: in thin and narrow strips, transverse walls are energetically favored, while in thicker and wider strips vortex walls have lower energy. The associated phase diagram is now well established and often used to predict the low-energy magnetic configuration in a given magnetic nanostructure. However, besides the transverse and vortex walls, we find numerically that another type of wall exists in permalloy nanostrips. This third type of DW is characterised by a three-dimensional, flux closure micromagnetic structure with an unusual length and three internal degrees of freedom. Magnetic imaging on lithographically-patterned permalloy nanostrips confirms these predictions and shows that these DWs can be moved with an external magnetic field of about 1 mT. An extended phase diagram describing the regions of stability of all known types of DWs in permalloy nanostrips is provided.
A reversible conversion between a skyrmion and a domain-wall pair in a junction geometry.
Zhou, Yan; Ezawa, Motohiko
2014-08-13
Skyrmions are expected to be a key component of the next-generation of spintronics: known as 'skyrmionics'. On the other hand, there is a well-established memory device encoded by a sequence of domain walls. Here we show a conversion is possible between a skyrmion and a domain-wall pair by connecting wide and narrow nanowires, enabling the information transmission between a skyrmion device and a domain-wall device. Our results will be the basis of a hybrid device made of skyrmions and domain walls, where the encoded information in domain walls is converted into skyrmions, and then read out by converting the skyrmions back to domain walls after a functional control of the skyrmions. Such a device has the potential to outperform domain-wall racetrack memory because of the combined advantages of domain walls and skyrmions for spintronics application.
Domain walls in a chiral d -wave superconductor on the honeycomb lattice
NASA Astrophysics Data System (ADS)
Awoga, Oladunjoye A.; Bouhon, Adrien; Black-Schaffer, Annica M.
2017-07-01
We perform a fully self-consistent study of domain walls between different chiral domains in chiral dx2-y2±i dx y -wave superconductors with an underlying honeycomb lattice structure. We investigate domain walls along all possible armchair and zigzag directions and with a finite global phase shift across the domain wall, in addition to the change of chirality. For armchair domain walls we find the lowest domain wall energy at zero global phase shift, while the most favorable zigzag domain wall has a finite global phase shift dependent on the doping level. Below the van Hove singularity the armchair domain wall is most favorable, while at even higher doping the zigzag domain wall has the lowest energy. The domain wall causes a local suppression of the superconducting order parameter, with the superconducting recovery length following a universal curve for all domain walls. Moreover, we always find four subgap states crossing zero energy and well localized to the domain wall. However, the details of their energy spectrum vary notably, especially with the global phase shift across the domain wall.
Magnetic domain wall engineering in a nanoscale permalloy junction
NASA Astrophysics Data System (ADS)
Wang, Junlin; Zhang, Xichao; Lu, Xianyang; Zhang, Jason; Yan, Yu; Ling, Hua; Wu, Jing; Zhou, Yan; Xu, Yongbing
2017-08-01
Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.
Domain wall motion driven by an oscillating magnetic field
NASA Astrophysics Data System (ADS)
Moon, Kyoung-Woong; Kim, Duck-Ho; Kim, Changsoo; Kim, Dae-Yun; Choe, Sug-Bong; Hwang, Chanyong
2017-03-01
The coherent unidirectional motion of magnetic domain walls (DWs) is a key technology used in memory and logic device applications, as demonstrated in magnetic strips by electric current flow as well as in films by oscillation of a tilted magnetic field. Here we introduce a coherent unidirectional motion of DWs in the strip, utilizing an oscillating field, which is described within a previous 1D model. The essential criterion for DW motion in this approach is the oscillating-field-induced modulation of the DW width, which has not been previously considered. This DW motion driven by width modulation sheds light on high frequency domain manipulation in spin devices. A comprehensive inspection of field angle dependence reveals that unidirectional DW motion in this model requires chiral DWs, followed by asymmetric deformation of the domain shape.
Structure and dynamic properties of the twisted magnetic domain wall in an electric field
NASA Astrophysics Data System (ADS)
Borich, M. A.; Tankeev, A. P.; Smagin, V. V.
2016-01-01
The structure of the domain wall in a magnetically uniaxial ferromagnetic film placed in an external electric field has been studied. It has been shown that the domain wall has a complex twisted structure whose characteristics (thickness, profile, and limit velocity of steady motion) depend on the film thickness, quality factor, and external electric field. The effect of the electric field on the domain wall is caused by inhomogeneous magnetoelectric coupling taking place in domain walls with a twisted structure.
Ferroelasticity in palmierite-type(1 - x)Pb3(PO4)2 - xPb3(AsO4)2
NASA Astrophysics Data System (ADS)
Bismayer, Ulli; Mihailova, Boriana; Angel, Ross
2017-06-01
Lead phosphate-arsenate Pb3(P1-x As x O4)2 undergoes an improper ferroelastic phase transition from a rhombohedral paraphase R\\bar{3}m to a monoclinic ferrophase C2/c leading to distinct twin boundary patterns. On cooling compounds with x larger than 0.8 undergo further transitions to monoclinic low-temperature phases, whereas the composition with x = 0.8 shows order-parameter coupling phenomena. The transformation R\\bar{3}m -C2/c was described on the basis of a three-state Potts model and the existence of precursors of monoclinic clusters in the rhombohedral paraphase. The system is one of the best studied improper ferroelastics. Due to its two-mode phonon behaviour the solid solution exhibits multistep temperature- as well as pressure-driven structural transformations with different length and time scales. Relevant investigations and findings of this palmierite-type material have been made by Prof E K H Salje. Some of the most prominent results from x-ray diffraction, optical microscopy and Raman scattering are reviewed, and the potential implications for domain-wall structures and engineering are discussed.
Propagating and reflecting of spin wave in permalloy nanostrip with 360° domain wall
Zhang, Senfu; Mu, Congpu; Zhu, Qiyuan; Zheng, Qi; Liu, Xianyin; Wang, Jianbo; Liu, Qingfang
2014-01-07
By micromagnetic simulation, we investigated the interaction between propagating spin wave (or magnonic) and a 360° domain wall in a nanostrip. It is found that propagating spin wave can drive a 360° domain wall motion, and the velocity and direction are closely related to the transmission coefficient of the spin wave of the domain wall. When the spin wave passes through the domain wall completely, the 360° domain wall moves toward the spin wave source. When the spin wave is reflected by the domain wall, the 360° domain wall moves along the spin wave propagation direction. Moreover, when the frequency of the spin wave is coincident with that of the 360° domain wall normal mode, the 360° domain wall velocity will be resonantly enhanced no matter which direction the 360 DW moves along. On the other hand, when the spin wave is reflected from the moving 360° domain wall, we observed the Doppler effect clearly. After passing through a 360° domain wall, the phase of the spin wave is changed, and the phase shift is related to the frequency. Nevertheless, phase shift could be manipulated by the number of 360° domain walls that spin wave passing through.
Nanoscale studies of ferroelectric domain walls as pinned elastic interfaces
NASA Astrophysics Data System (ADS)
Paruch, Patrycja; Guyonnet, Jill
2013-10-01
The competition between elasticity and pinning of an interface in a fluctuating potential energy landscape gives rise to characteristic self-affine roughening and a complex dynamic response to applied forces. This statistical physics approach provides a general framework in which the behaviour of systems as diverse as propagating fractures, wetting lines, burning fronts or surface growth can be described. Domain walls separating regions with different polarisation orientation in ferroelectric materials are another example of pinned elastic interfaces, and can serve as a particularly useful model system. Reciprocally, a better understanding of this fundamental physics allows key parameters controlling domain switching, growth, and stability to be determined, and used to improve the performance of ferroelectric materials in applications such as memories, sensors, and actuators. In this review, we focus on piezoresponse force microscopy measurements of individual ferroelectric domain walls, allowing their static configuration and dynamic response to be accessed with nanoscale resolution over multiple orders of length scale and velocity. Combined with precise control over the applied electric field, temperature, and strain, and the ability to influence the type and density of defects present in the sample, this experimental system has allowed not only a direct demonstration of creep motion and roughening, but provides an opportunity to test less-well-understood aspects of out-of-equilibrium behaviour, and the effects of greater complexity in the structure of both the interface and the disorder landscape pinning it.
Controlled motion of domain walls in submicron amorphous wires
Ţibu, Mihai; Lostun, Mihaela; Rotărescu, Cristian; Atiţoaie, Alexandru; Lupu, Nicoleta; Óvári, Tibor-Adrian Chiriac, Horia; Allwood, Dan A.
2016-05-15
Results on the control of the domain wall displacement in cylindrical Fe{sub 77.5}Si{sub 7.5}B{sub 15} amorphous glass-coated submicron wires prepared by rapid quenching from the melt are reported. The control methods have relied on conical notches with various depths, up to a few tens of nm, made in the glass coating and in the metallic nucleus using a focused ion beam (FIB) system, and on the use of small nucleation coils at one of the sample ends in order to apply magnetic field pulses aimed to enhance the nucleation of reverse domains. The notch-based method is used for the first time in the case of cylindrical ultrathin wires. The results show that the most efficient technique of controlling the domain wall motion in this type of samples is the simultaneous use of notches and nucleation coils. Their effect depends on wire diameter, notch depth, its position on the wire length, and characteristics of the applied pulse.
Improper ferroelectricity at antiferromagnetic domain walls of perovskite oxides
NASA Astrophysics Data System (ADS)
Yang, Yali; Xiang, Hongjun; Zhao, Hongjian; Stroppa, Alessandro; Zhang, Jincang; Cao, Shixun; Íñiguez, Jorge; Bellaiche, L.; Ren, Wei
2017-09-01
First-principles calculations are performed on magnetic multidomain structures in the SmFe O3 rare-earth orthoferrite compound. We focus on the magnetic symmetry breaking at (001)-oriented antiphase domain walls, treating magnetism in the simplest (collinear) approximation without any relativistic (spin-orbit coupling) effects. We found that the number of Fe O2 layers inside the domains determines the electrical nature of the whole system: multidomains with odd number of layers are paraelectric, while multidomains with even number of layers possess an electric polarization aligned along b axis and a resulting multiferroic P m c 21 ground state. Our ab initio data and model for ferroelectricity induced by spin order reveal that this polarization is of the improper type and originates from an exchange striction mechanism that drives a polar displacement of the oxygen ions located at the magnetic domain walls. Additional calculations ratify that this effect is general among magnetic perovskites with an orthorhombic SmFe O3-like structure.
G-structures and domain walls in heterotic theories
NASA Astrophysics Data System (ADS)
Lukas, Andre; Matti, Cyril
2011-01-01
We consider heterotic string solutions based on a warped product of a four-dimensional domain wall and a six-dimensional internal manifold, preserving two supercharges. The constraints on the internal manifolds with SU(3) structure are derived. They are found to be generalized half-flat manifolds with a particular pattern of torsion classes and they include half-flat manifolds and Strominger's complex non-Kahler manifolds as special cases. We also verify that previous heterotic compactifications on half-flat mirror manifolds are based on this class of solutions.
Domain wall resistance in perpendicularly magnetized (Ga,Mn)As
NASA Astrophysics Data System (ADS)
Chiba, D.; Yamanouchi, M.; Matsukura, F.; Dietl, T.; Ohno, H.
2007-03-01
Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.
Higher dimensional curved domain walls on Kähler surfaces
NASA Astrophysics Data System (ADS)
Akbar, Fiki T.; Gunara, Bobby E.; Radjabaycolle, Flinn C.; Wijaya, Rio N.
2017-03-01
In this paper we study some aspects of curved BPS-like domain walls in higher dimensional gravity theory coupled to scalars where the scalars span a complex Kähler surface with scalar potential turned on. Assuming that a fake superpotential has a special form which depends on Kähler potential and a holomorphic function, we prove that BPS-like equations have a local unique solution. Then, we analyze the vacuum structure of the theory including their stability using dynamical system and their existence in ultraviolet-infrared regions using renormalization group flow.
Distribution of critical current density for magnetic domain wall motion
NASA Astrophysics Data System (ADS)
Fukami, S.; Yamanouchi, M.; Nakatani, Y.; Kim, K.-J.; Koyama, T.; Chiba, D.; Ikeda, S.; Kasai, N.; Ono, T.; Ohno, H.
2014-05-01
The bit-to-bit distribution of a critical current density for magnetic domain wall (DW) motion is studied using Co/Ni wires with various wire widths (ws). The distribution inherently decreases with the w, and the ratio of standard deviation to average is 9.8% for wires with w = 40 nm. It is found that a self-distribution within one device, which is evaluated through repeated measurement, is a dominant factor in the bit-to-bit distribution. Micromagnetic simulation reveals that the distribution originates from DW configuration, which varies with device size.
Domain wall displacement by remote spin-current injection
Skirdkov, P. N.; Zvezdin, K. A.; Belanovsky, A. D.; Zvezdin, A. K.; Grollier, J.; Cros, V.
2014-06-16
We demonstrate numerically the ability to displace a magnetic domain wall (DW) by remote spin current injection. We consider a long and narrow magnetic nanostripe with a single DW. The spin-polarized current is injected perpendicularly to the film plane through a small nanocontact which is located at certain distance from the DW initial position. We show that the DW motion can be initiated not only by conventional spin-transfer torque but also by indirect spin-torque, created by remote spin-current injection and then transferred to the DW by the exchange-spring mechanism. An analytical description of this effect is proposed.
Domain-Wall Resistance in Ferromagnetic (Ga,Mn)As
NASA Astrophysics Data System (ADS)
Chiba, D.; Yamanouchi, M.; Matsukura, F.; Dietl, T.; Ohno, H.
2006-03-01
A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.
Higher-spin modes in a domain-wall universe
NASA Astrophysics Data System (ADS)
Kulaxizi, Manuela; Rahman, Rakibur
2014-10-01
We find a consistent set of equations of motion and constraints for massive higher-spin fluctuations in a gravitational background, required of certain characteristic properties but more general than constant curvature space. Of particular interest among such geometries is a thick domain wall-a smooth version of the Randall-Sundrum metric. Apart from the graviton zero mode, the brane accommodates quasi-bound massive states of higher spin contingent on the bulk mass. We estimate the mass and lifetime of these higher-spin resonances, which may appear as metastable dark matter in a braneworld universe.
High temperature meson propagators with domain-wall quarks.
Lagae, J.-F.; Sinclair, D. K.
1999-09-23
We study the chiral properties of domain-wall quarks at high temperatures on an ensemble of quenched configurations. Low lying eigenmodes of the Dirac operator are calculated and used to check the extent to which the Atiyah-Singer index theorem is obeyed on lattices with finite N{sub 5}. We calculate the connected and disconnected screening propagators for the lowest mass scalar and pseudoscalar mesons in the sectors of different topological charge and note that they behave as expected. Separating out the would-be zero eigenmodes enables us to accurately estimate the disconnected propagators with far less effort than would be needed otherwise.
Magnetic domain walls of relic fermions as Dark Energy
Yajnik, Urjit A.
2005-12-02
We show that relic fermions of the Big Bang can enter a ferromagnetic state if they possess a magnetic moment and satisfy the requirements of Stoner theory of itinerant ferromagnetism. The domain walls of this ferromagnetism can successfully simulate Dark Energy over the observable epoch spanning {approx} 10 billion years. We obtain conditions on the anomalous magnetic moment of such fermions and their masses. Known neutrinos fail to satisfy the requirements thus pointing to the possibility of a new ultralight sector in Particle Physics.
Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics
NASA Astrophysics Data System (ADS)
Esin, A. A.; Alikin, D. O.; Turygin, A. P.; Abramov, A. S.; Hreščak, J.; Walker, J.; Rojac, T.; Bencan, A.; Malic, B.; Kholkin, A. L.; Shur, V. Ya.
2017-02-01
The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such "extrinsic" contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials.
Longitudinal domain wall formation in elongated assemblies of ferromagnetic nanoparticles
Varón, Miriam; Beleggia, Marco; Jordanovic, Jelena; Schiøtz, Jakob; Kasama, Takeshi; Puntes, Victor F.; Frandsen, Cathrine
2015-01-01
Through evaporation of dense colloids of ferromagnetic ~13 nm ε-Co particles onto carbon substrates, anisotropic magnetic dipolar interactions can support formation of elongated particle structures with aggregate thicknesses of 100–400 nm and lengths of up to some hundred microns. Lorenz microscopy and electron holography reveal collective magnetic ordering in these structures. However, in contrast to continuous ferromagnetic thin films of comparable dimensions, domain walls appear preferentially as longitudinal, i.e., oriented parallel to the long axis of the nanoparticle assemblies. We explain this unusual domain structure as the result of dipolar interactions and shape anisotropy, in the absence of inter-particle exchange coupling. PMID:26416297
Control of ultranarrow Co magnetic domain wall widths in artificially patterned H-bar structures
NASA Astrophysics Data System (ADS)
Yang, Z. J.; Sun, L.; Zhang, X. P.; Cao, M.; Deng, X. Y.; Hu, An; Ding, H. F.
2009-02-01
Micromagnetic simulations of Co domain walls on nanometer crossbars that join two oppositely magnetized parallel legs of "H" shaped patterns are studied. The crossbar domain walls can twist in the plane of the H-pattern, out of the plane, or swirl, forming Néel, Bloch, or vortex structures, respectively, depending on the initial configurations. An energy phase diagram as a function of the crossbar constriction yields the Néel wall as the energetically most favorable, followed by the Bloch wall, which becomes unstable and changes into a vortex-like wall with increasing crossbar size. Most interestingly, the Néel wall width can either shrink or expand depending on the crossbar dimensions. In the case that both the crossbar length and width are small, desirable, ultranarrow domain walls can be obtained. These findings are useful for spintronic device design based on domain wall pinning via nanonotch and domain-wall magnetoresistance approaches.
Magnetic Hardening from the Suppression of Domain Walls by Nonmagnetic Particles
Hu, Shenyang Y.; Li, Yulan; McCloy, John S.; Montgomery, Robert O.; Henager, Charles H.
2013-03-07
Magnetic domain switching and hysteresis loops in a single crystal α-iron with and without nonmagnetic particles were simulated based on the magnetization dynamics of the Landau–Lifshitz–Gilbert equation. It is found that the 360o Bloch domain wall is the easiest nucleation site for an anti-direction domain. The nucleation occurs by splitting the 360o Bloch domain wall into two 180o domain walls. However, the existence of nonmagnetic particles destroys the 180o domain walls and prevents the formation of 360o Bloch domain walls. Simulation results demonstrate that the impact of nonmagnetic particle on the formation of the 360o Bloch domain wall is a magnetic hardening mechanism.
Honeycomb and triangular domain wall networks in heteroepitaxial systems
NASA Astrophysics Data System (ADS)
Elder, K. R.; Chen, Z.; Elder, K. L. M.; Hirvonen, P.; Mkhonta, S. K.; Ying, S.-C.; Granato, E.; Huang, Zhi-Feng; Ala-Nissila, T.
2016-05-01
A comprehensive study is presented for the influence of misfit strain, adhesion strength, and lattice symmetry on the complex Moiré patterns that form in ultrathin films of honeycomb symmetry adsorbed on compact triangular or honeycomb substrates. The method used is based on a complex Ginzburg-Landau model of the film that incorporates elastic strain energy and dislocations. The results indicate that different symmetries of the heteroepitaxial systems lead to distinct types of domain wall networks and phase transitions among various surface Moiré patterns and superstructures. More specifically, the results show a dramatic difference between the phase diagrams that emerge when a honeycomb film is adsorbed on substrates of honeycomb versus triangular symmetry. It is also shown that in the small deformation limit, the complex Ginzburg-Landau model reduces to a two-dimensional sine-Gordon free energy form. This free energy can be solved exactly for one dimensional patterns and reveals the role of domains walls and their crossings in determining the nature of the phase diagrams.
Chiral damping in magnetic domain-walls (Conference Presentation)
NASA Astrophysics Data System (ADS)
Jue, Emilie; Safeer, C. K.; Drouard, Marc; Lopez, Alexandre; Balint, Paul; Buda-Prejbeanu, Liliana; Boulle, Olivier; Auffret, Stéphane; Schuhl, Alain; Manchon, Aurélien; Miron, Ioan Mihai; Gaudin, Gilles
2016-10-01
The Dzyaloshinskii-Moriya interaction is responsible for chiral magnetic textures (skyrmions, spin spiral structures, …) in systems with structural inversion asymmetry and high spin-orbit coupling. It has been shown that the domain wall (DW) dynamics in such materials can be explained by chiral DWs with (partly or fully) Néel structure, whose stability derives from an interfacial DMI [1]. In this work, we show that DMI is not the only effect inducing chiral dynamics and demonstrate the existence of a chiral damping [2]. This result is supported by the study of the asymmetry induced by an in-plane magnetic field on field induced domain wall motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. Whereas the asymmetry of the DW motion is consistent with the spatial symmetries expected with the DMI, we show that this asymmetry cannot be attributed to an effective field but originates from a purely dissipative mechanism. The observation of chiral damping, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexist with DMI it is essential for conceiving DW and skyrmion devices. [1] A. Thiaville, et al., EPL 100, 57002 (2012) [2] E. Jué, et al., Nat. Mater., in press (doi: 10.1038/nmat4518)
Domain wall motion in sub-100 nm magnetic wire
NASA Astrophysics Data System (ADS)
Siddiqui, Saima; Dutta, Sumit; Currivan, Jean Anne; Ross, Caroline; Baldo, Marc
2015-03-01
Nonvolatile memory devices such as racetrack memory rely on the manipulation of domain wall (DW) in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and magnetostatic interaction, DW pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. We report on the field driven DW statistics in sub-100 nm wide nanowires made from Co films with very small edge roughness. The nanowires were patterned in the form of a set of concentric rings of 10 μm diameter. Two different width nanowires with two different spacings have been studied. The rings were first saturated in plane to produce onion states and then the DWs were translated in the wires using an orthogonal in-plane field. The position of the DWs in the nanowires was determined with magnetic force microscopy. From the positions of the DWs in the nanowires, the strength of the extrinsic pinning sites was identified and they follow two different distributions in two different types of nanowire rings. For the closely spaced wires, magnetostatic interactions led to correlated movement of DWs in neighboring wires. The implications of DW pinning and interaction in nanoscale DW devices will be discussed.
Antiferromagnetic domain wall as spin wave polarizer and retarder.
