A method to monitor the quality of ultra-thin nitride for trench DRAM with a buried strap structure

NASA Astrophysics Data System (ADS)

Wu, Yung-Hsien; Wang, Chun-Yao; Chang, Ian; Kao, Chien-Kang; Kuo, Chia-Ming; Ku, Alex

2007-02-01

A new approach to monitor the quality of an ultra-thin nitride film has been proposed. The nitride quality is monitored by observing the oxide thickness for the nitride film after wet oxidation since the resistance to oxidation strongly depends on its quality. To obtain a stable oxide thickness without interference from extrinsic factors for process monitoring, monitor wafers without dilute HF solution clean are suggested because the native-oxide containing surface is less sensitive to oxygen and therefore forms the nitride film with stable quality. In addition, the correlation between variable retention time (VRT) performance of a real dynamic random access memory (DRAM) product and oxide thickness from different nitride process temperatures can be successfully explained and this correlation can also be used to establish the appropriate oxide thickness range for process monitoring.

Mathematical modeling for resource and energy saving control of extruders in multi-assortment productions of polymeric films

NASA Astrophysics Data System (ADS)

Polosin, A. N.; Chistyakova, T. B.

2018-05-01

In this article, the authors describe mathematical modeling of polymer processing in extruders of various types used in extrusion and calender productions of film materials. The method consists of the synthesis of a static model for calculating throughput, energy consumption of the extruder, extrudate quality indices, as well as a dynamic model for evaluating polymer residence time in the extruder, on which the quality indices depend. Models are adjusted according to the extruder type (single-screw, reciprocating, twin-screw), its screw and head configuration, extruder’s work temperature conditions, and the processed polymer type. Models enable creating extruder screw configurations and determining extruder controlling action values that provide the extrudate of required quality while satisfying extruder throughput and energy consumption requirements. Model adequacy has been verified using polyolefins’ and polyvinylchloride processing data in different extruders. The program complex, based on mathematical models, has been developed in order to control extruders of various types in order to ensure resource and energy saving in multi-assortment productions of polymeric films. Using the program complex in the control system for the extrusion stage of the polymeric film productions enables improving film quality, reducing spoilage, lessening the time required for production line change-over to other throughput and film type assignment.

Films reject analysis for conventional radiography in Iranian main hospitals.

PubMed

Roohi Shalemaei, R

2011-09-01

The purpose of this study was to evaluate image quality, to determine the reject film rate in conventional radiology procedures and to determine the causes of defects on the films. Rejected films were collected in four main hospitals in Iran and five routine examinations were considered. The rejected films were analysed and assigned to five different categories. There was a significant reduction in the overall film reject rate for all examinations investigated from 17.6 to 11.4 % when a quality assurance (QA) programme was implemented. The major reasons for rejection of films were over- or under-exposure and processing problems. The study showed the importance of a QA programme in order to deliver high-quality health service to patients.

Application of terahertz pulse imaging as PAT tool for non-destructive evaluation of film-coated tablets under different manufacturing conditions.

PubMed

Dohi, Masafumi; Momose, Wataru; Yoshino, Hiroyuki; Hara, Yuko; Yamashita, Kazunari; Hakomori, Tadashi; Sato, Shusaku; Terada, Katsuhide

2016-02-05

Film-coated tablets (FCTs) are a popular solid dosage form in pharmaceutical industry. Manufacturing conditions during the film-coating process affect the properties of the film layer, which might result in critical quality problems. Here, we analyzed the properties of the film layer using a non-destructive approach with terahertz pulsed imaging (TPI). Hydrophilic tablets that become distended upon water absorption were used as core tablets and coated with film under different manufacturing conditions. TPI-derived parameters such as film thickness (FT), film surface reflectance (FSR), and interface density difference (IDD) between the film layer and core tablet were affected by manufacturing conditions and influenced critical quality attributes of FCTs. Relative standard deviation of FSR within tablets correlated well with surface roughness. Tensile strength could be predicted in a non-destructive manner using the multivariate regression equation to estimate the core tablet density by film layer density and IDD. The absolute value of IDD (Lateral) correlated with the risk of cracking on the lateral film layer when stored in a high-humidity environment. Further, in-process control was proposed for this value during the film-coating process, which will enable a feedback control system to be applied to process parameters and reduced risk of cracking without a stability test. Copyright © 2015 Elsevier B.V. All rights reserved.

Precursors for the polymer-assisted deposition of films

DOEpatents

McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

2013-09-10

A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

Optimum processing of mammographic film.

PubMed

Sprawls, P; Kitts, E L

1996-03-01

Underprocessing of mammographic film can result in reduced contrast and visibility of breast structures and an unnecessary increase in radiation dose to the patient. Underprocessing can be caused by physical factors (low developer temperature, inadequate development time, insufficient developer agitation) or chemical factors (developer not optimized for film type; overdiluted, underreplenished, contaminated, or frequently changed developer). Conventional quality control programs are designed to produce consistent processing but do not address the issue of optimum processing. Optimum processing is defined as the level of processing that produces the film performance characteristics (contrast and sensitivity) specified by the film manufacturer. Optimum processing of mammographic film can be achieved by following a two-step protocol. The first step is to set up the processing conditions according to recommendations from the film and developer chemistry manufacturers. The second step is to verify the processing results by comparing them with sensitometric data provided by the film manufacturer.

Growth and Characterization of Epitaxial Piezoelectric and Semiconductor Films.

DTIC Science & Technology

1980-07-01

quality epitaxial films at low growth rates. This process is limited to films up to a few microns thickness. The aluminum chloride/ ammonia CVD process has... scrubber through a rotary Vacuum pump maintaining Reactions.-DEZ is an electron deficient compound a pressure of about 400 Torr inside the reaction chain

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.; Potember, Richard S.

1991-01-01

The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

Elucidating the Key Role of a Lewis Base Solvent in the Formation of Perovskite Films Fabricated from the Lewis Adduct Approach.

PubMed

Cao, Xiaobing; Zhi, Lili; Li, Yahui; Fang, Fei; Cui, Xian; Yao, Youwei; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

2017-09-27

High-quality perovskite films can be fabricated from Lewis acid-base adducts through molecule exchange. Substantial work is needed to fully understand the formation mechanism of the perovskite films, which helps to further improve their quality. Here, we study the formation of CH 3 NH 3 PbI 3 perovskite films by introducing some dimethylacetamide into the PbI 2 /N,N-dimethylformamide solution. We reveal that there are three key processes during the formation of perovskite films through the Lewis acid-base adduct approach: molecule intercalation of solvent into the PbI 2 lattice, molecule exchange between the solvent and CH 3 NH 3 I, and dissolution-recrystallization of the perovskite grains during annealing. The Lewis base solvents play multiple functions in the above processes. The properties of the solvent, including Lewis basicity and boiling point, play key roles in forming smooth perovskite films with large grains. We also provide some rules for choosing Lewis base additives to prepare high-quality perovskite films through the Lewis adduct approach.

Overcoming Film Quality Issues for Conjugated Polymers Doped with F4TCNQ by Solution Sequential Processing: Hall Effect, Structural, and Optical Measurements.

PubMed

Scholes, D Tyler; Hawks, Steven A; Yee, Patrick Y; Wu, Hao; Lindemuth, Jeffrey R; Tolbert, Sarah H; Schwartz, Benjamin J

2015-12-03

We demonstrate that solution-sequential processing (SqP) can yield heavily doped pristine-quality films when used to infiltrate the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into pure poly(3-hexylthiophene) (P3HT) polymer layers. Profilometry measurements show that the SqP method produces doped films with essentially the same surface roughness as pristine films, and 2-D grazing-incidence wide-angle X-ray scattering (GIWAXS) confirms that SqP preserves both the size and orientation of the pristine polymer's crystallites. Unlike traditional blend-cast F4TCNQ/P3HT doped films, our sequentially processed layers have tunable and reproducible conductivities reaching as high as 5.5 S/cm even when measured over macroscopic (>1 cm) distances. The high conductivity and superb film quality allow for meaningful Hall effect measurements, which reveal p-type conduction and carrier concentrations tunable from 10(16) to 10(20) cm(-3) and hole mobilities ranging from ∼0.003 to 0.02 cm(2) V(-1) s(-1) at room temperature over the doping levels examined.

Multi-objective optimization of laser-scribed micro grooves on AZO conductive thin film using Data Envelopment Analysis

NASA Astrophysics Data System (ADS)

Kuo, Chung-Feng Jeffrey; Quang Vu, Huy; Gunawan, Dewantoro; Lan, Wei-Luen

2012-09-01

Laser scribing process has been considered as an effective approach for surface texturization on thin film solar cell. In this study, a systematic method for optimizing multi-objective process parameters of fiber laser system was proposed to achieve excellent quality characteristics, such as the minimum scribing line width, the flattest trough bottom, and the least processing edge surface bumps for increasing incident light absorption of thin film solar cell. First, the Taguchi method (TM) obtained useful statistical information through the orthogonal array with relatively fewer experiments. However, TM is only appropriate to optimize single-objective problems and has to rely on engineering judgment for solving multi-objective problems that can cause uncertainty to some degree. The back-propagation neural network (BPNN) and data envelopment analysis (DEA) were utilized to estimate the incomplete data and derive the optimal process parameters of laser scribing system. In addition, analysis of variance (ANOVA) method was also applied to identify the significant factors which have the greatest effects on the quality of scribing process; in other words, by putting more emphasis on these controllable and profound factors, the quality characteristics of the scribed thin film could be effectively enhanced. The experiments were carried out on ZnO:Al (AZO) transparent conductive thin film with a thickness of 500 nm and the results proved that the proposed approach yields better anticipated improvements than that of the TM which is only superior in improving one quality while sacrificing the other qualities. The results of confirmation experiments have showed the reliability of the proposed method.

Effects of processing conditions on mammographic image quality.

PubMed

Braeuning, M P; Cooper, H W; O'Brien, S; Burns, C B; Washburn, D B; Schell, M J; Pisano, E D

1999-08-01

Any given mammographic film will exhibit changes in sensitometric response and image resolution as processing variables are altered. Developer type, immersion time, and temperature have been shown to affect the contrast of the mammographic image and thus lesion visibility. The authors evaluated the effect of altering processing variables, including film type, developer type, and immersion time, on the visibility of masses, fibrils, and speaks in a standard mammographic phantom. Images of a phantom obtained with two screen types (Kodak Min-R and Fuji) and five film types (Kodak Min-R M, Min-R E, Min-R H; Fuji UM-MA HC, and DuPont Microvision-C) were processed with five different developer chemicals (Autex SE, DuPont HSD, Kodak RP, Picker 3-7-90, and White Mountain) at four different immersion times (24, 30, 36, and 46 seconds). Processor chemical activity was monitored with sensitometric strips, and developer temperatures were continuously measured. The film images were reviewed by two board-certified radiologists and two physicists with expertise in mammography quality control and were scored based on the visibility of calcifications, masses, and fibrils. Although the differences in the absolute scores were not large, the Kodak Min-R M and Fuji films exhibited the highest scores, and images developed in White Mountain and Autex chemicals exhibited the highest scores. For any film, several processing chemicals may be used to produce images of similar quality. Extended processing may no longer be necessary.

Polymer-assisted aqueous deposition of metal oxide films

DOEpatents

Li, DeQuan [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM

2003-07-08

An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

The Dawn of Lead-Free Perovskite Solar Cell: Highly Stable Double Perovskite Cs2AgBiBr6 Film.

PubMed

Wu, Cuncun; Zhang, Qiaohui; Liu, Yang; Luo, Wei; Guo, Xuan; Huang, Ziru; Ting, Hungkit; Sun, Weihai; Zhong, Xinrui; Wei, Shiyuan; Wang, Shufeng; Chen, Zhijian; Xiao, Lixin

2018-03-01

Recently, lead-free double perovskites have emerged as a promising environmentally friendly photovoltaic material for their intrinsic thermodynamic stability, appropriate bandgaps, small carrier effective masses, and low exciton binding energies. However, currently no solar cell based on these double perovskites has been reported, due to the challenge in film processing. Herein, a first lead-free double perovskite planar heterojunction solar cell with a high quality Cs 2 AgBiBr 6 film, fabricated by low-pressure assisted solution processing under ambient conditions, is reported. The device presents a best power conversion efficiency of 1.44%. The preliminary efficiency and the high stability under ambient condition without encapsulation, together with the high film quality with simple processing, demonstrate promise for lead-free perovskite solar cells.

Causes of cine image quality deterioration in cardiac catheterization laboratories.

PubMed

Levin, D C; Dunham, L R; Stueve, R

1983-10-01

Deterioration of cineangiographic image quality can result from malfunctions or technical errors at a number of points along the cine imaging chain: generator and automatic brightness control, x-ray tube, x-ray beam geometry, image intensifier, optics, cine camera, cine film, film processing, and cine projector. Such malfunctions or errors can result in loss of image contrast, loss of spatial resolution, improper control of film optical density (brightness), or some combination thereof. While the electronic and photographic technology involved is complex, physicians who perform cardiac catheterization should be conversant with the problems and what can be done to solve them. Catheterization laboratory personnel have control over a number of factors that directly affect image quality, including radiation dose rate per cine frame, kilovoltage or pulse width (depending on type of automatic brightness control), cine run time, selection of small or large focal spot, proper object-intensifier distance and beam collimation, aperture of the cine camera lens, selection of cine film, processing temperature, processing immersion time, and selection of developer.

[Quality assurance from the viewpoint of the x-ray film industry].

PubMed

von Volkmann, T

1992-08-01

The parameters of a film-screen-combination are listed in the directive to section 16 of the german X-ray Regulation. These parameters are determined by methods described in DIN standards and published by the manufacturer. Comparable but less precise parameters are determined in the Acceptance Test. For physical reasons it is not possible to determine the speed of an X-ray film or the intensification factor of a screen separately. The films, screens and processing chemicals delivered by the members of the manufacturer association ZVEI are kept below a deviation (expressed as relative contribution to the system speed S) of +/- 10% for the majority of products, the upper limit is +/- 15%. Poor storage and transport conditions may adversely affect the quality of X-ray films. A special labeling of the film box shall serve to guarantee safe distribution channels. The processing conditions are adjusted at the Acceptance Test according to the manufacturers recommendations. The Constancy Test of film processing serves to maintain these correct conditions. Methods deviating from the DIN-method are of limited (Bayerische method) or no value (Stuttgart method).

Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin; Witherow, William K.; Bank, Curtis; Shields, Angela; Hicks, Rosline; Ashley, Paul R.

1996-01-01

In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.

The Dawn of Lead‐Free Perovskite Solar Cell: Highly Stable Double Perovskite Cs2AgBiBr6 Film

PubMed Central

Wu, Cuncun; Zhang, Qiaohui; Liu, Yang; Luo, Wei; Guo, Xuan; Huang, Ziru; Ting, Hungkit; Sun, Weihai; Zhong, Xinrui; Wei, Shiyuan

2017-01-01

Abstract Recently, lead‐free double perovskites have emerged as a promising environmentally friendly photovoltaic material for their intrinsic thermodynamic stability, appropriate bandgaps, small carrier effective masses, and low exciton binding energies. However, currently no solar cell based on these double perovskites has been reported, due to the challenge in film processing. Herein, a first lead‐free double perovskite planar heterojunction solar cell with a high quality Cs2AgBiBr6 film, fabricated by low‐pressure assisted solution processing under ambient conditions, is reported. The device presents a best power conversion efficiency of 1.44%. The preliminary efficiency and the high stability under ambient condition without encapsulation, together with the high film quality with simple processing, demonstrate promise for lead‐free perovskite solar cells. PMID:29593974

Design of Polymers with Semiconductor, NLO and Structural Properties.

DTIC Science & Technology

1991-04-22

polymer thin films. + 14 KV Needle electrod Polymer layer ITO electrode Substrate Heater and temperature control unit The second harmonic coefficients of...the solubily and processability through utilization of derivitization and precursor routes we have been able to form the first optical quality films...ethylene spacer, and therefore 14 possesses a great degree of solubility in organic solvents, necessary for the fabrication of optical quality thin films

Fabrication of amplitude-phase type diffractive optical elements in aluminium films

NASA Astrophysics Data System (ADS)

Fomchenkov, S. A.; Butt, M. A.

2017-11-01

In the course of studies have been conducted a method of forming the phase diffractive optical elements (DOEs) by direct laser writing in thin films of aluminum. The quality of the aluminum films were investigated depending on the parameters of magnetron sputtering process. Moreover, the parameters of the laser writing process in thin films of aluminum were optimized. The structure of phase diffractive optical elements was obtained by the proposed method.

Rapid permeation measurement system for the production control of monolayer and multilayer films

NASA Astrophysics Data System (ADS)

Botos, J.; Müller, K.; Heidemeyer, P.; Kretschmer, K.; Bastian, M.; Hochrein, T.

2014-05-01

Plastics have been used for packaging films for a long time. Until now the development of new formulations for film applications, including process optimization, has been a time-consuming and cost-intensive process for gases like oxygen (O2) or carbon dioxide (CO2). By using helium (He) the permeation measurement can be accelerated from hours or days to a few minutes. Therefore a manometric measuring system for tests according to ISO 15105-1 is coupled with a mass spectrometer to determine the helium flow rate and to calculate the helium permeation rate. Due to the accelerated determination the permeation quality of monolayer and multilayer films can be measured atline. Such a system can be used to predict for example the helium permeation rate of filled polymer films. Defined quality limits for the permeation rate can be specified as well as the prompt correction of process parameters if the results do not meet the specification. This method for process control was tested on a pilot line with a corotating twin-screw extruder for monolayer films. Selected process parameters were varied iteratively without changing the material formulation to obtain the best process parameter set and thus the lowest permeation rate. Beyond that the influence of different parameters on the helium permeation rate was examined on monolayer films. The results were evaluated conventional as well as with artificial neuronal networks in order to determine the non-linear correlation between all process parameters.

Design of optimal buffer layers for CuInGaSe2 thin-film solar cells(Conference Presentation)

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo; Varley, Joel B.; He, Xiaoqing; Rockett, Angus A.; Bailey, Jeff; Zapalac, Geordie H.; Mackie, Neil; Poplavskyy, Dmitry; Bayman, Atiye

2016-09-01

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

NASA Astrophysics Data System (ADS)

Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

2017-03-01

Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1-xGaxSe2-ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (-1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

NASA Astrophysics Data System (ADS)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

NASA Astrophysics Data System (ADS)

El hamali, S. O.; Cranton, W. M.; Kalfagiannis, N.; Hou, X.; Ranson, R.; Koutsogeorgis, D. C.

2016-05-01

High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10-3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10-4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested. Electronic supplementary information (ESI) available: Three movie files: 3mer-physorption.mpg and 3mer-chemisorption.mpg feature examples of the adsorption state sampling of a carbon trimer on the heated h-BN substrate as mentioned in the ``Single Molecule Adsorption Study'' section. In 3mer-film-growth.mpg, an instance of honey comb formation during the initial phase of graphene growth simulation using a carbon trimer beam is captured. An initially sp hybridized carbon atom (red colored) becomes sp2 hybridized as a result of additional covalent bonding with the impinging carbon trimer. As the bond angle around the red carbon changes from 180 degree (sp) to 120 degree (sp2), nearby carbon atoms enclose to form a hexagon structure composed of 6 carbon atoms. See DOI: 10.1039/c6nr01396a

Ultrasmooth Perovskite Film via Mixed Anti-Solvent Strategy with Improved Efficiency.

PubMed

Yu, Yu; Yang, Songwang; Lei, Lei; Cao, Qipeng; Shao, Jun; Zhang, Sheng; Liu, Yan

2017-02-01

Most antisolvents employed in previous research were miscible with perovskite precursor solution. They always led to fast formation of perovskite even if the intermediate stage existed, which was not beneficial to obtain high quality perovskite films and made the formation process less controllable. In this work, a novel ethyl ether/n-hexane mixed antisolvent (MAS) was used to achieve high nucleation density and slow down the formation process of perovskite, producing films with improved orientation of grains and ultrasmooth surfaces. These high quality films exhibited efficient charge transport at the interface of perovskite/hole transport material and perovskite solar cells based on these films showed greatly improved performance with the best power conversion efficiency of 17.08%. This work also proposed a selection principle of MAS and showed that solvent engineering by designing the mixed antisolvent system can lead to the fabrication of high-performance perovskite solar cells.

Phantom evaluation of the effect of film processing on mammographic screen-film combinations.

PubMed

McLean, D; Rickard, M T

1994-08-01

Mammographic image quality should be optimal for diagnosis, and the film contrast can be manipulated by altering development parameters. In this study phantom test objects were radiographed and processed for a given range of developer temperatures and times for four film-screen systems. Radiologists scored the phantom test objects on the resultant films to evaluate the effect on diagnosis of varying image contrast. While for three film-screen systems processing led to appreciable contrast differences, for only one film system did maximum contrast correspond with optimal phantom test object scoring. The inability to show an effect on diagnosis in all cases is possibly due to the variation in radiologist responses found in this study and in normal clinical circumstances. Other technical factors such as changes in film fog, grain and mottle may contribute to the study findings.

Novel growth techniques for the deposition of high-quality perovskite thin films

NASA Astrophysics Data System (ADS)

Ng, Annie; Ren, Zhiwei; Li, Gang; Djurišić, Aleksandra B.; Surya, Charles

2018-02-01

We present investigations on the growth of high quality CH3NH3PbI3 (MAPI) thin films using both vapor and solution techniques. Recent work on perovskite film growth indicates critical dependencies of the film quality on the nucleation and crystallization steps requiring: i.) uniform distribution of nucleation sites; and ii.) optimal crystallization rate that facilitates the growth of a compact, continuous film with low density of pinholes. Our work shows that the hybrid chemical vapor deposition technique (HCVD) technique is well suited for the deposition of evenly distributed nucleation sites and the optimization of the crystallization rate of the film through detailed monitoring of the thermal profile of the growth process. Signficant reduction in the defect states is recorded by annealing the perovskite films in O2. The results are consistent with theoretical studies by Yin et al. 1 on O and Cl passivation of the shallow states at the grain boundary of MAPI. Their work provides the theoretical basis for our experimental observations on the passivation of shallow states by oxygen annealing. High quality films were achieved through detailed management of the carrier gas composition and the thermal profile of the nucleation and crystallization steps.

Fuzzy intelligent quality monitoring model for X-ray image processing.

PubMed

Khalatbari, Azadeh; Jenab, Kouroush

2009-01-01

Today's imaging diagnosis needs to adapt modern techniques of quality engineering to maintain and improve its accuracy and reliability in health care system. One of the main factors that influences diagnostic accuracy of plain film X-ray on detecting pathology is the level of film exposure. If the level of film exposure is not adequate, a normal body structure may be interpretated as pathology and vice versa. This not only influences the patient management but also has an impact on health care cost and patient's quality of life. Therefore, providing an accurate and high quality image is the first step toward an excellent patient management in any health care system. In this paper, we study these techniques and also present a fuzzy intelligent quality monitoring model, which can be used to keep variables from degrading the image quality. The variables derived from chemical activity, cleaning procedures, maintenance, and monitoring may not be sensed, measured, or calculated precisely due to uncertain situations. Therefore, the gamma-level fuzzy Bayesian model for quality monitoring of an image processing is proposed. In order to apply the Bayesian concept, the fuzzy quality characteristics are assumed as fuzzy random variables. Using the fuzzy quality characteristics, the newly developed model calculates the degradation risk for image processing. A numerical example is also presented to demonstrate the application of the model.

What Makes a Youth-Produced Film Good? The Youth Audience Perspective

ERIC Educational Resources Information Center

Halverson, Erica Rosenfeld; Gibbons, Damiana; Copeland, Shelby; Andrews, Alon; Llorens, Belen Hernando; Bass, Michelle B.

2014-01-01

In this article, we explore how youth audiences evaluate the quality of youth-produced films. Our interest stems from a dearth of ways to measure the quality of what youth produce in artistic production processes. As a result, making art in formal learning settings devolves into either romanticized creativity or instrumental work to improve skills…

Process for growing a film epitaxially upon a MGO surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Clinical performance of a prototype flat-panel digital detector for general radiography

NASA Astrophysics Data System (ADS)

Huda, Walter; Scalzetti, Ernest M.; Roskopf, Marsha L.; Geiger, Robert

2001-08-01

Digital radiographs obtained using a prototype Digital Radiography System (Stingray) were compared with those obtained using conventional screen-film. Forty adult volunteers each had two identical radiographs taken at the same level of radiation exposure, one using screen-film and the other the digital detector. Each digital image was processed by hand to ensure that the printed quality was optimal. Ten radiologists compared the diagnostic image quality of the digital images with the corresponding film radiographs using a seven point ranking scheme.

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less

A translation micromirror with large quasi-static displacement and high surface quality

NASA Astrophysics Data System (ADS)

Xue, Yuan; He, Siyuan

2017-01-01

A large displacement with high surface quality translation micromirror is presented. The micromirror consists of a magnetic actuator and a mirror plate. The actuator and the mirror plate are fabricated separately using two processes and then bonded together. The actuator consists of a moving film which is a 20 µm thick nickel film fabricated by MetalMUMPs and a solenoid located underneath the moving film. The moving film is designed to curve up through the residual stress gradient in the nickel film and a curve-up mechanism which includes four trapezoidal plates and anchoring springs. The mirror plate is simply diced from a polished silicon wafer and coated with a metal thin film. The mirror plate is bonded onto the central ring of the moving film. A solenoid attracts the moving film along with the mirror plate downwards to realize translation. A quasi-static displacement of 123 µm is achieved at a driving current of 400 mA. A high mirror surface quality is realized, e.g. 15.6 m of curvature radius and 2 nm surface roughness.

75 FR 81555 - Approval and Promulgation of Air Quality Implementation Plans; Pennsylvania; Allegheny County's...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-28

... Techniques Guidelines for Large Appliance and Metal Furniture; Flat Wood Paneling; Paper, Film, and Foil... appliance and metal furniture; flat wood paneling; and paper, film, and foil surface coating processes. In... Control Techniques Guidelines for Large Appliance and Metal Furniture; Flat Wood Paneling; Paper, Film...

Radiographic Film Processing Quality Assurance: A Self-Teaching Workbook. Quality Assurance Series.

ERIC Educational Resources Information Center

Goldman, Lee W.

This workbook has been designed for use in conjunction with the manual, "Photographic Quality Assurance in Diagnostic Radiology, Nuclear Medicine and Radiation Therapy." Presented are several typical problems arising from the existence of variability and fluctuations in the automatic processing of radiographs, which unless corrected, can…

Sensitometric and archival evaluation of Kodak RA films in dental automatic processing.

PubMed

Thunthy, K H; Yeadon, W R; Winberg, R

1994-04-01

The Kodak Rapid Access System is an extension of the T-grain technology (T-Mat film). Unlike the T-Mat film, the T-Mat/Rapid Access film is forehardened by the addition of more hardener to the film emulsion. It can thus be processed rapidly in a Kodak Rapid Access medical processor in only 45 seconds dry-to-dry cycle by using the Kodak X-Omat RA/30 developer that does not contain a hardener. The absence of the hardener, glutaraldehyde, in the developer also makes this solution environmentally safer. In medical radiography, the T-Mat film has been replaced by the T-Mat/Rapid Access film. However, in dental extraoral radiography the T-Mat film is still being used because the processing solutions and the comparatively low temperatures of dental automatic processors are different from those used in medical radiography. This report shows that, for panoramic and other dental extraoral radiography, T-Mat films can be replaced by T-Mat/RA films by processing them in conventional Kodak X-Omat RP solutions using a dental automatic processing cycle. The differences in the sensitometric properties of the T-Mat and T-Mat/rapid Access films were negligible and therefore clinically insignificant. All films tested well for archival quality.

Effects of nisin-incorporated films on the microbiological and physicochemical quality of minimally processed mangoes.

PubMed

Barbosa, Ana Andréa Teixeira; Silva de Araújo, Hyrla Grazielle; Matos, Patrícia Nogueira; Carnelossi, Marcelo Augusto Guitierrez; Almeida de Castro, Alessandra

2013-06-17

The aim of this study is to examine the effects of nisin-incorporated cellulose films on the physicochemical and microbiological qualities of minimally processed mangoes. The use of antimicrobial films did not affect the physicochemical characteristics of mangoes and showed antimicrobial activity against Staphylococcus aureus, Listeria monocytogenes, Alicyclobacillus acidoterrestris and Bacillus cereus. The mango slices were inoculated with S. aureus and L. monocytogenes (10(7)CFU/g), and the viable cell numbers remained at 10(5) and 10(6)CFU/g, respectively, after 12days. In samples packed with antimicrobial films, the viable number of L. monocytogenes cells was reduced below the detection level after 4days. After 6days, a reduction of six log units was observed for S. aureus. In conclusion, nisin showed antimicrobial activity in mangoes without interfering with the organoleptic characteristics of the fruit. This result suggests that nisin could potentially be used in active packing to improve the safety of minimally processed mangoes. Copyright © 2013 Elsevier B.V. All rights reserved.

Structural and optical characteristics of GaAs films grown on Si/Ge substrates

NASA Astrophysics Data System (ADS)

Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

2018-03-01

A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

Cubic nitride templates

DOEpatents

Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

2013-04-30

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

Enhanced electrical stability of nitrate ligand-based hexaaqua complexes solution-processed ultrathin a-IGZO transistors

NASA Astrophysics Data System (ADS)

Choi, C.; Baek, Y.; Lee, B. M.; Kim, K. H.; Rim, Y. S.

2017-12-01

We report solution-processed, amorphous indium-gallium-zinc-oxide-based (a-IGZO-based) thin-film transistors (TFTs). Our proposed solution-processed a-IGZO films, using a simple spin-coating method, were formed through nitrate ligand-based metal complexes, and they were annealed at low temperature (250 °C) to achieve high-quality oxide films and devices. We investigated solution-processed a-IGZO TFTs with various thicknesses, ranging from 4 to 16 nm. The 4 nm-thick TFT films had smooth morphology and high-density, and they exhibited excellent performance, i.e. a high saturation mobility of 7.73  ±  0.44 cm2 V-1 s-1, a sub-threshold swing of 0.27 V dec-1, an on/off ratio of ~108, and a low threshold voltage of 3.10  ±  0.30 V. However, the performance of the TFTs degraded as the film thickness was increased. We further performed positive and negative bias stress tests to examine their electrical stability, and it was noted that the operating behavior of the devices was highly stable. Despite a small number of free charges, the high performance of the ultrathin a-IGZO TFTs was attributed to the small effect of the thickness of the channel, low bulk resistance, the quality of the a-IGZO/SiO2 interface, and high film density.

Toward Cost-Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High-Quality Si Films in a CaCl2 -based Molten Salt.

PubMed

Yang, Xiao; Ji, Li; Zou, Xingli; Lim, Taeho; Zhao, Ji; Yu, Edward T; Bard, Allen J

2017-11-20

Electrodeposition of Si films from a Si-containing electrolyte is a cost-effective approach for the manufacturing of solar cells. Proposals relying on fluoride-based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high-quality Si films from a CaCl 2 -based molten salt. Soluble Si IV -O anions generated from solid SiO 2 are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in the deposited Si film are controlled at low concentrations (both B and P are less than 1 ppm). In the photoelectrochemical measurements, the film shows p-type semiconductor character and large photocurrent. A p-n junction fabricated from the deposited Si film exhibits clear photovoltaic effects. This study represents the first step to the ultimate goal of developing a cost-effective manufacturing process for Si solar cells based on electrodeposition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study on optimizing ultrasonic irradiation period for thick polycrystalline PZT film by hydrothermal method.

PubMed

Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi

2013-04-01

The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.

Process for growing a film epitaxially upon a MgO surface

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1997-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

[Dry view laser imager--a new economical photothermal imaging method].

PubMed

Weberling, R

1996-11-01

The production of hard copies is currently achieved by means of laser imagers and wet film processing in systems attached either directly in or to the laser imager or in a darkroom. Variations in image quality resulting from a not always optimal wet film development are frequent. A newly developed thermographic film developer for laser films without liquid powdered chemicals, on the other hand, is environmentally preferable and reducing operating costs. The completely dry developing process provides permanent image documentation meeting the quality and safety requirements of RöV and BAK. One of the currently available systems of this type, the DryView Laser Imager is inexpensive and easy to install. The selective connection principle of the DryView Laser Imager can be expanded as required and accepts digital and/or analog interfaces with all imaging systems (CT, MR, DR, US, NM) from the various manufactures.

Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Chang, Ting-Chang; Chang, Guan-Chang; Hsu, Yung-En; Chen, Ying-Chung; Xu, Hong-Quan

2010-04-01

To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H2O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C- V, and J- E measurements.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Optimisation des proprietes physiques d'un composite carbone epoxy fabrique par le procede RFI

NASA Astrophysics Data System (ADS)

Koanda, Mahamat Mamadou Lamine

The RFI (Resin Film Infusion) process is a composite materials manufacturing process. Especially known for the small investment it requires, RFI processes are more and more widely used in the aeronautical industry. However a number of aspects of this process are still not well controlled. The quality of the final part depends on which process is used. In the case of RFI, controlling physical characteristics such as thickness, fiber volume fraction or void content remains a major challenge. This dissertation deals with the optimization of the physical properties of a carbon composite manufactured with RFI processes. The ASTMD3171 and ASTMD792 standards were used to measure the void content and fiber volume fraction. First, we introduced different layup sequences in the RFI process and evaluate their impact on the physical properties of the final product. The experiments show the primary mode A, with the resin film at the bottom, resulting in much better quality with controlled fiber volume fraction and void content. Mode B (film in the symmetrical plane) yields results identical to mode A except more irregular thicknesses. Mode C (symmetrical film in the laminate) produces locally unacceptable void contents. Mode D (resin film on the top of the laminate) yields much better results than mode A with the exception of the more irregular thicknesses. Making gaps and overlaps with the resin film has negative effects beyond 2.54cm (one inch) and should be avoided. Several C-scan observations of the manufactured samples showed a large accumulation of porosity in the resin rich areas, as well as surface defects. Ultimately we analyzed the cure cycle in light of the thermodynamic porosity models. It is evident that the diffusion phenomenon is essential in this process. Therefore a better conditioning of the resin film made by Cytec is required. An optimal design with a cycle stop and pressure lag yields the optimal cure cycle for the RFI process.

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

NASA Technical Reports Server (NTRS)

Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

1989-01-01

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Enhancing Soundtracks From Old Movies

NASA Technical Reports Server (NTRS)

Frazer, Robert E.

1992-01-01

Proposed system enhances soundtracks of old movies. Signal on optical soundtrack of film digitized and processed to reduce noise and improve quality; timing signals added, and signal recorded on compact disk. Digital comparator and voltage-controlled oscillator synchronizes speed of film-drive motor and compact disk motor. Frame-coded detector reads binary frame-identifying marks on film. Digital comparator generates error signal if marks on film do not match those on compact disk.

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.

Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects,more » like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.« less

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

NASA Astrophysics Data System (ADS)

Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Syed Sheraz, Ahmad; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2015-01-01

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

2014-08-01

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

The numerical simulation and experiment on extrusion roller embossing of light diffusion plate with micro-structure

NASA Astrophysics Data System (ADS)

Zang, Gongzheng; Fu, Zhihong; Zhang, Lei; Wan, Yue

2018-01-01

Extrusion roller embossing process has demonstrated the ability to produce polymer film with micro-structure. However the influence of various parameters on the forming quality has not been understood clearly. In this paper, a light diffusion plate with semi cylindrical micro-structure array as the research object, the influence of the main processing parameters such as roller speed, pressuring distance and polymer film temperature to the rolling quality was investigated in detail by simulation and experimental methods. The results show that the thickness of the light diffusion plate and the micro-structure fitting diameter increases with the increasing of the roll speed and the polymer film temperature, and decreases with the increasing of the pressing distance. Besides, the simulation results conformed well to the experimental results.

Sol–gel preparation of well-adhered films and long range ordered inverse opal films of BaTiO{sub 3} and Bi{sub 2}Ti{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Arjan, Wafa S.; King Faisal University, PO Box 380, Al Hofuf; Algaradah, Mohammed M.F.

Highlights: • Highly adaptable sols are presented for processing of the electroceramic materials BaTiO{sub 3} and Bi{sub 2}Ti{sub 2}O{sub 7}. • High quality thin films are produced by dip coating with good phase control. • Infiltration of cross-linked polystyrene templates led to high quality inverse opals. - Abstract: Barium and bismuth titanate thin films and well-ordered inverse opal films are produced by dip coating from sols containing titanium alkoxides with acetic acid, acetylacetone, methoxyethanol and water. The inverse opal preparations used crosslinked polystyrene opal templates. Heat treatment in air produced tetragonal BaTiO{sub 3} or mixtures of the hexagonal and tetragonalmore » phases, or phase pure Bi{sub 2}Ti{sub 2}O{sub 7}. Good quality films were obtained with a thickness of 5 μm from a single dipping, and the thickness could be increased by dipping multiple times. Inverse opals were well ordered and exhibited opalescence and photonic stop band effects.« less

Development and manufacture of reactive-transfer-printed CIGS photovoltaic modules

NASA Astrophysics Data System (ADS)

Eldada, Louay; Sang, Baosheng; Lu, Dingyuan; Stanbery, Billy J.

2010-09-01

In recent years, thin-film photovoltaic (PV) companies started realizing their low manufacturing cost potential, and grabbing an increasingly larger market share from multicrystalline silicon companies. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, high-quality CIGS grains, and a fast reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable print plates in the first stage, while in the second stage, the CIGS layer is formed by rapid heating with Se confinement. High quality CIGS films with large grains were produced on a full-scale manufacturing line, and resulted in high-efficiency large-form-factor modules. With 14% cell efficiency and 12% module efficiency, HelioVolt started to commercialize the process on its first production line with 20 MW nameplate capacity.

Efficient production of nanoparticle-loaded orodispersible films by process integration in a stirred media mill.

PubMed

Steiner, Denise; Finke, Jan Henrik; Kwade, Arno

2016-09-25

Orodispersible films possess a great potential as a versatile platform for nanoparticle-loaded oral dosage forms. In this case, poorly water-soluble organic materials were ground in a stirred media mill and embedded into a polymer matrix. The aim of this study was the shortening of this manufacturing process by the integration of several process steps into a stirred media mill without facing disadvantages regarding the film quality. Furthermore, this process integration is time conserving due to the high stress intensities provided in the mill and applicable for high solids contents and high suspension viscosities. Two organic materials, the model compound Anthraquinone and the active pharmaceutical ingredient Naproxen were investigated in this study. Besides the impact of the film processing on the crystallinity of the particles in the orodispersible film, a particle load of up to 50% was investigated with the new developed processing route. Additionally, a disintegration test was developed, combining an appropriate amount of saliva substitute and a clear endpoint determination. In summary, high nanoparticle loads in orodispersible films with good particle size preservation after film redispersion in water as well as a manufacturing of the film casting mass within a few minutes in a stirred media mill was achieved. Copyright © 2016 Elsevier B.V. All rights reserved.

Centralized automated quality assurance for large scale health care systems. A pilot method for some aspects of dental radiography.

PubMed

Benn, D K; Minden, N J; Pettigrew, J C; Shim, M

1994-08-01

President Clinton's Health Security Act proposes the formation of large scale health plans with improved quality assurance. Dental radiography consumes 4% ($1.2 billion in 1990) of total dental expenditure yet regular systematic office quality assurance is not performed. A pilot automated method is described for assessing density of exposed film and fogging of unexposed processed film. A workstation and camera were used to input intraoral radiographs. Test images were produced from a phantom jaw with increasing exposure times. Two radiologists subjectively classified the images as too light, acceptable, or too dark. A computer program automatically classified global grey level histograms from the test images as too light, acceptable, or too dark. The program correctly classified 95% of 88 clinical films. Optical density of unexposed film in the range 0.15 to 0.52 measured by computer was reliable to better than 0.01. Further work is needed to see if comprehensive centralized automated radiographic quality assurance systems with feedback to dentists are feasible, are able to improve quality, and are significantly cheaper than conventional clerical methods.

Polycrystalline Terfenol-D thin films grown at CMOS compatible temperature

NASA Astrophysics Data System (ADS)

Panduranga, Mohanchandra K.; Lee, Taehwan; Chavez, Andres; Prikhodko, Sergey V.; Carman, Gregory P.

2018-05-01

Terfenol-D thin films have the largest magnetoelastic coefficient at room temperature of any material system and thus are ideal for voltage induced strain multiferroics. However, Terfenol-D requires 500 0C processing temperature which prohibits its use in CMOS devices where processing temperatures must be below 450 0C. In this paper, we describe a deposition process that produces quality Terfenol-D film with processing temperature below 450 0C. These films have extremely smooth surfaces (Ra˜1nm) with excellent magnetoelastic properties (λs=880 microstrain) similar to its bulk polycrystalline counterpart. The films are produced by DC magnetron sputtering and deposited on heated substrates at 250 0C and post annealed at either 250 0C, 400 0C or 450 0C. Among these films only the film annealed at 450 0C produces crystalline Terfenol-D with a face centered cubic crystal structure and saturation magnetization of ˜700 emu/cc. MOKE Magnetic hysteresis loops measured with four point bending fixture show compressive strain dramatically alter the coercive field from 2300 Oe to 1600 Oe.

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

PubMed Central

Lin, Tiegui; Wang, Jian; Liu, Gang; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

2017-01-01

To fabricate high-quality polycrystalline VO2 thin film with a metal–insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO2 films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO2 film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations. PMID:28772990

Room-temperature fabrication of a Ga-Sn-O thin-film transistor

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Takagi, Ryo; Umeda, Kenta; Kimura, Mutsumi

2017-08-01

We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. It is achieved that the field-effect mobility is 0.83 cm2 V-1 s-1 and the on/off ratio is roughly 106. A critical process parameter is the deposition pressure during the RF magnetron sputtering, which determines a balance between competing mechanisms of sputtering damages and chemical reactions, because the film quality has to be enhanced solely during the sputtering deposition. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.

Effect of extrusion process on the functional properties of high amylose corn starch edible films and its application in mango (Mangifera indica L.) cv. Tommy Atkins.

PubMed

Calderón-Castro, Abraham; Vega-García, Misael Odín; de Jesús Zazueta-Morales, José; Fitch-Vargas, Perla Rosa; Carrillo-López, Armando; Gutiérrez-Dorado, Roberto; Limón-Valenzuela, Víctor; Aguilar-Palazuelos, Ernesto

2018-03-01

Starch is an attractive raw material as ingredient for edible film manufacture because of its low cost, abundant availability, renewability, and biodegradability. Nevertheless, starch based films exhibit several disadvantages such as brittleness and poor mechanical and barrier properties, which restrict its application for food packaging. The use of the extrusion technology as a pretreatment of the casting technique to change the starch structure in order to obtain edible films, may constitute an alternative to generate coatings with good functional properties and maintain longer the postharvest quality and shelf life of fruits. For this reason, the objective of this study was to optimize the conditions of an extrusion process to obtain a formulation of modified starch to elaborate edible films with good functional properties using the casting technique and assess the effect during the storage when applied on a model fruit. The best conditions of the extrusion process and concentration of plasticizers were obtained using response surface methodology. From optimization study, it was found that appropriate conditions to obtain starch edible films with the best mechanical and barrier properties were an extrusion temperature of 100 °C and a screw speed of 120 rpm, while the glycerol content was 16.73%. Also, once applied in fruit, the loss of quality attributes was diminished.

Portal verification using the KODAK ACR 2000 RT storage phosphor plate system and EC films. A semiquantitative comparison.

PubMed

Geyer, Peter; Blank, Hilbert; Alheit, Horst

2006-03-01

The suitability of the storage phosphor plate system ACR 2000 RT (Eastman Kodak Corp., Rochester, MN, USA), that is destined for portal verification as well as for portal simulation imaging in radiotherapy, had to be proven by the comparison with a highly sensitive verification film. The comparison included portal verification images of different regions (head and neck, thorax, abdomen, and pelvis) irradiated with 6- and 15-MV photons and electrons. Each portal verification image was done at the storage screen and the EC film as well, using the EC-L cassettes (both: Eastman Kodak Corp., Rochester, MN, USA) for both systems. The soft-tissue and bony contrast and the brightness were evaluated and compared in a ranking of the two compared images. Different phantoms were irradiated to investigate the high- and low-contrast resolution. To account for quality assurance application, the short-time exposure of the unpacked and irradiated storage screen by green and red room lasers was also investigated. In general, the quality of the processed ACR images was slightly higher than that of the films, mostly due to cases of an insufficient exposure to the film. The storage screen was able to verify electron portals even for low electron energies with only minor photon contamination. The laser lines were sharply and clearly visible on the ACR images. The ACR system may replace the film without any noticeable decrease in image quality thereby reducing processing time and saving the costs of films and avoiding incorrect exposures.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Advanced Microwave Ferrite Research (AMFeR): Phase Two

DTIC Science & Technology

2006-12-31

motion for the single crystal LPE films were a qualitative success, but a complete set of parameters for these films has not yet been achieved. Key...biasing field. In order to address these issues, we investigated and optimized a new LPE flux system to grow high quality thick films and bulk single...self-biased circulators. III. Methodology: BaM thick film and bulk single crystal growth by LPE process BaFe 120 19 flux melt was prepared from a

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1991-01-01

This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

1992-01-01

A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

High-performance formamidinium-based perovskite solar cells via microstructure-mediated δ-to-α phase transformation

DOE PAGES

Liu, Tanghao; Zong, Yingxia; Zhou, Yuanyuan; ...

2017-03-14

The δ → α phase transformation is a crucial step in the solution-growth process of formamidinium-based lead triiodide (FAPbI 3) hybrid organic–inorganic perovskite (HOIP) thin films for perovskite solar cells (PSCs). Because the addition of cesium (Cs) stabilizes the α phase of FAPbI 3-based HOIPs, here our research focuses on FAPbI 3(Cs) thin films. We show that having a large grain size in the δ-FAPbI 3(Cs) non-perovskite intermediate films is essential for the growth of high-quality α-FAPbI 3(Cs) HOIP thin films. Here grain coarsening and phase transformation occur simultaneously during the thermal annealing step. A large starting grain size inmore » the δ-FAPbI 3(Cs) thin films suppresses grain coarsening, precluding the formation of voids at the final α-FAPbI 3(Cs)–substrate interfaces. PSCs based on the interface void-free α-FAPbI 3(Cs) HOIP thin films are much more efficient and stable in the ambient atmosphere. This interesting finding inspired us to develop a simple room-temperature aging method for preparing coarse-grained δ-FAPbI 3(Cs) intermediate films, which are subsequently converted to coarse-grained, high-quality α-FAPbI 3(Cs) HOIP thin films. As a result, this study highlights the importance of microstructure meditation in the processing of formamidinium-based PSCs.« less

Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

NASA Astrophysics Data System (ADS)

Sato, Tadashi; Yamamoto, Kenichi; Kambara, Junji; Kitahara, Kuninori; Hara, Akito

2009-12-01

Hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) have attracted attention for application to the operation of organic light-emitting diodes (OLEDs). The monolithic integration of nc-Si:H TFTs and polycrystalline silicon (poly-Si) TFTs and the use of nc-Si:H TFTs for operating an OLED are candidate technologies to achieve OLED system-on-glass. To develop such a system, it is necessary to fabricate poly-Si films without employing thermal dehydrogenation because hydrogen needs to be maintained in the channel region of nc-Si:H TFTs. In this study, we optimized the laser dehydrogenation process as a substitute for thermal dehydrogenation by using a diode-pumped solid-state continuous-wave green laser (Nd:YVO4, 2ω=532 nm) to fabricate large lateral poly-Si films with grain sizes of 3×20 µm2. The performance of poly-Si TFTs is well known to be sensitive to the quality of poly-Si films. In order to evaluate the electrical properties of poly-Si films, TFTs were fabricated by conventional processes. The field-effect mobility, threshold voltage, and S-value of the poly-Si TFTs were 220 cm2 V-1 s-1, -1.0 V, and 0.45 V/dec, respectively. The quality of the poly-Si film fabricated in this experiment was sufficiently high for the integration of peripheral circuits.

