Domain shape instabilities and dendrite domain growth in uniaxial ferroelectrics

NASA Astrophysics Data System (ADS)

Shur, Vladimir Ya.; Akhmatkhanov, Andrey R.

2018-01-01

The effects of domain wall shape instabilities and the formation of nanodomains in front of moving walls obtained in various uniaxial ferroelectrics are discussed. Special attention is paid to the formation of self-assembled nanoscale and dendrite domain structures under highly non-equilibrium switching conditions. All obtained results are considered in the framework of the unified kinetic approach to domain structure evolution based on the analogy with first-order phase transformation. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

Mechanical switching of ferroelectric domains beyond flexoelectricity

NASA Astrophysics Data System (ADS)

Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

2018-02-01

The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE PAGES

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

2017-11-01

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

Induction of relaxor state in ordinary ferroelectrics by isovalent ion substitution: A pretransitional martensitic texture case

NASA Astrophysics Data System (ADS)

Lente, M. H.; Moreira, E. N.; Garcia, D.; Eiras, J. A.; Neves, P. P.; Doriguetto, A. C.; Mastelaro, V. R.; Mascarenhas, Y. P.

2006-02-01

The understanding of the structural origin of relaxor ferroelectrics has been doubtlessly a long-standing puzzle in the field of ferroelectricity. Thus, motivated by the interest in improving the comprehension of this important issue, it a framework is proposed for explaining the origin of the relaxor state in ordinary ferroelectrics induced via the isovalent-ion substitution. Based on the martensitic transformation concepts, it is proposed that the continuous addition of isovalent ions in a so-called normal ferroelectric decreases considerably the elastic strain energy. This results in a gradual transformation of ferroelectric domain patterns from a micrometer polydomain structure (twins), through single domains, to nanometer-polar-“tweed” structures with glasslike behavior, that are, in turn, strongly driven by point defects and surface effects. The electrical interaction between these weakly coupled polar-tweed structures leads to a wide spectrum of relaxation times, thus resulting in a dielectric relaxation process, the signature of relaxor ferroelectrics.

Imaging Local Polarization in Ferroelectric Thin Films by Coherent X-Ray Bragg Projection Ptychography

NASA Astrophysics Data System (ADS)

Hruszkewycz, S. O.; Highland, M. J.; Holt, M. V.; Kim, Dongjin; Folkman, C. M.; Thompson, Carol; Tripathi, A.; Stephenson, G. B.; Hong, Seungbum; Fuoss, P. H.

2013-04-01

We used x-ray Bragg projection ptychography (BPP) to map spatial variations of ferroelectric polarization in thin film PbTiO3, which exhibited a striped nanoscale domain pattern on a high-miscut (001) SrTiO3 substrate. By converting the reconstructed BPP phase image to picometer-scale ionic displacements in the polar unit cell, a quantitative polarization map was made that was consistent with other characterization. The spatial resolution of 5.7 nm demonstrated here establishes BPP as an important tool for nanoscale ferroelectric domain imaging, especially in complex environments accessible with hard x rays.

Martensitelike spontaneous relaxor-normal ferroelectric transformation in Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 system

NASA Astrophysics Data System (ADS)

Deng, Guochu; Ding, Aili; Li, Guorong; Zheng, Xinsen; Cheng, Wenxiu; Qiu, Pingsun; Yin, Qingrui

2005-11-01

The spontaneous relaxor-normal ferroelectric transformation was found in the tetragonal composition of Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 (0.3PZN-0.7PLZT) complex ABO3 system. The corresponding dielectric permittivities and losses of different compositions located near the morphotrophic phase boundary were analyzed. By reviewing all of the results about this type of transformation in previous references, the electric, compositional, structural, and thermodynamic characteristics of the spontaneous relaxor-normal transformation were proposed. Additionally, the adaptive phase model for martensite transformation proposed by Khachaturyan et al. [Phys. Rev. B 43, 10832 (1991)] was introduced into this ferroelectric transformation to explain the unique transformation pathway and associated features such as the tweedlike domain patterns and the dielectric dispersion under the critical transition temperature. Due to the critical compositions near the MPB, the ferroelectric materials just fulfill the condition, in which the adaptive phases can form in the transformation procedure. The formation of the adaptive phases, which are composed of stress-accommodating twinned domains, makes the system bypass the energy barrier encountered in conventional martensite transformations. The twinned adaptive phase corresponds to the tweedlike domain pattern under a transmission electronic microscope. At lower temperature, these precursor phases transform into the conventional ferroelectric state with macrodomains by the movement of domain walls, which causes a weak dispersion in dielectric permittivity.

Polarization induced optical and electrical control of 2D materials by ferroelectrics

NASA Astrophysics Data System (ADS)

Zafar, Zainab; You, Yumeng

Integration of 2D semiconductors with ferroelectrics can provide a route towards control of polarization-switching by piezoelectric effect, allowing the realization of exciting features of next-generation optoelectronic devices. However, a fundamental understanding of spectroscopic investigation based on ferroelectric switching in ferroelectric/2D heterostructures remains elusive. Here, we demonstrate mechanical writing of nanoscale domains in ferroelectric thin film coupled with 2D materials, facilitated by piezoresponse force microscope (PFM). We propose the use of typical Raman/PL imaging to predict the effect of phase change of ferroelectric on 2D materials. Mechanical writing not only controls the local doping region, but also tunes the transport properties of the channel, as confirmed by its electrical characterization. By Raman/PL spectroscopy, we have identified the domain pattern of different polarizations in terms of amplitude modification of thin ferroelectric and possible shifts in wavenumber/energy of the emission peaks of 2D materials. Therefore, the sensitivity of spectroscopic imaging well corroborates the efficacy of mechanical writing for synthesizing ferroelectric gated 2D devices. Southeast University.

Stress-induced reversible and irreversible ferroelectric domain switching

NASA Astrophysics Data System (ADS)

Chen, Zibin; Huang, Qianwei; Wang, Feifei; Ringer, Simon P.; Luo, Haosu; Liao, Xiaozhou

2018-04-01

Ferroelectric materials have been extensively explored for applications in electronic devices because of their ferroelectric/ferroelastic domain switching behaviour under electric bias or mechanical stress. Recent findings on applying mechanical loading to manipulate reversible logical signals in non-volatile ferroelectric memory devices make ferroelectric materials more attractive to scientists and engineers. However, the dynamical microscopic structural behaviour of ferroelectric domains under stress is not well understood, which limits the applications of ferroelectric/ferroelastic switching in memory devices. Here, the kinetics of reversible and irreversible ferroelectric domain switching induced by mechanical stress in relaxor-based ferroelectrics was explored. In-situ transmission electron microscopy investigation revealed that 90° ferroelastic and 180° ferroelectric domain switching can be induced by low and high mechanical stresses. The nucleation and growth of nanoscale domains overwhelm the defect-induced pinning effect on the stable micro-domain walls. This study provides deep insights for exploring the mechanical kinetics for ferroelectric/ferroelastic domains and a clear pathway to overcome the domain pinning effect of defects in ferroelectrics.

Domains in Ferroelectric Nanostructures

NASA Astrophysics Data System (ADS)

Gregg, Marty

2010-03-01

Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device, the need to fully understand how size and morphology affect domain behaviour in small scale ferroelectrics is obvious. In this talk, observations from a programme of study examining domains in meso and nano-scale BaTiO3 shapes, that have been cut directly from bulk single crystal using focused ion beam milling, will be presented. In general, the equilibrium static domain configurations that occur appear to be the result of a simultaneous desire to minimize both the macroscopic strain and depolarizing fields developed on cooling through the Curie Temperature. While such governing factors might be obvious, the specific patterns that result as a function of morphology are often non-intuitive, and a series of images of domains in nanodots, rods and wires will be presented and rationalised. In addition, the nature in which morphological factors influence domain dynamics during switching will be discussed, with particular focus on axial switching in nanowires, and the manner in which local surface perturbations (such as notches and antinotches) affect domain wall propagation. In collaboration with Alina Schilling, Li-Wu Chang, Mark McMillen, Raymond McQuaid, and Leo McGilly, Queen's University Belfast; Gustau Catalan, Universitat Autonoma de Barcelona; and James Scott, University of Cambridge.

Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

DOE PAGES

Neumayer, Sabine M.; Ivanov, Ilia N.; Manzo, Michele; ...

2015-12-08

Controlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growthmore » control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the "up" to the "down" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original "up" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. Furthermore, these alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.« less

Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie; Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4

2015-12-14

Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore,more » piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.« less

Room temperature ferroelectricity in continuous croconic acid thin films

NASA Astrophysics Data System (ADS)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

2016-09-01

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

Room temperature ferroelectricity in continuous croconic acid thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structuresmore » of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.« less

Nanomechanics of Ferroelectric Thin Films and Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

2016-08-31

The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined.more » These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.« less

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.

2008-02-05

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresismore » measurements reveal an increase of coercive field due to the formation of single domain pattern.« less

Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS 2

DOE PAGES

Xiao, Zhiyong; Song, Jingfeng; Ferry, David K.; ...

2017-06-08

Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS 2 between a transistor and a junction state. In the presence of a domain wall, MoS 2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height Φ eff Β varies from 0.38 eV to 0.57 eV and is tunabe by a SiO 2 global back-gate, while the tuning range of Φ eff Β the barrier height depends sensitively on the conduction band tail trapping states. Our work points tomore » a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.« less

Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Zhiyong; Song, Jingfeng; Ferry, David K.

Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS 2 between a transistor and a junction state. In the presence of a domain wall, MoS 2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height Φ eff Β varies from 0.38 eV to 0.57 eV and is tunabe by a SiO 2 global back-gate, while the tuning range of Φ eff Β the barrier height depends sensitively on the conduction band tail trapping states. Our work points tomore » a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.« less

Ferroelectric translational antiphase boundaries in nonpolar materials

PubMed Central

Wei, Xian-Kui; Tagantsev, Alexander K.; Kvasov, Alexander; Roleder, Krystian; Jia, Chun-Lin; Setter, Nava

2014-01-01

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from those of the domains themselves, leading to new exploitable phenomena. Even more exciting is that a non-ferroelectric material may have domain boundaries that are ferroelectric. Many materials possess translational antiphase boundaries. Such boundaries could be interesting entities to carry information if they were ferroelectric. Here we show first that antiphase boundaries in antiferroelectrics may possess ferroelectricity. We then identify these boundaries in the classical antiferroelectric lead zirconate and evidence their polarity by electron microscopy using negative spherical-aberration imaging technique. Ab initio modelling confirms the polar bi-stable nature of the walls. Ferroelectric antiphase boundaries could make high-density non-volatile memory; in comparison with the magnetic domain wall memory, they do not require current for operation and are an order of magnitude thinner. PMID:24398704

Anti-parallel polarization switching in a triglycine sulfate organic ferroelectric insulator: The role of surface charges

NASA Astrophysics Data System (ADS)

Ma, He; Wu, Zhuangchun; Peng, Dongwen; Wang, Yaojin; Wang, Yiping; Yang, Ying; Yuan, Guoliang

2018-04-01

Four consecutive ferroelectric polarization switchings and an abnormal ring-like domain pattern can be introduced by a single tip bias of a piezoresponse force microscope in the (010) triglycine sulfate (TGS) crystal. The external electric field anti-parallel to the original polarization induces the first polarization switching; however, the surface charges of TGS can move toward the tip location and induce the second polarization switching once the tip bias is removed. The two switchings allow a ring-like pattern composed of the central domain with downward polarization and the outer domain with upward polarization. Once the two domains disappear gradually as a result of depolarization, the other two polarization switchings occur one by one at the TGS where the tip contacts. However, the backswitching phenomenon does not occur when the external electric field is parallel to the original polarization. These results can be explained according to the surface charges instead of the charges injected inside.

Field enhancement of electronic conductance at ferroelectric domain walls

DOE PAGES

Vasudevan, Rama K.; Cao, Ye; Laanait, Nouamane; ...

2017-11-06

Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. But, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO 3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of themore » atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. Our results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents.« less

Voltage control of magnetic single domains in Ni discs on ferroelectric BaTiO3

NASA Astrophysics Data System (ADS)

Ghidini, M.; Zhu, B.; Mansell, R.; Pellicelli, R.; Lesaine, A.; Moya, X.; Crossley, S.; Nair, B.; Maccherozzi, F.; Barnes, C. H. W.; Cowburn, R. P.; Dhesi, S. S.; Mathur, N. D.

2018-06-01

For 1 µm-diameter Ni discs on a BaTiO3 substrate, the local magnetization direction is determined by ferroelectric domain orientation as a consequence of growth strain, such that single-domain discs lie on single ferroelectric domains. On applying a voltage across the substrate, ferroelectric domain switching yields non-volatile magnetization rotations of 90°, while piezoelectric effects that are small and continuous yield non-volatile magnetization reversals that are non-deterministic. This demonstration of magnetization reversal without ferroelectric domain switching implies reduced fatigue, and therefore represents a step towards applications.

Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT

PubMed Central

Evans, D.M.; Schilling, A.; Kumar, Ashok; Sanchez, D.; Ortega, N.; Arredondo, M.; Katiyar, R.S.; Gregg, J.M.; Scott, J.F.

2013-01-01

Single-phase magnetoelectric multiferroics are ferroelectric materials that display some form of magnetism. In addition, magnetic and ferroelectric order parameters are not independent of one another. Thus, the application of either an electric or magnetic field simultaneously alters both the electrical dipole configuration and the magnetic state of the material. The technological possibilities that could arise from magnetoelectric multiferroics are considerable and a range of functional devices has already been envisioned. Realising these devices, however, requires coupling effects to be significant and to occur at room temperature. Although such characteristics can be created in piezoelectric-magnetostrictive composites, to date they have only been weakly evident in single-phase multiferroics. Here in a newly discovered room temperature multiferroic, we demonstrate significant room temperature coupling by monitoring changes in ferroelectric domain patterns induced by magnetic fields. An order of magnitude estimate of the effective coupling coefficient suggests a value of ~1 × 10−7 sm−1. PMID:23443562

Exchange coupling in permalloy/BiFeO3 heterostructures

NASA Astrophysics Data System (ADS)

Heron, John; Wang, Chen; Carlton, David; Nowakowski, Mark; Gajek, Martin; Awschalom, David; Bokor, Jeff; Ralph, Dan; Ramesh, R.

2010-03-01

BiFeO3 is a ferroelectric and antiferromagnetic multiferroic with the ferroelectric and antiferromagnetic order parameters coupled at room temperature. This coupling results in the reorientation of the ferroelectric and magnetic domains as applied voltages switch the electric polarization. Previous studies using ferromagnet/BiFeO3 heterostructures have shown that the anisotropy of the ferromagnetic layer can be tuned by the ferroelectric domain structure of the BiFeO3 film [1, 2]. The physical mechanism driving this exchange bias with BiFeO3 is still under investigation. We use patterned permalloy structures, with varying aspect ratios, on BiFeO3 thin films to investigate the physics of this interaction. The results of our studies using MFM, PEEM, and MOKE to understand this mechanism as a means to electric field control of magnetic structures will be presented. [4pt] [1] H. Bea et al., Physical Review Letters 100, 017204 (2008).[0pt] [2] L.W. Martin et al., Nanoletters 8, 2050 (2008).

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

PubMed

Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-01-06

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

Ferroelectric domain wall motion induced by polarized light

PubMed Central

Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

2015-01-01

Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

Reconstruction of the domain orientation distribution function of polycrystalline PZT ceramics using vector piezoresponse force microscopy.

PubMed

Kratzer, Markus; Lasnik, Michael; Röhrig, Sören; Teichert, Christian; Deluca, Marco

2018-01-11

Lead zirconate titanate (PZT) is one of the prominent materials used in polycrystalline piezoelectric devices. Since the ferroelectric domain orientation is the most important parameter affecting the electromechanical performance, analyzing the domain orientation distribution is of great importance for the development and understanding of improved piezoceramic devices. Here, vector piezoresponse force microscopy (vector-PFM) has been applied in order to reconstruct the ferroelectric domain orientation distribution function of polished sections of device-ready polycrystalline lead zirconate titanate (PZT) material. A measurement procedure and a computer program based on the software Mathematica have been developed to automatically evaluate the vector-PFM data for reconstructing the domain orientation function. The method is tested on differently in-plane and out-of-plane poled PZT samples, and the results reveal the expected domain patterns and allow determination of the polarization orientation distribution function at high accuracy.

A Mesoscopic Electromechanical Theory of Ferroelectric Films and Ceramics

NASA Astrophysics Data System (ADS)

Li, Jiangyu; Bhattacharya, Kaushik

2002-08-01

We present a multi-scale modelling framework to predict the effective electromechanical behavior of ferroelectric ceramics and thin films. This paper specifically focuses on the mesoscopic scale and models the effects of domains and domain switching taking into account intergranular constraints. Starting from the properties of the single crystal and the pre-poling granular texture, the theory predicts the domain patterns, the post-poling texture, the saturation polarization, saturation strain and the electromechanical moduli. We demonstrate remarkable agreement with experimental data. The theory also explains the superior electromechanical property of PZT at the morphotropic phase boundary. The paper concludes with the application of the theory to predict the optimal texture for enhanced electromechanical coupling factors and high-strain actuation in selected materials.

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

PubMed Central

Liu, Jianyi; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-01-01

This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc.) that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads. PMID:28788198

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin

2016-07-15

Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is takenmore » to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.« less

Ferroelectric domain structure of anisotropically strained NaNbO3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Schwarzkopf, J.; Braun, D.; Schmidbauer, M.; Duk, A.; Wördenweber, R.

2014-05-01

NaNbO3 thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO3 films with varying film thickness on NdGaO3 single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO3, TbScO3, and GdScO3 single crystalline substrates, NaNbO3 films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a1/a2 with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

Dynamical properties of epitaxial ferroelectric superlattices

NASA Astrophysics Data System (ADS)

Kim, Y.; Gerhardt, R. A.; Erbil, A.

1997-04-01

The dynamical properties of epitaxial ferroelectric heterostructures have been investigated by studying the dielectric behavior under external electric field. A phenomenon with a giant permittivity was observed. At low frequencies, real permittivities as high as 420 000 have been measured. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field, correlating with the dc bias-field dependence of ac permittivities. We model these observations as a result of the motion of pinned domain-wall lattices, having sliding-mode motion at high electric fields. The good agreement between the experimental and theoretical results suggests that the deposited interdigitated electrode pattern plays a crucial role in controlling domain-wall dynamics. The pinning of the domain wall comes from a nucleation barrier to the creation of new domain walls.

Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Xiaoqing

2015-06-30

The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structuresmore » of BiFeO 3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.« less

Domain structure of BiFeO3 thin films grown on patterned SrTiO3(001) substrates

NASA Astrophysics Data System (ADS)

Nakashima, Seiji; Seto, Shota; Kurokawa, Yuta; Fujisawa, Hironori; Shimizu, Masaru

2017-10-01

Recently, new functionalities of ferroelectric domain walls (DWs) have attracted much attention. To realize novel devices using the functionalities of the DWs, techniques to introduce the DWs at arbitrary positions in the ferroelectric thin films are necessary. In this study, we have demonstrated the introduction of the DWs at arbitrary positions in epitaxial BiFeO3 (BFO) thin films using the patterned surface of the SrTiO3 (STO) single-crystal substrate. On the slope pattern of the STO surface, the in-plane orientation of BFO has changed because the in-plane orientation of BFO can be controlled by the step propagation direction of the patterned surface. From the piezoresponse scanning force microscopy and X-ray diffraction reciprocal space mapping results, charged 109° DWs have been introduced into the BFO thin film at the bottom and top of the slope pattern of the STO surface. In addition, the conductivity modulation of the positively charged DW has been observed by current-sensitive atomic force microscopy imaging.

Learning through ferroelectric domain dynamics in solid-state synapses

NASA Astrophysics Data System (ADS)

Boyn, Sören; Grollier, Julie; Lecerf, Gwendal; Xu, Bin; Locatelli, Nicolas; Fusil, Stéphane; Girod, Stéphanie; Carrétéro, Cécile; Garcia, Karin; Xavier, Stéphane; Tomas, Jean; Bellaiche, Laurent; Bibes, Manuel; Barthélémy, Agnès; Saïghi, Sylvain; Garcia, Vincent

2017-04-01

In the brain, learning is achieved through the ability of synapses to reconfigure the strength by which they connect neurons (synaptic plasticity). In promising solid-state synapses called memristors, conductance can be finely tuned by voltage pulses and set to evolve according to a biological learning rule called spike-timing-dependent plasticity (STDP). Future neuromorphic architectures will comprise billions of such nanosynapses, which require a clear understanding of the physical mechanisms responsible for plasticity. Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be harnessed from inhomogeneous polarization switching. Through combined scanning probe imaging, electrical transport and atomic-scale molecular dynamics, we demonstrate that conductance variations can be modelled by the nucleation-dominated reversal of domains. Based on this physical model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to recognize patterns in a predictable way, opening the path towards unsupervised learning in spiking neural networks.

Analysis and interpretation of diffraction data from complex, anisotropic materials

NASA Astrophysics Data System (ADS)

Tutuncu, Goknur

Most materials are elastically anisotropic and exhibit additional anisotropy beyond elastic deformation. For instance, in ferroelectric materials the main inelastic deformation mode is via domains, which are highly anisotropic crystallographic features. To quantify this anisotropy of ferroelectrics, advanced X-ray and neutron diffraction methods were employed. Extensive sets of data were collected from tetragonal BaTiO3, PZT and other ferroelectric ceramics. Data analysis was challenging due to the complex constitutive behavior of these materials. To quantify the elastic strain and texture evolution in ferroelectrics under loading, a number of data analysis techniques such as the single peak and Rietveld methods were used and their advantages and disadvantages compared. It was observed that the single peak analysis fails at low peak intensities especially after domain switching while the Rietveld method does not account for lattice strain anisotropy although it overcomes the low intensity problem via whole pattern analysis. To better account for strain anisotropy the constant stress (Reuss) approximation was employed within the Rietveld method and new formulations to estimate lattice strain were proposed. Along the way, new approaches for handling highly anisotropic lattice strain data were also developed and applied. All of the ceramics studied exhibited significant changes in their crystallographic texture after loading indicating non-180° domain switching. For a full interpretation of domain switching the spherical harmonics method was employed in Rietveld. A procedure for simultaneous refinement of multiple data sets was established for a complete texture analysis. To further interpret diffraction data, a solid mechanics model based on the self-consistent approach was used in calculating lattice strain and texture evolution during the loading of a polycrystalline ferroelectric. The model estimates both the macroscopic average response of a specimen and its hkl-dependent lattice strains for different reflections. It also tracks the number of grains (or domains) contributing to each reflection and allows for domain switching. The agreement between the model and experimental data was found to be satisfactory.

Heterogeneous Polarized States in Ferroelectric Inclusions in a Ferroelectric-Dielectric Nanocomposite

NASA Astrophysics Data System (ADS)

Nechaev, V. N.; Viskovatykh, A. V.

2018-06-01

The behavior of the previously observed inhomogeneous polarized states in ferroelectric inclusions of the nanocomposite is analyzed in detail. The domain structure of ferroelectric particles depends on the temperature and nature of interaction with the dielectric matrix. The possibility of controlling the domain structure in ferroelectric particles using an external electric field is shown.

Matrix-addressed analog ferroelectric memory

NASA Astrophysics Data System (ADS)

Lemons, R. A.; Grogan, J. K.; Thompson, J. S.

1980-08-01

A matrix addressed analog memory which uses multiple ferroelectric domain walls to address columns of words, is demonstrated. It is shown that the analog information is stored as a pattern in the metallization on the surface of the crystal, making a read-only memory. The pattern is done photolithographically in a way compatible with the simultaneous fabrication of many devices. Attention is given to the performance results, noting that the advantage of the device is that analog information can be stored with a high density in a single mask step. Finally, it is shown that potential applications are in systems which require repetitive output from a limited vocabulary of spoken words.

Unusual polarization patterns in flat epitaxial ferroelectric nanoparticles

NASA Astrophysics Data System (ADS)

Naumov, Ivan; Bratkovsky, Alexandr

2009-03-01

We investigate the effects of a lattice misfit strain on a ground state and polarization patterns in flat perovskite nanoparticles (nanoislands of BaTiO3 and PbZr0.5Ti0.5O3) with the use of an ab-initio derived effective Hamiltonian. We show that the strain strongly controls the balance between the depolarizing field and the polarization anizotropy in determining the equilibrium polarization patterns. Compressive strain favors 180 ^0 stripe/tweed domains while a tensile strain leads to in-plane vortex formation, with the unusual intermediate phase (s) where both ordering motifs coexist [1]. The results may allow to explain contradictions in recent experimental data for ferroelectric nanoparticles. [1] Ivan Naumov and Alexander M. Bratkovsky, Phys. Rev. Lett. 101, 107601 (2008).

Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beekman, C.; Siemons, W.; Chi, M.

2016-05-23

Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO 3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO 3 (R' and T') in thin films grown on LaAlO 3 substrates with slightly different La 0.3Sr 0.7MnO 3 buffer layers. Our study shows that the polarizationmore » state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. We observed reduction of the monoclinic domain size and found that it was largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T c). Finally, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.« less

Ferroelectric negative capacitance domain dynamics

NASA Astrophysics Data System (ADS)

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2018-05-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

Lattice-Rotation Vortex at the Charged Monoclinic Domain Boundary in a Relaxor Ferroelectric Crystal

NASA Astrophysics Data System (ADS)

Shao, Yu-Tsun; Zuo, Jian-Min

2017-04-01

We present evidence of lattice-rotation vortices having an average radius of ˜7 nm at the ferroelectric domain boundary of (1 -x )Pb (Zn1 /3Nb2 /3)O3-xPbTiO3 (x =0.08 ). Maps of crystal orientations and domain symmetry breaking are obtained using scanning convergent beam electron diffraction, which show fractional rotation vortices near the 50° monoclinic domain walls. The merging of 2D and 1D topological defects is consistent with inhomogeneous boundary charge and expected to have a large impact on the domain-switching mechanisms in relaxor ferroelectric crystals and ferroelectric devices.

Ferroionic states: coupling between surface electrochemical and bulk ferroelectric functionalities on the nanoscale.

NASA Astrophysics Data System (ADS)

Kalinin, Sergei

Ferroelectricity on the nanoscale has remained a subject of much fascination in condensed matter physics for the last several decades. It is well-recognized that stability of the ferroelectric state necessitates effective polarization screening, and hence screening mechanism and screening charge dynamics become strongly coupled to ferroelectric phase stability and domain behavior. Previously, the role of the screening charge in macroscopic ferroelectrics was observed in phenomena such as potential retention above Curie temperature, back switching of ferroelectric domains, and chaos and intermittency during domain switching. In the last several years, multiple reports claiming ferroelectricity in ultrathin ferroelectrics based on formation of remanent polarization states, local hysteresis loops, and pressure induced switching were made. However, similar phenomena were reported for traditionally non-ferroelectric materials, creating significant level of uncertainty in the field. We pose that in the nanoscale systems, the ferroelectric state is fundamentally inseparable from electrochemical state of the surface, leading to emergence of coupled electrochemical-ferroelectric states. I will present the results of experimental and theoretical work exploring the basic mechanisms of emergence of these coupled states including the basic theory and phase-field formulation for domain evolution. I further discuss the thermodynamics and thickness evolution of this state, and demonstrate the experimental pathway to establish its presence based on spectroscopic version of piezoresponse force microscopy. Finally, the role of chemical screening on domain dynamics is explored using phase-field modelling. This analysis reconciles multiple prior studies, and set forward the predictive pathways for new generations of ferroelectric devices and applications. This research was sponsored by the Division of Materials Sciences and Engineering, BES, DOE, and was conducted at the Center for Nanophase Materials Sciences, sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division.

Graphene Based Surface Plasmon Polariton Modulator Controlled by Ferroelectric Domains in Lithium Niobate

PubMed Central

Wang, Hao; Zhao, Hua; Hu, Guangwei; Li, Siren; Su, Hang; Zhang, Jingwen

2015-01-01

We proposed a ferroelectric domain controlled graphene based surface plasmon polariton modulator. Ferroelectricity-induced electronic and optical property tuning of graphene by domain in lithium niobate was theoretically investigated considering both interband and intraband contributions of surface conductivity. With the corrected Sellmeier equation of lithium niobate, the propagation of transverse magnetic mode surface plasmon polaritons in an air/graphene/lithium niobate structure was studied when monolayer graphene was tuned by down polarization direction ferroelectric domain with different polarization levels. The length of the ferroelectric domain was optimized to be 90 nm for a wavelength of 5.0 μm with signal extinction per unit 14.7 dB/μm, modulation depth 474.1 dB/μm and figure of merit 32.5. This work may promote the study of highly efficient modulators and other ultra-compact nonvolatile electronic and photonic devices in which two-dimensional materials and ferroelectric materials are combined. PMID:26657622

Reversible optical control of macroscopic polarization in ferroelectrics

NASA Astrophysics Data System (ADS)

Rubio-Marcos, Fernando; Ochoa, Diego A.; Del Campo, Adolfo; García, Miguel A.; Castro, Germán R.; Fernández, José F.; García, José E.

2018-01-01

The optical control of ferroic properties is a subject of fascination for the scientific community, because it involves the establishment of new paradigms for technology1-9. Domains and domain walls are known to have a great impact on the properties of ferroic materials1-24. Progress is currently being made in understanding the behaviour of the ferroelectric domain wall, especially regarding its dynamic control10-12,17,19. New research is being conducted to find effective methodologies capable of modulating ferroelectric domain motion for future electronics. However, the practical use of ferroelectric domain wall motion should be both stable and reversible (rewritable) and, in particular, be able to produce a macroscopic response that can be monitored easily12,17. Here, we show that it is possible to achieve a reversible optical change of ferroelectric domains configuration. This effect leads to the tuning of macroscopic polarization and its related properties by means of polarized light, a non-contact external control. Although this is only the first step, it nevertheless constitutes the most crucial one in the long and complex process of developing the next generation of photo-stimulated ferroelectric devices.

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Learning through ferroelectric domain dynamics in solid-state synapses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyn, Soren; Grollier, Julie; Lecerf, Gwendal

In the brain, learning is achieved through the ability of synapses to reconfigure the strength by which they connect neurons (synaptic plasticity). In promising solid-state synapses called memristors, conductance can be finely tuned by voltage pulses and set to evolve according to a biological learning rule called spike-timing-dependent plasticity (STDP). Future neuromorphic architectures will comprise billions of such nanosynapses, which require a clear understanding of the physical mechanisms responsible for plasticity. Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be harnessed from inhomogeneous polarization switching. Through combined scanning probe imaging, electrical transport andmore » atomic-scale molecular dynamics, we demonstrate that conductance variations can be modelled by the nucleation-dominated reversal of domains. Finally, based on this physical model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to recognize patterns in a predictable way, opening the path towards unsupervised learning in spiking neural networks.« less

Learning through ferroelectric domain dynamics in solid-state synapses

DOE PAGES

Boyn, Soren; Grollier, Julie; Lecerf, Gwendal; ...

2017-04-03

In the brain, learning is achieved through the ability of synapses to reconfigure the strength by which they connect neurons (synaptic plasticity). In promising solid-state synapses called memristors, conductance can be finely tuned by voltage pulses and set to evolve according to a biological learning rule called spike-timing-dependent plasticity (STDP). Future neuromorphic architectures will comprise billions of such nanosynapses, which require a clear understanding of the physical mechanisms responsible for plasticity. Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be harnessed from inhomogeneous polarization switching. Through combined scanning probe imaging, electrical transport andmore » atomic-scale molecular dynamics, we demonstrate that conductance variations can be modelled by the nucleation-dominated reversal of domains. Finally, based on this physical model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to recognize patterns in a predictable way, opening the path towards unsupervised learning in spiking neural networks.« less

Graphene Exfoliation at a Ferroelectric Domain Wall Induced by the Piezoelectric Effect: Impact on the Conductance of the Graphene Channel

NASA Astrophysics Data System (ADS)

Morozovska, Anna N.; Kurchak, Anatolii I.; Strikha, Maksym V.

2017-11-01

p -n junctions in graphene on ferroelectric substrates have been actively studied, but the impact of the piezoelectric effect in ferroelectric substrate with ferroelectric domain walls (FDWs) on graphene characteristics was not considered. Because of the piezoeffect, ferroelectric domain stripes with opposite spontaneous polarizations elongate or contract depending on the polarity of voltage applied to the substrate. We show that the alternating piezoelectric displacement of the ferroelectric domain surfaces can lead to the alternate stretching and separation of graphene areas at the steps between elongated and contracted domains. Graphene separation at FDWs induced by the piezoeffect can cause unusual effects. In particular, the conductance of the graphene channel in a field-effect transistor increases significantly because electrons in the stretched section scatter on acoustic phonons. At the same time, the graphene conductance is determined by ferroelectric spontaneous polarization and varies greatly in the presence of FDWs. The revealed piezomechanism of graphene conductance control is promising for next generations of graphene-based field-effect transistors, modulators, electrical transducers, and piezoresistive elements. Also, our results propose the method of suspended graphene fabrication based on the piezoeffect in a ferroelectric substrate that does not require any additional technological procedures.

Electrical and structural investigations, and ferroelectric domains in nanoscale structures

NASA Astrophysics Data System (ADS)

Alexe, Marin

2005-03-01

Generally speaking material properties are expected to change as the characteristic dimension of a system approaches at the nanometer scale. In the case of ferroelectric materials fundamental problems such as the super-paraelectric limit, influence of the free surface and/or of the interface and bulk defects on ferroelectric switching, etc. arise when scaling the systems into the sub-100 nm range. In order to study these size effects, fabrication methods of high quality nanoscale ferroelectric crystals as well as AFM-based investigations methods have been developed in the last few years. The present talk will briefly review self-patterning and self- assembly fabrication methods, including chemical routes, morphological instability of ultrathin films, and self-assembly lift-off, employed up to the date to fabricate ferroelectric nanoscale structures with lateral size in the range of few tens of nanometers. Moreover, in depth structural and electrical investigations of interfaces performed to differentiate between intrinsic and extrinsic size effects will be also presented.

Investigation of Ferroelectric Domain Walls by Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Stone, Gregory A.

Ferroelectric materials are characterized by an intrinsic spontaneous electric dipole moment that can be manipulated by the application of an electric field. Regions inside the crystal, known as domains, can have the spontaneous dipole moments oriented in a different direction than the surrounding crystal. Due to favorable piezoelectric, pyroelectric, electro-optic, and nonlinear optical properties, ferroelectric materials are attractive for commercial applications. Many devices, such as nonlinear frequency converters, require precisely engineered domain patterns. The properties of domains and their boundaries, known as domain walls, are vital to the performance and limitations of these devices. As a result, ferroelectric domains and the domain walls have been the focus of many scientific studies. Despite all this work, questions remain regarding their properties. This work is aimed at developing a better understanding of the properties of the domain wall using confocal Raman spectroscopy. Raman spectra taken from domain walls in Lithium Niobate and Lithium Tantalate reveal two distinct changes in the Raman spectra: (1) Shifts in frequency of the bulk Raman modes, which persists over a range of 0.2-0.5 mu m from the domain wall. The absence of this effect in defect free stoichiometric Lithium Tantalate indicates that the shifts are related to defects inside the crystal. (2) The presence of Raman modes corresponding to phonons propagating orthogonal to the laser beam axis, which are not collected in the bulk crystal. The phonons also preferential propagate normal to the domain wall. These modes are detected up to 0.35 mum from the domain wall. The observation and separation of these effects was made possible by the optimized spatial resolution (0.23 mum) of a home-built scanning confocal microscope and the fact that degeneracy of the transverse and longitudinal phonon polarization is lifted by polar phonons in Lithium Niobate and Lithium Tantalate. Raman investigations on other interfaces such as front, side and bottom surfaces revealed a similar appearance of modes due to distortion of wave fronts and reflection. These surfaces are studied to provide insight into mechanism that give rise to Raman modes typically absent for the particular orientation of the crystal.

Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO 3 films

DOE PAGES

Tang, Y. L.; Zhu, Y. L; Ma, Xiuliang; ...

2015-05-01

Nanoscale ferroelectrics are expected to exhibit various exotic domain configurations, such as the full flux-closure pattern that is well known in ferromagnetic materials. Here we observe not only the atomic morphology of the flux-closure quadrant but also a periodic array of flux closures in ferroelectric PbTiO 3 films, mediated by tensile strain on a GdScO 3 substrate. Using aberration-corrected scanning transmission electron microscopy, we directly visualize an alternating array of clockwise and counterclockwise flux closures, whose periodicity depends on the PbTiO 3 film thickness. In the vicinity of the core, the strain is sufficient to rupture the lattice, with strainmore » gradients up to 10 9 per meter. We found engineering strain at the nanoscale may facilitate the development of nanoscale ferroelectric devices.« less

Structure and piezo-ferroelectricity relationship study of (K0.5Na0.5)0.985La0.005NbO3 epitaxial films deposited on SrTiO3 by sputtering.

PubMed

H Mŏk, H Linh; Martínez-Aguilar, E; Gervacio-Arciniega, J J; Vendrell, X; Siqueiros-Beltrones, J M; Raymond-Herrera, O

2017-12-18

This work demonstrates that the rf-sputtering technique, combined with appropriate heat treatments, is potentially effective to develop new materials and devices based on oxide-interface and strain engineering. We report a study of the structural-physical properties relationship of high crystalline quality, highly oriented and epitaxial thin films of the lead-free (K 0.5 Na 0.5 ) 0.985 La 0.005 NbO 3 (KNNLa) compound which were successfully deposited on Nb-doped SrTiO 3 substrates, with orientations [100] (NSTO100) and [110] (NSTO110). The crystalline growth and the local ferroelectric and piezoelectric properties were evaluated by piezoresponse force microscopy combined with transmission electron microscopy and texture analysis by X-ray diffraction. Conditioned by the STO surface parameters, in the KNNLa films on NSTO100 coexist a commensurate [001]-tetragonal phase and two incommensurate [010]-monoclinic phases; while on NSTO110 the KNNLa films grew only in an incommensurate [101]-monoclinic phase. Both samples show excellent out-of-plane polarization switching patterns consistent with 180° domains walls; while for KNNLa/NSTO100 ferroelectric domains grow with the polarization pointing down, for KNNLa/NSTO110 they prefer to grow with the polarization pointing up. Comparing with previous reports on epitaxial KNN films, we find our samples to be of very high quality regarding their crystalline growth with highly ordered ferroelectric domains arrangements and, consequently, great potential for domain engineering.

Domain walls and ferroelectric reversal in corundum derivatives

NASA Astrophysics Data System (ADS)

Ye, Meng; Vanderbilt, David

2017-01-01

Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.

Domain walls and ferroelectric reversal in corundum derivatives

NASA Astrophysics Data System (ADS)

Ye, Meng; Vanderbilt, David

Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180° domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy, and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond valence sums. Our results thus provide both theoretical and empirical guidance to further search for ferroelectric candidates in materials of the corundum derivative family. The work is supported by ONR Grant N00014-12-1-1035.

Scanning Probe Microscopy and Electrical Transport Studies of Ferroelectric Thin Films and 2D van der Waals Materials

NASA Astrophysics Data System (ADS)

Xiao, Zhiyong

In this dissertation, I present the scanning microscopy and electrical transport studies of ferroelectric thin films and ferroic/2D van der Waals heterostructures. Based on the conducting probe atomic force microscopy and piezo-response force microscopy (PFM) studies of the static and dynamic behavior of ferroelectric domain walls (DW), we found that the ferroelectric polymer poly(vinylidene-fluoride-trifluorethylene) P(VDF-TrFE) is composed of two-dimensional (2D) ferroelectric monolayers (MLs) that are weakly coupled to each other. We also observed polarization asymmetry in epitaxial thin films of ferroelectric Pb(Zr,Ti)O3, which is attributed to the screening properties of the underlying conducting oxide. PFM studies also reveal ferroelectric relaxor-type behavior in ultrathin Sr(Zr,Ti)O3 films epitaxially deposited on Ge. We exploited scanning-probe-controlled domain patterning in a P(VDF-TrFE) top layer to induce nonvolatile modulation of the conduction characteristic of ML molybdenum disulfide (MoS2) between a transistor and a junction state. In the presence of a DW, MoS2 exhibits rectified Ids-Vds (IV) characteristics that are well described by the thermionic emission model. This approach can be applied to a wide range of van der Waals materials to design various functional homojunctions and nanostructures. We also studied the interfacial charge transfer effect between graphene and magnetoelectric Cr2O3 via electrostatic force microscopy and Kelvin probe force microscopy, which reveal p-type doping with up to 150 meV shift of the Fermi level. The graphene/Cr2O3 heterostructure is promising for developing magnetoelectric graphene transistors for spintronic applications.

Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

DOE PAGES

Morozovska, Anna N.; Eliseev, Eugene A.; Kurchak, Anatolii I.; ...

2017-12-08

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation energy value on the polarization states and polarization reversal mechanisms, domain structure and corresponding phase diagrams of ferroelectric thin films. Using 3D finite elements modeling we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and poly- domain ferroelectric, ferroionic, antiferroionic and non-ferroelectric states as amore » function of surface ions formation energy, film thickness, applied voltage and temperature. We further map the analytical theory for 1D system onto effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. In conclusion, this approach allows performing the overview of the ferroionic system phase diagrams and exploring the specifics of switching and domain evolution phenomena.« less

Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozovska, Anna N.; Eliseev, Eugene A.; Kurchak, Anatolii I.

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation energy value on the polarization states and polarization reversal mechanisms, domain structure and corresponding phase diagrams of ferroelectric thin films. Using 3D finite elements modeling we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and poly- domain ferroelectric, ferroionic, antiferroionic and non-ferroelectric states as amore » function of surface ions formation energy, film thickness, applied voltage and temperature. We further map the analytical theory for 1D system onto effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. In conclusion, this approach allows performing the overview of the ferroionic system phase diagrams and exploring the specifics of switching and domain evolution phenomena.« less

Domain topology and domain switching kinetics in a hybrid improper ferroelectric

PubMed Central

Huang, F. -T.; Xue, F.; Gao, B.; Wang, L. H.; Luo, X.; Cai, W.; Lu, X. -Z.; Rondinelli, J. M.; Chen, L. Q.; Cheong, S. -W.

2016-01-01

Charged polar interfaces such as charged ferroelectric walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric walls, which are energetically unfavourable in general, were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr)3Ti2O7 crystals. From the exploration of antiphase boundaries in bilayer-perovskites, here we discover that each of four polarization-direction states is degenerate with two antiphase domains, and these eight structural variants form a Z4 × Z2 domain structure with Z3 vortices and five distinct types of domain walls, whose topology is directly relevant to the presence of abundant charged walls. We also discover a zipper-like nature of antiphase boundaries, which are the reversible creation/annihilation centres of pairs of two types of ferroelectric walls (and also Z3-vortex pairs) in 90° and 180° polarization switching. Our results demonstrate the unexpectedly rich nature of hybrid improper ferroelectricity. PMID:27215944

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

NASA Astrophysics Data System (ADS)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

2018-03-01

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

Comparative analysis of ferroelectric domain statistics via nonlinear diffraction in random nonlinear materials.

PubMed

Wang, B; Switowski, K; Cojocaru, C; Roppo, V; Sheng, Y; Scalora, M; Kisielewski, J; Pawlak, D; Vilaseca, R; Akhouayri, H; Krolikowski, W; Trull, J

2018-01-22

We present an indirect, non-destructive optical method for domain statistic characterization in disordered nonlinear crystals having homogeneous refractive index and spatially random distribution of ferroelectric domains. This method relies on the analysis of the wave-dependent spatial distribution of the second harmonic, in the plane perpendicular to the optical axis in combination with numerical simulations. We apply this technique to the characterization of two different media, Calcium Barium Niobate and Strontium Barium Niobate, with drastically different statistical distributions of ferroelectric domains.

Coupled multiferroic domain switching in the canted conical spin spiral system Mn2GeO4

NASA Astrophysics Data System (ADS)

Honda, T.; White, J. S.; Harris, A. B.; Chapon, L. C.; Fennell, A.; Roessli, B.; Zaharko, O.; Murakami, Y.; Kenzelmann, M.; Kimura, T.

2017-06-01

Despite remarkable progress in developing multifunctional materials, spin-driven ferroelectrics featuring both spontaneous magnetization and electric polarization are still rare. Among such ferromagnetic ferroelectrics are conical spin spiral magnets with a simultaneous reversal of magnetization and electric polarization that is still little understood. Such materials can feature various multiferroic domains that complicates their study. Here we study the multiferroic domains in ferromagnetic ferroelectric Mn2GeO4 using neutron diffraction, and show that it features a double-Q conical magnetic structure that, apart from trivial 180o commensurate magnetic domains, can be described by ferromagnetic and ferroelectric domains only. We show unconventional magnetoelectric couplings such as the magnetic-field-driven reversal of ferroelectric polarization with no change of spin-helicity, and present a phenomenological theory that successfully explains the magnetoelectric coupling. Our measurements establish Mn2GeO4 as a conceptually simple multiferroic in which the magnetic-field-driven flop of conical spin spirals leads to the simultaneous reversal of magnetization and electric polarization.

Current and surface charge modified hysteresis loops in ferroelectric thin films

DOE PAGES

Balke Wisinger, Nina; Jesse, Stephen; Maksymovych, Petro; ...

2015-08-19

Polarization domains in ferroelectric materials and the ability to orient them with an external electric field lead to the development of a variety of applications from information storage to actuation. The development of piezoresponse force microscopy (PFM) has enabled researchers to investigate ferroelectric domains and ferroelectric domain switching on the nanoscale, which offers a pathway to study structure-function relationships in this important material class. Due to its commercial availability and ease of use, PFM has become a widely used research tool. However, measurement artifacts, i.e., alternative signal origins besides the piezoelectric effect are barely discussed or considered. This becomes especiallymore » important for materials with a small piezoelectric coefficient or materials with unknown ferroelectric properties, including non-ferroelectric materials. Here, the role of surface charges and current flow during PFM measurements on classical ferroelectrics are discussed and it will be shown how they alter the PFM hysteresis loop shape. This will help to better address alternative signal origins in PFM-type experiments and offer a pathway to study additional phenomena besides ferroelectricity.« less

Interferometric imaging of nonlocal electromechanical power transduction in ferroelectric domains.

PubMed

Zheng, Lu; Dong, Hui; Wu, Xiaoyu; Huang, Yen-Lin; Wang, Wenbo; Wu, Weida; Wang, Zheng; Lai, Keji

2018-05-22

The electrical generation and detection of elastic waves are the foundation for acoustoelectronic and acoustooptic systems. For surface acoustic wave devices, microelectromechanical/nanoelectromechanical systems, and phononic crystals, tailoring the spatial variation of material properties such as piezoelectric and elastic tensors may bring significant improvements to the system performance. Due to the much slower speed of sound than speed of light in solids, it is desirable to study various electroacoustic behaviors at the mesoscopic length scale. In this work, we demonstrate the interferometric imaging of electromechanical power transduction in ferroelectric lithium niobate domain structures by microwave impedance microscopy. In sharp contrast to the traditional standing-wave patterns caused by the superposition of counterpropagating waves, the constructive and destructive fringes in microwave dissipation images exhibit an intriguing one-wavelength periodicity. We show that such unusual interference patterns, which are fundamentally different from the acoustic displacement fields, stem from the nonlocal interaction between electric fields and elastic waves. The results are corroborated by numerical simulations taking into account the sign reversal of piezoelectric tensor in oppositely polarized domains. Our work paves ways to probe nanoscale electroacoustic phenomena in complex structures by near-field electromagnetic imaging.

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

PubMed

Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

2016-10-12

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomenamore » in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.« less

Investigation about relationships between the symmetries of ferroelectric crystal Ca0.28Ba0.72Nb2O6 and second-harmonic patterns

NASA Astrophysics Data System (ADS)

Xu, Tianxiang; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

2015-08-01

The broadband quasi-phase matching (QPM) process in a uniaxial ferroelectric crystal Ca0.28Ba0.72Nb2O6 (CBN-28) was demonstrated with the second-harmonic wavelength range from 450 nm to 650 nm, and the relationship between the symmetries of CBN-28 and the second-harmonic patterns was experimentally and theoretically investigated based on the random anti-parallel domains in the crystal and QPM conditions. The dependences of frequency-doubled patterns on the wavelength and anisotropy of the nonlinear crystal were also studied, and the frequency-doubled photons were found to be trapped on circles. By analyzing the light-matter interacting Hamiltonians, the trapping force for second-harmonic photons was found to be centripetal and tunable by the fundamental lasers, and the variation tendencies of the rotational velocity of second-harmonic generation photons could also be predicated. The results indicate that the CBN-28 ferroelectric crystal is a promising nonlinear optical material for the generation of broadband frequency-doubled waves, and the analysis on centripetal force based on the interaction Hamiltonians may provide a novel recognition for the investigation of QPM process to be further studied.

