Science.gov

Sample records for ferroelectric recording technology

  1. Ferroelectric Based Technologies for Accelerators

    SciTech Connect

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Kazakov, S.; Tagantsev, A.; Yakovlev, V.

    2009-01-22

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used--its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  2. Ferroelectric Based Technologies for Accelerators

    NASA Astrophysics Data System (ADS)

    Kanareykin, A.; Nenasheva, E.; Kazakov, S.; Kozyrev, A.; Tagantsev, A.; Yakovlev, V.; Jing, C.

    2009-01-01

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used—its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  3. Records Reaching Recording Data Technologies

    NASA Astrophysics Data System (ADS)

    Gresik, G. W. L.; Siebe, S.; Drewello, R.

    2013-07-01

    The goal of RECORDS (Reaching Recording Data Technologies) is the digital capturing of buildings and cultural heritage objects in hard-to-reach areas and the combination of data. It is achieved by using a modified crane from film industry, which is able to carry different measuring systems. The low-vibration measurement should be guaranteed by a gyroscopic controlled advice that has been , developed for the project. The data were achieved by using digital photography, UV-fluorescence photography, infrared reflectography, infrared thermography and shearography. Also a terrestrial 3D laser scanner and a light stripe topography scanner have been used The combination of the recorded data should ensure a complementary analysis of monuments and buildings.

  4. High-density ferroelectric recording using a hard disk drive-type data storage system

    NASA Astrophysics Data System (ADS)

    Aoki, Tomonori; Hiranaga, Yoshiomi; Cho, Yasuo

    2016-05-01

    Ferroelectric probe data storage has been proposed as a novel data storage method in which bits are recorded based on the polarization directions of individual domains. These bits are subsequently read by scanning nonlinear dielectric microscopy. The domain walls of typical ferroelectric materials are quite thin: often only several times the lattice constant, which is advantageous for high-density data storage. In this work, high-density read/write (R/W) demonstrations were conducted using a hard disk drive-type test system, and the writing of bit arrays with a recording density of 3.4 Tbit/in.2 was achieved. Additionally, a series of writing and reading operations was successfully demonstrated at a density of 1 Tbit/in.2. Favorable characteristics of ferroelectric recording media for use with the proposed method are discussed in the latter part of this paper.

  5. Pyroelectric and ferroelectric semiconductors: dynamic holographic grating recording, generation of self-focused electron beam, X-rays, and neutrons

    NASA Astrophysics Data System (ADS)

    Kukhtarev, N. V.; Kukhtareva, T. V.; Land, P.; Wang, J. C.

    2007-09-01

    Optical and electrical effects in semiconductors and ferroelectric crystals will be modeled. Standard photorefractive equations are supplemented by the equation of state for the polarization density following Devonshire-Ginsburg-Landau (DGL) approach. We have derived equations for pyroelectric and photogalvanic contribution to the holographic grating recording in ferroelectric materials. We will consider double-functional holographic interferometer, based on holographic pyroelectric current and optical beam coupling. Crystal electrostatic accelerators, based on charging of ferroelectric crystals by pyroelectric and photogalvanic effects are discussed in relation to generation of self-focused electron beam, X-rays and neutrons.

  6. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    NASA Astrophysics Data System (ADS)

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-06-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  7. Recording Technologies: Sights & Sounds. Resources in Technology.

    ERIC Educational Resources Information Center

    Deal, Walter F., III

    1994-01-01

    Provides information on recording technologies such as laser disks, audio and videotape, and video cameras. Presents a design brief that includes objectives, student outcomes, and a student quiz. (JOW)

  8. 1 Tbit/in.2 Very-High-Density Recording in Mass-Productive Polycrystalline Ferroelectric Thin Film Media

    NASA Astrophysics Data System (ADS)

    Fujimoto, Kenjiro; Kawano, Takahiro; Onoe, Atsushi; Tamura, Masahiro; Umeda, Masaru; Toda, Masayuki

    2009-07-01

    We demonstrate very-high-density ferroelectric recording experiments of 1 Tbit/in.2 in polycrystalline Pb(Zr,Ti)O3 (PZT) thin film for the first time. A high-quality polycrystalline PZT thin film was successfully deposited on a silicon substrate with a SrRuO3 (SRO) electrode by metal-organic chemical vapor deposition (MOCVD). The roughness of the PZT film was reduced to less than 1 nm by chemical mechanical polishing (CMP). The PZT film has very high controllability for domain inversion. Our fabrication process also enables high productivity. Therefore, our PZT film has potential to be a mass-productive ferroelectric recording medium for high-density storage systems.

  9. High-Density Ferroelectric Recording Using Diamond Probe by Scanning Nonlinear Dielectric Microscopy

    NASA Astrophysics Data System (ADS)

    Takahashi, Hirokazu; Onoe, Astushi; Ono, Takahito; Cho, Yasuo; Esashi, Masayoshi

    2006-03-01

    In this paper, we report the development of a diamond multiprobe for ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM), which is a technique for determining polarized directions in ferroelectric domains by measuring a nonlinear dielectric constant with an electrical inductance-capacitance (LC) resonator. SNDM has the capability of both reading and writing nanosized polarized ferroelectric domain information at a high speed, since the SNDM technique is a purely electrical method. Boron-doped diamond synthesized by hot-filament chemical vapor deposition is chosen as a conductive and robust probe material. The diamond probes are fabricated using a combination of the silicon lost-mold technique and selective growth. We present the fabrication of the diamond multiprobe and data storage experiments using a ferroelectric LiTaO3 thin film. It is demonstrated that the boron-doped diamond probe can be used for data storage based on SNDM.

  10. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    PubMed Central

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (∼16 V), low read voltages (∼−1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices. PMID:24912617

  11. Recording vocalizations with Bluetooth technology.

    PubMed

    Gaona-González, Andrés; Santillán-Doherty, Ana María; Arenas-Rosas, Rita Virginia; Muñoz-Delgado, Jairo; Aguillón-Pantaleón, Miguel Angel; Ordoñez-Gómez, José Domingo; Márquez-Arias, Alejandra

    2011-06-01

    We propose a method for capturing vocalizations that is designed to avoid some of the limiting factors found in traditional bioacoustical methods, such as the impossibility of obtaining continuous long-term registers or analyzing amplitude due to the continuous change of distance between the subject and the position of the recording system. Using Bluetooth technology, vocalizations are captured and transmitted wirelessly into a receiving system without affecting the quality of the signal. The recordings of the proposed system were compared to those obtained as a reference, which were based on the coding of the signal with the so-called pulse-code modulation technique in WAV audio format without any compressing process. The evaluation showed p < .05 for the measured quantitative and qualitative parameters. We also describe how the transmitting system is encapsulated and fixed on the animal and a way to video record a spider monkey's behavior simultaneously with the audio recordings.

  12. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

    PubMed Central

    2011-01-01

    In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. PMID:21794156

  13. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

    NASA Astrophysics Data System (ADS)

    Shen, Zhenkui; Chen, Zhihui; Lu, Qian; Qiu, Zhijun; Jiang, Anquan; Qu, Xinping; Chen, Yifang; Liu, Ran

    2011-07-01

    In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  14. Ferroelectric Pump

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    2000-01-01

    A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

  15. Photodeposition Recording And Display Technology

    NASA Astrophysics Data System (ADS)

    Peled, A.

    1985-02-01

    The Photodeposition Effect (PDE) of Selenium hydrosols was investigated for transient photoactivation properties. It was found that the Volume Photoprecipitation (VP) has a faster response time as compared to Surface Photodeposition (SP). SP can be used for permanent recording of plane images. The faster VP process may be used in large volume display applications in near real time.

  16. Photodeposition Recording And Display Technology

    NASA Astrophysics Data System (ADS)

    Peled, A.

    1985-08-01

    The photodeposition effect of selenium hydrosols was investigated for transient photoactivation properties. It was found that volume photoprecipitation (VP) has a faster response time compared to surface photodeposition (SP). SP can be used for permanent recording of plane images. The faster VP process may be used in large volume display applications in near real time.

  17. Photonic quantum technologies (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    O'Brien, Jeremy L.

    2015-09-01

    The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

  18. Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories

    PubMed Central

    Nga Ng, Tse; Schwartz, David E.; Mei, Ping; Krusor, Brent; Kor, Sivkheng; Veres, Janos; Bröms, Per; Eriksson, Torbjörn; Wang, Yong; Hagel, Olle; Karlsson, Christer

    2015-01-01

    We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record. PMID:26307438

  19. Memory Technologies and Data Recorder Design

    NASA Technical Reports Server (NTRS)

    Strauss, Karl F

    2009-01-01

    Missions, both near Earth and deep space, are under consideration that will require data recorder capacities of such magnitude as to be unthinkable just a few years ago. Concepts requiring well over 16,000 GB of storage are being studied. To achieve this capacity via "normal means" was considered incredible as recently as 2004. This paper is presented in two parts. Part I describes the analysis of data recorder capacities for missions as far back as 35 years and provides a projection of data capacities required 20 years from now based upon missions either nearing launch, or in the planning stage. The paper presents a similar projection of memory device capacities as baselined in the ITRS - the International Technology Roadmap for Semiconductors. Using known Total Ionizing Dose tolerance going back as far as a decade, a projection of total dose tolerance is made for two prime technologies out to the year 2028.

  20. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  1. Technology Acceptance of Electronic Medical Records by Nurses

    ERIC Educational Resources Information Center

    Stocker, Gary

    2010-01-01

    The purpose of this study was to evaluate the Technology Acceptance Model's (TAM) relevance of the intention of nurses to use electronic medical records in acute health care settings. The basic technology acceptance research of Davis (1989) was applied to the specific technology tool of electronic medical records (EMR) in a specific setting…

  2. Properties of Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Ponomareva, Inna

    2008-03-01

    Ferroelectric nanostructures (FENs) such as thin films, nanowires and nanodots are receiving a lot of attention due to their potential for technological applications and to the rich variety of underlying physics. Interestingly, properties of FENs can substantially deviate from their bulk counterpart due to their sensitivity to many factors. Examples of such factors are the electrical boundary conditions (associated with the full, partial or non-existent screening of polarization-induced surface charges) and mechanical boundary conditions (arising from the lattice mismatch between the FEN and its substrate). Here, we developed and used computational schemes to predict many properties in various FENs, as well as, to provide atomistic insight to their complex phenomena. In particular, we will show the striking following features and reveal their origins: *The interplay between electrical boundary conditions, mechanical boundary conditions and growth direction results in the appearance of novel dipole patterns and new low-symmetry phases possessing superior dielectric properties in ferroelectric dots, wires and films [1,2]. *FENs can exhibit dielectric anomalies, such as a negative dielectric susceptibility [3]. *Nanobubbles can form in ferroelectric films under an external electric field [4]. *An homogeneous electric field can be used to control the chirality of vortex structures in asymmetric ferroelectric dots, via the creation of original intermediate states [5]. [1] I. Ponomareva et al., Phys. Rev. B 72, 214118 (2005). [2] I. Ponomareva and L. Bellaiche, Phys. Rev. B 74, 064102 (2006). [3] I. Ponomareva et al., to be published in Phys. Rev. Lett. (2007). [4] B.-K. Lai et al., Phys. Rev. Lett. 96, 137602 (2006). [5] S. Prosandeev et al., submitted (2007). These works have been done in collaboration with L. Bellaiche, I. Kornev, B.-K. Lai, I.I. Naumov, R. Resta and S. Prosandeev. Some computations were made possible thanks to the MRI Grants 0421099 and 0722625 from

  3. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 3 2013-10-01 2013-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  4. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 3 2014-10-01 2014-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  5. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 3 2012-10-01 2012-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  6. The United States Department of Energy Office of Industrial Technology`s Technology Benefits Recording System

    SciTech Connect

    Hughes, K.R.; Moore, N.L.

    1994-09-01

    The U.S. Department of Energy (DOE) Office of Industrial Technology`s (OIT`s) Technology Benefits Recording System (TBRS) was developed by Pacific Northwest Laboratory (PNL). The TBRS is used to organize and maintain records of the benefits accrued from the use of technologies developed with the assistance of OIT. OIT has had a sustained emphasis on technology deployment. While individual program managers have specific technology deployment goals for each of their ongoing programs, the Office has also established a separate Technology Deployment Division whose mission is to assist program managers and research and development partners commercialize technologies. As part of this effort, the Technology Deployment Division developed an energy-tracking task which has been performed by PNL since 1977. The goal of the energy-tracking task is to accurately assess the energy savings impact of OIT-developed technologies. In previous years, information on OIT-sponsored technologies existed in a variety of forms--first as a hardcopy, then electronically in several spreadsheet formats that existed in multiple software programs. The TBRS was created in 1993 for OIT and was based on information collected in all previous years from numerous industrial contacts, vendors, and plants that have installed OIT-sponsored technologies. The TBRS contains information on technologies commercialized between 1977 and the present, as well as information on emerging technologies in the late development/early commercialization stage of the technology life cycle. For each technology, details on the number of units sold and the energy saved are available on a year-by-year basis. Information regarding environmental benefits, productivity and competitiveness benefits, or impact that the technology may have had on employment is also available.

  7. Implementation of Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.; Kamp, David A.; Isaacson, Alan F.

    2000-01-01

    Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

  8. Integrating Records Management (RM) and Information Technology (IT)

    SciTech Connect

    NUSBAUM,ANNA W.; CUSIMANO,LINDA J.

    2000-03-02

    Records Managers are continually exploring ways to integrate their services with those offered by Information Technology-related professions to capitalize on the advantages of providing customers a total solution to managing their records and information. In this day and age, where technology abounds, there often exists a fear on the part of records management that this integration will result in a loss of identity and the focus of one's own mission - a fear that records management may become subordinated to the fast-paced technology fields. They need to remember there is strength in numbers and it benefits RM, IT, and the customer when they can bring together the unique offerings each possess to reach synergy for the benefit of all the corporations. Records Managers, need to continually strive to move ''outside the records management box'', network, expand their knowledge, and influence the IT disciplines to incorporate the concept of ''management'' into their customer solutions.

  9. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  10. Electronic Record Systems and Individual Privacy. Federal Government Information Technology.

    ERIC Educational Resources Information Center

    Congress of the U.S., Washington, DC. Office of Technology Assessment.

    This report considers the privacy issues raised by the growth of the new technology being applied to the personal information collected, maintained, and disseminated by the Federal Government. Four major areas are addressed: (1) technological developments relevant to government record systems; (2) current and prospective Federal agency use of…

  11. Polarization of ferroelectric films through electrolyte.

    PubMed

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T; Forchheimer, Robert; Berggren, Magnus

    2016-03-16

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced--in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures--and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments.

  12. Polarization of ferroelectric films through electrolyte.

    PubMed

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T; Forchheimer, Robert; Berggren, Magnus

    2016-03-16

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced--in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures--and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments. PMID:26885704

  13. Polarization of ferroelectric films through electrolyte

    NASA Astrophysics Data System (ADS)

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T.; Forchheimer, Robert; Berggren, Magnus

    2016-03-01

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced—in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures—and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments.

  14. Molecule-displacive ferroelectricity in organic supramolecular solids

    NASA Astrophysics Data System (ADS)

    Ye, Heng-Yun; Zhang, Yi; Noro, Shin-Ichiro; Kubo, Kazuya; Yoshitake, Masashi; Liu, Zun-Qi; Cai, Hong-Ling; Fu, Da-Wei; Yoshikawa, Hirofumi; Awaga, Kunio; Xiong, Ren-Gen; Nakamura, Takayoshi

    2013-07-01

    Ferroelectricity is essential to many forms of current technology, ranging from sensors and actuators to optical or memory devices. In this circumstance, organic ferroelectrics are of particular importance because of their potential application in tomorrow's organic devices, and several pure organic ferroelectrics have been recently developed. However, some problems, such as current leakage and/or low working frequencies, make their application prospects especially for ferroelectric memory (FeRAM) not clear. Here, we describe the molecule-displacive ferroelectricity of supramolecular adducts of tartaric acid and 1,4-diazabicyclo[2.2.2]octane N,N'-dioxide. The adducts show large spontaneous polarization, high rectangularity of the ferroelectric hysteresis loops even at high operation frequency (10 kHz), and high performance in polarization switching up to 1 × 106 times without showing fatigue. It opens great perspectives in terms of applications, especially in organic FeRAM.

  15. Perovskite ferroelectric nanomaterials

    NASA Astrophysics Data System (ADS)

    Nuraje, Nurxat; Su, Kai

    2013-09-01

    In this review, the main concept of ferroelectricity of perovskite oxides and related materials at nanometer scale and existing difficulties in the synthesis of those nanocrystals are discussed. Important effects, such as depolarization field and size effect, on the existence of ferroelectricity in perovskite nanocrystals are deliberated. In the discussion of modeling works, different theoretical calculations are pinpointed focusing on their studies of lattice dynamics, phase transitions, new origin of ferroelectricity in nanostructures, etc. As the major part of this review, recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials, such as BaTiO3, PbTiO3, PbZrO3, and BiFeO3, are also scrutinized. Perspectives concerning the future direction of ferroelectric nanomaterials research and its potential applications in renewable energy, etc., are presented. This review provides an overview in this area and guidance for further studies in perovskite ferroelectric nanomaterials and their applications.In this review, the main concept of ferroelectricity of perovskite oxides and related materials at nanometer scale and existing difficulties in the synthesis of those nanocrystals are discussed. Important effects, such as depolarization field and size effect, on the existence of ferroelectricity in perovskite nanocrystals are deliberated. In the discussion of modeling works, different theoretical calculations are pinpointed focusing on their studies of lattice dynamics, phase transitions, new origin of ferroelectricity in nanostructures, etc. As the major part of this review, recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials, such as BaTiO3, PbTiO3, PbZrO3, and BiFeO3, are also scrutinized. Perspectives concerning the future direction of ferroelectric nanomaterials research and its potential applications in renewable

  16. Chemistry of ferroelectric surfaces.

    PubMed

    Garrity, K; Kolpak, A M; Ismail-Beigi, S; Altman, E I

    2010-07-20

    It has been recognized since the 1950s that the polar and switchable nature of ferroelectric surfaces can potentially lead to polarization direction-dependent surface chemistry. Recent theoretical studies and advances in growing high quality epitaxial ferroelectric thin films have motivated a flurry of experimental studies aimed at creating surfaces with switchable adsorption and catalytic properties, as well as films whose polarization direction switches depending on the gas phase environment. This research news article briefly reviews the key findings of these studies. These include observations that the adsorption strengths, and in certain cases the activation energies for reactions, of polar molecules on the surfaces of ferroelectric materials are sensitive to the polarization direction. For bare ferroelectric surfaces, the magnitudes of these differences are not large, but are still comparable to the energy barrier required to switch the polarization of approximately 10 nm thick films. Highlights of a recent study where chemical switching of a thin film ferroelectric was demonstrated are presented. Attempts to use the ferroelectric polarization to influence the behavior of supported catalytic metals will also be described. It will be shown that the tendency of the metals to cluster into particles makes it difficult to alter the chemical properties of the metal surface, since it is separated from the ferroelectric by several layers of metal atoms. An alternate approach to increasing the reactivity of ferroelectric surfaces is suggested that involves modifying the surface with atoms that bind strongly to the surface and thus remain atomically dispersed.

  17. Review of past, present, and future of recording technology

    NASA Astrophysics Data System (ADS)

    Al-Jibouri, Abdul-Rahman

    2003-03-01

    The revolution of information storage and recording has been advanced significantly over the past two decades. Since the development of computers in early 1950s by IBM, the data (information) was stored on magnetic disc by inducing magnetic flux to define the pit direction. The first disc was developed by IBM with diameter of 25inch to store around 10 kByte. After four decades, the disc drive has become more advanced by reducing the drive size, increasing ariel density and cost reduction. The introduction of new computer operating systems and the Internet resulted in the need to develop high ariel density in the 1990s. Therefore, the disc drive manufacturers were pushed harder to develop new technologies at low cost to survive the competitive market. The disc drives, which are based on media (where the data/information is stored) and the head (which will write and read data/information). The head and disc are separated and with the current technology the spacing between the disc and head is about 40nm. A new technology based on magnetic recording was developed to serve the audio market. This technology is called magnetic type, it is similar to the disc drive, but the media is based on tape rather than rigid disc. Another difference being the head and media are in direct contact. Magnetic tape was developed for audio application and a few years later this technology was extended to allow and accept another technology, called video. This allows consumers to record and view movies in their home. The magnetic tape also used the computer industries for back up data. Magnetic tape is still used in computers and has advanced further over the past decade, companies like Quantum Corp has developed digital linear tape.

  18. Flexible ferroelectric organic crystals

    NASA Astrophysics Data System (ADS)

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity--the properties that originate from their non-centrosymmetric crystal lattice--but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  19. Flexible ferroelectric organic crystals

    PubMed Central

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-01-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity—the properties that originate from their non-centrosymmetric crystal lattice—but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals. PMID:27734829

  20. Progress Toward Demonstrating a High Performance Optical Tape Recording Technology

    NASA Technical Reports Server (NTRS)

    Oakley, W. S.

    1996-01-01

    This paper discusses the technology developments achieved during the first year of a program to develop a high performance digital optical tape recording device using a solid state, diode pumped, frequency doubled green laser source. The goal is to demonstrate, within two years, useful read/write data transfer rates to at least 100 megabytes per second and a user capacity of up to one terabyte per cartridge implemented in a system using a '3480' style mono-reel tape cartridge.

  1. Ferroelectric switching of elastin

    PubMed Central

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  2. Emission from ferroelectric cathodes

    SciTech Connect

    Sampayan, S.E.; Caporaso, G.J.; Holmes, C.L.; Lauer, E.J.; Prosnitz, D.; Trimble, D.O.; Westenskow, G.A.

    1993-05-17

    We have recently initiated an investigation of electron emission from ferroelectric cathodes. Our experimental apparatus consisted of an electron diode and a 250 kV, 12 ohm, 70 ns pulsed high voltage power source. A planar triode modulator driven by a synthesized waveform generator initiates the polarization inversion and allows inversion pulse tailoring. The pulsed high voltage power source is capable of delivering two high voltage pulses within 50 ns of each other and is capable of operating at a sustained repetition rate of 5 Hz. Our initial measurements indicate that emission current densities above the Child-Langmuir Space Charge Limit are possible. We explain this effect to be based on a non-zero initial energy of the emitted electrons. We also determined that this effect is strongly coupled to relative timing between the inversion pulse and application of the main anode-cathode pulse. We also have initiated brightness measurements of the emitted beam. As in our previous measurements at this Laboratory, we performed the measurement using a pepper pot technique. Beam-let profiles are recorded with a fast phosphor and gated cameras. We describe our apparatus and preliminary measurements.

  3. Super Stable Ferroelectrics with High Curie Point

    PubMed Central

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  4. Super Stable Ferroelectrics with High Curie Point

    NASA Astrophysics Data System (ADS)

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  5. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  6. Investigation of polycrystalline ferroelectric tunnel junction

    NASA Astrophysics Data System (ADS)

    Hou, Pengfei; Wang, Jinbin; Zhong, Xiangli

    2016-07-01

    Ferroelectric tunnel junction (FTJ) is a breakthrough for addressing the nondestructive read in the ferroelectric random access memories. However, FTJs with nearly ideal characteristics have only been demonstrated on perovskite heterostructures that are deposited on closely lattice-matched and non-silicon substrates, or silicon substrates with epitaxial multilayer. In order to promote the application of FTJs, we develop a polycrystalline FTJ with ultrathin bottom electrode, in which the resistance variations exceed two orders of magnitude. And we achieve two stable logic states written and read easily using voltage pulses. Especially the device integrates with the silicon technology in modern microelectronics. Our results suggest new opportunities for ferroelectrics as nonvolatile resistive switching memory.

  7. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-07

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  8. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  9. Technological trends in health care: electronic health record.

    PubMed

    Abraham, Sam

    2010-01-01

    The most relevant technological trend affecting health care organizations and physician services is the electronic health record (EHR). Billions of dollars from the federal government stimulus bill are available for investment toward EHR. Based on the government directives, it is evident EHR has to be a high-priority technological intervention in health care organizations. Addressed in the following pages are the effects of the EHR trend on financial and human resources; analysis of advantages and disadvantages of EHR; action steps involved in implementing EHR, and a timeline for implementation. Medical facilities that do not meet the timetable for using EHR will likely experience reduction of Medicare payments. This article also identifies the strengths, weaknesses, opportunities, and threats of the EHR and steps to be taken by hospitals and physician medical groups to receive stimulus payment.

  10. Ferroelectricity in spiral magnets.

    PubMed

    Mostovoy, Maxim

    2006-02-17

    It was recently observed that the ferroelectrics showing the strongest sensitivity to an applied magnetic field are spiral magnets. We present a phenomenological theory of inhomogeneous ferroelectric magnets, which describes their thermodynamics and magnetic field behavior, e.g., dielectric susceptibility anomalies at magnetic transitions and sudden flops of electric polarization in an applied magnetic field. We show that electric polarization can also be induced at domain walls and that magnetic vortices carry electric charge. PMID:16606047

  11. Losses in Ferroelectric Materials

    PubMed Central

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  12. Magnetic Recording Media Technology for the Tb/in2 Era"

    ScienceCinema

    Bertero, Gerardo [Western Digital

    2016-07-12

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  13. Magnetic Recording Media Technology for the Tb/In2 Era

    SciTech Connect

    Bertero, Gerardo

    2010-04-07

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  14. Highly Efficient Red-Light Emission in An Organic-Inorganic Hybrid Ferroelectric: (Pyrrolidinium)MnCl₃.

    PubMed

    Zhang, Yi; Liao, Wei-Qiang; Fu, Da-Wei; Ye, Heng-Yun; Chen, Zhong-Ning; Xiong, Ren-Gen

    2015-04-22

    Luminescence of ferroelectric materials is one important property for technological applications, such as low-energy electron excitation. However, the vast majority of doped inorganic ferroelectric materials have low luminescent efficiency. The past decade has envisaged much progress in the design of both ferroelectric and luminescent organic-inorganic hybrid complexes for optoelectronic applications. The combination of ferroelectricity and luminescence within organic-inorganic hybrids would lead to a new type of luminescent ferroelectric multifunctional materials. We herein report a hybrid molecular ferroelectric, (pyrrolidinium)MnCl3, which exhibits excellent ferroelectricity with a saturation polarization of 5.5 μC/cm(2) as well as intense red luminescence with high quantum yield of 56% under a UV excitation. This finding may extend the application of organic-inorganic hybrid compounds to the field of ferroelectric luminescence and/or multifunctional devices.

  15. Flexoelectricity in Nanoscale Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Catalan, Gustau

    2012-02-01

    All ferroelectrics are piezoelectric and thus have an intrinsic coupling between polarization and strain. There exists an additional electromechanical coupling, however, between polarization and strain gradients. Strain gradients are intrinsically vectorial fields and, therefore, they can in principle be used to modify both the orientation and the sign of the polarization, thanks to the coupling known as flexoelectricity. Flexoelectricity is possible even in paraelectric materials, but is generally stronger in ferroelectrics on account of their high permittivity (the flexoelectric coefficient is proportional to the dielectric constant). Moreover, strain gradients can be large at the nanoscale due to the smallness of the relaxation length and, accordingly, strong flexoelectric effects can be expected in nanoscale ferroelectrics. In this talk we will present two recent results that highlight the above features. In the first part, I will show how polarization tilting can be achieved in a nominally tetragonal ferroelectric (PbTiO3) thanks to the internal flexoelectric fields generated in nano-twinned epitaxial thin films. Flexoelectricity thus offers a purely physical means of achieving rotated polarizations, which are thought to be useful for enhanced piezoelectricity. In the second part, we will show how the large strain gradients generated by pushing the sharp tip of an atomic force microscope against the surface of a thin ferroelectric film can be used to actively switch its polarity by 180^o. This enables a new concept for ``multiferroic'' memory operation in which the memory bits are written mechanically and read electrically.

  16. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  17. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  18. Polarization fatigue of organic ferroelectric capacitors

    PubMed Central

    Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W. M.; de Leeuw, Dago M.

    2014-01-01

    The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 108 times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts. PMID:24861542

  19. Polarization fatigue of organic ferroelectric capacitors.

    PubMed

    Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W M; de Leeuw, Dago M

    2014-05-27

    The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 10(8) times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts.

  20. Design of a Multi-Level/Analog Ferroelectric Memory Device

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2006-01-01

    Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  1. Optical/ferroelectric characterization of BaTiO3 and PbTiO3 colloidal nanoparticles and their applications in hybrid materials technologies.

    PubMed

    Garbovskiy, Yuriy; Glushchenko, Anatoliy

    2013-08-01

    In this paper, we will explore how optical and ferroelectric properties of the stressed ferroelectric nanoparticles prepared through ball milling set a limit on the performance of optical and electro-optical devices based on such materials. It was found that suspensions of BaTiO3 nanoparticles exhibit a blue shift in the optical band gap with a decrease in particle size. The optical band gap of PbTiO3 nanoparticles is not affected by the milling time. Polarization switching is composed of slow and fast components. A slow component is threshold-less and is caused by the particle reorientation while a fast component has a threshold, and its rise time is inversely proportional to the electric field. The absorption edge of these suspensions accounts for the applications in the near UV range, while kinetics of the polarization switching governs the speed of electro-optical devices.

  2. 78 FR 17722 - Technological Upgrades to Registration and Recordation Functions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-22

    ...., IPTC for photography; ISRC for sound recordings; ONIX for books). Further, standards such as CISAC's....g., IPTC for photography; ISRC for sound recordings; ONIX for books); (4) data storage and...

  3. Discovery of stable skyrmionic state in ferroelectric nanocomposites

    PubMed Central

    Nahas, Y.; Prokhorenko, S.; Louis, L.; Gui, Z.; Kornev, I.; Bellaiche, L.

    2015-01-01

    Non-coplanar swirling field textures, or skyrmions, are now widely recognized as objects of both fundamental interest and technological relevance. So far, skyrmions were amply investigated in magnets, where due to the presence of chiral interactions, these topological objects were found to be intrinsically stabilized. Ferroelectrics on the other hand, lacking such chiral interactions, were somewhat left aside in this quest. Here we demonstrate, via the use of a first-principles-based framework, that skyrmionic configuration of polarization can be extrinsically stabilized in ferroelectric nanocomposites. The interplay between the considered confined geometry and the dipolar interaction underlying the ferroelectric phase instability induces skyrmionic configurations. The topological structure of the obtained electrical skyrmion can be mapped onto the topology of domain-wall junctions. Furthermore, the stabilized electrical skyrmion can be as small as a few nanometers, thus revealing prospective skyrmion-based applications of ferroelectric nanocomposites. PMID:26436432

  4. Domains in Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Gregg, Marty

    2010-03-01

    Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device

  5. Molecular ferroelectrics: where electronics meet biology

    PubMed Central

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-01-01

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by overview on the fundamentals of ferroelectricity. Latest development in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also noted. PMID:24018952

  6. Molecular ferroelectrics: where electronics meet biology.

    PubMed

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  7. Ferroelectric tunnel memristor.

    PubMed

    Kim, D J; Lu, H; Ryu, S; Bark, C-W; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-11-14

    Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height. PMID:23039785

  8. Ferroelectric tunnel memristor.

    PubMed

    Kim, D J; Lu, H; Ryu, S; Bark, C-W; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-11-14

    Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height.

  9. Super-crystals in composite ferroelectrics

    PubMed Central

    Pierangeli, D.; Ferraro, M.; Di Mei, F.; Di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; DelRe, E.

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies. PMID:26907725

  10. Super-crystals in composite ferroelectrics.

    PubMed

    Pierangeli, D; Ferraro, M; Di Mei, F; Di Domenico, G; de Oliveira, C E M; Agranat, A J; DelRe, E

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium-lithium-tantalate-niobate with micrometric lattice constant, 10(4) times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies.

  11. Super-crystals in composite ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pierangeli, D.; Ferraro, M.; di Mei, F.; di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; Delre, E.

    2016-02-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium-lithium-tantalate-niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies.

  12. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    SciTech Connect

    Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam; Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka

    2014-09-15

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

  13. K-Band Reflectarray Antenna Based on Ferroelectric Thin Films: What Have We Learned so Far

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; Romanofsky, Robert; Mueller, Carl H.; VanKeuls, Fred

    2002-01-01

    The Applied RF Technology Branch of the NASA Glenn Research Center, Cleveland, Ohio, has an on-going effort in the area of thin film ferroelectric technology for microwave applications. Particular attention has been given to developing ferroelectric phase shifters for the implementation and experimental demonstration of an electronically steerable reflectarray antenna. In the process of optimizing these material to fit the implementation requirements of the aforementioned antenna, we have accumulated a great deal of information and knowledge in areas such as the effect of the composition of the ferroelectric thin films on phase shifter performance, self assembled monolayers (SAMs) in the metallic/ferroelectric interface and their impact on phase shifter performance, correlation between microstructure and microwave properties, and the effect of selective etching on the overall performance of a thin film-ferroelectric based microwave component, amongst others. We will discuss these issues and will provide an up-dade of the current development status of the reflect-array antenna.

  14. Using Tablet Technology and Recording Software to Enhance Pedagogy

    ERIC Educational Resources Information Center

    Radosevich, David J.; Kahn, Patricia

    2006-01-01

    A key benefit of information technology in educational settings is its ability to support engaged, interactive learning experiences consistent with constructivist principles. At the same time, educators are continually searching for low threshold technologies that integrate well in traditional learning environments, that do not require a high…

  15. Conduction at a ferroelectric interface

    SciTech Connect

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

  16. Conduction at a ferroelectric interface

    DOE PAGES

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

  17. Promoting Independence through Assistive Technology: Evaluating Audio Recorders to Support Grocery Shopping

    ERIC Educational Resources Information Center

    Bouck, Emily C.; Satsangi, Rajiv; Bartlett, Whitney; Weng, Pei-Lin

    2012-01-01

    In light of a positive research base regarding technology-based self-operating prompting systems (e.g., iPods), yet a concern about the sustainability of such technologies after a research project is completed, this study sought to explore the effectiveness and efficiency of an audio recorder, a low-cost, more commonly accessible technology to…

  18. Digital Recording Technology in the Writing Classroom: Sampling as Citing

    ERIC Educational Resources Information Center

    Duffy, W. Keith

    2004-01-01

    For the last few years, the author has been implementing a pedagogy that infuses musical composition--specifically the recording of electronic music--into his first-year composition courses. The author and his students have been quite surprised by the theoretical and practical connections that exist between the production of popular electronic…

  19. Isotopic, Ecological and Technological Investigations of the Land Snail Record

    ERIC Educational Resources Information Center

    Faber, Meredith L.

