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Sample records for ferroelectric recording technology

  1. Ferroelectric Based Technologies for Accelerators

    SciTech Connect

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Kazakov, S.; Tagantsev, A.; Yakovlev, V.

    2009-01-22

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used--its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  2. Uncooled monolithic ferroelectric IRFPA technology

    NASA Astrophysics Data System (ADS)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  3. Advances in monolithic ferroelectric uncooled IRFPA technology

    NASA Astrophysics Data System (ADS)

    Hanson, Charles M.; Beratan, Howard R.; Belcher, James F.; Udayakumar, K. R.; Soch, Kevin L.

    1998-07-01

    The success of uncooled IR imaging at Raytheon has awakened a new view of the potential of thermal imaging. Once relegated to only expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, thermal imaging is now affordable for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are as low as $8000, and swelling production volume will soon drive prices substantially lower. The impetus for further development is performance. The hybrid barium strontium titanate (BST) detectors currently in production have limited potential for improved sensitivity, and their MTF is suppressed at high frequencies. Microbolometer arrays in development at Raytheon have demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers, and arguably more. They are also compatible with numerous fielded and planned system implementations. Like a microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Initial imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  4. High-density ferroelectric recording using a hard disk drive-type data storage system

    NASA Astrophysics Data System (ADS)

    Aoki, Tomonori; Hiranaga, Yoshiomi; Cho, Yasuo

    2016-05-01

    Ferroelectric probe data storage has been proposed as a novel data storage method in which bits are recorded based on the polarization directions of individual domains. These bits are subsequently read by scanning nonlinear dielectric microscopy. The domain walls of typical ferroelectric materials are quite thin: often only several times the lattice constant, which is advantageous for high-density data storage. In this work, high-density read/write (R/W) demonstrations were conducted using a hard disk drive-type test system, and the writing of bit arrays with a recording density of 3.4 Tbit/in.2 was achieved. Additionally, a series of writing and reading operations was successfully demonstrated at a density of 1 Tbit/in.2. Favorable characteristics of ferroelectric recording media for use with the proposed method are discussed in the latter part of this paper.

  5. Optical and electrical Barkhausen noise induced by recording ferroelectric domain holograms

    NASA Astrophysics Data System (ADS)

    Kewitsch, Anthony S.; Saito, Akira; Yariv, Amnon; Segev, Mordechai; Neurgaonkar, Ratnakar R.

    1995-08-01

    Ferroelectric domain gratings with periods of the order of an optical wavelength are induced in strontium barium niobate by photorefractive space-charge fields. We measure the Barkhausen noise in current and diffraction efficiency while optically recording domain gratings and show that the two are strongly correlated in time. Significant random depolarization occurs under high-intensity illumination. We deduce the kinetics of the domain inversion process from the shape of the current transients.

  6. Photoinduced electrokinetic redistribution of nano/microparticles during holographic grating recording in the ferroelectric crystal

    NASA Astrophysics Data System (ADS)

    Kukhtarev, N.; Kukhtareva, T.; Wang, J.

    2011-10-01

    We have investigated photoinduced redistribution of metal nanoparticles, placed on the surface of the ferroelectric photorefractive crystal during recording of dynamic holograms. Motivations for this study were improvement of sensitivity for recording of dynamic holographic gratings, for application in nondestructive testing of materials. The home- made biosynthesized gold and silver colloidal solutions were spread as a thin layer on the ferroelectric photorefractive crystal surface. Holographic gratings were recorded in photorefractive crystal of Fe:LiNbO3(Fe:LN) by the HeNe laser (λ=633nm) to avoid direct influence of laser light on nanoparticles. Photorefractive holographic grating initially recorded in the crystal volume produce spatially modulated electric field on the crystal surface. This field led to electrophoretic redistribution of the nanoparicles on the crystal surface that result also in additional contribution to the electric field pattern and also change diffraction efficiency of hologram. In addition, we have recorded holographic grating in Fe:LN placed in 5mm cuvette with silver nanoparticles nanofluid and observed nanoparticles distribution along grating line. We have calculated electrophoretic (EP) and dielectrophoretic (DEP) forces on the crystal surface with holographic photorefractive grating, recorded in the crystal. It is shown that longitudinal (along the crystal surface) components of the DEP-force can be described only with high-contrast approach.

  7. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    NASA Astrophysics Data System (ADS)

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-06-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  8. Recording Technologies: Sights & Sounds. Resources in Technology.

    ERIC Educational Resources Information Center

    Deal, Walter F., III

    1994-01-01

    Provides information on recording technologies such as laser disks, audio and videotape, and video cameras. Presents a design brief that includes objectives, student outcomes, and a student quiz. (JOW)

  9. Recording vocalizations with Bluetooth technology.

    PubMed

    Gaona-González, Andrés; Santillán-Doherty, Ana María; Arenas-Rosas, Rita Virginia; Muñoz-Delgado, Jairo; Aguillón-Pantaleón, Miguel Angel; Ordoñez-Gómez, José Domingo; Márquez-Arias, Alejandra

    2011-06-01

    We propose a method for capturing vocalizations that is designed to avoid some of the limiting factors found in traditional bioacoustical methods, such as the impossibility of obtaining continuous long-term registers or analyzing amplitude due to the continuous change of distance between the subject and the position of the recording system. Using Bluetooth technology, vocalizations are captured and transmitted wirelessly into a receiving system without affecting the quality of the signal. The recordings of the proposed system were compared to those obtained as a reference, which were based on the coding of the signal with the so-called pulse-code modulation technique in WAV audio format without any compressing process. The evaluation showed p < .05 for the measured quantitative and qualitative parameters. We also describe how the transmitting system is encapsulated and fixed on the animal and a way to video record a spider monkey's behavior simultaneously with the audio recordings.

  10. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

    PubMed Central

    2011-01-01

    In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. PMID:21794156

  11. Photonic quantum technologies (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    O'Brien, Jeremy L.

    2015-09-01

    The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

  12. Ultra-high density recording technologies

    NASA Technical Reports Server (NTRS)

    Kryder, Mark H.

    1993-01-01

    The Engineering Research Center in Data Storage Systems at Carnegie Mellon University in cooperation with the National Storage Industry Consortium has selected goals of achieving 10 Gbit/sq in. recording density in magnetic and magneto-optic disk recording and 1 terabyte/cubic in. magnetic tape recording technologies. This talk describes the approaches being taken and the status of research leading to these goals.

  13. Neural recording and modulation technologies

    NASA Astrophysics Data System (ADS)

    Chen, Ritchie; Canales, Andres; Anikeeva, Polina

    2017-01-01

    In the mammalian nervous system, billions of neurons connected by quadrillions of synapses exchange electrical, chemical and mechanical signals. Disruptions to this network manifest as neurological or psychiatric conditions. Despite decades of neuroscience research, our ability to treat or even to understand these conditions is limited by the capability of tools to probe the signalling complexity of the nervous system. Although orders of magnitude smaller and computationally faster than neurons, conventional substrate-bound electronics do not recapitulate the chemical and mechanical properties of neural tissue. This mismatch results in a foreign-body response and the encapsulation of devices by glial scars, suggesting that the design of an interface between the nervous system and a synthetic sensor requires additional materials innovation. Advances in genetic tools for manipulating neural activity have fuelled the demand for devices that are capable of simultaneously recording and controlling individual neurons at unprecedented scales. Recently, flexible organic electronics and bio- and nanomaterials have been developed for multifunctional and minimally invasive probes for long-term interaction with the nervous system. In this Review, we discuss the design lessons from the quarter-century-old field of neural engineering, highlight recent materials-driven progress in neural probes and look at emergent directions inspired by the principles of neural transduction.

  14. DataPlay's mobile recording technology

    NASA Astrophysics Data System (ADS)

    Bell, Bernard W., Jr.

    2002-01-01

    A small rotating memory device which utilizes optical prerecorded and writeable technology to provide a mobile recording technology solution for digital cameras, cell phones, music players, PDA's, and hybrid multipurpose devices have been developed. This solution encompasses writeable, read only, and encrypted storage media.

  15. Ferroelectric Pump

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    2000-01-01

    A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

  16. Memory Technologies and Data Recorder Design

    NASA Technical Reports Server (NTRS)

    Strauss, Karl F

    2009-01-01

    Missions, both near Earth and deep space, are under consideration that will require data recorder capacities of such magnitude as to be unthinkable just a few years ago. Concepts requiring well over 16,000 GB of storage are being studied. To achieve this capacity via "normal means" was considered incredible as recently as 2004. This paper is presented in two parts. Part I describes the analysis of data recorder capacities for missions as far back as 35 years and provides a projection of data capacities required 20 years from now based upon missions either nearing launch, or in the planning stage. The paper presents a similar projection of memory device capacities as baselined in the ITRS - the International Technology Roadmap for Semiconductors. Using known Total Ionizing Dose tolerance going back as far as a decade, a projection of total dose tolerance is made for two prime technologies out to the year 2028.

  17. Supramolecular ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tayi, Alok S.; Kaeser, Adrien; Matsumoto, Michio; Aida, Takuzo; Stupp, Samuel I.

    2015-04-01

    Supramolecular chemistry uses non-covalent interactions to coax molecules into forming ordered assemblies. The construction of ordered materials with these reversible bonds has led to dramatic innovations in organic electronics, polymer science and biomaterials. Here, we review how supramolecular strategies can advance the burgeoning field of organic ferroelectricity. Ferroelectrics -- materials with a spontaneous and electrically reversible polarization -- are touted for use in non-volatile computer memories, sensors and optics. Historically, this physical phenomenon has been studied in inorganic materials, although some organic examples are known and strong interest exists to extend the search for ferroelectric molecular systems. Other undiscovered applications outside this regime could also emerge. We describe the key features necessary for molecular and supramolecular dipoles in organic ferroelectrics and their incorporation into ordered systems, such as porous frameworks and liquid crystals. The goal of this Review is to motivate the development of innovative supramolecular ferroelectrics that exceed the performance and usefulness of known systems.

  18. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  19. Technology Acceptance of Electronic Medical Records by Nurses

    ERIC Educational Resources Information Center

    Stocker, Gary

    2010-01-01

    The purpose of this study was to evaluate the Technology Acceptance Model's (TAM) relevance of the intention of nurses to use electronic medical records in acute health care settings. The basic technology acceptance research of Davis (1989) was applied to the specific technology tool of electronic medical records (EMR) in a specific setting…

  20. Technology Acceptance of Electronic Medical Records by Nurses

    ERIC Educational Resources Information Center

    Stocker, Gary

    2010-01-01

    The purpose of this study was to evaluate the Technology Acceptance Model's (TAM) relevance of the intention of nurses to use electronic medical records in acute health care settings. The basic technology acceptance research of Davis (1989) was applied to the specific technology tool of electronic medical records (EMR) in a specific setting…

  1. Student Record Automating Using Desktop Computer Technologies.

    ERIC Educational Resources Information Center

    Almerico, Gina M.; Baker, Russell K.; Matassini, Norma

    Teacher education programs nationwide are required by state and federal governments to maintain comprehensive student records of all current and graduated students in their programs. A private, mid-sized university established a faculty team to analyze record-keeping procedures to comply with these government requirements. The team's mandate was…

  2. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 3 2014-10-01 2014-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  3. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 3 2012-10-01 2012-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  4. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 3 2013-10-01 2013-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  5. Laser thermographic technologies for hard copy recording

    NASA Astrophysics Data System (ADS)

    Bessmel'tsev, Viktor P.; Baev, Sergej G.

    1995-04-01

    Methods of hard copies recording based on thermal interaction of the beam from CO2 or YAG lasers with various kinds of films on any substrates have been developed. The recording processes are single-step and require no additional development. Among them are: (1) Laser thermodestruction of thin mask layers or of a material surface on any kinds of substrates. (2) Laser thermochemical reactions of thermal decomposition of metal salts in solid state phase on a surface of various hygroscopic substrates. The laser recording devices using the methods, described above have been developed and are manufactured now; they allow one to record hard copies with a size of up to 27 X 31 inches, a resolution of 4000 dpi.

  6. The United States Department of Energy Office of Industrial Technology`s Technology Benefits Recording System

    SciTech Connect

    Hughes, K.R.; Moore, N.L.

    1994-09-01

    The U.S. Department of Energy (DOE) Office of Industrial Technology`s (OIT`s) Technology Benefits Recording System (TBRS) was developed by Pacific Northwest Laboratory (PNL). The TBRS is used to organize and maintain records of the benefits accrued from the use of technologies developed with the assistance of OIT. OIT has had a sustained emphasis on technology deployment. While individual program managers have specific technology deployment goals for each of their ongoing programs, the Office has also established a separate Technology Deployment Division whose mission is to assist program managers and research and development partners commercialize technologies. As part of this effort, the Technology Deployment Division developed an energy-tracking task which has been performed by PNL since 1977. The goal of the energy-tracking task is to accurately assess the energy savings impact of OIT-developed technologies. In previous years, information on OIT-sponsored technologies existed in a variety of forms--first as a hardcopy, then electronically in several spreadsheet formats that existed in multiple software programs. The TBRS was created in 1993 for OIT and was based on information collected in all previous years from numerous industrial contacts, vendors, and plants that have installed OIT-sponsored technologies. The TBRS contains information on technologies commercialized between 1977 and the present, as well as information on emerging technologies in the late development/early commercialization stage of the technology life cycle. For each technology, details on the number of units sold and the energy saved are available on a year-by-year basis. Information regarding environmental benefits, productivity and competitiveness benefits, or impact that the technology may have had on employment is also available.

  7. Integrating Records Management (RM) and Information Technology (IT)

    SciTech Connect

    NUSBAUM,ANNA W.; CUSIMANO,LINDA J.

    2000-03-02

    Records Managers are continually exploring ways to integrate their services with those offered by Information Technology-related professions to capitalize on the advantages of providing customers a total solution to managing their records and information. In this day and age, where technology abounds, there often exists a fear on the part of records management that this integration will result in a loss of identity and the focus of one's own mission - a fear that records management may become subordinated to the fast-paced technology fields. They need to remember there is strength in numbers and it benefits RM, IT, and the customer when they can bring together the unique offerings each possess to reach synergy for the benefit of all the corporations. Records Managers, need to continually strive to move ''outside the records management box'', network, expand their knowledge, and influence the IT disciplines to incorporate the concept of ''management'' into their customer solutions.

  8. Strong anisotropy of ferroelectricity in lead-free bismuth silicate

    NASA Astrophysics Data System (ADS)

    Seol, Daehee; Taniguchi, Hiroki; Hwang, Jae-Yeol; Itoh, Mitsuru; Shin, Hyunjung; Kim, Sung Wng; Kim, Yunseok

    2015-07-01

    Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies.Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03161c

  9. Electronic Record Systems and Individual Privacy. Federal Government Information Technology.

    ERIC Educational Resources Information Center

    Congress of the U.S., Washington, DC. Office of Technology Assessment.

    This report considers the privacy issues raised by the growth of the new technology being applied to the personal information collected, maintained, and disseminated by the Federal Government. Four major areas are addressed: (1) technological developments relevant to government record systems; (2) current and prospective Federal agency use of…

  10. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  11. Review of past, present, and future of recording technology

    NASA Astrophysics Data System (ADS)

    Al-Jibouri, Abdul-Rahman

    2003-03-01

    The revolution of information storage and recording has been advanced significantly over the past two decades. Since the development of computers in early 1950s by IBM, the data (information) was stored on magnetic disc by inducing magnetic flux to define the pit direction. The first disc was developed by IBM with diameter of 25inch to store around 10 kByte. After four decades, the disc drive has become more advanced by reducing the drive size, increasing ariel density and cost reduction. The introduction of new computer operating systems and the Internet resulted in the need to develop high ariel density in the 1990s. Therefore, the disc drive manufacturers were pushed harder to develop new technologies at low cost to survive the competitive market. The disc drives, which are based on media (where the data/information is stored) and the head (which will write and read data/information). The head and disc are separated and with the current technology the spacing between the disc and head is about 40nm. A new technology based on magnetic recording was developed to serve the audio market. This technology is called magnetic type, it is similar to the disc drive, but the media is based on tape rather than rigid disc. Another difference being the head and media are in direct contact. Magnetic tape was developed for audio application and a few years later this technology was extended to allow and accept another technology, called video. This allows consumers to record and view movies in their home. The magnetic tape also used the computer industries for back up data. Magnetic tape is still used in computers and has advanced further over the past decade, companies like Quantum Corp has developed digital linear tape.

  12. Progress Toward Demonstrating a High Performance Optical Tape Recording Technology

    NASA Technical Reports Server (NTRS)

    Oakley, W. S.

    1996-01-01

    This paper discusses the technology developments achieved during the first year of a program to develop a high performance digital optical tape recording device using a solid state, diode pumped, frequency doubled green laser source. The goal is to demonstrate, within two years, useful read/write data transfer rates to at least 100 megabytes per second and a user capacity of up to one terabyte per cartridge implemented in a system using a '3480' style mono-reel tape cartridge.

  13. Ferroelectric symmetry-protected multibit memory cell

    NASA Astrophysics Data System (ADS)

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-02-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

  14. Ferroelectric symmetry-protected multibit memory cell

    DOE PAGES

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-02-08

    Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valuedmore » non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.« less

  15. Ferroelectric symmetry-protected multibit memory cell

    PubMed Central

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-01-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing. PMID:28176866

  16. Surface 12 lead electrocardiogram recordings using smart phone technology.

    PubMed

    Baquero, Giselle A; Banchs, Javier E; Ahmed, Shameer; Naccarelli, Gerald V; Luck, Jerry C

    2015-01-01

    AliveCor ECG is an FDA approved ambulatory cardiac rhythm monitor that records a single channel (lead I) ECG rhythm strip using an iPhone. In the past few years, the use of smartphones and tablets with health related applications has significantly proliferated. In this initial feasibility trial, we attempted to reproduce the 12 lead ECG using the bipolar arrangement of the AliveCor monitor coupled to smart phone technology. We used the AliveCor heart monitor coupled with an iPhone cellular phone and the AliveECG application (APP) in 5 individuals. In our 5 individuals, recordings from both a standard 12 lead ECG and the AliveCor generated 12 lead ECG had the same interpretation. This study demonstrates the feasibility of creating a 12 lead ECG with a smart phone. The validity of the recordings would seem to suggest that this technology could become an important useful tool for clinical use. This new hand held smart phone 12 lead ECG recorder needs further development and validation. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. 47 CFR 73.9008 - Interim approval of authorized digital output protection technologies and authorized recording...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... technologies and authorized recording methods. (a) Certifications for digital output protection technologies and authorized recording methods. The proponent of a specific digital output protection technology or... that such digital output protection technology or recording method is appropriate for use in covered...

  18. Standardized UXO Technology Demonstration Site Scoring Record Number 930b

    DTIC Science & Technology

    2010-11-01

    01-07-2010 4. TITLE AND SUBTITLE Standardized USO Technology Demonstration Site Scoring Record No. 930b 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c...orthogonal transmitters and ten pairs of differenced receivers. Each vertical face of the cube has three induction coils, and two horizontal faces have...critically damped 5-inch coils with a self-resonant frequency of 75 kHz. The data acquisition board has 12 high-speed ADC channels for output. Ten of

  19. Ferroelectric liquid crystal display

    NASA Technical Reports Server (NTRS)

    York, Paul K. (Inventor)

    1977-01-01

    A ferroelectric liquid crystal display device employs capacitance spoiling layers to minimize unneeded capacitances created by crossovers of X and Y address lines and to accurately define desired capacitances. The spoiler layers comprise low dielectric constant layers which space electrodes from the ferroelectric at crossover points where capacitance is not needed for device operation.

  20. Wireless ferroelectric resonating sensor.

    PubMed

    Viikari, Ville; Seppa, Heikki; Mattila, Tomi; Alastalo, Ari

    2010-04-01

    This paper presents a passive wireless resonating sensor that is based on a ferroelectric varactor. The sensor replies with its data at an intermodulation frequency when a reader device illuminates it at 2 closely located frequencies. The paper derives a theoretical equation for the response of such a sensor, verifies the theory by simulations, and demonstrates a temperature sensor based on a ferroelectric varactor.

  1. Ferroelectric Graphene-Perovskite Interfaces.

    PubMed

    Volonakis, George; Giustino, Feliciano

    2015-07-02

    Owing to their record-breaking energy conversion efficiencies, hybrid organometallic perovskites have emerged as the most promising light absorbers and ambipolar carrier transporters for solution-processable solar cells. Simultaneously, due to its exceptional electron mobility, graphene represents a prominent candidate for replacing transparent conducting oxides. Thus, it is possible that combining these wonder materials may propel the efficiency toward the Schokley-Queisser limit. Here, using first-principles calculations on graphene-CH3NH3PbI3 interfaces, we find that graphene suppresses the octahedral tilt in the very first perovskite monolayer, leading to a nanoscale ferroelectric distortion with a permanent polarization of 3 mC/m(2). This interfacial ferroelectricity drives electron extraction from the perovskite and hinders electron-hole recombination by keeping the electrons and holes separated. The interfacial ferroelectricity identified here simply results from the interplay between graphene's planar structure and CH3NH3PbI3's octahedral connectivity; therefore, this mechanism may be effective in a much broader class of perovskites, with potential applications in photovoltaics and photocatalysis.

  2. Flexible ferroelectric organic crystals

    PubMed Central

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-01-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity—the properties that originate from their non-centrosymmetric crystal lattice—but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals. PMID:27734829

  3. Flexible ferroelectric organic crystals

    SciTech Connect

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-13

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. But, until now, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. We report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity-the properties that originate from their non-centrosymmetric crystal lattice-but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  4. Flexible ferroelectric organic crystals

    DOE PAGES

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; ...

    2016-10-13

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. But, until now, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. We report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity-the properties that originate from their non-centrosymmetric crystal lattice-but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules.more » This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.« less

  5. Flexible ferroelectric organic crystals

    NASA Astrophysics Data System (ADS)

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity--the properties that originate from their non-centrosymmetric crystal lattice--but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  6. Ferroelectric switching of elastin

    PubMed Central

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  7. Ultrafast Polarization Switching in a Biaxial Molecular Ferroelectric Thin Film: [Hdabco]ClO4.

    PubMed

    Tang, Yuan-Yuan; Zhang, Wan-Ying; Li, Peng-Fei; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-12-07

    Molecular ferroelectrics are attracting much attention as valuable complements to conventional ceramic ferroelectrics owing to their solution processability and nontoxicity. Encouragingly, the recent discovery of a multiaxial molecular ferroelectric, tetraethylammonium perchlorate, is expected to be able to solve the problem that in the technologically relevant thin-film form uniaxial molecular ferroelectrics have been found to perform considerably more poorly than in bulk. However, it can show good polarization-electric field (P-E) hysteresis loops only at very low frequency, severely hampering practical applications such as ferroelectric random access memory. Here, we present a biaxial molecular ferroelectric thin film of [Hdabco]ClO4 (dabco = 1,4-diazabicyclo[2.2.2]octane) (1), where a perfect ferroelectric hysteresis loop can be observed even at 10 kHz. It is the first example of a molecular ferroelectric thin film whose polarization can be switched at such a high frequency. Moreover, using piezoresponse force microscopy, we clearly observed the coexistence of 180° and non-180° ferroelectric domains and provided direct experimental proof that 180° ferroelectric switching and non-180° ferroelastic switching are both realized; that is, a flexible alteration of the polarization axis direction can occur in the thin film by applying an electric field. These results open a new avenue for applications of molecular ferroelectrics and will inspire further exploration of high-performance multiaxial molecular ferroelectric thin films.

  8. Magnetic Recording Media Technology for the Tb/In2 Era

    SciTech Connect

    Bertero, Gerardo

    2010-04-07

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  9. Magnetic Recording Media Technology for the Tb/in2 Era"

    ScienceCinema

    Bertero, Gerardo [Western Digital

    2016-07-12

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  10. Super Stable Ferroelectrics with High Curie Point

    PubMed Central

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  11. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-07

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  12. Ferroelectric Properties of CaBi4Ti4O15 Thin Films on Ito/glass Substrates Prepared by Sol-Gel Technology

    NASA Astrophysics Data System (ADS)

    Cheng, Chien-Min; Kuan, Ming-Chang; Chen, Kai-Hunag; Tsai, Jen-Hwan

    In this study, ferroelectric CaBi4Ti4O15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p-E curves, the 2Pr value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV-vis) spectrum were also investigated and discussed.

  13. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  14. Mixed electrochemical-ferroelectric states in nanoscale ferroelectrics

    NASA Astrophysics Data System (ADS)

    Yang, Sang Mo; Morozovska, Anna N.; Kumar, Rajeev; Eliseev, Eugene A.; Cao, Ye; Mazet, Lucie; Balke, Nina; Jesse, Stephen; Vasudevan, Rama K.; Dubourdieu, Catherine; Kalinin, Sergei V.

    2017-08-01

    Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. However, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. Here we show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical-ferroelectric state. We explore the nature, thermodynamics, and thickness evolution of such states, and demonstrate the experimental pathway to establish its presence. This analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.

  15. Losses in Ferroelectric Materials

    PubMed Central

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  16. Losses in Ferroelectric Materials.

    PubMed

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  17. Linear scanning array with bulk ferroelectric-integrated feed network.

    PubMed

    Teo, Peng-Thian; Jose, Kollakompil A; Wang, Ya-Jun; Lee, Ching-Kwang; Varadan, Vijay K

    2002-05-01

    Variable ferroelectric delay line technology has been utilized to implement a proof-of-concept, continuous scanning, ferroelectric integrated phased array antenna system. S21 phase shifts of up to 157 degrees have been achieved from the phase shifter itself via analogous variation of a DC bias. When integrated into a phased array, beam scanning of at least +/-12 degrees is achieved prior to any optimization. Some of the key material requirements, fabrication procedures, characterization, and assembly of the ferroelectric material will be revealed. The design, integration, and performance of the array system using such phased shifters will be presented.

  18. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  19. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  20. Highly Efficient Red-Light Emission in An Organic-Inorganic Hybrid Ferroelectric: (Pyrrolidinium)MnCl₃.

    PubMed

    Zhang, Yi; Liao, Wei-Qiang; Fu, Da-Wei; Ye, Heng-Yun; Chen, Zhong-Ning; Xiong, Ren-Gen

    2015-04-22

    Luminescence of ferroelectric materials is one important property for technological applications, such as low-energy electron excitation. However, the vast majority of doped inorganic ferroelectric materials have low luminescent efficiency. The past decade has envisaged much progress in the design of both ferroelectric and luminescent organic-inorganic hybrid complexes for optoelectronic applications. The combination of ferroelectricity and luminescence within organic-inorganic hybrids would lead to a new type of luminescent ferroelectric multifunctional materials. We herein report a hybrid molecular ferroelectric, (pyrrolidinium)MnCl3, which exhibits excellent ferroelectricity with a saturation polarization of 5.5 μC/cm(2) as well as intense red luminescence with high quantum yield of 56% under a UV excitation. This finding may extend the application of organic-inorganic hybrid compounds to the field of ferroelectric luminescence and/or multifunctional devices.

  1. Technologies for Text: Storage and Retrieval of Linguistic Records.

    ERIC Educational Resources Information Center

    Friedman, Edward A.

    This learning module, one in a series developed in a project on "Technology and the Liberal Arts," is an introduction to emerging technological developments for information storage. A historical sketch is provided of text technologies leading up to widespread use of the typewriter toward the end of the 19th century. This is followed by an analysis…

  2. Technologies for Text: Storage and Retrieval of Linguistic Records.

    ERIC Educational Resources Information Center

    Friedman, Edward A.

    This learning module, one in a series developed in a project on "Technology and the Liberal Arts," is an introduction to emerging technological developments for information storage. A historical sketch is provided of text technologies leading up to widespread use of the typewriter toward the end of the 19th century. This is followed by an analysis…

  3. Ferroelectric Phase Transformations for Energy Conversion and Storage Applications

    NASA Astrophysics Data System (ADS)

    Jo, Hwan Ryul

    Ferroelectric materials possess a spontaneous polarization and actively respond to external mechanical, electrical, and thermal loads. Due to their coupled behavior, ferroelectric materials are used in products such as sensors, actuators, detectors, and transducers. However, most current applications rely on low-energy conversion that involves low magnitude fields. They utilize the low-field linear properties of ferroelectric materials (piezoelectric, pyroelectric) and do not take full advantage of the large-field nonlinear behavior (irreversible domain wall motion, phase transformations) that can occur in ferroelectric materials. When external fields exceed a certain critical level, a structural transformation of the crystal can occur. These phase transformations are accompanied by a much larger response than the linear piezoelectric and pyroelectric responses, by as much as a multiple of ten times in the magnitude. This makes the non-linear behavior in ferroelectric materials promising for energy harvesting and energy storage technologies which will benefit from large-energy conversion. Yet, the ferroelectric phase transformation behavior under large external fields have been less studied and only a few studies have been directed at utilizing this large material response in applications. This dissertation addresses the development ferroelectric phase transformation-based applications, with particular focus on the materials. Development of the ferroelectric phase transformation-based applications was approached in several steps. First, the phase transformation behavior was fully characterized and understood by measuring the phase transformation responses under mechanical, electrical, thermal, and combined loads. Once the behavior was well characterized, systems level applications were addressed. This required assessing the effect of the phase transformation behavior on system performance. The performance of ferroelectric devices is strongly dependent on material

  4. Applications of modern ferroelectrics.

    PubMed

    Scott, J F

    2007-02-16

    Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.

  5. Ferroelectrics based absorbing layers

    NASA Astrophysics Data System (ADS)

    Hao, Jianping; Sadaune, Véronique; Burgnies, Ludovic; Lippens, Didier

    2014-07-01

    We show that ferroelectrics-based periodic structure made of BaSrTiO3 (BST) cubes, arrayed onto a metal plate with a thin dielectric spacer film exhibit a dramatic enhancement of absorbance with value close to unity. The enhancement is found around the Mie magnetic resonance of the Ferroelectrics cubes with the backside metal layer stopping any transmitted waves. It also involves quasi-perfect impedance matching resulting in reflection suppression via simultaneous magnetic and electrical activities. In addition, it was shown numerically the existence of a periodicity optimum, which is explained from surface waves analysis along with trade-off between the resonance damping and the intrinsic loss of ferroelectrics cubes. An experimental verification in a hollow waveguide configuration with a good comparison with full-wave numerical modelling is at last reported by measuring the scattering parameters of single and dual BST cubes schemes pointing out coupling effects for densely packed structures.

  6. Health information technology and electronic health records in neurologic practice.

    PubMed

    Esper, Gregory J; Drogan, Oksana; Henderson, William S; Becker, Amanda; Avitzur, Orly; Hier, Daniel B

    2010-05-01

    The tipping point for electronic health records (EHR) has been reached and universal adoption in the United States is now inevitable. Neurologists will want to choose their electronic health record prudently. Careful selection, contracting, planning, and training are essential to successful implementation. Neurologists need to examine their workflow carefully and make adjustments to ensure that efficiency is increased. Neurologists will want to achieve a significant return on investment and qualify for all applicable financial incentives from payers, including CMS. EHRs are not just record-keeping tools but play an important role in quality improvement, evidence-based medicine, pay for performance, patient education, bio-surveillance, data warehousing, and data exchange.

  7. Towards multicaloric effect with ferroelectrics

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Zhang, Guangzu; Li, Qi; Bellaiche, Laurent; Scott, James F.; Dkhil, Brahim; Wang, Qing

    2016-12-01

    Utilizing thermal changes in solid-state materials strategically offers caloric-based alternatives to replace current vapor-compression technology. To make full use of multiple forms of the entropy and achieve higher efficiency for designs of cooling devices, the multicaloric effect appears as a cutting-edge concept encouraging researchers to search for multicaloric materials with outstanding caloric properties. Here we report the multicaloric effect in BaTi O3 single crystals driven simultaneously by mechanical and electric fields and described via a thermodynamic phenomenological model. It is found that the multicaloric behavior is mainly dominated by the mechanical field rather than the electric field, since the paraelectric-to-ferroelectric transition is more sensitive to mechanical field than to electric field. The use of uniaxial stress competes favorably with pressure due to its much higher caloric strength and negligible elastic thermal change. It is revealed that multicaloric response can be significantly larger than just the sum of mechanocaloric and electrocaloric effects in temperature regions far above the Curie temperature but cannot exceed this limit near the Curie temperature. Our results also show the advantage of the multicaloric effect over the mechanically mediated electrocaloric effect or electrically mediated mechanocaloric effect. Our findings therefore highlight the importance of ferroelectric materials to develop multicaloric cooling.

  8. Shallow Water UXO Technology Demonstration Site Scoring Record No. 3

    DTIC Science & Technology

    2007-01-01

    TECHNOLOGY TYPE/PLATFORM: MAGNETOMETER PREPARED BY: U.S. ARMY ABERDEEN TEST CENTER ABERDEEN PROVING GROUND, MD 21005-5059 JANUARY 2007... magnetometers . Testing was conducted at ATC, Standardized Shallow Water UXO Technology Demonstration Site. A description of the tested system and an estimate... magnetometer , MEC Unclassified Unclassified Unclassified SAR (Page ii Blank) i ACKNOWLEDGMENTS Author

  9. Polarization fatigue of organic ferroelectric capacitors

    PubMed Central

    Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W. M.; de Leeuw, Dago M.

    2014-01-01

    The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 108 times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts. PMID:24861542

  10. Design of a Multi-Level/Analog Ferroelectric Memory Device

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2006-01-01

    Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  11. Design of a Multi-Level/Analog Ferroelectric Memory Device

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2006-01-01

    Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  12. Tungsten Based Electrodes for Stacked Capacitor Ferroelectric Memories

    NASA Astrophysics Data System (ADS)

    Trupina, L.; Baborowski, J.; Muralt, P.; Meyer, V.; Bouvet, D.; Fazan, P.; Lobet, M.

    2002-11-01

    Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 μm technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In this work, we investigated electrode systems to be applied between sputter deposited, ferroelectric PbZr0.35Ti0.65O3 (PZT) and tungsten. Besides the obvious barrier function of such an electrode system, the texture of the PZT is of interest as well. The roughness of chemical vapor deposition (CVD) of W layer before and after etch-back by dry etching resulted in an increased leakage current of the ferroelectric capacitor. The problem could be solved by chemical mechanical polishing (CMP) of the tungsten film.

  13. Domains in Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Gregg, Marty

    2010-03-01

    Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device

  14. Isotopic, Ecological and Technological Investigations of the Land Snail Record

    ERIC Educational Resources Information Center

    Faber, Meredith L.

    2012-01-01

    In the ever-evolving landscape of the natural world, change is the only constant. Investigating how life accommodates that change can provide valuable insights into the biological, ecological and geological history of our planet. The fossil record is replete with examples of organisms which failed to survive in the wake of ongoing environmental…

  15. Isotopic, Ecological and Technological Investigations of the Land Snail Record

    ERIC Educational Resources Information Center

    Faber, Meredith L.

    2012-01-01

    In the ever-evolving landscape of the natural world, change is the only constant. Investigating how life accommodates that change can provide valuable insights into the biological, ecological and geological history of our planet. The fossil record is replete with examples of organisms which failed to survive in the wake of ongoing environmental…

  16. Digital Recording Technology in the Writing Classroom: Sampling as Citing

    ERIC Educational Resources Information Center

    Duffy, W. Keith

    2004-01-01

    For the last few years, the author has been implementing a pedagogy that infuses musical composition--specifically the recording of electronic music--into his first-year composition courses. The author and his students have been quite surprised by the theoretical and practical connections that exist between the production of popular electronic…

  17. Promoting Independence through Assistive Technology: Evaluating Audio Recorders to Support Grocery Shopping

    ERIC Educational Resources Information Center

    Bouck, Emily C.; Satsangi, Rajiv; Bartlett, Whitney; Weng, Pei-Lin

    2012-01-01

    In light of a positive research base regarding technology-based self-operating prompting systems (e.g., iPods), yet a concern about the sustainability of such technologies after a research project is completed, this study sought to explore the effectiveness and efficiency of an audio recorder, a low-cost, more commonly accessible technology to…

  18. Promoting Independence through Assistive Technology: Evaluating Audio Recorders to Support Grocery Shopping

    ERIC Educational Resources Information Center

    Bouck, Emily C.; Satsangi, Rajiv; Bartlett, Whitney; Weng, Pei-Lin

    2012-01-01

    In light of a positive research base regarding technology-based self-operating prompting systems (e.g., iPods), yet a concern about the sustainability of such technologies after a research project is completed, this study sought to explore the effectiveness and efficiency of an audio recorder, a low-cost, more commonly accessible technology to…

  19. Measuring the evolution of the drivers of technological innovation in the patent record.

    PubMed

    Buchanan, Andrew; Packard, Norman H; Bedau, Mark A

    2011-01-01

    We argue that technology changes over time by an evolutionary process that is similar in important respects to biological evolution. The process is adaptive in the sense that technologies are selected because of their specific adaptive value and not at random, but this adaptive evolutionary process differs from the Darwinian process of random variation followed by natural selection. We find evidence for the adaptive evolution of technology in the US patent record, specifically, the public bibliographic information of all utility patents issued in the United States from 1976 through 2010. Patents record certain innovations in the evolution of technology. The 1976-2010 patent record is huge, containing almost four million patents. We use a patent's incoming citations to measure its impact on subsequent patented innovations. Weighting innovative impact by the dissimilarity between parent and child technologies reveals that many of the most fecund inventions are door-opening technologies that spawn innovations in widely diverse categories.