Rewritable ferroelectric vortex pairs in BiFeO3

NASA Astrophysics Data System (ADS)

Li, Yang; Jin, Yaming; Lu, Xiaomei; Yang, Jan-Chi; Chu, Ying-Hao; Huang, Fengzhen; Zhu, Jinsong; Cheong, Sang-Wook

2017-08-01

Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krug, Ingo P.; Institut für Optik and Atomare Physik; Helmholtzzentrum für Materialien und Energie

2016-09-07

We employed a multitechnique approach using piezo-force response microscopy and photoemission microscopy to investigate a self-organizing polarization domain pattern in PbTiO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (PTO/LSMO) nanostructures. The polarization is correlated with the nanostructure morphology as well as with the thickness and Mn valence of the LSMO template layer. On the LSMO dots, the PTO is upwards polarized, whereas outside the nanodots, the polarization appears both strain and interface roughness dependent. The results suggest that the electronic structure and strain of the PTO/LSMO interface contribute to determining the internal bias of the ferroelectric layer.

Multiscale Simulations of Dynamics of Ferroelectric Domains

NASA Astrophysics Data System (ADS)

Liu, Shi

Ferroelectrics with switchable polarization have many important technological applications, which heavily rely on the interactions between the polarization and external perturbations. Understanding the dynamical response of ferroelectric materials is crucial for the discovery and development of new design principles and engineering strategies for optimized and breakthrough applications of ferroelectrics. We developed a multiscale computational approach that combines methods at different length and time scales to elucidate the connection between local structures, domain dynamics, and macroscopic finite-temperature properties of ferroelectrics. We started from first-principles calculations of ferroelectrics to build a model interatomic potential, enabling large-scale molecular dynamics (MD) simulations. The atomistic insights of nucleation and growth at the domain wall obtained from MD were then incorporated into a continuum model within the framework of Landau-Ginzburg-Devonshire theory. This progressive theoretical framework allows for the first time an efficient and accurate estimation of macroscopic properties such as the coercive field for a broad range of ferroelectrics from first-principles. This multiscale approach has also been applied to explore the effect of dipolar defects on ferroelectric switching and to understand the origin of giant electro-strain coupling. ONR, NSF, Carnegie Institution for Science.

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

NASA Astrophysics Data System (ADS)

Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-12-01

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

Electric field driven evolution of topological domain structure in hexagonal manganites

NASA Astrophysics Data System (ADS)

Yang, K. L.; Zhang, Y.; Zheng, S. H.; Lin, L.; Yan, Z. B.; Liu, J.-M.; Cheong, S.-W.

2017-10-01

Controlling and manipulating the topological state represents an important topic in condensed matters for both fundamental researches and applications. In this work, we focus on the evolution of a real-space topological domain structure in hexagonal manganites driven by electric field, using the analytical and numerical calculations based on the Ginzburg-Landau theory. It is revealed that the electric field drives a transition of the topological domain structure from the type-I pattern to the type-II one. In particular, it is identified that a high electric field can enforce the two antiphase-plus-ferroelectric (AP +FE ) domain walls with Δ Φ =π /3 to approach each other and to merge into one domain wall with Δ Φ = 2 π /3 eventually if the electric field is sufficiently high, where Δ Φ is the difference in the trimerization phase between two neighboring domains. Our simulations also reveal that the vortex cores of the topological structure can be disabled at a sufficiently high critical electric field by suppressing the structural trimerization therein, beyond which the vortex core region is replaced by a single ferroelectric domain without structural trimerization (Q = 0 ). Our results provide a stimulating reference for understanding the manipulation of real-space topological domain structure in hexagonal manganites.

In situ X-ray diffraction and the evolution of polarization during the growth of ferroelectric superlattices

DOE PAGES

Bein, Benjamin; Hsing, Hsiang-Chun; Callori, Sara J.; ...

2015-12-04

In the epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrostatic boundary conditions may play an important role. In this work, ferroelectric domains, surface termination, average lattice parameter and bilayer thickness are simultaneously monitored using in situ synchrotron X-ray diffraction during the growth of BaTiO 3/SrTiO 3 superlattices on SrTiO 3 substrates by off-axis radio frequency magnetron sputtering. The technique used allows for scan times substantially faster than the growth of a single layer of material. Effectsmore » of electric boundary conditions are investigated by growing the same superlattice alternatively on SrTiO 3 substrates and 20 nm SrRuO 3 thin films on SrTiO 3 substrates. Our experiments provide important insights into the formation and evolution of ferroelectric domains when the sample is ferroelectric during the growth process.« less

Mapping 180° polar domains using electron backscatter diffraction and dynamical scattering simulations

DOE PAGES

Burch, Matthew J.; Fancher, Chris M.; Patala, Srikanth; ...

2016-11-18

A novel technique, which directly and nondestructively maps polar domains using electron backscatter diffraction (EBSD) is described and demonstrated. Through dynamical diffraction simulations and quantitative comparison to experimental EBSD patterns, the absolute orientation of a non-centrosymmetric crystal can be determined. With this information, the polar domains of a material can be mapped. The technique is demonstrated by mapping the non-ferroelastic, or 180°, ferroelectric domains in periodically poled LiNbO 3 single crystals. Furthermore, the authors demonstrate the possibility of mapping polarity using this technique in other polar materials system.

Electro-Active Transducer Using Radial Electric Field To Produce/Motion Sense Out-Of-Plane Transducer

NASA Technical Reports Server (NTRS)

Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

2006-01-01

An electro-active transducer includes a ferroelectric material sandwiched by first and second electrode patterns. When the device is used as an actuator, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when voltage is applied to the electrode patterns. When the device is used as a sensor. the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when the ferroelectric material experiences deflection in a direction substantially perpendicular thereto. In each case, the electrode patterns are designed to cause the electric field to: i) originate at a region of the ferroelectric material between the first and second electrode patterns. and ii) extend radially outward from the region of the ferroelectric material (at which the electric field originates) and substantially parallel to the ferroelectric material s plane.

The anhysteretic polarisation of ferroelectrics

NASA Astrophysics Data System (ADS)

Kaeswurm, B.; Segouin, V.; Daniel, L.; Webber, K. G.

2018-02-01

Measurement and calculation of anhysteretic curves is a well-established method in the field of magnetic materials and is applied to ferroelectric materials here. The anhysteretic curve is linked to a stable equilibrium state in the domain structure, and ignores dissipative effects related to mechanisms such as domain wall pinning. In this study, an experimental method for characterising the anhysteretic behaviour of ferroelectrics is presented, which is subsequently used to determine the anhysteretic polarisation response of polycrystalline barium titanate and a doped lead zirconate titanate composition at room temperature. Various external parameters, such as electric field, stress, and temperature, can significantly affect ferroelectric behaviour. Ferroelectric hysteresis curves can assess the importance of such effects but cannot distinguish their contribution on the different intrinsic and extrinsic mechanisms involved in ferroelectric behaviour. In this work, the influence of compressive stress on the anhysteretic polarisation is measured and discussed. The comparison of the polarization loop to the anhysteretic curve under compressive stress elucidates the effects on the stable equilibrium domain configuration and dynamic effects associated to dissipation.

HS-SPM Mapping of Ferroelectric Domain Dynamics with Combined Nanoscale and Nanosecond Resolution

NASA Astrophysics Data System (ADS)

Polomoff, Nicholas Alexander

The unique properties of ferroelectric materials have been applied for a wide variety of device applications. In particular, properties such as spontaneous polarization and domain structure hysteresis at room temperature have rendered its application in nonvolatile memory devices such as FeRAMs. Along with the ever-present drive for smaller memory devices is the demand that they have increased operating speeds, longer retention times, lower power requirements and better overall reliability. It is therefore pertinent that further investigation of the dynamics, kinetics and mechanisms involved with ferroelectric domain polarization reversal at nanoscale lengths and temporal durations be conducted to optimize future ferroelectric based nonvolatile memory devices. Accordingly High Speed Piezoforce Microscopy (HSPFM) will be employed to directly investigate and observe the dynamic nucleation and growth progression of ferroelectric domain polarization reversal processes in thin epitaxial deposited PZT films. The capabilities of HSPFM will allow for in-situ direct observation of nascent dynamic domain polarization reversal events with nanoscale resolution. Correlations and characterization of the thin ferroelectric film samples will be made based on the observed polarization reversal dynamics and switching mechanism with respect to their varying strain states, compositions, and/or orientations. Electrical pulsing schemes will also be employed to enhance the HSPFM procedure to achieve nanoscale temporal resolution of nascent domain nucleation and growth events. A unique pulsing approach is also proposed, and tested, to improve power consumption during switching. Finally, artificial defects will be introduced into the PZT thin film by fabricating arrays of indentations with different shapes and loads. These controlled indents will result in the introduction of different stress states of compression and tension into the ferroelectric thin film. It is hypothesized that these different stress states will have a dramatic effect upon the polarization reversal process, domain nucleation and growth dynamics, as well as the device's overall performance. It is the aim of the research presented in this dissertation to leverage the superior lateral and temporal resolution of the HSPFM technique to observe the influence that a variety of different variables have upon polarization reversal and dynamic ferroelectric domain behavior in attempt to propose conventions in which such variables can be employed for the development of high functioning and overall better operating ferroelectric based devices.

Functional electronic inversion layers at ferroelectric domain walls

NASA Astrophysics Data System (ADS)

Mundy, J. A.; Schaab, J.; Kumagai, Y.; Cano, A.; Stengel, M.; Krug, I. P.; Gottlob, D. M.; Doğanay, H.; Holtz, M. E.; Held, R.; Yan, Z.; Bourret, E.; Schneider, C. M.; Schlom, D. G.; Muller, D. A.; Ramesh, R.; Spaldin, N. A.; Meier, D.

2017-06-01

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation--and eventual activation--of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.

Lattice rotation vortex observed between polar nanoregions in relaxor-ferroelectric (1-x)Pb(Zn1/3Nb2/3) O3-xPbTiO3 single crystal

NASA Astrophysics Data System (ADS)

Shao, Yu-Tsun; Zuo, Jian-Min

Domain walls (DWs) play a critical role in determining the polarization switching behavior in relaxor-based ferroelectric crystals. The domains in relaxor-ferroelectric crystals consist of polar nanoregions (PNRs) and their interface is poorly understood. Here, we report an energy-filtered (EF-) scanning convergent beam electron diffraction (SCBED) study for the identification of PNRs and determination of their interface. With the aid of electro dynamical diffraction simulation, nanometer-sized PNRs having monoclinic Pm (MC) symmetry in single crystal PZN- 8%PT were identified. Lattice rotation vortices having an average radius of 7 nm at the 50° DWs were revealed by maps of crystal orientations, domain configurations, symmetry breaking. Such measurements suggest the merging of 2D and 1D topological defects, with implications for domain-switching mechanisms in relaxor ferroelectric crystals. The interplay between polarization, charge, and strain degrees of freedom suggests a complex landscape of topological defects in ferroelectrics that may be explored for a new form of nanoscale ferroelectric devices. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign.

Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators.

PubMed

Li, Lei; Wu, Menghao

2017-06-27

Vertical ferroelectricity in two-dimensional (2D) materials is desirable for high-density data storage without quantum tunneling or high power consumption/dissipation, which still remains elusive due to the surface-depolarizing field. Herein, we report the first-principles evidence of 2D vertical ferroelectricity induced by interlayer translation, which exists extensively in the graphitic bilayer of BN, AlN, ZnO, MoS 2 , GaSe, etc.; the bilayer of some 2D ferromagnets like MXene, VS 2 , and MoN 2 can be even multiferroics with switchable magnetizations upon ferroelectric switching, rendering efficient reading and writing for high-density data storage. In particular, the electromechanical coupling between interlayer translation and potential can be used to drive the flow of electrons as nanogenerators for harvesting energy from human activities, ocean waves, mechanical vibration, etc. A ferroelectric superlattice with spatial varying potential can be formed in a bilayer Moire pattern upon a small twist or strain, making it possible to generate periodic n/p doped-domains and shape the periodicity of the potential energy landscape. Finally, some of their multilayer counterparts with wurtzite structures like a ZnO multilayer are revealed to exhibit another type of vertical ferroelectricity with greatly enhanced polarizations.

Optical and electro-optic anisotropy of epitaxial PZT thin films

NASA Astrophysics Data System (ADS)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3

PubMed Central

Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin

2017-01-01

Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors. PMID:28216672

Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3.

PubMed

Yang, Ming-Min; Bhatnagar, Akash; Luo, Zheng-Dong; Alexe, Marin

2017-02-20

Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO 3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

NASA Astrophysics Data System (ADS)

Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

2018-01-01

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

NASA Astrophysics Data System (ADS)

Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

2017-12-01

Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

Phase transitions and domain structures in multiferroics

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia

2011-12-01

Thin film ferroelectrics and multiferroics are two important classes of materials interesting both from a scientific and a technological prospective. The volatility of lead and bismuth as well as environmental issues regarding the toxicity of lead are two disadvantages of the most commonly used ferroelectric random access memory (FeRAM) materials such as Pb(Zr,Ti)O3 and SrBi2Ta2O9. Therefore lead-free thin film ferroelectrics are promising substitutes as long as (a) they can be grown on technologically important substrates such as silicon, and (b) their T c and Pr become comparable to that of well established ferroelectrics. On the other hand, the development of functional room temperature ferroelectric ferromagnetic multiferroics could lead to very interesting phenomena such as control of magnetism with electric fields and control of electrical polarization with magnetic fields. This thesis focuses on the understanding of material structure-property relations using nonlinear optical spectroscopy. Nonlinear spectroscopy is an excellent tool for probing the onset of ferroelectricity, and domain dynamics in strained ferroelectrics and multiferroics. Second harmonic generation was used to detect ferroelectricity and the antiferrodistortive phase transition in thin film SrTiO3. Incipient ferroelectric CaTiO3 has been shown to become ferroelectric when strained with a combination of SHG and dielectric measurements. The tensorial nature of the induced nonlinear polarization allows for probing of the BaTiO3 and SrTiO3 polarization contributions in nanoscale BaTiO3/SrTiO3 superlattices. In addition, nonlinear optics was used to demonstrate ferroelectricity in multiferroic EuTiO3. Finally, confocal SHG and Raman microscopy were utilized to visualize polar domains in incipient ferroelectric and ferroelastic CaTiO3.

Fast switchable ferroelectric liquid crystal gratings with two electro-optical modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Ying; Srivastava, A. K., E-mail: abhishek-srivastava-lu@yahoo.co.in; Chigrinov, V. G.

In this article, we reveal a theoretical and experimental illustration of the Ferroelectric liquid crystal (FLC) grating fabricated by mean of patterned alignment based on photo-alignment. The complexity related to the mismatching of the predefined alignment domains on the top and bottom substrate has been avoided by incorporating only one side photo aligned substrate while the other substrate does not have any alignment layer. Depending on the easy axis in the said alignment domains and the azimuth plane of the impinging polarized light, the diffracting element can be tuned in two modes i.e. DIFF/OFF switchable and DIFF/TRANS switchable modes, whichmore » can be applied to different applications. The diffraction profile has been illustrated theoretically that fits well with the experimental finding and thus the proposed diffraction elements with fast response time and high diffraction efficiency could find application in many modern devices.« less

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

NASA Astrophysics Data System (ADS)

Xiao, Z.; Poddar, Shashi; Ducharme, Stephen; Hong, X.

2013-09-01

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent ζ ranges from 0.39 to 0.48 and the DW creep exponent μ varies from 0.20 to 0.28, revealing an unexpected effective dimensionality of ˜1.5 that is independent of film thickness. Our results suggest predominantly 2D ferroelectricity in the layered polymer and we attribute the fractal dimensionality to DW deroughening due to the correlations between the in-plane and out-of-plane polarization, an effect that can be exploited to achieve high lateral domain density for developing nanoscale ferroelectrics-based applications.

Domain switching of fatigued ferroelectric thin films

NASA Astrophysics Data System (ADS)

Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

2014-05-01

We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Pankaj, E-mail: psharma@huskers.unl.edu; Poddar, Shashi; Ducharme, Stephen

2014-07-14

High-resolution vector piezoresponse force microscopy (PFM) has been used to investigate ferroelectric domains in thin vinylidene fluoride oligomer films fabricated by the Langmuir-Blodgett deposition technique. Molecular chains are found to be preferentially oriented normal to the substrate, and PFM imaging shows that the films are in ferroelectric β-phase with a predominantly in-plane polarization, in agreement with infrared spectroscopic ellipsometry and X-ray diffraction measurements. The fractal analysis of domain structure has yielded the Hausdorff dimension (D) in the range of ∼1.3–1.5 indicating a random-bond nature of the disorder potential, with domain size exhibiting Landau-Lifshitz-Kittel scaling.

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1982-01-01

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Resonant tunneling across a ferroelectric domain wall

NASA Astrophysics Data System (ADS)

Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

2018-04-01

Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films

PubMed Central

Hu, Wei Jin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tom

2014-01-01

In this work, switching dynamics of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 MV/m and 180° domain wall energy of 60 mJ/m2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications. PMID:24759786

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-10-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

A study of the applicability of nucleation theory to quasi-thermodynamic transformations of second and higher Ehrenfest-order

NASA Technical Reports Server (NTRS)

Barker, R. E., Jr.

1985-01-01

Transient and steady-state phenomena in temperature, stress, and electric, field intensity in ferroelectric polymers were investigated. The application and extension of the theory in the primary stage to the polarization domain nucleation and growth in ferroelectric polymers were developed. The kinetics of this growth were investigated. Expressions describing nucleation under the influence of an electric field were found through the expansion of the Gibbs' free energy in a Maclaurin series. The series was expanded in the electric field strength rather than the degree of undercooling. The resulting expressions were manipulated and applied to the case of nucleation of polarized domains in ferroelectric polymers. The kinetics of the nucleation and growth of polarized domains are also investigated. This was accomplished through the modification of the Johnson-Mehl-Avrami treatment of crystallization kinetics to be applicable to the growth of polarization domains in ferroelectric materials.

Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

NASA Astrophysics Data System (ADS)

Morozovska, Anna N.; Eliseev, Eugene A.; Kurchak, Anatolii I.; Morozovsky, Nicholas V.; Vasudevan, Rama K.; Strikha, Maksym V.; Kalinin, Sergei V.

2017-12-01

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigate the role of the surface ion formation energy on the polarization states and its reversal mechanisms, domain structure, and corresponding phase diagrams of ferroelectric thin films. Using 3D finite element modeling, we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and the dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and polydomain ferroelectric, ferroionic, antiferroionic, and nonferroelectric states as a function of surface ion formation energy, film thickness, applied voltage, and temperature. We further map the analytical theory for 1D systems onto an effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. This approach allows us to perform an overview of the ferroionic system phase diagrams and explore the specifics of polarization reversal and domain evolution phenomena.

Investigation about relationships between the symmetries of ferroelectric crystal Ca{sub 0.28}Ba{sub 0.72}Nb{sub 2}O{sub 6} and second-harmonic patterns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Tianxiang; Yu, Haohai, E-mail: haohaiyu@sdu.edu.cn; Zhang, Huaijin, E-mail: huaijinzhang@sdu.edu.cn

2015-08-07

The broadband quasi-phase matching (QPM) process in a uniaxial ferroelectric crystal Ca{sub 0.28}Ba{sub 0.72}Nb{sub 2}O{sub 6} (CBN-28) was demonstrated with the second-harmonic wavelength range from 450 nm to 650 nm, and the relationship between the symmetries of CBN-28 and the second-harmonic patterns was experimentally and theoretically investigated based on the random anti-parallel domains in the crystal and QPM conditions. The dependences of frequency-doubled patterns on the wavelength and anisotropy of the nonlinear crystal were also studied, and the frequency-doubled photons were found to be trapped on circles. By analyzing the light-matter interacting Hamiltonians, the trapping force for second-harmonic photons was found tomore » be centripetal and tunable by the fundamental lasers, and the variation tendencies of the rotational velocity of second-harmonic generation photons could also be predicated. The results indicate that the CBN-28 ferroelectric crystal is a promising nonlinear optical material for the generation of broadband frequency-doubled waves, and the analysis on centripetal force based on the interaction Hamiltonians may provide a novel recognition for the investigation of QPM process to be further studied.« less

Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

DOE PAGES

Hassanpour, E.; Wegmayr, V.; Schaab, J.; ...

2016-04-12

We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO 3 . Hole- and electron doping are achieved through the growth of Er 1-x Ca x MnO 3 and Er 1-x Zr x MnO 3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO 3 without destroyingmore » its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.« less

Losses in Ferroelectric Materials

PubMed Central

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-01-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed. PMID:25814784

Losses in Ferroelectric Materials.

PubMed

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-03-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed.

Bandgap behavior and singularity of the domain-induced light scattering through the pressure-induced ferroelectric transition in relaxor ferroelectric AxBa1-xNb2O6 (A: Sr,Ca)

NASA Astrophysics Data System (ADS)

Ruiz-Fuertes, J.; Gomis, O.; Segura, A.; Bettinelli, M.; Burianek, M.; Mühlberg, M.

2018-01-01

In this letter, we have investigated the electronic structure of AxBa1-xNb2O6 relaxor ferroelectrics on the basis of optical absorption spectroscopy in unpoled single crystals with A = Sr and Ca under high pressure. The direct character of the fundamental transition could be established by fitting Urbach's rule to the photon energy dependence of the absorption edge yielding bandgaps of 3.44(1) eV and 3.57(1) eV for A = Sr and Ca, respectively. The light scattering by ferroelectric domains in the pre-edge spectral range has been studied as a function of composition and pressure. After confirming with x-ray diffraction the occurrence of the previously observed ferroelectric to paraelelectric phase transition at 4 GPa, the light scattering produced by micro- and nano-ferroelectric domains at 3.3 eV in Ca0.28Ba0.72Nb2O6 has been probed. The direct bandgap remains virtually constant under compression with a drop of only 0.01 eV around the phase transition. Interestingly, we have also found that light scattering by the polar nanoregions in the paraelectric phase is comparable to the dispersion due to ferroelectric microdomains in the ferroelectric state. Finally, we have obtained that the bulk modulus of the ferroelectric phase of Ca0.28Ba0.72Nb2O6 is B0 = 222(9) GPa.

Optical, electrical and elastic properties of ferroelectric domain walls in lithium niobate and lithium titanate

NASA Astrophysics Data System (ADS)

Kim, Sungwon

Ferroelectric LiNbO3 and LiTaO3 crystals have developed, over the last 50 years as key materials for integrated and nonlinear optics due to their large electro-optic and nonlinear optical coefficients and a broad transparency range from 0.4 mum-4.5 mum wavelengths. Applications include high speed optical modulation and switching in 40GHz range, second harmonic generation, optical parametric amplification, pulse compression and so on. Ferroelectric domain microengineering has led to electro-optic scanners, dynamic focusing lenses, total internal reflection switches, and quasi-phase matched (QPM) frequency doublers. Most of these applications have so far been on non-stoichiometric compositions of these crystals. Recent breakthroughs in crystal growth have however opened up an entirely new window of opportunity from both scientific and technological viewpoint. The growth of stoichiometric composition crystals has led to the discovery of many fascinating effects arising from the presence or absence of atomic defects, such as an order of magnitude changes in coercive fields, internal fields, domain backswitching and stabilization phenomenon. On the nanoscale, unexpected features such as the presence of wide regions of optical contrast and strain have been discovered at 180° domain walls. Such strong influence of small amounts of nonstoichiometric defects on material properties has led to new device applications, particularly those involving domain patterning and shaping such as QPM devices in thick bulk crystals and improved photorefractive damage compositions. The central focus of this dissertation is to explore the role of nonstoichiometry and its precise influence on macroscale and nanoscale properties in lithium niobate and tantalate. Macroscale properties are studied using a combination of in-situ and high-speed electro-optic imaging microscopy and electrical switching experiments. Local static and dynamic strain properties at individual domain walls is studied using X-ray synchrotron imaging with and without in-situ electric fields. Nanoscale optical properties are studied using Near Field Scanning Optical Microscopy(NSOM). Finite Difference Time Domain(FDTD) codes, Beam Propagation Method(BPM) codes and X-ray tracing codes have been developed to successfully simulate NSOM images and X-ray topography images to extract the local optical and strain properties, respectively. A 3-D ferroelectric domain simulation code based on Time Dependent Ginzburg Landau(TDGL) theory and group theory has been developed to understand the nature of these local wall strains and the preferred wall orientations. By combining these experimental and numerical tools, We have also proposed a defect-dipole model and a mechanism by which the defect interacts with the domain walls. This thesis has thus built a more comprehensive picture of the influence of defects on domain walls on nanoscale and macroscale, and raises new scientific questions about the exact nature of domain walls-defect interactions. Besides the specific problem of ferroelectrics, the experimental and simulation tools, developed in this thesis will have wider application in the area of materials science.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

NASA Astrophysics Data System (ADS)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

Glass-Glass Transitions by Means of an Acceptor-Donor Percolating Electric-Dipole Network

NASA Astrophysics Data System (ADS)

Zhang, Le; Lou, Xiaojie; Wang, Dong; Zhou, Yan; Yang, Yang; Kuball, Martin; Carpenter, Michael A.; Ren, Xiaobing

2017-11-01

We report the ferroelectric glass-glass transitions in KN (K+/Nb5 +) -doped BaTiO3 ferroelectric ceramics, which have been proved by x-ray diffraction profile and Raman spectra data. The formation of glass-glass transitions can be attributed to the existence of cubic (C )-tetragonal (T )-orthorhombic (O )-rhombohedral (R ) ferroelectric transitions in short-range order. These abnormal glass-glass transitions can perform very small thermal hysteresis (approximately 1.0 K ) with a large dielectric constant (approximately 3000), small remanent polarization Pr , and relative high maximum polarization Pm remaining over a wide temperature range (220-350 K) under an electrical stimulus, indicating the potential applications in dielectric recoverable energy-storage devices with high thermal reliability. Further phase field simulations suggest that these glass-glass transitions are induced by the formation of a percolating electric defect-dipole network (PEDN). This proper PEDN breaks the long-range ordered ferroelectric domain pattern and results in the local phase transitions at the nanoscale. Our work may further stimulate the fundamental physical theory and accelerate the development of dielectric energy-storing devices.

Complex oxide ferroelectrics: Electrostatic doping by domain walls

DOE PAGES

Maksymovych, Petro

2015-06-19

Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO 3 and SrTiO 3 supports a 2D electron gas1 with high mobility of >1,000 cm 2 V -1 s -1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). Ifmore » the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO 3 down to the nanoscale.« less

Electro-active device using radial electric field piezo-diaphragm for sonic applications

NASA Technical Reports Server (NTRS)

Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

2005-01-01

An electro-active transducer for sonic applications includes a ferroelectric material sandwiched by first and second electrode patterns to form a piezo-diaphragm coupled to a mounting frame. When the device is used as a sonic actuator, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when voltage is applied to the electrode patterns. When the device is used as a sonic sensor, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when the ferroelectric material experiences deflection in a direction substantially perpendicular thereto. In each case, the electrode patterns are designed to cause the electric field to: i) originate at a region of the ferroelectric material between the first and second electrode patterns, and ii) extend radially outward from the region of the ferroelectric material (at which the electric field originates) and substantially parallel to the plane of the ferroelectric material. The mounting frame perimetrically surrounds the peizo-diaphragm and enables attachment of the piezo-diaphragm to a housing.

Molecular dynamics simulations of ferroelectric domain formation by oxygen vacancy

NASA Astrophysics Data System (ADS)

Zhu, Lin; You, Jeong Ho; Chen, Jinghong; Yeo, Changdong

2018-05-01

An oxygen vacancy, known to be detrimental to ferroelectric properties, has been investigated numerically for the potential uses to control ferroelectric domains in films using molecular dynamics simulations based on the first-principles effective Hamiltonian. As an electron donor, an oxygen vacancy generates inhomogeneous electrostatic and displacement fields which impose preferred polarization directions near the oxygen vacancy. When the oxygen vacancies are placed at the top and bottom interfaces, the out-of-plane polarizations are locally developed near the interfaces in the directions away from the interfaces. These polarizations from the interfaces are in opposite directions so that the overall out-of-plane polarization becomes significantly reduced. In the middle of the films, the in-plane domains are formed with containing 90° a 1/a 2 domain walls and the films are polarized along the [1 1 0] direction even when no electric field is applied. With oxygen vacancies placed at the top interface only, the films exhibit asymmetric hysteresis loops, confirming that the oxygen vacancies are one of the possible sources of ferroelectric imprint. It has been qualitatively demonstrated that the domain structures in the imprint films can be turned on and off by controlling an external field along the thickness direction. This study shows qualitatively that the oxygen vacancies can be utilized for tuning ferroelectric domain structures in films.

Complete stress-induced depolarization of relaxor ferroelectric crystals without transition through a non-polar phase

NASA Astrophysics Data System (ADS)

Shkuratov, Sergey I.; Baird, Jason; Antipov, Vladimir G.; Hackenberger, Wesley; Luo, Jun; Zhang, Shujun; Lynch, Christopher S.; Chase, Jay B.; Jo, Hwan R.; Roberts, Christopher C.

2018-03-01

The development of relaxor ferroelectric single crystal technology is driven by the ability to tailor ferroelectric properties through domain engineering not achievable in polycrystalline materials. In this study, three types of domain-engineered rhombohedral Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals were subjected to transverse high strain rate loading. The experimental results indicate that the domain configuration has a significant effect on the stress-induced depolarization and the associated charge released. A complete depolarization of the single-domain crystals with 3m symmetry is observed, while multidomain crystals with 4mm and mm2 symmetries retain a fraction of their initial remanent polarization. The complete depolarization of single-domain crystals is unique without transition to a non-polar phase, with a stress-induced charge density of 0.48 C/m2. This is up to three times higher than that of the multidomain crystals and PbZrxTi1-xO3 ferroelectric ceramics that are critical for ultrahigh-power transducer applications. The main offering of this work is to propose a detailed mechanism for complete stress-induced depolarization in ferroelectric crystals which does not involve an intermediate transformation to a non-polar phase.

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

NASA Astrophysics Data System (ADS)

Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

2018-05-01

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie; Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4

2015-12-28

Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarizationmore » as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity.« less

Ferroelastic domain switching dynamics under electrical and mechanical excitations.

PubMed

Gao, Peng; Britson, Jason; Nelson, Christopher T; Jokisaari, Jacob R; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-02

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Ferroelastic domain switching dynamics under electrical and mechanical excitations

NASA Astrophysics Data System (ADS)

Gao, Peng; Britson, Jason; Nelson, Christopher T.; Jokisaari, Jacob R.; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M.; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-01

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

NASA Astrophysics Data System (ADS)

Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-Kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

PubMed

Kim, Tae Heon; Yoon, Jong-Gul; Baek, Seung Hyub; Park, Woong-kyu; Yang, Sang Mo; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Noh, Tae Won

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

PubMed Central

Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

2015-01-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields. PMID:26130159

Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

NASA Astrophysics Data System (ADS)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Analytical saturated domain orientation textures and electromechanical properties of ferroelectric ceramics due to electric/mechanical poling

NASA Astrophysics Data System (ADS)

Li, F. X.; Rajapakse, R. K. N. D.

2007-03-01

Saturated domain orientation textures of three types of pseudocubic (tetragonal, rhombohedral, and orthorhombic) ferroelectric ceramics after complete electric and uniaxial tension (compression) poling is studied analytically in this paper. A one-dimensional orientation distribution function (ODF) of the domain polar vectors is explicitly derived from the uniform inverse pole figures of the poling field axes on a stereographic projection with respect to the fixed crystallite coordinates. The analytical ODF is used to obtain the analytical solutions of saturated polarization and strain after electric/mechanical poling. Based on the closed form solution of the saturated domain orientation textures, the resultant intrinsic electromechanical properties of ferroelectric ceramics, which depend only on the ODF and properties of the corresponding single crystals, are obtained. The results show how the macroscopic symmetries of ferroelectric crystals change from 4mm (tetragonal), 3m (rhombohedral), and mm2 (orthorhombic) single crystals to a ∞mm (transversely isotropic) completely poled ceramic.

Negative capacitance in multidomain ferroelectric superlattices

NASA Astrophysics Data System (ADS)

Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

2016-06-01

The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

Domain structure sequence in ferroelectric Pb(Zr0.2Ti0.8)O3 thin film on MgO

NASA Astrophysics Data System (ADS)

Janolin, Pierre-Eymeric; Fraisse, Bernard; Dkhil, Brahim; Le Marrec, Françoise; Ringgaard, Erling

2007-04-01

The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature-dependent x-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure (a /c/a/c to a1/a2/a1/a2), and TCfilm=825K, where the film undergoes a ferroelectric-paraelectric phase transition. The film remains tetragonal on the whole range of temperature investigated. The evolutions of the domain structure and lattice parameters were found to be in very good agreement with the calculated domain stability map and theoretical temperature-misfit strain phase diagram, respectively.

Symmetry breaking and electrical frustration during tip-induced polarization switching in the non-polar cut of lithium niobate single crystals

DOE PAGES

Ievlev, Anton; Alikin, Denis O.; Morozovska, A. N.; ...

2014-12-15

Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching in the non-polar cuts of uniaxial ferroelectrics. In this case, in-plane component of polarization vector switches, allowing for detailed observations of resultant domain morphologies. We observe surprising variability of resultant domain morphologies stemming from fundamental instability of formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling vertical tip position allows the polarity of the switching to be controlled. This represents very unusual formmore » of symmetry breaking where mechanical motion in vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed.« less

An energy-consistent fracture model for ferroelectrics

NASA Astrophysics Data System (ADS)

Miao, Hongchen; Li, Faxin

2017-02-01

The fracture behavior of ferroelectrics has been intensively studied in recent decades, though currently a widely accepted fracture mechanism is still lacking. In this work, enlightened by previous experimental observations that crack propagation in ferroelectrics is always accompanied by domain switching, we propose a micromechanical model in which both crack propagation and domain switching are controlled by energy-based criteria. Both electric energy and mechanical energy can induce domain switching, while only mechanical energy can drive crack propagation. Furthermore, constrained domain switching is considered in this model, leading to the gradient domain switching zone near the crack tip. Analysis results show that stress-induced ferroelastic switching always has a toughening effect as the mechanical energy release rate serves as the driving force for both fracture and domain switching. In comparison, the electric-field-induced switching may have either a toughening or detoughening effect. The proposed model can qualitatively agree with the existing experimental results.

Ferroelectric Domain Structure and Local Piezoelectric Properties of Lead-Free (Ka0.5Na0.5)NbO3 and BiFeO3-Based Piezoelectric Ceramics

PubMed Central

Alikin, Denis; Turygin, Anton; Kholkin, Andrei; Shur, Vladimir

2017-01-01

Recent advances in the development of novel methods for the local characterization of ferroelectric domains open up new opportunities not only to image, but also to control and to create desired domain configurations (domain engineering). The morphotropic and polymorphic phase boundaries that are frequently used to increase the electromechanical and dielectric performance of ferroelectric ceramics have a tremendous effect on the domain structure, which can serve as a signature of complex polarization states and link local and macroscopic piezoelectric and dielectric responses. This is especially important for the study of lead-free ferroelectric ceramics, which is currently replacing traditional lead-containing materials, and great efforts are devoted to increasing their performance to match that of lead zirconate titanate (PZT). In this work, we provide a short overview of the recent progress in the imaging of domain structure in two major families of ceramic lead-free systems based on BiFeO3 (BFO) and (Ka0.5Na0.5)NbO3 (KNN). This can be used as a guideline for the understanding of domain processes in lead-free piezoelectric ceramics and provide further insight into the mechanisms of structure–property relationship in these technologically important material families. PMID:28772408

In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

NASA Astrophysics Data System (ADS)

Guo, Hanzheng

Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some well-accepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated. For the initial poling process, microstructural origins for the piezoelectricity development in the three most promising lead-free piezoceramic systems were investigated. For the non-ergodic relaxor ferroelectric compositions ( x = 6% - 9%) in the (1-x)(Bi1/2Na 1/2)TiO3-xBaTiO3 system, well-developed piezoelectricity was realized at poling fields far below the coercive field and phase transition field. Such an unusual behavior is attributed to the electric field-induced irreversible P4bm nanodomains coalescence into thin lamellar domains prior to the phase transition. In the (K0.5 Na0.5)NbO3-based ceramics, as demonstrated by an archetypical polymorphic phase boundary (PPB) composition of 0.948(K 0.5Na0.5)NbO3-0.052LiSbO3, the origin of the excellent piezoelectric performance is due to a tilted monoclinic phase that emerges from the tetragonal and orthorhombic PPB at the poling fields beyond 14 kV/cm. This monoclinic phase, as manifested by the appearance of blotchy domains and 1/2{oeo} superlattice diffraction spots, was determined to possess a Pm symmetry with a 0b+c0 oxygen octahedra tilting and antiparallel cation displacements. For the PPB composition of x = 0.5 in the (1-x)Ba(Zr0.2Ti0.8 )O3-x(Ba0.7Ca0.3)TiO 3 solid solution system, the original multi-domain state was found to transform into a unique single-domain state with orthorhombic symmetry at very moderate poling fields of 3 6 kV/cm. This single-domain state is suggested to be primarily responsible for the observed large piezoelectricity due to its significant elastic softening. In the electrical reversal process, a highly unusual phenomenon of electric field-induced ferroelectric-to-relaxor phase transition was directly observed in a lead-free composition of [(Bi1/2Na1/2)0.95 Ba0.05]0.98La0.02TiO3. It is manifested by the disruption of large ferroelectric domains with long range polar order into polar nanodomains with short range orders when the polarity of electric field is reversed. This observation was further rationalized by a phenomenological model that takes the large difference in kinetics between the phase transition and the polarization reversal processes into account. During the electrical cycling process, the microstructural mechanisms for electric fatigue behaviors of two ceramics were investigated. In 0.7Pb(Mg 1/3Nb2/3)O3-0.3PbTiO3, the frozen domain configuration after 103 cycles is responsible for the pronounced functionality degradation. Both seed inhibition and domain wall pinning mechanisms were suggested to be the reasons for the observed fatigue behavior. In the polycrystalline ceramic of [(Bi1/2Na1/2)0.95Ba 0.05]0.98La0.02TiO3, a novel phenomenological mechanism of domain fragmentation was found in addition to the domain wall pinning mechanism. Domain fragmentation contributes to the switchable polarization reduction by breaking the long-range polar orders, as visualized by the decomposition of large domains into domain fragments upon bipolar electrical cycling.

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

DOE PAGES

Damodaran, Anoop; Okatan, M. B.; Kacher, J.; ...

2016-02-15

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-xTimore » xO 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damodaran, Anoop; Okatan, M. B.; Kacher, J.

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-xTimore » xO 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.« less

Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

DOE PAGES

Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; ...

2015-07-13

The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr 0.2Ti 0.8)O3) junction in applied electric field. We revealed anmore » up to 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.« less

A new non-destructive readout by using photo-recovered surface potential contrast

NASA Astrophysics Data System (ADS)

Wang, Le; Jin, Kui-Juan; Gu, Jun-Xing; Ma, Chao; He, Xu; Zhang, Jiandi; Wang, Can; Feng, Yu; Wan, Qian; Shi, Jin-An; Gu, Lin; He, Meng; Lu, Hui-Bin; Yang, Guo-Zhen

2014-11-01

Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability, non-destructive readout and high intensity storage. As a non-contact and non-destructive information readout method, surface potential has never been paid enough attention because of the unavoidable decay of the surface potential contrast between oppositely polarized domains. That is mainly due to the recombination of the surface movable charges around the domain walls. Here, by introducing a laser beam into the combination of piezoresponse force microscopy and Kelvin probe force microscopy, we demonstrate that the surface potential contrast of BiFeO3 films can be recovered under light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on BiFeO3 films to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory.

Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces.

PubMed

Nelson, Christopher T; Winchester, Benjamin; Zhang, Yi; Kim, Sung-Joo; Melville, Alexander; Adamo, Carolina; Folkman, Chad M; Baek, Seung-Hyub; Eom, Chang-Beom; Schlom, Darrell G; Chen, Long-Qing; Pan, Xiaoqing

2011-02-09

The polarization of the ferroelectric BiFeO(3) sub-jected to different electrical boundary conditions by heterointerfaces is imaged with atomic resolution using a spherical aberration-corrected transmission electron microscope. Unusual triangular-shaped nanodomains are seen, and their role in providing polarization closure is understood through phase-field simulations. Heterointerfaces are key to the performance of ferroelectric devices, and this first observation of spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces reveals properties unlike the surrounding film including mixed Ising-Néel domain walls, which will affect switching behavior, and a drastic increase of in-plane polarization. The importance of magnetization closure has long been appreciated in multidomain ferromagnetic systems; imaging this analogous effect with atomic resolution at ferroelectric heterointerfaces provides the ability to see device-relevant interface issues. Extension of this technique to visualize domain dynamics is envisioned.

Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions

DOE PAGES

Eliseev, Eugene A.; Kalinin, Sergei V.; Morozovska, Anna N.

2015-01-21

General features of finite size effects in the ferroelectric-semiconductor film under open-circuit electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different from the characteristics of short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. Performed analysis is relevant for the quantitative description of free-standing ferroelectric films phase diagrams andmore » polar properties. Also our results can be useful for the explanation of the scanning-probe microscopy experiments on free ferroelectric surfaces.« less

Writing and Reading of Ultrathin Ferroelectric Domains on Commensurate SrTiO3 on Silicon

NASA Astrophysics Data System (ADS)

Levy, Jeremy; Cen, Cheng; Sleasman, Charles R.; Warusawithana, Maitri; Schlom, Darrell G.

2008-03-01

Ferroelectricity in ultrathin epitaxial SrTiO3 grown commensurately by oxide-molecular beam epitaxy (MBE) on silicon substrates was investigated using piezoforce microscopy (PFM). A series of samples containing n molecular layers (ML) of SrTiO3 (n = 3, 4, 5, 6, 8, 10, 20) was grown on silicon substrates. Room-temperature ferroelectricity was observed for samples containing n = 5, 6, 8, 10 ML. Temperature-dependent measurements indicate that the sample with n = 5 exhibits a ferroelectric phase transition at Tc˜317 K. Sample with n = 6 remains ferroelectric up to at least 393K. Polar domains created on the n = 6 was found to be stable at room temperature for more than 72 hours. The implications of these results for fundamental and device-related applications will be discussed briefly.

Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seyedhosseini, E., E-mail: Seyedhosseini@ua.pt; Ivanov, M.; Bdikin, I.

2015-08-21

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulsemore » duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.« less

Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Xunlin

2010-07-01

Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called “ferroelectrets”), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties thatmore » may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.« less

Constitutive relations of ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Su, Yu

The objective of this thesis is to obtain a better understanding on the fundamental constitutive behavior of ferroelectric ceramics based on the physics of phase transition, micromechanics of heterogeneous materials, and principles of irreversible thermodynamics. Within this framework, a self-consistent model is developed to investigate the electromechanical responses of ferroelectric polycrystals under temperature change and electromechanical loading. Cooling of a paraelectric crystal below its curie temperature Tc would result in spontaneous polarization, whereas electromechanical loading on a poled crystal could lead to domain switch. Domain growth and reorientation inside ferroelectric crystals are studied in light of these phase transition and domain switch. In this process, the change of the effective elastic, dielectric and piezoelectric constants during the evolution of microstructures are examined. In addition, hysteresis loops for the electric displacement and other related phenomena are computed under cyclic electric load. On top of all methods implemented in this work, the kinetic equation derived from the irreversible thermodynamics is the key to study the domain evolution in ferroelectric crystals. The kinetic relation not only governs the growth of new domain in a ferroelectric crystal, but it also determines the onset of phase transition. This characteristic is used to study the effect of hydrostatic pressure on the shift of Curie temperature of a ferroelectric crystal. Based on the derived expressions, it is observed that the deriving force can increase or decrease upon applied hydrostatic mechanical loading, depending on the change of electromechanical moduli, eigenstrain and electro-polarization. Several typical cases are computed and it is found that the change of the electromechanical moduli during phase transformation plays the key role in the shift of Curie temperature. Since ferroelectric ceramics are in a polycrystal form, a self-consistent model is used to examine the issues involved. In this model, each grain is represented by a spherical inclusion embedded in an infinitely extended piezoelectric matrix, and the inclusion further possesses an eigenstrain and eigen polarization. Secant relations between the polycrystal-matrix and the embedded inclusion are established by extending Hill's [1] incremental relations. An iterative computational program is developed for this self-consistent model.

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

NASA Astrophysics Data System (ADS)

Lee, Jung-Kun; Nastasi, Michael

2012-11-01

The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

Data encoding based on the shape of the ferroelectric domains produced by a scanning probe microscopy tip

DOE PAGES

Ievlev, Anton; Kalinin, Sergei V.

2015-05-28

Ferroelectric materials are broadly considered for information storage due to extremely high storage and information processing densities they enable. To date, ferroelectric based data storage has invariably relied on formation of cylindrical domains, allowing for binary information encoding. Here we demonstrate and explore the potential of high-density encoding based on domain morphology. We explore the domain morphogenesis during the tip-induced polarization switching by sequences of positive and negative pulses in a lithium niobate single-crystal and demonstrate the principal of information coding by shape and size of the domains. We applied cross-correlation and neural network approaches for recognition of the switchingmore » sequence by the shape of the resulting domains and establish optimal parameters for domain shape recognition. These studies both provide insight into the highly non-trivial mechanism of domain switching and potentially establish a new paradigm for multilevel information storage and content retrieval memories. Furthermore, this approach opens a pathway to exploration of domain switching mechanisms via shape analysis.« less

Effect of geometric configuration on the electrocaloric properties of nanoscale ferroelectric materials

NASA Astrophysics Data System (ADS)

Hou, Xu; Li, Huiyu; Shimada, Takahiro; Kitamura, Takayuki; Wang, Jie

2018-03-01

The electrocaloric properties of ferroelectrics are highly dependent on the domain structure in the materials. For nanoscale ferroelectric materials, the domain structure is greatly influenced by the geometric configuration of the system. Using a real-space phase field model based on the Ginzburg-Landau theory, we investigate the effect of geometric configurations on the electrocaloric properties of nanoscale ferroelectric materials. The ferroelectric hysteresis loops under different temperatures are simulated for the ferroelectric nano-metamaterials with square, honeycomb, and triangular Archimedean geometric configurations. The adiabatic temperature changes (ATCs) for three ferroelectric nano-metamaterials under different electric fields are calculated from the Maxwell relationship based on the hysteresis loops. It is found that the honeycomb specimen exhibits the largest ATC of Δ T = 4.3 °C under a field of 391.8 kV/cm among three geometric configurations, whereas the square specimen has the smallest ATC of Δ T = 2.7 °C under the same electric field. The different electrocaloric properties for three geometric configurations stem from the different domain structures. There are more free surfaces perpendicular to the electric field in the square specimen than the other two specimens, which restrict more polarizations perpendicular to the electric field, resulting in a small ATC. Due to the absence of free surfaces perpendicular to the electric field in the honeycomb specimen, the change of polarization with temperature in the direction of the electric field is more easy and thus leads to a large ATC. The present work suggests a novel approach to obtain the tunable electrocaloric properties in nanoscale ferroelectric materials by designing their geometric configurations.

Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films

PubMed Central

Oka, Daichi; Hirose, Yasushi; Kamisaka, Hideyuki; Fukumura, Tomoteru; Sasa, Kimikazu; Ishii, Satoshi; Matsuzaki, Hiroyuki; Sato, Yukio; Ikuhara, Yuichi; Hasegawa, Tetsuya

2014-01-01

Compressively strained SrTaO2N thin films were epitaxially grown on SrTiO3 substrates using nitrogen plasma-assisted pulsed laser deposition. Piezoresponse force microscopy measurements revealed small domains (101–102 nm) that exhibited classical ferroelectricity, a behaviour not previously observed in perovskite oxynitrides. The surrounding matrix region exhibited relaxor ferroelectric-like behaviour, with remanent polarisation invoked by domain poling. First-principles calculations suggested that the small domains and the surrounding matrix had trans-type and a cis-type anion arrangements, respectively. These experiments demonstrate the promise of tailoring the functionality of perovskite oxynitrides by modifying the anion arrangements by using epitaxial strain.