    2012-01-01

    In the ever-evolving landscape of the natural world, change is the only constant. Investigating how life accommodates that change can provide valuable insights into the biological, ecological and geological history of our planet. The fossil record is replete with examples of organisms which failed to survive in the wake of ongoing environmental…

  20. Ferroelectricity with Ferromagnetic Moment in Orthoferrites

    NASA Astrophysics Data System (ADS)

    Tokunaga, Yusuke

    2010-03-01

    Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

  1. Advances in Processing of Bulk Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Galassi, Carmen

    The development of ferroelectric bulk materials is still under extensive investigation, as new and challenging issues are growing in relation to their widespread applications. Progress in understanding the fundamental aspects requires adequate technological tools. This would enable controlling and tuning the material properties as well as fully exploiting them into the scale production. Apart from the growing number of new compositions, interest in the first ferroelectrics like BaTiO3 or PZT materials is far from dropping. The need to find new lead-free materials, with as high performance as PZT ceramics, is pushing towards a full exploitation of bariumbased compositions. However, lead-based materials remain the best performing at reasonably low production costs. Therefore, the main trends are towards nano-size effects and miniaturisation, multifunctional materials, integration, and enhancement of the processing ability in powder synthesis. Also, in control of dispersion and packing, to let densification occur in milder conditions. In this chapter, after a general review of the composition and main properties of the principal ferroelectric materials, methods of synthesis are analysed with emphasis on recent results from chemical routes and cold consolidation methods based on the colloidal processing.

  2. Monte Carlo simulations of spontaneous ferroelectric order in discotic liquid crystals.

    PubMed

    Bose, Tushar Kanti; Saha, Jayashree

    2013-06-28

    The demonstration of a spontaneous macroscopic ferroelectric order in liquid phases in the absence of any long-range positional order is considered as an outstanding problem of great fundamental and technological interest. We report here off-lattice Monte Carlo simulations of a system of polar achiral disklike ellipsoids which spontaneously exhibit a novel ferroelectric nematic phase which is a liquid in three dimensions, considering attractive-repulsive pair interaction suitable for the anisotropic particles. At lower temperature, the ferroelectric nematic phase condenses to a ferroelectric hexagonal columnar fluid with an axial macroscopic polarization. A spontaneous ferroelectric order of dipolar origin is established here for the first time in columnar liquid crystals. Our study demonstrates that simple dipolar interactions are indeed sufficient to produce a class of novel ferroelectric fluids of essential interest. The present work reveals the structure-property relationship of achieving long searched ferroelectric liquid crystal phases and transitions between them, and we hope these findings will help in future development of technologically important fluid ferroelectric materials.

  3. Ferroelectric optical image comparator

    DOEpatents

    Butler, Michael A.; Land, Cecil E.; Martin, Stephen J.; Pfeifer, Kent B.

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  4. Ferroelectric optical image comparator

    DOEpatents

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  5. Measuring the evolution of the drivers of technological innovation in the patent record.

    PubMed

    Buchanan, Andrew; Packard, Norman H; Bedau, Mark A

    2011-01-01

    We argue that technology changes over time by an evolutionary process that is similar in important respects to biological evolution. The process is adaptive in the sense that technologies are selected because of their specific adaptive value and not at random, but this adaptive evolutionary process differs from the Darwinian process of random variation followed by natural selection. We find evidence for the adaptive evolution of technology in the US patent record, specifically, the public bibliographic information of all utility patents issued in the United States from 1976 through 2010. Patents record certain innovations in the evolution of technology. The 1976-2010 patent record is huge, containing almost four million patents. We use a patent's incoming citations to measure its impact on subsequent patented innovations. Weighting innovative impact by the dissimilarity between parent and child technologies reveals that many of the most fecund inventions are door-opening technologies that spawn innovations in widely diverse categories.

  6. Coupled ferromagnetism and ferroelectricity in superlattices of non-ferroelectric antiferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Burton, J. D.; Rogdakis, K.; Seo, J. W.; Viskadourakis, Z.; Wang, Y.; Ah Qune, L.; Choi, E.; Tsymbal, E.; Lee, J.; Panagopoulos, C.

    2013-03-01

    Complex oxide heterostructures present a promising avenue for the design of multifunctional properties which may find application in a variety of technological systems. In heterostructures composed of transition metal oxides the disruption introduced by an interface can affect the balance of the competing interactions among spins, charges and orbitals. This has led to the emergence of properties absent in the original building blocks of a heterostructure. We will report on the discovery of magnetically tunable ferroelectricity in artificial tri-layer superlattices consisting of non-ferroelectric and non-ferromagnetic components: NdMnO3/SrMnO3/LaMnO3. Ferroelectricity was observed below 40 K exhibiting strong tunability by superlattice periodicity. Furthermore, magnetoelectric coupling resulted in 150% magnetic modulation of the polarization. First-principles calculations indicate that broken space inversion symmetry and mixed valency give rise to the observed behavior. This discovery highlights the importance of tri-layered systems for the engineering of emergent properties in oxide heterostructures. 1 University of Nebraska - Lincoln, 2 Foundation for Research and Technology - Hellas, Heraklion, Greece, 3 Nanyang Technological University, Nanyang, Singapore, 4 Sungkyunkwan University, Suwon, Republic of Korea

  7. Ferroelectricity in corundum derivatives

    NASA Astrophysics Data System (ADS)

    Ye, Meng; Vanderbilt, David

    2016-04-01

    The search for new ferroelectric (FE) materials holds promise for broadening our understanding of FE mechanisms and extending the range of application of FE materials. Here we investigate a class of A B O3 and A2B B'O6 materials that can be derived from the X2O3 corundum structure by mixing two or three ordered cations on the X site. Most such corundum derivatives have a polar structure, but it is unclear whether the polarization is reversible, which is a requirement for a FE material. In this paper, we propose a method to study the FE reversal path of materials in the corundum derivative family. We first categorize the corundum derivatives into four classes and show that only two of these allow for the possibility of FE reversal. We then calculate the energy profile and energy barrier of the FE reversal path using first-principles density functional methods with a structural constraint. Furthermore, we identify several empirical measures that can provide a rule of thumb for estimating the energy barriers. Finally, the conditions under which the magnetic ordering is compatible with ferroelectricity are determined. These results lead us to predict several potentially new FE materials.

  8. Spectroscopic signature for ferroelectric ice

    NASA Astrophysics Data System (ADS)

    Wójcik, Marek J.; Gług, Maciej; Boczar, Marek; Boda, Łukasz

    2014-09-01

    Various forms of ice exist within our galaxy. Particularly intriguing type of ice - ‘ferroelectric ice' was discovered experimentally and is stable in temperatures below 72 K. This form of ice can generate enormous electric fields and can play an important role in planetary formation. In this letter we present Car-Parrinello simulation of infrared spectra of ferroelectric ice and compare them with spectra of hexagonal ice. Librational region of the spectra can be treated as spectroscopic signature of ice XI and can be of help to identify ferroelectric ice in the Universe.

  9. Aviation Maintenance Technology. General. G103 Fundamentals of Regulations, Publications, and Records. Instructor Material.

    ERIC Educational Resources Information Center

    Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

    These instructor materials for an aviation maintenance technology course contain three instructional modules. The modules cover the following topics: selecting and using regulations, publications, and records; documenting aircraft records; and exercising mechanic's privileges and limitations. Each module contains some or all of these nine basic…

  10. Students' Satisfaction and Valuation of Web-Based Lecture Recording Technologies

    ERIC Educational Resources Information Center

    Taplin, Ross H.; Low, Lee Hun; Brown, Alistair M.

    2011-01-01

    This paper explores students' satisfaction and valuation of web-based lecture recording technologies (WBLT) that enable students to download recordings of lectures they could not attend or wish to review for revision purposes. The study was undertaken among undergraduates and postgraduates in accounting at an Australian university. In addition to…

  11. I-V Characteristics of a Ferroelectric Field Effect Transistor

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen

    1999-01-01

    There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

  12. Negative-pressure-induced enhancement in a freestanding ferroelectric.

    PubMed

    Wang, Jin; Wylie-van Eerd, Ben; Sluka, Tomas; Sandu, Cosmin; Cantoni, Marco; Wei, Xian-Kui; Kvasov, Alexander; McGilly, Leo John; Gemeiner, Pascale; Dkhil, Brahim; Tagantsev, Alexander; Trodahl, Joe; Setter, Nava

    2015-10-01

    Ferroelectrics are widespread in technology, being used in electronics and communications, medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired. Recent developments have exploited ultrathin epitaxial films on lattice-mismatched substrates, imposing tensile or compressive biaxial strain, to enhance ferroelectric properties. Much larger hydrostatic compression can be achieved by diamond anvil cells, but hydrostatic tensile stress is regarded as unachievable. Theory and ab initio treatments predict enhanced properties for perovskite ferroelectrics under hydrostatic tensile stress. Here we report negative-pressure-driven enhancement of the tetragonality, Curie temperature and spontaneous polarization in freestanding PbTiO3 nanowires, driven by stress that develops during transformation of the material from a lower-density crystal structure to the perovskite phase. This study suggests a simple route to obtain negative pressure in other materials, potentially extending their exploitable properties beyond their present levels.

  13. Tunnel electroresistance through organic ferroelectrics

    PubMed Central

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  14. Ferroelectric capacitor with reduced imprint

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  15. Tunnel electroresistance through organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-05-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

  16. Tunnel electroresistance through organic ferroelectrics.

    PubMed

    Tian, B B; Wang, J L; Fusil, S; Liu, Y; Zhao, X L; Sun, S; Shen, H; Lin, T; Sun, J L; Duan, C G; Bibes, M; Barthélémy, A; Dkhil, B; Garcia, V; Meng, X J; Chu, J H

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  17. 75 FR 1446 - Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... ADMINISTRATION Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary... Supplemental Security Income (SSI) payments on the basis of disability, and we expect this trend to continue..., underscores our need to process cases more efficiently by using advanced technologies. Applicants...

  18. Ferroelectric infrared detector and method

    DOEpatents

    Lashley, Jason Charles; Opeil, Cyril P.; Smith, James Lawrence

    2010-03-30

    An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a .lamda. shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

  19. Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

    NASA Technical Reports Server (NTRS)

    VanKeuls, Frederick W.

    1999-01-01

    Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

  20. Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.

    PubMed

    Vlasin, Ondrej; Casals, Blai; Dix, Nico; Gutiérrez, Diego; Sánchez, Florencio; Herranz, Gervasi

    2015-01-01

    We have imaged optically the spatial distributions of ferroelectricity and piezoelectricity at the diffraction limit. Contributions to the birefringence from electro-optics--linked to ferroelectricity--as well as strain--arising from converse piezoelectric effects--have been recorded simultaneously in a BaTiO3 thin film. The concurrent recording of electro-optic and piezo-optic mappings revealed that, far from the ideal uniformity, the ferroelectric and piezoelectric responses were strikingly inhomogeneous, exhibiting significant fluctuations over the scale of the micrometer. The optical methods here described are appropriate to study the variations of these properties simultaneously, which are of great relevance when ferroelectrics are downscaled to small sizes for applications in data storage and processing. PMID:26522345

  1. Ferroelectric instability under screened Coulomb interactions.

    PubMed

    Wang, Yong; Liu, Xiaohui; Burton, J D; Jaswal, Sitaram S; Tsymbal, Evgeny Y

    2012-12-14

    We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO(3), we demonstrate that ferroelectric displacements are sustained up to the critical concentration of 0.11 electron per unit cell volume. This result is consistent with experimental observations and reveals that the ferroelectric phase and conductivity can coexist. Our investigations show that the ferroelectric instability requires only a short-range portion of the Coulomb force with an interaction range of the order of the lattice constant. These results provide a new insight into the origin of ferroelectricity in displacive ferroelectrics and open opportunities for using doped ferroelectrics in novel electronic devices. PMID:23368377

  2. HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zheng-Ran; Han, Zu-Yin; Jung, Hyung-Suk

    2016-10-01

    Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology. Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

  3. Study of the spatial resolution of laser thermochemical technology for recording diffraction microstructures

    SciTech Connect

    Veiko, V P; Korol'kov, V I; Poleshchuk, A G; Sametov, A R; Shakhno, E A; Yarchuk, M V

    2011-07-31

    The thermochemical method for recording data, which is based on local laser oxidation of a thin metal film with subsequent etching of the unirradiated region, is an alternative to laser photolithography and direct laser removal of the film material. This recording technology is characterised by the absence of thermal and hydrodynamic image distortions, as in the case of laser ablation, and the number of necessary technological operations is much smaller as compared with the photomask preparation in classical photolithography. The main field of application of the thermochemical technology is the fabrication of diffraction optical elements (DOEs), which are widely used in printers, bar-code readers, CD and DVD laser players, etc. The purpose of this study is to increase the resolution of thermochemical data recording on thin chromium films. (interaction of laser radiation with matter)

  4. [New technologies in primary care: people, machines, records, and networks. SESPAS Report 2012].

    PubMed

    Alfaro, Mercedes; Bonis, Julio; Bravo, Rafael; Fluiters, Enrique; Minué, Sergio

    2012-03-01

    The new technologies and the importance of their development in primary care are clear. Technology is important insofar as it helps to resolve practical problems that arise when attempts are made to improve patient care. Many applications can be found under the heading of "new information and communication technologies" in healthcare, but the present article focusses on two of the most significant examples: the electronic health record and the Internet, bearing in mind that the aims being sought and the people using these applications are more significant than the technologies themselves. PMID:22336322

  5. [New technologies in primary care: people, machines, records, and networks. SESPAS Report 2012].

    PubMed

    Alfaro, Mercedes; Bonis, Julio; Bravo, Rafael; Fluiters, Enrique; Minué, Sergio

    2012-03-01

    The new technologies and the importance of their development in primary care are clear. Technology is important insofar as it helps to resolve practical problems that arise when attempts are made to improve patient care. Many applications can be found under the heading of "new information and communication technologies" in healthcare, but the present article focusses on two of the most significant examples: the electronic health record and the Internet, bearing in mind that the aims being sought and the people using these applications are more significant than the technologies themselves.

  6. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  7. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    PubMed Central

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  8. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

    PubMed

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  9. Ferroelectricity in undoped hafnium oxide

    SciTech Connect

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  10. Ferroelectricity in undoped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Polakowski, Patrick; Müller, Johannes

    2015-06-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4-20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization Pr of up to 10 μC cm-2 as well as a read/write endurance of 1.6 × 105 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  11. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-05-01

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  12. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    PubMed Central

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-01-01

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997

  13. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  14. Ferroelectric domain formation in discotic liquid crystals: Monte Carlo study on the influence of boundary conditions.

    PubMed

    Bose, Tushar Kanti; Saha, Jayashree

    2015-10-01

    The realization of a spontaneous macroscopic ferroelectric order in fluids of anisotropic mesogens is a topic of both fundamental and technological interest. Recently we demonstrated that a system of dipolar achiral disklike ellipsoids can exhibit long-searched ferroelectric liquid crystalline phases of dipolar origin. In the present work, extensive off-lattice Monte Carlo simulations are used to investigate the phase behavior of the system under the influences of the electrostatic boundary conditions that restrict any global polarization. We find that the system develops strongly ferroelectric slablike domains periodically arranged in an antiferroelectric fashion. Exploring the phase behavior at different dipole strengths, we find existence of the ferroelectric nematic and ferroelectric columnar order inside the domains. For higher dipole strengths, a biaxial phase is also obtained with a similar periodic array of ferroelectric slabs of antiparallel polarizations. We have studied the depolarizing effects by using both the Ewald summation and the spherical cutoff techniques. We present and compare the results of the two different approaches of considering the depolarizing effects in this anisotropic system. It is explicitly shown that the domain size increases with the system size as a result of considering a longer range of dipolar interactions. The system exhibits pronounced system size effects for stronger dipolar interactions. The results provide strong evidence to the novel understanding that the dipolar interactions are indeed sufficient to produce long-range ferroelectric order in anisotropic fluids.

  15. Ferroelectric order in liquid crystal phases of polar disk-shaped ellipsoids.

    PubMed

    Bose, Tushar Kanti; Saha, Jayashree

    2014-05-01

    The demonstration of a spontaneous macroscopic ferroelectric order in liquid phases in the absence of any long range positional order is considered an outstanding problem of both fundamental and technological interest. Recently, we reported that a system of polar achiral disklike ellipsoids can spontaneously exhibit a long searched ferroelectric nematic phase and a ferroelectric columnar phase with strong axial polarization. The major role is played by the dipolar interactions. The model system of interest consists of attractive-repulsive Gay-Berne oblate ellipsoids embedded with two parallel point dipoles positioned symmetrically on the equatorial plane of the ellipsoids. In the present work, we investigate in detail the profound effects of changing the separation between the two symmetrically placed dipoles and the strength of the dipoles upon the existence of different ferroelectric discotic liquid crystal phases via extensive off-lattice N-P-T Monte Carlo simulations. Ferroelectric biaxial phases are exhibited in addition to the uniaxial ferroelectric fluids where the phase biaxiality results from the dipolar interactions. The structures of all the ferroelectric configurations of interest are presented in detail. Simple phase diagrams are determined which include different polar and apolar discotic fluids generated by the system.

  16. Ferroelectric order in liquid crystal phases of polar disk-shaped ellipsoids

    NASA Astrophysics Data System (ADS)

    Bose, Tushar Kanti; Saha, Jayashree

    2014-05-01

    The demonstration of a spontaneous macroscopic ferroelectric order in liquid phases in the absence of any long range positional order is considered an outstanding problem of both fundamental and technological interest. Recently, we reported that a system of polar achiral disklike ellipsoids can spontaneously exhibit a long searched ferroelectric nematic phase and a ferroelectric columnar phase with strong axial polarization. The major role is played by the dipolar interactions. The model system of interest consists of attractive-repulsive Gay-Berne oblate ellipsoids embedded with two parallel point dipoles positioned symmetrically on the equatorial plane of the ellipsoids. In the present work, we investigate in detail the profound effects of changing the separation between the two symmetrically placed dipoles and the strength of the dipoles upon the existence of different ferroelectric discotic liquid crystal phases via extensive off-lattice N-P-T Monte Carlo simulations. Ferroelectric biaxial phases are exhibited in addition to the uniaxial ferroelectric fluids where the phase biaxiality results from the dipolar interactions. The structures of all the ferroelectric configurations of interest are presented in detail. Simple phase diagrams are determined which include different polar and apolar discotic fluids generated by the system.

  17. Ferroelectric Fluid Flow Control Valve

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  18. Terahertz sensing using ferroelectric nanowires.

    PubMed

    Herchig, R; Schultz, Kimberly; McCash, Kevin; Ponomareva, I

    2013-02-01

    Molecular dynamics simulations are used to study the interaction of ferroelectric nanowires with terahertz (THz) Gaussian-shaped pulses of electric field. The computational data indicate the existence of two interaction scenarios that are associated with 'lossless' and dissipative, or 'lossy', interaction mechanisms. A thermodynamical approach is used to analyze the computational data for a wide range of THz pulses. The analysis establishes the foundation for understanding the nanowires' response to the THz pulses and reveals the potential of ferroelectric nanowires to function as nanoscale sensors of THz radiation. Various aspects of this THz nanosensing are analyzed and discussed.

  19. Atomistic simulations of caloric effects in ferroelectrics

    NASA Astrophysics Data System (ADS)

    Lisenkov, Sergey; Ponomareva, Inna

    2013-03-01

    The materials that exhibit large caloric effects have emerged as promising candidates for solid-state refrigeration which is an energy-efficient and environmentally friendly alternative to the conventional refrigeration technology. However, despite recent ground breaking discoveries of giant caloric effects in some materials they appear to remain one of nature's rarities. Here we use atomistic simulations to study electrocaloric and elastocaloric effects in Ba0.5Sr0.5TiO3 and PbTiO3 ferroelectrics. Our study reveals the intrinsic features of such caloric effects in ferroelectrics and their potential to exhibit giant caloric effects. Some of the findings include the coexistence of negative and positive electrocaloric effects in one material and an unusual field-driven transition between them as well as the coexistence of multiple giant caloric effects in Ba0.5Sr0.5TiO3 alloys. These findings could potentially lead to new paradigms for cooling devices. This work is partially supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under award DE-SC0005245.

  20. Polar Superhelices in Ferroelectric Chiral Nanosprings

    NASA Astrophysics Data System (ADS)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jian-Shan; Wang, Jie; Kitamura, Takayuki

    2016-10-01

    Topological objects of nontrivial spin or dipolar field textures, such as skyrmions, merons, and vortices, interacting with applied external fields in ferroic materials are of great scientific interest as an intriguing playground of unique physical phenomena and novel technological paradigms. The quest for new topological configurations of such swirling field textures has primarily been done for magnets with Dzyaloshinskii-Moriya interactions, while the absence of such intrinsic chiral interactions among electric dipoles left ferroelectrics aside in this quest. Here, we demonstrate that a helical polarization coiled into another helix, namely a polar superhelix, can be extrinsically stabilized in ferroelectric nanosprings. The interplay between dipolar interactions confined in the chiral geometry and the complex strain field of mixed bending and twisting induces the superhelical configuration of electric polarization. The geometrical structure of the polar superhelix gives rise to electric chiralities at two different length scales and the coexistence of three order parameters, i.e., polarization, toroidization, and hypertoroidization, both of which can be manipulated by homogeneous electric and/or mechanical fields. Our work therefore provides a new geometrical configuration of swirling dipolar fields, which offers the possibility of multiple order-parameters, and electromechanically controllable dipolar chiralities and associated electro-optical responses.

  1. Polar Superhelices in Ferroelectric Chiral Nanosprings

    PubMed Central

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jian-Shan; Wang, Jie; Kitamura, Takayuki

    2016-01-01

    Topological objects of nontrivial spin or dipolar field textures, such as skyrmions, merons, and vortices, interacting with applied external fields in ferroic materials are of great scientific interest as an intriguing playground of unique physical phenomena and novel technological paradigms. The quest for new topological configurations of such swirling field textures has primarily been done for magnets with Dzyaloshinskii-Moriya interactions, while the absence of such intrinsic chiral interactions among electric dipoles left ferroelectrics aside in this quest. Here, we demonstrate that a helical polarization coiled into another helix, namely a polar superhelix, can be extrinsically stabilized in ferroelectric nanosprings. The interplay between dipolar interactions confined in the chiral geometry and the complex strain field of mixed bending and twisting induces the superhelical configuration of electric polarization. The geometrical structure of the polar superhelix gives rise to electric chiralities at two different length scales and the coexistence of three order parameters, i.e., polarization, toroidization, and hypertoroidization, both of which can be manipulated by homogeneous electric and/or mechanical fields. Our work therefore provides a new geometrical configuration of swirling dipolar fields, which offers the possibility of multiple order-parameters, and electromechanically controllable dipolar chiralities and associated electro-optical responses. PMID:27713540

  2. Dynamics of relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pirc, R.; Blinc, R.; Bobnar, V.

    2001-02-01

    We study a dynamic model of relaxor ferroelectrics based on the spherical random-bond-random-field model and the Langevin equations of motion written in the representation of eigenstates of the random interaction matrix. The solution to these equations is obtained in the long-time limit where the system reaches an equilibrium state in the presence of random local electric fields. The complex dynamic linear and third-order nonlinear susceptibilities χ1(ω) and χ3(ω), respectively, are calculated as functions of frequency and temperature. In analogy with the static case, the dynamic model predicts a narrow frequency dependent peak in χ3(T,ω), which mimics a transition into a glasslike state, but a real transition never occurs in the case of nonzero random fields. A freezing transition can be described by introducing the empirical Vogel-Fulcher (VF) behavior of the relaxation time τ in the equations of motion, with the VF temperature T0 playing the role of the freezing temperature Tf. The scaled third-order nonlinear susceptibility a'3(T,ω)=χ¯'3(ω)/χ¯'1(3ω)χ¯'1(ω)3, where the bar denotes a statistical average over T0, shows a crossover from paraelectriclike to glasslike behavior in the quasistatic regime above Tf. The shape of χ¯1(ω) and χ¯3(ω)-and thus of a'3(T,ω)-depends crucially on the probability distribution of τ. It is shown that for a linear distribution of VF temperatures T0, a'3(T,ω) has a peak near Tf and shows a strong frequency dispersion in the low-temperature region.

  3. A Community Health Record: Improving Health Through Multisector Collaboration, Information Sharing, and Technology.

    PubMed

    King, Raymond J; Garrett, Nedra; Kriseman, Jeffrey; Crum, Melvin; Rafalski, Edward M; Sweat, David; Frazier, Renee; Schearer, Sue; Cutts, Teresa

    2016-01-01

    We present a framework for developing a community health record to bring stakeholders, information, and technology together to collectively improve the health of a community. It is both social and technical in nature and presents an iterative and participatory process for achieving multisector collaboration and information sharing. It proposes a methodology and infrastructure for bringing multisector stakeholders and their information together to inform, target, monitor, and evaluate community health initiatives. The community health record is defined as both the proposed framework and a tool or system for integrating and transforming multisector data into actionable information. It is informed by the electronic health record, personal health record, and County Health Ranking systems but differs in its social complexity, communal ownership, and provision of information to multisector partners at scales ranging from address to zip code. PMID:27609300

  4. A Community Health Record: Improving Health Through Multisector Collaboration, Information Sharing, and Technology

    PubMed Central

    Garrett, Nedra; Kriseman, Jeffrey; Crum, Melvin; Rafalski, Edward M.; Sweat, David; Frazier, Renee; Schearer, Sue; Cutts, Teresa

    2016-01-01

    We present a framework for developing a community health record to bring stakeholders, information, and technology together to collectively improve the health of a community. It is both social and technical in nature and presents an iterative and participatory process for achieving multisector collaboration and information sharing. It proposes a methodology and infrastructure for bringing multisector stakeholders and their information together to inform, target, monitor, and evaluate community health initiatives. The community health record is defined as both the proposed framework and a tool or system for integrating and transforming multisector data into actionable information. It is informed by the electronic health record, personal health record, and County Health Ranking systems but differs in its social complexity, communal ownership, and provision of information to multisector partners at scales ranging from address to zip code. PMID:27609300

  5. Hybridity as a process of technology's 'translation': customizing a national Electronic Patient Record.

    PubMed

    Petrakaki, Dimitra; Klecun, Ela

    2015-01-01

    This paper explores how national Electronic Patient Record (EPR) systems are customized in local settings and, in particular, how the context of their origin plays out with the context of their use. It shows how representations of healthcare organizations and of local clinical practice are built into EPR systems within a complex context whereby different stakeholder groups negotiate to produce an EPR package that aims to meet both local and generic needs. The paper draws from research into the implementation of the National Care Record Service, a part of the National Programme for Information Technology (NPfIT), in the English National Health Service (NHS). The paper makes two arguments. First, customization of national EPR is a distributed process that involves cycles of 'translation', which span across geographical, cultural and professional boundaries. Second, 'translation' is an inherently political process during which hybrid technology gets consolidated. The paper concludes, that hybrid technology opens up possibilities for standardization of healthcare. PMID:25461880

  6. New advanced technologies to provide decentralised and secure access to medical records: case studies in oncology.

    PubMed

    Quantin, Catherine; Coatrieux, Gouenou; Allaert, François André; Fassa, Maniane; Bourquard, Karima; Boire, Jean-Yves; de Vlieger, Paul; Maigne, Lydia; Breton, Vincent

    2009-08-07

    The main problem for health professionals and patients in accessing information is that this information is very often distributed over many medical records and locations. This problem is particularly acute in cancerology because patients may be treated for many years and undergo a variety of examinations. Recent advances in technology make it feasible to gain access to medical records anywhere and anytime, allowing the physician or the patient to gather information from an "ephemeral electronic patient record". However, this easy access to data is accompanied by the requirement for improved security (confidentiality, traceability, integrity, ...) and this issue needs to be addressed. In this paper we propose and discuss a decentralised approach based on recent advances in information sharing and protection: Grid technologies and watermarking methodologies. The potential impact of these technologies for oncology is illustrated by the examples of two experimental cases: a cancer surveillance network and a radiotherapy treatment plan. It is expected that the proposed approach will constitute the basis of a future secure "google-like" access to medical records.

  7. A wireless recording system that utilizes Bluetooth technology to transmit neural activity in freely moving animals.

    PubMed

    Hampson, Robert E; Collins, Vernell; Deadwyler, Sam A

    2009-09-15

    A new wireless transceiver is described for recording individual neuron firing from behaving rats utilizing Bluetooth transmission technology and a processor onboard for discrimination of neuronal waveforms and associated time stamps. This universal brain activity transmitter (UBAT) is attached to rodents via a backpack and amplifier headstage and can transmit 16 channels of captured neuronal firing data via a Bluetooth transceiver chip over very large and unconstrained distances. The onboard microprocessor of the UBAT allows flexible online control over waveform isolation criteria via transceiver instruction and the two-way communication capacity allows for closed-loop applications between neural events and behavioral or physiological processes which can be modified by transceiver instructions. A detailed description of the multiplexer processing of channel data as well as examples of neuronal recordings in different behavioral testing contexts is provided to demonstrate the capacity for robust transmission within almost any laboratory environment. A major advantage of the UBAT is the long transmission range and lack of object-based line of sight interference afforded by Bluetooth technology, allowing flexible recording capabilities within multiple experimental paradigms without interruption. Continuous recordings over very large distance separations from the monitor station are demonstrated providing experimenters with recording advantages not previously available with other telemetry devices.

  8. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode.

    PubMed

    Lee, Jiyoul; van Breemen, Albert J J M; Khikhlovskyi, Vsevolod; Kemerink, Martijn; Janssen, Rene A J; Gelinck, Gerwin H

    2016-04-15

    We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

  9. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode.

    PubMed

    Lee, Jiyoul; van Breemen, Albert J J M; Khikhlovskyi, Vsevolod; Kemerink, Martijn; Janssen, Rene A J; Gelinck, Gerwin H

    2016-01-01

    We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit. PMID:27080264

  10. Defect-mediated polarization switching in ferroelectrics and related materials: from mesoscopic mechanisms to atomistic control.

    PubMed

    Kalinin, Sergei V; Rodriguez, Brian J; Borisevich, Albina Y; Baddorf, Arthur P; Balke, Nina; Chang, Hye Jung; Chen, Long-Qing; Choudhury, Samrat; Jesse, Stephen; Maksymovych, Peter; Nikiforov, Maxim P; Pennycook, Stephen J

    2010-01-19

    The plethora of lattice and electronic behaviors in ferroelectric and multiferroic materials and heterostructures opens vistas into novel physical phenomena including magnetoelectric coupling and ferroelectric tunneling. The development of new classes of electronic, energy-storage, and information-technology devices depends critically on understanding and controlling field-induced polarization switching. Polarization reversal is controlled by defects that determine activation energy, critical switching bias, and the selection between thermodynamically equivalent polarization states in multiaxial ferroelectrics. Understanding and controlling defect functionality in ferroelectric materials is as critical to the future of oxide electronics and solid-state electrochemistry as defects in semiconductors are for semiconductor electronics. Here, recent advances in understanding the defect-mediated switching mechanisms, enabled by recent advances in electron and scanning probe microscopy, are discussed. The synergy between local probes and structural methods offers a pathway to decipher deterministic polarization switching mechanisms on the level of a single atomically defined defect.

  11. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

    NASA Astrophysics Data System (ADS)

    Lee, Jiyoul; van Breemen, Albert J. J. M.; Khikhlovskyi, Vsevolod; Kemerink, Martijn; Janssen, Rene A. J.; Gelinck, Gerwin H.

    2016-04-01

    We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

  12. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

    PubMed Central

    Lee, Jiyoul; van Breemen, Albert J. J. M.; Khikhlovskyi, Vsevolod; Kemerink, Martijn; Janssen, Rene A. J.; Gelinck, Gerwin H.

    2016-01-01

    We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit. PMID:27080264

  13. Frequency/phase agile microwave circuits on ferroelectric films

    NASA Astrophysics Data System (ADS)

    Romanofsky, Robert Raymond

    This work describes novel microwave circuits that can be tuned in either frequency or phase through the use of nonlinear dielectrics, specifically thin ferroelectric films. These frequency and phase agile circuits in many cases provide a new capability or offer the potential for lower cost alternatives in satellite and terrestrial communications and sensor applications. A brief introduction to nonlinear dielectrics and a summary of some of the special challenges confronting the practical insertion of ferroelectric technology into commercial systems is provided. A theoretical solution for the propagation characteristics of the multi-layer structures, with emphasis on a new type of phase shifter based on coupled microstrip, lines, is developed. The quasi-TEM analysis is based on a variational solution for line capacitance and an extension of coupled transmission line theory. It is shown that the theoretical model is applicable to a broad class of multi-layer transmission lines. The critical role that ferroelectric film thickness plays in loss and phase-shift is closely examined. Experimental data for both thin film BaxSr1-xTiO 3 phase shifters near room temperature and SMO3 phase shifters at cryogenic temperatures on MgO and LaAlO3 substrates is included. Some of these devices demonstrated an insertion loss of less than 5 dB at Ku-band with continuously variable phase shift in excess of 360 degrees. The performance of these devices is superior to the state-of-the-art semiconductor counterparts. Frequency and phase agile antenna prototypes including a microstrip patch that can operate at multiple microwave frequency bands and a new type of phased array antenna concept called the ferroelectric reflectarray are introduced. Modeled data for tunable microstrip patch antennas is presented for various ferroelectric film thickness. A prototype linear phased array, with a conventional beam-forming manifold, and an electronic controller is described. This is the first

  14. Fork gratings based on ferroelectric liquid crystals.

    PubMed

    Ma, Y; Wei, B Y; Shi, L Y; Srivastava, A K; Chigrinov, V G; Kwok, H-S; Hu, W; Lu, Y Q

    2016-03-21

    In this article, we disclose a fork grating (FG) based on the photo-aligned ferroelectric liquid crystal (FLC). The Digital Micro-mirror Device based system is used as a dynamic photomask to generated different holograms. Because of controlled anchoring energy, the photo alignment process offers optimal conditions for the multi-domain FLC alignment. Two different electro-optical modes namely DIFF/TRANS and DIFF/OFF switchable modes have been proposed where the diffraction can be switched either to no diffraction or to a completely black state, respectively. The FLC FG shows high diffraction efficiency and fast response time of 50µs that is relatively faster than existing technologies. Thus, the FLC FG may pave a good foundation toward optical vertices generation and manipulation that could find applications in a variety of devices. PMID:27136779

  15. Structural phase transition in ferroelectric glycine silver nitrate

    NASA Astrophysics Data System (ADS)

    Choudhury, Rajul Ranjan; Panicker, Lata; Chitra, R.; Sakuntala, T.

    2008-02-01

    The structural investigation of the ferroelectric phase transition in glycine silver nitrate has revealed that the transition at Tc=218 K is due to the displacement of the Ag + ions from the plane made by the carboxyl oxygens of glycine zwitterions coordinated to it. Since the transition takes place between two ordered structures the thermal anomaly at Tc is very weak, the transition enthalpy and transition entropy were found to be ΔH=6.6 J/mol and the transition entropy ΔS=0.03 J K mol respectively. These crystals are held together by a network of hydrogen bonds. In order to study these interactions the Raman spectrum of GSN was recorded and discussed in the light of ferroelectricity in glycine complexes in general.