  20. Molecular ferroelectrics: where electronics meet biology

    PubMed Central

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-01-01

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by overview on the fundamentals of ferroelectricity. Latest development in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also noted. PMID:24018952

  1. Molecular ferroelectrics: where electronics meet biology.

    PubMed

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  2. Shallow Water UXO Technology Demonstration Site Scoring Record No. 7

    DTIC Science & Technology

    2007-05-01

    to eat lunch and charge the battery – using the truck instead of the trickle charger . Downtime equipment 85 1425 1450 Surveying. Collecting data...sensor array designed by 3DGeophysics. Testing was conducted at ATC, Standardized Shallow Water UXO Technology Demonstration Site. A description of...available on the capabilities of shallow water detection systems when these criteria were developed. However, they were used in the design of the test

  3. Ferroelectric Thin Film Development

    DTIC Science & Technology

    2003-12-10

    of stress. These 10 polar classes are pyroelectric: changes in temperature cause changes in polarization due to thermal expansion . Finally, if a...band diagram for and ITO/PZT/IGO capacitor. (a) When IGO is negatively biased, electron are injection occurs from the IGO electrode into the PZT and...heights to PbTiO3 . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 Polarization properties for an ITO/PZT/Au ferroelectric capacitor.. . 59

  4. Layered bismuth vanadate ferroelectrics

    SciTech Connect

    Osipyan, V.G.; Savchenko, L.M.; Elbakyan, V.L.; Avakyan, P.B.

    1987-08-01

    The authors synthesize new layered bismuth vanadate ferroelectrics. The x-ray diffraction characteristics of Bi/sub 2/VO/sub 5.5/ are shown. Thermal expansion of ceramics with various compositions are presented, as are the temperature dependences of the dielectric constant of the ceramic with various compositions. Unit-cell parameters, Curie temperature, electrical conductivity and the dielectric characteristics of the compositions studied are shown.

  5. Super-crystals in composite ferroelectrics

    PubMed Central

    Pierangeli, D.; Ferraro, M.; Di Mei, F.; Di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; DelRe, E.

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies. PMID:26907725

  6. Ferroelectric electron beam sources

    NASA Astrophysics Data System (ADS)

    Flechtner, D.; Flechtner, D.; Ivers, J. D.; Kerslick, G. S.; Nation, J. A.; Schächter, L.; Zhang, Ge

    1995-06-01

    Ferroelectric materials offer the possibility of compact electron sources, with modest requirements to initiate the emission process. We are studying such sources as possible injectors for microwave generation. The source consists of a polarized ferroelectric ceramic disk with silver electrodes coated on both faces. The front electrode consists of a periodic grid created by etching the silver to expose a line pattern of ceramic. This electrode functions as the cathode in a planar diode geometry with an accelerating gap adjustable from 0.1 to 5 cm. A rapid change in the polarization state of the ceramic is achieved by applying a 1-2 kV, 150 ns pulse between the electrodes of the ferroelectric. Early work used a coaxial cable to maintain an anode potential of up to 1 kV across the A-K gap. The emitted electron current was measured as a function of the gap spacing and the anode potential. The current varies linearly with the anode voltage, up to 1 kV, for gaps <10 mm, and typically exceeds the Child-Langmuir current density by at least two orders of magnitude. Current densities in excess of 70 A/cm2 have been measured. More recent work has used a 300 ns pulse forming network to apply a potential of up to 15 kV at the anode. Results of emittance and scaling measurements under these conditions are reported.

  7. Aviation Maintenance Technology. General. G103 Fundamentals of Regulations, Publications, and Records. Instructor Material.

    ERIC Educational Resources Information Center

    Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

    These instructor materials for an aviation maintenance technology course contain three instructional modules. The modules cover the following topics: selecting and using regulations, publications, and records; documenting aircraft records; and exercising mechanic's privileges and limitations. Each module contains some or all of these nine basic…

  8. Students' Satisfaction and Valuation of Web-Based Lecture Recording Technologies

    ERIC Educational Resources Information Center

    Taplin, Ross H.; Low, Lee Hun; Brown, Alistair M.

    2011-01-01

    This paper explores students' satisfaction and valuation of web-based lecture recording technologies (WBLT) that enable students to download recordings of lectures they could not attend or wish to review for revision purposes. The study was undertaken among undergraduates and postgraduates in accounting at an Australian university. In addition to…

  9. Using Micrographics Technology to Preserve and Make Accessible Records of Permanent Value.

    ERIC Educational Resources Information Center

    Mayfield, David M.

    1985-01-01

    Describes experiences of Genealogical Library of Church of Jesus Christ of Latter-day Saints in using micrographics technology to preserve records of permanent value from throughout the world. Highlights include selecting and filming records processing and sorting film, cataloging and using microforms, and what the future holds. Three sources are…

  10. Aviation Maintenance Technology. General. G103 Fundamentals of Regulations, Publications, and Records. Instructor Material.

    ERIC Educational Resources Information Center

    Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

    These instructor materials for an aviation maintenance technology course contain three instructional modules. The modules cover the following topics: selecting and using regulations, publications, and records; documenting aircraft records; and exercising mechanic's privileges and limitations. Each module contains some or all of these nine basic…

  11. Students' Satisfaction and Valuation of Web-Based Lecture Recording Technologies

    ERIC Educational Resources Information Center

    Taplin, Ross H.; Low, Lee Hun; Brown, Alistair M.

    2011-01-01

    This paper explores students' satisfaction and valuation of web-based lecture recording technologies (WBLT) that enable students to download recordings of lectures they could not attend or wish to review for revision purposes. The study was undertaken among undergraduates and postgraduates in accounting at an Australian university. In addition to…

  12. Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

    NASA Astrophysics Data System (ADS)

    Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

    2016-12-01

    With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

  13. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    NASA Astrophysics Data System (ADS)

    Aggarwal, Leena; Sekhon, Jagmeet S.; Guin, Satya N.; Arora, Ashima; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka; Sheet, Goutam

    2014-09-01

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe2 has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe2 crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm-3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe2 and gives rise to the observed ferroelectricity. Stereochemically active 5S2 lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe2.

  14. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    SciTech Connect

    Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam; Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka

    2014-09-15

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

  15. 75 FR 1446 - Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... ADMINISTRATION Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary..., underscores our need to process cases more efficiently by using advanced technologies. Applicants for... benefits. We rely on medical providers such as doctors, hospitals, clinics, and others in the healthcare...

  16. Healthtrak(tm): Technology Enhanced Human Interface to the Computerized Patient Record

    DTIC Science & Technology

    2002-07-01

    Jan 2003 THIS PAGE IS UNCLASSIFIED AD Award Number: DAMD17-02-C-0032 TITLE: HealthTrakM : Technology Enhanced Human Interface to the Computerized...Patient Record PRINCIPAL INVESTIGATOR: Azad M. Madni, Ph.D. Doctor Weiwen Lin Carla C. Madni CONTRACTING ORGANIZATION: Intelligent Systems Technology ...Intelligent Systems Technology , Incorporated For a period of five (5) years after completion of the project from which the data was generated, the

  17. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

    2013-10-01

    Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

  18. Pathways towards ferroelectricity in hafnia

    NASA Astrophysics Data System (ADS)

    Huan, Tran Doan; Sharma, Vinit; Rossetti, George A.; Ramprasad, Rampi

    2014-08-01

    The question of whether one can systematically identify (previously unknown) ferroelectric phases of a given material is addressed, taking hafnia (HfO2) as an example. Low free energy phases at various pressures and temperatures are identified using a first-principles based structure search algorithm. Ferroelectric phases are then recognized by exploiting group theoretical principles for the symmetry-allowed displacive transitions between nonpolar and polar phases. Two orthorhombic polar phases occurring in space groups Pca21 and Pmn21 are singled out as the most viable ferroelectric phases of hafnia, as they display low free energies (relative to known nonpolar phases), and substantial switchable spontaneous electric polarization. These results provide an explanation for the recently observed surprising ferroelectric behavior of hafnia, and reveal pathways for stabilizing ferroelectric phases of hafnia as well as other compounds.

  19. Conduction at a ferroelectric interface

    DOE PAGES

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; ...

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

  20. Conduction at a ferroelectric interface

    SciTech Connect

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

  1. Photovoltaic effect in Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Katiyar, Rajesh K.; Panwar, Neeraj; Morell, G.; Katiyar, Ram S.

    2010-03-01

    Photovoltaic effect in ferroelectric materials is of much interest due to the anomalously large open circuit photovoltages when illuminated. It is concluded that this unprecedented high value of photovoltaic effect is due to the presence of non-centrosymmetry in the ferroelectric materials which gives rise to electron excitation, relaxation, and scattering processes. The photovoltaic efficiencies are, however, limited due to small current densities and the large band gap values of the ferroelectric materials. We have synthesized thin films of BiFeO3 (a low band gap material ˜2.67eV) and ferroelectric material SrBi2Ta2O9(SBT) on silicon substrates with ITO as the bottom electrode. The band gap of the SBT has been decreased by incorporating metallic particles Ag, Pt. in the ferroelectric matrix. The results will be presented.

  2. Advances in Processing of Bulk Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Galassi, Carmen

    The development of ferroelectric bulk materials is still under extensive investigation, as new and challenging issues are growing in relation to their widespread applications. Progress in understanding the fundamental aspects requires adequate technological tools. This would enable controlling and tuning the material properties as well as fully exploiting them into the scale production. Apart from the growing number of new compositions, interest in the first ferroelectrics like BaTiO3 or PZT materials is far from dropping. The need to find new lead-free materials, with as high performance as PZT ceramics, is pushing towards a full exploitation of bariumbased compositions. However, lead-based materials remain the best performing at reasonably low production costs. Therefore, the main trends are towards nano-size effects and miniaturisation, multifunctional materials, integration, and enhancement of the processing ability in powder synthesis. Also, in control of dispersion and packing, to let densification occur in milder conditions. In this chapter, after a general review of the composition and main properties of the principal ferroelectric materials, methods of synthesis are analysed with emphasis on recent results from chemical routes and cold consolidation methods based on the colloidal processing.

  3. Ferromagnetic and ferroelectric nanoparticles in liquid crystals

    NASA Astrophysics Data System (ADS)

    Reznikov, Yuriy; Glushchenko, Anatoliy; Garbovskiy, Yuriy

    This chapter introduces the basic principles of physics of magnetic and ferroelectric nanoparticles suspensions in thermotropic liquid crystals (LCs). It also covers the main features of such suspensions along with the look at the challenges that researchers in the field are facing today. Special attention is paid to understanding of major physical mechanisms responsible for the inuence of nanoparticles on the properties of LCs. In the case of magnetic nanoparticles, their dipole moments are aligned by an external magnetic field that, in turn, results in a reorientation of the LC due to the surface anchoring between the nanoparticles and the LC. This mechanical coupling between the LC and the magnetic particles determines the unique sensitivity of the suspension to magnetic fields. In regard to the ferroelectric particles, their effect on LCs is due to a strong electric field by the permanent electric dipoles of the particles. This field is strong enough to change the orientational ordering of the LC surrounding the particle. In addition, the above-mentioned mechanism of the surface anchoring may also take place. The ongoing scientific and technological problems related to the suspensions are discussed. Among such problems are the stability of the suspensions, selection of the proper surfactants, formation of the particle chains, and the effect of the electric charges on the properties of the ferroelectric liquid crystal suspensions.

  4. Developing a comprehensive electronic health record to enhance nursing care coordination, use of technology, and research.

    PubMed

    Rantz, Marilyn J; Skubic, Marjorie; Alexander, Greg; Popescu, Mihail; Aud, Myra A; Wakefield, Bonnie J; Koopman, Richelle J; Miller, Steven J

    2010-01-01

    As in acute care, use of health information technology in long-term care holds promise for increased efficiency, better accuracy, reduced costs, and improved outcomes. A comprehensive electronic health record (EHR), which encompasses all health care measures that clinicians want to use-both standard health care assessments and those acquired through emerging technology-is the key to improved, efficient clinical decision making. New technologies using sensors to passively monitor older adults at home are being developed and are commercially available. However, integrating the clinical information systems with passive monitoring data so that clinical decision making is enhanced and patient records are complete is challenging. Researchers at the University of Missouri (MU) are developing a comprehensive EHR to: (a) enhance nursing care coordination at TigerPlace, independent senior housing that helps residents age in place; (b) integrate clinical data and data from new technology; and (c) advance technology and clinical research.

  5. Ferroelectric optical image comparator

    DOEpatents

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  6. Ferroelectric optical image comparator

    DOEpatents

    Butler, Michael A.; Land, Cecil E.; Martin, Stephen J.; Pfeifer, Kent B.

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  7. Health information technology: integration of clinical workflow into meaningful use of electronic health records.

    PubMed

    Bowens, Felicia M; Frye, Patricia A; Jones, Warren A

    2010-10-01

    This article examines the role that clinical workflow plays in successful implementation and meaningful use of electronic health record (EHR) technology in ambulatory care. The benefits and barriers of implementing EHRs in ambulatory care settings are discussed. The researchers conclude that widespread adoption and meaningful use of EHR technology rely on the successful integration of health information technology (HIT) into clinical workflow. Without successful integration of HIT into clinical workflow, clinicians in today's ambulatory care settings will continue to resist adoption and implementation of EHR technology.

  8. [New technologies in primary care: people, machines, records, and networks. SESPAS Report 2012].

    PubMed

    Alfaro, Mercedes; Bonis, Julio; Bravo, Rafael; Fluiters, Enrique; Minué, Sergio

    2012-03-01

    The new technologies and the importance of their development in primary care are clear. Technology is important insofar as it helps to resolve practical problems that arise when attempts are made to improve patient care. Many applications can be found under the heading of "new information and communication technologies" in healthcare, but the present article focusses on two of the most significant examples: the electronic health record and the Internet, bearing in mind that the aims being sought and the people using these applications are more significant than the technologies themselves. Copyright © 2011 SESPAS. Published by Elsevier Espana. All rights reserved.

  9. Study of the spatial resolution of laser thermochemical technology for recording diffraction microstructures

    SciTech Connect

    Veiko, V P; Korol'kov, V I; Poleshchuk, A G; Sametov, A R; Shakhno, E A; Yarchuk, M V

    2011-07-31

    The thermochemical method for recording data, which is based on local laser oxidation of a thin metal film with subsequent etching of the unirradiated region, is an alternative to laser photolithography and direct laser removal of the film material. This recording technology is characterised by the absence of thermal and hydrodynamic image distortions, as in the case of laser ablation, and the number of necessary technological operations is much smaller as compared with the photomask preparation in classical photolithography. The main field of application of the thermochemical technology is the fabrication of diffraction optical elements (DOEs), which are widely used in printers, bar-code readers, CD and DVD laser players, etc. The purpose of this study is to increase the resolution of thermochemical data recording on thin chromium films. (interaction of laser radiation with matter)

  10. Nanoscale bit formation in highly (111)-oriented ferroelectric thin films deposited on glass substrates for high-density storage media.

    SciTech Connect

    Kim, D. H.; Kim, Y. K.; Hong, S.; Kim, Y.; Baik, S.

    2011-04-21

    PbTiO{sub 3} (PTO) ferroelectric films on Pt(111) bottom electrode layers covering Ta/glass were prepared using pulsed laser deposition. X-ray diffraction patterns revealed that the PTO films were preferentially (111)-oriented. The films were highly crystalline and had a smooth surface with root mean square (RMS) roughness of 1.5 nm. Ferroelectric properties of the PTO films were characterized using piezoresponse force microscopy (PFM). PFM techniques achieved ferroelectric polarization bits with a minimum width of 22 nm, which corresponds to a potential recording density of 1.3 Tbit/in{sup 2} in ferroelectric storage devices.

  11. Structural and electronic parameters of ferroelectric KWOF

    NASA Astrophysics Data System (ADS)

    Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Aleksandrov, K. S.

    2010-11-01

    The low-temperature ferroelectric G2 polymorph of K 3WO 3F 3 oxyfluoride is formed by chemical synthesis. The electronic parameters of G2-K 3WO 3F 3 have been measured by X-ray photoelectron spectroscopy under excitation with Al Kα radiation (1486.6 eV). Detailed spectra have been recorded for all element core levels and Auger lines. The chemical bonding effects in the WO 3F 3 and WO 6 octahedrons are considered by using the binding energy difference ΔBE(O-W)=BE(O 1s)-BE(W 4f).

  12. Multigap Semiconducting ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Davies, Peter; Rappe, Andrew

    2013-03-01

    The energy conversion efficiency of a solar cell is directly related to the band gap of the material. By doping ferroelectric perovskites with Bi5+ on the B-site, we propose low band-gap materials suitable for bulk photovoltaic effect and related solar applications.Our DFT calculations indicate that the low-lying 6 s empty states of the electronegative Bi atom produce empty isolated bands in the gap of the parent materials, effectively lowering the band gap by 1 ~2eV in various perovskites. Ferroelectricity (and therefore inversion symmetry breaking) weakens but survives upon doping, which enables the ``shift current'' mechanism for photocurrent generation, while the decreased band gap helps absorb low energy photons in the visible range. Furthermore, the existence of multiple band gaps allows for solar conversion devices with efficiency beyond the traditional Shockly-Queisser limit, in which successive photon excitations result in carriers with higher energy than a single-step excitation would achieve.

  13. Ferroelectric tunneling under bias voltages

    NASA Astrophysics Data System (ADS)

    Ma, Z. J.; Chen, G.; Zhou, P.; Mei, Z. H.; Zhang, T. J.

    2017-01-01

    Theoretical investigations of ferroelectric tunneling in a SrRuO3/BaTiO3/Pt junction were conducted, and critical expressions for the surface charge density in the electrodes and the potential distribution across the tunnel junction were derived. It was found that the screening charges associated with the ferroelectric polarization and the charging effect of the capacitor jointly contribute to the charges in the electrodes. A current-voltage study simulating the ‘read’ operation indicated that the tunneling electroresistance effect increases with the ferroelectric thickness, and the tunneling electroresistance values agree well with experimental results.

  14. Spectroscopic signature for ferroelectric ice

    NASA Astrophysics Data System (ADS)

    Wójcik, Marek J.; Gług, Maciej; Boczar, Marek; Boda, Łukasz

    2014-09-01

    Various forms of ice exist within our galaxy. Particularly intriguing type of ice - ‘ferroelectric ice' was discovered experimentally and is stable in temperatures below 72 K. This form of ice can generate enormous electric fields and can play an important role in planetary formation. In this letter we present Car-Parrinello simulation of infrared spectra of ferroelectric ice and compare them with spectra of hexagonal ice. Librational region of the spectra can be treated as spectroscopic signature of ice XI and can be of help to identify ferroelectric ice in the Universe.

  15. Standardized UXO Technology Demonstration Site Blind Grid Scoring Record Number 891

    DTIC Science & Technology

    2008-08-01

    891 (VF Warner and Associates, Inc.) 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) McClung, J. Stephen 5d. PROJECT...Grid. This Scoring Record was coordinated by J. Stephen McClung and the Standardized UXO Technology Demonstration Site Soring Committee. Organizations...SCORING RECORD NO. 891 (VF WARNER AND ASSOCIATES INC.) 8-CO-160-UXO-021 McClung, J. Stephen

  16. Ferroelectricity and tunneling electroresistance effect in asymmetric ferroelectric tunnel junctions

    SciTech Connect

    Tao, L. L.; Wang, J.

    2016-06-14

    We report the investigation on the ferroelectricity and tunneling electroresistance (TER) effect in PbTiO{sub 3} (PTO)-based ferroelectric tunnel junctions (FTJs) using first-principles calculations. For symmetric FTJs, we have calculated the average polarizations of PTO film and effective screening lengths of different metal electrodes for a number of FTJs, which is useful for experimental research. For asymmetric FTJs, significant asymmetric ferroelectric displacements in PTO film are observed, which is attributed to the intrinsic field generated by the two dissimilar electrodes. Moreover, by performing quantum transport calculations on those asymmetric FTJs, a sizable TER effect is observed. It is found that the asymmetry of ferroelectric displacements in PTO barrier, which is determined by the difference of work functions of the electrodes, controls the observed TER effect. Our results will help unravel the TER mechanism of asymmetric FTJs in most experiments and will be useful for the designing of FTJ-based devices.

  17. Standardized UXO Technology Demonstration Site Open Field Scoring Record No. 908

    DTIC Science & Technology

    2008-08-01

    am aware. J. Stephen McClung NAME (Pr!nted) August 2008 DATE C Y i CONCURRENCE: Program Mgr/Customer (If not ATC owned technology) Directorate... Stephen Commander U.S. Army Aberdeen Test Center ATTN: TEDT-AT-SLE Aberdeen Proving Ground, MD 21005-5059...ordnance (UXO) utilizing the APG Standardized UXO Technology Demonstration Site Open Field. This Scoring Record was coordinated by J. Stephen

  18. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    SciTech Connect

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  19. 77 FR 42764 - Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology Royalty Funds...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-20

    ... Copyright Royalty Board Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology... the digital audio recording technology royalty fees in the 2005, 2006, 2007 and 2008 Musical Works... royalties on digital audio recording devices and media that are distributed in the United States. 17...

  20. New technology in dietary assessment: a review of digital methods in improving food record accuracy.

    PubMed

    Stumbo, Phyllis J

    2013-02-01

    Methods for conducting dietary assessment in the United States date back to the early twentieth century. Methods of assessment encompassed dietary records, written and spoken dietary recalls, FFQ using pencil and paper and more recently computer and internet applications. Emerging innovations involve camera and mobile telephone technology to capture food and meal images. This paper describes six projects sponsored by the United States National Institutes of Health that use digital methods to improve food records and two mobile phone applications using crowdsourcing. The techniques under development show promise for improving accuracy of food records.

  1. I-V Characteristics of a Ferroelectric Field Effect Transistor

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen

    1999-01-01

    There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

  2. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    NASA Astrophysics Data System (ADS)

    Ghittorelli, Matteo; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovács-Vajna, Zsolt M.; de Leeuw, Dago M.; Torricelli, Fabrizio

    2017-06-01

    Non-volatile memories--providing the information storage functionality--are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm-2.

  3. Negative-pressure-induced enhancement in a freestanding ferroelectric

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Wylie-van Eerd, Ben; Sluka, Tomas; Sandu, Cosmin; Cantoni, Marco; Wei, Xian-Kui; Kvasov, Alexander; McGilly, Leo John; Gemeiner, Pascale; Dkhil, Brahim; Tagantsev, Alexander; Trodahl, Joe; Setter, Nava

    2015-10-01

    Ferroelectrics are widespread in technology, being used in electronics and communications, medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired. Recent developments have exploited ultrathin epitaxial films on lattice-mismatched substrates, imposing tensile or compressive biaxial strain, to enhance ferroelectric properties. Much larger hydrostatic compression can be achieved by diamond anvil cells, but hydrostatic tensile stress is regarded as unachievable. Theory and ab initio treatments predict enhanced properties for perovskite ferroelectrics under hydrostatic tensile stress. Here we report negative-pressure-driven enhancement of the tetragonality, Curie temperature and spontaneous polarization in freestanding PbTiO3 nanowires, driven by stress that develops during transformation of the material from a lower-density crystal structure to the perovskite phase. This study suggests a simple route to obtain negative pressure in other materials, potentially extending their exploitable properties beyond their present levels.

  4. Ferroelectric capacitor with reduced imprint

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  5. Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

    NASA Technical Reports Server (NTRS)

    VanKeuls, Frederick W.

    1999-01-01

    Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

  6. Ferroelectric infrared detector and method

    DOEpatents

    Lashley, Jason Charles; Opeil, Cyril P.; Smith, James Lawrence

    2010-03-30

    An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a .lamda. shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

  7. Ferroelectric Fluoride Memory FET Development

    DTIC Science & Technology

    1993-10-01

    After’ First Metal Definition ..................... 53 Figure 3-30: Initial BMF FEMFETs Demonstrated Ferroelectric Behavior ................ 57 I Figure...as bismuth titanate. 2.0 INTRODUCTION The concept of a thin film ferroelectric memory field-effect transistor (FEMFET) is not new. The first FEMFET...candidate for these studies. BaF2, and MgF 2 have similar melting and evaporation temperatures, and their vapor pressures were also found to be comparable

  8. Hybridity as a process of technology's 'translation': customizing a national Electronic Patient Record.

    PubMed

    Petrakaki, Dimitra; Klecun, Ela

    2015-01-01

    This paper explores how national Electronic Patient Record (EPR) systems are customized in local settings and, in particular, how the context of their origin plays out with the context of their use. It shows how representations of healthcare organizations and of local clinical practice are built into EPR systems within a complex context whereby different stakeholder groups negotiate to produce an EPR package that aims to meet both local and generic needs. The paper draws from research into the implementation of the National Care Record Service, a part of the National Programme for Information Technology (NPfIT), in the English National Health Service (NHS). The paper makes two arguments. First, customization of national EPR is a distributed process that involves cycles of 'translation', which span across geographical, cultural and professional boundaries. Second, 'translation' is an inherently political process during which hybrid technology gets consolidated. The paper concludes, that hybrid technology opens up possibilities for standardization of healthcare.

  9. A Community Health Record: Improving Health Through Multisector Collaboration, Information Sharing, and Technology

    PubMed Central

    Garrett, Nedra; Kriseman, Jeffrey; Crum, Melvin; Rafalski, Edward M.; Sweat, David; Frazier, Renee; Schearer, Sue; Cutts, Teresa

    2016-01-01

    We present a framework for developing a community health record to bring stakeholders, information, and technology together to collectively improve the health of a community. It is both social and technical in nature and presents an iterative and participatory process for achieving multisector collaboration and information sharing. It proposes a methodology and infrastructure for bringing multisector stakeholders and their information together to inform, target, monitor, and evaluate community health initiatives. The community health record is defined as both the proposed framework and a tool or system for integrating and transforming multisector data into actionable information. It is informed by the electronic health record, personal health record, and County Health Ranking systems but differs in its social complexity, communal ownership, and provision of information to multisector partners at scales ranging from address to zip code. PMID:27609300

  10. HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zheng-Ran; Han, Zu-Yin; Jung, Hyung-Suk

    2016-10-01

    Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology. Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

  11. A CMOS compatible, ferroelectric tunnel junction.

    PubMed

    Ambriz Vargas, Fabian; Kolhatkar, Gitanjali; Broyer, Maxime; Hadj Youssef, Azza; Nouar, Rafik; Sarkissian, Andranik; Thomas, Reji; Gomez-Yanez, Carlos; Gauthier, Marc A; Ruediger, Andreas

    2017-04-03

    In recent years, the experimental demonstration of Ferroelectric Tunnel Junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). The present communication reports the fabrication of an FTJ based on a CMOS compatible tunnel barrier Hf0.5Zr0.5O2 (6 unit cells thick) on an equally CMOS compatible TiN electrode. Analysis of the FTJ by grazing angle incidence X-ray diffraction confirmed the formation of the non-centrosymmetric orthorhombic phase (Pbc2_1, ferroelectric phase). The FTJ characterization is followed by the reconstruction of the electrostatic potential profile in the as-grown TiN/Hf0.5Zr0.5O2/Pt heterostructure. A direct tunneling current model across a trapezoidal barrier was used to correlate the electronic and electrical properties of our FTJ devices. The good agreement between the experimental and the theoretical model attests to the tunneling electroresistance effect (TER) in our FTJ device. A TER ratio of ~15 was calculated for the present FTJ device at low read voltage (+0.2 V). This study makes Hf0.5Zr0.5O2 a promising candidate for integration into conventional Si memory technology.

  12. A wireless recording system that utilizes Bluetooth technology to transmit neural activity in freely moving animals

    PubMed Central

    Hampson, Robert E.; Collins, Vernell; Deadwyler, Sam A.

    2009-01-01

    A new wireless transceiver is described for recording individual neuron firing from behaving rats utilizing Bluetooth transmission technology and a processor onboard for discrimination of neuronal waveforms and associated time stamps. This universal brain activity transmitter (UBAT) is attached to rodents via a backpack and amplifier headstage and can transmit 16 channels of captured neuronal firing data via a Bluetooth transceiver chip over very large and unconstrained distances. The onboard microprocessor of the UBAT allows flexible online control over waveform isolation criteria via transceiver instruction and the two-way communication capacity allows for closed-loop applications between neural events and behavioral or physiological processes which can be modified by transceiver instructions. A detailed description of the multiplexer processing of channel data as well as examples of neuronal recordings in different behavioral testing contexts is provided to demonstrate the capacity for robust transmission within almost any laboratory environment. A major advantage of the UBAT is the long transmission range and lack of object-based line of sight interference afforded by Bluetooth technology, allowing flexible recording capabilities within multiple experimental paradigms without interruption. Continuous recordings over very large distance separations from the monitor station are demonstrated providing experimenters with recording advantages not previously available with other telemetry devices. PMID:19524612

  13. A wireless recording system that utilizes Bluetooth technology to transmit neural activity in freely moving animals.

    PubMed

    Hampson, Robert E; Collins, Vernell; Deadwyler, Sam A

    2009-09-15

    A new wireless transceiver is described for recording individual neuron firing from behaving rats utilizing Bluetooth transmission technology and a processor onboard for discrimination of neuronal waveforms and associated time stamps. This universal brain activity transmitter (UBAT) is attached to rodents via a backpack and amplifier headstage and can transmit 16 channels of captured neuronal firing data via a Bluetooth transceiver chip over very large and unconstrained distances. The onboard microprocessor of the UBAT allows flexible online control over waveform isolation criteria via transceiver instruction and the two-way communication capacity allows for closed-loop applications between neural events and behavioral or physiological processes which can be modified by transceiver instructions. A detailed description of the multiplexer processing of channel data as well as examples of neuronal recordings in different behavioral testing contexts is provided to demonstrate the capacity for robust transmission within almost any laboratory environment. A major advantage of the UBAT is the long transmission range and lack of object-based line of sight interference afforded by Bluetooth technology, allowing flexible recording capabilities within multiple experimental paradigms without interruption. Continuous recordings over very large distance separations from the monitor station are demonstrated providing experimenters with recording advantages not previously available with other telemetry devices.

  14. Electron emission from ferroelectrics - a review

    NASA Astrophysics Data System (ADS)

    Riege, H.

    1994-02-01

    The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

  15. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    PubMed Central

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  16. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

    PubMed

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-28

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  17. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  18. Incorporating Pharmacogenomics into Health Information Technology, Electronic Health Record and Decision Support System: An Overview.

    PubMed

    Alanazi, Abdullah

    2017-02-01

    As the adoption of information technology in healthcare is rising, the potentiality of moving Pharmacogenomics from benchside to bedside is aggravated. This paper reviews the current status of Pharmacogenomics (PGx) information and the attempts for incorporating them into the Electronic Health Record (EHR) system through Decision Support Systems (DSSs). Rigorous review strategies of PGx information and providing context-relevant recommendations in form of action plan- dose adjustment, lab tests rather than just information- would be ideal for making clinical recommendations out of PGx information. Lastly, realistic projections of what pharmacogenomics can provide is another important aspect in incorporating Pharmacogenomics into health information technology.

  19. Ferroelectricity in undoped hafnium oxide

    SciTech Connect

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  20. Ferroelectric or non-ferroelectric: Why so many materials exhibit "ferroelectricity" on the nanoscale

    NASA Astrophysics Data System (ADS)

    Vasudevan, Rama K.; Balke, Nina; Maksymovych, Peter; Jesse, Stephen; Kalinin, Sergei V.

    2017-06-01

    Ferroelectric materials have remained one of the major focal points of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time- and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures and walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize ["The Nobel Prize in Chemistry 2016," http://www.nobelprize.org/nobel_prizes/chemistry/laureates/2016/ (Nobel Media, 2016)] in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on the nearly ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors and possible experimental strategies for their identification.

  1. CIS5/405: Web Technology in Healthcare - Delivering Electronic Records Using the Clinical Intranet

    PubMed Central

    Berger, M

    1999-01-01

    Introduction The development of electronic records - EPR & EHR (Electronic Patient Records & Electronic Health Records) - requires the use of innovative technology. With the emergence of web enabled applications, that technology is now available. In this paper, we consider the opportunities afforded by web technology and articulate their vision for making electronic records an affordable reality through the use of the ViewMax Integration Server. It is designed to be used as a discussion document for Health Authorities, Primary Care Groups and Trusts when considering their shared strategies for building electronic records. Methods Hospitals that have developed, or are developing EPR, have generally adopted one of the following approaches: Big Bang solutions or Interfaced solutions. Whilst both of these models have their merits, both also have significant limitations and disadvantages. With the advent of web technology, a "third way" has emerged. Through the development of e-commerce in the commercial sector, sophisticated Host-to-Web integration tools are now available, providing facilities which would have seemed impossible only a few years ago: Systems can now be integrated and accessed through an industry standard web browser. Legacy systems can be provided with a modern, intuitive interface, designed to support the needs of particular groups of users, and data from multiple, disparate systems, applications and screens can be combined into a single web page. Data from one system can be easily transferred to other applications. New applications developed using modern databases can be seamlessly integrated with existing host systems. Most importantly, this new approach enables full interactive access to legacy technologies using a browser, without requiring any modification to host systems. Utilising the latest Web integration tools it is now possible to incrementally develop cost-effective electronic records. Results The hospital is an average acute district

  2. Stress effects in ferroelectric perovskite thin-films

    NASA Astrophysics Data System (ADS)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  3. Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films

    DTIC Science & Technology

    2016-03-31

    Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films Steven J. Brewer1, Carmen Z. Deng2, Connor P...Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA 2School of Materials Science and Engineering... material . These results suggest promising avenues to radiation-hard devices and material stacks. Introduction Ferroelectric thin films enable numerous

  4. New Ferroelectric Aminoguanidinium Hexafluorozirconate

    NASA Astrophysics Data System (ADS)

    Bauer, Matt; Arbogast, Darin; Gallagher, Craig; Christie, Jim; Pugmire, David; Paulsen, Brian; Ross, Charles; Photinos, Panos; Nielson, Roger; Abrahams, Sidney C.

    2000-03-01

    Satisfaction of structural criteria led to the prediction that anhydrous aminoguanidinium hexafluorozirconate CN_4H_8ZrF6 is a new ferroelectric. Calorimetric and dielectric permittivity measurements reveal a highly-reproducible anomaly at the Curie temperature Tc = 383(1) K. The heat capacity undergoes an entropy change of 0.7(1) J mol-1 K-1 at Tc as the relative permittivity increases sharply by nearly an order of magnitude. Dielectric hysteresis at 295 K under the application of 1 MV m-1 ac is also observed at all T < Tc but not at T > T_c, confirming the prediction. Saturation is not reached before electric breakdown above 1 MV m-1 ac. The piezoelectric coefficient d_33 = 1.9 pC N-1 at 298 K. Polarisation reversal requires each symmetry-independent CN_4H_8^+2 ion to tilt and both N NH3 and C (NH_2)2 groups to rotate about the C N bond. Small atomic displacements within the ZrF_6-2 anion lead to mirror symmetry in course of the phase transition.

  5. New Advanced Technologies to Provide Decentralised and Secure Access to Medical Records: Case Studies in Oncology

    PubMed Central

    Quantin, Catherine; Coatrieux, Gouenou; Allaert, François André; Fassa, Maniane; Bourquard, Karima; Boire, Jean-Yves; de Vlieger, Paul; Maigne, Lydia; Breton, Vincent

    2009-01-01

    The main problem for health professionals and patients in accessing information is that this information is very often distributed over many medical records and locations. This problem is particularly acute in cancerology because patients may be treated for many years and undergo a variety of examinations. Recent advances in technology make it feasible to gain access to medical records anywhere and anytime, allowing the physician or the patient to gather information from an “ephemeral electronic patient record”. However, this easy access to data is accompanied by the requirement for improved security (confidentiality, traceability, integrity, ...) and this issue needs to be addressed. In this paper we propose and discuss a decentralised approach based on recent advances in information sharing and protection: Grid technologies and watermarking methodologies. The potential impact of these technologies for oncology is illustrated by the examples of two experimental cases: a cancer surveillance network and a radiotherapy treatment plan. It is expected that the proposed approach will constitute the basis of a future secure “google-like” access to medical records. PMID:19718446

  6. Integrating health information technology and electronic health records into the management of fibromyalgia.

    PubMed

    Wells, Alvin F; Arnold, Lesley M; Curtis, Cassandra E; Dunegan, L Jean; Lapp, Charles W; McCarberg, Bill H; Clair, Andrew

    2013-07-01

    Fibromyalgia (FM) is a widespread chronic pain condition that represents a significant economic burden for patients and health care systems. Effective treatment of FM requires a multidisciplinary management strategy that incorporates pharmacologic and nonpharmacologic therapy. Steps such as reducing the time to diagnosis and improving treatment decisions can result in significant cost savings and improved patient outcomes. An FM management framework, based on patient education and goal setting, has emphasized the need for ongoing care of patients with FM. In this article, we discuss how this framework could be further improved through the use of health information technology, including electronic health records. Health information technology/electronic health records can be incorporated at every stage of patient care, from initial presentation to diagnosis, through to making treatment decisions and maintaining ongoing patient management. This can lead to a number of potential benefits for patients with FM (by improving their level of care), primary care providers (by creating greater efficiencies), and the health care system (by reducing costs). Ultimately, the treatment and care of patients with FM need be no more burdensome to primary care providers than any other chronic illness. Through the greater efficiencies and optimized treatment approaches facilitated by health information technology/electronic health records, it should be possible to drive best-practice care for patients with FM and improve patient outcomes.

