Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...
2016-10-31
Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complexmore » polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less
Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; Su, Dong; Chen, Long-Qing; Huang, Guanzhong; Munroe, Paul R.; Valanoor, Nagarajan
2016-10-31
Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr_{x}Ti_{1-x}O_{3} (PZT)/rhombohedral (R) PbZr_{x}Ti_{1-x}O_{3} (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Damodaran, Anoop; Okatan, M. B.; Kacher, J.; ...
2016-02-15
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr1-xTixO3 heterostructuresmore » stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Damodaran, Anoop; Okatan, M. B.; Kacher, J.; Gammer, C.; Vasudevan, Rama; Pandya, S.; Dedon, L. R.; Mangalam, R. V.; Jesse, Stephen; Balke, Nina; Minor, Andrew; Kalinin, Sergei V.; Martin, Lane W. W.
2016-02-15
Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr_{1-x}Ti_{x}O_{3} heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.
Strain phase separation: Formation of ferroelastic domain structures
NASA Astrophysics Data System (ADS)
Xue, Fei; Li, Yongjun; Gu, Yijia; Zhang, Jinxing; Chen, Long-Qing
2016-12-01
Phase decomposition is a well-known process leading to the formation of two-phase mixtures. Here we show that a strain imposed on a ferroelastic crystal promotes the formation of mixed phases and domains, i.e., strain phase separation with local strains determined by a common tangent construction on the free energy versus strain curves. It is demonstrated that a domain structure can be understood using the concepts of domain/phase rule, lever rule, and coherent and incoherent strain phase separation, in a complete analogy to phase decomposition. The proposed strain phase separation model is validated using phase-field simulations and experimental observations of PbTi O3 and BiFe O3 thin films as examples. The proposed model provides a simple tool to guide and design domain structures of ferroelastic systems.
Twinning, Epitaxy and Domain Switching in Ferroelastic Inclusion Compounds
NASA Technical Reports Server (NTRS)
Hollingsworth, Mark D.; Peterson, Matthew L.
2003-01-01
Our research is in the area of solid-state organic chemistry, which lies at the interface between physical organic chemistry and materials science. We use crystalline solids as models to probe fundamental issues about physical processes, molecular interactions and chemical reactions that are important for fabrication, stabilization and application of technological materials. Much of our most recent work has focused on the phenomena of ferroelastic and ferroelectric domain switching, in which application of an external force or electric field to a crystal causes the molecules inside the crystal to reorient, in tandem, to a new orientational state. To better understand and control the domain switching process, we have designed and synthesized over twenty closely related, ferroelastic organic crystals. Our approach has been to use crystalline inclusion compounds, in which one molecule (the guest) is trapped within the crystalline framework of a second molecule (the host). By keeping the host constant and varying the proportions and kinds of guests, it has been possible to tailor these materials so that domain switching is rapid and reversible (which is desirable for high technology applications). Inclusion compounds therefore serve as powerful systems for understanding the specific molecular mechanisms that control domain switching.
Domain structure and magnetic resonance studies of ferroelastic BiVO4 revisited
NASA Astrophysics Data System (ADS)
Choh, Sung Ho; Jang, Min Su
2016-04-01
Bismuth vanadate (BiVO4) is a ferroelastic material undergoing a reversible second order phase transition at 528 K(T c) between the tetragonal and monoclinic structure. There have been experimental studies on the incommensurate domain wall (W‧) which reported different orientation angles. In order to clarify this we have tried to calculate it numerically in terms of lattice constants above and below T c by employing the theory of Sapriel, and obtained it to be either 35.9° or 54.1°. It also turns out that the shear strain (S 21) in the ferroelastic phase depends on the crystal growing condition. The remaining internal stress appears to be responsible for the formation of W‧ wall. The host atom nuclear magnetic resonance and the S-state impurity electron magnetic resonance are also reviewed. The nuclear electric quadrupole interaction of 51V and 209Bi in BiVO4 was evaluated in terms of the point charge model based on the crystal structure. The result of electric field gradient tensor turns out to be reasonable with experimental values. The zero-field splitting tensor of Mn2+, Fe3+ and Gd3+ are also compared, and the deduced local environment of these ions in the host are confirmed. Finally the second-order phase transition according to the Landau’s framework is found in this crystal from the temperature dependence of magnetic resonance parameters. Supported by The National Academy of Sciences, Republic of Korea (2014) through SHC.
Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O{sub 3} thin films
Feigl, L.; McGilly, L. J.; Sandu, C. S.; Setter, N.
2014-04-28
Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr,Ti)O{sub 3} thin films, of very low defect density, grown on DyScO{sub 3} substrates. The effect of 180° switching on well-ordered a/c 90° domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement.
Phillips, L. C.; Cherifi, R. O.; Ivanovskaya, V.; Zobelli, A.; Infante, I. C.; Jacquet, E.; Guiblin, N.; Ünal, A. A.; Kronast, F.; Dkhil, B.; Barthélémy, A.; Bibes, M.; Valencia, S.
2015-01-01
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling between different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific X-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetic and antiferromagnetic states with a small electric field just above room temperature. Imaging and ab initio calculations show the antiferromagnetic phase of FeRh is favoured by compressive strain on c-oriented BaTiO3 domains, and the resultant magnetoelectric coupling is larger and more reversible than previously reported from macroscopic measurements. Our results emphasize the importance of nanoscale ferroic domain structure and the promise of first-order transition materials to achieve enhanced coupling in artificial multiferroics. PMID:25969926
NASA Astrophysics Data System (ADS)
Feigl, L.; Janolin, P.-E.; Yamada, T.; Iwanowska, M.; Sandu, C. S.; Setter, N.
2015-01-01
The dependence of the formation of ferroelastic stripe domain patterns on the thermal history is investigated by detailed piezoresponse force microscopy and X-ray diffraction experiments after and during annealing of tensile strained tetragonal Pb(Ti,Zr)O3 epitaxial thin films on DyScO3 substrates. In particular, the ferroelastic pattern is reversibly interchanged between a cross-hatched and a stripe domain pattern if the films are cooled at different rates after annealing above the formation temperature of a-domains. Different types of 180° and non-180° patterns can be created, depending on the thermal treatment. The changes in the 180° domain structure and lattice parameters are attributed to a change of oxygen vacancy concentration, which results in a modification of the internal electric field and unit cell size, causing also a shift of TC. Thermal treatment is done on rhombohedral La:BiFeO3 thin films as well. It is observed that also in these films, appropriate heat treatment modifies the domain pattern and films with a stripe domain pattern can be created, confirming the general validity of the developed model.
Moving Towards Domain Wall Devices in Ferroics
NASA Astrophysics Data System (ADS)
Gregg, Marty
Domain walls in ferroelectric, ferroelastic and multiferroic oxides are distinct functional materials in their own right. They can be conducting, or even superconducting, when surrounding domains are insulating; they can demonstrate magnetism when the surrounding bulk is non-magnetic and they can contain ordered electrical dipoles when the matrix containing them is non-polar. Since domain walls can also be created, destroyed, and controllably moved from place to place, there is an amazing opportunity for us to design new forms of devices in which functionality is actively and dynamically deployed (now you see it; now you don't). This is the essence of the emerging field known as ``domain wall nanoelectronics''. In time, this arena of research could change the way we think of nanoscale functional devices, moving increasingly towards agile circuitry and neuromorphic device architectures. While the control of domain wall injection, movement and annihilation has been developed rather well in the nanomagnetics community (in race-track and domain wall logic research), similar research has not been widely performed in nanoscale ferroelectrics, ferroelastics and multiferroics. This talk will discuss progress that has been made to date and the way in which nanomagnetics research can be used as a source of inspiration. Site-specific domain wall injection and motion control in both proper and improper ferroelectrics using inhomogeneous electric and elastic fields, as well as dielectric patterning in uniaxial ferroelectrics, will be specifically considered. As will be shown, sufficient control has been developed to allow the creation of a diode for domain wall motion in ferroelectrics, for example. The author acknowledges support from the Engineering and Physical Sciences Research Council (EPSRC).
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-01-01
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T′. The low-symmetry 1T′ phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T′ phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Monolayers of transition metal dichalcogenides with 1T′ structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics. PMID:26906152
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Furthermore, monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers.
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV per chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.
Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin; Li, Ju
2016-02-24
Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between the orientation variants of the 1T' phase. We find that such strain-induced variant switching only requires a few percent elastic strain, which is eminently achievable experimentally with transition metal dichalcogenide monolayers. Calculations indicate that the transformation barrier associated with such variant switching is small (<0.2 eV permore » chemical formula unit), suggesting that strain-induced variant switching can happen under laboratory conditions. Furthermore, monolayers of transition metal dichalcogenides with 1T' structure therefore have the potential to be ferroelastic and shape memory materials with interesting domain physics.« less
NASA Astrophysics Data System (ADS)
Van de Wiele, Ben; Leliaert, Jonathan; Franke, Kévin J. A.; van Dijken, Sebastiaan
2016-03-01
Strong coupling of magnetic domain walls onto straight ferroelastic boundaries of a ferroelectric layer enables full and reversible electric-field control of magnetic domain wall motion. In this paper, the dynamics of this new driving mechanism is analyzed using micromagnetic simulations. We show that transverse domain walls with a near-180° spin structure are stabilized in magnetic nanowires and that electric fields can move these walls with high velocities. Above a critical velocity, which depends on material parameters, nanowire geometry and the direction of domain wall motion, the magnetic domain walls depin abruptly from the ferroelastic boundaries. Depinning evolves either smoothly or via the emission and annihilation of a vortex or antivortex core (Walker breakdown). In both cases, the magnetic domain wall slows down after depinning in an oscillatory fashion and eventually comes to a halt. The simulations provide design rules for hybrid ferromagnetic-ferroelectric domain-wall-based devices and indicate that material disorder and structural imperfections only influence Walker-breakdown-like depinning at high domain wall velocities.
Nakajima, Mitsumasa; Wada, Ayumi; Ehara, Yoshitaka; Funakubo, Hiroshi; Yamada, Tomoaki; Kobayashi, Takeshi
2014-11-21
The effects of bipolar pulse poling on the ferroelastic domain structure and their contribution to the electrical and piezoelectric properties of Pb(Ti{sub 0.7}Zr{sub 0.3})O{sub 3} films are investigated. Micro x-ray diffraction measurements clearly show that the volume fraction of the c-domain increases irreversibly as the poling field is increased, leading to changes in the remanent polarization, dielectric constant, and piezoelectric coefficient. Theoretical estimations well explain the changes of remanent polarization and dielectric constant, but the increase in piezoelectric coefficient is much larger than the theoretical estimation. In-situ x-ray diffraction analysis under an electric field reveals that this disagreement is due to the unexpected activation of the ferroelastic domain wall motion. Our results provide new insight into the poling effect on the electric and piezoelectric properties of ferroelectric films.
Baer, Oliver; Narayanan, Rajamani; Neuberger, Herbert; Witzel, Oliver
2007-03-15
We propose using the extra dimension separating the domain walls carrying lattice quarks of opposite handedness to gradually filter out the ultraviolet fluctuations of the gauge fields that are felt by the fermionic excitations living in the bulk. This generalization of the homogeneous domain wall construction has some theoretical features that seem nontrivial.
A Domain Wall Model for Hysteresis in Ferroelastic Materials
2002-01-01
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Axion domain wall baryogenesis
Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu
2015-07-28
We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m≃10{sup 8}–10{sup 13} GeV and f≃10{sup 13}–10{sup 16} GeV. Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.
Tselev, Alexander; Strelcov, Evgheni; Lukyanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Aandrei
2010-07-06
Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Tselev, Alexander; Strelcov, Evgheni; Lukyanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Andrei
2011-08-09
Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Optical and Acoustic Device Applications of Ferroelastic Crystals
NASA Astrophysics Data System (ADS)
Meeks, Steven Wayne
This dissertation presents the discovery of a means of creating uniformly periodic domain gratings in a ferroelastic crystal of neodymium pentaphosphate (NPP). The uniform and non-uniform domain structures which can be created in NPP have the potential applications as tunable active gratings for lasers, tunable diffraction gratings, tunable Bragg reflection gratings, tunable acoustic filters, optical modulators, and optical domain wall memories. The interaction of optical and acoustic waves with ferroelastic domain walls in NPP is presented in detail. Acoustic amplitude reflection coefficients from a single domain wall in NPP are much larger than other ferroelastic-ferroelectrics such as gadolinium molybdate (GMO). Domain walls of NPP are used to make two demonstration acoustic devices: a tunable comb filter and a tunable delay line. The tuning process is accomplished by moving the position of the reflecting surface (the domain wall). A theory of the reflection of optical waves from NPP domain walls is discussed. The optical reflection is due to a change in the polarization of the wave, and not a change in the index, as the wave crosses the domain wall. Theoretical optical power reflection coefficients show good agreement with the experimentally measured values. The largest optical reflection coefficient of a single domain wall is at a critical angle and is 2.2% per domain wall. Techniques of injecting periodic and aperiodic domain walls into NPP are presented. The nucleation process of the uniformly periodic domain gratings in NPP is described in terms of a newly-discovered domain structure, namely the ferroelastic bubble. A ferroelastic bubble is the elastic analogue to the well-known magnetic bubble. The period of the uniformly periodic domain grating is tunable from 100 to 0.5 microns and the grating period may be tuned relatively rapidly. The Bragg efficiency of these tunable gratings is 77% for an uncoated crystal. Several demonstration devices which use
Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8
NASA Astrophysics Data System (ADS)
Butykai, Ádám; Bordács, Sándor; Kézsmárki, István; Tsurkan, Vladimir; Loidl, Alois; Döring, Jonathan; Neuber, Erik; Milde, Peter; Kehr, Susanne C.; Eng, Lukas M.
2017-03-01
GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four <111> axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.
Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8
Butykai, Ádám; Bordács, Sándor; Kézsmárki, István; Tsurkan, Vladimir; Loidl, Alois; Döring, Jonathan; Neuber, Erik; Milde, Peter; Kehr, Susanne C.; Eng, Lukas M.
2017-01-01
GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four 〈111〉 axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions. PMID:28294193
Tselev, Alexander; Strelcov, Evgheni; Luk'yanchuk, Prof. Igor A.; Ivanov, Ilia N; Budai, John D; Tischler, Jonathan Zachary; Jones, Keith M; Proksch, Roger; Kalinin, Sergei V; Kolmakov, Andrei
2010-01-01
Formation of ferroelastic twin domains in VO_2 nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline vanadium dioxide (VO_2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and non-trivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that complete picture of the phase transitions in single-crystalline and disordered VO_2 structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Electric-field control of magnetic domain wall motion and local magnetization reversal
Lahtinen, Tuomas H. E.; Franke, Kévin J. A.; van Dijken, Sebastiaan
2012-01-01
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics. PMID:22355770
Structure of axionic domain walls
NASA Astrophysics Data System (ADS)
Huang, M. C.; Sikivie, P.
1985-09-01
The structure of axionic domain walls is investigated using the low-energy effective theory of axions and pions. We derive the spatial dependence of the phases of the Peccei-Quinn scalar field and the QCD quark-antiquark condensates inside an axionic domain wall. Thence an accurate estimate of the wall surface energy density is obtained. The equations of motion for axions, photons, leptons, and baryons in the neighborhood of axionic domain walls are written down and estimates are given for the wall reflection and transmission coefficients of these particles. Finally, we discuss the energy dissipation by axionic domain walls oscillating in the early universe due to the reflection of particles in the primordial soup.
Karapetrov, G.; Novosad, V.; Materials Science Division
2010-11-01
Recent years have witnessed a rapid proliferation of electronic gadgets around the world. These devices are used for both communication and entertainment, and it is a fact that they account for a growing portion of household energy consumption and overall world consumption of electricity. Increasing the energy efficiency of these devices could have a far greater and immediate impact than a gradual switch to renewable energy sources. The advances in the area of spintronics are therefore very important, as gadgets are mostly comprised of memory and logic elements. Recent developments in controlled manipulation of magnetic domains in ferromagnet nanostructures have opened opportunities for novel device architectures. This new class of memories and logic gates could soon power millions of consumer electronic devices. The attractiveness of using domain-wall motion in electronics is due to its inherent reliability (no mechanical moving parts), scalability (3D scalable architectures such as in racetrack memory), and nonvolatility (retains information in the absence of power). The remaining obstacles in widespread use of 'racetrack-type' elements are the speed and the energy dissipation during the manipulation of domain walls. In their recent contribution to Physical Review Letters, Oleg Tretiakov, Yang Liu, and Artem Abanov from Texas A&M University in College Station, provide a theoretical description of domain-wall motion in nanoscale ferromagnets due to the spin-polarized currents. They find exact conditions for time-dependent resonant domain-wall movement, which could speed up the motion of domain walls while minimizing Ohmic losses. Movement of domain walls in ferromagnetic nanowires can be achieved by application of external magnetic fields or by passing a spin-polarized current through the nanowire itself. On the other hand, the readout of the domain state is done by measuring the resistance of the wire. Therefore, passing current through the ferromagnetic wire is
Tsukada, Y.; Honma, T.; Komatsu, T.
2009-08-15
Ferroelastic beta'-Gd{sub 2}(MoO{sub 4}){sub 3}, (GMO), crystals are formed through the crystallization of 21.25Gd{sub 2}O{sub 3}-63.75MoO{sub 3}-15B{sub 2}O{sub 3} glass (mol%), and two scientific curious phenomena are observed. (1) GMO crystals formed in the crystallization break into small pieces with a triangular prism or pyramid shape having a length of 50-500 {mu}m spontaneously during the crystallizations in the inside of an electric furnace, not during the cooling in air after the crystallization. This phenomenon is called 'self-powdering phenomenon during crystallization' in this paper. (2) Each self-powdered GMO crystal grain shows a periodic domain structure with different refractive indices, and a spatially periodic second harmonic generation (SHG) depending on the domain structure is observed. It is proposed from polarized micro-Raman scattering spectra and the azimuthal dependence of second harmonic intensities that GMO crystals are oriented in each crystal grain and the orientation of (MoO{sub 4}){sup 2-} tetrahedra in GMO crystals changes periodically due to spontaneous strains in ferroelastic GMO crystals. - Graphical abstract: This figure shows the polarized optical photograph at room temperature for a particle (piece) obtained by a heat treatment of the glass at 590 deg. C for 2 h in an electric furnace in air. This particle was obtained through the self-powdering behavior in the crystallization of glass. The periodic domain structure is observed. Ferroelastic beta'-Gd{sub 2}(MoO{sub 4}){sub 3} crystals are formed in the particle, and second harmonic generations are detected, depending on the domain structure.
Revealing and understanding the behavior of structural domain walls from first principles
NASA Astrophysics Data System (ADS)
Iniguez, Jorge
2015-03-01
Ferroelectric and ferroelastic domain walls (DWs) are becoming the focus of renewed excitement. Modern experimental techniques permit an unprecedented control on domain structures, and it is now possible to produce materials with a large volume fraction occupied by the DWs themselves. Also, recent experiments show that DWs can display distinct properties not present in the domains, which suggests the possibility of using the walls themselves as the functional material in nano-devices. In this talk I will review recent projects in which we have used theory and first-principles simulation to reveal and explain a variety of DW-related effects. The presentation will include the formation of novel two-dimensional crystals at the DWs of a ferroelastic material, the occurrence of ferroic orders (ferroelectric, ferromagnetic) confined at the DWs of various compounds, and cases in which peculiar (and useful) response and switching properties relie on existence of a multi-domain state. I will also summarize experimental evidence for most of these incredible findings, which clearly ratify domain and domain-wall engineering as a powerful strategy to obtain novel functional nano-materials. // Work done in collaboration with many researchers, the main ones being: J.C. Wojdeł (ICMAB-CSIC), C. Magén (INA at U. Zaragoza), M. Mostovoy (U. Groningen), P. Zubko (U. College London), as well as the groups of Beatriz Noheda (U. Groningen), R. Ramesh (UC Berkeley) and J.-M. Triscone (U. Geneva). Supported by MINECO-Spain.
Electric-field-driven domain wall dynamics in perpendicularly magnetized multilayers
NASA Astrophysics Data System (ADS)
López González, Diego; Shirahata, Yasuhiro; Van de Wiele, Ben; Franke, Kévin J. A.; Casiraghi, Arianna; Taniyama, Tomoyasu; van Dijken, Sebastiaan
2017-03-01
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO3 substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO3 substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO3 substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. The application of a magnetic field does not affect the velocity of magnetic domain walls, but independently tailors their internal spin structure, causing a change in domain wall dynamics at high velocities.
Visualizing domain wall and reverse domain superconductivity.
Iavarone, M; Moore, S A; Fedor, J; Ciocys, S T; Karapetrov, G; Pearson, J; Novosad, V; Bader, S D
2014-08-28
In magnetically coupled, planar ferromagnet-superconductor (F/S) hybrid structures, magnetic domain walls can be used to spatially confine the superconductivity. In contrast to a superconductor in a uniform applied magnetic field, the nucleation of the superconducting order parameter in F/S structures is governed by the inhomogeneous magnetic field distribution. The interplay between the superconductivity localized at the domain walls and far from the walls leads to effects such as re-entrant superconductivity and reverse domain superconductivity with the critical temperature depending upon the location. Here we use scanning tunnelling spectroscopy to directly image the nucleation of superconductivity at the domain wall in F/S structures realized with Co-Pd multilayers and Pb thin films. Our results demonstrate that such F/S structures are attractive model systems that offer the possibility to control the strength and the location of the superconducting nucleus by applying an external magnetic field, potentially useful to guide vortices for computing application.
Functional domain walls in multiferroics.
Meier, Dennis
2015-11-25
During the last decade a wide variety of novel and fascinating correlation phenomena has been discovered at domain walls in multiferroic bulk systems, ranging from unusual electronic conductance to inseparably entangled spin and charge degrees of freedom. The domain walls represent quasi-2D functional objects that can be induced, positioned, and erased on demand, bearing considerable technological potential for future nanoelectronics. Most of the challenges that remain to be solved before turning related device paradigms into reality, however, still fall in the field of fundamental condensed matter physics and materials science. In this topical review seminal experimental findings gained on electric and magnetic domain walls in multiferroic bulk materials are addressed. A special focus is put on the physical properties that emerge at so-called charged domain walls and the added functionality that arises from coexisting magnetic order. The research presented in this review highlights that we are just entering a whole new world of intriguing nanoscale physics that is yet to be explored in all its details. The goal is to draw attention to the persistent challenges and identify future key directions for the research on functional domain walls in multiferroics.
NASA Astrophysics Data System (ADS)
Tsukada, Y.; Honma, T.; Komatsu, T.
2009-08-01
Ferroelastic β'-Gd 2(MoO 4) 3, (GMO), crystals are formed through the crystallization of 21.25Gd 2O 3-63.75MoO 3-15B 2O 3 glass (mol%), and two scientific curious phenomena are observed. (1) GMO crystals formed in the crystallization break into small pieces with a triangular prism or pyramid shape having a length of 50-500 μm spontaneously during the crystallizations in the inside of an electric furnace, not during the cooling in air after the crystallization. This phenomenon is called "self-powdering phenomenon during crystallization" in this paper. (2) Each self-powdered GMO crystal grain shows a periodic domain structure with different refractive indices, and a spatially periodic second harmonic generation (SHG) depending on the domain structure is observed. It is proposed from polarized micro-Raman scattering spectra and the azimuthal dependence of second harmonic intensities that GMO crystals are oriented in each crystal grain and the orientation of (MoO 4) 2- tetrahedra in GMO crystals changes periodically due to spontaneous strains in ferroelastic GMO crystals.
Collective magnetism at multiferroic vortex domain walls.
Geng, Yanan; Lee, N; Choi, Y J; Cheong, S-W; Wu, Weida
2012-12-12
Cross-coupled phenomena of multiferroic domains and domain walls are of fundamental scientific and technological interest. Using cryogenic magnetic force microscopy, we find alternating net magnetic moments at ferroelectric domain walls around vortex cores in multiferroic hexagonal ErMnO(3), which correlate with each other throughout the entire vortex network. This collective nature of domain wall magnetism originates from the uncompensated Er(3+) moments at domain walls and the self-organization of the vortex network. Our results demonstrate that the collective domain wall magnetism can be controlled by external magnetic fields and represent a major advancement in the manipulation of local magnetic moments by harnessing cross-coupled domain walls.
Field Evolution of Antiferromagnetic Domains and Domain Walls
NASA Astrophysics Data System (ADS)
Fullerton, Eric E.; Hellwig, Olav; Berger, Andreas K.
2003-03-01
We have used magnetron sputtered [Co(4Å)Pt(7Å)]X Co(4Å)Ru(9Å)N multiplayer films to create artificially layered antiferromagnets. In contrast to atomic antiferromagnets our model system has an antiferromagnetic (AF) exchange energy comparable to the Zeemann energy in moderate fields and allows to fine tune the relative magnitude of the different magnetic energy terms by varying the parameters X and N. With increasing X and N we observe a transition from traditionally observed sharp AF domain walls towards AF domain walls with a finite width which consist of ferromagnetic stripes, i.e. the AF domains have zero net moment whereas the domain walls carry a finite magnetic moment. Such AF domain walls have not been observed before and are a direct consequence of balancing out exchange and Zeeman energy. We also show that such domain walls are expected from theoretical energy calculations. In this contribution we study the nature and field evolution of the AF stripe domain walls by Magnetic Force Microscopy (MFM). The surface sensitivity of MFM and the finite moment of the AF domain walls allow us to image AF domains as well as domain walls. We are showing first experiments to study the AF domain wall evolution in real space while applying an external field. O.H. was supported by the Deutsche Forschungsgemeinschaft via a Forschungsstipendium under the contract number HE 3286/1-1.
Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide
NASA Astrophysics Data System (ADS)
Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.
2014-11-01
Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and
Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.
Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B
2014-11-20
Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and
Giant photovoltaic effect of ferroelectric domain walls in perovskite single crystals
Inoue, Ryotaro; Ishikawa, Shotaro; Imura, Ryota; Kitanaka, Yuuki; Oguchi, Takeshi; Noguchi, Yuji; Miyayama, Masaru
2015-01-01
The photovoltaic (PV) effect in polar materials offers great potential for light-energy conversion that generates a voltage beyond the bandgap limit of present semiconductor-based solar cells. Ferroelectrics have received renewed attention because of the ability to deliver a high voltage in the presence of ferroelastic domain walls (DWs). In recent years, there has been considerable debate over the impact of the DWs on the PV effects, owing to lack of information on the bulk PV tensor of host ferroelectrics. In this article, we provide the first direct evidence of an unusually large PV response induced by ferroelastic DWs—termed ‘DW’-PV effect. The precise estimation of the bulk PV tensor in single crystals of barium titanate enables us to quantify the giant PV effect driven by 90° DWs. We show that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region. This work offers a starting point for further investigation into the DW-PV effect of alternative systems and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form. PMID:26443381
Asymmetric counter propagation of domain walls
NASA Astrophysics Data System (ADS)
Andrade-Silva, I.; Clerc, M. G.; Odent, V.
2016-07-01
Far from equilibrium systems show different states and domain walls between them. These walls, depending on the type of connected equilibria, exhibit a rich spatiotemporal dynamics. Here, we investigate the asymmetrical counter propagation of domain walls in an in-plane-switching cell filled with a nematic liquid crystal. Experimentally, we characterize the shape and speed of the domain walls. Based on the molecular orientation, we infer that the counter propagative walls have different elastic deformations. These deformations are responsible of the asymmetric counter propagating fronts. Theoretically, based on symmetry arguments, we propose a simple bistable model under the influence of a nonlinear gradient, which qualitatively describes the observed dynamics.
Domain walls in antiferromagnetically coupled multilayer films.
Hellwig, Olav; Berger, Andreas; Fullerton, Eric E
2003-11-07
We report experimentally observed magnetic domain-wall structures in antiferromagnetically coupled multilayer films with perpendicular anisotropy. Our studies reveal a first-order phase transition from domain walls with no net moment to domain walls with ferromagnetic cores. The transition originates from the competition between dipolar and exchange energies, which we tune by means of layer thickness. Although observed in a synthetic antiferromagnetic system, such domain-wall structures may be expected to occur in A-type antiferromagnets with anisotropic exchange coupling.
Strain intermittency due to avalanches in ferroelastic and porous materials.
Soprunyuk, Viktor; Puchberger, Sabine; Tröster, Andreas; Vives, Eduard; Salje, Ekhard; Schranz, Wilfried
2017-04-06
The avalanche statistics in porous materials and ferroelastic domain wall systems has been studied for slowly increasing compressive uniaxial stress with stress rates between 0.2 and 17 kPa/s. Velocity peaks v_{m}=dh/dt are calculated from the measured strain drops and used to determine the corresponding Energy distributions N(E = v_{m}^{2}). Power law distributions N(v_{m}^{2}) ~(v_{m}^{2})^{-ε} have been obtained over 4-6 decades. For most of the porous materials and domain wall systems an exponent ε= 1.5 ± 0.1 was obtained in good agreement with mean-field theory of the interface pinning transition. For charcoal, shale and calcareous schist we found significant deviations of the exponents from mean-field values in agreement with recent acoustic emission experiments.
Skumryev, V; Laukhin, V; Fina, I; Martí, X; Sánchez, F; Gospodinov, M; Fontcuberta, J
2011-02-04
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO(3) is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and antiferromagnetic domain walls. Their distinct dynamics are essential for the observed magnetic switching.
Automotion of domain walls for spintronic interconnects
Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.
2014-06-07
We simulate “automotion,” the transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate without longitudinal charge current transfer, with only a transient current pulse at domain wall creation and have favorable scaling down to the 20 nm dimension. Cases of both in-plane and out-of-plane magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, attenuation and disappearance, and reflection of domain walls are demonstrated through simulation. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.
Ferroelastic twin structures in epitaxial WO3 thin films
NASA Astrophysics Data System (ADS)
Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho
2015-12-01
Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.
Chiral spin torque at magnetic domain walls.
Ryu, Kwang-Su; Thomas, Luc; Yang, See-Hun; Parkin, Stuart
2013-07-01
Spin-polarized currents provide a powerful means of manipulating the magnetization of nanodevices, and give rise to spin transfer torques that can drive magnetic domain walls along nanowires. In ultrathin magnetic wires, domain walls are found to move in the opposite direction to that expected from bulk spin transfer torques, and also at much higher speeds. Here we show that this is due to two intertwined phenomena, both derived from spin-orbit interactions. By measuring the influence of magnetic fields on current-driven domain-wall motion in perpendicularly magnetized Co/Ni/Co trilayers, we find an internal effective magnetic field acting on each domain wall, the direction of which alternates between successive domain walls. This chiral effective field arises from a Dzyaloshinskii-Moriya interaction at the Co/Pt interfaces and, in concert with spin Hall currents, drives the domain walls in lock-step along the nanowire. Elucidating the mechanism for the manipulation of domain walls in ultrathin magnetic films will enable the development of new families of spintronic devices.
Deterministic control of ferroelastic switching in multiferroic materials.
Balke, N; Choudhury, S; Jesse, S; Huijben, M; Chu, Y H; Baddorf, A P; Chen, L Q; Ramesh, R; Kalinin, S V
2009-12-01
Multiferroic materials showing coupled electric, magnetic and elastic orderings provide a platform to explore complexity and new paradigms for memory and logic devices. Until now, the deterministic control of non-ferroelectric order parameters in multiferroics has been elusive. Here, we demonstrate deterministic ferroelastic switching in rhombohedral BiFeO(3) by domain nucleation with a scanning probe. We are able to select among final states that have the same electrostatic energy, but differ dramatically in elastic or magnetic order, by applying voltage to the probe while it is in lateral motion. We also demonstrate the controlled creation of a ferrotoroidal order parameter. The ability to control local elastic, magnetic and torroidal order parameters with an electric field will make it possible to probe local strain and magnetic ordering, and engineer various magnetoelectric, domain-wall-based and strain-coupled devices.
Domain wall magneto-Seebeck effect
NASA Astrophysics Data System (ADS)
Krzysteczko, Patryk; Hu, Xiukun; Liebing, Niklas; Sievers, Sibylle; Schumacher, Hans W.
2015-10-01
The interplay between charge, spin, and heat currents in magnetic nanostructures subjected to a temperature gradient has led to a variety of novel effects and promising applications studied in the fast-growing field of spin caloritronics. Here, we explore the magnetothermoelectrical properties of an individual magnetic domain wall in a permalloy nanowire. In thermal gradients of the order of few K /μ m along the long wire axis, we find a clear magneto-Seebeck signature due to the presence of a single domain wall. The observed domain wall magneto-Seebeck effect can be explained by the magnetization-dependent Seebeck coefficient of permalloy in combination with the local spin configuration of the domain wall.
Microwave background distortions from domain walls
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1990-01-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. It was found that the maximal redshift distortion for both spherical and planar walls is of the order pi G sigma H(sup -1)(sub 0), where sigma is the surface energy density and H(sup -1)(sub 0) the Hubble parameter. It was also found that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e., the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor gamma the redshift distortion is enhanced by gamma cubed.
Microwave background distortions from domain walls
NASA Astrophysics Data System (ADS)
Goetz, Guenter; Noetzold, Dirk
1990-08-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. It was found that the maximal redshift distortion for both spherical and planar walls is of the order pi G sigma H(sup -1)(sub 0), where sigma is the surface energy density and H(sup -1)(sub 0) the Hubble parameter. It was also found that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e., the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor gamma the redshift distortion is enhanced by gamma cubed.
Microwave background distortions from domain walls.
NASA Astrophysics Data System (ADS)
Goetz, G.; Nötzold, D.
1991-03-01
Domain walls arising in a cosmic phase transition after decoupling were recently proposed as seeds for the formation of large-scale structure. The distortion induced in the microwave background radiation is calculated in dependence of the wall thickness, surface density, scalar field potential, cosmic redshift and the velocity of the wall. The authors find that the maximal redshift distortion for both spherical and planar walls is of the order πGσH0-1, where σ is the surface energy density and H0 the Hubble parameter. They also find that, for a wall thickness smaller than the horizon, walls can be treated as infinitely thin, i.e. the redshift distortion is independent of the wall thickness and the specific form of the scalar potential. For planar walls moving with a Lorentz-factor γ the redshift distortion is enhanced by γ3.
Magnetic domain and domain wall in Co/Pt multilayer
NASA Astrophysics Data System (ADS)
Talapatra, A.; Mohanty, J.
2016-05-01
We report systematic micromagnetic investigation of formation of magnetic domains in perpendicularly magnetized Co/Pt multilayer with the variation in magnetic anisotropy and stack thickness. The lowering of anisotropy makes the domain wall broader and domain formation less efficient. Domain sizeincreases with increasing thickness of the stack to minimize the stray field energy.The minimization of energy of the system due to domain formation makes the M-H loop narrower whereas, lower stack thickness results in a wider loop. The magnetization reversalin this system occurs due tothe nucleation and growth of reverse domains.
Low-temperature thermal conductivity of ferroelastic Gd 2(MoO 4) 3
NASA Astrophysics Data System (ADS)
Mielcarek, S.; Mróz, B.; Tylczyński, Z.; Piskunowicz, P.; Trybuła, Z.; Bromberek, M.
2001-05-01
Thermal conductivity, k, of GMO crystal has been measured in temperatures from 0.5 to 80 K. The maximum of k appears at 18 K and its value depends on the current domain state of the sample. The ferroelastic domain walls and antiphase boundaries, characterised by elastic inhomogeneities, are responsible for additional phonon scattering and a decrease in the thermal conductivity. The deviation of the temperature dependence of thermal conductivity from the classical Debye theory observed below 4 K is related to the anomalous behaviour of specific heat in the region of the antiferromagnetic transition at T N=0.3 K .
Structural domain walls in polar hexagonal manganites
NASA Astrophysics Data System (ADS)
Kumagai, Yu
2014-03-01
The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.
Robust ferromagnetism carried by antiferromagnetic domain walls
NASA Astrophysics Data System (ADS)
Hirose, Hishiro T.; Yamaura, Jun-Ichi; Hiroi, Zenji
2017-02-01
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics.
Robust ferromagnetism carried by antiferromagnetic domain walls
Hirose, Hishiro T.; Yamaura, Jun-ichi; Hiroi, Zenji
2017-01-01
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics. PMID:28195565
Robust ferromagnetism carried by antiferromagnetic domain walls.
Hirose, Hishiro T; Yamaura, Jun-Ichi; Hiroi, Zenji
2017-02-14
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd2Os2O7 carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while, once cooled down, they are surprisingly robust even in an inverse magnetic field of 7 T. Thus, the magnetic domain walls could serve as a new-type of microscopic, switchable and electrically readable magnetic medium which is potentially important for future applications in the domain wall nanoelectronics.
Dielectric dispersion due to weak domain wall pinning in RbH2PO4
NASA Astrophysics Data System (ADS)
Mueller, Volkmar; Shchur, Yaroslav; Beige, Horst; Mattauch, Stefan; Glinnemann, Jürgen; Heger, Gernot
2002-04-01
Dielectric spectroscopy experiments are carried out in the ferroelectric phase of rubidium dihydrogen phosphate (RbH2PO4), within the frequency range 0.1 Hz
Tunable inertia of chiral magnetic domain walls
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-01-01
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii–Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii–Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices. PMID:27882932
Tunable inertia of chiral magnetic domain walls
NASA Astrophysics Data System (ADS)
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-11-01
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii-Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices.
Tunable inertia of chiral magnetic domain walls.
Torrejon, Jacob; Martinez, Eduardo; Hayashi, Masamitsu
2016-11-24
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya exchange constant. The time needed to accelerate a domain wall with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the Dzyaloshinskii-Moriya exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral domain walls. Such unique feature of chiral domain walls can be utilized to move and position domain walls with lower current, key to the development of storage class memory devices.
On thick domain walls in general relativity
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1989-01-01
Planar scalar field configurations in general relativity differ considerably from those in flat space. It is shown that static domain walls of finite thickness in curved space-time do not possess a reflection symmetry. At infinity, the space-time tends to the Taub vacuum on one side of the wall and to the Minkowski vacuum (Rindler space-time) on the other. Massive test particles are always accelerated towards the Minkowski side, i.e., domain walls are attractive on the Taub side, but repulsive on the Minkowski side (Taub-vacuum cleaner). It is also proved that the pressure in all directions is always negative. Finally, a brief comment is made concerning the possibility of infinite, i.e., bigger than horizon size, domain walls in our universe. All of the results are independent of the form of the potential V(phi) greater than or equal to 0 of the scalar field phi.
The interaction of transverse domain walls.
Krüger, Benjamin
2012-01-18
The interaction between transverse domain walls is calculated analytically using a multipole expansion up to third order. Starting from an analytical expression for the magnetization in the wall, the monopole, dipole, and quadrupole moments are derived and their impact on the interaction is investigated using the surface and volume charges. The surface charges are important for the dipole moment while the volume charges constitute the monopole and quadrupole moments. For domain walls that are situated in different wires it is found that there is a strong deviation from the interaction of two monopoles. This deviation is caused by the interaction of the monopole of the wall in the first wire with the dipole of the wall in the second wire and vice versa. The dipole-dipole and the quadrupole-monopole interactions are found to be also of considerable size and non-negligible. A comparison with micromagnetic simulations shows a good agreement.
Anomalous feedback and negative domain wall resistance
NASA Astrophysics Data System (ADS)
Cheng, Ran; Zhu, Jian-Gang; Xiao, Di
2016-11-01
Magnetic induction can be regarded as a negative feedback effect, where the motive-force opposes the change of magnetic flux that generates the motive-force. In artificial electromagnetics emerging from spintronics, however, this is not necessarily the case. By studying the current-induced domain wall dynamics in a cylindrical nanowire, we show that the spin motive-force exerting on electrons can either oppose or support the applied current that drives the domain wall. The switching into the anomalous feedback regime occurs when the strength of the dissipative torque β is about twice the value of the Gilbert damping constant α. The anomalous feedback manifests as a negative domain wall resistance, which has an analogy with the water turbine.
Domain wall orientation in magnetic nanowires.
Vedmedenko, E Y; Kubetzka, A; von Bergmann, K; Pietzsch, O; Bode, M; Kirschner, J; Oepen, H P; Wiesendanger, R
2004-02-20
Scanning tunneling microscopy reveals that domain walls in ultrathin Fe nanowires are oriented along a certain crystallographic direction, regardless of the orientation of the wires. Monte Carlo simulations on a discrete lattice are in accordance with the experiment if the film relaxation is taken into account. We demonstrate that the wall orientation is determined by the atomic lattice and the resulting strength of an effective exchange interaction. The magnetic anisotropy and the magnetostatic energy play a minor role for the wall orientation in that system.
The dynamics of domain walls and strings
NASA Technical Reports Server (NTRS)
Gregory, Ruth; Haws, David; Garfinkle, David
1989-01-01
The leading order finite-width corrections to the equation of motion describing the motion of a domain wall are derived. The regime in which this equation of motion is invalid is discussed. Spherically and cylindrically symmetric solutions to this equation of motion are found. A misconception that has arisen in recent years regarding the rigidity (or otherwise) of cosmic strings is also clarified.
Separated matter and antimatter domains with vanishing domain walls
Dolgov, A.D.; Godunov, S.I.; Rudenko, A.S.; Tkachev, I.I. E-mail: sgodunov@itep.ru E-mail: tkachev@ms2.inr.ac.ru
2015-10-01
We present a model of spontaneous (or dynamical) C and CP violation where it is possible to generate domains of matter and antimatter separated by cosmologically large distances. Such C(CP) violation existed only in the early universe and later it disappeared with the only trace of generated baryonic and/or antibaryonic domains. So the problem of domain walls in this model does not exist. These features are achieved through a postulated form of interaction between inflaton and a new scalar field, realizing short time C(CP) violation.
Tunable resistivity of individual magnetic domain walls.
Franken, J H; Hoeijmakers, M; Swagten, H J M; Koopmans, B
2012-01-20
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width Δ, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real time. A 1/Δ(2) dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.
Adaptive ferroelectric states in systems with low domain wall energy: Tetragonal microdomains
NASA Astrophysics Data System (ADS)
Jin, Y. M.; Wang, Y. U.; Khachaturyan, A. G.; Li, J. F.; Viehland, D.
2003-09-01
Ferroelectric and ferroelastic phases with very low domain wall energies have been shown to form miniaturized microdomain structures. A theory of an adaptive ferroelectric phase has been developed to predict the microdomain-averaged crystal lattice parameters of this structurally inhomogeneous state. The theory is an extension of conventional martensite theory, applied to ferroelectric systems with very low domain wall energies. The case of ferroelectric microdomains of tetragonal symmetry is considered. It is shown for such a case that a nanoscale coherent mixture of microdomains can be interpreted as an adaptive ferroelectric phase, whose microdomain-averaged crystal lattice is monoclinic. The crystal lattice parameters of this monoclinic phase are self-adjusting parameters, which minimize the transformation stress. Self-adjustment is achieved by application of the invariant plane strain to the parent cubic lattice, and the value of the self-adjusted parameters is a linear superposition of the lattice constants of the parent and product phases. Experimental investigations of Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystals confirm many of the predictions of this theory.
Scaling properties of multitension domain wall networks
NASA Astrophysics Data System (ADS)
Oliveira, M. F.; Martins, C. J. A. P.
2015-02-01
We study the asymptotic scaling properties of domain wall networks with three different tensions in various cosmological epochs. We discuss the conditions under which a scale-invariant evolution of the network (which is well established for simpler walls) still applies and also consider the limiting case where defects are locally planar and the curvature is concentrated in the junctions. We present detailed quantitative predictions for scaling densities in various contexts, which should be testable by means of future high-resolution numerical simulations.
Antiferromagnetic domain wall motion driven by spin-orbit torques
Shiino, Takayuki; Oh, Se-Hyeok; Haney, Paul M.; Lee, Seo-Won; Go, Gyungchoon; Park, Byong-Guk; Lee, Kyung-Jin
2016-01-01
We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves in the terahertz frequency range. The interplay between spin-orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals from antiferromagnets. PMID:27588878
Skyrmion domain wall collision and domain wall-gated skyrmion logic
NASA Astrophysics Data System (ADS)
Xing, Xiangjun; Pong, Philip W. T.; Zhou, Yan
2016-08-01
Skyrmions and domain walls are significant spin textures of great technological relevance to magnetic memory and logic applications, where they can be used as carriers of information. The unique topology of skyrmions makes them display emergent dynamical properties as compared with domain walls. Some studies have demonstrated that the two topologically inequivalent magnetic objects could be interconverted by using cleverly designed geometric structures. Here, we numerically address the skyrmion domain wall collision in a magnetic racetrack by introducing relative motion between the two objects based on a specially designed junction. An electric current serves as the driving force that moves a skyrmion toward a trapped domain wall pair. We see different types of collision dynamics depending on the driving parameters. Most importantly, the modulation of skyrmion transport using domain walls is realized in this system, allowing a set of domain wall-gated logical NOT, NAND, and NOR gates to be constructed. This work provides a skyrmion-based spin-logic architecture that is fully compatible with racetrack memories.
Magnetic domain-wall racetrack memory.
Parkin, Stuart S P; Hayashi, Masamitsu; Thomas, Luc
2008-04-11
Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
Domain wall motion by localized temperature gradients
NASA Astrophysics Data System (ADS)
Moretti, Simone; Raposo, Victor; Martinez, Eduardo; Lopez-Diaz, Luis
2017-02-01
Magnetic domain wall (DW) motion induced by a localized Gaussian temperature profile is studied in a Permalloy nanostrip within the framework of the stochastic Landau-Lifshitz-Bloch equation. The different contributions to thermally induced DW motion, entropic torque and magnonic spin transfer torque, are isolated and compared. The analysis of magnonic spin transfer torque includes a description of thermally excited magnons in the sample. A third driving force due to a thermally induced dipolar field is found and described. Finally, thermally induced DW motion is studied under realistic conditions by taking into account the edge roughness. The results give quantitative insights into the different mechanisms responsible for domain wall motion in temperature gradients and allow for comparison with experimental results.
Domain wall motion in ferroelectrics: Barkhausen noise
NASA Astrophysics Data System (ADS)
Shur, V.; Rumyantsev, E.; Kozhevnikov, V.; Nikolaeva, E.; Shishkin, E.
2002-03-01
The switching current noise has been recorded during polarization reversal in single-crystalline gadolinium molybdate (GMO) and lithium tantalate (LT). Analysis of Barkhausen noise (BN) data allows to classify the noise types by determination of the critical indexes and fractal dimensions. BN is manifested as the short pulses during the polarization reversal. We have analyzed the BN data recorded in GMO and LT with various types of controlled domain structure. The data treatment in terms of probability distribution of duration, area and energy of individual pulses reveals the critical behavior typical for the fractal records in time. We used the Fourier transform and Hurst's rescaled range analysis for obtaining the Hurst factor, fractal dimension and classifying the noise types. We investigated by computer simulation the mechanism of sideways motion of 180O domain wall by nucleation at the wall taking into account the nuclei-nuclei interaction. It was shown that the moving domain walls display the fractal shape and their motion is accompanied by Flicker noise, which is in accord with experimental data. The research was made possible in part by Programs "Basic Research in Russian Universities" and "Priority Research in High School. Electronics", by Grant No. 01-02-17443 of RFBR, by Award No.REC-005 of CRDF.
