Steps Towards Industrialization of Cu–III–VI2Thin‐Film Solar Cells:Linking Materials/Device Designs to Process Design For Non‐stoichiometric Photovoltaic Materials

PubMed Central

Chang, Hsueh‐Hsin; Sharma, Poonam; Letha, Arya Jagadhamma; Shao, Lexi; Zhang, Yafei; Tseng, Bae‐Heng

2016-01-01

The concept of in‐line sputtering and selenization become industrial standard for Cu–III–VI2 solar cell fabrication, but still it's very difficult to control and predict the optical and electrical parameters, which are closely related to the chemical composition distribution of the thin film. The present review article addresses onto the material design, device design and process design using parameters closely related to the chemical compositions. Its variation leads to change in the Poisson equation, current equation, and continuity equation governing the device design. To make the device design much realistic and meaningful, we need to build a model that relates the opto‐electrical properties to the chemical composition. The material parameters as well as device structural parameters are loaded into the process simulation to give a complete set of process control parameters. The neutral defect concentrations of non‐stoichiometric CuMSe2 (M = In and Ga) have been calculated under the specific atomic chemical potential conditions using this methodology. The optical and electrical properties have also been investigated for the development of a full‐function analytical solar cell simulator. The future prospects regarding the development of copper–indium–gallium–selenide thin film solar cells have also been discussed. PMID:27840790

Steps Towards Industrialization of Cu-III-VI2Thin-Film Solar Cells:Linking Materials/Device Designs to Process Design For Non-stoichiometric Photovoltaic Materials.

PubMed

Hwang, Huey-Liang; Chang, Hsueh-Hsin; Sharma, Poonam; Letha, Arya Jagadhamma; Shao, Lexi; Zhang, Yafei; Tseng, Bae-Heng

2016-10-01

The concept of in-line sputtering and selenization become industrial standard for Cu-III-VI 2 solar cell fabrication, but still it's very difficult to control and predict the optical and electrical parameters, which are closely related to the chemical composition distribution of the thin film. The present review article addresses onto the material design, device design and process design using parameters closely related to the chemical compositions. Its variation leads to change in the Poisson equation, current equation, and continuity equation governing the device design. To make the device design much realistic and meaningful, we need to build a model that relates the opto-electrical properties to the chemical composition. The material parameters as well as device structural parameters are loaded into the process simulation to give a complete set of process control parameters. The neutral defect concentrations of non-stoichiometric CuMSe 2 (M = In and Ga) have been calculated under the specific atomic chemical potential conditions using this methodology. The optical and electrical properties have also been investigated for the development of a full-function analytical solar cell simulator. The future prospects regarding the development of copper-indium-gallium-selenide thin film solar cells have also been discussed.

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Characterization of diamond thin films and related materials

NASA Astrophysics Data System (ADS)

McKindra, Travis Kyle

Thin carbon films including sputtered deposited graphite and CO 2 laser-assisted combustion-flame deposited graphite and diamond thin films were characterized using optical and electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Amorphous carbon thin films were deposited by DC magnetron sputtering using Ar/O2 gases. The film morphology changed with the oxygen content. The deposition rate decreased as the amount of oxygen increased due to oxygen reacting with the growing film. The use of oxygen in the working gas enhanced the crystalline nature of the films. Graphite was deposited on WC substrates by a CO2 laser-assisted O2/C2H2 combustion-flame method. Two distinct microstructural areas were observed; an inner core of dense material surrounded by an outer shell of lamellar-like material. The deposits were crystalline regardless of the laser power and deposition times of a few minutes. Diamond films were deposited by a CO2 laser-assisted O 2/C2H2/C2H4 combustion-flame method with the laser focused parallel to the substrate surface. The laser enhanced diamond growth was most pronounced when deposited with a 10.532 microm CO2 laser wavelength tuned to the CH2-wagging vibrational mode of the C2H4 molecule. Nucleation of diamond thin films deposited with and without using a CO 2 laser-assisted combustion-flame process was investigated. With no laser there was nucleation of a sub-layer of grains followed by irregular grain growth. An untuned laser wavelength yielded nucleation of a sub-layer then columnar grain growth. The 10.532 microm tuned laser wavelength caused growth of columnar grains.

Optimum processing of mammographic film.

PubMed

Sprawls, P; Kitts, E L

1996-03-01

Underprocessing of mammographic film can result in reduced contrast and visibility of breast structures and an unnecessary increase in radiation dose to the patient. Underprocessing can be caused by physical factors (low developer temperature, inadequate development time, insufficient developer agitation) or chemical factors (developer not optimized for film type; overdiluted, underreplenished, contaminated, or frequently changed developer). Conventional quality control programs are designed to produce consistent processing but do not address the issue of optimum processing. Optimum processing is defined as the level of processing that produces the film performance characteristics (contrast and sensitivity) specified by the film manufacturer. Optimum processing of mammographic film can be achieved by following a two-step protocol. The first step is to set up the processing conditions according to recommendations from the film and developer chemistry manufacturers. The second step is to verify the processing results by comparing them with sensitometric data provided by the film manufacturer.

Multiferroic Applications of Nanoarchitectured, Solution-Processed Materials

NASA Astrophysics Data System (ADS)

Buditama, Abraham Nataniel

This dissertation compiles work on sol-gel syntheses of multiferroic materials and applications thereof. Multiferroics, or materials that simultaneously exhibit multiple order parameters such as ferromagnetism, ferroelectricity, or ferroelasticity, may be fabricated by solution processing techniques. Specifically, these techniques may be used to control both the atomic and the nanoscale structures of piezoelectric lead zirconate titanate (PbZrxTi 1-xO3 or PZT) and magnetostrictive cobalt ferrite (CoFe 2O4 or CFO). The first part of this work focuses on strain-coupling PZT and CFO into a magnetoelectric composite. A mesoporous CFO framework was synthesized using block copolymer templating, which was subsequently conformally filled by PZT by atomic layer deposition (ALD). The final porosity of the film is controlled by the ALD PZT layer, and we show that this porosity influences the magnetoelectric coupling of the composite. An ex situ external electric field is applied to the composite, and samples with the greatest porosity, and thus greatest mechanical flexibility, were able to accommodate strain transfer to the CFO, resulting in a greater reduction of the sample saturation magnetization. The second part of this work focuses on using solution processing to control domain-level contributions to the material's ferroic properties. An iterative spin coating process can be used to create PZT films of arbitrary thickness. Electric domains are generally pinned in nanoscale PZT thin films, but models of PZT films on the mesoscale must consider domain reorientation. As for CFO, solution processing may be used to control the CFO grain size, which in turn limits the size of its magnetic domains, and subsequently its static magnetic properties.

Optical materials and films applied in industrial lasers

NASA Astrophysics Data System (ADS)

Zhang, Peng; Liu, Shengyong

1999-09-01

Optical materials and films are often used in industrial lasers. Most of industrial lasers work at visible spectrum and near-infrared spectrum. Only CO2 laser works at far- infrared region (10.6 micrometers ). The optical materials and films are categorized in this article, and the properties of the materials and films are related. From visible to infrared spectrum, many optical materials can be used: K9 glass, fused silica, germanium, gallium arsenide, zinc selenide, silicon, copper, and so on. Optical films for lasers include reflection coating, antireflection coating, edge filter, VRM (variable reflectance mirror) coating and polarizer. The characteristic and application of them will be introduced.

High index glass thin film processing for photonics and photovoltaic (PV) applications

NASA Astrophysics Data System (ADS)

Ogbuu, Okechukwu Anthony

To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

NASA Technical Reports Server (NTRS)

Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin G.; Abdeldayem, Hossin A.; Smith, David D.; Witherow, William K.

1997-01-01

Some of the primary purposes of this work are to study important technologies, particularly involving thin films, relevant to organic and polymeric materials for improving applicability to optical circuitry and devices and to assess the contribution of convection on film quality in unit and microgravity environments. Among the most important materials processing techniques of interest in this work are solution-based and by physical vapor transport, both having proven gravitational and acceleration dependence. In particular, PolyDiAcetylenes (PDA's) and PhthaloCyanines (Pc's) are excellent NonLinear Optical (NLO) materials with the promise of significantly improved NLO properties through order and film quality enhancements possible through microgravity processing. Our approach is to focus research on integrated optical circuits and optoelectronic devices relevant to solution-based and vapor processes of interest in the Space Sciences Laboratory at the Marshall Space Flight Center (MSFC). Modification of organic materials is an important aspect of achieving more highly ordered structures in conjunction with microgravity processing. Parallel activities include characterization of materials for particular NLO properties and determination of appropriation device designs consistent with selected applications. One result of this work is the determination, theoretically, that buoyancy-driven convection occurs at low pressures in an ideal gas in a thermalgradient from source to sink. Subsequent experiment supports the theory. We have also determined theoretically that buoyancy-driven convection occurs during photodeposition of PDA, an MSFC-patented process for fabricating complex circuits, which is also supported by experiment. Finally, the discovery of intrinsic optical bistability in metal-free Pc films enables the possibility of the development of logic gate technology on the basis of these materials.

Process for manufacture of thick film hydrogen sensors

DOEpatents

Perdieu, Louisa H.

2000-09-09

A thick film process for producing hydrogen sensors capable of sensing down to a one percent concentration of hydrogen in carrier gasses such as argon, nitrogen, and air. The sensor is also suitable to detect hydrogen gas while immersed in transformer oil. The sensor includes a palladium resistance network thick film printed on a substrate, a portion of which network is coated with a protective hydrogen barrier. The process utilizes a sequence of printing of the requisite materials on a non-conductive substrate with firing temperatures at each step which are less than or equal to the temperature at the previous step.

Apparatus and method for treating a cathode material provided on a thin-film substrate

DOEpatents

Hanson, Eric J.; Kooyer, Richard L.

2001-01-01

An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

Apparatus and method for treating a cathode material provided on a thin-film substrate

DOEpatents

Hanson, Eric J.; Kooyer, Richard L.

2003-01-01

An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

Processing-structure-properties relationships in PLA nanocomposite films

NASA Astrophysics Data System (ADS)

Di Maio, L.; Scarfato, P.; Garofalo, E.; Galdi, M. R.; D'Arienzo, L.; Incarnato, L.

2014-05-01

This work deals on the possibility to improve performances of PLA-based nanocomposite films, for packaging applications, through conveniently tuning materials and processing conditions in melt compounding technology. In particular, two types of polylactic acid and different types of filler selected from montmorillonites and bentonites families were used to prepare the hybrid systems by using a twin-screw extruder. The effect of biaxial drawing on morphology and properties of the nanocomposites, produced by film blowing, was investigated.

Thermoplastic processing of proteins for film formation--a review.

PubMed

Hernandez-Izquierdo, V M; Krochta, J M

2008-03-01

Increasing interest in high-quality food products with increased shelf life and reduced environmental impact has encouraged the study and development of edible and/or biodegradable polymer films and coatings. Edible films provide the opportunity to effectively control mass transfer among different components in a food or between the food and its surrounding environment. The diversity of proteins that results from an almost limitless number of side-chain amino-acid sequential arrangements allows for a wide range of interactions and chemical reactions to take place as proteins denature and cross-link during heat processing. Proteins such as wheat gluten, corn zein, soy protein, myofibrillar proteins, and whey proteins have been successfully formed into films using thermoplastic processes such as compression molding and extrusion. Thermoplastic processing can result in a highly efficient manufacturing method with commercial potential for large-scale production of edible films due to the low moisture levels, high temperatures, and short times used. Addition of water, glycerol, sorbitol, sucrose, and other plasticizers allows the proteins to undergo the glass transition and facilitates deformation and processability without thermal degradation. Target film variables, important in predicting biopackage performance under various conditions, include mechanical, thermal, barrier, and microstructural properties. Comparisons of film properties should be made with care since results depend on parameters such as film-forming materials, film formulation, fabrication method, operating conditions, testing equipment, and testing conditions. Film applications include their use as wraps, pouches, bags, casings, and sachets to protect foods, reduce waste, and improve package recyclability.

Discrete component bonding and thick film materials study

NASA Technical Reports Server (NTRS)

Kinser, D. L.

1975-01-01

The results are summarized of an investigation of discrete component bonding reliability and a fundamental study of new thick film resistor materials. The component bonding study examined several types of solder bonded components with some processing variable studies to determine their influence upon bonding reliability. The bonding reliability was assessed using the thermal cycle: 15 minutes at room temperature, 15 minutes at +125 C 15 minutes at room temperature, and 15 minutes at -55 C. The thick film resistor materials examined were of the transition metal oxide-phosphate glass family with several elemental metal additions of the same transition metal. These studies were conducted by preparing a paste of the subject composition, printing, drying, and firing using both air and reducing atmospheres. The resulting resistors were examined for adherence, resistance, thermal coefficient of resistance, and voltage coefficient of resistance.

Thermally Cross-Linkable Hole Transport Materials for Solution Processed Phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Kim, Beom Seok; Kim, Ohyoung; Chin, Byung Doo; Lee, Chil Won

2018-04-01

Materials for unique fabrication of a solution-processed, multi-layered organic light-emitting diode (OLED) were developed. Preparation of a hole transport layer with a thermally cross-linkable chemical structure, which can be processed to form a thin film and then transformed into an insoluble film by using an amine-alcohol condensation reaction with heat treatment, was investigated. Functional groups, such as triplenylamine linked with phenylcarbazole or biphenyl, were employed in the chemical structure of the hole transport layer in order to maintain high triplet energy properties. When phenylcarbazole or biphenyl compounds continuously react with triphenylamine under acid catalysis, a chemically stable thin film material with desirable energy-level properties for a blue OLED could be obtained. The prepared hole transport materials showed excellent surface roughness and thermal stability in comparison with the commercial reference material. On the solution-processed model hole transport layer, we fabricated a device with a blue phosphorescent OLED by using sequential vacuum deposition. The maximum external quantum, 19.3%, was improved by more than 40% over devices with the commercial reference material (11.4%).

Material properties of novel polymeric films

NASA Astrophysics Data System (ADS)

Kim, Gene

This dissertation will study the material properties of two types of novel polymer films (polyelectrolyte multilayer films and photolithographic polymer films). The formation of polylelectrolyte multilayer films onto functionalized aluminum oxide surfaces and functionalized poly(ethylene terephthaltate) (PET) were studied. Functionalization of the aluminum oxide surfaces was achieved via silane coupling. Functionalization of PET surfaces was achieved via hydrolysis and amidation. Surface characterization techniques such as X-ray photoelectron spectroscopy (XPS) and dynamic contact angle measurements were used to monitor the polyelectrolyte multilayer formation. Mechanical properties of the aluminum oxide supported polyelectrolyte multilayer films were tested using a simplified peel test. XPS was used to analyze the surfaces before and after peel. Single lap shear joint specimens were constructed to test the adhesive shear strength of the PET-supported polyelectrolyte multilayer film samples with the aid of a cyanoacrylate adhesive. The adhesive shear strength and its relation with the type of functionalization, number of polyelectrolyte layers, and the effect of polyelectrolyte conformation using added salt were explored. Also, characterization on the single lap joints after adhesive failure was carried out to determine the locus of failure within the multilayers by using XPS and SEM. Two types of photolithographic polymers were formulated and tested. These two polymers (photocrosslinkable polyacrylate (PUA), and a photocrosslinkable polyimide (HRP)) were used to investigate factors that would affect the structural integrity of these particular polymers under environmental variables such as processing (time, UV cure, pressure, and temperature) and ink exposure. Thermomechanical characterization was carried out to see the behavior of these two polymers under these environmental variables. Microscopic techniques were employed to study the morphological behavior of

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Positron annihilation studies of vacancy related defects in ceramic and thin film Pb(Zr,Ti)O3 materials

NASA Astrophysics Data System (ADS)

Keeble, D. J.; Krishnan, A.; Umlor, M. T.; Lynn, K. G.; Warren, W. L.; Dimos, D.; Tuttle, B. A.

Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O3 (PZT) materials have been completed. This paper examines effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films, and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.

Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion

PubMed Central

Wickman, B.; Bastos Fanta, A.; Burrows, A.; Hellman, A.; Wagner, J. B.; Iandolo, B.

2017-01-01

Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance. PMID:28091573

PREFACE: Innovations in Thin Film Processing and Characterisation

NASA Astrophysics Data System (ADS)

Henrion, Gérard; Belmahi, Mohammed; Andrieu, Stéphane

2010-07-01

This special issue contains selected papers which were presented as invited or contributed communications at the 4th International Conference on Innovation in Thin Film Processing and Characterization (ITFPC'09) which was held on 17-20 November, 2009 in Nancy (France) Jointly organized by the French Vacuum Society and the Institut Jean Lamour-a joint research unit specialized in materials, metallurgy, nano-sciences, plasmas and surfaces-the ITFPC conferences aim at providing an open forum to discuss the progress and latest developments in thin film processing and engineering. Invited lectures aim particularly at providing overviews on scientific topics while contributed communications focus on particular cutting-edge aspects of thin film science and technology, including CVD, PVD and ion beam assisted processes. The 2009 conference was organized along the 6 main following topics: Thin films processing and surface engineering Numerical simulation and thin film characterization Protective applications of thin films Energy, environment and health applications of thin films Micro- and nano-patterning of thin films New properties and applications resulting from patterned thin films which were completed by a special half day session devoted to industry-supported innovation. 180 scientists from 20 worldwide countries attended the different sessions along with the 9 invited lectures and 130 contributions were given. Besides the outstanding scientific program, a half-day tutorial session preceded the conference. During the short courses, emphasis was laid on: Lithography for thin film patterning Mechanical properties of thin films Principles and applications of reactive sputtering processes. The French Vacuum Society granted financial aid to PhD students who applied for it in order to encourage the participation of young scientists. The 19 papers published in this volume were accepted for publication after peerreviewal as for regular papers. As chairmen of this conference

Efficient production of nanoparticle-loaded orodispersible films by process integration in a stirred media mill.

PubMed

Steiner, Denise; Finke, Jan Henrik; Kwade, Arno

2016-09-25

Orodispersible films possess a great potential as a versatile platform for nanoparticle-loaded oral dosage forms. In this case, poorly water-soluble organic materials were ground in a stirred media mill and embedded into a polymer matrix. The aim of this study was the shortening of this manufacturing process by the integration of several process steps into a stirred media mill without facing disadvantages regarding the film quality. Furthermore, this process integration is time conserving due to the high stress intensities provided in the mill and applicable for high solids contents and high suspension viscosities. Two organic materials, the model compound Anthraquinone and the active pharmaceutical ingredient Naproxen were investigated in this study. Besides the impact of the film processing on the crystallinity of the particles in the orodispersible film, a particle load of up to 50% was investigated with the new developed processing route. Additionally, a disintegration test was developed, combining an appropriate amount of saliva substitute and a clear endpoint determination. In summary, high nanoparticle loads in orodispersible films with good particle size preservation after film redispersion in water as well as a manufacturing of the film casting mass within a few minutes in a stirred media mill was achieved. Copyright © 2016 Elsevier B.V. All rights reserved.

Laser processing of thin films for industrial packaging

NASA Astrophysics Data System (ADS)

Sozzi, Michele; Lutey, Adrian H. A.; Cucinotta, Annamaria; Selleri, Stefano; Molari, Pier Gabriele

2014-05-01

Single layer thin-film materials such as aluminum, polyethylene, polypropylene, and their multi-layer combinations such as aluminum-paper have been exposed to different laser radiation. A wide number of samples have been processed with 10 - 12.5 ns IR and Green, and 500 - 800 ps IR laser radiation at different translating speeds ranging from 50 mm/s to 1 m/s. High quality incisions have been obtained for all tested materials within the experimental conditions. The presented results provide the necessary parameters for an efficient cut and processing of the tested materials, for the employment of pulsed laser sources in the packaging industry, allowing the laser to prevail in lieu of more costly and energy intensive methods.

Processing materials in space - The history and the future

NASA Technical Reports Server (NTRS)

Chassay, Roger; Carswell, Bill

1987-01-01

The development of materials processing in space, and some of the Soyuz, Apollo, Skylab, and Shuttle orbital materials experiments are reviewed. Consideration is given to protein crystal growth, electrophoresis, low-gravity isoelectric focusing, phase partitioning, a monodisperse latex reactor, semiconductor crystal growth, solution crystal growth, the triglycine sulfate experiment, vapor crystal growth experiments, the mercuric iodide experiment, electronic and electrooptical materials, organic thin films and crystalline solids, deep undercooling of metals and alloys, magnetic materials, immiscible materials, metal solidification research, reluctant glass-forming materials, and containerless glass formation. The space processing apparatuses and ground facilities, for materials processing are described. Future facilities for commercial research, development, and manufacturing in space are proposed.

Surface energy characteristics of zeolite embedded PVDF nanofiber films with electrospinning process

NASA Astrophysics Data System (ADS)

Kang, Dong Hee; Kang, Hyun Wook

2016-11-01

Electrospinning is a nano-scale fiber production method with various polymer materials. This technique allows simple fiber diameters control by changing the physical conditions such as applied voltage and polymer solution viscosity during the fabrication process. The electrospun polymer fibers form a thin porous film with high surface area to volume ratio. Due to these unique characteristics, it is widely used for many application fields such as photocatalyst, electric sensor, and antibacterial scaffold for tissue engineering. Filtration is one of the main applications of electrospun polymer fibers for specific application of filtering out dust particles and dehumidification. Most polymers which are commonly used in electrospinning are hard to perform the filtering and dehumidification simultaneously because of their low hygroscopic property. To overcome this obstacle, the desiccant polymers are developed such as polyacrylic acid and polysulfobetaine methacrylate. However, the desiccant polymers are generally expensive and need special solvent for electrospinning. An alternating way to solve these problems is mixing desiccant material like zeolite in polymer solution during an electrospinning process. In this study, the free surface energy characteristics of electrospun polyvinylidene fluoride (PVDF) film with various zeolite concentrations are investigated to control the hygroscopic property of general polymers. Fundamental physical property of wettability with PVDF shows hydrophobicity. The electrospun PVDF film with small weight ratio with higher than 0.1% of zeolite powder shows diminished contact angles that certifying the wettability of PVDF can be controlled using desiccant material in electrospinning process. To quantify the surface energy of electrospun PVDF films, sessile water droplets are introduced on the electrospun PVDF film surface and the contact angles are measured. The contact angles of PVDF film are 140° for without zeolite and 80° for with 5

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

PubMed

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

A flammability study of thin plastic film materials

NASA Technical Reports Server (NTRS)

Skinner, S. Ballou

1990-01-01

The Materials Science Laboratory at the Kennedy Space Center presently conducts flammability tests on thin plastic film materials by using a small needle rake method. Flammability data from twenty-two thin plastic film materials were obtained and cross-checked by using three different testing methods: (1) the presently used small needle rake; (2) the newly developed large needle rake; and (3) the previously used frame. In order to better discern the melting-burning phenomenon of thin plastic film material, five additional specific experiments were performed. These experiments determined the following: (1) the heat sink effect of each testing method; (2) the effect of the burn angle on the burn length or melting/shrinkage length; (3) the temperature profile above the ignition source; (4) the melting point and the fire point of each material; and (5) the melting/burning profile of each material via infrared (IR) imaging. The results of these experimentations are presented.

Fabrication of In(0.75)Zn(1.5)Sn(1.0) (IZTO) Thin-Film Transistors Using Solution-Processable Materials and PZT Inkjet-Printing.

PubMed

Lee, Tai-Kuang; Liuand, Chao-Te; Lee, Wen-Hsi

2017-01-01

Recently, Thin Film Transistors (TFTs) have been studied widely because of potential applications in low cost, low-temperature process and flexible displays. They can be fabricated by easy processes based on solution methods. But the mobility of organic TFTs is lower and the threshold voltage is higher than amorphous Si TFTs. In order to enhance the channel mobility and satisfy with the requirement of low-cost fabrication, we prepare a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. In our investigations, we attempt to obtain a high performance and low-cost TFT via preparing materials, designing device structure, and using PZT inkjet-printing technology. A stable and non-precipitated metal oxide ink with appropriate doping was prepared for the fabrication of an InxZn1.5Sn1.0 (IZTO) by PZT inkjet-printing. The soluble direct-printing process is a powerful tool for material research and implies that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications. Transparent materials including dielectric PVP, conductive carbon nanotube (CNT) and active IZTO were employed into the fabrication of our PZT inkjet-printing process. After annealed at 180 °C, The experimental all-printed TFT exhibit the carrier mobility of 0.194 cm2/Vs, sub-threshold slope of 20 V/decade, and the threshold voltage of 5 V, initially. All-inkjet-printed films have great transparency, potentially in transparent electronics and the transmittance pattern in visible part of the spectrum (400–700 nm) is over 80%.

Plasma characterization studies for materials processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pfender, E.; Heberlein, J.

New applications for plasma processing of materials require a more detailed understanding of the fundamental processes occurring in the processing reactors. We have developed reactors offering specific advantages for materials processing, and we are using modeling and diagnostic techniques for the characterization of these reactors. The emphasis is in part set by the interest shown by industry pursuing specific plasma processing applications. In this paper we report on the modeling of radio frequency plasma reactors for use in materials synthesis, and on the characterization of the high rate diamond deposition process using liquid precursors. In the radio frequency plasma torchmore » model, the influence of specific design changes such as the location of the excitation coil on the enthalpy flow distribution is investigated for oxygen and air as plasma gases. The diamond deposition with liquid precursors has identified the efficient mass transport in form of liquid droplets into the boundary layer as responsible for high growth, and the chemical properties of the liquid for the film morphology.« less

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Color Imaging management in film processing

NASA Astrophysics Data System (ADS)

Tremeau, Alain; Konik, Hubert; Colantoni, Philippe

2003-12-01

The latest research projects in the laboratory LIGIV concerns capture, processing, archiving and display of color images considering the trichromatic nature of the Human Vision System (HSV). Among these projects one addresses digital cinematographic film sequences of high resolution and dynamic range. This project aims to optimize the use of content for the post-production operators and for the end user. The studies presented in this paper address the use of metadata to optimise the consumption of video content on a device of user's choice independent of the nature of the equipment that captured the content. Optimising consumption includes enhancing the quality of image reconstruction on a display. Another part of this project addresses the content-based adaptation of image display. Main focus is on Regions of Interest (ROI) operations, based on the ROI concepts of MPEG-7. The aim of this second part is to characterize and ensure the conditions of display even if display device or display media changes. This requires firstly the definition of a reference color space and the definition of bi-directional color transformations for each peripheral device (camera, display, film recorder, etc.). The complicating factor is that different devices have different color gamuts, depending on the chromaticity of their primaries and the ambient illumination under which they are viewed. To match the displayed image to the aimed appearance, all kind of production metadata (camera specification, camera colour primaries, lighting conditions) should be associated to the film material. Metadata and content build together rich content. The author is assumed to specify conditions as known from digital graphics arts. To control image pre-processing and image post-processing, these specifications should be contained in the film's metadata. The specifications are related to the ICC profiles but need additionally consider mesopic viewing conditions.

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

NASA Technical Reports Server (NTRS)

Frazier, Donald O.; Penn, Benjamin G.; Smith, David D.; Witherow, William K.; Paley, Mark S.; Abdeldayem, Hossin A.

1997-01-01

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and photonic devices. There is a myriad of possibilities among organics which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials such as thin-film waveguides allows full exploitation of their desirable qualities by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films, such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organics have many features that make them desirable for use in optical devices such as high second- and third-order nonlinearities, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. In this chapter, we discuss photonic and optoelectronic applications of a few organic materials and the potential role of microgravity on processing these materials. It is of interest to note how materials with second- and third-order nonlinear optical behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials.

Cibachrome testing. [photographic processing and printing materials

NASA Technical Reports Server (NTRS)

Weinstein, M. S.

1974-01-01

The use of Cibachrome products as a solution to problems encountered when contact printing Kodak film type SO-397 onto Kodak Ektrachrome color reversal paper type 1993 is investigated. A roll of aerial imagery consisting of Kodak film types SO-397 and 2443 was contact printed onto Cibachrome and Kodak materials and compared in terms of color quality, resolution, cost, and compatibility with existing equipment and techniques. Objective measurements are given in terms of resolution and sensitometric response. Comparison prints and transparencies were viewed and ranked according to overall quality and aesthetic appeal. It is recommended that Cibachrome Print material be used in place of Kodak Ektachrome paper because it is more easily processed, the cost is equivalent, and it provides improved resolution, color quality, and image fade resistance.

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

NASA Technical Reports Server (NTRS)

Frazier, Donald 0; Penn, Benjamin G.; Smith, David; Witherow, William K.; Paley, M. S.; Abdeldayem, Hossin A.

1998-01-01

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and photonic devices. There is a myriad of possibilities among organic which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials such as thin-film waveguides allows full exploitation of their desirable qualities by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films, such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organics have many features that make Abstract: them desirable for use in optical devices such as high second- and third-order nonlinearities, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. In this chapter, we discuss photonic and optoelectronic applications of a few organic materials and the potential role of microgravity on processing these materials. It is of interest to note how materials with second- and third-order nonlinear optical behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials. We focus our discussion on third-order materials for all-optical switching, and second-order materials for all-optical switching, and second-order materials for frequency conversion and electrooptics.