Effects of Na and secondary phases on physical properties of SnS thin film after sulfurization process

NASA Astrophysics Data System (ADS)

Kawano, Yu; Kodani, Yuto; Chantana, Jakapan; Minemoto, Takashi

2016-09-01

2.48%-efficient SnS thin film solar cell is obtained under thermal evaporation method by optimizing growth temperature. The method to fabricate SnS films is limited by growth temperature, which should not be over 200 °C to prevent re-evaporation of SnS. To further enhance SnS grains, SnS films were annealed in H2S gas from 200 to 500 °C, namely sulfurization process. SnS grain size was increased with sulfurization temperature of above 400 °C however, secondary phase grains on film’s surface were observed owing to the accumulated Na, diffused from soda-lime glass substrate into the film, thus deteriorating film’s quality, implied by Urbach energy.

Freestanding films of crosslinked gold nanoparticles prepared via layer-by-layer spin-coating.

PubMed

Schlicke, Hendrik; Schröder, Jan H; Trebbin, Martin; Petrov, Alexey; Ijeh, Michael; Weller, Horst; Vossmeyer, Tobias

2011-07-29

A new, extremely efficient method for the fabrication of films comprised of gold nanoparticles (GNPs) crosslinked by organic dithiols is presented in this paper. The method is based on layer-by-layer spin-coating of both components, GNPs and crosslinker, and enables the deposition of films several tens of nanometers in thickness within a few minutes. X-ray diffraction and conductance measurements reveal the proper adjustment concentration of the crosslinker solution of the critical is in order to prevent the destabilization and coalescence of particles. UV/vis spectroscopy, atomic force microscopy, and conductivity measurements indicate that films prepared via layer-by-layer spin-coating are of comparable quality to coatings prepared via laborious layer-by-layer self-assembly using immersion baths. Because spin-coated films are not bound chemically to the substrate, they can be lifted-off by alkaline underetching and transferred onto 3d-electrodes to produce electrically addressable, freely suspended films. Comparative measurements of the sheet resistances indicate that the transfer process does not compromise the film quality.

Freestanding films of crosslinked gold nanoparticles prepared via layer-by-layer spin-coating

NASA Astrophysics Data System (ADS)

Schlicke, Hendrik; Schröder, Jan H.; Trebbin, Martin; Petrov, Alexey; Ijeh, Michael; Weller, Horst; Vossmeyer, Tobias

2011-07-01

A new, extremely efficient method for the fabrication of films comprised of gold nanoparticles (GNPs) crosslinked by organic dithiols is presented in this paper. The method is based on layer-by-layer spin-coating of both components, GNPs and crosslinker, and enables the deposition of films several tens of nanometers in thickness within a few minutes. X-ray diffraction and conductance measurements reveal the proper adjustment concentration of the crosslinker solution of the critical is in order to prevent the destabilization and coalescence of particles. UV/vis spectroscopy, atomic force microscopy, and conductivity measurements indicate that films prepared via layer-by-layer spin-coating are of comparable quality to coatings prepared via laborious layer-by-layer self-assembly using immersion baths. Because spin-coated films are not bound chemically to the substrate, they can be lifted-off by alkaline underetching and transferred onto 3d-electrodes to produce electrically addressable, freely suspended films. Comparative measurements of the sheet resistances indicate that the transfer process does not compromise the film quality.

Polymer-templated nucleation and crystal growth of perovskite films for solar cells with efficiency greater than 21%

NASA Astrophysics Data System (ADS)

Bi, Dongqin; Yi, Chenyi; Luo, Jingshan; Décoppet, Jean-David; Zhang, Fei; Zakeeruddin, Shaik Mohammed; Li, Xiong; Hagfeldt, Anders; Grätzel, Michael

2016-10-01

The past several years have witnessed the rapid emergence of a class of solar cells based on mixed organic-inorganic halide perovskites. Today’s state-of-the-art perovskite solar cells (PSCs) employ various methods to enhance nucleation and improve the smoothness of the perovskite films formed via solution processing. However, the lack of precise control over the crystallization process creates a risk of forming unwanted defects, for example, pinholes and grain boundaries. Here, we introduce an approach to prepare perovskite films of high electronic quality by using poly(methyl methacrylate) (PMMA) as a template to control nucleation and crystal growth. We obtain shiny smooth perovskite films of excellent electronic quality, as manifested by a remarkably long photoluminescence lifetime. We realize stable PSCs with excellent reproducibility showing a power conversion efficiency (PCE) of up to 21.6% and a certified PCE of 21.02% under standard AM 1.5G reporting conditions.

Process for etching mixed metal oxides

DOEpatents

Ashby, Carol I. H.; Ginley, David S.

1994-01-01

An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

Integrated Application of Quality-by-Design Principles to Drug Product Development: A Case Study of Brivanib Alaninate Film-Coated Tablets.

PubMed

Badawy, Sherif I F; Narang, Ajit S; LaMarche, Keirnan R; Subramanian, Ganeshkumar A; Varia, Sailesh A; Lin, Judy; Stevens, Tim; Shah, Pankaj A

2016-01-01

Modern drug product development is expected to follow quality-by-design (QbD) paradigm. At the same time, although there are several issue-specific examples in the literature that demonstrate the application of QbD principles, a holistic demonstration of the application of QbD principles to drug product development and control strategy, is lacking. This article provides an integrated case study on the systematic application of QbD to product development and demonstrates the implementation of QbD concepts in the different aspects of product and process design for brivanib alaninate film-coated tablets. Using a risk-based approach, the strategy for development entailed identification of product critical quality attributes (CQAs), assessment of risks to the CQAs, and performing experiments to understand and mitigate identified risks. Quality risk assessments and design of experiments were performed to understand the quality of the input raw materials required for a robust formulation and the impact of manufacturing process parameters on CQAs. In addition to the material property and process parameter controls, the proposed control strategy includes use of process analytical technology and conventional analytical tests to control in-process material attributes and ensure quality of the final product. Copyright © 2016. Published by Elsevier Inc.

An acetate precursor process for BSCCO (2223) thin films and coprecipitated powders

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1992-01-01

Since the discovery of high temperature superconducting oxides much attention has been paid to finding better and useful ways to take advantage of the special properties exhibited by these materials. One such process is the development of thin films for engineering applications. Another such process is the coprecipitation route to producing superconducting powders. An acetate precursor process for use in thin film fabrication and a chemical coprecipitation route to Bismuth based superconducting materials has been developed. Data obtained from the thin film process were inconclusive to date and require more study. The chemical coprecipitation method of producing bulk material is a viable method, and is preferred over the previously used solid state route. This method of powder production appears to be an excellent route to producing thin section tape cast material and screen printed devices, as it requires less calcines than the oxide route to produce quality powders.

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Observation of defects evolution in electronic materials

NASA Astrophysics Data System (ADS)

Jang, Jung Hun

Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2 annealing, ion-implantation, and thermal oxidation. Advanced characterization techniques have been used to obtain information about strain, relaxation, layer thickness, elemental composition, defects, surface/interface morphology changes and so on. Based on the understanding of defects behavior during the strain relaxation after post thermal processes, a new manufacturing process to obtain highly-relaxed and thin Si1-xGex layers, which could be used as virtual substrates for strained-Si applications, was found.

Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kale, Abhijit; Beese, Emily; Saenz, Theresa

NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

PubMed

Faraz, Tahsin; van Drunen, Maarten; Knoops, Harm C M; Mallikarjunan, Anupama; Buchanan, Iain; Hausmann, Dennis M; Henri, Jon; Kessels, Wilhelmus M M

2017-01-18

The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiN x ) films used for a variety of applications in device manufacturing. In many cases, a low temperature (<400 °C) deposition process is desired that yields high quality SiN x films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiN x using a mono-aminosilane precursor, di(sec-butylamino)silane (DSBAS, SiH 3 N( s Bu) 2 ), and N 2 plasma. Material properties have been analyzed over a wide stage temperature range (100-500 °C) and compared with those obtained in our previous work for SiN x deposited using a bis-aminosilane precursor, bis(tert-butylamino)silane (BTBAS, SiH 2 (NH t Bu) 2 ), and N 2 plasma. Dense films (∼3.1 g/cm 3 ) with low C, O, and H contents at low substrate temperatures (<400 °C) were obtained on planar substrates for this process when compared to other processes reported in the literature. The developed process was also used for depositing SiN x films on high aspect ratio (4.5:1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF/H 2 O = 1:100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination, and ion directionality during SiN x deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤ 2 nm/min) were observed at the top, sidewall, and bottom trench regions of the most conformal film deposited at low substrate temperature (<400 °C), which confirmed that the process is applicable for depositing high quality SiN x films on both planar and 3D substrate topographies.

Formation of pyrite (FeS{sub 2}) thin films by thermal sulfurization of dc magnetron sputtered iron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soukup, R. J.; Prabukanthan, P.; Ianno, N. J.

2011-01-15

Iron films deposited by direct current magnetron sputtering onto glass substrates were converted into FeS{sub 2} films by thermal sulfurization. Experiments were carried out to optimize the sulfurization process, and the formation of FeS{sub 2} thin films was investigated under different annealing temperatures and times. High quality FeS{sub 2} films were fabricated using this process, and single phase pyrite films were obtained after sulfurization in a sulfur and nitrogen atmosphere at 450 deg. C for 1 h. Film crystallinity and phase identification were determined by using x-ray diffraction. The cubic phase pyrite films prepared were p-type, and scanning electron microscopymore » studies exhibited a homogeneous surface of pyrite. The authors have found that the best Ohmic contact for their pyrite thin films, using inexpensive metals, was Ni. The following were chosen for the study: Al, Mo, Fe, and Ni, and the one that led to the lowest resistance, 333 {Omega}, was Ni.« less

Nanostructured zinc oxide films synthesized by successive chemical solution deposition for gas sensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lupan, O.; Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816-2385; Chow, L.

2009-01-08

Nanostructured ZnO thin films have been deposited using a successive chemical solution deposition method. The structural, morphological, electrical and sensing properties of the films were studied for different concentrations of Al-dopant and were analyzed as a function of rapid photothermal processing temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron and micro-Raman spectroscopy. Electrical and gas sensitivity measurements were conducted as well. The average grain size is 240 and 224 A for undoped ZnO and Al-doped ZnO films, respectively. We demonstrate that rapid photothermal processing is an efficient method for improving themore » quality of nanostructured ZnO films. Nanostructured ZnO films doped with Al showed a higher sensitivity to carbon dioxide than undoped ZnO films. The correlations between material compositions, microstructures of the films and the properties of the gas sensors are discussed.« less

[Research & development and evaluation of oral films].

PubMed

Ren, Lian-Jie; Liu, Juan; Ma, Jun-Wei; Yan, Jia-Chen; Yin, Li-Fang

2017-10-01

Oral film is a new type of oral preparation. Due to portability, simple preparation process and good clinical compliance, oral films have become the focus of novel drug delivery system in recent years. Meanwhile, oral films have been gradually used in the development of Chinese medicine preparations. According to the application and approval situation of different types of oral films both at home and abroad in recent years, their research and development status was analyzed, including the basic concept, formulation, manufacturing process and quality control, as well as related progress and development prospects of oral films applied in traditional Chinese medicine. Some suggestions on the technical evaluation of oral films were put forward by considering specific requirements from regulatory agencies. This paper could provide some references for the development and evaluation of oral films. Due to the complexity of the drug substances and the particularity of the drug product, the development and application of oral films in traditional Chinese medicine are still faced with opportunity and challenges. Copyright© by the Chinese Pharmaceutical Association.

Pulsed photoinitiated fabrication of inkjet printed titanium dioxide/reduced graphene oxide nanocomposite thin films.

PubMed

Bourgeois, Briley; Luo, Sijun; Riggs, Brian; Ji, Yaping; Adireddy, Shiva; Schroder, Kurt; Farnsworth, Stan; Chrisey, Douglas; Escarra, Matthew

2018-08-03

This work reports a new technique for scalable and low-temperature processing of nanostructured TiO 2 thin films, allowing for practical manufacturing of TiO 2 -based devices such as perovskite solar cells at low-temperature or on flexible substrates. Dual layers of dense and mesoporous TiO 2 /graphitic oxide nanocomposite films are synthesized simultaneously using inkjet printing and pulsed photonic irradiation. Investigation of process parameters including precursor concentration (10-20 wt%) and exposure fluence (4.5-8.5 J cm -2 ) reveals control over crystalline quality, graphitic oxide phase, film thickness, dendrite density, and optical properties. Raman spectroscopy shows the E g peak, characteristic of anatase phase titania, increases in intensity with higher photonic irradiation fluence, suggesting increased crystallinity through higher fluence processing. Film thickness and dendrite density is shown to increase with precursor concentration in the printed ink. The dense base layer thickness was controlled between 20 and 80 nm. The refractive index of the films is determined by ellipsometry to be 1.92 ± 0.08 at 650 nm. Films exhibit an energy weighted optical transparency of 91.1%, in comparison to 91.3% of a thermally processed film, when in situ carbon materials were removed. Transmission and diffuse reflectance are used to determine optical band gaps of the films ranging from 2.98 to 3.38 eV in accordance with the photonic irradiation fluence and suggests tunability of TiO 2 phase composition. The sheet resistance of the synthesized films is measured to be 14.54 ± 1.11 Ω/□ and 28.90 ± 2.24 Ω/□ for films as-processed and after carbon removal, respectively, which is comparable to high temperature processed TiO 2 thin films. The studied electrical and optical properties of the light processed films show comparable results to traditionally processed TiO 2 while offering the distinct advantages of scalable manufacturing, low-temperature processing, simultaneous bilayer fabrication, and in situ formation of removable carbon nanocomposites.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Feigelson, Boris N.; Anderson, Travis J.

2014-08-14

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at halfmore » maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.« less

Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

DOEpatents

Deng, Xunming; Povolny, Henry S.

2004-06-29

A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

PubMed Central

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P. H.; Bedzyk, Michael J.; Ferragut, Rafael; Marks, Tobin J.; Facchetti, Antonio

2015-01-01

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. PMID:25733848

Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

PubMed

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

2015-03-17

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

NASA Technical Reports Server (NTRS)

Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

1992-01-01

High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

Process for etching mixed metal oxides

DOEpatents

Ashby, C.I.H.; Ginley, D.S.

1994-10-18

An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

PubMed

Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

2015-11-03

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

PubMed Central

Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

2015-01-01

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

PubMed

Zhang, Xue; Lee, Hyeonju; Kwon, Jung-Hyok; Kim, Eui-Jik; Park, Jaehoon

2017-07-31

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242

Thermoplastic processing of proteins for film formation--a review.

PubMed

Hernandez-Izquierdo, V M; Krochta, J M

2008-03-01

Increasing interest in high-quality food products with increased shelf life and reduced environmental impact has encouraged the study and development of edible and/or biodegradable polymer films and coatings. Edible films provide the opportunity to effectively control mass transfer among different components in a food or between the food and its surrounding environment. The diversity of proteins that results from an almost limitless number of side-chain amino-acid sequential arrangements allows for a wide range of interactions and chemical reactions to take place as proteins denature and cross-link during heat processing. Proteins such as wheat gluten, corn zein, soy protein, myofibrillar proteins, and whey proteins have been successfully formed into films using thermoplastic processes such as compression molding and extrusion. Thermoplastic processing can result in a highly efficient manufacturing method with commercial potential for large-scale production of edible films due to the low moisture levels, high temperatures, and short times used. Addition of water, glycerol, sorbitol, sucrose, and other plasticizers allows the proteins to undergo the glass transition and facilitates deformation and processability without thermal degradation. Target film variables, important in predicting biopackage performance under various conditions, include mechanical, thermal, barrier, and microstructural properties. Comparisons of film properties should be made with care since results depend on parameters such as film-forming materials, film formulation, fabrication method, operating conditions, testing equipment, and testing conditions. Film applications include their use as wraps, pouches, bags, casings, and sachets to protect foods, reduce waste, and improve package recyclability.

Cibachrome testing. [photographic processing and printing materials

NASA Technical Reports Server (NTRS)

Weinstein, M. S.

1974-01-01

The use of Cibachrome products as a solution to problems encountered when contact printing Kodak film type SO-397 onto Kodak Ektrachrome color reversal paper type 1993 is investigated. A roll of aerial imagery consisting of Kodak film types SO-397 and 2443 was contact printed onto Cibachrome and Kodak materials and compared in terms of color quality, resolution, cost, and compatibility with existing equipment and techniques. Objective measurements are given in terms of resolution and sensitometric response. Comparison prints and transparencies were viewed and ranked according to overall quality and aesthetic appeal. It is recommended that Cibachrome Print material be used in place of Kodak Ektachrome paper because it is more easily processed, the cost is equivalent, and it provides improved resolution, color quality, and image fade resistance.

Delaminated Transfer of CVD Graphene

NASA Astrophysics Data System (ADS)

Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

NASA Astrophysics Data System (ADS)

Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

2018-05-01

GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

Optimization of the deposition conditions and structural characterization of Y1Ba2Cu3O(7-x) thin superconducting films

NASA Technical Reports Server (NTRS)

Chrzanowski, J.; Meng-Burany, S.; Xing, W. B.; Curzon, A. E.; Heinrich, B.; Irwin, J. C.; Cragg, R. A.; Zhou, H.; Habib, F.; Angus, V.

1995-01-01

Two series of Y1Ba2Cu3O(z) thin films deposited on (001) LaAl03 single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O2) and substrate temperature of the deposition process Th, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j(sub c) and T(sub c) exhibited T(sub c) greater than or equal to 91 K and j(sub c) greater than or equal to 4 x 106 A/sq cm, at 77 K. Close correlations between the structural quality of the film, the growth parameters (p(O2), T(sub h)) and j(sub c) and T(sub c) have been found.

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

PubMed

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Experimental investigation on the spiral trepanning of K24 superalloy with femtosecond laser

NASA Astrophysics Data System (ADS)

Wang, Maolu; Yang, Lijun; Zhang, Shuai; Wang, Yang

2018-05-01

Film cooling holes are crucial for improving the performance of the aviation engine. In the paper, the processing of the film cooling holes on K24 superalloy by femtosecond laser is investigated. By comparing the three different drilling methods, the spiral trepanning method is chosen, and all the drilling experiments are carried out in this way. The experimental results show that the drilling of femtosecond laser pulses has distinct merits against that of the traditional long pulse laser, which can realize the "cold" processing with less recasting layer and less crack. The influence of each process parameter on roundness and taper, which are the important parameters to measure the quality of holes, is analyzed in detail, and the method to decrease it is proposed. To further reduce the recasting layer, the processing quality of the inner wall of the micro hole is investigated by scanning electron microscopy (SEM) equipped with energy disperse spectroscopy (EDS), the mechanism of the femtosecond laser interaction with K24 superalloy is further revealed. The investigation to the film hole machining by femtosecond laser has important practical significance.

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

2006-01-01

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process

NASA Astrophysics Data System (ADS)

Liu, Wei; Tian, Jian-Guo; Li, Zu-Bin; He, Qing; Li, Feng-Yan; Li, Chang-Jian; Sun, Yun

2009-03-01

During the selenization process of CIGS thin films, the relation between the element loss rate and the precursor depositions are analyzed. The growth of the CIGS thin films during the selenization process is investigated by the novel in situ resistance measurement, by which the formation of compound semiconductors can be observed directly and simultaneously. Their structures, phase evolutions and element losses are analyzed by XRD and XRF. Based on the experimental results, it can be concluded that the phase transforms have nothing to do with the deposition sequences of precursors, while the element loss rates are related to the deposition sequences in this process. In addition, element loss mechanisms of CIGS thin films prepared by the selenization process are analyzed by the phase evolutions and chemical combined path in the In, Ga-Se reaction processes. Moreover it is verified that the element losses are depressed by increasing the ramping-up rate finally. The results provide effective methods to fabricate high-quality CIGS thin films with low element losses.

Facile fabrication of large-grain CH3NH3PbI3−xBrx films for high-efficiency solar cells via CH3NH3Br-selective Ostwald ripening

PubMed Central

Yang, Mengjin; Zhang, Taiyang; Schulz, Philip; Li, Zhen; Li, Ge; Kim, Dong Hoe; Guo, Nanjie; Berry, Joseph J.; Zhu, Kai; Zhao, Yixin

2016-01-01

Organometallic halide perovskite solar cells (PSCs) have shown great promise as a low-cost, high-efficiency photovoltaic technology. Structural and electro-optical properties of the perovskite absorber layer are most critical to device operation characteristics. Here we present a facile fabrication of high-efficiency PSCs based on compact, large-grain, pinhole-free CH3NH3PbI3−xBrx (MAPbI3−xBrx) thin films with high reproducibility. A simple methylammonium bromide (MABr) treatment via spin-coating with a proper MABr concentration converts MAPbI3 thin films with different initial film qualities (for example, grain size and pinholes) to high-quality MAPbI3−xBrx thin films following an Ostwald ripening process, which is strongly affected by MABr concentration and is ineffective when replacing MABr with methylammonium iodide. A higher MABr concentration enhances I–Br anion exchange reaction, yielding poorer device performance. This MABr-selective Ostwald ripening process improves cell efficiency but also enhances device stability and thus represents a simple, promising strategy for further improving PSC performance with higher reproducibility and reliability. PMID:27477212

Plastic flexible films waste management - A state of art review.

PubMed

Horodytska, O; Valdés, F J; Fullana, A

2018-04-21

Plastic flexible films are increasingly used in many applications due to their lightness and versatility. In 2014, the amount of plastic films represented 34% of total plastic packaging produced in UK. The flexible film waste generation rises according to the increase in number of applications. Currently, in developed countries, about 50% of plastics in domestic waste are films. Moreover, about 615,000 tonnes of agricultural flexible waste are generated in the EU every year. A review of plastic films recycling has been conducted in order to detect the shortcomings and establish guidelines for future research. This paper reviews plastic films waste management technologies from two different sources: post-industrial and post-consumer. Clean and homogeneous post-industrial waste is recycled through closed-loop or open-loop mechanical processes. The main differences between these methods are the quality and the application of the recycled materials. Further research should be focused on closing the loops to obtain the highest environmental benefits of recycling. This could be accomplished through minimizing the material degradation during mechanical processes. Regarding post-consumer waste, flexible films from agricultural and packaging sectors have been assessed. The agricultural films and commercial and industrial flexible packaging are recycled through open-loop mechanical recycling due to existing selective waste collection routes. Nevertheless, the contamination from the use phase adversely affects the quality of recycled plastics. Therefore, upgrading of current washing lines is required. On the other hand, household flexible packaging shows the lowest recycling rates mainly because of inefficient sorting technologies. Delamination and compatibilization methods should be further developed to ensure the recycling of multilayer films. Finally, Life Cycle Assessment (LCA) studies on waste management have been reviewed. A lack of thorough LCA on plastic films waste management systems was identified. Copyright © 2018 Elsevier Ltd. All rights reserved.

Plasma-assisted synthesis of MoS2

NASA Astrophysics Data System (ADS)

Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

2018-03-01

There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

NASA Astrophysics Data System (ADS)

Masuda, Shin; Seki, Atsushi; Masuda, Yoichiro

2010-02-01

We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.

A method of producing high quality oxide and related films on surfaces

NASA Technical Reports Server (NTRS)

Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

1991-01-01

Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

NASA Astrophysics Data System (ADS)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

New barrierless copper-alloy film for future applications

NASA Astrophysics Data System (ADS)

Lin, Chon-Hsin Lin

2015-09-01

Since Cu metallization results in a conductivity and an electromigration resistance greater than those of Al, it has become popular for making Si-based interconnects for numerous devices in the field of microelectronics. Following the current trend of miniaturization required for most electronic components, there is a greater need for further size reduction in Si-based devices. The most critical side effect of size reduction is the increase in electronic scattering and resistivity when the barrier-layer thickness is further reduced. To explore advanced Cu-metallization methods and to develop a more economical manufacturing process for Cu-alloy films, the development of Cu materials having better quality and higher thermal stability becomes imperative for the metallization and annealing processes. For this purpose, we first fabricated Cu(GeNx) films and examined their thermal stability and electrical reliability after either cyclic or isothermal annealing. The excellent thermal and electrical properties make these new Cu-alloy films highly promising for applications that require more reliable and inexpensive copper interconnects. In this study, we fabricated Cu alloy films by doping a minute amount of Ge or GeNx, respectively, into the Cu films via barrierless Cu metallization, an inexpensive manufacturing method. Using these newly fabricated alloy films, we were able to eliminate or at least substantially reduce the detrimental interaction between the alloy and the barrierless Si substrate. The Cu(GeNx) films also exhibited high thermal stability, low resistivity and leakage current, and long time-dependent dielectric breakdown (TDDB) lifetimes, making such novel films a candidate for high-quality, economical, and more reliable Cu interconnects.

Computational Analysis of Splash Occurring in the Deposition Process in Annular-Mist Flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Heng; Koshizuka, Seiichi; Oka, Yoshiaki

2004-07-01

The deposition process of a single droplet on the film is numerically simulated by the Moving Particle Semi-implicit (MPS) method to analyze the possibility and effect of splash occurring in the deposition process in BWR condition. The model accounts for the presence of inertial, gravitation, viscous and surface tension and is validated by comparison with experiment results. A simple one-dimensional mixture model is developed to calculate the necessary parameters for the simulation of deposition in BWR condition. The deposition process of a single droplet in BWR condition is simulated. The effect of impact angle of droplet and the velocity ofmore » liquid film are analyzed. A film buffer model is developed to fit the simulation results of critical value for splash. A correlation of critical Weber number for splash in BWR condition is obtained and used to analyze the effect of splash. It is found that the splash play important role in the deposition and re-entrainment process in high quality condition in BWR. The mass fraction of re-entrainment caused by splash in different quality condition is also calculated. (authors)« less

High quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices

NASA Astrophysics Data System (ADS)

Lu, Zhongdan; Meng, Fanying; Cui, Yanfeng; Shi, Jianhua; Feng, Zhiqiang; Liu, Zhengxin

2013-02-01

High-quality tungsten-doped indium oxide (IWO) films are deposited on glass substrates at room temperature by the reactive plasma deposition (RPD) process under different oxygen/argon (O2/Ar) ratios. It is revealed that the O2/Ar ratio plays an important role in obtaining high conductivity without compromising the optical transmission of the films. The effect of the annealing temperature on the structure, electrical and optical properties of IWO thin films is investigated. The as-deposited film is crystalline and then re-crystallizes by postannealing. In this work, the IWO film with the O2/Ar ratio of 14% annealed at 220 °C exhibits the best electrical conductivity, with a lowest resistivity of 3.34 × 10-4 Ω cm and a highest mobility of 77.8 cm2 V-1 s-1, and which has the average transmittance of 85.50% (visible region) and 94.21% (near-infrared region). These optical and electrical characteristics of IWO films make them suitable for a-Si/C-Si heterojunction solar cell applications.

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

The Miracle of Microfilm: The Foundation of the Largest Genealogical Record Collection in the World.

ERIC Educational Resources Information Center

Powell, Ted F.

1985-01-01

Traces origins of the Genealogical Department of The Church of Jesus Christ of Latter-Day Saints (Mormon), highlighting microfilm technology, equipment used, development of the 16mm camera, film processing, quality control, filming techniques, specialized microfilming, archival storage (The Granite Mountain Records Vault), the genealogical library…

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Eu-doped BaTiO₃powder and film from sol-gel process with polyvinylpyrrolidone additive.

PubMed

García-Hernández, Margarita; García-Murillo, Antonieta; de J Carrillo-Romo, Felipe; Jaramillo-Vigueras, David; Chadeyron, Geneviève; De la Rosa, Elder; Boyer, Damien

2009-09-17

Transparent BaTiO(3):Eu(3+) films were prepared via a sol-gel method and dip-coating technique, using barium acetate, titanium butoxide, and polyvinylpyrrolidone (PVP) as modifier viscosity. BaTiO(3):Eu(3+) films ~500 nm thick, crystallized after thermal treatment at 700 masculineC. The powders revealed spherical and rod shape morphology. The optical quality of films showed a predominant band at 615 nm under 250 nm excitation. A preliminary luminescent test provided the properties of the Eu(3+) doped BaTiO(3).

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

The Evaluation of Effect of Developer Age in the Detection of Approximal Caries Using Three Speed Dental X-Ray Films: An In-Vitro Study

PubMed Central

Madalli, Vijaylaxmi B; Annigeri, Rajeshwari G; Basavaraddi, Shrinivas M

2014-01-01

Background and Objectives: Ever since the first radiograph was taken in 1895, radiographs have become an essential part of dental practice. Since radiation exposure for the patients is a major concern, it is important for us to reduce the radiation exposure to the patient and surrounding environment, without compromising the quality of image. Since improper film processing is one of the major causes of poor image quality, it is very important to test dental films under a variety of processing conditions. So this study was conducted to compare the diagnostic accuracy between Kodak Ultraspeed, Ektaspeed and Agfa Dentus M2 Comfort films for the detection of approximal caries in fresh as well as in aged processing solution. Methods: Hundred extracted unrestored maxillary and mandibular teeth were aligned in a group of five teeth in each plaster model. Total of 20 plaster models were constructed and only 3 teeth in the middle were utilized for the study. The final sample consisted of 60 teeth in the study. The exposure time for Ultraspeed film was standardized at 0.5 seconds and for Ektaspeed and Agfa Dentus M2 films, the exposure time was 0.32 seconds. For each radiograph two blocks were used simulating bitewing radiograph. All 20 plaster blocks were exposed using three film types at standardized exposure timings with 30 radiographs each week. The procedure was repeated every week until 6 weeks. Radiographs were evaluated by an observer and assessed by following four point scale 0- sound tooth, 1- lesion in enamel, 2- lesion in amelodentinal junction, 3- dentinal lesion. Only distal surfaces were assessed. Thereafter all the teeth were subjected for histological study and actual depth of the lesion was recorded which acted as gold standard and this reading was subtracted in observer readings after radiographic examination. All data collected were analyzed statistically using ANOVA, paired and unpaired t-tests. Results: Ektaspeed and Agfa films required less exposure compared to Ultraspeed film. With respect to film, all films had equal diagnostic accuracy upto three weeks. From fourth week Ultraspeed and Agfa films were considerably better than E speed film. E speed film was inferior in the depleted solution compared to other two solutions. With respect to lesion detection Agfa film was inferior to other two films. Conclusion: All three films had equal diagnostic accuracy in fresh solution. Considering the significant reduction in patient radiation with Ektaspeed film, this should be the film of choice whenever possible. As far as the diagnosis of approximal caries is concerned processing solutions should not be used longer than 3 weeks. PMID:24783146

The evaluation of effect of developer age in the detection of approximal caries using three speed dental x-ray films: an in-vitro study.

PubMed

Madalli, Vijaylaxmi B; Annigeri, Rajeshwari G; Basavaraddi, Shrinivas M

2014-03-01

Ever since the first radiograph was taken in 1895, radiographs have become an essential part of dental practice. Since radiation exposure for the patients is a major concern, it is important for us to reduce the radiation exposure to the patient and surrounding environment, without compromising the quality of image. Since improper film processing is one of the major causes of poor image quality, it is very important to test dental films under a variety of processing conditions. So this study was conducted to compare the diagnostic accuracy between Kodak Ultraspeed, Ektaspeed and Agfa Dentus M2 Comfort films for the detection of approximal caries in fresh as well as in aged processing solution. Hundred extracted unrestored maxillary and mandibular teeth were aligned in a group of five teeth in each plaster model. Total of 20 plaster models were constructed and only 3 teeth in the middle were utilized for the study. The final sample consisted of 60 teeth in the study. The exposure time for Ultraspeed film was standardized at 0.5 seconds and for Ektaspeed and Agfa Dentus M2 films, the exposure time was 0.32 seconds. For each radiograph two blocks were used simulating bitewing radiograph. All 20 plaster blocks were exposed using three film types at standardized exposure timings with 30 radiographs each week. The procedure was repeated every week until 6 weeks. Radiographs were evaluated by an observer and assessed by following four point scale 0- sound tooth, 1- lesion in enamel, 2- lesion in amelodentinal junction, 3- dentinal lesion. Only distal surfaces were assessed. Thereafter all the teeth were subjected for histological study and actual depth of the lesion was recorded which acted as gold standard and this reading was subtracted in observer readings after radiographic examination. All data collected were analyzed statistically using ANOVA, paired and unpaired t-tests. Ektaspeed and Agfa films required less exposure compared to Ultraspeed film. With respect to film, all films had equal diagnostic accuracy upto three weeks. From fourth week Ultraspeed and Agfa films were considerably better than E speed film. E speed film was inferior in the depleted solution compared to other two solutions. With respect to lesion detection Agfa film was inferior to other two films. All three films had equal diagnostic accuracy in fresh solution. Considering the significant reduction in patient radiation with Ektaspeed film, this should be the film of choice whenever possible. As far as the diagnosis of approximal caries is concerned processing solutions should not be used longer than 3 weeks.

Silver Nanowire Transparent Conductive Films with High Uniformity Fabricated via a Dynamic Heating Method.

PubMed

Jia, Yonggao; Chen, Chao; Jia, Dan; Li, Shuxin; Ji, Shulin; Ye, Changhui

2016-04-20

The uniformity of the sheet resistance of transparent conductive films is one of the most important quality factors for touch panel applications. However, the uniformity of silver nanowire transparent conductive films is far inferior to that of indium-doped tin oxide (ITO). Herein, we report a dynamic heating method using infrared light to achieve silver nanowire transparent conductive films with high uniformity. This method can overcome the coffee ring effect during the drying process and suppress the aggregation of silver nanowires in the film. A nonuniformity factor of the sheet resistance of the as-prepared silver nanowire transparent conductive films could be as low as 6.7% at an average sheet resistance of 35 Ω/sq and a light transmittance of 95% (at 550 nm), comparable to that of high-quality ITO film in the market. In addition, a mechanical study shows that the sheet resistance of the films has little change after 5000 bending cycles, and the film could be used in touch panels for human-machine interactive input. The highly uniform and mechanically stable silver nanowire transparent conductive films meet the requirement for many significant applications and could play a key role in the display market in a near future.

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

PubMed

Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

2015-07-01

A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

NASA Technical Reports Server (NTRS)

Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

2011-01-01

Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

NASA Technical Reports Server (NTRS)

Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

2016-01-01

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

Shelf-life extension of fresh-cut iceberg lettuce (Lactuca sativa L) by different antimicrobial films.

PubMed

Kang, Sun-Chul; Kim, Min-Jeong; Choi, Ung-Kyu

2007-08-01

This study was conducted to investigate the antibacterial activity and shelf-life extension effect of iceberg lettuce packed in BN/PE film. The BN/PE film has a strong microbial suppression effect on pathogenic bacteria such as Escherichia coli, Salmonella enteritidis, and S. typhimurium. The number of psychrophiles and mesophiles during 5 days of cold storage of fresh-cut iceberg lettuce at 10 degrees C packaged in BN/PE film was strictly suppressed in comparison with other tested films (OPP, PE, and PET film). When fresh processed iceberg lettuce was processed and stored under the current conditions, the shelf-life of the product was longer than 5 days in the BN/PE film package, whereas the shelf-life when using the other films tested, PE, OPP and PET, was no longer than 3-4 days. The decay rates of the iceberg lettuce packed in the BN/PE film was maintained at 29.8 +/- 2.1% on the 5th day of preservation. The samples packed in BN/PE film maintained an excellent visual quality during the 3 days of storage without significant differences in comparison with the initial visual quality. No browning was observed in the samples packed in BN/PE film for up to 3 days. The texture of shredded iceberg lettuce packaged in BN/PE film remained unchanged up to 3 days, and then a moderate decrease in texture was observed after 4 days of storage. In addition, the overall acceptability of fresh-cut iceberg lettuce packaged in BN/PE film did not change for up to 3 days, whereas the samples packaged in the other films were inedible by 3 days of storage. In conclusion, the shelf-life of fresh-cut iceberg lettuce packaged in the BN/PE film was extended to more than 5 days at 10 degres C, whereas that in the other films was 2 days at 10 degrees C. Therefore, the shelf-life extension effect of the fresh-cut iceberg lettuce in BN/PE film packaging was very effective compared with the other films tested.

How Many Pixels Does It Take to Make a Good 4"×6" Print? Pixel Count Wars Revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

Digital still cameras emerged following the introduction of the Sony Mavica analog prototype camera in 1981. These early cameras produced poor image quality and did not challenge film cameras for overall quality. By 1995 digital still cameras in expensive SLR formats had 6 mega-pixels and produced high quality images (with significant image processing). In 2005 significant improvement in image quality was apparent and lower prices for digital still cameras (DSCs) started a rapid decline in film usage and film camera sells. By 2010 film usage was mostly limited to professionals and the motion picture industry. The rise of DSCs was marked by a “pixel war” where the driving feature of the cameras was the pixel count where even moderate cost, ˜120, DSCs would have 14 mega-pixels. The improvement of CMOS technology pushed this trend of lower prices and higher pixel counts. Only the single lens reflex cameras had large sensors and large pixels. The drive for smaller pixels hurt the quality aspects of the final image (sharpness, noise, speed, and exposure latitude). Only today are camera manufactures starting to reverse their course and producing DSCs with larger sensors and pixels. This paper will explore why larger pixels and sensors are key to the future of DSCs.

Liquid-Phase Processing of Barium Titanate Thin Films

NASA Astrophysics Data System (ADS)

Harris, David Thomas

Processing of thin films introduces strict limits on the thermal budget due to substrate stability and thermal expansion mismatch stresses. Barium titanate serves as a model system for the difficulty in producing high quality thin films because of sensitivity to stress, scale, and crystal quality. Thermal budget restriction leads to reduced crystal quality, density, and grain growth, depressing ferroelectric and nonlinear dielectric properties. Processing of barium titanate is typically performed at temperatures hundreds of degrees above compatibility with metalized substrates. In particular integration with silicon and other low thermal expansion substrates is desirable for reductions in costs and wider availability of technologies. In bulk metal and ceramic systems, sintering behavior has been encouraged by the addition of a liquid forming second phase, improving kinetics and promoting densification and grain growth at lower temperatures. This approach is also widespread in the multilayer ceramic capacitor industry. However only limited exploration of flux processing with refractory thin films has been performed despite offering improved dielectric properties for barium titanate films at lower temperatures. This dissertation explores physical vapor deposition of barium titanate thin films with addition of liquid forming fluxes. Flux systems studied include BaO-B2O3, Bi2O3-BaB2O 4, BaO-V2O5, CuO-BaO-B2O3, and BaO-B2O3 modified by Al, Si, V, and Li. Additions of BaO-B2O3 leads to densification and an increase in average grain size from 50 nm to over 300 nm after annealing at 900 °C. The ability to tune permittivity of the material improved from 20% to 70%. Development of high quality films enables engineering of ferroelectric phase stability using residual thermal expansion mismatch in polycrystalline films. The observed shifts to TC match thermodynamic calculations, expected strain from the thermal expansion coefficients, as well as x-ray diffract measurements . Our system exhibits flux-film-substrate interactions that can lead to dramatic changes to the microstructure. This effect is especially pronounced onc -sapphire, with Al diffusion from the substrate leading to formation of an epitaxial BaAl2O4 second phase at the substrate-film interface. The formation of this second phase in the presence of a liquid phase seeds {111} twins that drive abnormal grain growth. The orientation of the sapphire substrate determines the BaAl2O 4 morphology, enabling control the abnormal grain growth behavior. CuO additions leads to significant grain growth at 900 °C, with average grain size approaching 500 nm. The orthorhombic-tetragonal phase transition is clearly observable in temperature dependent measurements and both linear and nonlinear dielectric properties are improved. All films containing CuO are susceptible to aging. A number of other systems were investigated for efficacy at temperatures below 900 °C. Pulsed laser deposition was used to study flux + BaTiO 3 targets, layered flux films, and in situ liquids. RF-magnetron sputtering using a dual-gun approach was used to explore integration on flexible foils with Ba1-xSrxTiO3. Many of these systems were based on the BaO-B2O3 system, which has proven effective in thin films, multilayer ceramic capacitors, and bulk ceramics. Modifiers allow tailoring of the microstructure at 900 °C, however no compositions were found, and no reports exist in the open literature, that provide significant grain growth or densification below 900 °C. Liquid phase fluxes offer a promising path forward for low temperature processing of barium titanate, with the ultimate goal of integration with metalized silicon substrates. This work demonstrates significant improvements to dielectric properties and the necessity of understanding interactions in the film-flux-substrate system.

Low-Temperature Solution Processable Electrodes for Piezoelectric Sensors Applications

NASA Astrophysics Data System (ADS)

Tuukkanen, Sampo; Julin, Tuomas; Rantanen, Ville; Zakrzewski, Mari; Moilanen, Pasi; Lupo, Donald

2013-05-01

Piezoelectric thin-film sensors are suitable for a wide range of applications from physiological measurements to industrial monitoring systems. The use of flexible materials in combination with high-throughput printing technologies enables cost-effective manufacturing of custom-designed, highly integratable piezoelectric sensors. This type of sensor can, for instance, improve industrial process control or enable the embedding of ubiquitous sensors in our living environment to improve quality of life. Here, we discuss the benefits, challenges and potential applications of piezoelectric thin-film sensors. The piezoelectric sensor elements are fabricated by printing electrodes on both sides of unmetallized poly(vinylidene fluoride) film. We show that materials which are solution processable in low temperatures, biocompatible and environmental friendly are suitable for use as electrode materials in piezoelectric sensors.

Effect of poor control of film processors on mammographic image quality.

PubMed

Kimme-Smith, C; Sun, H; Bassett, L W; Gold, R H

1992-11-01

With the increasingly stringent standards of image quality in mammography, film processor quality control is especially important. Current methods are not sufficient for ensuring good processing. The authors used a sensitometer and densitometer system to evaluate the performance of 22 processors at 16 mammographic facilities. Standard sensitometric values of two films were established, and processor performance was assessed for variations from these standards. Developer chemistry of each processor was analyzed and correlated with its sensitometric values. Ten processors were retested, and nine were found to be out of calibration. The developer components of hydroquinone, sulfites, bromide, and alkalinity varied the most, and low concentrations of hydroquinone were associated with lower average gradients at two facilities. Use of the sensitometer and densitometer system helps identify out-of-calibration processors, but further study is needed to correlate sensitometric values with developer component values. The authors believe that present quality control would be improved if sensitometric or other tests could be used to identify developer components that are out of calibration.

Quality by design approach for optimizing the formulation and physical properties of extemporaneously prepared orodispersible films.

PubMed

Visser, J Carolina; Dohmen, Willem M C; Hinrichs, Wouter L J; Breitkreutz, Jörg; Frijlink, Henderik W; Woerdenbag, Herman J

2015-05-15

The quality by design (QbD) approach was applied for optimizing the formulation of extemporaneously prepared orodispersible films (ODFs) using Design-Expert® Software. The starting formulation was based on earlier experiments and contained the film forming agents hypromellose and carbomer 974P and the plasticizer glycerol (Visser et al., 2015). Trometamol and disodium EDTA were added to stabilize the solution. To optimize this formulation a quality target product profile was established in which critical quality attributes (CQAs) such as mechanical properties and disintegration time were defined and quantified. As critical process parameters (CPP) that were evaluated for their effect on the CQAs the percentage of hypromellose and the percentage of glycerol as well as the drying time were chosen. Response surface methodology (RMS) was used to evaluate the effects of the CPPs on the CQAs of the final product. The main factor affecting tensile strength and Young's modulus was the percentage of glycerol. Elongation at break was mainly influenced by the drying temperature. Disintegration time was found to be sensitive to the percentage of hypromellose. From the results a design space could be created. As long as the formulation and process variables remain within this design space, a product is obtained with desired characteristics and that meets all set quality requirements. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Predicting the optimal process window for the coating of single-crystalline organic films with mobilities exceeding 7 cm2/Vs.

NASA Astrophysics Data System (ADS)

Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2016-09-01

Organic thin film transistors (OTFTs) based on single crystalline thin films of organic semiconductors have seen considerable development in the recent years. The most successful method for the fabrication of single crystalline films are solution-based meniscus guided coating techniques such as dip-coating, solution shearing or zone casting. These upscalable methods enable rapid and efficient film formation without additional processing steps. The single-crystalline film quality is strongly dependent on solvent choice, substrate temperature and coating speed. So far, however, process optimization has been conducted by trial and error methods, involving, for example, the variation of coating speeds over several orders of magnitude. Through a systematic study of solvent phase change dynamics in the meniscus region, we develop a theoretical framework that links the optimal coating speed to the solvent choice and the substrate temperature. In this way, we can accurately predict an optimal processing window, enabling fast process optimization. Our approach is verified through systematic OTFT fabrication based on films grown with different semiconductors, solvents and substrate temperatures. The use of best predicted coating speeds delivers state of the art devices. In the case of C8BTBT, OTFTs show well-behaved characteristics with mobilities up to 7 cm2/Vs and onset voltages close to 0 V. Our approach also explains well optimal recipes published in the literature. This route considerably accelerates parameter screening for all meniscus guided coating techniques and unveils the physics of single crystalline film formation.

Plan delivery quality assurance for CyberKnife: Statistical process control analysis of 350 film-based patient-specific QAs.

PubMed

Bellec, J; Delaby, N; Jouyaux, F; Perdrieux, M; Bouvier, J; Sorel, S; Henry, O; Lafond, C

2017-07-01

Robotic radiosurgery requires plan delivery quality assurance (DQA) but there has never been a published comprehensive analysis of a patient-specific DQA process in a clinic. We proposed to evaluate 350 consecutive film-based patient-specific DQAs using statistical process control. We evaluated the performance of the process to propose achievable tolerance criteria for DQA validation and we sought to identify suboptimal DQA using control charts. DQAs were performed on a CyberKnife-M6 using Gafchromic-EBT3 films. The signal-to-dose conversion was performed using a multichannel-correction and a scanning protocol that combined measurement and calibration in a single scan. The DQA analysis comprised a gamma-index analysis at 3%/1.5mm and a separate evaluation of spatial and dosimetric accuracy of the plan delivery. Each parameter was plotted on a control chart and control limits were calculated. A capability index (Cpm) was calculated to evaluate the ability of the process to produce results within specifications. The analysis of capability showed that a gamma pass rate of 85% at 3%/1.5mm was highly achievable as acceptance criteria for DQA validation using a film-based protocol (Cpm>1.33). 3.4% of DQA were outside a control limit of 88% for gamma pass-rate. The analysis of the out-of-control DQA helped identify a dosimetric error in our institute for a specific treatment type. We have defined initial tolerance criteria for DQA validations. We have shown that the implementation of a film-based patient-specific DQA protocol with the use of control charts is an effective method to improve patient treatment safety on CyberKnife. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Illuminating the Potential of Thin-Film Photovoltaics

NASA Astrophysics Data System (ADS)

Katahara, John K.

Widespread adoption of photovoltaics (PV) as an alternative electricity source will be predicated upon improvements in price performance compared to traditional power sources. Solution processing of thin-film PV is one promising way to reduce the capital expenditure (CAPEX) of manufacturing solar cells. However, it is imperative that a shift to solution processing does not come at the expense of device performance. One particularly problematic parameter for thin-film PV has historically been the open-circuit voltage (VOC ). As such, there is a pressing need for characterization tools that allow us to quickly and accurately evaluate the potential performance of solution-processed PV absorber layers. This work describes recent progress in developing photoluminescence (PL) techniques for probing optoelectronic quality in semiconductors. We present a generalized model of absorption that encompasses ideal direct-gap semiconductor absorption and various band tail models. This powerful absorption model is used to fit absolute intensity PL data and extract quasi-Fermi level splitting (maximum attainable VOC) for a variety of PV absorber technologies. This technique obviates the need for full device fabrication to get feedback on optoelectronic quality of PV absorber layers and has expedited materials exploration. We then use this absorption model to evaluate the thermodynamic losses due to different band tail cases and estimate tail losses in Cu 2ZnSn(S,Se)4 (CZTSSe). The effect of sub-bandgap absorption on PL quantum yield (PLQY) and voltage is elucidated, and new analysis techniques for extracting VOC from PLQY are validated that reduce computation time and provide us even faster feedback on material quality. We then use PL imaging to develop a mechanism describing the degradation of solution-processed CH3NH3PbI3 films under applied bias and illumination.