Continuum analysis of the nucleus growth of reverse domains in large ferroelectric crystals

NASA Astrophysics Data System (ADS)

Neumeister, Peter; Balke, Herbert; Lupascu, Doru C.

2009-04-01

Polarization reversal in ferroelectrics arises due to domain nucleation and domain wall motion. The nucleation of reverse domains at crystal boundaries is the fundamental initiation process observed in single crystals. The classical continuum approach by Landauer determines an insurmountable energy barrier to extrinsic domain nucleation. We rediscuss the continuum approach. Predetermined surface states are found to be a misleading concept. Alternate energy contributions, for example, due to a dead layer or due to charge injection as well as reduced domain wall energy and anisotropy of domain wall energy, have to be included into a convincing picture of domain nucleation.

Phase-field model of domain structures in ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y. L.; Hu, S. Y.; Liu, Z. K.

A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic{r_arrow}tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. {copyright} 2001 American Institute of Physics.

Radiation-damage-assisted ferroelectric domain structuring in magnesium-doped lithium niobate

NASA Astrophysics Data System (ADS)

Jentjens, L.; Peithmann, K.; Maier, K.; Steigerwald, H.; Jungk, T.

2009-06-01

Irradiation of 5% magnesium-doped lithium niobate crystals (LiNbO3:Mg) with high-energy, low-mass 3He ions, which are transmitted through the crystal, changes the domain reversal properties of the material. This enables easier domain engineering compared to non-irradiated material and assists the formation of small-sized periodically poled domains in LiNbO3:Mg. Periodic domain structures exhibiting a width of ≈520 nm are obtained in radiation-damaged sections of the crystals. The ferroelectric poling behavior between irradiated and non-treated material is compared.

Giant electrocaloric effect in a cracked ferroelectrics

NASA Astrophysics Data System (ADS)

Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

2018-04-01

The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

DOE PAGES

Neumayer, Sabine M.; Strelcov, Evgheni; Manzo, Michele; ...

2015-12-28

Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarizationmore » as well as atmospheric conditions. Additionally, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. In polarization dependent current flow, attributed to charged domain walls and band bending, it the rectifying ability of Mg: LN in combination with suitable metal electrodes that allow for further tailoring of conductivity is demonstrated.« less

Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior

NASA Astrophysics Data System (ADS)

Anton, Eva-Maria; García, R. Edwin; Key, Thomas S.; Blendell, John E.; Bowman, Keith J.

2009-01-01

A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.

Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

NASA Astrophysics Data System (ADS)

Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

2017-08-01

We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

The relative contribution of ferroelastic and ferroelectric texture to the character of a hard PZT ceramic

NASA Astrophysics Data System (ADS)

Key, Thomas Stallings

The development of ferroelastic (90°) texture in addition to ferroelectric (180°) texture is essential to maximizing the piezoelectric properties of many hard tetragonal PZTs, including Piezoetechnologies K270. Ferroelastic texture results from motion of domain walls that is dependent on an individual crystals orientation. Increases in ferroelastic texture raises the maximum net polarization that can be achieved by changes in ferroelectric texture. By studying a hard PZT poled under various temperature conditions, insight was gained into factors affecting the development of ferroelastic texture and how ferroelastic texture contributes to piezoelectric properties. Depinning proved to be the major barrier to preventing ferroelastic domain wall motion where strain based domain interactions and polar defect complexes on the domain level appear to be the dominant factors. Insight into the affect of increased domain texture on the relationship between the increasing magnitude of the remnant polarization (|Pr|) and the magnitude of the coercive field (|EC|) was gained by plotting |EC| vs. |Pr| as a function of poling time for a variety of poling temperatures. At low |Pr| values, |EC| increased rapidly as a function of increases in |Pr| regardless of the poling temperature. This relationship was characteristic of samples poled at 25 °C where increases in ferroelastic texture were largely suppressed. Because increases in polarization were still observable changes in ferroelectric texture most responsible for the polarization increase and like play a strong role in the initial |EC| vs. |Pr| relationship. As |Pr| increased beyond 5 to 8 iC/cm2, the slope of |EC| vs. |Pr| decreased where the reduction in slope increased with poling temperature. This only occurred in samples poled at elevated temperatures where ferroelastic texture was know to ultimately develop during the poling process, leading to the suggestion that the change in slope was due to increases in combined ferroelectric and ferroelastic texture. Lastly, it was found that electric field induced increases in ferroelectric texture by poling at 25 °C occurs while ferroelastic domain wall motion is largely suppressed. This change in ferroelectric texture severely hinders the rate at which subsequent ferroelastic domain wall motion can be induced during poling at elevated temperatures below TC, suggesting that hard PZT samples should be preheated to the poling temperature before poling begins.

Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

NASA Astrophysics Data System (ADS)

Burnett, T. L.; Weaver, P. M.; Blackburn, J. F.; Stewart, M.; Cain, M. G.

2010-08-01

The functional properties of ferroelectric ceramic bulk or thin film materials are strongly influenced by their nanostructure, crystallographic orientation, and structural geometry. In this paper, we show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The combined technique is used to obtain data on the domain-resolved effective single crystal piezoelectric response of individual crystallites in Pb(Zr0.4Ti0.6)O3 ceramics. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

DOE PAGES

Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.; ...

2015-06-11

The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These featuresmore » are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.« less

Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

NASA Astrophysics Data System (ADS)

Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

2016-12-01

With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

Defect-driven flexochemical coupling in thin ferroelectric films

NASA Astrophysics Data System (ADS)

Eliseev, Eugene A.; Vorotiahin, Ivan S.; Fomichov, Yevhen M.; Glinchuk, Maya D.; Kalinin, Sergei V.; Genenko, Yuri A.; Morozovska, Anna N.

2018-01-01

Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical coupling on the size effects in polar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultrathin layer of ambient screening charges, characterized by a surface screening length. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexochemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTi O3 films containing a layer of elastic defects. A nontrivial result is the persistence of ferroelectricity at film thicknesses below 4 nm, temperatures lower than 350 K, and relatively high surface screening length (˜0.1 nm ) . The origin of this phenomenon is the flexoelectric coupling leading to the rebuilding of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm. The ferroelectricity persistence is facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

Can ferroelectric polarization explain the high performance of hybrid halide perovskite solar cells?

PubMed

Sherkar, Tejas S; Koster, L Jan Anton

2016-01-07

The power conversion efficiency of photovoltaic cells based on the use of hybrid halide perovskites, CH3NH3PbX3 (X = Cl, Br, I), now exceeds 20%. Recently, it was suggested that this high performance originates from the presence of ferroelectricity in the perovskite, which is hypothesized to lower charge recombination in the device. Here, we investigate and quantify the influence of mesoscale ferroelectric polarization on the device performance of perovskite solar cells. We implement a 3D drift diffusion model to describe the solar cell operation. To account for the mesoscale ferroelectricity, we incorporate domains defined by polarization strength, P, in 3D space, forming different polarization landscapes or microstructures. Study of microstructures with highly-ordered polarized domains shows that charge transport and recombination in the solar cell depends significantly on the polarization landscape viz. the orientation of domain boundaries and the size of domains. In the case of the microstructure with random correlated polarization, a realistic scenario, we find indication of the existence of channels for efficient charge transport in the device which leads to lowering of charge recombination, as evidenced by the high fill factor (FF). However, the high open-circuit voltage (VOC), which is typical of high performance perovskite solar cells, is unlikely to be explained by the presence of ferroelectric polarization in the perovskite.

Charge collection kinetics on ferroelectric polymer surface using charge gradient microscopy

DOE PAGES

Choi, Yoon-Young; Tong, Sheng; Ducharme, Stephen P.; ...

2016-05-03

Here, a charge gradient microscopy (CGM) probe was used to collect surface screening charges on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] thin films. These charges are naturally formed on unscreened ferroelectric domains in ambient condition. The CGM data were used to map the local electric current originating from the collected surface charges on the poled ferroelectric domains in the P(VDF-TrFE) thin films. Both the direction and amount of the collected current were controlled by changing the polarity and area of the poled domains. The endurance of charge collection by rubbing the CGM tip on the polymer film was limited to 20 scan cycles,more » after which the current reduced to almost zero. This degradation was attributed to the increase of the chemical bonding strength between the external screening charges and the polarization charges. Once this degradation mechanism is mitigated, the CGM technique can be applied to efficient energy harvesting devices using polymer ferroelectrics.« less

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE PAGES

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta; ...

2017-07-07

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Structural and dielectric characteristics of Ba3Ln3Ti5Nb5O30 (Ln = La, Nd, Sm) filled tungsten bronze ceramics

NASA Astrophysics Data System (ADS)

Chen, Wang; Gao, Ting Ting; Zhu, Xiao Li; Chen, Xiang Ming

2018-03-01

In the present work, the structural, dielectric and relaxor ferroelectric properties were investigated for Ba3Ln3Ti5Nb5O30 (Ln = La, Nd, Sm) ceramics. The filled tungsten bronze phase with space group P4/mbm was confirmed for all compositions, while a small amount of secondary phase was detected in Ba3Nd3Ti5Nb5O30 and Ba3Sm3Ti5Nb5O30. The typical relaxor ferroelectric behaviors were observed: a broad peak of dielectric constant shifting to higher temperatures and decreasing its magnitude with increasing frequency and the frequency dispersion obeying the Vogel-Fulcher relationship. The P-E (polarization-electric field) hysteresis loops were obtained for Ba3Ln3Ti5Nb5O30 (Ln = La, Nd, Sm) ceramics at low temperatures. The nanoscale ferroelectric 180° domains with strip-like shape were observed in the paraelectric matrix at room temperature, where the commensurate structural modulations were determined in the domains and incommensurate ones were determined in the matrix. The significant differences were determined between the present ceramics and Ba4Ln2Ti4Nb6O30 and Ba5LnTi3Nb7O30 because of the different distribution patterns of A1 and A2 cations.

Ultra-High-Density Ferroelectric Memories

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1995-01-01

Features include fast input and output via optical fibers. Memory devices of proposed type include thin ferroelectric films in which data stored in form of electric polarization. Assuming one datum stored in region as small as polarization domain, sizes of such domains impose upper limits on achievable storage densities. Limits approach 1 terabit/cm(Sup2) in all-optical versions of these ferroelectric memories and exceeds 1 gigabit/cm(Sup2) in optoelectronic versions. Memories expected to exhibit operational lives of about 10 years, input/output times of about 10 ns, and fatigue lives of about 10(Sup13) cycles.

Manipulating Ferroelectrics through Changes in Surface and Interface Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balke, Nina; Ramesh, Ramamoorthy; Yu, Pu

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments aremore » often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O 3 thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. Lastly, this study forms an important step toward integrating ferroelectric materials in electronic devices.« less

Manipulating Ferroelectrics through Changes in Surface and Interface Properties

DOE PAGES

Balke, Nina; Ramesh, Ramamoorthy; Yu, Pu

2017-10-23

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments aremore » often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O 3 thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. Lastly, this study forms an important step toward integrating ferroelectric materials in electronic devices.« less

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

NASA Astrophysics Data System (ADS)

Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

2018-02-01

Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

NASA Astrophysics Data System (ADS)

Fengler, F. P. G.; Hoffmann, M.; Slesazeck, S.; Mikolajick, T.; Schroeder, U.

2018-05-01

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.

Role of flexoelectric coupling in polarization rotations at the a-c domain walls in ferroelectric perovskites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ye; Chen, Long-Qing; Kalinin, Sergei V.

Ferroelectric and ferroelastic domain walls play important roles in ferroelectric properties. However, their couplings with flexoelectricity have been less understood. Here, we applied phase-field simulation to investigate the flexoelectric coupling with ferroelectric a/c twin structures in lead ziconate titanate thin films. Local stress gradients were found to exist near twin walls that created both lateral and vertical electric fields through the flexoelectric effect, resulting in polarization inclinations from either horizontal or normal orientation, polarization rotation angles deviated from 90°, and consequently highly asymmetric a/c twin walls. Furthermore, by tuning the flexoelectric strengths in a reasonable range from first-principles calculations, wemore » found that the transverse flexoelectric coefficient has a larger influence on the polarization rotation than longitudinal and shear coefficients. And as polar rotations that commonly occur at compositional morphotropic phase boundaries contribute to the piezoelectric enhancement, this work calls for further exploration of alternative strain-engineered polar rotations via flexoelectricity in ferroelectric thin films.« less

Role of flexoelectric coupling in polarization rotations at the a-c domain walls in ferroelectric perovskites

DOE PAGES

Cao, Ye; Chen, Long-Qing; Kalinin, Sergei V.

2017-05-16

Ferroelectric and ferroelastic domain walls play important roles in ferroelectric properties. However, their couplings with flexoelectricity have been less understood. Here, we applied phase-field simulation to investigate the flexoelectric coupling with ferroelectric a/c twin structures in lead ziconate titanate thin films. Local stress gradients were found to exist near twin walls that created both lateral and vertical electric fields through the flexoelectric effect, resulting in polarization inclinations from either horizontal or normal orientation, polarization rotation angles deviated from 90°, and consequently highly asymmetric a/c twin walls. Furthermore, by tuning the flexoelectric strengths in a reasonable range from first-principles calculations, wemore » found that the transverse flexoelectric coefficient has a larger influence on the polarization rotation than longitudinal and shear coefficients. And as polar rotations that commonly occur at compositional morphotropic phase boundaries contribute to the piezoelectric enhancement, this work calls for further exploration of alternative strain-engineered polar rotations via flexoelectricity in ferroelectric thin films.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Fei; Zhang, Shujun; Yang, Tiannan

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric propertiesmore » is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.« less

Strained enabled Ferroelectricity in CaTiO3 Thin Films Probed by Nonlinear Optics and Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia; Kumar, Amit; Denev, Sava; Brooks, Charles; Schlom, Darrell; Eklund, Carl-Johan; Rabe, Karin M.; Fennie, Craig J.; Gopalan, Venkatraman

2009-03-01

Calcium titanate, CaTiO3 is not a ferroelectric in its bulk form. However, first principles calculations predict that biaxially tensile strained CaTiO3 thin films should become ferroelectric. Here, we indeed confirm that strained CaTiO3 films become ferroelectric with a Curie temperature of ˜125K. Optical second harmonic generation (SHG) measurements, polarization studies, and in-situ electric-field measurements for a number of films with different strain values will be presented: CaTiO3/DyScO3(110), CaTiO3/SrTiO3 (100),CaTiO3/GdScO3/NdGaO3(110), CaTiO3/LaSrAlO3(001) as well as for a single crystal CaTiO3. From these studies, we conclude that strained CaTiO3 films are ferroelectric with a point group symmetry of mm2, and show reversible domain switching characteristics under an electric field. We also present results of variable temperature piezoelectric force microscopy for imaging the polar domains in the ferroelectric phase. These results suggest that strain is a valuable tool for inducing polar, long range ferroelectric order in even non-polar ceramic materials such as CaTiO3.

Optimization of Ferroelectric Ceramics by Design at the Microstructure Level

NASA Astrophysics Data System (ADS)

Jayachandran, K. P.; Guedes, J. M.; Rodrigues, H. C.

2010-05-01

Ferroelectric materials show remarkable physical behaviors that make them essential for many devices and have been extensively studied for their applications of nonvolatile random access memory (NvRAM) and high-speed random access memories. Although ferroelectric ceramics (polycrystals) present ease in manufacture and in compositional modifications and represent the widest application area of materials, computational and theoretical studies are sparse owing to many reasons including the large number of constituent atoms. Macroscopic properties of ferroelectric polycrystals are dominated by the inhomogeneities at the crystallographic domain/grain level. Orientation of grains/domains is critical to the electromechanical response of the single crystalline and polycrystalline materials. Polycrystalline materials have the potential of exhibiting better performance at a macroscopic scale by design of the domain/grain configuration at the domain-size scale. This suggests that piezoelectric properties can be optimized by a proper choice of the parameters which control the distribution of grain orientations. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Hence we have implemented the stochastic optimization technique of simulated annealing combined with the homogenization for the optimization problem. The mathematical homogenization theory of a piezoelectric medium is implemented in the finite element method (FEM) by solving the coupled equilibrium electrical and mechanical fields. This implementation enables the study of the dependence of the macroscopic electromechanical properties of a typical crystalline and polycrystalline ferroelectric ceramic on the grain orientation.

Direct observation of the ferroelectric polarization in the layered perovskite Bi{sub 4}Ti{sub 3}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urushihara, Daisuke; Asaka, Toru, E-mail: asaka.toru@nitech.ac.jp; Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555

We investigated the crystal structure and ferroelectric domains of Bi{sub 4}Ti{sub 3}O{sub 12} (BTO) by means of transmission electron microscopy (TEM) and single-crystal X-ray diffractometry. From the extinction rule, we determined that the space group in the ferroelectric phase of BTO is P1a1 rather than B2cb and B1a1 which have been proposed previously. We successfully refined the crystal structure based on the space group P1a1. The 180° and 90° ferroelectric domain structures were observed by the [001]-zone dark-field TEM imaging. In the 180° domain structure, we determined that one component of the polarization vector is parallel to the a-axis. Anmore » annular bright-field scanning transmission electron microscopy (ABF-STEM) was performed for the direct observation of the crystal structures. The ABF-STEM images displayed the contrasts with respect to every atomic position in spite of the highly distorted structure of BTO. We could evaluate the tilting and distortion of the [TiO{sub 6}] octahedra relatively. Therefore, we directly observed the ferroelectric displacements of Bi and Ti ions.« less

Optical second harmonic images of 90 deg domain structure in BaTiO3 and periodically inverted antiparallel domains in LiTaO3

NASA Astrophysics Data System (ADS)

Uesu, Y.; Kurimura, S.; Yamamoto, Y.

1995-04-01

Applied is a microscope to observations of 90 deg ferroelectric domain structure in BaTiO3 and inverted periodically are ferroelectric domains in LiTaO3. It is founded that the second harmonic generation microscope gives information which cannot be obtained by ordinary optical microscopes. The developed nonlinear optical microscope builds two dimensional second harmonic image of a specimen with inhomogenous distribution of d(sub ijk) and applied the microscope to observations of inhomogeneity in some nonlinear-optical organic microcrystals.

Magnetoelectric control of spin-chiral ferroelectric domains in a triangular lattice antiferromagnet

NASA Astrophysics Data System (ADS)

Kimura, Kenta; Nakamura, Hiroyuki; Ohgushi, Kenya; Kimura, Tsuyoshi

2008-10-01

We have grown single crystals of a triangular lattice antiferromagnet (TLA), CuCrO2 , and investigated the correlation between magnetic and dielectric properties. Two magnetic phase transitions are observed at TN2≈24.2K and TN1≈23.6K . It was found that ferroelectric polarization along the triangular lattice plane develops at TN1 , suggesting that the system undergoes a transition into an out-of-plane 120° spin-chiral phase at TN1 . The TLA provides an opportunity for unique magnetoelectric control of spin-chiral ferroelectric domain structures by means of electric and/or magnetic fields.

Electron backscatter diffraction as a domain analysis technique in BiFeO(3)-PbTiO(3) single crystals.

PubMed

Burnett, T L; Comyn, T P; Merson, E; Bell, A J; Mingard, K; Hegarty, T; Cain, M

2008-05-01

xBiFeO(3)-(1-x)PbTiO(3) single crystals were grown via a flux method for a range of compositions. Presented here is a study of the domain configuration in the 0.5BiFeO(3)-0.5PbTiO(3) composition using electron backscatter diffraction to demonstrate the ability of the technique to map ferroelastic domain structures at the micron and submicron scale. The micron-scale domains exhibit an angle of approximately 85 degrees between each variant, indicative of a ferroelastic domain wall in a tetragonal system with a spontaneous strain, c/a - 1 of 0.10, in excellent agreement with the lattice parameters derived from x-ray diffraction. Contrast seen in forescatter images is attributed to variations in the direction of the electrical polarization vector, providing images of ferroelectric domain patterns.

Electronic ferroelectricity in carbon-based systems: from reality of organic conductors to promises of polymers and graphene nano-ribbons

NASA Astrophysics Data System (ADS)

Kirova, Natasha; Brazovskii, Serguei

2014-03-01

Ferroelectricity is a rising demand in fundamental and applied solid state physics. Ferroelectrics are used in microelectronics as active gate materials, in capacitors, electro-optical-acoustic modulators, etc. There is a particular demand for plastic ferroelectrics, e.g. as a sensor for acoustic imaging in medicine and beyond, in shapeable capacitors, etc. Microscopic mechanisms of ferroelectric polarization in traditional materials are typically ionic. In this talk we discuss the electronic ferroelectrics - carbon-based materials: organic crystals, conducting polymers and graphene nano-ribbons. The motion of walls, separating domains with opposite electric polarisation, can be influenced and manipulated by terahertz and infra-red range optics.

Ferroelectricity in CaTiO3 Single Crystal Surfaces and Thin Films and Probed by Nonlinear Optics and Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia; Lummen, Tom; Haislmaier, Ryan; Denev, Sava; Brooks, Charles; Biegalski, Michael; Schlom, Darrell; Eklund, Carl-Johan; Rabe, Karin; Fennie, Craig; Gopalan, Venkatraman

2011-03-01

Bulk CaTi O3 has a centrosymmetric point group and is not polar or ferroelectric. However, we present surprising results that show highly regular polar domains in single crystals of CaTi O3 . Confocal Second Harmonic Generation (SHG) and Raman imaging studies were carried out on perovskite CaTi O3 crystal surfaces. They reveal large, crystallographic polar domains at room temperature, with in-plane polarization components delineated by twin walls. SHG analysis indicates that the highest symmetry of the polar surface is m (space group P c) with polarization in the m plane. In addition, we present results of the polar domain structure imaged before and after the application of an external electric field. Finally, we present the SHG studies of CaTi O3 thin films grown using reactive Molecular Beam Epitaxy (MBE); these films are predicted by theory to be ferroelectric and are shown experimentally, both with SHG and in-plane dielectric measurements, to be ferroelectric for temperatures less than ~ 150 K with group symmetry mm2.

On the persistence of polar domains in ultrathin ferroelectric capacitors.

PubMed

Zubko, Pavlo; Lu, Haidong; Bark, Chung-Wung; Martí, Xavi; Santiso, José; Eom, Chang-Beom; Catalan, Gustau; Gruverman, Alexei

2017-07-19

The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO 3 films sandwiched between the most habitual perovskite electrodes, SrRuO 3 , on top of the most used perovskite substrate, SrTiO 3 . We use a combination of piezoresponse force microscopy, dielectric measurements and structural characterization to provide conclusive evidence for the ferroelectric nature of the relaxed polarization state in ultrathin BaTiO 3 capacitors. We show that even the high screening efficiency of SrRuO 3 electrodes is still insufficient to stabilize polarization in SrRuO 3 /BaTiO 3 /SrRuO 3 heterostructures at room temperature. We identify the key role of domain wall motion in determining the macroscopic electrical properties of ultrathin capacitors and discuss their dielectric response in the light of the recent interest in negative capacitance behaviour.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Fei; Zhang, Shujun; Yang, Tiannan

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric propertiesmore » is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.« less

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

DOE PAGES

Li, Fei; Zhang, Shujun; Yang, Tiannan; ...

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric propertiesmore » is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.« less

Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

DOEpatents

Kalinin, Sergei V.; Baddorf, Arthur P.; Lee, Ho Nyung; Shin, Junsoo; Gruverman, Alexei L.; Karapetian, Edgar; Kachanov, Mark

2007-11-06

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Light-Activated Gigahertz Ferroelectric Domain Dynamics

NASA Astrophysics Data System (ADS)

Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

2018-03-01

Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

NASA Astrophysics Data System (ADS)

Lee, Sang-Woo; Joo, Suk-Ho; Cho, Sung Lae; Son, Yoon-Ho; Lee, Kyu-Mann; Nam, Sang-Don; Park, Kun-Sang; Lee, Yong-Tak; Seo, Jung-Suk; Kim, Young-Dae; An, Hyeong-Geun; Kim, Hyoung-Joon; Jung, Yong-Ju; Heo, Jang-Eun; Lee, Moon-Sook; Park, Soon-Oh; Chung, U-In; Moon, Joo-Tae

2002-11-01

In the manufacturing of a 32M ferroelectric random access memory (FRAM) device on the basis of 0.25 design rule (D/R), one of the most difficult processes is to pattern a submicron capacitor module while retaining good ferroelectric properties. In this paper, we report the ferroelectric property of patterned submicron capacitor modules with a stack height of 380 nm, where the 100 nm-thick Pb(Zr, Ti)O3 (PZT) films were prepared by the sol-gel method. After patterning, overall sidewall slope was approximately 70° and cell-to-cell node separation was made to be 80 nm to prevent possible twin-bit failure in the device. Finally, several heat treatment conditions were investigated to retain the ferroelectric property of the patterned capacitor. It was found that rapid thermal processing (RTP) treatment yields better properties than conventional furnace annealing. This result is directly related to the near-surface chemistry of the PZT films, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The resultant switching polarization value of the submicron capacitor was approximately 30 μC/cm2 measured at 3 V.

Interrelation between domain structures and polarization switching in hybrid improper ferroelectric Ca3(Mn,Ti)2O7

NASA Astrophysics Data System (ADS)

Gao, Bin; Huang, Fei-Ting; Wang, Yazhong; Kim, Jae-Wook; Wang, Lihai; Lim, Seong-Joon; Cheong, Sang-Wook

2017-05-01

Ca3Mn2O7 and Ca3Ti2O7 have been proposed as the prototypical hybrid improper ferroelectrics (HIFs), and a significant magnetoelectric (ME) coupling in magnetic Ca3Mn2O7 is, in fact, reported theoretically and experimentally. Although the switchability of polarization is confirmed in Ca3Ti2O7 and other non-magnetic HIFs, there is no report of switchable polarization in the isostructural Ca3Mn2O7. We constructed the phase diagram of Ca3Mn2-xTixO7 through our systematic study of a series of single crystalline Ca3Mn2-xTixO7 (x = 0, 0.1, 1, 1.5, and 2). Using transmission electron microscopy, we have unveiled the unique domain structure of Ca3Mn2O7: the high-density 90° stacking of a- and b-domains along the c-axis due to the phase transition through an intermediate Acca phase and the in-plane irregular wavy ferroelastic twin domains. The interrelation between domain structures and physical properties is unprecedented: the stacking along the c-axis prevents the switching of polarization and causes the irregular in-plane ferroelastic domain pattern. In addition, we have determined the magnetic phase diagram and found complex magnetism of Ca3Mn2O7 with isotropic canted moments. These results lead to negligible observable ME coupling in Ca3Mn2O7 and guide us to explore multiferroics with large ME coupling.

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

PubMed

Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

2017-12-13

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

Local probing of ferroelectric and ferroelastic switching through stress-mediated piezoelectric spectroscopy

DOE PAGES

Edwards, David; Bastani, Yaser; Cao, Ye; ...

2016-01-19

The role of local strains is fundamental to the large effective piezoelectric and ferroelectric response of thin films. Therefore a method to investigate local strain-induced phenomena is imperative. Here, pressure induced domain reorganization is reported in lead zirconate titanate films with composition near the morphotropic phase boundary. An approach is thus demonstrated to simultaneously study the role of applied mechanical pressure on multiple local properties of the film. In particular, the modification of hysteresis loops collected at different tip pressures is consistent with first mostly ferroelastic and then ferroelectric dominated reorientation of domains under increasing applied pressure. The pressure inducedmore » domain writing is also investigated through phase field simulations where the applied pressure is generally found to increase the in-plane polarization of the domains with respect to the out-of-plane component, corroborating the experimental observations. The approach developed here has the potential to explore other hysteretic phenomena and phase transitions in a spatially resolved manner with varying local pressure.« less

Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering.

PubMed

Pan, Hao; Ma, Jing; Ma, Ji; Zhang, Qinghua; Liu, Xiaozhi; Guan, Bo; Gu, Lin; Zhang, Xin; Zhang, Yu-Jun; Li, Liangliang; Shen, Yang; Lin, Yuan-Hua; Nan, Ce-Wen

2018-05-08

Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm -3 , together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.

Microwave a.c. conductivity of domain walls in ferroelectric thin films

DOE PAGES

Tselev, Alexander; Yu, Pu; Cao, Ye; ...

2016-05-31

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphologicalmore » roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.« less

Microwave a.c. conductivity of domain walls in ferroelectric thin films

PubMed Central

Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

2016-01-01

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

PubMed

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

p - n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure consideredmore » here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.« less

Elastic Domain Wall Waves in Ferroelectric Ceramics and Single Crystals

DTIC Science & Technology

1988-07-01

properties of piezoelectric and electrostrictive types of ferroelectric ceramics and single crystals. This was for the purpose of shedding light on the...effectiveness and general characteristics of fabrication techniques, as well as exploring basic physical mechanisms playing a role in the technology of...routing and processing devices on small ferroelectric wafers, fabricated by simple inexpensive poling and biasing techniques. Such devices ma) be

Stress effects in ferroelectric perovskite thin-films

NASA Astrophysics Data System (ADS)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution synchrotron x-ray diffraction indicates that a small effective restoring stress of about 1 MPa acts on the domain walls in these nano-crystalline PZT films. This insight allows reversible control of the ferroelectric and dielectric behavior of these important functional oxide materials, with important implications for associated integrated devices.

Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Zijian Hong

Ferroelectrics are materials that exhibit spontaneous electric polarization which can be switched between energy-degenerated states by external stimuli (e.g., mechanical force and electric field) that exceeds a critical value. They have wide potential applications in memories, capacitors, piezoelectric and pyroelectric sensors, and nanomechanical systems. Topological structures and topological phase transitions have been introduced to the condensed matter physics in the past few decades and have attracted broad attentions in various disciplines due to the rich physical insights and broad potential applications. Ferromagnetic topological structures such as vortex and skyrmion are known to be stabilized by the antisymmetric chiral interaction (e.g., Dzyaloshinskii-Moriya interaction). Without such interaction, ferroelectric topological structures (i.e., vortex, flux-closure, skyrmions, and merons) have been studied only recently with other designing strategies, such as reducing the dimension of the ferroelectrics. The overarching goal of this dissertation is to investigate the topological structures in ferroelectric oxide perovskites as well as the topological phase transitions under external applied forces. Pb(Zr,Ti)O3 (PZT) with morphotropic phase boundary is widely explored for high piezoelectric and dielectric properties. The domain structure of PZT tetragonal/rhombohedral (T/R) bilayer is investigated. Strong interfacial coupling is shown, with large polarization rotation to a lower symmetry phase near the T/R interface. Interlayer domain growth can also be captured, with T-domains in the R layer and R-domains in the T layer. For thin PZT bilayer with 5nm of T-layer and 20 nm of R-layer, the a1/a 2 twin domain structure is formed in the top T layer, which could be fully switched to R domains under applied bias. While a unique flux-closure pattern is observed both theoretically and experimentally in the thick bilayer film with 50 nm of thickness for both T and R layers. It is revealed that the bilayer system could facilitate the motion of the ferroelastic adomain in the top T-layer since the a-domain is not directly embedded in the substrate with high density of defects which can pin the domain wall. Excellent dielectric and piezoelectric responses are demonstrated due to the large polarization rotation and the highly mobile domain walls in both the thick and thin bilayer systems. density of defects which can pin the domain wall. Excellent dielectric and piezoelectric responses are demonstrated due to the large polarization rotation and the highly mobile domain walls in both the thick and thin bilayer systems. The long-range ordered polar vortex array is observed in the (PbTiO 3)n/(SrTiO3)n (PTOn/STOn with n=10˜20) superlattices with combined experimental and theoretical studies. Phase-field simulations reveal the three-dimensional textures of the polar vortex arrays. The neighboring vortices rotate in the opposite directions, which extended into tube-like vortex lines perpendicular to the vortex plane. The thickness-dependent phase diagram is predicted and verified by experimental observations. The energetics (the contributions from elastic, electrostatic, gradient and Landau chemical energies) accompanying the phase transitions are analyzed in details. The dominating depolarization energy at short periodicity (n<10) favors a1/ a2 twin domain, while the large elastic relaxation and Landau energy reduction at large periodicity (n>20) leads to the formation of flux-closure domain with both 90° a/c domain walls and 180° c+/c - domain walls, counterbalancing of the individual energies at intermediate periodicities (n=10˜20) gives rise to the formation of exotic vortex structure with continuous polarization rotation surrounding a singularity-like vortex core. Analytical calculations are performed, showing that the stability of the polar vortex structure is directly related to the length of Pi times bulk domain wall width, where vortex structure can be expected when the geometric length scale of the ferroelectrics is close to this value. The role of insulating STO is further revealed, which shows that a rich phase diagram can be formed by simply tuning the thickness of this layer. Wave-like polar spiral phase is simulated by substituting part of the PTO with BiFeO3 (BFO) in the PTO/STO superlattice (i.e., in a (PTO) 4/(BFO)4/(PTO)4/(STO)12 tricolor system) which has demonstrate ordered polar vortex lattice. This spiral phase is made up of semi-vortex cores that are floating up-down in the ferroelectric PTO layers, giving rise to a net in-plane polarization. An increase of Curie temperature and topological to regular domain transition temperature (over 200 K) is observed, due to the higher Curie temperature and larger spontaneous polarization in BFO layers. This unidirectional spiral state can be reversibly switched by experimentally feasible in-plane field, which evolves into a metastable vortex structure in-between two spiral phases with opposite in-plane directions. (Abstract shortened by ProQuest.).

Domain wall nanoelectronics

NASA Astrophysics Data System (ADS)

Catalan, G.; Seidel, J.; Ramesh, R.; Scott, J. F.

2012-01-01

Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines’ and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy

DOE PAGES

Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; ...

2016-09-16

We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yieldmore » can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.« less

Laser-induced ferroelectric domain engineering in LiNbO3 crystals using an amorphous silicon overlayer

NASA Astrophysics Data System (ADS)

Zisis, G.; Martinez-Jimenez, G.; Franz, Y.; Healy, N.; Masaud, T. M.; Chong, H. M. H.; Soergel, E.; Peacock, A. C.; Mailis, S.

2017-08-01

We report laser-induced poling inhibition and direct poling in lithium niobate crystals (LiNbO3), covered with an amorphous silicon (a-Si) light-absorbing layer, using a visible (488 nm) continuous wave laser source. Our results show that the use of the a-Si overlayer produces deeper poling inhibited domains with minimum surface damage, as compared to previously reported UV laser writing experiments on uncoated crystals, thus increasing the applicability of this method in the production of ferroelectric domain engineered structures for nonlinear optical applications. The characteristics of the poling inhibited domains were investigated using differential etching and piezoresponse force microscopy.

Exploring Anomalous Polarization Dynamics in Organometallic Halide Perovskites

DOE PAGES

Ahmadi, Mahshid; Collins, Liam; Puretzky, Alexander; ...

2018-01-22

Organometallic halide perovskites (OMHPs) have attracted broad attention as prospective materials for optoelectronic applications. Among the many anomalous properties of these materials, of special interest are the ferroelectric properties including both classical and relaxor-like components, as a potential origin of slow dynamics, field enhancement, and anomalous mobilities. Here, ferroelectric properties of the three representative OMHPs are explored, including FAPb xSn 1–xI 3 (x = 0, x = 0.85) and FA 0.85MA 0.15PbI 3 using band excitation piezoresponse force microscopy and contact mode Kelvin probe force microscopy, providing insight into long- and short-range dipole and charge dynamics in these materials andmore » probing ferroelectric density of states. Furthermore, second-harmonic generation in thin films of OMHPs is observed, providing a direct information on the noncentrosymmetric polarization in such materials. Overall, the data provide strong evidence for the presence of ferroelectric domains in these systems; however, the domain dynamics is suppressed by fast ion dynamics. These materials hence present the limit of ferroelectric materials with spontaneous polarization dynamically screened by ionic and electronic carriers.« less

Exploring Anomalous Polarization Dynamics in Organometallic Halide Perovskites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi, Mahshid; Collins, Liam; Puretzky, Alexander

Organometallic halide perovskites (OMHPs) have attracted broad attention as prospective materials for optoelectronic applications. Among the many anomalous properties of these materials, of special interest are the ferroelectric properties including both classical and relaxor-like components, as a potential origin of slow dynamics, field enhancement, and anomalous mobilities. Here, ferroelectric properties of the three representative OMHPs are explored, including FAPb xSn 1–xI 3 (x = 0, x = 0.85) and FA 0.85MA 0.15PbI 3 using band excitation piezoresponse force microscopy and contact mode Kelvin probe force microscopy, providing insight into long- and short-range dipole and charge dynamics in these materials andmore » probing ferroelectric density of states. Furthermore, second-harmonic generation in thin films of OMHPs is observed, providing a direct information on the noncentrosymmetric polarization in such materials. Overall, the data provide strong evidence for the presence of ferroelectric domains in these systems; however, the domain dynamics is suppressed by fast ion dynamics. These materials hence present the limit of ferroelectric materials with spontaneous polarization dynamically screened by ionic and electronic carriers.« less

Probing domain switching dynamics in ferroelectric thick films by small field e31,f piezoelectric measurement

NASA Astrophysics Data System (ADS)

Cheng, Hongbo; Ouyang, Jun; Kanno, Isaku

2017-07-01

Epitaxial Pb(Zr0.53Ti0.47)O3 films were grown on (001) Pt/(001) MgO via rf-magnetron sputtering. Switching dynamics of 90° and 180° domains under bi-polar electric fields were probed by using small-field e31 ,f measurements in which the evolution of the transverse piezoelectric response with the bias voltage represents a set of fingerprints of the evolving domain structure. Furthermore, the asymmetric e31 ,f-V curves revealed a strong built-in electric field, which was verified by the standard polarization-electric field hysteresis measurement. Finally, X-ray 2θ-scan patterns under DC bias voltages were collected for the piezoelectric specimen. The domain switching sequence indicated by the XRD results is consistent with that revealed by the e31 ,f measurement.

General Nonlinear Ferroelectric Model v. Beta

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Wen; Robbins, Josh

2017-03-14

The purpose of this software is to function as a generalized ferroelectric material model. The material model is designed to work with existing finite element packages by providing updated information on material properties that are nonlinear and dependent on loading history. The two major nonlinear phenomena this model captures are domain-switching and phase transformation. The software itself does not contain potentially sensitive material information and instead provides a framework for different physical phenomena observed within ferroelectric materials. The model is calibrated to a specific ferroelectric material through input parameters provided by the user.

Frequency dependent polarisation switching in h-ErMnO3

NASA Astrophysics Data System (ADS)

Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan

2018-04-01

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5-6 μC/cm2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.

Low temperature dielectric relaxation in ordinary perovskite ferroelectrics: enlightenment from high-energy x-ray diffraction

NASA Astrophysics Data System (ADS)

Ochoa, D. A.; Levit, R.; Fancher, C. M.; Esteves, G.; Jones, J. L.; E García, J.

2017-05-01

Ordinary ferroelectrics exhibit a second order phase transition that is characterized by a sharp peak in the dielectric permittivity at a frequency-independent temperature. Furthermore, these materials show a low temperature dielectric relaxation that appears to be a common behavior of perovskite systems. Tetragonal lead zirconate titanate is used here as a model system in order to explore the origin of such an anomaly, since there is no consensus about the physical phenomenon involved in it. Crystallographic and domain structure studies are performed from temperature dependent synchrotron x-ray diffraction measurement. Results indicate that the dielectric relaxation cannot be associated with crystallographic or domain configuration changes. The relaxation process is then parameterized by using the Vogel-Fulcher-Tammann phenomenological equation. Results allow us to hypothesize that the observed phenomenon is due to changes in the dynamic behavior of the ferroelectric domains related to the fluctuation of the local polarization.

Light-activated Gigahertz Ferroelectric Domain Dynamics

DOE PAGES

Akamatsu, Hirofumii; Yuan, Yakun; Stoica, Vladimir A.; ...

2018-02-26

Using time- and spatially-resolved hard X-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO 3 are simultaneously captured on sub-nanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photo-induced electric field of up to 20 million volts per meter is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling (DPFM) method is developed that reveals the microscopic origin of these dynamics, leading to GHz polarization andmore » elastic waves travelling in the crystal with sonic speeds and spatially varying frequencies. The advance of spatiotemporal imaging and dynamical modeling tools open opportunities of disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains« less

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.

A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O{sub 3}. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention wasmore » measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.« less

Slush-like polar structures in single-crystal relaxors

NASA Astrophysics Data System (ADS)

Takenaka, Hiroyuki; Grinberg, Ilya; Liu, Shi; Rappe, Andrew M.

2017-06-01

Despite more than 50 years of investigation, it is still unclear how the underlying structure of relaxor ferroelectrics gives rise to their defining properties, such as ultrahigh piezoelectric coefficients, high permittivity over a broad temperature range, diffuse phase transitions, strong frequency dependence in dielectric response, and phonon anomalies. The model of polar nanoregions inside a non-polar matrix has been widely used to describe the structure of relaxor ferroelectrics. However, the lack of precise knowledge about the shapes, growth and dipole patterns of polar nanoregions has led to the characterization of relaxors as “hopeless messes”, and no predictive model for relaxor behaviour is currently available. Here we use molecular dynamics simulations of the prototypical Pb(Mg1/3,Nb2/3)O3-PbTiO3 relaxor material to examine its structure and the spatial and temporal polarization correlations. Our simulations show that the unusual properties of relaxors stem from the presence of a multi-domain state with extremely small domain sizes (2-10 nanometres), and no non-polar matrix, owing to the local dynamics. We find that polar structures in the multi-domain state in relaxors are analogous to those of the slush state of water. The multi-domain structure of relaxors that is revealed by our molecular dynamics simulations is consistent with recent experimental diffuse scattering results and indicates that relaxors have a high density of low-angle domain walls. This insight explains the recently discovered classes of relaxors that cannot be described by the polar nanoregion model, and provides guidance for the design and synthesis of new relaxor materials.

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

DOE PAGES

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

2015-01-14

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

Nonequilibrium ferroelectric-ferroelastic 10 nm nanodomains: wrinkles, period-doubling, and power-law relaxation

NASA Astrophysics Data System (ADS)

Scott, James F.; Evans, Donald M.; Katiyar, Ram S.; McQuaid, Raymond G. P.; Gregg, J. Marty

2017-08-01

Since the 1935 work of Landau-Lifshitz and of Kittel in 1946 all ferromagnetic, ferroelectric, and ferroelastic domains have been thought to be straight-sided with domain widths proportional to the square root of the sample thickness. We show in the present work that this is not true. We also discover period doubling domains predicted by Metaxas et al (2008 Phys. Rev. Lett. 99 217208) and modeled by Wang and Zhao (2015 Sci. Rep. 5 8887). We examine non-equilibrium ferroic domain structures in perovskite oxides with respect to folding, wrinkling, and relaxation and suggest that structures are kinetically limited and in the viscous flow regime predicted by Metaxas et al in 2008 but never observed experimentally. Comparisons are made with liquid crystals and hydrodynamic instabilities, including chevrons, and fractional power-law relaxation. As Shin et al (2016 Soft Matter 12 3502) recently emphasized: ‘An understanding of how these folds initiate, propagate, and interact with each other is still lacking’. Inside each ferroelastic domain are ferroelectric 90° nano-domains with 10 nm widths and periodicity in agreement with the 10 nm theoretical minima predicted by Feigl et al (2014 Nat. Commun. 5 4677). Evidence is presented for domain-width period doubling, which is common in polymer films but unknown in ferroic domains. A discussion of the folding-to-period doubling phase transition model of Wang and Zhao is included.

Indentation induced mechanical and electrical response in ferroelectric crystal investigated by acoustic mode AFM

NASA Astrophysics Data System (ADS)

Yu, H. F.; Zeng, H. R.; Ma, X. D.; Chu, R. Q.; Li, G. R.; Luo, H. S.; Yin, Q. R.

2005-01-01

The mechanical and electrical response of Pb (Mg1/3Nb2/3)- O3-PbTiO3 single crystals to micro-indentation are investigated using the newly developed low frequency scanning probe acoustic microscopy which is based on the atomic force microscope. There are three ways to release the stress produced by indentation. Plastic deformation emerged directly underneath the indentor and along the indentation diagonals. In addition, indentation-induced micro-cracks and new non-180° domain structures which are perpendicular to each other are also observed in the indented surface. Based on the experimental results, the relationship between the cracks and the domain patterns was discussed.

Tunable thermal conductivity via domain structure engineering in ferroelectric thin films: A phase-field simulation

DOE PAGES

Wang, Jian -Jun; Wang, Yi; Ihlefeld, Jon F.; ...

2016-04-06

Effective thermal conductivity as a function of domain structure is studied by solving the heat conduction equation using a spectral iterative perturbation algorithm in materials with inhomogeneous thermal conductivity distribution. Using this proposed algorithm, the experimentally measured effective thermal conductivities of domain-engineered {001} p-BiFeO 3 thin films are quantitatively reproduced. In conjunction with two other testing examples, this proposed algorithm is proven to be an efficient tool for interpreting the relationship between the effective thermal conductivity and micro-/domain-structures. By combining this algorithm with the phase-field model of ferroelectric thin films, the effective thermal conductivity for PbZr 1-xTi xO 3 filmsmore » under different composition, thickness, strain, and working conditions is predicted. It is shown that the chemical composition, misfit strain, film thickness, film orientation, and a Piezoresponse Force Microscopy tip can be used to engineer the domain structures and tune the effective thermal conductivity. Furthermore, we expect our findings will stimulate future theoretical, experimental and engineering efforts on developing devices based on the tunable effective thermal conductivity in ferroelectric nanostructures.« less

Tunable thermal conductivity via domain structure engineering in ferroelectric thin films: A phase-field simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jian -Jun; Wang, Yi; Ihlefeld, Jon F.

Effective thermal conductivity as a function of domain structure is studied by solving the heat conduction equation using a spectral iterative perturbation algorithm in materials with inhomogeneous thermal conductivity distribution. Using this proposed algorithm, the experimentally measured effective thermal conductivities of domain-engineered {001} p-BiFeO 3 thin films are quantitatively reproduced. In conjunction with two other testing examples, this proposed algorithm is proven to be an efficient tool for interpreting the relationship between the effective thermal conductivity and micro-/domain-structures. By combining this algorithm with the phase-field model of ferroelectric thin films, the effective thermal conductivity for PbZr 1-xTi xO 3 filmsmore » under different composition, thickness, strain, and working conditions is predicted. It is shown that the chemical composition, misfit strain, film thickness, film orientation, and a Piezoresponse Force Microscopy tip can be used to engineer the domain structures and tune the effective thermal conductivity. Furthermore, we expect our findings will stimulate future theoretical, experimental and engineering efforts on developing devices based on the tunable effective thermal conductivity in ferroelectric nanostructures.« less

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO3 on SrTiO3.

PubMed

Gao, Tieren; Zhang, Xiaohang; Ratcliff, William; Maruyama, Shingo; Murakami, Makoto; Varatharajan, Anbusathaiah; Yamani, Zahra; Chen, Peijie; Wang, Ke; Zhang, Huairuo; Shull, Robert; Bendersky, Leonid A; Unguris, John; Ramesh, Ramamoorthy; Takeuchi, Ichiro

2017-05-10

Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO 3 films grown on DyScO 3 , a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO 3 . Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO 3 (BFO) (001) thin film heterostructures fabricated on (001) SrTiO 3 (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO 3 (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (H C ) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Mueller, Carl H.; VanKeuls, Fred W.; Subramanyam, Guru; Vignesparamoorthy, Sivaruban

2003-01-01

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Influence of miscut Y2O3-stabilized ZrO2 substrates on the azimuthal domain structure and ferroelectric properties of epitaxial La-substituted Bi4Ti3O12 films

NASA Astrophysics Data System (ADS)

Lee, Sung Kyun; Hesse, Dietrich; Gösele, Ulrich; Lee, Ho Nyung

2006-09-01

We have investigated the influence of both miscut angle and miscut direction of Y2O3-stabilized ZrO2 (YSZ) (100) single crystal substrates on the azimuthal domain structure of SrRuO3 electrode layers as well as of La-substituted Bi4Ti3O12 (BLT) ferroelectric thin films, both grown on these substrates by pulsed laser deposition. X-ray diffraction ϕ scan and pole figure characterizations revealed that the YSZ[011] miscut direction is more effective to uniformly reduce the number of azimuthal domain variants in the films than the YSZ[001] miscut direction. The BLT films on YSZ(100) substrates with miscut angle of 5° and [011] miscut direction involve only half the number of azimuthal domains, compared to the BLT films on exactly cut YSZ(100) substrates. Atomic force microscopy and plan-view transmission electron microscopy also confirmed that almost all BLT grains on these miscut YSZ(100) substrates are arranged along only two (out of four) specific azimuthal directions. The BLT films on YSZ(100) substrates with 5° miscut towards YSZ[011] showed an about 1.3 times higher remanent polarization (Pr=12.5μC /cm2) than the BLT films on exactly cut YSZ(100) substrates (Pr=9.5μC/cm2), due most probably to a lower areal density of azimuthal domain boundaries. It thus appears that reducing the structural domains can be an effective way to further enhance the ferroelectric properties of multiply twinned, epitaxial ferroelectric films.

