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Sample records for ferroelectric recording technology

  1. Ferroelectric Based Technologies for Accelerators

    SciTech Connect

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Kazakov, S.; Tagantsev, A.; Yakovlev, V.

    2009-01-22

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used--its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  2. Uncooled monolithic ferroelectric IRFPA technology

    NASA Astrophysics Data System (ADS)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  3. Advances in monolithic ferroelectric uncooled IRFPA technology

    NASA Astrophysics Data System (ADS)

    Hanson, Charles M.; Beratan, Howard R.; Belcher, James F.; Udayakumar, K. R.; Soch, Kevin L.

    1998-07-01

    The success of uncooled IR imaging at Raytheon has awakened a new view of the potential of thermal imaging. Once relegated to only expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, thermal imaging is now affordable for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are as low as $8000, and swelling production volume will soon drive prices substantially lower. The impetus for further development is performance. The hybrid barium strontium titanate (BST) detectors currently in production have limited potential for improved sensitivity, and their MTF is suppressed at high frequencies. Microbolometer arrays in development at Raytheon have demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers, and arguably more. They are also compatible with numerous fielded and planned system implementations. Like a microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Initial imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  4. High-density ferroelectric recording using a hard disk drive-type data storage system

    NASA Astrophysics Data System (ADS)

    Aoki, Tomonori; Hiranaga, Yoshiomi; Cho, Yasuo

    2016-05-01

    Ferroelectric probe data storage has been proposed as a novel data storage method in which bits are recorded based on the polarization directions of individual domains. These bits are subsequently read by scanning nonlinear dielectric microscopy. The domain walls of typical ferroelectric materials are quite thin: often only several times the lattice constant, which is advantageous for high-density data storage. In this work, high-density read/write (R/W) demonstrations were conducted using a hard disk drive-type test system, and the writing of bit arrays with a recording density of 3.4 Tbit/in.2 was achieved. Additionally, a series of writing and reading operations was successfully demonstrated at a density of 1 Tbit/in.2. Favorable characteristics of ferroelectric recording media for use with the proposed method are discussed in the latter part of this paper.

  5. Optical and electrical Barkhausen noise induced by recording ferroelectric domain holograms

    NASA Astrophysics Data System (ADS)

    Kewitsch, Anthony S.; Saito, Akira; Yariv, Amnon; Segev, Mordechai; Neurgaonkar, Ratnakar R.

    1995-08-01

    Ferroelectric domain gratings with periods of the order of an optical wavelength are induced in strontium barium niobate by photorefractive space-charge fields. We measure the Barkhausen noise in current and diffraction efficiency while optically recording domain gratings and show that the two are strongly correlated in time. Significant random depolarization occurs under high-intensity illumination. We deduce the kinetics of the domain inversion process from the shape of the current transients.

  6. Recording vocalizations with Bluetooth technology.

    PubMed

    Gaona-González, Andrés; Santillán-Doherty, Ana María; Arenas-Rosas, Rita Virginia; Muñoz-Delgado, Jairo; Aguillón-Pantaleón, Miguel Angel; Ordoñez-Gómez, José Domingo; Márquez-Arias, Alejandra

    2011-06-01

    We propose a method for capturing vocalizations that is designed to avoid some of the limiting factors found in traditional bioacoustical methods, such as the impossibility of obtaining continuous long-term registers or analyzing amplitude due to the continuous change of distance between the subject and the position of the recording system. Using Bluetooth technology, vocalizations are captured and transmitted wirelessly into a receiving system without affecting the quality of the signal. The recordings of the proposed system were compared to those obtained as a reference, which were based on the coding of the signal with the so-called pulse-code modulation technique in WAV audio format without any compressing process. The evaluation showed p < .05 for the measured quantitative and qualitative parameters. We also describe how the transmitting system is encapsulated and fixed on the animal and a way to video record a spider monkey's behavior simultaneously with the audio recordings.

  7. Photonic quantum technologies (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    O'Brien, Jeremy L.

    2015-09-01

    The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

  8. Ultra-high density recording technologies

    NASA Technical Reports Server (NTRS)

    Kryder, Mark H.

    1993-01-01

    The Engineering Research Center in Data Storage Systems at Carnegie Mellon University in cooperation with the National Storage Industry Consortium has selected goals of achieving 10 Gbit/sq in. recording density in magnetic and magneto-optic disk recording and 1 terabyte/cubic in. magnetic tape recording technologies. This talk describes the approaches being taken and the status of research leading to these goals.

  9. Neural recording and modulation technologies

    NASA Astrophysics Data System (ADS)

    Chen, Ritchie; Canales, Andres; Anikeeva, Polina

    2017-01-01

    In the mammalian nervous system, billions of neurons connected by quadrillions of synapses exchange electrical, chemical and mechanical signals. Disruptions to this network manifest as neurological or psychiatric conditions. Despite decades of neuroscience research, our ability to treat or even to understand these conditions is limited by the capability of tools to probe the signalling complexity of the nervous system. Although orders of magnitude smaller and computationally faster than neurons, conventional substrate-bound electronics do not recapitulate the chemical and mechanical properties of neural tissue. This mismatch results in a foreign-body response and the encapsulation of devices by glial scars, suggesting that the design of an interface between the nervous system and a synthetic sensor requires additional materials innovation. Advances in genetic tools for manipulating neural activity have fuelled the demand for devices that are capable of simultaneously recording and controlling individual neurons at unprecedented scales. Recently, flexible organic electronics and bio- and nanomaterials have been developed for multifunctional and minimally invasive probes for long-term interaction with the nervous system. In this Review, we discuss the design lessons from the quarter-century-old field of neural engineering, highlight recent materials-driven progress in neural probes and look at emergent directions inspired by the principles of neural transduction.

  10. Ferroelectric Pump

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    2000-01-01

    A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

  11. Memory Technologies and Data Recorder Design

    NASA Technical Reports Server (NTRS)

    Strauss, Karl F

    2009-01-01

    Missions, both near Earth and deep space, are under consideration that will require data recorder capacities of such magnitude as to be unthinkable just a few years ago. Concepts requiring well over 16,000 GB of storage are being studied. To achieve this capacity via "normal means" was considered incredible as recently as 2004. This paper is presented in two parts. Part I describes the analysis of data recorder capacities for missions as far back as 35 years and provides a projection of data capacities required 20 years from now based upon missions either nearing launch, or in the planning stage. The paper presents a similar projection of memory device capacities as baselined in the ITRS - the International Technology Roadmap for Semiconductors. Using known Total Ionizing Dose tolerance going back as far as a decade, a projection of total dose tolerance is made for two prime technologies out to the year 2028.

  12. Supramolecular ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tayi, Alok S.; Kaeser, Adrien; Matsumoto, Michio; Aida, Takuzo; Stupp, Samuel I.

    2015-04-01

    Supramolecular chemistry uses non-covalent interactions to coax molecules into forming ordered assemblies. The construction of ordered materials with these reversible bonds has led to dramatic innovations in organic electronics, polymer science and biomaterials. Here, we review how supramolecular strategies can advance the burgeoning field of organic ferroelectricity. Ferroelectrics -- materials with a spontaneous and electrically reversible polarization -- are touted for use in non-volatile computer memories, sensors and optics. Historically, this physical phenomenon has been studied in inorganic materials, although some organic examples are known and strong interest exists to extend the search for ferroelectric molecular systems. Other undiscovered applications outside this regime could also emerge. We describe the key features necessary for molecular and supramolecular dipoles in organic ferroelectrics and their incorporation into ordered systems, such as porous frameworks and liquid crystals. The goal of this Review is to motivate the development of innovative supramolecular ferroelectrics that exceed the performance and usefulness of known systems.

  13. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  14. Technology Acceptance of Electronic Medical Records by Nurses

    ERIC Educational Resources Information Center

    Stocker, Gary

    2010-01-01

    The purpose of this study was to evaluate the Technology Acceptance Model's (TAM) relevance of the intention of nurses to use electronic medical records in acute health care settings. The basic technology acceptance research of Davis (1989) was applied to the specific technology tool of electronic medical records (EMR) in a specific setting…

  15. Student Record Automating Using Desktop Computer Technologies.

    ERIC Educational Resources Information Center

    Almerico, Gina M.; Baker, Russell K.; Matassini, Norma

    Teacher education programs nationwide are required by state and federal governments to maintain comprehensive student records of all current and graduated students in their programs. A private, mid-sized university established a faculty team to analyze record-keeping procedures to comply with these government requirements. The team's mandate was…

  16. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 3 2014-10-01 2014-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  17. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 3 2012-10-01 2012-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  18. 42 CFR 425.506 - Electronic health records technology.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 3 2013-10-01 2013-10-01 false Electronic health records technology. 425.506 Section 425.506 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN... Standards and Reporting § 425.506 Electronic health records technology. (a) ACOs, ACO participants, and...

  19. Laser thermographic technologies for hard copy recording

    NASA Astrophysics Data System (ADS)

    Bessmel'tsev, Viktor P.; Baev, Sergej G.

    1995-04-01

    Methods of hard copies recording based on thermal interaction of the beam from CO2 or YAG lasers with various kinds of films on any substrates have been developed. The recording processes are single-step and require no additional development. Among them are: (1) Laser thermodestruction of thin mask layers or of a material surface on any kinds of substrates. (2) Laser thermochemical reactions of thermal decomposition of metal salts in solid state phase on a surface of various hygroscopic substrates. The laser recording devices using the methods, described above have been developed and are manufactured now; they allow one to record hard copies with a size of up to 27 X 31 inches, a resolution of 4000 dpi.

  20. The United States Department of Energy Office of Industrial Technology`s Technology Benefits Recording System

    SciTech Connect

    Hughes, K.R.; Moore, N.L.

    1994-09-01

    The U.S. Department of Energy (DOE) Office of Industrial Technology`s (OIT`s) Technology Benefits Recording System (TBRS) was developed by Pacific Northwest Laboratory (PNL). The TBRS is used to organize and maintain records of the benefits accrued from the use of technologies developed with the assistance of OIT. OIT has had a sustained emphasis on technology deployment. While individual program managers have specific technology deployment goals for each of their ongoing programs, the Office has also established a separate Technology Deployment Division whose mission is to assist program managers and research and development partners commercialize technologies. As part of this effort, the Technology Deployment Division developed an energy-tracking task which has been performed by PNL since 1977. The goal of the energy-tracking task is to accurately assess the energy savings impact of OIT-developed technologies. In previous years, information on OIT-sponsored technologies existed in a variety of forms--first as a hardcopy, then electronically in several spreadsheet formats that existed in multiple software programs. The TBRS was created in 1993 for OIT and was based on information collected in all previous years from numerous industrial contacts, vendors, and plants that have installed OIT-sponsored technologies. The TBRS contains information on technologies commercialized between 1977 and the present, as well as information on emerging technologies in the late development/early commercialization stage of the technology life cycle. For each technology, details on the number of units sold and the energy saved are available on a year-by-year basis. Information regarding environmental benefits, productivity and competitiveness benefits, or impact that the technology may have had on employment is also available.

  1. Integrating Records Management (RM) and Information Technology (IT)

    SciTech Connect

    NUSBAUM,ANNA W.; CUSIMANO,LINDA J.

    2000-03-02

    Records Managers are continually exploring ways to integrate their services with those offered by Information Technology-related professions to capitalize on the advantages of providing customers a total solution to managing their records and information. In this day and age, where technology abounds, there often exists a fear on the part of records management that this integration will result in a loss of identity and the focus of one's own mission - a fear that records management may become subordinated to the fast-paced technology fields. They need to remember there is strength in numbers and it benefits RM, IT, and the customer when they can bring together the unique offerings each possess to reach synergy for the benefit of all the corporations. Records Managers, need to continually strive to move ''outside the records management box'', network, expand their knowledge, and influence the IT disciplines to incorporate the concept of ''management'' into their customer solutions.

  2. Strong anisotropy of ferroelectricity in lead-free bismuth silicate

    NASA Astrophysics Data System (ADS)

    Seol, Daehee; Taniguchi, Hiroki; Hwang, Jae-Yeol; Itoh, Mitsuru; Shin, Hyunjung; Kim, Sung Wng; Kim, Yunseok

    2015-07-01

    Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies.Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03161c

  3. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... protect records against technological obsolescence? 1236.14 Section 1236.14 Parks, Forests, and Public Property NATIONAL ARCHIVES AND RECORDS ADMINISTRATION RECORDS MANAGEMENT ELECTRONIC RECORDS MANAGEMENT Records Management and Preservation Considerations for Designing and Implementing Electronic...

  4. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  5. Review of past, present, and future of recording technology

    NASA Astrophysics Data System (ADS)

    Al-Jibouri, Abdul-Rahman

    2003-03-01

    The revolution of information storage and recording has been advanced significantly over the past two decades. Since the development of computers in early 1950s by IBM, the data (information) was stored on magnetic disc by inducing magnetic flux to define the pit direction. The first disc was developed by IBM with diameter of 25inch to store around 10 kByte. After four decades, the disc drive has become more advanced by reducing the drive size, increasing ariel density and cost reduction. The introduction of new computer operating systems and the Internet resulted in the need to develop high ariel density in the 1990s. Therefore, the disc drive manufacturers were pushed harder to develop new technologies at low cost to survive the competitive market. The disc drives, which are based on media (where the data/information is stored) and the head (which will write and read data/information). The head and disc are separated and with the current technology the spacing between the disc and head is about 40nm. A new technology based on magnetic recording was developed to serve the audio market. This technology is called magnetic type, it is similar to the disc drive, but the media is based on tape rather than rigid disc. Another difference being the head and media are in direct contact. Magnetic tape was developed for audio application and a few years later this technology was extended to allow and accept another technology, called video. This allows consumers to record and view movies in their home. The magnetic tape also used the computer industries for back up data. Magnetic tape is still used in computers and has advanced further over the past decade, companies like Quantum Corp has developed digital linear tape.

  6. 47 CFR 73.9008 - Interim approval of authorized digital output protection technologies and authorized recording...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... information: (1) A general description of how the digital output protection technology or recording method... digital output protection technology or recording method affords content; (3) Information regarding... information to evaluate the appropriateness of the underlying digital output protection technology...

  7. Ferroelectric symmetry-protected multibit memory cell

    PubMed Central

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-01-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing. PMID:28176866

  8. Ferroelectric symmetry-protected multibit memory cell

    NASA Astrophysics Data System (ADS)

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-02-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

  9. Ferroelectric Graphene-Perovskite Interfaces.

    PubMed

    Volonakis, George; Giustino, Feliciano

    2015-07-02

    Owing to their record-breaking energy conversion efficiencies, hybrid organometallic perovskites have emerged as the most promising light absorbers and ambipolar carrier transporters for solution-processable solar cells. Simultaneously, due to its exceptional electron mobility, graphene represents a prominent candidate for replacing transparent conducting oxides. Thus, it is possible that combining these wonder materials may propel the efficiency toward the Schokley-Queisser limit. Here, using first-principles calculations on graphene-CH3NH3PbI3 interfaces, we find that graphene suppresses the octahedral tilt in the very first perovskite monolayer, leading to a nanoscale ferroelectric distortion with a permanent polarization of 3 mC/m(2). This interfacial ferroelectricity drives electron extraction from the perovskite and hinders electron-hole recombination by keeping the electrons and holes separated. The interfacial ferroelectricity identified here simply results from the interplay between graphene's planar structure and CH3NH3PbI3's octahedral connectivity; therefore, this mechanism may be effective in a much broader class of perovskites, with potential applications in photovoltaics and photocatalysis.

  10. Ferroelectric liquid crystal display

    NASA Technical Reports Server (NTRS)

    York, Paul K. (Inventor)

    1977-01-01

    A ferroelectric liquid crystal display device employs capacitance spoiling layers to minimize unneeded capacitances created by crossovers of X and Y address lines and to accurately define desired capacitances. The spoiler layers comprise low dielectric constant layers which space electrodes from the ferroelectric at crossover points where capacitance is not needed for device operation.

  11. Wireless ferroelectric resonating sensor.

    PubMed

    Viikari, Ville; Seppa, Heikki; Mattila, Tomi; Alastalo, Ari

    2010-04-01

    This paper presents a passive wireless resonating sensor that is based on a ferroelectric varactor. The sensor replies with its data at an intermodulation frequency when a reader device illuminates it at 2 closely located frequencies. The paper derives a theoretical equation for the response of such a sensor, verifies the theory by simulations, and demonstrates a temperature sensor based on a ferroelectric varactor.

  12. Flexible ferroelectric organic crystals

    PubMed Central

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-01-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity—the properties that originate from their non-centrosymmetric crystal lattice—but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals. PMID:27734829

  13. Flexible ferroelectric organic crystals

    NASA Astrophysics Data System (ADS)

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity--the properties that originate from their non-centrosymmetric crystal lattice--but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  14. Novel Low Cost High Efficiency Tunable RF Devices and Antenna Arrays Design based on the Ferroelectric Materials and the CTS Technologies

    DTIC Science & Technology

    2011-02-14

    Microwave Theory and Techniques,”vol. 55, pp. 402-409, 2007 W. Kim and M. Iskander, "Integrated Phased Array Antenna Design Using Ferroelectric...on Microwaves , Communications, Antennas and Electronic Systems (IEEE COMCAS’09), Tel Aviv, Israel, Nov. 9-11, 2009. W. C. Kim, and m. F. Iskander, “A...Transactions on Microwave Theory and Techniques,”vol. 55, pp. 402-409, (2007) B. "Integrated Phased Array Antenna Design Using Ferroelectric

  15. Ferroelectric switching of elastin

    PubMed Central

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  16. Magnetic Recording Media Technology for the Tb/in2 Era"

    ScienceCinema

    Bertero, Gerardo [Western Digital

    2016-07-12

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  17. Magnetic Recording Media Technology for the Tb/In2 Era

    SciTech Connect

    Bertero, Gerardo

    2010-04-07

    Magnetic recording has been the technology of choice of massive storage of information. The hard-disk drive industry has recently undergone a major technological transition from longitudinal magnetic recording (LMR) to perpendicular magnetic recording (PMR). However, convention perpendicular recording can only support a few new product generations before facing insurmountable physical limits. In order to support sustained recording areal density growth, new technological paradigms, such as energy-assisted recording and bit-patterined media recording are being contemplated and planned. In this talk, we will briefly discuss the LMR-to-PMR transition, the extendibility of current PMR recording, and the nature and merits of new enabling technologies. We will also discuss a technology roadmap toward recording densities approaching 10 Tv/in2, approximately 40 times higher than in current disk drives.

  18. Ultrafast Polarization Switching in a Biaxial Molecular Ferroelectric Thin Film: [Hdabco]ClO4.

    PubMed

    Tang, Yuan-Yuan; Zhang, Wan-Ying; Li, Peng-Fei; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-12-07

    Molecular ferroelectrics are attracting much attention as valuable complements to conventional ceramic ferroelectrics owing to their solution processability and nontoxicity. Encouragingly, the recent discovery of a multiaxial molecular ferroelectric, tetraethylammonium perchlorate, is expected to be able to solve the problem that in the technologically relevant thin-film form uniaxial molecular ferroelectrics have been found to perform considerably more poorly than in bulk. However, it can show good polarization-electric field (P-E) hysteresis loops only at very low frequency, severely hampering practical applications such as ferroelectric random access memory. Here, we present a biaxial molecular ferroelectric thin film of [Hdabco]ClO4 (dabco = 1,4-diazabicyclo[2.2.2]octane) (1), where a perfect ferroelectric hysteresis loop can be observed even at 10 kHz. It is the first example of a molecular ferroelectric thin film whose polarization can be switched at such a high frequency. Moreover, using piezoresponse force microscopy, we clearly observed the coexistence of 180° and non-180° ferroelectric domains and provided direct experimental proof that 180° ferroelectric switching and non-180° ferroelastic switching are both realized; that is, a flexible alteration of the polarization axis direction can occur in the thin film by applying an electric field. These results open a new avenue for applications of molecular ferroelectrics and will inspire further exploration of high-performance multiaxial molecular ferroelectric thin films.

  19. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-07

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  20. Super Stable Ferroelectrics with High Curie Point

    PubMed Central

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  1. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  2. Ferroelectric Properties of CaBi4Ti4O15 Thin Films on Ito/glass Substrates Prepared by Sol-Gel Technology

    NASA Astrophysics Data System (ADS)

    Cheng, Chien-Min; Kuan, Ming-Chang; Chen, Kai-Hunag; Tsai, Jen-Hwan

    In this study, ferroelectric CaBi4Ti4O15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p-E curves, the 2Pr value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV-vis) spectrum were also investigated and discussed.

  3. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... electronic records whenever the records must be maintained and used beyond the life of the information system... Records Management and Preservation Considerations for Designing and Implementing Electronic Information Systems § 1236.14 What must agencies do to protect records against technological obsolescence?...

  4. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... electronic records whenever the records must be maintained and used beyond the life of the information system... Records Management and Preservation Considerations for Designing and Implementing Electronic Information Systems § 1236.14 What must agencies do to protect records against technological obsolescence?...

  5. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... electronic records whenever the records must be maintained and used beyond the life of the information system... Records Management and Preservation Considerations for Designing and Implementing Electronic Information Systems § 1236.14 What must agencies do to protect records against technological obsolescence?...

  6. Losses in Ferroelectric Materials.

    PubMed

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  7. Losses in Ferroelectric Materials

    PubMed Central

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  8. Linear scanning array with bulk ferroelectric-integrated feed network.

    PubMed

    Teo, Peng-Thian; Jose, Kollakompil A; Wang, Ya-Jun; Lee, Ching-Kwang; Varadan, Vijay K

    2002-05-01

    Variable ferroelectric delay line technology has been utilized to implement a proof-of-concept, continuous scanning, ferroelectric integrated phased array antenna system. S21 phase shifts of up to 157 degrees have been achieved from the phase shifter itself via analogous variation of a DC bias. When integrated into a phased array, beam scanning of at least +/-12 degrees is achieved prior to any optimization. Some of the key material requirements, fabrication procedures, characterization, and assembly of the ferroelectric material will be revealed. The design, integration, and performance of the array system using such phased shifters will be presented.

  9. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  10. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  11. Technologies for Text: Storage and Retrieval of Linguistic Records.

    ERIC Educational Resources Information Center

    Friedman, Edward A.

    This learning module, one in a series developed in a project on "Technology and the Liberal Arts," is an introduction to emerging technological developments for information storage. A historical sketch is provided of text technologies leading up to widespread use of the typewriter toward the end of the 19th century. This is followed by an analysis…

  12. Ferroelectrics based absorbing layers

    NASA Astrophysics Data System (ADS)

    Hao, Jianping; Sadaune, Véronique; Burgnies, Ludovic; Lippens, Didier

    2014-07-01

    We show that ferroelectrics-based periodic structure made of BaSrTiO3 (BST) cubes, arrayed onto a metal plate with a thin dielectric spacer film exhibit a dramatic enhancement of absorbance with value close to unity. The enhancement is found around the Mie magnetic resonance of the Ferroelectrics cubes with the backside metal layer stopping any transmitted waves. It also involves quasi-perfect impedance matching resulting in reflection suppression via simultaneous magnetic and electrical activities. In addition, it was shown numerically the existence of a periodicity optimum, which is explained from surface waves analysis along with trade-off between the resonance damping and the intrinsic loss of ferroelectrics cubes. An experimental verification in a hollow waveguide configuration with a good comparison with full-wave numerical modelling is at last reported by measuring the scattering parameters of single and dual BST cubes schemes pointing out coupling effects for densely packed structures.

  13. Applications of modern ferroelectrics.

    PubMed

    Scott, J F

    2007-02-16

    Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.

  14. Health information technology and electronic health records in neurologic practice.

    PubMed

    Esper, Gregory J; Drogan, Oksana; Henderson, William S; Becker, Amanda; Avitzur, Orly; Hier, Daniel B

    2010-05-01

    The tipping point for electronic health records (EHR) has been reached and universal adoption in the United States is now inevitable. Neurologists will want to choose their electronic health record prudently. Careful selection, contracting, planning, and training are essential to successful implementation. Neurologists need to examine their workflow carefully and make adjustments to ensure that efficiency is increased. Neurologists will want to achieve a significant return on investment and qualify for all applicable financial incentives from payers, including CMS. EHRs are not just record-keeping tools but play an important role in quality improvement, evidence-based medicine, pay for performance, patient education, bio-surveillance, data warehousing, and data exchange.

  15. Towards multicaloric effect with ferroelectrics

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Zhang, Guangzu; Li, Qi; Bellaiche, Laurent; Scott, James F.; Dkhil, Brahim; Wang, Qing

    2016-12-01

    Utilizing thermal changes in solid-state materials strategically offers caloric-based alternatives to replace current vapor-compression technology. To make full use of multiple forms of the entropy and achieve higher efficiency for designs of cooling devices, the multicaloric effect appears as a cutting-edge concept encouraging researchers to search for multicaloric materials with outstanding caloric properties. Here we report the multicaloric effect in BaTi O3 single crystals driven simultaneously by mechanical and electric fields and described via a thermodynamic phenomenological model. It is found that the multicaloric behavior is mainly dominated by the mechanical field rather than the electric field, since the paraelectric-to-ferroelectric transition is more sensitive to mechanical field than to electric field. The use of uniaxial stress competes favorably with pressure due to its much higher caloric strength and negligible elastic thermal change. It is revealed that multicaloric response can be significantly larger than just the sum of mechanocaloric and electrocaloric effects in temperature regions far above the Curie temperature but cannot exceed this limit near the Curie temperature. Our results also show the advantage of the multicaloric effect over the mechanically mediated electrocaloric effect or electrically mediated mechanocaloric effect. Our findings therefore highlight the importance of ferroelectric materials to develop multicaloric cooling.

  16. 75 FR 1446 - Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... ADMINISTRATION Rate of Payment for Medical Records Received Through Health Information Technology (IT) Necessary... national rate of Federal payment for medical records received through health IT. SUMMARY: We have set $15... records through health IT in response to a request. We will pay the uniform national rate to a...

  17. Design of a Multi-Level/Analog Ferroelectric Memory Device

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2006-01-01

    Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  18. Domains in Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Gregg, Marty

    2010-03-01

    Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device

  19. Promoting Independence through Assistive Technology: Evaluating Audio Recorders to Support Grocery Shopping

    ERIC Educational Resources Information Center

    Bouck, Emily C.; Satsangi, Rajiv; Bartlett, Whitney; Weng, Pei-Lin

    2012-01-01

    In light of a positive research base regarding technology-based self-operating prompting systems (e.g., iPods), yet a concern about the sustainability of such technologies after a research project is completed, this study sought to explore the effectiveness and efficiency of an audio recorder, a low-cost, more commonly accessible technology to…

  20. Isotopic, Ecological and Technological Investigations of the Land Snail Record

    ERIC Educational Resources Information Center

    Faber, Meredith L.

    2012-01-01

    In the ever-evolving landscape of the natural world, change is the only constant. Investigating how life accommodates that change can provide valuable insights into the biological, ecological and geological history of our planet. The fossil record is replete with examples of organisms which failed to survive in the wake of ongoing environmental…

  1. Digital Recording Technology in the Writing Classroom: Sampling as Citing

    ERIC Educational Resources Information Center

    Duffy, W. Keith

    2004-01-01

    For the last few years, the author has been implementing a pedagogy that infuses musical composition--specifically the recording of electronic music--into his first-year composition courses. The author and his students have been quite surprised by the theoretical and practical connections that exist between the production of popular electronic…

  2. Measuring the evolution of the drivers of technological innovation in the patent record.

    PubMed

    Buchanan, Andrew; Packard, Norman H; Bedau, Mark A

    2011-01-01

    We argue that technology changes over time by an evolutionary process that is similar in important respects to biological evolution. The process is adaptive in the sense that technologies are selected because of their specific adaptive value and not at random, but this adaptive evolutionary process differs from the Darwinian process of random variation followed by natural selection. We find evidence for the adaptive evolution of technology in the US patent record, specifically, the public bibliographic information of all utility patents issued in the United States from 1976 through 2010. Patents record certain innovations in the evolution of technology. The 1976-2010 patent record is huge, containing almost four million patents. We use a patent's incoming citations to measure its impact on subsequent patented innovations. Weighting innovative impact by the dissimilarity between parent and child technologies reveals that many of the most fecund inventions are door-opening technologies that spawn innovations in widely diverse categories.

  3. Molecular ferroelectrics: where electronics meet biology

    PubMed Central

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-01-01

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by overview on the fundamentals of ferroelectricity. Latest development in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also noted. PMID:24018952

  4. Molecular ferroelectrics: where electronics meet biology.

    PubMed

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  5. Shallow Water UXO Technology Demonstration Site Scoring Record No. 7

    DTIC Science & Technology

    2007-05-01

    to eat lunch and charge the battery – using the truck instead of the trickle charger . Downtime equipment 85 1425 1450 Surveying. Collecting data...sensor array designed by 3DGeophysics. Testing was conducted at ATC, Standardized Shallow Water UXO Technology Demonstration Site. A description of...available on the capabilities of shallow water detection systems when these criteria were developed. However, they were used in the design of the test

  6. Students' Satisfaction and Valuation of Web-Based Lecture Recording Technologies

    ERIC Educational Resources Information Center

    Taplin, Ross H.; Low, Lee Hun; Brown, Alistair M.

    2011-01-01

    This paper explores students' satisfaction and valuation of web-based lecture recording technologies (WBLT) that enable students to download recordings of lectures they could not attend or wish to review for revision purposes. The study was undertaken among undergraduates and postgraduates in accounting at an Australian university. In addition to…

  7. Using Micrographics Technology to Preserve and Make Accessible Records of Permanent Value.

    ERIC Educational Resources Information Center

    Mayfield, David M.

    1985-01-01

    Describes experiences of Genealogical Library of Church of Jesus Christ of Latter-day Saints in using micrographics technology to preserve records of permanent value from throughout the world. Highlights include selecting and filming records processing and sorting film, cataloging and using microforms, and what the future holds. Three sources are…

  8. Aviation Maintenance Technology. General. G103 Fundamentals of Regulations, Publications, and Records. Instructor Material.

    ERIC Educational Resources Information Center

    Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

    These instructor materials for an aviation maintenance technology course contain three instructional modules. The modules cover the following topics: selecting and using regulations, publications, and records; documenting aircraft records; and exercising mechanic's privileges and limitations. Each module contains some or all of these nine basic…

  9. Super-crystals in composite ferroelectrics

    PubMed Central

    Pierangeli, D.; Ferraro, M.; Di Mei, F.; Di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; DelRe, E.

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies. PMID:26907725

  10. Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

    NASA Astrophysics Data System (ADS)

    Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

    2016-12-01

    With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

  11. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    SciTech Connect

    Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam; Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka

    2014-09-15

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

  12. Healthtrak(tm): Technology Enhanced Human Interface to the Computerized Patient Record

    DTIC Science & Technology

    2002-07-01

    Jan 2003 THIS PAGE IS UNCLASSIFIED AD Award Number: DAMD17-02-C-0032 TITLE: HealthTrakM : Technology Enhanced Human Interface to the Computerized...Patient Record PRINCIPAL INVESTIGATOR: Azad M. Madni, Ph.D. Doctor Weiwen Lin Carla C. Madni CONTRACTING ORGANIZATION: Intelligent Systems Technology ...Intelligent Systems Technology , Incorporated For a period of five (5) years after completion of the project from which the data was generated, the

  13. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

    2013-10-01

    Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

  14. Conduction at a ferroelectric interface

    SciTech Connect

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

  15. Pathways towards ferroelectricity in hafnia

    NASA Astrophysics Data System (ADS)

    Huan, Tran Doan; Sharma, Vinit; Rossetti, George A.; Ramprasad, Rampi

    2014-08-01

    The question of whether one can systematically identify (previously unknown) ferroelectric phases of a given material is addressed, taking hafnia (HfO2) as an example. Low free energy phases at various pressures and temperatures are identified using a first-principles based structure search algorithm. Ferroelectric phases are then recognized by exploiting group theoretical principles for the symmetry-allowed displacive transitions between nonpolar and polar phases. Two orthorhombic polar phases occurring in space groups Pca21 and Pmn21 are singled out as the most viable ferroelectric phases of hafnia, as they display low free energies (relative to known nonpolar phases), and substantial switchable spontaneous electric polarization. These results provide an explanation for the recently observed surprising ferroelectric behavior of hafnia, and reveal pathways for stabilizing ferroelectric phases of hafnia as well as other compounds.

  16. Conduction at a ferroelectric interface

    DOE PAGES

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; ...

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

  17. Photovoltaic effect in Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Katiyar, Rajesh K.; Panwar, Neeraj; Morell, G.; Katiyar, Ram S.

    2010-03-01

    Photovoltaic effect in ferroelectric materials is of much interest due to the anomalously large open circuit photovoltages when illuminated. It is concluded that this unprecedented high value of photovoltaic effect is due to the presence of non-centrosymmetry in the ferroelectric materials which gives rise to electron excitation, relaxation, and scattering processes. The photovoltaic efficiencies are, however, limited due to small current densities and the large band gap values of the ferroelectric materials. We have synthesized thin films of BiFeO3 (a low band gap material ˜2.67eV) and ferroelectric material SrBi2Ta2O9(SBT) on silicon substrates with ITO as the bottom electrode. The band gap of the SBT has been decreased by incorporating metallic particles Ag, Pt. in the ferroelectric matrix. The results will be presented.

  18. Ferromagnetic and ferroelectric nanoparticles in liquid crystals

    NASA Astrophysics Data System (ADS)

    Reznikov, Yuriy; Glushchenko, Anatoliy; Garbovskiy, Yuriy

    This chapter introduces the basic principles of physics of magnetic and ferroelectric nanoparticles suspensions in thermotropic liquid crystals (LCs). It also covers the main features of such suspensions along with the look at the challenges that researchers in the field are facing today. Special attention is paid to understanding of major physical mechanisms responsible for the inuence of nanoparticles on the properties of LCs. In the case of magnetic nanoparticles, their dipole moments are aligned by an external magnetic field that, in turn, results in a reorientation of the LC due to the surface anchoring between the nanoparticles and the LC. This mechanical coupling between the LC and the magnetic particles determines the unique sensitivity of the suspension to magnetic fields. In regard to the ferroelectric particles, their effect on LCs is due to a strong electric field by the permanent electric dipoles of the particles. This field is strong enough to change the orientational ordering of the LC surrounding the particle. In addition, the above-mentioned mechanism of the surface anchoring may also take place. The ongoing scientific and technological problems related to the suspensions are discussed. Among such problems are the stability of the suspensions, selection of the proper surfactants, formation of the particle chains, and the effect of the electric charges on the properties of the ferroelectric liquid crystal suspensions.

  19. Developing a comprehensive electronic health record to enhance nursing care coordination, use of technology, and research.

    PubMed

    Rantz, Marilyn J; Skubic, Marjorie; Alexander, Greg; Popescu, Mihail; Aud, Myra A; Wakefield, Bonnie J; Koopman, Richelle J; Miller, Steven J

    2010-01-01

    As in acute care, use of health information technology in long-term care holds promise for increased efficiency, better accuracy, reduced costs, and improved outcomes. A comprehensive electronic health record (EHR), which encompasses all health care measures that clinicians want to use-both standard health care assessments and those acquired through emerging technology-is the key to improved, efficient clinical decision making. New technologies using sensors to passively monitor older adults at home are being developed and are commercially available. However, integrating the clinical information systems with passive monitoring data so that clinical decision making is enhanced and patient records are complete is challenging. Researchers at the University of Missouri (MU) are developing a comprehensive EHR to: (a) enhance nursing care coordination at TigerPlace, independent senior housing that helps residents age in place; (b) integrate clinical data and data from new technology; and (c) advance technology and clinical research.

  20. Ferroelectric optical image comparator

    DOEpatents

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  1. Ferroelectric optical image comparator

    DOEpatents

    Butler, Michael A.; Land, Cecil E.; Martin, Stephen J.; Pfeifer, Kent B.

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  2. Nanoscale bit formation in highly (111)-oriented ferroelectric thin films deposited on glass substrates for high-density storage media.

    SciTech Connect

    Kim, D. H.; Kim, Y. K.; Hong, S.; Kim, Y.; Baik, S.

    2011-04-21

    PbTiO{sub 3} (PTO) ferroelectric films on Pt(111) bottom electrode layers covering Ta/glass were prepared using pulsed laser deposition. X-ray diffraction patterns revealed that the PTO films were preferentially (111)-oriented. The films were highly crystalline and had a smooth surface with root mean square (RMS) roughness of 1.5 nm. Ferroelectric properties of the PTO films were characterized using piezoresponse force microscopy (PFM). PFM techniques achieved ferroelectric polarization bits with a minimum width of 22 nm, which corresponds to a potential recording density of 1.3 Tbit/in{sup 2} in ferroelectric storage devices.

  3. Health information technology: integration of clinical workflow into meaningful use of electronic health records.

    PubMed

    Bowens, Felicia M; Frye, Patricia A; Jones, Warren A

    2010-10-01

    This article examines the role that clinical workflow plays in successful implementation and meaningful use of electronic health record (EHR) technology in ambulatory care. The benefits and barriers of implementing EHRs in ambulatory care settings are discussed. The researchers conclude that widespread adoption and meaningful use of EHR technology rely on the successful integration of health information technology (HIT) into clinical workflow. Without successful integration of HIT into clinical workflow, clinicians in today's ambulatory care settings will continue to resist adoption and implementation of EHR technology.