Domain walls in ω-phase transformations
NASA Astrophysics Data System (ADS)
Sanati, Mahdi; Saxena, Avadh
1998-11-01
The β-phase (body-centered cubic: b.c.c.) to ω-phase transformation in certain elements (e.g. Zr) and alloys (e.g. ZrNb) is induced either by quenching or application of pressure. The ω-phase is a metastable state and usually coexists with the β-matrix in the form of small particles. To study the formation of domain walls in these materials we have extended the Landau model of Cook for the ω-phase transition by including a spatial gradient (Ginzburg) term of the scalar order parameter. In general, the Landau free energy is an asymmetric double-well potential. From the variational derivative of the total free energy we obtain a static equilibrium condition. By solving this equation for different physical parameters and boundary conditions, we obtained different quasi-one-dimensional soliton-like solutions. These solutions correspond to three different types of domain walls between the ω-phase and the β-matrix. In addition, we obtained soliton lattice (domain wall array) solutions, calculated their formation energy and the asymptotic interaction between the solitons.
Correlation between spin structure oscillations and domain wall velocities
Bisig, André; Stärk, Martin; Mawass, Mohamad-Assaad; Moutafis, Christoforos; Rhensius, Jan; Heidler, Jakoba; Büttner, Felix; Noske, Matthias; Weigand, Markus; Eisebitt, Stefan; Tyliszczak, Tolek; Van Waeyenberge, Bartel; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2013-01-01
Magnetic sensing and logic devices based on the motion of magnetic domain walls rely on the precise and deterministic control of the position and the velocity of individual magnetic domain walls in curved nanowires. Varying domain wall velocities have been predicted to result from intrinsic effects such as oscillating domain wall spin structure transformations and extrinsic pinning due to imperfections. Here we use direct dynamic imaging of the nanoscale spin structure that allows us for the first time to directly check these predictions. We find a new regime of oscillating domain wall motion even below the Walker breakdown correlated with periodic spin structure changes. We show that the extrinsic pinning from imperfections in the nanowire only affects slow domain walls and we identify the magnetostatic energy, which scales with the domain wall velocity, as the energy reservoir for the domain wall to overcome the local pinning potential landscape. PMID:23978905
Correlation between spin structure oscillations and domain wall velocities.
Bisig, André; Stärk, Martin; Mawass, Mohamad-Assaad; Moutafis, Christoforos; Rhensius, Jan; Heidler, Jakoba; Büttner, Felix; Noske, Matthias; Weigand, Markus; Eisebitt, Stefan; Tyliszczak, Tolek; Van Waeyenberge, Bartel; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2013-01-01
Magnetic sensing and logic devices based on the motion of magnetic domain walls rely on the precise and deterministic control of the position and the velocity of individual magnetic domain walls in curved nanowires. Varying domain wall velocities have been predicted to result from intrinsic effects such as oscillating domain wall spin structure transformations and extrinsic pinning due to imperfections. Here we use direct dynamic imaging of the nanoscale spin structure that allows us for the first time to directly check these predictions. We find a new regime of oscillating domain wall motion even below the Walker breakdown correlated with periodic spin structure changes. We show that the extrinsic pinning from imperfections in the nanowire only affects slow domain walls and we identify the magnetostatic energy, which scales with the domain wall velocity, as the energy reservoir for the domain wall to overcome the local pinning potential landscape.
Quantum properties of charged ferroelectric domain walls
NASA Astrophysics Data System (ADS)
Sturman, B.; Podivilov, E.; Stepanov, M.; Tagantsev, A.; Setter, N.
2015-12-01
We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this potential, dependencies on the ferroelectric characteristics, as well as the spatial structure and formation energy of the wall. Our description is based on the Hartree and Thomas-Fermi methods and Landau theory for the ferroelectric transitions. Changeover from a few to many quantum levels (with the electron binding energies ˜1 eV) is controlled by a single characteristic parameter. The quantum models well describe the core of the wall, whose width is typically ˜10 nm. Additionally, the walls possess pronounced long-range tails which are due to trap recharging. For the trap concentration Nt=(1017-1018) cm-3 , the tail length ℓ is of the μ m scale. On the distances much larger than ℓ the walls are electrically uncoupled from each other and the crystal faces.
PREFACE: Domain wall dynamics in nanostructures Domain wall dynamics in nanostructures
NASA Astrophysics Data System (ADS)
Marrows, C. H.; Meier, G.
2012-01-01
Domain structures in magnetic materials are ubiquitous and have been studied for decades. The walls that separate them are topological defects in the magnetic order parameter and have a wide variety of complex forms. In general, their investigation is difficult in bulk materials since only the domain structure on the surface of a specimen is visible. Cutting the sample to reveal the interior causes a rearrangement of the domains into a new form. As with many other areas of magnetism, the study of domain wall physics has been revitalised by the advent of nanotechnology. The ability to fabricate nanoscale structures has permitted the formation of simplified and controlled domain patterns; the development of advanced microscopy methods has permitted them to be imaged and then modelled; subjecting them to ultrashort field and current pulses has permitted their dynamics to be explored. The latest results from all of these advances are described in this special issue. Not only has this led to results of great scientific beauty, but also to concepts of great applicability to future information technologies. In this issue the reader will find the latest results for these domain wall dynamics and the high-speed processes of topological structures such as domain walls and magnetic vortices. These dynamics can be driven by the application of magnetic fields, or by flowing currents through spintronic devices using the novel physics of spin-transfer torque. This complexity has been studied using a wide variety of experimental techniques at the edge of the spatial and temporal resolution currently available, and can be described using sophisticated analytical theory and computational modelling. As a result, the dynamics can be engineered to give rise to finely controlled memory and logic devices with new functionality. Moreover, the field is moving to study not only the conventional transition metal ferromagnets, but also complex heterostructures, novel magnets and even other
Polarization control at spin-driven ferroelectric domain walls.
Leo, Naëmi; Bergman, Anders; Cano, Andres; Poudel, Narayan; Lorenz, Bernd; Fiebig, Manfred; Meier, Dennis
2015-04-14
Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.
Magnetization reversal in ferromagnetic spirals via domain wall motion
NASA Astrophysics Data System (ADS)
Schumm, Ryan D.; Kunz, Andrew
2016-11-01
Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.
Origin of stationary domain wall enhanced ferroelectric susceptibility
NASA Astrophysics Data System (ADS)
Liu, Shi; Cohen, R. E.
2017-03-01
Ferroelectrics usually adopt a multidomain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric materials. The enhancement of low-field susceptibility/permittivity under subswitching conditions is usually attributed to reversible domain wall vibration. Recent experiments highlight the stationary domain wall contribution to the dielectric susceptibility irrespective of any lateral displacements or deformations of the wall. We study the effects of domain walls on the low-field permittivity of PbTiO3 with density functional theory and molecular dynamics simulations. The static dielectric constant is calculated as a function of increasing domain wall density and temperature. We find an increase of dielectric permittivity with increasing domain wall density, which is expected to occur at a low driving field where the lateral motion of domain walls is forbidden. Real-space decomposition of the dielectric response reveals that frustrated dipoles within the finite width of the domain walls are responsible for the enhanced low-field permittivity. We explain the 100 % enhancement of the dielectric susceptibility form domain walls, which arises from the softer potential wells within them.
Field tuning of ferromagnetic domain walls on elastically coupled ferroelectric domain boundaries
NASA Astrophysics Data System (ADS)
Franke, Kévin J. A.; Lahtinen, Tuomas H. E.; van Dijken, Sebastiaan
2012-03-01
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90∘ ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switching between both wall types reverses the wall chirality and abruptly changes the width of the ferromagnetic domain walls by up to 1000%.
Tunable conductance of magnetic nanowires with structured domain walls.
Dugaev, V K; Berakdar, J; Barnaś, J
2006-02-03
We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure increases strongly when these size-quantized states are tuned on resonance with the Fermi energy, e.g., upon varying the distance between the domain walls which results in resonance-type peaks of the wire conductance. This novel phenomenon is shown to be utilizable to manipulate the spin density in the domain vicinity. The domain wall parameters are readily controllable, and the predicted effect is hence exploitable in spintronic devices.
NASA Astrophysics Data System (ADS)
Jones, Jacob L.; Hoffman, Mark; Daniels, John E.; Studer, Andrew J.
2006-11-01
Ferroelastic domain switching during dynamic actuation is measured in situ for a piezoelectric lead zirconate titanate (PZT) ceramic utilizing a new capability developed on The Australian Strain Scanner (TASS) at ANSTO. Diffraction patterns are obtained as a function of time during a 1 Hz cycle. The change in the 0 0 2 and 2 0 0 diffraction intensities indicates there is ferroelastic domain switching at sub-coercive (weak) fields.
Ferroelastic twin structures in epitaxial WO{sub 3} thin films
Yun, Shinhee; Woo, Chang-Su; Lee, Jin Hong; Chu, Kanghyun; Kim, Gi-Yeop; Choi, Si-Young; Sharma, Pankaj; Seidel, Jan; Song, Jong Hyun; Chung, Sung-Yoon; Yang, Chan-Ho
2015-12-21
Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.
Domain wall orientation and domain shape in KTiOPO4 crystals
NASA Astrophysics Data System (ADS)
Shur, V. Ya.; Vaskina, E. M.; Pelegova, E. V.; Chuvakova, M. A.; Akhmatkhanov, A. R.; Kizko, O. V.; Ivanov, M.; Kholkin, A. L.
2016-09-01
Domain shape evolution and domain wall motion have been studied in KTiOPO4 (KTP) ferroelectric single crystals using complementary experimental methods. The in situ visualization of domain kinetics has allowed revealing: (1) qualitative change of the domain shape, (2) dependence of the domain wall velocity on its orientation, (3) jump-like domain wall motion caused by domain merging, (4) effect of domain shape stability. The model of domain wall motion driven by generation of elementary steps (kink-pair nucleation) and subsequent kink motion is presented. The decrease in the relative velocity of the approaching parallel domain walls is attributed to electrostatic interaction. The effect of polarization reversal induced by chemical etching is observed. The obtained results are important for the development of domain engineering in the crystals of KTP family.
Domain Wall Architecture in Tetragonal Ferroelectric Thin Films.
De Luca, Gabriele; Rossell, Marta D; Schaab, Jakob; Viart, Nathalie; Fiebig, Manfred; Trassin, Morgan
2017-02-01
Non-Ising-like 180° ferroelectric domain wall architecture and domain distribution in tetragonal PbZrx Ti1-x O3 thin films are probed using a combination of optical second harmonic generation and scanning transmission electron microscopy. In the remnant state, a specific nonlinear optical signature of tilted 180° domain walls corresponding to a mixed Ising-Néel-type rotation of polarization across the wall is shown.
Dynamic dependence to domain wall propagation through artificial spin ice
NASA Astrophysics Data System (ADS)
Burn, D. M.; Chadha, M.; Branford, W. R.
2017-03-01
Domain wall propagation dynamics has been studied in nanostructured artificial kagome spin-ice structures. A stripline circuit has been used to provide localized pulsed magnetic fields within the artificial spin-ice (ASI) structure. This provides control of the system through electrically assisted domain wall nucleation events. Synchronization of the pulsed fields with additional global magnetic fields and the use of a focused magneto-optical Kerr effect magnetometer allows our experiments to probe the domain wall transit through an extended ASI structure. We find that the propagation distance depends on the driving field revealing field-driven properties of domain walls below their intrinsic nucleation field.
Power optimization for domain wall motion in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Tretiakov, O. A.; Liu, Y.; Abanov, Ar.
2011-04-01
The current mediated domain-wall dynamics in a thin ferromagnetic wire is investigated. We derive the effective equations of motion of the domain wall. They are used to study the possibility to optimize the power supplied by electric current for the motion of domain walls in a nanowire. We show that a certain resonant time-dependent current moving a domain wall can significantly reduce the Joule heating in the wire, and thus it can lead to a novel proposal for the most energy efficient memory devices. We discuss how Gilbert damping, nonadiabatic spin transfer torque, and the presence of Dzyaloshinskii-Moriya interaction can effect this power optimization.
Thermal spin-transfer torques on magnetic domain walls
NASA Astrophysics Data System (ADS)
Yuan, Zhe; Wang, Shuai; Xia, Ke
2010-04-01
We studied the spin-transfer torques acting on magnetic domain walls in the presence of a nonequilibrium thermal distribution using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. First-principles transport calculations have been performed in Ni and Co domain walls as typical examples. The temperature difference between two sides of the domain wall can induce remarkable spin- transfer torques, which are comparable with the current-induced torques required for the domain wall motion.
Effective pinning energy landscape perturbations for propagating magnetic domain walls
NASA Astrophysics Data System (ADS)
Burn, D. M.; Atkinson, D.
2016-10-01
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated.
Effective pinning energy landscape perturbations for propagating magnetic domain walls
Burn, D. M.; Atkinson, D.
2016-01-01
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated. PMID:27694953
Effective pinning energy landscape perturbations for propagating magnetic domain walls.
Burn, D M; Atkinson, D
2016-10-03
The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping 'quasi-static' and low damping 'dynamic' regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated.
Domain wall motion and precursor dynamics in PbZrO3
NASA Astrophysics Data System (ADS)
Puchberger, S.; Soprunyuk, V.; Majchrowski, A.; Roleder, K.; Schranz, W.
2016-12-01
Single crystals of PbZrO3 have been studied by dynamic mechanical analysis measurements in the low-frequency range f =0.02 -50 Hz. The complex Young's modulus exhibits a quite rich behavior and depends strongly on the direction of the applied dynamic force. In pseudocubic [100] c direction, we found intrinsic elastic behavior as expected from the Landau theory; at the antiferroelectric transition Tc≈510 K, a downwards cusp anomaly in Y' accompanied by a peak in Y'' points to a quadratic/linear order parameter/strain coupling in the Landau free energy. Both anomalies are increasing with decreasing frequency showing that the measurements are performed in the limit ω τth>1 . Frequency scans around Tc show energy dissipation, which could result from interphase boundary motion and/or heat diffusion. Above Tc, we observe a pronounced precursor softening, quite similar as it was found in other perovskites, which can be perfectly fitted including isotropic order parameter fluctuations. The low-frequency elastic response in [110] c direction is different. Below Tc, we find in addition to the intrinsic anomaly a strong contribution from ferroelastic domains, which leads to an additional softening in Y'. With decreasing temperatures this superelastic softening gradually disappears, due to an increasing relaxation time τDW for domain wall motion, indicating glassy behavior of domain freezing in PbZrO3. In contrast to the [100] c direction, for forces along [110] c, we found a pronounced precursor hardening, starting at about 60 K above Tc. Since this anomaly is of dynamic nature, starting at the same temperature as the observed birefringence and piezoelectric anomalies [Ko et al. Phys. Rev. B 87, 184110 (2013), 10.1103/PhysRevB.87.184110], we conclude that it originates from slow dynamic polar clusters, which freeze at T*≈550 K>Tc .
Magnetic bubblecade memory based on chiral domain walls.
Moon, Kyoung-Woong; Kim, Duck-Ho; Yoo, Sang-Cheol; Je, Soong-Geun; Chun, Byong Sun; Kim, Wondong; Min, Byoung-Chul; Hwang, Chanyong; Choe, Sug-Bong
2015-03-16
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by employing domain-wall tension induced by sophisticated structural modulation. Herein, we demonstrate a new scheme without any current injection or structural modulation. This scheme utilizes the recently discovered chiral domain walls, which exhibit asymmetry in their speed with respect to magnetic fields. Because of this asymmetry, an alternating magnetic field results in the coherent motion of the domain walls in one direction. Such coherent unidirectional motion is achieved even for an array of magnetic bubble domains, enabling the design of a new device prototype-magnetic bubblecade memory-with two-dimensional data-storage capability.
Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; ...
2016-09-16
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yieldmore » can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.« less
Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; Scrymgeour, David A.; Maria, Jon-Paul; Paisley, Elizabeth A.; Kitahara, Andrew R.
2016-09-16
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yield can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.
Supercurrent enhancement in Bloch domain walls.
Robinson, J W A; Chiodi, F; Egilmez, M; Halász, Gábor B; Blamire, M G
2012-01-01
Conventional spin-singlet Cooper pairs convert into spin-triplet pairs in ferromagnetic Josephson junctions in which the superconductor/ferromagnet interfaces (S/F) are magnetically inhomogeneous. Although much of the theoretical work describing this triplet proximity effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practice it is not easily possible to isolate a DW and propagate a supercurrent through it. The rare-earth magnet Gd can form a field-tuneable in-plane Bloch DW if grown between non-co-linearly aligned ferromagnets. Here we report supercurrents through magnetic Ni-Gd-Ni nanopillars: by field annealing at room temperature, we are able to modify the low temperature DW-state in Gd and this result has a striking effect on the junction supercurrent at 4.2 K. We argue that this result can only be explained in terms of the interconversion of triplet and singlet pairs, the efficiency of which depends on the magnetic helicity of the structure.
Supercurrent enhancement in Bloch domain walls
Robinson, J. W. A.; Chiodi, F.; Egilmez, M.; Halász, Gábor B.; Blamire, M. G.
2012-01-01
Conventional spin-singlet Cooper pairs convert into spin-triplet pairs in ferromagnetic Josephson junctions in which the superconductor/ferromagnet interfaces (S/F) are magnetically inhomogeneous. Although much of the theoretical work describing this triplet proximity effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practice it is not easily possible to isolate a DW and propagate a supercurrent through it. The rare-earth magnet Gd can form a field-tuneable in-plane Bloch DW if grown between non-co-linearly aligned ferromagnets. Here we report supercurrents through magnetic Ni-Gd-Ni nanopillars: by field annealing at room temperature, we are able to modify the low temperature DW-state in Gd and this result has a striking effect on the junction supercurrent at 4.2 K. We argue that this result can only be explained in terms of the interconversion of triplet and singlet pairs, the efficiency of which depends on the magnetic helicity of the structure. PMID:23019520
Domain wall QCD with physical quark masses
NASA Astrophysics Data System (ADS)
Blum, T.; Boyle, P. A.; Christ, N. H.; Frison, J.; Garron, N.; Hudspith, R. J.; Izubuchi, T.; Janowski, T.; Jung, C.; Jüttner, A.; Kelly, C.; Kenway, R. D.; Lehner, C.; Marinkovic, M.; Mawhinney, R. D.; McGlynn, G.; Murphy, D. J.; Ohta, S.; Portelli, A.; Sachrajda, C. T.; Soni, A.; Rbc; Ukqcd Collaborations
2016-04-01
We present results for several light hadronic quantities (fπ , fK, BK, mu d, ms, t01 /2, w0) obtained from simulations of 2 +1 flavor domain wall lattice QCD with large physical volumes and nearly physical pion masses at two lattice spacings. We perform a short, O (3 )%, extrapolation in pion mass to the physical values by combining our new data in a simultaneous chiral/continuum "global fit" with a number of other ensembles with heavier pion masses. We use the physical values of mπ, mK and mΩ to determine the two quark masses and the scale—all other quantities are outputs from our simulations. We obtain results with subpercent statistical errors and negligible chiral and finite-volume systematics for these light hadronic quantities, including fπ=130.2 (9 ) MeV ; fK=155.5 (8 ) MeV ; the average up/down quark mass and strange quark mass in the MS ¯ scheme at 3 GeV, 2.997(49) and 81.64(1.17) MeV respectively; and the neutral kaon mixing parameter, BK, in the renormalization group invariant scheme, 0.750(15) and the MS ¯ scheme at 3 GeV, 0.530(11).
Chiral damping of magnetic domain walls.
Jué, Emilie; Safeer, C K; Drouard, Marc; Lopez, Alexandre; Balint, Paul; Buda-Prejbeanu, Liliana; Boulle, Olivier; Auffret, Stephane; Schuhl, Alain; Manchon, Aurelien; Miron, Ioan Mihai; Gaudin, Gilles
2016-03-01
Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics, current-induced spin-orbit torques and some topological magnetic structures. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii-Moriya interaction (DMI) exhibit identical spatial symmetry. However, both scenarios are differentiated by their time reversal properties: whereas DMI is a conservative effect that can be modelled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing one to distinguish the physical mechanism. The chiral damping enriches the spectrum of physical phenomena engendered by the SIA, and is essential for conceiving DW and skyrmion devices owing to its coexistence with DMI (ref. ).
Mechanically driven domain wall movement in magnetoelastic nanomagnets
NASA Astrophysics Data System (ADS)
Mathurin, Théo; Giordano, Stefano; Dusch, Yannick; Tiercelin, Nicolas; Pernod, Philippe; Preobrazhensky, Vladimir
2016-07-01
Magnetic domain walls are fundamental objects arising in ferromagnetic materials, largely investigated both through micromagnetic simulations and experiments. While current- and field-based techniques for inducing domain wall propagation have been widely studied for fundamental understanding and application-oriented purposes, the possibility to manipulate domain walls using mechanical stress in magnetoelastic materials has only recently drawn interest. Here, a complete analytical model describing stress-induced transverse domain wall movement in ferromagnetic nanostripe with variable cross-section is presented. This approach yields a nonlinear integro-differential equation describing the magnetization field. Its numerical implementation, based on the nonlinear relaxation method, demonstrates the possibility to precisely control the position of a domain wall through mechanical action.
Thermal stability of a magnetic domain wall in nanowires
NASA Astrophysics Data System (ADS)
Fukami, S.; Ieda, J.; Ohno, H.
2015-06-01
We study the thermal stability of a magnetic domain wall pinned in nanowires with various widths and thicknesses made of Co/Ni multilayers and analyze the effective volume that governs the thermal stability. We find that, above a critical wire width, the domain wall depinning is initiated by a subvolume excitation and that the critical width is dependent on the wire thickness. The obtained findings are supported by the distribution of critical current density for domain wall depinning and are qualitatively described by an analytical model in which the balance between the Zeeman energy and domain wall elastic energy is considered. We also show a different behavior between the device size dependence of the thermal stability and that of critical current, leading to an enhancement of domain wall motion efficiency with decreasing the device size.
Moebius Algorithm for Domain Wall and GapDW Fermions
Ron Babich, Richard Brower, Kostas Orginos, Claudio Rebbi, David Schaich, Pavlos Vranas
2009-06-01
The M\\"obius domain wall action \\cite{Brower:2004xi} is a generalization of Shamir's action, which gives exactly the same overlap fermion lattice action as the separation ($L_s$) between the domain walls is taken to infinity. The performance advantages of the algorithm are presented for a small ensemble of quenched, full QCD domain wall and Gap domain wall lattices \\cite{Vranas:2006zk}. In particular, it is shown that at the larger lattice spacings relevant to current dynamical simulations M\\"obius fermions work well together with GapDWF reducing $L_s$ by more than a factor of two. It is noted that there is precise map between the domain wall and effective overlap action at finite quark mass including finite $L_s$ chiral violations so that the Ward-Takahashi identities for the axial and vector currents are exactly equivalent in both formulations.
Thermal effects on transverse domain wall dynamics in magnetic nanowires
Leliaert, J.; Van de Wiele, B.; Vandermeulen, J.; Coene, A.; Dupré, L.; Vansteenkiste, A.; Waeyenberge, B. Van; Laurson, L.; Durin, G.
2015-05-18
Magnetic domain walls are proposed as data carriers in future spintronic devices, whose reliability depends on a complete understanding of the domain wall motion. Applications based on an accurate positioning of domain walls are inevitably influenced by thermal fluctuations. In this letter, we present a micromagnetic study of the thermal effects on this motion. As spin-polarized currents are the most used driving mechanism for domain walls, we have included this in our analysis. Our results show that at finite temperatures, the domain wall velocity has a drift and diffusion component, which are in excellent agreement with the theoretical values obtained from a generalized 1D model. The drift and diffusion component are independent of each other in perfect nanowires, and the mean square displacement scales linearly with time and temperature.
Ferroelectric domain wall motion induced by polarized light
Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.
2015-01-01
Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918
Magnetic Domain Wall Floating on a Spin Superfluid
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Kim, Se Kwon; Tserkovnyak, Yaroslav
2017-03-01
We theoretically investigate the transfer of angular momentum between a spin superfluid and a domain wall in an exchange coupled easy-axis and easy-plane magnetic insulator system. A domain wall in the easy-axis magnet absorbs spin angular momentum via disrupting the flow of a superfluid spin current in the easy-plane magnet. Focusing on an open geometry, where the spin current is injected electrically via a nonequilibrium spin accumulation, we derive analytical expressions for the resultant superfluid-mediated motion of the domain wall. The analytical results are supported by micromagnetic simulations. The proposed phenomenon extends the regime of magnon-driven domain-wall motion to the case where the magnons are condensed and exhibit superfluidity. Furthermore, by controlling the pinning of the domain wall, we propose a realization of a reconfigurable spin transistor. The long-distance dissipationless character of spin superfluids can thus be exploited for manipulating soliton-based memory and logic devices.
Dynamics of magnetic domain walls under their own inertia.
Thomas, Luc; Moriya, Rai; Rettner, Charles; Parkin, Stuart S P
2010-12-24
The motion of magnetic domain walls induced by spin-polarized current has considerable potential for use in magnetic memory and logic devices. Key to the success of these devices is the precise positioning of individual domain walls along magnetic nanowires, using current pulses. We show that domain walls move surprisingly long distances of several micrometers and relax over several tens of nanoseconds, under their own inertia, when the current stimulus is removed. We also show that the net distance traveled by the domain wall is exactly proportional to the current pulse length because of the lag derived from its acceleration at the onset of the pulse. Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses.
Spin torque and interactions in ferromagnetic semiconductor domain walls
NASA Astrophysics Data System (ADS)
Golovatski, Elizabeth Ann
The motion of domain walls due to the spin torque generated by coherent carrier transport is of considerable interest for the development of spintronic devices. We model the charge and spin transport through domain walls in ferromagnetic semiconductors for various systems. With an appropriate model Hamiltonian for the spin-dependent potential, we calculate wavefunctions inside the domain walls which are then used to calculate transmission and reflection coefficients, which are then in turn used to calculate current and spin torque. Starting with a simple approximation for the change in magnetization inside the domain wall, and ending with a sophisticated transfer matrix method, we model the common pi wall, the less-studied 2pi wall, and a system of two pi walls separated by a variable distance. We uncover an interesting width dependence on the transport properties of the domain wall. 2pi walls in particular, have definitive maximums in resistance and spin torque for certain domain wall widths that can be seen as a function of the spin mistracking in the system---when the spins are either passing straight through the domain wall (narrow walls) or adiabatically following the magnetization (wide walls), the resistance is low as transmission is high. In the intermediate region, there is room for the spins to rotate their magnetization, but not necessarily all the way through a 360 degree rotation, leading to reflection and resistance. We also calculate that there are widths for which the total velocity of a 2pi wall is greater than that of a same-sized pi wall. In the double-wall system, we model how the system reacts to changes in the separation of the domain walls. When the domain walls are far apart, they act as a spin-selective resonant double barrier, with sharp resonance peaks in the transmission profile. Brought closer and closer together, the number and sharpness of the peaks decrease, the spectrum smooths out, and the domain walls brought together have a
Domain walls in Einstein-Gauss-Bonnet bulk
Mazharimousavi, S. Habib; Halilsoy, M.
2010-10-15
We investigate the dynamics of a n-dimensional domain wall in a n+1-dimensional Einstein-Gauss-Bonnet bulk. Exact effective potential induced by the Gauss-Bonnet (GB) term on the wall is derived. In the absence of the GB term we recover the familiar gravitational and antiharmonic oscillator potentials. Inclusion of the GB correction gives rise to a minimum radius of bounce for the Friedmann-Robertson-Walker universe expanding with a negative pressure on the domain wall.
Nanoscale probing and photonic applications of ferroelectric domain walls
NASA Astrophysics Data System (ADS)
Tian, Lili
Ferroelectrics are a versatile solid-state platform for a new generation of micro- and nanophotonic applications. Conventional integrated optics has often treated the phenomenon of ferroelectric domains and domain walls more as a nuisance rather than an asset. Ironically, domain walls can be immensely valuable in realizing a wide variety of new functionalities such as laser scanning, dynamic focusing, frequency conversion, beam shaping, waveguiding, high-speed modulation, and photonic crystal structures. All of these functions can be realized by shaping ferroelectric domain walls into arbitrary shapes on micro to nanoscale dimensions. Domain walls, however, have a mind of their own when it comes to shaping them. This thesis will focus on the fundamental domain switching characteristics under the uniform electrical fields, and local electromechanical response across the single ferroelectric domain wall in ferroelectric crystals lithium niobate, lithium tantalate and strontium barium niobate. The local electromechanical response across the single was modeled using finite element method to better understand the fundamentals of piezoelectric force microscopy in order to quantitatively interpret the measured material properties. The influence of stoichiometry on domain dynamics on macroscale and on local electromechanical properties on nanoscale was studied. The challenges in shaping ferroelectric domain are discussed and the examples of optical devices such as optical switch and optical beam deflector based on ferroelectric domain walls are presented.
Ballistic rectification of vortex domain wall chirality at nanowire corners
Omari, K.; Bradley, R. C.; Broomhall, T. J.; Hodges, M. P. P.; Hayward, T. J.; Rosamond, M. C.; Linfield, E. H.; Im, M.-Y.; Fischer, P.
2015-11-30
The interactions of vortex domain walls with corners in planar magnetic nanowires are probed using magnetic soft X-ray transmission microscopy. We show that when the domain walls are propagated into sharp corners using applied magnetic fields above a critical value, their chiralities are rectified to either clockwise or anticlockwise circulation depending on whether the corners turn left or right. Single-shot focused magneto-optic Kerr effect measurements are then used to demonstrate how, when combined with modes of domain propagation that conserve vortex chirality, this allows us to dramatically reduce the stochasticity of domain pinning at artificial defect sites. Our results provide a tool for controlling domain wall chirality and pinning behavior both in further experimental studies and in future domain wall-based memory, logic and sensor technologies.
Formation of charged ferroelectric domain walls with controlled periodicity
Bednyakov, Petr S.; Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Setter, Nava
2015-01-01
Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic circuitry. In addition, theory predicts that charged domain walls may influence the electromechanical response of ferroelectrics, with strong enhancement upon increased charged domain wall density. The existence of charged domain walls in proper ferroelectrics is disfavoured by their high formation energy and methods of their preparation in predefined patterns are unknown. Here we develop the theoretical background for the formation of charged domain walls in proper ferroelectrics using energy considerations and outline favourable conditions for their engineering. We experimentally demonstrate, in BaTiO3 single crystals the controlled build-up of high density charged domain wall patterns, down to a spacing of 7 μm with a predominant mixed electronic and ionic screening scenario, hinting to a possible exploitation of charged domain walls in agile electronics and sensing devices. PMID:26516026
Bistability of ferroelectric domain walls: Morphotropic boundary and strain effects
NASA Astrophysics Data System (ADS)
Yudin, P. V.; Tagantsev, A. K.; Setter, N.
2013-07-01
The internal structure of neutral 180∘ domain walls in perovskite-type ferroelectrics is studied in terms of Landau theory taking into account electromechanical coupling. The study is focused on the wall bistability, a factor of potential interest for information storage. A strong impact of elastic effects on the wall structure is demonstrated. It is shown that the conclusion derived earlier by Houchmandzadeh [J. Phys.: Condens. MatterJCOMEL0953-898410.1088/0953-8984/3/27/009 3, 5163 (1991)], neglecting the electrostictive coupling, that all the domain walls near the boundary between two ordered phases become bistable may not hold due to the elastic effects. Criteria for domain-wall bistability are formulated in terms of the materials thermodynamic properties and the wall orientation. The obtained general results are applied to the analysis of bistability of 180∘ domain walls in Pb(Zrc,Ti1-c)O3 near the tetragonal-rhombohedral morphotropic boundary. It is shown that, on the tetragonal side, the electrostrictive interaction suppresses the wall bistability that was predicted in terms of the theory neglecting the elastic effects. On the rhombohedral side, the domain walls are found bistable or not depending on the anisotropy of the correlation energy, the information on which is not presently available. It is also shown that, in the rhombohedral phase, the anisotropy of the correlation energy results in appearance of additional polarization component in the plane of the wall.
Dynamical evolution of domain walls in an expanding universe
NASA Technical Reports Server (NTRS)
Press, William H.; Ryden, Barbara S.; Spergel, David N.
1989-01-01
Whenever the potential of a scalar field has two or more separated, degenerate minima, domain walls form as the universe cools. The evolution of the resulting network of domain walls is calculated for the case of two potential minima in two and three dimensions, including wall annihilation, crossing, and reconnection effects. The nature of the evolution is found to be largely independent of the rate at which the universe expands. Wall annihilation and reconnection occur almost as fast as causality allows, so that the horizon volume is 'swept clean' and contains, at any time, only about one, fairly smooth, wall. Quantitative statistics are given. The total area of wall per volume decreases as the first power of time. The relative slowness of the decrease and the smoothness of the wall on the horizon scale make it impossible for walls to both generate large-scale structure and be consistent with quadrupole microwave background anisotropy limits.
Efficient Photovoltaic Current Generation at Ferroelectric Domain Walls
NASA Astrophysics Data System (ADS)
Seidel, Jan; Fu, Deyi; Yang, Seung-Yeul; Alarcón-Lladó, Esther; Wu, Junqiao; Ramesh, Ramamoorthy; Ager, Joel W., III
2011-09-01
We elucidate the mechanism of a newly observed photovoltaic effect which occurs in ferroelectrics with periodic domain structures. Under sufficiently strong illumination, domain walls function as nanoscale generators of the photovoltaic current. The steps in the electrostatic potential function to accumulate electrons and holes on opposite sides of the walls while locally reducing the concentration of the oppositely charged carriers. As a result, the recombination rate adjacent to the walls is reduced, leading to a net diffusion current. In open circuit, photovoltages for periodically ordered domain walls are additive and voltages much larger than the band gap can be generated. The internal quantum efficiency for individual domain walls can be surprisingly high, approaching 10% for above band-gap photons. Although we have found the effect in BiFeO3 films, it should occur in any system with a similar periodic potential.
Domain wall pinning in ultra-narrow electromigrated break junctions.
Reeve, Robert M; Loescher, André; Mawass, Mohamad-Assaad; Hoffmann-Vogel, Regina; Kläui, Mathias
2014-11-26
The study of magnetic domain walls in constrained geometries is an important topic, yet when dealing with extreme nanoscale magnetic systems artefacts can often dominate the measurements and obscure the effects of intrinsic magnetic origin. In this work we study the evolution of domain wall depinning in electromigrated ferromagnetic junctions which are both initially fabricated and subsequently tailored in-situ in clean ultra-high vacuum conditions. Carefully designed Ni(80)Fe(20) (Permalloy) notched half-ring structures are fabricated and investigated as a function of constriction width by tailoring the size of the contact using controlled in-situ electromigration. It is found that the domain wall pinning strength is increased on reducing the contact size in line with a reduction of the wall energy in narrower constrictions. Furthermore, the angular dependency and symmetry of the depinning field is measured to determine the full pinning potential for a domain wall in a system with a narrow constriction.
Indirect localization of a magnetic domain wall mediated by quasi walls.
Lacour, D; Montaigne, F; Rougemaille, N; Belkhou, R; Raabe, J; Hehn, M
2015-05-26
The manipulation of magnetic domain walls in thin films and nanostructures opens new opportunities for fundamental and applied research. But controlling reliably the position of a moving domain wall still remains challenging. So far, most of the studies aimed at understanding the physics of pinning and depinning processes in the magnetic layer in which the wall moves (active layer). In these studies, the role of other magnetic layers in the stack has been often ignored. Here, we report an indirect localization process of 180° domain walls that occurs in magnetic tunnel junctions, commonly used in spintronics. Combining Scanning Transmission X-Ray Microscopy and micromagnetic simulations, magnetic configurations in both layers are resolved. When nucleating a 180° domain wall in the active layer, a quasi wall is created in the reference layer, atop the wall. The wall and its quasi wall must then be moved or positioned together, as a unique object. As a mutual effect, a localized change of the magnetic properties in the reference layer induces a localized quasi wall in the active layer. The two types of quasi walls are shown to be responsible for an indirect localization process of the 180° domain wall in the active layer.
Surface effect on domain wall width in ferroelectrics
Eliseev, Eugene A.; Morozovska, Anna N.; Kalinin, Sergei V.; Li, Yulan; Shen, Jie; Glinchuk, Maya D.; Chen , L.Q.; Gopalan, Venkatraman
2009-10-15
We study the effect of the depolarization field on a domain wall structure near the surface of a ferroelectric. Since in real situation bound and screening charges form an electric double layer, the breaking of this layer by the domain wall induces stray depolarization field, which in turn changes the domain wall structure. Power law decay of the stray field results in the power law of polarization saturation near the surface, as compared to exponential saturation in the bulk. Obtained results predict that the surface broadening of ferroelectric domain walls appeared near Curie temperature as well as describe domain wall depth profile in weak ferroelectrics. We qualitatively describe extra-broad domain walls near LiNbO3 and LiTaO3 surfaces observed experimentally at room temperature, which probably originate at high temperatures but did not fully relax their width with temperature decrease allowing for lattice pinning and defect centers. Thus results have broad implication for fundamental issues such as maximal information storage density in ferroelectric data storage, domain wall pinning mechanisms at surfaces and interfaces, and nucleation dynamics.
Dzyaloshinskii-Moriya domain walls in magnetic nanotubes
NASA Astrophysics Data System (ADS)
Goussev, Arseni; Robbins, J. M.; Slastikov, Valeriy; Tretiakov, Oleg A.
2016-02-01
We present an analytic study of domain-wall statics and dynamics in ferromagnetic nanotubes with spin-orbit-induced Dzyaloshinskii-Moriya interaction (DMI). Even at the level of statics, dramatic effects arise from the interplay of space curvature and DMI: the domains become chirally twisted, leading to more compact domain walls. The dynamics of these chiral structures exhibits several interesting features. Under weak applied currents, they propagate without distortion. The dynamical response is further enriched by the application of an external magnetic field: the domain-wall velocity becomes chirality dependent and can be significantly increased by varying the DMI. These characteristics allow for enhanced control of domain-wall motion in nanotubes with DMI, increasing their potential as information carriers in future logic and storage devices.
Thermal and athermal crackling noise in ferroelastic nanostructures.
Zhao, Z; Ding, X; Sun, J; Salje, E K H
2014-04-09
The evolution of ferroelastic microstructures under external shear is determined by large-scale molecular dynamics simulations in two and three dimensions. Ferroelastic pattern formation was found to be almost identical in two and three dimensions, with only the ferroelastic transition temperature changing. The twin patterns generated by shear deformation depend strongly on temperature, with high wall densities nucleating under optimized temperature conditions. The dynamical tweed and mobile kink movement inside the twin walls is continuous and thermally activated at high temperatures, and becomes jerky and athermal at low temperatures. With decreasing temperature, the statistical distributions of dynamical tweed and kinks vary from a Vogel-Fulcher law P(E)~exp-(E/(T-TVF)) to an athermal power-law distribution P(E)~E-E. During the yield event, the nucleation of needles and kinks is always jerky, and the energy of the jerks is power-law distributed. Low-temperature yield proceeds via one large avalanche. With increasing temperature, the large avalanche is thermally broken up into a multitude of small segments. The power-law exponents reflect the changes in temperature, even in the athermal regime.
Mechanical Actuation of Magnetic Domain-Wall Motion
NASA Astrophysics Data System (ADS)
Kim, Se Kwon; Hill, Daniel; Tserkovnyak, Yaroslav
2016-12-01
We theoretically study the motion of a magnetic domain wall induced by transverse elastic waves in a one-dimensional magnetic wire, which respects both rotational and translational symmetries. By invoking the conservation of the associated total angular and linear momenta, we are able to derive the torque and the force on the domain wall exerted by the waves. We then show how ferromagnetic and antiferromagnetic domain walls can be driven by circularly and linearly polarized waves, respectively. We envision that elastic waves may provide effective means to drive the dynamics of magnetic solitons in insulators.
Domain wall motion in synthetic Co2Si nanowires.
Liu, Gang; Lin, Yung-Chen; Liao, Lei; Liu, Lixin; Chen, Yu; Liu, Yuan; Weiss, Nathan O; Zhou, Hailong; Huang, Yu; Duan, Xiangfeng
2012-04-11
We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.
Microwave conductance of ferroelectric domain walls in lead titanate
NASA Astrophysics Data System (ADS)
Tselev, Alexander; Cao, Ye; Yu, Pu; Kalinin, Sergei V.; Maksymovych, Petro
Numerous theoretical works predicted electronically conducting domain walls in otherwise insulating ferroelectric crystals. A number of recent experiments reported conducting walls, although conductivity itself and a conclusive proof of conductance mechanism remain elusive, largely due to the electrical contact problem. The latter can be overcome using high-frequency AC voltage. Here we will present our successful measurements of microwave conductance at 180o domain walls in lead titanate using microwave microscopy. AC conducting domain walls can be repeatably reconfigured and have extraordinary stability in time and temperature. AC conductivity is detected even when DC is not. Quantitative modeling reveals that the conductance of domain walls is comparable to doped silicon. We will also present a new and robust mechanism to create charged domain walls in any ferroelectric lattice. Overall, this sets the stage for a new generation of local experiments on conducting domain walls, and furthers the prospects of their application in fast electronic devices. AT, YC, SVK, PM supported by Division of Materials Sciences and Engineering, Office of Science, Basic Energy Sciences, U. S. DOE. PY supported by the National Basic Research Program of China (2015CB921700).
Ferroelectricity of domain walls in rare earth iron garnet films
NASA Astrophysics Data System (ADS)
Popov, A. I.; Zvezdin, K. A.; Gareeva, Z. V.; Mazhitova, F. A.; Vakhitov, R. M.; Yumaguzin, A. R.; Zvezdin, A. K.
2016-11-01
In this paper, we report on electric polarization arising in a vicinity of Bloch-like domain walls in rare-earth iron garnet films. The domain walls generate an intrinsic magnetic field that breaks an antiferroelectric structure formed in the garnets due to an exchange interaction between rare earth and iron sublattices. We explore 180° domain walls whose formation is energetically preferable in the films with perpendicular magnetic anisotropy. Magnetic and electric structures of the 180° quasi-Bloch domain walls have been simulated at various relations between system parameters. Singlet, doublet ground states of rare earth ions and strongly anisotropic rare earth Ising ions have been considered. Our results show that electric polarization appears in rare earth garnet films at Bloch domain walls, and the maximum of magnetic inhomogeneity is not always linked to the maximum of electric polarization. A number of factors including the temperature, the state of the rare earth ion and the type of a wall influence magnetically induced electric polarization. We show that the value of polarization can be enhanced by the shrinking of the Bloch domain wall width, decreasing the temperature, and increasing the deviations of magnetization from the Bloch rotation that are regulated by impacts given by magnetic anisotropies of the films.
Ferroelectricity of domain walls in rare earth iron garnet films.
Popov, A I; Zvezdin, K A; Gareeva, Z V; Mazhitova, F A; Vakhitov, R M; Yumaguzin, A R; Zvezdin, A K
2016-11-16
In this paper, we report on electric polarization arising in a vicinity of Bloch-like domain walls in rare-earth iron garnet films. The domain walls generate an intrinsic magnetic field that breaks an antiferroelectric structure formed in the garnets due to an exchange interaction between rare earth and iron sublattices. We explore 180° domain walls whose formation is energetically preferable in the films with perpendicular magnetic anisotropy. Magnetic and electric structures of the 180° quasi-Bloch domain walls have been simulated at various relations between system parameters. Singlet, doublet ground states of rare earth ions and strongly anisotropic rare earth Ising ions have been considered. Our results show that electric polarization appears in rare earth garnet films at Bloch domain walls, and the maximum of magnetic inhomogeneity is not always linked to the maximum of electric polarization. A number of factors including the temperature, the state of the rare earth ion and the type of a wall influence magnetically induced electric polarization. We show that the value of polarization can be enhanced by the shrinking of the Bloch domain wall width, decreasing the temperature, and increasing the deviations of magnetization from the Bloch rotation that are regulated by impacts given by magnetic anisotropies of the films.
Microscopic and macroscopic signatures of antiferromagnetic domain walls.
Jaramillo, R; Rosenbaum, T F; Isaacs, E D; Shpyrko, O G; Evans, P G; Aeppli, G; Cai, Z
2007-03-16
Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order 5 x 10(-5) mu Omega cm(2) at a temperature of 100 K.
Scalar triplet on a domain wall: an exact solution
NASA Astrophysics Data System (ADS)
Gani, Vakhid A.; Lizunova, Mariya A.; Radomskiy, Roman V.
2016-04-01
We study a model with a real scalar Higgs field and a scalar triplet field that allows existence of a topological defect — a domain wall. The wall breaks the global O(3) symmetry of the model, which gives rise to non-Abelian orientational degrees of freedom. We found an exact analytic solution that describes a domain wall with a localized configuration of the triplet field on it. This solution enables one to calculate contributions to the action from the orientational and translational degrees of freedom of the triplet field. We also study the linear stability of the domain wall with the triplet field switched off. We obtain that degrees of freedom localized on the wall can appear or do not appear depending on the parameters of the model.
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
NASA Astrophysics Data System (ADS)
Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.
2016-04-01
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.
2016-01-01
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108
Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.
Zhang, S F; Gan, W L; Kwon, J; Luo, F L; Lim, G J; Wang, J B; Lew, W S
2016-04-21
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
Domain wall formation in late-time phase transitions
NASA Technical Reports Server (NTRS)
Kolb, Edward W.; Wang, Yun
1992-01-01
We examine domain wall formulation in late time phase transitions. We find that in the invisible axion domain wall phenomenon, thermal effects alone are insufficient to drive different parts of the disconnected vacuum manifold. This suggests that domain walls do not form unless either there is some supplemental (but perhaps not unreasonable) dynamics to localize the scalar field responsible for the phase transition to the low temperature maximum (to an extraordinary precision) before the onset of the phase transition, or there is some non-thermal mechanism to produce large fluctuations in the scalar field. The fact that domain wall production is not a robust prediction of late time transitions may suggest future directions in model building.
Chirality-Dependent Transmission of Spin Waves through Domain Walls
NASA Astrophysics Data System (ADS)
Buijnsters, F. J.; Ferreiros, Y.; Fasolino, A.; Katsnelson, M. I.
2016-04-01
Spin-wave technology (magnonics) has the potential to further reduce the size and energy consumption of information-processing devices. In the submicrometer regime (exchange spin waves), topological defects such as domain walls may constitute active elements to manipulate spin waves and perform logic operations. We predict that spin waves that pass through a domain wall in an ultrathin perpendicular-anisotropy film experience a phase shift that depends on the orientation of the domain wall (chirality). The effect, which is absent in bulk materials, originates from the interfacial Dzyaloshinskii-Moriya interaction and can be interpreted as a geometric phase. We demonstrate analytically and by means of micromagnetic simulations that the phase shift is strong enough to switch between constructive and destructive interference. The two chirality states of the domain wall may serve as a memory bit or spin-wave switch in magnonic devices.
Magnetic domain wall conduits for single cell applications.