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics.

PubMed

Li, Linze; Zhang, Yi; Xie, Lin; Jokisaari, Jacob R; Beekman, Christianne; Yang, Jan-Chi; Chu, Ying-Hao; Christen, Hans M; Pan, Xiaoqing

2017-06-14

The ability to switch the ferroelectric polarization using an electric field makes ferroelectrics attractive for application in nanodevices such as high-density memories. One of the major challenges impeding this application, however, has been known as "retention failure", which is a spontaneous process of polarization back-switching that can lead to data loss. This process is generally thought to be caused by the domain instability arising from interface boundary conditions and countered by defects, which can pin the domain wall and impede the back-switching. Here, using in situ transmission electron microscopy and atomic-scale scanning transmission electron microscopy, we show that the polarization retention failure can be induced by commonly observed nanoscale impurity defects in BiFeO 3 thin films. The interaction between polarization and the defects can also lead to the stabilization of novel functional nanodomains with mixed-phase structures and head-to-head polarization configurations. Thus, defect engineering provides a new route for tuning properties of ferroelectric nanosystems.

Phase-field modeling of chemical control of polarization stability and switching dynamics in ferroelectric thin films

DOE PAGES

Cao, Ye; Kalinin, Sergei V.

2016-12-15

Phase-field simulation (PFS) has revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on the solution of (a set of) Landau-Ginzburg-Devonshire equations for a defined order parameter field(s) under physical boundary conditions (BCs) of fixed potential or charge. While well matched to the interfaces in bulk materials and devices, these BCs are generally not applicable to free ferroelectric surfaces. Here, we developed a self-consistent phase-field model with BCs based on electrochemical equilibria. We chose Pb(Zr 0.2Ti 0.8)O 3 ultrathin film consisting of (001) oriented single tetragonal domain ( Pz) asmore » a model system and systematically studied the effects of oxygen partial pressure, temperature, and surface ions on the ferroelectric state and compared it with the case of complete screening. We have further explored the polarization switching induced by the oxygen partial pressure and observed pronounced size effect induced by chemical screening. Finally, our paper thus helps to understand the emergent phenomena in ferroelectric thin films brought about by the electrochemical ionic surface compensations.« less

Phase-field modeling of chemical control of polarization stability and switching dynamics in ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ye; Kalinin, Sergei V.

Phase-field simulation (PFS) has revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on the solution of (a set of) Landau-Ginzburg-Devonshire equations for a defined order parameter field(s) under physical boundary conditions (BCs) of fixed potential or charge. While well matched to the interfaces in bulk materials and devices, these BCs are generally not applicable to free ferroelectric surfaces. Here, we developed a self-consistent phase-field model with BCs based on electrochemical equilibria. We chose Pb(Zr 0.2Ti 0.8)O 3 ultrathin film consisting of (001) oriented single tetragonal domain ( Pz) asmore » a model system and systematically studied the effects of oxygen partial pressure, temperature, and surface ions on the ferroelectric state and compared it with the case of complete screening. We have further explored the polarization switching induced by the oxygen partial pressure and observed pronounced size effect induced by chemical screening. Finally, our paper thus helps to understand the emergent phenomena in ferroelectric thin films brought about by the electrochemical ionic surface compensations.« less

Ferroelectricity in high-density H 2O ice

DOE PAGES

Caracas, Razvan; Hemley, Russell J.

2015-04-01

The origin of longstanding anomalies in experimental studies of the dense solid phases of H 2O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. Here, the presence of local electric fields triggers the preferential parallel orientation of the watermore » molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.« less

Ferroelectric control of magnetization in BiFeO3/CoFe heterostructures.

NASA Astrophysics Data System (ADS)

Gajek, Martin; Martin, Lane; Heron, John; Seidel, Jan; Ramesh, Ramamoorthy

2009-03-01

The cross coupling between ferroic order parameters in multiferroics opens an alternative for the control of magnetism in magnetoelectric devices by purely electrical means. We first report on the exchange coupling between BiFeO3, an antiferromagnetic ferroelectric , and CoFe. We then show that the domain structure of the ferromagnet can be changed by poling the ferroelectric layer. Finally, we will discuss the implementation of our findings into possible device schemes.

Correlation between impurity distribution and location of ferroelectric domain walls in Nd : Mg : LiNbO 3 single crystal

NASA Astrophysics Data System (ADS)

Naumova, I. I.; Evlanova, N. F.; Blokhin, S. A.; Lavrishchev, S. V.

1998-04-01

Using selective chemical etching, scanning electron microscope (SEM) and wave dispersive X-ray (WDX) microanalysis we showed that the ferroelectric domain walls coincide with the maxima and minima Nd-impurity modulation in a periodically poled Nd : Mg : LiNbO 3 crystal grown by the Czochralski method along the normal to the (0 1 1¯ 2) face. Asymmetric form of the Nd-modulation produces nonequal positive and negative domains for one period. Variations of instantaneous rate of growth were estimated for facet and nonfacet crystal region in the framework of Burton-Prim-Slichter theory.

Electro-Active Device Using Radial Electric Field Piezo-Diaphragm for Control of Fluid Movement

NASA Technical Reports Server (NTRS)

Bryant, Robert G. (Inventor); Working, Dennis C. (Inventor)

2005-01-01

A fluid-control electro-active device includes a piezo-diaphragm made from a ferroelectric material sandwiched by first and second electrode patterns configured to introduce an electric field into the ferroelectric material when voltage is applied thereto. The electric field originates at a region of the ferroelectric material between the first and second electrode patterns, and extends radially outward from this region of the ferroelectric material and substantially parallel to the plane of the ferroelectric material. The piezo-diaphragm deflects symmetrically about this region in a direction substantially perpendicular to the electric field. An annular region coupled to and extending radially outward from the piezo-diaphragm perimetrically borders the piezo-diaphragm, A housing is connected to the region and at least one fluid flow path with piezo-diaphragm disposed therein.

Dependence of the Thermal Conductivity of BiFeO3 Thin Films on Polarization and Structure

NASA Astrophysics Data System (ADS)

Ning, Shuai; Huberman, Samuel C.; Zhang, Chen; Zhang, Zhengjun; Chen, Gang; Ross, Caroline A.

2017-11-01

The role of the ferroelectric polarization state and crystal structure in determining the room-temperature thermal conductivity of epitaxial BiFeO3 thin films is investigated. The ferroelectric domain configuration is varied by changing the oxygen partial pressure during growth, as well as by polarizing the samples by the application of an in situ electric field during the thermal conductivity measurement. However, little or no dependence of thermal conductivity on the ferroelectric domain structure is observed. In contrast, the thermal conductivity significantly depends on the morphotropic phase structure, being about 2 /3 as large in tetragonal-like compared to rhombohedral-like BiFeO3 film. The substantial structural dependence of thermal conductivity found here may provide a route to reversible manipulation of thermal properties.

Electrostrain in excess of 1% in polycrystalline piezoelectrics

NASA Astrophysics Data System (ADS)

Narayan, Bastola; Malhotra, Jaskaran Singh; Pandey, Rishikesh; Yaddanapudi, Krishna; Nukala, Pavan; Dkhil, Brahim; Senyshyn, Anatoliy; Ranjan, Rajeev

2018-05-01

Piezoelectric actuators transform electrical energy into mechanical energy, and because of their compactness, quick response time and accurate displacement, they are sought after in many applications. Polycrystalline piezoelectric ceramics are technologically more appealing than single crystals due to their simpler and less expensive processing, but have yet to display electrostrain values that exceed 1%. Here we report a material design strategy wherein the efficient switching of ferroelectric-ferroelastic domains by an electric field is exploited to achieve a high electrostrain value of 1.3% in a pseudo-ternary ferroelectric alloy system, BiFeO3-PbTiO3-LaFeO3. Detailed structural investigations reveal that this electrostrain is associated with a combination of several factors: a large spontaneous lattice strain of the piezoelectric phase, domain miniaturization, a low-symmetry ferroelectric phase and a very large reverse switching of the non-180° domains. This insight for the design of a new class of polycrystalline piezoceramics with high electrostrains may be useful to develop alternatives to costly single-crystal actuators.

Single-domain multiferroic BiFeO 3 films

DOE PAGES

Kuo, Chang -Yang; Hu, Z.; Yang, J. C.; ...

2016-09-01

The strong coupling between antiferromagnetism and ferroelectricity at room temperature found in BiFeO 3 generates high expectations for the design and development of technological devices with novel functionalities. However, the multi-domain nature of the material tends to nullify the properties of interest and complicates the thorough understanding of the mechanisms that are responsible for those properties. Here we report the realization of a BiFeO 3 material in thin film form with single-domain behaviour in both its magnetism and ferroelectricity: the entire film shows its antiferromagnetic axis aligned along the crystallographic b axis and its ferroelectric polarization along the c axis.more » With this we are able to reveal that the canted ferromagnetic moment due to the Dzyaloshinskii–Moriya interaction is parallel to the a axis. Moreover, by fabricating a Co/BiFeO 3 heterostructure, we demonstrate that the ferromagnetic moment of the Co film does couple directly to the canted moment of BiFeO 3.« less

Low temperature dielectric relaxation in ordinary perovskite ferroelectrics: enlightenment from high-energy x-ray diffraction

DOE PAGES

Ochoa, D. A.; Levit, R.; Fancher, C. M.; ...

2017-04-05

We report that ordinary ferroelectrics exhibit a second order phase transition that is characterized by a sharp peak in the dielectric permittivity at a frequency-independent temperature. Furthermore, these materials show a low temperature dielectric relaxation that appears to be a common behavior of perovskite systems. Tetragonal lead zirconate titanate is used here as a model system in order to explore the origin of such an anomaly, since there is no consensus about the physical phenomenon involved in it. Crystallographic and domain structure studies are performed from temperature dependent synchrotron x-ray diffraction measurement. Results indicate that the dielectric relaxation cannot bemore » associated with crystallographic or domain configuration changes. The relaxation process is then parameterized by using the Vogel–Fulcher–Tammann phenomenological equation. Finally, results allow us to hypothesize that the observed phenomenon is due to changes in the dynamic behavior of the ferroelectric domains related to the fluctuation of the local polarization.« less

Unfolding grain size effects in barium titanate ferroelectric ceramics

PubMed Central

Tan, Yongqiang; Zhang, Jialiang; Wu, Yanqing; Wang, Chunlei; Koval, Vladimir; Shi, Baogui; Ye, Haitao; McKinnon, Ruth; Viola, Giuseppe; Yan, Haixue

2015-01-01

Grain size effects on the physical properties of polycrystalline ferroelectrics have been extensively studied for decades; however there are still major controversies regarding the dependence of the piezoelectric and ferroelectric properties on the grain size. Dense BaTiO3 ceramics with different grain sizes were fabricated by either conventional sintering or spark plasma sintering using micro- and nano-sized powders. The results show that the grain size effect on the dielectric permittivity is nearly independent of the sintering method and starting powder used. A peak in the permittivity is observed in all the ceramics with a grain size near 1 μm and can be attributed to a maximum domain wall density and mobility. The piezoelectric coefficient d33 and remnant polarization Pr show diverse grain size effects depending on the particle size of the starting powder and sintering temperature. This suggests that besides domain wall density, other factors such as back fields and point defects, which influence the domain wall mobility, could be responsible for the different grain size dependence observed in the dielectric and piezoelectric/ferroelectric properties. In cases where point defects are not the dominant contributor, the piezoelectric constant d33 and the remnant polarization Pr increase with increasing grain size. PMID:25951408

Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

NASA Astrophysics Data System (ADS)

Kwamen, C.; Rössle, M.; Reinhardt, M.; Leitenberger, W.; Zamponi, F.; Alexe, M.; Bargheer, M.

2017-10-01

Monitoring structural changes in ferroelectric thin films during electric field induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms, and domain walls in ferroelectric nanostructures. We combine standard ferroelectric test sequences of switching and nonswitching electrical pulses with time-resolved x-ray diffraction to investigate the structural response of a nanoscale Pb (Zr0.2Ti0.8) O3 ferroelectric oxide capacitor upon charging, discharging, and polarization reversal. We observe that a nonlinear piezoelectric response of the ferroelectric layer develops on a much longer time scale than the R C time constant of the device. The complex atomic motion during the ferroelectric polarization reversal starts with a contraction of the lattice, whereas the expansive piezoelectric response sets in after considerable charge flow due to the applied voltage pulses on the electrodes of the capacitor. Our simultaneous measurements on a working device elucidate and visualize the complex interplay of charge flow and structural motion and challenges theoretical modeling.

Aperiodic topological order in the domain configurations of functional materials

NASA Astrophysics Data System (ADS)

Huang, Fei-Ting; Cheong, Sang-Wook

2017-03-01

In numerous functional materials, such as steels, ferroelectrics and magnets, new functionalities can be achieved through the engineering of the domain structures, which are associated with the ordering of certain parameters within the material. The recent progress in technologies that enable imaging at atomic-scale spatial resolution has transformed our understanding of domain topology, revealing that, along with simple stripe-like or irregularly shaped domains, intriguing vortex-type topological domain configurations also exist. In this Review, we present a new classification scheme of 'Zm Zn domains with Zl vortices' for 2D macroscopic domain structures with m directional variants and n translational antiphases. This classification, together with the concepts of topological protection and topological charge conservation, can be applied to a wide range of materials, such as multiferroics, improper ferroelectrics, layered transition metal dichalcogenides and magnetic superconductors, as we discuss using selected examples. The resulting topological considerations provide a new basis for the understanding of the formation, kinetics, manipulation and property optimization of domains and domain boundaries in functional materials.

Junction size dependence of ferroelectric properties in e-beam patterned BaTiO{sub 3} ferroelectric tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, A. V.; Gupta, A.; Althammer, M.

We investigate the switching characteristics in BaTiO{sub 3}-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both samplemore » stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.« less

Effect of the Sintering Temperature on the Formation of Ferroelectric Properties of a Lead Zirconate-Titanate Ceramic

NASA Astrophysics Data System (ADS)

Barabanova, E. V.; Topchiev, A. A.; Malyshkina, O. V.

2018-04-01

Effect of the sintering temperature on the formation of the microstructure, the domain structure, and the ferroelectric properties of a lead zirconate-titanate Pb(Ti x Zr1 - x )O3 piezoelectric ceramics has been studied. It is shown that the ferroelectric phase forms at a sintering temperature of 860°C. At higher sintering temperatures, the main effect on the properties is due to a unit cell deformation and free charge carriers.

Local control of the resistivity of graphene through mechanically induced switching of a ferroelectric superlattice

NASA Astrophysics Data System (ADS)

Humed Yusuf, Mohammed; Gura, Anna; Du, Xu; Dawber, Matthew

2017-06-01

We exploit nanoscale mechanically induced switching of an artificially layered ferroelectric material, used as an active substrate, to achieve the local manipulation of the electrical transport properties of graphene. In Graphene Ferroelectric Field Effect Transistors (GFeFETs), the graphene channel’s charge state is controlled by an underlying ferroelectric layer. The tip of an atomic force microscope (AFM) can be used to mechanically ‘write’ nanoscale regions of the graphene channel and ‘read’ off the modulation in the transport behavior. The written features associated with the switching of ferroelectric domains remain polarized until an electrical reset operation is carried out. Our result provides a method for flexible and reversible nano-scale manipulation of the transport properties of a broad class of 2D materials.

Structural sensitivity of x-ray Bragg projection ptychography to domain patterns in epitaxial thin films

NASA Astrophysics Data System (ADS)

Hruszkewycz, S. O.; Zhang, Q.; Holt, M. V.; Highland, M. J.; Evans, P. G.; Fuoss, P. H.

2016-10-01

Bragg projection ptychography (BPP) is a coherent diffraction imaging technique capable of mapping the spatial distribution of the Bragg structure factor in nanostructured thin films. Here, we show that, because these images are projections, the structural sensitivity of the resulting images depends on the film thickness and the aspect ratio and orientation of the features of interest and that image interpretation depends on these factors. We model changes in contrast in the BPP reconstructions of simulated PbTiO3 ferroelectric thin films with meandering 180∘ stripe domains as a function of film thickness, discuss their origin, and comment on the implication of these factors on the design of BPP experiments of general nanostructured films.

The contribution of 180° domain wall motion to dielectric properties quantified from in situ X-ray diffraction

DOE PAGES

Fancher, C. M.; Brewer, S.; Chung, C. C.; ...

2016-12-27

Here, the contribution of 180° domain wall motion to polarization and dielectric properties of ferroelectric materials has yet to be determined experimentally. In this paper, an approach for estimating the extent of (180°) domain reversal during application of electric fields is presented. We demonstrate this method by determining the contribution of domain reversal to polarization in soft lead zirconate titanate during application of strong electric fields. At the maximum applied field, domain reversal was determined to account for >80% of the measured macroscopic polarization. We also apply the method to quantify the contribution of domain reversal to the weak-field dielectricmore » permittivity of BaTiO 3. The results of this analysis determined that domain reversal accounts for up to ~70% of the macroscopic dielectric permittivity in BaTiO 3. These results demonstrate the predominance of domain reversal to high and low-field dielectric response in ferroelectric polycrystalline materials.« less

Dependence of the ferroelectric domain shape on the electric field of the microscope tip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Starkov, Alexander S.; Starkov, Ivan A., E-mail: starkov@feec.vutbr.cz

2015-08-21

A theory of an equilibrium shape of the domain formed in an electric field of a scanning force microscope (SFM) tip is proposed. We do not assume a priori that the domain has a fixed form. The shape of the domain is defined by the minimum of the free energy of the ferroelectric. This energy includes the energy of the depolarization field, the energy of the domain wall, and the energy of the interaction between the domain and the electric field of the SFM tip. The contributions of the apex and conical part of the tip are examined. Moreover, inmore » the proposed approach, any narrow tip can be considered. The surface energy is determined on the basis of the Ginzburg-Landau-Devonshire theory and takes into account the curvature of the domain wall. The variation of the free energy with respect to the domain shape leads to an integro-differential equation, which must be solved numerically. Model results are illustrated for lithium tantalate ceramics.« less

The contribution of 180° domain wall motion to dielectric properties quantified from in situ X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fancher, C. M.; Brewer, S.; Chung, C. C.

2017-03-01

The contribution of 180° domain wall motion to polarization and dielectric properties of ferroelectric materials has yet to be determined experimentally. In this paper, an approach for estimating the extent of (180°) domain reversal during application of electric fields is presented. We demonstrate this method by determining the contribution of domain reversal to polarization in soft lead zirconate titanate during application of strong electric fields. At the maximum applied field, domain reversal was determined to account for >80% of the measured macroscopic polarization. We also apply the method to quantify the contribution of domain reversal to the weak-field dielectric permittivitymore » of BaTiO 3. The results of this analysis determined that domain reversal accounts for up to ~70% of the macroscopic dielectric permittivity in BaTiO 3. These results demonstrate the predominance of domain reversal to high and low-field dielectric response in ferroelectric polycrystalline materials.« less

Revealing the core-shell interactions of a giant strain relaxor ferroelectric 0.75Bi1/2Na1/2TiO3-0.25SrTiO3.

PubMed

Liu, Na; Acosta, Matias; Wang, Shuai; Xu, Bai-Xiang; Stark, Robert W; Dietz, Christian

2016-11-14

Lead-free relaxor ferroelectrics that feature a core-shell microstructure provide an excellent electromechanical response. They even have the potential to replace the environmentally hazardous lead-zirconia-titanate (PZT) in large strain actuation applications. Although the dielectric properties of core-shell ceramics have been extensively investigated, their piezoelectric properties are not yet well understood. To unravel the interfacial core-shell interaction, we studied the relaxation behaviour of field-induced ferroelectric domains in 0.75Bi 1/2 Na 1/2 TiO 3 -0.25SrTiO 3 (BNT-25ST), as a typical core-shell bulk material, using a piezoresponse force microscope. We found that after poling, lateral domains emerged at the core-shell interface and propagated to the shell region. Phase field simulations showed that the increased electrical potential beneath the core is responsible for the in-plane domain evolution. Our results imply that the field-induced domains act as pivotal points at the coherent heterophase core-shell interface, reinforcing the phase transition in the non-polar shell and thus promoting the giant strain.

CuInP₂S₆ Room Temperature Layered Ferroelectric.

PubMed

Belianinov, A; He, Q; Dziaugys, A; Maksymovych, P; Eliseev, E; Borisevich, A; Morozovska, A; Banys, J; Vysochanskii, Y; Kalinin, S V

2015-06-10

We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

Single-crystal-like, c-axis oriented BaTiO3 thin films with high-performance on flexible metal templates for ferroelectric applications

NASA Astrophysics Data System (ADS)

Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Kim, Dae Ho

2009-06-01

Epitaxial, c-axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ˜11.5 μC/cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.

Simulation of fatigue damage in ferroelectric polycrystals under mechanical/electrical loading

NASA Astrophysics Data System (ADS)

Kozinov, S.; Kuna, M.

2018-07-01

The reliability of smart-structures made of ferroelectric ceramics is essentially reduced by the formation of cracks under the action of external electrical and/or mechanical loading. In the current research a numerical model for low-cycle fatigue in ferroelectric mesostructures is proposed. In the finite element simulations a combination of two user element routines is utilized. The first one is used to model a micromechanical ferroelectric domain switching behavior inside the grains. The second one is used to simulate fatigue damage of grain boundaries by a cohesive zone model (EMCCZM) based on an electromechanical cyclic traction-separation law (TSL). For numerical simulations a scanning electron microscope image of the ceramic's grain structure was digitalized and meshed. The response of this mesostructure to cyclic electrical or mechanical loading is systematically analyzed. As a result of the simulations, the distribution of electric potential, field, displacement and polarization as well as mechanical stresses and deformations inside the grains are obtained. At the grain boundaries, the formation and evolution of damage are analyzed until final failure and induced degradation of electric permittivity. It is found that the proposed model correctly mimics polycrystalline behavior during poling processes and progressive damage under cyclic electromechanical loading. To the authors' knowledge, it is the first model and numerical analysis of ferroelectric polycrystals taking into account both domain reorientation and cohesive modeling of intergranular fracture. It can help to understand failure mechanisms taking place in ferroelectrics during fatigue processes.

Influence of anisotropic strain on the dielectric and ferroelectric properties of SrTiO3 thin films on DyScO3 substrates

NASA Astrophysics Data System (ADS)

Biegalski, M. D.; Vlahos, E.; Sheng, G.; Li, Y. L.; Bernhagen, M.; Reiche, P.; Uecker, R.; Streiffer, S. K.; Chen, L. Q.; Gopalan, V.; Schlom, D. G.; Trolier-McKinstry, S.

2009-06-01

The in-plane dielectric and ferroelectric properties of coherent anisotropically strained SrTiO3 thin films grown on orthorhombic (101) DyScO3 substrates were examined as a function of the angle between the applied electric field and the principal directions of the substrate. The dielectric permittivity revealed two distinct maxima as a function of temperature along the [100]p and [010]p SrTiO3 pseudocubic directions. These data, in conjunction with optical second-harmonic generation, show that the switchable ferroelectric polarization develops first predominantly along the in-plane axis with the larger tensile strain before developing a polarization component along the perpendicular direction with smaller strain as well, leading to domain twinning at the lower temperature. Finally, weak signatures in the dielectric and second-harmonic generation response were detected at the SrTiO3 tilt transition close to 165 K. These studies indicate that anisotropic biaxial strain can lead to new ferroelectric domain reorientation transitions that are not observed in isotropically strained films.

Ferroelectricity, Antiferroelectricity, and Ultrathin 2D Electron/Hole Gas in Multifunctional Monolayer MXene.

PubMed

Chandrasekaran, Anand; Mishra, Avanish; Singh, Abhishek Kumar

2017-05-10

The presence of ferroelectric polarization in 2D materials is extremely rare due to the effect of the surface depolarizing field. Here, we use first-principles calculations to show the largest out-of-plane polarization observed in a monolayer in functionalized MXenes (Sc 2 CO 2 ). The switching of polarization in this new class of ferroelectric materials occurs through a previously unknown intermediate antiferroelectric structure, thus establishing three states for applications in low-dimensional nonvolatile memory. We show that the armchair domain interface acts as an 1D metallic nanowire separating two insulating domains. In the case of the van der Waals bilayer we observe, interestingly, the presence of an ultrathin 2D electron/hole gas (2DEG) on the top/bottom layers, respectively, due to the redistrubution of charge carriers. The 2DEG is nondegenerate due to spin-orbit coupling, thus paving the way for spin-orbitronic devices. The coexistence of ferroelectricity, antiferroelectricity, 2DEG, and spin-orbit splitting in this system suggests that such 2D polar materials possess high potential for device application in a multitude of fields ranging from nanoelectronics to photovoltaics.

Nonlinear dielectric response and transient current: An effective potential for ferroelectric domain wall displacement

NASA Astrophysics Data System (ADS)

Placeres Jiménez, Rolando; Pedro Rino, José; Marino Gonçalves, André; Antonio Eiras, José

2013-09-01

Ferroelectric domain walls are modeled as rigid bodies moving under the action of a potential field in a dissipative medium. Assuming that the dielectric permittivity follows the dependence ɛ '∝1/(α+βE2), it obtained the exact expression for the effective potential. Simulations of polarization current correctly predict a power law. Such results could be valuable in the study of domain wall kinetic and ultrafast polarization processes. The model is extended to poled samples allowing the study of nonlinear dielectric permittivity under subswitching electric fields. Experimental nonlinear data from PZT 20/80 thin films and Fe+3 doped PZT 40/60 ceramic are reproduced.

Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

NASA Astrophysics Data System (ADS)

Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

2011-12-01

Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.

Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr xTi 1-xO 3 (PZT)/rhombohedral (R) PbZr xTi 1-xO 3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface.more » Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

DOE PAGES

Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...

2016-10-31

Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr xTi 1-xO 3 (PZT)/rhombohedral (R) PbZr xTi 1-xO 3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface.more » Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

Inverting polar domains via electrical pulsing in metallic germanium telluride

PubMed Central

Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

2017-01-01

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

Direct observation of charged domain walls in hybrid improper ferroelectric (Ca,Sr)3Ti2O7

NASA Astrophysics Data System (ADS)

Kurushima, Kousuke; Yoshimoto, Wataru; Ishii, Yui; Cheong, Sang-Wook; Mori, Shigeo

2017-10-01

We investigated ferroelectric (FE) domain wall structures including “charged domain walls” of hybrid improper FE (Ca,Sr)3Ti2O7 at the subatomic resolution by dark-field transmission electron microscopy (TEM) and high-resolution state-of-the-art aberration-corrected high-angle annular-dark-field (HAADF) scanning transmission electron microscopy (STEM). Dark-field TEM and high-resolution HAADF-STEM images obtained in the FE phase of single crystals of Ca2.46Sr0.54Ti2O7 revealed the formation of abundant charged domain walls with the head-to-head and tail-to-tail configurations in the FE domain structure, in addition to the FE 180° domain structure. The charged domain walls with the head-to-head and tail-to-tail FE polarizations exist stably and can be characterized as the unique double arc-type displacement of Ca/Sr ions in a unit cell without charge accumulation.

Ferroelastic domain structure and phase transition in single-crystalline [PbZn 1/3Nb 2/3O 3] 1-x[PbTiO 3] x observed via in situ x-ray microbeam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Tao; Du, Zehui; Tamura, Nobumichi

(1-x)Pb(Zn 1/3Nb 2/3)O 3-xPbTiO 3 ((1-x)PZN-xPT in short) is one of the most important piezoelectric materials. In this study, we extensively investigated (1-x)PZN-xPT (x = 0.07–0.11) ferroelectric single crystals using in-situ synchrotron μXRD, complemented by TEM and PFM, to correlate microstructures with phase transitions. The results reveal that (i) at 25°C, the equilibrium state of (1-x)PZN-xPT is a metastable orthorhombic phase for x = 0.07 and 0.08, while it shows coexistence of orthorhombic and tetragonal phases for x = 0.09 and x = 0.11, with all ferroelectric phases accompanied by ferroelastic domains; (ii) upon heating, the phase transformation in xmore » = 0.07 is Orthorhombic → Monoclinic → Tetragonal → Cubic. The coexistence of ferroelectric tetragonal and paraelectric cubic phases was in-situ observed in x = 0.08 above Curie temperature (T C), and (iii) phase transition can be explained by the evolution of the ferroelectric and ferroelastic domains. These results disclose that (1-x)PZN-xPT are in an unstable regime, which is possible factor for its anomalous dielectric response and high piezoelectric coefficient.« less

Ferroelastic domain structure and phase transition in single-crystalline [PbZn 1/3Nb 2/3O 3] 1-x[PbTiO 3] x observed via in situ x-ray microbeam

DOE PAGES

Li, Tao; Du, Zehui; Tamura, Nobumichi; ...

2017-11-10

(1-x)Pb(Zn 1/3Nb 2/3)O 3-xPbTiO 3 ((1-x)PZN-xPT in short) is one of the most important piezoelectric materials. In this study, we extensively investigated (1-x)PZN-xPT (x = 0.07–0.11) ferroelectric single crystals using in-situ synchrotron μXRD, complemented by TEM and PFM, to correlate microstructures with phase transitions. The results reveal that (i) at 25°C, the equilibrium state of (1-x)PZN-xPT is a metastable orthorhombic phase for x = 0.07 and 0.08, while it shows coexistence of orthorhombic and tetragonal phases for x = 0.09 and x = 0.11, with all ferroelectric phases accompanied by ferroelastic domains; (ii) upon heating, the phase transformation in xmore » = 0.07 is Orthorhombic → Monoclinic → Tetragonal → Cubic. The coexistence of ferroelectric tetragonal and paraelectric cubic phases was in-situ observed in x = 0.08 above Curie temperature (T C), and (iii) phase transition can be explained by the evolution of the ferroelectric and ferroelastic domains. These results disclose that (1-x)PZN-xPT are in an unstable regime, which is possible factor for its anomalous dielectric response and high piezoelectric coefficient.« less

Electromechanical response of amorphous LaAlO{sub 3} thin film probed by scanning probe microscopies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David

The electromechanical response of a 3 nm thick amorphous LaAlO{sub 3} layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion ofmore » oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.« less

Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies

NASA Astrophysics Data System (ADS)

Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David; Vilquin, Bertrand; Saint Girons, Guillaume; Pelloquin, Sylvain; Gautier, Brice

2014-07-01

The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.

Local conductance: A means to extract polarization and depolarizing fields near domain walls in ferroelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Douglas, A. M.; Kumar, A.; Gregg, J. M.

Conducting atomic force microscopy images of bulk semiconducting BaTiO{sub 3} surfaces show clear stripe domain contrast. High local conductance correlates with strong out-of-plane polarization (mapped independently using piezoresponse force microscopy), and current-voltage characteristics are consistent with dipole-induced alterations in Schottky barriers at the metallic tip-ferroelectric interface. Indeed, analyzing current-voltage data in terms of established Schottky barrier models allows relative variations in the surface polarization, and hence the local domain structure, to be determined. Fitting also reveals the signature of surface-related depolarizing fields concentrated near domain walls. Domain information obtained from mapping local conductance appears to be more surface-sensitive than thatmore » from piezoresponse force microscopy. In the right materials systems, local current mapping could therefore represent a useful complementary technique for evaluating polarization and local electric fields with nanoscale resolution.« less

Proceedings of the 8th International Symposium on Applications of Ferroelectrics

NASA Astrophysics Data System (ADS)

Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

1993-02-01

The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

NASA Astrophysics Data System (ADS)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Combinatorial investigation of rare-earth free permanent magnets

NASA Astrophysics Data System (ADS)

Fackler, Sean Wu

The combinatorial high throughput method allows one to rapidly study a large number of samples with systematically changing parameters. We apply this method to study Fe-Co-V alloys as alternatives to rare-earth permanent magnets. Rare-earth permanent magnets derive their unmatched magnetic properties from the hybridization of Fe and Co with the f-orbitals of rare-earth elements, which have strong spin-orbit coupling. It is predicted that Fe and Co may also have strong hybridization with 4d and 5d refractory transition metals with strong spin-orbit coupling. Refractory transition metals like V also have the desirable property of high temperature stability, which is important for permanent magnet applications in traction motors. In this work, we focus on the role of crystal structure, composition, and secondary phases in the origin of competitive permanent magnetic properties of a particular Fe-Co-V alloy. Fe38Co52V10, compositions are known as Vicalloys. Fe-CoV composition spreads were sputtered onto three-inch silicon wafers and patterned into discrete sample pads forming a combinatorial library. We employed highthroughput screening methods using synchrotron X-rays, wavelength dispersive spectroscopy, and magneto-optical Kerr effect (MOKE) to rapidly screen crystal structure, composition, and magnetic properties, respectively. We found that in-plane magnetic coercive fields of our Vicalloy thin films agree with known bulk values (300 G), but found a remarkable eight times increase of the out-of-plane coercive fields (˜2,500 G). To explain this, we measured the switching fields between in-plane and out-of-plane thin film directions which revealed that the Kondorsky model of 180° domain wall reversal was responsible for Vicalloy's enhanced out-of-plane coercive field and possibly its permanent magnetic properties. The Kondorsky model suggests that domain-wall pinning is the origin of Vicalloy's permanent magnetic properties, in contrast to strain, shape, or crystalline anisotropy mechanisms suggested in the literature. We also studied the thickness dependence of an Fe70Co30- V thin film library to consider the unique effects of our thin film libraries which are not found in bulk samples. We present results of data mining of synchrotron X-ray diffraction data using non-negative matrix factorization (NMF). NMF can automatically identify pure crystal phases that make up an unknown phase mixture. We found a strong correlation between magnetic properties and crystal phase quantity using this valuable visualization. In addition to the combinatorial study, this dissertation includes a study of strain controlled properties of magnetic thin films for future applications in random access memories. We investigated the local coupling between dense magnetic stripe domains in transcritical Permalloy (tPy) thin films and ferroelectric domains of BaTiO3 single crystals in a tPy/BaTiO3 heterostructure. Two distinct changes in the magnetic stripe domains of tPy were observed from the magnetic force microscopy images after cooling the heterostructure from above the ferroelectric Curie temperature of BaTiO3 (120°C) to room temperature. First, an abrupt break in the magnetic stripe domain direction was found at the ferroelectric a-c-domain boundaries due to an induced change in in-plane magnetic anisotropy. Second, the magnetic stripe domain period increased when coupled to a ferroelectric a-domain due to a change in out-of-plane magnetic anisotropy. Micromagnetic simulations reveal that local magnetic anisotropy energy from inverse magnetostriction is conserved between in-plane and out-of-plane components.

Pressure effects on the magnetoelectric properties of a multiferroic triangular-lattice antiferromagnet CuCrO2

NASA Astrophysics Data System (ADS)

Aoyama, Takuya; Miyake, Atsushi; Kagayama, Tomoko; Shimizu, Katsuya; Kimura, Tsuyoshi

2013-03-01

Effects of high pressure exceeding 10 GPa on spin-driven ferroelectricity were investigated for a multiferroic, triangular-lattice antiferromagnet (TLA), CuCrO2. For this purpose, we developed a system which enables us to measure ferroelectric polarization under a pressure of 10 GPa by using a diamond anvil cell. We found that the magnetic transition temperature accompanying the ferroelectric one in CuCrO2 was remarkably enhanced by applying pressure. The result is simply explained by considering the pressure-induced enhancement of inter- and/or intralayer magnetic interaction due to the compression of the lattice. In addition, the coercive electric field for the polarization reversal was also increased with increasing pressure, while the amplitude of the ferroelectric polarization was steeply suppressed at around 8 GPa. A possible origin of the observed pressure effects on the ferroelectric property in the multiferroic TLA is discussed in terms of a ferroelectric-antiferroelectric transition and structural domain rearrangement by uniaxial stress.

Measurement and modeling of dielectric properties of Pb(Zr,Ti)O3 ferroelectric thin films.

PubMed

Renoud, Raphaël; Borderon, Caroline; Gundel, Hartmut W

2011-09-01

In this study, the real and imaginary parts of the complex permittivity of lead zirconate titanate ferroelectric thin films are studied in the frequency range of 100 Hz to 100 MHz. The permittivity is well fitted by the Cole-Cole model. The variation of the relaxation time with the temperature is described by the Arrhenius law and an activation energy of 0.38 eV is found. Because of its nonlinear character, the dielectric response of the ferroelectric sample depends on the amplitude of the applied ac electric field. The permittivity is composed of three different contributions: the first is due to intrinsic lattice, the second is due to domain wall vibrations, and the third is due to domain wall jumps between pinning centers. This last contribution depends on the electric field, so it is important to control the field amplitude to obtain the desired values of permittivity and tunability.

Selective Deposition of Silver Oxide on Single-Domain Ferroelectric Nanoplates and Their Efficient Visible-Light Photoactivity.

PubMed

Chen, Fang; Ren, Zhaohui; Gong, Siyu; Li, Xiang; Shen, Ge; Han, Gaorong

2016-08-16

In this work, single-crystal and single-domain PbTiO3 nanoplates are employed as substrates to prepare Ag2 O/PbTiO3 composite materials through a photodeposition method. It is revealed that silver oxide nanocrystals with an average size of 63 nm are selectively deposited on the positive polar surface of the ferroelectric substrate. The possible mechanism leading to the formation of silver oxide is that silver ions are first reduced to silver and then oxidized by oxygen generation. The composite shows an efficient photodegradation performance towards rhodamine B (RhB) and methyl orange (MO) under visible-light irradiation. Such highly efficient photoactivity can be attributed to the ferroelectric polarization effect of the substrate, which promotes the separation of photogenerated electrons and holes at the interface. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film

DOE PAGES

Li, Linglong; Cao, Ye; Somnath, Suhas; ...

2017-03-15

Understanding the dynamic behavior of interfaces in ferroic materials is an important field of research with widespread practical implications, as the motion of domain walls and phase boundaries are associated with substantial increases in dielectric and piezoelectric effects. Although commonly studied in the macroscopic regime, the local dynamics of interfaces have received less attention, with most studies limited to domain growth and/or reversal by piezoresponse force microscopy (PFM). Here, spatial mapping of local domain wall-related relaxation in a tensile-strained PbTiO 3 thin film using time-resolved band-excitation PFM is demonstrated, which allows exploring of the field-induced strain (piezoresponse) as a functionmore » of applied voltage and time. Through multivariate statistical analysis on the resultant 4-dimensional dataset (x,y,V,t) with functional fitting, it is determined that the relaxation is strongly correleated with the distance to the domain walls, and varies based on the type of domain wall present in the probed volume. Phase-field modeling shows the relaxation behavior near and away from the interfaces, and confirms the modulation of the z-component of polarization by wall motion, yielding the observed piezoresponse relaxation. Lastly, these studies shed light on the local dynamics of interfaces in ferroelectric thin films, and are therefore important for the design of ferroelectric-based components in microelectromechanical systems.« less

Raman signatures of ferroic domain walls captured by principal component analysis.

PubMed

Nataf, G F; Barrett, N; Kreisel, J; Guennou, M

2018-01-24

Ferroic domain walls are currently investigated by several state-of-the art techniques in order to get a better understanding of their distinct, functional properties. Here, principal component analysis (PCA) of Raman maps is used to study ferroelectric domain walls (DWs) in LiNbO 3 and ferroelastic DWs in NdGaO 3 . It is shown that PCA allows us to quickly and reliably identify small Raman peak variations at ferroelectric DWs and that the value of a peak shift can be deduced-accurately and without a priori-from a first order Taylor expansion of the spectra. The ability of PCA to separate the contribution of ferroelastic domains and DWs to Raman spectra is emphasized. More generally, our results provide a novel route for the statistical analysis of any property mapped across a DW.

Giant Permittivity in Epitaxial Ferroelectric Heterostructures

NASA Astrophysics Data System (ADS)

Erbil, A.; Kim, Y.; Gerhardt, R. A.

1996-08-01

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.

CuInP 2S 6 Room Temperature Layered Ferroelectric

DOE PAGES

Belianinov, Alex; He, Qian; Dziaugys, Andrius; ...

2015-05-01

In this paper, we explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP 2S 6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleavedmore » bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V—likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. Finally, the existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing “graphene family”.« less

High-temperature solution growth and characterization of (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 piezo-/ferroelectric single crystals

NASA Astrophysics Data System (ADS)

Paterson, Alisa R.; Zhao, Jinyan; Liu, Zenghui; Wu, Xiaoqing; Ren, Wei; Ye, Zuo-Guang

2018-03-01

Complex perovskite PbTiO3-Bi(Me‧Me″)O3 solid solutions represent new materials systems that possess a higher Curie temperature (TC) than the relaxor-PbTiO3 solid solutions, and are useful for potential applications. To this end, novel ferroelectric single crystals of the (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 (PT-BZN) solid solution were successfully grown by the high-temperature solution growth (HTSG) method. Powder X-ray diffraction shows that the symmetry of the grown crystals is tetragonal. The dielectric permittivity and optical domain structures were characterized by dielectric measurements and polarized light microscopy, respectively, as a function of temperature, revealing a first-order ferroelectric-paraelectric phase transition at a TC of 436 ± 2 °C. Based on the TC, the average composition of the crystal platelet was estimated to be 0.58PT-0.42BZN. Piezoresponse force microscopy measurements of the phase and amplitude as a function of voltage reveal the complex polar domain structure and demonstrate the ferroelectric switching behaviour of these materials. These results suggest that the PT-BZN single crystals indeed form a new family of high TC piezo-/ferroelectric materials which are potentially useful for the fabrication of electromechanical transducers for high-temperature applications.

Observation of ferroelastic domains in layered magnetic compounds using birefringence imaging

NASA Astrophysics Data System (ADS)

Miura, Yoko; Okumura, Kazuya; Manaka, Hirotaka

2018-03-01

The two-dimensional Heisenberg antiferromagnet (C2H5NH3)2CuCl4 is a candidate compound for the coexistence of ferroelectricity and ferroelasticity; however, the microscopic observations of multiferroic domains may still be unclear. In-plane birefringence imaging measurements were performed to observe the manner in which the ferroelectric and the ferroelastic domains change during phase transitions between 15 K and 300 K. It was found that 90° ferroelastic domains appeared in the ab-plane at 300 K. As the temperature decreased toward 15 K, each domain inverted at a certain temperature (T a) without structural or magnetic phase transitions. The value of T a was found to be significantly influenced by external stresses; therefore, birefringence imaging techniques are useful for investigating variations in ferroelastic domains with temperature. Furthermore, a structural phase transition from orthorhombic to monoclinic or triclinic occurred at 230 ~ 240 K; however, no spontaneous polarization appeared in the ab-plane over the entire investigated range.

Tip-induced domain growth on the non-polar cuts of lithium niobate single-crystals

DOE PAGES

Alikin, Denis O.; Ievlev, Anton; Turigin, Anton P.; ...

2015-05-05

Currently ferroelectric materials with designed domain structures are considered as a perspective material for new generation of photonic, data storage and data processing devices. Application of external electric field is the most convenient way of the domain structure formation. Lots of papers are devoted to investigation of the domain kinetics on polar surface of crystals while the forward growth remains one of the most mysterious stages due to lack of experimental methods allowing to study it. Here we performed tip-induced polarization reversal on X- and Y-non-polar cuts in single-crystal of congruent lithium niobate allows us to study the forward growthmore » with high spatial resolution. The revealed difference in the shape and length of domains induced on X- and Y-cuts is beyond previously developed theoretical approaches used for the theoretical consideration of the domains growth at non-polar ferroelectric surfaces. Lastly, to explain experimental results we used kinetic approach with anisotropy of screening efficiency along different crystallographic directions.« less

Interesting properties of ferroelectric Pb(Zr0.5Ti0.5)O3 nanotube array embedded in matrix medium

NASA Astrophysics Data System (ADS)

Adhikari, Rajendra; Fu, Huaxiang

2013-07-01

Finite-temperature first-principles based simulations are used to determine the structural and polarization properties of ferroelectric Pb(Zr0.5Ti0.5)O3 (PZT) nanotube array embedded in matrix medium of different ferroelectric strengths. Various interesting properties are found, including (i) that the system can behave either 3D-like, or 2D-like, or 1D-like; and (ii) the existence of an unusual structural phase in which 180° stripe domain coexists with vortex. Furthermore, we show in PZT tube array that a vortex phase can spontaneously transform into a ferroelectric phase of polarization by temperature alone, without applying external electric fields. Microscopic insights for understanding these properties are provided.

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruverman, Alexei; Tsymbal, Evgeny Y.; Eom, Chang-Beom

2017-05-03

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modelingmore » of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.« less

Discovery of stable skyrmionic state in ferroelectric nanocomposites

NASA Astrophysics Data System (ADS)

Nahas, Y.; Prokhorenko, S.; Louis, L.; Gui, Z.; Kornev, I.; Bellaiche, L.

2015-10-01

Non-coplanar swirling field textures, or skyrmions, are now widely recognized as objects of both fundamental interest and technological relevance. So far, skyrmions were amply investigated in magnets, where due to the presence of chiral interactions, these topological objects were found to be intrinsically stabilized. Ferroelectrics on the other hand, lacking such chiral interactions, were somewhat left aside in this quest. Here we demonstrate, via the use of a first-principles-based framework, that skyrmionic configuration of polarization can be extrinsically stabilized in ferroelectric nanocomposites. The interplay between the considered confined geometry and the dipolar interaction underlying the ferroelectric phase instability induces skyrmionic configurations. The topological structure of the obtained electrical skyrmion can be mapped onto the topology of domain-wall junctions. Furthermore, the stabilized electrical skyrmion can be as small as a few nanometers, thus revealing prospective skyrmion-based applications of ferroelectric nanocomposites.

Structural sensitivity of x-ray Bragg projection ptychography to domain patterns in epitaxial thin films

DOE PAGES

Hruszkewycz, S. O.; Zhang, Q.; Holt, M. V.; ...

2016-10-04

Bragg projection ptychography (BPP) is a coherent diffraction imaging technique capable of mapping the spatial distribution of the Bragg structure factor in nanostructured thin films. Here, we show that, because these images are projections, the structural sensitivity of the resulting images depends on the film thickness and the aspect ratio and orientation of the features of interest and that image interpretation depends on these factors. Lastly, we model changes in contrast in the BPP reconstructions of simulated PbTiO 3 ferroelectric thin films with meandering 180° stripe domains as a function of film thickness, discuss their origin, and comment on themore » implication of these factors on the design of BPP experiments of general nanostructured films.« less

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

NASA Astrophysics Data System (ADS)

Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

2009-01-01

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

PubMed Central

2011-01-01

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. PMID:21794156

Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

NASA Astrophysics Data System (ADS)

Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Yurko, E. I.

2014-02-01

Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO3(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U bias = 40 V is K ≅ 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U st ˜ 0.7-1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO 3-buffered ferroelectric BaTiO 3 film on GaAs

DOE PAGES

Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; ...

2015-11-16

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO 3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO 3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy andmore » first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO 3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO 3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

DOE PAGES

Vasudevan, Rama K.; Balke, Nina; Maksymovych, Peter; ...

2017-05-01

Here, ferroelectric materials have remained one of the major focal points of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time- and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures and walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems.

Development of lead zirconate titanate cantilevers on the micrometer length scale

NASA Astrophysics Data System (ADS)

Martin, Christopher Robert

The objective of this research project was to fabricate a functional ferroelectric microcantilever from patterned lead zirconate titanate (PZT) thin films. Cantilevers fabricated from ferroelectric materials have tremendous potential in sensing applications, particularly due to the increased sensitivity that miniaturized devices offer. This thesis highlights and explores a number of the processing issues that hindered the production of a working prototype. PZT is patterned using soft lithography-inspired techniques from a PZT chemical precursor solution derived by the chelation synthesis route. As the ability to pattern ceramic materials derived from sol-gels on the micrometer scale is a relatively new technology, this thesis aims to expand the scientific understanding of new issues that arise when working with these patterned films. For example, the use of Micromolding in Capillaries (MIMIC) to pattern the PZT thin films results in the evolution of topographical distortions from the shape of the original mold during the shrinkage of patterned thin film during drying and sintering. The factors that contribute to this effect have been explained and a new processing technique called MicroChannel Molding (muCM) was developed. This new process combines the advantages of soft lithography with traditional silicon microfabrication techniques to ensure compatibility with current industrial practices. This work lays the foundation for the future production of working ferroelectric microcantilevers. The proposed microfabrication process is described along with descriptions of each processing difficulty that was encountered. Modifications to the process are proposed along with the descriptions of alternative processing techniques that were attempted for the benefit of future researchers. This dissertation concludes with the electronic characterization of micropattemed PZT thin films. To our knowledge, the ferroelectric properties of patterned PZT thin films have never been directly characterized before. The properties are measured with a commercial ferroelectric test system connected through a conductive Atomic Force Microscope tip. The films patterned by MIMIC and muCM are compared to large-area spin cast films to identify the role that the processing method has on the resulting properties.