  4. Study of the spatial resolution of laser thermochemical technology for recording diffraction microstructures

    SciTech Connect

    Veiko, V P; Korol'kov, V I; Poleshchuk, A G; Sametov, A R; Shakhno, E A; Yarchuk, M V

    2011-07-31

    The thermochemical method for recording data, which is based on local laser oxidation of a thin metal film with subsequent etching of the unirradiated region, is an alternative to laser photolithography and direct laser removal of the film material. This recording technology is characterised by the absence of thermal and hydrodynamic image distortions, as in the case of laser ablation, and the number of necessary technological operations is much smaller as compared with the photomask preparation in classical photolithography. The main field of application of the thermochemical technology is the fabrication of diffraction optical elements (DOEs), which are widely used in printers, bar-code readers, CD and DVD laser players, etc. The purpose of this study is to increase the resolution of thermochemical data recording on thin chromium films. (interaction of laser radiation with matter)

  5. Multigap Semiconducting ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Davies, Peter; Rappe, Andrew

    2013-03-01

    The energy conversion efficiency of a solar cell is directly related to the band gap of the material. By doping ferroelectric perovskites with Bi5+ on the B-site, we propose low band-gap materials suitable for bulk photovoltaic effect and related solar applications.Our DFT calculations indicate that the low-lying 6 s empty states of the electronegative Bi atom produce empty isolated bands in the gap of the parent materials, effectively lowering the band gap by 1 ~2eV in various perovskites. Ferroelectricity (and therefore inversion symmetry breaking) weakens but survives upon doping, which enables the ``shift current'' mechanism for photocurrent generation, while the decreased band gap helps absorb low energy photons in the visible range. Furthermore, the existence of multiple band gaps allows for solar conversion devices with efficiency beyond the traditional Shockly-Queisser limit, in which successive photon excitations result in carriers with higher energy than a single-step excitation would achieve.

  6. Ferroelectric tunneling under bias voltages

    NASA Astrophysics Data System (ADS)

    Ma, Z. J.; Chen, G.; Zhou, P.; Mei, Z. H.; Zhang, T. J.

    2017-01-01

    Theoretical investigations of ferroelectric tunneling in a SrRuO3/BaTiO3/Pt junction were conducted, and critical expressions for the surface charge density in the electrodes and the potential distribution across the tunnel junction were derived. It was found that the screening charges associated with the ferroelectric polarization and the charging effect of the capacitor jointly contribute to the charges in the electrodes. A current-voltage study simulating the ‘read’ operation indicated that the tunneling electroresistance effect increases with the ferroelectric thickness, and the tunneling electroresistance values agree well with experimental results.

  7. Spectroscopic signature for ferroelectric ice

    NASA Astrophysics Data System (ADS)

    Wójcik, Marek J.; Gług, Maciej; Boczar, Marek; Boda, Łukasz

    2014-09-01

    Various forms of ice exist within our galaxy. Particularly intriguing type of ice - ‘ferroelectric ice' was discovered experimentally and is stable in temperatures below 72 K. This form of ice can generate enormous electric fields and can play an important role in planetary formation. In this letter we present Car-Parrinello simulation of infrared spectra of ferroelectric ice and compare them with spectra of hexagonal ice. Librational region of the spectra can be treated as spectroscopic signature of ice XI and can be of help to identify ferroelectric ice in the Universe.

  8. 77 FR 42764 - Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology Royalty Funds...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-20

    ... Copyright Royalty Board Distribution of the 2005, 2006, 2007 and 2008 Digital Audio Recording Technology... the digital audio recording technology royalty fees in the 2005, 2006, 2007 and 2008 Musical Works... royalties on digital audio recording devices and media that are distributed in the United States. 17...

  9. New technology in dietary assessment: a review of digital methods in improving food record accuracy.

    PubMed

    Stumbo, Phyllis J

    2013-02-01

    Methods for conducting dietary assessment in the United States date back to the early twentieth century. Methods of assessment encompassed dietary records, written and spoken dietary recalls, FFQ using pencil and paper and more recently computer and internet applications. Emerging innovations involve camera and mobile telephone technology to capture food and meal images. This paper describes six projects sponsored by the United States National Institutes of Health that use digital methods to improve food records and two mobile phone applications using crowdsourcing. The techniques under development show promise for improving accuracy of food records.

  10. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    SciTech Connect

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  11. I-V Characteristics of a Ferroelectric Field Effect Transistor

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen

    1999-01-01

    There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

  12. Ferroelectric capacitor with reduced imprint

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  13. Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

    NASA Technical Reports Server (NTRS)

    VanKeuls, Frederick W.

    1999-01-01

    Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

  14. Ferroelectric infrared detector and method

    DOEpatents

    Lashley, Jason Charles; Opeil, Cyril P.; Smith, James Lawrence

    2010-03-30

    An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a .lamda. shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

  15. Ferroelectric Fluoride Memory FET Development

    DTIC Science & Technology

    1993-10-01

    After’ First Metal Definition ..................... 53 Figure 3-30: Initial BMF FEMFETs Demonstrated Ferroelectric Behavior ................ 57 I Figure...as bismuth titanate. 2.0 INTRODUCTION The concept of a thin film ferroelectric memory field-effect transistor (FEMFET) is not new. The first FEMFET...candidate for these studies. BaF2, and MgF 2 have similar melting and evaporation temperatures, and their vapor pressures were also found to be comparable

  16. Hybridity as a process of technology's 'translation': customizing a national Electronic Patient Record.

    PubMed

    Petrakaki, Dimitra; Klecun, Ela

    2015-01-01

    This paper explores how national Electronic Patient Record (EPR) systems are customized in local settings and, in particular, how the context of their origin plays out with the context of their use. It shows how representations of healthcare organizations and of local clinical practice are built into EPR systems within a complex context whereby different stakeholder groups negotiate to produce an EPR package that aims to meet both local and generic needs. The paper draws from research into the implementation of the National Care Record Service, a part of the National Programme for Information Technology (NPfIT), in the English National Health Service (NHS). The paper makes two arguments. First, customization of national EPR is a distributed process that involves cycles of 'translation', which span across geographical, cultural and professional boundaries. Second, 'translation' is an inherently political process during which hybrid technology gets consolidated. The paper concludes, that hybrid technology opens up possibilities for standardization of healthcare.

  17. A Community Health Record: Improving Health Through Multisector Collaboration, Information Sharing, and Technology

    PubMed Central

    Garrett, Nedra; Kriseman, Jeffrey; Crum, Melvin; Rafalski, Edward M.; Sweat, David; Frazier, Renee; Schearer, Sue; Cutts, Teresa

    2016-01-01

    We present a framework for developing a community health record to bring stakeholders, information, and technology together to collectively improve the health of a community. It is both social and technical in nature and presents an iterative and participatory process for achieving multisector collaboration and information sharing. It proposes a methodology and infrastructure for bringing multisector stakeholders and their information together to inform, target, monitor, and evaluate community health initiatives. The community health record is defined as both the proposed framework and a tool or system for integrating and transforming multisector data into actionable information. It is informed by the electronic health record, personal health record, and County Health Ranking systems but differs in its social complexity, communal ownership, and provision of information to multisector partners at scales ranging from address to zip code. PMID:27609300

  18. A wireless recording system that utilizes Bluetooth technology to transmit neural activity in freely moving animals.

    PubMed

    Hampson, Robert E; Collins, Vernell; Deadwyler, Sam A

    2009-09-15

    A new wireless transceiver is described for recording individual neuron firing from behaving rats utilizing Bluetooth transmission technology and a processor onboard for discrimination of neuronal waveforms and associated time stamps. This universal brain activity transmitter (UBAT) is attached to rodents via a backpack and amplifier headstage and can transmit 16 channels of captured neuronal firing data via a Bluetooth transceiver chip over very large and unconstrained distances. The onboard microprocessor of the UBAT allows flexible online control over waveform isolation criteria via transceiver instruction and the two-way communication capacity allows for closed-loop applications between neural events and behavioral or physiological processes which can be modified by transceiver instructions. A detailed description of the multiplexer processing of channel data as well as examples of neuronal recordings in different behavioral testing contexts is provided to demonstrate the capacity for robust transmission within almost any laboratory environment. A major advantage of the UBAT is the long transmission range and lack of object-based line of sight interference afforded by Bluetooth technology, allowing flexible recording capabilities within multiple experimental paradigms without interruption. Continuous recordings over very large distance separations from the monitor station are demonstrated providing experimenters with recording advantages not previously available with other telemetry devices.

  19. HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zheng-Ran; Han, Zu-Yin; Jung, Hyung-Suk

    2016-10-01

    Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology. Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

  20. A CMOS compatible, ferroelectric tunnel junction.

    PubMed

    Ambriz Vargas, Fabian; Kolhatkar, Gitanjali; Broyer, Maxime; Hadj Youssef, Azza; Nouar, Rafik; Sarkissian, Andranik; Thomas, Reji; Gomez-Yanez, Carlos; Gauthier, Marc A; Ruediger, Andreas

    2017-04-03

    In recent years, the experimental demonstration of Ferroelectric Tunnel Junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). The present communication reports the fabrication of an FTJ based on a CMOS compatible tunnel barrier Hf0.5Zr0.5O2 (6 unit cells thick) on an equally CMOS compatible TiN electrode. Analysis of the FTJ by grazing angle incidence X-ray diffraction confirmed the formation of the non-centrosymmetric orthorhombic phase (Pbc2_1, ferroelectric phase). The FTJ characterization is followed by the reconstruction of the electrostatic potential profile in the as-grown TiN/Hf0.5Zr0.5O2/Pt heterostructure. A direct tunneling current model across a trapezoidal barrier was used to correlate the electronic and electrical properties of our FTJ devices. The good agreement between the experimental and the theoretical model attests to the tunneling electroresistance effect (TER) in our FTJ device. A TER ratio of ~15 was calculated for the present FTJ device at low read voltage (+0.2 V). This study makes Hf0.5Zr0.5O2 a promising candidate for integration into conventional Si memory technology.

  1. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

    PubMed

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-28

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  2. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  3. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    PubMed Central

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  4. Incorporating Pharmacogenomics into Health Information Technology, Electronic Health Record and Decision Support System: An Overview.

    PubMed

    Alanazi, Abdullah

    2017-02-01

    As the adoption of information technology in healthcare is rising, the potentiality of moving Pharmacogenomics from benchside to bedside is aggravated. This paper reviews the current status of Pharmacogenomics (PGx) information and the attempts for incorporating them into the Electronic Health Record (EHR) system through Decision Support Systems (DSSs). Rigorous review strategies of PGx information and providing context-relevant recommendations in form of action plan- dose adjustment, lab tests rather than just information- would be ideal for making clinical recommendations out of PGx information. Lastly, realistic projections of what pharmacogenomics can provide is another important aspect in incorporating Pharmacogenomics into health information technology.

  5. Ferroelectricity in undoped hafnium oxide

    SciTech Connect

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  6. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    PubMed Central

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-01-01

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997

  7. Microwave a.c. conductivity of domain walls in ferroelectric thin films.

    PubMed

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  8. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    SciTech Connect

    Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

  9. Microwave a.c. conductivity of domain walls in ferroelectric thin films

    DOE PAGES

    Tselev, Alexander; Yu, Pu; Cao, Ye; ...

    2016-05-31

    Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphologicalmore » roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.« less

  10. Stress effects in ferroelectric perovskite thin-films

    NASA Astrophysics Data System (ADS)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  11. New Ferroelectric Aminoguanidinium Hexafluorozirconate

    NASA Astrophysics Data System (ADS)

    Bauer, Matt; Arbogast, Darin; Gallagher, Craig; Christie, Jim; Pugmire, David; Paulsen, Brian; Ross, Charles; Photinos, Panos; Nielson, Roger; Abrahams, Sidney C.

    2000-03-01

    Satisfaction of structural criteria led to the prediction that anhydrous aminoguanidinium hexafluorozirconate CN_4H_8ZrF6 is a new ferroelectric. Calorimetric and dielectric permittivity measurements reveal a highly-reproducible anomaly at the Curie temperature Tc = 383(1) K. The heat capacity undergoes an entropy change of 0.7(1) J mol-1 K-1 at Tc as the relative permittivity increases sharply by nearly an order of magnitude. Dielectric hysteresis at 295 K under the application of 1 MV m-1 ac is also observed at all T < Tc but not at T > T_c, confirming the prediction. Saturation is not reached before electric breakdown above 1 MV m-1 ac. The piezoelectric coefficient d_33 = 1.9 pC N-1 at 298 K. Polarisation reversal requires each symmetry-independent CN_4H_8^+2 ion to tilt and both N NH3 and C (NH_2)2 groups to rotate about the C N bond. Small atomic displacements within the ZrF_6-2 anion lead to mirror symmetry in course of the phase transition.

  12. Integrating health information technology and electronic health records into the management of fibromyalgia.

    PubMed

    Wells, Alvin F; Arnold, Lesley M; Curtis, Cassandra E; Dunegan, L Jean; Lapp, Charles W; McCarberg, Bill H; Clair, Andrew

    2013-07-01

    Fibromyalgia (FM) is a widespread chronic pain condition that represents a significant economic burden for patients and health care systems. Effective treatment of FM requires a multidisciplinary management strategy that incorporates pharmacologic and nonpharmacologic therapy. Steps such as reducing the time to diagnosis and improving treatment decisions can result in significant cost savings and improved patient outcomes. An FM management framework, based on patient education and goal setting, has emphasized the need for ongoing care of patients with FM. In this article, we discuss how this framework could be further improved through the use of health information technology, including electronic health records. Health information technology/electronic health records can be incorporated at every stage of patient care, from initial presentation to diagnosis, through to making treatment decisions and maintaining ongoing patient management. This can lead to a number of potential benefits for patients with FM (by improving their level of care), primary care providers (by creating greater efficiencies), and the health care system (by reducing costs). Ultimately, the treatment and care of patients with FM need be no more burdensome to primary care providers than any other chronic illness. Through the greater efficiencies and optimized treatment approaches facilitated by health information technology/electronic health records, it should be possible to drive best-practice care for patients with FM and improve patient outcomes.

  13. New Advanced Technologies to Provide Decentralised and Secure Access to Medical Records: Case Studies in Oncology

    PubMed Central

    Quantin, Catherine; Coatrieux, Gouenou; Allaert, François André; Fassa, Maniane; Bourquard, Karima; Boire, Jean-Yves; de Vlieger, Paul; Maigne, Lydia; Breton, Vincent

    2009-01-01

    The main problem for health professionals and patients in accessing information is that this information is very often distributed over many medical records and locations. This problem is particularly acute in cancerology because patients may be treated for many years and undergo a variety of examinations. Recent advances in technology make it feasible to gain access to medical records anywhere and anytime, allowing the physician or the patient to gather information from an “ephemeral electronic patient record”. However, this easy access to data is accompanied by the requirement for improved security (confidentiality, traceability, integrity, ...) and this issue needs to be addressed. In this paper we propose and discuss a decentralised approach based on recent advances in information sharing and protection: Grid technologies and watermarking methodologies. The potential impact of these technologies for oncology is illustrated by the examples of two experimental cases: a cancer surveillance network and a radiotherapy treatment plan. It is expected that the proposed approach will constitute the basis of a future secure “google-like” access to medical records. PMID:19718446

  14. Ferroelectric order in liquid crystal phases of polar disk-shaped ellipsoids

    NASA Astrophysics Data System (ADS)

    Bose, Tushar Kanti; Saha, Jayashree

    2014-05-01

    The demonstration of a spontaneous macroscopic ferroelectric order in liquid phases in the absence of any long range positional order is considered an outstanding problem of both fundamental and technological interest. Recently, we reported that a system of polar achiral disklike ellipsoids can spontaneously exhibit a long searched ferroelectric nematic phase and a ferroelectric columnar phase with strong axial polarization. The major role is played by the dipolar interactions. The model system of interest consists of attractive-repulsive Gay-Berne oblate ellipsoids embedded with two parallel point dipoles positioned symmetrically on the equatorial plane of the ellipsoids. In the present work, we investigate in detail the profound effects of changing the separation between the two symmetrically placed dipoles and the strength of the dipoles upon the existence of different ferroelectric discotic liquid crystal phases via extensive off-lattice N-P-T Monte Carlo simulations. Ferroelectric biaxial phases are exhibited in addition to the uniaxial ferroelectric fluids where the phase biaxiality results from the dipolar interactions. The structures of all the ferroelectric configurations of interest are presented in detail. Simple phase diagrams are determined which include different polar and apolar discotic fluids generated by the system.

  15. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  16. Polarization switching in ferroelectric cathodes

    SciTech Connect

    Rosenman, G.; Shur, D.; Garb, K.; Cohen, R.; Krasik, Y.E.

    1997-07-01

    A new mechanism of polarization switching and electron emission in ferroelectric cathodes is proposed. Surface flashover plasma of a ferroelectric origin was observed on a polar ferroelectric surface [D. Shur, G. Rosenman, and Ya. E. Krasik, Appl. Phys. Lett. {bold 70}, 574 (1997)]. Simultaneous measurements of switched charge and plasma density show that expanding surface plasma represents a dynamic switching electrode. Direct measurements of ion/electron emission currents and surface analysis implemented by different analytic tools indicate that electrons and ions from the surface plasma contribute to spontaneous polarization screening. The high energy of charged particles emitted from the surface plasma is ascribed to a high surface potential during polarization switching. {copyright} {ital 1997 American Institute of Physics.}

  17. Health information technology: initial set of standards, implementation specifications, and certification criteria for electronic health record technology. Interim final rule.

    PubMed

    2010-01-13

    The Department of Health and Human Services (HHS) is issuing this interim final rule with a request for comments to adopt an initial set of standards, implementation specifications, and certification criteria, as required by section 3004(b)(1) of the Public Health Service Act. This interim final rule represents the first step in an incremental approach to adopting standards, implementation specifications, and certification criteria to enhance the interoperability, functionality, utility, and security of health information technology and to support its meaningful use. The certification criteria adopted in this initial set establish the capabilities and related standards that certified electronic health record (EHR) technology will need to include in order to, at a minimum, support the achievement of the proposed meaningful use Stage 1 (beginning in 2011) by eligible professionals and eligible hospitals under the Medicare and Medicaid EHR Incentive Programs.

  18. Guide to the Records Relating to Science and Technology in the British Public Record Office: A RAMP Study.

    ERIC Educational Resources Information Center

    Jubb, Michael

    Prepared under contract with the International Council on Archives (ICA), this guide provides descriptions of all classes of public records held by the British Public Record Office (PRO) which are likely to contain scientific or technical information. The PRO is responsible for keeping and making available to the public those records of the…

  19. Ferroelectric control of spin polarization.

    PubMed

    Garcia, V; Bibes, M; Bocher, L; Valencia, S; Kronast, F; Crassous, A; Moya, X; Enouz-Vedrenne, S; Gloter, A; Imhoff, D; Deranlot, C; Mathur, N D; Fusil, S; Bouzehouane, K; Barthélémy, A

    2010-02-26

    A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

  20. Ferroelectric Fluid Flow Control Valve

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  1. Doped liquid nitrobenzene is ferroelectric.

    PubMed

    Shelton, David P; Quine, Zachary

    2007-11-28

    The high resolution hyper-Rayleigh light scattering spectrum for liquid nitrobenzene doped with triflic acid (CF(3)SO(3)H) shows a narrow spike at zero frequency shift which has the polarization signature of a polar longitudinal collective mode. This spectral spike disappears for pure nitrobenzene. The spectral spike is interpreted as due to ferroelectric domains in the liquid. The dopant molecules appear to induce ferroelectric organization of the nitrobenzene molecules which is otherwise absent in the pure liquid. Estimated domain size is 34 nm and relaxation time is 50 ns.

  2. Elastocaloric effect in ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chauhan, Aditya; Patel, Satyanarayan; Vaish, Rahul

    2015-04-01

    Elastocaloric effect has been experimentally demonstrated in bulk (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 polycrystalline ferroelectric material. Predictions were made using Maxwell's relationship for elastocaloric effect. A maximum elastocaloric effect of 1.55 K was observed for an initial material temperature of 340 K and applied compressive stress of 0-250 MPa (under a constant electric field of 2 MV m-1). The reported value is several times larger than the peak electrocaloric effect for the same material. The results indicate that ferroelectric materials possess a huge potential for elastocaloric refrigeration.

  3. Polar Superhelices in Ferroelectric Chiral Nanosprings

    PubMed Central

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jian-Shan; Wang, Jie; Kitamura, Takayuki

    2016-01-01

    Topological objects of nontrivial spin or dipolar field textures, such as skyrmions, merons, and vortices, interacting with applied external fields in ferroic materials are of great scientific interest as an intriguing playground of unique physical phenomena and novel technological paradigms. The quest for new topological configurations of such swirling field textures has primarily been done for magnets with Dzyaloshinskii-Moriya interactions, while the absence of such intrinsic chiral interactions among electric dipoles left ferroelectrics aside in this quest. Here, we demonstrate that a helical polarization coiled into another helix, namely a polar superhelix, can be extrinsically stabilized in ferroelectric nanosprings. The interplay between dipolar interactions confined in the chiral geometry and the complex strain field of mixed bending and twisting induces the superhelical configuration of electric polarization. The geometrical structure of the polar superhelix gives rise to electric chiralities at two different length scales and the coexistence of three order parameters, i.e., polarization, toroidization, and hypertoroidization, both of which can be manipulated by homogeneous electric and/or mechanical fields. Our work therefore provides a new geometrical configuration of swirling dipolar fields, which offers the possibility of multiple order-parameters, and electromechanically controllable dipolar chiralities and associated electro-optical responses. PMID:27713540

  4. A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

    PubMed

    Lee, June Hyuk; Fang, Lei; Vlahos, Eftihia; Ke, Xianglin; Jung, Young Woo; Kourkoutis, Lena Fitting; Kim, Jong-Woo; Ryan, Philip J; Heeg, Tassilo; Roeckerath, Martin; Goian, Veronica; Bernhagen, Margitta; Uecker, Reinhard; Hammel, P Chris; Rabe, Karin M; Kamba, Stanislav; Schubert, Jürgen; Freeland, John W; Muller, David A; Fennie, Craig J; Schiffer, Peter; Gopalan, Venkatraman; Johnston-Halperin, Ezekiel; Schlom, Darrell G

    2010-08-19

    Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high

  5. A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

    SciTech Connect

    Lee, J. H.; Fang, L.; Vlahos, E.; Ke, X.; Jung, Y.W.; Fitting Kourkaoutis, L.; Kim, J. W.; Ryan, P.; Heeg, T.; Roeckerath, M.; Goian, V.; Bernhagen, M.; Uecker, R.; Hammel, P.C.; Rabe, K. M.; Kamba, S.; Schubert, J.; Freeland, J.W.; Muller, D.A.; Fennie, C.J.; Schiffer, P.; Gopalan, V.; Johnston-Halperin, E.; Schlom, D. G.

    2010-08-19

    Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO{sub 3}, was predicted to exhibit strong ferromagnetism (spontaneous magnetization, {approx}7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, {approx}10 {micro}C cm{sup -2}) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high

  6. Electronic Medical Records and the Technological Imperative: The Retrieval of Dialogue in Community-Based Primary Care.

    PubMed

    Franz, Berkeley; Murphy, John W

    2015-01-01

    Electronic medical records are regarded as an important tool in primary health-care settings. Because these records are thought to standardize medical information, facilitate provider communication, and improve office efficiency, many practices are transitioning to these systems. However, much of the concern with improving the practice of record keeping has related to technological innovations and human-computer interaction. Drawing on the philosophical reflection raised in Jacques Ellul's work, this article questions the technological imperative that may be supporting medical record keeping. Furthermore, given the growing emphasis on community-based care, this article discusses important non-technological aspects of electronic medical records that might bring the use of these records in line with participatory primary-care medicine.

  7. Health information technology: standards, implementation specifications, and certification criteria for electronic health record technology, 2014 edition; revisions to the permanent certification program for health information technology. Final rule.

    PubMed

    2012-09-04

    With this final rule, the Secretary of Health and Human Services adopts certification criteria that establish the technical capabilities and specify the related standards and implementation specifications that Certified Electronic Health Record (EHR) Technology will need to include to, at a minimum, support the achievement of meaningful use by eligible professionals, eligible hospitals, and critical access hospitals under the Medicare and Medicaid EHR Incentive Programs beginning with the EHR reporting periods in fiscal year and calendar year 2014. This final rule also makes changes to the permanent certification program for health information technology, including changing the program's name to the ONC HIT Certification Program.

  8. Genetic data and electronic health records: a discussion of ethical, logistical and technological considerations

    PubMed Central

    Shoenbill, Kimberly; Fost, Norman; Tachinardi, Umberto; Mendonca, Eneida A

    2014-01-01

    Objective The completion of sequencing the human genome in 2003 has spurred the production and collection of genetic data at ever increasing rates. Genetic data obtained for clinical purposes, as is true for all results of clinical tests, are expected to be included in patients’ medical records. With this explosion of information, questions of what, when, where and how to incorporate genetic data into electronic health records (EHRs) have reached a critical point. In order to answer these questions fully, this paper addresses the ethical, logistical and technological issues involved in incorporating these data into EHRs. Materials and methods This paper reviews journal articles, government documents and websites relevant to the ethics, genetics and informatics domains as they pertain to EHRs. Results and discussion The authors explore concerns and tasks facing health information technology (HIT) developers at the intersection of ethics, genetics, and technology as applied to EHR development. Conclusions By ensuring the efficient and effective incorporation of genetic data into EHRs, HIT developers will play a key role in facilitating the delivery of personalized medicine. PMID:23771953

  9. An overview of advanced nonvolatile memory technologies

    SciTech Connect

    Dressendorfer, P.V.

    1991-01-01

    This report is an overview of advanced nonvolatile memory technologies. The memory technologies discussed are: floating gate nonvolatile memory technologies; SNOS nonvolatile technology; ferroelectric technology; and thin film magnetic memories.

  10. Frequency/phase agile microwave circuits on ferroelectric films

    NASA Astrophysics Data System (ADS)

    Romanofsky, Robert Raymond

    This work describes novel microwave circuits that can be tuned in either frequency or phase through the use of nonlinear dielectrics, specifically thin ferroelectric films. These frequency and phase agile circuits in many cases provide a new capability or offer the potential for lower cost alternatives in satellite and terrestrial communications and sensor applications. A brief introduction to nonlinear dielectrics and a summary of some of the special challenges confronting the practical insertion of ferroelectric technology into commercial systems is provided. A theoretical solution for the propagation characteristics of the multi-layer structures, with emphasis on a new type of phase shifter based on coupled microstrip, lines, is developed. The quasi-TEM analysis is based on a variational solution for line capacitance and an extension of coupled transmission line theory. It is shown that the theoretical model is applicable to a broad class of multi-layer transmission lines. The critical role that ferroelectric film thickness plays in loss and phase-shift is closely examined. Experimental data for both thin film BaxSr1-xTiO 3 phase shifters near room temperature and SMO3 phase shifters at cryogenic temperatures on MgO and LaAlO3 substrates is included. Some of these devices demonstrated an insertion loss of less than 5 dB at Ku-band with continuously variable phase shift in excess of 360 degrees. The performance of these devices is superior to the state-of-the-art semiconductor counterparts. Frequency and phase agile antenna prototypes including a microstrip patch that can operate at multiple microwave frequency bands and a new type of phased array antenna concept called the ferroelectric reflectarray are introduced. Modeled data for tunable microstrip patch antennas is presented for various ferroelectric film thickness. A prototype linear phased array, with a conventional beam-forming manifold, and an electronic controller is described. This is the first

  11. Leveraging electronic healthcare record standards and semantic web technologies for the identification of patient cohorts

    PubMed Central

    Fernández-Breis, Jesualdo Tomás; Maldonado, José Alberto; Marcos, Mar; Legaz-García, María del Carmen; Moner, David; Torres-Sospedra, Joaquín; Esteban-Gil, Angel; Martínez-Salvador, Begoña; Robles, Montserrat

    2013-01-01

    Background The secondary use of electronic healthcare records (EHRs) often requires the identification of patient cohorts. In this context, an important problem is the heterogeneity of clinical data sources, which can be overcome with the combined use of standardized information models, virtual health records, and semantic technologies, since each of them contributes to solving aspects related to the semantic interoperability of EHR data. Objective To develop methods allowing for a direct use of EHR data for the identification of patient cohorts leveraging current EHR standards and semantic web technologies. Materials and methods We propose to take advantage of the best features of working with EHR standards and ontologies. Our proposal is based on our previous results and experience working with both technological infrastructures. Our main principle is to perform each activity at the abstraction level with the most appropriate technology available. This means that part of the processing will be performed using archetypes (ie, data level) and the rest using ontologies (ie, knowledge level). Our approach will start working with EHR data in proprietary format, which will be first normalized and elaborated using EHR standards and then transformed into a semantic representation, which will be exploited by automated reasoning. Results We have applied our approach to protocols for colorectal cancer screening. The results comprise the archetypes, ontologies, and datasets developed for the standardization and semantic analysis of EHR data. Anonymized real data have been used and the patients have been successfully classified by the risk of developing colorectal cancer. Conclusions This work provides new insights in how archetypes and ontologies can be effectively combined for EHR-driven phenotyping. The methodological approach can be applied to other problems provided that suitable archetypes, ontologies, and classification rules can be designed. PMID:23934950

  12. Fork gratings based on ferroelectric liquid crystals.

    PubMed

    Ma, Y; Wei, B Y; Shi, L Y; Srivastava, A K; Chigrinov, V G; Kwok, H-S; Hu, W; Lu, Y Q

    2016-03-21

    In this article, we disclose a fork grating (FG) based on the photo-aligned ferroelectric liquid crystal (FLC). The Digital Micro-mirror Device based system is used as a dynamic photomask to generated different holograms. Because of controlled anchoring energy, the photo alignment process offers optimal conditions for the multi-domain FLC alignment. Two different electro-optical modes namely DIFF/TRANS and DIFF/OFF switchable modes have been proposed where the diffraction can be switched either to no diffraction or to a completely black state, respectively. The FLC FG shows high diffraction efficiency and fast response time of 50µs that is relatively faster than existing technologies. Thus, the FLC FG may pave a good foundation toward optical vertices generation and manipulation that could find applications in a variety of devices.

  13. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

    PubMed

    Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V; Mikolajick, Thomas

    2014-12-23

    Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

  14. Employee problems and their consequences in the technology industry: evidence from surveys and counseling records.

    PubMed

    Wang, Ching-Wen; Lin, Po-Chang; Sha, Chyuan

    2014-06-01

    To support employees' work and health, organizations should help employees cope with common problems. Previous studies have focused primarily on work-related problems across multiple industries rather than on evaluating industry-specific issues. Here, two approaches identified common work and non-work employee problems in the technology industry with the strongest correlations with psychosomatic health and life satisfaction. Study 1 used questionnaires to identify the problems that were perceived as the most frequent by lower-level employees (N = 355) working in the technology industry. Study 2 evaluated employees' coping behaviors by analyzing (with permission) counseling records collected from an employee assistance service company (N = 276). Employees reported a variety of problems; work problems were the only problems (of the top 5 problems) reported in both studies. Several problems emerged in the counseling records (e.g., legal issues, career development, family and marriage problems, and emotional problems) but not in the surveys. Future research should apply these observations to develop scales for measuring employee stressors.

  15. Wearable Technology Surveillance Data for the Personal Health Record Using the Omaha System: Noise Exposure, Cardiovascular and Stress Biomarkers.

    PubMed

    Kerr, Madeleine J; Chin, Dal Lae; Monsen, Karen A; Hong, OiSaeng

    2016-01-01

    This poster describes a method to prepare noise and health data from wearable technology for standardized representation in the electronic personal health record thus enabling individuals to identify noise-related health risks. Using a case study approach, the authors demonstrate transformation of data to the Omaha System standardized terminology in order to depict the data graphically in a personal health record.

  16. Performance improvement indicators of the Medical Records Department and Information Technology (IT) in hospitals

    PubMed Central

    Ajami, Sima; Ketabi, Saedeh; Torabiyan, Fatemeh

    2015-01-01

    Medical Record Department (MRD) has a vital role in making short and long term plans to improve health system services. The aim of this study was to describe performance improvement indicators of hospital MRD and information technology (IT). Collection of Data: A search was conducted in various databases, through related keywords in articles, books, and abstracts of conferences from 2001 to 2009. About 58 articles and books were available which were evaluated and finally 15 of them were selected based on their relevance to the study. MRD must be capable of supporting tasks such as patient care and continuity, institute management processes, medical education programs, medical research, communication between different wards of a hospital and administrative and medical staff. The use of IT in MRD can facilitate access to department, expedite communication within and outside department, reduce space with electronic medical records, reduce costs, accelerate activities such as coding by use of coding guide software and facilitate retrieval of records that will ultimately improve the performance of MRD. PMID:26150874

  17. 36 CFR 1236.14 - What must agencies do to protect records against technological obsolescence?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Property NATIONAL ARCHIVES AND RECORDS ADMINISTRATION RECORDS MANAGEMENT ELECTRONIC RECORDS MANAGEMENT Records Management and Preservation Considerations for Designing and Implementing Electronic Information... must design and implement migration strategies to counteract hardware and software dependencies...

  18. FeTRAM. An organic ferroelectric material based novel random access memory cell.

    PubMed

    Das, Saptarshi; Appenzeller, Joerg

    2011-09-14

    Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

  19. Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Stolichnov, I.; Riester, S. W. E.; Trodahl, H. J.; Setter, N.; Rushforth, A. W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, T.

    2008-06-01

    Multiferroic structures that provide coupled ferroelectric and ferromagnetic responses are of significant interest as they may be used in novel memory devices and spintronic logic elements. One approach towards this goal is the use of composites that couple ferromagnetic and ferroelectric layers through magnetostrictive and piezoelectric strain transmitted across the interfaces. However, mechanical clamping of the films to the substrate limits their response. Structures where the magnetic response is modulated directly by the electric field of the poled ferroelectric would eliminate this constraint and provide a qualitatively higher level of integration, combining the emerging field of multiferroics with conventional semiconductor microelectronics. Here, we report the realization of such a device using (Ga,Mn)As, which is an archetypical diluted magnetic semiconductor with well-understood carrier-mediated ferromagnetism, and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature of the ferromagnetic semiconductor. The non-volatile gating of (Ga,Mn)As has been made possible by applying a low-temperature copolymer deposition technique that is distinct from pre-existing technologies for ferroelectric gates on magnetic oxides. This accomplishment opens a way to nanometre-scale modulation of magnetic semiconductor properties with rewritable ferroelectric domain patterns, operating at modest voltages and subnanosecond times.

  20. Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2007-01-01

    Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  1. About the deformation of ferroelectric hystereses

    NASA Astrophysics Data System (ADS)

    Schenk, T.; Yurchuk, E.; Mueller, S.; Schroeder, U.; Starschich, S.; Böttger, U.; Mikolajick, T.

    2014-12-01

    Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

  2. About the deformation of ferroelectric hystereses

    SciTech Connect

    Schenk, T. Yurchuk, E.; Mueller, S.; Schroeder, U.; Starschich, S.; Böttger, U.; Mikolajick, T.

    2014-12-15

    Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

  3. Biological, mechanical, and technological considerations affecting the longevity of intracortical electrode recordings.

    PubMed

    Harris, James P; Tyler, Dustin J

    2013-01-01

    Intracortical electrodes are important tools, with applications ranging from fundamental laboratory studies to potential solutions to intractable clinical applications. However, the longevity and reliability of the interfaces remain their major limitation to the wider implementation and adoption of this technology, especially in broader translational work. Accordingly, this review summarizes the most significant biological and technical factors influencing the long-term performance of intracortical electrodes. In a laboratory setting, intracortical electrodes have been used to study the normal and abnormal function of the brain. This improved understanding has led to valuable insights regarding many neurological conditions. Likewise, clinical applications of intracortical brain-machine interfaces offer the ability to improve the quality of life of many patients afflicted with high-level paralysis from spinal cord injury, brain stem stroke, amyotrophic lateral sclerosis, or other conditions. It is widely hypothesized that the tissue response to the electrodes, including inflammation, limits their longevity. Many studies have examined and modified the tissue response to intracortical electrodes to improve future intracortical electrode technologies. Overall, the relationship between biological, mechanical, and technological considerations are crucial for the fidelity of chronic electrode recordings and represent a presently active area of investigation in the field of neural engineering.

  4. Nanodynamics of ferroelectric ultrathin films.

    PubMed

    Zhang, Qingteng; Herchig, R; Ponomareva, I

    2011-10-21

    The nanodynamics of ferroelectric ultrathin films made of PbTi(0.6)Zr(0.4)TiO(3) alloy is explored via the use of a first-principles-based technique. Our atomistic simulations predict that the nanostripe domains which constitute the ground state of ferroelectric ultrathin films under most electric boundary conditions oscillate under a driving ac field. Furthermore, we find that the atomically thin wall, or nanowall, that separates the nanodomains with different polarization directions behaves as an elastic object and has a mass associated with it. The nanowall mass is size-dependent and gives rise to a unique size-driven transition from resonance to relaxational dynamics in ultrathin films. A general theory of nanodynamics in such films is developed and used to explain all computational findings. In addition, we find an unusual dynamical coupling between nanodomains and mechanical deformations that could potentially be used in ultrasensitive electromechanical nanosensors.

  5. Ferroelectric Stirling-Cycle Refrigerator

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    A Stirling-cycle refrigerator has a three-pump configuration and pumping sequence, in which one pump serves as a compressor. one pump serves as an expander, and one pump serves as a displacer. The pumps are ferroelectrically actuated diaphragm pumps which are coordinated by synchronizing the ferroelectric-actuator voltages in such a way that the net effect of the displacer is to reduce the deleterious effect of dead space; that is, to circulate a greater fraction of the working fluid through the heat exchangers than would be possible by use of the compressor and expander alone. In addition. the displacer can be controlled separately to make the flow of working fluid in the heat exchangers turbulent (to increase the rate of transfer of heat at the cost of greater resistance to flow) or laminar (to decrease the resistance to flow at the cost of a lower heat-transfer rate).

