Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Base drive circuit

DOEpatents

Lange, Arnold C.

1995-01-01

An improved base drive circuit (10) having a level shifter (24) for providing bistable input signals to a pair of non-linear delays (30, 32). The non-linear delays (30, 32) provide gate control to a corresponding pair of field effect transistors (100, 106) through a corresponding pair of buffer components (88, 94). The non-linear delays (30, 32) provide delayed turn-on for each of the field effect transistors (100, 106) while an associated pair of transistors (72, 80) shunt the non-linear delays (30, 32) during turn-off of the associated field effect transistor (100, 106).

High-frequency noise characterization of graphene field effect transistors on SiC substrates

NASA Astrophysics Data System (ADS)

Yu, C.; He, Z. Z.; Song, X. B.; Liu, Q. B.; Dun, S. B.; Han, T. T.; Wang, J. J.; Zhou, C. J.; Guo, J. C.; Lv, Y. J.; Cai, S. J.; Feng, Z. H.

2017-07-01

Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics.

High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

NASA Astrophysics Data System (ADS)

Minato, Hiroya; Fujiwara, Kohei; Tsukazaki, Atsushi

2018-05-01

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

PubMed

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

PubMed

Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

2010-10-01

A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

Field effect transistors improve buffer amplifier

NASA Technical Reports Server (NTRS)

1967-01-01

Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE PAGES

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; ...

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

NASA Astrophysics Data System (ADS)

Kanaki, Toshiki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2016-10-01

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet/nonferromagnet/ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Analysis of long-channel nanotube field-effect-transistors (NT FETs)

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

2001-01-01

This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dib, E., E-mail: elias.dib@for.unipi.it; Carrillo-Nuñez, H.; Cavassilas, N.

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

PubMed

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

Recent progress in photoactive organic field-effect transistors.

PubMed

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Organic field effect transistor with ultra high amplification

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio

2016-09-01

High-gain transistors are essential for the large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show organic transistors fabricated on plastic foils enabling unipolar amplifiers with ultra-gain. The proposed approach is general and opens up new opportunities for ultra-large signal amplification in organic circuits and sensors.

Charge transport and trapping in organic field effect transistors exposed to polar analytes

NASA Astrophysics Data System (ADS)

Duarte, Davianne; Sharma, Deepak; Cobb, Brian; Dodabalapur, Ananth

2011-03-01

Pentacene based organic thin-film transistors were used to study the effects of polar analytes on charge transport and trapping behavior during vapor sensing. Three sets of devices with differing morphology and mobility (0.001-0.5 cm2/V s) were employed. All devices show enhanced trapping upon exposure to analyte molecules. The organic field effect transistors with different mobilities also provide evidence for morphology dependent partition coefficients. This study helps provide a physical basis for many reports on organic transistor based sensor response.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumitru, L. M.; Manoli, K.; Magliulo, M.

2015-01-01

A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

DOEpatents

Lodi, Robert J.

1976-01-01

A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

Field-effect transistor improves electrometer amplifier

NASA Technical Reports Server (NTRS)

Munoz, R.

1964-01-01

An electrometer amplifier uses a field effect transistor to measure currents of low amperage. The circuit, developed as an ac amplifier, is used with an external filter which limits bandwidth to achieve optimum noise performance.

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

PubMed Central

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-01-01

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development. PMID:28350370

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.

PubMed

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-03-28

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development.

Complementary spin transistor using a quantum well channel.

PubMed

Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

2017-04-20

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

A Field-Effect Transistor (FET) model for ASAP

NASA Technical Reports Server (NTRS)

Ming, L.

1965-01-01

The derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.

Aluminum nitride insulating films for MOSFET devices

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Maserjian, J.

1972-01-01

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-09-01

Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor behaviour in devices fabricated from chemically reduced graphene oxide. The work provided an important step forward for graphene electronics, which has been hampered by difficulties in scaling up the mechanical exfoliation techniques required to produce the high-quality graphene often needed for functioning devices [8]. In Sweden, researchers have developed a transistor design that they fabricate using standard III-V parallel processing, which also has great promise for scaling up production. Their transistor is based on a vertical array of InAs nanowires, which provide high electron mobility and the possibility of high-speed and low-power operation [9]. Different fabrication techniques and design parameters can influence the properties of transistors. Researchers in Belgium used a new method based on high-vacuum scanning spreading resistance microscopy to study the effect of diameter on carrier profile in nanowire transistors [10]. They then used experimental data and simulations to gain a better understanding of how this influenced the transistor performance. In Japan, Y Ohno and colleagues at Nagoya University have reported how atomic layer deposition of an insulating layer of HfO2 on carbon nanotube field effect transistors can change the carrier from p-type to n-type [11]. Carrier type switching—'ambipolar behaviour'—and hysteresis of carbon nanotube network transistors can make achieving reliable device performance challenging. However studies have also suggested that the hysteretic properties may be exploited in non-volatile memory applications. A collaboration of researchers in Italy and the US demonstrated transistor and memory cell behaviour in a system based on a carbon nanotube network [13]. Their device had relatively fast programming, good endurance and the charge retention was successfully enhanced by limiting exposure to air. Progress in understanding transistor behaviour has inspired other innovations in device applications. Nanowires are notoriously sensitive to gases such as CO, opening opportunities for applications in sensing using one-dimensional nanostructure transistors [12]. The pyroelectric transistor reported in this issue represents an intriguing development for device applications of this versatile and ubiquitous electronics component [3]. As the researchers point out, 'By combining the photocurrent feature and optothermal gating effect, the wide range of response to light covering ultraviolet and infrared radiation can lead to new nanoscale optoelectronic devices that are suitable for remote or wireless applications.' In nanotechnology research and development, often the race is on to achieve reliable device behaviour in the smallest possible systems. But sometimes it is the innovations in the approach used that revolutionize technology in industry. The pyroelectric transistor reported in this issue is a neat example of the ingenious innovations in this field of research. While in research the race is never really over, as this work demonstrates the journey itself remains an inspiration. References [1] Bardeen J and Brattain W H 1948 The transistor, a semi-conductor triode Phys. Rev 74 230-1 [2] Shockley W B, Bardeen J and Brattain W H 1956 The nobel prize in physics www.nobelprize.org/nobel_prizes/physics/laureates/1956/# [3] Hsieh C-Y, Lu M-L, Chen J-Y, Chen Y-T, Chen Y-F, Shih W Y and Shih W-H 2012 Single ZnO nanowire-PZT optothermal field effect transistors Nanotechnology 23 355201 [4] Tans S J, Verschueren A R M and Dekker C 1998 Room-temperature transistor based on a single carbon nanotube Nature 393 49-52 [5] Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2003 High performance silicon nanowire field effect transistors Nano Lett. 3 149-52 [6]Stafford C A, Cardamone D M and Mazumdar S 2007 The quantum interference effect transistor Nanotechnology 18 424014 [7] Garnier F, Hajlaoui R, Yassar A and Srivastava P 1994 All-polymer field-effect transistor realized by printing techniques Science 265 1684-6 [8] Joung D, Chunder A, Zhai L and Khondaker S I 2010 High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis Nanotechnology 21 165202 [9] Bryllert T, Wernersson L-E, L¨owgren T and Samuelson L 2006 Vertical wrap-gated nanowire transistors Nanotechnology 17 S227-30 [10] Schulze A et al 2011 Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology 22 185701 [11] Moriyama N, Ohno Y, Kitamura T, Kishimoto S and Mizutani T 2010 Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges Nanotechnology 21 165201 [12] Bartolomeo A D, Rinzan M, Boyd A K, Yang Y, Guadagno L, Giubileo F and Barbara P 2010 Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes Nanotechnology 21 115204 [13] Liao L et al 2009 Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors Nanotechnology 20 085203

Doped Organic Transistors.

PubMed

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Probing organic field effect transistors in situ during operation using SFG.

PubMed

Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

2006-05-24

In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

Investigation of the Sensitivity, Selectivity, and Reversibility of the Chemically-Sensitive Field-Effect Transistor (CHEMFET) to Detect Nitrogen Dioxide, Dimethyl Methylphosphonate, and Boron Trifluoride

DTIC Science & Technology

1993-09-01

SENSITIVE FIELD- EFFECT TRANSISTOR (CHEMFET) TO DETECT NITROGEN DIOXIDE, DIMETHYL METHYLPHOSPHONATE, AND BORON TRIFLUORIDE CHAPTER 1 1 Introduction Our rapidly...AND REVERSIBILITY OF THE CHEMICALLY-SENSITIVE FIELD- EFFECT TRANSISTOR (CHEMFET) TO DETECT NITROGEN 3 E I1• DIOXIDE, DIMETHYL METHYLPHOSPHONATE, ELECTE...AND BORON TRIFLUORIDE Neal Terence Hauschild Second Lieutenant, USAF AFIT/GE/ENG/9 3S-10 93-23815I II11l11l11 l gll I 1i 1111 11 I DEPARTMENT OF THE

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

2007-03-01

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

PubMed

Park, Rebecca Sejung; Shulaker, Max Marcel; Hills, Gage; Suriyasena Liyanage, Luckshitha; Lee, Seunghyun; Tang, Alvin; Mitra, Subhasish; Wong, H-S Philip

2016-04-26

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Doped organic transistors operating in the inversion and depletion regime

PubMed Central

Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

2013-01-01

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santi, C. de; Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, G.

2014-08-18

With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

Graphene Field Effect Transistor for Radiation Detection

NASA Technical Reports Server (NTRS)

Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

2016-01-01

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Interaction of solid organic acids with carbon nanotube field effect transistors

NASA Astrophysics Data System (ADS)

Klinke, Christian; Afzali, Ali; Avouris, Phaedon

2006-10-01

A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotube field effect transistors with good transport characteristics.

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

NASA Astrophysics Data System (ADS)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Lead iodide perovskite light-emitting field-effect transistor

PubMed Central

Chin, Xin Yu; Cortecchia, Daniele; Yin, Jun; Bruno, Annalisa; Soci, Cesare

2015-01-01

Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature. PMID:26108967

A nanoscale piezoelectric transformer for low-voltage transistors.

PubMed

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Gallium nitride junction field-effect transistor

DOEpatents

Zolper, John C.; Shul, Randy J.

1999-01-01

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Energy-Saving Inverter

NASA Technical Reports Server (NTRS)

Rippel, W. E.; Edwards, D. B.

1984-01-01

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

PubMed

Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

2016-04-01

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Electrical coupling of single cardiac rat myocytes to field-effect and bipolar transistors.

PubMed

Kind, Thomas; Issing, Matthias; Arnold, Rüdiger; Müller, Bernt

2002-12-01

A novel bipolar transistor for extracellular recording the electrical activity of biological cells is presented, and the electrical behavior compared with the field-effect transistor (FET). Electrical coupling is examined between single cells separated from the heart of adults rats (cardiac myocytes) and both types of transistors. To initiate a local extracellular voltage, the cells are periodically stimulated by a patch pipette in voltage clamp and current clamp mode. The local extracellular voltage is measured by the planar integrated electronic sensors: the bipolar and the FET. The small signal transistor currents correspond to the local extracellular voltage. The two types of sensor transistors used here were developed and manufactured in the laboratory of our institute. The manufacturing process and the interfaces between myocytes and transistors are described. The recordings are interpreted by way of simulation based on the point-contact model and the single cardiac myocyte model.

Influence of polymer dielectrics on C60-based field-effect transistors

NASA Astrophysics Data System (ADS)

Zhou, Jianlin; Zhang, Fujia; Lan, Lifeng; Wen, Shangsheng; Peng, Junbiao

2007-12-01

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of C60 film and small number of traps at the interface of PMMA /C60 were obtained with high electron mobility of 0.66cm2/Vs in the PMMA transistor. The result suggests that the C60 semiconductor cooperating with polymer dielectric is a promising application in the fabrication of n-type organic transistors because of low threshold voltage and high electron mobility.

Improved Field-Effect Transistor Equations for Computer Simulation.

ERIC Educational Resources Information Center

Kidd, Richard; Ardini, James

1979-01-01

Presents a laboratory experiment that was developed to acquaint physics students with field-effect transistor characteristics and circuits. Computer-drawn curves supplementing student laboratory exercises can be generated to provide more permanent, usable data than those taken from a curve tracer. (HM)

Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications

PubMed Central

Abramova, Natalia; Bratov, Andrei

2009-01-01

Application of photocurable polymers for encapsulation of ion selective field effect transistors (ISFET) and for membrane formation in chemical sensitive field effect transistors (ChemFET) during the last 20 years is discussed. From a technological point of view these materials are quite interesting because they allow the use of standard photo-lithographic processes, which reduces significantly the time required for sensor encapsulation and membrane deposition and the amount of manual work required for this, all items of importance for sensor mass production. Problems associated with the application of this kind of polymers in sensors are analysed and estimation of future trends in this field of research are presented. PMID:22399988

Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

PubMed Central

Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2011-01-01

We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

PubMed

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

PubMed Central

Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

2015-01-01

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

Gallium nitride junction field-effect transistor

DOEpatents

Zolper, J.C.; Shul, R.J.

1999-02-02

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

NASA Astrophysics Data System (ADS)

Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

Current crowding mediated large contact noise in graphene field-effect transistors

PubMed Central

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-01-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

Progress of new label-free techniques for biosensors: a review.

PubMed

Sang, Shengbo; Wang, Yajun; Feng, Qiliang; Wei, Ye; Ji, Jianlong; Zhang, Wendong

2016-01-01

The detection techniques used in biosensors can be broadly classified into label-based and label-free. Label-based detection relies on the specific properties of labels for detecting a particular target. In contrast, label-free detection is suitable for the target molecules that are not labeled or the screening of analytes which are not easy to tag. Also, more types of label-free biosensors have emerged with developments in biotechnology. The latest developed techniques in label-free biosensors, such as field-effect transistors-based biosensors including carbon nanotube field-effect transistor biosensors, graphene field-effect transistor biosensors and silicon nanowire field-effect transistor biosensors, magnetoelastic biosensors, optical-based biosensors, surface stress-based biosensors and other type of biosensors based on the nanotechnology are discussed. The sensing principles, configurations, sensing performance, applications, advantages and restriction of different label-free based biosensors are considered and discussed in this review. Most concepts included in this survey could certainly be applied to the development of this kind of biosensor in the future.

Current crowding mediated large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-12-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

N-Heterocyclic-Carbene-Treated Gold Surfaces in Pentacene Organic Field-Effect Transistors: Improved Stability and Contact at the Interface.

PubMed

Lv, Aifeng; Freitag, Matthias; Chepiga, Kathryn M; Schäfer, Andreas H; Glorius, Frank; Chi, Lifeng

2018-04-16

N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge-carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene-Au interface was reduced by 85 %. Even after annealing the NHC-Au electrodes at 200 °C for 2 h before pentacene deposition, the charge-carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

PubMed

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

A Probe for Measuring Spacecraft Surface Potentials Using a Direct-Gate Field Effect Transistor.

DTIC Science & Technology

1983-09-30

SURFACE POTENTIALS USING A DIRECT-GATE FIELD EFFECT TRANSISTOR Mark N. Horenstein Anton Havretic Trustees of Boston University 881 Commonwealth Avenue...1933 Transistor 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(s) S. CONTRACT OR GRANT NUMBER(&) ’_5 Mark N. Horenstein Anton Mavretic F19628-82-K-00 34...at AFGL. These tests can be considered the bench mark tests for device performance, with all elements of the monitoring system optimized to eliminate

Integration of Organic Electrochemical and Field-Effect Transistors for Ultraflexible, High Temporal Resolution Electrophysiology Arrays.

PubMed

Lee, Wonryung; Kim, Dongmin; Rivnay, Jonathan; Matsuhisa, Naoji; Lonjaret, Thomas; Yokota, Tomoyuki; Yawo, Hiromu; Sekino, Masaki; Malliaras, George G; Someya, Takao

2016-11-01

Integration of organic electrochemical transistors and organic field-effect transistors is successfully realized on a 600 nm thick parylene film toward an electrophysiology array. A single cell of an integrated device and a 2 × 2 electrophysiology array succeed in detecting electromyogram with local stimulation of the motor nerve bundle of a transgenic rat by a laser pulse. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid.

PubMed

Elibol, Oguz H; Reddy, Bobby; Nair, Pradeep R; Dorvel, Brian; Butler, Felice; Ahsan, Zahab S; Bergstrom, Donald E; Alam, Muhammad A; Bashir, Rashid

2009-10-07

We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.

Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

NASA Technical Reports Server (NTRS)

MacLeod, Todd, C.; Ho, Fat Duen

2006-01-01

All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

Low noise tuned amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1984-01-01

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

PubMed

Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

2017-05-23

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

Light-Stimulated Synaptic Devices Utilizing Interfacial Effect of Organic Field-Effect Transistors.

PubMed

Dai, Shilei; Wu, Xiaohan; Liu, Dapeng; Chu, Yingli; Wang, Kai; Yang, Ben; Huang, Jia

2018-06-14

Synaptic transistors stimulated by light waves or photons may offer advantages to the devices, such as wide bandwidth, ultrafast signal transmission, and robustness. However, previously reported light-stimulated synaptic devices generally require special photoelectric properties from the semiconductors and sophisticated device's architectures. In this work, a simple and effective strategy for fabricating light-stimulated synaptic transistors is provided by utilizing interface charge trapping effect of organic field-effect transistors (OFETs). Significantly, our devices exhibited highly synapselike behaviors, such as excitatory postsynaptic current (EPSC) and pair-pulse facilitation (PPF), and presented memory and learning ability. The EPSC decay, PPF curves, and forgetting behavior can be well expressed by mathematical equations for synaptic devices, indicating that interfacial charge trapping effect of OFETs can be utilized as a reliable strategy to realize organic light-stimulated synapses. Therefore, this work provides a simple and effective strategy for fabricating light-stimulated synaptic transistors with both memory and learning ability, which enlightens a new direction for developing neuromorphic devices.

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.