Donolato, M; Torti, A; Kostesha, N; Deryabina, M; Sogne, E; Vavassori, P; Hansen, M F; Bertacco, R
2011-09-07
The ability to trap, manipulate and release single cells on a surface is important both for fundamental studies of cellular processes and for the development of novel lab-on-chip miniaturized tools for biological and medical applications. In this paper we demonstrate how magnetic domain walls generated in micro- and nano-structures fabricated on a chip surface can be used to handle single yeast cells labeled with magnetic beads. In detail, first we show that the proposed approach maintains the microorganism viable, as proven by monitoring the division of labeled yeast cells trapped by domain walls over 16 hours. Moreover, we demonstrate the controlled transport and release of individual yeast cells via displacement and annihilation of individual domain walls in micro- and nano-sized magnetic structures. These results pave the way to the implementation of magnetic devices based on domain walls technology in lab-on-chip systems devoted to accurate individual cell trapping and manipulation.
Thermal variations of domain wall thickness and number of domains in magnetic rectangular grains
NASA Astrophysics Data System (ADS)
Xu, Song; Merrill, Ronald T.
1990-12-01
Equilibrium domain wall thickness and number of domains in rectangular magnetic grains are determined by using a modified Amar model. It is shown that domain structure, particularly domain wall thickness, in a magnetized grain depends strongly on grain shape and orientation. These dependencies are attributed to the existence of two competing self-magnetostatic interactions, one from the ends of the grain and the other from the sides. One of the consequences of this is that the thermal variation of domain wall thickness in an elongated grain is greater (smaller) than predicted by classical theory when the grain is magnetized along the shortest (longest) dimension. For magnetite, classical theory provides a good approximation in predicting both domain wall thickness and number of domains in equal-dimensional grains larger than about 4 μm.
Enhanced controllability of domain-wall pinning by asymmetric control of domain-wall injection.
Ahn, Sung-Min; Moon, Kyoung-Woong
2013-03-15
We investigate a control scheme for enhancing the controllability of domain-wall (DW) pinning on ferromagnetic devices using an interaction between magnetic charges distributed on a nanobar and at a notch, respectively. The scheme is realized at an artificial notch with a nanobar vertical to it on Permalloy nanowires with an asymmetrical pad. Injection fields for injecting the DWs from the asymmetrical pad to the nanowire show an asymmetrical dependence on the saturation angle for initializing the magnetization of the nanowire, and the injected DWs are pinned by the notch with the nanobar vertical to it. We have found that the landscape of the pinning potential energy experienced by the DWs depends on the magnetized direction of the nanobar and that its level is shifted by the injection field, leading to an increase or decrease in the depinning field with respect to the saturation angle. This is consistent with our estimation based on micromagnetic simulation.
Tailoring the chirality of magnetic domain walls by interface engineering.
Chen, Gong; Ma, Tianping; N'Diaye, Alpha T; Kwon, Heeyoung; Won, Changyeon; Wu, Yizheng; Schmid, Andreas K
2013-01-01
Contacting ferromagnetic films with normal metals changes how magnetic textures respond to electric currents, enabling surprisingly fast domain wall motions and spin texture-dependent propagation direction. These effects are attributed to domain wall chirality induced by the Dzyaloshinskii-Moriya interaction at interfaces, which suggests rich possibilities to influence domain wall dynamics if the Dzyaloshinskii-Moriya interaction can be adjusted. Chiral magnetism was seen in several film structures on appropriately chosen substrates where interfacial spin-orbit-coupling effects are strong. Here we use real-space imaging to visualize chiral domain walls in cobalt/nickel multilayers in contact with platinum and iridium. We show that the Dzyaloshinskii-Moriya interaction can be adjusted to stabilize either left-handed or right-handed Néel walls, or non-chiral Bloch walls by adjusting an interfacial spacer layer between the multilayers and the substrate. Our findings introduce domain wall chirality as a new degree of freedom, which may open up new opportunities for spintronics device designs.
Direct observation of closure domain wall mediated spin waves
Mozooni, Babak McCord, Jeffrey
2015-07-27
The generation and guiding of spin waves from and by magnetic domain walls are demonstrated. The spin waves radiate from pinned and oscillating magnetic closure domain walls and propagate linearly along a narrow path formed by the surrounding 180° asymmetric Bloch domain walls. The propagating spin wave modes are directly visualized by time-resolved magneto-optical Kerr microscopy with picosecond temporal resolution. A linear relationship between excitation frequency, wavelength, and number of spin waves per domain exists. Independent of the field excitation frequency, a constant phase velocity of spin waves propagation is obtained. Spin waves characteristics can be tuned by varying the magnetic domain dynamics, allowing for variable spin wave characteristics with magnetic field characteristics and histories.
a Numerical Investigation of Magnetic Domain Wall Motion
NASA Astrophysics Data System (ADS)
Patterson, George Nicholas
1993-01-01
Numerical simulation has given new insight into magnetization dynamics in thin films. This thesis reports on a numerical investigation of magnetic domain wall motion in thin iron garnet films. The magnetization is modeled as a continuum field with constant magnitude, subject to exchange, anisotropy, magnetic interactions, and an external drive field. The features of these systems are domains, walls, and lines. A co-moving formulation of the Landau -Lifshitz-Gilbert equation was developed and implemented on the Connection Machine 2. This approach allowed the investigation of large systems for useful length and time scales. This investigation confirms several mechanisms of domain wall motion and reports on one which is new. At low drive fields, the domain wall moves with a constant velocity and time-invariant profile. Beyond a critical field, a single horizontal Bloch line (HBL) is formed and moves through the wall. The HBL reduces the wall mobility and the average wall velocity varies quadratically with the applied field. At larger fields, HBLs are formed in the center of the wall by a local breakdown mechanism, nucleating a pair of HBLs. The HBLs propagate to the surface of the material where they unwind, and the process repeats. The domain wall velocity is a weak function of the external field in this region. The motion of a domain wall in a stripe array is also described and compared with experiment. Simulation results corroborate the features of overshoot and wall oscillation observed in experimental data, and indicate that they are due to the presence of an HBL in the wall. Comparison of the overall time scale indicates that the gyromagnetic ratio is incorrect for this material. This investigation also reports on the statics and dynamics of vertical Bloch line (VBL) pairs. The structure of a domain wall containing two pi VBLs, and a single 2pi VBL has been determined. The VBLs inhibit the formation of HBLs and significantly reduce wall mobility. The 2pi VBL
Dynamics of magnetic domain wall motion after nucleation: dependence on the wall energy.
Fukumoto, K; Kuch, W; Vogel, J; Romanens, F; Pizzini, S; Camarero, J; Bonfim, M; Kirschner, J
2006-03-10
The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.
Characteristic microwave background distortions from collapsing domain wall bubbles
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1990-01-01
The magnitude and angular pattern of distortions of the microwave background are analyzed by collapsing spherical domain walls. A characteristic pattern of redshift distortions of red or blue spikes surrounded by blue discs was found. The width and height of a spike is related to the diameter and magnitude of the disc. A measurement of the relations between these quantities thus can serve as an unambiguous indicator for a collapsing spherical domain wall. From the redshift distortion in the blue discs an upper bound was found on the surface energy density of the walls sigma is less than or approximately 8 MeV cubed.
Spin Hall torque magnetometry of Dzyaloshinskii domain walls
NASA Astrophysics Data System (ADS)
Emori, Satoru; Martinez, Eduardo; Lee, Kyung-Jin; Lee, Hyun-Woo; Bauer, Uwe; Ahn, Sung-Min; Agrawal, Parnika; Bono, David C.; Beach, Geoffrey S. D.
2014-11-01
Current-induced domain wall motion in the presence of the Dzyaloshinskii-Moriya interaction (DMI) is experimentally and theoretically investigated in heavy-metal/ferromagnet bilayers. The angular dependence of the current-induced torque and the magnetization structure of Dzyaloshinskii domain walls are described and quantified simultaneously in the presence of in-plane fields. We show that the DMI strength depends strongly on the heavy metal, varying by a factor of 20 between Ta and Pa, and that strong DMI leads to wall distortions not seen in conventional materials. These findings provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.
Spin waves and domain wall modes in curved magnetic nanowires.
Bocklage, Lars; Motl-Ziegler, Sandra; Topp, Jesco; Matsuyama, Toru; Meier, Guido
2014-07-02
The confinement of spin waves in inhomogeneous fields and spin wave interaction with domain walls has attracted interest due to possible applications in magnonics. We investigate spin waves in curved ferromagnetic nanowires. The field dispersion and localization of spin waves is revealed by comparison to known modes in stripes and taking into account the specific field reversal of the curved wire. In small wires we find a strongly altered mode spectrum in a certain field regime. Micromagnetic simulations show an extended domain wall within the wire in this field region. The domain wall shows several dynamic modes and changes the remaining spin wave modes. We find mode suppression as well as newly arising modes due to the strong inhomogenous internal field of the wall.
Magnetoelastic contribution in domain wall propagation of micrometric wires.
Zhukov, A; Blanco, J M; Ipatov, M; Zhukova, V
2012-09-01
We report on studies of domain wall propagation of magnetically-bistable Fe-Co-rich microwires paying attention on the effect of applied and internal stresses. We measured magnetic domain propagation in various magnetic Fe-Co-rich amorphous microwires with metallic nucleus diameters (from 2.8 microm to 18 microm) using Sixtus Tonks-like experiments. We found that application of applied stresses and increasing of internal stresses result in decreasing of domain wall (DW) velocity. We assume that in order to achieve higher DW propagation velocity at the same magnetic field and enhanced DW mobility, special attention should be paid to the decrease of magnetoelastic energy.
Manipulation of vortices by magnetic domain walls
NASA Astrophysics Data System (ADS)
Goa, P. E.; Hauglin, H.; Olsen, A.˚. A. F.; Shantsev, D.; Johansen, T. H.
2003-01-01
In a type-II superconductor, the magnetic field penetrates in the form of thin filaments called vortices. The controlled behavior of these vortices may provide the basis for a new generation of nanodevices. We present here a series of experiments showing simultaneous manipulation and imaging of individual vortices in a NbSe2 single crystal. The magnetic field from a Bloch wall in a ferrite garnet film (FGF) is used to manipulate the vortices. High-resolution magneto-optical imaging enables real-time observation of the vortex positions using the Faraday effect in the same FGF. Depending on the thickness of the sample, the vortices are either swept away or merely bent with the Bloch wall.
Observations of ferroelastic switching by Raman spectroscopy in 18-percent ceria-stabilized zirconia
NASA Astrophysics Data System (ADS)
Bolon, Amy; Munoz Saldana, Juan; Gentleman, Molly
2011-03-01
Ferroelastic switching has been shown to be responsible for significant increases in the toughness of tetragonal zirconia ceramics. Observations of switching and measurements of coercive stress have generally been limited to TEM studies on large single crystals. In this study we show that it is possible to observe ferroelastic switching in 18 mole-percent ceria stabilized zirconia using polarized confocal Raman spectroscopy. Observations were made on bulk polycrystalline samples indented with a standard Vicker's indent and exhibited reorientation of crystal domains along the crack as well as near the crack tip. Coercive stress measurements were made by loading the samples uniaxially while making measurements of domain orientation.
Complex oxide ferroelectrics: Electrostatic doping by domain walls
Maksymovych, Petro
2015-06-19
Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacementsmore » changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.« less
Voltage-controlled domain wall traps in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Bauer, Uwe; Emori, Satoru; Beach, Geoffrey S. D.
2013-06-01
Electrical control of magnetism has the potential to bring about revolutionary new spintronic devices, many of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires. Recently, it has been shown that voltage-induced charge accumulation at a metal-oxide interface can influence domain wall motion in ultrathin metallic ferromagnets, but the effects have been relatively modest and limited to the slow, thermally activated regime. Here we show that a voltage can generate non-volatile switching of magnetic properties at the nanoscale by modulating interfacial chemistry rather than charge density. Using a solid-state ionic conductor as a gate dielectric, we generate unprecedentedly strong voltage-controlled domain wall traps that function as non-volatile, electrically programmable and switchable pinning sites. Pinning strengths of at least 650 Oe can be readily achieved, enough to bring to a standstill domain walls travelling at speeds of at least ~20 m s-1. We exploit this new magneto-ionic effect to demonstrate a prototype non-volatile memory device in which voltage-controlled domain wall traps facilitate electrical bit selection in a magnetic nanowire register.
Domain conservation in several volvocalean cell wall proteins.
Woessner, J P; Molendijk, A J; van Egmond, P; Klis, F M; Goodenough, U W; Haring, M A
1994-11-01
Based on our previous work demonstrating that (SerPro)x epitopes are common to extensin-like cell wall proteins in Chlamydomonas' reinhardtii, we looked for similar proteins in the distantly related species C. eugametos. Using a polyclonal antiserum against a (SerPro)10 oligopeptide, we found distinct sets of stage-specific polypeptides immunoprecipitated from in vitro translations of C. eugametos RNA. Screening of a C. eugametos cDNA expression library with the antiserum led to the isolation of a cDNA (WP6) encoding a (SerPro)x-rich multidomain wall protein. Analysis of a similarly selected cDNA (VSP-3) from a C. reinhardtii cDNA expression library revealed that it also coded for a (SerPro)x-rich multidomain wall protein. The C-terminal rod domains of VSP-3 and WP6 are highly homologous, while the N-terminal domains are dissimilar; however, the N-terminal domain of VSP-3 is homologous to the globular domain of a cell wall protein from Volvox carteri. Exon shuffling might be responsible for this example of domain conservation over 350 million years of volvocalean cell wall protein evolution.
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Belashchenko, K. D.; Tchernyshyov, O.; Kovalev, Alexey A.; ...
2016-03-30
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying amore » small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.« less
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Belashchenko, K. D.; Tchernyshyov, O.; Kovalev, Alexey A.; Tretiakov, O. A.
2016-03-30
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr_{2}O_{3} is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr_{2}O_{3}, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr_{2}O_{3}. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
Voltage-controlled domain wall traps in ferromagnetic nanowires.
Bauer, Uwe; Emori, Satoru; Beach, Geoffrey S D
2013-06-01
Electrical control of magnetism has the potential to bring about revolutionary new spintronic devices, many of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires. Recently, it has been shown that voltage-induced charge accumulation at a metal-oxide interface can influence domain wall motion in ultrathin metallic ferromagnets, but the effects have been relatively modest and limited to the slow, thermally activated regime. Here we show that a voltage can generate non-volatile switching of magnetic properties at the nanoscale by modulating interfacial chemistry rather than charge density. Using a solid-state ionic conductor as a gate dielectric, we generate unprecedentedly strong voltage-controlled domain wall traps that function as non-volatile, electrically programmable and switchable pinning sites. Pinning strengths of at least 650 Oe can be readily achieved, enough to bring to a standstill domain walls travelling at speeds of at least ~20 m s(-1). We exploit this new magneto-ionic effect to demonstrate a prototype non-volatile memory device in which voltage-controlled domain wall traps facilitate electrical bit selection in a magnetic nanowire register.
Domain walls and ferroelectric reversal in corundum derivatives
NASA Astrophysics Data System (ADS)
Ye, Meng; Vanderbilt, David
2017-01-01
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.
Localization of vector field on dynamical domain wall
NASA Astrophysics Data System (ADS)
Higuchi, Masafumi; Nojiri, Shin'ichi
2017-03-01
In the previous works (arxiv:arXiv:1202.5375 and arxiv:arXiv:1402.1346), the dynamical domain wall, where the four dimensional FRW universe is embedded in the five dimensional space-time, has been realized by using two scalar fields. In this paper, we consider the localization of vector field in three formulations. The first formulation was investigated in the previous paper (arxiv:arXiv:1510.01099) for the U (1) gauge field. In the second formulation, we investigate the Dvali-Shifman mechanism (arxiv:arXiv:hep-th/9612128), where the non-abelian gauge field is confined in the bulk but the gauge symmetry is spontaneously broken on the domain wall. In the third formulation, we investigate the Kaluza-Klein modes coming from the five dimensional graviton. In the Randall-Sundrum model, the graviton was localized on the brane. We show that the (5 , μ) components (μ = 0 , 1 , 2 , 3) of the graviton are also localized on the domain wall and can be regarded as the vector field on the domain wall. There are, however, some corrections coming from the bulk extra dimension if the domain wall universe is expanding.
Geometrical control of pure spin current induced domain wall depinning
NASA Astrophysics Data System (ADS)
Pfeiffer, A.; Reeve, R. M.; Voto, M.; Savero-Torres, W.; Richter, N.; Vila, L.; Attané, J. P.; Lopez-Diaz, L.; Kläui, Mathias
2017-03-01
We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of 6\\centerdot {{10}11} A m-2, which is attributed to the optimal control of the position of the domain wall.
Local Domain-Wall Velocity Engineering via Tailored Potential Landscapes in Ferromagnetic Rings
NASA Astrophysics Data System (ADS)
Richter, Kornel; Krone, Andrea; Mawass, Mohamad-Assaad; Krüger, Benjamin; Weigand, Markus; Stoll, Hermann; Schütz, Gisela; Kläui, Mathias
2016-02-01
We report the local control of the domain-wall velocity by tailoring the domain-wall potential landscape via local variations of a curved ring geometry. Employing time-resolved scanning-transmission x-ray microscopy, we dynamically image the motion of domain walls in rotating magnetic fields and quantify the contribution of the spatially varying potential to the domain-wall dynamics. We explain our experimentally obtained angular dependences of domain-wall velocities by the interplay between long-range forces arising from the Zeeman interaction of domain walls with the external magnetic field with local forces arising from variations of domain-wall energy due to a varying ring width. The interplay of these forces leads to distortion-free wall motion, and we use the engineered domain-wall potential landscape for spatial synchronization of domain-wall velocities in ferromagnetic rings, which are both a key prerequisite for the implementation of domain-wall-based devices.
Current-driven periodic domain wall creation in ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Sitte, Matthias; Everschor-Sitte, Karin; Valet, Thierry; Rodrigues, Davi R.; Sinova, Jairo; Abanov, Ar.
2016-08-01
We predict the electrical generation and injection of domain walls into a ferromagnetic nanowire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current jc domain walls are injected into the nanowire with a period T ˜(j-jc) -1 /2 . Importantly, domain walls can be produced periodically even in a simple exchange ferromagnet with uniaxial anisotropy, without requiring any standard "twisting" interaction such as Dzyaloshinskii-Moriya or dipole-dipole interactions. We show analytically that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian. Finally we give a specific proposal for an experimental realization.
Domain walls and gravitational waves in the Standard Model
NASA Astrophysics Data System (ADS)
Krajewski, Tomasz; Lalak, Zygmunt; Lewicki, Marek; Olszewski, Paweł
2016-12-01
We study domain walls which can be created in the Standard Model under the assumption that it is valid up to very high energy scales. We focus on domain walls interpolating between the physical electroweak vacuum and the global minimum appearing at very high field strengths. The creation of the network which ends up in the electroweak vacuum percolating through the Universe is not as difficult to obtain as one may expect, although it requires certain tuning of initial conditions. Our numerical simulations confirm that such domain walls would swiftly decay and thus cannot dominate the Universe. We discuss the possibility of detection of gravitational waves produced in this scenario. We have found that for the standard cosmology the energy density of these gravitational waves is too small to be observed in present and planned detectors.
Domain Wall Motion in Synthetic Co2Si Nanowires
Liu, Gang; Lin, Yung-Chen; Liao, Lei; Liu, Lixin; Chen, Yu; Liu, Yuan; Weiss, Nathan O.; Zhou, Hailong; Huang, Yu; Duan, Xiangfeng
2012-01-01
We report the synthesis of single crystalline Co2Si nanowires, and electrical transport studies of single Co2Si nanowire devices at low temperature. The butterfly-shaped magnetoresistance shows interesting ferromagnetic features including negative magnetoresistance, hysteretic switch fields and step-wise drops in magnetoresistance. The non-smooth step-wise magnetoresistance response is attributed to magnetic domain wall pinning and de-pinning motion in the Co2Si nanowires probably at crystal defects or morphology defects. The temperature dependence of the domain wall de-pinning field is observed and is described by a model based on thermally assisted domain wall de-pinning over a single energy barrier. PMID:22469009
Magnetic domain walls as reconfigurable spin-wave nanochannels
NASA Astrophysics Data System (ADS)
Wagner, K.; Kákay, A.; Schultheiss, K.; Henschke, A.; Sebastian, T.; Schultheiss, H.
2016-05-01
In the research field of magnonics, it is envisaged that spin waves will be used as information carriers, promoting operation based on their wave properties. However, the field still faces major challenges. To become fully competitive, novel schemes for energy-efficient control of spin-wave propagation in two dimensions have to be realized on much smaller length scales than used before. In this Letter, we address these challenges with the experimental realization of a novel approach to guide spin waves in reconfigurable, nano-sized magnonic waveguides. For this purpose, we make use of two inherent characteristics of magnetism: the non-volatility of magnetic remanence states and the nanometre dimensions of domain walls formed within these magnetic configurations. We present the experimental observation and micromagnetic simulations of spin-wave propagation inside nano-sized domain walls and realize a first step towards a reconfigurable domain-wall-based magnonic nanocircuitry.
Magnetic domain walls as reconfigurable spin-wave nanochannels.
Wagner, K; Kákay, A; Schultheiss, K; Henschke, A; Sebastian, T; Schultheiss, H
2016-05-01
In the research field of magnonics, it is envisaged that spin waves will be used as information carriers, promoting operation based on their wave properties. However, the field still faces major challenges. To become fully competitive, novel schemes for energy-efficient control of spin-wave propagation in two dimensions have to be realized on much smaller length scales than used before. In this Letter, we address these challenges with the experimental realization of a novel approach to guide spin waves in reconfigurable, nano-sized magnonic waveguides. For this purpose, we make use of two inherent characteristics of magnetism: the non-volatility of magnetic remanence states and the nanometre dimensions of domain walls formed within these magnetic configurations. We present the experimental observation and micromagnetic simulations of spin-wave propagation inside nano-sized domain walls and realize a first step towards a reconfigurable domain-wall-based magnonic nanocircuitry.
Switchable spin-current source controlled by magnetic domain walls.
Savero Torres, W; Laczkowski, P; Nguyen, V D; Rojas Sanchez, J C; Vila, L; Marty, A; Jamet, M; Attané, J P
2014-07-09
Using nonlocal spin injection, spin-orbit coupling, or spincaloritronic effects, the manipulation of pure spin currents in nanostructures underlies the development of new spintronic devices. Here, we demonstrate the possibility to create switchable pure spin current sources, controlled by magnetic domain walls. When the domain wall is located at a given point of the magnetic circuit, a pure spin current is injected into a nonmagnetic wire. Using the reciprocal measurement configuration, we demonstrate that the proposed device can also be used as a pure spin current detector. Thanks to its simple geometry, this device can be easily implemented in spintronics applications; in particular, a single current source can be used both to induce the domain wall motion and to generate the spin signal.
Epitaxial Engineering of Domain Walls and Distortions in Ferrite Heterostructures
NASA Astrophysics Data System (ADS)
Mundy, Julia
The defining feature of ferroics is the ability of an external stimulus--electric field, magnetic field, or stress--to move domain walls. These topological defects and their motion enables many useful attributes, e.g., memories that can be reversibly written between stable states as well as enhanced conductivity, permittivity, permeability, and piezoelectricity. Although methods are known to drastically increase their density, the placement of domain walls with atomic precision has until now evaded control. Here we engineer the location of domain walls with monolayer precision and exploit this ability to create a novel multiferroic in which ferroelectricity enhances magnetism at all relevant length scales. Starting with hexagonal LuFeO3, a geometric ferroelectric with the greatest known planar rumpling, we introduce individual extra monolayers of FeO during growth to construct formula-unit-thick syntactic layers of ferrimagnetic LuFe2O4 within the LuFeO3 matrix, i.e., (LuFeO3)m /(LuFe2O4)1 superlattices. The severe rumpling imposed by the neighboring LuFeO3 drives the ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state and reduces the LuFe2O4 spin frustration. This increases the magnetic transition temperature significantly--to 281 K for the (LuFeO3)9 /(LuFe2O4)1 superlattice. Moreover, LuFeO3 can form charged ferroelectric domain walls, which we align to the LuFe2O4 bilayers with monolayer precision. Charge transfers to these domain walls to alleviate the otherwise electrostatically unstable polarization arrangement, further boosting the magnetic moment. Our results demonstrate the utility of combining ferroics at the atomic-layer level with attention to domain walls, geometric frustration and polarization doping to create multiferroics by design.
Thick domain walls in AdS black hole spacetimes
Moderski, Rafal; Rogatko, Marek
2006-08-15
Equations of motion for a real self-gravitating scalar field in the background of a black hole with negative cosmological constant were solved numerically. We obtain a sequence of static axisymmetric solutions representing thick domain wall cosmological black hole systems, depending on the mass of black hole, cosmological parameter and the parameter binding black hole mass with the width of the domain wall. For the case of extremal cosmological black hole the expulsion of scalar field from the black hole strongly depends on it.
Electric polarization of magnetic domain walls in magnetoelectrics.
Lobzenko, I P; Goncharov, P P; Ter-Oganessian, N V
2015-06-24
Two prominent magnetoelectrics MnWO4 and CuO possess low-temperature commensurate paraelectric magnetically ordered phase. Here using Monte Carlo simulations we show that the walls between the domains of this phase are ferroelectric with the same electric polarization direction and value as those in the magnetoelectric phases of these compounds. We also suggest that experimental observation of electric polarization of domain walls in MnWO4 should help to determine the macroscopic interactions responsible for its magnetoelectric properties.
Charged domain walls under super-band-gap illumination
NASA Astrophysics Data System (ADS)
Sturman, B.; Podivilov, E.
2017-03-01
Charged domain walls (CDWs), which possess metallic-type conductivity and can be created and controlled in the bulk of wide-band-gap ferroelectrics, attract nowadays a strong research interest. The most advanced method for production of stable CDWs involves weak super-band-gap illumination. Here, we investigate theoretically the impact of this illumination on the major wall properties including the energy and the spatial profiles of the polarization, of the electrostatic potential, and of the compensating charge carriers. The key material parameters determining the effect of light are the zero-field polarization strength, the dielectric permittivity, and the trap concentration. The main predictions are substantial reduction of the wall energies and decrease of the electric wall potential under light. These features facilitate creation of dense CDWs patterns and accessibility of the metallic-type wall conductivity.
Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate
Nataf, G. F.; Grysan, P.; Guennou, M.; Kreisel, J.; Martinotti, D.; Rountree, C. L.; Mathieu, C.; Barrett, N.
2016-01-01
The understanding of domain structures, specifically domain walls, currently attracts a significant attention in the field of (multi)-ferroic materials. In this article, we analyze contrast formation in full field electron microscopy applied to domains and domain walls in the uniaxial ferroelectric lithium niobate, which presents a large 3.8 eV band gap and for which conductive domain walls have been reported. We show that the transition from Mirror Electron Microscopy (MEM – electrons reflected) to Low Energy Electron Microscopy (LEEM – electrons backscattered) gives rise to a robust contrast between domains with upwards (Pup) and downwards (Pdown) polarization, and provides a measure of the difference in surface potential between the domains. We demonstrate that out-of-focus conditions of imaging produce contrast inversion, due to image distortion induced by charged surfaces, and also carry information on the polarization direction in the domains. Finally, we show that the intensity profile at domain walls provides experimental evidence for a local stray, lateral electric field. PMID:27608605
NASA Astrophysics Data System (ADS)
Shevchenko, Andriy; Barabash, Maksym
2016-10-01
It was established that at low temperatures, quantum oscillations of a pair of interacting nanoscale structural inhomogeneities (vertical Bloch lines) occur in a domain wall of stripe domain in uniaxial ferromagnetic film. The effective mass of vertical Bloch line and conditions for this effect were determined. The effect can be used in the hybrid storage devices bit + q-bit.
Matter antimatter domains: A possible solution to the CP domain wall problem in the early universe
NASA Technical Reports Server (NTRS)
Mohanty, A. K.; Stecker, F. W.
1984-01-01
An SU(5) grand unified theory model is used to show how the degeneracy between vacua with different spontaneously broken charge parity can be dynamically lifted by a condensate of heavy fermion pairs. This drives a phase transition to a unique vacuum state with definite charge parity. The transition eliminates the domain walls in a matter antimatter symmetric domain cosmology.
Textural domain walls in superfluid 3He-B
NASA Astrophysics Data System (ADS)
Mizushima, Takeshi
Owing to the richness of symmetry, the superfluid 3He serves as a rich repository of topological quantum phenomena. This includes the emergence of surface Majorana fermions and their quantum mass acquisition at the topological critical point. Furthermore, the marriage of the prototype topological superfluid with nanofabrication techniques brings about a rich variety of spontaneous symmetry breaking, such as the formation of the stripe order and nontrivial domain walls. In this work, we examine the possible formation of textural domain walls in the superfluid 3He-B confined to a thin slab with a sub-micron thickness. When an applied magnetic field is much higher than the dipolar field, two nearly degenerate ground states appear, which are characterized by the Ising order associated with the spontaneous breaking of a magnetic order-two symmetry, lcirc;z = + 1 and - 1 . We here discuss the structure of the textural domain wall formed by the spatial modulation of the Ising order, such as low-lying quasiparticle excitations and spontaneous spin current. We also report bosonic modes bound to the textural domain wall.
Subatomic movements of a domain wall in the Peierls potential.
Novoselov, K S; Geim, A K; Dubonos, S V; Hill, E W; Grigorieva, I V
2003-12-18
The discrete nature of crystal lattices plays a role in virtually every material property. But it is only when the size of entities hosted by a crystal becomes comparable to the lattice period--as occurs for dislocations, vortices in superconductors and domain walls--that this discreteness is manifest explicitly. The associated phenomena are usually described in terms of a background Peierls 'atomic washboard' energy potential, which was first introduced for the case of dislocation motion in the 1940s. This concept has subsequently been invoked in many situations to describe certain features in the bulk behaviour of materials, but has to date eluded direct detection and experimental scrutiny at a microscopic level. Here we report observations of the motion of a single magnetic domain wall at the scale of the individual peaks and troughs of the atomic energy landscape. Our experiments reveal that domain walls can become trapped between crystalline planes, and that they propagate by distinct jumps that match the lattice periodicity. The jumps between valleys are found to involve unusual dynamics that shed light on the microscopic processes underlying domain-wall propagation. Such observations offer a means for probing experimentally the physics of topological defects in discrete lattices--a field rich in phenomena that have been subject to extensive theoretical study.
Domain Walls in the Coupled Gross-Pitaevskii Equations
NASA Astrophysics Data System (ADS)
Alama, Stan; Bronsard, Lia; Contreras, Andres; Pelinovsky, Dmitry E.
2014-09-01
A thorough study of domain wall solutions in coupled Gross-Pitaevskii equations on the real line is carried out including existence of these solutions; their spectral and nonlinear stability; their persistence and stability under a small localized potential. The proof of existence is variational and is presented in a general framework: we show that the domain wall solutions are energy minimizers within a class of vector-valued functions with nontrivial conditions at infinity. The admissible energy functionals include those corresponding to coupled Gross-Pitaevskii equations, arising in modeling of Bose-Einstein condensates. The results on spectral and nonlinear stability follow from properties of the linearized operator about the domain wall. The methods apply to many systems of interest and integrability is not germane to our analysis. Finally, sufficient conditions for persistence and stability of domain wall solutions are obtained to show that stable pinning occurs near maxima of the potential, thus giving rigorous justification to earlier results in the physics literature.
Domain Walls in the Coupled Gross-Pitaevskii Equations
NASA Astrophysics Data System (ADS)
Alama, Stan; Bronsard, Lia; Contreras, Andres; Pelinovsky, Dmitry E.
2015-02-01
A thorough study of domain wall solutions in coupled Gross-Pitaevskii equations on the real line is carried out including existence of these solutions; their spectral and nonlinear stability; their persistence and stability under a small localized potential. The proof of existence is variational and is presented in a general framework: we show that the domain wall solutions are energy minimizers within a class of vector-valued functions with nontrivial conditions at infinity. The admissible energy functionals include those corresponding to coupled Gross-Pitaevskii equations, arising in modeling of Bose-Einstein condensates. The results on spectral and nonlinear stability follow from properties of the linearized operator about the domain wall. The methods apply to many systems of interest and integrability is not germane to our analysis. Finally, sufficient conditions for persistence and stability of domain wall solutions are obtained to show that stable pinning occurs near maxima of the potential, thus giving rigorous justification to earlier results in the physics literature.
Subatomic movements of a domain wall in the Peierls potential
NASA Astrophysics Data System (ADS)
Novoselov, K. S.; Geim, A. K.; Dubonos, S. V.; Hill, E. W.; Grigorieva, I. V.
2003-12-01
The discrete nature of crystal lattices plays a role in virtually every material property. But it is only when the size of entities hosted by a crystal becomes comparable to the lattice period-as occurs for dislocations, vortices in superconductors and domain walls-that this discreteness is manifest explicitly. The associated phenomena are usually described in terms of a background Peierls `atomic washboard' energy potential, which was first introduced for the case of dislocation motion in the 1940s. This concept has subsequently been invoked in many situations to describe certain features in the bulk behaviour of materials, but has to date eluded direct detection and experimental scrutiny at a microscopic level. Here we report observations of the motion of a single magnetic domain wall at the scale of the individual peaks and troughs of the atomic energy landscape. Our experiments reveal that domain walls can become trapped between crystalline planes, and that they propagate by distinct jumps that match the lattice periodicity. The jumps between valleys are found to involve unusual dynamics that shed light on the microscopic processes underlying domain-wall propagation. Such observations offer a means for probing experimentally the physics of topological defects in discrete lattices-a field rich in phenomena that have been subject to extensive theoretical study.
Barkhausen avalanches in anisotropic ferromagnets with 180 degrees domain walls
Tadic; Nowak
2000-04-01
We show that Barkhausen noise in two-dimensional disordered ferromagnets with extended domain walls is characterized by the avalanche size exponent tau(s)=1.54 at low disorder. With increasing disorder the characteristic domain size is reduced relative to the system size due to nucleation of new domains and a dynamic phase transition occurs to the scaling behavior with tau(s)=1.30. The exponents decrease at finite driving rate. The results agree with recently observed behavior in amorphous Metglas and Fe-Co-B ribbons when the applied anisotropic stress is varied.
Domain walls in the quantum transverse Ising model
NASA Astrophysics Data System (ADS)
Henkel, Malte; Harris, A. Brooks; Cieplak, Marek
1995-08-01
We discuss several problems concerning domain walls in the spin-S Ising model at zero temeprature in a magnetic field, H/(2S), applied in the x direction. Some results are also given for the planar (y-z) model in a transverse field. We treat the quantum problem in one dimension by perturbation theory at small H and numerically over a large range of H. We obtain the spin-density profile by fixing the spins at opposite ends of the chain to have opposite signs of Sz. One dimensional is special in that there the quantum width of the wall is proportional to the size L of the system. We also study the quantitative features of the ``particle'' band which extends up to energies of order H above the ground state. Except for the planar limit, this particle band is well separated from excitations having energy J/S involving creation of more walls. At large S this particle band develops energy gaps and the lowest subband has tunnel splittings of order H21-2S. This scale of of energy gives rise to anomalous scaling with respect to (a) finite size, (b) temperature, or (c) random potentials. The intrinsic width of the domain wall and the pinning energy are also defined and calculated in certain limiting cases. The general conclusion is that quantum effects prevent the wall from being sharp and in higher dimension would prevent sudden excursions in the configuration of the wall.
Complex oxide ferroelectrics: Electrostatic doping by domain walls
Maksymovych, Petro
2015-06-19
Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO_{3} and SrTiO_{3} supports a 2D electron gas1 with high mobility of >1,000 cm^{2} V^{-1} s^{-1} (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO_{3} down to the nanoscale.
Non-volatile polarization switch of magnetic domain wall velocity
Huang, Z.; Stolichnov, I.; Setter, N.; Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L.; Auffret, S.; Gaudin, G.
2015-12-21
Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.
Finite elements micromagnetic simulation of domain wall resonance
NASA Astrophysics Data System (ADS)
Ntallis, N.; Efthimiadis, K. G.
2016-09-01
In this work, the finite elements method is used to simulate, by micromagnetic modeling, the motion of a magnetic domain wall under the action of an oscillating external field. In the micromagnetic magnetization dynamics, a nonzero inertia tensor is used, resulting in a partial differential equation also containing the second time derivative of the magnetization. The model is investigated in all of its parameters, and it is validated by solving the NIST problem μMag#4. All the simulations were carried out on spherical particles of an uniaxial magnetocrystalline anisotropy, and they started with the nucleation and the growth of the magnetic domains. Under the influence of an oscillating external field, the susceptibility spectra are calculated for different magnetic parameters. For low damping values in the susceptibility spectra, beyond the contribution of the coherent oscillating domain wall, multiple resonances are also found.
Hall effect in charged conducting ferroelectric domain walls.
Campbell, M P; McConville, J P V; McQuaid, R G P; Prabhakaran, D; Kumar, A; Gregg, J M
2016-12-12
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ∼1 × 10(16) cm(-3) is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of∼50 cm(2)V(-1)s(-1) is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons.
Rashba Torque Driven Domain Wall Motion in Magnetic Helices.
Pylypovskyi, Oleksandr V; Sheka, Denis D; Kravchuk, Volodymyr P; Yershov, Kostiantyn V; Makarov, Denys; Gaididei, Yuri
2016-03-24
Manipulation of the domain wall propagation in magnetic wires is a key practical task for a number of devices including racetrack memory and magnetic logic. Recently, curvilinear effects emerged as an efficient mean to impact substantially the statics and dynamics of magnetic textures. Here, we demonstrate that the curvilinear form of the exchange interaction of a magnetic helix results in an effective anisotropy term and Dzyaloshinskii-Moriya interaction with a complete set of Lifshitz invariants for a one-dimensional system. In contrast to their planar counterparts, the geometrically induced modifications of the static magnetic texture of the domain walls in magnetic helices offer unconventional means to control the wall dynamics relying on spin-orbit Rashba torque. The chiral symmetry breaking due to the Dzyaloshinskii-Moriya interaction leads to the opposite directions of the domain wall motion in left- or right-handed helices. Furthermore, for the magnetic helices, the emergent effective anisotropy term and Dzyaloshinskii-Moriya interaction can be attributed to the clear geometrical parameters like curvature and torsion offering intuitive understanding of the complex curvilinear effects in magnetism.
Rashba Torque Driven Domain Wall Motion in Magnetic Helices
Pylypovskyi, Oleksandr V.; Sheka, Denis D.; Kravchuk, Volodymyr P.; Yershov, Kostiantyn V.; Makarov, Denys; Gaididei, Yuri
2016-01-01
Manipulation of the domain wall propagation in magnetic wires is a key practical task for a number of devices including racetrack memory and magnetic logic. Recently, curvilinear effects emerged as an efficient mean to impact substantially the statics and dynamics of magnetic textures. Here, we demonstrate that the curvilinear form of the exchange interaction of a magnetic helix results in an effective anisotropy term and Dzyaloshinskii–Moriya interaction with a complete set of Lifshitz invariants for a one-dimensional system. In contrast to their planar counterparts, the geometrically induced modifications of the static magnetic texture of the domain walls in magnetic helices offer unconventional means to control the wall dynamics relying on spin-orbit Rashba torque. The chiral symmetry breaking due to the Dzyaloshinskii–Moriya interaction leads to the opposite directions of the domain wall motion in left- or right-handed helices. Furthermore, for the magnetic helices, the emergent effective anisotropy term and Dzyaloshinskii–Moriya interaction can be attributed to the clear geometrical parameters like curvature and torsion offering intuitive understanding of the complex curvilinear effects in magnetism. PMID:27008975
Hall effect in charged conducting ferroelectric domain walls
Campbell, M. P.; McConville, J.P.V.; McQuaid, R.G.P.; Prabhakaran, D.; Kumar, A.; Gregg, J. M.
2016-01-01
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ∼1 × 1016 cm−3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of∼50 cm2V−1s−1 is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons. PMID:27941794
Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M.; Ashcroft, C. M.; Canalias, C.; Gruverman, A.
2014-08-14
Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.
NASA Astrophysics Data System (ADS)
Cheong, Sang-Wook; Rutgers CenterEmergent Materials Team
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO 3 /SrTiO 3 , across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric domain walls can be highly conducting but energetically unfavored; however, they were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr) 3 Ti 2 O 7 single crystals. From the exploration of antiphase domain boundaries, which are hidden in piezoresponse force microscopy, using dark-field electron microscopy, we have explored the macroscopic topology of polarization domains and antiphase domains. We found that the macroscopic domain topology is directly responsible for the presence of charged domain walls, and is closely related with the polarization domain switching mechanism in (Ca,Sr) 3 Ti 2 O 7 . Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Z2 massive axions, domain walls and inflation
NASA Astrophysics Data System (ADS)
Assyyaee, Shahrokh; Riazi, Nematollah
2017-01-01
We have analyzed a U(1) model which is broken explicitly to a Z2 model. The proposal results in generating two types of stable domain walls, in contrast with the more common NDW = 1 version which is already used to explain axion invisibility for the UPQ(1) model. We have tried to take into account any possible relation with previous studies. We have studied some of the domain properties, proposing an approximate solution which satisfies boundary conditions and the static virial theorem, simultaneously. Invoking the mentioned approximation, we have been able to obtain an analytical insight about the effect of parameters on the domain wall features, particularly on their surface energy density which is of great importance in cosmological studies when one tries to avoid domain wall energy domination problem. Next, we have mainly focused on the likely inflationary scenarios resulting from the model, including saddle point inflation, again insisting on analytical discussions to be able to follow the role of parameters. We have tried to relate inflationary scenarios to the known categories to take advantage of the previous detailed studies under the inflationary topic over the decades. We have concluded that any successful inflationary scenario requires large fields within the present model. Calculations are mainly done analytically, although numerical results are also obtained to reinforce the analytical results.
Characterization of magnetic domain walls using electron magnetic chiral dichroism.
Che, Ren Chao; Liang, Chong Yun; He, Xiang; Liu, Hai Hua; Duan, Xiao Feng
2011-04-01
Domain walls and spin states of permalloy were investigated by electron magnetic chiral dichroism (EMCD) technique in Lorentz imaging mode using a JEM-2100F transmission electron microscope. EMCD signals from both Fe and Ni L3,2 edges were detected from the Bloch lines but not from the adjacent main wall. The magnetic polarity orientation of the circular Bloch line is opposite to that of the cross Bloch line. The orientations of Fe and Ni spins are parallel rather than antiparallel, both at the cross Bloch line and circular Bloch line.
Soft acoustic mode in ferroelastic BiVO4
NASA Astrophysics Data System (ADS)
Benyuan, Gu; Copic, M.; Cummins, H. Z.
1981-10-01
Brillouin scattering spectroscopy of bismuth vanadate has revealed a soft acoustic mode which is characteristic of a proper ferroelastic phase transition. Raman scattering has revealed an optic mode which is doubly degenerate Eg in the paraelastic phase and splits into two Bg modes in the ferroelastic phase. The temperature dependence of the splitting is also consistent with a proper ferroelastic transition.
Faster motion of double 360° domain walls system induced by spin-polarized current
Zhang, S. F.; Zhu, Q. Y.; Mu, C. P.; Zheng, Q.; Liu, X. Y.; Liu, Q. F.; Wang, J. B.
2014-05-07
By micromagnetic simulation, we investigated a double 360° domain walls system in two parallel nanowires. Two domain walls are coupled to each other via magnetostatic interaction. When a spin-polarized current is applied to only one nanowire or both nanowires with the same direction, the two domain walls propagate along nanowires together. The critical velocity of such system is obviously higher than that of a single 360° domain wall. The interaction between the two domain walls can be modeled as two bodies that connected by a spring, and we analyzed the coupling characteritics of the double 360° domain walls at last.
Domain Wall Motion by the Magnonic Spin Seebeck Effect
NASA Astrophysics Data System (ADS)
Hinzke, D.; Nowak, U.
2011-07-01
The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.
Longitudinal domain wall formation in elongated assemblies of ferromagnetic nanoparticles.
Varón, Miriam; Beleggia, Marco; Jordanovic, Jelena; Schiøtz, Jakob; Kasama, Takeshi; Puntes, Victor F; Frandsen, Cathrine
2015-09-29
Through evaporation of dense colloids of ferromagnetic ~13 nm ε-Co particles onto carbon substrates, anisotropic magnetic dipolar interactions can support formation of elongated particle structures with aggregate thicknesses of 100-400 nm and lengths of up to some hundred microns. Lorenz microscopy and electron holography reveal collective magnetic ordering in these structures. However, in contrast to continuous ferromagnetic thin films of comparable dimensions, domain walls appear preferentially as longitudinal, i.e., oriented parallel to the long axis of the nanoparticle assemblies. We explain this unusual domain structure as the result of dipolar interactions and shape anisotropy, in the absence of inter-particle exchange coupling.
Domain wall motion by the magnonic spin Seebeck effect.
Hinzke, D; Nowak, U
2011-07-08
The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.
Localization and chiral symmetry in three flavor domain wall QCD
Antonio, David J.; Bowler, Kenneth C.; Boyle, Peter A.; Hart, Alistair; Kenway, Richard D.; Tweedie, Robert J.; Christ, Norman H.; Cohen, Saul D.; Li, Shu; Lin, Meifeng; Mawhinney, Robert D.; Clark, Michael A.; Dawson, Chris; Joo, Balint; Jung, Chulwoo; Maynard, Christopher M.; Ohta, Shigemi; Yamaguchi, Azusa
2008-01-01
We present results for the dependence of the residual mass of domain wall fermions on the size of the fifth dimension and its relation to the density and localization properties of low-lying eigenvectors of the corresponding Hermitian Wilson Dirac operator in three flavor domain wall QCD. Using the DBW2 and Iwasaki gauge actions, we generate ensembles of configurations with a 16{sup 3}x32 space-time volume and an extent of 8 in the fifth dimension for the sea quarks. We demonstrate the existence of a regime where the degree of locality, the size of chiral symmetry breaking, and the rate of topology change can be acceptable for inverse lattice spacings a{sup -1}{>=}1.6 GeV, enabling a programme of simulations of 2+1 flavor QCD to be conducted safely in this region of parameter space.
Exact BPS domain walls at finite gauge coupling
NASA Astrophysics Data System (ADS)
Blaschke, Filip
2017-01-01
Bogomol'nyi-Prasad-Sommerfield solitons in models with spontaneously broken gauge symmetry have been intensively studied at the infinite gauge coupling limit, where the governing equation-the so-called master equation-is exactly solvable. Except for a handful of special solutions, the standing impression is that analytic results at finite coupling are generally unavailable. The aim of this paper is to demonstrate, using domain walls in Abelian-Higgs models as the simplest example, that exact solitons at finite gauge coupling can be readily obtained if the number of Higgs fields (N) is large enough. In particular, we present a family of exact solutions, describing N domain walls at arbitrary positions in models with at least N≥2N+1. We have also found that adding together any pair of solutions can produce a new exact solution if the combined tension is below a certain limit.
Discontinuous properties of current-induced magnetic domain wall depinning
Hu, X. F.; Wu, J.; Niu, D. X.; Chen, L.; Morton, S. A.; Scholl, A.; Huang, Z. C.; Zhai, Y.; Zhang, W.; Will, I.; Xu, Y. B.; Zhang, R.; van der Laan, G.