Dielectric Spectroscopy Analysis of Aged EVOH films with Application to Deterioration of Food Packaging Materials

NASA Astrophysics Data System (ADS)

Hoeller, Timothy

2007-06-01

Samples of EVOH films from compositions of 29 - 44 mol% ethylene content were exposed to thermal aging with and without light exposure. The results of Dielectric Spectroscopy on select samples showed Cole-Cole plots of skewed dielectric constant indicating multiple distributions of dipole relaxation times. The onset for decreases in dielectric response occurs earlier in samples exposed to elevated temperature under light exposure. Lower permittivity is exhibited in samples of higher ethylene content. Results from heat exposed samples are presented. Colorimetric analysis indicates only a slight film yellowing in one case. Raman spectroscopy on untreated films discerns changes in the C-C-O stretch associated with the alcohol. The effects of aging on microstructure may cause hindrance of molecular motion from moisture desorption. Slight material degradation occurs from film hardening presumably due to crosslinking. An electrical circuit model of the conduction processes associated with the EVOH films is presented. Dielectric analysis shows promise for monitoring material changes related to deterioration. We are also using these methods to understand Fluorescence Imaging which has been recently released for paper and plastic materials analysis. Future work may include refinement of these techniques for identification of changes in material properties correlated to packaging material barrier resistance.

Control method and system for use when growing thin-films on semiconductor-based materials

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2001-01-01

A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

NASA Astrophysics Data System (ADS)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

NASA Technical Reports Server (NTRS)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Molecular solution processing of metal chalcogenide thin film solar cells

NASA Astrophysics Data System (ADS)

Yang, Wenbing

The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

DOEpatents

Boyle, Timothy J.

1999-01-01

A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Combinatorial techniques to efficiently investigate and optimize organic thin film processing and properties.

PubMed

Wieberger, Florian; Kolb, Tristan; Neuber, Christian; Ober, Christopher K; Schmidt, Hans-Werner

2013-04-08

In this article we present several developed and improved combinatorial techniques to optimize processing conditions and material properties of organic thin films. The combinatorial approach allows investigations of multi-variable dependencies and is the perfect tool to investigate organic thin films regarding their high performance purposes. In this context we develop and establish the reliable preparation of gradients of material composition, temperature, exposure, and immersion time. Furthermore we demonstrate the smart application of combinations of composition and processing gradients to create combinatorial libraries. First a binary combinatorial library is created by applying two gradients perpendicular to each other. A third gradient is carried out in very small areas and arranged matrix-like over the entire binary combinatorial library resulting in a ternary combinatorial library. Ternary combinatorial libraries allow identifying precise trends for the optimization of multi-variable dependent processes which is demonstrated on the lithographic patterning process. Here we verify conclusively the strong interaction and thus the interdependency of variables in the preparation and properties of complex organic thin film systems. The established gradient preparation techniques are not limited to lithographic patterning. It is possible to utilize and transfer the reported combinatorial techniques to other multi-variable dependent processes and to investigate and optimize thin film layers and devices for optical, electro-optical, and electronic applications.

LTCC Thick Film Process Characterization

DOE PAGES

Girardi, M. A.; Peterson, K. A.; Vianco, P. T.

2016-05-01

Low temperature cofired ceramic (LTCC) technology has proven itself in military/space electronics, wireless communication, microsystems, medical and automotive electronics, and sensors. The use of LTCC for high frequency applications is appealing due to its low losses, design flexibility and packaging and integration capability. Moreover, we summarize the LTCC thick film process including some unconventional process steps such as feature machining in the unfired state and thin film definition of outer layer conductors. The LTCC thick film process was characterized to optimize process yields by focusing on these factors: 1) Print location, 2) Print thickness, 3) Drying of tapes and panels,more » 4) Shrinkage upon firing, and 5) Via topography. Statistical methods were used to analyze critical process and product characteristics in the determination towards that optimization goal.« less

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

NASA Astrophysics Data System (ADS)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanrikulu, Mahmud Yusuf, E-mail: mytanrikulu@adanabtu.edu.tr; Rasouli, Hamid Reza; Ghaffari, Mohammad

2016-05-15

This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

PubMed

Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

2009-11-09

Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} thin films and powders

DOEpatents

Boyle, T.J.

1999-01-12

A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650 C and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures. 2 figs.

Process for fabricating composite material having high thermal conductivity

DOEpatents

Colella, Nicholas J.; Davidson, Howard L.; Kerns, John A.; Makowiecki, Daniel M.

2001-01-01

A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Electrofabrication of functional materials: Chloramine-based antimicrobial film for infectious wound treatment.

PubMed

Qu, Xue; Liu, Huan; Zhang, Chuchu; Lei, Yu; Lei, Miao; Xu, Miao; Jin, Dawei; Li, Peng; Yin, Meng; Payne, Gregory F; Liu, Changsheng

2018-06-01

Electrical signals can be imposed with exquisite spatiotemporal control and provide exciting opportunities to create structure and confer function. Here, we report the use of electrical signals to program the fabrication of a chloramine wound dressing with high antimicrobial activity. This method involves two electrofabrication steps: (i) a cathodic electrodeposition of an aminopolysaccharide chitosan triggered by a localized region of high pH; and (ii) an anodic chlorination of the deposited film in the presence of chloride. This electrofabrication process is completed within several minutes and the chlorinated chitosan can be peeled from the electrode to yield a free-standing film. The presence of active NCl species in this electrofabricated film was confirmed with chlorination occurring first on the amine groups and then on the amide groups when large anodic charges were used. Electrofabrication is quantitatively controllable as the cathodic input controls film growth during deposition and the anodic input controls film chlorination. In vitro studies demonstrate that the chlorinated chitosan film has antimicrobial activities that depend on the chlorination degree. In vivo studies with a MRSA infected wound healing model indicate that the chlorinated chitosan film inhibited bacterial growth, induced less inflammation, developed reorganized epithelial and dermis structures, and thus promoted wound healing compared to a bare wound or wound treated with unmodified chitosan. These results demonstrate the fabrication of advanced functional materials (i.e., antimicrobial wound dressings) using controllable electrical signals to both organize structure through non-covalent interactions (i.e., induce chitosan's reversible self-assembly) and to initiate function-conferring covalent modifications (i.e., generate chloramine bonds). Potentially, electrofabrication may provide a simple, low cost and sustainable alternative for materials fabrication. We believe this work is

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

PubMed

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varghese, Tony; Hollar, Courtney; Richardson, Joseph

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE PAGES

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; ...

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

PubMed Central

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

2016-01-01

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications. PMID:27615036

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Hypericum perforatum incorporated chitosan films as potential bioactive wound dressing material.

PubMed

Güneş, Seda; Tıhmınlıoğlu, Funda

2017-09-01

Recent studies in wound dressing applications offer new therapies and promote wound healing process. The aim of this study was to develop Hypericum perforatum (St John's Wort) oil incorporated chitosan films for wound dressing applications. H. perforatum oil as a potential therapeutic agent was encapsulated in chitosan film to achieve a better wound dressing material. Oil incorporated chitosan films were successfully prepared by solvent casting method in different oil concentrations (0.25-1.5%v/v). Water vapor permeability (WVP), mechanical test, swelling behavior and surface hydrophobicity were performed in order to characterize the prepared films. Antimicrobial test was performed by disc diffusion method and the growth inhibition effects of the films including different amount of H. perforatum oil were investigated on Escherichia coli and Staphylococcus aureus. WVP increased with oil incorporation and the highest value was obtained for 0.25% oil concentration.The highest strain value was obtained in 0.25% oil content films although tensile stress decreased with increasing oil content. H. perforatum oil incorporated films had antimicrobial effect on both microorganisms. Chitosan based films had no cytotoxic effects on NIH3T3fibroblast cells and provided a good surface for cell attachment and proliferation. The results showed that the H. perforatum incorporated chitosan films seems to be a potential and novel biomaterial for wound healing applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Released Textbooks, Films and Other Teaching Materials.

ERIC Educational Resources Information Center

National Science Foundation, Washington, DC.

Some course and curriculum improvement projects funded by the National Science Foundation have produced definitive editions of textbooks, other printed materials, and instructional films. This bulletin lists materials available in 1968 through commercial or college and university sources. The publications include textbooks, laboratory guides,…

Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Rybicki, George C.; Raffaelle, Ryne P.; Harris, Jerry D.; Hehemann, David G.; Junek, William; Gorse, Joseph; Thompson, Tracy L.; Hollingsworth, Jennifer A.; Buhro, William E.

2000-01-01

The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Microbiologic contamination during dental radiographic film processing.

PubMed

Stanczyk, D A; Paunovich, E D; Broome, J C; Fatone, M A

1993-07-01

This study investigated microbiologic contamination of an automatic dental radiograph processor and daylight loader during a week of simulated clinical use. Pure cultures of Candida albicans, Streptococcus pneumoniae, Staphylococcus aureus, or Klebsiella pneumoniae were used to contaminate 320 vinyl intraoral radiograph packets. Each end of the films was deliberately contaminated during opening. These films and 24 uncontaminated control films were processed. Daylight loader ports, inlet and outlet rollers, fixer and developer samples, and 12 processed films were cultured daily. To simulate a weekend, the processor sites were cultured during 72 hours of inactivity after the contaminated runs. The results showed that contamination of the processor and daylight loader occurred and remained even after 48 hours of inactivity. Films remained contaminated after processing. In addition, cross-contamination of films occurred in the processor.

Hydrogen gettering packing material, and process for making same

DOEpatents

LeMay, James D.; Thompson, Lisa M.; Smith, Henry Michael; Schicker, James R.

2001-01-01

A hydrogen gettering system for a sealed container is disclosed comprising packing material for use within the sealed container, and a coating film containing hydrogen gettering material on at least a portion of the surface of such packing material. The coating film containing the hydrogen gettering material comprises a mixture of one or more organic materials capable of reacting with hydrogen and one or more catalysts capable of catalyzing the reaction of hydrogen with such one or more organic materials. The mixture of one or more organic materials capable of reacting with hydrogen and the one or more catalysts is dispersed in a suitable carrier which preferably is a curable film-forming material. In a preferred embodiment, the packing material comprises a foam material which is compatible with the coating film containing hydrogen gettering material thereon.

CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

Film Music: The Material, Literature and Present State of Research.

ERIC Educational Resources Information Center

Marks, Martin

1982-01-01

A comprehensive look at the neglected art of film music. Examines the nature of the medium, the literature (how others have wrestled with film music's recalcitrant materials), and the present state of research into film music. Includes a bibliography. (PD)

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Solution processing of chalcogenide materials using thiol-amine "alkahest" solvent systems.

PubMed

McCarthy, Carrie L; Brutchey, Richard L

2017-05-02

Macroelectronics is a major focus in electronics research and is driven by large area applications such as flat panel displays and thin film solar cells. Innovations for these technologies, such as flexible substrates and mass production, will require efficient and affordable semiconductor processing. Low-temperature solution processing offers mild deposition methods, inexpensive processing equipment, and the possibility of high-throughput processing. In recent years, the discovery that binary "alkahest" mixtures of ethylenediamine and short chain thiols possess the ability to dissolve bulk inorganic materials to yield molecular inks has lead to the wide study of such systems and the straightforward recovery of phase pure crystalline chalcogenide thin films upon solution processing and mild annealing of the inks. In this review, we recount the work that has been done toward elucidating the scope of this method for the solution processing of inorganic materials for use in applications such as photovoltaic devices, electrocatalysts, photodetectors, thermoelectrics, and nanocrystal ligand exchange. We also take stock of the wide range of bulk materials that can be used as soluble precursors, and discuss the work that has been done to reveal the nature of the dissolved species. This method has provided a vast toolbox of over 65 bulk precursors, which can be utilized to develop new routes to functional chalcogenide materials. Future studies in this area should work toward a better understanding of the mechanisms involved in the dissolution and recovery of bulk materials, as well as broadening the scope of soluble precursors and recoverable functional materials for innovative applications.

The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

NASA Astrophysics Data System (ADS)

Hille, David M.

The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

Thin Film Materials and Devices for Resistive Temperature Sensing Applications

DTIC Science & Technology

2015-05-21

materials are metals, their alloys, semiconducting materials, and thermistor materials such as spinels of manganese, cobalt and nickel oxides. 16 10...improved by doping of the thin films to increase the available carriers for transport. In the case of SiGe:H thin films, Ajmera et al. and Saint John et al...Conference, Freiburg, Fed. Rep. of Germany, 1989. [55] M. Stutzmann, J. Stuke and H. Dersch, "Electron Spin Resonance of Doped Glow-discharge

Evaporation system and method for gas jet deposition of thin film materials

DOEpatents

Schmitt, J.J.; Halpern, B.L.

1994-10-18

A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

Evaporation system and method for gas jet deposition of thin film materials

DOEpatents

Schmitt, Jerome J.; Halpern, Bret L.

1994-01-01

A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

NREL Opens Large Database of Inorganic Thin-Film Materials | News | NREL

Science.gov Websites

Inorganic Thin-Film Materials April 3, 2018 An extensive experimental database of inorganic thin-film Energy Laboratory (NREL) is now publicly available. The High Throughput Experimental Materials (HTEM Schroeder / NREL) "All existing experimental databases either contain many entries or have all this

Processing of materials for uniform field emission

DOEpatents

Pam, L.S.; Felter, T.E.; Talin, A.; Ohlberg, D.; Fox, C.; Han, S.

1999-01-12

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/{micro}m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 {micro}m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material. 2 figs.

Processing of materials for uniform field emission

DOEpatents

Pam, Lawrence S.; Felter, Thomas E.; Talin, Alec; Ohlberg, Douglas; Fox, Ciaran; Han, Sung

1999-01-01

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.

Effect of Sorbitol Plasticizer on the Structure and Properties of Melt Processed Polyvinyl Alcohol Films.

PubMed

Tian, Huafeng; Liu, Di; Yao, Yuanyuan; Ma, Songbai; Zhang, Xing; Xiang, Aimin

2017-12-01

Poly (vinyl alcohol) (PVA) possesses wide applications as food packaging materials, but is difficult to melt process for its strong inter/intra hydrogen bonding. In this work, flexible PVA films with different content of sorbitol plasticizers were prepared by melt processing with the assistance of water. And the influence of sorbitol plasticizer content on the crystallinity, optical transparency, water-retaining capability, mechanical properties, thermal stability and oxygen and water permeability were investigated. The results indicated that sorbitol dramatically improved the melt processing ability of PVA. Sorbitol could interact with PVA to form strong hydrogen bonding interactions, which would decrease the original hydrogen bonding of the matrix, resulting in the decrease of crystallinity degrees. The glass transition, melting and crystallization peak temperatures decreased with the increase of sorbitol. All the films exhibited fine optical transparency. The water retaining capability were improved with the increase of sorbitol. Especially, an increase in elongation at break and decrease in Young's modulus and tensile strength were observed indicating good plasticizing effect of sorbitol on PVA films. In addition, the PVA films prepared in this work exhibited fine barrier properties against oxygen and water, suggesting wide application potential as packaging materials. © 2017 Institute of Food Technologists®.

Role of Polymorphism and Thin-Film Morphology in Organic Semiconductors Processed by Solution Shearing

PubMed Central

2018-01-01

Organic semiconductors (OSCs) are promising materials for cost-effective production of electronic devices because they can be processed from solution employing high-throughput techniques. However, small-molecule OSCs are prone to structural modifications because of the presence of weak van der Waals intermolecular interactions. Hence, controlling the crystallization in these materials is pivotal to achieve high device reproducibility. In this perspective article, we focus on controlling polymorphism and morphology in small-molecule organic semiconducting thin films deposited by solution-shearing techniques compatible with roll-to-roll systems. Special attention is paid to the influence that the different experimental deposition parameters can have on thin films. Further, the main characterization techniques for thin-film structures are reviewed, highlighting the in situ characterization tools that can provide crucial insights into the crystallization mechanisms. PMID:29503976

Application of a tablet film coating model to define a process-imposed transition boundary for robust film coating.

PubMed

van den Ban, Sander; Pitt, Kendal G; Whiteman, Marshall

2018-02-01

A scientific understanding of interaction of product, film coat, film coating process, and equipment is important to enable design and operation of industrial scale pharmaceutical film coating processes that are robust and provide the level of control required to consistently deliver quality film coated product. Thermodynamic film coating conditions provided in the tablet film coating process impact film coat formation and subsequent product quality. A thermodynamic film coating model was used to evaluate film coating process performance over a wide range of film coating equipment from pilot to industrial scale (2.5-400 kg). An approximate process-imposed transition boundary, from operating in a dry to a wet environment, was derived, for relative humidity and exhaust temperature, and used to understand the impact of the film coating process on product formulation and process control requirements. This approximate transition boundary may aid in an enhanced understanding of risk to product quality, application of modern Quality by Design (QbD) based product development, technology transfer and scale-up, and support the science-based justification of critical process parameters (CPPs).

Process-Parameter-Dependent Optical and Structural Properties of ZrO2MgO Mixed-Composite Films Evaporated from the solid Solution

NASA Technical Reports Server (NTRS)

Sahoo, N. K.; Shapiro, A. P.

1998-01-01

The process-parameter-dependent optical and structural properties of ZrO2MgO mixed-composite material have been investigated. Optical properties were derived from spectrophotometric measurements. By use of atomic force microscopy, x-ray diffraction analysis, and energy-dispersive x-ray (EDX) analysis, the surface morphology, grain size distributions, crystallographic phases, and process-dependent material composition of films have been investigated. EDX analysis made evident the correlation between the oxygen enrichment in the films prepared at a high level of oxygen pressure and the very low refractive index. Since oxygen pressure can be dynamically varied during a deposition process, coatings constructed of suitable mixed-composite thin films can benefit from continuous modulation of the index of refraction. A step modulation approach is used to develop various multilayer-equivalent thin-film devices.

Biodegradation of PVP-CMC hydrogel film: a useful food packaging material.

PubMed

Roy, Niladri; Saha, Nabanita; Kitano, Takeshi; Saha, Petr

2012-06-20

Hydrogels can offer new opportunities for the design of efficient packaging materials with desirable properties (i.e. durability, biodegradability and mechanical strength). It is a promising and emerging concept, as most of the biopolymer based hydrogels are supposed to be biodegradable, they can be considered as alternative eco-friendly packaging materials. This article reports about synthetic (polyvinylpyrrolidone (PVP)) and biopolymer (carboxymethyl cellulose (CMC)) based a novel hydrogel film and its nature of biodegradability under controlled environmental condition. The dry hydrogel films were prepared by solution casting method and designated as 'PVP-CMC hydrogel films'. The hydrogel film containing PVP and CMC in a ratio of 20:80 shows best mechanical properties among all the test samples (i.e. 10:90, 20:80, 50:50, 80:20 and 90:10). Thus, PVP-CMC hydrogel film of 20:80 was considered as a useful food packaging material and further experiments were carried out with this particular hydrogel film. Biodegradation of the PVP-CMC hydrogel films were studied in liquid state (Czapec-Dox liquid medium+soil extracts) until 8 weeks. Variation in mechanical, viscoelastic properties and weight loss of the hydrogel films with time provide the direct evidence of biodegradation of the hydrogels. About 38% weight loss was observed within 8 weeks. FTIR spectra of the hydrogel films (before and after biodegradation) show shifts of the peaks and also change in the peak intensities, which refer to the physico-chemical change in the hydrogel structure and SEM views of the hydrogels show how internal structure of the PVP-CMC film changes in the course of biodegradation. Copyright © 2012 Elsevier Ltd. All rights reserved.

Composite material having high thermal conductivity and process for fabricating same

DOEpatents

Colella, N.J.; Davidson, H.L.; Kerns, J.A.; Makowiecki, D.M.

1998-07-21

A process is disclosed for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost. 7 figs.

Composite material having high thermal conductivity and process for fabricating same

DOEpatents

Colella, Nicholas J.; Davidson, Howard L.; Kerns, John A.; Makowiecki, Daniel M.

1998-01-01

A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Using a Film Intervention in Early Addiction Treatment: a Qualitative Analysis of Process.

PubMed

Bjelland, Ingerid Elgesem; Johansen, Ayna; Darnell, Farnad; Brendryen, Håvar

2017-10-01

There is a need for knowledge about how self-help materials can be made useful in treatment for Substance Abuse Disorders (SUD), as a supplement to ongoing treatment, or as independent tools for change. In this study, we explored the use of self-help films in early addiction treatment, taking into account both patient and therapist perspectives, as well as dyadic functions. We explored how active mechanisms might be related to intervention format and implementation context. A secondary aim was to examine the potential mechanisms related to the specific content of the intervention: mindfulness and acceptance psychoeducation. A qualitative exploratory research design, including a general inductive analytic approach, constructivist grounded theory, and source triangulation features, was used to code and analyze interview material. Emerging themes were developed into concepts, and finally an operational model. Participants included 12 patients and 22 therapists, in in-/outpatient addiction clinics, all in urban areas of Norway. The purpose of the design was empirical grounding of developed concepts, to promote different potential user perspectives (patients' and therapists') and obtain process data. The core concept constructed, "Alliance as experiential process," gives a description of the data where patients and therapists accept or reject the film as a result of an experience process conceptualized as alliance formation. The alliance process model reflects the observation that patients constructed alliances autonomously, while therapists built alliances indirectly through their patients' experiences. Use of a self-help film may be a helpful adjunct to face-to-face therapy for patients who create a personally meaningful attachment to the film. Mindfulness/acceptance may offer one basic framework for such connection to take place.

Investigations into the formation of nanocrystalline quantum dot thin films by mist deposition process

NASA Astrophysics Data System (ADS)

Kshirsagar, Aditya

Semiconductor nanocrystalline quantum dots (NQDs) have material properties remarkably different compared to bulk semiconductors with the same material composition. These NQDs have various novel applications in the electronic and photonic industry, such as light emitting diodes (LEDs) and flat-panel displays. In these applications, ultra-thin films of NQDs in the monolayer regime are needed to ensure optimal current transport properties and device efficiency. There is ongoing search to find a suitable method to deposit and pattern such ultra-thin films of quantum dots with few monolayer thicknesses. Several competing approaches are available, each with its pros and cons. This study explores mist deposition as the technique to fill this void. In this study, ultra-thin films of quantum dots are deposited on diverse substrates and are characterized to understand the mechanics of mist deposition. Various applications of blanket deposited and patterned quantum dot films are studied. The results discussed here include atomic force microscopy analysis of the films to study surface morphology, fluorescence microscopy to study light emission and optical microscope images to study patterning techniques. These results demonstrate the ability of mist deposition to form 1-4 monolayers thick, uniform, defect-free patterned films with root mean square (RMS) surface roughness less than 2 nm. LEDs fabricated using mist deposition show a peak luminescence greater than 500 cd/m2 for matched red, yellow and green devices using Alq3 as the electron transport layer, and over 9000 cd/m2 for red devices using ZnO as the electron transport layer, respectively. In addition to the experimental approach to study the process and explore potential applications, simulation and modeling are carried out to understand the various aspects of mist deposition. A mathematical model is presented which discusses the atomization process of the precursor solution, the physics involved during the deposition

Microstructural Evolution of Nanocrystalline Diamond Films Due to CH4/Ar/H2 Plasma Post-Treatment Process.

PubMed

Lin, Sheng-Chang; Yeh, Chien-Jui; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I-Nan

2015-10-07

Plasma post-treatment process was observed to markedly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. TEM examinations reveal that the prime factor which improves the EFE properties of these films is the coalescence of ultrasmall diamond grains (∼5 nm) forming large diamond grains about hundreds of nanometers accompanied by the formation of nanographitic clusters along the grain boundaries due to the plasma post-treatment process. OES studies reveal the presence of large proportion of atomic hydrogen and C2 (or CH) species, which are the main ingredients that altered the granular structure of the UNCD films. In the post-treatment process, the plasma interacts with the diamond films by a diffusion process. The recrystallization of diamond grains started at the surface region of the material, and the interaction zone increased with the post-treatment period. The entire diamond film can be converted into a nanocrystalline granular structure when post-treated for a sufficient length of time.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

Electrochromic materials, devices and process of making

DOEpatents

Richardson, Thomas J.

2003-11-11

Thin films of transition metal compositions formed with magnesium that are metals, alloys, hydrides or mixtures of alloys, metals and/or hydrides exhibit reversible color changes on application of electric current or hydrogen. Thin films of these materials are suitable for optical switching elements, thin film displays, sun roofs, rear-view mirrors and architectural glass.

Phantom evaluation of the effect of film processing on mammographic screen-film combinations.

PubMed

McLean, D; Rickard, M T

1994-08-01

Mammographic image quality should be optimal for diagnosis, and the film contrast can be manipulated by altering development parameters. In this study phantom test objects were radiographed and processed for a given range of developer temperatures and times for four film-screen systems. Radiologists scored the phantom test objects on the resultant films to evaluate the effect on diagnosis of varying image contrast. While for three film-screen systems processing led to appreciable contrast differences, for only one film system did maximum contrast correspond with optimal phantom test object scoring. The inability to show an effect on diagnosis in all cases is possibly due to the variation in radiologist responses found in this study and in normal clinical circumstances. Other technical factors such as changes in film fog, grain and mottle may contribute to the study findings.

Incorporation of nisin in poly (ethylene-co-vinyl acetate) films by melt processing: a study on the antimicrobial properties.

PubMed

Scaffaro, Roberto; Botta, Luigi; Marineo, Sandra; Puglia, Anna Maria

2011-07-01

Both industry and academia have shown a growing interest in materials with antimicrobial properties suitable for food packaging applications. In this study, we prepared and characterized thin films of ethylene-co-vinyl acetate (EVA) copolymer with antimicrobial properties. The films were prepared with a film blowing process by incorporating a nisin preparation as an antimicrobial agent in the melt. Two grades of EVA containing 14 and 28% (wt/wt) vinyl acetate (EVA 14 and EVA 28, respectively) and two commercial formulations of nisin with different nominal activities were used. The effect of the nisin concentration also was evaluated. The films with the highest antimicrobial activity were those formulated with nisin at the highest activity and EVA with the highest content of vinyl acetate. The use of the commercial formulation of nisin with high activity in the EVA films allowed reduction in the amount of nisin needed to provide antimicrobial properties. Consequently, the mechanical properties of these films were only slightly inferior to those of the pure polymers. In contrast, films prepared by incorporating more of the nisin with lower activity had poor mechanical properties. The effect of different processing temperatures used in the preparation of the films on the antimicrobial properties of the films also was evaluated. The materials displayed antimicrobial properties even when they were prepared at temperatures as high as 160 °C, probably because of the very short processing time (60 to 90 s) required for preparation. Copyright ©, International Association for Food Protection

Rapid thermal processing for production of chalcopyrite thin films for solar cells: Design, analysis, and experimental implementation

NASA Astrophysics Data System (ADS)

Lovelett, Robert J.

The direct conversion of solar energy to electricity, or photovoltaic energy conversion, has a number of environmental, social, and economic advantages over conventional electricity generation from fossil fuels. Currently, the most commonly-used material for photovoltaics is crystalline silicon, which is now produced at large scale and silicon-based devices have achieved power conversion efficiencies over 25% However, alternative materials, such as inorganic thin films, offer a number of advantages including the potential for lower manufacturing costs, higher theoretical efficiencies, and better performance in the field. One of these materials is the chalcopyrite Cu(InGa)(SeS) 2, which has demonstrated module efficiencies over 17% and cell efficiencies over 22%. Cu(InGa)(SeS)2 is now in the early stages of commercialization using a precursor reaction process referred to as a "selenization/sulfization" reaction. The precursor reaction process is promising because it has demonstrated high efficiency along with the large area (approximately 1 m2) uniformity that is required for modules. However, some challenges remain that limit the growth of the chalcopyrite solar cell industry including: slow reactions that limit process throughput, a limited understanding of complex reaction kinetics and transport phenomena that affect the through-film composition, and the use of highly toxic H2Se in the reaction process. In this work, I approach each of these challenges. First, to improve process throughput, I designed and implemented a rapid thermal processing (RTP) reactor, whereby the samples are heated by a 1000 W quartz-halogen lamp that is capable of fast temperature ramps and high temperature dwells. With the reactor in place, however, achieving effective temperature control in the thin film material system is complicated by two intrinsic process characteristics: (i) the temperature of the Cu(InGa)(SeS)2 film cannot be measured directly, which leaves the system without

Liquid-Phase Processing of Barium Titanate Thin Films

NASA Astrophysics Data System (ADS)

Harris, David Thomas

Processing of thin films introduces strict limits on the thermal budget due to substrate stability and thermal expansion mismatch stresses. Barium titanate serves as a model system for the difficulty in producing high quality thin films because of sensitivity to stress, scale, and crystal quality. Thermal budget restriction leads to reduced crystal quality, density, and grain growth, depressing ferroelectric and nonlinear dielectric properties. Processing of barium titanate is typically performed at temperatures hundreds of degrees above compatibility with metalized substrates. In particular integration with silicon and other low thermal expansion substrates is desirable for reductions in costs and wider availability of technologies. In bulk metal and ceramic systems, sintering behavior has been encouraged by the addition of a liquid forming second phase, improving kinetics and promoting densification and grain growth at lower temperatures. This approach is also widespread in the multilayer ceramic capacitor industry. However only limited exploration of flux processing with refractory thin films has been performed despite offering improved dielectric properties for barium titanate films at lower temperatures. This dissertation explores physical vapor deposition of barium titanate thin films with addition of liquid forming fluxes. Flux systems studied include BaO-B2O3, Bi2O3-BaB2O 4, BaO-V2O5, CuO-BaO-B2O3, and BaO-B2O3 modified by Al, Si, V, and Li. Additions of BaO-B2O3 leads to densification and an increase in average grain size from 50 nm to over 300 nm after annealing at 900 °C. The ability to tune permittivity of the material improved from 20% to 70%. Development of high quality films enables engineering of ferroelectric phase stability using residual thermal expansion mismatch in polycrystalline films. The observed shifts to TC match thermodynamic calculations, expected strain from the thermal expansion coefficients, as well as x-ray diffract measurements

Process for producing Ti-Cr-Al-O thin film resistors

DOEpatents

Jankowski, Alan F.; Schmid, Anthony P.