  7. Ferroelectric order in liquid crystal phases of polar disk-shaped ellipsoids

    NASA Astrophysics Data System (ADS)

    Bose, Tushar Kanti; Saha, Jayashree

    2014-05-01

    The demonstration of a spontaneous macroscopic ferroelectric order in liquid phases in the absence of any long range positional order is considered an outstanding problem of both fundamental and technological interest. Recently, we reported that a system of polar achiral disklike ellipsoids can spontaneously exhibit a long searched ferroelectric nematic phase and a ferroelectric columnar phase with strong axial polarization. The major role is played by the dipolar interactions. The model system of interest consists of attractive-repulsive Gay-Berne oblate ellipsoids embedded with two parallel point dipoles positioned symmetrically on the equatorial plane of the ellipsoids. In the present work, we investigate in detail the profound effects of changing the separation between the two symmetrically placed dipoles and the strength of the dipoles upon the existence of different ferroelectric discotic liquid crystal phases via extensive off-lattice N-P-T Monte Carlo simulations. Ferroelectric biaxial phases are exhibited in addition to the uniaxial ferroelectric fluids where the phase biaxiality results from the dipolar interactions. The structures of all the ferroelectric configurations of interest are presented in detail. Simple phase diagrams are determined which include different polar and apolar discotic fluids generated by the system.

  8. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    SciTech Connect

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  9. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    DOE PAGES

    Tselev, Alexander; Yu, Pu; Cao, Ye; ...

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphologicalmore » roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.« less

  10. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-05-01

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  11. Microwave a.c. conductivity of domain walls in ferroelectric thin films.

    PubMed

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  12. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    PubMed Central

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-01-01

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997

  13. Health information technology: initial set of standards, implementation specifications, and certification criteria for electronic health record technology. Interim final rule.

    PubMed

    2010-01-13

    The Department of Health and Human Services (HHS) is issuing this interim final rule with a request for comments to adopt an initial set of standards, implementation specifications, and certification criteria, as required by section 3004(b)(1) of the Public Health Service Act. This interim final rule represents the first step in an incremental approach to adopting standards, implementation specifications, and certification criteria to enhance the interoperability, functionality, utility, and security of health information technology and to support its meaningful use. The certification criteria adopted in this initial set establish the capabilities and related standards that certified electronic health record (EHR) technology will need to include in order to, at a minimum, support the achievement of the proposed meaningful use Stage 1 (beginning in 2011) by eligible professionals and eligible hospitals under the Medicare and Medicaid EHR Incentive Programs.

  14. Polarization switching in ferroelectric cathodes

    SciTech Connect

    Rosenman, G.; Shur, D.; Garb, K.; Cohen, R.; Krasik, Y.E.

    1997-07-01

    A new mechanism of polarization switching and electron emission in ferroelectric cathodes is proposed. Surface flashover plasma of a ferroelectric origin was observed on a polar ferroelectric surface [D. Shur, G. Rosenman, and Ya. E. Krasik, Appl. Phys. Lett. {bold 70}, 574 (1997)]. Simultaneous measurements of switched charge and plasma density show that expanding surface plasma represents a dynamic switching electrode. Direct measurements of ion/electron emission currents and surface analysis implemented by different analytic tools indicate that electrons and ions from the surface plasma contribute to spontaneous polarization screening. The high energy of charged particles emitted from the surface plasma is ascribed to a high surface potential during polarization switching. {copyright} {ital 1997 American Institute of Physics.}

  15. Ferroelectrics as Smart Mechanical Materials.

    PubMed

    Cordero-Edwards, Kumara; Domingo, Neus; Abdollahi, Amir; Sort, Jordi; Catalan, Gustau

    2017-10-01

    The mechanical properties of materials are insensitive to space inversion, even when they are crystallographically asymmetric. In practice, this means that turning a piezoelectric crystal upside down or switching the polarization of a ferroelectric should not change its mechanical response. Strain gradients, however, introduce an additional source of asymmetry that has mechanical consequences. Using nanoindentation and contact-resonance force microscopy, this study demonstrates that the mechanical response to indentation of a uniaxial ferroelectric (LiNbO3 ) does change when its polarity is switched, and use this mechanical asymmetry both to quantify its flexoelectricity and to mechanically read the sign of its ferroelectric domains. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Electrocaloric effect in ferroelectric polymers

    NASA Astrophysics Data System (ADS)

    Lu, S. G.; Rozic, B.; Zhang, Q. M.; Kutnjak, Z.; Pirc, R.

    2012-06-01

    The electrocaloric effect (ECE) of poly (vinyledene fluoride-trifluoroethylene) (P(VDF-TrFE)) 55/45 mol% copolymers was directly measured, which confirms the results deduced from Maxwell relation. The adiabatic temperature change Δ T under a given electric field peaks at the ferroelectric-paraelectric (FE-PE) transition. Away from it, ECE becomes small. Δ T versus applied electric field can be described well by a modified Belov-Goryaga equation. The ECE in ferroelectric polymers, especially near FE-PE transition where larger ECE is observed, are analyzed under different boundary conditions employing phenomenological theory and constitutive equations. The secondary pyroelectricity is found to play a significant role which enhances ECE in ferroelectric polymers.

  17. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  18. Magnetoelectric effect in doped magnetic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Udalov, O. G.; Beloborodov, I. S.

    2017-07-01

    We propose a model of magnetoelectric effect in doped magnetic ferroelectrics. This magnetoelectric effect does not involve the spin-orbit coupling and is based purely on the Coulomb interaction. We calculate magnetic phase diagram of doped magnetic ferroelectrics. We show that magnetoelectric coupling is pronounced only for ferroelectrics with low dielectric constant. We find that magnetoelectric coupling leads to modification of magnetization temperature dependence in the vicinity of the ferroelectric phase transition. A peak of magnetization appears. We find that magnetization of doped magnetic ferroelectrics strongly depends on the applied electric field.

  19. Guide to the Records Relating to Science and Technology in the British Public Record Office: A RAMP Study.

    ERIC Educational Resources Information Center

    Jubb, Michael

    Prepared under contract with the International Council on Archives (ICA), this guide provides descriptions of all classes of public records held by the British Public Record Office (PRO) which are likely to contain scientific or technical information. The PRO is responsible for keeping and making available to the public those records of the…

  20. Guide to the Records Relating to Science and Technology in the British Public Record Office: A RAMP Study.

    ERIC Educational Resources Information Center

    Jubb, Michael

    Prepared under contract with the International Council on Archives (ICA), this guide provides descriptions of all classes of public records held by the British Public Record Office (PRO) which are likely to contain scientific or technical information. The PRO is responsible for keeping and making available to the public those records of the…

  1. Doped liquid nitrobenzene is ferroelectric.

    PubMed

    Shelton, David P; Quine, Zachary

    2007-11-28

    The high resolution hyper-Rayleigh light scattering spectrum for liquid nitrobenzene doped with triflic acid (CF(3)SO(3)H) shows a narrow spike at zero frequency shift which has the polarization signature of a polar longitudinal collective mode. This spectral spike disappears for pure nitrobenzene. The spectral spike is interpreted as due to ferroelectric domains in the liquid. The dopant molecules appear to induce ferroelectric organization of the nitrobenzene molecules which is otherwise absent in the pure liquid. Estimated domain size is 34 nm and relaxation time is 50 ns.

  2. Elastocaloric effect in ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chauhan, Aditya; Patel, Satyanarayan; Vaish, Rahul

    2015-04-01

    Elastocaloric effect has been experimentally demonstrated in bulk (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 polycrystalline ferroelectric material. Predictions were made using Maxwell's relationship for elastocaloric effect. A maximum elastocaloric effect of 1.55 K was observed for an initial material temperature of 340 K and applied compressive stress of 0-250 MPa (under a constant electric field of 2 MV m-1). The reported value is several times larger than the peak electrocaloric effect for the same material. The results indicate that ferroelectric materials possess a huge potential for elastocaloric refrigeration.

  3. Ferroelectric Fluid Flow Control Valve

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  4. Ferroelectric control of spin polarization.

    PubMed

    Garcia, V; Bibes, M; Bocher, L; Valencia, S; Kronast, F; Crassous, A; Moya, X; Enouz-Vedrenne, S; Gloter, A; Imhoff, D; Deranlot, C; Mathur, N D; Fusil, S; Bouzehouane, K; Barthélémy, A

    2010-02-26

    A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

  5. Ferroelectric thin-film active sensors for structural health monitoring

    NASA Astrophysics Data System (ADS)

    Lin, Bin; Giurgiutiu, Victor; Yuan, Zheng; Liu, Jian; Chen, Chonglin; Jiang, Jiechao; Bhalla, Amar S.; Guo, Ruyan

    2007-04-01

    Piezoelectric wafer active sensors (PWAS) have been proven a valuable tool in structural health monitoring. Piezoelectric wafer active sensors are able to send and receive guided Lamb/Rayleigh waves that scan the structure and detect the presence of incipient cracks and structural damage. In-situ thin-film active sensor deposition can eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch. Ferroelectric thin films have been shown to have piezoelectric properties that are close to those of single-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium, etc.) has not been yet attempted. In this work, in-situ fabrication method of piezoelectric thin-film active sensors arrays was developed using the nano technology approach. Specification for the piezoelectric thin-film active sensors arrays was based on electro-mechanical-acoustical model. Ferroelectric BaTiO3 (BTO) thin films were successfully deposited on Ni tapes by pulsed laser deposition under the optimal synthesis conditions. Microstructural studies by X-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO thin films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. The research objective is to develop the fabrication and optimum design of thin-film active sensor arrays for structural health monitoring applications. The short wavelengths of the micro phased arrays will permit the phased-array imaging of smaller parts and smaller damage than is currently not possible with existing technology.

  6. Polar Superhelices in Ferroelectric Chiral Nanosprings

    PubMed Central

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jian-Shan; Wang, Jie; Kitamura, Takayuki

    2016-01-01

    Topological objects of nontrivial spin or dipolar field textures, such as skyrmions, merons, and vortices, interacting with applied external fields in ferroic materials are of great scientific interest as an intriguing playground of unique physical phenomena and novel technological paradigms. The quest for new topological configurations of such swirling field textures has primarily been done for magnets with Dzyaloshinskii-Moriya interactions, while the absence of such intrinsic chiral interactions among electric dipoles left ferroelectrics aside in this quest. Here, we demonstrate that a helical polarization coiled into another helix, namely a polar superhelix, can be extrinsically stabilized in ferroelectric nanosprings. The interplay between dipolar interactions confined in the chiral geometry and the complex strain field of mixed bending and twisting induces the superhelical configuration of electric polarization. The geometrical structure of the polar superhelix gives rise to electric chiralities at two different length scales and the coexistence of three order parameters, i.e., polarization, toroidization, and hypertoroidization, both of which can be manipulated by homogeneous electric and/or mechanical fields. Our work therefore provides a new geometrical configuration of swirling dipolar fields, which offers the possibility of multiple order-parameters, and electromechanically controllable dipolar chiralities and associated electro-optical responses. PMID:27713540

  7. Polar Superhelices in Ferroelectric Chiral Nanosprings

    NASA Astrophysics Data System (ADS)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jian-Shan; Wang, Jie; Kitamura, Takayuki

    2016-10-01

    Topological objects of nontrivial spin or dipolar field textures, such as skyrmions, merons, and vortices, interacting with applied external fields in ferroic materials are of great scientific interest as an intriguing playground of unique physical phenomena and novel technological paradigms. The quest for new topological configurations of such swirling field textures has primarily been done for magnets with Dzyaloshinskii-Moriya interactions, while the absence of such intrinsic chiral interactions among electric dipoles left ferroelectrics aside in this quest. Here, we demonstrate that a helical polarization coiled into another helix, namely a polar superhelix, can be extrinsically stabilized in ferroelectric nanosprings. The interplay between dipolar interactions confined in the chiral geometry and the complex strain field of mixed bending and twisting induces the superhelical configuration of electric polarization. The geometrical structure of the polar superhelix gives rise to electric chiralities at two different length scales and the coexistence of three order parameters, i.e., polarization, toroidization, and hypertoroidization, both of which can be manipulated by homogeneous electric and/or mechanical fields. Our work therefore provides a new geometrical configuration of swirling dipolar fields, which offers the possibility of multiple order-parameters, and electromechanically controllable dipolar chiralities and associated electro-optical responses.

  8. Reversible spin texture in ferroelectric Hf O2

    NASA Astrophysics Data System (ADS)

    Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

    2017-06-01

    Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

  9. A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

    PubMed

    Lee, June Hyuk; Fang, Lei; Vlahos, Eftihia; Ke, Xianglin; Jung, Young Woo; Kourkoutis, Lena Fitting; Kim, Jong-Woo; Ryan, Philip J; Heeg, Tassilo; Roeckerath, Martin; Goian, Veronica; Bernhagen, Margitta; Uecker, Reinhard; Hammel, P Chris; Rabe, Karin M; Kamba, Stanislav; Schubert, Jürgen; Freeland, John W; Muller, David A; Fennie, Craig J; Schiffer, Peter; Gopalan, Venkatraman; Johnston-Halperin, Ezekiel; Schlom, Darrell G

    2010-08-19

    Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high

  10. A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

    SciTech Connect

    Lee, J. H.; Fang, L.; Vlahos, E.; Ke, X.; Jung, Y.W.; Fitting Kourkaoutis, L.; Kim, J. W.; Ryan, P.; Heeg, T.; Roeckerath, M.; Goian, V.; Bernhagen, M.; Uecker, R.; Hammel, P.C.; Rabe, K. M.; Kamba, S.; Schubert, J.; Freeland, J.W.; Muller, D.A.; Fennie, C.J.; Schiffer, P.; Gopalan, V.; Johnston-Halperin, E.; Schlom, D. G.

    2010-08-19

    Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO{sub 3}, was predicted to exhibit strong ferromagnetism (spontaneous magnetization, {approx}7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, {approx}10 {micro}C cm{sup -2}) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high

  11. Health information technology: standards, implementation specifications, and certification criteria for electronic health record technology, 2014 edition; revisions to the permanent certification program for health information technology. Final rule.

    PubMed

    2012-09-04

    With this final rule, the Secretary of Health and Human Services adopts certification criteria that establish the technical capabilities and specify the related standards and implementation specifications that Certified Electronic Health Record (EHR) Technology will need to include to, at a minimum, support the achievement of meaningful use by eligible professionals, eligible hospitals, and critical access hospitals under the Medicare and Medicaid EHR Incentive Programs beginning with the EHR reporting periods in fiscal year and calendar year 2014. This final rule also makes changes to the permanent certification program for health information technology, including changing the program's name to the ONC HIT Certification Program.

  12. An overview of advanced nonvolatile memory technologies

    SciTech Connect

    Dressendorfer, P.V.

    1991-01-01

    This report is an overview of advanced nonvolatile memory technologies. The memory technologies discussed are: floating gate nonvolatile memory technologies; SNOS nonvolatile technology; ferroelectric technology; and thin film magnetic memories.

  13. Genetic data and electronic health records: a discussion of ethical, logistical and technological considerations

    PubMed Central

    Shoenbill, Kimberly; Fost, Norman; Tachinardi, Umberto; Mendonca, Eneida A

    2014-01-01

    Objective The completion of sequencing the human genome in 2003 has spurred the production and collection of genetic data at ever increasing rates. Genetic data obtained for clinical purposes, as is true for all results of clinical tests, are expected to be included in patients’ medical records. With this explosion of information, questions of what, when, where and how to incorporate genetic data into electronic health records (EHRs) have reached a critical point. In order to answer these questions fully, this paper addresses the ethical, logistical and technological issues involved in incorporating these data into EHRs. Materials and methods This paper reviews journal articles, government documents and websites relevant to the ethics, genetics and informatics domains as they pertain to EHRs. Results and discussion The authors explore concerns and tasks facing health information technology (HIT) developers at the intersection of ethics, genetics, and technology as applied to EHR development. Conclusions By ensuring the efficient and effective incorporation of genetic data into EHRs, HIT developers will play a key role in facilitating the delivery of personalized medicine. PMID:23771953

  14. Genetic data and electronic health records: a discussion of ethical, logistical and technological considerations.

    PubMed

    Shoenbill, Kimberly; Fost, Norman; Tachinardi, Umberto; Mendonca, Eneida A

    2014-01-01

    The completion of sequencing the human genome in 2003 has spurred the production and collection of genetic data at ever increasing rates. Genetic data obtained for clinical purposes, as is true for all results of clinical tests, are expected to be included in patients' medical records. With this explosion of information, questions of what, when, where and how to incorporate genetic data into electronic health records (EHRs) have reached a critical point. In order to answer these questions fully, this paper addresses the ethical, logistical and technological issues involved in incorporating these data into EHRs. This paper reviews journal articles, government documents and websites relevant to the ethics, genetics and informatics domains as they pertain to EHRs. The authors explore concerns and tasks facing health information technology (HIT) developers at the intersection of ethics, genetics, and technology as applied to EHR development. By ensuring the efficient and effective incorporation of genetic data into EHRs, HIT developers will play a key role in facilitating the delivery of personalized medicine.

  15. Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

    DOE PAGES

    Dhak, Debasis; Hong, Seungbum; Das, Soma; ...

    2015-01-01

    Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolutionmore » of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices.« less

  16. Electronic Medical Records and the Technological Imperative: The Retrieval of Dialogue in Community-Based Primary Care.

    PubMed

    Franz, Berkeley; Murphy, John W

    2015-01-01

    Electronic medical records are regarded as an important tool in primary health-care settings. Because these records are thought to standardize medical information, facilitate provider communication, and improve office efficiency, many practices are transitioning to these systems. However, much of the concern with improving the practice of record keeping has related to technological innovations and human-computer interaction. Drawing on the philosophical reflection raised in Jacques Ellul's work, this article questions the technological imperative that may be supporting medical record keeping. Furthermore, given the growing emphasis on community-based care, this article discusses important non-technological aspects of electronic medical records that might bring the use of these records in line with participatory primary-care medicine.

  17. Single event upset immunity of strontium bismuth tantalate ferroelectric memories

    SciTech Connect

    Benedetto, J.M.; Derbenwick, G.F.; Cuchiaro, J.D.

    1999-12-01

    An embedded 1Kbit non-volatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm{sup 2}/mg and a total fluence of 1.5 x 10{sup 7} ions/cm{sup 2}). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology.

  18. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    SciTech Connect

    Guo, Hanzheng

    2014-12-15

    Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

  19. How Communities Are Leveraging the Health Information Technology Workforce to Implement Electronic Health Records

    PubMed Central

    Richardson, Joshua E.; Abramson, Erika L.; Pfoh, Elizabeth R.; Kaushal, Rainu

    2011-01-01

    Developing a health information technology (HIT) workforce is critical for health care transformation and has taken on added urgency as federal and state governments incentivize providers to implement and adopt electronic health records (EHRs) by 2015. We conducted in-depth interviews with HIT workers in three communities throughout New York State that received state funding to implement EHRs in order to characterize the skilled workforce in each community and compare their roles to the HIT workforce roles recently outlined by the Office of the National Coordinator (ONC). We found that workers were placed within different organizational models, possessed a variety of backgrounds, and carried out implementations by addressing work gaps between technologies, processes, and personnel. Workers’ self-described roles fit ONC’s defined workforce roles but appeared to differ in how those roles were operationalized. This paper describes how communities are utilizing available workforce that may inform state and federal training programs. PMID:22195179

  20. Frequency/phase agile microwave circuits on ferroelectric films

    NASA Astrophysics Data System (ADS)

    Romanofsky, Robert Raymond

    This work describes novel microwave circuits that can be tuned in either frequency or phase through the use of nonlinear dielectrics, specifically thin ferroelectric films. These frequency and phase agile circuits in many cases provide a new capability or offer the potential for lower cost alternatives in satellite and terrestrial communications and sensor applications. A brief introduction to nonlinear dielectrics and a summary of some of the special challenges confronting the practical insertion of ferroelectric technology into commercial systems is provided. A theoretical solution for the propagation characteristics of the multi-layer structures, with emphasis on a new type of phase shifter based on coupled microstrip, lines, is developed. The quasi-TEM analysis is based on a variational solution for line capacitance and an extension of coupled transmission line theory. It is shown that the theoretical model is applicable to a broad class of multi-layer transmission lines. The critical role that ferroelectric film thickness plays in loss and phase-shift is closely examined. Experimental data for both thin film BaxSr1-xTiO 3 phase shifters near room temperature and SMO3 phase shifters at cryogenic temperatures on MgO and LaAlO3 substrates is included. Some of these devices demonstrated an insertion loss of less than 5 dB at Ku-band with continuously variable phase shift in excess of 360 degrees. The performance of these devices is superior to the state-of-the-art semiconductor counterparts. Frequency and phase agile antenna prototypes including a microstrip patch that can operate at multiple microwave frequency bands and a new type of phased array antenna concept called the ferroelectric reflectarray are introduced. Modeled data for tunable microstrip patch antennas is presented for various ferroelectric film thickness. A prototype linear phased array, with a conventional beam-forming manifold, and an electronic controller is described. This is the first

  1. Leveraging electronic healthcare record standards and semantic web technologies for the identification of patient cohorts

    PubMed Central

    Fernández-Breis, Jesualdo Tomás; Maldonado, José Alberto; Marcos, Mar; Legaz-García, María del Carmen; Moner, David; Torres-Sospedra, Joaquín; Esteban-Gil, Angel; Martínez-Salvador, Begoña; Robles, Montserrat

    2013-01-01

    Background The secondary use of electronic healthcare records (EHRs) often requires the identification of patient cohorts. In this context, an important problem is the heterogeneity of clinical data sources, which can be overcome with the combined use of standardized information models, virtual health records, and semantic technologies, since each of them contributes to solving aspects related to the semantic interoperability of EHR data. Objective To develop methods allowing for a direct use of EHR data for the identification of patient cohorts leveraging current EHR standards and semantic web technologies. Materials and methods We propose to take advantage of the best features of working with EHR standards and ontologies. Our proposal is based on our previous results and experience working with both technological infrastructures. Our main principle is to perform each activity at the abstraction level with the most appropriate technology available. This means that part of the processing will be performed using archetypes (ie, data level) and the rest using ontologies (ie, knowledge level). Our approach will start working with EHR data in proprietary format, which will be first normalized and elaborated using EHR standards and then transformed into a semantic representation, which will be exploited by automated reasoning. Results We have applied our approach to protocols for colorectal cancer screening. The results comprise the archetypes, ontologies, and datasets developed for the standardization and semantic analysis of EHR data. Anonymized real data have been used and the patients have been successfully classified by the risk of developing colorectal cancer. Conclusions This work provides new insights in how archetypes and ontologies can be effectively combined for EHR-driven phenotyping. The methodological approach can be applied to other problems provided that suitable archetypes, ontologies, and classification rules can be designed. PMID:23934950

  2. Leveraging electronic healthcare record standards and semantic web technologies for the identification of patient cohorts.

    PubMed

    Fernández-Breis, Jesualdo Tomás; Maldonado, José Alberto; Marcos, Mar; Legaz-García, María del Carmen; Moner, David; Torres-Sospedra, Joaquín; Esteban-Gil, Angel; Martínez-Salvador, Begoña; Robles, Montserrat

    2013-12-01

    The secondary use of electronic healthcare records (EHRs) often requires the identification of patient cohorts. In this context, an important problem is the heterogeneity of clinical data sources, which can be overcome with the combined use of standardized information models, virtual health records, and semantic technologies, since each of them contributes to solving aspects related to the semantic interoperability of EHR data. To develop methods allowing for a direct use of EHR data for the identification of patient cohorts leveraging current EHR standards and semantic web technologies. We propose to take advantage of the best features of working with EHR standards and ontologies. Our proposal is based on our previous results and experience working with both technological infrastructures. Our main principle is to perform each activity at the abstraction level with the most appropriate technology available. This means that part of the processing will be performed using archetypes (ie, data level) and the rest using ontologies (ie, knowledge level). Our approach will start working with EHR data in proprietary format, which will be first normalized and elaborated using EHR standards and then transformed into a semantic representation, which will be exploited by automated reasoning. We have applied our approach to protocols for colorectal cancer screening. The results comprise the archetypes, ontologies, and datasets developed for the standardization and semantic analysis of EHR data. Anonymized real data have been used and the patients have been successfully classified by the risk of developing colorectal cancer. This work provides new insights in how archetypes and ontologies can be effectively combined for EHR-driven phenotyping. The methodological approach can be applied to other problems provided that suitable archetypes, ontologies, and classification rules can be designed.

  3. Fork gratings based on ferroelectric liquid crystals.

    PubMed

    Ma, Y; Wei, B Y; Shi, L Y; Srivastava, A K; Chigrinov, V G; Kwok, H-S; Hu, W; Lu, Y Q

    2016-03-21

    In this article, we disclose a fork grating (FG) based on the photo-aligned ferroelectric liquid crystal (FLC). The Digital Micro-mirror Device based system is used as a dynamic photomask to generated different holograms. Because of controlled anchoring energy, the photo alignment process offers optimal conditions for the multi-domain FLC alignment. Two different electro-optical modes namely DIFF/TRANS and DIFF/OFF switchable modes have been proposed where the diffraction can be switched either to no diffraction or to a completely black state, respectively. The FLC FG shows high diffraction efficiency and fast response time of 50µs that is relatively faster than existing technologies. Thus, the FLC FG may pave a good foundation toward optical vertices generation and manipulation that could find applications in a variety of devices.

  4. Raman and infrared investigation of ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Gnyba, Marcin; Wroczynski, Piotr

    2003-11-01

    Mid-IR absorption and Raman scattering measurements were carried out for ferroelectric ceramics with composition of Ba(Ti1-xZrx)O3. The main aim of presented research was to analyze the ability of these complementary optical methods to estimate the efficiency of manufacturing process as well as to investigate the molecular strcuture of synthesized material. Task is very difficult, because of sophisticated structure of presented materials as well as technology of their manufacturing. Moreover, at the room temperature, the influence of difference in crystal phases as well as existence of remnants of oxides introduces significant changes to the spectrum. Results of presented research suggests that the efficiency of atom substitution can be investigated by means of optical spectroscopy.

  5. Employee problems and their consequences in the technology industry: evidence from surveys and counseling records.

    PubMed

    Wang, Ching-Wen; Lin, Po-Chang; Sha, Chyuan

    2014-06-01

    To support employees' work and health, organizations should help employees cope with common problems. Previous studies have focused primarily on work-related problems across multiple industries rather than on evaluating industry-specific issues. Here, two approaches identified common work and non-work employee problems in the technology industry with the strongest correlations with psychosomatic health and life satisfaction. Study 1 used questionnaires to identify the problems that were perceived as the most frequent by lower-level employees (N = 355) working in the technology industry. Study 2 evaluated employees' coping behaviors by analyzing (with permission) counseling records collected from an employee assistance service company (N = 276). Employees reported a variety of problems; work problems were the only problems (of the top 5 problems) reported in both studies. Several problems emerged in the counseling records (e.g., legal issues, career development, family and marriage problems, and emotional problems) but not in the surveys. Future research should apply these observations to develop scales for measuring employee stressors.

  6. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

    PubMed

    Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V; Mikolajick, Thomas

    2014-12-23

    Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

  7. Performance improvement indicators of the Medical Records Department and Information Technology (IT) in hospitals

    PubMed Central

    Ajami, Sima; Ketabi, Saedeh; Torabiyan, Fatemeh

    2015-01-01

    Medical Record Department (MRD) has a vital role in making short and long term plans to improve health system services. The aim of this study was to describe performance improvement indicators of hospital MRD and information technology (IT). Collection of Data: A search was conducted in various databases, through related keywords in articles, books, and abstracts of conferences from 2001 to 2009. About 58 articles and books were available which were evaluated and finally 15 of them were selected based on their relevance to the study. MRD must be capable of supporting tasks such as patient care and continuity, institute management processes, medical education programs, medical research, communication between different wards of a hospital and administrative and medical staff. The use of IT in MRD can facilitate access to department, expedite communication within and outside department, reduce space with electronic medical records, reduce costs, accelerate activities such as coding by use of coding guide software and facilitate retrieval of records that will ultimately improve the performance of MRD. PMID:26150874

  8. Shared decision-making using personal health record technology: a scoping review at the crossroads.

    PubMed

    Davis, Selena; Roudsari, Abdul; Raworth, Rebecca; Courtney, Karen L; MacKay, Lee

    2017-07-01

    This scoping review aims to determine the size and scope of the published literature on shared decision-making (SDM) using personal health record (PHR) technology and to map the literature in terms of system design and outcomes. Literature from Medline, Google Scholar, Cumulative Index to Nursing and Allied Health Literature, Engineering Village, and Web of Science (2005-2015) using the search terms "personal health records," "shared decision making," "patient-provider communication," "decision aid," and "decision support" was included. Articles ( n  = 38) addressed the efficacy or effectiveness of PHRs for SDM in engaging patients in self-care and decision-making or ways patients can be supported in SDM via PHR. Analysis resulted in an integrated SDM-PHR conceptual framework. An increased interest in SDM via PHR is apparent, with 55% of articles published within last 3 years. Sixty percent of the literature originates from the United States. Twenty-six articles address a particular clinical condition, with 10 focused on diabetes, and one-third offer empirical evidence of patient outcomes. The tethered and standalone PHR architectural types were most studied, while the interconnected PHR type was the focus of more recently published methodological approaches and discussion articles. The study reveals a scarcity of rigorous research on SDM via PHR. Research has focused on one or a few of the SDM elements and not on the intended complete process. Just as PHR technology designed on an interconnected architecture has the potential to facilitate SDM, integrating the SDM process into PHR technology has the potential to drive PHR value.

  9. Wearable Technology Surveillance Data for the Personal Health Record Using the Omaha System: Noise Exposure, Cardiovascular and Stress Biomarkers.

    PubMed

    Kerr, Madeleine J; Chin, Dal Lae; Monsen, Karen A; Hong, OiSaeng

    2016-01-01

    This poster describes a method to prepare noise and health data from wearable technology for standardized representation in the electronic personal health record thus enabling individuals to identify noise-related health risks. Using a case study approach, the authors demonstrate transformation of data to the Omaha System standardized terminology in order to depict the data graphically in a personal health record.

  10. Implementing unique device identification in electronic health record systems: organizational, workflow, and technological challenges.

    PubMed

    Campion, Thomas R; Johnson, Stephen B; Paxton, Elizabeth W; Mushlin, Alvin I; Sedrakyan, Art

    2014-01-01

    The United States Food and Drug Administration (FDA) has proposed creating a unique device identification (UDI) system for medical devices to facilitate postmarket surveillance, quality improvement, and other applications. Although a small number of health care institutions have implemented initiatives comparable with the proposed UDI system by capturing data in electronic health record (EHR) systems, it is unknown whether institutions with fewer resources will be able to similarly implement UDI. This paper calls attention to organizational, workflow, and technological challenges in UDI system implementation by drawing from the literature on EHR and clinical research systems implementation. Organizational challenges for UDI system implementation include coordinating multiple stakeholders to define UDI attributes and characteristics for use in EHRs, guiding organizational change within individual institutions for integrating UDI with EHRs, and guiding organizational change for reusing UDI data captured in EHRs. Workflow challenges include capturing UDI data in EHRs using keyboard entry and barcode scanning. Technological challenges involve interfacing UDI data between EHRs and surgical information systems, transforming UDI and related patient data from EHRs for research, and applying data standards to UDI within and beyond EHRs. We provide recommendations for regulations, organizational sharing, and professional society engagement to raise awareness of and overcome UDI system implementation challenges. Implementation of the UDI system will require integration of people, process, and technology to achieve benefits envisioned by FDA, including improved postmarket device surveillance and quality of care.

  11. Biological, mechanical, and technological considerations affecting the longevity of intracortical electrode recordings.

    PubMed

    Harris, James P; Tyler, Dustin J

    2013-01-01

    Intracortical electrodes are important tools, with applications ranging from fundamental laboratory studies to potential solutions to intractable clinical applications. However, the longevity and reliability of the interfaces remain their major limitation to the wider implementation and adoption of this technology, especially in broader translational work. Accordingly, this review summarizes the most significant biological and technical factors influencing the long-term performance of intracortical electrodes. In a laboratory setting, intracortical electrodes have been used to study the normal and abnormal function of the brain. This improved understanding has led to valuable insights regarding many neurological conditions. Likewise, clinical applications of intracortical brain-machine interfaces offer the ability to improve the quality of life of many patients afflicted with high-level paralysis from spinal cord injury, brain stem stroke, amyotrophic lateral sclerosis, or other conditions. It is widely hypothesized that the tissue response to the electrodes, including inflammation, limits their longevity. Many studies have examined and modified the tissue response to intracortical electrodes to improve future intracortical electrode technologies. Overall, the relationship between biological, mechanical, and technological considerations are crucial for the fidelity of chronic electrode recordings and represent a presently active area of investigation in the field of neural engineering.

  12. Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Stolichnov, I.; Riester, S. W. E.; Trodahl, H. J.; Setter, N.; Rushforth, A. W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, T.

    2008-06-01

    Multiferroic structures that provide coupled ferroelectric and ferromagnetic responses are of significant interest as they may be used in novel memory devices and spintronic logic elements. One approach towards this goal is the use of composites that couple ferromagnetic and ferroelectric layers through magnetostrictive and piezoelectric strain transmitted across the interfaces. However, mechanical clamping of the films to the substrate limits their response. Structures where the magnetic response is modulated directly by the electric field of the poled ferroelectric would eliminate this constraint and provide a qualitatively higher level of integration, combining the emerging field of multiferroics with conventional semiconductor microelectronics. Here, we report the realization of such a device using (Ga,Mn)As, which is an archetypical diluted magnetic semiconductor with well-understood carrier-mediated ferromagnetism, and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature of the ferromagnetic semiconductor. The non-volatile gating of (Ga,Mn)As has been made possible by applying a low-temperature copolymer deposition technique that is distinct from pre-existing technologies for ferroelectric gates on magnetic oxides. This accomplishment opens a way to nanometre-scale modulation of magnetic semiconductor properties with rewritable ferroelectric domain patterns, operating at modest voltages and subnanosecond times.

  13. FeTRAM. An organic ferroelectric material based novel random access memory cell.

    PubMed

    Das, Saptarshi; Appenzeller, Joerg

    2011-09-14

    Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

  14. Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2007-01-01

    Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  15. Nanodynamics of ferroelectric ultrathin films.

    PubMed

    Zhang, Qingteng; Herchig, R; Ponomareva, I

    2011-10-21

    The nanodynamics of ferroelectric ultrathin films made of PbTi(0.6)Zr(0.4)TiO(3) alloy is explored via the use of a first-principles-based technique. Our atomistic simulations predict that the nanostripe domains which constitute the ground state of ferroelectric ultrathin films under most electric boundary conditions oscillate under a driving ac field. Furthermore, we find that the atomically thin wall, or nanowall, that separates the nanodomains with different polarization directions behaves as an elastic object and has a mass associated with it. The nanowall mass is size-dependent and gives rise to a unique size-driven transition from resonance to relaxational dynamics in ultrathin films. A general theory of nanodynamics in such films is developed and used to explain all computational findings. In addition, we find an unusual dynamical coupling between nanodomains and mechanical deformations that could potentially be used in ultrasensitive electromechanical nanosensors.

  16. Ferroelectric Stirling-Cycle Refrigerator

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    A Stirling-cycle refrigerator has a three-pump configuration and pumping sequence, in which one pump serves as a compressor. one pump serves as an expander, and one pump serves as a displacer. The pumps are ferroelectrically actuated diaphragm pumps which are coordinated by synchronizing the ferroelectric-actuator voltages in such a way that the net effect of the displacer is to reduce the deleterious effect of dead space; that is, to circulate a greater fraction of the working fluid through the heat exchangers than would be possible by use of the compressor and expander alone. In addition. the displacer can be controlled separately to make the flow of working fluid in the heat exchangers turbulent (to increase the rate of transfer of heat at the cost of greater resistance to flow) or laminar (to decrease the resistance to flow at the cost of a lower heat-transfer rate).

  17. Percolation Magnetism in Ferroelectric Nanoparticles.

    PubMed

    Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

    2017-12-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe(3+) ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  18. Percolation Magnetism in Ferroelectric Nanoparticles

    NASA Astrophysics Data System (ADS)

    Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

    2017-06-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  19. Fracture behavior of ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Lupascu, Doru C.; Lynch, Christopher S.

    1999-06-01

    Piezoelectric actuators are key components in many smart structures applications. Long term reliability of these actuators becomes increasingly important as research makes the transition to commercial applications. Fracture toughness is a material parameter that measures a material's resistance to crack propagation. This is perhaps, one of the most important parameters for reliable device design. This paper reviews recent work by the authors on fracture behavior of ferroelectric ceramics. Vickers indentation data were used to determine the fracture toughness of a coarse and a fine grained PZT and two compositions of PLZT. R-curve data were obtained for two compositions of PLZT. The R-curve data presented here were generated using four point bend specimens with controlled surface flaws. The R-curve results compare favorably with the Vickers indentation data. A comparison of the R-curves for a ferroelectric composition of PLZT and a quadratic electrostrictive composition of PLZT demonstrate the contribution of domain reorientation to the toughening process.

  20. About the deformation of ferroelectric hystereses

    SciTech Connect

    Schenk, T. Yurchuk, E.; Mueller, S.; Schroeder, U.; Starschich, S.; Böttger, U.; Mikolajick, T.

    2014-12-15

    Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

  1. About the deformation of ferroelectric hystereses

    NASA Astrophysics Data System (ADS)

    Schenk, T.; Yurchuk, E.; Mueller, S.; Schroeder, U.; Starschich, S.; Böttger, U.; Mikolajick, T.

    2014-12-01

    Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

  2. Domain Processes in Ferroelectric Ceramics

    DTIC Science & Technology

    1994-04-14

    WALLS Electron holography utilizing the wave characteristics of electrons. Through a sharp emission tip, the emitted electron beam is largely coherent, or...mirostructural modulation at 25% doping. The strongly first order ferroelectric phase transition in PbTiO3 is also gradually changed to a nearly second...a new domain configuraton. 13 The end-member of the PZT solid solution, PbTiO3 , has the highest transition temperature (Tc = 490 °C) and the largest

  3. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    NASA Technical Reports Server (NTRS)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  4. LTCC Phase Shifters Based on Tunable Ferroelectric Composite Thick Films

    NASA Astrophysics Data System (ADS)

    Nikfalazar, M.; Kohler, C.; Heunisch, A.; Wiens, A.; Zheng, Y.; Schulz, B.; Mikolajek, M.; Sohrabi, M.; Rabe, T.; Binder, J. R.; Jakoby, R.