2013-01-01
The current-induced motion of magnetic domain walls (DWs) confined to nanostructures is of great interest for fundamental studies as well as for technological applications in spintronic devices. Here, we present magnetic images showing the depinning properties of pulse-current-driven domain walls in well-shaped Permalloy nanowires obtained using photoemission electron microscopy combined with x-ray magnetic circular dichroism. In the vicinity of the threshold current density (Jth = 4.2 × 1011 A.m−2) for the DW motion, discontinuous DW depinning and motion have been observed as a sequence of “Barkhausen jumps”. A one-dimensional analytical model with a piecewise parabolic pinning potential has been introduced to reproduce the DW hopping between two nearest neighbour sites, which reveals the dynamical nature of the current-driven DW motion in the depinning regime. PMID:24170087
Kaon B-parameter from quenched domain-wall QCD
Aoki, Y.; Blum, T.; Christ, N.H.; Mawhinney, R.D.
2006-05-01
We present numerical results for the kaon B-parameter, B{sub K}, determined in the quenched approximation of lattice QCD. Our simulations are performed using domain-wall fermions and the renormalization group improved, DBW2 gauge action which combine to give quarks with good chiral symmetry at finite lattice spacing. Operators are renormalized nonperturbatively using the RI/MOM scheme. We study scaling by performing the simulation on two different lattices with a{sup -1}=1.982(30) and 2.914(54) GeV. We combine this quenched scaling study with an earlier calculation of B{sub K} using two flavors of dynamical, domain-wall quarks at a single lattice spacing to obtain B{sub K}{sup MSNDR}({mu}=2 GeV)=0.563(21)(39)(30), were the first error is statistical, the second systematic (without quenching errors) and the third estimates the error due to quenching.
Decays of bosonic and fermionic modes on a domain wall
NASA Astrophysics Data System (ADS)
Loginov, A. Yu.
2017-03-01
The decays of excited bosonic and excited fermionic modes in the external field of the domain wall are studied. The wave functions of the excited fermionic modes are found analytically in the external field approximation. Some properties of the fermionic modes are investigated. The reflection and transmission coefficients are calculated for fermion scattering from the domain wall. Properties of the reflection and transmission coefficients are studied. The decays of the first excited fermionic mode are investigated to the first order in the Yukawa coupling constant. The amplitudes, angular distributions, and widths of these decays are found by analytical and numerical methods. Decays of the excited bosonic mode are also investigated to the first order in the Yukawa and self-interaction coupling constants. The amplitudes, angular distributions, and widths of these decays are obtained analytically and by numerical methods.
Tunable chiral spin texture in magnetic domain-walls.
Franken, J H; Herps, M; Swagten, H J M; Koopmans, B
2014-06-11
Magnetic domain-walls (DWs) with a preferred chirality exhibit very efficient current-driven motion. Since structural inversion asymmetry (SIA) is required for their stability, the observation of chiral domain walls in highly symmetric Pt/Co/Pt is intriguing. Here, we tune the layer asymmetry in this system and observe, by current-assisted DW depinning experiments, a small chiral field which sensitively changes. Moreover, we convincingly link the observed efficiency of DW motion to the DW texture, using DW resistance as a direct probe for the internal orientation of the DW under the influence of in-plane fields. The very delicate effect of capping layer thickness on the chiral field allows for its accurate control, which is important in designing novel materials for optimal spin-orbit-torque-driven DW motion.
Domain-wall motion in random potential and hysteresis modeling
Pasquale, M.; Basso, V.; Bertotti, G.; Jiles, D.C.; Bi, Y.
1998-06-01
Two different approaches to hysteresis modeling are compared using a common ground based on energy relations, defined in terms of dissipated and stored energy. Using the Preisach model and assuming that magnetization is mainly due to domain-wall motion, one can derive the expression of magnetization along a major loop typical of the Jiles{endash}Atherton model and then extend its validity to cases where mean-field effects and reversible contributions are present. {copyright} {ital 1998 American Institute of Physics.}
Experimental Study on Current-Driven Domain Wall Motion
NASA Astrophysics Data System (ADS)
Ono, T.; Yamaguchi, A.; Tanigawa, H.; Yano, K.; Kasai, S.
2006-06-01
Current-driven domain wall (DW) motion for a well-defined single DW in a micro-fabricated magnetic wire with submicron width was investigated by real-space observation with magnetic force microscopy. Magnetic force microscopy visualizes that a single DW introduced in a wire is displaced back and forth by positive and negative pulsed-current, respectively. Effect of the Joule heating, reduction of the threshold current density by shape control, and magnetic ratchet effect are also presented.
Analysis of ultra-narrow ferromagnetic domain walls
Jenkins, Catherine; Paul, David
2012-01-10
New materials with high magnetic anisotropy will have domains separated by ultra-narrow ferromagnetic walls with widths on the order of a few unit cells, approaching the limit where the elastic continuum approximation often used in micromagnetic simulations is accurate. The limits of this approximation are explored, and the static and dynamic interactions with intrinsic crystalline defects and external driving elds are modeled. The results developed here will be important when considering the stability of ultra-high-density storage media.
Critical domain-wall dynamics of model B.
Dong, R H; Zheng, B; Zhou, N J
2009-05-01
With Monte Carlo methods, we simulate the critical domain-wall dynamics of model B, taking the two-dimensional Ising model as an example. In the macroscopic short-time regime, a dynamic scaling form is revealed. Due to the existence of the quasirandom walkers, the magnetization shows intrinsic dependence on the lattice size L . An exponent which governs the L dependence of the magnetization is measured to be sigma=0.243(8) .
Asymmetric angular dependence of domain wall motion in magnetic nanowires.
Nam, Chunghee
2013-03-01
An angular dependence of domain wall (DW) motion is studied in a magnetic wire consisting of a giant-magnetoresistance spin-valve. A DW pinning site is formed by a single notch, where a conventional linear one and a specially designed tilted one are compared. The asymmetric angular dependence was found in the DW depinning behavior with the tilted notch. The geometry control of the pinning site can be useful for DW diode devices using a rotating magnetic field.
Dynamics of biased domain walls and the devaluation mechanism
NASA Astrophysics Data System (ADS)
Avelino, P. P.; Martins, C. J. A. P.; Sousa, L.
2008-08-01
We study the evolution of biased domain walls in the early universe. We explicitly discuss the roles played by the surface tension and volume pressure in the evolution of the walls, and quantify their effects by looking at the collapse of spherical wall solutions. We then apply our results to a particular mechanism, known as the devaluation scenario, in which the dynamics of biased domain walls was suggested as a possible solution to the cosmological constant problem. Our results indicate that devaluation will, in general, lead to values of the cosmological constant that differ by several orders of magnitude from the observationally inferred value, ρvac1/4˜10-3eV. We also argue that the reasons behind this are not specific to a particular realization, and are expected to persist in any scenario of this kind, except if a low-energy cutoff on the spectra of vacuum energy densities, of the order of the critical density at the present time, is postulated. This implies that any such scenario will require a fine-tuning similar to the usual one.
Symmetry-protected topological phases from decorated domain walls.
Chen, Xie; Lu, Yuan-Ming; Vishwanath, Ashvin
2014-03-26
Symmetry-protected topological phases generalize the notion of topological insulators to strongly interacting systems of bosons or fermions. A sophisticated group cohomology approach has been used to classify bosonic symmetry-protected topological phases, which however does not transparently predict their properties. Here we provide a physical picture that leads to an intuitive understanding of a large class of symmetry-protected topological phases in d=1,2,3 dimensions. Such a picture allows us to construct explicit models for the symmetry-protected topological phases, write down ground state wave function and discover topological properties of symmetry defects both in the bulk and on the edge of the system. We consider symmetries that include a Z2 subgroup, which allows us to define domain walls. While the usual disordered phase is obtained by proliferating domain walls, we show that symmetry-protected topological phases are realized when these domain walls are decorated, that is, are themselves symmetry-protected topological phases in one lower dimension. This construction works both for unitary Z2 and anti-unitary time reversal symmetry.
Dynamics of domain walls in Ti-Ni-Cu alloy
NASA Astrophysics Data System (ADS)
Liang, X. L.; Zhang, Z. F.; Liu, Q.; Shen, H. M.; Wang, Y. N.; Shi, P.; Chen, F. X.; Yang, D. Z.
1999-12-01
The internal friction for Ti-Ni-Cu shape memory alloys (SMAs) was measured in the Hz and kHz range. The peak temperature in the Hz range is independent of the measuring frequencies. Only in the tens of kHz range does the peak temperature shift with the frequencies, showing a thermally activated progress with icons/Journals/Common/tau" ALT="tau" ALIGN="TOP"/> = icons/Journals/Common/tau" ALT="tau" ALIGN="TOP"/>0e-B/Tc - T, characteristic of viscous motion of domain walls, instead of the Arrhenius relation. Taking into account the change of the density of the domain walls during the phase transformation, we modified the Q-1-formula by using a model of viscous motion of domain walls, obtaining a good result in agreement with the experimental data. Additionally, corresponding parameters, which play a key role in the shape memory effect, such as the viscosity coefficient and the effective pinning force constant, were obtained.
Third type of domain wall in soft magnetic nanostrips.
Nguyen, V D; Fruchart, O; Pizzini, S; Vogel, J; Toussaint, J-C; Rougemaille, N
2015-07-23
Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became in the past years the subject of intense works, mainly focused on controlling, manipulating, and moving their internal magnetic configuration. In nanostrips with in-plane magnetisation, two DWs have been identified: in thin and narrow strips, transverse walls are energetically favored, while in thicker and wider strips vortex walls have lower energy. The associated phase diagram is now well established and often used to predict the low-energy magnetic configuration in a given magnetic nanostructure. However, besides the transverse and vortex walls, we find numerically that another type of wall exists in permalloy nanostrips. This third type of DW is characterised by a three-dimensional, flux closure micromagnetic structure with an unusual length and three internal degrees of freedom. Magnetic imaging on lithographically-patterned permalloy nanostrips confirms these predictions and shows that these DWs can be moved with an external magnetic field of about 1 mT. An extended phase diagram describing the regions of stability of all known types of DWs in permalloy nanostrips is provided.
Domain wall motion driven by an oscillating magnetic field
NASA Astrophysics Data System (ADS)
Moon, Kyoung-Woong; Kim, Duck-Ho; Kim, Changsoo; Kim, Dae-Yun; Choe, Sug-Bong; Hwang, Chanyong
2017-03-01
The coherent unidirectional motion of magnetic domain walls (DWs) is a key technology used in memory and logic device applications, as demonstrated in magnetic strips by electric current flow as well as in films by oscillation of a tilted magnetic field. Here we introduce a coherent unidirectional motion of DWs in the strip, utilizing an oscillating field, which is described within a previous 1D model. The essential criterion for DW motion in this approach is the oscillating-field-induced modulation of the DW width, which has not been previously considered. This DW motion driven by width modulation sheds light on high frequency domain manipulation in spin devices. A comprehensive inspection of field angle dependence reveals that unidirectional DW motion in this model requires chiral DWs, followed by asymmetric deformation of the domain shape.
Propagating and reflecting of spin wave in permalloy nanostrip with 360° domain wall
Zhang, Senfu; Mu, Congpu; Zhu, Qiyuan; Zheng, Qi; Liu, Xianyin; Wang, Jianbo; Liu, Qingfang
2014-01-07
By micromagnetic simulation, we investigated the interaction between propagating spin wave (or magnonic) and a 360° domain wall in a nanostrip. It is found that propagating spin wave can drive a 360° domain wall motion, and the velocity and direction are closely related to the transmission coefficient of the spin wave of the domain wall. When the spin wave passes through the domain wall completely, the 360° domain wall moves toward the spin wave source. When the spin wave is reflected by the domain wall, the 360° domain wall moves along the spin wave propagation direction. Moreover, when the frequency of the spin wave is coincident with that of the 360° domain wall normal mode, the 360° domain wall velocity will be resonantly enhanced no matter which direction the 360 DW moves along. On the other hand, when the spin wave is reflected from the moving 360° domain wall, we observed the Doppler effect clearly. After passing through a 360° domain wall, the phase of the spin wave is changed, and the phase shift is related to the frequency. Nevertheless, phase shift could be manipulated by the number of 360° domain walls that spin wave passing through.
Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics
NASA Astrophysics Data System (ADS)
Esin, A. A.; Alikin, D. O.; Turygin, A. P.; Abramov, A. S.; Hreščak, J.; Walker, J.; Rojac, T.; Bencan, A.; Malic, B.; Kholkin, A. L.; Shur, V. Ya.
2017-02-01
The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such "extrinsic" contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials.
G-structures and domain walls in heterotic theories
NASA Astrophysics Data System (ADS)
Lukas, Andre; Matti, Cyril
2011-01-01
We consider heterotic string solutions based on a warped product of a four-dimensional domain wall and a six-dimensional internal manifold, preserving two supercharges. The constraints on the internal manifolds with SU(3) structure are derived. They are found to be generalized half-flat manifolds with a particular pattern of torsion classes and they include half-flat manifolds and Strominger's complex non-Kahler manifolds as special cases. We also verify that previous heterotic compactifications on half-flat mirror manifolds are based on this class of solutions.
Higher dimensional curved domain walls on Kähler surfaces
NASA Astrophysics Data System (ADS)
Akbar, Fiki T.; Gunara, Bobby E.; Radjabaycolle, Flinn C.; Wijaya, Rio N.
2017-03-01
In this paper we study some aspects of curved BPS-like domain walls in higher dimensional gravity theory coupled to scalars where the scalars span a complex Kähler surface with scalar potential turned on. Assuming that a fake superpotential has a special form which depends on Kähler potential and a holomorphic function, we prove that BPS-like equations have a local unique solution. Then, we analyze the vacuum structure of the theory including their stability using dynamical system and their existence in ultraviolet-infrared regions using renormalization group flow.
Domain wall displacement by remote spin-current injection
Skirdkov, P. N.; Zvezdin, K. A.; Belanovsky, A. D.; Zvezdin, A. K.; Grollier, J.; Cros, V.
2014-06-16
We demonstrate numerically the ability to displace a magnetic domain wall (DW) by remote spin current injection. We consider a long and narrow magnetic nanostripe with a single DW. The spin-polarized current is injected perpendicularly to the film plane through a small nanocontact which is located at certain distance from the DW initial position. We show that the DW motion can be initiated not only by conventional spin-transfer torque but also by indirect spin-torque, created by remote spin-current injection and then transferred to the DW by the exchange-spring mechanism. An analytical description of this effect is proposed.
High temperature meson propagators with domain-wall quarks.
Lagae, J.-F.; Sinclair, D. K.
1999-09-23
We study the chiral properties of domain-wall quarks at high temperatures on an ensemble of quenched configurations. Low lying eigenmodes of the Dirac operator are calculated and used to check the extent to which the Atiyah-Singer index theorem is obeyed on lattices with finite N{sub 5}. We calculate the connected and disconnected screening propagators for the lowest mass scalar and pseudoscalar mesons in the sectors of different topological charge and note that they behave as expected. Separating out the would-be zero eigenmodes enables us to accurately estimate the disconnected propagators with far less effort than would be needed otherwise.
Higher-spin modes in a domain-wall universe
NASA Astrophysics Data System (ADS)
Kulaxizi, Manuela; Rahman, Rakibur
2014-10-01
We find a consistent set of equations of motion and constraints for massive higher-spin fluctuations in a gravitational background, required of certain characteristic properties but more general than constant curvature space. Of particular interest among such geometries is a thick domain wall-a smooth version of the Randall-Sundrum metric. Apart from the graviton zero mode, the brane accommodates quasi-bound massive states of higher spin contingent on the bulk mass. We estimate the mass and lifetime of these higher-spin resonances, which may appear as metastable dark matter in a braneworld universe.
Longitudinal domain wall formation in elongated assemblies of ferromagnetic nanoparticles
Varón, Miriam; Beleggia, Marco; Jordanovic, Jelena; Schiøtz, Jakob; Kasama, Takeshi; Puntes, Victor F.; Frandsen, Cathrine
2015-01-01
Through evaporation of dense colloids of ferromagnetic ~13 nm ε-Co particles onto carbon substrates, anisotropic magnetic dipolar interactions can support formation of elongated particle structures with aggregate thicknesses of 100–400 nm and lengths of up to some hundred microns. Lorenz microscopy and electron holography reveal collective magnetic ordering in these structures. However, in contrast to continuous ferromagnetic thin films of comparable dimensions, domain walls appear preferentially as longitudinal, i.e., oriented parallel to the long axis of the nanoparticle assemblies. We explain this unusual domain structure as the result of dipolar interactions and shape anisotropy, in the absence of inter-particle exchange coupling. PMID:26416297
Control of ultranarrow Co magnetic domain wall widths in artificially patterned H-bar structures
NASA Astrophysics Data System (ADS)
Yang, Z. J.; Sun, L.; Zhang, X. P.; Cao, M.; Deng, X. Y.; Hu, An; Ding, H. F.
2009-02-01
Micromagnetic simulations of Co domain walls on nanometer crossbars that join two oppositely magnetized parallel legs of "H" shaped patterns are studied. The crossbar domain walls can twist in the plane of the H-pattern, out of the plane, or swirl, forming Néel, Bloch, or vortex structures, respectively, depending on the initial configurations. An energy phase diagram as a function of the crossbar constriction yields the Néel wall as the energetically most favorable, followed by the Bloch wall, which becomes unstable and changes into a vortex-like wall with increasing crossbar size. Most interestingly, the Néel wall width can either shrink or expand depending on the crossbar dimensions. In the case that both the crossbar length and width are small, desirable, ultranarrow domain walls can be obtained. These findings are useful for spintronic device design based on domain wall pinning via nanonotch and domain-wall magnetoresistance approaches.
Magnetic Hardening from the Suppression of Domain Walls by Nonmagnetic Particles
Hu, Shenyang Y.; Li, Yulan; McCloy, John S.; Montgomery, Robert O.; Henager, Charles H.
2013-03-07
Magnetic domain switching and hysteresis loops in a single crystal α-iron with and without nonmagnetic particles were simulated based on the magnetization dynamics of the Landau–Lifshitz–Gilbert equation. It is found that the 360o Bloch domain wall is the easiest nucleation site for an anti-direction domain. The nucleation occurs by splitting the 360o Bloch domain wall into two 180o domain walls. However, the existence of nonmagnetic particles destroys the 180o domain walls and prevents the formation of 360o Bloch domain walls. Simulation results demonstrate that the impact of nonmagnetic particle on the formation of the 360o Bloch domain wall is a magnetic hardening mechanism.
Honeycomb and triangular domain wall networks in heteroepitaxial systems
NASA Astrophysics Data System (ADS)
Elder, K. R.; Chen, Z.; Elder, K. L. M.; Hirvonen, P.; Mkhonta, S. K.; Ying, S.-C.; Granato, E.; Huang, Zhi-Feng; Ala-Nissila, T.
2016-05-01
A comprehensive study is presented for the influence of misfit strain, adhesion strength, and lattice symmetry on the complex Moiré patterns that form in ultrathin films of honeycomb symmetry adsorbed on compact triangular or honeycomb substrates. The method used is based on a complex Ginzburg-Landau model of the film that incorporates elastic strain energy and dislocations. The results indicate that different symmetries of the heteroepitaxial systems lead to distinct types of domain wall networks and phase transitions among various surface Moiré patterns and superstructures. More specifically, the results show a dramatic difference between the phase diagrams that emerge when a honeycomb film is adsorbed on substrates of honeycomb versus triangular symmetry. It is also shown that in the small deformation limit, the complex Ginzburg-Landau model reduces to a two-dimensional sine-Gordon free energy form. This free energy can be solved exactly for one dimensional patterns and reveals the role of domains walls and their crossings in determining the nature of the phase diagrams.
Chiral damping in magnetic domain-walls (Conference Presentation)
NASA Astrophysics Data System (ADS)
Jue, Emilie; Safeer, C. K.; Drouard, Marc; Lopez, Alexandre; Balint, Paul; Buda-Prejbeanu, Liliana; Boulle, Olivier; Auffret, Stéphane; Schuhl, Alain; Manchon, Aurélien; Miron, Ioan Mihai; Gaudin, Gilles
2016-10-01
The Dzyaloshinskii-Moriya interaction is responsible for chiral magnetic textures (skyrmions, spin spiral structures, …) in systems with structural inversion asymmetry and high spin-orbit coupling. It has been shown that the domain wall (DW) dynamics in such materials can be explained by chiral DWs with (partly or fully) Néel structure, whose stability derives from an interfacial DMI [1]. In this work, we show that DMI is not the only effect inducing chiral dynamics and demonstrate the existence of a chiral damping [2]. This result is supported by the study of the asymmetry induced by an in-plane magnetic field on field induced domain wall motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. Whereas the asymmetry of the DW motion is consistent with the spatial symmetries expected with the DMI, we show that this asymmetry cannot be attributed to an effective field but originates from a purely dissipative mechanism. The observation of chiral damping, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexist with DMI it is essential for conceiving DW and skyrmion devices. [1] A. Thiaville, et al., EPL 100, 57002 (2012) [2] E. Jué, et al., Nat. Mater., in press (doi: 10.1038/nmat4518)
Quantum Annealing and Tunable Magnetic Domain Wall Tunneling
NASA Astrophysics Data System (ADS)
Rosenbaum, Thomas F.
2001-03-01
Traditional simulated annealing utilizes thermal fluctuations for convergence in optimization problems. Quantum tunneling provides a different mechanism for moving between states, with the potential for reduced time scales. We compare thermal and quantum annealing in a model Ising ferromagnet composed of holmium dipoles in a lithium tetrafluoride matrix. The effects of quantum mechanics can be tuned in the laboratory by varying a magnetic field applied transverse to the Ising axis. This new knob permits us to: (1) tune the crossover between a classical Arrhenius response at high temperatures and an athermal response below 100 mK; (2) quantify the tunneling of magnetic domain walls through potential energy barriers in terms of an effective mass [1]; and (3) hasten convergence to the optimal state [2]. [1] "Tunable Quantum Tunneling of Magnetic Domain Walls," J. Brooke, T.F. Rosenbaum and G. Aeppli, preprint (2000). [2] "Quantum Annealing of a Disordered Magnet," J. Brooke, D. Bitko, T.F. Rosenbaum and G. Aeppli, Science 284, 779 (1999).
Magnetic domain wall induced ferroelectricity in double perovskites
Zhou, Hai Yang; Zhao, Hong Jian E-mail: xmchen59@zju.edu.cn; Chen, Xiang Ming E-mail: xmchen59@zju.edu.cn; Zhang, Wen Qing
2015-04-13
Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu{sub 2}CoMnO{sub 6} has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R{sup 3+}, Ni{sup 2+}, Mn{sup 4+}, and O{sup 2−} ions in double perovskites R{sub 2}NiMnO{sub 6} (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P2{sub 1} symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.
Magnetic domain wall induced ferroelectricity in double perovskites
NASA Astrophysics Data System (ADS)
Zhou, Hai Yang; Zhao, Hong Jian; Zhang, Wen Qing; Chen, Xiang Ming
2015-04-01
Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu2CoMnO6 has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R3+, Ni2+, Mn4+, and O2- ions in double perovskites R2NiMnO6 (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P21 symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.
Domain wall motion in sub-100 nm magnetic wire
NASA Astrophysics Data System (ADS)
Siddiqui, Saima; Dutta, Sumit; Currivan, Jean Anne; Ross, Caroline; Baldo, Marc
2015-03-01
Nonvolatile memory devices such as racetrack memory rely on the manipulation of domain wall (DW) in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and magnetostatic interaction, DW pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. We report on the field driven DW statistics in sub-100 nm wide nanowires made from Co films with very small edge roughness. The nanowires were patterned in the form of a set of concentric rings of 10 μm diameter. Two different width nanowires with two different spacings have been studied. The rings were first saturated in plane to produce onion states and then the DWs were translated in the wires using an orthogonal in-plane field. The position of the DWs in the nanowires was determined with magnetic force microscopy. From the positions of the DWs in the nanowires, the strength of the extrinsic pinning sites was identified and they follow two different distributions in two different types of nanowire rings. For the closely spaced wires, magnetostatic interactions led to correlated movement of DWs in neighboring wires. The implications of DW pinning and interaction in nanoscale DW devices will be discussed.
Soliton-dependent plasmon reflection at bilayer graphene domain walls.
Jiang, Lili; Shi, Zhiwen; Zeng, Bo; Wang, Sheng; Kang, Ji-Hun; Joshi, Trinity; Jin, Chenhao; Ju, Long; Kim, Jonghwan; Lyu, Tairu; Shen, Yuen-Ron; Crommie, Michael; Gao, Hong-Jun; Wang, Feng
2016-08-01
Layer-stacking domain walls in bilayer graphene are emerging as a fascinating one-dimensional system that features stacking solitons structurally and quantum valley Hall boundary states electronically. The interactions between electrons in the 2D graphene domains and the one-dimensional domain-wall solitons can lead to further new quantum phenomena. Domain-wall solitons of varied local structures exist along different crystallographic orientations, which can exhibit distinct electrical, mechanical and optical properties. Here we report soliton-dependent 2D graphene plasmon reflection at different 1D domain-wall solitons in bilayer graphene using near-field infrared nanoscopy. We observe various domain-wall structures in mechanically exfoliated graphene bilayers, including network-forming triangular lattices, individual straight or bent lines, and even closed circles. The near-field infrared contrast of domain-wall solitons arises from plasmon reflection at domain walls, and exhibits markedly different behaviours at the tensile- and shear-type domain-wall solitons. In addition, the plasmon reflection at domain walls exhibits a peculiar dependence on electrostatic gating. Our study demonstrates the unusual and tunable coupling between 2D graphene plasmons and domain-wall solitons.
X-ray imaging of extended magnetic domain walls in Ni80Fe20 wires
Basu, S.; Fry, P. W.; Allwood, D. A.; Bryan, M. T.; Gibbs, M. R. J.; Schrefl, T.; Im, M.-Y.; Fischer, P.
2009-06-20
We have used magnetic transmission X-ray microscopy to image magnetization configurations in 700 nm wide Ni{sub 80}Fe{sub 20} planar wires attached to 'nucleation' pads Domain walls were observed to inject only across half of the wire width but extend to several micrometers in length. Magnetostatic interactions with adjacent wires caused further unusual domain wall behavior. Micromagnetic modeling suggests the extended walls have Neel-like structure along their length and indicates weaker exchange coupling than is often assumed. These observations explain previous measurements of domain wall injection and demonstrate that magnetic domain walls in larger nanowires cannot always be considered as localized entities.
Domain-wall superconductivity in superconductor-ferromagnet hybrids.
Yang, Zhaorong; Lange, Martin; Volodin, Alexander; Szymczak, Ritta; Moshchalkov, Victor V
2004-11-01
Superconductivity and magnetism are two antagonistic cooperative phenomena, and the intriguing problem of their coexistence has been studied for several decades. Recently, artificial hybrid superconductor-ferromagnet systems have been commonly used as model systems to reveal the interplay between competing superconducting and magnetic order parameters, and to verify the existence of new physical phenomena, including the predicted domain-wall superconductivity (DWS). Here we report the experimental observation of DWS in superconductor-ferromagnet hybrids using a niobium film on a BaFe(12)O(19) single crystal. We found that the critical temperature T(c) of the superconductivity nucleation in niobium increases with increasing field until it reaches the saturation field of BaFe(12)O(19). In accordance with the field-shift of the maximum value of T(c), pronounced hysteresis effects have been found in resistive transitions. We argue that the compensation of the applied field by the stray fields of the magnetic domains as well as the change in the domain structure is responsible for the appearance of the DWS and the coexistence of superconductivity and magnetism in the superconductor-ferromagnet hybrids.
Efficient stopping of current-driven domain wall using a local Rashba field
NASA Astrophysics Data System (ADS)
Tatara, Gen; Saarikoski, Henri; Mitsumata, Chiharu
2016-10-01
We show theoretically that a locally embedded Rashba interaction acts as a strong pinning center for current-driven domain walls and demonstrate efficient capturing and depinning of the wall using a weak Rashba interaction of the order of 0.01 eV Å. Our discovery is expected to be useful for highly reliable control of domain walls in racetrack memories.
Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls.
P Del Real, Rafael; Raposo, Victor; Martinez, Eduardo; Hayashi, Masamitsu
2017-03-08
Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls. The distance between the two walls can be reduced with the application of the out-of-plane field, allowing the formation of coupled domain walls. Surprisingly, the current driven velocity of such coupled walls is independent of the out-of-plane field, enabling manipulation of significantly compressed coupled domain walls using current pulses. Moreover, we find that a single current pulse with optimum amplitude can create a large number of closely spaced domain walls. These features allow current induced generation and synchronous motion of highly packed chiral domain walls, a key feature essential for developing domain wall based storage devices.
Rousseau, Olivier; Weil, Raphael; Rohart, Stanislas; Mougin, Alexandra
2016-01-01
This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO3 single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO3 polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO3 crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography. PMID:26987937
NASA Astrophysics Data System (ADS)
Rousseau, Olivier; Weil, Raphael; Rohart, Stanislas; Mougin, Alexandra
2016-03-01
This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO3 single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO3 polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO3 crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography.
Depinning Transition of a Domain Wall in Ferromagnetic Films
Xi, Bin; Luo, Meng-Bo; Vinokur, Valerii M.; Hu, Xiao
2015-01-01
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe nonconventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. We observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius and conventional Arrhenius-type DW motions. PMID:26365753
Domain wall oscillations induced by spin torque in magnetic nanowires
Sbiaa, R.; Chantrell, R. W.
2015-02-07
Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.
Role of entropy in domain wall motion in thermal gradients.
Schlickeiser, F; Ritzmann, U; Hinzke, D; Nowak, U
2014-08-29
Thermally driven domain wall (DW) motion caused solely by magnonic spin currents was forecast theoretically and has been measured recently in a magnetic insulator using magneto-optical Kerr effect microscopy. We present an analytical calculation of the DW velocity as well as the Walker breakdown within the framework of the Landau Lifshitz Bloch equation of motion. The temperature gradient leads to a torque term acting on the magnetization where the DW is mainly driven by the temperature dependence of the exchange stiffness, or--in a more general picture--by the maximization of entropy. The existence of this entropic torque term does not rest on the angular momentum transfer from the magnonic spin current. Hence, even DWs in antiferromagnets or compensated ferrimagnets should move accordingly. We further argue that the entropic torque exceeds that of the magnonic spin current.
Transverse Domain Wall Profile for Spin Logic Applications
Goolaup, S.; Ramu, M.; Murapaka, C.; Lew, W. S.
2015-01-01
Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement. PMID:25900455
Coupled domain wall oscillations in magnetic cylindrical nanowires
Murapaka, Chandrasekhar; Goolaup, S.; Purnama, I.; Lew, W. S.
2015-02-07
We report on transverse domain wall (DW) dynamics in two closely spaced cylindrical nanowires. The magnetostatically coupled DWs are shown to undergo an intrinsic oscillatory motion along the nanowire length in addition to their default rotational motion. In the absence of external forces, the amplitude of the DW oscillation is governed by the change in the frequency of the DW rotation. It is possible to sustain the DW oscillations by applying spin-polarized current to the nanowires to balance the repulsive magnetostatic coupling. The current density required to sustain the DW oscillation is found to be in the order of 10{sup 5 }A/cm{sup 2}. Morover, our analysis of the oscillation reveals that the DWs in cylindrical nanowires possess a finite mass.
BPS domain walls in {N}=4 supergravity and dual flows
NASA Astrophysics Data System (ADS)
Cassani, Davide; Dall'Agata, Gianguido; Faedo, Anton F.
2013-03-01
We establish the conditions for supersymmetric domain wall solutions to {N}=4 gauged supergravity in five dimensions. These read as BPS first-order equations for the warp factor and the scalar fields, driven by a superpotential and supplemented by a set of constraints that we specify in detail. Then we apply our results to certain consistent truncations of IIB supergravity, thus exploring their dual field theory renormalization group flows. We find a universal flow deforming superconformal theories on D3-branes at Calabi-Yau cones. Moreover, we obtain a superpotential for the solution corresponding to the baryonic branch of the Klebanov-Strassler theory, as well as the superpotential for the flow describing D3 and wrapped D5-branes on the resolved conifold.
Investigation of dominant spin wave modes by domain walls collision
Ramu, M.; Purnama, I.; Goolaup, S.; Chandra Sekhar, M.; Lew, W. S.
2014-06-28
Spin wave emission due to field-driven domain wall (DW) collision has been investigated numerically and analytically in permalloy nanowires. The spin wave modes generated are diagonally symmetric with respect to the collision point. The non-propagating mode has the highest amplitude along the middle of the width. The frequency of this mode is strongly correlated to the nanowire geometrical dimensions and is independent of the strength of applied field within the range of 0.1 mT to 1 mT. For nanowire with film thickness below 5 nm, a second spin wave harmonic mode is observed. The decay coefficient of the spin wave power suggests that the DWs in a memory device should be at least 300 nm apart for them to be free of interference from the spin waves.
Investigation of dominant spin wave modes by domain walls collision
NASA Astrophysics Data System (ADS)
Ramu, M.; Purnama, I.; Goolaup, S.; Chandra Sekhar, M.; Lew, W. S.
2014-06-01
Spin wave emission due to field-driven domain wall (DW) collision has been investigated numerically and analytically in permalloy nanowires. The spin wave modes generated are diagonally symmetric with respect to the collision point. The non-propagating mode has the highest amplitude along the middle of the width. The frequency of this mode is strongly correlated to the nanowire geometrical dimensions and is independent of the strength of applied field within the range of 0.1 mT to 1 mT. For nanowire with film thickness below 5 nm, a second spin wave harmonic mode is observed. The decay coefficient of the spin wave power suggests that the DWs in a memory device should be at least 300 nm apart for them to be free of interference from the spin waves.
Depinning transition of a domain wall in ferromagnetic films
Xi, Bin; Luo, Meng -Bo; Vinokur, Valerii M.; Hu, Xiao
2015-09-14
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe non-conventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. In addition, we observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius and conventional Arrhenius-type DW motions.
Depinning transition of a domain wall in ferromagnetic films
Xi, Bin; Luo, Meng -Bo; Vinokur, Valerii M.; ...
2015-09-14
We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe non-conventional activation-type motion of DW and reveal the fractal structure of DW near the depinning transition. We determine scaling functions describing critical dynamics near the transition and obtain universal exponents establishing connection between thermal softening of pinning potential and critical dynamics. In addition, we observe that tuning the strength of the dipole-dipole interaction switches DW dynamics between two different universality classes, corresponding to two distinct dynamic regimes characterized by non-Arrhenius andmore » conventional Arrhenius-type DW motions.« less
Measurement of magnetic domain wall width using energy-filtered Fresnel images.
Lloyd, S J; Loudon, J C; Midgley, P A
2002-08-01
Magnetic domain walls in Nd2Fe14B have been examined using a series of energy-filtered Fresnel images in the field emission gun transmission electron microscope (FEGTEM). We describe the changes in the intensity distribution of the convergent wall image as a function of defocus, foil thickness and domain wall width. The effect of tilted domain walls and beam convergence on the fringe pattern is also discussed. A comparison of the experimental intensity profile with that from simulations allows the domain wall width to be determined. Measurement of very narrow walls is made possible only by using a relatively thick foil, which necessitates energy-filtering to allow quantitative comparison with simulations. The magnetic domain wall width in Nd2Fe14B was found to be 3 +/- 2 nm.
Thomas, Luc; Hayashi, Masamitsu; Moriya, Rai; Rettner, Charles; Parkin, Stuart
2012-05-01
Head-to-head and tail-to-tail magnetic domain walls in nanowires behave as free magnetic monopoles carrying a single magnetic charge. Since adjacent walls always carry opposite charges, they attract one another. In most cases this long-range attractive interaction leads to annihilation of the two domain walls. Here, we show that, in some cases, a short-range repulsive interaction suppresses annihilation of the walls, even though the lowest energy state is without any domain walls. This repulsive interaction is a consequence of topological edge defects that have the same winding number. We show that the competition between the attractive and repulsive interactions leads to the formation of metastable bound states made up of two or more domain walls. We have created bound states formed from up to eight domain walls, corresponding to the magnetization winding up over four complete 360° rotations.
Electric field induced domain-wall dynamics: Depinning and chirality switching
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Dusad, Ritika; Hoffman, Silas; Tserkovnyak, Yaroslav; Alzate, Juan G.; Amiri, Pedram Khalili; Wang, Kang L.
2013-12-01
We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Néel and Bloch domain walls in an elliptical MTJ. Furthermore, we develop a phenomenological model of a quasi-one-dimensional domain wall confined by a parabolic potential and show that, near the Néel-to-Bloch-wall transition, a pulsed electric field induces precessional domain-wall motion which can be used to reverse the chirality of a Néel wall and even depin it. This domain-wall motion controlled by electric fields, in lieu of applied current, may provide a model for ultralow-power domain-wall memory and logic devices.
Theoretical study of magnetic domain walls through a cobalt nanocontact
NASA Astrophysics Data System (ADS)
Balogh, László; Palotás, Krisztián; Udvardi, László; Szunyogh, László; Nowak, Ulrich
2012-07-01
To calculate the magnetic ground state of nanoparticles we present a self-consistent first-principles method in terms of a fully relativistic embedded cluster multiple scattering Green's function technique. Based on the derivatives of the band energy, a Newton-Raphson algorithm is used to find the ground-state configuration. The method is applied to a cobalt nanocontact that turned out to show a cycloidal domain wall configuration between oppositely magnetized leads. We found that a wall of cycloidal spin structure is about 30 meV lower in energy than the one of helical spin structure. A detailed analysis revealed that the uniaxial on-site anisotropy of the central atom is mainly responsible to this energy difference. This high uniaxial anisotropy energy is accompanied by a huge enhancement and anisotropy of the orbital magnetic moment of the central atom. By varying the magnetic orientation at the central atom, we identified the term related to exchange couplings (Weiss-field term), various on-site anisotropy terms, and also those due to higher order spin interactions.
Domain walls in finite-width nanowires with interfacial Dzyaloshinskii-Moriya interaction
NASA Astrophysics Data System (ADS)
DeJong, M. D.; Livesey, K. L.
2017-02-01
It is widely known that the interfacial Dzyaloshinskii-Moriya interaction (DMI) may stabilize Néel walls rather than Bloch walls in magnetic thin films. When the DMI is weak, it results in a "tilted" Bloch wall. However, for most applications, domain walls are in nanowires rather than thin films. Here we present a semianalytic two-parameter calculation for the static domain wall in a nanowire of finite width and thickness, with DMI. The DMI strength that is needed to force a Néel wall is smaller in nanowires than in films due to demagnetizing energy. Even nanowires that are hundreds of nanometers wide may have different domain wall solutions than thin films and so their finite size must be considered. The impact of this result on current experiments is briefly discussed. We extend the model to show that applying a weak magnetic field allows the domain wall type to be tuned.
Coupled Néel domain wall motion in sandwiched perpendicular magnetic anisotropy nanowires.
Purnama, I; Kerk, I S; Lim, G J; Lew, W S
2015-03-04
The operating performance of a domain wall-based magnetic device relies on the controlled motion of the domain walls within the ferromagnetic nanowires. Here, we report on the dynamics of coupled Néel domain wall in perpendicular magnetic anisotropy (PMA) nanowires via micromagnetic simulations. The coupled Néel domain wall is obtained in a sandwich structure, where two PMA nanowires that are separated by an insulating layer are stacked vertically. Under the application of high current density, we found that the Walker breakdown phenomenon is suppressed in the sandwich structure. Consequently, the coupled Néel domain wall of the sandwich structure is able to move faster as compared to individual domain walls in a single PMA nanowire.
Domain-wall oscillations studies by time-resolved soft x-ray mircorscopy
Bocklage, L.; Kruger, B.; Eiselt, R.; Bolte, M.; Fischer, P.; Meier, G.
2009-03-25
Fast magnetization dynamics in the micro- and nanometer regime are an interesting field of research. On these length scales magnetic structures can be designed to contain a single vortex or a single domain wall. Both size and speed of these patterns are of great interest in todays research for prospective non-volatile data storage devices. Especially the possibility to move domain-walls by spin-polarized current gained a lot of interest. Magnetic configurations can be imaged by soft X-ray magnetic microscopy with a spatial resolution down to 15 nm. By a stroboscopic pump and probe measurement scheme a temporal resolution below 100 ps is achieved. This provides the opportunity to directly image changes in magnetic domains and domain-wall motion. We image oscillations of a single domain wall in a confining potential in time steps of 200 ps by time resolved X-ray microscopy at the full-field soft X-ray transmission microscope at the Advanced Light Source in Berkeley (beamline 6.1.2). Domain walls are prepared in permalloy nanostructures with a restoring potential. The oscillation of a 180{sup o} domain wall is triggered by nanosecond current pulses. The spin-polarized current and the accompanying Oersted field can contribute to the motion of the wall. By analysis of the distinct domain-wall dynamics the dominant contribution is determined. In our geometry the motion of the wall is determined by the Oersted field although the spin-polarized current directly flows through the ferromagnetic structure. An analytical model of a rigid particle precisely describes the domain-wall motion. Oscillations are studied for different pulse length and amplitudes. From the observed oscillations we extract the driving force, the confining potential, and the domain-wall mass. Nonharmonic terms determine the motion of the wall. The influence of the nonharmonic potential is studied by looking at various phase spaces of the domain-wall motion.
NASA Astrophysics Data System (ADS)
Cao, Wenwu
1987-09-01
Perovskite compounds, ABX(,3), have been studied both experimentally and theoretically above and below the cubic-tetragonal improper ferroelastic phase transition. The second order elastic constants of Potassium Manganese Fluoride KMnF(,3) were measured as function of temperature in the cubic prototype phase. Along 100 and 110 the two longitudinal modes were measured from 190 K to 430 K, and the two independent transverse modes from 190 K to 350 K. Strong anomalies were observed near the phase transition (T(,c) = 186 K). The three independent pressure derivatives of the elastic constants were measured from 200 K to 400 K and also show anomalous behavior near T(,c). By means of second harmonic generation, the nonlinearity parameter was measured in 100 , 110 and 111 from 298 K to 348 K. In this temperature range, all six independent third order elastic constants have been determined. Above 320 K the second and third order elastic constants show linear temperature dependence. The values pertaining to the static crystal were obtained by linear extrapolation to T = 0 from the high temperature region where the effect of the phase transition has subsided. A Landau-Ginzburg continuum model for the interphase boundaries in the heterotype phase has been developed. It includes nonlinear local terms and nonlocal gradient terms for the three-component primary order parameter (the rotation angles of the BX(,6) octahedra). By means of group theoretical methods, the gradient coefficients have been expressed in terms of the nonlinear dispersion of the soft phonon mode near the R-point. Analytic and numerical kink-type soliton solutions for both antiphase and twin boundaries were obtained. According to this model, the symmetry in the center of the twin boundary should be trigonal (rather than cubic, as for a proper ferroelastic). Numerical application to Strontium Titanate, SrTiO(,3), shows that at T = 0 the domain wall thickness is 12 (ANGSTROM), and the domain wall energy density
Nonstationary current-driven dynamics of vortex domain walls in films with in-plane anisotropy
NASA Astrophysics Data System (ADS)
Dubovik, M. N.; Filippov, B. N.; Korzunin, L. G.
2017-02-01
Micromagnetic simulation of a current-driven vortex domain wall motion in a film with in-plane anisotropy was carried out. The current density values j >jc were considered corresponding to the nonstationary motion, with the domain wall structure dynamic transformation occurred. A nonlinear dependence of the jc value on the film thickness was obtained. The nonstationary motion regime existence restricted the possibility to increase the domain wall velocity by increasing j and decreasing the damping parameter.
Khatua, Dipak Kumar; V., Lalitha K.; Fancher, Chris M.; ...
2016-10-18
High energy synchrotron X-ray diffraction, in situ with electric field, was carried out on the morphotropic phase boundary composition of the piezoelectric alloy PbTiO3-BiScO3. We demonstrate a strong correlation between ferroelectric-ferroelastic domain reorientation, lattice strain and phase transformation. Lastly, we also show the occurrence of the three phenomena and persistence of their correlation in the weak field regime.
Normal modes of magnetic domain wall motion in a confined stripe domain lattice
Spreen, J.H.; Argyle, B.E.
1982-06-01
We report the observation of standing wave modes in an array of stripe domains confined by a pair of parallel cracks in a Gd, Ga:YIG film. These modes appear in the response spectrum of the confined lattice as shallow minima or maxima at frequencies lower than that of the usual domain wall resonance peak. A simple model, analogous to the forced response of a membrane clamped at the edges, fits the spatial patterns of wall motion observed at the frequencies of the maxima and minima. Experimental frequency-wave vector values, interpreted with guidance from this analogy, provide the first experimental dispersion curve for a stripe domain lattice. We compare this result with recent theoretical calculations. The experimental value of the uniform mode frequency is 41.5 +- 0.2 MHz, with a long wavelength group velocity of 330 +- 50 m/sec. A surprising conclusion from the observed extrema of the spatial patterns is that the damping of the waves is an order of magnitude less than expected from the damping of the uniform mode. The estimated decay length for a propagating wave is 400 ..mu...
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Braden, Jonathan; Bond, J. Richard; Mersini-Houghton, Laura
2015-08-26
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Braden, Jonathan; Bond, J. Richard; Mersini-Houghton, Laura E-mail: bond@cita.utoronto.ca
2015-08-01
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Vogel, J; Bonfim, M; Rougemaille, N; Boulle, O; Miron, I M; Auffret, S; Rodmacq, B; Gaudin, G; Cezar, J C; Sirotti, F; Pizzini, S
2012-06-15
Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO(x)) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low "mass" of these domain walls is attributed to the combination of their narrow width and high damping parameter α. Such a small inertia should allow accurate control of domain wall motion by tuning the duration and amplitude of the current pulses.
Phase field simulation of domain switching dynamics in multiaxial lead zirconate titanate thin films
NASA Astrophysics Data System (ADS)
Britson, Jason
The defining characteristic of ferroelectric materials is their ability to be switched between energetically equivalent polarization states. This behavior has led to an interest in ferroelectrics for a wide range of bulk and thin film applications such as mechanical actuators and ferroelectric random access memory devices. Ferroelectric switching depends on domain wall motion, however, and is critically influenced by the existence of defects such as dislocations and preexisting domains. Domain wall motion in thin film applications can be controlled by individual local defects due to the reduced length scale of the system. This dissertation describes the impact of preexisting ferroelastic domains and misfits dislocations in coherent (001)-oriented Pb(Zr0.2,Ti0.8)O3 (PZT) thin films on the switching response and domain structure. A phase field model based on the Landau-Ginzburg-Devonshire theory that accounts for the electrostatic and mechanical interactions is used to describe domain structures in ferroelectric PZT thin films. To solve the governing equations a semi-implicit Fourier-Spectral scheme is developed that accommodates boundary conditions appropriate to the thin film geometry. Errors are reduced in the solutions at the film edges through extensions to the model developed to correct the Fourier transform around stationary discontinuities at the thin film edges. This correction is shown to result in increased accuracy of the phase field model needed to appropriately describe dynamic switching responses in the thin film. Investigation of switching around preexisting ferroelastic domains showed these defects are strong obstacles to switching in PZT thin films. Directly above the ferroelastic domain the magnitude of the required nucleation bias underneath a tip-like electrode was found to be elevated compared to the required bias far from the domain. Locally both the piezoelectric and dielectric responses of the thin film were found to be suppressed, which is
Persistent conductive footprints of 109° domain walls in bismuth ferrite films
Stolichnov, I.; Iwanowska, M.; Colla, E.; Setter, N.; Ziegler, B.; Gaponenko, I.; Paruch, P.; Huijben, M.; Rijnders, G.