  16. New Advanced Technologies to Provide Decentralised and Secure Access to Medical Records: Case Studies in Oncology

    PubMed Central

    Quantin, Catherine; Coatrieux, Gouenou; Allaert, François André; Fassa, Maniane; Bourquard, Karima; Boire, Jean-Yves; de Vlieger, Paul; Maigne, Lydia; Breton, Vincent

    2009-01-01

    The main problem for health professionals and patients in accessing information is that this information is very often distributed over many medical records and locations. This problem is particularly acute in cancerology because patients may be treated for many years and undergo a variety of examinations. Recent advances in technology make it feasible to gain access to medical records anywhere and anytime, allowing the physician or the patient to gather information from an “ephemeral electronic patient record”. However, this easy access to data is accompanied by the requirement for improved security (confidentiality, traceability, integrity, ...) and this issue needs to be addressed. In this paper we propose and discuss a decentralised approach based on recent advances in information sharing and protection: Grid technologies and watermarking methodologies. The potential impact of these technologies for oncology is illustrated by the examples of two experimental cases: a cancer surveillance network and a radiotherapy treatment plan. It is expected that the proposed approach will constitute the basis of a future secure “google-like” access to medical records. PMID:19718446

  17. Interlayer exchange coupling across a ferroelectric barrier.

    PubMed

    Zhuravlev, M Ye; Vedyayev, A V; Tsymbal, E Y

    2010-09-01

    A new magnetoelectric effect is predicted originating from the interlayer exchange coupling between two ferromagnetic layers separated by an ultrathin ferroelectric barrier. It is demonstrated that ferroelectric polarization switching driven by an external electric field leads to a sizable change in the interlayer exchange coupling. The effect occurs in asymmetric ferromagnet/ferroelectric/ferromagnet junctions due to a change in the electrostatic potential profile across the junction affecting the interlayer coupling. The predicted phenomenon indicates the possibility of switching the magnetic configuration by reversing the polarization of the ferroelectric barrier layer. PMID:21403276

  18. About the deformation of ferroelectric hystereses

    SciTech Connect

    Schenk, T. Yurchuk, E.; Mueller, S.; Schroeder, U.; Starschich, S.; Böttger, U.; Mikolajick, T.

    2014-12-15

    Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

  19. Ferroelectric Stirling-Cycle Refrigerator

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    A Stirling-cycle refrigerator has a three-pump configuration and pumping sequence, in which one pump serves as a compressor. one pump serves as an expander, and one pump serves as a displacer. The pumps are ferroelectrically actuated diaphragm pumps which are coordinated by synchronizing the ferroelectric-actuator voltages in such a way that the net effect of the displacer is to reduce the deleterious effect of dead space; that is, to circulate a greater fraction of the working fluid through the heat exchangers than would be possible by use of the compressor and expander alone. In addition. the displacer can be controlled separately to make the flow of working fluid in the heat exchangers turbulent (to increase the rate of transfer of heat at the cost of greater resistance to flow) or laminar (to decrease the resistance to flow at the cost of a lower heat-transfer rate).

  20. Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2007-01-01

    Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  1. Guide to the Records Relating to Science and Technology in the British Public Record Office: A RAMP Study.

    ERIC Educational Resources Information Center

    Jubb, Michael

    Prepared under contract with the International Council on Archives (ICA), this guide provides descriptions of all classes of public records held by the British Public Record Office (PRO) which are likely to contain scientific or technical information. The PRO is responsible for keeping and making available to the public those records of the…

  2. Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit

    PubMed Central

    Vlasin, Ondrej; Casals, Blai; Dix, Nico; Gutiérrez, Diego; Sánchez, Florencio; Herranz, Gervasi

    2015-01-01

    We have imaged optically the spatial distributions of ferroelectricity and piezoelectricity at the diffraction limit. Contributions to the birefringence from electro-optics –linked to ferroelectricity– as well as strain –arising from converse piezoelectric effects– have been recorded simultaneously in a BaTiO3 thin film. The concurrent recording of electro-optic and piezo-optic mappings revealed that, far from the ideal uniformity, the ferroelectric and piezoelectric responses were strikingly inhomogeneous, exhibiting significant fluctuations over the scale of the micrometer. The optical methods here described are appropriate to study the variations of these properties simultaneously, which are of great relevance when ferroelectrics are downscaled to small sizes for applications in data storage and processing. PMID:26522345

  3. Ferroelectric-dielectric tunable composites

    NASA Astrophysics Data System (ADS)

    Sherman, Vladimir O.; Tagantsev, Alexander K.; Setter, Nava; Iddles, David; Price, Tim

    2006-04-01

    The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. The analytical results for small dielectric concentration and relative tunability are obtained in terms of the traditional electrostatic consideration. The results for large tunability are obtained numerically. A method is proposed for the evaluation of the tunability and loss at large concentrations of the dielectric. The basic idea of the method is to reformulate the effective medium approach in terms of electrical energies stored and dissipated in the composite. The important practical conclusion of the paper is that, for random ferroelectric-dielectric composite, the addition of small amounts of a linear dielectric into the tunable ferroelectric results in an increase of the tunability of the mixture. The loss tangent of such composites is shown to be virtually unaffected by the addition of moderate amounts of the low-loss dielectric. The experimental data for (Ba,Sr)TiO3 based composites are analyzed in terms of the theory developed and shown to be in a reasonable agreement with the theoretical results.

  4. Health information technology: standards, implementation specifications, and certification criteria for electronic health record technology, 2014 edition; revisions to the permanent certification program for health information technology. Final rule.

    PubMed

    2012-09-01

    With this final rule, the Secretary of Health and Human Services adopts certification criteria that establish the technical capabilities and specify the related standards and implementation specifications that Certified Electronic Health Record (EHR) Technology will need to include to, at a minimum, support the achievement of meaningful use by eligible professionals, eligible hospitals, and critical access hospitals under the Medicare and Medicaid EHR Incentive Programs beginning with the EHR reporting periods in fiscal year and calendar year 2014. This final rule also makes changes to the permanent certification program for health information technology, including changing the program's name to the ONC HIT Certification Program. PMID:22946139

  5. Health information technology: standards, implementation specifications, and certification criteria for electronic health record technology, 2014 edition; revisions to the permanent certification program for health information technology. Final rule.

    PubMed

    2012-09-01

    With this final rule, the Secretary of Health and Human Services adopts certification criteria that establish the technical capabilities and specify the related standards and implementation specifications that Certified Electronic Health Record (EHR) Technology will need to include to, at a minimum, support the achievement of meaningful use by eligible professionals, eligible hospitals, and critical access hospitals under the Medicare and Medicaid EHR Incentive Programs beginning with the EHR reporting periods in fiscal year and calendar year 2014. This final rule also makes changes to the permanent certification program for health information technology, including changing the program's name to the ONC HIT Certification Program.

  6. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    NASA Technical Reports Server (NTRS)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  7. A diode for ferroelectric domain-wall motion

    PubMed Central

    Whyte, J.R.; Gregg, J.M.

    2015-01-01

    For over a decade, controlling domain-wall injection, motion and annihilation along nanowires has been the preserve of the nanomagnetics research community. Revolutionary technologies have resulted, like racetrack memory and domain-wall logic. Until recently, equivalent research in analogous ferroic materials did not seem important. However, with the discovery of sheet conduction, the control of domain walls in ferroelectrics has become vital for the future of what has been termed ‘domain-wall electronics'. Here we report the creation of a ferroelectric domain-wall diode, which allows a single direction of motion for all domain walls, irrespective of their polarity, under a series of alternating electric field pulses. The diode's sawtooth morphology is central to its function. Domain walls can move readily in the direction in which thickness increases gradually, but are prevented from moving in the other direction by the sudden thickness increase at the sawtooth edge. PMID:26059779

  8. Solving certain dental records problems with technology--the Canadian solution in the Thailand tsunami response.

    PubMed

    Sweet, David

    2006-05-15

    Each natural or man-made disaster presents a different set of circumstances and, as a consequence, each event results in new challenges for response teams. The very large number of deceased victims in recent tragic events is certainly one of the enormous challenges that can tax many different resources for identification specialists. But there are other significant challenges. And during the response, some of these seem insurmountable. They can be solved if we embrace technologies outside the customary disciplines. The Canadian identification effort following the December 2004 tsunami involved responders from several disciplines. Each discipline faced challenges in many different and special areas that were difficult and in some cases previously unseen. This paper presents examples of the ways the Canadian identification team used Internet technology to solve problems that were encountered when it became necessary to duplicate victims' dental, medical and personal records, and transport these records halfway around the world. Digital images of the records were saved at high resolution in multi-page PDF files. These images were made available to on-site personnel using an encrypted, password-secured website.

  9. Realization of a universal patient identifier for electronic medical records through biometric technology.

    PubMed

    Leonard, D C; Pons, Alexander P; Asfour, Shihab S

    2009-07-01

    The technology exists for the migration of healthcare data from its archaic paper-based system to an electronic one, and, once in digital form, to be transported anywhere in the world in a matter of seconds. The advent of universally accessible healthcare data has benefited all participants, but one of the outstanding problems that must be addressed is how the creation of a standardized nationwide electronic healthcare record system in the United States would uniquely identify and match a composite of an individual's recorded healthcare information to an identified individual patients out of approximately 300 million people to a 1:1 match. To date, a few solutions to this problem have been proposed that are limited in their effectiveness. We propose the use of biometric technology within our fingerprint, iris, retina scan, and DNA (FIRD) framework, which is a multiphase system whose primary phase is a multilayer consisting of these four types of biometric identifiers: 1) fingerprint; 2) iris; 3) retina scan; and 4) DNA. In addition, it also consists of additional phases of integration, consolidation, and data discrepancy functions to solve the unique association of a patient to their medical data distinctively. This would allow a patient to have real-time access to all of their recorded healthcare information electronically whenever it is necessary, securely with minimal effort, greater effectiveness, and ease. PMID:19273015

  10. Genetic data and electronic health records: a discussion of ethical, logistical and technological considerations

    PubMed Central

    Shoenbill, Kimberly; Fost, Norman; Tachinardi, Umberto; Mendonca, Eneida A

    2014-01-01

    Objective The completion of sequencing the human genome in 2003 has spurred the production and collection of genetic data at ever increasing rates. Genetic data obtained for clinical purposes, as is true for all results of clinical tests, are expected to be included in patients’ medical records. With this explosion of information, questions of what, when, where and how to incorporate genetic data into electronic health records (EHRs) have reached a critical point. In order to answer these questions fully, this paper addresses the ethical, logistical and technological issues involved in incorporating these data into EHRs. Materials and methods This paper reviews journal articles, government documents and websites relevant to the ethics, genetics and informatics domains as they pertain to EHRs. Results and discussion The authors explore concerns and tasks facing health information technology (HIT) developers at the intersection of ethics, genetics, and technology as applied to EHR development. Conclusions By ensuring the efficient and effective incorporation of genetic data into EHRs, HIT developers will play a key role in facilitating the delivery of personalized medicine. PMID:23771953

  11. Magnetic and Ferroelectric Anisotropy in Multiferroic FeVO4

    NASA Astrophysics Data System (ADS)

    Abdelhamid, Ehab; Dixit, Ambesh; Kimura, Kenta; Kimura, Tsuyoshi; Jayakumar, Onattu; Naik, Vaman; Naik, Ratna; Lawes, Gavin; Nadgorny, Boris

    FeVO4 has been studied as a model system for understanding the magnetoelectric interaction mechanisms in low symmetry multiferroics. Triclinic FeVO4 is characterized by two antiferromagnetic phase transitions, occurring at TN 1 = 22 K and TN 2 = 15 K, with the latter transition signaling a break in the space inversion symmetry, accompanied by the development of a non-collinear magnetic order which induces ferroelectricity. Earlier measurements on polycrystalline FeVO4 doped with magnetic (Cr and Mn) as well as non magnetic (Zn) dopants indicate the stability of the two antiferromagnetic transition temperatures. In this work, single crystals of both undoped and doped FeVO4 were grown from flux. To track the changes in lattice parameters induced by changing the doping concentration (measured by EDAX), XRD and Raman spectra were obtained. By recording the magnetization along two different crystal orientations, we were able to confirm the easy magnetic axis in this structure. Finally, we obtain the crystal's ferroelectric polarization along two different directions in an attempt to further understand the mechanism responsible for the ferroelectric transition. This work is supported by the NSF under DMR-1306449.

  12. Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Ahmad, M. M.; Kotru, P. N.

    2016-04-01

    Gel-grown single crystals of [Pr2(C3H2O4)3(H2O)6] exhibit remarkably flat habit faces, the most predominant being {110}. High-resolution x-ray diffraction analysis showed that the crystals are free from structural grain boundaries, which is the key requirement for single crystals for use in the microelectronics industry to serve as low-dielectric-constant ferroelectric material. The dielectric behavior recorded on {110} planes of single crystals shows that the crystal is ferroelectric with transition temperature T c = 135°C, which differs from the Curie-Weiss temperature T 0 by 2°C (T 0 < T c). Material in pellet form is shown to exhibit slightly different dielectric behavior. Polarization versus electric field confirms the ferroelectric behavior of the material. The dielectric behavior is also supported by the results of thermal studies, viz. thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The magnetic susceptibility and magnetic moment are calculated to be 30.045 × 10-6 emu and 3.092 BM, respectively.

  13. Ferroelectric translational antiphase boundaries in nonpolar materials.

    PubMed

    Wei, Xian-Kui; Tagantsev, Alexander K; Kvasov, Alexander; Roleder, Krystian; Jia, Chun-Lin; Setter, Nava

    2014-01-01

    Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from those of the domains themselves, leading to new exploitable phenomena. Even more exciting is that a non-ferroelectric material may have domain boundaries that are ferroelectric. Many materials possess translational antiphase boundaries. Such boundaries could be interesting entities to carry information if they were ferroelectric. Here we show first that antiphase boundaries in antiferroelectrics may possess ferroelectricity. We then identify these boundaries in the classical antiferroelectric lead zirconate and evidence their polarity by electron microscopy using negative spherical-aberration imaging technique. Ab initio modelling confirms the polar bi-stable nature of the walls. Ferroelectric antiphase boundaries could make high-density non-volatile memory; in comparison with the magnetic domain wall memory, they do not require current for operation and are an order of magnitude thinner.

  14. Ferroelectric translational antiphase boundaries in nonpolar materials

    PubMed Central

    Wei, Xian-Kui; Tagantsev, Alexander K.; Kvasov, Alexander; Roleder, Krystian; Jia, Chun-Lin; Setter, Nava

    2014-01-01

    Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from those of the domains themselves, leading to new exploitable phenomena. Even more exciting is that a non-ferroelectric material may have domain boundaries that are ferroelectric. Many materials possess translational antiphase boundaries. Such boundaries could be interesting entities to carry information if they were ferroelectric. Here we show first that antiphase boundaries in antiferroelectrics may possess ferroelectricity. We then identify these boundaries in the classical antiferroelectric lead zirconate and evidence their polarity by electron microscopy using negative spherical-aberration imaging technique. Ab initio modelling confirms the polar bi-stable nature of the walls. Ferroelectric antiphase boundaries could make high-density non-volatile memory; in comparison with the magnetic domain wall memory, they do not require current for operation and are an order of magnitude thinner. PMID:24398704

  15. Automated integration of continuous glucose monitor data in the electronic health record using consumer technology.

    PubMed

    Kumar, Rajiv B; Goren, Nira D; Stark, David E; Wall, Dennis P; Longhurst, Christopher A

    2016-05-01

    The diabetes healthcare provider plays a key role in interpreting blood glucose trends, but few institutions have successfully integrated patient home glucose data in the electronic health record (EHR). Published implementations to date have required custom interfaces, which limit wide-scale replication. We piloted automated integration of continuous glucose monitor data in the EHR using widely available consumer technology for 10 pediatric patients with insulin-dependent diabetes. Establishment of a passive data communication bridge via a patient's/parent's smartphone enabled automated integration and analytics of patient device data within the EHR between scheduled clinic visits. It is feasible to utilize available consumer technology to assess and triage home diabetes device data within the EHR, and to engage patients/parents and improve healthcare provider workflow. PMID:27018263

  16. Automated integration of continuous glucose monitor data in the electronic health record using consumer technology.

    PubMed

    Kumar, Rajiv B; Goren, Nira D; Stark, David E; Wall, Dennis P; Longhurst, Christopher A

    2016-05-01

    The diabetes healthcare provider plays a key role in interpreting blood glucose trends, but few institutions have successfully integrated patient home glucose data in the electronic health record (EHR). Published implementations to date have required custom interfaces, which limit wide-scale replication. We piloted automated integration of continuous glucose monitor data in the EHR using widely available consumer technology for 10 pediatric patients with insulin-dependent diabetes. Establishment of a passive data communication bridge via a patient's/parent's smartphone enabled automated integration and analytics of patient device data within the EHR between scheduled clinic visits. It is feasible to utilize available consumer technology to assess and triage home diabetes device data within the EHR, and to engage patients/parents and improve healthcare provider workflow.

  17. Towards the limit of ferroelectric nanosized grains

    NASA Astrophysics Data System (ADS)

    Roelofs, A.; Schneller, T.; Szot, K.; Waser, R.

    2003-02-01

    Ferroelectric random access memories are non-volatile, low voltage, high read/write speed devices which have been introduced into the market in recent years and which show the clear potential of future gigabit scale universal non-volatile memories. The ultimate limit of this concept will depend on the ferroelectric limit (synonymous superparaelectric limit), i.e. the size limit below which the ferroelectricity is quenched. While there are clear indications that 2D ferroelectric oxide films may sustain their ferroelectric polarization below 4 nm in thickness (Tybell T, Ahn C H and Triscone J M 1999 Appl. Phys. Lett. 75 856), the limit will be quite different for isolated 3D nanostructures (nanograins, nanoclusters). To investigate scaling effects of ferroelectric nanograins on Si wafers, we studied PbTiO3 (PTO) and Pb(ZrxTi1-x)O3 grown by a self-assembly chemical solution deposition method. Preparing highly diluted precursor solutions we achieved single separated ferroelectric grains with grain sizes ranging from 200 nm down to less than 20 nm. For grains smaller than 20 nm, no piezoresponse was observed and we suppose this could be due to the transition from the ferroelectric to the paraelectric phase which has no spontaneous polarization. Recent calculations (Zhong W L, Wang Y G, Zhang P L and Qu B D 1994 Phys. Rev. B 50 698) and experiments (Jiang B, Peng J L, Zhong W L and Bursill L A 2000 J. Appl. Phys. 87 3462) showed that the ferroelectricity of fine ferroelectric particles decrease with decreasing particle size. From these experiments the extrapolated critical size of PTO particles was found to be around 4.2-20 nm.

  18. Leveraging electronic healthcare record standards and semantic web technologies for the identification of patient cohorts

    PubMed Central

    Fernández-Breis, Jesualdo Tomás; Maldonado, José Alberto; Marcos, Mar; Legaz-García, María del Carmen; Moner, David; Torres-Sospedra, Joaquín; Esteban-Gil, Angel; Martínez-Salvador, Begoña; Robles, Montserrat

    2013-01-01

    Background The secondary use of electronic healthcare records (EHRs) often requires the identification of patient cohorts. In this context, an important problem is the heterogeneity of clinical data sources, which can be overcome with the combined use of standardized information models, virtual health records, and semantic technologies, since each of them contributes to solving aspects related to the semantic interoperability of EHR data. Objective To develop methods allowing for a direct use of EHR data for the identification of patient cohorts leveraging current EHR standards and semantic web technologies. Materials and methods We propose to take advantage of the best features of working with EHR standards and ontologies. Our proposal is based on our previous results and experience working with both technological infrastructures. Our main principle is to perform each activity at the abstraction level with the most appropriate technology available. This means that part of the processing will be performed using archetypes (ie, data level) and the rest using ontologies (ie, knowledge level). Our approach will start working with EHR data in proprietary format, which will be first normalized and elaborated using EHR standards and then transformed into a semantic representation, which will be exploited by automated reasoning. Results We have applied our approach to protocols for colorectal cancer screening. The results comprise the archetypes, ontologies, and datasets developed for the standardization and semantic analysis of EHR data. Anonymized real data have been used and the patients have been successfully classified by the risk of developing colorectal cancer. Conclusions This work provides new insights in how archetypes and ontologies can be effectively combined for EHR-driven phenotyping. The methodological approach can be applied to other problems provided that suitable archetypes, ontologies, and classification rules can be designed. PMID:23934950

  19. Wearable Technology Surveillance Data for the Personal Health Record Using the Omaha System: Noise Exposure, Cardiovascular and Stress Biomarkers.

    PubMed

    Kerr, Madeleine J; Chin, Dal Lae; Monsen, Karen A; Hong, OiSaeng

    2016-01-01

    This poster describes a method to prepare noise and health data from wearable technology for standardized representation in the electronic personal health record thus enabling individuals to identify noise-related health risks. Using a case study approach, the authors demonstrate transformation of data to the Omaha System standardized terminology in order to depict the data graphically in a personal health record.

  20. Crack instability of ferroelectric solids under alternative electric loading

    NASA Astrophysics Data System (ADS)

    Chen, Hao-Sen; Wang, He-Ling; Pei, Yong-Mao; Wei, Yu-Jie; Liu, Bin; Fang, Dai-Ning

    2015-08-01

    The low fracture toughness of the widely used piezoelectric and ferroelectric materials in technological applications raises a big concern about their durability and safety. Up to now, the mechanisms of electric-field induced fatigue crack growth in those materials are not fully understood. Here we report experimental observations that alternative electric loading at high frequency or large amplitude gives rise to dramatic temperature rise at the crack tip of a ferroelectric solid. The temperature rise subsequently lowers the energy barrier of materials for domain switch in the vicinity of the crack tip, increases the stress intensity factor and leads to unstable crack propagation finally. In contrast, at low frequency or small amplitude, crack tip temperature increases mildly and saturates quickly, no crack growth is observed. Together with our theoretical analysis on the non-linear heat transfer at the crack tip, we constructed a safe operating area curve with respect to the frequency and amplitude of the electric field, and validated the safety map by experiments. The revealed mechanisms about how electro-thermal-mechanical coupling influences fracture can be directly used to guide the design and safety assessment of piezoelectric and ferroelectric devices.

  1. Thin layer composite unimorph ferroelectric driver and sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    2004-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  2. Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

    NASA Technical Reports Server (NTRS)

    Helbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Antony, Jr. (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    1995-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  3. Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

    1997-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  4. Ferroelectric vortices from atomistic simulations

    NASA Astrophysics Data System (ADS)

    Bellaiche, Laurent

    2011-03-01

    In 2004, the use of a first-principles-based effective Hamiltonian led to the prediction of a novel structure in zero-dimensional ferroelectrics, in which the electric dipoles organize themselves to form a vortex. Such structure exhibits the so-called spontaneous toroidal moment, rather than the spontaneous polarization, as its order parameter. Subsequently, various original phenomena, all related to vortices, were predicted in ferroelectric nanostructures. Examples of such phenomena are: (i) the existence of a new order parameter, denoted as the hypertoroidal moment, that is associated with many complex dipolar structures (such as double-vortex states); (ii) the possible control of single and double vortex states by electric fields, via the formation of original intermediate states [4-8]; (iii) the discovery of a new class of quantum materials (denoted as incipient ferrotoroidics), for which zero-point vibrations wash out the vortex state and yield a complex local structure; (iv) the existence of chiral patterns of oxygen octahedral tiltings that originate from the coupling of these tiltings with the ferroelectric vortices. The purpose of this talk is to discuss some of these striking phenomena, as well as, to reveal others (if time allows). These studies are done in collaboration with A.R. Akbarzadeh, H. Fu, I. Kornev, I. Naumov, I. Ponomareva, S. Prosandeev, Wei Ren and D. Sichuga. These works are supported by the NSF grants DMR 0701558 and DMR-0080054 (C-SPIN), DOE grant DE-SC0002220, and ONR grants N00014-08-1-0915 and N00014-07-1-0825 (DURIP).

  5. Employee problems and their consequences in the technology industry: evidence from surveys and counseling records.

    PubMed

    Wang, Ching-Wen; Lin, Po-Chang; Sha, Chyuan

    2014-06-01

    To support employees' work and health, organizations should help employees cope with common problems. Previous studies have focused primarily on work-related problems across multiple industries rather than on evaluating industry-specific issues. Here, two approaches identified common work and non-work employee problems in the technology industry with the strongest correlations with psychosomatic health and life satisfaction. Study 1 used questionnaires to identify the problems that were perceived as the most frequent by lower-level employees (N = 355) working in the technology industry. Study 2 evaluated employees' coping behaviors by analyzing (with permission) counseling records collected from an employee assistance service company (N = 276). Employees reported a variety of problems; work problems were the only problems (of the top 5 problems) reported in both studies. Several problems emerged in the counseling records (e.g., legal issues, career development, family and marriage problems, and emotional problems) but not in the surveys. Future research should apply these observations to develop scales for measuring employee stressors.

  6. Performance improvement indicators of the Medical Records Department and Information Technology (IT) in hospitals

    PubMed Central

    Ajami, Sima; Ketabi, Saedeh; Torabiyan, Fatemeh

    2015-01-01

    Medical Record Department (MRD) has a vital role in making short and long term plans to improve health system services. The aim of this study was to describe performance improvement indicators of hospital MRD and information technology (IT). Collection of Data: A search was conducted in various databases, through related keywords in articles, books, and abstracts of conferences from 2001 to 2009. About 58 articles and books were available which were evaluated and finally 15 of them were selected based on their relevance to the study. MRD must be capable of supporting tasks such as patient care and continuity, institute management processes, medical education programs, medical research, communication between different wards of a hospital and administrative and medical staff. The use of IT in MRD can facilitate access to department, expedite communication within and outside department, reduce space with electronic medical records, reduce costs, accelerate activities such as coding by use of coding guide software and facilitate retrieval of records that will ultimately improve the performance of MRD. PMID:26150874

  7. High photovoltages in ferroelectric ceramics

    NASA Technical Reports Server (NTRS)

    Brody, P. S.

    1976-01-01

    The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

  8. Calligraphic Poling of Ferroelectric Material

    NASA Technical Reports Server (NTRS)

    Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

    2007-01-01

    Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

  9. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation. PMID:27296225

  10. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  11. New perspectives for ferroelectric LC-polymers

    SciTech Connect

    Brehmer, M.; Gebhard, E.; Wittig, T.

    1996-10-01

    LC-Elastomers prepared from ferroelectric LC-polymers are interesting materials for two reasons. From a materials point of view they are interesting because of their ferroelectric, piezoelectric and pyrroelectric properties. From a scientific point of view they are fascinating because they allow us to study the interplay of electric and mechanical forces in a rubbery material The coupling between the director reorientation and the network can be modified by crosslinking at the end of the mesogens or in the range of the polymer chains . In the last case the coupling is minimal. Besides the planar orientation in SSFLC-cells, free standing films offer the possibility of a homeotropic alignment of smectic liquid crystals ferroelectric LC elastomers of a different topology can be obtained by mixing a low molar mass or an oligomeric ferroelectric LC with a bifunctional crosslinkable: liquid crystal and performing photochemically a crosslinking reaction in one switching state of the smectic C* phase. As a result non crosslinkable ferroelectric LC will form micro-droplets surrounded by a densely crosslinked network, which is formed by the crosslinked non-ferroelectric liquid crystals. This gives a two phasic Volume or Network Stabilized Ferroelectric Liquid Crystal.

  12. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  13. New low temperature multiphase ferroelectric films

    NASA Astrophysics Data System (ADS)

    Bescher, Eric; Xu, Yuhuan; Mackenzie, J. D.

    2001-06-01

    This article describes the low-temperature synthesis of new multiphase ferroelectrics containing an inorganic ferroelectric phase entrapped in amorphous silica or in an organically modified silicate (ormosil). Sol gel derived LiNbO3 and BaTiO3 crystals were grown in SiO2 and in RSiO1.5 glass where R contains a chromophore (TDP) insensitive to hydrolysis and condensation reactions. The LiNbO3-SiO2 and BaTiO3-SiO2 compositions as well as the TDP-LiNbO3-SiO2 and TDP-BaTiO3-SiO2 ormosils exhibit ferroelectric-like properties. This unusual characteristic is due to the presence of small, partially ordered crystallites of the ferroelectric, dispersed in the amorphous matrix. In addition to their ferroelectric properties, the ormosils also exhibit interesting optical characteristics: the TDP-BaTiO3-SiO2 materials are red, whereas the TDP-LiNbO3-SiO2 are yellow. The materials described in this article are representative of two new classes of weak ferroelectrics. In the first class, a ferroelectric is dispersed in an amorphous matrix. The second class may be called "organically-modified crystals": small ferroelectric crystals embedded in an organically modified matrix. The fabrication of such materials is possible for inorganic crystalline phases forming at temperatures below the decomposition temperature of the organic (about 250 °C). This article also contains some theoretical considerations explaining why these materials, although amorphous by x-ray diffraction, exhibit ferroelectric-like properties.

  14. Biological, mechanical, and technological considerations affecting the longevity of intracortical electrode recordings.

    PubMed

    Harris, James P; Tyler, Dustin J

    2013-01-01

    Intracortical electrodes are important tools, with applications ranging from fundamental laboratory studies to potential solutions to intractable clinical applications. However, the longevity and reliability of the interfaces remain their major limitation to the wider implementation and adoption of this technology, especially in broader translational work. Accordingly, this review summarizes the most significant biological and technical factors influencing the long-term performance of intracortical electrodes. In a laboratory setting, intracortical electrodes have been used to study the normal and abnormal function of the brain. This improved understanding has led to valuable insights regarding many neurological conditions. Likewise, clinical applications of intracortical brain-machine interfaces offer the ability to improve the quality of life of many patients afflicted with high-level paralysis from spinal cord injury, brain stem stroke, amyotrophic lateral sclerosis, or other conditions. It is widely hypothesized that the tissue response to the electrodes, including inflammation, limits their longevity. Many studies have examined and modified the tissue response to intracortical electrodes to improve future intracortical electrode technologies. Overall, the relationship between biological, mechanical, and technological considerations are crucial for the fidelity of chronic electrode recordings and represent a presently active area of investigation in the field of neural engineering.

  15. Structural Consequences of Ferroelectric Nanolithography

    SciTech Connect

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  16. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  17. Ferroelectric ceramics in a pyroelectric accelerator

    SciTech Connect

    Shchagin, A. V.; Miroshnik, V. S.; Volkov, V. I.; Oleinik, A. N.

    2015-12-07

    The applicability of polarized ferroelectric ceramics as a pyroelectric in a pyroelectric accelerator is shown by experiments. The spectra of X-ray radiation of energy up to tens of keV, generated by accelerated electrons, have been measured on heating and cooling of the ceramics in vacuum. It is suggested that curved layers of polarized ferroelectric ceramics be used as elements of ceramic pyroelectric accelerators. Besides, nanotubes and nanowires manufactured from ferroelectric ceramics are proposed for the use in nanometer-scale ceramic pyroelectric nanoaccelerators for future applications in nanotechnologies.

  18. Ferroelectric Memory Capacitors For Neural Networks

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Moopenn, Alexander W.; Stadler, Henry L.

    1991-01-01

    Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

  19. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    SciTech Connect

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  20. Strong ultrasonic microwaves in ferroelectric ceramics.

    PubMed

    Arlt, G

    1998-01-01

    It is well known that ferroelectric materials have piezoelectric properties which allow the transformation of electrical signals into mechanical signals and vice versa. The transducer action normally is restricted to frequencies up to the mechanical resonance frequency of the sample. There are, however, two mechanisms which allow transducer action in ferroelectric ceramics at much higher frequencies: one is the normal piezoelectric effect in a ferroelectric ceramic in which the crystallites have periodic domain structures, the other is a domain wall effect in which ferroelastic domain walls in a periodic domain structure are powerful shear wave emitters. Both mechanisms give rise to extensive dielectric losses in ceramics at microwave frequencies. PMID:18244152

  1. 23 GHz ferroelectric electron gun based gyrotron

    NASA Astrophysics Data System (ADS)

    Ben-Moshe, R.; Einat, M.

    2011-04-01

    Ferroelectric cathodes have been explored as an alternative electron source for microwave tubes. Past experiments have demonstrated operation at frequencies of 2-10 GHz. Since the ferroelectric cathode is based on surface plasma, the relatively high energy spread limits the tube operation frequency. Hence, the possibility to obtain higher frequencies remained questionable. In this experimental work a gyrotron oscillator was designed with the operation frequency increased toward that of millimeter waves. A cylindrical tube with a cutoff frequency of ˜22 GHz was integrated to a ferroelectric electron gun. Pulses of ˜0.5 μs duration with a frequency of 23 GHz were obtained.

  2. Emission from ferroelectric cathodes. Revision 1

    SciTech Connect

    Sampayan, S.E.; Caporaso, G.J.; Holmes, C.L.; Lauer, E.J.; Prosnitz, D.; Trimble, D.O.; Westenskow, G.A.

    1993-05-01

    The authors have recently initiated an investigation of electron emission from ferroelectric cathodes. The experimental apparatus consisted of an electron diode and a 250 kV, 12 ohm, 70 ns pulsed high voltage power source. A planar triode modulator driven by a synthesized waveform generator initiates the polarization inversion and allows inversion pulse tailoring. The pulsed high voltage power source is capable of delivering two high voltage pulses within 50 {mu}s of each other and is capable of operating at a sustained repetition rate of 5 Hz. The initial measurements indicate that emission current densities above the Child-Langmuir Space Charge Limit, J{sub CL}, are possible. They explain this effect to be based on a non-zero initial energy of the emitted electrons. They also determined that this effect is strongly coupled to relative timing between the inversion pulse and application of the main anode-cathode pulse. They also have initiated brightness measurements of the emitted beam and estimate a preliminary lower bound to be on the order of 10{sup 9} A/m{sup 2}-rad{sup 2} for currents close to J{sub CL} and factor of two less at currents over 4J{sub CL}. As in previous measurements at this Laboratory, they performed the measurement using a pepper pot technique. Beamlet profiles are recorded with a fast phosphor and gated cameras. They describe their apparatus and preliminary measurements.

  3. Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

    2000-01-01

    The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

  4. Colossal Room-Temperature Electrocaloric Effect in Ferroelectric Polymer Nanocomposites Using Nanostructured Barium Strontium Titanates.

    PubMed

    Zhang, Guangzu; Zhang, Xiaoshan; Yang, Tiannan; Li, Qi; Chen, Long-Qing; Jiang, Shenglin; Wang, Qing

    2015-07-28

    The electrocaloric effect (ECE) refers to conversion of thermal to electrical energy of polarizable materials and could form the basis for the next-generation refrigeration and power technologies that are highly efficient and environmentally friendly. Ferroelectric materials such as ceramic and polymer films exhibit large ECEs, but each of these monolithic materials has its own limitations for practical cooling applications. In this work, nanosized barium strontium titanates with systematically varied morphologies have been prepared to form polymer nanocomposites with the ferroelectric polymer matrix. The solution-processed polymer nanocomposites exhibit an extraordinary room-temperature ECE via the synergistic combination of the high breakdown strength of a ferroelectric polymer matrix and the large change of polarization with temperature of ceramic nanofillers. It is found that a sizable ECE can be generated under both modest and high electric fields, and further enhanced greatly by tailoring the morphology of the ferroelectric nanofillers such as increasing the aspect ratio of the nanoinclusions. The effect of the geometry of the nanofillers on the dielectric permittivity, polarization, breakdown strength, ECE and crystallinity of the ferroelectric polymer has been systematically investigated. Simulations based on the phase-field model have been carried out to substantiate the experimental results. With the remarkable cooling energy density and refrigerant capacity, the polymer nanocomposites are promising for solid-state cooling applications.