Film grain noise modeling in advanced video coding

NASA Astrophysics Data System (ADS)

Oh, Byung Tae; Kuo, C.-C. Jay; Sun, Shijun; Lei, Shawmin

2007-01-01

A new technique for film grain noise extraction, modeling and synthesis is proposed and applied to the coding of high definition video in this work. The film grain noise is viewed as a part of artistic presentation by people in the movie industry. On one hand, since the film grain noise can boost the natural appearance of pictures in high definition video, it should be preserved in high-fidelity video processing systems. On the other hand, video coding with film grain noise is expensive. It is desirable to extract film grain noise from the input video as a pre-processing step at the encoder and re-synthesize the film grain noise and add it back to the decoded video as a post-processing step at the decoder. Under this framework, the coding gain of the denoised video is higher while the quality of the final reconstructed video can still be well preserved. Following this idea, we present a method to remove film grain noise from image/video without distorting its original content. Besides, we describe a parametric model containing a small set of parameters to represent the extracted film grain noise. The proposed model generates the film grain noise that is close to the real one in terms of power spectral density and cross-channel spectral correlation. Experimental results are shown to demonstrate the efficiency of the proposed scheme.

Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

NASA Astrophysics Data System (ADS)

Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

2017-08-01

Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

Self-Functionalization Behind a Solution-Processed NiOx Film Used As Hole Transporting Layer for Efficient Perovskite Solar Cells.

PubMed

Ciro, John; Ramírez, Daniel; Mejía Escobar, Mario Alejandro; Montoya, Juan Felipe; Mesa, Santiago; Betancur, Rafael; Jaramillo, Franklin

2017-04-12

Fabrication of solution-processed perovskite solar cells (PSCs) requires the deposition of high quality films from precursor inks. Frequently, buffer layers of PSCs are formed from dispersions of metal oxide nanoparticles (NPs). Therefore, the development of trustable methods for the preparation of stable colloidal NPs dispersions is crucial. In this work, a novel approach to form very compact semiconducting buffer layers with suitable optoelectronic properties is presented through a self-functionalization process of the nanocrystalline particles by their own amorphous phase and without adding any other inorganic or organic functionalization component or surfactant. Such interconnecting amorphous phase composed by residual nitrate, hydroxide, and sodium ions, proved to be fundamental to reach stable colloidal dispersions and contribute to assemble the separate crystalline nickel oxide NPs in the final film, resulting in a very homogeneous and compact layer. A proposed mechanism behind the great stabilization of the nanoparticles is exposed. At the end, the self-functionalized nickel oxide layer exhibited high optoelectronic properties enabling perovskite p-i-n solar cells as efficient as 16.6% demonstrating the pertinence of the presented strategy to obtain high quality buffer layers processed in solution at room temperature.

Facile fabrication of large-grain CH 3NH 3PbI 3-xBr x films for high-efficiency solar cells via CH 3NH 3Br-selective Ostwald ripening

DOE PAGES

Yang, Mengjin; Zhang, Taiyang; Schulz, Philip; ...

2016-08-01

Organometallic halide perovskite solar cells (PSCs) have shown great promise as a low-cost, high-efficiency photovoltaic technology. Structural and electro-optical properties of the perovskite absorber layer are most critical to device operation characteristics. Here we present a facile fabrication of high-efficiency PSCs based on compact, large-grain, pinhole-free CH 3NH 3PbI 3-xBr x (MAPbI 3-xBr x) thin films with high reproducibility. A simple methylammonium bromide (MABr) treatment via spin-coating with a proper MABr concentration converts MAPbI 3 thin films with different initial film qualities (for example, grain size and pinholes) to high-quality MAPbI 3-xBr x thin films following an Ostwald ripening process,more » which is strongly affected by MABr concentration and is ineffective when replacing MABr with methylammonium iodide. A higher MABr concentration enhances I-Br anion exchange reaction, yielding poorer device performance. Lastly, this MABr-selective Ostwald ripening process improves cell efficiency but also enhances device stability and thus represents a simple, promising strategy for further improving PSC performance with higher reproducibility and reliability.« less

Optimization of the deposition conditions and structural characterization of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chrzanowski, J.; Meng-Burany, S.; Xing, W.B.

1994-12-31

Two series of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub z} thin films deposited on (001) LaAlO{sub 3} single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O{sub 2}) and substrate temperature of the deposition process T{sub h}, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j{sub c} and T{sub c} exhibited T{sub c}{ge}91 K and j{sub c}{ge}4 x 10{sup 6} A/cm{sup 2}, at 77 K. Close correlations between the structural quality ofmore » the film, the growth parameters (p(O{sub 2}), T{sub h}) and j{sub c} and T{sub c} have been found.« less

An optimized one-step wet etching process of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical system applications

NASA Astrophysics Data System (ADS)

Che, L.; Halvorsen, E.; Chen, X.

2011-10-01

The existence of insoluble residues as intermediate products produced during the wet etching process is the main quality-reducing and structure-patterning issue for lead zirconate titanate (PZT) thin films. A one-step wet etching process using the solutions of buffered HF (BHF) and HNO3 acid was developed for patterning PZT thin films for microelectomechanical system (MEMS) applications. PZT thin films with 1 µm thickness were prepared on the Pt/Ti/SiO2/Si substrate by the sol-gel process for compatibility with Si micromachining. Various compositions of the etchant were investigated and the patterns were examined to optimize the etching process. The optimal result is demonstrated by a high etch rate (3.3 µm min-1) and low undercutting (1.1: 1). The patterned PZT thin film exhibits a remnant polarization of 24 µC cm-2, a coercive field of 53 kV cm-1, a leakage current density of 4.7 × 10-8 A cm-2 at 320 kV cm-1 and a dielectric constant of 1100 at 1 KHz.

Implementation of quality by design approach in manufacturing process optimization of dry granulated, immediate release, coated tablets - a case study.

PubMed

Teżyk, Michał; Jakubowska, Emilia; Milanowski, Bartłomiej; Lulek, Janina

2017-10-01

The aim of this study was to optimize the process of tablets compression and identification of film-coating critical process parameters (CPPs) affecting critical quality attributes (CQAs) using quality by design (QbD) approach. Design of experiment (DOE) and regression methods were employed to investigate hardness, disintegration time, and thickness of uncoated tablets depending on slugging and tableting compression force (CPPs). Plackett-Burman experimental design was applied to identify critical coating process parameters among selected ones that is: drying and preheating time, atomization air pressure, spray rate, air volume, inlet air temperature, and drum pressure that may influence the hardness and disintegration time of coated tablets. As a result of the research, design space was established to facilitate an in-depth understanding of existing relationship between CPPs and CQAs of intermediate product (uncoated tablets). Screening revealed that spray rate and inlet air temperature are two most important factors that affect the hardness of coated tablets. Simultaneously, none of the tested coating factors have influence on disintegration time. The observation was confirmed by conducting film coating of pilot size batches.

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

DOE PAGES

Wang, Siming; Antonakos, C.; Bordel, C.; ...

2016-11-07

Here, a fabrication process has been developed for high energy ion beam assisted deposition (IBAD) biaxial texturing of ultrathin (~1 nm) MgO films, using a high ion-to-atom ratio and post-deposition annealing instead of a homoepitaxial MgO layer. These films serve as the seed layer for epitaxial growth of materials on amorphous substrates such as electron/X-ray transparent membranes or nanocalorimetry devices. Stress measurements and atomic force microscopy of the MgO films reveal decreased stress and surface roughness, while X-ray diffraction of epitaxial overlayers demonstrates the improved crystal quality of films grown epitaxially on IBAD MgO. The process simplifies the synthesis ofmore » IBAD MgO, fundamentally solves the “wrinkle” issue induced by the homoepitaxial layer on sub-50 nm membranes, and enables studies of epitaxial materials in electron/X-ray transmission and nanocalorimetry.« less

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Synthesis and Application of Ferroelectric Poly(Vinylidene Fluoride-co-Trifluoroethylene) Films using Electrophoretic Deposition

PubMed Central

Ryu, Jeongjae; No, Kwangsoo; Kim, Yeontae; Park, Eugene; Hong, Seungbum

2016-01-01

In this study, we investigated the deposition kinetics of polyvinylidene fluoride copolymerized with trifluoroethylene (P(VDF-TrFE)) particles on stainless steel substrates during the electrophoretic deposition (EPD) process. The effect of applied voltage and deposition time on the structure and ferroelectric property of the P(VDF-TrFE) films was studied in detail. A method of repeated EPD and heat treatment above melting point were employed to fabricate crack-free P(VDF-TrFE) thick films. This method enabled us to fabricate P(VDF-TrFE) films with variable thicknesses. The morphology of the obtained films was investigated by scanning electron microscopy (SEM), and the formation of β-phase was confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. P(VDF-TrFE) films prepared with various thicknesses showed remnant polarization (Pr) of around 4 μC/cm2. To demonstrate the applicability of our processing recipe to complex structures, we fabricated a spring-type energy harvester by depositing P(VDF-TrFE) films on stainless steel springs using EPD process. Our preliminary results show that an electrophoretic deposition can be applied to produce high-quality P(VDF-TrFE) films on planar as well as three-dimensional (3-D) substrates. PMID:27805008

Synthesis and application of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) films using electrophoretic deposition

DOE PAGES

Ryu, Jeongjae; No, Kwangsoo; Kim, Yeontae; ...

2016-11-02

In this paper, we investigated the deposition kinetics of polyvinylidene fluoride copolymerized with trifluoroethylene (P(VDF-TrFE)) particles on stainless steel substrates during the electrophoretic deposition (EPD) process. The effect of applied voltage and deposition time on the structure and ferroelectric property of the P(VDF-TrFE) films was studied in detail. A method of repeated EPD and heat treatment above melting point were employed to fabricate crack-free P(VDF-TrFE) thick films. This method enabled us to fabricate P(VDF-TrFE) films with variable thicknesses. The morphology of the obtained films was investigated by scanning electron microscopy (SEM), and the formation of β-phase was confirmed by X-raymore » diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. P(VDF-TrFE) films prepared with various thicknesses showed remnant polarization (P r) of around 4 μC/cm 2. To demonstrate the applicability of our processing recipe to complex structures, we fabricated a spring-type energy harvester by depositing P(VDF-TrFE) films on stainless steel springs using EPD process. Our preliminary results show that an electrophoretic deposition can be applied to produce high-quality P(VDF-TrFE) films on planar as well as three-dimensional (3-D) substrates.« less

Applicability of near-infrared spectroscopy in the monitoring of film coating and curing process of the prolonged release coated pellets.

PubMed

Korasa, Klemen; Hudovornik, Grega; Vrečer, Franc

2016-10-10

Although process analytical technology (PAT) guidance has been introduced to the pharmaceutical industry just a decade ago, this innovative approach has already become an important part of efficient pharmaceutical development, manufacturing, and quality assurance. PAT tools are especially important in technologically complex operations which require strict control of critical process parameters and have significant effect on final product quality. Manufacturing of prolonged release film coated pellets is definitely one of such processes. The aim of the present work was to study the applicability of the at-line near-infrared spectroscopy (NIR) approach in the monitoring of pellet film coating and curing steps. Film coated pellets were manufactured by coating the active ingredient containing pellets with film coating based on polymethacrylate polymers (Eudragit® RS/RL). The NIR proved as a useful tool for the monitoring of the curing process since it was able to determine the extent of the curing and hence predict drug release rate by using partial least square (PLS) model. However, such approach also showed a number of limitations, such as low reliability and high susceptibility to pellet moisture content, and was thus not able to predict drug release from pellets with high moisture content. On the other hand, the at-line NIR was capable to predict the thickness of Eudragit® RS/RL film coating in a wide range (up to 40μm) with good accuracy even in the pellets with high moisture content. To sum up, high applicability of the at-line NIR in the monitoring of the prolonged release pellets production was demonstrated in the present study. The present findings may contribute to more efficient and reliable PAT solutions in the manufacturing of prolonged release dosage forms. Copyright © 2016 Elsevier B.V. All rights reserved.

Automatic recognition of light source from color negative films using sorting classification techniques

NASA Astrophysics Data System (ADS)

Sanger, Demas S.; Haneishi, Hideaki; Miyake, Yoichi

1995-08-01

This paper proposed a simple and automatic method for recognizing the light sources from various color negative film brands by means of digital image processing. First, we stretched the image obtained from a negative based on the standardized scaling factors, then extracted the dominant color component among red, green, and blue components of the stretched image. The dominant color component became the discriminator for the recognition. The experimental results verified that any one of the three techniques could recognize the light source from negatives of any film brands and all brands greater than 93.2 and 96.6% correct recognitions, respectively. This method is significant for the automation of color quality control in color reproduction from color negative film in mass processing and printing machine.

Deposition of zinc sulfide thin films by chemical bath process

NASA Astrophysics Data System (ADS)

Oladeji, Isaiah O.; Chow, Lee

1996-11-01

Deposition of high quality zinc sulfide (ZnS) thin film over a large area is required if it is to be effectively used in electroluminescent devices, solar cells, and other optoelectronic devices. Of all deposition techniques, chemical bath deposition (CBD) is the least costly technique that meets the above requirements. Recently it is found that the growth of ZnS film, of thickness less than 100 nm in a single dip, by CBD is facilitated by the use of ammonia and hydrazine as complexing agents. Here we report that the thickness of the deposited ZnS film can be increased if ammonium salt is used as a buffer. We also present an analytical study to explain our results and to further understand the ZnS growth process in CBD.

Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process

NASA Astrophysics Data System (ADS)

Zhao, Qingxun; Shang, Yong; Dong, Lifang; Fu, Guangsheng; Yan, Zheng; Yang, Jingfa

2002-09-01

In this paper, the experimental synthesis of diamond films and optical emission spectroscopy (OES) of the gaseous phase species are studied in the range of substrate temperature from Ts = 300°C to 850°C. The high quality sub-microcrystalline diamond films are successfully deposited at substrate temperature (330 ≍ 340)°C by adopting glow plasma assisted hot filament chemical vapor deposition (GPCVD). For the first time, in situ OES is applied to diagnose weak signal of GPCVD system when CH4 and H2 are used as the input gas, and the reactive species are identified in diamond growth processes. A primary model of diamond films growing at low temperature is presented by studying dynamic behavior for nonequilibrium plasma reactions.

Photonic devices on planar and curved substrates and methods for fabrication thereof

DOEpatents

Bartl, Michael H.; Barhoum, Moussa; Riassetto, David

2016-08-02

A versatile and rapid sol-gel technique for the fabrication of high quality one-dimensional photonic bandgap materials. For example, silica/titania multi-layer materials may be fabricated by a sol-gel chemistry route combined with dip-coating onto planar or curved substrate. A shock-cooling step immediately following the thin film heat-treatment process is introduced. This step was found important in the prevention of film crack formation--especially in silica/titania alternating stack materials with a high number of layers. The versatility of this sol-gel method is demonstrated by the fabrication of various Bragg stack-type materials with fine-tuned optical properties by tailoring the number and sequence of alternating layers, the film thickness and the effective refractive index of the deposited thin films. Measured optical properties show good agreement with theoretical simulations confirming the high quality of these sol-gel fabricated optical materials.

Films, Preimpregnated Tapes and Composites Made from Polyimide "Salt-Like" Solutions

NASA Technical Reports Server (NTRS)

Cano, Roberto J. (Inventor); Weiser, Erik S. (Inventor); St.Clair, Terry L. (Inventor); Echigo, Yoshiaki (Inventor); Kaneshiro, Hisayasu (Inventor)

2001-01-01

High quality films, preimpregnated tape (prepegs), and composites have been fabricated from polyimide precursor 'saltlike' solutions. These salt-like solutions have a low viscosity (5,000 to 10,000 cp) and a high solids content (50-65% by weight) and can be coated onto reinforcing fiber to produce prepegs with excellent tack and drape at 12-15% residual solvent (approximately 4-6% water from thermal imidization reaction). The processing of these types of prepegs significantly overcomes solvent removal problems and allows excellent fiber wet out. In addition, the physical characteristics of the polyimide precursor salt-like solutions permits processing into high-performance materials through the use of standard prepregging and composite fabrication equipment. The resultant composites are of high quality.

Eu-Doped BaTiO3 Powder and Film from Sol-Gel Process with Polyvinylpyrrolidone Additive

PubMed Central

García-Hernández, Margarita; García-Murillo, Antonieta; de J. Carrillo-Romo, Felipe; Jaramillo-Vigueras, David; Chadeyron, Geneviève; De la Rosa, Elder; Boyer, Damien

2009-01-01

Transparent BaTiO3:Eu3+ films were prepared via a sol-gel method and dip-coating technique, using barium acetate, titanium butoxide, and polyvinylpyrrolidone (PVP) as modifier viscosity. BaTiO3:Eu3+ films ~500 nm thick, crystallized after thermal treatment at 700 ºC. The powders revealed spherical and rod shape morphology. The optical quality of films showed a predominant band at 615 nm under 250 nm excitation. A preliminary luminescent test provided the properties of the Eu3+ doped BaTiO3. PMID:19865533

Electrical and photovoltaic properties of residue-free MoS2 thin films by liquid exfoliation method

NASA Astrophysics Data System (ADS)

Kyo Lee, Seung; Chu, Dongil; Song, Da Ye; Pak, Sang Woo; Kim, Eun Kyu

2017-05-01

Molybdenum disulfide (MoS2) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS2 thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS2 film thickness could be controlled by centrifuge condition in the range of 20 ˜ 40 nm, and its carrier concentration and mobility were measured at about 7.36 × 1016 cm-3 and 4.67 cm2 V-1 s-1, respectively. Detailed analysis on the films was done by atomic force microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy measurements for verifying the film quality. For application of the photovoltaic device, a Au/MoS2/silicon/In junction structure was fabricated, which then showed power conversion efficiency of 1.01% under illumination of 100 mW cm-2.

Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films.

PubMed

Mattinen, Miika; King, Peter J; Khriachtchev, Leonid; Meinander, Kristoffer; Gibbon, James T; Dhanak, Vin R; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

2018-04-19

Semiconducting 2D materials, such as SnS 2 , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS 2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS 2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS 2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS 2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

PubMed

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

Photodeposition of amorphous polydiacetylene films from monomer solutions onto transparent substrates

NASA Technical Reports Server (NTRS)

Paley, M. S.; Frazier, D. O.; Abdeldeyem, H.; Armstrong, S.; McManus, S. P.

1995-01-01

Polydiacetylenes are a very promising class of polymers for both photonic and electronic applications because of their highly conjugated structures. For these applications, high-quality thin polydiacetylene films are required. We have discovered a novel technique for obtaining such films of a polydiacetylene derivative of 2-methyl-4-nitroaniline using photodeposition from monomer solutions onto UV transparent substrates. This heretofore unreported process yields amorphous polydiacetylene films with thicknesses on the order of I micron that have optical quality superior to that of films grown by standard crystal growth techniques. Furthermore, these films exhibit good third-order nonlinear optical susceptibilities; degenerate four-wave mixing experiments give x(3) values on the order of 10(exp -8) - 10(exp -7) esu. We have conducted masking experiments which demonstrate that photodeposition occurs only where the substrate is directly irradiated, clearly indicating that the reaction occurs at the surface. Additionally, we have also been able to carry out photodeposition using lasers to form thin polymer circuits. In this work, we discuss the photodeposition of polydiacetylene thin films from solution, perform chemical characterization of these films, investigate the role of the substrate, speculate on the mechanism of the reaction, and make a preliminary determination of the third-order optical nonlinearity of the films. This simple, straightforward technique may ultimately make feasible the production of polydiacetylene thin films for technological applications.

Overcoming Short-Circuit in Lead-Free CH3NH3SnI3 Perovskite Solar Cells via Kinetically Controlled Gas-Solid Reaction Film Fabrication Process.

PubMed

Yokoyama, Takamichi; Cao, Duyen H; Stoumpos, Constantinos C; Song, Tze-Bin; Sato, Yoshiharu; Aramaki, Shinji; Kanatzidis, Mercouri G

2016-03-03

The development of Sn-based perovskite solar cells has been challenging because devices often show short-circuit behavior due to poor morphologies and undesired electrical properties of the thin films. A low-temperature vapor-assisted solution process (LT-VASP) has been employed as a novel kinetically controlled gas-solid reaction film fabrication method to prepare lead-free CH3NH3SnI3 thin films. We show that the solid SnI2 substrate temperature is the key parameter in achieving perovskite films with high surface coverage and excellent uniformity. The resulting high-quality CH3NH3SnI3 films allow the successful fabrication of solar cells with drastically improved reproducibility, reaching an efficiency of 1.86%. Furthermore, our Kelvin probe studies show the VASP films have a doping level lower than that of films prepared from the conventional one-step method, effectively lowering the film conductivity. Above all, with (LT)-VASP, the short-circuit behavior often obtained from the conventional one-step-fabricated Sn-based perovskite devices has been overcome. This study facilitates the path to more successful Sn-perovskite photovoltaic research.

Short communication: Effect of active food packaging materials on fluid milk quality and shelf life.

PubMed

Wong, Dana E; Goddard, Julie M

2014-01-01

Active packaging, in which active agents are embedded into or on the surface of food packaging materials, can enhance the nutritive value, economics, and stability of food, as well as enable in-package processing. In one embodiment of active food packaging, lactase was covalently immobilized onto packaging films for in-package lactose hydrolysis. In prior work, lactase was covalently bound to low-density polyethylene using polyethyleneimine and glutaraldehyde cross-linkers to form the packaging film. Because of the potential contaminants of proteases, lipases, and spoilage organisms in typical enzyme preparations, the goal of the current work was to determine the effect of immobilized-lactase active packaging technology on unanticipated side effects, such as shortened shelf-life and reduced product quality. Results suggested no evidence of lipase or protease activity on the active packaging films, indicating that such active packaging films could enable in-package lactose hydrolysis without adversely affecting product quality in terms of dairy protein or lipid stability. Storage stability studies indicated that lactase did not migrate from the film over a 49-d period, and that dry storage resulted in 13.41% retained activity, whereas wet storage conditions enabled retention of 62.52% activity. Results of a standard plate count indicated that the film modification reagents introduced minor microbial contamination; however, the microbial population remained under the 20,000 cfu/mL limit through the manufacturer's suggested 14-d storage period for all film samples. This suggests that commercially produced immobilized lactase active packaging should use purified cross-linkers and enzymes. Characterization of unanticipated effects of active packaging on food quality reported here is important in demonstrating the commercial potential of such technologies. Copyright © 2014 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Epitaxy of mercury-based high temperature superconducting films on oxide and metal substrates

NASA Astrophysics Data System (ADS)

Xie, Yi-Yuan

High-Tc superconducting (HTS) cuprates are highly anisotropic thus epitaxy along certain crystalline directions is essential to realize high-current-carrying capability at temperatures above 77 K. Hg-based HTS (Hg-HTS) cuprates have the record-high Tc up to 135 K, therefore are of great interest for fundamental research and practical applications. However, growth Of epitaxial Hg-HTS films is extremely difficult in conventional thermal-reaction process since Hg is highly volatile. Motivated by this, we first developed a cation-exchange process for growing epitaxial Hg-HTS films, which involves two steps: selection of precursor matrices with predesigned structure and composition followed by cation-exchange processing. New materials are formed via "atomic surgery" on an existing structure rather than thermal reaction among amorphous oxides in conventional process, thus the structural features of the precursor are inherited by the new material. Using epitaxial Tl-based HTS films as precursor and annealing them in Hg-vapor, epitaxial Hg-HTS films with superior quality have been obtained. This success encouraged us to develop epitaxy on metal tapes for coated conductors and On large-area wafers for electronic devices. For coated conductors, we addressed three critical issues: epitaxy on metal substrates, enhancement of in-field Jcs and scale-up in thickness and length. First, using a fabrication scheme that combines two processes: cation-exchange and fast-temperature-ramping-annealing, epitaxial HgBa2CaCu2O6+delta films were grown on rolling-assisted-biaxially-textured Ni substrates buffered with CeO 2/YSZ/CeO2 for the first time. We fabricated HgBa2CaCu 2O6+delta coated conductors with Tc = 122--124 K and self-field Jc > 1 x 106A/cm2 at 92 K which are record-high for HTS coated conductors. Second, we demonstrated improved in-field J cs via overdoping HgBa2CaCu 2O6+delta films (by means Of charge "overdoped"), heavy-ion-irradiation and substrate engineering. Finally, thick HgBa 2CaCu2O6+delta films show high I c, and spool process also shows potential in middle-length tape fabrication. These results make Hg-HTS films good candidates as power transmission wires/tapes. For large-area epitaxy, ½ inch x ½ inch HgBa2CaCu 2O6+delta films were synthesized on LaAlO3(100) with uniform and high Tcs and Jc s. A new crucible Hg-annealing technique that requires neither vacuum nor torch-sealing has been invented, promising for large-area wafers and long tapes/wires. So far HgBa2CaCu2O6+delta films with good quality have been reproducibly fabricated using this new technique.

The Effect of Gravity Axis Orientation on the Growth of Phthalocyanine Thin Films

NASA Technical Reports Server (NTRS)

Pearson, Earl F.

1996-01-01

Experimentally, many of the functions of electrical circuits have been demonstrated using optical circuits and, in theory, all of these functions may be accomplished using optical devices made of nonlinear optical materials. Actual construction of nonlinear optical devices is one of the most active areas in all optical research being done at this time. Physical vapor transport (PVT) is a promising technique for production of thin films of a variety of organic and inorganic materials. Film optical quality, orientation of microcrystals, and thickness depends critically on type of material, pressure of buffer gas and temperature of deposition. An important but understudied influence on film characteristics is the effect of gravity-driven buoyancy. Frazier, Hung, Paley, Penn and Long have recently reported mathematical modelling of the vapor deposition process and tested the predictions of the model on the thickness of films grown by PVT of 6-(2-methyl-4-nitroanilino)-2,4-hexadiyn-l-ol (DAMNA). In an historic experiment, Debe, et. al. offered definitive proof that copper phthalocyanine films grown in a low gravity environment are denser and more ordered than those grown at 1 g. This work seeks to determine the influence on film quality of gravity driven buoyancy in the low pressure PVT film growth of metal-free phthalocyanine.

Antimicrobial edible films and coatings for fresh and minimally processed fruits and vegetables: a review.

PubMed

Valencia-Chamorro, Silvia A; Palou, Lluís; Del Río, Miguel A; Pérez-Gago, María B

2011-01-01

The use of edible films and coatings is an environmentally friendly technology that offers substantial advantages for shelf-life increase of many food products including fruits and vegetables. The development of new natural edible films and coatings with the addition of antimicrobial compounds to preserve fresh and minimally processed fruits and vegetables is a technological challenge for the industry and a very active research field worldwide. Antimicrobial agents have been successfully added to edible composite films and coatings based on polysaccharides or proteins such as starch, cellulose derivatives, chitosan, alginate, fruit puree, whey protein isolated, soy protein, egg albumen, wheat gluten, or sodium caseinate. This paper reviews the development of edible films and coatings with antimicrobial activity, typically through the incorporation of antimicrobial food additives as ingredients, the effect of these edible films on the control of target microorganisms, the influence of antimicrobial agents on mechanical and barrier properties of stand-alone edible films, and the effect of the application of antimicrobial edible coatings on the quality of fresh and fresh-cut fruits and vegetables.

Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol-Gel Process and H2 Gas Sensing Performance

NASA Astrophysics Data System (ADS)

Dey, Anup; Roy, Subhashis; Sarkar, Subir Kumar

2018-03-01

In this paper, an attempt is made to deposit ZnO thin films using sol-gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H2 gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.

Controlled thickness and dielectric constant titanium-doped SiO2 thin films on silicon by sol gel process

NASA Astrophysics Data System (ADS)

Liu, H. L.; Wang, S. S.; Zhou, Yan; Lam, Yee Loy; Chan, Yuen Chuen; Kam, Chan Hin

1997-08-01

In this paper, we report the preparation of crack-free relatively thick SiO2-TiO2 thin films on silicon substrates using the sol-gel spin-coating method. The influence of the process parameters on the quality of the film, such as the solution condition, the spin-coating speed, the heat treatment temperature and time, have been studied. We found that the cracking of the film could be avoided by selecting the right sol composition ratios, adding PVA to the sold and properly controlling the heat treatment. Most importantly, we discovered that by polishing the edges of the film after the deposition of each single layer, the number of such layers that deposited without crack formation could be substantially increased. The refractive index profile and thickness of the film have been determined using prism coupling technique and the inverse WKB method. The refractive index was found to depend on the content of TiO2 as well as the heat treatment condition. Using an AFM, the surface morphology of the film was found to be good.

Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

NASA Astrophysics Data System (ADS)

Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

2015-04-01

This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

NASA Astrophysics Data System (ADS)

Korir, Peter C.; Dejene, Francis B.

2018-04-01

In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

NASA Astrophysics Data System (ADS)

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-03-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices.

Analysis of DuPont and Kodak duplicating films and chemistries in a Fultron spray processor

NASA Technical Reports Server (NTRS)

Weinstein, M. S.

1972-01-01

A test program was conducted with duPont duplicating film type SR 112 and SCOLOR developer and Kodak duplicating film types 2430, 2422, and FE 2628 (SO-467) and MX-641 developer to determine sensitometric and image quality characteristics of these materials when used with a fultron spray processor. The test results show that the SCOLOR developer foams excessively in the fultron processor when used with or without the addition of an antifoaming agent. The Kodak type FE 2628 film with MX-641 chemistry had the longest linear Log E range at a 1.0 gamma. Sensitometric curves and granularity traces for all film process combinations tested are included.

Disability in Full-Length Feature Films: Frequency and Quality of Films over an 11 Year Span.

ERIC Educational Resources Information Center

Byrd, E. Keith; Elliot, Timothy R.

1988-01-01

This study assessed the presentation of disabling conditions in feature films and the general quality of these films (as judged by professional film critics' reviews and movie-goer ratings). Psychiatric disorder was the disability most frequently depicted. Films varied in quality with critics markedly more negative in their reviews than movie…

First International Public Health Film Competition 2016-reflections on the development and use of competition judging criteria.

PubMed

Hoang, U; Luna, P; Russell, P; Bergonzi-King, L; Ashton, J; McCarthy, C; Donovan, H; Inman, P; Seminog, O; Botchway, S

2018-03-01

Film competitions can be a helpful method to understand issues of quality in health films. In this paper, we describe the development and use of explicit quality criteria to identify the 'best' films for the first ever international public health film competition. A film selection committee encompassing a range of stakeholders was compiled. The committee drew up 10 explicit quality criteria to judge films drawing upon other film festival's selection criteria. These criteria were then applied to a broad range of health-related films entered into a film competition to select the 'best' film to screen. Eighty-four films from 20 different countries were submitted to the public health film competition. The originality of the subject covered by the film, the public health importance of the issue and story-telling approach in the film were found to be the most discriminatory criteria to select films. Selection of health films for festivals can be undertaken using explicit quality criteria. There are a number of advantages to such an approach; however, explicit selection involves a large commitment of resources from film festival organizers and there is further research required to test the validity of the quality criteria applied to health-related films.

Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

NASA Astrophysics Data System (ADS)

Taha, Hatem; Jiang, Zhong-Tao; Henry, David J.; Amri, Amun; Yin, Chun-Yang; Mahbubur Rahman, M.

2017-06-01

The focus of this study is on a sol-gel method combined with spin-coating to prepare high-quality transparent conducting oxide (TCO) films. The structural, morphological, optical and electrical properties of sol-gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e. 0 at%, 2 at% and 4 at%) and annealing temperatures (150 °C-600 °C). FESEM measurements indicate that all the films are ˜350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasing the Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C, with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%, respectively. The electrical and optical properties improved as the annealing temperature increased, with an enlarged electronic energy band gap and an optical absorption edge below 280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a 4 at% Ti content improved from 87% and 7.10 × 10-4 Ω.cm to 92% and 1.6 × 10-4 Ω.cm, respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable for many applications such as flexible electronics. These results demonstrate that unlike the more expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be achieved by fast processing, simple wet-chemistry, and easy doping level control with the possibility of producing films with high scalability.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

PubMed

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

On the modeling of separation foils in thermoforming simulations

NASA Astrophysics Data System (ADS)

Margossian, Alexane; Bel, Sylvain; Hinterhölzl, Roland

2016-10-01

Composite forming simulations consist in modelling the forming process of composite components to anticipate the occurrence of potential flaws such as out-of-plane wrinkles and fibre re-orientation. Forming methods often consist of automated processes in which flat composite blanks are forced to comply with tool geometries. Although Finite Element forming simulations require the modelling of all stakeholders (blankholder, tooling and composite blank), consumables such as separation films are often not considered. Used in thermoforming processes, these films are placed between tooling and composite to ease part removal after forming. These films are also used to decrease tool/ply friction and thus, enhance forming quality. This work presents thermoforming simulations of pre-impregnated carbon fibre thermoplastic blanks in which separation films are modelled in the same manner as composite layers, i.e. by a layer of shell elements. The mechanical properties of such films are also characterised at the same temperature as forming occurs. The proposed approach is finally compared to the actual modelling method, in which separation films are not modelled as such but in which their influence is only considered within the friction coefficient between tooling and blank.

Digital processing of radiographic images from PACS to publishing.

PubMed

Christian, M E; Davidson, H C; Wiggins, R H; Berges, G; Cannon, G; Jackson, G; Chapman, B; Harnsberger, H R

2001-03-01

Several studies have addressed the implications of filmless radiologic imaging on telemedicine, diagnostic ability, and electronic teaching files. However, many publishers still require authors to submit hard-copy images for publication of articles and textbooks. This study compares the quality digital images directly exported from picture archive and communications systems (PACS) to images digitized from radiographic film. The authors evaluated the quality of publication-grade glossy photographs produced from digital radiographic images using 3 different methods: (1) film images digitized using a desktop scanner and then printed, (2) digital images obtained directly from PACS then printed, and (3) digital images obtained from PACS and processed to improve sharpness prior to printing. Twenty images were printed using each of the 3 different methods and rated for quality by 7 radiologists. The results were analyzed for statistically significant differences among the image sets. Subjective evaluations of the filmless images found them to be of equal or better quality than the digitized images. Direct electronic transfer of PACS images reduces the number of steps involved in creating publication-quality images as well as providing the means to produce high-quality radiographic images in a digital environment.

Process optimization of ultrasonic spray coating of polymer films.

PubMed

Bose, Sanjukta; Keller, Stephan S; Alstrøm, Tommy S; Boisen, Anja; Almdal, Kristoffer

2013-06-11

In this work we have performed a detailed study of the influence of various parameters on spray coating of polymer films. Our aim is to produce polymer films of uniform thickness (500 nm to 1 μm) and low roughness compared to the film thickness. The coatings are characterized with respect to thickness, roughness (profilometer), and morphology (optical microscopy). Polyvinylpyrrolidone (PVP) is used to do a full factorial design of experiments with selected process parameters such as temperature, distance between spray nozzle and substrate, and speed of the spray nozzle. A mathematical model is developed for statistical analysis which identifies the distance between nozzle and substrate as the most significant parameter. Depending on the drying of the sprayed droplets on the substrate, we define two broad regimes, "dry" and "wet". The optimum condition of spraying lies in a narrow window between these two regimes, where we obtain a film of desired quality. Both with increasing nozzle-substrate distance and temperature, the deposition moves from a wet state to a dry regime. Similar results are also achieved for solvents with low boiling points. Finally, we study film formation during spray coating with poly (D,L-lactide) (PDLLA). The results confirm the processing knowledge obtained with PVP and indicate that the observed trends are identical for spraying of other polymer films.

Effect of processing time delay on the dose response of Kodak EDR2 film.

PubMed

Childress, Nathan L; Rosen, Isaac I

2004-08-01

Kodak EDR2 film is a widely used two-dimensional dosimeter for intensity modulated radiotherapy (IMRT) measurements. Our clinical use of EDR2 film for IMRT verifications revealed variations and uncertainties in dose response that were larger than expected, given that we perform film calibrations for every experimental measurement. We found that the length of time between film exposure and processing can affect the absolute dose response of EDR2 film by as much as 4%-6%. EDR2 films were exposed to 300 cGy using 6 and 18 MV 10 x 10 cm2 fields and then processed after time delays ranging from 2 min to 24 h. An ion chamber measured the relative dose for these film exposures. The ratio of optical density (OD) to dose stabilized after 3 h. Compared to its stable value, the film response was 4%-6% lower at 2 min and 1% lower at 1 h. The results of the 4 min and 1 h processing time delays were verified with a total of four different EDR2 film batches. The OD/dose response for XV2 films was consistent for time periods of 4 min and 1 h between exposure and processing. To investigate possible interactions of the processing time delay effect with dose, single EDR2 films were irradiated to eight different dose levels between 45 and 330 cGy using smaller 3 x 3 cm2 areas. These films were processed after time delays of 1, 3, and 6 h, using 6 and 18 MV photon qualities. The results at all dose levels were consistent, indicating that there is no change in the processing time delay effect for different doses. The difference in the time delay effect between the 6 and 18 MV measurements was negligible for all experiments. To rule out bias in selecting film regions for OD measurement, we compared the use of a specialized algorithm that systematically determines regions of interest inside the 10 x 10 cm2 exposure areas to manually selected regions of interest. There was a maximum difference of only 0.07% between the manually and automatically selected regions, indicating that the use of a systematic algorithm to determine regions of interest in large and fairly uniform areas is not necessary. Based on these results, we recommend a minimum time of 1 h between exposure and processing for all EDR2 film measurements.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Switchable and tunable film bulk acoustic resonator fabricated using barium strontium titanate active layer and Ta{sub 2}O{sub 5}/SiO{sub 2} acoustic reflector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sbrockey, N. M., E-mail: sbrockey@structuredmaterials.com; Tompa, G. S.; Kalkur, T. S.

2016-08-01

A solidly mounted acoustic resonator was fabricated using a Ba{sub 0.60}Sr{sub 0.40}TiO{sub 3} (BST) film deposited by metal organic chemical vapor deposition. The device was acoustically isolated from the substrate using a Bragg reflector consisting of three pairs of Ta{sub 2}O{sub 5}/SiO{sub 2} layers deposited by chemical solution deposition. Transmission electron microscopy verified that the Bragg reflector was not affected by the high temperatures and oxidizing conditions necessary to process high quality BST films. Electrical characterization of the resonator demonstrated a quality factor (Q) of 320 and an electromechanical coupling coefficient (K{sub t}{sup 2}) of 7.0% at 11 V.

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Automated Fiber Placement of PEEK/IM7 Composites with Film Interleaf Layers

NASA Technical Reports Server (NTRS)

Hulcher, A. Bruce; Banks, William I., III; Pipes, R. Byron; Tiwari, Surendra N.; Cano, Roberto J.; Johnston, Norman J.; Clinton, R. G., Jr. (Technical Monitor)

2001-01-01

The incorporation of thin discrete layers of resin between plies (interleafing) has been shown to improve fatigue and impact properties of structural composite materials. Furthermore, interleafing could be used to increase the barrier properties of composites used as structural materials for cryogenic propellant storage. In this work, robotic heated-head tape placement of PEEK/IM7 composites containing a PEEK polymer film interleaf was investigated. These experiments were carried out at the NASA Langley Research Center automated fiber placement facility. Using the robotic equipment, an optimal fabrication process was developed for the composite without the interleaf. Preliminary interleaf processing trials indicated that a two-stage process was necessary; the film had to be tacked to the partially-placed laminate then fully melted in a separate operation. Screening experiments determined the relative influence of the various robotic process variables on the peel strength of the film-composite interface. Optimization studies were performed in which peel specimens were fabricated at various compaction loads and roller temperatures at each of three film melt processing rates. The resulting data were fitted with quadratic response surfaces. Additional specimens were fabricated at placement parameters predicted by the response surface models to yield high peel strength in an attempt to gage the accuracy of the predicted response and assess the repeatability of the process. The overall results indicate that quality PEEK/lM7 laminates having film interleaves can be successfully and repeatability fabricated by heated head automated fiber placement.

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

NASA Technical Reports Server (NTRS)

Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin G.; Abdeldayem, Hossin A.; Smith, David D.; Witherow, William K.

1997-01-01

Some of the primary purposes of this work are to study important technologies, particularly involving thin films, relevant to organic and polymeric materials for improving applicability to optical circuitry and devices and to assess the contribution of convection on film quality in unit and microgravity environments. Among the most important materials processing techniques of interest in this work are solution-based and by physical vapor transport, both having proven gravitational and acceleration dependence. In particular, PolyDiAcetylenes (PDA's) and PhthaloCyanines (Pc's) are excellent NonLinear Optical (NLO) materials with the promise of significantly improved NLO properties through order and film quality enhancements possible through microgravity processing. Our approach is to focus research on integrated optical circuits and optoelectronic devices relevant to solution-based and vapor processes of interest in the Space Sciences Laboratory at the Marshall Space Flight Center (MSFC). Modification of organic materials is an important aspect of achieving more highly ordered structures in conjunction with microgravity processing. Parallel activities include characterization of materials for particular NLO properties and determination of appropriation device designs consistent with selected applications. One result of this work is the determination, theoretically, that buoyancy-driven convection occurs at low pressures in an ideal gas in a thermalgradient from source to sink. Subsequent experiment supports the theory. We have also determined theoretically that buoyancy-driven convection occurs during photodeposition of PDA, an MSFC-patented process for fabricating complex circuits, which is also supported by experiment. Finally, the discovery of intrinsic optical bistability in metal-free Pc films enables the possibility of the development of logic gate technology on the basis of these materials.

PZT piezoelectric films on glass for Gen-X imaging

NASA Astrophysics Data System (ADS)

Wilke, Rudeger H. T.; Trolier-McKinstry, Susan; Reid, Paul B.; Schwartz, Daniel A.

2010-09-01

The proposed adaptive optics system for the Gen-X telescope uses piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. The low softening transition of the glass substrates imposes several processing challenges that require the development of new approaches to deposit high quality PZT thin films. Synthesis and optimization of chemical solution deposited 1 μm thick films of PbZr0.52Ti0.48O3 on small area (1 in2) and large area (16 in2) Pt/Ti/glass substrates has been performed. In order to avoid warping of the glass at temperatures typically used to crystallize PZT films ({700°C), a lower temperature, two-step crystallization process was employed. An {80 nm thick seed layer of PbZr0.30Ti0.70O3 was deposited to promote the growth of the perovskite phase. After the deposition of the seed layer, the films were annealed in a rapid thermal annealing (RTA) furnace at 550°C for 3 minutes to nucleate the perovskite phase. This was followed by isothermal annealing at 550°C for 1 hour to complete crystallization. For the subsequent PbZr0.52Ti0.48O3 layers, the same RTA protocol was performed, with the isothermal crystallization implemented following the deposition of three PbZr0.52Ti0.48O3 spin-coated layers. Over the frequency range of 1 kHz to 100 kHz, films exhibit relative permittivity values near 800 with loss tangents below 0.07. Hysteresis loops show low levels of imprint with coercive fields of 40-50 kV/cm in the forward direction and 50-70 kV/cm in the reverse direction. The remanent polarization varied from 25-35 μC/cm2 and e31,f values were approximately -5.0 C/m2. In scaling up the growth procedure to large area films, where warping becomes more pronounced due to the increased size of the substrate, the pyrolysis and crystallization conditions were performed in a box furnace to improve the temperature uniformity. By depositing films on both sides of the glass substrate, the tensile stresses are balanced, providing a sufficiently flat surface to continue PZT deposition. The properties of the large area film are comparable to those obtained on small substrates. While sol-gel processing is a viable approach to the deposition of high quality PZT thin films on glass substrates, preliminary results using RF magnetron sputter deposition demonstrate comparable properties with a significantly simpler process that offers a superior route for large scale production.

Vapor-Phase Atomic Layer Deposition of Co9S8 and Its Application for Supercapacitors.

PubMed

Li, Hao; Gao, Yuanhong; Shao, Youdong; Su, Yantao; Wang, Xinwei

2015-10-14

Atomic layer deposition (ALD) of cobalt sulfide (Co9S8) is reported. The deposition process uses bis(N,N'-diisopropylacetamidinato)cobalt(II) and H2S as the reactants and is able to produce high-quality Co9S8 films with an ideal layer-by-layer ALD growth behavior. The Co9S8 films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co9S8 on high-aspect-ratio 3D nanostructures. As Co9S8 is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co9S8 on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.

High-quality Silicon Films Prepared by Zone-melting Recrystallization

NASA Technical Reports Server (NTRS)

Chen, C. K.; Geis, M. W.; Tsaur, B. Y.; Fan, J. C. C.

1984-01-01

The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.

Gravitational Effects on the Morphology and Kinetics of Photodeposition of Polydiacetylene Thin Films From Monomer Solutions

NASA Technical Reports Server (NTRS)

Paley, Mark S.; Antar, Basil; Witherow, William K.; Frazier, Donald O.

1999-01-01

The goal of this proposed work is to study gravitational effects on the photodeposition of polydiacetylene thin films from monomer solutions onto transparent substrates. Polydiacetylenes have been an extensively studied class of organic polymers because they exhibit many unusual and interesting properties, including electrical conductivity and optical nonlinearity. Their long polymeric chains render polydiacetylenes readily conducive to thin film formation, which is necessary for many applications. These applications require thin polydiacetylene films possessing uniform thicknesses, high purity, minimal inhomogeneities and defects (such as scattering centers), etc. Also, understanding and controlling the microstructure and morphology of the films is important for optimizing their electronic and optical properties. The lack of techniques for processing polydiacetylenes into such films has been the primary limitation to their commercial use. We have recently discovered a novel method for the formation of polydiacetylene thin films using photo-deposition from monomer solutions onto transparent substrates with UV light. This technique is very simple to carry out, and can yield films with superior quality to those produced by conventional methods. Furthermore, these films exhibit good third-order properties and are capable of waveguiding. We have been actively studying the chemistry of diacetylene polymerization in solution and the photo-deposition of polydiacetylene thin films from solution. It is well-known that gravitational factors such as buoyancy-driven convection and sedimentation can affect chemical and mass transport processes in solution. One important aspect of polydiacetylene thin film photodeposition in solution, relevant to microgravity science, is that heat generated by absorption of UV radiation induces thermal density gradients that under the influence of gravity, can cause fluid flows (buoyancy-driven convection). Additionally, changes in the chemical composition of the solution during polymerization may cause solutal convection. These fluid flows affect transport of material to and from the film surface and thereby affect the kinetics of the growth process. This manifests itself in the morphology of the resulting films; films grown under the influence of convection tend to have less uniform thicknesses, and can possess greater inhomogeneities and defects. Specifically, polydiacetylene films photodeposited from solution, when viewed under a microscope, exhibit very small particles of solid polymer which get transported by convection from the bulk solution to the surface of the growing film and become embedded. Even when carried out under conditions designed to minimize unstable density gradients (i.e., irradiating the solution from the top), some fluid flow still takes place (particles remain present in the films). It is also possible that defect nucleation may be occurring within the films or on the surface of the substrate; this, too, can be affected by convection (as is the case with crystal growth). Hence films grown in 1-g will, at best, still possess some defects. The objective of this proposal is to investigate, both in 1-g and in low-g, the effects of gravitational factors (primarily convection) on the dynamics of these processes, and on the quality, morphology, and properties of the films obtained.

Overall quality and shelf life of minimally processed and modified atmosphere packaged 'ready-to-eat' pomegranate arils.