2014-03-31
Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109° domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall “footprints” is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization.
Time-resolved imaging of current-induced domain-wall oscillations
Bocklage, Lars; Krueger, Benjamin; Eiselt, Rene; Bolte, Markus; Fischer, Peter; Meier, Guido
2008-10-07
Current-induced domain-wall dynamics is investigated via high-resolution soft x-ray transmission microscopy by a stroboscopic pump-and-probe measurement scheme at a temporal resolution of 200 ps. A 180{sup o} domain wall in a restoring potential of a permalloy microstructure is displaced from its equilibrium position by nanosecond current pulses leading to oscillations with velocities up to 325 m/s. The motion of the wall is described with an analytical model of a rigid domain wall in a nonharmonic potential allowing one to determine the mass of the domain wall. We show that Oersted fields dominate the domain-wall dynamics in our geometry.
The increase of the spin-transfer torque threshold current density in coupled vortex domain walls.
Lepadatu, S; Mihai, A P; Claydon, J S; Maccherozzi, F; Dhesi, S S; Kinane, C J; Langridge, S; Marrows, C H
2012-01-18
We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.
Latent heat in uniaxially stressed KMnF3 ferroelastic crystal
NASA Astrophysics Data System (ADS)
Romero, F. J.; Gallardo, M. C.; Jimenez, J.; del Cerro, J.; Salje, E. K. H.
2000-05-01
The influence of weak uniaxial stress on both the latent heat and the coexistence interval of the ferroelastic phase transition of KMnF3 has been measured using a sensitive conduction calorimeter. The latent heat of the sample without stress is 0.129 J g-1 and, in the range of \\mbox{0-12} bar, it increases weakly with the stress. The width of the interval where the latent heat appears increases with stress, with an apparently larger coexistence interval. Heating and cooling processes show different kinetic behaviours. On cooling, the maximum of the differential thermal analysis traces splits into two peaks when a uniaxial stress is applied, which is related to the formation of ferroelastic domain patterns.
Morozov, Maxim I. Einarsrud, Mari-Ann; Tolchard, Julian R.; Grande, Tor; Geiger, Philipp T.; Webber, Kyle G.; Damjanovic, Dragan
2015-10-28
Despite the technological importance of hard and soft PZT, Pb(Zr,Ti)O{sub 3}, ceramics, the mechanisms of ferroelectric hardening and softening remain widely discussed in the literature. The hardening and softening phenomena have traditionally been investigated in relation with dielectric manifestations such as aging of the dielectric susceptibility and constriction of the polarization-electric field hysteresis loop. Here, we present a systematic investigation of the ferroelectric and ferroelastic properties of soft and hard PZT in both the tetragonal and rhombohedral phases. A particular focus has been devoted to ferroelastic domain switching by characterizing the macroscopic mechanical constitutive behavior and in-situ synchrotron X-ray diffraction during compression. It is demonstrated that variation of the ordering state of point defects in PZT ceramics affects the switching behavior of both ferroelectric and ferroelastic domains under mechanical or electrical fields. Softening of the mechanical and electrical properties of originally hard PZT ceramics was conferred by quenching the materials from above the Curie temperature. The present findings are discussed with respect to the current understanding of hardening-softening transitions in ferroelectric materials.
Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy.
Franken, J H; Swagten, H J M; Koopmans, B
2012-08-01
The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation. The domain walls are defined between domains with an out-of-plane (perpendicular) magnetization, which allows us to route domain walls along arbitrary in-plane paths using a time-varying applied magnetic field with fixed orientation. In addition, this ratchet-like motion causes the domain walls to lock to discrete positions along these paths, which is useful for digital devices. As a proof-of-principle experiment we demonstrate the continuous propagation of two domain walls along a closed-loop path in a platinum/cobalt/platinum strip.
Effect of curvature on domain wall motion in elliptical nanorings
NASA Astrophysics Data System (ADS)
Kaya, Fikriye Idil; Bickel, Jessica; Aidala, Katherine
2014-03-01
Understanding domain wall (DW) motion in ferromagnetic nanostructures is important to realize proposed magnetic data storage and logic devices. We investigate the effect of curvature on DW pinning and motion by studying elliptical rings using micromagnetic simulations. Elliptical rings with constant width have varying curvature, with the lowest curvature at the minor axis, and the greatest curvature at the major axis. DWs can be created at any angular position within the ellipse by the application of an appropriate uniform magnetic field. However, only some of these positions are stable when the field is removed. We study the stability and depinning of the DWs by applying a slowly increasing elliptical magnetic field to determine the magnitude of the field at which the DWs begin to move. By varying the major to minor axis ratio, we examine the effect of curvature on DW pinning. A larger field is required to move DWs in regions of higher curvature (near the major axis) than lower curvature (near the minor axis). Overall, we see that increasing the major to minor axis ratio of elliptical nanorings requires increasing field strength to depin the DWs along the major axis. Work supported in part by NSF DMR-1207924 and NSF CMMI-1025020. Simulations performed at the CNS computational facilities at Harvard University, a member of the NNIN supported by NSF Award No. ECS-0335765.
Magnetic bead detection using domain wall-based nanosensor
Corte-León, H.; Krzysteczko, P.; Schumacher, H. W.; Manzin, A.; Cox, D.; Antonov, V.; Kazakova, O.
2015-05-07
We investigate the effect of a single magnetic bead (MB) on the domain wall (DW) pinning/depinning fields of a DW trapped at the corner of an L-shaped magnetic nanodevice. DW propagation across the device is investigated using magnetoresistance measurements. DW pinning/depinning fields are characterized in as-prepared devices and after placement of a 1 μm-sized MB (Dynabeads{sup ®} MyOne{sup ™}) at the corner. The effect of the MB on the DW dynamics is seen as an increase in the depinning field for specific orientations of the device with respect to the external magnetic field. The shift of the depinning field, ΔB{sub dep} = 4.5–27.0 mT, is highly stable and reproducible, being significantly above the stochastic deviation which is about 0.5 mT. The shift in the deppinning field is inversely proportional to the device width and larger for small negative angles between the device and the external magnetic field. Thus, we demonstrate that DW-based devices can be successfully used for detection of single micron size MB.
Domain walls and bubble droplets in immiscible binary Bose gases
NASA Astrophysics Data System (ADS)
Filatrella, G.; Malomed, Boris A.; Salerno, Mario
2014-10-01
The existence and stability of domain walls (DWs) and bubble-droplet (BD) states in binary mixtures of quasi-one-dimensional ultracold Bose gases with inter- and intraspecies repulsive interactions is considered. Previously, DWs were studied by means of coupled systems of Gross-Pitaevskii equations (GPEs) with cubic terms, which model immiscible binary Bose-Einstein condensates (BECs). We address immiscible BECs with two- and three-body repulsive interactions, as well as binary Tonks-Girardeau (TG) gases, using systems of GPEs with cubic and quintic nonlinearities for the binary BEC, and coupled nonlinear Schrödinger equations with quintic terms for the TG gases. Exact DW solutions are found for the symmetric BEC mixture, with equal intraspecies scattering lengths. Stable asymmetric DWs in the BEC mixtures with dissimilar interactions in the two components, as well as of symmetric and asymmetric DWs in the binary TG gas, are found by means of numerical and approximate analytical methods. In the BEC system, DWs can be easily put in motion by phase imprinting. Combining a DW and anti-DW on a ring, we construct BD states for both the BEC and TG models. These consist of a dark soliton in one component (the "bubble"), and a bright soliton (the "droplet") in the other. In the BEC system, these composite states are mobile, too.
Depinning of domain walls in permalloy nanowires with asymmetric notches
Gao, Y.; You, B.; Ruan, X. Z.; Liu, M. Y.; Yang, H. L.; Zhan, Q. F.; Li, Z.; Lei, N.; Zhao, W. S.; Pan, D. F.; Wan, J. G.; Wu, J.; Tu, H. Q.; Wang, J.; Zhang, W.; Xu, Y. B.; Du, J.
2016-01-01
Effective control of the domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental research and potential application in spintronic devices. In this work, a series of permalloy nanowires with an asymmetric notch in the middle were fabricated with only varying the width (d) of the right arm from 200 nm to 1000 nm. The detailed pinning and depinning processes of DWs in these nanowires have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, magnetic force microscopy (MFM) and micromagnetic simulation. The experimental results unambiguously exhibit the presence of a DW pinned at the notch in a typical sample with d equal to 500 nm. At a certain range of 200 nm < d < 500 nm, both the experimental and simulated results show that the DW can maintain or change its chirality randomly during passing through the notch, resulting in two DW depinning fields. Those two depinning fields have opposite d dependences, which may be originated from different potential well/barrier generated by the asymmetric notch with varying d. PMID:27600627
Evidence of domain wall pinning in aluminum substituted cobalt ferrites
NASA Astrophysics Data System (ADS)
Maurya, J. C.; Janrao, P. S.; Datar, A. A.; Kanhe, N. S.; Bhoraskar, S. V.; Mathe, V. L.
2016-08-01
In the present work spinel structured cobalt ferrites with aluminum substitution having composition CoAlxFe2-xO4 (x=0.0, 0.1, 0.2 and 0.3) have been synthesized using chemical co-precipitation method. Their microstructural, magnetic, magnetostriction and magnetoimpedance properties have been investigated. The piezomagnetic coefficient (dλ/dH) obtained from magnetostriction data is found to enhance with 0.1 Al substitutions in place of iron which decreases with further increase of Al content. It is noticed that 0.3 Al substitutions in place of Fe introduces domain wall pinning as evidenced from magnetostriction, magnetoimpedance and dc magnetization data. It is noted that ferrites so prepared using a simple procedure are magnetostrictive in good measure and with the addition of very small amount of non-magnetic aluminum their magnetostriction has shown saturation at relatively low magnetic fields. Such magnetostrictive ferrites find their applications in magnetic sensors and actuators.
Depinning of domain walls in permalloy nanowires with asymmetric notches
NASA Astrophysics Data System (ADS)
Gao, Y.; You, B.; Ruan, X. Z.; Liu, M. Y.; Yang, H. L.; Zhan, Q. F.; Li, Z.; Lei, N.; Zhao, W. S.; Pan, D. F.; Wan, J. G.; Wu, J.; Tu, H. Q.; Wang, J.; Zhang, W.; Xu, Y. B.; Du, J.
2016-09-01
Effective control of the domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental research and potential application in spintronic devices. In this work, a series of permalloy nanowires with an asymmetric notch in the middle were fabricated with only varying the width (d) of the right arm from 200 nm to 1000 nm. The detailed pinning and depinning processes of DWs in these nanowires have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, magnetic force microscopy (MFM) and micromagnetic simulation. The experimental results unambiguously exhibit the presence of a DW pinned at the notch in a typical sample with d equal to 500 nm. At a certain range of 200 nm < d < 500 nm, both the experimental and simulated results show that the DW can maintain or change its chirality randomly during passing through the notch, resulting in two DW depinning fields. Those two depinning fields have opposite d dependences, which may be originated from different potential well/barrier generated by the asymmetric notch with varying d.
Current-driven vortex domain wall motion in wire-tube nanostructures
Espejo, A. P.; Vidal-Silva, N.; López-López, J. A.; Goerlitz, D.; Nielsch, K.; Escrig, J.
2015-03-30
We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.
Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque
Bhowmik, Debanjan; Nowakowski, Mark E.; You, Long; Lee, OukJae; Keating, David; Wong, Mark; Bokor, Jeffrey; Salahuddin, Sayeef
2015-01-01
Spin-polarized electrons can move a ferromagnetic domain wall through the transfer of spin angular momentum when current flows in a magnetic nanowire. Such current induced control of a domain wall is of significant interest due to its potential application for low power ultra high-density data storage. In previous reports, it has been observed that the motion of the domain wall always happens parallel to the current flow – either in the same or opposite direction depending on the specific nature of the interaction. In contrast, here we demonstrate deterministic control of a ferromagnetic domain wall orthogonal to current flow by exploiting the spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO heterostructure in presence of an in-plane magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Therefore the domain wall motion happens purely due to spin orbit torque. These results represent a completely new degree of freedom in current induced control of a ferromagnetic domain wall. PMID:26139349
Spin-wave-driven high-speed domain-wall motions in soft magnetic nanotubes
Yang, Jaehak; Yoo, Myoung-Woo; Kim, Sang-Koog
2015-10-28
We report on a micromagnetic simulation study of interactions between propagating spin waves and a head-to-head domain wall in geometrically confined magnetic nanotubes. We found that incident spin waves of specific frequencies can lead to sufficiently high-speed (on the order of a few hundreds of m/s or higher) domain-wall motions in the same direction as that of the incident spin-waves. The domain-wall motions and their speed vary remarkably with the frequency and the amplitude of the incident spin-waves. High-speed domain-wall motions originate from the transfer torque of spin waves' linear momentum to the domain wall, through the partial or complete reflection of the incident spin waves from the domain wall. This work provides a fundamental understanding of the interaction of the spin waves with a domain wall in the magnetic nanotubes as well as a route to all-magnetic control of domain-wall motions in the magnetic nanoelements.
Lequeux, Steven; Sampaio, Joao; Bortolotti, Paolo; Cros, Vincent; Grollier, Julie; Matsumoto, Rie; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Tsunekawa, Koji
2015-11-02
Spin torque resonance has been used to simultaneously probe the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Due to the large associated resistance variations, we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both the domains and the domain wall is doubled compared to the damping value of the host magnetic layer. We estimate the contributions to the damping arising from the dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect, and find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls.
Murein and pseudomurein cell wall binding domains of bacteria and archaea--a comparative view.
Visweswaran, Ganesh Ram R; Dijkstra, Bauke W; Kok, Jan
2011-12-01
The cell wall, a major barrier protecting cells from their environment, is an essential compartment of both bacteria and archaea. It protects the organism from internal turgor pressure and gives a defined shape to the cell. The cell wall serves also as an anchoring surface for various proteins and acts as an adhesion platform for bacteriophages. The walls of bacteria and archaea are mostly composed of murein and pseudomurein, respectively. Cell wall binding domains play a crucial role in the non-covalent attachment of proteins to cell walls. Here, we give an overview of the similarities and differences in the biochemical and functional properties of the two major murein and pseudomurein cell wall binding domains, i.e., the Lysin Motif (LysM) domain (Pfam PF01476) and the pseudomurein binding (PMB) domain (Pfam PF09373) of bacteria and archaea, respectively.
Athermal domain-wall creep near a ferroelectric quantum critical point
NASA Astrophysics Data System (ADS)
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-02-01
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point.
Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes
Muñoz, Manuel; Prieto, José L.
2011-01-01
Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6–2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes. PMID:22127058
Interaction of magnetization and heat dynamics for pulsed domain wall movement with Joule heating
NASA Astrophysics Data System (ADS)
Lepadatu, Serban
2016-10-01
Pulsed domain wall movement is studied here in Ni80Fe20 nanowires on SiO2, using a fully integrated electrostatic, thermoelectric, and micromagnetics solver based on the Landau-Lifshitz-Bloch equation, including Joule heating, anisotropic magneto-resistance, and Oersted field contributions. During the applied pulse, the anisotropic magneto-resistance of the domain wall generates a dynamic heat gradient, which increases the current-driven velocity by up to 15%. Using a temperature-dependent conductivity, significant differences are found between the constant voltage-pulsed and constant current-pulsed domain wall movement: constant voltage pulses are shown to be more efficient at displacing domain walls whilst minimizing the increase in temperature, with the total domain wall displacement achieved over a fixed pulse duration having a maximum with respect to the driving pulse strength.
Athermal domain-wall creep near a ferroelectric quantum critical point
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-01-01
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point. PMID:26880041
NASA Astrophysics Data System (ADS)
Elder, K. R.; Achim, C. V.; Granato, E.; Ying, S. C.; Ala-Nissila, T.
2016-12-01
We introduce an effective one-mode phase-field crystal model for studying the commensurate-incommensurate transition and domain wall dynamics of the (\\sqrt{3}×\\sqrt{3})R30\\circ phase found in systems such as Xe/Pt(111), or Xe and Kr on graphite. The model allows us to study large systems where the domain walls can be separated over large macroscopic distances and at the same time incorporate the microscopic details of the domain wall structures. The resulting phase diagram shows that an intermediate stripe incommensurate phase always separates the commensurate phase from the honeycomb incommensurate phases. The energy of the domain wall crossing is investigated. We also find that near a step edge, the domain walls tend to align perpendicularly to the step edge, in agreement with recent experimental observations.
Domain walls and their experimental signatures in s+is superconductors.
Garaud, Julien; Babaev, Egor
2014-01-10
Arguments were recently advanced that hole-doped Ba(1-x)K(x)Fe2As2 exhibits the s+is state at certain doping. Spontaneous breaking of time-reversal symmetry in the s+is state dictates that it possess domain wall excitations. Here, we discuss what are the experimentally detectable signatures of domain walls in the s+is state. We find that in this state the domain walls can have a dipolelike magnetic signature (in contrast to the uniform magnetic signature of domain walls p+ip superconductors). We propose experiments where quench-induced domain walls can be stabilized by geometric barriers and observed via their magnetic signature or their influence on the magnetization process, thereby providing an experimental tool to confirm the s+is state.
Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes.
Muñoz, Manuel; Prieto, José L
2011-11-29
Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6-2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes.
Athermal domain-wall creep near a ferroelectric quantum critical point.
Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori
2016-02-16
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point.
Pinning induced by inter-domain wall interactions in planar magnetic nanowires
Hayward, T.J.; Bryan, M.T.; Fry, P.W.; Fundi, P.M.; Gibbs, M.R.J.; Allwood, D.A.; Im, M.-Y.; Fischer, P.
2009-10-30
We have investigated pinning potentials created by inter-domain wall magnetostatic interactions in planar magnetic nanowires. We show that these potentials can take the form of an energy barrier or an energy well depending on the walls' relative monopole moments, and that the applied magnetic fields required to overcome these potentials are significant. Both transverse and vortex wall pairs are investigated and it is found that transverse walls interact more strongly due to dipolar coupling between their magnetization structures. Simple analytical models which allow the effects of inter-domain wall interactions to be estimated are also presented.
Domain walls in the (Ga,Mn)as diluted magnetic semiconductor.
Sugawara, Akira; Kasai, H; Tonomura, A; Brown, P D; Campion, R P; Edmonds, K W; Gallagher, B L; Zemen, J; Jungwirth, T
2008-02-01
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 to 120 nm. The domain walls are of the Néel type and evolve from near-90 degrees walls at low temperatures to large angle [11[over ]0]-oriented walls and small angle [110]-oriented walls at higher temperatures.
One-dimensional domain walls in thin ferromagnetic films with fourfold anisotropy
NASA Astrophysics Data System (ADS)
Lund, Ross G.; Muratov, Cyrill B.
2016-06-01
We study the properties of domain walls and domain patterns in ultrathin epitaxial magnetic films with two orthogonal in-plane easy axes, which we call fourfold materials. In these materials, the magnetization vector is constrained to lie entirely in the film plane and has four preferred directions dictated by the easy axes. We prove the existence of {{90}\\circ} and {{180}\\circ} domain walls in these materials as minimizers of a nonlocal one-dimensional energy functional. Further, we investigate numerically the role of the considered domain wall solutions for pattern formation in a rectangular sample.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-01-01
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors. PMID:28216672
Exotic domain walls in Bose-Einstein condensates with double-well dispersion
NASA Astrophysics Data System (ADS)
Liu, Tongtong; Clark, Logan W.; Chin, Cheng
2016-12-01
We study the domain walls which form when Bose condensates acquire a double-well dispersion. Experiments have observed such domain walls in condensates driven across a Z2 symmetry-breaking phase transition in a shaken optical lattice. We derive a generic model to describe the dispersion and to compute the wave functions and energies of the domain walls. We find two distinct regimes which demand different physical pictures. In the weak-coupling regime, where interactions are weak compared to the kinetic-energy barrier, "density-wave domain walls" form that support an extended density wave and a series of phase steps. These features can be understood as the quantum interference between domains with distinct momenta. In the strong-coupling regime where interaction dominates, the system forms "phase domain walls" which have the minimum width allowed by the uncertainty principle and suppressed density modulation. Analytic results for the domain-wall wave functions are obtained in the two regimes. The energy of domain walls behaves similarly to that of topological defects in paradigmatic field theories.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3.
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-02-20
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.
Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3
NASA Astrophysics Data System (ADS)
Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin
2017-02-01
Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.
Kim, June-Seo; Mawass, Mohamad-Assaad; Bisig, André; Krüger, Benjamin; Reeve, Robert M; Schulz, Tomek; Büttner, Felix; Yoon, Jungbum; You, Chun-Yeol; Weigand, Markus; Stoll, Hermann; Schütz, Gisela; Swagten, Henk J M; Koopmans, Bert; Eisebitt, Stefan; Kläui, Mathias
2014-03-24
Magnetic storage and logic devices based on magnetic domain wall motion rely on the precise and synchronous displacement of multiple domain walls. The conventional approach using magnetic fields does not allow for the synchronous motion of multiple domains. As an alternative method, synchronous current-induced domain wall motion was studied, but the required high-current densities prevent widespread use in devices. Here we demonstrate a radically different approach: we use out-of-plane magnetic field pulses to move in-plane domains, thus combining field-induced magnetization dynamics with the ability to move neighbouring domain walls in the same direction. Micromagnetic simulations suggest that synchronous permanent displacement of multiple magnetic walls can be achieved by using transverse domain walls with identical chirality combined with regular pinning sites and an asymmetric pulse. By performing scanning transmission X-ray microscopy, we are able to experimentally demonstrate in-plane magnetized domain wall motion due to out-of-plane magnetic field pulses.
Domain walls and vortices in linearly coupled systems
Dror, Nir; Malomed, Boris A.; Zeng Jianhua
2011-10-15
We investigate one- and two-dimensional radial domain-wall (DW) states in the system of two nonlinear-Schroedinger (NLS) or Gross-Pitaevskii (GP) equations, which are couple by linear mixing and by nonlinear XPM (cross-phase-modulation). The system has straightforward applications to two-component Bose-Einstein condensates, and to bimodal light propagation in nonlinear optics. In the former case the two components represent different hyperfine atomic states, while in the latter setting they correspond to orthogonal polarizations of light. Conditions guaranteeing the stability of flat continuous wave (CW) asymmetric bimodal states are established, followed by the study of families of the corresponding DW patterns. Approximate analytical solutions for the DWs are found near the point of the symmetry-breaking bifurcation of the CW states. An exact DW solution is produced for ratio 3:1 of the XPM and SPM (self-phase modulation) coefficients. The DWs between flat asymmetric states, which are mirror images of each other, are completely stable, and all other species of the DWs, with zero crossings in one or two components, are fully unstable. Interactions between two DWs are considered too, and an effective potential accounting for the attraction between them is derived analytically. Direct simulations demonstrate merger and annihilation of the interacting DWs. The analysis is extended for the system including single- and double-peak external potentials. Generic solutions for trapped DWs are obtained in a numerical form, and their stability is investigated. An exact stable solution is found for the DW trapped by a single-peak potential. In the 2D geometry, stable two-component vortices are found, with topological charges s=1,2,3. Radial oscillations of annular DW-shaped pulsons, with s=0,1,2, are studied too. A linear relation between the period of the oscillations and the mean radius of the DW ring is derived analytically.
How to move domain walls in an antiferromagnet
NASA Astrophysics Data System (ADS)
Kim, Se Kwon
Domain walls (DWs) in an easy-axis antiferromagnet can be driven by several stimuli: a charge current (in conducting antiferromagnets), a magnon current, and a temperature gradient. In this talk, we discuss the dynamics of a DW induced by two latter external perturbations, which are applicable in both metallic and insulating antiferromagnets. First of all, we study the Brownian dynamics of a DW subjected to a temperature gradient. To this end, we derive the Langevin equation for the DW's center of mass with the aid of the fluctuation-dissipation theorem. A DW behaves as a classical massive particle immersed in a viscous medium. By considering a thermodynamic ensemble of DWs, we obtain the Fokker-Planck equation, from which we extract the average drift velocity of a DW. We briefly address other mechanisms of thermally driven DW motion. Secondly, we analyze the dynamics of a DW driven by circularly polarized magnons. Magnons passing through a DW reverse their spin upon transmission, thereby transferring two quanta of angular momentum to the DW and causing it to precess. A precessing DW partially reflects magnons back to the source. The reflection of magnons creates a previously identified reactive force. We point out a second mechanism of propulsion of the DW, which we term redshift: magnons passing through a precessing DW reduce their linear momentum and transfer the decrease to the DW. We solve the equations of motion for magnons in the background of a uniformly precessing DW with the aid of supersymmetric quantum mechanics and compute the net force and torque applied by magnons to the DW. The theory agrees well with micromagnetic simulations. This work has been supported in part by the ARO, the U.S. DOE-BES, and the U.S. NSF grants.
Domain walls and vortices in linearly coupled systems.
Dror, Nir; Malomed, Boris A; Zeng, Jianhua
2011-10-01
We investigate one- and two-dimensional radial domain-wall (DW) states in the system of two nonlinear-Schrödinger (NLS) or Gross-Pitaevskii (GP) equations, which are couple by linear mixing and by nonlinear XPM (cross-phase-modulation). The system has straightforward applications to two-component Bose-Einstein condensates, and to bimodal light propagation in nonlinear optics. In the former case the two components represent different hyperfine atomic states, while in the latter setting they correspond to orthogonal polarizations of light. Conditions guaranteeing the stability of flat continuous wave (CW) asymmetric bimodal states are established, followed by the study of families of the corresponding DW patterns. Approximate analytical solutions for the DWs are found near the point of the symmetry-breaking bifurcation of the CW states. An exact DW solution is produced for ratio 3:1 of the XPM and SPM (self-phase modulation) coefficients. The DWs between flat asymmetric states, which are mirror images of each other, are completely stable, and all other species of the DWs, with zero crossings in one or two components, are fully unstable. Interactions between two DWs are considered too, and an effective potential accounting for the attraction between them is derived analytically. Direct simulations demonstrate merger and annihilation of the interacting DWs. The analysis is extended for the system including single- and double-peak external potentials. Generic solutions for trapped DWs are obtained in a numerical form, and their stability is investigated. An exact stable solution is found for the DW trapped by a single-peak potential. In the 2D geometry, stable two-component vortices are found, with topological charges s=1,2,3. Radial oscillations of annular DW-shaped pulsons, with s=0,1,2, are studied too. A linear relation between the period of the oscillations and the mean radius of the DW ring is derived analytically.
Interaction of ultrasonic waves with domain walls on nanocrystalline YIG.
Murthy, S R
2014-02-01
The nanocrystalline YIG samples with different particle sizes (20-40 nm) has been prepared using microwave-hydrothermal method. As synthesized powders were characterized using XRD and TEM. The powders were pressed and sintered at three different temperatures i.e., 700 °C/30 min, 800 °C/30 min, 900 °C/30 min, using microwave furnace. The sintered samples were characterized using XRD and TEM. The sintered samples are monophasic in nature with average grain size ranging in between 72 nm and 90 nm. The thermal variation of ultrasonic velocities [longitudinal (V(l)) and transverse (V(S))] and longitudinal attenuation (α(l)) has been measured on sintered samples by the pulse transmissionmethod at 1 MHz, in the temperature range of 300-600 K. The room temperature velocity is found to be grain size dependent and decreases with increasing temperature, except near the Curie temperature, T(C), where a small anomaly is observed. The longitudinal attenuation (α(1)) at room temperature is also found to be more sample dependent. The temperature variation of ultrasonic longitudinal attenuation exhibits a sharp maximum just below Curie temperature (T(C)). The above observations were carried on in the demagnetized state, on the application of a saturation field of 380 mT, the anomaly observed in the thermal variation of velocities (longitudinal and transverse) and attenuation is found to disappears. The observed interaction of ultrasonic velocity with domain walls has been qualitatively explained with the help oftemperature variation of magneto-crystalline anisotropy constant (k(1)) and Landau's theory.
Scanning of magnetic space groups and the analysis of non-magnetic domain walls.
Janovec, V; Litvin, D B
2007-09-01
Similarly to atomic positions in a crystal being fixed, or at least constrained by the space group of that crystal, the displacements of atoms in a domain wall are determined or constrained by the symmetry of the wall given by the sectional layer group of the corresponding domain pair. The sectional layer group can be interpreted as comprised of operations that leave invariant a plane transecting two overlapping structures, the domain states of the two domains adhering to the domain wall. The procedure of determining the sectional layer groups for all orientations and positions of a transecting plane is called scanning of the space group. Scanning of non-magnetic space groups has been described and tabulated. It is shown here that the scanning of magnetic groups can be determined from that of non-magnetic groups. The information provided by scanning of magnetic space groups can be utilized in the symmetry analysis of domain walls in non-magnetic crystals since, for any dichromatic space group, which expresses the symmetry of overlapped structures of two non-magnetic domains, there exists an isomorphic magnetic space group. Consequently, a sectional layer group of a magnetic space group expresses the symmetry of a non-magnetic domain wall. Examples of this are given in the symmetry analysis of ferroelectric domain walls in non-magnetic perovskites.
Pretransformation strain modulations in proper ferroelastics
NASA Astrophysics Data System (ADS)
Saxena, A.; Barsch, G. R.
1993-06-01
Within the framework of the Landau-Ginzburg model for the O h-D 4 h proper ferroelastic transformation pretransformation structural modulations may arise as (possibly defect-stabilized) pseudo-critical fluctuations that can be described by an effective elastic ø 4 model. Here we show that the strain amplitude and temperature dependence of an intermediate tetragonal phase observed above and concurrently with the face-centered cubic to face-centered cubic to face-centered tetragonal transition in Fe 0.7Pd 0.3 can be understood semi-quantitatively in terms of the crossover behavior from the Ising to the displacive limit by applying the crossover phase diagram of Beale, Sarker and Krumhansl (obtained from a renormalization group study of structural phase transitions in 1D and 2D) to the effective ø 4 model. The fact that this type of pretransformation modulation has not been observed with X-rays for other ferroelastic transformations (e.g. InTl alloys) can be attributed to large values of the order parameter gradient coefficient in these cases
Wallace, Thomas K; Colman, Ross H; McLaughlin, Abbie C
2013-06-14
A study of the magnetic and structural properties of the double perovskite Ba2GdMoO6 has been performed. The crystal structure distorts from the ideal cubic (Fm3m) structure to the tetragonal space group I4/m at 220 K, before undergoing a second distortion to a triclinic system (I1) at 80 K. The phase transition to triclinic symmetry is also evident in magnetic susceptibility measurements. The variable temperature synchrotron powder X-ray diffraction results reveal that Ba2GdMoO6 is ferroelastic, with the onset of ferroelastic domain formation occurring at the cubic-tetragonal phase transition. A number of Rietveld refinement techniques for modelling diffuse scattering from ferroelastic domain boundaries have been explored.
NASA Astrophysics Data System (ADS)
Soledade, P. R.; Brandão, J.; Mello, A.; Sampaio, L. C.
2017-02-01
We have investigated the pinning–depinning processes of vortex domain walls (VDW) in Permalloy nanowires with asymmetric triangular notches by means of magnetoresistance measurements and micromagnetic simulations. Through a model based on the anisotropic magnetoresistance (AMR) and the magnetization structure obtained from simulations, the magnetoresistance when the VDW passes stretched through the notch was calculated. Besides the depinning field, as it is known, also the magnetoresistance drop depends on the domain wall chirality. Measurements show that the resistance drop for clockwise (CW) chirality is ≈180 m Ω (38%) larger than for the counterclockwise (CCW) chirality. From the VDW resistance calculations it becomes clear which domain wall parameters, like domain wall structure, chirality and wall width, play a role on the magnetoresistance. These results offer an additional route to better controlling the VDW motion, which can be beneficial to applications.
Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston
NASA Astrophysics Data System (ADS)
Upadhyaya, Pramey; Tserkovnyak, Yaroslav
2016-07-01
We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.
Charge-order domain walls with enhanced conductivity in a layered manganite.
Ma, Eric Yue; Bryant, Benjamin; Tokunaga, Yusuke; Aeppli, Gabriel; Tokura, Yoshinori; Shen, Zhi-Xun
2015-07-03
Interfaces and boundaries in condensed-matter systems often have electronic properties distinct from the bulk material and thus have become a topic of both fundamental scientific interest and technological importance. Here we identify, using microwave impedance microscopy, enhanced conductivity of charge-order domain walls in the layered manganite Pr(Sr0.1Ca0.9)2Mn2O7. We obtain a complete mesoscopic map of surface topography, crystalline orientation and electronic phase, and visualize the thermal phase transition between two charge-ordered phases. In both phases, charge-order domains occur with domain walls showing enhanced conductivity likely due to local lifting of the charge order. Finite element analysis shows that the resolved domain walls can be as narrow as few nanometres. The domain walls are stabilized by structural twins and have a strong history dependence, suggesting that they may be manipulated to create novel devices.
Charge-order domain walls with enhanced conductivity in a layered manganite
Ma, Eric Yue; Bryant, Benjamin; Tokunaga, Yusuke; Aeppli, Gabriel; Tokura, Yoshinori; Shen, Zhi-Xun
2015-01-01
Interfaces and boundaries in condensed-matter systems often have electronic properties distinct from the bulk material and thus have become a topic of both fundamental scientific interest and technological importance. Here we identify, using microwave impedance microscopy, enhanced conductivity of charge-order domain walls in the layered manganite Pr(Sr0.1Ca0.9)2Mn2O7. We obtain a complete mesoscopic map of surface topography, crystalline orientation and electronic phase, and visualize the thermal phase transition between two charge-ordered phases. In both phases, charge-order domains occur with domain walls showing enhanced conductivity likely due to local lifting of the charge order. Finite element analysis shows that the resolved domain walls can be as narrow as few nanometres. The domain walls are stabilized by structural twins and have a strong history dependence, suggesting that they may be manipulated to create novel devices. PMID:26139185
Trützschler, Julia; Sentosun, Kadir; Mozooni, Babak; Mattheis, Roland; McCord, Jeffrey
2016-01-01
High density magnetic domain wall gratings are imprinted in ferromagnetic-antiferromagnetic thin films by local ion irradiation by which alternating head-to-tail-to-head-to-tail and head-to-head-to-tail-to-tail spatially overlapping domain wall networks are formed. Unique magnetic domain processes result from the interaction of anchored domain walls. Non-linear magnetization response is introduced by the laterally distributed magnetic anisotropy phases. The locally varying magnetic charge distribution gives rise to localized and guided magnetization spin-wave modes directly constrained by the narrow domain wall cores. The exchange coupled multiphase material structure leads to unprecedented static and locally modified dynamic magnetic material properties. PMID:27487941
Current-induced domain wall motion in Rashba spin-orbit system
NASA Astrophysics Data System (ADS)
Obata, Katsunori; Tatara, Gen
2008-06-01
Current-induced magnetic domain wall motion, induced by transfer of spin transfer effect due to exchange interaction, is expected to be useful for next generation high-density storages. Here we showed that efficient domain wall manipulation can be achieved by the introduction of Rashba spin-orbit interaction, which induces spin precession of conduction electron and acts as an effective magnetic field. Its effect on domain wall motion depends on the wall configuration. We found that the effect is significant for Bloch wall with the hard axis along the current, since the effective field works as β or fieldlike term and removes the threshold current if in extrinsic pinning is absent. For Néel wall and Bloch wall with easy axis perpendicular to Rashba plane, the effective field induces a step motion of wall corresponding to a rotation of wall plane by the angle of approximately π at current lower than intrinsic threshold. Rashba interaction would therefore be useful to assist efficient motion of domain walls at low current.
Domain wall motion driven by spin Hall effect—Tuning with in-plane magnetic anisotropy
Rushforth, A. W.
2014-04-21
This letter investigates the effects of in-plane magnetic anisotropy on the current induced motion of magnetic domain walls in systems with dominant perpendicular magnetic anisotropy, where accumulated spins from the spin Hall effect in an adjacent heavy metal layer are responsible for driving the domain wall motion. It is found that that the sign and magnitude of the domain wall velocity in the uniform flow regime can be tuned significantly by the in-plane magnetic anisotropy. These effects are sensitive to the ratio of the adiabatic and non-adiabatic spin transfer torque parameters and are robust in the presence of pinning and thermal fluctuations.
Current-driven domain wall depinning from an anisotropy boundary in nanowires.
Gerhardt, T; Drews, A; Meier, G
2014-05-21
The interaction of a current-driven domain wall with an anisotropy boundary in nanowires with perpendicular magnetic anisotropy is investigated. A local reduction of the anisotropy constant is used to create an artificial boundary where the domain wall gets pinned. Micromagnetic simulations and analytical calculations, based on a one-dimensional model, are employed to describe the interaction of the domain wall and the anisotropy boundary and to determine the depinning current densities. Two different pinning regimes-an intrinsic and an extrinsic-can be identified in dependence with the characteristic of the boundary. A very good agreement between simulated and analytically obtained data is achieved.
Selective domain wall depinning by localized Oersted fields and Joule heating
NASA Astrophysics Data System (ADS)
Ilgaz, Dennis; Kläui, Mathias; Heyne, Lutz; Boulle, Olivier; Zinser, Fabian; Krzyk, Stephen; Fonin, Mikhail; Rüdiger, Ulrich; Backes, Dirk; Heyderman, Laura J.
2008-09-01
Using low temperature magnetoresistance measurements, the possibility to selectively move a domain wall locally by applying current pulses through a Au nanowire adjacent to a permalloy element is studied. We find that the domain wall depinning field is drastically modified with increasing current density due to the Joule heating and the Oersted field of the current, and controlled motion due to the Oersted field without any externally applied fields is achieved. By placing the domain wall at various distances from the Au wire, we determine the range of the Joule heating and the Oersted field and both effects can be separated.
Multi-scalar tachyon potential on non-BPS domain walls
NASA Astrophysics Data System (ADS)
Brito, F. A.; Jesuíno, H. S.
2010-07-01
We have considered the multi-scalar and multi-tachyon fields living on a 3d domain wall embedded in a 5d dimensional Minkowski spacetime. The effective action for such a domain wall can be found by integrating out the normal m odes as vibrating modes around the domain wall solution of a truncated 5d supergravity action. The multi-scalar tachyon potential is good enough to modeling assisted inflation scenario with multi-tachyon fields. The tachyon condensation is also briefly addressed.
NASA Astrophysics Data System (ADS)
Ermolaeva, O. L.; Skorokhodov, E. V.; Mironov, V. L.
2016-11-01
This paper presents the results of theoretical and experimental investigations of the domain wall pinning in a planar ferromagnetic system consisting of a nanowire and four rectangular uniformly magnetized nanoparticles located at an angle to the nanowire axis. Based on the calculations of the interaction energy of the domain wall with stray fields of nanoparticles and the micromagnetic simulation, it has been demonstrated that, in this system, there are different variants of the domain wall pinning, which are determined by the relative orientation of the magnetic moments of nanoparticles and the magnetization of the nanowire. The possibility of the creation of magnetic logic cells based on the structures under consideration has been discussed.
Topological electromotive force from domain-wall dynamics in a ferromagnet
Yang, Shengyuan; Beach, Geoffrey S. D.; Knutson, Carl; Xiao, Di; Zhang, Zhenyu; Tsoi, Maxin; Niu, Qian
2010-01-01
We formulate a local gauge-invariant theory for the electromotive force induced by domain-wall dynamics in a ferromagnet. We demonstrate that this emf generation is a real-space topological pumping effect. The integral of the emf over one pumping period is a quantized topological invariant which does not depend on the details of the domain-wall configuration nor on its detailed dynamics. Based on our theory, the full instanta- neous electric potential distribution can be mapped out by standard electrostatic methods. We also provide further details on our recent experiments which confirmed the emf induced by domain-wall dynamics.
Wang, X H; Wang, W Z; Kong, T F; Lew, W S
2011-03-01
We have studied the magnetic switching behavior of permalloy asymmetric rings using micromagnetic simulations. The simulation results have revealed that a domain wall trapping feature is present at the narrow arm of the asymmetric ring. This trapping feature is obtained via precise control of the lateral geometric features, the ring asymmetry and the film thickness. Our results show that the trapped domain walls do not annihilate until the magnetization in the wide arm is reversed under a relatively large magnetic field. Furthermore, the magnetic field strength needed to annihilate the domain wall is found to be decreasing with larger asymmetry ratio.
Ferroelasticity, mechanical behavior, and phase stability of t prime zirconia ceramics
Jue Janfong.
1991-01-01
Large-grained (100-200 {mu}m), yttria doped, polycrystalline t{prime}-zirconia ceramics were fabricated by heating presintered samples at 2100C. Two point four and 3 mol% yttria-doped single crystals obtained from a commercial source were oriented by the Laue back-reflection method and cut along {l angle}100{r angle}, {l angle}110{r angle}, and {l angle}111{r angle} directions. They were also heat treated at 2100C. Ferroelastic domain structure was predicted by group theory and examined by transmission optical microscopy under polarized light and transmission electron microscopy. Orientations of domain boundaries were in accordance with predictions of group theory. X-ray diffraction showed that no monoclinic phase was detected on as-polished, ground, fracture surfaces, and on surfaces under tensile stresses as high as 400 MPa. Relative changes in the tetragonal peak intensities occurred and were attributed to ferroelastic domain switching. Higher toughness of 3 mol% Y{sub 2}O{sub 3} doped t{prime} samples (7.7MPam{sup 1/2}) compared to that of zirconia in the cubic phase (8 mol% Y{sub 2}O{sub 3}, 2.4MPam{sup 1/2}) was attributed in part to ferroelastic domain switching. Polished surfaces of polycrystalline t{prime}-materials showed no mono-clinic phase even after 1,000 hours at 275C in air, whereas conventional Y-TZP ceramics of a grain size larger than 0.5 {mu}m showed substantial transformation.
Domain wall spin structures in mesoscopic Fe rings probed by high resolution SEMPA
NASA Astrophysics Data System (ADS)
Krautscheid, Pascal; Reeve, Robert M.; Lauf, Maike; Krüger, Benjamin; Kläui, Mathias
2016-10-01
We present a combined theoretical and experimental study of the energetic stability and accessibility of different domain wall spin configurations in mesoscopic magnetic iron rings. The evolution is investigated as a function of the width and thickness in a regime of relevance to devices, while Fe is chosen as a material due to its simple growth in combination with attractive magnetic properties including high saturation magnetization and low intrinsic anisotropy. Micromagnetic simulations are performed to predict the lowest energy states of the domain walls, which can be either the transverse or vortex wall spin structure, in good agreement with analytical models, with further simulations revealing the expected low temperature configurations observable on relaxation of the magnetic structure from saturation in an external field. In the latter case, following the domain wall nucleation process, transverse domain walls are found at larger widths and thicknesses than would be expected by just comparing the competing energy terms demonstrating the importance of metastability of the states. The simulations are compared to high spatial resolution experimental images of the magnetization using scanning electron microscopy with polarization analysis to provide a phase diagram of the various spin configurations. In addition to the vortex and simple symmetric transverse domain wall, a significant range of geometries are found to exhibit highly asymmetric transverse domain walls with properties distinct from the symmetric transverse wall. Simulations of the asymmetric walls reveal an evolution of the domain wall tilting angle with ring thickness which can be understood from the thickness dependencies of the contributing energy terms. Analysis of all the data reveals that in addition to the geometry, the influence of materials properties, defects and thermal activation all need to be taken into account in order to understand and reliably control the experimentally accessible
Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage.
Hu, Jia-Mian; Yang, Tiannan; Momeni, Kasra; Cheng, Xiaoxing; Chen, Lei; Lei, Shiming; Zhang, Shujun; Trolier-McKinstry, Susan; Gopalan, Venkatraman; Carman, Gregory P; Nan, Ce-Wen; Chen, Long-Qing
2016-04-13
Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.
Laccases Direct Lignification in the Discrete Secondary Cell Wall Domains of Protoxylem1[W][OPEN
Schuetz, Mathias; Benske, Anika; Smith, Rebecca A.; Watanabe, Yoichiro; Tobimatsu, Yuki; Ralph, John; Demura, Taku; Ellis, Brian; Samuels, A. Lacey
2014-01-01
Plants precisely control lignin deposition in spiral or annular secondary cell wall domains during protoxylem tracheary element (TE) development. Because protoxylem TEs function to transport water within rapidly elongating tissues, it is important that lignin deposition is restricted to the secondary cell walls in order to preserve the plasticity of adjacent primary wall domains. The Arabidopsis (Arabidopsis thaliana) inducible VASCULAR NAC DOMAIN7 (VND7) protoxylem TE differentiation system permits the use of mutant backgrounds, fluorescent protein tagging, and high-resolution live-cell imaging of xylem cells during secondary cell wall development. Enzymes synthesizing monolignols, as well as putative monolignol transporters, showed a uniform distribution during protoxylem TE differentiation. By contrast, the oxidative enzymes LACCASE4 (LAC4) and LAC17 were spatially localized to secondary cell walls throughout protoxylem TE differentiation. These data support the hypothesis that precise delivery of oxidative enzymes determines the pattern of cell wall lignification. This view was supported by lac4lac17 mutant analysis demonstrating that laccases are necessary for protoxylem TE lignification. Overexpression studies showed that laccases are sufficient to catalyze ectopic lignin polymerization in primary cell walls when exogenous monolignols are supplied. Our data support a model of protoxylem TE lignification in which monolignols are highly mobile once exported to the cell wall, and in which precise targeting of laccases to secondary cell wall domains directs lignin deposition. PMID:25157028
Laccases direct lignification in the discrete secondary cell wall domains of protoxylem.
Schuetz, Mathias; Benske, Anika; Smith, Rebecca A; Watanabe, Yoichiro; Tobimatsu, Yuki; Ralph, John; Demura, Taku; Ellis, Brian; Samuels, A Lacey
2014-10-01
Plants precisely control lignin deposition in spiral or annular secondary cell wall domains during protoxylem tracheary element (TE) development. Because protoxylem TEs function to transport water within rapidly elongating tissues, it is important that lignin deposition is restricted to the secondary cell walls in order to preserve the plasticity of adjacent primary wall domains. The Arabidopsis (Arabidopsis thaliana) inducible VASCULAR NAC DOMAIN7 (VND7) protoxylem TE differentiation system permits the use of mutant backgrounds, fluorescent protein tagging, and high-resolution live-cell imaging of xylem cells during secondary cell wall development. Enzymes synthesizing monolignols, as well as putative monolignol transporters, showed a uniform distribution during protoxylem TE differentiation. By contrast, the oxidative enzymes LACCASE4 (LAC4) and LAC17 were spatially localized to secondary cell walls throughout protoxylem TE differentiation. These data support the hypothesis that precise delivery of oxidative enzymes determines the pattern of cell wall lignification. This view was supported by lac4lac17 mutant analysis demonstrating that laccases are necessary for protoxylem TE lignification. Overexpression studies showed that laccases are sufficient to catalyze ectopic lignin polymerization in primary cell walls when exogenous monolignols are supplied. Our data support a model of protoxylem TE lignification in which monolignols are highly mobile once exported to the cell wall, and in which precise targeting of laccases to secondary cell wall domains directs lignin deposition.