2001-01-01

Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Synthesis of ultra-nano-carbon composite materials with extremely high conductivity by plasma post-treatment process of ultrananocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, Chien-Jui; Leou, Keh-Chyang; Manoharan, Divinah

2015-08-24

Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH{sub 4}/N{sub 2} plasma ppt-processed films exhibit high conductivity of σ = 1099 S/cm as well as excellent EFE properties with turn-on field of E{sub 0} = 2.48 V/μm (J{sub e} = 1.0 mA/cm{sup 2} at 6.5 V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.

Super hydrophilic thin film nitinol demonstrates reduced platelet adhesion compared with commercially available endograft materials.

PubMed

Tulloch, Allan W; Chun, Youngjae; Levi, Daniel S; Mohanchandra, Kotekar P; Carman, Gregory P; Lawrence, Peter F; Rigberg, David A

2011-11-01

Thin film nitinol (TFN) is a novel material with which to cover stents for the treatment of a wide range of vascular disease processes. This study aimed to show that TFN, if treated to produce a super hydrophilic surface, significantly reduces platelet adhesion, potentially rendering covered stents more resistant to thrombosis compared to commercially available materials. TFN was fabricated using a sputter deposition process to produce a 5-μ thin film of uniform thickness. TFN then underwent a surface treatment process to create a super hydrophilic layer. Platelet adhesion studies compared surface treated TFN (S-TFN) to untreated TFN, polytetrafluoroethylene, Dacron, and bulk nitinol. In vivo swine studies examined the placement of an S-TFN covered stent in a 3.5 mm diameter external iliac artery. Angiography confirmed placement, and repeat angiography was performed at 2 wk followed by post mortem histopathology. S-TFN significantly reduced platelet adhesion without any evidence of aggregation compared with all materials studied (P < 0.05). Furthermore, in vivo swine studies demonstrated complete patency of the S-TFN covered stent at 2 wk. Post mortem histopathology showed rapid endothelialization of the S-TFN without excessive neointimal hyperplasia. These results demonstrate that S-TFN significantly reduces platelet adhesion and aggregation compared with commercially available endograft materials. Furthermore, the hydrophilic surface may confer thromboresistance in vivo, suggesting that S-TFN is a possible superior material for covering stents. Copyright © 2011 Elsevier Inc. All rights reserved.

Optical and structural properties of Al-doped ZnO thin films by sol gel process.

PubMed

Jun, Min-Chul; Koh, Jung-Hyuk

2013-05-01

Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

Synthetic Reference Materials Based on Polymer Films for the Control of Welding Fumes Composition

NASA Astrophysics Data System (ADS)

Kuznetsova, O. V.; Kuznetsova, A. N.; Begunova, L. A.

2017-04-01

Analysis of the current hygienic situation in the welding production showed that the intensification of welding processes involves the deterioration of air quality, which negatively affects the welders health. Welders are exposed to a variety of metal fumes, including manganese that may elevate the risk for neurological diseases. The control of metals concentration in the air of the working area is difficult due to the lack of reference materials. The creation of reference materials of welding fumes composition is a challenge due to chemical characteristics of their physical properties. Synthetic samples in a form of the polymer film containing powder particles of welding fumes were create. Studies on the selection of the polymer were done. Experiments proved that the qualitative materials of synthetic welding fumes are obtained by using polyvinyl alcohol. The metals concentration in the samples was determined by X-ray fluorescence analysis. The obtained data demonstrates indirectly the uniform distribution of welding fumes powder particles on the polymer film.

Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, C. D.; Shen, N.; Rubenchik, A.

2015-06-30

Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problemmore » by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.« less

Helical instability in film blowing process: Analogy to buckling instability

NASA Astrophysics Data System (ADS)

Lee, Joo Sung; Kwon, Ilyoung; Jung, Hyun Wook; Hyun, Jae Chun

2017-12-01

The film blowing process is one of the most important polymer processing operations, widely used for producing bi-axially oriented film products in a single-step process. Among the instabilities observed in this film blowing process, i.e., draw resonance and helical motion occurring on the inflated film bubble, the helical instability is a unique phenomenon portraying the snake-like undulation motion of the bubble, having the period on the order of few seconds. This helical instability in the film blowing process is commonly found at the process conditions of a high blow-up ratio with too low a freezeline position and/or too high extrusion temperature. In this study, employing an analogy to the buckling instability for falling viscous threads, the compressive force caused by the pressure difference between inside and outside of the film bubble is introduced into the simulation model along with the scaling law derived from the force balance between viscous force and centripetal force of the film bubble. The simulation using this model reveals a close agreement with the experimental results of the film blowing process of polyethylene polymers such as low density polyethylene and linear low density polyethylene.

Thin film materials and devices for resistive temperature sensing applications

NASA Astrophysics Data System (ADS)

Basantani, Hitesh A.

Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

Solution-Processed Cu2Se Nanocrystal Films with Bulk-Like Thermoelectric Performance.

PubMed

Forster, Jason D; Lynch, Jared J; Coates, Nelson E; Liu, Jun; Jang, Hyejin; Zaia, Edmond; Gordon, Madeleine P; Szybowski, Maxime; Sahu, Ayaskanta; Cahill, David G; Urban, Jeffrey J

2017-06-05

Thermoelectric power generation can play a key role in a sustainable energy future by converting waste heat from power plants and other industrial processes into usable electrical power. Current thermoelectric devices, however, require energy intensive manufacturing processes such as alloying and spark plasma sintering. Here, we describe the fabrication of a p-type thermoelectric material, copper selenide (Cu 2 Se), utilizing solution-processing and thermal annealing to produce a thin film that achieves a figure of merit, ZT, which is as high as its traditionally processed counterpart, a value of 0.14 at room temperature. This is the first report of a fully solution-processed nanomaterial achieving performance equivalent to its bulk form and represents a general strategy to reduce the energy required to manufacture advanced energy conversion and harvesting materials.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

PubMed

Zhang, Xue; Lee, Hyeonju; Kwon, Jung-Hyok; Kim, Eui-Jik; Park, Jaehoon

2017-07-31

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Initial Study on Thin Film Preparation of Carbon Nanodots Composites as Luminescence Material

NASA Astrophysics Data System (ADS)

Iskandar, F.; Aimon, A. H.; Akmaluddin, A. R.; Nuryadin, B. W.; Abdullah, M.

2016-08-01

Nowadays, the developments of phosphors materials require elements without noble metals and simple production process. Carbon nanodots (C-dots) are one of phosphor materials with wide range of emission band, and high biocompatibility. In this research thin film carbon nanodots composite have been prepared by spin coating method. Prior deposition, powder carbon nanodots were synthesized from a mixture of commercial urea as the nitrogen sources and citric acid as a carbon source by using hydrothermal and microwave-assisted heating method. The prepared powder was dispersed in transparent epoxy resin and then coated on glass substrate. The photoluminescence result for sample with 0.035 g citric acid exhibited an intense, single, homogeneous and broad spectrum with yellowish emission upon excitation at 365 nm. The Fourier Transform Infrared Spectroscopy (FTIR) result showed the existences of C=C, C-H, C=O, N-H and O-H functional groups which confirmed the quality of the sample. Further, based on UV-Vis measurement, the prepared thin film was highly transparent (transmittance 90%) with estimated film thickness around 764 nm. This result may open an opportunity for optoelectronic devices.

An easily accessible carbon material derived from carbonization of polyacrylonitrile ultrathin films: ambipolar transport properties and application in a CMOS-like inverter.

PubMed

Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Zou, Ye; Di, Chong'an; Xu, Wei; Zhu, Daoben

2014-03-04

Ultrathin carbon films were prepared by carbonization of a solution processed polyacrylonitrile (PAN) film in a moderate temperature range (500-700 °C). The films displayed balanced hole (0.50 cm(2) V(-1) s(-1)) and electron mobilities (0.20 cm(2) V(-1) s(-1)) under ambient conditions. Spectral characterization revealed that the electrical transport is due to the formation of sp(2) hybridized carbon during the carbonization process. A CMOS-like inverter demonstrated the potential application of this material in the area of carbon electronics, considering its processability and low-cost.

Preparation of pentacene thin film deposited using organic material auto-feeding system for the fabrication of organic thin film transistor.

PubMed

Kim, Young Baek; Choi, Bum Ho; Lim, Yong Hwan; Yoo, Ha Na; Lee, Jong Ho; Kim, Jin Hyeok

2011-02-01

In this study, pentacene organic thin film was prepared using newly developed organic material auto-feeding system integrated with linear cell and characterized. The newly developed organic material auto-feeding system consists of 4 major parts: reservoir, micro auto-feeder, vaporizer, and linear cell. The deposition of organic thin film could be precisely controlled by adjusting feeding rate, main tube size, position and size of nozzle. 10 nm thick pentacene thin film prepared on glass substrate exhibited high uniformity of 3.46% which is higher than that of conventional evaporation method using point cell. The continuous deposition without replenishment of organic material can be performed over 144 hours with regulated deposition control. The grain size of pentacene film which affect to mobility of OTFT, was controlled as a function of the temperature.

Solution-processing of chalcogenide materials for device applications

NASA Astrophysics Data System (ADS)

Zha, Yunlai

Chalcogenide glasses are well-known for their desirable optical properties, which have enabled many infrared applications in the fields of photonics, medicine, environmental sensing and security. Conventional deposition methods such as thermal evaporation, chemical vapor deposition, sputtering or pulse laser deposition are efficient for fabricating structures on flat surfaces. However, they have limitations in deposition on curved surfaces, deposition of thick layers and component integration. In these cases, solution-based methods, which involve the dissolution of chalcogenide glasses and processing as a liquid, become a better choice for their flexibility. After proper treatment, the associated structures can have similar optical, chemical and physical properties to the bulk. This thesis presents an in-depth study of solution-processing chalcogenide glasses, starting from the "solution state" to the "film state" and the "structure state". Firstly, chalcogenide dissolution is studied to reveal the mechanisms at molecular level and build a foundation for material processing. Dissolution processes for various chalcogenide solvent pairs are reviewed and compared. Secondly, thermal processing, in the context of high temperature annealing, is explained along with the chemical and physical properties of the annealed films. Another focus is on nanopore formation in propylamine-processed arsenic sulfide films. Pore density changes with respect to annealing temperatures and durations are characterized. Base on a proposed vacancy coalescence theory, we have identified new dissolution strategies and achieved the breakthrough of pore-free film deposition. Thirdly, several solution methods developed along with the associated photonic structures are demonstrated. The first example is "spin-coating and lamination", which produces thick (over 10 mum) chalcogenide structures. Both homogeneous thick chalcogenide structures and heterogeneous layers of different chalcogenide glasses

Novel Ballistic Processing of Sn-0.7Cu Thick Films

NASA Astrophysics Data System (ADS)

Cavero, D.; Stewart, K.; Morsi, K.

2017-01-01

The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

Development and characterization of crosslinked hyaluronic acid polymeric films for use in coating processes.

PubMed

Sgorla, Débora; Almeida, Andreia; Azevedo, Claudia; Bunhak, Ÿlcio Jose; Sarmento, Bruno; Cavalcanti, Osvaldo Albuquerque

2016-09-10

The aim of this work was to develop and characterize new hyaluronic acid-based responsive materials for film coating of solid dosage forms. Crosslinking of hyaluronic acid with trisodium trimetaphosphate was performed under controlled alkaline aqueous environment. The films were produced through casting process by mixing crosslinked or bare biopolymer in aqueous dispersion of ethylcellulose, at different proportions. Films were further characterized regarding morphology by scanning electron microscopy, robustness by permeation to water vapor transmission, and ability to hydrate in simulated gastric and intestinal physiological fluids. The safety and biocompatibility of films were assessed against Caco-2 and HT29-MTX intestinal cells. The permeation to water vapor transmission was favored by increasing hyaluronic acid content in the final formulation. When in simulated gastric fluid, films exhibited lower hydration ability compared to more extensive hydration in simulated intestinal fluids. Simultaneously, in simulated intestinal fluids, films partially lost weight, revealing ability for preventing drug release at gastric pH, but tailoring the release at higher intestinal pH. The physiochemical characterization suggests thermal stability of films and physical interaction between compounds of formulation. Lastly, cytotoxicity tests demonstrated that films and individual components of the formulations, when incubated for 4h, were safe for intestinal cells Overall, these evidences suggest that hyaluronic acid-based responsive films, applied as coating material of oral solid dosage forms, can prevent the premature release of drugs in harsh stomach conditions, but control the release it in gastrointestinal tract distal portion, assuring safety to intestinal mucosa. Copyright © 2016 Elsevier B.V. All rights reserved.

Multi-Stimuli-Responsive Polymer Materials: Particles, Films, and Bulk Gels.

PubMed

Cao, Zi-Quan; Wang, Guo-Jie

2016-06-01

Stimuli-responsive polymers have received tremendous attention from scientists and engineers for several decades due to the wide applications of these smart materials in biotechnology and nanotechnology. Driven by the complex functions of living systems, multi-stimuli-responsive polymer materials have been designed and developed in recent years. Compared with conventional single- or dual-stimuli-based polymer materials, multi-stimuli-responsive polymer materials would be more intriguing since more functions and finer modulations can be achieved through more parameters. This critical review highlights the recent advances in this area and focuses on three types of multi-stimuli-responsive polymer materials, namely, multi-stimuli-responsive particles (micelles, micro/nanogels, vesicles, and hybrid particles), multi-stimuli-responsive films (polymer brushes, layer-by-layer polymer films, and porous membranes), and multi-stimuli-responsive bulk gels (hydrogels, organogels, and metallogels) from recent publications. Various stimuli, such as light, temperature, pH, reduction/oxidation, enzymes, ions, glucose, ultrasound, magnetic fields, mechanical stress, solvent, voltage, and electrochemistry, have been combined to switch the functions of polymers. The polymer design, preparation, and function of multi-stimuli-responsive particles, films, and bulk gels are comprehensively discussed here. © 2016 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a continuous roll-to-roll processing system for mass production of plastic optical film

NASA Astrophysics Data System (ADS)

Chang, Chih-Yuan; Tsai, Meng-Hsun

2015-12-01

This paper reports a highly effective method for the mass production of large-area plastic optical films with a microlens array pattern based on a continuous roll-to-roll film extrusion and roller embossing process. In this study, a thin steel mold with a micro-circular hole array pattern is fabricated by photolithography and a wet chemical etching process. The thin steel mold was then wrapped onto a metal cylinder to form an embossing roller mold. During the roll-to-roll process operation, a thermoplastic raw material (polycarbonate grains) was put into the barrel of the plastic extruder with a flat T-die. Then, the molten polymer film was extruded and immediately pressed against the surface of the embossing roller mold. Under the proper processing conditions, the molten polymer will just partially fill the micro-circular holes of the mold and due to surface tension form a convex lens surface. A continuous plastic optical film with a microlens array pattern was obtained. Experiments are carried out to investigate the effect of plastic microlens formation on the roll-to-roll process. Finally, the geometrical and optical properties of the fabricated plastic optical film were measured and proved satisfactory. This technique shows great potential for the mass production of large-area plastic optical films with a microlens array pattern.

Sensor Functionality of Conducting Polyaniline-Metal Oxide (TiO2/SnO2) Hybrid Materials Films toward Benzene and Toluene Vapors at Room Temperature

NASA Astrophysics Data System (ADS)

Subramanian, E.; Santhanamari, P.; Murugan, C.

2018-05-01

Polyaniline-metal oxide (TiO2/SnO2) organic-inorganic hybrid materials films were fabricated in situ on a printed circuit board (PCB) via drop coating technique. The mixture of aniline and metal oxide (TiO2/SnO2) dispersed in ethanol was applied along with an oxidant for the coating process. The formed material films were characterized by Fourier transform infra-red spectroscopy, x-ray diffraction and scanning electron microscopy techniques. The sensor functionality of the prepared films on PCB was investigated individually for the detection of benzene or toluene vapor at room temperature. The promptness of sensor response to analyte vapor and its recovery to air, as well as the concentration-dependent sensor functionality of the hybrid material films were investigated. The film form of hybrid materials has shown much improved sensor efficiency even at ambient air condition compared to the pellet form of the polyaniline-SnO2 hybrid material reported earlier, which sensed the same analytes only in nitrogen atmosphere.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242

Development of antioxidant packaging material by applying corn-zein to LLDPE film in combination with phenolic compounds.

PubMed

Park, Hye-Yeon; Kim, Sung-Jin; Kim, Ki Myong; You, Young-Sun; Kim, So Yeon; Han, Jaejoon

2012-10-01

Functional active packaging materials were successfully developed by incorporating antioxidant agents into corn-zein-laminated linear low-density polyethylene (LLDPE) film. The minimum effective concentrations of the active compounds (for example, thymol, carvacrol, eugenol) were determined and these compounds were then laminated into LLDPE films to develop corn-zein-laminated films with antioxidant agents. The release rate of antioxidant agents in gas and liquid media were determined along with the mechanical and water barrier properties of the films containing these compounds. Tensile strength and percentage elongation at break were reduced in the corn-zein-laminated LLDPE films when compared to typical LLDPE film. Furthermore, the ability of the corn-zein-laminated films to repel moisture decreased by approximately 12.2%, but was improved by incorporating hydrophobic antioxidant compounds in the corn-zein layer. Examination of release kinetics in the gas and liquid phases verified that antioxidants were effectively released from the films and inhibited oxidation during testing. Finally, the films were used for fresh ground beef packaging, and effectively inhibited lipid oxidation and had a positive effect on the color stability of beef patties during storage. These results indicate that the developed antioxidant films are a novel active packaging material that can be effectively implemented by the food industry to improve the quality and safety of foods. Zein protein, a by-product of corn processing industry, was laminated into plastic films in combination with natural phenolic compounds to develop antioxidant packaging films. The films demonstrated their efficient release patterns of antioxidant compounds, which are suitable for packaging applications and food protection. © 2012 Institute of Food Technologists®

Flexural impact force absorption of mouthguard materials using film sensor system.

PubMed

Reza, Fazal; Churei, Hiroshi; Takahashi, Hidekazu; Iwasaki, Naohiko; Ueno, Toshiaki

2014-06-01

Several methods have been used to measure the impact force absorption capacities of mouthguard materials; however, the relationships among these measurement systems have not been clearly determined. The purpose of the present study was to evaluate the impact force-absorbing capability of materials using a drop-ball system with film sensors and load cells to clarify the relationship between these two sensor systems. Disk-shaped specimens (1, 2, and 3 mm thick) were prepared using three commercial thermoplastic mouthguard materials (Bioplast, Impact Guard, MG 21) and one experimental mouthguard material [mixture of Poly (ethyl methacrylate)]. Impact force was applied by letting a stainless steel ball drop free-fall onto the specimens and then measuring the impact load under each specimen using a film sensor system and a load cell sensor system. The total load measured with the film sensor system decreased with an increase in mouthguard thickness, while almost none of the transmitted impact forces measured with the load cell system were statistically different. The film sensor system was considered to be superior to the load cell system because the maximum stress and stress area could be determined. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Poly(vinyl acetate)/clay nanocomposite materials for organic thin film transistor application.

PubMed

Park, B J; Sung, J H; Park, J H; Choi, J S; Choi, H J

2008-05-01

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

Solution-Processed Cu 2Se Nanocrystal Films with Bulk-Like Thermoelectric Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forster, Jason D.; Lynch, Jared J.; Coates, Nelson E.

Thermoelectric power generation can play a key role in a sustainable energy future by converting waste heat from power plants and other industrial processes into usable electrical power. Current thermoelectric devices, however, require energy intensive manufacturing processes such as alloying and spark plasma sintering. Here, we describe the fabrication of a p-type thermoelectric material, copper selenide (Cu 2 Se), utilizing solution-processing and thermal annealing to produce a thin film that achieves a figure of merit, ZT, which is as high as its traditionally processed counterpart, a value of 0.14 at room temperature. This is the first report of amore » fully solution-processed nanomaterial achieving performance equivalent to its bulk form and represents a general strategy to reduce the energy required to manufacture advanced energy conversion and harvesting materials.« less

Solution-Processed Cu 2Se Nanocrystal Films with Bulk-Like Thermoelectric Performance

DOE PAGES

Forster, Jason D.; Lynch, Jared J.; Coates, Nelson E.; ...

2017-06-05

Thermoelectric power generation can play a key role in a sustainable energy future by converting waste heat from power plants and other industrial processes into usable electrical power. Current thermoelectric devices, however, require energy intensive manufacturing processes such as alloying and spark plasma sintering. Here, we describe the fabrication of a p-type thermoelectric material, copper selenide (Cu 2 Se), utilizing solution-processing and thermal annealing to produce a thin film that achieves a figure of merit, ZT, which is as high as its traditionally processed counterpart, a value of 0.14 at room temperature. This is the first report of amore » fully solution-processed nanomaterial achieving performance equivalent to its bulk form and represents a general strategy to reduce the energy required to manufacture advanced energy conversion and harvesting materials.« less

Influence of film structure on the dewetting kinetics of thin polymer films in the solvent annealing process.

PubMed

Zhang, Huanhuan; Xu, Lin; Lai, Yuqing; Shi, Tongfei

2016-06-28

On a non-wetting solid substrate, the solvent annealing process of a thin polymer film includes the swelling process and the dewetting process. Owing to difficulties in the in situ analysis of the two processes simultaneously, a quantitative study on the solvent annealing process of thin polymer films on the non-wetting solid substrate is extremely rare. In this paper, we design an experimental method by combining spectroscopic ellipsometry with optical microscopy to achieve the simultaneous in situ study. Using this method, we investigate the influence of the structure of swollen film on its dewetting kinetics during the solvent annealing process. The results show that for a thin PS film with low Mw (Mw = 4.1 kg mol(-1)), acetone molecules can form an ultrathin enriched layer between the PS film and the solid substrate during the swelling process. The presence of the acetone enriched layer accounts for the exponential kinetic behavior in the case of a thin PS film with low Mw. However, the acetone enriched layer is not observed in the case of a thin PS film with high Mw (Mw = 400 kg mol(-1)) and the slippage effect of polymer chains is valid during the dewetting process.

Apollo-Soyuz test project photographic film processing and sensitometric summary

NASA Technical Reports Server (NTRS)

Lockwood, H. E.

1975-01-01

The Photographic Technology Division at the NASA Lyndon B. Johnson Space Center processed original photographic films exposed in flight during the Apollo Soyuz Test Project (ASTP). Integrated with processing of the original films were strict sensitometric controls and certification procedures established prior to the flight. Information relative to the processing of the 54 rolls of original ASTP flight film and sensitometric data pertinent to each of these rolls of film is presented.

The origin of the residual conductivity of GaN films on ferroelectric materials

NASA Astrophysics Data System (ADS)

Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

2009-08-01

In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

Enhancement of efficiency of storage and processing of food raw materials using radiation technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gracheva, A. Yu.; Zav’yalov, M. A.; Ilyukhina, N. V.

The work is dedicated to improvement of efficiency of storage and processing of food raw materials using radiation technologies. International practice of radiation processing of food raw materials is presented and an increase in the consumption of irradiated food products is shown. The prospects of using radiation technologies for the processing of food products in Russia are discussed. The results of studies of radiation effects on various food products and packaging film by γ radiation and accelerated electrons are presented.

Do Films Make You Learn? Inference Processes in Expository Film Comprehension

ERIC Educational Resources Information Center

Tibus, Maike; Heier, Anke; Schwan, Stephan

2013-01-01

The present article examines how suitable expository films are for learning. This question was motivated by the assumption that films are processed in a superficial manner. However, previous research has been dominated by the analyses of outcome measures and has never taken a look at online measures so that no clear conclusions have been drawn.…

Microwave plasma assisted supersonic gas jet deposition of thin film materials

DOEpatents

Schmitt, III, Jerome J.; Halpern, Bret L.

1993-01-01

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Microwave plasma assisted supersonic gas jet deposition of thin film materials

DOEpatents

Schmitt, J.J. III; Halpern, B.L.

1993-10-26

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Fabrication of nanostructured metal oxide films with supercritical carbon dioxide: Processing and applications

NASA Astrophysics Data System (ADS)

You, Eunyoung

Nanostructured metal oxide films have many applications in catalysis, microelectronics, microfluidics, photovoltaics and other fields. Since the performance of a device depends greatly on the structure of the material, the development of methodologies that enable prescriptive control of morphology are of great interest. The focus of this work is to control the structure and properties of the nanostructured metal oxide films using novel synthetic schemes in supercritical fluids and to use those films as key building components in alternative energy applications. A supercritical fluid is a substance at a temperature and pressure above its critical point. It typically exhibits gas-like transport properties and liquid-like densities. Supercritical fluid deposition (SFD) utilizes these properties of supercritical CO2 (scCO2) to deposit chemically pure metal, oxides and alloys of metal films. SFD is a chemical vapor deposition (CVD)-like process in the sense that it uses similar metal organic precursors and deposits films at elevated temperatures. Instead of vaporizing or subliming the precursors, they are dissolved in supercritical fluids. SFD has typically shown to exhibit higher precursor concentrations, lower deposition temperatures, conformal deposition of films on high aspect ratio features as compared to CVD. In2 O3, ZnO and SnO2 are attractive materials because they are used in transparent conductors. SFD of these materials were studied and In2 O3 deposition kinetics using tris(2,2,6,6-tetramethyl-3,5-heptanedionato) In (III) as precursor were determined. Growth rate dependence on the deposition temperature and the precursor concentrations were studied and the physicochemical and optical properties of In2 O3 films were characterized. Metal oxide nanochannels that can potentially be used for microfluidics have been fabricated by sequentially performing nanoimprint lithography (NIL) and SFD. NIL was used to pattern photoresist grating on substrates and SFD of TiO2

Radiopacity of endodontic materials on film and a digital sensor.

PubMed

Rasimick, Brian J; Shah, Rinal P; Musikant, Barry Lee; Deutsch, Allan S

2007-09-01

The purpose of this study was to compare the radiographic appearance of 12 endodontic materials as visualized on either Kodak Ultra-speed D speed film (Eastman Kodak Company, Rochester, NY) or a Gendex eHD digital sensor (Gendex Dental Systems, Milan, Italy). Ten discs of each material were radiographed alongside an aluminum alloy 1100 (Alcoa, Pittsburgh, PA) stepwedge that was used for reference. For every radiograph, the average grayscale value of the material was converted into absorbance notation and compared with that of the reference stepwedge in order to determine the equivalent radiopacity in terms of millimeters of Al 1100 per millimeter of material. Two-way repeated-measures analysis of variance testing detected significant differences with respect to imaging system, material, and the interaction of the two factors (p < 0.001). The difference in a material's radiopacity as measured on the digital sensor compared with film was greater than 10% for 4 of the 12 materials and over 40% for InnoEndo (Heraus Kulzer, Armonk, NY). It was speculated that barium fillers cause this effect.

Fabrication of advanced electrochemical energy materials using sol-gel processing techniques

NASA Technical Reports Server (NTRS)

Chu, C. T.; Chu, Jay; Zheng, Haixing

1995-01-01

Advanced materials play an important role in electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. They are being used as both electrodes and electrolytes. Sol-gel processing is a versatile solution technique used in fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. The application of sol-gel processing in the fabrication of advanced electrochemical energy materials will be presented. The potentials of sol-gel derived materials for electrochemical energy applications will be discussed along with some examples of successful applications. Sol-gel derived metal oxide electrode materials such as V2O5 cathodes have been demonstrated in solid-slate thin film batteries; solid electrolytes materials such as beta-alumina for advanced secondary batteries had been prepared by the sol-gel technique long time ago; and high surface area transition metal compounds for capacitive energy storage applications can also be synthesized with this method.

Post-processing optimization of electrospun submicron poly(3-hydroxybutyrate) fibers to obtain continuous films of interest in food packaging applications.