Photo electron emission microscopy of polarity-patterned materials

NASA Astrophysics Data System (ADS)

Yang, W.-C.; Rodriguez, B. J.; Gruverman, A.; Nemanich, R. J.

2005-04-01

This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO3 (LNO) single crystals and PbZrTiO3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ~4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ~4.6 eV at the negative domain and ~6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ~300 °C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions.

Micro- and nanodomain imaging in uniaxial ferroelectrics: Joint application of optical, confocal Raman, and piezoelectric force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shur, V. Ya., E-mail: vladimir.shur@urfu.ru; Zelenovskiy, P. S.

2014-08-14

The application of the most effective methods of the domain visualization in model uniaxial ferroelectrics of lithium niobate (LN) and lithium tantalate (LT) family, and relaxor strontium-barium niobate (SBN) have been reviewed in this paper. We have demonstrated the synergetic effect of joint usage of optical, confocal Raman, and piezoelectric force microscopies which provide extracting of the unique information about formation of the micro- and nanodomain structures. The methods have been applied for investigation of various types of domain structures with increasing complexity: (1) periodical domain structure in LN and LT, (2) nanodomain structures in LN, LT, and SBN, (3)more » nanodomain structures in LN with modified surface layer, (4) dendrite domain structure in LN. The self-assembled appearance of quasi-regular nanodomain structures in highly non-equilibrium switching conditions has been considered.« less

Switchable electric polarization and ferroelectric domains in a metal-organic-framework

DOE PAGES

Jain, Prashant; Stroppa, Alessandro; Nabok, Dmitrii; ...

2016-09-30

Multiferroics and magnetoelectrics with coexisting and coupled multiple ferroic orders are materials promising new technological advances. While most studies have focused on single-phase or heterostructures of inorganic materials, a new class of materials called metal–organic frameworks (MOFs) has been recently proposed as candidate materials demonstrating interesting new routes for multiferroism and magnetoelectric coupling. Herein, we report on the origin of multiferroicity of (CH 3) 2NH 2Mn(HCOO) 3 via direct observation of ferroelectric domains using second-harmonic generation techniques. For the first time, we observe how these domains are organized (sized in micrometer range), and how they are mutually affected by appliedmore » electric and magnetic fields. Lastly, calculations provide an estimate of the electric polarization and give insights into its microscopic origin.« less

CH3NH3PbI3 perovskites: Ferroelasticity revealed.

PubMed

Strelcov, Evgheni; Dong, Qingfeng; Li, Tao; Chae, Jungseok; Shao, Yuchuan; Deng, Yehao; Gruverman, Alexei; Huang, Jinsong; Centrone, Andrea

2017-04-01

Ferroelectricity has been proposed as a plausible mechanism to explain the high photovoltaic conversion efficiency in organic-inorganic perovskites; however, convincing experimental evidence in support of this hypothesis is still missing. Identifying and distinguishing ferroelectricity from other properties, such as piezoelectricity, ferroelasticity, etc., is typically nontrivial because these phenomena can coexist in many materials. In this work, a combination of microscopic and nanoscale techniques provides solid evidence for the existence of ferroelastic domains in both CH 3 NH 3 PbI 3 polycrystalline films and single crystals in the pristine state and under applied stress. Experiments show that the configuration of CH 3 NH 3 PbI 3 ferroelastic domains in single crystals and polycrystalline films can be controlled with applied stress, suggesting that strain engineering may be used to tune the properties of this material. No evidence of concomitant ferroelectricity was observed. Because grain boundaries have an impact on the long-term stability of organic-inorganic perovskite devices, and because the ferroelastic domain boundaries may differ from regular grain boundaries, the discovery of ferroelasticity provides a new variable to consider in the quest for improving their stability and enabling their widespread adoption.

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

NASA Astrophysics Data System (ADS)

Buragohain, P.; Richter, C.; Schenk, T.; Lu, H.; Mikolajick, T.; Schroeder, U.; Gruverman, A.

2018-05-01

Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.

Giant actuation strain nearly 0.6% in a periodically orthogonal poled lead titanate zirconate ceramic via reversible domain switching

NASA Astrophysics Data System (ADS)

Li, Faxin; Wang, Qiangzhong; Miao, Hongchen

2017-08-01

The widely used ferroelectric ceramics based actuators always suffer from small output strains (typically ˜0.1%-0.15%). Non-180° domain switching can generate a large strain in ferroelectrics but it is usually irreversible. In this work, we tailored the domain structures in a soft lead titanate zirconate (PZT) ceramic by periodical orthogonal poling. The non-180° switching in this domain-engineered PZT ceramics turns to be reversible, resulting in a local giant actuation strain of nearly 0.6% under a field of 2 kV/mm at 0.1 Hz. The large interfacial stresses between regions with different poling directions during electric loading/unloading were thought to be responsible for the reversible non-180° domain switching. The switching strain drops quickly with the increasing frequency, and stabilized at about 0.2% at or above 1.0 Hz. The large actuation strain remains quite stable after 104 cycles of loading, which is very promising for low-frequency, large-strain actuators.

Switching of the polarization of ferroelectric-ferroelastic gadolinium molybdate in a magnetic field

NASA Astrophysics Data System (ADS)

Yakushkin, E. D.

2017-10-01

A change in the character of the electric switching of polydomain ferroelectric-ferroelastic gadolinium molybdate in an external magnetic field has been detected. This change has been attributed to a magnetically stimulated increase in the pinning of domain walls. Under certain conditions, the loop of switchable polarization is degenerated into an ellipse characteristic of a linear insulator with leakage current.

Room temperature metastable monoclinic phase in BaTiO3 crystals

NASA Astrophysics Data System (ADS)

Lummen, Tom; Wang, Jianjun; Holt, Martin; Kumar, Amit; Vlahos, Eftihia; Denev, Sava; Chen, Long-Qing; Gopalan, Venkatraman

2011-03-01

Low-symmetry monoclinic phases in ferroelectric materials are of considerable interest, due to their associated enhanced electromechanical coupling. Such phases have been found in Pb-based perovskite solid solutions such as lead zirconate titanate (PZT), where they form structural bridges between the rhombohedral and tetragonal ground states in compositional space. In this work, we directly image such a monoclinic phase in BaTi O3 crystals at room-temperature, using optical second harmonic generation, Raman, and X-ray microscopic imaging techniques. Phase-field modeling indicates that ferroelectric domain microstructures in BaTi O3 induce local inhomogeneous stresses in the crystals, which can effectively trap the transient intermediate monoclinic structure that occurs across the thermal orthorhombic-tetragonal phase boundary. The induced metastable monoclinic domains are ferroelectrically soft, being easily moved by electric fields as low as 0.5 kV cm-1 . Stabilizing such intermediate low-symmetry phases could very well lead to Pb-free materials with enhanced piezoelectric properties.

Size effects of 109° domain walls in rhombohedral barium titanate single crystals—A molecular statics analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Endres, Florian, E-mail: florian.endres@ltm.uni-erlangen.de; Steinmann, Paul, E-mail: paul.steinmann@ltm.uni-erlangen.de

2016-01-14

Ferroelectric functional materials are of great interest in science and technology due to their electromechanically coupled material properties. Therefore, ferroelectrics, such as barium titanate, are modeled and simulated at the continuum scale as well as at the atomistic scale. Due to recent advancements in related manufacturing technologies the modeling and simulation of smart materials at the nanometer length scale is getting more important not only to predict but also fundamentally understand the complex material behavior of such materials. In this study, we analyze the size effects of 109° nanodomain walls in ferroelectric barium titanate single crystals in the rhombohedral phasemore » using a recently proposed extended molecular statics algorithm. We study the impact of domain thicknesses on the spontaneous polarization, the coercive field, and the lattice constants. Moreover, we discuss how the electromechanical coupling of an applied electric field and the introduced strain in the converse piezoelectric effect is affected by the thickness of nanodomains.« less

Polarization curling and flux closures in multiferroic tunnel junctions

NASA Astrophysics Data System (ADS)

Peters, Jonathan J. P.; Apachitei, Geanina; Beanland, Richard; Alexe, Marin; Sanchez, Ana M.

2016-11-01

Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers. As such configurations are devoid of screening charges provided by metal electrodes, commonly used in electronic devices, it is wise to investigate if curling polarization structures are innate to ferroelectricity or induced by the absence of electrodes. Here we show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in active PbTiO3 layers 9 unit cells thick forms Kittel-like domains, while at 6 unit cells there is a complex flux-closure curling behaviour resembling an incommensurate phase. Reducing the thickness to 3 unit cells, there is an almost complete loss of switchable polarization associated with an internal gradient.

Simulation studies of nucleation of ferroelectric polarization reversal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brennecka, Geoffrey L.; Winchester, Benjamin Michael

2014-08-01

Electric field-induced reversal of spontaneous polarization is the defining characteristic of a ferroelectric material, but the process(es) and mechanism(s) associated with the initial nucleation of reverse-polarity domains are poorly understood. This report describes studies carried out using phase field modeling of LiTaO 3, a relatively simple prototype ferroelectric material, in order to explore the effects of either mechanical deformation or optically-induced free charges on nucleation and resulting domain configuration during field-induced polarization reversal. Conditions were selected to approximate as closely as feasible those of accompanying experimental work in order to provide not only support for the experimental work but alsomore » ensure that additional experimental validation of the simulations could be carried out in the future. Phase field simulations strongly support surface mechanical damage/deformation as effective for dramatically reducing the overall coercive field (Ec) via local field enhancements. Further, optically-nucleated polarization reversal appears to occur via stabilization of latent nuclei via the charge screening effects of free charges.« less

Polarization curling and flux closures in multiferroic tunnel junctions

PubMed Central

Peters, Jonathan J. P.; Apachitei, Geanina; Beanland, Richard; Alexe, Marin; Sanchez, Ana M.

2016-01-01

Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers. As such configurations are devoid of screening charges provided by metal electrodes, commonly used in electronic devices, it is wise to investigate if curling polarization structures are innate to ferroelectricity or induced by the absence of electrodes. Here we show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in active PbTiO3 layers 9 unit cells thick forms Kittel-like domains, while at 6 unit cells there is a complex flux-closure curling behaviour resembling an incommensurate phase. Reducing the thickness to 3 unit cells, there is an almost complete loss of switchable polarization associated with an internal gradient. PMID:27848970

Piezoelectricity and Ferroelectricity in Amino Acid Glycine =

NASA Astrophysics Data System (ADS)

Seyedhosseini, Ensieh

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and switchable polarization at room temperature. Here we study piezoelectricity and ferroelectricity in the smallest amino acid glycine, representing a broad class of non-centrosymmetric amino acids. Glycine is one of the basic and important elements in biology, as it serves as a building block for proteins. Three polymorphic forms with different physical properties are possible in glycine (alpha, beta and gamma), Of special interest for various applications are non-centrosymmetric polymorphs: beta-glycine and gamma-glycine. The most useful beta-polymorph being ferroelectric took much less attention than the other due to its instability under ambient conditions. In this work, we could grow stable microcrystals of beta-glycine by the evaporation of aqueous solution on a (111)Pt/Ti/SiO2/Si substrate as a template. The effects of the solution concentration and Pt-assisted nucleation on the crystal growth and phase evolution were characterized by X-ray diffraction analysis and Raman spectroscopy. In addition, spin-coating technique was used for the fabrication of highly aligned nano-islands of beta-glycine with regular orientation of the crystallographic axes relative the underlying substrate (Pt). Further we study both as-grown and tip-induced domain structures and polarization switching in the beta-glycine molecular systems by Piezoresponse Force Microscopy (PFM) and compare the results with molecular modeling and computer simulations. We show that beta-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of applied voltage and pulse duration. The domain shape is dictated by both internal and external polarization screening mediated by defects and topographic features. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that beta-glycine is a uniaxial ferroelectric with the properties controlled by the charged domain walls which in turn can be manipulated by external bias. Besides, nonlinear optical properties of beta-glycine were investigated by a second harmonic generation (SHG) method. SHG method confirmed that the 2-fold symmetry is preserved in as-grown crystals, thus reflecting the expected P21 symmetry of the beta-phase. Spontaneous polarization direction is found to be parallel to the monoclinic [010] axis and directed along the crystal length. These data are confirmed by computational molecular modeling. Optical measurements revealed also relatively high values of the nonlinear optical susceptibility (50% greater than in the z-cut quartz). The potential of using stable beta-glycine crystals in various applications are discussed in this work.

Tunable short-wavelength spin wave excitation from pinned magnetic domain walls

PubMed Central

Van de Wiele, Ben; Hämäläinen, Sampo J.; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan

2016-01-01

Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors. PMID:26883893

Origin of dielectric relaxor behavior in PVDF-based copolymer and terpolymer films

NASA Astrophysics Data System (ADS)

Pramanick, Abhijit; Osti, Naresh C.; Jalarvo, Niina; Misture, Scott T.; Diallo, Souleymane Omar; Mamontov, Eugene; Luo, Y.; Keum, Jong-Kahk; Littrell, Ken

2018-04-01

Relaxor ferroelectrics exhibit frequency-dispersion of their dielectric permittivity peak as a function of temperature, the origin of which has been widely debated. Microscopic understanding of such behavior for polymeric ferroelectrics has presented new challenges since unlike traditional ceramic ferroelectrics, dielectric relaxation in polymers is a consequence of short-range molecular dynamics that are difficult to measure directly. Here, through careful analysis of atomic-level H-atom dynamics as determined by Quasi-elastic Neutron Scattering (QENS), we show that short-range molecular dynamics within crystalline domains cannot explain the macroscopic frequency-dispersion of dielectric properties observed in prototypical polyvinylidene-fluoride (PVDF)-based relaxor ferroelectrics. Instead, from multiscale quantitative microstructural characterization, a clear correlation between the amount of crystalline-amorphous interfaces and dielectric relaxation is observed, which indicates that such interfaces play a central role. These results provide critical insights into the role of atomic and microscopic structures towards relaxor behavior in ferroelectric polymers, which will be important for their future design.

Investigation of local ferroelectric and piezoelectric effects on mats of electrospun poly(vinylidene fluoride) (PVDF) fibers

NASA Astrophysics Data System (ADS)

Durgaprasad, P.; Hemalatha, J.

2018-04-01

Poly(vinylidene fluoride) (PVDF) fiber mat was synthesized by using electrospinning technique by using DMF/Acetone as mixed solvent. Structural and functional group studies were studied by using X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) spectroscopy respectively. The morphology of the fiber mat was investigated by using scanning electron microscopy (SEM) which revealed the formation of uniform fibers with an average diameter of 500nm. The local ferroelectric, piezo electric properties and also the domain switching of the fiber mats were investigated by Dynamic Contact Electrostatic Force Microscopy (DC-EFM) studies. The peizoelectric/ferroelectric response was recorded and analyzed.

Ferroelectric and magnetic properties of Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Tingting, E-mail: jia.tingting@nims.go.jp; Kimura, Hideo, E-mail: KIMURA.Hideo@nims.go.jp; Cheng, Zhenxiang

2015-11-15

Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} (m = 4, 5, 6) thin films have been deposited by a pulsed laser deposition system. The x-ray diffraction patterns indicate the formation of orthorhombic phase. The remanent polarization (2P{sub r}) of Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} thin films is decreased with the m-number. Positive-up-negative-down measurements indicate the presence of ferroelectric (FE) polarization in as-obtained thin films. Piezoresponse force microscopy investigations confirm the existence of FE domains and the switchable polarization. Weak magnetic moment is detected in the Aurivillius films at room temperature. The present work suggests the possibility of Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3}more » (m = 4, 5, 6) materials as potential room-temperature multiferroics.« less

Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor–ferroelectric ceramic composites

DOE PAGES

Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; ...

2016-01-05

Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. However, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. Here,more » we report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. These results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.« less

Ultrahigh energy density harvested from domain-engineered relaxor ferroelectric single crystals under high strain rate loading

NASA Astrophysics Data System (ADS)

Shkuratov, Sergey I.; Baird, Jason; Antipov, Vladimir G.; Talantsev, Evgueni F.; Chase, Jay B.; Hackenberger, Wesley; Luo, Jun; Jo, Hwan R.; Lynch, Christopher S.

2017-04-01

Relaxor ferroelectric single crystals have triggered revolution in electromechanical systems due to their superior piezoelectric properties. Here the results are reported on experimental studies of energy harvested from (1-y-x)Pb(In1/2Nb1/2)O3-(y)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PIN-PMN-PT) crystals under high strain rate loading. Precise control of ferroelectric properties through composition, size and crystallographic orientation of domains made it possible to identify single crystals that release up to three times more electric charge density than that produced by PbZr0.52Ti0.48O3 (PZT 52/48) and PbZr0.95Ti0.05O3 (PZT 95/5) ferroelectric ceramics under identical loading conditions. The obtained results indicate that PIN-PMN-PT crystals became completely depolarized under 3.9 GPa compression. It was found that the energy density generated in the crystals during depolarization in the high voltage mode is four times higher than that for PZT 52/48 and 95/5. The obtained results promise new single crystal applications in ultrahigh-power transducers that are capable of producing hundreds kilovolt pulses and gigawatt-peak power microwave radiation.

Phase transition hysteresis and anomalous Curie-Weiss behavior of ferroelectric tetragonal tungsten bronzes Ba2RETi2Nb3O15:RE=Nd,Sm

NASA Astrophysics Data System (ADS)

Prades, Marta; Beltrán, Héctor; Masó, Nahum; Cordoncillo, Eloisa; West, Anthony R.

2008-11-01

The ferroelectric tetragonal tungsten bronze (TTB) phases, Ba2RETi2Nb3O15:RE=Nd,Sm, were prepared by low temperature solvothermal synthesis. The permittivity versus temperature data of sintered ceramics show two unusual features: first, a hysteresis of 50-100 °C between values of the Curie temperature Tc on heat-cool cycles and second: a huge depression in the Curie-Weiss temperature T0. Both effects are attributed to the complex nature of their TTB-related crystal structures with different superstructures above and below Tc and the difficulty in nucleating ferroelectric domains on cooling through Tc. Several factors may contribute to the latter difficulty: first, the structures contain two sets of crystallographic sites for the "active" Ti, Nb ions; second, the distribution of Ti and Nb over these two sets of sites is not random but partially ordered; and third, below Tc a weak commensurate superstructure perpendicular to the polar c&barbelow; axis is present, but above Tc a weak incommensurate superstructure in a similar orientation is present. Hence the formation of the ferroelectric structure on cooling requires both nucleation of polar domains involving two sets of cation sites and structural change from an incommensurate to a commensurate supercell.

Emergent Low-Symmetry Phases and Large Property Enhancements in Ferroelectric KNbO 3 Bulk Crystals [Emergent Low-Symmetry Phases with Large Property Enhancement in Ferroelectric KNbO 3 Bulk Crystals

DOE PAGES

Lummen, Tom T. A.; Leung, J.; Kumar, Amit; ...

2017-06-19

The design of new or enhanced functionality in materials is traditionally viewed as requiring the discovery of new chemical compositions through synthesis. Large property enhancements may however also be hidden within already well-known materials, when their structural symmetry is deviated from equilibrium through a small local strain or field. Here, the discovery of enhanced material properties associated with a new metastable phase of monoclinic symmetry within bulk KNbO 3 is reported. This phase is found to coexist with the nominal orthorhombic phase at room temperature, and is both induced by and stabilized with local strains generated by a network ofmore » ferroelectric domain walls. While the local microstructural shear strain involved is only ≈0.017%, the concurrent symmetry reduction results in an optical second harmonic generation response that is over 550% higher at room temperature. Moreover, the meandering walls of the low-symmetry domains also exhibit enhanced electrical conductivity on the order of 1 S m -1. In conclusion, this discovery reveals a potential new route to local engineering of significant property enhancements and conductivity through symmetry lowering in ferroelectric crystals.« less

Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field.

PubMed

Karpov, D; Liu, Z; Rolo, T Dos Santos; Harder, R; Balachandran, P V; Xue, D; Lookman, T; Fohtung, E

2017-08-17

Topological defects of spontaneous polarization are extensively studied as templates for unique physical phenomena and in the design of reconfigurable electronic devices. Experimental investigations of the complex topologies of polarization have been limited to surface phenomena, which has restricted the probing of the dynamic volumetric domain morphology in operando. Here, we utilize Bragg coherent diffractive imaging of a single BaTiO 3 nanoparticle in a composite polymer/ferroelectric capacitor to study the behavior of a three-dimensional vortex formed due to competing interactions involving ferroelectric domains. Our investigation of the structural phase transitions under the influence of an external electric field shows a mobile vortex core exhibiting a reversible hysteretic transformation path. We also study the toroidal moment of the vortex under the action of the field. Our results open avenues for the study of the structure and evolution of polar vortices and other topological structures in operando in functional materials under cross field configurations.Imaging of topological states of matter such as vortex configurations has generally been limited to 2D surface effects. Here Karpov et al. study the volumetric structure and dynamics of a vortex core mediated by electric-field induced structural phase transition in a ferroelectric BaTiO 3 nanoparticle.

Ultrahigh energy density harvested from domain-engineered relaxor ferroelectric single crystals under high strain rate loading

PubMed Central

Shkuratov, Sergey I.; Baird, Jason; Antipov, Vladimir G.; Talantsev, Evgueni F.; Chase, Jay B.; Hackenberger, Wesley; Luo, Jun; Jo, Hwan R.; Lynch, Christopher S.

2017-01-01

Relaxor ferroelectric single crystals have triggered revolution in electromechanical systems due to their superior piezoelectric properties. Here the results are reported on experimental studies of energy harvested from (1-y-x)Pb(In1/2Nb1/2)O3–(y)Pb(Mg1/3Nb2/3)O3–(x)PbTiO3 (PIN-PMN-PT) crystals under high strain rate loading. Precise control of ferroelectric properties through composition, size and crystallographic orientation of domains made it possible to identify single crystals that release up to three times more electric charge density than that produced by PbZr0.52Ti0.48O3 (PZT 52/48) and PbZr0.95Ti0.05O3 (PZT 95/5) ferroelectric ceramics under identical loading conditions. The obtained results indicate that PIN-PMN-PT crystals became completely depolarized under 3.9 GPa compression. It was found that the energy density generated in the crystals during depolarization in the high voltage mode is four times higher than that for PZT 52/48 and 95/5. The obtained results promise new single crystal applications in ultrahigh-power transducers that are capable of producing hundreds kilovolt pulses and gigawatt-peak power microwave radiation. PMID:28440336

A phase field approach for the fully coupled thermo-electro-mechanical dynamics of nanoscale ferroelectric actuators

NASA Astrophysics Data System (ADS)

Wang, Dan; Du, Haoyuan; Wang, Linxiang; Melnik, Roderick

2018-05-01

The fully coupled thermo-electro-mechanical properties of nanoscale ferroelectric actuators are investigated by a phase field model. Firstly, the thermal effect is incorporated into the commonly-used phase field model for ferroelectric materials in a thermodynamic consistent way and the governing equation for the temperature field is derived. Afterwards, the modified model is numerically implemented to study a selected prototype of the ferroelectric actuators, where strain associated with electric field-induced non-180° domain switching is employed. The temperature variation and energy flow in the actuation process are presented, which enhances our understanding of the working mechanism of the actuators. Furthermore, the influences of the input voltage frequency and the thermal boundary condition on the temperature variation are demonstrated and carefully discussed in the context of thermal management for real applications.

Room Temperature Monoclinic Phase in BaTiO3 Single Crystals

NASA Astrophysics Data System (ADS)

Denev, Sava; Kumar, Amit; Barnes, Andrew; Vlahos, Eftihia; Shepard, Gabriella; Gopalan, Venkatraman

2010-03-01

BaTiO3 is a well studied ferroelectric material for the last half century. It is well known to show phase transitions to tetragonal, orthorhombic and rhombohedral phases upon cooling. Yet, some old and some recent studies have argued that all these phases co-exist with a second phase with monoclinic distortion. Using optical second harmonic generation (SHG) at room temperature we directly present evidence for such monoclininc phase co-existing with tetragonal phase at room temperature. We observe domains with the expected tetragonal symmetry exhibiting 90^o and 180^o domain walls. However, at points of higher stress at the tips of the interpenetrating tetragonal domains we observe a well pronounced metastable ``staircase pattern'' with a micron-scale fine structure. Polarization studies show that this phase can be explained only by monoclinic symmetry. This phase is very sensitive to external perturbations such as temperature and fields, hence stabilizing this phase at room temperature could lead to large properties' tunability.

Nanoscale characterization and local piezoelectric properties of lead-free KNN-LT-LS thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Choi, T.; Cheong, S.-W.; Safari, A.

2010-01-01

We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180° domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient (d33) of the films were calculated using piezoelectric displacement curves and shown to be ~53 pm V-1 for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.

Fatigue effect in ferroelectric crystals: Growth of the frozen domains

NASA Astrophysics Data System (ADS)

Shur, V. Ya.; Akhmatkhanov, A. R.; Baturin, I. S.

2012-06-01

The model of the fatigue effect during cyclic switching caused by growth of the frozen domain area with charged domain walls has been proposed. It was claimed on the basis of the previous experimental results that for switching in increasing field the frozen domain area started to grow at the given sub-threshold field value and stopped at the threshold field. The influence of the shape and frequency of the field pulses used for cyclic switching has been considered. The uniaxial ferroelectric stoichiometric lithium tantalate single crystals produced by vapor transport equilibration with record low value of coercive field have been chosen as a model material for experimental verification of the model. The formation of the charged domain walls as a result of cyclic switching has been revealed by analysis of the domain images obtained by optical and Raman confocal microscopy. It has been shown that the fatigue degree is equal to the fraction of the frozen domain area. The experimental dependence of the switched charge on the cycle number has been successfully fitted by modified Kolmogorov-Avrami formula. The experimentally observed frequency independence of fatigue profile for rectangular pulses and frequency dependence for triangular pulses has been explained by proposed model.

Gap-state engineering of visible-light-active ferroelectrics for photovoltaic applications.

PubMed

Matsuo, Hiroki; Noguchi, Yuji; Miyayama, Masaru

2017-08-08

Photoferroelectrics offer unique opportunities to explore light energy conversion based on their polarization-driven carrier separation and above-bandgap voltages. The problem associated with the wide bandgap of ferroelectric oxides, i.e., the vanishingly small photoresponse under visible light, has been overcome partly by bandgap tuning, but the narrowing of the bandgap is, in principle, accompanied by a substantial loss of ferroelectric polarization. In this article, we report an approach, 'gap-state' engineering, to produce photoferroelectrics, in which defect states within the bandgap act as a scaffold for photogeneration. Our first-principles calculations and single-domain thin-film experiments of BiFeO 3 demonstrate that gap states half-filled with electrons can enhance not only photocurrents but also photovoltages over a broad photon-energy range that is different from intermediate bands in present semiconductor-based solar cells. Our approach opens a promising route to the material design of visible-light-active ferroelectrics without sacrificing spontaneous polarization.Overcoming the optical transparency of wide bandgap of ferroelectric oxides by narrowing its bandgap tends to result in a loss of polarization. By utilizing defect states within the bandgap, Matsuo et al. report visible-light-active ferroelectrics without sacrificing polarization.

Type-II domains in ferroelectric gadolinium molybdate (in German)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohm, J.; Kuersten, H.D.

Etching (001)-faces of gadolinium molybdate (GMO) reveals new kinds of domains. They are created by a translation, that leaves the spontaneous polarization and the transition parameter invariant. The translation vector is a part of a lattice vector, similar to stacking faults. (auth)

Machine Detection of Enhanced Electromechanical Energy Conversion in PbZr 0.2Ti 0.8O 3 Thin Films

DOE PAGES

Agar, Joshua C.; Cao, Ye; Naul, Brett; ...

2018-05-28

Many energy conversion, sensing, and microelectronic applications based on ferroic materials are determined by the domain structure evolution under applied stimuli. New hyperspectral, multidimensional spectroscopic techniques now probe dynamic responses at relevant length and time scales to provide an understanding of how these nanoscale domain structures impact macroscopic properties. Such approaches, however, remain limited in use because of the difficulties that exist in extracting and visualizing scientific insights from these complex datasets. Using multidimensional band-excitation scanning probe spectroscopy and adapting tools from both computer vision and machine learning, an automated workflow is developed to featurize, detect, and classify signatures ofmore » ferroelectric/ferroelastic switching processes in complex ferroelectric domain structures. This approach enables the identification and nanoscale visualization of varied modes of response and a pathway to statistically meaningful quantification of the differences between those modes. Lastly, among other things, the importance of domain geometry is spatially visualized for enhancing nanoscale electromechanical energy conversion.« less

Machine Detection of Enhanced Electromechanical Energy Conversion in PbZr 0.2Ti 0.8O 3 Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agar, Joshua C.; Cao, Ye; Naul, Brett

Many energy conversion, sensing, and microelectronic applications based on ferroic materials are determined by the domain structure evolution under applied stimuli. New hyperspectral, multidimensional spectroscopic techniques now probe dynamic responses at relevant length and time scales to provide an understanding of how these nanoscale domain structures impact macroscopic properties. Such approaches, however, remain limited in use because of the difficulties that exist in extracting and visualizing scientific insights from these complex datasets. Using multidimensional band-excitation scanning probe spectroscopy and adapting tools from both computer vision and machine learning, an automated workflow is developed to featurize, detect, and classify signatures ofmore » ferroelectric/ferroelastic switching processes in complex ferroelectric domain structures. This approach enables the identification and nanoscale visualization of varied modes of response and a pathway to statistically meaningful quantification of the differences between those modes. Lastly, among other things, the importance of domain geometry is spatially visualized for enhancing nanoscale electromechanical energy conversion.« less

Ferroelectric Phase Transformations for Energy Conversion and Storage Applications

NASA Astrophysics Data System (ADS)

Jo, Hwan Ryul

Ferroelectric materials possess a spontaneous polarization and actively respond to external mechanical, electrical, and thermal loads. Due to their coupled behavior, ferroelectric materials are used in products such as sensors, actuators, detectors, and transducers. However, most current applications rely on low-energy conversion that involves low magnitude fields. They utilize the low-field linear properties of ferroelectric materials (piezoelectric, pyroelectric) and do not take full advantage of the large-field nonlinear behavior (irreversible domain wall motion, phase transformations) that can occur in ferroelectric materials. When external fields exceed a certain critical level, a structural transformation of the crystal can occur. These phase transformations are accompanied by a much larger response than the linear piezoelectric and pyroelectric responses, by as much as a multiple of ten times in the magnitude. This makes the non-linear behavior in ferroelectric materials promising for energy harvesting and energy storage technologies which will benefit from large-energy conversion. Yet, the ferroelectric phase transformation behavior under large external fields have been less studied and only a few studies have been directed at utilizing this large material response in applications. This dissertation addresses the development ferroelectric phase transformation-based applications, with particular focus on the materials. Development of the ferroelectric phase transformation-based applications was approached in several steps. First, the phase transformation behavior was fully characterized and understood by measuring the phase transformation responses under mechanical, electrical, thermal, and combined loads. Once the behavior was well characterized, systems level applications were addressed. This required assessing the effect of the phase transformation behavior on system performance. The performance of ferroelectric devices is strongly dependent on material properties and phase transformation behavior which can be tailored by modifying the chemical composition, processing conditions, and the loading history (poling). This results in optimization of system performance by tailoring material properties and phase transformation behavior. This approach applied to three ferroelectric phase transformation-based applications: 1. Ferroelectric energy generation 2. Ferroelectric high-energy storage capacitor 3. Ferroelectric thermal energy harvesting. This dissertation has addressed tuning the large field properties for phase transformation-based systems.

Shear-strain gradient induced polarization reversal in ferroelectric BaTiO3 thin films: A first-principles total-energy study

NASA Astrophysics Data System (ADS)

Li, Guannan; Huang, Xiaokun; Hu, Jingsan; Zhang, Weiyi

2017-04-01

Based on the first-principles total-energy calculation, we have studied the shear-strain gradient effect on the polarization reversal of ferroelectric BaTiO3 thin films. By calculating the energies of double-domain supercells for different electric polarization, shear-strain gradients, and domain-wall displacement, we extracted, in addition to the domain-wall energy, the polarization energy, elastic energy, and flexoelectric coefficient of a single domain. The constructed Landau-Devonshire phenomenological theory yields a critical shear-strain gradient of 9.091 ×107/m (or a curvature radius (R ) of 110 Å) for reversing the 180∘ domain at room temperature, which is on the same order of the experimentally estimated value of 3.333 ×107/m (R =300 Å ). In contrast to the commonly used linear response theory, the flexoelectric coefficient derived from fitting the total energy to a Landau-Devonshire energy functional does not depend on the specific pseudopotential. Thus, our method offers an alternative numerical approach to study the flexoelectric effect.

Super Stable Ferroelectrics with High Curie Point.

PubMed

Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

2016-04-07

Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

Super Stable Ferroelectrics with High Curie Point

PubMed Central

Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

2016-01-01

Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

Temperature evolution of the structural properties of monodomain ferroelectric thin film

NASA Astrophysics Data System (ADS)

Janolin, Pierre-Eymeric; Le Marrec, Françoise; Chevreul, Jacques; Dkhil, Brahim

2007-05-01

The structural evolution of epitaxial monodomain (only 180° domains) ferroelectric PbTiO3 thin film has been investigated, using high-resolution, temperature-dependent, x-ray diffraction. The full set of lattice parameters was obtained from room temperature up to 850K. It allowed the calculation of the different strains stored in the film at room temperature, underlying the difference between the mechanical strain and the misfit strain. The evolution of the misfit strain as a function of temperature was also calculated and was found to be consistent with the theoretical temperature-misfit strain phase diagram. These data strongly suggest that the film remains ferroelectric and tetragonal up to 940K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-Omore » bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.« less

Residual ferroelectricity in barium strontium titanate thin film tunable dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garten, L. M., E-mail: lmg309@psu.edu; Trolier-McKinstry, S.; Lam, P.

2014-07-28

Loss reduction is critical to develop Ba{sub 1−x}Sr{sub x}TiO{sub 3} thin film tunable microwave dielectric components and dielectric energy storage devices. The presence of ferroelectricity, and hence the domain wall contributions to dielectric loss, will degrade the tunable performance in the microwave region. In this work, residual ferroelectricity—a persistent ferroelectric response above the global phase transition temperature—was characterized in tunable dielectrics using Rayleigh analysis. Chemical solution deposited Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films, with relative tunabilities of 86% over 250 kV/cm at 100 kHz, demonstrated residual ferroelectricity 65 °C above the ostensible paraelectric transition temperature. Frequency dispersion observed in the dielectric temperature response wasmore » consistent with the presence of nanopolar regions as one source of residual ferroelectricity. The application of AC electric field for the Rayleigh analysis of these samples led to a doubling of the dielectric loss for fields over 10 kV/cm at room temperature.« less

Demonstration of ultra-high recyclable energy densities in domain-engineered ferroelectric films.

PubMed

Cheng, Hongbo; Ouyang, Jun; Zhang, Yun-Xiang; Ascienzo, David; Li, Yao; Zhao, Yu-Yao; Ren, Yuhang

2017-12-08

Dielectric capacitors have the highest charge/discharge speed among all electrical energy devices, but lag behind in energy density. Here we report dielectric ultracapacitors based on ferroelectric films of Ba(Zr 0.2 ,Ti 0.8 )O 3 which display high-energy densities (up to 166 J cm -3 ) and efficiencies (up to 96%). Different from a typical ferroelectric whose electric polarization is easily saturated, these Ba(Zr 0.2 ,Ti 0.8 )O 3 films display a much delayed saturation of the electric polarization, which increases continuously from nearly zero at remnant in a multipolar state, to a large value under the maximum electric field, leading to drastically improved recyclable energy densities. This is achieved by the creation of an adaptive nano-domain structure in these perovskite films via phase engineering and strain tuning. The lead-free Ba(Zr 0.2 ,Ti 0.8 )O 3 films also show excellent dielectric and energy storage performance over a broad frequency and temperature range. These findings may enable broader applications of dielectric capacitors in energy storage, conditioning, and conversion.

Targeted Basic Studies of Ferroelectric and Ferroelastic Materials for Piezoelectric Transducer Applications.

DTIC Science & Technology

1983-03-01

PLZT ceramics. Low temperature studies on pure and doped PZTs have given the first clear indi- cation of the intrinsic (averaged) single domain...8217 11 4.0 PYROELECTRIC MATERIALS 27 4.1 Micro Composites 27 4.2 ’ Doped ’ Tungsten Bronze and TGS Structure Single Crystals 28 5.0 FERROELECTRIC...differences in piezo- electric activity, coupling constant and permittivity between differently doped PZTs are extrinsic and freeze out at 4°K. Extending

Elastic Properties and Enhanced Piezoelectric Response at Morphotropic Phase Boundaries

PubMed Central

Cordero, Francesco

2015-01-01

The search for improved piezoelectric materials is based on the morphotropic phase boundaries (MPB) between ferroelectric phases with different crystal symmetry and available directions for the spontaneous polarization. Such regions of the composition x−T phase diagrams provide the conditions for minimal anisotropy with respect to the direction of the polarization, so that the polarization can easily rotate maintaining a substantial magnitude, while the near verticality of the TMPBx boundary extends the temperature range of the resulting enhanced piezoelectricity. Another consequence of the quasi-isotropy of the free energy is a reduction of the domain walls energies, with consequent formation of domain structures down to nanoscale. Disentangling the extrinsic and intrinsic contributions to the piezoelectricity in such conditions requires a high level of sophistication from the techniques and analyses for studying the structural, ferroelectric and dielectric properties. The elastic characterization is extremely useful in clarifying the phenomenology and mechanisms related to ferroelectric MPBs. The relationship between dielectric, elastic and piezoelectric responses is introduced in terms of relaxation of defects with electric dipole and elastic quadrupole, and extended to the response near phase transitions in the framework of the Landau theory. An account is provided of the anelastic experiments, from torsional pendulum to Brillouin scattering, that provided new important information on ferroelectric MPBs, including PZT, PMN-PT, NBT-BT, BCTZ, and KNN-based systems. PMID:28793707

Analytical Study on the Saturated Polarization Under Electric Field and Phase Equilibrium of Three-Phase Polycrystalline Ferroelectrics by Using the Generalized Inverse-Pole-Figure Model

NASA Astrophysics Data System (ADS)

Ju, Kyong-Sik; Ryo, Hyok-Su; Pak, Sung-Nam; Pak, Chang-Su; Ri, Sung-Guk; Ri, Dok-Hwan

2018-07-01

By using the generalized inverse-pole-figure model, the numbers of crystalline particles involved in different domain-switching near the triple tetragonal-rhombohedral-orthorhombic (T-R-O) points of three-phase polycrystalline ferroelectrics have been analytically calculated and domain-switching which can bring out phase transformations has been considered. Through polarization by an electric field, different numbers of crystalline particles can be involved in different phase transformations. According to the phase equilibrium conditions, the phase equilibrium compositions of the three phases coexisting near the T-R-O triple point have been evaluated from the results of the numbers of crystalline particles involved in different phase transformations.

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

2018-02-01

We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

Surface topography and crystal and domain structures of films of ferroelectric copolymer of vinylidene difluoride and trifluoroethylene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kochervinskii, V. V., E-mail: kochval@mail.ru; Kiselev, D. A.; Malinkovich, M. D.

2017-03-15

The crystallization of a copolymer from a solution at room temperature is found to lead to the formation of a metastable structure, characterized by the coexistence of ferroelectric and paraelectric phases. The fraction of the latter decreases after annealing above the Curie point. Atomic force microscopy (AFM) has revealed a difference in the surface topographies between the films contacting with air and the films contacting with a glass substrate. The microstructure of copolymer chains has been investigated by {sup 19}F NMR spectroscopy. The chain fragments with “defect” attached monomeric units are ejected to the surface. The character of the ferroelectricmore » domains formed during crystallization and their size distribution are analyzed.« less

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

PubMed

Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

2013-11-28

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and other applications.

Local twin domains and tip-voltage-induced domain switching of monoclinic M C phase in Pb ( M g 1 / 3 N b 2 / 3 ) O 3 - 0.34 PbTi O 3 single crystal revealed by piezoresponse force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ruixue; Yang, Bin; Luo, Zhenlin

2016-08-29

Here, the monoclinic (M) phases in high-performance relaxor-based ferroelectric single crystals have been recognized to be a vital structural factor for the outstanding piezoelectric property. However, due to the complexity of the structure in M phases, the understanding about it is still limited. In this paper, the local twin domains and tip-voltage-induced domain switching of the M C phase in Pb(Mg 1/3Nb 2/3)O 3 - 0.34PbTiO 3 (PMN-0.34PT) single crystal have been intensively investigated by piezoresponse force microscopy (PFM). By theoretically analyzing the experimental patterns of domain walls on the (001) C face, the specific M C twin domains inmore » the initial annealed state of a selected area have been clarified, and the polarization orientation of the M C phase in this sample is determined to be at an angle of 29 degrees to the < 001 > C directions. In addition, based on the evolution of domains and the motion of domain walls under the step-increased PFM tip dc voltage (V dc), the switching process and features of different types of M C domain variants are visually revealed« less

Structure-property relations in sputter deposited epitaxial (1-x)Pb(Mg1/3Nb2/3)O3- xPbTiO3 thin films

NASA Astrophysics Data System (ADS)

Frederick, Joshua C.

Lead-based ferroelectric materials are of significant technological importance for sensing and actuation due to their high piezoelectric performance (i.e., the ability to convert an electrical signal to mechanical displacement, and vice versa). Traditionally, bulk ceramic or single crystals materials have filled these roles; however, emerging technologies stand to benefit by incorporating thin films to achieve miniaturization while maintaining high efficiency and sensitivity. Currently, chemical systems that have been well characterized in bulk form (e.g. Pb(Mg1/3Nb2/3)O3- xPbTiO3, or PMN-xPT) require further study to optimize both the chemistry and structure for deployment in thin film devices. Furthermore, the effect of internal electric fields is more significant at the length scales of thin films, resulting in self biases that require compensation to reveal their intrinsic dielectric response. To this end, the structure-property relations of epitaxial PMN-xPT films sputter deposited on a variety of substrates were investigated. Attention was paid to how the structure (i.e., strain state, crystal structure, domain configuration, and defects) gave rise to the ferroelectric, dielectric, and piezoelectric response. Three-dimensional visualization of the dielectric response as a simultaneous function of electric field and temperature revealed the true phase transition of the films, which was found to correspond to the strain state and defect concentration. A lead-buffered anneal process was implemented to enhance the ferroelectric and dielectric response of the films without altering their stoichiometry. It was discovered that PMN- xPT films could be domain-engineered to exhibit a mixed domain state through chemistry and substrate choice. Such films exhibited a monoclinic distortion similar to that of the bulk compositions near the morphotropic phase boundary. Finally, it was revealed that the piezoelectric response could be greatly enhanced by declamping the film from the substrate via a membrane fabrication technique. The membrane structures exhibited enhanced domain wall mobility, suggesting that domain wall motion is crucial for strong piezoelectric performance in PMN-xPT films. The findings can help guide strain- and domain-engineered relaxor ferroelectric thin films tailored for particular applications.

Measurement of Ferroelectric Films in MFM and MFIS Structures

NASA Astrophysics Data System (ADS)

Anderson, Jackson D.

For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling issues. With the renewed interest in these devices due to the recent discovery of ferroelectricity in HfO2, it is imperative that the properties of these films are well understood. To aid that end, a ferroelectric analysis package has been developed and released on GitHub and PyPI under a creative commons non-commercial share-alike license. This package contains functions for visualization and analysis of data from polarization, leakage current, and FORC measurements as well as basic modeling capability. Functionality is verified via the analysis of lead zirconate titanate (PZT) capacitors, where a multi-domain simulation based on an experimental Preisach density shows decent agreement despite measurement noise. The package is then used in the analysis of ferroelectric HfO2 films deposited in metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) stacks. 13.5 nm HfO2 films deposited on a semiconductor surface are shown to have a coercive voltage of 2.5 V, rather than the 1.9 V of the film in an MFM stack. This value further increases to 3-5 V when a lightly doped semiconductor depletion and inversion capacitance is added to the stack. The magnitude of this change is more than can be accounted for from the 10% voltage drop across the interfacial oxide layer, indicating that the modified surface properties are impacting the formation of the ferroelectric phase during anneal. In light of this, care should be taken to map out ferroelectric HfO2 properties using the particular physical stack that will be used, rather than using an MFM stack as a proxy.

Simultaneous Stress and Field Control of Sustainable Switching of Ferroelectric Phases

PubMed Central

Finkel, P.; Staruch, M.; Amin, A.; Ahart, M.; Lofland, S.E.

2015-01-01

In ferroelectrics, manifestation of a strong electromechanical coupling is attributed to both engineered domain morphology and phase transformations. However, realization of large sustainable and reversible strains and polarization rotation has been limited by fatigue, nonlinearity and hysteresis losses. Here, we demonstrate that large strain and polarization rotation can be generated for over 40 × 106 cycles with little fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cut Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal. Direct tuning of this effect through combination of stress and applied electric field, confirmed both macroscopically and microscopically with x-ray and Raman scattering, reveals the local symmetry while sweeping through the transition with a low applied electric field (<0.2 MV/m) under mechanical stress. The observed change in local symmetry as determined by x-ray scattering confirms a proposed polarization rotation mechanism corresponding to a transition between rhombohedral and orthorhombic phases. These results shed more light onto the nature of this reversible transformation between two ferroelectric phases and advance towards the development of a wide range of ferroic and multiferroic devices. PMID:26345729

Evidence of monotropic hexatic tilted smectic phase in the phase sequence of ferroelectric liquid crystal

NASA Astrophysics Data System (ADS)

Różycka, Anna; Deptuch, Aleksandra; Jaworska-Gołąb, Teresa; Węgłowska, Dorota; Marzec, Monika

2018-02-01

Physical properties of a new ferroelectric liquid crystal have been studied by complementary methods: differential scanning calorimetry, polarizing optical microscopy, dielectric and X-ray diffraction. It was found that next to enantiotropic ferroelectric smectic C* phase, the monotropic smectic phase appears at cooling. X-ray diffraction measurements allowed to identify this phase as hexatic tilted smectic. Temperature dependence of spontaneous polarization, tilt angle of molecules and switching time were found in both liquid crystalline phases at cooling. Based on the dielectric results, the dielectric processes were identified as Goldstone mode in the smectic C* phase, whereas as the bond-orientation-like phason and the bulk domain mode in the monotropic hexatic tilted smectic phase.

Critical temperatures of 70%Pb(Mg1/3Nb2/3)O3-30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements

NASA Astrophysics Data System (ADS)

Meng, X. J.; Rémiens, D.; Detalle, M.; Dkhil, B.; Sun, J. L.; Chu, J. H.

2007-03-01

The authors have investigated the temperature dependence of the ferroelectric, dielectric, and structural properties of 70%Pb(Mg1/3Nb2/3)O3-30%PbTiO3 thin films. Two critical temperatures were evidenced. The first one occurring around 410K corresponds to the bulk paraelectric-ferroelectric phase transition and the second one around 200K is rather related to a self-arrangement of small domains into macrodomains in order to minimize elastic energies. A multiscale domainlike structure is induced and the temperature evolution of such complex structure can be revealed through pronounced changes occurring in the nonlinear dielectric susceptibility.