NASA Astrophysics Data System (ADS)
Büttner, Felix; Krüger, Benjamin; Eisebitt, Stefan; Kläui, Mathias
2015-08-01
Bloch domain walls are the most common type of transition between two out-of-plane magnetized domains (one magnetized upwards, one downwards) in films with perpendicular magnetic anisotropy. The rotation of the spins of such domain walls in the plane of the film requires energy, which is described by an effective anisotropy, the so-called transverse or hard axis anisotropy K⊥. This anisotropy and the related Döring mass density of the domain wall are key parameters of the one-dimensional model to describe the motion of magnetic domain walls. In particular, the critical field strength or current density where oscillatory domain wall motion sets in (Walker breakdown) is directly proportional to K⊥. So far, no general framework is available to determine K⊥ from static characterizations such as magnetometry measurements. Here, we derive a universal analytical expression to calculate the transverse anisotropy constant for the important class of perpendicular magnetic multilayers. All the required input parameters of the model, such as the number of repeats, the thickness of a single magnetic layer, and the layer periodicity, as well as the effective perpendicular anisotropy, the saturation magnetization, and the static domain wall width are accessible by static sample characterizations. We apply our model to a widely used multilayer system and find that the effective transverse anisotropy constant is a factor of seven different from that when using the conventional approximations, showing the importance of using our analysis scheme. Our model is also applicable to domain walls in materials with Dzyaloshinskii-Moriya interaction (DMI). The accurate knowledge of K⊥ is needed to determine other unknown parameters from measurements, such as the DMI strength or the spin polarization of the spin current in current-induced domain wall motion experiments.
Time evolution of temperature and entropy of various collapsing domain walls
Halstead, Evan
2013-08-01
We investigate the time evolution of the temperature and entropy of gravitationally collapsing shells of matter, represented by domain walls, as seen by an asymptotic observer. In particular, we seek to understand how topology and the addition of a cosmological constant affect the gravitational collapse. Previous work has shown that the entropy of a spherically symmetric collapsing domain approaches a constant. In this paper, we reproduce these results, using both a fully quantum and a semi-classical approach, then we repeat the process for a de Sitter Schwarzschild domain wall (spherical with cosmological constant) and a (3+1) BTZ domain wall (cylindrical). We do this by coupling a scalar field to the background of the domain wall and analyzing the spectrum of radiation as a function of time. We find that the spectrum is quasi-thermal, with the degree of thermality increasing as the domain wall approaches the horizon. The thermal distribution allows for the determination of the temperature as a function of time, and we find that the late time temperature is consistent with the Hawking temperature. From the temperature we find the entropy. Since the collapsing domain wall is what forms a black hole, we can compare the results to those of the standard entropy-area relation. We find that the entropy does in fact approach a constant that is consistent with the Hawking entropy. However, both the de Sitter Schwarzschild domain wall and the (3+1) BTZ domain wall show periods of decreasing entropy, which suggests that spontaneous collapse may be prevented.
Tunable short-wavelength spin wave excitation from pinned magnetic domain walls
Van de Wiele, Ben; Hämäläinen, Sampo J.; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan
2016-01-01
Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors. PMID:26883893
NASA Astrophysics Data System (ADS)
Gomonay, O.; Kläui, M.; Sinova, J.
2016-10-01
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here, we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain, and this enables a synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of AF-based devices based on the controlled motion of AF domain walls.
Domain wall motion and Barkhausen effect in magnetic nanoparticles for EOR applications
NASA Astrophysics Data System (ADS)
Baig, Mirza Khurram; Soleimani, Hassan; Yahya, Noorhana
2016-11-01
The domain wall motion in magnetic nanoparticles is a useful parameter of study. The subject of this research is to study of the phenomenon of discontinuous domain wall motion, or the Barkhausen Effect in magnetic nanoparticles. In this work hematite (Fe2O3) nanoparticles have been synthesized using sol-gel auto-combustion and characterized using X-ray diffraction, Field emission scanning electron microscopy (FESEM), Transmission electron microscope (TEM) and Vibrating sample magnetometer (VSM) for crystal structure, morphology, shape, size and magnetic properties respectively. The FESEM and TEM results show that the particles are spherical in nature and average size is 60nm that is suitable for domain walls and barkhuasen effect. The VSM results show high coercivity 175 Oe and low saturation magnetization due to domain wall pinning and barkhausen effect. The size and magnetic properties reveals the existence of domain walls in the synthesized sample. The magnetic properties confirm the energy losses due to domain wall pinning, discontinuous domain rotation or barkhausen effect during magnetization which is useful for oil-water interfacial tension reduction and viscosity of oil. The high surface charge of magnetic nanoparticles and adsorption at the rock surface is useful for wettability alteration of rocks.
Tunable short-wavelength spin wave excitation from pinned magnetic domain walls.
Van de Wiele, Ben; Hämäläinen, Sampo J; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan
2016-02-17
Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors.
Gillijns, W; Aladyshkin, A Yu; Lange, M; Van Bael, M J; Moshchalkov, V V
2005-11-25
Domain-wall superconductivity is studied in a superconducting Nb film placed between two ferromagnetic Co/Pd multilayers with perpendicular magnetization. The parameters of top and bottom ferromagnetic films are chosen to provide different coercive fields, so that the magnetic domain structure of the ferromagnets can be selectively controlled. From the dependence of the critical temperature Tc on the applied magnetic field H, we have found evidence for domain-wall superconductivity in this three-layered F/S/F structure for different magnetic domain patterns. The phase boundary, calculated numerically for this structure from the linearized Ginzburg-Landau equation, is in good agreement with the experimental data.
Characteristics of domain wall chirality and propagation in a Y-junction nanowire
Kwak, W.-Y.; Yoon, Seungha; Kwon, J.-H.; Grünberg, P.; Cho, B. K.
2016-01-14
Chirality-dependent propagation of transverse wall along a nanowire was investigated using a Y-junction with spin-valve structure. It was found that the Y-junction can be used for convenient and effective electric detection of transverse domain wall chirality, especially in a nanowire with sub-200 nm width, where it is difficult to electrically detect chirality using conventional artificial defect, such as a notch, due to small resistance change. Domain wall propagation path in the Y-junction was found to be determined by the wall chirality, whether clockwise or counterclockwise. Using the Y-junction nanowire, characteristics of domain wall chirality that was nucleated in a nucleation pad, attached at the end of a nanowire, were studied and found to be in good agreement with the results of theoretical simulation.
Gravity trapping on a finite thickness domain wall: An analytic study
Cvetic, Mirjam; Robnik, Marko
2008-06-15
We construct an explicit model of the gravity trapping domain-wall potential, where for the first time we can study explicitly the graviton wave function fluctuations for any thickness of domain wall. A concrete form of the potential depends on one parameter 0{<=}x{<=}({pi}/2), which effectively parameterizes the thickness of the domain wall with specific limits x{yields}0 and x{yields}({pi}/2) corresponding to the thin and the thick wall, respectively. The analysis of continuum Kaluza-Klein fluctuations yields explicit expressions for both small and large Kaluza-Klein energy. We also derive specific explicit conditions in the regime x>1, for which the fluctuation modes exhibit a resonance behavior, and which could sizably affect the modifications of the four-dimensional Newton's law at distances that typically are by 4 orders of magnitude larger than those relevant for Newton's law modifications of thin walls.
Imaging and Tailoring the Chirality of Domain Walls in Magnetic Films.
Chen, Gong; Schmid, Andreas K
2015-10-14
Electric-current-induced magnetization switching is a keystone concept in the development of spintronics devices. In the last few years this field has experienced a significant boost with the discovery of ultrafast domain wall motions and very low threshold currents in structures designed to stabilize chiral spin textures. Imaging domain-wall spin textures in situ, while fabricating magnetic multilayer structures, is a powerful way to investigate the forces stabilizing this type of chirality, and informs strategies to engineer structures with controlled spin textures. Here, recent results applying spin-polarized low-energy electron microscopy to image chiral domain walls in magnetic multilayer films are summarized. Providing a way to measure the strength of the asymmetric exchange interaction that causes the chirality, this approach can be used to tailor the texture and handedness of magnetic domain walls by interface engineering. These results advance understanding of the underlying physics and offer new insights toward the design of spintronic devices.
Magneto-optical Kerr effect susceptometer for the analysis of magnetic domain wall dynamics.
Kataja, Mikko; van Dijken, Sebastiaan
2011-10-01
Domain wall dynamics in thin magnetic films with perpendicular and in-plane anisotropy is studied using a novel magneto-optical Kerr effect susceptometery method. The method allows for measurements of domain wall motion under ac field excitation and the analysis of dynamic modes as a function of driving frequency and magnetic field amplitude. Domain wall dynamics in the perpendicular anisotropy system, a Co/Pt multilayer, is characterized by thermally activated creep motion. For this dynamic mode, a polydispersivity exponent of β = 0.50 ± 0.03 is derived at small excitation energy, which is in excellent agreement with theoretical models. The dynamics of the other system, a Co wire with transverse uniaxial anisotropy, is dominated by viscous slide motion in a regular magnetic stripe pattern. Analytical expressions are derived for this magnetic configuration and by using these expressions, accurate values for the depinning field and the domain wall mobility are extracted from the susceptibility measurements.
Beyond the quasi-particle: stochastic domain wall dynamics in soft ferromagnetic nanowires
NASA Astrophysics Data System (ADS)
Hayward, T. J.; Omari, K. A.
2017-03-01
We study the physical origins of stochastic domain wall pinning in soft ferromagnetic nanowires using focused magneto-optic Kerr effect measurements and dynamic micromagnetic simulations. Our results illustrate the ubiquitous nature of these effects in Ni80Fe20 nanowires, and show that they are not only a result of the magnetisation history of the system (i.e. the magnetisation structure of the injected domain walls), and the onset of non-linear propagation dynamics above the Walker breakdown field, but also a complex interplay between the two. We show that this means that, while micromagnetics can be used to make qualitative predictions of the behaviour of domain walls at defect sites, making quantitative predictions is much more challenging. Together, our results reinforce the view that even in these simple pseudo-one dimensional nanomagnets, domain walls must be considered as complex, dynamically evolving objects rather than simple quasi-particles.
Universal charge and current on magnetic domain walls in Weyl semimetals
NASA Astrophysics Data System (ADS)
Araki, Yasufumi; Yoshida, Akihide; Nomura, Kentaro
2016-09-01
Domain walls in three-dimensional Weyl semimetals, formed by localized magnetic moments, are investigated. There appear bound states around the domain wall with the discrete spectrum, among which we find "Fermi arc" states with the linear dispersion. The Fermi arc modes contribute to the electric charge and current localized at the domain wall, which reveal a universal behavior depending only on chemical potential and the splitting of the Weyl nodes. This equilibrium current can be traced back to the chiral magnetic effect, or the edge counterpart of the anomalous Hall effect in the bulk. We propose a way to manipulate the motion of the domain wall, accompanied with the localized charge, by applying an external electric field.
Dzyaloshinskii-Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire
NASA Astrophysics Data System (ADS)
Kheng Teoh, Han; Goolaup, Sarjoosing; Siang Lew, Wen
2017-01-01
Magnetic domain wall positional manipulation is usually through the introduction of potential trap. In this work, we show that the presence of interfacial Dzyaloshinkii-Moriya interaction leads to a different static depinning field for Néel domain walls with the same handedness in a notched magnetic nanowire. The difference in static depinning field is due to the Néel domain wall spin orientation. The spin orientation leads to different torques being exerted on the localized magnetic moments. This inherently imposes a spin orientation dependent diode-like behavior for domain walls in a notched nanowire. An equation which relates the difference in static depinning field to the notch geometry is derived. Micromagnetic simulation with varying damping constant reveals the influence of damping constant on the strength of depinning anomaly.
Analytical modelling and x-ray imaging of oscillations of a single magnetic domain wall
Bocklage, Lars; Kruger, Benjamin; Fischer, Peter; Meier, Guido
2009-07-10
Domain-wall oscillation in a pinnig potential is described analytically in a one dimensional model for the feld-driven case. For a proper description the pinning potential has to be extended by nonharmonic contributions. Oscillations of a domain wall are observed on its genuine time scale by magnetic X-ray microscopy. It is shown that the nonharmonic terms are present in real samples with a strong restoring potential. In the framework of our model we gain deep insight into the domain-wall motion by looking at different phase spaces. The corrections of the harmonic potential can change the motion of the domain wall significantly. The damping parameter of permalloy is determined via the direct imaging technique.
Direct imaging of topological edge states at a bilayer graphene domain wall.
Yin, Long-Jing; Jiang, Hua; Qiao, Jia-Bin; He, Lin
2016-06-17
The AB-BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Although it has been extensively studied in theory, a direct imaging of its topological edge states is still missing. Here we image the topological edge states at the graphene bilayer domain wall by using scanning tunnelling microscope. The simultaneously obtained atomic-resolution images of the domain wall provide us unprecedented opportunities to measure the spatially varying edge states within it. The one-dimensional conducting channels are observed to be mainly located around the two edges of the domain wall, which is reproduced quite well by our theoretical calculations. Our experiment further demonstrates that the one-dimensional topological states are quite robust even in the presence of high magnetic fields. The result reported here may raise hopes of graphene-based electronics with ultra-low dissipation.
Multiple integral representation for the trigonometric SOS model with domain wall boundaries
NASA Astrophysics Data System (ADS)
Galleas, W.
2012-05-01
Using the dynamical Yang-Baxter algebra we derive a functional equation for the partition function of the trigonometric SOS model with domain wall boundary conditions. The solution of the equation is given in terms of a multiple contour integral.
Li, Songtian; Liu, Xiaoxi; Morisako, Akimistu
2012-09-01
The domain wall movement behaviors under current combining with magnetic field in perpendicularly magnetized TbFeCo wire were studied by a polar magneto-optical Kerr effect microscope. The velocity for domain wall creeping along electrons flowing direction was found to be apparently higher than that of domain wall creeping against electrons flowing, which is the signature of the spin transfer torque effect. By employing the modified field-driven creep motion law, a spin transfer efficiency of 2.7 Oe cm2/10(6) A was determined for TbFeCo wire by treating the spin transfer torque as an effective field adding to the external field. The high spin transfer efficiency suggests that perpendicularly magnetized system with sharp domain walls in TbFeCo film shows high superiorities for applications in spin transfer torque based devices compared with in-plane magnetized systems.
Polarization domain walls in optical fibres as topological bits for data transmission
NASA Astrophysics Data System (ADS)
Gilles, M.; Bony, P.-Y.; Garnier, J.; Picozzi, A.; Guasoni, M.; Fatome, J.
2017-01-01
Domain walls are topological defects that occur at symmetry-breaking phase transitions. Although domain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boundary of neighbouring regions of oppositely aligned magnetic dipoles, their equivalents in optics have not been fully explored so far. Here, we experimentally demonstrate the existence of a universal class of polarization domain walls in the form of localized polarization knots in conventional optical fibres. We exploit their binding properties for optical data transmission beyond the Kerr limits of normally dispersive fibres. In particular, we demonstrate how trapping energy in a well-defined train of polarization domain walls allows undistorted propagation of polarization knots at a rate of 28 GHz along a 10 km length of normally dispersive optical fibre. These results constitute the first experimental observation of kink-antikink solitary wave propagation in nonlinear fibre optics.
Polarization domain walls in optical fibres as topological bits for data transmission.
Gilles, M; Bony, P-Y; Garnier, J; Picozzi, A; Guasoni, M; Fatome, J
2017-02-01
Domain walls are topological defects which occur at symmetry-breaking phase transitions. While domain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boundary of neighbouring regions of oppositely aligned magnetic dipoles, their equivalent in optics have not been fully explored so far. Here, we experimentally demonstrate the existence of a universal class of polarization domain walls in the form of localized polarization knots in conventional optical fibres. We exploit their binding properties for optical data transmission beyond the Kerr limits of normally dispersive fibres. In particular, we demonstrate how trapping energy in well-defined train of polarization domain walls allows undistorted propagation of polarization knots at a rate of 28 GHz along a 10 km length of normally dispersive optical fibre. These results constitute the first experimental observation of kink-antikink solitary wave propagation in nonlinear fibre optics.
Mobile metallic domain walls in an all-in-all-out magnetic insulator.
Ma, Eric Yue; Cui, Yong-Tao; Ueda, Kentaro; Tang, Shujie; Chen, Kai; Tamura, Nobumichi; Wu, Phillip M; Fujioka, Jun; Tokura, Yoshinori; Shen, Zhi-Xun
2015-10-30
Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy. The domain walls have a virtually temperature-independent sheet resistance of ~1 kilohm per square, show smooth morphology with no preferred orientation, are free from pinning by disorders, and have strong thermal and magnetic field responses that agree with expectations for all-in-all-out magnetic order.
Huang, Hao-Ting; Lai, Mei-Feng; Hou, Yun-Fang; Wei, Zung-Hang
2015-05-13
We investigated the influence of magnetic domain walls and magnetic fields on the thermal conductivity of suspended magnetic nanowires. The thermal conductivity of the nanowires was obtained using steady-state Joule heating to measure the change in resistance caused by spontaneous heating. The results showed that the thermal conductivity coefficients of straight and wavy magnetic nanowires decreased with an increase in the magnetic domain wall number, implying that the scattering between magnons and domain walls hindered the heat transport process. In addition, we proved that the magnetic field considerably reduced the thermal conductivity of a magnetic nanowire. The influence of magnetic domain walls and magnetic fields on the thermal conductivity of polycrystalline magnetic nanowires can be attributed to the scattering of long-wavelength spin waves mediated by intergrain exchange coupling.
Hawking radiation from a Reisner-Nordström domain wall
Greenwood, Eric
2010-01-01
We investigate the effect on the Hawking radiation given off during the time of collapse of a Reisner-Nordström domain wall. Using the functional Schrödinger formalism we are able to probe the time-dependent regime, which is out of the reach of the standard approximations like the Bogolyubov method. We calculate the occupation number of particles for a scalar field and complex scalar field. We demonstrate that the particles from the scalar field are unaffected by the charge of the Reisner-Nordström domain wall, as is expected since the scalar field doesn't carry any charge, which would couple to the charge of the Reisner-Nordström domain wall. Here the situation effectively reduces to the uncharged case, a spherically symmetric domain wall. To take the charge into account, we consider the complex scalar field which represents charged particles and anti-particles. Here investigate two different cases, first the non-extremal case and second the extremal case. In the non-extremal case we demonstrate that when the particle (anti-particle) carries charge opposite to that of the domain wall, the occupation number becomes suppressed during late times of the collapse. Therefore the dominate occupation number is when the particle (anti-particle) carries the same charge as the domain wall, as expected due to the Coulomb potential carried by the domain walls. In the extremal case we demonstrate that as time increases the temperature of the radiation decreases until when the domain wall reaches the horizon and the temperature then goes to zero. This is in agreement with the Hawking temperature for charged black holes.
Collision of domain walls in asymptotically anti-de Sitter spacetime
Takamizu, Yu-ichi; Maeda, Kei-ichi
2006-05-15
We study collision of two domain walls in five-dimensional asymptotically anti-de Sitter spacetime. This may provide the reheating mechanism of an ekpyrotic (or cyclic) brane universe, in which two Bogomol'nyi-Prasad-Sommerfield branes collide and evolve into a hot big bang universe. We evaluate a change of scalar field making the domain wall and can investigate the effect of a negative cosmological term in the bulk to the collision process and the evolution of our universe.
Elementary depinning processes of magnetic domain walls under fields and currents.
Nguyen, V D; Torres, W Savero; Laczkowski, P; Marty, A; Jamet, M; Beigné, C; Notin, L; Vila, L; Attané, J P
2014-10-01
The probability laws associated to domain wall depinning under fields and currents have been studied in NiFe and FePt nanowires. Three basic domain wall depinning processes, associated to different potential landscapes, are found to appear identically in those systems with very different anisotropies. We show that these processes constitute the building blocks of any complex depinning mechanism. A Markovian analysis is proposed, that provides a unified picture of the depinning mechanism and an insight into the pinning potential landscape.
Voltage drop due to longitudinal spin accumulation across the ballistic domain wall
NASA Astrophysics Data System (ADS)
Fallahi, V.; Safaei, R.
2016-08-01
The ballistic magnetoresistance (MR) of a domain wall constricted in a nanocontact between two p -type semiconducting magnetic nanowires is studied theoretically using the Landauer-Büttiker approach. Our analysis is based on coherent scattering of the carriers by the spin-dependent potential associated with the wall structure. The transmission properties of coherent states are obtained by introducing an algorithm to solve the coupled spin channels Schrödinger equation with mixed Dirichlet-Neumann boundary conditions applied far from the domain wall. Then, the local accumulated spin densities along the nanowire produced by electrical spin injection at the nanocontact are numerically calculated. It is demonstrated that the induced voltage drop due to the longitudinal spin accumulation considerably increases in the case of the narrow domain walls. Furthermore, it is shown that two spin accumulation and mistracking effects give approximately equal contributions to the wall MR ratio in the limit of the sharp domain walls. However, the MR ratio is dominantly determined by the spin accumulation effect as the domain wall width increases.
Magnetic domain walls in bulk and thin film Fe: first principles noncollinear magnetism study
NASA Astrophysics Data System (ADS)
Nakamura, K.; Takeda, Y.; Akiyama, T.; Ito, T.; Freeman, A. J.
2004-03-01
We investigate the electronic and magnetic structures of domain walls in ferromagnetic Fe bulk and Fe(110) monolayer by using the first-principles FLAPW method(Wimmer, Krakauer, Weinert and Freeman, PRB 24, 864(1981)) including noncollinear magnetism with no shape approximation of the magnetization density.(Nakamura, Freeman, Wang, Zhong, and Fernandez-de-Castro, PRB 65, 12402 (2002); 67, 14420 (2003)) In the bulk case, the self-consistent LSDA results demonstrate that the magnetic moments change continuously from one orientation to another as seen in a Bloch wall, and reveal that the formation energy of the domain wall significantly decreases when the domain wall thickness increases, as expected from phenomenological theory. The domain walls in thin film behave very differently: Surprisingly, the magnetic moment directions change rapidly; thus the wall width is only about 8 ÅThis consists and supports the atomically sharp domain wall in Fe/W(110) by the recently proposed SP-STM measurements.(Pratzer, Elmers, Bode, Pietzsch, Kubetzka and Wiesendanger, PRL 87, 127201 (2001))
Electrical effects of spin density wave quantization and magnetic domain walls in chromium.
Kummamuru, Ravi K; Soh, Yeong-Ah
2008-04-17
The role of magnetic domains (and the walls between domains) in determining the electrical properties of ferromagnetic materials has been investigated in great detail for many years, not least because control over domains offers a means of manipulating electron spin to control charge transport in 'spintronic' devices. In contrast, much less attention has been paid to the effects of domains and domain walls on the electrical properties of antiferromagnets: antiferromagnetic domains show no net external magnetic moment, and so are difficult to manipulate or probe. Here we describe electrical measurements on chromium--a simple metal and quintessential spin density wave antiferromagnet--that show behaviour directly related to spin density wave formation and the presence of antiferromagnetic domains. Two types of thermal hysteresis are seen in both longitudinal and Hall resistivity: the first can be explained by the quantization of spin density waves due to the finite film thickness (confirmed by X-ray diffraction measurements) and the second by domain-wall scattering of electrons. We also observe the striking influence of the electrical lead configuration (a mesoscopic effect) on the resistivity of macroscopic samples in the spin density wave state. Our results are potentially of practical importance, in that they reveal tunable electrical effects of film thickness and domain walls that are as large as the highest seen for ferromagnets.
Domain wall pinning in FeCoCu bamboo-like nanowires
Berganza, Eider; Bran, Cristina; Jaafar, Miriam; Vázquez, Manuel; Asenjo, Agustina
2016-01-01
The three dimensional nature of cylindrical magnetic nanowires has opened a new way to control the domain configuration as well as the magnetization reversal process. The pinning effect of the periodic diameter modulations on the domain wall propagation in FeCoCu individual nanowires is determined by Magnetic Force Microscopy, MFM. A main bistable magnetic configuration is firstly concluded from MFM images characterized by the spin reversal between two nearly single domain states with opposite axial magnetization. Complementary micromagnetic simulations confirm a vortex mediated magnetization reversal process. A non-standard variable field MFM imaging procedure allows us to observe metastable magnetic states where the propagating domain wall is pinned at certain positions with enlarged diameter. Moreover, it is demonstrated that it is possible to control the position of the pinned domain walls by an external magnetic field. PMID:27406891
Structures of 90{degrees} domain walls in ferroelectric barium titanate ceramics
Normand, L.; Thorel, A.; Kilaas, R.
1995-03-01
Ferroelectric domain walls in tetragonal ferroelectric barium titanate ceramics are studied by means of electron microscopy. SEM and TEM observations are consistent with domain configuration already proposed. Conventional TEM measurements on SADP agree very well with twin-related model currently admitted for ferroelectric domains. In spite of the very small lattice parameter variation during cooling (involving a small spontaneous strain) of BaTiO{sub 3} ceramics, displacements of specific features associated with atomic column positions are measured across domain walls on high resolution images. Using a dedicated image analysis software, these displacements are calculated with a high precision. 2D vector-maps of the atomic displacements show different kinds of atomistic structure for different domain walls.
Domain wall pinning in FeCoCu bamboo-like nanowires
NASA Astrophysics Data System (ADS)
Berganza, Eider; Bran, Cristina; Jaafar, Miriam; Vázquez, Manuel; Asenjo, Agustina
2016-07-01
The three dimensional nature of cylindrical magnetic nanowires has opened a new way to control the domain configuration as well as the magnetization reversal process. The pinning effect of the periodic diameter modulations on the domain wall propagation in FeCoCu individual nanowires is determined by Magnetic Force Microscopy, MFM. A main bistable magnetic configuration is firstly concluded from MFM images characterized by the spin reversal between two nearly single domain states with opposite axial magnetization. Complementary micromagnetic simulations confirm a vortex mediated magnetization reversal process. A non-standard variable field MFM imaging procedure allows us to observe metastable magnetic states where the propagating domain wall is pinned at certain positions with enlarged diameter. Moreover, it is demonstrated that it is possible to control the position of the pinned domain walls by an external magnetic field.
A summary of staphylococcal C-terminal SH3b_5 cell wall binding domains.
Technology Transfer Automated Retrieval System (TEKTRAN)
Staphylococcal peptidoglycan hydrolases are a potential new source of antimicrobials. A large subset of these proteins contain a C-terminal SH3b_5 cell wall binding domain that has been shown for some to be essential for accurate cell wall recognition and subsequent staphylolytic activity, propert...
Velocity asymmetry of Dzyaloshinskii domain walls in the creep and flow regimes.
Vaňatka, M; Rojas-Sánchez, J-C; Vogel, J; Bonfim, M; Belmeguenai, M; Roussigné, Y; Stashkevich, A; Thiaville, A; Pizzini, S
2015-08-19
We have carried out measurements of domain wall dynamics in a Pt/Co/GdOx(t) wedge sample with perpendicular magnetic anisotropy. When driven by an easy-axis field Hz in the presence of an in-plane field Hx, the domain wall propagation is different along [Formula: see text]x, as expected for samples presenting Dzyaloshinskii-Moriya (DMI) interaction. In the creep regime, the sign and the value of the domain wall velocity asymmetry changes along the wedge. We show that in our samples the domain wall speed versus Hx curves in the creep regime cannot be explained simply in terms of the variation of the domain wall energy with Hx, as suggested by previous works. For this reason the strength and the sign of the DMI cannot be extracted from these measurements. To obtain reliable information on the DMI strength using magnetic field-induced domain wall dynamics, measurements have been performed with high fields, bringing the DW close to the flow regime of propagation. In this case we find large values of the DMI, consistent in magnitude and sign with those obtained from Brillouin light scattering measurements.
Pirro, P.; Sebastian, T.; Leven, B.; Hillebrands, B.; Koyama, T.; Brächer, T.
2015-06-08
The interaction of propagating dipolar spin waves with magnetic domain walls is investigated in square-shaped microstructures patterned from the Heusler compound Co{sub 2}Mn{sub 0.6}Fe{sub 0.4}Si. Using magnetic force microscopy, the reversible preparation of a Landau state with four magnetic domains separated by Néel domain walls is confirmed. A local spin-wave excitation using a microstructured antenna is realized in one of the domains. It is shown by Brillouin light scattering microscopy that the domain structure in the remanence state has a strong influence on the spin-wave excitation and propagation. The domain walls strongly reflect the spin waves and can be used as spin-wave reflectors. A comparison with micromagnetic simulations shows that the strong reflection is due to the long-range dipolar interaction which has important implications for the use of these spin waves for exerting an all-magnonic spin-transfer torque.
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
NASA Astrophysics Data System (ADS)
Rojac, Tadej; Bencan, Andreja; Drazic, Goran; Sakamoto, Naonori; Ursic, Hana; Jancar, Bostjan; Tavcar, Gasper; Makarovic, Maja; Walker, Julian; Malic, Barbara; Damjanovic, Dragan
2016-11-01
Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this scenario has not been directly confirmed, leaving a gap in the understanding of the intriguing electrical properties of domain walls. Here, we provide atomic-scale chemical and structural analyses showing the accumulation of charged defects at domain walls in BiFeO3. The defects were identified as Fe4+ cations and bismuth vacancies, revealing p-type hopping conduction at domain walls caused by the presence of electron holes associated with Fe4+. In agreement with the p-type behaviour, we further show that the local domain-wall conductivity can be tailored by controlling the atmosphere during high-temperature annealing. This work has possible implications for engineering local conductivity in ferroelectrics and for devices based on domain walls.
Controlled creation and displacement of charged domain walls in ferroelectric thin films
Feigl, L.; Sluka, T.; McGilly, L. J.; Crassous, A.; Sandu, C. S.; Setter, N.
2016-01-01
Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes. We demonstrate that ferroelectric switching is accompanied - without exception - by the appearance of charged domain walls and that these walls can be displaced and erased reliably. We ascertain from a combination of scanning probe microscopy, transmission electron microscopy and phase field simulations that creation of charged domain walls is a by-product of, and as such is always coupled to, ferroelectric switching. This is due to the (110) orientation of the tetragonal (Pb,Sr)TiO3 thin films and the crucial role played by the limited conduction of the LSMO bottom electrode layer used in this study. This work highlights that charged domain walls, far from being exotic, unstable structures, as might have been assumed previously, can be robust, stable easily-controlled features in ferroelectric thin films. PMID:27507433
Influence of domain wall interactions on nanosecond switching in magnetic tunnel junctions
NASA Astrophysics Data System (ADS)
Vogel, J.; Kuch, W.; Hertel, R.; Camarero, J.; Fukumoto, K.; Romanens, F.; Pizzini, S.; Bonfim, M.; Petroff, F.; Fontaine, A.; Kirschner, J.
2005-12-01
We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic Fe20Ni80 layer in magnetic tunnel junctionlike FeNi/Al2O3/Co trilayers is considerably lowered by stray fields generated by domain walls present in the hard magnetic Co layer. This internal bias field can significantly increase the local switching speed of the soft layer. The effect is made visible using nanosecond time- and layer-resolved magnetic domain imaging and confirmed by micromagnetic simulations.
Reconfigurable magnetic logic based on the energetics of pinned domain walls
NASA Astrophysics Data System (ADS)
López González, Diego; Casiraghi, Arianna; Van de Wiele, Ben; van Dijken, Sebastiaan
2016-01-01
A magnetic logic concept based on magnetic switching in three stripe domains separated by pinned magnetic domain walls is proposed. The relation between the inputs and the output of the logic operator is determined by the energetics of the domain walls, which can be switched between two distinctive states by an external magnetic field. Together with magnetic read-out along two orthogonal directions, non-volatile AND, OR, NAND, and NOR gates can be created. The logic concept is experimentally demonstrated using CoFeB films on BaTiO3 substrates, and micromagnetic simulations are used to analyze the energetics of the system.
Simulations of super-structure domain walls in two dimensional assemblies of magnetic nanoparticles
NASA Astrophysics Data System (ADS)
Jordanovic, J.; Beleggia, M.; Schiøtz, J.; Frandsen, C.
2015-07-01
We simulate the formation of domain walls in two-dimensional assemblies of magnetic nanoparticles. Particle parameters are chosen to match recent electron holography and Lorentz microscopy studies of almost monodisperse cobalt nanoparticles assembled into regular, elongated lattices. As the particles are small enough to consist of a single magnetic domain each, their magnetic interactions can be described by a spin model in which each particle is assigned a macroscopic "superspin." Thus, the magnetic behaviour of these lattices may be compared to magnetic crystals with nanoparticle superspins taking the role of the atomic spins. The coupling is, however, different. The superspins interact only by dipolar interactions as exchange coupling between individual nanoparticles may be neglected due to interparticle spacing. We observe that it is energetically favorable to introduce domain walls oriented along the long dimension of nanoparticle assemblies rather than along the short dimension. This is unlike what is typically observed in continuous magnetic materials, where the exchange interaction introduces an energetic cost proportional to the area of the domain walls. Structural disorder, which will always be present in realistic assemblies, pins longitudinal domain walls when the external field is reversed, and makes a gradual reversal of the magnetization by migration of longitudinal domain walls possible, in agreement with previous experimental results.
Simulations of super-structure domain walls in two dimensional assemblies of magnetic nanoparticles
Jordanovic, J.; Frandsen, C.; Beleggia, M.; Schiøtz, J.
2015-07-28
We simulate the formation of domain walls in two-dimensional assemblies of magnetic nanoparticles. Particle parameters are chosen to match recent electron holography and Lorentz microscopy studies of almost monodisperse cobalt nanoparticles assembled into regular, elongated lattices. As the particles are small enough to consist of a single magnetic domain each, their magnetic interactions can be described by a spin model in which each particle is assigned a macroscopic “superspin.” Thus, the magnetic behaviour of these lattices may be compared to magnetic crystals with nanoparticle superspins taking the role of the atomic spins. The coupling is, however, different. The superspins interact only by dipolar interactions as exchange coupling between individual nanoparticles may be neglected due to interparticle spacing. We observe that it is energetically favorable to introduce domain walls oriented along the long dimension of nanoparticle assemblies rather than along the short dimension. This is unlike what is typically observed in continuous magnetic materials, where the exchange interaction introduces an energetic cost proportional to the area of the domain walls. Structural disorder, which will always be present in realistic assemblies, pins longitudinal domain walls when the external field is reversed, and makes a gradual reversal of the magnetization by migration of longitudinal domain walls possible, in agreement with previous experimental results.
Evolution of domain walls in the early universe. Ph.D. Thesis - Chicago Univ.
NASA Technical Reports Server (NTRS)
Kawano, Lawrence
1989-01-01
The evolution of domain walls in the early universe is studied via 2-D computer simulation. The walls are initially configured on a triangular lattice and then released from the lattice, their evolution driven by wall curvature and by the universal expansion. The walls attain an average velocity of about 0.3c and their surface area per volume (as measured in comoving coordinates) goes down with a slope of -1 with respect to conformal time, regardless of whether the universe is matter or radiation dominated. The additional influence of vacuum pressure causes the energy density to fall away from this slope and steepen, thus allowing a situation in which domain walls can constitute a significant portion of the energy density of the universe without provoking an unacceptably large perturbation upon the microwave background.
The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry.
Tetienne, J-P; Hingant, T; Martínez, L J; Rohart, S; Thiaville, A; Diez, L Herrera; Garcia, K; Adam, J-P; Kim, J-V; Roch, J-F; Miron, I M; Gaudin, G; Vila, L; Ocker, B; Ravelosona, D; Jacques, V
2015-04-01
The capacity to propagate magnetic domain walls with spin-polarized currents underpins several schemes for information storage and processing using spintronic devices. A key question involves the internal structure of the domain walls, which governs their response to certain current-driven torques such as the spin Hall effect. Here we show that magnetic microscopy based on a single nitrogen-vacancy defect in diamond can provide a direct determination of the internal wall structure in ultrathin ferromagnetic films under ambient conditions. We find pure Bloch walls in Ta/CoFeB(1 nm)/MgO, while left-handed Néel walls are observed in Pt/Co(0.6 nm)/AlOx. The latter indicates the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction, which has strong bearing on the feasibility of exploiting novel chiral states such as skyrmions for information technologies.
Disorder-induced domain wall velocity shift at high fields in perpendicularly magnetized thin films
NASA Astrophysics Data System (ADS)
Voto, Michele; Lopez-Diaz, Luis; Torres, Luis; Moretti, Simone
2016-11-01
Domain wall dynamics in a perpendicularly magnetized system is studied by means of micromagnetic simulations in which disorder is introduced as a dispersion of both the easy-axis orientation and the anisotropy constant over regions reproducing a granular structure of the material. High field dynamics show a linear velocity-field relationship and an additional grain size dependent velocity shift, weakly dependent on both applied field and intrinsic Gilbert's damping parameter. We find the origin of this velocity shift in the nonhomogeneous in-plane effective field generated by the tilting of anisotropy easy axis introduced by disorder. We show that a one-dimensional analytical approach cannot predict the observed velocities and we augment it with the additional dissipation of energy arising from internal domain wall dynamics triggered by disorder. This way we prove that the main cause of higher velocity is the ability of the domain wall to irradiate energy into the domains, acquired with a precise feature of disorder.
Thermoelectric effect across the metal-insulator domain walls in VO2 microbeams.
Cao, J; Fan, W; Zheng, H; Wu, J
2009-12-01
We report on measurements of Seebeck effect in single-crystal VO(2) microbeams across their metal-insulator phase transition. One-dimensionally aligned metal-insulator domain walls were reversibly created and eliminated along single VO(2) beams by varying temperature, which allows for accurate extraction of the net contribution to the Seebeck effect from these domain walls. We observed significantly lower Seebeck coefficient in the metal-insulator coexisting regime than predicted by a linear combination of contributions from the insulator and metal domains. This indicates that the net contribution of the domain walls has an opposite sign from that of the insulator and metal phases separately. Possible origins that may be responsible for this unexpected effect were discussed in the context of complications in this correlated electron material.
Suppression of stochastic pinning in magnetic nanowire devices using “virtual” domain walls
Hodges, M. P. P.; Hayward, T. J.; Bryan, M. T.; Fry, P. W.; Im, M.-Y.; Fischer, P.
2014-09-28
We have investigated the pinning and depinning of “virtual” domain walls in planar magnetic nanowires. Such virtual walls are created when a conventional domain wall becomes annihilated at a narrow gap between two segments of a discontinuous nanowire. By using focused magneto-optical Kerr effect magnetometry to study the repeatability of their depinning, we show that virtual walls exhibit single-mode depinning distributions, characterized by remarkably low, sub-Oersted standard deviations. This is in stark contrast to the depinning of domain walls from conventional notch-shaped defects, which typically exhibit multi-mode depinning field distributions spanning tens to hundreds of Oersteds. High-resolution magnetic soft x-ray microscopy measurements are used to reveal that this high level of repeatability is the result of a simple mediated-nucleation process, which decouples the depinning mechanism from structure of the initially injected DWs. Our work serves as an example of how the complex and dynamical stochastic behaviors exhibited by domain walls in nanowires can be controlled.
Detection of ferromagnetic domain wall pinning and depinning with a semiconductor device
Malec, Chris E.; Bennett, Brian R.; Johnson, Mark B.
2015-12-21
We demonstrate the detection of a ferromagnetic domain wall using a nanoscale Hall cross. A narrow permalloy wire is defined lithographically on top of a Hall cross fabricated from an InAs quantum well. The width of the Hall cross (500 nm–1 μm) is similar to the width of the ferromagnetic wire (200–500 nm), and a geometric pinning site is fabricated in the ferromagnetic wire to trap a domain wall within the area of the Hall cross. The devices provide a signal that is often the same order of magnitude as the offset Hall voltage when a domain wall is located above the Hall cross, and may be useful for memory applications. Different geometries for the Hall cross and ferromagnetic wire are tested, and radiofrequency pulses are sent into the wire to demonstrate current driven domain wall motion. Further changes to the Hall bar geometry with respect to the wire geometry are investigated by numerical computation. A large gain in signal is seen for Hall bars only slightly wider than the ferromagnetic wires as compared to those twice as wide, as well as a larger sensitivity to the exact position of the domain wall with respect to the center of the Hall cross.
Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T
2012-06-06
Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.
Spin distributions and dynamics in domain walls guided by soft magnetic nanowire structures
NASA Astrophysics Data System (ADS)
Yang, Jusang; Erskine, James L.
2017-01-01
Numerical simulations are used to investigate static and dynamic properties of spin distributions within domain walls confined by rectangular cross section Permalloy nanowire conduits having widths up to 1000 nm and thickness up to 50 nm. Phase boundaries and critical regions associated with domain-wall spin distributions of various topologies [transverse (or asymmetric transverse), vortex, double-vortex, triple-vortex and cross-tie] are accurately determined using high-performance computing resources. Mobility curves are calculated that characterize domain-wall propagation for an interesting region of the spin texture phase diagram: 20 nm thick nanowires with widths of 60-700 nm at axial drive fields extending to 150 Oe. The simulations (and corresponding experiments, which are discussed), reveal new propagating fixed configuration domain-wall topologies with enhanced velocity. Effects of temperature on the spin distributions and dynamics are explored, by conducting simulations that include separately varying temperature-dependent parameters (saturation magnetization and exchange constant) and simulating effects of temperature-dependent fluctuations using the Langevin dynamics feature of the simulation code. Related temperature-dependent experiments are discussed. The simulation studies demonstrate a close connection between static and (field-driven) dynamic spin configurations in nanowire-confined domain walls and demonstrate the importance of exploring model-system parameter space at high numerical precision.
Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents
Sharma, Sanchar; Muralidharan, Bhaskaran; Tulapurkar, Ashwin
2015-01-01
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme. PMID:26420544
Domain wall dynamics in ultrathin Pt/Co/AlOx microstrips under large combined magnetic fields
NASA Astrophysics Data System (ADS)
Jué, E.; Thiaville, A.; Pizzini, S.; Miltat, J.; Sampaio, J.; Buda-Prejbeanu, L. D.; Rohart, S.; Vogel, J.; Bonfim, M.; Boulle, O.; Auffret, S.; Miron, I. M.; Gaudin, G.
2016-01-01
The dynamics of magnetic domain walls in ultrathin strip-patterned Pt/Co/AlOx samples with perpendicular easy axis has been studied experimentally under an easy-axis field, superposed to a hard-axis field oriented along the strip. The easy-axis field is large so that the domain walls move well beyond the creep regime. A chiral effect is observed where the domain wall velocity shows a monotonous and surprisingly large variation with an in-plane field. A micromagnetic analysis, combining analytic, one-dimensional, and two-dimensional simulations with structural disorder, shows that this behavior can be reproduced with a Dzyaloshinskii-Moriya interaction of the interfacial type, with due consideration of the dynamics of the tilt degree of freedom of the domain wall. The estimated effective value of this interaction (D ≈-2.2 mJ /m2 for a 0.6 nm Co thickness) is consistent with values obtained by other techniques. It is also shown, by micromagnetic analysis, that several modes and characteristic times occur in the dynamics of the tilt of such domain walls.
Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents
NASA Astrophysics Data System (ADS)
Sharma, Sanchar; Muralidharan, Bhaskaran; Tulapurkar, Ashwin
2015-09-01
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.
Néel-like domain walls in ferroelectric Pb(Zr,Ti)O3 single crystals
Wei, Xian-Kui; Jia, Chun-Lin; Sluka, Tomas; Wang, Bi-Xia; Ye, Zuo-Guang; Setter, Nava
2016-01-01
In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was treated only at the theoretical level and its real appearance is still a mystery. Here we report a Néel-like domain wall imaged by atom-resolved transmission electron microscopy in Ti-rich ferroelectric Pb(Zr1−xTix)O3 crystals, where nanometre-scale monoclinic order coexists with the tetragonal order. The formation of such domain walls is interpreted in the light of polarization discontinuity and clamping effects at phase boundaries between the nesting domains. Phase-field simulation confirms that the coexistence of both phases as encountered near the morphotropic phase boundary promotes the polarization to rotate in a continuous manner. Our results provide a further insight into the complex domain configuration in ferroelectrics, and establish a foundation towards exploring chiral domain walls in ferroelectrics. PMID:27539075
Energy-efficient writing scheme for magnetic domain-wall motion memory
NASA Astrophysics Data System (ADS)
Kim, Kab-Jin; Yoshimura, Yoko; Ham, Woo Seung; Ernst, Rick; Hirata, Yuushou; Li, Tian; Kim, Sanghoon; Moriyama, Takahiro; Nakatani, Yoshinobu; Ono, Teruo
2017-04-01
We present an energy-efficient magnetic domain-writing scheme for domain wall (DW) motion-based memory devices. A cross-shaped nanowire is employed to inject a domain into the nanowire through current-induced DW propagation. The energy required for injecting the magnetic domain is more than one order of magnitude lower than that for the conventional field-based writing scheme. The proposed scheme is beneficial for device miniaturization because the threshold current for DW propagation scales with the device size, which cannot be achieved in the conventional field-based technique.
Domain walls in two-dimensional nematics confined in a small circular cavity.
de Las Heras, Daniel; Velasco, Enrique
2014-03-21
Using Monte Carlo simulation, we study a fluid of two-dimensional hard rods inside a small circular cavity bounded by a hard wall, from the dilute regime to the high-density, layering regime. Both planar and homeotropic anchoring of the nematic director can be induced at the walls through a free-energy penalty. The circular geometry creates frustration in the nematic phase and a polar-symmetry configuration with a distorted director field plus two +1/2 disclinations is created. At higher densities, a quasi-uniform structure is observed with a (minimal) director distortion which is relaxed via the formation of orientational domain walls. This novel structure is not predicted by elasticity theory and is similar to the step-like structures observed in three-dimensional hybrid slit pores. We speculate that the formation of domain walls is a general mechanism to relax elastic stresses under the conditions of strong surface anchoring and severe spatial confinement.
Seemann, K M; Garcia-Sanchez, F; Kronast, F; Miguel, J; Kákay, A; Schneider, C M; Hertel, R; Freimuth, F; Mokrousov, Y; Blügel, S
2012-02-17
We analyze the origin of the electrical resistance arising in domain walls of perpendicularly magnetized materials by considering a superposition of anisotropic magnetoresistance and the resistance implied by the magnetization chirality. The domain wall profiles of L1(0)-FePd and L1(0)-FePt are determined by micromagnetic simulations based on which we perform first-principles calculations to quantify electron transport through the core and closure region of the walls. The wall resistance, being twice as high in L1(0)-FePd than in L1(0)-FePt, is found to be clearly dominated in both cases by a high gradient of magnetization rotation, which agrees well with experimental observations.
Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires.
Hassel, C; Brands, M; Lo, F Y; Wieck, A D; Dumpich, G
2006-12-01
Single (Co/Pt)_{7} multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180 degrees domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of DeltaR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang [Phys. Rev. Lett. 79, 5110 (1997)10.1103/PhysRevLett.79.5110].