PubMed

Cherpinski, Adriane; Torres-Giner, Sergio; Cabedo, Luis; Lagaron, Jose M

2017-10-01

Polyhydroxyalkanoates (PHAs) are one of the most researched family of biodegradable polymers based on renewable materials due to their thermoplastic nature and moisture resistance. The present study was targeted to investigate the preparation and characterization of poly(3-hydroxybutyrate) (PHB) films obtained through the electrospinning technique. To convert them into continuous films and then to increase their application interest in packaging, the electrospun fiber mats were subsequently post-processed by different physical treatments. Thus, the effect of annealing time and cooling method on morphology, molecular order, thermal, optical, mechanical, and barrier properties of the electrospun submicron PHB fibers was studied. Annealing at 160°C, well below the homopolyester melting point, was found to be the minimum temperature at which homogeneous transparent films were produced. The film samples that were cooled slowly after annealing showed the lowest permeability to oxygen, water vapor, and limonene. The optimally post-processed electrospun PHB fibers exhibited similar rigidity to conventional compression-molded PHA films, but with enhanced elongation at break and toughness. Films made by this electrospinning technique have many potential applications, such as in the design of barrier layers, adhesive interlayers, and coatings for fiber- and plastic-based food packaging materials.

Engineering on-chip nanoporous gold material libraries via precision photothermal treatment [Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-ship Material Libraries

DOE PAGES

Chapman, Christopher A. R.; Wang, Ling; Biener, Juergen; ...

2016-01-01

Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problemmore » by providing a means to apply energy with high spatial and temporal resolution. In our present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.« less

Engineering on-chip nanoporous gold material libraries via precision photothermal treatment [Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-ship Material Libraries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chapman, Christopher A. R.; Wang, Ling; Biener, Juergen

Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problemmore » by providing a means to apply energy with high spatial and temporal resolution. In our present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.« less

Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

NASA Astrophysics Data System (ADS)

Abdulagatov, Aziz Ilmutdinovich

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

Gas permeability measurements for film envelope materials

DOEpatents

Ludtka, Gerard M.; Kollie, Thomas G.; Watkin, David C.; Walton, David G.

1998-01-01

Method and apparatus for measuring the permeability of polymer film materials such as used in super-insulation powder-filled evacuated panels (PEPs) reduce the time required for testing from several years to weeks or months. The method involves substitution of a solid non-outgassing body having a free volume of between 0% and 25% of its total volume for the usual powder in the PEP to control the free volume of the "body-filled panel". Pressure versus time data for the test piece permit extrapolation to obtain long term performance of the candidate materials.

Scanning tunneling microscopy studies of diamond films and optoelectronic materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1993-01-01

In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

Symposium Q: Magnetic Thin Films, Heterostructures, and Device Materials

DTIC Science & Technology

2007-05-22

results in the formation of sodium carboxylate groups, that electronics, also known as magnetoelectronics or spintronics. Mn promoted the adsorption of...Q8.29 Magnetic Properties of Microcrystalline Si Thin films and Nickel Silicide Nanowires. Joondong Kim’, Seongjin Jang 2 , Bi-Ching Shih 2 , Hao...Buffalo, New York. The silicides , such as NiSi 2 and CoSi2 , have been attractive materials to crystallize Si and grow an epitaxial Si film with a small

Method of forming particulate materials for thin-film solar cells

DOEpatents

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

2018-03-01

We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuzanyan, A S; Kuzanyan, A A; Petrosyan, V A

The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuOmore » were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than ±2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency. (laser deposition of thin films)« less

Investigation of test methods, material properties and processes for solar cell encapsulants

NASA Technical Reports Server (NTRS)

Willis, P. B.; Baum, B.

1983-01-01

The goal of the program is to identify, test, evaluate and recommend encapsulation materials and processes for the fabrication of cost-effective and long life solar modules. Of the $18 (1948 $) per square meter allocated for the encapsulation components approximately 50% of the cost ($9/sq m) may be taken by the load bearing component. Due to the proportionally high cost of this element, lower costing materials were investigated. Wood based products were found to be the lowest costing structural materials for module construction, however, they require protection from rainwater and humidity in order to acquire dimensional stability. The cost of a wood product based substrate must, therefore, include raw material costs plus the cost of additional processing to impart hygroscopic inertness. This protection is provided by a two step, or split process in which a flexible laminate containing the cell string is prepared, first in a vacuum process and then adhesively attached with a back cover film to the hardboard in a subsequent step.

Modeling and simulation of the deposition/relaxation processes of polycrystalline diatomic structures of metallic nitride films

NASA Astrophysics Data System (ADS)

García, M. F.; Restrepo-Parra, E.; Riaño-Rojas, J. C.

2015-05-01

This work develops a model that mimics the growth of diatomic, polycrystalline thin films by artificially splitting the growth into deposition and relaxation processes including two stages: (1) a grain-based stochastic method (grains orientation randomly chosen) is considered and by means of the Kinetic Monte Carlo method employing a non-standard version, known as Constant Time Stepping, the deposition is simulated. The adsorption of adatoms is accepted or rejected depending on the neighborhood conditions; furthermore, the desorption process is not included in the simulation and (2) the Monte Carlo method combined with the metropolis algorithm is used to simulate the diffusion. The model was developed by accounting for parameters that determine the morphology of the film, such as the growth temperature, the interacting atomic species, the binding energy and the material crystal structure. The modeled samples exhibited an FCC structure with grain formation with orientations in the family planes of < 111 >, < 200 > and < 220 >. The grain size and film roughness were analyzed. By construction, the grain size decreased, and the roughness increased, as the growth temperature increased. Although, during the growth process of real materials, the deposition and relaxation occurs simultaneously, this method may perhaps be valid to build realistic polycrystalline samples.

Space processing applications of ion beam technology. [surface finishing, welding, milling and film deposition

NASA Technical Reports Server (NTRS)

Grodzka, P. G.

1977-01-01

Ion thruster engines for spacecraft propulsion can serve as ion beam sources for potential space processing applications. The advantages of space vacuum environments and the possible gravity effects on thruster ion beam materials operations such as thin film growth, ion milling, and surface texturing were investigated. The direct gravity effect on sputter deposition and vapor deposition processes are discussed as well as techniques for cold and warm welding.

Thin film thermocouples for thermoelectric characterization of nanostructured materials

NASA Astrophysics Data System (ADS)

Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

2011-03-01

The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, Boyd W.; Paulikas, Arvydas; Balachandran, Uthamalingam; Zhong, Wei

1999-01-01

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

1999-02-09

A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer.

PubMed

Singh, Mandeep; Palazzo, Gerardo; Romanazzi, Giuseppe; Suranna, Gian Paolo; Ditaranto, Nicoletta; Di Franco, Cinzia; Santacroce, Maria Vittoria; Mulla, Mohammad Yusuf; Magliulo, Maria; Manoli, Kyriaki; Torsi, Luisa

2014-01-01

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na(+) doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in "transient" implantable systems.

Dual ion beam processed diamondlike films for industrial applications

NASA Technical Reports Server (NTRS)

Mirtich, M. J.; Kussmaul, M. T.; Banks, B. A.; Sovey, J. S.

1991-01-01

Single and dual beam ion source systems are used to generate amorphous diamondlike carbon (DLC) films, which were evaluated for a variety of applications including protective coatings on transmitting materials, power electronics as insulated gates and corrosion resistant barriers. A list of the desirable properties of DLC films along with potential applications are presented.

The Constitutive Modeling of Thin Films with Randon Material Wrinkles

NASA Technical Reports Server (NTRS)

Murphey, Thomas W.; Mikulas, Martin M.

2001-01-01

Material wrinkles drastically alter the structural constitutive properties of thin films. Normally linear elastic materials, when wrinkled, become highly nonlinear and initially inelastic. Stiffness' reduced by 99% and negative Poisson's ratios are typically observed. This paper presents an effective continuum constitutive model for the elastic effects of material wrinkles in thin films. The model considers general two-dimensional stress and strain states (simultaneous bi-axial and shear stress/strain) and neglects out of plane bending. The constitutive model is derived from a traditional mechanics analysis of an idealized physical model of random material wrinkles. Model parameters are the directly measurable wrinkle characteristics of amplitude and wavelength. For these reasons, the equations are mechanistic and deterministic. The model is compared with bi-axial tensile test data for wrinkled Kaptong(Registered Trademark) HN and is shown to deterministically predict strain as a function of stress with an average RMS error of 22%. On average, fitting the model to test data yields an RMS error of 1.2%

Visualization of nanosecond laser-induced dewetting, ablation and crystallization processes in thin silicon films

NASA Astrophysics Data System (ADS)

Qi, Dongfeng; Zhang, Zifeng; Yu, Xiaohan; Zhang, Yawen

2018-06-01

In the present work, nanosecond pulsed laser crystallization, dewetting and ablation of thin amorphous silicon films are investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 7 ns temporal width are irradiated on silicon film. Below the dewetting threshold, crystallization process happens after 400 ns laser irradiation in the spot central region. With the increasing of laser fluence, it is observed that the dewetting process does not conclude until 300 ns after the laser irradiation, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to solidification of transported matter at about 500 ns following the laser pulse exposure.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

A Scale-up Approach for Film Coating Process Based on Surface Roughness as the Critical Quality Attribute.

PubMed

Yoshino, Hiroyuki; Hara, Yuko; Dohi, Masafumi; Yamashita, Kazunari; Hakomori, Tadashi; Kimura, Shin-Ichiro; Iwao, Yasunori; Itai, Shigeru

2018-04-01

Scale-up approaches for film coating process have been established for each type of film coating equipment from thermodynamic and mechanical analyses for several decades. The objective of the present study was to establish a versatile scale-up approach for film coating process applicable to commercial production that is based on critical quality attribute (CQA) using the Quality by Design (QbD) approach and is independent of the equipment used. Experiments on a pilot scale using the Design of Experiment (DoE) approach were performed to find a suitable CQA from surface roughness, contact angle, color difference, and coating film properties by terahertz spectroscopy. Surface roughness was determined to be a suitable CQA from a quantitative appearance evaluation. When surface roughness was fixed as the CQA, the water content of the film-coated tablets was determined to be the critical material attribute (CMA), a parameter that does not depend on scale or equipment. Finally, to verify the scale-up approach determined from the pilot scale, experiments on a commercial scale were performed. The good correlation between the surface roughness (CQA) and the water content (CMA) identified at the pilot scale was also retained at the commercial scale, indicating that our proposed method should be useful as a scale-up approach for film coating process.

Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

DTIC Science & Technology

1991-01-01

scanning, wafer curvature technique to study the kinetics of crystallization of amorphous silicon. When a thin film of amorphous silicon crystallizes...the film and the kinetics of the crystallization process. We find the tensile stress in the film to increase by about 500 MPa when crystallization...occurs. This is a very large stress that could have significance for device processing and applications. By measuring the kinetics of this stress change

Gas permeability measurements for film envelope materials

DOEpatents

Ludtka, G.M.; Kollie, T.G.; Watkin, D.C.; Walton, D.G.

1998-05-12

Method and apparatus for measuring the permeability of polymer film materials such as used in super-insulation powder-filled evacuated panels (PEPs) reduce the time required for testing from several years to weeks or months. The method involves substitution of a solid non-outgassing body having a free volume of between 0% and 25% of its total volume for the usual powder in the PEP to control the free volume of the ``body-filled panel.`` Pressure versus time data for the test piece permit extrapolation to obtain long term performance of the candidate materials. 4 figs.

Utilizing stretch-tunable thermochromic elastomeric opal films as novel reversible switchable photonic materials.

PubMed

Schäfer, Christian G; Lederle, Christina; Zentel, Kristina; Stühn, Bernd; Gallei, Markus

2014-11-01

In this work, the preparation of highly thermoresponsive and fully reversible stretch-tunable elastomeric opal films featuring switchable structural colors is reported. Novel particle architectures based on poly(diethylene glycol methylether methacrylate-co-ethyl acrylate) (PDEGMEMA-co-PEA) as shell polymer are synthesized via seeded and stepwise emulsion polymerization protocols. The use of DEGMEMA as comonomer and herein established synthetic strategies leads to monodisperse soft shell particles, which can be directly processed to opal films by using the feasible melt-shear organization technique. Subsequent UV crosslinking strategies open access to mechanically stable and homogeneous elastomeric opal films. The structural colors of the opal films feature mechano- and thermoresponsiveness, which is found to be fully reversible. Optical characterization shows that the combination of both stimuli provokes a photonic bandgap shift of more than 50 nm from 560 nm in the stretched state to 611 nm in the fully swollen state. In addition, versatile colorful patterns onto the colloidal crystal structure are produced by spatial UV-induced crosslinking by using a photomask. This facile approach enables the generation of spatially cross-linked switchable opal films with fascinating optical properties. Herein described strategies for the preparation of PDEGMEMA-containing colloidal architectures, application of the melt-shear ordering technique, and patterned crosslinking of the final opal films open access to novel stimuli-responsive colloidal crystal films, which are expected to be promising materials in the field of security and sensing applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors.

PubMed

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-10-19

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

NASA Astrophysics Data System (ADS)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Research progress of VO2 thin film as laser protecting material

NASA Astrophysics Data System (ADS)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

Effect of different film packaging on microbial growth in minimally processed cactus pear (Opuntia ficus-indica).

PubMed

Palma, A; Mangia, N P; Fadda, A; Barberis, A; Schirra, M; D'Aquino, S

2013-01-01

Microorganisms are natural contaminants of fresh produce and minimally processed products, and contamination arises from a number of sources, including the environment, postharvest handling and processing. Fresh-cut products are particularly susceptible to microbial contaminations because of the changes occurring in the tissues during processing. In package gas composition of modified atmosphere packaging (MAP) in combination with low storage temperatures besides reducing physiological activity of packaged produce, can also delay pathogen growth. Present study investigated on the effect of MAPs, achieved with different plastic films, on microbial growth of minimally processed cactus pear (Opuntio ficus-indica) fruit. Five different plastic materials were used for packaging the manually peeled fruit. That is: a) polypropylene film (Termoplast MY 40 micron thickness, O2 transmission rate 300 cc/m2/24h); b) polyethylene film (Bolphane BHE, 11 micron thickness, O2 transmission rate 19000 cc/m2/24h); c) polypropylene laser-perforated films (Mach Packaging) with 8, 16 or 32 100-micron holes. Total aerobic psychrophilic, mesophilic microorganisms, Enterobacteriaceae, yeast, mould populations and in-package CO2, O2 and C2H4 were determined at each storage time. Different final gas compositions, ranging from 7.8 KPa to 17.1 KPa O2, and 12.7 KPa to 2.6 KPa CO2, were achieved with MY and micro perforated films, respectively. Differences were detected in the mesophilic, Enterobacteriaceae and yeast loads, while no difference was detected in psychrophilic microorganisms. At the end of storage, microbial load in fruits sealed with MY film was significantly lower than in those sealed with BHE and micro perforated films. Furthermore, fruits packed with micro-perforated films showed the highest microbial load. This occurrence may in part be related to in-package gas composition and in part to a continuous contamination of microorganisms through micro-holes.

Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm2/Vs.

PubMed

Smith, Jeremy; Zhang, Weimin; Sougrat, Rachid; Zhao, Kui; Li, Ruipeng; Cha, Dongkyu; Amassian, Aram; Heeney, Martin; McCulloch, Iain; Anthopoulos, Thomas D

2012-05-08

Using phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm(2) /Vs, current on/off ratio ≥10(6) and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ablation of film stacks in solar cell fabrication processes

DOEpatents

Harley, Gabriel; Kim, Taeseok; Cousins, Peter John

2013-04-02

A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.

PubMed

Banger, Kulbinder K; Peterson, Rebecca L; Mori, Kiyotaka; Yamashita, Yoshihisa; Leedham, Timothy; Sirringhaus, Henning

2014-01-28

Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm 2 V -1 s -1 . We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm 2 V -1 s -1 ) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

PubMed Central

2013-01-01

Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

A plasmaless, photochemical etch process for porous organosilicate glass films

NASA Astrophysics Data System (ADS)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

New infrared-sensitive photopolymer materials for information storage and processing

NASA Astrophysics Data System (ADS)

Nagtegaele, Patrice; Galstian, Tigran V.

2001-11-01

In response to the increasing demand of information systems, we need new materials with high performance for storage and processing applications. Available on the market optical storage materials present very useful characteristics but are still limited in the visible spectrum and are expansive. Recently, we have developed holographic polymer dispersed liquid crystal (H-PDLC) materials sensitive in the near infrared region (800 nm to 850 nm). These compounds are based on acrylate monomers and different liquid crystals (LC) and allow highly efficient in-situ recording of holographic optical elements using infra red lasers. Diffraction efficiency above 95% is demonstrated. Photosensitivity of the material, its dark ­development and photochemical stability of recorded gratings are investigated. The angular and spectral selectivities of gratings, recorded in these films are examined for recovering the refractive index modulation profile.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

PubMed Central

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-01-01

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites. PMID:28773973

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Laser Processing of Carbon Nanotube Transparent Conducting Films

NASA Astrophysics Data System (ADS)

Mann, Andrew

Transparent conducting films, or TCFs, are 2D electrical conductors with the ability to transmit light. Because of this, they are used in many popular electronics including smart phones, tablets, solar panels, and televisions. The most common material used as a TCF is indium tin oxide, or ITO. Although ITO has great electrical and optical characteristics, it is expensive, brittle, and difficult to pattern. These limitations have led researchers toward other materials for the next generation of displays and touch panels. The most promising material for next generation TCFs is carbon nanotubes, or CNTs. CNTs are cylindrical tubes of carbon no more than a few atoms thick. They have different electrical and optical properties depending on their atomic structure, and are extremely strong. As an electrode, they conduct electricity through an array of randomly dispersed tubes. The array is highly transparent because of gaps between the tubes, and size and optical properties of the CNTs. Many research groups have tried making CNT TCFs with opto-electric properties similar to ITO but have difficultly achieving high conductivity. This is partly attributed to impurities from fabrication and a mix of different tube types, but is mainly caused by low junction conductivity. In functionalized nanotubes, junction conductivity is impaired by covalently bonded molecules added to the sidewalls of the tubes. The addition of this molecule, known as functionalization, is designed to facilitate CNT dispersion in a solvent by adding properties of the molecule to the CNTs. While necessary for a good solution, functionalization decreases the conductivity in the CNT array by creating defects in the tube's structures and preventing direct inter-carbon bonding. This research investigates removing the functional coating (after tube deposition) by laser processing. Laser light is able to preferentially heat the CNTs because of their optical and electrical properties. Through local conduction

Synthesis, integration, and characterization of metal oxide films as alternative gate dielectric materials

NASA Astrophysics Data System (ADS)

Lin, You-Sheng

ZrO2 and HfO2 were investigated in this study to replace SiO2 as the potential gate dielectric materials in metal-oxide-semiconductor field effect transistors. ZrO2 and HfO2 films were deposited on p-type Si (100) wafers by an atomic layer chemical vapor deposition (ALCVD) process using zirconium (IV) t-butoxide and hafnium (IV) t-butoxide as the metal precursors, respectively. Oxygen was used alternatively with these metal alkoxide precursors into the reactor with purging and evacuation in between. The as-deposited ZrO2 and HfO2 films were stoichiometric and uniform based on X-ray photoemission spectroscopy and ellipsometry measurements. X-ray diffraction analysis indicated that the deposited films were amorphous, however, the high-resolution transmission electron microscopy showed an interfacial layer formation on the silicon substrate. Time-of-flight secondary ion mass spectrometry and medium energy ion scattering analysis showed significant intermixing between metal oxides and Si, indicating the formation of metal silicates, which were confirmed by their chemical etching resistance in HF solutions. The thermal stability of ZrO2 and HfO2 thin films on silicon was examined by monitoring their decomposition temperatures in ultra-high vacuum, using in-situ synchrotron radiation ultra-violet photoemission spectroscopy. The as-deposited ZrO2 and HfO2 thin films were thermally stable up to 880°C and 950°C in vacuum, respectively. The highest achieveable dielectric constants of as-deposited ZrO 2 and HfO2 were 21 and 24, respectively, which were slightly lower than the reported dielectric constants of bulk ZrO2 and HfO 2. These slight reductions in dielectric constants were attributed to the formation of the interfacial metal silicate layers. Very small hysteresis and interface state density were observed for both metal oxide films. Their leakage currents were a few orders of magnitude lower than that of SiO 2 at the same equivalent oxide thickness. NMOSFETs were

'Beautiful' unconventional synthesis and processing technologies of superconductors and some other materials.

PubMed

Badica, Petre; Crisan, Adrian; Aldica, Gheorghe; Endo, Kazuhiro; Borodianska, Hanna; Togano, Kazumasa; Awaji, Satoshi; Watanabe, Kazuo; Sakka, Yoshio; Vasylkiv, Oleg

2011-02-01

Superconducting materials have contributed significantly to the development of modern materials science and engineering. Specific technological solutions for their synthesis and processing helped in understanding the principles and approaches to the design, fabrication and application of many other materials. In this review, we explore the bidirectional relationship between the general and particular synthesis concepts. The analysis is mostly based on our studies where some unconventional technologies were applied to different superconductors and some other materials. These technologies include spray-frozen freeze-drying, fast pyrolysis, field-assisted sintering (or spark plasma sintering), nanoblasting, processing in high magnetic fields, methods of control of supersaturation and migration during film growth, and mechanical treatments of composite wires. The analysis provides future research directions and some key elements to define the concept of 'beautiful' technology in materials science. It also reconfirms the key position and importance of superconductors in the development of new materials and unconventional synthesis approaches.

Mechanical and Barrier Properties of Semi Refined Kappa Carrageenan-based Composite Edible Film and Its Application on Minimally Processed Chicken Breast Fillet

NASA Astrophysics Data System (ADS)

Praseptiangga, D.; Maimuni, B. H.; Manuhara, G. J.; Muhammad, D. R. A.

2018-03-01

Kappa-carrageenan (KC) is one of the most interesting biopolymers that is composed of a linear chain of sulfated galactans and extracted from red seaweed, Kappaphycus alvarezii. It shows good potential for development as a source of biodegradable or edible films. However, KC films do not have good water vapor barrier properties, as they are intrinsically hydrophilic. Palmitic acid (PA) as hydrophobic material was incorporated into semi-refined kappa-carrageenan (SRKC) edible films in order to improve water vapor barrier properties. In this study, composite films based on SRKC incorporating PA were prepared and their applications on minimally processed chicken breast fillet were evaluated. Composite SRKC-based films with varying concentrations of PA (5%, 10%, and 15% w/w) were obtained by a solvent casting method. Their mechanical and barrier properties were investigated. Results showed that the incorporation of PA in films caused an increase in thickness, but decrease in water vapor transmission rate (WVTR) as the concentration of PA increased (from 5% to 15% w/w). Composite SRKC-based edible film incorporating 15% w/w of PA presented better water vapor barrier properties as compared to other films with 5% and 10% w/w PA incorporation. Thus, formulation containing 15% w/w PA was used as a wrapping material for film application on minimally processed chicken breast fillet. The application results showed that the incorporation of PA in film caused an effect (p < 0.05) on preventing of weight loss significantly compare to control (non-wrapping), however it did not significantly (p >0.05) change the color of minimally processed chicken breast fillet.

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

PubMed

Glynn, Colm; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2016-11-01

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO 3 nanowire networks on smooth Si/SiO 2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V 2 O 5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-Material Front Contact for 19% Thin Film Solar Cells.

PubMed

van Deelen, Joop; Tezsevin, Yasemin; Barink, Marco

2016-02-06

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

High efficient perovskite solar cell material CH3NH3PbI3: Synthesis of films and their characterization

NASA Astrophysics Data System (ADS)

Bera, Amrita Mandal; Wargulski, Dan Ralf; Unold, Thomas

2018-04-01

Hybrid organometal perovskites have been emerged as promising solar cell material and have exhibited solar cell efficiency more than 20%. Thin films of Methylammonium lead iodide CH3NH3PbI3 perovskite materials have been synthesized by two different (one step and two steps) methods and their morphological properties have been studied by scanning electron microscopy and optical microscope imaging. The morphology of the perovskite layer is one of the most important parameters which affect solar cell efficiency. The morphology of the films revealed that two steps method provides better surface coverage than the one step method. However, the grain sizes were smaller in case of two steps method. The films prepared by two steps methods on different substrates revealed that the grain size also depend on the substrate where an increase of the grain size was found from glass substrate to FTO with TiO2 blocking layer to FTO without any change in the surface coverage area. Present study reveals that an improved quality of films can be obtained by two steps method by an optimization of synthesis processes.

Nonlinear Optical Image Processing with Bacteriorhodopsin Films

NASA Technical Reports Server (NTRS)

Downie, John D.; Deiss, Ron (Technical Monitor)

1994-01-01

The transmission properties of some bacteriorhodopsin film spatial light modulators are uniquely suited to allow nonlinear optical image processing operations to be applied to images with multiplicative noise characteristics. A logarithmic amplitude transmission feature of the film permits the conversion of multiplicative noise to additive noise, which may then be linearly filtered out in the Fourier plane of the transformed image. The bacteriorhodopsin film displays the logarithmic amplitude response for write beam intensities spanning a dynamic range greater than 2.0 orders of magnitude. We present experimental results demonstrating the principle and capability for several different image and noise situations, including deterministic noise and speckle. Using the bacteriorhodopsin film, we successfully filter out image noise from the transformed image that cannot be removed from the original image.

Thin-film semiconductor perspective of organometal trihalide perovskite materials for high-efficiency solar cells

DOE PAGES

Xiao, Zhengguo; Yuan, Yongbo; Wang, Qi; ...

2016-02-19

Organolead trihalide perovskites (OTPs) are arising as a new generation of low-cost active materials for solar cells with efficiency rocketing from 3.5% to over 20% within only five years. From “dye” in dye sensitized solar cells to “hole conductors” and “electron conductors” in mesoscopic heterojunction solar cells, there has been a dramatic conceptual evolution on the function of OTPs in photovoltaic devices. OTPs were originally used as dyes in Gratzel cells, achieving a high efficiency above 15% which, however, did not manifest the excellent charge transport properties of OTPs. An analogy of OTPs to traditional semiconductors was drawn after themore » demonstration of highly efficient planar heterojunction structure OTP devices and the observation of their excellent bipolar transport properties with a large diffusion length exceeding 100 nm in CH 3NH 3PbI 3 (MAPbI 3) polycrystalline thin films. Here, this review aims to provide the most recent advances in the understanding of the origin of the high OTP device efficiency. Specifically we will focus on reviewing the progress in understanding 1) the characterization of fantastic optoelectronic property of OTPs, 2) the unusual defect physics that originate the optoelectronic property; 3) morphology control of the perovskite film from fabrication process and film post-treatment, and 4) device interface and charge transport layers that dramatically impact device efficiency in the OTP thin film devices; 5) photocurrent hysteresis; 6) tandem solar cells; 7) stability of the perovskite materials and solar cell devices.« less

Material influence on hot spot distribution in the nanoparticle heterodimer on film

NASA Astrophysics Data System (ADS)

Chen, Fang; Huang, Yingzhou; Wei, Hua; Wang, Shuxia; Zeng, Xiping; Cao, Wenbin; Wen, Weijia

2018-04-01

The metal nanoparticle aggregated on film, as an effective plasma enhancement pathway, has been widely used in various surface plasmon-related fields. In this study, the hot spots on the metal nanoparticle dimer composed of different materials (Agsbnd Au, Agsbnd Pd, and Agsbnd Cu) on metal (Au) film were investigated with finite element method. Based on the results, the hot spot distribution affected by the material can be confirmed by the electric field distribution of the metal nanoparticle dimer on the film. The aggregation effects of Au and Ag nanoparticles in Ausbnd Ag dimer system are not significant. However, for the Pdsbnd Ag dimer system, the hot spot aggregation effect is slightly larger than that of the Pd nanoparticle under the Ag nanoparticle. Besides, the non-uniform hot spots would bring about the light focusing phenomenon that the light intensity under Ag nanoparticle is almost 100 times greater than that under Cu nanoparticle in Agsbnd Cu dimer system. These results were further confirmed by the surface charge distribution, and analyzed based on the plasmonic hybridization theory. The data about the nanoparticle dimer on the dielectric (Si) film demonstrate the importance of induced image charges on the film surface in such a light focusing phenomenon. Our findings can enhance the understanding of the surface plasmon coupling in different materials, which may have great application prospects in surface plasmon-related fields, such as SERS, plasmonic enhanced solar cell, and plasmonic sensoring, etc.

All solution processed organic thin film transistor-backplane with printing technology for electrophoretic display

USGS Publications Warehouse

Lee, Myung W.; Song, C.K.

2012-01-01

In this study, solution processes were developed for backplane using an organic thin film transistor (OTFT) as a driving device for an electrophoretic display (EPD) panel. The processes covered not only the key device of OTFTs but also interlayer and pixel electrodes. The various materials and printing processes were adopted to achieve the requirements of devices and functioning layers. The performance of OTFT of the backplane was sufficient to drive EPD sheet by producing a mobility of 0.12 cm2/v x sec and on/off current ratio of 10(5).