    2015-11-01

    This paper presents, the investigation of tunable components based on LTCC technology, implementing ferroelectric tunable thick-film dielectric. The tunable loaded line phase shifters are fabricated with metal-insulator-metal (MIM) varactors to demonstrate the capabilities of this method for packaging of the tunable components. The MIM varactors consist of one tunable dielectric paste layer that is printed between two silver layers. The tunable ferroelectric paste is optimized for LTCC sintering temperature around 850°C. The phase shifters are fabricated in two different process. They were achieved a figure of merit of 24°/dB (phase shift 192°) at 3 GHz and 18°/dB (phase shift 98°) at 4.4 GHz by using seven unit cells that each unit cell consisting of two MIM varactors.

  5. Ferroelectrically driven spatial carrier density modulation in graphene.

    PubMed

    Baeumer, Christoph; Saldana-Greco, Diomedes; Martirez, John Mark P; Rappe, Andrew M; Shim, Moonsub; Martin, Lane W

    2015-01-22

    The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

  6. Electrocaloric effect in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pirc, R.; Kutnjak, Z.; Blinc, R.; Zhang, Q. M.

    2011-10-01

    A theoretical model for the electrocaloric effect (ECE) in relaxor ferroelectrics is presented. By solving a self-consistent relation for the ECE temperature change ΔT and minimizing numerically the mean field free energy for relaxors, the field and temperature dependence of ΔT is calculated. The corresponding harmonic Landau coefficient a =a(T), which differs from the ferroelectric case by always being positive, is derived from the spherical random bond-random field model, and the fourth-order coefficient b is treated as a phenomenological parameter, which can be either positive or negative. For b <0, a line of field-induced first-order relaxor-to-ferroelectric phase transitions exists in relaxors, which terminates at a liquid-vapor type critical point ECP,TCP. The critical behavior close to ECP,TCP is analyzed. It is shown that near the first-order phase transition a temperature or field interval or gap formally appears, where ΔT cannot be found. However, domain formation in the coexistence range should restore the continuous behavior of the ECE observed in real systems. Finally, it is shown that the ECE responsivity R1=ΔT /E reaches a maximum near the critical point, in agreement with recent experiments.

  7. MEDICAL RECORD TECHNOLOGY, A COURSE OF STUDY DESIGNED FOR COOPERATIVE PART-TIME STUDENTS EMPLOYED IN MEDICAL RECORD LIBRARIES.

    ERIC Educational Resources Information Center

    KARNES, JAMES B.

    DESIGNED FOR USE BY ELEVENTH GRADE COOPERATIVE PART-TIME STUDENTS EMPLOYED IN MEDICAL RECORD LIBRARIES, THIS GUIDE MAY ALSO BE USED IN AREA VOCATIONAL OR POST-HIGH SCHOOL SETTINGS. IT WAS DEVELOPED BY A CONSULTANT COMMITTEE, TEACHER EDUCATORS, AND RESEARCH ASSISTANTS AT THE STATE LEVEL AND REVISED AFTER USE IN THE FIELD. THE CONTENT OBJECTIVES ARE…

  8. Kinetics of Ferroelectric Phase Transition: Nonlinear Pyroelectric Effect and Ferroelectric Solar Cell

    NASA Astrophysics Data System (ADS)

    Itskovsky, M.

    1999-08-01

    Kinetics of a ferroelectric phase transition in thin ferroelectric layer (film), coated with metallic films [metal-ferroelectric-metal (MFM) system] and overheated with various heating rates through phase transition temperature by solar or laser irradiation impulse, is investigated. Dynamical nonlinear pyroelectric effect (pyroelectric current and polarization) as well as anomalies of dielectric permittivity and specific heat are calculated as functions of changing in time temperature for various heating rates. Conversion efficiency during heating of the MFM system (served as ferroelectric solar cell), operating due to the nonlinear pyroelectric effect in the ferroelectric phase transition region, ranges from a few percent for ferroelectrics of the triglycine sulphate (TGS) type to above 10% for the NaNO2 type ferroelectrics, reaching the order of efficiency of photovoltaic solar cell.

  9. Quantum breathers in lithium tantalate ferroelectrics

    NASA Astrophysics Data System (ADS)

    Biswas, Arindam; Adhikar, Sutapa; Choudhary, Kamal; Basu, Reshmi; Bandyopadhyay, A. K.; Bhattacharjee, A. K.; Mandal, D.

    2013-08-01

    Lithium tantalate is technologically one of the most important ferroelectric materials with a low poling field that has several applications in the field of photonics and memory switching devices. In a Hamiltonian system, such as dipolar system, the polarization behavior of such ferroelectrics can be well-modeled by Klein-Gordon (K-G) equation. Due to strong localization coupled with discreteness in a nonlinear K-G lattice, there is a formation of breathers and multi-breathers that manifest in the localization peaks across the domains in polarization-space-time plot. Due to the presence of nonlinearity and also impurities (as antisite tantalum defects) in the structure, dissipative effects are observed and hence dissipative breathers are studied here. To probe the quantum states related to discrete breathers, the same K-G lattice is quantized to give rise to quantum breathers (QBs) that are explained by a periodic boundary condition. The gap between the localized and delocalized phonon-band is a function of impurity content that is again related to the effect of pinning of domains due to antisite tantalum defects in the system, i.e., a point of easier switching within the limited amount of data on poling field, which is related to Landau coefficient (read, nonlinearity). Secondly, in a non-periodic boundary condition, the temporal evolution of quanta shows interesting behavior in terms of `critical' time of redistribution of quanta that is proportional to QB's lifetime in femtosecond having a possibility for THz applications. Hence, the importance of both the methods for characterizing quantum breathers is shown in these perspectives.

  10. Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit

    PubMed Central

    Vlasin, Ondrej; Casals, Blai; Dix, Nico; Gutiérrez, Diego; Sánchez, Florencio; Herranz, Gervasi

    2015-01-01

    We have imaged optically the spatial distributions of ferroelectricity and piezoelectricity at the diffraction limit. Contributions to the birefringence from electro-optics –linked to ferroelectricity– as well as strain –arising from converse piezoelectric effects– have been recorded simultaneously in a BaTiO3 thin film. The concurrent recording of electro-optic and piezo-optic mappings revealed that, far from the ideal uniformity, the ferroelectric and piezoelectric responses were strikingly inhomogeneous, exhibiting significant fluctuations over the scale of the micrometer. The optical methods here described are appropriate to study the variations of these properties simultaneously, which are of great relevance when ferroelectrics are downscaled to small sizes for applications in data storage and processing. PMID:26522345

  11. Using Semantic Web Technologies for Cohort Identification from Electronic Health Records for Clinical Research

    PubMed Central

    Pathak, Jyotishman; Kiefer, Richard C.; Chute, Christopher G.

    2012-01-01

    The ability to conduct genome-wide association studies (GWAS) has enabled new exploration of how genetic variations contribute to health and disease etiology. One of the key requirements to perform GWAS is the identification of subject cohorts with accurate classification of disease phenotypes. In this work, we study how emerging Semantic Web technologies can be applied in conjunction with clinical data stored in electronic health records (EHRs) to accurately identify subjects with specific diseases for inclusion in cohort studies. In particular, we demonstrate the role of using Resource Description Framework (RDF) for representing EHR data and enabling federated querying and inferencing via standardized Web protocols for identifying subjects with Diabetes Mellitus. Our study highlights the potential of using Web-scale data federation approaches to execute complex queries. PMID:22779040

  12. The "epic" challenge of optimizing antimicrobial stewardship: the role of electronic medical records and technology.

    PubMed

    Kullar, Ravina; Goff, Debra A; Schulz, Lucas T; Fox, Barry C; Rose, Warren E

    2013-10-01

    Antimicrobial stewardship programs (ASPs) are established means for institutions to improve patient outcomes while reducing the emergence of resistant bacteria. With the increased adoption and evolution of electronic medical records (EMRs), there is a need to assimilate the tools of ASPs into EMRs, using decision support and feedback. Third-party software vendors provide the mainstay for integration of individual institutional EMR and ASP efforts. Epic is the leading implementer of EMR technology in the United States. A collaboration of physicians and pharmacists are working closely with Epic to provide a more comprehensive platform of ASP tools that may be institutionally individualized. We review the historical relationship between ASPs and the EMR, cite examples of Epic stewardship tools from 3 academic medical centers' ASPs, discuss limitations of these Epic tools, and conclude with the current process in evolution to integrate ASP tools and decision support capacities directly into Epic's EMR.

  13. Novel Acoustic Technology for Studying Free-Ranging Shark Social Behaviour by Recording Individuals' Interactions

    PubMed Central

    Guttridge, Tristan L.; Gruber, Samuel H.; Krause, Jens; Sims, David W.

    2010-01-01

    Group behaviours are widespread among fish but comparatively little is known about the interactions between free-ranging individuals and how these might change across different spatio-temporal scales. This is largely due to the difficulty of observing wild fish groups directly underwater over long enough time periods to quantify group structure and individual associations. Here we describe the use of a novel technology, an animal-borne acoustic proximity receiver that records close-spatial associations between free-ranging fish by detection of acoustic signals emitted from transmitters on other individuals. Validation trials, held within enclosures in the natural environment, on juvenile lemon sharks Negaprion brevirostris fitted with external receivers and transmitters, showed receivers logged interactions between individuals regularly when sharks were within 4 m (∼4 body lengths) of each other, but rarely when at 10 m distance. A field trial lasting 17 days with 5 juvenile lemon sharks implanted with proximity receivers showed one receiver successfully recorded association data, demonstrating this shark associated with 9 other juvenile lemon sharks on 128 occasions. This study describes the use of acoustic underwater proximity receivers to quantify interactions among wild sharks, setting the scene for new advances in understanding the social behaviours of marine animals. PMID:20174465

  14. Underwater reflectance transformation imaging: a technology for in situ underwater cultural heritage object-level recording

    NASA Astrophysics Data System (ADS)

    Selmo, David; Sturt, Fraser; Miles, James; Basford, Philip; Malzbender, Tom; Martinez, Kirk; Thompson, Charlie; Earl, Graeme; Bevan, George

    2017-01-01

    There is an increasing demand for high-resolution recording of in situ underwater cultural heritage. Reflectance transformation imaging (RTI) has a proven track record in terrestrial contexts for acquiring high-resolution diagnostic data at small scales. The research presented here documents the first adaptation of RTI protocols to the subaquatic environment, with a scuba-deployable method designed around affordable off-the-shelf technologies. Underwater RTI (URTI) was used to capture detail from historic shipwrecks in both the Solent and the western Mediterranean. Results show that URTI can capture submillimeter levels of qualitative diagnostic detail from in situ archaeological material. In addition, this paper presents the results of experiments to explore the impact of turbidity on URTI. For this purpose, a prototype fixed-lighting semisubmersible RTI photography dome was constructed to allow collection of data under controlled conditions. The signal-to-noise data generated reveals that the RGB channels of underwater digital images captured in progressive turbidity degraded faster than URTI object geometry calculated from them. URTI is shown to be capable of providing analytically useful object-level detail in conditions that would render ordinary underwater photography of limited use.

  15. Does Wearable Medical Technology With Video Recording Capability Add Value to On-Call Surgical Evaluations?

    PubMed

    Gupta, Sameer; Boehme, Jacqueline; Manser, Kelly; Dewar, Jannine; Miller, Amie; Siddiqui, Gina; Schwaitzberg, Steven D

    2016-10-01

    Background Google Glass has been used in a variety of medical settings with promising results. We explored the use and potential value of an asynchronous, near-real time protocol-which avoids transmission issues associated with real-time applications-for recording, uploading, and viewing of high-definition (HD) visual media in the emergency department (ED) to facilitate remote surgical consults. Study Design First-responder physician assistants captured pertinent aspects of the physical examination and diagnostic imaging using Google Glass' HD video or high-resolution photographs. This visual media were then securely uploaded to the study website. The surgical consultation then proceeded over the phone in the usual fashion and a clinical decision was made. The surgeon then accessed the study website to review the uploaded video. This was followed by a questionnaire regarding how the additional data impacted the consultation. Results The management plan changed in 24% (11) of cases after surgeons viewed the video. Five of these plans involved decision making regarding operative intervention. Although surgeons were generally confident in their initial management plan, confidence scores increased further in 44% (20) of cases. In addition, we surveyed 276 ED patients on their opinions regarding concerning the practice of health care providers wearing and using recording devices in the ED. The survey results revealed that the majority of patients are amenable to the addition of wearable technology with video functionality to their care. Conclusions This study demonstrates the potential value of a medically dedicated, hands-free, HD recording device with internet connectivity in facilitating remote surgical consultation. © The Author(s) 2016.

  16. Digital magnetic recording systems utilizing magnetoresistive (MR) playback technology: Theoretical studies

    NASA Astrophysics Data System (ADS)

    Champion, Eric Justin

    1997-11-01

    The use of magnetoresistive playback technology in high density magnetic recording systems poses special challenges for the hard drive designer. The MR sensor is an intrinsically nonlinear device which must be biased into a region of linear response with respect to the external field. Additional magnetic structures are required to stabilize the sensor against domain formation. These structures result in complicated magnetization processes during the playback of recorded information. The spatial variation of the MR head replay voltage is complicated and has asymmetries due to the magnetic structure of the device. These issues require sophisticated modeling to properly characterize the system performance. This dissertation presents studies of several key problems involved with integrating MR heads into hard disk drives. Models of varying levels of sophistication have been developed for this work. These range from simple linear reciprocity analyses to large scale numerical energy minimization techniques. The spatial variation of the MR playback voltage is studied as a function of the system geometry using a linear theory. The response is found to depend strongly on both the head and medium parameters. Instabilities are investigated using a large scale numerical model for a particular head fabrication geometry. The interface between the stabilizing magnetic structures and the head material produces repeatable hysteretic effects in the voltage response. The saturation of MR heads is characterized using numerical modeling. This is important for estimates of the error rate in the drive. The results show that the saturation characteristics can vary significantly between different head designs and as a function of the spatial position of the device. The issues involved with the use of MR heads as positioning sensors are also addressed. The servo system stability is a strong function of the recording parameters and the head spatial symmetry. Optimization of the servo system

  17. Expanding Role of Certified Electronic Health Records Technology in Radiology: The MACRA Mandate.

    PubMed

    Nicola, Gregory N; Rosenkrantz, Andrew B; Hirsch, Joshua A; Silva, Ezequiel; Dreyer, Keith J; Recht, Michael P

    2017-04-19

    Radiology has historically been at the forefront of innovation and the advancement of technology for the benefit of patient care. However, challenges to early implementation prevented most radiologists from adopting and integrating certified electronic health record technology (CEHRT) into their daily workflow despite the early and potential advantages it offered. This circumstance places radiology at a disadvantage in the two payment pathways of the Medicare Access and CHIP Reauthorization Act of 2015: the Merit-Based Incentive Payment System (MIPS) and advanced alternative payment models (APMs). Specifically, not integrating CEHRT hampers radiology's ability to receive bonus points in the quality performance category of the MIPS and in parallel threatens certain threshold requirements for advanced APMs under the new Quality Payment Program. Radiology must expand the availability and use of CEHRT to satisfy existing performance measures while creating new performance measures that create value for the health care system. In addition, radiology IT vendors will need to ensure their products (eg, radiology information systems, PACS, and radiology reporting systems) are CEHRT compliant and approved. Such collective efforts will increase radiologists' quality of patient care, contribution to value driven activities, and overall health care relevance. Copyright © 2017 American College of Radiology. Published by Elsevier Inc. All rights reserved.

  18. Applying semantic web technologies for phenome-wide scan using an electronic health record linked Biobank

    PubMed Central

    2012-01-01

    Background The ability to conduct genome-wide association studies (GWAS) has enabled new exploration of how genetic variations contribute to health and disease etiology. However, historically GWAS have been limited by inadequate sample size due to associated costs for genotyping and phenotyping of study subjects. This has prompted several academic medical centers to form “biobanks” where biospecimens linked to personal health information, typically in electronic health records (EHRs), are collected and stored on a large number of subjects. This provides tremendous opportunities to discover novel genotype-phenotype associations and foster hypotheses generation. Results In this work, we study how emerging Semantic Web technologies can be applied in conjunction with clinical and genotype data stored at the Mayo Clinic Biobank to mine the phenotype data for genetic associations. In particular, we demonstrate the role of using Resource Description Framework (RDF) for representing EHR diagnoses and procedure data, and enable federated querying via standardized Web protocols to identify subjects genotyped for Type 2 Diabetes and Hypothyroidism to discover gene-disease associations. Our study highlights the potential of Web-scale data federation techniques to execute complex queries. Conclusions This study demonstrates how Semantic Web technologies can be applied in conjunction with clinical data stored in EHRs to accurately identify subjects with specific diseases and phenotypes, and identify genotype-phenotype associations. PMID:23244446

  19. Using Technology to Improve Cancer Care: Social Media, Wearables, and Electronic Health Records.

    PubMed

    Fisch, Michael J; Chung, Arlene E; Accordino, Melissa K

    2016-01-01

    Digital engagement has become pervasive in the delivery of cancer care. Internet- and cellular phone-based tools and systems are allowing large groups of people to engage with each other and share information. Health systems and individual health professionals are adapting to this revolution in consumer and patient behavior by developing ways to incorporate the benefits of technology for the purpose of improving the quality of medical care. One example is the use of social media platforms by oncologists to foster interaction with each other and to participate with the lay public in dialogue about science, medicine, and cancer care. In addition, consumer devices and sensors (wearables) have provided a new, growing dimension of digital engagement and another layer of patient-generated health data to foster better care and research. Finally, electronic health records have become the new standard for oncology care delivery, bringing new opportunities to measure quality in real time and follow practice patterns, as well as new challenges as providers and patients seek ways to integrate this technology along with other forms of digital engagement to produce more satisfaction in the process of care along with measurably better outcomes.

  20. Safe use of electronic health records and health information technology systems: trust but verify.

    PubMed

    Denham, Charles R; Classen, David C; Swenson, Stephen J; Henderson, Michael J; Zeltner, Thomas; Bates, David W

    2013-12-01

    We will provide a context to health information technology systems (HIT) safety hazards discussions, describe how electronic health record-computer prescriber order entry (EHR-CPOE) simulation has already identified unrecognized hazards in HIT on a national scale, helping make EHR-CPOE systems safer, and we make the case for all stakeholders to leverage proven methods and teams in HIT performance verification. A national poll of safety, quality improvement, and health-care administrative leaders identified health information technology safety as the hazard of greatest concern for 2013. Quality, HIT, and safety leaders are very concerned about technology performance risks as addressed in the Health Information Technology and Patient Safety report of the Institute of Medicine; and these are being addressed by the Office of the National Coordinator of HIT of the U.S. Dept. of Human Services in their proposed plans. We describe the evolution of postdeployment testing of HIT performance, including the results of national deployment of Texas Medical Institute of Technology's electronic health record computer prescriber order entry (TMIT EHR-CPOE) Flight Simulator verification test that is addressed in these 2 reports, and the safety hazards of concern to leaders. A global webinar for health-care leaders addressed the top patient safety hazards in the areas of leadership, practices, and technologies. A poll of 76 of the 221 organizations participating in the webinar revealed that HIT hazards were the participants' greatest concern of all 30 hazards presented. Of those polled, 89% rated HIT patient/data mismatches in EHRs and HIT systems as a 9 or 10 on a scale of 1 to 10 as a hazard of great concern. Review of a key study of postdeployment testing of the safety performance of operational EHR systems with CPOE implemented in 62 hospitals, using the TMIT EHR-CPOE simulation tool, showed that only 53% of the medication orders that could have resulted in fatalities were

  1. Predictive modelling of ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Velev, Julian P.; Burton, John D.; Zhuravlev, Mikhail Ye; Tsymbal, Evgeny Y.

    2016-05-01

    Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.

  2. A concept of ferroelectric microparticle propulsion thruster

    SciTech Connect

    Yarmolich, D.; Vekselman, V.; Krasik, Ya. E.

    2008-02-25

    A space propulsion concept using charged ferroelectric microparticles as a propellant is suggested. The measured ferroelectric plasma source thrust, produced mainly by microparticles emission, reaches {approx}9x10{sup -4} N. The obtained trajectories of microparticles demonstrate that the majority of the microparticles are positively charged, which permits further improvement of the thruster.

  3. Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Ahmad, M. M.; Kotru, P. N.

    2016-04-01

    Gel-grown single crystals of [Pr2(C3H2O4)3(H2O)6] exhibit remarkably flat habit faces, the most predominant being {110}. High-resolution x-ray diffraction analysis showed that the crystals are free from structural grain boundaries, which is the key requirement for single crystals for use in the microelectronics industry to serve as low-dielectric-constant ferroelectric material. The dielectric behavior recorded on {110} planes of single crystals shows that the crystal is ferroelectric with transition temperature T c = 135°C, which differs from the Curie-Weiss temperature T 0 by 2°C (T 0 < T c). Material in pellet form is shown to exhibit slightly different dielectric behavior. Polarization versus electric field confirms the ferroelectric behavior of the material. The dielectric behavior is also supported by the results of thermal studies, viz. thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The magnetic susceptibility and magnetic moment are calculated to be 30.045 × 10-6 emu and 3.092 BM, respectively.

  4. Towards the limit of ferroelectric nanosized grains

    NASA Astrophysics Data System (ADS)

    Roelofs, A.; Schneller, T.; Szot, K.; Waser, R.

    2003-02-01

    Ferroelectric random access memories are non-volatile, low voltage, high read/write speed devices which have been introduced into the market in recent years and which show the clear potential of future gigabit scale universal non-volatile memories. The ultimate limit of this concept will depend on the ferroelectric limit (synonymous superparaelectric limit), i.e. the size limit below which the ferroelectricity is quenched. While there are clear indications that 2D ferroelectric oxide films may sustain their ferroelectric polarization below 4 nm in thickness (Tybell T, Ahn C H and Triscone J M 1999 Appl. Phys. Lett. 75 856), the limit will be quite different for isolated 3D nanostructures (nanograins, nanoclusters). To investigate scaling effects of ferroelectric nanograins on Si wafers, we studied PbTiO3 (PTO) and Pb(ZrxTi1-x)O3 grown by a self-assembly chemical solution deposition method. Preparing highly diluted precursor solutions we achieved single separated ferroelectric grains with grain sizes ranging from 200 nm down to less than 20 nm. For grains smaller than 20 nm, no piezoresponse was observed and we suppose this could be due to the transition from the ferroelectric to the paraelectric phase which has no spontaneous polarization. Recent calculations (Zhong W L, Wang Y G, Zhang P L and Qu B D 1994 Phys. Rev. B 50 698) and experiments (Jiang B, Peng J L, Zhong W L and Bursill L A 2000 J. Appl. Phys. 87 3462) showed that the ferroelectricity of fine ferroelectric particles decrease with decreasing particle size. From these experiments the extrapolated critical size of PTO particles was found to be around 4.2-20 nm.

  5. Anomalously rotary polarization discovered in homochiral organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Li, Peng-Fei; Tang, Yuan-Yuan; Wang, Zhong-Xia; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-11-01

    Molecular ferroelectrics are currently an active research topic in the field of ferroelectric materials. As complements or alternatives of conventional inorganic ferroelectrics, they have been designed to realize various novel properties, ranging from multiferroicity and semiconductive ferroelectricity to ferroelectric photovoltaics and ferroelectric luminescence. The stabilizing of ferroelectricity in various systems is owing to the flexible tailorability of the organic components. Here we describe the construction of optically active molecular ferroelectrics by introducing homochiral molecules as polar groups. We find that the ferroelectricity in (R)-(-)-3-hydroxlyquinuclidinium halides is due to the alignment of the homochiral molecules. We observe that both the specific optical rotation and rotatory direction change upon paraelectric-ferroelectric phase transitions, due to the existence of two origins from the molecular chirality and spatial arrangement, whose contributions vary upon the transitions. The optical rotation switching effect may find applications in electro-optical elements.

  6. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    PubMed Central

    Ghittorelli, Matteo; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovács-Vajna, Zsolt M.; de Leeuw, Dago M.; Torricelli, Fabrizio

    2017-01-01

    Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm−2. PMID:28604664

  7. Novel Ferroelectric CMOS Circuits as a Nonvolatile Logic

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Horiuchi, T.; Li, Q.-H.; Wang, S.; Yun, K. Y.; Sakai, S.

    2008-03-01

    We propose a novel and promising nonvolatile-logic circuit constructed by p channel type (Pch) and n channel type (Nch) ferroelectric gate field effect transistors (FeFETs), which we named a ferroelectric CMOS (FeCMOS) circuit. The circuit works as both logic and memory. We fabricated a NOT logic FeCMOS device which have Pt metal gates and gate oxides of ferroelectric SrBi2Ta2O9 (SBT) and high-k HfAlO on Si. Key technology was adjusting threshold voltages of the FeFETs as well as preparing those of high quality. We demonstrate basic operations of the NOT-logic response, memory writing, holding and non-destructive reading. The memory writing is done by amplifying the input node voltage to a higher level when the node was logically high and to a lower one when it was logically low just before the writing operation. The data retention was also measured. The retained high and low voltages were almost unchanged for 1.2 days. The idea of this FeCMOS will enhance flexibility of circuit designing by merging logic and memory functions. This work was partially supported by NEDO.

  8. Crack instability of ferroelectric solids under alternative electric loading

    NASA Astrophysics Data System (ADS)

    Chen, Hao-Sen; Wang, He-Ling; Pei, Yong-Mao; Wei, Yu-Jie; Liu, Bin; Fang, Dai-Ning

    2015-08-01

    The low fracture toughness of the widely used piezoelectric and ferroelectric materials in technological applications raises a big concern about their durability and safety. Up to now, the mechanisms of electric-field induced fatigue crack growth in those materials are not fully understood. Here we report experimental observations that alternative electric loading at high frequency or large amplitude gives rise to dramatic temperature rise at the crack tip of a ferroelectric solid. The temperature rise subsequently lowers the energy barrier of materials for domain switch in the vicinity of the crack tip, increases the stress intensity factor and leads to unstable crack propagation finally. In contrast, at low frequency or small amplitude, crack tip temperature increases mildly and saturates quickly, no crack growth is observed. Together with our theoretical analysis on the non-linear heat transfer at the crack tip, we constructed a safe operating area curve with respect to the frequency and amplitude of the electric field, and validated the safety map by experiments. The revealed mechanisms about how electro-thermal-mechanical coupling influences fracture can be directly used to guide the design and safety assessment of piezoelectric and ferroelectric devices.

  9. Thin layer composite unimorph ferroelectric driver and sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    2004-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  10. Evaluation of a new semiautomated external defibrillator technology: a live cases video recording study.

    PubMed

    Maes, Frédéric; Marchandise, Sébastien; Boileau, Laurianne; Le Polain de Waroux, Jean-Benoît; Scavée, Christophe

    2015-06-01

    To determine the effect of a new automated external defibrillator (AED) system connected by General Packet Radio Service (GPRS) to an external call centre in assisting novices in a sudden cardiac arrest situation. Prospective, interventional study. Layperson volunteers were first asked to complete a survey about their knowledge and ability to give cardiopulmonary resuscitation (CPR) and use an AED. A simulated cardiac arrest scenario using a CPR manikin was then presented to volunteers. A telephone and semi-AED were available in the same room. The AED was linked to a call centre, which provided real-time information to 'bystanders' and emergency services via GPRS/GPS technology. The scene was videotaped to avoid any interaction with examiners. A standardised check list was used to record correct actions. 85 volunteers completed questionnaires and were recorded. Mean age was 44±16, and 49% were male; 38 (45%) had prior CPR training or felt comfortable intervening in a sudden cardiac arrest victim; 40% felt they could deliver a shock using an AED. During the scenarios, 56 (66%) of the participants used the AED and 53 (62%) successfully delivered an electrical shock. Mean time to defibrillation was 2 min 29 s. Only 24 (28%) participants dialled the correct emergency response number (112); the live-assisted GPRS AED allowed alerted emergency services in 38 other cases. CPR was initiated in 63 (74%) cases, 26 (31%) times without prompting and 37 (44%) times after prompting by the AED. Although knowledge of the general population appears to be inadequate with regard to AED locations and recognition, live-assisted devices with GPS-location may improve emergency care. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

  11. Calligraphic Poling of Ferroelectric Material

    NASA Technical Reports Server (NTRS)

    Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

    2007-01-01

    Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

  12. High photovoltages in ferroelectric ceramics

    NASA Technical Reports Server (NTRS)

    Brody, P. S.

    1976-01-01

    The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

  13. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  14. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  15. Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Paik, Young Hun

    As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of

  16. A technology prototype system for rating therapist empathy from audio recordings in addiction counseling

    PubMed Central

    Xiao, Bo; Huang, Chewei; Imel, Zac E.; Atkins, David C.; Georgiou, Panayiotis; Narayanan, Shrikanth S.

    2016-01-01

    Scaling up psychotherapy services such as for addiction counseling is a critical societal need. One challenge is ensuring quality of therapy, due to the heavy cost of manual observational assessment. This work proposes a speech technology-based system to automate the assessment of therapist empathy—a key therapy quality index—from audio recordings of the psychotherapy interactions. We designed a speech processing system that includes voice activity detection and diarization modules, and an automatic speech recognizer plus a speaker role matching module to extract the therapist's language cues. We employed Maximum Entropy models, Maximum Likelihood language models, and a Lattice Rescoring method to characterize high vs. low empathic language. We estimated therapy-session level empathy codes using utterance level evidence obtained from these models. Our experiments showed that the fully automated system achieved a correlation of 0.643 between expert annotated empathy codes and machine-derived estimations, and an accuracy of 81% in classifying high vs. low empathy, in comparison to a 0.721 correlation and 86% accuracy in the oracle setting using manual transcripts. The results show that the system provides useful information that can contribute to automatic quality insurance and therapist training. PMID:28286867

  17. Automation of Presentation Record Production Based on Rich-Media Technology Using SNT Petri Nets Theory

    PubMed Central

    Martiník, Ivo

    2015-01-01

    Rich-media describes a broad range of digital interactive media that is increasingly used in the Internet and also in the support of education. Last year, a special pilot audiovisual lecture room was built as a part of the MERLINGO (MEdia-rich Repository of LearnING Objects) project solution. It contains all the elements of the modern lecture room determined for the implementation of presentation recordings based on the rich-media technologies and their publication online or on-demand featuring the access of all its elements in the automated mode including automatic editing. Property-preserving Petri net process algebras (PPPA) were designed for the specification and verification of the Petri net processes. PPPA does not need to verify the composition of the Petri net processes because all their algebraic operators preserve the specified set of the properties. These original PPPA are significantly generalized for the newly introduced class of the SNT Petri process and agent nets in this paper. The PLACE-SUBST and ASYNC-PROC algebraic operators are defined for this class of Petri nets and their chosen properties are proved. The SNT Petri process and agent nets theory were significantly applied at the design, verification, and implementation of the programming system ensuring the pilot audiovisual lecture room functionality. PMID:26258164

  18. A technology prototype system for rating therapist empathy from audio recordings in addiction counseling.

    PubMed

    Xiao, Bo; Huang, Chewei; Imel, Zac E; Atkins, David C; Georgiou, Panayiotis; Narayanan, Shrikanth S

    2016-04-01

    Scaling up psychotherapy services such as for addiction counseling is a critical societal need. One challenge is ensuring quality of therapy, due to the heavy cost of manual observational assessment. This work proposes a speech technology-based system to automate the assessment of therapist empathy-a key therapy quality index-from audio recordings of the psychotherapy interactions. We designed a speech processing system that includes voice activity detection and diarization modules, and an automatic speech recognizer plus a speaker role matching module to extract the therapist's language cues. We employed Maximum Entropy models, Maximum Likelihood language models, and a Lattice Rescoring method to characterize high vs. low empathic language. We estimated therapy-session level empathy codes using utterance level evidence obtained from these models. Our experiments showed that the fully automated system achieved a correlation of 0.643 between expert annotated empathy codes and machine-derived estimations, and an accuracy of 81% in classifying high vs. low empathy, in comparison to a 0.721 correlation and 86% accuracy in the oracle setting using manual transcripts. The results show that the system provides useful information that can contribute to automatic quality insurance and therapist training.

  19. Automation of Presentation Record Production Based on Rich-Media Technology Using SNT Petri Nets Theory.

    PubMed

    Martiník, Ivo

    2015-01-01

    Rich-media describes a broad range of digital interactive media that is increasingly used in the Internet and also in the support of education. Last year, a special pilot audiovisual lecture room was built as a part of the MERLINGO (MEdia-rich Repository of LearnING Objects) project solution. It contains all the elements of the modern lecture room determined for the implementation of presentation recordings based on the rich-media technologies and their publication online or on-demand featuring the access of all its elements in the automated mode including automatic editing. Property-preserving Petri net process algebras (PPPA) were designed for the specification and verification of the Petri net processes. PPPA does not need to verify the composition of the Petri net processes because all their algebraic operators preserve the specified set of the properties. These original PPPA are significantly generalized for the newly introduced class of the SNT Petri process and agent nets in this paper. The PLACE-SUBST and ASYNC-PROC algebraic operators are defined for this class of Petri nets and their chosen properties are proved. The SNT Petri process and agent nets theory were significantly applied at the design, verification, and implementation of the programming system ensuring the pilot audiovisual lecture room functionality.

  20. Structural Consequences of Ferroelectric Nanolithography

    SciTech Connect

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  1. Room temperature ferroelectricity in one-dimensional single chain molecular magnets [{M(Δ)M(Λ)}(ox)2(phen)2]n (M = Fe and Mn)

    NASA Astrophysics Data System (ADS)

    Bhatt, Pramod; Mukadam, M. D.; Meena, S. S.; Mishra, S. K.; Mittal, R.; Sastry, P. U.; Mandal, B. P.; Yusuf, S. M.

    2017-03-01

    The ferroelectric materials are mainly focused on pure inorganic oxides; however, the organic molecule based materials have recently attracted great attention because of their multifunctional properties. The mixing of oxalate and phenanthroline ligands with metal ions (Fe or Mn) at room temperature followed by hydrothermal treatment results in the formation of one-dimensional single chain molecular magnets which exhibit room temperature dielectric and ferroelectric behavior. The compounds are chiral in nature, and exhibit a ferroelectric behavior, attributed to the polar point group C2, in which they crystallized. The compounds are also associated with a dielectric loss and thus a relaxation process. The observed electric dipole moment, essential for a ferroelectricity, has been understood quantitatively in terms of lattice distortions at two different lattice sites within the crystal structure. The studied single chain molecular magnetic materials with room temperature ferroelectric and dielectric properties could be of great technological importance in non-volatile memory elements, and high-performance insulators.

  2. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  3. Photorefractive effect in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeo; Naka, Yumiko

    2014-03-01

    In this paper, we review recent progress of research on the photorefractive effect of ferroelectric liquid crystals. The photorefractive effect is a phenomenon that forms a dynamic hologram in a material. The interference of two laser beams in a photorefractive material establishes a refractive index grating. This phenomenon is applicable to a wide range of devices related to diffraction optics including 3D displays, optical amplification, optical tomography, novelty filters, and phase conjugate wave generators. Ferroelectric liquid crystals are considered as a candidate for practical photorefractive materials. A refractive index grating formation time of 8-10 ms and a large gain coefficient are easily obtained in photorefractive ferroelectric liquid crystals.

  4. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    SciTech Connect

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  5. Ferroelectric ceramics in a pyroelectric accelerator

    NASA Astrophysics Data System (ADS)

    Shchagin, A. V.; Miroshnik, V. S.; Volkov, V. I.; Oleinik, A. N.

    2015-12-01

    The applicability of polarized ferroelectric ceramics as a pyroelectric in a pyroelectric accelerator is shown by experiments. The spectra of X-ray radiation of energy up to tens of keV, generated by accelerated electrons, have been measured on heating and cooling of the ceramics in vacuum. It is suggested that curved layers of polarized ferroelectric ceramics be used as elements of ceramic pyroelectric accelerators. Besides, nanotubes and nanowires manufactured from ferroelectric ceramics are proposed for the use in nanometer-scale ceramic pyroelectric nanoaccelerators for future applications in nanotechnologies.

  6. Ferroelectric ceramics in a pyroelectric accelerator

    SciTech Connect

    Shchagin, A. V.; Miroshnik, V. S.; Volkov, V. I.; Oleinik, A. N.

    2015-12-07

    The applicability of polarized ferroelectric ceramics as a pyroelectric in a pyroelectric accelerator is shown by experiments. The spectra of X-ray radiation of energy up to tens of keV, generated by accelerated electrons, have been measured on heating and cooling of the ceramics in vacuum. It is suggested that curved layers of polarized ferroelectric ceramics be used as elements of ceramic pyroelectric accelerators. Besides, nanotubes and nanowires manufactured from ferroelectric ceramics are proposed for the use in nanometer-scale ceramic pyroelectric nanoaccelerators for future applications in nanotechnologies.

  7. Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

    2000-01-01

    The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

  8. Exploring Healthcare Consumer Acceptance of Personal Health Information Management Technology through Personal Health Record Systems

    ERIC Educational Resources Information Center

    Wu, Huijuan

    2013-01-01

    Healthcare technologies are evolving from a practitioner-centric model to a patient-centric model due to the increasing need for technology that directly serves healthcare consumers, including healthy people and patients. Personal health information management (PHIM) technology is one of the technologies designed to enhance an individual's ability…

  9. Exploring Healthcare Consumer Acceptance of Personal Health Information Management Technology through Personal Health Record Systems

    ERIC Educational Resources Information Center

    Wu, Huijuan

    2013-01-01

    Healthcare technologies are evolving from a practitioner-centric model to a patient-centric model due to the increasing need for technology that directly serves healthcare consumers, including healthy people and patients. Personal health information management (PHIM) technology is one of the technologies designed to enhance an individual's ability…

  10. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...) Maintaining a link between records and their metadata through conversion or migration, including capture of all relevant associated metadata at the point of migration (for both the records and the migration...