PubMed

Kim, Jong Su; Kim, Beom Joon; Choi, Young Jin; Lee, Moo Hyung; Kang, Moon Sung; Cho, Jeong Ho

2016-06-01

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

PubMed

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Method for Providing Semiconductors Having Self-Aligned Ion Implant

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor)

2014-01-01

A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

Method for Providing Semiconductors Having Self-Aligned Ion Implant

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor)

2011-01-01

A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Bailey, Mark; Ho, Fat Duen

2004-01-01

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Detection beyond Debye's length with an electrolyte-gated organic field-effect transistor.

PubMed

Palazzo, Gerardo; De Tullio, Donato; Magliulo, Maria; Mallardi, Antonia; Intranuovo, Francesca; Mulla, Mohammad Yusuf; Favia, Pietro; Vikholm-Lundin, Inger; Torsi, Luisa

2015-02-04

Electrolyte-gated organic field-effect transistors are successfully used as biosensors to detect binding events occurring at distances from the transistor electronic channel that are much larger than the Debye length in highly concentrated solutions. The sensing mechanism is mainly capacitive and is due to the formation of Donnan's equilibria within the protein layer, leading to an extra capacitance (CDON) in series to the gating system. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

NASA Technical Reports Server (NTRS)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Organic field-effect transistors using single crystals.

PubMed

Hasegawa, Tatsuo; Takeya, Jun

2009-04-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

Organic field-effect transistors using single crystals

PubMed Central

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for ‘plastic electronics’. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. PMID:27877287

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pasadas, Francisco, E-mail: Francisco.Pasadas@uab.cat; Jiménez, David

2015-12-28

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been includedmore » considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.« less

Localized Heating on Silicon Field Effect Transistors: Device Fabrication and Temperature Measurements in Fluid

PubMed Central

Elibol, Oguz H.; Reddy, Bobby; Nair, Pradeep R.; Dorvel, Brian; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2010-01-01

We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications. PMID:19967115

Single event burnout sensitivity of embedded field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koga, R.; Crain, S.H.; Crawford, K.B.

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

Single event burnout sensitivity of embedded field effect transistors

NASA Astrophysics Data System (ADS)

Koga, R.; Crain, S. H.; Crawford, K. B.; Yu, P.; Gordon, M. J.

1999-12-01

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

DOEpatents

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

NASA Astrophysics Data System (ADS)

Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

2006-10-01

Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

PubMed

Szafranek, B N; Schall, D; Otto, M; Neumaier, D; Kurz, H

2011-07-13

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low-temperature measurements indicate that the increased on/off ratio is caused by the opening of a mobility gap.

Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

PubMed

Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

2014-11-01

High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Treesearch

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2015-01-01

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.

PubMed

Passi, Vikram; Gahoi, Amit; Senkovskiy, Boris V; Haberer, Danny; Fischer, Felix R; Grüneis, Alexander; Lemme, Max C

2018-03-28

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I ON / I OFF current ratio of 87.5.

Fabrication of metal nanopatterns for organic field effect transistor electrodes by cracking and transfer printing

NASA Astrophysics Data System (ADS)

Wang, Xiaonan; Fu, Tingting; Wang, Zhe

2018-04-01

In this paper, we demonstrate a novel method for fabricating metal nanopatterns using cracking to address the limitations of traditional techniques. Parallel crack arrays were created in a polydimethylsiloxane (PDMS) mold using a combination of surface modification and control of strain fields. The elastic PDMS containing the crack arrays was subsequently used as a stamp to prepare nanoscale metal patterns on a substrate by transfer printing. To illustrate the functionality of this technique, we employed the metal patterns as the source and drain contacts of an organic field effect transistor. Using this approach, we fabricated transistors with channel lengths ranging from 70-600 nm. The performance of these devices when the channel length was reduced was studied. The drive current density increases as expected, indicating the creation of operational transistors with recognizable properties.

The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics

NASA Astrophysics Data System (ADS)

Chang, Ingram Yin-ku; Chen, Chun-Heng; Chiu, Fu-Chien; Lee, Joseph Ya-min

2007-11-01

Metal-oxide-semiconductor field-effect transistors with CeO2/HfO2 laminated gate dielectrics were fabricated. The transistors have a subthreshold slope of 74.9mV/decade. The interfacial properties were measured using gated diodes. The surface state density Dit was 9.78×1011cm-2eV-1. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diode were about 6.11×103cm /s and 1.8×10-8s, respectively. The effective capture cross section of surface state (σs) extracted using the subthreshold-swing measurement and the gated diode was about 7.69×10-15cm2. The effective electron mobility of CeO2/HfO2 laminated gated transistors was determined to be 212cm2/Vs.

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

NASA Astrophysics Data System (ADS)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

Current saturation and voltage gain in bilayer graphene field effect transistors.

PubMed

Szafranek, B N; Fiori, G; Schall, D; Neumaier, D; Kurz, H

2012-03-14

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. © 2012 American Chemical Society

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

PubMed

Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

2014-02-28

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

Ordered polymer nanofibers enhance output brightness in bilayer light-emitting field-effect transistors.

PubMed

Hsu, Ben B Y; Seifter, Jason; Takacs, Christopher J; Zhong, Chengmei; Tseng, Hsin-Rong; Samuel, Ifor D W; Namdas, Ebinazar B; Bazan, Guillermo C; Huang, Fei; Cao, Yong; Heeger, Alan J

2013-03-26

Polymer light emitting field effect transistors are a class of light emitting devices that reveal interesting device physics. Device performance can be directly correlated to the most fundamental polymer science. Control over surface properties of the transistor dielectric can dramatically change the polymer morphology, introducing ordered phase. Electronic properties such as carrier mobility and injection efficiency on the interface can be promoted by ordered nanofibers in the polymer. Moreover, by controlling space charge in the polymer interface, the recombination zone can be spatially extended and thereby enhance the optical output.

Analytic model for low-frequency noise in nanorod devices.

PubMed

Lee, Jungil; Yu, Byung Yong; Han, Ilki; Choi, Kyoung Jin; Ghibaudo, Gerard

2008-10-01

In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f noise. In dual gate transistors, the interface states and oxide traps can compete with each other as the main noise source via random walk and tunneling, respectively.

Conjugated polymers and their use in optoelectronic devices

DOEpatents

Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

2016-10-18

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

PubMed

Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

2016-12-01

A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mixed protonic and electronic conductors hybrid oxide synaptic transistors

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Zhu, Li Qiang; Wen, Juan; Xiao, Hui; Liu, Rui

2017-05-01

Mixed ionic and electronic conductor hybrid devices have attracted widespread attention in the field of brain-inspired neuromorphic systems. Here, mixed protonic and electronic conductor (MPEC) hybrid indium-tungsten-oxide (IWO) synaptic transistors gated by nanogranular phosphorosilicate glass (PSG) based electrolytes were obtained. Unique field-configurable proton self-modulation behaviors were observed on the MPEC hybrid transistor with extremely strong interfacial electric-double-layer effects. Temporally coupled synaptic plasticities were demonstrated on the MPEC hybrid IWO synaptic transistor, including depolarization/hyperpolarization, synaptic facilitation and depression, facilitation-stead/depression-stead behaviors, spiking rate dependent plasticity, and high-pass/low-pass synaptic filtering behaviors. MPEC hybrid synaptic transistors may find potential applications in neuron-inspired platforms.

An innovative large scale integration of silicon nanowire-based field effect transistors

NASA Astrophysics Data System (ADS)

Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

2018-05-01

Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

pH-sensitive ion-selective field-effect transistor with zirconium dioxide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlasov, Yu.G.; Bratov, A.V.; Tarantov, Yu.A.

1988-09-20

Miniature semiconductor pH sensors for liquid media, i.e., ion-selective field-effect transistors (ISFETs), are silicon field-effect transistors with a two-layer dielectric consisting of a passivating SiO/sub 2/ layer adjoining the silicon and a layer of pH-sensitive material in contact with the electrolyte solution to be tested. This study was devoted to the characteristics of pH-sensitive ISFETs with ZrO/sub 2/ films. The base was p-type silicon (KDB-10) with a (100) surface orientation. A ZrO/sub 2/ layer 10-50 nm thick was applied over the SiO/sub 2/ layer by electron-beam deposition. The measurements were made in aqueous KNO/sub 3/ or KCl solutions.

A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

PubMed Central

Chen, Dajing; Lei, Sheng; Chen, Yuquan

2011-01-01

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications

NASA Astrophysics Data System (ADS)

Cao, Jingchen; Peng, Songang; Liu, Wei; Wu, Quantan; Li, Ling; Geng, Di; Yang, Guanhua; Ji, Zhouyu; Lu, Nianduan; Liu, Ming

2018-02-01

We present a continuous surface-potential-based compact model for molybdenum disulfide (MoS2) field effect transistors based on the multiple trapping release theory and the variable-range hopping theory. We also built contact resistance and velocity saturation models based on the analytical surface potential. This model is verified with experimental data and is able to accurately predict the temperature dependent behavior of the MoS2 field effect transistor. Our compact model is coded in Verilog-A, which can be implemented in a computer-aided design environment. Finally, we carried out an active matrix display simulation, which suggested that the proposed model can be successfully applied to circuit design.

Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Bhargava, Kshitij; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2016-11-01

Formation of a stable, reproducible zinc oxide (ZnO) nanorod-network-based photosensitive field-effect transistor using a hydrothermal process at low temperature has been demonstrated. K2Cr2O7 additive was used to improve adhesion and facilitate growth of the ZnO nanorod network over the SiO2/Si substrate. Transistor characteristics obtained in the dark resemble those of the n-channel-mode field-effect transistor (FET). The devices showed I on/ I off ratio above 8 × 102 under dark condition, field-effect mobility of 4.49 cm2 V-1 s-1, and threshold voltage of -12 V. Further, under ultraviolet (UV) illumination, the FET exhibited sensitivity of 2.7 × 102 in off-state (-10 V) versus 1.4 in on-state (+9.7 V) of operation. FETs based on such nanorod networks showed good photoresponse, which is attributed to the large surface area of the nanorod network. The growth temperature for ZnO nanorod networks was kept at 110°C, enabling a low-temperature, cost-effective, simple approach for high-performance ZnO-based FETs for large-scale production. The role of network interfaces in the FET performance is also discussed.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Tanaka, Takahisa; Uchida, Ken

2018-06-01

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE PAGES

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; ...

2017-02-27

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

NASA Astrophysics Data System (ADS)

Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

2018-05-01

We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

Fully transparent conformal organic thin-film transistor array and its application as LED front driving.

PubMed

Cui, Nan; Ren, Hang; Tang, Qingxin; Zhao, Xiaoli; Tong, Yanhong; Hu, Wenping; Liu, Yichun

2018-02-22

A fully transparent conformal organic thin-film field-effect transistor array is demonstrated based on a photolithography-compatible ultrathin metallic grid gate electrode and a solution-processed C 8 -BTBT film. The resulting organic field-effect transistor array exhibits a high optical transparency of >80% over the visible spectrum, mobility up to 2 cm 2 V -1 s -1 , on/off ratio of 10 5 -10 6 , switching current of >0.1 mA, and excellent light stability. The transparent conformal transistor array is demonstrated to adhere well to flat and curved LEDs as front driving. These results present promising applications of the solution-processed wide-bandgap organic semiconductor thin films in future large-scale transparent conformal active-matrix displays.

Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

PubMed

Nazir, Ghazanfar; Khan, Muhammad Farooq; Aftab, Sikandar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Rehman, Malik Abdul; Seo, Yongho; Eom, Jonghwa

2017-12-28

Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (R vert ) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (R planar ) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for various thicknesses of MoS₂ channels in both vertical and lateral transistors. As the thickness of MoS₂ increases, R vert increases, but R planar decreases. The increase of R vert in the thicker MoS₂ film is attributed to the interlayer resistance in the vertical direction. However, R planar shows a lower value for a thicker MoS₂ film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

Patterning technology for solution-processed organic crystal field-effect transistors

PubMed Central

Li, Yun; Sun, Huabin; Shi, Yi; Tsukagoshi, Kazuhito

2014-01-01

Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recentdevelopment in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed. PMID:27877656

Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue

2017-08-01

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.

PubMed

Yi, H T; Chen, Y; Czelen, K; Podzorov, V

2011-12-22

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current and emerging challenges of field effect transistor based bio-sensing

NASA Astrophysics Data System (ADS)

Matsumoto, Akira; Miyahara, Yuji

2013-10-01

Field-effect-transistor (FET) based electrical signal transduction is an increasingly prevalent strategy for bio-sensing. This technique, often termed ``Bio-FETs'', provides an essentially label-free and real-time based bio-sensing platform effective for a variety of targets. This review highlights recent progress and challenges in the field. A special focus is on the comprehension of emerging nanotechnology-based approaches to facilitate signal-transduction and amplification. Some new targets of Bio-FETs and the future perspectives are also discussed.

Current and emerging challenges of field effect transistor based bio-sensing.

PubMed

Matsumoto, Akira; Miyahara, Yuji

2013-11-21

Field-effect-transistor (FET) based electrical signal transduction is an increasingly prevalent strategy for bio-sensing. This technique, often termed "Bio-FETs", provides an essentially label-free and real-time based bio-sensing platform effective for a variety of targets. This review highlights recent progress and challenges in the field. A special focus is on the comprehension of emerging nanotechnology-based approaches to facilitate signal-transduction and amplification. Some new targets of Bio-FETs and the future perspectives are also discussed.

Application of the Johnson criteria to graphene transistors

NASA Astrophysics Data System (ADS)

Kelly, M. J.

2013-12-01

For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications.

Assessment of Phospohrene Field Effect Transistors

DTIC Science & Technology

2018-01-28

electronics industry. To this end, transistor test structures would initially be fabricated on phosphorene exfoliated from black phosphorus and, later, on...34Phosphorene FETs-Promising Transistors Based on a few Layers of Phosphorus Atoms," Nanjing Electronic Devices Institute, Nanjing, China, Jul. 2015...OH, Nov. 2015. J.C. M. Hwang, "Phosphorene Transistors-Transient or Lasting Electronics ?" Workshop Frontier Electronics , San Juan, PR, Dec. 2015

MOSFET's for Cryogenic Amplifiers

NASA Technical Reports Server (NTRS)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

Efficient G(sup 4)FET-Based Logic Circuits

NASA Technical Reports Server (NTRS)

Vatan, Farrokh

2008-01-01

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

NASA Astrophysics Data System (ADS)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Electrically Erasable Programmable Integrated Circuits for Replacement of Obsolete TTL Logic

DTIC Science & Technology

1991-12-01

different discrete devices" [7]. Fowler-Nordheim Tunneling Simplified Theory. Electrons in polysilicon are usually prevented from entering SiO 2 by an...overcomes the energy barrier, the tunneling electrons will not return to the polysilicon but will be carried by the electric field, causing a current to flow...Floating Gate Transistors A floating gate transistor is an insulated-gate field effect transistor (FET) that has a gate, usually made of polysilicon , which

Nanopore extended field-effect transistor for selective single-molecule biosensing.

PubMed

Ren, Ren; Zhang, Yanjun; Nadappuram, Binoy Paulose; Akpinar, Bernice; Klenerman, David; Ivanov, Aleksandar P; Edel, Joshua B; Korchev, Yuri

2017-09-19

There has been a significant drive to deliver nanotechnological solutions to biosensing, yet there remains an unmet need in the development of biosensors that are affordable, integrated, fast, capable of multiplexed detection, and offer high selectivity for trace analyte detection in biological fluids. Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. We report on a polypyrrole functionalized nexFET, with controllable gate voltage that can be used to switch on/off, and slow down single-molecule DNA transport through a nanopore. This strategy enables higher molecular throughput, enhanced signal-to-noise, and even heightened selectivity via functionalization with an embedded receptor. This is shown for selective sensing of an anti-insulin antibody in the presence of its IgG isotype.Efficient detection of single molecules is vital to many biosensing technologies, which require analytical platforms with high selectivity and sensitivity. Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates DNA and protein transport through the nanopore.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

DOEpatents

Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

2015-11-03

The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

PubMed

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

PubMed

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

PubMed

Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

2017-05-05

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

NASA Astrophysics Data System (ADS)

Bartsch, S. T.; Rusu, A.; Ionescu, A. M.

2012-10-01

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne frequency down-conversion based on resistive FET mixing provides a loop feedback signal with high signal-to-noise ratio. We identify key parameters for PLL operation, and analyze the performance of the RB-FET at the system level. Used as resonant mass detector, the experimental frequency stability in the ppm-range translates into sub atto-gram (10-18 g) sensitivity in high vacuum. The feedback and control system are generic and may be extended to other mechanical resonators with transistor properties, such as graphene membranes and carbon nanotubes.

Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide

NASA Astrophysics Data System (ADS)

Butko, A. V.; Butko, V. Yu.; Lebedev, S. P.; Lebedev, A. A.; Kumzerov, Yu. A.

2017-10-01

For the creation of new promising chemical sensors, it is very important to study the influence of the interface between graphene and aqueous solutions of acids and alkalis on the transistor characteristics of graphene. Transistor structures on the basis of graphene grown by thermal decomposition of silicon carbide were created and studied. For the interface of graphene with aqueous solutions of acetic acid and potassium hydroxide in the transistor geometry, with a variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carriers in graphene was observed. It is established that an increase in the concentration of molecular ions in these solutions leads to an increase in the dependence of the resistance of the transistor on the gate voltage.

Theory and Device Modeling for Nano-Structured Transistor Channels

DTIC Science & Technology

2011-06-01

zinc oxide ( ZnO ) thin film transistors ( TFTs ) that contain nanocrystalline grains on the order of ~20nm. The authors of ref. 1 present results...problem in order to determine the threshold voltage. 15. SUBJECT TERMS nano-structured transistor , mesoscopic, zinc oxide , ZnO , field-effect...and R. Neidhard, “Microwave ZnO Thin - Film Transistors ”, IEEE Electron Dev. Lett. 29, 1024 (2008); doi: 10.1109/LED.2008.2001635.