Lan, Jin; Yu, Weichao; Xiao, Jiang
2017-08-02
As a collective quasiparticle excitation of the magnetic order in magnetic materials, spin wave, or magnon when quantized, can propagate in both conducting and insulating materials. Like the manipulation of its optical counterpart, the ability to manipulate spin wave polarization is not only important but also fundamental for magnonics. With only one type of magnetic lattice, ferromagnets can only accommodate the right-handed circularly polarized spin wave modes, which leaves no freedom for polarization manipulation. In contrast, antiferromagnets, with two opposite magnetic sublattices, have both left and right-circular polarizations, and all linear and elliptical polarizations. Here we demonstrate theoretically and confirm by micromagnetic simulations that, in the presence of Dzyaloshinskii-Moriya interaction, an antiferromagnetic domain wall acts naturally as a spin wave polarizer or a spin wave retarder (waveplate). Our findings provide extremely simple yet flexible routes toward magnonic information processing by harnessing the polarization degree of freedom of spin wave.Spin waves are promising candidates as carriers for energy-efficient information processing, but they have not yet been fully explored application wise. Here the authors theoretically demonstrate that antiferromagnetic domain walls are naturally spin wave polarizers and retarders, two key components of magnonic devices.
Quantum Annealing and Tunable Magnetic Domain Wall Tunneling
NASA Astrophysics Data System (ADS)
Rosenbaum, Thomas F.
2001-03-01
Traditional simulated annealing utilizes thermal fluctuations for convergence in optimization problems. Quantum tunneling provides a different mechanism for moving between states, with the potential for reduced time scales. We compare thermal and quantum annealing in a model Ising ferromagnet composed of holmium dipoles in a lithium tetrafluoride matrix. The effects of quantum mechanics can be tuned in the laboratory by varying a magnetic field applied transverse to the Ising axis. This new knob permits us to: (1) tune the crossover between a classical Arrhenius response at high temperatures and an athermal response below 100 mK; (2) quantify the tunneling of magnetic domain walls through potential energy barriers in terms of an effective mass [1]; and (3) hasten convergence to the optimal state [2]. [1] "Tunable Quantum Tunneling of Magnetic Domain Walls," J. Brooke, T.F. Rosenbaum and G. Aeppli, preprint (2000). [2] "Quantum Annealing of a Disordered Magnet," J. Brooke, D. Bitko, T.F. Rosenbaum and G. Aeppli, Science 284, 779 (1999).
Magnetic domain wall induced ferroelectricity in double perovskites
NASA Astrophysics Data System (ADS)
Zhou, Hai Yang; Zhao, Hong Jian; Zhang, Wen Qing; Chen, Xiang Ming
2015-04-01
Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu2CoMnO6 has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R3+, Ni2+, Mn4+, and O2- ions in double perovskites R2NiMnO6 (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P21 symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.
Magnetic domain wall induced ferroelectricity in double perovskites
Zhou, Hai Yang; Zhao, Hong Jian E-mail: xmchen59@zju.edu.cn; Chen, Xiang Ming E-mail: xmchen59@zju.edu.cn; Zhang, Wen Qing
2015-04-13
Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu{sub 2}CoMnO{sub 6} has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R{sup 3+}, Ni{sup 2+}, Mn{sup 4+}, and O{sup 2−} ions in double perovskites R{sub 2}NiMnO{sub 6} (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P2{sub 1} symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.
Switching by Domain-Wall Automotion in Asymmetric Ferromagnetic Rings
NASA Astrophysics Data System (ADS)
Mawass, Mohamad-Assaad; Richter, Kornel; Bisig, Andre; Reeve, Robert M.; Krüger, Benjamin; Weigand, Markus; Stoll, Hermann; Krone, Andrea; Kronast, Florian; Schütz, Gisela; Kläui, Mathias
2017-04-01
Spintronic applications based on magnetic domain-wall (DW) motion, such as magnetic data storage, sensors, and logic devices, require approaches to reliably manipulate the magnetization in nanowires. In this paper, we report the direct dynamic experimental visualization of reliable switching from the onion to the vortex state by DW automotion at zero field in asymmetric ferromagnetic rings using a uniaxial field pulse. Employing time-resolved x-ray microscopy, we demonstrate that depending on the detailed spin structure of the DWs and the size and geometry of the rings, the automotive propagation can be tailored during the DW relaxation from the higher-energy onion state to the energetically favored vortex state, where both DWs annihilate. Our measurements show DW automotion with an average velocity of about 60 m /s , which is a significant speed for spintronic devices. Such motion is mostly governed by local forces resulting from the geometry variations in the device. A closer study of the annihilation process via micromagnetic simulations reveals that a new vortex is nucleated in between the two initial walls. We demonstrate that the annihilation of DWs through automotion in our scheme always occurs with the detailed topological nature of the walls influencing only the DW dynamics on a local scale. The simulations show good quantitative agreement with our experimental results. These findings shed light on a robust and reliable switching process of the onion state in ferromagnetic rings, which paves the way for further optimization of these devices.
NASA Astrophysics Data System (ADS)
Rousseau, Olivier; Weil, Raphael; Rohart, Stanislas; Mougin, Alexandra
2016-03-01
This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO3 single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO3 polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO3 crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography.
Rousseau, Olivier; Weil, Raphael; Rohart, Stanislas; Mougin, Alexandra
2016-01-01
This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO3 single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO3 polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO3 crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography. PMID:26987937
Soliton-dependent plasmon reflection at bilayer graphene domain walls.
Jiang, Lili; Shi, Zhiwen; Zeng, Bo; Wang, Sheng; Kang, Ji-Hun; Joshi, Trinity; Jin, Chenhao; Ju, Long; Kim, Jonghwan; Lyu, Tairu; Shen, Yuen-Ron; Crommie, Michael; Gao, Hong-Jun; Wang, Feng
2016-08-01
Layer-stacking domain walls in bilayer graphene are emerging as a fascinating one-dimensional system that features stacking solitons structurally and quantum valley Hall boundary states electronically. The interactions between electrons in the 2D graphene domains and the one-dimensional domain-wall solitons can lead to further new quantum phenomena. Domain-wall solitons of varied local structures exist along different crystallographic orientations, which can exhibit distinct electrical, mechanical and optical properties. Here we report soliton-dependent 2D graphene plasmon reflection at different 1D domain-wall solitons in bilayer graphene using near-field infrared nanoscopy. We observe various domain-wall structures in mechanically exfoliated graphene bilayers, including network-forming triangular lattices, individual straight or bent lines, and even closed circles. The near-field infrared contrast of domain-wall solitons arises from plasmon reflection at domain walls, and exhibits markedly different behaviours at the tensile- and shear-type domain-wall solitons. In addition, the plasmon reflection at domain walls exhibits a peculiar dependence on electrostatic gating. Our study demonstrates the unusual and tunable coupling between 2D graphene plasmons and domain-wall solitons.
NASA Astrophysics Data System (ADS)
Cao, Wenwu
1987-09-01
Perovskite compounds, ABX(,3), have been studied both experimentally and theoretically above and below the cubic-tetragonal improper ferroelastic phase transition. The second order elastic constants of Potassium Manganese Fluoride KMnF(,3) were measured as function of temperature in the cubic prototype phase. Along 100 and 110 the two longitudinal modes were measured from 190 K to 430 K, and the two independent transverse modes from 190 K to 350 K. Strong anomalies were observed near the phase transition (T(,c) = 186 K). The three independent pressure derivatives of the elastic constants were measured from 200 K to 400 K and also show anomalous behavior near T(,c). By means of second harmonic generation, the nonlinearity parameter was measured in 100 , 110 and 111 from 298 K to 348 K. In this temperature range, all six independent third order elastic constants have been determined. Above 320 K the second and third order elastic constants show linear temperature dependence. The values pertaining to the static crystal were obtained by linear extrapolation to T = 0 from the high temperature region where the effect of the phase transition has subsided. A Landau-Ginzburg continuum model for the interphase boundaries in the heterotype phase has been developed. It includes nonlinear local terms and nonlocal gradient terms for the three-component primary order parameter (the rotation angles of the BX(,6) octahedra). By means of group theoretical methods, the gradient coefficients have been expressed in terms of the nonlinear dispersion of the soft phonon mode near the R-point. Analytic and numerical kink-type soliton solutions for both antiphase and twin boundaries were obtained. According to this model, the symmetry in the center of the twin boundary should be trigonal (rather than cubic, as for a proper ferroelastic). Numerical application to Strontium Titanate, SrTiO(,3), shows that at T = 0 the domain wall thickness is 12 (ANGSTROM), and the domain wall energy density
The Spatial Resolution Limit for an Individual Domain Wall in Magnetic Nanowires.
Dutta, Sumit; Siddiqui, Saima A; Currivan-Incorvia, Jean Anne; Ross, Caroline A; Baldo, Marc A
2017-09-13
Magnetic nanowires are the foundation of several promising nonvolatile computing devices, most notably magnetic racetrack memory and domain wall logic. Here, we determine the analog information capacity in these technologies, analyzing a magnetic nanowire containing a single domain wall. Although wires can be deliberately patterned with notches to define discrete positions for domain walls, the line edge roughness of the wire can also trap domain walls at dimensions below the resolution of the fabrication process, determining the fundamental resolution limit for the placement of a domain wall. Using a fractal model for the edge roughness, we show theoretically and experimentally that the analog information capacity for wires is limited by the self-affine statistics of the wire edge roughness, a relevant result for domain wall devices scaled to regimes where edge roughness dominates the energy landscape in which the walls move.
X-ray imaging of extended magnetic domain walls in Ni80Fe20 wires
Basu, S.; Fry, P. W.; Allwood, D. A.; Bryan, M. T.; Gibbs, M. R. J.; Schrefl, T.; Im, M.-Y.; Fischer, P.
2009-06-20
We have used magnetic transmission X-ray microscopy to image magnetization configurations in 700 nm wide Ni{sub 80}Fe{sub 20} planar wires attached to 'nucleation' pads Domain walls were observed to inject only across half of the wire width but extend to several micrometers in length. Magnetostatic interactions with adjacent wires caused further unusual domain wall behavior. Micromagnetic modeling suggests the extended walls have Neel-like structure along their length and indicates weaker exchange coupling than is often assumed. These observations explain previous measurements of domain wall injection and demonstrate that magnetic domain walls in larger nanowires cannot always be considered as localized entities.
Burnett, T L; Comyn, T P; Merson, E; Bell, A J; Mingard, K; Hegarty, T; Cain, M
2008-05-01
xBiFeO(3)-(1-x)PbTiO(3) single crystals were grown via a flux method for a range of compositions. Presented here is a study of the domain configuration in the 0.5BiFeO(3)-0.5PbTiO(3) composition using electron backscatter diffraction to demonstrate the ability of the technique to map ferroelastic domain structures at the micron and submicron scale. The micron-scale domains exhibit an angle of approximately 85 degrees between each variant, indicative of a ferroelastic domain wall in a tetragonal system with a spontaneous strain, c/a - 1 of 0.10, in excellent agreement with the lattice parameters derived from x-ray diffraction. Contrast seen in forescatter images is attributed to variations in the direction of the electrical polarization vector, providing images of ferroelectric domain patterns.
Domain-wall superconductivity in superconductor-ferromagnet hybrids.
Yang, Zhaorong; Lange, Martin; Volodin, Alexander; Szymczak, Ritta; Moshchalkov, Victor V
2004-11-01
Superconductivity and magnetism are two antagonistic cooperative phenomena, and the intriguing problem of their coexistence has been studied for several decades. Recently, artificial hybrid superconductor-ferromagnet systems have been commonly used as model systems to reveal the interplay between competing superconducting and magnetic order parameters, and to verify the existence of new physical phenomena, including the predicted domain-wall superconductivity (DWS). Here we report the experimental observation of DWS in superconductor-ferromagnet hybrids using a niobium film on a BaFe(12)O(19) single crystal. We found that the critical temperature T(c) of the superconductivity nucleation in niobium increases with increasing field until it reaches the saturation field of BaFe(12)O(19). In accordance with the field-shift of the maximum value of T(c), pronounced hysteresis effects have been found in resistive transitions. We argue that the compensation of the applied field by the stray fields of the magnetic domains as well as the change in the domain structure is responsible for the appearance of the DWS and the coexistence of superconductivity and magnetism in the superconductor-ferromagnet hybrids.
Efficient stopping of current-driven domain wall using a local Rashba field
NASA Astrophysics Data System (ADS)
Tatara, Gen; Saarikoski, Henri; Mitsumata, Chiharu
2016-10-01
We show theoretically that a locally embedded Rashba interaction acts as a strong pinning center for current-driven domain walls and demonstrate efficient capturing and depinning of the wall using a weak Rashba interaction of the order of 0.01 eV Å. Our discovery is expected to be useful for highly reliable control of domain walls in racetrack memories.
Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls.
P Del Real, Rafael; Raposo, Victor; Martinez, Eduardo; Hayashi, Masamitsu
2017-03-08
Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls. The distance between the two walls can be reduced with the application of the out-of-plane field, allowing the formation of coupled domain walls. Surprisingly, the current driven velocity of such coupled walls is independent of the out-of-plane field, enabling manipulation of significantly compressed coupled domain walls using current pulses. Moreover, we find that a single current pulse with optimum amplitude can create a large number of closely spaced domain walls. These features allow current induced generation and synchronous motion of highly packed chiral domain walls, a key feature essential for developing domain wall based storage devices.
Khatua, Dipak Kumar; V., Lalitha K.; Fancher, Chris M.; ...
2016-10-18
High energy synchrotron X-ray diffraction, in situ with electric field, was carried out on the morphotropic phase boundary composition of the piezoelectric alloy PbTiO3-BiScO3. We demonstrate a strong correlation between ferroelectric-ferroelastic domain reorientation, lattice strain and phase transformation. Lastly, we also show the occurrence of the three phenomena and persistence of their correlation in the weak field regime.
Latent heat in uniaxially stressed KMnF3 ferroelastic crystal
NASA Astrophysics Data System (ADS)
Romero, F. J.; Gallardo, M. C.; Jimenez, J.; del Cerro, J.; Salje, E. K. H.
2000-05-01
The influence of weak uniaxial stress on both the latent heat and the coexistence interval of the ferroelastic phase transition of KMnF3 has been measured using a sensitive conduction calorimeter. The latent heat of the sample without stress is 0.129 J g-1 and, in the range of \\mbox{0-12} bar, it increases weakly with the stress. The width of the interval where the latent heat appears increases with stress, with an apparently larger coexistence interval. Heating and cooling processes show different kinetic behaviours. On cooling, the maximum of the differential thermal analysis traces splits into two peaks when a uniaxial stress is applied, which is related to the formation of ferroelastic domain patterns.
Morozov, Maxim I. Einarsrud, Mari-Ann; Tolchard, Julian R.; Grande, Tor; Geiger, Philipp T.; Webber, Kyle G.; Damjanovic, Dragan
2015-10-28
Despite the technological importance of hard and soft PZT, Pb(Zr,Ti)O{sub 3}, ceramics, the mechanisms of ferroelectric hardening and softening remain widely discussed in the literature. The hardening and softening phenomena have traditionally been investigated in relation with dielectric manifestations such as aging of the dielectric susceptibility and constriction of the polarization-electric field hysteresis loop. Here, we present a systematic investigation of the ferroelectric and ferroelastic properties of soft and hard PZT in both the tetragonal and rhombohedral phases. A particular focus has been devoted to ferroelastic domain switching by characterizing the macroscopic mechanical constitutive behavior and in-situ synchrotron X-ray diffraction during compression. It is demonstrated that variation of the ordering state of point defects in PZT ceramics affects the switching behavior of both ferroelectric and ferroelastic domains under mechanical or electrical fields. Softening of the mechanical and electrical properties of originally hard PZT ceramics was conferred by quenching the materials from above the Curie temperature. The present findings are discussed with respect to the current understanding of hardening-softening transitions in ferroelectric materials.
Transverse Domain Wall Profile for Spin Logic Applications
Goolaup, S.; Ramu, M.; Murapaka, C.; Lew, W. S.
2015-01-01
Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement. PMID:25900455
Nanoscale thermoelectrical detection of magnetic domain wall propagation
NASA Astrophysics Data System (ADS)
Krzysteczko, Patryk; Wells, James; Fernández Scarioni, Alexander; Soban, Zbynek; Janda, Tomas; Hu, Xiukun; Saidl, Vit; Campion, Richard P.; Mansell, Rhodri; Lee, Ji-Hyun; Cowburn, Russell P.; Nemec, Petr; Kazakova, Olga; Wunderlich, Joerg; Schumacher, Hans Werner
2017-06-01
In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DWs) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, require complex instrumentation, or can only be applied on specific materials. Here we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial accuracy below 20 nm is comparable to the DW width in typical metallic PMA systems.
Spatiotemporal Patterns in Ultraslow Domain Wall Creep Dynamics.
Ferrero, Ezequiel E; Foini, Laura; Giamarchi, Thierry; Kolton, Alejandro B; Rosso, Alberto
2017-04-07
In the presence of impurities, ferromagnetic and ferroelectric domain walls slide only above a finite external field. Close to this depinning threshold, they proceed by large and abrupt jumps called avalanches, while, at much smaller fields, these interfaces creep by thermal activation. In this Letter, we develop a novel numerical technique that captures the ultraslow creep regime over huge time scales. We point out the existence of activated events that involve collective reorganizations similar to avalanches, but, at variance with them, display correlated spatiotemporal patterns that resemble the complex sequence of aftershocks observed after a large earthquake. Remarkably, we show that events assemble in independent clusters that display at large scales the same statistics as critical depinning avalanches. We foresee these correlated dynamics being experimentally accessible by magnetooptical imaging of ferromagnetic films.
Spatiotemporal Patterns in Ultraslow Domain Wall Creep Dynamics
NASA Astrophysics Data System (ADS)
Ferrero, Ezequiel E.; Foini, Laura; Giamarchi, Thierry; Kolton, Alejandro B.; Rosso, Alberto
2017-04-01
In the presence of impurities, ferromagnetic and ferroelectric domain walls slide only above a finite external field. Close to this depinning threshold, they proceed by large and abrupt jumps called avalanches, while, at much smaller fields, these interfaces creep by thermal activation. In this Letter, we develop a novel numerical technique that captures the ultraslow creep regime over huge time scales. We point out the existence of activated events that involve collective reorganizations similar to avalanches, but, at variance with them, display correlated spatiotemporal patterns that resemble the complex sequence of aftershocks observed after a large earthquake. Remarkably, we show that events assemble in independent clusters that display at large scales the same statistics as critical depinning avalanches. We foresee these correlated dynamics being experimentally accessible by magnetooptical imaging of ferromagnetic films.
Depinning transition of a domain wall in ferromagnetic films
Xi, Bin; Luo, Meng -Bo; Vinokur, Valerii M.; ...
2015-09-14
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe non-conventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. In addition, we observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius andmore » conventional Arrhenius-type DW motions.« less
Depinning transition of a domain wall in ferromagnetic films
Xi, Bin; Luo, Meng -Bo; Vinokur, Valerii M.; Hu, Xiao
2015-09-14
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe non-conventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. In addition, we observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius and conventional Arrhenius-type DW motions.
BPS domain walls in {N}=4 supergravity and dual flows
NASA Astrophysics Data System (ADS)
Cassani, Davide; Dall'Agata, Gianguido; Faedo, Anton F.
2013-03-01
We establish the conditions for supersymmetric domain wall solutions to {N}=4 gauged supergravity in five dimensions. These read as BPS first-order equations for the warp factor and the scalar fields, driven by a superpotential and supplemented by a set of constraints that we specify in detail. Then we apply our results to certain consistent truncations of IIB supergravity, thus exploring their dual field theory renormalization group flows. We find a universal flow deforming superconformal theories on D3-branes at Calabi-Yau cones. Moreover, we obtain a superpotential for the solution corresponding to the baryonic branch of the Klebanov-Strassler theory, as well as the superpotential for the flow describing D3 and wrapped D5-branes on the resolved conifold.
Coupled domain wall oscillations in magnetic cylindrical nanowires
Murapaka, Chandrasekhar; Goolaup, S.; Purnama, I.; Lew, W. S.
2015-02-07
We report on transverse domain wall (DW) dynamics in two closely spaced cylindrical nanowires. The magnetostatically coupled DWs are shown to undergo an intrinsic oscillatory motion along the nanowire length in addition to their default rotational motion. In the absence of external forces, the amplitude of the DW oscillation is governed by the change in the frequency of the DW rotation. It is possible to sustain the DW oscillations by applying spin-polarized current to the nanowires to balance the repulsive magnetostatic coupling. The current density required to sustain the DW oscillation is found to be in the order of 10{sup 5 }A/cm{sup 2}. Morover, our analysis of the oscillation reveals that the DWs in cylindrical nanowires possess a finite mass.
Domain wall oscillations induced by spin torque in magnetic nanowires
Sbiaa, R.; Chantrell, R. W.
2015-02-07
Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.
Magnetic domain wall depinning assisted by spin wave bursts
NASA Astrophysics Data System (ADS)
Woo, Seonghoon; Delaney, Tristan; Beach, Geoffrey S. D.
2017-01-01
Spin waves (SWs) in magnetic structures could potentially be exploited for high-speed, low-power magnonic devices for signal transmission and magnetic logic applications. The short wavelengths and high frequencies of dipole-exchange-mode SWs in metallic ferromagnets make them particularly suitable for nanoscale devices. However, these same characteristics make generation and detection challenging due to the length-scale mismatch of conventional SW interfaces such as microwave striplines. Here we show numerically and experimentally that colliding domain walls (DWs) release energetic spin wave bursts that can couple to and assist depinning of nearby DWs. Hence, DWs can be used as stationary reservoirs of exchange energy that can be efficiently generated, manipulated, and used to release SWs on demand, which can subsequently be detected again using DWs. This work highlights a route towards integrating DWs and SWs for enhanced functionality in spintronics applications.
Depinning Transition of a Domain Wall in Ferromagnetic Films
Xi, Bin; Luo, Meng-Bo; Vinokur, Valerii M.; Hu, Xiao
2015-01-01
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe nonconventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. We observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius and conventional Arrhenius-type DW motions. PMID:26365753
Role of entropy in domain wall motion in thermal gradients.