NASA Astrophysics Data System (ADS)
Mathurin, Théo; Giordano, Stefano; Dusch, Yannick; Tiercelin, Nicolas; Pernod, Philippe; Preobrazhensky, Vladimir
2016-02-01
The motion of a ferromagnetic domain wall in nanodevices is usually induced by means of external magnetic fields or polarized currents. Here, we demonstrate the possibility to reversibly control the position of a Néel domain wall in a ferromagnetic nanostripe through a uniform mechanical stress. The latter is generated by an electro-active substrate combined with the nanostripe in a multiferroic heterostructure. We develop a model describing the magnetization distribution in the ferromagnetic material, properly taking into account the magnetoelectric coupling. Through its numerical implementation, we obtain the relationship between the electric field applied to the piezoelectric substrate and the position of the magnetic domain wall in the nanostripe. As an example, we analyze a structure composed of a PMN-PT substrate and a TbCo2/FeCo composite nanostripe.
Temperature dependence of the spin torque effect in current-induced domain wall motion.
Laufenberg, M; Bührer, W; Bedau, D; Melchy, P-E; Kläui, M; Vila, L; Faini, G; Vaz, C A F; Bland, J A C; Rüdiger, U
2006-07-28
We present an experimental study of domain wall motion induced by current pulses as well as by conventional magnetic fields at temperatures between 2 and 300 K in a 110 nm wide and 34 nm thick Ni80Fe20 ring. We observe that, in contrast with field-induced domain wall motion, which is a thermally activated process, the critical current density for current-induced domain wall motion increases with increasing temperature, which implies a reduction of the spin torque efficiency. The effect of Joule heating due to the current pulses is measured and taken into account to obtain critical fields and current densities at constant sample temperatures. This allows for a comparison of our results with theory.
NASA Astrophysics Data System (ADS)
Hoelbling, Christian; Zielinski, Christian
2016-07-01
We follow up on a suggestion by Adams and construct explicit domain wall fermion operators with staggered kernels. We compare different domain wall formulations, namely the standard construction as well as Boriçi's modified and Chiu's optimal construction, utilizing both Wilson and staggered kernels. In the process, we generalize the staggered kernels to arbitrary even dimensions and introduce both truncated and optimal staggered domain wall fermions. Some numerical investigations are carried out in the (1 +1 )-dimensional setting of the Schwinger model, where we explore spectral properties of the bulk, effective and overlap Dirac operators in the free-field case, on quenched thermalized gauge configurations and on smooth topological configurations. We compare different formulations using the effective mass, deviations from normality and violations of the Ginsparg-Wilson relation as measures of chirality.
Valence-bond-solid domain walls in a 2D quantum magnet
NASA Astrophysics Data System (ADS)
Shao, Hui; Guo, Wenan; Sandvik, Anders
sing quantum Monte Carlo simulations, we study properties of domain walls in a square-lattice S=1/2 Heisenberg model with additional interactions which can drive the system from an antiferromagnetic (AFM) ground state to a valence-bond solid (VBS). We study the finite-size scaling of the domain-wall energy at the putative ''deconfined'' critical AFM-VBS point, which gives access to the critical exponent governing the domain-wall width. This length-scale diverges faster than the correlation length and also is related to the scale of spinon deconfinement. Our results show additional evidence of deconfied quantum criticality and are compatible with critical exponents extracted from finite-size scaling of other quantities. NSFC Grant No. 11175018, NSF Grant No. DMR-1410126.
Temperature-dependent dynamics of stochastic domain-wall depinning in nanowires.
Wuth, Clemens; Lendecke, Peter; Meier, Guido
2012-01-18
The temperature dependence of domain-wall depinning in permalloy nanowires is investigated by measuring depinning fields and corresponding depinning times as a function of the external magnetic bias field. Domain walls are pinned at triangular notches in the nanowires and detected noninvasively by Hall micromagnetometry. This technique allows one to acquire depinning-field and depinning-time distributions in the temperature range between 5 and 50 K and thus to determine the stochastics of the depinning process. The results are discussed in terms of the Néel-Brown model for thermally activated magnetization reversal, assuming a single energy barrier to overcome. In general, the cases presented deviate from this description and give a clear indication that a more complex term for the energy landscape of domain-wall depinning at constrictions in nanowires is obligatory.
An all-metallic logic gate based on current-driven domain wall motion.
Xu, Peng; Xia, Ke; Gu, Changzhi; Tang, Ling; Yang, Haifang; Li, Junjie
2008-02-01
The walls of magnetic domains can become trapped in a ferromagnetic metallic point contact when the thickness of the film and the width of the contact are less than their critical values. The discovery that domain walls can be moved from such constrictions by a sufficiently large current has attracted considerable attention from researchers working on both fundamental research and potential applications. Here we show that Invar nanocontacts fabricated on silica substrates exhibit a sharp drop in resistance with increasing bias voltage at room temperature in the absence of an applied magnetic field. Moreover, when two nanocontacts are combined in an all-metallic comparison circuit, it is possible to perform logical NOT operations. The use of electrical currents rather than applied magnetic fields to control the domain walls also reduces energy consumption and the risk of crosstalk in devices.
Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire.
Koyama, T; Chiba, D; Ueda, K; Kondou, K; Tanigawa, H; Fukami, S; Suzuki, T; Ohshima, N; Ishiwata, N; Nakatani, Y; Kobayashi, K; Ono, T
2011-03-01
The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.
Domain wall creep in magnetic thin films near the depinning transition
NASA Astrophysics Data System (ADS)
Geng, L. D.; Jin, Y. M.
2016-11-01
Domain wall creep near the depinning transition is investigated by using micromagnetic simulations of Pt/Co/Pt magnetic thin films with perpendicular anisotropy. Weak quenched disorder is considered which provides a depinning field lower than the Walker field thus allows access to the depinning transition below the Walker field. The simulated domain wall velocity is analyzed as a function of applied magnetic field in the creep, depinning, steady flow, and precessional flow regimes and compared with the experimental measurements. The energy barrier exponent and characteristic energy scale characterizing domain wall creep near the depinning transition are obtained by analyzing both the simulation and experimental data, and the results are examined against general theories of creep near the depinning threshold.
Magnetic domain walls as reconfigurable spin-wave nano-channels (Conference Presentation)
NASA Astrophysics Data System (ADS)
Schultheiss, Helmut
2016-10-01
In the research field of magnonics, it is envisaged that spin waves will be used as information carriers, promoting operation based on their wave properties. However, the field still faces major challenges. To become fully competitive, novel schemes for energy-efficient control of spin-wave propagation in two dimensions have to be realized on much smaller length scales than used before. In this presentation, these challenges are addressed with the experimental realization of a novel approach to guide spin waves in reconfigurable, nano-sized magnonic waveguides. For this purpose, two inherent characteristics of magnetism are used: the non-volatility of magnetic remanence states and the nanometre dimensions of domain walls formed within these magnetic configurations. The experimental observation and micromagnetic simulations of spin-wave propagation inside nano-sized domain walls and a first step towards a reconfigurable domain-wall-based magnonic nanocircuitry will be presented.
Rapoport, E; Montana, D; Beach, G S D
2012-11-07
An integrated platform for the capture, transport, and detection of individual superparamagnetic microbeads is described for lab-on-a-chip biomedical applications. Magnetic domain walls in magnetic tracks have previously been shown to be capable of capturing and transporting individual beads through a fluid at high speeds. Here it is shown that the strong magnetostatic interaction between a bead and a domain wall leads to a distinct magneto-mechanical resonance that reflects the susceptibility and hydrodynamic size of the trapped bead. Numerical and analytical modeling is used to quantitatively explain this resonance, and the magneto-mechanical resonant response under sinusoidal drive is experimentally characterized both optically and electrically. The observed bead resonance presents a new mechanism for microbead sensing and metrology. The dual functionality of domain walls as both bead carriers and sensors is a promising platform for the development of lab-on-a-bead technologies.
Magnetostatic dipolar domain-wall pinning in chains of permalloy triangular rings.
Vavassori, P.; Bisero, D.; Bonanni, V.; Busato, A.; Grimsditch, M.; Lebecki, K. M.; Metlushko, V.; Ilic, B.; Materials Science Division; CIC nanoGUNE Consolider; Univ. di Ferrara; CNR-INFM National Research Centre; Polish Academy of Science; Univ. of Illinois at Chicago; Cornell Univ.
2008-01-01
In a combined experimental and numerical study, we investigated the details of the motion and pinning of domain walls in isolated and interacting permalloy triangular rings (side 2 {micro}m, width 250 nm, and thickness 25 nm). To induce interaction between the rings, they were arranged either in vertical chains with an apex of each triangle in proximity to the edge center of the triangle above it or in horizontal chains where the proximity is between the adjacent corners of the triangles. Using longitudinal and diffraction magneto-optic Kerr effects, magnetic force microscopy, and micromagnetic simulations, we determined the field dependence of the spin structure in the rings. In all cases the remnant state of each ring is an 'onion' state characterized by two domain walls - one head to head the other tail to tail - pinned at the apexes. In isolated rings the magnetization reversal occurs between two onion states via the formation of an intermediate vortex state, which arises from the motion and annihilation of the two domain walls. In the case of the horizontal chains the reversal mechanism is unchanged except that the dipolar interaction affects the field range in which the rings are in the vortex state. In the case of vertical chains an additional intermediate state is observed during reversal. The new state involves a domain wall pinned at the center of the edge that is in close proximity to the apex of its neighbor. We show that the domain-wall motion in this last case can be modeled by a triple potential well. Because the new state requires that a domain wall be pinned at the neighboring apex, our observations can be viewed as a very elementary form of magnetic logic.
NASA Astrophysics Data System (ADS)
Dutta, S.; Siddiqui, S. A.; Currivan-Incorvia, J. A.; Ross, C. A.; Baldo, M. A.
2015-12-01
Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notches, triangular notches, changes in anisotropy, and roughness measured from images of fabricated wires, in sub-100-nm-wide nanowires with in-plane and perpendicular magnetic anisotropy using micromagnetic modeling. Pinning fields calculated for a model based on discretized images of physical wires are compared to experimental measurements. When the width of the domain wall is smaller than the notch period, the domain wall velocity is modulated as the domain wall propagates along the wire. We find that in sub-30-nm-wide wires, edge defects determine the operating threshold and domain wall dynamics.
Microwave a.c. conductivity of domain walls in ferroelectric thin films
Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro
2016-01-01
Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997
Microwave a.c. conductivity of domain walls in ferroelectric thin films.
Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro
2016-05-31
Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.
Microwave a.c. conductivity of domain walls in ferroelectric thin films
Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro
2016-05-31
Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.
Microwave a.c. conductivity of domain walls in ferroelectric thin films
Tselev, Alexander; Yu, Pu; Cao, Ye; ...
2016-05-31
Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphologicalmore » roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.« less
Gravitational waves from domain walls in the next-to-minimal supersymmetric standard model
Kadota, Kenji; Kawasaki, Masahiro; Saikawa, Ken'ichi E-mail: kawasaki@icrr.u-tokyo.ac.jp
2015-10-01
The next-to-minimal supersymmetric standard model predicts the formation of domain walls due to the spontaneous breaking of the discrete Z{sub 3}-symmetry at the electroweak phase transition, and they collapse before the epoch of big bang nucleosynthesis if there exists a small bias term in the potential which explicitly breaks the discrete symmetry. Signatures of gravitational waves produced from these unstable domain walls are estimated and their parameter dependence is investigated. It is shown that the amplitude of gravitational waves becomes generically large in the decoupling limit, and that their frequency is low enough to be probed in future pulsar timing observations.
Tachyon condensation due to domain-wall annihilation in Bose-Einstein condensates.
Takeuchi, Hiromitsu; Kasamatsu, Kenichi; Tsubota, Makoto; Nitta, Muneto
2012-12-14
We show theoretically that a domain-wall annihilation in two-component Bose-Einstein condensates causes tachyon condensation accompanied by spontaneous symmetry breaking in a two-dimensional subspace. Three-dimensional vortex formation from domain-wall annihilations is considered a kink formation in subspace. Numerical experiments reveal that the subspatial dynamics obey the dynamic scaling law of phase-ordering kinetics. This model is experimentally feasible and provides insights into how the extra dimensions influence subspatial phase transition in higher-dimensional space.
Electric field driven magnetic domain wall motion in ferromagnetic-ferroelectric heterostructures
Van de Wiele, Ben; Laurson, Lasse; Franke, Kévin J. A.; Dijken, Sebastiaan van
2014-01-06
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic fields or electric currents, MDW motion arises here as a result of strong pinning of MDWs onto ferroelectric domain walls (FDWs) via local strain coupling. By performing extensive micromagnetic simulations, we find several dynamical regimes, including instabilities such as spin wave emission and complex transformations of the MDW structure. In all cases, the time-averaged MDW velocity equals that of the FDW, indicating the absence of Walker breakdown.
Atomic-scale magnetic domain walls in quasi-one-dimensional Fe nanostripes.
Pratzer, M; Elmers, H J; Bode, M; Pietzsch, O; Kubetzka, A; Wiesendanger, R
2001-09-17
Fe nanostripes on W(110) are investigated by Kerr magnetometry and spin-polarized scanning tunneling microscopy (SP-STM). An Arrhenius law is observed for the temperature dependent magnetic susceptibility indicating a one-dimensional magnetic behavior. The activation energy for creating antiparallel spin blocks indicates extremely narrow domain walls with a width on a length scale of the lattice constant. This is confirmed by imaging the domain wall by SP-STM. This information allows the quantification of the exchange stiffness and the anisotropy constant.
Controlled manipulation of domain walls in ultra-thin CoFeB nanodevices
NASA Astrophysics Data System (ADS)
Wells, J.; Lee, J. H.; Mansell, R.; Cowburn, R. P.; Kazakova, O.
2016-02-01
We report on studies of magnetic domain wall (DW) movement within nanodevices containing magnetic components formed from perpendicularly magnetised CoFeB (0.6 nm) thin films. Methods for low energy and smooth DW propagation as well as controlled and reproducible pinning of DWs at geometrically defined sites along nanowires are presented. Conventional anomalous Hall effect measurements as well as an indirect method using overlying electrodes are presented and compared. The results obtained from the individual studies of DW injection, propagation, pinning and measurement are assimilated into a prototype device suitable for the controlled pinning and annihilation of a single domain wall within the structure.
Domain wall dynamics in a spin-reorientation transition system Au/Co/Au
Roy, Sujoy; Seu, Keoki; Turner, Joshua J.; Park, Sungkyun; Kevan, Steve; Falco, Charles M.
2009-05-14
We report measurements of domain wall dynamics in an ultrathin Au/Co/Au system that exhibits a spin reorientation phase transition as a function of temperature.The domain walls exhibit cooperative motion throughout the temperature range of 150 - 300 K. The decay times were found to exhibit a maximum at the transition temperature. The slowdown has been explained as due to formation of a double well in the energy landscape by the different competing interactions. Our results show that the complex, slow dynamics can provide a more fundamental understanding of magnetic phase transitions.
Intrinsic pinning of vorticity by domain walls of l texture in superfluid 3He-A.
Walmsley, P M; White, I J; Golov, A I
2004-11-05
We present the first observation of substantial persistent flow in superfluid 3He-A in thick simply connected slabs in a zero magnetic field, but only in l textures with domain walls. The flow is induced in a rotating cryostat using a torsional oscillator as a probe. The hysteretic dependences of the trapped vorticity on the maximal angular velocity of rotation are fairly universal for different densities of domain walls and slab thicknesses. A model of a critical state set by either the critical velocity for vortex nucleation or pinning strength explains all observations.
Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet
NASA Astrophysics Data System (ADS)
Bernand-Mantel, A.; Herrera-Diez, L.; Ranno, L.; Pizzini, S.; Vogel, J.; Givord, D.; Auffret, S.; Boulle, O.; Miron, I. M.; Gaudin, G.
2013-03-01
The electric (E)-field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material: controlling domain wall nucleation and stopping DW propagation at the edge of the electrode.
Gravitational waves from domain walls in the next-to-minimal supersymmetric standard model
Kadota, Kenji; Kawasaki, Masahiro; Saikawa, Ken’ichi
2015-10-16
The next-to-minimal supersymmetric standard model predicts the formation of domain walls due to the spontaneous breaking of the discrete Z{sub 3}-symmetry at the electroweak phase transition, and they collapse before the epoch of big bang nucleosynthesis if there exists a small bias term in the potential which explicitly breaks the discrete symmetry. Signatures of gravitational waves produced from these unstable domain walls are estimated and their parameter dependence is investigated. It is shown that the amplitude of gravitational waves becomes generically large in the decoupling limit, and that their frequency is low enough to be probed in future pulsar timing observations.
Narrowing of antiferromagnetic domain wall in corundum-type Cr2O3 by lattice strain
NASA Astrophysics Data System (ADS)
Kota, Yohei; Imamura, Hiroshi
2017-01-01
The effect of lattice strain on single-ion magnetic anisotropy and antiferromagnetic domain wall width in corundum-type Cr2O3 is studied using first-principles calculations and micromagnetics simulations. Without lattice strain, the domain wall width L DW is about 80 nm. When the lattice constant a is increased by 1-2%, L DW is reduced to less than 20 nm due to the increase in the single-ion anisotropy constant K 1 to on the order of 106 erg/cm3.
NASA Astrophysics Data System (ADS)
Ding, Song; Tian, GuiYun; Dobmann, Gerd; Wang, Ping
2017-01-01
Skewness of Magnetic Barkhausen Noise (MBN) signal is used as a new feature for applied stress determination. After experimental studies, skewness presents its ability for measuring applied tensile stress compared with conventional feature, meanwhile, a non-linear behavior of this new feature and an independence of the excitation conditions under compressive stress are found and discussed. Effective damping during domain wall motion influencing the asymmetric shape of the MBN statistical distribution function is discussed under compressive and tensile stress variation. Domain wall (DW) energy and distance between pinning edges of the DW are considered altering the characteristic relaxation time, which is the reason for the non-linear phenomenon of skewness.
Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet
Korkusinski, M.; Hawrylak, P.; Liu, H. W.; Hirayama, Y.
2017-01-01
The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means. PMID:28262758
Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet
NASA Astrophysics Data System (ADS)
Korkusinski, M.; Hawrylak, P.; Liu, H. W.; Hirayama, Y.
2017-03-01
The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means.
Wall mechanics and exocytosis define the shape of growth domains in fission yeast
NASA Astrophysics Data System (ADS)
Abenza, Juan F.; Couturier, Etienne; Dodgson, James; Dickmann, Johanna; Chessel, Anatole; Dumais, Jacques; Salas, Rafael E. Carazo
2015-10-01
The amazing structural variety of cells is matched only by their functional diversity, and reflects the complex interplay between biochemical and mechanical regulation. How both regulatory layers generate specifically shaped cellular domains is not fully understood. Here, we report how cell growth domains are shaped in fission yeast. Based on quantitative analysis of cell wall expansion and elasticity, we develop a model for how mechanics and cell wall assembly interact and use it to look for factors underpinning growth domain morphogenesis. Surprisingly, we find that neither the global cell shape regulators Cdc42-Scd1-Scd2 nor the major cell wall synthesis regulators Bgs1-Bgs4-Rgf1 are reliable predictors of growth domain geometry. Instead, their geometry can be defined by cell wall mechanics and the cortical localization pattern of the exocytic factors Sec6-Syb1-Exo70. Forceful re-directioning of exocytic vesicle fusion to broader cortical areas induces proportional shape changes to growth domains, demonstrating that both features are causally linked.
Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet.
Korkusinski, M; Hawrylak, P; Liu, H W; Hirayama, Y
2017-03-06
The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means.
Wall mechanics and exocytosis define the shape of growth domains in fission yeast.
Abenza, Juan F; Couturier, Etienne; Dodgson, James; Dickmann, Johanna; Chessel, Anatole; Dumais, Jacques; Carazo Salas, Rafael E
2015-10-12
The amazing structural variety of cells is matched only by their functional diversity, and reflects the complex interplay between biochemical and mechanical regulation. How both regulatory layers generate specifically shaped cellular domains is not fully understood. Here, we report how cell growth domains are shaped in fission yeast. Based on quantitative analysis of cell wall expansion and elasticity, we develop a model for how mechanics and cell wall assembly interact and use it to look for factors underpinning growth domain morphogenesis. Surprisingly, we find that neither the global cell shape regulators Cdc42-Scd1-Scd2 nor the major cell wall synthesis regulators Bgs1-Bgs4-Rgf1 are reliable predictors of growth domain geometry. Instead, their geometry can be defined by cell wall mechanics and the cortical localization pattern of the exocytic factors Sec6-Syb1-Exo70. Forceful re-directioning of exocytic vesicle fusion to broader cortical areas induces proportional shape changes to growth domains, demonstrating that both features are causally linked.
Khatua, Dipak Kumar; V., Lalitha K.; Fancher, Chris M.; Jones, Jacob L.; Ranjan, Rajeev
2016-10-18
High energy synchrotron X-ray diffraction, in situ with electric field, was carried out on the morphotropic phase boundary composition of the piezoelectric alloy PbTiO_{3}-BiScO_{3}. We demonstrate a strong correlation between ferroelectric-ferroelastic domain reorientation, lattice strain and phase transformation. Lastly, we also show the occurrence of the three phenomena and persistence of their correlation in the weak field regime.
New confining force solution of the QCD axion domain-wall problem.
Barr, S M; Kim, Jihn E
2014-12-12
The serious cosmological problems created by the axion-string-axion-domain-wall system in standard axion models are alleviated by positing the existence of a new confining force. The instantons of this force can generate an axion potential that erases the axion strings long before QCD effects become important, thus preventing QCD-generated axion walls from ever appearing. Axion walls generated by the new confining force would decay so early as not to contribute significantly to the energy in axion dark matter.
An exact solution for a thick domain wall in general relativity
NASA Technical Reports Server (NTRS)
Goetz, Guenter; Noetzold, Dirk
1989-01-01
An exact solution of the Einstein equations for a static, planar domain wall with finite thickness is presented. At infinity, density and pressure vanish and the space-time tends to the Minkowski vacuum on one side of the wall and to the Taub vacuum on the other side. A surprising feature of this solution is that the density and pressure distribution are symmetric about the central plane of the wall whereas the space-time metric and therefore also the gravitational field experienced by a test particle is asymmetric.
Trapping and injecting single domain walls in magnetic wire by local fields.
Vázquez, Manuel; Basheed, G A; Infante, Germán; Del Real, Rafael P
2012-01-20
A single domain wall (DW) moves at linearly increasing velocity under an increasing homogeneous drive magnetic field. Present experiments show that the DW is braked and finally trapped at a given position when an additional antiparallel local magnetic field is applied. That position and its velocity are further controlled by suitable tuning of the local field. In turn, the parallel local field of small amplitude does not significantly affect the effective wall speed at long distance, although it generates tail-to-tail and head-to-head pairs of walls moving along opposite directions when that field is strong enough.
Theory of Current-Driven Domain Wall Motion: Spin Transfer versus Momentum Transfer
NASA Astrophysics Data System (ADS)
Tatara, Gen; Kohno, Hiroshi
2004-02-01
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current has two effects: one is momentum transfer, which is proportional to the charge current and wall resistivity (ρw); the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall motion is determined by the hard-axis magnetic anisotropy, except for the case of very strong pinning. For thin walls, as in nanocontacts and magnetic semiconductors, the momentum-transfer effect dominates, and the threshold current is proportional to V0/ρw, V0 being the pinning potential.
Rhensius, J; Heyne, L; Backes, D; Krzyk, S; Heyderman, L J; Joly, L; Nolting, F; Kläui, M
2010-02-12
Using photoemission electron microscopy, we image the dynamics of a field pulse excited domain wall in a Permalloy nanowire. We find a delay in the onset of the wall motion with respect to the excitation and an oscillatory relaxation of the domain wall back to its equilibrium position, defined by an external magnetic field. The origin of both of these inertia effects is the transfer of energy between energy reservoirs. By imaging the distribution of the exchange energy in the wall spin structure, we determine these reservoirs, which are the basis of the domain wall mass concept.
Bryan, M. T.; Fry, P. W.; Fischer, P.; Allwood, D. A.
2007-12-01
Magnetic transmission X-ray microscopy (M-TXM) is used to image domain walls in magnetic ring structures formed by a 300 nm wide, 24 nm thick Ni{sub 81}Fe{sub 19} nanowire. Both transverse and vortex type domain walls are observed after application of different field sequences. Domain walls can be observed by comparing images obtained from opposite field sequences, or else domain wall propagation observed by comparing successive images in a particular field sequence. This demonstrates the potential use of M-TXM in developing and understanding planar magnetic nanowire behavior.
Miyamoto, S; Miura, T; Watanabe, S; Nagase, K; Hirayama, Y
2016-03-09
We present fractional quantum Hall domain walls confined in a gate-defined wire structure. Our experiments utilize spatial oscillation of domain walls driven by radio frequency electric fields to cause nuclear magnetic resonance. The resulting spectra are discussed in terms of both large quadrupole fields created around the wire and hyperfine fields associated with the oscillating domain walls. This provides the experimental fact that the domain walls survive near the confined geometry despite of potential deformation, by which a localized magnetic resonance is allowed in electrical means.
Magnetostatic dipolar domain-wall pinning in chains of permalloy triangular rings
NASA Astrophysics Data System (ADS)
Vavassori, P.; Bisero, D.; Bonanni, V.; Busato, A.; Grimsditch, M.; Lebecki, K. M.; Metlushko, V.; Ilic, B.
2008-11-01
In a combined experimental and numerical study, we investigated the details of the motion and pinning of domain walls in isolated and interacting permalloy triangular rings (side 2μm , width 250 nm, and thickness 25 nm). To induce interaction between the rings, they were arranged either in vertical chains with an apex of each triangle in proximity to the edge center of the triangle above it or in horizontal chains where the proximity is between the adjacent corners of the triangles. Using longitudinal and diffraction magneto-optic Kerr effects, magnetic force microscopy, and micromagnetic simulations, we determined the field dependence of the spin structure in the rings. In all cases the remnant state of each ring is an “onion” state characterized by two domain walls—one head to head the other tail to tail—pinned at the apexes. In isolated rings the magnetization reversal occurs between two onion states via the formation of an intermediate vortex state, which arises from the motion and annihilation of the two domain walls. In the case of the horizontal chains the reversal mechanism is unchanged except that the dipolar interaction affects the field range in which the rings are in the vortex state. In the case of vertical chains an additional intermediate state is observed during reversal. The new state involves a domain wall pinned at the center of the edge that is in close proximity to the apex of its neighbor. We show that the domain-wall motion in this last case can be modeled by a triple potential well. Because the new state requires that a domain wall be pinned at the neighboring apex, our observations can be viewed as a very elementary form of magnetic logic.
NASA Astrophysics Data System (ADS)
Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J. M.
2016-07-01
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii-Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current.
A small cellulose binding domain protein in Phytophtora is cell wall localized
Technology Transfer Automated Retrieval System (TEKTRAN)
Cellulose binding domains (CBD) are structurally conserved regions linked to catalytic regions of cellulolytic enzymes. While widespread amongst saprophytic fungi that subsist on plant cell wall polysaccharides, they are not generally present in plant pathogenic fungi. A genome wide survey of CBDs w...
Domain wall contribution to the nonlinear dielectric response: effective potential model
NASA Astrophysics Data System (ADS)
Placeres-Jiménez, R.; Rino, J. P.; Gonçalves, A. M.; Eiras, J. A.
2015-11-01
Domain wall displacement has an important contribution to the different nonlinear dielectric responses observed in ferroelectrics. For a moderated alternating electric field, domain walls perform a small displacement around their equilibrium positions. Such motion of the domain walls can be modelled as a body moving in a viscous medium under the action of an effective potential W(l). From this model the dispersion relationships are derived. The exact expression for the effective potential is found assuming that the dielectric permittivity depends on the electric field strength as \\varepsilon \\propto 1/(α +β {{E}2}) . The effect of multidomain structure and polarization hysteresis are introduced through the effective field approximation {{E}\\text{eff}}\\equiv E+κ P(E) . An important merit of the model is that it allows the simulation of transient polarization processes for the arbitrary input signal, predicting a power law for the polarization and depolarization currents. An analytic expression is found for the dependence of the permittivity on the electric field strength that correctly reproduces its hysteretic behaviour. The polarization loop and nonlinear dielectric response for subswitching the alternating electric field are simulated and compared with experimental data obtained from PZT thin films. It was observed that the simulated dielectric loss was lower than the experimental one, which can be explained as a result of the interaction of domain walls with defects. Point defects are introduced into the model as a perturbation of the effective potential, showing the dependence of the dielectric loss on the concentration of the defects.
Frequency-Induced Bulk Magnetic Domain-Wall Freezing Visualized by Neutron Dark-Field Imaging
NASA Astrophysics Data System (ADS)
Betz, B.; Rauscher, P.; Harti, R. P.; Schäfer, R.; Van Swygenhoven, H.; Kaestner, A.; Hovind, J.; Lehmann, E.; Grünzweig, C.
2016-08-01
We use neutron dark-field imaging to visualize and interpret the response of bulk magnetic domain walls to static and dynamic magnetic excitations in (110)-Goss textured iron silicon high-permeability steel alloy. We investigate the domain-wall motion under the influence of an external alternating sinusoidal magnetic field. In particular, we perform scans combining varying levels of dcoffset (0 - 30 A /m ) , oscillation amplitude Aac (0 - 1500 A /m ) , and frequency fac ((0 - 200 Hz ) . By increasing amplitude Aac while maintaining constant values of dcoffset and fac , we record the transition from a frozen domain-wall structure to a mobile one. Vice versa, increasing fac while keeping Aac and dcoffset constant led to the reverse transition from a mobile domain-wall structure into a frozen one. We show that varying both Aac and fac shifts the position of the transition region. Furthermore, we demonstrate that higher frequencies require higher oscillation amplitudes to overcome the freezing phenomena. The fundamental determination and understanding of the frequency-induced freezing process in high-permeability steel alloys is of high interest to the further development of descriptive models for bulk macromagnetic phenomena. Likewise, the efficiency of transformers can be improved based on our results, since these alloys are used as transformer core material.
Nonlinear modeling on rate dependent ferroelectric and ferroelastic response of 1-3 piezocomposites
NASA Astrophysics Data System (ADS)
Jayendiran, R.; Arockiarajan, A.
2016-06-01
The effect of loading rate on ferroelectric and ferroelastic behavior of 1-3 piezocomposites is presented in this work. Experiments are conducted for various loading rates under different loading conditions such as electrical and electromechanical to measure the rate dependent response of 1-3 piezocomposite compared with bulk piezoceramics. A thermodynamic based rate dependent domain switching criteria has been proposed to predict the ferroelectric and ferroelastic behavior of homogenized 1-3 piezocomposites. In this model, volume fraction of six distinct uni-axial variants are used as internal variables to describe the microscopic state of the material. Plasticity based kinematic hardening parameter is introduced as a function of internal variables to describe the grain boundary effects. Homogenization of 1-3 piezocomposite material properties are obtained by finite element (FE) resonator models using commercially available FE tool Abaqus. To evaluate the possible modes of vibration of 1-3 piezocomposite four different configuration of FE resonators are modeled. The FE resonator model is validated with the impedance spectra obtained experimentally for length extensional and thickness extensional resonator models. The predicted effective properties using the resonance based technique are incorporated in the proposed rate dependent macromechanical model to study the behavior of 1-3 piezocomposites. The simulated results are compared with the experimental observations.
NASA Astrophysics Data System (ADS)
Metaxas, Peter J.; Albert, Maximilian; Lequeux, Steven; Cros, Vincent; Grollier, Julie; Bortolotti, Paolo; Anane, Abdelmadjid; Fangohr, Hans
2016-02-01
We study resonant translational, breathing, and twisting modes of transverse magnetic domain walls pinned at notches in ferromagnetic nanostrips. We demonstrate that a mode's sensitivity to notches depends strongly on the mode's characteristics. For example, the frequencies of modes that involve lateral motion of the wall are the most sensitive to changes in the notch intrusion depth, especially at the narrow, more strongly confined end of the domain wall. In contrast, the breathing mode, whose dynamics are concentrated away from the notches is relatively insensitive to changes in the notches' sizes. We also demonstrate a sharp drop in the translational mode's frequency towards zero when approaching depinning which is confirmed, using a harmonic oscillator model, to be consistent with a reduction in the local slope of the notch-induced confining potential at its edge.
Novel chiral magnetic domain wall structure in Fe/Ni/Cu(001) films.
Chen, G; Zhu, J; Quesada, A; Li, J; N'Diaye, A T; Huo, Y; Ma, T P; Chen, Y; Kwon, H Y; Won, C; Qiu, Z Q; Schmid, A K; Wu, Y Z
2013-04-26
Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.
Evolution of light domain walls interacting with dark matter, part 1
NASA Technical Reports Server (NTRS)
Massarotti, Alessandro
1990-01-01
The evolution of domain walls generated in the early Universe is discussed considering an interaction between the walls and a major gaseous component of the dark matter. The walls are supposed able to reflect the particles elastically and with a reflection coefficient of unity. A toy Lagrangian that could give rise to such a phenomenon is discussed. In the simple model studied, highly non-relativistic and slowly varying speeds are obtained for the domain walls (approximately 10 (exp -2)(1+z)(exp -1)) and negligible distortions of the microwave background. In addition, these topological defects may provide a mechanism of forming the large scale structure of the Universe, by creating fluctuations in the dark matter (delta rho/rho approximately O(1)) on a scale comparable with the distance the walls move from the formation (in the model d less than 20 h(exp -1) Mpc). The characteristic scale of the wall separation can be easily chosen to be of the order of 100 Mpc instead of being restricted to the horizon scale, as usually obtained.
Quantum collapse of a charged n-dimensional BTZ-like domain wall
NASA Astrophysics Data System (ADS)
Greenwood, Eric
We investigate both the classical and quantum gravitational collapse of a massive, charged, nonrotating n-dimensional Bañados-Teitelboim-Zanelli (BTZ)-like domain wall in AdS space. In the classical picture, we show that, as far as the asymptotic observer is concerned, the details of the collapse depend on the amount of charge present in the domain wall; that is, if the domain wall is extremal, nonextremal or overcharged. In both the extremal and nonextremal cases, the collapse takes an infinite amount of observer time to complete. However, in the over-charged case, the collapse never actually occurs, instead one finds an oscillatory solution which prevents the formation of a naked singularity. As far as the infalling observer is concerned, in the nonextremal case, the collapse is completed within a finite amount of proper time. Thus, the gravitational collapse follows that of the typical formation of a black hole via gravitational collapse. Quantum mechanically, we take the absence of induced quasi-particle production and fluctuations of the metric geometry; that is, we ignore the effect of radiation and back-reaction. For the asymptotic observer, we find that, near the horizon, quantization of the domain wall does not allow the formation of the black hole in a finite amount of observer time. For the infalling observer, we are primarily interested in the quantum mechanical effect as the domain wall approaches the classical singularity. In this region, the main result is that the wave function exhibits nonlocal effects, demonstrated by the fact that the Hamiltonian depends on an infinite number of derivatives that cannot be truncated after a finite number of terms. Furthermore, in the large energy density limit, the wave function vanishes at the classical singularity implying that quantization does not rid the black hole of its singularity.
Stability of a pinned magnetic domain wall as a function of its internal configuration
Montaigne, F.; Duluard, A.; Briones, J.; Lacour, D.; Hehn, M.; Childress, J. R.
2015-01-14
It is shown that there are many stable configurations for a domain wall pinned by a notch along a magnetic stripe. The stability of several of these configurations is investigated numerically as a function of the thickness of the magnetic film. The depinning mechanism depends on the structure of the domain wall and on the thickness of the magnetic film. In the case of a spin-valve structure, it appears that the stray fields emerging from the hard layer at the notch location influence the stability of the micromagnetic configuration. Different depinning mechanisms are thus observed for the same film thickness depending on the magnetization orientation of the propagating domain. This conclusion qualitatively explains experimental magnetoresistance measurements.
Domain structure and phase transition in Sc-doped zirconia
NASA Astrophysics Data System (ADS)
Brunauer, G.; Boysen, H.; Frey, F.; Ehrenberg, H.
2002-01-01
The temperature dependence of the domain structure associated with the ferroelastic phase transition (Fm↔R bar 3 m) in ZrO2 doped with 11% Sc2O3 has been determined from a peak shape analysis of high-resolution synchrotron x-ray powder diffraction data. In the temperature region of coexisting phases the observed characteristic anisotropic broadening and asymmetry of the lines is modelled by three different phases: a main rhombohedral phase, a distorted rhombohedral phase with a smaller c/a ratio, and a cubic phase. The latter two are assigned to the internal structure of the domain walls between two adjacent twin domains. The size and amount of the cubic phase show an initially slow increase with temperature followed by a very steep increase and a slow one after that. The size of the (main) rhombohedral domains remains nearly constant, while (micro-) strain in the distorted regions gradually decreases.
Time evolution of domain-wall motion induced by nanosecond laser pulses
NASA Astrophysics Data System (ADS)
Gerasimov, M. V.; Logunov, M. V.; Spirin, A. V.; Nozdrin, Yu. N.; Tokman, I. D.
2016-07-01
The time evolution of the magnetization normal component change in a garnet film with a labyrinthine domain structure under the action of circularly and linearly polarized laser pump pulses (the pulse duration is 5 ns; the wavelength is 527 nm) has been studied. The dynamic state of the magnetic film was registered using an induction method with a time resolution of 1 ns. It was found that for the initial state of the magnetic film with an equilibrium domain structure, the form of the photomagnetization pulse reflects the time evolution of a domain-wall motion. The domain-wall motion initiated by the circularly polarized laser pump pulse continues in the same direction for a time more than an order of magnitude exceeding the laser pulse duration. In general, the time evolution of the domain-wall movement occurs in three stages. The separation of the contributions to the photomagnetization from the polarization-dependent and polarization-independent effects was carried out. The photomagnetization pulses that reflect the contributions by the aforementioned effects differ by form, and more than two orders of magnitude by duration. Their form doesn't change under a magnetic bias field change, only the photomagnetization pulse amplitude does: for the polarization-dependent contribution, it's an even function of the field, and for the polarization-independent contribution, it's an odd function. The interconnection between the polarization-dependent and polarization-independent effects, on the one hand, and the domain-wall displacement and the change of the film's saturation magnetization, on the other hand, was identified and described.
The relation between ferroelasticity and superconductivity
NASA Technical Reports Server (NTRS)
Molak, A.; Manka, R.
1990-01-01
The high-temperature superconductivity is explained widely by the layered crystal structure. The one- and two-dimensional subsystems and their interaction are investigated here. It is assumed that the high-T(sub c) superconductivity takes place in the two-dimensional subsystem and the increase of the phase transition temperature from 60 K up to 90 K is the consequence of turning on the influence of one-dimensional chains. The interaction between the two subsystems is transferred along the c axis by the phonons of breathing mode, which causes the hybridization of the electronic bonds between these subsystems. The experimental works indicate that the existence of both the chains Cu(1)-O and their interaction with the superconducting plane of Cu(2)-O modify the temperature of the transition to the superconducting state. It is seen from the neutron scattering data that the rates of the interatomic distance dependencies on temperature are changed around 140 K and 90 K. The 'zig-zag' order in Cu(1)-O chains has been postulated but, on the other hand, the vibrations with a large amplitude only were reported. The bi-stabilized situation of the oxygen ions can be caused by the change of distance between these ions and the Ba ions. It leads to the appearance of a two-well potential. Its parameters depend on temperature and the dynamics of the oxygen ions' movement. They can induce the antipolar order, which can be, however, more or less chaotic. The investigation of the ferroelastic properties of Y-Ba-Cu-O samples lead to the conclusion that they are related to jumps of ions inside the given chain and not to a diffusion between different sites in the ab plane. Researchers deduce thus that the fluctuating oxygen ions from these chains create dipoles in the ab plane. They can be described with the pseudo-spin formalism/ - Pauli matrices/. The system can be described with the Ising model. The pseudo-spins interact with phonons and influence the superconductivity in the second
The relation between ferroelasticity and superconductivity
NASA Technical Reports Server (NTRS)
Molak, A.; Manka, R.
1991-01-01
The high-temperature superconductivity is explained widely by the layered crystal structure. The one- and two-dimensional subsystems and their interaction are investigated here. It is assumed that the high-T(sub c) superconductivity takes place in the two-dimensional subsystem and the increase of the phase transition temperature from 60 K up to 90 K is the consequence of turning on the influence of one-dimensional chains. The interaction between the two subsystems is transferred along the c axis by the phonons of breathing mode, which causes the hybridization of the electronic bonds between these subsystems. The experimental works indicate that the existence of both the chains Cu(1)-O and their interaction with the superconducting plane of Cu(2)-O modify the temperature of the transition to the superconducting state. It is seen from the neutron scattering data that the rates of the interatomic distance dependencies on temperature are changed around 240 K and 90 K. The 'zig-zag' order in Cu(1)-O chains has been postulated but, on the other hand, the vibrations with a large amplitude only were reported. The bi-stabilized situation of the oxygen ions can be caused by the change of distance between these ions and the Ba ions. It leads to the appearance of a two-well potential. Its parameters depend on temperature and the dynamics of the oxygen ions' movement. They can induce the antipolar order, which can be, however, more or less chaotic. The investigation of the ferroelastic properties of Y-Ba-Cu-O samples lead to the conclusion that they are related to jumps of ions inside the given chain and not to a diffusion between different sites in the ab plane. Researchers deduce, thus, that the fluctuating oxygen ions from these chains create dipoles in the ab plane. They can be described with the pseudo-spin formalism (- Pauli matrices). The system can be described with the Ising model. The pseudo-spins interact with phonons and influence the superconductivity in the second
Effects of grain size and disorder on domain wall propagation in CoFeB thin films
NASA Astrophysics Data System (ADS)
Voto, Michele; Lopez-Diaz, Luis; Torres, Luis
2016-05-01
Micromagnetic simulations are used to investigate the effect of disorder on field-driven domain wall motion in perpendicularly magnetized CoFeB thin films. It is found that some degree of inhomogeneity in the form of an irregular grain structure needs to be introduced in the model in order to account for the domain wall velocities measured experimentally, even for applied fields much larger than the finite propagation field induced by weak disorder in the film. Moreover, the details of this grain structure have a large impact on domain wall motion in this flow regime. In particular, it is found that, for a fixed applied field, domain wall velocity rapidly increases with grain size up to a diameter of 40 nm, above which it slowly decreases. This is explained showing that the grain structure of the material introduces a new form of dissipation of energy via spin wave emission during domain wall propagation. We focus on the relation between grain size and domain wall velocity, finding that the frequency of emission of spin waves packets during domain wall motion depends on the grain size and affects directly the domain wall velocity of propagation.
High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques
NASA Astrophysics Data System (ADS)
Gomonay, O.; Jungwirth, T.; Sinova, J.
2016-07-01
We demonstrate the possibility to drive an antiferromagnetic domain wall at high velocities by fieldlike Néel spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sublattice of the antiferromagnet and whose orientation depends primarily on the current direction, giving them their fieldlike character. The domain wall velocities that can be achieved by this mechanism are 2 orders of magnitude greater than the ones in ferromagnets. This arises from the efficiency of the staggered spin-orbit fields to couple to the order parameter and from the exchange-enhanced phenomena in antiferromagnetic texture dynamics, which leads to a low domain wall effective mass and the absence of a Walker breakdown limit. In addition, because of its nature, the staggered spin-orbit field can lift the degeneracy between two 180° rotated states in a collinear antiferromagnet, and it provides a force that can move such walls and control the switching of the states.
Optimized cobalt nanowires for domain wall manipulation imaged by in situ Lorentz microscopy
Rodriguez, L. A.; Magen, C.; Snoeck, E.; Gatel, C.; Serrano-Ramon, L.; and others
2013-01-14
Direct observation of domain wall (DW) nucleation and propagation in focused electron beam induced deposited Co nanowires as a function of their dimensions was carried out by Lorentz microscopy (LTEM) upon in situ application of magnetic field. Optimal dimensions favoring the unambiguous DW nucleation/propagation required for applications were found in 500-nm-wide and 13-nm-thick Co nanowires, with a maximum nucleation field and the largest gap between nucleation and propagation fields. The internal DW structures were resolved using the transport-of-intensity equation formalism in LTEM images and showed that the optimal nanowire dimensions correspond to the crossover between the nucleation of transverse and vortex walls.
Tunneling decay of false domain walls: The silence of the lambs
NASA Astrophysics Data System (ADS)
Haberichter, Mareike; MacKenzie, Richard; Paranjape, M. B.; Ung, Yvan
2016-04-01
We study the decay of "false" domain walls, that is, metastable states of the quantum theory where the true vacuum is trapped inside the wall with the false vacuum outside. We consider a theory with two scalar fields, a shepherd field and a field of sheep. The shepherd field serves to herd the solitons of the sheep field so that they are nicely bunched together. However, quantum tunnelling of the shepherd field releases the sheep to spread out uncontrollably. We show how to calculate the tunnelling amplitude for such a disintegration.
Light domain walls, massive neutrinos and the large scale structure of the Universe
NASA Technical Reports Server (NTRS)
Massarotti, Alessandro
1991-01-01
Domain walls generated through a cosmological phase transition are considered, which interact nongravitationally with light neutrinos. At a redshift z greater than or equal to 10(exp 4), the network grows rapidly and is virtually decoupled from the matter. As the friction with the matter becomes dominant, a comoving network scale close to that of the comoving horizon scale at z of approximately 10(exp 4) gets frozen. During the later phases, the walls produce matter wakes of a thickness d of approximately 10h(exp -1)Mpc, that may become seeds for the formation of the large scale structure observed in the Universe.
Douglas, A. M.; Kumar, A.; Gregg, J. M.; Whatmore, R. W.
2015-10-26
Conducting atomic force microscopy images of bulk semiconducting BaTiO{sub 3} surfaces show clear stripe domain contrast. High local conductance correlates with strong out-of-plane polarization (mapped independently using piezoresponse force microscopy), and current-voltage characteristics are consistent with dipole-induced alterations in Schottky barriers at the metallic tip-ferroelectric interface. Indeed, analyzing current-voltage data in terms of established Schottky barrier models allows relative variations in the surface polarization, and hence the local domain structure, to be determined. Fitting also reveals the signature of surface-related depolarizing fields concentrated near domain walls. Domain information obtained from mapping local conductance appears to be more surface-sensitive than that from piezoresponse force microscopy. In the right materials systems, local current mapping could therefore represent a useful complementary technique for evaluating polarization and local electric fields with nanoscale resolution.
Ma, Zhenhe; Dou, Shidan; Zhao, Yuqian; Guo, Ce; Liu, Jian; Wang, Qiaoyun; Xu, Tao; Wang, Ruikang K; Wang, Yi
2015-11-01
The ability to measure in vivo wall strain in embryonic hearts is important for fully understanding the mechanisms of cardiac development. Optical coherence tomography (OCT) is a powerful tool for the three-dimensional imaging of complex myocardial activities in early-stage embryonic hearts with high spatial and temporal resolutions. We describe a method to analyze periodic deformations of myocardial walls and evaluate in vivo myocardial wall strains with a high-speed spectral domain OCT system. We perform four-dimensional scanning on the outflow tract (OFT) of chick embryonic hearts and determine a special cross-section in which the OFT can be approximated as an annulus by analyzing Doppler blood-flow velocities. For each image acquired at the special cross-section, the annular myocardial wall is segmented with a semiautomatic boundary-detection algorithm, and the fluctuation myocardial wall thickness is calculated from the area and mean circumference of the myocardial wall. The experimental results shown with the embryonic chick hearts demonstrate that the proposed method is a useful tool for studying the biomechanical characteristics of embryonic hearts.
Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films
Marincel, Daniel M.; Zhang, Huairuo; Jesse, Stephen; Belianinov, Alex; Okatan, Mahmut B.; Kalinin, Sergei V.; Rainforth, W. Mark; Reaney, Ian M.; Randall, Clive A.; Trolier-McKinstry, Susan
2015-03-21
Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O_{3} films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. Lastly, the observed nonlinear response was correlated to the domain structure imaged in cross section by transmission electron microscopy.
Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films
Marincel, Daniel M.; Zhang, Huairuo; Jesse, Stephen; ...
2015-03-21
Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. Lastly, the observed nonlinear response was correlated to the domain structure imaged in cross section by transmission electron microscopy.
Switching local magnetization by electric-field-induced domain wall motion
NASA Astrophysics Data System (ADS)
Kakizakai, Haruka; Ando, Fuyuki; Koyama, Tomohiro; Yamada, Kihiro; Kawaguchi, Masashi; Kim, Sanghoon; Kim, Kab-Jin; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo
2016-06-01
Electric field effect on magnetism is an appealing technique for manipulating magnetization at a low energy cost. Here, we show that the local magnetization of an ultrathin Co film can be switched by simply applying a gate electric field without the assistance of any external magnetic field or current flow. The local magnetization switching is explained by nucleation and annihilation of magnetic domains through domain wall motion induced by the electric field. Our results lead to external-field-free and ultralow-energy spintronic applications.
Xu, Qingping; Liu, Xueqian W.; Patin, Delphine; Farr, Carol L.; Grant, Joanna C.; Chiu, Hsiu-Ju; Jaroszewski, Lukasz; Knuth, Mark W.; Godzik, Adam; Lesley, Scott A.; Elsliger, Marc-André; Deacon, Ashley M.
2015-01-01
ABSTRACT Bacterial SH3 (SH3b) domains are commonly fused with papain-like Nlp/P60 cell wall hydrolase domains. To understand how the modular architecture of SH3b and NlpC/P60 affects the activity of the catalytic domain, three putative NlpC/P60 cell wall hydrolases were biochemically and structurally characterized. These enzymes all have γ-d-Glu-A2pm (A2pm is diaminopimelic acid) cysteine amidase (or dl-endopeptidase) activities but with different substrate specificities. One enzyme is a cell wall lysin that cleaves peptidoglycan (PG), while the other two are cell wall recycling enzymes that only cleave stem peptides with an N-terminal l-Ala. Their crystal structures revealed a highly conserved structure consisting of two SH3b domains and a C-terminal NlpC/P60 catalytic domain, despite very low sequence identity. Interestingly, loops from the first SH3b domain dock into the ends of the active site groove of the catalytic domain, remodel the substrate binding site, and modulate substrate specificity. Two amino acid differences at the domain interface alter the substrate binding specificity in favor of stem peptides in recycling enzymes, whereas the SH3b domain may extend the peptidoglycan binding surface in the cell wall lysins. Remarkably, the cell wall lysin can be converted into a recycling enzyme with a single mutation. PMID:26374125
Single domain wall manipulation in curved nanowires using a mobile, local, circular field
NASA Astrophysics Data System (ADS)
Shortt, Madeline; Bickel, Jessica; Khan, Mina; Tuominen, Mark; Aidala, Katherine
2014-03-01
Ferromagnetic nanostructures present exciting physics with a range of potential applications in data storage devices, such as magnetoresistive random access memory (MRAM). These proposals require precise control and understanding of domain wall (DW) movement and interactions. We developed a technique that generates a local circular Oersted field at a precise location by applying current through the tip of the atomic force microscope (AFM). We previously used this technique to control DW motion in nanorings. We extend this method to control individual DW movement in curved nanowires by placing the tip near a 180 DW at the vertex of a curved wire and generating a local field. In this way, we can examine the motion of domain walls through regions with different curvature and the effects of pinning. This work was supported in part by NSF DMR-1207924 and the UMass Center for Hierarchical Manufacturing, NSF CMMI-1025020.
Quenched domain wall QCD with DBW2 gauge action toward nucleon decay matrix element calculation
NASA Astrophysics Data System (ADS)
Aoki, Yasumichi
2001-10-01
The domain wall fermion action is a promising way to control chiral symmetry in lattice gauge theory. By the good chiral symmetry of this approach even at finite lattice spacing, one is able to extract hadronic matrix elements, like kaon weak matrix elements, for which the symmetry is extremely important. Ordinary fermions with poor chiral symmetry make calculation difficult because of the large mixing of operators with different chiral structure. Even though the domain wall fermion action with the simple Wilson gauge action has a good chiral symmetry, one can further improve the symmetry by using a different gauge action. We take a non-perturbatively improved action, the DBW2 action of the QCD Taro group. Hadron masses are systematically examined for a range of parameters. Application to nucleon decay matrix element is also discussed.
Spin accumulation and domain wall magnetoresistance in 35 nm Co wires
Ebels; Radulescu; Henry; Piraux; Ounadjela
2000-01-31
An enhancement of the resistance due to the presence of only one or two isolated domain walls is clearly evidenced by transport measurements in 35 nm epitaxial Co wires, 20 &mgr;m long. The deduced relative change in the resistivity is at least 1 order of magnitude larger than the one predicted from a model based on the mixing of spin channels occurring over the length scale of the domain wall width [P. M. Levy and S. Zhang, Phys. Rev. Lett. 79, 5110 (1997)]. This inconsistency can be resolved by taking the effect of spin accumulation into account, which scales in the case of Co over the much larger distance of the spin diffusion length.
Kondo effect from a Lorentz-violating domain wall description of superconductivity
NASA Astrophysics Data System (ADS)
Bazeia, D.; Brito, F. A.; Mota-Silva, J. C.
2016-11-01
We extend recent results on domain wall description of superconductivity in an Abelian Higgs model by introducing a particular Lorentz-violating term. The temperature of the system is interpreted through the fact that the soliton following accelerating orbits is a Rindler observer experiencing a thermal bath. We show that this term can be associated with the Kondo effect, that is, the Lorentz-violating parameter is closely related to the concentration of magnetic impurities living on a superconducting domain wall. We also found that the critical temperature decreasing with the impurity concentration as a non-single-valued function, for the case TK
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures
NASA Astrophysics Data System (ADS)
Lei, Na; Devolder, Thibaut; Agnus, Guillaume; Aubert, Pascal; Daniel, Laurent; Kim, Joo-Von; Zhao, Weisheng; Trypiniotis, Theodossis; Cowburn, Russell P.; Chappert, Claude; Ravelosona, Dafiné; Lecoeur, Philippe
2013-01-01
The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.
Domain wall interactions due to vacuum Dirac field fluctuations in 2 +1 dimensions
NASA Astrophysics Data System (ADS)
Fosco, C. D.; Mazzitelli, F. D.
2016-07-01
We evaluate quantum effects due to a two-component Dirac field in 2 +1 spacetime dimensions, coupled to domain-wall-like defects with a smooth shape. We show that these effects induce nontrivial contributions to the (shape-dependent) energy of the domain walls. For a single defect, we study the divergences in the corresponding self-energy, and also consider the role of the massless zero mode—corresponding to the Callan-Harvey mechanism—by coupling the Dirac field to an external gauge field. For two defects, we show that the Dirac field induces a nontrivial, Casimir-like effect between them, and we provide an exact expression for that interaction in the case of two straight-line parallel defects. As is the case for the Casimir interaction energy, the result is finite and unambiguous.
The Stability of Fake Flat Domain Walls on Kähler Manifold
NASA Astrophysics Data System (ADS)
Akbar, F. T.; Wijaya, R. N.; Gunara, B. E.
2016-08-01
In this paper, we study the stability of flat fake domain walls solution of fake N = 1 supergravity in d + 1 dimensions with Kahler surface as the sigma model. We start with Lagrangian for N = 1 fake supergravity which is coupling between gravity and complex scalar in d + 1 dimensions with scalar potential turned on. Then, as in supergravity theory, we demand that the scalar fields span the Kahler manifold. The equations of motion for fields can be reduced into first order equations by defining the superpotential and the resulting equations are called the projection equation and the fake BPS equation. Finally, we discuss about the stability of flat fake domain walls by investigating the critical points of the superpotential and the scalar potential.
Motion of Domain Walls and the Dynamics of Kinks in the Magnetic Peierls Potential
NASA Astrophysics Data System (ADS)
Buijnsters, F. J.; Fasolino, A.; Katsnelson, M. I.
2014-11-01
We study the dynamics of magnetic domain walls in the Peierls potential due to the discreteness of the crystal lattice. The propagation of a narrow domain wall (comparable to the lattice parameter) under the effect of a magnetic field proceeds through the formation of kinks in its profile. We predict that, despite the discreteness of the system, such kinks can behave like sine-Gordon solitons in thin films of materials such as yttrium iron garnets, and we derive general conditions for other materials. In our simulations, we also observe long-lived breathers. We provide analytical expressions for the effective mass and limiting velocity of the kink in excellent agreement with our numerical results.
Quantum Domain Walls Induce Incommensurate Supersolid Phase on the Anisotropic Triangular Lattice
NASA Astrophysics Data System (ADS)
Zhang, Xue-Feng; Hu, Shijie; Pelster, Axel; Eggert, Sebastian
2016-11-01
We investigate the extended hard-core Bose-Hubbard model on the triangular lattice as a function of spatial anisotropy with respect to both hopping and nearest-neighbor interaction strength. At half-filling the system can be tuned from decoupled one-dimensional chains to a two-dimensional solid phase with alternating density order by adjusting the anisotropic coupling. At intermediate anisotropy, however, frustration effects dominate and an incommensurate supersolid phase emerges, which is characterized by incommensurate density order as well as an anisotropic superfluid density. We demonstrate that this intermediate phase results from the proliferation of topological defects in the form of quantum bosonic domain walls. Accordingly, the structure factor has peaks at wave vectors, which are linearly related to the number of domain walls in a finite system in agreement with extensive quantum Monte Carlo simulations. We discuss possible connections with the supersolid behavior in the high-temperature superconducting striped phase.
Low field domain wall dynamics in artificial spin-ice basis structure
Kwon, J.; Goolaup, S.; Lim, G. J.; Kerk, I. S.; Lew, W. S.; Chang, C. H.; Roy, K.
2015-10-28
Artificial magnetic spin-ice nanostructures provide an ideal platform for the observation of magnetic monopoles. The formation of a magnetic monopole is governed by the motion of a magnetic charge carrier via the propagation of domain walls (DWs) in a lattice. To date, most experiments have been on the static visualization of DW propagation in the lattice. In this paper, we report on the low field dynamics of DW in a unit spin-ice structure measured by magnetoresistance changes. Our results show that reversible DW propagation can be initiated within the spin-ice basis. The initial magnetization configuration of the unit structure strongly influences the direction of DW motion in the branches. Single or multiple domain wall nucleation can be induced in the respective branches of the unit spin ice by the direction of the applied field.
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures
Lei, Na; Devolder, Thibaut; Agnus, Guillaume; Aubert, Pascal; Daniel, Laurent; Kim, Joo-Von; Zhao, Weisheng; Trypiniotis, Theodossis; Cowburn, Russell P.; Chappert, Claude; Ravelosona, Dafiné; Lecoeur, Philippe
2013-01-01
The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices. PMID:23340418
Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls
NASA Astrophysics Data System (ADS)
Currivan-Incorvia, J. A.; Siddiqui, S.; Dutta, S.; Evarts, E. R.; Zhang, J.; Bono, D.; Ross, C. A.; Baldo, M. A.
2016-01-01
Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.
Lei, Na; Devolder, Thibaut; Agnus, Guillaume; Aubert, Pascal; Daniel, Laurent; Kim, Joo-Von; Zhao, Weisheng; Trypiniotis, Theodossis; Cowburn, Russell P; Chappert, Claude; Ravelosona, Dafiné; Lecoeur, Philippe
2013-01-01
The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.
Measurements of nanoscale domain wall flexing in a ferromagnetic thin film.
Balk, A L; Nowakowski, M E; Wilson, M J; Rench, D W; Schiffer, P; Awschalom, D D; Samarth, N
2011-08-12
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga(1-x)Mn(x)As, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be ∼10(14) cm(-3). Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Our data provide evidence for a much higher intrinsic domain wall mobility for flexing than previously observed in optically probed μm scale measurements.
Localization and chiral symmetry in 2+1 flavor domain wall QCD
David J. Antonio; Kenneth C. Bowler; Peter A. Boyle; Norman H. Christ; Michael A. Clark; Saul D. Cohen; Chris Dawson; Alistair Hart; Balint Joó; Chulwoo Jung; Richard D. Kenway; Shu Li; Meifeng Lin; Robert D. Mawhinney; Christopher M. Maynard; Shigemi Ohta; Robert J. Tweedie; Azusa Yamaguchi
2008-01-01
We present results for the dependence of the residual mass of domain wall fermions (DWF) on the size of the fifth dimension and its relation to the density and localization properties of low-lying eigenvectors of the corresponding hermitian Wilson Dirac operator relevant to simulations of 2+1 flavor domain wall QCD. Using the DBW2 and Iwasaki gauge actions, we generate ensembles of configurations with a $16^3\\times 32$ space-time volume and an extent of 8 in the fifth dimension for the sea quarks. We demonstrate the existence of a regime where the degree of locality, the size of chiral symmetry breaking and the rate of topology change can be acceptable for inverse lattice spacings $a^{-1} \\ge 1.6$ GeV.
NASA Astrophysics Data System (ADS)
Kameni Ntichi, Abelin; Modave, Axel; Boubekeur, Mohamed; Preault, Valentin; Pichon, Lionel; Geuzaine, Christophe
2013-11-01
This article presents a time domain discontinuous Galerkin method applied for solving the con-servative form of Maxwells' equations and computing the radiated fields in electromagnetic compatibility problems. The results obtained in homogeneous media for the transverse magnetic waves are validated in two cases. We compare our solution to an analytical solution of Maxwells' equations based on characteristic method. Our results on shielding effectiveness of a conducting wall are same as those obtained from analytical expression in frequency domain. The propagation in heterogeneous medium is explored. The shielding effectiveness of a composite wall partially filled by circular conductives inclusions is computed. The proposed results are in conformity with the classical predictive homogenization rules. Contribution to the Topical Issue "Numelec 2012", Edited by Adel Razek.
Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls
Currivan-Incorvia, J. A.; Siddiqui, S.; Dutta, S.; Evarts, E. R.; Zhang, J.; Bono, D.; Ross, C. A.; Baldo, M. A.
2016-01-01
Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation. PMID:26754412
Lattice super-Yang-Mills using domain wall fermions in the chiral limit
Giedt, Joel; Brower, Richard; Catterall, Simon; Fleming, George T.; Vranas, Pavlos
2009-01-15
Lattice N=1 super-Yang-Mills formulated using Ginsparg-Wilson fermions provides a rigorous nonperturbative definition of the continuum theory that requires no fine-tuning as the lattice spacing is reduced to zero. Domain wall fermions are one explicit scheme for achieving this and using them we have performed large-scale Monte Carlo simulations of the theory for gauge group SU(2). We have measured the gaugino condensate, static potential, Creutz ratios, and residual mass for several values of the domain wall separation L{sub s}, four-dimensional lattice volume, and two values of the bare gauge coupling. With this data we are able to extrapolate the gaugino condensate to the chiral limit, to express it in physical units, and to establish important benchmarks for future studies of super-Yang-Mills on the lattice.
Motion of domain walls and the dynamics of kinks in the magnetic Peierls potential.
Buijnsters, F J; Fasolino, A; Katsnelson, M I
2014-11-21
We study the dynamics of magnetic domain walls in the Peierls potential due to the discreteness of the crystal lattice. The propagation of a narrow domain wall (comparable to the lattice parameter) under the effect of a magnetic field proceeds through the formation of kinks in its profile. We predict that, despite the discreteness of the system, such kinks can behave like sine-Gordon solitons in thin films of materials such as yttrium iron garnets, and we derive general conditions for other materials. In our simulations, we also observe long-lived breathers. We provide analytical expressions for the effective mass and limiting velocity of the kink in excellent agreement with our numerical results.
Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls.
Currivan-Incorvia, J A; Siddiqui, S; Dutta, S; Evarts, E R; Zhang, J; Bono, D; Ross, C A; Baldo, M A
2016-01-12
Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.
Bottom hadrons from lattice QCD with domain wall and NRQCD fermions
Stefan Meinel, William Detmold, C.-J. David Lin, Matthew Wingate
2009-07-01
Dynamical 2+1 flavor lattice QCD is used to calculate the masses of bottom hadrons, including B mesons, singly and doubly bottom baryons, and for the first time also the triply-bottom baryon Omega{sub bbb}. The domain wall action is used for the up-, down-, and strange quarks (both valence and sea), while the bottom quark is implemented with non-relativistic QCD. A calculation of the bottomonium spectrum is also presented.
Quantum Decay of the 'False Vacuum' and Pair Creation of Soliton Domain Walls
Miller, John H. Jr.
2011-03-28
Quantum decay of metastable states ('false vacua') has been proposed as a mechanism for bubble nucleation of new universes and phase transitions in the early universe. Experiments indicate the occurrence of false vacuum decay, within a region bounded by soliton domain walls that nucleate via quantum tunneling, in a highly anisotropic condensed matter system. This phenomenon provides a compelling example of false vacuum decay in the laboratory.
Renormalization of domain-wall bilinear operators with short-distance current correlators
NASA Astrophysics Data System (ADS)
Tomii, M.; Cossu, G.; Fahy, B.; Fukaya, H.; Hashimoto, S.; Kaneko, T.; Noaki, J.; Jlqcd Collaboration
2016-09-01
We determine the renormalization constants for flavor nonsinglet fermion bilinear operators of Möbius domain-wall fermions. The renormalization condition is imposed on the correlation functions in the coordinate space, such that the nonperturbative lattice calculation reproduces the perturbatively calculated counterpart at short distances. The perturbative expansion is precise as the coefficients are available up to O (αs4). We employ 2 +1 -flavor lattice ensembles at three lattice spacings in the range 0.044-0.080 fm.
Swift thermal steering of domain walls in ferromagnetic MnBi stripes
Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal
2016-01-01
We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097
BLUM,T.; SONI,A.
2007-03-15
The workshop was held to mark the 10th anniversary of the first numerical simulations of QCD using domain wall fermions initiated at BNL. It is very gratifying that in the intervening decade widespread use of domain wall and overlap fermions is being made. It therefore seemed appropriate at this stage for some ''communal introspection'' of the progress that has been made, hurdles that need to be overcome, and physics that can and should be done with chiral fermions. The meeting was very well attended, drawing about 60 registered participants primarily from Europe, Japan and the US. It was quite remarkable that pioneers David Kaplan, Herbert Neuberger, Rajamani Narayanan, Yigal Shamir, Sinya Aoki, and Pavlos Vranas all attended the workshop. Comparisons between domain wall and overlap formulations, with their respective advantages and limitations, were discussed at length, and a broad physics program including pion and kaon physics, the epsilon regime, nucleon structure, and topology, among others, emerged. New machines and improved algorithms have played a key role in realizing realistic dynamical fermion lattice simulations (small quark mass, large volume, and so on), so much in fact that measurements are now as costly. Consequently, ways to make the measurements more efficient were also discussed. We were very pleased to see the keen and ever growing interest in chiral fermions in our community and the significant strides our colleagues have made in bringing chiral fermions to the fore of lattice QCD calculations. Their contributions made the workshop a success, and we thank them deeply for sharing their time and ideas. Finally, we must especially acknowledge Norman Christ and Bob Mawhinney for their early and continued collaboration without which the success of domain wall fermions would not have been possible.
Universal Pinning Energy Barrier for Driven Domain Walls in Thin Ferromagnetic Films
NASA Astrophysics Data System (ADS)
Jeudy, V.; Mougin, A.; Bustingorry, S.; Savero Torres, W.; Gorchon, J.; Kolton, A. B.; Lemaître, A.; Jamet, J.-P.
2016-07-01
We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.
Swift thermal steering of domain walls in ferromagnetic MnBi stripes
NASA Astrophysics Data System (ADS)
Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal
2016-04-01
We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.
Discrete domain wall positioning due to pinning in current driven motion along nanowires.
Jiang, Xin; Thomas, Luc; Moriya, Rai; Parkin, Stuart S P
2011-01-12
Racetrack memory is a novel storage-class memory device in which a series of domain walls (DWs), representing zeros and ones, are shifted to and fro by current pulses along magnetic nanowires. Here we show, by precise measurements of the DW's position using spin-valve nanowires, that these positions take up discrete values. This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire.
Universal Pinning Energy Barrier for Driven Domain Walls in Thin Ferromagnetic Films.
Jeudy, V; Mougin, A; Bustingorry, S; Savero Torres, W; Gorchon, J; Kolton, A B; Lemaître, A; Jamet, J-P
2016-07-29
We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.
Swift thermal steering of domain walls in ferromagnetic MnBi stripes.
Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K U; Berakdar, Jamal
2016-04-14
We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.
NASA Astrophysics Data System (ADS)
Bourim, El Mostafa; Tanaka, Hidehiko; Gabbay, Maurice; Fantozzi, Gilbert; Cheng, Bo Lin
2002-05-01
Three undoped lead zirconate titanate (PZT) ceramics were prepared with compositions close to the morphotropic phase boundary: Pb(Zr0.50Ti0.50)O3, Pb(Zr0.52Ti0.48)O3, and Pb(Zr0.54Ti0.46)O3. Internal friction Q-1 and shear modulus G were measured versus temperature from 20 °C to 500 °C. Experiments were performed on an inverted torsional pendulum at low frequencies (0.1, 0.3, and 1 Hz). The ferroelectric-paraelectric phase transition results in a peak (P1) of Q-1 correlated with a sharp minimum M1 of G. Moreover the Q-1(T) curves show two relaxation peaks called R1 and R2 respectively, correlated with two shear modulus anomalies called A1 and A2 on the G(T) curves. The main features of the transition P1 peak are studied, they suggest that its behavior is similar to the internal friction peaks associated with martensitic transformation. The relaxation peak, R1 and R2 are both attributed to motion of domain walls (DWs), and can be analyzed by thermal activated process described by Arrhenius law. The R2 peak is demonstrated to be due to the interaction of domain walls and oxygen vacancies because it depends on oxygen vacancy concentration and electrical polarization. However, the R1 peak is more complex; its height is found to be increased as stress amplitude and heating rate increase. It seems that the R1 peak is influenced by three mechanisms: (i) relaxation due to DW-point defects interaction, (ii) variation of domain wall density, and (iii) domain wall depinning from point defect clusters.
THE PARITY PARTNER OF THE NUCLEON IN QUENCHED QCD WITH DOMAIN WALL FERMIONS
SASAKI,S.
2000-07-12
The authors present preliminary results for the mass spectrum of the nucleon and its low-lying excited states from quenched lattice QCD using the domain wall fermion method which preserves the chiral symmetry at finite lattice cutoff. Definite mass splitting is observed between the nucleon and its parity partner. This splitting grows with decreasing valence quark mass. They also present preliminary data regarding the first positive-parity excited state.
Domain wall of a ferromagnet on a three-dimensional topological insulator
Wakatsuki, Ryohei; Ezawa, Motohiko; Nagaosa, Naoto
2015-01-01
Topological insulators (TIs) show rich phenomena and functions which can never be realized in ordinary insulators. Most of them come from the peculiar surface or edge states. Especially, the quantized anomalous Hall effect (QAHE) without an external magnetic field is realized in the two-dimensional ferromagnet on a three-dimensional TI which supports the dissipationless edge current. Here we demonstrate theoretically that the domain wall of this ferromagnet, which carries edge current, is charged and can be controlled by the external electric field. The chirality and relative stability of the Neel wall and Bloch wall depend on the position of the Fermi energy as well as the form of the coupling between the magnetic moments and orbital of the host TI. These findings will pave a path to utilize the magnets on TI for the spintronics applications. PMID:26323943
Domain wall of a ferromagnet on a three-dimensional topological insulator.
Wakatsuki, Ryohei; Ezawa, Motohiko; Nagaosa, Naoto
2015-09-01
Topological insulators (TIs) show rich phenomena and functions which can never be realized in ordinary insulators. Most of them come from the peculiar surface or edge states. Especially, the quantized anomalous Hall effect (QAHE) without an external magnetic field is realized in the two-dimensional ferromagnet on a three-dimensional TI which supports the dissipationless edge current. Here we demonstrate theoretically that the domain wall of this ferromagnet, which carries edge current, is charged and can be controlled by the external electric field. The chirality and relative stability of the Neel wall and Bloch wall depend on the position of the Fermi energy as well as the form of the coupling between the magnetic moments and orbital of the host TI. These findings will pave a path to utilize the magnets on TI for the spintronics applications.
Δmix parameter in the overlap on domain-wall mixed action
NASA Astrophysics Data System (ADS)
Lujan, M.; Alexandru, A.; Chen, Y.; Draper, T.; Freeman, W.; Gong, M.; Lee, F. X.; Li, A.; Liu, K. F.; Mathur, N.
2012-07-01
A direct calculation of the mixed action parameter Δmix with valence overlap fermions on a domain-wall fermion sea is presented. The calculation is performed on four ensembles of the 2+1 flavor domain-wall gauge configurations: 243×64 (aml=0.005, a=0.114fm) and 323×64 (aml=0.004, 0.006, 0.008, a=0.085fm). For pion masses close to 300 MeV we find Δmix=0.030(6)GeV4 at a=0.114fm and Δmix=0.033(12)GeV4 at a=0.085fm. The results are quite independent of the lattice spacing and they are significantly smaller than the results for valence domain-wall fermions on asqtad sea or those of valence overlap fermions on clover sea. Combining the results extracted from these two ensembles, we get Δmix=0.030(6)(5)GeV4, where the first error is statistical and the second is the systematic error associated with the fitting method.
All-electrical deterministic single domain wall generation for on-chip applications
Guite, Chinkhanlun; Kerk, I. S.; Sekhar, M. Chandra; Ramu, M.; Goolaup, S.; Lew, W. S.
2014-01-01
Controlling domain wall (DW) generation and dynamics behaviour in ferromagnetic nanowire is critical to the engineering of domain wall-based non-volatile logic and magnetic memory devices. Previous research showed that DW generation suffered from a random or stochastic nature and that makes the realization of DW based device a challenging task. Conventionally, stabilizing a Néel DW requires a long pulsed current and the assistance of an external magnetic field. Here, we demonstrate a method to deterministically produce single DW without having to compromise the pulse duration. No external field is required to stabilize the DW. This is achieved by controlling the stray field magnetostatic interaction between a current-carrying strip line generated DW and the edge of the nanowire. The natural edge-field assisted domain wall generation process was found to be twice as fast as the conventional methods and requires less current density. Such deterministic DW generation method could potentially bring DW device technology, a step closer to on-chip application. PMID:25500734
Logic and memory concepts for all-magnetic computing based on transverse domain walls
NASA Astrophysics Data System (ADS)
Vandermeulen, J.; Van de Wiele, B.; Dupré, L.; Van Waeyenberge, B.
2015-06-01
We introduce a non-volatile digital logic and memory concept in which the binary data is stored in the transverse magnetic domain walls present in in-plane magnetized nanowires with sufficiently small cross sectional dimensions. We assign the digital bit to the two possible orientations of the transverse domain wall. Numerical proofs-of-concept are presented for a NOT-, AND- and OR-gate, a FAN-out as well as a reading and writing device. Contrary to the chirality based vortex domain wall logic gates introduced in Omari and Hayward (2014 Phys. Rev. Appl. 2 044001), the presented concepts remain applicable when miniaturized and are driven by electrical currents, making the technology compatible with the in-plane racetrack memory concept. The individual devices can be easily combined to logic networks working with clock speeds that scale linearly with decreasing design dimensions. This opens opportunities to an all-magnetic computing technology where the digital data is stored and processed under the same magnetic representation.
Domain-wall dynamics in translationally nonivariant nanowires: theory and applications.
Tretiakov, O A; Liu, Y; Abanov, Ar
2012-06-15
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations along the wire, such as disorder or change in the wire shape. We show that the effective equations of motion are very general and do not depend on the model details. As an example of their use, we consider an hourglass-shaped nanostrip in detail. A transverse domain wall is trapped in the middle and has two stable magnetization directions. We study the switching between the two directions by short current pulses. We obtain the exact time dependence of the current pulses required to switch the magnetization with the minimal Ohmic losses per switching. Furthermore, we find how the Ohmic losses per switching depend on the switching time for the optimal current pulse. As a result, we show that as a magnetic memory device this nanodevice may be 10(5) times more energy efficient than the best modern devices.
Domain-wall pinning by local control of anisotropy in Pt/Co/Pt strips.
Franken, J H; Hoeijmakers, M; Lavrijsen, R; Swagten, H J M
2012-01-18
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions. This tool is used to experimentally study the field-induced switching of nanostrips which are locally irradiated. The boundary of the irradiated area indeed acts as a pinning barrier for the domain wall and the pinning strength increases with the anisotropy difference. Varying the thickness of the Co layer provides an additional way to tune the anisotropy, and it is shown that a thinner Co layer gives a higher starting anisotropy thereby allowing tunable DW pinning in a wider range of fields. Finally, we demonstrate that not only the anisotropy itself, but also the width of the anisotropy barrier can be tuned on the length scale of the domain wall.
NASA Astrophysics Data System (ADS)
Malovichko, G.; Grachev, V.; Andreev, V.; Nachal'Naya, T.
It was found by optical polarization microscopy and the EPR study that lithium niobate and tantalate crystals undergo irreversible lattice changes under anisotropic hydrostatic compression. Regions having different cell orientations were registered. The observed changes were explained in terms of "strain switching" of ferroelastic domains. Possible sequence of phase transitions in these crystals (Pm3m<->R (3) over bar3 c<->R 3 c) and the symmetry of the condensed soft modes ( R-25 and Gamma(15) , correspondingly) were obtained by the analysis of the Gibbs free energy under external pressure.
Technology Transfer Automated Retrieval System (TEKTRAN)
Staphylococcal peptidoglycan hydrolases are a potential new source of antimicrobials. A large subset of these proteins contain a C-terminal SH3b_5 cell wall binding domain that has been shown for some to be essential for accurate cell wall recognition and subsequent staphylolytic activity, properti...
A finite element model of ferroelectric/ferroelastic polycrystals
HWANG,STEPHEN C.; MCMEEKING,ROBERT M.
2000-02-17
A finite element model of polarization switching in a polycrystalline ferroelectric/ferroelastic ceramic is developed. It is assumed that a crystallite switches if the reduction in potential energy of the polycrystal exceeds a critical energy barrier per unit volume of switching material. Each crystallite is represented by a finite element with the possible dipole directions assigned randomly subject to crystallographic constraints. The model accounts for both electric field induced (i.e. ferroelectric) switching and stress induced (i.e. ferroelastic) switching with piezoelectric interactions. Experimentally measured elastic, dielectric, and piezoelectric constants are used consistently, but different effective critical energy barriers are selected phenomenologically. Electric displacement versus electric field, strain versus electric field, stress versus strain, and stress versus electric displacement loops of a ceramic lead lanthanum zirconate titanate (PLZT) are modeled well below the Curie temperature.
High Temperature Evaluation of New Ferroelastic Toughened Ceramic Materials
1988-02-01
2. A.V. Virkar and R.L.K. Matsumoto, "Toughening Mechanism in Tetragonal Zirconia Polycrystalline ( TZP ) Ceramics," to appear in Proceedings of the... zirconia polycrystalline ( TZP ) ceramics was investigated relative to the effect of various dopants (coded as dopants A, B and C in this report due to...transformation toughening are operative. Switching of x-ray peak intensities showed that the tetragonal zirconia used in the present study is ferroelastic
NASA Astrophysics Data System (ADS)
Wang, Yi; Nelson, Chris; Melville, Alexander; Winchester, Benjamin; Shang, Shunli; Liu, Zi-Kui; Schlom, Darrell G.; Pan, Xiaoqing; Chen, Long-Qing
2013-06-01
We determined the atomic structures and energies of 109°, 180°, and 71° domain walls in BiFeO3, combining density functional theory+U calculations and aberration-corrected transmission electron microscopy images. We find a substantial Bi sublattice shift and a rather uniform Fe sublattice across the walls. The calculated wall energies (γ) follow the sequence γ109<γ180<γ71 for the 109°, 180°, and 71° walls. We attribute the high 71° wall energy to an opposite tilting rotation of the oxygen octahedra and the low 109° wall energy to the opposite twisting rotation of the oxygen octahedra across the domain walls.
Head-to-head and tail-to-tail 180° domain walls in an isolated ferroelectric
NASA Astrophysics Data System (ADS)
Gureev, M. Y.; Tagantsev, A. K.; Setter, N.
2011-05-01
Head-to-head and tail-to-tail 180° domain walls in a finite isolated ferroelectric sample are theoretically studied using Landau theory. The full set of equations, suitable for numerical calculations, is developed. The explicit expressions for the polarization profile across the walls are derived for several limiting cases and wall widths are estimated. It is shown analytically that different regimes of screening and different dependences for the width of charged domain walls on the temperature and parameters of the system are possible, depending on spontaneous polarization and concentration of carriers in the material. It is shown that the half-width of charged domain walls in typical perovskites is about the nonlinear Thomas-Fermi screening length and about one order of magnitude larger than the half-width of neutral domain walls. The formation energies of head-to-head walls under different regimes of screening are obtained, neglecting the poling ability of the surface. In the nonlinear regimes of screening, this energy is equal to the energy necessary for the creation of electron-hole pairs in the amount sufficient to screen the spontaneous polarization, which is proportional to the band gap of the ferroelectric. It is shown that either head-to-head or tail-to-tail configurations can be energetically favorable in comparison with the monodomain state of the ferroelectric if the poling ability of the surface is large enough. If this is not the case, the existence of charged domain walls in bulk ferroelectrics is merely a result of the domain-growth kinetics. Formation energies of the other possible states, i.e., the multidomain state with antiparallel domains separated by neutral walls and the state with the zero polarization, were compared with the formation energy of the charged domain wall. It was shown that, at large enough sample thicknesses, a charged domain wall can be energetically favorable in comparison with the states mentioned above. This size effect
NASA Astrophysics Data System (ADS)
Krishnia, S.; Purnama, I.; Lew, W. S.
2016-12-01
In a patterned Co honeycomb spin ice structure, we show that violation in the ice-rule or magnetic monopoles, can be observed during a magnetization reversal process in 430 Oe≤H≤760 Oe magnetic field (H) range. The monopoles are shown to originate from the nucleation of domain walls at the edges, and they hop towards the other edge via the propagation of magnetic domain walls. The paths that the domain walls traveled or the Dirac strings, are shown to increase in length with magnetic fields increment and no random flipping of the bars are observed in the structure.
Domain Walls, near-BPS Bubbles and Probabilities in the Landscape
Ceresole, Anna; Dall'Agata, Gianguido; Giryavets, Alexander; Kallosh, Renata; Linde, Andrei; /Stanford U., Phys. Dept.
2006-06-27
We develop a theory of static BPS domain walls in stringy landscape and present a large family of BPS walls interpolating between different supersymmetric vacua. Examples include KKLT models, STU models, type IIB multiple flux vacua, and models with several Minkowski and AdS vacua. After the uplifting, some of the vacua become dS, whereas some others remain AdS. The near-BPS walls separating these vacua may be seen as bubble walls in the theory of vacuum decay. As an outcome of our investigation of the BPS walls, we found that the decay rate of dS vacua to a collapsing space with a negative vacuum energy can be quite large. The parts of space that experience a decay to a collapsing space, or to a Minkowski vacuum, never return back to dS space. The channels of irreversible vacuum decay serve as sinks for the probability flow. The existence of such sinks is a distinguishing feature of the landscape. We show that it strongly affects the probability distributions in string cosmology.
NASA Astrophysics Data System (ADS)
Zou, Xiaojing
We have fabricated, studied and compared the electrical and magnetic behavior of several sub-micron-sized polycrystalline and epitaxial chromium dioxide (CrO2) nanostructures, grown using selective-area growth technique. Magnetic domain structures were studied by magnetic force microscopy, and in-plane, lamellar domain structure with fragmented walls aligned along the magnetic easy axis direction have been observed, indicating the existence of a large magnetocrystalline anisotropy in epitaxial CrO2 nanostructures. Low-temperature transport measurements on nanowires have shown that the dc resistivity of polycrystalline CrO2 wires is strongly dependent on the linewidth. Below a critical temperature, a transition from a positive to a negative temperature coefficient of resistivity have been observed, which we attribute to a competition between the scattering of the conduction electrons inside the grains and scattering across the grain boundaries. Using a model based on grain boundary scattering, we estimate a mean transmission probability through the grain boundaries to be on the order of 10-1 . Furthermore, magnetoresistance (MR) measurement indicates that the MR behavior of polycrystalline CrO2 wires is dominated by the shape anisotropy; however, for epitaxial CrO2 wires, both the shape and magnetocrystalline anisotropy play important roles, and the resulting MR properties are found to be closely related to the orientation of the wire axis. By studying the MR curves, we inferred the internal magnetic domain structures in various single crystal CrO2 wires and found that the spin-dependent transport is much stronger across a grain boundary than a magnetic domain wall. We have also studied the magnetotransport properties of CrO2 nanoscale continuous contacts. Manipulating the domain walls using a large dc current in the contact area yields a magnetoresistance of up to 25%, which is the largest ever seen in a single ferromagnetic film. The single domain-wall
Néel walls between tailored parallel-stripe domains in IrMn/CoFe exchange bias layers
Ueltzhöffer, Timo Schmidt, Christoph; Ehresmann, Arno; Krug, Ingo; Nickel, Florian; Gottlob, Daniel
2015-03-28
Tailored parallel-stripe magnetic domains with antiparallel magnetizations in adjacent domains along the long stripe axis have been fabricated in an IrMn/CoFe Exchange Bias thin film system by 10 keV He{sup +}-ion bombardment induced magnetic patterning. Domain walls between these domains are of Néel type and asymmetric as they separate domains of different anisotropies. X-ray magnetic circular dichroism asymmetry images were obtained by x-ray photoelectron emission microscopy at the Co/Fe L{sub 3} edges at the synchrotron radiation source BESSY II. They revealed Néel-wall tail widths of 1 μm in agreement with the results of a model that was modified in order to describe such walls. Similarly obtained domain core widths show a discrepancy to values estimated from the model, but could be explained by experimental broadening. The rotation senses in adjacent walls were determined, yielding unwinding domain walls with non-interacting walls in this layer system.
Effect of microwaves on domain wall motion in thin Ni wires
NASA Astrophysics Data System (ADS)
Hong, Kimin; Giordano, N.
1996-03-01
We report new results on domain wall motion in thin (width and thickness ~ 300 ÅNi wires. The magnetoresistance exhibits discontinuities which we believe are associated with pinning and de-pinning of walls from structural defects, such as variations in the width of the sample. Upon repeated measurement, the de-pinning is found to occur over a narrow range of fields. The distribution of de-pinning fields, P(H), varies with temperature in a manner which suggests that de-pinning occurs via thermal activation at high temperatures, and quantum tunneling at low temperatures, with crossover between these two regimes at T ~ 2 - 6 K. We have also investigated the effect of a 30 GHz microwave field on P(H). In the thermal activation regime, microwaves have no effect on P(H), except through Joule heating. However, in the tunneling regime microwaves cause P(H) to split into several separate peaks. This behavior cannot be explained in terms of Joule heating, but suggests that the energy levels of a domain wall in a pinning well are quantized.
Burn, D. M. Atkinson, D.
2014-10-28
Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.
Modeling of Fracture in Ferroelastic Ceramics
NASA Astrophysics Data System (ADS)
Landis, Chad M.
Ferroelectric ceramics are used in applications ranging from actuators and sensors to ultrasonic motors. A significant shortcoming of these materials in structural applications is their inherent brittleness. Specifically, most ferroelectrics have fracture toughness levels on the order of K_{Ic} = 1 MPasqrt m . The characteristic of ferroelectric ceramics that makes them useful as smart materials is their ability to deform and change polarization irreversibly by the mechanism of domain switching. In a manner akin to transformation toughening, domain switching leads to R-curve behavior and toughness enhancement during crack growth in ferroelectrics. Hence, an understanding of the dissipation due to domain switching and the fracture mechanics governing these materials is crucial for the efficient design of ferroelectric devices.
The stability of steady motion of magnetic domain wall: Role of higher-order spin-orbit torques
He, Peng-Bin Yan, Han; Cai, Meng-Qiu; Li, Zai-Dong
2015-12-14
The steady motion of magnetic domain wall driven by spin-orbit torques is investigated analytically in the heavy/ferromagnetic metal nanowires for three cases with a current transverse to the in-plane and perpendicular easy axis, and along the in-plane easy axis. By the stability analysis of Walker wall profile, we find that if including the higher-order spin-orbit torques, the Walker breakdown can be avoided in some parameter regions of spin-orbit torques with a current transverse to or along the in-plane easy axis. However, in the case of perpendicular anisotropy, even considering the higher-order spin-orbit torques, the velocity of domain wall cannot be efficiently enhanced by the current. Furthermore, the direction of wall motion is dependent on the configuration and chirality of domain wall with a current along the in-plane easy axis or transverse to the perpendicular one. Especially, the direction of motion can be controlled by the initial chirality of domain wall. So, if only involving the spin-orbit mechanism, it is preferable to adopt the scheme of a current along the in-plane easy axis for enhancing the velocity and controlling the direction of domain wall.
NASA Astrophysics Data System (ADS)
Carpenter, M. A.; Salje, E. K. H.; Howard, Christopher J.
2012-06-01
manipulation of ferroelastic twinning by application of a magnetic field and for creation of materials in which the ferroelastic twin walls have quite different magnetic properties from the matrix in which they lie.
NASA Astrophysics Data System (ADS)
Lim, Ae Ran; Kim, Min Soo; Lim, Kye-Young
2016-08-01
This study uses nuclear magnetic resonance (NMR) techniques to examine the detailed changes in [N(C2H5)4]2CdCl4 around its phase transition at the temperature TC = 284 K. The chemical shifts and spin-lattice relaxation times in the rotating frame (T1ρ) were determined from 1H magic angle spinning (MAS) NMR and 13C cross-polarization (CP)/MAS NMR spectra. The two sets of inequivalent 1H and 13C nuclei in CH3 and CH2 were distinguished. A ferroelastic phase transition was observed at TC, without structural symmetry change. The phase transition is mainly attributed to the orientational ordering of the [N(C2H5)4]+ cations, and the spectral splitting at low temperature is associated with different ferroelastic domains.
Anomalous switching in Nb/Ru/Sr2RuO4 topological junctions by chiral domain wall motion
NASA Astrophysics Data System (ADS)
Anwar, M. S.; Nakamura, Taketomo; Yonezawa, S.; Yakabe, M.; Ishiguro, R.; Takayanagi, H.; Maeno, Y.
2013-08-01
A spontaneous symmetry breaking in a system often results in domain wall formation. The motion of such domain walls is utilized to realize novel devices like racetrack-memories, in which moving ferromagnetic domain walls store and carry information. Superconductors breaking time reversal symmetry can also form domains with degenerate chirality of their superconducting order parameter. Sr2RuO4 is the leading candidate of a chiral p-wave superconductor, expected to be accompanied by chiral domain structure. Here, we present that Nb/Ru/Sr2RuO4 topological superconducting-junctions, with which the phase winding of order parameter can be effectively probed by making use of real-space topology, exhibit unusual switching between higher and lower critical current states. This switching is well explained by chiral-domain-wall dynamics. The switching can be partly controlled by external parameters such as temperature, magnetic field and current. These results open up a possibility to utilize the superconducting chiral domain wall motion for future novel superconducting devices.
Nonadiabatic spin transfer torque in high anisotropy magnetic nanowires with narrow domain walls.
Boulle, O; Kimling, J; Warnicke, P; Kläui, M; Rüdiger, U; Malinowski, G; Swagten, H J M; Koopmans, B; Ulysse, C; Faini, G
2008-11-21
Current induced domain wall (DW) depinning of a narrow DW in out-of-plane magnetized (Pt/Co)_{3}/Pt multilayer elements is studied by magnetotransport. We find that for conventional measurements Joule heating effects conceal the real spin torque efficiency and so we use a measurement scheme at a constant sample temperature to unambiguously extract the spin torque contribution. From the variation of the depinning magnetic field with the current pulse amplitude we directly deduce the large nonadiabaticity factor in this material and we find that its amplitude is consistent with a momentum transfer mechanism.
Axial couplings of heavy hadrons from domain-wall lattice QCD
W. Detmold, C.J.D. Lin, S. Meinel
2011-12-01
We calculate matrix elements of the axial current for static-light mesons and baryons in lattice QCD with dynamical domain wall fermions. We use partially quenched heavy hadron chiral perturbation theory in a finite volume to extract the axial couplings g{sub 1}, g{sub 2}, and g{sub 3} from the data. These axial couplings allow the prediction of strong decay rates and enter chiral extrapolations of most lattice results in the b sector. Our calculations are performed with two lattice spacings and with pion masses down to 227 MeV.
Violation of chirality of the Möbius domain-wall Dirac operator from the eigenmodes
NASA Astrophysics Data System (ADS)
Cossu, Guido; Fukaya, Hidenori; Tomiya, Akio; Hashimoto, Shoji
2016-02-01
We investigate the effects of the violation of the Ginsparg-Wilson (GW) relation in the Möbius domain-wall fermion formulation on the lattice with finite fifth dimension. Using a decomposition in terms of the eigenmodes of its four-dimensional effective Dirac operator, we isolate the GW-violating terms for various physical quantities including the residual mass and the meson susceptibilities relevant for the effective restoration of the axial U(1) symmetry at finite temperature. Numerical result shows that the GW-violating effect is more significant, or even overwhelming, for the quantities that are dominated by the low-lying eigenmodes.
K(13) FORM FACTOR WITH TWO FLAVORS OF DYNAMICAL DOMAIN WALL QUARKS.
SONI, A.; DAWSON, T.; IZUBUCHI, T.; KANEKO, T.; SASAKI, S.
2005-07-25
We report on our calculation of K {yields} {pi} vector form factor by numerical simulations of two-flavor QCD on a 16{sup 3} x 32 x 12 lattice at a {approx_equal} 0.12 fm using domain-wall quarks and DBW2 glue. Our preliminary result at a single sea quark mass corresponding to m{sub PS}/m{sub V} {approx_equal} 0.53 shows a good agreement with previous estimate in quenched QCD and that from a phenomenological model.
Quark Contributions to Nucleon Momentum and Spin from Domain Wall fermion calculations
S. N. Syritsyn, J. R. Green, J. W. Negele, A. V. Pochinsky, M. Engelhardt, Ph. Hagler, B. Musch, W. Schroers
2011-12-01
We report contributions to the nucleon spin and momentum from light quarks calculated using dynamical domain wall fermions with pion masses down to 300 MeV and fine lattice spacing a=0.084 fm. Albeit without disconnected diagrams, we observe that spin and orbital angular momenta of both u and d quarks are opposite, almost canceling in the case of the d quark, which agrees with previous calculations using a mixed quark action. We also present the full momentum dependence of n=2 generalized form factors showing little variation with the pion mass.