  5. Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

    SciTech Connect

    Ievlev, Anton; Morozovska, A. N.; Eliseev, E. A.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.

  6. Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

    2016-10-01

    Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

  7. Morphology control of phase separated ferroelectric-semiconductor polymer blends for organic memory

    NASA Astrophysics Data System (ADS)

    Su, Gregory; Jacobs, Andrew; Kramer, Edward; Chabinyc, Michael

    2014-03-01

    The ability to store memory is essential for many electronic applications. All-organic memory devices based on a blend of a ferroelectric polymer and a semiconducting polymer have recently shown great promise for low-cost memory technology based on ferroelectricity. The thin film morphology of the phase separated ferroelectric-semiconductor polymer blend is critically important for working devices and improved operation. However, precise morphology control has so far been relatively unattainable. Here, we report on a new semiconducting polythiophene with a modified side chain structure (PEPT) that demonstrates a greatly improved phase separated morphology with the well-studied ferroelectric polymer poly[(vinylidenefluoride-co-trifluoroethylene] (PVDF-TrFE). Thin film surface and bulk characterization via microscopy, soft X-ray spectroscopy, and X-ray scattering experiments reveal that PEPT:PVDF-TrFE blends exhibit domain sizes that are easily tunable through simple parameters such as blend ratio. These results demonstrate progress toward achieving organic ferroelectric-semiconductor memory with optimized morphology and the techniques required for thorough thin film surface and bulk characterization.

  8. Does Wearable Medical Technology With Video Recording Capability Add Value to On-Call Surgical Evaluations?

    PubMed

    Gupta, Sameer; Boehme, Jacqueline; Manser, Kelly; Dewar, Jannine; Miller, Amie; Siddiqui, Gina; Schwaitzberg, Steven D

    2016-10-01

    Background Google Glass has been used in a variety of medical settings with promising results. We explored the use and potential value of an asynchronous, near-real time protocol-which avoids transmission issues associated with real-time applications-for recording, uploading, and viewing of high-definition (HD) visual media in the emergency department (ED) to facilitate remote surgical consults. Study Design First-responder physician assistants captured pertinent aspects of the physical examination and diagnostic imaging using Google Glass' HD video or high-resolution photographs. This visual media were then securely uploaded to the study website. The surgical consultation then proceeded over the phone in the usual fashion and a clinical decision was made. The surgeon then accessed the study website to review the uploaded video. This was followed by a questionnaire regarding how the additional data impacted the consultation. Results The management plan changed in 24% (11) of cases after surgeons viewed the video. Five of these plans involved decision making regarding operative intervention. Although surgeons were generally confident in their initial management plan, confidence scores increased further in 44% (20) of cases. In addition, we surveyed 276 ED patients on their opinions regarding concerning the practice of health care providers wearing and using recording devices in the ED. The survey results revealed that the majority of patients are amenable to the addition of wearable technology with video functionality to their care. Conclusions This study demonstrates the potential value of a medically dedicated, hands-free, HD recording device with internet connectivity in facilitating remote surgical consultation.

  9. Does Wearable Medical Technology With Video Recording Capability Add Value to On-Call Surgical Evaluations?

    PubMed

    Gupta, Sameer; Boehme, Jacqueline; Manser, Kelly; Dewar, Jannine; Miller, Amie; Siddiqui, Gina; Schwaitzberg, Steven D

    2016-10-01

    Background Google Glass has been used in a variety of medical settings with promising results. We explored the use and potential value of an asynchronous, near-real time protocol-which avoids transmission issues associated with real-time applications-for recording, uploading, and viewing of high-definition (HD) visual media in the emergency department (ED) to facilitate remote surgical consults. Study Design First-responder physician assistants captured pertinent aspects of the physical examination and diagnostic imaging using Google Glass' HD video or high-resolution photographs. This visual media were then securely uploaded to the study website. The surgical consultation then proceeded over the phone in the usual fashion and a clinical decision was made. The surgeon then accessed the study website to review the uploaded video. This was followed by a questionnaire regarding how the additional data impacted the consultation. Results The management plan changed in 24% (11) of cases after surgeons viewed the video. Five of these plans involved decision making regarding operative intervention. Although surgeons were generally confident in their initial management plan, confidence scores increased further in 44% (20) of cases. In addition, we surveyed 276 ED patients on their opinions regarding concerning the practice of health care providers wearing and using recording devices in the ED. The survey results revealed that the majority of patients are amenable to the addition of wearable technology with video functionality to their care. Conclusions This study demonstrates the potential value of a medically dedicated, hands-free, HD recording device with internet connectivity in facilitating remote surgical consultation. PMID:27335083

  10. Novel Acoustic Technology for Studying Free-Ranging Shark Social Behaviour by Recording Individuals' Interactions

    PubMed Central

    Guttridge, Tristan L.; Gruber, Samuel H.; Krause, Jens; Sims, David W.

    2010-01-01

    Group behaviours are widespread among fish but comparatively little is known about the interactions between free-ranging individuals and how these might change across different spatio-temporal scales. This is largely due to the difficulty of observing wild fish groups directly underwater over long enough time periods to quantify group structure and individual associations. Here we describe the use of a novel technology, an animal-borne acoustic proximity receiver that records close-spatial associations between free-ranging fish by detection of acoustic signals emitted from transmitters on other individuals. Validation trials, held within enclosures in the natural environment, on juvenile lemon sharks Negaprion brevirostris fitted with external receivers and transmitters, showed receivers logged interactions between individuals regularly when sharks were within 4 m (∼4 body lengths) of each other, but rarely when at 10 m distance. A field trial lasting 17 days with 5 juvenile lemon sharks implanted with proximity receivers showed one receiver successfully recorded association data, demonstrating this shark associated with 9 other juvenile lemon sharks on 128 occasions. This study describes the use of acoustic underwater proximity receivers to quantify interactions among wild sharks, setting the scene for new advances in understanding the social behaviours of marine animals. PMID:20174465

  11. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  12. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    PubMed Central

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-01-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

  13. Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT

    PubMed Central

    Evans, D.M.; Schilling, A.; Kumar, Ashok; Sanchez, D.; Ortega, N.; Arredondo, M.; Katiyar, R.S.; Gregg, J.M.; Scott, J.F.

    2013-01-01

    Single-phase magnetoelectric multiferroics are ferroelectric materials that display some form of magnetism. In addition, magnetic and ferroelectric order parameters are not independent of one another. Thus, the application of either an electric or magnetic field simultaneously alters both the electrical dipole configuration and the magnetic state of the material. The technological possibilities that could arise from magnetoelectric multiferroics are considerable and a range of functional devices has already been envisioned. Realising these devices, however, requires coupling effects to be significant and to occur at room temperature. Although such characteristics can be created in piezoelectric-magnetostrictive composites, to date they have only been weakly evident in single-phase multiferroics. Here in a newly discovered room temperature multiferroic, we demonstrate significant room temperature coupling by monitoring changes in ferroelectric domain patterns induced by magnetic fields. An order of magnitude estimate of the effective coupling coefficient suggests a value of ~1 × 10−7 sm−1. PMID:23443562

  14. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

    PubMed

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10(5). Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  15. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    SciTech Connect

    Kalinin, Sergei V; Rodriguez, Brian J; Jesse, Stephen; Karapetian, Edgar; Mirman, B; Eliseev, E. A.; Morozovska, A. N.

    2007-01-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  16. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  17. Interface control of bulk ferroelectric polarization

    SciTech Connect

    Yu, P; Luo, Weidong; Yi, D.; Zhang, J.-X.; Rossell, M.D.; Yang, C.-H.; You, L.; Singh-Bhalla, G. B.; Yang, S.Y; He, Q; Ramasse, Q. M.; Erni, R.; Martin, L. W.; Chu, Y. H.; Pantelides, Sokrates T; Pennycook, Stephen J; Ramesh, R.

    2012-01-01

    The control of material interfaces at the atomic level has led to no- vel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we em- ploy a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite un- derlayers extends the generality of this phenomenon.

  18. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Records Management and Preservation Considerations for Designing and Implementing Electronic Information... must design and implement migration strategies to counteract hardware and software dependencies of electronic records whenever the records must be maintained and used beyond the life of the information...

  19. Applying semantic web technologies for phenome-wide scan using an electronic health record linked Biobank

    PubMed Central

    2012-01-01

    Background The ability to conduct genome-wide association studies (GWAS) has enabled new exploration of how genetic variations contribute to health and disease etiology. However, historically GWAS have been limited by inadequate sample size due to associated costs for genotyping and phenotyping of study subjects. This has prompted several academic medical centers to form “biobanks” where biospecimens linked to personal health information, typically in electronic health records (EHRs), are collected and stored on a large number of subjects. This provides tremendous opportunities to discover novel genotype-phenotype associations and foster hypotheses generation. Results In this work, we study how emerging Semantic Web technologies can be applied in conjunction with clinical and genotype data stored at the Mayo Clinic Biobank to mine the phenotype data for genetic associations. In particular, we demonstrate the role of using Resource Description Framework (RDF) for representing EHR diagnoses and procedure data, and enable federated querying via standardized Web protocols to identify subjects genotyped for Type 2 Diabetes and Hypothyroidism to discover gene-disease associations. Our study highlights the potential of Web-scale data federation techniques to execute complex queries. Conclusions This study demonstrates how Semantic Web technologies can be applied in conjunction with clinical data stored in EHRs to accurately identify subjects with specific diseases and phenotypes, and identify genotype-phenotype associations. PMID:23244446

  20. Using Technology to Improve Cancer Care: Social Media, Wearables, and Electronic Health Records.

    PubMed

    Fisch, Michael J; Chung, Arlene E; Accordino, Melissa K

    2016-01-01

    Digital engagement has become pervasive in the delivery of cancer care. Internet- and cellular phone-based tools and systems are allowing large groups of people to engage with each other and share information. Health systems and individual health professionals are adapting to this revolution in consumer and patient behavior by developing ways to incorporate the benefits of technology for the purpose of improving the quality of medical care. One example is the use of social media platforms by oncologists to foster interaction with each other and to participate with the lay public in dialogue about science, medicine, and cancer care. In addition, consumer devices and sensors (wearables) have provided a new, growing dimension of digital engagement and another layer of patient-generated health data to foster better care and research. Finally, electronic health records have become the new standard for oncology care delivery, bringing new opportunities to measure quality in real time and follow practice patterns, as well as new challenges as providers and patients seek ways to integrate this technology along with other forms of digital engagement to produce more satisfaction in the process of care along with measurably better outcomes.

  1. Using Technology to Improve Cancer Care: Social Media, Wearables, and Electronic Health Records.

    PubMed

    Fisch, Michael J; Chung, Arlene E; Accordino, Melissa K

    2016-01-01

    Digital engagement has become pervasive in the delivery of cancer care. Internet- and cellular phone-based tools and systems are allowing large groups of people to engage with each other and share information. Health systems and individual health professionals are adapting to this revolution in consumer and patient behavior by developing ways to incorporate the benefits of technology for the purpose of improving the quality of medical care. One example is the use of social media platforms by oncologists to foster interaction with each other and to participate with the lay public in dialogue about science, medicine, and cancer care. In addition, consumer devices and sensors (wearables) have provided a new, growing dimension of digital engagement and another layer of patient-generated health data to foster better care and research. Finally, electronic health records have become the new standard for oncology care delivery, bringing new opportunities to measure quality in real time and follow practice patterns, as well as new challenges as providers and patients seek ways to integrate this technology along with other forms of digital engagement to produce more satisfaction in the process of care along with measurably better outcomes. PMID:27249700

  2. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk’Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric–dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  3. Processing of patterned ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Rod, Bernard J.

    1992-09-01

    Processing steps are described in detail for a procedure to fabricate sol-gel-derived lead-zirconate-titanate (PZT) ferroelectric thin-film capacitors in a manner compatible with processed complementary metal-oxide-semiconductor (CMOS) integrated-circuit wafers. The intended purpose of this work is to fabricate nonvolatile-element memory test structures for electrical and radiation characterization studies. A number of critical processing issues dealing with the etching of the PZT films and the deposition and definition of the top and bottom platinum electrodes were addressed and suitable solutions found during the course of this work. Using the procedures described herein, we fabricated working PZT capacitors and evaluated them electrically.

  4. Multiscale dynamics in relaxor ferroelectrics

    SciTech Connect

    Toulouse, J.; Cai, L; Pattnaik, R. K.; Boatner, Lynn A

    2014-01-01

    The multiscale dynamics of complex oxides is illustrated by pairs of mechanical resonances that are excited in the relaxor ferroelectric K1 xLixTaO3 (KLT). These macroscopic resonances are shown to originate in the collective dynamics of piezoelectric polar nanodomains (PND) interacting with the surrounding lattice. Their characteristic Fano lineshapes and rapid evolution with temperature reveal the coherent interplay between the piezoelectric oscillations and orientational relaxations of the PNDs at higher temperature and the contribution of heterophase oscillations near the phase transition. A theoretical model is presented, that describes the evolution of the resonances over the entire temperature range. Similar resonances are observed in other relaxors and must therefore be a common characteristics of these systems.

  5. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    SciTech Connect

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  6. Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

    NASA Astrophysics Data System (ADS)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF-TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization-electric field loop and piezoelectricity in the P(VDF-TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF-TrFE) layer.

  7. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    SciTech Connect

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Mitoseriu, Liliana; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen

    2013-02-21

    Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  8. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    NASA Astrophysics Data System (ADS)

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen; Mitoseriu, Liliana

    2013-02-01

    Particulate composites of ferrite and ferroelectric phases with xNiFe2O4 (NF) and (1 - x)Pb0.988(Zr0.52Ti0.48)0.976Nb0.024O3 (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 °C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  9. Developing a personal health record for community-dwelling older adults and clinicians: technology and content.

    PubMed

    Monsen, Karen A; Westra, Bonnie L; Paitich, Nadine; Ekstrom, Dawn; Mehle, Susan C; Kaeding, Maggie; Abdo, Sajeda; Natarajan, Gowtham; Ruddarraju, Uday Kumar Raju

    2012-07-01

    To empower older consumers and improve health outcomes, a consumer-friendly personal health record (PHR) is needed. The purpose of this article was to evaluate PHR technology and content for older community-dwelling consumers. Specific aims were to: (a) develop a secure, web-based application for a PHR to enable interoperable exchanges of data between consumers and clinicians; (b) develop structured, evidence-based shared care plan content for the PHR using an interface terminology standard; and (c) validate the shared care plans with consumers. An interoperable web-based form was developed. The standardized PHR content was developed by expert panel consensus using the Omaha System problem list and care plans, and validated by consumer interviews. Evidence-based shared care plans for 21 problems common among community-dwelling older adults were developed and encoded with Omaha System terms for data capture in the PHR. An additional problem, Neighborhood-workplace safety, was identified by consumers and will be added to the care plans.

  10. Automation of Presentation Record Production Based on Rich-Media Technology Using SNT Petri Nets Theory

    PubMed Central

    Martiník, Ivo

    2015-01-01

    Rich-media describes a broad range of digital interactive media that is increasingly used in the Internet and also in the support of education. Last year, a special pilot audiovisual lecture room was built as a part of the MERLINGO (MEdia-rich Repository of LearnING Objects) project solution. It contains all the elements of the modern lecture room determined for the implementation of presentation recordings based on the rich-media technologies and their publication online or on-demand featuring the access of all its elements in the automated mode including automatic editing. Property-preserving Petri net process algebras (PPPA) were designed for the specification and verification of the Petri net processes. PPPA does not need to verify the composition of the Petri net processes because all their algebraic operators preserve the specified set of the properties. These original PPPA are significantly generalized for the newly introduced class of the SNT Petri process and agent nets in this paper. The PLACE-SUBST and ASYNC-PROC algebraic operators are defined for this class of Petri nets and their chosen properties are proved. The SNT Petri process and agent nets theory were significantly applied at the design, verification, and implementation of the programming system ensuring the pilot audiovisual lecture room functionality. PMID:26258164

  11. Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1995-01-01

    Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

  12. 77 FR 42764 - Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology Royalty Funds...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-20

    ... Copyright Royalty Board Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology Royalty Funds for the Musical Works Funds AGENCY: Copyright Royalty Board, Library of Congress. ACTION... Copyright Royalty Judges are announcing the commencement of a proceeding to determine the distribution ]...

  13. Validating the Technology Acceptance Model in the Context of the Laboratory Information System-Electronic Health Record Interface System

    ERIC Educational Resources Information Center

    Aquino, Cesar A.

    2014-01-01

    This study represents a research validating the efficacy of Davis' Technology Acceptance Model (TAM) by pairing it with the Organizational Change Readiness Theory (OCRT) to develop another extension to the TAM, using the medical Laboratory Information Systems (LIS)--Electronic Health Records (EHR) interface as the medium. The TAM posits that it is…

  14. Nanoscale phenomena in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  15. Nucleation, growth, and control of ferroelectric-ferroelastic domains in thin polycrystalline films

    NASA Astrophysics Data System (ADS)

    Ivry, Yachin; Scott, James F.; Salje, Ekhard K. H.; Durkan, Colm

    2012-11-01

    The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model.

  16. The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

    NASA Technical Reports Server (NTRS)

    Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

    1979-01-01

    The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

  17. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-01

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

  18. Enhanced energy harvesting in commercial ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Patel, Satyanarayan; Chauhan, Aditya; Vaish, Rahul

    2014-04-01

    Ferroelectric materials are used in a number of applications ranging from simple sensors and actuators to ferroelectric random access memories (FRAMs), transducers, health monitoring system and microelectronics. The multiphysical coupling ability possessed by these materials has been established to be useful for energy harvesting applications. However, conventional energy harvesting techniques employing ferroelectric materials possess low energy density. This has prevented the successful commercialization of ferroelectric based energy harvesting systems. In this context, the present study aims at proposing a novel approach for enhanced energy harvesting using commercially available ferroelectric materials. This technique was simulated to be used for two commercially available piezoelectric materials namely PKI-552 and APCI-840, soft and hard lead-zirconate-titanate (PZT) pervoskite ceramics, respectively. It was observed that a maximum energy density of 348 kJm-3cycle-1 can be obtained for cycle parameters of (0-1 ton compressive stress and 1-25 kV.cm-1 electric field) using APCI-840. The reported energy density is several hundred times larger than the maximum energy density reported in the literature for vibration harvesting systems.

  19. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-01

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics. PMID:26814668

  20. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  1. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

    PubMed

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-01

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  2. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-01

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  3. Electrostatic micromotor based on ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Baginsky, I. L.; Kostsov, E. G.

    2004-11-01

    A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

  4. Negative differential conductivity in thin ferroelectric films

    NASA Astrophysics Data System (ADS)

    Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

    2014-11-01

    A phenomenon of negative differential conductivity in ferroelectric thin films is discussed. We proposed that the reason is polarization recovery current arising at current-voltage I(V) measurements as a result of polarization relaxation after pre-polarization of ferroelectric film. Simulation of this current by Weibull distribution provides a good correlation with the experimental data. The obtained values of the recovered polarization Prec and the field strength Erec at which the recovery polarization current reaches maximum do not depend on the voltage sweep rate and are well correlated with the values of polarization relaxation Prel and coercive field strength Ec obtained from dielectric hysteresis loop. It is shown that the current density due to polarization recovery Jrec may exceed by about an order the ohmic current density JΩ in ferroelectric film at Ec.

  5. Short range magnetic exchange interaction favors ferroelectricity.

    PubMed

    Wan, Xiangang; Ding, Hang-Chen; Savrasov, Sergey Y; Duan, Chun-Gang

    2016-01-01

    Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science. To search multiferroics, currently most researches are focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced ferroelectricity under a biaxial strain. In addition, we show that such mechanism also exists in the most important single phase multiferroics, i.e. BiFeO3, suggesting that this mechanism is ubiquitous in systems with superexchange interaction. PMID:26956480

  6. Exploring Healthcare Consumer Acceptance of Personal Health Information Management Technology through Personal Health Record Systems

    ERIC Educational Resources Information Center

    Wu, Huijuan

    2013-01-01

    Healthcare technologies are evolving from a practitioner-centric model to a patient-centric model due to the increasing need for technology that directly serves healthcare consumers, including healthy people and patients. Personal health information management (PHIM) technology is one of the technologies designed to enhance an individual's ability…

  7. Application of video recording technology to improve husbandry and reproduction in the carmine bee-eater (Merops n. nubicus).

    PubMed

    Ferrie, Gina M; Sky, Christy; Schutz, Paul J; Quinones, Glorieli; Breeding, Shawnlei; Plasse, Chelle; Leighty, Katherine A; Bettinger, Tammie L

    2016-01-01

    Incorporating technology with research is becoming increasingly important to enhance animal welfare in zoological settings. Video technology is used in the management of avian populations to facilitate efficient information collection on aspects of avian reproduction that are impractical or impossible to obtain through direct observation. Disney's Animal Kingdom(®) maintains a successful breeding colony of Northern carmine bee-eaters. This African species is a cavity nester, making their nesting behavior difficult to study and manage in an ex situ setting. After initial research focused on developing a suitable nesting environment, our goal was to continue developing methods to improve reproductive success and increase likelihood of chicks fledging. We installed infrared bullet cameras in five nest boxes and connected them to a digital video recording system, with data recorded continuously through the breeding season. We then scored and summarized nesting behaviors. Using remote video methods of observation provided much insight into the behavior of the birds in the colony's nest boxes. We observed aggression between birds during the egg-laying period, and therefore immediately removed all of the eggs for artificial incubation which completely eliminated egg breakage. We also used observations of adult feeding behavior to refine chick hand-rearing diet and practices. Although many video recording configurations have been summarized and evaluated in various reviews, we found success with the digital video recorder and infrared cameras described here. Applying emerging technologies to cavity nesting avian species is a necessary addition to improving management in and sustainability of zoo avian populations.

  8. Application of video recording technology to improve husbandry and reproduction in the carmine bee-eater (Merops n. nubicus).

    PubMed

    Ferrie, Gina M; Sky, Christy; Schutz, Paul J; Quinones, Glorieli; Breeding, Shawnlei; Plasse, Chelle; Leighty, Katherine A; Bettinger, Tammie L

    2016-01-01

    Incorporating technology with research is becoming increasingly important to enhance animal welfare in zoological settings. Video technology is used in the management of avian populations to facilitate efficient information collection on aspects of avian reproduction that are impractical or impossible to obtain through direct observation. Disney's Animal Kingdom(®) maintains a successful breeding colony of Northern carmine bee-eaters. This African species is a cavity nester, making their nesting behavior difficult to study and manage in an ex situ setting. After initial research focused on developing a suitable nesting environment, our goal was to continue developing methods to improve reproductive success and increase likelihood of chicks fledging. We installed infrared bullet cameras in five nest boxes and connected them to a digital video recording system, with data recorded continuously through the breeding season. We then scored and summarized nesting behaviors. Using remote video methods of observation provided much insight into the behavior of the birds in the colony's nest boxes. We observed aggression between birds during the egg-laying period, and therefore immediately removed all of the eggs for artificial incubation which completely eliminated egg breakage. We also used observations of adult feeding behavior to refine chick hand-rearing diet and practices. Although many video recording configurations have been summarized and evaluated in various reviews, we found success with the digital video recorder and infrared cameras described here. Applying emerging technologies to cavity nesting avian species is a necessary addition to improving management in and sustainability of zoo avian populations. PMID:26661620

  9. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  10. Ferroelectric Cathodes in Transverse Magnetic Fields

    SciTech Connect

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-07-29

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode.

  11. 95 GHz Gyrotron with Ferroelectric Cathode

    NASA Astrophysics Data System (ADS)

    Einat, M.; Pilossof, M.; Ben-Moshe, R.; Hirshbein, H.; Borodin, D.

    2012-11-01

    Ferroelectric cathodes were reported as a feasible electron source for microwave tubes. However, due to the surface plasma emission characterizing this cathode, operation of millimeter wave tubes based on it remains questionable. Nevertheless, the interest in compact high power sources of millimeter waves and specifically 95 GHz is continually growing. In this experiment, a ferroelectric cathode is used as an electron source for a gyrotron with the output frequency extended up to 95 GHz. Power above a 5 kW peak and ˜0.5μs pulses are reported; a duty cycle of 10% is estimated to be achievable.

  12. Optical Temperature Sensor Through Upconversion Emission from the Er3+ Doped SrBi8Ti7O27 Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zou, Hua; Wang, Xusheng; Hu, Yifeng; Zhu, Xiaoqing; Sui, Yongxing; Song, Zhitang

    2016-06-01

    Er doped SrBi8Ti7O27 (SBT) ferroelectric ceramics were prepared by a solid-state reaction technique. By Er doping, the intensive green upconversion emissions were recorded under 980 nm diode laser excitation with 20 mW. The fluorescence spectrum was investigated in the temperature range of 150-580 K. By the fluorescence intensity ratio technique, the green emission band was studied as a function of temperature with a maximum sensing sensitivity of 0.0028 at 510 K. These results indicate that the Er doped SBT ferroelectric ceramics are promising multifunctional sensing materials.

  13. Integrated ferroelectric stacked MIM capacitors with 100 nF/mm(2) and 90 V breakdown as replacement for discretes.

    PubMed

    Roest, Aarnoud; Mauczok, Rüdiger; Reimann, Klaus; van Leuken-Peters, Linda; Klee, Mareike

    2009-03-01

    This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm(2) combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85 degrees C and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking of capacitors. The reliability of these ferroelectric capacitors was studied in detail with accelerated lifetime testing. The high performance of the integrated capacitors in this paper shows great potential for applications demanding high capacitance densities combined with electrostatic discharge protection.

  14. Static ferroelectric memory transistor having improved data retention

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.

    1996-01-01

    An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

  15. First-principles study of interface doping in ferroelectric junctions.

    PubMed

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-04-11

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)(-) monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)(+) inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions.

  16. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  17. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy.

    PubMed

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I; Yu, Pu; Kalinin, Sergei V

    2015-06-23

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. We will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In the end, we apply the developed measurement protocols to an unknown ferroelectric material.

  18. First-principles study of interface doping in ferroelectric junctions

    PubMed Central

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-01-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)− monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions. PMID:27063704

  19. Magnetic Recording.

    ERIC Educational Resources Information Center

    Lowman, Charles E.

    A guide to the technology of magnetic recorders used in such fields as audio recording, broadcast and closed-circuit television, instrumentation recording, and computer data systems is presented. Included are discussions of applications, advantages, and limitations of magnetic recording, its basic principles and theory of operation, and its…

  20. Measuring Maturity of Use for Electronic Medical Records (EMRs) in British Columbia: The Physician Information Technology Office (PITO).

    PubMed

    Rimmer, Carol; Hagens, Simon; Baldwin, Anne; Anderson, Carol J

    2014-01-01

    This article examines British Columbia (BC)'s Physician Information Technology Office's efforts to measure and improve the use of electronic medical records (EMRs) by select practices in BC with an assessment of their progress using a maturity model, and targeted support. The follow-up assessments showed substantial increases in the physicians' scores resulting from action plans that comprised a series of tailored support activities. Specifically, there was an increase from 21% to 83% of physicians who could demonstrate that they used their EMRs as the principal method of record-keeping.

  1. Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd, C.; Ho, Fat Duen

    2006-01-01

    All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

  2. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

    NASA Astrophysics Data System (ADS)

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

    2016-08-01

    The ability to generate efficient giga-terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics.

  3. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

    PubMed Central

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

    2016-01-01

    The ability to generate efficient giga–terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics. PMID:27492493

  4. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics.

    PubMed

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E; Dkhil, Brahim; Ruello, Pascal

    2016-01-01

    The ability to generate efficient giga-terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics. PMID:27492493

  5. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics.

    PubMed

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E; Dkhil, Brahim; Ruello, Pascal

    2016-08-05

    The ability to generate efficient giga-terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics.

  6. Improving the Quality of Nursing Home Care and Medical-Record Accuracy with Direct Observational Technologies

    ERIC Educational Resources Information Center

    Schnelle, John F.; Osterweil, Dan; Simmons, Sandra F.

    2005-01-01

    Nursing home medical-record documentation of daily-care occurrence may be inaccurate, and information is not documented about important quality-of-life domains. The inadequacy of medical record data creates a barrier to improving care quality, because it supports an illusion of care consistent with regulations, which reduces the motivation and…

  7. Scientific and Technological Information in Transactional Files in Government Records and Archives: A RAMP Study.

    ERIC Educational Resources Information Center

    Wimalaratne, K. D. G.

    This long-term Records and Archives Administration Programme (RAMP) study is designed to assist archivists, records managers, and information specialists in identifying for current use and possible archival selection those transactional or case files that contain scientific and technical information (STI), particularly in those instances where…

  8. [The impact of technological change on census taking: some thoughts on implications for the 1990 round of censuses and on the statistical use of administrative records].

    PubMed

    Brackstone, G J

    1984-01-01

    The author presents some general thoughts on the implications of technological change for the 1990 round of censuses and for the statistical use of administrative records. Consideration is also given to alternative methods of obtaining the type of data traditionally collected in a population census, by using these new technologies in association with administrative record systems.

  9. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  10. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  11. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics. PMID:26487348

  12. The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

  13. A Model for Ferroelectric Phase Shifters

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Qureshi, A. Haq

    2000-01-01

    Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

  14. Ferroelectric Devices Emit Charged Particles and Radiation

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Felsteiner, Joshua; Karsik, Yakov

    2005-01-01

    Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

  15. Giant Electroresistive Ferroelectric Diode on 2DEG.

    PubMed

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-05-27

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.

  16. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites. PMID:27135419

  17. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

  18. Giant Electroresistive Ferroelectric Diode on 2DEG

    PubMed Central

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-01-01

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

  19. Quantum criticality in a uniaxial organic ferroelectric

    NASA Astrophysics Data System (ADS)

    Rowley, S. E.; Hadjimichael, M.; Ali, M. N.; Durmaz, Y. C.; Lashley, J. C.; Cava, R. J.; Scott, J. F.

    2015-10-01

    Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130 K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail and was found to persist up to temperatures of at least 30-40 K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as 1/T 3close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as 1/T 2 as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipole moments in the TSCC family of crystals. Interestingly, we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally, we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.

  20. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  1. Ferroelectric control of a Mott insulator.

    PubMed

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E; Barthélémy, Agnès; Bibes, Manuel

    2013-10-03

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its "supertetragonal" phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices.

  2. Ferroelectric control of a Mott insulator

    PubMed Central

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E.; Barthélémy, Agnès; Bibes, Manuel

    2013-01-01

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices. PMID:24089020

  3. Foreign technology alert-bibliography: Photography and recording devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Wilkinson, G.

    1982-11-01

    A systematically organized collection of abstracts from a bibliographic data base is provided on reports relating to photographic, imaging and recording systems originating from countries outside the USA. A tailored search of the data base was performed and the output carefully categorized, edited and indexed. Subjects covered include: photographic devices and imaging systems (cameras, image carriers, holography and applications); audiovisual recording (digital, magnetic and video); date encoding, recording and storage; and satellite equipment. Each of the sections in the book is cross-referenced and there is also an author index and useful subject index based on major descriptors.

  4. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-15

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  5. Intrinsic ferroelectric switching from first principles

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.

    2016-06-01

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  6. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-16

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  7. Interaction of Terahertz Radiation with Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nelson, Keith

    2007-03-01

    Ferroelectric crystals have long been used as acoustic transducers and receivers. An extensive toolset has been developed for MHz-frequency acoustic wave generation, control, guidance, and readout. In recent years, an analogous toolset has been developed for terahertz wave transduction and detection. Femtosecond optical pulses irradiate ferroelectric crystals to generate responses in the 0.1-5 THz frequency range that are admixtures of electromagnetic and polar lattice vibrational excitations called phonon-polaritons. Spatiotemporal femtosecond pulse shaping may be used to generate additional optical pulses that arrive at specified times and sample locations for control and manipulation of the THz waves. Femtosecond laser machining may be used for fabrication of waveguides, resonators, and other structures that are integrated into the ferroelectric host crystal. Finally, real-space imaging of the THz fields can be executed with variably delayed femtosecond probe pulses, permitting direct visualization of THz wave spatial and temporal evolution. This ``polaritonics'' toolset enables multiplexed generation of arbitrary THz waveforms and use of the waveforms within the ferroelectric host crystal or after projection into free space or an adjacent medium. The polaritonics platform will be reviewed and several new developments and applications will be presented. These include spectroscopy of relaxor ferroelectrics, whose temperature-dependent dielectric responses in the GHz-THz regime reveal complex polarization dynamics on well separated fast and slow time scales; direct measurement of phonon-polariton lattice vibrational displacements through femtosecond time-resolved x-ray diffraction; generation of high polariton field amplitudes and pulse energies; use of large-amplitude polariton waves to drive nonlinear lattice vibrational responses; and enhancement of optical-to-THz conversion efficiency through a pseudo-phase-matching approach that circumvents the very large

  8. 2009 Mississippi Curriculum Framework: Postsecondary Health Information Technology. (Program CIP-51.0707-Medical Records Technology/Technician)

    ERIC Educational Resources Information Center

    Hoffman, Casey; Jones, Robin; McGuffee, Michelle; Scott, Nena

    2009-01-01

    As the world economy continues to evolve, businesses and industries must adopt new practices and processes in order to survive. Quality and cost control, work teams and participatory management, and an infusion of technology are transforming the way people work and do business. Employees are now expected to read, write, and communicate…

  9. Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

    NASA Astrophysics Data System (ADS)

    Tyunina, Marina; Yao, Lide; Chvostova, Dagmar; Dejneka, Alexandr; Kocourek, Tomas; Jelinek, Miroslav; Trepakov, Vladimir; van Dijken, Sebastiaan

    2015-04-01

    Perovskite-type ferroelectric (FE) crystals are wide bandgap materials with technologically valuable optical and photoelectric properties. Here, versatile engineering of electronic transitions is demonstrated in FE nanofilms of KTaO3, KNbO3 (KNO), and NaNbO3 (NNO) with a thickness of 10-30 unit cells. Control of the bandgap is achieved using heteroepitaxial growth of new structural phases on SrTiO3 (001) substrates. Compared to bulk crystals, anomalous bandgap narrowing is obtained in the FE state of KNO and NNO films. This effect opposes polarization-induced bandgap widening, which is typically found for FE materials. Transmission electron microscopy and spectroscopic ellipsometry measurements indicate that the formation of higher-symmetry structural phases of KNO and NNO produces the desirable red shift of the absorption spectrum towards visible light, while simultaneously stabilizing robust FE order. Tuning of optical properties in FE films is of interest for nanoscale photonic and optoelectronic devices.