Sensitometric and archival evaluation of Kodak RA films in dental automatic processing.

PubMed

Thunthy, K H; Yeadon, W R; Winberg, R

1994-04-01

The Kodak Rapid Access System is an extension of the T-grain technology (T-Mat film). Unlike the T-Mat film, the T-Mat/Rapid Access film is forehardened by the addition of more hardener to the film emulsion. It can thus be processed rapidly in a Kodak Rapid Access medical processor in only 45 seconds dry-to-dry cycle by using the Kodak X-Omat RA/30 developer that does not contain a hardener. The absence of the hardener, glutaraldehyde, in the developer also makes this solution environmentally safer. In medical radiography, the T-Mat film has been replaced by the T-Mat/Rapid Access film. However, in dental extraoral radiography the T-Mat film is still being used because the processing solutions and the comparatively low temperatures of dental automatic processors are different from those used in medical radiography. This report shows that, for panoramic and other dental extraoral radiography, T-Mat films can be replaced by T-Mat/RA films by processing them in conventional Kodak X-Omat RP solutions using a dental automatic processing cycle. The differences in the sensitometric properties of the T-Mat and T-Mat/rapid Access films were negligible and therefore clinically insignificant. All films tested well for archival quality.

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

DTIC Science & Technology

2017-12-04

34High-Concentration III-V Multijunction Solar Cells," 2017, <http://www.nrel.gov/ pv /high-concentration-iii-v-multijunction- solar - cells.html>. O. K...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR ...0242 Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2012-08-01

This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

Processing And Patterning Of Thin Film Superconductors Formed By Metallo-Organic Deposition

NASA Astrophysics Data System (ADS)

Micheli, Adolph L.; Mantese, Joseph V.; Hamdi, Aboud H.

1990-04-01

Thin film superconductors of Y-Ba-Cu and Yb-Ba-Cu were formed by the pyrolysis of neodecanoate solutions of Y, Yb, Ba and Cu which had been deposited onto <100> SrTiO3 substrates [1]. Rapid thermal annealing, in oxygen, of the as-deposited films produced high T films having superconducting onset temperatures above 90 K and zero resistance at 8g K. Scanning Electron Microscopy (SEM) revealed enhancements in grain growth, compared to furnace annealed films, by a factor of 4. X-ray diffraction analysis showed preferred epitaxial grain growth with the c-axis of the films oriented both perpendicular and parallel to the substrate surface. Separate Rutherford Backscattering Spectrometry (RBS) channeling experiments confirmed the formation of preferred epitaxial grain growth. Film composition was determined by RBS and Inductively Coupled Plasma Emission Spectrometry (ICPES). Selective patterning was accomplished by focused beam exposure of the metal neodecanoate films [2-4]. The exposure rendered the neodecanoate film locally insoluble in xylene, thus permitting selective area patterning prior to pyrolysis. Electron, ion and laser beams were used to pattern films on <100> SrTiO3. The finest lines, approximately 5 #m in width and 26 nm thick, were patterned using electron beams whose lines had superconducting onsets above 90 K and zero resistance at 69 K after rapid thermal annealing. Both ion beam and laser patterning had similar superconducting onsets and zero resistance. Neodecanoates of Y, Yb, Ba, and Cu were formed, as previously described [5], by reacting the metal acetates of these materials with either ammonium neodecanoate or tetramethyl ammonium neodecanoate. The carboxylates formed from these reactions were then dissolved in a solution of xylene and pyridine. The individual chemical constituents were combined to produce solutions, Ln:Ba:Cu, in the ratio 1:2:4. Here, Ln is a rare-earth element. Details of the preparation of the metal carboxylates may be found

Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

NASA Astrophysics Data System (ADS)

Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

2018-02-01

The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

Quality by Design approach for studying the impact of formulation and process variables on product quality of oral disintegrating films.

PubMed

Mazumder, Sonal; Pavurala, Naresh; Manda, Prashanth; Xu, Xiaoming; Cruz, Celia N; Krishnaiah, Yellela S R

2017-07-15

The present investigation was carried out to understand the impact of formulation and process variables on the quality of oral disintegrating films (ODF) using Quality by Design (QbD) approach. Lamotrigine (LMT) was used as a model drug. Formulation variable was plasticizer to film former ratio and process variables were drying temperature, air flow rate in the drying chamber, drying time and wet coat thickness of the film. A Definitive Screening Design of Experiments (DoE) was used to identify and classify the critical formulation and process variables impacting critical quality attributes (CQA). A total of 14 laboratory-scale DoE formulations were prepared and evaluated for mechanical properties (%elongation at break, yield stress, Young's modulus, folding endurance) and other CQA (dry thickness, disintegration time, dissolution rate, moisture content, moisture uptake, drug assay and drug content uniformity). The main factors affecting mechanical properties were plasticizer to film former ratio and drying temperature. Dissolution rate was found to be sensitive to air flow rate during drying and plasticizer to film former ratio. Data were analyzed for elucidating interactions between different variables, rank ordering the critical materials attributes (CMA) and critical process parameters (CPP), and for providing a predictive model for the process. Results suggested that plasticizer to film former ratio and process controls on drying are critical to manufacture LMT ODF with the desired CQA. Published by Elsevier B.V.

Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1996-01-01

We present a summary of the research, citations of publications resulting from the research and abstracts of such publications. We have made no inventions in the performance of the work in this project. The main goals of the project were to set up a Chemical Vapor Deposition (CVD) diamond growth system attached to an UltraHigh Vacuum (UHV) atomic resolution Scanning Tunneling Microscopy (STM) system and carry out experiments aimed at studying the properties and growth of diamond films using atomic resolution UHV STM. We successfully achieved these goals. We observed, for the first time, the atomic structure of the surface of CVD grown epitaxial diamond (100) films using UHV STM. We studied the effects of atomic hydrogen on the CVD diamond growth process. We studied the electronic properties of the diamond (100) (2x1) surface, and the effect of alkali metal adsorbates such as Cs on the work function of this surface using UHV STM spectroscopy techniques. We also studied, using STM, new electronic materials such as carbon nanotubes and gold nanostructures. This work resulted in four publications in refereed scientific journals and five publications in refereed conference proceedings.

Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and films.

PubMed

Yuan, Min; Mitzi, David B

2009-08-21

A combination of unique solvent properties of hydrazine enables the direct dissolution of a range of metal chalcogenides at ambient temperature, rendering this an extraordinarily simple and soft synthetic approach to prepare new metal chalcogenide-based materials. The extended metal chalcogenide parent framework is broken up during this process, and the resulting metal chalcogenide building units are re-organized into network structures (from 0D to 3D) based upon their interactions with the hydrazine/hydrazinium moieties. This Perspective will review recent crystal and materials chemistry developments within this family of compounds and will briefly discuss the utility of this approach in metal chalcogenide thin-film deposition.

Investigation of test methods, material properties and processes for solar cell encapsulants

NASA Technical Reports Server (NTRS)

Willis, P. B.; Baum, B.

1977-01-01

The potentially useful encapsulating materials for Task 3 of the Low-Cost Silicon Solar Array project were studied to identify, evaluate, and recommend encapsulant materials and processes for the production of cost-effective, long-life solar cell modules. Materials for study were chosen on the basis of existing knowledge of generic chemical types having high resistance to environmental weathering. The materials varied from rubbers to thermoplastics and presented a broad range of mechanical properties and processing requirements. Basic physical and optical properties were measured on the polymers and were redetermined after exposure to indoor artificial accelerated aging conditions covering four time periods. Strengths and weaknesses of the various materials were revealed and data was accumulated for the development of predictive methodologies. To date, silicone rubbers, fluorocarbons, and acrylic polymers appear to have the most promising combination of characteristics. The fluorocarbons may be used only as films, however, because of their high cost.

Efficiency loss of thin film Cu(InxGa1-x)Se(S) solar panels by lamination process

NASA Astrophysics Data System (ADS)

Xu, Li

2017-04-01

Efficiency loss of thin film Cu(InxGa1-x)Se(S) (CIGS) solar panels by lamination process has been compromising the final output power in commercial products of solar modules, but few reports have been published on such issue, as the majority of the investigation is focused on the efficiency at the circuit level, i.e., before lamination process. In this paper, we studied the effect of lamination process to the efficiency loss of thin film CIGS solar panels. It was observed that the fill factor degradation dominated the efficiency loss with the small change of Voc and Jsc. Experiments showed that neither the temperature nor the pressure, nor the two combined in the lamination process is the root cause of the efficiency loss; instead, the ethylene vinyl acetate (EVA) layer as the encapsulation material which directly contacts the solar cell devices was the major factor responsible for the efficiency loss. It was found that the gel content of the cured EVA film after lamination was highly correlated to the efficiency loss. The higher the gel content, the higher the efficiency loss. The mismatch of coefficient of thermal expansion between the EVA film and the CIGS thin film resulted in compressive stress in the device layer after lamination process. The compressive stress is speculated to affect the lattice defects, but need to be confirmed with the measurement of capacitance voltage (CV) and drive level capacitance profiling (DLCP). Three-day sun soak was then carried out and it was observed that the fill factor recovered significantly and so did the efficiency. Experiments also showed that there was no impact of chemical erosion on the front electrode of transparent conductive oxide (TCO) films by chemicals released from the EVA films during lamination.

Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

NASA Astrophysics Data System (ADS)

Serra, R.; Oliveira, V.; Oliveira, J. C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

2015-03-01

Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm2. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different circumstances. Processing of the amorphous films at low fluence (72 μJ) results in LIPSS formation only on localized spots on the film surface. LIPSS formation was also observed on the top of the undulations formed after laser processing with 78 μJ of the amorphous film deposited at 800 °C. Finally, large-area homogeneous LIPSS coverage of the boron carbide crystalline films surface was achieved within a large range

Measurements of material properties for solar cells. [aluminum film and KAPTON

NASA Technical Reports Server (NTRS)

Castle, J. G., Jr.

1978-01-01

Measurements on two candidate materials for space flight are reported. The observed optical transmittance of aluminum films vapor deposited on fused quartz showed anomalously high transmittance thru 400 A and 600 A and showed an effective skin depth of 110 A in the latter part of the 1000 A thickness. KAPTON films are shown by their optical transmission spectra to have an energy gap for electron excitation of approximately 2.5 eV, which value depends on the thickness as manufactured. The resistance of KAPTON film to ionizing radiation is described by their optical spectra and their electron spin resonance spectra.

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

NASA Astrophysics Data System (ADS)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2007-11-01

deformation. Hence, surface deformation caused by liquid phase instabilities is rapidly quenched-in during the cooling phase. This deformed state is further evolved by subsequent laser pulses. These results have implications to developing accurate computer simulations of thin-film dewetting by energetic beams aimed at the manufacturing of optically active nanoscale materials for applications including information processing, optical devices, and solar energy harvesting.

Methane production by attached film

DOEpatents

Jewell, William J.

1981-01-01

A method for purifying wastewater of biodegradable organics by converting the organics to methane and carbon dioxide gases is disclosed, characterized by the use of an anaerobic attached film expanded bed reactor for the reaction process. Dilute organic waste material is initially seeded with a heterogeneous anaerobic bacteria population including a methane-producing bacteria. The seeded organic waste material is introduced into the bottom of the expanded bed reactor which includes a particulate support media coated with a polysaccharide film. A low-velocity upward flow of the organic waste material is established through the bed during which the attached bacterial film reacts with the organic material to produce methane and carbon dioxide gases, purified water, and a small amount of residual effluent material. The residual effluent material is filtered by the film as it flows upwardly through the reactor bed. In a preferred embodiment, partially treated effluent material is recycled from the top of the bed to the bottom of the bed for further treatment. The methane and carbon dioxide gases are then separated from the residual effluent material and purified water.

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

DOEpatents

Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

1999-01-01

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

NASA Astrophysics Data System (ADS)

Tidrow, Steven Clay

Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films

Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

ERIC Educational Resources Information Center

Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

2004-01-01

Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

NASA Astrophysics Data System (ADS)

Lim, Wantae

2009-12-01

This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Structural and kinetic studies of metal hydride hydrogen storage materials using thin film deposition and characterization techniques

NASA Astrophysics Data System (ADS)

Kelly, Stephen Thomas

Hydrogen makes an attractive energy carrier for many reasons. It is an abundant chemical fuel that can be produced from a wide variety of sources and stored for very long periods of time. When used in a fuel cell, hydrogen emits only water at the point of use, making it very attractive for mobile applications such as in an automobile. Metal hydrides are promising candidates for on-board reversible hydrogen storage in mobile applications due to their very high volumetric storage capacities---in most cases exceeding even that of liquid hydrogen. The United States Department of Energy (DOE) has set fuel system targets for an automotive hydrogen storage system, but as of yet no single material meets all the requirements. In particular, slow reaction kinetics and/or inappropriate thermodynamics plague many metal hydride hydrogen storage materials. In order to engineer a practical material that meets the DOE targets, we need a detailed understanding of the kinetic and thermodynamic properties of these materials during the phase change. In this work I employed sputter deposited thin films as a platform to study materials with highly controlled chemistry, microstructure and catalyst placement using thin film characterization techniques such as in situ x-ray diffraction (XRD) and neutron reflectivity. I observed kinetic limitations in the destabilized Mg2Si system due to the slow diffusion of the host Mg and Si atoms while forming separate MgH2 and Si phases. Conversely, I observed that the presence of Al in the Mg/Al system inhibits hydrogen diffusion while the host Mg and Al atoms interdiffuse readily, allowing the material to fall into a kinetic and/or thermodynamic trap by forming intermetallic compounds such as Mg17Al 12. By using in situ XRD to analyze epitaxial Mg films grown on (001) oriented Al2O3 substrates I observed hydride growth consistent with a model of a planar hydride layer growing into an existing metal layer. Subsequent film cycling changes the hydrogen

Material processing of convection-driven flow field and temperature distribution under oblique gravity

NASA Technical Reports Server (NTRS)

Hung, R. J.

1995-01-01

A set of mathematical formulation is adopted to study vapor deposition from source materials driven by heat transfer process under normal and oblique directions of gravitational acceleration with extremely low pressure environment of 10(exp -2) mm Hg. A series of time animation of the initiation and development of flow and temperature profiles during the course of vapor deposition has been obtained through the numerical computation. Computations show that the process of vapor deposition has been accomplished by the transfer of vapor through a fairly complicated flow pattern of recirculation under normal direction gravitational acceleration. It is obvious that there is no way to produce a homogeneous thin crystalline films with fine grains under such a complicated flow pattern of recirculation with a non-uniform temperature distribution under normal direction gravitational acceleration. There is no vapor deposition due to a stably stratified medium without convection for reverse normal direction gravitational acceleration. Vapor deposition under oblique direction gravitational acceleration introduces a reduced gravitational acceleration in vertical direction which is favorable to produce a homogeneous thin crystalline films. However, oblique direction gravitational acceleration also induces an unfavorable gravitational acceleration along horizontal direction which is responsible to initiate a complicated flow pattern of recirculation. In other words, it is necessary to carry out vapor deposition under a reduced gravity in the future space shuttle experiments with extremely low pressure environment to process vapor deposition with a homogeneous crystalline films with fine grains. Fluid mechanics simulation can be used as a tool to suggest most optimistic way of experiment with best setup to achieve the goal of processing best nonlinear optical materials.

Mechanical properties of thin-film materials evaluated from amplitude-dependent internal friction

NASA Astrophysics Data System (ADS)

Nishino, Yoichi

1999-09-01

A method is presented to evaluate the mechanical properties of thin-film materials from measurements of the amplitude-dependent internal friction. According to the constitutive equation, the internal friction in the film can be determined separately from measured damping of the film/substrate composite. The internal friction in aluminum films is dependent on the strain amplitude that is approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction in the film can be converted into the plastic strain as a function of effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 increases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of microplastic flow. The microflow stress at a constant level of the plastic strain varies inversely with the film thickness, provided the grain size is larger than the film thickness. The film thickness effect in the microplastic range can be well explained by the bowing of a dislocation segment whose ends are pinned at the film surface and at the film/substrate interface.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Preparation of a semiconductor thin film

DOEpatents

Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

1998-01-01

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

49 CFR 175.706 - Separation distances for undeveloped film from packages containing Class 7 (radioactive) materials.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Separation distances for undeveloped film from... Classification of Material § 175.706 Separation distances for undeveloped film from packages containing Class 7... film. Transport index Minimum separation distance to nearest undeveloped film for various times in...

49 CFR 175.706 - Separation distances for undeveloped film from packages containing Class 7 (radioactive) materials.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 2 2011-10-01 2011-10-01 false Separation distances for undeveloped film from... Classification of Material § 175.706 Separation distances for undeveloped film from packages containing Class 7... film. Transport index Minimum separation distance to nearest undeveloped film for various times in...

49 CFR 175.706 - Separation distances for undeveloped film from packages containing Class 7 (radioactive) materials.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Separation distances for undeveloped film from... Classification of Material § 175.706 Separation distances for undeveloped film from packages containing Class 7... film. Transport index Minimum separation distance to nearest undeveloped film for various times in...

49 CFR 175.706 - Separation distances for undeveloped film from packages containing Class 7 (radioactive) materials.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 2 2012-10-01 2012-10-01 false Separation distances for undeveloped film from... Classification of Material § 175.706 Separation distances for undeveloped film from packages containing Class 7... film. Transport index Minimum separation distance to nearest undeveloped film for various times in...

49 CFR 175.706 - Separation distances for undeveloped film from packages containing Class 7 (radioactive) materials.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Separation distances for undeveloped film from... Classification of Material § 175.706 Separation distances for undeveloped film from packages containing Class 7... film. Transport index Minimum separation distance to nearest undeveloped film for various times in...

Process Modeling With Inhomogeneous Thin Films

NASA Astrophysics Data System (ADS)

Machorro, R.; Macleod, H. A.; Jacobson, M. R.

1986-12-01

Designers of optical multilayer coatings commonly assume that the individual layers will be ideally homogeneous and isotropic. In practice, it is very difficult to control the conditions involved in the complex evaporation process sufficiently to produce such ideal films. Clearly, changes in process parameters, such as evaporation rate, chamber pressure, and substrate temperature, affect the microstructure of the growing film, frequently producing inhomogeneity in structure or composition. In many cases, these effects are interdependent, further complicating the situation. However, this process can be simulated on powerful, interactive, and accessible microcomputers. In this work, we present such a model and apply it to estimate the influence of an inhomogeneous layer on multilayer performance. Presently, the program simulates film growth, thermal expansion and contraction, and thickness monitoring procedures, and includes the effects of uncertainty in these parameters or noise. Although the model is being developed to cover very general cases, we restrict the present discussion to isotropic and nondispersive quarterwave layers to understand the particular effects of inhomogeneity. We studied several coating designs and related results and tolerances to variations in evaporation conditions. The model is composed of several modular subprograms, is written in Fortran, and is executed on an IBM-PC with 640 K of memory. The results can be presented in graphic form on a monochrome monitor. We are currently installing and implementing color capability to improve the clarity of the multidimensional output.

Pyroelectric Materials for Uncooled Infrared Detectors: Processing, Properties, and Applications

NASA Technical Reports Server (NTRS)

Aggarwal, M. D.; Batra, A. K.; Guggilla, P.; Edwards, M. E.; Penn, B. G.; Currie, J. R., Jr.

2010-01-01

Uncooled pyroelectric detectors find applications in diverse and wide areas such as industrial production; automotive; aerospace applications for satellite-borne ozone sensors assembled with an infrared spectrometer; health care; space exploration; imaging systems for ships, cars, and aircraft; and military and security surveillance systems. These detectors are the prime candidates for NASA s thermal infrared detector requirements. In this Technical Memorandum, the physical phenomena underlying the operation and advantages of pyroelectric infrared detectors is introduced. A list and applications of important ferroelectrics is given, which is a subclass of pyroelectrics. The basic concepts of processing of important pyroelectrics in various forms are described: single crystal growth, ceramic processing, polymer-composites preparation, and thin- and thick-film fabrications. The present status of materials and their characteristics and detectors figures-of-merit are presented in detail. In the end, the unique techniques demonstrated for improving/enhancing the performance of pyroelectric detectors are illustrated. Emphasis is placed on recent advances and emerging technologies such as thin-film array devices and novel single crystal sensors.

Process for selectively patterning epitaxial film growth on a semiconductor substrate

DOEpatents

Sheldon, P.; Hayes, R.E.

1984-12-04

Disclosed is a process for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

Process for selectively patterning epitaxial film growth on a semiconductor substrate

DOEpatents

Sheldon, Peter; Hayes, Russell E.

1986-01-01

A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

Nanocluster metal films as thermoelectric material for radioisotope mini battery unit

NASA Astrophysics Data System (ADS)

Borisyuk, P. V.; Krasavin, A. V.; Tkalya, E. V.; Lebedinskii, Yu. Yu.; Vasiliev, O. S.; Yakovlev, V. P.; Kozlova, T. I.; Fetisov, V. V.

2016-10-01

The paper is devoted to studying the thermoelectric and structural properties of films based on metal nanoclusters (Au, Pd, Pt). The experimental results of the study of single nanoclusters' tunneling conductance obtained with scanning tunneling spectroscopy are presented. The obtained data allowed us to evaluate the thermoelectric power of thin film consisting of densely packed individual nanoclusters. It is shown that such thin films can operate as highly efficient thermoelectric materials. A scheme of miniature thermoelectric radioisotope power source based on the thorium-228 isotope is proposed. The efficiency of the radioisotope battery using thermoelectric converters based on nanocluster metal films is shown to reach values up to 1.3%. The estimated characteristics of the device are comparable with the parameters of up-to-date radioisotope batteries based on nickel-63.

Eco-Friendly and Biodegradable Biopolymer Chitosan/Y₂O₃ Composite Materials in Flexible Organic Thin-Film Transistors.

PubMed

Du, Bo-Wei; Hu, Shao-Ying; Singh, Ranjodh; Tsai, Tsung-Tso; Lin, Ching-Chang; Ko, Fu-Hsiang

2017-09-03

The waste from semiconductor manufacturing processes causes serious pollution to the environment. In this work, a non-toxic material was developed under room temperature conditions for the fabrication of green electronics. Flexible organic thin-film transistors (OTFTs) on plastic substrates are increasingly in demand due to their high visible transmission and small size for use as displays and wearable devices. This work investigates and analyzes the structured formation of aqueous solutions of the non-toxic and biodegradable biopolymer, chitosan, blended with high-k-value, non-toxic, and biocompatible Y₂O₃ nanoparticles. Chitosan thin films blended with Y₂O₃ nanoparticles were adopted as the gate dielectric thin film in OTFTs, and an improvement in the dielectric properties and pinholes was observed. Meanwhile, the on/off current ratio was increased by 100 times, and a low leakage current was observed. In general, the blended chitosan/Y₂O₃ thin films used as the gate dielectric of OTFTs are non-toxic, environmentally friendly, and operate at low voltages. These OTFTs can be used on surfaces with different curvature radii because of their flexibility.

A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

PubMed

Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

2016-09-19

The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

contribute to surface deformation. Hence, surface deformation caused by liquid phase instabilities is rapidly quenched-in during the cooling phase. This deformed state is further evolved by subsequent laser pulses. These results have implications to developing accurate computer simulations of thin-film dewetting by energetic beams aimed at the manufacturing of optically active nanoscale materials for applications including information processing, optical devices, and solar energy harvesting.« less

Material Processing Opportunites Utilizing a Free Electron Laser

NASA Astrophysics Data System (ADS)

Todd, Alan

1996-11-01

Many properties of photocathode-driven Free Electron Lasers (FEL) are extremely attractive for material processing applications. These include: 1) broad-band tunability across the IR and UV spectra which permits wavelength optimization, depth deposition control and utilization of resonance phenomena; 2) picosecond pulse structure with continuous nanosecond spacing for optimum deposition efficiency and minimal collateral damage; 3) high peak and average radiated power for economic processing in quantity; and 4) high brightness for spatially defined energy deposition and intense energy density in small spots. We discuss five areas: polymer, metal and electronic material processing, micromachining and defense applications; where IR or UV material processing will find application if the economics is favorable. Specific examples in the IR and UV, such as surface texturing of polymers for improved look and feel, and anti-microbial food packaging films, which have been demonstrated using UV excimer lamps and lasers, will be given. Unfortunately, although the process utility is readily proven, the power levels and costs of lamps and lasers do not scale to production margins. However, from these examples, application specific cost targets ranging from 0.1=A2/kJ to 10=A2/kJ of delivered radiation at power levels from 10 kW to 500 kW, have been developed and are used to define strawman FEL processing systems. Since =46EL radiation energy extraction from the generating electron beam is typically a few percent, at these high average power levels, economic considerations dictate the use of a superconducting RF accelerator with energy recovery to minimize cavity and beam dump power loss. Such a 1 kW IR FEL, funded by the US Navy, is presently under construction at the Thomas Jefferson National Accelerator Facility. This dual-use device, scheduled to generate first light in late 1997, will test both the viability of high-power FELs for shipboard self-defense against cruise

Film as Source Material in Advanced Foreign Language Classes

ERIC Educational Resources Information Center

Kaiser, Mark; Shibahara, Chika

2014-01-01

This paper suggests new ways filmic texts might be employed in advanced foreign language classes. Typically, film has been seen as source material for broadening students' vocabulary or for developing communicative competence. This paper considers what a close reading of a filmic text might offer foreign language educators and students by…

Preparation of a semiconductor thin film

DOEpatents

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Primary research efforts on exploring the commercial possibilities of thin film growth and materials purification in space

NASA Technical Reports Server (NTRS)

1989-01-01

The progress made on research programs in the 1987 to 1988 year is reported. The research is aimed at producing thin film semiconductors and superconductor materials in space. Sophisticated vacuum chambers and equipment were attained for the epitaxial thin film growth of semiconductors, metals and superconductors. In order to grow the best possible epitaxial films at the lowest possible temperatures on earth, materials are being isoelectronically doped during growth. It was found that isoelectrically doped film shows the highest mobility in comparison with films grown at optimal temperatures. Success was also attained in growing epitaxial films of InSb on sapphire which show promise for infrared sensitive devices in the III-V semiconductor system.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Synthesis of thin films and materials utilizing a gaseous catalyst

DOEpatents

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Exposures and their determinants in radiographic film processing.

PubMed

Teschke, Kay; Chow, Yat; Brauer, Michael; Chessor, Ed; Hirtle, Bob; Kennedy, Susan M; Yeung, Moira Chan; Ward, Helen Dimich

2002-01-01

Radiographers process X-ray films using developer and fixer solutions that contain chemicals known to cause or exacerbate asthma. In a study in British Columbia, Canada, radiographers' personal exposures to glutaraldehyde (a constituent of the developer chemistry), acetic acid (a constituent of the fixer chemistry), and sulfur dioxide (a byproduct of sulfites, present in both developer and fixer solutions) were measured. Average full-shift exposures to glutaraldehyde, acetic acid, and sulfur dioxide were 0.0009 mg/m3, 0.09 mg/m3, and 0.08 mg/m3, respectively, all more than one order of magnitude lower than current occupational exposure limits. Local exhaust ventilation of the processing machines and use of silver recovery units lowered exposures, whereas the number of films processed per machine and the time spent near the machines increased exposures. Personnel in clinic facilities had higher exposures than those in hospitals. Private clinics were less likely to have local exhaust ventilation and silver recovery units. Their radiographers spent more time in the processor areas and processed more films per machine. Although exposures were low compared with exposure standards, there are good reasons to continue practices to minimize or eliminate exposures: glutaraldehyde and hydroquinone (present in the developer) are sensitizers; the levels at which health effects occur are not yet clearly established, but appear to be lower than current standards; and health effects resulting from the mixture of chemicals are not understood. Developments in digital imaging technology are making available options that do not involve wet-processing of photographic film and therefore could eliminate the use of developer and fixer chemicals altogether.

New process for preparing complex-shaped dielectric film similar to Mylar

NASA Astrophysics Data System (ADS)

Lagasse, R. R.; Kraynik, A. M.

1982-02-01

A new thermoforming/heat-treatment process yields complex-shaped dielectric film having electrical and shrinkage properties similar to those of flat Mylar film. This similarity should extend to other physical properties because the new process is directly analogous to the process used to prepare Mylar. Commercially available poly(ethylene terephthalate) film is formed into a cavity at approx. 110 C and then heat treated at approx. 180 C. A laboratory-scale forming apparatus has produced cylindrically shaped films having depth/diameter ratio approx. 1, a tapered wall-section, and variation in wall thickness of 3X. Evaluation of other forming methods suggest that the production rate and thickness uniformity can be improved with existing technology. Thermal shrinkage at 150 C, 1 kHz dielectric constant from -55 to +70 C, leakage current at 1 kV, and breakdown voltage have been measured for both the complex-shaped film and Mylar.

Self-Assembling Process for Fabricating Tailored Thin Films

ScienceCinema

Sandia

2017-12-09

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

NASA Astrophysics Data System (ADS)

Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

2016-12-01

Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

Microscopic image processing systems for measuring nonuniform film thickness profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, A.H.; Plawsky, J.L.; DasGupta, S.