PubMed

Ayhan, Zehra; Eştürk, Okan

2009-06-01

Minimally processed ready-to-eat pomegranate arils have become popular due to their convenience, high value, unique sensory characteristics, and health benefits. The objective of this study was to monitor quality parameters and to extend the shelf life of ready-to-eat pomegranate arils packaged with modified atmospheres. Minimally processed pomegranate arils were packed in PP trays sealed with BOPP film under 4 atmospheres including low and super atmospheric oxygen. Packaged arils were stored at 5 degrees C for 18 d and monitored for internal atmosphere and quality attributes. Atmosphere equilibrium was reached for all MAP applications except for high oxygen. As a general trend, slight or no significant change was detected in chemical and physical attributes of pomegranate arils during cold storage. The aerobic mesophilic bacteria were in the range of 2.30 to 4.51 log CFU/g at the end of the storage, which did not affect the sensory quality. Overall, the pomegranate arils packed with air, nitrogen, and enriched oxygen kept quality attributes and were acceptable to sensory panelists on day 18; however, marketability period was limited to 15 d for the low oxygen atmosphere. PP trays sealed with BOPP film combined with either passive or active modified atmospheres and storage at 5 degrees C provided commercially acceptable arils for 18 d with high quality and convenience.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1995-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less

High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 November 1994--15 November 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandwisch, D.W.

1997-02-01

The objectives of this subcontract are to advance Solar Cells, Inc.`s (SCI`s) photovoltaic manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. Activities during the second year of the program concentrated on process development, equipment design and testing, quality assurance, and ES and H programs. These efforts broadly addressed the issues of the manufacturing process for producing thin-film monolithic CdS/CdTe photovoltaic modules.

Improvement of the photovoltaic performance of Cu2ZnSn(S x Se1-x )4 solar cells by adding polymer in the precursor solution

NASA Astrophysics Data System (ADS)

Yang, Gang; Li, Yong-Feng; Yao, Bin; Ding, Zhan-Hui; Deng, Rui; Zhao, Hai-Feng; Zhang, Li-Gong; Zhang, Zhen-Zhong

2018-03-01

Kesterite Cu2ZnSn(S x Se1-x )4 (CZTSSe) thin films and related solar cells were successfully fabricated by a facile sol-gel method and selenization process. The influence of Polyvinylpyrrolidone (PVP) additive on the properties of the CZTSSe films and the power conversion efficiency (PCE) of the solar cells were investigated. The results reveal that the qualities of CZTSSe films can be manipulated by incorporating a small amount of PVP. With addition of 1 wt% of PVP, the smoothness and grain size of the CZTSSe films were greatly improved. The contact at the CZTSSe/Mo interface was also improved. As a result, the optimized PCE of solar cells improved from 2.24% to 4.34% after the addition of 1 wt% PVP due to the decrease of recombination at the interfaces. These results suggest that polymer addition in the precursor solution is a promising method for obtaining high quality of CZTSSe films and high-performance solar cells.

Antimicrobial (BN/PE) film combined with modified atmosphere packaging extends the shelf life of minimally processed fresh-cut iceberg lettuce.

PubMed

Kang, Sun-Chul; Kim, Min-Jeong; Park, In-Sik; Choi, Ung-Kyu

2008-03-01

This study was conducted to investigate the effect of modified atmosphere packaging (MAP) in combination with BN/PE film on the shelf life and quality of fresh-cut iceberg lettuce during cold storage. The total mesophilic population in the sample packed in BN/PE film under MAP conditions was dramatically reduced in comparison with that of PE film, PE film under MAP conditions, and BN/PE film. The O2 concentration in the BN/PE film under MAP conditions decreased slightly as the storage period progressed. The coloration of the iceberg lettuce progressed the slowest when it was packaged in BN/PE film under MAP conditions, followed by BN/PE film, PE film, and PE film under MAP conditions. The shelf life of fresh-cut iceberg lettuce packaged in the BN/PE film under MAP conditions was extended by more than 2 days at 10 degrees as compared with that of the BN/PE film in which the extension effect was more than 2 days longer than that of PE, PET, and OPP films.

Sol-gel preparation of silica and titania thin films

NASA Astrophysics Data System (ADS)

Thoř, Tomáš; Václavík, Jan

2016-11-01

Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

A Solar-Blind UV Detector Based on Graphene-Microcrystalline Diamond Heterojunctions.

PubMed

Wei, Minsong; Yao, Kaiyuan; Liu, Yumeng; Yang, Chen; Zang, Xining; Lin, Liwei

2017-09-01

An ultraviolet detector is demonstrated through a whole-wafer, thin diamond film transfer process to realize the heterojunction between graphene and microcrystalline diamond (MCD). Conventional direct transfer processes fail to deposit graphene onto the top surface of the MCD film. However, it is found that the 2 µm thick MCD diamond film can be easily peeled off from the growth silicon substrate to expose its smooth backside for the graphene transfer process for high-quality graphene/MCD heterojunctions. A vertical graphene/MCD/metal structure is constructed as the photodiode device using graphene as the transparent top electrode for solar-blind ultraviolet sensing with high responsivity and gain factor. As such, this material system and device architecture could serve as the platform for next-generation optoelectronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Investigation of chemical vapor deposition of garnet films for bubble domain memories

NASA Technical Reports Server (NTRS)

Besser, P. J.; Hamilton, T. N.

1973-01-01

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Overcoming Short-Circuit in Lead-Free CH 3 NH 3 SnI 3 Perovskite Solar Cells via Kinetically Controlled Gas–Solid Reaction Film Fabrication Process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Takamichi; Cao, Duyen H.; Stoumpos, Constantinos C.

2016-02-17

The development of Sn-based perovskite solar cells has been challenging because devices often show short-circuit behavior due to poor morphologies and undesired electrical properties of the thin films. A low-temperature vapor-assisted solution process (LT-VASP) has been employed as a novel kinetically controlled gas–solid reaction film fabrication method to prepare lead-free CH3NH3SnI3 thin films. We show that the solid SnI2 substrate temperature is the key parameter in achieving perovskite films with high surface coverage and excellent uniformity. The resulting high-quality CH3NH3SnI3 films allow the successful fabrication of solar cells with drastically improved reproducibility, reaching an efficiency of 1.86%. Furthermore, our Kelvinmore » probe studies show the VASP films have a doping level lower than that of films prepared from the conventional one-step method, effectively lowering the film conductivity. Above all, with (LT)-VASP, the short-circuit behavior often obtained from the conventional one-step-fabricated Sn-based perovskite devices has been overcome. This study facilitates the path to more successful Sn-perovskite photovoltaic research.« less

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

NASA Technical Reports Server (NTRS)

Levy, Moises; Sarma, Bimal K.

1994-01-01

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

TiN-buffered substrates for photoelectrochemical measurements of oxynitride thin films

NASA Astrophysics Data System (ADS)

Pichler, Markus; Pergolesi, Daniele; Landsmann, Steve; Chawla, Vipin; Michler, Johann; Döbeli, Max; Wokaun, Alexander; Lippert, Thomas

2016-04-01

Developing novel materials for the conversion of solar to chemical energy is becoming an increasingly important endeavour. Perovskite compounds based on bandgap tunable oxynitrides represent an exciting class of novel photoactive materials. To date, literature mostly focuses on the characterization of oxynitride powder samples which have undeniable technological interest but do not allow the investigation of fundamental properties such as the role of the crystalline quality and/or the surface crystallographic orientation toward photo-catalytic activity. The challenge of growing high quality oxynitride thin films arises from the availability of a suitable substrate, owing to strict material and processing requirements: effective lattice matching, sufficiently high conductivities, stability under high temperatures and in strongly reducing environments. Here, we have established the foundations of a model system incorporating a TiN-buffer layer which enables fundamental investigations into crystallographic surface orientation and crystalline quality of the photocatalyst against photo(electro)chemical performance to be effectively performed. Furthermore, we find that TiN as current collector enables control over the nitrogen content of oxynitride thin films produced by a modified pulsed laser deposition method and allows the growth of highly ordered LaTiO3-xNx thin films.

Integration of Product, Package, Process, and Environment: A Food System Optimization

NASA Technical Reports Server (NTRS)

Cooper, Maya R.; Douglas, Grace L.

2015-01-01

The food systems slated for future NASA missions must meet crew nutritional needs, be acceptable for consumption, and use resources efficiently. Although the current food system of prepackaged, moderately stabilized food items works well for International Space Station (ISS) missions, many of the current space menu items do not maintain acceptability and/or nutritive value beyond 2 years. Longer space missions require that the food system can sustain the crew for 3 to 5 years without replenishment. The task "Integration of Product, Package, Process, and Environment: A Food System Optimization" has the objective of optimizing food-product shelf life for the space-food system through product recipe adjustments, new packaging and processing technologies, and modified storage conditions. Two emergent food processing technologies were examined to identify a pathway to stable, wet-pack foods without the detrimental color and texture effects. Both microwave-assisted thermal sterilization (MATS) and pressure-assisted thermal stabilization (PATS) were evaluated against traditional retort processing to determine if lower heat inputs during processing would produce a product with higher micronutrient quality and longer shelf life. While MATS products did have brighter color and better texture initially, the advantages were not sustained. The non-metallized packaging film used in the process likely provided inadequate oxygen barrier. No difference in vitamin stability was evident between MATS and retort processed foods. Similarly, fruit products produced using PATS showed improved color and texture through 3 years of storage compared to retort fruit, but the vitamin stability was not improved. The final processing study involved freeze drying. Five processing factors were tested in factorial design to assess potential impact of each to the quality of freeze-dried food, including the integrity of the microstructure. The initial freezing rate and primary freeze drying temperature and pressure were linked to final product quality in freeze-dried corn, indicating processing modifications that could lead to improved product shelf life. Storage temperatures and packaging systems were also assessed for the impact to food quality. Reduced temperature storage had inconclusive impact to the progression of rancidity in butter cookies. Frozen storage was detrimental to fruit and vegetable textural attributes but refrigerated storage helped to sustain color and organoleptic ratings for plant-based foods. With regard to packaging systems, the metallized film overwrap significantly decreased the progression of the rancidity of butter cookies as compared to the highest barrier non-metallized film. The inclusion of oxygen scavengers resulted in noticeable moisture gains in butter cookies over time, independent of packaging film systems. Neither emergent processing technology nor the freeze dry optimization resulted in compelling quality differences from current space food provisions such that a five-year shelf life is likely with these processing changes alone. Using a combination of refrigeration and PATS processing is expected to result in organoleptically-acceptable fruit quality for most fruits through five years. The vitamin degradation will be aided somewhat by the cold temperatures but, given the labile nature of vitamin C, a more stable fortification method, such as encapsulation, should also be investigated to ensure vitamin delivery throughout the product life. Similarly, significant improvement to the packaging film used in the MATS processing, optimization of formulation for dielectric properties, vitamin fortification, and reduced temperature storage should be investigated as a hurdle approach to reach a five year shelf life in wet-pack entrees and soups. Baked goods and other environmentally-sensitive spaceflight foods will require an almost impenetrable barrier to protect the foods from oxygen and moisture ingress but scavengers and reduced storage temperature did not improve baked good shelf life and are not recommended at this time for these foods.

Development of aircraft lavatory compartments with improved fire resistance characteristics. Phase 4: Sandwich panel decorative ink development

NASA Technical Reports Server (NTRS)

Jayarajan, A.; Johnson, G. A.; Korver, G. L.; Anderson, R. A.

1983-01-01

Five chemically different resin systems with improved fire resistance properties were studied for a possible screenprinting ink application. Fire resistance is hereby defined as the cured ink possessing improvements in flammability, smoke emission, and thermal stability. The developed ink is for application to polyvinyl fluoride film. Only clear inks without pigments were considered. Five formulations were evaluated compared with KC4900 clear acrylic ink, which was used as a baseline. The tests used in the screening evaluation included viscosity, smoke and toxic gas emission, limiting oxygen index (LOI), and polyvinyl fluoride film (PVF) printability. A chlorofluorocarbon resin (FPC461) was selected for optimization studies. The parameters for optimization included screenprinting process performance, quality of coating, and flammability of screenprinted 0.051-mm (0.002-in.) white Tedlar. The quality of the screenprinted coating on Tedlar is dependent on viscosity, curing time, adhesion to polyvinyl fluoride film, drying time (both inscreen and as an applied film), and silk screen mesh material and porosity.

Cold Atmospheric-Pressure Plasmas Applied to Active Packaging of Fruits and Vegetables

NASA Astrophysics Data System (ADS)

Pedrow, Patrick; Fernandez, Sulmer; Pitts, Marvin

2008-10-01

Active packaging of fruits and vegetables uses films that absorb molecules from or contribute molecules to the produce. Applying uniform film to specific parts of a plant will enhance safe and economic adoption of expensive biofilms and biochemicals which would damage the plant or surrounding environment if misapplied. The pilot application will be to apply wax film to apples, replacing hot wax which is expensive and lowers the textural quality of the apple. The plasma zone will be obtained by increasing the voltage on an electrode structure until the electric field in the feed material (Argon + monomer) is sufficiently high to yield electron avalanches. The ``corona onset criterion'' is used to design the cold plasma reactor. The apple will be placed in a treatment chamber downstream from the activation zone. Key physical properties of the film will be measured. The deposition rate will be optimized in terms of economics and fruit surface quality for the purpose of determining if the technique is competitive in food processing plants.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

NASA Astrophysics Data System (ADS)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

2018-03-01

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

NASA Astrophysics Data System (ADS)

Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

2012-02-01

High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

NASA Astrophysics Data System (ADS)

Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

2016-01-01

It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

Efficient Planar Structured Perovskite Solar Cells with Enhanced Open-Circuit Voltage and Suppressed Charge Recombination Based on a Slow Grown Perovskite Layer from Lead Acetate Precursor.

PubMed

Li, Cong; Guo, Qiang; Wang, Zhibin; Bai, Yiming; Liu, Lin; Wang, Fuzhi; Zhou, Erjun; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2017-12-06

For planar structured organic-inorganic hybrid perovskite solar cells (PerSCs) with the poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) hole transport layer, the open-circuit voltage (V oc ) of the device is limited to be about 1.0 V, resulting in inferior performance in comparison with TiO 2 -based planar counterparts. Therefore, increasing V oc of the PEDOT:PSS-based planar device is an important way to enhance the efficiency of the PerSCs. Herein, we demonstrate a novel approach for perovskite film formation and the film is formed by slow growth from lead acetate precursor via a one-step spin-coating process without the thermal annealing (TA) process. Because the perovskite layer grows slowly and naturally, high-quality perovskite film can be achieved with larger crystalline particles, less defects, and smoother surface morphology. Ultraviolet absorption, X-ray diffraction, scanning electron microscopy, steady-state fluorescence spectroscopy (photoluminescence), and time-resolved fluorescence spectroscopy are used to clarify the crystallinity, morphology, and internal defects of perovskite thin films. The power conversion efficiency of p-i-n PerSCs based on slow-grown film (16.33%) shows greatly enhanced performance compared to that of the control device based on traditional thermally annealed perovskite film (14.33%). Furthermore, the V oc of the slow-growing device reaches 1.12 V, which is 0.1 V higher than that of the TA device. These findings indicate that slow growth of the perovskite layer from lead acetate precursor is a promising approach to achieve high-quality perovskite film for high-performance PerSCs.

Li diffusion in epitaxial (11 $bar 2$ 0) ZnO thin films

NASA Astrophysics Data System (ADS)

Wu, P.; Zhong, J.; Emanetoglu, N. W.; Chen, Y.; Muthukumar, S.; Lu, Y.

2004-06-01

Zinc oxide (ZnO) possesses many interesting properties, such as a wide energy bandgap, large photoconductivity, and high excitonic binding energy. Chemical-vapor-deposition-grown ZnO films generally show n-type conductivity. A compensation doping process is needed to achieve piezoelectric ZnO, which is needed for surface acoustic wave (SAW), bulk acoustic wave, and micro-electromechanical system devices. In this work, a gas-phase diffusion process is developed to achieve piezoelectric (11bar 20) ZnO films. Comparative x-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements confirmed that high crystal quality and good surface morphology were preserved after diffusion. Photoluminescence (PL) measurements show a broad band emission with a peak wavelength at ˜580 nm, which is associated with Li doping. The SAW, including both Rayleigh-wave and Love-wave modes, is achieved along different directions in piezoelectric (11bar 20) ZnO films grown on an r-plane sapphire substrate.

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.

1993-01-01

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

Radiation levels and image quality in patients undergoing chest X-ray examinations

NASA Astrophysics Data System (ADS)

de Oliveira, Paulo Márcio Campos; do Carmo Santana, Priscila; de Sousa Lacerda, Marco Aurélio; da Silva, Teógenes Augusto

2017-11-01

Patient dose monitoring for different radiographic procedures has been used as a parameter to evaluate the performance of radiology services; skin entrance absorbed dose values for each type of examination were internationally established and recommended aiming patient protection. In this work, a methodology for dose evaluation was applied to three diagnostic services: one with a conventional film and two with digital computerized radiography processing techniques. The x-ray beam parameters were selected and "doses" (specifically the entrance surface and incident air kerma) were evaluated based on images approved in European criteria during postero-anterior (PA) and lateral (LAT) incidences. Data were collected from 200 patients related to 200 PA and 100 LAT incidences. Results showed that doses distributions in the three diagnostic services were very different; the best relation between dose and image quality was found in the institution with the chemical film processing. This work contributed for disseminating the radiation protection culture by emphasizing the need of a continuous dose reduction without losing the quality of the diagnostic image.

Surface morphology of ultrathin graphene oxide films obtained by the SAW atomization

NASA Astrophysics Data System (ADS)

Balachova, Olga V.; Balashov, Sergey M.; Costa, Carlos A. R.; Pavani Filho, A.

2015-08-01

Lately, graphene oxide (GO) thin films have attracted much attention: they can be used as humidity-sensitive coatings in the surface acoustic wave (SAW) sensors; being functionalized, they can be used in optoelectronic or biodevices, etc. In this research we study surface morphology of small-area thin GO films obtained on Si and quartz substrates by deposition of very small amounts of H2O-GO aerosols produced by the SAW atomizer. An important feature of this method is the ability to work with submicrovolumes of liquids during deposition that provides relatively good control over the film thickness and quality, in particular, minimization of the coffee ring effect. The obtained films were examined using AFM and electron microscopy. Image analysis showed that the films consist of GO sheets of different geometry and sizes and may form discrete or continuous coatings at the surface of the substrates with the minimum thickness of 1.0-1.8 nm which corresponds to one or two monolayers of GO. The thickness and quality of the deposited films depend on the parameters of the SAW atomization (number of atomized droplets, a volume of the initial droplet, etc.) and on sample surface preparation (activation in oxygen plasma). We discuss the structure of the obtained films, uniformity and the surface coverage as a function of parameters of the film deposition process and sample preparation. Qualitative analysis of adhesion of GO films is made by rinsing the samples in DI water and subsequent evaluation of morphology of the remained films.

In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

1990-01-01

Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

1991-01-01

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

Optimization Control of the Color-Coating Production Process for Model Uncertainty

PubMed Central

He, Dakuo; Wang, Zhengsong; Yang, Le; Mao, Zhizhong

2016-01-01

Optimized control of the color-coating production process (CCPP) aims at reducing production costs and improving economic efficiency while meeting quality requirements. However, because optimization control of the CCPP is hampered by model uncertainty, a strategy that considers model uncertainty is proposed. Previous work has introduced a mechanistic model of CCPP based on process analysis to simulate the actual production process and generate process data. The partial least squares method is then applied to develop predictive models of film thickness and economic efficiency. To manage the model uncertainty, the robust optimization approach is introduced to improve the feasibility of the optimized solution. Iterative learning control is then utilized to further refine the model uncertainty. The constrained film thickness is transformed into one of the tracked targets to overcome the drawback that traditional iterative learning control cannot address constraints. The goal setting of economic efficiency is updated continuously according to the film thickness setting until this reaches its desired value. Finally, fuzzy parameter adjustment is adopted to ensure that the economic efficiency and film thickness converge rapidly to their optimized values under the constraint conditions. The effectiveness of the proposed optimization control strategy is validated by simulation results. PMID:27247563

Optimization Control of the Color-Coating Production Process for Model Uncertainty.

PubMed

He, Dakuo; Wang, Zhengsong; Yang, Le; Mao, Zhizhong

2016-01-01

Optimized control of the color-coating production process (CCPP) aims at reducing production costs and improving economic efficiency while meeting quality requirements. However, because optimization control of the CCPP is hampered by model uncertainty, a strategy that considers model uncertainty is proposed. Previous work has introduced a mechanistic model of CCPP based on process analysis to simulate the actual production process and generate process data. The partial least squares method is then applied to develop predictive models of film thickness and economic efficiency. To manage the model uncertainty, the robust optimization approach is introduced to improve the feasibility of the optimized solution. Iterative learning control is then utilized to further refine the model uncertainty. The constrained film thickness is transformed into one of the tracked targets to overcome the drawback that traditional iterative learning control cannot address constraints. The goal setting of economic efficiency is updated continuously according to the film thickness setting until this reaches its desired value. Finally, fuzzy parameter adjustment is adopted to ensure that the economic efficiency and film thickness converge rapidly to their optimized values under the constraint conditions. The effectiveness of the proposed optimization control strategy is validated by simulation results.

Room-Temperature and Solution-Processable Cu-Doped Nickel Oxide Nanoparticles for Efficient Hole-Transport Layers of Flexible Large-Area Perovskite Solar Cells.

PubMed

He, Qiqi; Yao, Kai; Wang, Xiaofeng; Xia, Xuefeng; Leng, Shifeng; Li, Fan

2017-12-06

Flexible perovskite solar cells (PSCs) using plastic substrates have become one of the most attractive points in the field of thin-film solar cells. Low-temperature and solution-processable nanoparticles (NPs) enable the fabrication of semiconductor thin films in a simple and low-cost approach to function as charge-selective layers in flexible PSCs. Here, we synthesized phase-pure p-type Cu-doped NiO x NPs with good electrical properties, which can be processed to smooth, pinhole-free, and efficient hole transport layers (HTLs) with large-area uniformity over a wide range of film thickness using a room-temperature solution-processing technique. Such a high-quality inorganic HTL allows for the fabrication of flexible PSCs with an active area >1 cm 2 , which have a power conversion efficiency over 15.01% without hysteresis. Moreover, the Cu/NiO x NP-based flexible devices also demonstrate excellent air stability and mechanical stability compared to their counterpart fabricated on the pristine NiO x films. This work will contribute to the evolution of upscaling flexible PSCs with a simple fabrication process and high device performances.

PEEK (polyether-ether-ketone)-coated nitinol wire: Film stability for biocompatibility applications

NASA Astrophysics Data System (ADS)

Sheiko, Nataliia; Kékicheff, Patrick; Marie, Pascal; Schmutz, Marc; Jacomine, Leandro; Perrin-Schmitt, Fabienne

2016-12-01

High quality biocompatible poly-ether-ether-ketone (PEEK) coatings were produced on NiTi shape memory alloy wires using dipping deposition from colloidal aqueous PEEK dispersions after substrate surface treatment. The surface morphology and microstructure were investigated by Scanning Electron Microscopy at every step of the process from the as-received Nitinol substrate to the ultimate PEEK-coated NiTi wire. Nanoscratch tests were carried out to access the adhesive behavior of the polymer coated film to the NiTi. The results indicate that the optimum process conditions in cleaning, chemical etching, and electropolishing the NiTi, were the most important and determining parameters to be achieved. Thus, high quality PEEK coatings were obtained on NiTi wires, straight or curved (even with a U-shape) with a homogeneous microstructure along the wire length and a uniform thickness of 12 μm without any development of cracks or the presence of large voids. The biocompatibility of the PEEK coating film was checked in fibrobast cultured cells. The coating remains stable in biological environment with negligible Ni ion release, no cytotoxicity, and no delamination observed with time.

Influence of substrate temperatures on the properties of GdF(3) thin films with quarter-wave thickness in the ultraviolet region.

PubMed

Jin, Jingcheng; Jin, Chunshui; Li, Chun; Deng, Wenyuan; Yao, Shun

2015-06-01

High-quality coatings of fluoride materials are in extraordinary demand for use in deep ultraviolet (DUV) lithography. Gadolinium fluoride (GdF₃) thin films were prepared by a thermal boat evaporation process at different substrate temperatures. GdF₃ thin film was set at quarter-wave thickness (∼27  nm) with regard to their common use in DUV/vacuum ultraviolet optical stacks; these thin films may significantly differ in nanostructural properties at corresponding depositing temperatures, which would crucially influence the performance of the multilayers. The measurement and analysis of optical, structural, and mechanical properties of GdF₃ thin films have been performed in a comprehensive characterization cycle. It was found that depositing GdF₃ thin films at relative higher temperature would form a rather dense, smooth, homogeneous structure within this film thickness scale.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

NASA Astrophysics Data System (ADS)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-05-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

Low-Temperature Soft-Cover Deposition of Uniform Large-Scale Perovskite Films for High-Performance Solar Cells.

PubMed

Ye, Fei; Tang, Wentao; Xie, Fengxian; Yin, Maoshu; He, Jinjin; Wang, Yanbo; Chen, Han; Qiang, Yinghuai; Yang, Xudong; Han, Liyuan

2017-09-01

Large-scale high-quality perovskite thin films are crucial to produce high-performance perovskite solar cells. However, for perovskite films fabricated by solvent-rich processes, film uniformity can be prevented by convection during thermal evaporation of the solvent. Here, a scalable low-temperature soft-cover deposition (LT-SCD) method is presented, where the thermal convection-induced defects in perovskite films are eliminated through a strategy of surface tension relaxation. Compact, homogeneous, and convection-induced-defects-free perovskite films are obtained on an area of 12 cm 2 , which enables a power conversion efficiency (PCE) of 15.5% on a solar cell with an area of 5 cm 2 . This is the highest efficiency at this large cell area. A PCE of 15.3% is also obtained on a flexible perovskite solar cell deposited on the polyethylene terephthalate substrate owing to the advantage of presented low-temperature processing. Hence, the present LT-SCD technology provides a new non-spin-coating route to the deposition of large-area uniform perovskite films for both rigid and flexible perovskite devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

NASA Astrophysics Data System (ADS)

Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

2018-04-01

Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering

PubMed Central

Petersen, Julien; Brimont, Christelle; Gallart, Mathieu; Schmerber, Guy; Gilliot, Pierre; Ulhaq-Bouillet, Corinne; Rehspringer, Jean-Luc; Colis, Silviu; Becker, Claude; Slaoui, Abdelillah; Dinia, Aziz

2010-01-01

We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu2+ and Eu3+ into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn2+ as Eu2+ into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu2O3 oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the 5D0→7F2 Eu3+ transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu3+ ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films. PMID:20644657

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Sub-100 μm scale on-chip inductors with CoZrTa for GHz applications

NASA Astrophysics Data System (ADS)

Xu, Wei; Wu, Hao; Gardner, Donald S.; Sinha, Saurabh; Dastagir, Tawab; Bakkaloglu, Bertan; Cao, Yu; Yu, Hongbin

2011-04-01

On-chip inductors with magnetic material are fabricated with complementary metal-oxide semiconductor processes. The inductors use copper metallization and amorphous CoZrTa thinfilms. Enhancements of 3.5X in inductance and 3X for the quality factor at frequencies as highas 3 GHz have been successfully demonstrated by using a continuous CoZrTa-ring structure in spiral inductors at the 100 μm scale. Further improvement of the frequency response of inductance up to 6 GHz was achieved by micro-patterning the magnetic film. The effect ofincreasing the film thickness on the performance of strip line inductors was measured and modeled. This work demonstrates significantly larger increases in inductance and quality factor atabove 1 GHz as compared to prior efforts, thereby making the added processing cost worthwhile.

Growth and characterization of CdS buffer layers by CBD and MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrone, A.A.; Huang, C.; Li, S.S.

1999-03-01

Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigationsmore » of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}« less

Superconducting Mercury-Based Cuprate Films with a Zero-Resistance Transition Temperature of 124 Kelvin

NASA Astrophysics Data System (ADS)

Tsuei, C. C.; Gupta, A.; Trafas, G.; Mitzi, D.

1994-03-01

The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O_2 environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa_2CaCu_2O6+δ films has been achieved.

Superconducting mercury-based cuprate films with a zero-resistance transition temperature of 124 Kelvin.

PubMed

Tsuei, C C; Gupta, A; Trafas, G; Mitzi, D

1994-03-04

The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O(2) environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa(2)CaCu(2)O(6+delta) films has been achieved.

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE PAGES

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann; ...

2018-05-11

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationshipmore » between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Furthermore, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Magnetic properties and thermal stability of Ti-doped CrO2 films

NASA Astrophysics Data System (ADS)

Zhang, Z.; Cheng, M.; Lu, Z.; Yu, Z.; Liu, S.; Liang, R.; Liu, Y.; Shi, J.; Xiong, R.

2018-04-01

Chromium dioxide (CrO2) is a striking half metal material which may have important applications in the field of spintronics. However, pure CrO2 film is metastable at room temperature and the synthesis process can be only performed in a narrow temperature range of 390-410 °C with TiO2 used as substrate material. Here, we report the preparation and investigation of (1 0 0) oriented Ti-doped CrO2 films on TiO2 substrates. It is found that Ti-doped films can maintain pure rutile phase even after a 510 °C post-annealing, showing much better thermal stability than pure CrO2 films. Ti-doped films can be prepared in a wider temperature window (390-470 °C), which may be attributed to the improvement of thermal stability. The broadening of process window may be beneficial for further improvement of film quality by optimizing growth temperature in a larger range. In addition to the improvement of thermal stability, the magnetic properties of Ti-doped CrO2 are also found to be tuned by Ti doping: saturation magnetizations of Ti-doped films at room temperature are significantly lower, and magnetic anisotropy decreases as the Ti-concentration increases, which is beneficial for decreasing switching current density in STT-based spintronic devices.

Edible films and coatings based on biodegradable residues applied to acerolas (Malpighia punicifolia L.).

PubMed

Ferreira, Mariana S L; Fai, Ana Elizabeth C; Andrade, Cristina T; Picciani, Paulo H; Azero, Edwin G; Gonçalves, Édira C B A

2016-03-30

This study aimed to produce and characterize edible films and coatings from fruit and vegetable residue (FVR) flour and potato peel (P) flour. Two coating approaches (immersion and film) were studied on the quality of acerolas. Film-forming solutions (FFS) presented a viscoelastic behavior and a gelation process occurring at 70 °C. Maximum density (1.018 g cm(-3) ), viscosity (44.404 cP) and starch content were obtained for FFS based on 8% FVR flour with 4% P flour. This same film presented enhanced mechanical properties such as tensile strength and elongation at break (0.092 MPa and 36% respectively). Solubility of the films averaged 87%, demonstrating high hydrophilicity. Improved performance was obtained for film-packaged acerolas, which exhibited an increase in shelf life of 50% compared with control fruits. A lower loss of weight was observed for these samples by about 30-57% compared with control fruits, but minor modifications of pH, titratable acidity and soluble solid content occurred during storage. This study demonstrated the potential of FVR flour for edible coating and film formulation. Practical application on acerolas constituted a motivating route to evaluate and optimize this process; however, microbiological and sensory analyses are necessary to assess the material acceptability and safety. © 2015 Society of Chemical Industry.

Optical Coherence Tomography Enabling Non Destructive Metrology of Layered Polymeric GRIN Material

PubMed Central

Meemon, Panomsak; Yao, Jianing; Lee, Kye-Sung; Thompson, Kevin P.; Ponting, Michael; Baer, Eric; Rolland, Jannick P.

2013-01-01

Gradient Refractive INdex (GRIN) optical components have historically fallen short of theoretical expectations. A recent breakthrough is the manufacturing of nanolayered spherical GRIN (S-GRIN) polymer optical elements, where the construction method yields refractive index gradients that exceed 0.08. Here we report on the application of optical coherence tomography (OCT), including micron-class axial and lateral resolution advances, as effective, innovative methods for performing nondestructive diagnostic metrology on S-GRIN. We show that OCT can be used to visualize and quantify characteristics of the material throughout the manufacturing process. Specifically, internal film structure may be revealed and data are processed to extract sub-surface profiles of each internal film of the material to quantify 3D film thickness and homogeneity. The technique provides direct feedback into the fabrication process directed at optimizing the quality of the nanolayered S-GRIN polymer optical components.

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl; Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP; Peuter, K. de

2015-07-06

The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takesmore » place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.« less

Enhanced Crystallization by Methanol Additive in Anti-solvent for Achieving High-quality MAPbI3 Perovskite Films in Humid Atmosphere.

PubMed

Yang, Fu; Kamarudin, Muhammad Akmal; Zhang, PuTao; Kapil, Gaurav; Ma, Tingli; Hayase, Shuzi

2018-05-04

Perovskite solar cells have attracted considerable attention owing to easy and low-cost solution manufacturing process with high power conversion efficiency. However, the fabrication process is usually performed inside glovebox to avoid the moisture, as organometallic halide perovskite is easily dissolved in water. In this study, we propose one-step fabrication of high-quality MAPbI3 perovskite films in 50 % RH humid ambient air by using diethyl ether as an anti-solvent and methanol as an additive into this anti-solvent. Because of the existence of methanol, the water molecules can be efficiently removed from the gaps of perovskite precursors and the perovskite film formation can be slightly controlled leading to pinhole-free and low roughness film. Concurrently, methanol can modify a proper DMSO ratio in the intermediate perovskite phase to regulate perovskite formation. Planar solar cells fabricated by using this method exhibited the best efficiency of 16.4 % with a reduced current density-voltage hysteresis. This efficiency value is approximately 160 % higher than the devices fabrication by using only diethyl ether treatment. From the impedance measurement, it is also found that the recombination reaction has been suppressed when the device prepared with additive anti-solvent way. This method presents a new path for controlling the growth and morphology of perovskite films in the humid climates and uncontrolled laboratories. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DMF as an Additive in a Two-Step Spin-Coating Method for 20% Conversion Efficiency in Perovskite Solar Cells.

PubMed

Wu, Jionghua; Xu, Xin; Zhao, Yanhong; Shi, Jiangjian; Xu, Yuzhuan; Luo, Yanhong; Li, Dongmei; Wu, Huijue; Meng, Qingbo

2017-08-16

DMF as an additive has been employed in FAI/MAI/IPA (FA= CH 2 (NH 2 ) 2 , MA = CH 3 NH 3 , IPA = isopropanol) solution for a two-step multicycle spin-coating method in order to prepare high-quality FA x MA 1-x PbI 2.55 Br 0.45 perovskite films. Further investigation reveals that the existence of DMF in the FAI/MAI/IPA solution can facilitate perovskite conversion, improve the film morphology, and reduce crystal defects, thus enhancing charge-transfer efficiency. By optimization of the DMF amount and spin-coating cycles, compact, pinhole-free perovskite films are obtained. The nucleation mechanisms of perovskite films in our multicycle spin-coating process are suggested; that is, the introduction of DMF in the spin-coating FAI/MAI/IPA solution can lead to the formation of an amorphous phase PbX 2 -AI-DMSO-DMF (X = I, Br; A = FA, MA) instead of intermediate phase (MA) 2 Pb 3 I 8 ·2DMSO. This amorphous phase, similar to that in the one-step method, can help FAI/MAI penetrate into the PbI 2 framework to completely convert into the perovskite. As high as 20.1% power conversion efficiency (PCE) has been achieved with a steady-state PCE of 19.1%. Our work offers a simple repeatable method to prepare high-quality perovskite films for high-performance PSCs and also help further understand the perovskite-crystallization process.

Oromucosal film preparations: classification and characterization methods.

PubMed

Preis, Maren; Woertz, Christina; Kleinebudde, Peter; Breitkreutz, Jörg

2013-09-01

Recently, the regulatory authorities have enlarged the variety of 'oromucosal preparations' by buccal films and orodispersible films. Various film preparations have entered the market and pharmacopoeias. Due to the novelty of the official monographs, no standardized characterization methods and quality specifications are included. This review reports the methods of choice to characterize oromucosal film preparations with respect to biorelevant characterization and quality control. Commonly used dissolution tests for other dosage forms are not transferable for films in all cases. Alternatives and guidance on decision, which methods are favorable for film preparations are discussed. Furthermore, issues about requirements for film dosage forms are reflected. Oromucosal film preparations offer a wide spectrum of opportunities. There are a lot of suggestions in the literature on how to control the quality of these innovative products, but no standardized tests are available. Regulatory authorities need to define the standards and quality requirements more precisely.

Ultrashort pulse laser deposition of thin films

DOEpatents

Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

2002-01-01

Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

A low energy muon spin rotation and point contact tunneling study of niobium films prepared for superconducting cavities

NASA Astrophysics Data System (ADS)

Junginger, Tobias; Calatroni, S.; Sublet, A.; Terenziani, G.; Prokscha, T.; Salman, Z.; Suter, A.; Proslier, T.; Zasadzinski, J.

2017-12-01

Point contact tunneling and low energy muon spin rotation are used to probe, on the same samples, the surface superconducting properties of micrometer thick niobium films deposited onto copper substrates using different sputtering techniques: diode, dc magnetron and HIPIMS. The combined results are compared to radio-frequency tests performances of RF cavities made with the same processes. Degraded surface superconducting properties are found to correlate to lower quality factors and stronger Q-slope. In addition, both techniques find evidence for surface paramagnetism on all samples and particularly on Nb films prepared by HIPIMS.

Evaluation of pH monitoring as a method of processor control.

PubMed

Stears, J G; Gray, J E; Winkler, N T

1979-01-01

Sensitometry and pH values of the developer solution were compared in controlled over-replenishment, developer depletion, fixer contamination experiments, and on a daily quality control basis. The purpose of these comparisons was to evaluate the potential of pH monitoring as a method of processor control, or a supplement to sensitometry as a method of quality control. Reasonable correlation was found between pH values and film density in two of the three experiments but little or no correlation was found in the third experiment and on a day-to-day basis. The conclusion drawn from these comparisons is that pH monitoring has several limitations which render it unsuitable as a method of daily processor quality control as either a primary or supplementary technique. Sensitometry takes into account all the variables encountered in film processing and is the clear method of choice for processor quality control.

Simple, green, and clean removal of a poly(methyl methacrylate) film on chemical vapor deposited graphene

NASA Astrophysics Data System (ADS)

Park, J.-H.; Jung, W.; Cho, D.; Seo, J.-T.; Moon, Y.; Woo, S. H.; Lee, C.; Park, C.-Y.; Ahn, J. R.

2013-10-01

The clean removal of a poly(methyl methacrylate) (PMMA) film on graphene has been an essential part of the process of transferring chemical vapor deposited graphene to a specific substrate, influencing the quality of the transferred graphene. Here we demonstrate that the clean removal of PMMA can be achieved by a single heat-treatment process without the chemical treatment that was adopted in other methods of PMMA removal. The cleanness of the transferred graphene was confirmed by four-point probe measurements, synchrotron radiation x-ray photoemission spectroscopy, optical images, and Raman spectroscopy.

Effect of thermal-convection-induced defects on the performance of perovskite solar cells

NASA Astrophysics Data System (ADS)

Ye, Fei; Xie, Fengxian; Yin, Maoshu; He, Jinjin; Wang, Yanbo; Tang, Wentao; Chen, Han; Yang, Xudong; Han, Liyuan

2017-07-01

Thermal-convection-induced defects can cause huge loss in the power conversion efficiency of solution-processed perovskite solar cells. We investigated two types of convection in perovskite solution during the formation of perovskite films. By balancing the convection via special configurations of surface tension and boiling point in mixed γ-butyrolactone (GBL) and dimethylsulfoxide (DMSO), we removed microscopic defects such as rings, bumps, and crevices. The deposited perovskite films were smooth and dense, which enabled a high power conversion efficiency of 17.7% in a 1 cm2 cell area. We believe that the present strategy for controlling the convection can be helpful in improving the perovskite film quality for solvent-rich scalable solution processes of solar cells such as doctor blading, soft-cover deposition, printing, and slot-die coating.

Incorporating digital imaging into dental hygiene practice.

PubMed

Saxe, M J; West, D J

1997-01-01

The objective of this paper is to describe digital imaging technology: available modalities, scientific imaging process, advantages and limitations, and applications to dental hygiene practice. Advances in technology have created innovative imaging modalities for intraoral radiography that eliminate film as the traditional image receptor. Digital imaging generates instantaneous radiographic images on a display monitor following exposure. Advantages include lower patient exposure per image and elimination of film processing. Digital imaging enhances diagnostic capabilities and, therefore, treatment decisions by the oral healthcare provider. Utilization of digital imaging technology for intraoral radiography will advance the practice of dental hygiene. Although spatial resolution is inferior to conventional film, digital imaging provides adequate resolution to diagnose oral diseases. Dental hygienists must evaluate new technologies in radiography to continue providing quality care while reducing patient exposure to ionizing radiation.

New-style defect inspection system of film

NASA Astrophysics Data System (ADS)

Liang, Yan; Liu, Wenyao; Liu, Ming; Lee, Ronggang

2002-09-01

An inspection system has been developed for on-line detection of film defects, which bases on combination of photoelectric imaging and digital image processing. The system runs in high speed of maximum 60m/min. Moving film is illuminated by LED array which emits even infrared (peak wavelength λp=940nm), and infrared images are obtained with a high quality and high speed CCD camera. The application software based on Visual C++6.0 under Windows processes images in real time by means of such algorithms as median filter, edge detection and projection, etc. The system is made up of four modules, which are introduced in detail in the paper. On-line experiment results shows that the inspection system can recognize defects precisely in high speed and run reliably in practical application.

Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications.

PubMed

Zhu, Ma-Guang; Si, Jia; Zhang, Zhiyong; Peng, Lian-Mao

2018-06-01

The main challenge for application of solution-derived carbon nanotubes (CNTs) in high performance field-effect transistor (FET) is how to align CNTs into an array with high density and full surface coverage. A directional shrinking transfer method is developed to realize high density aligned array based on randomly orientated CNT network film. Through transferring a solution-derived CNT network film onto a stretched retractable film followed by a shrinking process, alignment degree and density of CNT film increase with the shrinking multiple. The quadruply shrunk CNT films present well alignment, which is identified by the polarized Raman spectroscopy and electrical transport measurements. Based on the high quality and high density aligned CNT array, the fabricated FETs with channel length of 300 nm present ultrahigh performance including on-state current I on of 290 µA µm -1 (V ds = -1.5 V and V gs = -2 V) and peak transconductance g m of 150 µS µm -1 , which are, respectively, among the highest corresponding values in the reported CNT array FETs. High quality and high semiconducting purity CNT arrays with high density and full coverage obtained through this method promote the development of high performance CNT-based electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the use of Kodak CR film for quality assurance of needle loading in I-125 seed prostate brachytherapy.

PubMed

Fog, L S; Nicholls, R; van Doom, T

2007-09-01

Low dose rate brachytherapy using implanted I-125 seeds as a monotherapy for prostate cancer is now in use in many hospitals. In contrast to fractionated brachytherapy treatments, where the effect of incorrect positioning of the source in one treatment fraction can be diminished by correcting the position in subsequent fractions, the I-125 seed implant is permanent, making correct positioning of the seeds in the prostate essential. The seeds are inserted into the prostate using needles. Correct configuration of seeds in the needles is essential in order to deliver the planned treatment. A comparison of an autoradiograph obtained by exposing film to the seed-loaded needles with the patient treatment plan is a valuable quality assurance tool. However, the time required to sufficiently expose Kodak XOMAT V film, currently used in this department is significant. This technical note presents the use of Kodak CR film for acquisition of the radiograph. The digital radiograph can be acquired significantly faster, has superior signal-to-noise ratio and contrast and has the usual benefits of digital film, e.g. a processing time which is shorter than that required for non-digital film, the possibility of image manipulation, possibility of paper printing and electronic storage.

Photonic and Opto-Electronic Applications of Polydiacetylene Films Photodeposited from Solution and Polydiacetylene Copolymer Networks

NASA Technical Reports Server (NTRS)

Paley, Mark S.; Frazier, Donald O.; Smith, David D.; Witherow, William K.; Addeldeyem, Hossin A.; Wolfe, Daniel B.

1998-01-01

Polydiacetylenes (PDAS) are attractive materials for both electronic and photonic applications because of their highly conjugated electronic structures. They have been investigated for applications as both one-dimensional (linear chain) conductors and nonlinear optical (NLO) materials. One of the chief limitations to the use of PDAs has been the inability to readily process them into useful forms such as films and fibers. In our laboratory we have developed a novel process for obtaining amorphous films of a PDA derived from 2-methyl4-nitroaniline using photodeposition with Ultraviolet (UV) light from monomer solutions onto transparent substrates. Photodeposition from solution provides a simple technique for obtaining PDA films in any desired pattern with good optical quality. This technique has been used to produce PDA films that show potential for optical applications such as holographic memory storage and optical limiting, as well as third-order NLO applications such as all-optical refractive index modulation, phase modulation and switching. Additionally, copolymerization of diacetylenes with other monomers such as methacrylates provides a means to obtain materials with good processibility. Such copolymers can be spin cast to form films, or drawn by either melt or solution extrusion into fibers. These films or fibers can then be irradiated with UV to photopolymerize the diacetylene units to form a highly stable cross-linked PDA-copolymer network. If such films are electrically poled while being irradiated, they can achieve the asymmetry necessary for second-order NLO applications such as electro-optic switching. On Earth, formation of PDAs by the above mentioned techniques suffers from defects and inhomogeneities caused by convective flows that can arise during processing. By studying the formation of these materials in the reduced-convection, diffusion-controlled environment of space we hope to better understand the factors that affect their processing, and thereby, their nature and properties. Ultimately it may even be feasible to conduct space processing of PDAs for technological applications.

Nanoporous TiO2 and WO3 films by anodization of titanium and tungsten substrates: influence of process variables on morphology and photoelectrochemical response.

PubMed

de Tacconi, N R; Chenthamarakshan, C R; Yogeeswaran, G; Watcharenwong, A; de Zoysa, R S; Basit, N A; Rajeshwar, K

2006-12-21

The photoelectrochemical response of nanoporous films, obtained by anodization of Ti and W substrates in a variety of corrosive media and at preselected voltages in the range from 10 to 60 V, was studied. The as-deposited films were subjected to thermal anneal and characterized by scanning electron microscopy and X-ray diffraction. Along with the anodization media developed by previous authors, the effect of poly(ethylene glycol) (PEG 400) or D-mannitol as a modifier to the NH4F electrolyte and glycerol addition to the oxalic acid electrolyte was studied for TiO2 and WO3, respectively. In general, intermediate anodization voltages and film growth times yielded excellent-quality photoelectrochemical response for both TiO2 and WO3 as assessed by linear-sweep photovoltammetry and photoaction spectra. The photooxidation of water and formate species was used as reaction probes to assess the photoresponse quality of the nanoporous oxide semiconductor films. In the presence of formate as an electron donor, the incident photon to electron conversion efficiency (IPCE) ranged from approximately 130% to approximately 200% for both TiO2 and WO3 depending on the film preparation protocol. The best photoactive films were obtained from poly(ethylene glycol) (PEG 400) containing NH4F for TiO2 and from aqueous NaF for WO3.

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

NASA Astrophysics Data System (ADS)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (<30 sec), comparable with the annealing times necessary for dopant activation of p-GaN films and provides an opportunity for streamlining process flow. Plasma etching degrades contact quality on n-GaN films and this degradation has been found to increase with the rf bias levels (ion energies) used, most notably in films with higher doping levels. Immersion in 1:1 mixture of hydrochloric acid and de-ionized water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Development of optimization model for sputtering process parameter based on gravitational search algorithm

NASA Astrophysics Data System (ADS)

Norlina, M. S.; Diyana, M. S. Nor; Mazidah, P.; Rusop, M.