Schlickeiser, F; Ritzmann, U; Hinzke, D; Nowak, U
2014-08-29
Thermally driven domain wall (DW) motion caused solely by magnonic spin currents was forecast theoretically and has been measured recently in a magnetic insulator using magneto-optical Kerr effect microscopy. We present an analytical calculation of the DW velocity as well as the Walker breakdown within the framework of the Landau Lifshitz Bloch equation of motion. The temperature gradient leads to a torque term acting on the magnetization where the DW is mainly driven by the temperature dependence of the exchange stiffness, or--in a more general picture--by the maximization of entropy. The existence of this entropic torque term does not rest on the angular momentum transfer from the magnonic spin current. Hence, even DWs in antiferromagnets or compensated ferrimagnets should move accordingly. We further argue that the entropic torque exceeds that of the magnonic spin current.
Magnetic damping: domain wall dynamics versus local ferromagnetic resonance.
Weindler, T; Bauer, H G; Islinger, R; Boehm, B; Chauleau, J-Y; Back, C H
2014-12-05
Magnetic relaxation is one of the dominating features of magnetization dynamics. Depending on the magnetic structure and the experimental approach, different magnitudes of the damping parameter are reported even for a given material. In this study, we experimentally address this issue by accessing the damping parameter in the same magnetic nanotracks using different approaches: local ferromagnetic resonance (α=0.0072) and field-driven domain wall dynamics (α=0.023). The experimental results cannot fully be accounted for by modeling only roughness in micromagnetic simulations. Consequently, we have included nonlocal texture induced damping to the micromagnetic code. We find excellent agreement with the observed increased damping in the vortex structures for the same input Gilbert alpha when texture-induced nonlocal damping is included.
Investigation of dominant spin wave modes by domain walls collision
Ramu, M.; Purnama, I.; Goolaup, S.; Chandra Sekhar, M.; Lew, W. S.
2014-06-28
Spin wave emission due to field-driven domain wall (DW) collision has been investigated numerically and analytically in permalloy nanowires. The spin wave modes generated are diagonally symmetric with respect to the collision point. The non-propagating mode has the highest amplitude along the middle of the width. The frequency of this mode is strongly correlated to the nanowire geometrical dimensions and is independent of the strength of applied field within the range of 0.1 mT to 1 mT. For nanowire with film thickness below 5 nm, a second spin wave harmonic mode is observed. The decay coefficient of the spin wave power suggests that the DWs in a memory device should be at least 300 nm apart for them to be free of interference from the spin waves.
Investigation of dominant spin wave modes by domain walls collision
NASA Astrophysics Data System (ADS)
Ramu, M.; Purnama, I.; Goolaup, S.; Chandra Sekhar, M.; Lew, W. S.
2014-06-01
Spin wave emission due to field-driven domain wall (DW) collision has been investigated numerically and analytically in permalloy nanowires. The spin wave modes generated are diagonally symmetric with respect to the collision point. The non-propagating mode has the highest amplitude along the middle of the width. The frequency of this mode is strongly correlated to the nanowire geometrical dimensions and is independent of the strength of applied field within the range of 0.1 mT to 1 mT. For nanowire with film thickness below 5 nm, a second spin wave harmonic mode is observed. The decay coefficient of the spin wave power suggests that the DWs in a memory device should be at least 300 nm apart for them to be free of interference from the spin waves.
Domain wall seeds in CSO-gauged supergravity
NASA Astrophysics Data System (ADS)
Dorronsoro, Juan Diaz; Erbin, Harold; Van Riet, Thomas
2017-06-01
Gravitational domain wall solutions in gauged supergravity are often constructed within truncations that do not include vectors. As a consequence the gauge group is only a global symmetry of this truncation. The consistency of the truncation requires the restriction to solutions with vanishing Noether charge under this global symmetry, since otherwise vector fields are sourced. We show that this has interesting consequences for the orbit structure of the solutions under the global symmetries. We investigate this for CSO( p, q, r)-gaugings in various dimensions with scalar fields truncated to the SL(n,R)/SO(n) subcoset. We prove that the seed solution — which generates all other solutions using only global transformations — has a diagonal coset matrix. This means that there exists a transformation at the boundary of the geometry that diagonalises the coset matrix and that this same transformation also diagonalises the whole flow as a consequence of the vanishing charge.
Phase field simulation of domain switching dynamics in multiaxial lead zirconate titanate thin films
NASA Astrophysics Data System (ADS)
Britson, Jason
The defining characteristic of ferroelectric materials is their ability to be switched between energetically equivalent polarization states. This behavior has led to an interest in ferroelectrics for a wide range of bulk and thin film applications such as mechanical actuators and ferroelectric random access memory devices. Ferroelectric switching depends on domain wall motion, however, and is critically influenced by the existence of defects such as dislocations and preexisting domains. Domain wall motion in thin film applications can be controlled by individual local defects due to the reduced length scale of the system. This dissertation describes the impact of preexisting ferroelastic domains and misfits dislocations in coherent (001)-oriented Pb(Zr0.2,Ti0.8)O3 (PZT) thin films on the switching response and domain structure. A phase field model based on the Landau-Ginzburg-Devonshire theory that accounts for the electrostatic and mechanical interactions is used to describe domain structures in ferroelectric PZT thin films. To solve the governing equations a semi-implicit Fourier-Spectral scheme is developed that accommodates boundary conditions appropriate to the thin film geometry. Errors are reduced in the solutions at the film edges through extensions to the model developed to correct the Fourier transform around stationary discontinuities at the thin film edges. This correction is shown to result in increased accuracy of the phase field model needed to appropriately describe dynamic switching responses in the thin film. Investigation of switching around preexisting ferroelastic domains showed these defects are strong obstacles to switching in PZT thin films. Directly above the ferroelastic domain the magnitude of the required nucleation bias underneath a tip-like electrode was found to be elevated compared to the required bias far from the domain. Locally both the piezoelectric and dielectric responses of the thin film were found to be suppressed, which is
Theoretical study of magnetic domain walls through a cobalt nanocontact
NASA Astrophysics Data System (ADS)
Balogh, László; Palotás, Krisztián; Udvardi, László; Szunyogh, László; Nowak, Ulrich
2012-07-01
To calculate the magnetic ground state of nanoparticles we present a self-consistent first-principles method in terms of a fully relativistic embedded cluster multiple scattering Green's function technique. Based on the derivatives of the band energy, a Newton-Raphson algorithm is used to find the ground-state configuration. The method is applied to a cobalt nanocontact that turned out to show a cycloidal domain wall configuration between oppositely magnetized leads. We found that a wall of cycloidal spin structure is about 30 meV lower in energy than the one of helical spin structure. A detailed analysis revealed that the uniaxial on-site anisotropy of the central atom is mainly responsible to this energy difference. This high uniaxial anisotropy energy is accompanied by a huge enhancement and anisotropy of the orbital magnetic moment of the central atom. By varying the magnetic orientation at the central atom, we identified the term related to exchange couplings (Weiss-field term), various on-site anisotropy terms, and also those due to higher order spin interactions.
Electric field induced domain-wall dynamics: Depinning and chirality switching
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Dusad, Ritika; Hoffman, Silas; Tserkovnyak, Yaroslav; Alzate, Juan G.; Amiri, Pedram Khalili; Wang, Kang L.
2013-12-01
We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Néel and Bloch domain walls in an elliptical MTJ. Furthermore, we develop a phenomenological model of a quasi-one-dimensional domain wall confined by a parabolic potential and show that, near the Néel-to-Bloch-wall transition, a pulsed electric field induces precessional domain-wall motion which can be used to reverse the chirality of a Néel wall and even depin it. This domain-wall motion controlled by electric fields, in lieu of applied current, may provide a model for ultralow-power domain-wall memory and logic devices.
Measurement of magnetic domain wall width using energy-filtered Fresnel images.
Lloyd, S J; Loudon, J C; Midgley, P A
2002-08-01
Magnetic domain walls in Nd2Fe14B have been examined using a series of energy-filtered Fresnel images in the field emission gun transmission electron microscope (FEGTEM). We describe the changes in the intensity distribution of the convergent wall image as a function of defocus, foil thickness and domain wall width. The effect of tilted domain walls and beam convergence on the fringe pattern is also discussed. A comparison of the experimental intensity profile with that from simulations allows the domain wall width to be determined. Measurement of very narrow walls is made possible only by using a relatively thick foil, which necessitates energy-filtering to allow quantitative comparison with simulations. The magnetic domain wall width in Nd2Fe14B was found to be 3 +/- 2 nm.
Thomas, Luc; Hayashi, Masamitsu; Moriya, Rai; Rettner, Charles; Parkin, Stuart
2012-05-01
Head-to-head and tail-to-tail magnetic domain walls in nanowires behave as free magnetic monopoles carrying a single magnetic charge. Since adjacent walls always carry opposite charges, they attract one another. In most cases this long-range attractive interaction leads to annihilation of the two domain walls. Here, we show that, in some cases, a short-range repulsive interaction suppresses annihilation of the walls, even though the lowest energy state is without any domain walls. This repulsive interaction is a consequence of topological edge defects that have the same winding number. We show that the competition between the attractive and repulsive interactions leads to the formation of metastable bound states made up of two or more domain walls. We have created bound states formed from up to eight domain walls, corresponding to the magnetization winding up over four complete 360° rotations.
High domain wall velocities via spin transfer torque using vertical current injection.
Metaxas, Peter J; Sampaio, Joao; Chanthbouala, André; Matsumoto, Rie; Anane, Abdelmadjid; Fert, Albert; Zvezdin, Konstantin A; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Maehara, Hiroki; Tsunekawa, Koji; Cros, Vincent; Grollier, Julie
2013-01-01
Domain walls, nanoscale transition regions separating oppositely oriented ferromagnetic domains, have significant promise for use in spintronic devices for data storage and memristive applications. The state of these devices is related to the wall position and thus rapid operation will require a controllable onset of domain wall motion and high speed wall displacement. These processes are traditionally driven by spin transfer torque due to lateral injection of spin polarized current through a ferromagnetic nanostrip. However, this geometry is often hampered by low maximum wall velocities and/or a need for prohibitively high current densities. Here, using time-resolved magnetotransport measurements, we show that vertical injection of spin currents through a magnetic tunnel junction can drive domain walls over hundreds of nanometers at ~500 m/s using current densities on the order of 6 MA/cm(2). Moreover, these measurements provide information about the stochastic and deterministic aspects of current driven domain wall mediated switching.
High domain wall velocities via spin transfer torque using vertical current injection
Metaxas, Peter J.; Sampaio, Joao; Chanthbouala, André; Matsumoto, Rie; Anane, Abdelmadjid; Fert, Albert; Zvezdin, Konstantin A.; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Maehara, Hiroki; Tsunekawa, Koji; Cros, Vincent; Grollier, Julie
2013-01-01
Domain walls, nanoscale transition regions separating oppositely oriented ferromagnetic domains, have significant promise for use in spintronic devices for data storage and memristive applications. The state of these devices is related to the wall position and thus rapid operation will require a controllable onset of domain wall motion and high speed wall displacement. These processes are traditionally driven by spin transfer torque due to lateral injection of spin polarized current through a ferromagnetic nanostrip. However, this geometry is often hampered by low maximum wall velocities and/or a need for prohibitively high current densities. Here, using time-resolved magnetotransport measurements, we show that vertical injection of spin currents through a magnetic tunnel junction can drive domain walls over hundreds of nanometers at ~500 m/s using current densities on the order of 6 MA/cm2. Moreover, these measurements provide information about the stochastic and deterministic aspects of current driven domain wall mediated switching. PMID:23670402
Domain walls in finite-width nanowires with interfacial Dzyaloshinskii-Moriya interaction
NASA Astrophysics Data System (ADS)
DeJong, M. D.; Livesey, K. L.
2017-02-01
It is widely known that the interfacial Dzyaloshinskii-Moriya interaction (DMI) may stabilize Néel walls rather than Bloch walls in magnetic thin films. When the DMI is weak, it results in a "tilted" Bloch wall. However, for most applications, domain walls are in nanowires rather than thin films. Here we present a semianalytic two-parameter calculation for the static domain wall in a nanowire of finite width and thickness, with DMI. The DMI strength that is needed to force a Néel wall is smaller in nanowires than in films due to demagnetizing energy. Even nanowires that are hundreds of nanometers wide may have different domain wall solutions than thin films and so their finite size must be considered. The impact of this result on current experiments is briefly discussed. We extend the model to show that applying a weak magnetic field allows the domain wall type to be tuned.
Coupled Néel domain wall motion in sandwiched perpendicular magnetic anisotropy nanowires.
Purnama, I; Kerk, I S; Lim, G J; Lew, W S
2015-03-04
The operating performance of a domain wall-based magnetic device relies on the controlled motion of the domain walls within the ferromagnetic nanowires. Here, we report on the dynamics of coupled Néel domain wall in perpendicular magnetic anisotropy (PMA) nanowires via micromagnetic simulations. The coupled Néel domain wall is obtained in a sandwich structure, where two PMA nanowires that are separated by an insulating layer are stacked vertically. Under the application of high current density, we found that the Walker breakdown phenomenon is suppressed in the sandwich structure. Consequently, the coupled Néel domain wall of the sandwich structure is able to move faster as compared to individual domain walls in a single PMA nanowire.
Komine, Takashi Aono, Tomosuke
2016-05-15
We demonstrate current-induced domain wall motion in bilayer nanowire with synthetic antiferromagnetic (SAF) coupling by modeling two body problems for motion equations of domain wall. The influence of interlayer exchange coupling and magnetostatic interactions on current-induced domain wall motion in SAF nanowires was also investigated. By assuming the rigid wall model for translational motion, the interlayer exchange coupling and the magnetostatic interaction between walls and domains in SAF nanowires enhances domain wall speed without any spin-orbit-torque. The enhancement of domain wall speed was discussed by energy distribution as a function of wall angle configuration in bilayer nanowires.
Domain wall pinning in amorphous CoZrNb films
NASA Astrophysics Data System (ADS)
Guyot, M.; Rouabhi, M.; Krishnan, R.; Porte, M.; Niedoba, H.; Cagan, V.
1993-05-01
A series of CoZrNb amorphous films, with thickness t ranging from 200 to 630 nm, has been studied by using several techniques: Kerr imaging, dc and audio frequency hysteresis loops, field dependence of the permeability, torque balance, broadband frequency susceptometer (1 kHz≤f≤500 MHz). Only samples with t≤500 nm have simple domain structures typical of an in-plane anisotropy (with a small dispersion of the easy axis). Although domain walls (DW) are visible, they do not contribute to the initial permeability in the observed frequency range (even in the favorable case where the magnetic field is parallel to the easy axis), but they do play a role on the irreversible magnetization processes as shown by the existence of a critical field Hcr, typical of the onset of irreversible DW motion. These observations are consistant with a model which assumes that the DW are pinned at the film surfaces: the calculations give a negligible DW bulging contribution to the initial permeability, and predict the occurence of a DW unpinning field, thickness dependent as observed.
Current-driven dynamics of chiral ferromagnetic domain walls.
Emori, Satoru; Bauer, Uwe; Ahn, Sung-Min; Martinez, Eduardo; Beach, Geoffrey S D
2013-07-01
In most ferromagnets the magnetization rotates from one domain to the next with no preferred handedness. However, broken inversion symmetry can lift the chiral degeneracy, leading to topologically rich spin textures such as spin spirals and skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here we show that in ultrathin metallic ferromagnets sandwiched between a heavy metal and an oxide, the DMI stabilizes chiral domain walls (DWs) whose spin texture enables extremely efficient current-driven motion. We show that spin torque from the spin Hall effect drives DWs in opposite directions in Pt/CoFe/MgO and Ta/CoFe/MgO, which can be explained only if the DWs assume a Néel configuration with left-handed chirality. We directly confirm the DW chirality and rigidity by examining current-driven DW dynamics with magnetic fields applied perpendicular and parallel to the spin spiral. This work resolves the origin of controversial experimental results and highlights a new path towards interfacial design of spintronic devices.
Domain-wall oscillations studies by time-resolved soft x-ray mircorscopy
Bocklage, L.; Kruger, B.; Eiselt, R.; Bolte, M.; Fischer, P.; Meier, G.
2009-03-25
Fast magnetization dynamics in the micro- and nanometer regime are an interesting field of research. On these length scales magnetic structures can be designed to contain a single vortex or a single domain wall. Both size and speed of these patterns are of great interest in todays research for prospective non-volatile data storage devices. Especially the possibility to move domain-walls by spin-polarized current gained a lot of interest. Magnetic configurations can be imaged by soft X-ray magnetic microscopy with a spatial resolution down to 15 nm. By a stroboscopic pump and probe measurement scheme a temporal resolution below 100 ps is achieved. This provides the opportunity to directly image changes in magnetic domains and domain-wall motion. We image oscillations of a single domain wall in a confining potential in time steps of 200 ps by time resolved X-ray microscopy at the full-field soft X-ray transmission microscope at the Advanced Light Source in Berkeley (beamline 6.1.2). Domain walls are prepared in permalloy nanostructures with a restoring potential. The oscillation of a 180{sup o} domain wall is triggered by nanosecond current pulses. The spin-polarized current and the accompanying Oersted field can contribute to the motion of the wall. By analysis of the distinct domain-wall dynamics the dominant contribution is determined. In our geometry the motion of the wall is determined by the Oersted field although the spin-polarized current directly flows through the ferromagnetic structure. An analytical model of a rigid particle precisely describes the domain-wall motion. Oscillations are studied for different pulse length and amplitudes. From the observed oscillations we extract the driving force, the confining potential, and the domain-wall mass. Nonharmonic terms determine the motion of the wall. The influence of the nonharmonic potential is studied by looking at various phase spaces of the domain-wall motion.
Nonstationary current-driven dynamics of vortex domain walls in films with in-plane anisotropy
NASA Astrophysics Data System (ADS)
Dubovik, M. N.; Filippov, B. N.; Korzunin, L. G.
2017-02-01
Micromagnetic simulation of a current-driven vortex domain wall motion in a film with in-plane anisotropy was carried out. The current density values j >jc were considered corresponding to the nonstationary motion, with the domain wall structure dynamic transformation occurred. A nonlinear dependence of the jc value on the film thickness was obtained. The nonstationary motion regime existence restricted the possibility to increase the domain wall velocity by increasing j and decreasing the damping parameter.
Normal modes of magnetic domain wall motion in a confined stripe domain lattice
Spreen, J.H.; Argyle, B.E.
1982-06-01
We report the observation of standing wave modes in an array of stripe domains confined by a pair of parallel cracks in a Gd, Ga:YIG film. These modes appear in the response spectrum of the confined lattice as shallow minima or maxima at frequencies lower than that of the usual domain wall resonance peak. A simple model, analogous to the forced response of a membrane clamped at the edges, fits the spatial patterns of wall motion observed at the frequencies of the maxima and minima. Experimental frequency-wave vector values, interpreted with guidance from this analogy, provide the first experimental dispersion curve for a stripe domain lattice. We compare this result with recent theoretical calculations. The experimental value of the uniform mode frequency is 41.5 +- 0.2 MHz, with a long wavelength group velocity of 330 +- 50 m/sec. A surprising conclusion from the observed extrema of the spatial patterns is that the damping of the waves is an order of magnitude less than expected from the damping of the uniform mode. The estimated decay length for a propagating wave is 400 ..mu...
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Braden, Jonathan; Bond, J. Richard; Mersini-Houghton, Laura
2015-08-26
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Braden, Jonathan; Bond, J. Richard; Mersini-Houghton, Laura E-mail: bond@cita.utoronto.ca
2015-08-01
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Vogel, J; Bonfim, M; Rougemaille, N; Boulle, O; Miron, I M; Auffret, S; Rodmacq, B; Gaudin, G; Cezar, J C; Sirotti, F; Pizzini, S
2012-06-15
Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO(x)) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low "mass" of these domain walls is attributed to the combination of their narrow width and high damping parameter α. Such a small inertia should allow accurate control of domain wall motion by tuning the duration and amplitude of the current pulses.
Dynamic effects of quenched disorder on domain wall motion in magnetic nanowires
NASA Astrophysics Data System (ADS)
He, Y. Y.; Zheng, B.; Zhou, N. J.
2016-10-01
The domain wall dynamics in magnetic nanowires is numerically studied with the Landau-Lifshitz-Gilbert equation. Below the Walker breakdown threshold, the domain wall presents a stable propagation, while above the threshold where the retrograde mode dominates, the oscillation period is controlled by the external field and anisotropy. More importantly, the dynamic effects of quenched disorder on the domain wall motion are explored. A continuous pinning-depinning phase transition is detected. The dynamic scaling form is analyzed with the data collapse of the domain wall velocity, and both the static and dynamic critical exponents are extracted.
Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy
NASA Astrophysics Data System (ADS)
Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.
2017-08-01
We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive—atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.
Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G
2017-08-23
We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
Driver, S L; Herrero-Albillos, J; Bonilla, C M; Bartolomé, F; García, L M; Howard, C J; Carpenter, M A
2014-02-05
Magnetic phase transitions in RCo2 Laves phases with R as a rare earth element are accompanied by changes in crystallographic space group. For purely structural transitions they would be described as improper ferroelastic and therefore fulfil the condition for multiferroic phase transitions in combining two out of three properties, ferro/antiferromagnetism, ferroelectricity and ferroelasticity. Here lattice parameter data from the literature and new measurements of elastic and anelastic properties, by resonant ultrasound spectroscopy, for NdCo2 and ErCo2 have been analysed from this perspective. The temperature dependence of symmetry-breaking shear strains is consistent with the cubic ↔ tetragonal transition in NdCo2 being close to tricritical in character and the cubic ↔ rhombohedral transition in ErCo2 being first order. Elastic softening and acoustic loss within the stability ranges of the ferroelastic phases can be understood in terms of a combination of intrinsic softening due to strain/order parameter coupling and ferroelastic twin-wall motion. Softening ahead of the transitions does not fit with standard macroscopic descriptions of dynamic effects from other systems but, rather, in the case of NdCo2, might be attributed to the involvement of a second zone centre order parameter related to a separate instability driven by cooperative Jahn-Teller distortions. In ErCo2, acoustic loss in the temperature interval above the transition point is discussed in terms of a possible tweed microstructure associated with strain coupling to local magnetic ordering. The overall multiferroic behaviour can be understood in terms of a single magnetic order parameter (irrep mΓ+4 of magnetic space group Fd3m1') which couples with a structural order parameter (irrep Γ+3 or Γ+5). The coupling is linear/quadratic which, in the case of two separate instabilities, causes them to combine in a single multiferroic phase transition.