1994-01-01

In very thin liquid films. transport processes are controlled by the temperature and the interfacial intermolecular force field which is a function of the film thickness profile and interfacial properties. The film thickness profile and interfacial properties can be measured most efficiently using a microscopic image processing system. IPS, to record the intensity pattern of the reflected light from the film. There are two types of IPS: an image analyzing interferometer (IAI) and/or an image scanning ellipsometer (ISE). The ISE is a novel technique to measure the two dimensional thickness profile of a nonuniform, thin film, from 1 nm upmore » to several {mu}m, in a steady state as well as in a transient state. It is a full field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. Using the ISE, the transient thickness profile of a draining thin liquid film was measured and modeled. The interfacial conditions were determined in situ by measuring the Hamaker constant. The ISE and IAI systems are compared.« less

Solution-processed field-effect transistors based on dihexylquaterthiophene films with performances exceeding those of vacuum-sublimed films.

PubMed

Leydecker, Tim; Trong Duong, Duc; Salleo, Alberto; Orgiu, Emanuele; Samorì, Paolo

2014-12-10

Solution-processable oligothiophenes are model systems for charge transport and fabrication of organic field-effect transistors (OFET) . Herein we report a structure vs function relationship study focused on the electrical characteristics of solution-processed dihexylquaterthiophene (DH4T)-based OFET. We show that by combining the tailoring of all interfaces in the bottom-contact bottom-gate transistor, via chemisorption of ad hoc molecules on electrodes and dielectric, with suitable choice of the film preparation conditions (including solvent type, concentration, volume, and deposition method), it is possible to fabricate devices exhibiting field-effect mobilities exceeding those of vacuum-processed DH4T transistors. In particular, the evaporation rate of the solvent, the processing temperature, as well as the concentration of the semiconducting material were found to hold a paramount importance in driving the self-assembly toward the formation of highly ordered and low-dimensional supramolecular architectures, confirming the kinetically governed nature of the self-assembly process. Among the various architectures, hundreds-of-micrometers long and thin DH4T crystallites exhibited enhanced charge transport.

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Jungwon; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. PMID:29283408

A Study on Sealing Process of Anodized Al Alloy Film

NASA Astrophysics Data System (ADS)

Tsujita, Takeshi; Sato, Hiroshi; Tsukahara, Sonoko; Ishikawa, Yuuichi

Since sealing is an important process to improve the corrosion resistance in practical application of anodized aluminum, we prepared anodic oxide films on A5052 alloy in an oxalic acid bath and a sulfuric acid bath, sealed them at various conditions, and analyzed them by scanning electron microscopy, acid-dissolution examination, admittance measurements and infrared spectroscopy. The pore radius of the oxalic acid anodized film was about 5 times larger than that of sulfuric acid anodized film, while the corrosion resistance of the former showed about 2 times higher value than the latter with the same sealed state and amount of hydroxide formed by sealing process of the former was 6 times larger than the latter, respectively. Steam sealing formed dense hydroxide and boiling water sealing formed big coral-like hydroxide, whereas the corrosion resistance of the film sealed by the former showed about 1.5 times higher value than that sealed by the latter, respectively. Thus microstructure of anodic oxide films and their surface morphology after sealing process clearly depended on their anodizing solution and the sealing condition and showed obvious relation to electric and corrosive properties.

Electrostatic spray deposition of porous Fe 2O 3 thin films as anode material with improved electrochemical performance for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wang, L.; Xu, H. W.; Chen, P. C.; Zhang, D. W.; Ding, C. X.; Chen, C. H.

Iron oxide materials are attractive anode materials for lithium-ion batteries for their high capacity and low cost compared with graphite and most of other transition metal oxides. Porous carbon-free α-Fe 2O 3 films with two types of pore size distribution were prepared by electrostatic spray deposition, and they were characterized by X-ray diffraction, scanning electron microscopy and X-ray absorption near-edge spectroscopy. The 200 °C-deposited thin film exhibits a high reversible capacity of up to 1080 mAh g -1, while the initial capacity loss is at a remarkable low level (19.8%). Besides, the energy efficiency and energy specific average potential (E av) of the Fe 2O 3 films during charge/discharge process were also investigated. The results indicate that the porous α-Fe 2O 3 films have significantly higher energy density than Li 4Ti 5O 12 while it has a similar E av of about 1.5 V. Due to the porous structure that can buffer the volume changes during lithium intercalation/de-intercalation, the films exhibit stable cycling performance. As a potential anode material for high performance lithium-ion batteries that can be applied on electric vehicle and energy storage, rate capability and electrochemical performance under high-low temperatures were also investigated.

Drug-printing by flexographic printing technology--a new manufacturing process for orodispersible films.

PubMed

Janssen, Eva Maria; Schliephacke, Ralf; Breitenbach, Armin; Breitkreutz, Jörg

2013-01-30

Orodispersible films (ODFs) are intended to disintegrate within seconds when placed onto the tongue. The common way of manufacturing is the solvent casting method. Flexographic printing on drug-free ODFs is introduced as a highly flexible and cost-effective alternative manufacturing method in this study. Rasagiline mesylate and tadalafil were used as model drugs. Printing of rasagiline solutions and tadalafil suspensions was feasible. Up to four printing cycles were performed. The possibility to employ several printing cycles enables a continuous, highly flexible manufacturing process, for example for individualised medicine. The obtained ODFs were characterised regarding their mechanical properties, their disintegration time, API crystallinity and homogeneity. Rasagiline mesylate did not recrystallise after the printing process. Relevant film properties were not affected by printing. Results were comparable to the results of ODFs manufactured with the common solvent casting technique, but the APIs are less stressed through mixing, solvent evaporation and heat. Further, loss of material due to cutting jumbo and daughter rolls can be reduced. Therefore, a versatile new manufacturing technology particularly for processing high-potent low-dose or heat sensitive drugs is introduced in this study. Copyright © 2012 Elsevier B.V. All rights reserved.

Film characteristics pertinent to coherent optical data processing systems.

PubMed

Thomas, C E

1972-08-01

Photographic film is studied quantitatively as the input mechanism for coherent optical data recording and processing systems. The two important film characteristics are the amplitude transmission vs exposure (T(A) - E) curve and the film noise power spectral density. Both functions are measured as a function of the type of film, the type of developer, developer time and temperature, and the exposing and readout light wavelengths. A detailed analysis of a coherent optical spatial frequency analyzer reveals that the optimum do bias point for 649-F film is an amplitude transmission of about 70%. This operating point yields minimum harmonic and intermodulation distortion, whereas the 50% amplitude transmission bias point recommended by holographers yields maximum diffraction efficiency. It is also shown that the effective ac gain or contrast of the film is nearly independent of the development conditions for a given film. Finally, the linear dynamic range of one particular coherent optical spatial frequency analyzer is shown to be about 40-50 dB.

Using Polarized Spectroscopy to Investigate Order in Thin-Films of Ionic Self-Assembled Materials Based on Azo-Dyes

PubMed Central

Ahmad, Mariam; Andersen, Frederik; Brend Bech, Ári; Bendixen, H. Krestian L.; Nawrocki, Patrick R.; Bloch, Anders J.; Bora, Ilkay; Bukhari, Tahreem A.; Bærentsen, Nicolai V.; Carstensen, Jens; Chima, Smeeah; Colberg, Helene; Dahm, Rasmus T.; Daniels, Joshua A.; Dinckan, Nermin; El Idrissi, Mohamed; Erlandsen, Ricci; Førster, Marc; Ghauri, Yasmin; Gold, Mikkel; Hansen, Andreas; Hansen, Kenn; Helmsøe-Zinck, Mathias; Henriksen, Mathias; Hoffmann, Sophus V.; Hyllested, Louise O. H.; Jensen, Casper; Kallenbach, Amalie S.; Kaur, Kirandip; Khan, Suheb R.; Kjær, Emil T. S.; Kristiansen, Bjørn; Langvad, Sylvester; Lund, Philip M.; Munk, Chastine F.; Møller, Theis; Nehme, Ola M. Z.; Nejrup, Mathilde Rove; Nexø, Louise; Nielsen, Simon Skødt Holm; Niemeier, Nicolai; Nikolajsen, Lasse V.; Nøhr, Peter C. T.; Skaarup Ovesen, Jacob; Paustian, Lucas; Pedersen, Adam S.; Petersen, Mathias K.; Poulsen, Camilla M.; Praeger-Jahnsen, Louis; Qureshi, L. Sonia; Schiermacher, Louise S.; Simris, Martin B.; Smith, Gorm; Smith, Heidi N.; Sonne, Alexander K.; Zenulovic, Marko R.; Winther Sørensen, Alma; Vogt, Emil; Væring, Andreas; Westermann, Jonas; Özcan, Sevin B.

2018-01-01

Three series of ionic self-assembled materials based on anionic azo-dyes and cationic benzalkonium surfactants were synthesized and thin films were prepared by spin-casting. These thin films appear isotropic when investigated with polarized optical microscopy, although they are highly anisotropic. Here, three series of homologous materials were studied to rationalize this observation. Investigating thin films of ordered molecular materials relies to a large extent on advanced experimental methods and large research infrastructure. A statement that in particular is true for thin films with nanoscopic order, where X-ray reflectometry, X-ray and neutron scattering, electron microscopy and atom force microscopy (AFM) has to be used to elucidate film morphology and the underlying molecular structure. Here, the thin films were investigated using AFM, optical microscopy and polarized absorption spectroscopy. It was shown that by using numerical method for treating the polarized absorption spectroscopy data, the molecular structure can be elucidated. Further, it was shown that polarized optical spectroscopy is a general tool that allows determination of the molecular order in thin films. Finally, it was found that full control of thermal history and rigorous control of the ionic self-assembly conditions are required to reproducibly make these materials of high nanoscopic order. Similarly, the conditions for spin-casting are shown to be determining for the overall thin film morphology, while molecular order is maintained. PMID:29462883

Using Polarized Spectroscopy to Investigate Order in Thin-Films of Ionic Self-Assembled Materials Based on Azo-Dyes.

PubMed

Kühnel, Miguel R Carro-Temboury Martin; Ahmad, Mariam; Andersen, Frederik; Bech, Ári Brend; Bendixen, H Krestian L; Nawrocki, Patrick R; Bloch, Anders J; Bora, Ilkay; Bukhari, Tahreem A; Bærentsen, Nicolai V; Carstensen, Jens; Chima, Smeeah; Colberg, Helene; Dahm, Rasmus T; Daniels, Joshua A; Dinckan, Nermin; Idrissi, Mohamed El; Erlandsen, Ricci; Førster, Marc; Ghauri, Yasmin; Gold, Mikkel; Hansen, Andreas; Hansen, Kenn; Helmsøe-Zinck, Mathias; Henriksen, Mathias; Hoffmann, Sophus V; Hyllested, Louise O H; Jensen, Casper; Kallenbach, Amalie S; Kaur, Kirandip; Khan, Suheb R; Kjær, Emil T S; Kristiansen, Bjørn; Langvad, Sylvester; Lund, Philip M; Munk, Chastine F; Møller, Theis; Nehme, Ola M Z; Nejrup, Mathilde Rove; Nexø, Louise; Nielsen, Simon Skødt Holm; Niemeier, Nicolai; Nikolajsen, Lasse V; Nøhr, Peter C T; Orlowski, Dominik B; Overgaard, Marc; Ovesen, Jacob Skaarup; Paustian, Lucas; Pedersen, Adam S; Petersen, Mathias K; Poulsen, Camilla M; Praeger-Jahnsen, Louis; Qureshi, L Sonia; Ree, Nicolai; Schiermacher, Louise S; Simris, Martin B; Smith, Gorm; Smith, Heidi N; Sonne, Alexander K; Zenulovic, Marko R; Sørensen, Alma Winther; Sørensen, Karina; Vogt, Emil; Væring, Andreas; Westermann, Jonas; Özcan, Sevin B; Sørensen, Thomas Just

2018-02-15

Three series of ionic self-assembled materials based on anionic azo-dyes and cationic benzalkonium surfactants were synthesized and thin films were prepared by spin-casting. These thin films appear isotropic when investigated with polarized optical microscopy, although they are highly anisotropic. Here, three series of homologous materials were studied to rationalize this observation. Investigating thin films of ordered molecular materials relies to a large extent on advanced experimental methods and large research infrastructure. A statement that in particular is true for thin films with nanoscopic order, where X-ray reflectometry, X-ray and neutron scattering, electron microscopy and atom force microscopy (AFM) has to be used to elucidate film morphology and the underlying molecular structure. Here, the thin films were investigated using AFM, optical microscopy and polarized absorption spectroscopy. It was shown that by using numerical method for treating the polarized absorption spectroscopy data, the molecular structure can be elucidated. Further, it was shown that polarized optical spectroscopy is a general tool that allows determination of the molecular order in thin films. Finally, it was found that full control of thermal history and rigorous control of the ionic self-assembly conditions are required to reproducibly make these materials of high nanoscopic order. Similarly, the conditions for spin-casting are shown to be determining for the overall thin film morphology, while molecular order is maintained.

Microwave signal-processing applications of HTS films

NASA Astrophysics Data System (ADS)

Adam, J. D.; Wagner, G. R.

1990-01-01

The low surface resistance (Rs) of high-temperature superconductors (HTS) will lead to the development of passive microwave devices for application in radar, electronic warfare, and satellite systems with performance significantly better than achieved with normal conductors. In particular, delay line based devices such as phase shifters, convolvers, and correlators will have low lossses and multi-GHz bandwidths. Low-loss filters which presently occupy cubic feet in waveguide will be fabricated in compact microstrip or stripline, and ultra-high Q resonators which currently require liquid helium refrigeration will be operated at around 77 K. Measurement of Rs of HTS is important both for device design and for optimization of the film growth process. Several approaches have been developed which provide data over a wide range of frequency and temperature, including stripline, cacity, and dielectric resonator techniques. HTS films for microwave applications should have at least Rs(HTS(film surfaces. In order to achieve this the film should be epitaxial with their c-axis normal to the film. YBCO films with c-axis normal produced by laser ablation have the lowest reported surface resistance of 8 mΩ at 86.7 GHz and 77 K, which is as good as Nb at the same reduced temperature.

Thin Film Delamination Using a High Power Pulsed Laser Materials Interaction

NASA Astrophysics Data System (ADS)

Sherman, Bradley

Thin films attached to substrates are only effective while the film is adhered to the substrate. When the film begins to spall the whole system can fail, thus knowing the working strength of the film substrate system is important when designing structures. Surface acoustic waves (SAWs) are suitable for characterization of thin film mechanical properties due to the confinement of their energy within a shallow depth from a material surface. In this project, we study the feasibility of inducing dynamic interfacial failure in thin films using surface waves generated by a high power pulsed laser. Surface acoustic waves are modeled using a finite element numerical code, where the ablative interaction between the pulsed laser and the incident film is modeled using equivalent surface mechanical stresses. The numerical results are validated using experimental results from a laser ultrasonic setup. Once validated the normal film-substrate interfacial stress can be extracted from the numerical code and tends to be in the mega-Pascal range. This study uses pulsed laser generation to produce SAW in various metallic thin film/substrate systems. Each system varies in its response based on its dispersive relationship and as such requires individualized numerical modeling to match the experimental data. In addition to pulsed SAW excitation using an ablative source, a constrained thermo-mechanical load produced by the ablation of a metal film under a polymer layer is explored to generate larger dynamic mechanical stresses. These stresses are sufficient to delaminate the thin film in a manner similar to a peel test. However, since the loading is produced by a pulsed laser source, it occurs at a much faster rate, limiting the influence of slower damage modes that are present in quasi-static loading. This approach is explored to predict the interfacial fracture toughness of weak thin film interfaces.

A continuous process for the development of Kodak Aerochrome Infrared Film 2443 as a negative

NASA Astrophysics Data System (ADS)

Klimes, D.; Ross, D. I.

1993-02-01

A process for the continuous dry-to-dry development of Kodak Aerochrome Infrared Film 2443 as a negative (CIR-neg) is described. The process is well suited for production processing of long film lengths. Chemicals from three commercial film processes are used with modifications. Sensitometric procedures are recommended for the monitoring of processing quality control. Sensitometric data and operational aerial exposures indicate that films developed in this process have approximately the same effective aerial film speed as films processed in the reversal process recommended by the manufacturer (Kodak EA-5). The CIR-neg process is useful when aerial photography is acquired for resources management applications which require print reproductions. Originals can be readily reproduced using conventional production equipment (electronic dodging) in black and white or color (color compensation).

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Films of Carbon Nanomaterials for Transparent Conductors

PubMed Central

Ho, Xinning; Wei, Jun

2013-01-01

The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted. There is an interest in films of carbon nanomaterials such as, carbon nanotubes and graphene as they exhibit outstanding properties. This article reviews the synthesis and assembly of these films and their post-treatment. These processes determine the film performance and understanding of this platform will be useful for future work to improve the film performance. PMID:28809267

Process optimization of ultrasonic spray coating of polymer films.

PubMed

Bose, Sanjukta; Keller, Stephan S; Alstrøm, Tommy S; Boisen, Anja; Almdal, Kristoffer

2013-06-11

In this work we have performed a detailed study of the influence of various parameters on spray coating of polymer films. Our aim is to produce polymer films of uniform thickness (500 nm to 1 μm) and low roughness compared to the film thickness. The coatings are characterized with respect to thickness, roughness (profilometer), and morphology (optical microscopy). Polyvinylpyrrolidone (PVP) is used to do a full factorial design of experiments with selected process parameters such as temperature, distance between spray nozzle and substrate, and speed of the spray nozzle. A mathematical model is developed for statistical analysis which identifies the distance between nozzle and substrate as the most significant parameter. Depending on the drying of the sprayed droplets on the substrate, we define two broad regimes, "dry" and "wet". The optimum condition of spraying lies in a narrow window between these two regimes, where we obtain a film of desired quality. Both with increasing nozzle-substrate distance and temperature, the deposition moves from a wet state to a dry regime. Similar results are also achieved for solvents with low boiling points. Finally, we study film formation during spray coating with poly (D,L-lactide) (PDLLA). The results confirm the processing knowledge obtained with PVP and indicate that the observed trends are identical for spraying of other polymer films.

Integrating image processing and classification technology into automated polarizing film defect inspection

NASA Astrophysics Data System (ADS)

Kuo, Chung-Feng Jeffrey; Lai, Chun-Yu; Kao, Chih-Hsiang; Chiu, Chin-Hsun

2018-05-01

In order to improve the current manual inspection and classification process for polarizing film on production lines, this study proposes a high precision automated inspection and classification system for polarizing film, which is used for recognition and classification of four common defects: dent, foreign material, bright spot, and scratch. First, the median filter is used to remove the impulse noise in the defect image of polarizing film. The random noise in the background is smoothed by the improved anisotropic diffusion, while the edge detail of the defect region is sharpened. Next, the defect image is transformed by Fourier transform to the frequency domain, combined with a Butterworth high pass filter to sharpen the edge detail of the defect region, and brought back by inverse Fourier transform to the spatial domain to complete the image enhancement process. For image segmentation, the edge of the defect region is found by Canny edge detector, and then the complete defect region is obtained by two-stage morphology processing. For defect classification, the feature values, including maximum gray level, eccentricity, the contrast, and homogeneity of gray level co-occurrence matrix (GLCM) extracted from the images, are used as the input of the radial basis function neural network (RBFNN) and back-propagation neural network (BPNN) classifier, 96 defect images are then used as training samples, and 84 defect images are used as testing samples to validate the classification effect. The result shows that the classification accuracy by using RBFNN is 98.9%. Thus, our proposed system can be used by manufacturing companies for a higher yield rate and lower cost. The processing time of one single image is 2.57 seconds, thus meeting the practical application requirement of an industrial production line.

ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

DOE PAGES

Huso, Jesse; Morrison, John L.; Che, Hui; ...

2011-01-01

An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.; Potember, Richard S.

1991-01-01

The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

The cognitive processing of film and musical soundtracks.

PubMed

Boltz, Marilyn G

2004-10-01

Previous research has demonstrated that musical soundtracks can influence the interpretation, emotional impact, and remembering of film information. The intent here was to examine how music is encoded into the cognitive system and subsequently represented relative to its accompanying visual action. In Experiment 1, participants viewed a set of music/film clips that were either congruent or incongruent in their emotional affects. Selective attending was also systematically manipulated by instructing viewers to attend to and remember the music, film, or both in tandem. The results from tune recognition, film recall, and paired discrimination tasks collectively revealed that mood-congruent pairs lead to a joint encoding of music/film information as well as an integrated memory code. Incongruent pairs, on the other hand, result in an independent encoding in which a given dimension, music or film, is only remembered well if it was selectively attended to at the time of encoding. Experiment 2 extended these findings by showing that tunes from mood-congruent pairs are better recognized when cued by their original scenes, while those from incongruent pairs are better remembered in the absence of scene information. These findings both support and extend the "Congruence Associationist Model" (A. J. Cohen, 2001), which addresses those cognitive mechanisms involved in the processing of music/film information.

Synthesis of Iminodiacetate Functionalized Polypropylene Films and Their Efficacy as Antioxidant Active-Packaging Materials.

PubMed

Lin, Zhuangsheng; Roman, Maxine J; Decker, Eric A; Goddard, Julie M

2016-06-08

The introduction of metal-chelating ligands to the food-contact surface of packaging materials may enable the removal of synthetic chelators (e.g., ethylenediamine tetra-acetic acid (EDTA)) from food products. In this study, the metal-chelating ligand iminodiacetate (IDA) was covalently grafted onto polypropylene surfaces to produce metal-chelating active-packaging films. The resulting films were able to chelate 138.1 ± 26 and 210.0 ± 28 nmol/cm(2) Fe(3+) and Cu(2+) ions, respectively, under acidic conditions (pH 3.0). The films demonstrated potent antioxidant efficacy in two model food systems. In an emulsified-oil system, the chelating materials extended the lag phase of both lipid hydroperoxide and hexanal formation from 5 to 25 days and were as effective as EDTA. The degradation half-life of ascorbic acid in an aqueous solution was extended from 5 to 14 days. This work demonstrates the potential application of surface-grafted chelating IDA ligands as effective antioxidant active food-packaging materials.

Applications of Thin Film Thermocouples for Surface Temperature Measurement

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Holanda, Raymond

1994-01-01

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Effects of sol-gel processing parameters on the phases and microstructures of HA films.

PubMed

Wang, Diangang; Chen, Chuanzhong; Liu, Xiuna; Lei, Tingquan

2007-06-15

Bioactive hydroxyapatite (HA) films were fabricated by a sol-gel method and triethylphosphate and calcium nitrate were used as the phosphorus and calcium precursors, respectively. The effects of the heat treatment temperature, pH level and substrate materials on the phases and microstructures of HA films were studied by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and electronic probe microanalysis (EPMA) and so on. The results show that all the sol-gel films are composed of the phases of HA, CaO, TiO(2) and CaTiO(3). With increasing the calcining temperature, the crystallinity of the films increases, the structure becomes more compact and changes from granular and lamellar to cellular structure, and the Ca/P ratio increases slightly because of the loss of P in the films. The addition of ammonia (adjusting the pH level to be about 7.5) can increase the HA content in the films, and the difference of substrate materials only has a little influence on the microstructure of the sol-gel films.

Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

PubMed

Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

2015-05-20

Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Ti film deposition process of a plasma focus: Study by an experimental design

NASA Astrophysics Data System (ADS)

Inestrosa-Izurieta, M. J.; Moreno, J.; Davis, S.; Soto, L.

2017-10-01

The plasma generated by plasma focus (PF) devices have substantially different physical characteristics from another plasma, energetic ions and electrons, compared with conventional plasma devices used for plasma nanofabrication, offering new and unique opportunities in the processing and synthesis of Nanomaterials. This article presents the use of a plasma focus of tens of joules, PF-50J, for the deposition of materials sprayed from the anode by the plasma dynamics in the axial direction. This work focuses on the determination of the most significant effects of the technological parameters of the system on the obtained depositions through the use of a statistical experimental design. The results allow us to give a qualitative understanding of the Ti film deposition process in our PF device depending on four different events provoked by the plasma dynamics: i) an electric erosion of the outer material of the anode; ii) substrate ablation generating an interlayer; iii) electron beam deposition of material from the center of the anode; iv) heat load provoking clustering or even melting of the deposition surface.

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

Metal Nanoparticles Embedded in Cellulose Nanocrystal Based Films: Material Properties and Post-use Analysis.

PubMed

Lizundia, Erlantz; Goikuria, Uribarri; Vilas, José Luis; Cristofaro, Francesco; Bruni, Giovanna; Fortunati, Elena; Armentano, Ilaria; Visai, Livia; Torre, Luigi

2018-04-25

The dispersion of nanoparticles having different size-, shape-, and composition-dependent properties is an exciting approach to design and synthesize multifunctional materials and devices. This work shows a detailed investigation of the preparation and properties of free-standing nanocomposite films based on cellulose nanocrystals (CNC) loaded with three different types of metal nanoparticles. CNC-based nanocomposites having zinc oxide (ZnO), titanium dioxide (TiO 2 ), and silver oxide (Ag 2 O) have been obtained through evaporation-induced self-assembly (EISA) in acqueous solution. Morphological and optical characteristics, chemical properties, wettability, and antimicrobial assays of the produced films were conducted. Furthermore, disintegrability in composting condition of CNC based nanocomposites was here investigated for the first time. The morphological observations revealed the formation of a chiral nematic structure with uniformly distributed nanoparticles. The bionanocomposite films based on the metal nanoparticles had effective antimicrobial activity, killing both Escherichia coli RB ( E. coli RB) and Staphylococcus aureus 8325-4 ( S. aureus 8325-4). The simplicity method of film preparation, the large quantity of cellulose in the world, and the free-standing nature of the nanocomposite films offer highly advantageous characteristics that can for the new development of multifunctional materials.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Nonlinear optical thin films

NASA Technical Reports Server (NTRS)

Leslie, Thomas M.

1993-01-01

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

Active biodegradable films produced with blends of rice flour and poly(butylene adipate co-terephthalate): effect of potassium sorbate on film characteristics.

PubMed

Sousa, G M; Soares Júnior, M S; Yamashita, F

2013-08-01

The objective of work was to produce and characterize biodegradable films from rice flour, poly(butylene adipate co-terephthalate) (PBAT), glycerol and potassium sorbate, for application as active packaging for fresh lasagna pasta. The films were evaluated with respect to their optical, water vapor barrier, mechanical and microstructural properties. The mechanical properties and microstructure were evaluated after use as packaging material for fresh pasta for 45 days at 7°C. The blends of rice flour, PBAT, glycerol and potassium sorbate showed good processability and allowed for the pilot scale production of films by blow extrusion process. The addition of 1 to 5% potassium sorbate as plasticizer agent of films in place of glycerol did not alter the film mechanical properties and a sorbate concentration greater or equal than 3% reduced the opacity, although increasing the water vapor permeability. The films could be used as active packaging for fresh food pasta, since they remained integral and easy to handle after application. The rice flour was shown to be an excellent material for the formulation of biodegradable films, since it is a low-cost raw material from a renewable source. The addition of potassium sorbate did not affect the extrusion process, and could be used in the production of packaging for use with foods. Copyright © 2013 Elsevier B.V. All rights reserved.

Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

NASA Astrophysics Data System (ADS)

Pedarnig, Johannes D.

2010-10-01

New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

Physical and biological properties of a novel anti-adhesion material made of thermally cross-linked gelatin film: Investigation of the usefulness as anti-adhesion material.

PubMed

Horii, Tsunehito; Tsujimoto, Hiroyuki; Miyamoto, Hiroe; Yamanaka, Koki; Tanaka, Shota; Torii, Hiroko; Ozamoto, Yuki; Takamori, Hideki; Nakamachi, Eiji; Ikada, Yoshito; Hagiwara, Akeo

2018-02-01

To create more useful, effective and safer anti-adhesion materials, we developed a thermally cross-linked gelatin film. In this study, we examined the physical properties of the film such as the physical strength and the adhesiveness to reveal the handling properties and biological properties, such as the anti-adhesion effect, the influence on cell proliferation, and the cytotoxicity to reveal the anti-adhesion mechanism, especially in comparison with the conventional hyaluronic acid and carboxymethylcellulose film (the conventional film). A tensile test under dry and wet conditions and shearing stress test showed that the gelatin film has significant higher maximum tensile stress and fracture strain than the conventional film. In the study using a rat model of cecum adhesion, the anti-adhesion effect of the gelatin film was significantly superior to that of the conventional film. In the cell proliferation test, the number of fibroblast cells on the gelatin film increased at each time point, while no cell proliferation was observed on the conventional film. Furthermore, in the cytotoxicity test using a colony assay and Live/Dead assay, the extract of the gelatin film had no cytotoxicity, while the extract of the conventional film had cytotoxicity considerably. These results suggest that the gelatin film provides better handling than the conventional film, due to better physical strength and ductility of the film. In addition, the gelatin film has a significantly greater anti-adhesion effect than the conventional film without any cytotoxicity. Therefore, the gelatin film is quite favorable as an anti-adhesion material. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 106B: 689-696, 2018. © 2017 Wiley Periodicals, Inc.