  6. Fracture behavior of ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Lupascu, Doru C.; Lynch, Christopher S.

    1999-06-01

    Piezoelectric actuators are key components in many smart structures applications. Long term reliability of these actuators becomes increasingly important as research makes the transition to commercial applications. Fracture toughness is a material parameter that measures a material's resistance to crack propagation. This is perhaps, one of the most important parameters for reliable device design. This paper reviews recent work by the authors on fracture behavior of ferroelectric ceramics. Vickers indentation data were used to determine the fracture toughness of a coarse and a fine grained PZT and two compositions of PLZT. R-curve data were obtained for two compositions of PLZT. The R-curve data presented here were generated using four point bend specimens with controlled surface flaws. The R-curve results compare favorably with the Vickers indentation data. A comparison of the R-curves for a ferroelectric composition of PLZT and a quadratic electrostrictive composition of PLZT demonstrate the contribution of domain reorientation to the toughening process.

  7. Domain Processes in Ferroelectric Ceramics

    DTIC Science & Technology

    1994-04-14

    WALLS Electron holography utilizing the wave characteristics of electrons. Through a sharp emission tip, the emitted electron beam is largely coherent, or...mirostructural modulation at 25% doping. The strongly first order ferroelectric phase transition in PbTiO3 is also gradually changed to a nearly second...a new domain configuraton. 13 The end-member of the PZT solid solution, PbTiO3 , has the highest transition temperature (Tc = 490 °C) and the largest

  8. Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit

    PubMed Central

    Vlasin, Ondrej; Casals, Blai; Dix, Nico; Gutiérrez, Diego; Sánchez, Florencio; Herranz, Gervasi

    2015-01-01

    We have imaged optically the spatial distributions of ferroelectricity and piezoelectricity at the diffraction limit. Contributions to the birefringence from electro-optics –linked to ferroelectricity– as well as strain –arising from converse piezoelectric effects– have been recorded simultaneously in a BaTiO3 thin film. The concurrent recording of electro-optic and piezo-optic mappings revealed that, far from the ideal uniformity, the ferroelectric and piezoelectric responses were strikingly inhomogeneous, exhibiting significant fluctuations over the scale of the micrometer. The optical methods here described are appropriate to study the variations of these properties simultaneously, which are of great relevance when ferroelectrics are downscaled to small sizes for applications in data storage and processing. PMID:26522345

  9. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    NASA Technical Reports Server (NTRS)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  10. LTCC Phase Shifters Based on Tunable Ferroelectric Composite Thick Films

    NASA Astrophysics Data System (ADS)

    Nikfalazar, M.; Kohler, C.; Heunisch, A.; Wiens, A.; Zheng, Y.; Schulz, B.; Mikolajek, M.; Sohrabi, M.; Rabe, T.; Binder, J. R.; Jakoby, R.

    2015-11-01

    This paper presents, the investigation of tunable components based on LTCC technology, implementing ferroelectric tunable thick-film dielectric. The tunable loaded line phase shifters are fabricated with metal-insulator-metal (MIM) varactors to demonstrate the capabilities of this method for packaging of the tunable components. The MIM varactors consist of one tunable dielectric paste layer that is printed between two silver layers. The tunable ferroelectric paste is optimized for LTCC sintering temperature around 850°C. The phase shifters are fabricated in two different process. They were achieved a figure of merit of 24°/dB (phase shift 192°) at 3 GHz and 18°/dB (phase shift 98°) at 4.4 GHz by using seven unit cells that each unit cell consisting of two MIM varactors.

  11. Kinetics of Ferroelectric Phase Transition: Nonlinear Pyroelectric Effect and Ferroelectric Solar Cell

    NASA Astrophysics Data System (ADS)

    Itskovsky, M.

    1999-08-01

    Kinetics of a ferroelectric phase transition in thin ferroelectric layer (film), coated with metallic films [metal-ferroelectric-metal (MFM) system] and overheated with various heating rates through phase transition temperature by solar or laser irradiation impulse, is investigated. Dynamical nonlinear pyroelectric effect (pyroelectric current and polarization) as well as anomalies of dielectric permittivity and specific heat are calculated as functions of changing in time temperature for various heating rates. Conversion efficiency during heating of the MFM system (served as ferroelectric solar cell), operating due to the nonlinear pyroelectric effect in the ferroelectric phase transition region, ranges from a few percent for ferroelectrics of the triglycine sulphate (TGS) type to above 10% for the NaNO2 type ferroelectrics, reaching the order of efficiency of photovoltaic solar cell.

  12. Quantum breathers in lithium tantalate ferroelectrics

    NASA Astrophysics Data System (ADS)

    Biswas, Arindam; Adhikar, Sutapa; Choudhary, Kamal; Basu, Reshmi; Bandyopadhyay, A. K.; Bhattacharjee, A. K.; Mandal, D.

    2013-08-01

    Lithium tantalate is technologically one of the most important ferroelectric materials with a low poling field that has several applications in the field of photonics and memory switching devices. In a Hamiltonian system, such as dipolar system, the polarization behavior of such ferroelectrics can be well-modeled by Klein-Gordon (K-G) equation. Due to strong localization coupled with discreteness in a nonlinear K-G lattice, there is a formation of breathers and multi-breathers that manifest in the localization peaks across the domains in polarization-space-time plot. Due to the presence of nonlinearity and also impurities (as antisite tantalum defects) in the structure, dissipative effects are observed and hence dissipative breathers are studied here. To probe the quantum states related to discrete breathers, the same K-G lattice is quantized to give rise to quantum breathers (QBs) that are explained by a periodic boundary condition. The gap between the localized and delocalized phonon-band is a function of impurity content that is again related to the effect of pinning of domains due to antisite tantalum defects in the system, i.e., a point of easier switching within the limited amount of data on poling field, which is related to Landau coefficient (read, nonlinearity). Secondly, in a non-periodic boundary condition, the temporal evolution of quanta shows interesting behavior in terms of `critical' time of redistribution of quanta that is proportional to QB's lifetime in femtosecond having a possibility for THz applications. Hence, the importance of both the methods for characterizing quantum breathers is shown in these perspectives.

  13. Using Semantic Web Technologies for Cohort Identification from Electronic Health Records for Clinical Research

    PubMed Central

    Pathak, Jyotishman; Kiefer, Richard C.; Chute, Christopher G.

    2012-01-01

    The ability to conduct genome-wide association studies (GWAS) has enabled new exploration of how genetic variations contribute to health and disease etiology. One of the key requirements to perform GWAS is the identification of subject cohorts with accurate classification of disease phenotypes. In this work, we study how emerging Semantic Web technologies can be applied in conjunction with clinical data stored in electronic health records (EHRs) to accurately identify subjects with specific diseases for inclusion in cohort studies. In particular, we demonstrate the role of using Resource Description Framework (RDF) for representing EHR data and enabling federated querying and inferencing via standardized Web protocols for identifying subjects with Diabetes Mellitus. Our study highlights the potential of using Web-scale data federation approaches to execute complex queries. PMID:22779040

  14. The "epic" challenge of optimizing antimicrobial stewardship: the role of electronic medical records and technology.

    PubMed

    Kullar, Ravina; Goff, Debra A; Schulz, Lucas T; Fox, Barry C; Rose, Warren E

    2013-10-01

    Antimicrobial stewardship programs (ASPs) are established means for institutions to improve patient outcomes while reducing the emergence of resistant bacteria. With the increased adoption and evolution of electronic medical records (EMRs), there is a need to assimilate the tools of ASPs into EMRs, using decision support and feedback. Third-party software vendors provide the mainstay for integration of individual institutional EMR and ASP efforts. Epic is the leading implementer of EMR technology in the United States. A collaboration of physicians and pharmacists are working closely with Epic to provide a more comprehensive platform of ASP tools that may be institutionally individualized. We review the historical relationship between ASPs and the EMR, cite examples of Epic stewardship tools from 3 academic medical centers' ASPs, discuss limitations of these Epic tools, and conclude with the current process in evolution to integrate ASP tools and decision support capacities directly into Epic's EMR.

  15. Novel Acoustic Technology for Studying Free-Ranging Shark Social Behaviour by Recording Individuals' Interactions

    PubMed Central

    Guttridge, Tristan L.; Gruber, Samuel H.; Krause, Jens; Sims, David W.

    2010-01-01

    Group behaviours are widespread among fish but comparatively little is known about the interactions between free-ranging individuals and how these might change across different spatio-temporal scales. This is largely due to the difficulty of observing wild fish groups directly underwater over long enough time periods to quantify group structure and individual associations. Here we describe the use of a novel technology, an animal-borne acoustic proximity receiver that records close-spatial associations between free-ranging fish by detection of acoustic signals emitted from transmitters on other individuals. Validation trials, held within enclosures in the natural environment, on juvenile lemon sharks Negaprion brevirostris fitted with external receivers and transmitters, showed receivers logged interactions between individuals regularly when sharks were within 4 m (∼4 body lengths) of each other, but rarely when at 10 m distance. A field trial lasting 17 days with 5 juvenile lemon sharks implanted with proximity receivers showed one receiver successfully recorded association data, demonstrating this shark associated with 9 other juvenile lemon sharks on 128 occasions. This study describes the use of acoustic underwater proximity receivers to quantify interactions among wild sharks, setting the scene for new advances in understanding the social behaviours of marine animals. PMID:20174465

  16. Underwater reflectance transformation imaging: a technology for in situ underwater cultural heritage object-level recording

    NASA Astrophysics Data System (ADS)

    Selmo, David; Sturt, Fraser; Miles, James; Basford, Philip; Malzbender, Tom; Martinez, Kirk; Thompson, Charlie; Earl, Graeme; Bevan, George

    2017-01-01

    There is an increasing demand for high-resolution recording of in situ underwater cultural heritage. Reflectance transformation imaging (RTI) has a proven track record in terrestrial contexts for acquiring high-resolution diagnostic data at small scales. The research presented here documents the first adaptation of RTI protocols to the subaquatic environment, with a scuba-deployable method designed around affordable off-the-shelf technologies. Underwater RTI (URTI) was used to capture detail from historic shipwrecks in both the Solent and the western Mediterranean. Results show that URTI can capture submillimeter levels of qualitative diagnostic detail from in situ archaeological material. In addition, this paper presents the results of experiments to explore the impact of turbidity on URTI. For this purpose, a prototype fixed-lighting semisubmersible RTI photography dome was constructed to allow collection of data under controlled conditions. The signal-to-noise data generated reveals that the RGB channels of underwater digital images captured in progressive turbidity degraded faster than URTI object geometry calculated from them. URTI is shown to be capable of providing analytically useful object-level detail in conditions that would render ordinary underwater photography of limited use.

  17. Digital magnetic recording systems utilizing magnetoresistive (MR) playback technology: Theoretical studies

    NASA Astrophysics Data System (ADS)

    Champion, Eric Justin

    1997-11-01

    The use of magnetoresistive playback technology in high density magnetic recording systems poses special challenges for the hard drive designer. The MR sensor is an intrinsically nonlinear device which must be biased into a region of linear response with respect to the external field. Additional magnetic structures are required to stabilize the sensor against domain formation. These structures result in complicated magnetization processes during the playback of recorded information. The spatial variation of the MR head replay voltage is complicated and has asymmetries due to the magnetic structure of the device. These issues require sophisticated modeling to properly characterize the system performance. This dissertation presents studies of several key problems involved with integrating MR heads into hard disk drives. Models of varying levels of sophistication have been developed for this work. These range from simple linear reciprocity analyses to large scale numerical energy minimization techniques. The spatial variation of the MR playback voltage is studied as a function of the system geometry using a linear theory. The response is found to depend strongly on both the head and medium parameters. Instabilities are investigated using a large scale numerical model for a particular head fabrication geometry. The interface between the stabilizing magnetic structures and the head material produces repeatable hysteretic effects in the voltage response. The saturation of MR heads is characterized using numerical modeling. This is important for estimates of the error rate in the drive. The results show that the saturation characteristics can vary significantly between different head designs and as a function of the spatial position of the device. The issues involved with the use of MR heads as positioning sensors are also addressed. The servo system stability is a strong function of the recording parameters and the head spatial symmetry. Optimization of the servo system

  18. Does Wearable Medical Technology With Video Recording Capability Add Value to On-Call Surgical Evaluations?

    PubMed

    Gupta, Sameer; Boehme, Jacqueline; Manser, Kelly; Dewar, Jannine; Miller, Amie; Siddiqui, Gina; Schwaitzberg, Steven D

    2016-10-01

    Background Google Glass has been used in a variety of medical settings with promising results. We explored the use and potential value of an asynchronous, near-real time protocol-which avoids transmission issues associated with real-time applications-for recording, uploading, and viewing of high-definition (HD) visual media in the emergency department (ED) to facilitate remote surgical consults. Study Design First-responder physician assistants captured pertinent aspects of the physical examination and diagnostic imaging using Google Glass' HD video or high-resolution photographs. This visual media were then securely uploaded to the study website. The surgical consultation then proceeded over the phone in the usual fashion and a clinical decision was made. The surgeon then accessed the study website to review the uploaded video. This was followed by a questionnaire regarding how the additional data impacted the consultation. Results The management plan changed in 24% (11) of cases after surgeons viewed the video. Five of these plans involved decision making regarding operative intervention. Although surgeons were generally confident in their initial management plan, confidence scores increased further in 44% (20) of cases. In addition, we surveyed 276 ED patients on their opinions regarding concerning the practice of health care providers wearing and using recording devices in the ED. The survey results revealed that the majority of patients are amenable to the addition of wearable technology with video functionality to their care. Conclusions This study demonstrates the potential value of a medically dedicated, hands-free, HD recording device with internet connectivity in facilitating remote surgical consultation.

  19. Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Ahmad, M. M.; Kotru, P. N.

    2016-04-01

    Gel-grown single crystals of [Pr2(C3H2O4)3(H2O)6] exhibit remarkably flat habit faces, the most predominant being {110}. High-resolution x-ray diffraction analysis showed that the crystals are free from structural grain boundaries, which is the key requirement for single crystals for use in the microelectronics industry to serve as low-dielectric-constant ferroelectric material. The dielectric behavior recorded on {110} planes of single crystals shows that the crystal is ferroelectric with transition temperature T c = 135°C, which differs from the Curie-Weiss temperature T 0 by 2°C (T 0 < T c). Material in pellet form is shown to exhibit slightly different dielectric behavior. Polarization versus electric field confirms the ferroelectric behavior of the material. The dielectric behavior is also supported by the results of thermal studies, viz. thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The magnetic susceptibility and magnetic moment are calculated to be 30.045 × 10-6 emu and 3.092 BM, respectively.

  20. Predictive modelling of ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Velev, Julian P.; Burton, John D.; Zhuravlev, Mikhail Ye; Tsymbal, Evgeny Y.

    2016-05-01

    Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.

  1. Using Technology to Improve Cancer Care: Social Media, Wearables, and Electronic Health Records.

    PubMed

    Fisch, Michael J; Chung, Arlene E; Accordino, Melissa K

    2016-01-01

    Digital engagement has become pervasive in the delivery of cancer care. Internet- and cellular phone-based tools and systems are allowing large groups of people to engage with each other and share information. Health systems and individual health professionals are adapting to this revolution in consumer and patient behavior by developing ways to incorporate the benefits of technology for the purpose of improving the quality of medical care. One example is the use of social media platforms by oncologists to foster interaction with each other and to participate with the lay public in dialogue about science, medicine, and cancer care. In addition, consumer devices and sensors (wearables) have provided a new, growing dimension of digital engagement and another layer of patient-generated health data to foster better care and research. Finally, electronic health records have become the new standard for oncology care delivery, bringing new opportunities to measure quality in real time and follow practice patterns, as well as new challenges as providers and patients seek ways to integrate this technology along with other forms of digital engagement to produce more satisfaction in the process of care along with measurably better outcomes.

  2. Applying semantic web technologies for phenome-wide scan using an electronic health record linked Biobank

    PubMed Central

    2012-01-01

    Background The ability to conduct genome-wide association studies (GWAS) has enabled new exploration of how genetic variations contribute to health and disease etiology. However, historically GWAS have been limited by inadequate sample size due to associated costs for genotyping and phenotyping of study subjects. This has prompted several academic medical centers to form “biobanks” where biospecimens linked to personal health information, typically in electronic health records (EHRs), are collected and stored on a large number of subjects. This provides tremendous opportunities to discover novel genotype-phenotype associations and foster hypotheses generation. Results In this work, we study how emerging Semantic Web technologies can be applied in conjunction with clinical and genotype data stored at the Mayo Clinic Biobank to mine the phenotype data for genetic associations. In particular, we demonstrate the role of using Resource Description Framework (RDF) for representing EHR diagnoses and procedure data, and enable federated querying via standardized Web protocols to identify subjects genotyped for Type 2 Diabetes and Hypothyroidism to discover gene-disease associations. Our study highlights the potential of Web-scale data federation techniques to execute complex queries. Conclusions This study demonstrates how Semantic Web technologies can be applied in conjunction with clinical data stored in EHRs to accurately identify subjects with specific diseases and phenotypes, and identify genotype-phenotype associations. PMID:23244446

  3. Anomalously rotary polarization discovered in homochiral organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Li, Peng-Fei; Tang, Yuan-Yuan; Wang, Zhong-Xia; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-11-01

    Molecular ferroelectrics are currently an active research topic in the field of ferroelectric materials. As complements or alternatives of conventional inorganic ferroelectrics, they have been designed to realize various novel properties, ranging from multiferroicity and semiconductive ferroelectricity to ferroelectric photovoltaics and ferroelectric luminescence. The stabilizing of ferroelectricity in various systems is owing to the flexible tailorability of the organic components. Here we describe the construction of optically active molecular ferroelectrics by introducing homochiral molecules as polar groups. We find that the ferroelectricity in (R)-(-)-3-hydroxlyquinuclidinium halides is due to the alignment of the homochiral molecules. We observe that both the specific optical rotation and rotatory direction change upon paraelectric-ferroelectric phase transitions, due to the existence of two origins from the molecular chirality and spatial arrangement, whose contributions vary upon the transitions. The optical rotation switching effect may find applications in electro-optical elements.

  4. Crack instability of ferroelectric solids under alternative electric loading

    NASA Astrophysics Data System (ADS)

    Chen, Hao-Sen; Wang, He-Ling; Pei, Yong-Mao; Wei, Yu-Jie; Liu, Bin; Fang, Dai-Ning

    2015-08-01

    The low fracture toughness of the widely used piezoelectric and ferroelectric materials in technological applications raises a big concern about their durability and safety. Up to now, the mechanisms of electric-field induced fatigue crack growth in those materials are not fully understood. Here we report experimental observations that alternative electric loading at high frequency or large amplitude gives rise to dramatic temperature rise at the crack tip of a ferroelectric solid. The temperature rise subsequently lowers the energy barrier of materials for domain switch in the vicinity of the crack tip, increases the stress intensity factor and leads to unstable crack propagation finally. In contrast, at low frequency or small amplitude, crack tip temperature increases mildly and saturates quickly, no crack growth is observed. Together with our theoretical analysis on the non-linear heat transfer at the crack tip, we constructed a safe operating area curve with respect to the frequency and amplitude of the electric field, and validated the safety map by experiments. The revealed mechanisms about how electro-thermal-mechanical coupling influences fracture can be directly used to guide the design and safety assessment of piezoelectric and ferroelectric devices.

  5. Novel Ferroelectric CMOS Circuits as a Nonvolatile Logic

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Horiuchi, T.; Li, Q.-H.; Wang, S.; Yun, K. Y.; Sakai, S.

    2008-03-01

    We propose a novel and promising nonvolatile-logic circuit constructed by p channel type (Pch) and n channel type (Nch) ferroelectric gate field effect transistors (FeFETs), which we named a ferroelectric CMOS (FeCMOS) circuit. The circuit works as both logic and memory. We fabricated a NOT logic FeCMOS device which have Pt metal gates and gate oxides of ferroelectric SrBi2Ta2O9 (SBT) and high-k HfAlO on Si. Key technology was adjusting threshold voltages of the FeFETs as well as preparing those of high quality. We demonstrate basic operations of the NOT-logic response, memory writing, holding and non-destructive reading. The memory writing is done by amplifying the input node voltage to a higher level when the node was logically high and to a lower one when it was logically low just before the writing operation. The data retention was also measured. The retained high and low voltages were almost unchanged for 1.2 days. The idea of this FeCMOS will enhance flexibility of circuit designing by merging logic and memory functions. This work was partially supported by NEDO.

  6. Thin layer composite unimorph ferroelectric driver and sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    2004-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  7. Calligraphic Poling of Ferroelectric Material

    NASA Technical Reports Server (NTRS)

    Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

    2007-01-01

    Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

  8. High photovoltages in ferroelectric ceramics

    NASA Technical Reports Server (NTRS)

    Brody, P. S.

    1976-01-01

    The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

  9. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  10. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  11. A technology prototype system for rating therapist empathy from audio recordings in addiction counseling

    PubMed Central

    Xiao, Bo; Huang, Chewei; Imel, Zac E.; Atkins, David C.; Georgiou, Panayiotis; Narayanan, Shrikanth S.

    2016-01-01

    Scaling up psychotherapy services such as for addiction counseling is a critical societal need. One challenge is ensuring quality of therapy, due to the heavy cost of manual observational assessment. This work proposes a speech technology-based system to automate the assessment of therapist empathy—a key therapy quality index—from audio recordings of the psychotherapy interactions. We designed a speech processing system that includes voice activity detection and diarization modules, and an automatic speech recognizer plus a speaker role matching module to extract the therapist's language cues. We employed Maximum Entropy models, Maximum Likelihood language models, and a Lattice Rescoring method to characterize high vs. low empathic language. We estimated therapy-session level empathy codes using utterance level evidence obtained from these models. Our experiments showed that the fully automated system achieved a correlation of 0.643 between expert annotated empathy codes and machine-derived estimations, and an accuracy of 81% in classifying high vs. low empathy, in comparison to a 0.721 correlation and 86% accuracy in the oracle setting using manual transcripts. The results show that the system provides useful information that can contribute to automatic quality insurance and therapist training. PMID:28286867

  12. Automation of Presentation Record Production Based on Rich-Media Technology Using SNT Petri Nets Theory

    PubMed Central

    Martiník, Ivo

    2015-01-01

    Rich-media describes a broad range of digital interactive media that is increasingly used in the Internet and also in the support of education. Last year, a special pilot audiovisual lecture room was built as a part of the MERLINGO (MEdia-rich Repository of LearnING Objects) project solution. It contains all the elements of the modern lecture room determined for the implementation of presentation recordings based on the rich-media technologies and their publication online or on-demand featuring the access of all its elements in the automated mode including automatic editing. Property-preserving Petri net process algebras (PPPA) were designed for the specification and verification of the Petri net processes. PPPA does not need to verify the composition of the Petri net processes because all their algebraic operators preserve the specified set of the properties. These original PPPA are significantly generalized for the newly introduced class of the SNT Petri process and agent nets in this paper. The PLACE-SUBST and ASYNC-PROC algebraic operators are defined for this class of Petri nets and their chosen properties are proved. The SNT Petri process and agent nets theory were significantly applied at the design, verification, and implementation of the programming system ensuring the pilot audiovisual lecture room functionality. PMID:26258164

  13. Automation of Presentation Record Production Based on Rich-Media Technology Using SNT Petri Nets Theory.

    PubMed

    Martiník, Ivo

    2015-01-01

    Rich-media describes a broad range of digital interactive media that is increasingly used in the Internet and also in the support of education. Last year, a special pilot audiovisual lecture room was built as a part of the MERLINGO (MEdia-rich Repository of LearnING Objects) project solution. It contains all the elements of the modern lecture room determined for the implementation of presentation recordings based on the rich-media technologies and their publication online or on-demand featuring the access of all its elements in the automated mode including automatic editing. Property-preserving Petri net process algebras (PPPA) were designed for the specification and verification of the Petri net processes. PPPA does not need to verify the composition of the Petri net processes because all their algebraic operators preserve the specified set of the properties. These original PPPA are significantly generalized for the newly introduced class of the SNT Petri process and agent nets in this paper. The PLACE-SUBST and ASYNC-PROC algebraic operators are defined for this class of Petri nets and their chosen properties are proved. The SNT Petri process and agent nets theory were significantly applied at the design, verification, and implementation of the programming system ensuring the pilot audiovisual lecture room functionality.

  14. A technology prototype system for rating therapist empathy from audio recordings in addiction counseling.

    PubMed

    Xiao, Bo; Huang, Chewei; Imel, Zac E; Atkins, David C; Georgiou, Panayiotis; Narayanan, Shrikanth S

    2016-04-01

    Scaling up psychotherapy services such as for addiction counseling is a critical societal need. One challenge is ensuring quality of therapy, due to the heavy cost of manual observational assessment. This work proposes a speech technology-based system to automate the assessment of therapist empathy-a key therapy quality index-from audio recordings of the psychotherapy interactions. We designed a speech processing system that includes voice activity detection and diarization modules, and an automatic speech recognizer plus a speaker role matching module to extract the therapist's language cues. We employed Maximum Entropy models, Maximum Likelihood language models, and a Lattice Rescoring method to characterize high vs. low empathic language. We estimated therapy-session level empathy codes using utterance level evidence obtained from these models. Our experiments showed that the fully automated system achieved a correlation of 0.643 between expert annotated empathy codes and machine-derived estimations, and an accuracy of 81% in classifying high vs. low empathy, in comparison to a 0.721 correlation and 86% accuracy in the oracle setting using manual transcripts. The results show that the system provides useful information that can contribute to automatic quality insurance and therapist training.

  15. Structural Consequences of Ferroelectric Nanolithography

    SciTech Connect

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  16. Photorefractive effect in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeo; Naka, Yumiko

    2014-03-01

    In this paper, we review recent progress of research on the photorefractive effect of ferroelectric liquid crystals. The photorefractive effect is a phenomenon that forms a dynamic hologram in a material. The interference of two laser beams in a photorefractive material establishes a refractive index grating. This phenomenon is applicable to a wide range of devices related to diffraction optics including 3D displays, optical amplification, optical tomography, novelty filters, and phase conjugate wave generators. Ferroelectric liquid crystals are considered as a candidate for practical photorefractive materials. A refractive index grating formation time of 8-10 ms and a large gain coefficient are easily obtained in photorefractive ferroelectric liquid crystals.

  17. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    SciTech Connect

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  18. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  19. Room temperature ferroelectricity in one-dimensional single chain molecular magnets [{M(Δ)M(Λ)}(ox)2(phen)2]n (M = Fe and Mn)

    NASA Astrophysics Data System (ADS)

    Bhatt, Pramod; Mukadam, M. D.; Meena, S. S.; Mishra, S. K.; Mittal, R.; Sastry, P. U.; Mandal, B. P.; Yusuf, S. M.

    2017-03-01

    The ferroelectric materials are mainly focused on pure inorganic oxides; however, the organic molecule based materials have recently attracted great attention because of their multifunctional properties. The mixing of oxalate and phenanthroline ligands with metal ions (Fe or Mn) at room temperature followed by hydrothermal treatment results in the formation of one-dimensional single chain molecular magnets which exhibit room temperature dielectric and ferroelectric behavior. The compounds are chiral in nature, and exhibit a ferroelectric behavior, attributed to the polar point group C2, in which they crystallized. The compounds are also associated with a dielectric loss and thus a relaxation process. The observed electric dipole moment, essential for a ferroelectricity, has been understood quantitatively in terms of lattice distortions at two different lattice sites within the crystal structure. The studied single chain molecular magnetic materials with room temperature ferroelectric and dielectric properties could be of great technological importance in non-volatile memory elements, and high-performance insulators.

  20. Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

    2000-01-01

    The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

  1. Validating the Technology Acceptance Model in the Context of the Laboratory Information System-Electronic Health Record Interface System

    ERIC Educational Resources Information Center

    Aquino, Cesar A.

    2014-01-01

    This study represents a research validating the efficacy of Davis' Technology Acceptance Model (TAM) by pairing it with the Organizational Change Readiness Theory (OCRT) to develop another extension to the TAM, using the medical Laboratory Information Systems (LIS)--Electronic Health Records (EHR) interface as the medium. The TAM posits that it is…

  2. Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

    2016-10-01

    Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

  3. Colossal Room-Temperature Electrocaloric Effect in Ferroelectric Polymer Nanocomposites Using Nanostructured Barium Strontium Titanates.

    PubMed

    Zhang, Guangzu; Zhang, Xiaoshan; Yang, Tiannan; Li, Qi; Chen, Long-Qing; Jiang, Shenglin; Wang, Qing

    2015-07-28

    The electrocaloric effect (ECE) refers to conversion of thermal to electrical energy of polarizable materials and could form the basis for the next-generation refrigeration and power technologies that are highly efficient and environmentally friendly. Ferroelectric materials such as ceramic and polymer films exhibit large ECEs, but each of these monolithic materials has its own limitations for practical cooling applications. In this work, nanosized barium strontium titanates with systematically varied morphologies have been prepared to form polymer nanocomposites with the ferroelectric polymer matrix. The solution-processed polymer nanocomposites exhibit an extraordinary room-temperature ECE via the synergistic combination of the high breakdown strength of a ferroelectric polymer matrix and the large change of polarization with temperature of ceramic nanofillers. It is found that a sizable ECE can be generated under both modest and high electric fields, and further enhanced greatly by tailoring the morphology of the ferroelectric nanofillers such as increasing the aspect ratio of the nanoinclusions. The effect of the geometry of the nanofillers on the dielectric permittivity, polarization, breakdown strength, ECE and crystallinity of the ferroelectric polymer has been systematically investigated. Simulations based on the phase-field model have been carried out to substantiate the experimental results. With the remarkable cooling energy density and refrigerant capacity, the polymer nanocomposites are promising for solid-state cooling applications.

  4. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  5. The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

    NASA Technical Reports Server (NTRS)

    Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

    1979-01-01

    The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

  6. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    PubMed Central

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-01-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

  7. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  8. Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT

    PubMed Central

    Evans, D.M.; Schilling, A.; Kumar, Ashok; Sanchez, D.; Ortega, N.; Arredondo, M.; Katiyar, R.S.; Gregg, J.M.; Scott, J.F.

    2013-01-01

    Single-phase magnetoelectric multiferroics are ferroelectric materials that display some form of magnetism. In addition, magnetic and ferroelectric order parameters are not independent of one another. Thus, the application of either an electric or magnetic field simultaneously alters both the electrical dipole configuration and the magnetic state of the material. The technological possibilities that could arise from magnetoelectric multiferroics are considerable and a range of functional devices has already been envisioned. Realising these devices, however, requires coupling effects to be significant and to occur at room temperature. Although such characteristics can be created in piezoelectric-magnetostrictive composites, to date they have only been weakly evident in single-phase multiferroics. Here in a newly discovered room temperature multiferroic, we demonstrate significant room temperature coupling by monitoring changes in ferroelectric domain patterns induced by magnetic fields. An order of magnitude estimate of the effective coupling coefficient suggests a value of ~1 × 10−7 sm−1. PMID:23443562

  9. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei V.; Rodriguez, Brian J.; Jesse, Stephen; Karapetian, Edgar; Mirman, Boris; Eliseev, Eugene A.; Morozovska, Anna N.

    2007-08-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  10. Magnetically induced ferroelectricity in TbMnO(3): inverse Goodenough-Kanamori interaction.

    PubMed

    Yamauchi, Kunihiko; Picozzi, Silvia

    2009-02-11

    Improper ferroelectricity in magnets, as induced by non-centrosymmetric spin-, charge- or orbital-ordering, is a branch of the field of multiferroics having fascinating physics and a potentially important technological outcome. We focus here on ferroelectricity in orthorhombic TbMnO(3), where the magnetic field along the a-axis produces a polar collinear spin-arrangement with a rather large in-plane electric polarization. The mechanism, similar to that occurring in orthorhombic HoMnO(3) in the AFM-E phase, is efficiently driven by a large modification of the structural properties (such as MnO bond-lengths and Mn-O-Mn bond-angles) to favor e(g) electron hopping between Mn with parallel spins. A similar mechanism where the t(2g) states are involved is examined through a hypothetical collinear spin-structure, resulting in a weaker out-of-plane ferroelectric polarization.

  11. Magnetically induced ferroelectricity in TbMnO3: inverse Goodenough-Kanamori interaction

    NASA Astrophysics Data System (ADS)

    Yamauchi, Kunihiko; Picozzi, Silvia

    2009-02-01

    Improper ferroelectricity in magnets, as induced by non-centrosymmetric spin-, charge- or orbital-ordering, is a branch of the field of multiferroics having fascinating physics and a potentially important technological outcome. We focus here on ferroelectricity in orthorhombic TbMnO3, where the magnetic field along the a-axis produces a polar collinear spin-arrangement with a rather large in-plane electric polarization. The mechanism, similar to that occurring in orthorhombic HoMnO3 in the AFM-E phase, is efficiently driven by a large modification of the structural properties (such as MnO bond-lengths and Mn-O-Mn bond-angles) to favor eg electron hopping between Mn with parallel spins. A similar mechanism where the t2g states are involved is examined through a hypothetical collinear spin-structure, resulting in a weaker out-of-plane ferroelectric polarization.

  12. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

    PubMed

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10(5). Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  13. Observation of ferroelectric phase and large spontaneous electric polarization in organic salt of diisopropylammonium iodide

    NASA Astrophysics Data System (ADS)

    Saripalli, Ravi K.; Swain, Diptikanta; Prasad, Siva; Nhalil, Hariharan; Bhat, Handady L.; Guru Row, Tayur N.; Elizabeth, Suja

    2017-03-01

    In this manuscript, we explore diisopropylammonium iodide (DPI) for its ferroelectric properties and phase transitions. DPI showed two phase transitions which were identified by differential scanning calorimetry and dielectric and nonlinear optical measurements. From detailed structural studies it was found that the first transition at 369 K is from orthorhombic P212121 to monoclinic P21. The polar P21 phase is ferroelectric as evidenced by the pyroelectric data and has a very high value of spontaneous polarization (Ps = 33 μC cm-2), which is probably the highest among other reported bulk organic ferroelectrics. The second transition at 415 K is identified as polar monoclinic P21 space group to non-polar monoclinic P21/m. Thus, DPI has a high Curie temperature of 415 K. The large spontaneous polarization and high Curie temperature make DPI technologically important.

  14. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    SciTech Connect

    Kalinin, Sergei V; Rodriguez, Brian J; Jesse, Stephen; Karapetian, Edgar; Mirman, B; Eliseev, E. A.; Morozovska, A. N.

    2007-01-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  15. Exploring Healthcare Consumer Acceptance of Personal Health Information Management Technology through Personal Health Record Systems

    ERIC Educational Resources Information Center

    Wu, Huijuan

    2013-01-01

    Healthcare technologies are evolving from a practitioner-centric model to a patient-centric model due to the increasing need for technology that directly serves healthcare consumers, including healthy people and patients. Personal health information management (PHIM) technology is one of the technologies designed to enhance an individual's ability…

  16. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  17. Ferroelectricity in yttrium-doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Müller, J.; Schröder, U.; Böscke, T. S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.

    2011-12-01

    Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO1.5 in HfO2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO1.5 admixture the remanent polarization peaked at 24 μC/cm2 with a coercive field of about 1.2 MV/cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO2 implies high scaling potential for future, ferroelectric memories.

  18. Negative capacitance in a ferroelectric capacitor.

    PubMed

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  19. Using Health Information Technology to Foster Engagement: Patients' Experiences with an Active Patient Health Record.

    PubMed

    Rief, John J; Hamm, Megan E; Zickmund, Susan L; Nikolajski, Cara; Lesky, Dan; Hess, Rachel; Fischer, Gary S; Weimer, Melissa; Clark, Sunday; Zieth, Caroline; Roberts, Mark S

    2017-03-01

    Personal health records (PHRs) typically employ "passive" communication strategies, such as non-personalized medical text, rather than direct patient engagement in care. Currently there is a call for more active PHRs that directly engage patients in an effort to improve their health by offering elements such as personalized medical information, health coaches, and secure messaging with primary care providers. As part of a randomized clinical trial comparing "passive" with "active" PHRs, we explore patients' experiences with using an "active" PHR known as HealthTrak. The "passive" elements of this PHR included problem lists, medication lists, information about patient allergies and immunizations, medical and surgical histories, lab test results, health reminders, and secure messaging. The active arm included all of these elements and added personalized alerts delivered through the secure messaging platform to patients for services coming due based on various demographic features (including age and sex) and chronic medical conditions. Our participants were part of the larger clinical trial and were eligible if they had been randomized to the active PHR arm, one that included regular personalized alerts. We conducted focus group discussions on the benefits of this active PHR for patients who are at risk for cardiovascular disease. Forty-one patients agreed to participate and were organized into five separate focus group sessions. Three main themes emerged from the qualitatively analyzed focus groups: participants reported that the active PHR promoted better communication with providers; enabled them to more effectively partner with their providers; and helped them become more proactive about tracking their health information. In conclusion, patients reported improved communication, partnership with their providers, and a sense of self-management, thus adding insights for PHR designers hoping to address low adoption rates and other patient barriers to the development

  20. Electrocaloric cooling based on relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Suchaneck, Gunnar; Gerlach, Gerald

    2015-03-01

    In this work, we consider the electrocaloric effect in relaxor ferroelectrics above the temperature of the dielectric constant maximum. For the purpose of modelling, a modified Curie--Weiss law was adapted to approximate the complex physics of relaxors. The requirements to electrocaloric materials derived on this basis are fulfilled by relaxor single crystals, ceramics and high-quality thin films. Relaxor ferroelectrics exhibit a suitable electrocaloric performance starting at applied electric fields of about 25 V/μm.

  1. Magnetic Recording.

    ERIC Educational Resources Information Center

    Lowman, Charles E.

    A guide to the technology of magnetic recorders used in such fields as audio recording, broadcast and closed-circuit television, instrumentation recording, and computer data systems is presented. Included are discussions of applications, advantages, and limitations of magnetic recording, its basic principles and theory of operation, and its…

  2. Enhancing interfacial magnetization with a ferroelectric

    DOE PAGES

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; ...

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can bemore » greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.« less

  3. Three perimeter effects in ferroelectric nanostructures

    NASA Astrophysics Data System (ADS)

    Ruediger, Andreas; Peter, Frank; Waser, Rainer

    2006-03-01

    As the lateral size of ferroelectric nanoislands is now well below 50 nm, the question of size effects becomes increasingly relevant. Three independent techniques provided data of pronounced ferroelectric features along the perimeter: impedance spectroscopy [1], piezoelectric force microscopy [2] and pyroelectric current sensing [3]. However, as we can show, all three observations are related to the measurement technique that interferes with the lateral confinement and still there is no direct evidence of a lateral size effect in ferroelectric nanostructures. We discuss some scenarios of further downscaling and possible consequences. [1]M.Dawber, D.J. Jung, J.F. Scott, “Perimeter effect in very small ferroelectrics“,Appl. Phys. Lett. 82, 436 (2003) [2 ]F. Peter, A. Ruediger, R. Dittmann, R. Waser, K. Szot, B. Reichenberg, K. Prume, “Analysis of shape effects on the piezoresponse in ferroelectric nanograins with and without adsorbates”, Applied Physics Letters, 87, 082901 (2005) [3] B.W. Peterson, S. Ducharme, V.M. Fridkin, “Mapping surface Polarization in thin films of the ferroelectric polymer P(VDF-TrFE)”,Ferroelectrics, 304, 51 (2004)

  4. Enhancing interfacial magnetization with a ferroelectric

    NASA Astrophysics Data System (ADS)

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-01

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZ r0.2T i0.8O3/L a0.8S r0.2Mn O3(PZT /LSMO ) ] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0 μB/f .u . , a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  5. Multiscale dynamics in relaxor ferroelectrics

    SciTech Connect

    Toulouse, J.; Cai, L; Pattnaik, R. K.; Boatner, Lynn A

    2014-01-01

    The multiscale dynamics of complex oxides is illustrated by pairs of mechanical resonances that are excited in the relaxor ferroelectric K1 xLixTaO3 (KLT). These macroscopic resonances are shown to originate in the collective dynamics of piezoelectric polar nanodomains (PND) interacting with the surrounding lattice. Their characteristic Fano lineshapes and rapid evolution with temperature reveal the coherent interplay between the piezoelectric oscillations and orientational relaxations of the PNDs at higher temperature and the contribution of heterophase oscillations near the phase transition. A theoretical model is presented, that describes the evolution of the resonances over the entire temperature range. Similar resonances are observed in other relaxors and must therefore be a common characteristics of these systems.

  6. Magnetic control of ferroelectric interfaces

    NASA Astrophysics Data System (ADS)

    Dussan, S.; Kumar, A.; Katiyar, R. S.; Priya, S.; Scott, J. F.

    2011-05-01

    We report the strong magnetic field dependence of ferroelectric PbZr0.52Ti0.48O3 (PZT) films on half-metallic oxide La0.67Sr0.33MnO3 (LSMO) electrodes. As the field H is increased, the hysteresis loop first broadens (becomes lossy) and then disappears at approximately H = 0.34 T and ambient temperatures. The data are compared with the theories of Pirč et al (2009 Phys. Rev. B 79 214114), Parish and Littlewood (2008 Phys. Rev. Lett. 101 166602) and Catalan (2006 Appl. Phys. Lett. 88 102902). The results are interpreted as due not to magnetocapacitance but to the sharp negative magnetoresistance in LSMO at low magnetic fields (Hwang et al 1996 Phys. Rev. Lett. 77 2041), which causes a dramatic increase in leakage current through the PZT.

  7. Application of video recording technology to improve husbandry and reproduction in the carmine bee-eater (Merops n. nubicus).

    PubMed

    Ferrie, Gina M; Sky, Christy; Schutz, Paul J; Quinones, Glorieli; Breeding, Shawnlei; Plasse, Chelle; Leighty, Katherine A; Bettinger, Tammie L

    2016-01-01

    Incorporating technology with research is becoming increasingly important to enhance animal welfare in zoological settings. Video technology is used in the management of avian populations to facilitate efficient information collection on aspects of avian reproduction that are impractical or impossible to obtain through direct observation. Disney's Animal Kingdom(®) maintains a successful breeding colony of Northern carmine bee-eaters. This African species is a cavity nester, making their nesting behavior difficult to study and manage in an ex situ setting. After initial research focused on developing a suitable nesting environment, our goal was to continue developing methods to improve reproductive success and increase likelihood of chicks fledging. We installed infrared bullet cameras in five nest boxes and connected them to a digital video recording system, with data recorded continuously through the breeding season. We then scored and summarized nesting behaviors. Using remote video methods of observation provided much insight into the behavior of the birds in the colony's nest boxes. We observed aggression between birds during the egg-laying period, and therefore immediately removed all of the eggs for artificial incubation which completely eliminated egg breakage. We also used observations of adult feeding behavior to refine chick hand-rearing diet and practices. Although many video recording configurations have been summarized and evaluated in various reviews, we found success with the digital video recorder and infrared cameras described here. Applying emerging technologies to cavity nesting avian species is a necessary addition to improving management in and sustainability of zoo avian populations.

  8. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    SciTech Connect

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  9. Synthesis, deposition and characterization of ferroelectric films for electrooptic devices

    NASA Astrophysics Data System (ADS)

    Tunaboylu, Bahadir

    The use of integrable ferroelectric electro-optic thin films is a revolutionary approach in the development of high-speed, low-voltage and high-contrast ratio integrated electro-optic spatial light modulators (SLM) for free-space optoelectronic interconnects. Thin films offer improved performance over bulk ferroelectric (FE) materials because of their lower modulator capacitance and operation at high speeds with low switching energies. Integration of ferroelectric thin films with silicon technology will also impact both the uncooled infrared sensor and dynamic and nonvolatile memory technologies. Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and patassium tantalate niobate (KTN) present great potential for SLMs due to their large electro-optic (EO) effect in the bulk form. The development of thin-film SLMs require electro-optic films of high optical quality with good dielectric and EO properties. High quality thin films of PLZT and KTN were deposited using RF magnetron sputtering on r-plane sapphire substrates which offer integration capability with semiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 at the Curie temperature of 180sp°C, were achieved with remarkably low dissipation loss factor <0.04. The dielectric frequency dispersion was determined to be very small up to 1 Mhz. Also, the absorption of the light in the films was very low. A giant effective quadratic electrooptic effect was demonstrated in PLZT films. These results represent a huge leap forward for the FE-SLM technology with respect to the goal of fully integrated thin film electrooptic light modulators. Microstructural development and phase transformation kinetics in PLZT films were also analyzed for the first time and are presented here. Energy required for the formation of desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT films with larger average grain size showed higher dielectric constants and better EO

  10. Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

    NASA Astrophysics Data System (ADS)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF-TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization-electric field loop and piezoelectricity in the P(VDF-TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF-TrFE) layer.

  11. Improving the Quality of Nursing Home Care and Medical-Record Accuracy with Direct Observational Technologies

    ERIC Educational Resources Information Center

    Schnelle, John F.; Osterweil, Dan; Simmons, Sandra F.

    2005-01-01

    Nursing home medical-record documentation of daily-care occurrence may be inaccurate, and information is not documented about important quality-of-life domains. The inadequacy of medical record data creates a barrier to improving care quality, because it supports an illusion of care consistent with regulations, which reduces the motivation and…

  12. THE FERROELECTRIC AND STRUCTURAL PROPERTIES OF HAFNIUM OXIDE COMPOUNDS,

    DTIC Science & Technology

    HAFNIUM COMPOUNDS, OXIDES), (* FERROELECTRICITY , HAFNIUM COMPOUNDS), (*CRYSTAL STRUCTURE, HAFNIUM COMPOUNDS), DIELECTRIC PROPERTIES, HYSTERESIS... FERROELECTRIC MATERIALS, SOLID SOLUTIONS, X RAY DIFFRACTION, CRYSTAL LATTICES, LOW TEMPERATURE, CALCIUM COMPOUNDS, STRONTIUM COMPOUNDS, LEAD COMPOUNDS, BARIUM COMPOUNDS

  13. INVESTIGATION OF A COMPOUND REPORTED AS BOTH FERRIMAGNETIC AND FERROELECTRIC,

    DTIC Science & Technology

    FERRITES , *FERROELECTRIC CRYSTALS, MAGNETIC PROPERTIES, X RAY DIFFRACTION, IMPURITIES, FERROELECTRICITY, FERROMAGNETISM, CRYSTAL STRUCTURE...DIELECTRIC PROPERTIES, MICROSCOPY, BARIUM COMPOUNDS, SAMARIUM COMPOUNDS, NIOBIUM COMPOUNDS, TITANIUM COMPOUNDS, TITANATES, PHOTOMICROGRAPHY, CRYSTAL LATTICES, OXIDES.

  14. Foreign technology alert-bibliography: Photography and recording devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Wilkinson, G.

    1982-11-01

    A systematically organized collection of abstracts from a bibliographic data base is provided on reports relating to photographic, imaging and recording systems originating from countries outside the USA. A tailored search of the data base was performed and the output carefully categorized, edited and indexed. Subjects covered include: photographic devices and imaging systems (cameras, image carriers, holography and applications); audiovisual recording (digital, magnetic and video); date encoding, recording and storage; and satellite equipment. Each of the sections in the book is cross-referenced and there is also an author index and useful subject index based on major descriptors.

  15. Using second-order diffraction when obtaining combined holograms consisting of a rainbow hologram and a hologram recorded using dot-matrix technology

    NASA Astrophysics Data System (ADS)

    Gal'Pern, A. D.; Paramonov, A. A.; Sysoev, M. Yu.

    2006-07-01

    This paper discusses a method of combining relief-phase rainbow holograms recorded by the Benton method and holograms recorded by means of the dot-matrix technology on one medium. In doing this, two different photoresist compositions were used to record the holograms, at wavelengths 488 and 441.6 nm.

  16. Using technology to teach technology: design and evaluation of bilingual online physician education about electronic medical records.

    PubMed

    Edmonson, Sarah R; Esquivel, Adol; Mokkarala, Pallavi; Johnson, Craig W; Phelps, Cynthia L

    2005-01-01

    The "EMR Tutorial" is designed to be a bilingual online physician education environment about electronic medical records. After iterative assessment and redesign, the tutorial was tested in two groups: U.S. physicians and Mexican medical students. Split-plot ANOVA revealed significantly different pre-test scores in the two groups, significant cognitive gains for the two groups overall, and no significant difference in the gains made by the two groups. Users rated the module positively on a satisfaction questionnaire.

  17. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    SciTech Connect

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Mitoseriu, Liliana; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen

    2013-02-21

    Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  18. Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1995-01-01

    Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

  19. 2009 Mississippi Curriculum Framework: Postsecondary Health Information Technology. (Program CIP-51.0707-Medical Records Technology/Technician)

    ERIC Educational Resources Information Center

    Hoffman, Casey; Jones, Robin; McGuffee, Michelle; Scott, Nena

    2009-01-01

    As the world economy continues to evolve, businesses and industries must adopt new practices and processes in order to survive. Quality and cost control, work teams and participatory management, and an infusion of technology are transforming the way people work and do business. Employees are now expected to read, write, and communicate…

  20. Ferroelectric properties of niobium-doped strontium bismuth tantalate films

    NASA Astrophysics Data System (ADS)

    Golosov, D. A.; Zavadski, S. M.; Kolos, V. V.; Turtsevich, A. S.

    2016-01-01

    The characteristics of ferroelectric thin films of strontium bismuth tantalate (SBT) and niobium-doped strontium bismuth tantalate (SBTN) deposited by radio-frequency (RF) magnetron sputtering on Pt/TiO2/SiO2/Si substrates were investigated. For the formation of the structure of the ferroelectric material, the deposited films were subjected to a subsequent annealing at temperatures of 970-1070 K in an O2 atmosphere. The results of the X-ray diffraction analysis demonstrated that, in contrast to SBT films, in which the Aurivillius phase is formed only at annealing temperatures of 1050-1070 K, the formation of this phase in SBTN films is observed already at a temperature of 970 K. The dependences of the dielectric permittivity, remanent polarization, and coercive force of the SBT and SBTN films on the subsequent annealing conditions were determined. It was found that, upon doping of the SBT films with niobium, the remanent polarization increases by a factor of approximately three, the Curie temperature increases by 50 K, and the dielectric permittivity also increases. It was revealed that, in contrast to the SBT films, the polarization of the SBTN films is observed already at an annealing temperature of approximately 970 K. It was shown that the replacement of SBT films by SBTN films in the manufacture of high-density nonvolatile ferroelectric randomaccess memory (FeRAM) capacitor modules makes it possible to decrease the synthesis temperature from 1070 to 990-1000 K, which improves the compatibility with the planar technology of semiconductor devices. However, it turned out that an increase in the coercive field makes niobium-doped SBT films less attractive for the use in FeRAM.

  1. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-09

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

  2. Flexible graphene-PZT ferroelectric nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Lee, Wonho; Kahya, Orhan; Tat Toh, Chee; Özyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm-2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  3. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  4. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  5. Key integration technologies for nanoscale FRAMs.

    PubMed

    Jung, Dong J; Kim, Hyun-Ho; Kim, Kinam

    2007-12-01

    We discuss key technologies of 180-nm node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with metal-insulator-metal (MIM) capacitors. The key integration technologies in ferroelectric random access memory (FRAM) comprise: etching technology to have less plasma damage; stack technology for the preparation of robust ferroelectrics; capping technology to encapsulate cell capacitors; and vertical conjunction technology to connect cell capacitors to the plate line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but also to ensure a sensing margin of 300 mV in opposite-state retention, even after 1000 hour suffering at 150 degrees C.

  6. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-01

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  7. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

    PubMed

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-08

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  8. Short range magnetic exchange interaction favors ferroelectricity

    PubMed Central

    Wan, Xiangang; Ding, Hang-Chen; Savrasov, Sergey Y.; Duan, Chun-Gang

    2016-01-01

    Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science. To search multiferroics, currently most researches are focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced ferroelectricity under a biaxial strain. In addition, we show that such mechanism also exists in the most important single phase multiferroics, i.e. BiFeO3, suggesting that this mechanism is ubiquitous in systems with superexchange interaction. PMID:26956480

  9. Permanent ferroelectric retention of BiFeO3 mesocrystal

    PubMed Central

    Hsieh, Ying-Hui; Xue, Fei; Yang, Tiannan; Liu, Heng-Jui; Zhu, Yuanmin; Chen, Yi-Chun; Zhan, Qian; Duan, Chun-Gang; Chen, Long-Qing; He, Qing; Chu, Ying-Hao

    2016-01-01

    Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal. PMID:27782123

  10. An investigation of the effect of nurses’ technology readiness on the acceptance of mobile electronic medical record systems

    PubMed Central

    2013-01-01

    Background Adopting mobile electronic medical record (MEMR) systems is expected to be one of the superior approaches for improving nurses’ bedside and point of care services. However, nurses may use the functions for far fewer tasks than the MEMR supports. This may depend on their technological personality associated to MEMR acceptance. The purpose of this study is to investigate nurses’ personality traits in regard to technology readiness toward MEMR acceptance. Methods The study used a self-administered questionnaire to collect 665 valid responses from a large hospital in Taiwan. Structural Equation modeling was utilized to analyze the collected data. Results Of the four personality traits of the technology readiness, the results posit that nurses are optimistic, innovative, secure but uncomfortable about technology. Furthermore, these four personality traits were all proven to have a significant impact on the perceived ease of use of MEMR while the perceived usefulness of MEMR was significantly influenced by the optimism trait only. The results also confirmed the relationships between the perceived components of ease of use, usefulness, and behavioral intention in the Technology Acceptance Model toward MEMR usage. Conclusions Continuous educational programs can be provided for nurses to enhance their information technology literacy, minimizing their stress and discomfort about information technology. Further, hospital should recruit, either internally or externally, more optimistic nurses as champions of MEMR by leveraging the instrument proposed in this study. Besides, nurses’ requirements must be fully understood during the development of MEMR to ensure that MEMR can meet the real needs of nurses. The friendliness of user interfaces of MEMR and the compatibility of nurses’ work practices as these will also greatly enhance nurses’ willingness to use MEMR. Finally, the effects of technology personality should not be ignored, indicating that hospitals

  11. From "Mystery Train" to "Cyberspace Sadie": References to Technology in Blues Recordings, 1923-2003

    ERIC Educational Resources Information Center

    Cooper, B. Lee

    2006-01-01

    Over the past eight decades the lyrics of blues recordings have provided valuable insights into the opinions and feelings of singers and songwriters. Commentaries concerning workplace relations, self esteem, romantic involvements, financial security, clothing styles, alcohol use, religion, health, death, and other universal human issues have been…

  12. Principles for Information Technology Investment in U.S. Federal Electronic Records Management.

    ERIC Educational Resources Information Center

    Van Wingen, Rachel Senner; Hathorn, Fred; Sprehe, J. Timothy

    1999-01-01

    The United States Environmental Protection Agency (EPA) underwent a business process reengineering (BPR) exercise with respect to future co-location of previously separate regulatory docket facilities. Their experience suggests that future mandatory electronic records management (ERM) requirements will cause federal agencies to take a more…

  13. Ferroelectric Properties of Ultrathin Perovskite Heterostructures.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier

    2004-03-01

    Due to their switchable spontaneous polarization, ferroelectric thin films can be used in non-volatile ferroelectric random access memories (FeRAMs). Recently, 30 Gbit/cm^2 data storage densities have been demonstrated for Pb(Zr_0.2Ti_0.8)O3 films on a metallic oxide electrode (T. Tybell et al.), Phys. Rev. Lett. 89, 097601 (2002). While industry's demands for ultrahigh density information storage imposes a reduction of the cell-sizes and thicknesses of the ferroelectric thin films, fundamental questions concerning thickness dependence of ferroelectricity and related properties becomes crucial. Using a first-principles density-functional-theory approach (J. M. Soler et al.), J. Phys.: Condens. Matter 14, 2745 (2002) we have simulated the behaviour at 0 K of a typical ferroelectric capacitor epitaxially grown on a SrTiO3 substrate and made of an ultrathin film of BaTiO3 in between two SrRuO3 electrodes in short circuit (J. Junquera and Ph. Ghosez, Nature 422), 506 (2003). Both the electrical and the mechanical boundary conditions were properly considered in the calculations. We predict the existence of a critical thickness for ferroelectricity of about six unit cells (26 Ang), and relate it to an incomplete screening of the depolarizing field by real metallic electrodes. Transposing these ideas into a first-principles-based model Hamiltonian, (U. V. Waghmare and K. M. Rabe, Phys. Rev. B 55), 6161 (1997) and using Monte Carlo simulations, we have analyzed the temperature dependence of the thickness evolution of the polarization and tetragonality of the samples, as well as the piezoelectric and dielectric tensors. Our theoretical results show good agreement with very recent experimental measurements.

  14. Fatigue and hysteresis modeling of ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Yoo, In. K.; Desu, Seshu B.

    1993-10-01

    Due to their nonlinear properties, ferroelectric materials are ideal candidates for smart materials. Degradation properties such as low voltage breakdown, fatigue, and aging have been major problems in commercial applications of these materials. Such degradations affect the lifetime of ferroelectric materials. Therefore, it is important to understand degradation for reliability improvement. In this article, recent studies on fatigue and hysteresis of ferroelectric ceramics such as Lead Zirconate Titanate (PZT) thin films is reviewed. A new fatigue model is discussed in detail which is based on effective one-directional movement of defects by internal field difference, defect entrapment at the ferroelectrics-electrode interface, and resultant polarization loss at the interface. A fatigue equation derived from this model is presented. Fatigue parameters such as initial polarization, piling constant, and decay constant are defined from the fatigue equation and voltage and temperature dependence of fatigue parameters are discussed. The jump distance of defect calculated from voltage dependence of the decay constant is close to the lattice constant of ferroelectric materials, which implies that oxygen or lead vacancies migrate either parallel or antiparallel to the polarization direction. From the temperature dependence of the decay constant, it is shown that the activation energy for domain wall movement plays an important role in fatigue. The hysteresis model of ferroelectrics is shown using polarization reversal. The hysteresis loop is made by four polarization stages: nucleation, growth, merging, and shrinkage of domains. The hysteresis equation confirms that dielectric viscosity controls hysteresis properties, and temperature dependence of the coefficient of dielectric viscosity is also discussed in conjunction with fatigue mechanism.

  15. Enhancing interfacial magnetization with a ferroelectric

    SciTech Connect

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  16. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.

  17. Intelligent Processing of Ferroelectric Thin Films

    DTIC Science & Technology

    1994-05-31

    Review," Ferroelectrics, 75, 25(1987) be determined by the compensator. With the PLZT phase modulator, the above (3] H. Higashino , T. Kawaguchi, H...Phys. Lett. 42(1983)867 4. F. Wang and G. Haertling, Appl. Phys. Lett. 63(1993)1730 5. H. Higashino et al, Japan. J. Appi. Phys. Vol. 24(1985...Single Crystals," Phza.JRev. 97, 414(1991) 1585(1965) (2] D. Bonsurant and F. Gnadinger, "Ferroelectrics for [10] H. Higashino , T. Kawaguchi, H. Adachi, T

  18. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  19. Ferroelectric Cathodes in Transverse Magnetic Fields

    SciTech Connect

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-07-29

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode.

  20. 95 GHz gyrotron with ferroelectric cathode.

    PubMed

    Einat, M; Pilossof, M; Ben-Moshe, R; Hirshbein, H; Borodin, D

    2012-11-02

    Ferroelectric cathodes were reported as a feasible electron source for microwave tubes. However, due to the surface plasma emission characterizing this cathode, operation of millimeter wave tubes based on it remains questionable. Nevertheless, the interest in compact high power sources of millimeter waves and specifically 95 GHz is continually growing. In this experiment, a ferroelectric cathode is used as an electron source for a gyrotron with the output frequency extended up to 95 GHz. Power above a 5 kW peak and ~0.5 μs pulses are reported; a duty cycle of 10% is estimated to be achievable.

  1. Static ferroelectric memory transistor having improved data retention

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.

    1996-01-01

    An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

  2. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    DOE PAGES

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; ...

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through chargemore » injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.« less

  3. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    SciTech Connect

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I.; Yu, Pu; Kalinin, Sergei V.

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.

  4. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  5. First-principles study of interface doping in ferroelectric junctions

    PubMed Central

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-01-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)− monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions. PMID:27063704

  6. Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

    PubMed Central

    Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

    2016-01-01

    The ability to generate efficient giga–terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics. PMID:27492493

  7. Optical Temperature Sensor Through Upconversion Emission from the Er3+ Doped SrBi8Ti7O27 Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zou, Hua; Wang, Xusheng; Hu, Yifeng; Zhu, Xiaoqing; Sui, Yongxing; Song, Zhitang

    2016-06-01

    Er doped SrBi8Ti7O27 (SBT) ferroelectric ceramics were prepared by a solid-state reaction technique. By Er doping, the intensive green upconversion emissions were recorded under 980 nm diode laser excitation with 20 mW. The fluorescence spectrum was investigated in the temperature range of 150-580 K. By the fluorescence intensity ratio technique, the green emission band was studied as a function of temperature with a maximum sensing sensitivity of 0.0028 at 510 K. These results indicate that the Er doped SBT ferroelectric ceramics are promising multifunctional sensing materials.

  8. Integrated ferroelectric stacked MIM capacitors with 100 nF/mm(2) and 90 V breakdown as replacement for discretes.

    PubMed

    Roest, Aarnoud; Mauczok, Rüdiger; Reimann, Klaus; van Leuken-Peters, Linda; Klee, Mareike

    2009-03-01

    This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm(2) combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85 degrees C and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking of capacitors. The reliability of these ferroelectric capacitors was studied in detail with accelerated lifetime testing. The high performance of the integrated capacitors in this paper shows great potential for applications demanding high capacitance densities combined with electrostatic discharge protection.

  9. Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd, C.; Ho, Fat Duen

    2006-01-01

    All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

  10. Standardized UXO Technology Demonstration Site Moguls Scoring Record Number 581 (G-TEK Australia PTY Limited)

    DTIC Science & Technology

    2005-06-01

    Electronics Warmup for 5 Minutes: Allows for thermal stabilization of electronics. Record Relative Sensor Position (1- cm Accuracy): Documents relative...generally deeper than 1 meter. An X-ray diffraction analysis on four soil samples indicated a basic mineralogy of quartz, calcite , mica, feldspar...the feature introduced in each scenario has a degrading effect on the performance of the sensor system. However, any modifications in the UXO sensor

  11. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cano, A.; Jiménez, D.

    2010-09-01

    We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

  12. Unintended Consequences: New Materialist Perspectives on Library Technologies and the Digital Record

    ERIC Educational Resources Information Center

    Manoff, Marlene

    2013-01-01

    Digital technology has irrevocably altered the nature of the archive. Drawing on materialist critiques and the evolving field of media archaeology, this essay explores new strategies for understanding the implications of computer networks in libraries. Although a significant portion of the contemporary literature within Library and Information…

  13. Assessing Factors Affecting Physician's Intention to Adopt Biometric Authentication Technology in Electronic Medical Records

    ERIC Educational Resources Information Center

    Corazao, Cesar E.

    2014-01-01

    The Health Insurance Portability and Accountability Act of 1996 (HIPAA) regulated the privacy and security of patient information. Since HIPPA became a law, hospital operators have struggled to comply fully with its security and privacy provisions. The proximity-based biometric authentication (PBBA) technology evolved in last decade to help…

  14. Secretly Recording the Police: The Confluence of Communication, Culture, and Technology in the Public Sphere

    ERIC Educational Resources Information Center

    Schaefer, Zachary A.

    2012-01-01

    Mobile communication technologies have changed the way that police do their job. Since the Rodney King beating outside of Los Angeles in 1991, literally thousands of police brutality videos have surfaced on the internet that document perceived acts of violence carried out against seemingly defenseless perpetrators. Police organizations throughout…

  15. Correlationally Assessing the Relationship of Information Technology Investments in Electronic Medical Records to Business Value

    ERIC Educational Resources Information Center

    Richardson, Daniel J.

    2009-01-01

    The lag in information exchange and assimilation adoption experienced by modern primary care physicians in the conduct of evidence based medicine may be affecting health care system productivity and patient quality of care. Further, interest in whether or not information technology (IT) investments show an increase in business value has increased…

  16. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  17. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  18. The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

  19. Implementation of electronic medical records requires more than new software: Lessons on integrating and managing health technologies from Mbarara, Uganda.

    PubMed

    Madore, Amy; Rosenberg, Julie; Muyindike, Winnie R; Bangsberg, David R; Bwana, Mwebesa B; Martin, Jeffrey N; Kanyesigye, Michael; Weintraub, Rebecca

    2015-12-01

    Implementation lessons: • Technology alone does not necessarily lead to improvement in health service delivery, in contrast to the common assumption that advanced technology goes hand in hand with progress. • Implementation of electronic medical record (EMR) systems is a complex, resource-intensive process that, in addition to software, hardware, and human resource investments, requires careful planning, change management skills, adaptability, and continuous engagement of stakeholders. • Research requirements and goals must be balanced with service delivery needs when determining how much information is essential to collect and who should be interfacing with the EMR system. • EMR systems require ongoing monitoring and regular updates to ensure they are responsive to evolving clinical use cases and research questions. • High-quality data and analyses are essential for EMRs to deliver value to providers, researchers, and patients.

  20. Health Reform in Minnesota: An Analysis of Complementary Initiatives Implementing Electronic Health Record Technology and Care Coordination

    PubMed Central

    Soderberg, Karen; Rajamani, Sripriya; Wholey, Douglas; LaVenture, Martin

    2016-01-01

    Background: Minnesota enacted legislation in 2007 that requires all health care providers in the state to implement an interoperable electronic health record (EHR) system by 2015. 100% of hospitals and 98% of clinics had adopted EHR systems by end of 2015. Minnesota’s 2008 health reform included a health care home (HCH) program, Minnesota’s patient centered medical home. By end of 2014, 43% of HCH eligible clinics were certified with 335 certified HCHs and 430 eligible but not certified clinics. Objectives: To study the association between adoption and use of EHRs in primary care clinics and HCH certification, including use of clinical decision support tools, patient registries, electronic exchange of patient information, and availability of patient portals. Methods: Study utilized data from the 2015 Minnesota Health Information Technology Clinic Survey conducted annually by the Minnesota Department of Health. The response rate was 80% with 1,181 of 1,473 Minnesota clinics, including 662 HCH eligible primary care clinics. The comparative analysis focused on certified HCHs (311) and eligible but not certified clinics (351). Results: HCH clinics utilized the various tools of EHR technology at a higher rate than non-HCH clinics. This greater utilization was noted across a range of functionalities: clinical decision support, patient disease registries, EHR to support quality improvement, electronic exchange of summary care records and availability of patient portals. HCH certification was significant for clinical decision support tools, registries and quality improvement. Conclusions: HCH requirements of care management, care coordination and quality improvement can be better supported with EHR technology, which underscores the higher rate of utilization of EHR tools by HCH clinics. Optimizing electronic exchange of health information remains a challenge for all clinics, including HCH certified clinics. This research presents the synergy between complementary

  1. Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

    NASA Astrophysics Data System (ADS)

    Ota, Hiroyuki; Migita, Shinji; Hattori, Junichi; Fukuda, Koichi; Toriumi, Akira

    2017-04-01

    In this paper, we discuss the subthreshold operation of fully depleted silicon-on-insulator FETs (SOI-FETs) and FinFETs, with embedded ferroelectric negative-capacitance gate insulators, using technology computer-aided design simulations. SOI-FETs with ultrathin buried-oxide layers and appropriate workfunctions for bottom electrodes are found to be more preferable to attain steep subthreshold swings lesser than 60 mV/decade, because SOI-FETs can effectively enable a voltage drop in the ferroelectric layer, even though the degree of matching of the depletion capacitance and the ferroelectric gate insulator capacitance is almost the same in SOI-FETs and FinFETs. These results give a novel insight into how the subthreshold swing can be improved in ferroelectric-gate MOSFETs.

  2. Reviewing the benefits and costs of electronic health records and associated patient safety technologies.

    PubMed

    Menachemi, Nir; Brooks, Robert G

    2006-06-01

    In the current paper, we describe the challenges in measuring return on investment (ROI) and review published ROI studies on health IT. In addition, given the absence of a robust ROI literature base, we review the general benefits and potential costs of various health IT applications including electronic health records (EHRs), computerized physicians order entry (CPOE) systems, and clinical decision support systems (CDSS). We conclude that articles examining these benefits are much more common than studies examining ROI itself. This trend suggests the early stage of this knowledge base. Additional research utilizing broader perspectives and multidisciplinary techniques will be needed before a better understanding of ROI from health IT is achieved.

  3. Size Effect in Ferroelectric Long Cylinders

    NASA Astrophysics Data System (ADS)

    Wang, Yuguo; Zhang, Peilin; Wang, Chunlei; Zhong, Weilie; N, Napp; D, R. Tilly

    1995-02-01

    The Curie temperature and polarization in a ferroelectric cylinder with infinite length have been examined using Landau free energy expansion. The Curie temperature and polarization decrease with decreasing cylinder diameter for the positive extrapolation length, and reach zero at the critical size. For negative extrapolation length, both Curie temperature and polarization increase with decreasing cylinder diameter.

  4. A hybrid ferroelectric-flash memory cells

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  5. Ferroelectric control of a Mott insulator

    PubMed Central

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E.; Barthélémy, Agnès; Bibes, Manuel

    2013-01-01

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices. PMID:24089020

  6. Ferroelectric Diodes with Charge Injection and Trapping

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Fan, Hua; Lu, Zengxing; Li, Peilian; Huang, Zhifeng; Tian, Guo; Yang, Lin; Yao, Junxiang; Chen, Chao; Chen, Deyang; Yan, Zhibo; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

    2017-01-01

    Ferroelectric diodes with polarization-modulated Schottky barriers are promising for applications in resistive switching (RS) memories. However, they have not achieved satisfactory performance reliability as originally hoped. The physical origins underlying this issue have not been well studied, although they deserve much attention. Here, by means of scanning Kelvin probe microscopy we show that the electrical poling of ferroelectric diodes can cause significant charge injection and trapping besides polarization switching. We further show that the reproducibility and stability of switchable diode-type RS behavior are significantly affected by the interfacial traps. A theoretical model is then proposed to quantitatively describe the modifications of Schottky barriers by charge injection and trapping. This model is able to reproduce various types of hysteretic current-voltage characteristics as experimentally observed. It is further revealed that the charge injection and trapping can significantly modify the electroresistance ratio, RS polarity, and high- or low-resistance states initially defined by the polarization direction. Several approaches are suggested to suppress the effect of charge injection and trapping so as to realize high-performance polarization-reversal-induced RS. This study, therefore, reveals the microscopic mechanisms for the RS behavior comodulated by polarization reversal and charge trapping in ferroelectric diodes, and also provides useful suggestions for developing reliable ferroelectric RS memories.

  7. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  8. A Model for Ferroelectric Phase Shifters

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Qureshi, A. Haq

    2000-01-01

    Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

  9. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

  10. Ferroelectric Devices Emit Charged Particles and Radiation

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Felsteiner, Joshua; Karsik, Yakov

    2005-01-01

    Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

  11. Recording and Reading Alchemy and Art-Technology in Medieval and Premodern German Recipe Collections.

    PubMed

    Neven, Sylvie

    2016-01-01

    In the Middle Ages and the premodern period knowledge of alchemical practices and materials was transmitted via collections of recipes often grouped concomitantly with art-technological instructions. In both alchemy and chemical technology particular importance is placed on artisanal and craft practices. Both are concerned with the description of colours. Both require procedures involving precise and specifically defined actions, prescriptions and ingredients. Assuming that alchemical and artistic texts have the same textual format, this raises the question: were they produced, diffused and read by the same people? This paper investigates the authorship and the context of production behind a sample of German alchemical manuscripts dating from the fourteenth to the sixteenth century. It scrutinizes their process of production, compilation and dissemination. This paper also sheds light on the various types of marginalia, and correlates them with their diverse functions. It thus delivers significant information about the readers and users of these manuscripts.

  12. Intrinsic ferroelectric switching from first principles

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.

    2016-06-01

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  13. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-16

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  14. The origin of ferroelectricity in Hf1-xZrxO2: A computational investigation and a surface energy model

    NASA Astrophysics Data System (ADS)

    Materlik, R.; Künneth, C.; Kersch, A.

    2015-04-01

    The structural, thermal, and dielectric properties of the ferroelectric phase of HfO2, ZrO2, and Hf0.5Zr0.5O2 (HZO) are investigated with carefully validated density functional computations. We find that the free bulk energy of the ferroelectric orthorhombic Pca21 phase is unfavorable compared to the monoclinic P21/c and the orthorhombic Pbca phase for all investigated stoichiometries in the Hf1-xZrxO2 system. To explain the existence of the ferroelectric phase in nanoscale thin films, we explore the Gibbs/Helmholtz free energies as a function of stress and film strain and find them unlikely to become minimal in HZO films for technological relevant conditions. To assess the contribution of surface energy to the phase stability, we parameterize a model, interpolating between existing data, and find the Helmholtz free energy of ferroelectric grains minimal for a range of size and stoichiometry. From the model, we predict undoped HfO2 to be ferroelectric for a grain size of about 4 nm and epitaxial HZO below 5 nm. Furthermore, we calculate the strength of an applied electric field necessary to cause the antiferroelectric phase transformation in ZrO2 from the P42/nmc phase as 1 MV/cm in agreement with experimental data, explaining the mechanism of field induced phase transformation.

  15. Manganese incorporation into ferroelectric lead titanate

    NASA Astrophysics Data System (ADS)

    Stoupin, Stanislav

    Substitution with 3d magnetic transition elements in ABO 3 ferroelectric perovskite host media is widely utilized to produce relaxor ferroelectrics. Many resulting solid solutions exhibit magnetoelectric properties affected by concentration levels of the introduced magnetic ions. For conventional material preparation techniques such as firing of mechanically mixed oxides, incorporation is often limited by 5 mol% concentration level. Doping at higher concentrations requires introduction of other substituents to compensate charge within the unit cell to promote formation of the perovskite phase. In contrast, molecular mixing of precursor materials at the initial phase of preparation procedure offers an advantage of achieving higher incorporation levels of the 3d elements without additional charge-compensating ions. Presented in this thesis is a new sol-gel procedure utilized for high level incorporation of 3d magnetic ions into ferroelectric lead titanate. The technique was applied to produce PbTi1-xMnxO 3 solid solution, a perovskite system promising for high degree of magnetoelectric coupling. Concentration dependent studies were performed to characterize structural, thermal, ferroelectric and magnetic properties of the material. The solubility limit of Mn has been found to be 20 mol% and the material remains tetragonally distorted. X-ray Absorption Spectroscopy confirms that local structural environment of Mn, Ti, and Pb is consistent with tetragonal symmetry of the unit cell. Increase in Mn concentration leads to reduction in melting point, broadening of the ferroelectric transition, reduction of the transition temperature and increase in dielectric constant of the material. At the solubility limit the system was found to be ferromagnetic below 50 K.

  16. Interaction of Terahertz Radiation with Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nelson, Keith

    2007-03-01

    Ferroelectric crystals have long been used as acoustic transducers and receivers. An extensive toolset has been developed for MHz-frequency acoustic wave generation, control, guidance, and readout. In recent years, an analogous toolset has been developed for terahertz wave transduction and detection. Femtosecond optical pulses irradiate ferroelectric crystals to generate responses in the 0.1-5 THz frequency range that are admixtures of electromagnetic and polar lattice vibrational excitations called phonon-polaritons. Spatiotemporal femtosecond pulse shaping may be used to generate additional optical pulses that arrive at specified times and sample locations for control and manipulation of the THz waves. Femtosecond laser machining may be used for fabrication of waveguides, resonators, and other structures that are integrated into the ferroelectric host crystal. Finally, real-space imaging of the THz fields can be executed with variably delayed femtosecond probe pulses, permitting direct visualization of THz wave spatial and temporal evolution. This ``polaritonics'' toolset enables multiplexed generation of arbitrary THz waveforms and use of the waveforms within the ferroelectric host crystal or after projection into free space or an adjacent medium. The polaritonics platform will be reviewed and several new developments and applications will be presented. These include spectroscopy of relaxor ferroelectrics, whose temperature-dependent dielectric responses in the GHz-THz regime reveal complex polarization dynamics on well separated fast and slow time scales; direct measurement of phonon-polariton lattice vibrational displacements through femtosecond time-resolved x-ray diffraction; generation of high polariton field amplitudes and pulse energies; use of large-amplitude polariton waves to drive nonlinear lattice vibrational responses; and enhancement of optical-to-THz conversion efficiency through a pseudo-phase-matching approach that circumvents the very large

  17. Patients welcome the Sickle Cell Disease Mobile Application to Record Symptoms via Technology (SMART).

    PubMed

    Shah, Nirmish; Jonassaint, Jude; De Castro, Laura

    2014-01-01

    The widespread use of mobile phones among patients provides a unique opportunity for the development of mobile health intervention designed specifically for sickle cell disease, which will improve self-management as well as health care delivery. Our objective was to determine the receptiveness of patients with sickle cell disease to technology and a mobile application (app) designed for sickle cell disease. Phase I included 100 patients who completed a survey inquiring about receptiveness to technology and use of mobile devices to self-manage and communicate with providers. Phase II surveyed 17 additional patients who tested a newly developed sickle cell disease app, to report its usability and utility. In Phase I, on a 0-10 Likert scale where 0 is not comfortable, and 10 is extremely comfortable, 87.0% of participants reported >5 comfort level using a mobile device for health care management. Participants were comfortable with texting (81.0%) and emailing (77.0%) but not with social media (40.0%). Most participants (84.0%) owned computer devices (desktops, laptops, tablets, or iPads), and 92.0% owned mobile devices. In Phase II, participants reported that the app tested was useful to track pain (88.0%), and 94.0% reported that it was easy to use, practical, and useful for health self-management. All reported that the app was useful to help one communicate with providers. Following the use of our app, patients found it an extremely valuable tool for tracking pain, health management, and communicating with providers. We conclude that mobile technology might provide an appropriate venue for sickle cell disease healthcare management.

  18. The development and design of an electronic patient record using open source web-based technology.

    PubMed

    Syed-Mohamad, Sharifa Mastura; Ali, Siti Hawa; Mat-Husin, Mohd Nazri

    2010-01-01

    This paper describes the method used to develop the One Stop Crisis Centre (OSCC) Portal, an open source web-based electronic patient record system (EPR) for the One Stop Crisis Center, Hospital Universiti Sains Malaysia (HUSM) in Kelantan, Malaysia. Features and functionalities of the system are presented to demonstrate the workflow. Use of the OSCC Portal improved data integration and data communication and contributed to improvements in care management. With implementation of the OSCC portal, improved coordination between disciplines and standardisation of data in HUSM were noticed. It is expected that this will in turn result in improved data confidentiality and data integrity. The collected data will also be useful for quality assessment and research. Other low-resource centers with limited computer hardware and access to open-source software could benefit from this endeavour.

  19. Health care information technology in rural America: electronic medical record adoption status in meeting the national agenda.

    PubMed

    Bahensky, James A; Jaana, Mirou; Ward, Marcia M

    2008-01-01

    Continuing is a national political drive for investments in health care information technology (HIT) that will allow the transformation of health care for quality improvement and cost reduction. Despite several initiatives by the federal government to spur this development, HIT implementation has been limited, particularly in the rural market. The status of technology use in the transformation effort is reviewed by examining electronic medical records (EMRs), analyzing the existing rural environment, identifying barriers and factors affecting their development and implementation, and recommending needed steps to make this transformation occur, particularly in rural communities. A review of the literature for HIT in rural settings indicates that very little progress has been made in the adoption and use of HIT in rural America. Financial barriers and a large number of HIT vendors offering different solutions present significant risks to rural health care providers wanting to invest in HIT. Although evidence in the literature has demonstrated benefits of adopting HIT such as EMRs, important technical, policy, organizational, and financial barriers still exist that prevent the implementation of these systems in rural settings. To expedite the spread of HIT in rural America, federal and state governments along with private payers, who are important beneficiaries of HIT, must make difficult decisions as to who pays for the investment in this technology, along with driving standards, simplifying approaches for reductions in risk, and creating a workable operational plan.

  20. Study of ferroelectric characteristics of diisopropylammonium bromide films

    NASA Astrophysics Data System (ADS)

    Thirmal, C.; Biswas, P. P.; Shin, Y. J.; Noh, T. W.; Giridharan, N. V.; Venimadhav, A.; Murugavel, P.

    2016-09-01

    Organic molecular ferroelectrics are highly desirable due to their numerous advantages. In the present work, a thick film of diisopropylammonium bromide organic molecular ferroelectric is fabricated on the ITO/glass substrate. The grown film shows preferential orientation along the c-axis with a ferroelectric transition at 419 K. The piezoresponse force microscopic measurements are done in a dual ac resonance tracking mode for its switching characteristics. The amplitude and phase images of the oppositely written domain patterns exhibit a clear contrast with 180° phase difference. The dynamical spectroscopic studies reveal a butterfly loop in amplitude and hysteretic character of the phase which are the expected characteristics features of ferroelectrics. In addition, the macroscopic polarization versus electric field hysteresis gives an additional proof for ferroelectric character of the film with the maximum polarization of 3.5 μC/cm2. Overall, we have successfully fabricated diisopropylammonium bromide organic films and demonstrated its room temperature ferroelectric characteristics.

  1. Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

    NASA Astrophysics Data System (ADS)

    Qiu, Xunlin

    2010-07-01

    Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called "ferroelectrets"), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

  2. Ferroelectric domain wall motion induced by polarized light

    PubMed Central

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  3. Ferroelectric domain engineering by focused infrared femtosecond pulses

    SciTech Connect

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan; Karpinski, Pawel; Koynov, Kaloian; Wang, Bingxia; Trull, Jose; Cojocaru, Crina; Krolikowski, Wieslaw

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  4. Phonon localization drives polar nanoregions in a relaxor ferroelectric.

    PubMed

    Manley, M E; Lynn, J W; Abernathy, D L; Specht, E D; Delaire, O; Bishop, A R; Sahul, R; Budai, J D

    2014-04-10

    Relaxor ferroelectrics exemplify a class of functional materials where interplay between disorder and phase instability results in inhomogeneous nanoregions. Although known for about 30 years, there is no definitive explanation for polar nanoregions (PNRs). Here we show that ferroelectric phonon localization drives PNRs in relaxor ferroelectric PMN-30%PT using neutron scattering. At the frequency of a preexisting resonance mode, nanoregions of standing ferroelectric phonons develop with a coherence length equal to one wavelength and the PNR size. Anderson localization of ferroelectric phonons by resonance modes explains our observations and, with nonlinear slowing, the PNRs and relaxor properties. Phonon localization at additional resonances near the zone edges explains competing antiferroelectric distortions known to occur at the zone edges. Our results indicate the size and shape of PNRs that are not dictated by complex structural details, as commonly assumed, but by phonon resonance wave vectors. This discovery could guide the design of next generation relaxor ferroelectrics.

  5. A Role for Semantic Web Technologies in Patient Record Data Collection

    NASA Astrophysics Data System (ADS)

    Ogbuji, Chimezie

    Business Process Management Systems (BPMS) are a component of the stack of Web standards that comprise Service Oriented Architecture (SOA). Such systems are representative of the architectural framework of modern information systems built in an enterprise intranet and are in contrast to systems built for deployment on the larger World Wide Web. The REST architectural style is an emerging style for building loosely coupled systems based purely on the native HTTP protocol. It is a coordinated set of architectural constraints with a goal to minimize latency, maximize the independence and scalability of distributed components, and facilitate the use of intermediary processors.Within the development community for distributed, Web-based systems, there has been a debate regarding themerits of both approaches. In some cases, there are legitimate concerns about the differences in both architectural styles. In other cases, the contention seems to be based on concerns that are marginal at best. In this chapter, we will attempt to contribute to this debate by focusing on a specific, deployed use case that emphasizes the role of the Semantic Web, a simple Web application architecture that leverages the use of declarative XML processing, and the needs of a workflow system. The use case involves orchestrating a work process associated with the data entry of structured patient record content into a research registry at the Cleveland Clinic's Clinical Investigation department in the Heart and Vascular Institute.

  6. Long-Term Continuous Ambulatory ECG Monitors and External Cardiac Loop Recorders for Cardiac Arrhythmia: A Health Technology Assessment

    PubMed Central

    Kabali, Conrad; Xie, Xuanqian; Higgins, Caroline

    2017-01-01

    Background Ambulatory electrocardiography (ECG) monitors are often used to detect cardiac arrhythmia. For patients with symptoms, an external cardiac loop recorder will often be recommended. The improved recording capacity of newer Holter monitors and similar devices, collectively known as longterm continuous ambulatory ECG monitors, suggests that they will perform just as well as, or better than, external loop recorders. This health technology assessment aimed to evaluate the effectiveness, cost-effectiveness, and budget impact of longterm continuous ECG monitors compared with external loop recorders in detecting symptoms of cardiac arrhythmia. Methods Based on our systematic search for studies published up to January 15, 2016, we did not identify any studies directly comparing the clinical effectiveness of longterm continuous ECG monitors and external loop recorders. Therefore, we conducted an indirect comparison, using a 24-hour Holter monitor as a common comparator. We used a meta-regression model to control for bias due to variation in device-wearing time and baseline syncope rate across studies. We conducted a similar systematic search for cost-utility and cost-effectiveness studies comparing the two types of devices; none were found. Finally, we used historical claims data (2006–2014) to estimate the future 5-year budget impact in Ontario, Canada, of continued public funding for both types of longterm ambulatory ECG monitors. Results Our clinical literature search yielded 7,815 non-duplicate citations, of which 12 cohort studies were eligible for indirect comparison. Seven studies assessed the effectiveness of longterm continuous monitors and five assessed external loop recorders. Both types of devices were more effective than a 24-hour Holter monitor, and we found no substantial difference between them in their ability to detect symptoms (risk difference 0.01; 95% confidence interval −0.18, 0.20). Using GRADE for network meta-analysis, we evaluated the

  7. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  8. Ferroelectric domain engineering and micro-structuring of lithium niobate

    NASA Astrophysics Data System (ADS)

    Mailis, Sakellaris

    2010-11-01

    This paper discusses a number of recently developed all optical and optically assisted methods for ferroelectric domain engineering in lithium niobate and their impact on the micro-structuring of this optical ferroelectric crystal. Optical radiation is used to change the response of lithium niobate crystals to externally applied electric field encouraging or inhibiting ferroelectric domain inversion in a simultaneous or latent manner. Optically assisted poling processes have the advantage of producing ferroelectric domains with arbitrary shapes free from crystal symmetry restrictions which is very important for fabricating surface micro/nano-structures in this material.

  9. Ferroelectric nanostructure having switchable multi-stable vortex states

    DOEpatents

    Naumov, Ivan I.; Bellaiche, Laurent M.; Prosandeev, Sergey A.; Ponomareva, Inna V.; Kornev, Igor A.

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  10. A ferroelectric model for the low emissivity highlands on Venus

    NASA Astrophysics Data System (ADS)

    Shepard, M. K.; Arvidson, R. E.; Brackett, R. A.; Fegley, B.

    1994-03-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (105) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  11. One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

    PubMed Central

    Liang, Longyue; Kang, Xueliang

    2016-01-01

    One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined. PMID:27812477

  12. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

    PubMed Central

    Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

    2016-01-01

    The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

  13. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  14. The ferroelectric analysis of LCoS

    NASA Astrophysics Data System (ADS)

    Hao, Lifang; Lin, Bin

    2010-11-01

    In order to utilize the LCoS, this paper advances a new patten liquid material which is ferroelectric liquid crystal. It has the characteristics, such as time division-style full-color display, high resolution, low voltage and high speed response. If it is used in the microdisplay, we can attain large area visual display, high open rate and high responding time. The alignment of ferroelectric liquid crystal is very complicated, so we use photo-alignment, rubbing or hybrid-alignment to determine the direction of liquid. Once the liquid layer has been fabricated, we use space parameter method to analyse the liquid layer, and we make sure the detailed optical thickness and pretilted angle.

  15. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    NASA Astrophysics Data System (ADS)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  16. Block copolymer/ferroelectric nanoparticle nanocomposites

    NASA Astrophysics Data System (ADS)

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-08-01

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were

  17. Upper bounds for flexoelectric coefficients in ferroelectrics

    NASA Astrophysics Data System (ADS)

    Yudin, P. V.; Ahluwalia, R.; Tagantsev, A. K.

    2014-02-01

    Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosymmetric materials. These features make flexoelectricity of growing interest during the last decade. At the same time, the available theoretical and experimental results are rather contradictory. In particular, experimentally measured flexoelectric coefficients in some ferroelectric materials largely exceed theoretically predicted values. Here, we determine the upper limits for the magnitude of the static bulk contribution to the flexoelectric effect in ferroelectrics, the contribution which was customarily considered as the dominating one. The magnitude of the upper bounds obtained suggests that the anomalously high flexoelectric coupling documented for perovskite ceramics can hardly be attributed to a manifestation of the static bulk effect.

  18. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  19. A Ferroelectric Oxide Made Directly on Silicon

    DTIC Science & Technology

    2009-04-17

    Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy (Pennsylvania State University, University Park, 2002...Ferroelectric Oxide Made Directly on Silicon Maitri P. Warusawithana,1 Cheng Cen,2 Charles R. Sleasman,2 Joseph C. Woicik,3 Yulan Li,4 Lena Fitting...Schlom1* Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering

  20. Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

    DTIC Science & Technology

    2006-09-15

    gap materials because the visible photon energy is much smaller than the band gap (10). Consequently, the absorption is extremely weak and the...UV ex- citation, the photon energy is above the band gaps of ferroelectrics, leading to a much stronger absorption and a shorter penetration depth...preventing light from entering the substrate. UV excitation near the band gap also leads to strong resonance enhancement of Raman sig- nals. This is

  1. Barkhausen noise in a relaxor ferroelectric.

    PubMed

    Colla, Eugene V; Chao, Lambert K; Weissman, M B

    2002-01-07

    Barkhausen noise, including both periodic and aperiodic components, is found in and near the relaxor regime of a familiar relaxor ferroelectric, PbMg(1/3)Nb(2/3)O3, driven by a periodic electric field. The temperature dependences of both the amplitude and spectral form show that the size of the coherent changes in the dipole moment shrink as the relaxor regime is entered, contrary to expectations based on some simple models.

  2. Block copolymer/ferroelectric nanoparticle nanocomposites.

    PubMed

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-09-21

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.

  3. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  4. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, Peter J.

    1987-01-01

    A method of electrically inducing mechanical precompression of a ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion.

  5. A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Miranda, Felix A.; VanKeuls, Fred W.

    1998-01-01

    A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

  6. Ferromagnetism induced by entangled charge and orbital orderings in ferroelectric titanate perovskites

    PubMed Central

    Bristowe, N. C.; Varignon, J.; Fontaine, D.; Bousquet, E.; Ghosez, Ph.

    2015-01-01

    In magnetic materials, the Pauli exclusion principle typically drives anti-alignment between electron spins on neighbouring species resulting in antiferromagnetic behaviour. Ferromagnetism exhibiting spontaneous spin alignment is a fairly rare behaviour, but once materialized is often associated with itinerant electrons in metals. Here we predict and rationalize robust ferromagnetism in an insulating oxide perovskite structure based on the popular titanate series. In half-doped layered titanates, the combination of Jahn–Teller and oxygen breathing motions opens a band gap and creates an unusual charge and orbital ordering of the Ti d electrons. It is argued that this intriguingly intricate electronic network favours the elusive inter-site ferromagnetic (FM) ordering, on the basis of intra-site Hund's rules. Finally, we find that the layered oxides are also ferroelectric with a spontaneous polarization approaching that of BaTiO3. The concepts are general and design principles of the technologically desirable FM ferroelectric multiferroics are presented. PMID:25807180

  7. Development of "fragility" in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, Yi-zhen; Chen, Lan; Wang, Hai-yan; Frank Zhang, X.; Fu, Jun; Xiong, Xiao-min; Zhang, Jin-xiu

    2014-02-01

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the "Super-Arrhenius (SA)" relaxation. Despite great progress in glass-forming liquids, the "fragility" property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg1/3Nb2/3)O3-x%PbTiO3 (PMN - x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the "fragility" properties of the SA relaxation in PMN - x%PT. Such fascinating issues as the mechanism of the "fragility" at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between "fragility" and ferroelectric order are investigated. Our results show that both the "fragility" of the temperature-dependent SA relaxation and ferroelectric order in the PMN - x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature Tc. A reasonable physical scenario, based on our "configurational-entropy-loss" theory and Nowick's "stress-induced-ordering" theory, was proposed.

  8. WFL: Microwave Applications of Thin Ferroelectric Films

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert

    2013-01-01

    We have developed a family of tunable microwave circuits, operating from X- through Ka-band, based on laser ablated BaxSr1-xTiO films on lanthanum aluminate and magnesium oxide substrates. Circuits include voltage controlled oscillators, filters, phase shifters and antennas. A review of the basic theory of operation of these devices will be presented along with measured performance. Emphasis has been on low-loss phase shifters to enable a new phased array architecture. The critical role of phase shifter loss and transient response in reflectarray antennas will be discussed. The Ferroelectric Reflectarray Critical Components Space Experiment was launched on the penultimate Space Shuttle, STS-134, in May of 2011. It included a bank of ferroelectric phase shifters with two different stoichiometries as well as ancillary electronics. The experiment package and status will be reported. In addition, unusual results of a Van der Pauw measurement involving a ferroelectric film grown on buffered high resisitivity silicon will be discussed.

  9. Prediction of a native ferroelectric metal

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-04-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity--that is, the existence of a switchable intrinsic electric polarization--has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound.

  10. Ferroelectricity in underdoped La-based cuprates

    PubMed Central

    Viskadourakis, Z.; Sunku, S. S.; Mukherjee, S.; Andersen, B. M.; Ito, T.; Sasagawa, T.; Panagopoulos, C.

    2015-01-01

    Doping a “parent” antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2-xSrxCuO4, La2LixCu1-xO4 and La2CuO4+x. It is proposed that ferroelectricity may result from local CuO6 octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction. PMID:26486276

  11. Quantum properties of charged ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Sturman, B.; Podivilov, E.; Stepanov, M.; Tagantsev, A.; Setter, N.

    2015-12-01

    We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this potential, dependencies on the ferroelectric characteristics, as well as the spatial structure and formation energy of the wall. Our description is based on the Hartree and Thomas-Fermi methods and Landau theory for the ferroelectric transitions. Changeover from a few to many quantum levels (with the electron binding energies ˜1 eV) is controlled by a single characteristic parameter. The quantum models well describe the core of the wall, whose width is typically ˜10 nm. Additionally, the walls possess pronounced long-range tails which are due to trap recharging. For the trap concentration Nt=(1017-1018) cm-3 , the tail length ℓ is of the μ m scale. On the distances much larger than ℓ the walls are electrically uncoupled from each other and the crystal faces.

  12. Influence of ferroelectric polarization on magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Mardana, A.; Ducharme, S.; Adenwalla, S.

    2010-03-01

    Thin film heterostructures of transition metal ferromagnets (FM) and polymer ferroelectrics (FE) are investigated to look for changes in the magnetic anisotropy of the FM layer that occur on switching the FE polarization (with an ensuing change in the electric field direction).[1] Samples of [Glass/ Pd (50 nm)/Co wedge (0.9-2.6nm)/ferroelectric P(VDF-TrFE) (53 nm)/Al (30nm)] are deposited via sputtering or evaporation for the metallic layers and via Langmuir-Schaefer deposition for the polymer ferroelectric. [2] Magnetic and FE properties have been characterized using the Magneto-Optical Kerr Effect (MOKE) and the pyroelectric effect. Polar and longitudinal MOKE loops are measured across the Co wedge for both positive and negative FE polarization and the difference in the two MOKE loops is ascribed to the changes in the magnetic anisotropy of the FM layer. [3] These changes are most apparent in the region where the Co undergoes a transition from in-plane to out-of-plane anisotropy. This research is supported by the NSF MRSEC through Grant No. DMR- 0820521 1. Chun-Gang Duan et al, Appl. Phys. Lett. 92, 122905 (2008) 2. A. V. Bune, et al, Nature (London) 391, 874 (1998) 3. P. F. Carcia, J.Appl. Phys. 63, 5066 (1988)

  13. Implementation of health information technology in Veterans Health Administration to support transformational change: telehealth and personal health records.

    PubMed

    Chumbler, Neale R; Haggstrom, David; Saleem, Jason J

    2011-12-01

    The Institute of Medicine report, Crossing the Quality Chasm, called for significant improvements in 6 elements of healthcare performance: safety, effectiveness, patient centeredness, timeliness, efficiency, and equity. To meet the changing care needs of older veterans, many of whom are trying to manage the complexities of their chronic diseases in their own homes, the Veterans Health Administration (VHA) has promoted many of the Institute of Medicine elements by implementing health information technology (health IT), such as telehealth and a personal health record (PHR). To that end, approximately 5 years ago, VHA created the Office of Care Coordination and in particular a patient-centered Care Coordination/Home Telehealth (CCHT) program, which uses telehealth technologies (eg, messaging devices) to coordinate care directly from a patient's home to help self-manage their chronic diseases. VHA has also developed a PHR, My HealtheVet, which is a secure web-based portal that provides veterans the capability to access and manage health information. This article discusses the mechanisms by which these forms of health IT have been implemented to improve access to care and improve health. For telehealth, we present the outcomes from some of the published literature. For PHRs, we outline what is known to date and future research directions. The article also examines some structural, policy-related, and organizational barriers to health IT implementation and offers suggestions for future research.

  14. Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.

    SciTech Connect

    Aggarwal, S.; Auciello, O.; Dhote, A. M.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Muller, A. H.; Ramesh, R.

    1999-06-29

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMS) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and device processes relevant to device development. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed. Direct imaging of ferroelectric domains under applied electric fields can provide valuable information to understand domain dynamics in ferroelectric films. We discuss results of piezoresponse scanning force microscopy (SFM) imaging for nanoscale studies of polarization reversal and retention loss in Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT)-based capacitors. Another powerful technique suitable for in situ, real-time characterization of film growth processes and ferroelectric film-based device operation is based on synchrotrons X-ray scattering, which is currently being implemented at Argonne National Laboratory.

  15. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    DOE PAGES

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complexmore » polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

  16. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    SciTech Connect

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; Su, Dong; Chen, Long-Qing; Huang, Guanzhong; Munroe, Paul R.; Valanoor, Nagarajan

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.

  17. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  18. Tunable ferroelectric meta-material phase shifter embedded inside low temperature co-fired ceramics (LTCC)

    NASA Astrophysics Data System (ADS)

    Tork, Hossam S.

    This dissertation describes electrically tunable microwave devices utilizing low temperature co-fired ceramics (LTCC) and thick film via filled with the ferroelectric materials barium strontium titanate (BST) and barium zirconate titanate (BZT). Tunable ferroelectric capacitors, zero meta-material phase shifters, and tunable meta-material phase shifters are presented. Microwave phase shifters have many applications in microwave devices. They are essential components for active and passive phased array antennas and their most common use is in scanning phased array antennas. They are used in synthetic aperture radars (SAR), low earth orbit (LEO) communication satellites, collision warning radars, and intelligent vehicle highway systems (IVHS), in addition to various other applications. Tunable ferroelectric materials have been investigated, since they offer the possibility of lowering the total cost of phased arrays. Two of the most promising ferroelectric materials in microwave applications are BST and BZT. The proposed design and implementation in this research introduce new types of tunable meta-material phase shifters embedded inside LTCC, which use BST and BZT as capacitive tunable dielectric material controlled by changing the applied voltage. This phase shifter has the advantages of meta-material structures, which produce little phase error and compensation while having the simultaneous advantage of using LTCC technology for embedding passive components that improve signal integrity (several signal lines, power planes, and ground planes) by using different processes like via filling, screen printing, laminating and firing that can be produced in compact sizes at a low cost. The via filling technique was used to build tunable BST, BZT ferroelectric material capacitors to control phase shift. Finally, The use of the proposed ferroelectric meta-material phase shifter improves phase shifter performance by reducing insertion loss in both transmitting and receiving

  19. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of

  20. Electrospinning induced ferroelectricity in poly(vinylidene fluoride) fibers.

    PubMed

    Baji, Avinash; Mai, Yiu-Wing; Li, Qian; Liu, Yun

    2011-08-01

    Poly(vinylidene fluoride) (PVDF) fibers with diameters ranging from 70 to 400 nm are produced by electrospinning and the effect of fiber size on the ferroelectric β-crystalline phase is determined. Domain switching and associated ferro-/piezo-electric properties of the electrospun PVDF fibers were also determined. The fibers showed well-defined ferroelectric and piezoelectric properties.

  1. Electrospinning induced ferroelectricity in poly(vinylidene fluoride) fibers

    NASA Astrophysics Data System (ADS)

    Baji, Avinash; Mai, Yiu-Wing; Li, Qian; Liu, Yun

    2011-08-01

    Poly(vinylidene fluoride) (PVDF) fibers with diameters ranging from 70 to 400 nm are produced by electrospinning and the effect of fiber size on the ferroelectric β-crystalline phase is determined. Domain switching and associated ferro-/piezo-electric properties of the electrospun PVDF fibers were also determined. The fibers showed well-defined ferroelectric and piezoelectric properties.

  2. Ferroelectric functionality in SrTiO3/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Wu, Y. Z.; Jiang, X. F.; Cai, M. Q.; Gu, L. P.; Yang, G. W.

    2013-11-01

    By the first-principles calculations, various SrTiO3/Si interface architectures have been studied in this work and the computed results showed that the stable ferroelectricity can be realized in the SrTiO3/Si system. The Si/SrO interface architecture with the Si-O configuration showed predominately the ferroelectric nature and the height of the potential barrier between the negative and positive poled states (0.77 eV per interfacial unit cell). The presence of the covalent bond between the substrate Si and O of SrO layer adjacent to the substrate Si leads to the disappearance of the electronic dipoles at the interface, and the reason is that the Si-O configuration of the Si/SrO interface architecture exhibits ferroelectric nature. In order to further understand the influence of the interfacial bonding nature on the ferroelectricity of the oxide layer, the BaTiO3/Si heterojunction with the same interface architectures also have been studied. Indeed, the Si/BaO interface architecture with the Si-O configuration showed predominately the ferroelectric nature too. Certainly, a full SrO (or BaO) layer directly grown on the substrate Si is benefit to the realization of the ferroelectric functionality in the ferroelectric-Si heterojunction. These findings are useful for the understanding of the basic physics of the ferroelectric-Si heterojunction and the silicon-based functional oxide device design.

  3. Elastic Domain Wall Waves in Ferroelectric Ceramics and Single Crystals

    DTIC Science & Technology

    1988-07-01

    and identify by block number) " This report reviews research on acoustic guided waves along poling transitions in counter- poled ferroelectric ceramics...INTRODUCTION........................................ 1 II. GENERAL REVIEW . .. .......... ........... ... 2 (a) COUNTERPOLED CERAMICS...and better understanding of new ferroelectric materials. II. GENERAL REVIEW The initial phase of this project was an in-depth study of elastic wave

  4. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  5. Future Development of Dense Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.

    2001-01-01

    The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

  6. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  7. Ferroelectric domain structure of Pb(Zr /sub 52/Ti /sub 48/)O/sub 3/

    SciTech Connect

    Goo, E.K.; Mishra, R.K.

    1980-08-01

    Ferroelectric domains are twins that are formed when PZT undergoes a phase transformation from a non-ferroelectric cubic phase to a ferroelectric tetragonal phase upon cooling below approx. 375/sup 0/C. The tetragonal phase is spontaneously polarized in the direction of c-axis, making each twin a ferroelectric domain.

  8. Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

    NASA Technical Reports Server (NTRS)

    Eskridge, Michael; Gui, Xiao; MacLeod, Todd; Ho, Fat D.

    2011-01-01

    Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.

  9. Ferroelectric nanotubes fabricated using nanowires as positive templates

    SciTech Connect

    Alexe, M.; Hesse, D.; Schmidt, V.; Senz, S.; Fan, H. J.; Zacharias, M.; Goesele, U.

    2006-10-23

    The authors report on fabrication and electrical characterization of ferroelectric nanotubes and metal-ferroelectric-metal composite nanotubes using silicon and ZnO nanowires as positive templates. Nanotubes of high aspect ratio with a minimum inner diameter of about 100 nm and a length ranging from 0.5 {mu}m to a few microns have been obtained by magnetron sputtering and/or pulsed laser deposition. Metal-ferroelectric one-dimensional structures were characterized by piezoelectric scanning probe microscopy, showing piezoelectric hysteresis loops and ferroelectric switching. The presented fabrication approach can be used to fabricate three-dimensional capacitors for ferroelectric nonvolatile memories as well as nanosize piezoelectric scanners and actuators.

  10. Giant electrocaloric effect in ferroelectric nanotubes near room temperature.

    PubMed

    Liu, Man; Wang, Jie

    2015-01-12

    Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO₃ nanotubes, which is several times in magnitude larger than that of PbTiO₃ thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering.

  11. Giant electrocaloric effect in ferroelectric nanotubes near room temperature

    PubMed Central

    Liu, Man; Wang, Jie

    2015-01-01

    Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO3 nanotubes, which is several times in magnitude larger than that of PbTiO3 thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering. PMID:25578434

  12. Business Process Re-Engineering Applied to the Air Force Institute of Technology Office of the Registrar, Records Management.

    DTIC Science & Technology

    1994-12-01

    Forms or letters that become part of the RECORD or generate actions on the RECORD. Includes: AFIT Form 68, AFIT Form 95, official transcript(s), GMAT or... GMAT test results. TRANSCRIPT - A type of OFFICIAL CORRESPONDENCE. TRANSCRIPT UPDATE RECORD - An EXISTING RECORD that requires correction due to the...transcript(s), GMAT or GRE test scores, request for evaluation letter(s), and other official correspondence. ESTABLISH OPTICAL RECORD - A child or

  13. Full first-principles simulations on 180^o ferroelectric stripe domains in realistic ferroelectric capacitors.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier; Aguado-Puente, Pablo

    2007-03-01

    The field of ferroelectric thin films is at a momentous stage. Several experimental and theoretical works, both within a phenomenological approach or atomistic models, have been devoted to ascertain the ground state of ferroelectric thin-film capacitors. Using a full first-principles density-functional-theory approach, we have simulated 180^o ferroelectric stripe domains at 0 K in SrRuO3/BaTiO3/SrRuO3 and SrRuO3/PbTiO3/SrRuO3 realistic ferroelectric capacitors epitaxially grown on a SrTiO3 substrate. For a ferroelectic thin-film 2 unit cells thick, the lateral sizes of the domains ranged from 2 to 4 unit cells. The in-plane displacement of the atoms is essential to stabilize the domain structure. A exotic vortex structure, closed by the atoms of the first metallic layer, is found for the polarization. Ph. Ghosez and J. Junquera, http://xxx.lanl.gov/pdf/cond-mat/0605299, and references therein. J. M. Soler et al., J. Phys.: Condens. Matter 14 2745 (2002)

  14. The Modification of Ferroelectric Surfaces for Catalysis

    NASA Astrophysics Data System (ADS)

    Herdiech, Matthew William

    Ferroelectrics are a class of materials in which a net dipole can be associated with each repeat unit, resulting in a potentially large electric field through the material. The ability to reversibly switch the polarization direction by applying an external electric field distinguishes ferroelectrics from polar orientations of ordinary materials. Recent studies exploring the reactivity of ferroelectric surfaces toward polar molecules have shown that the heats of adsorption for these molecules are polarization dependent, but the surfaces tend to be unreactive. Despite the inertness of ferroelectric surfaces, their use as supports for catalytically active materials could yield novel reactivity. As even metal oxides that are generally considered inert can influence the catalytic properties of supported layers, a ferroelectric support may offer the opportunity to modulate catalytic activity since charge compensation of the polar surfaces might include chemical and electronic reconstructions of the active layer. In this thesis, the fabrication of active layers with polarization dependent properties was investigated by coating ferroelectric substrates with catalytically active oxides that are likely to grow in a layer-by-layer manner. Two systems in particular were explored: chromium oxide on ferroelectric lithium niobate (Cr2O3/LiNbO3), and ruthenium oxide on ferroelectric lead zirconate titanate (RuO2/Pb(Zr0.2Ti0.8)O 3). The chromium oxide and ruthenium oxide films were characterized with X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and reflection high energy electron diffraction (RHEED). Additionally, the chromium oxide films were characterized with X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements, and the ruthenium oxide films were characterized with ion scattering spectroscopy (ISS) measurements. The reactivity of the films was investigated using temperature programmed desorption (TPD) measurements. In particular

  15. Magnetoelectric Coupling, Ferroelectricity, and Magnetic Memory Effect in Double Perovskite La3Ni2NbO9.

    PubMed

    Dey, K; Indra, A; De, D; Majumdar, S; Giri, S

    2016-05-25

    We observe ferroelectricity in an almost unexplored double perovskite La3Ni2NbO9. Ferroelectricity appears below ∼60 K, which is found to be correlated with the significant magnetostriction. A reasonably large value of spontaneous electric polarization is recorded to be ∼260 μC/m(2) at 10 K for E = 5 kV/cm, which decreases signifi- cantly upon application of a magnetic field (H), suggesting considerable magnetoelectric coupling. The dielectric permittivity is also influenced by H below the ferroelectric transition. The magnetodielectric response scales linearly to the squared magnetization, as described by the Ginzburg-Landau theory. Meticulous studies of static and dynamic features of dc magnetization and frequency dependent ac susceptibility results suggest spin-glass state below 29 K. Intrinsic magnetic memory effect is observed from zero-field cooled magnetization and isothermal remanent magnetization studies, also pointing spin-glass state below 29 K. Appearance of ferroelectricity together with a significant magnetoelectric coupling in absence of conventional long-range magnetic order is promising for searching new magnetoelectric materials.

  16. Polarization states and dielectric responses of elastically clamped ferroelectric nanocrystals

    NASA Astrophysics Data System (ADS)

    Azovtsev, A. V.; Pertsev, N. A.

    2016-12-01

    Polarization states and physical properties of ferroelectrics depend on the mechanical boundary conditions due to electrostrictive coupling between electric polarization and lattice strains. Here, we describe theoretically both equilibrium thermodynamic states and electric permittivities of ferroelectric nanocrystals subjected to the elastic three-dimensional (3D) clamping by a surrounding dielectric material. The problem is solved by the minimization of a special thermodynamic potential that describes the case of an ellipsoidal ferroelectric inclusion embedded into a linear elastic matrix. Numerical calculations are performed for BaTiO3, PbTiO3, and Pb(Zr0.5Ti0.5)O3 nanoparticles surrounded by silica glass. It is shown that, in the case of BaTiO3 and PbTiO3, elastic 3D clamping may change the order of a ferroelectric phase transition from first to second. Furthermore, the mechanical inclusion-matrix interaction shifts the temperatures of structural transitions between different ferroelectric states and even eliminates some ferroelectric phases existing in stress-free BaTiO3 and Pb(Zr0.5Ti0.5)O3 crystals. Another important effect of elastic clamping is the lowering of the symmetry of ferroelectric states in ellipsoidal inclusions, where orthorhombic and monoclinic phases may form instead of the tetragonal and rhombohedral bulk counterparts. Finally, our thermodynamic calculations show that the dielectric responses of studied perovskite ferroelectrics are sensitive to matrix-induced clamping as well. For instance, dielectric peaks occurring at structural transitions between different ferroelectric phases in BaTiO3 appear to be much higher in spherical inclusions than in the freestanding crystal. Predicted clamping-induced enhancement of certain dielectric responses at room temperature indicates that composite materials comprising nanocrystals of perovskite ferroelectrics are promising for device applications requiring the use of high-permittivity dielectrics.