Non-resonant electromechanical energy harvesting using inter-ferroelectric phase transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pérez Moyet, Richard; Rossetti, George A., E-mail: george.rossetti-jr@uconn.edu; Stace, Joseph

Non-resonant electromechanical energy harvesting is demonstrated under low frequency excitation (<50 Hz) using [110]{sub C}-poled lead indium niobate-lead magnesium niobate-lead titanate relaxor ferroelectric single crystals with compositions near the morphotropic phase boundary. The efficiency of power generation at the stress-induced phase transition between domain-engineered rhombohedral and orthorhombic ferroelectric states is as much as four times greater than is obtained in the linear piezoelectric regime under identical measurement conditions but during loading below the coercive stress of the phase change. The phase transition mode of electromechanical transduction holds potential for non-resonant energy harvesting from low-frequency vibrations and does not require mechanical frequencymore » up-conversion.« less

Evaluation of domain randomness in periodically poled lithium niobate by diffraction noise measurement.

PubMed

Dwivedi, Prashant Povel; Choi, Hee Joo; Kim, Byoung Joo; Cha, Myoungsik

2013-12-16

Random duty-cycle errors (RDE) in ferroelectric quasi-phase-matching (QPM) devices not only affect the frequency conversion efficiency, but also generate non-phase-matched parasitic noise that can be detrimental to some applications. We demonstrate an accurate but simple method for measuring the RDE in periodically poled lithium niobate. Due to the equivalence between the undepleted harmonic generation spectrum and the diffraction pattern from the QPM grating, we employed linear diffraction measurement which is much simpler than tunable harmonic generation experiments [J. S. Pelc, et al., Opt. Lett.36, 864-866 (2011)]. As a result, we could relate the RDE for the QPM device to the relative noise intensity between the diffraction orders.

Patterned Ferroelectric Films for Tunable Microwave Devices

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Mueller, Carl H.

2008-01-01

Tunable microwave devices based on metal terminals connected by thin ferroelectric films can be made to perform better by patterning the films to include suitably dimensioned, positioned, and oriented constrictions. The patterns can be formed during fabrication by means of selective etching processes. If the width of the ferroelectric film in such a device is reduced at one or more locations, then both the microwave field and any applied DC bias (tuning) electric field become concentrated at those locations. The magnitudes of both the permittivity and the dielectric loss of a ferroelectric material are reduced by application of a DC field. Because the concentration of the DC field in the constriction(s) magnifies the permittivity- and loss-reducing effects of the applied DC voltage, the permittivity and dielectric loss in the constriction(s) are smaller in the constriction(s) than they are in the wider parts of the ferroelectric film. Furthermore, inasmuch as displacement current must flow through either the constriction(s) or the low-loss dielectric substrate, the net effect of the constriction(s) is equivalent to that of incorporating one or more low-loss, low-permittivity region(s) in series with the high-loss, high-permittivity regions. In a series circuit, the properties of the low-capacitance series element (in this case, the constriction) dominate the overall performance. Concomitantly, the capacitance between the metal terminals is reduced. By making the capacitance between the metal terminals small but tunable, a constriction increases the upper limit of the frequency range amenable to ferroelectric tuning. The present patterning concept is expected to be most advantageous for devices and circuits that must operate at frequencies from about 4 to about 60 GHz. A constriction can be designed such that the magnitude of the microwave electric field and the effective width of the region occupied by the microwave electric field become functions of the applied DC electric field, so that tunability is enhanced. It should even be possible to design the constriction to obtain a specific tuning-versus-voltage profile.

Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics.

PubMed

Zheng, Yue; Chen, W J

2017-08-01

Topological defects in condensed matter are attracting e significant attention due to their important role in phase transition and their fascinating characteristics. Among the various types of matter, ferroics which possess a switchable physical characteristic and form domain structure are ideal systems to form topological defects. In particular, a special class of topological defects-vortices-have been found to commonly exist in ferroics. They often manifest themselves as singular regions where domains merge in large systems, or stabilize as novel order states instead of forming domain structures in small enough systems. Understanding the characteristics and controllability of vortices in ferroics can provide us with deeper insight into the phase transition of condensed matter and also exciting opportunities in designing novel functional devices such as nano-memories, sensors, and transducers based on topological defects. In this review, we summarize the recent experimental and theoretical progress in ferroic vortices, with emphasis on those spin/dipole vortices formed in nanoscale ferromagnetics and ferroelectrics, and those structural domain vortices formed in multiferroic hexagonal manganites. We begin with an overview of this field. The fundamental concepts of ferroic vortices, followed by the theoretical simulation and experimental methods to explore ferroic vortices, are then introduced. The various characteristics of vortices (e.g. formation mechanisms, static/dynamic features, and electronic properties) and their controllability (e.g. by size, geometry, external thermal, electrical, magnetic, or mechanical fields) in ferromagnetics, ferroelectrics, and multiferroics are discussed in detail in individual sections. Finally, we conclude this review with an outlook on this rapidly developing field.

Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics

NASA Astrophysics Data System (ADS)

Zheng, Yue; Chen, W. J.

2017-08-01

Topological defects in condensed matter are attracting e significant attention due to their important role in phase transition and their fascinating characteristics. Among the various types of matter, ferroics which possess a switchable physical characteristic and form domain structure are ideal systems to form topological defects. In particular, a special class of topological defects—vortices—have been found to commonly exist in ferroics. They often manifest themselves as singular regions where domains merge in large systems, or stabilize as novel order states instead of forming domain structures in small enough systems. Understanding the characteristics and controllability of vortices in ferroics can provide us with deeper insight into the phase transition of condensed matter and also exciting opportunities in designing novel functional devices such as nano-memories, sensors, and transducers based on topological defects. In this review, we summarize the recent experimental and theoretical progress in ferroic vortices, with emphasis on those spin/dipole vortices formed in nanoscale ferromagnetics and ferroelectrics, and those structural domain vortices formed in multiferroic hexagonal manganites. We begin with an overview of this field. The fundamental concepts of ferroic vortices, followed by the theoretical simulation and experimental methods to explore ferroic vortices, are then introduced. The various characteristics of vortices (e.g. formation mechanisms, static/dynamic features, and electronic properties) and their controllability (e.g. by size, geometry, external thermal, electrical, magnetic, or mechanical fields) in ferromagnetics, ferroelectrics, and multiferroics are discussed in detail in individual sections. Finally, we conclude this review with an outlook on this rapidly developing field.

Low-energy Structural Dynamics of Multiferroic Domain Walls in Hexagonal Rare-earth Manganites

NASA Astrophysics Data System (ADS)

Wu, Xiaoyu; Petralanda, Urko; Zheng, Lu; Ren, Yuan; Hu, Rongwei; Cheong, Sang-Wook; Artyukhin, Sergey; Lai, Keji

Multiferroic domain walls (DWs), the natural interfaces between domains with different order parameters, usually exhibit unconventional functionalities. For instance, recent discovery of the ferroelectric DW conduction highlights its extraordinary electronic structure that is absent in bulk domains. The structural dynamics of individual DWs in the microwave regime, however, have not been fully explored due to the lack of spatially resolved studies. Here, we report the broadband (106-1010 Hz) scanning impedance microscopy results on the interlocked anti-phase boundaries and ferroelectric DWs in hexagonal rare-earth manganites. Surprisingly, the effective conductivity of the (001) DWs displays a 106-fold increase from dc to GHz frequencies, while the effect is absent on surfaces with in-plane polarized domains. First-principles and model calculations indicate that the frequency range and selection rules are consistent with the periodic sliding of the DW around its equilibrium position. This DW acoustic-wave-like mode, which is associated with the synchronized oscillation of local polarization and apical oxygen atoms, is localized perpendicular to the DW but free to propagate along the DW plane. Our results break the ground to understand structural DW dynamics and exploit new interfacial phenomena for novel devices.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

NASA Astrophysics Data System (ADS)

Xiao, Jun; Zhu, Hanyu; Wang, Ying; Feng, Wei; Hu, Yunxia; Dasgupta, Arvind; Han, Yimo; Wang, Yuan; Muller, David A.; Martin, Lane W.; Hu, PingAn; Zhang, Xiang

2018-06-01

Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In2Se3 crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature (˜700 K ) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.

Above-room-temperature ferroelectricity and antiferroelectricity in benzimidazoles

NASA Astrophysics Data System (ADS)

Horiuchi, Sachio; Kagawa, Fumitaka; Hatahara, Kensuke; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Tokura, Yoshinori

2012-12-01

The imidazole unit is chemically stable and ubiquitous in biological systems; its proton donor and acceptor moieties easily bind molecules into a dipolar chain. Here we demonstrate that chains of these amphoteric molecules can often be bistable in electric polarity and electrically switchable, even in the crystalline state, through proton tautomerization. Polarization-electric field (P-E) hysteresis experiments reveal a high electric polarization ranging from 5 to 10 μC cm-2 at room temperature. Of these molecules, 2-methylbenzimidazole allows ferroelectric switching in two dimensions due to its pseudo-tetragonal crystal symmetry. The ferroelectricity is also thermally robust up to 400 K, as is that of 5,6-dichloro-2-methylbenzimidazole (up to ~373 K). In contrast, three other benzimidazoles exhibit double P-E hysteresis curves characteristic of antiferroelectricity. The diversity of imidazole substituents is likely to stimulate a systematic exploration of various structure-property relationships and domain engineering in the quest for lead- and rare-metal-free ferroelectric devices.

High-throughput growth temperature optimization of ferroelectric SrxBa1-xNb2O6 epitaxial thin films using a temperature gradient method

NASA Astrophysics Data System (ADS)

Ohkubo, I.; Christen, H. M.; Kalinin, Sergei V.; Jellison, G. E.; Rouleau, C. M.; Lowndes, D. H.

2004-02-01

We have developed a multisample film growth method on a temperature-gradient substrate holder to quickly optimize the film growth temperature in pulsed-laser deposition. A smooth temperature gradient is achieved, covering a range of temperatures from 200 to 830 °C. In a single growth run, the optimal growth temperature for SrxBa1-xNb2O6 thin films on MgO(001) substrates was determined to be 750 °C, based on results from ellipsometry and piezoresponse force microscopy. Variations in optical properties and ferroelectric domains structures were clearly observed as function of growth temperature, and these physical properties can be related to their different crystalline quality. Piezoresponse force microscopy indicated the formation of uniform ferroelectric film for deposition temperatures above 750 °C. At 660 °C, isolated micron-sized ferroelectric islands were observed, while samples deposited below 550 °C did not exhibit clear piezoelectric contrast.

Terahertz dielectric response of ferroelectric Ba(x)Sr(1-x)TiO3 thin films.

PubMed

Kang, Seung Beom; Kwak, Min Hwan; Choi, Muhan; Kim, Sungil; Kim, Taeyong; Cha, Eun Jong; Kang, Kwang Yong

2011-11-01

Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films varies with the films compositions. Among the compositions of Ba(x)Sr(1-x)TiO(3) films with different Ba/Sr ratios, Ba(0.6)Sr(0.4)TiO(3) has the highest dielectric constants and the shortest dielectric relaxation time.

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes.

PubMed

Zhou, Yu; Wu, Di; Zhu, Yihan; Cho, Yujin; He, Qing; Yang, Xiao; Herrera, Kevin; Chu, Zhaodong; Han, Yu; Downer, Michael C; Peng, Hailin; Lai, Keji

2017-09-13

Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In 2 Se 3 nanoflakes. The noncentrosymmetric R3m symmetry of the α-In 2 Se 3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In 2 Se 3 nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In 2 Se 3 , one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Chemical state evolution in ferroelectric films during tip-induced polarization and electroresistive switching

DOE PAGES

Ievlev, Anton V.; Maksymovych, Petro; Trassin, Morgan; ...

2016-10-11

Domain formation and ferroelectric switching is fundamentally inseparable from polarization screening, which on free surfaces can be realized via band bending and ionic adsorption. In the latter case, polarization switching is intrinsically coupled to the surface electrochemical phenomena, and the electrochemical stage can control kinetics and induce long-range interactions. However, despite extensive evidence towards the critical role of surface electrochemistry, little is known about the nature of the associated processes. Here we combine SPM tip induce polarization switching and secondary ion mass spectrometry to explore the evolution of chemical state of ferroelectric during switching. Surprisingly, we find that even pristinemore » surfaces contain ions (e.g. Cl -) that are not anticipated based on chemistry of the system and processing. In the ferroelectric switching regime, we find surprising changes in surface chemistry, including redistribution of base cations. Finally, at higher voltages in the electroforming regime significant surface deformation was observed and associated with a strong ion intermixing.« less

Ferroelectrics under the Synchrotron Light: A Review.

PubMed

Fuentes-Cobas, Luis E; Montero-Cabrera, María E; Pardo, Lorena; Fuentes-Montero, Luis

2015-12-30

Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO₃ perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure-function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor

NASA Astrophysics Data System (ADS)

Chen, Y. Q.; Xu, X. B.; Lei, Z. F.; Y Liao, X.; Wang, X.; Zeng, C.; En, Y. F.; Huang, Y.

2015-01-01

A metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-semiconductor capacitor was fabricated, and the temperature dependence of its electrical properties was investigated. Within the temperature range of 300-220 K, the maximum memory window is up to 1.26 V, and it could be attributed to a higher coercive field of the ferroelectric film at a lower temperature, which is induced by the deeper and more box-shaped potential well based on the defect-domain interaction model. The memory window decreases with increasing temperature from 300 to 400 K, and the larger sweep voltage leads to a smaller memory window at a higher temperature, which could be attributed to temperature-dependent polarization of the ferroelectric film and charge injection from an Si substrate of the capacitor. With the temperature increasing from 220 to 400 K, the leakage current density increases with temperature by about one order, and the corresponding conduction mechanism is discussed. The results could provide useful guidelines for design and application of ferroelectric memory.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com; Chaudhuri, Arka

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, whichmore » demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.« less

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katayama, Kiliha; Shimizu, Takao; Sakata, Osami

2016-04-07

Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectricmore » films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.« less

Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

DOE PAGES

Han, Myung-Geun; Garlow, Joseph A.; Bugnet, Matthieu; ...

2016-09-02

Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr 0.2Ti 0.8O 3 are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated withmore » vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties.« less

Tetragonal CH3NH3PbI3 is ferroelectric

PubMed Central

Bar-Elli, Omri; Meirzadeh, Elena; Kaslasi, Hadar; Peleg, Yagel; Hodes, Gary; Lubomirsky, Igor; Oron, Dan; Ehre, David; Cahen, David

2017-01-01

Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy conversion by showing remarkable performance of solar cells made with HaPs, especially tetragonal methylammonium lead triiodide (MAPbI3). In particular, the low voltage loss of these cells implies a remarkably low recombination rate of photogenerated carriers. It was suggested that low recombination can be due to the spatial separation of electrons and holes, a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires clear experimental evidence. As a first step, we show that, in operando, MAPbI3 (unlike MAPbBr3) is pyroelectric, which implies it can be ferroelectric. The next step, proving it is (not) ferroelectric, is challenging, because of the material’s relatively high electrical conductance (a consequence of an optical band gap suitable for PV conversion) and low stability under high applied bias voltage. This excludes normal measurements of a ferroelectric hysteresis loop, to prove ferroelectricity’s hallmark switchable polarization. By adopting an approach suitable for electrically leaky materials as MAPbI3, we show here ferroelectric hysteresis from well-characterized single crystals at low temperature (still within the tetragonal phase, which is stable at room temperature). By chemical etching, we also can image the structural fingerprint for ferroelectricity, polar domains, periodically stacked along the polar axis of the crystal, which, as predicted by theory, scale with the overall crystal size. We also succeeded in detecting clear second harmonic generation, direct evidence for the material’s noncentrosymmetry. We note that the material’s ferroelectric nature, can, but need not be important in a PV cell at room temperature. PMID:28588141

Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics

DOE PAGES

Zhang, Zhuolei; Li, Peng-Fei; Tang, Yuan-Yuan; ...

2017-08-30

Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO4 thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (more » $$2,\\overline{1},0$$) and ($$1,0,\\overline{2}$$) structural variants of R3m symmetry with a reversible polarization of 6.7 μC/cm 2. The resulting ferroelectric domain structure leads to a reversible electromechanical response of d 33 = 38.8 pm/V. Polarization switching results in a change of the refractive index, n, of single domains, $$\\frac{Δn}{n}$$ = 0.3. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.« less

Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics

PubMed Central

Zhang, Zhuolei; Li, Peng-Fei; Tang, Yuan-Yuan; Wilson, Andrew J.; Willets, Katherine; Wuttig, Manfred; Xiong, Ren-Gen; Ren, Shenqiang

2017-01-01

Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO4 thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2,1¯,0) and (1,0,2¯) structural variants of R3m symmetry with a reversible polarization of 6.7 μC/cm2. The resulting ferroelectric domain structure leads to a reversible electromechanical response of d33 = 38.8 pm/V. Polarization switching results in a change of the refractive index, n, of single domains, Δnn=0.3. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies. PMID:28875167

Room Temperature Ferroelectricity in Ultrathin SnTe Films

NASA Astrophysics Data System (ADS)

Chang, Kai; Liu, Junwei; Lin, Haicheng; Zhao, Kun; Zhong, Yong; Ji, Shuai-Hua; He, Ke; Wang, Lili; Ma, Xucun; Fu, Liang; Chen, Xi; Xue, Qi-Kun

2015-03-01

The ultrathin SnTe films with several unit cell thickness grown on graphitized SiC(0001) surface have been studied by the scanning tunneling microscopy and spectroscopy (STM/S). The domain structures, local lattice distortion and the electronic band bending at film edges induced by the in-plane spontaneous polarization along < 110 > have been revealed at atomic scale. The experiments at variant temperature show that the Curie temperature Tc of the one unit cell thick (two atomic layers) SnTe film is as high as 280K, much higher than that of the bulk counterpart (~100K) and the 2-4 unit cell thick films even indicate robust ferroelectricity at room temperature. This Tc enhancement is attributed to the stress-free interface, larger electronic band gap and greatly reduced Sn vacancy concentration in the ultrathin films. The lateral domain size varies from several tens to several hundreds of nanometers, and the spontaneous polarization direction could be modified by STM tip. Those properties of ultrathin SnTe films show the potential application on ferroelectric devices. The work was financially supported by Ministry of Science and Technology of China, National Science Foundation and Ministry of Education of China.

Effects of configurational changes on molecular dynamics in polyvinylidene fluoride and poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers

DOE PAGES

Jalarvo, N.; Pramanick, A.; Do, C.; ...

2015-08-28

Here, we present a comparative study of proton dynamics in unpoled non-ferroelectric polymer polyvinylidene fluoride (PVDF) and in its trifluoroethylene containing ferroelectric copolymer (with 70/30 molar proportion), using quasi-elastic neutron scattering. The neutron data reveal the existence of two distinct types of molecular motions in the temperature range investigated. Moreover, the slower motion, which is characterized in details here, is ascribed to protons jump diffusion along the polymeric carbon chains, while the faster motion could be attributed to localized rotational motion of methylene groups. At temperatures below the Curie point (T-c similar to 385 K) of the composite polymer, themore » slower diffusive mode experiences longer relaxation times in the ferroelectric blend than in the bare PVDF, although the net corresponding diffusion coefficient remains comparatively the same in both polymers with characteristic activation energy of E-A approximate to 27-33 kJ/mol. This arises because of a temperature dependent jump length r(0), which we observe to be effectively longer in the copolymer, possibly due to the formation of ordered ferroelectric domains below Tc. Above Tc, there is no appreciable difference in r(0) between the two systems. Our observation directly relates the known dependence of Tc on molar ratio to changes in r(0), providing fundamental insight into the ferroelectric properties of PVDF-based copolymers.« less

Tailoring Electronic Properties in Semiconducting Perovskite Materials through Octahedral Control

NASA Astrophysics Data System (ADS)

Choquette, Amber K.

Perovskite oxides, which take the chemical formula ABO 3, are a very versatile and interesting materials family, exhibiting properties that include ferroelectricity, ferromagnetism, mixed ionic/electronic conductivity, metal-insulator behavior and multiferroicity. Key to these functionalities is the network of BO6 corner-connected octahedra, which are known to distort and rotate, directly altering electronic and ferroic properties. By controlling the BO6 octahedral distortions and rotations through cationic substitutions, the use of strain engineering, or through the formation of superlattice structures, the functional properties of perovskites can be tuned. Motivating the use of structure-driven design in oxide heterostructures is the prediction of hybrid improper ferroelectricity in A'BO3/ABO3 superlattices. Two key design rules to realizing hybrid improper ferroelectricity are the growth of high quality superlattice structures with odd periodicities of the A / A' layers, and the control of the octahedral rotation pattern. My work explores the rotational response in perovskite oxides to strain and interface effects in thin films of RFeO3 ( R = La, Eu). I demonstrate a synchrotron x-ray diffraction technique to identify the rotation pattern that is present in the films. I then establish substrate imprinting as a key tool for controlling the rotation patterns in heterostructures, providing a means to realize the necessary structural variants of the predicted hybrid improper ferroelectricity in superlattices. In addition, by pairing measured diffraction data with a structure factor calculation, I demonstrate how one can extract both A-site and oxygen atomic positions in single crystal perovskite oxide films. Finally, I show results from (LaFeO 3)n/(EuFeO3)n superlattices (n = 1-5), synthesized to test the motivating predictions of hybrid improper ferroelectricity in oxide superlattices.

Beam Switching of an Nd:YAG Laser Using Domain-Engineered Prisms in Magnesium-Oxide-Doped Congruent Lithium Niobate

DTIC Science & Technology

2010-08-01

In this work, a novel electro - optic beam switch (EOBS) is designed, fabricated and demonstrated. The EOBS presented in this work is designed for a...consists of a series of electronically controlled prisms fabricated by ferroelectric domain inversion in an electro - optic crystal wafer. The prisms are

Polarization Rotation in Ferroelectric Tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 Superlattices.

PubMed

Lemée, Nathalie; Infante, Ingrid C; Hubault, Cécile; Boulle, Alexandre; Blanc, Nils; Boudet, Nathalie; Demange, Valérie; Karkut, Michael G

2015-09-16

In ferroelectric thin films, controlling the orientation of the polarization is a key element to controlling their physical properties. We use laboratory and synchrotron X-ray diffraction to investigate ferroelectric bicolor PbTiO3/PbZr0.2Ti0.8O3 and tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 superlattices and to study the role of the SrTiO3 layers on the domain structure. In the tricolor superlattices, we demonstrate the existence of 180° ferroelectric stripe nanodomains, induced by the depolarization field produced by the SrTiO3 layers. Each ultrathin SrTiO3 layer modifies the electrostatic boundary conditions between the ferroelectric layers compared to the corresponding bicolor structures, leading to the suppression of the a/c polydomain states. Combined with the electrostatic effect, the tensile strain induced by PbZr0.2Ti0.8O3 in the PbTiO3 layers leads to polarization rotation in the system as evidenced by grazing incidence X-ray measurements. This polarization rotation is associated with the monoclinic Mc phase as revealed by the splitting of the (HHL) and (H0L) reciprocal lattice points. This work demonstrates that the tricolor paraelectric/ferroelectric superlattices constitute a tunable system to investigate the concomitant effects of strains and depolarizing fields. Our studies provide a pathway to stabilize a monoclinic symmetry in ferroelectric layers, which is of particular interest for the enhancement of the piezoelectric properties.

Giant Magnetoelectric Energy Conversion Utilizing Inter-Ferroelectric Phase Transformations in Ferroics

NASA Astrophysics Data System (ADS)

Finkel, Peter; Staruch, Margo

Phase transition-based electromechanical transduction permits achieving a non-resonant broadband mechanical energy conversion see (Finkel et al Actuators, 5 [1] 2. (2015)) , the idea is based on generation high energy density per cycle , at least 100x of magnitude larger than linear piezoelectric type generators in stress biased [011]cut relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal can generate reversible strain >0.35% at remarkably low fields (0.1 MV/m) for tens of millions of cycles. Recently we demonstrated that large strain and polarization rotation can be generated for over 40 x 106cycles with little fatigue by realization of reversible ferroelectric-ferroelectric phase transition in [011] cut PIN-PMN-PT relaxor ferroelectric single crystal while sweeping through the transition with a low applied electric field <0.18 MV/m under mechanical stress. This methodology was extended in the present work to propose magnetoelectric (ME) composite hybrid system comprised of highly magnetostrictive alloymFe81.4Ga18.6 (Galfenol), and lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT) domain engineered relaxor ferroelectric single crystal. A small time-varying magnetic field applied to this system causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. ME coupling coefficient was fond to achieve 80 V/cm Oe near the FR-FO phase transition that is at least 100X of magnitude higher than any currently reported values.

Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

NASA Astrophysics Data System (ADS)

Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

2018-01-01

Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition in PbTiO3 nanocrystals and suppressing in BaTiO3 inclusions some transformations occurring in their bulk counterpart. The constructed phase maps open the possibility to calculate dielectric properties of strained PbTiO3 and BaTiO3 nanocrystals and ferroelectric nanocomposites comprising such crystallites.

Enhancement of fatigue endurance in ferroelectric PZT ceramic by the addition of bismuth layered SBT

NASA Astrophysics Data System (ADS)

Namsar, O.; Pojprapai, S.; Watcharapasorn, A.; Jiansirisomboon, S.

2014-10-01

Electrical fatigue properties of (1-x)PZT-xSBT ceramics (x = 0-1.0 weight fraction) were characterized. It was found that pure PZT ceramic had severe polarization fatigue. This was mainly attributed to an occurrence of the macroscopic cracks at near-electrode regions. On the contrary, pure SBT ceramic exhibited excellent fatigue resistance, which was attributed primarily to weak domain wall pinning. As small amount of SBT (0.1 ≤ x ≤ 0.3) was added into PZT, a small reduction of remanent polarization after fatigue process was observed. This demonstrated that these ceramics had high stability during the repeated domain switching due to their low oxygen vacancy concentration. Therefore, these results suggested that this new ceramic PZT-SBT system seemed to be an alternative material for replacing pure PZT in ferroelectric memory applications.

Incommensurate and commensurate modulations of Ba{sub 5}RTi{sub 3}Nb{sub 7}O{sub 30} (R = La, Nd) tungsten bronzes and the ferroelectric domain structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, Min Min; Li, Kun; Zhu, Xiao Li

2015-04-07

Incommensurate and commensurate structural modulations of Ba{sub 5}RTi{sub 3}Nb{sub 7}O{sub 30} (R = La, Nd) tungsten bronze ceramics were investigated by using a cooling holder equipped transmission electron microscopy in the temperature range from 100 K to 363 K. The incommensurate modulation was observed in both Ba{sub 5}LaTi{sub 3}Nb{sub 7}O{sub 30} and Ba{sub 5}NdTi{sub 3}Nb{sub 7}O{sub 30} at room temperature, while there was a transition from incommensurate tilted structure to commensurate superstructure for Ba{sub 5}NdTi{sub 3}Nb{sub 7}O{sub 30} with decreasing temperature. The incommensurate and commensurate modulations were determined by the A-site occupancy of Ba and R cations. The A-site disorder resulted in larger incommensurabilitymore » parameter δ and the diffusion of the satellite reflection spots. The effect of A-site disorder on the coupling between long-range dipolar order and the commensurate modulation was also discussed. The obvious ferroelectric 180° domains with spike-like shape parallel to c axis were observed for Ba{sub 5}NdTi{sub 3}Nb{sub 7}O{sub 30}, while no macro ferroelectric domain was determined for Ba{sub 5}LaTi{sub 3}Nb{sub 7}O{sub 30}.« less

Multivariate statistical characterization of charged and uncharged domain walls in multiferroic hexagonal YMnO3 single crystal visualized by a spherical aberration-corrected STEM.

PubMed

Matsumoto, Takao; Ishikawa, Ryo; Tohei, Tetsuya; Kimura, Hideo; Yao, Qiwen; Zhao, Hongyang; Wang, Xiaolin; Chen, Dapeng; Cheng, Zhenxiang; Shibata, Naoya; Ikuhara, Yuichi

2013-10-09

A state-of-the-art spherical aberration-corrected STEM was fully utilized to directly visualize the multiferroic domain structure in a hexagonal YMnO3 single crystal at atomic scale. With the aid of multivariate statistical analysis (MSA), we obtained unbiased and quantitative maps of ferroelectric domain structures with atomic resolution. Such a statistical image analysis of the transition region between opposite polarizations has confirmed atomically sharp transitions of ferroelectric polarization both in antiparallel (uncharged) and tail-to-tail 180° (charged) domain boundaries. Through the analysis, a correlated subatomic image shift of Mn-O layers with that of Y layers, exhibiting a double-arc shape of reversed curvatures, have been elucidated. The amount of image shift in Mn-O layers along the c-axis is statistically significant as small as 0.016 nm, roughly one-third of the evident image shift of 0.048 nm in Y layers. Interestingly, a careful analysis has shown that such a subatomic image shift in Mn-O layers vanishes at the tail-to-tail 180° domain boundaries. Furthermore, taking advantage of the annular bright field (ABF) imaging technique combined with MSA, the tilting of MnO5 bipyramids, the very core mechanism of multiferroicity of the material, is evaluated.

Investigation of reduced (Srx,Ba1-x)Nb 2O6 as a ferroelectric-based thermoelectric

NASA Astrophysics Data System (ADS)

Bock, Jonathan A.

A comprehensive study of a novel type of thermoelectric - a heavily doped material from a ferroelectric base composition - is presented. Due to the low-lying optic modes and scattering of phonons at domain walls, ferroelectrics make interesting candidates for thermoelectrics. The example of (Srx,Ba1-x)Nb2O6-delta (SBN) is explored in detail due to a report of an impressive thermoelectric figure of merit in single crystals. The goal of this research is to understand the source of the large figure of merit in SBN. In attempts to do this, the electron transport mechanism, the coupling between electron transport and ferroelectricity, the phase equilibria, and the single crystalline thermoelectric properties were investigated under various reduction conditions. It was found that the electron transport properties of a normal ferroelectric SBN can be well explained by activation of electrons into the conduction band from a localized impurity band. SBN can be shifted between a normal and relaxor ferroelectric by changing the Sr:Ba ratio. This property of SBN was utilized to study the effect of relaxor ferroelectricity on electron transport. Within the relaxor ferroelectric regime, a change in the activation energy for electronic conduction and an abnormal temperature dependence of the Seebeck coefficient were found. These properties are attributed to Anderson localization caused by the relaxor ferroelectricity. This is not thought to be the cause of the large thermoelectric figure of merit. The electron transport-ferroelectric coupling was also studied in oxygen deficient (Bax,Sr1-x)TiO3-delta (BST). A metallic-like to nonmetallic transition occurs at the ferroelectric transition, and the temperature of the metallic-like to nonmetallic transition can be shifted via Sr doping. The temperature shift on Sr doping is equivalent to the shift in the paraelectric ferroelectric transition temperature in unreduced samples, showing that the ferroelectric transition is the cause of the metallic-like to nonmetallic transition. These results show that the thermoelectric properties found in SBN upon reduction are due to a change from (Srx,Ba1-x)Nb2O6-delta toward (Srx,Ba1-x)1.2Nb2O6-delta and the resulting carrier concentration associated with the additional Sr2+ and Ba2+ cations on the A-site. Relaxor ferroelectricity perturbs the electron transport, but is not a cause of enhanced thermoelectric properties. This points toward A-site doped tungsten bronze materials in general as interesting thermoelectric materials. Future work revolving around decreasing the octahedral tilt angle, increasing the d-orbital overlap, and determining the necessity of ferroelectric-thermoelectric coupling in relation to thermal conductivity could result in further optimization within this new interesting family of thermoelectric oxides. (Abstract shortened by ProQuest.).

Calligraphic Poling of Ferroelectric Material

NASA Technical Reports Server (NTRS)

Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

2007-01-01

Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

Continuous Magnetoelectric Control in Multiferroic DyMnO3 Films with Twin-like Domains

NASA Astrophysics Data System (ADS)

Lu, Chengliang; Deniz, Hakan; Li, Xiang; Liu, Jun-Ming; Cheong, Sang-Wook

2016-02-01

The magnetic control of ferroelectric polarization is currently a central topic in the multiferroic researches, owing to the related gigantic magnetoelectric coupling and fascinating physics. Although a bunch of novel magnetoelectric effect have been discovered in multiferroics of magnetic origin, the manipulation of polarization was found to be fundamentally determined by the microscopic origin in a certain multiferroic phase, hindering the development of unusual magnetoelectric control. Here, we report emergent magnetoelectric control in DyMnO3/Nb:SrTiO3 (001) films showing twin-like domain structure. Our results demonstrate interesting magnetically induced partial switch of polarization due to the coexistence of polarizations along both the a-axis and c-axis enabled by the twin-like domain structure in DyMnO3 films, despite the polarization-switch was conventionally believed to be a one-step event in the bulk counterpart. Moreover, a continuous and periodic control of macroscopic polarization by an in-plane rotating magnetic field is evidenced in the thin films. This distinctive magnetic manipulation of polarization is the consequence of the cooperative action of the twin-like domains and the dual magnetic origin of polarization, which promises additional applications using the magnetic control of ferroelectricity.

Ferroelectrics under the Synchrotron Light: A Review

PubMed Central

Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

2015-01-01

Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

Domain and phase change contributions to response in high strain piezoelectric actuators

NASA Astrophysics Data System (ADS)

Cross, L. Eric

2000-09-01

Current solid state actuators are briefly compared to traditional actuator technologies to highlight the major need for enhanced strain capability. For the ferroelectric piezoelectric polycrystal ceramics, the balance of evidence suggests a large entrinsic contribution to the field induced strain from ferroelectric-ferroelastic domain wall motion. Here-to-fore the intrinsic single domain contribution has been derived indirectly from phenomenological analysis. Now, new evidence of a stable monoclinic phase at compositions very close to the MPB suggest that the previous assessment will need to be revised. Actuator behavior in the new lead zinc niobate-lead titanate (PZN:PT) single crystal shows most unusual anisotropic behavior. For 111 oriented field poled crystals in the rhombohedral phase normal low induced strain is observed. For 001 field poled crystals however massive (0.6%) quasi-linear anhysteritic strain can be induced. Since the 001 oriented field in the rhombohedral phase can not drive ferroelastic domain walls it is suggested that the strain must be intrinsic. The suggestion is that it is due to an induced monoclinic phase in which the Ps vector tilts under increasing field up to more than 20° from 111, before the vector switches to the tetragonal 001 direction. Such a polarization rotation mechanism has also been suggested by Fu and Cohen. Calculations of induced single domain strain using measured electrostriction constants agree well with observed behavior. Recent measurements by Park et al. and Wada et al. on single crystal BaTiO3 show strongly enhanced piezoelectricity at temperatures near the ferroelectric phase transitions. Of particular relevance is the inverse experiment forcing the tetragonal over to the rhombohedral phase with high 111 oriented field. From this result it is suggested that both cubic and dodecahedral mirrors participate in the reorientation through orthorhombic to the rhombohedral state giving rise to different value of the induced d33 at different field levels.

Domain wall conductivity in KTiOPO4 crystals

NASA Astrophysics Data System (ADS)

Lindgren, G.; Canalias, C.

2017-07-01

We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements reveal memristive-like behavior associated with topographic changes and permanent charge displacement. This behavior is observed for all the voltage sweep-rates at the domain walls, while it only occurs for low frequencies at the domains. We attribute these findings to the redistribution of ions due to the applied bias and their effect on the tip-sample barrier.

Resistive and Ferroelectric-Domain Switching in Multiferroic BiFeO3 Films

NASA Astrophysics Data System (ADS)

Ramirez, J. G.; Arango, I. C.; Gomez, M. F.; Dominguez, C.; Sulekar, S.; Cardona, A.; Trastoy, J.; Nino, J. C.; Schuller, I. K.; Gomez, M. E.

Resistive switching (RS) in oxides has attracted much attention due to its potential application for nonvolatile memory and neuromorphic computing devices. Here we study the voltage-induced RS mechanisms in metal/multiferroic/semiconductor (Au/BiFeO3/Nb:SrTiO3) thin film vertical devices. We found switching with RON and ROFF ratios as big as 0.16 at voltages starting at +/- 2V. Further voltage increase produced an intensification of the RS effects, until dielectric breakdown was reached. Interestingly, the voltage at which the RS effect appears coincides with the coercive voltage of the ferroelectric polarization in similar BiFeO3 films, as measured by piezoelectric force microscopy. This suggests that the primary RS mechanism is the ferroelectric switching. Impedance spectroscopy measurements show filamentary contributions after ferroelectric saturation, possible due to voltage-induced movement of charge defects across the device and therefore suggesting an additional RS mechanism. Work supported by: Univalle CI 7999; FAPA at Uniandes; Colciencias 120471250659 and 120424054303. J.T. acknowledges the support from the Fundación Areces (Spain); AFOSR and DoD for a Vannevar Bush Fellowship.

Electromechanical properties of Na0.5Bi0.5TiO3-SrTiO3-PbTiO3 solid solutions

NASA Astrophysics Data System (ADS)

Svirskas, Šarūnas; Dunce, Marija; Birks, Eriks; Sternberg, Andris; Banys, Jūras

2018-03-01

Thorough studies of electric field-induced strain are presented in 0.4Na1/2Bi1/2TiO3-(0.6-x)SrTiO3-xPbTiO3 (NBT-ST-PT) ternary solid solutions. The increase of concentration of lead x induces crossover from relaxor to ferroelectric. Strain in a relaxor state can be described by electrostrictive behavior. The electrostrictive coefficients correspond to other well-known relaxor ferroelectrics. The concentration region with a stable ferroelectric phase revealed that the polarization dependence of strain does not exhibit nonlinearity, although they are inherent to the electric field dependence of strain. In this case, electric field dependence of strain is described in terms of the Rayleigh law and the role of domain wall contribution is extracted. Finally, the character of strain at the electric field-induced phase transition between the nonpolar and the ferroelectric states is studied. The data shows that in the vicinity of the electric field induced phase transition the strain vs. electric field displays electrostrictive character.

Effects of configurational changes on molecular dynamics in polyvinylidene fluoride and poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jalarvo, N., E-mail: jalarvonh@ornl.gov, E-mail: abhijit.pramanick@gmail.com, E-mail: omardiallos@ornl.gov; Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; Pramanick, A., E-mail: jalarvonh@ornl.gov, E-mail: abhijit.pramanick@gmail.com, E-mail: omardiallos@ornl.gov

2015-08-24

We present a comparative study of proton dynamics in unpoled non-ferroelectric polymer polyvinylidene fluoride (PVDF) and in its trifluoroethylene containing ferroelectric copolymer (with 70/30 molar proportion), using quasi-elastic neutron scattering. The neutron data reveal the existence of two distinct types of molecular motions in the temperature range investigated. The slower motion, which is characterized in details here, is ascribed to protons jump diffusion along the polymeric carbon chains, while the faster motion could be attributed to localized rotational motion of methylene groups. At temperatures below the Curie point (T{sub c} ∼ 385 K) of the composite polymer, the slower diffusive mode experiences longermore » relaxation times in the ferroelectric blend than in the bare PVDF, although the net corresponding diffusion coefficient remains comparatively the same in both polymers with characteristic activation energy of E{sub A} ≈ 27–33 kJ/mol. This arises because of a temperature dependent jump length r{sub 0}, which we observe to be effectively longer in the copolymer, possibly due to the formation of ordered ferroelectric domains below T{sub c}. Above T{sub c}, there is no appreciable difference in r{sub 0} between the two systems. This observation directly relates the known dependence of T{sub c} on molar ratio to changes in r{sub 0}, providing fundamental insight into the ferroelectric properties of PVDF-based copolymers.« less

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

NASA Astrophysics Data System (ADS)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first-principles-based modeling of electric-field-induced phenomena in ferroelectric/antiferroelectric nanowires in order to address the aforementioned questions. (Abstract shortened by ProQuest.).

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

DOE PAGES

Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan; ...

2016-07-05

Ferroelectric materials are well-suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro-optic devices, and non-volatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a non-centrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change of properties withmore » decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, while in bulk ceramics, changes in properties from the values of large-grained specimens is most notable in samples with grain sizes below several microns. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics are reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. Ultimately, in many cases, multiple mechanisms combine to produce the observed scaling effects.« less

Polarization switching behavior of one-axis-oriented lead zirconate titanate films fabricated on metal oxide nanosheet layer

NASA Astrophysics Data System (ADS)

Uchida, Hiroshi; Ichinose, Daichi; Shiraishi, Takahisa; Shima, Hiromi; Kiguchi, Takanori; Akama, Akihiko; Nishida, Ken; Konno, Toyohiko J.; Funakubo, Hiroshi

2017-10-01

For the application of electronic devices using ferroelectric/piezoelectric components, one-axis-oriented tetragonal Pb(Zr0.40Ti0.60)O3 (PZT) films with thicknesses of up to 1 µm were fabricated with the aid of a Ca2Nb3O10 nanosheet (ns-CN) template for preferential crystal growth for evaluating their polarization switching behavior. The ns-CN template was supported on ubiquitous silicon (Si) wafer by a simple dip coating technique, followed by the repetitive chemical solution deposition (CSD) of PZT films. The PZT films were grown successfully with preferential crystal orientation of PZT(100) up to the thickness of 1020 nm. The (100)-oriented PZT film with ∼1 µm thickness exhibited unique polarization behavior of ferroelectric polarization, i.e., a marked increase in remanent polarization (P r) up to approximately 40 µC/cm2 induced by domain switching under high electric field, whereas the film with a lower thickness showed only a lower P r of approximately 11 µC/cm2 even under a high electric field. The ferroelectric property of the (100)-oriented PZT film after domain switching on ns-CN/Pt/Si can be comparable to those of (001)/(100)-oriented epitaxial PZT films.

Preamble

NASA Astrophysics Data System (ADS)

Schmid, Hans

2015-03-01

What does the word "multiferroic" mean? When coining the term in 1994, this was done without ulterior motives, simply by enjoying the beauty of symmetries, permitting the cohabitation of two or all three primary ferroic properties, ferroelectric, ferromagnetic, and ferroelastic in the same phase, all forming domains and hysteresis loops, heralding intricate coupling properties. In this definition, the very cradle of "multiferroics" lies in Kêitsiro Aizu's colossal work of 1970, in which he gave all the 773 high-temperature (prototypic) phase/low-temperature (ferroic) phase point group pairs ("species") occurring due to phase transitions, with indication of the number of domain states, comprising all possible single-phase multiferroic combinations, including implicitly also antiferromagnetic and co-elastic ferroic phases. The original meaning of the word "multiferroic" has undergone a tacit, more realistic mutation. In its current usage, it designates all kinds of magnetic ferroelectrics, including hetero-phase systems, but with a mainstream trend in electric-field control of ferromagnetism and in all sorts of magnetoelectric interactions.

Femtosecond resolution of soft mode dynamics in structural phase transitions

NASA Technical Reports Server (NTRS)

Dougherty, Thomas P.; Wiederrecht, Gary P.; Nelson, Keith A.; Garrett, Mark H.; Jensen, Hans P.; Warde, Cardinal

1992-01-01

The microscopic pathway along which ions or molecules in a crystal move during structural phase transition can often be described in terms of a collective vibrational mode of the lattice. In many cases, this mode, called a 'soft' phonon mode because of its characteristically low frequency near the phase transition temperature, is difficult to characterize through conventional frequency-domain spectroscopies such as light or neutron scattering. A femtosecond time-domain analog of light-scattering spectroscopy called impulsive stimulated Raman scattering (ISRS) has been used to examine the soft modes of two perovskite ferroelectric crystals. The low-frequency lattice dynamics of KNbO3 and BaTiO3 are clarified in a manner that permits critical evaluation of microscopic models for their ferroelectric transitions. The results illustrate the advantages of ISRS over conventional Raman spectroscopy of low-frequency, heavily damped soft modes.

Structuring of material parameters in lithium niobate crystals with low-mass, high-energy ion radiation

NASA Astrophysics Data System (ADS)

Peithmann, K.; Eversheim, P.-D.; Goetze, J.; Haaks, M.; Hattermann, H.; Haubrich, S.; Hinterberger, F.; Jentjens, L.; Mader, W.; Raeth, N. L.; Schmid, H.; Zamani-Meymian, M.-R.; Maier, K.

2011-10-01

Ferroelectric lithium niobate crystals offer a great potential for applications in modern optics. To provide powerful optical components, tailoring of key material parameters, especially of the refractive index n and the ferroelectric domain landscape, is required. Irradiation of lithium niobate crystals with accelerated ions causes strong structured modifications in the material. The effects induced by low-mass, high-energy ions (such as 3He with 41 MeV, which are not implanted, but transmit through the entire crystal volume) are reviewed. Irradiation yields large changes of the refractive index Δn, improved domain engineering capability within the material along the ion track, and waveguiding structures. The periodic modification of Δn as well as the formation of periodically poled lithium niobate (PPLN) (supported by radiation damage) is described. Two-step knock-on displacement processes, 3He→Nb and 3He→O causing thermal spikes, are identified as origin for the material modifications.

Misfit strain-temperature phase diagrams and domain stability of asymmetric ferroelectric capacitors: Thermodynamic calculation and phase-field simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, W. J.; Zheng, Yue, E-mail: zhengy35@mail.sysu.edu.cn; Wu, C. M.

Thermodynamic calculation and phase-field simulation have been conducted to investigate the misfit strain-temperature phase diagrams, dielectric property, and domain stability of asymmetric ferroelectric capacitors (FCs), with considering the effects of dissimilar screening properties and work function steps at the two interfaces. The distinct features of asymmetric FCs from their symmetric counterparts have been revealed and discussed. Polar states with nonzero out-of-plane polarization in parallel with the built-in field are found preferential to form in asymmetric FCs. Meanwhile, the built-in field breaks the degeneracy of states with out-of-plane polarization in anti-directions. This leads to the necessity of redefining phases according tomore » the bistability of out-of-plane polarization. Moreover, the phase stability as well as the dielectric behavior can be significantly controlled by the properties of electrodes, misfit strain, and temperature. The phase-field simulation result also shows that polydomain instability would happen in asymmetric FCs as the equivalence of domain stability in anti-directions is destroyed.« less

Static and Dynamic Properties of Ferroelectric Thin Film Memories.

NASA Astrophysics Data System (ADS)

Duiker, Hendrik Matthew

Several properties of ferroelectric thin-film memories have been modeled. First, it has been observed experimentally that the bulk phase KNO_3 has a first-order phase transition, and that the transition temperature of KNO_3 thin-films increases as the thickness of the film is decreased. A Landau theory of first-order phase transitions in bulk systems has been generalized by adding surface terms to the free energy expansion to account for these transition properties. The model successfully describes the observed transition properties and predicts the existence of films in which the surfaces are ordered at temperatures higher than the bulk transition temperature. Second, the Avrami model of polarization-reversal kinetics has been modified to describe the following cases: ferroelectrics composed of a large number of small grains; ferroelectric thin-films in which nucleation occurs at the surfaces, not in the bulk; ferroelectrics in which long-range dipolar interactions significantly affect the nucleation rate; and non-square wave switching pulses. The models were verified by applying them to the results of two-dimensional Ising model simulations. It was shown that the models allow the possibility of directly obtaining microscopic parameters, such as the nucleation rate and domain wall velocity, from bulk measurements. Finally, a model describing the fatigue of ferroelectric memories has been developed. As a ferroelectric memory fatigues the spontaneous polarization per unit volume decreases, the switching time decreases, and eventually the memory "shorts out" and becomes conducting. The model assumes the following: during each polarization reversal the film undergoes, every unit cell in the film has a chance of "degrading" and thus losing an ion. Degraded cells no longer contribute to the polarization. The ions are allowed to diffuse to the surfaces of the film and form, with other ions, conducting dendrites which grow into the bulk of the film. Computer simulations performed on a two dimensional lattice with the above model successfully described the phenomena observed during the fatigue of PZT and other types of ferroelectric thin-film memories films.

Domain Processes in Ferroelectric Ceramics

DTIC Science & Technology

1994-04-14

elastic strain tensor and eikl is the Levi - Civita density. Eqs (11) and (12) has three nontrivial solutions: Xr3 = 0 (13) Xr"= -1 { [ 2sj2Q 12 -Sl I...ABSTRACT (aA~iMUM 200 wardt) This report Outlines the progres achieved during a two year effort sponsored by the AFOSR on the theoretical study of domain...INTRODUCTION This is the final progress report for this two year program sponsored by the Air Force Office of Scientific Research on "Domain Processes in

Conduction at domain walls in insulating Pb(Zr0.2 Ti0.8)O3 thin films.

PubMed

Guyonnet, Jill; Gaponenko, Iaroslav; Gariglio, Stefano; Paruch, Patrycja

2011-12-01

Domain wall conduction in insulating Pb(Zr(0.2) Ti(0.8))O(3) thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electromechanical coupling and temperature-dependent polarization reversal in piezoelectric ceramics.

PubMed

Weaver, Paul M; Cain, Markys G; Correia, Tatiana M; Stewart, Mark

2011-09-01

Electrostriction plays a central role in describing the electromechanical properties of ferroelectric materials, including widely used piezoelectric ceramics. The piezoelectric properties are closely related to the underlying electrostriction. Small-field piezoelectric properties can be described as electrostriction offset by the remanent polarization which characterizes the ferroelectric state. Indeed, even large-field piezoelectric effects are accurately accounted for by quadratic electrostriction. However, the electromechanical properties deviate from this simple electrostrictive description at electric fields near the coercive field. This is particularly important for actuator applications, for which very high electromechanical coupling can be obtained in this region. This paper presents the results of an experimental study of electromechanical coupling in piezoelectric ceramics at electric field strengths close to the coercive field, and the effects of temperature on electromechanical processes during polarization reversal. The roles of intrinsic ferroelectric strain coupling and extrinsic domain processes and their temperature dependence in determining the electromechanical response are discussed.

Ferroelectric/Semiconductor Tunable Microstrip Patch Antenna Developed

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

2001-01-01

A lithographically printed microwave antenna that can be switched and tuned has been developed. The structure consists of a rectangular metallic "patch" radiator patterned on a thin ferroelectric film that was grown on high-resistivity silicon. Such an antenna may one day enable a single-phased array aperture to transmit and receive signals at different frequencies, or it may provide a simple way to reconfigure fractal arrays for communications and radar applications.

Soft tilt and rotational modes in the hybrid improper ferroelectric Ca3Mn2O7

NASA Astrophysics Data System (ADS)

Glamazda, A.; Wulferding, D.; Lemmens, P.; Gao, B.; Cheong, S.-W.; Choi, K.-Y.

2018-03-01

Raman spectroscopy is employed to probe directly the soft rotation and tilting modes, which are two primary order parameters predicted in the hybrid improper ferroelectric material Ca3Mn2O7 . We observe a giant softening of the 107 -cm-1 octahedron tilting mode by 26 cm-1 on heating through the structural transition from a ferroelectric to paraelectric orthorhombic phase. This is contrasted by a small softening of the 150 -cm-1 rotational mode by 6 cm-1. In the intermediate phase, the competing soft modes with different symmetries coexist, bringing about many-faceted anomalies in spin excitations and lattice vibrations. Our work demonstrates that the soft rotation and tilt patterns, relying on a phase-transition path, are a key factor in determining ferroelectric, magnetic, and lattice properties of Ca3Mn2O7 .

Local piezoelectric behavior in PZT-based thin films for ultrasound transducers

NASA Astrophysics Data System (ADS)

Griggio, Flavio

Piezoelectric microelectromechanical systems (MEMS) are currently used in inkjet printers and precision resonators; numerous additional applications are being investigated for sensors, low-voltage actuators, and transducers. This work was aimed at improving piezoelectric MEMS by taking two approaches: 1) identifying factors affecting the piezoelectric response of ferroelectric thin films and 2) demonstrating integration of these films into a high frequency array transducer. It was found that there are several key factors influencing the piezoelectric response of thin films for a given material composition. First, large grain size improves the piezoelectric response. This was demonstrated using chemical solution deposited lead nickel niobate -- lead zirconate titanate (0.3)Pb(Ni 0.33Nb0.67)O3 - (0.7)Pb(Zr0.45Ti 0.55O3), (PNN-PZT) ferroelectric thin films. It was shown that this composition allows greater microstructural control than does PZT. Dielectric permittivities ranging from 1350 to 1520 and a transverse piezoelectric coefficient e31,f as high as -- 9.7 C/m 2 were observed for films of about 0.25 mum in thickness. The permittivity and piezoelectric response as well as extrinsic contributions to the dielectric constant increased by 14 and 12 % respectively for samples with grain sizes ranging from 110 to 270 nm. A second factor influencing the piezoelectric response is film composition with respect to the morphotropic phase boundary (MPB). The composition dependence of the dielectric and piezoelectric nonlinearities was characterized in epitaxially grown (0.3)Pb(Ni0.33Nb0.67)O3-(0.7)Pb(Zr xTi1-xO3) thin films deposited on SrTiO 3 to minimize the influence of large-angle grain boundaries. Tetragonal, MPB and rhombohedral films were prepared by changing the Zr/Ti ratio. The largest dielectric and piezoelectric nonlinearities were observed for the rhombohedral sample; this resulted from a higher domain wall mobility due to a smaller ferroelectric distortion and superior crystal quality. Thirdly, changes in the mechanical boundary conditions experienced by a ferroelectric thin film were found to influence both the properties and the length scale for correlated motion of domain walls. Microfabrication was employed to release the PZT films from the Si substrate. Nonlinear piezoelectric maps, by band excitation piezoforce microscopy, showed formation of clusters of higher nonlinear activities of similar size for clamped PZT films with different microstructures. However PZT films that had been released from the Si substrate showed a distinct increase in the correlation length associated with coupled domain wall motion, suggesting that the local mechanical boundary conditions, more than microstructure or composition govern the domain wall dynamics. Release of both the local and the global stress states in films produced dielectric nonlinearities comparable to those of bulk ceramics. The second research direction was targeted at demonstrating the functionality of a one dimensional transducer array. A diaphragm geometry was used for the transducer arrays in order to benefit from the unimorph-type displacement of the PZT-SiO2 layers. For this purpose, the PZT and remaining films in the stack were patterned using reactive ion etching and partially released from the underlying silicon substrate by XeF2 etching from the top. Admittance measurements on the fabricated structures showed resonance frequencies at ˜40 MHz for a 80 mum diameter-wide diaphragms with a PZT thickness of 1.74 mum. In-water transmit and receive functionalities were demonstrated. A bandwidth on receive of 80 % centered at 40 MHz was determined during pitch-mode tests.

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

NASA Astrophysics Data System (ADS)

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-01

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

PubMed

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-08

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review.

PubMed

Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

2015-03-01

Relaxor-PbTiO 3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients ( d 33 > 1500 pC/N) and electromechanical coupling factors ( k 33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O 3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials' behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor-PT crystals are summarized to guide on-going and future research in the development of relaxor-PT crystals for the next generation electroacoustic transducers.

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belianinov, Alex; Burch, Matthew J.; Hysmith, Holland E.

Transitioning to multi-material systems as either interfaced 2D materials or 3D heterostructures can lead to the next generation multi-functional device architectures. Combined direct physical and chemical nanoscale control of these systems offers a new way to tailor material and device functionality as functional structures reach their physical limit. Transition metal thiophosphate (TPS), Cu 1-xIn 1+x/3P 2S 6, that have ferroelectric polarization behavior as layered crystals at room temperature and above make them attractive candidates for direct material sculpting of both chemical and functional properties. The bulk material exhibits stable ferroelectric polarization corroborated by domain structures, rewritable polarization, and hysteresis loops.more » Our previous studies have demonstrated that ferroic order persists on the surface and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we elucidate the chemical changes induced through helium ion irradiation in the TPS family library with varying Cu/In ratio formulations using correlated AFM and ToF-SIMS imaging. We correlate nano- and micro- structures that scale, in area and volume, to the total dose of the helium ion beam, as well as the overall copper concentration in the sample. Furthermore, our ToF-SIMS results show that ion irradiation leads to oxygen penetration as a function of Cu concentration, and proceeds along the Cu domains to the stopping distance of the helium ions in the TPS material. These results opens up new opportunities to understand and implement ferroicly coupled van der Waal devices into an existing framework of 2D heterostructures by locally tuning material chemistry and functionality.« less

LiNbO3 surfaces from a microscopic perspective

NASA Astrophysics Data System (ADS)

Sanna, Simone; Gero Schmidt, Wolf

2017-10-01

A large number of oxides has been investigated in the last twenty years as possible new materials for various applications ranging from opto-electronics to heterogeneous catalysis. In this context, ferroelectric oxides are particularly promising. The electric polarization plays a crucial role at many oxide surfaces, and it largely determines their physical and chemical properties. Ferroelectrics offer in addition the possibility to control/switch the electric polarization and hence the surface chemistry, allowing for the realization of domain-engineered nanoscale devices such as molecular detectors or highly efficient catalysts. Lithium niobate (LiNbO3) is a ferroelectric with a high spontaneous polarization, whose surfaces have a huge and largely unexplored potential. Owing to recent advances in experimental techniques and sample preparation, peculiar and exclusive properties of LiNbO3 surfaces could be demonstrated. For example, water films freeze at different temperatures on differently polarized surfaces, and the chemical etching properties of surfaces with opposite polarization are strongly different. More important, the ferroelectric domain orientation affects temperature dependent surface stabilization mechanisms and molecular adsorption phenomena. Various ab initio theoretical investigations have been performed in order to understand the outcome of these experiments and the origin of the exotic behavior of the lithium niobate surfaces. Thanks to these studies, many aspects of their surface physics and chemistry could be clarified. Yet other puzzling features are still not understood. This review gives a résumé on the present knowledge of lithium niobate surfaces, with a particular view on their microscopic properties, explored in recent years by means of ab initio calculations. Relevant aspects and properties of the surfaces that need further investigation are briefly discussed. The review is concluded with an outlook of challenges and potential payoff for LiNbO3 based applications.

Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review

PubMed Central

Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

2014-01-01

Relaxor-PbTiO3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients (d33 > 1500 pC/N) and electromechanical coupling factors (k33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials’ behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor-PT crystals are summarized to guide on-going and future research in the development of relaxor-PT crystals for the next generation electroacoustic transducers. PMID:25530641

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam

DOE PAGES

Belianinov, Alex; Burch, Matthew J.; Hysmith, Holland E.; ...

2017-11-30

Transitioning to multi-material systems as either interfaced 2D materials or 3D heterostructures can lead to the next generation multi-functional device architectures. Combined direct physical and chemical nanoscale control of these systems offers a new way to tailor material and device functionality as functional structures reach their physical limit. Transition metal thiophosphate (TPS), Cu 1-xIn 1+x/3P 2S 6, that have ferroelectric polarization behavior as layered crystals at room temperature and above make them attractive candidates for direct material sculpting of both chemical and functional properties. The bulk material exhibits stable ferroelectric polarization corroborated by domain structures, rewritable polarization, and hysteresis loops.more » Our previous studies have demonstrated that ferroic order persists on the surface and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoichiometric Cu/In ratio formulations. Here, we elucidate the chemical changes induced through helium ion irradiation in the TPS family library with varying Cu/In ratio formulations using correlated AFM and ToF-SIMS imaging. We correlate nano- and micro- structures that scale, in area and volume, to the total dose of the helium ion beam, as well as the overall copper concentration in the sample. Furthermore, our ToF-SIMS results show that ion irradiation leads to oxygen penetration as a function of Cu concentration, and proceeds along the Cu domains to the stopping distance of the helium ions in the TPS material. These results opens up new opportunities to understand and implement ferroicly coupled van der Waal devices into an existing framework of 2D heterostructures by locally tuning material chemistry and functionality.« less

Ordered arrays of multiferroic epitaxial nanostructures.

PubMed

Vrejoiu, Ionela; Morelli, Alessio; Biggemann, Daniel; Pippel, Eckhard

2011-01-01

Epitaxial heterostructures combining ferroelectric (FE) and ferromagnetic (FiM) oxides are a possible route to explore coupling mechanisms between the two independent order parameters, polarization and magnetization of the component phases. We report on the fabrication and properties of arrays of hybrid epitaxial nanostructures of FiM NiFe(2)O(4) (NFO) and FE PbZr(0.52)Ti(0.48)O(3) or PbZr(0.2)Ti(0.8)O(3), with large range order and lateral dimensions from 200 nm to 1 micron. The structures were fabricated by pulsed-laser deposition. High resolution transmission electron microscopy and high angle annular dark-field scanning transmission electron microscopy were employed to investigate the microstructure and the epitaxial growth of the structures. Room temperature ferroelectric and ferrimagnetic domains of the heterostructures were imaged by piezoresponse force microscopy (PFM) and magnetic force microscopy (MFM), respectively. PFM and MFM investigations proved that the hybrid epitaxial nanostructures show ferroelectric and magnetic order at room temperature. Dielectric effects occurring after repeated switching of the polarization in large planar capacitors, comprising ferrimagnetic NiFe2O4 dots embedded in ferroelectric PbZr0.52Ti0.48O3 matrix, were studied. These hybrid multiferroic structures with clean and well defined epitaxial interfaces hold promise for reliable investigations of magnetoelectric coupling between the ferrimagnetic / magnetostrictive and ferroelectric / piezoelectric phases.

Investigation of domain walls in PPLN by confocal raman microscopy and PCA analysis

NASA Astrophysics Data System (ADS)

Shur, Vladimir Ya.; Zelenovskiy, Pavel; Bourson, Patrice

2017-07-01

Confocal Raman microscopy (CRM) is a powerful tool for investigation of ferroelectric domains. Mechanical stresses and electric fields existed in the vicinity of neutral and charged domain walls modify frequency, intensity and width of spectral lines [1], thus allowing to visualize micro- and nanodomain structures both at the surface and in the bulk of the crystal [2,3]. Stresses and fields are naturally coupled in ferroelectrics due to inverse piezoelectric effect and hardly can be separated in Raman spectra. PCA is a powerful statistical method for analysis of large data matrix providing a set of orthogonal variables, called principal components (PCs). PCA is widely used for classification of experimental data, for example, in crystallization experiments, for detection of small amounts of components in solid mixtures etc. [4,5]. In Raman spectroscopy PCA was applied for analysis of phase transitions and provided critical pressure with good accuracy [6]. In the present work we for the first time applied Principal Component Analysis (PCA) method for analysis of Raman spectra measured in periodically poled lithium niobate (PPLN). We found that principal components demonstrate different sensitivity to mechanical stresses and electric fields in the vicinity of the domain walls. This allowed us to separately visualize spatial distribution of fields and electric fields at the surface and in the bulk of PPLN.

In situ visualization of domain structure evolution during field cooling in 0.67PMN-0.33PT single crystal

NASA Astrophysics Data System (ADS)

Ushakov, A. D.; Esin, A. A.; Chezganov, D. S.; Turygin, A. P.; Akhmatkhanov, A. R.; Hu, Q.; Sun, L.; Wei, X.; Shur, V. Ya

2017-10-01

The evolution of the domain structure during in-field cooling was in situ studied in [001]-cut single crystals of relaxor ferroelectric (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) with x = 0.33 with maximum of dielectric permittivity at 150°C. The main stages of domain evolution have been separated. The visualization of the static as-grown and polarized domain structures with high spatial resolution by piezoresponse force microscopy and scanning electron microscopy allowed measuring the characteristic features of maze and needle-like domain structures.

Imaging and engineering the nanoscale-domain structure of a Sr0.61Ba0.39Nb2O6 crystal using a scanning force microscope

NASA Astrophysics Data System (ADS)

Terabe, K.; Takekawa, S.; Nakamura, M.; Kitamura, K.; Higuchi, S.; Gotoh, Y.; Gruverman, A.

2002-09-01

We have investigated the ferroelectric domain structure formed in a Sr0.61Ba0.39Nb2O6 single crystal by cooling the crystal through the Curie point. Imaging the etched surface structure using a scanning force microscope (SFM) in both the topographic mode and the piezoresponse mode revealed that a multidomain structure of nanoscale islandlike domains was formed. The islandlike domains could be inverted by applying an appropriate voltage using a conductive SFM tip. Furthermore, a nanoscale periodically inverted-domain structure was artificially fabricated using the crystal which underwent poling treatment.

Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheng, Guang; Hu, Jia-Mian; Zhang, Jinxian

Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.

Phase coexistence and electric-field control of toroidal order in oxide superlattices.

PubMed

Damodaran, A R; Clarkson, J D; Hong, Z; Liu, H; Yadav, A K; Nelson, C T; Hsu, S-L; McCarter, M R; Park, K-D; Kravtsov, V; Farhan, A; Dong, Y; Cai, Z; Zhou, H; Aguado-Puente, P; García-Fernández, P; Íñiguez, J; Junquera, J; Scholl, A; Raschke, M B; Chen, L-Q; Fong, D D; Ramesh, R; Martin, L W

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

PubMed Central

Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

2015-01-01

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

Phase coexistence and electric-field control of toroidal order in oxide superlattices

NASA Astrophysics Data System (ADS)

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.; Liu, H.; Yadav, A. K.; Nelson, C. T.; Hsu, S.-L.; McCarter, M. R.; Park, K.-D.; Kravtsov, V.; Farhan, A.; Dong, Y.; Cai, Z.; Zhou, H.; Aguado-Puente, P.; García-Fernández, P.; Íñiguez, J.; Junquera, J.; Scholl, A.; Raschke, M. B.; Chen, L.-Q.; Fong, D. D.; Ramesh, R.; Martin, L. W.

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO3/SrTiO3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a1/a2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

DOE PAGES

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.; ...

2017-08-07

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3/SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1/a 2 phase. At room temperature, the coexisting vortexmore » and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Here, our findings suggest new cross-coupled functionalities.« less

Effects of external mechanical loading on phase diagrams and dielectric properties in epitaxial ferroelectric thin films with anisotropic in-plane misfit strains

NASA Astrophysics Data System (ADS)

Qiu, J. H.; Jiang, Q.

2007-02-01

A phenomenological Landau-Devonshine theory is used to describe the effects of external mechanical loading on equilibrium polarization states and dielectric properties in epitaxial ferroelectric thin films grown on dissimilar orthorhombic substrates which induce anisotropic misfit strains in the film plane. The calculation focuses on single-domain perovskite BaTiO3 and PbTiO3 thin films on the assumption that um1=-um2. Compared with the phase diagrams without external loading, the characteristic features of "misfit strain-misfit strain" phase diagrams at room temperature are the presence of paraelectric phase and the strain-induced ferroelectric to paraelectric phase transition. Due to the external loading, the "misfit strain-stress" and "stress-temperature" phase diagrams also have drastic changes, especially for the vanishing of paraelectric phase in "misfit strain-stress" phase map and the appearance of possible ferroelectric phases. We also investigate the dielectric properties and the tunability of both BaTiO3 and PbTiO3 thin films. We find that the external stress dependence of phase diagrams and dielectric properties largely depends on strain anisotropy as well.

High Temperature Ferroelectrics for Actuators: Recent Developments and Challenges

NASA Technical Reports Server (NTRS)

Sehirlioglu, Alp; Kowalski, Benjamin

2014-01-01

A variety of piezoelectric applications have been driving the research in development of new high temperature ferroelectrics; ranging from broader markets such as fuel and gas modulation and deep well oil drilling to very specific applications such as thermoacoustic engines and ultrasonic drilling on the surface of Venus. The focus has been mostly on increasing the Curie temperature. However, greater challenges for high temperature ferroelectrics limit the operating temperature to levels much below the Curie temperature. These include enhanced loss tangent and dc conductivity at high fields as well as depoling due to thermally activated domain rotation. The initial work by Eitel et al. [Jpn. J. Appl. Phys., 40 [10, Part 1] 59996002 (2001)] increased interest in investigation of Bismuth containing perovskites in solid solution with lead titanate. Issues that arise vary from solubility limits to increased tetragonality; the former one prohibits processing of morphotropic phase boundary, while the latter one impedes thorough poling of the polycrystalline ceramics. This talk will summarize recent advances in development of high temperature piezoelectrics and provide information about challenges encountered as well as the approaches taken to improve the high temperature behavior of ferroelectrics with a focus on applications that employ the converse piezoelectric effect.

Electric-field-induced local and mesoscale structural changes in polycrystalline dielectrics and ferroelectrics

DOE PAGES

Usher, Tedi -Marie; Levin, Igor; Daniels, John E.; ...

2015-10-01

In this study, the atomic-scale response of dielectrics/ferroelectrics to electric fields is central to their functionality. Here we introduce an in situ characterization method that reveals changes in the local atomic structure in polycrystalline materials under fields. The method employs atomic pair distribution functions (PDFs), determined from X-ray total scattering that depends on orientation relative to the applied field, to probe structural changes over length scales from sub-Ångstrom to several nanometres. The PDF is sensitive to local ionic displacements and their short-range order, a key uniqueness relative to other techniques. The method is applied to representative ferroelectrics, BaTiO 3 andmore » Na ½Bi ½TiO 3, and dielectric SrTiO 3. For Na ½Bi ½TiO 3, the results reveal an abrupt field-induced monoclinic to rhombohedral phase transition, accompanied by ordering of the local Bi displacements and reorientation of the nanoscale ferroelectric domains. For BaTiO 3 and SrTiO 3, the local/nanoscale structural changes observed in the PDFs are dominated by piezoelectric lattice strain and ionic polarizability, respectively.« less

Light-Induced Capacitance Tunability in Ferroelectric Crystals.

PubMed

Páez-Margarit, David; Rubio-Marcos, Fernando; Ochoa, Diego A; Del Campo, Adolfo; Fernández, José F; García, José E

2018-06-25

The remote controlling of ferroic properties with light is nowadays a hot and highly appealing topic in materials science. Here, we shed light on some of the unresolved issues surrounding light-matter coupling in ferroelectrics. Our findings show that the capacitance and, consequently, its related intrinsic material property, i.e., the dielectric constant, can be reversibly adjusted through the light power control. High photodielectric performance is exhibited across a wide range of the visible light wavelength because of the wavelength-independence of the phenomenon. We have verified that this counterintuitive behavior can be strongly ascribed to the existence of "locally free charges" at domain wall.

Continuum damage model for ferroelectric materials and its application to multilayer actuators

NASA Astrophysics Data System (ADS)

Gellmann, Roman; Ricoeur, Andreas

2016-05-01

In this paper a micromechanical continuum damage model for ferroelectric materials is presented. As a constitutive law it is implemented into a finite element (FE) code. The model is based on micromechanical considerations of domain switching and its interaction with microcrack growth and coalescence. A FE analysis of a multilayer actuator is performed, showing the initiation of damage zones at the electrode tips during the poling process. Further, the influence of mechanical pre-stressing on damage evolution and actuating properties is investigated. The results provided in this work give useful information on the damage of advanced piezoelectric devices and their optimization.

Wavelength and bandwidth tunable photonic stopband of ferroelectric liquid crystals.

PubMed

Ozaki, Ryotaro; Moritake, Hiroshi

2012-03-12

The chiral smectic C phase of ferroelectric liquid crystals (FLCs) has a self-assembling helical structure which is regarded as a one-dimensional pseudo-photonic crystal. It is well known that a stopband of a FLC can be tuned in wavelength domain by changing temperature or electric field. We here have demonstrated an FLC stopband with independently tunable wavelength and bandwidth by controlling temperature and incident angle. At highly oblique incidence, the stopband does not have polarization dependence. Furthermore, the bandwidth at highly oblique incidence is much wider than that at normal incidence. The mechanism of the tunable stopband is clarified by considering the reflection at oblique incidence.

Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film.

PubMed

Jia, Tingting; Fan, Ziran; Yao, Junxiang; Liu, Cong; Li, Yuhao; Yu, Junxi; Fu, Bi; Zhao, Hongyang; Osada, Minoru; Esfahani, Ehsan Nasr; Yang, Yaodong; Wang, Yuanxu; Li, Jiang-Yu; Kimura, Hideo; Cheng, Zhenxiang

2018-06-20

Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d 33 were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field ( H), electric field ( E), mechanical force ( F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85BiTi 0.1 F e0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.

Electromechanical properties of engineered lead free potassium sodium niobate based materials =

NASA Astrophysics Data System (ADS)

Rafiq, Muhammad Asif

K0.5Na0.5NbO3 (KNN), is the most promising lead free material for substituting lead zirconate titanate (PZT) which is still the market leader used for sensors and actuators. To make KNN a real competitor, it is necessary to understand and to improve its properties. This goal is pursued in the present work via different approaches aiming to study KNN intrinsic properties and then to identify appropriate strategies like doping and texturing for designing better KNN materials for an intended application. Hence, polycrystalline KNN ceramics (undoped, non-stoichiometric; NST and doped), high-quality KNN single crystals and textured KNN based ceramics were successfully synthesized and characterized in this work. Polycrystalline undoped, non-stoichiometric (NST) and Mn doped KNN ceramics were prepared by conventional ceramic processing. Structure, microstructure and electrical properties were measured. It was observed that the window for mono-phasic compositions was very narrow for both NST ceramics and Mn doped ceramics. For NST ceramics the variation of A/B ratio influenced the polarization (P-E) hysteresis loop and better piezoelectric and dielectric responses could be found for small stoichiometry deviations (A/B = 0.97). Regarding Mn doping, as compared to undoped KNN which showed leaky polarization (P-E) hysteresis loops, B-site Mn doped ceramics showed a well saturated, less-leaky hysteresis loop and a significant properties improvement. Impedance spectroscopy was used to assess the role of Mn and a relation between charge transport - defects and ferroelectric response in K0.5Na0.5NbO3 (KNN) and Mn doped KNN ceramics could be established. At room temperature the conduction in KNN which is associated with holes transport is suppressed by Mn doping. Hence Mn addition increases the resistivity of the ceramic, which proved to be very helpful for improving the saturation of the P-E loop. At high temperatures the conduction is dominated by the motion of ionized oxygen vacancies whose concentration increases with Mn doping. Single crystals of potassium sodium niobate (KNN) were grown by a modified high temperature flux method. A boron-modified flux was used to obtain the crystals at a relatively low temperature. XRD, EDS and ICP analysis proved the chemical and crystallographic quality of the crystals. The grown KNN crystals exhibit higher dielectric permittivity (29,100) at the tetragonal-to-cubic phase transition temperature, higher remnant polarization (19.4 ?C/cm2) and piezoelectric coefficient (160 pC/N) when compared with the standard KNN ceramics. KNN single crystals domain structure was characterized for the first time by piezoforce response microscopy. It could be observed that - oriented potassium sodium niobate (KNN) single crystals reveal a long range ordered domain pattern of parallel 180° domains with zig-zag 90° domains. From the comparison of KNN Single crystals to ceramics, It is argued that the presence in KNN single crystal (and absence in KNN ceramics) of such a long range order specific domain pattern that is its fingerprint accounts for the improved properties of single crystals. These results have broad implications for the expanded use of KNN materials, by establishing a relation between the domain patterns and the dielectric and ferroelectric response of single crystals and ceramics and by indicating ways of achieving maximised properties in KNN materials. (Abstract shortened by ProQuest.).

Fast strain wave induced magnetization changes in long cobalt bars: Domain motion versus coherent rotation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davis, S.; Adenwalla, S., E-mail: sadenwalla1@unl.edu; Borchers, J. A.

2015-02-14

A high frequency (88 MHz) traveling strain wave on a piezoelectric substrate is shown to change the magnetization direction in 40 μm wide Co bars with an aspect ratio of 10{sup 3}. The rapidly alternating strain wave rotates the magnetization away from the long axis into the short axis direction, via magnetoelastic coupling. Strain-induced magnetization changes have previously been demonstrated in ferroelectric/ferromagnetic heterostructures, with excellent fidelity between the ferromagnet and the ferroelectric domains, but these experiments were limited to essentially dc frequencies. Both magneto-optical Kerr effect and polarized neutron reflectivity confirm that the traveling strain wave does rotate the magnetization awaymore » from the long axis direction and both yield quantitatively similar values for the rotated magnetization. An investigation of the behavior of short axis magnetization with increasing strain wave amplitude on a series of samples with variable edge roughness suggests that the magnetization reorientation that is seen proceeds solely via coherent rotation. Polarized neutron reflectivity data provide direct experimental evidence for this model. This is consistent with expectations that domain wall motion cannot track the rapidly varying strain.« less

Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications

PubMed Central

Sun, Enwei; Cao, Wenwu

2014-01-01

In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, domain engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in the Appendix. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged domain walls. PMID:25061239

Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications.

PubMed

Sun, Enwei; Cao, Wenwu

2014-08-01

In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1- x )Pb(Mg 1/3 Nb 2/3 )O 3 - x PbTiO 3 (PMN-PT), (1- x )Pb(Zn 1/3 Nb 2/3 )O 3 - x PbTiO 3 (PZN-PT) and (1- x - y )Pb(In 1/2 Nb 1/2 )O 3 - y Pb(Mg 1/3 Nb 2/3 )O 3 - x PbTiO 3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr 1- x Ti x O 3 (PZT) ceramics, the piezoelectric coefficient d 33 is increased by a factor of 5 and the electromechanical coupling factor k 33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, domain engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in the Appendix. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged domain walls.

Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

NASA Astrophysics Data System (ADS)

Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

2017-01-01

Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational results are compared with complementary experiments, where good agreement is obtained.

A study approach on ferroelectric domains in BaTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rocha, L.S.R.; Cavalcanti, C.S.

Atomic Force Acoustic Microscopy (AFAM) and Piezoresponse Force Microscopy (PFM) were used to study local elastic and electromechanical response in BaTiO{sub 3} ceramics. A commercial multi-mode Scanning Probe Microscopy (SPM) and AFAM mode to image contact stiffness were employed to accomplish the aforementioned purposes. Stiffness parameters along with Young's moduli and piezo coefficients were quantitatively determined. PFM studies were based on electrostatic and electromechanical response from localized tip-surface contact. Comparison was made regarding the Young's moduli obtained by AFAM and PFM. In addition, phase and amplitude images were analyzed based on poling behavior, obtained via the application of − 10more » V to + 10 V local voltage. - Highlights: •Nanoscale behavior of piezo domains in BaTiO{sub 3} ferroelectric materials •Use of Atomic Force Acoustic Microscopy (AFAM) and Piezo Force Microscopy (PFM) •Local elastic and electromechanical response in BaTiO{sub 3} ceramics •The young's moduli obtained from AFAM and PFM.« less

A strong electro-optically active lead-free ferroelectric integrated on silicon

NASA Astrophysics Data System (ADS)

Abel, Stefan; Stöferle, Thilo; Marchiori, Chiara; Rossel, Christophe; Rossell, Marta D.; Erni, Rolf; Caimi, Daniele; Sousa, Marilyne; Chelnokov, Alexei; Offrein, Bert J.; Fompeyrine, Jean

2013-04-01

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of reff=148 pm V-1, which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

Polarization fatigue in ferroelectric Pb(Zr0.52Ti0.48)O3-SrBi2Nb2O9 ceramics

NASA Astrophysics Data System (ADS)

Namsar, Orapim; Pojprapai, Soodkhet; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2015-09-01

Ferroelectric fatigue induced by cyclic electric loading of the (1- x)PZT- xSBN ceramics (0.1 ≤ x ≤ 0.3) have been investigated in comparison with pure PZT and SBN ceramics. The results showed that pure PZT ceramic possessed severe polarization fatigue after long bipolar switching pulses. This was mainly attributed to the appearance of microstructural damage at the near-electrode regions. Whereas, pure SBN ceramic exhibited no fatigue at least up to 1 × 106 switching cycles. The fatigue-free behavior of SBN ceramics was due primarily to weak domain wall pinning. PZT-SBN ceramics showed less polarization fatigue up to 1 × 106 switching cycles than pure PZT. This could be attributed to their low oxygen vacancy concentration. Therefore, this new ceramic PZT-SBN system seems to be an alternative material for replacing PZT in ferroelectric memory applications. [Figure not available: see fulltext.

Electric-field control of local ferromagnetism using a magnetoelectric multiferroic.

PubMed

Chu, Ying-Hao; Martin, Lane W; Holcomb, Mikel B; Gajek, Martin; Han, Shu-Jen; He, Qing; Balke, Nina; Yang, Chan-Ho; Lee, Donkoun; Hu, Wei; Zhan, Qian; Yang, Pei-Ling; Fraile-Rodríguez, Arantxa; Scholl, Andreas; Wang, Shan X; Ramesh, R

2008-06-01

Multiferroics are of interest for memory and logic device applications, as the coupling between ferroelectric and magnetic properties enables the dynamic interaction between these order parameters. Here, we report an approach to control and switch local ferromagnetism with an electric field using multiferroics. We use two types of electromagnetic coupling phenomenon that are manifested in heterostructures consisting of a ferromagnet in intimate contact with the multiferroic BiFeO(3). The first is an internal, magnetoelectric coupling between antiferromagnetism and ferroelectricity in the BiFeO(3) film that leads to electric-field control of the antiferromagnetic order. The second is based on exchange interactions at the interface between a ferromagnet (Co(0.9)Fe(0.1)) and the antiferromagnet. We have discovered a one-to-one mapping of the ferroelectric and ferromagnetic domains, mediated by the colinear coupling between the magnetization in the ferromagnet and the projection of the antiferromagnetic order in the multiferroic. Our preliminary experiments reveal the possibility to locally control ferromagnetism with an electric field.

Electric-field control of local ferromagnetism using a magnetoelectric multiferroic

NASA Astrophysics Data System (ADS)

Chu, Ying-Hao; Martin, Lane W.; Holcomb, Mikel B.; Gajek, Martin; Han, Shu-Jen; He, Qing; Balke, Nina; Yang, Chan-Ho; Lee, Donkoun; Hu, Wei; Zhan, Qian; Yang, Pei-Ling; Fraile-Rodríguez, Arantxa; Scholl, Andreas; Wang, Shan X.; Ramesh, R.

2008-06-01

Multiferroics are of interest for memory and logic device applications, as the coupling between ferroelectric and magnetic properties enables the dynamic interaction between these order parameters. Here, we report an approach to control and switch local ferromagnetism with an electric field using multiferroics. We use two types of electromagnetic coupling phenomenon that are manifested in heterostructures consisting of a ferromagnet in intimate contact with the multiferroic BiFeO3. The first is an internal, magnetoelectric coupling between antiferromagnetism and ferroelectricity in the BiFeO3 film that leads to electric-field control of the antiferromagnetic order. The second is based on exchange interactions at the interface between a ferromagnet (Co0.9Fe0.1) and the antiferromagnet. We have discovered a one-to-one mapping of the ferroelectric and ferromagnetic domains, mediated by the colinear coupling between the magnetization in the ferromagnet and the projection of the antiferromagnetic order in the multiferroic. Our preliminary experiments reveal the possibility to locally control ferromagnetism with an electric field.

Materials being simultaneously ferroelectric, ferromagnetic, ferrotoroidic and ferroelastic

NASA Astrophysics Data System (ADS)

Schmid, Hans

2001-03-01

For the simultaneous occurrence of ferroelectric, ferromagnetic, ferrotoroidic and ferroelastic properties in the same phase, certain stringent symmetry and structural requirements have to be met. Among the 122 Shubnikov point groups 31 are allowing a spontaneous polarization, 31 a spontaneous magnetization and 31 a spontaneous toroidal moment, but only 9 groups allow all three types of vector property at the same time(H. Schmid, Ferroelectrics, in press). In practice this number is further reduced to 6 groups which are permitting "weak ferromagnetism", the most probable type of ferromagnetism found in ferroelectrics with magnetic superexchange interaction nets. The additional occurrence of ferroelasticity is possible for certain prototype phase/ferroic phase pairs of point group (= "Aizu species") only. In addition, one of the mentioned 9 point groups excludes ferroelasticity and allows a co-elastic phase transition only. - The presence or absence of full or partial coupling between the named primary ferroic spontaneous quantities and the resulting possibilities of coupled or non-coupled ferroic domain switching and reorientation are also ruled by the type of species(H. Schmid, Ferroelectrics, 221, 9-17 (1999)). - Apart from a few exceptions, multiferroic phases being simultaneously ferroelectric, ferromagnetic, ferrotoroidic and ferroelastic, are so far well established in the crystal family of boracites M_3B_7O_13X only, where M stands for a bivalent 3d-transition metal ion and X for an ion of the halogens Cl, Br or I(H. Schmid, Ferroelectrics, 162, 317-338 (1994)). - A toroidal moment changes sign both under time reversal and space inversion and has the same symmetry as current density, anapole moment, velocity, etc. First experimental evidence of the presence of a spontaneous toroidal moment in boracites is suggested by phenomenological theory on the basis of measured anomalies of the linear magnetoelectric effect(D.G. Sannikov, Ferroelectrics, 219, 177 (1998)). - For symmetry reasons the above mentioned 9 common point groups necessarily allow all secondary ferroic crystal physical effects (e.g. the linear magnetoelectric, electrotoroidic, magnetotoroidic effects) and all tertiary ferroic crystal physical effects (e.g. the magnetobielectric, electrobimagnetic and piezomagnetoelectric effect) (H. Schmid, Ferroelectrics, in press ),(H. Schmid, in : Complex Mediums, A. Lakhtakia, W.S. Weiglhofer, R.F. Messier, Eds, Proc. of SPIE. 4097, 12-24 (2000)).

Imaging the Dynamics of the Ferroelectric Stripe Phase Near a Field-Driven Phase Transition in Bismuth Ferrite

NASA Astrophysics Data System (ADS)

Laanait, Nouamane; Li, Qian; Zhang, Zhan; Kalinin, Sergei

Electric field-driven phase transitions in multiferroic systems such as Bismuth Ferrite could potentially host interesting domain dynamics due to the coexistence of multiple order parameters. Structural imaging of these dynamics under a host of elastic and electric boundary conditions is therefore of interest. Here, we present X-ray diffraction microscopy (XDM) studies of the domain wall dynamics in a bismuth ferrite thin-film near the field-driven transition from rhombohedral to monoclinic (R to M). XDM is a novel full-field imaging technique that uses Bragg diffraction contrast to image structural configurations with sub-100nm lateral resolutions and fast acquisition times (milliseconds to seconds per image). We find that under electric fields 100 kV/cm, a bismuth ferrite thin-film (100 nm BiFeO3/DyScO3 (110)) undergoes a structural phase transition but that this new phase (M) is pinned by the preexisting ferroelectric/ferroelastic stripe phase (R). At higher fields ( 300 kV/cm), we observe unusually slow domain wall dynamics in the stripe phase, consisting of periodicity doubling, domain wall roughening and crowding. These observed ferroelastic domain wall spatial dynamics are weakly constrained by the crystal symmetry of the orthorhombic substrate but exhibit nonlinear dynamics more commonly associated with disordered nematic systems. This work was supported by the Eugene P. Wigner Fellowship program at Oak Ridge National Laboratory, a U.S. Department of Energy facility.

Multiphase nanodomains in a strained BaTiO3 film on a GdScO3 substrate

NASA Astrophysics Data System (ADS)

Kobayashi, Shunsuke; Inoue, Kazutoshi; Kato, Takeharu; Ikuhara, Yuichi; Yamamoto, Takahisa

2018-02-01

Controlling the crystal structure of ferroelectric materials via epitaxial strain, which is a well-known technique in strain engineering, can lead to the formation of unique domain structures generating non-intrinsic phenomena such as electronic conductivity, photovoltages, and enhanced piezoelectric characteristics. Strained BaTiO3 films are promising ferroelectric materials as theoretical modeling predicts that different domain morphologies can introduce additional properties not observed in conventional BaTiO3 ceramics. To rationally design materials for practical application, a thorough understanding of the formation mechanisms and stabilities of different domain structures in strained BaTiO3 films is required. However, there have been very few experimental reports on this topic, and details about the domain structures in strained BaTiO3 films are currently lacking. In this paper, we report multiphase nanodomains in a strained BaTiO3 film deposited on an orthorhombic GdScO3 substrate. The phase-transition behavior of the strained BaTiO3 film reveals that it contains multiple phases at room temperature; the film first undergoes a phase-transition upon heating at around 550 K, and then a paraelectric phase forms at temperatures above 690 K. A picometer-scale analysis of the Ti ion displacements, using an advanced scanning transmission electron microscopy technique, is used to characterize the complex multiphase nanodomains, providing useful insights into the control of domain structures in BaTiO3 films by applying epitaxial strain.

Specific Features of the Domain Structure of BaTiO3 Crystals during Thermal Heating and Cooling

NASA Astrophysics Data System (ADS)

Kiselev, D. A.; Ilina, T. S.; Malinkovich, M. D.; Sergeeva, O. N.; Bolshakova, N. N.; Semenova, E. M.; Kuznetsova, Yu. V.

2018-04-01

This paper presents the results of the study of the domain structure of barium titanate crystals in a wide temperature range including the Curie point ( T C) using the polarization-optical method in the reflected light and the force microscopy of the piezoelectric response. It is shown that a new a-c domain structure forms during cyclic heating of the crystal above T C and subsequent cooling to the ferroelectric phase. The role of uncompensated charges appeared on the crystal surface during the phase transition and their influence on the formation of the domain structure during cooling are discussed.

Domain Wall Evolution in Phase Transforming Oxides

DTIC Science & Technology

2015-01-14

configumtions under driving forces (e.g. changes in temperature and electric fields) in an effort to: 1) understand the underlying linkage between -1...configurations under driving forces (e.g. changes in temperature and electric fields) in an effort to: 1) understand the underlying linkage between...Extensive domain wall motion and deaging resistance in morphotropic 0.55Bi(Ni1/2Ti1/2)O3–0.45PbTiO3 polycrystalline ferroelectrics, Applied Physics Letters

A novel boundary layer sensor utilizing domain switching in ferroelectric liquid crystals

NASA Technical Reports Server (NTRS)

Parmar, D. S.

1991-01-01

This paper describes the design and the principles of operation of a novel sensor for the optical detection of a shear stress field induced by air or gas flow on a rigid surface. The detection relies on the effects of shear-induced optical switching in ferroelectric liquid crystals. It is shown that the method overcomes many of the limitations of similar measuring techniques including those using cholesteric liquid crystals. The present method offers a preferred alternative for flow visualization and skin friction measurements in wind-tunnel experiments on laminar boundary layer transition investigations. A theoretical model for the optical response to shear stress is presented together with a schematic diagram of the experimental setup.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

NASA Astrophysics Data System (ADS)

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-01

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10-9 A/cm2 at a gate voltage of - 3 V.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

PubMed

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-27

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd) 4 Ti 3 O 12 films as insulator, and HfO 2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO 2 defect control layer shows a low leakage current density of 3.1 × 10 -9  A/cm 2 at a gate voltage of - 3 V.

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

PubMed

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Domain switching in single-phase multiferroics

NASA Astrophysics Data System (ADS)

Jia, Tingting; Cheng, Zhenxiang; Zhao, Hongyang; Kimura, Hideo

2018-06-01

Multiferroics are a time-honoured research subject by reason for their tremendous application potential in the information industry, such as in multi-state information storage devices and new types of sensors. An outburst of studies on multiferroicity has been witnessed in the 21st century, although this field has a long research history since the 19th century. Multiferroicity has now become one of the hottest research topics in condensed matter physics and materials science. Numerous efforts have been made to investigate the cross-coupling phenomena among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, and ferroelasticity, especially the coupling between electric and magnetic orderings that would account for the magnetoelectric (ME) effect in multiferroic materials. The magnetoelectric properties and coupling behavior of single phase multiferroics are dominated by their domain structures. It was also noted that, however, the multiferroic materials exhibit very complicated domain structures. Studies on domain structure characterization and domain switching are a crucial step in the exploration of approaches to the control and manipulation of magnetic (electric) properties using an electric (magnetic) field or other means. In this review, following a concise outline of our current basic knowledge on the magnetoelectric (ME) effect, we summarize some important research activities on domain switching in single-phase multiferroic materials in the form of single crystals and thin films, especially domain switching behavior involving strain and the related physics in the last decade. We also introduce recent developments in characterization techniques for domain structures of ferroelectric or multiferroic materials, which have significantly advanced our understanding of domain switching dynamics and interactions. The effects of a series of issues such as electric field, magnetic field, and stress effects on domain switching are been discussed as well. It is intended that an integrated viewpoint of these issues, as provided here, will further motivate synergistic activities between the various research groups and industry towards the development and characterization of multiferroic materials.

High-resolution 2-D Bragg diffraction reveal heterogeneous domain transformation behavior in a bulk relaxor ferroelectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramanick, Abhijit, E-mail: apramani@cityu.edu.hk; Stoica, Alexandru D.; An, Ke

2016-08-29

In-situ measurement of fine-structure of neutron Bragg diffraction peaks from a relaxor single-crystal using a time-of-flight instrument reveals highly heterogeneous mesoscale domain transformation behavior under applied electric fields. It is observed that only ∼25% of domains undergo reorientation or phase transition contributing to large average strains, while at least 40% remain invariant and exhibit microstrains. Such insights could be central for designing new relaxor materials with better performance and longevity. The current experimental technique can also be applied to resolve complex mesoscale phenomena in other functional materials.

High-resolution 2-D Bragg diffraction reveal heterogeneous domain transformation behavior in a bulk relaxor ferroelectric

DOE PAGES

Pramanick, Abhijit; Stoica, Alexandru D.; An, Ke

2016-09-02

In-situ measurement of fine-structure of neutron Bragg diffraction peaks from a relaxor single-crystal using a time-of-flight instrument reveals highly heterogeneous mesoscale domain transformation behavior under applied electric fields. We observed that only 25% of domains undergo reorienta- tion or phase transition contributing to large average strains, while at least 40% remain invariant and exhibit microstrains. Such insights could be central for designing new relaxor materials with better performance and longevity. The current experimental technique can also be applied to resolve com- plex mesoscale phenomena in other functional materials.

Nonlinear antiferroelectric-like capacitance-voltage curves in ferroelectric BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Jiang, A. Q.; Zhang, D. W.; Tang, T. A.

2013-07-01

The ferroelectric capacitance is usually nonlinear against increasing/decreasing voltage in sweeping time longer than 1 s and achieves a maximum value at around a coercive voltage within each loop. With the improved short-pulse measurements, we estimated the differential capacitance of ferroelectric Au/BiFeO3/LaNiO3/SrTiO3 thin-film capacitors from a nanosecond discharging current induced by a delta voltage after a stressing voltage pulse with widths of 500 ns-50 ms. With the shortening of the voltage sweeping time, we clearly observed two capacitance maxima from each branch of a capacitance-voltage (C-V) loop, reminiscent of an antiferroelectric behavior. After transformation of nanosecond domain switching current transients under pulses into polarization-voltage hysteresis loops, we further measured time dependent polarization retention as well as imprint in the range of 100 ns-1 s. Both positive and negative polarizations decay exponentially at characteristic times of 2.25 and 198 μs, suggesting the coexistence of preferred domains pointing to top and bottom electrodes in most epitaxial films. This exponential time dependence is similar to the dielectric degradation under a dc voltage, and the polarization retention can be improved through long-time opposite voltage stressing. With this improvement, the additional antiferroelectric-like dielectric maximum within each branch of a C-V loop disappears. This experiment provides the strong evidence of the effect of time-dependent charge injection on polarization retention and dielectric degradation.

Free-electron gas at charged domain walls in insulating BaTiO3

PubMed Central

Sluka, Tomas; Tagantsev, Alexander K.; Bednyakov, Petr; Setter, Nava

2013-01-01

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device. Theory predicts the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas. Here we show this phenomenon experimentally in charged domain walls of the prototypical ferroelectric BaTiO3. Their steady metallic-type conductivity, 109 times that of the parent matrix, evidence the presence of stable degenerate electron gas, thus adding mobility to functional interfaces. PMID:23651996

Strategies for gallium removal after focused ion beam patterning of ferroelectric oxide nanostructures

NASA Astrophysics Data System (ADS)

Schilling, A.; Adams, T.; Bowman, R. M.; Gregg, J. M.

2007-01-01

As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed material. These platelets are thought to be gallium oxide. Etching using nitric and hydrochloric acids had no effect on the gallium-rich platelets. Effective platelet removal involved thermal annealing at 700 °C for 1 h in a vacuum followed by 1 h in oxygen, and then a post-annealing low-power plasma clean in an Ar/O atmosphere. Similar processing is likely to be necessary for the full recovery of post FIB-milled nanostructures in oxide ceramic systems in general.

Coupled domain wall motion, lattice strain and phase transformation in morphotropic phase boundary composition of PbTiO 3-BiScO 3 piezoelectric ceramic

DOE PAGES

Khatua, Dipak Kumar; V., Lalitha K.; Fancher, Chris M.; ...

2016-10-18

High energy synchrotron X-ray diffraction, in situ with electric field, was carried out on the morphotropic phase boundary composition of the piezoelectric alloy PbTiO 3-BiScO 3. We demonstrate a strong correlation between ferroelectric-ferroelastic domain reorientation, lattice strain and phase transformation. Lastly, we also show the occurrence of the three phenomena and persistence of their correlation in the weak field regime.

A scaling law for distinct electrocaloric cooling performance in low-dimensional organic, relaxor and anti-ferroelectrics.