  11. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...) Maintaining a link between records and their metadata through conversion or migration, including capture of all relevant associated metadata at the point of migration (for both the records and the migration...

  12. 36 CFR § 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...) Maintaining a link between records and their metadata through conversion or migration, including capture of all relevant associated metadata at the point of migration (for both the records and the migration...

  13. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...) Maintaining a link between records and their metadata through conversion or migration, including capture of all relevant associated metadata at the point of migration (for both the records and the migration...

  14. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...) Maintaining a link between records and their metadata through conversion or migration, including capture of all relevant associated metadata at the point of migration (for both the records and the migration...

  15. Micropatterning of Ferroelectric Thin Films by Electron-Beam-Induced Reaction Process

    NASA Astrophysics Data System (ADS)

    Fujii, Tadashi; Matsunaga, Hiroaki; Adachi, Masatoshi

    2008-01-01

    The micropatterning of ferroelectric thin films is a valuable technology for realizing high-density ferroelectric random access memories, sensors and actuators. We fabricated 500-nm- to 20-µm-sized circular dots of (Pb,Sr)TiO3 micropatterns by an electron-beam-induced reaction process using a scanning-electron-microscope-based electron beam lithography system. The piezoelectric response was observed in 10-µm-sized dots by piezoresponse scanning force microscopy. Using an atomic force microscope, every fabricated dot pattern was found to have a mesa shape. To obtain 100-nm-sized dots with high density, further optimization of EB irradiation and crystallization conditions is necessary.

  16. Ferroelectric control of magnetism in BaTiO3/Fe heterostructures via interface strain coupling

    NASA Astrophysics Data System (ADS)

    Sahoo, Sarbeswar; Polisetty, Srinivas; Duan, Chun-Gang; Jaswal, Sitaram S.; Tsymbal, Evgeny Y.; Binek, Christian

    2007-09-01

    Reversible control of magnetism is reported for a Fe thin film in proximity of a BaTiO3 single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTiO3 controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of BaTiO3 . Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.

  17. Colossal Room-Temperature Electrocaloric Effect in Ferroelectric Polymer Nanocomposites Using Nanostructured Barium Strontium Titanates.

    PubMed

    Zhang, Guangzu; Zhang, Xiaoshan; Yang, Tiannan; Li, Qi; Chen, Long-Qing; Jiang, Shenglin; Wang, Qing

    2015-07-28

    The electrocaloric effect (ECE) refers to conversion of thermal to electrical energy of polarizable materials and could form the basis for the next-generation refrigeration and power technologies that are highly efficient and environmentally friendly. Ferroelectric materials such as ceramic and polymer films exhibit large ECEs, but each of these monolithic materials has its own limitations for practical cooling applications. In this work, nanosized barium strontium titanates with systematically varied morphologies have been prepared to form polymer nanocomposites with the ferroelectric polymer matrix. The solution-processed polymer nanocomposites exhibit an extraordinary room-temperature ECE via the synergistic combination of the high breakdown strength of a ferroelectric polymer matrix and the large change of polarization with temperature of ceramic nanofillers. It is found that a sizable ECE can be generated under both modest and high electric fields, and further enhanced greatly by tailoring the morphology of the ferroelectric nanofillers such as increasing the aspect ratio of the nanoinclusions. The effect of the geometry of the nanofillers on the dielectric permittivity, polarization, breakdown strength, ECE and crystallinity of the ferroelectric polymer has been systematically investigated. Simulations based on the phase-field model have been carried out to substantiate the experimental results. With the remarkable cooling energy density and refrigerant capacity, the polymer nanocomposites are promising for solid-state cooling applications.

  18. Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

    2016-10-01

    Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

  19. Validating the Technology Acceptance Model in the Context of the Laboratory Information System-Electronic Health Record Interface System

    ERIC Educational Resources Information Center

    Aquino, Cesar A.

    2014-01-01

    This study represents a research validating the efficacy of Davis' Technology Acceptance Model (TAM) by pairing it with the Organizational Change Readiness Theory (OCRT) to develop another extension to the TAM, using the medical Laboratory Information Systems (LIS)--Electronic Health Records (EHR) interface as the medium. The TAM posits that it is…

  20. Validating the Technology Acceptance Model in the Context of the Laboratory Information System-Electronic Health Record Interface System

    ERIC Educational Resources Information Center

    Aquino, Cesar A.

    2014-01-01

    This study represents a research validating the efficacy of Davis' Technology Acceptance Model (TAM) by pairing it with the Organizational Change Readiness Theory (OCRT) to develop another extension to the TAM, using the medical Laboratory Information Systems (LIS)--Electronic Health Records (EHR) interface as the medium. The TAM posits that it is…

  1. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  2. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    SciTech Connect

    Kalinin, Sergei V; Rodriguez, Brian J; Jesse, Stephen; Karapetian, Edgar; Mirman, B; Eliseev, E. A.; Morozovska, A. N.

    2007-01-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  3. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

    PubMed

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10(5). Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  4. Observation of ferroelectric phase and large spontaneous electric polarization in organic salt of diisopropylammonium iodide

    NASA Astrophysics Data System (ADS)

    Saripalli, Ravi K.; Swain, Diptikanta; Prasad, Siva; Nhalil, Hariharan; Bhat, Handady L.; Guru Row, Tayur N.; Elizabeth, Suja

    2017-03-01

    In this manuscript, we explore diisopropylammonium iodide (DPI) for its ferroelectric properties and phase transitions. DPI showed two phase transitions which were identified by differential scanning calorimetry and dielectric and nonlinear optical measurements. From detailed structural studies it was found that the first transition at 369 K is from orthorhombic P212121 to monoclinic P21. The polar P21 phase is ferroelectric as evidenced by the pyroelectric data and has a very high value of spontaneous polarization (Ps = 33 μC cm-2), which is probably the highest among other reported bulk organic ferroelectrics. The second transition at 415 K is identified as polar monoclinic P21 space group to non-polar monoclinic P21/m. Thus, DPI has a high Curie temperature of 415 K. The large spontaneous polarization and high Curie temperature make DPI technologically important.

  5. Magnetically induced ferroelectricity in TbMnO(3): inverse Goodenough-Kanamori interaction.

    PubMed

    Yamauchi, Kunihiko; Picozzi, Silvia

    2009-02-11

    Improper ferroelectricity in magnets, as induced by non-centrosymmetric spin-, charge- or orbital-ordering, is a branch of the field of multiferroics having fascinating physics and a potentially important technological outcome. We focus here on ferroelectricity in orthorhombic TbMnO(3), where the magnetic field along the a-axis produces a polar collinear spin-arrangement with a rather large in-plane electric polarization. The mechanism, similar to that occurring in orthorhombic HoMnO(3) in the AFM-E phase, is efficiently driven by a large modification of the structural properties (such as MnO bond-lengths and Mn-O-Mn bond-angles) to favor e(g) electron hopping between Mn with parallel spins. A similar mechanism where the t(2g) states are involved is examined through a hypothetical collinear spin-structure, resulting in a weaker out-of-plane ferroelectric polarization.

  6. Magnetically induced ferroelectricity in TbMnO3: inverse Goodenough-Kanamori interaction

    NASA Astrophysics Data System (ADS)

    Yamauchi, Kunihiko; Picozzi, Silvia

    2009-02-01

    Improper ferroelectricity in magnets, as induced by non-centrosymmetric spin-, charge- or orbital-ordering, is a branch of the field of multiferroics having fascinating physics and a potentially important technological outcome. We focus here on ferroelectricity in orthorhombic TbMnO3, where the magnetic field along the a-axis produces a polar collinear spin-arrangement with a rather large in-plane electric polarization. The mechanism, similar to that occurring in orthorhombic HoMnO3 in the AFM-E phase, is efficiently driven by a large modification of the structural properties (such as MnO bond-lengths and Mn-O-Mn bond-angles) to favor eg electron hopping between Mn with parallel spins. A similar mechanism where the t2g states are involved is examined through a hypothetical collinear spin-structure, resulting in a weaker out-of-plane ferroelectric polarization.

  7. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei V.; Rodriguez, Brian J.; Jesse, Stephen; Karapetian, Edgar; Mirman, Boris; Eliseev, Eugene A.; Morozovska, Anna N.

    2007-08-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  8. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    PubMed Central

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-01-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

  9. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  10. Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT

    PubMed Central

    Evans, D.M.; Schilling, A.; Kumar, Ashok; Sanchez, D.; Ortega, N.; Arredondo, M.; Katiyar, R.S.; Gregg, J.M.; Scott, J.F.

    2013-01-01

    Single-phase magnetoelectric multiferroics are ferroelectric materials that display some form of magnetism. In addition, magnetic and ferroelectric order parameters are not independent of one another. Thus, the application of either an electric or magnetic field simultaneously alters both the electrical dipole configuration and the magnetic state of the material. The technological possibilities that could arise from magnetoelectric multiferroics are considerable and a range of functional devices has already been envisioned. Realising these devices, however, requires coupling effects to be significant and to occur at room temperature. Although such characteristics can be created in piezoelectric-magnetostrictive composites, to date they have only been weakly evident in single-phase multiferroics. Here in a newly discovered room temperature multiferroic, we demonstrate significant room temperature coupling by monitoring changes in ferroelectric domain patterns induced by magnetic fields. An order of magnitude estimate of the effective coupling coefficient suggests a value of ~1 × 10−7 sm−1. PMID:23443562

  11. The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

    NASA Technical Reports Server (NTRS)

    Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

    1979-01-01

    The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

  12. Using Health Information Technology to Foster Engagement: Patients' Experiences with an Active Patient Health Record.

    PubMed

    Rief, John J; Hamm, Megan E; Zickmund, Susan L; Nikolajski, Cara; Lesky, Dan; Hess, Rachel; Fischer, Gary S; Weimer, Melissa; Clark, Sunday; Zieth, Caroline; Roberts, Mark S

    2017-03-01

    Personal health records (PHRs) typically employ "passive" communication strategies, such as non-personalized medical text, rather than direct patient engagement in care. Currently there is a call for more active PHRs that directly engage patients in an effort to improve their health by offering elements such as personalized medical information, health coaches, and secure messaging with primary care providers. As part of a randomized clinical trial comparing "passive" with "active" PHRs, we explore patients' experiences with using an "active" PHR known as HealthTrak. The "passive" elements of this PHR included problem lists, medication lists, information about patient allergies and immunizations, medical and surgical histories, lab test results, health reminders, and secure messaging. The active arm included all of these elements and added personalized alerts delivered through the secure messaging platform to patients for services coming due based on various demographic features (including age and sex) and chronic medical conditions. Our participants were part of the larger clinical trial and were eligible if they had been randomized to the active PHR arm, one that included regular personalized alerts. We conducted focus group discussions on the benefits of this active PHR for patients who are at risk for cardiovascular disease. Forty-one patients agreed to participate and were organized into five separate focus group sessions. Three main themes emerged from the qualitatively analyzed focus groups: participants reported that the active PHR promoted better communication with providers; enabled them to more effectively partner with their providers; and helped them become more proactive about tracking their health information. In conclusion, patients reported improved communication, partnership with their providers, and a sense of self-management, thus adding insights for PHR designers hoping to address low adoption rates and other patient barriers to the development

  13. Ferroelectricity in yttrium-doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Müller, J.; Schröder, U.; Böscke, T. S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.

    2011-12-01

    Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO1.5 in HfO2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO1.5 admixture the remanent polarization peaked at 24 μC/cm2 with a coercive field of about 1.2 MV/cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO2 implies high scaling potential for future, ferroelectric memories.

  14. Negative capacitance in a ferroelectric capacitor.

    PubMed

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  15. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  16. Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces.

    PubMed

    Nelson, Christopher T; Winchester, Benjamin; Zhang, Yi; Kim, Sung-Joo; Melville, Alexander; Adamo, Carolina; Folkman, Chad M; Baek, Seung-Hyub; Eom, Chang-Beom; Schlom, Darrell G; Chen, Long-Qing; Pan, Xiaoqing

    2011-02-09

    The polarization of the ferroelectric BiFeO(3) sub-jected to different electrical boundary conditions by heterointerfaces is imaged with atomic resolution using a spherical aberration-corrected transmission electron microscope. Unusual triangular-shaped nanodomains are seen, and their role in providing polarization closure is understood through phase-field simulations. Heterointerfaces are key to the performance of ferroelectric devices, and this first observation of spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces reveals properties unlike the surrounding film including mixed Ising-Néel domain walls, which will affect switching behavior, and a drastic increase of in-plane polarization. The importance of magnetization closure has long been appreciated in multidomain ferromagnetic systems; imaging this analogous effect with atomic resolution at ferroelectric heterointerfaces provides the ability to see device-relevant interface issues. Extension of this technique to visualize domain dynamics is envisioned.

  17. Interface control of bulk ferroelectric polarization

    PubMed Central

    Yu, P.; Luo, W.; Yi, D.; Zhang, J. X.; Rossell, M. D.; Yang, C.-H.; You, L.; Singh-Bhalla, G.; Yang, S. Y.; He, Q.; Ramasse, Q. M.; Erni, R.; Martin, L. W.; Chu, Y. H.; Pantelides, S. T.; Pennycook, S. J.; Ramesh, R.

    2012-01-01

    The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon. PMID:22647612

  18. Local polarization switching in stressed ferroelectric polymers

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2017-05-01

    Ferroelectric polymers are used in flexible organic ferroelectric memories, ferroelectric polarization enhanced organic solar cells, and organic multiferroics. Therefore, understanding their polarization switching mechanism under bending is important for the operation of such devices. Here, we study locally by piezoresponse force microscopy (PFM) polarization switching in bent thin films of the ferroelectric polymer poly(vinylidene fluoride-ran-trifluoroethylene). In bent samples, higher probability of domain nucleation, faster domain wall propagation, and lower coercive field are consistently observed by PFM. We ascribe these observations to a decrease of the domain wall pinning energy, resulting from the mechanical energy stored in the sample due to bending in the presence of the compression gradient generated below the PFM tip.

  19. Electronic electrooptic effects in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Rickard, Malcolm J.

    2005-11-01

    There are a variety of potential applications in telecommunications and data processing for high-speed second-order nonlinear electronic electro-optic (EEO) switches in chip-based electronics. In these applications the ability to process optical materials and to integrate the electro-optical and electronic components are key issues that have led to the interest in and development of organic-based electro-optical materials. Ferroelectric liquid crystals (FLCs) have potential because they are intrinsically polar by symmetry, a result of their tilted chiral smectic structure, which puts chiral molecules in a monoclinic environment. The directed design of FLCs for second order NLO and EEO applications has evolved a systematic increase in their performance in recent years with electrooptic coefficients, r ˜ 3 pm/V, demonstrated in EEO devices and d ˜ 20 pm/V in NLO applications. The integration of FLCs with silicon-based electronics is a proven commercial technology, but to apply FLCs for EEO it is clear that LC materials with larger second-order nonlinear coefficients (susceptibilities) must be developed. In this dissertation EEO characteristics of FLCs are explored. Including bent-core molecules and materials for potential telecommunication use, probing the modulation of the refractive index for lambda = 1310 nm light induced by applied radio frequency (RF) electric field.

  20. Electrocaloric cooling based on relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Suchaneck, Gunnar; Gerlach, Gerald

    2015-03-01

    In this work, we consider the electrocaloric effect in relaxor ferroelectrics above the temperature of the dielectric constant maximum. For the purpose of modelling, a modified Curie--Weiss law was adapted to approximate the complex physics of relaxors. The requirements to electrocaloric materials derived on this basis are fulfilled by relaxor single crystals, ceramics and high-quality thin films. Relaxor ferroelectrics exhibit a suitable electrocaloric performance starting at applied electric fields of about 25 V/μm.

  1. Three perimeter effects in ferroelectric nanostructures

    NASA Astrophysics Data System (ADS)

    Ruediger, Andreas; Peter, Frank; Waser, Rainer

    2006-03-01

    As the lateral size of ferroelectric nanoislands is now well below 50 nm, the question of size effects becomes increasingly relevant. Three independent techniques provided data of pronounced ferroelectric features along the perimeter: impedance spectroscopy [1], piezoelectric force microscopy [2] and pyroelectric current sensing [3]. However, as we can show, all three observations are related to the measurement technique that interferes with the lateral confinement and still there is no direct evidence of a lateral size effect in ferroelectric nanostructures. We discuss some scenarios of further downscaling and possible consequences. [1]M.Dawber, D.J. Jung, J.F. Scott, “Perimeter effect in very small ferroelectrics“,Appl. Phys. Lett. 82, 436 (2003) [2 ]F. Peter, A. Ruediger, R. Dittmann, R. Waser, K. Szot, B. Reichenberg, K. Prume, “Analysis of shape effects on the piezoresponse in ferroelectric nanograins with and without adsorbates”, Applied Physics Letters, 87, 082901 (2005) [3] B.W. Peterson, S. Ducharme, V.M. Fridkin, “Mapping surface Polarization in thin films of the ferroelectric polymer P(VDF-TrFE)”,Ferroelectrics, 304, 51 (2004)

  2. Enhancing interfacial magnetization with a ferroelectric

    DOE PAGES

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; ...

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can bemore » greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.« less

  3. Enhancing interfacial magnetization with a ferroelectric

    NASA Astrophysics Data System (ADS)

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-01

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZ r0.2T i0.8O3/L a0.8S r0.2Mn O3(PZT /LSMO ) ] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0 μB/f .u . , a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  4. Multiscale dynamics in relaxor ferroelectrics

    SciTech Connect

    Toulouse, J.; Cai, L; Pattnaik, R. K.; Boatner, Lynn A

    2014-01-01

    The multiscale dynamics of complex oxides is illustrated by pairs of mechanical resonances that are excited in the relaxor ferroelectric K1 xLixTaO3 (KLT). These macroscopic resonances are shown to originate in the collective dynamics of piezoelectric polar nanodomains (PND) interacting with the surrounding lattice. Their characteristic Fano lineshapes and rapid evolution with temperature reveal the coherent interplay between the piezoelectric oscillations and orientational relaxations of the PNDs at higher temperature and the contribution of heterophase oscillations near the phase transition. A theoretical model is presented, that describes the evolution of the resonances over the entire temperature range. Similar resonances are observed in other relaxors and must therefore be a common characteristics of these systems.

  5. Magnetic control of ferroelectric interfaces

    NASA Astrophysics Data System (ADS)

    Dussan, S.; Kumar, A.; Katiyar, R. S.; Priya, S.; Scott, J. F.

    2011-05-01

    We report the strong magnetic field dependence of ferroelectric PbZr0.52Ti0.48O3 (PZT) films on half-metallic oxide La0.67Sr0.33MnO3 (LSMO) electrodes. As the field H is increased, the hysteresis loop first broadens (becomes lossy) and then disappears at approximately H = 0.34 T and ambient temperatures. The data are compared with the theories of Pirč et al (2009 Phys. Rev. B 79 214114), Parish and Littlewood (2008 Phys. Rev. Lett. 101 166602) and Catalan (2006 Appl. Phys. Lett. 88 102902). The results are interpreted as due not to magnetocapacitance but to the sharp negative magnetoresistance in LSMO at low magnetic fields (Hwang et al 1996 Phys. Rev. Lett. 77 2041), which causes a dramatic increase in leakage current through the PZT.

  6. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    SciTech Connect

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  7. Application of video recording technology to improve husbandry and reproduction in the carmine bee-eater (Merops n. nubicus).

    PubMed

    Ferrie, Gina M; Sky, Christy; Schutz, Paul J; Quinones, Glorieli; Breeding, Shawnlei; Plasse, Chelle; Leighty, Katherine A; Bettinger, Tammie L

    2016-01-01

    Incorporating technology with research is becoming increasingly important to enhance animal welfare in zoological settings. Video technology is used in the management of avian populations to facilitate efficient information collection on aspects of avian reproduction that are impractical or impossible to obtain through direct observation. Disney's Animal Kingdom(®) maintains a successful breeding colony of Northern carmine bee-eaters. This African species is a cavity nester, making their nesting behavior difficult to study and manage in an ex situ setting. After initial research focused on developing a suitable nesting environment, our goal was to continue developing methods to improve reproductive success and increase likelihood of chicks fledging. We installed infrared bullet cameras in five nest boxes and connected them to a digital video recording system, with data recorded continuously through the breeding season. We then scored and summarized nesting behaviors. Using remote video methods of observation provided much insight into the behavior of the birds in the colony's nest boxes. We observed aggression between birds during the egg-laying period, and therefore immediately removed all of the eggs for artificial incubation which completely eliminated egg breakage. We also used observations of adult feeding behavior to refine chick hand-rearing diet and practices. Although many video recording configurations have been summarized and evaluated in various reviews, we found success with the digital video recorder and infrared cameras described here. Applying emerging technologies to cavity nesting avian species is a necessary addition to improving management in and sustainability of zoo avian populations.

  8. Synthesis, deposition and characterization of ferroelectric films for electrooptic devices

    NASA Astrophysics Data System (ADS)

    Tunaboylu, Bahadir

    The use of integrable ferroelectric electro-optic thin films is a revolutionary approach in the development of high-speed, low-voltage and high-contrast ratio integrated electro-optic spatial light modulators (SLM) for free-space optoelectronic interconnects. Thin films offer improved performance over bulk ferroelectric (FE) materials because of their lower modulator capacitance and operation at high speeds with low switching energies. Integration of ferroelectric thin films with silicon technology will also impact both the uncooled infrared sensor and dynamic and nonvolatile memory technologies. Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and patassium tantalate niobate (KTN) present great potential for SLMs due to their large electro-optic (EO) effect in the bulk form. The development of thin-film SLMs require electro-optic films of high optical quality with good dielectric and EO properties. High quality thin films of PLZT and KTN were deposited using RF magnetron sputtering on r-plane sapphire substrates which offer integration capability with semiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 at the Curie temperature of 180sp°C, were achieved with remarkably low dissipation loss factor <0.04. The dielectric frequency dispersion was determined to be very small up to 1 Mhz. Also, the absorption of the light in the films was very low. A giant effective quadratic electrooptic effect was demonstrated in PLZT films. These results represent a huge leap forward for the FE-SLM technology with respect to the goal of fully integrated thin film electrooptic light modulators. Microstructural development and phase transformation kinetics in PLZT films were also analyzed for the first time and are presented here. Energy required for the formation of desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT films with larger average grain size showed higher dielectric constants and better EO

  9. Testing of New Ferroelectric Elements Custom Engineered for Explosively Driven Ferroelectric Applications

    DTIC Science & Technology

    2007-06-01

    the active ferroelectric element most FEG designs use commercial lead zirconate-titanate ( PZT ) compositions designed for either precision actuators...through application of high temperatures, high mechanical stresses or high electric fields. For cost and durability reasons most ferroelectric...lead zirconate-titanate ( PZT ) compositions designed for either precision actuators or naval sonar transducers. However, the material properties that are

  10. Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

    NASA Astrophysics Data System (ADS)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF-TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization-electric field loop and piezoelectricity in the P(VDF-TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF-TrFE) layer.

  11. Improving the Quality of Nursing Home Care and Medical-Record Accuracy with Direct Observational Technologies

    ERIC Educational Resources Information Center

    Schnelle, John F.; Osterweil, Dan; Simmons, Sandra F.

    2005-01-01

    Nursing home medical-record documentation of daily-care occurrence may be inaccurate, and information is not documented about important quality-of-life domains. The inadequacy of medical record data creates a barrier to improving care quality, because it supports an illusion of care consistent with regulations, which reduces the motivation and…

  12. Measuring Maturity of Use for Electronic Medical Records (EMRs) in British Columbia: The Physician Information Technology Office (PITO).

    PubMed

    Rimmer, Carol; Hagens, Simon; Baldwin, Anne; Anderson, Carol J

    2014-01-01

    This article examines British Columbia (BC)'s Physician Information Technology Office's efforts to measure and improve the use of electronic medical records (EMRs) by select practices in BC with an assessment of their progress using a maturity model, and targeted support. The follow-up assessments showed substantial increases in the physicians' scores resulting from action plans that comprised a series of tailored support activities. Specifically, there was an increase from 21% to 83% of physicians who could demonstrate that they used their EMRs as the principal method of record-keeping.

  13. Magnetic Recording.

    ERIC Educational Resources Information Center

    Lowman, Charles E.

    A guide to the technology of magnetic recorders used in such fields as audio recording, broadcast and closed-circuit television, instrumentation recording, and computer data systems is presented. Included are discussions of applications, advantages, and limitations of magnetic recording, its basic principles and theory of operation, and its…

  14. THE FERROELECTRIC AND STRUCTURAL PROPERTIES OF HAFNIUM OXIDE COMPOUNDS,

    DTIC Science & Technology

    HAFNIUM COMPOUNDS, OXIDES), (* FERROELECTRICITY , HAFNIUM COMPOUNDS), (*CRYSTAL STRUCTURE, HAFNIUM COMPOUNDS), DIELECTRIC PROPERTIES, HYSTERESIS... FERROELECTRIC MATERIALS, SOLID SOLUTIONS, X RAY DIFFRACTION, CRYSTAL LATTICES, LOW TEMPERATURE, CALCIUM COMPOUNDS, STRONTIUM COMPOUNDS, LEAD COMPOUNDS, BARIUM COMPOUNDS

  15. INVESTIGATION OF A COMPOUND REPORTED AS BOTH FERRIMAGNETIC AND FERROELECTRIC,

    DTIC Science & Technology

    FERRITES , *FERROELECTRIC CRYSTALS, MAGNETIC PROPERTIES, X RAY DIFFRACTION, IMPURITIES, FERROELECTRICITY, FERROMAGNETISM, CRYSTAL STRUCTURE...DIELECTRIC PROPERTIES, MICROSCOPY, BARIUM COMPOUNDS, SAMARIUM COMPOUNDS, NIOBIUM COMPOUNDS, TITANIUM COMPOUNDS, TITANATES, PHOTOMICROGRAPHY, CRYSTAL LATTICES, OXIDES.

  16. 2009 Mississippi Curriculum Framework: Postsecondary Health Information Technology. (Program CIP-51.0707-Medical Records Technology/Technician)

    ERIC Educational Resources Information Center

    Hoffman, Casey; Jones, Robin; McGuffee, Michelle; Scott, Nena

    2009-01-01

    As the world economy continues to evolve, businesses and industries must adopt new practices and processes in order to survive. Quality and cost control, work teams and participatory management, and an infusion of technology are transforming the way people work and do business. Employees are now expected to read, write, and communicate…

  17. Foreign technology alert-bibliography: Photography and recording devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Wilkinson, G.

    1982-11-01

    A systematically organized collection of abstracts from a bibliographic data base is provided on reports relating to photographic, imaging and recording systems originating from countries outside the USA. A tailored search of the data base was performed and the output carefully categorized, edited and indexed. Subjects covered include: photographic devices and imaging systems (cameras, image carriers, holography and applications); audiovisual recording (digital, magnetic and video); date encoding, recording and storage; and satellite equipment. Each of the sections in the book is cross-referenced and there is also an author index and useful subject index based on major descriptors.

  18. Using technology to teach technology: design and evaluation of bilingual online physician education about electronic medical records.

    PubMed

    Edmonson, Sarah R; Esquivel, Adol; Mokkarala, Pallavi; Johnson, Craig W; Phelps, Cynthia L

    2005-01-01

    The "EMR Tutorial" is designed to be a bilingual online physician education environment about electronic medical records. After iterative assessment and redesign, the tutorial was tested in two groups: U.S. physicians and Mexican medical students. Split-plot ANOVA revealed significantly different pre-test scores in the two groups, significant cognitive gains for the two groups overall, and no significant difference in the gains made by the two groups. Users rated the module positively on a satisfaction questionnaire.

  19. [The impact of technological change on census taking: some thoughts on implications for the 1990 round of censuses and on the statistical use of administrative records].

    PubMed

    Brackstone, G J

    1984-01-01

    The author presents some general thoughts on the implications of technological change for the 1990 round of censuses and for the statistical use of administrative records. Consideration is also given to alternative methods of obtaining the type of data traditionally collected in a population census, by using these new technologies in association with administrative record systems.

  20. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    SciTech Connect

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Mitoseriu, Liliana; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen

    2013-02-21

    Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  1. Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1995-01-01

    Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

  2. Key integration technologies for nanoscale FRAMs.

    PubMed

    Jung, Dong J; Kim, Hyun-Ho; Kim, Kinam

    2007-12-01

    We discuss key technologies of 180-nm node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with metal-insulator-metal (MIM) capacitors. The key integration technologies in ferroelectric random access memory (FRAM) comprise: etching technology to have less plasma damage; stack technology for the preparation of robust ferroelectrics; capping technology to encapsulate cell capacitors; and vertical conjunction technology to connect cell capacitors to the plate line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but also to ensure a sensing margin of 300 mV in opposite-state retention, even after 1000 hour suffering at 150 degrees C.

  3. Ferroelectric properties of niobium-doped strontium bismuth tantalate films

    NASA Astrophysics Data System (ADS)

    Golosov, D. A.; Zavadski, S. M.; Kolos, V. V.; Turtsevich, A. S.

    2016-01-01

    The characteristics of ferroelectric thin films of strontium bismuth tantalate (SBT) and niobium-doped strontium bismuth tantalate (SBTN) deposited by radio-frequency (RF) magnetron sputtering on Pt/TiO2/SiO2/Si substrates were investigated. For the formation of the structure of the ferroelectric material, the deposited films were subjected to a subsequent annealing at temperatures of 970-1070 K in an O2 atmosphere. The results of the X-ray diffraction analysis demonstrated that, in contrast to SBT films, in which the Aurivillius phase is formed only at annealing temperatures of 1050-1070 K, the formation of this phase in SBTN films is observed already at a temperature of 970 K. The dependences of the dielectric permittivity, remanent polarization, and coercive force of the SBT and SBTN films on the subsequent annealing conditions were determined. It was found that, upon doping of the SBT films with niobium, the remanent polarization increases by a factor of approximately three, the Curie temperature increases by 50 K, and the dielectric permittivity also increases. It was revealed that, in contrast to the SBT films, the polarization of the SBTN films is observed already at an annealing temperature of approximately 970 K. It was shown that the replacement of SBT films by SBTN films in the manufacture of high-density nonvolatile ferroelectric randomaccess memory (FeRAM) capacitor modules makes it possible to decrease the synthesis temperature from 1070 to 990-1000 K, which improves the compatibility with the planar technology of semiconductor devices. However, it turned out that an increase in the coercive field makes niobium-doped SBT films less attractive for the use in FeRAM.

  4. Using second-order diffraction when obtaining combined holograms consisting of a rainbow hologram and a hologram recorded using dot-matrix technology

    NASA Astrophysics Data System (ADS)

    Gal'Pern, A. D.; Paramonov, A. A.; Sysoev, M. Yu.

    2006-07-01

    This paper discusses a method of combining relief-phase rainbow holograms recorded by the Benton method and holograms recorded by means of the dot-matrix technology on one medium. In doing this, two different photoresist compositions were used to record the holograms, at wavelengths 488 and 441.6 nm.

  5. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-09

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

  6. Flexible graphene-PZT ferroelectric nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Lee, Wonho; Kahya, Orhan; Tat Toh, Chee; Özyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm-2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  7. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  8. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  9. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  10. Exploring the feasibility of integrating barcode scanning technology into vaccine inventory recording in seasonal influenza vaccination clinics.

    PubMed

    Pereira, Jennifer A; Quach, Susan; Hamid, Jemila S; Heidebrecht, Christine L; Quan, Sherman D; Nassif, Jane; Diniz, Amanda Jane; Van Exan, Robert; Malawski, Jeffrey; Gentry, Adrian; Finkelstein, Michael; Guay, Maryse; Buckeridge, David L; Bettinger, Julie A; Kalailieff, Donna; Kwong, Jeffrey C

    2012-01-17

    In response to the need for improved quality of vaccine inventory and client immunization records, barcodes containing a unique identifier and lot number will be placed on all vaccine vials in Canada. We conducted feasibility studies to examine integration of barcode scanning into inventory recording workflow for mass immunization clinics. During the 2010-2011 seasonal influenza vaccination campaign, Ontario public health units (PHUs) using an electronic immunization system were randomized to record clinic inventory data (including vaccine lot number and expiry date) through: (i) barcode scanning of vials; or (ii) drop-down menus. A third group of PHUs recording vaccine inventory on paper served as an observation arm. We visited a sample of clinics within each PHU to assess barcode readability, method efficiency and data quality. Clinic staff completed a survey examining method perceptions. We observed 20 clinics using barcode scanning to record inventory data (eight PHUs), 20 using drop-down menus (eight PHUs), and 21 using paper forms (five PHUs). Mean time spent recording data per vial was 4.3s using barcode scanners with 1.3 scan attempts per vial, 0.5s using drop-down menus, and 1.7s using paper. Few errors were observed. Sixty-four perception surveys were completed by inventory staff; barcode scanning users indicated fairly strong overall satisfaction with the method (74%), and the majority agreed that barcode scanning improved client safety (84%) and inventory record accuracy (77%). However, 38% of barcode scanning users felt that individually scanning vials took longer than the other approaches and 26% indicated that this increased time would discourage them from adopting the method. Our study demonstrated good readability of barcodes but scanning individual vials for high-volume clinics was time-consuming; modifying the process will improve feasibility to facilitate adoption in Canada, while serving as an example for other countries considering this

  11. An investigation of the effect of nurses’ technology readiness on the acceptance of mobile electronic medical record systems

    PubMed Central

    2013-01-01

    Background Adopting mobile electronic medical record (MEMR) systems is expected to be one of the superior approaches for improving nurses’ bedside and point of care services. However, nurses may use the functions for far fewer tasks than the MEMR supports. This may depend on their technological personality associated to MEMR acceptance. The purpose of this study is to investigate nurses’ personality traits in regard to technology readiness toward MEMR acceptance. Methods The study used a self-administered questionnaire to collect 665 valid responses from a large hospital in Taiwan. Structural Equation modeling was utilized to analyze the collected data. Results Of the four personality traits of the technology readiness, the results posit that nurses are optimistic, innovative, secure but uncomfortable about technology. Furthermore, these four personality traits were all proven to have a significant impact on the perceived ease of use of MEMR while the perceived usefulness of MEMR was significantly influenced by the optimism trait only. The results also confirmed the relationships between the perceived components of ease of use, usefulness, and behavioral intention in the Technology Acceptance Model toward MEMR usage. Conclusions Continuous educational programs can be provided for nurses to enhance their information technology literacy, minimizing their stress and discomfort about information technology. Further, hospital should recruit, either internally or externally, more optimistic nurses as champions of MEMR by leveraging the instrument proposed in this study. Besides, nurses’ requirements must be fully understood during the development of MEMR to ensure that MEMR can meet the real needs of nurses. The friendliness of user interfaces of MEMR and the compatibility of nurses’ work practices as these will also greatly enhance nurses’ willingness to use MEMR. Finally, the effects of technology personality should not be ignored, indicating that hospitals

  12. Short range magnetic exchange interaction favors ferroelectricity

    PubMed Central

    Wan, Xiangang; Ding, Hang-Chen; Savrasov, Sergey Y.; Duan, Chun-Gang

    2016-01-01

    Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science. To search multiferroics, currently most researches are focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced ferroelectricity under a biaxial strain. In addition, we show that such mechanism also exists in the most important single phase multiferroics, i.e. BiFeO3, suggesting that this mechanism is ubiquitous in systems with superexchange interaction. PMID:26956480

  13. From "Mystery Train" to "Cyberspace Sadie": References to Technology in Blues Recordings, 1923-2003

    ERIC Educational Resources Information Center

    Cooper, B. Lee

    2006-01-01

    Over the past eight decades the lyrics of blues recordings have provided valuable insights into the opinions and feelings of singers and songwriters. Commentaries concerning workplace relations, self esteem, romantic involvements, financial security, clothing styles, alcohol use, religion, health, death, and other universal human issues have been…

  14. From "Mystery Train" to "Cyberspace Sadie": References to Technology in Blues Recordings, 1923-2003

    ERIC Educational Resources Information Center

    Cooper, B. Lee

    2006-01-01

    Over the past eight decades the lyrics of blues recordings have provided valuable insights into the opinions and feelings of singers and songwriters. Commentaries concerning workplace relations, self esteem, romantic involvements, financial security, clothing styles, alcohol use, religion, health, death, and other universal human issues have been…

  15. Unit Record Equipment-Basic (Course Outline), Data Processing Technology: 8025.14.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    This outline provides a guide for the instructor of unit record equipment at the tenth, eleventh, and twelfth grade levels. The first week is spent reviewing punched card principles, and the remaining hours are devoted to learning the purpose, operation, and principles of control panel wiring for the interpreter, reproducing punch, accounting…

  16. Nuclear Technology. Course 28: Welding Inspection. Module 28-10, Records.

    ERIC Educational Resources Information Center

    Espy, John

    This tenth in a series of ten modules for a course titled Welding Inspection describes records associated with welding which serve three functions: specification of agreements, initiation of action in fulfillment of agreement, and historical evidence of action taken. The module follows a typical format that includes the following sections: (1)…

  17. Principles for Information Technology Investment in U.S. Federal Electronic Records Management.

    ERIC Educational Resources Information Center

    Van Wingen, Rachel Senner; Hathorn, Fred; Sprehe, J. Timothy

    1999-01-01

    The United States Environmental Protection Agency (EPA) underwent a business process reengineering (BPR) exercise with respect to future co-location of previously separate regulatory docket facilities. Their experience suggests that future mandatory electronic records management (ERM) requirements will cause federal agencies to take a more…

  18. Permanent ferroelectric retention of BiFeO3 mesocrystal

    PubMed Central

    Hsieh, Ying-Hui; Xue, Fei; Yang, Tiannan; Liu, Heng-Jui; Zhu, Yuanmin; Chen, Yi-Chun; Zhan, Qian; Duan, Chun-Gang; Chen, Long-Qing; He, Qing; Chu, Ying-Hao

    2016-01-01

    Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal. PMID:27782123

  19. Flexible ferroelectric element based on van der Waals heteroepitaxy.

    PubMed

    Jiang, Jie; Bitla, Yugandhar; Huang, Chun-Wei; Do, Thi Hien; Liu, Heng-Jui; Hsieh, Ying-Hui; Ma, Chun-Hao; Jang, Chi-Yuan; Lai, Yu-Hong; Chiu, Po-Wen; Wu, Wen-Wei; Chen, Yi-Chun; Zhou, Yi-Chun; Chu, Ying-Hao

    2017-06-01

    We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.