2016-07-01

In the RF magnetron sputtering process, the desirable layer properties are largely influenced by the process parameters and conditions. If the quality of the thin film has not reached up to its intended level, the experiments have to be repeated until the desirable quality has been met. This research is proposing Gravitational Search Algorithm (GSA) as the optimization model to reduce the time and cost to be spent in the thin film fabrication. The optimization model's engine has been developed using Java. The model is developed based on GSA concept, which is inspired by the Newtonian laws of gravity and motion. In this research, the model is expected to optimize four deposition parameters which are RF power, deposition time, oxygen flow rate and substrate temperature. The results have turned out to be promising and it could be concluded that the performance of the model is satisfying in this parameter optimization problem. Future work could compare GSA with other nature based algorithms and test them with various set of data.

Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

PubMed

Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

2015-08-05

Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO).

Understanding and Tailoring Grain Growth of Lead-Halide Perovskite for Solar Cell Application.

PubMed

Ma, Yongchao; Liu, Yanliang; Shin, Insoo; Hwang, In-Wook; Jung, Yun Kyung; Jeong, Jung Hyun; Park, Sung Heum; Kim, Kwang Ho

2017-10-04

The fundamental mechanism of grain growth evolution in the fabrication process from the precursor phase to the perovskite phase is not fully understood despite its importance in achieving high-quality grains in organic-inorganic hybrid perovskites, which are strongly affected by processing parameters. In this work, we investigate the fundamental conversion mechanism from the precursor phase of perovskite to the complete perovskite phase and how the intermediate phase promotes growth of the perovskite grains during the fabrication process. By monitoring the morphological evolution of the perovskite during the film fabrication process, we observed a clear rod-shaped intermediate phase in the highly crystalline perovskite and investigated the role of the nanorod intermediate phase on the growth of the grains of the perovskite film. Furthermore, on the basis of these findings, we developed a simple and effective method to tailor grain properties including the crystallinity, size, and number of grain boundaries, and then utilized the film with the tailored grains to develop perovskite solar cells.

Elegant Face-Down Liquid-Space-Restricted Deposition of CsPbBr3 Films for Efficient Carbon-Based All-Inorganic Planar Perovskite Solar Cells.

PubMed

Teng, Pengpeng; Han, Xiaopeng; Li, Jiawei; Xu, Ya; Kang, Lei; Wang, Yangrunqian; Yang, Ying; Yu, Tao

2018-03-21

It is a great challenge to obtain the uniform films of bromide-rich perovskites such as CsPbBr 3 in the two-step sequential solution process (two-step method), which was mainly due to the decomposition of the precursor films in solution. Herein, we demonstrated a novel and elegant face-down liquid-space-restricted deposition to inhibit the decomposition and fabricate high-quality CsPbBr 3 perovskite films. This method is highly reproducible, and the surface of the films was smooth and uniform with an average grain size of 860 nm. As a consequence, the planar perovskite solar cells (PSCs) without the hole-transport layer based on CsPbBr 3 and carbon electrodes exhibit enhanced power conversion efficiency (PCE) along with high open circuit voltage ( V OC ). The champion device has achieved a PCE of 5.86% with a V OC of 1.34 V, which to our knowledge is the highest performing CsPbBr 3 PSC in planar structure. Our results suggest an efficient and low-cost route to fabricate the high-quality planar all-inorganic PSCs.

Tunability of p- and n-channel TiOx thin film transistors.

PubMed

Peng, Wu-Chang; Chen, Yao-Ching; He, Ju-Liang; Ou, Sin-Liang; Horng, Ray-Hua; Wuu, Dong-Sing

2018-06-18

To acquire device-quality TiO x films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiO x even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiO x film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO 2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO 2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm 2 /Vs, while their on/off current ratios are 1.7 × 10 4 and 2.5 × 10 5 , respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiO x -based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

NASA Astrophysics Data System (ADS)

Gułkowski, Sławomir; Krawczak, Ewelina

2017-10-01

Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer

PubMed Central

2016-01-01

The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) foil, are systematically explored as a basis for an improved lift-off transfer. We show how intercalation processes allow the local Cu oxidation at the interface followed by selective oxide dissolution, which gently releases the 2D material (2DM) film. Interfacial composition change and selective dissolution can thereby be achieved in a single step or split into two individual process steps. We demonstrate that this method is not only highly versatile but also yields graphene and h-BN films of high quality regarding surface contamination, layer coherence, defects, and electronic properties, without requiring additional post-transfer annealing. We highlight how such transfers rely on targeted corrosion at the catalyst interface and discuss this in context of the wider CVD growth and 2DM transfer literature, thereby fostering an improved general understanding of widely used transfer processes, which is essential to numerous other applications. PMID:27934130

Laser processing of thin films for industrial packaging

NASA Astrophysics Data System (ADS)

Sozzi, Michele; Lutey, Adrian H. A.; Cucinotta, Annamaria; Selleri, Stefano; Molari, Pier Gabriele

2014-05-01

Single layer thin-film materials such as aluminum, polyethylene, polypropylene, and their multi-layer combinations such as aluminum-paper have been exposed to different laser radiation. A wide number of samples have been processed with 10 - 12.5 ns IR and Green, and 500 - 800 ps IR laser radiation at different translating speeds ranging from 50 mm/s to 1 m/s. High quality incisions have been obtained for all tested materials within the experimental conditions. The presented results provide the necessary parameters for an efficient cut and processing of the tested materials, for the employment of pulsed laser sources in the packaging industry, allowing the laser to prevail in lieu of more costly and energy intensive methods.

Fabrication of diamond shells

DOEpatents

Hamza, Alex V.; Biener, Juergen; Wild, Christoph; Woerner, Eckhard

2016-11-01

A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.

Trade-off between Photon Management Efficacy and Material Quality in Thin-Film Solar Cells on Nanostructured Substrates of High Aspect Ratio Structures

DOE PAGES

Chin, Alan; Keshavarz, Majid; Wang, Qi

2018-04-13

Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in themore » open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. Lastly, this observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.« less

Trade-off between Photon Management Efficacy and Material Quality in Thin-Film Solar Cells on Nanostructured Substrates of High Aspect Ratio Structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chin, Alan; Keshavarz, Majid; Wang, Qi

Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in themore » open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. Lastly, this observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.« less

Catalytic Palladium Film Deposited by Scalable Low-Temperature Aqueous Combustion.

PubMed

Voskanyan, Albert A; Li, Chi-Ying Vanessa; Chan, Kwong-Yu

2017-09-27

This article describes a novel method for depositing a dense, high quality palladium thin film via a one-step aqueous combustion process which can be easily scaled up. Film deposition of Pd from aqueous solutions by conventional chemical or electrochemical methods is inhibited by hydrogen embrittlement, thus resulting in a brittle palladium film. The method outlined in this work allows a direct aqueous solution deposition of a mirror-bright, durable Pd film on substrates including glass and glassy carbon. This simple procedure has many advantages including a very high deposition rate (>10 cm 2 min -1 ) and a relatively low deposition temperature (250 °C), which makes it suitable for large-scale industrial applications. Although preparation of various high-quality oxide films has been successfully accomplished via solution combustion synthesis (SCS) before, this article presents the first report on direct SCS production of a metallic film. The mechanism of Pd film formation is discussed with the identification of a complex formed between palladium nitrate and glycine at low temperature. The catalytic properties and stability of films are successfully tested in alcohol electrooxidation and electrochemical oxygen reduction reaction. It was observed that combustion deposited Pd film on a glassy carbon electrode showed excellent catalytic activity in ethanol oxidation without using any binder or additive. We also report for the first time the concept of a reusable "catalytic flask" as illustrated by the Suzuki-Miyaura cross-coupling reaction. The Pd film uniformly covers the inner walls of the flask and eliminates the catalyst separation step. We believe the innovative concept of a reusable catalytic flask is very promising and has the required features to become a commercial product in the future.

A new verification film system for routine quality control of radiation fields: Kodak EC-L.

PubMed

Hermann, A; Bratengeier, K; Priske, A; Flentje, M

2000-06-01

The use of modern irradiation techniques requires better verification films for determining set-up deviations and patient movements during the course of radiation treatment. This is an investigation of the image quality and time requirement of a new verification film system compared to a conventional portal film system. For conventional verifications we used Agfa Curix HT 1000 films which were compared to the new Kodak EC-L film system. 344 Agfa Curix HT 1000 and 381 Kodak EC-L portal films of different tumor sites (prostate, rectum, head and neck) were visually judged on a light box by 2 experienced physicians. Subjective judgement of image quality, masking of films and time requirement were checked. In this investigation 68% of 175 Kodak EC-L ap/pa-films were judged "good", only 18% were classified "moderate" or "poor" 14%, but only 22% of 173 conventional ap/pa verification films (Agfa Curix HT 1000) were judged to be "good". The image quality, detail perception and time required for film inspection of the new Kodak EC-L film system was significantly improved when compared with standard portal films. They could be read more accurately and the detection of set-up deviation was facilitated.

Effectiveness of plasma and radical control for the low temperature synthesis and properties of a-SiNx:H films using RF-near microwave PECVD

NASA Astrophysics Data System (ADS)

Sahu, Bibhuti Bhusan; Toyoda, Hirotaka; Han, Jeon Geon

2018-02-01

By mixing and alternating power conditions of radio frequency and microwave plasma sources, a detailed study of a-SiNx:H films in the SiH4/N2 plasma enhanced chemical vapour deposition processes is undertaken. Data reveal a remarkable coherence between the deposition conditions, material's quality, bond densities, optical property, and stoichiometry of the films. The film composition can simply vary from Si-rich to N-rich by incorporating suitable plasma and atomic radical parameters. Highly transparent and wide bandgap films with N to Si and N to H atomic ratios up to ˜2.3 and 3.1, respectively, are prepared by controlling the plasma parameters and radicals. The presented results pave the way for dual frequency PECVD utilization in a-SiNx:H films for their use in controlled-bandgap nanodevices and light emitting applications.

Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

DOEpatents

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

Flexible continuous manufacturing platforms for solid dispersion formulations

NASA Astrophysics Data System (ADS)

Karry-Rivera, Krizia Marie

In 2013 16,000 people died in the US due to overdose from prescription drugs and synthetic narcotics. As of that same year, 90% of new molecular entities in the pharmaceutical drug pipeline are classified as poor water-soluble. The work in this dissertation aims to design, develop and validate platforms that solubilize weak acids and can potentially deter drug abuse. These platforms are based on processing solid dispersions via solvent-casting and hot-melt extrusion methods to produce oral transmucosal films and melt tablets. To develop these platforms, nanocrystalline suspensions and glassy solutions were solvent-casted in the form of films after physicochemical characterizations of drug-excipient interactions and design of experiment approaches. A second order model was fitted to the emulsion diffusion process to predict average nanoparticle size and for process optimization. To further validate the manufacturing flexibility of the formulations, glassy solutions were also extruded and molded into tablets. This process included a systematic quality-by-design (QbD) approach that served to identify the factors affecting the critical quality attributes (CQAs) of the melt tablets. These products, due to their novelty, lack discriminatory performance tests that serve as predictors to their compliance and stability. Consequently, Process Analytical Technology (PAT) tools were integrated into the continuous manufacturing platform for films. Near-infrared (NIR) spectroscopy, including chemical imaging, combined with deconvolution algorithms were utilized for a holistic assessment of the effect of formulation and process variables on the product's CQAs. Biorelevant dissolution protocols were then established to improve the in-vivo in-vitro correlation of the oral transmucosal films. In conclusion, the work in this dissertation supports the delivery of poor-water soluble drugs in products that may deter abuse. Drug nanocrystals ensured high bioavailability, while glassy solutions enabled drug solubilization in polymer matrices. PAT tools helped in characterizing the micro and macro structure of the product while also used as a control strategy for manufacturing. The systematic QbD assessment enabled identification of the variables that significantly affected melt tablet performance and their potential as an abuse deterrent product. Being that these glassy products are novel systems, biorelevant protocols for testing dissolution performance of films were also developed.

Using a national archive of patient experience narratives to promote local patient-centered quality improvement: an ethnographic process evaluation of 'accelerated' experience-based co-design.

PubMed

Locock, Louise; Robert, Glenn; Boaz, Annette; Vougioukalou, Sonia; Shuldham, Caroline; Fielden, Jonathan; Ziebland, Sue; Gager, Melanie; Tollyfield, Ruth; Pearcey, John

2014-10-01

To evaluate an accelerated form of experience-based co-design (EBCD), a type of participatory action research in which patients and staff work together to improve quality; to observe how acceleration affected the process and outcomes of the intervention. An ethnographic process evaluation of an adapted form of EBCD was conducted, including observations, interviews, questionnaires and documentary analysis. Whilst retaining all components of EBCD, the adapted approach replaced local patient interviews with secondary analysis of a national archive of patient experience narratives to create national trigger films; shortened the timeframe; and employed local improvement facilitators. It was tested in intensive care and lung cancer in two English National Health Service (NHS) hospitals. A total of 96 clinical staff (primarily nursing and medical), and 63 patients and family members participated in co-design activities. The accelerated approach proved acceptable to staff and patients; using films of national rather than local narratives did not adversely affect local NHS staff engagement, and may have made the process less threatening or challenging. Local patients felt the national films generally reflected important themes although a minority felt they were more negative than their own experience. However, they served their purpose of 'triggering' discussion between patients and staff, and the resulting 48 co-design (improvement) activities across the four pathways were similar to those in EBCD, but achieved more quickly and at lower cost. Accelerated EBCD offers a rigorous and relatively cost-effective patient-centered quality improvement approach. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

NASA Astrophysics Data System (ADS)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Hydrophobic polymers for orodispersible films: a quality by design approach.

PubMed

Borges, Ana Filipa; Silva, Branca M A; Silva, Cláudia; Coelho, Jorge F J; Simões, Sérgio

2016-10-01

To develop orodispersible films (ODF) based on hydrophobic polymers with higher stability to ordinary environmental humidity conditions without compromising their fast disintegration time. A quality by design approach was applied to screen three different formulations each one based on a different hydrophobic polymer: polyvinyl acetate, methacrylate-based copolymer and shellac. The screening formulations were characterized regarding their mechanical properties, residual water content, disintegration time and appearance, in order to find a suitable ODF formulation according to established critical quality attributes. The selected critical process parameters for the selection of appropriate ODF formulations were the percentage of the different excipients and the plasticizer type. Three hydrophobic-based matrices with fast disintegration were developed. These were generically composed by a hydrophobic polymer, a stabilizer, a disintegrant and a plasticizer. It verified that the common components within the three different formulations behave differently depending on the system/chemical environment that they were included. It was shown that it is possible to develop oral films based on hydrophobic polymers with fast disintegration time, good texture and appearance, breaking a paradigm of the ODF research field.

Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2018-07-01

The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

Physics and chemistry in the process of hot-wire deposition of thin film silicon

NASA Astrophysics Data System (ADS)

Zheng, Wengang

Hotwire Chemical Vapor Deposition (CVD) has been used in preparing high quality low hydrogen content hydrogenated amorphous or polycrystalline silicon thin film in recent years. Comparing to the most commonly used glow discharge method, Hotwire CVD has the potential of high speed deposition avoiding the damage caused by ion bombardment associated with plasma. Although device quality thin films have been prepared by this method, and some empirical optimized deposition conditions have been established, the mechanisms controlling this technique are not clear. A homebuild threshold ionization mass spectrometer was constructed in this lab, allowing the radicals to be observed with high sensitivity. Hydrogen dissociation on the hot metal surface was studied first both by the direct detection of hydrogen atoms from the hot surface and the temperature change due to the hydrogen dissociation, it was confirmed that the activation energy of this process is around 2.25eV, the same as the dissociation in the gas phase. Further, we observed a first order dependence of hydrogen dissociation probability on the hydrogen pressure. This observation contradicts previously reported models of second order desorption. The monosilicon radicals Si and SiH3 were observed. It was observed that the silane decomposition on the hot surface is mainly a function of filament temperature, but the species released from that surface also depend on the surface condition, and thus on the silane exposure history of that piece of filament. Si is believed to deteriorate the film quality, by comparing the depleted silane and the Si flux, it is observed that Si experienced a lot of gas phase reactions before reaching the substrate, which leads to less reactive precursors. This observation is consistence with Molenbroek's study on the optimization of deposition condition. The dominant disilicon radical is identified as Si2H2, which in the form of lowest energy isomer, is suppose to be much less reactive than Si, and thus contributes to good quality thin film deposition. The corresponding Si insert reaction Si + SiH4 was also studied and an effective reaction coefficient of KSeff = 5 x 10-12( cm3/s was established.

Application of Oversampling to obtain the MTF of Digital Radiology Equipment.

NASA Astrophysics Data System (ADS)

Narváez, M.; Graffigna, J. P.; Gómez, M. E.; Romo, R.

2016-04-01

Within the objectives of theproject Medical Image Processing for QualityAssessment ofX Ray Imaging, the present research work is aimed at developinga phantomX ray image and itsassociated processing algorithms in order to evaluatethe image quality rendered by digital X ray equipment. These tools are used to measure various image parameters, among which spatial resolution shows afundamental property that can be characterized by the Modulation Transfer Function (MTF)of an imaging system [1]. After performing a thorough literature surveyon imaging quality control in digital X film in Argentine and international publications, it was decided to adopt for this work the Norm IEC 62220 1:2003 that recommends using an image edge as a testingmethod. In order to obtain the characterizing MTF, a protocol was designedfor unifying the conditions under which the images are acquired for later evaluation. The protocol implied acquiring a radiography image by means of a specific referential technique, i.e. referred either to voltage, current, time, distance focus plate (/film?) distance, or other referential parameter, and to interpret the image through a system of computed radiology or direct digital radiology. The contribution of the work stems from the fact that, even though the traditional way of evaluating an X film image quality has relied mostly on subjective methods, this work presents an objective evaluative toolfor the images obtained with a givenequipment, followed by a contrastive analysis with the renderings from other X filmimaging sets.Once the images were obtained, specific calculations were carried out. Though there exist some methods based on the subjective evaluation of the quality of image, this work offers an objective evaluation of the equipment under study. Finally, we present the results obtained on different equipment.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

DOE PAGES

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; ...

2018-03-12

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms themore » slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h -1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.« less

Film analysis employing subtarget effect using 355 nm Nd-YAG laser-induced plasma at low pressure

NASA Astrophysics Data System (ADS)

Hedwig, Rinda; Budi, Wahyu Setia; Abdulmadjid, Syahrun Nur; Pardede, Marincan; Suliyanti, Maria Margaretha; Lie, Tjung Jie; Kurniawan, Davy Putra; Kurniawan, Koo Hendrik; Kagawa, Kiichiro; Tjia, May On

2006-12-01

The applicability of spectrochemical analysis for liquid and powder samples of minute amount in the form of thin film was investigated using ultraviolet Nd-YAG laser (355 nm) and low-pressure ambient air. A variety of organic samples such as commercial black ink usually used for stamp pad, ginseng extract, human blood, liquid milk and ginseng powder was prepared as film deposited on the surface of an appropriate hard substrate such as copper plate or glass slide. It was demonstrated that in all cases studied, good quality spectra were obtained with very low background and free from undesirable contamination by the substrate elements, featuring ppm or even sub-ppm sensitivity and worthy of application for quantitative analysis of organic samples. The proper preparation of the films was found to be crucial in achieving the high quality spectra. It was further shown that much inferior results were obtained when the atmospheric-pressure (101 kPa) operating condition of laser-induced breakdown spectroscopy or the fundamental wavelength of the Nd-YAG laser was employed due to the excessive or improper laser ablation process.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms themore » slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h -1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.« less

Antimicrobial edible films and coatings for meat and meat products preservation.

PubMed

Sánchez-Ortega, Irais; García-Almendárez, Blanca E; Santos-López, Eva María; Amaro-Reyes, Aldo; Barboza-Corona, J Eleazar; Regalado, Carlos

2014-01-01

Animal origin foods are widely distributed and consumed around the world due to their high nutrients availability but may also provide a suitable environment for growth of pathogenic and spoilage microorganisms. Nowadays consumers demand high quality food with an extended shelf life without chemical additives. Edible films and coatings (EFC) added with natural antimicrobials are a promising preservation technology for raw and processed meats because they provide good barrier against spoilage and pathogenic microorganisms. This review gathers updated research reported over the last ten years related to antimicrobial EFC applied to meat and meat products. In addition, the films gas barrier properties contribute to extended shelf life because physicochemical changes, such as color, texture, and moisture, may be significantly minimized. The effectiveness showed by different types of antimicrobial EFC depends on meat source, polymer used, film barrier properties, target microorganism, antimicrobial substance properties, and storage conditions. The perspective of this technology includes tailoring of coating procedures to meet industry requirements and shelf life increase of meat and meat products to ensure quality and safety without changes in sensory characteristics.

Antimicrobial Edible Films and Coatings for Meat and Meat Products Preservation

PubMed Central

Sánchez-Ortega, Irais; García-Almendárez, Blanca E.; Santos-López, Eva María; Amaro-Reyes, Aldo; Barboza-Corona, J. Eleazar; Regalado, Carlos

2014-01-01

Animal origin foods are widely distributed and consumed around the world due to their high nutrients availability but may also provide a suitable environment for growth of pathogenic and spoilage microorganisms. Nowadays consumers demand high quality food with an extended shelf life without chemical additives. Edible films and coatings (EFC) added with natural antimicrobials are a promising preservation technology for raw and processed meats because they provide good barrier against spoilage and pathogenic microorganisms. This review gathers updated research reported over the last ten years related to antimicrobial EFC applied to meat and meat products. In addition, the films gas barrier properties contribute to extended shelf life because physicochemical changes, such as color, texture, and moisture, may be significantly minimized. The effectiveness showed by different types of antimicrobial EFC depends on meat source, polymer used, film barrier properties, target microorganism, antimicrobial substance properties, and storage conditions. The perspective of this technology includes tailoring of coating procedures to meet industry requirements and shelf life increase of meat and meat products to ensure quality and safety without changes in sensory characteristics. PMID:25050387

A calibration method for patient specific IMRT QA using a single therapy verification film

PubMed Central

Shukla, Arvind Kumar; Oinam, Arun S.; Kumar, Sanjeev; Sandhu, I.S.; Sharma, S.C.

2013-01-01

Aim The aim of the present study is to develop and verify the single film calibration procedure used in intensity-modulated radiation therapy (IMRT) quality assurance. Background Radiographic films have been regularly used in routine commissioning of treatment modalities and verification of treatment planning system (TPS). The radiation dosimetery based on radiographic films has ability to give absolute two-dimension dose distribution and prefer for the IMRT quality assurance. However, the single therapy verification film gives a quick and significant reliable method for IMRT verification. Materials and methods A single extended dose rate (EDR 2) film was used to generate the sensitometric curve of film optical density and radiation dose. EDR 2 film was exposed with nine 6 cm × 6 cm fields of 6 MV photon beam obtained from a medical linear accelerator at 5-cm depth in solid water phantom. The nine regions of single film were exposed with radiation doses raging from 10 to 362 cGy. The actual dose measurements inside the field regions were performed using 0.6 cm3 ionization chamber. The exposed film was processed after irradiation using a VIDAR film scanner and the value of optical density was noted for each region. Ten IMRT plans of head and neck carcinoma were used for verification using a dynamic IMRT technique, and evaluated using the gamma index method with TPS calculated dose distribution. Results Sensitometric curve has been generated using a single film exposed at nine field region to check quantitative dose verifications of IMRT treatments. The radiation scattered factor was observed to decrease exponentially with the increase in the distance from the centre of each field region. The IMRT plans based on calibration curve were verified using the gamma index method and found to be within acceptable criteria. Conclusion The single film method proved to be superior to the traditional calibration method and produce fast daily film calibration for highly accurate IMRT verification. PMID:24416558

Alkali Metal Doping for Improved CH3NH3PbI3 Perovskite Solar Cells.

PubMed

Zhao, Wangen; Yao, Zhun; Yu, Fengyang; Yang, Dong; Liu, Shengzhong Frank

2018-02-01

Organic-inorganic hybrid halide perovskites are proven to be a promising semiconductor material as the absorber layer of solar cells. However, the perovskite films always suffer from nonuniform coverage or high trap state density due to the polycrystalline characteristics, which degrade the photoelectric properties of thin films. Herein, the alkali metal ions which are stable against oxidation and reduction are used in the perovskite precursor solution to induce the process of crystallization and nucleation, then affect the properties of the perovskite film. It is found that the addition of the alkali metal ions clearly improves the quality of perovskite film: enlarges the grain sizes, reduces the defect state density, passivates the grain boundaries, increases the built-in potential ( V bi ), resulting to the enhancement in the power conversion efficiency of perovskite thin film solar cell.

High performance YBCO films. Report for 1 August-31 October 1992

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denlinger, E.J.; Fathy, A.; Kalokitis, D.

1992-10-31

The objective of this program is to identify suitable low loss, low dielectric constant substrates and develop and optimize deposition processes for high quality YBCO films including the necessary buffer layers. Ultimate goals are large area substrates having double-sided HTS coating with a surface resistance ten times lower than copper at 40 GHz. High quality HTS films on low dielectric constant substrates are expected to find widespread use in advanced millimeter wave components, in extending the power handling capability of microwave and millimeter wave circuitry, and in facilitating high speed computer interconnects. Sample demonstration circuits will be built toward themore » end of the program. We have successfully deposited a high quality YBCO film on a good low loss and low dielectric constant substrate, magnesium fluoride (e=5). With the use of two buffer layers (magnesium oxide and strontium titanate) between the YBCO and the substrate, transition temperatures of 89 deg K and transition widths of about 0.5 deg K were achieved. The critical current density Jc of 4 x 10 6 A/cm2 at 77K in zero field is among the highest reported for YBCO films. The magnesium fluoride (MgF2) substrate has a tetragonal structure with a dielectric constant of 5.2 in the plane of the substrate and 4.6 perpendicular to the substrate surface. It has a good harness (-575 Knoop) and a linear thermal expansion coefficient that closely matches YBCO and the buffer layers.« less

America on Film: A Humanities Composition Course.

ERIC Educational Resources Information Center

Recchia, Edward

This paper argues that film courses are useful because they sensitize students both to the artistic qualities of film expression and to equivalent qualities in other forms of expression. The objectives of a film course at Michigan State University are: to develop the students' knowledge of the film medium and through that knowledge develop a…

Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)

NASA Astrophysics Data System (ADS)

Racah, Daniel

1991-03-01

Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.

Strategies to improve the mechanical strength and water resistance of agar films for food packaging applications.

PubMed

Sousa, Ana M M; Gonçalves, Maria P

2015-11-05

Agar films possess several properties adequate for food packaging applications. However, their high cost-production and quality variations caused by physiological and environmental factors affecting wild seaweeds make them less attractive for industries. In this work, native (NA) and alkali-modified (AA) agars obtained from sustainably grown seaweeds (integrated multi-trophic aquaculture) were mixed with locust bean gum (LBG) to make 'knife-coated' films with fixed final concentration (1 wt%) and variable agar/LBG ratios. Agar films were easier to process upon LBG addition (viscosity increase and gelling character decrease of the film-forming solutions observed by dynamic oscillatory and steady shear measurements). The mechanical properties and water resistance were optimal for films with 50 and/or 75% LBG contents and best in the case of NA (cheaper to extract). These findings can help reduce the cost-production of agar packaging films. Moreover, the controlled cultivation of seaweeds can provide continuous and reliable feedstock for transformation industries. Copyright © 2015 Elsevier Ltd. All rights reserved.

Multiresonant layered plasmonic films

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVetter, Brent M.; Bernacki, Bruce E.; Bennett, Wendy D.

Multi-resonant nanoplasmonic films have numerous applications in areas such as nonlinear optics, sensing, and tamper indication. While techniques such as focused ion beam milling and electron beam lithography can produce high-quality multi-resonant films, these techniques are expensive, serial processes that are difficult to scale at the manufacturing level. Here, we present the fabrication of multi-resonant nanoplasmonic films using a layered stacking technique. Periodically-spaced gold nanocup substrates were fabricated using self-assembled polystyrene nanospheres followed by oxygen plasma etching and metal deposition via magnetron sputter coating. By adjusting etch parameters and initial nanosphere size, it was possible to achieve an optical responsemore » ranging from the visible to the near-infrared. Singly resonant, flexible films were first made by performing peel-off using an adhesive-coated polyolefin film. Through stacking layers of the nanofilm, we demonstrate fabrication of multi-resonant films at a fraction of the cost and effort as compared to top-down lithographic techniques.« less

Exceptional Morphology-Preserving Evolution of Formamidinium Lead Triiodide Perovskite Thin Films via Organic-Cation Displacement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yuanyuan; Yang, Mengjin; Pang, Shuping

Here we demonstrate a radically different chemical route for the creation of HC(NH2)2PbI3 (FAPbI3) perovskite thin films. This approach entails a simple exposure of as-synthesized CH3NH3PbI3 (MAPbI3) perovskite thin films to HC(=NH)NH2 (formamidine or FA) gas at 150 degrees C, which leads to rapid displacement of the MA+ cations by FA+ cations in the perovskite structure. The resultant FAPbI3 perovskite thin films preserve the microstructural morphology of the original MAPbI3 thin films exceptionally well. Importantly, the myriad processing innovations that have led to the creation of high-quality MAPbI3 perovskite thin films are directly adaptable to FAPbI3 through this simple, rapidmore » chemical-conversion route. Accordingly, we show that efficiencies of perovskite solar cells fabricated with FAPbI3 thin films created using this route can reach -18%.« less

Driving down defect density in composite EUV patterning film stacks

NASA Astrophysics Data System (ADS)

Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

2017-03-01

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Changes in physiological and some nutritional, nutraceuticals, chemical-physical, microbiological and sensory quality of minimally processed cactus pears cvs 'Bianca', 'Gialla' and 'Rossa' stored under passive modified atmosphere.

PubMed

Palma, Amedeo; Continella, Alberto; La Malfa, Stefano; D'Aquino, Salvatore

2018-03-01

The objective of this study was to compare the overall quality changes of minimally processed cactus pears cvs 'Bianca', Gialla' and 'Rossa' stored at 4 °C for 10 days. Periodically in-package CO 2 , O 2 and C 2 H 4 were determined and fruit were assessed for overall quality changes (pH, acidity, sugars, phenolics, betacyanins and betaxanthines, antioxidant capacity, colour, firmness, microbiological population and sensory attributes). In a preliminary study three different polymeric films were tested to select the most suitable to design a package with a short lag time to achieve steady-state conditions. Results showed marked differences between measured in-package CO 2 and O 2 values and those calculated based on respiration of peeled fruit and film permeance to CO 2 and O 2 provided by manufactures. The sensory evaluation of packed fruit indicated in film BBT-Bolphane, which created a steady-state in-package partial pressure for CO 2 of 4.3-4.8 kPa and for O 2 of 4.8-5.5 kPa, as the best film. Results of in-package gas composition with the three cultivars were similar to those achieved in cv. 'Gialla' with the preliminary test. All measured qualitative parameters changed slightly over the storage period for all cultivars and followed the same trend, despite significant differences existing among cultivars. This study clearly showed a similar physiological behavior of minimally processed 'Bianca', 'Gialla' and 'Rossa' cactus pears. Storage conditions optimal for one cultivar fit well for the others; thus mixing fruit of different cultivars in a package designed for one specific cultivar does not lead to relevant deviation from expected results. © 2017 Society of Chemical Industry. © 2017 Society of Chemical Industry.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Quality changes of 'Sanguinello' oranges wrapped with different plastic films under simulated marketing conditions.

PubMed

D'Aquino, S; Malinconico, M; Avella, M; Di Lorenzo, M L; Mura; Palma, A

2013-01-01

Chemical and eating quality of citrus fruit changes slowly after harvest, and quality alteration is mainly due to shrinkage, loss of firmness, excessive weight loss and decay rather than a reduction of nutritional value and taste features. Film wrapping may be a suitable means to reduce transpiration and preserve market quality provided film permeability to gases does not lead to: 1) a reduction of in-package O2 partial pressure at a point that would induce anaerobic respiration; 2) an increase of CO2 concentration to toxic levels. This experiment was carried out to study quality changes of 'Sanguinello' oranges treated or not treated with 500 mg/L imazalil (IMZ) and wrapped with continuous, macro- or micro-perforated polyolefinic films. Wrapped and no-wrapped fruit were stored at 20 degrees C and 60% RH for 20 or 30 days. In-package gas composition of the macro-perforated film showed no significant difference compared to air composition, while in-package partial pressure of CO2 and O2 ranged between 4 (continuous film) and 9.8 kPa (micro-perforated films), and 14.8 (continuous film) and 5 kPa (micro-perforated films), respectively. After 30 days of storage weight loss in fruit wrapped with the macro-perforated film was (4.3%) slightly lowerthan un-packed fruit (5%), while in all other packages weight loss never exceeded 0.7%.Quality changes were quite stable over storage in all treatments, although slight but significantly lower levels of total soluble solids and ascorbic acid were detected in micro-perforated films with the lowest degree of perforation. However, the sensory analysis denoted a remarkable decrease of firmness in un-wrapped or wrapped fruit with macro-perforated film, while a moderate build-up of off-flavour, which reduced the eating quality, developed in micro-perforated films. Decay ranged between 6 and 12% in not treated fruit, with the lowest incidence detected in un-wrapped fruit, whereas differences among the different films were not significant. No decay was detected in fruit treated with IMZ. 'Sanguinello' oranges can be stored under retail conditions for a month by the only means of film wrapping without important changes in chemical, eating and marketing quality provided fruit are treated with an effective fungicide to prevent decay and that in-package gas composition is not markedly changed with respect to air.

Use of space ultra-vacuum for high quality semiconductor thin film growth

NASA Technical Reports Server (NTRS)

Ignatiev, A.; Sterling, M.; Sega, R. M.

1992-01-01

The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.

Investigation of MgF2 optical thin films with ultralow refractive indices prepared from autoclaved sols.

PubMed

Murata, Tsuyoshi; Ishizawa, Hitoshi; Tanaka, Akira

2008-05-01

We have successfully developed a process to form high quality MgF(2) thin films with ultralow refractive indices from autoclaved sols prepared from magnesium acetate and hydrofluoric acid. And we have confirmed that our porous MgF(2) coatings have not only high transmittance in the UV region but also high uniformity of film thickness. They can be uniformly formed on phiv 300 mm substrates as a single coating and as a hybrid coating with sublayers formed by physical vapor deposition. They are expected to be applied to various optics that need high transmittance in the UV region.

An audit of rejected repeated x-ray films as a quality assurance element in a radiology department.

PubMed

Eze, K C; Omodia, N; Okegbunam, B; Adewonyi, T; Nzotta, C C

2008-12-01

To find out the causes, number, percentage and sizes of rejected radiographic films with a view of adopting measures that will reduce the rate and number of rejected films. Radiology Department of a University Teaching Hospital. Over a two-year period (1st April 2002 to 31st March 2004), the total number of x-ray films utilized for radiographic examinations, rejected films and sizes of rejected films were collected retrospectively from the medical record of radiology department. All the rejected films were viewed by a radiologist and three radiographers for the causes of the rejects which was arrived at by consensus. The data was analysed. A total of 15,095 films were used in the study period and 1,338 films (8.86%) were rejected or wasted. The rate of rejected films varied from 7.69% to 13.82% with average of 8.86%. The greatest cause of film rejects was radiographers' faults 547 (40.88%), followed by equipments faults 255 (19.06%), and patients' faults 250 (18.90%). The highest reject rate (13.82%) was for films used for examination of the spine (15 x 30) cm size. This is followed by 9.92% for skull (18 x 24) cm films and 8.83% for small sized films (24 x 30) cm used for paediatric patients. Of a total of 1,338 rejected films, 1276 (95.37%) additional exposure were done to obtain the basic desired diagnostic information involving 1151 patients; 885 (76.89%) of these patients needed at least one additional hospital visit to take the repeat exposure. Rejected films are not billable; patients receive additional radiation and may even come to hospital in another day for the repeat. Radiographer's work is increased as well as that of the support staff. The waiting room may be congested and waiting time increased. The cost of processing chemical and films are increased, thus if work is quantified in monetary terms, the cost of repeats is high. Rejected-repeated film analysis is cheap, simple, practicable, easy to interpret and an effective indictor of quality assurance of radiology departments.

Effects of tear film dynamics on quality of vision.

PubMed

Koh, Shizuka; Tung, Cynthia I; Inoue, Yasushi; Jhanji, Vishal

2018-06-15

The precorneal tear film is maintained by blinking and exhibits different phases in the tear cycle. The tear film serves as the most anterior surface of the eye and plays an important role as a first refractive component of the eye. Alterations in tear film dynamics may cause both vision-related and ocular surface-related symptoms. Although the optical quality associated with the tear film dynamics previously received little attention, objective measurements of optical quality using wavefront sensors have enabled us to quantify optical aberrations induced by the tear film. This has provided an objective method for assessing reduced optical quality in dry eye; thus, visual disturbances were included in the definition of dry eye disease in the 2007 Dry Eye Workshop report. In addition, sequential measurements of wavefront aberrations have provided us with valuable insights into the dynamic optical changes associated with tear film dynamics. This review will focus on the current knowledge of the mechanisms of wavefront variations that are caused by different aspects of tear film dynamics: specifically, quality, quantity and properties of the tear film, demonstrating the respective effects of dry eye, epiphora and instillation of eye drops on the quality of vision. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2018. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Densitometric evaluation of three intra-oral radiographic films.

PubMed

Seeliger, J E; Prinsloo, J J

1989-05-01

The radiographic, or diagnostic, quality of the processed radiograph depends upon a number of factors, one of the most important being the characteristics of the film. The purpose of this study was to determine which of three intra-oral radiographic films, obtainable in this country, would give the best results in terms of density range, speed, contrast and base plus fog values. Agfa Dentus, Flow X-Ray and Kodak (all speed group D films) were exposed, using a calibrated G.E. 1000 x-ray generator at 65 kVp, 10 mA and 50 impulses (1 second) exposure time. The target-film-distance was 40 cm, the total filtration 2.0 mm Aluminium and the half-value layer 2.7 mm Aluminium equivalent. An aluminium step-wedge with 8 steps, in steps of 1.5 mm, and a natural premolar tooth, with a carious lesion, embedded in acrylic, were used as phantoms. An 8 mm-thick layer of base-plate wax and a 3 mm-thick lead plate were used to simulate tissue-scatter and prevent back-scatter, respectively. To determine the base plug fog value, an unexposed film from the same batch was processed simultaneously with each of the three films evaluated. All processing was done in a Dürr AC 245 L processor with automatic replenishment and a 6-minute cycle. The processing chemicals, viz., Kolchem High Stability X-ray developer and fixer, were mixed and used in strict accordance with the manufacturer's recommendations. The radiographic densities of each step of the step-wedge, and of carious and normal dentine of the phantom tooth, were determined by means of an RMI Digital Densitometer.(ABSTRACT TRUNCATED AT 250 WORDS)

The influence of boron doping level on quality and stability of diamond film on Ti substrate

NASA Astrophysics Data System (ADS)

Wei, J. J.; Li, Ch. M.; Gao, X. H.; Hei, L. F.; Lvun, F. X.

2012-07-01

In this study, we investigate the influence of boron doping level on film quality and stability of boron doped diamond (BDD) film deposited on titanium substrate (Ti/BDD) using microwave plasma chemical vapor deposition system. The results demonstrate that high boron concentration will improve the film conductivity, whereas the diamond film quality and adhesion are deteriorated obviously. The increase of total internal stress in the film and the variation of components within the interlayer will weaken the coating adhesion. According to the analysis of electrode inactivation mechanism, high boron doping level will be harmful to the electrode stability in the view of diamond quality and adhesion deterioration. In this study, 5000 ppm B/C ratio in the reaction gas is optimized for Ti/BDD electrode preparation.

Document Preparation (for Filming). ERIC Processing Manual, Appendix B.

ERIC Educational Resources Information Center

Brandhorst, Ted, Ed.; And Others

The technical report or "fugitive" literature collected by ERIC is produced using a wide variety of printing techniques, many formats, and variable degrees of quality control. Since the documents processed by ERIC go on to be microfilmed and reproduced in microfiche and paper copy for sale to users, it is essential that the ERIC document…

36 CFR 1237.26 - What materials and processes must agencies use to create audiovisual records?

Code of Federal Regulations, 2011 CFR

2011-07-01

...) If using reversal type processing, require full photographic reversal; i.e., develop, bleach, expose...-digital or scanned digital images that are scheduled as permanent or unscheduled, a record (or master) version of each image must be comparable in quality to a 35 mm film photograph or better, and must be...

36 CFR 1237.26 - What materials and processes must agencies use to create audiovisual records?

Code of Federal Regulations, 2010 CFR

2010-07-01

...) If using reversal type processing, require full photographic reversal; i.e., develop, bleach, expose...-digital or scanned digital images that are scheduled as permanent or unscheduled, a record (or master) version of each image must be comparable in quality to a 35 mm film photograph or better, and must be...

36 CFR § 1237.26 - What materials and processes must agencies use to create audiovisual records?

Code of Federal Regulations, 2013 CFR

2013-07-01

... recommendations. (3) If using reversal type processing, require full photographic reversal; i.e., develop, bleach...-digital or scanned digital images that are scheduled as permanent or unscheduled, a record (or master) version of each image must be comparable in quality to a 35 mm film photograph or better, and must be...

36 CFR 1237.26 - What materials and processes must agencies use to create audiovisual records?

Code of Federal Regulations, 2012 CFR

2012-07-01

...) If using reversal type processing, require full photographic reversal; i.e., develop, bleach, expose...-digital or scanned digital images that are scheduled as permanent or unscheduled, a record (or master) version of each image must be comparable in quality to a 35 mm film photograph or better, and must be...

36 CFR 1237.26 - What materials and processes must agencies use to create audiovisual records?

Code of Federal Regulations, 2014 CFR

2014-07-01

...) If using reversal type processing, require full photographic reversal; i.e., develop, bleach, expose...-digital or scanned digital images that are scheduled as permanent or unscheduled, a record (or master) version of each image must be comparable in quality to a 35 mm film photograph or better, and must be...

Suspension chemistry and electrophoretic deposition of zirconia electrolyte on conducting and non-conducting substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Debasish; Basu, Rajendra N., E-mail: rnbasu@cgcri.res.in

2013-09-01

Graphical abstract: - Highlights: • Stable suspension of yttria stabilized zirconia (YSZ) obtained in isopropanol medium. • Suspension chemistry and process parameters for electrophoretic deposition optimized. • Deposited film quality changed with iodine and water (dispersants) concentration. • Dense YSZ film (∼5 μm) fabricated onto non-conducting porous NiO-YSZ anode substrate. - Abstract: Suspensions of 8 mol% yttria stabilized zirconia (YSZ) particulates in isopropanol medium are prepared using acetylacetone, iodine and water as dispersants. The effect of dispersants concentration on suspension stability, particle size distribution, electrical conductivity and pH of the suspensions are studied in detail to optimize the suspension chemistry.more » Electrophoretic deposition (EPD) has been conducted to produce thin and dense YSZ electrolyte films. Deposition kinetics have been studied in depth and good quality films on conducting substrate are obtained at an applied voltage of 15 V for 3 min. YSZ films are also fabricated on non-conducting NiO-YSZ anode substrate using a steel plate on the reverse side of the substrate. Upon co-firing at 1400 °C for 6 h a dense YSZ film of thickness ∼5 μm is obtained. Such a half cell (anode + electrolyte) can be used to fabricate a solid oxide fuel cell on applying a suitable cathode layer.« less

75 FR 59180 - Approval and Promulgation of Air Quality Implementation Plans; Maryland; Control Technique...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-09-27

... Promulgation of Air Quality Implementation Plans; Maryland; Control Technique Guidelines for Paper, Film, and... Technique Guidelines (CTG) for paper, film, and foil coatings. These amendments will reduce volatile organic... Promulgation of Air Quality Implementation Plans; Maryland; Control Technique Guidelines for Paper, Film, and...

Predictive Model for the Meniscus-Guided Coating of High-Quality Organic Single-Crystalline Thin Films.

PubMed

Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2016-09-01

A model that describes solvent evaporation dynamics in meniscus-guided coating techniques is developed. In combination with a single fitting parameter, it is shown that this formula can accurately predict a processing window for various coating conditions. Organic thin-film transistors (OTFTs), fabricated by a zone-casting setup, indeed show the best performance at the predicted coating speeds with mobilities reaching 7 cm 2 V -1 s -1 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seacrist, Michael

The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of highmore » quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template. However, the presence of both Ga and N at the growth surface indicates that the reactor hardware physics is all functioning properly; achieving film growth is a matter of controlling the chemistry at the interface. The impurities originating from the hardware are expected to be straightforward to eliminate. Activities were defined for an extension of budget period 1 to eliminate the undesired impurities originating from the reactor hardware and interfering with crystalline GaN film growth. The budget period 1 extension was negotiated during the 1st half of 2014. The budget period 1 extension spanned approximately from August 2014 to August 2015. The project objective for this extension period was to demonstrate at least 0.5um crystalline GaN film on a GaN seed in the lab scale reactor. The focus of the budget 1 extension period from August 2014 to August 2015 was to eliminate oxygen contamination interference with GaN film growth. The team procured the highest purity lowest oxygen salt for testing. Low oxygen crucible materials such as silicon carbide were installed and evaluated in the laboratory reactor. Growth experiments were performed with high purity salt, high purity hardware, and optimized oxide removal from the seed surface. Experiments were characterized with methods including UV inspection, profilometry, x-ray diffraction (XRD) to determine crystalline structure, optical and scanning electron microscopy, photoluminescence, x-ray photon spectroscopy (XPS), transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). Despite successfully integrating the low oxygen materials in the laboratory reactor, the goal of depositing 0.5um of crystalline GaN on the MOCVD GaN seed was not met. Very thin (ca. 10nm) cubic phase GaN deposition was observed on the hexagonal MOCVD GaN seeds. But there was a competing etching reaction which was also observed and thought to be related to the presence of metallic lithium, a byproduct of the LiCl-KCl salt used as the process medium. The etching reaction could potentially be addressed by alternate salts not containing lithium, but would necessitate starting all over on the reactor and process design. Further, controlling the reaction of Ga and N in the bulk salt to favor deposition on the seed has proved to be very difficult and unlikely to be solved within the scope of this project in a manner consistent with the original objective for wafer or crystal scale thickness for GaN deposition on a GaN seed. Upon completion of the budget 1 extension period in August 2015 the project partners and DOE agreed to stop work on the project.« less

Advances in edible coatings for fresh fruits and vegetables: a review.

PubMed

Dhall, R K

2013-01-01

Edible coatings are an environmentally friendly technology that is applied on many products to control moisture transfer, gas exchange or oxidation processes. Edible coatings can provide an additional protective coating to produce and can also give the same effect as modified atmosphere storage in modifying internal gas composition. One major advantage of using edible films and coatings is that several active ingredients can be incorporated into the polymer matrix and consumed with the food, thus enhancing safety or even nutritional and sensory attributes. But, in some cases, edible coatings were not successful. The success of edible coatings for fresh products totally depends on the control of internal gas composition. Quality criteria for fruits and vegetables coated with edible films must be determined carefully and the quality parameters must be monitored throughout the storage period. Color change, firmness loss, ethanol fermentation, decay ratio and weight loss of edible film coated fruits need to be monitored. This review discusses the use of different edible coatings (polysaccharides, proteins, lipids and composite) as carriers of functional ingredients on fresh fruits and vegetables to maximize their quality and shelf life. This also includes the recent advances in the incorporation of antimicrobials, texture enhancers and nutraceuticals to improve quality and functionality of fresh-cut fruits. Sensory implications, regulatory status and future trends are also reviewed.