Fabrication of Cu2ZnSn(S,Se)4 (CZTSSe) absorber films based on solid-phase synthesis and blade coating processes

NASA Astrophysics Data System (ADS)

Ma, Ruixin; Yang, Fan; Li, Shina; Zhang, Xiaoyong; Li, Xiang; Cheng, Shiyao; Liu, Zilin

2016-04-01

CZTSSe is an important earth abundant collection of materials for the development of low cost and high efficiency thin film solar cells. This work developed a simple non-vacuum-based route to fabricate CZTSSe absorber films. This was demonstrated by first synthesizing Cu2ZnSnS4 (CZTS) nano-crystalline based on solid-phase synthesis. Then a stable colloidal ink composed of CZTS nano-crystalline was blade coated on Mo-coated substrates followed by an annealing process under Ar atmosphere. After CZTS films formation, the films were sintered into CZTSSe absorber films by exposing them under Selenium vapor. The formation of a kesterite type CZTS was confirmed using X-ray diffraction and Raman scattering measurements. The band gap of CZTSSe absorber films was determined to be 1.26 eV, which was appropriate for use as an absorber layer in thin film solar cells. The CZTSSe absorber films showed a good photovoltatic performance, demonstrating this simple approach had great potential for CZTSSe solar cell production.

Enhancing performing characteristics of organic semiconducting films by improved solution processing

DOEpatents

Bazan, Guillermo C; Moses, Daniel; Peet, Jeffrey; Heeger, Alan J

2014-05-13

Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

C60 as an Active Smart Spacer Material on Silver Thin Film Substrates for Enhanced Surface Plasmon Coupled Emission

PubMed Central

Mulpur, Pradyumna; Podila, Ramakrishna; Ramamurthy, Sai Sathish; Kamisetti, Venkataramaniah; Rao, Apparao M.

2015-01-01

In this study, we present the use of C60 as an active spacer material on a silver (Ag) based surface plasmon coupled emission (SPCE) platform. In addition to its primary role of protecting the Ag thin film from oxidation, the incorporation of C60 facilitated the achievement of 30-fold enhancement in the emission intensity of rhodamine b (RhB) fluorophore. The high signal yield was attributed to the unique π-π interactions between C60 thin films and RhB, which enabled efficient transfer of energy of RhB emission to Ag plasmon modes. Furthermore, minor variations in the C60 film thickness yielded large changes in the enhancement and angularity properties of the SPCE signal, which can be exploited for sensing applications. Finally, the low-cost fabrication process of the Ag-C60 thin film stacks render C60 based SPCE substrates ideal, for the economic and simplistic detection of analytes. PMID:25785916

Reinforced cassava starch based edible film incorporated with essential oil and sodium bentonite nanoclay as food packaging material.

PubMed

Iamareerat, Butsadee; Singh, Manisha; Sadiq, Muhammad Bilal; Anal, Anil Kumar

2018-05-01

Biodegradable packaging in food materials is a green technology based novel approach to replace the synthetic and conventional packaging systems. This study is aimed to formulate the biodegradable cassava starch based films incorporated with cinnamon essential oil and sodium bentonite clay nanoparticles. The films were characterized for their application as a packaging material for meatballs. The cassava starch films incorporated with sodium bentonite and cinnamon oil showed significant antibacterial potential against all test bacteria; Escherichia coli , Salmonella typhimurium and Staphylococcus aureus. Antibacterial effect of films increased significantly when the concentration of cinnamon oil was increased. The cassava starch film incorporated with 0.75% (w/w) sodium bentonite, 2% (w/w) glycerol and 2.5% (w/w) cinnamon oil was selected based on physical, mechanical and antibacterial potential to evaluate shelf life of meatballs. The meatballs stored at ambient temperature in cassava starch film incorporated with cinnamon oil and nanoclay, significantly inhibited the microbial growth till 96 h below the FDA limits (10 6  CFU/g) in foods compared to control films that exceeded above the limit within 48 h. Hence cassava starch based film incorporated with essential oils and clay nanoparticles can be an alternate approach as a packaging material for food industries to prolong the shelf life of products.

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

NASA Astrophysics Data System (ADS)

Grave, Daniel A.

Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

Chemical processing of lunar materials

NASA Technical Reports Server (NTRS)

Criswell, D. R.; Waldron, R. D.

1979-01-01

The paper highlights recent work on the general problem of processing lunar materials. The discussion covers lunar source materials, refined products, motivations for using lunar materials, and general considerations for a lunar or space processing plant. Attention is given to chemical processing through various techniques, including electrolysis of molten silicates, carbothermic/silicothermic reduction, carbo-chlorination process, NaOH basic-leach process, and HF acid-leach process. Several options for chemical processing of lunar materials are well within the state of the art of applied chemistry and chemical engineering to begin development based on the extensive knowledge of lunar materials.

Hierarchical structure graphitic-like/MoS2 film as superlubricity material

NASA Astrophysics Data System (ADS)

Gong, Zhenbin; Jia, Xiaolong; Ma, Wei; Zhang, Bin; Zhang, Junyan

2017-08-01

Friction and wear result in a great amount of energy loss and the invalidation of mechanical parts, thus it is necessary to minimize friction in practical application. In this study, the graphitic-like/MoS2 films with hierarchical structure were synthesized by the combination of pulse current plasma chemical-vapor deposition and medium frequency unbalanced magnetron sputtering in preheated environment. This hierarchical structure composite with multilayer nano sheets endows the films excellent tribological performance, which easily achieves macro superlubricity (friction coefficient ∼0.004) under humid air. Furthermore, it is expected that hierarchical structure of graphitic-like/MoS2 films could match the requirements of large scale, high bear-capacity and wear-resistance of actual working conditions, which could be widely used in the industrial production as a promising superlubricity material.

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries

NASA Astrophysics Data System (ADS)

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-01

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g-1 and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

PubMed Central

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-01-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100–200 kHz and in the temperature range of 25–300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C−1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature. PMID:27827436

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability.

PubMed

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-09

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (T g ) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C -1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

NASA Astrophysics Data System (ADS)

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C-1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

NASA Astrophysics Data System (ADS)

Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

2016-10-01

This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

Universality in the nonlinear leveling of capillary films

NASA Astrophysics Data System (ADS)

Zheng, Zhong; Fontelos, Marco A.; Shin, Sangwoo; Stone, Howard A.

2018-03-01

Many material science, coating, and manufacturing problems involve liquid films where defects that span the film thickness must be removed. Here, we study the surface-tension-driven leveling dynamics of a thin viscous film following closure of an initial hole. The dynamics of the film shape is described by a nonlinear evolution equation, for which we obtain a self-similar solution. The analytical results are verified using time-dependent numerical and experimental results for the profile shapes and the minimum film thickness at the center. The universal behavior we identify can be useful for characterizing the time evolution of the leveling process and estimating material properties from experiments.

Photo-thermal processing of semiconductor fibers and thin films

NASA Astrophysics Data System (ADS)

Gupta, Nishant

Furnace processing and rapid thermal processing (RTP) have been an integral part of several processing steps in semiconductor manufacturing. The performance of RTP techniques can be improved many times by exploiting quantum photo-effects of UV and vacuum ultraviolet (VUV) photons in thermal processing and this technique is known as rapid photo-thermal processing (RPP). As compared to furnace processing and RTP, RPP provides higher diffusion coefficient, lower stress and lower microscopic defects. In this work, a custom designed automated photo assisted processing system was built from individual parts and an incoherent light source. This photo-assisted processing system is used to anneal silica clad silicon fibers and deposit thin-films. To the best of our knowledge, incoherent light source based rapid photo-thermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination, Raman spectroscopy and electrical measurements showed a considerable enhancement of structural and crystalline properties of RPP treated silicon fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers. To explore further applications of RPP, thin-films of Calcium Copper Titanate (CaCu3Ti4O12) or CCTO and Copper (I) Oxide (Cu2O) were also deposited using photo-assisted metal-organic chemical vapor deposition (MOCVD) on Si/SiO2 and n-Si substrate respectively. CCTO is one of the most researched giant dielectric constant materials in recent years. The given photo-assisted MOCVD approach provided polycrystalline CCTO growth on a SiO2 surface with grain sizes as large as 410 nm. Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

NASA Astrophysics Data System (ADS)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Effect of processing time delay on the dose response of Kodak EDR2 film.

PubMed

Childress, Nathan L; Rosen, Isaac I

2004-08-01

Kodak EDR2 film is a widely used two-dimensional dosimeter for intensity modulated radiotherapy (IMRT) measurements. Our clinical use of EDR2 film for IMRT verifications revealed variations and uncertainties in dose response that were larger than expected, given that we perform film calibrations for every experimental measurement. We found that the length of time between film exposure and processing can affect the absolute dose response of EDR2 film by as much as 4%-6%. EDR2 films were exposed to 300 cGy using 6 and 18 MV 10 x 10 cm2 fields and then processed after time delays ranging from 2 min to 24 h. An ion chamber measured the relative dose for these film exposures. The ratio of optical density (OD) to dose stabilized after 3 h. Compared to its stable value, the film response was 4%-6% lower at 2 min and 1% lower at 1 h. The results of the 4 min and 1 h processing time delays were verified with a total of four different EDR2 film batches. The OD/dose response for XV2 films was consistent for time periods of 4 min and 1 h between exposure and processing. To investigate possible interactions of the processing time delay effect with dose, single EDR2 films were irradiated to eight different dose levels between 45 and 330 cGy using smaller 3 x 3 cm2 areas. These films were processed after time delays of 1, 3, and 6 h, using 6 and 18 MV photon qualities. The results at all dose levels were consistent, indicating that there is no change in the processing time delay effect for different doses. The difference in the time delay effect between the 6 and 18 MV measurements was negligible for all experiments. To rule out bias in selecting film regions for OD measurement, we compared the use of a specialized algorithm that systematically determines regions of interest inside the 10 x 10 cm2 exposure areas to manually selected regions of interest. There was a maximum difference of only 0.07% between the manually and automatically selected regions, indicating that the use of

Solution-processed BiI 3 thin films for photovoltaic applications: Improved carrier collection via solvent annealing

DOE PAGES

Hamdeh, Umar H.; Nelson, Rainie D.; Ryan, Bradley J.; ...

2016-08-26

Here, we report all-inorganic solar cells based on solution-processed BiI 3. Two-electron donor solvents such as tetrahydrofuran and dimethylformamide were found to form adducts with BiI 3, which make them highly soluble in these solvents. BiI 3 thin films were deposited by spin-coating. Solvent annealing BiI 3 thin films at relatively low temperatures (≤100 °C) resulted in increased grain size and crystallographic reorientation of grains within the films. The BiI3 films were stable against oxidation for several months and could withstand several hours of annealing in air at temperatures below 150 °C without degradation. Surface oxidation was found to improvemore » photovoltaic device performance due to the formation of a BiOI layer at the BiI 3 surface which facilitated hole extraction. Nonoptimized BiI 3 solar cells achieved the highest power conversion efficiencies of 1.0%, demonstrating the potential of BiI 3 as a nontoxic, air-stable metal-halide absorber material for photovoltaic applications.« less

Surface self-organization in multilayer film coatings

NASA Astrophysics Data System (ADS)

Shuvalov, Gleb M.; Kostyrko, Sergey A.

2017-12-01

It is a recognized fact that during film deposition and subsequent thermal processing the film surface evolves into an undulating profile. Surface roughness affects many important aspects in the engineering application of thin film materials such as wetting, heat transfer, mechanical, electromagnetic and optical properties. To accurately control the morphological surface modifications at the micro- and nanoscale and improve manufacturing techniques, we design a mathematical model of the surface self-organization process in multilayer film materials. In this paper, we consider a solid film coating with an arbitrary number of layers under plane strain conditions. The film surface has a small initial perturbation described by a periodic function. It is assumed that the evolution of the surface relief is governed by surface and volume diffusion. Based on Gibbs thermodynamics and linear theory of elasticity, we present a procedure for constructing a governing equation that gives the amplitude change of the surface perturbation with time. A parametric study of the evolution equation leads to the definition of a critical undulation wavelength that stabilizes the surface. As a numerical result, the influence of geometrical and physical parameters on the morphological stability of an isotropic two-layered film coating is analyzed.

Optimization and testing of solid thin film lubrication deposition processes

NASA Astrophysics Data System (ADS)

Danyluk, Michael J.

A novel method for testing solid thin films in rolling contact fatigue (RCF) under ultra-high vacuum (UHV) and high rotational speeds (130 Hz) is presented in this thesis. The UHV-RCF platform is used to quantify the adhesion and lubrication aspects of two thin film coatings deposited on ball-bearings using a physical vapor deposition ion plating process. Plasma properties during ion plating were measured using a Langmuir probe and there is a connection between ion flux, film stress, film adhesion, process voltage, pressure, and RCF life. The UHV-RCF platform and vacuum chamber were constructed using off-the-shelf components and 88 RCF tests in high vacuum have been completed. Maximum RCF life was achieved by maintaining an ion flux between 10 13 to 1015 (cm-2 s-1) with a process voltage and pressure near 1.5 kV and 15 mTorr. Two controller schemes were investigated to maintain optimal plasma conditions for maximum RCF life: PID and LQR. Pressure disturbances to the plasma have a detrimental effect on RCF life. Control algorithms that mitigate pressure and voltage disturbances already exist. However, feedback from the plasma to detect disturbances has not been explored related to deposition processes in the thin-film science literature. Manometer based pressure monitoring systems have a 1 to 2 second delay time and are too slow to detect common pressure bursts during the deposition process. Plasma diagnostic feedback is much faster, of the order of 0.1 second. Plasma total-current feedback was used successfully to detect a typical pressure disturbance associated with the ion plating process. Plasma current is related to ion density and process pressure. A real-time control application was used to detect the pressure disturbance by monitoring plasma-total current and converting it to feedback-input to a pressure control system. Pressure overshoot was eliminated using a nominal PID controller with feedback from a plasma-current diagnostic measurement tool.

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Heat for film processing from solar energy

NASA Technical Reports Server (NTRS)

1981-01-01

Report describes solar water heating system for laboratory in Mill Valley, California. System furnishes 59 percent of hot water requirements for photographic film processing. Text of report discusses system problems and modifications, analyzes performance and economics, and supplies drawings and operation/maintenance manual.

High Tc superconducting materials and devices

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1990-01-01

The high Tc Y1Ba2Cu3O(7-x) ceramic materials, initially developed in 1987, are now being extensively investigated for a variety of engineering applications. The superconductor applications which are presently identified as of most interest to NASA-LaRC are low-noise, low thermal conductivity grounding links; large-area linear Meissner-effect bearings; and sensitive, low-noise sensors and leads. Devices designed for these applications require the development of a number of processing and fabrication technologies. Included among the technologies most specific to the present needs are tapecasting, melt texturing, magnetic field grain alignment, superconductor/polymer composite fabrication, thin film MOD (metal-organic decomposition) processing, screen printing of thick films, and photolithography of thin films. The overall objective of the program was to establish a high Tc superconductivity laboratory capability at NASA-LaRC and demonstrate this capability by fabricating superconducting 123 material via bulk and thin film processes. Specific objectives include: order equipment and set up laboratory; prepare 1 kg batches of 123 material via oxide raw material; construct tapecaster and tapecaster 123 material; fabricate 123 grounding link; fabricate 123 composite for Meissner linear bearing; develop 123 thin film processes (nitrates, acetates); establish Tc and Jc measurement capability; and set up a commercial use of space program in superconductivity at LaRC. In general, most of the objectives of the program were met. Finally, efforts to implement a commercial use of space program in superconductivity at LaRC were completed and at least two industrial companies have indicated their interest in participating.

Structure-processing-property correlations in thin films of conjugated polymer nanocomposites and blends

NASA Astrophysics Data System (ADS)

Sreeram, Arvind

Conjugated polymers have found several applications in recent years, in energy conversion and storage devices such as organic light emitting diodes, solar cells, batteries, and super capacitors. Thin films of polymers used for these applications need to be mechanically and thermally stable to withstand the harsh operating conditions. Although there is significant information on the optoelectronic properties of many of these polymers, there are only few studies on their mechanical properties. There is little information in the literature on how processing of these films influence mechanical properties. In the first part of this study, poly(p-phenylene vinylene) (PPV) films were prepared by thermolytic conversion of poly[p -phenylene (tetrahydrothiophenium)ethylene chloride] precursor films, at different temperatures and the kinetics of reaction was investigated using thermogravimetry and Fourier transform infrared (FTIR) spectroscopy. The mechanical properties of the films, studied using nanoindentation, showed a dependence on the extent of conversion and chemical composition of the films. The presence of chemical defects (e.g., carbonyl groups, detected using FTIR spectroscopy), was also found to have a noticeable effect on the modulus and hardness of the films. The storage modulus, E', and plasticity decreased with an increase in conversion, whereas the loss modulus, E", showed the opposite trend. Both the precursor and the fully-converted PPV films were found to have significantly lower E" than E', consistent with the glassy nature of the polymers at room temperature. In the second part of the study, polyacetylene films were synthesized by acid-catalyzed dehydration reaction of poly(vinyl alcohol) (PVA) precursor films. The kinetics of this reaction was monitored by thermogravimetry. The chemical structure of the conjugated polymer films was characterized by Raman and IR spectroscopy. Polyacetylene films incorporated with 1-propyl-3-methylimidazolium ionic liquid

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

Self-assembled materials and devices that process light

NASA Astrophysics Data System (ADS)

Zhu, Peiwang; Kang, Hu; van der Boom, Milko E.; Liu, Zhifu; Xu, Guoyang; Ma, Jing; Zhou, Delai; Ho, Seng-Tiong; Marks, Tobin J.

2004-12-01

Self-assembled superlattices (SASs) are intrinsically acentric and highly cross-linked structures. For organic electro-optics, they offer great advantages such as not requiring electric field poling for creating an acentric, EO-active microstructure and having excellent chemical, thermal, and orientational stabilities. In this paper, a greatly improved two-step all "wet-chemical" self-assembly (SA) approach is reported. Excellent radiation hardness of the SAS films is demonstrated by high-energy proton irradiation experiments. By introducing metal oxide nanolayers during SA, we show that the refractive indices of SAS films can be tuned over a wide range. Through special chromophore design, the optical absorption maxima of SAS films can also be greatly blue-shifted. Prototype waveguiding electro-optic modulators have been fabricated using the SAS films integrated with low-loss polymeric materials functioning as partial guiding and cladding layers. EO parameters such as the half-wave voltage and the effective electro-optic coefficient are reported.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Low energy electron beam processing of YBCO thin films

NASA Astrophysics Data System (ADS)

Chromik, Š.; Camerlingo, C.; Sojková, M.; Štrbík, V.; Talacko, M.; Malka, I.; Bar, I.; Bareli, G.; Jung, G.

2017-02-01

Effects of low energy 30 keV electron irradiation of superconducting YBa2Cu3O7-δ thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 - 4 × 1020 electrons/cm2, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 1020 electrons/cm2. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cusbnd O chains that results in increased carrier's concentration in superconducting CuO2 planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

Nanostructured manganese oxide thin films as electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Lai, Man On; Lu, Li

2011-01-01

Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

High-Quality LaVO3 Films as Solar Energy Conversion Material.

PubMed

Zhang, Hai-Tian; Brahlek, Matthew; Ji, Xiaoyu; Lei, Shiming; Lapano, Jason; Freeland, John W; Gopalan, Venkatraman; Engel-Herbert, Roman

2017-04-12

Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron-hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron-electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO 3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO 3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO 3 films compared to their nonstoichiometric counterparts. This work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.

Engineering materials properties and process technologies for electronic and energy applications

NASA Astrophysics Data System (ADS)

Hailey, Anna Kathryn

In this thesis, we pushed the boundaries of knowledge toward exciting new alternatives in the fields of electronic materials and energy. In Part 1, we focused on organic semiconductors, assessing how disorder on different length scales impacts the electrical properties in organic thin-film transistors (OTFTs). We first explored the effect of disorder at the molecular scale due to the coexistence of isomers in thin films. By blending fractional quantities of syn and anti isomers of triethylsilylethynyl anthradithiophene (TES ADT), we found that the electrical properties of devices comprising the anti isomer plummet to that of syn after the addition of only 10% syn. Through single-crystal computational analysis, we determined that the addition of syn disorders the two-dimensional electronic coupling between anti molecules, thereby increasing charge trapping and decreasing mobilities in OTFTs with increasing syn concentrations in the active layers. We also elucidated the impact of disorder stemming from boundaries between crystalline superstructures in polycrystalline thin films. By measuring the electrical characteristics of OTFTs across interspherulite boundaries (ISBs) in TES ADT and rubrene thin films, we found the energy barriers for charge transport across ISBs to be more akin to those found across the boundaries between polymer crystallites than between conventional molecular-semiconductor grains. In contrast to sharp, creviced grain boundaries, ISBs presumably comprise trapped molecules that electrically connect neighboring spherulites, as polymer chains connect crystallites in polymer-semiconductor thin films. In Part 2, we turned our focus to the production of alternative liquid fuels, evaluating process designs to produce "drop-in" replacement diesel and gasoline from non-food biomass and domestic natural gas. By considering the storage of captured byproduct CO2 in nearby depleted shale-gas wells, these processes produce liquid fuels with low

Ureasil-polyether hybrid film-forming materials.

PubMed

Souza, L K; Bruno, C H; Lopes, L; Pulcinelli, S H; Santilli, C V; Chiavacci, L A

2013-01-01

The objectives of this work were to study the suitability and highlight the advantages of the use of cross-linked ureasil-polyether hybrid matrices as film-forming systems. The results revealed that ureasil-polyethers are excellent film-forming systems due to specific properties, such as their biocompatibility, their cosmetic attractiveness for being able to form thin and transparent films, their short drying time to form films and their excellent bioadhesion compared to the commercial products known as strong adhesives. Rheological measurements have demonstrated the ability of these hybrid matrices to form a film in only a few seconds and Water Vapor Transmitting Rate (WVTR) showed adequate semi-occlusive properties suggesting that these films could be used as skin and wound protectors. Both the high skin bioadhesion and non-cytotoxic character seems to be improved by the presence of multiple amine groups in the hybrid molecules. Copyright © 2012 Elsevier B.V. All rights reserved.

Integrated 3D printing and corona poling process of PVDF piezoelectric films for pressure sensor application

NASA Astrophysics Data System (ADS)

Kim, Hoejin; Torres, Fernando; Wu, Yanyu; Villagran, Dino; Lin, Yirong; Tseng, Tzu-Liang(Bill

2017-08-01

This paper presents a novel process to fabricate piezoelectric films from polyvinylidene fluoride (PVDF) polymer using integrated fused deposition modeling (FDM) 3D printing and corona poling technique. Corona poling is one of many effective poling processes that has received attention to activate PVDF as a piezoelectric responsive material. The corona poling process occurs when a PVDF polymer is exposed to a high electric field created and controlled through an electrically charged needle and a grid electrode under heating environment. FDM 3D printing has seen extensive progress in fabricating thermoplastic materials and structures, including PVDF. However, post processing techniques such as poling is needed to align the dipoles in order to gain piezoelectric properties. To further simplify the piezoelectric sensors and structures fabrication process, this paper proposes an integrated 3D printing process with corona poling to fabricate piezoelectric PVDF sensors without post poling process. This proposed process, named ‘Integrated 3D Printing and Corona poling process’ (IPC), uses the 3D printer’s nozzle and heating bed as anode and cathode, respectively, to create poling electric fields in a controlled heating environment. The nozzle travels along the programmed path with fixed distance between nozzle tip and sample’s top surface. Simultaneously, the electric field between the nozzle and bottom heating pad promotes the alignment of dipole moment of PVDF molecular chains. The crystalline phase transformation and output current generated by printed samples under different electric fields in this process were characterized by a Fourier transform infrared spectroscopy and through fatigue load frame. It is demonstrated that piezoelectric PVDF films with enhanced β-phase percentage can be fabricated using the IPC process. In addition, mechanical properties of printed PVDF was investigated by tensile testing. It is expected to expand the use of additive

Analysis of glow discharges for understanding the process of film formation

NASA Technical Reports Server (NTRS)

Venugopalan, M.; Avni, R.

1984-01-01

The physical and chemical processes which occur during the formation of different types of films in a variety of glow discharge plasmas are discussed. Emphasis is placed on plasma diagnostic experiments using spectroscopic methods, probe analysis, mass spectrometric sampling and magnetic resonance techniques which are well suited to investigate the neutral and ionized gas phase species as well as some aspects of plasma surface interactions. The results on metallic, semi-conducting and insulating films are reviewed in conjunction with proposed models and the problem encountered under film deposition conditions. It is concluded that the understanding of film deposition process requires additional experimental information on plasma surface interactions of free radicals and the synergetic effects where photon, electron and ion bombardment change the reactivity of the incident radical with the surface.

Femtosecond laser processing of NiPd single and 5x(Ni/Pd) multilayer thin films

NASA Astrophysics Data System (ADS)

Petrović, S.; Gaković, B.; Zamfirescu, M.; Radu, C.; Peruško, D.; Radak, B.; Ristoscu, C.; Zdravković, S.; Luculescu, C. L.; Mihailescu, I. N.

2017-09-01

Modification of single and complex nickel-palladium samples by laser processing in the femtosecond time domain was studied. The samples were processed by focused Ti:Sapphire laser beam (Clark CPA-2101) with 775 nm laser wavelength, 2 kHz repetition rate, 200 fs pulse duration. The laser-induced morphological modifications have shown dependence on the applied fluences and number of laser pulses. The formed surface nanostructures on the single NiPd/Si and multilayer 5x(Ni/Pd)/Si systems are compared with individual Ni and Pd thin films. The results show an increase in surface roughness, formation of parallel periodic surface structures, appearance of hydrodynamic features and ablation of surface material. At low number of pulses (less than 10 pulses) and low pulse energies range (not over 1.7 μJ), the two types of laser-induced periodic surface structure (LIPSS) can be observed: low and high spatial frequency LIPSS (HSFL and LSFL). For all samples, the measured LSFL periods were 720 nm for the ripples created solely on thin film surfaces during the single pulse action. In the case of the multi-pulse irradiation, the periodicities of created LSFLs on the all investigated thin films have shown tendency to reduction with increasing of pulse energies.

Materials processing in space

NASA Technical Reports Server (NTRS)

1975-01-01

The feasibility and possible advantages of processing materials in a nongravitational field are considered. Areas of investigation include biomedical applications, the processing of inorganic materials, and flight programs and funding.

Process to form mesostructured films

DOEpatents

Brinker, C. Jeffrey; Anderson, Mark T.; Ganguli, Rahul; Lu, Yunfeng

1999-01-01

This invention comprises a method to form a family of supported films film with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts.

Liquid crystals for organic thin-film transistors

NASA Astrophysics Data System (ADS)

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

2015-04-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Organic electronic devices with multiple solution-processed layers

DOEpatents

Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

2015-08-04

A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

Mineralized agar-based nanocomposite films: Potential food packaging materials with antimicrobial properties.

PubMed

Malagurski, Ivana; Levic, Steva; Nesic, Aleksandra; Mitric, Miodrag; Pavlovic, Vladimir; Dimitrijevic-Brankovic, Suzana

2017-11-01

New mineralized, agar-based nanocomposite films (Zn-carbonate and Zn-phosphate/agar) were produced by a combination of in situ precipitation and a casting method. The presence of minerals significantly influenced the morphology, properties and functionality of the obtained nanocomposites. Reinforcement with the Zn-mineral phase improved the mechanical properties of the carbonate-mineralized films, but had a negligible effect on the phosphate-mineralized samples. Both nanocomposites showed improved optical and thermal properties, better Zn(II) release potential in a slightly acidic environment and exhibited antimicrobial activity against S. aureus. These results suggest that Zn-mineralized agar nanocomposite films could be potentially used as affordable, eco-friendly and active food packaging materials. Copyright © 2017 Elsevier Ltd. All rights reserved.

Impact of processing parameters on the haemocompatibility of Bombyx mori silk films.

PubMed

Seib, F Philipp; Maitz, Manfred F; Hu, Xiao; Werner, Carsten; Kaplan, David L

2012-02-01

Silk has traditionally been used for surgical sutures due to its lasting strength and durability; however, the use of purified silk proteins as a scaffold material for vascular tissue engineering goes beyond traditional use and requires application-orientated biocompatibility testing. For this study, a library of Bombyx mori silk films was generated and exposed to various solvents and treatment conditions to reflect current silk processing techniques. The films, along with clinically relevant reference materials, were exposed to human whole blood to determine silk blood compatibility. All substrates showed an initial inflammatory response comparable to polylactide-co-glycolide (PLGA), and a low to moderate haemostasis response similar to polytetrafluoroethylene (PTFE) substrates. In particular, samples that were water annealed at 25 °C for 6 h demonstrated the best blood compatibility based on haemostasis parameters (e.g. platelet decay, thrombin-antithrombin complex, platelet factor 4, granulocytes-platelet conjugates) and inflammatory parameters (e.g. C3b, C5a, CD11b, surface-associated leukocytes). Multiple factors such as treatment temperature and solvent influenced the biological response, though no single physical parameter such as β-sheet content, isoelectric point or contact angle accurately predicted blood compatibility. These findings, when combined with prior in vivo data on silk, support a viable future for silk-based vascular grafts. Copyright © 2011 Elsevier Ltd. All rights reserved.

Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications

NASA Astrophysics Data System (ADS)

Faÿ, S.; Shah, A.

Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.

A novel combined polyphenol-aldehyde crosslinking of collagen film-Applications in biomedical materials.

PubMed

Liu, Ting; Shi, Lu; Gu, Zhipeng; Dan, Weihua; Dan, Nianhua

2017-08-01

Despite its crucial role in directing cell fate in healthy and diseased tissues, improvements in physical-chemical properties and biocompatibility of type-I collagen are still needed. In this report, we described combined and facile method to modify collagen. The collagen film was first modified by procyanidins solution, in which, then subjected to further crosslinked by dialdehyde alginate, resulting in collagen-procyanidins-dialdehyde alginate film. The properties of the crosslinked collagen films were investigated and the results were discussed. Results from differential scanning calorimetry and thermo gravimetric analysis suggested that the thermal stabilities of the collagen-procyanidins-dialdehyde alginate film were significantly improved. The mechanical properties of collagen-procyanidins-dialdehyde alginate film in terms of elongation at break and tensile strength increased approximately 2-fold and 3-fold, respectively compare to pure collagen film. In addition, the resistance to collagenase degradation of collagen-procyanidins-dialdehyde alginate film was remarkably promoted. The results from methyltetrazolium assay and confocal laser scanning microscopy showed that no cytotoxicity of collagen film was introduced by the combined crosslinking method. Thus, the novel combined by procyanidins-dialdehyde alginate crosslinking method shown in this study provided a non-toxic and efficient crosslinking method that improved various properties of collagen film, which has great potential applications in biomedical materials. Copyright © 2017 Elsevier B.V. All rights reserved.

A new radiochromic dosimeter film

NASA Astrophysics Data System (ADS)

Sidney, L. N.; Lynch, D. C.; Willet, P. S.

By employing acid-sensitive leuco dyes in a chlorine-containing polymer matrix, a new radiochromic dosimeter film has been developed for gamma, electron beam, and ultraviolet radiation. These dosimeter films undergo a color change from colorless to royal blue, red fuchsia, or black, depending on dye selection, and have been characterized using a visible spectrophotometer over an absorbed dose range of 1 to 100 kGy. The primary features of the film are improved color stability before and after irradiation, whether stored in the dark or under artificial lights, and improved moisture resistance. The effects of absorbed dose, dose rate, and storage conditions on dosimeter performance are discussed. The dosimeter material may be produced as a free film or coated onto a transparent substrate and optionally backed with adhesive. Potential applications for these materials include gamma sterilization indicator films for food and medical products, electron beam dosimeters, and in-line radiation monitors for electron beam and ultraviolet processing.

Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

DOEpatents

Tarasevich, B.J.; Rieke, P.C.

1998-06-02

A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate. This can be accomplished by connecting the thin film to the underlying substrate by binding the thin film to the functional groups. 5 figs.

Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

DOEpatents

Tarasevich, Barbara J.; Rieke, Peter C.

1998-01-01

A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate. This can be accomplished by connecting the thin film to the underlying substrate by binding the thin film to the functional groups.

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Temperature dependent optical characterization of Ni-TiO2 thin films as potential photocatalytic material

NASA Astrophysics Data System (ADS)

De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Rao, K. Divakar; Singh, Ranveer; Som, T.; Sahoo, N. K.

2017-09-01

Along with other transition metal doped titanium dioxide materials, Ni-TiO2 is considered to be one of the most efficient materials for catalytic applications due to its suitable energy band positions in the electronic structure. The present manuscript explores the possibility of improving the photocatalytic activity of RF magnetron sputtered Ni-TiO2 films upon heat treatment. Optical, structural and morphological and photocatalytic properties of the films have been investigated in detail for as deposited and heat treated samples. Evolution of refractive index (RI) and total film thickness as estimated from spectroscopic ellipsometry characterization are found to be in agreement with the trend in density and total film thickness estimated from grazing incidence X-ray reflectivity measurement. Interestingly, the evolution of these macroscopic properties were found to be correlated with the corresponding microstructural modifications realized in terms of anatase to rutile phase transformation and appearance of a secondary phase namely NiTiO3 at high temperature. Corresponding morphological properties of the films were also found to be temperature dependent which leads to modifications in the grain structure. An appreciable reduction of optical band gap from 2.9 to 2.5 eV of Ni-TiO2 thin films was also observed as a result of post deposition heat treatment. Testing of photocatalytic activity of the films performed under UV illumination demonstrates heat treatment under atmospheric ambience to be an effective means to enhance the photocatalytic efficiency of transition metal doped titania samples.

Advances in Thin Film Thermocouple Durability Under High Temperature and Pressure Testing Conditions

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Fralick, Gustave C.; Taylor, Keith F.

1999-01-01

Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition

[Evaluation of preexposed step wedges in acceptance tests of film processing in mammography].

PubMed

Blendl, C

2003-03-01

It was tested with 5 different types of mammography films in which manner the values of "Lightspeed" (LS) and "Lightcontrast" (LC), according DIN V 6868-55 will be changed, when preexposed film strips are used, stored at different climates and spaces of time in comparison to strips, which are exposed immediately before processing. It was proved, that the value LS of preexposed film strips in general will be lowered with increasing storage time compared to freshly exposed film strips, when both strips are processed simultaneously. This drift will be enhanced with increasing rel.humidity levels during storage. The value of LC increases in general with longer storage time and higher rel.humidity levels. The tested film types have all individual drifts in LS and LC. The precision of a single measurement using preexposed film strips was established over all different types of films at in about: Delta LS=0.06 and Delta LC (%)=16% [in the borders of 2 sigma (sigma)]. This uncertainty includes solely the precision of sensitometer, densitometer, the method to establish sensitometric values and unavoidable statistical fluctuations. Even when the systematic drift of the used film type is well established, the required precision, restricted to the listed items and prescribed in DIN V 6868-55, table D.1 to determine the values of LS with Delta LS=0.039 and the values of LC with Delta LC=7.2% is overstepped in so far, that it is impossible to draw a precise conclusion from the measured values to the performance of the subsystem film and processing. If any exceeding of the dose in image receptor plane is monitored, there is no tracking possible to a misadjustment of the subsystem film and processing.

Sustainable Energy-Storage Materials from Lignin-Graphene Nanocomposite-Derived Porous Carbon Film

DOE PAGES

Tran, Chau D.; Ho, Hoi Chun; Keum, Jong K.; ...

2017-05-30

We present a simple, green approach to fabricating porous free-standing carbon films. An alkaline solution of low-cost, renewable lignin and graphene oxide (GO) is cast, followed by simultaneous carbonization and activation. Lignin, which is the least valued product from several biomass processing industries, is an efficient source of carbon when used as an intercalating agent to separate graphene sheets derived from homogeneous GO/lignin nanocomposite films prepared from an aqueous alkaline (KOH) solution. After thermal treatment the GO/lignin films show complete dispersion of reduced GO sheets within amorphous lignin-derived carbon. Furthermore, the presence of KOH in the film produces activated carbon.more » The resulting activated carbon films display a specific surface area of up to 1744 m2 g 1 and consist of a balance of pore volumes with pore sizes below and above 1 nm. A two-electrode supercapacitor composed of these films in an aqueous electrolyte exhibits near-ideal capacitive behavior at an ultrahigh scan rate of 1 V s 1, while maintaining an excellent specific capacitance of 162 F g 1. Such outstanding performance of renewable carbon as a supercapacitor, in addition to the ease of electrode fabrication from a precursor containing 85 % lignin, offers a novel method for valorization of lignin-rich byproduct streams from biomass processing industries.« less

Sustainable Energy-Storage Materials from Lignin-Graphene Nanocomposite-Derived Porous Carbon Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tran, Chau D.; Ho, Hoi Chun; Keum, Jong K.

We present a simple, green approach to fabricating porous free-standing carbon films. An alkaline solution of low-cost, renewable lignin and graphene oxide (GO) is cast, followed by simultaneous carbonization and activation. Lignin, which is the least valued product from several biomass processing industries, is an efficient source of carbon when used as an intercalating agent to separate graphene sheets derived from homogeneous GO/lignin nanocomposite films prepared from an aqueous alkaline (KOH) solution. After thermal treatment the GO/lignin films show complete dispersion of reduced GO sheets within amorphous lignin-derived carbon. Furthermore, the presence of KOH in the film produces activated carbon.more » The resulting activated carbon films display a specific surface area of up to 1744 m2 g 1 and consist of a balance of pore volumes with pore sizes below and above 1 nm. A two-electrode supercapacitor composed of these films in an aqueous electrolyte exhibits near-ideal capacitive behavior at an ultrahigh scan rate of 1 V s 1, while maintaining an excellent specific capacitance of 162 F g 1. Such outstanding performance of renewable carbon as a supercapacitor, in addition to the ease of electrode fabrication from a precursor containing 85 % lignin, offers a novel method for valorization of lignin-rich byproduct streams from biomass processing industries.« less

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

TAMPERPROOF FILM BADGE

DOEpatents

Kocher, L.F.

1958-10-01

A persornel dosimeter film badge made of plastic, with provision for a picture of the wearer and an internal slide containing photographic film that is sensitive to various radiations, is described. Four windows made of differing material selectively attenuate alpha, beta, gamma rays, and neutrons so as to distinguish the particular type of radiation the wearer was subjected to. In addition, a lead shield has the identification number of the wearer perforated thereon so as to identify the film after processing. An internal magnetically actuated latch securely locks the slide within the body, and may be withdrawn only upon the external application of two strong magnetic forces in order to insure that the wearer or other curious persons will not accidentally expose the film to visual light.

Behaviour of a ZnO thin film as MSG for biosensing material in sub-wavelength regime

NASA Astrophysics Data System (ADS)

Iftimie, N.; Steigmann, R.; Danila, N. A.; Iacomi, F.; Faktorova, D.; Savin, A.

2016-11-01

Zinc oxide nanostructured materials, such as films and nanoparticles, could provide a suitable platform for development of high performance biosensing material due to their unique fundamental material properties. In this study, the enzyme biosensing consisting of a zinc oxide (ZnO) nanoparticles were grown on SiO2/Si substrates by vacuum thermal evaporation method and their sensing characteristics are examined in air and investigated. The film morphology is characterized by X-ray diffraction (XRD) the film crystalline quality and by scanning electron microscopy (SEM). Also, the interest in surface waves appeared due to evanescent waves in the metallic strip grating structure (MSG-Ag/ZnO/SiO2/Si) in sub-wavelength regime. Before testing the sensor with metamaterials (MMs) lens in the sub-wavelength regime, a simulation of the evanescent wave's formation has been performed at the edge of Ag strips, with thicknesses in the range of micrometers.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

NASA Astrophysics Data System (ADS)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Processing soft materials for integrated photonic and macroelectronic components and devices

NASA Astrophysics Data System (ADS)

Tsay, Candice Ruth

Incorporating soft materials into micro-fabrication processes opens up new functionalities for fabricated devices, but requires unique processing routes. This thesis presents our development of integrated photonic and macroelectronic structures through processing innovations that unite disparate inorganic/organic, and soft/rigid materials systems. For the integrated photonic system, we focus our efforts on chalcogenide glasses, dielectric materials that exhibit a variety of optical properties that make them desirable for near- and mid-infrared communications and sensing applications. However, processing limitations for these relatively fragile materials have made the direct integration of waveguides with sources or detectors challenging. Here we demonstrate the viability of several additive methods for patterning chalcogenide glass waveguides from solution. In particular, we focus on two complementary soft lithography methods. The first, micro-molding in capillaries (MIMIC), is shown to fabricate multi-mode As2S 3 waveguides which are directly integrated with quantum cascade lasers (QCLs). In a second method, we demonstrate the ability of micro-transfer molding (muTM), to produce arrays of single mode rib waveguides over large areas while maintaining low surface and edge roughness. These methods form a suite of processes that can be applied to chalcogenide solutions to create a diverse array of mid-IR photonic structures ranging from less than 5 to 10's of mum in cross-sectional dimension. Optical characterization, including measurement of waveguide loss by cut-back, is carried out in the mid-IR using QCLs. In addition, materials characterization of the chalcogenide glass structures is carried out to determine loss mechanisms and optimize processing. While we use soft polymeric materials as molds to pattern chalcogenide glasses, we also employ them as substrate material for stretchable electronic systems, which comprise a new class of flexible macroelectronics

Process for making dense thin films

DOEpatents

Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

2005-07-26

Provided are low-cost, mechanically strong, highly electronically conductive porous substrates and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical device substrates of novel composition and techniques for forming thin electrode/membrane/electrolyte coatings on the novel or more conventional substrates. In particular, in one embodiment the invention provides techniques for firing of device substrate to form densified electrolyte/membrane films 5 to 20 microns thick. In another embodiment, densified electrolyte/membrane films 5 to 20 microns thick may be formed on a pre-sintered substrate by a constrained sintering process. In some cases, the substrate may be a porous metal, alloy, or non-nickel cermet incorporating one or more of the transition metals Cr, Fe, Cu and Ag, or alloys thereof.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

2010-08-31

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2002-01-01

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Carbon-bridged oligo(p-phenylenevinylene)s for photostable and broadly tunable, solution-processable thin film organic lasers

PubMed Central

Morales-Vidal, Marta; Boj, Pedro G.; Villalvilla, José M.; Quintana, José A.; Yan, Qifan; Lin, Nai-Ti; Zhu, Xiaozhang; Ruangsupapichat, Nopporn; Casado, Juan; Tsuji, Hayato; Nakamura, Eiichi; Díaz-García, María A.

2015-01-01

Thin film organic lasers represent a new generation of inexpensive, mechanically flexible devices for spectroscopy, optical communications and sensing. For this purpose, it is desired to develop highly efficient, stable, wavelength-tunable and solution-processable organic laser materials. Here we report that carbon-bridged oligo(p-phenylenevinylene)s serve as optimal materials combining all these properties simultaneously at the level required for applications by demonstrating amplified spontaneous emission and distributed feedback laser devices. A series of six compounds, with the repeating unit from 1 to 6, doped into polystyrene films undergo amplified spontaneous emission from 385 to 585 nm with remarkably low threshold and high net gain coefficients, as well as high photostability. The fabricated lasers show narrow linewidth (<0.13 nm) single mode emission at very low thresholds (0.7 kW cm−2), long operational lifetimes (>105 pump pulses for oligomers with three to six repeating units) and wavelength tunability across the visible spectrum (408–591 nm). PMID:26416643

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries.

PubMed

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-28

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g(-1) and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.

The Use of Films as Suitable Packaging Materials for Minimally Processed Foods

DTIC Science & Technology

1994-08-01

subway stations. Many of these lunch box vending machines are serving lunches with no refrigeration. Ihe secret is the application of antimicrobial...Ooating: Convenience foods with different components bearing different water activity, oil content, or other migrating components (e.g., a sandwich ...growing in the barrier properties of edible film such as protein/lipid complexes that prevent dehydration of cut vegetables or a sandwich filling from

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

PubMed

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

In-space fabrication of thin-film structures

NASA Technical Reports Server (NTRS)

Lippman, M. E.

1972-01-01

A conceptual study of physical vapor-deposition processes for in-space fabrication of thin-film structures is presented. Potential advantages of in-space fabrication are improved structural integrity and surface reflectivity of free-standing ultra-thin films and coatings. Free-standing thin-film structures can find use as photon propulsion devices (solar sails). Other applications of the concept involve free-standing shadow shields, or thermal control coatings of spacecraft surfaces. Use of expendables (such as booster and interstage structures) as source material for the physical vapor deposition process is considered. The practicability of producing thin, textured, aluminum films by physical vapor deposition and subsequent separation from a revolving substrate is demonstrated by laboratory experiments. Heating power requirement for the evaporation process is estimated for a specific mission.

Silk film biomaterials for ocular surface repair

NASA Astrophysics Data System (ADS)

Lawrence, Brian David

Current biomaterial approaches for repairing the cornea's ocular surface upon injury are partially effective due to inherent material limitations. As a result there is a need to expand the biomaterial options available for use in the eye, which in turn will help to expand new clinical innovations and technology development. The studies illustrated here are a collection of work to further characterize silk film biomaterials for use on the ocular surface. Silk films were produced from regenerated fibroin protein solution derived from the Bombyx mori silkworm cocoon. Methods of silk film processing and production were developed to produce consistent biomaterials for in vitro and in vivo evaluation. A wide range of experiments was undertaken that spanned from in vitro silk film material characterization to in vivo evaluation. It was found that a variety of silk film properties could be controlled through a water-annealing process. Silk films were then generated that could be use in vitro to produce stratified corneal epithelial cell sheets comparable to tissue grown on the clinical standard substrate of amniotic membrane. This understanding was translated to produce a silk film design that enhanced corneal healing in vivo on a rabbit injury model. Further work produced silk films with varying surface topographies that were used as a simplified analog to the corneal basement membrane surface in vitro. These studies demonstrated that silk film surface topography is capable of directing corneal epithelial cell attachment, growth, and migration response. Most notably epithelial tissue development was controllably directed by the presence of the silk surface topography through increasing cell sheet migration efficiency at the individual cellular level. Taken together, the presented findings represent a comprehensive characterization of silk film biomaterials for use in ocular surface reconstruction, and indicate their utility as a potential material choice in the

Extraterrestrial materials processing

NASA Technical Reports Server (NTRS)

Steurer, W. H.

1982-01-01

The first year results of a multi-year study of processing extraterrestrial materials for use in space are summarized. Theoretically, there are potential major advantages to be derived from the use of such materials for future space endeavors. The types of known or postulated starting raw materials are described including silicate-rich mixed oxides on the Moon, some asteroids and Mars; free metals in some asteroids and in small quantities in the lunar soil; and probably volatiles like water and CO2 on Mars and some asteroids. Candidate processes for space materials are likely to be significantly different from their terrestrial counterparts largely because of: absence of atmosphere; lack of of readily available working fluids; low- or micro-gravity; no carbon-based fuels; readily available solar energy; and severe constraints on manned intervention. The extraction of metals and oxygen from lunar material by magma electrolysis or by vapor/ion phase separation appears practical.

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Report on Development and Validation of Utilization Materials to Accompany Two Series of U.S. Office of Education Alcohol Education Films.

ERIC Educational Resources Information Center

Finn, Peter

This report records the development and validation by Abt Associates, Inc. of utilization materials developed to accompany the two U.S. Office of Education film series, Jackson Junior High and Dial A-L-C-O-H-O-L. The first section describes the process by which the nine project products were developed. These products include the following: (1) a…

Hybrid films with phase-separated domains: A new class of functional materials

NASA Astrophysics Data System (ADS)

Kang, Minjee; Leal, Cecilia

The cell membrane is highly compartmentalized over micro-and nano scale. The compartmentalized domains play an important role in regulating the diffusion and distribution of species within and across the membrane. In this work, we introduced nanoscale heterogeneities into lipid films for the purpose of developing nature-mimicking phase-separated materials. The mixtures of phospholipids and amphiphilic block copolymers self-assemble into supported 1D multi-bilayers. We observed that in each lamella, mixtures of lipid and polymer phase-separate into domains that differ in their composition akin to sub-phases in cholesterol-containing lipid bilayers. Interestingly, we found evidence that like-domains are in registry across multilayers, making phase separation three-dimensional. To exploit such distinctive domain structure for surface-mediated drug delivery, we incorporated pharmaceutical molecules into the films. The drug release study revealed that the presence of domains in hybrid films modifies the diffusion pathways of drugs that become confined within phase-separated domains. A comprehensive domain structure coupled with drug diffusion pathways in films will be presented, offering new perspectives in designing a thin-film matrix system for controlled drug delivery. This work was supported by the National Science Foundation under Grant No. DMR-1554435.

Photovoltaic Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duty, C.; Angelini, J.; Armstrong, B.

The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication ofmore » high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational

Switchable vanadium oxide films by a sol-gel process

NASA Astrophysics Data System (ADS)

Partlow, D. P.; Gurkovich, S. R.; Radford, K. C.; Denes, L. J.

1991-07-01

Thin polycrystalline films of VO2 and V2O3 were deposited on a variety of substrates using a sol-gel process. The orientation, microstructure, optical constants, and optical and electrical switching behavior are presented. These films exhibited sharp optical switching behavior even on an amorphous substrate such as fused silica. The method yields reproducible results and is amenable to the coating of large substrates and curved surfaces such as mirrors and lenses.

High-quality LaVO 3 films as solar energy conversion material

DOE PAGES

Zhang, Hai -Tian; Brahlek, Matthew; Ji, Xiaoyu; ...

2017-03-21

Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO 3 films were grown withmore » defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO 3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO 3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.« less

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, D.F.; Kwan, S.W.

1999-03-30

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, David F.; Kwan, Simon W.

1999-01-01

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

Coated substrates and process

DOEpatents

Chu, Wei-kan; Childs, Charles B.

1991-01-01

Disclosed herein is a coated substrate and a process for forming films on substrates and for providing a particularly smooth film on a substrate. The method of this invention involves subjecting a surface of a substrate to contact with a stream of ions of an inert gas having sufficient force and energy to substantially change the surface characteristics of said substrate, and then exposing a film-forming material to a stream of ions of an inert gas having sufficient energy to vaporize the atoms of said film-forming material and to transmit the vaporized atoms to the substrate surface with sufficient force to form a film bonded to the substrate. This process is particularly useful commercially because it forms strong bonds at room temperature. This invention is particularly useful for adhering a gold film to diamond and forming ohmic electrodes on diamond, but also can be used to bond other films to substrates.

Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

NASA Astrophysics Data System (ADS)

Hihath, Sahar

Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Optimization of process parameters for RF sputter deposition of tin-nitride thin-films

NASA Astrophysics Data System (ADS)

Jangid, Teena; Rao, G. Mohan

2018-05-01

Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

Film Delivery Module For Fiber Placement Fabrication of Hybridized Composite Structures

NASA Technical Reports Server (NTRS)

Hulcher, Anthony Bruce; Young, Greg

2005-01-01

A new fabrication technology has been developed at the NASA Marshall Space Flight Center that will allow for the fabrication of hybridized composite structures using fiber placement processing. This technology was originally developed in response to a need to address the issue of hydrogen permeation and microcracking in cryogenic propellant tanks. Numerous thin polymeric and metallized films were investigated under low temperatures conditions for use as barrier films in a composite tank. Manufacturing studies conducted at that time did not address the processing issues related to fabrication of a hybridized tank wall. A film processing head was developed that will allow for the processing of thin polymeric and metallized films, metallic foils, and adhesives using fiber placement processing machinery. The film head is designed to enable the simultaneous processing of film materials and composite tape/tow during the composite part layup process and is also capable of processing the film during an independent operation. Several initial demonstrations were conducted to assess the performance of the film module device. Such assessments included film strip lay-up accuracy, capability to fabricate panels having internal film liners, and fabrication of laminates with embedded film layers.

One material, multiple functions: graphene/Ni(OH)2 thin films applied in batteries, electrochromism and sensors

PubMed Central

Neiva, Eduardo G. C.; Oliveira, Marcela M.; Bergamini, Márcio F.; Marcolino, Luiz H.; Zarbin, Aldo J. G.

2016-01-01

Different nanocomposites between reduced graphene oxide (rGO) and Ni(OH)2 nanoparticles were synthesized through modifications in the polyol method (starting from graphene oxide (GO) dispersion in ethylene glycol and nickel acetate), processed as thin films through the liquid-liquid interfacial route, homogeneously deposited over transparent electrodes and spectroscopically, microscopically and electrochemically characterized. The thin and transparent nanocomposite films (112 to 513 nm thickness, 62.6 to 19.9% transmittance at 550 nm) consist of α-Ni(OH)2 nanoparticles (mean diameter of 4.9 nm) homogeneously decorating the rGO sheets. As a control sample, neat Ni(OH)2 was prepared in the same way, consisting of porous nanoparticles with diameter ranging from 30 to 80 nm. The nanocomposite thin films present multifunctionality and they were applied as electrodes to alkaline batteries, as electrochromic material and as active component to electrochemical sensor to glycerol. In all the cases the nanocomposite films presented better performances when compared to the neat Ni(OH)2 nanoparticles, showing energy and power of 43.7 W h kg−1 and 4.8 kW kg−1 (8.24 A g−1) respectively, electrochromic efficiency reaching 70 cm2 C−1 and limit of detection as low as 15.4 ± 1.2 μmol L−1. PMID:27654065

Carbon film electrodes for super capacitor applications

DOEpatents

Tan, Ming X.

1999-01-01

A microporous carbon film for use as electrodes in energy strorage devices is disclosed, which is made by the process comprising the steps of: (1) heating a polymer film material consisting essentially of a copolymer of polyvinylidene chloride and polyvinyl chloride in an inert atmosphere to form a carbon film; and (2) activating said carbon film to form said microporous carbon film having a density between about 0.7 g/cm.sup.2 and 1 g/cm.sup.2 and a gravimetric capacitance of about between 120 F/g and 315 F/g.

Polycrystalline Thin-Film Photovoltaics | Photovoltaic Research | NREL

Science.gov Websites

(CdTe) We develop processes and a range of materials for CdTe photovoltaic (PV) devices. Our work partners. Our objectives are to improve CdTe PV performance, reduce costs, and advance fundamental processes and materials related to thin-film polycrystalline PV devices, and our measurements and

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Bacteriorhodopsin films for optical signal processing and data storage

NASA Technical Reports Server (NTRS)

Walkup, John F. (Principal Investigator); Mehrl, David J. (Principal Investigator)

1996-01-01

This report summarizes the research results obtained on NASA Ames Grant NAG 2-878 entitled 'Investigations of Bacteriorhodopsin Films for Optical Signal Processing and Data Storage.' Specifically we performed research, at Texas Tech University, on applications of Bacteriorhodopisin film to both (1) dynamic spatial filtering and (2) holographic data storage. In addition, measurements of the noise properties of an acousto-optical matrix-vestor multiplier built for NASA Ames by Photonic Systems Inc. were performed at NASA Ames' Photonics Laboratory. This research resulted in two papers presented at major optical data processing conferences and a journal paper which is to appear in APPLIED OPTICS. A new proposal for additional BR research has recently been submitted to NASA Ames Research Center.

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

PubMed Central

Yang, C.; Souchay, D.; Kneiß, M.; Bogner, M.; Wei, H. M.; Lorenz, M.; Oeckler, O.; Benstetter, G.; Fu, Y. Q.; Grundmann, M.

2017-01-01

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity. PMID:28681842

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film.

PubMed

Yang, C; Souchay, D; Kneiß, M; Bogner, M; Wei, H M; Lorenz, M; Oeckler, O; Benstetter, G; Fu, Y Q; Grundmann, M

2017-07-06

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

Process to form mesostructured films

DOEpatents

Brinker, C.J.; Anderson, M.T.; Ganguli, R.; Lu, Y.F.

1999-01-12

This invention comprises a method to form a family of supported films with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts. 12 figs.

High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy.

PubMed

Lai, Y W; Hamann, S; Ehmann, M; Ludwig, A

2011-06-01

We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent. © 2011 American Institute of Physics

Comparison of solution-mixed and sequentially processed P3HT: F4TCNQ films: effect of doping-induced aggregation on film morphology

DOE PAGES

Jacobs, Ian E.; Aasen, Erik W.; Oliveira, Julia L.; ...

2016-03-23

Doping polymeric semiconductors often drastically reduces the solubility of the polymer, leading to difficulties in processing doped films. Here, we compare optical, electrical, and morphological properties of P3HT films doped with F4TCNQ, both from mixed solutions and using sequential solution processing with orthogonal solvents. We demonstrate that sequential doping occurs rapidly (<1 s), and that the film doping level can be precisely controlled by varying the concentration of the doping solution. Furthermore, the choice of sequential doping solvent controls whether dopant anions are included or excluded from polymer crystallites. Atomic force microscopy (AFM) reveals that sequential doping produces significantly moremore » uniform films on the nanoscale than the mixed-solution method. In addition, we show that mixed-solution doping induces the formation of aggregates even at low doping levels, resulting in drastic changes to film morphology. Sequentially coated films show 3–15 times higher conductivities at a given doping level than solution-doped films, with sequentially doped films processed to exclude dopant anions from polymer crystallites showing the highest conductivities. In conclusion, we propose a mechanism for doping induced aggregation in which the shift of the polymer HOMO level upon aggregation couples ionization and solvation energies. To show that the methodology is widely applicable, we demonstrate that several different polymer:dopant systems can be prepared by sequential doping.« less

Comparison of solution-mixed and sequentially processed P3HT: F4TCNQ films: effect of doping-induced aggregation on film morphology