  10. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

    PubMed

    Cai, Ronggang; Kassa, Hailu G; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H; Ruzié, Christian; van Breemen, Albert J J M; Gelinck, Gerwin H; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M

    2016-03-21

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.

  11. Ferroelectric domain wall motion induced by polarized light.

    PubMed

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F

    2015-03-17

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light.

  12. Ferroelectric domain engineering by focused infrared femtosecond pulses

    SciTech Connect

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan; Karpinski, Pawel; Koynov, Kaloian; Wang, Bingxia; Trull, Jose; Cojocaru, Crina; Krolikowski, Wieslaw

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  13. Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

    PubMed

    Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

    2016-02-19

    We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

  14. Ferroelectric domain wall motion induced by polarized light.

    PubMed

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  15. Study of ferroelectric characteristics of diisopropylammonium bromide films

    NASA Astrophysics Data System (ADS)

    Thirmal, C.; Biswas, P. P.; Shin, Y. J.; Noh, T. W.; Giridharan, N. V.; Venimadhav, A.; Murugavel, P.

    2016-09-01

    Organic molecular ferroelectrics are highly desirable due to their numerous advantages. In the present work, a thick film of diisopropylammonium bromide organic molecular ferroelectric is fabricated on the ITO/glass substrate. The grown film shows preferential orientation along the c-axis with a ferroelectric transition at 419 K. The piezoresponse force microscopic measurements are done in a dual ac resonance tracking mode for its switching characteristics. The amplitude and phase images of the oppositely written domain patterns exhibit a clear contrast with 180° phase difference. The dynamical spectroscopic studies reveal a butterfly loop in amplitude and hysteretic character of the phase which are the expected characteristics features of ferroelectrics. In addition, the macroscopic polarization versus electric field hysteresis gives an additional proof for ferroelectric character of the film with the maximum polarization of 3.5 μC/cm2. Overall, we have successfully fabricated diisopropylammonium bromide organic films and demonstrated its room temperature ferroelectric characteristics.

  16. Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

    NASA Astrophysics Data System (ADS)

    Fei, Ruixiang; Kang, Wei; Yang, Li

    2016-08-01

    Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides M X (M =Ge , Sn; X =S , Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials.

  17. Ferroelectric domain wall motion induced by polarized light

    PubMed Central

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  18. Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides.

    PubMed

    Fei, Ruixiang; Kang, Wei; Yang, Li

    2016-08-26

    Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials. PMID:27610884

  19. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  20. An investigation of the effect of nurses’ technology readiness on the acceptance of mobile electronic medical record systems

    PubMed Central

    2013-01-01

    Background Adopting mobile electronic medical record (MEMR) systems is expected to be one of the superior approaches for improving nurses’ bedside and point of care services. However, nurses may use the functions for far fewer tasks than the MEMR supports. This may depend on their technological personality associated to MEMR acceptance. The purpose of this study is to investigate nurses’ personality traits in regard to technology readiness toward MEMR acceptance. Methods The study used a self-administered questionnaire to collect 665 valid responses from a large hospital in Taiwan. Structural Equation modeling was utilized to analyze the collected data. Results Of the four personality traits of the technology readiness, the results posit that nurses are optimistic, innovative, secure but uncomfortable about technology. Furthermore, these four personality traits were all proven to have a significant impact on the perceived ease of use of MEMR while the perceived usefulness of MEMR was significantly influenced by the optimism trait only. The results also confirmed the relationships between the perceived components of ease of use, usefulness, and behavioral intention in the Technology Acceptance Model toward MEMR usage. Conclusions Continuous educational programs can be provided for nurses to enhance their information technology literacy, minimizing their stress and discomfort about information technology. Further, hospital should recruit, either internally or externally, more optimistic nurses as champions of MEMR by leveraging the instrument proposed in this study. Besides, nurses’ requirements must be fully understood during the development of MEMR to ensure that MEMR can meet the real needs of nurses. The friendliness of user interfaces of MEMR and the compatibility of nurses’ work practices as these will also greatly enhance nurses’ willingness to use MEMR. Finally, the effects of technology personality should not be ignored, indicating that hospitals

  1. Nuclear Technology. Course 28: Welding Inspection. Module 28-10, Records.

    ERIC Educational Resources Information Center

    Espy, John

    This tenth in a series of ten modules for a course titled Welding Inspection describes records associated with welding which serve three functions: specification of agreements, initiation of action in fulfillment of agreement, and historical evidence of action taken. The module follows a typical format that includes the following sections: (1)…

  2. From "Mystery Train" to "Cyberspace Sadie": References to Technology in Blues Recordings, 1923-2003

    ERIC Educational Resources Information Center

    Cooper, B. Lee

    2006-01-01

    Over the past eight decades the lyrics of blues recordings have provided valuable insights into the opinions and feelings of singers and songwriters. Commentaries concerning workplace relations, self esteem, romantic involvements, financial security, clothing styles, alcohol use, religion, health, death, and other universal human issues have been…

  3. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... must design and implement migration strategies to counteract hardware and software dependencies of... migration of the records to a new system before the current system is retired. (b) Carry out upgrades of... usable format until their authorized disposition date. Where migration includes conversion of...

  4. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... must design and implement migration strategies to counteract hardware and software dependencies of... migration of the records to a new system before the current system is retired. (b) Carry out upgrades of... usable format until their authorized disposition date. Where migration includes conversion of...

  5. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... must design and implement migration strategies to counteract hardware and software dependencies of... migration of the records to a new system before the current system is retired. (b) Carry out upgrades of... usable format until their authorized disposition date. Where migration includes conversion of...

  6. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... must design and implement migration strategies to counteract hardware and software dependencies of... migration of the records to a new system before the current system is retired. (b) Carry out upgrades of... usable format until their authorized disposition date. Where migration includes conversion of...

  7. Patch-clamp recording in brain slices with improved slicer technology.

    PubMed

    Geiger, J R P; Bischofberger, J; Vida, I; Fröbe, U; Pfitzinger, S; Weber, H J; Haverkampf, K; Jonas, P

    2002-01-01

    The use of advanced patch-clamp recording techniques in brain slices, such as simultaneous recording from multiple neurons and recording from dendrites or presynaptic terminals, demands slices of the highest quality. In this context the mechanics of the tissue slicer are an important factor. Ideally, a tissue slicer should generate large-amplitude and high-frequency movements of the cutting blade in a horizontal axis, with minimal vibrations in the vertical axis. We developed a vibroslicer that fulfils these in part conflicting requirements. The oscillator is a permanent-magnet-coil-leaf-spring system. Using an auto-resonant mechano-electrical feedback circuit, large horizontal oscillations (up to 3 mm peak-to-peak) with high frequency ( approximately 90 Hz) are generated. To minimize vertical vibrations, an adjustment mechanism was employed that allowed alignment of the cutting edge of the blade with the major axis of the oscillation. A vibroprobe device was used to monitor vertical vibrations during adjustment. The system is based on the shading of the light path between a light-emitting diode (LED) and a photodiode. Vibroprobe monitoring revealed that the vibroslicer, after appropriate adjustment, generated vertical vibrations of <1 microm, significantly less than many commercial tissue slicers. Light- and electron-microscopic analysis of surface layers of slices cut with the vibroslicer showed that cellular elements, dendritic processes and presynaptic terminals are well preserved under these conditions, as required for patch-clamp recording from these structures. PMID:11810221

  8. Principles for Information Technology Investment in U.S. Federal Electronic Records Management.

    ERIC Educational Resources Information Center

    Van Wingen, Rachel Senner; Hathorn, Fred; Sprehe, J. Timothy

    1999-01-01

    The United States Environmental Protection Agency (EPA) underwent a business process reengineering (BPR) exercise with respect to future co-location of previously separate regulatory docket facilities. Their experience suggests that future mandatory electronic records management (ERM) requirements will cause federal agencies to take a more…

  9. Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

    NASA Astrophysics Data System (ADS)

    Verma, Ram Mohan; Rao, Ashwath; Singh, B. R.

    2014-03-01

    This paper presents our work on electrical characterization of metal-ferroelectric-oxide-semiconductor (MFeOS) and metal-ferroelectric-nitride-semiconductor (MFeNS) structures for nonvolatile memory applications. Thin films of lead zirconate titanate (PZT: 35:65) have been used as ferroelectric material on 2.5-5 nm thick thermally grown SiO2 and Si3N4 as buffer layer for MFeOS and MFeNS structures, respectively. Capacitance-Voltage (C-V) and Current-Voltage (I-V) characteristics were used for electrical characterization. Our comparative results reveal that the MFeNS structure with 2.5 nm thick buffer layer has higher memory window of about 3.6 V as compared to 3 V for similar MFeOS structure. Also superior electrical properties such as lower leakage current and higher dielectric strength were observed in MFeNS structures. Higher nitridation time was observed to deteriorate the polarization characteristics resulting in reduced memory window. The highest memory window of 6.5 V was observed for SiO2 buffer layer thickness of 5 nm. We also observed that the annealing temperature influences the leakage current characteristic and memory window of these structures.

  10. A ferroelectric model for the low emissivity highlands on Venus

    NASA Technical Reports Server (NTRS)

    Shepard, Michael K.; Arvidson, Raymond E.; Brackett, Robert A.; Fegley, Bruce, Jr.

    1994-01-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (10(exp 5)) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  11. Ferroelectric polymer nanostructures: fabrication, structural characteristics and performance under confinement.

    PubMed

    Guo, Dong; Zeng, Fei; Dkhil, Brahim

    2014-02-01

    Ferroelectric polymers have recently attracted tremendous research interest due to their potential application in various emerging flexible devices. Nanostructured ferroelectric polymer materials, such as nanorods, nanotube, and nanowires, are essential for miniaturization of the relevant electronic components. More importantly, their improved sensitivity and functionality may be used to enhance the performance of existing devices or to develop and design new devices. In this article, the recently developed methods for fabricating ferroelectric polymer nanostructures are briefly reviewed. In particular, the distinct crystallization behaviors confined at the nanometer scale, the nanoconfinement induced structural change, their influence on the physical properties of the ferroelectric polymer nanostructures, and the possible underlying mechanisms are discussed.

  12. A ferroelectric liquid crystal conglomerate composed of racemic molecules

    PubMed

    Walba; Korblova; Shao; Maclennan; Link; Glaser; Clark

    2000-06-23

    We describe the design and synthesis of a ferroelectric liquid crystal composed of racemic molecules. The ferroelectric polarization results from spontaneous polar symmetry breaking in a fluid smectic. The ferroelectric phase is also chiral, resulting in the formation of a mixture of macroscopic domains of either handedness at the isotropic-to-liquid crystal phase transition. This smectic liquid crystal is thus a fluid conglomerate. Detailed investigation of the electrooptic and polarization current behavior within individual domains in liquid crystal cells shows the thermodynamically stable structure to be a uniformly tilted smectic bow-phase (banana phase), with all layer pairs homochiral and ferroelectric (SmC(S)P(F)).

  13. One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

    PubMed Central

    Liang, Longyue; Kang, Xueliang

    2016-01-01

    One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined. PMID:27812477

  14. Ferroelectric nanostructure having switchable multi-stable vortex states

    DOEpatents

    Naumov, Ivan I.; Bellaiche, Laurent M.; Prosandeev, Sergey A.; Ponomareva, Inna V.; Kornev, Igor A.

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  15. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  16. Magnetocaloric effect in ferroelectric Ising chain magnet

    NASA Astrophysics Data System (ADS)

    Qi, Yan; Liu, Jia; Yu, Nai-sen; Du, An

    2016-05-01

    We investigate the magnetocaloric effect (MCE) in multiferroic chain system by adopting the elastic Ising-chain model. Based on the transfer-matrix method, the magnetothermal quantities of characterizing MCE behaviors including the entropy, entropy change and adiabatic cooling rate are rigorously determined. Combined with analysis of ground-state, we mainly discuss results in an antiferromagnetic regime associated with ferroelectric transition. Our results show that the entropy change is greatly enhanced near the saturation field as frustration parameter varies in this regime, and accompanied with remarkable inverse MCE, indicating the enormous potential of multiferroic system in low-temperature refrigeration. Meanwhile we also observe a prominent temperature variation in the isoentropy curves close to zero-temperature ferroelectric transition, but this enhancing MCE signal is very sensitive to the thermal fluctuations, and can be strongly suppressed even under a small temperature.

  17. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  18. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    NASA Astrophysics Data System (ADS)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  19. Vertical Transport in Ferroelectric/Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Begon-Lours, Laura; Trastoy, Juan; Bernard, Rozenn; Jacquet, Eric; Carretero, Cecile; Bouzehouane, Karim; Fusil, Stephane; Garcia, Vincent; Xavier, Stephane; Girod, Stephanie; Deranlot, Cyrile; Bibes, Manuel; Barthelemy, Agnes; Villegas, Javier E.

    2015-03-01

    We study electric field-effects in superconducting films by measuring vertical transport in ferroelectric/superconductor heterostructures. These are based on ultrathin (4 to 8 nm thick) BiFeO3-Mn grown on YBa2Cu3O7 by pulsed laser deposition. Nanoscale contacts are defined on the BiFeO3 via a series of nanofabrication steps which include e-beam lithography, metal deposition (Nb or Co capped with Pt) and lift-off. Conductive-tip atomic force microscopy and piezoresponse force microscopy are used to characterize the transport across the ferroelectric barrier as a function of its polarization (up/down). The observed electro-resistance, measured at various temperatures, allows studying the different electric-field screening in the normal and superconducting states. Work supported by DIM Oxymore.

  20. Porous ferroelectrics for energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Roscow, J.; Zhang, Y.; Taylor, J.; Bowen, C. R.

    2015-11-01

    This paper provides an overview of energy harvesting using ferroelectric materials, with a particular focus on the energy harvesting capabilities of porous ferroelectric ceramics for both piezo- and pyroelectric harvesting. The benefits of introducing porosity into ferro- electrics such as lead zirconate titanate (PZT) has been known for over 30 years, but the potential advantages for energy harvesting from both ambient vibrations and temperature fluctuations have not been studied in depth. The article briefly discusses piezoelectric and pyro- electric energy harvesting, before evaluating the potential benefits of porous materials for increasing energy harvesting figures of merits and electromechanical/electrothermal coupling factors. Established processing routes are evaluated in terms of the final porous structure and the resulting effects on the electrical, thermal and mechanical properties.

  1. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

    2016-03-23

    The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.

  2. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

    PubMed Central

    Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

    2016-01-01

    The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

  3. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  4. Technology and Health Care: Efficiency, Frustration, and Disconnect in the Transition to Electronic Medical Records

    PubMed Central

    Magsamen-Conrad, Kate; Checton, Maria

    2014-01-01

    This study investigates one medical facility's transition to electronic medical records (becoming “paperless”). We utilized face-to-face interviews to investigate the transition process with one implementer (the vice president of the medical facility) and three stakeholders from one of the four offices (an assistant office manager, a nurse, and a medical technician). We discuss the dominant themes of efficiency, frustration, and disconnect as well as conclusions and implications. PMID:25729754

  5. Ferroelectricity in (K@C60)n

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis P.

    2000-09-01

    A theoretical analysis of the ground state of long-chain (K@C60)n is presented. Within mean field theory, a ferroelectric ground state is found to be stable because of the pseudo-Jahn-Teller mixing of the b1u and the b2g band with a zone-center optical phonon involving the displacement of the endohedral K- ions. A phase diagram for this model is derived in the narrow bandwidth regime.

  6. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  7. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, Peter J.

    1987-01-01

    A method of electrically inducing mechanical precompression of a ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion.

  8. WFL: Microwave Applications of Thin Ferroelectric Films

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert

    2013-01-01

    We have developed a family of tunable microwave circuits, operating from X- through Ka-band, based on laser ablated BaxSr1-xTiO films on lanthanum aluminate and magnesium oxide substrates. Circuits include voltage controlled oscillators, filters, phase shifters and antennas. A review of the basic theory of operation of these devices will be presented along with measured performance. Emphasis has been on low-loss phase shifters to enable a new phased array architecture. The critical role of phase shifter loss and transient response in reflectarray antennas will be discussed. The Ferroelectric Reflectarray Critical Components Space Experiment was launched on the penultimate Space Shuttle, STS-134, in May of 2011. It included a bank of ferroelectric phase shifters with two different stoichiometries as well as ancillary electronics. The experiment package and status will be reported. In addition, unusual results of a Van der Pauw measurement involving a ferroelectric film grown on buffered high resisitivity silicon will be discussed.

  9. Ferroelectricity in underdoped La-based cuprates.

    PubMed

    Viskadourakis, Z; Sunku, S S; Mukherjee, S; Andersen, B M; Ito, T; Sasagawa, T; Panagopoulos, C

    2015-10-21

    Doping a "parent" antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2-xSrxCuO4, La2LixCu1-xO4 and La2CuO4+x. It is proposed that ferroelectricity may result from local CuO6 octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction.

  10. Influence of ferroelectric polarization on magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Mardana, A.; Ducharme, S.; Adenwalla, S.

    2010-03-01

    Thin film heterostructures of transition metal ferromagnets (FM) and polymer ferroelectrics (FE) are investigated to look for changes in the magnetic anisotropy of the FM layer that occur on switching the FE polarization (with an ensuing change in the electric field direction).[1] Samples of [Glass/ Pd (50 nm)/Co wedge (0.9-2.6nm)/ferroelectric P(VDF-TrFE) (53 nm)/Al (30nm)] are deposited via sputtering or evaporation for the metallic layers and via Langmuir-Schaefer deposition for the polymer ferroelectric. [2] Magnetic and FE properties have been characterized using the Magneto-Optical Kerr Effect (MOKE) and the pyroelectric effect. Polar and longitudinal MOKE loops are measured across the Co wedge for both positive and negative FE polarization and the difference in the two MOKE loops is ascribed to the changes in the magnetic anisotropy of the FM layer. [3] These changes are most apparent in the region where the Co undergoes a transition from in-plane to out-of-plane anisotropy. This research is supported by the NSF MRSEC through Grant No. DMR- 0820521 1. Chun-Gang Duan et al, Appl. Phys. Lett. 92, 122905 (2008) 2. A. V. Bune, et al, Nature (London) 391, 874 (1998) 3. P. F. Carcia, J.Appl. Phys. 63, 5066 (1988)

  11. Ferroelectric tunnel junctions with graphene electrodes.

    PubMed

    Lu, H; Lipatov, A; Ryu, S; Kim, D J; Lee, H; Zhuravlev, M Y; Eom, C B; Tsymbal, E Y; Sinitskii, A; Gruverman, A

    2014-01-01

    Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary conditions, which can be controlled by electrode material and/or interface engineering. Here, we demonstrate the use of graphene as electrodes in FTJs that allows control of interface properties for significant enhancement of device performance. Ferroelectric polarization stability and resistive switching are strongly affected by a molecular layer at the graphene/BaTiO3 interface. For the FTJ with the interfacial ammonia layer we find an enhanced tunnelling electroresistance (TER) effect of 6 × 10(5)%. The obtained results demonstrate a new approach based on using graphene electrodes for interface-facilitated polarization stability and enhancement of the TER effect, which can be exploited in the FTJ-based devices. PMID:25417720

  12. Ferroelectricity in underdoped La-based cuprates.

    PubMed

    Viskadourakis, Z; Sunku, S S; Mukherjee, S; Andersen, B M; Ito, T; Sasagawa, T; Panagopoulos, C

    2015-01-01

    Doping a "parent" antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2-xSrxCuO4, La2LixCu1-xO4 and La2CuO4+x. It is proposed that ferroelectricity may result from local CuO6 octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction. PMID:26486276

  13. Prediction of a native ferroelectric metal

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-04-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity--that is, the existence of a switchable intrinsic electric polarization--has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound.

  14. Ferroelectric domain dynamics under an external field

    NASA Astrophysics Data System (ADS)

    Rappe, Andrew; Shin, Young-Han; Grinberg, Ilya; Chen, I.-Wei

    2007-03-01

    Ferroelectric oxides with the perovskite structure are promising materials for nonvolatile random access computer memories. PbZr1-xTixO3 is currently used for this purpose. In these materials, storage of a bit involves the reorientation of polarization, or the movement of a ferroelectric domain wall. However, the intrinsic properties of the polarization reversal process of ferroelectrics at the microscopic level still have not been revealed, either by experiments or computations. In this talk, I will show how this problem can be studied with a multi-scale approach. First, an interatomic potential is parameterized to first-principles calculations, and molecular dynamics (MD) simulations are performed. Second, stochastic Monte Carlo simulations are conducted, with nucleation and growth rates extracted from the MD simulations. For PbTiO3, we find that while the overall domain-wall speed from our calculation is in good agreement with the recent experiments, the size of the critical nucleus is much smaller than predicted from the Miller-Weinreich model. We think that this discrepancy can be explained by a diffuse-boundary model and by the fact that the overall wall motion is controlled by both the nucleation and growth processes.

  15. Ferroelectric-carbon nanotube memory devices

    NASA Astrophysics Data System (ADS)

    Kumar, Ashok; Shivareddy, Sai G.; Correa, Margarita; Resto, Oscar; Choi, Youngjin; Cole, Matthew T.; Katiyar, Ram S.; Scott, James F.; Amaratunga, Gehan A. J.; Lu, Haidong; Gruverman, Alexei

    2012-04-01

    One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.

  16. Eutectic mixtures of ferroelectric liquid crystals

    SciTech Connect

    Goodby, J.W. ); Chin, E. ); Patel, J.S. )

    1989-11-30

    Ferroelectric liquid crystals show potential as the optically and electrically active media in a variety of applications. However, it is considered unlikely that a single individual compound will possess all of the desired properties required by device applications, and therefore it is to be expected that it will be necessary to mix compounds together in order to obtain a suitable blend. In this study we have examined how the pitch of the helix and the magnitude of the spontaneous polarization of the ferroelectric smectic C* phase vary as a function of concentration when two materials of opposite twist and with the same (or opposite) polarization directions are mixed together. In some cases the ferroelectric phase(s) was found to disappear in the central region of the phase diagram, only to be replaced by the nonferroelectric smectic B phase. This type of behavior was found to happen even when the two components were of the same generic family. Changes in phase type were detected optically and also from the switching behavior in individual mixtures. This second approach offers a new method of monitoring certain phase changes that occur in a phase diagram.

  17. A methodology for incorporating web technologies into a computer-based patient record, with contributions from cognitive science.

    PubMed

    Webster, Charles

    2002-12-18

    Cognitive science is a rich source of insight for creative use of new Web technologies by medical informatics workers. I outline a project to Web-enable an existing computer-based patient record (CPR) in the context of ideas from philosophy, linguistics, artificial intelligence, and cognitive psychology. Web prototypes play an important role (a) because Web technology lends itself to rapid prototype development, and (b) because prototypes help team members bridge among disparate medical, computing, and business ontologies. Six Web-enabled CPR prototypes were created and ranked. User scenarios were generated using a user communication matrix. Resulting prototypes were compared according to the degree to which they satisfied medical, computing, and business constraints. In a different organization, or at different time, candidate prototypes and their ranking might have been different. However, prototype generation and comparison are fundamentally influenced by factors usefully understood in a cognitive science framework. PMID:12467789

  18. A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Miranda, Felix A.; VanKeuls, Fred W.

    1998-01-01

    A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

  19. Correlationally Assessing the Relationship of Information Technology Investments in Electronic Medical Records to Business Value

    ERIC Educational Resources Information Center

    Richardson, Daniel J.

    2009-01-01

    The lag in information exchange and assimilation adoption experienced by modern primary care physicians in the conduct of evidence based medicine may be affecting health care system productivity and patient quality of care. Further, interest in whether or not information technology (IT) investments show an increase in business value has increased…

  20. Unintended Consequences: New Materialist Perspectives on Library Technologies and the Digital Record

    ERIC Educational Resources Information Center

    Manoff, Marlene

    2013-01-01

    Digital technology has irrevocably altered the nature of the archive. Drawing on materialist critiques and the evolving field of media archaeology, this essay explores new strategies for understanding the implications of computer networks in libraries. Although a significant portion of the contemporary literature within Library and Information…

  1. Assessing Factors Affecting Physician's Intention to Adopt Biometric Authentication Technology in Electronic Medical Records

    ERIC Educational Resources Information Center

    Corazao, Cesar E.

    2014-01-01

    The Health Insurance Portability and Accountability Act of 1996 (HIPAA) regulated the privacy and security of patient information. Since HIPPA became a law, hospital operators have struggled to comply fully with its security and privacy provisions. The proximity-based biometric authentication (PBBA) technology evolved in last decade to help…

  2. Secretly Recording the Police: The Confluence of Communication, Culture, and Technology in the Public Sphere

    ERIC Educational Resources Information Center

    Schaefer, Zachary A.

    2012-01-01

    Mobile communication technologies have changed the way that police do their job. Since the Rodney King beating outside of Los Angeles in 1991, literally thousands of police brutality videos have surfaced on the internet that document perceived acts of violence carried out against seemingly defenseless perpetrators. Police organizations throughout…

  3. Ab initio study of shear strain effects on ferroelectricity at PbTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Van Truong, Do; Hung, Nguyen Tuan; Shimada, Takahiro; Kitamura, Takayuki

    2012-08-01

    Ferroelectric thin film with the perovskite ABO3 structure have been widely used in technology applications, e.g., actuators in MEMS/NEMS and nonvolatile random access memories (FeRAM). In order to clarify the effect of the shear strain on the ferroelectricity, the PbTiO3 thin film as a typical one is chosen. The focus of this study is to put on the PbO-terminated (1​ × ​1) and c(2​ × ​2) surfaces and the TiO2-terminated (1​ × ​1) surface. Based on ab initio density functional theory calculations with the local density approximation, we have found out that in both the PbO and TiO2-terminated (1​ × ​1) models, the ferroelectricity in the PbO layers was enhanced under the positive shear strain while it was suppressed under the negative one. For the TiO2 layers, the ferroelectricity was slightly enhanced and sharply suppressed under the positive and negative shear strains, respectively. In the PbO-terminated (2​ × ​2) model, the AFE phase was suppressed by the FE phase under the positive shear strain while the opposite trend was found under the negative shear strain. For the PbO layers, the ferroelectricity was enhanced under the positive and negative shear strains. For the TiO2 layers, the influence of the negative shear strain on the ferroelectricity was larger than that of the positive one. In addition, the ideal strength of the PbTiO3 thin film with the different terminations was investigated as well.

  4. Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.

    SciTech Connect

    Aggarwal, S.; Auciello, O.; Dhote, A. M.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Muller, A. H.; Ramesh, R.

    1999-06-29

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMS) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and device processes relevant to device development. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed. Direct imaging of ferroelectric domains under applied electric fields can provide valuable information to understand domain dynamics in ferroelectric films. We discuss results of piezoresponse scanning force microscopy (SFM) imaging for nanoscale studies of polarization reversal and retention loss in Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT)-based capacitors. Another powerful technique suitable for in situ, real-time characterization of film growth processes and ferroelectric film-based device operation is based on synchrotrons X-ray scattering, which is currently being implemented at Argonne National Laboratory.

  5. Patterned Ferroelectric Films for Tunable Microwave Devices

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; Mueller, Carl H.

    2008-01-01

    Tunable microwave devices based on metal terminals connected by thin ferroelectric films can be made to perform better by patterning the films to include suitably dimensioned, positioned, and oriented constrictions. The patterns can be formed during fabrication by means of selective etching processes. If the width of the ferroelectric film in such a device is reduced at one or more locations, then both the microwave field and any applied DC bias (tuning) electric field become concentrated at those locations. The magnitudes of both the permittivity and the dielectric loss of a ferroelectric material are reduced by application of a DC field. Because the concentration of the DC field in the constriction(s) magnifies the permittivity- and loss-reducing effects of the applied DC voltage, the permittivity and dielectric loss in the constriction(s) are smaller in the constriction(s) than they are in the wider parts of the ferroelectric film. Furthermore, inasmuch as displacement current must flow through either the constriction(s) or the low-loss dielectric substrate, the net effect of the constriction(s) is equivalent to that of incorporating one or more low-loss, low-permittivity region(s) in series with the high-loss, high-permittivity regions. In a series circuit, the properties of the low-capacitance series element (in this case, the constriction) dominate the overall performance. Concomitantly, the capacitance between the metal terminals is reduced. By making the capacitance between the metal terminals small but tunable, a constriction increases the upper limit of the frequency range amenable to ferroelectric tuning. The present patterning concept is expected to be most advantageous for devices and circuits that must operate at frequencies from about 4 to about 60 GHz. A constriction can be designed such that the magnitude of the microwave electric field and the effective width of the region occupied by the microwave electric field become functions of the applied DC

  6. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  7. Polarization and polarization fatigue in ferroelectrics

    NASA Astrophysics Data System (ADS)

    Du, Xiaofeng

    This thesis addresses some fundamental issues in ferroelectricity and its applications through a computational and experimental effort. It focuses on a variety of perovskite-type ferroelectric oxides and investigates the physical basis for spontaneous polarization, domain wall dynamics, and texture development in thin film applications. The dipole-dipole interactions between ionic species in perovskite-type materials have been calculated to determine the local field and the lattice instability. Different ferroelectric and anti-ferroelectric polarization transitions can be realized by taking into account the structure distortion of the parent perovskites. We find the local field is enhanced by short range disorder and its nature varies from disorder to disorder, causing polarization transitions in non-(100) directions. The molecular field theory has also been extended to layered perovskites, which favors in-plane polarization over c-polarization. These theoretical predictions are in agreement with the experimental observations of various perovskites and layered perovskites in both single crystal and thin film forms. Domain switching in PZT has been studied by probing the frequency dependency of polarization hysteresis. A picture of thermally activated domain wall movement is established from the frequency spectra of coercive field. The field dependence of domain wall bulging and the nature of the binding between pinning obstacles and the walls are inferred from such a study. Consistent with this picture, polarization fatigue can be defined as a process of increasing the resistance from pinning defects to domain wall motion. The chemical species that act as pinning defects have been identified through model experiments that control carrier injection, electrode interfaces, and film compositions. Based on these observations, a methodology is proposed to evaluate and predict the fatigue damage of both PZT and layered perovskite thin films. Processing of layered

  8. Recording and Reading Alchemy and Art-Technology in Medieval and Premodern German Recipe Collections.

    PubMed

    Neven, Sylvie

    2016-01-01

    In the Middle Ages and the premodern period knowledge of alchemical practices and materials was transmitted via collections of recipes often grouped concomitantly with art-technological instructions. In both alchemy and chemical technology particular importance is placed on artisanal and craft practices. Both are concerned with the description of colours. Both require procedures involving precise and specifically defined actions, prescriptions and ingredients. Assuming that alchemical and artistic texts have the same textual format, this raises the question: were they produced, diffused and read by the same people? This paper investigates the authorship and the context of production behind a sample of German alchemical manuscripts dating from the fourteenth to the sixteenth century. It scrutinizes their process of production, compilation and dissemination. This paper also sheds light on the various types of marginalia, and correlates them with their diverse functions. It thus delivers significant information about the readers and users of these manuscripts. PMID:27071299

  9. Recording and Reading Alchemy and Art-Technology in Medieval and Premodern German Recipe Collections.

    PubMed

    Neven, Sylvie

    2016-01-01

    In the Middle Ages and the premodern period knowledge of alchemical practices and materials was transmitted via collections of recipes often grouped concomitantly with art-technological instructions. In both alchemy and chemical technology particular importance is placed on artisanal and craft practices. Both are concerned with the description of colours. Both require procedures involving precise and specifically defined actions, prescriptions and ingredients. Assuming that alchemical and artistic texts have the same textual format, this raises the question: were they produced, diffused and read by the same people? This paper investigates the authorship and the context of production behind a sample of German alchemical manuscripts dating from the fourteenth to the sixteenth century. It scrutinizes their process of production, compilation and dissemination. This paper also sheds light on the various types of marginalia, and correlates them with their diverse functions. It thus delivers significant information about the readers and users of these manuscripts.

  10. Future Development of Dense Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.

    2001-01-01

    The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

  11. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  12. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  13. Tunable ferroelectric meta-material phase shifter embedded inside low temperature co-fired ceramics (LTCC)

    NASA Astrophysics Data System (ADS)

    Tork, Hossam S.

    This dissertation describes electrically tunable microwave devices utilizing low temperature co-fired ceramics (LTCC) and thick film via filled with the ferroelectric materials barium strontium titanate (BST) and barium zirconate titanate (BZT). Tunable ferroelectric capacitors, zero meta-material phase shifters, and tunable meta-material phase shifters are presented. Microwave phase shifters have many applications in microwave devices. They are essential components for active and passive phased array antennas and their most common use is in scanning phased array antennas. They are used in synthetic aperture radars (SAR), low earth orbit (LEO) communication satellites, collision warning radars, and intelligent vehicle highway systems (IVHS), in addition to various other applications. Tunable ferroelectric materials have been investigated, since they offer the possibility of lowering the total cost of phased arrays. Two of the most promising ferroelectric materials in microwave applications are BST and BZT. The proposed design and implementation in this research introduce new types of tunable meta-material phase shifters embedded inside LTCC, which use BST and BZT as capacitive tunable dielectric material controlled by changing the applied voltage. This phase shifter has the advantages of meta-material structures, which produce little phase error and compensation while having the simultaneous advantage of using LTCC technology for embedding passive components that improve signal integrity (several signal lines, power planes, and ground planes) by using different processes like via filling, screen printing, laminating and firing that can be produced in compact sizes at a low cost. The via filling technique was used to build tunable BST, BZT ferroelectric material capacitors to control phase shift. Finally, The use of the proposed ferroelectric meta-material phase shifter improves phase shifter performance by reducing insertion loss in both transmitting and receiving

  14. The development and design of an electronic patient record using open source web-based technology.

    PubMed

    Syed-Mohamad, Sharifa Mastura; Ali, Siti Hawa; Mat-Husin, Mohd Nazri

    2010-01-01

    This paper describes the method used to develop the One Stop Crisis Centre (OSCC) Portal, an open source web-based electronic patient record system (EPR) for the One Stop Crisis Center, Hospital Universiti Sains Malaysia (HUSM) in Kelantan, Malaysia. Features and functionalities of the system are presented to demonstrate the workflow. Use of the OSCC Portal improved data integration and data communication and contributed to improvements in care management. With implementation of the OSCC portal, improved coordination between disciplines and standardisation of data in HUSM were noticed. It is expected that this will in turn result in improved data confidentiality and data integrity. The collected data will also be useful for quality assessment and research. Other low-resource centers with limited computer hardware and access to open-source software could benefit from this endeavour. PMID:20335647

  15. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of

  16. Ferroelectric domain structure of Pb(Zr /sub 52/Ti /sub 48/)O/sub 3/

    SciTech Connect

    Goo, E.K.; Mishra, R.K.

    1980-08-01

    Ferroelectric domains are twins that are formed when PZT undergoes a phase transformation from a non-ferroelectric cubic phase to a ferroelectric tetragonal phase upon cooling below approx. 375/sup 0/C. The tetragonal phase is spontaneously polarized in the direction of c-axis, making each twin a ferroelectric domain.

  17. Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

    NASA Technical Reports Server (NTRS)

    Eskridge, Michael; Gui, Xiao; MacLeod, Todd; Ho, Fat D.

    2011-01-01

    Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.

  18. Giant electrocaloric effect in ferroelectric nanotubes near room temperature.

    PubMed

    Liu, Man; Wang, Jie

    2015-01-12

    Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO₃ nanotubes, which is several times in magnitude larger than that of PbTiO₃ thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering.

  19. Toward Ferroelectric Control of Monolayer MoS2.

    PubMed

    Nguyen, Ariana; Sharma, Pankaj; Scott, Thomas; Preciado, Edwin; Klee, Velveth; Sun, Dezheng; Lu, I-Hsi Daniel; Barroso, David; Kim, SukHyun; Shur, Vladimir Ya; Akhmatkhanov, Andrey R; Gruverman, Alexei; Bartels, Ludwig; Dowben, Peter A

    2015-05-13

    The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.

  20. Enhanced electromechanical response of ferroelectrics due to charged domain walls

    PubMed Central

    Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Gureev, Maxim; Setter, Nava

    2012-01-01

    While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are largely ignored in this search. Here we demonstrate a mechanism that leads to a strong enhancement of the dielectric and piezoelectric properties in ferroelectrics with increasing density of charged domain walls. We show that an incomplete compensation of bound polarization charge at these walls creates a stable built-in depolarizing field across each domain leading to increased electromechanical response. Our model clarifies a long-standing unexplained effect of domain wall density on macroscopic properties of domain-engineered ferroelectrics. We show that non-toxic ferroelectrics like BaTiO3 with dense patterns of charged domain walls are expected to have strongly enhanced piezoelectric properties, thus suggesting a new route to high-performance, lead-free ferroelectrics. PMID:22434191

  1. Mechanically-induced resistive switching in ferroelectric tunnel junctions.

    PubMed

    Lu, H; Kim, D J; Bark, C-W; Ryu, S; Eom, C B; Tsymbal, E Y; Gruverman, A

    2012-12-12

    Recent advances in atomic-precision processing of oxide ferroelectrics-materials with a stable polarization that can be switched by an external electric field-have generated considerable interest due to rich physics associated with their fundamental properties and high potential for application in devices with enhanced functionality. One of the particularly promising phenomena is the tunneling electroresistance (TER) effect-polarization-dependent bistable resistance behavior of ferroelectric tunnel junctions (FTJ). Conventionally, the application of an electric field above the coercive field of the ferroelectric barrier is required to observe this phenomenon. Here, we report a mechanically induced TER effect in ultrathin ferroelectric films of BaTiO(3) facilitated by a large strain gradient induced by a tip of a scanning probe microscope (SPM). The obtained results represent a new paradigm for voltage-free control of electronic properties of nanoscale ferroelectrics and, more generally, complex oxide materials. PMID:23181389

  2. Polar distortions in hydrogen-bonded organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Stroppa, Alessandro; di Sante, Domenico; Horiuchi, Sachio; Tokura, Yoshinori; Vanderbilt, David; Picozzi, Silvia

    2011-07-01

    Although ferroelectric compounds containing hydrogen bonds were among the first to be discovered, organic ferroelectrics are relatively rare. The discovery of high polarization at room temperature in croconic acid [Horiuchi , Nature (London) NATUAS0028-083610.1038/nature08731463, 789 (2010)] has led to a renewed interest in organic ferroelectrics. We present an ab initio study of two ferroelectric organic molecular crystals, 1-cyclobutene-1,2-dicarboxylic acid (CBDC) and 2-phenylmalondialdehyde (PhMDA). By using a distortion-mode analysis we shed light on the microscopic mechanisms contributing to the polarization, which we find to be as large as 14.3 and 7.0 μC/cm2 for CBDC and PhMDA, respectively. These results suggest that it may be fruitful to search among known but poorly characterized organic compounds for organic ferroelectrics with enhanced polar properties suitable for device applications.

  3. Patients welcome the Sickle Cell Disease Mobile Application to Record Symptoms via Technology (SMART).

    PubMed

    Shah, Nirmish; Jonassaint, Jude; De Castro, Laura

    2014-01-01

    The widespread use of mobile phones among patients provides a unique opportunity for the development of mobile health intervention designed specifically for sickle cell disease, which will improve self-management as well as health care delivery. Our objective was to determine the receptiveness of patients with sickle cell disease to technology and a mobile application (app) designed for sickle cell disease. Phase I included 100 patients who completed a survey inquiring about receptiveness to technology and use of mobile devices to self-manage and communicate with providers. Phase II surveyed 17 additional patients who tested a newly developed sickle cell disease app, to report its usability and utility. In Phase I, on a 0-10 Likert scale where 0 is not comfortable, and 10 is extremely comfortable, 87.0% of participants reported >5 comfort level using a mobile device for health care management. Participants were comfortable with texting (81.0%) and emailing (77.0%) but not with social media (40.0%). Most participants (84.0%) owned computer devices (desktops, laptops, tablets, or iPads), and 92.0% owned mobile devices. In Phase II, participants reported that the app tested was useful to track pain (88.0%), and 94.0% reported that it was easy to use, practical, and useful for health self-management. All reported that the app was useful to help one communicate with providers. Following the use of our app, patients found it an extremely valuable tool for tracking pain, health management, and communicating with providers. We conclude that mobile technology might provide an appropriate venue for sickle cell disease healthcare management. PMID:24512633

  4. Magnetoelectric Coupling, Ferroelectricity, and Magnetic Memory Effect in Double Perovskite La3Ni2NbO9.

    PubMed

    Dey, K; Indra, A; De, D; Majumdar, S; Giri, S

    2016-05-25

    We observe ferroelectricity in an almost unexplored double perovskite La3Ni2NbO9. Ferroelectricity appears below ∼60 K, which is found to be correlated with the significant magnetostriction. A reasonably large value of spontaneous electric polarization is recorded to be ∼260 μC/m(2) at 10 K for E = 5 kV/cm, which decreases signifi- cantly upon application of a magnetic field (H), suggesting considerable magnetoelectric coupling. The dielectric permittivity is also influenced by H below the ferroelectric transition. The magnetodielectric response scales linearly to the squared magnetization, as described by the Ginzburg-Landau theory. Meticulous studies of static and dynamic features of dc magnetization and frequency dependent ac susceptibility results suggest spin-glass state below 29 K. Intrinsic magnetic memory effect is observed from zero-field cooled magnetization and isothermal remanent magnetization studies, also pointing spin-glass state below 29 K. Appearance of ferroelectricity together with a significant magnetoelectric coupling in absence of conventional long-range magnetic order is promising for searching new magnetoelectric materials. PMID:27136317

  5. The Modification of Ferroelectric Surfaces for Catalysis

    NASA Astrophysics Data System (ADS)

    Herdiech, Matthew William

    Ferroelectrics are a class of materials in which a net dipole can be associated with each repeat unit, resulting in a potentially large electric field through the material. The ability to reversibly switch the polarization direction by applying an external electric field distinguishes ferroelectrics from polar orientations of ordinary materials. Recent studies exploring the reactivity of ferroelectric surfaces toward polar molecules have shown that the heats of adsorption for these molecules are polarization dependent, but the surfaces tend to be unreactive. Despite the inertness of ferroelectric surfaces, their use as supports for catalytically active materials could yield novel reactivity. As even metal oxides that are generally considered inert can influence the catalytic properties of supported layers, a ferroelectric support may offer the opportunity to modulate catalytic activity since charge compensation of the polar surfaces might include chemical and electronic reconstructions of the active layer. In this thesis, the fabrication of active layers with polarization dependent properties was investigated by coating ferroelectric substrates with catalytically active oxides that are likely to grow in a layer-by-layer manner. Two systems in particular were explored: chromium oxide on ferroelectric lithium niobate (Cr2O3/LiNbO3), and ruthenium oxide on ferroelectric lead zirconate titanate (RuO2/Pb(Zr0.2Ti0.8)O 3). The chromium oxide and ruthenium oxide films were characterized with X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and reflection high energy electron diffraction (RHEED). Additionally, the chromium oxide films were characterized with X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements, and the ruthenium oxide films were characterized with ion scattering spectroscopy (ISS) measurements. The reactivity of the films was investigated using temperature programmed desorption (TPD) measurements. In particular

  6. Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory

    NASA Astrophysics Data System (ADS)

    Kang, Seung-Kuk; Rhie, Hyoung-Seub; Kim, Hyun-Ho; Koo, Bon-Jae; Joo, Heung-Jin; Park, Jung-Hun; Kang, Young-Min; Choi, Do-Hyun; Lee, Sung-Young; Jeong, Hong-Sik; Kim, Kinam

    2005-04-01

    We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during operation, in which the main time delay retardation observed in EEPROM embedded smartcards occurs because of slow data update time. EEPROM-embedded smartcards have EEPROM, ROM, and SRAM. To utilize FRAM-embedded smartcards, we should integrate submicron ferroelectric capacitors into embedded logic complementary metal oxide semiconductor (CMOS) without the degradation of the ferroelectric properties. We resolved this process issue from the viewpoint of the back end of line (BEOL) process. As a result, we realized a highly reliable sensing window for FRAM-embedded smartcards that were realized by novel integration schemes such as tungsten and barrier metal (BM) technology, multilevel encapsulating (EBL) layer scheme and optimized intermetallic dielectrics (IMD) technology.

  7. Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Xiao, Juanxiu; Wang, Jingxian; Zhang, Lei; Deng, Jinyu; Liu, Ziyan; Dong, Zhili; Wang, John; Chen, Jingsheng

    2016-06-01

    Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

  8. Novel Aspects of Holographic Technologies and Applications Based on New Stationary and Dynamic Holographic Recording Media

    NASA Astrophysics Data System (ADS)

    Semenova, Irina

    2002-06-01

    This report results from a contract tasking of the Ioffe Institute as follows: Historically Russian holographic research laboratories developed many unique materials having no analogs in other countries. This effort leverages that expertise and investigates two aspects related to correction of distortion of laser communications signals: 1. Development of the technique for compensation of atmospheric distortions in laser communication systems by means of dynamic holograms. We expect that depending upon the chosen holographic medium the following operational characteristics are attainable: Duration of a write/read/erase cycle - 1.0 msecond; Quality of correction - 80%; Improvement of the signal to noise ratio - 90%. The device will be automatic, real-time and reliable. 2. Development of a new holographic material based on self-developing dichromated colloids, for recording of stationary volume holograms. This task will include measurement of the optical effects caused by photo induced structural changes and hopes to achieve a resolution of up to 5000 l/mm and sensitivity down to 100 mJ/cm2.

  9. Crash reconstruction and injury-mechanism analysis using event data recorder technology.

    PubMed

    Donnelly, B R; Galganski, R A; Lawrence, R D; Blatt, A

    2001-01-01

    Sophisticated onboard crash-event data recorders (EDRs) that log key vehicle dynamics information can be used to improve crash reconstruction, model occupant response, study the mechanisms of injury, and estimate occupant injury probabilities in near-real time. Such an EDR was developed and utilized as part of the Automatic Collision Notification (ACN) system for the National Highway Traffic Safety Administration. This paper presents the results of a study in which the reconstruction of an actual crash was augmented using EDR/ACN-supplied three-dimensional acceleration and other data in a vehicle occupant model configured using the Articulated Total Body (ATB) computer code. ATB-generated occupant-motion imagery and body-region acceleration response information provided valuable insights that permitted crash-reconstruction specialists to ascertain the true nature of the collision and identify the probable cause of an injury suffered by one of the victims. The authors also posit that the use of EDR data from an ACN-type system as inputs to occupant crash-response modeling may be someday support crash-victim emergency medical treatment and triage.

  10. Wear-time recording during early Class III facemask treatment using TheraMon chip technology.

    PubMed

    Stocker, Bruce; Willmann, Jan H; Wilmes, Benedict; Vasudavan, Sivabalan; Drescher, Dieter

    2016-09-01

    Successful intervention in a developing Class III malocclusion with facemask protraction therapy depends on a patient's ability to adhere to the recommendations for duration of appliance wear. In this article, we report the introduction of a novel approach for tracking of the duration of application of a protraction facemask, with the incorporation of a "FaceMon" sensor (TheraMon, microelectronic system; MC Technology GmbH, Hargelsberg, Austria) to track wear time. A 9-year-old boy with a Class III malocclusion was successfully treated with a modified alternate rapid maxillary expansion and constriction protocol and intermittent application of a hybrid hyrax-protraction facemask combination. The average duration of wear of the facemask was measured at 10.8 hours per day. The use of an objective measuring device may have implications for the development of treatment strategies, since patient responses may be able to calibrated in relation to compliance. PMID:27585783

  11. Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor

    NASA Astrophysics Data System (ADS)

    Mehta, Hema; Kaur, Harsupreet

    2016-09-01

    In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon. A complete drain current model has been developed by using Landau-Khalatnikov equation and parabolic potential approximation to analyze device behavior in different operating regions. It has been demonstrated that DGFJL transistor acts as a step-up voltage transformer and exhibits subthreshold slope values less than 60 mV/dec. In order to assess the advantages offered by the proposed device, extensive comparative study has been done with equivalent Double Gate Junctionless Transistor (DGJL) transistor with gate insulator thickness same as ferroelectric gate stack thickness of DGFJL transistor. It is shown that incorporation of ferroelectric layer can overcome the variability issues observed in JL transistors. The device has been studied over a wide range of parameters and bias conditions to comprehensively investigate the device design guidelines to obtain a better insight into the application of DGFJL as a potential candidate for future technology nodes. The analytical results so derived from the model have been verified with simulated results obtained using ATLAS TCAD simulator and a good agreement has been found.

  12. Time-Resolved, Electric-Field-Induced Domain Switching and Strain in Ferroelectric Ceramics and Crystals

    NASA Astrophysics Data System (ADS)

    Jones, Jacob L.; Nino, Juan C.; Pramanick, Abhijit; Daniels, John E.

    Ferroelectric materials are used in a variety of applications including diagnostic and therapeutic ultrasound, sonar, vibration and displacement sensors, and non-volatile random access memory. The electromechanical response in ferroelectric materials is comprised of both intrinsic (piezoelectric lattice strain) and extrinsic (e.g., domain wall motion) components that are expressed as characteristic changes in the diffraction pattern. By applying slow, step-wise changes in the electric field, prior quasi-dynamic diffraction measurements have demonstrated both lattice strains and non-180 ∘ domain switching at fields exceeding the macroscopically defined coercive field. However, the loading conditions which most replicate real device operation involve dynamic actuation with sub-coercive, cyclic electric fields. At these operating conditions, extrinsic irreversibilities lead to hysteresis, frequency dispersion and nonlinearity of macroscopic properties. Observation of strain and domain switching at these cyclic loading conditions is an area in which we have reported recent advances using stroboscopic techniques. This chapter highlights the electric-field-induced lattice strain and kinetics of domain switching in a number of materials including technologically-relevant lead zirconate titanate (PZT) ceramics and relaxor single crystals. An outlook on the continuing use of time-resolved diffraction techniques in the characterization of ferroelectric materials is also discussed.

  13. Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer

    NASA Astrophysics Data System (ADS)

    Liu, B. T.; Maki, K.; Aggarwal, S.; Nagaraj, B.; Nagarajan, V.; Salamanca-Riba, L.; Ramesh, R.; Dhote, A. M.; Auciello, O.

    2002-05-01

    Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450 °C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories.

  14. Numerical modeling of dielectrics electrocaloric effect near the ferroelectric-paraelectric phase transformation

    NASA Astrophysics Data System (ADS)

    Wang, Yixing; Liu, Liwu; Liu, Yanju; Leng, Jinsong

    2013-08-01

    Dielectrics with great electrocaloric effect (ECE) have great potential to be applied in modern refrigeration industry. Compared with the traditional refrigeration technology, it is environmentally friendly and has a higher efficiency. Researchers have found that compared with ECE occurring in ferroelectric phase, ECE in paraelectric state is giant. This paper is determined on calculating the ECE of several kinds of polar dielectric material so as to find some materials with giant ECE. First, we investigate the theoretical framework of ECE near the Ferroelectric-Paraelectric phase transformation, and we show the formula derivation of ECE near the Ferroelectric-Paraelectric phase transformation in the analytical method of the calculus derivation. Then we deduce the expression of phenomenological study parameters. Finally, we calculate the maximum temperature change, entropy change and the mechanical work of several kinds of dielectrics based on the expression deduced. We successfully find some dielectrics with giant ECE. The paper should offer great help in finding the dielectrics with giant ECE, which is of great value in application.

  15. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

    SciTech Connect

    Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Mueller, A. H.; Ramesh, R.

    1999-08-30

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

  16. Liquid-crystal solid interface structure at the antiferroelectric-ferroelectric phase transition

    NASA Astrophysics Data System (ADS)

    Coleman, D.; Bardon, S.; Radzihovsky, L.; Danner, G.; Clark, N. A.

    2002-12-01

    Total internal reflection is used to probe the molecular organization at the surface of a tilted chiral smectic liquid crystal at temperatures in the vicinity of the bulk antiferroelectric-ferroelectric phase transition. Data are interpreted using an exact analytical solution of a real model for ferroelectric order at the surface. In the mixture T3, ferroelectric surface order is expelled with the bulk ferroelectric-antiferroelectric transition. The conditions for ferroelectric order at the surface of an antiferroelectric bulk are presented.

  17. Piezoelectric activity in Perovskite ferroelectric crystals.

    PubMed

    Li, Fei; Wang, Linghang; Jin, Li; Lin, Dabin; Li, Jinglei; Li, Zhenrong; Xu, Zhuo; Zhang, Shujun

    2015-01-01

    Perovskite ferroelectrics (PFs) have been the dominant piezoelectric materials for various electromechanical applications, such as ultrasonic transducers, sensors, and actuators, to name a few. In this review article, the development of PF crystals is introduced, focusing on the crystal growth and piezoelectric activity. The critical factors responsible for the high piezoelectric activity of PFs (i.e., phase transition, monoclinic phase, domain size, relaxor component, dopants, and piezoelectric anisotropy) are surveyed and discussed. A general picture of the present understanding on the high piezoelectricity of PFs is described. At the end of this review, potential approaches to further improve the piezoelectricity of PFs are proposed.

  18. Asymmetry in ferroelectric polymer laminate composites

    SciTech Connect

    Newman, B.A.; Scheinbeim, J.I.; Su, Ji

    1996-10-01

    Studies of the ferroelectric and piezoelectric properties of composite bilaminates of poly(vinylidene fluoride) and nylon 11 films have shown that the properties of the bilaminates cannot be understood solely in terms of the properties of the individual components. Further, the properties of films which are polarized with the positive voltage on the nylon 11 side are different from those having the positive voltage on the poly(vinylidene fluoride) side. This asymmetry is interpreted as resulting from a region of space charge trapped at the interface between the two layers.

  19. Four-state ferroelectric spin-valve

    PubMed Central

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-01-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. PMID:25961513

  20. Four-state ferroelectric spin-valve

    NASA Astrophysics Data System (ADS)

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-05-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.

  1. Four-state ferroelectric spin-valve.

    PubMed

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-01-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. PMID:25961513

  2. Ferroelectric thickness effects on LaSrMnO3/PbZrTiO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Jinling; Wolf, Evan; Frye, Charles; Chen, Disheng; Polisetty, Srinivas; Holcomb, Mikel; David Lederman Collaboration; Ying-Hao Chu Collaboration

    2011-03-01

    Magnetoelectric (ME) coupling is the coupling of magnetic and electric properties within a material. It allows the possibility of dual control of the material through the manipulation of either electric or magnetic fields and therefore could potentially revolutionize the current technology. However, little is known about the factors that influence the strength of this magnetoelectric coupling. In the presented research, ferromagnetic LSMO and ferroelectric PZT are constructed as wedged adjacent layers for the purpose of studying the coupling effects and physical properties in each layer and the resulting interface. X-ray absorption spectroscopy (XAS) and photoemission electron microscopy (PEEM) are used as the major techniques to map out magnetism, ferroelectricity, and the interfacial coupling. The XAS spectra illustrate a strong effect on the magnetic properties depending on ferroelectric thickness. PEEM images display the magnetic and ferroelectric domains in each material layer, allowing further insight into why the coupling depends on layer thickness. This research will aid the understanding of coupling in not only magnetoelectric heterostructures, but also in other similar complex oxide systems.

  3. Unravelling and controlling hidden imprint fields in ferroelectric capacitors.

    PubMed

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-28

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  4. Carrier density modulation in a germanium heterostructure by ferroelectric switching.

    PubMed

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B; Ren, Yuan; Wu, Xiaoyu; Vasudevan, Rama K; Okatan, M Baris; Jesse, S; Aoki, Toshihiro; McCartney, Martha R; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A

    2015-01-14

    The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect-carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO3 grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO3 polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO3 tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO3 is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

  5. X-ray linear dichroism dependence on ferroelectric polarization.

    PubMed

    Polisetty, S; Zhou, J; Karthik, J; Damodaran, A R; Chen, D; Scholl, A; Martin, L W; Holcomb, M

    2012-06-20

    X-ray absorption spectroscopy and photoemission electron microscopy are techniques commonly used to determine the magnetic properties of thin films, crystals, and heterostructures. Recently, these methods have been used in the study of magnetoelectrics and multiferroics. The analysis of such materials has been compromised by the presence of multiple order parameters and the lack of information on how to separate these coupled properties. In this work, we shed light on the manifestation of dichroism from ferroelectric polarization and atomic structure using photoemission electron microscopy and x-ray absorption spectroscopy. Linear dichroism arising from the ferroelectric order in the PbZr0:2Ti0:8O3 thin films was studied as a function of incident x-ray polarization and geometry to unambiguously determine the angular dependence of the ferroelectric contribution to the dichroism. These measurements allow us to examine the contribution of surface charges and ferroelectric polarization as potential mechanisms for linear dichroism. The x-ray linear dichroism from ferroelectric order revealed an angular dependence based on the angle between the ferroelectric polarization direction and the x-ray polarization axis, allowing a formula for linear dichroism in ferroelectric samples to be defined.

  6. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    SciTech Connect

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up to 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.

  7. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  8. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    PubMed Central

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-01-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. PMID:27122309

  9. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; et al

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  10. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    DOE PAGES

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up tomore » 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.« less

  11. Unravelling and controlling hidden imprint fields in ferroelectric capacitors.

    PubMed

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-01-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. PMID:27122309

  12. Integrated non-planar ferroelectric nanostructures

    NASA Astrophysics Data System (ADS)

    Nonnenmann, Stephen Sommers

    Ferroelectrics (FEs) exhibit stable spontaneous polarization states in the absence of an applied electric field, analogous to other ferroic systems such as ferromagnetics and ferroelastics. Incomplete screening of surface charges along the FE-electrode interface creates a potential gradient across the FE layer. This yields a depolarizing field which greatly suppresses polarization, particularily in systems approaching finite sizes, where surface and interface effects exhibit far more influence than in the bulk. Identifying mechanisms for reducing the detrimental effects of the depolarizing field and maintaining FE stability in finite dimensions remains the largest obstacle in FEs realizing their potential as next generation devices such as electrocaloric coolers, actuators, sensors, photovoltaics, and non-volatile memory elements. This thesis aims to develop a reproducible, versatile synthetic approach towards cylindrical conductive core-ferroelectric perovskite oxide shell nanostructures. The inherent finite curvature produces surface-tension based stresses which may be used to nonlinearily couple to charge, thus mitigating the destabilizing effects of the depolarizing field. This study will show that FE stability is enhanced in curved nanostructures as compared to their planar counterparts. Piezoresponse force microscopy, a modified scan probe technique, will be used to elucidate these effects via imaging and static hysteresis collection. The improved FE stability enables the demonstration of a single, integrated FE field effect transistor test structure, showing nanoscale integration of a FE layer in direct contact with silicon, a notable challenge in developing semiconductor industrial applications.

  13. Ferroelectric based catalysis: Switchable surface chemistry

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  14. Functional ferroelectric tunnel junctions on silicon

    NASA Astrophysics Data System (ADS)

    Guo, Rui; Wang, Zhe; Zeng, Shengwei; Han, Kun; Huang, Lisen; Schlom, Darrell G.; Venkatesan, T.; Ariando; Chen, Jingsheng

    2015-07-01

    The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the “universal memory”. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.

  15. Prediction of a native ferroelectric metal

    PubMed Central

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-01-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity—that is, the existence of a switchable intrinsic electric polarization—has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound. PMID:27040076

  16. Functional ferroelectric tunnel junctions on silicon

    PubMed Central

    Guo, Rui; Wang, Zhe; Zeng, Shengwei; Han, Kun; Huang, Lisen; Schlom, Darrell G.; Venkatesan, T.; Ariando, A; Chen, Jingsheng

    2015-01-01

    The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the “universal memory”. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories. PMID:26215429

  17. Improper ferroelectricity: A theoretical and experimental investigation

    NASA Astrophysics Data System (ADS)

    Hardy, J. R.; Ullman, F. G.

    1984-02-01

    A combined theoretical and experimental study has been made of the origins and properties of the improper ferroelectricity associated with structural modulations of non-zero wavelengths. Two classes of materials have been studied: rare earth molybdates (specifically, gadolinium molybdate: GMO), and potassium selenate and its isomorphs. In the former, the modulation is produced by a zone boundary phonon instability, and in the latter by the instability of a phonon of wave vector approximately two-thirds of the way to the zone-boundary. In the second case the initial result is a modulated structure whose repeat distance is not a rational multiple of the basic lattice repeat distance. This result is a modulated polarization which, when the basic modulation locks in to a rational multiple of the lattice spacing, becomes uniform, and improper ferroelectricity results. The origins of these effects have been elucidated by theoretical studies, initially semi-empirical, but subsequently from first-principles. These complemented the experimental work, which primarily used inelastic light scattering, uniaxial stress, and hydrostatic pressure, to probe the balance between the interionic forces through the effects on the phonons and dielectric properties.

  18. Ferroelectric Liquid Crystals In Aerodynamic Testing

    NASA Technical Reports Server (NTRS)

    Parmar, Devendra S.; Holmes, Harlan K.

    1994-01-01

    The process of simultaneous optical visualization and quantitative measurement of aerodynamic boundary layer parameters requires new concepts, materials and utilization methods. Measurement of shear stress in terms of the transmitted or the reflected light intensity from an aligned ferroelectric liquid crystal (FLC) thin (approx. 1 micron) film deposited on a glass substrate has been the first step in this direction. In this paper, recent progress in utilization of FLC thin films for skin friction measurement and for studying the state of the boundary layer in a wind tunnel environment is reviewed. The switching characteristics of FLCs have been used to measure pressure from the newly devised system of partially exposed polymer dispersed ferroelectric liquid crystals (PEPDFLCs). In this configuration, a PEPDFLC thin film (approx. 10-25 microns) is sandwiched between two transparent conducting electrodes, one a rigid surface and the other a flexible sheet such as polyvinylidene fluoride or mylar. The switching characteristics of the film are a function of the pressure applied to the flexible transparent electrode and a predetermined bias voltage across the two electrodes. The results, considering the dielectrics of composite media, are discussed.

  19. Implementation of health information technology in Veterans Health Administration to support transformational change: telehealth and personal health records.

    PubMed

    Chumbler, Neale R; Haggstrom, David; Saleem, Jason J

    2011-12-01

    The Institute of Medicine report, Crossing the Quality Chasm, called for significant improvements in 6 elements of healthcare performance: safety, effectiveness, patient centeredness, timeliness, efficiency, and equity. To meet the changing care needs of older veterans, many of whom are trying to manage the complexities of their chronic diseases in their own homes, the Veterans Health Administration (VHA) has promoted many of the Institute of Medicine elements by implementing health information technology (health IT), such as telehealth and a personal health record (PHR). To that end, approximately 5 years ago, VHA created the Office of Care Coordination and in particular a patient-centered Care Coordination/Home Telehealth (CCHT) program, which uses telehealth technologies (eg, messaging devices) to coordinate care directly from a patient's home to help self-manage their chronic diseases. VHA has also developed a PHR, My HealtheVet, which is a secure web-based portal that provides veterans the capability to access and manage health information. This article discusses the mechanisms by which these forms of health IT have been implemented to improve access to care and improve health. For telehealth, we present the outcomes from some of the published literature. For PHRs, we outline what is known to date and future research directions. The article also examines some structural, policy-related, and organizational barriers to health IT implementation and offers suggestions for future research.

  20. High temperature coefficient of resistance for a ferroelectric tunnel junction

    SciTech Connect

    Zhao, Xiaolin; Tian, Bobo; Liu, Bolu; Wang, Xudong; Huang, Hai; Wang, Jianlu E-mail: xjmeng@mail.sitp.ac.cn; Zou, Yuhong; Sun, Shuo; Lin, Tie; Han, Li; Sun, Jinglan; Meng, Xiangjian E-mail: xjmeng@mail.sitp.ac.cn; Chu, Junhao

    2015-08-10

    An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

  1. Ferroelectric Polymer Matrix for Probing Molecular Organization in Perylene Diimides.

    PubMed

    Chellappan, Kishore V; Kandappa, Sunil Kumar; Rajaram, Sridhar; Narayan, K S

    2015-01-15

    Ferroelectric films of poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) provide a controlled environment to study the aggregation tendency of functional molecules such as perylene diimides (PDIs). The local electric field and free volume confinement parameters offered by the matrix are tailored to study the organizational and assembly characteritics of molecular acceptors. The optical properties of planar and nonplanar PDIs in the ferroelectric polymer matrix were studied systematically over a wide range that encompassed the ferroelectric transition temperature. This approach provides valuable insight into the properties of molecular materials used in applications ranging from bulk heterostructure-based photovoltaics to nonlinear optical materials.

  2. Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels.

    PubMed

    Stolichnov, Igor; Feigl, Ludwig; McGilly, Leo J; Sluka, Tomas; Wei, Xian-Kui; Colla, Enrico; Crassous, Arnaud; Shapovalov, Konstantin; Yudin, Petr; Tagantsev, Alexander K; Setter, Nava

    2015-12-01

    Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nonthermally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferroelectric Pb(Zr,Ti)O3 using scanning force microscopy down to a temperature of 4 K. New walls created at 4 K by pressure exhibit similar robust and intrinsic conductivity. Atomic resolution electron energy-loss spectroscopy confirms the conductivity confinement at the wall. This work provides a new concept in "domain-wall nanoelectronics".

  3. An unusual route to polarization reversal in ferroelectric ultrathin nanowires

    SciTech Connect

    Herchig, R.; Chang, Ch.-M.; Mani, B. K.; Ponomareva, I.

    2014-07-07

    Ferroelectric nanowires are promising candidates for miniaturized ferroelectric devices. Some potential nanoscale applications of the nanowires, such as ultra high density ferroelectric memory, utilize their reversible polarization. To meet the ever increasing demand for low energy consumption, it is extremely desirable to reduce the operational fields associated with polarization reversal. In this Letter, we use first-principles-based simulations to explore an unusual route to polarization reversal that utilizes a combination of relatively low bias field and THz pulsed radiation. Such an approach allows for lower operational fields and may lead to other potential applications such as THz radiation sensing and remote switches.

  4. Ferroelectric Surface Chemistry: FIrst-principle study of NOx Decomposition

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2012-02-01

    NOx molecules are critical and regulated air pollutants produced during automotive combustion. As part of a long-term effort to design viable catalysts for NOx decomposition that operate at higher temperatures and thus would allow for greater fuel efficiency, we are studying NOx chemistry on ferroelectric perovskite surfaces. Changing the direction of the ferroelectric polarization can modify surface properties and thus can lead to switchable surface chemistry. We will discuss our results for NO and NO2 on the polar (001) surfaces of PbTiO3 as function of ferroelectric polarization, surface stoichiometry, and various molecular or dissociated binding modes.

  5. Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

    NASA Technical Reports Server (NTRS)

    Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

    1998-01-01

    Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

  6. Effect of B2O3-Bi2O3-SiO2-ZnO glass on the dielectric and magnetic properties of ferroelectric/ferromagnetic composite for low temperature cofired ceramic technology

    NASA Astrophysics Data System (ADS)

    Ling, Weiwei; Zhang, Huaiwu; Li, Yuanxun; Chen, Daming; Wen, Qiye; Shen, Jian

    2010-05-01

    Ni-Cu-Zn ferrite/BaTiO3 composites with different additive amounts of B2O3-Bi2O3-SiO2-ZnO (BBSZ) glass have been prepared by a conventional solid-reaction method and sintered at 900 °C to adapt to low temperature cofired ceramic (LTCC) technology. The dielectric and magnetic properties of the composites can be effectively improved with increasing BBSZ content. Here, the BBSZ glass mainly plays two roles, one is as a sintering aid promoting grain growth and the other is as a low permittivity phase or nonmagnetic phase leading to dilution effect on the dielectric or magnetic properties of the composites. The effect degree of above two roles is related to the variation in BBSZ content and has been discussed combining with the effective medium theory. The lower and upper bounds for the effective permittivity and permeability have been given by the Maxwell-Garnett rules.

  7. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    SciTech Connect

    Zhao, X. L.; Wang, J. L. E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T. E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H.

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  8. Ferroelectricity in high-density H2O ice.

    PubMed

    Caracas, Razvan; Hemley, Russell J

    2015-04-01

    The origin of longstanding anomalies in experimental studies of the dense solid phases of H2O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. The presence of local electric fields triggers the preferential parallel orientation of the water molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.

  9. Growth and characterization of organic ferroelectric croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Enders, Axel; Gruverman, Alexei; Xu, Xiaoshan

    Using vapor phase evaporation, we have studied the growth of the croconic acid (CCA) thin films, at various conditions such as temperature, thickness, growth speed, and substrates. The morphology of thin film was measured by atomic force microscopy (AFM); the ferroelectric property was confirmed by piezoresponse force microscopy (PFM). A critical thickness of 40 nm and optimal temperature of -30 celsius were found for continuous films, while the substrate and growth speed are found to play a minimal role. According to the reflection high energy electron diffraction (RHEED), the CCA films are polycrystalline. For a 40 nm continuous film, the roughness is about 3 nm, while the coercive voltage for the ferroelectric domain switching is approximately 7V. This is the first molecule ferroelectric thin film. The successful growth of continuous CCA films enhances the applications potential of CCA, which is a molecular crystal of ferroelectricity. Supported by NSF through UNL MRSEC (DMR-1420645).

  10. Emergence of room-temperature ferroelectricity at reduced dimensions.

    PubMed

    Lee, D; Lu, H; Gu, Y; Choi, S-Y; Li, S-D; Ryu, S; Paudel, T R; Song, K; Mikheev, E; Lee, S; Stemmer, S; Tenne, D A; Oh, S H; Tsymbal, E Y; Wu, X; Chen, L-Q; Gruverman, A; Eom, C B

    2015-09-18

    The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we report that the scale reduction leads to the emergence of an important functional property, ferroelectricity, challenging the long-standing notion that ferroelectricity is inevitably suppressed at the scale of a few nanometers. A combination of theoretical calculations, electrical measurements, and structural analyses provides evidence of room-temperature ferroelectricity in strain-free epitaxial nanometer-thick films of otherwise nonferroelectric strontium titanate (SrTiO3). We show that electrically induced alignment of naturally existing polar nanoregions is responsible for the appearance of a stable net ferroelectric polarization in these films. This finding can be useful for the development of low-dimensional material systems with enhanced functional properties relevant to emerging nanoelectronic devices. PMID:26383947

  11. Enhancement of ferroelectric polarization stability by interface engineering.

    PubMed

    Lu, H; Liu, X; Burton, J D; Bark, C-W; Wang, Y; Zhang, Y; Kim, D J; Stamm, A; Lukashev, P; Felker, D A; Folkman, C M; Gao, P; Rzchowski, M S; Pan, X Q; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-03-01

    By using theoretical predictions based on first-principle calculations, we explore an interface engineering approach to stabilize polarization states in ferroelectric heterostructures with a thickness of just several nanometers. PMID:22278910

  12. Performance of thin-film ferroelectric capacitors for EMC decoupling.

    PubMed

    Li, Huadong; Subramanyam, Guru

    2008-12-01

    This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.

  13. Introduction to the special issue on ultrasonics and ferroelectrics.

    PubMed

    Saniie, Jafar; Kamba, Stanislav

    2014-08-01

    The sixteen articles in this special section were presented at the 2013 IEEE Ultrasonics, Ferroelectrics, and Frequency Control (UFFC) Symposium that was held in Prague, the Czech Republic, from July 21-25, 2013.

  14. Fast Ferroelectric L-Band Tuner for ILC Cavities

    SciTech Connect

    Hirshfield, Jay L

    2010-03-15

    Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

  15. Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

    NASA Astrophysics Data System (ADS)

    Klug, Jeffrey A.

    The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

  16. Novel monolithic phase shifter combining ferroelectrics and high temperature superconductors

    NASA Astrophysics Data System (ADS)

    Jackson, Charles M.; Kobayashi, June H.; Lee, Alfred; Pettiette-Hall, Claire; Burch, John F.; Hu, Roger; Hilton, Rick; McDade, Jim

    1992-12-01

    A novel phase shifter that combines the dielectric properties of a ferroelectric material SrTiO3 and the low loss of high-temperature superconductor (HTS) films is presented. Results show that the maximum phase shift of 8 percent was obtained at 29 K and greater phase shifts are possible with higher voltage bias values. Particular attention is given to the compatability of YBa2Cu3O7-x and a broad class of ferroelectric materials.

  17. Visualization of ferroelectric domains in bulk single crystals

    NASA Astrophysics Data System (ADS)

    Soergel, E.

    2005-10-01

    In recent years ferroelectric domain patterning has become a popular topic of physical research because it enables photonic applications as well as data storage. For generation of tailored domain structures and for further understanding of ferroelectricity, a visualization of the domain patterns is required. A large number of imaging techniques have therefore been developed. This review summarizes these techniques and highlights systematically their strengths and weaknesses.

  18. Studies of ferroelectric and dielectric properties of pure and doped barium titanate prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Bisen, Supriya; Mishra, Ashutosh; Jarabana, Kanaka M.

    2016-05-01

    In this work, Barium Titanate (BaTiO3) powders were synthesized via Sol-Gel auto combustion method using citric acid as a chelating agent. We study the behavior of ferroelectric and dielectric properties of pure and doped BaTiO3 on different concentration. To understand the phase and structure of the powder calcined at 900°C were characterized by X-ray Diffraction shows that tetragonal phase is dominant for pure and doped BTO and data fitted by Rietveld Refinement. Electric and Dielectric properties were characterized by P-E Hysteresis and Dielectric measurement. In P-E measurement ferroelectric loop tracer applied for different voltage. The temperature dependant dielectric constant behavior was observed as a function of frequency recorded on hp-Hewlett Packard 4192A, LF impedance, 5Hz-13Hz analyzer.

  19. Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

    SciTech Connect

    Paul, Amitesh Reitinger, Christoph; Kreuzpaintner, Wolfgang; Böni, Peter; Autieri, Carmine; Sanyal, Biplab; Jutimoosik, Jaru; Yimnirun, Rattikorn; Bern, Francis; Esquinazi, Pablo; Korelis, Panagiotis

    2014-07-14

    Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO{sub 3}) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μ{sub B}/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO{sub 3} layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic moments in the inner ferromagnetic layers.

  20. Unexpected controllable pair-structure in ferroelectric nanodomains.

    PubMed

    Ivry, Yachin; Chu, Daping; Scott, James F; Salje, Ekhard K H; Durkan, Colm

    2011-11-01

    The imminent inability of silicon-based memory devices to satisfy Moore's Law is approaching rapidly. Controllable nanodomains of ferroic systems are anticipated to enable future high-density nonvolatile memory and novel electronic devices. We find via piezoresponse force microscopy (PFM) studies on lead zirconate titanate (PZT) films an unexpected nanostructuring of ferroelectric-ferroelastic domains. These consist of c-nanodomains within a-nanodomains in proximity to a-nanodomains within c-domains. These structures are created and annihilated as pairs, controllably. We treat these as a new kind of vertex-antivertex pair and consider them in terms of the Srolovitz-Scott 4-state Potts model, which results in pairwise domain vertex instabilities that resemble the vortex-antivortex mechanism in ferromagnetism, as well as dislocation pairs (or disclination pairs) that are well-known in nematic liquid crystals. Finally, we show that these nanopairs can be scaled up to form arrays that are engineered at will, paving the way toward facilitating them to real technologies.

  1. Diffuse Scattering from Lead-Containing Ferroelectric Perovskite Oxides

    DOE PAGES

    Goossens, D. J.

    2013-01-01

    Ferroelectric materials rely on some type of non-centrosymmetric displacement correlations to give rise to a macroscopic polarisation. These displacements can show short-range order (SRO) that is reflective of the local chemistry, and so studying it reveals important information about how the structure gives rise to the technologically useful properties. A key means of exploring this SRO is diffuse scattering. Conventional structural studies use Bragg peak intensitiesto determine the average structure. In a single crystal diffuse scattering (SCDS) experiment, the coherent scattered intensity is measured at non-integer Miller indices, and can be used to examine the population of local configurations. Thismore » is because the diffuse scattering is sensitive to two-body averages, whereas the Bragg intensity gives single-body averages. This review outlines key results of SCDS studies on several materials and explores the similarities and differences in their diffuse scattering. Random strains are considered, as are models based on a phonon-like picture or a more local-chemistry oriented picture. Limitations of the technique are discussed.« less

  2. New modalities of strain-control of ferroelectric thin films.

    PubMed

    Damodaran, Anoop R; Agar, Joshua C; Pandya, Shishir; Chen, Zuhuang; Dedon, Liv; Xu, Ruijuan; Apgar, Brent; Saremi, Sahar; Martin, Lane W

    2016-07-01

    Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

  3. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    SciTech Connect

    Cao, Ye; Ievlev, Anton V.; Kalinin, Sergei V.; Maksymovych, Petro; Morozovska, Anna N.; Chen, Long-Qing

    2015-07-13

    Conducting characteristics of topological defects in ferroelectric materials, such as charged domain walls, engendered a broad interest on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics still remains full of unanswered questions and becomes yet more relevant over the growing interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}) junction in applied electric field. We revealed an up to 10-fold local enhancement of electric field realized by large polarization gradient and over-polarization effects due to inherent non-linear dielectric properties of Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The observed field enhancement can be considered on similar grounds as increased doping level, giving rise to reduced switching bias and threshold voltages for charge injection, electrochemical and photoelectrochemical processes.

  4. Chemical solution growth of ferroelectric oxide thin films and nanostructures.

    PubMed

    Bassiri-Gharb, Nazanin; Bastani, Yaser; Bernal, Ashley

    2014-04-01

    Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics.

  5. Nanostructured ferroelectrics: fabrication and structure-property relations.

    PubMed

    Han, Hee; Kim, Yunseok; Alexe, Marin; Hesse, Dietrich; Lee, Woo

    2011-10-25

    With the continued demand for ultrahigh density ferroelectric data storage applications, it is becoming increasingly important to scale the dimension of ferroelectrics down to the nanometer-scale region and to thoroughly understand the effects of miniaturization on the materials properties. Upon reduction of the physical dimension of the material, the change in physical properties associated with size reduction becomes extremely difficult to characterize and to understand because of a complicated interplay between structures, surface properties, strain effects from substrates, domain nucleation, and wall motions. In this Review, the recent progress in fabrication and structure-property relations of nanostructured ferroelectric oxides is summarized. Various fabrication approaches are reviewed, with special emphasis on a newly developed stencil-based method for fabricating ferroelectric nanocapacitors, and advantages and limitations of the processes are discussed. Stress-induced evolutions of domain structures upon reduction of the dimension of the material and their implications on the electrical properties are discussed in detail. Distinct domain nucleation, growth, and propagation behaviors in nanometer-scale ferroelectric capacitors are discussed and compared to those of micrometer-scale counterparts. The structural effect of ferroelectric nanocapacitors on the domain switching behavior and cross-talk between neighboring capacitors under external electric field is reviewed. PMID:21919083

  6. New modalities of strain-control of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Damodaran, Anoop R.; Agar, Joshua C.; Pandya, Shishir; Chen, Zuhuang; Dedon, Liv; Xu, Ruijuan; Apgar, Brent; Saremi, Sahar; Martin, Lane W.

    2016-07-01

    Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

  7. Chemical solution growth of ferroelectric oxide thin films and nanostructures.

    PubMed

    Bassiri-Gharb, Nazanin; Bastani, Yaser; Bernal, Ashley

    2014-04-01

    Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics. PMID:24121276

  8. Freezing in relaxor ferroelectrics and dipolar glasses

    NASA Astrophysics Data System (ADS)

    Pirc, Raša; Kutnjak, Zdravko

    2015-03-01

    A recently proposed semi-phenomenological model of freezing in relaxor ferroelectrics, based on the concept of polar nanoregions (PNRs) embedded in a polarizable medium, is reviewed. A generalized Landau-type free energy for the medium is discussed, where the medium polarization couples linearly to the PNR polarization. When the fourth-order Landau coefficient is negative (b < 0), the correlation radius rc, which measures the PNR size, depends on the temperature T and the applied field E. As T is lowered or E increased, rc increases and the volume of a cluster of PNRs grows until the percolation limit is reached. This leads to a generalized expression for the Vogel-Fulcher (VF) relaxation time with a field-dependent VF freezing temperature T0(E). The case b > 0, in which the percolation mechanism cannot be realized, is considered to be appropriate for dipolar glasses.

  9. Topological Point Defects in Relaxor Ferroelectrics.

    PubMed

    Nahas, Y; Prokhorenko, S; Kornev, I; Bellaiche, L

    2016-03-25

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics. PMID:27058101

  10. Topological Point Defects in Relaxor Ferroelectrics.

    PubMed

    Nahas, Y; Prokhorenko, S; Kornev, I; Bellaiche, L

    2016-03-25

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  11. Topological Point Defects in Relaxor Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nahas, Y.; Prokhorenko, S.; Kornev, I.; Bellaiche, L.

    2016-03-01

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba (Zr0.5 Ti0.5 )O3 (BZT) and Pb (Sc0.5 Nb0.5 )O3 (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  12. Physical Properties of Ferroelectric Mixed Crystals

    NASA Astrophysics Data System (ADS)

    Kwun, Sook-Il; Noh, Keum Hwan

    2001-04-01

    The recent studies of the KH2PO4 family mixed crystals with long-range ferroelectric (FE) order and short-range glass order have been reviewed. In mixed crystals of KH2PO4 family FE or antiferroelectric (AFE) with intermediate mixing concentration, a competing interaction gives rise to a nonergodic proton glass (PG) similar to magnetic spin glass. To understand the phase diagram, we have investigated the phase near FE boundary and observed a coexistence of FE and PG in Rb1-x(NH4)xH2AsO4 and Rb1-x(NH4)xH2PO4 mixed crystals. The nonergodic behavior of the coexisting PG was investigated by the polarization as well as dielectric constant measurement. The remaining FE polarization and the low freezing temperature were discussed in terms of mean field model of dipole glass systems.

  13. Domain wall conduction in multiaxial ferroelectrics

    SciTech Connect

    Eliseev, E. A.; Morozovska, A. N.; Svechnikov, S. V.; Maksymovych, Petro; Kalinin, Sergei V

    2012-01-01

    The conductance of domain wall structures consisting of either stripes or cylindrical domains in multiaxial ferroelectric-semiconductors is analyzed. The effects of the flexoelectric coupling, domain size, wall tilt, and curvature on charge accumulation are analyzed using the Landau-Ginsburg Devonshire theory for polarization vector combined with the Poisson equation for charge distributions. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and wider cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radii less than 5-10 correlation lengths appeared conducting across the entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.

  14. High-efficient and high-content cytotoxic recording via dynamic and continuous cell-based impedance biosensor technology.

    PubMed

    Hu, Ning; Fang, Jiaru; Zou, Ling; Wan, Hao; Pan, Yuxiang; Su, Kaiqi; Zhang, Xi; Wang, Ping

    2016-10-01

    Cell-based bioassays were effective method to assess the compound toxicity by cell viability, and the traditional label-based methods missed much information of cell growth due to endpoint detection, while the higher throughputs were demanded to obtain dynamic information. Cell-based biosensor methods can dynamically and continuously monitor with cell viability, however, the dynamic information was often ignored or seldom utilized in the toxin and drug assessment. Here, we reported a high-efficient and high-content cytotoxic recording method via dynamic and continuous cell-based impedance biosensor technology. The dynamic cell viability, inhibition ratio and growth rate were derived from the dynamic response curves from the cell-based impedance biosensor. The results showed that the biosensors has the dose-dependent manners to diarrhetic shellfish toxin, okadiac acid based on the analysis of the dynamic cell viability and cell growth status. Moreover, the throughputs of dynamic cytotoxicity were compared between cell-based biosensor methods and label-based endpoint methods. This cell-based impedance biosensor can provide a flexible, cost and label-efficient platform of cell viability assessment in the shellfish toxin screening fields. PMID:27647147

  15. High-efficient and high-content cytotoxic recording via dynamic and continuous cell-based impedance biosensor technology.

    PubMed

    Hu, Ning; Fang, Jiaru; Zou, Ling; Wan, Hao; Pan, Yuxiang; Su, Kaiqi; Zhang, Xi; Wang, Ping

    2016-10-01

    Cell-based bioassays were effective method to assess the compound toxicity by cell viability, and the traditional label-based methods missed much information of cell growth due to endpoint detection, while the higher throughputs were demanded to obtain dynamic information. Cell-based biosensor methods can dynamically and continuously monitor with cell viability, however, the dynamic information was often ignored or seldom utilized in the toxin and drug assessment. Here, we reported a high-efficient and high-content cytotoxic recording method via dynamic and continuous cell-based impedance biosensor technology. The dynamic cell viability, inhibition ratio and growth rate were derived from the dynamic response curves from the cell-based impedance biosensor. The results showed that the biosensors has the dose-dependent manners to diarrhetic shellfish toxin, okadiac acid based on the analysis of the dynamic cell viability and cell growth status. Moreover, the throughputs of dynamic cytotoxicity were compared between cell-based biosensor methods and label-based endpoint methods. This cell-based impedance biosensor can provide a flexible, cost and label-efficient platform of cell viability assessment in the shellfish toxin screening fields.

  16. The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

    NASA Astrophysics Data System (ADS)

    Hsu, Yu-Jen

    Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by

  17. Benefits and Risks of Electronic Medical Record (EMR): An Interpretive Analysis of Healthcare Consumers' Perceptions of an Evolving Health Information Systems Technology

    ERIC Educational Resources Information Center

    Thompson, Chester D.

    2013-01-01

    The purpose of this study is to explore healthcare consumers' perceptions of their Electronic Medical Records (EMRs). Although there have been numerous studies regarding EMRs, there have been minimal, if any, research that explores healthcare consumers' awareness of this technology and the social implications that result. As consumers' health…

  18. Organic-Inorganic Nanocomposites via Placing Monodisperse Ferroelectric Nanocrystals in Direct and Permanent Contact with Ferroelectric Polymers.

    PubMed

    Jiang, Beibei; Pang, Xinchang; Li, Bo; Lin, Zhiqun

    2015-09-16

    Organic-inorganic nanocomposites composed of polymers and nanoparticles offer a vast design space of potential material properties, depending heavily on the properties of these two constituents and their spatial arrangement. The ability to place polymers in direct contact with functional nanoparticles via strong bonding, that is, stable chemical interaction without the dissociation of surface capping polymers, provides a means of preventing nanoparticles from aggregation and increasing their dispersibility in nanocomposites, and promises opportunities to explore new properties and construction of miniaturized devices. However, this is still a challenging issue and has not yet been largely explored. Here, we report an unconventional strategy to create in situ organic-inorganic nanocomposites comprising monodisperse ferroelectric nanoparticles directly and permanently tethered with ferroelectric polymers by capitalizing on rationally designed amphiphilic star-like diblock copolymer as nanoreactors. The diameter of ferroelectric nanoparticles and the chain length of ferroelectric polymers can be precisely tuned. The dielectric and ferroelectric properties of nanocomposites containing different sizes of ferroelectric nanoparticles were scrutinized. Such bottom-up crafting of intimate organic-inorganic nanocomposites offers new levels of tailorability to nanostructured materials and promises new opportunities for achieving exquisite control over the surface chemistry and properties of nanocomposites with engineered functionality for diverse applications in energy conversion and storage, catalysis, electronics, nanotechnology, and biotechnology.

  19. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    NASA Astrophysics Data System (ADS)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  20. High spatial and temporal resolution studies of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Hubert, Charles Rankin, Jr.

    The subject of this thesis is the investigation of the polar structure and dynamics of ferroelectric thin films using newly developed high resolution optical, scanning- force microscopy and time-resolved methods. A technique based on confocal scanning optical microscopy (CSOM) is used to image the ferroelectric polarization of BaxSr1-xTiO 3 (BST) thin films at room temperature with sub-micron spatial resolution. Films of both paraelectric (x = 0.5) and ferroelectric ( x = 0.8) compositions show a coexistence of both paraelectric and ferroelectric phases on the smallest scale resolvable with this technique. These results suggest that non-uniform stress is responsible for the strong inhomogeneous thermal broadening of the ferroelectric phase transition, and that dielectric loss in thin films may be dominated by a relatively small fraction of nanometer-sized regions. Apertureless near-field scanning optical microscopy (ANSOM) is used to map the inhomogeneous ferroelectric polarization in BaxSr 1-xTiO3 thin films. Images of nanometer-scale ferroelectric domains in BaxSr1-xTiO3 thin films are obtained with 30 Å spatial resolution using ANSOM. The images exhibit inhomogeneities in the ferroelectric polarization over the smallest scales that can be observed, and are largely uncorrelated with topographic features. The application of an in-plane static electric field causes domain reorientation and domain-wall motion over distances as small as 40 Å. These results demonstrate the promise of ANSOM for imaging near-atomic-scale polarization fluctuations in ferroelectric materials. Interferometric ANSOM is described in detail, including a practical description of how ANSOM images are acquired. A discussion of the various contrast mechanisms in ANSOM is followed by a prescription for eliminating a certain class of topographic artifacts. For the imaging of polarization in ferroelectric thin films, the linear electro-optic effect provides the central contrast mechanism. High

  1. Experimental Demonstration of Hybrid Improper Ferroelectric in the Layered Ruddlesden-Popper Compounds

    NASA Astrophysics Data System (ADS)

    Oh, Yoon Seok

    2015-03-01

    Geometric ferroelectrics are called as improper ferroelectrics where geometric structural constraints, rather than typical cation-anion paring, induce proper ferroelectric polarization. Hybrid improper ferroelectricity, one kind of geometric ferroelectricity, results from the combination of two or more of non-ferroelectric structural order parameters. In recent, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds. However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. In this talk, we report our experimental results of exploring switchable electric polarization and domain structures in the single crystals of the n = 2 layered Ruddlesden-Popper compounds. In collaboration with Xuan Luo, Laboratory for Pohang Emergent Materials, Postech; Fei-Ting Huang, Department of Physics & Astronomy, Rutgers University; Yazhong Wang, Department of Physics & Astronomy, Rutgers University; and Sang-Wook Cheong, Department of Physics & Astronomy, Rutgers University.

  2. Novel Polymer Ferroelectric Behavior via Crystal Isomorphism and Nanoconfinement Effect

    NASA Astrophysics Data System (ADS)

    Zhu, Lei

    2014-03-01

    Despite comprehensive understanding of novel ferroelectric [i.e., relaxor ferroelectric (RFE) and antiferroelectric (AFE)] behaviors for ceramics, RFE and double hysteresis loop (DHL) behaviors have just emerged for ferroelectric crystalline polymers since the past 15 years. A number of applications such as electrostriction, electric energy storage, and electrocaloric cooling have been realized by utilizing these novel ferroelectric properties. However, the fundamental understanding is still lacking. In this invited talk, we intend to unravel the basic physics behind these novel ferroelectric behaviors via systematic studies of poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)]-based terpolymers and e-beam irradiated copolymers. It is found that both crystal internal structure and crystal-amorphous interaction are important for achieving the RFE and DHL behaviors. For the crystal internal structure effect, friction-free dipole switching and nanodomain formation by pinning the polymer chains are essential, and they can be achieved via the mechanism of crystal repeating unit isomorphism. Physical pinning [e.g., in P(VDF-TrFE)-based terpolymers] induces a reversible RFE <-->FE phase transition and thus the DHL behavior, whereas chemical pinning [e.g., in e-beam irradiated P(VDF-TrFE)] results in the RFE behavior. Finally, the crystal-amorphous interaction (or the nanoconfinement effect) results in a competition between the polarization and depolarization local fields. When the depolarization field becomes stronger than the polarization field, a DHL behavior can also be observed. Obviously, the physics is different from ceramics and can be largely attributed to the long chain nature of semicrystalline ferroelectric polymers. This understanding will help us design new ferroelectric polymers with improved electroactive properties and/or better applications. This work is supported by NSF DMR-0907580.

  3. Dielectric investigation of electrically oriented ferroelectric smectic mixture CS-1013.

    PubMed

    Kundu, S K; Okabe, E; Haase, W; Chaudhuri, B K

    2001-11-01

    From dielectric spectroscopic study, a first-order ferroelectric phase transition has been observed in ferroelectric smectic mixture CS-1013 having the phase sequence Cr-SmC*-SmA-N*-Iso. Frequency (100 Hz-10 MHz) and temperature-dependent dielectric measurements have been performed on an electrically aligned sample (thickness 15+/-1 microm) gold coated on glass plates. In the unidirectionally aligned sample, two dielectric relaxation modes (Goldstone mode and soft mode) have been clearly observed in the ferroelectric SmC* phase while only one relaxation mode (soft mode) is visualized in the paraelectric SmA phase. Low-frequency molecular relaxation was also observed in the smectic phases. The experimental results have also been analyzed at different temperatures and biasing voltages for an understanding of the dynamics of dielectric processes in the ferroelectric phase. Finally, we proposed the "pseudospin" model for understanding the ferroelectric-antiferroelectric transition in liquid crystals. We associate the tilt angle straight theta and the pitch of the helix, respectively, with biaxial (b) and uniaxial (u) anisotropy parameters as fluctuating parameters around their stability limit (corresponding to the crystalline values). Here, the director acts as the pseudospin variable. This gives rise to a transverse Ising type (or anisotropic Heisenberg model under the mean-field approximation). It is then shown that such a model with fluctuations of (b) and (u) would explain the ferroelectric and antiferroelectric phase transitions in such liquid crystals. Using Landau theory and the stability conditions, we have also shown, in brief, the feasibility of different types of phase transitions in the ferroelectric liquid crystal system.

  4. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-10-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  5. Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface.

    PubMed

    Yusuf, M Humed; Nielsen, Bent; Dawber, M; Du, X

    2014-09-10

    The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

  6. Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

    DOEpatents

    Goyal, Amit; Shin, Junsoo

    2015-03-31

    A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

  7. Probing Ferroelectric Domain Engineering in BiFeO3 Thin Films by Second Harmonic Generation.

    PubMed

    Trassin, Morgan; Luca, Gabriele De; Manz, Sebastian; Fiebig, Manfred

    2015-09-01

    An optical probe of the ferroelectric domain distribution and manipulation in BiFeO3 thin films is reported using optical second harmonic generation. A unique relation between the domain distribution and its integral symmetry is established. The ferroelectric signature is even resolved when the film is covered by a top electrode. The effect of voltage-induced ferroelectric switching is imaged.

  8. Structural studies on ferroelectric and ferrodistortive materials

    NASA Astrophysics Data System (ADS)

    Zou, Mingqin

    The structure of the piezoelectric material 0.68PbMg1/3Nb 2/3O3-0.32PbTiO3 have been studied by single crystal, powder x-ray diffraction techniques over the temperature range from 25°C to 200°C. The existence of twinned structures or coexistence of rhombohedral and tetragonal phases has been shown by the peak distortion of Bragg reflections. Superlattice structure was observed for all experimental PMN-PT crystals. Refinement results showed that the 2 x 2 x 2 superlattice resulted from anti-parallel displacement of oxygen in the adjacent conventional perovskite unit cells. No cation displacement in the paraelectric phase and little in the ferroelectric phase were shown by the refinement results. This unique feature associated with the ferroelectric mechanism of the material was explained by comparison with PbMg1/3Nb2/3O3. The crystals were extensively characterized by using powder x-ray diffraction, Laue back-reflection and electron backscatter diffraction (EBSD) techniques. The detailed orientation information such as misorientation of grains, location of grain boundaries and the orientation distribution was obtained from the automatic orientation mapping with the EBSD technique. The uniform orientation was confirmed for crystals with a "cellular-like" structure. A crystal growth model, the two-dimensional layer mechanism, was proposed by orientation analysis. Based on the model, some important comments were made on orientation problems under general growth conditions. The ferrodistortive phase transitions of tertramethylphosphonium tetrabromozincate [P(CH3)4]2ZnBr4 and tertramethylphosphonium tetraiodonzincate [P(CH3)4]2ZnI4 were thoroughly studied by a single crystal x-ray diffraction technique. An order parameter analysis by application of Landau theory showed that the two compounds undergo first-order phase transitions near a tricritical Lifshitz point. Transitions for both compounds appear to be first order, but with the iodo salt the transition is nearly

  9. Dynamic fragmentation of ferroelectric ceramics using the torsional Kolsky bar

    SciTech Connect

    Costin, L S; Grady, D E

    1983-10-01

    This paper studied the dynamic loading and subsequent fragmentation of four different load zirconate titanate (95/5 PZT) ferroelectric ceramics using a torsional Kolsky bar apparatus. Solid cylinders of the four materials were loaded in torsion at shear strain rates in the range 10/sup 2/ to 10/sup 3/s/sup -1/. Using the strain gage recordings of the incident, reflected and transmitted pulses, the energy required to fragment the specimen was determined for each test. In addition, the fragments resulting from each test were collected and analyzed by various technciques to determine their mass and size distributions. Results show some differences in particle distributions between the different batches of material. However, there is a more significant and consistent difference between the dynamic strength (as measured by the maximum shear stress) and the fragment mass distributions of the virgin material and the pressure depoled material, despite the fact that no differences were detected in the energy of fragmentation. Using earlier analytical results which relate the local kinetic energy of a potential fragment to the surface energy required to create that fragment, a relationship between the distribution of fragments from a test and material properties was derived. Results of tests on PZT as well as other materials such as oil shale, graphite, uranium dioxide and glass indicate a good correlation between the fragment distribution parameter, n, and material properties as predicted by the theory. Finally, the results are analyzed to determine the potential effects of internal stresses on the dynamic strength of the material and its fragmentation characteristics.

  10. Ferroelectric surface induced electron doping in a zigzag graphene nanoribbon.

    PubMed

    Belletti, G D; Dalosto, S D; Tinte, S

    2016-11-01

    The interface between a zigzag graphene nanoribbon (zGNR) and the ferroelectric PbTiO3 (0 0 1) surface is studied through first-principles calculations. We investigate how the electric polarization normal to the surface tunes the zGNR electronic and magnetic properties. A ferroelectric single-domain configuration with polarization up and down is considered including explicitly a bottom metallic electrode. Our results show how not only the ferroelectric polarization direction determines the doping in zGNR-the downward polarization induces a p-type doping in a planar zGNR whereas the upward polarization keeps it intrinsic-but also the features of the clean ferroelectric surface, such as the atomic relaxation and the electronic distribution. Interestingly, the surface ferroelectric polarization, besides tuning the carrier type as it does in graphene, also closes the zGNR band gap which can be understood in terms of the weakening of the local magnetic moment of the edge carbon atoms as the polarization increases. The zGNR antiferromagnetic ground state is preserved without breaking the α-β degeneracy. PMID:27603305

  11. Electric control of spin injection into a ferroelectric semiconductor.

    PubMed

    Liu, Xiaohui; Burton, J D; Zhuravlev, M Ye; Tsymbal, Evgeny Y

    2015-01-30

    Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-functional calculations, we explore the effect of ferroelectric polarization of electron-doped BaTiO3 (n-BaTiO3) on the spin-polarized transmission across the SrRuO3/n-BaTiO3(001) interface. Our study reveals that, in this system, the interface transmission is negatively spin polarized and that ferroelectric polarization reversal leads to a change in the transport spin polarization from -65% to -98%. Analytical model calculations demonstrate that this is a general effect for ferromagnetic-metal-ferroelectric-semiconductor systems and, furthermore, that ferroelectric modulation can even reverse the sign of spin polarization. The predicted effect provides a nonvolatile mechanism to electrically control spin injection in semiconductor-based spintronics devices.

  12. Ferroelectric surface induced electron doping in a zigzag graphene nanoribbon.

    PubMed

    Belletti, G D; Dalosto, S D; Tinte, S

    2016-11-01

    The interface between a zigzag graphene nanoribbon (zGNR) and the ferroelectric PbTiO3 (0 0 1) surface is studied through first-principles calculations. We investigate how the electric polarization normal to the surface tunes the zGNR electronic and magnetic properties. A ferroelectric single-domain configuration with polarization up and down is considered including explicitly a bottom metallic electrode. Our results show how not only the ferroelectric polarization direction determines the doping in zGNR-the downward polarization induces a p-type doping in a planar zGNR whereas the upward polarization keeps it intrinsic-but also the features of the clean ferroelectric surface, such as the atomic relaxation and the electronic distribution. Interestingly, the surface ferroelectric polarization, besides tuning the carrier type as it does in graphene, also closes the zGNR band gap which can be understood in terms of the weakening of the local magnetic moment of the edge carbon atoms as the polarization increases. The zGNR antiferromagnetic ground state is preserved without breaking the α-β degeneracy.

  13. Ferroelectric surface induced electron doping in a zigzag graphene nanoribbon

    NASA Astrophysics Data System (ADS)

    Belletti, G. D.; Dalosto, S. D.; Tinte, S.

    2016-11-01

    The interface between a zigzag graphene nanoribbon (zGNR) and the ferroelectric PbTiO3 (0 0 1) surface is studied through first-principles calculations. We investigate how the electric polarization normal to the surface tunes the zGNR electronic and magnetic properties. A ferroelectric single-domain configuration with polarization up and down is considered including explicitly a bottom metallic electrode. Our results show how not only the ferroelectric polarization direction determines the doping in zGNR—the downward polarization induces a p-type doping in a planar zGNR whereas the upward polarization keeps it intrinsic—but also the features of the clean ferroelectric surface, such as the atomic relaxation and the electronic distribution. Interestingly, the surface ferroelectric polarization, besides tuning the carrier type as it does in graphene, also closes the zGNR band gap which can be understood in terms of the weakening of the local magnetic moment of the edge carbon atoms as the polarization increases. The zGNR antiferromagnetic ground state is preserved without breaking the α-β degeneracy.

  14. Deterministic Arbitrary Switching of Polarization in a Ferroelectric Thin Film

    SciTech Connect

    Vasudevan, Rama K; Matsumoto, Yuji; Cheng, Xuan; Imai, Akira; Maruyama, Shingo; Xin, Huolin L.; Okatan, Mahmut B; Jesse, Stephen; Kalinin, Sergei V; Nagarajan, Valanoor

    2014-01-01

    Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for the polarization rotation is an abundance of sub-50nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

  15. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials.

    PubMed

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  16. Performing spectroscopic and specific heat studies of improper ferroelectrics

    NASA Technical Reports Server (NTRS)

    Coleman, L. B.

    1982-01-01

    The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.

  17. Electric control of spin injection into a ferroelectric semiconductor.

    PubMed

    Liu, Xiaohui; Burton, J D; Zhuravlev, M Ye; Tsymbal, Evgeny Y

    2015-01-30

    Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-functional calculations, we explore the effect of ferroelectric polarization of electron-doped BaTiO3 (n-BaTiO3) on the spin-polarized transmission across the SrRuO3/n-BaTiO3(001) interface. Our study reveals that, in this system, the interface transmission is negatively spin polarized and that ferroelectric polarization reversal leads to a change in the transport spin polarization from -65% to -98%. Analytical model calculations demonstrate that this is a general effect for ferromagnetic-metal-ferroelectric-semiconductor systems and, furthermore, that ferroelectric modulation can even reverse the sign of spin polarization. The predicted effect provides a nonvolatile mechanism to electrically control spin injection in semiconductor-based spintronics devices. PMID:25679900

  18. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials

    PubMed Central

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-01-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research. PMID:26424484

  19. Why is the electrocaloric effect so small in ferroelectrics?

    NASA Astrophysics Data System (ADS)

    Guzmán-Verri, G. G.; Littlewood, P. B.

    2016-06-01

    Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  20. Controlling the properties of ferroelectric-nickelate interfaces

    NASA Astrophysics Data System (ADS)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  1. Capacitance-voltage measurement in memory devices using ferroelectric polymer

    NASA Astrophysics Data System (ADS)

    Nguyen, Chien A.; Lee, Pooi See

    2006-01-01

    Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

  2. Study of physical properties of integrated ferroelectric/ferromagnetic heterostructures

    SciTech Connect

    Martinez, R.; Kumar, A.; Palai, R.; Katiyar, R. S.; Scott, J. F.

    2010-06-15

    Superlattices (SLs) with different periodicity of ferromagnetic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} as constitutive layers were fabricated on conducting LaNiO{sub 3} coated (001) oriented MgO substrates using pulsed laser deposition. The crystallinity, ferroelectric, and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300 K and ferroelectric behavior over a range of temperatures between 100 and 300 K. A frequency-dependent change in dielectric constant and tangent loss were observed above the ferromagnetic-paramagnetic temperature. The frequency-dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect of two different phases that are connected alternatively in series. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SLs indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.