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
NASA Astrophysics Data System (ADS)
McQuaid, Raymond G. P.; Campbell, Michael P.; Whatmore, Roger W.; Kumar, Amit; Gregg, J. Marty
2017-05-01
Ferroelectric domain walls constitute a completely new class of sheet-like functional material. Moreover, since domain walls are generally writable, erasable and mobile, they could be useful in functionally agile devices: for example, creating and moving conducting walls could make or break electrical connections in new forms of reconfigurable nanocircuitry. However, significant challenges exist: site-specific injection and annihilation of planar walls, which show robust conductivity, has not been easy to achieve. Here, we report the observation, mechanical writing and controlled movement of charged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl. Walls are straight, tens of microns long and exist as a consequence of elastic compatibility conditions between specific domain pairs. We show that site-specific injection of conducting walls of up to hundreds of microns in length can be achieved through locally applied point-stress and, once created, that they can be moved and repositioned using applied electric fields.
The increase of the spin-transfer torque threshold current density in coupled vortex domain walls.
Lepadatu, S; Mihai, A P; Claydon, J S; Maccherozzi, F; Dhesi, S S; Kinane, C J; Langridge, S; Marrows, C H
2012-01-18
We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.
Time-resolved imaging of current-induced domain-wall oscillations
Bocklage, Lars; Krueger, Benjamin; Eiselt, Rene; Bolte, Markus; Fischer, Peter; Meier, Guido
2008-10-07
Current-induced domain-wall dynamics is investigated via high-resolution soft x-ray transmission microscopy by a stroboscopic pump-and-probe measurement scheme at a temporal resolution of 200 ps. A 180{sup o} domain wall in a restoring potential of a permalloy microstructure is displaced from its equilibrium position by nanosecond current pulses leading to oscillations with velocities up to 325 m/s. The motion of the wall is described with an analytical model of a rigid domain wall in a nonharmonic potential allowing one to determine the mass of the domain wall. We show that Oersted fields dominate the domain-wall dynamics in our geometry.
Persistent conductive footprints of 109° domain walls in bismuth ferrite films
Stolichnov, I.; Iwanowska, M.; Colla, E.; Setter, N.; Ziegler, B.; Gaponenko, I.; Paruch, P.; Huijben, M.; Rijnders, G.
2014-03-31
Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109° domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall “footprints” is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization.
NASA Astrophysics Data System (ADS)
Pirro, P.; Koyama, T.; Brächer, T.; Sebastian, T.; Leven, B.; Hillebrands, B.
2015-06-01
The interaction of propagating dipolar spin waves with magnetic domain walls is investigated in square-shaped microstructures patterned from the Heusler compound Co2Mn0.6Fe0.4Si. Using magnetic force microscopy, the reversible preparation of a Landau state with four magnetic domains separated by Néel domain walls is confirmed. A local spin-wave excitation using a microstructured antenna is realized in one of the domains. It is shown by Brillouin light scattering microscopy that the domain structure in the remanence state has a strong influence on the spin-wave excitation and propagation. The domain walls strongly reflect the spin waves and can be used as spin-wave reflectors. A comparison with micromagnetic simulations shows that the strong reflection is due to the long-range dipolar interaction which has important implications for the use of these spin waves for exerting an all-magnonic spin-transfer torque.
Transverse field-induced nucleation pad switching modes during domain wall injection
Bryan, M. T.; Fry, P. W.; Schrefl, T.; Gibbs, M. R. J.; Allwood, D. A.; Im, M.-Y.; Fischer, P.
2010-03-12
We have used magnetic transmission X-ray microscopy (M-TXM) to image in-field magnetization configurations of patterned Ni{sub 80}Fe{sub 20} domain wall 'injection pads' and attached planar nanowires. Comparison with micromagnetic simulations suggests that the evolution of magnetic domains in rectangular injection pads depends on the relative orientation of closure domains in the remanent state. The magnetization reversal pathway is also altered by the inclusion of transverse magnetic fields. These different modes explain previous results of domain wall injection into nanowires. Even more striking was the observation of domain walls injecting halfway across the width of wider (>400 nm wide) wires but over wire lengths of several micrometers. These extended Neel walls can interact with adjacent nanowires and cause a switching in the side of the wire undergoing reversal as the domain wall continues to expand.
Current at domain walls, roughly speaking: nanoscales studies of disorder roughening and conduction
NASA Astrophysics Data System (ADS)
Paruch, Patrycja
2013-03-01
Domain walls in (multi)ferroic materials are the thin elastic interfaces separating regions with different orientations of magnetisation, electric polarisation, or spontaneous strain. Understanding their behaviour, and controlling domain size and stability, is key for their integration into applications, while fundamentally, domain walls provide an excellent model system in which the rich physics of disordered elastic interfaces can be accesses. In addition, domain walls can present novel properties, quite different from those of their parent materials, making them potentially useful as active components in future nano-devices. Here, we present our atomic force microscopy studies of ferroelectric domain walls in epitaxial Pb(Zr0.2Ti0.8)O3 and BiFeO3 thin films, in which we use piezorespose force microscopy to show unusual domain wall roughening behaviour, with very localised disorder regions in the sample leading to a complex, multi-affine scaling of the domain wall shape. We also show the effects of temperature, environmental conditions, and defects on switching dynamics and domain wall roughness. We combine these observations with parallel conductive-tip atomic force microscopy current measurements, which also show highly localised variations in conduction, and highlight the key role played by oxygen vacancies in the observed domain wall conduction.
Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy.
Franken, J H; Swagten, H J M; Koopmans, B
2012-08-01
The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation. The domain walls are defined between domains with an out-of-plane (perpendicular) magnetization, which allows us to route domain walls along arbitrary in-plane paths using a time-varying applied magnetic field with fixed orientation. In addition, this ratchet-like motion causes the domain walls to lock to discrete positions along these paths, which is useful for digital devices. As a proof-of-principle experiment we demonstrate the continuous propagation of two domain walls along a closed-loop path in a platinum/cobalt/platinum strip.
Pretransformation strain modulations in proper ferroelastics
NASA Astrophysics Data System (ADS)
Saxena, A.; Barsch, G. R.
1993-06-01
Within the framework of the Landau-Ginzburg model for the O h-D 4 h proper ferroelastic transformation pretransformation structural modulations may arise as (possibly defect-stabilized) pseudo-critical fluctuations that can be described by an effective elastic ø 4 model. Here we show that the strain amplitude and temperature dependence of an intermediate tetragonal phase observed above and concurrently with the face-centered cubic to face-centered cubic to face-centered tetragonal transition in Fe 0.7Pd 0.3 can be understood semi-quantitatively in terms of the crossover behavior from the Ising to the displacive limit by applying the crossover phase diagram of Beale, Sarker and Krumhansl (obtained from a renormalization group study of structural phase transitions in 1D and 2D) to the effective ø 4 model. The fact that this type of pretransformation modulation has not been observed with X-rays for other ferroelastic transformations (e.g. InTl alloys) can be attributed to large values of the order parameter gradient coefficient in these cases
Wallace, Thomas K; Colman, Ross H; McLaughlin, Abbie C
2013-06-14
A study of the magnetic and structural properties of the double perovskite Ba2GdMoO6 has been performed. The crystal structure distorts from the ideal cubic (Fm3m) structure to the tetragonal space group I4/m at 220 K, before undergoing a second distortion to a triclinic system (I1) at 80 K. The phase transition to triclinic symmetry is also evident in magnetic susceptibility measurements. The variable temperature synchrotron powder X-ray diffraction results reveal that Ba2GdMoO6 is ferroelastic, with the onset of ferroelastic domain formation occurring at the cubic-tetragonal phase transition. A number of Rietveld refinement techniques for modelling diffuse scattering from ferroelastic domain boundaries have been explored.
Domain walls and bubble droplets in immiscible binary Bose gases
NASA Astrophysics Data System (ADS)
Filatrella, G.; Malomed, Boris A.; Salerno, Mario
2014-10-01
The existence and stability of domain walls (DWs) and bubble-droplet (BD) states in binary mixtures of quasi-one-dimensional ultracold Bose gases with inter- and intraspecies repulsive interactions is considered. Previously, DWs were studied by means of coupled systems of Gross-Pitaevskii equations (GPEs) with cubic terms, which model immiscible binary Bose-Einstein condensates (BECs). We address immiscible BECs with two- and three-body repulsive interactions, as well as binary Tonks-Girardeau (TG) gases, using systems of GPEs with cubic and quintic nonlinearities for the binary BEC, and coupled nonlinear Schrödinger equations with quintic terms for the TG gases. Exact DW solutions are found for the symmetric BEC mixture, with equal intraspecies scattering lengths. Stable asymmetric DWs in the BEC mixtures with dissimilar interactions in the two components, as well as of symmetric and asymmetric DWs in the binary TG gas, are found by means of numerical and approximate analytical methods. In the BEC system, DWs can be easily put in motion by phase imprinting. Combining a DW and anti-DW on a ring, we construct BD states for both the BEC and TG models. These consist of a dark soliton in one component (the "bubble"), and a bright soliton (the "droplet") in the other. In the BEC system, these composite states are mobile, too.
Depinning of domain walls in permalloy nanowires with asymmetric notches
Gao, Y.; You, B.; Ruan, X. Z.; Liu, M. Y.; Yang, H. L.; Zhan, Q. F.; Li, Z.; Lei, N.; Zhao, W. S.; Pan, D. F.; Wan, J. G.; Wu, J.; Tu, H. Q.; Wang, J.; Zhang, W.; Xu, Y. B.; Du, J.
2016-01-01
Effective control of the domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental research and potential application in spintronic devices. In this work, a series of permalloy nanowires with an asymmetric notch in the middle were fabricated with only varying the width (d) of the right arm from 200 nm to 1000 nm. The detailed pinning and depinning processes of DWs in these nanowires have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, magnetic force microscopy (MFM) and micromagnetic simulation. The experimental results unambiguously exhibit the presence of a DW pinned at the notch in a typical sample with d equal to 500 nm. At a certain range of 200 nm < d < 500 nm, both the experimental and simulated results show that the DW can maintain or change its chirality randomly during passing through the notch, resulting in two DW depinning fields. Those two depinning fields have opposite d dependences, which may be originated from different potential well/barrier generated by the asymmetric notch with varying d. PMID:27600627
Magnetic bead detection using domain wall-based nanosensor
Corte-León, H.; Krzysteczko, P.; Schumacher, H. W.; Manzin, A.; Cox, D.; Antonov, V.; Kazakova, O.
2015-05-07
We investigate the effect of a single magnetic bead (MB) on the domain wall (DW) pinning/depinning fields of a DW trapped at the corner of an L-shaped magnetic nanodevice. DW propagation across the device is investigated using magnetoresistance measurements. DW pinning/depinning fields are characterized in as-prepared devices and after placement of a 1 μm-sized MB (Dynabeads{sup ®} MyOne{sup ™}) at the corner. The effect of the MB on the DW dynamics is seen as an increase in the depinning field for specific orientations of the device with respect to the external magnetic field. The shift of the depinning field, ΔB{sub dep} = 4.5–27.0 mT, is highly stable and reproducible, being significantly above the stochastic deviation which is about 0.5 mT. The shift in the deppinning field is inversely proportional to the device width and larger for small negative angles between the device and the external magnetic field. Thus, we demonstrate that DW-based devices can be successfully used for detection of single micron size MB.
Effect of curvature on domain wall motion in elliptical nanorings
NASA Astrophysics Data System (ADS)
Kaya, Fikriye Idil; Bickel, Jessica; Aidala, Katherine
2014-03-01
Understanding domain wall (DW) motion in ferromagnetic nanostructures is important to realize proposed magnetic data storage and logic devices. We investigate the effect of curvature on DW pinning and motion by studying elliptical rings using micromagnetic simulations. Elliptical rings with constant width have varying curvature, with the lowest curvature at the minor axis, and the greatest curvature at the major axis. DWs can be created at any angular position within the ellipse by the application of an appropriate uniform magnetic field. However, only some of these positions are stable when the field is removed. We study the stability and depinning of the DWs by applying a slowly increasing elliptical magnetic field to determine the magnitude of the field at which the DWs begin to move. By varying the major to minor axis ratio, we examine the effect of curvature on DW pinning. A larger field is required to move DWs in regions of higher curvature (near the major axis) than lower curvature (near the minor axis). Overall, we see that increasing the major to minor axis ratio of elliptical nanorings requires increasing field strength to depin the DWs along the major axis. Work supported in part by NSF DMR-1207924 and NSF CMMI-1025020. Simulations performed at the CNS computational facilities at Harvard University, a member of the NNIN supported by NSF Award No. ECS-0335765.
Magnetic domain wall shift registers for data storage applications
NASA Astrophysics Data System (ADS)
Read, Dan; O'Brien, L.; Zeng, H. T.; Lewis, E. R.; Petit, D.; Sampaio, J.; Thevenard, L.; Cowburn, R. P.
2009-03-01
Data storage devices based on magnetic domain walls (DWs) propagating through permalloy (Py) nanowires have been proposed [Allwood et al. Science 309, 1688 (2005), S. S. Parkin, US Patent 6,834,005 (2004)] and have attracted a great deal of attention. We experimentally demonstrate such a device using shift registers constructed from magnetic NOT gates used in combination with a globally applied rotating magnetic field. We have demonstrated data writing, propagation, and readout in individually addressable Py nanowires 90 nm wide and 10 nm thick. Electrical data writing is achieved using the Oersted field due to current pulses in gold stripes (4 μm wide, 150 nm thick), patterned on top of and perpendicular to the nanowires. The conduit-like properties of the nanowires allow the propagation of data sequences over distances greater than 100 μm. Using spatially resolved magneto-optical Kerr effect (MOKE) measurements we can directly detect the propagation of single DWs in individual nanostructures without requiring data averaging. Electrical readout was demonstrated by detecting the presence of DWs at deliberately introduced pinning sites in the wire.
Bi-directional magnetic domain wall shift register
NASA Astrophysics Data System (ADS)
Read, D. E.; O'Brien, L.; Zeng, H. T.; Lewis, E. R.; Petit, D.; Cowburn, R. P.
2010-03-01
Data storage devices based on magnetic domain walls (DWs) propagating through ferromagnetic nanowires have attracted a great deal of attention in recent years [1,2]. Here we experimentally demonstrate a shift register based on an open-ended chain of ferromagnetic NOT gates. When used in combination with a globally applied magnetic field such devices can support bi-directional data flow [3]. We have demonstrated data writing, propagation, and readout in individually addressable NiFe nanowires 90 nm wide and 10 nm thick. Up to eight data bits are electrically input to the device, stored for extended periods without power supplied to the device, and then output using either a first in first out or a last in first out mode of operation. Compared to traditional electronic transistor-based circuits, the inherent bi-directionality afforded by these DW logic gates offers a range of devices that are reversible and not limited to only one mode of operation. [1] S. S. Parkin, US Patent 6,834,005 (2004) [2] D. A. Allwod, et al., Science 309 (5741), 1688 (2005) [3] L. O'Brien, et al. accepted for publication in APL (2009)
Evidence of domain wall pinning in aluminum substituted cobalt ferrites
NASA Astrophysics Data System (ADS)
Maurya, J. C.; Janrao, P. S.; Datar, A. A.; Kanhe, N. S.; Bhoraskar, S. V.; Mathe, V. L.
2016-08-01
In the present work spinel structured cobalt ferrites with aluminum substitution having composition CoAlxFe2-xO4 (x=0.0, 0.1, 0.2 and 0.3) have been synthesized using chemical co-precipitation method. Their microstructural, magnetic, magnetostriction and magnetoimpedance properties have been investigated. The piezomagnetic coefficient (dλ/dH) obtained from magnetostriction data is found to enhance with 0.1 Al substitutions in place of iron which decreases with further increase of Al content. It is noticed that 0.3 Al substitutions in place of Fe introduces domain wall pinning as evidenced from magnetostriction, magnetoimpedance and dc magnetization data. It is noted that ferrites so prepared using a simple procedure are magnetostrictive in good measure and with the addition of very small amount of non-magnetic aluminum their magnetostriction has shown saturation at relatively low magnetic fields. Such magnetostrictive ferrites find their applications in magnetic sensors and actuators.
Depinning of domain walls in permalloy nanowires with asymmetric notches
NASA Astrophysics Data System (ADS)
Gao, Y.; You, B.; Ruan, X. Z.; Liu, M. Y.; Yang, H. L.; Zhan, Q. F.; Li, Z.; Lei, N.; Zhao, W. S.; Pan, D. F.; Wan, J. G.; Wu, J.; Tu, H. Q.; Wang, J.; Zhang, W.; Xu, Y. B.; Du, J.
2016-09-01
Effective control of the domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental research and potential application in spintronic devices. In this work, a series of permalloy nanowires with an asymmetric notch in the middle were fabricated with only varying the width (d) of the right arm from 200 nm to 1000 nm. The detailed pinning and depinning processes of DWs in these nanowires have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, magnetic force microscopy (MFM) and micromagnetic simulation. The experimental results unambiguously exhibit the presence of a DW pinned at the notch in a typical sample with d equal to 500 nm. At a certain range of 200 nm < d < 500 nm, both the experimental and simulated results show that the DW can maintain or change its chirality randomly during passing through the notch, resulting in two DW depinning fields. Those two depinning fields have opposite d dependences, which may be originated from different potential well/barrier generated by the asymmetric notch with varying d.
Hybrid normal metal/ferromagnetic nanojunctions for domain wall tracking.
Corte-León, Héctor; Krzysteczko, Patryk; Manzin, Alessandra; Schumacher, Hans Werner; Antonov, Vladimir; Kazakova, Olga
2017-07-24
Hybrid normal metal/ferromagnetic, gold/permalloy (Au/Py), nanojunctions are used to investigate magnetoresistance effects and track magnetization spatial distribution in L-shaped Py nanostructures. Transversal and longitudinal resistances are measured and compared for both straight and 90° corner sections of the Py nanostructure. Our results demonstrate that the absolute change in resistance is larger in the case of longitudinal measurements. However, due to the small background resistance, the relative change in the transversal resistance along the straight section is several orders of magnitude larger than the analogous longitudinal variation. These results prove that hybrid nanojunctions represent a significant improvement with respect to previously studied all-ferromagnetic crosses, as they also reduce the pinning potential at the junction and allow probing the magnetization locally. In addition, unusual metastable states with longitudinal domain walls along Py straight sections are observed. Micromagnetic simulations in combination with a magnetotransport model allow interpretation of the results and identification of the observed transitions.
Heat accumulation and all-optical switching by domain wall motion in Co/Pd superlattices.
Hoveyda, F; Hohenstein, E; Smadici, S
2017-06-07
All-optical switching by domain wall motion has been obtained in Co/Pd superlattices with a TiS oscillator. Heat accumulation is part of the switching process for our experimental conditions. Numerical calculations point to a connection between domain wall motion and in-plane heat diffusion.
Spin-wave-driven high-speed domain-wall motions in soft magnetic nanotubes
Yang, Jaehak; Yoo, Myoung-Woo; Kim, Sang-Koog
2015-10-28
We report on a micromagnetic simulation study of interactions between propagating spin waves and a head-to-head domain wall in geometrically confined magnetic nanotubes. We found that incident spin waves of specific frequencies can lead to sufficiently high-speed (on the order of a few hundreds of m/s or higher) domain-wall motions in the same direction as that of the incident spin-waves. The domain-wall motions and their speed vary remarkably with the frequency and the amplitude of the incident spin-waves. High-speed domain-wall motions originate from the transfer torque of spin waves' linear momentum to the domain wall, through the partial or complete reflection of the incident spin waves from the domain wall. This work provides a fundamental understanding of the interaction of the spin waves with a domain wall in the magnetic nanotubes as well as a route to all-magnetic control of domain-wall motions in the magnetic nanoelements.
The profile of the domain walls in amorphous glass-covered microwires
NASA Astrophysics Data System (ADS)
Beck, F.; Rigue, J. N.; Carara, M.
2017-08-01
We have studied the domain wall dynamics in Joule-annealed amorphous glass-covered microwires with positive magnetostriction in the presence of an electric current, in order to evaluate the profile and shape of the moving domain wall. Such microwires are known to present magnetic bi-stability when axially magnetized. The single domain wall dynamics was evaluated under different conditions, under an axially applied stress and an electric current. We have observed the well known increasing of the domain wall damping with the applied stress due to the increase in the magnetoelastic anisotropy and, when the current is applied, depending on the current intensity and direction, a modification on the axial domain wall damping. When the orthogonal motion of the domain wall is considered, we have observed that the associated velocity present a smaller dependence on the applied current intensity. It was observed a modification on both the domain wall shape and length. In a general way, the domain wall evolves from a bell shape to a parabolic shape as the current intensity is increased. The results were explained in terms of the change in the magnetic energy promoted by the additional Oersted field.
Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque
Bhowmik, Debanjan; Nowakowski, Mark E.; You, Long; Lee, OukJae; Keating, David; Wong, Mark; Bokor, Jeffrey; Salahuddin, Sayeef
2015-01-01
Spin-polarized electrons can move a ferromagnetic domain wall through the transfer of spin angular momentum when current flows in a magnetic nanowire. Such current induced control of a domain wall is of significant interest due to its potential application for low power ultra high-density data storage. In previous reports, it has been observed that the motion of the domain wall always happens parallel to the current flow – either in the same or opposite direction depending on the specific nature of the interaction. In contrast, here we demonstrate deterministic control of a ferromagnetic domain wall orthogonal to current flow by exploiting the spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO heterostructure in presence of an in-plane magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Therefore the domain wall motion happens purely due to spin orbit torque. These results represent a completely new degree of freedom in current induced control of a ferromagnetic domain wall. PMID:26139349
Current-induced 360° domain wall motion with Dzyaloshinskii-Moriya interaction
NASA Astrophysics Data System (ADS)
Jin, Chendong; Zhang, Senfu; Zhu, Qiyuan; Liu, Xianyin; Chen, Shujun; Song, Chengkun; Wang, Jianbo; Liu, Qingfang
2016-05-01
By micromagnetic simulation, we investigated the effect of the Dzyaloshinskii-Moriya interaction (DMI) on the static and dynamic characteristics of a 360° domain wall. Simulation results show that both the energy and the size of a 360° domain wall decrease with the increase of DMI intensity. In the presence of DMI, the stable motion of a 360° domain wall can be either along the +x direction or -x direction depending on the sign of the DMI. For stable motion, the maximum velocity of a 360° domain wall is 19.87% larger than that without the DMI. Increasing the current density beyond the Walker threshold, conversion between the 360° domain wall state and the vortex state was observed. Further increasing the current density, the proliferation of 360° domain walls becomes possible. Moreover, the 360° domain wall becomes more flexible and easier to pass a notch by considering the DMI. These findings may offer guidance for the development of 360° domain wall-based racetrack memories.