  20. Flexible ferroelectric element based on van der Waals heteroepitaxy

    PubMed Central

    Jiang, Jie; Bitla, Yugandhar; Huang, Chun-Wei; Do, Thi Hien; Liu, Heng-Jui; Hsieh, Ying-Hui; Ma, Chun-Hao; Jang, Chi-Yuan; Lai, Yu-Hong; Chiu, Po-Wen; Wu, Wen-Wei; Chen, Yi-Chun; Zhou, Yi-Chun; Chu, Ying-Hao

    2017-01-01

    We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems. PMID:28630922

  1. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-01

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  2. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

    PubMed

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-08

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  3. Ferroelectric Properties of Ultrathin Perovskite Heterostructures.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier

    2004-03-01

    Due to their switchable spontaneous polarization, ferroelectric thin films can be used in non-volatile ferroelectric random access memories (FeRAMs). Recently, 30 Gbit/cm^2 data storage densities have been demonstrated for Pb(Zr_0.2Ti_0.8)O3 films on a metallic oxide electrode (T. Tybell et al.), Phys. Rev. Lett. 89, 097601 (2002). While industry's demands for ultrahigh density information storage imposes a reduction of the cell-sizes and thicknesses of the ferroelectric thin films, fundamental questions concerning thickness dependence of ferroelectricity and related properties becomes crucial. Using a first-principles density-functional-theory approach (J. M. Soler et al.), J. Phys.: Condens. Matter 14, 2745 (2002) we have simulated the behaviour at 0 K of a typical ferroelectric capacitor epitaxially grown on a SrTiO3 substrate and made of an ultrathin film of BaTiO3 in between two SrRuO3 electrodes in short circuit (J. Junquera and Ph. Ghosez, Nature 422), 506 (2003). Both the electrical and the mechanical boundary conditions were properly considered in the calculations. We predict the existence of a critical thickness for ferroelectricity of about six unit cells (26 Ang), and relate it to an incomplete screening of the depolarizing field by real metallic electrodes. Transposing these ideas into a first-principles-based model Hamiltonian, (U. V. Waghmare and K. M. Rabe, Phys. Rev. B 55), 6161 (1997) and using Monte Carlo simulations, we have analyzed the temperature dependence of the thickness evolution of the polarization and tetragonality of the samples, as well as the piezoelectric and dielectric tensors. Our theoretical results show good agreement with very recent experimental measurements.

  4. Fatigue and hysteresis modeling of ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Yoo, In. K.; Desu, Seshu B.

    1993-10-01

    Due to their nonlinear properties, ferroelectric materials are ideal candidates for smart materials. Degradation properties such as low voltage breakdown, fatigue, and aging have been major problems in commercial applications of these materials. Such degradations affect the lifetime of ferroelectric materials. Therefore, it is important to understand degradation for reliability improvement. In this article, recent studies on fatigue and hysteresis of ferroelectric ceramics such as Lead Zirconate Titanate (PZT) thin films is reviewed. A new fatigue model is discussed in detail which is based on effective one-directional movement of defects by internal field difference, defect entrapment at the ferroelectrics-electrode interface, and resultant polarization loss at the interface. A fatigue equation derived from this model is presented. Fatigue parameters such as initial polarization, piling constant, and decay constant are defined from the fatigue equation and voltage and temperature dependence of fatigue parameters are discussed. The jump distance of defect calculated from voltage dependence of the decay constant is close to the lattice constant of ferroelectric materials, which implies that oxygen or lead vacancies migrate either parallel or antiparallel to the polarization direction. From the temperature dependence of the decay constant, it is shown that the activation energy for domain wall movement plays an important role in fatigue. The hysteresis model of ferroelectrics is shown using polarization reversal. The hysteresis loop is made by four polarization stages: nucleation, growth, merging, and shrinkage of domains. The hysteresis equation confirms that dielectric viscosity controls hysteresis properties, and temperature dependence of the coefficient of dielectric viscosity is also discussed in conjunction with fatigue mechanism.

  5. Enhancing interfacial magnetization with a ferroelectric

    SciTech Connect

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  6. Changes to the electronic health records market in light of health information technology certification and meaningful use.

    PubMed

    Vest, Joshua R; Yoon, Jangho; Bossak, Brian H

    2013-01-01

    Health information technology (HIT) certification and meaningful use are interventions encouraging the adoption of electronic health records (EHRs) in the USA. However, these initiatives also constitute a significant intervention which will change the structure of the EHR market. To describe quantitatively recent changes to both the demand and supply sides of the EHR market. A cohort of 3447 of hospitals from the HIMSS Analytics Database (2006-10) was created. Using hospital referral regions to define the local market, we determined the percentage of hospitals using paper records, the number of vendors, and local EHR vendor competition using the Herfindahl-Hirschman Index. Changes over time were assessed using a series of regression equations and geographic information systems analyses. Overall, there was movement away from paper records, upward trends in the number of EHR vendors, and greater competition. However, changes differed according to hospital size and region of the country. Changes were greatest for small hospitals, whereas competition and the number of vendors did not change dramatically for large hospitals. The EHR market is changing most dramatically for those least equipped to handle broad technological transformation, which underscores the need for continued targeted support. Furthermore, wide variations across the nation indicate a continued role for states in the support of EHR utilization. The structure of the EHR market is undergoing substantial changes as desired by the proponents and architects of HIT certification and meaningful use. However, these transformations are not uniform for all hospitals or all the country.

  7. On implicit constitutive relations in elastic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Arvanitakis, Antonios

    2017-10-01

    A considerable effort is being made to foster the use of implicit constitutive relations in mechanics of the continuous medium. From this point of view, the class of elastic bodies extends to a much larger category than the classical Cauchy and Green elastic bodies. In this work, a subclass of the recently proposed classes of electro-elastic bodies is taken into consideration to propose models for elastic ferroelectrics. These models, even though they are not based on thermodynamical arguments, seem capable enough to provide the hysteretic behavior of ferroelectric materials.

  8. Ferroelectric Cathodes in Transverse Magnetic Fields

    SciTech Connect

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-07-29

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode.

  9. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  10. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.

  11. 95 GHz gyrotron with ferroelectric cathode.

    PubMed

    Einat, M; Pilossof, M; Ben-Moshe, R; Hirshbein, H; Borodin, D

    2012-11-02

    Ferroelectric cathodes were reported as a feasible electron source for microwave tubes. However, due to the surface plasma emission characterizing this cathode, operation of millimeter wave tubes based on it remains questionable. Nevertheless, the interest in compact high power sources of millimeter waves and specifically 95 GHz is continually growing. In this experiment, a ferroelectric cathode is used as an electron source for a gyrotron with the output frequency extended up to 95 GHz. Power above a 5 kW peak and ~0.5 μs pulses are reported; a duty cycle of 10% is estimated to be achievable.

  12. Static ferroelectric memory transistor having improved data retention

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.

    1996-01-01

    An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

  13. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    DOE PAGES

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; ...

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through chargemore » injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.« less

  14. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    SciTech Connect

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I.; Yu, Pu; Kalinin, Sergei V.

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.

  15. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  16. First-principles study of interface doping in ferroelectric junctions

    NASA Astrophysics Data System (ADS)

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-04-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)- monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions.

  17. First-principles study of interface doping in ferroelectric junctions

    PubMed Central

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-01-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)− monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions. PMID:27063704

  18. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy.

    PubMed

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I; Yu, Pu; Kalinin, Sergei V

    2015-06-23

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. We will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In the end, we apply the developed measurement protocols to an unknown ferroelectric material.

  19. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

    PubMed Central

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

    2016-01-01

    The ability to generate efficient giga–terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics. PMID:27492493

  20. Retention in nonvolatile silicon transistors with an organic ferroelectric gate

    NASA Astrophysics Data System (ADS)

    Gysel, Roman; Stolichnov, Igor; Tagantsev, Alexander K.; Riester, Sebastian W. E.; Setter, Nava; Salvatore, Giovanni A.; Bouvet, Didier; Ionescu, Adrian M.

    2009-06-01

    A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n-type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable and reproducible memory effect changing the source-drain current by a factor 102-103, with the retention exceeding 2-3 days. Analysis of the drain current relaxation and time-resolved study of the spontaneous polarization via piezoforce scanning probe microscopy indicates that the retention loss is controlled by the interface-adjacent charge injection rather than the polarization instability. A semiquantitative model describes the time-dependent retention loss characterized by an exponential decay of the open state current of the transistor. The unique combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene, including an adequate spontaneous polarization and low dielectric constant as well as rather benign processing demands, makes this material a promising candidate for memories fully compatible with silicon technology.

  1. Correlationally Assessing the Relationship of Information Technology Investments in Electronic Medical Records to Business Value

    ERIC Educational Resources Information Center

    Richardson, Daniel J.

    2009-01-01

    The lag in information exchange and assimilation adoption experienced by modern primary care physicians in the conduct of evidence based medicine may be affecting health care system productivity and patient quality of care. Further, interest in whether or not information technology (IT) investments show an increase in business value has increased…

  2. Assessing Factors Affecting Physician's Intention to Adopt Biometric Authentication Technology in Electronic Medical Records

    ERIC Educational Resources Information Center

    Corazao, Cesar E.

    2014-01-01

    The Health Insurance Portability and Accountability Act of 1996 (HIPAA) regulated the privacy and security of patient information. Since HIPPA became a law, hospital operators have struggled to comply fully with its security and privacy provisions. The proximity-based biometric authentication (PBBA) technology evolved in last decade to help…

  3. Secretly Recording the Police: The Confluence of Communication, Culture, and Technology in the Public Sphere

    ERIC Educational Resources Information Center

    Schaefer, Zachary A.

    2012-01-01

    Mobile communication technologies have changed the way that police do their job. Since the Rodney King beating outside of Los Angeles in 1991, literally thousands of police brutality videos have surfaced on the internet that document perceived acts of violence carried out against seemingly defenseless perpetrators. Police organizations throughout…

  4. Unintended Consequences: New Materialist Perspectives on Library Technologies and the Digital Record

    ERIC Educational Resources Information Center

    Manoff, Marlene

    2013-01-01

    Digital technology has irrevocably altered the nature of the archive. Drawing on materialist critiques and the evolving field of media archaeology, this essay explores new strategies for understanding the implications of computer networks in libraries. Although a significant portion of the contemporary literature within Library and Information…

  5. Secretly Recording the Police: The Confluence of Communication, Culture, and Technology in the Public Sphere

    ERIC Educational Resources Information Center

    Schaefer, Zachary A.

    2012-01-01

    Mobile communication technologies have changed the way that police do their job. Since the Rodney King beating outside of Los Angeles in 1991, literally thousands of police brutality videos have surfaced on the internet that document perceived acts of violence carried out against seemingly defenseless perpetrators. Police organizations throughout…

  6. Correlationally Assessing the Relationship of Information Technology Investments in Electronic Medical Records to Business Value

    ERIC Educational Resources Information Center

    Richardson, Daniel J.

    2009-01-01

    The lag in information exchange and assimilation adoption experienced by modern primary care physicians in the conduct of evidence based medicine may be affecting health care system productivity and patient quality of care. Further, interest in whether or not information technology (IT) investments show an increase in business value has increased…

  7. Assessing Factors Affecting Physician's Intention to Adopt Biometric Authentication Technology in Electronic Medical Records

    ERIC Educational Resources Information Center

    Corazao, Cesar E.

    2014-01-01

    The Health Insurance Portability and Accountability Act of 1996 (HIPAA) regulated the privacy and security of patient information. Since HIPPA became a law, hospital operators have struggled to comply fully with its security and privacy provisions. The proximity-based biometric authentication (PBBA) technology evolved in last decade to help…

  8. Unintended Consequences: New Materialist Perspectives on Library Technologies and the Digital Record

    ERIC Educational Resources Information Center

    Manoff, Marlene

    2013-01-01

    Digital technology has irrevocably altered the nature of the archive. Drawing on materialist critiques and the evolving field of media archaeology, this essay explores new strategies for understanding the implications of computer networks in libraries. Although a significant portion of the contemporary literature within Library and Information…

  9. Use of Laser Scanning Technology to Obtain As-Built Records of Historic Covered Bridges

    Treesearch

    Robert J. Ross; Brian K. Brashaw; Samuel J. Anderson

    2012-01-01

    Covered bridges are part of the fabric of American history. Although much effort is expended to preserve these structures, many are lost forever. The National Park Service’s Historic American Engineering Record (HAER) has efforts under way to document historic structures. Their Level I documentation is defined in the Secretary of the Interior’s Standards and Guidelines...

  10. Standardized UXO Technology Demonstration Site Moguls Scoring Record Number 581 (G-TEK Australia PTY Limited)

    DTIC Science & Technology

    2005-06-01

    Electronics Warmup for 5 Minutes: Allows for thermal stabilization of electronics. Record Relative Sensor Position (1- cm Accuracy): Documents relative...generally deeper than 1 meter. An X-ray diffraction analysis on four soil samples indicated a basic mineralogy of quartz, calcite , mica, feldspar...the feature introduced in each scenario has a degrading effect on the performance of the sensor system. However, any modifications in the UXO sensor

  11. Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd, C.; Ho, Fat Duen

    2006-01-01

    All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

  12. [New technologies and nursing. Use and perception of primary health care nurses about electronic health record].

    PubMed

    Galimany Masclans, Jordi; Garrido Aguilar, Eva; Roca Roger, Montse; Girbau García, M Rosa

    2012-09-01

    To analyze the nurses make use of electronic health records (EHR) and assess their perception of it. A descriptive cross-sectional observational study was conducted in 2010 analyzing the nurses' perceptions of adult and pediatric consultations of primary health care teams in Baix Llobregat (Catalonia) in which the EHR is used. The study variables were: registration of care, continuity of care, training, usability and sociodemographic composition of the sample. The statistical analysis was descriptive. Nurses agree that EHR provides "continuity of care" in relation to nursing care (mean 2.03, Sd.0.83) and overall (mean 2.19, 5d.0.83). Show indifference to the "usability" of the EHR (mean 3.26, Sd.0.5), to facilitate the "record information" (mean 2.69, Sd.0.68) and the need for "training" in the use of EHR (mean 2.6, 5d.0.59). It has been found that with increasing age of the nurse, it shows more agreement that the EHR provides greater continuity of care overall. The average ratings of the continuum of care nurse, recording of information, continuity of care in general are greater the lead time using the EHR. The nurses' perceptions regarding the EHR are positive in that it provides continuity of care and to exchange information on patient health data.

  13. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cano, A.; Jiménez, D.

    2010-09-01

    We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

  14. Optical Temperature Sensor Through Upconversion Emission from the Er3+ Doped SrBi8Ti7O27 Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zou, Hua; Wang, Xusheng; Hu, Yifeng; Zhu, Xiaoqing; Sui, Yongxing; Song, Zhitang

    2016-06-01

    Er doped SrBi8Ti7O27 (SBT) ferroelectric ceramics were prepared by a solid-state reaction technique. By Er doping, the intensive green upconversion emissions were recorded under 980 nm diode laser excitation with 20 mW. The fluorescence spectrum was investigated in the temperature range of 150-580 K. By the fluorescence intensity ratio technique, the green emission band was studied as a function of temperature with a maximum sensing sensitivity of 0.0028 at 510 K. These results indicate that the Er doped SBT ferroelectric ceramics are promising multifunctional sensing materials.

  15. Integrated ferroelectric stacked MIM capacitors with 100 nF/mm(2) and 90 V breakdown as replacement for discretes.

    PubMed

    Roest, Aarnoud; Mauczok, Rüdiger; Reimann, Klaus; van Leuken-Peters, Linda; Klee, Mareike

    2009-03-01

    This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm(2) combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85 degrees C and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking of capacitors. The reliability of these ferroelectric capacitors was studied in detail with accelerated lifetime testing. The high performance of the integrated capacitors in this paper shows great potential for applications demanding high capacitance densities combined with electrostatic discharge protection.

  16. Recording and Reading Alchemy and Art-Technology in Medieval and Premodern German Recipe Collections.

    PubMed

    Neven, Sylvie

    2016-01-01

    In the Middle Ages and the premodern period knowledge of alchemical practices and materials was transmitted via collections of recipes often grouped concomitantly with art-technological instructions. In both alchemy and chemical technology particular importance is placed on artisanal and craft practices. Both are concerned with the description of colours. Both require procedures involving precise and specifically defined actions, prescriptions and ingredients. Assuming that alchemical and artistic texts have the same textual format, this raises the question: were they produced, diffused and read by the same people? This paper investigates the authorship and the context of production behind a sample of German alchemical manuscripts dating from the fourteenth to the sixteenth century. It scrutinizes their process of production, compilation and dissemination. This paper also sheds light on the various types of marginalia, and correlates them with their diverse functions. It thus delivers significant information about the readers and users of these manuscripts.

  17. Implementation of electronic medical records requires more than new software: Lessons on integrating and managing health technologies from Mbarara, Uganda.

    PubMed

    Madore, Amy; Rosenberg, Julie; Muyindike, Winnie R; Bangsberg, David R; Bwana, Mwebesa B; Martin, Jeffrey N; Kanyesigye, Michael; Weintraub, Rebecca

    2015-12-01

    Implementation lessons: • Technology alone does not necessarily lead to improvement in health service delivery, in contrast to the common assumption that advanced technology goes hand in hand with progress. • Implementation of electronic medical record (EMR) systems is a complex, resource-intensive process that, in addition to software, hardware, and human resource investments, requires careful planning, change management skills, adaptability, and continuous engagement of stakeholders. • Research requirements and goals must be balanced with service delivery needs when determining how much information is essential to collect and who should be interfacing with the EMR system. • EMR systems require ongoing monitoring and regular updates to ensure they are responsive to evolving clinical use cases and research questions. • High-quality data and analyses are essential for EMRs to deliver value to providers, researchers, and patients.

  18. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  19. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  20. The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

  1. Health Reform in Minnesota: An Analysis of Complementary Initiatives Implementing Electronic Health Record Technology and Care Coordination

    PubMed Central

    Soderberg, Karen; Rajamani, Sripriya; Wholey, Douglas; LaVenture, Martin

    2016-01-01

    Background: Minnesota enacted legislation in 2007 that requires all health care providers in the state to implement an interoperable electronic health record (EHR) system by 2015. 100% of hospitals and 98% of clinics had adopted EHR systems by end of 2015. Minnesota’s 2008 health reform included a health care home (HCH) program, Minnesota’s patient centered medical home. By end of 2014, 43% of HCH eligible clinics were certified with 335 certified HCHs and 430 eligible but not certified clinics. Objectives: To study the association between adoption and use of EHRs in primary care clinics and HCH certification, including use of clinical decision support tools, patient registries, electronic exchange of patient information, and availability of patient portals. Methods: Study utilized data from the 2015 Minnesota Health Information Technology Clinic Survey conducted annually by the Minnesota Department of Health. The response rate was 80% with 1,181 of 1,473 Minnesota clinics, including 662 HCH eligible primary care clinics. The comparative analysis focused on certified HCHs (311) and eligible but not certified clinics (351). Results: HCH clinics utilized the various tools of EHR technology at a higher rate than non-HCH clinics. This greater utilization was noted across a range of functionalities: clinical decision support, patient disease registries, EHR to support quality improvement, electronic exchange of summary care records and availability of patient portals. HCH certification was significant for clinical decision support tools, registries and quality improvement. Conclusions: HCH requirements of care management, care coordination and quality improvement can be better supported with EHR technology, which underscores the higher rate of utilization of EHR tools by HCH clinics. Optimizing electronic exchange of health information remains a challenge for all clinics, including HCH certified clinics. This research presents the synergy between complementary

  2. Reviewing the benefits and costs of electronic health records and associated patient safety technologies.

    PubMed

    Menachemi, Nir; Brooks, Robert G

    2006-06-01

    In the current paper, we describe the challenges in measuring return on investment (ROI) and review published ROI studies on health IT. In addition, given the absence of a robust ROI literature base, we review the general benefits and potential costs of various health IT applications including electronic health records (EHRs), computerized physicians order entry (CPOE) systems, and clinical decision support systems (CDSS). We conclude that articles examining these benefits are much more common than studies examining ROI itself. This trend suggests the early stage of this knowledge base. Additional research utilizing broader perspectives and multidisciplinary techniques will be needed before a better understanding of ROI from health IT is achieved.

  3. Metal-Organic Coordination Complexes Serve the Electronic Industry as Low-Value Dielectric Constant Ferroelectric Material

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Kotru, P. N.

    2017-10-01

    Single crystals of praseodymium tartrate dihydrate possessing excellent ferroelectric, non-linear optical (NLO) properties and exhibiting remarkably flat habit faces are successfully grown by gel technique. The most predominant habit face is identified to be {101}. The dielectric behaviour recorded on {101} planes of single crystals exhibit a dielectric anomaly at 245°C, revealing a ferroelectric transition which is supported by thermal and polarisation versus electric field studies. The optical measurement leads to a band gap of 5.13 eV which is shown to be in good agreement with the studies of high-resolution x-ray diffraction (HRXRD), transport properties and NLO behaviour of the material. Absence of grain boundaries, thermal stability, ferroelectric and NLO behaviour supports the grown single crystal to find its place in microelectronic industry as a multifunctional material.

  4. Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

    NASA Astrophysics Data System (ADS)

    Ota, Hiroyuki; Migita, Shinji; Hattori, Junichi; Fukuda, Koichi; Toriumi, Akira

    2017-04-01

    In this paper, we discuss the subthreshold operation of fully depleted silicon-on-insulator FETs (SOI-FETs) and FinFETs, with embedded ferroelectric negative-capacitance gate insulators, using technology computer-aided design simulations. SOI-FETs with ultrathin buried-oxide layers and appropriate workfunctions for bottom electrodes are found to be more preferable to attain steep subthreshold swings lesser than 60 mV/decade, because SOI-FETs can effectively enable a voltage drop in the ferroelectric layer, even though the degree of matching of the depletion capacitance and the ferroelectric gate insulator capacitance is almost the same in SOI-FETs and FinFETs. These results give a novel insight into how the subthreshold swing can be improved in ferroelectric-gate MOSFETs.

  5. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    DTIC Science & Technology

    2016-04-19

    ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on...addressing a key obstruction towards the goal of memory devices both written to and read out by light. Page 13 of 21   Acknowledgements Portions

  6. Giant Electroresistive Ferroelectric Diode on 2DEG

    PubMed Central

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-01-01

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

  7. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  8. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

  9. Ferroelectric Diodes with Charge Injection and Trapping

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Fan, Hua; Lu, Zengxing; Li, Peilian; Huang, Zhifeng; Tian, Guo; Yang, Lin; Yao, Junxiang; Chen, Chao; Chen, Deyang; Yan, Zhibo; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

    2017-01-01

    Ferroelectric diodes with polarization-modulated Schottky barriers are promising for applications in resistive switching (RS) memories. However, they have not achieved satisfactory performance reliability as originally hoped. The physical origins underlying this issue have not been well studied, although they deserve much attention. Here, by means of scanning Kelvin probe microscopy we show that the electrical poling of ferroelectric diodes can cause significant charge injection and trapping besides polarization switching. We further show that the reproducibility and stability of switchable diode-type RS behavior are significantly affected by the interfacial traps. A theoretical model is then proposed to quantitatively describe the modifications of Schottky barriers by charge injection and trapping. This model is able to reproduce various types of hysteretic current-voltage characteristics as experimentally observed. It is further revealed that the charge injection and trapping can significantly modify the electroresistance ratio, RS polarity, and high- or low-resistance states initially defined by the polarization direction. Several approaches are suggested to suppress the effect of charge injection and trapping so as to realize high-performance polarization-reversal-induced RS. This study, therefore, reveals the microscopic mechanisms for the RS behavior comodulated by polarization reversal and charge trapping in ferroelectric diodes, and also provides useful suggestions for developing reliable ferroelectric RS memories.

  10. Ferroelectrics under the Synchrotron Light: A Review

    PubMed Central

    Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

    2015-01-01

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

  11. A Model for Ferroelectric Phase Shifters

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Qureshi, A. Haq

    2000-01-01

    Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

  12. Ferroelectric control of a Mott insulator

    PubMed Central

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E.; Barthélémy, Agnès; Bibes, Manuel

    2013-01-01

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices. PMID:24089020

  13. Size Effect in Ferroelectric Long Cylinders

    NASA Astrophysics Data System (ADS)

    Wang, Yuguo; Zhang, Peilin; Wang, Chunlei; Zhong, Weilie; N, Napp; D, R. Tilly

    1995-02-01

    The Curie temperature and polarization in a ferroelectric cylinder with infinite length have been examined using Landau free energy expansion. The Curie temperature and polarization decrease with decreasing cylinder diameter for the positive extrapolation length, and reach zero at the critical size. For negative extrapolation length, both Curie temperature and polarization increase with decreasing cylinder diameter.

  14. Ferroelectrics under the Synchrotron Light: A Review.

    PubMed

    Fuentes-Cobas, Luis E; Montero-Cabrera, María E; Pardo, Lorena; Fuentes-Montero, Luis

    2015-12-30

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO₃ perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure-function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

  15. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  16. Quantum criticality in a uniaxial organic ferroelectric

    NASA Astrophysics Data System (ADS)

    Rowley, S. E.; Hadjimichael, M.; Ali, M. N.; Durmaz, Y. C.; Lashley, J. C.; Cava, R. J.; Scott, J. F.

    2015-10-01

    Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130 K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail and was found to persist up to temperatures of at least 30-40 K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as 1/T 3close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as 1/T 2 as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipole moments in the TSCC family of crystals. Interestingly, we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally, we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.

  17. A hybrid ferroelectric-flash memory cells

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  18. Ferroelectric Devices Emit Charged Particles and Radiation

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Felsteiner, Joshua; Karsik, Yakov

    2005-01-01

    Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

  19. Thermotropic phase boundaries in classic ferroelectrics.

    PubMed

    Lummen, Tom T A; Gu, Yijia; Wang, Jianjun; Lei, Shiming; Xue, Fei; Kumar, Amit; Barnes, Andrew T; Barnes, Eftihia; Denev, Sava; Belianinov, Alex; Holt, Martin; Morozovska, Anna N; Kalinin, Sergei V; Chen, Long-Qing; Gopalan, Venkatraman

    2014-01-01

    High-performance piezoelectrics are lead-based solid solutions that exhibit a so-called morphotropic phase boundary, which separates two competing phases as a function of chemical composition; as a consequence, an intermediate low-symmetry phase with a strong piezoelectric effect arises. In search for environmentally sustainable lead-free alternatives that exhibit analogous characteristics, we use a network of competing domains to create similar conditions across thermal inter-ferroelectric transitions in simple, lead-free ferroelectrics such as BaTiO3 and KNbO3. Here we report the experimental observation of thermotropic phase boundaries in these classic ferroelectrics, through direct imaging of low-symmetry intermediate phases that exhibit large enhancements in the existing nonlinear optical and piezoelectric property coefficients. Furthermore, the symmetry lowering in these phases allows for new property coefficients that exceed all the existing coefficients in both parent phases. Discovering the thermotropic nature of thermal phase transitions in simple ferroelectrics thus presents unique opportunities for the design of 'green' high-performance materials.

  20. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-16

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  1. Intrinsic ferroelectric switching from first principles

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.

    2016-06-01

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  2. Patients welcome the Sickle Cell Disease Mobile Application to Record Symptoms via Technology (SMART).

    PubMed

    Shah, Nirmish; Jonassaint, Jude; De Castro, Laura

    2014-01-01

    The widespread use of mobile phones among patients provides a unique opportunity for the development of mobile health intervention designed specifically for sickle cell disease, which will improve self-management as well as health care delivery. Our objective was to determine the receptiveness of patients with sickle cell disease to technology and a mobile application (app) designed for sickle cell disease. Phase I included 100 patients who completed a survey inquiring about receptiveness to technology and use of mobile devices to self-manage and communicate with providers. Phase II surveyed 17 additional patients who tested a newly developed sickle cell disease app, to report its usability and utility. In Phase I, on a 0-10 Likert scale where 0 is not comfortable, and 10 is extremely comfortable, 87.0% of participants reported >5 comfort level using a mobile device for health care management. Participants were comfortable with texting (81.0%) and emailing (77.0%) but not with social media (40.0%). Most participants (84.0%) owned computer devices (desktops, laptops, tablets, or iPads), and 92.0% owned mobile devices. In Phase II, participants reported that the app tested was useful to track pain (88.0%), and 94.0% reported that it was easy to use, practical, and useful for health self-management. All reported that the app was useful to help one communicate with providers. Following the use of our app, patients found it an extremely valuable tool for tracking pain, health management, and communicating with providers. We conclude that mobile technology might provide an appropriate venue for sickle cell disease healthcare management.

  3. Direct observations of polarization reversal process in ferroelectric thin films using high speed piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Premnath, Ramesh Nath

    Ferroelectric thin films have been widely implicated for use in future ultra-high-density memory devices, using atomic force microscopy (AFM) related techniques for the read/write operations of ferroelectric memory media where formation of a single domain structure with a defined polarization direction acts as a distinct memory bit. Therefore, it is important to understand the mechanisms and kinetics involved in the polarization switching process, which includes the nucleation and growth of ferroelectric domains at the nanoscale. In recent years, the piezoresponse force microscopy (PFM) technique has been widely been used to image, characterize and modify the domain structures in ferroelectric films with this spatial resolution. However, operating speeds for PFM (and AFM in general) remain a continuing limitation for imaging dynamic processes such as domain switching and read/write operations. A simple method to increase PFM characterization speeds by several orders of magnitude is presented here based on standard commercial equipment and AFM probes. Essentially, an AC voltage at a high resonance frequency is applied to a conducting AFM tip, which is in contact with a ferroelectric surface. The tip is rapidly rastered across a surface without force feedback, while the amplitude and phase of the high frequency resonances are detected with a lock-in amplifier. Although the topography is not reliably recorded, stable contrast related to ferroelectric properties is accurately mapped due to the relative insensitivity of many dynamic AFM contrast mechanisms to variations in repulsive contact forces. Images with nanoscale contrast of ferroelectric domains are presented, acquired at complete frame rates as low as 6 seconds per 256x256 pixel image. The mechanism and kinetics involved in the dynamic domain switching process of PZT thin films are therefore uniquely presented with nanoscale and nanosecond resolution. It was found that domain dynamics processes are governed by

  4. The origin of ferroelectricity in Hf1-xZrxO2: A computational investigation and a surface energy model

    NASA Astrophysics Data System (ADS)

    Materlik, R.; Künneth, C.; Kersch, A.

    2015-04-01

    The structural, thermal, and dielectric properties of the ferroelectric phase of HfO2, ZrO2, and Hf0.5Zr0.5O2 (HZO) are investigated with carefully validated density functional computations. We find that the free bulk energy of the ferroelectric orthorhombic Pca21 phase is unfavorable compared to the monoclinic P21/c and the orthorhombic Pbca phase for all investigated stoichiometries in the Hf1-xZrxO2 system. To explain the existence of the ferroelectric phase in nanoscale thin films, we explore the Gibbs/Helmholtz free energies as a function of stress and film strain and find them unlikely to become minimal in HZO films for technological relevant conditions. To assess the contribution of surface energy to the phase stability, we parameterize a model, interpolating between existing data, and find the Helmholtz free energy of ferroelectric grains minimal for a range of size and stoichiometry. From the model, we predict undoped HfO2 to be ferroelectric for a grain size of about 4 nm and epitaxial HZO below 5 nm. Furthermore, we calculate the strength of an applied electric field necessary to cause the antiferroelectric phase transformation in ZrO2 from the P42/nmc phase as 1 MV/cm in agreement with experimental data, explaining the mechanism of field induced phase transformation.

  5. The development and design of an electronic patient record using open source web-based technology.

    PubMed

    Syed-Mohamad, Sharifa Mastura; Ali, Siti Hawa; Mat-Husin, Mohd Nazri

    2010-01-01

    This paper describes the method used to develop the One Stop Crisis Centre (OSCC) Portal, an open source web-based electronic patient record system (EPR) for the One Stop Crisis Center, Hospital Universiti Sains Malaysia (HUSM) in Kelantan, Malaysia. Features and functionalities of the system are presented to demonstrate the workflow. Use of the OSCC Portal improved data integration and data communication and contributed to improvements in care management. With implementation of the OSCC portal, improved coordination between disciplines and standardisation of data in HUSM were noticed. It is expected that this will in turn result in improved data confidentiality and data integrity. The collected data will also be useful for quality assessment and research. Other low-resource centers with limited computer hardware and access to open-source software could benefit from this endeavour.

  6. Manganese incorporation into ferroelectric lead titanate

    NASA Astrophysics Data System (ADS)

    Stoupin, Stanislav

    Substitution with 3d magnetic transition elements in ABO 3 ferroelectric perovskite host media is widely utilized to produce relaxor ferroelectrics. Many resulting solid solutions exhibit magnetoelectric properties affected by concentration levels of the introduced magnetic ions. For conventional material preparation techniques such as firing of mechanically mixed oxides, incorporation is often limited by 5 mol% concentration level. Doping at higher concentrations requires introduction of other substituents to compensate charge within the unit cell to promote formation of the perovskite phase. In contrast, molecular mixing of precursor materials at the initial phase of preparation procedure offers an advantage of achieving higher incorporation levels of the 3d elements without additional charge-compensating ions. Presented in this thesis is a new sol-gel procedure utilized for high level incorporation of 3d magnetic ions into ferroelectric lead titanate. The technique was applied to produce PbTi1-xMnxO 3 solid solution, a perovskite system promising for high degree of magnetoelectric coupling. Concentration dependent studies were performed to characterize structural, thermal, ferroelectric and magnetic properties of the material. The solubility limit of Mn has been found to be 20 mol% and the material remains tetragonally distorted. X-ray Absorption Spectroscopy confirms that local structural environment of Mn, Ti, and Pb is consistent with tetragonal symmetry of the unit cell. Increase in Mn concentration leads to reduction in melting point, broadening of the ferroelectric transition, reduction of the transition temperature and increase in dielectric constant of the material. At the solubility limit the system was found to be ferromagnetic below 50 K.