Selective rear side ablation of thin nickel-chromium-alloy films using ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Pabst, Linda; Ullmann, Frank; Ebert, Robby; Exner, Horst

2018-03-01

In recent years, the selective laser structuring from the transparent substrate side plays an increased role in thin film processing. The rear side ablation is a highly effective ablation method for thin film structuring and revels a high structuring quality. Therefore, the rear side ablation of nickel-chromium-alloy thin films on glass substrate was investigated using femtosecond laser irradiation. Single and multiple pulses ablation thresholds as well as the incubation coefficient were determined. By irradiation from the transparent substrate side at low fluences a cracking or a partly delamination of the film could be observed. By increasing the fluence the most part of the film was ablated, however, a very thin film remained at the interface of the glass substrate. This thin remaining layer could be completely ablated by two pulses. A further increase of the pulse number had no influence on the ablation morphology. The ablated film was still intact and an entire disc or fragments could be collected near the ablation area. The fragments showed no morphology change and were still in solid state.

Copper indium gallium selenide (CIGS) photovoltaic devices made using multistep selenization of nanocrystal films.

PubMed

Harvey, Taylor B; Mori, Isao; Stolle, C Jackson; Bogart, Timothy D; Ostrowski, David P; Glaz, Micah S; Du, Jiang; Pernik, Douglas R; Akhavan, Vahid A; Kesrouani, Hady; Vanden Bout, David A; Korgel, Brian A

2013-09-25

The power conversion efficiency of photovoltaic devices made with ink-deposited Cu(InxGa1-x)Se2 (CIGS) nanocrystal layers can be enhanced by sintering the nanocrystals with a high temperature selenization process. This process, however, can be challenging to control. Here, we report that ink deposition followed by annealing under inert gas and then selenization can provide better control over CIGS nanocrystal sintering and yield generally improved device efficiency. Annealing under argon at 525 °C removes organic ligands and diffuses sodium from the underlying soda lime glass into the Mo back contact to improve the rate and quality of nanocrystal sintering during selenization at 500 °C. Shorter selenization time alleviates excessive MoSe2 formation at the Mo back contact that leads to film delamination, which in turn enables multiple cycles of nanocrystal deposition and selenization to create thicker, more uniform absorber films. Devices with power conversion efficiency greater than 7% are fabricated using the multiple step nanocrystal deposition and sintering process.

Control of PbI2 nucleation and crystallization: towards efficient perovskite solar cells based on vapor-assisted solution process

NASA Astrophysics Data System (ADS)

Yang, Chongqiu; Peng, Yanke; Simon, Terrence; Cui, Tianhong

2018-04-01

Perovskite solar cells (PSC) have outstanding potential to be low-cost, high-efficiency photovoltaic devices. The PSC can be fabricated by numerous techniques; however, the power conversion efficiency (PCE) for the two-step-processed PSC falls behind that of the one-step method. In this work, we investigate the effects of relative humidity (RH) and dry air flow on the lead iodide (PbI2) solution deposition process. We conclude that the quality of the PbI2 film is critical to the development of the perovskite film and the performance of the PSC device. Low RH and dry air flow used during the PbI2 spin coating procedure can increase supersaturation concentration to form denser PbI2 nuclei and a more suitable PbI2 film. Moreover, airflow-assisted PbI2 drying and thermal annealing steps can smooth transformation from the nucleation stage to the crystallization stage.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method.

PubMed

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-03

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe₂ absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe₂ precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe₂ absorber layers. After spraying on Mo/glass substrates, the CuInSe₂ thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N₂ as atmosphere. When the CuInSe₂ thin films were annealed, without extra Se or H₂Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe₂ absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe₂ absorber layers could be controlled as the volume of used dispersed CuInSe₂-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe₂ absorber layers obtained by the Spray Coating Method.

Ultrasmooth Quantum Dot Micropatterns by a Facile Controllable Liquid-Transfer Approach: Low-Cost Fabrication of High-Performance QLED.

PubMed

Zhang, Min; Hu, Binbin; Meng, Lili; Bian, Ruixin; Wang, Siyuan; Wang, Yunjun; Liu, Huan; Jiang, Lei

2018-06-26

Fabrication of a high quality quantum dot (QD) film is essentially important for a high-performance QD light emitting diode display (QLED) device. It is normally a high-cost and multiple-step solution-transfer process where large amounts of QDs were needed but with only limited usefulness. Thus, developing a simple, efficient, and low-cost approach to fabricate high-quality micropatterned QD film is urgently needed. Here, we proposed that the Chinese brush enables the controllable transfer of a QD solution directly onto a homogeneous and ultrasmooth micropatterned film in one step. It is proposed that the dynamic balance of QDs was enabled during the entire solution transfer process under the cooperative effect of Marangoni flow aroused by the asymmetric solvent evaporation and the Laplace pressure different by conical fibers. By this approach, QD nanoparticles were homogeneously transferred onto the desired area on the substrate. The as-prepared QLED devices show rather high performances with the current efficiencies of 72.38, 26.03, and 4.26 cd/A and external quantum efficiencies of 17.40, 18.96, and 6.20% for the green, red, and blue QLED devices, respectively. We envision that the result offers a low-cost, facile, and practically applicable solution-processing approach that works even in air for fabricating high-performance QLED devices.

Development of large-area monolithically integrated silicon-film photovoltaic modules

NASA Astrophysics Data System (ADS)

Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Ruffins, T. R.; Shreve, K. P.; Hall, R. B.; Barnett, A. M.

1993-06-01

This report describes work to develop Silicon-Film (trademark) Product 3 into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200 sq cm, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 sq cm monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R(sub s) effects. Test data for a nine-cell device (16 sq cm) indicated a V(sub oc) of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (less than 0.1 mA/sq cm) due to limited conduction through the ceramic and no process-related metallization shunts.

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

PubMed Central

Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

2018-01-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality. PMID:29515883

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model.

PubMed

Li, Jian; Fei, Ze-Yuan; Xu, Yi-Feng; Wang, Jie; Fan, Bing-Feng; Ma, Xue-Jin; Wang, Gang

2018-02-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

NASA Astrophysics Data System (ADS)

Li, Jian; Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

2018-02-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

Thermal Conductivity of a Nanoscale Yttrium Iron Garnet Thin-Film Prepared by the Sol-Gel Process

PubMed Central

2017-01-01

The thermal conductivity of a nanoscale yttrium iron garnet (Y3Fe5O12, YIG) thin-film prepared by a sol-gel method was evaluated using the ultrafast pump-probe technique in the present study. The thermoreflectance change on the surface of a 250 nm thick YIG film, induced by the irradiation of femtosecond laser pulses, was measured, and curve fitting of a numerical solution for the transient heat conduction equation to the experimental data was performed using the finite difference method in order to extract the thermal property. Results show that the film’s thermal conductivity is 22–83% higher than the properties of bulk YIG materials prepared by different fabrication techniques, reflecting the microstructural characteristics and quality of the film. PMID:28858249

Low temperature aluminum nitride thin films for sensory applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yarar, E.; Zamponi, C.; Piorra, A.

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/Vmore » up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengjin; Zeng, Yining; Li, Zhen

Here, we examine GBs with respect to non-GB regions (grain surfaces (GSs) and grain interiors (GIs)) in high-quality micrometer-sized perovskite CH 3NH 3PbI 3 (or MAPbI 3) thin films using high-resolution confocal fluorescence-lifetime imaging microscopy in conjunction with kinetic modeling of charge-transport and recombination processes. We show that, contrary to previous studies, GBs in our perovskite MAPbI3 thin films do not lead to increased recombination but that recombination in these films happens primarily in the non-GB regions (i.e., GSs or GIs). We also find that GBs in these films are not transparent to photogenerated carriers, which is likely associated withmore » a potential barrier at GBs. Lastly, even though GBs generally display lower luminescence intensities than GSs/GIs, the lifetimes at GBs are no worse than those at GSs/GIs, further suggesting that GBs do not dominate non-radiative recombination in MAPbI 3 thin films.« less

Composite membranes from photochemical synthesis of ultrathin polymer films

NASA Astrophysics Data System (ADS)

Liu, Chao; Martin, Charles R.

1991-07-01

THERE has recently been a resurgence of interest in synthetic membranes and membrane-based processes1-12. This is motivated by a wide variety of technological applications, such as chemical separations1-7, bioreactors and sensors8,9, energy conversion10,11 and drug-delivery systems12. Many of these technologies require the ability to prepare extremely thin, defect-free synthetic (generally polymeric) films, which are supported on microporous supports to form composite membranes. Here we describe a method for producing composite membranes of this sort that incorporate high-quality polymer films less than 50-nm thick. The method involves interfacial photopolymerization of a thin polymer film on the surface of the microporous substrate. We have been able to use this technique to synthesize a variety of functionalized ultrathin films based on electroactive, photoactive and ion-exchange polymers. We demonstrate the method here with composite membranes that show exceptional gas-transport properties.

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

PubMed

Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

2018-06-05

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Q-switched all-solid-state lasers and application in processing of thin-film solar cell

NASA Astrophysics Data System (ADS)

Liu, Liangqing; Wang, Feng

2009-08-01

Societal pressure to renewable clean energy is increasing which is expected to be used as part of an overall strategy to address global warming and oil crisis. Photovoltaic energy conversion devices are on a rapidly accelerating growth path driven by government, of which the costs and prices lower continuously. The next generation thin-film devices are considered to be more efficiency and greatly reduced silicon consumption, resulting in dramatically lower per unit fabrication costs. A key aspect of these devices is patterning large panels to create a monolithic array of series-interconnected cells to form a low current, high voltage module. This patterning is accomplished in three critical scribing processes called P1, P2, and P3. All-solid-state Q-switched lasers are the technology of choice for these processes, due to their advantages of compact configuration, high peak-value power, high repeat rate, excellent beam quality and stability, delivering the desired combination of high throughput and narrow, clean scribes. The end pumped all-solid-state lasers could achieve 1064nm IR resources with pulse width of nanoseconds adopting acoustic-optics Q-switch, shorter than 20ns. The repeat rate is up to 100kHz and the beam quality is close to diffraction limit. Based on this, 532nm green lasers, 355nm UV lasers and 266nm DUV lasers could be carried out through nonlinear frequency conversion. Different wave length lasers are chose to process selective materials. For example, 8-15 W IR lasers are used to scribe the TCO film (P1); 1-5 W green lasers are suitable for scribing the active semiconductor layers (P2) and the back contact layers (P3). Our company, Wuhan Lingyun Photo-electronic System Co. Ltd, has developed 20W IR and 5W green end-pumped Q-switched all-solid-state lasers for thin-film solar industry. Operating in high repeat rates, the speed of processing is up to 2.0 m/s.

X-ray powder diffractometry of intact film coated tablets--an approach to monitor the physical form of the active pharmaceutical ingredient during processing and storage.

PubMed

Yamada, Hiroyuki; Suryanarayanan, Raj

2007-08-01

The antiviral compound, 2-amino-6-(4-methoxyphenylthio)-9-[2-(phosphonomethoxy)ethyl]purine bis(2,2,2-trifluoroethyl)ester (MCC-478), can exist in several anhydrous polymorphic forms and also as a hemihydrate. The XRD patterns of the tablets, containing each form of the active pharmaceutical ingredient (API), revealed at least one peak unique to each form. A semiquantitative microdiffractometric method was developed to nondestructively characterize the physical form of the API in intact film-coated tablets. This was accomplished even though the weight fraction of the API was <0.2 and that of mannitol, a highly crystalline excipient, was approximately 0.6. The method was used to determine the effect of aqueous film-coating process on the physical form of the API. The final dosage form was also monitored following storage at 40 degrees C/75% RH for 6 months. There was no phase transformation of the API either due to the film-coating process or following accelerated storage. This technique has potential utility not only for process control during manufacture, but also for the quality control of the final product. (c) 2007 Wiley-Liss, Inc. and the American Pharmacists Association.

EFFECT OF QUALITY OF CHEST RADIOGRAPHS ON THE CATEGORIZATION OF COALWORKERS' PNEUMOCONIOSIS

PubMed Central

Pearson, N. G.; Ashford, J. R.; Morgan, D. C.; Pasqual, R. S. H.; Rae, S.

1965-01-01

An investigation into the effect of variations in radiographic technical quality on pneumoconiosis reading standards in the Pneumoconiosis Field Research of the National Coal Board is reported. From the group of men for whom retake films had been obtained because of unsatisfactory technique of the originals, a trial series of pairs and triplets of films showing differing technique was assembled. A total of 778 films was read for pneumoconiosis and assessed for technical quality by four readers. The quality was assessed in terms of three separate factors, viz., density (at high, medium, and low levels), contrast (satisfactory and unsatisfactory), and definition (satisfactory and unsatisfactory). The intra and inter observer consistency of this assessment was estimated, and the effect of techical quality on the reading of pneumoconiosis category was determined. A tendency for lower pneumoconiosis readings to be recorded on films with unsatisfactory technique was demonstrated. A random 10% sample of the best available films (those on which routine pneumoconiosis readings have been made) for all men examined since the beginning of the research was also read for technical quality. Of the total of 4,188 films, 80% were considered satisfactory. It appeared that films taken on second surveys were, in general, of rather better quality than those taken on first surveys. The physical attributes of the men examined had some effect on the technical standards, the proportion of unsatisfactory films rising with increasing values of the weight/sitting height ratio and being greater in men with pneumoconiosis categories 1 and A and in the middle age group. The tendency for lower pneumoconiosis readings to be recorded on films with unsatisfactory technique is in contrast to the results of work previously published. Different criteria for the selection of films and the assessment of technical quality, and possibly differing reading conventions, make comparison with other work difficult. PMID:14278806

Bio-Organic Optoelectronic Devices Using DNA

NASA Astrophysics Data System (ADS)

Singh, Thokchom Birendra; Sariciftci, Niyazi Serdar; Grote, James G.

Biomolecular DNA, as a marine waste product from salmon processing, has been exploited as biodegradable polymeric material for photonics and electronics. For preparing high optical quality thin films of DNA, a method using DNA with cationic surfactants such as DNA-cetyltrimethylammonium, CTMA has been applied. This process enhances solubility and processing for thin film fabrication. These DNA-CTMA complexes resulted in the formation of self-assembled supramolecular films. Additionally, the molecular weight can be tailored to suit the application through sonication. It revealed that DNA-CTMA complexes were thermostable up to 230 ∘ C. UV-VIS absorption shows that these thin films have high transparency from 350 to about 1,700 nm. Due to its nature of large band gap and large dielectric constant, thin films of DNA-CTMA has been successfully used in multiple applications such as organic light emitting diodes (OLED), a cladding and host material in nonlinear optical devices, and organic field-effect transistors (OFET). Using this DNA based biopolymers as a gate dielectric layer, OFET devices were fabricated that exhibits current-voltage characteristics with low voltages as compared with using other polymer-based dielectrics. Using a thin film of DNA-CTMA based biopolymer as the gate insulator and pentacene as the organic semiconductor, we have demonstrated a bio-organic FET or BioFET in which the current was modulated over three orders of magnitude using gate voltages less than 10 V. Given the possibility to functionalise the DNA film customised for specific purposes viz. biosensing, DNA-CTMA with its unique structural, optical and electronic properties results in many applications that are extremely interesting.

Development of Spray on Bag for manufacturing of large composites parts: Diffusivity analysis

NASA Astrophysics Data System (ADS)

Dempah, Maxime Joseph

Bagging materials are utilized in many composites manufacturing processes. The selection is mainly driven by cost, temperature requirements, chemical compatibility and tear properties of the bag. The air barrier properties of the bag are assumed to be adequate or in many cases are not considered at all. However, the gas barrier property of a bag is the most critical parameter, as it can negatively affect the quality of the final laminate. The barrier property is a function of the bag material, uniformity, thickness and temperature. Improved barrier properties are needed for large parts, high pressure consolidated components and structures where air stays entrapped on the part surface. The air resistance property of the film is defined as permeability and is investigated in this thesis. A model was developed to evaluate the gas transport through the film and an experimental cell was implemented to characterize various commercial films. Understanding and characterizing the transport phenomena through the film allows optimization of the bagging material for various manufacturing processes. Spray-on-Bag is a scalable alternative bagging method compared to standard films. The approach allows in-situ fabrication of the bag on large and complex geometry structures where optimization of the bag properties can be varied on a local level. An experimental setup was developed and implemented using a six axis robot and an automated spraying system. Experiments were performed on a flat surface and specimens were characterized and compared to conventional films. Air barrier properties were within range of standard film approaches showing the potential to fabricate net shape bagging structures in an automated process.

[Dose and image quality in intraoral radiography].

PubMed

Hjardemaal, O

1991-11-01

The technique factors when performing intraoral X-ray exposures must be selected in such a way that sufficient diagnostic information is obtained at a reasonable patient dose. The Danish National Institute of Radiation Hygiene has performed a study comprising 32 dental X-ray sets. The mean value of the skin dose for a maxillary molar was 9.6 mGy and the value for the dental colleges 7.0 mGy. For a mandibular incisor the corresponding doses were 7.7 mGy and 3.6 mGy. After the conclusion of the mentioned study it has been part of the institute's inspection procedure for dental X-ray sets to measure patient skin doses. 243 measurements were performed and the mean value of the entrance skin dose was 6.5 mGy and the dose interval was 0.7-57 mGy. All doses are normalised to speed class D film. At 16% of the inspected sets films of speed class E were used. The remainder used class D films. The spread in doses cannot be explained by variation in equipment parameters alone but is to a high degree due to a combination of inappropriate film processing and exposure time. Interviews with staff in dental clinics confirm that films are frequently processed until the desired density is obtained by visual estimation. It is shown that the skin dose when using film of speed class D can be kept below 7 mGy for a mandibular incisor. Concluding is stated that film processing shall be performed in accordance with specifications from the manufacturer of the developer. Film of speed class E must be used. Finally must the exposure time be graduated according to the object exposed.

High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

PubMed Central

Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

2016-01-01

In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

Crack-free CH3NH3PbI3 layer via continuous dripping method for high-performance mesoporous perovskite solar cells

NASA Astrophysics Data System (ADS)

Chen, Guo; Zheng, Jianghui; Zheng, LingLing; Yan, Xin; Lin, Huangding; Zhang, Fengyan

2017-01-01

The past five years have witnessed the uniquely rapid emergence of the mixed organic-inorganic halide perovskite solar cells. Here, a modified deposition process, continuous dripping method, is reported for fabricating high-performance and reproducible perovskite solar cells. We have systematically investigated the impact of different molar ratio of lead iodide (PbI2) to dimethylsulfoxide (DMSO) on the growth, morphology and crystallinity of CH3NH3PbI3 (MAPbI3) films obtained via this process. The high power conversion efficiency (PCE) perovskite solar cell originates in crack-free and highly crystallographic perovskite films prepared with optimized ratio of PbI2 to DMSO in first precursor solution. The best PCE of 17.76% and an average PCE of 16.37 ± 0.51% were obtained via this process. Moreover, the conventional solution two steps method was also carried out as a comparison to this process. This work provides a new simple solution approach to obtain high quality of perovskite thin films for high-performance and reproducible PSCs.

Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method

NASA Astrophysics Data System (ADS)

Oleszkiewicz, Waldemar; Kijaszek, Wojciech; Gryglewicz, Jacek; Zakrzewski, Adrian; Gajewski, Krzysztof; Kopiec, Daniel; Kamyczek, Paulina; Popko, Ewa; Tłaczała, Marek

2013-07-01

The work presents the results of a research carried out with Plasmalab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The deposition processes were carried out in CH4 or CH4/H2 atmosphere and the state of the plasma was investigated by the OES method. The RF plasma was capacitively coupled by 13.56 MHz generator with supporting ICP generator (13.56 Mhz). The deposition processes were conducted in constant value of RF generator's power and resultant value of the DC Bias. The power values of RF generator was set at 70 W and the power values of ICP generator was set at 300 W. In this work we focus on the influence of DLC film's thickness on optical, electrical and structural properties of the deposited DLC films. The quality of deposited DLC layers was examined by the Raman spectroscopy, AFM microscopy and spectroscopic ellipsometry. In the investigated DLC films the calculated sp3 content was ranging from 60 % to 70 %. The films were characterized by the refractive index ranging from 2.03 to 2.1 and extinction coefficient ranging from 0.09 to 0.12.

Orientation and Order in Shear-Aligned Thin Films of Cylinder-Forming Block Copolymers

NASA Astrophysics Data System (ADS)

Register, Richard

The regularity and tunability of the nanoscale structure in block copolymers makes their thin films attractive as nanolithographic templates; however, in the absence of a guiding field, self-assembly produces a polygrain structure with no particular orientation and a high density of defects. As demonstrated in the elegant studies of Ed Kramer and coworkers, graphoepitaxy can provide local control over domain orientation, with a dramatic reduction in defect density. Alternatively, cylindrical microdomains lying in the plane of the film can be aligned over macroscopic areas by applying shear stress at the film surface. In non-sheared films of polystyrene-poly(n-hexylmethacrylate) diblocks, PS-PHMA, the PS cylinder axis orientation relative to the surface switches from parallel to perpendicular as a function of film thickness; this oscillation is damped out as the fraction of the PS block increases, away from the sphere-cylinder phase boundary. In aligned films, thicknesses which possess the highest coverage of parallel cylinders prior to shear show the highest quality of alignment post-shear, as measured by the in-plane orientational order parameter. In well-aligned samples of optimal thickness, the quality of alignment is limited by isolated dislocations, whose density is highest at high PS contents, and by undulations in the cylinders' trajectories, whose impact is most severe at low PS contents; consequently, polymers whose compositions lie in the middle of the cylinder-forming region exhibit the highest quality of alignment. The dynamics of the alignment process are also investigated, and fit to a melting-recrystallization model which allows for the determination of two key alignment parameters: the critical stress needed for alignment, and an orientation rate constant. For films containing a monolayer of cylindrical domains, as PS weight fraction or overall molecular weight increases, the critical stress increases moderately, while the rate of alignment drastically decreases. As the number of layers of cylinders in the film increases, the critical stress decreases modestly, while the rate remains unchanged; substrate wetting condition has no measurable influence on alignment response. [Work of Raleigh Davis, in collaboration with Paul Chaikin.

Vacuum Deposition From A Welding Torch

NASA Technical Reports Server (NTRS)

Poorman, R. M.

1993-01-01

Process derived from arc welding produces films of high quality. Modified gas/tungsten-arc welding process developed for use in outer space. Welding apparatus in process includes hollow tungsten electrode through which inert gas flows so arc struck between electrode and workpiece in vacuum of space. Offers advantages of fast deposition, possibility of applying directional impetus to flow of materials, very low pressure at surface being coated, and inert environment.

Big-Data RHEED analysis for understanding epitaxial film growth processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P

Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in-situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED image, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the dataset are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of RHEED image sequence.more » This approach is illustrated for growth of LaxCa1-xMnO3 films grown on etched (001) SrTiO3 substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the assymetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.« less

Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

PubMed Central

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; Harvey, Steven P.; Ciesielski, Peter N.; Wheeler, Lance M.; Schulz, Philip; Lin, Lih Y.; Beard, Matthew C.; Luther, Joseph M.

2017-01-01

We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (VOC’s) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small VOC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%. PMID:29098184

Do grain boundaries dominate non-radiative recombination in CH 3NH 3PbI 3 perovskite thin films?

DOE PAGES

Yang, Mengjin; Zeng, Yining; Li, Zhen; ...

2017-01-13

Here, we examine GBs with respect to non-GB regions (grain surfaces (GSs) and grain interiors (GIs)) in high-quality micrometer-sized perovskite CH 3NH 3PbI 3 (or MAPbI 3) thin films using high-resolution confocal fluorescence-lifetime imaging microscopy in conjunction with kinetic modeling of charge-transport and recombination processes. We show that, contrary to previous studies, GBs in our perovskite MAPbI3 thin films do not lead to increased recombination but that recombination in these films happens primarily in the non-GB regions (i.e., GSs or GIs). We also find that GBs in these films are not transparent to photogenerated carriers, which is likely associated withmore » a potential barrier at GBs. Lastly, even though GBs generally display lower luminescence intensities than GSs/GIs, the lifetimes at GBs are no worse than those at GSs/GIs, further suggesting that GBs do not dominate non-radiative recombination in MAPbI 3 thin films.« less

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Editorial

NASA Astrophysics Data System (ADS)

Goh, Gregory K. L.

2014-06-01

This special issue of the Journal of Solid State Chemistry is a peer-reviewed collection of papers presented at the 7th International Conference on Materials for Advanced Technologies (ICMAT2013), Symposium Q - Innovative processing of inorganic films and nanostructures of functional materials, organised by the Materials Research Society, Singapore and held at the Singapore International Convention & Exhibition Centre, Singapore, from 30 June to 5 July 2013. The symposium focused mainly on films, porous networks and nanostructures formed by innovative processing routes that reduce energy consumption, use new mediums, combine techniques or even innovative synthesis approaches. The understanding of film and nanostructure growth mechanisms and crystal shape control were also discussed. We acknowledge the invaluable contributions of all invited, oral and poster presenters. I also take this opportunity to thank reviewers from all over the world who kindly helped in reviewing the manuscripts and provided valuable comments, making the publication of this high quality issue possible.

Unconventional Nanoscale Photoresponse and Degradation Process in Hybrid Organic-inorganic Perovskites.

NASA Astrophysics Data System (ADS)

Chu, Zhaodong; Yang, Mengjin; Schulz, Philip; Wu, Di; Zhu, Kai; Li, Xiaoqin; Lai, Keji

The remarkable performance of organic-inorganic perovskite solar cells (PSCs) is challenging the dogma that solution-processed thin films are inevitably associated with inferior energy conversion efficiencies. The surprisingly low impact of polycrystallinity on the film quality highlights the unusual photo-response of intrinsic defects and grain boundaries in these materials. Here, we report the first quantitative nanoscale photoconductivity imaging on methylammonium lead triiodide (MAPbI3) thin films by microwave impedance microscopy with light stimulation. The local photoconductivity as a function of the above-gap laser power is consistent with the high carrier mobility and long lifetime of MAPbI3. The photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. For encapsulated MAPbI3 films, the observed long-term degradation in photoconductivity begins with the disintegration of large grains due to the diffusion of water molecules through the capping layer. Our work suggests that the striking PSC performance is deeply rooted in the nanoscale optoelectronic properties of MAPbI3. We gratefully acknowledge financial support from NSF EFMA-1542747.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Couches minces supraconductrices à haute température critique pour l'électronique

NASA Astrophysics Data System (ADS)

Guilloux-Viry, M.; Perrin, A.

1998-08-01

High critical temperature superconductors (HTCS) are very promising for applications in microelectronics due to the control of high quality epitaxial thin films, in spite of a number of specific constraints. Active and passive devices are already available in various laboratories, prooving that applications are actually expected soon. We report here on the interest of HTCS thin films, on preparation processes including materials and substrates choice, and also on characterization methods which are required in order to chek the quality of the samples. Finally some illustrative examples of applications are presented. Les supraconducteurs à haute température critique ouvrent des perspectives prometteuses dans le domaine de l'électronique en raison de la maîtrise de la croissance de films minces de haute qualité cristalline et physique, malgré des difficultés spécifiques. Des dispositifs, aussi bien actifs que passifs, commencent à être réalisés dans divers laboratoires, montrant que des applications peuvent être effectivement envisagées à relativement court terme.

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

NASA Astrophysics Data System (ADS)

Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

2017-09-01

The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

Effect of superatmospheric oxygen packaging on sensorial quality, spoilage, and Listeria monocytogenes and Aeromonas caviae growth in fresh processed mixed salads.

PubMed

Allende, Ana; Jacxsens, Liesbeth; Devlieghere, Frank; Debevere, Johan; Artés, Francisco

2002-10-01

Atmospheres with O2 levels higher than 70 kPa have recently been suggested as an innovation to modified atmosphere packaging (MAP) for fresh processed vegetables to maintain sensory quality and safety. In the present work, mixed vegetable salad collected from a commercial processing plant and stored with the MAP technique was studied. Two gas mixtures were actively generated by using an initial O2 concentration of 95 kPa and combined with two plastic films. The low-barrier film permeability for O2 was 1,629 mlO2/m2 x 24 h x atm with 30 microm of thickness (Hyplast, Hoogstraten, Belgium) and the O2 permeability of the high-barrier film was 2 mlO2/m2 x 24h x atm with 150 microm of thickness (Euralpack, Wommelgen, Belgium) at 23 degrees C. As control, active conventional MAP with application of 3 to 5 kPa of O2 and 6 to 8 kPa of CO2 was used. Packaged salads were stored up to 8 days at 4 degrees C and at temperatures simulating chilled distribution chain conditions. Microbial safety and sensory quality, as well as the survival of inoculated Listeria monocytogenes and Aeromonas caviae, were monitored. The effect of superatmospheric O2 on the growth of aerobic microflora was variable. Under superatmospheric conditions, lactic acid bacteria and members of Enterobacteriaceae were inhibited. Nevertheless, growth of yeast and A. caviae seem to be stimulated by superatmospheric O2, whereas growth of psychrotrophic bacteria and L monocytogenes was not affected. The overall visual appearance (mainly color) of the mixed vegetable salads was better maintained and the shelf life prolonged when packaged under O2 concentrations greater than 50 kPa.

Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Ellmer, Klaus

2014-02-28

Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). Allmore » 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.« less

Overview of PAT process analysers applicable in monitoring of film coating unit operations for manufacturing of solid oral dosage forms.

PubMed

Korasa, Klemen; Vrečer, Franc

2018-01-01

Over the last two decades, regulatory agencies have demanded better understanding of pharmaceutical products and processes by implementing new technological approaches, such as process analytical technology (PAT). Process analysers present a key PAT tool, which enables effective process monitoring, and thus improved process control of medicinal product manufacturing. Process analysers applicable in pharmaceutical coating unit operations are comprehensibly described in the present article. The review is focused on monitoring of solid oral dosage forms during film coating in two most commonly used coating systems, i.e. pan and fluid bed coaters. Brief theoretical background and critical overview of process analysers used for real-time or near real-time (in-, on-, at- line) monitoring of critical quality attributes of film coated dosage forms are presented. Besides well recognized spectroscopic methods (NIR and Raman spectroscopy), other techniques, which have made a significant breakthrough in recent years, are discussed (terahertz pulsed imaging (TPI), chord length distribution (CLD) analysis, and image analysis). Last part of the review is dedicated to novel techniques with high potential to become valuable PAT tools in the future (optical coherence tomography (OCT), acoustic emission (AE), microwave resonance (MR), and laser induced breakdown spectroscopy (LIBS)). Copyright © 2017 Elsevier B.V. All rights reserved.

[Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

PubMed

Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

2014-07-01

In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

Challenges of implementing digital technology in motion picture distribution and exhibition: testing and evaluation methodology

NASA Astrophysics Data System (ADS)

Swartz, Charles S.

2003-05-01

The process of distributing and exhibiting a motion picture has changed little since the Lumière brothers presented the first motion picture to an audience in 1895. While this analog photochemical process is capable of producing screen images of great beauty and expressive power, more often the consumer experience is diminished by third generation prints and by the wear and tear of the mechanical process. Furthermore, the film industry globally spends approximately $1B annually manufacturing and shipping prints. Alternatively, distributing digital files would theoretically yield great benefits in terms of image clarity and quality, lower cost, greater security, and more flexibility in the cinema (e.g., multiple language versions). In order to understand the components of the digital cinema chain and evaluate the proposed technical solutions, the Entertainment Technology Center at USC in 2000 established the Digital Cinema Laboratory as a critical viewing environment, with the highest quality film and digital projection equipment. The presentation describes the infrastructure of the Lab, test materials, and testing methodologies developed for compression evaluation, and lessons learned up to the present. In addition to compression, the Digital Cinema Laboratory plans to evaluate other components of the digital cinema process as well.

Two-stage processed high-quality famatinite thin films for photovoltaics

NASA Astrophysics Data System (ADS)

Chalapathi, U.; Poornaprakash, B.; Cui, Hao; Park, Si-Hyun

2017-11-01

Famatinite (Cu3SbS4) thin films were prepared by annealing chemically grown Sb2S3-CuS stacks in a graphite box at 370-430 °C for 30 min under sulfur and N2 atmospheres. The films grown at 370 °C contain a minor CuSbS2 phase with dominant Cu3SbS4. Those films prepared at 400 °C and 430 °C are single-phase Cu3SbS4 with a tetragonal structure and lattice parameters a = 0.537 nm and b = 1.087 nm and a crystallite size of 25 nm. The grain size of the films increases as the annealing temperature is increased to 400 °C and subsequently decreases. The film morphology is compact and void-free with a grain size of 300-800 nm at 400 °C. The band gap of the films is 0.89 eV. The films exhibited p-type electrical conductivity and a relatively high hole mobility of 14.70 cm2V-1s-1 at 400 °C. Their attractive optoelectronic properties suggest that these films are suitable as solar cell absorber layers.

Preparation, linear and NLO properties of DNA-CTMA-SBE complexes

NASA Astrophysics Data System (ADS)

Manea, Ana-Maria; Rau, Ileana; Kajzar, Francois; Meghea, Aurelia

2013-10-01

Synthesis of deoxyribonucleic acid (DNA) - was cetyltrimethylammonium (CTMA) - sea buckthorn extract (SBE) at different concentrations is decribed. The complexes were processed into good optical quality thin films by spin coating on different substrates such as: glass, silica and ITO covered glass substrates. SBE contains many bioactive substances that can be used in the treatment of several diseases, such as cardiovascular disease, cancer, and acute mountain sickness. The obtained thin films were characterized for their spectroscopic, fluorescent, linear and nonlinear optical properties as function of SBE concentration. The third-order nonlinear optical (NLO) properties of thin films were determined by the optical third-harmonic generation technique at 1 064.2 nm fundamental wavelength.

Characterization of an Olive Flounder Bone Gelatin-Zinc Oxide Nanocomposite Film and Evaluation of Its Potential Application in Spinach Packaging.

PubMed

Beak, Songee; Kim, Hyeri; Song, Kyung Bin

2017-11-01

Olive flounder bone gelatin (OBG) was used for a film base material in this study. In addition, zinc oxide nanoparticles (ZnO) were incorporated into the OBG film to prepare a nanocomposite film and to impart antimicrobial activity to it. The tensile strength of the OBG film increased by 6.62 MPa, and water vapor permeability and water solubility decreased by 0.93 × 10 -9 g/m s Pa and 13.79%, respectively, by the addition of ZnO to the OBG film. In particular, the OBG-ZnO film exhibited antimicrobial activity against Listeria monocytogenes. To investigate the applicability of the OBG-ZnO packaging film, fresh spinach was wrapped in this film and stored for a week. The results indicated that the OBG-ZnO film showed antimicrobial activity against L. monocytogenes inoculated on spinach without affecting the quality of spinach, such as vitamin C content and color. Thus, the OBG-ZnO nanocomposite film can be applied as an efficient antimicrobial food packaging material. As a base material of edible films, gelatin was extracted from olive flounder bone, which is fish processing by-product. Olive flounder bone gelatin (OBG) nanocomposite films were prepared with zinc oxide nanoparticles (ZnO). For an application to antimicrobial packaging, spinach was wrapped with the OBG-ZnO nanocomposite film. © 2017 Institute of Food Technologists®.

Tuning the Curie temperature of epitaxial Nd0.6Sr0.4MnO3 thin films

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Kumar, P. S. Anil

2018-02-01

NdxSr1-xMnO3 (0.2 ≤ x ≤ 0.5) systems are widely studied in magnetism, popular for high colossal magnetoresistance and are ferromagnetic oxides with TC ranging from 200 K to 300 K. Recently, many of such compounds are re-visited for exploring the correlation of spin, charge and lattice degrees of freedom. Although, manganite thin films are the ideal candidates for studying the electron-correlation effects, the puzzle of obtaining a high quality epitaxial thin films of NdxSr1-xMnO3 are still unsolved contrary to its sister compound LaxSr1-xMnO3. Hence, in this study, we demonstrate the growth of best quality of Nd0.6Sr0.4MnO3 (NSMO) epitaxial thin films. This is evident from the TC and a sharp insulator-to-metal transition (IMT) coinciding at as high as ∼255 K against the bulk TC (∼270 K). It is the highest reported TC in Nd0.6Sr0.4MnO3 thin films to date. Moreover, as-deposited films with in situ oxygen annealing are not enough to relax the lattice of NSMO films due to the significant Jahn-Teller distortion in the film. With ex situ annealing processes alongside the various deposition and in situ annealing conditions, we have extensively studied the growth of epitaxial NSMO thin films on LaAlO3 (0 0 1) and SrTiO3 (0 0 1) to investigate the evolution of lattice and its one-to-one correspondence with the magnetism and the electrical properties of thin films. Accordingly, the enhanced magnetization, reduced resistivity and the higher TC and IMT of the NSMO films obtained from our extensive growth analysis looks promising for the future applications across the TC and IMT.

Fabrication of a novel quartz micromachined gyroscope

NASA Astrophysics Data System (ADS)

Xie, Liqiang; Xing, Jianchun; Wang, Haoxu; Wu, Xuezhong

2015-04-01

A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition. In the quartz wet etching process, the quality of Cr/Au mask films affecting the process are studied by experiment. An excellent mask film with 100 Å Cr and 2000 Å Au is achieved by optimization of experimental parameters. Crystal facets after etching seriously affect the following sidewall electrodes deposition process and the structure's mechanical behaviours. Removal of crystal facets is successfully implemented by increasing etching time based on etching rate ratios between facets and crystal planes. In the electrodes deposition process, an aperture mask evaporation method is employed to prepare electrodes on 3-dimensional surfaces of the gyroscope structure. The alignments among the aperture masks are realized by the ABM™ Mask Aligner System. Based on the processes described above, a z-axis quartz gyroscope is fabricated successfully.

Ion Beam Analysis of Iridium-Based TES for Microcalorimeter Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gomes, M. Ribeiro; Galeazzi, M.; Bogorin, D.

2009-12-16

The physical properties of thin multilayer structures are deeply related to the crystalline quality and stoichiometry of the films. The interface roughness/mixing require a detailed study to determine its influence on the growth processes and surface topography. This is an important aspect when we have lattice mismatch between the superconducting thin-films and the substrates, and a high reliability/reproducibility is required as for large array microcalorimeter applications, as in the case of the MARE experiment, designed to measure the mass of the neutrino with sub-eV sensitivity by measuring the beta decay of {sup 187}Re with cryogenic microcalorimeters. Ion beam analysis techniquesmore » are ideal to determine the thickness and concentration profiles of the chemical species in ultra-thin films. Here we present the results on the Ir-based superconducting films deposited on Si-substrates based on systematic investigations of the concentration depth profiles of the multilayer structure using 2.0 MeV {sup 4}He{sup +} ions for high resolution Rutherford Backscattering Spectrometry combined with X-Ray Reflectrometry to evaluate the interface/roughness mixing and the crystalline quality in the TES prototypes.« less

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Exploration of new methods for growing Ag films on Au(111) studied by ARPES

NASA Astrophysics Data System (ADS)

Luh, Dah-An; Cheng, Cheng-Maw; Tsai, Chi-Ting; Tsuei, Ku-Ding

2007-03-01

Ag/Au(111) thin films have attracted lots of interests as a model system in the past decades. Ag and Au are lattice-matched, and thin Ag films of very high quality are expected to grow on Au(111). However, the intermixing between Ag and Au at elevated temperatures has been a major concern during the growth of Ag films on the Au(111) surface. In many previous studies, Ag was deposited on the Au(111) surface at near room temperature to avoid the intermixing problem. Investigating the results from these studies, the Ag films on Au(111) grown by this recipe still show clear thickness variation. This thickness variation may result from Ag-Au intermixing or film roughening during the process of room temperature deposition. We are revisiting this classical model system with new growth methods. Our goal is to find growth methods that will stop the intermixing between Ag and Au and reduce the variation in the thickness of Ag films. Preliminary results from our study will be presented in this poster.

Spectroscopic and antimicrobial studies of polystyrene films under air plasma and He-Ne laser treatment

NASA Astrophysics Data System (ADS)

Pawde, S. M.; Parab, Sanmesh S.

2008-05-01

Polystyrene (PS) films are used in packaging and biomedical applications because of their transparency and good environmental properties. The present investigation is centered on the antifungal and antibacterial activities involved in the film surface. Subsequently, microbial formations were immobilized on the modified PS films. Living microorganisms such as bacteria and yeast were used. Untreated PS films show very fast rate of growth of bacteria within few hours. The study involves developments of polymer surfaces with bacterial growth and further studies after giving antibacterial treatment such as plasma treatment. Major emphasis has been given to study the effect of various parameters which can affect the performance of the improved material. Films were prepared by two methods: plasma treatment under vacuum and under ongoing He-Ne laser source. The parameters such as (1) surface area by contact angle measurements, (2) quality of material before and after treatment by SEM and FTIR spectra and (3) material characterization by UV-vis spectra were studied. It was observed that plasma treatment of the PS material for different processing time improved the surface properties of PS films.

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

Biobased films prepared from collagen solutions derived from un-tanned hides

USDA-ARS?s Scientific Manuscript database

The U.S. hide and leather industries are facing challenges of meeting environmental imperatives; quantifying, maintaining, and improving current hides and leather product quality; developing new processes and products; and improving utilization of waste. One of our contributions to address these on...

Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation

NASA Astrophysics Data System (ADS)

Al-Asedy, Hayder J.; Al-Khafaji, Shuruq A.; Bakhtiar, Hazri; Bidin, Noriah

2018-03-01

This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol-gel and spin-coating method. The impact of varying laser energy (150-200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10- 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150-200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol-gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37-3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.

Evaluation of resonating Si cantilevers sputter-deposited with AlN piezoelectric thin films for mass sensing applications

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Waag, A.; Ababneh, A.; Seidel, H.; Schmid, U.; Peiner, E.

2010-06-01

We report on a micro-machined resonator for mass sensing applications which is based on a silicon cantilever excited with a sputter-deposited piezoelectric aluminium nitride (AlN) thin film actuator. An inductively coupled plasma (ICP) cryogenic dry etching process was applied for the micro-machining of the silicon substrate. A shift in resonance frequency was observed, which was proportional to a mass deposited in an e-beam evaporation process on top. We had a mass sensing limit of 5.2 ng. The measurements from the cantilevers of the two arrays revealed a quality factor of 155-298 and a mass sensitivity of 120.34 ng Hz-1 for the first array, and a quality factor of 130-137 and a mass sensitivity of 104.38 ng Hz-1 for the second array. Furthermore, we managed to fabricate silicon cantilevers, which can be improved for the detection in the picogram range due to a reduction of the geometrical dimensions.

36 CFR 1238.10 - What are the format standards for microfilming records?

Code of Federal Regulations, 2011 CFR

2011-07-01

... and format for meeting image quality requirements. When microfilming on 35mm film for aperture card...). The 35mm film used in the aperture card application must conform to film designated as LE 500 in ISO... used as specified for the size and quality of the documents being filmed. Use ANSI/AIIM MS23...

Effect of laser processing on physical properties of (Ba0.85Ca0.15Ti0.9Zr0.1O3) lead-free thick films fabricated by the electrophoretic deposition

NASA Astrophysics Data System (ADS)

Ramana, E. Venkata; Ferreira, N. M.; Mahajan, A.; Ferro, Marta C.; Figueiras, F.; Graça, M. P. F.; Valente, M. A.

2018-02-01

In this work, we have fabricated lead-free piezoelectric Ba0.85Ca0.15Ti0.9Zr0.1O3 thick films by the electrophoretic deposition (EPD) followed by a continuous-wave CO2 laser annealing and demonstrated the effect of laser energy on the quality of the final product. Thick films annealed under optimized conditions, 50 W/15 min, show a controlled microstructure/density compared to those derived from higher laser power/annealing time/conventional sintering. The increase in laser power above this limit affects the grain growth kinetics and results in the compositional heterogeneities. From the results of Raman spectra, it was found that the film annealed under optimized conditions has a high degree of crystallinity and tetragonality, while the increase in laser fluence results in the growth of A1g mode. The controlled composition and microstructure, thus has resulted in the improved ferroelectricity with a remanent polarization 12 μC/cm2, on par with the bulk or larger than the films grown by the chemical solution deposition techniques. From the piezoresponse studies, we found that the film annealed at 75 W/5 min has weak ferroelectric nature with no switchable ferroelectric domains compared to those under optimized conditions. Subtle differences in phase transition temperatures and drop in ferroelectric polarization, for films annealed conventionally or at higher laser fluence, are related to porosity or site defects as well as compositional heterogeneities. Our study demonstrates that the combination of EPD and laser annealing is an effective way to achieve high quality piezoelectric thick films with a controlled composition, useful for energy harvesting applications.

Preliminary results of SAR soil moisture experiment, November 1975

NASA Technical Reports Server (NTRS)

Choudhury, B. J.; Chang, A. T. C.; Schmugge, T. J.; Salomonson, V. V.; Wang, J. R.

1979-01-01

The experiment was performed using the Environmental Research Institute of Michigan's (ERIM) dual-frequency and dual-polarization side-looking SAR system on board a C-46 aircraft. For each frequency, horizontally polarized pulses were transmitted and both horizontally and vertically polarized return signals were recorded on the signal film simultaneously. The test sites were located in St. Charles, Missouri; Centralia, Missouri; and Lafayette, Indiana. Each test site was a 4.83 km by 8.05 km (3 mile by 5 mile) rectangular strip of terrain. Concurrent with SAR overflight, ground soil samples of 0-to-2.5 cm and 0-to-15 cm layers were collected for soil moisture estimation. The surface features were also noted. Hard-copy image films and the digital data produced via optical processing of the signal films are analyzed in this report to study the relationship of radar backscatter to the moisture content and the surface roughness. Many difficulties associated with processing and analysis of the SAR imagery are noted. In particular, major uncertainty in the quantitative analysis appeared due to the difficulty of quality reproduction of digital data from the signal films.

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

NASA Astrophysics Data System (ADS)

Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

1993-07-01

Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

Ferroelectric thin-film capacitors and piezoelectric switches for mobile communication applications.

PubMed

Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L; Tiggelman, Mark P J; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

2009-08-01

Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 for stacked capacitors combined with breakdown voltages of 90 V have been achieved. The integration of these high-density capacitors with extremely high breakdown voltage is a major accomplishment in the world of passive components and has not yet been reported for any other passive integration technology. Furthermore, thin-film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1992-01-01

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Growth of high quality germanium films on patterned silicon substrates and applications

NASA Astrophysics Data System (ADS)

Vanamu, Ganesh

The principal objective of this work is to determine optimal pattern structures for highest quality (defect free) heteroepitaxial growth. High quality films of Ge on Si are of significant importance and can be used in high electron mobility devices, photodetectors for optical communications (1.3mum or 1.55mum) and integrating III-V optoelectronic devices. However, a 4% lattice mismatch and ˜ 50% thermal expansion mismatch between Ge and Si create three major challenges in growing high quality Ge films on Si, (a) high surface roughness due to a pronounced <110> crosshatch pattern, (b) high dislocation densities in Ge films and (c) high density of microcracks and wafer bending. A common way of reducing lattice and thermal expansion mismatch is to form a "virtual substrate (VS)" by growing a graded composition followed by a uniform layer of the desired epitaxial film on a defect-free Si substrate. Virtual graded layers could not decrease the dislocation densities to the numbers acceptable for most of the devices. Mathews et al. first proposed that limiting the lateral dimensions of the sample prior to growth could reduce the dislocation density. Later On Fitzgerald proposed that patterning decreases the dislocation density in the films. In this work we show high quality crosshatch-free Ge films with dislocation density ˜ 105 cm-2 on the nano-patterned Si and also high quality GaAs films on the Ge/Si virtual substrate. The first step in this research was to perform a systematic study to identify the role of pattern width on the quality of Ge growth. We investigated micrometer and submicrometer scale patterns. We demonstrated that the quality of the heteroepitaxial layers improves as the pattern width decreases. Then we have decreased the pattern width to nanometer-scale dimensions. Significant improvement of the Ge film quality was observed. We used novel interferometric lithography techniques combined with reactive ion and wet chemical etching to fabricate Si structures. The patterning was done using standard photomask based lithography. We analyzed the quality of the Ge films using high resolution x-ray diffraction, TEM and SEM. We performed etch pit density (EPD) measurements by counting the pits formed using a Nomarski optical microscope. In order to correlate characterization with device performance, we designed an inter-digitated pattern to form Ge based metal semiconductor metal photodetector and measured the photoresponse of the Ge films. Preliminary results were very promising. We then grew 4 mum GaAs on the Ge/Si using MBE (0.5 mum/hr and 570°C) and analyzed the GaAs film quality. We also performed modeling to calculate strain energy density and wafer bending in multi-layer films grown epitaxially on planar Si substrates. We have also compared the models with experiments. (Abstract shortened by UMI.)

Comprehensive Study of Sol-Gel versus Hydrolysis-Condensation Methods To Prepare ZnO Films: Electron Transport Layers in Perovskite Solar Cells.

PubMed

Zhao, Yu-Han; Zhang, Kai-Cheng; Wang, Zhao-Wei; Huang, Peng; Zhu, Kai; Li, Zhen-Dong; Li, Da-Hua; Yuan, Li-Gang; Zhou, Yi; Song, Bo

2017-08-09

Owing to the high charge mobility and low processing temperature, ZnO is regarded as an ideal candidate for electron transport layer (ETL) material in thin-film solar cells. For the film preparation, the presently dominated sol-gel (SG) and hydrolysis-condensation (HC) methods show great potential; however, the effect of these two methods on the performance of the resulting devices has not been investigated in the same frame. In this study, the ZnO films made through SG and HC methods were applied in perovskite solar cells (Pero-SCs), and the performances of corresponding devices were compared under parallel conditions. We found that the surface morphologies and the conductivities of the films prepared by SG and HC methods showed great differences. The HC-ZnO films with higher conductivity led to relatively higher device performance, and the best power conversion efficiencie (PCE) of 12.9% was obtained; meanwhile, for Pero-SCs based on SG-ZnO, the best PCE achieved was 10.9%. The better device performance of Pero-SCs based on HC-ZnO should be attributed to the better charge extraction and transportation ability of HC-ZnO film. Moreover, to further enhance the performance of Pero-SCs, a thin layer of pristine C 60 was introduced between HC-ZnO and perovskite layers. By doing so, the quality of perovskite films was improved, and the PCE was elevated to 14.1%. The preparation of HC-ZnO film involves relatively lower-temperature (maximum 100 °C) processing; the films showed better charge extraction and transportation properties and can be a more promising ETL material in Pero-SCs.

A model for a PC-based, universal-format, multimedia digitization system: moving beyond the scanner.

PubMed

McEachen, James C; Cusack, Thomas J; McEachen, John C

2003-08-01

Digitizing images for use in case presentations based on hardcopy films, slides, photographs, negatives, books, and videos can present a challenging task. Scanners and digital cameras have become standard tools of the trade. Unfortunately, use of these devices to digitize multiple images in many different media formats can be a time-consuming and in some cases unachievable process. The authors' goal was to create a PC-based solution for digitizing multiple media formats in a timely fashion while maintaining adequate image presentation quality. The authors' PC-based solution makes use of off-the-shelf hardware applications to include a digital document camera (DDC), VHS video player, and video-editing kit. With the assistance of five staff radiologists, the authors examined the quality of multiple image types digitized with this equipment. The authors also quantified the speed of digitization of various types of media using the DDC and video-editing kit. With regard to image quality, the five staff radiologists rated the digitized angiography, CT, and MR images as adequate to excellent for use in teaching files and case presentations. With regard to digitized plain films, the average rating was adequate. As for performance, the authors recognized a 68% improvement in the time required to digitize hardcopy films using the DDC instead of a professional quality scanner. The PC-based solution provides a means for digitizing multiple images from many different types of media in a timely fashion while maintaining adequate image presentation quality.

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

2016-05-01

Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

Optical Studies and Poling of DNA NLO Waveguides

NASA Astrophysics Data System (ADS)

Heckman, Emily; Grote, James

2005-04-01

Deoxyribonucleic acid (DNA), extracted from salmon sperm through an enzyme isolation process, is precipitated with a surfactant complex, cetyltrimethl-ammonium (CTMA), for application as a nonlinear optical material. Preliminary characterization studies suggest that DNA-CTMA may be suitable for use as the host material in the poled core layer of electro-optically-active waveguide devices. Poling results and techniques for poled chromophore-DNA-CTMA films will be discussed. Optical characterization studies of the DNA-CTMA films, including optical propagation losses and considerations in making DNA-CTMA an optical quality material, will be presented.

Corrosion protective performance of amino trimethylene phosphonic acid-metal complex layers fabricated on the cold-rolled steel substrate via one-step assembly

NASA Astrophysics Data System (ADS)

Yan, Ru; He, Wei; Zhai, Tianhua; Ma, Houyi

2018-06-01

Seeing that amino trimethylene phosphonic acid (ATMP) possesses very strong complexation ability to metal ions and the phosphonic acid group has good affinity for the oxidized iron surface, herein a simple and rapid film-forming method (one-step assembly method) was developed to construct the ATMP-Zn complex conversion layers (ATMP-Zn layers for short) on the cold-rolled steel (CRS) substrate. Zinc ions were found to participate in the formation process of ATMP-based composite film, which made the Zn-containing ATMP film significantly different in appearance, thickness, microstructure and film-forming mechanisms from the Zn-free ATMP film. There was mainly iron (ш) phosphonate in the Zn-free ATMP film, whereas there were Zn2+-ATMP complex and a certain amount of ZnO in the ATMP-Zn composite film. In addition, electrochemical test results clearly indicate that corrosion resistance of ATMP-Zn composite film was greatly enhanced due to the presence of Zn component. Moreover, the corrosion resistance performance could be controlled by adjusting film-forming time, pH and ATMP concentration in the film-forming solutions. The present study provides a new method for the design and fabrication of high-quality environmentally-friendly conversion layers.

Biobased films prepared from collagen solutions derived from un-tanned hides

USDA-ARS?s Scientific Manuscript database

The U.S. hide and leather industries are facing challenges of meeting environmental imperatives; quantifying, maintaining, and improving current hides and leather product quality; developing new processes and products; and improving utilization of waste. One of our efforts to address these new chal...

TECHNOLOGY AND THE INSTRUCTIONAL PROCESS.

ERIC Educational Resources Information Center

FINN, JAMES D.

A TEACHER SHORTAGE, LARGE CLASSES, AND NEED FOR QUALITY INSTRUCTION FORCED EDUCATION INTO MASS INSTRUCTIONAL TECHNOLOGY. INSTRUCTIONAL TECHNOLOGY IS GOVERNED BY SUCH SYSTEMS AS TELEVISION AND FILMS WHICH CAN REACH MORE STUDENTS WITH FEWER TEACHERS. THERE IS A TREND TOWARD INDIVIDUAL INSTRUCTION UTILIZING TEACHING MACHINES. IF A COMBINATION OF…

Graphene Growth on Low Carbon Solubility Metals

NASA Astrophysics Data System (ADS)

Wofford, Joseph Monroe

Advances in synthesis are imperative if graphene is to fulfill its scientific and technological potential. Single crystal graphene of is currently available only in the small flakes generated by mechanical exfoliation. Layers of larger size may be grown either by the thermal decomposition of SiC or by chemical vapor deposition on metals. However, as they are currently implemented, these methods yield graphene films of inferior quality. Thus the requirement for wafer-scale, high-quality graphene films remains unmet. This dissertation addresses this issue by examining graphene growth on metal surfaces. Through a survey of the fundamental underlying processes, it provides guidance for improving the quality of the resulting graphene films. Graphene was grown on Cu(100), Cu(111), and Au(111) by physical vapor deposition of elemental C. The nucleation and growth behaviors of graphene were evaluated by low-energy electron microscopy. Graphene tends to nucleate heterogeneously at surface imperfections although it also does so homogeneously on Cu(111) and Au(111). Graphene growing on Cu(100) is governed by the attachment kinetics of C at the propagating crystal front. The resulting angularly dependent growth rate sculpts individual crystals into elongated lobes. In contrast, graphene growth on both Cu(111) and Au(111) is surface diffusion limited. This yields ramified, dendritic graphene islands. Graphene films grown on Cu(100) contain significant rotational disorder. This disorder is partially attributable to the symmetry mismatch between film and substrate. The common symmetry between graphene and Cu(111) contributes to a significant reduction in disorder in films grown on this surface. Most graphene domains occupy a ˜6º arc of orientations. On Au(111) the vast majority of graphene domains are locked into alignment with the substrate surface. The extraordinary extent of their orientational homogeneity is such that the resulting graphene film is a quasi-single crystal. The findings presented illustrate how metal species and crystal symmetry influence the structural properties of monolayer graphene. The selection of an optimal substrate for graphene growth can significantly reduce crystalline disorder in the resulting film.

Disruptive and Sustaining Technology Development Approaches in Defense Acquisition

DTIC Science & Technology

2014-04-30

feature for the emerging personal computer market. Disruptive innovation also operates on the scale of an entire market. The story of Eastman Kodak ...quality pictures, it was only available to those with expertise in, and desire to, chemically process the film. The Kodak box camera took lower quality...into a niche market. A century later the scenario repeated itself in amateur photography. Kodak had become locked into their century-old business

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

NASA Astrophysics Data System (ADS)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Determination and Quantification of Molecular Interactions in Protein Films: A Review.

PubMed

Hammann, Felicia; Schmid, Markus

2014-12-10

Protein based films are nowadays also prepared with the aim of replacing expensive, crude oil-based polymers as environmentally friendly and renewable alternatives. The protein structure determines the ability of protein chains to form intra- and intermolecular bonds, whereas the degree of cross-linking depends on the amino acid composition and molecular weight of the protein, besides the conditions used in film preparation and processing. The functionality varies significantly depending on the type of protein and affects the resulting film quality and properties. This paper reviews the methods used in examination of molecular interactions in protein films and discusses how these intermolecular interactions can be quantified. The qualitative determination methods can be distinguished by structural analysis of solutions (electrophoretic analysis, size exclusion chromatography) and analysis of solid films (spectroscopy techniques, X-ray scattering methods). To quantify molecular interactions involved, two methods were found to be the most suitable: protein film swelling and solubility. The importance of non-covalent and covalent interactions in protein films can be investigated using different solvents. The research was focused on whey protein, whereas soy protein and wheat gluten were included as further examples of proteins.

Determination Quantification of Molecular Interactions in Protein Films: A Review

PubMed Central

Hammann, Felicia; Schmid, Markus

2014-01-01

Protein based films are nowadays also prepared with the aim of replacing expensive, crude oil-based polymers as environmentally friendly and renewable alternatives. The protein structure determines the ability of protein chains to form intra- and intermolecular bonds, whereas the degree of cross-linking depends on the amino acid composition and molecular weight of the protein, besides the conditions used in film preparation and processing. The functionality varies significantly depending on the type of protein and affects the resulting film quality and properties. This paper reviews the methods used in examination of molecular interactions in protein films and discusses how these intermolecular interactions can be quantified. The qualitative determination methods can be distinguished by structural analysis of solutions (electrophoretic analysis, size exclusion chromatography) and analysis of solid films (spectroscopy techniques, X-ray scattering methods). To quantify molecular interactions involved, two methods were found to be the most suitable: protein film swelling and solubility. The importance of non-covalent and covalent interactions in protein films can be investigated using different solvents. The research was focused on whey protein, whereas soy protein and wheat gluten were included as further examples of proteins. PMID:28788285

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

NASA Astrophysics Data System (ADS)

Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

2018-05-01

Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method

PubMed Central

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-01

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe2 absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe2 precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe2 absorber layers. After spraying on Mo/glass substrates, the CuInSe2 thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N2 as atmosphere. When the CuInSe2 thin films were annealed, without extra Se or H2Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe2 absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe2 absorber layers could be controlled as the volume of used dispersed CuInSe2-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe2 absorber layers obtained by the Spray Coating Method. PMID:28788451

Flexible probe for measuring local conductivity variations in Li-ion electrode films

NASA Astrophysics Data System (ADS)

Hardy, Emilee; Clement, Derek; Vogel, John; Wheeler, Dean; Mazzeo, Brian

2018-04-01

Li-ion battery performance is governed by electronic and ionic properties of the battery. A key metric that characterizes Li-ion battery cell performance is the electronic conductivity of the electrodes, which are metal foils with thin coatings of electrochemically active materials. To accurately measure the spatial variation of electronic conductivity of these electrodes, a micro-four-line probe (μ4LP) was designed and used to non-destructively measure the properties of commercial-quality Li-ion battery films. This previous research established that the electronic conductivity of film electrodes is not homogeneous throughout the entirety of the deposited film area. In this work, a micro-N-line probe (μNLP) and a flexible micro-flex-line probe (μFLP) were developed to improve the non-destructive micro-scale conductivity measurements that we can take. These devices were validated by comparing test results to that of the predecessor, the micro-four-line probe (μ4LP), on various commercial-quality Li-ion battery electrodes. Results show that there is significant variation in conductivity on a millimeter and even micrometer length scale through the electrode film. Compared to the μ4LP, the μNLP and μFLP also introduce additional measurement configuration possibilities, while providing a more robust design. Researchers and manufacturers can use these probes to identify heterogeneity in their electrodes during the fabrication process, which will lead to the development of better batteries.

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Improved cost-effective fabrication of arbitrarily shaped μIPMC transducers

NASA Astrophysics Data System (ADS)

Feng, Guo-Hua; Chen, Ri-Hong

2008-01-01

Conventional ionic polymer-metal composite (IPMC) production cuts individual transducers from bulk IPMC sheets. This paper presents a novel photolithographic technique that grows a large array of identical devices on a thin (~µm range) parylene diaphragm supported on a perforated substrate of material that is immune to the subsequent processing liquids. In particular, the new technique relies on a unique wax fill-up and removal concept that can produce arbitrarily shaped Nafion films with micron feature size. The developed process is cheap and results in devices of high uniformity and reliability, with greater design flexibility. Microtensile testing characterizes the fracture profiles of the non-electroded Nafion film and IPMC. Young's modulus is characterized, as well as maximum displacement and current consumption under various loading, driving voltages, waveforms and frequencies. High product quality and low process costs make this process of interest for mass production of micromachined IPMC transducers.

Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

PubMed

Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

2014-10-28

Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

NASA Astrophysics Data System (ADS)

Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Fabrication and electrochemistry characteristics of nickel-doped diamond-like carbon film toward applications in non-enzymatic glucose detection

NASA Astrophysics Data System (ADS)

Liu, Chi-Wen; Chen, Wei-En; Sun, Yin Tung Albert; Lin, Chii-Ruey

2018-04-01

This research work focused on the fabrication of nickel-doped diamond-like carbon (DLC) films and their characteristics including of surface morphology, microstructure, and electrochemical aiming at applications in non-enzymatic glucose detection. Novel nanodiamond target was employed in unbalanced magnetron radio-frequency co-sputtering process to prepared high quality Ni-doped DLC thin film at room temperature. TEM analysis reveals a highly uniform distribution of Ni crystallites in amorphous carbon matrix with fraction ranged from 3 to 11.5 at.% which is considered as active sites for the glucose detection. Our cyclic voltammetry measurements using 0.1 M H2SO4 solution demonstrated that the as-prepared Ni-doped DLC films possess large electrochemical potential window of 2.12 V, and this was also observed to be significantly reduced at high Ni doping level owing to lower sp3 fraction. The non-enzymatic glucose detection investigation indicates that the Ni-doped DLC thin film electrode prepared under 7 W of DC sputtering power on Ni target possesses good detecting performance, high stability, and high sensitivity to glucose concentration up to 10 mM, even with the existence of uric acid and ascorbic acid. The peak current was observed to be proportional to glucose concentration and scanning rate, demonstrating highly reversibility redox process of the film electrode and glucose.

Emerging materials for solar cell applications: Electrodeposited CdTe

NASA Astrophysics Data System (ADS)

Rod, R. L.; Basol, B. M.; Stafsudd, O.

1980-09-01

Work was centered about improving electroplating processes and cell fabrication techniques, with emphasis being given to three differing n-CdTe/Au Schottky configurations. The highest values of efficiency related parameters achieved with a simulated solar irradiation of 100 mW/sq cm were 0.57V for open circuit voltage, 0.6 for fill factor, and 6 mA/sq cm for short circuit current. Four important parameters are known to control the quality of the Monosolar electrodeposition process and resultant solar cells. They are electrolyte temperature, Te concentration in the solution at a specific pH, deposition or quasi-rest potential, and flow pattern of the electrolyte (stirring). The first three considerations are believed to be fully understood and optimized. Work is underway to further understand the effects of stirring on the diffusion of ionic components and the effects on CdTe film performance. Work was accelerated during the quarter to increase the short circuit current. Parallel programs using laser irradiation of finished CdTe films, heat treatment, and changes in the electrodeposition process itself to recrystallize films were started.

Growth of Cu2ZnSnSe4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency.

PubMed

Li, Jianjun; Wang, Hongxia; Wu, Li; Chen, Cheng; Zhou, Zhiqiang; Liu, Fangfang; Sun, Yun; Han, Junbo; Zhang, Yi

2016-04-27

It is a challenge to fabricate high quality Cu2ZnSnSe4 (CZTSe) film with low Cu content (Cu/(Zn + Sn) < 0.8). In this work, the growth mechanisms of CZTSe films under different Se vapor composition are investigated by DC-sputtering and a postselenization approach. The composition of Se vapor has important influence on the compactability of the films and the diffusion of elements in the CZTSe films. By adjusting the composition of Se vapor during the selenization process, an optimized two step selenization process is proposed and highly crystallized CZTSe film with low Cu content (Cu/(Zn + Sn) = 0.75) is obtained. Further study of the effect of Cu content on the morphology and photovoltaic performance of the corresponding CZTSe solar cells has shown that the roughness of the CZTSe absorber film increases when Cu content decreases. As a consequence, the reflection loss of CZTSe solar cells reduces dramatically and the short circuit current density of the cells improve from 34.7 mA/cm(2) for Cu/(Zn + Sn) = 0.88 to 38.5 mA/cm(2) for Cu/(Zn + Sn) = 0.75. In addition, the CZTSe solar cells with low Cu content show longer minority carrier lifetime and higher open circuit voltage than the high Cu content devices. A champion performance CZTSe solar cell with 10.4% efficiency is fabricated with Cu/(Zn + Sn) = 0.75 in the CZTSe film without antireflection coating.

A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit

NASA Astrophysics Data System (ADS)

Jiang, Yuan; Zhang, Menglun; Duan, Xuexin; Zhang, Hao; Pang, Wei

2017-07-01

In this paper, a 2.6 GHz air-gap type thin film piezoelectric MEMS resonator was fabricated on a flexible polyethylene terephthalate film. A fabrication process combining transfer printing and hot-embossing was adopted to form a free-standing structure. The flexible radio frequency MEMS resonator possesses a quality factor of 946 and an effective coupling coefficient of 5.10%, and retains its high performance at a substrate bending radius of 1 cm. The achieved performance is comparable to that of conventional resonators on rigid silicon wafers. Our demonstration provides a viable approach to realizing universal MEMS devices on flexible polymer substrates, which is of great significance for building future fully integrated and multi-functional wireless flexible electronic systems.

CH3NH3I treatment temperature of 70 °C in low-pressure vapor-assisted deposition for mesoscopic perovskite solar cells

NASA Astrophysics Data System (ADS)

Jin, Wenbin; Zou, Xiaoping; Bai, Xiao; Yang, Ying; Chen, Dan

2018-01-01

Herein, we report a modified vapor-assisted deposition method to fabricate CH3NH3PbI3 film at 70 °C in a vacuum drying oven. The modified method has excellent operability and expandability in preparing perovskite solar cells. The CH3NH3I treatment temperature is 130 °C or 150 °C in conventional method, but we reduced the temperature to 70 °C in the modified vapor-assisted method. Meanwhile, the quality of CH3NH3PbI3 films prepared via the modified method is superior to that of CH3NH3PbI3 films of solution-processed method.

Three-dimensional characterization of pigment dispersion in dried paint films using focused ion beam-scanning electron microscopy.

PubMed

Lin, Jui-Ching; Heeschen, William; Reffner, John; Hook, John

2012-04-01

The combination of integrated focused ion beam-scanning electron microscope (FIB-SEM) serial sectioning and imaging techniques with image analysis provided quantitative characterization of three-dimensional (3D) pigment dispersion in dried paint films. The focused ion beam in a FIB-SEM dual beam system enables great control in slicing paints, and the sectioning process can be synchronized with SEM imaging providing high quality serial cross-section images for 3D reconstruction. Application of Euclidean distance map and ultimate eroded points image analysis methods can provide quantitative characterization of 3D particle distribution. It is concluded that 3D measurement of binder distribution in paints is effective to characterize the order of pigment dispersion in dried paint films.

Multilayer ultra thick resist development for MEMS

NASA Astrophysics Data System (ADS)

Washio, Yasushi; Senzaki, Takahiro; Masuda, Yasuo; Saito, Koji; Obiya, Hiroyuki

2005-05-01

MEMS (Micro-Electro-Mechanical Systems) is achieved through a process technology, called Micro-machining. There are two distinct methods to manufacture a MEMS-product. One method is to form permanent film through photolithography, and the other is to form a non-permanent film resist after photolithography proceeded by etch or plating process. The three-dimensional ultra-fine processing technology based on photolithography, and is assembled by processes, such as anode junction, and post lithography processes such as etching and plating. Currently ORDYL PR-100 (Dry Film Type) is used for the permanent resist process. TOK has developed TMMR S2000 (Liquid Type) and TMMF S2000 (Dry Film Type) also. TOK has developed a new process utilizing these resist. The electro-forming method by photolithography is developed as one of the methods for enabling high resolution and high aspect formation. In recent years, it has become possible to manufacture conventionally difficult multilayer through our development with material and equipment project (M&E). As for material for electro-forming, it was checked that chemically amplified resist is optimal from the reaction mechanism as it is easily removed by the clean solution. Moreover, multiple plating formations were enabled with the resist through a new process. As for the equipment, TOK developed Applicator (It can apply 500 or more μms) and Developer, which achieves high throughput and quality. The detailed plating formations, which a path differs, and air wiring are realizable through M&E. From the above results, opposed to metallic mold plating, electro-forming method by resist, enabled to form high resolution and aspect pattern, at low cost. It is thought that the infinite possibility spreads by applying this process.

Growth and characterization of high quality ZnS thin films by RF sputtering

NASA Astrophysics Data System (ADS)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Silicon carbide - Progress in crystal growth

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

1987-01-01

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Apparatus and process for passivating an SRF cavity

DOEpatents

Myneni, Ganapati Rao; Wallace, John P

2014-12-02

An apparatus and process for the production of a niobium cavity exhibiting high quality factors at high gradients is provided. The apparatus comprises a first chamber positioned within a second chamber, an RF generator and vacuum pumping systems. The process comprises placing the niobium cavity in a first chamber of the apparatus; thermally treating the cavity by high temperature in the first chamber while maintaining high vacuum in the first and second chambers; and applying a passivating thin film layer to a surface of the cavity in the presence of a gaseous mixture and an RF field. Further a niobium cavity exhibiting high quality factors at high gradients produced by the method of the invention is provided.

TRIIG - Time-lapse reproduction of images through interactive graphics. [digital processing of quality hard copy

NASA Technical Reports Server (NTRS)

Buckner, J. D.; Council, H. W.; Edwards, T. R.

1974-01-01

Description of the hardware and software implementing the system of time-lapse reproduction of images through interactive graphics (TRIIG). The system produces a quality hard copy of processed images in a fast and inexpensive manner. This capability allows for optimal development of processing software through the rapid viewing of many image frames in an interactive mode. Three critical optical devices are used to reproduce an image: an Optronics photo reader/writer, the Adage Graphics Terminal, and Polaroid Type 57 high speed film. Typical sources of digitized images are observation satellites, such as ERTS or Mariner, computer coupled electron microscopes for high-magnification studies, or computer coupled X-ray devices for medical research.

High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

NASA Astrophysics Data System (ADS)

Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

2018-05-01

This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

Electronic Power System Application of Diamond-Like Carbon Films

NASA Technical Reports Server (NTRS)

Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

2003-01-01

A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

Direct Electrospray Printing of Gradient Refractive Index Chalcogenide Glass Films.

PubMed

Novak, Spencer; Lin, Pao Tai; Li, Cheng; Lumdee, Chatdanai; Hu, Juejun; Agarwal, Anuradha; Kik, Pieter G; Deng, Weiwei; Richardson, Kathleen

2017-08-16

A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer using an optimized electrospray (ES) deposition process. Using solution-derived glass precursors, IR-transparent Ge 23 Sb 7 S 70 and As 40 S 60 glass films of programmed thickness are fabricated to yield a bilayer structure, resulting in an effective gradient refractive index (GRIN) film. Optical and compositional analysis tools confirm the optical and physical nature of the gradient in the resulting high-optical-quality films, demonstrating the power of direct printing of multimaterial structures compatible with planar photonic fabrication protocols. The potential application of such tailorable materials and structures as they relate to the enhancement of sensitivity in chalcogenide glass based planar chemical sensor device design is presented. This method, applicable to a broad cross section of glass compositions, shows promise in directly depositing GRIN films with tunable refractive index profiles for bulk and planar optical components and devices.

Quantitative Appearance Inspection for Film Coated Tablets.

PubMed

Yoshino, Hiroyuki; Yamashita, Kazunari; Iwao, Yasunori; Noguchi, Shuji; Itai, Shigeru

2016-01-01

The decision criteria for the physical appearance of pharmaceutical products are subjective and qualitative means of evaluation that are based entirely on human interpretation. In this study, we have developed a comprehensive method for the quantitative analysis of the physical appearance of film coated tablets. Three different kinds of film coated tablets with considerable differences in their physical appearances were manufactured as models, and their surface roughness, contact angle, color measurements and physicochemical properties were investigated as potential characteristics for the quantitative analysis of their physical appearance. All of these characteristics were useful for the quantitative evaluation of the physical appearances of the tablets, and could potentially be used to establish decision criteria to assess the quality of tablets. In particular, the analysis of the surface roughness and film coating properties of the tablets by terahertz spectroscopy allowed for an effective evaluation of the tablets' properties. These results indicated the possibility of inspecting the appearance of tablets during the film coating process.

Optimized water vapor permeability of sodium alginate films using response surface methodology

NASA Astrophysics Data System (ADS)

Zhang, Qing; Xu, Jiachao; Gao, Xin; Fu, Xiaoting

2013-11-01

The water vapor permeability (WVP) of films is important when developing pharmaceutical applications. Films are frequently used as coatings, and as such directly influence the quality of the medicine. The optimization of processing conditions for sodium alginate films was investigated using response surface methodology. Single-factor tests and Box-Behnken experimental design were employed. WVP was selected as the response variable, and the operating parameters for the single-factor tests were sodium alginate concentration, carboxymethyl cellulose (CMC) concentration and CaCl2 solution immersion time. The coefficient of determination ( R 2) was 0.97, indicating statistical significance. A minimal WVP of 0.389 8 g·mm/(m2·h·kPa) was achieved under the optimum conditions. These were found to be a sodium alginate concentration, CMC concentration and CaCl2 solution immersion time at 8.04%, 0.13%, and 12 min, respectively. This provides a reference for potential applications in manufacturing film-coated hard capsule shells.

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and holes in GaN. Part II of the thesis describes studies of the MBE growth of ZnS and investigations of ZnS/GaN fight emitting heterojunctions which show promise for application as blue and green light emitters. Zinc sulfide layers doped with Ag and Al were grown by MBE on sapphire, GaAs, and GaN substrates and characterized by x-ray diffraction and photoluminescence. Preliminary current-voltage and electroluminescence results are presented for a processed ZnS:Al,Ag/GaN:Mg prototype blue light emitting device.

Sensitometric and image analysis of T-grain film.

PubMed

Thunthy, K H; Weinberg, R

1986-08-01

The new Kodak T-grain film is the result of a new technology that makes fast films with high image resolution. The purpose of the investigation was to determine the sensitometric properties and image quality of a T-grain film (T-Mat G) and also to compare this film with a green-sensitive orthochromatic film (Ortho G) and a blue-sensitive film (XRP). The criteria for film evaluation were relative speed, average contrast, exposure latitude, and image resolution. The results showed that the T-Mat G film is twice as fast as the X-Omat RP film and, one and one-third times as fast as the Ortho G film. T-Mat G also produces high resolution and high contrast. This is contrary to the widely held notion that speed is inversely proportional to image quality.

High-density plasma deposition manufacturing productivity improvement

NASA Astrophysics Data System (ADS)

Olmer, Leonard J.; Hudson, Chris P.

1999-09-01

High Density Plasma (HDP) deposition provides a means to deposit high quality dielectrics meeting submicron gap fill requirements. But, compared to traditional PECVD processing, HDP is relatively expensive due to the higher capital cost of the equipment. In order to keep processing costs low, it became necessary to maximize the wafer throughput of HDP processing without degrading the film properties. The approach taken was to optimize the post deposition microwave in-situ clean efficiency. A regression model, based on actual data, indicated that number of wafers processed before a chamber clean was the dominant factor. Furthermore, a design change in the ceramic hardware, surrounding the electrostatic chuck, provided thermal isolation resulting in an enhanced clean rate of the chamber process kit. An infra-red detector located in the chamber exhaust line provided a means to endpoint the clean and in-film particle data confirmed the infra-red results. The combination of increased chamber clean frequency, optimized clean time and improved process.

Pin-Hole Free Perovskite Film for Solar Cells Application Prepared by Controlled Two-Step Spin-Coating Method

NASA Astrophysics Data System (ADS)

Bahtiar, A.; Rahmanita, S.; Inayatie, Y. D.

2017-05-01

Morphology of perovskite film is a key important for achieving high performance perovskite solar cells. Perovskite films are commonly prepared by two-step spin-coating method. However, pin-holes are frequently formed in perovskite films due to incomplete conversion of lead-iodide (PbI2) into perovskite CH3NH3PbI3. Pin-holes in perovskite film cause large hysteresis in current-voltage curve of solar cells due to large series resistance between perovskite layer-hole transport material. Moreover, crystal structure and grain size of perovskite crystal are also other important parameters for achieving high performance solar cells, which are significantly affected by preparation of perovskite film. We studied the effect of preparation of perovskite film using controlled spin-coating parameters on crystal structure and morphological properties of perovskite film. We used two-step spin-coating method for preparation of perovskite film with varied spinning speed, spinning time and temperature of spin-coating process to control growth of perovskite crystal aimed to produce high quality perovskite crystal with pin-hole free and large grain size. All experiment was performed in air with high humidity (larger than 80%). The best crystal structure, pin-hole free with large grain crystal size of perovskite film was obtained from film prepared at room temperature with spinning speed 1000 rpm for 20 seconds and annealed at 100°C for 300 seconds.

Development of a templated approach to fabricate diamond patterns on various substrates.

PubMed

Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

2014-06-11

We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

PubMed

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

2016-04-01

Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.

Does a quality assurance training course on chest radiography for radiological technologists improve their performance in Laos?

PubMed

Ohkado, Akihiro; Mercader, Marvin; Date, Takuji

2017-01-01

It is of critical importance to improve and maintain the quality of chest radiography (CXR) to avoid faulty diagnosis of respiratory diseases. The study aims to determine the effectiveness of a training program in improving the quality of CXR among radiological technologists (RTs) in Laos. This was a cross-sectional study, conducted through on-site investigation of X-ray facilities, assessment of CXR films in Laos, both before and after a training course in November 2013. Each RT prospectively selected 6 recent CXR films, taken both before and within approximately 6 months of attending the training course. Consequently, 12 CXR films per RT were supposed to be collected for assessment. The quality of the CXR films was assessed using the "Assessment Sheet for Imaging Quality of Chest Radiography." Nineteen RTs from 19 facilities at 16 provinces in Laos participated in the training course. Among them, 17 RTs submitted the required set of CXR films (total: 204 films). A wide range of X-ray machine settings had been used as tube voltage ranged from 40 to 130 kV. The assessment of the CXR films indicated that the training was effective in improving the CXR quality regarding contrast (P = 0.005), sharpness (P = 0.004), and the total score on the 6 assessment factors (P = 0.009). The significant improvement in the total score on the 6 assessment factors, in contrast, and in sharpness, strongly suggests that the training course had a positive impact on the quality of CXR among a sample trainees of RTs in Laos.

Crystallization Dynamics of Organolead Halide Perovskite by Real-Time X-ray Diffraction.

PubMed

Miyadera, Tetsuhiko; Shibata, Yosei; Koganezawa, Tomoyuki; Murakami, Takurou N; Sugita, Takeshi; Tanigaki, Nobutaka; Chikamatsu, Masayuki

2015-08-12

We analyzed the crystallization process of the CH3NH3PbI3 perovskite by observing real-time X-ray diffraction immediately after combining a PbI2 thin film with a CH3NH3I solution. A detailed analysis of the transformation kinetics demonstrated the fractal diffusion of the CH3NH3I solution into the PbI2 film. Moreover, the perovskite crystal was found to be initially oriented based on the PbI2 crystal orientation but to gradually transition to a random orientation. The fluctuating characteristics of the crystallization process of perovskites, such as fractal penetration and orientational transformation, should be controlled to allow the fabrication of high-quality perovskite crystals. The characteristic reaction dynamics observed in this study should assist in establishing reproducible fabrication processes for perovskite solar cells.

Localized traveling ionization zones and their importance for the high power impulse magnetron sputtering process

NASA Astrophysics Data System (ADS)

Maszl, Christian

2016-09-01

High power impulse magnetron sputtering (HiPIMS) is a technique to deposit thin films with superior quality. A high ionization degree up to 90% and the natural occurence of high energetic metal ions are the reason why HiPIMS exceeds direct current magnetron sputtering in terms of coating quality. On the other hand HiPIMS suffers from a reduced efficiency, especially if metal films are produced. Therefore, a lot of research is done by experimentalists and theoreticians to clarify the transport mechanisms from target to substrate and to identify the energy source of the energetic metal ions. Magnetron plasmas are prone to a wide range of wave phenomena and instabilities. Especially, during HiPIMS at elevated power/current densities, symmetry breaks and self-organization in the plasma torus are observed. In this scenario localized travelling ionization zones with certain quasi-mode numbers are present which are commonly referred to as spokes. Because of their high rotation speed compared to typical process times of minutes their importance for thin film deposition was underestimated at first. Recent investigations show that spokes have a strong impact on particle transport, are probably the source of the high energetic metal ions and are therefore the essence of HiPIMS plasmas. In this contribution we will describe the current understanding of spokes, discuss implications for thin film synthesis and highlight open questions. This project is supported by the DFG (German Science Foundation) within the framework of the Coordinated Research Center SFB-TR 87 and the Research Department ``Plasmas with Complex Interactions'' at Ruhr-University Bochum.

Influence of annealing temperature on structural and optical properties of Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} transparent films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morales-Ramírez, Ángel de Jesús; García-Murillo, Antonieta, E-mail: angarciam@ipn.mx; Carrillo-Romo, Felipe de Jesús

2015-10-15

Highlights: • Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} films were synthesized by sol–gel and by dip-coating technique. • Effects of annealing treatment on structural and optical properties were studied. • Optogeometrical characteristics of synthesized films were analyzed. • X-ray diffraction results showed that Lu{sub 2}O{sub 3}:Eu{sup 3+}, Tb{sup 3+} crystallizes at 700 °C. • High reddish emission on transparent films with at least 1 μm thick was observed. - Abstract: High-optical quality Lu{sub 2}O{sub 3}:Eu{sup 3+} 5 mol%, X Tb{sup 3+} (X = 0–0.04 mol%) thin films were prepared by the sol–gel process and dip-coating technique. The procedure was asmore » follows: lutetium, europium and terbium nitrates were used as precursors, and ethanol as a solvent. Etylenglycol (EG) was added as a sol stabilizer, and the pH was adjusted by acetic acid. After 10 dipping-cycles, followed by an annealing process (600–900 °C) for 1 h, transparent, smooth and crack-free films (ra = 8–9 nm) were formed. The X-ray diffraction (XRD) results showed crystallized films into the cubic structure at 800 °C. The ellipsometry results showed that the thickness of the films varied from 1 to 1.4 μm at 1000 and 600 °C, respectively. Finally, the films presented a typical Eu{sup 3+} red emission at 611 nm ({sup 5}D{sub 0} → {sup 7}F{sub 2}); furthermore, the effect of the Tb{sup 3+} content showed that the highest emission intensity corresponded to the lower Tb{sup 3+} content.« less

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Enhanced mobility CsPbI 3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.

Here, we developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (V OC's) than thin-film perovskites. CsPbI 3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small V OC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions atmore » the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.« less

Facile and Scalable Fabrication of Highly Efficient Lead Iodide Perovskite Thin-Film Solar Cells in Air Using Gas Pump Method.

PubMed

Ding, Bin; Gao, Lili; Liang, Lusheng; Chu, Qianqian; Song, Xiaoxuan; Li, Yan; Yang, Guanjun; Fan, Bin; Wang, Mingkui; Li, Chengxin; Li, Changjiu

2016-08-10

Control of the perovskite film formation process to produce high-quality organic-inorganic metal halide perovskite thin films with uniform morphology, high surface coverage, and minimum pinholes is of great importance to highly efficient solar cells. Herein, we report on large-area light-absorbing perovskite films fabrication with a new facile and scalable gas pump method. By decreasing the total pressure in the evaporation environment, the gas pump method can significantly enhance the solvent evaporation rate by 8 times faster and thereby produce an extremely dense, uniform, and full-coverage perovskite thin film. The resulting planar perovskite solar cells can achieve an impressive power conversion efficiency up to 19.00% with an average efficiency of 17.38 ± 0.70% for 32 devices with an area of 5 × 2 mm, 13.91% for devices with a large area up to 1.13 cm(2). The perovskite films can be easily fabricated in air conditions with a relative humidity of 45-55%, which definitely has a promising prospect in industrial application of large-area perovskite solar panels.

Enhanced mobility CsPbI 3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

DOE PAGES

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; ...

2017-10-27

Here, we developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (V OC's) than thin-film perovskites. CsPbI 3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small V OC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions atmore » the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.« less

Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

2017-03-01

High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

NASA Astrophysics Data System (ADS)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.

X-ray diffraction and X-ray standing-wave study of the lead stearate film structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blagov, A. E.; Dyakova, Yu. A.; Kovalchuk, M. V.

2016-05-15

A new approach to the study of the structural quality of crystals is proposed. It is based on the use of X-ray standing-wave method without measuring secondary processes and considers the multiwave interaction of diffraction reflections corresponding to different harmonics of the same crystallographic reflection. A theory of multiwave X-ray diffraction is developed to calculate the rocking curves in the X-ray diffraction scheme under consideration for a long-period quasi-one-dimensional crystal. This phase-sensitive method is used to study the structure of a multilayer lead stearate film on a silicon substrate. Some specific structural features are revealed for the surface layer ofmore » the thin film, which are most likely due to the tilt of the upper layer molecules with respect to the external normal to the film surface.« less

Fabrication and radio frequency test of large-area MgB 2 films on niobium substrates

DOE PAGES

Ni, Zhimao; Guo, Xin; Welander, Paul B.; ...

2017-01-19

Magnesium diboride (MgB 2) is a promising candidate material for superconducting radio frequency (RF) cavities because of its higher transition temperature and critical field compared with niobium. To meet the demand of RF test devices, the fabrication of large-area MgB 2 films on metal substrates is needed. Here, in this work, high quality MgB 2 films with 50 mm diameter were fabricated on niobium by using an improved HPCVD system at Peking University, and RF tests were carried out at SLAC National Accelerator Laboratory. The transition temperature is approximately 39.6 K and the RF surface resistance is about 120 μΩmore » at 4 K and 11.4 GHz. Finally, the fabrication processes, surface morphology, DC superconducting properties and RF tests of these large-area MgB 2 films are presented.« less

Fabrication and radio frequency test of large-area MgB 2 films on niobium substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ni, Zhimao; Guo, Xin; Welander, Paul B.

Magnesium diboride (MgB 2) is a promising candidate material for superconducting radio frequency (RF) cavities because of its higher transition temperature and critical field compared with niobium. To meet the demand of RF test devices, the fabrication of large-area MgB 2 films on metal substrates is needed. Here, in this work, high quality MgB 2 films with 50 mm diameter were fabricated on niobium by using an improved HPCVD system at Peking University, and RF tests were carried out at SLAC National Accelerator Laboratory. The transition temperature is approximately 39.6 K and the RF surface resistance is about 120 μΩmore » at 4 K and 11.4 GHz. Finally, the fabrication processes, surface morphology, DC superconducting properties and RF tests of these large-area MgB 2 films are presented.« less

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

NASA Astrophysics Data System (ADS)

Withanage, Wenura K.; Penmatsa, Sashank V.; Acharya, Narendra; Melbourne, Thomas; Cunnane, D.; Karasik, B. S.; Xi, X. X.

2018-07-01

We report on the growth of high quality MgB2 thin films on silicon and silicon-on-insulator substrates by hybrid physical chemical vapor deposition. A boron buffer layer was deposited on all sides of the Si substrate to prevent the reaction of Mg vapor and Si. Ar ion milling at a low angle of 1° was used to reduce the roughness of the boron buffer layer before the MgB2 growth. An Ar ion milling at low angle of 1° was also applied to the MgB2 surface to reduce its roughness. The resultant MgB2 films showed excellent superconducting properties and a smooth surface. The process produces thin MgB2 films suitable for waveguide-based superconducting hot electron bolometers and other MgB2-based electronic devices.

Schlieren technique in soap film flows

NASA Astrophysics Data System (ADS)

Auliel, M. I.; Hebrero, F. Castro; Sosa, R.; Artana, G.

2017-05-01

We propose the use of the Schlieren technique as a tool to analyse the flows in soap film tunnels. The technique enables to visualize perturbations of the film produced by the interposition of an object in the flow. The variations of intensity of the image are produced as a consequence of the deviations of the light beam traversing the deformed surfaces of the film. The quality of the Schlieren image is compared to images produced by the conventional interferometric technique. The analysis of Schlieren images of a cylinder wake flow indicates that this technique enables an easy visualization of vortex centers. Post-processing of series of two successive images of a grid turbulent flow with a dense motion estimator is used to derive the velocity fields. The results obtained with this self-seeded flow show good agreement with the statistical properties of the 2D turbulent flows reported on the literature.

Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone.

PubMed

Nanayakkara, Charith E; Liu, Guo; Vega, Abraham; Dezelah, Charles L; Kanjolia, Ravindra K; Chabal, Yves J

2017-06-20

Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting electrodes. Thermal atomic layer deposition (ALD) is often best suited for these applications, but its implementation requires a mechanistic understanding of the initial nucleation and subsequent ALD processes. To this end, in situ FTIR and ex situ XPS have been used to explore the ALD of tin oxide films using tributyltin ethoxide and ozone on an OH-terminated, SiO 2 -passivated Si(111) substrate. Direct chemisorption of tributyltin ethoxide on surface OH groups and clear evidence that subsequent ligand exchange are obtained, providing mechanistic insight. Upon ozone pulse, the butyl groups react with ozone, forming surface carbonate and formate. The subsequent tributyltin ethoxide pulse removes the carbonate and formate features with the appearance of the bands for CH stretching and bending modes of the precursor butyl ligands. This ligand-exchange behavior is repeated for subsequent cycles, as is characteristic of ALD processes, and is clearly observed for deposition temperatures of 200 and 300 °C. On the basis of the in situ vibrational data, a reaction mechanism for the ALD process of tributyltin ethoxide and ozone is presented, whereby ligands are fully eliminated. Complementary ex situ XPS depth profiles confirm that the bulk of the films is carbon-free, that is, formate and carbonate are not incorporated into the film during the deposition process, and that good-quality SnO x films are produced. Furthermore, the process was scaled up in a cross-flow reactor at 225 °C, which allowed the determination of the growth rate (0.62 Å/cycle) and confirmed a self-limiting ALD growth at 225 and 268 °C. An analysis of the temperature-dependence data reveals that growth rate increases linearly between 200 and 300 °C.

Calibration of GafChromic XR-RV3 radiochromic film for skin dose measurement using standardized x-ray spectra and a commercial flatbed scanner.

PubMed

McCabe, Bradley P; Speidel, Michael A; Pike, Tina L; Van Lysel, Michael S

2011-04-01

In this study, newly formulated XR-RV3 GafChromic film was calibrated with National Institute of Standards and Technology (NIST) traceability for measurement of patient skin dose during fluoroscopically guided interventional procedures. The film was calibrated free-in-air to air kerma levels between 15 and 1100 cGy using four moderately filtered x-ray beam qualities (60, 80, 100, and 120 kVp). The calibration films were scanned with a commercial flatbed document scanner. Film reflective density-to-air kerma calibration curves were constructed for each beam quality, with both the orange and white sides facing the x-ray source. A method to correct for nonuniformity in scanner response (up to 25% depending on position) was developed to enable dose measurement with large films. The response of XR-RV3 film under patient backscattering conditions was examined using on-phantom film exposures and Monte Carlo simulations. The response of XR-RV3 film to a given air kerma depended on kVp and film orientation. For a 200 cGy air kerma exposure with the orange side of the film facing the source, the film response increased by 20% from 60 to 120 kVp. At 500 cGy, the increase was 12%. When 500 cGy exposures were performed with the white side facing the x-ray source, the film response increased by 4.0% (60 kVp) to 9.9% (120 kVp) compared to the orange-facing orientation. On-phantom film measurements and Monte Carlo simulations show that using a NIST-traceable free-in-air calibration curve to determine air kerma in the presence of backscatter results in an error from 2% up to 8% depending on beam quality. The combined uncertainty in the air kerma measurement from the calibration curves and scanner nonuniformity correction was +/- 7.1% (95% C.I.). The film showed notable stability. Calibrations of film and scanner separated by 1 yr differed by 1.0%. XR-RV3 radiochromic film response to a given air kerma shows dependence on beam quality and film orientation. The presence of backscatter slightly modifies the x-ray energy spectrum; however, the increase in film response can be attributed primarily to the increase in total photon fluence at the sensitive layer. Film calibration curves created under free-in-air conditions may be used to measure dose from fluoroscopic quality x-ray beams, including patient backscatter with an error less than the uncertainty of the calibration in most cases.

SU-F-T-486: A Simple Approach to Performing Light Versus Radiation Field Coincidence Quality Assurance Using An Electronic Portal Imaging Device (EPID)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herchko, S; Ding, G

2016-06-15

Purpose: To develop an accurate, straightforward, and user-independent method for performing light versus radiation field coincidence quality assurance utilizing EPID images, a simple phantom made of readily-accessible materials, and a free software program. Methods: A simple phantom consisting of a blocking tray, graph paper, and high-density wire was constructed. The phantom was used to accurately set the size of a desired light field and imaged on the electronic portal imaging device (EPID). A macro written for use in ImageJ, a free image processing software, was then use to determine the radiation field size utilizing the high density wires on themore » phantom for a pixel to distance calibration. The macro also performs an analysis on the measured radiation field utilizing the tolerances recommended in the AAPM Task Group #142. To verify the accuracy of this method, radiochromic film was used to qualitatively demonstrate agreement between the film and EPID results, and an additional ImageJ macro was used to quantitatively compare the radiation field sizes measured both with the EPID and film images. Results: The results of this technique were benchmarked against film measurements, which have been the gold standard for testing light versus radiation field coincidence. The agreement between this method and film measurements were within 0.5 mm. Conclusion: Due to the operator dependency associated with tracing light fields and measuring radiation fields by hand when using film, this method allows for a more accurate comparison between the light and radiation fields with minimal operator dependency. Removing the need for radiographic or radiochromic film also eliminates a reoccurring cost and increases procedural efficiency.« less

Quantitative analysis of visible surface defect risk in tablets during film coating using terahertz pulsed imaging.

PubMed

Niwa, Masahiro; Hiraishi, Yasuhiro

2014-01-30

Tablets are the most common form of solid oral dosage produced by pharmaceutical industries. There are several challenges to successful and consistent tablet manufacturing. One well-known quality issue is visible surface defects, which generally occur due to insufficient physical strength, causing breakage or abrasion during processing, packaging, or shipping. Techniques that allow quantitative evaluation of surface strength and the risk of surface defect would greatly aid in quality control. Here terahertz pulsed imaging (TPI) was employed to evaluate the surface properties of core tablets with visible surface defects of varying severity after film coating. Other analytical methods, such as tensile strength measurements, friability testing, and scanning electron microscopy (SEM), were used to validate TPI results. Tensile strength and friability provided no information on visible surface defect risk, whereas the TPI-derived unique parameter terahertz electric field peak strength (TEFPS) provided spatial distribution of surface density/roughness information on core tablets, which helped in estimating tablet abrasion risk prior to film coating and predicting the location of the defects. TPI also revealed the relationship between surface strength and blending condition and is a nondestructive, quantitative approach to aid formulation development and quality control that can reduce visible surface defect risk in tablets. Copyright © 2013 Elsevier B.V. All rights reserved.

Achieving High Performance Perovskite Solar Cells

NASA Astrophysics Data System (ADS)

Yang, Yang

2015-03-01

Recently, metal halide perovskite based solar cell with the characteristics of rather low raw materials cost, great potential for simple process and scalable production, and extreme high power conversion efficiency (PCE), have been highlighted as one of the most competitive technologies for next generation thin film photovoltaic (PV). In UCLA, we have realized an efficient pathway to achieve high performance pervoskite solar cells, where the findings are beneficial to this unique materials/devices system. Our recent progress lies in perovskite film formation, defect passivation, transport materials design, interface engineering with respect to high performance solar cell, as well as the exploration of its applications beyond photovoltaics. These achievements include: 1) development of vapor assisted solution process (VASP) and moisture assisted solution process, which produces perovskite film with improved conformity, high crystallinity, reduced recombination rate, and the resulting high performance; 2) examination of the defects property of perovskite materials, and demonstration of a self-induced passivation approach to reduce carrier recombination; 3) interface engineering based on design of the carrier transport materials and the electrodes, in combination with high quality perovskite film, which delivers 15 ~ 20% PCEs; 4) a novel integration of bulk heterojunction to perovskite solar cell to achieve better light harvest; 5) fabrication of inverted solar cell device with high efficiency and flexibility and 6) exploration the application of perovskite materials to photodetector. Further development in film, device architecture, and interfaces will lead to continuous improved perovskite solar cells and other organic-inorganic hybrid optoelectronics.

75 FR 59084 - Approval and Promulgation of Air Quality Implementation Plans; Maryland; Control Technique...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-09-27

... Promulgation of Air Quality Implementation Plans; Maryland; Control Technique Guidelines for Paper, Film, and... from paper, film, and foil coatings. Specifically, Maryland is amending its regulations by adopting the requirements of EPA's Control Technique Guidelines (CTG) for Paper, Film, and Foil Coatings. These amendments...

Clinical comparison of CR and screen film for imaging the critically ill neonate

NASA Astrophysics Data System (ADS)

Andriole, Katherine P.; Brasch, Robert C.; Gooding, Charles A.; Gould, Robert G.; Cohen, Pierre A.; Rencken, Ingo R.; Huang, H. K.

1996-05-01

A clinical comparison of computed radiography (CR) versus screen-film for imaging the critically-ill neonate is performed, utilizing a modified (hybrid) film cassette containing a CR (standard ST-V) imaging plate, a conventional screen and film, allowing simultaneous acquisition of perfectly matched CR and plain film images. For 100 portable neonatal chest and abdominal projection radiographs, plain film was subjectively compared to CR hardcopy. Three pediatric radiologists graded overall image quality on a scale of one (poor) to five (excellent), as well as visualization of various anatomic structures (i.e., lung parenchyma, pulmonary vasculature, tubes/lines) and pathological findings (i.e., pulmonary interstitial emphysema, pleural effusion, pneumothorax). Results analyzed using a combined kappa statistic of the differences between scores from each matched set, combined over the three readers showed no statistically significant difference in overall image quality between screen- film and CR (p equals 0.19). Similarly, no statistically significant difference was seen between screen-film and CR for anatomic structure visualization and for visualization of pathological findings. These results indicate that the image quality of CR is comparable to plain film, and that CR may be a suitable alternative to screen-film imaging for portable neonatal chest and abdominal examinations.

Edible films and coatings in seafood preservation: A review.

PubMed

Dehghani, Samira; Hosseini, Seyed Vali; Regenstein, Joe M

2018-02-01

Seafood is highly perishable and has a short shelf-life. During storage many reactions occur leading to changes in quality such as endogenous chemical and enzymatic reactions. The safety and shelf-life are related to the presence of food spoilage and pathogenic microorganisms. Despite improved manufacturing facilities and implementation of effective process control procedures such as the Hazard Analysis Critical Control Point system by seafood companies, the number of seafood-related foodborne illnesses has increased. Edible coatings can improve the quality of fresh and frozen products by retarding microbial growth, reducing lipid oxidation and moisture loss, and functioning as a carrier of food additives such as antimicrobial and antioxidant agents. Biodegradable edible coatings have various advantages over synthetic coatings such as being edible and generally being more environmentally friendly. This paper reviews the application of various types of natural bio-polymer and different active ingredients incorporated into the films and their effects on seafood quality attributes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Performance comparison of an active matrix flat panel imager, computed radiography system, and a screen-film system at four standard radiation qualities.

PubMed

Monnin, P; Gutierrez, D; Bulling, S; Lepori, D; Valley, J F; Verdun, F R

2005-02-01

Four standard radiation qualities (from RQA 3 to RQA 9) were used to compare the imaging performance of a computed radiography (CR) system (general purpose and high resolution phosphor plates of a Kodak CR 9000 system), a selenium-based direct flat panel detector (Kodak Direct View DR 9000), and a conventional screen-film system (Kodak T-MAT L/RA film with a 3M Trimax Regular screen of speed 400) in conventional radiography. Reference exposure levels were chosen according to the manufacturer's recommendations to be representative of clinical practice (exposure index of 1700 for digital systems and a film optical density of 1.4). With the exception of the RQA 3 beam quality, the exposure levels needed to produce a mean digital signal of 1700 were higher than those needed to obtain a mean film optical density of 1.4. In spite of intense developments in the field of digital detectors, screen-film systems are still very efficient detectors for most of the beam qualities used in radiology. An important outcome of this study is the behavior of the detective quantum efficiency of the digital radiography (DR) system as a function of beam energy. The practice of users to increase beam energy when switching from a screen-film system to a CR system, in order to improve the compromise between patient dose and image quality, might not be appropriate when switching from screen-film to selenium-based DR systems.

Transparent conducting oxides and production thereof

DOEpatents

Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

2014-06-10

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Evaluation of heat shrinkable films for shelf life, and quality of individually wrapped Royal Delicious apples under ambient conditions.

PubMed

Sharma, R R; Pal, R K; Singh, D; Samuel, D V K; Sethi, S; Kumar, A

2013-06-01

Effect of heat shrinkable films on shelf life and quality of apples under ambient conditions was studied. Fully mature Royal Delicious apples (starch index 2.5 on 4.0 point scale) were either shrink-wrapped in 3 heat shrinkable films like Cryovac (9 μ), polyolefin (13 μ) and LDPE (25 μ) or were not wrapped at all (control) and then stored at ambient conditions (22-28°C and 52-68% RH). Observations on physiological loss in weight (PLW), decay loss, firmness, juice recovery, total soluble solids (TSS), acidity, ascorbic acid content and overall sensory quality were recorded immediately before packing, and after packing at weekly intervals. Best results were obtained with Cryovac (9 μ) films, which exhibited least PLW (2.3%) and decay loss (2.8%) and higher juice recovery (65.2%) and TSS (16.4%) over other films or control. Apples wrapped in Cryovac films also had higher overall sensory acceptability (8.3 out of 9) over other films or control. These studies indicated that apples could be very well packed in Cryovac heat shrinkable films for about 35 days with least PLW or decay loss, and without any adverse effect on fruit quality.

Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

NASA Astrophysics Data System (ADS)

Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

2016-08-01

This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils

PubMed Central

Gao, Yang; Liu, Zhibo; Sun, Dong-Ming; Huang, Le; Ma, Lai-Peng; Yin, Li-Chang; Ma, Teng; Zhang, Zhiyong; Ma, Xiu-Liang; Peng, Lian-Mao; Cheng, Hui-Ming; Ren, Wencai

2015-01-01

Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays. PMID:26450174

Oromucosal multilayer films for tailor-made, controlled drug delivery.

PubMed

Lindert, Sandra; Breitkreutz, Jörg

2017-11-01

The oral mucosa has recently become increasingly important as an alternative administration route for tailor-made, controlled drug delivery. Oromucosal multilayer films, assigned to the monograph oromucosal preparations in the Ph.Eur. may be a promising dosage form to overcome the requirements related to this drug delivery site. Areas covered: We provide an overview of multilayer films as drug delivery tools, and discuss manufacturing processes and characterization methods. We focus on the suitability of characterization methods for particular requirements of multilayer films. A classification was performed covering indication areas and APIs incorporated in multilayer film systems for oromucosal use in order to provide a summary of data published in this field. Expert opinion: The shift in drug development to high molecular weight drugs will influence the field of pharmaceutical development and delivery technologies. For a high number of indication areas, such as hormonal disorders, cardiovascular diseases or local treatment of infections, the flexible layer design of oromucosal multilayer films provides a promising option for tailor-made, controlled delivery of APIs to or through defined surfaces in the oral cavity. However, there is a lack of discriminating or standardized testing methods to assess the quality of multilayer films in a reliable way.

Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations

NASA Astrophysics Data System (ADS)

Bai, Xiaoyuan; Shuai, Yao; Gong, Chaoguan; Wu, Chuangui; Luo, Wenbo; Böttger, Roman; Zhou, Shengqiang; Zhang, Wanli

2018-03-01

Single crystalline 128°Y-cut LiNbO3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO3 thin films are modified by low energy Ar+ irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar+ irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar+ irradiation. A two-stage etching mechanism by Ar+ irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

Multilayer thin-film phantoms for axial contrast transfer function measurement in optical coherence tomography.

PubMed

Agrawal, Anant; Chen, Chao-Wei; Baxi, Jigesh; Chen, Yu; Pfefer, T Joshua

2013-07-01

In optical coherence tomography (OCT), axial resolution is one of the most critical parameters impacting image quality. It is commonly measured by determining the point spread function (PSF) based on a specular surface reflection. The contrast transfer function (CTF) provides more insights into an imaging system's resolving characteristics and can be readily generated in a system-independent manner, without consideration for image pixel size. In this study, we developed a test method for determination of CTF based on multi-layer, thin-film phantoms, evaluated using spectral- and time-domain OCT platforms with different axial resolution values. Phantoms representing six spatial frequencies were fabricated and imaged. The fabrication process involved spin coating silicone films with precise thicknesses in the 8-40 μm range. Alternating layers were doped with a specified concentration of scattering particles. Validation of layer optical properties and thicknesses were achieved with spectrophotometry and stylus profilometry, respectively. OCT B-scans were used to calculate CTFs and results were compared with convetional PSF measurements based on specular reflections. Testing of these phantoms indicated that our approach can provide direct access to axial resolution characteristics highly relevant to image quality. Furthermore, tissue phantoms based on our thin-film fabrication approach may have a wide range of additional applications in optical imaging and spectroscopy.

Epitaxial growth of mixed conducting layered Ruddlesden–Popper La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) phases by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J., E-mail: s.skinner@imperial.ac.uk

2013-10-15

Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO{sub 3} and NdGaO{sub 3} substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) have been epitaxially grown on SrTiO{sub 3} (0 0 1) or NdGaO{sub 3} (1 1 0) singlemore » crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time.« less

Dermal wound healing processes with curcumin incorporated collagen films.

PubMed

Gopinath, D; Ahmed, M Rafiuddin; Gomathi, K; Chitra, K; Sehgal, P K; Jayakumar, R

2004-05-01

The wound healing process involves extensive oxidative stress to the system, which generally inhibits tissue remodeling. In the present study, an improvement in the quality of wound healing was attempted by slow delivery of antioxidants like curcumin from collagen, which also acts as a supportive matrix for the regenerative tissue. Curcumin incorporated collagen matrix (CICM) treated groups were compared with control and collagen treated rats. Biochemical parameters and histological analysis revealed that increased wound reduction, enhanced cell proliferation and efficient free radical scavenging in CICM group. The higher shrinkage temperature of CICM films suggests increased hydrothermal stability when compared to normal collagen films. Spectroscopic studies revealed that curcumin was bound to the collagen without affecting its triple helicity. Further we adopted the antioxidant assay using 2,2'-azobisisobutyronitrile to assess in vitro antioxidant activity of CICM. The antioxidant studies indicated that CICM quenches free radicals more efficiently. This study provides a rationale for the topical application of CICM as a feasible and productive approach to support dermal wound healing.

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model.

PubMed

Currie, Marc; Mastro, Michael A; Wheeler, Virginia D

2018-05-23

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10 -4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

Multiphonon Raman scattering and photoluminescence studies of CdS nanocrystals grown by thermal evaporation

NASA Astrophysics Data System (ADS)

Farid, Sidra; Stroscio, Michael A.; Dutta, Mitra

2018-03-01

Thermal evaporation growth technique is presented as a route to grow cost effective high quality CdS thin films. We have successfully grown high quality CdS thin films on ITO coated glass substrates by thermal evaporation technique and analyzed the effects of annealing and excitation dependent input of CdS thin film using Raman and photoluminescence spectroscopy. LO phonon modes have been analyzed quantitatively considering the contributions due to anneal induced effects on film quality using phonon spatial correlation model, line shape and defect state analysis. Asymmetry in the Raman line shape towards the low frequency side is related to the phonon confinement effects and is modeled by spatial correlation model. Calculations of width (FWHM), integrated intensity, and line shape for the longitudinal (LO) optical phonon modes indicate improved crystalline quality for the annealed films as compared to the as grown films. With increase in laser power, intensity ratio of 2-LO to 1-LO optical phonon modes is found to increase while multiple overtones upto fourth order are observed. Power dependent photoluminescence data indicates direct band-to-band transition in CdS thin films.

Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

PubMed Central

Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; Li, Wenzhe; Wang, Liduo; Ginger, David S.; Friend, Richard H.; Snaith, Henry J.

2015-01-01

Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 back into I−, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead. PMID:26615763

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCabe, Bradley P.; Speidel, Michael A.; Pike, Tina L.

Purpose: In this study, newly formulated XR-RV3 GafChromic film was calibrated with National Institute of Standards and Technology (NIST) traceability for measurement of patient skin dose during fluoroscopically guided interventional procedures. Methods: The film was calibrated free-in-air to air kerma levels between 15 and 1100 cGy using four moderately filtered x-ray beam qualities (60, 80, 100, and 120 kVp). The calibration films were scanned with a commercial flatbed document scanner. Film reflective density-to-air kerma calibration curves were constructed for each beam quality, with both the orange and white sides facing the x-ray source. A method to correct for nonuniformity inmore » scanner response (up to 25% depending on position) was developed to enable dose measurement with large films. The response of XR-RV3 film under patient backscattering conditions was examined using on-phantom film exposures and Monte Carlo simulations. Results: The response of XR-RV3 film to a given air kerma depended on kVp and film orientation. For a 200 cGy air kerma exposure with the orange side of the film facing the source, the film response increased by 20% from 60 to 120 kVp. At 500 cGy, the increase was 12%. When 500 cGy exposures were performed with the white side facing the x-ray source, the film response increased by 4.0% (60 kVp) to 9.9% (120 kVp) compared to the orange-facing orientation. On-phantom film measurements and Monte Carlo simulations show that using a NIST-traceable free-in-air calibration curve to determine air kerma in the presence of backscatter results in an error from 2% up to 8% depending on beam quality. The combined uncertainty in the air kerma measurement from the calibration curves and scanner nonuniformity correction was {+-}7.1% (95% C.I.). The film showed notable stability. Calibrations of film and scanner separated by 1 yr differed by 1.0%. Conclusions: XR-RV3 radiochromic film response to a given air kerma shows dependence on beam quality and film orientation. The presence of backscatter slightly modifies the x-ray energy spectrum; however, the increase in film response can be attributed primarily to the increase in total photon fluence at the sensitive layer. Film calibration curves created under free-in-air conditions may be used to measure dose from fluoroscopic quality x-ray beams, including patient backscatter with an error less than the uncertainty of the calibration in most cases.« less

Automated x-ray/light field congruence using the LINAC EPID panel.

PubMed

Polak, Wojciech; O'Doherty, Jim; Jones, Matt

2013-03-01

X-ray/light field alignment is a test described in many guidelines for the routine quality control of clinical linear accelerators (LINAC). Currently, the gold standard method for measuring alignment is through utilization of radiographic film. However, many modern LINACs are equipped with an electronic portal imaging device (EPID) that may be used to perform this test and thus subsequently reducing overall cost, processing, and analysis time, removing operator dependency and the requirement to sustain the departmental film processor. This work describes a novel method of utilizing the EPID together with a custom inhouse designed jig and automatic image processing software allowing measurement of the light field size, x-ray field size, and congruence between them. The authors present results of testing the method for aS1000 and aS500 Varian EPID detectors for six LINACs at a range of energies (6, 10, and 15 MV) in comparison with the results obtained from the use of radiographic film. Reproducibility of the software in fully automatic operation under a range of operating conditions for a single image showed a congruence of 0.01 cm with a coefficient of variation of 0. Slight variation in congruence repeatability was noted through semiautomatic processing by four independent operators due to manual marking of positions on the jig. Testing of the methodology using the automatic method shows a high precision of 0.02 mm compared to a maximum of 0.06 mm determined by film processing. Intraindividual examination of operator measurements of congruence was shown to vary as much as 0.75 mm. Similar congruence measurements of 0.02 mm were also determined for a lower resolution EPID (aS500 model), after rescaling of the image to the aS1000 image size. The designed methodology was proven to be time efficient, cost effective, and at least as accurate as using the gold standard radiographic film. Additionally, congruence testing can be easily performed for all four cardinal gantry angles which can be difficult when using radiographic film. Therefore, the authors propose it can be used as an alternative to the radiographic film method allowing decommissioning of the film processor.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Numerical Prediction of the Influence of Process Parameters on Large Area Diamond Deposition by DC Arcjet with ARC Roots Rotating and Operating at Gas Recycling Mode

NASA Astrophysics Data System (ADS)

Lu, F. X.; Huang, T. B.; Tang, W. Z.; Song, J. H.; Tong, Y. M.

A computer model have been set up for simulation of the flow and temperature field, and the radial distribution of atomic hydrogen and active carbonaceous species over a large area substrate surface for a new type dc arc plasma torch with rotating arc roots and operating at gas recycling mode A gas recycling radio of 90% was assumed. In numerical calculation of plasma chemistry, the Thermal-Calc program and a powerful thermodynamic database were employed. Numerical calculations to the computer model were performed using boundary conditions close to the experimental setup for large area diamond films deposition. The results showed that the flow and temperature field over substrate surface of Φ60-100mm were smooth and uniform. Calculations were also made with plasma of the same geometry but no arc roots rotation. It was clearly demonstrated that the design of rotating arc roots was advantageous for high quality uniform deposition of large area diamond films. Theoretical predictions on growth rate and film quality as well as their radial uniformity, and the influence of process parameters on large area diamond deposition were discussed in detail based on the spatial distribution of atomic hydrogen and the carbonaceous species in the plasma over the substrate surface obtained from thermodynamic calculations of plasma chemistry, and were compared with experimental observations.

Design of Experiments to Study the Impact of Process Parameters on Droplet Size and Development of Non-Invasive Imaging Techniques in Tablet Coating

PubMed Central

Dennison, Thomas J.; Smith, Julian; Hofmann, Michael P.; Bland, Charlotte E.; Badhan, Raj K.; Al-Khattawi, Ali; Mohammed, Afzal R.

2016-01-01

Atomisation of an aqueous solution for tablet film coating is a complex process with multiple factors determining droplet formation and properties. The importance of droplet size for an efficient process and a high quality final product has been noted in the literature, with smaller droplets reported to produce smoother, more homogenous coatings whilst simultaneously avoiding the risk of damage through over-wetting of the tablet core. In this work the effect of droplet size on tablet film coat characteristics was investigated using X-ray microcomputed tomography (XμCT) and confocal laser scanning microscopy (CLSM). A quality by design approach utilising design of experiments (DOE) was used to optimise the conditions necessary for production of droplets at a small (20 μm) and large (70 μm) droplet size. Droplet size distribution was measured using real-time laser diffraction and the volume median diameter taken as a response. DOE yielded information on the relationship three critical process parameters: pump rate, atomisation pressure and coating-polymer concentration, had upon droplet size. The model generated was robust, scoring highly for model fit (R2 = 0.977), predictability (Q2 = 0.837), validity and reproducibility. Modelling confirmed that all parameters had either a linear or quadratic effect on droplet size and revealed an interaction between pump rate and atomisation pressure. Fluidised bed coating of tablet cores was performed with either small or large droplets followed by CLSM and XμCT imaging. Addition of commonly used contrast materials to the coating solution improved visualisation of the coating by XμCT, showing the coat as a discrete section of the overall tablet. Imaging provided qualitative and quantitative evidence revealing that smaller droplets formed thinner, more uniform and less porous film coats. PMID:27548263

Exploring the Legacies of Filmed Patient Narratives: The Interpretation and Appropriation of Patient Films by Health Care Staff.

PubMed

Adams, Mary; Robert, Glenn; Maben, Jill

2015-09-01

We trace the legacies of filmed patient narratives that were edited and screened to encourage engagement with a participatory quality improvement project in an acute hospital setting in England. Using Gabriel's theory of "narrative contract," we examine the initial success of the films in establishing common grounds for participatory project and later, and more varied, interpretations of the films. Over time, the films were interpreted by staff as either useful sources of learning by critical reflection, dubious (invalid or unreliable) representations of patient experience, or as "closed" items available as auditable evidence of completed quality improvement work. We find these interpretations of the films to be shaped by the effect of social distance, the differential outcomes of project work, and changing organizational agendas. We consider the wider conditions of patient narrative as a form of quality improvement knowledge with immediate potency and fragile or fluid legitimacy over time. © The Author(s) 2015.

Accuracy of rapid radiographic film calibration for intensity‐modulated radiation therapy verification

PubMed Central

Kulasekere, Ravi; Moran, Jean M.; Fraass, Benedick A.; Roberson, Peter L.

2006-01-01

A single calibration film method was evaluated for use with intensity‐modulated radiation therapy film quality assurance measurements. The single‐film method has the potential advantages of exposure simplicity, less media consumption, and improved processor quality control. Potential disadvantages include cross contamination of film exposure, implementation effort to document delivered dose, and added complication of film response analysis. Film response differences were measured between standard and single‐film calibration methods. Additional measurements were performed to help trace causes for the observed discrepancies. Kodak X‐OmatV (XV) film was found to have greater response variability than extended dose range (EDR) film. We found it advisable for XV film to relate the film response calibration for the single‐film method to a user‐defined optimal calibration geometry. Using a single calibration film exposed at the time of experiment, the total uncertainty of film response was estimated to be <2% (1%) for XV (EDR) film at 50 (100) cGy and higher, respectively. PACS numbers: 87.53.‐j, 87.53.Dq PMID:17533325

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Science Books & Films, Volume XIV, Number 4.

ERIC Educational Resources Information Center

Finch, Shari, Ed.

This document contains reviews of books for adults, children's books, and films. The materials are rated for accuracy of scientific information, scope or completeness, clarity of writing or narration, quality of illustrations or cinematic quality, and value of book or film when compared to other titles. Each review is accompanied by a coded…

Exploring the Legacies of Filmed Patient Narratives

PubMed Central

Robert, Glenn; Maben, Jill

2015-01-01

We trace the legacies of filmed patient narratives that were edited and screened to encourage engagement with a participatory quality improvement project in an acute hospital setting in England. Using Gabriel’s theory of “narrative contract,” we examine the initial success of the films in establishing common grounds for participatory project and later, and more varied, interpretations of the films. Over time, the films were interpreted by staff as either useful sources of learning by critical reflection, dubious (invalid or unreliable) representations of patient experience, or as “closed” items available as auditable evidence of completed quality improvement work. We find these interpretations of the films to be shaped by the effect of social distance, the differential outcomes of project work, and changing organizational agendas. We consider the wider conditions of patient narrative as a form of quality improvement knowledge with immediate potency and fragile or fluid legitimacy over time. PMID:25576480

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Electro-optical imaging systems integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wight, R.

1987-01-01

Since the advent of high resolution, high data rate electronic sensors for military aircraft, the demands on their counterpart, the image generator hard copy output system, have increased dramatically. This has included support of direct overflight and standoff reconnaissance systems and often has required operation within a military shelter or van. The Tactical Laser Beam Recorder (TLBR) design has met the challenge each time. A third generation (TLBR) was designed and two units delivered to rapidly produce high quality wet process imagery on 5-inch film from a 5-sensor digital image signal input. A modular, in-line wet film processor is includedmore » in the total TLBR (W) system. The system features a rugged optical and transport package that requires virtually no alignment or maintenance. It has a ''Scan FIX'' capability which corrects for scanner fault errors and ''Scan LOC'' system which provides for complete phase synchronism isolation between scanner and digital image data input via strobed, 2-line digital buffers. Electronic gamma adjustment automatically compensates for variable film processing time as the film speed changes to track the sensor. This paper describes the fourth meeting of that challenge, the High Resolution Laser Beam Recorder (HRLBR) for Reconnaissance/Tactical applications.« less

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications

NASA Astrophysics Data System (ADS)

Kingon, Angus I.; Srinivasan, Sudarsan

2005-03-01

Replacement of noble metal electrodes by base metals significantly lowers the cost of ferroelectric, piezoelectric and dielectric devices. Here, we demonstrate that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3, or PZT) thin films directly on base metal copper foils. We explore the impact of the oxygen partial pressure during processing, and demonstrate that high-quality films and interfaces can be achieved through control of the oxygen partial pressure within a narrow window predicted by thermodynamic stability considerations. This demonstration has broad implications, opening up the possibility of the use of low-cost, high-conductivity copper electrodes for a range of Pb-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors and sensors; multilayer PZT piezoelectric stacks; and multilayer dielectric and electrostrictive devices based on lead magnesium niobate-lead titanate. We also point out that the capacitors do not fatigue on repeated switching, unlike those with Pt noble metal electrodes. Instead, they appear to be fatigue-resistant, like capacitors with oxide electrodes. This may have implications for ferroelectric non-volatile memories.

Structural and optical properties of arsenic sulfide films synthesized by a novel PECVD-based approach

NASA Astrophysics Data System (ADS)

Mochalov, Leonid; Kudryashov, Mikhail; Logunov, Aleksandr; Zelentsov, Sergey; Nezhdanov, Aleksey; Mashin, Alexandr; Gogova, Daniela; Chidichimo, Giuseppe; De Filpo, Giovanni

2017-11-01

A new plasma-enhanced chemical vapor deposition-based (PECVD) approach for synthesizing of As-S films, with As content in the range 60-40 at.%, is demonstrated. The process has been carried out in a low-temperature Ar-plasma, employing for the first time volatile As and S as precursors. Utilization of inorganic elemental precursors, in contrast to the typically used in CVD metal-organic compounds or volatile hydrides/halides of Va- and VIa-group-elements, gives the possibility to reach the highest quality and purity of the As-S ≿halcogenide films. Quantum-chemical calculations have been performed to gain insight into the PECVD As-S chalcogenide films structure and the mechanism of its formation in the plasma discharge. An additional vibrational band near 650 cm-1 corresponding to cycled 2-dimensional units is observed by Raman spectroscopy. The process developed is cost-efficient one due to the very precise control and the long-term stability of the plasma parameters and it possesses a high potential for large-area applications such as fabrication of miniature integrated optical elements and 2D/3D printing of optical devices.

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

NASA Astrophysics Data System (ADS)

Suhandi, A.; Tayubi, Y. R.; Arifin, P.

2016-04-01

Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

Impact of Processing Conditions on Inter-tablet Coating Thickness Variations Measured by Terahertz In-Line Sensing

PubMed Central

Lin, Hungyen; May, Robert K; Evans, Michael J; Zhong, Shuncong; Gladden, Lynn F; Shen, Yaochun; Zeitler, J Axel

2015-01-01

A novel in-line technique utilising pulsed terahertz radiation for direct measurement of the film coating thickness of individual tablets during the coating process was previously developed and demonstrated on a production-scale coater. Here, we use this technique to monitor the evolution of tablet film coating thickness and its inter-tablet variability during the coating process under a number of different process conditions that have been purposefully induced in the production-scale coating process. The changes that were introduced to the coating process include removing the baffles from the coater, adding uncoated tablets to the running process, halting the drum, blockage of spray guns and changes to the spray rate. The terahertz sensor was able to pick up the resulting changes in average coating thickness in the coating drum and we report the impact of these process changes on the resulting coating quality. © 2015 The Authors. Journal of Pharmaceutical Sciences published by Wiley Periodicals, Inc. and the American Pharmacists Association J Pharm Sci 104:2513–2522, 2015 PMID:26037660

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

PubMed

Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

2018-04-01

Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multiscale image processing and antiscatter grids in digital radiography.

PubMed

Lo, Winnie Y; Hornof, William J; Zwingenberger, Allison L; Robertson, Ian D

2009-01-01

Scatter radiation is a source of noise and results in decreased signal-to-noise ratio and thus decreased image quality in digital radiography. We determined subjectively whether a digitally processed image made without a grid would be of similar quality to an image made with a grid but without image processing. Additionally the effects of exposure dose and of a using a grid with digital radiography on overall image quality were studied. Thoracic and abdominal radiographs of five dogs of various sizes were made. Four acquisition techniques were included (1) with a grid, standard exposure dose, digital image processing; (2) without a grid, standard exposure dose, digital image processing; (3) without a grid, half the exposure dose, digital image processing; and (4) with a grid, standard exposure dose, no digital image processing (to mimic a film-screen radiograph). Full-size radiographs as well as magnified images of specific anatomic regions were generated. Nine reviewers rated the overall image quality subjectively using a five-point scale. All digitally processed radiographs had higher overall scores than nondigitally processed radiographs regardless of patient size, exposure dose, or use of a grid. The images made at half the exposure dose had a slightly lower quality than those made at full dose, but this was only statistically significant in magnified images. Using a grid with digital image processing led to a slight but statistically significant increase in overall quality when compared with digitally processed images made without a grid but whether this increase in quality is clinically significant is unknown.

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Characterization of PET preforms using spectral domain optical coherence tomography

NASA Astrophysics Data System (ADS)

Hosseiny, Hamid; Ferreira, Manuel João.; Martins, Teresa; Carmelo Rosa, Carla

2013-11-01

Polyethylene terephthalate (PET) preforms are massively produced nowadays with the purpose of producing food and beverages packaging and liquid containers. Some varieties of these preforms are produced as multilayer structures, where very thin inner film(s) act as a barrier for nutrients leakage. The knowledge of the thickness of this thin inner layer is important in the production line. The quality control of preforms production requires a fast approach and normally the thickness control is performed by destructive means out of the production line. A spectral domain optical coherence tomography (SD-OCT) method was proposed to examine the thin layers in real time. This paper describes a nondestructive approach and all required signal processing steps to characterize the thin inner layers and also to improve the imaging speed and the signal to noise ratio. The algorithm was developed by using graphics processing unit (GPU) with computer unified device architecture (CUDA). This GPU-accelerated white light interferometry technique nondestructively assesses the samples and has high imaging speed advantage, overcoming the bottlenecks in PET performs quality control.

Enhancement of photovoltaic performance of flexible perovskite solar cells by means of ionic liquid interface modification in a low temperature all solution process

NASA Astrophysics Data System (ADS)

Chu, Weijing; Yang, Junyou; Jiang, Qinghui; Li, Xin; Xin, Jiwu

2018-05-01

The quality of interface between the electron transport layer (ETL) and perovskite is very crucial to the photovoltaic performance of a flexible perovskite solar cell fabricated under low-temperature process. This work demonstrates a room temperature ionic liquid modification strategy to the interface between ZnO layer and MAPbI3 film for high performance flexible perovskite solar cells based on a PET substrate. [BMIM]BF4 ionic liquid modification can significantly improve the surface quality and wettability of the ZnO ETL, thus greatly increase the charge mobility of ZnO ETL and improve the crystalline of perovskite film based on it. Moreover, the dipolar polarization layer among the ZnO ETL with perovskite, built by modification, can adjust the energy level between the ZnO ETL and perovskite and facilitates the charge extraction. Therefore, an overall power conversion efficiency (PCE) of 12.1% have been achieved under standard illumination, it increases by 1.4 times of the flexible perovskite solar cells on a pristine ZnO ETL.

Analysis of the sources of uncertainty for EDR2 film‐based IMRT quality assurance

PubMed Central

Shi, Chengyu; Papanikolaou, Nikos; Yan, Yulong; Weng, Xuejun; Jiang, gyu

2006-01-01

In our institution, patient‐specific quality assurance (QA) for intensity‐modulated radiation therapy (IMRT) is usually performed by measuring the dose to a point using an ion chamber and by measuring the dose to a plane using film. In order to perform absolute dose comparison measurements using film, an accurate calibration curve should be used. In this paper, we investigate the film response curve uncertainty factors, including film batch differences, film processor temperature effect, film digitization, and treatment unit. In addition, we reviewed 50 patient‐specific IMRT QA procedures performed in our institution in order to quantify the sources of error in film‐based dosimetry. Our study showed that the EDR2 film dosimetry can be done with less than 3% uncertainty. The EDR2 film response was not affected by the choice of treatment unit provided the nominal energy was the same. This investigation of the different sources of uncertainties in the film calibration procedure can provide a better understanding of the film‐based dosimetry and can improve quality control for IMRT QA. PACS numbers: 87.86.Cd, 87.53.Xd, 87.57.Nk PMID:17533329

Nanoscale Solid State Batteries Enabled by Thermal Atomic Layer Deposition of a Lithium Polyphosphazene Solid State Electrolyte

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pearse, Alexander J.; Schmitt, Thomas E.; Fuller, Elliot J.

Several active areas of research in novel energy storage technologies, including three-dimensional solid state batteries and passivation coatings for reactive battery electrode components, require conformal solid state electrolytes. We describe an atomic layer deposition (ALD) process for a member of the lithium phosphorus oxynitride (LiPON) family, which is employed as a thin film lithium-conducting solid electrolyte. The reaction between lithium tert-butoxide (LiO tBu) and diethyl phosphoramidate (DEPA) produces conformal, ionically conductive thin films with a stoichiometry close to Li 2PO 2N between 250 and 300°C. The P/N ratio of the films is always 1, indicative of a particular polymorph ofmore » LiPON which closely resembles a polyphosphazene. Films grown at 300°C have an ionic conductivity of (6.51 ± 0.36)×10 -7 S/cm at 35°C, and are functionally electrochemically stable in the window from 0 to 5.3V vs. Li/Li +. We demonstrate the viability of the ALD-grown electrolyte by integrating it into full solid state batteries, including thin film devices using LiCoO 2 as the cathode and Si as the anode operating at up to 1 mA/cm 2. The high quality of the ALD growth process allows pinhole-free deposition even on rough crystalline surfaces, and we demonstrate the fabrication and operation of thin film batteries with the thinnest (<40nm) solid state electrolytes yet reported. Finally, we show an additional application of the moderate-temperature ALD process by demonstrating a flexible solid state battery fabricated on a polymer substrate.« less

Nanoscale Solid State Batteries Enabled by Thermal Atomic Layer Deposition of a Lithium Polyphosphazene Solid State Electrolyte

DOE PAGES

Pearse, Alexander J.; Schmitt, Thomas E.; Fuller, Elliot J.; ...

2017-04-10

Several active areas of research in novel energy storage technologies, including three-dimensional solid state batteries and passivation coatings for reactive battery electrode components, require conformal solid state electrolytes. We describe an atomic layer deposition (ALD) process for a member of the lithium phosphorus oxynitride (LiPON) family, which is employed as a thin film lithium-conducting solid electrolyte. The reaction between lithium tert-butoxide (LiO tBu) and diethyl phosphoramidate (DEPA) produces conformal, ionically conductive thin films with a stoichiometry close to Li 2PO 2N between 250 and 300°C. The P/N ratio of the films is always 1, indicative of a particular polymorph ofmore » LiPON which closely resembles a polyphosphazene. Films grown at 300°C have an ionic conductivity of (6.51 ± 0.36)×10 -7 S/cm at 35°C, and are functionally electrochemically stable in the window from 0 to 5.3V vs. Li/Li +. We demonstrate the viability of the ALD-grown electrolyte by integrating it into full solid state batteries, including thin film devices using LiCoO 2 as the cathode and Si as the anode operating at up to 1 mA/cm 2. The high quality of the ALD growth process allows pinhole-free deposition even on rough crystalline surfaces, and we demonstrate the fabrication and operation of thin film batteries with the thinnest (<40nm) solid state electrolytes yet reported. Finally, we show an additional application of the moderate-temperature ALD process by demonstrating a flexible solid state battery fabricated on a polymer substrate.« less

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

PubMed Central

Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

2016-01-01

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

An investigation of transition boiling mechanisms of subcooled water under forced convective conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwang-Won, Lee; Sang-Yong, Lee

1995-09-01

A mechanistic model for forced convective transition boiling has been developed to investigate transition boiling mechanisms and to predict transition boiling heat flux realistically. This model is based on a postulated multi-stage boiling process occurring during the passage time of the elongated vapor blanket specified at a critical heat flux (CHF) condition. Between the departure from nucleate boiling (DNB) and the departure from film boiling (DFB) points, the boiling heat transfer is established through three boiling stages, namely, the macrolayer evaporation and dryout governed by nucleate boiling in a thin liquid film and the unstable film boiling characterized by themore » frequent touches of the interface and the heated wall. The total heat transfer rates after the DNB is weighted by the time fractions of each stage, which are defined as the ratio of each stage duration to the vapor blanket passage time. The model predictions are compared with some available experimental transition boiling data. The parametric effects of pressure, mass flux, inlet subcooling on the transition boiling heat transfer are also investigated. From these comparisons, it can be seen that this model can identify the crucial mechanisms of forced convective transition boiling, and that the transition boiling heat fluxes including the maximum heat flux and the minimum film boiling heat flux are well predicted at low qualities/high pressures near 10 bar. In future, this model will be improved in the unstable film boiling stage and generalized for high quality and low pressure situations.« less

Making and Breaking of Lead Halide Perovskites.

PubMed

Manser, Joseph S; Saidaminov, Makhsud I; Christians, Jeffrey A; Bakr, Osman M; Kamat, Prashant V

2016-02-16

A new front-runner has emerged in the field of next-generation photovoltaics. A unique class of materials, known as organic metal halide perovskites, bridges the gap between low-cost fabrication and exceptional device performance. These compounds can be processed at low temperature (typically in the range 80-150 °C) and readily self-assemble from the solution phase into high-quality semiconductor thin films. The low energetic barrier for crystal formation has mixed consequences. On one hand, it enables inexpensive processing and both optical and electronic tunability. The caveat, however, is that many as-formed lead halide perovskite thin films lack chemical and structural stability, undergoing rapid degradation in the presence of moisture or heat. To date, improvements in perovskite solar cell efficiency have resulted primarily from better control over thin film morphology, manipulation of the stoichiometry and chemistry of lead halide and alkylammonium halide precursors, and the choice of solvent treatment. Proper characterization and tuning of processing parameters can aid in rational optimization of perovskite devices. Likewise, gaining a comprehensive understanding of the degradation mechanism and identifying components of the perovskite structure that may be particularly susceptible to attack by moisture are vital to mitigate device degradation under operating conditions. This Account provides insight into the lifecycle of organic-inorganic lead halide perovskites, including (i) the nature of the precursor solution, (ii) formation of solid-state perovskite thin films and single crystals, and (iii) transformation of perovskites into hydrated phases upon exposure to moisture. In particular, spectroscopic and structural characterization techniques shed light on the thermally driven evolution of the perovskite structure. By tuning precursor stoichiometry and chemistry, and thus the lead halide charge-transfer complexes present in solution, crystallization kinetics can be tailored to yield improved thin film homogeneity. Because degradation of the as-formed perovskite film is in many ways analogous to its initial formation, the same suite of monitoring techniques reveals the moisture-induced transformation of low band gap methylammonium lead iodide (CH3NH3PbI3) to wide band gap hydrate compounds. The rate of degradation is increased upon exposure to light. Interestingly, the hydration process is reversible under certain conditions. This facile formation and subsequent chemical lability raises the question of whether CH3NH3PbI3 and its analogues are thermodynamically stable phases, thus posing a significant challenge to the development of transformative perovskite photovoltaics. Adequately addressing issues of structural and chemical stability under real-world operating conditions is paramount if perovskite solar cells are to make an impact beyond the benchtop. Expanding our fundamental knowledge of lead halide perovskite formation and degradation pathways can facilitate fabrication of stable, high-quality perovskite thin films for the next generation of photovoltaic and light emitting devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manser, Joseph S.; Saidaminov, Makhsud I.; Christians, Jeffrey A.

A new front-runner has emerged in the field of next-generation photovoltaics. A unique class of materials, known as organic metal halide perovskites, bridges the gap between low-cost fabrication and exceptional device performance. These compounds can be processed at low temperature (typically in the range 80-150 °C) and readily self-assemble from the solution phase into high-quality semiconductor thin films. The low energetic barrier for crystal formation has mixed consequences. On one hand, it enables inexpensive processing and both optical and electronic tunability. The caveat, however, is that many as-formed lead halide perovskite thin films lack chemical and structural stability, undergoing rapidmore » degradation in the presence of moisture or heat. To date, improvements in perovskite solar cell efficiency have resulted primarily from better control over thin film morphology, manipulation of the stoichiometry and chemistry of lead halide and alkylammonium halide precursors, and the choice of solvent treatment. Proper characterization and tuning of processing parameters can aid in rational optimization of perovskite devices. Likewise, gaining a comprehensive understanding of the degradation mechanism and identifying components of the perovskite structure that may be particularly susceptible to attack by moisture are vital to mitigate device degradation under operating conditions. This Account provides insight into the lifecycle of organic-inorganic lead halide perovskites, including (i) the nature of the precursor solution, (ii) formation of solid-state perovskite thin films and single crystals, and (iii) transformation of perovskites into hydrated phases upon exposure to moisture. In particular, spectroscopic and structural characterization techniques shed light on the thermally driven evolution of the perovskite structure. By tuning precursor stoichiometry and chemistry, and thus the lead halide charge-transfer complexes present in solution, crystallization kinetics can be tailored to yield improved thin film homogeneity. Because degradation of the as-formed perovskite film is in many ways analogous to its initial formation, the same suite of monitoring techniques reveals the moisture-induced transformation of low band gap methylammonium lead iodide (CH 3NH 3PbI 3) to wide band gap hydrate compounds. The rate of degradation is increased upon exposure to light. Interestingly, the hydration process is reversible under certain conditions. This facile formation and subsequent chemical lability raises the question of whether CH 3NH 3PbI 3 and its analogues are thermodynamically stable phases, thus posing a significant challenge to the development of transformative perovskite photovoltaics. Adequately addressing issues of structural and chemical stability under real-world operating conditions is paramount if perovskite solar cells are to make an impact beyond the benchtop. Expanding our fundamental knowledge of lead halide perovskite formation and degradation pathways can facilitate fabrication of stable, high-quality perovskite thin films for the next generation of photovoltaic and light emitting devices.« less

Making and Breaking of Lead Halide Perovskites

DOE PAGES

Manser, Joseph S.; Saidaminov, Makhsud I.; Christians, Jeffrey A.; ...

2016-01-20

A new front-runner has emerged in the field of next-generation photovoltaics. A unique class of materials, known as organic metal halide perovskites, bridges the gap between low-cost fabrication and exceptional device performance. These compounds can be processed at low temperature (typically in the range 80-150 °C) and readily self-assemble from the solution phase into high-quality semiconductor thin films. The low energetic barrier for crystal formation has mixed consequences. On one hand, it enables inexpensive processing and both optical and electronic tunability. The caveat, however, is that many as-formed lead halide perovskite thin films lack chemical and structural stability, undergoing rapidmore » degradation in the presence of moisture or heat. To date, improvements in perovskite solar cell efficiency have resulted primarily from better control over thin film morphology, manipulation of the stoichiometry and chemistry of lead halide and alkylammonium halide precursors, and the choice of solvent treatment. Proper characterization and tuning of processing parameters can aid in rational optimization of perovskite devices. Likewise, gaining a comprehensive understanding of the degradation mechanism and identifying components of the perovskite structure that may be particularly susceptible to attack by moisture are vital to mitigate device degradation under operating conditions. This Account provides insight into the lifecycle of organic-inorganic lead halide perovskites, including (i) the nature of the precursor solution, (ii) formation of solid-state perovskite thin films and single crystals, and (iii) transformation of perovskites into hydrated phases upon exposure to moisture. In particular, spectroscopic and structural characterization techniques shed light on the thermally driven evolution of the perovskite structure. By tuning precursor stoichiometry and chemistry, and thus the lead halide charge-transfer complexes present in solution, crystallization kinetics can be tailored to yield improved thin film homogeneity. Because degradation of the as-formed perovskite film is in many ways analogous to its initial formation, the same suite of monitoring techniques reveals the moisture-induced transformation of low band gap methylammonium lead iodide (CH 3NH 3PbI 3) to wide band gap hydrate compounds. The rate of degradation is increased upon exposure to light. Interestingly, the hydration process is reversible under certain conditions. This facile formation and subsequent chemical lability raises the question of whether CH 3NH 3PbI 3 and its analogues are thermodynamically stable phases, thus posing a significant challenge to the development of transformative perovskite photovoltaics. Adequately addressing issues of structural and chemical stability under real-world operating conditions is paramount if perovskite solar cells are to make an impact beyond the benchtop. Expanding our fundamental knowledge of lead halide perovskite formation and degradation pathways can facilitate fabrication of stable, high-quality perovskite thin films for the next generation of photovoltaic and light emitting devices.« less

The effects of developer age on diagnostic accuracy: a study using assessment of endodontic file length.

PubMed

Syriopoulos, K; Sanderink, G C; Velders, X L; van Ginkel, F C; van der Stelt, P F

1999-09-01

To examine the effects of developer age on image quality. Endodontic files, size 10 and 15, were placed in upper and lower molars and premolars up to the root apex or 1.5 mm short. A series of radiographs were made with each of three film types: Dentus M2 (Agfa-Gevaert, Mortsel, Belgium), Ektaspeed Plus and Ultra-speed (Kodak Eastman Co, Rochester, USA). The films were processed bi-weekly using the same Agfa chemicals (Heraeus Kulzer, Dormagen, Germany) over a 6-week period. An additional set of Dentus M2 films was processed using Periomat chemicals (Dürr Dental, Bietigheim-Bissingen, Germany). The films were viewed by eight dentists who rated the position of the tip of the file using a 5-point confidence scale. ROC data were analysed by means of analysis of variance. Az value was the dependent variable, whereas observer age group was entered as between subject factor. The null hypothesis was rejected when P<0.05. The diagnostic accuracies of the three films were comparable during the first 4 weeks. In the sixth week Ultra-speed was significantly better than the other two films (P=0.046). The Periomat chemicals showed significantly greater consistency than the Agfa chemicals (P=0.004). Developer exhaustion significantly affected the performance of the older observers (P=0.008), especially when Agfa chemicals and file size 10 were used. Agfa chemicals older than 4 weeks significantly affect the assessment of endodontic file length. In earlier stages there are no significant differences between the three films tested. Dentus M2 and Ektaspeed Plus films should be used as they require lower exposures.