PubMed

Shi, Yuping; Huang, Limin; Soh, Ai Kah; Weng, George J; Liu, Shuangyi; Redfern, Simon A T

2017-09-11

Electrocaloric (EC) materials show promise in eco-friendly solid-state refrigeration and integrable on-chip thermal management. While direct measurement of EC thin-films still remains challenging, a generic theoretical framework for quantifying the cooling properties of rich EC materials including normal-, relaxor-, organic- and anti-ferroelectrics is imperative for exploiting new flexible and room-temperature cooling alternatives. Here, we present a versatile theory that combines Master equation with Maxwell relations and analytically relates the macroscopic cooling responses in EC materials with the intrinsic diffuseness of phase transitions and correlation characteristics. Under increased electric fields, both EC entropy and adiabatic temperature changes increase quadratically initially, followed by further linear growth and eventual gradual saturation. The upper bound of entropy change (∆S max ) is limited by distinct correlation volumes (V cr ) and transition diffuseness. The linearity between V cr and the transition diffuseness is emphasized, while ∆S max  = 300 kJ/(K.m 3 ) is obtained for Pb 0.8 Ba 0.2 ZrO 3 . The ∆S max in antiferroelectric Pb 0.95 Zr 0.05 TiO 3 , Pb 0.8 Ba 0.2 ZrO 3 and polymeric ferroelectrics scales proportionally with V cr -2.2 , owing to the one-dimensional structural constraint on lattice-scale depolarization dynamics; whereas ∆S max in relaxor and normal ferroelectrics scales as ∆S max ~ V cr -0.37 , which tallies with a dipolar interaction exponent of 2/3 in EC materials and the well-proven fractional dimensionality of 2.5 for ferroelectric domain walls.

Correlation between piezoresponse nonlinearity and hysteresis in ferroelectric crystals at nanoscale

DOE PAGES

Kalinin, Sergei V.; Jesse, Stephen; Yang, Yaodong; ...

2016-04-27

Here, the nonlinear response of a ferroic to external fields has been studied for decades, garnering interest for both understanding fundamental physics, as well as technological applications such as memory devices. Yet, the behavior of ferroelectrics at mesoscopic regimes remains poorly understood, and the scale limits of theories developed for macroscopic regimes are not well tested experimentally. Here, we test the link between piezo-nonlinearity and local piezoelectric strain hysteresis, via AC-field dependent measurements in conjunction with first order reversal curve (FORC) measurements on (K,Na)NbO 3 crystals with band-excitation piezoelectric force microscopy. The correlation coefficient between nonlinearity amplitude and the FORCmore » of the polarization switching shows a clear decrease in correlation with increasing AC bias, suggesting the impact of domain wall clamping on the DC measurement case. Further, correlation of polynomial fitting terms from the nonlinear measurements with the hysteresis loop area reveals that the largest correlations are reserved for the quadratic terms, which is expected for irreversible domain wall motion contributions that impact both piezoelectric behavior as well as minor loop formation. These confirm the link between local piezoelectric nonlinearity, domain wall motion and minor loop formation, and suggest that existing theories (such as Preisach) are applicable at these length scales, with associated implications for future nanoscale devices.« less

Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

NASA Astrophysics Data System (ADS)

Fang, Huajing; Yan, Qingfeng; Geng, Chong; Chan, Ngai Yui; Au, Kit; Yao, Jianjun; Ng, Sheung Mei; Leung, Chi Wah; Li, Qiang; Guo, Dong; Wa Chan, Helen Lai; Dai, Jiyan

2016-01-01

Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ˜62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

Anomalous domain inversion in LiNbO3 single crystals investigated by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Lilienblum, M.; Soergel, E.

2011-09-01

Ferroelectric domains were written in lithium niobate (LiNbO3) single crystals by applying voltage pulses to the tip of a scanning force microscope. The generated domains are subsequently imaged by piezoresponse force microscopy. As it has been previously observed not only full domains but also doughnut-shaped ones arise from tip-based domain formation. In this contribution, we present our experiments which were carried out with 10-20 μm thin LiNbO3 single crystals. We show that by choosing appropriate writing parameters, domains of predetermined shape (full or doughnut) can be reliably generated. In addition to the duration and the amplitude of the voltage pulse the moment of the retraction of the tip from the sample surface was found to be a crucial parameter for reproducible domain formation.

Ferroelectric domain building blocks for photonic and nonlinear optical microstructures in LiNbO3

NASA Astrophysics Data System (ADS)

Zisis, G.; Ying, C. Y. J.; Soergel, E.; Mailis, S.

2014-03-01

The ability to manipulate the size and depth of poling inhibited domains, which are produced by UV laser irradiation of the +z face of lithium niobate crystals followed by electric field poling, is demonstrated. It is shown that complex domain structures, much wider than the irradiating laser spot, can be obtained by partially overlapping the subsequent UV laser irradiated tracks. The result of this stitching process is one uniform domain without any remaining trace of its constituent components thus increasing dramatically the utility of this method for the fabrication of surface microstructures as well as periodic and aperiodic domain lattices for nonlinear optical and surface acoustic wave applications. Finally, the impact of multi exposure on the domain characteristics is also investigated indicating that some control over the domain depth can be attained.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory.

PubMed

Ng, Tse Nga; Schwartz, David E; Lavery, Leah L; Whiting, Gregory L; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.

Extraction and characterization of mixed phase KNO2-KNO3 nanocrystals derived from flat-leaf green spinach

NASA Astrophysics Data System (ADS)

Hazarika, S.; Mohanta, D.

2013-01-01

Naturally available green spinach, which is a rich source of potassium, was used as the key ingredient to extract mixed-phase ferroelectric crystals of nitrite and nitrate derivatives (KNO2 + KNO3). The KNO3 phase was found to be dominant for higher pH values, as revealed by the x-ray diffraction patterns. The characteristic optical absorption spectra exhibited intra-band π-π* electronic transitions, whereas Fourier transform infrared spectra exhibited characteristic N-O stretching vibrations. Differential scanning calorimetry revealed a broad endothermic peak at ˜121.8 °C, highlighting a transition from phase II to I via phase III of KNO3. Obtaining nanoscale ferroelectrics via the adoption of green synthesis is economically viable for large-scale production and possible application in ferroelectric elements/devices.

Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y., E-mail: yxc238@psu.edu; Randall, C. A.; Chen, L. Q.

2014-05-05

A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO{sub 3}/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO{sub 3} containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from −1.0 to 1.0 V at 25 °C. Our simulation clearly shows rectifying I-V response with rectification ratios amount tomore » 10{sup 2}. The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction.« less

Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO3 ceramics for dielectric tunable device application.

PubMed

Huang, Xian-Xiong; Zhang, Tian-Fu; Tang, Xin-Gui; Jiang, Yan-Ping; Liu, Qiu-Xiang; Feng, Zu-Yong; Zhou, Qi-Fa

2016-09-15

The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr0.7Pb0.3TiO3 (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lummen, Tom T. A.; Leung, J.; Kumar, Amit

The design of new or enhanced functionality in materials is traditionally viewed as requiring the discovery of new chemical compositions through synthesis. Large property enhancements may however also be hidden within already well-known materials, when their structural symmetry is deviated from equilibrium through a small local strain or field. Here, the discovery of enhanced material properties associated with a new metastable phase of monoclinic symmetry within bulk KNbO 3 is reported. This phase is found to coexist with the nominal orthorhombic phase at room temperature, and is both induced by and stabilized with local strains generated by a network ofmore » ferroelectric domain walls. While the local microstructural shear strain involved is only ≈0.017%, the concurrent symmetry reduction results in an optical second harmonic generation response that is over 550% higher at room temperature. Moreover, the meandering walls of the low-symmetry domains also exhibit enhanced electrical conductivity on the order of 1 S m -1. In conclusion, this discovery reveals a potential new route to local engineering of significant property enhancements and conductivity through symmetry lowering in ferroelectric crystals.« less

Giant elastic tunability in strained BiFeO 3 near an electrically induced phase transition

DOE PAGES

Yu, Pu; Vasudevan, Rama K.; Tselev, Alexander; ...

2015-11-24

Elastic anomalies are signatures of phase transitions in condensed matters and have traditionally been studied using various techniques spanning from neutron scattering to static mechanical testing. Here, using band-excitation elastic/piezoresponse spectroscopy, we probed sub-MHz elastic dynamics of a tip bias-induced rhombohedral–tetragonal phase transition of strained (001)-BiFeO 3 (rhombohedral) ferroelectric thin films from ~10 3 nm 3 sample volumes. Near this transition, we observed that the Young's modulus intrinsically softens by over 30% coinciding with 2-3 folds enhancement of local piezoresponse. Coupled with phase-field modeling, we also addressed the influence of polarization switching and mesoscopic structural heterogeneities (e.g., domain walls) onmore » the kinetics of this phase transition, thereby providing fresh insights into the morphotropic phase boundary (MPB) in ferroelectrics. Moreover, the giant electrically tunable elastic stiffness and corresponding electromechanical properties observed here suggest potential applications of BiFeO 3 in next-generation frequency-agile electroacoustic devices, based on utilization of the soft modes underlying successive ferroelectric phase transitions.« less

Active subspace uncertainty quantification for a polydomain ferroelectric phase-field model

NASA Astrophysics Data System (ADS)

Leon, Lider S.; Smith, Ralph C.; Miles, Paul; Oates, William S.

2018-03-01

Quantum-informed ferroelectric phase field models capable of predicting material behavior, are necessary for facilitating the development and production of many adaptive structures and intelligent systems. Uncertainty is present in these models, given the quantum scale at which calculations take place. A necessary analysis is to determine how the uncertainty in the response can be attributed to the uncertainty in the model inputs or parameters. A second analysis is to identify active subspaces within the original parameter space, which quantify directions in which the model response varies most dominantly, thus reducing sampling effort and computational cost. In this investigation, we identify an active subspace for a poly-domain ferroelectric phase-field model. Using the active variables as our independent variables, we then construct a surrogate model and perform Bayesian inference. Once we quantify the uncertainties in the active variables, we obtain uncertainties for the original parameters via an inverse mapping. The analysis provides insight into how active subspace methodologies can be used to reduce computational power needed to perform Bayesian inference on model parameters informed by experimental or simulated data.

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

PubMed

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

2014-12-24

The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 Film Thickness

DOE PAGES

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; ...

2014-12-24

The energy storage properties of Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linearmore » dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.« less

Nd and Ru co-doped bismuth titanate polycrystalline thin films with improved ferroelectric properties

NASA Astrophysics Data System (ADS)

Sahoo, Kishor Kumar; Singh Rajput, Shailendra; Gupta, Rajeev; Roy, Amritendu; Garg, Ashish

2018-02-01

We report the ferroelectric properties of pulsed laser deposited thin films of Nd and Ru co-doped bismuth titanate (Bi4-x Nd x Ti3-y Ru y O12). Structural analysis of the as-grown films, using x-ray diffraction, showed a single-phase formation with a polycrystalline structure. In comparison to un-doped and Nd-doped films, ferroelectric measurements on co-doped films demonstrated improved properties with remnant polarization (P r) ~ 12.5 µC cm-2 and an enhanced electrical fatigue life for Bi3.25Nd0.75Ti2.8Ru0.20O12 films. The enhancement in remanent polarization is attributed to microscopic changes, such as local structural distortion and the modification of the dynamical/effective charges on constituent ions due to chemical strain upon simultaneous Bi- (A) and Ti- (B) site doping with Nd and Ru, which has a far stronger effect than only A-site doping with Nd. Piezoresponse force microscopy further confirmed the polar structure and domain switching at nanoscale. The films exhibit small yet finite magnetization at 10 K resulting from strain.

Pyroelectric property of SrTiO3/Si ferroelectric-semiconductor heterojunctions near room temperature

NASA Astrophysics Data System (ADS)

Bai, Gang; Wu, Dongmei; Xie, Qiyun; Guo, Yanyan; Li, Wei; Deng, Licheng; Liu, Zhiguo

2015-12-01

A nonlinear thermodynamic formalism is developed to calculate the pyroelectric property of epitaxial single domain SrTiO3/Si heterojunctions by taking into account the thermal expansion misfit strain at different temperatures. It has been demonstrated that the crucial role was played by the contribution associated with the structure order parameter arising from the rotations of oxygen octahedral on pyroelectricity. A dramatic decrease in the pyroelectric coefficient due to the strong coupling between the polarization and the structure order parameter is found at ferroelectric TF1-TF2 phase transition. At the same time, the thermal expansion mismatch between film and substrate is also found to provide an additional weak decrease of pyroelectricity. The analytic relationship of the out-of-plane pyroelectric coefficient and dielectric constant of ferroelectric phases by considering the thermal expansion of thin films and substrates has been determined for the first time. Our research provides another avenue for the investigation of the pyroelectric effects of ferroic thin films, especially, such as antiferroelectric and multiferroic materials having two or more order parameters.

Giant elastic tunability in strained BiFeO3 near an electrically induced phase transition

PubMed Central

Li, Q; Cao, Y.; Yu, P.; Vasudevan, R. K.; Laanait, N.; Tselev, A.; Xue, F.; Chen, L. Q.; Maksymovych, P.; Kalinin, S. V.; Balke, N.

2015-01-01

Elastic anomalies are signatures of phase transitions in condensed matters and have traditionally been studied using various techniques spanning from neutron scattering to static mechanical testing. Here, using band-excitation elastic/piezoresponse spectroscopy, we probed sub-MHz elastic dynamics of a tip bias-induced rhombohedral−tetragonal phase transition of strained (001)-BiFeO3 (rhombohedral) ferroelectric thin films from ∼103 nm3 sample volumes. Near this transition, we observed that the Young's modulus intrinsically softens by over 30% coinciding with two- to three-fold enhancement of local piezoresponse. Coupled with phase-field modelling, we also addressed the influence of polarization switching and mesoscopic structural heterogeneities (for example, domain walls) on the kinetics of this phase transition, thereby providing fresh insights into the morphotropic phase boundary in ferroelectrics. Furthermore, the giant electrically tunable elastic stiffness and corresponding electromechanical properties observed here suggest potential applications of BiFeO3 in next-generation frequency-agile electroacoustic devices, based on the utilization of the soft modes underlying successive ferroelectric phase transitions. PMID:26597483

Two-dimensional multiferroics in monolayer group IV monochalcogenides

NASA Astrophysics Data System (ADS)

Wang, Hua; Qian, Xiaofeng

2017-03-01

Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that two-dimensional (2D) monolayer group IV monochalcogenides including GeS, GeSe, SnS, and SnSe are a class of 2D semiconducting multiferroics with giant strongly-coupled in-plane spontaneous ferroelectric polarization and spontaneous ferroelastic lattice strain that are thermodynamically stable at room temperature and beyond, and can be effectively modulated by elastic strain engineering. Their optical absorption spectra exhibit strong in-plane anisotropy with visible-spectrum excitonic gaps and sizable exciton binding energies, rendering the unique characteristics of low-dimensional semiconductors. More importantly, the predicted low domain wall energy and small migration barrier together with the coupled multiferroic order and anisotropic electronic structures suggest their great potentials for tunable multiferroic functional devices by manipulating external electrical, mechanical, and optical field to control the internal responses, and enable the development of four device concepts including 2D ferroelectric memory, 2D ferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory as well as 2D ferroelectric excitonic photovoltaics.

Evolution of electrical properties and domain configuration of Mn modified Pb(In1/2Nb1/2)O3-PbTiO3 single crystals

NASA Astrophysics Data System (ADS)

Qiao, Huimin; He, Chao; Yuan, Feifei; Wang, Zujian; Li, Xiuzhi; Liu, Ying; Guo, Haiyan; Long, Xifa

2018-04-01

The acceptor doped relaxor-based ferroelectric materials are useful for high power applications such as probes in ultrasound-guided high intensity focused ultrasound therapy. In addition, a high Curie temperature is desired because of wider temperature usage and improved temperature stability. Previous investigations have focused on Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 systems, which have a ultrahigh piezoelectric coefficient and dielectric constant, but a relatively low Curie temperature. It is desirable to study the binary relaxor-based system with a high Curie temperature. Therefore, Pb(In1/2Nb1/2)O3-PbTiO3 (PINT) single crystals were chosen to study the Mn-doped influence on their electrical properties and domain configuration. The evolution of ferroelectric hysteresis loops for doped and virgin samples exhibit the pinning effect in Mn-doped PINT crystals. The relaxation behaviors of doped and virgin samples are studied by fit of the modified Curie-Weiss law and Volgel-Fucher relation. In addition, a short-range correlation length was fitted to study the behavior of polar nanoregions based on the domain configuration obtained by piezoresponse force microscopy. Complex domain structures and smaller short-range correlation lengths (100-150 nm for Mn-doped PINT and >400 nm for pure PINT) were obtained in the Mn-doped PINT single crystals.

Ferroelectricity with Ferromagnetic Moment in Orthoferrites

NASA Astrophysics Data System (ADS)

Tokunaga, Yusuke

2010-03-01

Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

Enhanced ferroelectric polarization and possible morphotrophic phase boundary in PZT-based alloys

DOE PAGES

Parker, David S.; Singh, David; McGuire, Michael A.; ...

2016-05-16

We present a combined theoretical and experimental study of alloys of the high performance piezoelectric PZT (PbZr 0.5Ti 0.5O 3) with BZnT (BiZn 0.5Ti 0.5O 3) and BZnZr (BiZn 0.5Zr 0.5O 3), focusing on atomic displacements, ferroelectric polarization, and elastic stability. From theory we find that the 75-25 PZT-BZnT alloy has substantially larger cation displacements, and hence ferroelectric polarization than the PZT base material, on the tetragonal side of the phase diagram. We also find a possible morphotrophic phase boundary in this system by comparing displacement patterns and optimized c/a ratios. Elastic stability calculations find the structures to be essentiallymore » stable. Lastly, experiments indicate the feasibility of sample synthesis within this alloy system, although measurements do not find significant polarization, probably due to a large coercive field.« less

Enhancement in ferroelectric, pyroelectric and photoluminescence properties in dye doped TGS crystals

NASA Astrophysics Data System (ADS)

Sinha, Nidhi; Goel, Neeti; Singh, B. K.; Gupta, M. K.; Kumar, Binay

2012-06-01

Pure and dye doped (0.1 and 0.2 mol%) Triglycine Sulfate (TGS) single crystals were grown by slow evaporation technique. A pyramidal coloring pattern, along with XRD and FT-IR studies confirmed the dye doping. Decrease in dielectric constant and increase in Curie temperature (Tc) were observed with increasing doping concentration. Low absorption cut off (231 nm) and high optical transparency (>90%) resulting in large band gap was observed in UV-VIS studies. In addition, strong hyper-luminescent emission bands at 350 and 375 nm were observed in which the relative intensity were found to be reversed as a result of doping. In P-E hysteresis loop studies, a higher curie temperature and an improved and more uniform figure of merit over a large region of the ferroelectric phase were observed. The improved dielectric, optical and ferroelectric/pyroelectric properties make the dye doped TGS crystals better candidate for various opto- and piezo-electronics applications.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

PubMed Central

Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

2016-01-01

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

Conduction at domain walls in oxide multiferroics

NASA Astrophysics Data System (ADS)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Conduction at domain walls in oxide multiferroics.

PubMed

Seidel, J; Martin, L W; He, Q; Zhan, Q; Chu, Y-H; Rother, A; Hawkridge, M E; Maksymovych, P; Yu, P; Gajek, M; Balke, N; Kalinin, S V; Gemming, S; Wang, F; Catalan, G; Scott, J F; Spaldin, N A; Orenstein, J; Ramesh, R

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

PubMed Central

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Electrically tunable spatially variable switching in ferroelectric liquid crystal/water system

NASA Astrophysics Data System (ADS)

Choudhary, A.; Coondoo, I.; Prakash, J.; Sreenivas, K.; Biradar, A. M.

2009-04-01

An unusual switching phenomenon in the region outside conducting patterned area in ferroelectric liquid crystal (FLC) containing about 1-2 wt % of water has been observed. The presence of water in the studied heterogeneous system was confirmed by Fourier transform infrared spectroscopy. The observed optical studies have been emphasized on the "spatially variable switching" phenomenon of the molecules in the nonconducting region of the cell. The observed phenomenon is due to diffusion of water between the smectic layers of the FLC and the interaction of the curved electric field lines with the FLC molecules in the nonconducting region.

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

Encoding, training and retrieval in ferroelectric tunnel junctions

NASA Astrophysics Data System (ADS)

Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

2016-05-01

Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

Perspectives on in situ electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Haimei; Zhu, Yimei

In situ transmission electron microscopy (TEM) with the ability to reveal materials dynamic processes with high spatial and temporal resolution has attracted significant interest. The recent advances in in situ methods, including liquid and gas sample environment, pump-probe ultrafast microscopy, nanomechanics and ferroelectric domain switching the aberration corrected electron optics as well as fast electron detector has opened new opportunities to extend the impact of in situ TEM in broad areas of research ranging from materials science to chemistry, physics and biology. Here in this paper, we highlight the development of liquid environment electron microscopy and its applications in themore » study of colloidal nanoparticle growth, electrochemical processes and others; in situ study of topological vortices in ferroelectric and ferromagnetic materials. At the end, perspectives of future in situ TEM are provided.« less

Perspectives on in situ electron microscopy

DOE PAGES

Zheng, Haimei; Zhu, Yimei

2017-03-29

In situ transmission electron microscopy (TEM) with the ability to reveal materials dynamic processes with high spatial and temporal resolution has attracted significant interest. The recent advances in in situ methods, including liquid and gas sample environment, pump-probe ultrafast microscopy, nanomechanics and ferroelectric domain switching the aberration corrected electron optics as well as fast electron detector has opened new opportunities to extend the impact of in situ TEM in broad areas of research ranging from materials science to chemistry, physics and biology. Here in this paper, we highlight the development of liquid environment electron microscopy and its applications in themore » study of colloidal nanoparticle growth, electrochemical processes and others; in situ study of topological vortices in ferroelectric and ferromagnetic materials. At the end, perspectives of future in situ TEM are provided.« less

Ferromagnetic resonance of Ni wires fabricated on ferroelectric LiNbO3 substrate for studying magnetic anisotropy induced by the heterojunction

NASA Astrophysics Data System (ADS)

Yamaguchi, Akinobu; Nakao, Akiko; Ohkochi, Takuo; Yasui, Akira; Kinoshita, Toyohiko; Utsumi, Yuichi; Saiki, Tsunemasa; Yamada, Keisuke

2018-05-01

The electrical ferromagnetic resonance of micro-scale Ni wires with magnetic anisotropy induced by the heterojunction between the Ni layer and ferroelectric single crystalline LiNbO3 substrate was demonstrated by using rectifying effect. The two resonance modes were observed in the Ni wire aligned parallel to the applied magnetic field in plane. The lower resonance frequency mode is considered to correspond to the normal resonance mode with domain resonance, while the higher resonance mode is attributed to the mode which is contributed by the heterojunction between the Ni layer and LiNbO3 substrate. Our results manifest that the rectifying electrical detections are very useful for understating and evaluating the magnetic properties induced by the heterojunction.

Studying the Polarization Switching in Polycrystalline BiFeO3 Films by 2D Piezoresponse Force Microscopy

NASA Astrophysics Data System (ADS)

Jin, Yaming; Lu, Xiaomei; Zhang, Junting; Kan, Yi; Bo, Huifeng; Huang, Fengzhen; Xu, Tingting; Du, Yingchao; Xiao, Shuyu; Zhu, Jinsong

2015-07-01

For rhombohedral multiferroelectrics, non-180° ferroelectric domain switching may induce ferroelastic and/or (anti-)ferromagnetic effect. So the determination and control of ferroelectric domain switching angles is crucial for nonvolatile information storage and exchange-coupled magnetoelectric devices. We try to study the intrinsic characters of polarization switching in BiFeO3 by introducing a special data processing method to determine the switching angle from 2D PFM (Piezoresponse Force Microscopy) images of randomly oriented samples. The response surface of BiFeO3 is first plotted using the piezoelectric tensor got from first principles calculations. Then from the normalized 2D PFM signals before and after switching, the switching angles of randomly oriented BiFeO3 grains can be determined through numerical calculations. In the polycrystalline BiFeO3 films, up to 34% of all switched area is that with original out-of-plane (OP) polarization parallel to the poling field. 71° polarization switching is more favorable, with the area percentages of 71°, 109° and 180° domain switching being about 42%, 29% and 29%, respectively. Our analysis further reveals that IP stress and charge migration have comparable effect on switching, and they are sensitive to the geometric arrangements. This work helps exploring a route to control polarization switching in BiFeO3, so as to realize desirable magnetoelectric coupling.

Impact of substrate on structure and electrical properties in lead-based ferroelectric thin films

NASA Astrophysics Data System (ADS)

Valanoor, Nagarajan Venkatasubramanian

Current trends in semiconductor technology demand that ferroelectric materials be used in thin film form, rather than bulk, for integration and scaling purposes. An inevitable consequence of integration is substrate induced constraint and stress. Sources of this stress are the lattice and thermal mismatch between film and substrate, structural phase transformation which leads to spontaneous strains, and dislocation cores at the film substrate interface. In addition to classical stress relaxation mechanisms all highly tetragonal ferroelectrics relax internal stress via formation of polydomain (90° domains and not 180° domains) structures below the phase transformation, which brings about a change in the microstructure of the film. Hence it is possible to control the resultant microstructure by controlling the degree of polydomain relaxation. Obviously this affects the electrical and electro-mechanical properties and in turn the device performance. The goal of this research is to study this structure-property relationship of ferroelectric thin films where in the structure has been systematically modified by changing the substrate-induced effect. To investigate the effect of the substrate, epitaxial films of PbZr 0.2Ti0.8O3 were grown by pulsed laser deposition (PLD). Epitaxial films reduce the complexities introduced grain boundaries and multiple domain orientations. By systematically changing the thickness the spontaneous strain or c/a ratio can be varied. As a consequence polydomain formation varies as a function of film thickness. Thus this is an effective yet simple method to fully understand the impact of stress on structure-property inter-relationships. The theoretical background for these experiments is first laid out by a thermodynamic analysis of the polydomain formation. It leads to the construction of a domain stability map and indicates a presence of a critical thickness for polydomain formation. This is followed by an investigation of the impact of polydomain formation on quasi-static and dynamic polarization switching. To correlate the material microstructure to switching, an activation field, alpha, is introduced. It is shown theoretically that alpha ∝ (c/a-1)3.5 and a good experimental fit can be obtained. However it is observed that polydomain formation does not impact the electromechanical and dielectric response significantly. It is shown experimentally and theoretically that stress-induced polarization varies only by 10%. Therefore to study the impact of in plane stresses induced by substrate on piezoelectric and dielectric response we chose a "soft" relaxor ferroelectric (RFE) wherein the Curie temperature is close to room temperature. In this case even a small application of stress can change the properties significantly. The relaxor composition chosen was PbMg1/3Nb 2/3O3(90%)-PbTiO3(10%). By systematically changing the substrate and the thickness, stresses in the film the electromechanical constants is varied. High-resolution electron microscopy revealed a distinct change in the microstructure as a function of thickness, and a probable answer as to why thin films show inferior properties compared to bulk materials is proposed. The last part of this thesis focuses on the effect of micro stresses. Two examples are demonstrated where the mechanical forces of interaction between the film and substrate are manipulated on a very local scale. We show that by inducing stresses at local regions one can induce polydomains in film thinner than previously calculated critical thickness, while by removing constraint at local regions we can enhance the d33 co-efficient to values higher than those shown by bulk ceramics.

Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

NASA Astrophysics Data System (ADS)

Zhou, Xiaolan

Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a well suited electrode material that is both conducting, and full strained on the MgAl2O4 substrate is quite rare. We will supply some answers to this unique problem. XRD results show that Ni1-xAlxO1+delta (x=0.3, 0.4 & 0.5) film, although highly mixed with Al2O3, still takes rock-salt structure and is grown very well on the spinel MgAl 2O4 substrate, with perfect crystallization and a smooth surface. Ni0.7Al0.3O1+ delta and Ni 0.6Al0.4O1+ delta are good buffer layers for perovskite film on spinel MgAl2O4 substrate. Ni 0.5Al0.5O1+ delta could also be a good buffer layer. The structural transition from rock-salt to spinel was found at x=0.67. Tensile strain effects from thermal expansion difference of BiFeO3 films were found. Thermal expansion difference caused strain does not change the ferroelectric property greatly, due to film relaxation. BiFeO3 film with NAO buffer exhibit much larger strain.

Disparity of secondary electron emission in ferroelectric domains of YMnO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Shaobo; Deng, S. Q.; Yuan, Wenjuan

2015-07-20

The applications of multiferroic materials require our understanding about the behaviors of domains with different polarization directions. Taking advantage of the scanning electron microscope, we investigate the polar surface of single crystal YMnO{sub 3} sample in secondary electron (SE) mode. By slowing down the scanning speed of electron beam, the negative surface potential of YMnO{sub 3} can be realized, and the domain contrast can be correspondingly changed. Under this experimental condition, with the help of a homemade Faraday cup, the difference of intrinsic SE emission coefficients of antiparallel domains is measured to be 0.12 and the downward polarization domains showmore » a larger SE emission ability. Our results indicate that the total SE emission of this material can be altered by changing the ratio of the antiparallel domains, which provide an avenue for device design with this kind of materials.« less

Effect of electrical and mechanical poling history on domain orientation and piezoelectric properties of soft and hard PZT ceramics

NASA Astrophysics Data System (ADS)

Marsilius, Mie; Granzow, Torsten; Jones, Jacob L.

2011-02-01

The superior piezoelectric properties of all polycrystalline ferroelectrics are based on the extent of non-180° domain wall motion under electrical and mechanical poling loads. To distinguish between 180° and non-180° domain wall motion in a soft-doped and a hard-doped lead zirconate titanate (PZT) ceramic, domain texture measurements were performed using x-ray and neutron diffraction after different loading procedures. Comparing the results to measurements of the remanent strain and piezoelectric coefficient allowed the differentiation between different microstructural contributions to the macroscopic parameters. Both types of ceramic showed similar behavior under electric field, but the hard-doped material was more susceptible to mechanical load. A considerable fraction of the piezoelectric coefficient originated from poling by the preferred orientation of 180° domains.

LiNbO{sub 3}: A photovoltaic substrate for massive parallel manipulation and patterning of nano-objects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carrascosa, M.; García-Cabañes, A.; Jubera, M.

The application of evanescent photovoltaic (PV) fields, generated by visible illumination of Fe:LiNbO{sub 3} substrates, for parallel massive trapping and manipulation of micro- and nano-objects is critically reviewed. The technique has been often referred to as photovoltaic or photorefractive tweezers. The main advantage of the new method is that the involved electrophoretic and/or dielectrophoretic forces do not require any electrodes and large scale manipulation of nano-objects can be easily achieved using the patterning capabilities of light. The paper describes the experimental techniques for particle trapping and the main reported experimental results obtained with a variety of micro- and nano-particles (dielectricmore » and conductive) and different illumination configurations (single beam, holographic geometry, and spatial light modulator projection). The report also pays attention to the physical basis of the method, namely, the coupling of the evanescent photorefractive fields to the dielectric response of the nano-particles. The role of a number of physical parameters such as the contrast and spatial periodicities of the illumination pattern or the particle deposition method is discussed. Moreover, the main properties of the obtained particle patterns in relation to potential applications are summarized, and first demonstrations reviewed. Finally, the PV method is discussed in comparison to other patterning strategies, such as those based on the pyroelectric response and the electric fields associated to domain poling of ferroelectric materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, Aditya; Patel, Satyanarayan; Vaish, Rahul, E-mail: rahul@iitmandi.ac.in

With the advent of modern power electronics, embedded circuits and non-conventional energy harvesting, the need for high performance capacitors is bound to become indispensible. The current state-of-art employs ferroelectric ceramics and linear dielectrics for solid state capacitance. However, lead-free ferroelectric ceramics propose to offer significant improvement in the field of electrical energy storage owing to their high discharge efficiency and energy storage density. In this regards, the authors have investigated the effects of compressive stress as a means of improving the energy storage density of lead-free ferroelectric ceramics. The energy storage density of 0.91(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-0.07BaTiO{sub 3}-0.02(K{sub 0.5}Na{sub 0.5})NbO{submore » 3} ferroelectric bulk ceramic was analyzed as a function of varying levels of compressive stress and operational temperature .It was observed that a peak energy density of 387 mJ.cm{sup -3} was obtained at 100 MPa applied stress (25{sup o}C). While a maximum energy density of 568 mJ.cm{sup -3} was obtained for the same stress at 80{sup o}C. These values are indicative of a significant, 25% and 84%, improvement in the value of stored energy compared to an unloaded material. Additionally, material's discharge efficiency has also been discussed as a function of operational parameters. The observed phenomenon has been explained on the basis of field induced structural transition and competitive domain switching theory.« less

Electrical conduction at domain walls in multiferroic BiFeO3

NASA Astrophysics Data System (ADS)

Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy

2009-03-01

We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.

Stabilization of highly polar BiFeO 3-like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattices

DOE PAGES

Wang, Hongwei; Wen, Jianguo; Miller, Dean; ...

2016-03-14

In ABO 3 perovskites, oxygen octahedron rotations are common structural distortions that can promote large ferroelectricity in BiFeO 3 with an R3c structure [1] but suppress ferroelectricity in CaTiO 3 with a Pbnm symmetry [2]. For many CaTiO3-like perovskites, the BiFeO 3 structure is a metastable phase. Here, we report the stabilization of the highly polar BiFeO 3-like phase of CaTiO 3 in a BaTiO 3/CaTiO 3 superlattice grown on a SrTiO 3 substrate. The stabilization is realized by a reconstruction of oxygen octahedron rotations at the interface from the pattern of nonpolar bulk CaTiO 3 to a different patternmore » that is characteristic of a BiFeO 3 phase. The reconstruction is interpreted through a combination of amplitude-contrast sub-0.1-nm high-resolution transmission electron microscopy and first-principles theories of the structure, energetics, and polarization of the superlattice and its constituents. We further predict a number of new artificial ferroelectric materials demonstrating that nonpolar perovskites can be turned into ferroelectrics via this interface mechanism. Therefore, a large number of perovskites with the CaTiO 3 structure type, which include many magnetic representatives, are now good candidates as novel highly polar multiferroic materials [3].« less

High Frequency Electromechanical Imaging of Ferroelectrics in a Liquid Environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jesse, Stephen; Chu, Ying-Hao; Kalinin, Sergei V

The coupling between electrical and mechanical phenomena is a ubiquitous feature of many information and energy storage materials and devices. In addition to involvement in performance and degradation mechanisms, electromechanical effects underpin a broad spectrum of nanoscale imaging and spectroscopies including piezoresponse force and electrochemical strain microscopies. Traditionally, these studies are conducted under ambient conditions. However, applications related to imaging energy storage and electrophysiological phenomena require operation in a liquid phase and therefore the development of electromechanical probing techniques suitable to liquid environments. Due to the relative high conductivity of most liquids and liquid decomposition at low voltages, the transfermore » of characterization techniques from ambient to liquid is not straightforward. Here we present a detailed study of ferroelectric domain imaging and manipulation in thin film BiFeO{sub 3} using piezoresponse force microscopy in liquid environments as model systems for electromechanical phenomena in general. We explore the use of contact resonance enhancement and the application of multifrequency excitation and detection principles to overcome the experimental problems introduced by a liquid environment. Understanding electromechanical sample characterization in liquid is a key aspect not only for ferroelectric oxides but also for biological and electrochemical sample systems.« less

Effects of crystallization interfaces on irradiated ferroelectric thin films

NASA Astrophysics Data System (ADS)

Brewer, S. J.; Williams, S. C.; Cress, C. D.; Bassiri-Gharb, N.

2017-11-01

This work investigates the role of crystallization interfaces and chemical heterogeneity in the radiation tolerance of chemical solution-deposited lead zirconate titanate (PZT) thin films. Two sets of PZT thin films were fabricated with crystallization performed at (i) every deposited layer or (ii) every three layers. The films were exposed to a range of 60Co gamma radiation doses, between 0.2 and 20 Mrad, and their functional response was compared before and after irradiation. The observed trends indicate enhancements of dielectric, ferroelectric, and piezoelectric responses at low radiation doses and degradation of the same at higher doses. Response enhancements are expected to result from low-dose (≤2 Mrad), ionizing radiation-induced charging of internal interfaces—an effect that results in neutralization of pre-existing internal bias in the samples. At higher radiation doses (>2 Mrad), accumulation and self-ordering of radiation-modified, mobile, oxygen vacancy-related defects contribute to degradation of dielectric, ferroelectric, and piezoelectric properties, exacerbated in the samples with more crystallization layers, potentially due to increased defect accumulation at these internal interfaces. These results suggest that the interaction between radiation and crystallization interfaces is multifaceted—the effects of ionization, domain wall motion, point defect mobility, and microstructure are considered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balke, Nina; Bassiri-Gharb, Nazanin; Lichtensteiger, Céline

Almost two decades beyond the inception of piezoresponse force microscopy (PFM) and the seminal papers by G€uthner and Dransfeld1 and Gruverman et al., the technique has become the prevailing approach for nanoscale functional characterization of polar materials and has been extended to the probing of other electromechanical effects through the advent of electrochemical strain microscopy (ESM). This focus issue celebrates some of the recent advances in the field and offers a wider outlook of polar materials and their overall characterization. In this paper, we cover topics that include discussions of the properties of traditional ferroelectrics, such as lead zirconate titanatemore » (PZT) and lithium niobate, relaxorferroelectrics, as well as more “exotic” ferroelectric oxides such as hafnia, ferroelectric biological matter, and multiferroic materials. Technique-oriented contributions include papers on the coupling of PFM with other characterization methods such as x-ray diffraction (XRD) and superconducting quantum interface device (SQUID), in addition to considerations on the open questions on the electromechanical response in biased scanning probe microscopy (SPM) techniques, including the effects of the laser spot placement on the readout cantilever displacement, the influence of the tip on the creation of the domain shapes, and the impact of ionic and electronic dynamics on the observed nanoscale hysteretic phenomena.« less

Annual Progress Report and Report of Significant Accomplishments. Joint Services Electronics Program of the Edward L. Ginzton Laboratory.

DTIC Science & Technology

1983-08-01

Maccagno, and A. Miller, "Interaction of Acoustic Waves and Ferroelastic Domain Walls," Ferroelectrics (to be published). 3. J. A. Armstrong , et al...34 Preprint (November 1982). Also: Published in Electronics Letters, 18.A 999 (11 November 1982). 3513 S.A. Newton, J.E. Bowers, G. Kotler , Litton Systems, and

Polarization imprint effects on the photovoltaic effect in Pb(Zr,Ti)O3 thin films

NASA Astrophysics Data System (ADS)

Tan, Zhengwei; Tian, Junjiang; Fan, Zhen; Lu, Zengxing; Zhang, Luyong; Zheng, Dongfeng; Wang, Yadong; Chen, Deyang; Qin, Minghui; Zeng, Min; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

2018-04-01

The polarization imprint along with the photovoltaic (PV) effect has been studied in Pt/Pb(Zr0.3Ti0.7)O3/SrRuO3 ferroelectric capacitors. It is shown that the positive DC poling induces the imprint with a downward direction whereas the negative DC poling suppresses the imprint (i.e., rejuvenation). In the polarization up state, the imprinted capacitor exhibits degraded PV properties compared with the rejuvenated one. This may be because the imprint reduces the number of upward domains, thus lowering the driving force for the PV effect. In the polarization down state, however, the rejuvenated capacitor enters the imprinted state spontaneously. This rejuvenation-to-imprint transition can be further aggravated by applying positive voltages and ultraviolet illumination. It is proposed that the domain pinning/depinning, which are associated with the oxygen vacancies and trapped electrons modulated by polarization, voltage, and illumination, may be responsible for the polarization imprint and rejuvenation. Our study therefore sheds light on the correlation between the polarization imprint and the PV effect in the ferroelectrics and also provides some viable suggestions to address the imprint-induced degradation of PV performance.

Spontaneous polarization and pyroelectric effect in the improper ferroelectrics-ferroelastics Gd2(MoO4)3 and Tb2(MoO4)3 at low temperatures

NASA Astrophysics Data System (ADS)

Matyjasik, S.; Shaldin, Yu. V.

2013-11-01

The experimental variations in the spontaneous polarization ΔPs(T) and pyroelectric coefficient γs(T) for Gd2(MoO4)3 (GMO) and Tb2(MoO4)3 (TMO) at low temperatures reported here differ from those for intrinsic ferroelectrics. A fundamental difference is found in the repolarization behavior of samples of GMO and TMO at fixed temperatures of 300 and 4.2 K. While the single domain formation temperature essentially has no effect on the measurements for TMO, a fundamental difference is observed in the case of GMO: single domain formation in the latter at 4.2 K leads to an order of magnitude increase in ΔPs at T > 85 K and distinct anomalies are observed in γs(T), at one of which the pyroelectric coefficient reaches a record peak of 3 × 10-4 C/(m2.K) at T = 25 K. At T = 200 K the pyroelectric coefficients equal -1.45 and -1.8 in units of 10-6 C/(m2.K). Based on these results and taking published data on the rotational structural transformation in the (001) plane and symmetry considerations into account, we propose a crystal physical model for GMO-type improper ferroelectrics consisting of four mesotetrahedra, each of which is made up of three different types (a, b, c) of MoO4 coordination tetrahedra. The physical significance of the pseudodeviator coefficient Q12*, which initiates the phase transition at T > 433 K from one non-centrally symmetric phase (mm2) into another (4¯2m), is discussed in terms of this model.

Non-Debye domain-wall-induced dielectric response in Sr0.61-xCexBa0.39Nb2O6

NASA Astrophysics Data System (ADS)

Kleemann, W.; Dec, J.; Miga, S.; Woike, Th.; Pankrath, R.

2002-06-01

Two different non-Debye dielectric spectra are observed in a polydomain relaxor-ferroelectric Sr0.61-xBa0.39Nb2O6:Ce3+x single crystal in the vicinity of its transition temperature, Tc~320 K. At infralow frequencies the susceptibility varies as χ*~ω-β, β~0.2, and is attributed to an irreversible creep-like viscous motion of domain walls, while logarithmic dispersion due to reversible wall relaxation [T. Nattermann, Y. Shapir, and I. Vilfan, Phys. Rev. B 42, 8577 (1990)] occurs at larger ω.

Dielectric and ferroelectric properties of Ba0.87Ca0.10La0.03Ti1-xSnxO3 lead-free ceramics

NASA Astrophysics Data System (ADS)

Chen, Zhi-hui; Li, Zhi-wei; Fang, Chang; Qiu, Jian-hua; Ding, Jian-ning; Zhu, Wei-qin; Xu, Jiu-jun

2017-12-01

Ba0.87Ca0.10La0.03Ti1-xSnxO3 (BCLTS) piezoelectric lead-free ceramics were fabricated by conventional solid-state sintering process at 1480 °C. The effects of Sn4+ substitution on microstructure and electrical properties of the ceramics were researched. All samples show a pure perovskite structure with no secondary phase, and the coexistence of orthorhombic phase and tetragonal phase in the composition range of x = 0.06-0.10 is identified in the XRD pattern. Average grain size decreases with the increase of Sn content in the BCLTS samples. The BCLTS ceramics exhibit excellent piezoelectric properties and ferroelectric properties with d33 = 501pC/N and kp = 45.6% at x = 0.10, and Pr = 9.87 μC/cm2 at x = 0.06. The analysis on the temperature dependence of dielectric permittivity approved the diffuse relaxor ferroelectric feature for all the BCLTS samples.

Comparative Study of Ferroelectric and Piezoelectric Properties of BNT-BKT-BT Ceramics near the Phase Transition Zone

PubMed Central

Fernandez-Benavides, David Andres; Gutierrez-Perez, Aixa Ibeth; Benitez-Castro, Angelica Maria; Ayala-Ayala, Maria Teresa; Moreno-Murguia, Barbara

2018-01-01

We report a comprehensive comparative study of ferroelectric and piezoelectric properties of BNT-BKT-BT ceramics through the MPB (morphotropic phase boundary) zone, from the rhombohedral to the tetragonal phases in the system (97.5−x)(Bi0.5Na0.5)TiO3 + x(Bi0.5K0.5)TiO3 + 2.5(BaTiO3), where x = 0 to 24.5 mol %. The structural transitions were studied by XRD patterns and Raman spectra. The MPB was confirmed between x = 10 and 12.5 mol % BKT. The dielectric/ferroelectric/piezoelectric properties of the BNT-BKT-BT system are maximized in the MPB region exhibiting a dielectric constant of 1506, a remanent polarization of 34.4 μC/cm2, a coercive field = 36.9 kV/cm, and piezoelectric values of d33 = 109 pC/N, kt = 0.52, and kp = 0.24. Changes in microstructure as a function of BKT content are also presented and discussed. PMID:29494486

Multifunctionality of nanocrystalline lanthanum ferrite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rai, Atma, E-mail: atma@iitp.ac.in; Thakur, Awalendra K.; Centre for Energy and Environment, Indian Institute of Technology Patna 800013 India

2016-05-06

Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ∼42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ∼3.45 m{sup 2}/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanummore » ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO{sub 3}.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.« less

Multifunctionality of nanocrystalline lanthanum ferrite

NASA Astrophysics Data System (ADS)

Rai, Atma; Thakur, Awalendra K.

2016-05-01

Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ˜42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ˜3.45 m2/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanum ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO3.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.

Effect of structural phase transformation in FeGaO{sub 3} on its magnetic and ferroelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lone, A. G., E-mail: agl221986@gmail.com; Bhowmik, R. N.

2015-06-24

We investigate the structural phase transformation from orthorhombic to rhombohedral structure in FeGaO{sub 3} by adopting a combined effect of mechanical alloying/milling and solid state sintering techniques. The structural phase formation of the FeGaO{sub 3} compound has been characterized by X-ray diffraction pattern. Mechanical milling played a significant role on the stabilization of rhombohedral phase in FeGaO{sub 3}, where as high temperature sintering stabilized the system in orthorhombic phase. A considerable difference has been observed in magnetic and ferroelectric properties of the system in two phases. The system in rhombohedral (R-3c) phase exhibited better ferromagnetic and of ferroelectric properties atmore » room temperature in comparison to orthorhombic (Pc2{sub 1}n) phase. The rhombohedral phase appears to be good for developing metal doped hematite system for spintronics applications and in that process mechanical milling played an important role.« less

Advances in Scanning Reflectarray Antennas Based on Ferroelectric Thin Film Phase Shifters for Deep Space Communications

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

2007-01-01

Though there are a few examples of scanning phased array antennas that have flown successfully in space, the quest for low-cost, high-efficiency, large aperture microwave phased arrays continues. Fixed and mobile applications that may be part of a heterogeneous exploration communication architecture will benefit from the agile (rapid) beam steering and graceful degradation afforded by phased array antennas. The reflectarray promises greater efficiency and economy compared to directly-radiating varieties. Implementing a practical scanning version has proven elusive. The ferroelectric reflectarray, under development and described herein, involves phase shifters based on coupled microstrip patterned on Ba(x)Sr(1-x)TiO3 films, that were laser ablated onto LaAlO3 substrates. These devices outperform their semiconductor counterparts from X- through and K-band frequencies. There are special issues associated with the implementation of a scanning reflectarray antenna, especially one realized with thin film ferroelectric phase shifters. This paper will discuss these issues which include: relevance of phase shifter loss; modulo 2(pi) effects and phase shifter transient effects on bit error rate; scattering from the ground plane; presentation of a novel hybrid ferroelectric-semiconductor phase shifter; and the effect of mild radiation exposure on phase shifter performance.

Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangeri, John; Espinal, Yomery; Jokisaari, Andrea M.

Here, composite materials comprised of ferroelectric nanoparticles in a dielectric matrix are being actively investigated for a variety of functional properties attractive for a wide range of novel electronic and energy harvesting devices. However, the dependence of these functionalities on shapes, sizes, orientation and mutual arrangement of ferroelectric particles is currently not fully understood. In this study, we utilize a time-dependent Ginzburg-Landau approach combined with coupled-physics finite-element-method based simulations to elucidate the behavior of polarization in isolated spherical PbTiO 3 or BaTiO 3 nanoparticles embedded in a dielectric medium, including air. The equilibrium polarization topology is strongly affected by particlemore » diameter, as well as the choice of inclusion and matrix materials, with monodomain, vortex-like and multidomain patterns emerging for various combinations of size and materials parameters. This leads to radically different polarization vs electric field responses, resulting in highly tunable size-dependent dielectric properties that should be possible to observe experimentally. Our calculations show that there is a critical particle size below which ferroelectricity vanishes. For the PbTiO 3 particle, this size is 2 and 3.4 nm, respectively, for high- and low-permittivity media. For the BaTiO 3 particle, it is ~3.6 nm regardless of the medium dielectric strength.« less