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Graphene-based field-effect transistor biosensors

DOEpatents

Chen; , Junhong; Mao, Shun; Lu, Ganhua

2017-06-14

The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

Low-voltage self-assembled monolayer field-effect transistors on flexible substrates.

PubMed

Schmaltz, Thomas; Amin, Atefeh Y; Khassanov, Artoem; Meyer-Friedrichsen, Timo; Steinrück, Hans-Georg; Magerl, Andreas; Segura, Juan José; Voitchovsky, Kislon; Stellacci, Francesco; Halik, Marcus

2013-08-27

Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10(-2) cm(2) V(-1) s(-1) and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Hafnium transistor design for neural interfacing.

PubMed

Parent, David W; Basham, Eric J

2008-01-01

A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

NASA Astrophysics Data System (ADS)

Chianese, F.; Candini, A.; Affronte, M.; Mishra, N.; Coletti, C.; Cassinese, A.

2018-05-01

In this work, we test graphene electrodes in nanometric channel n-type Organic Field Effect Transistors (OFETs) based on thermally evaporated thin films of the perylene-3,4,9,10-tetracarboxylic acid diimide derivative. By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond linearly to the applied bias, in contrast with the supralinear trend of gold-based transistors. Moreover, short channel effects are considerably suppressed in graphene electrode devices. More specifically, current on/off ratios independent of the channel length (L) and enhanced response for high longitudinal biases are demonstrated for L down to ˜140 nm. These results are rationalized taking into account the morphological and electronic characteristics of graphene, showing that the use of graphene electrodes may help to overcome the problem of Space Charge Limited Current in short channel OFETs.

Vertical field-effect transistor based on wave-function extension

NASA Astrophysics Data System (ADS)

Sciambi, A.; Pelliccione, M.; Lilly, M. P.; Bank, S. R.; Gossard, A. C.; Pfeiffer, L. N.; West, K. W.; Goldhaber-Gordon, D.

2011-08-01

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

JFET/SOS (Junction Field-Effect Transistor/Silicon-on-Sapphire) Devices: Gamma-Radiation-Induced Effects.

DTIC Science & Technology

1988-03-01

Results, ATR-86A(8501)-1, The Aerospace Corporation: El Segundo, Calif. (20 May 1987). 3. D. Neaman , W. Shedd, and B. Buchanan, "Permanently Ionizing...Radiation Effects in Dielectrically Bounded Field-Effect Transistors," IEEE Trans.. Nucl. Sci. NS-20 [6], 158-165 (Decembe. 1973). 4. D. Neaman , W. Shedd...1974). 5. D. Neaman , W. Shedd, and B. Buchanan, "Silicon-Sapphire Interface Charge Trapping -- Effects of Sapphire Type and Epi Growth Conditions

Intrinsically stretchable and healable semiconducting polymer for organic transistors

NASA Astrophysics Data System (ADS)

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

2016-11-01

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

Intrinsically stretchable and healable semiconducting polymer for organic transistors.

PubMed

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

2016-11-17

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors

PubMed Central

Stern, Eric; Wagner, Robin; Sigworth, Fred J.; Breaker, Ronald; Fahmy, Tarek M.; Reed, Mark A.

2009-01-01

Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we show the appropriate conditions under which the selective binding of macromolecules is accurately sensed with NW-FET sensors. PMID:17914853

Importance of the Debye screening length on nanowire field effect transistor sensors.

PubMed

Stern, Eric; Wagner, Robin; Sigworth, Fred J; Breaker, Ronald; Fahmy, Tarek M; Reed, Mark A

2007-11-01

Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we show the appropriate conditions under which the selective binding of macromolecules is accurately sensed with NW-FET sensors.

Study of zeolite influence on analytical characteristics of urea biosensor based on ion-selective field-effect transistors

PubMed Central

2014-01-01

A possibility of the creation of potentiometric biosensor by adsorption of enzyme urease on zeolite was investigated. Several variants of zeolites (nano beta, calcinated nano beta, silicalite, and nano L) were chosen for experiments. The surface of pH-sensitive field-effect transistors was modified with particles of zeolites, and then the enzyme was adsorbed. As a control, we used the method of enzyme immobilization in glutaraldehyde vapour (without zeolites). It was shown that all used zeolites can serve as adsorbents (with different effectiveness). The biosensors obtained by urease adsorption on zeolites were characterized by good analytical parameters (signal reproducibility, linear range, detection limit and the minimal drift factor of a baseline). In this work, it was shown that modification of the surface of pH-sensitive field-effect transistors with zeolites can improve some characteristics of biosensors. PMID:24636423

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.

25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

PubMed Central

Sirringhaus, Henning

2014-01-01

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

P-type field effect transistor based on Na-doped BaSnO3

NASA Astrophysics Data System (ADS)

Jang, Yeaju; Hong, Sungyun; Park, Jisung; Char, Kookrin

We fabricated field effect transistors (FET) based on the p-type Na-doped BaSnO3 (BNSO) channel layer. The properties of epitaxial BNSO channel layer were controlled by the doping rate. In order to modulate the p-type FET, we used amorphous HfOx and epitaxial BaHfO3 (BHO) gate oxides, both of which have high dielectric constants. HfOx was deposited by atomic-layer-deposition and BHO was epitaxially grown by pulsed laser deposition. The pulsed laser deposited SrRuO3 (SRO) was used as the source and the drain contacts. Indium-tin oxide and La-doped BaSnO3 were used as the gate electrodes on top of the HfOx and the BHO gate oxides, respectively. We will analyze and present the performances of the BNSO field effect transistor such as the IDS-VDS, the IDS-VGS, the Ion/Ioff ratio, and the field effect mobility. Samsung Science and Technology Foundation.

Solution-processed field-effect transistors based on dihexylquaterthiophene films with performances exceeding those of vacuum-sublimed films.

PubMed

Leydecker, Tim; Trong Duong, Duc; Salleo, Alberto; Orgiu, Emanuele; Samorì, Paolo

2014-12-10

Solution-processable oligothiophenes are model systems for charge transport and fabrication of organic field-effect transistors (OFET) . Herein we report a structure vs function relationship study focused on the electrical characteristics of solution-processed dihexylquaterthiophene (DH4T)-based OFET. We show that by combining the tailoring of all interfaces in the bottom-contact bottom-gate transistor, via chemisorption of ad hoc molecules on electrodes and dielectric, with suitable choice of the film preparation conditions (including solvent type, concentration, volume, and deposition method), it is possible to fabricate devices exhibiting field-effect mobilities exceeding those of vacuum-processed DH4T transistors. In particular, the evaporation rate of the solvent, the processing temperature, as well as the concentration of the semiconducting material were found to hold a paramount importance in driving the self-assembly toward the formation of highly ordered and low-dimensional supramolecular architectures, confirming the kinetically governed nature of the self-assembly process. Among the various architectures, hundreds-of-micrometers long and thin DH4T crystallites exhibited enhanced charge transport.

Improvement and Analysis of the Radiation Response of RADFET Dosimeters

DTIC Science & Technology

1992-06-15

TLD ), silicon p-i-n diode responses and silicon calorimetry (AWE Dosimetry Service). Intensive preparations were made by REM and the experiments were...SUB-GROUP dose: RADFET : tactical dosimetry silicon : metal-oxide- 0705 emiconductor (MOS) field effect transistor (FET) : silicon Idioxide space...1.1 Principle of a dosimetry system, based on the RADFET (radiation-sensitive field-effect transistor) (a) microscopic cross-section of chip (b) chip

Synthesis of organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene for efficient monolayer Langmuir-Blodgett organic field effect transistors.

PubMed

Borshchev, O V; Sizov, A S; Agina, E V; Bessonov, A A; Ponomarenko, S A

2017-01-16

For the first time, the synthesis of organosilicon derivatives of dialkyl[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) capable of forming a semiconducting monolayer at the water-air interface is reported. Self-assembled monolayer organic field-effect transistors prepared from these materials using the Langmuir-Blodgett technique showed high hole mobilities and excellent air stability.

Silicon Carbide Transistor For Detecting Hydrocarbon Gases

NASA Technical Reports Server (NTRS)

Shields, Virgil B.; Ryan, Margaret A.; Williams, Roger M.

1996-01-01

Proposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naquin, Clint; Lee, Mark; Edwards, Hal

2014-11-24

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility ofmore » exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.« less

High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Yun Ji; Kim, Seung Mo; Heo, Sunwoo; Lee, Hyeji; In Lee, Ho; Chang, Kyoung Eun; Lee, Byoung Hun

2018-02-01

High-pressure annealing in oxygen ambient at low temperatures (∼300 °C) was effective in improving the performance of graphene field-effect transistors. The field-effect mobility was improved by 45% and 83% for holes and electrons, respectively. The improvement in the quality of Al2O3 and the reduction in oxygen-related charge generation at the Al2O3-graphene interface, are suggested as the reasons for this improvement. This process can be useful for the commercial implementation of graphene-based electronic devices.

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Phase transition and field effect topological quantum transistor made of monolayer MoS2

NASA Astrophysics Data System (ADS)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

PubMed

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

NASA Astrophysics Data System (ADS)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-01

Top-gated and bottom-gated transistors with multilayer MoS2 channel fully encapsulated by stacked Al2O3/HfO2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on–off current ratio of 108, high field-effect mobility of 102 cm2 V‑1 s‑1, and low subthreshold swing of 93 mV dec–1. Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10‑3–10‑2 V MV–1 cm–1 after 6 MV cm‑1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS2 channel fully encapsulated by stacked Al2O3/HfO2 is a promising way to fabricate high-performance ML MoS2 field-effect transistors for practical electron device applications.

Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Sung Hun, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu; Shin, Jongmin; Cho, In-Tak

2014-07-07

This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstratemore » physical transience within 30 min.« less

Nature of size effects in compact models of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torkhov, N. A., E-mail: trkf@mail.ru; Scientific-Research Institute of Semiconductor Devices, Tomsk 634050; Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050

Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of themore » equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.« less

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

NASA Technical Reports Server (NTRS)

Boutte, Alvin J.; Campola, Michael J.; Carts, Martin A.; Wilcox, Edward P.; Marshall, Cheryl J.; Phan, Anthony M.; Pellish, Jonathan A.; Powell, Wesley A.; Xapsos, Michael A.

2012-01-01

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2013-11-25

a ballistic one-dimensional conductor is / = £>(£) ■ VgiE)[fR(E) - fdEME , (1) where Vg(E) is the group velocity, D(E) is the density of states... AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors...SCIENCES LABORATORIES The Aerospace Corporation functions as an "architect-engineer" for national security programs, specializing in advanced military

Fabrication of High-Performance Polymer Bulk-Heterojunction Solar Cells by the Interfacial Modifications III

DTIC Science & Technology

2011-04-30

University of Tennessee) 3. "An ambipolar to n-type transformation in pentacene -based organic field-effect transistors" Org. Electron. 12, 509 (2011...OFETs). An ambipolar to n-type transformation in pentacene -based organic field-effect transistors (OFETs) of Al source-drain electrodes had been...correlated with the interfacial interactions between Al electrodes and pentacene , as characterized by analyzing Near-edge X-ray absorption fine structure

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

NASA Astrophysics Data System (ADS)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J.; Hersam, Mark C.

2016-02-01

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8 μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Accurate description of charge transport in organic field effect transistors using an experimentally extracted density of states

NASA Astrophysics Data System (ADS)

Roelofs, W. S. C.; Mathijssen, S. G. J.; Janssen, R. A. J.; de Leeuw, D. M.; Kemerink, M.

2012-02-01

The width and shape of the density of states (DOS) are key parameters to describe the charge transport of organic semiconductors. Here we extract the DOS using scanning Kelvin probe microscopy on a self-assembled monolayer field effect transistor (SAMFET). The semiconductor is only a single monolayer which has allowed extraction of the DOS over a wide energy range, pushing the methodology to its fundamental limit. The measured DOS consists of an exponential distribution of deep states with additional localized states on top. The charge transport has been calculated in a generic variable range-hopping model that allows any DOS as input. We show that with the experimentally extracted DOS an excellent agreement between measured and calculated transfer curves is obtained. This shows that detailed knowledge of the density of states is a prerequisite to consistently describe the transfer characteristics of organic field effect transistors.

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

PubMed Central

Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

2012-01-01

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field-Effect Transistors.

PubMed

Li, Dehui; Cheng, Hung-Chieh; Wang, Yiliu; Zhao, Zipeng; Wang, Gongming; Wu, Hao; He, Qiyuan; Huang, Yu; Duan, Xiangfeng

2017-01-01

Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH 3 NH 3 PbI 3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The analysis of ion-selective field-effect transistor operation in chemical sensors

NASA Astrophysics Data System (ADS)

Hotra, Zenon; Holyaka, Roman; Hladun, Michael; Humenuk, Iryna

2003-09-01

In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanne, A.; Movva, H. C. P.; Kang, S.

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriersmore » as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.« less

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

2009-01-01

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics on Flexible Substrates

PubMed Central

Tetzner, Kornelius; Bose, Indranil R.; Bock, Karlheinz

2014-01-01

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor. PMID:28788243

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates.

PubMed

Tetzner, Kornelius; Bose, Indranil R; Bock, Karlheinz

2014-10-29

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.

Coupling between Transport and Injection Properties of Pentacene Field-Effect Transistors with Different Morphologies

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-08-01

We investigated the injection and transport properties of pentacene organic field-effect transistors (OFETs) with inclined and lamellar pentacene grains at various mutual ratios. Although the threshold voltage was conserved and no additional trapping on grain boundaries was suggested from the current-voltage measurements, the contact resistance and mobility increased linearly with the lamellar phase content. We showed that a model based on the coupling between both transport and injection properties via a space charge field caused by injected and trapped carriers accounts for these results.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

NASA Technical Reports Server (NTRS)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

NASA Astrophysics Data System (ADS)

Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

2010-01-01

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

Graphene-based flexible and stretchable thin film transistors.

PubMed

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Tsai, Shin-Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-Yang; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-11-01

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS 2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS 2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Matsumoto, Taisuke; Ohishi, Yuya

A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

PubMed Central

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

Vertical GaN Devices for Power Electronics in Extreme Environments

DTIC Science & Technology

2016-03-31

electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...holes in p-GaN has deleterious effect on p-n junction behavior (Fig. 2), p-GaN contacts, and channel control in junction field-effect transistors at...and transistors ) utilizing p-n junctions are suitable for most practical applications including automotive (210K < T < 423K) but may have limitations

Highly sensitive protein detection using a plasmonic field effect transistor (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shokri-Kojori, Hossein; Ji, Yiwen; Han, Xu; Paik, Younghun; Braunschweig, Adam; Kim, Sung Jin

2016-03-01

Localized surface Plasmon Resonance (LSPR) is a nanoscale phenomenon which presents strong resonance associated with noble metal nanostructures. This plasmon resonance based technology enables highly sensitive detection for chemical and biological applications. Recently, we have developed a plasmon field effect transistor (FET) that enables direct plasmonic-to-electric signal conversion with signal amplification. The plasmon FET consists of back-gated field effect transistor incorporated with gold nanoparticles on top of the FET channel. The gold nanostructures are physically separated from transistor electrodes and can be functionalized for a specific biological application. In this presentation, we report a successful demonstration of a model system to detect Con A proteins using Carbohydrate linkers as a capture molecule. The plasmon FET detected a very low concentration of Con A (0.006 mg/L) while it offers a wide dynamic range of 0.006-50 mg/L. In this demonstration, we used two-color light sources instead of a bulky spectrometer to achieve high sensitivity and wide dynamic range. The details of two-color based differential measurement method will be discussed. This novel protein-based sensor has several advantages such as extremely small size for point-of-care system, multiplexing capability, no need of complex optical geometry.

Electrical characteristics of organic perylene single-crystal-based field-effect transistors

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kang, Han-Saem; Kim, Min-Ki; Kim, Kihyun; Cho, Mi-Yeon; Kwon, Young-Wan; Joo, Jinsoo; Kim, Jae-Il; Hong, Chang-Seop

2007-12-01

We report on the fabrication of organic field-effect transistors (OFETs) using perylene single crystal as the active material and their electrical characteristics. Perylene single crystals were directly grown from perylene powder in a furnace using a relatively short growth time of 1-3 h. The crystalline structure of the perylene single crystals was characterized by means of a single-crystal x-ray diffractometer. In order to place the perylene single crystal onto the Au electrodes of the field-effect transistor, a polymethlymethacrylate thin layer was spin-coated on top of the crystal surface. The OFETs fabricated using the perylene single crystal showed a typical p-type operating mode. The field-effect mobility of the perylene crystal based OFETs was measured to be ˜9.62×10-4 cm2/V s at room temperature. The anisotropy of the mobility implying the existence of different mobilities when applying currents in different directions was observed for the OFETs, and the existence of traps in the perylene crystal was found through the measurements of the temperature-dependent mobility at various operating drain voltages.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

PubMed

Sirringhaus, Henning

2014-03-05

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3-4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm(2) V(-1) s(-1) have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

PubMed

Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

2015-03-11

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors.

PubMed

Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

2012-10-24

Composite films of pentacene and a series of azobenzene derivatives are prepared and used as the active channel material in top-contact, bottom-gate field-effect transistors. The transistors exhibit high field-effect mobility as well as large I-V hysteresis as a function of the gate bias history. The azobenzene moieties, incorporated either in the form of self-assembled monolayer or discrete multilayer clusters at the dielectric surface, result in electric bistability of the pentacene-based transistor either by photoexcitation or gate biasing. The direction of threshold voltage shifts, size of hysteresis, response time, and retention characteristics all strongly depend on the substituent on the benzene ring. The results show that introducing a monolayer of azobenzene moieties results in formation of charge carrier traps responsible for slower switching between the bistable states and longer retention time. With clusters of azobenzene moieties as the trap sites, the switching is faster but the retention is shorter. Detailed film structure analyses and correlation with the transistor/memory properties of these devices are provided.

Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

NASA Astrophysics Data System (ADS)

Hu, Zhaoying; Tulevski, George S.; Hannon, James B.; Afzali, Ali; Liehr, Michael; Park, Hongsik

2015-06-01

Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effects of the number of CNTs on device performance can aid in the design of CNT field-effect transistors (CNTFETs). We have fabricated multi-CNT-channel CNTFETs with an 80-nm channel length using precise self-assembly methods. We describe compact statistical models and Monte Carlo simulations to analyze failure probability and the variability of the on-state current and threshold voltage. The results show that multichannel CNTFETs are more resilient to process variation and random environmental fluctuations than single-CNT devices.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Fabrication and characterization on reduced graphene oxide field effect transistor (RGOFET) based biosensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rashid, A. Diyana; Ruslinda, A. Rahim, E-mail: ruslinda@unimap.edu.my; Fatin, M. F.

2016-07-06

The fabrication and characterization on reduced graphene oxide field effect transistor (RGO-FET) were demonstrated using a spray deposition method for biological sensing device purpose. A spray method is a fast, low-cost and simple technique to deposit graphene and the most promising technology due to ideal coating on variety of substrates and high production speed. The fabrication method was demonstrated for developing a label free aptamer reduced graphene oxide field effect transistor biosensor. Reduced graphene oxide (RGO) was obtained by heating on hot plate fixed at various temperatures of 100, 200 and 300°C, respectively. The surface morphology of RGO were examinedmore » via atomic force microscopy to observed the temperature effect of produced RGO. The electrical measurement verify the performance of electrical conducting RGO-FET at temperature 300°C is better as compared to other temperature due to the removal of oxygen groups in GO. Thus, reduced graphene oxide was a promising material for biosensor application.« less

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

NASA Astrophysics Data System (ADS)

Mookerjea, Saurabh A.

Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SS<60 mV/dec) transistors are under intense research for its potential to replace the ubiquitous MOSFET. The focus of this dissertation is on the design, fabrication and characterization of band-to-band tunneling field effect transistor (TFET) which belongs to the family of steep slope transistors. TFET with a gate modulated zener tunnel junction at the source allows sub-kT/q (sub-60 mV/dec at room temperature) sub-threshold slope (SS) device operation over a certain gate bias range near the off-state. This allows TFET to achieve much higher I ON-IOFF ratio over a specified gate voltage swing compared to MOSFETs, thus enabling aggressive supply voltage scaling for low power logic operation without impacting its ON-OFF current ratio. This dissertation presents the operating principle of TFET, the material selection strategy and device design for TFET fabrication. This is followed by a novel 6T SRAM design which circumvents the issue of unidirectional conduction in TFET. The switching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

Charge transport in organic multi-layer devices under electric and optical fields

NASA Astrophysics Data System (ADS)

Park, June Hyoung

2007-12-01

Charge transport in small organic molecules and conjugated conducting polymers under electric or optical fields is studied by using field effect transistors and photo-voltaic cells with multiple thin layers. With these devices, current under electric field, photo-current under optical field, and luminescence of optical materials are measured to characterize organic and polymeric materials. For electric transport studies, poly(3,4-ethylenedioxythiophene) doped by polystyrenesulfonic acid is used, which is conductive with conductivity of approximately 25 S/cm. Despite their high conductance, field effect transistors based on the films are successfully built and characterized by monitoring modulations of drain current by gate voltage and IV characteristic curves. Due to very thin insulating layers of poly(vinylphenol), the transistors are relative fast under small gate voltage variation although heavy ions are involved in charge transport. In IV characteristic curves, saturation effects can be observed. Analysis using conventional field effect transistor model indicates high mobility of charge carriers, 10 cm2/V·sec, which is not consistent with the mobility of the conducting polymer. It is proposed that the effect of a small density of ions injected via polymer dielectric upon application of gate voltage and the ion compensation of key hopping sites accounts for the operation of the field effect transistors. For the studies of transport under optical field, photovoltaic cells with 3 different dendrons, which are efficient to harvest photo-excited electrons, are used. These dendrons consist of two electron-donors (tetraphenylporphyrin) and one electron-accepter (naphthalenediimide). Steady-state fluorescence measurements show that inter-molecular interaction is dominant in solid dendron film, although intra-molecular interaction is still present. Intra-molecular interaction is suggested by different fluorescence lifetimes between solutions of donor and dendrons. This intra-molecular interaction has two processes, transport via pi-stackings and transport via linking functional groups in the dendrons. IV characteristic spectra of the photovoltaic cells suggest that the transport route of photo-excited charges depends on wavelength of incident light on the cells. For excitation by the Soret band and the lowest Q band, a photo-excited electron can transport directly to a neighbor dendron. For excitation by high-energy Q bands, a photo-excited electron transports via the electron-accepters.

Synthesis of bilayer MoS2 and corresponding field effect characteristics

NASA Astrophysics Data System (ADS)

Fang, Mingxu; Feng, Yulin; Wang, Fang; Yang, Zhengchun; Zhang, Kailiang

2017-06-01

Two-dimensional transition-metal dichalcogenides such as MoS2 are promising materials for next-generation nano-electronic devices. The physical properties of MoS2 are determined by layer number according to the variation of band-gap. Here, we synthesize large-size bilayer-MoS2 with triangle and hexagonal nanosheets in one step by chemical vapor deposition, Monolayer and bilayer-MoS2 back-gate field effect transistors are also fabricated and the performance including mobility and on/off ratios are compared. The bilayer-MoS2 back-gate field effect transistor shows superior performance with field effect mobility of ∼21.27cm2V-1s-1, and Ion/Ioff ratio of ∼3.9×107.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

PubMed

Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

2007-05-01

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NASA Astrophysics Data System (ADS)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-01

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

PubMed

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-15

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kobayashi, Shigeki; Saitoh, Masumi; Nakabayashi, Yukio; Uchida, Ken

2007-11-01

Uniaxial stress effects on Coulomb-limited mobility (μCoulomb) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated experimentally. By using the four-point bending method, uniaxial stress corresponding to 0.1% strain is applied to MOSFETs along the channel direction. It is found that μCoulomb in p-type MOSFETs is enhanced greatly by uniaxial stress; μCoulomb is as sensitive as phonon-limited mobility. The high sensitivity of μCoulomb in p-type MOSFETs to stress arises from the stress-induced change of hole effective mass.

Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

NASA Astrophysics Data System (ADS)

Zhang, Yuan Yuan; Shi, Yumeng; Chen, Fuming; Mhaisalkar, S. G.; Li, Lain-Jong; Ong, Beng S.; Wu, Yiliang

2007-11-01

A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3‴-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

High-performance carbon nanotube thin-film transistors on flexible paper substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Na; Yun, Ki Nam; Yu, Hyun-Yong

Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10{sup 6} and a field-effect mobility of approximately 3 cm{sup 2}/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.

Scanning gate study of organic thin-film field-effect transistor

NASA Astrophysics Data System (ADS)

Aoki, N.; Sudou, K.; Matsusaki, K.; Okamoto, K.; Ochiai, Y.

2008-03-01

Scanning gate microscopy (SGM) has been applied for a study of organic thin-film field effect transistor (OFET). In contrast to one-dimensional nano-material such a carbon nanonube or nano-structure such a quantum point contact, visualization a transport characteristic of OFET channel is basically rather difficult since the channel width is much larger than the size of the SGM tip. Nevertheless, Schottky barriers are successfully visualized at the boundary between the metal electrodes and the OFET channel at ambient atmosphere.

Integrated materials design of organic semiconductors for field-effect transistors.

PubMed

Mei, Jianguo; Diao, Ying; Appleton, Anthony L; Fang, Lei; Bao, Zhenan

2013-05-08

The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm(2)/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

PubMed

Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

2016-12-01

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge carrier transport in polycrystalline organic thin film based field effect transistors

NASA Astrophysics Data System (ADS)

Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

2016-05-01

The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.

PubMed

Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon

2014-11-12

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene/Guanine Interface - A Proposal for High Mobility, Organic Graphene Field Effect Transistors

DTIC Science & Technology

2015-07-01

AFRL-AFOSR-UK-TR-2015-0034 Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene /Guanine...Interface – A Proposal for High Mobility, Organic Graphene Field Effect Transistors Eva Campo BANGOR UNIVERSITY COLLEGE ROAD BANGOR...April 2015 4. TITLE AND SUBTITLE Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene /Guanine Interface - A

Ion-Sensitive Field-Effect Transistor for Biological Sensing

PubMed Central

Lee, Chang-Soo; Kim, Sang Kyu; Kim, Moonil

2009-01-01

In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main issues, approaches, and challenges, with the aim of stimulating a broader interest in developing ISFET-based biosensors and extending their applications for reliable and sensitive analysis of various biomolecules such as DNA, proteins, enzymes, and cells. PMID:22423205

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

PubMed

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

Dramatic switching behavior in suspended MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Chen, Huawei; Li, Jingyu; Chen, Xiaozhang; Zhang, David; Zhou, Peng

2018-02-01

When integrating MoS2 flakes into scaling-down transistors, the short-channel effect, which is severe in silicon technology below 5-nanometer, can be avoided effectively. MoS2 transistors not only exhibit a high on/off ratio but also demonstrate a rapid switching speed. According to the theoretical calculation, the thermionic limit subthreshold slope (SS) of the ideal device could reach 60 mV/dec. However, due to the confinement of defects from substrates or contamination during the process, the SS deteriorates to more than 300 mV/dec, causing serious power consumption. In this work, we optimize the SS through structure design of MoS2 transistors. The suspended transistors exhibit a high on/off ratio of 107 and a minimum SS of 63 mV/dec with an ultralow standby power at room temperature. This study demonstrates the promising potential of structure design for electronic devices with ultralow-power switching behaviors.

Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

PubMed

Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

2017-01-11

Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

PubMed

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Haas, Simon; Krellner, Cornelius; Mathis, Thomas; Batlogg, Bertram

2010-04-01

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT’s), single crystal field-effect transistors (SC-FET’s) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of “fast” hole traps in TFT’s made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT’s with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

Multifunctional Self-Assembled Monolayers for Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Cernetic, Nathan

Organic field effect transistors (OFETs) have the potential to reach commercialization for a wide variety of applications such as active matrix display circuitry, chemical and biological sensing, radio-frequency identification devices and flexible electronics. In order to be commercially competitive with already at-market amorphous silicon devices, OFETs need to approach similar performance levels. Significant progress has been made in developing high performance organic semiconductors and dielectric materials. Additionally, a common route to improve the performance metric of OFETs is via interface modification at the critical dielectric/semiconductor and electrode/semiconductor interface which often play a significant role in charge transport properties. These metal oxide interfaces are typically modified with rationally designed multifunctional self-assembled monolayers. As means toward improving the performance metrics of OFETs, rationally designed multifunctional self-assembled monolayers are used to explore the relationship between surface energy, SAM order, and SAM dipole on OFET performance. The studies presented within are (1) development of a multifunctional SAM capable of simultaneously modifying dielectric and metal surface while maintaining compatibility with solution processed techniques (2) exploration of the relationship between SAM dipole and anchor group on graphene transistors, and (3) development of self-assembled monolayer field-effect transistor in which the traditional thick organic semiconductor is replaced by a rationally designed self-assembled monolayer semiconductor. The findings presented within represent advancement in the understanding of the influence of self-assembled monolayers on OFETs as well as progress towards rationally designed monolayer transistors.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides.

PubMed

Das, Saptarshi; Prakash, Abhijith; Salazar, Ramon; Appenzeller, Joerg

2014-02-25

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform numerical calculations based on Landauer formalism and WKB approximation to explain our experimental findings. Based on our simple model, we discuss the impact of band gap and effective mass on the band-to-band tunneling current and evaluate the performance limits for a set of dichalcogenides in the context of tunneling transistors for low-power applications. Our findings suggest that WTe2 is an excellent choice for tunneling field-effect transistors.

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Anh Khoa Augustin; IMEC, 75 Kapeldreef, B-3001 Leuven; Pourtois, Geoffrey

2016-01-25

The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, andmore » sets the limit of the scaling in future transistor designs.« less

Solution-Processable Balanced Ambipolar Field-Effect Transistors Based on Carbonyl-Regulated Copolymers.

PubMed

Yang, Chengdong; Fang, Renren; Yang, Xiongfa; Chen, Ru; Gao, Jianhua; Fan, Hanghong; Li, Hongxiang; Hu, Wenping

2018-04-04

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole- and electron-transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron-withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm 2  V -1  s -1 , which suggested that these copolymers are promising ambipolar semiconductor materials. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atom transistor from the point of view of nonequilibrium dynamics

NASA Astrophysics Data System (ADS)

Zhang, Z.; Dunjko, V.; Olshanii, M.

2015-12-01

We analyze the atom field-effect transistor scheme (Stickney et al 2007 Phys. Rev. A 75 013608) using the standard tools of quantum and classical nonequlilibrium dynamics. We first study the correspondence between the quantum and the mean-field descriptions of this system by computing, both ab initio and by using their mean-field analogs, the deviations from the Eigenstate Thermalization Hypothesis, quantum fluctuations, and the density of states. We find that, as far as the quantities that interest us, the mean-field model can serve as a semi-classical emulator of the quantum system. Then, using the mean-field model, we interpret the point of maximal output signal in our transistor as the onset of ergodicity—the point where the system becomes, in principle, able to attain the thermal values of the former integrals of motion, albeit not being fully thermalized yet.

Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Sarkar, K.; Pal, B.; Kumar, Aparabal; Das, Anish; Banerji, P.

2018-05-01

In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers' method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.

Low-frequency (1/f) noise in nanocrystal field-effect transistors.

PubMed

Lai, Yuming; Li, Haipeng; Kim, David K; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2014-09-23

We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation regimes the 1/f noise obeys Hooge's model of mobility fluctuations, consistent with transport of a high density of accumulated carriers in extended electronic states of the NC thin films. In the subthreshold regime, the Fermi energy moves deeper into the mobility gap and sub-band gap trap states give rise to a transition to noise dominated by carrier number fluctuations as described in McWhorter's model. CdSe nanocrystal field-effect transistors have a Hooge parameter of 3 × 10(-2), comparable to other solution-deposited, thin-film devices, promising high-performance, low-cost, low-noise integrated circuitry.

Extended Gate Field-Effect Transistor Biosensors for Point-Of-Care Testing of Uric Acid.

PubMed

Guan, Weihua; Reed, Mark A

2017-01-01

An enzyme-free redox potential sensor using off-chip extended-gate field effect transistor (EGFET) with a ferrocenyl-alkanethiol modified gold electrode has been used to quantify uric acid concentration in human serum and urine. Hexacyanoferrate (II) and (III) ions are used as redox reagent. The potentiometric sensor measures the interface potential on the ferrocene immobilized gold electrode, which is modulated by the redox reaction between uric acid and hexacyanoferrate ions. The device shows a near Nernstian response to uric acid and is highly specific to uric acid in human serum and urine. The interference that comes from glucose, bilirubin, ascorbic acid, and hemoglobin is negligible in the normal concentration range of these interferents. The sensor also exhibits excellent long term reliability and is regenerative. This extended gate field effect transistor based sensor is promising for point-of-care detection of uric acid due to the small size, low cost, and low sample volume consumption.

Integrated digital inverters based on two-dimensional anisotropic ReS₂ field-effect transistors

DOE PAGES

Liu, Erfu; Fu, Yajun; Wang, Yaojia; ...

2015-05-07

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS₂) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS₂ field-effect transistors, which exhibit competitive performance with large current on/off ratios (~10⁷) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconductingmore » materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS₂ anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.« less

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

PubMed

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

PubMed Central

2012-01-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

Large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.

PubMed

Izak, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

2015-05-01

We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring. Copyright © 2015 Elsevier B.V. All rights reserved.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.

PubMed

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L; Banyai, Douglas; Savaikar, Madhusudan A; Jaszczak, John A; Yap, Yoke Khin

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

PubMed

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Static Characteristics of the Ferroelectric Transistor Inverter

NASA Technical Reports Server (NTRS)

Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

Nanomechanical silicon resonators with intrinsic tunable gain and sub-nW power consumption.

PubMed

Bartsch, Sebastian T; Lovera, Andrea; Grogg, Daniel; Ionescu, Adrian M

2012-01-24

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-insulator platform for building NEM oscillators in which fin field effect transistors (FinFETs) are integrated into nanomechanical silicon resonators. We demonstrate transistor amplification and signal mixing, coupled with mechanical motion at very high frequencies (25-80 MHz). By operating the transistor in the subthreshold region, the power consumption of resonators can be reduced to record-low nW levels, opening the way for the parallel operation of hundreds of thousands of NEM oscillators. The electromechanical charge modulation due to the field effect in a resonant transistor body constitutes a scalable nanomechanical motion detection all-on-chip and at room temperature. The new class of tunable NEMS represents a major step toward their integration in resonator arrays for applications in sensing and signal processing. © 2011 American Chemical Society

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

PubMed

Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2017-09-01

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

NASA Astrophysics Data System (ADS)

Oh, Seung Kyu; Cho, Moon Uk; Dallas, James; Jang, Taehoon; Lee, Dong Gyu; Pouladi, Sara; Chen, Jie; Wang, Weijie; Shervin, Shahab; Kim, Hyunsoo; Shin, Seungha; Choi, Sukwon; Kwak, Joon Seop; Ryou, Jae-Hyun

2017-09-01

We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the ID of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at VDS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

NASA Technical Reports Server (NTRS)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Multimode Silicon Nanowire Transistors

PubMed Central

2014-01-01

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 104 is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 107 whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport. PMID:25303290

Effect of multi-dimensional ultraviolet light exposure on the growth of pentacene film and application to organic field-effect transistors.