  17. Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor

    NASA Astrophysics Data System (ADS)

    Mehta, Hema; Kaur, Harsupreet

    2016-09-01

    In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon. A complete drain current model has been developed by using Landau-Khalatnikov equation and parabolic potential approximation to analyze device behavior in different operating regions. It has been demonstrated that DGFJL transistor acts as a step-up voltage transformer and exhibits subthreshold slope values less than 60 mV/dec. In order to assess the advantages offered by the proposed device, extensive comparative study has been done with equivalent Double Gate Junctionless Transistor (DGJL) transistor with gate insulator thickness same as ferroelectric gate stack thickness of DGFJL transistor. It is shown that incorporation of ferroelectric layer can overcome the variability issues observed in JL transistors. The device has been studied over a wide range of parameters and bias conditions to comprehensively investigate the device design guidelines to obtain a better insight into the application of DGFJL as a potential candidate for future technology nodes. The analytical results so derived from the model have been verified with simulated results obtained using ATLAS TCAD simulator and a good agreement has been found.

  18. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

    SciTech Connect

    Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Mueller, A. H.; Ramesh, R.

    1999-08-30

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

  19. Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Xiao, Juanxiu; Wang, Jingxian; Zhang, Lei; Deng, Jinyu; Liu, Ziyan; Dong, Zhili; Wang, John; Chen, Jingsheng

    2016-06-01

    Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

  20. High-efficient and high-content cytotoxic recording via dynamic and continuous cell-based impedance biosensor technology.

    PubMed

    Hu, Ning; Fang, Jiaru; Zou, Ling; Wan, Hao; Pan, Yuxiang; Su, Kaiqi; Zhang, Xi; Wang, Ping

    2016-10-01

    Cell-based bioassays were effective method to assess the compound toxicity by cell viability, and the traditional label-based methods missed much information of cell growth due to endpoint detection, while the higher throughputs were demanded to obtain dynamic information. Cell-based biosensor methods can dynamically and continuously monitor with cell viability, however, the dynamic information was often ignored or seldom utilized in the toxin and drug assessment. Here, we reported a high-efficient and high-content cytotoxic recording method via dynamic and continuous cell-based impedance biosensor technology. The dynamic cell viability, inhibition ratio and growth rate were derived from the dynamic response curves from the cell-based impedance biosensor. The results showed that the biosensors has the dose-dependent manners to diarrhetic shellfish toxin, okadiac acid based on the analysis of the dynamic cell viability and cell growth status. Moreover, the throughputs of dynamic cytotoxicity were compared between cell-based biosensor methods and label-based endpoint methods. This cell-based impedance biosensor can provide a flexible, cost and label-efficient platform of cell viability assessment in the shellfish toxin screening fields.

  1. Benefits and Risks of Electronic Medical Record (EMR): An Interpretive Analysis of Healthcare Consumers' Perceptions of an Evolving Health Information Systems Technology

    ERIC Educational Resources Information Center

    Thompson, Chester D.

    2013-01-01

    The purpose of this study is to explore healthcare consumers' perceptions of their Electronic Medical Records (EMRs). Although there have been numerous studies regarding EMRs, there have been minimal, if any, research that explores healthcare consumers' awareness of this technology and the social implications that result. As consumers' health…

  2. Ferroelectric domain gratings and Barkhausen spikes in potassium lithium tantalate niobate

    SciTech Connect

    Tong, X.; Yariv, A.; Zhang, M.; Agranat, A.J.; Hofmeister, R.; Leyva, V.

    1997-04-01

    The observation of Barkhausen current spikes during the recording of volume phase holograms in potassium lithium tantalate niobate is reported on. These spikes are due to the ferroelectric domain reversal induced by photorefractive space charge fields. Both {open_quotes}small{close_quotes} (1 nA) and {open_quotes}large{close_quotes} (100 nA) spikes are observed, which correspond to micro and macro domain reversal, respectively. The diffraction efficiency can change as much as 50{percent} during a single macrodomain switching. {copyright} {ital 1997 American Institute of Physics.}

  3. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  4. A lead-halide perovskite molecular ferroelectric semiconductor.

    PubMed

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D; Xiong, Ren-Gen

    2015-05-29

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm(-2) and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics.

  5. A lead-halide perovskite molecular ferroelectric semiconductor

    PubMed Central

    Liao, Wei-Qiang; Zhang, Yi; Hu, Chun-Li; Mao, Jiang-Gao; Ye, Heng-Yun; Li, Peng-Fei; Huang, Songping D.; Xiong, Ren-Gen

    2015-01-01

    Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm−2 and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics. PMID:26021758

  6. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  7. Unravelling and controlling hidden imprint fields in ferroelectric capacitors

    PubMed Central

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-01-01

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. PMID:27122309

  8. Nanoscale probing and photonic applications of ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Tian, Lili

    Ferroelectrics are a versatile solid-state platform for a new generation of micro- and nanophotonic applications. Conventional integrated optics has often treated the phenomenon of ferroelectric domains and domain walls more as a nuisance rather than an asset. Ironically, domain walls can be immensely valuable in realizing a wide variety of new functionalities such as laser scanning, dynamic focusing, frequency conversion, beam shaping, waveguiding, high-speed modulation, and photonic crystal structures. All of these functions can be realized by shaping ferroelectric domain walls into arbitrary shapes on micro to nanoscale dimensions. Domain walls, however, have a mind of their own when it comes to shaping them. This thesis will focus on the fundamental domain switching characteristics under the uniform electrical fields, and local electromechanical response across the single ferroelectric domain wall in ferroelectric crystals lithium niobate, lithium tantalate and strontium barium niobate. The local electromechanical response across the single was modeled using finite element method to better understand the fundamentals of piezoelectric force microscopy in order to quantitatively interpret the measured material properties. The influence of stoichiometry on domain dynamics on macroscale and on local electromechanical properties on nanoscale was studied. The challenges in shaping ferroelectric domain are discussed and the examples of optical devices such as optical switch and optical beam deflector based on ferroelectric domain walls are presented.

  9. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    DOE PAGES

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; ...

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up tomore » 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.« less

  10. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    SciTech Connect

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up to 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.

  11. Unravelling and controlling hidden imprint fields in ferroelectric capacitors.

    PubMed

    Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

    2016-04-28

    Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

  12. Less Contact Ballistogram Recording during Sleep as a Perspective Technology for the Medical Monitoring System in a Mission to Mars

    NASA Astrophysics Data System (ADS)

    Baevsky, R. M.; Bogomolov, V. V.; Funtova, I. I.

    strong argument for success of a future Martian mission is absence of pathologies developed in cosmonauts following one-year or longer space flights that might forbid further gradual extension of piloted missions. However, functional shifts in the neurohormonal regulation revealed during the long-term Mir missions suggest that homeostasis of the vital important body systems is maintained owing to active functioning of the regulatory mechanisms (Grigoriev A.I. et al., 1998). Since overstrain of these mechanisms constitutes one of the main factors of risk of diseases, it is important to provide unfailing and systematic monitoring of the body regulation functional reserves. night ballistocardiography, made it possible to obtain data on super-slow heart rhythm fluctuations reflective of activation of the neurohormonal regulation (Baevsky R.M. et al., 1999). Analysis of the data showed that on a background of extended exposure of the human organism to various stressful factors the cardiovascular homeostasis is maintained through consecutive recruitment in adaptation of higher levels of regulation of the physiological systems (Grigoriev A.I., Baevsky R.M., 2001). This validates the hypothesis concerning the role of the higher autonomous centers in long-term adaptation to the spaceflight factors and opens up the new way to diagnosis and prediction of the human body functional reserves. It was first demonstrated in space during the Mir primary mission 9 in 1991. Sensor-accelerometer secured to cosmonaut's sleeping bag registered micromovements conditioned by the heart, respiratory and motor activities of a sleeping cosmonaut. The joint Russian-Austrian space investigations in 1992-1995 resulted in technology refinement and enhancement. Advantages of medical monitoring during sleep are obvious not only because of the time saving and opportunity to receive systematically information pertaining to the crew health. Records allow, to begin with, evaluate the functional state in

  13. Functional ferroelectric tunnel junctions on silicon

    NASA Astrophysics Data System (ADS)

    Guo, Rui; Wang, Zhe; Zeng, Shengwei; Han, Kun; Huang, Lisen; Schlom, Darrell G.; Venkatesan, T.; Ariando; Chen, Jingsheng

    2015-07-01

    The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the “universal memory”. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.

  14. Ferroelectric Liquid Crystals In Aerodynamic Testing

    NASA Technical Reports Server (NTRS)

    Parmar, Devendra S.; Holmes, Harlan K.

    1994-01-01

    The process of simultaneous optical visualization and quantitative measurement of aerodynamic boundary layer parameters requires new concepts, materials and utilization methods. Measurement of shear stress in terms of the transmitted or the reflected light intensity from an aligned ferroelectric liquid crystal (FLC) thin (approx. 1 micron) film deposited on a glass substrate has been the first step in this direction. In this paper, recent progress in utilization of FLC thin films for skin friction measurement and for studying the state of the boundary layer in a wind tunnel environment is reviewed. The switching characteristics of FLCs have been used to measure pressure from the newly devised system of partially exposed polymer dispersed ferroelectric liquid crystals (PEPDFLCs). In this configuration, a PEPDFLC thin film (approx. 10-25 microns) is sandwiched between two transparent conducting electrodes, one a rigid surface and the other a flexible sheet such as polyvinylidene fluoride or mylar. The switching characteristics of the film are a function of the pressure applied to the flexible transparent electrode and a predetermined bias voltage across the two electrodes. The results, considering the dielectrics of composite media, are discussed.

  15. Improper ferroelectricity: A theoretical and experimental investigation

    NASA Astrophysics Data System (ADS)

    Hardy, J. R.; Ullman, F. G.

    1984-02-01

    A combined theoretical and experimental study has been made of the origins and properties of the improper ferroelectricity associated with structural modulations of non-zero wavelengths. Two classes of materials have been studied: rare earth molybdates (specifically, gadolinium molybdate: GMO), and potassium selenate and its isomorphs. In the former, the modulation is produced by a zone boundary phonon instability, and in the latter by the instability of a phonon of wave vector approximately two-thirds of the way to the zone-boundary. In the second case the initial result is a modulated structure whose repeat distance is not a rational multiple of the basic lattice repeat distance. This result is a modulated polarization which, when the basic modulation locks in to a rational multiple of the lattice spacing, becomes uniform, and improper ferroelectricity results. The origins of these effects have been elucidated by theoretical studies, initially semi-empirical, but subsequently from first-principles. These complemented the experimental work, which primarily used inelastic light scattering, uniaxial stress, and hydrostatic pressure, to probe the balance between the interionic forces through the effects on the phonons and dielectric properties.

  16. Prediction of a native ferroelectric metal

    PubMed Central

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-01-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity—that is, the existence of a switchable intrinsic electric polarization—has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound. PMID:27040076

  17. Molecular Dynamics Simulations of Ferroelectric Phase Transitions

    NASA Astrophysics Data System (ADS)

    Yu, Rici; Krakauer, Henry

    1997-03-01

    Based on an analysis of the wavevector dependence of the lattice instabilities in KNbO_3, we proposed a real-space chain-like instability and a scenario of sequential freezing out or onset of coherence of these instabilities, which qualitatively explains the sequence of observed temperature-dependent ferroelectric phases.(R. Yu and H. Krakauer, Phys. Rev. Lett. 74), 4067 (1995). We suggested that this chain-like instability should also be found in BaTiO_3, and this has been subsequently confirmed by Ghosez et al.(P. Ghosez et al.), Proc. 4th Williamsburg Workshop on First-Principles Calculations for Ferroelectrics, to be published We will present molecular dynamics simulations on BaTiO_3, using effective Hamiltonians constructed from first-principles calculations,(W. Zhong, D. Vanderbilt, and K. M. Rabe, Phys. Rev. Lett. 73), 1861 (1994). that reproduce the essential features of diffuse x-ray scattering measurements in the cubic, tetragonal, orthorhombic, and rhombohedral phases. The good agreement supports the interpretation of real-space chain-formation. Simulations for KNbO3 may also be reported.

  18. Ferroelectric based catalysis: Switchable surface chemistry

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  19. Electrocaloric effect in ferroelectric nanowires from atomistic simulations

    NASA Astrophysics Data System (ADS)

    Herchig, R.; Chang, C.-M.; Mani, B. K.; Ponomareva, I.

    2015-11-01

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed.

  20. Electrocaloric effect in ferroelectric nanowires from atomistic simulations

    PubMed Central

    Herchig, R.; Chang, C.-M.; Mani, B. K.; Ponomareva, I.

    2015-01-01

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed. PMID:26612267

  1. Electrocaloric effect in ferroelectric nanowires from atomistic simulations.

    PubMed

    Herchig, R; Chang, C-M; Mani, B K; Ponomareva, I

    2015-11-27

    Electrocaloric effect is presently under active investigation owing to both the recent discoveries of giant electrocaloric effects and its potential for solid state cooling applications. We use first-principles-based direct simulations to predict the electrocaloric temperature change in ferroelectric ultrathin nanowires. Our findings suggest that in nanowires with axial polarization direction the maximum electrocaloric response is reduced when compared to bulk, while the room temperature electrocaloric properties can be enhanced by tuning the ferroelectric transition temperature. The potential of ferroelectric nanowires for electrocaloric cooling applications is discussed.

  2. High temperature coefficient of resistance for a ferroelectric tunnel junction

    SciTech Connect

    Zhao, Xiaolin; Tian, Bobo; Liu, Bolu; Wang, Xudong; Huang, Hai; Wang, Jianlu E-mail: xjmeng@mail.sitp.ac.cn; Zou, Yuhong; Sun, Shuo; Lin, Tie; Han, Li; Sun, Jinglan; Meng, Xiangjian E-mail: xjmeng@mail.sitp.ac.cn; Chu, Junhao

    2015-08-10

    An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

  3. Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

    NASA Technical Reports Server (NTRS)

    Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

    1998-01-01

    Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

  4. The Effect of Using Mobile Technology-Based Methods That Record Food or Nutrient Intake on Diabetes Control and Nutrition Outcomes: A Systematic Review.

    PubMed

    Porter, Judi; Huggins, Catherine E; Truby, Helen; Collins, Jorja

    2016-12-17

    (1) Background: Mobile technologies may be utilised for dietary intake assessment for people with diabetes. The published literature was systematically reviewed to determine the effect of using mobile electronic devices to record food or nutrient intake on diabetes control and nutrition outcomes; (2) Methods: The review protocol was registered with PROSPERO: registration number CRD42016050079, and followed PRISMA guidelines. Original research of mobile electronic devices where food or nutrient intake was recorded in people with diabetes with any treatment regimen, and where this intervention was compared with usual care or alternative treatment models, was considered. Quality was assessed using the Quality Criteria Checklist for Primary Research; (3) Results: Nine papers formed the final library with a range of interventions and control practices investigated. The food/nutrient intake recording component of the intervention and patient engagement with the technology was not well described. When assessed for quality, three studies rated positive, five were neutral and one negative. There was significantly greater improvement in HbA1c in the intervention group compared to the control group in four of the nine studies; (4) Conclusion: Based on the available evidence there are no clear recommendations for using technology to record dietary data in this population.

  5. The Effect of Using Mobile Technology-Based Methods That Record Food or Nutrient Intake on Diabetes Control and Nutrition Outcomes: A Systematic Review

    PubMed Central

    Porter, Judi; Huggins, Catherine E.; Truby, Helen; Collins, Jorja

    2016-01-01

    (1) Background: Mobile technologies may be utilised for dietary intake assessment for people with diabetes. The published literature was systematically reviewed to determine the effect of using mobile electronic devices to record food or nutrient intake on diabetes control and nutrition outcomes; (2) Methods: The review protocol was registered with PROSPERO: registration number CRD42016050079, and followed PRISMA guidelines. Original research of mobile electronic devices where food or nutrient intake was recorded in people with diabetes with any treatment regimen, and where this intervention was compared with usual care or alternative treatment models, was considered. Quality was assessed using the Quality Criteria Checklist for Primary Research; (3) Results: Nine papers formed the final library with a range of interventions and control practices investigated. The food/nutrient intake recording component of the intervention and patient engagement with the technology was not well described. When assessed for quality, three studies rated positive, five were neutral and one negative. There was significantly greater improvement in HbA1c in the intervention group compared to the control group in four of the nine studies; (4) Conclusion: Based on the available evidence there are no clear recommendations for using technology to record dietary data in this population. PMID:27999302

  6. Conducting Ferroelectric Walls, Domain Topology, and Domain Switching Kinetics in a Hybrid Improper Ferroelectric

    NASA Astrophysics Data System (ADS)

    Cheong, Sang-Wook; Rutgers CenterEmergent Materials Team

    Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO 3 /SrTiO 3 , across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric domain walls can be highly conducting but energetically unfavored; however, they were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr) 3 Ti 2 O 7 single crystals. From the exploration of antiphase domain boundaries, which are hidden in piezoresponse force microscopy, using dark-field electron microscopy, we have explored the macroscopic topology of polarization domains and antiphase domains. We found that the macroscopic domain topology is directly responsible for the presence of charged domain walls, and is closely related with the polarization domain switching mechanism in (Ca,Sr) 3 Ti 2 O 7 . Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.

  7. Lattice-based Monte Carlo simulations of the electrocaloric effect in ferroelectrics and relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ma, Yang-Bin; Albe, Karsten; Xu, Bai-Xiang

    2015-05-01

    Canonical and microcanonical Monte Carlo simulations are carried out to study the electrocaloric effect (ECE) in ferroelectrics and relaxor ferroelectrics (RFEs) by direct computation of field-induced temperature variations at the ferroelectric-to-paraelectric phase transition and the nonergodic-to-ergodic state transformation. A lattice-based Hamiltonian is introduced, which includes a thermal energy, a Landau-type term, a dipole-dipole interaction energy, a gradient term representing the domain-wall energy, and an electrostatic energy contribution describing the coupling to external and random fields. The model is first parametrized and studied for the case of BaTiO3. Then, the ECE in RFEs is investigated, with particular focus on the influence of random fields and domain-wall energies. If the strength or the density of the random fields increases, the ECE peak shifts to a lower temperature but the temperature variation is reduced. On the contrary, if the domain-wall energy increases, the peak shifts to a higher temperature and the ECE becomes stronger. In RFEs, the ECE is maximum at the freezing temperature where the nonergodic-to-ergodic transition takes place. Our results imply that the presence of random fields reduces the entropy variation in an ECE cycle by pinning local polarization.

  8. Effects of the poling process on dielectric, piezoelectric, and ferroelectric properties of lead zirconate titanate

    NASA Astrophysics Data System (ADS)

    Prewitt, Anderson D.

    Smart materials are widely used in many of today's relevant technologies such as nano and micro electromechanical systems (NEMS and MEMS), sensors, actuators, nonvolatile memory, and solid state devices. Many of these systems rely heavily on the electromechanical properties of certain smart materials, such as piezoelectricity and ferroelectricity. By definition, piezoelectricity is a mechanical stress in a material that produces an electric displacement (known as the direct piezoelectric effect) or electrical charge in a material which produces a mechanical strain (known as the converse piezoelectric effect). Ferroelectricity is a sub-class of piezoelectricity in which the polarization occurs spontaneously and the dipoles can be reoriented. Domain walls are the nanoscale regions separating two finite distinctively polarized areas in a ferroelectric. The reorientation of polarization in a material is called the poling process and many factors can influence the effectiveness of this process. A more fundamental understanding of how electrical and mechanical loading changes the domain structure of these materials could lead to enhanced properties such as increased energy transduction and decreased nonlinear behavior. This research demonstrates the influence of mechanical pressure and electrical field during and after the poling process on domain walls. The effects of strong mechanical forces on large-scale domain switching and weak cyclic forces on small-scale domain wall motion are investigated to show how they affect the macroscopic behavior of these materials. Commercial lead zirconate titanate ceramics were studied under various poling conditions and the effect of domain wall motion on the piezoelectric, dielectric, and ferroelectric properties was investigated. Polarization and strain measurements from samples poled at specific conditions and converse piezoelectric coefficient and dielectric permittivity data was extracted and interpreted in the context of

  9. Dielectric and Elastic Properties of Mixed Ferroelectric Material Potassium TANTALUM(1-X) Niobium(x) Oxide

    NASA Astrophysics Data System (ADS)

    Wang, Xiaomei

    Ferroelectricity is one of the important fields in solid state physics because of its scientific and technological significance. This dissertation describes dielectric and elastic properties of the ferroelectric system KTa_{1-x}Nb_{x}O _3 (KTN) with niobium in the concentration range 1.2% ~ 16%. The occurrence and the nature of the phase transition in mixed ferroelectric systems is an intriguing topic due to the introduction of configurational disorder. Experimental results have shown that the critical temperature T _{c} in the KTN system strongly depends on the concentration of Nb and that the transverse optic soft mode frequency decreases as the concentration of Nb increases. However, the origin of the phase transition in this system is not clearly known. In particular, it is not yet clear whether or not the transition is driven by a soft mode and how the nature of the transition evolves as the Nb concentration is changed. This dissertation describes experimental work on the dielectric and elastic behaviors of the KTN system. The results on the linear and the nonlinear dielectric constants and on the electric polarization of KTN reveal (a) the occurrence of a structural transition with the appearance of ferroelectric macroregions at T_{c }, even for relatively low impurity concentrations (b) the presence of polar microregions significantly above T_{c}. The phase transition in KTN is driven by the interaction between effective dipolar moments d* rather than a soft mode. Our experimental results also reveal the coexistence of both dipolar glass like and ferroelectric behaviors in KTN with low Nb concentrations. Elastic results obtained on KTN provide direct evidence of the two distinct stages which the transition go through when approaching the critical temperature T _{c}. The ultrasonic measurements of the longitudinal elastic constant C_ {11} shows the softening of C _{11} with a (T-T_ {c})^{-mu} dependence at intermediate temperature in the first stage. In the

  10. Fast Ferroelectric L-Band Tuner for ILC Cavities

    SciTech Connect

    Hirshfield, Jay L

    2010-03-15

    Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

  11. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    SciTech Connect

    Zhao, X. L.; Wang, J. L. E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T. E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H.

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  12. Analyzing piezoresponse force microscopy for reconstruction of probed ferroelectric structures

    NASA Astrophysics Data System (ADS)

    Pan, K.; Liu, Y. Y.; Liu, Y. M.; Li, J. Y.

    2012-09-01

    Piezoresponse force microscopy (PFM) has emerged as the tool of choice for characterizing piezoelectric and ferroelectric materials at nanoscale, yet the interpretation of PFM remains to be difficult and sometimes ambiguous. Built on earlier works, we developed a numerical integration scheme to analyze the expected PFM response in ferroelectrics with arbitrary domain configurations, with the ultimate goal to accurately reconstruct the underlying ferroelectric structure from PFM measurements. Using such technique, we demonstrated that the relationship between the effective and intrinsic piezoelectric coefficients is sensitive to a variety of factors that are intrinsic to the probed materials, and showed that the PFM mapping is not only influenced by polarization distribution on the sample surface but also three-dimensional polarization distribution inside the material. While relatively simple domain structures were used for demonstration, the approach is general, and can be applied to ferroelectrics with arbitrary polarization distributions.

  13. Growth and characterization of organic ferroelectric croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Enders, Axel; Gruverman, Alexei; Xu, Xiaoshan

    Using vapor phase evaporation, we have studied the growth of the croconic acid (CCA) thin films, at various conditions such as temperature, thickness, growth speed, and substrates. The morphology of thin film was measured by atomic force microscopy (AFM); the ferroelectric property was confirmed by piezoresponse force microscopy (PFM). A critical thickness of 40 nm and optimal temperature of -30 celsius were found for continuous films, while the substrate and growth speed are found to play a minimal role. According to the reflection high energy electron diffraction (RHEED), the CCA films are polycrystalline. For a 40 nm continuous film, the roughness is about 3 nm, while the coercive voltage for the ferroelectric domain switching is approximately 7V. This is the first molecule ferroelectric thin film. The successful growth of continuous CCA films enhances the applications potential of CCA, which is a molecular crystal of ferroelectricity. Supported by NSF through UNL MRSEC (DMR-1420645).

  14. Relaxation Dynamics of Ferroelectric Liquid Crystals in Pulsed Electric Field

    NASA Astrophysics Data System (ADS)

    Kudreyko, A. A.; Migranov, N. G.; Migranova, D. N.

    2016-11-01

    In this contribution we report a theoretical study of relaxation processes in surface-stabilized ferroelectric liquid crystals with spontaneous polarization. The influence of pulsed electric field on the behavior of ferroelectric liquid crystal in the SmC* phase, which is placed in a thin cell with strong anchoring of SmC* molecules with the boundary substrate, is studied. In the vicinity of the substrate interface, temporal dependence of the azimuthal motion of the director induced by electric field is obtained. The response to the external distortion of ferroelectric liquid crystal confined between two microstructured substrates is the occurrence of periodic temporal formation of solitons connected with the distortion of the director field n in the sample bulk. The interplay between microstructured substrates and director distribution of the ferroelectric SmC* phase is explained by the Frenkel-Kontorova model for a chain of atoms, but adapted for the continuum problem.

  15. New ferroelectrics based on divalent metal ion alum.

    PubMed

    Zhang, Wen; Chen, Li-Zhuang; Xiong, Ren-Gen; Nakamura, Takayoshi; Huang, Songping D

    2009-09-09

    A detailed study of two alum-type complexes containing the SeO(4)(2-) anion, 1,4-diazoniabicyclo[2.2.2]octane hexaaquacopper(II) bis(selenate) [(H(2)dbco)Cu(H(2)O)(6)(SeO(4))(2), 1] and its deuterated analogue (D(2)dbco)Cu(D(2)O)(6)(SeO(4))(2) (2), has revealed that 1 and 2 are new ferroelectrics that undergo a paraelectric-ferroelectric phase transition at ca. -140 to -138 degrees C as a result of order-disorder features of the cation ([H(2)dbco](2+) or [D(2)dbco](2+)) and anion (selenate). These are the first examples of ferroelectrics based on divalent metal anion alum analogues since the discovery of ferroelectrics based on trivalent metal anion alum in approximately 1960.

  16. Ferroelectricity in high-density H2O ice

    DOE PAGES

    Caracas, Razvan; Hemley, Russell J.

    2015-04-01

    The origin of longstanding anomalies in experimental studies of the dense solid phases of H2O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. Here, the presence of local electric fields triggers the preferential parallel orientation of the water moleculesmore » in the structure, which could be stabilized in bulk using new high-pressure techniques.« less

  17. Ferroelectricity in high-density H2O ice.

    PubMed

    Caracas, Razvan; Hemley, Russell J

    2015-04-07

    The origin of longstanding anomalies in experimental studies of the dense solid phases of H2O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. The presence of local electric fields triggers the preferential parallel orientation of the water molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.

  18. Performance of thin-film ferroelectric capacitors for EMC decoupling.

    PubMed

    Li, Huadong; Subramanyam, Guru

    2008-12-01

    This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.

  19. Technology and Career Preparation: Using Virtual Interview Recordings (VIRs) in an Apparel, Design, and Textiles (ADT) Professional Seminar Course

    ERIC Educational Resources Information Center

    Eike, Rachel J.; Rowell, Amy; Mihuta, Tiffani

    2016-01-01

    The purpose of this study was to identify key virtual-recorded interview (VIR) skills that are essential to Apparel, Design, and Textile (ADT) student performance. The virtual, computer-recording interview platform, InterviewStream, was used as the data collection instrument in this qualitative, exploratory case study. Virtual interviews have been…

  20. A qualitative study of the attitudes of patients and staff to the use of mobile phone technology for recording and gathering asthma data.

    PubMed

    Cleland, Jennifer; Caldow, Jan; Ryan, Dermot

    2007-01-01

    Linking mobile phone technology with electronic data collection may facilitate the research experience and improve compliance. We conducted a qualitative interview study using a purposeful sample of 10 patients with asthma and two research staff. Patient diary information was collected twice a day using an electronic peak flow meter linked to a mobile phone with an interactive screen to record current asthma symptoms transmitted to, and stored in, a server. An analysis of the interview data identified key technological adjustments and support factors which would improve the application of the technology in future clinical trials. Patients and staff believed that mobile phone technology would be useful in clinical practice as well as research. Its main uses were seen as identifying poor control more quickly and facilitating communication with healthcare professionals without the need for face-to-face consultation. There was a high degree of acceptability to both patients and staff.

  1. Few-Volt Operation of Printed Organic Ferroelectric Capacitor.

    PubMed

    Noda, Yuki; Yamada, Toshikazu; Kobayashi, Kensuke; Kumai, Reiji; Horiuchi, Sachio; Kagawa, Fumitaka; Hasegawa, Tatsuo

    2015-11-04

    The fabrication of single-crystalline thin-film arrays for an organic ferroelectric small molecule is achieved by a simple solution process without additional thermal annealing. Based on a cooperative proton tautomerism through a hydrogen-bonding network, films show the polarity switching with an operating voltage of less than 5 V at room temperature. This approach provides a low-cost and eco-friendly fabrication of ferroelectric devices.

  2. Multifunctional Nanofibers Comprised of Conducting and Ferroelectric Polymer Composites

    DTIC Science & Technology

    2015-08-04

    Structure characterization and stress shearing effects on the organic ferroelectric polymer P(VDF-TrFE)” (2012) 3) F. Wong, D. Colon, G. Perez, M...Bonilla and L.G. Rosa, “Band bending on polymer blens of the organic semiconducting polymer P3HT and the organic ferroelectric” (2012). 4) A. Rosado...Fabrication of the Ferroelectric Polymer PVDF Thin Films by AFM Rosette Gonzalez.  Stress Shearing Effects on the Polarization of the Organic

  3. Experimental investigation of the electrocaloric response in ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Es'kov, A. V.; Belyavskii, P. Yu.; Anokhin, A. S.; Pakhomov, O. V.; Semenov, A. A.; Myl'nikov, I. L.; Nikitin, A. A.; Bui, M. T.; Cherkasskii, M. A.; Plotnikov, V. V.

    2016-07-01

    We have analyzed the electrocaloric response in ferroelectric materials in nonequilibrium thermal conditions. The temperature dependences of the electrocaloric response during polarization and depolarization of ferroelectric samples based on solid solutions of barium-strontium titanate and lead magnoniobate-titanate are considered. The difference in the electrocaloric responses for polarization and depolarization, which can be as large as 5 mK, has been demonstrated experimentally.

  4. Diffuse Scattering from Lead-Containing Ferroelectric Perovskite Oxides

    DOE PAGES

    Goossens, D. J.

    2013-01-01

    Ferroelectric materials rely on some type of non-centrosymmetric displacement correlations to give rise to a macroscopic polarisation. These displacements can show short-range order (SRO) that is reflective of the local chemistry, and so studying it reveals important information about how the structure gives rise to the technologically useful properties. A key means of exploring this SRO is diffuse scattering. Conventional structural studies use Bragg peak intensitiesto determine the average structure. In a single crystal diffuse scattering (SCDS) experiment, the coherent scattered intensity is measured at non-integer Miller indices, and can be used to examine the population of local configurations. Thismore » is because the diffuse scattering is sensitive to two-body averages, whereas the Bragg intensity gives single-body averages. This review outlines key results of SCDS studies on several materials and explores the similarities and differences in their diffuse scattering. Random strains are considered, as are models based on a phonon-like picture or a more local-chemistry oriented picture. Limitations of the technique are discussed.« less

  5. Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

    NASA Astrophysics Data System (ADS)

    Paul, Amitesh; Reitinger, Christoph; Autieri, Carmine; Sanyal, Biplab; Kreuzpaintner, Wolfgang; Jutimoosik, Jaru; Yimnirun, Rattikorn; Bern, Francis; Esquinazi, Pablo; Korelis, Panagiotis; Böni, Peter

    2014-07-01

    Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO3) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μB/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO3 layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic moments in the inner ferromagnetic layers.

  6. Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

    SciTech Connect

    Paul, Amitesh Reitinger, Christoph; Kreuzpaintner, Wolfgang; Böni, Peter; Autieri, Carmine; Sanyal, Biplab; Jutimoosik, Jaru; Yimnirun, Rattikorn; Bern, Francis; Esquinazi, Pablo; Korelis, Panagiotis

    2014-07-14

    Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO{sub 3}) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μ{sub B}/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO{sub 3} layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic moments in the inner ferromagnetic layers.

  7. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    NASA Astrophysics Data System (ADS)

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-01

    Conducting characteristics of topological defects in ferroelectric materials, such as charged domain walls, engendered a broad interest on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics still remains full of unanswered questions and becomes yet more relevant over the growing interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up to 10-fold local enhancement of electric field realized by large polarization gradient and over-polarization effects due to inherent non-linear dielectric properties of Pb(Zr0.2Ti0.8)O3. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The observed field enhancement can be considered on similar grounds as increased doping level, giving rise to reduced switching bias and threshold voltages for charge injection, electrochemical and photoelectrochemical processes.

  8. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    SciTech Connect

    Cao, Ye; Ievlev, Anton V.; Kalinin, Sergei V.; Maksymovych, Petro; Morozovska, Anna N.; Chen, Long-Qing

    2015-07-13

    Conducting characteristics of topological defects in ferroelectric materials, such as charged domain walls, engendered a broad interest on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics still remains full of unanswered questions and becomes yet more relevant over the growing interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}) junction in applied electric field. We revealed an up to 10-fold local enhancement of electric field realized by large polarization gradient and over-polarization effects due to inherent non-linear dielectric properties of Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The observed field enhancement can be considered on similar grounds as increased doping level, giving rise to reduced switching bias and threshold voltages for charge injection, electrochemical and photoelectrochemical processes.

  9. Topological Point Defects in Relaxor Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nahas, Y.; Prokhorenko, S.; Kornev, I.; Bellaiche, L.

    2016-03-01

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba (Zr0.5 Ti0.5 )O3 (BZT) and Pb (Sc0.5 Nb0.5 )O3 (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  10. Spatial Rogue Waves in Photorefractive Ferroelectrics.

    PubMed

    Pierangeli, D; Di Mei, F; Conti, C; Agranat, A J; DelRe, E

    2015-08-28

    Rogue waves are observed as light propagates in the extreme nonlinear regime that occurs when a photorefractive ferroelectric crystal is undergoing a structural phase transition. The transmitted spatial light distribution contains bright localized spots of anomalously large intensity that follow a signature long-tail statistics that disappears as the nonlinearity is weakened. The isolated wave events form as out-of-equilibrium response and disorder enhance the Kerr-saturated nonlinearity at the critical point. Self-similarity associable to the individual observed filaments and numerical simulations of the generalized nonlinear Schrödinger equation suggests that dynamics of soliton fusions and scale invariance can microscopically play an important role in the observed rogue intensities and statistics.

  11. Fabrication and Characterization of Ferroelectric Gate Field-Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction

    NASA Astrophysics Data System (ADS)

    Lee, Bong Yeon; Minami, Takaki; Kanashima, Takeshi; Okuyama, Masanori

    2006-11-01

    A new type of ferroelectric gate field-effect transistor (FET) using ferroelectric-insulator interface conduction has been proposed. Drain current flows along the interface between the ferroelectric and insulator layers and requires no semiconductor. The channel region of the FET is composed of a Pt/insulator HfO2/ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT)/Pt/TiO2/SiO2/Si multilayer, and the source and drain areas are formed at the interface of the PZT and HfO2 films. Drain current versus gate voltage characteristics show a clockwise hysteresis loop similar to that for a conventional p-channel transistor. The FET shows that the on/off ratio of the conduction current is within 105 to 106 and that the off-state current is about 10-10 A.

  12. Nanoscale studies of switching behavior of ferroelectric thin films by using piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Wu, Dong

    The work presented in this dissertation is focused on the study of ferroelectric thin films using the method of Piezo-response Force Microscopy (PFM) with several modifications specific to ferroelectrics. In this research, the main motivation is the study of polarization-reversal mechanisms for different sizes of very small-scale (0.5-5 mum size) ferroelectric capacitors in possible applications to ferroelectric random-access-memory devices (FeRAM). In order to make such FeRAM devices more competitive with other types of nonvolatile memory technologies such as phase-change random access memory (PRAM) and magneto-resistive random access memory (MRAM), etc., it is necessary to increase the integration density and therefore reduce bit-cell size. This in turn requires a detailed understanding of (and therefore studies of) the switching properties of small-scale ferroelectric capacitors at the micrometer and sub-micrometer size scale. With traditional methods such as the polarization-hysteresis-loop measurement and the transient-switching-current measurement, such switching properties at the sub-micrometer or nanometer scale are difficult to obtain. This is due to the difficulty of electrically contacting each individual capacitor and also due to the drastically reduced electric signal at such a small scale. In addition, these methods do not provide needed spatially-resolved information about local switching. By using different experimental approaches based on PFM, all of these problems were solved and now one can directly study the switching behavior of these ferroelectric capacitors (as shown in this thesis) through observing and quantifying their PFM images. Also this thesis also presents a detailed description of PFM theory as well as the modified PFM experimental setup. In this thesis we present studies of ferroelectric thin films of two different types: polycrystalline and epitaxial. Each film has a different texture and therefore different interface defects which

  13. Incorporating 3D-printing technology in the design of head-caps and electrode drives for recording neurons in multiple brain regions

    PubMed Central

    DeLucca, Michael V.; Haufler, Darrell; Paré, Denis

    2015-01-01

    Recent advances in recording and computing hardware have enabled laboratories to record the electrical activity of multiple brain regions simultaneously. Lagging behind these technical advances, however, are the methods needed to rapidly produce microdrives and head-caps that can flexibly accommodate different recording configurations. Indeed, most available designs target single or adjacent brain regions, and, if multiple sites are targeted, specially constructed head-caps are used. Here, we present a novel design style, for both microdrives and head-caps, which takes advantage of three-dimensional printing technology. This design facilitates targeting of multiple brain regions in various configurations. Moreover, the parts are easily fabricated in large quantities, with only minor hand-tooling and finishing required. PMID:25652930

  14. Incorporating 3D-printing technology in the design of head-caps and electrode drives for recording neurons in multiple brain regions.

    PubMed

    Headley, Drew B; DeLucca, Michael V; Haufler, Darrell; Paré, Denis

    2015-04-01

    Recent advances in recording and computing hardware have enabled laboratories to record the electrical activity of multiple brain regions simultaneously. Lagging behind these technical advances, however, are the methods needed to rapidly produce microdrives and head-caps that can flexibly accommodate different recording configurations. Indeed, most available designs target single or adjacent brain regions, and, if multiple sites are targeted, specially constructed head-caps are used. Here, we present a novel design style, for both microdrives and head-caps, which takes advantage of three-dimensional printing technology. This design facilitates targeting of multiple brain regions in various configurations. Moreover, the parts are easily fabricated in large quantities, with only minor hand-tooling and finishing required.

  15. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    NASA Astrophysics Data System (ADS)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  16. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-10-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  17. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures

    NASA Astrophysics Data System (ADS)

    Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P.; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-01-01

    Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

  18. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

    PubMed

    Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-01-06

    Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

  19. Probing Ferroelectric Domain Engineering in BiFeO3 Thin Films by Second Harmonic Generation.

    PubMed

    Trassin, Morgan; Luca, Gabriele De; Manz, Sebastian; Fiebig, Manfred

    2015-09-02

    An optical probe of the ferroelectric domain distribution and manipulation in BiFeO3 thin films is reported using optical second harmonic generation. A unique relation between the domain distribution and its integral symmetry is established. The ferroelectric signature is even resolved when the film is covered by a top electrode. The effect of voltage-induced ferroelectric switching is imaged.

  20. Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

    DOEpatents

    Goyal, Amit; Shin, Junsoo

    2015-03-31

    A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

  1. The Inorganie Fluoride and Oxyfluoride Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ravez, J.

    1997-06-01

    The ferroelectric fluorides belong to six families of type (NH4)2BeF4, BaMnF4, SrAlF5, Na2MgAlF7, K3Fe5F{15} or Pb5Cr3F{19}. The oxyfluorides can be separated in two groups: i) the true oxyfluorides with a relatively high F/O value (K3MoO3F3, Na5W3O9F5, Pb5W3O9F{10}, Bi2TiO4F2, ...); ii) the compositions derived from ferroelectric oxides (perovskite, tetragonal tungsten bronze, pyrochlore, LiTaO3, ...) characterized by a continuous F-O substitution. The phase transitions and the physical properties are discussed. The origin of the spontaneous polarization is described structurally. The variations of the Curie temperature with the type of substitution are related to chemical bonding. The potential interest of these materials for applications is briefly given. Les ferroélectriques fluorés appartiennent à six familles de type (NH4)_2BeF4, BaMnF4, SrAlF5, Na2MgAlF7, K3Fe5F{15} ou Pb5Cr3F{19}. Les oxyfluorures peuvent être séparés en deux groupes : i) les oxyfluorures “vrais” comportant un rapport F/O relativement élevé (K3MoO3F3, Na5W3O9F5, Pb5W3O9F{10}, Bi2TiO4F2, ...), ii) les compositions dérivées des oxydes ferroélectriques (perovskite, bronze quadratique de tungstène, pyrochlore, LiTaO3, ...) et caractérisées par une substitution F-O continue. Les transitions de phases et les propriétés physiques sont analysées. L'origine de la polarisation est précisée sur le plan structural. Les variations de la température de Curie avec le type de substitution sont reliées à des considérations de liaison chimique. L'intérêt potentiel de ces matériaux pour les applications est brièvement abordé.

  2. Capacitance-voltage measurement in memory devices using ferroelectric polymer

    NASA Astrophysics Data System (ADS)

    Nguyen, Chien A.; Lee, Pooi See

    2006-01-01

    Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

  3. Ferroelectricity in one unit-cell period oxide superlattices

    NASA Astrophysics Data System (ADS)

    Noh, T. W.; Lee, J. H.; Lee, H. N.

    2005-03-01

    We present electric properties of one unit-cell period superlattices composed of CaTiO3 (CTO), SrTiO3 (STO), and BaTiO3 (BTO) perovskites, in which the structural symmetry and lattice misfit strain can be systematically varied without changing the chemical valence states. The one unit-cell period CTO/BTO, BTO/STO, and CTO/STO superlattices were grown by high oxygen pressure pulsed laser deposition on atomically flat SrRuO3 conducting oxide grown on STO (001) substrates. CTO/BTO and BTO/STO showed ferroelectricity in room temperature, while CTO/STO showed paraelectric behavior. Such spontaneous electric polarization was an unexpected result, because all TiO6 octahedron was not in the same structural condition with ferroelectric BTO, but was sandwiched by CaO (SrO) and BaO layers in these superlattices. By performing first principle calculations, ferroelectric ground states can be found in the distorted TiO6. Moreover, the ferroelectricity was described as the collective displacement of the titanium-oxygen-titanium ions, which is different from that of bulk ferroelectric material.

  4. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials

    NASA Astrophysics Data System (ADS)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  5. Complex oxide ferroelectrics: Electrostatic doping by domain walls

    DOE PAGES

    Maksymovych, Petro

    2015-06-19

    Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacementsmore » changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.« less

  6. Ferroelectric surface induced electron doping in a zigzag graphene nanoribbon

    NASA Astrophysics Data System (ADS)

    Belletti, G. D.; Dalosto, S. D.; Tinte, S.

    2016-11-01

    The interface between a zigzag graphene nanoribbon (zGNR) and the ferroelectric PbTiO3 (0 0 1) surface is studied through first-principles calculations. We investigate how the electric polarization normal to the surface tunes the zGNR electronic and magnetic properties. A ferroelectric single-domain configuration with polarization up and down is considered including explicitly a bottom metallic electrode. Our results show how not only the ferroelectric polarization direction determines the doping in zGNR—the downward polarization induces a p-type doping in a planar zGNR whereas the upward polarization keeps it intrinsic—but also the features of the clean ferroelectric surface, such as the atomic relaxation and the electronic distribution. Interestingly, the surface ferroelectric polarization, besides tuning the carrier type as it does in graphene, also closes the zGNR band gap which can be understood in terms of the weakening of the local magnetic moment of the edge carbon atoms as the polarization increases. The zGNR antiferromagnetic ground state is preserved without breaking the α-β degeneracy.

  7. Why is the electrocaloric effect so small in ferroelectrics?

    NASA Astrophysics Data System (ADS)

    Guzmán-Verri, G. G.; Littlewood, P. B.

    2016-06-01

    Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  8. Graphene-ferroelectric hybrid structure for flexible transparent electrodes.

    PubMed

    Ni, Guang-Xin; Zheng, Yi; Bae, Sukang; Tan, Chin Yaw; Kahya, Orhan; Wu, Jing; Hong, Byung Hee; Yao, Kui; Özyilmaz, Barbaros

    2012-05-22

    Graphene has exceptional optical, mechanical, and electrical properties, making it an emerging material for novel optoelectronics, photonics, and flexible transparent electrode applications. However, the relatively high sheet resistance of graphene is a major constraint for many of these applications. Here we propose a new approach to achieve low sheet resistance in large-scale CVD monolayer graphene using nonvolatile ferroelectric polymer gating. In this hybrid structure, large-scale graphene is heavily doped up to 3 × 10(13) cm(-2) by nonvolatile ferroelectric dipoles, yielding a low sheet resistance of 120 Ω/□ at ambient conditions. The graphene-ferroelectric transparent conductors (GFeTCs) exhibit more than 95% transmittance from the visible to the near-infrared range owing to the highly transparent nature of the ferroelectric polymer. Together with its excellent mechanical flexibility, chemical inertness, and the simple fabrication process of ferroelectric polymers, the proposed GFeTCs represent a new route toward large-scale graphene-based transparent electrodes and optoelectronics.

  9. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials

    PubMed Central

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-01-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research. PMID:26424484

  10. Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Chang, Sou-Chi; Naeemi, Azad; Nikonov, Dmitri E.; Gruverman, Alexei

    2017-02-01

    In this paper, a theoretical approach comprising the nonequilibrium Green's function method for electronic transport and the Landau-Khalatnikov equation for electric polarization dynamics is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, the measured current-voltage characteristic curves in both inorganic (Co /BaTi O3/La0.67Sr0.33 MnO3 ) and organic (Au /PVDF /W ) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co /BaTi O3/La0.67Sr0.33 MnO3 systems is addressed by considering the interface termination effects using the effective contact ratio defined through the effective screening length and dielectric response at the metal-ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoOx buffer layer at the Co /BaTi O3 interface in a ferroelectric tunnel memristor. It is shown that in order to have a significant memristor behavior not only the interface oxygen vacancies but also the CoOx layer thickness may vary with the applied bias.

  11. Performing spectroscopic and specific heat studies of improper ferroelectrics

    NASA Technical Reports Server (NTRS)

    Coleman, L. B.

    1982-01-01

    The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.

  12. Clinical trials and E-health: impact of new information technology applied to clinical trials (including source data-medical records) and to human and drug research.

    PubMed

    Béhier, Jehan-Michel; Reynier, Jean-Charles; Bertoye, Pierre-Henri; Vray, Muriel

    2010-01-01

    Within the last few years, new technology has come to play an important part in our professional and private daily environment. Healthcare has not escaped this progressive mutation with computers reaching the bedside. Clinical research has also shown growing interest in these new tools available to the clinical investigator, the patient, as well as to specialist departments for diagnosis and follow-up of patients, and to the different professions in clinical research. If the use of new technology seems to make life easier, by centralizing data or by simplifying data-sharing between different teams, it is still a matter of private data which must remain reliable, confidential and secure, whether it is being used in ordinary healthcare or in academic or industrial research. The aim of the round table was to estimate the impact of new information technology applied to clinical trials (including source data-medical records) and to human and drug research. First, an inventory was made of the development of these new technologies in the healthcare system. The second point developed was identification of expected benefits in order to issue guidelines for their good use and hazard warnings in clinical trials. Finally, the impact of these new technologies on the investigator as well as the project manager was analysed.

  13. Ferroelectric-like hysteresis loop originated from non-ferroelectric effects

    SciTech Connect

    Kim, Bora; Seol, Daehee; Lee, Shinbuhm; Lee, Ho Nyung; Kim, Yunseok

    2016-09-06

    Piezoresponse force microscopy (PFM) has provided advanced nanoscale understanding and analysis of ferroelectric and piezoelectric properties. In PFM-based studies, electromechanical strain induced by the converse piezoelectric effect is probed and analyzed as a PFM response. However, electromechanical strain can also arise from several non-piezoelectric origins that may lead to a misinterpretation of the observed response. Among them, electrostatic interaction can significantly affect the PFM response. Nonetheless, previous studies explored solely the influence of electrostatic interaction on the PFM response under the situation accompanied with polarization switching. Here, we show the influence of the electrostatic interaction in the absence of polarization switching by using unipolar voltage sweep. The obtained results reveal that the electromechanical neutralization between piezoresponse of polarization and electrostatic interaction plays a crucial role in the observed ferroelectric-like hysteresis loop despite the absence of polarization switching. Furthermore, our work can provide a basic guideline for the correct interpretation of the hysteresis loop in PFM-based studies.

  14. Ferroelectric-like hysteresis loop originated from non-ferroelectric effects

    DOE PAGES

    Kim, Bora; Seol, Daehee; Lee, Shinbuhm; ...

    2016-09-06

    Piezoresponse force microscopy (PFM) has provided advanced nanoscale understanding and analysis of ferroelectric and piezoelectric properties. In PFM-based studies, electromechanical strain induced by the converse piezoelectric effect is probed and analyzed as a PFM response. However, electromechanical strain can also arise from several non-piezoelectric origins that may lead to a misinterpretation of the observed response. Among them, electrostatic interaction can significantly affect the PFM response. Nonetheless, previous studies explored solely the influence of electrostatic interaction on the PFM response under the situation accompanied with polarization switching. Here, we show the influence of the electrostatic interaction in the absence of polarizationmore » switching by using unipolar voltage sweep. The obtained results reveal that the electromechanical neutralization between piezoresponse of polarization and electrostatic interaction plays a crucial role in the observed ferroelectric-like hysteresis loop despite the absence of polarization switching. Furthermore, our work can provide a basic guideline for the correct interpretation of the hysteresis loop in PFM-based studies.« less

  15. Critical scaling analysis for displacive-type organic ferroelectrics around ferroelectric transition

    NASA Astrophysics Data System (ADS)

    Ding, L. J.

    2017-04-01

    The critical scaling properties of displacive-type organic ferroelectrics, in which the ferroelectric-paraelectric transition is induced by spin-Peierls instability, are investigated by Green's function theory through the modified Arrott plot, critical isothermal and electrocaloric effect (ECE) analysis around the transition temperature TC. It is shown that the electric entropy change - ΔS follows a power-law dependence of electric field E : - ΔS ∼En with n satisfying the Franco equation n(TC) = 1 +(β - 1) /(β + γ) = 0.618, wherein the obtained critical exponents β = 0.440 and γ = 1.030 are not only corroborated by Kouvel-Fisher method, but also confirm the Widom critical relation δ = 1 + γ / β. The self-consistency and reliability of the obtained critical exponents are further verified by the scaling equations. Additionally, a universal curve of - ΔS is constructed with rescaling temperature and electric field, so that one can extrapolate the ECE in a certain temperature and electric field range, which would be helpful in designing controlled electric refrigeration devices.

  16. Curie transitions for attograms of ferroelectric polymers.

    PubMed

    Serghei, A; Zhao, W; Miranda, D; Russell, T P

    2013-02-13

    Polymer systems having one, two, or three dimensions on the nanometer length scale can exhibit physical properties different from the bulk. The degree of disorder characteristic for large amounts of matter is strongly reduced and changes in symmetry are imposed by means of geometrical confinement. This could be used to induce-through orientation and order-enhancement in the material properties. Experiments on extremely small amounts of matter, however, are naturally characterized by large fluctuations in the measured signals, especially in the case of polymer objects having three dimensions on the nanometer length scale. This imposes the necessity of repeating the measurements until a statistical distribution is obtained. Here we show that investigations on statistical ensembles of attograms of material (1 ag = 10(-18) g) are possible in a single experiment by employing highly ordered arrays of identical, independent, additive nanocontainers. Phase transitions corresponding to attograms of a ferroelectric polymer are measured by this approach. As compared to one- or two-dimensional confinement, significant changes in the Curie transitions are found.

  17. Charge ordering and ferroelectricity in magnetite

    NASA Astrophysics Data System (ADS)

    Khomskii, Daniel

    2007-03-01

    Magnetite Fe3O4 is one of the most fascinating material in solid state physics. Besides being the first magnetic material known to the mankind, it is also the first example of an insulator-metal transition in transition metal oxides -- the famous Verwey transition [1]. One usually connects this transition with the charge ordering of Fe^2+ and Fe^3+. However the detailed pattern of CO in Fe3O4 is still a matter of debate. Another aspect, which is not so widely known and which did not yet receive sufficient attention, is that below TV, besides being completely spin polarised, magnetite apparently is also ferroelectric (FE) [2]. Thus it seems that magnetite, besides being the first magnetic material and the first transition metal oxide with an insulator-metal transition, is also the first multiferroic material. Using the idea of a coexistence of site-centred and bond-centred charge ordering [3], I suggest a novel type of ordering in magnetite which explains the observed FE in Fe3O4 and which agrees with the structural data. [1] Verwey E.J.W., Nature 144, 327 (1939) [2] Rado G.T. and Ferrari J.M., Phys.Rev.B 12, 5166 (1975); Kato K. and Iida S., J.Phys.Soc.Japan 50, 2844 (1981) [3] Efremov D.V., van den Brink J. and Khomskii D.I., Nature Mater. 3, 853 (2004)

  18. Phononic Crystal Tunable via Ferroelectric Phase Transition

    NASA Astrophysics Data System (ADS)

    Xu, Chaowei; Cai, Feiyan; Xie, Shuhong; Li, Fei; Sun, Rong; Fu, Xianzhu; Xiong, Rengen; Zhang, Yi; Zheng, Hairong; Li, Jiangyu

    2015-09-01

    Phononic crystals (PCs) consisting of periodic materials with different acoustic properties have potential applications in functional devices. To realize more smart functions, it is desirable to actively control the properties of PCs on demand, ideally within the same fabricated system. Here, we report a tunable PC made of Ba0.7Sr0.3Ti O3 (BST) ceramics, wherein a 20-K temperature change near room temperature results in a 20% frequency shift in the transmission spectra induced by a ferroelectric phase transition. The tunability phenomenon is attributed to the structure-induced resonant excitation of A0 and A1 Lamb modes that exist intrinsically in the uniform BST plate, while these Lamb modes are sensitive to the elastic properties of the plate and can be modulated by temperature in a BST plate around the Curie temperature. The study finds opportunities for creating tunable PCs and enables smart temperature-tuned devices such as the Lamb wave filter or sensor.

  19. Exchange interaction and conductivity in ferroelectric hexaferrite

    NASA Astrophysics Data System (ADS)

    Novák, Pavel; Knížek, Karel

    2007-09-01

    Ba 0.5Sr 1.5Zn 2Fe 12O 22 is a new promising multiferroic compound in which the existence of electric polarization is conditioned by the noncollinear arrangement of the iron spins. In principle, ferroelectricity might be present above the room temperature, but electrical conductivity prevents its observation at temperatures higher than ≈130 K. Our recent calculations showed that the electronic structure and in particular the conductivity is strongly influenced by relative fractions of iron and zinc in the tetrahedral sublattice of the spinel block in corresponding Y hexaferrite structure. In this paper, we show that the same holds for the exchange interactions. Dependence of the exchange integrals on the distribution of iron and zinc in the tetrahedral sublattice of the spinel block and on the content of Sr in Ba 2-xSr xZn 2Fe 12O 22 system is calculated using the ab initio approach with an improved treatment of strongly correlated 3d electrons of iron ions. The interaction between the two magnetic blocks that is decisive for the phase diagram is analysed in details.

  20. 2015 Edition Health Information Technology (Health IT) Certification Criteria, 2015 Edition Base Electronic Health Record (EHR) Definition, and ONC Health IT Certification Program Modifications. Final rule.

    PubMed

    2015-10-16

    This final rule finalizes a new edition of certification criteria (the 2015 Edition health IT certification criteria or "2015 Edition'') and a new 2015 Edition Base Electronic Health Record (EHR) definition, while also modifying the ONC Health IT Certification Program to make it open and accessible to more types of health IT and health IT that supports various care and practice settings. The 2015 Edition establishes the capabilities and specifies the related standards and implementation specifications that Certified Electronic Health Record Technology (CEHRT) would need to include to, at a minimum, support the achievement of meaningful use by eligible professionals (EPs), eligible hospitals, and critical access hospitals (CAHs) under the Medicare and Medicaid EHR Incentive Programs (EHR Incentive Programs) when such edition is required for use under these programs.

  1. [Local communalization of clinical records between the municipal community hospital and local medical institutes by using information technology].

    PubMed

    Iijima, Shohei; Shinoki, Keiji; Ibata, Takeshi; Nakashita, Chisako; Doi, Seiko; Hidaka, Kumi; Hata, Akiko; Matsuoka, Mio; Waguchi, Hideko; Mito, Saori; Komuro, Ryutaro

    2012-12-01

    We introduced the electronic health record system in 2002. We produced a community medical network system to consolidate all medical treatment information from the local institute in 2010. Here, we report on the present status of this system that has been in use for the previous 2 years. We obtained a private server, set up a virtual private network(VPN)in our hospital, and installed dedicated terminals to issue an electronic certificate in 50 local institutions. The local institute applies for patient agreement in the community hospital(hospital designation style). They are then entitled to access the information of the designated patient via this local network server for one year. They can access each original medical record, sorted on the basis of the medical attendant and the chief physician; a summary of hospital stay; records of medication prescription; and the results of clinical examinations. Currently, there are approximately 80 new registrations and accesses per month. Information is provided in real time allowing up to date information, helping prescribe the medical treatment at the local institute. However, this information sharing system is read-only, and there is no cooperative clinical pass system. Therefore, this system has a limit to meet the demand for cooperation with the local clinics.

  2. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    SciTech Connect

    Jay L. Hirshfield

    2011-03-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  3. Semiconductor ferroelectric compositions and their use in photovoltaic devices

    DOEpatents

    Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E; Grinberg, Ilya; West, Don Vincent

    2016-11-01

    Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

  4. Molecular Designs for Enhancement of Polarity in Ferroelectric Soft Materials

    NASA Astrophysics Data System (ADS)

    Ohtani, Ryo; Nakaya, Manabu; Ohmagari, Hitomi; Nakamura, Masaaki; Ohta, Kazuchika; Lindoy, Leonard F.; Hayami, Shinya

    2015-11-01

    The racemic oxovanadium(IV) salmmen complexes, [VO((rac)-(4-X-salmmen))] (X = C12C10C5 (1), C16 (2), and C18 (3); salmmen = N,N‧-monomethylenebis-salicylideneimine) with “banana shaped” molecular structures were synthesized, and their ferroelectric properties were investigated. These complexes exhibit well-defined hysteresis loops in their viscous phases, moreover, 1 also displays liquid crystal behaviour. We observed a synergetic effect influenced by three structural aspects; the methyl substituents on the ethylene backbone, the banana shaped structure and the square pyramidal metal cores all play an important role in generating the observed ferroelectricity, pointing the way to a useful strategy for the creation of advanced ferroelectric soft materials.

  5. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    NASA Astrophysics Data System (ADS)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-07-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics.

  6. Molecular Designs for Enhancement of Polarity in Ferroelectric Soft Materials

    PubMed Central

    Ohtani, Ryo; Nakaya, Manabu; Ohmagari, Hitomi; Nakamura, Masaaki; Ohta, Kazuchika; Lindoy, Leonard F.; Hayami, Shinya

    2015-01-01

    The racemic oxovanadium(IV) salmmen complexes, [VO((rac)-(4-X-salmmen))] (X = C12C10C5 (1), C16 (2), and C18 (3); salmmen = N,N′-monomethylenebis-salicylideneimine) with “banana shaped” molecular structures were synthesized, and their ferroelectric properties were investigated. These complexes exhibit well-defined hysteresis loops in their viscous phases, moreover, 1 also displays liquid crystal behaviour. We observed a synergetic effect influenced by three structural aspects; the methyl substituents on the ethylene backbone, the banana shaped structure and the square pyramidal metal cores all play an important role in generating the observed ferroelectricity, pointing the way to a useful strategy for the creation of advanced ferroelectric soft materials. PMID:26568045

  7. Coupled Ultrafast Lattice and Polarization Dynamics in Ferroelectric Nanolayers

    SciTech Connect

    Korff Schmising, C. v.; Bargheer, M.; Kiel, M.; Zhavoronkov, N.; Woerner, M.; Elsaesser, T.; Vrejoiu, I.; Hesse, D.; Alexe, M.

    2007-06-22

    We report the first analysis of the polarization and lattice dynamics in a metal/ferroelectric/metal nanolayer system by femtosecond x-ray diffraction. Two Bragg reflections provide information on the coupled dynamics of the two relevant phonon modes for ferroelectricity in perovskites, the tetragonal distortion and the soft mode. Optical excitation of the SrRuO{sub 3} metal layers generates giant stress (>1 GPa) compressing the PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} layers by up to 2%. The resulting change of tetragonality reaches a maximum after 1.3 ps. As a result, the ferroelectric polarization P is reduced by up to 100% with a slight delay that is due to the anharmonic coupling of the two modes.

  8. Collective and molecular relaxation in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Wrobel, S.; Marzec, M.; Godlewska, Malgorzata; Gestblom, B.; Hiller, Steffen; Haase, Wolfgang

    1995-08-01

    Ferroelectric liquid crystals are molecular ferroelectrics showing up in the tilted liquid crystalline systems (SmC*, SmI*, SmF*) composed of chiral molecules. In this work, we present the dielectric, electro-optic, and calorimetric studies of a single component system: 3-octyloxy-6[2-fluor-4-(2-fluoroctyloxy)phenyl]-pyridine showing interesting ferroelectric properties. The compound exhibits a first order N*- SmC* phase transition which leads to a qualitatively new behavior, for instance the relaxation frequency of the soft mode below TC seems to be temperature independent. The high frequency relaxation process, connected with the reorientation around the long axis, is practically undisturbed at the N*-SmC* transition. Yet, it was found that in the SmC* phase, the best fit was obatined with two Cole-Cole functions yielding two relaxation times to describe a biased reorientation of molecules in the SmC* phase.

  9. Electrical domain morphologies in compositionally graded ferroelectric films.

    PubMed

    Okatan, M B; Roytburd, A L; Nagarajan, V; Alpay, S P

    2012-01-18

    We present a nonlinear thermodynamic formalism coupled with an electrostatic analysis of uniaxial n-layered compositionally graded heteroepitaxial ferroelectric films and extend this formalism to continuously graded ferroelectric films. We show that the domain morphology and its subsequent evolution in the presence of an electric field are determined by the spontaneous polarisation of the film induced through the compositional grading. The results for compositionally graded epitaxial (001) (Ba,Sr)TiO(3) and (001) Pb(Zr,Ti)O(3) films on (001)SrTiO(3) demonstrate that, while the domain morphologies in these two films are different in appearance, the dielectric displacement and the dielectric permittivity of such graded ferroelectric films exhibit a strong nonlinear behaviour which results in a high dielectric tunability. These findings indicate that it is possible to design specific domain structures that will yield desirable dielectric properties by controlling the strength of the compositional grading in the films.

  10. Ultrathin flexible memory devices based on organic ferroelectric transistors

    NASA Astrophysics Data System (ADS)

    Sugano, Ryo; Hirai, Yoshinori; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    Here, we demonstrate ultrathin, flexible nonvolatile memory devices with excellent durability under compressive strain. Ferroelectric-gate field-effect transistors (FeFETs) employing organic semiconductor and polymer ferroelectric layers are fabricated on a 1-µm-thick plastic film substrate. The FeFETs are characterized by measuring their transfer characteristics, programming time, and data retention time. The data retention time is almost unchanged even when a 50% compressive strain is applied to the devices. To clarify the origin of the excellent durability of the devices against compressive strain, an intermediate plane is calculated. From the calculation result, the intermediate plane is placed close to the channel region of the FeFETs. The high flexibility of the ferroelectric polymer and ultrathin device structure contributes to achieving a bending radius of 0.8 µm without the degradation of memory characteristics.

  11. Large electrocaloric effect in ferroelectric polymers near room temperature.

    PubMed

    Neese, Bret; Chu, Baojin; Lu, Sheng-Guo; Wang, Yong; Furman, E; Zhang, Q M

    2008-08-08

    Applying an electrical field to a polar polymer may induce a large change in the dipolar ordering, and if the associated entropy changes are large, they can be explored in cooling applications. With the use of the Maxwell relation between the pyroelectric coefficient and the electrocaloric effect (ECE), it was determined that a large ECE can be realized in the ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer at temperatures above the ferroelectric-paraelectric transition (above 70 degrees C), where an isothermal entropy change of more than 55 joules per kilogram per kelvin degree and adiabatic temperature change of more than 12 degrees C were observed. We further showed that a similar level of ECE near room temperature can be achieved by working with the relaxor ferroelectric polymer of P(VDF-TrFE-chlorofluoroethylene).

  12. Development of a Ferroelectric Based Tunable DLA Structure

    SciTech Connect

    Kanareykin, A.; Schoessow, P.; Jing, C.; Nenasheva, E.; Power, J. G.; Gai, W.

    2009-01-22

    An experimental demonstration of a tunable Dielectric Loaded Accelerating (DLA)[1] structure is planned using a nonlinear ferroelectric with temperature- or voltage-controllable permittivity. We designed and tested two prototype Ka-band double layer ferroelectric-ceramic structures (cylindrical and planar) consisting of linear ceramic layers (dielectric constant of 6.8) and BST(M) composite ferroelectric layers of 400-800 {mu}m thickness and dielectric constant of 450-550. The frequency shift by temperature variation of the cylindrical Ka-band tunable DLA of 14 MHz/ deg. K has been demonstrated leading to an overall DLA structure frequency tuning range of 140-280 MHz with 10-20 deg. K temperature variation. The Ka band prototype DLA structure demonstrated a 6 MHz frequency tuning range for a dc bias field design at 25 kV/cm field strength.

  13. Enhanced Born charge and proximity to ferroelectricity in thallium halides

    NASA Astrophysics Data System (ADS)

    Du, Mao-Hua; Singh, David J.

    2010-04-01

    Electronic-structure and lattice-dynamics calculations on thallium halides show that the Born effective charges in these compounds are more than twice larger than the nominal ionic charges. This is a result of cross-band-gap hybridization between Tlp and halogen- p states. The large Born charges cause giant splitting between longitudinal and transverse-optic phonon modes, bringing the lattice close to ferroelectric instability. Our calculations indeed show that cubic TlBr develops ferroelectric instabilities upon lattice expansion starting at 2%. It is remarkable that the apparently ionic thallium halides with a simple cubic CsCl structure and large differences in electronegativity between cations and anions can be very close to ferroelectricity. This can lead to effective screening of defects and impurities that would otherwise be strong carrier traps and may therefore contribute to the relatively good carrier transport properties in TlBr radiation detectors.

  14. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    PubMed Central

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  15. Piezoelectric properties of rhombohedral ferroelectric materials with phase transition

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaofang; Soh, A. K.

    2015-12-01

    The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau-Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.

  16. Thin-film ferroelectric materials and their applications

    NASA Astrophysics Data System (ADS)

    Martin, Lane W.; Rappe, Andrew M.

    2016-11-01

    Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years.

  17. Polarization control at spin-driven ferroelectric domain walls.

    PubMed

    Leo, Naëmi; Bergman, Anders; Cano, Andres; Poudel, Narayan; Lorenz, Bernd; Fiebig, Manfred; Meier, Dennis

    2015-04-14

    Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

  18. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    SciTech Connect

    Kumar, Ashok Shukla, A. K.; Barrionuevo, D.; Ortega, N.; Katiyar, Ram S.; Shannigrahi, Santiranjan; Scott, J. F.

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  19. Integration of Ferroelectrics, Ferromagnets, and Multiferroics with Silicon

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell

    2009-03-01

    In this talk I will describe the epitaxial integration of ferroelectrics, ferromagnets, and materials that are both at the same time, with silicon. Until recently, ``oxide'' could only mean one thing to anyone working in the semiconductor industry---SiO2. But oxides are an exciting class of electronic materials in their own right. Oxides exhibit the full spectrum of electronic, optical, and magnetic behavior including many functionalities not found in conventional semiconductors. Further, such oxides can be combined epitaxially not only with each other, but epitaxially with the workhorse of semiconductor technology, silicon, enabling the unparalleled variety of physical properties of oxides to be exploited in new ways for electronic applications. The specific oxides that my collaborators* and I have integrated epitaxially with silicon include EuO, ZnO, CaTiO3, SrTiO3, BaTiO3, BiFeO3, Pb(Zr,Ti)O3, and PbMg1/3Nb2/3O3-PbTiO3. Highlights from these systems will be presented. * The work reported was performed in collaboration with the groups of Jochen Mannhart (U. Augsburg), Chang-Beom Eom (U. Wisconsin-Madison), Ramamoorthy Ramesh (Berkeley), Jeremy Levy (U. Pittsburgh), David Muller (Cornell), Xiaoqing Pan (U. Michigan), J"urgen Schubert (J"ulich), Long-Qing Chen (Penn State), Susan Trolier-McKinstry (Penn State), Yves Idzerda (Montana State), Peter B"oni (TU M"unchen), Joseph Woicik (NIST), Philip Ryan (Ames), Michael Bedzyk (Northwestern), Yuri Barash (Russian Acad. Sci.), Qing Ma (Intel), and Hao Li (Motorola).

  20. Health Care Information Technology in Rural America: Electronic Medical Record Adoption Status in Meeting the National Agenda

    ERIC Educational Resources Information Center

    Bahensky, James A.; Jaana, Mirou; Ward, Marcia M.

    2008-01-01

    Continuing is a national political drive for investments in health care information technology (HIT) that will allow the transformation of health care for quality improvement and cost reduction. Despite several initiatives by the federal government to spur this development, HIT implementation has been limited, particularly in the rural market. The…

  1. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  2. Manipulation of ferroelectric vortex domains in hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Lilienblum, M.; Soergel, E.; Fiebig, M.

    2011-09-01

    The modification of ferroelectric vortex domain patterns in hexagonal manganites (here exemplified by YMnO3 and HoMnO3) owing to chemical treatment, thermal annealing, and local electric-field poling is investigated by piezoresponse force microscopy. Chemical treatment transfers the domain pattern into a topographical pattern by domain selective etching. Thermal annealing alters the domain pattern without any sign of temperature memory effects. Local electric fields affect the domain structure with possible signs of electric memory effects. These observations are important for future investigations of the microscopic mechanisms and macroscopic parameters defining the formation of ferroelectric domains in this unusual multiferroic.

  3. Voltage tunability of thermal conductivity in ferroelectric materials

    DOEpatents

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  4. Ferroelectric polymer-based nanocomposites: Towards multiferroic materials

    NASA Astrophysics Data System (ADS)

    Andrew, Jennifer S.

    This dissertation describes new routes towards magnetic-ferroelectric materials, leading to new materials for multiferroic applications. Multiferroic materials exhibit both ferromagnetic and ferroelectric properties, which tend to be mutually exclusive in single-phase materials. Therefore, composite materials are the obvious approach to realizing a material with both a high electric permittivity and high magnetic permeability. In composite systems the magnetoelectric effect arises from a mechanical coupling between a magnetostrictive and a piezoelectric phase. In order to enhance this coupling the interfacial area between the two phases should be maximized. This can be accomplished with nanoparticles, which have a large surface to volume ratio. This work begins with the synthesis of ferrimagnetic (MFe2O 4, M=Ni, Ni0.5Zn0.5, Co) and ferroelectric (BaTiO 3) nanoparticles. Aqueous coprecipitation routes produced superparamagnetic ferrite nanoparticles with an average diameter of 8-10 nanometers. Nanometer sized particles of barium titanate were also produced, but they were cubic and therefore do not exhibit ferroelectric behavior. We then developed routes to form nanoparticle-nanoparticle composites by controlling their stability in solution and therefore their final assembly into magnetic-dielectric nanocomposites. We also developed novel magnetic-ferroelectric composites by filling a ferroelectric polymer with magnetic and dielectric nanoparticles. Polyvinylidene difluoride (PVDF) fibers as well as fibers with continuously dispersed ferrite (Ni0.5Zn0.5Fe2O4) nanoparticles were prepared by electrospinning from dimethyl formamide (DMF) solutions. The effects of the electrospinning processing conditions and nanoparticle loading on the fiber morphology, crystallinity, and the crystalline structure of PVDF were examined. Magnetic and dielectric measurements were also performed. Electrospinning provides a simple technique to form PVDF in the ferroelectric beta

  5. Examining graphene field effect sensors for ferroelectric thin film studies.

    PubMed

    Rajapitamahuni, A; Hoffman, J; Ahn, C H; Hong, X

    2013-09-11

    We examine a prototype graphene field effect sensor for the study of the dielectric constant, pyroelectric coefficient, and ferroelectric polarization of 100-300 nm epitaxial (Ba,Sr)TiO3 thin films. Ferroelectric switching induces hysteresis in the resistivity and carrier density of n-layer graphene (n = 1-5) below 100 K, which competes with an antihysteresis behavior activated by the combined effects of electric field and temperature. We also discuss how the polarization asymmetry and interface charge dynamics affect the electronic properties of graphene.

  6. Phase transitions in ferroelectric silicon doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Böscke, T. S.; Teichert, St.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.

    2011-09-01

    We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier.

  7. Clamping effect on the microwave properties of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Poplavko, Y.; Cho, N.-I.

    1999-11-01

    Ferroelectric and paraelectric films deposited on dielectric and semiconductor substrates were studied at the frequency range 0.3-100 GHz and temperature interval 300-700 K in comparison with chemically equivalent bulk materials. A dielectric spectroscopy method helps to trace the change of dielectric polarization and dielectric loss mechanisms when the free-stress volume (bulk) ferroelectric is transformed into a thin planar layer (film) that is stressed by its forced accommodation to a rigid substrate. The change in bulk-film properties could be either favourable or an adverse factor for electronic devices.

  8. Engineering ferroelectric tunnel junctions through potential profile shaping

    SciTech Connect

    Boyn, S.; Garcia, V. Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A.

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  9. Dynamic Properties of Dielectric Susceptibility in Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Cui, Lian; Cui, Haiying; Wu, Chunmei; Yang, Guihua; He, Zelong; Wang, Yuling; Che, Jixin

    2016-02-01

    In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

  10. Ferroelectric control of anisotropic damping in multiferroic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Zhang, Ning; Berakdar, Jamal; Jia, Chenglong

    2015-10-01

    The magnetoelectric effect on nonlocal magnetization dynamics is theoretically investigated in normal-metal/ferroelectric-insulator/ferromagnetic tunnel junctions. In addition to the Rashba spin-orbit interaction (SOI) originating from loss of parity symmetry at the interfaces, the topology of interfacial spiral spins triggered by ferroelectric polarization acts with an effective SOI that is electrically controllable. These spin-dependent interactions result in an anisotropic Gilbert damping with C2 v symmetry. The findings are of a direct relevance for the utilization of composite multiferroics for devices that rely on electrically controlled magnetic switching.