  7. Interaction of Terahertz Radiation with Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nelson, Keith

    2007-03-01

    Ferroelectric crystals have long been used as acoustic transducers and receivers. An extensive toolset has been developed for MHz-frequency acoustic wave generation, control, guidance, and readout. In recent years, an analogous toolset has been developed for terahertz wave transduction and detection. Femtosecond optical pulses irradiate ferroelectric crystals to generate responses in the 0.1-5 THz frequency range that are admixtures of electromagnetic and polar lattice vibrational excitations called phonon-polaritons. Spatiotemporal femtosecond pulse shaping may be used to generate additional optical pulses that arrive at specified times and sample locations for control and manipulation of the THz waves. Femtosecond laser machining may be used for fabrication of waveguides, resonators, and other structures that are integrated into the ferroelectric host crystal. Finally, real-space imaging of the THz fields can be executed with variably delayed femtosecond probe pulses, permitting direct visualization of THz wave spatial and temporal evolution. This ``polaritonics'' toolset enables multiplexed generation of arbitrary THz waveforms and use of the waveforms within the ferroelectric host crystal or after projection into free space or an adjacent medium. The polaritonics platform will be reviewed and several new developments and applications will be presented. These include spectroscopy of relaxor ferroelectrics, whose temperature-dependent dielectric responses in the GHz-THz regime reveal complex polarization dynamics on well separated fast and slow time scales; direct measurement of phonon-polariton lattice vibrational displacements through femtosecond time-resolved x-ray diffraction; generation of high polariton field amplitudes and pulse energies; use of large-amplitude polariton waves to drive nonlinear lattice vibrational responses; and enhancement of optical-to-THz conversion efficiency through a pseudo-phase-matching approach that circumvents the very large

  8. Switchable and Tunable Bulk Acoustic Wave Devices Based on Ferroelectric Material

    NASA Astrophysics Data System (ADS)

    Mansour, Almonir

    The explosive development of personal communications systems, navigation, satellite communications as well as personal computer and data processing systems together with the constant demand for higher speeds and larger bandwidths has driven fabrication technology to its limits. This, in turn, necessitates the development of novel functional materials for the fabrication of devices with superior performance and higher capacity at reduced manufacturing costs. Ferroelectric materials such as barium strontium titanate (BST) and strontium titanium oxide (STO) have received more attention by researchers and industry because of their field-induced piezoelectric property. This property gives these types of ferroelectric materials the ability to be switchable and tunable in the presence of an electric field. These features have allowed the ferroelectric materials to be used in many applications such as non-volatile memory and DRAMs, sensors, pyroelectric detectors, and tunable microwave devices. Therefore, with the ever increasing complexity in RF front-end receivers, and the demand for services (which in turn requires more functionalities), ferroelectric bulk acoustic wave (BAW) resonators and filters that are intrinsically switchable and tunable promise to reduce the size and complexity of component parts. In this work, we present the design, fabrication and experimental evaluation of switchable and tunable thin film bulk acoustic wave (BAW) resonators, filters and duplexers for radio frequency (RF) applications. The switchability and tunability of these devices come from utilizing the electrostrictive effect of ferroelectric materials such as barium strontium titanate (BST) with the application of an external DC-bias voltage. The BAW resonators, filters and duplexers in this work were fabricated on different substrates as solidly mounted resonator (SMR) structure with number of periodic layers of silicon dioxide and tantalum oxide as a Bragg reflector in order to

  9. Changes to the electronic health records market in light of health information technology certification and meaningful use

    PubMed Central

    Yoon, Jangho; Bossak, Brian H

    2013-01-01

    Background Health information technology (HIT) certification and meaningful use are interventions encouraging the adoption of electronic health records (EHRs) in the USA. However, these initiatives also constitute a significant intervention which will change the structure of the EHR market. Objective To describe quantitatively recent changes to both the demand and supply sides of the EHR market. Materials and methods A cohort of 3447 of hospitals from the HIMSS Analytics Database (2006–10) was created. Using hospital referral regions to define the local market, we determined the percentage of hospitals using paper records, the number of vendors, and local EHR vendor competition using the Herfindahl–Hirschman Index. Changes over time were assessed using a series of regression equations and geographic information systems analyses. Results Overall, there was movement away from paper records, upward trends in the number of EHR vendors, and greater competition. However, changes differed according to hospital size and region of the country. Changes were greatest for small hospitals, whereas competition and the number of vendors did not change dramatically for large hospitals. Discussion The EHR market is changing most dramatically for those least equipped to handle broad technological transformation, which underscores the need for continued targeted support. Furthermore, wide variations across the nation indicate a continued role for states in the support of EHR utilization. Conclusion The structure of the EHR market is undergoing substantial changes as desired by the proponents and architects of HIT certification and meaningful use. However, these transformations are not uniform for all hospitals or all the country. PMID:22917839

  10. Review of laser-based applications advancing magnetic-recording hard-disk-drive technology (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Singh, Gurinder P.; Baumgart, Peter; Baugh, Eric; Poon, Chie; Strand, Timothy

    2005-04-01

    Laser-based technologies have played an important role in manufacturing of hard disk drives. The applications include disk texturing, precision bending of the suspension, precision adjust of the shape of the slider carrying the magnetic read/write head and protection against electrostatic discharge (ESD) in the read/write heads. Disk texturing allows one to reduce slider/disk stiction during contact by producing bumps only a few nanometers high and a few microns in diameter at the landing zone of the disk. Laser bending of the suspension allows one to precisely control gram load, the pre-load force with which the slider is pushed towards the disk, as well as the pitch and roll static attitudes of the slider, which strongly influence its flying characteristics. Laser crown adjust helps control slider flatness to within a few nanometers, with high precision and predictability. These technologies allow one to reduce both the mean and the tolerance of slider/disk spacing, thus effectively enabling higher magnetic recording densities. Laser technology helps to protect the sensitive magnetic read head against electrostatic discharge by allowing one to put an electrical short on the head during most of the part's handling, then removing it using a sharply focussed laser beam during final stages of drive assembly. Laser technology, with its ability to process small areas with precision positioning, being contact free and hence largely contamination free and being able reach areas with optical fibers not easily accessible by mechanical means is ideally suited for these manufacturing processes. In this paper we review the physical mechanisms underlying these technologies and possible future applications of lasers in disk drive manufacturing.

  11. Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

    NASA Astrophysics Data System (ADS)

    Tyunina, Marina; Yao, Lide; Chvostova, Dagmar; Dejneka, Alexandr; Kocourek, Tomas; Jelinek, Miroslav; Trepakov, Vladimir; van Dijken, Sebastiaan

    2015-04-01

    Perovskite-type ferroelectric (FE) crystals are wide bandgap materials with technologically valuable optical and photoelectric properties. Here, versatile engineering of electronic transitions is demonstrated in FE nanofilms of KTaO3, KNbO3 (KNO), and NaNbO3 (NNO) with a thickness of 10-30 unit cells. Control of the bandgap is achieved using heteroepitaxial growth of new structural phases on SrTiO3 (001) substrates. Compared to bulk crystals, anomalous bandgap narrowing is obtained in the FE state of KNO and NNO films. This effect opposes polarization-induced bandgap widening, which is typically found for FE materials. Transmission electron microscopy and spectroscopic ellipsometry measurements indicate that the formation of higher-symmetry structural phases of KNO and NNO produces the desirable red shift of the absorption spectrum towards visible light, while simultaneously stabilizing robust FE order. Tuning of optical properties in FE films is of interest for nanoscale photonic and optoelectronic devices.

  12. A Role for Semantic Web Technologies in Patient Record Data Collection

    NASA Astrophysics Data System (ADS)

    Ogbuji, Chimezie

    Business Process Management Systems (BPMS) are a component of the stack of Web standards that comprise Service Oriented Architecture (SOA). Such systems are representative of the architectural framework of modern information systems built in an enterprise intranet and are in contrast to systems built for deployment on the larger World Wide Web. The REST architectural style is an emerging style for building loosely coupled systems based purely on the native HTTP protocol. It is a coordinated set of architectural constraints with a goal to minimize latency, maximize the independence and scalability of distributed components, and facilitate the use of intermediary processors.Within the development community for distributed, Web-based systems, there has been a debate regarding themerits of both approaches. In some cases, there are legitimate concerns about the differences in both architectural styles. In other cases, the contention seems to be based on concerns that are marginal at best. In this chapter, we will attempt to contribute to this debate by focusing on a specific, deployed use case that emphasizes the role of the Semantic Web, a simple Web application architecture that leverages the use of declarative XML processing, and the needs of a workflow system. The use case involves orchestrating a work process associated with the data entry of structured patient record content into a research registry at the Cleveland Clinic's Clinical Investigation department in the Heart and Vascular Institute.

  13. Data collection in a live mass casualty incident simulation: automated RFID technology versus manually recorded system.

    PubMed

    Ingrassia, Pier Luigi; Carenzo, Luca; Barra, Federico Lorenzo; Colombo, Davide; Ragazzoni, Luca; Tengattini, Marco; Prato, Federico; Geddo, Alessandro; Della Corte, Francesco

    2012-02-01

    To demonstrate the applicability and the reliability of a radio frequency identification (RFID) system to collect data during a live exercise. A rooftop collapse of a crowded building was simulated. Fifty-three volunteers were trained to perform as smart victims, simulating clinical conditions, using dynamic data cards, and capturing delay times and triage codes. Every victim was also equipped with a RFID tag. RFID antenna was placed at the entrance of the advanced medical post (AMP) and emergency department (ED) and recorded casualties entering the hospital. A total of 12 victims entered AMP and 31 victims were directly transferred to the ED. 100% (12 of 12 and 31 of 31) of the time cards reported a manually written hospital admission time. No failures occurred in tag reading or data transfers. A correlation analysis was performed between the two methods plotting the paired RFID and manual times and resulted in a r=0.977 for the AMP and r=0.986 for the ED with a P value of less than 0.001. We confirmed the applicability of RFID system to the collection of time delays. Its use should be investigated in every aspect of data collection (triage, treatments) during a disaster exercise.

  14. Health care information technology in rural America: electronic medical record adoption status in meeting the national agenda.

    PubMed

    Bahensky, James A; Jaana, Mirou; Ward, Marcia M

    2008-01-01

    Continuing is a national political drive for investments in health care information technology (HIT) that will allow the transformation of health care for quality improvement and cost reduction. Despite several initiatives by the federal government to spur this development, HIT implementation has been limited, particularly in the rural market. The status of technology use in the transformation effort is reviewed by examining electronic medical records (EMRs), analyzing the existing rural environment, identifying barriers and factors affecting their development and implementation, and recommending needed steps to make this transformation occur, particularly in rural communities. A review of the literature for HIT in rural settings indicates that very little progress has been made in the adoption and use of HIT in rural America. Financial barriers and a large number of HIT vendors offering different solutions present significant risks to rural health care providers wanting to invest in HIT. Although evidence in the literature has demonstrated benefits of adopting HIT such as EMRs, important technical, policy, organizational, and financial barriers still exist that prevent the implementation of these systems in rural settings. To expedite the spread of HIT in rural America, federal and state governments along with private payers, who are important beneficiaries of HIT, must make difficult decisions as to who pays for the investment in this technology, along with driving standards, simplifying approaches for reductions in risk, and creating a workable operational plan.

  15. Phonon localization drives polar nanoregions in a relaxor ferroelectric.

    PubMed

    Manley, M E; Lynn, J W; Abernathy, D L; Specht, E D; Delaire, O; Bishop, A R; Sahul, R; Budai, J D

    2014-04-10

    Relaxor ferroelectrics exemplify a class of functional materials where interplay between disorder and phase instability results in inhomogeneous nanoregions. Although known for about 30 years, there is no definitive explanation for polar nanoregions (PNRs). Here we show that ferroelectric phonon localization drives PNRs in relaxor ferroelectric PMN-30%PT using neutron scattering. At the frequency of a preexisting resonance mode, nanoregions of standing ferroelectric phonons develop with a coherence length equal to one wavelength and the PNR size. Anderson localization of ferroelectric phonons by resonance modes explains our observations and, with nonlinear slowing, the PNRs and relaxor properties. Phonon localization at additional resonances near the zone edges explains competing antiferroelectric distortions known to occur at the zone edges. Our results indicate the size and shape of PNRs that are not dictated by complex structural details, as commonly assumed, but by phonon resonance wave vectors. This discovery could guide the design of next generation relaxor ferroelectrics.

  16. Ferroelectric domain engineering by focused infrared femtosecond pulses

    SciTech Connect

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan; Karpinski, Pawel; Koynov, Kaloian; Wang, Bingxia; Trull, Jose; Cojocaru, Crina; Krolikowski, Wieslaw

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  17. Ferroelectric domain wall motion induced by polarized light.

    PubMed

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F

    2015-03-17

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light.

  18. Ferroelectric domain wall motion induced by polarized light

    PubMed Central

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  19. Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

    NASA Astrophysics Data System (ADS)

    Qiu, Xunlin

    2010-07-01

    Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called "ferroelectrets"), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

  20. Study of ferroelectric characteristics of diisopropylammonium bromide films

    NASA Astrophysics Data System (ADS)

    Thirmal, C.; Biswas, P. P.; Shin, Y. J.; Noh, T. W.; Giridharan, N. V.; Venimadhav, A.; Murugavel, P.

    2016-09-01

    Organic molecular ferroelectrics are highly desirable due to their numerous advantages. In the present work, a thick film of diisopropylammonium bromide organic molecular ferroelectric is fabricated on the ITO/glass substrate. The grown film shows preferential orientation along the c-axis with a ferroelectric transition at 419 K. The piezoresponse force microscopic measurements are done in a dual ac resonance tracking mode for its switching characteristics. The amplitude and phase images of the oppositely written domain patterns exhibit a clear contrast with 180° phase difference. The dynamical spectroscopic studies reveal a butterfly loop in amplitude and hysteretic character of the phase which are the expected characteristics features of ferroelectrics. In addition, the macroscopic polarization versus electric field hysteresis gives an additional proof for ferroelectric character of the film with the maximum polarization of 3.5 μC/cm2. Overall, we have successfully fabricated diisopropylammonium bromide organic films and demonstrated its room temperature ferroelectric characteristics.

  1. Wear-time recording during early Class III facemask treatment using TheraMon chip technology.

    PubMed

    Stocker, Bruce; Willmann, Jan H; Wilmes, Benedict; Vasudavan, Sivabalan; Drescher, Dieter

    2016-09-01

    Successful intervention in a developing Class III malocclusion with facemask protraction therapy depends on a patient's ability to adhere to the recommendations for duration of appliance wear. In this article, we report the introduction of a novel approach for tracking of the duration of application of a protraction facemask, with the incorporation of a "FaceMon" sensor (TheraMon, microelectronic system; MC Technology GmbH, Hargelsberg, Austria) to track wear time. A 9-year-old boy with a Class III malocclusion was successfully treated with a modified alternate rapid maxillary expansion and constriction protocol and intermittent application of a hybrid hyrax-protraction facemask combination. The average duration of wear of the facemask was measured at 10.8 hours per day. The use of an objective measuring device may have implications for the development of treatment strategies, since patient responses may be able to calibrated in relation to compliance. Copyright © 2016 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

  2. Atomic Pair Distribution Function (PDF) Analysis of Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Yoneda, Yasuhiro

    Atomic Pair Distribution Function (PDF) is a one of local structure analysis. PDF analysis is a powerful method for ferroelectrics in which domain structure exists. A deviation arises between average and local structures under the influence of the ferroelectric domain configuration. The local structure analysis of BaTiO3 and BiMg0.5Ti0.5O3 is shown as an example of application to the ferroelectric materials of PDF analysis.

  3. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  4. Long-Term Continuous Ambulatory ECG Monitors and External Cardiac Loop Recorders for Cardiac Arrhythmia: A Health Technology Assessment

    PubMed Central

    Kabali, Conrad; Xie, Xuanqian; Higgins, Caroline

    2017-01-01

    Background Ambulatory electrocardiography (ECG) monitors are often used to detect cardiac arrhythmia. For patients with symptoms, an external cardiac loop recorder will often be recommended. The improved recording capacity of newer Holter monitors and similar devices, collectively known as longterm continuous ambulatory ECG monitors, suggests that they will perform just as well as, or better than, external loop recorders. This health technology assessment aimed to evaluate the effectiveness, cost-effectiveness, and budget impact of longterm continuous ECG monitors compared with external loop recorders in detecting symptoms of cardiac arrhythmia. Methods Based on our systematic search for studies published up to January 15, 2016, we did not identify any studies directly comparing the clinical effectiveness of longterm continuous ECG monitors and external loop recorders. Therefore, we conducted an indirect comparison, using a 24-hour Holter monitor as a common comparator. We used a meta-regression model to control for bias due to variation in device-wearing time and baseline syncope rate across studies. We conducted a similar systematic search for cost-utility and cost-effectiveness studies comparing the two types of devices; none were found. Finally, we used historical claims data (2006–2014) to estimate the future 5-year budget impact in Ontario, Canada, of continued public funding for both types of longterm ambulatory ECG monitors. Results Our clinical literature search yielded 7,815 non-duplicate citations, of which 12 cohort studies were eligible for indirect comparison. Seven studies assessed the effectiveness of longterm continuous monitors and five assessed external loop recorders. Both types of devices were more effective than a 24-hour Holter monitor, and we found no substantial difference between them in their ability to detect symptoms (risk difference 0.01; 95% confidence interval −0.18, 0.20). Using GRADE for network meta-analysis, we evaluated the

  5. Ferroelectric nanostructure having switchable multi-stable vortex states

    DOEpatents

    Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  6. A ferroelectric model for the low emissivity highlands on Venus

    NASA Technical Reports Server (NTRS)

    Shepard, Michael K.; Arvidson, Raymond E.; Brackett, Robert A.; Fegley, Bruce, Jr.

    1994-01-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (10(exp 5)) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  7. A ferroelectric model for the low emissivity highlands on Venus

    NASA Astrophysics Data System (ADS)

    Shepard, M. K.; Arvidson, R. E.; Brackett, R. A.; Fegley, B.

    1994-03-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (105) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  8. Re-entrant relaxor ferroelectricity of methylammonium lead iodide

    DOE PAGES

    Guo, Haiyan; Liu, Peixue; Zheng, Shichao; ...

    2016-09-24

    In this paper, we have performed a piezoresponse force microscopy (PFM) study on methylammonium lead iodide (MAPbI3) thin films in normal (non-resonance, non-band-excitation) contact mode. In contrast to the ferroelectric Pb0.76Ca0.24TiO3 (PCT) control sample, a typical ferroelectric response was not observed. However, a nonlinear electric field dependence of the local PFM amplitude was found in MAPbI3, similar to PCT. An analysis combining results on structure, dielectric dispersion, and weak ferroelectricity demonstrates that MAPbI3 is actually a re-entrant relaxor ferroelectric which, upon cooling, enters into a relaxor phase below its ferroelectric phase transition at ~327 K, due to the balance betweenmore » the long range ferroelectric order and structural methylammonium group orientational disorder. The ferroelectricity at room temperature is compromised due to the re-entrant relaxor behavior, causing the poor polarization retention or weak ferroelectricity. Finally, our findings essentially conciliate the conflicting experimental results on MAPbI3's ferroelectricity and are beneficial both for basic understanding as well as for device applications.« less

  9. Re-entrant relaxor ferroelectricity of methylammonium lead iodide

    SciTech Connect

    Guo, Haiyan; Liu, Peixue; Zheng, Shichao; Zeng, Shixian; Liu, Na; Hong, Seungbum

    2016-09-24

    In this paper, we have performed a piezoresponse force microscopy (PFM) study on methylammonium lead iodide (MAPbI3) thin films in normal (non-resonance, non-band-excitation) contact mode. In contrast to the ferroelectric Pb0.76Ca0.24TiO3 (PCT) control sample, a typical ferroelectric response was not observed. However, a nonlinear electric field dependence of the local PFM amplitude was found in MAPbI3, similar to PCT. An analysis combining results on structure, dielectric dispersion, and weak ferroelectricity demonstrates that MAPbI3 is actually a re-entrant relaxor ferroelectric which, upon cooling, enters into a relaxor phase below its ferroelectric phase transition at ~327 K, due to the balance between the long range ferroelectric order and structural methylammonium group orientational disorder. The ferroelectricity at room temperature is compromised due to the re-entrant relaxor behavior, causing the poor polarization retention or weak ferroelectricity. Finally, our findings essentially conciliate the conflicting experimental results on MAPbI3's ferroelectricity and are beneficial both for basic understanding as well as for device applications.

  10. Organic and inorganic relaxor ferroelectrics with giant electrocaloric effect

    NASA Astrophysics Data System (ADS)

    Lu, S. G.; Rožič, B.; Zhang, Q. M.; Kutnjak, Z.; Li, Xinyu; Furman, E.; Gorny, Lee J.; Lin, Minren; Malič, B.; Kosec, M.; Blinc, R.; Pirc, R.

    2010-10-01

    The electrocaloric effect (ECE) in inorganic thin film and organic relaxor ferroelectrics is investigated by directly measuring the ECE around room temperature. The results reveal that giant ECEs can be obtained in the high energy electron irradiated poly(vinylidene fluoride-trifluoroethylene) relaxor copolymer and in the La-doped Pb(ZrTi)O3 relaxor ceramic thin films, which are much larger than that from the normal ferroelectric counterparts. The large ECE observed, compared with normal ferroelectrics, is likely caused by the large number of disordered fluctuating polarization entities in relaxor ferroelectrics which can lead to extra entropy contributions and larger ECE.

  11. Ferroelectric domain engineering and micro-structuring of lithium niobate

    NASA Astrophysics Data System (ADS)

    Mailis, Sakellaris

    2010-11-01

    This paper discusses a number of recently developed all optical and optically assisted methods for ferroelectric domain engineering in lithium niobate and their impact on the micro-structuring of this optical ferroelectric crystal. Optical radiation is used to change the response of lithium niobate crystals to externally applied electric field encouraging or inhibiting ferroelectric domain inversion in a simultaneous or latent manner. Optically assisted poling processes have the advantage of producing ferroelectric domains with arbitrary shapes free from crystal symmetry restrictions which is very important for fabricating surface micro/nano-structures in this material.

  12. One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

    PubMed Central

    Liang, Longyue; Kang, Xueliang

    2016-01-01

    One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined. PMID:27812477

  13. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

    PubMed Central

    Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

    2016-01-01

    The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

  14. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  15. The ferroelectric analysis of LCoS

    NASA Astrophysics Data System (ADS)

    Hao, Lifang; Lin, Bin

    2010-11-01

    In order to utilize the LCoS, this paper advances a new patten liquid material which is ferroelectric liquid crystal. It has the characteristics, such as time division-style full-color display, high resolution, low voltage and high speed response. If it is used in the microdisplay, we can attain large area visual display, high open rate and high responding time. The alignment of ferroelectric liquid crystal is very complicated, so we use photo-alignment, rubbing or hybrid-alignment to determine the direction of liquid. Once the liquid layer has been fabricated, we use space parameter method to analyse the liquid layer, and we make sure the detailed optical thickness and pretilted angle.

  16. Block copolymer/ferroelectric nanoparticle nanocomposites

    NASA Astrophysics Data System (ADS)

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-08-01

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were

  17. Random electric field instabilities of relaxor ferroelectrics

    DOE PAGES

    Arce-Gamboa, Jose R.; Guzman-Verri, Gian G.

    2017-06-13

    Relaxor ferroelectrics are complex oxide materials which are rather unique to study the effects of compositional disorder on phase transitions. Here, we study the effects of quenched cubic random electric fields on the lattice instabilities that lead to a ferroelectric transition and show that, within a microscopic model and a statistical mechanical solution, even weak compositional disorder can prohibit the development of long-range order and that a random field state with anisotropic and power-law correlations of polarization emerges from the combined effect of their characteristic dipole forces and their inherent charge disorder. As a result, we compare and reproduce severalmore » key experimental observations in the well-studied relaxor PbMg1/3Nb2/3O3–PbTiO3.« less

  18. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  19. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    NASA Astrophysics Data System (ADS)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  20. Upper bounds for flexoelectric coefficients in ferroelectrics

    NASA Astrophysics Data System (ADS)

    Yudin, P. V.; Ahluwalia, R.; Tagantsev, A. K.

    2014-02-01

    Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosymmetric materials. These features make flexoelectricity of growing interest during the last decade. At the same time, the available theoretical and experimental results are rather contradictory. In particular, experimentally measured flexoelectric coefficients in some ferroelectric materials largely exceed theoretically predicted values. Here, we determine the upper limits for the magnitude of the static bulk contribution to the flexoelectric effect in ferroelectrics, the contribution which was customarily considered as the dominating one. The magnitude of the upper bounds obtained suggests that the anomalously high flexoelectric coupling documented for perovskite ceramics can hardly be attributed to a manifestation of the static bulk effect.

  1. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  2. Doping a dipole into an incipient ferroelectric: Route to relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Chaudhary, N. Vijay Prakash; Sarkar, Sagar; Sharma, Neetika; Kundu, Asish K.; Menon, Krishnakumar S. R.; Das, A.; Mahadevan, Priya; Venimadhav, A.

    2017-07-01

    Ti O2 in the rutile phase is known to be an incipient ferroelectric. Considering Nb-Cr codoping we examine if ferroelectricity can be induced at the low doping limit in T i(1 -x )(Nb0.5Cr0.5 ) xO2 (x =0.05 % , 1%, 5%, and 10%). A relaxor behavior is found in the temperature range 20-120 K which obeys the Vogel-Fulcher relation while pyrocurrent measurements confirm switching of the electric polarization. The spontaneous net polarization is doping dependent with a maximum at 1% and for doping concentrations above 5% is found to be paraelectric. Ab initio density functional theory based calculations suggest that the Nb-Cr pair behaves like a dipole and polarizes the neighboring Ti O6 octahedra, stabilizing a ferroelectric ground state akin to magnetic impurities in dilute magnetic semiconductors. At larger doping concentrations one finds that Nb-Cr clusters result in a vanishing polarization.

  3. Giant Electrocaloric Effect in Ferroelectric Polymers with Great Impact on Energy and Environment

    NASA Astrophysics Data System (ADS)

    Li, Xinyu; Qian, Xiaoshi; Gu, Haiming; Lu, Shengguo; Zhang, Qiming

    2012-02-01

    Refrigeration and air conditioning overall consume around 20% of the energy budget in developed countries which necessitates a search for new approaches to increase the energy efficiency of these cooling technologies. Cooling technologies based on the electrocaloric effect (ECE) hold great potential and promise in realizing these goals. The electrocaloric effect (ECE) refers to the change in temperature and/or entropy of a dielectric material by an applied voltage. Recently, a class of P(VDF-TrFE) based ferroelectric polymers have been discovered that provide a giant electrocaloric effect with an adiabatic temperature change of δT ˜ 20 K and an isothermal entropy change δS > 90 J/kgK at room temperature. This talk will review the earlier works in the ECE, as well as present the basic materials considerations and experimental results of the ECE in both normal and relaxor ferroelectric polymers. It will be shown he relaxor ferroelectric polymer displays a nearly flat ECE response over a broad temperature range, which is very attractive for practical cooling device applications Furthermore, we will present our recent investigation, exploiting the giant ECE in these polymers for cooling devices with compact size, high cooling power and efficiency.

  4. Block copolymer/ferroelectric nanoparticle nanocomposites.

    PubMed

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-09-21

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.

  5. Barkhausen noise in a relaxor ferroelectric.

    PubMed

    Colla, Eugene V; Chao, Lambert K; Weissman, M B

    2002-01-07

    Barkhausen noise, including both periodic and aperiodic components, is found in and near the relaxor regime of a familiar relaxor ferroelectric, PbMg(1/3)Nb(2/3)O3, driven by a periodic electric field. The temperature dependences of both the amplitude and spectral form show that the size of the coherent changes in the dipole moment shrink as the relaxor regime is entered, contrary to expectations based on some simple models.

  6. Evaluation of Ferroelectric Materials for Memory Applications

    DTIC Science & Technology

    1990-06-01

    or rhombohedral [Ref. 16: p.17]. M, ’of the materials of interest for memory applications are tetragonal, with the exception of potassium nitrate ( KNO3 ...PZT as the current favorite. Although KNO3 has many desirable properties and has been extensively studied, it is also extremely hygroscopic and has...niches where the application-specific capabilities outweigh the initially higher price . For applications where nonvolatility is required, ferroelectric

  7. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  8. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, Peter J.

    1987-01-01

    A method of electrically inducing mechanical precompression of a ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion.

  9. Ferromagnetism induced by entangled charge and orbital orderings in ferroelectric titanate perovskites

    PubMed Central

    Bristowe, N. C.; Varignon, J.; Fontaine, D.; Bousquet, E.; Ghosez, Ph.

    2015-01-01

    In magnetic materials, the Pauli exclusion principle typically drives anti-alignment between electron spins on neighbouring species resulting in antiferromagnetic behaviour. Ferromagnetism exhibiting spontaneous spin alignment is a fairly rare behaviour, but once materialized is often associated with itinerant electrons in metals. Here we predict and rationalize robust ferromagnetism in an insulating oxide perovskite structure based on the popular titanate series. In half-doped layered titanates, the combination of Jahn–Teller and oxygen breathing motions opens a band gap and creates an unusual charge and orbital ordering of the Ti d electrons. It is argued that this intriguingly intricate electronic network favours the elusive inter-site ferromagnetic (FM) ordering, on the basis of intra-site Hund's rules. Finally, we find that the layered oxides are also ferroelectric with a spontaneous polarization approaching that of BaTiO3. The concepts are general and design principles of the technologically desirable FM ferroelectric multiferroics are presented. PMID:25807180

  10. A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Miranda, Felix A.; VanKeuls, Fred W.

    1998-01-01

    A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

  11. Implementation of health information technology in Veterans Health Administration to support transformational change: telehealth and personal health records.

    PubMed

    Chumbler, Neale R; Haggstrom, David; Saleem, Jason J

    2011-12-01

    The Institute of Medicine report, Crossing the Quality Chasm, called for significant improvements in 6 elements of healthcare performance: safety, effectiveness, patient centeredness, timeliness, efficiency, and equity. To meet the changing care needs of older veterans, many of whom are trying to manage the complexities of their chronic diseases in their own homes, the Veterans Health Administration (VHA) has promoted many of the Institute of Medicine elements by implementing health information technology (health IT), such as telehealth and a personal health record (PHR). To that end, approximately 5 years ago, VHA created the Office of Care Coordination and in particular a patient-centered Care Coordination/Home Telehealth (CCHT) program, which uses telehealth technologies (eg, messaging devices) to coordinate care directly from a patient's home to help self-manage their chronic diseases. VHA has also developed a PHR, My HealtheVet, which is a secure web-based portal that provides veterans the capability to access and manage health information. This article discusses the mechanisms by which these forms of health IT have been implemented to improve access to care and improve health. For telehealth, we present the outcomes from some of the published literature. For PHRs, we outline what is known to date and future research directions. The article also examines some structural, policy-related, and organizational barriers to health IT implementation and offers suggestions for future research.

  12. Prediction of a native ferroelectric metal

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-04-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity--that is, the existence of a switchable intrinsic electric polarization--has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound.

  13. Ferroelectricity in underdoped La-based cuprates

    PubMed Central

    Viskadourakis, Z.; Sunku, S. S.; Mukherjee, S.; Andersen, B. M.; Ito, T.; Sasagawa, T.; Panagopoulos, C.

    2015-01-01

    Doping a “parent” antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2-xSrxCuO4, La2LixCu1-xO4 and La2CuO4+x. It is proposed that ferroelectricity may result from local CuO6 octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction. PMID:26486276

  14. Development of "fragility" in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, Yi-zhen; Chen, Lan; Wang, Hai-yan; Frank Zhang, X.; Fu, Jun; Xiong, Xiao-min; Zhang, Jin-xiu

    2014-02-01

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the "Super-Arrhenius (SA)" relaxation. Despite great progress in glass-forming liquids, the "fragility" property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg1/3Nb2/3)O3-x%PbTiO3 (PMN - x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the "fragility" properties of the SA relaxation in PMN - x%PT. Such fascinating issues as the mechanism of the "fragility" at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between "fragility" and ferroelectric order are investigated. Our results show that both the "fragility" of the temperature-dependent SA relaxation and ferroelectric order in the PMN - x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature Tc. A reasonable physical scenario, based on our "configurational-entropy-loss" theory and Nowick's "stress-induced-ordering" theory, was proposed.

  15. Quantum properties of charged ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Sturman, B.; Podivilov, E.; Stepanov, M.; Tagantsev, A.; Setter, N.

    2015-12-01

    We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this potential, dependencies on the ferroelectric characteristics, as well as the spatial structure and formation energy of the wall. Our description is based on the Hartree and Thomas-Fermi methods and Landau theory for the ferroelectric transitions. Changeover from a few to many quantum levels (with the electron binding energies ˜1 eV) is controlled by a single characteristic parameter. The quantum models well describe the core of the wall, whose width is typically ˜10 nm. Additionally, the walls possess pronounced long-range tails which are due to trap recharging. For the trap concentration Nt=(1017-1018) cm-3 , the tail length ℓ is of the μ m scale. On the distances much larger than ℓ the walls are electrically uncoupled from each other and the crystal faces.

  16. WFL: Microwave Applications of Thin Ferroelectric Films

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert

    2013-01-01

    We have developed a family of tunable microwave circuits, operating from X- through Ka-band, based on laser ablated BaxSr1-xTiO films on lanthanum aluminate and magnesium oxide substrates. Circuits include voltage controlled oscillators, filters, phase shifters and antennas. A review of the basic theory of operation of these devices will be presented along with measured performance. Emphasis has been on low-loss phase shifters to enable a new phased array architecture. The critical role of phase shifter loss and transient response in reflectarray antennas will be discussed. The Ferroelectric Reflectarray Critical Components Space Experiment was launched on the penultimate Space Shuttle, STS-134, in May of 2011. It included a bank of ferroelectric phase shifters with two different stoichiometries as well as ancillary electronics. The experiment package and status will be reported. In addition, unusual results of a Van der Pauw measurement involving a ferroelectric film grown on buffered high resisitivity silicon will be discussed.

  17. Influence of ferroelectric polarization on magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Mardana, A.; Ducharme, S.; Adenwalla, S.

    2010-03-01

    Thin film heterostructures of transition metal ferromagnets (FM) and polymer ferroelectrics (FE) are investigated to look for changes in the magnetic anisotropy of the FM layer that occur on switching the FE polarization (with an ensuing change in the electric field direction).[1] Samples of [Glass/ Pd (50 nm)/Co wedge (0.9-2.6nm)/ferroelectric P(VDF-TrFE) (53 nm)/Al (30nm)] are deposited via sputtering or evaporation for the metallic layers and via Langmuir-Schaefer deposition for the polymer ferroelectric. [2] Magnetic and FE properties have been characterized using the Magneto-Optical Kerr Effect (MOKE) and the pyroelectric effect. Polar and longitudinal MOKE loops are measured across the Co wedge for both positive and negative FE polarization and the difference in the two MOKE loops is ascribed to the changes in the magnetic anisotropy of the FM layer. [3] These changes are most apparent in the region where the Co undergoes a transition from in-plane to out-of-plane anisotropy. This research is supported by the NSF MRSEC through Grant No. DMR- 0820521 1. Chun-Gang Duan et al, Appl. Phys. Lett. 92, 122905 (2008) 2. A. V. Bune, et al, Nature (London) 391, 874 (1998) 3. P. F. Carcia, J.Appl. Phys. 63, 5066 (1988)

  18. Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.

    SciTech Connect

    Aggarwal, S.; Auciello, O.; Dhote, A. M.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Muller, A. H.; Ramesh, R.

    1999-06-29

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMS) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and device processes relevant to device development. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed. Direct imaging of ferroelectric domains under applied electric fields can provide valuable information to understand domain dynamics in ferroelectric films. We discuss results of piezoresponse scanning force microscopy (SFM) imaging for nanoscale studies of polarization reversal and retention loss in Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT)-based capacitors. Another powerful technique suitable for in situ, real-time characterization of film growth processes and ferroelectric film-based device operation is based on synchrotrons X-ray scattering, which is currently being implemented at Argonne National Laboratory.

  19. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    DOE PAGES

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complexmore » polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

  20. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    SciTech Connect

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; Su, Dong; Chen, Long-Qing; Huang, Guanzhong; Munroe, Paul R.; Valanoor, Nagarajan

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.

  1. Texture and anisotropy of ferroelectric bismuth titanate

    NASA Astrophysics Data System (ADS)

    Jones, Jacob Leo

    Ferroelectric bismuth titanate, Na0.5Bi4.5 Ti4O15, is a piezoelectric ceramic used as an electromechanical sensor in high temperature environments (T < 655°C). However, the piezoelectric constant, d33, is relatively low in randomly oriented ceramics. Crystallographic texturing is often employed to increase the piezoelectric constant because the spontaneous polarization axes of the grains are better aligned. This research distinguishes between the crystallographic texture induced to the grains from tape casting and crystallographic texture induced to the ferroelectric domains from electrical poling. Novel quantitative approaches describe texture of both types independently using conventional and synchrotron X-ray sources as well as time-of-flight neutron diffraction with multiple detectors. Furthermore, methods are developed to describe the combined effect of a ferroelectric texture superimposed on a paraelectric texture. Texture of the paraelectric crystallographic axes was induced by novel processing approaches. An alternative to using plate-shaped template particles was developed utilizing calcined powder. Paraelectric texture develops from particle settling and strong surface energy anisotropy during sintering. The 00l textures induced from this process are on the order of two to four multiples of a random distribution. These textures create property anisotropies between the casting plane and normal directions of 6.4 and 5.7 in piezoelectric d33 constant and remanent polarization, respectively. Texture of the ferroelectric crystallographic axes was induced by electrical poling at different temperatures and in different orientations. Ceramics with an initial paraelectric texture can exhibit greater change in the domain volume fractions during electrical poling than randomly oriented ceramics. This is demonstrated by applying novel quantitative approaches to reflection X-ray spectra from many sample directions. Because orthorhombic Na0.5Bi 4.5Ti4O15 has two

  2. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  3. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of

  4. Tunable ferroelectric meta-material phase shifter embedded inside low temperature co-fired ceramics (LTCC)

    NASA Astrophysics Data System (ADS)

    Tork, Hossam S.

    This dissertation describes electrically tunable microwave devices utilizing low temperature co-fired ceramics (LTCC) and thick film via filled with the ferroelectric materials barium strontium titanate (BST) and barium zirconate titanate (BZT). Tunable ferroelectric capacitors, zero meta-material phase shifters, and tunable meta-material phase shifters are presented. Microwave phase shifters have many applications in microwave devices. They are essential components for active and passive phased array antennas and their most common use is in scanning phased array antennas. They are used in synthetic aperture radars (SAR), low earth orbit (LEO) communication satellites, collision warning radars, and intelligent vehicle highway systems (IVHS), in addition to various other applications. Tunable ferroelectric materials have been investigated, since they offer the possibility of lowering the total cost of phased arrays. Two of the most promising ferroelectric materials in microwave applications are BST and BZT. The proposed design and implementation in this research introduce new types of tunable meta-material phase shifters embedded inside LTCC, which use BST and BZT as capacitive tunable dielectric material controlled by changing the applied voltage. This phase shifter has the advantages of meta-material structures, which produce little phase error and compensation while having the simultaneous advantage of using LTCC technology for embedding passive components that improve signal integrity (several signal lines, power planes, and ground planes) by using different processes like via filling, screen printing, laminating and firing that can be produced in compact sizes at a low cost. The via filling technique was used to build tunable BST, BZT ferroelectric material capacitors to control phase shift. Finally, The use of the proposed ferroelectric meta-material phase shifter improves phase shifter performance by reducing insertion loss in both transmitting and receiving

  5. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  6. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  7. Future Development of Dense Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.

    2001-01-01

    The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

  8. Future Development of Dense Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.

    2001-01-01

    The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

  9. Electrospinning induced ferroelectricity in poly(vinylidene fluoride) fibers

    NASA Astrophysics Data System (ADS)

    Baji, Avinash; Mai, Yiu-Wing; Li, Qian; Liu, Yun

    2011-08-01

    Poly(vinylidene fluoride) (PVDF) fibers with diameters ranging from 70 to 400 nm are produced by electrospinning and the effect of fiber size on the ferroelectric β-crystalline phase is determined. Domain switching and associated ferro-/piezo-electric properties of the electrospun PVDF fibers were also determined. The fibers showed well-defined ferroelectric and piezoelectric properties.