PubMed

Bae, Jin-Hyuk; Lee, Sin-Doo; Choi, Jong Sun; Park, Jaehoon

2012-05-01

We report on the multi-dimensional alignment of pentacene molecules on a poly(methyl methacrylate)-based photosensitive polymer (PMMA-polymer) and its effect on the electrical performance of the pentacene-based field-effect transistor (FET). Pentacene molecules are shown to be preferentially aligned on the linearly polarized ultraviolet (LPUV)-exposed PMMA-polymer layer, which is contrast to an isotropic alignment on the bare PMMA-polymer layer. Multi-dimensional alignment of pentacene molecules in the film could be achieved by adjusting the direction of LPUV exposed to the PMMA-polymer. The control of pentacene molecular alignment is found to be promising for the field-effect mobility enhancement in the pentacene FET.

A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si.

PubMed

Shin, Kumjae; Lee, Hoontaek; Sung, Min; Lee, Sang Hoon; Shin, Hyunjung; Moon, Wonkyu

2017-10-01

We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor(FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga+ ion beam was prepared. Irradiation and implantation with Ga+ ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity. Copyright © 2017 Elsevier Ltd. All rights reserved.

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Li, Gongtan; Di Pietro, Riccardo; Huang, Jie; Noh, Yong-Young; Liu, Xuying; Minari, Takeo

2017-09-01

Very high values of carrier mobility have been recently reported in newly developed materials for field-effect transistors (FETs) or thin-film transistors (TFTs). However, there is an increasing concern of whether the values are overestimated. In this paper, we investigate how much contact resistance a FET or TFT can tolerate to allow the conventional current-voltage equations, which is derived for no contact resistance. We contend that mobility in transistors with resistive contact can be underestimated with the presence of the injection barrier, whereas mobility in transistors with gated Schottky contact can be overestimated by more than 10 times. The latter phenomenon occurs even in long-channel devices, and it becomes more severe when using low-k dielectrics. This is because the band bending and injection barrier experience a complicated evolution on account of electrostatic doping in the semiconducting layer; thus, they do not follow a capacitance approximation. When the band bending is weak, the accumulation is as weak as that in the subthreshold regime. Accordingly, the carrier concentration nonlinearly increases with the gate field. This mechanism can occur with or without exhibiting the "kink" feature in the transfer curves, which has been suggested as the signature of overestimation. For precision, carrier mobility should be presented against gate voltage and should be examined by other recommended extraction methods.

Carbon nanotube nanoradios: The field emission and transistor configurations

NASA Astrophysics Data System (ADS)

Vincent, Pascal; Ayari, Anthony; Poncharal, Philippe; Barois, Thomas; Perisanu, Sorin; Gouttenoire, V.; Purcell, Stephen T.

2012-06-01

In this article, we explore and compare two distinct configurations of the "nanoradio" concept where individual carbon nanotube resonators are the central electromechanical element permitting signal demodulation. The two configurations of singly-clamped field emitters and doubly-clamped field effect transistors are examined which at first glance are quite different, but in fact involve quite similar physical concepts. Amplitude, frequency and digital demodulation are demonstrated and the analytical formulae describing the demodulation are derived as functions of the system parameters. The crucial role played by the mechanical resonance in demodulation is clearly demonstrated. For the field emission configuration we particularly concentrate on how the demodulation depends on the variation of the field amplification factor during resonance and show that amplitude demodulation results in the best transmitted signal. For the transistor configuration the important aspect is the variation of the nanotube conductance as a function of its distance to the gate. In this case frequency demodulation is much more effective and digital signal processing was achieved. The respective strengths and weaknesses of each configuration are discussed throughout the article.

Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

NASA Astrophysics Data System (ADS)

Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih-Chien; Imae, Toyoko

2007-12-01

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3cm2V-1s-1 at 300K, whose value is twice as high as that (1.4×10-3cm2V-1s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Developing Low-Noise GaAs JFETs For Cryogenic Operation

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.

1995-01-01

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

Solid-state X-band Combiner Study

NASA Technical Reports Server (NTRS)

Pitzalis, O., Jr.; Russell, K. J.

1979-01-01

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

Deformable Organic Nanowire Field-Effect Transistors.

PubMed

Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

2018-02-01

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Xu, Jian; Váró, György

2004-10-01

A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.

Quantum simulation of an ultrathin body field-effect transistor with channel imperfections

NASA Astrophysics Data System (ADS)

Vyurkov, V.; Semenikhin, I.; Filippov, S.; Orlikovsky, A.

2012-04-01

An efficient program for the all-quantum simulation of nanometer field-effect transistors is elaborated. The model is based on the Landauer-Buttiker approach. Our calculation of transmission coefficients employs a transfer-matrix technique involving the arbitrary precision (multiprecision) arithmetic to cope with evanescent modes. Modified in such way, the transfer-matrix technique turns out to be much faster in practical simulations than that of scattering-matrix. Results of the simulation demonstrate the impact of realistic channel imperfections (random charged centers and wall roughness) on transistor characteristics. The Landauer-Buttiker approach is developed to incorporate calculation of the noise at an arbitrary temperature. We also validate the ballistic Landauer-Buttiker approach for the usual situation when heavily doped contacts are indispensably included into the simulation region.

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Current Source Logic Gate

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2017-01-01

A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

Maskless writing of a flexible nanoscale transistor with Au-contacted carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Dockendorf, Cedric P. R.; Poulikakos, Dimos; Hwang, Gilgueng; Nelson, Bradley J.; Grigoropoulos, Costas P.

2007-12-01

A flexible polymer field effect transistor with a nanoscale carbon nanotube channel is conceptualized and realized herein. Carbon nanotubes (CNTs) were dispersed on a polyimide substrate and marked in an scanning electron microscope with focused ion beam such that they could be contacted with gold nanoink. The CNTs were divided into two parts forming the source and drain of the transistor. A micropipette writing method was used to contact the carbon nanotube electrodes with gold nanoink and to deposit the poly(3-hexylthiophene) as an active layer. The mobility of the transistors is of the order of 10-5cm/Vs. After fabrication, the flexible transistors can be peeled off the substrate.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

NASA Astrophysics Data System (ADS)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

NASA Astrophysics Data System (ADS)

Dankert, André; Dash, Saroj

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing. Its fundamental concepts (creation, manipulation and detection of spin polarization) have been demonstrated in semiconductors and spin transistor structures using electrical and optical methods. However, an unsolved challenge is the realization of all-electrical methods to control the spin polarization in a transistor manner at ambient temperatures. Here we combine graphene and molybdenum disulfide (MoS2) in a van der Waals heterostructure to realize a spin field-effect transistor (spin-FET) at room temperature. These two-dimensional crystals offer a unique platform due to their contrasting properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in MoS2. The gate-tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel yields spins to interact with high SOC material and allows us to control the spin polarization and lifetime. This all-electrical spin-FET at room temperature is a substantial step in the field of spintronics and opens a new platform for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

PubMed Central

Lyu, Hongming; Lu, Qi; Liu, Jinbiao; Wu, Xiaoming; Zhang, Jinyu; Li, Junfeng; Niu, Jiebin; Yu, Zhiping; Wu, Huaqiang; Qian, He

2016-01-01

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics. PMID:27775009

Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor

NASA Astrophysics Data System (ADS)

Häusermann, R.; Batlogg, B.

2011-08-01

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric.

Extended Characterization of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and varying device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation load, quiescent point, or input signal on each circuit are discussed. Comparisons between the MFSFET and MOSFET circuit operation and performance are discussed at length as well as applications and advantages for the MFSFETs.

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

PubMed

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2003-05-23

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

A more than six orders of magnitude UV-responsive organic field-effect transistor utilizing a benzothiophene semiconductor and Disperse Red 1 for enhanced charge separation.

PubMed

Smithson, Chad S; Wu, Yiliang; Wigglesworth, Tony; Zhu, Shiping

2015-01-14

A more than six orders of magnitude UV-responsive organic field-effect transistor is developed using a benzothiophene (BTBT) semiconductor and strong donor-acceptor Disperse Red 1 as the traps to enhance charge separation. The device can be returned to its low drain current state by applying a short gate bias, and is completely reversible with excellent stability under ambient conditions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarization dependent photo-induced bias stress effect in organic transistors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly; Choi, Hyun Ho; Najafov, Hikmet; Saranin, Danila; Kharlamov, Nikolai A.; Kuznetzov, Denis V.; Didenko, Sergei I.; Cho, Kilwon; Briseno, Alejandro L.; Rutgers-Misis Collaboration; Ru-P Collaboration; Ru-Um Collaboration; Um-P Collaboration

Photo-induced charge transfer between a semiconductor and a gate insulator that occurs in organic transistors operating under illumination leads to a shift of the onset gate voltage in these devices. Here we report an observation of a polarization dependent photo-induced bias-stress effect in two prototypical single-crystal organic field-effect transistors, based on rubrene and TPBIQ. We find that the rate of the effect is a periodic function of polarization angle of a linearly polarized photoexcitation, with a periodicity of π. The observed phenomenon provides an effective tool for addressing the relationship between molecular packing and parameter drift in organic transistors under illumination. The work was carried out with financial support from the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), by gov. decree 16/03/2013, N 211.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors.

PubMed

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-23

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-01

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

25th anniversary article: key points for high-mobility organic field-effect transistors.

PubMed

Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

2013-11-20

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

PubMed

Fabiano, Simone; Crispin, Xavier; Berggren, Magnus

2014-01-08

The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.

PubMed

Kwon, Jimin; Takeda, Yasunori; Fukuda, Kenjiro; Cho, Kilwon; Tokito, Shizuo; Jung, Sungjune

2016-11-22

In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.

Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors

NASA Astrophysics Data System (ADS)

Cao, Qing; Tersoff, Jerry; Han, Shu-Jen; Penumatcha, Ashish V.

2015-08-01

In field-effect transistors, the inherent randomness of dopants and other charges is a major cause of device-to-device variability. For a quasi-one-dimensional device such as carbon nanotube transistors, even a single charge can drastically change the performance, making this a critical issue for their adoption as a practical technology. Here we calculate the effect of the random charges at the gate-oxide surface in ballistic carbon nanotube transistors, finding good agreement with the variability statistics in recent experiments. A combination of experimental and simulation results further reveals that these random charges are also a major factor limiting the subthreshold swing for nanotube transistors fabricated on thin gate dielectrics. We then establish that the scaling of the nanotube device uniformity with the gate dielectric, fixed-charge density, and device dimension is qualitatively different from conventional silicon transistors, reflecting the very different device physics of a ballistic transistor with a quasi-one-dimensional channel. The combination of gate-oxide scaling and improved control of fixed-charge density should provide the uniformity needed for large-scale integration of such novel one-dimensional transistors even at extremely scaled device dimensions.

THE SILICON OLFACTORY BULB: A NEUROMORPHIC APPROACH TO MOLECULAR SENSING WITH CHEMORECEPTIVE NEURON MOS TRANSISTORS (CNMOS)

EPA Science Inventory

Within the 3 -year effort, we have established several major findings:

• Chemical sensor in fluid environment with inorganic and polymer sensing surfaces (1,5): Conventional metal oxide semiconductor field effect transistor (MOSFET)-based chemical sensing su...

• The Art of Electronics

  NASA Astrophysics Data System (ADS)

  Horowitz, Paul; Hill, Winfield

  2015-04-01

  1. Foundations; 2. Bipolar transistors; 3. Field effect transistors; 4. Operational amplifiers; 5. Precision circuits; 6. Filters; 7. Oscillators and timers; 8. Low noise techniques and transimpedance; 9. Power regulation; 10. Digital electronics; 11. Programmable logic devices; 12. Logical interfacing; 13. Digital meets analog; 14. Computers, controllers, and data links; 15. Microcontrollers.

• Front and backside processed thin film electronic devices

  DOEpatents

  Evans, Paul G [Madison, WI; Lagally, Max G [Madison, WI; Ma, Zhenqiang [Middleton, WI; Yuan, Hao-Chih [Lakewood, CO; Wang, Guogong [Madison, WI; Eriksson, Mark A [Madison, WI

  2012-01-03

  This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

• Biomolecular detection using a metal semiconductor field effect transistor

  NASA Astrophysics Data System (ADS)

  Estephan, Elias; Saab, Marie-Belle; Buzatu, Petre; Aulombard, Roger; Cuisinier, Frédéric J. G.; Gergely, Csilla; Cloitre, Thierry

  2010-04-01

  In this work, our attention was drawn towards developing affinity-based electrical biosensors, using a MESFET (Metal Semiconductor Field Effect Transistor). Semiconductor (SC) surfaces must be prepared before the incubations with biomolecules. The peptides route was adapted to exceed and bypass the limits revealed by other types of surface modification due to the unwanted unspecific interactions. As these peptides reveal specific recognition of materials, then controlled functionalization can be achieved. Peptides were produced by phage display technology using a library of M13 bacteriophage. After several rounds of bio-panning, the phages presenting affinities for GaAs SC were isolated; the DNA of these specific phages were sequenced, and the peptide with the highest affinity was synthesized and biotinylated. To explore the possibility of electrical detection, the MESFET fabricated with the GaAs SC were used to detect the streptavidin via the biotinylated peptide in the presence of the bovine Serum Albumin. After each surface modification step, the IDS (current between the drain and the source) of the transistor was measured and a decrease in the intensity was detected. Furthermore, fluorescent microscopy was used in order to prove the specificity of this peptide and the specific localisation of biomolecules. In conclusion, the feasibility of producing an electrical biosensor using a MESFET has been demonstrated. Controlled placement, specific localization and detection of biomolecules on a MESFET transistor were achieved without covering the drain and the source. This method of functionalization and detection can be of great utility for biosensing application opening a new way for developing bioFETs (Biomolecular Field-Effect Transistor).

• Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

  PubMed

  Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

  2012-01-15

  Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening. Copyright © 2011 Elsevier B.V. All rights reserved.

• Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

  PubMed

  Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

  2010-11-01

  The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

• Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

  NASA Technical Reports Server (NTRS)

  Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

  2016-01-01

  The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

• Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate

  NASA Astrophysics Data System (ADS)

  Hori, Yasuko; Kuzuhara, Masaaki; Ando, Yuji; Mizuta, Masashi

  2000-04-01

  Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal-semiconductor FET with FP (FPFET) (LGF˜0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal-semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance.

• A transistor based on 2D material and silicon junction

  NASA Astrophysics Data System (ADS)

  Kim, Sanghoek; Lee, Seunghyun

  2017-07-01

  A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

• Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

  NASA Technical Reports Server (NTRS)

  Schwarze, G. E.; Frasca, A. J.

  1991-01-01

  Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

• Electroluminescence from single-wall carbon nanotube network transistors.

  PubMed

  Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

  2008-08-01

  The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

• Solution-processed nanoparticle super-float-gated organic field-effect transistor as un-cooled ultraviolet and infrared photon counter.

  PubMed

  Yuan, Yongbo; Dong, Qingfeng; Yang, Bin; Guo, Fawen; Zhang, Qi; Han, Ming; Huang, Jinsong

  2013-01-01

  High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/μm(2)s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

• An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

  PubMed

  Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

  2017-09-22

  We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Exploring the Charge Transport in Conjugated Polymers.

PubMed

Xu, Yong; Sun, Huabin; Li, Wenwu; Lin, Yen-Fu; Balestra, Francis; Ghibaudo, Gerard; Noh, Yong-Young

2017-11-01

Conjugated polymers came to an unprecedented epoch that the charge transport is limited only by small disorder within aggregated domains. Accurate evaluation of transport performance is thus vital to optimizing further molecule design. Yet, the routine method by means of the conventional field-effect transistors may not satisfy such a requirement. Here, it is shown that the extrinsic effects of Schottky barrier, access transport through semiconductor bulk, and concurrent ambipolar conduction seriously influence transport analysis. The planar transistors incorporating ohmic contacts free of access and ambipolar conduction afford an ideal access to charge transport. It is found, however, that only the planar transistors operating in low-field regime are reliable to explore the inherent transport properties due to the energetic disorder lowering by the lateral field induced by high drain voltage. This work opens up a robust approach to comprehend the delicate charge transport in conjugated polymers so as to develop high-performance semiconducting polymers for promising plastic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optomechanical transistor with mechanical gain

NASA Astrophysics Data System (ADS)

Zhang, X. Z.; Tian, Lin; Li, Yong

2018-04-01

We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

PubMed

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell.

PubMed

Toumazou, Christofer; Thay, Tan Sri Lim Kok; Georgiou, Pantelis

2014-03-28

Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

NASA Astrophysics Data System (ADS)

Es-Sakhi, Azzedin D.

Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui

2014-01-01

DC performance of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors (DCFETs) grown on a low-cost GaAs substrate is first demonstrated. In the complementary DCFETs, the n-channel device was fabricated on the InxGa1-xP metamorphic linearly graded buffer layer and the p-channel field-effect transistor was stacked on the top of the n-channel device. Particularly, the saturation voltage of the n-channel device is substantially reduced to decrease the VOL and VIH values attributed that two-dimensional electron gas is formed and could be modulated in the n-InGaAs channel. Experimentally, a maximum extrinsic transconductance of 215 (17) mS/mm and a maximum saturation current density of 43 (-27) mA/mm are obtained in the n-channel (p-channel) device. Furthermore, the noise margins NMH and NML are up to 0.842 and 0.330 V at a supply voltage of 1.5 V in the complementary logic inverter application.

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawanago, Takamasa, E-mail: kawanago.t.ab@m.titech.ac.jp; Oda, Shunri

In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS{sub 2}) field-effect transistors. A simple fabrication process involving the selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS{sub 2} flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS{sub 2}/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS{sub 2}/SAM structure.more » The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS{sub 2} field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.« less

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

DOE Office of Scientific and Technical Information (OSTI.GOV)

Obolenskaya, E. S., E-mail: bess009@mail.ru, E-mail: obolensk@rf.unn.ru; Tarasova, E. A.; Churin, A. Yu.

2016-12-15

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically andmore » experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.« less

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

NASA Astrophysics Data System (ADS)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

PubMed

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

PubMed Central

Liu, Erfu; Fu, Yajun; Wang, Yaojia; Feng, Yanqing; Liu, Huimei; Wan, Xiangang; Zhou, Wei; Wang, Baigeng; Shao, Lubin; Ho, Ching-Hwa; Huang, Ying-Sheng; Cao, Zhengyi; Wang, Laiguo; Li, Aidong; Zeng, Junwen; Song, Fengqi; Wang, Xinran; Shi, Yi; Yuan, Hongtao; Hwang, Harold Y.; Cui, Yi; Miao, Feng; Xing, Dingyu

2015-01-01

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼107) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications. PMID:25947630

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

NASA Astrophysics Data System (ADS)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.; Clark, Timothy

2015-07-01

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.

2015-07-28

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localizemore » charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.« less

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

NASA Astrophysics Data System (ADS)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

Thin-film transistors with a graphene oxide nanocomposite channel.

PubMed

Jilani, S Mahaboob; Gamot, Tanesh D; Banerji, P

2012-12-04

Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism.

Antiferromagnetic Spin Wave Field-Effect Transistor

DOE PAGES

Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; ...

2016-04-06

In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. In conclusion, our findings open up the exciting possibilitymore » of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.« less

Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

NASA Astrophysics Data System (ADS)

Cheng, Yunfei; Wang, Wu

2017-10-01

In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

PubMed Central

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L.; Banyai, Douglas; Savaikar, Madhusudan A.; Jaszczak, John A.; Yap, Yoke Khin

2016-01-01

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending. PMID:26846587

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE PAGES

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; ...

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.

PubMed

Shih, Cheng Wei; Chin, Albert

2016-08-03

At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 × 10(6) and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 °C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.

Theoretical Investigation of Device Aspects of Semiconductor Superlattices.

DTIC Science & Technology

1983-09-01

n-i-p-i devices include bulk field effect transistors, ultrasensitive or ultrafast IR photodetectors , tunable light-emitting devices, and ultrafast...transistor4 ultrasensitive or ultrafast IR photodetectors , tunable light-emitt tg devices, and ultrafast optical modulators. Particularlylppealing...differential conductivity ( NDC ) ......................... 19 3.2.2. Spontaneous and stimulated FIR emission from interlayer transitions

Memristive device based on a depletion-type SONOS field effect transistor

NASA Astrophysics Data System (ADS)

Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

2017-06-01

State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

2008-01-01

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Balanced Ambipolar Organic Field-Effect Transistors by Polymer Preaggregation.

PubMed

Janasz, Lukasz; Luczak, Adam; Marszalek, Tomasz; Dupont, Bertrand G R; Jung, Jaroslaw; Ulanski, Jacek; Pisula, Wojciech

2017-06-21

Ambipolar organic field-effect transistors (OFETs) based on heterojunction active films still suffer from an imbalance in the transport of electrons and holes. This problem is related to an uncontrolled phase separation between the donor and acceptor organic semiconductors in the thin films. In this work, we have developed a concept to improve the phase separation in heterojunction transistors to enhance their ambipolar performance. This concept is based on preaggregation of the donor polymer, in this case poly(3-hexylthiophene) (P3HT), before solution mixing with the small-molecular-weight acceptor, phenyl-C61-butyric acid methyl ester (PCBM). The resulting heterojunction transistor morphology consists of self-assembled P3HT fibers embedded in a PCBM matrix, ensuring balanced mobilities reaching 0.01 cm 2 /V s for both holes and electrons. These are the highest mobility values reported so far for ambipolar OFETs based on P3HT/PCBM blends. Preaggregation of the conjugated polymer before fabricating binary blends can be regarded as a general concept for a wider range of semiconducting systems applicable in organic electronic devices.

Trapping effect of metal nanoparticle mono- and multilayer in the organic field-effect transistor

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Lin, Jack; Taguchi, Dai; Majková, Eva; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-03-01

The effect of silver nanoparticles self-assembled monolayer (Ag NPs SAM) on charge transport in pentacene organic field-effect transistors (OFET) was investigated by both steady-state and transient-state methods, which are current-voltage measurements in steady-state and time-resolved microscopic (TRM) second harmonic generation (SHG) in transient-state, respectively. The analysis of electronic properties revealed that OFET with SAM exhibited significant charge trapping effect due to the space-charge field formed by immobile charges. Lower transient-state mobility was verified by the direct probing of carrier motion by TRM-SHG technique. It was shown that the trapping effect rises together with increase of SAM layers suggesting the presence of traps in the bulk of NP films. The model based on the electrostatic charge barrier is suggested to explain the phenomenon.

N-Channel field-effect transistors with floating gates for extracellular recordings.

PubMed

Meyburg, Sven; Goryll, Michael; Moers, Jürgen; Ingebrandt, Sven; Böcker-Meffert, Simone; Lüth, Hans; Offenhäusser, Andreas

2006-01-15

A field-effect transistor (FET) for recording extracellular signals from electrogenic cells is presented. The so-called floating gate architecture combines a complementary metal oxide semiconductor (CMOS)-type n-channel transistor with an independent sensing area. This concept allows the transistor and sensing area to be optimised separately. The devices are robust and can be reused several times. The noise level of the devices was smaller than of comparable non-metallised gate FETs. In addition to the usual drift of FET devices, we observed a long-term drift that has to be controlled for future long-term measurements. The device performance for extracellular signal recording was tested using embryonic rat cardiac myocytes cultured on fibronectin-coated chips. The extracellular cell signals were recorded before and after the addition of the cardioactive isoproterenol. The signal shapes of the measured action potentials were comparable to the non-metallised gate FETs previously used in similar experiments. The fabrication of the devices involved the process steps of standard CMOS that were necessary to create n-channel transistors. The implementation of a complete CMOS process would facilitate the integration of the logical circuits necessary for signal pre-processing on a chip, which is a prerequisite for a greater number of sensor spots in future layouts.

Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN

NASA Astrophysics Data System (ADS)

San Yip, Pak; Zou, Xinbo; Cho, Wai Ching; Wu, Kam Lam; Lau, Kei May

2017-07-01

We report growth, fabrication, and device results of MoS2-based transistors and diodes implemented on a single 2D/3D material platform. The 2D/3D platform consists of a large-area MoS2 thin film grown on SiO2/p-GaN substrates. Atomic force microscopy, scanning electron microscopy, and Raman spectroscopy were used to characterize the thickness and quality of the as-grown MoS2 film, showing that the large-area MoS2 nanosheet has a smooth surface morphology constituted by small grains. Starting from the same material, both top-gated MoS2 field effect transistors and MoS2/SiO2/p-GaN heterojunction diodes were fabricated. The transistors exhibited a high on/off ratio of 105, a subthreshold swing of 74 mV dec-1, field effect mobility of 0.17 cm2 V-1 s-1, and distinctive current saturation characteristics. For the heterojunction diodes, current-rectifying characteristics were demonstrated with on-state current density of 29 A cm-2 and a current blocking property up to -25 V without breakdown. The reported transistors and diodes enabled by the same 2D/3D material stack present promising building blocks for constructing future nanoscale electronics.

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Okojie, Robert S.; Beheim, Glenn M.; Meredith, Roger; Ferrier, Terry

2006-01-01

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooth, Alexander, E-mail: a.pooth@bristol.ac.uk; IQE; Uren, Michael J.

2015-12-07

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Ma, Nan; Jena, Debdeep

2015-03-01

In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

An underlap field-effect transistor for electrical detection of influenza

NASA Astrophysics Data System (ADS)

Lee, Kwang-Won; Choi, Sung-Jin; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2010-01-01

An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and avian influenza antibody (anti-AI) were designed as a receptor molecule and a target material, respectively. The drain current was significantly decreased after the binding of negatively charged anti-AI on the underlap channel. A set of control experiments supports that only the biomolecules on the underlap channel effectively modulate the drain current. With the merits of a simple fabrication process, complementary metal-oxide-semiconductor compatibility, and enhanced sensitivity, the underlap FET could be a promising candidate for a chip-based biosensor.

Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

NASA Astrophysics Data System (ADS)

She, Xiao-Jian; Liu, Jie; Zhang, Jing-Yu; Gao, Xu; Wang, Sui-Dong

2013-09-01

Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

NASA Astrophysics Data System (ADS)

Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

2018-05-01

We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Error correcting circuit design with carbon nanotube field effect transistors

NASA Astrophysics Data System (ADS)

Liu, Xiaoqiang; Cai, Li; Yang, Xiaokuo; Liu, Baojun; Liu, Zhongyong

2018-03-01

In this work, a parallel error correcting circuit based on (7, 4) Hamming code is designed and implemented with carbon nanotube field effect transistors, and its function is validated by simulation in HSpice with the Stanford model. A grouping method which is able to correct multiple bit errors in 16-bit and 32-bit application is proposed, and its error correction capability is analyzed. Performance of circuits implemented with CNTFETs and traditional MOSFETs respectively is also compared, and the former shows a 34.4% decrement of layout area and a 56.9% decrement of power consumption.

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

PubMed

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extended-gate organic field-effect transistor for the detection of histamine in water

NASA Astrophysics Data System (ADS)

Minamiki, Tsukuru; Minami, Tsuyoshi; Yokoyama, Daisuke; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

2015-04-01

As part of our ongoing research program to develop health care sensors based on organic field-effect transistor (OFET) devices, we have attempted to detect histamine using an extended-gate OFET. Histamine is found in spoiled or decayed fish, and causes foodborne illness known as scombroid food poisoning. The new OFET device possesses an extended gate functionalized by carboxyalkanethiol that can interact with histamine. As a result, we have succeeded in detecting histamine in water through a shift in OFET threshold voltage. This result indicates the potential utility of the designed OFET devices in food freshness sensing.

Fabricating photoswitches and field-effect transistors from self-assembled tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanines nanowires.

PubMed

Cheng, Chuanwei; Gao, Junshan; Xu, Guoyue; Zhang, Haiqian; Li, Yingying; Luo, Yan

2009-05-01

Tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanine (CuPc) nanowires synthesized by a facile, low temperature self-assembled route, were incorporated into nano-devices: photoswitch and organic field-effect transistor. The devices were capable of switching on/off reversibly and fast by turning the 808 nm infrared light on/off. And the carrier mobility micro of CuPc nanowires incorporated in the devices was -0.02 cm2/V x s. The prelimenary results in this study show the potential application of metal phthalocyanine nanowires in low-cost fabrication of nano photo-electric devices.

Field effect transistor and method of construction thereof

NASA Technical Reports Server (NTRS)

Fletner, W. R. (Inventor)

1978-01-01

A field effect transistor is constructed by placing a semi-conductor layer on an insulating substrate so that the gate region is separated from source and drain regions. The gate electrode and gate region of the layer are of generally reduced length, the gate region being of greatest length on its surface closest to the gate electrode. This is accomplished by initially creating a relatively large gate region of one polarity, and then reversing the polarity of a central portion of this gate region by ion bombardment, thus achieving a narrower final gate region of the stated configuration.

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Outlook and emerging semiconducting materials for ambipolar transistors.

PubMed

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

NASA Astrophysics Data System (ADS)

Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

2009-03-01

In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results obtained using the proposed analytical scheme has been compared with simulated and experimental results, to prove the validity of our model.

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization.

PubMed

Tran, Duy Phu; Pham, Thuy Thi Thanh; Wolfrum, Bernhard; Offenhäusser, Andreas; Thierry, Benjamin

2018-05-11

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

NASA Astrophysics Data System (ADS)

Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng

2015-01-01

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm2/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Back bias induced dynamic and steep subthreshold swing in junctionless transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parihar, Mukta Singh; Kranti, Abhinav, E-mail: akranti@iiti.ac.in

In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change inmore » drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.« less

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

2015-04-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

Rapid evolution of analog circuits configured on a field programmable transistor array

NASA Technical Reports Server (NTRS)

Stoica, A.; Ferguson, M. I.; Zebulum, R. S.; Keymeulen, D.; Duong, V.; Daud, T.

2002-01-01

The purpose of this paper is to illustrate evolution of analog circuits on a stand-alone board-level evolvable system (SABLES). SABLES is part of an effort to achieve integrated evolvable systems. SABLES provides autonomous, fast (tens to hundreds of seconds), on-chip circuit evolution involving about 100,000 circuit evaluations. Its main components are a JPL Field Programmable Transistor Array (FPTA) chip used as transistor-level reconfigurable hardware, and a TI DSP that implements the evolutionary algorithm controlling the FPTA reconfiguration. The paper details an example of evolution on SABLES and points out to certain transient and memory effects that affect the stability of solutions obtained reusing the same piece of hardware for rapid testing of individuals during evolution.

Organic Field Effect Transistors for Large Format Electronics

DTIC Science & Technology

2003-06-19

calculated output characteristics for a p-channel substrate insulator Organic layer Source Drain Gate 6 pentacene OFET with 2µm source to drain spacing...conventional transistors. Figure 3. Calculated output characteristics of a pentacene OFET with image charge induced contact barrier...Cross section view of a part of an OFET in the vicinity of a source or drain contact. local ordering due to surface energy effects. The development of

Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods

NASA Astrophysics Data System (ADS)

Schießl, Stefan P.; Rother, Marcel; Lüttgens, Jan; Zaumseil, Jana

2017-11-01

The field-effect mobility is an important figure of merit for semiconductors such as random networks of single-walled carbon nanotubes (SWNTs). However, owing to their network properties and quantum capacitance, the standard models for field-effect transistors cannot be applied without modifications. Several different methods are used to determine the mobility with often very different results. We fabricated and characterized field-effect transistors with different polymer-sorted, semiconducting SWNT network densities ranging from low (≈6 μm-1) to densely packed quasi-monolayers (≈26 μm-1) with a maximum on-conductance of 0.24 μS μm-1 and compared four different techniques to evaluate the field-effect mobility. We demonstrate the limits and requirements for each method with regard to device layout and carrier accumulation. We find that techniques that take into account the measured capacitance on the active device give the most reliable mobility values. Finally, we compare our experimental results to a random-resistor-network model.

Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis.

PubMed

Zhang, Yanjun; Clausmeyer, Jan; Babakinejad, Babak; Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V; Korchev, Yuri

2016-03-22

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements.

Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis

PubMed Central

Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R. Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V.; Korchev, Yuri

2016-01-01

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements. PMID:26816294

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors.

PubMed

Chen, Hu; Hurhangee, Michael; Nikolka, Mark; Zhang, Weimin; Kirkus, Mindaugas; Neophytou, Marios; Cryer, Samuel J; Harkin, David; Hayoz, Pascal; Abdi-Jalebi, Mojtaba; McNeill, Christopher R; Sirringhaus, Henning; McCulloch, Iain

2017-09-01

The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm 2 V -1 s -1 in bottom-gate top-contact organic field-effect transistors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Soft-type trap-induced degradation of MoS2 field effect transistors.

PubMed

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS 2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS 2 FETs.

Soft-type trap-induced degradation of MoS2 field effect transistors

NASA Astrophysics Data System (ADS)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Removing the current-limit of vertical organic field effect transistors

NASA Astrophysics Data System (ADS)

Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

2017-11-01

The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

PubMed Central

Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Zhang, Xueao

2017-01-01

We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. PMID:28937619

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

2018-06-01

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm-2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V.s at 40 K and 123 cm2/V.s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of -7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

NASA Astrophysics Data System (ADS)

Yan, Shi-Li; Xie, Zhi-Jian; Chen, Jian-Hao; Taniguchi, Takashi; Watanabe, Kenji

2017-03-01

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

Unstable Resonator Mid-Infrared Laser Sources

DTIC Science & Technology

2016-02-26

of individual materials depending on metal species and growth temperatures . Fig. 8 (a) Average power consumption and (b) delay of C2MOS and double...feedback lasers, chirped gratings, interferometric lithography, nanowire transistors, tunnel field- effect transistors, nanoscale epitaxial growth, nanowire...technical approaches. Approaches to wavelength tuning include thermal/operation temperature tuning [1], variable cavity length with cantilever/piezo

On-chip electrical detection of parallel loop-mediated isothermal amplification with DG-BioFETs for the detection of foodborne bacterial pathogens

USDA-ARS?s Scientific Manuscript database

The use of field effect transistors (FETs) as the transduction element for the detection of DNA amplification reactions will enable portable and inexpensive nucleic acid analysis. Transistors used as biological sensors,or BioFETs, minimize the cost and size of detection platforms by leveraging fabri...

International Conference on Conducting Materials (ICoCom2010) Held in Sousse, Tunisia on November 3-7, 2010

DTIC Science & Technology

2010-11-01

Microscopy measurements on operating Pentacene Thin Film Transistor Rossi (Brazil) Organic Vertical Field Effect Transistor using DPIF as organic...Conductors and Related Quantum Matter Oral Session OSC7 12:00-12:20 12:20-12:40 Zulkifli (Malaysia) In-situ imaging of Structural Inhomogeneity and Local Jc

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Shimazu, Yoshihiro; Tashiro, Mitsuki; Sonobe, Satoshi; Takahashi, Masaki

2016-07-01

Molybdenum disulfide (MoS2) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS2-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS2 field-effect transistors. Comparisons between different gases (oxygen, nitrogen, and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.

Investigation of Corner Effect and Identification of Tunneling Regimes in L-Shaped Tunnel Field-Effect-Transistor.

PubMed

Najam, Faraz; Yu, Yun Seop

2018-09-01

Corner-effect existing in L-shaped tunnel field-effect-transistor (LTFET) was investigated using numerical simulations and band diagram analysis. It was found that the corner-effect is caused by the convergence of electric field in the sharp source corner present in an LTFET, thereby increasing the electric field in the sharp source corner region. It was found that in the corner-effect region tunneling starts early, as a function of applied bias, as compared to the rest of the channel not affected by corner-effect. Further, different tunneling regimes as a function of applied bias were identified in the LTFET including source to channel and channel to channel tunneling regimes. Presence of different tunneling regimes in LTFET was analytically justified with a set of equations developed to model source to channel, and channel to channel tunneling currents. Drain-current-gate-voltage (Ids-Vgs) characteristics obtained from the equations is in reasonable qualitative agreement with numerical simulation.

Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1

NASA Astrophysics Data System (ADS)

Hamadani, B. H.; Gundlach, D. J.; McCulloch, I.; Heeney, M.

2007-12-01

We report on charge transport in organic field-effect transistors based on poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1cm2V-1s-1. This is achieved by employing Pt instead of the commonly used Au as the contacting electrode and allows for a significant reduction in the metal/polymer contact resistance. The mobility increases as a function of decreasing channel length, consistent with a Poole-Frenkel model of charge transport, and reaches record mobilities of 1cm2V-1s-1 or more at channel lengths on the order of few microns in an undoped solution-processed polymer cast on an oxide gate dielectric.

Producing smart sensing films by means of organic field effect transistors.

PubMed

Manunza, Ileana; Orgiu, Emanuele; Caboni, Alessandra; Barbaro, Massimo; Bonfiglio, Annalisa

2006-01-01

We have fabricated the first example of totally flexible field effect device for chemical detection based on an organic field effect transistor (OFET) made by pentacene films grown on flexible plastic structures. The ion sensitivity is achieved by employing a thin Mylar foil as gate dielectric. A sensitivity of the device to the pH of the electrolyte solution has been observed A similar structure can be used also for detecting mechanical deformations on flexible surfaces. Thanks to the flexibility of the substrate and the low cost of the employed technology, these devices open the way for the production of flexible chemical and strain gauge sensors that can be employed in a variety of innovative applications such as wearable electronics, e-textiles, new man-machine interfaces.

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

PubMed Central

Giubileo, Filippo; Di Bartolomeo, Antonio; Martucciello, Nadia; Romeo, Francesco; Iemmo, Laura; Romano, Paola; Passacantando, Maurizio

2016-01-01

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO2, obtaining specific contact resistivity ρc≈19 kΩ·µm2 and carrier mobility as high as 4000 cm2·V−1·s−1. By using a highly doped p-Si/SiO2 substrate as the back gate, we analyzed the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate herein that low energy irradiation is detrimental to the transistor current capability, resulting in an increase in contact resistance and a reduction in carrier mobility, even at electron doses as low as 30 e−/nm2. We also show that irradiated devices recover their pristine state after few repeated electrical measurements. PMID:28335335

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum.

PubMed

Chu, Chia-Ho; Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Chen, Chih-Chen; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

2017-07-12

In this study, a new type of field-effect transistor (FET)-based biosensor is demonstrated to be able to overcome the problem of severe charge-screening effect caused by high ionic strength in solution and detect proteins in physiological environment. Antibody or aptamer-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) are used to directly detect proteins, including HIV-1 RT, CEA, NT-proBNP and CRP, in 1X PBS (with 1%BSA) or human sera. The samples do not need any dilution or washing process to reduce the ionic strength. The sensor shows high sensitivity and the detection takes only 5 minutes. The designs of the sensor, the methodology of the measurement, and the working mechanism of the sensor are discussed and investigated. A theoretical model is proposed based on the finding of the experiments. This sensor is promising for point-of-care, home healthcare, and mobile diagnostic device.

Electrostatic melting in a single-molecule field-effect transistor with applications in genomic identification

PubMed Central

Vernick, Sefi; Trocchia, Scott M.; Warren, Steven B.; Young, Erik F.; Bouilly, Delphine; Gonzalez, Ruben L.; Nuckolls, Colin; Shepard, Kenneth L.

2017-01-01

The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. Such devices are effective for characterizing DNA hybridization kinetics and thermodynamics and enabling emerging applications in genomic identification. In this work, we show that hybridization kinetics can be directly controlled by electrostatic bias applied between the device and the surrounding electrolyte. We perform the first single-molecule experiments demonstrating the use of electrostatics to control molecular binding. Using bias as a proxy for temperature, we demonstrate the feasibility of detecting various concentrations of 20-nt target sequences from the Ebolavirus nucleoprotein gene in a constant-temperature environment. PMID:28516911

The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

G4-FETs as Universal and Programmable Logic Gates

NASA Technical Reports Server (NTRS)

Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

2007-01-01

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

PubMed

Dey, Anil W; Svensson, Johannes; Ek, Martin; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

2013-01-01

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak current, Jpeak = 2310 kA/cm(2), than the maximum peak current of axial GaSb/InAs(Sb) Esaki diodes per unit chip area. The radial TFETs also deliver high peak current densities Jpeak = 1210 kA/cm(2), while their axial counterparts at most carry Jpeak = 77 kA/cm(2), normalized to the largest cross-sectional area of the nanowire.

Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ning; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Hui Liu, Yang

2015-02-16

The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors.

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhao, Jingtao; Zhao, Zhenguo; Chen, Zidong; Lin, Zhaojun; Xu, Fukai

2017-12-01

In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is found that the two-dimensional electron gas (2DEG) density under the central gate cannot be changed by the floating gate structures. However, the floating gate structures can cause the strain variation in the barrier layer, which lead to the non-uniform distribution of the polarization charges, then induce a polarization Coulomb field and scatter the 2DEG. More floating gate structures and closer distance between the floating gates and the central gate will result in stronger scattering effect of the 2DEG.

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Matulionis, Arvydas

2013-07-01

The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation-dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested.

Traps and Interface Fixed Charge Effects on a Solution-Processed n-Type Polymeric-Based Organic Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Hafsi, B.; Boubaker, A.; Guerin, D.; Lenfant, S.; Kalboussi, A.; Lmimouni, K.

2017-02-01

Organic field-effect transistors based on poly{[ N, N0- bis(2-octyldodecyl)- naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,50-(2,20-bithiophene)}, [P(NDI2OD-T2)n], were fabricated and characterized. The effect of octadecyltrichlorosilane (OTS) a self-assembled monolayer (SAM) grafted on to a SiO2 gate dielectric was investigated. A significant improvement of the charge mobility ( μ), up to 0.22 cm2/V s, was reached thanks to the OTS treatment. Modifying some technological parameters relating to fabrication, such as solvents, was also studied. We have analyzed the electrical properties of these thin-film transistors by using a two-dimensional drift-diffusion simulator, Integrated System Engineering-Technology Computer Aided Design (ISE-TCAD®). We studied the fixed surface charges at the organic semiconductor/oxide interface and the bulk traps effect. The dependence of the threshold voltage on the density and energy level of the trap states has also been considered. We finally found a good agreement between the output and transfer characteristics for experimental and simulated data.

Switching Characteristics of Ferroelectric Transistor Inverters

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Johnson, R. Wayne; Askew, Ray; Bromstead, James; Weir, Bennett

1991-01-01

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices

PubMed Central

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

PubMed

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

General strategy for biodetection in high ionic strength solutions using transistor-based nanoelectronic sensors.

PubMed

Gao, Ning; Zhou, Wei; Jiang, Xiaocheng; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

2015-03-11

Transistor-based nanoelectronic sensors are capable of label-free real-time chemical and biological detection with high sensitivity and spatial resolution, although the short Debye screening length in high ionic strength solutions has made difficult applications relevant to physiological conditions. Here, we describe a new and general strategy to overcome this challenge for field-effect transistor (FET) sensors that involves incorporating a porous and biomolecule permeable polymer layer on the FET sensor. This polymer layer increases the effective screening length in the region immediately adjacent to the device surface and thereby enables detection of biomolecules in high ionic strength solutions in real-time. Studies of silicon nanowire field-effect transistors with additional polyethylene glycol (PEG) modification show that prostate specific antigen (PSA) can be readily detected in solutions with phosphate buffer (PB) concentrations as high as 150 mM, while similar devices without PEG modification only exhibit detectable signals for concentrations ≤10 mM. Concentration-dependent measurements exhibited real-time detection of PSA with a sensitivity of at least 10 nM in 100 mM PB with linear response up to the highest (1000 nM) PSA concentrations tested. The current work represents an important step toward general application of transistor-based nanoelectronic detectors for biochemical sensing in physiological environments and is expected to open up exciting opportunities for in vitro and in vivo biological sensing relevant to basic biology research through medicine.

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

NASA Astrophysics Data System (ADS)

Padilla, J. L.; Medina-Bailon, C.; Alper, C.; Gamiz, F.; Ionescu, A. M.

2018-04-01

Electron-Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band tunneling processes between two layers of opposite charge carriers where tunneling directions and gate-induced electric fields are mostly aligned (so-called line tunneling). However, the presence of intense electric fields associated with the band bending required to trigger interband tunneling, along with strong confinement effects, has made these types of devices to be regarded as theoretically appealing but technologically impracticable. In this work, we propose an InAs/GaSb heterostructure configuration that, although challenging in terms of process flow design and fabrication, could be envisaged for alleviating the electric fields inside the channel, whereas, at the same time, making quantum confinement become the mechanism that closes the broken gap allowing the device to switch between OFF and ON states. The utilization of induced doping prevents the harmful effect of band tails on the device performance. Simulation results lead to extremely steep slope characteristics endorsing its potential interest for ultralow power applications.

Silicon nanowire biologically sensitive field effect transistors: electrical characteristics and applications.

PubMed

Rim, Taiuk; Baek, Chang-Ki; Kim, Kihyun; Jeong, Yoon-Ha; Lee, Jeong-Soo; Meyyappan, M

2014-01-01

The interest in biologically sensitive field effect transistors (BioFETs) is growing explosively due to their potential as biosensors in biomedical, environmental monitoring and security applications. Recently, adoption of silicon nanowires in BioFETs has enabled enhancement of sensitivity, device miniaturization, decreasing power consumption and emerging applications such as the 3D cell probe. In this review, we describe the device physics and operation of the silicon nanowire BioFETs along with recent advances in the field. The silicon nanowire BioFETs are basically the same as the conventional field-effect transistors (FETs) with the exceptions of nanowire channel instead of thin film and a liquid gate instead of the conventional gate. Therefore, the silicon device physics is important to understand the operation of the BioFETs. Herein, physical characteristics of the silicon nanowire FETs are described and the operational principles of the BioFETs are classified according to the number of gates and the analysis domain of the measured signal. Even the bottom-up process has merits on low-cost fabrication; the top-down process technique is highlighted here due to its reliability and reproducibility. Finally, recent advances in the silicon nanowire BioFETs in the literature are described and key features for commercialization are discussed.

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

PubMed

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

2018-01-01

A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

1991-01-01

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase

NASA Astrophysics Data System (ADS)

Asai, Hidehiro; Mori, Takahiro; Matsukawa, Takashi; Hattori, Junichi; Endo, Kazuhiko; Fukuda, Koichi

2018-04-01

The effect of a drain offset structure on the operation speed of a tunnel field-effect transistor (TFET) ring oscillator is investigated by technology computer-aided design (TCAD) simulation. We demonstrate that the reduction of gate-drain capacitance by the drain offset structure dramatically increases the operation speed of the ring oscillators. Interestingly, we find that this capacitance benefit to operation speed is enhanced by the increase in band-to-band tunneling probability. The “synergistic” speed enhancement by the drain offset structure and the tunneling rate increase will have promising application to the significant improvement of the operation speed of TFET circuits.

Single ZnO nanowire-PZT optothermal field effect transistors.

PubMed

Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

2012-09-07

A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

Polycrystalline silicon ion sensitive field effect transistors

NASA Astrophysics Data System (ADS)

Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

2005-01-01

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

PubMed Central

Wolfrum, Bernhard; Thierry, Benjamin

2018-01-01

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs’ promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology. PMID:29751688

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Zhao, Jingtao; Yang, Ming; Shi, Wenjing; Lv, Yuanjie; Feng, Zhihong

2016-04-01

The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.

Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods.

PubMed

Natali, Dario; Caironi, Mario

2012-03-15

A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Molecular transistors based on BDT-type molecular bridges.

PubMed

Wheeler, W D; Dahnovsky, Yu

2008-10-21

In this work we study the effect of electron correlations in molecular transistors with molecular bridges based on 1,4-benzene-dithiol (BDT) and 2-nitro-1,4-benzene-dithiol (nitro-BDT) by using ab initio electron propagator calculations. We find that there is no gate field effect for the BDT based transistor in accordance with the experimental data. After verifying the computational method on the BDT molecule, we consider a transistor with a nitro-BDT molecular bridge. From the electron propagator calculations, we predict strong negative differential resistance at small positive and negative values of source-drain voltages. The explanation of the peak and the minimum in the current is given in terms of the molecular orbital picture and switch-on (-off) properties due to the voltage dependencies of the Dyson poles (ionization potentials). When the current is off, the electronic states on both electrodes are populated resulting in the vanishing tunneling probability due to the Pauli principle. Besides the minimum and the maximum in the I-V characteristics, we find a strong gate field effect in the conductance where the peak at V(sd) = 0.15 eV and E(g) = 4x10(-3) a.u. switches to the minimum at E(g) = -4x10(-3) a.u. A similar behavior is discovered at the negative V(sd). Such a feature can be used for fast current modulation by changing the polarity of a gate field.

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

NASA Technical Reports Server (NTRS)

Shanley, J. F.; Paulauskas, W. A.; Taylor, D. R.

1982-01-01

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Fault-tolerant power distribution system

NASA Technical Reports Server (NTRS)

Volp, Jeffrey A. (Inventor)

1987-01-01

A fault-tolerant power distribution system which includes a plurality of power sources and a plurality of nodes responsive thereto for supplying power to one or more loads associated with each node. Each node includes a plurality of switching circuits, each of which preferably uses a power field effect transistor which provides a diode operation when power is first applied to the nodes and which thereafter provides bi-directional current flow through the switching circuit in a manner such that a low voltage drop is produced in each direction. Each switching circuit includes circuitry for disabling the power field effect transistor when the current in the switching circuit exceeds a preselected value.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

Synthesis of diketopyrrolopyrrole-based polymers with polydimethylsiloxane side chains and their application in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Ohnishi, Inori; Hashimoto, Kazuhito; Tajima, Keisuke

2018-03-01

Linear polydimethylsiloxane (PDMS) was investigated as a solubilizing group for π-conjugated polymers with the aim of combining high solubility in organic solvents with the molecular packing in solid films that is advantageous for charge transport. Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d-spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.

Protein Viability on Au Nanoparticles during an Electrospray and Electrostatic-Force-Directed Assembly Process

DOE PAGES

Mao, Shun; Lu, Ganhua; Yu, Kehan; ...

2010-01-01

We study the protein viability on Au nanoparticles during an electrospray and electrostatic-force-directed assembly process, through which Au nanoparticle-antibody conjugates are assembled onto the surface of carbon nanotubes (CNTs) to fabricate carbon nanotube field-effect transistor (CNTFET) biosensors. Enzyme-linked immunosorbent assay (ELISA) and field-effect transistor (FET) measurements have been used to investigate the antibody activity after the nanoparticle assembly. Upon the introduction of matching antigens, the colored reaction from the ELISA and the change in the electrical characteristic of the CNTFET device confirm that the antibody activity is preserved during the assembly process.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Angular-Shaped Naphthalene Bis(1,5-diamide-2,6-diylidene)malononitrile for High-Performance, Air-Stable N-Type Organic Field-Effect Transistors.

PubMed

Dhondge, Attrimuni P; Tsai, Pei-Chung; Nien, Chiao-Yun; Xu, Wei-Yu; Chen, Po-Ming; Hsu, Yu-Hung; Li, Kan-Wei; Yen, Feng-Ming; Tseng, Shin-Lun; Chang, Yu-Chang; Chen, Henry J H; Kuo, Ming-Yu

2018-05-04

The synthesis, characterization, and application of two angular-shaped naphthalene bis(1,5-diamide-2,6-diylidene)malononitriles (NBAMs) as high-performance air-stable n-type organic field effect transistor (OFET) materials are reported. NBAM derivatives exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, suitable for air-stable n-type OFETs. The OFET device based on NBAM-EH fabricated by vapor deposition exhibits a maximum electron mobility of 0.63 cm 2 V -1 s -1 in air with an on/off current ratio ( I on / I off ) of 10 5 .

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

PubMed

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.; Rabin, Douglas M. (Technical Monitor)

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

PubMed

Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

2016-07-01

We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. © The Author(s) 2016.

Influence of thermocleavable functionality on organic field-effect transistor performance of small molecules

NASA Astrophysics Data System (ADS)

Mahale, Rajashree Y.; Dharmapurikar, Satej S.; Chini, Mrinmoy Kumar; Venugopalan, Vijay

2017-06-01

Diketopyrrolopyrrole based donor-acceptor-donor conjugated small molecules using ethylene dioxythiophene as a donor was synthesized. Electron deficient diketopyrrolopyrrole unit was substituted with thermocleavable (tert-butyl acetate) side chains. The thermal treatment of the molecules at 160 °C eliminated the tert-butyl ester group results in the formation of corresponding acid. Optical and theoretical studies revealed that the molecules adopted a change in molecular arrangement after thermolysis. The conjugated small molecules possessed p-channel charge transport characteristics in organic field effect transistors. The charge carrier mobility was increased after thermolysis of tert-butyl ester group to 5.07 × 10-5 cm2/V s.

Rylene and related diimides for organic electronics.

PubMed

Zhan, Xiaowei; Facchetti, Antonio; Barlow, Stephen; Marks, Tobin J; Ratner, Mark A; Wasielewski, Michael R; Marder, Seth R

2011-01-11

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.