  11. Tunable ferroelectric capacitor-based voltage-controlled oscillator.

    PubMed

    Jamil, Asad; Kalkur, Thottam S; Cramer, Nicholas

    2007-02-01

    Ferroelectric capacitors made from Ba(1-0.5)Sr0.5TiO3 (BST) are applied as varactors in tunable, high-frequency circuit applications. In this context, a voltage-controlled oscillator (VCO) has been designed and implemented using discrete RF bipolar junction transistor (BJTs) and tunable ferroelectric capacitor. The designed VCO has a tuning range from 205 MHz to 216.3 MHz with a power dissipation of 5.1 mW. The measured phase noise is -90 dBc/Hz at 100 kHz and -140 dBc/Hz at 1 MHz offset.

  12. Some strategies for improving caloric responses with ferroelectrics

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Scott, James F.; Dkhil, Brahim

    2016-06-01

    Many important breakthroughs and significant engineering developments have been achieved during the past two decades in the field of caloric materials. In this review, we address ferroelectrics emerging as ideal materials which permit both giant elastocaloric and/or electrocaloric responses near room temperature. We summarize recent strategies for improving caloric responses using geometrical optimization, maximizing the number of coexisting phases, combining positive and negative caloric responses, introducing extra degree of freedom like mechanical stress/pressure, and multicaloric effect driven by either single stimulus or multiple stimuli. This review highlights the promising perspective of ferroelectrics for developing next-generation solid-state refrigeration.

  13. The polarizability model for ferroelectricity in perovskite oxides.

    PubMed

    Bussmann-Holder, Annette

    2012-07-11

    This article reviews the polarizability model and its applications to ferroelectric perovskite oxides. The motivation for the introduction of the model is discussed and nonlinear oxygen ion polarizability effects and their lattice dynamical implementation outlined. While a large part of this work is dedicated to results obtained within the self-consistent-phonon approximation, nonlinear solutions of the model are also handled, which are of interest to the physics of relaxor ferroelectrics, domain wall motions, and incommensurate phase transitions. The main emphasis is to compare the results of the model with experimental data and to predict novel phenomena.

  14. Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

    SciTech Connect

    Garten, Lauren M. Trolier-McKinstry, Susan

    2015-03-07

    Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 °C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d{sub 33} piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9 kV m{sup −1}. It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response.

  15. Ferroelectric Smectic Phase Formed by Achiral Straight Core Mesogens

    NASA Astrophysics Data System (ADS)

    Stannarius, Ralf; Li, Jianjun; Weissflog, Wolfgang

    2003-01-01

    We report electro-optic experiments in liquid crystalline freestanding films of achiral hockey stick shaped mesogens with a straight aromatic core. The material forms two smectic mesophases. In the higher temperature phase, a spontaneous polarization exists in the smectic layer plane and the films show polar switching in electric fields. It is the first example of a ferroelectric phase formed by nearly rodlike achiral mesogens. Mirror symmetry of the phase is spontaneously broken. We propose a molecular configuration similar to a synclinic ferroelectric (CSPF) high temperature phase and an anticlinic, probably antiferroelectric (CAPA) low temperature phase.

  16. Optical model of transient light scattering in ferroelectric liquid crystals

    SciTech Connect

    Loiko, V. A. Konkolovich, A. V.; Miskevich, A. A.

    2009-03-15

    A static optical model is developed for the effect of field-induced transient scattering on coherent light transmission through ferroelectric liquid crystals. Scattering processes are described by introducing an optically anisotropic medium containing scatterers (transient domains). The results presented in the paper are obtained for a plane parallel layer of ferroelectric liquid crystals with a planar helicoidal structure under normal illumination with a linearly polarized plane wave. An analysis is presented of the coherent transmittance of the layer in static applied electric fields.

  17. Ferroelectric tunnel junctions with multi-quantum well structures

    SciTech Connect

    Ma, Zhijun; Zhang, Tianjin; Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  18. Ferroelectric control of magnetism in BaTiO3/Fe heterostructures

    NASA Astrophysics Data System (ADS)

    Sahoo, Sarbeswar; Polisetty, Srinivas; Duan, Chun Gang; Jaswal, Sitaram; Tsymbal, Evgeny; Binek, Christian

    2008-03-01

    Multiferroics can offer the possibility to manipulate the cross coupled order parameters by conjugate electric and magnetic fields. Switching off ferromagnetic order by an electric field for instance promises significant impact in the design of novel spintronic devices. Here we report on the reversible control of magnetism for a Fe thin film in proximity of a BaTiO3 single-crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of BaTiO3 controlled by applied electric fields and temperature, respectively.^ Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of BaTiO3. Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for new technological applications. ^S. Sahoo, S. Polisetty, C.-G. Duan, S. S. Jaswal, E. Y. Tsymbal, and Ch. Binek, Phys. Rev. B 76, 092108 (2007).

  19. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    PubMed

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-08

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

  20. Note: Miniature 120-kV autonomous generator based on transverse shock-wave depolarization of Pb(Zr0.52Ti0.48)O3 ferroelectrics.

    PubMed

    Shkuratov, Sergey I; Baird, Jason; Talantsev, Evgueni F

    2011-08-01

    The design of autonomous ultrahigh-voltage generators with no moving metallic parts based on transverse explosive shock wave depolarization of Pb(Zr(0.52)Ti(0.48))O(3) (PZT 52∕48) poled ferroelectrics was explored and studied. It follows from experimental results that the output voltage produced by the shock-wave ferroelectric generators (FEGs) is directly proportional to the number of PZT 52/48 elements connected in series. It was demonstrated that miniature FEGs (volume less than 180 cm(3)) were capable of reliably producing output voltage pulses with amplitudes exceeding 120 kV which is the record reported in open literature.

  1. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  2. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  3. Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

    SciTech Connect

    Sarkar, Ayan; Khan, Gobinda Gopal; Chaudhuri, Arka; Das, Avishek; Mandal, Kalyan

    2016-01-18

    Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

  4. Ferroelectricity in d0 double perovskite fluoroscandates

    NASA Astrophysics Data System (ADS)

    Charles, Nenian; Rondinelli, James M.

    2015-08-01

    Ferroelectricity in strain-free and strained double perovskite fluorides, Na3ScF6 and K2NaScF6 , is investigated using first-principles density functional theory. Although the experimental room temperature crystal structures of these fluoroscandates are centrosymmetric, i.e., Na3ScF6 (P 21/n ) and K2NaScF6 (F m 3 ¯m ), lattice dynamical calculations reveal that soft polar instabilities exist in each prototypical cubic phase and that the modes harden as the tolerance factor approaches unity. Thus the double fluoroperovskites bear some similarities to A B O3 perovskite oxides; however, in contrast, these fluorides exhibit large acentric displacements of alkali metal cations (Na, K) rather than polar displacements of the transition metal cations. Biaxial strain investigations of the centrosymmetric and polar Na3ScF6 and K2NaScF6 phases reveal that the paraelectric structures are favored under compressive strain, whereas polar structures with in-plane electric polarizations (˜5 -18 μ C cm-2 ) are realized at sufficiently large tensile strains. The electric polarization and stability of the polar structures for both chemistries are found to be further enhanced and stabilized by a coexisting single octahedral tilt system. Our results suggest that polar double perovskite fluorides may be realized by suppression of octahedral rotations about more than one Cartesian axis; structures exhibiting in- or out-of-phase octahedral rotations about the c axis are more susceptible to polar symmetries.

  5. New Techniques in Characterization of Ferroelectric Materials

    NASA Technical Reports Server (NTRS)

    Sehirlioglu, Alp

    2008-01-01

    Two new techniques have been developed to characterize Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) based ferroelectric single crystals: (i) electro-thermal imaging, and (ii) single crystal x-ray diffraction in the transmission mode. (i) Electro-thermal imaging is a remote sensing technique that can detect the polarization direction and poling state of a whole crystal slice. This imaging technique utilizes an IR camera to determine the field induced temperature change and does not require any special or destructive sample preparation. In the resulting images it is possible to distinguish regions of 180 deg domains. This powerful technique can be used remotely during poling to determine the poling state of the crystal to avoid over-poling that can result in inferior properties and/or cracking of the crystals. Electro-thermal imaging produced the first direct observations of polarization rotation. Under bipolar field, the domains near the corners were the first to switch direction. As the field increased above the coercive field, domains at the center part of the crystals switched direction. (ii) X-ray diffraction in the transmission mode has long been used in structure determination of organic crystals and proteins; however, it is not used much to characterize inorganic systems. 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals were examined by this XRD technique for the first time, and a never-before-seen super-lattice was revealed with a doubling of the unit cell in all three directions, giving a cell volume eight times that of a traditional perovskite unit cell. The significance of the super-lattice peaks increased with poling, indicating a structural contribution to ordering. Lack of such observations by electron diffraction in the transmission electron microscope examinations suggests the presence of a bulk effect.

  6. Impact of electronic health record technology on the work and workflow of physicians in the intensive care unit

    PubMed Central

    Carayon, Pascale; Wetterneck, Tosha B.; Alyousef, Bashar; Brown, Roger L.; Cartmill, Randi S.; McGuire, Kerry; Hoonakker, Peter L.T.; Slagle, Jason; Van Roy, Kara S.; Walker, James M.; Weinger, Matthew B.; Xie, Anping; Wood, Kenneth E.

    2015-01-01

    Objective To assess the impact of EHR technology on the work and workflow of ICU physicians and compare time spent by ICU resident and attending physicians on various tasks before and after EHR implementation. Design EHR technology with electronic order management (CPOE, medication administration and pharmacy system) and physician documentation was implemented in October 2007. Measurement We collected a total of 289 h of observation pre- and post-EHR implementation. We directly observed the work of residents in three ICUs (adult medical/surgical ICU, pediatric ICU and neonatal ICU) and attending physicians in one ICU (adult medical/surgical ICU). Results EHR implementation had an impact on the time distribution of tasks as well as the temporal patterns of tasks. After EHR implementation, both residents and attending physicians spent more of their time on clinical review and documentation (40% and 55% increases, respectively). EHR implementation also affected the frequency of switching between tasks, which increased for residents (from 117 to 154 tasks per hour) but decreased for attendings (from 138 to 106 tasks per hour), and the temporal flow of tasks, in particular around what tasks occurred before and after clinical review and documentation. No changes in the time spent in conversational tasks or the physical care of the patient were observed. Conclusions The use of EHR technology has a major impact on ICU physician work (e.g., increased time spent on clinical review and documentation) and workflow (e.g., clinical review and documentation becoming the focal point of many other tasks). Further studies should evaluate the impact of changes in physician work on the quality of care provided. PMID:25910685

  7. A Comprehensive Electronic Health Record Based Patient Navigation Module Including Technology Driven Colorectal Cancer Outreach and Education.

    PubMed

    Ajeesh, Sunny; Luis, Rustveld

    2017-02-10

    The purpose of this concept paper is to propose an innovative multifaceted patient navigation module embedded in the Electronic Health Record (EHR) to address barriers to efficient and effective colorectal cancer (CRC) care. The EHR-based CRC patient navigation module will include several patient navigation features: (1) CRC screening registry; (2) patient navigation data, including CRC screening data, outcomes of patient navigation including navigation status (CRC screening referrals, fecal occult blood test (FOBT) completed, colonoscopy scheduled and completed, cancelations, reschedules, and no-shows); (3) CRC counseling aid; and 4) Web-based CRC education application including interactive features such as a standardized colonoscopy preparation guide, modifiable CRC risk factors, and links to existing resources. An essential component of health informatics is the use of EHR systems to not only provide a system for storing and retrieval of patient health data but can also be used to enhance patient decision-making both from a provider and patient perspective.

  8. Transition probabilities of PrII-lines emitted from a ferroelectric plasma source

    NASA Astrophysics Data System (ADS)

    Goly, A.; Kusz, J.; Quang, B. Nguyen; Weniger, S.

    1991-03-01

    An argon-praseodymium plasma was generated under atmospheric pressure between a ceramic ferroelectric plate and a praseodymium plate. The system of plates was connected to an acoustic frequency supply. The plasma radiation was analyzed in the spectral range from 2000 to 7000 A by using a grating spectrograph with a linear dispersion near 1 mm/A, adopted to photoelectric measurements. The emission spectrum of praseodymium was recorded, and the intensities of a few hundred lines were measured. Transition probabilities were determined for 62 PrII-lines, using available lifetime data for excited levels and measured branching ratios of the corresponding lines. Reasonable agreement has been found between the experimental data of Lage and Whaling (1976) and some of the present results.

  9. Giant Spin-Driven Ferroelectric Polarization in BiFeO3 at Room Temperature

    DOE PAGES

    Lee, Jun Hee; Fishman, Randy S.

    2015-11-11

    Although BiFeO3 is the most extensively investigated multiferroic material, its magnetoelectic couplings are barely understood. Here we report a thorough study of the magentoelectric (ME) couplings in spin-cycloidal buk BiFeO3 using first-principles calculations and microscopic spin-wave models compared with neutron-scattering measurements. We find that huge exchange-striction (ES) polarizations, i.e. the electric response of the magnetic exchange through ferroelectric and antiferrodistortive distortions, is giant enough to dominate over all other ME couplings. We show that BiFeO3 has a hidden record-high spin-driven polarization ( 3 C/cm2) at room-temperature. The huge ES polarizations can be tuned by coupling to the antiferrodistortive rotations.

  10. The Effects of Architecture and Process on the Hardness of Programmable Technologies

    NASA Technical Reports Server (NTRS)

    Katz, Richard; Wang, J. J.; Reed, R.; Kleyner, I.; DOrdine, M.; McCollum, J,; Cronquist, B.; Howard, J.

    1999-01-01

    Architecture and process, combined, significantly affect the hardness of programmable technologies. The effects of high energy ions, ferroelectric memory architectures, and shallow trench isolation are investigated. A detailed single event latchup (SEL) study has been performed.

  11. Frequency-agile microwave components using ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Colom-Ustariz, Jose G.; Rodriguez-Solis, Rafael; Velez, Salmir; Rodriguez-Acosta, Snaider

    2003-04-01

    The non-linear electric field dependence of ferroelectric thin films can be used to design frequency and phase agile components. Tunable components have traditionally been developed using mechanically tuned resonant structures, ferrite components, or semiconductor-based voltage controlled electronics, but they are limited by their frequency performance, high cost, hgih losses, and integration into larger systems. In contrast, the ferroelectric-based tunable microwave component can easily be integrated into conventional microstrip circuits and attributes such as small size, light weight, and low-loss make these components attractive for broadband and multi-frequency applications. Components that are essential elements in the design of a microwave sensor can be fabricated with ferroelectric materials to achieve tunability over a broad frequency range. It has been reported that with a thin ferroelectric film placed between the top conductor layer and the dielectric material of a microstrip structure, and the proper DC bias scheme, tunable components above the Ku band can be fabricated. Components such as phase shifters, coupled line filters, and Lange couplers have been reported in the literature using this technique. In this wokr, simulated results from a full wave electromagnetic simulator are obtained to show the tunability of a matching netowrk typically used in the design of microwave amplifiers and antennas. In addition, simulated results of a multilayer Lange coupler, and a patch antenna are also presented. The results show that typical microstrip structures can be easily modified to provide frequency agile capabilities.

  12. Properties of Ferroelectric Nanostructures: A Combined Theoretical and Experimental Approach

    SciTech Connect

    Bellaiche, Laurent; Fu, Huaxiang

    2008-01-24

    Our main goal was to develop and/or use numerical schemes, from first-principles, to understand (at a microscopic level and via a comparison with experimental data, when available) ferroelectric nanostructures, as well as to reveal their unusual properties.

  13. Mechanisms for the operation of thin film transistors on ferroelectrics

    SciTech Connect

    Seager, C.H.; McIntyre, D.; Tuttle, B.A.; Evans, J.

    1993-12-31

    The electric field emanating from the surface of a poled ferroelectric can control the conduction properties of an overlaying semiconducting film, this combination of materials can thus serve as a non-destructive readout, non-volatile memory device. Here the authors will describe a variety of experimental studies of these devices designed to probe the physics of their operation. The experimental systems included sputtered, n-type semiconductor (SC) films of In{sub 2}O{sub 3} and ZnO deposited on bulk PLZT ferroelectrics (FE) and thin PZT FE films. Two distinctly different types of device response were measured in this study; in the first, the change in SC film conductance observed in the remanent FE state is in the direction expected from the remanent polarization vector in the ferroelectric. In the second, typically seen in the thin film FE devices, the opposite behavior is observed. They find that these two general cases of behavior, including the observed variations of the SC film conductances and carrier mobilities, can be described by a general model which takes into account not only the FE displacement vector, but also charge injected from the semiconductor into the ferroelectric during biasing of the gate.

  14. Magnetic domain wall induced ferroelectricity in double perovskites

    SciTech Connect

    Zhou, Hai Yang; Zhao, Hong Jian E-mail: xmchen59@zju.edu.cn; Chen, Xiang Ming E-mail: xmchen59@zju.edu.cn; Zhang, Wen Qing

    2015-04-13

    Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu{sub 2}CoMnO{sub 6} has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R{sup 3+}, Ni{sup 2+}, Mn{sup 4+}, and O{sup 2−} ions in double perovskites R{sub 2}NiMnO{sub 6} (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P2{sub 1} symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.

  15. Quantitative nonlinear dielectric microscopy of periodically polarized ferroelectric domains

    NASA Astrophysics Data System (ADS)

    Gao, Chen; Duewer, Fred; Lu, Yalin; Xiang, X.-D.

    1998-08-01

    A nonlinear dielectric scanning tip microwave near-field microscope capable of submicron quantitative imaging of nonlinear dielectric constant was developed. This nondestructive technique was used to image the nonlinear dielectric constant profiles of an yttrium-doped LiNbO3 single crystal with periodically polarized ferroelectric domains.

  16. Formation of charged ferroelectric domain walls with controlled periodicity

    PubMed Central

    Bednyakov, Petr S.; Sluka, Tomas; Tagantsev, Alexander K.; Damjanovic, Dragan; Setter, Nava

    2015-01-01

    Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic circuitry. In addition, theory predicts that charged domain walls may influence the electromechanical response of ferroelectrics, with strong enhancement upon increased charged domain wall density. The existence of charged domain walls in proper ferroelectrics is disfavoured by their high formation energy and methods of their preparation in predefined patterns are unknown. Here we develop the theoretical background for the formation of charged domain walls in proper ferroelectrics using energy considerations and outline favourable conditions for their engineering. We experimentally demonstrate, in BaTiO3 single crystals the controlled build-up of high density charged domain wall patterns, down to a spacing of 7 μm with a predominant mixed electronic and ionic screening scenario, hinting to a possible exploitation of charged domain walls in agile electronics and sensing devices. PMID:26516026

  17. Stabilizing the ferroelectric phase in doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.

    2015-08-01

    The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO2 compared to TiN electrodes, yielding a Pr of up to 35 μC/cm2. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO2 films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO2.

  18. Magnetic domain wall induced ferroelectricity in double perovskites

    NASA Astrophysics Data System (ADS)

    Zhou, Hai Yang; Zhao, Hong Jian; Zhang, Wen Qing; Chen, Xiang Ming

    2015-04-01

    Recently, a magnetically induced ferroelectricity occurring at magnetic domain wall of double perovskite Lu2CoMnO6 has been reported experimentally. However, there exists a conflict whether the electric polarization is along b or c direction. Here, by first-principles calculations, we show that the magnetic domain wall (with ↑↑↓↓ spin configuration) can lead to the ferroelectric displacements of R3+, Ni2+, Mn4+, and O2- ions in double perovskites R2NiMnO6 (R = rare earth ion) via exchange striction. The resulted electric polarization is along b direction with the P21 symmetry. We further reveal the origin of the ferroelectric displacements as that: (1) on a structural point of view, such displacements make the two out-of-plane Ni-O-Mn bond angles as well as Ni-Mn distance unequal, and (2) on an energy point of view, such displacements weaken the out-of-plane Ni-Mn super-exchange interaction obviously. Finally, our calculations show that such a kind of ferroelectric order is general in ferromagnetic double perovskites.

  19. A Response Surface Methodology Study of Ferroelectric Memory Devices

    DTIC Science & Technology

    1992-03-01

    Their Applications, Boston, Houghton Mifflin Co., 1975. 34. Giancoli , Douglas C., Physics for Scientists and Engineers: with Modern Physics . Englewood...Ferroelectric Physical Mechanisms ......... . 11 2.1 Molecular Structure ... ............. . i.11 2.2 Curie Temperature .... ............. . 12 2.3 Dielectrics...Basic research has continued, in parallel with improved manufacturing techniques, to determine the physical mechanisms that control the stability of

  20. Residual ferroelectricity in barium strontium titanate thin film tunable dielectrics

    SciTech Connect

    Garten, L. M. Trolier-McKinstry, S.; Lam, P.; Harris, D.; Maria, J.-P.

    2014-07-28

    Loss reduction is critical to develop Ba{sub 1−x}Sr{sub x}TiO{sub 3} thin film tunable microwave dielectric components and dielectric energy storage devices. The presence of ferroelectricity, and hence the domain wall contributions to dielectric loss, will degrade the tunable performance in the microwave region. In this work, residual ferroelectricity—a persistent ferroelectric response above the global phase transition temperature—was characterized in tunable dielectrics using Rayleigh analysis. Chemical solution deposited Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films, with relative tunabilities of 86% over 250 kV/cm at 100 kHz, demonstrated residual ferroelectricity 65 °C above the ostensible paraelectric transition temperature. Frequency dispersion observed in the dielectric temperature response was consistent with the presence of nanopolar regions as one source of residual ferroelectricity. The application of AC electric field for the Rayleigh analysis of these samples led to a doubling of the dielectric loss for fields over 10 kV/cm at room temperature.

  1. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics

    PubMed Central

    Bintachitt, P.; Jesse, S.; Damjanovic, D.; Han, Y.; Reaney, I. M.; Trolier-McKinstry, S.; Kalinin, S. V.

    2010-01-01

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm3 volumes, approximately 106 times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms. PMID:20368462

  2. Rational Design of Molecular Ferroelectric Materials and Nanostructures

    SciTech Connect

    Ducharme, Stephen

    2012-09-25

    The purpose of this project was to gain insight into the properties of molecular ferroelectrics through the detailed study of oligomer analogs of polyvinylidene fluoride (PVDF). By focusing on interactions at both the molecular level and the nanoscale level, we expect to gain improved understanding about the fundamental mechanism of ferroelectricity and its key properties. The research consisted of three complementary components: 1) Rational synthesis of VDF oligomers by Prof. Takacs' group; 2) Detailed structural and electrical studies of thin by Prof. Ducharme's Group; and 3) First-principles computational studies by DOE Lab Partner Dr. Serge Nakhman-son at Argonne National Laboratory. The main results of the work was a detailed understanding of the relationships between the molecular interactions and macroscopic phenomenology of fer-roelectricity VDF oligomers. This is valuable information supporting the development of im-proved electromechanical materials for, e.g., sonar, ultrasonic imaging, artificial muscles, and compliant actuators. Other potential applications include nonvolatile ferroelectric memories, heat-sensing imaging arrays, photovoltaic devices, and functional biomimetic materials. The pro-ject contributed to the training and professional development of undergraduate students and graduate students, post-doctoral assistants, and a high-school teacher. Project personnel took part in several outreach and education activities each year.

  3. Persistence of strong and switchable ferroelectricity despite vacancies

    NASA Astrophysics Data System (ADS)

    Raeliarijaona, Aldo; Fu, Huaxiang

    2017-01-01

    Vacancies play a pivotal role in affecting ferroelectric polarization and switching properties, and there is a possibility that ferroelectricity may be utterly eliminated when defects render the system metallic. However, sufficient quantitative understandings of the subject have been lacking for decades due to the fact that vacancies in ferroelectrics are often charged and polarization in charged systems is not translationally invariant. Here we perform first-principles studies to investigate the influence of vacancies on ferroelectric polarization and polarization switching in prototypical BaTiO3 of tetragonal symmetry. We demonstrate using the modern theory of polarization that, in contrast to common wisdom, defective BaTiO3 with a large concentration of vacancies (or , or ) possesses a strong nonzero electric polarization. Breaking of Ti-O bonds is found to have little effect on the magnitude of polarization, which is striking. Furthermore, a previously unrecognized microscopic mechanism, which is particularly important when vacancies are present, is proposed for polarization switching. The mechanism immediately reveals that (i) the switching barrier in the presence of is small with ΔE = 8.3 meV per bulk formula cell, and the polarization is thus switchable even when vacancies exist; (ii) The local environment of vacancy is surprisingly insignificant in polarization switching. These results provide profound new knowledge and will stimulate more theoretical and experimental interest on defect physics in FEs.

  4. Thermal-to-electric energy conversion using ferroelectric film capacitors

    SciTech Connect

    Kozyrev, A. B.; Platonov, R. A.; Soldatenkov, O. I.

    2014-10-28

    The capacitive ferroelectric thermoelectric converter harvesting electrical energy through non-linear capacitance variation caused by changes in temperature is analyzed. The ferroelectric material used was the thin (0.5 μm) Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} film. On the basis of experimental dependencies of the ferroelectric film permittivity on temperature ranging from 100 K to 350 K under different electric fields up to 80 V/μm, the optimum values of operating temperatures and electric field for the energy harvesting optimization were determined. For the temperature oscillations of ±15 K around room temperature and electric field about 40 V/μm, the harvested energy was estimated as 30 mJ/cm{sup 3}. It is shown that the use of thin ferroelectric films for rapid capacitance variation versus temperature and microelectromechanical systems for fast temperature modulations may be a relevant solution for creation of small power scale generators for portable electronics.

  5. Persistence of strong and switchable ferroelectricity despite vacancies

    PubMed Central

    Raeliarijaona, Aldo; Fu, Huaxiang

    2017-01-01

    Vacancies play a pivotal role in affecting ferroelectric polarization and switching properties, and there is a possibility that ferroelectricity may be utterly eliminated when defects render the system metallic. However, sufficient quantitative understandings of the subject have been lacking for decades due to the fact that vacancies in ferroelectrics are often charged and polarization in charged systems is not translationally invariant. Here we perform first-principles studies to investigate the influence of vacancies on ferroelectric polarization and polarization switching in prototypical BaTiO3 of tetragonal symmetry. We demonstrate using the modern theory of polarization that, in contrast to common wisdom, defective BaTiO3 with a large concentration of vacancies (or , or ) possesses a strong nonzero electric polarization. Breaking of Ti-O bonds is found to have little effect on the magnitude of polarization, which is striking. Furthermore, a previously unrecognized microscopic mechanism, which is particularly important when vacancies are present, is proposed for polarization switching. The mechanism immediately reveals that (i) the switching barrier in the presence of is small with ΔE = 8.3 meV per bulk formula cell, and the polarization is thus switchable even when vacancies exist; (ii) The local environment of vacancy is surprisingly insignificant in polarization switching. These results provide profound new knowledge and will stimulate more theoretical and experimental interest on defect physics in FEs. PMID:28120941

  6. Pressure as a probe of the physics of relaxor ferroelectrics

    SciTech Connect

    SAMARA,GEORGE A.

    2000-01-25

    Pressure studies have provided new insights into the physics of compositionally-disordered ABO{sub 3} oxide relaxors. Specifically, results will be presented and discussed on a pressure-induced ferroelectric-to-relaxer crossover phenomenon, the continuous evolution of the energetic and dynamics of the relaxation process, and the interplay between pressure and electric field in determining the dielectric response.

  7. Quantum ferroelectricity in charge-transfer complex crystals

    PubMed Central

    Horiuchi, Sachio; Kobayashi, Kensuke; Kumai, Reiji; Minami, Nao; Kagawa, Fumitaka; Tokura, Yoshinori

    2015-01-01

    Quantum phase transition achieved by fine tuning the continuous phase transition down to zero kelvin is a challenge for solid state science. Critical phenomena distinct from the effects of thermal fluctuations can materialize when the electronic, structural or magnetic long-range order is perturbed by quantum fluctuations between degenerate ground states. Here we have developed chemically pure tetrahalo-p-benzoquinones of n iodine and 4–n bromine substituents (QBr4–nIn, n=0–4) to search for ferroelectric charge-transfer complexes with tetrathiafulvalene (TTF). Among them, TTF–QBr2I2 exhibits a ferroelectric neutral–ionic phase transition, which is continuously controlled over a wide temperature range from near-zero kelvin to room temperature under hydrostatic pressure. Quantum critical behaviour is accompanied by a much larger permittivity than those of other neutral–ionic transition compounds, such as well-known ferroelectric complex of TTF–QCl4 and quantum antiferroelectric of dimethyl–TTF–QBr4. By contrast, TTF–QBr3I complex, another member of this compound family, shows complete suppression of the ferroelectric spin-Peierls-type phase transition. PMID:26076656

  8. Ferroelectric polymer nanocomposites for room-temperature electrocaloric refrigeration.

    PubMed

    Zhang, Guangzu; Li, Qi; Gu, Haiming; Jiang, Shenglin; Han, Kuo; Gadinski, Matthew R; Haque, Md Amanul; Zhang, Qiming; Wang, Qing

    2015-02-25

    Solution-processable ferroelectric polymer nanocomposites are developed as a new form of electrocaloric materials that can be effectively operated under both modest and high electric fields at ambient temperature. By integrating the complementary properties of the constituents, the nanocomposites exhibit state-of-the-art cooling energy densities. Greatly improved thermal conductivity also yields superior cooling power densities validated by finite volume simulations.

  9. Surface effect on domain wall width in ferroelectrics

    SciTech Connect

    Eliseev, Eugene A.; Morozovska, Anna N.; Kalinin, Sergei V.; Li, Yulan; Shen, Jie; Glinchuk, Maya D.; Chen , L.Q.; Gopalan, Venkatraman

    2009-10-15

    We study the effect of the depolarization field on a domain wall structure near the surface of a ferroelectric. Since in real situation bound and screening charges form an electric double layer, the breaking of this layer by the domain wall induces stray depolarization field, which in turn changes the domain wall structure. Power law decay of the stray field results in the power law of polarization saturation near the surface, as compared to exponential saturation in the bulk. Obtained results predict that the surface broadening of ferroelectric domain walls appeared near Curie temperature as well as describe domain wall depth profile in weak ferroelectrics. We qualitatively describe extra-broad domain walls near LiNbO3 and LiTaO3 surfaces observed experimentally at room temperature, which probably originate at high temperatures but did not fully relax their width with temperature decrease allowing for lattice pinning and defect centers. Thus results have broad implication for fundamental issues such as maximal information storage density in ferroelectric data storage, domain wall pinning mechanisms at surfaces and interfaces, and nucleation dynamics.

  10. Domain walls and ferroelectric reversal in corundum derivatives

    NASA Astrophysics Data System (ADS)

    Ye, Meng; Vanderbilt, David

    2017-01-01

    Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.

  11. Improper Ferroelectricity in Stuffed Aluminate Sodalites for Pyroelectric Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Maeda, Yusaku; Wakamatsu, Toru; Konishi, Ayako; Moriwake, Hiroki; Moriyoshi, Chikako; Kuroiwa, Yoshihiro; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

    2017-03-01

    In the present study, we demonstrate ferroelectricity in stuffed aluminate sodalites (Ca1 -xSrx)8[AlO2]12(WO4)2 (x ≤0.2 ) (C1 -xSxAW ). Pyroelectric measurements clarify switchable spontaneous polarization in polycrystalline C1 -xSxAW , whose polarization values are on the order of 10-2 μ C /cm2 at room temperature. A weak anomaly in the dielectric permittivity at temperatures near the ferroelectric transition temperature suggests improper ferroelectricity of C1 -xSxAW for all investigated values of x . A comprehensive study involving synchrotron x-ray powder diffraction measurements, molecular dynamics simulations, and first-principles calculations clarifies that the ferroelectric phase transition of C1 -xSxAW is driven by the freezing of the fluctuations of WO4 tetrahedra in the voids of an [AlO2]12 12 - framework. The voltage response and electromechanical coupling factor of C1 -xSxAW estimated from the present results indicate that this material exhibits excellent performance as a pyroelectric energy harvester, suggesting that aluminate sodalites exhibit great promise as a class of materials for highly efficient energy-harvesting devices.

  12. Mechanism for strong magnetoelectric coupling in dilute magnetic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Weston, L.; Cui, X. Y.; Ringer, S. P.; Stampfl, C.

    2016-11-01

    The manipulation of atomic-scale magnetization is important from both a fundamental and a practical perspective. Using first-principles density-functional-theory calculations within the hybrid functional approach, we systematically study spin-lattice coupling effects for isolated 3 d4-3 d7 transition-metal dopants in a nonmagnetic, ferroelectric PbTiO3 host material. When present at the B-site, a low-spin (or intermediate-spin) to high-spin crossover induces marked ferroelectric-like distortions in the local geometry, characterized by a shift of the dopant ion with respect to the surrounding O6 octahedral cage. The origins of this microscopic multiferroic effect are discussed in terms of the pseudo-Jahn-Teller theory for ferroelectricity. The possibility to exploit this phenomenon to achieve strong magnetoelectric coupling, including controlled spin switching, is also investigated. These results provide a further understanding of ferroelectricity and multiferroicity in perovskite oxides, and they suggest a possible pathway to manipulate single atomic spins in semiconductor solid solutions.

  13. Stabilizing the ferroelectric phase in doped hafnium oxide

    SciTech Connect

    Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.

    2015-08-21

    The ferroelectric properties and crystal structure of doped HfO{sub 2} thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO{sub 2} showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO{sub 2} was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO{sub 2} to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO{sub 2} compared to TiN electrodes, yielding a P{sub r} of up to 35 μC/cm{sup 2}. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO{sub 2} films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO{sub 2}.

  14. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics.

    PubMed

    Bintachitt, P; Jesse, S; Damjanovic, D; Han, Y; Reaney, I M; Trolier-McKinstry, S; Kalinin, S V

    2010-04-20

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025-1 microm(3) volumes, approximately 10(6) times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms.

  15. Generalized Ferroelectricity in the Mesomorphic Phase of Nylon Polymers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongbo; Zhu, Lei; Litt, Morton

    Novel ferroelectric polymers, featured by narrow electric displacement-electric (D-E) hysteresis loop, are attractive for electric energy storage applications due to their high dielectric constant and low loss property. Currently, only poly(vinylidene fluoride) (PVDF)-based copolymers (e-beamed) and terpolymers show novel ferroelectric behavior. It is desired to achieve novel ferroelectricity in other polymers such as nylons by carefully modifying the chemical and crystal structures. In this presentation, isomorphic crystals are successfully achieved by copolymerization of nylon 11 and nylon 12 with different compositions. In this way, both chemical and structural defects (i.e., dangling amide groups and kinked bonds) are introduced into the mesomorphic phase. As a consequence, hydrogen bonding interaction is successfully weakened and thus enhanced ferroelectricity with higher maximum polarization and better polarizability is obtained. In addition, for the purpose of further disturbing the mesomorphic phase and pinning effect, partially methylated nylon copolymers are synthesized. With the help of N-methylation of amide groups, the methylated nylon copolymers show relatively narrow hysteresis loops, suggesting the pinning effect from the N-methylated amide moieties.

  16. Single crystal ternary oxide ferroelectric integration with Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  17. Energy Harvesting Utilizing Stress Induced Phase Transformation in Ferroelectric Piezocrystals

    DTIC Science & Technology

    2013-03-14

    of a phase change transducer configured as a Tonpilz transducer employing mechanical pre- stress, adjustable electronic pre-stress and a single...of another transducer 70 utilizing a Tonpilz configuration with a magnetostrictive pre-stress component 72. Magnetostrictive pre- stress component...entitled “Crystalline Relaxor-Ferroelectric Phase Transition Transducer .” STATEMENT OF GOVERNMENT INTEREST [0002] The invention described herein

  18. The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures

    NASA Astrophysics Data System (ADS)

    Fina, I.; Dix, N.; Rebled, J. M.; Gemeiner, P.; Martí, X.; Peiró, F.; Dkhil, B.; Sánchez, F.; Fàbrega, L.; Fontcuberta, J.

    2013-08-01

    Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transitions of BTO, is strongly modified (up to 36%) when measurements are performed under a magnetic field. Due to the insulating nature of the ferromagnetic layer and the concomitant absence of the electric-field effect, the observed DME effect solely results from the magnetostrictive response of CFO elastically coupled to the BTO layer. These findings show that appropriate architecture and materials selection allow overcoming substrate-induced clamping in multiferroic multi-layered films.Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a

  19. Application of KinectTM and wireless technology for patient data recording and viewing system in the course of surgery

    NASA Astrophysics Data System (ADS)

    Ong, Aira Patrice R.; Bugtai, Nilo T.; Aldaba, Luis Miguel M.; Madrangca, Astrid Valeska H.; Que, Giselle V.; Que, Miles Frederick L.; Tan, Kean Anderson. S.

    2017-02-01

    In modern operating room (OR) conditions, a patient's computed tomography (CT) or magnetic resonance imaging (MRI) scans are some of the most important resources during surgical procedures. In practice, the surgeon is impelled to scrub out and back in every time he needs to scroll through scan images in mid-operation. To prevent leaving the operating table, many surgeons rely on assistants or nurses and give instructions to manipulate the computer for them, which can be cumbersome and frustrating. As a motivation for this study, the use of touchless (non-contact) gesture-based interface in medical practice is incorporated to have aseptic interactions with the computer systems and with the patient's data. The system presented in this paper is composed of three main parts: the Trek Ai-Ball Camera, the Microsoft Kinect™, and the computer software. The incorporation of these components and the developed software allows the user to perform 13 hand gestures, which have been tested to be 100 percent accurate. Based on the results of the tests performed on the system performance, the conclusions made regarding the time efficiency of the viewing system, the quality and the safety of the recording system has gained positive feedback from consulting doctors.

  20. Complex oxide ferroelectrics: Electrostatic doping by domain walls

    SciTech Connect

    Maksymovych, Petro

    2015-06-19

    Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.