Current-driven vortex domain wall motion in wire-tube nanostructures
Espejo, A. P.; Vidal-Silva, N.; López-López, J. A.; Goerlitz, D.; Nielsch, K.; Escrig, J.
2015-03-30
We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.
SH3b Cell wall binding domains can enhance anti-staphylococcal activity of endolysin lytic domains.
USDA-ARS?s Scientific Manuscript database
Bacteriophage endolysins are peptidoglycan hydrolases and a potential new source of antimicrobials. A large subset of these proteins contain a C-terminal SH3b_5 cell wall binding domain that has been shown [for some] to be essential for accurate cell wall recognition and subsequent staphylolytic ac...
Murein and pseudomurein cell wall binding domains of bacteria and archaea--a comparative view.
Visweswaran, Ganesh Ram R; Dijkstra, Bauke W; Kok, Jan
2011-12-01
The cell wall, a major barrier protecting cells from their environment, is an essential compartment of both bacteria and archaea. It protects the organism from internal turgor pressure and gives a defined shape to the cell. The cell wall serves also as an anchoring surface for various proteins and acts as an adhesion platform for bacteriophages. The walls of bacteria and archaea are mostly composed of murein and pseudomurein, respectively. Cell wall binding domains play a crucial role in the non-covalent attachment of proteins to cell walls. Here, we give an overview of the similarities and differences in the biochemical and functional properties of the two major murein and pseudomurein cell wall binding domains, i.e., the Lysin Motif (LysM) domain (Pfam PF01476) and the pseudomurein binding (PMB) domain (Pfam PF09373) of bacteria and archaea, respectively.
NASA Astrophysics Data System (ADS)
Lequeux, Steven; Sampaio, Joao; Bortolotti, Paolo; Devolder, Thibaut; Matsumoto, Rie; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Tsunekawa, Koji; Cros, Vincent; Grollier, Julie
2015-11-01
Spin torque resonance has been used to simultaneously probe the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Due to the large associated resistance variations, we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both the domains and the domain wall is doubled compared to the damping value of the host magnetic layer. We estimate the contributions to the damping arising from the dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect, and find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls.
Lequeux, Steven; Sampaio, Joao; Bortolotti, Paolo; Cros, Vincent; Grollier, Julie; Matsumoto, Rie; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Tsunekawa, Koji
2015-11-02
Spin torque resonance has been used to simultaneously probe the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Due to the large associated resistance variations, we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both the domains and the domain wall is doubled compared to the damping value of the host magnetic layer. We estimate the contributions to the damping arising from the dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect, and find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls.
Liu, Shi; Zheng, Fan; Koocher, Nathan Z; Takenaka, Hiroyuki; Wang, Fenggong; Rappe, Andrew M
2015-02-19
Organometal halide perovskites have been intensely studied in the past 5 years, inspired by their certified high photovoltaic power conversion efficiency. Some of these materials are room-temperature ferroelectrics. The presence of switchable ferroelectric domains in methylammonium lead triiodide, CH3NH3PbI3, has recently been observed via piezoresponse force microscopy. Here, we focus on the structural and electronic properties of ferroelectric domain walls in CH3NH3PbX3 (X = Cl, Br, I). We find that organometal halide perovskites can form both charged and uncharged domain walls due to the flexible orientational order of the organic molecules. The electronic band gaps for domain structures possessing 180 and 90° walls are estimated with density functional theory. It is found that the presence of charged domain walls will significantly reduce the band gap by 20-40%, while the presence of uncharged domain walls has no substantial impact on the band gap. We demonstrate that charged domain walls can serve as segregated channels for the motions of charge carriers. These results highlight the importance of ferroelectric domain walls in hybrid perovskites for photovoltaic applications and suggest a possible avenue for device optimization through domain patterning.
Pinning induced by inter-domain wall interactions in planar magnetic nanowires
Hayward, T.J.; Bryan, M.T.; Fry, P.W.; Fundi, P.M.; Gibbs, M.R.J.; Allwood, D.A.; Im, M.-Y.; Fischer, P.
2009-10-30
We have investigated pinning potentials created by inter-domain wall magnetostatic interactions in planar magnetic nanowires. We show that these potentials can take the form of an energy barrier or an energy well depending on the walls' relative monopole moments, and that the applied magnetic fields required to overcome these potentials are significant. Both transverse and vortex wall pairs are investigated and it is found that transverse walls interact more strongly due to dipolar coupling between their magnetization structures. Simple analytical models which allow the effects of inter-domain wall interactions to be estimated are also presented.
Dzyaloshinskii-Moriya domain wall resonance in ferromagnetic nanowires with a spin-transfer torque
Li, Zai-Dong; Liu, Fei; Li, Qiu-Yan; He, P. B.
2015-05-07
We theoretically investigate the current-induced domain wall resonance in ferromagnetic nanowires with a Dzyaloshinskii-Moriya interaction. The adiabatic and nonadiabatic torques distort the wall's internal structure and exert a global pressure on the wall. An effective Newton's equation is obtained analytically for a domain wall moving in one-dimensional potential and subject to a viscous friction and a driving force. Our results demonstrate that the Dzyaloshinskii-Moriya interaction affects the critical current density for depinning the wall, resonance frequency, and amplitude.
Athermal domain-wall creep near a ferroelectric quantum critical point
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-01-01
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point. PMID:26880041
NASA Astrophysics Data System (ADS)
Elder, K. R.; Achim, C. V.; Granato, E.; Ying, S. C.; Ala-Nissila, T.
2016-12-01
We introduce an effective one-mode phase-field crystal model for studying the commensurate-incommensurate transition and domain wall dynamics of the (\\sqrt{3}×\\sqrt{3})R30\\circ phase found in systems such as Xe/Pt(111), or Xe and Kr on graphite. The model allows us to study large systems where the domain walls can be separated over large macroscopic distances and at the same time incorporate the microscopic details of the domain wall structures. The resulting phase diagram shows that an intermediate stripe incommensurate phase always separates the commensurate phase from the honeycomb incommensurate phases. The energy of the domain wall crossing is investigated. We also find that near a step edge, the domain walls tend to align perpendicularly to the step edge, in agreement with recent experimental observations.
Interaction of magnetization and heat dynamics for pulsed domain wall movement with Joule heating
NASA Astrophysics Data System (ADS)
Lepadatu, Serban
2016-10-01
Pulsed domain wall movement is studied here in Ni80Fe20 nanowires on SiO2, using a fully integrated electrostatic, thermoelectric, and micromagnetics solver based on the Landau-Lifshitz-Bloch equation, including Joule heating, anisotropic magneto-resistance, and Oersted field contributions. During the applied pulse, the anisotropic magneto-resistance of the domain wall generates a dynamic heat gradient, which increases the current-driven velocity by up to 15%. Using a temperature-dependent conductivity, significant differences are found between the constant voltage-pulsed and constant current-pulsed domain wall movement: constant voltage pulses are shown to be more efficient at displacing domain walls whilst minimizing the increase in temperature, with the total domain wall displacement achieved over a fixed pulse duration having a maximum with respect to the driving pulse strength.
Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes
Muñoz, Manuel; Prieto, José L.
2011-01-01
Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6–2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes. PMID:22127058
Current-driven magnetic domain wall motion and its real-time detection
NASA Astrophysics Data System (ADS)
Kim, Kab-Jin; Yoshimura, Yoko; Ono, Teruo
2017-08-01
Current-controlled magnetic domain wall motion has opened the possibility of a novel type of shift register memory device, which has been optimistically predicted to replace existing magnetic memories. Owing to this promising prospect, intensive work has been carried out during the last few decades. In this article, we first review the progress in the study of current-induced magnetic domain wall motion. Underlying mechanisms behind the domain wall motion, which have been discovered during last few decades, as well as technological achievements are presented. We then present our recent experimental results on the real-time detection of current-driven multiple magnetic domain wall motion, which directly demonstrates the operation of a magnetic domain wall shift register.
Athermal domain-wall creep near a ferroelectric quantum critical point
NASA Astrophysics Data System (ADS)
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-02-01
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point.
Magnetic Domain Walls as Hosts of Spin Superfluids and Generators of Skyrmions
NASA Astrophysics Data System (ADS)
Kim, Se Kwon; Tserkovnyak, Yaroslav
2017-07-01
A domain wall in a magnet with easy-axis anisotropy is shown to harbor spin superfluid associated with its spontaneous breaking of the U(1) spin-rotational symmetry. The spin superfluid is shown to have several topological properties, which are absent in conventional superfluids. First, the associated phase slips create and destroy Skyrmions to obey the conservation of the total Skyrmion charge, which allows us to use a domain wall as a generator and detector of Skyrmions. Second, the domain wall engenders the emergent magnetic flux for magnons along its length, which are proportional to the spin supercurrent flowing through it, and thereby provides a way to manipulate magnons. Third, the spin supercurrent can be driven by the magnon current traveling across it owing to the spin transfer between the domain wall and magnons, leading to the magnonic manipulation of the spin superfluid. The theory for superfluid spin transport within the domain wall is confirmed by numerical simulations.
Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses
NASA Astrophysics Data System (ADS)
Janda, T.; Roy, P. E.; Otxoa, R. M.; Šobáň, Z.; Ramsay, A.; Irvine, A. C.; Trojanek, F.; Surýnek, M.; Campion, R. P.; Gallagher, B. L.; Němec, P.; Jungwirth, T.; Wunderlich, J.
2017-05-01
Domain wall motion driven by ultra-short laser pulses is a pre-requisite for envisaged low-power spintronics combining storage of information in magnetoelectronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study, we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin-transfer torque acts over a picosecond recombination time of the spin-polarized photo-carriers that only leads to a deformation of the initial domain wall structure. We show that subsequent depinning and micrometre-distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.
Dynamic conductivity of ferroelectric domain walls in BiFeO₃.
Maksymovych, Peter; Seidel, Jan; Chu, Ying Hao; Wu, Pingping; Baddorf, Arthur P; Chen, Long-Qing; Kalinin, Sergei V; Ramesh, Ramamoorthy
2011-05-11
Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO(3) are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.
Domain walls and their experimental signatures in s+is superconductors.
Garaud, Julien; Babaev, Egor
2014-01-10
Arguments were recently advanced that hole-doped Ba(1-x)K(x)Fe2As2 exhibits the s+is state at certain doping. Spontaneous breaking of time-reversal symmetry in the s+is state dictates that it possess domain wall excitations. Here, we discuss what are the experimentally detectable signatures of domain walls in the s+is state. We find that in this state the domain walls can have a dipolelike magnetic signature (in contrast to the uniform magnetic signature of domain walls p+ip superconductors). We propose experiments where quench-induced domain walls can be stabilized by geometric barriers and observed via their magnetic signature or their influence on the magnetization process, thereby providing an experimental tool to confirm the s+is state.
Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes.
Muñoz, Manuel; Prieto, José L
2011-11-29
Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6-2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes.
Athermal domain-wall creep near a ferroelectric quantum critical point.
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-02-16
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point.
Controlling the stability of both the structure and velocity of domain walls in magnetic nanowires
Brandão, J.; Atkinson, D.
2016-08-08
For magnetic nanowire devices, the precise control of both domain wall (DW) motion and pinning behaviour is essential for reliable functional performance. The domain wall velocity and wall structure are typically sensitive to the driving field or spin-polarized current, and the pinning behaviour depends on the walls' structure and chirality, leading to variability in behaviour. Here, a systematic study combining experimental measurements and micromagnetic simulations of planar nanowires with small fixed-angle structural modulations on both edges was undertaken to study the domain wall reversal regime. A phase diagram for the reversal field as a function of modulation amplitude was obtained that shows that three DW reversal regime. A range of field and modulation amplitudes were identified in which stable DW reversal occurs, where the wall velocity is constant as a function of field and the wall structure is stable, which is well suited to applications.
Domain walls in the (Ga,Mn)as diluted magnetic semiconductor.
Sugawara, Akira; Kasai, H; Tonomura, A; Brown, P D; Campion, R P; Edmonds, K W; Gallagher, B L; Zemen, J; Jungwirth, T
2008-02-01
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 to 120 nm. The domain walls are of the Néel type and evolve from near-90 degrees walls at low temperatures to large angle [11[over ]0]-oriented walls and small angle [110]-oriented walls at higher temperatures.
One-dimensional domain walls in thin ferromagnetic films with fourfold anisotropy
NASA Astrophysics Data System (ADS)
Lund, Ross G.; Muratov, Cyrill B.
2016-06-01
We study the properties of domain walls and domain patterns in ultrathin epitaxial magnetic films with two orthogonal in-plane easy axes, which we call fourfold materials. In these materials, the magnetization vector is constrained to lie entirely in the film plane and has four preferred directions dictated by the easy axes. We prove the existence of {{90}\\circ} and {{180}\\circ} domain walls in these materials as minimizers of a nonlocal one-dimensional energy functional. Further, we investigate numerically the role of the considered domain wall solutions for pattern formation in a rectangular sample.
Ferroelasticity, mechanical behavior, and phase stability of t prime zirconia ceramics
Jue Janfong.
1991-01-01
Large-grained (100-200 {mu}m), yttria doped, polycrystalline t{prime}-zirconia ceramics were fabricated by heating presintered samples at 2100C. Two point four and 3 mol% yttria-doped single crystals obtained from a commercial source were oriented by the Laue back-reflection method and cut along {l angle}100{r angle}, {l angle}110{r angle}, and {l angle}111{r angle} directions. They were also heat treated at 2100C. Ferroelastic domain structure was predicted by group theory and examined by transmission optical microscopy under polarized light and transmission electron microscopy. Orientations of domain boundaries were in accordance with predictions of group theory. X-ray diffraction showed that no monoclinic phase was detected on as-polished, ground, fracture surfaces, and on surfaces under tensile stresses as high as 400 MPa. Relative changes in the tetragonal peak intensities occurred and were attributed to ferroelastic domain switching. Higher toughness of 3 mol% Y{sub 2}O{sub 3} doped t{prime} samples (7.7MPam{sup 1/2}) compared to that of zirconia in the cubic phase (8 mol% Y{sub 2}O{sub 3}, 2.4MPam{sup 1/2}) was attributed in part to ferroelastic domain switching. Polished surfaces of polycrystalline t{prime}-materials showed no mono-clinic phase even after 1,000 hours at 275C in air, whereas conventional Y-TZP ceramics of a grain size larger than 0.5 {mu}m showed substantial transformation.
Domain walls and vortices in linearly coupled systems.
Dror, Nir; Malomed, Boris A; Zeng, Jianhua
2011-10-01
We investigate one- and two-dimensional radial domain-wall (DW) states in the system of two nonlinear-Schrödinger (NLS) or Gross-Pitaevskii (GP) equations, which are couple by linear mixing and by nonlinear XPM (cross-phase-modulation). The system has straightforward applications to two-component Bose-Einstein condensates, and to bimodal light propagation in nonlinear optics. In the former case the two components represent different hyperfine atomic states, while in the latter setting they correspond to orthogonal polarizations of light. Conditions guaranteeing the stability of flat continuous wave (CW) asymmetric bimodal states are established, followed by the study of families of the corresponding DW patterns. Approximate analytical solutions for the DWs are found near the point of the symmetry-breaking bifurcation of the CW states. An exact DW solution is produced for ratio 3:1 of the XPM and SPM (self-phase modulation) coefficients. The DWs between flat asymmetric states, which are mirror images of each other, are completely stable, and all other species of the DWs, with zero crossings in one or two components, are fully unstable. Interactions between two DWs are considered too, and an effective potential accounting for the attraction between them is derived analytically. Direct simulations demonstrate merger and annihilation of the interacting DWs. The analysis is extended for the system including single- and double-peak external potentials. Generic solutions for trapped DWs are obtained in a numerical form, and their stability is investigated. An exact stable solution is found for the DW trapped by a single-peak potential. In the 2D geometry, stable two-component vortices are found, with topological charges s=1,2,3. Radial oscillations of annular DW-shaped pulsons, with s=0,1,2, are studied too. A linear relation between the period of the oscillations and the mean radius of the DW ring is derived analytically.
Physical results from 2+1 flavor domain wall QCD
Scholz,E.E.
2008-07-14
We review recent results for the chiral behavior of meson masses and decay constants and the determination of the light quark masses by the RBC and UKQCD collaborations. We find that one-loop SU(2) chiral perturbation theory represents the behavior of our lattice data better than one-loop SU(3) chiral perturbation theory in both the pion and kaon sectors. The simulations have been performed using the Iwasaki gauge action at two different lattice spacings with the physical spatial volume held approximately fixed at (2.7fm){sup 3}. The Domain Wall fermion formulation was used for the 2+1 dynamical quark flavors: two (mass degenerate) light flavors with masses as light as roughly 1/5 the mass of the physical strange quark mass and one heavier quark flavor at approximately the value of the physical strange quark mass, On the ensembles generated with the coarser lattice spacing, we obtain for the physical average up- and down-quark and strange quark masses m{sub ud}{sup {ovr MS}} (2 GeV) = 3.72(0.16){sub stat}(0.33){sub ren}(0.18){sub syst}MeV and m{sub s}{sup {ovr MS}} (2 GeV) = 107.3(4.4){sub stat}(9.7){sub ren}(4.9){sub syst} MeV, respectively, while they find for the pion and kaon decay constants f{sub {pi}} = 124.1(3.6){sub stat}(6.9){sub syst}MeV, f{sub K} = 149.6(3.6){sub stat}(6.3){sub syst} MeV. The analysis for the finer lattice spacing has not been fully completed yet, but we already present some first (preliminary) results.
How to move domain walls in an antiferromagnet
NASA Astrophysics Data System (ADS)
Kim, Se Kwon
Domain walls (DWs) in an easy-axis antiferromagnet can be driven by several stimuli: a charge current (in conducting antiferromagnets), a magnon current, and a temperature gradient. In this talk, we discuss the dynamics of a DW induced by two latter external perturbations, which are applicable in both metallic and insulating antiferromagnets. First of all, we study the Brownian dynamics of a DW subjected to a temperature gradient. To this end, we derive the Langevin equation for the DW's center of mass with the aid of the fluctuation-dissipation theorem. A DW behaves as a classical massive particle immersed in a viscous medium. By considering a thermodynamic ensemble of DWs, we obtain the Fokker-Planck equation, from which we extract the average drift velocity of a DW. We briefly address other mechanisms of thermally driven DW motion. Secondly, we analyze the dynamics of a DW driven by circularly polarized magnons. Magnons passing through a DW reverse their spin upon transmission, thereby transferring two quanta of angular momentum to the DW and causing it to precess. A precessing DW partially reflects magnons back to the source. The reflection of magnons creates a previously identified reactive force. We point out a second mechanism of propulsion of the DW, which we term redshift: magnons passing through a precessing DW reduce their linear momentum and transfer the decrease to the DW. We solve the equations of motion for magnons in the background of a uniformly precessing DW with the aid of supersymmetric quantum mechanics and compute the net force and torque applied by magnons to the DW. The theory agrees well with micromagnetic simulations. This work has been supported in part by the ARO, the U.S. DOE-BES, and the U.S. NSF grants.
Domain walls and vortices in linearly coupled systems
Dror, Nir; Malomed, Boris A.; Zeng Jianhua
2011-10-15
We investigate one- and two-dimensional radial domain-wall (DW) states in the system of two nonlinear-Schroedinger (NLS) or Gross-Pitaevskii (GP) equations, which are couple by linear mixing and by nonlinear XPM (cross-phase-modulation). The system has straightforward applications to two-component Bose-Einstein condensates, and to bimodal light propagation in nonlinear optics. In the former case the two components represent different hyperfine atomic states, while in the latter setting they correspond to orthogonal polarizations of light. Conditions guaranteeing the stability of flat continuous wave (CW) asymmetric bimodal states are established, followed by the study of families of the corresponding DW patterns. Approximate analytical solutions for the DWs are found near the point of the symmetry-breaking bifurcation of the CW states. An exact DW solution is produced for ratio 3:1 of the XPM and SPM (self-phase modulation) coefficients. The DWs between flat asymmetric states, which are mirror images of each other, are completely stable, and all other species of the DWs, with zero crossings in one or two components, are fully unstable. Interactions between two DWs are considered too, and an effective potential accounting for the attraction between them is derived analytically. Direct simulations demonstrate merger and annihilation of the interacting DWs. The analysis is extended for the system including single- and double-peak external potentials. Generic solutions for trapped DWs are obtained in a numerical form, and their stability is investigated. An exact stable solution is found for the DW trapped by a single-peak potential. In the 2D geometry, stable two-component vortices are found, with topological charges s=1,2,3. Radial oscillations of annular DW-shaped pulsons, with s=0,1,2, are studied too. A linear relation between the period of the oscillations and the mean radius of the DW ring is derived analytically.
Interaction of ultrasonic waves with domain walls on nanocrystalline YIG.
Murthy, S R
2014-02-01
The nanocrystalline YIG samples with different particle sizes (20-40 nm) has been prepared using microwave-hydrothermal method. As synthesized powders were characterized using XRD and TEM. The powders were pressed and sintered at three different temperatures i.e., 700 °C/30 min, 800 °C/30 min, 900 °C/30 min, using microwave furnace. The sintered samples were characterized using XRD and TEM. The sintered samples are monophasic in nature with average grain size ranging in between 72 nm and 90 nm. The thermal variation of ultrasonic velocities [longitudinal (V(l)) and transverse (V(S))] and longitudinal attenuation (α(l)) has been measured on sintered samples by the pulse transmissionmethod at 1 MHz, in the temperature range of 300-600 K. The room temperature velocity is found to be grain size dependent and decreases with increasing temperature, except near the Curie temperature, T(C), where a small anomaly is observed. The longitudinal attenuation (α(1)) at room temperature is also found to be more sample dependent. The temperature variation of ultrasonic longitudinal attenuation exhibits a sharp maximum just below Curie temperature (T(C)). The above observations were carried on in the demagnetized state, on the application of a saturation field of 380 mT, the anomaly observed in the thermal variation of velocities (longitudinal and transverse) and attenuation is found to disappears. The observed interaction of ultrasonic velocity with domain walls has been qualitatively explained with the help oftemperature variation of magneto-crystalline anisotropy constant (k(1)) and Landau's theory.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3
NASA Astrophysics Data System (ADS)
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-02-01
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3.
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-02-20
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.
Exotic domain walls in Bose-Einstein condensates with double-well dispersion
NASA Astrophysics Data System (ADS)
Liu, Tongtong; Clark, Logan W.; Chin, Cheng
2016-12-01
We study the domain walls which form when Bose condensates acquire a double-well dispersion. Experiments have observed such domain walls in condensates driven across a Z2 symmetry-breaking phase transition in a shaken optical lattice. We derive a generic model to describe the dispersion and to compute the wave functions and energies of the domain walls. We find two distinct regimes which demand different physical pictures. In the weak-coupling regime, where interactions are weak compared to the kinetic-energy barrier, "density-wave domain walls" form that support an extended density wave and a series of phase steps. These features can be understood as the quantum interference between domains with distinct momenta. In the strong-coupling regime where interaction dominates, the system forms "phase domain walls" which have the minimum width allowed by the uncertainty principle and suppressed density modulation. Analytic results for the domain-wall wave functions are obtained in the two regimes. The energy of domain walls behaves similarly to that of topological defects in paradigmatic field theories.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-01-01
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors. PMID:28216672
Kim, June-Seo; Mawass, Mohamad-Assaad; Bisig, André; Krüger, Benjamin; Reeve, Robert M; Schulz, Tomek; Büttner, Felix; Yoon, Jungbum; You, Chun-Yeol; Weigand, Markus; Stoll, Hermann; Schütz, Gisela; Swagten, Henk J M; Koopmans, Bert; Eisebitt, Stefan; Kläui, Mathias
2014-03-24
Magnetic storage and logic devices based on magnetic domain wall motion rely on the precise and synchronous displacement of multiple domain walls. The conventional approach using magnetic fields does not allow for the synchronous motion of multiple domains. As an alternative method, synchronous current-induced domain wall motion was studied, but the required high-current densities prevent widespread use in devices. Here we demonstrate a radically different approach: we use out-of-plane magnetic field pulses to move in-plane domains, thus combining field-induced magnetization dynamics with the ability to move neighbouring domain walls in the same direction. Micromagnetic simulations suggest that synchronous permanent displacement of multiple magnetic walls can be achieved by using transverse domain walls with identical chirality combined with regular pinning sites and an asymmetric pulse. By performing scanning transmission X-ray microscopy, we are able to experimentally demonstrate in-plane magnetized domain wall motion due to out-of-plane magnetic field pulses.
Scanning of magnetic space groups and the analysis of non-magnetic domain walls.
Janovec, V; Litvin, D B
2007-09-01
Similarly to atomic positions in a crystal being fixed, or at least constrained by the space group of that crystal, the displacements of atoms in a domain wall are determined or constrained by the symmetry of the wall given by the sectional layer group of the corresponding domain pair. The sectional layer group can be interpreted as comprised of operations that leave invariant a plane transecting two overlapping structures, the domain states of the two domains adhering to the domain wall. The procedure of determining the sectional layer groups for all orientations and positions of a transecting plane is called scanning of the space group. Scanning of non-magnetic space groups has been described and tabulated. It is shown here that the scanning of magnetic groups can be determined from that of non-magnetic groups. The information provided by scanning of magnetic space groups can be utilized in the symmetry analysis of domain walls in non-magnetic crystals since, for any dichromatic space group, which expresses the symmetry of overlapped structures of two non-magnetic domains, there exists an isomorphic magnetic space group. Consequently, a sectional layer group of a magnetic space group expresses the symmetry of a non-magnetic domain wall. Examples of this are given in the symmetry analysis of ferroelectric domain walls in non-magnetic perovskites.
NASA Astrophysics Data System (ADS)
Soledade, P. R.; Brandão, J.; Mello, A.; Sampaio, L. C.
2017-02-01
We have investigated the pinning-depinning processes of vortex domain walls (VDW) in Permalloy nanowires with asymmetric triangular notches by means of magnetoresistance measurements and micromagnetic simulations. Through a model based on the anisotropic magnetoresistance (AMR) and the magnetization structure obtained from simulations, the magnetoresistance when the VDW passes stretched through the notch was calculated. Besides the depinning field, as it is known, also the magnetoresistance drop depends on the domain wall chirality. Measurements show that the resistance drop for clockwise (CW) chirality is ≈180 m Ω (38%) larger than for the counterclockwise (CCW) chirality. From the VDW resistance calculations it becomes clear which domain wall parameters, like domain wall structure, chirality and wall width, play a role on the magnetoresistance. These results offer an additional route to better controlling the VDW motion, which can be beneficial to applications.
Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Tserkovnyak, Yaroslav
2016-07-01
We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.
Current-induced domain wall motion in Rashba spin-orbit system
NASA Astrophysics Data System (ADS)
Obata, Katsunori; Tatara, Gen
2008-06-01
Current-induced magnetic domain wall motion, induced by transfer of spin transfer effect due to exchange interaction, is expected to be useful for next generation high-density storages. Here we showed that efficient domain wall manipulation can be achieved by the introduction of Rashba spin-orbit interaction, which induces spin precession of conduction electron and acts as an effective magnetic field. Its effect on domain wall motion depends on the wall configuration. We found that the effect is significant for Bloch wall with the hard axis along the current, since the effective field works as β or fieldlike term and removes the threshold current if in extrinsic pinning is absent. For Néel wall and Bloch wall with easy axis perpendicular to Rashba plane, the effective field induces a step motion of wall corresponding to a rotation of wall plane by the angle of approximately π at current lower than intrinsic threshold. Rashba interaction would therefore be useful to assist efficient motion of domain walls at low current.
Charge-order domain walls with enhanced conductivity in a layered manganite
Ma, Eric Yue; Bryant, Benjamin; Tokunaga, Yusuke; Aeppli, Gabriel; Tokura, Yoshinori; Shen, Zhi-Xun
2015-01-01
Interfaces and boundaries in condensed-matter systems often have electronic properties distinct from the bulk material and thus have become a topic of both fundamental scientific interest and technological importance. Here we identify, using microwave impedance microscopy, enhanced conductivity of charge-order domain walls in the layered manganite Pr(Sr0.1Ca0.9)2Mn2O7. We obtain a complete mesoscopic map of surface topography, crystalline orientation and electronic phase, and visualize the thermal phase transition between two charge-ordered phases. In both phases, charge-order domains occur with domain walls showing enhanced conductivity likely due to local lifting of the charge order. Finite element analysis shows that the resolved domain walls can be as narrow as few nanometres. The domain walls are stabilized by structural twins and have a strong history dependence, suggesting that they may be manipulated to create novel devices. PMID:26139185
Charge-order domain walls with enhanced conductivity in a layered manganite.
Ma, Eric Yue; Bryant, Benjamin; Tokunaga, Yusuke; Aeppli, Gabriel; Tokura, Yoshinori; Shen, Zhi-Xun
2015-07-03
Interfaces and boundaries in condensed-matter systems often have electronic properties distinct from the bulk material and thus have become a topic of both fundamental scientific interest and technological importance. Here we identify, using microwave impedance microscopy, enhanced conductivity of charge-order domain walls in the layered manganite Pr(Sr0.1Ca0.9)2Mn2O7. We obtain a complete mesoscopic map of surface topography, crystalline orientation and electronic phase, and visualize the thermal phase transition between two charge-ordered phases. In both phases, charge-order domains occur with domain walls showing enhanced conductivity likely due to local lifting of the charge order. Finite element analysis shows that the resolved domain walls can be as narrow as few nanometres. The domain walls are stabilized by structural twins and have a strong history dependence, suggesting that they may be manipulated to create novel devices.
Trützschler, Julia; Sentosun, Kadir; Mozooni, Babak; Mattheis, Roland; McCord, Jeffrey
2016-01-01
High density magnetic domain wall gratings are imprinted in ferromagnetic-antiferromagnetic thin films by local ion irradiation by which alternating head-to-tail-to-head-to-tail and head-to-head-to-tail-to-tail spatially overlapping domain wall networks are formed. Unique magnetic domain processes result from the interaction of anchored domain walls. Non-linear magnetization response is introduced by the laterally distributed magnetic anisotropy phases. The locally varying magnetic charge distribution gives rise to localized and guided magnetization spin-wave modes directly constrained by the narrow domain wall cores. The exchange coupled multiphase material structure leads to unprecedented static and locally modified dynamic magnetic material properties. PMID:27487941
Grisolia, Mauricio J; Peralta, Diego A; Valdez, Hugo A; Barchiesi, Julieta; Gomez-Casati, Diego F; Busi, María V
2017-01-01
Starch binding domains of starch synthase III from Arabidopsis thaliana (SBD123) binds preferentially to cell wall polysaccharides rather than to starch in vitro. Transgenic plants overexpressing SBD123 in the cell wall are larger than wild type. Cell wall components are altered in transgenic plants. Transgenic plants are more susceptible to digestion than wild type and present higher released glucose content. Our results suggest that the transgenic plants have an advantage for the production of bioethanol in terms of saccharification of essential substrates. The plant cell wall, which represents a major source of biomass for biofuel production, is composed of cellulose, hemicelluloses, pectins and lignin. A potential biotechnological target for improving the production of biofuels is the modification of plant cell walls. This modification is achieved via several strategies, including, among others, altering biosynthetic pathways and modifying the associations and structures of various cell wall components. In this study, we modified the cell wall of A. thaliana by targeting the starch-binding domains of A. thaliana starch synthase III to this structure. The resulting transgenic plants (E8-SDB123) showed an increased biomass, higher levels of both fermentable sugars and hydrolyzed cellulose and altered cell wall properties such as higher laxity and degradability, which are valuable characteristics for the second-generation biofuels industry. The increased biomass and degradability phenotype of E8-SBD123 plants could be explained by the putative cell-wall loosening effect of the in tandem starch binding domains. Based on these results, our approach represents a promising biotechnological tool for reducing of biomass recalcitrance and therefore, the need for pretreatments.
NASA Astrophysics Data System (ADS)
Ermolaeva, O. L.; Skorokhodov, E. V.; Mironov, V. L.
2016-11-01
This paper presents the results of theoretical and experimental investigations of the domain wall pinning in a planar ferromagnetic system consisting of a nanowire and four rectangular uniformly magnetized nanoparticles located at an angle to the nanowire axis. Based on the calculations of the interaction energy of the domain wall with stray fields of nanoparticles and the micromagnetic simulation, it has been demonstrated that, in this system, there are different variants of the domain wall pinning, which are determined by the relative orientation of the magnetic moments of nanoparticles and the magnetization of the nanowire. The possibility of the creation of magnetic logic cells based on the structures under consideration has been discussed.
Multi-scalar tachyon potential on non-BPS domain walls
NASA Astrophysics Data System (ADS)
Brito, F. A.; Jesuíno, H. S.
2010-07-01
We have considered the multi-scalar and multi-tachyon fields living on a 3d domain wall embedded in a 5d dimensional Minkowski spacetime. The effective action for such a domain wall can be found by integrating out the normal m odes as vibrating modes around the domain wall solution of a truncated 5d supergravity action. The multi-scalar tachyon potential is good enough to modeling assisted inflation scenario with multi-tachyon fields. The tachyon condensation is also briefly addressed.
Selective domain wall depinning by localized Oersted fields and Joule heating
NASA Astrophysics Data System (ADS)
Ilgaz, Dennis; Kläui, Mathias; Heyne, Lutz; Boulle, Olivier; Zinser, Fabian; Krzyk, Stephen; Fonin, Mikhail; Rüdiger, Ulrich; Backes, Dirk; Heyderman, Laura J.
2008-09-01
Using low temperature magnetoresistance measurements, the possibility to selectively move a domain wall locally by applying current pulses through a Au nanowire adjacent to a permalloy element is studied. We find that the domain wall depinning field is drastically modified with increasing current density due to the Joule heating and the Oersted field of the current, and controlled motion due to the Oersted field without any externally applied fields is achieved. By placing the domain wall at various distances from the Au wire, we determine the range of the Joule heating and the Oersted field and both effects can be separated.
Domain wall motion driven by spin Hall effect—Tuning with in-plane magnetic anisotropy
Rushforth, A. W.
2014-04-21
This letter investigates the effects of in-plane magnetic anisotropy on the current induced motion of magnetic domain walls in systems with dominant perpendicular magnetic anisotropy, where accumulated spins from the spin Hall effect in an adjacent heavy metal layer are responsible for driving the domain wall motion. It is found that that the sign and magnitude of the domain wall velocity in the uniform flow regime can be tuned significantly by the in-plane magnetic anisotropy. These effects are sensitive to the ratio of the adiabatic and non-adiabatic spin transfer torque parameters and are robust in the presence of pinning and thermal fluctuations.
Current-driven domain wall depinning from an anisotropy boundary in nanowires.
Gerhardt, T; Drews, A; Meier, G
2014-05-21
The interaction of a current-driven domain wall with an anisotropy boundary in nanowires with perpendicular magnetic anisotropy is investigated. A local reduction of the anisotropy constant is used to create an artificial boundary where the domain wall gets pinned. Micromagnetic simulations and analytical calculations, based on a one-dimensional model, are employed to describe the interaction of the domain wall and the anisotropy boundary and to determine the depinning current densities. Two different pinning regimes-an intrinsic and an extrinsic-can be identified in dependence with the characteristic of the boundary. A very good agreement between simulated and analytically obtained data is achieved.
Reproducible domain wall pinning by linear non-topographic features in a ferromagnetic nanowire
NASA Astrophysics Data System (ADS)
Basith, M. A.; McVitie, S.; McGrouther, D.; Chapman, J. N.
2012-06-01
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers have been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a focused ion beam system. The pinning results from irradiation induced alloying leading to magnetic property modification only in the affected regions. Using Lorentz transmission electron microscopy, we have studied the pinning behavior of domain walls at the irradiation sites. Depending on the irradiation dose, a single line feature not only pinned the domain walls but also acted to control their structure and the strength of their pinning.
Topological electromotive force from domain-wall dynamics in a ferromagnet
Yang, Shengyuan; Beach, Geoffrey S. D.; Knutson, Carl; Xiao, Di; Zhang, Zhenyu; Tsoi, Maxin; Niu, Qian
2010-01-01
We formulate a local gauge-invariant theory for the electromotive force induced by domain-wall dynamics in a ferromagnet. We demonstrate that this emf generation is a real-space topological pumping effect. The integral of the emf over one pumping period is a quantized topological invariant which does not depend on the details of the domain-wall configuration nor on its detailed dynamics. Based on our theory, the full instanta- neous electric potential distribution can be mapped out by standard electrostatic methods. We also provide further details on our recent experiments which confirmed the emf induced by domain-wall dynamics.
Wang, X H; Wang, W Z; Kong, T F; Lew, W S
2011-03-01
We have studied the magnetic switching behavior of permalloy asymmetric rings using micromagnetic simulations. The simulation results have revealed that a domain wall trapping feature is present at the narrow arm of the asymmetric ring. This trapping feature is obtained via precise control of the lateral geometric features, the ring asymmetry and the film thickness. Our results show that the trapped domain walls do not annihilate until the magnetization in the wide arm is reversed under a relatively large magnetic field. Furthermore, the magnetic field strength needed to annihilate the domain wall is found to be decreasing with larger asymmetry ratio.
Zhao, Z; Ding, X; Lookman, T; Sun, J; Salje, E K H
2013-06-18
Energy absorption in multiferroic materials stems typically from strain relaxation which can be strong even when no extrinsic defects exist in the material. Computer simulations of a simple two-dimensional model on a generic, proper ferroelastic material identify the dissipative mechanisms associated with the dynamical motion as: a) advance and retraction of needle-shaped twin domains and, b) movement of kinks inside twin boundaries. Both movements involve friction losses. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Domain wall spin structures in mesoscopic Fe rings probed by high resolution SEMPA
NASA Astrophysics Data System (ADS)
Krautscheid, Pascal; Reeve, Robert M.; Lauf, Maike; Krüger, Benjamin; Kläui, Mathias
2016-10-01
We present a combined theoretical and experimental study of the energetic stability and accessibility of different domain wall spin configurations in mesoscopic magnetic iron rings. The evolution is investigated as a function of the width and thickness in a regime of relevance to devices, while Fe is chosen as a material due to its simple growth in combination with attractive magnetic properties including high saturation magnetization and low intrinsic anisotropy. Micromagnetic simulations are performed to predict the lowest energy states of the domain walls, which can be either the transverse or vortex wall spin structure, in good agreement with analytical models, with further simulations revealing the expected low temperature configurations observable on relaxation of the magnetic structure from saturation in an external field. In the latter case, following the domain wall nucleation process, transverse domain walls are found at larger widths and thicknesses than would be expected by just comparing the competing energy terms demonstrating the importance of metastability of the states. The simulations are compared to high spatial resolution experimental images of the magnetization using scanning electron microscopy with polarization analysis to provide a phase diagram of the various spin configurations. In addition to the vortex and simple symmetric transverse domain wall, a significant range of geometries are found to exhibit highly asymmetric transverse domain walls with properties distinct from the symmetric transverse wall. Simulations of the asymmetric walls reveal an evolution of the domain wall tilting angle with ring thickness which can be understood from the thickness dependencies of the contributing energy terms. Analysis of all the data reveals that in addition to the geometry, the influence of materials properties, defects and thermal activation all need to be taken into account in order to understand and reliably control the experimentally accessible
Dynamics of domain walls in thin films with out-of-plane magnetization
NASA Astrophysics Data System (ADS)
Makhfudz, Imam; Krüger, Benjamin; Tchernyshyov, Oleg
2010-03-01
A thin magnetic film with a strong easy-axis anisotropy favoring the out-of-plane direction breaks up into mesoscopic magnetic domains separated by Bloch domain walls. Depending on magnetic history, these domains can form ordered stripes or disordered labyrinthine patterns. The physics of these domain walls is strongly influenced by dipolar interactions that mediate a long-range interaction between domain walls and make the wall tension negative [1]. Here we point out that the dominance of the gyrotropic force over the viscous one makes the dynamics of Bloch walls rather unusual. Low-frequency waves on such a wall are chiral: the speed of propagation is different for the two directions along the wall. The puzzling star-shaped trajectory of a magnetic bubble noted in [2] is a result of superposition of two waves with the same wavenumber and different frequencies running in opposite directions along the wall that surrounds the bubble. We point out a similarity to the edges of a quantum Hall state. [1] S. A. Langer, R. E. Goldstein, and D. P. Jackson, Phys. Rev. A 46, 4894 (1992). [2] C. Moutafis, S. Komineas, and J. A. C. Bland, Phys. Rev. B 79, 224429 (2009).
Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage.
Hu, Jia-Mian; Yang, Tiannan; Momeni, Kasra; Cheng, Xiaoxing; Chen, Lei; Lei, Shiming; Zhang, Shujun; Trolier-McKinstry, Susan; Gopalan, Venkatraman; Carman, Gregory P; Nan, Ce-Wen; Chen, Long-Qing
2016-04-13
Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.
Laccases Direct Lignification in the Discrete Secondary Cell Wall Domains of Protoxylem1[W][OPEN
Schuetz, Mathias; Benske, Anika; Smith, Rebecca A.; Watanabe, Yoichiro; Tobimatsu, Yuki; Ralph, John; Demura, Taku; Ellis, Brian; Samuels, A. Lacey
2014-01-01
Plants precisely control lignin deposition in spiral or annular secondary cell wall domains during protoxylem tracheary element (TE) development. Because protoxylem TEs function to transport water within rapidly elongating tissues, it is important that lignin deposition is restricted to the secondary cell walls in order to preserve the plasticity of adjacent primary wall domains. The Arabidopsis (Arabidopsis thaliana) inducible VASCULAR NAC DOMAIN7 (VND7) protoxylem TE differentiation system permits the use of mutant backgrounds, fluorescent protein tagging, and high-resolution live-cell imaging of xylem cells during secondary cell wall development. Enzymes synthesizing monolignols, as well as putative monolignol transporters, showed a uniform distribution during protoxylem TE differentiation. By contrast, the oxidative enzymes LACCASE4 (LAC4) and LAC17 were spatially localized to secondary cell walls throughout protoxylem TE differentiation. These data support the hypothesis that precise delivery of oxidative enzymes determines the pattern of cell wall lignification. This view was supported by lac4lac17 mutant analysis demonstrating that laccases are necessary for protoxylem TE lignification. Overexpression studies showed that laccases are sufficient to catalyze ectopic lignin polymerization in primary cell walls when exogenous monolignols are supplied. Our data support a model of protoxylem TE lignification in which monolignols are highly mobile once exported to the cell wall, and in which precise targeting of laccases to secondary cell wall domains directs lignin deposition. PMID:25157028
Laccases direct lignification in the discrete secondary cell wall domains of protoxylem.
Schuetz, Mathias; Benske, Anika; Smith, Rebecca A; Watanabe, Yoichiro; Tobimatsu, Yuki; Ralph, John; Demura, Taku; Ellis, Brian; Samuels, A Lacey
2014-10-01
Plants precisely control lignin deposition in spiral or annular secondary cell wall domains during protoxylem tracheary element (TE) development. Because protoxylem TEs function to transport water within rapidly elongating tissues, it is important that lignin deposition is restricted to the secondary cell walls in order to preserve the plasticity of adjacent primary wall domains. The Arabidopsis (Arabidopsis thaliana) inducible VASCULAR NAC DOMAIN7 (VND7) protoxylem TE differentiation system permits the use of mutant backgrounds, fluorescent protein tagging, and high-resolution live-cell imaging of xylem cells during secondary cell wall development. Enzymes synthesizing monolignols, as well as putative monolignol transporters, showed a uniform distribution during protoxylem TE differentiation. By contrast, the oxidative enzymes LACCASE4 (LAC4) and LAC17 were spatially localized to secondary cell walls throughout protoxylem TE differentiation. These data support the hypothesis that precise delivery of oxidative enzymes determines the pattern of cell wall lignification. This view was supported by lac4lac17 mutant analysis demonstrating that laccases are necessary for protoxylem TE lignification. Overexpression studies showed that laccases are sufficient to catalyze ectopic lignin polymerization in primary cell walls when exogenous monolignols are supplied. Our data support a model of protoxylem TE lignification in which monolignols are highly mobile once exported to the cell wall, and in which precise targeting of laccases to secondary cell wall domains directs lignin deposition.
NASA Astrophysics Data System (ADS)
Büttner, Felix; Krüger, Benjamin; Eisebitt, Stefan; Kläui, Mathias
2015-08-01
Bloch domain walls are the most common type of transition between two out-of-plane magnetized domains (one magnetized upwards, one downwards) in films with perpendicular magnetic anisotropy. The rotation of the spins of such domain walls in the plane of the film requires energy, which is described by an effective anisotropy, the so-called transverse or hard axis anisotropy K⊥. This anisotropy and the related Döring mass density of the domain wall are key parameters of the one-dimensional model to describe the motion of magnetic domain walls. In particular, the critical field strength or current density where oscillatory domain wall motion sets in (Walker breakdown) is directly proportional to K⊥. So far, no general framework is available to determine K⊥ from static characterizations such as magnetometry measurements. Here, we derive a universal analytical expression to calculate the transverse anisotropy constant for the important class of perpendicular magnetic multilayers. All the required input parameters of the model, such as the number of repeats, the thickness of a single magnetic layer, and the layer periodicity, as well as the effective perpendicular anisotropy, the saturation magnetization, and the static domain wall width are accessible by static sample characterizations. We apply our model to a widely used multilayer system and find that the effective transverse anisotropy constant is a factor of seven different from that when using the conventional approximations, showing the importance of using our analysis scheme. Our model is also applicable to domain walls in materials with Dzyaloshinskii-Moriya interaction (DMI). The accurate knowledge of K⊥ is needed to determine other unknown parameters from measurements, such as the DMI strength or the spin polarization of the spin current in current-induced domain wall motion experiments.
Time evolution of temperature and entropy of various collapsing domain walls
Halstead, Evan
2013-08-01
We investigate the time evolution of the temperature and entropy of gravitationally collapsing shells of matter, represented by domain walls, as seen by an asymptotic observer. In particular, we seek to understand how topology and the addition of a cosmological constant affect the gravitational collapse. Previous work has shown that the entropy of a spherically symmetric collapsing domain approaches a constant. In this paper, we reproduce these results, using both a fully quantum and a semi-classical approach, then we repeat the process for a de Sitter Schwarzschild domain wall (spherical with cosmological constant) and a (3+1) BTZ domain wall (cylindrical). We do this by coupling a scalar field to the background of the domain wall and analyzing the spectrum of radiation as a function of time. We find that the spectrum is quasi-thermal, with the degree of thermality increasing as the domain wall approaches the horizon. The thermal distribution allows for the determination of the temperature as a function of time, and we find that the late time temperature is consistent with the Hawking temperature. From the temperature we find the entropy. Since the collapsing domain wall is what forms a black hole, we can compare the results to those of the standard entropy-area relation. We find that the entropy does in fact approach a constant that is consistent with the Hawking entropy. However, both the de Sitter Schwarzschild domain wall and the (3+1) BTZ domain wall show periods of decreasing entropy, which suggests that spontaneous collapse may be prevented.
NASA Astrophysics Data System (ADS)
Gomonay, O.; Kläui, M.; Sinova, J.
2016-10-01
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here, we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain, and this enables a synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of AF-based devices based on the controlled motion of AF domain walls.
Tunable short-wavelength spin wave excitation from pinned magnetic domain walls
Van de Wiele, Ben; Hämäläinen, Sampo J.; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan
2016-01-01
Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors. PMID:26883893
Domain wall motion and Barkhausen effect in magnetic nanoparticles for EOR applications
NASA Astrophysics Data System (ADS)
Baig, Mirza Khurram; Soleimani, Hassan; Yahya, Noorhana
2016-11-01
The domain wall motion in magnetic nanoparticles is a useful parameter of study. The subject of this research is to study of the phenomenon of discontinuous domain wall motion, or the Barkhausen Effect in magnetic nanoparticles. In this work hematite (Fe2O3) nanoparticles have been synthesized using sol-gel auto-combustion and characterized using X-ray diffraction, Field emission scanning electron microscopy (FESEM), Transmission electron microscope (TEM) and Vibrating sample magnetometer (VSM) for crystal structure, morphology, shape, size and magnetic properties respectively. The FESEM and TEM results show that the particles are spherical in nature and average size is 60nm that is suitable for domain walls and barkhuasen effect. The VSM results show high coercivity 175 Oe and low saturation magnetization due to domain wall pinning and barkhausen effect. The size and magnetic properties reveals the existence of domain walls in the synthesized sample. The magnetic properties confirm the energy losses due to domain wall pinning, discontinuous domain rotation or barkhausen effect during magnetization which is useful for oil-water interfacial tension reduction and viscosity of oil. The high surface charge of magnetic nanoparticles and adsorption at the rock surface is useful for wettability alteration of rocks.
Tunable short-wavelength spin wave excitation from pinned magnetic domain walls.
Van de Wiele, Ben; Hämäläinen, Sampo J; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan
2016-02-17
Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors.
Gillijns, W; Aladyshkin, A Yu; Lange, M; Van Bael, M J; Moshchalkov, V V
2005-11-25
Domain-wall superconductivity is studied in a superconducting Nb film placed between two ferromagnetic Co/Pd multilayers with perpendicular magnetization. The parameters of top and bottom ferromagnetic films are chosen to provide different coercive fields, so that the magnetic domain structure of the ferromagnets can be selectively controlled. From the dependence of the critical temperature Tc on the applied magnetic field H, we have found evidence for domain-wall superconductivity in this three-layered F/S/F structure for different magnetic domain patterns. The phase boundary, calculated numerically for this structure from the linearized Ginzburg-Landau equation, is in good agreement with the experimental data.
Characteristics of domain wall chirality and propagation in a Y-junction nanowire
Kwak, W.-Y.; Yoon, Seungha; Kwon, J.-H.; Grünberg, P.; Cho, B. K.
2016-01-14
Chirality-dependent propagation of transverse wall along a nanowire was investigated using a Y-junction with spin-valve structure. It was found that the Y-junction can be used for convenient and effective electric detection of transverse domain wall chirality, especially in a nanowire with sub-200 nm width, where it is difficult to electrically detect chirality using conventional artificial defect, such as a notch, due to small resistance change. Domain wall propagation path in the Y-junction was found to be determined by the wall chirality, whether clockwise or counterclockwise. Using the Y-junction nanowire, characteristics of domain wall chirality that was nucleated in a nucleation pad, attached at the end of a nanowire, were studied and found to be in good agreement with the results of theoretical simulation.
Gravity trapping on a finite thickness domain wall: An analytic study
Cvetic, Mirjam; Robnik, Marko
2008-06-15
We construct an explicit model of the gravity trapping domain-wall potential, where for the first time we can study explicitly the graviton wave function fluctuations for any thickness of domain wall. A concrete form of the potential depends on one parameter 0{<=}x{<=}({pi}/2), which effectively parameterizes the thickness of the domain wall with specific limits x{yields}0 and x{yields}({pi}/2) corresponding to the thin and the thick wall, respectively. The analysis of continuum Kaluza-Klein fluctuations yields explicit expressions for both small and large Kaluza-Klein energy. We also derive specific explicit conditions in the regime x>1, for which the fluctuation modes exhibit a resonance behavior, and which could sizably affect the modifications of the four-dimensional Newton's law at distances that typically are by 4 orders of magnitude larger than those relevant for Newton's law modifications of thin walls.
Li, Songtian; Liu, Xiaoxi; Morisako, Akimistu
2012-09-01
The domain wall movement behaviors under current combining with magnetic field in perpendicularly magnetized TbFeCo wire were studied by a polar magneto-optical Kerr effect microscope. The velocity for domain wall creeping along electrons flowing direction was found to be apparently higher than that of domain wall creeping against electrons flowing, which is the signature of the spin transfer torque effect. By employing the modified field-driven creep motion law, a spin transfer efficiency of 2.7 Oe cm2/10(6) A was determined for TbFeCo wire by treating the spin transfer torque as an effective field adding to the external field. The high spin transfer efficiency suggests that perpendicularly magnetized system with sharp domain walls in TbFeCo film shows high superiorities for applications in spin transfer torque based devices compared with in-plane magnetized systems.
Polarization domain walls in optical fibres as topological bits for data transmission
Gilles, M.; Bony, P-Y.; Garnier, J.; Picozzi, A.; Guasoni, M.; Fatome, J.
2016-01-01
Domain walls are topological defects which occur at symmetry-breaking phase transitions. While domain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boundary of neighbouring regions of oppositely aligned magnetic dipoles, their equivalent in optics have not been fully explored so far. Here, we experimentally demonstrate the existence of a universal class of polarization domain walls in the form of localized polarization knots in conventional optical fibres. We exploit their binding properties for optical data transmission beyond the Kerr limits of normally dispersive fibres. In particular, we demonstrate how trapping energy in well-defined train of polarization domain walls allows undistorted propagation of polarization knots at a rate of 28 GHz along a 10 km length of normally dispersive optical fibre. These results constitute the first experimental observation of kink-antikink solitary wave propagation in nonlinear fibre optics. PMID:28168000
Combined effect of magnetic field and charge current on antiferromagnetic domain-wall dynamics
NASA Astrophysics Data System (ADS)
Yamane, Yuta; Gomonay, Olena; Velkov, Hristo; Sinova, Jairo
2017-08-01
We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has been shown recently as an alternative and efficient way to manipulate antiferromagnets. We find a new role of the magnetic field in the antiferromagnetic dynamics that appears when it is combined with charge current, demonstrating a domain wall motion in the presence of both field and current. We show that a spatially varying magnetic field can shift the current-driven domain-wall velocity, depending on the domain-wall structure and the direction of the field gradient. Our result suggests a novel concept of field control of current-driven antiferromagnetic dynamics.
Multiple integral representation for the trigonometric SOS model with domain wall boundaries
NASA Astrophysics Data System (ADS)
Galleas, W.
2012-05-01
Using the dynamical Yang-Baxter algebra we derive a functional equation for the partition function of the trigonometric SOS model with domain wall boundary conditions. The solution of the equation is given in terms of a multiple contour integral.
Annealing effect on current-driven domain wall motion in Pt/[Co/Ni] wire
NASA Astrophysics Data System (ADS)
Furuta, Masaki; Liu, Yang; Sepehri-Amin, Hossein; Hono, Kazuhiro; Zhu, Jian-Gang Jimmy
2017-09-01
The annealing effect on the efficiency of current-driven domain wall motion governed by the spin Hall effect in perpendicularly magnetized Pt/[Co/Ni] wires is investigated experimentally. Important physical parameters, such as the Dzyaloshinskii-Moriya Interaction (DMI), spin Hall angle, and perpendicular anisotropy field strength, for the domain wall motion are all characterized at each annealing temperature. It is found that annealing of wires at temperatures over 120 °C causes significant reduction of the domain wall velocity. Energy dispersive X-ray spectroscopy analysis shows pronounced Co diffusion across the Pt/Co interface resulted from annealing at relatively high temperatures. The combined modeling study shows that the reduction of DMI caused by annealing is mostly responsible for the domain wall velocity reduction due to annealing.
Domain wall model in the galactic Bose-Einstein condensate halo
Souza, J.C.C. de; Pires, M.O.C. E-mail: marcelo.pires@ufabc.edu.br
2013-05-01
We assume that the galactic dark matter halo, considered composed of an axionlike particles Bose-Einstein condensate [1], can present topological defects, namely domain walls, arising as the dark soliton solution for the Gross-Pitaevskii equation in a self-graviting potential. We investigate the influence that such substructures would have in the gravitational interactions within a galaxy. We find that, for the simple domain wall model proposed, the effects are too small to be identified, either by means of a local measurement of the gradient of the gravitational field or by analysing galaxy rotation curves. In the first case, the gradient of the gravitational field in the vicinity of the domain wall would be 10{sup −31} (m/s{sup 2})/m. In the second case, the ratio of the tangential velocity correction of a star due to the presence of the domain wall to the velocity in the spherical symmetric case would be 10{sup −8}.
Universal charge and current on magnetic domain walls in Weyl semimetals
NASA Astrophysics Data System (ADS)
Araki, Yasufumi; Yoshida, Akihide; Nomura, Kentaro
2016-09-01
Domain walls in three-dimensional Weyl semimetals, formed by localized magnetic moments, are investigated. There appear bound states around the domain wall with the discrete spectrum, among which we find "Fermi arc" states with the linear dispersion. The Fermi arc modes contribute to the electric charge and current localized at the domain wall, which reveal a universal behavior depending only on chemical potential and the splitting of the Weyl nodes. This equilibrium current can be traced back to the chiral magnetic effect, or the edge counterpart of the anomalous Hall effect in the bulk. We propose a way to manipulate the motion of the domain wall, accompanied with the localized charge, by applying an external electric field.
Dzyaloshinskii-Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire
NASA Astrophysics Data System (ADS)
Kheng Teoh, Han; Goolaup, Sarjoosing; Siang Lew, Wen
2017-01-01
Magnetic domain wall positional manipulation is usually through the introduction of potential trap. In this work, we show that the presence of interfacial Dzyaloshinkii-Moriya interaction leads to a different static depinning field for Néel domain walls with the same handedness in a notched magnetic nanowire. The difference in static depinning field is due to the Néel domain wall spin orientation. The spin orientation leads to different torques being exerted on the localized magnetic moments. This inherently imposes a spin orientation dependent diode-like behavior for domain walls in a notched nanowire. An equation which relates the difference in static depinning field to the notch geometry is derived. Micromagnetic simulation with varying damping constant reveals the influence of damping constant on the strength of depinning anomaly.
Analytical modelling and x-ray imaging of oscillations of a single magnetic domain wall
Bocklage, Lars; Kruger, Benjamin; Fischer, Peter; Meier, Guido
2009-07-10
Domain-wall oscillation in a pinnig potential is described analytically in a one dimensional model for the feld-driven case. For a proper description the pinning potential has to be extended by nonharmonic contributions. Oscillations of a domain wall are observed on its genuine time scale by magnetic X-ray microscopy. It is shown that the nonharmonic terms are present in real samples with a strong restoring potential. In the framework of our model we gain deep insight into the domain-wall motion by looking at different phase spaces. The corrections of the harmonic potential can change the motion of the domain wall significantly. The damping parameter of permalloy is determined via the direct imaging technique.
Direct imaging of topological edge states at a bilayer graphene domain wall.
Yin, Long-Jing; Jiang, Hua; Qiao, Jia-Bin; He, Lin
2016-06-17
The AB-BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Although it has been extensively studied in theory, a direct imaging of its topological edge states is still missing. Here we image the topological edge states at the graphene bilayer domain wall by using scanning tunnelling microscope. The simultaneously obtained atomic-resolution images of the domain wall provide us unprecedented opportunities to measure the spatially varying edge states within it. The one-dimensional conducting channels are observed to be mainly located around the two edges of the domain wall, which is reproduced quite well by our theoretical calculations. Our experiment further demonstrates that the one-dimensional topological states are quite robust even in the presence of high magnetic fields. The result reported here may raise hopes of graphene-based electronics with ultra-low dissipation.
Domain-wall theory and nonstationarity in driven flow with exclusion.
Stinchcombe, R B; de Queiroz, S L A
2016-07-01
We study the dynamical evolution toward steady state of the stochastic nonequilibrium model known as the totally asymmetric simple exclusion process, in both uniform and nonuniform (staggered) one-dimensional systems with open boundaries. Domain-wall theory and numerical simulations are used and, where pertinent, their results are compared to existing mean-field predictions and exact solutions where available. For uniform chains we find that the inclusion of fluctuations inherent to the domain-wall formulation plays a crucial role in providing good agreement with simulations, which is severely lacking in the corresponding mean-field predictions. For alternating-bond chains the domain-wall predictions for the features of the phase diagram in the parameter space of injection and ejection rates turn out to be realized only in an incipient and quantitatively approximate way. Nevertheless, significant quantitative agreement can be found between several additional domain-wall theory predictions and numerics.
Domain-wall theory and nonstationarity in driven flow with exclusion
NASA Astrophysics Data System (ADS)
Stinchcombe, R. B.; de Queiroz, S. L. A.
2016-07-01
We study the dynamical evolution toward steady state of the stochastic nonequilibrium model known as the totally asymmetric simple exclusion process, in both uniform and nonuniform (staggered) one-dimensional systems with open boundaries. Domain-wall theory and numerical simulations are used and, where pertinent, their results are compared to existing mean-field predictions and exact solutions where available. For uniform chains we find that the inclusion of fluctuations inherent to the domain-wall formulation plays a crucial role in providing good agreement with simulations, which is severely lacking in the corresponding mean-field predictions. For alternating-bond chains the domain-wall predictions for the features of the phase diagram in the parameter space of injection and ejection rates turn out to be realized only in an incipient and quantitatively approximate way. Nevertheless, significant quantitative agreement can be found between several additional domain-wall theory predictions and numerics.
Beyond the quasi-particle: stochastic domain wall dynamics in soft ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Hayward, T. J.; Omari, K. A.
2017-03-01
We study the physical origins of stochastic domain wall pinning in soft ferromagnetic nanowires using focused magneto-optic Kerr effect measurements and dynamic micromagnetic simulations. Our results illustrate the ubiquitous nature of these effects in Ni80Fe20 nanowires, and show that they are not only a result of the magnetisation history of the system (i.e. the magnetisation structure of the injected domain walls), and the onset of non-linear propagation dynamics above the Walker breakdown field, but also a complex interplay between the two. We show that this means that, while micromagnetics can be used to make qualitative predictions of the behaviour of domain walls at defect sites, making quantitative predictions is much more challenging. Together, our results reinforce the view that even in these simple pseudo-one dimensional nanomagnets, domain walls must be considered as complex, dynamically evolving objects rather than simple quasi-particles.
Imaging and Tailoring the Chirality of Domain Walls in Magnetic Films.
Chen, Gong; Schmid, Andreas K
2015-10-14
Electric-current-induced magnetization switching is a keystone concept in the development of spintronics devices. In the last few years this field has experienced a significant boost with the discovery of ultrafast domain wall motions and very low threshold currents in structures designed to stabilize chiral spin textures. Imaging domain-wall spin textures in situ, while fabricating magnetic multilayer structures, is a powerful way to investigate the forces stabilizing this type of chirality, and informs strategies to engineer structures with controlled spin textures. Here, recent results applying spin-polarized low-energy electron microscopy to image chiral domain walls in magnetic multilayer films are summarized. Providing a way to measure the strength of the asymmetric exchange interaction that causes the chirality, this approach can be used to tailor the texture and handedness of magnetic domain walls by interface engineering. These results advance understanding of the underlying physics and offer new insights toward the design of spintronic devices.
Magneto-optical Kerr effect susceptometer for the analysis of magnetic domain wall dynamics.
Kataja, Mikko; van Dijken, Sebastiaan
2011-10-01
Domain wall dynamics in thin magnetic films with perpendicular and in-plane anisotropy is studied using a novel magneto-optical Kerr effect susceptometery method. The method allows for measurements of domain wall motion under ac field excitation and the analysis of dynamic modes as a function of driving frequency and magnetic field amplitude. Domain wall dynamics in the perpendicular anisotropy system, a Co/Pt multilayer, is characterized by thermally activated creep motion. For this dynamic mode, a polydispersivity exponent of β = 0.50 ± 0.03 is derived at small excitation energy, which is in excellent agreement with theoretical models. The dynamics of the other system, a Co wire with transverse uniaxial anisotropy, is dominated by viscous slide motion in a regular magnetic stripe pattern. Analytical expressions are derived for this magnetic configuration and by using these expressions, accurate values for the depinning field and the domain wall mobility are extracted from the susceptibility measurements.
Polarization domain walls in optical fibres as topological bits for data transmission
NASA Astrophysics Data System (ADS)
Gilles, M.; Bony, P.-Y.; Garnier, J.; Picozzi, A.; Guasoni, M.; Fatome, J.
2017-01-01
Domain walls are topological defects that occur at symmetry-breaking phase transitions. Although domain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boundary of neighbouring regions of oppositely aligned magnetic dipoles, their equivalents in optics have not been fully explored so far. Here, we experimentally demonstrate the existence of a universal class of polarization domain walls in the form of localized polarization knots in conventional optical fibres. We exploit their binding properties for optical data transmission beyond the Kerr limits of normally dispersive fibres. In particular, we demonstrate how trapping energy in a well-defined train of polarization domain walls allows undistorted propagation of polarization knots at a rate of 28 GHz along a 10 km length of normally dispersive optical fibre. These results constitute the first experimental observation of kink-antikink solitary wave propagation in nonlinear fibre optics.
Polarization domain walls in optical fibres as topological bits for data transmission.
Gilles, M; Bony, P-Y; Garnier, J; Picozzi, A; Guasoni, M; Fatome, J
2017-02-01
Domain walls are topological defects which occur at symmetry-breaking phase transitions. While domain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boundary of neighbouring regions of oppositely aligned magnetic dipoles, their equivalent in optics have not been fully explored so far. Here, we experimentally demonstrate the existence of a universal class of polarization domain walls in the form of localized polarization knots in conventional optical fibres. We exploit their binding properties for optical data transmission beyond the Kerr limits of normally dispersive fibres. In particular, we demonstrate how trapping energy in well-defined train of polarization domain walls allows undistorted propagation of polarization knots at a rate of 28 GHz along a 10 km length of normally dispersive optical fibre. These results constitute the first experimental observation of kink-antikink solitary wave propagation in nonlinear fibre optics.
Mobile metallic domain walls in an all-in-all-out magnetic insulator.
Ma, Eric Yue; Cui, Yong-Tao; Ueda, Kentaro; Tang, Shujie; Chen, Kai; Tamura, Nobumichi; Wu, Phillip M; Fujioka, Jun; Tokura, Yoshinori; Shen, Zhi-Xun
2015-10-30
Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy. The domain walls have a virtually temperature-independent sheet resistance of ~1 kilohm per square, show smooth morphology with no preferred orientation, are free from pinning by disorders, and have strong thermal and magnetic field responses that agree with expectations for all-in-all-out magnetic order.