A pH sensor with a double-gate silicon nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

2013-02-01

A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

Structured-gate organic field-effect transistors

NASA Astrophysics Data System (ADS)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Detection of the Odor Signature of Ovarian Cancer using DNA-Decorated Carbon Nanotube Field Effect Transistor Arrays

NASA Astrophysics Data System (ADS)

Kehayias, Christopher; Kybert, Nicholas; Yodh, Jeremy; Johnson, A. T. Charlie

Carbon nanotubes are low-dimensional materials that exhibit remarkable chemical and bio-sensing properties and have excellent compatibility with electronic systems. Here, we present a study that uses an electronic olfaction system based on a large array of DNA-carbon nanotube field effect transistors vapor sensors to analyze the VOCs of blood plasma samples collected from patients with malignant ovarian cancer, patients with benign ovarian lesions, and age-matched healthy subjects. Initial investigations involved coating each CNT sensor with single-stranded DNA of a particular base sequence. 10 distinct DNA oligomers were used to functionalize the carbon nanotube field effect transistors, providing a 10-dimensional sensor array output response. Upon performing a statistical analysis of the 10-dimensional sensor array responses, we showed that blood samples from patients with malignant cancer can be reliably differentiated from those of healthy control subjects with a p-value of 3 x 10-5. The results provide preliminary evidence that the blood of ovarian cancer patients contains a discernable volatile chemical signature that can be detected using DNA-CNT nanoelectronic vapor sensors, a first step towards a minimally invasive electronic diagnostic technology for ovarian cancer.

Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors

NASA Astrophysics Data System (ADS)

Yin, Lei; Wang, Zhenxing; Wang, Feng; Xu, Kai; Cheng, Ruiqing; Wen, Yao; Li, Jie; He, Jun

2017-03-01

For multifarious electronic and optoelectronic applications, it is indispensable exploration of stable and simple method to modulate electrical behavior of transition metal dichalcogenides (TMDs). In this study, an effective method to adjust the electrical properties of ambipolar TMDs is developed by introducing the dipole electric field from poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer. The transition from ambipolar to p-type conductive characteristics is realized, and the transistor performances are also significantly enhanced. Hole density of MoTe2- and WSe2-based back-gate field effect transistors increases by 4.4 and 2.5 times. Moreover, the corresponding hole mobilities are strikingly improved from 0.27 to 10.7 cm2 V-1 s-1 and from 1.6 to 59.8 cm2 V-1 s-1, respectively. After optimizing, p-channel MoTe2 phototransistors present ultrahigh responsivity of 3521 A/W, which is superior to most layered phototransistors. The remarkable control of conductive type, carrier concentration, and field-effect mobility of ambipolar TMDs via P(VDF-TrFE) treatment paves a way for realization of high-performance and versatile electronic and optoelectronic devices.

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N ,N'-bis(heptafluorobutyl)-3,4:9,10-perylene diimide

NASA Astrophysics Data System (ADS)

Oh, Joon Hak; Liu, Shuhong; Bao, Zhenan; Schmidt, Rüdiger; Würthner, Frank

2007-11-01

The thin-film transistor characteristics of n-channel organic semiconductor, N ,N'-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72cm2V-1s-1. The mobility only slightly decreased after exposure to air and remained stable for more than 50days. Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability.

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

2018-01-01

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

Effects of drain bias on the statistical variation of double-gate tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Choi, Woo Young

2017-04-01

The effects of drain bias on the statistical variation of double-gate (DG) tunnel field-effect transistors (TFETs) are discussed in comparison with DG metal-oxide-semiconductor FETs (MOSFETs). Statistical variation corresponds to the variation of threshold voltage (V th), subthreshold swing (SS), and drain-induced barrier thinning (DIBT). The unique statistical variation characteristics of DG TFETs and DG MOSFETs with the variation of drain bias are analyzed by using full three-dimensional technology computer-aided design (TCAD) simulation in terms of the three dominant variation sources: line-edge roughness (LER), random dopant fluctuation (RDF) and workfunction variation (WFV). It is observed than DG TFETs suffer from less severe statistical variation as drain voltage increases unlike DG MOSFETs.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

NASA Astrophysics Data System (ADS)

Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

2018-03-01

The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-04-01

In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

NASA Astrophysics Data System (ADS)

Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

2017-01-01

Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

PubMed Central

Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

2017-01-01

Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor. PMID:28134275

Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

NASA Astrophysics Data System (ADS)

Patil, Prasanna Dnyaneshwar

Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from 3 cm2 V-1 s-11 in SiO2 back gated device to 18 cm2 V-1 s-11 in top gated electrolyte devices. Similarly, subthreshold swing can be improved from 30 V/dec to 0.2 V/dec and on/off ratio can be increased from 102 to 103 by using an electrolyte as a top gate. These FETs were also tested as phototransistors. Our photo-response characterization indicate photo-responsivity 32 A/W with external quantum efficiency exceeding 103 % when excited with a 658 nm wavelength laser at room temperature. Our phototransistor also exhibit response times tens of micros with specific detectivity (D*) values reaching 1012 Jones. The CuIn7Se11 phototransistor properties can be further tuned & enhanced by applying a back gate voltage along with increased source drain bias. For example, photo-responsivity can gain substantial improvement up to 320 A/W upon application of a gate voltage (Vg = 30 V) and/or increased source-drain bias. The photo-responsivity exhibited by these photo detectors are at least an order of magnitude better than commercially available conventional Si based photo detectors coupled with response times that are orders of magnitude better than several other family of layered materials investigated so far. Further photocurrent generation mechanisms, effect of traps is discussed in detail.

Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon chip with capacitors and transistors for interfacing organotypic brain slice of rat hippocampus.

PubMed

Hutzler, Michael; Fromherz, Peter

2004-04-01

Probing projections between brain areas and their modulation by synaptic potentiation requires dense arrays of contacts for noninvasive electrical stimulation and recording. Semiconductor technology is able to provide planar arrays with high spatial resolution to be used with planar neuronal structures such as organotypic brain slices. To address basic methodical issues we developed a silicon chip with simple arrays of insulated capacitors and field-effect transistors for stimulation of neuronal activity and recording of evoked field potentials. Brain slices from rat hippocampus were cultured on that substrate. We achieved local stimulation of the CA3 region by applying defined voltage pulses to the chip capacitors. Recording of resulting local field potentials in the CA1 region was accomplished with transistors. The relationship between stimulation and recording was rationalized by a sheet conductor model. By combining a row of capacitors with a row of transistors we determined a simple stimulus-response matrix from CA3 to CA1. Possible contributions of inhomogeneities of synaptic projection, of tissue structure and of neuroelectronic interfacing were considered. The study provides the basis for a development of semiconductor chips with high spatial resolution that are required for long-term studies of topographic mapping.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

PubMed

Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

2013-01-30

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

NASA Astrophysics Data System (ADS)

Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

2018-04-01

Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Total-dose radiation effects data for semiconductor devices, volume 1. [radiation resistance of components for the Galileo Project

NASA Technical Reports Server (NTRS)

Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

1981-01-01

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

NASA Astrophysics Data System (ADS)

Michailow, Wladislaw; Schülein, Florian J. R.; Möller, Benjamin; Preciado, Edwin; Nguyen, Ariana E.; von Son, Gretel; Mann, John; Hörner, Andreas L.; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2017-01-01

We have measured both the current-voltage ( ISD - VGS ) and capacitance-voltage (C- VGS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD - VGS characteristics over the entire range of VGS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

PubMed

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Junctionless Thin-Film Transistors Gated by an H₃PO₄-Incorporated Chitosan Proton Conductor.

PubMed

Liu, Huixuan; Xun, Damao

2018-04-01

We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.

Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2011-01-01

Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

PubMed

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

Polymer-based doping control for performance enhancement of wet-processed short-channel CNTFETs

NASA Astrophysics Data System (ADS)

Hartmann, Martin; Schubel, René; Claus, Martin; Jordan, Rainer; Schulz, Stefan E.; Hermann, Sascha

2018-01-01

The electrical transport properties of short-channel transistors based on single-walled carbon nanotubes (CNT) are significantly affected by bundling along with solution processing. We report that especially high off currents of CNT transistors are not only related to the incorporation of metallic CNTs but also to the incorporation of CNT bundles. By applying device passivation with poly(4-vinylpyridine), the impact of CNT bundling on the device performance can be strongly reduced due to increased gate efficiency as well as reduced oxygen and water-induced p-type doping, boosting essential field-effect transistor performance parameters by several orders of magnitude. Moreover, this passivation approach allows the hysteresis and threshold voltage of CNT transistors to be tuned.

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

NASA Astrophysics Data System (ADS)

Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

2018-04-01

We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Wei; Han, Shijiao; Huang, Wei

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role inmore » enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Healing of voids in the aluminum metallization of integrated circuit chips

NASA Technical Reports Server (NTRS)

Cuddihy, Edward F.; Lawton, Russell A.; Gavin, Thomas R.

1990-01-01

The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic contacts with and without molybdenum diffusion barriers. The devices without molybdenum exhibited important transconductance deterioration. MODFETs with molybdenum diffusion barriers were tolerant to temperatures above 300 C. This tolerance indicates that thermally activated failure mechanisms are slow at operational temperatures. Therefore, high-reliability MODFET-based circuits are possible.

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Liquid crystals for organic transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

Polarization induced doped transistor

DOEpatents

Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

2016-06-07

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Vector electric field measurement via position-modulated Kelvin probe force microscopy

NASA Astrophysics Data System (ADS)

Dwyer, Ryan P.; Smieska, Louisa M.; Tirmzi, Ali Moeed; Marohn, John A.

2017-10-01

High-quality spatially resolved measurements of electric fields are critical to understanding charge injection, charge transport, and charge trapping in semiconducting materials. Here, we report a variation of frequency-modulated Kelvin probe force microscopy that enables spatially resolved measurements of the electric field. We measure electric field components along multiple directions simultaneously by employing position modulation and lock-in detection in addition to numeric differentiation of the surface potential. We demonstrate the technique by recording linescans of the in-plane electric field vector in the vicinity of a patch of trapped charge in a 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT) organic field-effect transistor. This technique is simple to implement and should be especially useful for studying electric fields in spatially inhomogeneous samples like organic transistors and photovoltaic blends.

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.

PubMed

Stolichnov, Igor; Colla, Enrico; Setter, Nava; Wojciechowski, Tomasz; Janik, Elzbieta; Karczewski, Grzegorz

2006-12-15

Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.

Enzyme-polyelectrolyte multilayer assemblies on reduced graphene oxide field-effect transistors for biosensing applications.

PubMed

Piccinini, Esteban; Bliem, Christina; Reiner-Rozman, Ciril; Battaglini, Fernando; Azzaroni, Omar; Knoll, Wolfgang

2017-06-15

We present the construction of layer-by-layer (LbL) assemblies of polyethylenimine and urease onto reduced-graphene-oxide based field-effect transistors (rGO FETs) for the detection of urea. This versatile biosensor platform simultaneously exploits the pH dependency of liquid-gated graphene-based transistors and the change in the local pH produced by the catalyzed hydrolysis of urea. The use of an interdigitated microchannel resulted in transistors displaying low noise, high pH sensitivity (20.3µA/pH) and transconductance values up to 800 µS. The modification of rGO FETs with a weak polyelectrolyte improved the pH response because of its transducing properties by electrostatic gating effects. In the presence of urea, the urease-modified rGO FETs showed a shift in the Dirac point due to the change in the local pH close to the graphene surface. Markedly, these devices operated at very low voltages (less than 500mV) and were able to monitor urea in the range of 1-1000µm, with a limit of detection (LOD) down to 1µm, fast response and good long-term stability. The urea-response of the transistors was enhanced by increasing the number of bilayers due to the increment of the enzyme surface coverage onto the channel. Moreover, quantification of the heavy metal Cu 2+ (with a LOD down to 10nM) was performed in aqueous solution by taking advantage of the urease specific inhibition. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Jing; Liu, Xueqiang; Wang, Hailong; Hou, Wenlong; Zhao, Lele; Zhang, Haiquan

2017-01-01

Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated. The performance of CuPc OTFTs was studied without and with treatment by Solvent Vapor Annealing on CuPc film. The values of the threshold voltage without and with solvent-vapor annealing are -17 V and -10.5 V respectively. The field-effect mobility values in saturation region of CuPc thin-film transistors without and with Solvent Vapor Annealing are 0.00027 cm2/V s and 0.0025 cm2/V s respectively. Meanwhile, the high crystallization of the CuPc film with a larger grain size and less grain boundaries can be observed by investigating the morphology of the CuPc active layer through scanning electron microscopy and X-ray diffraction. The experimental results showed the decreased of the resistance of the conducting channel, that led to a performance improvement of the OTFTs.

Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning

NASA Astrophysics Data System (ADS)

Kofler, Johannes; Schmoltner, Kerstin; List-Kratochvil, Emil J. W.

2014-10-01

Electrolyte-gated organic field-effect transistors (EGOFETs) used as transducers and amplifiers in potentiometric sensors have recently attracted a significant amount of scientific interest. For that reason, the fundamental prerequisites to achieve a proper potentiometric signal amplification and transduction are examined. First, polarizable as well as non-polarizable semiconductor- and gate-electrolyte- interface combinations are investigated by normal pulse voltammetry. The results of these measurements are correlated with the corresponding transistor characteristics, clarifying the functional principle of EGOFETs and the requirements for high signal amplification. In addition to a good electrical performance, the EGOFET-transducers should also be compatible with the targeted sensing application. Accordingly, the influence of different gate materials and electrolytes on the sensing abilities, are discussed. Even though all physical requirements are met, EGOFETs typically exhibit irreversible degradation, if the gate potential exceeds a certain level. For that reason, EGOFETs have to be operated using a constant source-drain operation mode which is presented by means of an H+ (pH) sensitive ion-sensor.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

Vertical phase separation of 6,13-bis(triisopropylsilylethynyl) pentacene/poly(methyl methacrylate) blends prepared by electrostatic spray deposition for organic field-effect transistors

NASA Astrophysics Data System (ADS)

Onojima, Norio; Hara, Kazuhiro; Nakamura, Ayato

2017-05-01

Blend films composed of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and poly(methyl methacrylate) (PMMA) were prepared by electrostatic spray deposition (ESD). ESD is considered as an intermediate process between dry and wet processes since the solvent present in small droplets can almost be evaporated before arriving at the substrate. Post-drying treatments with the time-consuming evaporation of residual solvents can be omitted. However, it is still not clear that a vertically phase-separated structure can be formed in the ESD process since the vertical phase separation of the blend films is associated with the solvent evaporation. In this study, we fabricated bottom-gate, top-contact organic field-effect transistors based on the blend films prepared by ESD and the devices exhibited transistor behavior with small hysteresis. This result demonstrates that the vertical phase separation of a blend film (upper TIPS pentacene active layer/bottom PMMA gate insulator) can occur in the facile one-step ESD process.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors.

PubMed

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-04-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10 -2 cm 2 V -1 s -1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

PubMed Central

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-01-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. PMID:27877383

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

PubMed

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-05-04

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

Nano-textured high sensitivity ion sensitive field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hajmirzaheydarali, M.; Sadeghipari, M.; Akbari, M.

2016-02-07

Nano-textured gate engineered ion sensitive field effect transistors (ISFETs), suitable for high sensitivity pH sensors, have been realized. Utilizing a mask-less deep reactive ion etching results in ultra-fine poly-Si features on the gate of ISFET devices where spacing of the order of 10 nm and less is achieved. Incorporation of these nano-sized features on the gate is responsible for high sensitivities up to 400 mV/pH in contrast to conventional planar structures. The fabrication process for this transistor is inexpensive, and it is fully compatible with standard complementary metal oxide semiconductor fabrication procedure. A theoretical modeling has also been presented to predict themore » extension of the diffuse layer into the electrolyte solution for highly featured structures and to correlate this extension with the high sensitivity of the device. The observed ultra-fine features by means of scanning electron microscopy and transmission electron microscopy tools corroborate the theoretical prediction.« less

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Magnetophoretic transistors in a tri-axial magnetic field.

PubMed

Abedini-Nassab, Roozbeh; Joh, Daniel Y; Albarghouthi, Faris; Chilkoti, Ashutosh; Murdoch, David M; Yellen, Benjamin B

2016-10-18

The ability to direct and sort individual biological and non-biological particles into spatially addressable locations is fundamentally important to the emerging field of single cell biology. Towards this goal, we demonstrate a new class of magnetophoretic transistors, which can switch single magnetically labeled cells and magnetic beads between different paths in a microfluidic chamber. Compared with prior work on magnetophoretic transistors driven by a two-dimensional in-plane rotating field, the addition of a vertical magnetic field bias provides significant advantages in preventing the formation of particle clumps and in better replicating the operating principles of circuits in general. However, the three-dimensional driving field requires a complete redesign of the magnetic track geometry and switching electrodes. We have solved this problem by developing several types of transistor geometries which can switch particles between two different tracks by either presenting a local energy barrier or by repelling magnetic objects away from a given track, hereby denoted as "barrier" and "repulsion" transistors, respectively. For both types of transistors, we observe complete switching of magnetic objects with currents of ∼40 mA, which is consistent over a range of particle sizes (8-15 μm). The switching efficiency was also tested at various magnetic field strengths (50-90 Oe) and driving frequencies (0.1-0.6 Hz); however, we again found that the device performance only weakly depended on these parameters. These findings support the use of these novel transistor geometries to form circuit architectures in which cells can be placed in defined locations and retrieved on demand.

Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

NASA Astrophysics Data System (ADS)

Sworakowski, Juliusz

2015-07-01

The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Jeong, Yeon Taek; Dodabalapur, Ananth

2007-11-01

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3Å was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and Ion/Ioff ratio of 0.45cm2/Vs, 0.56V, and 7.5×101, respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

An analytical model for bio-electronic organic field-effect transistor sensors

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Giordano, Francesco; Magliulo, Maria; Palazzo, Gerardo; Torsi, Luisa

2013-09-01

A model for the electrical characteristics of Functional-Bio-Interlayer Organic Field-Effect Transistors (FBI-OFETs) electronic sensors is here proposed. Specifically, the output current-voltage characteristics of a streptavidin (SA) embedding FBI-OFET are modeled by means of the analytical equations of an enhancement mode p-channel OFET modified according to an ad hoc designed equivalent circuit that is also independently simulated with pspice. An excellent agreement between the model and the experimental current-voltage output characteristics has been found upon exposure to 5 nM of biotin. A good agreement is also found with the SA OFET parameters graphically extracted from the device transfer I-V curves.