  3. Ferroelectricity in one unit-cell period oxide superlattices

    NASA Astrophysics Data System (ADS)

    Noh, T. W.; Lee, J. H.; Lee, H. N.

    2005-03-01

    We present electric properties of one unit-cell period superlattices composed of CaTiO3 (CTO), SrTiO3 (STO), and BaTiO3 (BTO) perovskites, in which the structural symmetry and lattice misfit strain can be systematically varied without changing the chemical valence states. The one unit-cell period CTO/BTO, BTO/STO, and CTO/STO superlattices were grown by high oxygen pressure pulsed laser deposition on atomically flat SrRuO3 conducting oxide grown on STO (001) substrates. CTO/BTO and BTO/STO showed ferroelectricity in room temperature, while CTO/STO showed paraelectric behavior. Such spontaneous electric polarization was an unexpected result, because all TiO6 octahedron was not in the same structural condition with ferroelectric BTO, but was sandwiched by CaO (SrO) and BaO layers in these superlattices. By performing first principle calculations, ferroelectric ground states can be found in the distorted TiO6. Moreover, the ferroelectricity was described as the collective displacement of the titanium-oxygen-titanium ions, which is different from that of bulk ferroelectric material.

  4. Ferroelectric-like hysteresis loop originated from non-ferroelectric effects

    DOE PAGES

    Kim, Bora; Seol, Daehee; Lee, Shinbuhm; Lee, Ho Nyung; Kim, Yunseok

    2016-09-06

    Piezoresponse force microscopy (PFM) has provided advanced nanoscale understanding and analysis of ferroelectric and piezoelectric properties. In PFM-based studies, electromechanical strain induced by the converse piezoelectric effect is probed and analyzed as a PFM response. However, electromechanical strain can also arise from several non-piezoelectric origins that may lead to a misinterpretation of the observed response. Among them, electrostatic interaction can significantly affect the PFM response. Nonetheless, previous studies explored solely the influence of electrostatic interaction on the PFM response under the situation accompanied with polarization switching. Here, we show the influence of the electrostatic interaction in the absence of polarizationmore » switching by using unipolar voltage sweep. The obtained results reveal that the electromechanical neutralization between piezoresponse of polarization and electrostatic interaction plays a crucial role in the observed ferroelectric-like hysteresis loop despite the absence of polarization switching. Furthermore, our work can provide a basic guideline for the correct interpretation of the hysteresis loop in PFM-based studies.« less

  5. Ferroelectric-like hysteresis loop originated from non-ferroelectric effects

    NASA Astrophysics Data System (ADS)

    Kim, Bora; Seol, Daehee; Lee, Shinbuhm; Lee, Ho Nyung; Kim, Yunseok

    2016-09-01

    Piezoresponse force microscopy (PFM) has provided advanced nanoscale understanding and analysis of ferroelectric and piezoelectric properties. In PFM-based studies, electromechanical strain induced by the converse piezoelectric effect is probed and analyzed as a PFM response. However, electromechanical strain can also arise from several non-piezoelectric origins that may lead to a misinterpretation of the observed response. Among them, electrostatic interaction can significantly affect the PFM response. Nonetheless, previous studies explored solely the influence of electrostatic interaction on the PFM response under the situation accompanied with polarization switching. Here, we show the influence of the electrostatic interaction in the absence of polarization switching by using unipolar voltage sweep. The obtained results reveal that the electromechanical neutralization between piezoresponse of polarization and electrostatic interaction plays a crucial role in the observed ferroelectric-like hysteresis loop despite the absence of polarization switching. Thus, our work can provide a basic guideline for the correct interpretation of the hysteresis loop in PFM-based studies.

  6. Phononic Crystal Tunable via Ferroelectric Phase Transition

    NASA Astrophysics Data System (ADS)

    Xu, Chaowei; Cai, Feiyan; Xie, Shuhong; Li, Fei; Sun, Rong; Fu, Xianzhu; Xiong, Rengen; Zhang, Yi; Zheng, Hairong; Li, Jiangyu

    2015-09-01

    Phononic crystals (PCs) consisting of periodic materials with different acoustic properties have potential applications in functional devices. To realize more smart functions, it is desirable to actively control the properties of PCs on demand, ideally within the same fabricated system. Here, we report a tunable PC made of Ba0.7Sr0.3Ti O3 (BST) ceramics, wherein a 20-K temperature change near room temperature results in a 20% frequency shift in the transmission spectra induced by a ferroelectric phase transition. The tunability phenomenon is attributed to the structure-induced resonant excitation of A0 and A1 Lamb modes that exist intrinsically in the uniform BST plate, while these Lamb modes are sensitive to the elastic properties of the plate and can be modulated by temperature in a BST plate around the Curie temperature. The study finds opportunities for creating tunable PCs and enables smart temperature-tuned devices such as the Lamb wave filter or sensor.

  7. Wave-mixing solitons in ferroelectric crystals

    NASA Astrophysics Data System (ADS)

    Bugaychuk, S.; Kovacs, L.; Mandula, G.; Polgar, K.; Rupp, R. A.

    Although the sine-Gordon equation was originally obtained for the description of four-wave mixing in transmission geometry, it describes self-diffraction of the wave from shifted gratings as well. The sine-Gordon equation governs soliton propagation. The photoinduced amplitude of the refractive-index grating exhibits also a soliton shape in the crystal volume. The origin of this effect is the change of the contrast of light due to energy transfer between coupled waves during their propagation, which occurs in bulk crystals with strong photorefractive gain. The theoretical description shows the possibility to control the soliton properties by changing the input intensity ratio and/or input phase difference of the wave. The effect can lead to diffraction efficiency management, auto-oscillations and bistability of the output waves due to wave-mixing in ferroelectrics. Results on the first experimental observation of non-uniform distribution of the grating amplitude profile and its changes versus input intensity ratio are presented.

  8. Photostriction in Ferroelectrics from Density Functional Theory.

    PubMed

    Paillard, Charles; Xu, Bin; Dkhil, Brahim; Geneste, Grégory; Bellaiche, L

    2016-06-17

    An ab initio procedure allowing the computation of the deformation of ferroelectric-based materials under light is presented. This numerical scheme consists in structurally relaxing the system under the constraint of a fixed n_{e} concentration of electrons photoexcited into a specific conduction band edge state from a chosen valence band state, via the use of a constrained density functional theory method. The resulting change in lattice constant along a selected crystallographic direction is then calculated for a reasonable estimate of n_{e}. This method is applied to bulk multiferroic BiFeO_{3} and predicts a photostriction effect of the same order of magnitude than the ones recently observed. A strong dependence of photostrictive response on both the reached conduction state and the crystallographic direction (along which this effect is determined) is also revealed. Furthermore, analysis of the results demonstrates that the photostriction mechanism mostly originates from the screening of the spontaneous polarization by the photoexcited electrons in combination with the inverse piezoelectric effect. PMID:27367406

  9. Lifshitz point in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Rananavare, Shankar B.; Pisipati, V. G.; Wong, E. W.

    1994-04-01

    Ferroelectric liquid crystals (FLCs) find many applications in display devices, waveguide switching and optical computing. These applications exploit the electrically alignable polarization of FLCs in the Smectic C* (SmC*) phase. In the absence of an electrical field, the SmC* phase exhibits helical modulation of the polarization vector resulting in no net bulk polarization. Pitch length and polarization properties of the phase are associated with the tilted structure and chirality of FLCs. Fundamentally, these physical properties constitute secondary order parameters of the SmA-SmC* (AC*) phase transitions. In this paper, we report a unique and startling ACC* multicritical point in mixtures of chiral DOBAMBC (p-(n- decyloxybenzylidene)-p-amino-(2-methyl-butyl) cinnamate and archiral 10O.8 (4- decyloxybenzylidene-4' octylaniline) where the SmA, C, and C* (ACC* point) phases meet. Studies of the phase diagram, tilt angle ((theta) ), polarization (P) and helix pitch (p) reveal an ACC* Lifshitz point that can be described in terms of the extended Landau theory. Specifically, the TAC* and maximum polarization (Pm) exhibit quadratic composition dependence while the helical pitch length (p equals 2(pi) /q) varies linearly. Both q and Pm vanish discontinuously at the C-C* phase boundary revealing its first order nature. Significantly, the composition dependence (x) of Pm and (theta) can be explained using percolation and thermodynamic scaling theories, respectively.

  10. Curie transitions for attograms of ferroelectric polymers.

    PubMed

    Serghei, A; Zhao, W; Miranda, D; Russell, T P

    2013-02-13

    Polymer systems having one, two, or three dimensions on the nanometer length scale can exhibit physical properties different from the bulk. The degree of disorder characteristic for large amounts of matter is strongly reduced and changes in symmetry are imposed by means of geometrical confinement. This could be used to induce-through orientation and order-enhancement in the material properties. Experiments on extremely small amounts of matter, however, are naturally characterized by large fluctuations in the measured signals, especially in the case of polymer objects having three dimensions on the nanometer length scale. This imposes the necessity of repeating the measurements until a statistical distribution is obtained. Here we show that investigations on statistical ensembles of attograms of material (1 ag = 10(-18) g) are possible in a single experiment by employing highly ordered arrays of identical, independent, additive nanocontainers. Phase transitions corresponding to attograms of a ferroelectric polymer are measured by this approach. As compared to one- or two-dimensional confinement, significant changes in the Curie transitions are found.

  11. Technology.

    ERIC Educational Resources Information Center

    Callison, Daniel

    2002-01-01

    Discussion of technology focuses on instructional technology. Topics include inquiry and technology; curriculum development; reflection and curriculum evaluation; criteria for technological innovations that will increase student motivation; standards; impact of new technologies on library media centers; software; and future trends. (LRW)

  12. Polarization control at spin-driven ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Leo, Naëmi; Bergman, Anders; Cano, Andres; Poudel, Narayan; Lorenz, Bernd; Fiebig, Manfred; Meier, Dennis

    2015-04-01

    Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

  13. Polarization control at spin-driven ferroelectric domain walls.

    PubMed

    Leo, Naëmi; Bergman, Anders; Cano, Andres; Poudel, Narayan; Lorenz, Bernd; Fiebig, Manfred; Meier, Dennis

    2015-04-14

    Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

  14. Giant tunneling electroresistance in ferroelectric-gated silicene junction

    NASA Astrophysics Data System (ADS)

    Suwanvarangkoon, Assanai; Soodchomshom, Bumned

    2015-01-01

    The electroresistance in silicene-based normal/ferroelectric-gated/normal junction is investigated. The energy gap in silicene can be tuned by electric field. The spontaneous electric polarization in ferroelectric (FE) can be switched by external electric field. Due to the combination of these properties, we find that the studied junction may generate tunneling electroresistance (TER) exceeding 109%. The conductance ratio of ON to OFF-state, GON/GOFF, is found to be larger than 107, enhanced by increasing the thickness of the barrier or increasing the magnitude of electric polarization in the FE-layer. The giant TER effect is directly related to the buckled lattice and the presence of spin-orbit interaction in silicene. This work reveals the potential of silicene as a good material for application of ferroelectric random-access memory.

  15. Room temperature ferroelectricity in continuous croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

    2016-09-01

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  16. Field-induced vortices in weakly anisotropic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Sené, A.; Baudry, L.; Luk'yanchuk, I.; Lahoche, L.; El Amraoui, Y.

    2011-03-01

    In microscale and nanoscale ferroelectric samples, the formation and growth of domains are the usual stages of the polarization switching mechanism. By assuming weak polarization anisotropy and by solving the Ginzburg-Landau-Khalatnikov equation we have explored an alternative mechanism which consists in ferroelectric switching induced by vortex formation. We have studied the polarization dynamics inside a ferroelectric circular capacitor where switching leads to the formation of a metastable vortex state with a rotational motion of the polarization. Our results are consistent with recent first-principle simulations [I.I. Naumov, H.X. Fu, Phys. Rev. Lett. 98, 077603 (2007)] and with experiments on PbZr 0.2Ti 0.8O 3 [A. Gruverman, D. Wu, H.J. Fan, I. Vrejoiu, M. Alexe, R.J. Harrison, J.F. Scott, J. Phys. Condens. Matter 20 342201(2008)] and demonstrate that vortex-induced polarization switching can be an effective mechanism for circular nanocapacitors.

  17. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    SciTech Connect

    Kumar, Ashok Shukla, A. K.; Barrionuevo, D.; Ortega, N.; Katiyar, Ram S.; Shannigrahi, Santiranjan; Scott, J. F.

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  18. Ultrathin flexible memory devices based on organic ferroelectric transistors

    NASA Astrophysics Data System (ADS)

    Sugano, Ryo; Hirai, Yoshinori; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    Here, we demonstrate ultrathin, flexible nonvolatile memory devices with excellent durability under compressive strain. Ferroelectric-gate field-effect transistors (FeFETs) employing organic semiconductor and polymer ferroelectric layers are fabricated on a 1-µm-thick plastic film substrate. The FeFETs are characterized by measuring their transfer characteristics, programming time, and data retention time. The data retention time is almost unchanged even when a 50% compressive strain is applied to the devices. To clarify the origin of the excellent durability of the devices against compressive strain, an intermediate plane is calculated. From the calculation result, the intermediate plane is placed close to the channel region of the FeFETs. The high flexibility of the ferroelectric polymer and ultrathin device structure contributes to achieving a bending radius of 0.8 µm without the degradation of memory characteristics.

  19. Development of a Ferroelectric Based Tunable DLA Structure

    SciTech Connect

    Kanareykin, A.; Schoessow, P.; Jing, C.; Nenasheva, E.; Power, J. G.; Gai, W.

    2009-01-22

    An experimental demonstration of a tunable Dielectric Loaded Accelerating (DLA)[1] structure is planned using a nonlinear ferroelectric with temperature- or voltage-controllable permittivity. We designed and tested two prototype Ka-band double layer ferroelectric-ceramic structures (cylindrical and planar) consisting of linear ceramic layers (dielectric constant of 6.8) and BST(M) composite ferroelectric layers of 400-800 {mu}m thickness and dielectric constant of 450-550. The frequency shift by temperature variation of the cylindrical Ka-band tunable DLA of 14 MHz/ deg. K has been demonstrated leading to an overall DLA structure frequency tuning range of 140-280 MHz with 10-20 deg. K temperature variation. The Ka band prototype DLA structure demonstrated a 6 MHz frequency tuning range for a dc bias field design at 25 kV/cm field strength.

  20. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    NASA Astrophysics Data System (ADS)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-07-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics.

  1. Piezoelectric properties of rhombohedral ferroelectric materials with phase transition

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaofang; Soh, A. K.

    2015-12-01

    The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau-Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.

  2. Molecular Designs for Enhancement of Polarity in Ferroelectric Soft Materials

    NASA Astrophysics Data System (ADS)

    Ohtani, Ryo; Nakaya, Manabu; Ohmagari, Hitomi; Nakamura, Masaaki; Ohta, Kazuchika; Lindoy, Leonard F.; Hayami, Shinya

    2015-11-01

    The racemic oxovanadium(IV) salmmen complexes, [VO((rac)-(4-X-salmmen))] (X = C12C10C5 (1), C16 (2), and C18 (3); salmmen = N,N‧-monomethylenebis-salicylideneimine) with “banana shaped” molecular structures were synthesized, and their ferroelectric properties were investigated. These complexes exhibit well-defined hysteresis loops in their viscous phases, moreover, 1 also displays liquid crystal behaviour. We observed a synergetic effect influenced by three structural aspects; the methyl substituents on the ethylene backbone, the banana shaped structure and the square pyramidal metal cores all play an important role in generating the observed ferroelectricity, pointing the way to a useful strategy for the creation of advanced ferroelectric soft materials.

  3. Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

    SciTech Connect

    Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

    2011-06-15

    The La{sub 0.75}Sr{sub 0.25}MnO{sub 3} (LSMO)/Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

  4. Active control of magnetoresistance of organic spin valves using ferroelectricity

    PubMed Central

    Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C.; Ward, T. Z.; Gai, Zheng; Zhang, X.-G.; Lee, Ho Nyung; Shen, Jian

    2014-01-01

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

  5. Molecular Designs for Enhancement of Polarity in Ferroelectric Soft Materials

    PubMed Central

    Ohtani, Ryo; Nakaya, Manabu; Ohmagari, Hitomi; Nakamura, Masaaki; Ohta, Kazuchika; Lindoy, Leonard F.; Hayami, Shinya

    2015-01-01

    The racemic oxovanadium(IV) salmmen complexes, [VO((rac)-(4-X-salmmen))] (X = C12C10C5 (1), C16 (2), and C18 (3); salmmen = N,N′-monomethylenebis-salicylideneimine) with “banana shaped” molecular structures were synthesized, and their ferroelectric properties were investigated. These complexes exhibit well-defined hysteresis loops in their viscous phases, moreover, 1 also displays liquid crystal behaviour. We observed a synergetic effect influenced by three structural aspects; the methyl substituents on the ethylene backbone, the banana shaped structure and the square pyramidal metal cores all play an important role in generating the observed ferroelectricity, pointing the way to a useful strategy for the creation of advanced ferroelectric soft materials. PMID:26568045

  6. Engineering relativistic effects in ferroelectric SnTe

    NASA Astrophysics Data System (ADS)

    Plekhanov, E.; Barone, P.; Di Sante, D.; Picozzi, S.

    2014-10-01

    Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a semiconductor featuring topologically nontrivial properties, such as SnTe, merges the intriguing field of spin-orbit-driven physics with nonvolatile functionalities appealing for spintronics. By using a variety of modeling techniques, we show that a strikingly rich sequence of phases can be induced in SnTe, when going from a room-temperature cubic phase to a low-temperature ferroelectric structure, ranging from a topological crystalline insulator to a time-reversal-invariant Z2 topological insulator to a "ferroelectric Rashba semiconductor," exhibiting a huge electrically controllable Rashba effect in the bulk band structure.

  7. Coupled Ultrafast Lattice and Polarization Dynamics in Ferroelectric Nanolayers

    SciTech Connect

    Korff Schmising, C. v.; Bargheer, M.; Kiel, M.; Zhavoronkov, N.; Woerner, M.; Elsaesser, T.; Vrejoiu, I.; Hesse, D.; Alexe, M.

    2007-06-22

    We report the first analysis of the polarization and lattice dynamics in a metal/ferroelectric/metal nanolayer system by femtosecond x-ray diffraction. Two Bragg reflections provide information on the coupled dynamics of the two relevant phonon modes for ferroelectricity in perovskites, the tetragonal distortion and the soft mode. Optical excitation of the SrRuO{sub 3} metal layers generates giant stress (>1 GPa) compressing the PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} layers by up to 2%. The resulting change of tetragonality reaches a maximum after 1.3 ps. As a result, the ferroelectric polarization P is reduced by up to 100% with a slight delay that is due to the anharmonic coupling of the two modes.

  8. Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods

    SciTech Connect

    Fu, Wangyang; Qin, Shengyong; Liu, Lei; Kim, Tae Hwan; Hellstrom, Sondra L; Wang, Wenlong; Liang, Wenjie; Bai, Xuedong; Li, An-Ping; Wang, Enge

    2011-01-01

    Complex nanostructures such as semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we construct a field effect transistor (FET) based on single CdS nanotetrapods with a ferroelectric Ba0.7Sr0.3TiO3 (BST) film as high- , switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods, which reveals a p-type field effect up to room temperature. The conductance modulation in the FET originates from the channel tuning in the arm-core-arm junctions of nanotetrapods, displaying a single-electron transistor effect at low temperature (8.5 K). The ferroelectric gate dielectric enables not only an enhanced capacitance coupling but the non-volatile memory effect as well. A proof-of-principle of ferroelectric FET operation has thus been demonstrated in a nanoscale three-dimensional object and at the single electron level.

  9. Domain morphology from k -space spectroscopy of ferroelectric crystals

    NASA Astrophysics Data System (ADS)

    Voelker, Uwe; Betzler, Klaus

    2006-10-01

    A nonlinear-optical investigation technique for the domain structuring in ferroelectric crystals is reported. Noncollinear optical frequency doubling in a quasiphase-matched scheme allows for conclusions on the k -space representation of the domain morphology or—putting it in other terms—on the k -space representation of the correlation lengths (k-space spectroscopy). As an example, the ferroelectric-to-paraelectric phase transition of the relaxor ferroelectric strontium-barium niobate (SBN) is studied. One important result is that homogeneously poled crystals of SBN do not uniquely go through the phase transition as commonly assumed. Instead, the correlation length shows a characteristic anisotropic behavior in the phase-transition region.

  10. Semiconductor ferroelectric compositions and their use in photovoltaic devices

    DOEpatents

    Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E; Grinberg, Ilya; West, Don Vincent

    2016-11-01

    Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

  11. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    SciTech Connect

    Jay L. Hirshfield

    2011-03-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  12. Development of a Ferroelectric Based Tunable DLA Structure

    NASA Astrophysics Data System (ADS)

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Schoessow, P.; Power, J. G.; Gai, W.

    2009-01-01

    An experimental demonstration of a tunable Dielectric Loaded Accelerating (DLA) [1] structure is planned using a nonlinear ferroelectric with temperature- or voltage-controllable permittivity. We designed and tested two prototype Ka-band double layer ferroelectric-ceramic structures (cylindrical and planar) consisting of linear ceramic layers (dielectric constant of 6.8) and BST(M) composite ferroelectric layers of 400-800 μm thickness and dielectric constant of 450-550. The frequency shift by temperature variation of the cylindrical Ka-band tunable DLA of 14 MHz/° K has been demonstrated leading to an overall DLA structure frequency tuning range of 140-280 MHz with 10-20° K temperature variation. The Ka band prototype DLA structure demonstrated a 6 MHz frequency tuning range for a dc bias field design at 25 kV/cm field strength.

  13. Design of a polarimeter with two ferroelectric liquid crystal panels

    NASA Astrophysics Data System (ADS)

    Peinado, Alba; Lizana, Angel; Campos, Juan

    2013-09-01

    We present a Stokes polarimeter based on two ferroelectric liquid crystal monopixel panels. This architecture presents advantages associated to dynamic polarimeters and also, allows very fast polarization measurements. A ferroelectric liquid crystal panel can be modeled as a waveplate with a constant retardance and, with two possible orientations for its fast axis when a bipolar electrical sign is addressed. We have calibrated the optical features of our ferroelectric liquid crystal panels: retardance and rotation of the optical axis. In addition, we have carried out an optimization of the orientation of these panels in the setup in order to obtain a minimum condition number of our polarimeter and so, minimize the propagation of noise. Afterwards, we have conducted a tolerance analysis of the elements involved in the setup, focusing for a 2% of accuracy in the Stokes vectors measurements. Then, an experimental calibration is carried out and several measurements are taken in order to analyze its performance.

  14. Active control of magnetoresistance of organic spin valves using ferroelectricity.

    PubMed

    Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C; Ward, T Z; Gai, Zheng; Zhang, X-G; Lee, Ho Nyung; Shen, Jian

    2014-01-01

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

  15. Active control of magnetoresistance of organic spin valves using ferroelectricity

    NASA Astrophysics Data System (ADS)

    Shen, Jian

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

  16. Ferroelectric dipole electrets for output power enhancement in electrostatic vibration energy harvesters

    NASA Astrophysics Data System (ADS)

    Asanuma, Haruhiko; Oguchi, Hiroyuki; Hara, Motoaki; Yoshida, Ryo; Kuwano, Hiroki

    2013-10-01

    We propose a ferroelectric dipole electret composed of polarized lead zirconate titanate. Deep insight into the physics behind the parallel plate capacitor theoretically predicts that we can extract large electric field near the surface of the ferroelectric dipole electret by increasing its surface charge density and thickness. Experiment for ferroelectric dipole electret shows good agreement with the theory. The maximum output power density of electrostatic vibration energy harvesters using the ferroelectric dipole electret was 78 μW/cm3, a three-fold increase over a conventional polymer electret. Our results will pave the way for use of ferroelectrics as electrets.

  17. Liquid-crystal-solid interface structure at the antiferroelectric-ferroelectric phase transition.

    PubMed

    Coleman, D; Bardon, S; Radzihovsky, L; Danner, G; Clark, N A

    2002-12-01

    Total internal reflection is used to probe the molecular organization at the surface of a tilted chiral smectic liquid crystal at temperatures in the vicinity of the bulk antiferroelectric-ferroelectric phase transition. Data are interpreted using an exact analytical solution of a real model for ferroelectric order at the surface. In the mixture T3, ferroelectric surface order is expelled with the bulk ferroelectric-antiferroelectric transition. The conditions for ferroelectric order at the surface of an antiferroelectric bulk are presented. PMID:12513307

  18. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    NASA Astrophysics Data System (ADS)

    Riedel, S.; Polakowski, P.; Müller, J.

    2016-09-01

    Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  19. Incorporating 3D-printing technology in the design of head-caps and electrode drives for recording neurons in multiple brain regions

    PubMed Central

    DeLucca, Michael V.; Haufler, Darrell; Paré, Denis

    2015-01-01

    Recent advances in recording and computing hardware have enabled laboratories to record the electrical activity of multiple brain regions simultaneously. Lagging behind these technical advances, however, are the methods needed to rapidly produce microdrives and head-caps that can flexibly accommodate different recording configurations. Indeed, most available designs target single or adjacent brain regions, and, if multiple sites are targeted, specially constructed head-caps are used. Here, we present a novel design style, for both microdrives and head-caps, which takes advantage of three-dimensional printing technology. This design facilitates targeting of multiple brain regions in various configurations. Moreover, the parts are easily fabricated in large quantities, with only minor hand-tooling and finishing required. PMID:25652930

  20. Incorporating 3D-printing technology in the design of head-caps and electrode drives for recording neurons in multiple brain regions.

    PubMed

    Headley, Drew B; DeLucca, Michael V; Haufler, Darrell; Paré, Denis

    2015-04-01

    Recent advances in recording and computing hardware have enabled laboratories to record the electrical activity of multiple brain regions simultaneously. Lagging behind these technical advances, however, are the methods needed to rapidly produce microdrives and head-caps that can flexibly accommodate different recording configurations. Indeed, most available designs target single or adjacent brain regions, and, if multiple sites are targeted, specially constructed head-caps are used. Here, we present a novel design style, for both microdrives and head-caps, which takes advantage of three-dimensional printing technology. This design facilitates targeting of multiple brain regions in various configurations. Moreover, the parts are easily fabricated in large quantities, with only minor hand-tooling and finishing required.

  1. Incorporating 3D-printing technology in the design of head-caps and electrode drives for recording neurons in multiple brain regions.

    PubMed

    Headley, Drew B; DeLucca, Michael V; Haufler, Darrell; Paré, Denis

    2015-04-01

    Recent advances in recording and computing hardware have enabled laboratories to record the electrical activity of multiple brain regions simultaneously. Lagging behind these technical advances, however, are the methods needed to rapidly produce microdrives and head-caps that can flexibly accommodate different recording configurations. Indeed, most available designs target single or adjacent brain regions, and, if multiple sites are targeted, specially constructed head-caps are used. Here, we present a novel design style, for both microdrives and head-caps, which takes advantage of three-dimensional printing technology. This design facilitates targeting of multiple brain regions in various configurations. Moreover, the parts are easily fabricated in large quantities, with only minor hand-tooling and finishing required. PMID:25652930

  2. Integration of Ferroelectrics, Ferromagnets, and Multiferroics with Silicon

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell

    2009-03-01

    In this talk I will describe the epitaxial integration of ferroelectrics, ferromagnets, and materials that are both at the same time, with silicon. Until recently, ``oxide'' could only mean one thing to anyone working in the semiconductor industry---SiO2. But oxides are an exciting class of electronic materials in their own right. Oxides exhibit the full spectrum of electronic, optical, and magnetic behavior including many functionalities not found in conventional semiconductors. Further, such oxides can be combined epitaxially not only with each other, but epitaxially with the workhorse of semiconductor technology, silicon, enabling the unparalleled variety of physical properties of oxides to be exploited in new ways for electronic applications. The specific oxides that my collaborators* and I have integrated epitaxially with silicon include EuO, ZnO, CaTiO3, SrTiO3, BaTiO3, BiFeO3, Pb(Zr,Ti)O3, and PbMg1/3Nb2/3O3-PbTiO3. Highlights from these systems will be presented. * The work reported was performed in collaboration with the groups of Jochen Mannhart (U. Augsburg), Chang-Beom Eom (U. Wisconsin-Madison), Ramamoorthy Ramesh (Berkeley), Jeremy Levy (U. Pittsburgh), David Muller (Cornell), Xiaoqing Pan (U. Michigan), J"urgen Schubert (J"ulich), Long-Qing Chen (Penn State), Susan Trolier-McKinstry (Penn State), Yves Idzerda (Montana State), Peter B"oni (TU M"unchen), Joseph Woicik (NIST), Philip Ryan (Ames), Michael Bedzyk (Northwestern), Yuri Barash (Russian Acad. Sci.), Qing Ma (Intel), and Hao Li (Motorola).

  3. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  4. Dynamic Properties of Dielectric Susceptibility in Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Cui, Lian; Cui, Haiying; Wu, Chunmei; Yang, Guihua; He, Zelong; Wang, Yuling; Che, Jixin

    2016-02-01

    In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

  5. Imaging linear polarimetry using a single ferroelectric liquid crystal modulator.

    PubMed

    Gendre, Luc; Foulonneau, Alban; Bigué, Laurent

    2010-09-01

    In the field of polarimetry, ferroelectric liquid crystal cells are mostly used as bistable polarization rotators suitable to analyze crossed polarizations. This paper shows that, provided such a cell is used at its nominal wavelength and correctly driven, its behavior is close to that of a tunable half-wave plate, and it can be used with much benefit in lightweight imaging polarimetric setups. A partial Stokes polarimeter using a single digital video camera and a single ferroelectric liquid crystal modulator is designed and implemented for linear polarization analysis. Polarization azimuthal angle and degree of linear polarization are available at 150 frames per second with a good accuracy. PMID:20820209

  6. Engineering ferroelectric tunnel junctions through potential profile shaping

    SciTech Connect

    Boyn, S.; Garcia, V. Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A.

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  7. Voltage tunability of thermal conductivity in ferroelectric materials

    DOEpatents

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  8. Ferroelectric switching in epitaxial GeTe films

    SciTech Connect

    Kolobov, A. V. Fons, P.; Tominaga, J.; Kim, D. J.; Gruverman, A.; Giussani, A.; Calarco, R.

    2014-06-01

    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

  9. Ferroelectric tunnel junctions with multi-quantum well structures

    SciTech Connect

    Ma, Zhijun; Zhang, Tianjin; Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  10. Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

    SciTech Connect

    Garten, Lauren M. Trolier-McKinstry, Susan

    2015-03-07

    Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 °C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d{sub 33} piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9 kV m{sup −1}. It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response.

  11. Ferroelectric Smectic Phase Formed by Achiral Straight Core Mesogens

    NASA Astrophysics Data System (ADS)

    Stannarius, Ralf; Li, Jianjun; Weissflog, Wolfgang

    2003-01-01

    We report electro-optic experiments in liquid crystalline freestanding films of achiral hockey stick shaped mesogens with a straight aromatic core. The material forms two smectic mesophases. In the higher temperature phase, a spontaneous polarization exists in the smectic layer plane and the films show polar switching in electric fields. It is the first example of a ferroelectric phase formed by nearly rodlike achiral mesogens. Mirror symmetry of the phase is spontaneously broken. We propose a molecular configuration similar to a synclinic ferroelectric (CSPF) high temperature phase and an anticlinic, probably antiferroelectric (CAPA) low temperature phase.

  12. Ferroelectric smectic phase formed by achiral straight core mesogens.

    PubMed

    Stannarius, Ralf; Li, Jianjun; Weissflog, Wolfgang

    2003-01-17

    We report electro-optic experiments in liquid crystalline freestanding films of achiral hockey stick shaped mesogens with a straight aromatic core. The material forms two smectic mesophases. In the higher temperature phase, a spontaneous polarization exists in the smectic layer plane and the films show polar switching in electric fields. It is the first example of a ferroelectric phase formed by nearly rodlike achiral mesogens. Mirror symmetry of the phase is spontaneously broken. We propose a molecular configuration similar to a synclinic ferroelectric (C(S)P(F)) high temperature phase and an anticlinic, probably antiferroelectric (C(A)P(A)) low temperature phase. PMID:12570555

  13. Some strategies for improving caloric responses with ferroelectrics

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Scott, James F.; Dkhil, Brahim

    2016-06-01

    Many important breakthroughs and significant engineering developments have been achieved during the past two decades in the field of caloric materials. In this review, we address ferroelectrics emerging as ideal materials which permit both giant elastocaloric and/or electrocaloric responses near room temperature. We summarize recent strategies for improving caloric responses using geometrical optimization, maximizing the number of coexisting phases, combining positive and negative caloric responses, introducing extra degree of freedom like mechanical stress/pressure, and multicaloric effect driven by either single stimulus or multiple stimuli. This review highlights the promising perspective of ferroelectrics for developing next-generation solid-state refrigeration.

  14. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.

    PubMed

    Gruverman, A; Wu, D; Lu, H; Wang, Y; Jang, H W; Folkman, C M; Zhuravlev, M Ye; Felker, D; Rzchowski, M; Eom, C-B; Tsymbal, E Y

    2009-10-01

    Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices. PMID:19697939

  15. Optical model of transient light scattering in ferroelectric liquid crystals

    SciTech Connect

    Loiko, V. A. Konkolovich, A. V.; Miskevich, A. A.

    2009-03-15

    A static optical model is developed for the effect of field-induced transient scattering on coherent light transmission through ferroelectric liquid crystals. Scattering processes are described by introducing an optically anisotropic medium containing scatterers (transient domains). The results presented in the paper are obtained for a plane parallel layer of ferroelectric liquid crystals with a planar helicoidal structure under normal illumination with a linearly polarized plane wave. An analysis is presented of the coherent transmittance of the layer in static applied electric fields.

  16. Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics.

    PubMed

    Wang, Xudong; Wang, Peng; Wang, Jianlu; Hu, Weida; Zhou, Xiaohao; Guo, Nan; Huang, Hai; Sun, Shuo; Shen, Hong; Lin, Tie; Tang, Minghua; Liao, Lei; Jiang, Anquan; Sun, Jinglan; Meng, Xiangjian; Chen, Xiaoshuang; Lu, Wei; Chu, Junhao

    2015-11-01

    A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

  17. Full field electron spectromicroscopy applied to ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Barrett, N.; Rault, J. E.; Wang, J. L.; Mathieu, C.; Locatelli, A.; Mentes, T. O.; Niño, M. A.; Fusil, S.; Bibes, M.; Barthélémy, A.; Sando, D.; Ren, W.; Prosandeev, S.; Bellaiche, L.; Vilquin, B.; Petraru, A.; Krug, I. P.; Schneider, C. M.

    2013-05-01

    The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structures of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons, whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical mapping, surface crystallinity, and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented.

  18. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    PubMed

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  19. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  20. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.