Huang, Hao-Ting; Lai, Mei-Feng; Hou, Yun-Fang; Wei, Zung-Hang
2015-05-13
We investigated the influence of magnetic domain walls and magnetic fields on the thermal conductivity of suspended magnetic nanowires. The thermal conductivity of the nanowires was obtained using steady-state Joule heating to measure the change in resistance caused by spontaneous heating. The results showed that the thermal conductivity coefficients of straight and wavy magnetic nanowires decreased with an increase in the magnetic domain wall number, implying that the scattering between magnons and domain walls hindered the heat transport process. In addition, we proved that the magnetic field considerably reduced the thermal conductivity of a magnetic nanowire. The influence of magnetic domain walls and magnetic fields on the thermal conductivity of polycrystalline magnetic nanowires can be attributed to the scattering of long-wavelength spin waves mediated by intergrain exchange coupling.
Domain wall dynamics and relaxation through the frequency dependence of hysteresis loops
NASA Astrophysics Data System (ADS)
Guyot, M.; Merceron, T.; Cagan, V.
1985-04-01
The frequency dependence of hysteresis loops of high purity yttrium iron garnet (YIG) polycrystals has been measured over the range of temperature and frequency where the permeability spectrum has evidenced significant dispersion. Very close to Tc, the effect of domain wall damping results in elliptical loops when the wall relaxation frequency is approached. The observed increase in losses with frequency implies values of the wall damping parameter β which agree with previous determinations from permeability data. In the 150 K range, migrating electrons due to the voluntary slight iron deficiency of the studied sample cannot follow fast wall motions and relax, which in turn produce more rectangular loops for frequencies above the diffusion relaxation frequency. The corresponding increase in hysteresis losses is due to an increase in the wall energy γ and possible dynamical changes of the domain wall configuration in the sample.
Hawking radiation from a Reisner-Nordström domain wall
Greenwood, Eric
2010-01-01
We investigate the effect on the Hawking radiation given off during the time of collapse of a Reisner-Nordström domain wall. Using the functional Schrödinger formalism we are able to probe the time-dependent regime, which is out of the reach of the standard approximations like the Bogolyubov method. We calculate the occupation number of particles for a scalar field and complex scalar field. We demonstrate that the particles from the scalar field are unaffected by the charge of the Reisner-Nordström domain wall, as is expected since the scalar field doesn't carry any charge, which would couple to the charge of the Reisner-Nordström domain wall. Here the situation effectively reduces to the uncharged case, a spherically symmetric domain wall. To take the charge into account, we consider the complex scalar field which represents charged particles and anti-particles. Here investigate two different cases, first the non-extremal case and second the extremal case. In the non-extremal case we demonstrate that when the particle (anti-particle) carries charge opposite to that of the domain wall, the occupation number becomes suppressed during late times of the collapse. Therefore the dominate occupation number is when the particle (anti-particle) carries the same charge as the domain wall, as expected due to the Coulomb potential carried by the domain walls. In the extremal case we demonstrate that as time increases the temperature of the radiation decreases until when the domain wall reaches the horizon and the temperature then goes to zero. This is in agreement with the Hawking temperature for charged black holes.
Collision of domain walls in asymptotically anti-de Sitter spacetime
Takamizu, Yu-ichi; Maeda, Kei-ichi
2006-05-15
We study collision of two domain walls in five-dimensional asymptotically anti-de Sitter spacetime. This may provide the reheating mechanism of an ekpyrotic (or cyclic) brane universe, in which two Bogomol'nyi-Prasad-Sommerfield branes collide and evolve into a hot big bang universe. We evaluate a change of scalar field making the domain wall and can investigate the effect of a negative cosmological term in the bulk to the collision process and the evolution of our universe.
Power-law behavior in the power spectrum induced by Brownian motion of a domain wall
NASA Astrophysics Data System (ADS)
Takesue, Shinji; Mitsudo, Tetsuya; Hayakawa, Hisao
2003-07-01
We show that Brownian motion of a one-dimensional domain wall in a large but finite system yields a ω-3/2 power spectrum. This is successfully applied to the totally asymmetric simple exclusion process with open boundaries. An excellent agreement between our theory and numerical results is obtained in a frequency range where the domain wall motion dominates and the discreteness of the system is not effective.
Elementary depinning processes of magnetic domain walls under fields and currents.
Nguyen, V D; Torres, W Savero; Laczkowski, P; Marty, A; Jamet, M; Beigné, C; Notin, L; Vila, L; Attané, J P
2014-10-01
The probability laws associated to domain wall depinning under fields and currents have been studied in NiFe and FePt nanowires. Three basic domain wall depinning processes, associated to different potential landscapes, are found to appear identically in those systems with very different anisotropies. We show that these processes constitute the building blocks of any complex depinning mechanism. A Markovian analysis is proposed, that provides a unified picture of the depinning mechanism and an insight into the pinning potential landscape.
Voltage drop due to longitudinal spin accumulation across the ballistic domain wall
NASA Astrophysics Data System (ADS)
Fallahi, V.; Safaei, R.
2016-08-01
The ballistic magnetoresistance (MR) of a domain wall constricted in a nanocontact between two p -type semiconducting magnetic nanowires is studied theoretically using the Landauer-Büttiker approach. Our analysis is based on coherent scattering of the carriers by the spin-dependent potential associated with the wall structure. The transmission properties of coherent states are obtained by introducing an algorithm to solve the coupled spin channels Schrödinger equation with mixed Dirichlet-Neumann boundary conditions applied far from the domain wall. Then, the local accumulated spin densities along the nanowire produced by electrical spin injection at the nanocontact are numerically calculated. It is demonstrated that the induced voltage drop due to the longitudinal spin accumulation considerably increases in the case of the narrow domain walls. Furthermore, it is shown that two spin accumulation and mistracking effects give approximately equal contributions to the wall MR ratio in the limit of the sharp domain walls. However, the MR ratio is dominantly determined by the spin accumulation effect as the domain wall width increases.
Magnetic domain walls in bulk and thin film Fe: first principles noncollinear magnetism study
NASA Astrophysics Data System (ADS)
Nakamura, K.; Takeda, Y.; Akiyama, T.; Ito, T.; Freeman, A. J.
2004-03-01
We investigate the electronic and magnetic structures of domain walls in ferromagnetic Fe bulk and Fe(110) monolayer by using the first-principles FLAPW method(Wimmer, Krakauer, Weinert and Freeman, PRB 24, 864(1981)) including noncollinear magnetism with no shape approximation of the magnetization density.(Nakamura, Freeman, Wang, Zhong, and Fernandez-de-Castro, PRB 65, 12402 (2002); 67, 14420 (2003)) In the bulk case, the self-consistent LSDA results demonstrate that the magnetic moments change continuously from one orientation to another as seen in a Bloch wall, and reveal that the formation energy of the domain wall significantly decreases when the domain wall thickness increases, as expected from phenomenological theory. The domain walls in thin film behave very differently: Surprisingly, the magnetic moment directions change rapidly; thus the wall width is only about 8 ÅThis consists and supports the atomically sharp domain wall in Fe/W(110) by the recently proposed SP-STM measurements.(Pratzer, Elmers, Bode, Pietzsch, Kubetzka and Wiesendanger, PRL 87, 127201 (2001))
A summary of staphylococcal C-terminal SH3b_5 cell wall binding domains.
USDA-ARS?s Scientific Manuscript database
Staphylococcal peptidoglycan hydrolases are a potential new source of antimicrobials. A large subset of these proteins contain a C-terminal SH3b_5 cell wall binding domain that has been shown for some to be essential for accurate cell wall recognition and subsequent staphylolytic activity, propert...
Electrical effects of spin density wave quantization and magnetic domain walls in chromium.
Kummamuru, Ravi K; Soh, Yeong-Ah
2008-04-17
The role of magnetic domains (and the walls between domains) in determining the electrical properties of ferromagnetic materials has been investigated in great detail for many years, not least because control over domains offers a means of manipulating electron spin to control charge transport in 'spintronic' devices. In contrast, much less attention has been paid to the effects of domains and domain walls on the electrical properties of antiferromagnets: antiferromagnetic domains show no net external magnetic moment, and so are difficult to manipulate or probe. Here we describe electrical measurements on chromium--a simple metal and quintessential spin density wave antiferromagnet--that show behaviour directly related to spin density wave formation and the presence of antiferromagnetic domains. Two types of thermal hysteresis are seen in both longitudinal and Hall resistivity: the first can be explained by the quantization of spin density waves due to the finite film thickness (confirmed by X-ray diffraction measurements) and the second by domain-wall scattering of electrons. We also observe the striking influence of the electrical lead configuration (a mesoscopic effect) on the resistivity of macroscopic samples in the spin density wave state. Our results are potentially of practical importance, in that they reveal tunable electrical effects of film thickness and domain walls that are as large as the highest seen for ferromagnets.
Velocity asymmetry of Dzyaloshinskii domain walls in the creep and flow regimes.
Vaňatka, M; Rojas-Sánchez, J-C; Vogel, J; Bonfim, M; Belmeguenai, M; Roussigné, Y; Stashkevich, A; Thiaville, A; Pizzini, S
2015-08-19
We have carried out measurements of domain wall dynamics in a Pt/Co/GdOx(t) wedge sample with perpendicular magnetic anisotropy. When driven by an easy-axis field Hz in the presence of an in-plane field Hx, the domain wall propagation is different along [Formula: see text]x, as expected for samples presenting Dzyaloshinskii-Moriya (DMI) interaction. In the creep regime, the sign and the value of the domain wall velocity asymmetry changes along the wedge. We show that in our samples the domain wall speed versus Hx curves in the creep regime cannot be explained simply in terms of the variation of the domain wall energy with Hx, as suggested by previous works. For this reason the strength and the sign of the DMI cannot be extracted from these measurements. To obtain reliable information on the DMI strength using magnetic field-induced domain wall dynamics, measurements have been performed with high fields, bringing the DW close to the flow regime of propagation. In this case we find large values of the DMI, consistent in magnitude and sign with those obtained from Brillouin light scattering measurements.
Domain-Wall Induced Quark Masses in Topologically-Nontrivial Background
NASA Astrophysics Data System (ADS)
Gadiyak, Valeriya; Ji, Xiangdong; Jung, Chulwoo
2000-10-01
Chiral symmetry and its explicit and/or spontaneous breaking are important aspects of strong interaction phenomenology. Chiral dynamics dominates the low-energy hadron structure and interactions. The chiral phase transition at finite temperature has been sought after experimentally for a long time. On the theoretical frontier massless fermions defy the naive nonperturbative treatments. In the last few years, Kaplan and Shamir's domain-wall construction and Narayanan and Neuberger's overlap fermion formalism have emerged as promising approaches to simulating massless quarks. In our work, we aim to study the effectiveness of the domain-wall approach. Following previous studies, we adopt Shamir's version of the domain wall fermion formulation, in which the 5-dimensional Wilson fermion is first introduced. We have studied the induced quark mass resulted from the finite domain wall separation by diagonalizing the hermitian domain-wall Dirac operator in topologically nontrivial configurations. We find the quantum fluctuation strongly enhances the domain-wall effects. However, the effective mass does show an exponential decay as a function of Ls (length of the 5th dimension). Our result on an 8^4 lattice with b=6 is consistent with the effective fermion masses from the Gell-Mann-Oakes-Renner (GMOR) relation, although a detailed analysis shows that the two definitions of the effective mass are not the same. Finally, we comment on the size of Ls needed in a practical Monte Carlo simulation.
Domain wall pinning in FeCoCu bamboo-like nanowires
Berganza, Eider; Bran, Cristina; Jaafar, Miriam; Vázquez, Manuel; Asenjo, Agustina
2016-01-01
The three dimensional nature of cylindrical magnetic nanowires has opened a new way to control the domain configuration as well as the magnetization reversal process. The pinning effect of the periodic diameter modulations on the domain wall propagation in FeCoCu individual nanowires is determined by Magnetic Force Microscopy, MFM. A main bistable magnetic configuration is firstly concluded from MFM images characterized by the spin reversal between two nearly single domain states with opposite axial magnetization. Complementary micromagnetic simulations confirm a vortex mediated magnetization reversal process. A non-standard variable field MFM imaging procedure allows us to observe metastable magnetic states where the propagating domain wall is pinned at certain positions with enlarged diameter. Moreover, it is demonstrated that it is possible to control the position of the pinned domain walls by an external magnetic field. PMID:27406891
Structures of 90{degrees} domain walls in ferroelectric barium titanate ceramics
Normand, L.; Thorel, A.; Kilaas, R.
1995-03-01
Ferroelectric domain walls in tetragonal ferroelectric barium titanate ceramics are studied by means of electron microscopy. SEM and TEM observations are consistent with domain configuration already proposed. Conventional TEM measurements on SADP agree very well with twin-related model currently admitted for ferroelectric domains. In spite of the very small lattice parameter variation during cooling (involving a small spontaneous strain) of BaTiO{sub 3} ceramics, displacements of specific features associated with atomic column positions are measured across domain walls on high resolution images. Using a dedicated image analysis software, these displacements are calculated with a high precision. 2D vector-maps of the atomic displacements show different kinds of atomistic structure for different domain walls.
Domain wall pinning in FeCoCu bamboo-like nanowires
NASA Astrophysics Data System (ADS)
Berganza, Eider; Bran, Cristina; Jaafar, Miriam; Vázquez, Manuel; Asenjo, Agustina
2016-07-01
The three dimensional nature of cylindrical magnetic nanowires has opened a new way to control the domain configuration as well as the magnetization reversal process. The pinning effect of the periodic diameter modulations on the domain wall propagation in FeCoCu individual nanowires is determined by Magnetic Force Microscopy, MFM. A main bistable magnetic configuration is firstly concluded from MFM images characterized by the spin reversal between two nearly single domain states with opposite axial magnetization. Complementary micromagnetic simulations confirm a vortex mediated magnetization reversal process. A non-standard variable field MFM imaging procedure allows us to observe metastable magnetic states where the propagating domain wall is pinned at certain positions with enlarged diameter. Moreover, it is demonstrated that it is possible to control the position of the pinned domain walls by an external magnetic field.
Quantum transport across van der Waals domain walls in bilayer graphene
NASA Astrophysics Data System (ADS)
Abdullah, H. M.; Van Duppen, B.; Zarenia, M.; Bahlouli, H.; Peeters, F. M.
2017-10-01
Bilayer graphene can exhibit deformations such that the two graphene sheets are locally detached from each other resulting in a structure consisting of domains with different van der Waals inter-layer coupling. Here we investigate how the presence of these domains affects the transport properties of bilayer graphene. We derive analytical expressions for the transmission probability, and the corresponding conductance, across walls separating different inter-layer coupling domains. We find that the transmission can exhibit a valley-dependent layer asymmetry and that the domain walls have a considerable effect on the chiral tunnelling properties of the charge carriers. We show that transport measurements allow one to obtain the strength with which the two layers are coupled. We perform numerical calculations for systems with two domain walls and find that the availability of multiple transport channels in bilayer graphene significantly modifies the conductance dependence on inter-layer potential asymmetry.
Pirro, P.; Sebastian, T.; Leven, B.; Hillebrands, B.; Koyama, T.; Brächer, T.
2015-06-08
The interaction of propagating dipolar spin waves with magnetic domain walls is investigated in square-shaped microstructures patterned from the Heusler compound Co{sub 2}Mn{sub 0.6}Fe{sub 0.4}Si. Using magnetic force microscopy, the reversible preparation of a Landau state with four magnetic domains separated by Néel domain walls is confirmed. A local spin-wave excitation using a microstructured antenna is realized in one of the domains. It is shown by Brillouin light scattering microscopy that the domain structure in the remanence state has a strong influence on the spin-wave excitation and propagation. The domain walls strongly reflect the spin waves and can be used as spin-wave reflectors. A comparison with micromagnetic simulations shows that the strong reflection is due to the long-range dipolar interaction which has important implications for the use of these spin waves for exerting an all-magnonic spin-transfer torque.
Direct observation of domain walls in NiFe films using high-resolution Lorentz microscopy
NASA Astrophysics Data System (ADS)
Wong, Bunsen Y.; Laughlin, David E.
1996-04-01
A novel approach to observe the interaction between magnetic domain wall and nanoscale microstructural features is demonstrated. The method is based on Focault mode Lorentz microscopy and utilizes a Gatan energy image filter to provide additional magnification. A postexperimental image processing technique was applied to separate lattice diffraction from that induced by magnetic domains. The effect of NiFe thickness on the width of a 180° Néel wall has been studied. It was found that the thickness dependence has a similar profile to the theoretically predicted trend but the actual wall thickness is smaller than the calculated values.
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
NASA Astrophysics Data System (ADS)
Rojac, Tadej; Bencan, Andreja; Drazic, Goran; Sakamoto, Naonori; Ursic, Hana; Jancar, Bostjan; Tavcar, Gasper; Makarovic, Maja; Walker, Julian; Malic, Barbara; Damjanovic, Dragan
2016-11-01
Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this scenario has not been directly confirmed, leaving a gap in the understanding of the intriguing electrical properties of domain walls. Here, we provide atomic-scale chemical and structural analyses showing the accumulation of charged defects at domain walls in BiFeO3. The defects were identified as Fe4+ cations and bismuth vacancies, revealing p-type hopping conduction at domain walls caused by the presence of electron holes associated with Fe4+. In agreement with the p-type behaviour, we further show that the local domain-wall conductivity can be tailored by controlling the atmosphere during high-temperature annealing. This work has possible implications for engineering local conductivity in ferroelectrics and for devices based on domain walls.
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
NASA Astrophysics Data System (ADS)
Rojac, Tadej; Bencan, Andreja; Drazic, Goran; Sakamoto, Naonori; Ursic, Hana; Jancar, Bostjan; Tavcar, Gasper; Makarovic, Maja; Walker, Julian; Malic, Barbara; Damjanovic, Dragan
2017-03-01
Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this scenario has not been directly confirmed, leaving a gap in the understanding of the intriguing electrical properties of domain walls. Here, we provide atomic-scale chemical and structural analyses showing the accumulation of charged defects at domain walls in BiFeO3. The defects were identified as Fe4+ cations and bismuth vacancies, revealing p-type hopping conduction at domain walls caused by the presence of electron holes associated with Fe4+. In agreement with the p-type behaviour, we further show that the local domain-wall conductivity can be tailored by controlling the atmosphere during high-temperature annealing. This work has possible implications for engineering local conductivity in ferroelectrics and for devices based on domain walls.
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
McQuaid, Raymond G.P.; Campbell, Michael P.; Whatmore, Roger W.; Kumar, Amit; Gregg, J. Marty
2017-01-01
Ferroelectric domain walls constitute a completely new class of sheet-like functional material. Moreover, since domain walls are generally writable, erasable and mobile, they could be useful in functionally agile devices: for example, creating and moving conducting walls could make or break electrical connections in new forms of reconfigurable nanocircuitry. However, significant challenges exist: site-specific injection and annihilation of planar walls, which show robust conductivity, has not been easy to achieve. Here, we report the observation, mechanical writing and controlled movement of charged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl. Walls are straight, tens of microns long and exist as a consequence of elastic compatibility conditions between specific domain pairs. We show that site-specific injection of conducting walls of up to hundreds of microns in length can be achieved through locally applied point-stress and, once created, that they can be moved and repositioned using applied electric fields. PMID:28508870
Controlled creation and displacement of charged domain walls in ferroelectric thin films
Feigl, L.; Sluka, T.; McGilly, L. J.; Crassous, A.; Sandu, C. S.; Setter, N.
2016-01-01
Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes. We demonstrate that ferroelectric switching is accompanied - without exception - by the appearance of charged domain walls and that these walls can be displaced and erased reliably. We ascertain from a combination of scanning probe microscopy, transmission electron microscopy and phase field simulations that creation of charged domain walls is a by-product of, and as such is always coupled to, ferroelectric switching. This is due to the (110) orientation of the tetragonal (Pb,Sr)TiO3 thin films and the crucial role played by the limited conduction of the LSMO bottom electrode layer used in this study. This work highlights that charged domain walls, far from being exotic, unstable structures, as might have been assumed previously, can be robust, stable easily-controlled features in ferroelectric thin films. PMID:27507433
In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition
He, Xinfeng; Xu, Tao; Xu, Xiaofeng; Zeng, Yijie; Xu, Jing; Sun, Litao; Wang, Chunrui; Xing, Huaizhong; Wu, Binhe; Lu, Aijiang; Liu, Dingquan; Chen, Xiaoshuang; Chu, Junhao
2014-01-01
A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space. Here, domain wall dynamics in VO2 insulator-metal phase transition was observed directly by in situ TEM at atom scale. Experimental results depict atom scale evolution of domain morphologies and domain wall exact positions in (202) and (040) planes referring to rutile structure at 50°C. In addition, microscopic mechanism of domain wall dynamics and accurate lattice basis vector relationship of two domains were investigated with the assistance of X-ray diffraction, ab initio calculations and image simulations. This work offers a route to atom scale tunable heterostructure device application. PMID:25292447
Reconfigurable magnetic logic based on the energetics of pinned domain walls
NASA Astrophysics Data System (ADS)
López González, Diego; Casiraghi, Arianna; Van de Wiele, Ben; van Dijken, Sebastiaan
2016-01-01
A magnetic logic concept based on magnetic switching in three stripe domains separated by pinned magnetic domain walls is proposed. The relation between the inputs and the output of the logic operator is determined by the energetics of the domain walls, which can be switched between two distinctive states by an external magnetic field. Together with magnetic read-out along two orthogonal directions, non-volatile AND, OR, NAND, and NOR gates can be created. The logic concept is experimentally demonstrated using CoFeB films on BaTiO3 substrates, and micromagnetic simulations are used to analyze the energetics of the system.
Influence of domain wall interactions on nanosecond switching in magnetic tunnel junctions
NASA Astrophysics Data System (ADS)
Vogel, J.; Kuch, W.; Hertel, R.; Camarero, J.; Fukumoto, K.; Romanens, F.; Pizzini, S.; Bonfim, M.; Petroff, F.; Fontaine, A.; Kirschner, J.
2005-12-01
We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic Fe20Ni80 layer in magnetic tunnel junctionlike FeNi/Al2O3/Co trilayers is considerably lowered by stray fields generated by domain walls present in the hard magnetic Co layer. This internal bias field can significantly increase the local switching speed of the soft layer. The effect is made visible using nanosecond time- and layer-resolved magnetic domain imaging and confirmed by micromagnetic simulations.