  10. Ferroelectric functionality in SrTiO3/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Wu, Y. Z.; Jiang, X. F.; Cai, M. Q.; Gu, L. P.; Yang, G. W.

    2013-11-01

    By the first-principles calculations, various SrTiO3/Si interface architectures have been studied in this work and the computed results showed that the stable ferroelectricity can be realized in the SrTiO3/Si system. The Si/SrO interface architecture with the Si-O configuration showed predominately the ferroelectric nature and the height of the potential barrier between the negative and positive poled states (0.77 eV per interfacial unit cell). The presence of the covalent bond between the substrate Si and O of SrO layer adjacent to the substrate Si leads to the disappearance of the electronic dipoles at the interface, and the reason is that the Si-O configuration of the Si/SrO interface architecture exhibits ferroelectric nature. In order to further understand the influence of the interfacial bonding nature on the ferroelectricity of the oxide layer, the BaTiO3/Si heterojunction with the same interface architectures also have been studied. Indeed, the Si/BaO interface architecture with the Si-O configuration showed predominately the ferroelectric nature too. Certainly, a full SrO (or BaO) layer directly grown on the substrate Si is benefit to the realization of the ferroelectric functionality in the ferroelectric-Si heterojunction. These findings are useful for the understanding of the basic physics of the ferroelectric-Si heterojunction and the silicon-based functional oxide device design.

  11. A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

    DTIC Science & Technology

    2004-01-01

    PMN-driven flextensional sonar transducer submersed in water experiences a temperature increase of approximately 40oC before equilibrium is reached [9...nonlinearities materials 1. Introduction Transducers employing relaxor ferroelectric materials are increasingly considered for applications ranging from...facilitates subsequent transducer design and model-based control implementation. A number of the initial models for the relaxor ferroelectric

  12. Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

    NASA Astrophysics Data System (ADS)

    Yau, Hei-Man; Xi, Zhongnan; Chen, Xinxin; Wen, Zheng; Wu, Ge; Dai, Ji-Yan

    2017-06-01

    Strain engineering plays a critical role in ferroelectric memories. In this work, we demonstrate dynamic strain modulation on tunneling electroresistance in a four-unit-cell ultrathin BaTi O3 metal/ferroelectric/semiconductor tunnel junction by applying mechanical stress to the device. With an extra compressive strain induced by mechanical stress, which is dynamically applied beyond the lattice mismatch between the BaTi O3 layer and the Nb :SrTi O3 substrate, the ON/OFF current ratio increases significantly up to a record high value of 107, whereas a mechanical erasing effect can be observed when a tensile stress is applied. This dynamic strain engineering gives rise to an efficient modulation of ON/OFF ratio due to the variation of BaTi O3 polarization. This result sheds light on the mechanism of electroresistance in the ferroelectric tunnel junctions by providing direct evidence for polarization-induced resistive switching, and also provides another stimulus for memory state operation.

  13. Ferroelectric domain structure of Pb(Zr /sub 52/Ti /sub 48/)O/sub 3/

    SciTech Connect

    Goo, E.K.; Mishra, R.K.

    1980-08-01

    Ferroelectric domains are twins that are formed when PZT undergoes a phase transformation from a non-ferroelectric cubic phase to a ferroelectric tetragonal phase upon cooling below approx. 375/sup 0/C. The tetragonal phase is spontaneously polarized in the direction of c-axis, making each twin a ferroelectric domain.

  14. Giant electrocaloric effect in ferroelectric nanotubes near room temperature.

    PubMed

    Liu, Man; Wang, Jie

    2015-01-12

    Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO₃ nanotubes, which is several times in magnitude larger than that of PbTiO₃ thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering.

  15. Giant electrocaloric effect in ferroelectric nanotubes near room temperature

    PubMed Central

    Liu, Man; Wang, Jie

    2015-01-01

    Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO3 nanotubes, which is several times in magnitude larger than that of PbTiO3 thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering. PMID:25578434

  16. Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

    NASA Technical Reports Server (NTRS)

    Eskridge, Michael; Gui, Xiao; MacLeod, Todd; Ho, Fat D.

    2011-01-01

    Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.

  17. Ferroelectric nanotubes fabricated using nanowires as positive templates

    SciTech Connect

    Alexe, M.; Hesse, D.; Schmidt, V.; Senz, S.; Fan, H. J.; Zacharias, M.; Goesele, U.

    2006-10-23

    The authors report on fabrication and electrical characterization of ferroelectric nanotubes and metal-ferroelectric-metal composite nanotubes using silicon and ZnO nanowires as positive templates. Nanotubes of high aspect ratio with a minimum inner diameter of about 100 nm and a length ranging from 0.5 {mu}m to a few microns have been obtained by magnetron sputtering and/or pulsed laser deposition. Metal-ferroelectric one-dimensional structures were characterized by piezoelectric scanning probe microscopy, showing piezoelectric hysteresis loops and ferroelectric switching. The presented fabrication approach can be used to fabricate three-dimensional capacitors for ferroelectric nonvolatile memories as well as nanosize piezoelectric scanners and actuators.

  18. Enhanced electromechanical response of ferroelectrics due to charged domain walls

    PubMed Central

    Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Gureev, Maxim; Setter, Nava

    2012-01-01

    While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO3 with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics. PMID:22434191

  19. Enhanced electromechanical response of ferroelectrics due to charged domain walls.

    PubMed

    Sluka, Tomas; Tagantsev, Alexander K; Damjanovic, Dragan; Gureev, Maxim; Setter, Nava

    2012-03-20

    While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO(3) with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics.

  20. Full first-principles simulations on 180^o ferroelectric stripe domains in realistic ferroelectric capacitors.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier; Aguado-Puente, Pablo

    2007-03-01

    The field of ferroelectric thin films is at a momentous stage. Several experimental and theoretical works, both within a phenomenological approach or atomistic models, have been devoted to ascertain the ground state of ferroelectric thin-film capacitors. Using a full first-principles density-functional-theory approach, we have simulated 180^o ferroelectric stripe domains at 0 K in SrRuO3/BaTiO3/SrRuO3 and SrRuO3/PbTiO3/SrRuO3 realistic ferroelectric capacitors epitaxially grown on a SrTiO3 substrate. For a ferroelectic thin-film 2 unit cells thick, the lateral sizes of the domains ranged from 2 to 4 unit cells. The in-plane displacement of the atoms is essential to stabilize the domain structure. A exotic vortex structure, closed by the atoms of the first metallic layer, is found for the polarization. Ph. Ghosez and J. Junquera, http://xxx.lanl.gov/pdf/cond-mat/0605299, and references therein. J. M. Soler et al., J. Phys.: Condens. Matter 14 2745 (2002)

  1. The Modification of Ferroelectric Surfaces for Catalysis

    NASA Astrophysics Data System (ADS)

    Herdiech, Matthew William

    Ferroelectrics are a class of materials in which a net dipole can be associated with each repeat unit, resulting in a potentially large electric field through the material. The ability to reversibly switch the polarization direction by applying an external electric field distinguishes ferroelectrics from polar orientations of ordinary materials. Recent studies exploring the reactivity of ferroelectric surfaces toward polar molecules have shown that the heats of adsorption for these molecules are polarization dependent, but the surfaces tend to be unreactive. Despite the inertness of ferroelectric surfaces, their use as supports for catalytically active materials could yield novel reactivity. As even metal oxides that are generally considered inert can influence the catalytic properties of supported layers, a ferroelectric support may offer the opportunity to modulate catalytic activity since charge compensation of the polar surfaces might include chemical and electronic reconstructions of the active layer. In this thesis, the fabrication of active layers with polarization dependent properties was investigated by coating ferroelectric substrates with catalytically active oxides that are likely to grow in a layer-by-layer manner. Two systems in particular were explored: chromium oxide on ferroelectric lithium niobate (Cr2O3/LiNbO3), and ruthenium oxide on ferroelectric lead zirconate titanate (RuO2/Pb(Zr0.2Ti0.8)O 3). The chromium oxide and ruthenium oxide films were characterized with X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and reflection high energy electron diffraction (RHEED). Additionally, the chromium oxide films were characterized with X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements, and the ruthenium oxide films were characterized with ion scattering spectroscopy (ISS) measurements. The reactivity of the films was investigated using temperature programmed desorption (TPD) measurements. In particular

  2. Business Process Re-Engineering Applied to the Air Force Institute of Technology Office of the Registrar, Records Management.

    DTIC Science & Technology

    1994-12-01

    Forms or letters that become part of the RECORD or generate actions on the RECORD. Includes: AFIT Form 68, AFIT Form 95, official transcript(s), GMAT or... GMAT test results. TRANSCRIPT - A type of OFFICIAL CORRESPONDENCE. TRANSCRIPT UPDATE RECORD - An EXISTING RECORD that requires correction due to the...transcript(s), GMAT or GRE test scores, request for evaluation letter(s), and other official correspondence. ESTABLISH OPTICAL RECORD - A child or

  3. Polarization states and dielectric responses of elastically clamped ferroelectric nanocrystals

    NASA Astrophysics Data System (ADS)

    Azovtsev, A. V.; Pertsev, N. A.

    2016-12-01

    Polarization states and physical properties of ferroelectrics depend on the mechanical boundary conditions due to electrostrictive coupling between electric polarization and lattice strains. Here, we describe theoretically both equilibrium thermodynamic states and electric permittivities of ferroelectric nanocrystals subjected to the elastic three-dimensional (3D) clamping by a surrounding dielectric material. The problem is solved by the minimization of a special thermodynamic potential that describes the case of an ellipsoidal ferroelectric inclusion embedded into a linear elastic matrix. Numerical calculations are performed for BaTiO3, PbTiO3, and Pb(Zr0.5Ti0.5)O3 nanoparticles surrounded by silica glass. It is shown that, in the case of BaTiO3 and PbTiO3, elastic 3D clamping may change the order of a ferroelectric phase transition from first to second. Furthermore, the mechanical inclusion-matrix interaction shifts the temperatures of structural transitions between different ferroelectric states and even eliminates some ferroelectric phases existing in stress-free BaTiO3 and Pb(Zr0.5Ti0.5)O3 crystals. Another important effect of elastic clamping is the lowering of the symmetry of ferroelectric states in ellipsoidal inclusions, where orthorhombic and monoclinic phases may form instead of the tetragonal and rhombohedral bulk counterparts. Finally, our thermodynamic calculations show that the dielectric responses of studied perovskite ferroelectrics are sensitive to matrix-induced clamping as well. For instance, dielectric peaks occurring at structural transitions between different ferroelectric phases in BaTiO3 appear to be much higher in spherical inclusions than in the freestanding crystal. Predicted clamping-induced enhancement of certain dielectric responses at room temperature indicates that composite materials comprising nanocrystals of perovskite ferroelectrics are promising for device applications requiring the use of high-permittivity dielectrics.

  4. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

    SciTech Connect

    Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Mueller, A. H.; Ramesh, R.

    1999-08-30

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

  5. Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor

    NASA Astrophysics Data System (ADS)

    Mehta, Hema; Kaur, Harsupreet

    2016-09-01

    In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon. A complete drain current model has been developed by using Landau-Khalatnikov equation and parabolic potential approximation to analyze device behavior in different operating regions. It has been demonstrated that DGFJL transistor acts as a step-up voltage transformer and exhibits subthreshold slope values less than 60 mV/dec. In order to assess the advantages offered by the proposed device, extensive comparative study has been done with equivalent Double Gate Junctionless Transistor (DGJL) transistor with gate insulator thickness same as ferroelectric gate stack thickness of DGFJL transistor. It is shown that incorporation of ferroelectric layer can overcome the variability issues observed in JL transistors. The device has been studied over a wide range of parameters and bias conditions to comprehensively investigate the device design guidelines to obtain a better insight into the application of DGFJL as a potential candidate for future technology nodes. The analytical results so derived from the model have been verified with simulated results obtained using ATLAS TCAD simulator and a good agreement has been found.

  6. High-dielectric-constant ferroelectric thin film and bulk ceramic capacitors for power electronics.

    SciTech Connect

    Auciello, O. H.; Baldo, P.; Baumann, P.; Erck, R. A.; Giumarra, J.; Im, J.; Kaufman, D. Y.; Lanagan, M. T.; Pan, M. J.; Streiffer, S. K.; Zebrowski, J.

    1999-08-10

    Significant effort is presently focused on reducing the size and weight of power electronic modules. To achieve these goals in high-power capacitors, alternative materials and fabrication processes are needed. Thin film (<0.5 {micro}m) and bulk capacitors that use perovskite-based ferroelectric dielectrics are promising alternative technologies. Ferroelectrics possess high dielectric constants, thus offering substantial increases in volumetric capacitance. In thin film form, these materials display low loss and high breakdown strength. The unique properties of some of these materials, such as a nonlinear dielectric response or a high energy-storage capacity accompanying a phase change, can be exploited for power electronic capacitors. Prototype capacitors of two such materials, (Ba,Sr)TiO{sub 3} and PbZrO{sub 3}, have been fabricated in both thin film and bulk ceramic form. The influence of fabrication conditions on dielectric properties has been studied. Initial studies have demonstrated the viability of perovskite ferroelectrics for next-generation capacitor components.

  7. Numerical modeling of dielectrics electrocaloric effect near the ferroelectric-paraelectric phase transformation

    NASA Astrophysics Data System (ADS)

    Wang, Yixing; Liu, Liwu; Liu, Yanju; Leng, Jinsong

    2013-08-01

    Dielectrics with great electrocaloric effect (ECE) have great potential to be applied in modern refrigeration industry. Compared with the traditional refrigeration technology, it is environmentally friendly and has a higher efficiency. Researchers have found that compared with ECE occurring in ferroelectric phase, ECE in paraelectric state is giant. This paper is determined on calculating the ECE of several kinds of polar dielectric material so as to find some materials with giant ECE. First, we investigate the theoretical framework of ECE near the Ferroelectric-Paraelectric phase transformation, and we show the formula derivation of ECE near the Ferroelectric-Paraelectric phase transformation in the analytical method of the calculus derivation. Then we deduce the expression of phenomenological study parameters. Finally, we calculate the maximum temperature change, entropy change and the mechanical work of several kinds of dielectrics based on the expression deduced. We successfully find some dielectrics with giant ECE. The paper should offer great help in finding the dielectrics with giant ECE, which is of great value in application.

  8. Magnetoelectric Coupling, Ferroelectricity, and Magnetic Memory Effect in Double Perovskite La3Ni2NbO9.

    PubMed

    Dey, K; Indra, A; De, D; Majumdar, S; Giri, S

    2016-05-25

    We observe ferroelectricity in an almost unexplored double perovskite La3Ni2NbO9. Ferroelectricity appears below ∼60 K, which is found to be correlated with the significant magnetostriction. A reasonably large value of spontaneous electric polarization is recorded to be ∼260 μC/m(2) at 10 K for E = 5 kV/cm, which decreases signifi- cantly upon application of a magnetic field (H), suggesting considerable magnetoelectric coupling. The dielectric permittivity is also influenced by H below the ferroelectric transition. The magnetodielectric response scales linearly to the squared magnetization, as described by the Ginzburg-Landau theory. Meticulous studies of static and dynamic features of dc magnetization and frequency dependent ac susceptibility results suggest spin-glass state below 29 K. Intrinsic magnetic memory effect is observed from zero-field cooled magnetization and isothermal remanent magnetization studies, also pointing spin-glass state below 29 K. Appearance of ferroelectricity together with a significant magnetoelectric coupling in absence of conventional long-range magnetic order is promising for searching new magnetoelectric materials.

  9. Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Xiao, Juanxiu; Wang, Jingxian; Zhang, Lei; Deng, Jinyu; Liu, Ziyan; Dong, Zhili; Wang, John; Chen, Jingsheng

    2016-06-01

    Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

  10. High-efficient and high-content cytotoxic recording via dynamic and continuous cell-based impedance biosensor technology.

    PubMed

    Hu, Ning; Fang, Jiaru; Zou, Ling; Wan, Hao; Pan, Yuxiang; Su, Kaiqi; Zhang, Xi; Wang, Ping

    2016-10-01

    Cell-based bioassays were effective method to assess the compound toxicity by cell viability, and the traditional label-based methods missed much information of cell growth due to endpoint detection, while the higher throughputs were demanded to obtain dynamic information. Cell-based biosensor methods can dynamically and continuously monitor with cell viability, however, the dynamic information was often ignored or seldom utilized in the toxin and drug assessment. Here, we reported a high-efficient and high-content cytotoxic recording method via dynamic and continuous cell-based impedance biosensor technology. The dynamic cell viability, inhibition ratio and growth rate were derived from the dynamic response curves from the cell-based impedance biosensor. The results showed that the biosensors has the dose-dependent manners to diarrhetic shellfish toxin, okadiac acid based on the analysis of the dynamic cell viability and cell growth status. Moreover, the throughputs of dynamic cytotoxicity were compared between cell-based biosensor methods and label-based endpoint methods. This cell-based impedance biosensor can provide a flexible, cost and label-efficient platform of cell viability assessment in the shellfish toxin screening fields.

  11. Development of prostate cancer research database with the clinical data warehouse technology for direct linkage with electronic medical record system.

    PubMed

    Choi, In Young; Park, Seungho; Park, Bumjoon; Chung, Byung Ha; Kim, Choung-Soo; Lee, Hyun Moo; Byun, Seok-Soo; Lee, Ji Youl

    2013-01-01

    In spite of increased prostate cancer patients, little is known about the impact of treatments for prostate cancer patients and outcome of different treatments based on nationwide data. In order to obtain more comprehensive information for Korean prostate cancer patients, many professionals urged to have national system to monitor the quality of prostate cancer care. To gain its objective, the prostate cancer database system was planned and cautiously accommodated different views from various professions. This prostate cancer research database system incorporates information about a prostate cancer research including demographics, medical history, operation information, laboratory, and quality of life surveys. And, this system includes three different ways of clinical data collection to produce a comprehensive data base; direct data extraction from electronic medical record (EMR) system, manual data entry after linking EMR documents like magnetic resonance imaging findings and paper-based data collection for survey from patients. We implemented clinical data warehouse technology to test direct EMR link method with St. Mary's Hospital system. Using this method, total number of eligible patients were 2,300 from 1997 until 2012. Among them, 538 patients conducted surgery and others have different treatments. Our database system could provide the infrastructure for collecting error free data to support various retrospective and prospective studies.

  12. Development of prostate cancer research database with the clinical data warehouse technology for direct linkage with electronic medical record system

    PubMed Central

    Choi, In Young; Park, Seungho; Park, Bumjoon; Chung, Byung Ha; Kim, Choung-Soo; Lee, Hyun Moo; Byun, Seok-Soo; Lee, Ji Youl

    2013-01-01

    Purpose: In spite of increased prostate cancer patients, little is known about the impact of treatments for prostate cancer patients and outcome of different treatments based on nationwide data. In order to obtain more comprehensive information for Korean prostate cancer patients, many professionals urged to have national system to monitor the quality of prostate cancer care. To gain its objective, the prostate cancer database system was planned and cautiously accommodated different views from various professions. Methods: This prostate cancer research database system incorporates information about a prostate cancer research including demographics, medical history, operation information, laboratory, and quality of life surveys. And, this system includes three different ways of clinical data collection to produce a comprehensive data base; direct data extraction from electronic medical record (EMR) system, manual data entry after linking EMR documents like magnetic resonance imaging findings and paper-based data collection for survey from patients. Results: We implemented clinical data warehouse technology to test direct EMR link method with St. Mary’s Hospital system. Using this method, total number of eligible patients were 2,300 from 1997 until 2012. Among them, 538 patients conducted surgery and others have different treatments. Conclusions: Our database system could provide the infrastructure for collecting error free data to support various retrospective and prospective studies. PMID:24223403

  13. The Oxford clinical intranet: providing clinicians with access to patient records and multiple knowledge bases with internet technology.

    PubMed

    Kay, Jonathan D S; Nurse, Dave; Bountis, Christos; Paddon, Kevin

    2004-01-01

    The Oxford Clinical Intranet provides clinicians in primary and secondary care across Oxfordshire with: Access to information about their patients held on multiple remote disparate computer systems, including admissions and episodes, Laboratory Medicine reports, Radiology reports and hospital discharge letters. The patient records are managed using CSW Case Notes. Access to support and advisory information, developed both within the organization and collected from other sites and projects, a wide range of internal handbooks, directories and guidelines and links to external resources, including evidence-based resources, the Cochrane Collaboration and the NHS National electronic Library of Health. Automated retrieval and presentation of the support information that is contextually appropriate to the task being carried out by the clinician and the information held about the patient. For example laboratory reports are linked to handbooks and other reference sources using eLABook, a web-interfaced database subsystem. Internet technology has been used throughout, thus providing a thin-client architecture with cross-platform ability. Appropriate data standards have been used across the communicating systems and the intranet is compliant with the UK eGovernment Interoperability Framework. The intranet was developed at low cost and is now in routine use. This approach appears to be transferable across systems and organisations.

  14. Texture and anisotropy in ferroelectric lead metaniobate

    NASA Astrophysics Data System (ADS)

    Iverson, Benjamin John

    Ferroelectric lead metaniobate, PbNb2O6, is a piezoelectric ceramic typically used because of its elevated Curie temperature and anisotropic properties. However, the piezoelectric constant, d33, is relatively low in randomly oriented ceramics when compared to other ferroelectrics. Crystallographic texturing is often employed to increase the piezoelectric constant because the spontaneous polarization axes of grains are better aligned. In this research, crystallographic textures induced through tape casting are distinguished from textures induced through electrical poling. Texture is described using multiple quantitative approaches utilizing X-ray and neutron time-of-flight diffraction. Tape casting lead metaniobate with an inclusion of acicular template particles induces an orthotropic texture distribution. Templated grain growth from seed particles oriented during casting results in anisotropic grain structures. The degree of preferred orientation is directly linked to the shear behavior of the tape cast slurry. Increases in template concentration, slurry viscosity, and casting velocity lead to larger textures by inducing more particle orientation in the tape casting plane. The maximum 010 texture distributions were two and a half multiples of a random distribution. Ferroelectric texture was induced by electrical poling. Electric poling increases the volume of material oriented with the spontaneous polarization direction in the material. Samples with an initial paraelectric texture exhibit a greater change in the domain volume fraction during electrical poling than randomly oriented ceramics. In tape cast samples, the resulting piezoelectric response is proportional to the 010 texture present prior to poling. This results in property anisotropy dependent on initial texture. Piezoelectric properties measured on the most textured ceramics were similar to those obtained with a commercial standard.

  15. Ferroelectric response of Na0.9Li0.1NbO3 at room temperature

    NASA Astrophysics Data System (ADS)

    Isaza-Zapata, V.; Arias, A.; Maya, C.; Martínez, W.; Agudelo, A.; Álvarez, B.; Gómez, A.; Izquierdo, J. L.

    2017-06-01

    Polycrystalline samples of the dielectric, ferroelectric Na0.9Li0.1NbO3 were synthesized by means of solid-state reaction using different ramps of temperature. High purity precursors Nb2O5, Na2CO3 and Li2CO3 were stoichiometricaly mixed and heated at 1373 K for 6 hours in air atmosphere. The Na0.9Li0.1NbO3 samples were characterized by means of diffraction of X-rays using a Panalytical X’Pert Pro diffractometer. The obtained diffractograms were refined by Rietveld procedure using the software Maud. The results show that Na0.9Li0.1NbO3 crystallizes in an orthorhombic structure (space group Pbma). The refined diffraction patterns also suggest a possible replacement of the Na ions by Li ions in the parent, ferroelectric NaNbO3 compound. For electrical characterization of the samples, electrical polarization curves were measured using a Radiant Technologies RT66A test system for ferroelectric materials. The polarization versus applied electrical dependence shows a hysteretic behavior verifying the ferroelectric character of the material. A maxima polarization of 130 µC/m2 is obtained at room temperature.

  16. Benefits and Risks of Electronic Medical Record (EMR): An Interpretive Analysis of Healthcare Consumers' Perceptions of an Evolving Health Information Systems Technology

    ERIC Educational Resources Information Center

    Thompson, Chester D.

    2013-01-01

    The purpose of this study is to explore healthcare consumers' perceptions of their Electronic Medical Records (EMRs). Although there have been numerous studies regarding EMRs, there have been minimal, if any, research that explores healthcare consumers' awareness of this technology and the social implications that result. As consumers' health…

  17. Benefits and Risks of Electronic Medical Record (EMR): An Interpretive Analysis of Healthcare Consumers' Perceptions of an Evolving Health Information Systems Technology

    ERIC Educational Resources Information Center

    Thompson, Chester D.

    2013-01-01

    The purpose of this study is to explore healthcare consumers' perceptions of their Electronic Medical Records (EMRs). Although there have been numerous studies regarding EMRs, there have been minimal, if any, research that explores healthcare consumers' awareness of this technology and the social implications that result. As consumers' health…

  18. Less Contact Ballistogram Recording during Sleep as a Perspective Technology for the Medical Monitoring System in a Mission to Mars

    NASA Astrophysics Data System (ADS)

    Baevsky, R. M.; Bogomolov, V. V.; Funtova, I. I.

    strong argument for success of a future Martian mission is absence of pathologies developed in cosmonauts following one-year or longer space flights that might forbid further gradual extension of piloted missions. However, functional shifts in the neurohormonal regulation revealed during the long-term Mir missions suggest that homeostasis of the vital important body systems is maintained owing to active functioning of the regulatory mechanisms (Grigoriev A.I. et al., 1998). Since overstrain of these mechanisms constitutes one of the main factors of risk of diseases, it is important to provide unfailing and systematic monitoring of the body regulation functional reserves. night ballistocardiography, made it possible to obtain data on super-slow heart rhythm fluctuations reflective of activation of the neurohormonal regulation (Baevsky R.M. et al., 1999). Analysis of the data showed that on a background of extended exposure of the human organism to various stressful factors the cardiovascular homeostasis is maintained through consecutive recruitment in adaptation of higher levels of regulation of the physiological systems (Grigoriev A.I., Baevsky R.M., 2001). This validates the hypothesis concerning the role of the higher autonomous centers in long-term adaptation to the spaceflight factors and opens up the new way to diagnosis and prediction of the human body functional reserves. It was first demonstrated in space during the Mir primary mission 9 in 1991. Sensor-accelerometer secured to cosmonaut's sleeping bag registered micromovements conditioned by the heart, respiratory and motor activities of a sleeping cosmonaut. The joint Russian-Austrian space investigations in 1992-1995 resulted in technology refinement and enhancement. Advantages of medical monitoring during sleep are obvious not only because of the time saving and opportunity to receive systematically information pertaining to the crew health. Records allow, to begin with, evaluate the functional state in

  19. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    DOE PAGES

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; ...

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up tomore » 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.« less

  20. Nanoscale probing and photonic applications of ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Tian, Lili

    Ferroelectrics are a versatile solid-state platform for a new generation of micro- and nanophotonic applications. Conventional integrated optics has often treated the phenomenon of ferroelectric domains and domain walls more as a nuisance rather than an asset. Ironically, domain walls can be immensely valuable in realizing a wide variety of new functionalities such as laser scanning, dynamic focusing, frequency conversion, beam shaping, waveguiding, high-speed modulation, and photonic crystal structures. All of these functions can be realized by shaping ferroelectric domain walls into arbitrary shapes on micro to nanoscale dimensions. Domain walls, however, have a mind of their own when it comes to shaping them. This thesis will focus on the fundamental domain switching characteristics under the uniform electrical fields, and local electromechanical response across the single ferroelectric domain wall in ferroelectric crystals lithium niobate, lithium tantalate and strontium barium niobate. The local electromechanical response across the single was modeled using finite element method to better understand the fundamentals of piezoelectric force microscopy in order to quantitatively interpret the measured material properties. The influence of stoichiometry on domain dynamics on macroscale and on local electromechanical properties on nanoscale was studied. The challenges in shaping ferroelectric domain are discussed and the examples of optical devices such as optical switch and optical beam deflector based on ferroelectric domain walls are presented.

  1. X-ray linear dichroism dependence on ferroelectric polarization.

    PubMed

    Polisetty, S; Zhou, J; Karthik, J; Damodaran, A R; Chen, D; Scholl, A; Martin, L W; Holcomb, M

    2012-06-20

    X-ray absorption spectroscopy and photoemission electron microscopy are techniques commonly used to determine the magnetic properties of thin films, crystals, and heterostructures. Recently, these methods have been used in the study of magnetoelectrics and multiferroics. The analysis of such materials has been compromised by the presence of multiple order parameters and the lack of information on how to separate these coupled properties. In this work, we shed light on the manifestation of dichroism from ferroelectric polarization and atomic structure using photoemission electron microscopy and x-ray absorption spectroscopy. Linear dichroism arising from the ferroelectric order in the PbZr0:2Ti0:8O3 thin films was studied as a function of incident x-ray polarization and geometry to unambiguously determine the angular dependence of the ferroelectric contribution to the dichroism. These measurements allow us to examine the contribution of surface charges and ferroelectric polarization as potential mechanisms for linear dichroism. The x-ray linear dichroism from ferroelectric order revealed an angular dependence based on the angle between the ferroelectric polarization direction and the x-ray polarization axis, allowing a formula for linear dichroism in ferroelectric samples to be defined.

  2. A lead-halide perovskite molecular ferroelectric semiconductor.

    PubMed

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D; Xiong, Ren-Gen

    2015-05-29

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm(-2) and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics.

  3. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  4. A lead-halide perovskite molecular ferroelectric semiconductor

    PubMed Central

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D.; Xiong, Ren-Gen

    2015-01-01

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm−2 and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics. PMID:26021758

  5. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    PubMed Central

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-01-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. PMID:27122309

  6. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  7. Unravelling and controlling hidden imprint fields in ferroelectric capacitors.

    PubMed

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-28

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  8. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    SciTech Connect

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up to 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.

  9. Ferroelectric domain gratings and Barkhausen spikes in potassium lithium tantalate niobate

    SciTech Connect

    Tong, X.; Yariv, A.; Zhang, M.; Agranat, A.J.; Hofmeister, R.; Leyva, V.

    1997-04-01

    The observation of Barkhausen current spikes during the recording of volume phase holograms in potassium lithium tantalate niobate is reported on. These spikes are due to the ferroelectric domain reversal induced by photorefractive space charge fields. Both {open_quotes}small{close_quotes} (1 nA) and {open_quotes}large{close_quotes} (100 nA) spikes are observed, which correspond to micro and macro domain reversal, respectively. The diffraction efficiency can change as much as 50{percent} during a single macrodomain switching. {copyright} {ital 1997 American Institute of Physics.}

  10. Topographic investigation of ferroelectric domain structures in periodically-poled lithium niobate crystals by a profilometer

    SciTech Connect

    Bazzan, M.; Argiolas, N.; Bernardi, A.; Mazzoldi, P.; Sada, C

    2003-10-15

    A topographic investigation of periodically poled lithium niobate (PPLN) crystals was performed by recording a map of the crystal surface after a selective etching process using a standard profilometer. A procedure to correct for the systematic error introduced by the finite size of the tip is discussed in detail so that the width of ferroelectric domains can be mapped with an estimated tolerance of about 3% along the whole length of the sample. The method is applied to a PPLN structure obtained by the Czochralski off-center technique.

  11. Molecular Dynamics Simulations of Ferroelectric Phase Transitions

    NASA Astrophysics Data System (ADS)

    Yu, Rici; Krakauer, Henry

    1997-03-01

    Based on an analysis of the wavevector dependence of the lattice instabilities in KNbO_3, we proposed a real-space chain-like instability and a scenario of sequential freezing out or onset of coherence of these instabilities, which qualitatively explains the sequence of observed temperature-dependent ferroelectric phases.(R. Yu and H. Krakauer, Phys. Rev. Lett. 74), 4067 (1995). We suggested that this chain-like instability should also be found in BaTiO_3, and this has been subsequently confirmed by Ghosez et al.(P. Ghosez et al.), Proc. 4th Williamsburg Workshop on First-Principles Calculations for Ferroelectrics, to be published We will present molecular dynamics simulations on BaTiO_3, using effective Hamiltonians constructed from first-principles calculations,(W. Zhong, D. Vanderbilt, and K. M. Rabe, Phys. Rev. Lett. 73), 1861 (1994). that reproduce the essential features of diffuse x-ray scattering measurements in the cubic, tetragonal, orthorhombic, and rhombohedral phases. The good agreement supports the interpretation of real-space chain-formation. Simulations for KNbO3 may also be reported.

  12. Ferroelectric based catalysis: Switchable surface chemistry

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  13. Improper ferroelectricity: A theoretical and experimental investigation

    NASA Astrophysics Data System (ADS)

    Hardy, J. R.; Ullman, F. G.

    1984-02-01

    A combined theoretical and experimental study has been made of the origins and properties of the improper ferroelectricity associated with structural modulations of non-zero wavelengths. Two classes of materials have been studied: rare earth molybdates (specifically, gadolinium molybdate: GMO), and potassium selenate and its isomorphs. In the former, the modulation is produced by a zone boundary phonon instability, and in the latter by the instability of a phonon of wave vector approximately two-thirds of the way to the zone-boundary. In the second case the initial result is a modulated structure whose repeat distance is not a rational multiple of the basic lattice repeat distance. This result is a modulated polarization which, when the basic modulation locks in to a rational multiple of the lattice spacing, becomes uniform, and improper ferroelectricity results. The origins of these effects have been elucidated by theoretical studies, initially semi-empirical, but subsequently from first-principles. These complemented the experimental work, which primarily used inelastic light scattering, uniaxial stress, and hydrostatic pressure, to probe the balance between the interionic forces through the effects on the phonons and dielectric properties.

  14. Functional ferroelectric tunnel junctions on silicon

    NASA Astrophysics Data System (ADS)

    Guo, Rui; Wang, Zhe; Zeng, Shengwei; Han, Kun; Huang, Lisen; Schlom, Darrell G.; Venkatesan, T.; Ariando; Chen, Jingsheng

    2015-07-01

    The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the “universal memory”. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.

  15. Ferroelectric Liquid Crystals In Aerodynamic Testing

    NASA Technical Reports Server (NTRS)

    Parmar, Devendra S.; Holmes, Harlan K.

    1994-01-01

    The process of simultaneous optical visualization and quantitative measurement of aerodynamic boundary layer parameters requires new concepts, materials and utilization methods. Measurement of shear stress in terms of the transmitted or the reflected light intensity from an aligned ferroelectric liquid crystal (FLC) thin (approx. 1 micron) film deposited on a glass substrate has been the first step in this direction. In this paper, recent progress in utilization of FLC thin films for skin friction measurement and for studying the state of the boundary layer in a wind tunnel environment is reviewed. The switching characteristics of FLCs have been used to measure pressure from the newly devised system of partially exposed polymer dispersed ferroelectric liquid crystals (PEPDFLCs). In this configuration, a PEPDFLC thin film (approx. 10-25 microns) is sandwiched between two transparent conducting electrodes, one a rigid surface and the other a flexible sheet such as polyvinylidene fluoride or mylar. The switching characteristics of the film are a function of the pressure applied to the flexible transparent electrode and a predetermined bias voltage across the two electrodes. The results, considering the dielectrics of composite media, are discussed.

  16. Prediction of a native ferroelectric metal

    PubMed Central

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-01-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity—that is, the existence of a switchable intrinsic electric polarization—has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound. PMID:27040076

  17. New technologies and nursing: use and perception of primary healthcare nurses about electronic health record in Catalonia, Spain.

    PubMed

    Galimany-Masclans, Jordi; Garrido-Aguilar, Eva; Girbau-García, Ma Rosa; Lluch-Canut, Teresa; Fabrellas-Padrés, Nuria

    2011-10-01

    This study was aimed to analyze and assess the use and perception of electronic health records (EHRs) by nurses. The study sample included 113 nurses from different shifts of primary health facilities in Catalonia, Spain, devoted to adult as well as pediatric outpatients using EHRs throughout the year 2010. A majority of the sample (87.5%) were women and 12.5% were men. The average age was 44.27 years and the average time working in primary healthcare was 47.15 months. A majority (80.4%) received specific training on the use of the EHR and 19.6% did not. The use of the application required side technical support (mean: 3.42) and it is considered necessary to learn more about the performance of the application (mean: 3.50). The relationship between the average ratings that nurses have about the EHR and age shows that there is no statistically significant linear relationship (r=-0.002, p-value=0.984). As to how long they have used the EHRs, there are significant differences (r=-0.304, p-value=0.00), so the more time the nurse takes using the EHR, the greater degree of satisfaction is shown. In addition, there are significant differences between nurses' perceptions regarding the EHR and gender (t=-0.421, p-value=0.675). Nurses assessed as positive the contribution of the EHRs in their nursing care day work (average score: 2.55/5). Considering that the usability of the EHR device is assessed as satisfactory, the results of the perception of nurses show that we must also take into account the training and emphasize the need for a side technical support in the implementation process of the EHR. Doing so, the positive perception that nurses have in regard to information and communication technology in general and with respect to the EHR in particular may be increased.

  18. Electrocaloric effect in ferroelectric nanowires from atomistic simulations

    NASA Astrophysics Data System (ADS)

    Herchig, R.; Chang, C.-M.; Mani, B. K.; Ponomareva, I.

    2015-11-01

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed.

  19. Electrocaloric effect in ferroelectric nanowires from atomistic simulations

    PubMed Central

    Herchig, R.; Chang, C.-M.; Mani, B. K.; Ponomareva, I.

    2015-01-01

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed. PMID:26612267

  20. Electrocaloric effect in ferroelectric nanowires from atomistic simulations.

    PubMed

    Herchig, R; Chang, C-M; Mani, B K; Ponomareva, I

    2015-11-27

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed.