Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

75 FR 55604 - In the Matter of Certain Flash Memory Chips and Products Containing the Same; Notice of...

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2010-09-13

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-735] In the Matter of Certain Flash Memory Chips... the sale within the United States after importation of certain flash memory chips and products... importation of certain flash memory chips and products containing the same that infringe one or more of claims...

76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

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2011-09-07

... Access Memory and Nand Flash Memory Devices and Products Containing Same; Notice of Institution of... importation, and the sale within the United States after importation of certain dynamic random access memory and NAND flash memory devices and products containing same by reason of infringement of certain claims...

Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs

NASA Astrophysics Data System (ADS)

Tokutomi, Tsukasa; Tanakamaru, Shuhei; Iwasaki, Tomoko Ogura; Takeuchi, Ken

2015-09-01

To improve the reliability of NAND Flash memory based solid-state drives (SSDs), error-prediction LDPC (EP-LDPC) has been proposed for multi-level-cell (MLC) NAND Flash memory (Tanakamaru et al., 2012, 2013), which is effective for long retention times. However, EP-LDPC is not as effective for triple-level cell (TLC) NAND Flash memory, because TLC NAND Flash has higher error rates and is more sensitive to program-disturb error. Therefore, advanced error-prediction LDPC (AEP-LDPC) has been proposed for TLC NAND Flash memory (Tokutomi et al., 2014). AEP-LDPC can correct errors more accurately by precisely describing the error phenomena. In this paper, the effects of AEP-LDPC are investigated in a 2×nm TLC NAND Flash memory with temperature characterization. Compared with LDPC-with-BER-only, the SSD's data-retention time is increased by 3.4× and 9.5× at room-temperature (RT) and 85 °C, respectively. Similarly, the acceptable BER is increased by 1.8× and 2.3×, respectively. Moreover, AEP-LDPC can correct errors with pre-determined tables made at higher temperatures to shorten the measurement time before shipping. Furthermore, it is found that one table can cover behavior over a range of temperatures in AEP-LDPC. As a result, the total table size can be reduced to 777 kBytes, which makes this approach more practical.

The Forensic Potential of Flash Memory

DTIC Science & Technology

2009-09-01

limit range of 10 to 100 years before data is lost [12]. 5. Flash Memory Logical Structure The logical structure of flash memory from least to...area is not standardized and is manufacturer specific. This information will be used by the wear leveling algorithms and as such will be proprietary...memory cells, the manufacturers of the flash implement a wear leveling algorithm . In contrast, a magnetic disk in an overwrite operation will reuse the

A fast and low-power microelectromechanical system-based non-volatile memory device

PubMed Central

Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

2011-01-01

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

Non Volatile Flash Memory Radiation Tests

NASA Technical Reports Server (NTRS)

Irom, Farokh; Nguyen, Duc N.; Allen, Greg

2012-01-01

Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2010

NASA Technical Reports Server (NTRS)

Irom, Farokh; Nguyen, Duc N.

2010-01-01

High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories manufactured by Micron Technology.

76 FR 41824 - In the Matter of Certain Flash Memory Chips And Products Containing Same; Notice of Commission...

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2011-07-15

... Memory Chips And Products Containing Same; Notice of Commission Determination Not To Review an Initial... unopposed motion to terminate in its entirety Inv. No. 337-TA-735, Certain Flash Memory Chips and Products... flash memory chips and products containing same by reason of infringement of certain claims of U.S...

From Secure Memories to Smart Card Security

NASA Astrophysics Data System (ADS)

Handschuh, Helena; Trichina, Elena

Non-volatile memory is essential in most embedded security applications. It will store the key and other sensitive materials for cryptographic and security applications. In this chapter, first an overview is given of current flash memory architectures. Next the standard security features which form the basis of so-called secure memories are described in more detail. Smart cards are a typical embedded application that is very vulnerable to attacks and that at the same time has a high need for secure non-volatile memory. In the next part of this chapter, the secure memories of so-called flash-based high-density smart cards are described. It is followed by a detailed analysis of what the new security challenges for such objects are.

Radiation Tests of Highly scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories--Update 2011

NASA Technical Reports Server (NTRS)

Irom, Farokh; Nguyen, Duc N.

2011-01-01

High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) 32Gb and multi-level cell (MLC) 64Gb NAND flash memories manufactured by Micron Technology.

76 FR 4375 - In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of...

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2011-01-25

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-683] In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... the United States after importation of certain MLC flash memory devices and products containing same...

78 FR 49287 - Certain Flash Memory Chips and Products Containing the Same Correction to Notice of Receipt of...

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2013-08-13

... INTERNATIONAL TRADE COMMISSION [Docket No 2971] Certain Flash Memory Chips and Products Containing the Same Correction to Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public..., Certain Flash Memory Chips and Products Containing the Same, DN 2971; the Commission solicited comments on...

Novel conformal organic antireflective coatings for advanced I-line lithography

NASA Astrophysics Data System (ADS)

Deshpande, Shreeram V.; Nowak, Kelly A.; Fowler, Shelly; Williams, Paul; Arjona, Mikko

2001-08-01

Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages in semiconductor devices. First, it offers flexibility of in-circuit programming capability to reduce the loss from programming errors and to significantly reduce commercialization time to market for new devices. Second, flash memory has a double density memory capability through stacked gate structures which increases the memory capability and thus saves significantly on chip real estate. However, due to stacked gate structures the requirements for manufacturing of flash memory devices are significantly different from traditional memory devices. Stacked gate structures also offer unique challenges to lithographic patterning materials such as Bottom Anti-Reflective Coating (BARC) compositions used to achieve CD control and to minimize standing wave effect in photolithography. To be applicable in flash memory manufacturing a BARC should form a conformal coating on high topography of stacked gate features as well as provide the normal anti-reflection properties for CD control. In this paper we report on a new highly conformal advanced i-line BARC for use in design and manufacture of flash memory devices. Conformal BARCs being significantly thinner in trenches than the planarizing BARCs offer the advantage of reducing BARC overetch and thus minimizing resist thickness loss.

Dynamic Forest: An Efficient Index Structure for NAND Flash Memory

NASA Astrophysics Data System (ADS)

Yang, Chul-Woong; Yong Lee, Ki; Ho Kim, Myoung; Lee, Yoon-Joon

In this paper, we present an efficient index structure for NAND flash memory, called the Dynamic Forest (D-Forest). Since write operations incur high overhead on NAND flash memory, D-Forest is designed to minimize write operations for index updates. The experimental results show that D-Forest significantly reduces write operations compared to the conventional B+-tree.

76 FR 40931 - In the Matter of Certain Flash Memory and Products Containing Same; Notice of Commission...

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2011-07-12

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-685] In the Matter of Certain Flash Memory and... for importation, and the sale within the United States after importation of certain flash memory and... other agreements, written or oral, express or implied, between the parties concerning the subject matter...

75 FR 82071 - In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

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2010-12-29

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission Decision Not To Review the ALJ'S Final... States after importation of certain flash memory chips and products containing the same by reason of...

75 FR 82071 - In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-29

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission Decision Not To Review the ALJ's Final... flash memory chips and products containing the same by reason of infringement of various claims of...

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

Don’t make cache too complex: A simple probability-based cache management scheme for SSDs

PubMed Central

Cho, Sangyeun; Choi, Jongmoo

2017-01-01

Solid-state drives (SSDs) have recently become a common storage component in computer systems, and they are fueled by continued bit cost reductions achieved with smaller feature sizes and multiple-level cell technologies. However, as the flash memory stores more bits per cell, the performance and reliability of the flash memory degrade substantially. To solve this problem, a fast non-volatile memory (NVM-)based cache has been employed within SSDs to reduce the long latency required to write data. Absorbing small writes in a fast NVM cache can also reduce the number of flash memory erase operations. To maximize the benefits of an NVM cache, it is important to increase the NVM cache utilization. In this paper, we propose and study ProCache, a simple NVM cache management scheme, that makes cache-entrance decisions based on random probability testing. Our scheme is motivated by the observation that frequently written hot data will eventually enter the cache with a high probability, and that infrequently accessed cold data will not enter the cache easily. Owing to its simplicity, ProCache is easy to implement at a substantially smaller cost than similar previously studied techniques. We evaluate ProCache and conclude that it achieves comparable performance compared to a more complex reference counter-based cache-management scheme. PMID:28358897

Don't make cache too complex: A simple probability-based cache management scheme for SSDs.

PubMed

Baek, Seungjae; Cho, Sangyeun; Choi, Jongmoo

2017-01-01

Solid-state drives (SSDs) have recently become a common storage component in computer systems, and they are fueled by continued bit cost reductions achieved with smaller feature sizes and multiple-level cell technologies. However, as the flash memory stores more bits per cell, the performance and reliability of the flash memory degrade substantially. To solve this problem, a fast non-volatile memory (NVM-)based cache has been employed within SSDs to reduce the long latency required to write data. Absorbing small writes in a fast NVM cache can also reduce the number of flash memory erase operations. To maximize the benefits of an NVM cache, it is important to increase the NVM cache utilization. In this paper, we propose and study ProCache, a simple NVM cache management scheme, that makes cache-entrance decisions based on random probability testing. Our scheme is motivated by the observation that frequently written hot data will eventually enter the cache with a high probability, and that infrequently accessed cold data will not enter the cache easily. Owing to its simplicity, ProCache is easy to implement at a substantially smaller cost than similar previously studied techniques. We evaluate ProCache and conclude that it achieves comparable performance compared to a more complex reference counter-based cache-management scheme.

Some Improvements in Utilization of Flash Memory Devices

NASA Technical Reports Server (NTRS)

Gender, Thomas K.; Chow, James; Ott, William E.

2009-01-01

Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically limited to about 1,000,000 erases, (4) as many as 2 percent of the blocks of a given device may fail before the expected end of its life, and (5) to ensure reliability of reading and writing, power must not be interrupted during minimum specified reading and writing times. The first development comprises interrelated software components that regulate reading, writing, and erasure operations to minimize migration of data and unevenness in wear; perform erasures during idle times; quickly make erased blocks available for writing; detect and report failed blocks; maintain the overall state of a flash memory to satisfy real-time performance requirements; and detect and initialize a new flash memory device. The second development is a combination of hardware and software that senses the failure of a main power supply and draws power from a capacitive storage circuit designed to hold enough energy to sustain operation until reading or writing is completed.

Models for Total-Dose Radiation Effects in Non-Volatile Memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip Montgomery; Wix, Steven D.

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models andmore » compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.« less

Performance analysis of three-dimensional-triple-level cell and two-dimensional-multi-level cell NAND flash hybrid solid-state drives

NASA Astrophysics Data System (ADS)

Sakaki, Yukiya; Yamada, Tomoaki; Matsui, Chihiro; Yamaga, Yusuke; Takeuchi, Ken

2018-04-01

In order to improve performance of solid-state drives (SSDs), hybrid SSDs have been proposed. Hybrid SSDs consist of more than two types of NAND flash memories or NAND flash memories and storage-class memories (SCMs). However, the cost of hybrid SSDs adopting SCMs is more expensive than that of NAND flash only SSDs because of the high bit cost of SCMs. This paper proposes unique hybrid SSDs with two-dimensional (2D) horizontal multi-level cell (MLC)/three-dimensional (3D) vertical triple-level cell (TLC) NAND flash memories to achieve higher cost-performance. The 2D-MLC/3D-TLC hybrid SSD achieves up to 31% higher performance than the conventional 2D-MLC/2D-TLC hybrid SSD. The factors of different performance between the proposed hybrid SSD and the conventional hybrid SSD are analyzed by changing its block size, read/write/erase latencies, and write unit of 3D-TLC NAND flash memory, by means of a transaction-level modeling simulator.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Method for programming a flash memory

DOEpatents

Brosky, Alexander R.; Locke, William N.; Maher, Conrado M.

2016-08-23

A method of programming a flash memory is described. The method includes partitioning a flash memory into a first group having a first level of write-protection, a second group having a second level of write-protection, and a third group having a third level of write-protection. The write-protection of the second and third groups is disabled using an installation adapter. The third group is programmed using a Software Installation Device.

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Chen, D.; Friendlich, M.; Carts, M. A.; Seidleck, C. M.; LaBel, K. A.

2011-01-01

We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. Under some circumstanc es, radiation exposure has a significant effect on the retention of f lash memories.

Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface

DTIC Science & Technology

2016-03-17

Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface Austin H. Roach, Matthew J. Gadlage, James D. Ingalls, Aaron...reliability and trust of memories is very important, but because of incomplete documentation provided by commercial vendors and a lack of low-level...shown here that useful information about the trust and reliability of COTS NAND Flash components can be obtained by going beyond the standard product

A hybrid ferroelectric-flash memory cells

NASA Astrophysics Data System (ADS)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Hung, Chinglin; Takeuchi, Ken

2012-04-01

The scaling trends and limitation in sub-20 nm a bulk and silicon-on-insulator (SOI) NAND flash memory is studied by the three-dimensional (3D) device simulation focusing on short channel effects (SCE), channel boost leakage and channel voltage boosting characteristics during the program-inhibit operation. Although increasing punch-through stopper doping concentration is effective for suppressing SCE in bulk NAND cells, the generation of junction leakage becomes serious. On the other hand, SCE can be suppressed by thinning the buried oxide (BOX) in SOI NAND cells. However, the boosted channel voltage decreases by the higher BOX capacitance. It is concluded that the scaling limitation is dominated by the junction leakage and channel boosting capability for bulk and SOI NAND flash cells, respectively, and the scaling limit is decreased to 9 nm using SOI NAND flash memory cells from 13 nm in bulk NAND flash memory cells.

Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage

NASA Astrophysics Data System (ADS)

Matsui, Chihiro; Kinoshita, Reika; Takeuchi, Ken

2018-04-01

A hybrid of storage class memory (SCM) and NAND flash is a promising technology for high performance storage. Error correction is inevitable on SCM and NAND flash because their bit error rate (BER) increases with write/erase (W/E) cycles, data retention, and program/read disturb. In addition, scaling and multi-level cell technologies increase BER. However, error-correcting code (ECC) degrades storage performance because of extra memory reading and encoding/decoding time. Therefore, applicable ECC strength of SCM and NAND flash is evaluated independently by fixing ECC strength of one memory in the hybrid storage. As a result, weak BCH ECC with small correctable bit is recommended for the hybrid storage with large SCM capacity because SCM is accessed frequently. In contrast, strong and long-latency LDPC ECC can be applied to NAND flash in the hybrid storage with large SCM capacity because large-capacity SCM improves the storage performance.

Fault-tolerant NAND-flash memory module for next-generation scientific instruments

NASA Astrophysics Data System (ADS)

Lange, Tobias; Michel, Holger; Fiethe, Björn; Michalik, Harald; Walter, Dietmar

2015-10-01

Remote sensing instruments on today's space missions deliver a high amount of data which is typically evaluated on ground. Especially for deep space missions the telemetry downlink is very limited which creates the need for the scientific evaluation and thereby a reduction of data volume already on-board the spacecraft. A demanding example is the Polarimetric and Helioseismic Imager (PHI) instrument on Solar Orbiter. To enable on-board offline processing for data reduction, the instrument has to be equipped with a high capacity memory module. The module is based on non-volatile NAND-Flash technology, which requires more advanced operation than volatile DRAM. Unlike classical mass memories, the module is integrated into the instrument and allows readback of data for processing. The architecture and safe operation of such kind of memory module is described in the following paper.

Microdose Induced Data Loss on Floating Gate Memories

NASA Technical Reports Server (NTRS)

Guertin, Steven M.; Nguyen, Duc M.; Patterson, Jeffrey D.

2006-01-01

Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

Space Radiation Effects in Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Johnston, A. H.

2001-01-01

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

FPGA Flash Memory High Speed Data Acquisition

NASA Technical Reports Server (NTRS)

Gonzalez, April

2013-01-01

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

NASA Technical Reports Server (NTRS)

Irom, Farokh; Allen, Gregory R.

2012-01-01

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

NASA Astrophysics Data System (ADS)

Andreani, C.; Senesi, R.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Cazzaniga, C.; Frost, C. D.; Picozza, P.; Gorini, G.; Mancini, R.; Sarno, M.

2018-02-01

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories.

Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2010-01-01

This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

NASA Technical Reports Server (NTRS)

Li, Yue (Inventor); Bruck, Jehoshua (Inventor)

2018-01-01

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Berg, Melanie; Friendlich, Mark; Wilcox, Ted; Seidleck, Christina; LaBel, Kenneth A.; Irom, Farokh; Buchner, Steven P.; McMorrow, Dale; Mavis, David G.;

Low-temperature post-deposition annealing investigation for 3D charge trap flash memory by Kelvin probe force microscopy

NASA Astrophysics Data System (ADS)

Huo, Zongliang; Jin, Lei; Han, Yulong; Li, Xinkai; Ye, Tianchun; Liu, Ming

2015-01-01

The influence of post-deposition annealing (PDA) temperature condition on charge distribution behavior of HfO2 thin films was systematically investigated by various-temperature Kelvin probe force microscopy technology. Contact potential difference profiles demonstrated that charge storage capability shrinks with decreasing annealing temperature from 1,000 to 500 °C and lower. Compared to 1,000 °C PDA, it was found that 500 °C PDA causes deeper effective trap energy level, suppresses lateral charge spreading, and improves the retention characteristics. It is concluded that low-temperature PDA can be adopted in 3D HfO2-based charge trap flash memory to improve the thermal treatment compatibility of the bottom peripheral logic and upper memory arrays.

Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigation

NASA Technical Reports Server (NTRS)

Swift, G.

2002-01-01

JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.

Optimal proximity correction: application for flash memory design

NASA Astrophysics Data System (ADS)

Chen, Y. O.; Huang, D. L.; Sung, K. T.; Chiang, J. J.; Yu, M.; Teng, F.; Chu, Lung; Rey, Juan C.; Bernard, Douglas A.; Li, Jiangwei; Li, Junling; Moroz, V.; Boksha, Victor V.

1998-06-01

Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure. In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by three- dimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding. As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.

Multi-Level Bitmap Indexes for Flash Memory Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kesheng; Madduri, Kamesh; Canon, Shane

2010-07-23

Due to their low access latency, high read speed, and power-efficient operation, flash memory storage devices are rapidly emerging as an attractive alternative to traditional magnetic storage devices. However, tests show that the most efficient indexing methods are not able to take advantage of the flash memory storage devices. In this paper, we present a set of multi-level bitmap indexes that can effectively take advantage of flash storage devices. These indexing methods use coarsely binned indexes to answer queries approximately, and then use finely binned indexes to refine the answers. Our new methods read significantly lower volumes of data atmore » the expense of an increased disk access count, thus taking full advantage of the improved read speed and low access latency of flash devices. To demonstrate the advantage of these new indexes, we measure their performance on a number of storage systems using a standard data warehousing benchmark called the Set Query Benchmark. We observe that multi-level strategies on flash drives are up to 3 times faster than traditional indexing strategies on magnetic disk drives.« less

75 FR 11909 - In the Matter of: Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-12

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of: Certain Flash Memory Chips and Products Containing Same; Notice of Commission Determination Not To Review an Initial..., and the [[Page 11910

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

NASA Technical Reports Server (NTRS)

Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

A light writable microfluidic "flash memory": optically addressed actuator array with latched operation for microfluidic applications.

PubMed

Hua, Zhishan; Pal, Rohit; Srivannavit, Onnop; Burns, Mark A; Gulari, Erdogan

2008-03-01

This paper presents a novel optically addressed microactuator array (microfluidic "flash memory") with latched operation. Analogous to the address-data bus mediated memory address protocol in electronics, the microactuator array consists of individual phase-change based actuators addressed by localized heating through focused light patterns (address bus), which can be provided by a modified projector or high power laser pointer. A common pressure manifold (data bus) for the entire array is used to generate large deflections of the phase change actuators in the molten phase. The use of phase change material as the working media enables latched operation of the actuator array. After the initial light "writing" during which the phase is temporarily changed to molten, the actuated status is self-maintained by the solid phase of the actuator without power and pressure inputs. The microfluidic flash memory can be re-configured by a new light illumination pattern and common pressure signal. The proposed approach can achieve actuation of arbitrary units in a large-scale array without the need for complex external equipment such as solenoid valves and electrical modules, which leads to significantly simplified system implementation and compact system size. The proposed work therefore provides a flexible, energy-efficient, and low cost multiplexing solution for microfluidic applications based on physical displacements. As an example, the use of the latched microactuator array as "normally closed" or "normally open" microvalves is demonstrated. The phase-change wax is fully encapsulated and thus immune from contamination issues in fluidic environments.

A Layered Solution for Supercomputing Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grider, Gary

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

ASA-FTL: An adaptive separation aware flash translation layer for solid state drives

DOE PAGES

Xie, Wei; Chen, Yong; Roth, Philip C

2016-11-03

Here, the flash-memory based Solid State Drive (SSD) presents a promising storage solution for increasingly critical data-intensive applications due to its low latency (high throughput), high bandwidth, and low power consumption. Within an SSD, its Flash Translation Layer (FTL) is responsible for exposing the SSD’s flash memory storage to the computer system as a simple block device. The FTL design is one of the dominant factors determining an SSD’s lifespan and performance. To reduce the garbage collection overhead and deliver better performance, we propose a new, low-cost, adaptive separation-aware flash translation layer (ASA-FTL) that combines sampling, data clustering and selectivemore » caching of recency information to accurately identify and separate hot/cold data while incurring minimal overhead. We use sampling for light-weight identification of separation criteria, and our dedicated selective caching mechanism is designed to save the limited RAM resource in contemporary SSDs. Using simulations of ASA-FTL with both real-world and synthetic workloads, we have shown that our proposed approach reduces the garbage collection overhead by up to 28% and the overall response time by 15% compared to one of the most advanced existing FTLs. We find that the data clustering using a small sample size provides significant performance benefit while only incurring a very small computation and memory cost. In addition, our evaluation shows that ASA-FTL is able to adapt to the changes in the access pattern of workloads, which is a major advantage comparing to existing fixed data separation methods.« less

Sentinel 2 MMFU: The first European Mass Memory System Based on NAND-Flash Storage Technology

NASA Astrophysics Data System (ADS)

Staehle, M.; Cassel, M.; Lonsdorfer, U.; Gliem, F.; Walter, D.; Fichna, T.

2011-08-01

Sentinel-2 is the multispectral optical mission of the EU-ESA GMES (Global Monitoring for Environment and Security) program, currently under development by Astrium-GmbH in Friedrichshafen (Germany) for a launch in 2013. The mission features a 490 Mbit/s optical sensor operating at high duty cycles, requiring in turn a large 2.4 Tbit on-board storage capacity.The required storage capacity motivated the selection of the NAND-Flash technology which was already secured by a lengthy period (2004-2009) of detailed testing, analysis and qualification by Astrium GmbH, IDA and ESTEC. The mass memory system is currently being realized by Astrium GmbH.

Radiation Issues and Applications of Floating Gate Memories

NASA Technical Reports Server (NTRS)

Scheick, L. Z.; Nguyen, D. N.

2000-01-01

The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

A Layered Solution for Supercomputing Storage

ScienceCinema

Grider, Gary

2018-06-13

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

Nonvolatile Memory Technology for Space Applications

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics

NASA Astrophysics Data System (ADS)

Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo

2014-01-01

The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.

76 FR 13207 - In the Matter of Certain Flash Memory and Products Containing Same Notice of Request for...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-10

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-685] In the Matter of Certain Flash Memory and Products Containing Same Notice of Request for Statements on the Public Interest Section 337 of the Tariff Act of 1930 provides that if the Commission finds a violation it shall exclude the...

Radiation Tests on 2Gb NAND Flash Memories

NASA Technical Reports Server (NTRS)

Nguyen, Duc N.; Guertin, Steven M.; Patterson, J. D.

2006-01-01

We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

NASA Astrophysics Data System (ADS)

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-01

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

PubMed

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-23

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Low-voltage all-inorganic perovskite quantum dot transistor memory

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Zhang, Yating; Zhang, Heng; Yu, Yu; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Che, Yongli; Jin, Lufan; Li, Yifan; Li, Qingyan; Dai, Haitao; Yang, Junbo; Yao, Jianquan

2018-05-01

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (˜2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.

Non-volatile memory based on the ferroelectric photovoltaic effect

PubMed Central

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

NASA Astrophysics Data System (ADS)

Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng

2016-12-01

This paper investigates the impact of post-metallization annealing (PMA) in pure nitrogen ambient on the reliability of 65 nm NOR-type floating-gate flash memory devices. The experimental results show that, with PMA process, the cycling performance of flash cells, especially for the erasing speed is obviously degraded compared to that without PMA. It is found that the bulk oxide traps and tunnel oxide/Si interface traps are significantly increased with PMA treatment. The water/moisture residues left in the interlayer dielectric layers diffuse to tunnel oxide during PMA process is considered to be responsible for these traps generation, which further enhances the degradation of erase performance. Skipping PMA treatment is proposed to suppress the water diffusion effect on erase performance degradation of flash cells.

Nonvolatile memory chips: critical technology for high-performance recce systems

NASA Astrophysics Data System (ADS)

Kaufman, Bruce

2000-11-01

Airborne recce systems universally require nonvolatile storage of recorded data. Both present and next generation designs make use of flash memory chips. Flash memory devices are in high volume use for a variety of commercial products ranging form cellular phones to digital cameras. Fortunately, commercial applications call for increasing capacities and fast write times. These parameters are important to the designer of recce recorders. Of economic necessity COTS devices are used in recorders that must perform in military avionics environments. Concurrently, recording rates are moving to $GTR10Gb/S. Thus to capture imagery for even a few minutes of record time, tactically meaningful solid state recorders will require storage capacities in the 100s of Gbytes. Even with memory chip densities at present day 512Mb, such capacities require thousands of chips. The demands on packaging technology are daunting. This paper will consider the differing flash chip architectures, both available and projected and discuss the impact on recorder architecture and performance. Emerging nonvolatile memory technologies, FeRAM AND MIRAM will be reviewed with regard to their potential use in recce recorders.

The flash memory battle: How low can we go?

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Wismans, Onno; Grim, Kees; Finders, Jo; Dusa, Mircea; Birkner, Robert; Richter, Rigo; Scherübl, Thomas

2008-03-01

With the introduction of the TWINSCAN XT:1900Gi the limit of the water based hyper-NA immersion lithography has been reached in terms of resolution. With a numerical aperture of 1.35 a single expose resolution of 36.5nm half pitch has been demonstrated. However the practical resolution limit in production will be closer to 40nm half pitch, without having to go to double patterning alike strategies. In the relentless Flash memory market the performance of the exposure tool is stretched to the limit for a competitive advantage and cost-effective product. In this paper we will present the results of an experimental study of the resolution limit of the NAND-Flash Memory Gate layer for a production-worthy process on the TWINSCAN XT:1900Gi. The entire gate layer will be qualified in terms of full wafer CD uniformity, aberration sensitivities for the different wordlines and feature-center placement errors for 38, 39, 40 and 43nm half pitch design rule. In this study we will also compare the performance of a binary intensity mask to a 6% attenuated phase shift mask and look at strategies to maximize Depth of Focus, and to desensitize the gate layer for lens aberrations and placement errors. The mask is one of the dominant contributors to the CD uniformity budget of the flash gate layer. Therefore the wafer measurements are compared to aerial image measurements of the mask using AIMSTM 45-193i to separate the mask contribution from the scanner contribution to the final imaging performance.

Development of highly reliable static random access memory for 40-nm embedded split gate-MONOS flash memory

NASA Astrophysics Data System (ADS)

Okamoto, Shin-ichi; Maekawa, Kei-ichi; Kawashima, Yoshiyuki; Shiba, Kazutoshi; Sugiyama, Hideki; Inoue, Masao; Nishida, Akio

2015-04-01

High quality static random access memory (SRAM) for 40-nm embedded MONOS flash memory with split gate (SG-MONOS) was developed. Marginal failure, which results in threshold voltage/drain current tailing and outliers of SRAM transistors, occurs when using a conventional SRAM structure. These phenomena can be explained by not only gate depletion but also partial depletion and percolation path formation in the MOS channel. A stacked poly-Si gate structure can suppress these phenomena and achieve high quality SRAM without any defects in the 6σ level and with high affinity to the 40-nm SG-MONOS process was developed.

A hot hole-programmed and low-temperature-formed SONOS flash memory

PubMed Central

2013-01-01

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film. PMID:23899050

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu

2015-06-24

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. Themore » device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.« less

Assessing Server Fault Tolerance and Disaster Recovery Implementation in Thin Client Architectures

DTIC Science & Technology

2007-09-01

server • Windows 2003 server Processor AMD Geode GX Memory 512MB Flash/256MB DDR RAM I/O/Peripheral Support • VGA-type video output (DB-15...2000 Advanced Server Processor AMD Geode NX 1500 Memory • 256MB or 512MB or 1GB DDR SDRAM • 1GB or 512MB Flash I/O/Peripheral Support • SiS741 GX

TID and SEE Response of an Advanced Samsung 4G NAND Flash Memory

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Friendlich, M.; Howard, J. W.; Berg, M. D.; Kim, H. S.; Irwin, T. L.; LaBel, K. A.

2007-01-01

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment.

Data Movement Dominates: Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacob, Bruce L.

Over the past three years in this project, what we have observed is that the primary reason for data movement in large-scale systems is that the per-node capacity is not large enough—i.e., one of the solutions to the data-movement problem (certainly not the only solution that is required, but a significant one nonetheless) is to increase per-node capacity so that inter-node traffic is reduced. This unfortunately is not as simple as it sounds. Today’s main memory systems for datacenters, enterprise computing systems, and supercomputers, fail to provide high per-socket capacity [Dirik & Jacob 2009; Cooper-Balis et al. 2012], except atmore » extremely high price points (factors of 10–100x the cost/bit of consumer main-memory systems) [Stokes 2008]. The reason is that our choice of technology for today’s main memory systems—i.e., DRAM, which we have used as a main-memory technology since the 1970s [Jacob et al. 2007]—can no longer keep up with our needs for density and price per bit. Main memory systems have always been built from the cheapest, densest, lowest-power memory technology available, and DRAM is no longer the cheapest, the densest, nor the lowest-power storage technology out there. It is now time for DRAM to go the way that SRAM went: move out of the way for a cheaper, slower, denser storage technology, and become a cache instead. This inflection point has happened before, in the context of SRAM yielding to DRAM. There was once a time that SRAM was the storage technology of choice for all main memories [Tomasulo 1967; Thornton 1970; Kidder 1981]. However, once DRAM hit volume production in the 1970s and 80s, it supplanted SRAM as a main memory technology because it was cheaper, and it was denser. It also happened to be lower power, but that was not the primary consideration of the day. At the time, it was recognized that DRAM was much slower than SRAM, but it was only at the supercomputer level (For instance the Cray X-MP in the 1980s and its follow-on, the Cray Y-MP, in the 1990s) that could one afford to build ever- larger main memories out of SRAM—the reasoning for moving to DRAM was that an appropriately designed memory hierarchy, built of DRAM as main memory and SRAM as a cache, would approach the performance of SRAM, at the price-per-bit of DRAM [Mashey 1999]. Today it is quite clear that, were one to build an entire multi-gigabyte main memory out of SRAM instead of DRAM, one could improve the performance of almost any computer system by up to an order of magnitude—but this option is not even considered, because to build that system would be prohibitively expensive. It is now time to revisit the same design choice in the context of modern technologies and modern systems. For reasons both technical and economic, we can no longer afford to build ever-larger main memory systems out of DRAM. Flash memory, on the other hand, is significantly cheaper and denser than DRAM and therefore should take its place. While it is true that flash is significantly slower than DRAM, one can afford to build much larger main memories out of flash than out of DRAM, and we show that an appropriately designed memory hierarchy, built of flash as main memory and DRAM as a cache, will approach the performance of DRAM, at the price-per-bit of flash. In our studies as part of this project, we have investigated Non-Volatile Main Memory (NVMM), a new main-memory architecture for large-scale computing systems, one that is specifically designed to address the weaknesses described previously. In particular, it provides the following features: non-volatility: The bulk of the storage is comprised of NAND flash, and in this organization DRAM is used only as a cache, not as main memory. Furthermore, the flash is journaled, which means that operations such as checkpoint/restore are already built into the system. 1+ terabytes of storage per socket: SSDs and DRAM DIMMs have roughly the same form factor (several square inches of PCB surface area), and terabyte SSDs are now commonplace. performance approaching that of DRAM: DRAM is used as a cache to the flash system. price-per-bit approaching that of NAND: Flash is currently well under $0.50 per gigabyte; DDR3 SDRAM is currently just over $10 per gigabyte [Newegg 2014]. Even today, one can build an easily affordable main memory system with a terabyte or more of NAND storage per CPU socket (which would be extremely expensive were one to use DRAM), and our cycle- accurate, full-system experiments show that this can be done at a performance point that lies within a factor of two of DRAM.« less

Saccades to remembered targets: the effects of smooth pursuit and illusory stimulus motion

NASA Technical Reports Server (NTRS)

Zivotofsky, A. Z.; Rottach, K. G.; Averbuch-Heller, L.; Kori, A. A.; Thomas, C. W.; Dell'Osso, L. F.; Leigh, R. J.

1996-01-01

1. Measurements were made in four normal human subjects of the accuracy of saccades to remembered locations of targets that were flashed on a 20 x 30 deg random dot display that was either stationary or moving horizontally and sinusoidally at +/-9 deg at 0.3 Hz. During the interval between the target flash and the memory-guided saccade, the "memory period" (1.4 s), subjects either fixated a stationary spot or pursued a spot moving vertically sinusoidally at +/-9 deg at 0.3 Hz. 2. When saccades were made toward the location of targets previously flashed on a stationary background as subjects fixated the stationary spot, median saccadic error was 0.93 deg horizontally and 1.1 deg vertically. These errors were greater than for saccades to visible targets, which had median values of 0.59 deg horizontally and 0.60 deg vertically. 3. When targets were flashed as subjects smoothly pursued a spot that moved vertically across the stationary background, median saccadic error was 1.1 deg horizontally and 1.2 deg vertically, thus being of similar accuracy to when targets were flashed during fixation. In addition, the vertical component of the memory-guided saccade was much more closely correlated with the "spatial error" than with the "retinal error"; this indicated that, when programming the saccade, the brain had taken into account eye movements that occurred during the memory period. 4. When saccades were made to targets flashed during attempted fixation of a stationary spot on a horizontally moving background, a condition that produces a weak Duncker-type illusion of horizontal movement of the primary target, median saccadic error increased horizontally to 3.2 deg but was 1.1 deg vertically. 5. When targets were flashed as subjects smoothly pursued a spot that moved vertically on the horizontally moving background, a condition that induces a strong illusion of diagonal target motion, median saccadic error was 4.0 deg horizontally and 1.5 deg vertically; thus the horizontal error was greater than under any other experimental condition. 6. In most trials, the initial saccade to the remembered target was followed by additional saccades while the subject was still in darkness. These secondary saccades, which were executed in the absence of visual feedback, brought the eye closer to the target location. During paradigms involving horizontal background movement, these corrections were more prominent horizontally than vertically. 7. Further measurements were made in two subjects to determine whether inaccuracy of memory-guided saccades, in the horizontal plane, was due to mislocalization at the time that the target flashed, misrepresentation of the trajectory of the pursuit eye movement during the memory period, or both. 8. The magnitude of the saccadic error, both with and without corrections made in darkness, was mislocalized by approximately 30% of the displacement of the background at the time that the target flashed. The magnitude of the saccadic error also was influenced by net movement of the background during the memory period, corresponding to approximately 25% of net background movement for the initial saccade and approximately 13% for the final eye position achieved in darkness. 9. We formulated simple linear models to test specific hypotheses about which combinations of signals best describe the observed saccadic amplitudes. We tested the possibilities that the brain made an accurate memory of target location and a reliable representation of the eye movement during the memory period, or that one or both of these was corrupted by the illusory visual stimulus. Our data were best accounted for by a model in which both the working memory of target location and the internal representation of the horizontal eye movements were corrupted by the illusory visual stimulus. We conclude that extraretinal signals played only a minor role, in comparison with visual estimates of the direction of gaze, in planning eye movements to remembered targ.

Remotely Powered Reconfigurable Receiver for Extreme Environment Sensing Platforms

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.

2012-01-01

Wireless sensors connected in a local network offer revolutionary exploration capabilities, but the current solutions do not work in extreme environments of low temperatures (200K) and low to moderate radiation levels (<50 krad). These sensors (temperature, radiation, infrared, etc.) would need to operate outside the spacecraft/ lander and be totally independent of power from the spacecraft/lander. Flash memory field-programmable gate arrays (FPGAs) are being used as the main signal processing and protocol generation platform in a new receiver. Flash-based FPGAs have been shown to have at least 100 reduced standby power and 10 reduction operating power when compared to normal SRAM-based FPGA technology.

Radiation Effects on Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Nguyen, D. N.; Guertin, S.; Swift, G. M.; Johnston, A. H.

1998-01-01

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

NASA Technical Reports Server (NTRS)

Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

2001-01-01

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Interactions of numerical and temporal stimulus characteristics on the control of response location by brief flashes of light.

PubMed

Fetterman, J Gregor; Killeen, P Richard

2011-09-01

Pigeons pecked on three keys, responses to one of which could be reinforced after 3 flashes of the houselight, to a second key after 6, and to a third key after 12. The flashes were arranged according to variable-interval schedules. Response allocation among the keys was a function of the number of flashes. When flashes were omitted, transitions occurred very late. Increasing flash duration produced a leftward shift in the transitions along a number axis. Increasing reinforcement probability produced a leftward shift, and decreasing reinforcement probability produced a rightward shift. Intermixing different flash rates within sessions separated allocations: Faster flash rates shifted the functions sooner in real time, but later in terms of flash count, and conversely for slower flash rates. A model of control by fading memories of number and time was proposed.

A microcomputer-based daily living activity recording system.

PubMed

Matsuoka, Shingo; Yonezawa, Yoshiharu; Maki, Hiromichi; Ogawa, Hidekuni; Hahn, Allen W; Thayer, Julian F; Caldwell, W Morton

2003-01-01

A new daily living activity recording system has been developed for monitoring health conditions and living patterns, such as respiration, posture, activity/rest ratios and general activity level. The system employs a piezoelectric sensor, a dual axis accelerometer, two low-power active filters, a low-power 8-bit single chip microcomputer and a 128 MB compact flash memory. The piezoelectric sensor, whose electrical polarization voltage is produced by mechanical strain, detects body movements. Its high-frequency output components reflect body movements produced by walking and running activities, while the low frequency components are mainly respiratory. The dual axis accelerometer detects, from body X and Y tilt angles, whether the patient is standing, sitting or lying down (prone, supine, left side or right side). The detected respiratory, behavior and posture signals are stored by the compact flash memory. After recording, these data are downloaded to a desktop computer and analyzed.

Analysis of the Evaluation of a New Glucose Meter with Integrated Self-Management Software and USB Connectivity

PubMed Central

Crowe, Daniel J

2011-01-01

Glucose meter technology has not kept up with the advances that have occurred in other sectors in mobile and health care technology. A new device that combines strip-based capillary blood glucose monitoring and USB flash drive technology is evaluated in an industry-funded study in a cohort of patients and health care professionals. The expanded memory capacity of flash drives allows the software program to be stored on the device for analyzing the blood glucose readings in memory. The study analyzes the device for precision and accuracy as well as for ease of adaptability and usage. This analysis focuses on shortcomings in the design of the study and methodology in addition to features of the hardware device itself. Although the device has distinct advantages over many devices on the market, a challenge is made to device manufacturers to encourage further innovation. PMID:22027309

3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate

NASA Astrophysics Data System (ADS)

Oh, Jae-Sub; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung-Kyu; Lee, Hi-Deok; Lee, Ga-Won

2013-08-01

In this paper, a gate-all-around bandgap-engineered silicon-oxide-nitride-oxide-silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.

Effects of botanicals and combined hormone therapy on cognition in postmenopausal women.

PubMed

Maki, Pauline M; Rubin, Leah H; Fornelli, Deanne; Drogos, Lauren; Banuvar, Suzanne; Shulman, Lee P; Geller, Stacie E

2009-01-01

The aim of this study was to characterize the effects of red clover, black cohosh, and combined hormone therapy on cognitive function in comparison to placebo in women with moderate to severe vasomotor symptoms. In a phase II randomized, double-blind, placebo-controlled study, 66 midlife women (of 89 from a parent study; mean age, 53 y) with 35 or more weekly hot flashes were randomized to receive red clover (120 mg), black cohosh (128 mg), 0.625 mg conjugated equine estrogens plus 2.5 mg medroxyprogesterone acetate (CEE/MPA), or placebo. Participants completed measures of verbal memory (primary outcome) and other cognitive measures (secondary outcomes) before and during the 12th treatment month. A subset of 19 women completed objective, physiological measures of hot flashes using ambulatory skin conductance monitors. Neither of the botanical treatments had an impact on any cognitive measure. Compared with placebo, CEE/MPA led to a greater decline in verbal learning (one of five verbal memory measures). This effect just missed statistical significance (P = 0.057) in unadjusted analyses but reached significance (P = 0.02) after adjusting for vasomotor symptoms. Neither of the botanical treatment groups showed a change in verbal memory that differed from the placebo group (Ps > 0.28), even after controlling for improvements in hot flashes. In secondary outcomes, CEE/MPA led to a decrease in immediate digit recall and an improvement in letter fluency. Only CEE/MPA significantly reduced objective hot flashes. Results indicate that a red clover (phytoestrogen) supplement or black cohosh has no effects on cognitive function. CEE/MPA reduces objective hot flashes but worsens some aspects of verbal memory.

Effects of Botanicals and Combined Hormone Therapy on Cognition in Postmenopausal Women

PubMed Central

Maki, Pauline M.; Rubin, Leah H.; Fornelli, Deanne; Drogos, Lauren; Banuvar, Suzanne; Shulman, Lee P.; Geller, Stacie E.

2009-01-01

Objective To characterize the effects of red clover, black cohosh, and combined hormone therapy on cognitive function in comparison to placebo in women with moderate to severe vasomotor symptoms. Design In a Phase II randomized, double-blind, placebo-controlled study, 66 midlife women (out of 89 from a parent study; mean age=53 y) with ≥ 35 weekly hot flashes were randomized to receive red clover (120 mg), black cohosh (128 mg), CEE/MPA (0.625 mg conjugated equine estrogens plus 2.5 mg medroxyprogesterone acetate), or placebo. Participants completed measures of verbal memory (primary outcome) and other cognitive measures (secondary outcomes) before and during the 12th treatment month. A subset of 19 women completed objective, physiological measures of hot flashes using ambulatory skin conductance monitors. Results There was no impact of either of the botanical treatments on any cognitive measure. Compared to placebo, CEE/MPA led to greater decline in verbal learning (one of five verbal memory measures). This effect just missed statistical significance (p=0.057) in unadjusted analyses, but reached significance (p=.02) after adjusting for vasomotor symptoms. Neither botanical treatment group showed a change in verbal memory that differed from the placebo group (ps>0.28), even after controlling for improvements in hot flashes. In secondary outcomes, CEE/MPA led to a decrease in immediate digit recall and an improvement in letter fluency. Only CEE/MPA significantly reduced objective hot flashes. Conclusions Results indicate no effects of a red clover (phytoestrogen) supplement or black cohosh on cognitive function. CEE/MPA reduces objective hot flashes but worsens some aspects of verbal memory. PMID:19590458

Out of sight but not out of mind: the neurophysiology of iconic memory in the superior temporal sulcus.

PubMed

Keysers, C; Xiao, D-K; Foldiak, P; Perrett, D I

2005-05-01

Iconic memory, the short-lasting visual memory of a briefly flashed stimulus, is an important component of most models of visual perception. Here we investigate what physiological mechanisms underlie this capacity by showing rapid serial visual presentation (RSVP) sequences with and without interstimulus gaps to human observers and macaque monkeys. For gaps of up to 93 ms between consecutive images, human observers and neurones in the temporal cortex of macaque monkeys were found to continue processing a stimulus as if it was still present on the screen. The continued firing of neurones in temporal cortex may therefore underlie iconic memory. Based on these findings, a neurophysiological vision of iconic memory is presented.

Titanium oxide nonvolatile memory device and its application

NASA Astrophysics Data System (ADS)

Wang, Wei

In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be explained by thermal dissolution model, and bipolar switching by local redox reaction model. Since it is generally agreed that the memory switching of TiOx NVM devices is based on conductive filaments, reusability of these conductive filaments becomes an intriguing issue to determine the memory device's endurance. A 1X3 cross-point test structure is built to investigate whether conductive filaments can be reused after RESET. It is found that the conductive filament is destroyed during unipolar switching, while can be reused during bipolar switching. The result is a good indication that bipolar switching should have better endurance than unipolar switching. Finally a novel application of the two-terminal resistive switching NVM devices is demonstrated. To reduce SRAM leakage power, we propose a nonvolatile SRAM cell with two back-up NVM devices. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty in this approach. Only a slight performance penalty is expected.

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

NASA Astrophysics Data System (ADS)

Tomita, Toshihiro; Miyaji, Kousuke

2015-04-01

The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude ΔVth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, ΔVth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, ΔVth distribution slope λ cannot be determined by only considering RDF and single trap.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

NRAM: a disruptive carbon-nanotube resistance-change memory.

PubMed

Gilmer, D C; Rueckes, T; Cleveland, L

2018-04-03

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

NRAM: a disruptive carbon-nanotube resistance-change memory

NASA Astrophysics Data System (ADS)

Gilmer, D. C.; Rueckes, T.; Cleveland, L.

2018-04-01

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

The influence of cognitive load on spatial search performance.

PubMed

Longstaffe, Kate A; Hood, Bruce M; Gilchrist, Iain D

2014-01-01

During search, executive function enables individuals to direct attention to potential targets, remember locations visited, and inhibit distracting information. In the present study, we investigated these executive processes in large-scale search. In our tasks, participants searched a room containing an array of illuminated locations embedded in the floor. The participants' task was to press the switches at the illuminated locations on the floor so as to locate a target that changed color when pressed. The perceptual salience of the search locations was manipulated by having some locations flashing and some static. Participants were more likely to search at flashing locations, even when they were explicitly informed that the target was equally likely to be at any location. In large-scale search, attention was captured by the perceptual salience of the flashing lights, leading to a bias to explore these targets. Despite this failure of inhibition, participants were able to restrict returns to previously visited locations, a measure of spatial memory performance. Participants were more able to inhibit exploration to flashing locations when they were not required to remember which locations had previously been visited. A concurrent digit-span memory task further disrupted inhibition during search, as did a concurrent auditory attention task. These experiments extend a load theory of attention to large-scale search, which relies on egocentric representations of space. High cognitive load on working memory leads to increased distractor interference, providing evidence for distinct roles for the executive subprocesses of memory and inhibition during large-scale search.

Patterning optimization for 55nm design rule DRAM/flash memory using production-ready customized illuminations

NASA Astrophysics Data System (ADS)

Chen, Ting; Van Den Broeke, Doug; Hsu, Stephen; Hsu, Michael; Park, Sangbong; Berger, Gabriel; Coskun, Tamer; de Vocht, Joep; Chen, Fung; Socha, Robert; Park, JungChul; Gronlund, Keith

2005-11-01

Illumination optimization, often combined with optical proximity corrections (OPC) to the mask, is becoming one of the critical components for a production-worthy lithography process for 55nm-node DRAM/Flash memory devices and beyond. At low-k1, e.g. k1<0.31, both resolution and imaging contrast can be severely limited by the current imaging tools while using the standard illumination sources. Illumination optimization is a process where the source shape is varied, in both profile and intensity distribution, to achieve enhancement in the final image contrast as compared to using the non-optimized sources. The optimization can be done efficiently for repetitive patterns such as DRAM/Flash memory cores. However, illumination optimization often produces source shapes that are "free-form" like and they can be too complex to be directly applicable for production and lack the necessary radial and annular symmetries desirable for the diffractive optical element (DOE) based illumination systems in today's leading lithography tools. As a result, post-optimization rendering and verification of the optimized source shape are often necessary to meet the production-ready or manufacturability requirements and ensure optimal performance gains. In this work, we describe our approach to the illumination optimization for k1<0.31 DRAM/Flash memory patterns, using an ASML XT:1400i at NA 0.93, where the all necessary manufacturability requirements are fully accounted for during the optimization. The imaging contrast in the resist is optimized in a reduced solution space constrained by the manufacturability requirements, which include minimum distance between poles, minimum opening pole angles, minimum ring width and minimum source filling factor in the sigma space. For additional performance gains, the intensity within the optimized source can vary in a gray-tone fashion (eight shades used in this work). Although this new optimization approach can sometimes produce closely spaced solutions as gauged by the NILS based metrics, we show that the optimal and production-ready source shape solution can be easily determined by comparing the best solutions to the "free-form" solution and more importantly, by their respective imaging fidelity and process latitude ranking. Imaging fidelity and process latitude simulations are performed to analyze the impact and sensitivity of the manufacturability requirements on pattern specific illumination optimizations using ASML XT:1400i and other latest imaging systems. Mask model based OPC (MOPC) is applied and optimized sequentially to ensure that the CD uniformity requirements are met.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

SSD Market Overview

NASA Astrophysics Data System (ADS)

Wong, G.

The unparalleled cost and form factor advantages of NAND flash memory has driven 35 mm photographic film, floppy disks and one-inch hard drives to extinction. Due to its compelling price/performance characteristics, NAND Flash memory is now expanding its reach into the once-exclusive domain of hard disk drives and DRAM in the form of Solid State Drives (SSDs). Driven by the proliferation of thin and light mobile devices and the need for near-instantaneous accessing and sharing of content through the cloud, SSDs are expected to become a permanent fixture in the computing infrastructure.

Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

NASA Astrophysics Data System (ADS)

Edmonds, Larry D.; Irom, Farokh; Allen, Gregory R.

2017-08-01

A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Design and realization of flash translation layer in tiny embedded system

NASA Astrophysics Data System (ADS)

Ren, Xiaoping; Sui, Chaoya; Luo, Zhenghua; Cao, Wenji

2018-05-01

We design a solution of tiny embedded device NAND Flash storage system on the basis of deeply studying the characteristics of widely used NAND Flash in the embedded devices in order to adapt to the development of intelligent interconnection trend and solve the storage problem of large data volume in tiny embedded system. The hierarchical structure and function purposes of the system are introduced. The design and realization of address mapping, error correction, bad block management, wear balance, garbage collection and other algorithms in flash memory transformation layer are described in details. NAND Flash drive and management are realized on STM32 micro-controller, thereby verifying design effectiveness and feasibility.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

CD uniformity control for thick resist process

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Wang, Weihung; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2017-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked flash cell array has been proposed. In constructing 3D NAND flash memories, the higher bit number per area is achieved by increasing the number of stacked layers. Thus the so-called "staircase" patterning to form electrical connection between memory cells and word lines has become one of the primarily critical processes in 3D memory manufacture. To provide controllable critical dimension (CD) with good uniformity involving thick photo-resist has also been of particular concern for staircase patterning. The CD uniformity control has been widely investigated with relatively thinner resist associated with resolution limit dimension but thick resist coupling with wider dimension. This study explores CD uniformity control associated with thick photo-resist processing. Several critical parameters including exposure focus, exposure dose, baking condition, pattern size and development recipe, were found to strongly correlate with the thick photo-resist profile accordingly affecting the CD uniformity control. To minimize the within-wafer CD variation, the slightly tapered resist profile is proposed through well tailoring the exposure focus and dose together with optimal development recipe. Great improvements on DCD (ADI CD) and ECD (AEI CD) uniformity as well as line edge roughness were achieved through the optimization of photo resist profile.

Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation

NASA Astrophysics Data System (ADS)

Kim, Do-Bin; Kwon, Dae Woong; Kim, Seunghyun; Lee, Sang-Ho; Park, Byung-Gook

2018-02-01

To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.

Flash drive memory apparatus and method

NASA Technical Reports Server (NTRS)

Hinchey, Michael G. (Inventor)

2010-01-01

A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass storage controller, and at least one other interface for a memory device, other than a USB interface, the at least one other interface being connected to the USB mass storage controller.

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

PubMed Central

Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

2016-01-01

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

Numerical model of a single nanocrystal devoted to the study of disordered nanocrystal floating gates of new flash memories

NASA Astrophysics Data System (ADS)

Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie

2011-05-01

The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.

Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory

NASA Astrophysics Data System (ADS)

Wang, Chenjie; Huo, Zongliang; Liu, Ziyu; Liu, Yu; Cui, Yanxiang; Wang, Yumei; Li, Fanghua; Liu, Ming

2013-07-01

The effects of interfacial fluorination on the metal/Al2O3/HfO2/SiO2/Si (MAHOS) memory structure have been investigated. By comparing MAHOS memories with and without interfacial fluorination, it was identified that the deterioration of the performance and reliability of MAHOS memories is mainly due to the formation of an interfacial layer that generates excess oxygen vacancies at the interface. Interfacial fluorination suppresses the growth of the interfacial layer, which is confirmed by X-ray photoelectron spectroscopy depth profile analysis, increases enhanced program/erase efficiency, and improves data retention characteristics. Moreover, it was observed that fluorination at the SiO-HfO interface achieves a more effective performance enhancement than that at the HfO-AlO interface.

Portable Electromyograph

NASA Technical Reports Server (NTRS)

De Luca, Gianluca; De Luca, Carlo J.; Bergman, Per

2004-01-01

A portable electronic apparatus records electromyographic (EMG) signals in as many as 16 channels at a sampling rate of 1,024 Hz in each channel. The apparatus (see figure) includes 16 differential EMG electrodes (each electrode corresponding to one channel) with cables and attachment hardware, reference electrodes, an input/output-and-power-adapter unit, a 16-bit analog-to-digital converter, and a hand-held computer that contains a removable 256-MB flash memory card. When all 16 EMG electrodes are in use, full-bandwidth data can be recorded in each channel for as long as 8 hours. The apparatus is powered by a battery and is small enough that it can be carried in a waist pouch. The computer is equipped with a small screen that can be used to display the incoming signals on each channel. Amplitude and time adjustments of this display can be made easily by use of touch buttons on the screen. The user can also set up a data-acquisition schedule to conform to experimental protocols or to manage battery energy and memory efficiently. Once the EMG data have been recorded, the flash memory card is removed from the EMG apparatus and placed in a flash-memory- card-reading external drive unit connected to a personal computer (PC). The PC can then read the data recorded in the 16 channels. Preferably, before further analysis, the data should be stored in the hard drive of the PC. The data files are opened and viewed on the PC by use of special- purpose software. The software for operation of the apparatus resides in a random-access memory (RAM), with backup power supplied by a small internal lithium cell. A backup copy of this software resides on the flash memory card. In the event of loss of both main and backup battery power and consequent loss of this software, the backup copy can be used to restore the RAM copy after power has been restored. Accessories for this device are also available. These include goniometers, accelerometers, foot switches, and force gauges.

Checkpoint-Restart in User Space

DOE Office of Scientific and Technical Information (OSTI.GOV)

CRUISE implements a user-space file system that stores data in main memory and transparently spills over to other storage, like local flash memory or the parallel file system, as needed. CRUISE also exposes file contents fo remote direct memory access, allowing external tools to copy files to the parallel file system in the background with reduced CPU interruption.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo

2017-08-01

The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device.

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment.

PubMed

Huang, Chi-Hsien; Lin, Chih-Ting; Wang, Jer-Chyi; Chou, Chien; Ye, Yu-Ren; Cheng, Bing-Ming; Lai, Chao-Sung

2012-11-30

A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

The role of spatial selective attention in working memory for locations: evidence from event-related potentials.

PubMed

Awh, E; Anllo-Vento, L; Hillyard, S A

2000-09-01

We investigated the hypothesis that the covert focusing of spatial attention mediates the on-line maintenance of location information in spatial working memory. During the delay period of a spatial working-memory task, behaviorally irrelevant probe stimuli were flashed at both memorized and nonmemorized locations. Multichannel recordings of event-related potentials (ERPs) were used to assess visual processing of the probes at the different locations. Consistent with the hypothesis of attention-based rehearsal, early ERP components were enlarged in response to probes that appeared at memorized locations. These visual modulations were similar in latency and topography to those observed after explicit manipulations of spatial selective attention in a parallel experimental condition that employed an identical stimulus display.

High Performance Data Transfer for Distributed Data Intensive Sciences

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Chin; Cottrell, R 'Les' A.; Hanushevsky, Andrew B.

We report on the development of ZX software providing high performance data transfer and encryption. The design scales in: computation power, network interfaces, and IOPS while carefully balancing the available resources. Two U.S. patent-pending algorithms help tackle data sets containing lots of small files and very large files, and provide insensitivity to network latency. It has a cluster-oriented architecture, using peer-to-peer technologies to ease deployment, operation, usage, and resource discovery. Its unique optimizations enable effective use of flash memory. Using a pair of existing data transfer nodes at SLAC and NERSC, we compared its performance to that of bbcp andmore » GridFTP and determined that they were comparable. With a proof of concept created using two four-node clusters with multiple distributed multi-core CPUs, network interfaces and flash memory, we achieved 155Gbps memory-to-memory over a 2x100Gbps link aggregated channel and 70Gbps file-to-file with encryption over a 5000 mile 100Gbps link.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandes, Ana; Pereira, Rita C.; Sousa, Jorge

The Instituto de Plasmas e Fusao Nuclear (IPFN) has developed dedicated re-configurable modules based on field programmable gate array (FPGA) devices for several nuclear fusion machines worldwide. Moreover, new Advanced Telecommunication Computing Architecture (ATCA) based modules developed by IPFN are already included in the ITER catalogue. One of the requirements for re-configurable modules operating in future nuclear environments including ITER is the remote update capability. Accordingly, this work presents an alternative method for FPGA remote programing to be implemented in new ATCA based re-configurable modules. FPGAs are volatile devices and their programming code is usually stored in dedicated flash memoriesmore » for properly configuration during module power-on. The presented method is capable to store new FPGA codes in Serial Peripheral Interface (SPI) flash memories using the PCIexpress (PCIe) network established on the ATCA back-plane, linking data acquisition endpoints and the data switch blades. The method is based on the Xilinx Quick Boot application note, adapted to PCIe protocol and ATCA based modules. (authors)« less

Optimization of a PCRAM Chip for high-speed read and highly reliable reset operations

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Chen, Houpeng; Li, Xi; Wang, Qian; Fan, Xi; Hu, Jiajun; Lei, Yu; Zhang, Qi; Tian, Zhen; Song, Zhitang

2016-10-01

The widely used traditional Flash memory suffers from its performance limits such as its serious crosstalk problems, and increasing complexity of floating gate scaling. Phase change random access memory (PCRAM) becomes one of the most potential nonvolatile memories among the new memory techniques. In this paper, a 1M-bit PCRAM chip is designed based on the SMIC 40nm CMOS technology. Focusing on the read and write performance, two new circuits with high-speed read operation and highly reliable reset operation are proposed. The high-speed read circuit effectively reduces the reading time from 74ns to 40ns. The double-mode reset circuit improves the chip yield. This 1M-bit PCRAM chip has been simulated on cadence. After layout design is completed, the chip will be taped out for post-test.

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Modeling of SONOS Memory Cell Erase Cycle

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

2011-01-01

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Non-Volatile Memory Technology Symposium 2001: Proceedings

NASA Technical Reports Server (NTRS)

Aranki, Nazeeh; Daud, Taher; Strauss, Karl

2001-01-01

This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory

NASA Astrophysics Data System (ADS)

Yu, Hyung Suk

Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference. Many new memory technologies are being considered as alternatives to flash memory in an effort to overcome these limitations. Ferroelectric Field-Effect Transistor (FeFET) is one of the main emerging candidates because of its structural similarity to conventional FETs and fast switching speed. Nevertheless, the performance of FeFETs have not been systematically compared and analyzed against other competing technologies. In this work, we first benchmark the intrinsic performance of FeFETs and other memories by simulations in order to identify the strengths and weaknesses of FeFETs. To simulate realistic memory applications, we compare memories on an array structure. For the comparisons, we construct an accurate delay model and verify it by benchmarking against exact HSPICE simulations. Second, we propose an accurate model for FeFET memory window since the existing model has limitations. The existing model assumes symmetric operation voltages but it is not valid for the practical asymmetric operation voltages. In this modeling, we consider practical operation voltages and device dimensions. Also, we investigate realistic changes of memory window over time and retention time of FeFETs. Last, to improve memory window and subthreshold swing, we suggest nonplanar junctionless structures for FeFETs. Using the suggested structures, we study the dimensional dependences of crucial parameters like memory window and subthreshold swing and also analyze key interference mechanisms.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers

NASA Astrophysics Data System (ADS)

Kajiyama, Shinya; Fujito, Masamichi; Kasai, Hideo; Mizuno, Makoto; Yamaguchi, Takanori; Shinagawa, Yutaka

A novel 300MHz embedded flash memory for dual-core microcontrollers with a shared ROM architecture is proposed. One of its features is a three-stage pipeline read operation, which enables reduced access pitch and therefore reduces performance penalty due to conflict of shared ROM accesses. Another feature is a highly sensitive sense amplifier that achieves efficient pipeline operation with two-cycle latency one-cycle pitch as a result of a shortened sense time of 0.63ns. The combination of the pipeline architecture and proposed sense amplifiers significantly reduces access-conflict penalties with shared ROM and enhances performance of 32-bit RISC dual-core microcontrollers by 30%.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

2011-08-01

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Smart Cards and remote entrusting

NASA Astrophysics Data System (ADS)

Aussel, Jean-Daniel; D'Annoville, Jerome; Castillo, Laurent; Durand, Stephane; Fabre, Thierry; Lu, Karen; Ali, Asad

Smart cards are widely used to provide security in end-to-end communication involving servers and a variety of terminals, including mobile handsets or payment terminals. Sometime, end-to-end server to smart card security is not applicable, and smart cards must communicate directly with an application executing on a terminal, like a personal computer, without communicating with a server. In this case, the smart card must somehow trust the terminal application before performing some secure operation it was designed for. This paper presents a novel method to remotely trust a terminal application from the smart card. For terminals such as personal computers, this method is based on an advanced secure device connected through the USB and consisting of a smart card bundled with flash memory. This device, or USB dongle, can be used in the context of remote untrusting to secure portable applications conveyed in the dongle flash memory. White-box cryptography is used to set the secure channel and a mechanism based on thumbprint is described to provide external authentication when session keys need to be renewed. Although not as secure as end-to-end server to smart card security, remote entrusting with smart cards is easy to deploy for mass-market applications and can provide a reasonable level of security.

Configurable test bed design for nanosats to qualify commercial and customized integrated circuits

NASA Astrophysics Data System (ADS)

Guareschi, W.; Azambuja, J.; Kastensmidt, F.; Reis, R.; Durao, O.; Schuch, N.; Dessbesel, G.

The use of small satellites has increased substantially in recent years due to the reduced cost of their development and launch, as well to the flexibility offered by commercial components. The test bed is a platform that allows components to be evaluated and tested in space. It is a flexible platform, which can be adjusted to a wide quantity of components and interfaces. This work proposes the design and implementation of a test bed suitable for test and evaluation of commercial circuits used in nanosatellites. The development of such a platform allows developers to reduce the efforts in the integration of components and therefore speed up the overall system development time. The proposed test bed is a configurable platform implemented using a Field Programmable Gate Array (FPGA) that controls the communication protocols and connections to the devices under test. The Flash-based ProASIC3E FPGA from Microsemi is used as a control system. This adaptive system enables the control of new payloads and softcores for test and validation in space. Thus, the integration can be easily performed through configuration parameters. It is intended for modularity. Each component connected to the test bed can have a specific interface programmed using a hardware description language (HDL). The data of each component is stored in embedded memories. Each component has its own memory space. The size of the allocated memory can be also configured. The data transfer priority can be set and packaging can be added to the logic, when needed. Communication with peripheral devices and with the Onboard Computer (OBC) is done through the pre-implemented protocols, such as I2C (Inter-Integrated Circuit), SPI (Serial Peripheral Interface) and external memory control. In loco primary tests demonstrated the control system's functionality. The commercial ProASIC3E FPGA family is not space-flight qualified, but tests have been made under Total Ionizing Dose (TID) showing its robustness up to 25 kr- ds (Si). When considering proton and heavy ions, flash-based FPGAs provide immunity to configuration loss and low bit-flips susceptibility in flash memory. In this first version of the test bed two components are connected to the controller FPGA: a commercial magnetometer and a hardened test chip. The embedded FPGA implements a Single Event Effects (SEE) hardened microprocessor and few other soft-cores to be used in space. This test bed will be used in the NanoSatC-BR1, the first Brazilian Cubesat scheduled to be launched in mid-2013.

Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories.

PubMed

Younis, Adnan; Chu, Dewei; Shah, Abdul Hadi; Du, Haiwei; Li, Sean

2017-01-18

As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta 2 O 5 , SiO 2 , etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe 3 O 4 film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag + , while Cu prefers to oxidize into Cu 2+ first, followed by Cu/Cu + oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe 3 O 4 -based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.

A qualitative study on personal information management (PIM) in clinical and basic sciences faculty members of a medical university in Iran

PubMed Central

Sedghi, Shahram; Abdolahi, Nida; Azimi, Ali; Tahamtan, Iman; Abdollahi, Leila

2015-01-01

Background: Personal Information Management (PIM) refers to the tools and activities to save and retrieve personal information for future uses. This study examined the PIM activities of faculty members of Iran University of Medical Sciences (IUMS) regarding their preferred PIM tools and four aspects of acquiring, organizing, storing and retrieving personal information. Methods: The qualitative design was based on phenomenology approach and we carried out 37 interviews with clinical and basic sciences faculty members of IUMS in 2014. The participants were selected using a random sampling method. All interviews were recorded by a digital voice recorder, and then transcribed, codified and finally analyzed using NVivo 8 software. Results: The use of PIM electronic tools (e-tools) was below expectation among the studied sample and just 37% had reasonable knowledge of PIM e-tools such as, external hard drivers, flash memories etc. However, all participants used both paper and electronic devices to store and access information. Internal mass memories (in Laptops) and flash memories were the most used e-tools to save information. Most participants used "subject" (41.00%) and "file name" (33.7 %) to save, organize and retrieve their stored information. Most users preferred paper-based rather than electronic tools to keep their personal information. Conclusion: Faculty members had little knowledge about PIM techniques and tools. Those who organized personal information could easier retrieve the stored information for future uses. Enhancing familiarity with PIM tools and training courses of PIM tools and techniques are suggested. PMID:26793648

Tree-based solvers for adaptive mesh refinement code FLASH - I: gravity and optical depths

NASA Astrophysics Data System (ADS)

Wünsch, R.; Walch, S.; Dinnbier, F.; Whitworth, A.

2018-04-01

We describe an OctTree algorithm for the MPI parallel, adaptive mesh refinement code FLASH, which can be used to calculate the gas self-gravity, and also the angle-averaged local optical depth, for treating ambient diffuse radiation. The algorithm communicates to the different processors only those parts of the tree that are needed to perform the tree-walk locally. The advantage of this approach is a relatively low memory requirement, important in particular for the optical depth calculation, which needs to process information from many different directions. This feature also enables a general tree-based radiation transport algorithm that will be described in a subsequent paper, and delivers excellent scaling up to at least 1500 cores. Boundary conditions for gravity can be either isolated or periodic, and they can be specified in each direction independently, using a newly developed generalization of the Ewald method. The gravity calculation can be accelerated with the adaptive block update technique by partially re-using the solution from the previous time-step. Comparison with the FLASH internal multigrid gravity solver shows that tree-based methods provide a competitive alternative, particularly for problems with isolated or mixed boundary conditions. We evaluate several multipole acceptance criteria (MACs) and identify a relatively simple approximate partial error MAC which provides high accuracy at low computational cost. The optical depth estimates are found to agree very well with those of the RADMC-3D radiation transport code, with the tree-solver being much faster. Our algorithm is available in the standard release of the FLASH code in version 4.0 and later.

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

Novel approach for low-cost muzzle flash detection system

NASA Astrophysics Data System (ADS)

Voskoboinik, Asher

2008-04-01

A low-cost muzzle flash detection based on CMOS sensor technology is proposed. This low-cost technology makes it possible to detect various transient events with characteristic times between dozens of microseconds up to dozens of milliseconds while sophisticated algorithms successfully separate them from false alarms by utilizing differences in geometrical characteristics and/or temporal signatures. The proposed system consists of off-the-shelf smart CMOS cameras with built-in signal and image processing capabilities for pre-processing together with allocated memory for storing a buffer of images for further post-processing. Such a sensor does not require sending giant amounts of raw data to a real-time processing unit but provides all calculations in-situ where processing results are the output of the sensor. This patented CMOS muzzle flash detection concept exhibits high-performance detection capability with very low false-alarm rates. It was found that most false-alarms due to sun glints are from sources at distances of 500-700 meters from the sensor and can be distinguished by time examination techniques from muzzle flash signals. This will enable to eliminate up to 80% of falsealarms due to sun specular reflections in the battle field. Additional effort to distinguish sun glints from suspected muzzle flash signal is made by optimization of the spectral band in Near-IR region. The proposed system can be used for muzzle detection of small arms, missiles and rockets and other military applications.

Roll-to-roll nanopatterning using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ahn, Sean; Ganapathisubramanian, Maha; Miller, Mike; Yang, Jack; Choi, Jin; Xu, Frank; Resnick, Douglas J.; Sreenivasan, S. V.

2012-03-01

The ability to pattern materials at the nanoscale can enable a variety of applications ranging from high density data storage, displays, photonic devices and CMOS integrated circuits to emerging applications in the biomedical and energy sectors. These applications require varying levels of pattern control, short and long range order, and have varying cost tolerances. Extremely large area R2R manufacturing on flexible substrates is ubiquitous for applications such as paper and plastic processing. It combines the benefits of high speed and inexpensive substrates to deliver a commodity product at low cost. The challenge is to extend this approach to the realm of nanopatterning and realize similar benefits. The cost of manufacturing is typically driven by speed (or throughput), tool complexity, cost of consumables (materials used, mold or master cost, etc.), substrate cost, and the downstream processing required (annealing, deposition, etching, etc.). In order to achieve low cost nanopatterning, it is imperative to move towards high speed imprinting, less complex tools, near zero waste of consumables and low cost substrates. The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. In this paper we address the key challenges for roll based nanopatterning by introducing a novel concept: Ink Jet based Roll-to-Roll Nanopatterning. To address this challenge, we have introduced a J-FIL based demonstrator product, the LithoFlex 100. Topics that are discussed in the paper include tool design and process performance. In addition, we have used the LithoFlex 100 to fabricate high performance wire grid polarizers on flexible polycarbonate (PC) films. Transmission of better than 80% and extinction ratios on the order of 4500 have been achieved.

Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory

NASA Astrophysics Data System (ADS)

Choe, Byeong-In; Park, Byung-Gook; Lee, Jong-Ho

2013-06-01

The program disturbance characteristic in the three-dimensional (3D) stack NAND flash was analyzed for the first time in terms of string select line (SSL) threshold voltage (Vth) and p-type body doping profile. From the edge word line (W/L) program disturbance, we can observe the boosted channel potential loss as a function of SSL Vth and body doping profile for SSL device. According to simulation work, a high Vth of the SSL device is required to suppress channel leakage during programming. When the body doping of the SSL device is high in the channel, there is a large band bending near the gate edge of the SSL adjacent to the edge W/L cell of boosted cell strings, which generates significantly electron-hole pairs. The generated electrons decreases the boosted channel potential, resulting in increase of program disturbance of the inhibit strings. Through optimization of the body doping profile of the SSL device, both channel leakage and the program disturbance are successfully suppressed for a highly reliable 3D stack NAND flash memory cell operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP)more » technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup −2} eV{sup −1} to 3.66 × 10{sup 13} cm{sup −2} eV{sup −1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.« less

Phonological and Sensory Short-Term Memory Are Correlates and Both Affected in Developmental Dyslexia

ERIC Educational Resources Information Center

Laasonen, Marja; Virsu, Veijo; Oinonen, Suvi; Sandbacka, Mirja; Salakari, Anita; Service, Elisabet

2012-01-01

We investigated whether poor short-term memory (STM) in developmental dyslexia affects the processing of sensory stimulus sequences in addition to phonological material. STM for brief binary non-verbal stimuli (light flashes, tone bursts, finger touches, and their crossmodal combinations) was studied in 20 Finnish adults with dyslexia and 24…

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Memory Decline in Peri- and Post-menopausal Women: The Potential of Mind–Body Medicine to Improve Cognitive Performance

PubMed Central

Sliwinski, Jim R; Johnson, Aimee K; Elkins, Gary R

2014-01-01

Cognitive decline is a frequent complaint during the menopause transition and among post-menopausal women. Changes in memory correspond with diminished estrogen production. Further, many peri- and post-menopausal women report sleep concerns, depression, and hot flashes, and these factors may contribute to cognitive decline. Hormone therapy can increase estrogen but is contraindicated for many women. Mind–body medicine has been shown to have beneficial effects on sleep, mood, and hot flashes, among post-menopausal women. Further, mind–body medicine holds potential in addressing symptoms of cognitive decline post-menopause. This study proposes an initial framework for how mind–body interventions may improve cognitive performance and inform future research seeking to identify the common and specific factors associated with mind–body medicine for addressing memory decline in peri- and post-menopausal women. It is our hope that this article will eventually lead to a more holistic and integrative approach to the treatment of cognitive deficits in peri- and post-menopausal women. PMID:25125972

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

An Analysis of MARSIS Radar Flash Memory Data from Lunae Planum, Mars: Searching for Subsurface Structures.

NASA Astrophysics Data System (ADS)

Caprarelli, G.; Orosei, R.; Mastrogiuseppe, M.; Cartacci, M.

2017-12-01

Lunae Planum is a Martian plain measuring approximately 1000 km in width and 2000 km in length, centered at coordinates 294°E-11°N. MOLA elevations range from +2500 m to +500 m in the south, gently sloping northward to -500 m. The plain is part of a belt of terrains located between the southern highlands and the northern lowlands, that are transitional in character (e.g., by elevation, age and morphology). These transitional terrains are poorly understood, in part because of their relative lack of major geomorphological features. They record however a very significant part of Mars's geologic history. The most evident features on Lunae Planum's Hesperian surface are regularly spaced, longitudinally striking, wrinkle ridges. These indicate the presence of blind thrust faults cutting through thick stacks of layers of volcanic or sedimentary rocks. The presence of fluidized ejecta craters scattered all over the region suggests also the presence of ice or volatiles in the subsurface. In a preliminary study of Lunae Planum's subsurface we used the Mars Express ground penetrating radar MARSIS dataset [1], in order to detect reflectors that could indicate the presence of fault planes or layering. Standard radargrams however, provided no evidence of changes in value of dielectric constant that could indicate possible geologic discontinuities or stratification of physically diverse materials. We thus started a new investigation based on processing of raw MARSIS data. Here we report on the preliminary results of this study. We searched the MARSIS archive for raw data stored in flash memory. When operating with flash storage, the radar collects 2 frequency bands along-track covering a distance = 100-250 km, depending on the orbiter altitude [2]. We found flash memory data from 24 orbits over the area. We processed the data focusing radar returns in off-nadir directions, to maximize the likelihood of detecting sloping subsurface structures, including those striking parallel to the Mars Express sub-polar orbits. We plan to follow this study by applying a new processor aimed at improving the resolution and signal to noise ratio of the data. [1] Caprarelli et al. (2017), LPSC 48, 1720. [2] Watters et al. (2017), LPSC 48, 1693.

Endurance cycling results in extreme environments

NASA Technical Reports Server (NTRS)

Guertin, S. M.; Nguyen, D. N.; Scheick, L. Z.

2003-01-01

A new test bed for life testing flash memories in extreme environments is introducted. the test bed is based on a state-of-the-art development board. Since space applications often desire state-of-the-art devices, such a basis seems appropriate. Comparison of this tester to other such systems, including those with data presented here in the past is made. Limitations of different testers for varying applications are discussed. Recently developed data, using this test bed is also presented.

Memristive behavior in a junctionless flash memory cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orak, Ikram; Department of Physics, Faculty of Science and Art, Bingöl University, 12000 Bingöl; Ürel, Mustafa

2015-06-08

We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits themore » pinched hysteresis of a memristor and in the unoptimized device, R{sub off}/R{sub on} ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts R{sub off}/R{sub on} ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 10{sup 6 }s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.« less

Temporal dynamics of encoding, storage and reallocation of visual working memory

PubMed Central

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2012-01-01

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here we examine the temporal evolution of memory resolution, based on observers’ ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory, and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cueing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event, but was maintained if it indicated an object of particular relevance to the task. These cueing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information. PMID:21911739

Temporal dynamics of encoding, storage, and reallocation of visual working memory.

PubMed

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2011-09-12

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here, we examine the temporal evolution of memory resolution, based on observers' ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cuing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event but was maintained if it indicated an object of particular relevance to the task. These cuing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information.

77 FR 74222 - Certain Dynamic Random Access Memory and NAND Flash Memory Devices and Products Containing Same...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-13

..., California; Kingston Technology Co., Inc. of Fountain Valley, California; Logitek International S.A. (``LISA...: Clint Gerdine, Esq., Office of the General Counsel, U.S. International Trade Commission, 500 E Street SW....m. to 5:15 p.m.) in the Office of the Secretary, U.S. International Trade Commission, 500 E Street...

Investigating of Memory - Colours of Intellectually Disabled Children and Virtual Game Addict Students

NASA Astrophysics Data System (ADS)

Sik Lányi, Cecília

We describe an investigation of memory colours. For this investigation Flash test software was developed. 75 observers used this test software in 4 groups: average elementary school children (aged: 8-9 years), intellectually disabled children (age: 9-15), virtual game addict university students (average age: 20) and university students who play with VR games rarely or never (average age: 20). In this pilot test we investigated the difference of memory colours of these 4 groups.

Aging changes in the female reproductive system

MedlinePlus

... Other common changes include: Menopause symptoms such as hot flashes, moodiness, headaches, and trouble sleeping Problems with short-term memory Decrease in breast tissue Lower sex drive (libido) and sexual response Increased risk of ...

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Seidleck, Christina; Kim, Hak; Phan, Anthony; LaBel, Kenneth

2017-01-01

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

Radiation Test Challenges for Scaled Commerical Memories

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

2007-01-01

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

MRAM Technology Status

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2013-01-01

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

PubMed

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

Active Flash: Performance-Energy Tradeoffs for Out-of-Core Processing on Non-Volatile Memory Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S

2012-01-01

In this abstract, we study the performance and energy tradeoffs involved in migrating data analysis into the flash device, a process we refer to as Active Flash. The Active Flash paradigm is similar to 'active disks', which has received considerable attention. Active Flash allows us to move processing closer to data, thereby minimizing data movement costs and reducing power consumption. It enables true out-of-core computation. The conventional definition of out-of-core solvers refers to an approach to process data that is too large to fit in the main memory and, consequently, requires access to disk. However, in Active Flash, processing outsidemore » the host CPU literally frees the core and achieves real 'out-of-core' analysis. Moving analysis to data has long been desirable, not just at this level, but at all levels of the system hierarchy. However, this requires a detailed study on the tradeoffs involved in achieving analysis turnaround under an acceptable energy envelope. To this end, we first need to evaluate if there is enough computing power on the flash device to warrant such an exploration. Flash processors require decent computing power to run the internal logic pertaining to the Flash Translation Layer (FTL), which is responsible for operations such as address translation, garbage collection (GC) and wear-leveling. Modern SSDs are composed of multiple packages and several flash chips within a package. The packages are connected using multiple I/O channels to offer high I/O bandwidth. SSD computing power is also expected to be high enough to exploit such inherent internal parallelism within the drive to increase the bandwidth and to handle fast I/O requests. More recently, SSD devices are being equipped with powerful processing units and are even embedded with multicore CPUs (e.g. ARM Cortex-A9 embedded processor is advertised to reach 2GHz frequency and deliver 5000 DMIPS; OCZ RevoDrive X2 SSD has 4 SandForce controllers, each with 780MHz max frequency Tensilica core). Efforts that take advantage of the available computing cycles on the processors on SSDs to run auxiliary tasks other than actual I/O requests are beginning to emerge. Kim et al. investigate database scan operations in the context of processing on the SSDs, and propose dedicated hardware logic to speed up scans. Also, cluster architectures have been explored, which consist of low-power embedded CPUs coupled with small local flash to achieve fast, parallel access to data. Processor utilization on SSD is highly dependent on workloads and, therefore, they can be idle during periods with no I/O accesses. We propose to use the available processing capability on the SSD to run tasks that can be offloaded from the host. This paper makes the following contributions: (1) We have investigated Active Flash and its potential to optimize the total energy cost, including power consumption on the host and the flash device; (2) We have developed analytical models to analyze the performance-energy tradeoffs for Active Flash, by treating the SSD as a blackbox, this is particularly valuable due to the proprietary nature of the SSD internal hardware; and (3) We have enhanced a well-known SSD simulator (from MSR) to implement 'on-the-fly' data compression using Active Flash. Our results provide a window into striking a balance between energy consumption and application performance.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanheusden, K.; Warren, W.L.; Devine, R.A.B.

It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protonsmore » are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).« less

Moore's law realities for recording systems and memory storage components: HDD, tape, NAND, and optical

NASA Astrophysics Data System (ADS)

Fontana, Robert E.; Decad, Gary M.

2018-05-01

This paper describes trends in the storage technologies associated with Linear Tape Open (LTO) Tape cartridges, hard disk drives (HDD), and NAND Flash based storage devices including solid-state drives (SSD). This technology discussion centers on the relationship between cost/bit and bit density and, specifically on how the Moore's Law perception that areal density doubling and cost/bit halving every two years is no longer being achieved for storage based components. This observation and a Moore's Law Discussion are demonstrated with data from 9-year storage technology trends, assembled from publically available industry reporting sources.

A microcontroller-based implantable nerve stimulator used for rats.

PubMed

Sha, Hong; Zheng, Zheng; Wang, Yan; Ren, Chaoshi

2005-01-01

A microcontroller-based stimulator that can be flexible programmed after it has been implanted into a rat was studied. Programmability enables implanted stimulators to generate customized, complex protocols for experiments. After implantation, a coded light pulse train that contains information of specific identification will unlock a certain stimulator. If a command that changing the parameters is received, the microcontroller will update its flash memory after it affirms the commands. The whole size of it is only 1.6 cubic centimeters, and it can work for a month. The devices have been successfully used in animal behavior experiments, especially on rats.

JTAG-based remote configuration of FPGAs over optical fibers

DOE PAGES

Deng, B.; Xu, H.; Liu, C.; ...

2015-01-28

In this study, a remote FPGA-configuration method based on JTAG extension over optical fibers is presented. The method takes advantage of commercial components and ready-to-use software such as iMPACT and does not require any hardware or software development. The method combines the advantages of the slow remote JTAG configuration and the fast local flash memory configuration. The method has been verified successfully and used in the Demonstrator of Liquid-Argon Trigger Digitization Board (LTDB) for the ATLAS liquid argon calorimeter Phase-I trigger upgrade. All components on the FPGA side are verified to meet the radiation tolerance requirements.

82 FR 35991 - Certain Flash Memory Devices and Components Thereof; Notice of Commission Determination Not To...

Federal Register 2010, 2011, 2012, 2013, 2014

2017-08-02

... following respondents: SanDisk LLC of Milpitas, California; Western Digital Corporation of Irvine, California; Western Digital Technologies, Inc. of Milpitas, California; SanDisk Limited of Yokohama, Japan...

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

NASA Astrophysics Data System (ADS)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

Design of a Multi-Level/Analog Ferroelectric Memory Device

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2006-01-01

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

External Verification of SCADA System Embedded Controller Firmware

DTIC Science & Technology

2012-03-01

microprocessor and read-only memory (ROM) or flash memory for storing firmware and control logic [5],[8]. A PLC typically has three software levels as shown in...implementing different firmware. Because PLCs are in effect a microprocessor device, an analysis of the current research on embedded devices is important...Electronics Engineers (IEEE) published a 15 best practices guide for firmware control on microprocessors [44]. IEEE suggests that microprocessors

77 FR 35718 - Certain Universal Serial Bus (“USB”) Portable Storage Devices, Including USB Flash Drives and...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-14

... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are... Sunnyvale, California; Kingston Technology Company, Inc. of Fountain Valley, California; Patriot Memory, LLC...

Total ionizing dose effect in an input/output device for flash memory

NASA Astrophysics Data System (ADS)

Liu, Zhang-Li; Hu, Zhi-Yuan; Zhang, Zheng-Xuan; Shao, Hua; Chen, Ming; Bi, Da-Wei; Ning, Bing-Xu; Zou, Shi-Chang

2011-12-01

Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Mistaking the recent past for the present: false seeing by older adults.

PubMed

Jacoby, Larry L; Rogers, Chad S; Bishara, Anthony J; Shimizu, Yujiro

2012-03-01

Results of three experiments revealed that older, as compared to young, adults are more reliant on context when "seeing" a briefly flashed word that was preceded by a prime. In a congruent condition, the prime was the same word as flashed (e.g., DIRT dirt) whereas in an incongruent condition, the prime differed in a single letter from the word that was flashed (DART dirt). Following their attempt to identify the flashed word, participants were asked to report whether they had "seen" the flashed word or, instead, had responded on some other basis (knowing or guessing). Older adults showed dramatically higher false seeing by reporting the prime on incongruent trials and claiming to have seen it flashed. This was true even though a titration procedure was used to equate the performance of young and older adults on baseline trials which did not provide a biasing context. Results of Experiment 3 related age differences in false seeing to willingness to respond when given the option to withhold responses. Convergence of results with those showing higher false memory and false hearing are interpreted as evidence that older adults are less able to avoid misleading effects of context. That lessened ability may be associated with decline in frontal lobe functioning.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

NASA Astrophysics Data System (ADS)

Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

2014-10-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Active Flash: Out-of-core Data Analytics on Flash Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S

2012-01-01

Next generation science will increasingly come to rely on the ability to perform efficient, on-the-fly analytics of data generated by high-performance computing (HPC) simulations, modeling complex physical phenomena. Scientific computing workflows are stymied by the traditional chaining of simulation and data analysis, creating multiple rounds of redundant reads and writes to the storage system, which grows in cost with the ever-increasing gap between compute and storage speeds in HPC clusters. Recent HPC acquisitions have introduced compute node-local flash storage as a means to alleviate this I/O bottleneck. We propose a novel approach, Active Flash, to expedite data analysis pipelines bymore » migrating to the location of the data, the flash device itself. We argue that Active Flash has the potential to enable true out-of-core data analytics by freeing up both the compute core and the associated main memory. By performing analysis locally, dependence on limited bandwidth to a central storage system is reduced, while allowing this analysis to proceed in parallel with the main application. In addition, offloading work from the host to the more power-efficient controller reduces peak system power usage, which is already in the megawatt range and poses a major barrier to HPC system scalability. We propose an architecture for Active Flash, explore energy and performance trade-offs in moving computation from host to storage, demonstrate the ability of appropriate embedded controllers to perform data analysis and reduction tasks at speeds sufficient for this application, and present a simulation study of Active Flash scheduling policies. These results show the viability of the Active Flash model, and its capability to potentially have a transformative impact on scientific data analysis.« less

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

NASA Astrophysics Data System (ADS)

Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

2016-08-01

NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

Computer Game Play Reduces Intrusive Memories of Experimental Trauma via Reconsolidation-Update Mechanisms.

PubMed

James, Ella L; Bonsall, Michael B; Hoppitt, Laura; Tunbridge, Elizabeth M; Geddes, John R; Milton, Amy L; Holmes, Emily A

2015-08-01

Memory of a traumatic event becomes consolidated within hours. Intrusive memories can then flash back repeatedly into the mind's eye and cause distress. We investigated whether reconsolidation-the process during which memories become malleable when recalled-can be blocked using a cognitive task and whether such an approach can reduce these unbidden intrusions. We predicted that reconsolidation of a reactivated visual memory of experimental trauma could be disrupted by engaging in a visuospatial task that would compete for visual working memory resources. We showed that intrusive memories were virtually abolished by playing the computer game Tetris following a memory-reactivation task 24 hr after initial exposure to experimental trauma. Furthermore, both memory reactivation and playing Tetris were required to reduce subsequent intrusions (Experiment 2), consistent with reconsolidation-update mechanisms. A simple, noninvasive cognitive-task procedure administered after emotional memory has already consolidated (i.e., > 24 hours after exposure to experimental trauma) may prevent the recurrence of intrusive memories of those emotional events. © The Author(s) 2015.

Computer Game Play Reduces Intrusive Memories of Experimental Trauma via Reconsolidation-Update Mechanisms

PubMed Central

James, Ella L.; Bonsall, Michael B.; Hoppitt, Laura; Tunbridge, Elizabeth M.; Geddes, John R.; Milton, Amy L.

2015-01-01

Memory of a traumatic event becomes consolidated within hours. Intrusive memories can then flash back repeatedly into the mind’s eye and cause distress. We investigated whether reconsolidation—the process during which memories become malleable when recalled—can be blocked using a cognitive task and whether such an approach can reduce these unbidden intrusions. We predicted that reconsolidation of a reactivated visual memory of experimental trauma could be disrupted by engaging in a visuospatial task that would compete for visual working memory resources. We showed that intrusive memories were virtually abolished by playing the computer game Tetris following a memory-reactivation task 24 hr after initial exposure to experimental trauma. Furthermore, both memory reactivation and playing Tetris were required to reduce subsequent intrusions (Experiment 2), consistent with reconsolidation-update mechanisms. A simple, noninvasive cognitive-task procedure administered after emotional memory has already consolidated (i.e., > 24 hours after exposure to experimental trauma) may prevent the recurrence of intrusive memories of those emotional events. PMID:26133572

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Non-volatile memory for checkpoint storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.

A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, themore » non-volatile memory is a pluggable flash memory card.« less

Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash

NASA Astrophysics Data System (ADS)

Zhang, Yu; Jin, Lei; Jiang, Dandan; Zou, Xingqi; Zhao, Zhiguo; Gao, Jing; Zeng, Ming; Zhou, Wenbin; Tang, Zhaoyun; Huo, Zongliang

2018-03-01

In order to optimize program disturbance characteristics effectively, a characterization approach that measures top select transistor (TSG) leakage from bit-line is proposed to quantify TSG leakage under program inhibit condition in 3D NAND flash memory. Based on this approach, the effect of Vth modulation of two-cell TSG on leakage is evaluated. By checking the dependence of leakage and corresponding program disturbance on upper and lower TSG Vth, this approach is validated. The optimal Vth pattern with high upper TSG Vth and low lower TSG Vth has been suggested for low leakage current and high boosted channel potential. It is found that upper TSG plays dominant role in preventing drain induced barrier lowering (DIBL) leakage from boosted channel to bit-line, while lower TSG assists to further suppress TSG leakage by providing smooth potential drop from dummy WL to edge of TSG, consequently suppressing trap assisted band-to-band tunneling current (BTBT) between dummy WL and TSG.

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Seidleck, Christina; Kim, Hak; Phan, Anthony; Label, Kenneth

2017-01-01

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

CoNNeCT Baseband Processor Module

NASA Technical Reports Server (NTRS)

Yamamoto, Clifford K; Jedrey, Thomas C.; Gutrich, Daniel G.; Goodpasture, Richard L.

2011-01-01

A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs). The BPM was developed from a requirement to provide sufficient computing power and memory storage to conduct experiments for a Software Defined Radio (SDR) to be implemented. The flight SDR uses the AT697 SPARC processor with on-chip data and instruction cache. The non-volatile memory has been increased from a 20-Mbit EEPROM (electrically erasable programmable read only memory) to a 4-Gbit Flash, managed by the RTAX2000 Housekeeper, allowing more programs and FPGA bit-files to be stored. The volatile memory has been increased from a 20-Mbit SRAM (static random access memory) to a 1.25-Gbit SDRAM (synchronous dynamic random access memory), providing additional memory space for more complex operating systems and programs to be executed on the SPARC. All memory is EDAC (error detection and correction) protected, while the SPARC processor implements fault protection via TMR (triple modular redundancy) architecture. Further capability over prior BPM designs includes the addition of a second FPGA to implement features beyond the resources of a single FPGA. Both FPGAs are implemented with Xilinx Virtex-II and are interconnected by a 96-bit bus to facilitate data exchange. Dedicated 1.25- Gbit SDRAMs are wired to each Xilinx FPGA to accommodate high rate data buffering for SDR applications as well as independent SpaceWire interfaces. The RTAX2000 manages scrub and configuration of each Xilinx.

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer PEB temperature non-uniformity attributed to wafer warpage is uncorrectable, and the photo-resist profile variation is believed to affect across-wafer etch bias uniformity to some degree.

PCM-Based Durable Write Cache for Fast Disk I/O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhuo; Wang, Bin; Carpenter, Patrick

2012-01-01

Flash based solid-state devices (FSSDs) have been adopted within the memory hierarchy to improve the performance of hard disk drive (HDD) based storage system. However, with the fast development of storage-class memories, new storage technologies with better performance and higher write endurance than FSSDs are emerging, e.g., phase-change memory (PCM). Understanding how to leverage these state-of-the-art storage technologies for modern computing systems is important to solve challenging data intensive computing problems. In this paper, we propose to leverage PCM for a hybrid PCM-HDD storage architecture. We identify the limitations of traditional LRU caching algorithms for PCM-based caches, and develop amore » novel hash-based write caching scheme called HALO to improve random write performance of hard disks. To address the limited durability of PCM devices and solve the degraded spatial locality in traditional wear-leveling techniques, we further propose novel PCM management algorithms that provide effective wear-leveling while maximizing access parallelism. We have evaluated this PCM-based hybrid storage architecture using applications with a diverse set of I/O access patterns. Our experimental results demonstrate that the HALO caching scheme leads to an average reduction of 36.8% in execution time compared to the LRU caching scheme, and that the SFC wear leveling extends the lifetime of PCM by a factor of 21.6.« less

High performance wire grid polarizers using jet and flashTM imprint lithography

NASA Astrophysics Data System (ADS)

Ahn, Sean; Yang, Jack; Miller, Mike; Ganapathisubramanian, Maha; Menezes, Marlon; Choi, Jin; Xu, Frank; Resnick, Douglas J.; Sreenivasan, S. V.

2013-03-01

The ability to pattern materials at the nanoscale can enable a variety of applications ranging from high density data storage, displays, photonic devices and CMOS integrated circuits to emerging applications in the biomedical and energy sectors. These applications require varying levels of pattern control, short and long range order, and have varying cost tolerances. Extremely large area roll to roll (R2R) manufacturing on flexible substrates is ubiquitous for applications such as paper and plastic processing. It combines the benefits of high speed and inexpensive substrates to deliver a commodity product at low cost. The challenge is to extend this approach to the realm of nanopatterning and realize similar benefits. The cost of manufacturing is typically driven by speed (or throughput), tool complexity, cost of consumables (materials used, mold or master cost, etc.), substrate cost, and the downstream processing required (annealing, deposition, etching, etc.). In order to achieve low cost nanopatterning, it is imperative to move towards high speed imprinting, less complex tools, near zero waste of consumables and low cost substrates. The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. In this paper we have developed a roll based J-FIL process and applied it to technology demonstrator tool, the LithoFlex 100, to fabricate large area flexible bilayer wire grid polarizers (WGP) and high performance WGPs on rigid glass substrates. Extinction ratios of better than 10000 were obtained for the glass-based WGPs. Two simulation packages were also employed to understand the effects of pitch, aluminum thickness and pattern defectivity on the optical performance of the WGP devices. It was determined that the WGPs can be influenced by both clear and opaque defects in the gratings, however the defect densities are relaxed relative to the requirements of a high density semiconductor device.

A PDA-based electrocardiogram/blood pressure telemonitor for telemedicine.

PubMed

Bolanos, Marcos; Nazeran, Homayoun; Gonzalez, Izzac; Parra, Ricardo; Martinez, Christopher

2004-01-01

An electrocardiogram (ECG) / blood pressure (BP) telemonitor consisting of comprehensive integration of various electrical engineering concepts, devices, and methods was developed. This personal digital assistant-based (PDAbased) system focused on integration of biopotential amplifiers, photoplethysmographic measurement of blood pressure, microcontroller devices, programming methods, wireless transmission, signal filtering and analysis, interfacing, and long term memory devices (24 hours) to develop a state-of-the-art ECG/BP telemonitor. These instrumentation modules were developed and tested to realize a complete and compact system that could be deployed to assist in telemedicine applications and heart rate variability studies. The specific objective of this device was to facilitate the long term monitoring and recording of ECG and blood pressure signals. This device was able to acquire ECG/BP waveforms, transmit them wirelessly to a PDA, save them onto a compact flash memory, and display them on the LCD screen of the PDA. It was also capable of calculating the heart rate (HR) in beats per minute, and providing systolic and diastolic blood pressure values.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

NASA Astrophysics Data System (ADS)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.

Portable flash lamp reflectance analyzer system and method

NASA Technical Reports Server (NTRS)

Kalshoven, James Edward (Inventor)

1999-01-01

The system and method allow spectroscopic analysis of vegetation or the like without effects from changing sun and cloud conditions, undesired portions of the area of interest or atmospheric disturbances. The system (1) includes a light source (5) such as a xenon flash lamp, a telescope (7), a spectrometer (9), an analog/digital converter (11), a memory (13), a display (15), and an on-board microprocessor (17) or a port (19) for attachment to a laptop computer. The system is taken to an area of interest in the woods (step 41), the vegetation is illuminated from below (step 43) and data are taken (step 45).

A Scalable Multicore Architecture With Heterogeneous Memory Structures for Dynamic Neuromorphic Asynchronous Processors (DYNAPs).

PubMed

Moradi, Saber; Qiao, Ning; Stefanini, Fabio; Indiveri, Giacomo

2018-02-01

Neuromorphic computing systems comprise networks of neurons that use asynchronous events for both computation and communication. This type of representation offers several advantages in terms of bandwidth and power consumption in neuromorphic electronic systems. However, managing the traffic of asynchronous events in large scale systems is a daunting task, both in terms of circuit complexity and memory requirements. Here, we present a novel routing methodology that employs both hierarchical and mesh routing strategies and combines heterogeneous memory structures for minimizing both memory requirements and latency, while maximizing programming flexibility to support a wide range of event-based neural network architectures, through parameter configuration. We validated the proposed scheme in a prototype multicore neuromorphic processor chip that employs hybrid analog/digital circuits for emulating synapse and neuron dynamics together with asynchronous digital circuits for managing the address-event traffic. We present a theoretical analysis of the proposed connectivity scheme, describe the methods and circuits used to implement such scheme, and characterize the prototype chip. Finally, we demonstrate the use of the neuromorphic processor with a convolutional neural network for the real-time classification of visual symbols being flashed to a dynamic vision sensor (DVS) at high speed.

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Liu, Qi; Long, Shibing; Lv, Hangbing; Liu, Ming

2017-08-01

The attractive usability of quantum phenomena in futuristic devices is possible by using zero-dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random-access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed.

Digital Device Architecture and the Safe Use of Flash Devices in Munitions

NASA Technical Reports Server (NTRS)

Katz, Richard B.; Flowers, David; Bergevin, Keith

2017-01-01

Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Digital devices of interest to designers include flash-based microcontrollers and field programmable gate arrays (FPGAs). Almost a decade ago, a study was undertaken to determine if flash-based microcontrollers could be safely used in fuzes and, if so, how should such devices be applied. The results were documented in the Technical Manual for the Use of Logic Devices in Safety Features. This paper will first review the Technical Manual and discuss the rationale behind the suggested architectures for microcontrollers and a brief review of the concern about data retention in flash cells. An architectural feature in the microcontroller under study will be discussed and its use will show how to screen for weak or failed cells during manufacture, storage, or immediately prior to use. As was done for microcontrollers a decade ago, architectures for a flash-based FPGA will be discussed, showing how it can be safely used in fuzes. Additionally, architectures for using non-volatile (including flash-based) storage will be discussed for SRAM-based FPGAs.

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

NASA Astrophysics Data System (ADS)

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-01

Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer.

PubMed

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-08

Crystalline ZrTiO 4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF 4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N 2 O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 10 5 program/erase cycles and 81.8% charge retention after 10 4  sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

Noise Attenuation Performance Assessment of the Joint Helmet Mounted Cueing System (JHMCS)

DTIC Science & Technology

2010-08-01

Flash Drive (CFD) memory (Figure 9) and Sound Professionals SP-TFB-2 Miniature Binaural Microphones with the Sound Professionals SP-SPSB-1 Slim-line...flight noise. Sound Professionals binaural microphones were placed to record both internal and external sounds. One microphone was attached to the

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Future Development of Dense Ferroelectric Memories for Space Applications

NASA Technical Reports Server (NTRS)

Philpy, Stephen C.; Derbenwick, Gary F.

2001-01-01

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

[Development of a video image system for wireless capsule endoscopes based on DSP].

PubMed

Yang, Li; Peng, Chenglin; Wu, Huafeng; Zhao, Dechun; Zhang, Jinhua

2008-02-01

A video image recorder to record video picture for wireless capsule endoscopes was designed. TMS320C6211 DSP of Texas Instruments Inc. is the core processor of this system. Images are periodically acquired from Composite Video Broadcast Signal (CVBS) source and scaled by video decoder (SAA7114H). Video data is transported from high speed buffer First-in First-out (FIFO) to Digital Signal Processor (DSP) under the control of Complex Programmable Logic Device (CPLD). This paper adopts JPEG algorithm for image coding, and the compressed data in DSP was stored to Compact Flash (CF) card. TMS320C6211 DSP is mainly used for image compression and data transporting. Fast Discrete Cosine Transform (DCT) algorithm and fast coefficient quantization algorithm are used to accelerate operation speed of DSP and decrease the executing code. At the same time, proper address is assigned for each memory, which has different speed;the memory structure is also optimized. In addition, this system uses plenty of Extended Direct Memory Access (EDMA) to transport and process image data, which results in stable and high performance.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

NASA Astrophysics Data System (ADS)

Pavel, Akeed A.; Khan, Mehjabeen A.; Kirawanich, Phumin; Islam, N. E.

2008-10-01

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Assessing Semantic Knowledge Using Computer-Based and Paper-Based Media

DTIC Science & Technology

1992-01-01

capitalized upon in this research. Computer-Based Assessment A computer-based game or test, FlashCards (Liggett & Federico, 1986), was adopt- ed and adapted...alterative forms did not have to be specifically or previously programmed as such. FlashCards is analogous to using real flash cards. That is, a...reflects their degree of confidence in their answer. Also, for each answer the student’s response latency is recorded and displayed. FlashCards quizzed

Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

2011-01-01

NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

Static Behavior of Chalcogenide Based Programmable Metallization Cells

NASA Astrophysics Data System (ADS)

Rajabi, Saba

Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.

Flood hazard assessment in areas prone to flash flooding

NASA Astrophysics Data System (ADS)

Kvočka, Davor; Falconer, Roger A.; Bray, Michaela

2016-04-01

Contemporary climate projections suggest that there will be an increase in the occurrence of high-intensity rainfall events in the future. These precipitation extremes are usually the main cause for the emergence of extreme flooding, such as flash flooding. Flash floods are among the most unpredictable, violent and fatal natural hazards in the world. Furthermore, it is expected that flash flooding will occur even more frequently in the future due to more frequent development of extreme weather events, which will greatly increase the danger to people caused by flash flooding. This being the case, there will be a need for high resolution flood hazard maps in areas susceptible to flash flooding. This study investigates what type of flood hazard assessment methods should be used for assessing the flood hazard to people caused by flash flooding. Two different types of flood hazard assessment methods were tested: (i) a widely used method based on an empirical analysis, and (ii) a new, physically based and experimentally calibrated method. Two flash flood events were considered herein, namely: the 2004 Boscastle flash flood and the 2007 Železniki flash flood. The results obtained in this study suggest that in the areas susceptible to extreme flooding, the flood hazard assessment should be conducted using methods based on a mechanics-based analysis. In comparison to standard flood hazard assessment methods, these physically based methods: (i) take into account all of the physical forces, which act on a human body in floodwater, (ii) successfully adapt to abrupt changes in the flow regime, which often occur for flash flood events, and (iii) rapidly assess a flood hazard index in a relatively short period of time.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Because advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

76 FR 25707 - In the Matter of Certain Flash Memory and Products Containing Same; Notice of Commission Decision...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-05-05

... review of the ALJ's determination concerning the ALJ's findings on claim construction, infringement... Commission has also determined to review the ID's construction of the ``extracting'' limitation of claim 8 as... construction of the claim limitation ``accumulatively averaging working conditions of lots previously processed...

Charge injection and discharging of Si nanocrystals and arrays by atomic force microscopy

NASA Technical Reports Server (NTRS)

Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.

2000-01-01

Charge injection and storage in dense arrays of silicon nanocrystals in SiO(sub 2) is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few-or single- electron storage in a small number of nanocrystal elements.

Radiation Hardened Electronics Destined For Severe Nuclear Reactor Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holbert, Keith E.; Clark, Lawrence T.

Post nuclear accident conditions represent a harsh environment for electronics. The full station blackout experience at Fukushima shows the necessity for emergency sensing capabilities in a radiation-enhanced environment. This NEET (Nuclear Energy Enabling Technologies) research project developed radiation hardened by design (RHBD) electronics using commercially available technology that employs commercial off-the-shelf (COTS) devices and present generation circuit fabrication techniques to improve the total ionizing dose (TID) hardness of electronics. Such technology not only has applicability to severe accident conditions but also to facilities throughout the nuclear fuel cycle in which radiation tolerance is required. For example, with TID tolerance tomore » megarads of dose, electronics could be deployed for long-term monitoring, inspection and decontamination missions. The present work has taken a two-pronged approach, specifically, development of both board and application-specific integrated circuit (ASIC) level RHBD techniques. The former path has focused on TID testing of representative microcontroller ICs with embedded flash (eFlash) memory, as well as standalone flash devices that utilize the same fabrication technologies. The standalone flash devices are less complicated, allowing better understanding of the TID response of the crucial circuits. Our TID experiments utilize biased components that are in-situ tested, and in full operation during irradiation. A potential pitfall in the qualification of memory circuits is the lack of rigorous testing of the possible memory states. For this reason, we employ test patterns that include all ones, all zeros, a checkerboard of zeros and ones, an inverse checkerboard, and random data. With experimental evidence of improved radiation response for unbiased versus biased conditions, a demonstration-level board using the COTS devices was constructed. Through a combination of redundancy and power gating, the demonstration board exhibits radiation resilience to over 200 krad. Furthermore, our ASIC microprocessor using RHBD techniques was shown to be fully functional after an exposure of 2.5 Mrad whereas the COTS microcontroller units failed catastrophically at <100 krad. The methods developed in this work can facilitate the long-term viability of radiation-hard robotic systems, thereby avoiding obsolescence issues. As a case in point, the nuclear industry with its low purchasing power does not drive the semiconductor industry strategic plans, and the rapid advancements in electronics technology can leave legacy systems stranded.« less

A portable ECG monitoring device with Bluetooth and Holter capabilities for telemedicine applications.

PubMed

Lucani, Daniel; Cataldo, Giancarlos; Cruz, Julio; Villegas, Guillermo; Wong, Sara

2006-01-01

A prototype of a portable ECG-monitoring device has been developed for clinical and non-clinical environments as part of a telemedicine system to provide remote and continuous surveillance of patients. The device can acquire, store and/or transmit ECG signals to computer-based platforms or specially configured access points (AP) with Intranet/Internet capabilities in order to reach remote monitoring stations. Acquired data can be stored in a flash memory card in FAT16 format for later recovery, or transmitted via Bluetooth or USB to a local station or AP. This data acquisition module (DAM) operates in two modes: Holter and on-line transmission.

Polycrystalline Si nanoparticles and their strong aging enhancement of blue photoluminescence

NASA Astrophysics Data System (ADS)

Yang, Shikuan; Cai, Weiping; Zeng, Haibo; Li, Zhigang

2008-07-01

Nearly spherical polycrystalline Si nanoparticles with 20 nm diameter were fabricated based on laser ablation of silicon wafer immersed in sodium dodecyl sulfate aqueous solution. Such Si nanoparticles consist of disordered areas and ultrafine grains of 3 nm in mean size and exhibit significant photoluminescence in blue region. Importantly, aging at ambient air leads to continuing enhancement of the emission (more than 130 times higher in 16 weeks) showing stable and strong blue emission. This aging enhancement is attributed to progressive passivation of nonradiative Pb centers corresponding to silicon dangling bonds on the particles' surface. This study could be helpful in pushing Si into optoelectronic field and Si-based full color display, biomedical tagging, and flash memories.

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Printing Electronic Components from Copper-Infused Ink and Thermoplastic Mediums

NASA Astrophysics Data System (ADS)

Flowers, Patrick F.

The demand for printable electronics has sharply increased in recent years and is projected to continue to rise. Unfortunately, electronic materials which are suitable for desired applications while being compatible with available printing techniques are still often lacking. This thesis addresses two such challenging areas. In the realm of two-dimensional ink-based printing of electronics, a major barrier to the realization of printable computers that can run programs is the lack of a solution-coatable non-volatile memory with performance metrics comparable to silicon-based devices. To address this deficiency, I developed a nonvolatile memory based on Cu-SiO2 core-shell nanowires that can be printed from solution and exhibits on-off ratios of 106, switching speeds of 50 ns, a low operating voltage of 2 V, and operates for at least 104 cycles without failure. Each of these metrics is similar to or better than Flash memory (the write speed is 20 times faster than Flash). Memory architectures based on the individual memory cells demonstrated here could enable the printing of the more complex, embedded computing devices that are expected to make up an internet of things. Recently, the exploration of three-dimensional printing techniques to fabricate electronic materials began. A suitable general-purpose conductive thermoplastic filament was not available, however. In this work I examine the current state of conductive thermoplastic filaments, including a newly-released highly conductive filament that my lab has produced which we call Electrifi. I focus on the use of dual-material fused filament fabrication (FFF) to 3D print electronic components (conductive traces, resistors, capacitors, inductors) and circuits (a fully-printed high-pass filter). The resistivity of traces printed from conductive thermoplastic filaments made with carbon-black, graphene, and copper as conductive fillers was found to be 12, 0.78, and 0.014 ohm cm, respectively, enabling the creation of resistors with resistances spanning 3 orders of magnitude. The carbon black and graphene filaments were brittle and fractured easily, but the copper-based filament could be bent at least 500 times with little change in its resistance. Impedance measurements made on the thermoplastic filaments demonstrate that the copper-based filament had an impedance similar to a conductive PCB trace at 1 MHz. Dual material 3D printing was used to fabricate a variety of inductors and capacitors with properties that could be predictably tuned by modifying either the geometry of the components, or the materials used to fabricate the components. These resistors, capacitors, and inductors were combined to create a fully 3D printed high-pass filter with properties comparable to its conventional counterparts. The relatively low impedance of the copper-based filament enable its use to 3D print a receiver coil for wireless power transfer. We also demonstrate the ability to embed and connect surface mounted components in 3D printed objects with a low-cost ($1,000 in parts), open source dual-material 3D printer. This work thus demonstrates the potential for FFF 3D printing to create complex, three-dimensional circuits composed of either embedded or fully-printed electronic components.

Flash Floods Simulation Using a Physical based hydrological Model at the Eastern Nile Basin: Case studies; Wadi Assiut, Egypt and Wadi Gumara, Lake Tana, Ethiopia.

NASA Astrophysics Data System (ADS)

Saber, M.; Sefelnasr, A.; Yilmaz, K. K.

2015-12-01

Flash flood is a natural hydrological phenomenon which affects many regions of the world. The behavior and effect of this phenomenon is different from one region to the other regions depending on several issues such as climatology and hydrological and topographical conditions at the target regions. Wadi assiut, Egypt as arid environment, and Gumara catchment, Lake Tana, Ethiopia, as humid conditions have been selected for application. The main target of this work is to simulate flash floods at both catchments considering the difference between them on the flash flood behaviors based on the variability of both of them. In order to simulate the flash floods, remote sensing data and a physical-based distributed hydrological model, Hydro-BEAM-WaS (Hydrological River Basin Environmental Assessment Model incorporating Wadi System) have been integrated used in this work. Based on the simulation results of flash floods in these regions, it was found that the time to reach the maximum peak is very short and consequently the warning time is very short as well. It was found that the flash floods starts from zero flow in arid environment, but on the contrary in humid arid, it starts from Base flow which is changeable based on the simulated events. Distribution maps of flash floods showing the vulnerable regions of these selected areas have been developed. Consequently, some mitigation strategies relying on this study have been introduced. The proposed methodology can be applied effectively for flash flood forecasting at different climate regions, however the paucity of observational data.

Investigation of multilayer WS2 flakes as charge trapping stack layers in non-volatile memories

NASA Astrophysics Data System (ADS)

Wang, Hong; Ren, Deliang; Lu, Chao; Yan, Xiaobing

2018-06-01

In this study, the non-volatile flash memory devices utilize tungsten sulfide flakes as the charge trapping stack layers were fabricated. The sandwiched structure of Pd/ZHO/WS2/ZHO/WS2/SiO2/Si manifests a memory window of 2.26 V and a high density of trapped charges 4.88 × 1012/cm2 under a ±5 V gate sweeping voltage. Moreover, the data retention results of as-fabricated non-volatile memories demonstrate that the high and low capacitance states are enhanced by 3.81% and 3.11%, respectively, after a measurement duration of 1.20 × 104 s. These remarkable achievements are probably attributed to the defects and band gap of WS2 flakes. Besides, the proposed memory fabrication is not only compatible with CMOS manufacturing processes but also gets rid of the high-temperature annealing process. Overall, this proposed non-volatile memory is highly attractive for low voltage, long data retention applications.

Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene.

PubMed

Sun, Yanmei; Lu, Junguo; Ai, Chunpeng; Wen, Dianzhong; Bai, Xuduo

2016-11-09

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 10 4 , which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 10 4 read pulses and possessed a retention time of over 10 5 s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

NIR small arms muzzle flash

NASA Astrophysics Data System (ADS)

Montoya, Joseph; Kennerly, Stephen; Rede, Edward

2010-04-01

Utilization of Near-Infrared (NIR) spectral features in a muzzle flash will allow for small arms detection using low cost silicon (Si)-based imagers. Detection of a small arms muzzle flash in a particular wavelength region is dependent on the intensity of that emission, the efficiency of source emission transmission through the atmosphere, and the relative intensity of the background scene. The NIR muzzle flash signature exists in the relatively large Si spectral response wavelength region of 300 nm-1100 nm, which allows for use of commercial-off-the-shelf (COTS) Si-based detectors. The alkali metal origin of the NIR spectral features in the 7.62 × 39-mm round muzzle flash is discussed, and the basis for the spectral bandwidth is examined, using a calculated Voigt profile. This report will introduce a model of the 7.62 × 39-mm NIR muzzle flash signature based on predicted source characteristics. Atmospheric limitations based on NIR spectral regions are investigated in relation to the NIR muzzle flash signature. A simple signal-to-clutter ratio (SCR) metric is used to predict sensor performance based on a model of radiance for the source and solar background and pixel registered image subtraction.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

NASA Astrophysics Data System (ADS)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Evaluation Data of a High Temperature COTS Flash Memory Module (TI SM28VLT32) for Use in Geothermal Electronics Packages

DOE Data Explorer

Cashion, Avery

2014-08-29

The accompanying raw data is composslection. Each file is 3 columns and tab-delimited with the first column being the data address, the second column being the first byte of the data, and the third column being the second byte of the data.

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

NASA Astrophysics Data System (ADS)

Hou, Zhao-Zhao; Wang, Gui-Lei; Yao, Jia-Xin; Zhang, Qing-Zhu; Yin, Hua-Xiang

2018-05-01

Not Available Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.

Night-day-night sleep-wakefulness monitoring by ambulatory integrated circuit memories.

PubMed

Yamamoto, M; Nakao, M; Katayama, N; Waku, M; Suzuki, K; Irokawa, K; Abe, M; Ueno, T

1999-04-01

A medium-sized portable digital recorder with fully integrated circuit (IC) memories for sleep monitoring has been developed. It has five amplifiers for EEG, EMG, EOG, ECG, and a signal of body acceleration or respiration sound, four event markers, an 8 ch A/D converter, a digital signal processor (DSP), 192 Mbytes IC flash memories, and batteries. The whole system weighs 1200 g including batteries and is put into a small bag worn on the subject's waist or carried in their hand. The sampling rate for each input channel is programmable through the DSP. This apparatus is valuable for continuously monitoring the states of sleep-wakefulness over 24 h, making a night-day-night recording possible in a hospital, home, or car.

Individual differences in working memory capacity predict visual attention allocation.

PubMed

Bleckley, M Kathryn; Durso, Francis T; Crutchfield, Jerry M; Engle, Randall W; Khanna, Maya M

2003-12-01

To the extent that individual differences in working memory capacity (WMC) reflect differences in attention (Baddeley, 1993; Engle, Kane, & Tuholski, 1999), differences in WMC should predict performance on visual attention tasks. Individuals who scored in the upper and lower quartiles on the OSPAN working memory test performed a modification of Egly and Homa's (1984) selective attention task. In this task, the participants identified a central letter and localized a displaced letter flashed somewhere on one of three concentric rings. When the displaced letter occurred closer to fixation than the cue implied, high-WMC, but not low-WMC, individuals showed a cost in the letter localization task. This suggests that low-WMC participants allocated attention as a spotlight, whereas those with high WMC showed flexible allocation.

NAFFS: network attached flash file system for cloud storage on portable consumer electronics

NASA Astrophysics Data System (ADS)

Han, Lin; Huang, Hao; Xie, Changsheng

Cloud storage technology has become a research hotspot in recent years, while the existing cloud storage services are mainly designed for data storage needs with stable high speed Internet connection. Mobile Internet connections are often unstable and the speed is relatively low. These native features of mobile Internet limit the use of cloud storage in portable consumer electronics. The Network Attached Flash File System (NAFFS) presented the idea of taking the portable device built-in NAND flash memory as the front-end cache of virtualized cloud storage device. Modern portable devices with Internet connection have built-in more than 1GB NAND Flash, which is quite enough for daily data storage. The data transfer rate of NAND flash device is much higher than mobile Internet connections[1], and its non-volatile feature makes it very suitable as the cache device of Internet cloud storage on portable device, which often have unstable power supply and intermittent Internet connection. In the present work, NAFFS is evaluated with several benchmarks, and its performance is compared with traditional network attached file systems, such as NFS. Our evaluation results indicate that the NAFFS achieves an average accessing speed of 3.38MB/s, which is about 3 times faster than directly accessing cloud storage by mobile Internet connection， and offers a more stable interface than that of directly using cloud storage API. Unstable Internet connection and sudden power off condition are tolerable, and no data in cache will be lost in such situation.

A large-scale cryoelectronic system for biological sample banking

NASA Astrophysics Data System (ADS)

Shirley, Stephen G.; Durst, Christopher H. P.; Fuchs, Christian C.; Zimmermann, Heiko; Ihmig, Frank R.

2009-11-01

We describe a polymorphic electronic infrastructure for managing biological samples stored over liquid nitrogen. As part of this system we have developed new cryocontainers and carrier plates attached to Flash memory chips to have a redundant and portable set of data at each sample. Our experimental investigations show that basic Flash operation and endurance is adequate for the application down to liquid nitrogen temperatures. This identification technology can provide the best sample identification, documentation and tracking that brings added value to each sample. The first application of the system is in a worldwide collaborative research towards the production of an AIDS vaccine. The functionality and versatility of the system can lead to an essential optimization of sample and data exchange for global clinical studies.

Some properties of negative cloud-to-ground flashes from observations of a local thunderstorm based on accurate-stroke-count studies

NASA Astrophysics Data System (ADS)

Zhu, Baoyou; Ma, Ming; Xu, Weiwei; Ma, Dong

2015-12-01

Properties of negative cloud-to-ground (CG) lightning flashes, in terms of number of strokes per flash, inter-stroke intervals and the relative intensity of subsequent and first strokes, were presented by accurate-stroke-count studies based on all 1085 negative flashes from a local thunderstorm. The percentage of single-stroke flashes and stroke multiplicity evolved significantly during the whole life cycle of the study thunderstorm. The occurrence probability of negative CG flashes decreased exponentially with the increasing number of strokes per flash. About 30.5% of negative CG flashes contained only one stroke and number of strokes per flash averaged 3.3. In a subset of 753 negative multiple-stroke flashes, about 41.4% contained at least one subsequent stroke stronger than the corresponding first stroke. Subsequent strokes tended to decrease in strength with their orders and the ratio of subsequent to first stroke peaks presented a geometric mean value of 0.52. Interestingly, negative CG flashes of higher multiplicity tended to have stronger initial strokes. 2525 inter-stroke intervals showed a more or less log-normal distribution and gave a geometric mean value of 62 ms. For CG flashes of particular multiplicity geometric mean inter-stroke intervals tended to decrease with the increasing number of strokes per flash, while those intervals associated with higher order strokes tended to be larger than those associated with low order strokes.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

New stimulation pattern design to improve P300-based matrix speller performance at high flash rate

NASA Astrophysics Data System (ADS)

Polprasert, Chantri; Kukieattikool, Pratana; Demeechai, Tanee; Ritcey, James A.; Siwamogsatham, Siwaruk

2013-06-01

Objective. We propose a new stimulation pattern design for the P300-based matrix speller aimed at increasing the minimum target-to-target interval (TTI). Approach. Inspired by the simplicity and strong performance of the conventional row-column (RC) stimulation, the proposed stimulation is obtained by modifying the RC stimulation through alternating row and column flashes which are selected based on the proposed design rules. The second flash of the double-flash components is then delayed for a number of flashing instants to increase the minimum TTI. The trade-off inherited in this approach is the reduced randomness within the stimulation pattern. Main results. We test the proposed stimulation pattern and compare its performance in terms of selection accuracy, raw and practical bit rates with the conventional RC flashing paradigm over several flash rates. By increasing the minimum TTI within the stimulation sequence, the proposed stimulation has more event-related potentials that can be identified compared to that of the conventional RC stimulations, as the flash rate increases. This leads to significant performance improvement in terms of the letter selection accuracy, the raw and practical bit rates over the conventional RC stimulation. Significance. These studies demonstrate that significant performance improvement over the RC stimulation is obtained without additional testing or training samples to compensate for low P300 amplitude at high flash rate. We show that our proposed stimulation is more robust to reduced signal strength due to the increased flash rate than the RC stimulation.

High performance data transfer

NASA Astrophysics Data System (ADS)

Cottrell, R.; Fang, C.; Hanushevsky, A.; Kreuger, W.; Yang, W.

2017-10-01

The exponentially increasing need for high speed data transfer is driven by big data, and cloud computing together with the needs of data intensive science, High Performance Computing (HPC), defense, the oil and gas industry etc. We report on the Zettar ZX software. This has been developed since 2013 to meet these growing needs by providing high performance data transfer and encryption in a scalable, balanced, easy to deploy and use way while minimizing power and space utilization. In collaboration with several commercial vendors, Proofs of Concept (PoC) consisting of clusters have been put together using off-the- shelf components to test the ZX scalability and ability to balance services using multiple cores, and links. The PoCs are based on SSD flash storage that is managed by a parallel file system. Each cluster occupies 4 rack units. Using the PoCs, between clusters we have achieved almost 200Gbps memory to memory over two 100Gbps links, and 70Gbps parallel file to parallel file with encryption over a 5000 mile 100Gbps link.

Radiation effects in reconfigurable FPGAs

NASA Astrophysics Data System (ADS)

Quinn, Heather

2017-04-01

Field-programmable gate arrays (FPGAs) are co-processing hardware used in image and signal processing. FPGA are programmed with custom implementations of an algorithm. These algorithms are highly parallel hardware designs that are faster than software implementations. This flexibility and speed has made FPGAs attractive for many space programs that need in situ, high-speed signal processing for data categorization and data compression. Most commercial FPGAs are affected by the space radiation environment, though. Problems with TID has restricted the use of flash-based FPGAs. Static random access memory based FPGAs must be mitigated to suppress errors from single-event upsets. This paper provides a review of radiation effects issues in reconfigurable FPGAs and discusses methods for mitigating these problems. With careful design it is possible to use these components effectively and resiliently.

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

NASA Technical Reports Server (NTRS)

John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

2011-01-01

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

Detection and analysis of radio frequency lightning emissions

NASA Technical Reports Server (NTRS)

Jalali, F.

1982-01-01

The feasibility study of detection of lightning discharges from a geosynchronous satellite requires adequate ground-based information regarding emission characteristics. In this investigation, a measurement system for collection of S-band emission data is set up and calibrated, and the operations procedures for rapid data collection during a storm activity developed. The system collects emission data in two modes; a digitized, high-resolution, short duration record stored in solid-state memory, and a continuous long-duration record on magnetic tape. Representative lightning flash data are shown. Preliminary results indicate appreciable RF emissions at 2 gHz from both the leader and return strokes portions of the cloud-to-ground discharge with strong peaks associated with the return strokes.

Wearable Wireless Sensor for Multi-Scale Physiological Monitoring

DTIC Science & Technology

2013-10-01

AD_________________ Award Number: W81XWH-12-1-0541 TITLE: Wearable Wireless Sensor for Multi-Scale...TYPE Annual 3. DATES COVERED 25 12- 13 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Wearable Wireless Sensor for Multi-Scale Physiological...peripheral management • Procedures for low power mode activation and wake - up • Routines for start- up state detection • Flash memory management

A Public + Private Mashup for Computer Science Education

ERIC Educational Resources Information Center

Wang, Kevin

2013-01-01

Getting called into the boss's office isn't always fun. Memories of trips to the school principal's office flash through one's mind. But the day last year that the author was called in to meet with their division vice president turned out to be a very good day. Executives at his company, Microsoft, had noticed the program he created in his spare…

Experimental Study of Floating-Gate-Type Metal-Oxide-Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku

2012-06-01

The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.

ReHypar: A Recursive Hybrid Chunk Partitioning Method Using NAND-Flash Memory SSD

PubMed Central

Park, Sung-Soon; Lim, Cheol-Su

2014-01-01

Due to the rapid development of flash memory, SSD is considered to be the replacement of HDD in the storage market. Although SSD retains several promising characteristics, such as high random I/O performance and nonvolatility, its high expense per capacity is the main obstacle in replacing HDD in all storage solutions. An alternative is to provide a hybrid structure where a small portion of SSD address space is combined with the much larger HDD address space. In such a structure, maximizing the space utilization of SSD in a cost-effective way is extremely important to generate high I/O performance. We developed ReHypar (recursive hybrid chunk partitioning) that enables improving the space utilization of SSD in the hybrid structure. The first objective of ReHypar is to mitigate the fragmentation overhead of SSD address space, by reusing the remaining free space of I/O units as much as possible. Furthermore, ReHypar allows defining several, logical data sections in SSD address space, with each of those sections being configured with the different I/O unit. We integrated ReHypar with ext2 and ext4 and evaluated it using two public benchmarks including IOzone and Postmark. PMID:24987741

Adaptive P300 based control system

PubMed Central

Jin, Jing; Allison, Brendan Z.; Sellers, Eric W.; Brunner, Clemens; Horki, Petar; Wang, Xingyu; Neuper, Christa

2015-01-01

An adaptive P300 brain-computer interface (BCI) using a 12 × 7 matrix explored new paradigms to improve bit rate and accuracy. During online use, the system adaptively selects the number of flashes to average. Five different flash patterns were tested. The 19-flash paradigm represents the typical row/column presentation (i.e., 12 columns and 7 rows). The 9- and 14-flash A & B paradigms present all items of the 12 × 7 matrix three times using either nine or 14 flashes (instead of 19), decreasing the amount of time to present stimuli. Compared to 9-flash A, 9-flash B decreased the likelihood that neighboring items would flash when the target was not flashing, thereby reducing interference from items adjacent to targets. 14-flash A also reduced adjacent item interference and 14-flash B additionally eliminated successive (double) flashes of the same item. Results showed that accuracy and bit rate of the adaptive system were higher than the non-adaptive system. In addition, 9- and 14-flash B produced significantly higher performance than their respective A conditions. The results also show the trend that the 14-flash B paradigm was better than the 19-flash pattern for naïve users. PMID:21474877

FLASH LIDAR Based Relative Navigation

NASA Technical Reports Server (NTRS)

Brazzel, Jack; Clark, Fred; Milenkovic, Zoran

2014-01-01

Relative navigation remains the most challenging part of spacecraft rendezvous and docking. In recent years, flash LIDARs, have been increasingly selected as the go-to sensors for proximity operations and docking. Flash LIDARS are generally lighter and require less power that scanning Lidars. Flash LIDARs do not have moving parts, and they are capable of tracking multiple targets as well as generating a 3D map of a given target. However, there are some significant drawbacks of Flash Lidars that must be resolved if their use is to be of long-term significance. Overcoming the challenges of Flash LIDARs for navigation-namely, low technology readiness level, lack of historical performance data, target identification, existence of false positives, and performance of vision processing algorithms as intermediaries between the raw sensor data and the Kalman filter-requires a world-class testing facility, such as the Lockheed Martin Space Operations Simulation Center (SOSC). Ground-based testing is a critical step for maturing the next-generation flash LIDAR-based spacecraft relative navigation. This paper will focus on the tests of an integrated relative navigation system conducted at the SOSC in January 2014. The intent of the tests was to characterize and then improve the performance of relative navigation, while addressing many of the flash LIDAR challenges mentioned above. A section on navigation performance and future recommendation completes the discussion.

Light flash phenomena induced by HzE particles

NASA Technical Reports Server (NTRS)

Mcnulty, P. J.; Pease, V. P.

1980-01-01

Astronauts and Apollo and Skylab missions have reported observing a variety of visual phenomena when their eyes are closed and adapted to darkness. These phenomena have been collectively labelled as light flashes. Visual phenomena which are similar in appearance to those observed in space have been demonstrated at the number of accelerator facilities by expressing the eyes of human subjects to beams of various types of radiation. In some laboratory experiments Cerenkov radiation was found to be the basis for the flashes observed while in other experiments Cerenkov radiation could apparently be ruled out. Experiments that differentiate between Cerenkov radiation and other possible mechanisms for inducing visual phenomena was then compared. The phenomena obtained in the presence and absence of Cerenkov radiation were designed and conducted. A new mechanism proposed to explain the visual phenomena observed by Skylab astronauts as they passed through the South Atlantic Anomaly, namely nuclear interactions in and near the sensitive layer of the retina, is covered. Also some studies to search for similar transient effects of space radiation on sensors and microcomputer memories are described.

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

NASA Astrophysics Data System (ADS)

Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

2011-03-01

Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

Materials and other needs for advanced phase change memory (Presentation Recording)

NASA Astrophysics Data System (ADS)

Sosa, Norma E.

2015-09-01

Phase change memory (PCM), with its long history, may now hold its brightest promise to date. This bright future is being fueled by the "push" from big data. PCM is a non-volatile memory technology used to create solid-state random access memory devices that operate based the resistance properties of materials. Employing the electrical resistance differences-as opposed to differences in charge stored-between the amorphous and crystalline phases of the material, PCM can store bits, namely one's and zero's. Indeed, owing to the method of storage, PCM can in fact be designed to hold multiple bits thus leading to a high-density technology twice the storage density and less than half the cost of DRAM, the main kind found in typical personal computers. It has been long known that PCM can fill a need gap that spans 3 decades in performance from DRAM to solid state drive (NAND Flash). Furthermore, PCM devices can lead to performance and reliability improvements essential to enabling significant steps forward to supporting big data centric computing. This talk will focus on the science and challenges of aggressive scaling to realize the density needed, how this scaling challenge is intertwined with materials needs for endurance into the giga-cycles, and the associated forefront research aiming to realizing multi-level functionality into these nanoscale programmable resistor devices.

Bipolar cloud-to-ground lightning flash observations

NASA Astrophysics Data System (ADS)

Saba, Marcelo M. F.; Schumann, Carina; Warner, Tom A.; Helsdon, John H.; Schulz, Wolfgang; Orville, Richard E.

2013-10-01

lightning is usually defined as a lightning flash where the current waveform exhibits a polarity reversal. There are very few reported cases of cloud-to-ground (CG) bipolar flashes using only one channel in the literature. Reports on this type of bipolar flashes are not common due to the fact that in order to confirm that currents of both polarities follow the same channel to the ground, one necessarily needs video records. This study presents five clear observations of single-channel bipolar CG flashes. High-speed video and electric field measurement observations are used and analyzed. Based on the video images obtained and based on previous observations of positive CG flashes with high-speed cameras, we suggest that positive leader branches which do not participate in the initial return stroke of a positive cloud-to-ground flash later generate recoil leaders whose negative ends, upon reaching the branch point, traverse the return stroke channel path to the ground resulting in a subsequent return stroke of opposite polarity.

The Application of Flash in Web-Based Multimedia Courseware Development

ERIC Educational Resources Information Center

Chen, Jun; Wang, Zu-Yuan; Wu, Yuren

2009-01-01

Purpose: The purpose of this paper is to introduce some new functions achieved in a web-based multimedia courseware, which is developed by Flash software and used by part-time graduate students. Design/methodology/approach: The courseware uses Adobe Flash CS3 as its development software, which supports Actionscript language, FMS and FLV technology…

76 FR 2681 - Amended Environmental Impact Statement Filing System Guidance for Implementing 40 CFR 1506.9 and...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-14

...., compact discs (CDs), USB flash drives, or memory cards. Please note that if a Federal agency prepares an... of the NOA in the Federal Register. If a calculated time period would end on a non- working day, the assigned time period will be the next working day (i.e., time periods will not end on weekends or Federal...

Highly Asynchronous VisitOr Queue Graph Toolkit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pearce, R.

2012-10-01

HAVOQGT is a C++ framework that can be used to create highly parallel graph traversal algorithms. The framework stores the graph and algorithmic data structures on external memory that is typically mapped to high performance locally attached NAND FLASH arrays. The framework supports a vertex-centered visitor programming model. The frameworkd has been used to implement breadth first search, connected components, and single source shortest path.

Research and Development of Collaborative Environments for Command and Control

DTIC Science & Technology

2011-05-01

at any state of building. The viewer tool presents the designed model with 360-degree perspective views even after regeneration of the design, which...and it shows the following prompt. GUM > APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED...11 First initialize the microSD card by typing GUM > mmcinit Then erase the old Linux kernel and the root file system on the flash memory

Flash Floods Simulation using a Physical-Based Hydrological Model at Different Hydroclimatic Regions

NASA Astrophysics Data System (ADS)

Saber, Mohamed; Kamil Yilmaz, Koray

2016-04-01

Currently, flash floods are seriously increasing and affecting many regions over the world. Therefore, this study will focus on two case studies; Wadi Abu Subeira, Egypt as arid environment, and Karpuz basin, Turkey as Mediterranean environment. The main objective of this work is to simulate flash floods at both catchments considering the hydrometeorological differences between them which in turn effect their flash flood behaviors. An integrated methodology incorporating Hydrological River Basin Environmental Assessment Model (Hydro-BEAM) and remote sensing observations was devised. Global Satellite Mapping of Precipitation (GSMAP) were compared with the rain gauge network at the target basins to estimate the bias in an effort to further use it effectively in simulation of flash floods. Based on the preliminary results of flash floods simulation on both basins, we found that runoff behaviors of flash floods are different due to the impacts of climatology, hydrological and topographical conditions. Also, the simulated surface runoff hydrographs are reasonably coincide with the simulated ones. Consequently, some mitigation strategies relying on this study could be introduced to help in reducing the flash floods disasters at different climate regions. This comparison of different climatic basins would be a reasonable implication for the potential impact of climate change on the flash floods frequencies and occurrences.

FLASH Interface; a GUI for managing runtime parameters in FLASH simulations

NASA Astrophysics Data System (ADS)

Walker, Christopher; Tzeferacos, Petros; Weide, Klaus; Lamb, Donald; Flocke, Norbert; Feister, Scott

2017-10-01

We present FLASH Interface, a novel graphical user interface (GUI) for managing runtime parameters in simulations performed with the FLASH code. FLASH Interface supports full text search of available parameters; provides descriptions of each parameter's role and function; allows for the filtering of parameters based on categories; performs input validation; and maintains all comments and non-parameter information already present in existing parameter files. The GUI can be used to edit existing parameter files or generate new ones. FLASH Interface is open source and was implemented with the Electron framework, making it available on Mac OSX, Windows, and Linux operating systems. The new interface lowers the entry barrier for new FLASH users and provides an easy-to-use tool for experienced FLASH simulators. U.S. Department of Energy (DOE), NNSA ASC/Alliances Center for Astrophysical Thermonuclear Flashes, U.S. DOE NNSA ASC through the Argonne Institute for Computing in Science, U.S. National Science Foundation.

OTD Observations of Continental US Ground and Cloud Flashes

NASA Technical Reports Server (NTRS)

Koshak, William

2007-01-01

Lightning optical flash parameters (e.g., radiance, area, duration, number of optical groups, and number of optical events) derived from almost five years of Optical Transient Detector (OTD) data are analyzed. Hundreds of thousands of OTD flashes occurring over the continental US are categorized according to flash type (ground or cloud flash) using US National Lightning Detection Network TM (NLDN) data. The statistics of the optical characteristics of the ground and cloud flashes are inter-compared on an overall basis, and as a function of ground flash polarity. A standard two-distribution hypothesis test is used to inter-compare the population means of a given lightning parameter for the two flash types. Given the differences in the statistics of the optical characteristics, it is suggested that statistical analyses (e.g., Bayesian Inference) of the space-based optical measurements might make it possible to successfully discriminate ground and cloud flashes a reasonable percentage of the time.

Harvesting Entropy for Random Number Generation for Internet of Things Constrained Devices Using On-Board Sensors

PubMed Central

Pawlowski, Marcin Piotr; Jara, Antonio; Ogorzalek, Maciej

2015-01-01

Entropy in computer security is associated with the unpredictability of a source of randomness. The random source with high entropy tends to achieve a uniform distribution of random values. Random number generators are one of the most important building blocks of cryptosystems. In constrained devices of the Internet of Things ecosystem, high entropy random number generators are hard to achieve due to hardware limitations. For the purpose of the random number generation in constrained devices, this work proposes a solution based on the least-significant bits concatenation entropy harvesting method. As a potential source of entropy, on-board integrated sensors (i.e., temperature, humidity and two different light sensors) have been analyzed. Additionally, the costs (i.e., time and memory consumption) of the presented approach have been measured. The results obtained from the proposed method with statistical fine tuning achieved a Shannon entropy of around 7.9 bits per byte of data for temperature and humidity sensors. The results showed that sensor-based random number generators are a valuable source of entropy with very small RAM and Flash memory requirements for constrained devices of the Internet of Things. PMID:26506357

Harvesting entropy for random number generation for internet of things constrained devices using on-board sensors.

PubMed

Pawlowski, Marcin Piotr; Jara, Antonio; Ogorzalek, Maciej

2015-10-22

Entropy in computer security is associated with the unpredictability of a source of randomness. The random source with high entropy tends to achieve a uniform distribution of random values. Random number generators are one of the most important building blocks of cryptosystems. In constrained devices of the Internet of Things ecosystem, high entropy random number generators are hard to achieve due to hardware limitations. For the purpose of the random number generation in constrained devices, this work proposes a solution based on the least-significant bits concatenation entropy harvesting method. As a potential source of entropy, on-board integrated sensors (i.e., temperature, humidity and two different light sensors) have been analyzed. Additionally, the costs (i.e., time and memory consumption) of the presented approach have been measured. The results obtained from the proposed method with statistical fine tuning achieved a Shannon entropy of around 7.9 bits per byte of data for temperature and humidity sensors. The results showed that sensor-based random number generators are a valuable source of entropy with very small RAM and Flash memory requirements for constrained devices of the Internet of Things.

Model-assisted template extraction SRAF application to contact holes patterns in high-end flash memory device fabrication

NASA Astrophysics Data System (ADS)

Seoud, Ahmed; Kim, Juhwan; Ma, Yuansheng; Jayaram, Srividya; Hong, Le; Chae, Gyu-Yeol; Lee, Jeong-Woo; Park, Dae-Jin; Yune, Hyoung-Soon; Oh, Se-Young; Park, Chan-Ha

2018-03-01

Sub-resolution assist feature (SRAF) insertion techniques have been effectively used for a long time now to increase process latitude in the lithography patterning process. Rule-based SRAF and model-based SRAF are complementary solutions, and each has its own benefits, depending on the objectives of applications and the criticality of the impact on manufacturing yield, efficiency, and productivity. Rule-based SRAF provides superior geometric output consistency and faster runtime performance, but the associated recipe development time can be of concern. Model-based SRAF provides better coverage for more complicated pattern structures in terms of shapes and sizes, with considerably less time required for recipe development, although consistency and performance may be impacted. In this paper, we introduce a new model-assisted template extraction (MATE) SRAF solution, which employs decision tree learning in a model-based solution to provide the benefits of both rule-based and model-based SRAF insertion approaches. The MATE solution is designed to automate the creation of rules/templates for SRAF insertion, and is based on the SRAF placement predicted by model-based solutions. The MATE SRAF recipe provides optimum lithographic quality in relation to various manufacturing aspects in a very short time, compared to traditional methods of rule optimization. Experiments were done using memory device pattern layouts to compare the MATE solution to existing model-based SRAF and pixelated SRAF approaches, based on lithographic process window quality, runtime performance, and geometric output consistency.

Characteristic pulse trains of preliminary breakdown in four isolated small thunderstorms

NASA Astrophysics Data System (ADS)

Ma, Dong

2017-03-01

Using a low-frequency six-station local network, preliminary breakdown (PB) pulses not followed or followed by negative return stroke (RS), which are defined as PB-type and PB cloud-to-ground (PBCG)-type flashes, are analyzed based on four isolated small thunderstorms for the first time. On the basis of 22 PB-type flashes out of totally 2155 flashes, it indicates that the number of PB-type flashes is very small. At the early stage, PB-type flashes are observed in all four thunderstorms. At the active stage, PB-type flashes still can occur; meanwhile, there are few or no negative cloud-to-ground (CG) flashes. However, at the final stage no PB-type flashes occur. At the stage of distinct cell merging or splitting, PB-type flashes are also observed. Based on the 123 PBCG-type flashes, we discuss the percentage of PBCG-type flashes and also analyze the relationship between the electric field (E-field) amplitude of the largest pulse in the PB pulse train normalized to 100 km (PBA), the E-field amplitude of the first return stroke normalized to 100 km (RSA), the time interval between PBA and RSA (PB-RS interval), and the ratio between PBA and RSA (PB-RS ratio). We find that the percentage of PBCG-type flashes is not always dependent on PBA or PB-RS ratio; the type of thunderstorms may also have an impact on this percentage. None of the PB-RS intervals is less than 20 ms; we speculate that such long PB-RS interval is the feature of isolated small thunderstorms, but more observations are needed to further investigate this question.

Brackets, epitopes and flash memory cards: a futuristic view of clinical orthodontics.

PubMed

Sims, Milton R

2017-02-01

Orthodontics continues to be a profession anchored in traditional technology using appliances that cause inflammatory periodontal ligament (PDL) responses. Existing concepts of biological tooth movement based largely on histological tissue observations and the application of physical principles require major reassessment. In the next millennium, the genome revolution and knowledge of protein production and control could lead to the genetic correction of dentofacial anomalies and pain-free, biomolecular methods of malocclusion correction and long-term stability. A fundamental change is likely to be the abolition of bracket systems and their replacement with preprogrammed microchips driven by computers, and the control of PD[ blood vessels and cells by pharmacological targeting. Future survival of the profession will depend on a radically different specialist who will be educated with a postgraduate curriculum based on molecular biology and computer engineering.

Gun muzzle flash detection using a CMOS single photon avalanche diode

NASA Astrophysics Data System (ADS)

Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

2013-10-01

Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

Global Patterns of Lightning Properties Derived by OTD and LIS

NASA Technical Reports Server (NTRS)

Beirle, Steffen; Koshak, W.; Blakeslee, R.; Wagner, T.

2014-01-01

The satellite instruments Optical Transient Detector (OTD) and Lightning Imaging Sensor (LIS) provide unique empirical data about the frequency of lightning flashes around the globe (OTD), and the tropics (LIS), which 5 has been used before to compile a well received global climatology of flash rate densities. Here we present a statistical analysis of various additional lightning properties derived from OTD/LIS, i.e. the number of so-called "events" and "groups" per flash, as well as 10 the mean flash duration, footprint and radiance. These normalized quantities, which can be associated with the flash "strength", show consistent spatial patterns; most strikingly, oceanic flashes show higher values than continental flashes for all properties. Over land, regions with high (Eastern US) 15 and low (India) flash strength can be clearly identified. We discuss possible causes and implications of the observed regional differences. Although a direct quantitative interpretation of the investigated flash properties is difficult, the observed spatial patterns provide valuable information for the 20 interpretation and application of climatological flash rates. Due to the systematic regional variations of physical flash characteristics, viewing conditions, and/or measurement sensitivities, parametrisations of lightning NOx based on total flash rate densities alone are probably affected by regional biases.

The properties of optical lightning flashes and the clouds they illuminate

NASA Astrophysics Data System (ADS)

Peterson, Michael; Deierling, Wiebke; Liu, Chuntao; Mach, Douglas; Kalb, Christina

2017-01-01

Optical lightning sensors like the Optical Transient Detector and Lightning Imaging Sensor (LIS) measure total lightning across large swaths of the globe with high detection efficiency. With two upcoming missions that employ these sensors - LIS on the International Space Station and the Geostationary Lightning Mapper on the GOES-R satellite - there has been increased interest in what these measurements can reveal about lightning and thunderstorms in addition to total flash activity. Optical lightning imagers are capable of observing the characteristics of individual flashes that include their sizes, durations, and radiative energies. However, it is important to exercise caution when interpreting trends in optical flash measurements because they can be affected by the scene. This study uses coincident measurements from the Tropical Rainfall Measuring Mission (TRMM) satellite to examine the properties of LIS flashes and the surrounding cloud regions they illuminate. These combined measurements are used to assess to what extent optical flash characteristics can be used to make inferences about flash structure and energetics. Clouds illuminated by lightning over land and ocean regions that are otherwise similar based on TRMM measurements are identified. Even when LIS flashes occur in similar clouds and background radiances, oceanic flashes are still shown to be larger, brighter, longer lasting, more prone to horizontal propagation, and to contain more groups than their land-based counterparts. This suggests that the optical trends noted in literature are not entirely the result of radiative transfer effects but rather stem from physical differences in the flashes.

An Evaluation of Lightning Flash Rate Parameterizations Based on Observations of Colorado Storms during DC3

NASA Astrophysics Data System (ADS)

Basarab, B.; Fuchs, B.; Rutledge, S. A.

2013-12-01

Predicting lightning activity in thunderstorms is important in order to accurately quantify the production of nitrogen oxides (NOx = NO + NO2) by lightning (LNOx). Lightning is an important global source of NOx, and since NOx is a chemical precursor to ozone, the climatological impacts of LNOx could be significant. Many cloud-resolving models rely on parameterizations to predict lightning and LNOx since the processes leading to charge separation and lightning discharge are not yet fully understood. This study evaluates predicted flash rates based on existing lightning parameterizations against flash rates observed for Colorado storms during the Deep Convective Clouds and Chemistry Experiment (DC3). Evaluating lightning parameterizations against storm observations is a useful way to possibly improve the prediction of flash rates and LNOx in models. Additionally, since convective storms that form in the eastern plains of Colorado can be different thermodynamically and electrically from storms in other regions, it is useful to test existing parameterizations against observations from these storms. We present an analysis of the dynamics, microphysics, and lightning characteristics of two case studies, severe storms that developed on 6 and 7 June 2012. This analysis includes dual-Doppler derived horizontal and vertical velocities, a hydrometeor identification based on polarimetric radar variables using the CSU-CHILL radar, and insight into the charge structure using observations from the northern Colorado Lightning Mapping Array (LMA). Flash rates were inferred from the LMA data using a flash counting algorithm. We have calculated various microphysical and dynamical parameters for these storms that have been used in empirical flash rate parameterizations. In particular, maximum vertical velocity has been used to predict flash rates in some cloud-resolving chemistry simulations. We diagnose flash rates for the 6 and 7 June storms using this parameterization and compare to observed flash rates. For the 6 June storm, a preliminary analysis of aircraft observations of storm inflow and outflow is presented in order to place flash rates (and other lightning statistics) in the context of storm chemistry. An approach to a possibly improved LNOx parameterization scheme using different lightning metrics such as flash area will be discussed.

Fusion Helmet: Electronic Analysis

DTIC Science & Technology

2014-04-01

Table 1: LYR203-101B Board Feature P1 (SEC MODULE) DM648 GPIO PORn Video Ports (2) Bootmode SPI/UART I2C CLKIN MDIO DDR2 128MB/16bit SPI Flash 16...McASP EMAC-SGMII /2 MDIO I2C GPIO DDR2 128MB/16bit JTAG Memory CLKGEN I2C PGoodPGood PORn Pwr LED Power DSP SPI/UART DSP SPI/UARTSPI/UART Video Display

Pigeons' Memory for Number of Events: Effects of Intertrial Interval and Delay Interval Illumination

ERIC Educational Resources Information Center

Hope, Chris; Santi, Angelo

2004-01-01

In Experiment 1, pigeons were trained at a 0-s baseline delay to discriminate sequences of light flashes (illumination of the feeder) that varied in number but not time (2f/4s and 8f/4s). During training, the intertrial interval was illuminated by the houselight for Group Light, but it was dark for Group Dark. Testing conducted with dark delay…

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

NASA Astrophysics Data System (ADS)

Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang

2017-06-01

Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb7Te3/Ge multilayer films by using a magnetron sputtering method. The 10 years’ data retention temperature is significantly increased compared with pure Sb7Te3. When the annealing temperature is above 250 °C, the Sb7Te3/Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

KSC-05PD-0565

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, a digital still camera has been mounted in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0562

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers check the digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the tank's separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0564

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, a worker mounts a digital still camera in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0561

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers prepare a digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following its separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0563

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers prepare a digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Reconfigurable Fault Tolerance for FPGAs

NASA Technical Reports Server (NTRS)

Shuler, Robert, Jr.

2010-01-01

The invention allows a field-programmable gate array (FPGA) or similar device to be efficiently reconfigured in whole or in part to provide higher capacity, non-redundant operation. The redundant device consists of functional units such as adders or multipliers, configuration memory for the functional units, a programmable routing method, configuration memory for the routing method, and various other features such as block RAM, I/O (random access memory, input/output) capability, dedicated carry logic, etc. The redundant device has three identical sets of functional units and routing resources and majority voters that correct errors. The configuration memory may or may not be redundant, depending on need. For example, SRAM-based FPGAs will need some type of radiation-tolerant configuration memory, or they will need triple-redundant configuration memory. Flash or anti-fuse devices will generally not need redundant configuration memory. Some means of loading and verifying the configuration memory is also required. These are all components of the pre-existing redundant FPGA. This innovation modifies the voter to accept a MODE input, which specifies whether ordinary voting is to occur, or if redundancy is to be split. Generally, additional routing resources will also be required to pass data between sections of the device created by splitting the redundancy. In redundancy mode, the voters produce an output corresponding to the two inputs that agree, in the usual fashion. In the split mode, the voters select just one input and convey this to the output, ignoring the other inputs. In a dual-redundant system (as opposed to triple-redundant), instead of a voter, there is some means to latch or gate a state update only when both inputs agree. In this case, the invention would require modification of the latch or gate so that it would operate normally in redundant mode, and would separately latch or gate the inputs in non-redundant mode.

Toward seamless high-resolution flash flood forecasting over Europe based on radar nowcasting and NWP: An evaluation with case studies

NASA Astrophysics Data System (ADS)

Park, Shinju; Berenguer, Marc; Sempere-Torres, Daniel; Baugh, Calum; Smith, Paul

2017-04-01

Flash floods induced by heavy rain are one of the hazardous natural events that significantly affect human lives. Because flash floods are characterized by their rapid onset, forecasting flash flood to lead an effective response requires accurate rainfall predictions with high spatial and temporal resolution and adequate representation of the hydrologic and hydraulic processes within a catchment that determine rainfall-runoff accumulations. We present extreme flash flood cases which occurred throughout Europe in 2015-2016 that were identified and forecasted by two real-time approaches: 1) the European Rainfall-Induced Hazard Assessment System (ERICHA) and 2) the European Runoff Index based on Climatology (ERIC). ERICHA is based on the nowcasts of accumulated precipitation generated from the pan-European radar composites produced by the EUMETNET project OPERA. It has the advantage of high-resolution precipitation inputs and rapidly updated forecasts (every 15 minutes), but limited forecast lead time (up to 8 hours). ERIC, on the other hand, provides 5-day forecasts based on the COSMO-LEPS NWP simulations updated 2 times a day but is only produced at a 7 km resolution. We compare the products from both systems and focus on showing the advantages, limitations and complementarities of ERICHA and ERIC for seamless high-resolution flash flood forecasting.

Development of a precipitation-area curve for warning criteria of short-duration flash flood

NASA Astrophysics Data System (ADS)

Bae, Deg-Hyo; Lee, Moon-Hwan; Moon, Sung-Keun

2018-01-01

This paper presents quantitative criteria for flash flood warning that can be used to rapidly assess flash flood occurrence based on only rainfall estimates. This study was conducted for 200 small mountainous sub-catchments of the Han River basin in South Korea because South Korea has recently suffered many flash flood events. The quantitative criteria are calculated based on flash flood guidance (FFG), which is defined as the depth of rainfall of a given duration required to cause frequent flooding (1-2-year return period) at the outlet of a small stream basin and is estimated using threshold runoff (TR) and antecedent soil moisture conditions in all sub-basins. The soil moisture conditions were estimated during the flooding season, i.e., July, August and September, over 7 years (2002-2009) using the Sejong University Rainfall Runoff (SURR) model. A ROC (receiver operating characteristic) analysis was used to obtain optimum rainfall values and a generalized precipitation-area (P-A) curve was developed for flash flood warning thresholds. The threshold function was derived as a P-A curve because the precipitation threshold with a short duration is more closely related to basin area than any other variables. For a brief description of the P-A curve, generalized thresholds for flash flood warnings can be suggested for rainfall rates of 42, 32 and 20 mm h-1 in sub-basins with areas of 22-40, 40-100 and > 100 km2, respectively. The proposed P-A curve was validated based on observed flash flood events in different sub-basins. Flash flood occurrences were captured for 9 out of 12 events. This result can be used instead of FFG to identify brief flash flood (less than 1 h), and it can provide warning information to decision-makers or citizens that is relatively simple, clear and immediate.

Solar collector cell and roof flashing assembly and method of constructing a roof with such an assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mayerovitch, M.D.

1980-03-25

A solar collector cell formed as an integral portion of a roof flashing is disclosed as comprising a flashing base having a dihedral surface including a larger base portion and a smaller ramp portion, and a solar collector cell container built integrally with the base portion of the flashing. The combination is designed to be installed in the roof of a dwelling or other building structure. The container portion of the flashing is substantially shorter in height above the roof line than conventional solar collector cell structures added to a roof subsequent to its construction. As a result, the inventionmore » gives the building constructor or owner, the option of either including the solar cell components at the time of construction of the roof to provide a solar heating device, or to fill the solar collector cell container with a temporary support structure, such as roof shakes or tiles. The shape of the solar collector cell and flashing assembly permits the solar collector cell structure to be camouflaged by overlying shakes or tiles of which the roof is constructed.« less

A Semi-Preemptive Garbage Collector for Solid State Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Junghee; Kim, Youngjae; Shipman, Galen M

2011-01-01

NAND flash memory is a preferred storage media for various platforms ranging from embedded systems to enterprise-scale systems. Flash devices do not have any mechanical moving parts and provide low-latency access. They also require less power compared to rotating media. Unlike hard disks, flash devices use out-of-update operations and they require a garbage collection (GC) process to reclaim invalid pages to create free blocks. This GC process is a major cause of performance degradation when running concurrently with other I/O operations as internal bandwidth is consumed to reclaim these invalid pages. The invocation of the GC process is generally governedmore » by a low watermark on free blocks and other internal device metrics that different workloads meet at different intervals. This results in I/O performance that is highly dependent on workload characteristics. In this paper, we examine the GC process and propose a semi-preemptive GC scheme that can preempt on-going GC processing and service pending I/O requests in the queue. Moreover, we further enhance flash performance by pipelining internal GC operations and merge them with pending I/O requests whenever possible. Our experimental evaluation of this semi-preemptive GC sheme with realistic workloads demonstrate both improved performance and reduced performance variability. Write-dominant workloads show up to a 66.56% improvement in average response time with a 83.30% reduced variance in response time compared to the non-preemptive GC scheme.« less

Compact Low Power DPU for Plasma Instrument LINA on the Russian Luna-Glob Lander

NASA Astrophysics Data System (ADS)

Schmidt, Walter; Riihelä, Pekka; Kallio, Esa

2013-04-01

The Swedish Institute for Space Physics in Kiruna is bilding a Lunar Ions and Neutrals Analyzer (LINA) for the Russian Luna-Glob lander mission and its orbiter, to be launched around 2016 [1]. The Finnish Meteorological Institute is responsible for designing and building the central data processing units (DPU) for both instruments. The design details were optimized to serve as demonstrator also for a similar instrument on the Jupiter mission JUICE. To accommodate the originally set short development time and to keep the design between orbiter and Lander as similar as possible, the DPU is built around two re-programmable flash-based FPGAs from Actel. One FPGA contains a public-domain 32-bit processor core identical for both Lander and orbiter. The other FPGA handles all interfaces to the spacecraft system and the detectors, somewhat different for both implementations. Monitoring of analog housekeeping data is implemented as an IP-core from Stellamar inside the interface FPGA, saving mass, volume and especially power while simplifying the radiation protection design. As especially on the Lander the data retention before transfer to the orbiter cannot be guaranteed under all conditions, the DPU includes a Flash-PROM containing several software versions and data storage capability. With the memory management implemented inside the interface FPGA, one of the serial links can also be used as test port to verify the system, load the initial software into the Flash-PROM and to control the detector hardware directly without support by the processor and a ready developed operating system and software. Implementation and performance details will be presented. Reference: [1] http://www.russianspaceweb.com/luna_glob_lander.html.

Flexible Peripheral Component Interconnect Input/Output Card

NASA Technical Reports Server (NTRS)

Bigelow, Kirk K.; Jerry, Albert L.; Baricio, Alisha G.; Cummings, Jon K.

2010-01-01

The Flexible Peripheral Component Interconnect (PCI) Input/Output (I/O) Card is an innovative circuit board that provides functionality to interface between a variety of devices. It supports user-defined interrupts for interface synchronization, tracks system faults and failures, and includes checksum and parity evaluation of interface data. The card supports up to 16 channels of high-speed, half-duplex, low-voltage digital signaling (LVDS) serial data, and can interface combinations of serial and parallel devices. Placement of a processor within the field programmable gate array (FPGA) controls an embedded application with links to host memory over its PCI bus. The FPGA also provides protocol stacking and quick digital signal processor (DSP) functions to improve host performance. Hardware timers, counters, state machines, and other glue logic support interface communications. The Flexible PCI I/O Card provides an interface for a variety of dissimilar computer systems, featuring direct memory access functionality. The card has the following attributes: 8/16/32-bit, 33-MHz PCI r2.2 compliance, Configurable for universal 3.3V/5V interface slots, PCI interface based on PLX Technology's PCI9056 ASIC, General-use 512K 16 SDRAM memory, General-use 1M 16 Flash memory, FPGA with 3K to 56K logical cells with embedded 27K to 198K bits RAM, I/O interface: 32-channel LVDS differential transceivers configured in eight, 4-bit banks; signaling rates to 200 MHz per channel, Common SCSI-3, 68-pin interface connector.

High Risk Flash Flood Rainstorm Mapping Based on Regional L-moments Approach

NASA Astrophysics Data System (ADS)

Ding, Hui; Liao, Yifan; Lin, Bingzhang

2017-04-01

Difficulties and complexities in elaborating flash flood early-warning and forecasting system prompt hydrologists to develop some techniques to substantially reduce the disastrous outcome of a flash flood in advance. An ideal to specify those areas that are subject at high risk to flash flood in terms of rainfall intensity in a relatively large region is proposed in this paper. It is accomplished through design of the High Risk Flash Flood Rainstorm Area (HRFFRA) based on statistical analysis of historical rainfall data, synoptic analysis of prevailing storm rainfalls as well as the field survey of historical flash flood events in the region. A HRFFRA is defined as the area potentially under hitting by higher intense-precipitation for a given duration with certain return period that may cause a flash flood disaster in the area. This paper has presented in detail the development of the HRFFRA through the application of the end-to-end Regional L-moments Approach (RLMA) to precipitation frequency analysis in combination with the technique of spatial interpolation in Jiangxi Province, South China Mainland. Among others, the concept of hydrometeorologically homogenous region, the precision of frequency analysis in terms of parameter estimation, the accuracy of quantiles in terms of uncertainties and the consistency adjustments of quantiles over durations and space, etc., have been addressed. At the end of this paper, the mapping of the HRFFRA and an internet-based visualized user-friendly data-server of the HRFFRA are also introduced. Key words: HRFFRA; Flash Flood; RLMA; rainfall intensity; Hydrometeorological homogenous region.

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Characteristics of the most intense lightning storm ever recorded at the CN Tower

NASA Astrophysics Data System (ADS)

Hussein, A. M.; Kazazi, S.; Anwar, M.; Yusouf, M.; Liatos, P.

2017-02-01

Lightning strikes to the CN Tower have been optically observed since 1978. In 1990, five independent systems started to operate to simultaneously record parameters of lightning strikes to the tower, including the time derivative of the current, the associated electric and magnetic fields, and the channel optical characteristics. On August 24, 2011, during an unusually severe lightning storm, video records showed that the CN Tower was struck with 52 lightning flashes within 84 min and 6.9 s. Thus, this storm produced, on average, a flash to the tower every 99 s. However, the CN Tower lightning current derivative measurement system only recorded 32 flashes, which were perfectly time-matched with 32 of the 52 video-recorded flashes. It is found that the current derivative measurement system recorded every video-recorded flash that contained at least one return stroke. Based on the analysis of video records, it is noted that each of the storm's 52 flashes contains an initial-stage current, proving that all flashes were upward initiated. This unique CN Tower storm - the most intense ever recorded at the tower - is here thoroughly analyzed, based on video and current records. The inter-flash time within the storm is found to vary between 10.6 s and 274 s, with an overall average of 98 s. It is also found that the inter-flash time between successive non-return-stroke flashes is on average 64% longer than that for successive flashes containing return strokes. Statistical analysis of video and current data clearly reveals that the time duration of flashes containing initial-stage currents and return strokes is on average 27% longer than that of flashes that only have initial-stage currents. Furthermore, it is important to note that the time duration of the initial-stage current in flashes containing no return strokes is on average 76% longer than that in flashes containing return strokes. Therefore, it is possible to conclude that if the time duration of the initial-stage current in a flash is long enough, resulting in large charge transfer, then there is less probability of having return strokes following it. The 32 current-recorded flashes contain a total of 156 return strokes, with an average multiplicity of 4.875. It is worth mentioning that during one decade, 1992-2001, the CN Tower current derivative measurement system only recorded 478 return strokes, demonstrating that the number of return strokes recorded at the tower within about 84 min is close to one third of those recorded at the tower during one decade. This finding clearly shows the great value and rarity of the presented extensive lightning current derivative data. Only one of the 32 current-recorded flashes is proved to be positive with a single return stroke. Based on current records, out of a total of 124 inter-stroke time intervals, 94% are found to be within 200 ms, with an overall inter-stroke time average of 68.1 ms. The maximum inter-stroke time recorded during this storm is 726.3 ms, the longest ever recorded at the CN Tower.

The Evolution and Structure of Extreme Optical Lightning Flashes.

PubMed

Peterson, Michael; Rudlosky, Scott; Deierling, Wiebke

2017-12-27

This study documents the composition, morphology, and motion of extreme optical lightning flashes observed by the Lightning Imaging Sensor (LIS). The furthest separation of LIS events (groups) in any flash is 135 km (89 km), the flash with the largest footprint had an illuminated area of 10,604 km 2 , and the most dendritic flash has 234 visible branches. The longest-duration convective LIS flash lasted 28 s and is overgrouped and not physical. The longest-duration convective-to-stratiform propagating flash lasted 7.4 s, while the longest-duration entirely stratiform flash lasted 4.3 s. The longest series of nearly consecutive groups in time lasted 242 ms. The most radiant recorded LIS group (i.e., "superbolt") is 735 times more radiant than the average group. Factors that impact these optical measures of flash morphology and evolution are discussed. While it is apparent that LIS can record the horizontal development of the lightning channel in some cases, radiative transfer within the cloud limits the flash extent and level of detail measured from orbit. These analyses nonetheless suggest that lightning imagers such as LIS and Geostationary Lightning Mapper can complement ground-based lightning locating systems for studying physical lightning phenomena across large geospatial domains.

Foundry Technologies Focused on Environmental and Ecological Applications

NASA Astrophysics Data System (ADS)

Roizin, Ya.; Lisiansky, M.; Pikhay, E.

Solutions allowing fabrication of remote control systems with integrated sensors (motes) were introduced as a part of CMOS foundry production platform and verified on silicon. The integrated features include sensors employing principles previously verified in the development of ultra-low power consuming non-volatile memories (C-Flash, MRAM) and components allowing low-power energy harvesting (low voltage rectifiers, high -voltage solar cells). The developed systems are discussed with emphasis on their environmental and security applications.

Modular Electronics for Flash Memory Production

DTIC Science & Technology

2011-12-28

DEFENSE TECHNICAL INFORMATION CENTER ImuM ktkUmlimäj DTICfhas determined on oc öf^H AJI that this Technical Document has the Distribution...the second harmonic (8I2/8V2), and a normalization to remove the scale of the measured current. The red dashed lines represent notable vibrational...superimposed as red dashed lines. The agreement between the two spectroscopies is conclusive that we have successfully put our OPE derivative into the gap

Understanding the complex relationships underlying hot flashes: a Bayesian network approach.

PubMed

Smith, Rebecca L; Gallicchio, Lisa M; Flaws, Jodi A

2018-02-01

The mechanism underlying hot flashes is not well-understood, primarily because of complex relationships between and among hot flashes and their risk factors. We explored those relationships using a Bayesian network approach based on a 2006 to 2015 cohort study of hot flashes among 776 female residents, 45 to 54 years old, in the Baltimore area. Bayesian networks were fit for each outcome (current hot flashes, hot flashes before the end of the study, hot flash severity, hot flash frequency, and age at first hot flashes) separately and together with a list of risk factors (estrogen, progesterone, testosterone, body mass index and obesity, race, income level, education level, smoking history, drinking history, and activity level). Each fitting was conducted separately on all women and only perimenopausal women, at enrollment and 4 years after enrollment. Hormone levels, almost always interrelated, were the most common variable linked to hot flashes; hormone levels were sometimes related to body mass index, but were not directly related to any other risk factors. Smoking was also frequently associated with increased likelihood of severe symptoms, but not through an antiestrogenic pathway. The age at first hot flashes was related only to race. All other factors were either not related to outcomes or were mediated entirely by race, hormone levels, or smoking. These models can serve as a guide for design of studies into the causal network underlying hot flashes.

A FPGA-based Measurement System for Nonvolatile Semiconductor Memory Characterization

NASA Astrophysics Data System (ADS)

Bu, Jiankang; White, Marvin

2002-03-01

Low voltage, long retention, high density SONOS nonvolatile semiconductor memory (NVSM) devices are ideally suited for PCMCIA, FLASH and 'smart' cards. The SONOS memory transistor requires characterization with an accurate, rapid measurement system with minimum disturbance to the device. The FPGA-based measurement system includes three parts: 1) a pattern generator implemented with XILINX FPGAs and corresponding software, 2) a high-speed, constant-current, threshold voltage detection circuit, 3) and a data evaluation program, implemented with a LABVIEW program. Fig. 1 shows the general block diagram of the FPGA-based measurement system. The function generator is designed and simulated with XILINX Foundation Software. Under the control of the specific erase/write/read pulses, the analog detect circuit applies operational modes to the SONOS device under test (DUT) and determines the change of the memory-state of the SONOS nonvolatile memory transistor. The TEK460 digitizes the analog threshold voltage output and sends to the PC computer. The data is filtered and averaged with a LABVIEWTM program running on the PC computer and displayed on the monitor in real time. We have implemented the pattern generator with XILINX FPGAs. Fig. 2 shows the block diagram of the pattern generator. We realized the logic control by a method of state machine design. Fig. 3 shows a small part of the state machine. The flexibility of the FPGAs enhances the capabilities of this system and allows measurement variations without hardware changes. The characterization of the nonvolatile memory transistor device under test (DUT), as function of programming voltage and time, is achieved by a high-speed, constant-current threshold voltage detection circuit. The analog detection circuit incorporating fast analog switches controlled digitally with the FPGAs. The schematic circuit diagram is shown in Fig. 4. The various operational modes for the DUT are realized with control signals applied to the analog switches (SW) as shown in Fig. 5. A LABVIEWTM program, on a PC platform, collects and processes the data. The data is displayed on the monitor in real time. This time-domain filtering reduces the digitizing error. Fig. 6 shows the data processing. SONOS nonvolatile semiconductor memories are characterized by erase/write, retention and endurance measurements. Fig. 7 shows the erase/write characteristics of an n-Channel, 5V prog-rammable SONOS memory transistor. Fig.8 shows the retention characteristic of the same SONOS transistor. We have used this system to characterize SONOS nonvolatile semiconductor memory transistors. The attractive features of the test system design lies in the cost-effectiveness and flexibility of the test pattern implementation, fast read-out of memory state, low power, high precision determination of the device threshold voltage, and perhaps most importantly, minimum disturbance, which is indispensable for nonvolatile memory characterization.

Magnitude of the impact of hot flashes on sleep in perimenopausal women

PubMed Central

de Zambotti, Massimiliano; Colrain, Ian M.; Javitz, Harold S.; Baker, Fiona C.

2014-01-01

Objective To quantify the impact of objectively-recorded hot flashes on objective sleep in perimenopausal women. Design Cross-sectional study. Participants underwent 1–5 laboratory-based polysomnographic recordings for a total of 63 nights, including sternal skin conductance measures, from which 222 hot flashes were identified according to established criteria. Data were analyzed with hierarchical mixed-effect models and Spearman correlations. Setting Sleep laboratory. Patients 34 perimenopausal women (Age±SD:50.4±2.7y). Intervention None. Main Outcome Measures Perceived and polysomnographic sleep measures (sleep quality, amount of wake after sleep onset and number of awakenings). Subjective (frequency and bother) and objective (frequency and amount of hot flash-associated wake time) hot flash measures. Results Women had an average of 3.5 (95%CI:2.8–4.2, range=1– 9) objective hot flashes per night. 69.4% of hot flashes were associated with an awakening. Hot flash-associated wake time per night was, on average, 16.6 min (95%CI:10.8–22.4), which accounted for 27.2% (SD 27.1) of total wakefulness per night. Hot flash-associated wake, but not frequency, was negatively associated with sleep efficiency and positively associated with wake after sleep onset. Also, self-reported wakefulness correlated with hot flash-associated wake, suggesting that women’s estimates of wakefulness are influenced by the amount of time spent awake in association with hot flashes during the night. More perceived and bothersome hot flashes correlated with more perceived wakefulness and awakenings and more objective hot flash-associated wake time and hot flash frequency. Conclusions The presence of physiological hot flashes accounts for a significant proportion of total objective wakefulness during the night in perimenopausal women. PMID:25256933

The prediction of the flash point for binary aqueous-organic solutions.

PubMed

Liaw, Horng-Jang; Chiu, Yi-Yu

2003-07-18

A mathematical model, which may be used for predicting the flash point of aqueous-organic solutions, has been proposed and subsequently verified by experimentally-derived data. The results reveal that this model is able to precisely predict the flash point over the entire composition range of binary aqueous-organic solutions by way of utilizing the flash point data pertaining to the flammable component. The derivative of flash point with respect to composition (solution composition effect upon flash point) can be applied to process safety design/operation in order to identify as to whether the dilution of a flammable liquid solution with water is effective in reducing the fire and explosion hazard of the solution at a specified composition. Such a derivative equation was thus derived based upon the flash point prediction model referred to above and then verified by the application of experimentally-derived data.

Risk Factors, Pathophysiology, and Treatment of Hot Flashes in Cancer

PubMed Central

Fisher, William I.; Johnson, Aimee K.; Elkins, Gary R.; Otte, Julie L.; Burns, Debra S.; Yu, Menggang; Carpenter, Janet S.

2012-01-01

Hot flashes are prevalent and severe symptoms that can interfere with mood, sleep, and quality of life for women and men with cancer. The purpose of this article is to review existing literature on the risk factors, pathophysiology, and treatment of hot flashes in persons with cancer. Electronic searches were conducted to identify relevant, English-language literature published through June 15, 2012. Results indicated that risk factors for hot flashes in cancer include patient-related factors (eg, age, race/ethnicity, educational level, smoking history, cardiovascular risk including BMI, and genetics) and disease-related factors (eg, cancer diagnosis, and dose/type of treatment). In addition, although the pathophysiology of hot flashes has remained elusive, these symptoms are likely attributable to disruptions in thermoregulation and neurochemicals. Therapies that have been offered or tested fall into 4 broad categories: pharmacological, nutraceutical, surgical, and complementary/behavioral strategies. The evidence base for this broad range of therapies varies, with some treatments not yet having been fully tested or showing equivocal results. The evidence base surrounding all therapies is evaluated to enhance hot flash treatment decision making by clinicians and patients. PMID:23355109

Cost calculation for a flash glucose monitoring system for UK adults with type 1 diabetes mellitus receiving intensive insulin treatment.

PubMed

Hellmund, Richard; Weitgasser, Raimund; Blissett, Deirdre

2018-04-01

To estimate the costs associated with a flash glucose monitoring system as a replacement for routine self-monitoring of blood glucose (SMBG) in patients with type 1 diabetes mellitus (T1DM) using intensive insulin, from a UK National Health Service (NHS) perspective. The base-case cost calculation was created using the maximum frequency of glucose monitoring recommended by the 2015 National Institute for Health and Care Excellence guidelines (4-10 tests per day). Scenario analyses considered SMBG at the frequency observed in the IMPACT clinical trial (5.6 tests per day) and at the frequency of flash monitoring observed in a real-world analysis (16 tests per day). A further scenario included potential costs associated with severe hypoglycaemia. In the base case, the annual cost per patient using flash monitoring was £234 (19%) lower compared with routine SMBG (10 tests per day). In scenario analyses, the annual cost per patient of flash monitoring compared with 5.6 and 16 SMBG tests per day was £296 higher and £957 lower, respectively. The annual cost of severe hypoglycaemia for flash monitoring users was estimated to be £221 per patient, compared with £428 for routine SMBG users (based on 5.6 tests/day), corresponding to a reduction in costs of £207. The flash monitoring system has a modest impact on glucose monitoring costs for the UK NHS for patients with T1DM using intensive insulin. For people requiring frequent tests, flash monitoring may be cost saving, especially when taking into account potential reductions in the rate of severe hypoglycaemia. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Dendrogeomorphic analysis of flash floods in a small ungauged mountain catchment (Central Spain)

NASA Astrophysics Data System (ADS)

Ruiz-Villanueva, Virginia; Díez-Herrero, Andrés; Stoffel, Markus; Bollschweiler, Michelle; Bodoque, José M.; Ballesteros, Juan A.

2010-06-01

Flash floods represent one of the most significant natural hazards with serious death tolls and economic damage at a worldwide level in general and in Mediterranean mountain catchments in particular. In these environments, systematic data is often lacking and analyses have to be based on alternative approaches such as dendrogeomorphology. In this study, we focus on the identification of flash floods based on growth disturbances (GD) observed in 98 heavily affected Mediterranean pine trees ( Pinus pinaster Ait.) located in or next to the torrential channel of the Pelayo River in the Spanish Central System. Flash floods are quite common in this catchment and are triggered by heavy storms, with high discharge and debris transport rates favoured by high stream gradients. Comparison of the anomalies in tree morphology and the position of the trees in the channel showed that the intensity of the disturbance clearly depends on geomorphology. The dating of past flash flood events was based on the number and intensity of GD observed in the tree-ring series and on the spatial distribution of affected trees along the torrent, thus allowing seven flash flood events during the last 50 years to be dated, namely in 1963, 1966, 1973, 1976, 1996, 2000, and 2005.

Dendrogeomorphic analysis of Flash Floods in a small ungauged mountain catchment (Central Spain)

NASA Astrophysics Data System (ADS)

Ruiz-Villanueva, Virginia; Díez-Herrero, Andrés.; Stoffel, Markus; Bollschweiler, Michelle; María Bodoque, José; Ballesteros, Juan Antonio

2010-05-01

Flash floods represent one of the most significant natural hazards with serious death tolls and economic damage at a worldwide level in general and in Mediterranean mountain catchments in particular. In these environments, systematic data is often lacking and analyses have to be based on alternative approaches such as dendrogeomorphology. In this study, we focus on the identification of flash floods based on growth disturbances (GD) observed in 98 heavily affected Mediterranean pine trees (Pinus pinaster Ait.) located in or next to the torrential channel of the Pelayo River in the Spanish Central System. Flash floods are quite common in this catchment and are triggered by heavy storms, with high discharge and debris transport rates favoured by high stream gradients. Comparison of the anomalies in tree morphology and the position of the trees in the channel showed that the intensity of the disturbance clearly depends on geomorphology. The dating of past flash-flood events was based on the number and intensity of GD observed in the tree-ring series, and on the spatial distribution of affected trees along the torrent, thus allowing seven flash-flood events during the last ~50 years to be dated, namely in 1963, 1966, 1973, 1976, 1996, 2000, and 2005.

NEW EPICS/RTEMS IOC BASED ON ALTERA SOC AT JEFFERSON LAB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Jianxun; Seaton, Chad; Allison, Trent L.

A new EPICS/RTEMS IOC based on the Altera System-on-Chip (SoC) FPGA is being designed at Jefferson Lab. The Altera SoC FPGA integrates a dual ARM Cortex-A9 Hard Processor System (HPS) consisting of processor, peripherals and memory interfaces tied seamlessly with the FPGA fabric using a high-bandwidth interconnect backbone. The embedded Altera SoC IOC has features of remote network boot via U-Boot from SD card or QSPI Flash, 1Gig Ethernet, 1GB DDR3 SDRAM on HPS, UART serial ports, and ISA bus interface. RTEMS for the ARM processor BSP were built with CEXP shell, which will dynamically load the EPICS applications atmore » runtime. U-Boot is the primary bootloader to remotely load the kernel image into local memory from a DHCP/TFTP server over Ethernet, and automatically run RTEMS and EPICS. The first design of the SoC IOC will be compatible with Jefferson Lab’s current PC104 IOCs, which have been running in CEBAF 10 years. The next design would be mounting in a chassis and connected to a daughter card via standard HSMC connectors. This standard SoC IOC will become the next generation of low-level IOC for the accelerator controls at Jefferson Lab.« less

KSC-04PD-1812

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, United Space Alliance worker Craig Meyer fits an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04PD-1813

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, an External Tank (ET) digital still camera is positioned into the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis to determine if it fits properly. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1813

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, an External Tank (ET) digital still camera is positioned into the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis to determine if it fits properly. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1812

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, United Space Alliance worker Craig Meyer fits an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

NASA Astrophysics Data System (ADS)

Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.

2018-05-01

The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

Birth of the International Lunar Impact Astronomical Detection (ILIAD) network : first detections in Morocco

NASA Astrophysics Data System (ADS)

Ait Moulay Larbi, E.; Bouley, S.; Dassou, A.; Benkhaldoun, Z.; Baratoux, D.; Lazrek, M.

2013-12-01

We present the research environment of our network. We highlight some results of the analysis of the first Lunar Meteorides impacts detected in Morocco. We present an exemple of ground-based instrumentation to carry out a successful search for lunar flashes phenomena. We also discuss the interest to monotoring these phenomena by focusing on the interest of determining the positions of the craters on the moon. The precise determination of impact flashes is very advantageous, especially in the near future there will be several new craters identified by LROC or other robotic spacecraft cameras. The two flashes reported in this study are optimally situated on central region of the lunar disk, which reduce the mismatch between the barycenter of radiation and the actual position of the impact. Smaller-scale lunar features are easily identified after superposition of a large number of images in order to increase the signal to noise ratio and produce an optimal image of the non-illuminated fraction of the moon. The sub-pixel shift of each image relative to the first frame (base frame) was determined by fitting the correlation peak obtained in the Fourier space to a 2- dimensional gaussian following Schaum and McHugh [1996]; Baratoux et al. [2001]. To increase further the positioning, the signal of the flash is is fitted to a 2-dimensional gaussian for each frame (previously shifted to the base image) where the flash is present. The barycenter of the flash is given as the rounded to the nearest integer of the average centers of the 2-dimensional gaussian functions. Two impact flashes are detected from AGM observatory in Marrakech, respectively on the February 6, 2013, at 06:29:56.7 UT and April 14, 2013, 20:00:45.4 UT. The characteristics of each flash are given in the table below. the diameter of the crater formed on the lunar surface can be estimated using Gault's formula for craters of less than 100 m in diameter, the results show that the meteoroids are likely producing craters of about 2.5 m and 4.4 m in diameter for Flash 1 and 2, respectively.Characteristics of lunar impact flashes

A Wrf-Chem Flash Rate Parameterization Scheme and LNO(x) Analysis of the 29-30 May 2012 Convective Event in Oklahoma During DC3

NASA Technical Reports Server (NTRS)

Cummings, Kristin A.; Pickering, Kenneth E.; Barth, M.; Weinheimer, A.; Bela, M.; Li, Y.; Allen, D.; Bruning, E.; MacGorman, D.; Rutledge, S.;

A WRF-Chem Flash Rate Parameterization Scheme and LNOx Analysis of the 29-30 May 2012 Convective Event in Oklahoma During DC3

NASA Technical Reports Server (NTRS)

Cummings, Kristin A.; Pickering, Kenneth E.; Barth, M.; Weinheimer, A.; Bela, M.; Li, Y.; Allen, D.; Bruning, E.; MacGorman, D.; Rutledge, S.;

The Evolution and Structure of Extreme Optical Lightning Flashes

PubMed Central

Peterson, Michael; Rudlosky, Scott; Deierling, Wiebke

2018-01-01

This study documents the composition, morphology, and motion of extreme optical lightning flashes observed by the Lightning Imaging Sensor (LIS). The furthest separation of LIS events (groups) in any flash is 135 km (89 km), the flash with the largest footprint had an illuminated area of 10,604 km2, and the most dendritic flash has 234 visible branches. The longest-duration convective LIS flash lasted 28 s and is overgrouped and not physical. The longest-duration convective-to-stratiform propagating flash lasted 7.4 s, while the longest-duration entirely stratiform flash lasted 4.3 s. The longest series of nearly consecutive groups in time lasted 242 ms. The most radiant recorded LIS group (i.e., “superbolt”) is 735 times more radiant than the average group. Factors that impact these optical measures of flash morphology and evolution are discussed. While it is apparent that LIS can record the horizontal development of the lightning channel in some cases, radiative transfer within the cloud limits the flash extent and level of detail measured from orbit. These analyses nonetheless suggest that lightning imagers such as LIS and Geostationary Lightning Mapper can complement ground-based lightning locating systems for studying physical lightning phenomena across large geospatial domains. PMID:29527425

Assessing Homegrown Library Collections: Using Google Analytics to Track Use of Screencasts and Flash-Based Learning Objects

ERIC Educational Resources Information Center

Betty, Paul

2009-01-01

Increasing use of screencast and Flash authoring software within libraries is resulting in "homegrown" library collections of digital learning objects and multimedia presentations. The author explores the use of Google Analytics to track usage statistics for interactive Shockwave Flash (.swf) files, the common file output for screencast and Flash…

Minimizing the Disruptive Effects of Prospective Memory in Simulated Air Traffic Control

PubMed Central

Loft, Shayne; Smith, Rebekah E.; Remington, Roger

2015-01-01

Prospective memory refers to remembering to perform an intended action in the future. Failures of prospective memory can occur in air traffic control. In two experiments, we examined the utility of external aids for facilitating air traffic management in a simulated air traffic control task with prospective memory requirements. Participants accepted and handed-off aircraft and detected aircraft conflicts. The prospective memory task involved remembering to deviate from a routine operating procedure when accepting target aircraft. External aids that contained details of the prospective memory task appeared and flashed when target aircraft needed acceptance. In Experiment 1, external aids presented either adjacent or non-adjacent to each of the 20 target aircraft presented over the 40min test phase reduced prospective memory error by 11% compared to a condition without external aids. In Experiment 2, only a single target aircraft was presented a significant time (39min–42min) after presentation of the prospective memory instruction, and the external aids reduced prospective memory error by 34%. In both experiments, costs to the efficiency of non-prospective memory air traffic management (non-target aircraft acceptance response time, conflict detection response time) were reduced by non-adjacent aids compared to no aids or adjacent aids. In contrast, in both experiments, the efficiency of the prospective memory air traffic management (target aircraft acceptance response time) was facilitated by adjacent aids compared to non-adjacent aids. Together, these findings have potential implications for the design of automated alerting systems to maximize multi-task performance in work settings where operators monitor and control demanding perceptual displays. PMID:24059825

Blue light filtered white light induces depression-like responses and temporary spatial learning deficits in rats.

PubMed

Meng, Qinghe; Lian, Yuzheng; Jiang, Jianjun; Wang, Wei; Hou, Xiaohong; Pan, Yao; Chu, Hongqian; Shang, Lanqin; Wei, Xuetao; Hao, Weidong

2018-04-18

Ambient light has a vital impact on mood and cognitive functions. Blue light has been previously reported to play a salient role in the antidepressant effect via melanopsin. Whether blue light filtered white light (BFW) affects mood and cognitive functions remains unclear. The present study aimed to investigate whether BFW led to depression-like symptoms and cognitive deficits including spatial learning and memory abilities in rats, and whether they were associated with the light-responsive function in retinal explants. Male Sprague-Dawley albino rats were randomly divided into 2 groups (n = 10) and treated with a white light-emitting diode (LED) light source and BFW light source, respectively, under a standard 12 : 12 h L/D condition over 30 days. The sucrose consumption test, forced swim test (FST) and the level of plasma corticosterone (CORT) were employed to evaluate depression-like symptoms in rats. Cognitive functions were assessed by the Morris water maze (MWM) test. A multi-electrode array (MEA) system was utilized to measure electro-retinogram (ERG) responses induced by white or BFW flashes. The effect of BFW over 30 days on depression-like responses in rats was indicated by decreased sucrose consumption in the sucrose consumption test, an increased immobility time in the FST and an elevated level of plasma CORT. BFW led to temporary spatial learning deficits in rats, which was evidenced by prolonged escape latency and swimming distances in the spatial navigation test. However, no changes were observed in the short memory ability of rats treated with BFW. The micro-ERG results showed a delayed implicit time and reduced amplitudes evoked by BFW flashes compared to the white flash group. BFW induces depression-like symptoms and temporary spatial learning deficits in rats, which might be closely related to the impairment of light-evoked output signals in the retina.

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

PubMed

Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

2016-07-20

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Analytic Perturbation Method for Estimating Ground Flash Fraction from Satellite Lightning Observations

NASA Technical Reports Server (NTRS)

Koshak, William; Solakiewicz, Richard

2013-01-01

An analytic perturbation method is introduced for estimating the lightning ground flash fraction in a set of N lightning flashes observed by a satellite lightning mapper. The value of N is large, typically in the thousands, and the observations consist of the maximum optical group area produced by each flash. The method is tested using simulated observations that are based on Optical Transient Detector (OTD) and Lightning Imaging Sensor (LIS) data. National Lightning Detection NetworkTM (NLDN) data is used to determine the flash-type (ground or cloud) of the satellite-observed flashes, and provides the ground flash fraction truth for the simulation runs. It is found that the mean ground flash fraction retrieval errors are below 0.04 across the full range 0-1 under certain simulation conditions. In general, it is demonstrated that the retrieval errors depend on many factors (i.e., the number, N, of satellite observations, the magnitude of random and systematic measurement errors, and the number of samples used to form certain climate distributions employed in the model).

Anomalous annealing of floating gate errors due to heavy ion irradiation

NASA Astrophysics Data System (ADS)

Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong

2018-03-01

Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy-ion induced floating gate (FG) errors in 34 nm and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.

Analog Nonvolatile Computer Memory Circuits

NASA Technical Reports Server (NTRS)

MacLeod, Todd

2007-01-01

In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values.

Impact of rainfall spatial variability on Flash Flood Forecasting

NASA Astrophysics Data System (ADS)

Douinot, Audrey; Roux, Hélène; Garambois, Pierre-André; Larnier, Kevin

2014-05-01

According to the United States National Hazard Statistics database, flooding and flash flooding have caused the largest number of deaths of any weather-related phenomenon over the last 30 years (Flash Flood Guidance Improvement Team, 2003). Like the storms that cause them, flash floods are very variable and non-linear phenomena in time and space, with the result that understanding and anticipating flash flood genesis is far from straightforward. In the U.S., the Flash Flood Guidance (FFG) estimates the average number of inches of rainfall for given durations required to produce flash flooding in the indicated county. In Europe, flash flood often occurred on small catchments (approximately 100 km2) and it has been shown that the spatial variability of rainfall has a great impact on the catchment response (Le Lay and Saulnier, 2007). Therefore, in this study, based on the Flash flood Guidance method, rainfall spatial variability information is introduced in the threshold estimation. As for FFG, the threshold is the number of millimeters of rainfall required to produce a discharge higher than the discharge corresponding to the first level (yellow) warning of the French flood warning service (SCHAPI: Service Central d'Hydrométéorologie et d'Appui à la Prévision des Inondations). The indexes δ1 and δ2 of Zoccatelli et al. (2010), based on the spatial moments of catchment rainfall, are used to characterize the rainfall spatial distribution. Rainfall spatial variability impacts on warning threshold and on hydrological processes are then studied. The spatially distributed hydrological model MARINE (Roux et al., 2011), dedicated to flash flood prediction is forced with synthetic rainfall patterns of different spatial distributions. This allows the determination of a warning threshold diagram: knowing the spatial distribution of the rainfall forecast and therefore the 2 indexes δ1 and δ2, the threshold value is read on the diagram. A warning threshold diagram is built for each studied catchment. The proposed methodology is applied on three Mediterranean catchments often submitted to flash floods. The new forecasting method as well as the Flash Flood Guidance method (uniform rainfall threshold) are tested on 25 flash floods events that had occurred on those catchments. Results show a significant impact of rainfall spatial variability. Indeed, it appears that the uniform rainfall threshold (FFG threshold) always overestimates the observed rainfall threshold. The difference between the FFG threshold and the proposed threshold ranges from 8% to 30%. The proposed methodology allows the calculation of a threshold more representative of the observed one. However, results strongly depend on the related event duration and on the catchment properties. For instance, the impact of the rainfall spatial variability seems to be correlated with the catchment size. According to these results, it seems to be interesting to introduce information on the catchment properties in the threshold calculation. Flash Flood Guidance Improvement Team, 2003. River Forecast Center (RFC) Development Management Team. Final Report. Office of Hydrologic Development (OHD), Silver Spring, Mary-land. Le Lay, M. and Saulnier, G.-M., 2007. Exploring the signature of climate and landscape spatial variabilities in flash flood events: Case of the 8-9 September 2002 Cévennes-Vivarais catastrophic event. Geophysical Research Letters, 34(L13401), doi:10.1029/2007GL029746. Roux, H., Labat, D., Garambois, P.-A., Maubourguet, M.-M., Chorda, J. and Dartus, D., 2011. A physically-based parsimonious hydrological model for flash floods in Mediterranean catchments. Nat. Hazards Earth Syst. Sci. J1 - NHESS, 11(9), 2567-2582. Zoccatelli, D., Borga, M., Zanon, F., Antonescu, B. and Stancalie, G., 2010. Which rainfall spatial information for flash flood response modelling? A numerical investigation based on data from the Carpathian range, Romania. Journal of Hydrology, 394(1-2), 148-161.

A first look at global flash drought: long term change and short term predictability

NASA Astrophysics Data System (ADS)

Yuan, Xing; Wang, Linying; Ji, Peng

2017-04-01

"Flash drought" became popular after the unexpected 2012 central USA drought, mainly due to its rapid development, low predictability and devastating impacts on water resources and crop yields. A pilot study by Mo and Lettenmaier (2015) found that flash drought, based on a definition of concurrent heat extreme, soil moisture deficit and evapotranspiration (ET) enhancement at pentad scale, were in decline over USA during recent 100 years. Meanwhile, a recent work indicated that the occurrence of flash drought in China was doubled during the past 30 years, where a severe flash drought in the summer of 2013 ravaged 13 provinces in southern China. As global warming increases the frequency of heat waves and accelerates the hydrological cycle, the flash drought is expected to increase in general, but its trend might also be affected by interannual to decadal climate oscillations. To consolidate the hotspots of flash drought and the effects of climate change on flash drought, a global inventory is being conducted by using multi-source observations (in-situ, satellite and reanalysis), CMIP5 historical simulations and future projections under different forcing scenarios, as well as global land surface hydrological modeling for key variables including surface air temperature, soil moisture and ET. In particular, a global picture of the flash drought distribution, the contribution of naturalized and anthropogenic forcings to global flash drought change, and the risk of global flash drought in the future, will be presented. Besides investigating the long-term change of flash drought, providing reliable early warning is also essential to developing adaptation strategies. While regional drought early warning systems have been emerging in recent decade, forecasting of flash drought is still at an exploratory stage due to limited understanding of flash drought predictability. Here, a set of sub-seasonal to seasonal (S2S) hindcast datasets are being used to assess the short term predictability of flash drought via a perfect model assumption.

Characteristics of flash initiations in a supercell cluster with tornadoes

NASA Astrophysics Data System (ADS)

Zheng, Dong; MacGorman, Donald R.

2016-01-01

Flash initiations within a supercell cluster during 10-11 May 2010 in Oklahoma were investigated based on observations from the Oklahoma Lightning Mapping Array and the Norman, Oklahoma, polarimetric radar (KOUN). The flash initiations at positions dominated by graupel, dry snow, small hail and crystals accounted for 44.3%, 44.1%, 8.0% and 3.0% of the total flashes, respectively. During the tornadic stage of the southern supercell in the cluster, flash initiations associated with graupel occupied the main body, the right flank and the forward flank of the supercell, while those associated with dry snow dominated the outskirts of the adjacent forward anvil, right anvil and rear anvil. The flash initiations associated with small hail were concentrated around the main updraft, particularly toward its front side. Highly dense flash initiations were located in the regions overlying the differential reflectivity (ZDR) arc and right anvil. The average initial height of the flashes decreased gradually from the rear to the front and from the right to the left flanks, while the height range over which initiations occurred reached a maximum at the front of the updraft. The flashes that were initiated in the adjacent forward anvils were largest on average, followed by those in the regions ahead of the updraft and near the ZDR arc. This study supports the concept of charge pockets and further deduces that the pockets in the right anvil are the most abundant and compact due to the frequent flash initiations, small-sized flashes and thin layers including flash initiations.

Two types of flash drought over China and their connections with sub-seasonal to seasonal soil moisture drought

NASA Astrophysics Data System (ADS)

Wang, L.; Yuan, X.; Xie, Z.

2017-12-01

Flash drought has been receiving attention recently due to its rapid development and vast damage on crops in the growing season. Accompanied with heatwave and rainfall deficit, the soil moisture decreased rapidly in a short time and may lead to the failure of root water uptake and large-scale crops wither. There are two types of flash droughts according to the causes (Mo and Lettenmaier, 2016), i.e., heat wave flash drought and rainfall deficit flash drought. Here, based on pentad-mean surface air temperature and precipitation observations from over two thousand meteorological stations as well as soil moisture and ET estimations from three global reanalysis products, the characteristics and evolution of the two types of flash droughts over China are being explored. Heat wave flash drought is more likely to occur in humid and semi-humid areas, such as southern China, while rainfall deficit flash drought is more likely to occur in northern China. Unlike the traditional drought that persists for a few months to decades, the mean durations of both types of flash droughts are very short. We use monthly mean soil moisture to calculate sub-seasonal to seasonal (S2S) soil moisture drought, and compare its characteristics and preferred conditions such as the large-scale atmospheric circulation and oceanic anomaly for both types of flash droughts. The percentages of flash drought in different periods of S2S drought are also being explored to see the potential relationship between flash drought and S2S drought over different regions.

[The P300-based brain-computer interface: presentation of the complex "flash + movement" stimuli].

PubMed

Ganin, I P; Kaplan, A Ia

2014-01-01

The P300 based brain-computer interface requires the detection of P300 wave of brain event-related potentials. Most of its users learn the BCI control in several minutes and after the short classifier training they can type a text on the computer screen or assemble an image of separate fragments in simple BCI-based video games. Nevertheless, insufficient attractiveness for users and conservative stimuli organization in this BCI may restrict its integration into real information processes control. At the same time initial movement of object (motion-onset stimuli) may be an independent factor that induces P300 wave. In current work we checked the hypothesis that complex "flash + movement" stimuli together with drastic and compact stimuli organization on the computer screen may be much more attractive for user while operating in P300 BCI. In 20 subjects research we showed the effectiveness of our interface. Both accuracy and P300 amplitude were higher for flashing stimuli and complex "flash + movement" stimuli compared to motion-onset stimuli. N200 amplitude was maximal for flashing stimuli, while for "flash + movement" stimuli and motion-onset stimuli it was only a half of it. Similar BCI with complex stimuli may be embedded into compact control systems requiring high level of user attention under impact of negative external effects obstructing the BCI control.

FlaME: Flash Molecular Editor - a 2D structure input tool for the web.

PubMed

Dallakian, Pavel; Haider, Norbert

2011-02-01

So far, there have been no Flash-based web tools available for chemical structure input. The authors herein present a feasibility study, aiming at the development of a compact and easy-to-use 2D structure editor, using Adobe's Flash technology and its programming language, ActionScript. As a reference model application from the Java world, we selected the Java Molecular Editor (JME). In this feasibility study, we made an attempt to realize a subset of JME's functionality in the Flash Molecular Editor (FlaME) utility. These basic capabilities are: structure input, editing and depiction of single molecules, data import and export in molfile format. The result of molecular diagram sketching in FlaME is accessible in V2000 molfile format. By integrating the molecular editor into a web page, its communication with the HTML elements on this page is established using the two JavaScript functions, getMol() and setMol(). In addition, structures can be copied to the system clipboard. A first attempt was made to create a compact single-file application for 2D molecular structure input/editing on the web, based on Flash technology. With the application examples presented in this article, it could be demonstrated that the Flash methods are principally well-suited to provide the requisite communication between the Flash object (application) and the HTML elements on a web page, using JavaScript functions.

Towards Terabit Memories

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet little data on their energy/b. As a read-out memory with unparalleled retention and lifetime, the ROM with electron-beam direct-write-lithography (Chap. 8) should be considered for its projected 2D density of 250 Gb/cm², a very small read energy of 0.1 μW/Gb/s. The lithography write-speed 10 ms/Terabit makes this ROM a serious contentender for the optimum in non-volatile, tamper-proof storage.

A place-based model for assessing the coherence of the flash floods and socio-economic vulnerability across the Contiguous United States (CONUS)

NASA Astrophysics Data System (ADS)

Khajehei, S.; Moradkhani, H.

2017-12-01

Understanding socio-economic characteristics involving natural hazards potential, vulnerability, and resilience is necessary to address the damages to economy and loss of life from extreme natural hazards. The vulnerability to flash floods is dependent on both biophysical and socio-economic factors. Although the biophysical characteristics (e.g. climate, vegetation, and land use) are informative and useful for predicting spatial and temporal extent of flash floods, they have minimal bearing on predicting when and where flash floods are likely to influence people or damage valuable assets and resources. The socio-economic factors determine spatial and temporal scales of the regions affected by flash floods. In this study, we quantify the socio-economic vulnerability to flash floods across the Contiguous United States (CONUS). A socio-economic vulnerability index was developed, employing Bayesian principal components for each state in the CONUS. For this purpose, extensive sets of social and economic variables from US Census and the Bureau of Economic Analysis were used. We developed maps presenting the coincidence of socio-economic vulnerability and the flash floods records. This product can help inform flash flood prevention, mitigation and recovery planning, as well as reducing the flash flood hazards affecting vulnerable places and population.

FLASH free-electron laser single-shot temporal diagnostic: terahertz-field-driven streaking.

PubMed

Ivanov, Rosen; Liu, Jia; Brenner, Günter; Brachmanski, Maciej; Düsterer, Stefan

2018-01-01

The commissioning of a terahertz-field-driven streak camera installed at the free-electron laser (FEL) FLASH at DESY in Hamburg, being able to deliver photon pulse duration as well as arrival time information with ∼10 fs resolution for each single XUV FEL pulse, is reported. Pulse durations between 300 fs and <15 fs have been measured for different FLASH FEL settings. A comparison between the XUV pulse arrival time and the FEL electron bunch arrival time measured at the FLASH linac section exhibits a correlation width of 20 fs r.m.s., thus demonstrating the excellent operation stability of FLASH. In addition, the terahertz-streaking setup was operated simultaneously to an alternative method to determine the FEL pulse duration based on spectral analysis. FLASH pulse duration derived from simple spectral analysis is in good agreement with that from terahertz-streaking measurement.

Flash floods warning technique based on wireless communication networks data

NASA Astrophysics Data System (ADS)

David, Noam; Alpert, Pinhas; Messer, Hagit

2010-05-01

Flash floods can occur throughout or subsequent to rainfall events, particularly in cases where the precipitation is of high-intensity. Unfortunately, each year these floods cause severe property damage and heavy casualties. At present, there are no sufficient real time flash flood warning facilities found to cope with this phenomenon. Here we show the tremendous potential of flash floods advanced warning based on precipitation measurements of commercial microwave links. As was recently shown, wireless communication networks supply high resolution precipitation measurements at ground level while often being situated in flood prone areas, covering large parts of these hazardous regions. We present the flash flood warning potential of the wireless communication system for two different cases when floods occurred at the Judean desert and at the northern Negev in Israel. In both cases, an advanced warning regarding the hazard could have been announced based on this system. • This research was supported by THE ISRAEL SCIENCE FOUNDATION (grant No. 173/08). This work was also supported by a grant from the Yeshaya Horowitz Association, Jerusalem. Additional support was given by the PROCEMA-BMBF project and by the GLOWA-JR BMBF project.

Description of an Audio-Based Paced Respiration Intervention for Vasomotor Symptoms

PubMed Central

Burns, Debra S.; Drews, Michael R.; Carpenter, Janet S.

2013-01-01

Millions of women experience menopause-related hot flashes or flushes that may have a negative effect on their quality of life. Hormone therapy is an effective treatment, however, it may be contraindicated or unacceptable for some women based on previous health complications or an undesirable risk–benefit ratio. Side effects and the unacceptability of hormone therapy have created a need for behavioral interventions to reduce hot flashes. A variety of complex, multimodal behavioral, relaxation-based interventions have been studied with women (n = 88) and showed generally favorable results. However, currently extensive resource commitments reduce the translation of these interventions into standard care. Slow, deep breathing is a common component in most interventions and may be the active ingredient leading to reduced hot flashes. This article describes the content of an audio-based program designed to teach paced breathing to reduce hot flashes. Intervention content was based on skills training theory and music entrainment. The audio intervention provides an efficient way to deliver a breathing intervention that may be beneficial to other clinical populations. PMID:23914283

Development of a fluorimeter using laser-induced single-shot fluorescence lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Eisum, Niels H.; Lynggaard-Jensen, Anders

1990-08-01

The developed laboratory prototype fluorimeter is the first step to a new in-situ instrument, and is based on a pulsed nitrogen laser (pumping a color dye laser and the laserbeam passing through a frequency doubler) with a pulse width less than 1 nsec. With such a short excitation pulse it is possible to measure the exponential decay of the fluorescence from the aromatic compounds and thus determine the fluorescence lifetime-curves, which are typically in the region of 5-40 nsec. The emitted fluorescence is collected simultaneously in 35 channels in the wavelength region 250-600 nm. If the fluorescence falls within the transmission areas of the interference filters in each channel the light will be collected by a plastic light guide (doped PMMA) in the actual channel and transmitted to the channels photo multiplier tube (PMT). (The use of the plastic light guide improves the sensitivity). The signal from the PMT is passed on to a 200 MHz 8-bit flash AID-converter connected to a local memory. From this local memory the digital lifetime curves from each channel are transmitted to a computer for presentation of the 3-dimensional spectrum. This spectrum has been obtained with a single laser shot.

340nm UV LED excitation in time-resolved fluorescence system for europium-based immunoassays detection

NASA Astrophysics Data System (ADS)

Rodenko, Olga; Fodgaard, Henrik; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2017-02-01

In immunoassay analyzers for in-vitro diagnostics, Xenon flash lamps have been widely used as excitation light sources. Recent advancements in UV LED technology and its advantages over the flash lamps such as smaller footprint, better wall-plug efficiency, narrow emission spectrum, and no significant afterglow, have made them attractive light sources for gated detection systems. In this paper, we report on the implementation of a 340 nm UV LED based time-resolved fluorescence system based on europium chelate as a fluorescent marker. The system performance was tested with the immunoassay based on the cardiac marker, TnI. The same signal-to-noise ratio as for the flash lamp based system was obtained, operating the LED below specified maximum current. The background counts of the system and its main contributors were measured and analyzed. The background of the system of the LED based unit was improved by 39% compared to that of the Xenon flash lamp based unit, due to the LEDs narrower emission spectrum and longer pulse width. Key parameters of the LED system are discussed to further optimize the signal-to-noise ratio and signal-to-background, and hence the sensitivity of the instrument.

The Association between Body Mass Index and Hot Flash in Midlife Women: A Meta-analysis.

PubMed

Shobeiri, Fatemeh; Jenabi, Ensiyeh; Poorolajal, Jalal; Hazavehei, Seyyed Mohammad Mahdi

2016-04-01

The association between body mass index (BMI) and hot flash risk has not been specifically clarifies yet. This meta-analysis was, therefore, conducted to estimate the association between overweight and obesity and hot flash risk. We searched PubMed, Web of Science, and Scopus for observational studies addressing the association between BMI and hot flash until August 2015. Data were independently extracted and analyzed using 95% odds ratio (OR), and confidence intervals (CI) based on the random-effects models. We identified 2,244 references and conducted seven studies with 4,219 participants. The association between hot flash and overweight was estimated 1.13 (95% CI: 0.97-1.32) and that of obesity was estimated 1.79 (95% CI: 1.52-2.11). No evidence of heterogeneity and publication bias was observed. This meta-analysis demonstrated that, though not to a great extent, obesity does increase the risk of hot flash. The findings from this meta-analysis indicated that obesity is associated with an increased risk of hot flash. Further large prospective cohort studies are required to provide convincing evidence as to whether or not BMI is associated with an increased risk of hot flashes.

KSC-04PD-1810

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser prepare to conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04PD-1811

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1811

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1810

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser prepare to conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Ground- and Space-based Observations of Horizontally-extensive Lightning Flashes

NASA Astrophysics Data System (ADS)

Zhang, D.; Cummins, K. L.; Bitzer, P. M.

2017-12-01

Horizontally-extensive lightning flashes occur frequently in association with mature and late phases of multicellular thunderstorms, both in trailing stratiform regions and horizontally-extensive anvils. The spatial relationship between these flashes and the parent cloud volume is of importance for space launch operational decision making, and is of broader scientific interest. Before this question can be accurately addressed, there is a need to understand the degree to which current lightning observation systems can depict the spatial extent of these long flashes. In this ongoing work, we will intercompare the depiction of horizontally-extensive flashes using several ground-based lightning locating systems (LLSs) located at Kennedy Space Center (KSC) with space-based observations observed by the recently-launched Geostationary Lightning Mapper (GLM) onboard the GOES-16 satellite. Ground-based datasets include the KSC Lightning Mapping Array (KSCLMA), the operational narrowband digital interferometer network MERLIN, and the combined cloud-to-ground and cloud lightning dataset produced by the U.S. National Lightning Detection Network (NLDN). The KSCLMA system is a network of VHF time-of-arrival sensors that preferentially report breakdown processes, and MERLIN is a network of VHF interferometers that point to the discharges in the horizontal plane. Observations to date indicate that MERLIN and the KSCSLMA provide similar overall descriptions of the spatial and temporal extent of these flashes, while the NLDN does not provide adequate spatial mapping of these flashes. The KSC LMA system has much better location accuracy, and provides excellent 3-dimensional representation within 100 km of KSC. It also has sufficient sensitivity to provide 2-dimensional flash mapping within 250 km of KSC. The MERLIN system provides a more-detailed representation of fast leader propagation (in 2 dimensions) with 100 km of KSC. Earlier work during the CHUVA campaign in Brazil with similar systems and the (orbital) Lightning Imaging System (LIS) has shown that the interferometric data correlated much better in space and time with the LIS optical observations. We are currently investigating this relationship at KSC, where both the LMA and interferometer perform much better than the systems used during CHUVA.

Block-Parallel Data Analysis with DIY2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozov, Dmitriy; Peterka, Tom

DIY2 is a programming model and runtime for block-parallel analytics on distributed-memory machines. Its main abstraction is block-structured data parallelism: data are decomposed into blocks; blocks are assigned to processing elements (processes or threads); computation is described as iterations over these blocks, and communication between blocks is defined by reusable patterns. By expressing computation in this general form, the DIY2 runtime is free to optimize the movement of blocks between slow and fast memories (disk and flash vs. DRAM) and to concurrently execute blocks residing in memory with multiple threads. This enables the same program to execute in-core, out-of-core, serial,more » parallel, single-threaded, multithreaded, or combinations thereof. This paper describes the implementation of the main features of the DIY2 programming model and optimizations to improve performance. DIY2 is evaluated on benchmark test cases to establish baseline performance for several common patterns and on larger complete analysis codes running on large-scale HPC machines.« less

A global flash flood forecasting system

NASA Astrophysics Data System (ADS)

Baugh, Calum; Pappenberger, Florian; Wetterhall, Fredrik; Hewson, Tim; Zsoter, Ervin

2016-04-01

The sudden and devastating nature of flash flood events means it is imperative to provide early warnings such as those derived from Numerical Weather Prediction (NWP) forecasts. Currently such systems exist on basin, national and continental scales in Europe, North America and Australia but rely on high resolution NWP forecasts or rainfall-radar nowcasting, neither of which have global coverage. To produce global flash flood forecasts this work investigates the possibility of using forecasts from a global NWP system. In particular we: (i) discuss how global NWP can be used for flash flood forecasting and discuss strengths and weaknesses; (ii) demonstrate how a robust evaluation can be performed given the rarity of the event; (iii) highlight the challenges and opportunities in communicating flash flood uncertainty to decision makers; and (iv) explore future developments which would significantly improve global flash flood forecasting. The proposed forecast system uses ensemble surface runoff forecasts from the ECMWF H-TESSEL land surface scheme. A flash flood index is generated using the ERIC (Enhanced Runoff Index based on Climatology) methodology [Raynaud et al., 2014]. This global methodology is applied to a series of flash floods across southern Europe. Results from the system are compared against warnings produced using the higher resolution COSMO-LEPS limited area model. The global system is evaluated by comparing forecasted warning locations against a flash flood database of media reports created in partnership with floodlist.com. To deal with the lack of objectivity in media reports we carefully assess the suitability of different skill scores and apply spatial uncertainty thresholds to the observations. To communicate the uncertainties of the flash flood system output we experiment with a dynamic region-growing algorithm. This automatically clusters regions of similar return period exceedence probabilities, thus presenting the at-risk areas at a spatial resolution appropriate to the NWP system. We then demonstrate how these warning areas could eventually complement existing global systems such as the Global Flood Awareness System (GloFAS), to give warnings of flash floods. This work demonstrates the possibility of creating a global flash flood forecasting system based on forecasts from existing global NWP systems. Future developments, in post-processing for example, will need to address an under-prediction bias, for extreme point rainfall, that is innate to current-generation global models.

Gamma ray flashes add to mystery of upper atmosphere

NASA Astrophysics Data System (ADS)

Atmospheric electricity research has come a long way since Benjamin Franklin's kite-flying days. But what researchers have been learning lately about above-thunderstorm electricity has wrought a whole new era of mysteries.For a start, last summer a Colorado meteorologist sparked interest in a terrestrial phenomenon that the community first observed more than 100 years ago: optical flashes that occur above thunderstorms—at least 30 km above Earth. Walter Lyons with the Ft. Collins-based Mission Research Corporation, demonstrated that such flashes are not anomalies, as conventional scientific wisdom had held. He filmed hundreds of flashes during a 2-week period.

Abdominal adiposity and hot flashes among midlife women.

PubMed

Thurston, Rebecca C; Sowers, MaryFran R; Sutton-Tyrrell, Kim; Everson-Rose, Susan A; Lewis, Tené T; Edmundowicz, Daniel; Matthews, Karen A

2008-01-01

Two competing hypotheses suggest how adiposity may affect menopausal hot flashes. The "thin hypothesis" asserts that aromatization of androgens to estrogens in body fat should be associated with decreased hot flashes. Conversely, thermoregulatory models argue that body fat should be associated with increased hot flashes. The study objective was to examine associations between abdominal adiposity and hot flashes, including the role of reproductive hormones in these associations. The Study of Women's Health Across the Nation Heart Study (2001-2003) is an ancillary study to the Study of Women's Health Across the Nation, a community-based cohort study. Participants were 461 women (35% African American, 65% white) ages 45 to 58 years with an intact uterus and at least one ovary. Measures included a computed tomography scan to assess abdominal adiposity; reported hot flashes over the previous 2 weeks; and a blood sample for measurement of follicle-stimulating hormone, estradiol, and sex hormone-binding globulin-adjusted estradiol (free estradiol index). Associations were evaluated within multivariable logistic and linear regression models. Every 1-SD increase in total (odds ratio [OR]=1.28; 95% CI: 1.06-1.55) and subcutaneous (OR=1.30; 95% CI: 1.07-1.58) abdominal adiposity was associated with increased odds of hot flashes in age- and site-adjusted models. Visceral adiposity was not associated with hot flashes. Associations were not reduced when models included reproductive hormone concentrations. Increased abdominal adiposity, particularly subcutaneous adiposity, is associated with increased odds of hot flashes, favoring thermoregulatory models of hot flashes. Body fat may not protect women from hot flashes as once thought.

How well does WWLLN reproduce the satellite-observed distribution of flashes during the 2007-2012 time period?

NASA Astrophysics Data System (ADS)

Allen, D. J.; Pickering, K. E.; Ring, A.; Holzworth, R. H.

2013-12-01

Lightning is the dominant source of nitrogen oxides (NOx) involved in the production of ozone in the middle and upper troposphere in the tropics and in summer in the midlatitudes. Therefore it is imperative that the lightning NOx (LNOx) source strength per flash be better constrained. This process requires accurate information on the location and timing of lightning flashes. In the past fifteen years satellite-based lightning monitoring by the Optical Transient Detector (OTD) and Lightning Imaging Sensor (LIS) has greatly increased our understanding of the global distribution of lightning as a function of season and time-of-day. However, detailed information at higher temporal resolutions is only available for limited regions where ground-based networks such as the United States National Lightning Detection Network (NLDN) exist. In 2004, the ground-based World Wide Lightning Location Network (WWLLN) was formed with the goal of providing continuous flash rate information over the entire globe. It detects very low frequency (VLF) radio waves emitted by lightning with a detection efficiency (DE) that varies with stroke energy, time-of-day, surface type, and network coverage. This study evaluated the DE of WWLLN strokes relative to climatological OTD/LIS flashes using data from the 2007 to 2012 time period, a period during which the mean number of working sensors increased from 28 to 53. The analysis revealed that the mean global DE increased from 5% in 2007 to 13% in 2012. Regional variations were substantial with mean 2012 DEs of 5-10% over much of Argentina, Africa, and Asia and 15-30% over much of the Atlantic, Pacific, and Indian Oceans, the United States and the Maritime Continent. Detection-efficiency adjusted WWLLN flash rates were then compared to NLDN-based flash rates. Spatial correlations for individual summer months ranged from 0.66 to 0.93. Temporal correlations are currently being examined for regions of the U.S. and will also be shown.

A Temporal Locality-Aware Page-Mapped Flash Translation Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Youngjae; Gupta, Aayush; Urgaonkar, Bhuvan

2013-01-01

The poor performance of random writes has been a cause of major concern which needs to be addressed to better utilize the potential of flash in enterprise-scale environments. We examine one of the important causes of this poor performance: the design of the flash translation layer (FTL) which performs the virtual-to-physical address translations and hides the erase-before-write characteristics of flash. We propose a complete paradigm shift in the design of the core FTL engine from the existing techniques with our Demand-Based Flash Translation Layer (DFTL) which selectively caches page- level address mappings. Our experimental evaluation using FlashSim with realistic enterprise-scalemore » workloads endorses the utility of DFTL in enterprise-scale storage systems by demonstrating: 1) improved performance, 2) reduced garbage collection overhead and 3) better overload behavior compared with hybrid FTL schemes which are the most popular implementation methods. For example, a predominantly random-write dominant I/O trace from an OLTP application running at a large financial institution shows a 78% improvement in average response time (due to a 3-fold reduction in operations of the garbage collector), compared with the hybrid FTL scheme. Even for the well-known read-dominant TPC-H benchmark, for which DFTL introduces additional overheads, we improve system response time by 56%. Moreover, interestingly, when write-back cache on DFTL-based SSD is enabled, DFTL even outperforms the page-based FTL scheme, improving their response time by 72% in Financial trace.« less

FlaME: Flash Molecular Editor - a 2D structure input tool for the web

PubMed Central

2011-01-01

Background So far, there have been no Flash-based web tools available for chemical structure input. The authors herein present a feasibility study, aiming at the development of a compact and easy-to-use 2D structure editor, using Adobe's Flash technology and its programming language, ActionScript. As a reference model application from the Java world, we selected the Java Molecular Editor (JME). In this feasibility study, we made an attempt to realize a subset of JME's functionality in the Flash Molecular Editor (FlaME) utility. These basic capabilities are: structure input, editing and depiction of single molecules, data import and export in molfile format. Implementation The result of molecular diagram sketching in FlaME is accessible in V2000 molfile format. By integrating the molecular editor into a web page, its communication with the HTML elements on this page is established using the two JavaScript functions, getMol() and setMol(). In addition, structures can be copied to the system clipboard. Conclusion A first attempt was made to create a compact single-file application for 2D molecular structure input/editing on the web, based on Flash technology. With the application examples presented in this article, it could be demonstrated that the Flash methods are principally well-suited to provide the requisite communication between the Flash object (application) and the HTML elements on a web page, using JavaScript functions. PMID:21284863

FLASH Technology: Full-Scale Hospital Waste Water Treatments Adopted in Aceh

NASA Astrophysics Data System (ADS)

Rame; Tridecima, Adeodata; Pranoto, Hadi; Moesliem; Miftahuddin

2018-02-01

A Hospital waste water contains a complex mixture of hazardous chemicals and harmful microbes, which can pose a threat to the environment and public health. Some efforts have been carried out in Nangroe Aceh Darussalam (Aceh), Indonesia with the objective of treating hospital waste water effluents on-site before its discharge. Flash technology uses physical and biological pre-treatment, followed by advanced oxidation process based on catalytic ozonation and followed by GAC and PAC filtration. Flash Full-Scale Hospital waste water Treatments in Aceh from different district have been adopted and investigated. Referring to the removal efficiency of macro-pollutants, the collected data demonstrate good removal efficiency of macro-pollutants using Flash technologies. In general, Flash technologies could be considered a solution to the problem of managing hospital waste water.

Modeling experimental plasma diagnostics in the FLASH code: Thomson scattering

NASA Astrophysics Data System (ADS)

Weide, Klaus; Flocke, Norbert; Feister, Scott; Tzeferacos, Petros; Lamb, Donald

2017-10-01

Spectral analysis of the Thomson scattering of laser light sent into a plasma provides an experimental method to quantify plasma properties in laser-driven plasma experiments. We have implemented such a synthetic Thomson scattering diagnostic unit in the FLASH code, to emulate the probe-laser propagation, scattering and spectral detection. User-defined laser rays propagate into the FLASH simulation region and experience scattering (change in direction and frequency) based on plasma parameters. After scattering, the rays propagate out of the interaction region and are spectrally characterized. The diagnostic unit can be used either during a physics simulation or in post-processing of simulation results. FLASH is publicly available at flash.uchicago.edu. U.S. DOE NNSA, U.S. DOE NNSA ASC, U.S. DOE Office of Science and NSF.

Remote collection and analysis of witness reports on flash floods

NASA Astrophysics Data System (ADS)

Gourley, Jonathan; Erlingis, Jessica; Smith, Travis; Ortega, Kiel; Hong, Yang

2010-05-01

Typically, flash floods are studied ex post facto in response to a major impact event. A complement to field investigations is developing a detailed database of flash flood events, including minor events and null reports (i.e., where heavy rain occurred but there was no flash flooding), based on public survey questions conducted in near-real time. The Severe Hazards Analysis and Verification Experiment (SHAVE) has been in operation at the National Severe Storms Laboratory (NSSL) in Norman, OK, USA during the summers since 2006. The experiment employs undergraduate students to analyse real-time products from weather radars, target specific regions within the conterminous US, and poll public residences and businesses regarding the occurrence and severity of hail, wind, tornadoes, and now flash floods. In addition to providing a rich learning experience for students, SHAVE has been successful in creating high-resolution datasets of severe hazards used for algorithm and model verification. This talk describes the criteria used to initiate the flash flood survey, the specific questions asked and information entered to the database, and then provides an analysis of results for flash flood data collected during the summer of 2008. It is envisioned that specific details provided by the SHAVE flash flood observation database will complement databases collected by operational agencies and thus lead to better tools to predict the likelihood of flash floods and ultimately reduce their impacts on society.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

CoNNeCT Baseband Processor Module Boot Code SoftWare (BCSW)

NASA Technical Reports Server (NTRS)

Yamamoto, Clifford K.; Orozco, David S.; Byrne, D. J.; Allen, Steven J.; Sahasrabudhe, Adit; Lang, Minh

2012-01-01

This software provides essential startup and initialization routines for the CoNNeCT baseband processor module (BPM) hardware upon power-up. A command and data handling (C&DH) interface is provided via 1553 and diagnostic serial interfaces to invoke operational, reconfiguration, and test commands within the code. The BCSW has features unique to the hardware it is responsible for managing. In this case, the CoNNeCT BPM is configured with an updated CPU (Atmel AT697 SPARC processor) and a unique set of memory and I/O peripherals that require customized software to operate. These features include configuration of new AT697 registers, interfacing to a new HouseKeeper with a flash controller interface, a new dual Xilinx configuration/scrub interface, and an updated 1553 remote terminal (RT) core. The BCSW is intended to provide a "safe" mode for the BPM when initially powered on or when an unexpected trap occurs, causing the processor to reset. The BCSW allows the 1553 bus controller in the spacecraft or payload controller to operate the BPM over 1553 to upload code; upload Xilinx bit files; perform rudimentary tests; read, write, and copy the non-volatile flash memory; and configure the Xilinx interface. Commands also exist over 1553 to cause the CPU to jump or call a specified address to begin execution of user-supplied code. This may be in the form of a real-time operating system, test routine, or specific application code to run on the BPM.

Storm Physics and Lightning Properties over Northern Alabama during DC3

NASA Astrophysics Data System (ADS)

Matthee, R.; Carey, L. D.; Bain, A. L.

2013-12-01

The Deep Convective Clouds and Chemistry (DC3) experiment seeks to examine the relationship between deep moist convection (DMC) and the production of nitrogen oxides (NOx) via lightning (LNOx). The focus of this study will be to examine integrated storm microphysics and lightning properties of DMC across northern Alabama (NA) during the DC3 campaign through use of polarimetric radar [UAHuntsville's Advanced Radar for Meteorological and Operational Radar (ARMOR)] and lightning mapping [National Aeronautical and Space Administration's (NASA) north Alabama Lightning Mapping Array (NA LMA)] platforms. Specifically, ARMOR and NA LMA are being used to explore the ability of radar inferred microphysical (e.g., ice mass, graupel volume) measurements to parameterize flash rates (F) and flash area for estimation of LNOX production in cloud resolving models. The flash area was calculated by using the 'convex hull' method. This method essentially draws a polygon around all the sources that comprise a flash. From this polygon, the convex hull area that describes the minimum polygon that circumscribes the flash extent is calculated. Two storms have been analyzed so far; one on 21 May 2012 (S1) and another on 11 June 2012 (S2), both of which were aircraft-penetrated during DC3. For S1 and S2, radar reflectivity (Z) estimates of precipitation ice mass (M) within the mixed-phase zone (-10°C to -40°C) were well correlated to the trend of lightning flash rate. However, a useful radar-based F parameterization must provide accurate quantification of rates in addition to proper trends. The difference reflectivity was used to estimate Z associated with ice and then a single Z-M relation was employed to calculate M in the mixed-phase zone. Using this approach it was estimated that S1 produced an order of magnitude greater M, but produced about a third of the total amount of flashes compared to S2. Expectations based on the non-inductive charging (NIC) theory suggest that the M-to-F ratio (M/F) should be stable from storm-to-storm, amongst other factors, all else being equal. Further investigation revealed that the mean mixed-phase Z was 11 dB higher in S1 compared to S2, suggesting larger diameters and lower concentrations of ice particles in S1. Reduction by an order of magnitude of the intercept parameter (N0) of an assumed exponential ice particle size distribution within the Z-M relation for S1 resulted in a proportional reduction in S1's inferred M and therefore a more comparable M/F ratio between the storms. Flash statistics between S1 and S2 revealed the following: S1 produced 1.92 flashes/minute and a total of 102 flashes, while S2 produced 3.45 flashes/minute and a total of 307 flashes. On average, S1 (S2) produced 212 (78) sources per flash and an average flash area of 89.53 km2 (53.85 km2). Thus, S1 produced fewer flashes, a lower F, but more sources per flash and larger flash areas as compared to S2. Ongoing analysis is exploring the tuning of N0 within the Z-M relation by the mean Z in the mixed-phase zone. The suitability of various M estimates and other radar properties (graupel volume, ice fluxes, anvil ice mass) for parameterizing F, flash area and LNOX will be investigated on different storm types across NA.

Simulated CONUS Flash Flood Climatologies from Distributed Hydrologic Models

NASA Astrophysics Data System (ADS)

Flamig, Z.; Gourley, J. J.; Vergara, H. J.; Kirstetter, P. E.; Hong, Y.

2016-12-01

This study will describe a CONUS flash flood climatology created over the period from 2002 through 2011. The MRMS reanalysis precipitation dataset was used as forcing into the Ensemble Framework For Flash Flood Forecasting (EF5). This high resolution 1-sq km 5-minute dataset is ideal for simulating flash floods with a distributed hydrologic model. EF5 features multiple water balance components including SAC-SMA, CREST, and a hydrophobic model all coupled with kinematic wave routing. The EF5/SAC-SMA and EF5/CREST water balance schemes were used for the creation of dual flash flood climatologies based on the differing water balance principles. For the period from 2002 through 2011 the daily maximum streamflow, unit streamflow, and time of peak streamflow was stored along with the minimum soil moisture. These variables are used to describe the states of the soils right before a flash flood event and the peak streamflow that was simulated during the flash flood event. The results will be shown, compared and contrasted. The resulting model simulations will be verified on basins less than 1,000-sq km with USGS gauges to ensure the distributed hydrologic models are reliable. The results will also be compared spatially to Storm Data flash flood event observations to judge the degree of agreement between the simulated climatologies and observations.

Performance Evaluation of a Pose Estimation Method based on the SwissRanger SR4000

DTIC Science & Technology

2012-08-01

however, not suitable for navigating a small robot. Commercially available Flash LIDAR now has sufficient accuracy for robotic application. A...Flash LIDAR simultaneously produces intensity and range images of the scene at a video frame rate. It has the following advantages over stereovision...fully dense depth data across its field-of-view. The commercially available Flash LIDAR includes the SwissRanger [17] and TigerEye 3D [18

Distributed Mobile Device Based Shooter Detection Simulation

DTIC Science & Technology

2013-09-01

three signatures of a gunshot ( muzzle flash [optical], muzzle blast [auditory], and shock wave [auditory]), we focus only on information from the...bullet, while this proximity is important when using information from the shock wave. Detecting and using the muzzle flash would require accurate...Additionally, the mobile device would need to be aimed towards the blast to even have a chance detect the muzzle flash . 2.1 Single Microphone When a sound is

Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

NASA Technical Reports Server (NTRS)

MacLeod, Todd; Ho, Fat D.

2012-01-01

The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere with the satellite s primary mission.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

Shapes displayed with durations in the microsecond range do not obey Bloch's law of temporal summation

PubMed Central

Greene, Ernest; Ogden, R. Todd

2013-01-01

Shape patterns were displayed with simultaneous brief flashes from a light-emitting diode array. Flash durations in the microsecond range and luminous intensities were adjusted to vary the degree of successful shape recognition. Four experiments were conducted to test whether Bloch's law would apply in this task. Bloch's law holds that for very brief flashes the perceptual threshold is determined by the total number of photons being delivered, i.e., there is reciprocity of intensity and duration. The present results did not find that effectiveness of flashes was based on the total quantity of photons, as predicted by Bloch's law. Additionally, the evidence points to a visual mechanism that has ultra-high temporal precision that either registers the rate of photon flux or the duration of flashes. PMID:24349700

Transition from Target to Gaze Coding in Primate Frontal Eye Field during Memory Delay and Memory-Motor Transformation.

PubMed

Sajad, Amirsaman; Sadeh, Morteza; Yan, Xiaogang; Wang, Hongying; Crawford, John Douglas

2016-01-01

The frontal eye fields (FEFs) participate in both working memory and sensorimotor transformations for saccades, but their role in integrating these functions through time remains unclear. Here, we tracked FEF spatial codes through time using a novel analytic method applied to the classic memory-delay saccade task. Three-dimensional recordings of head-unrestrained gaze shifts were made in two monkeys trained to make gaze shifts toward briefly flashed targets after a variable delay (450-1500 ms). A preliminary analysis of visual and motor response fields in 74 FEF neurons eliminated most potential models for spatial coding at the neuron population level, as in our previous study (Sajad et al., 2015). We then focused on the spatiotemporal transition from an eye-centered target code (T; preferred in the visual response) to an eye-centered intended gaze position code (G; preferred in the movement response) during the memory delay interval. We treated neural population codes as a continuous spatiotemporal variable by dividing the space spanning T and G into intermediate T-G models and dividing the task into discrete steps through time. We found that FEF delay activity, especially in visuomovement cells, progressively transitions from T through intermediate T-G codes that approach, but do not reach, G. This was followed by a final discrete transition from these intermediate T-G delay codes to a "pure" G code in movement cells without delay activity. These results demonstrate that FEF activity undergoes a series of sensory-memory-motor transformations, including a dynamically evolving spatial memory signal and an imperfect memory-to-motor transformation.

TRMM-Based Lightning Climatology

NASA Technical Reports Server (NTRS)

Cecil, Daniel J.; Buechler, Dennis E.; Blakeslee, Richard J.

2011-01-01

Gridded climatologies of total lightning flash rates seen by the spaceborne Optical Transient Detector (OTD) and Lightning Imaging Sensor (LIS) have been updated. OTD collected data from May 1995 to March 2000. LIS data (equatorward of about 38 deg) has been added for 1998-2010. Flash counts from each instrument are scaled by the best available estimates of detection efficiency. The long LIS record makes the merged climatology most robust in the tropics and subtropics, while the high latitude data is entirely from OTD. The mean global flash rate from the merged climatology is 46 flashes per second. The peak annual flash rate at 0.5 deg scale is 160 fl/square km/yr in eastern Congo. The peak monthly average flash rate at 2.5 scale is 18 fl/square km/mo, from early April to early May in the Brahmaputra Valley of far eastern India. Lightning decreases in this region during the monsoon season, but increases further north and west. A monthly average peak from early August to early September in northern Pakistan also exceeds any monthly averages from Africa, despite central Africa having the greatest yearly average. Most continental regions away from the equator have an annual cycle with lightning flash rates peaking in late spring or summer. The main exceptions are India and southeast Asia, with springtime peaks in April and May. For landmasses near the equator, flash rates peak near the equinoxes. For many oceanic regions, the peak flash rates occur in autumn. This is particularly noticeable for the Mediterranean and North Atlantic. Landmasses have a strong diurnal cycle of lightning, with flash rates generally peaking between 3-5 pm local solar time. The central United States flash rates peak later, in late evening or early night. Flash rates peak after midnight in northern Argentina. These regions are known for large, intense, long-lived mesoscale convective systems.

Remote collection and analysis of witness reports on flash floods

NASA Astrophysics Data System (ADS)

Gourley, J. J.; Erlingis, J. M.; Smith, T. M.; Ortega, K. L.; Hong, Y.

2010-11-01

SummaryTypically, flash floods are studied ex post facto in response to a major impact event. A complement to field investigations is developing a detailed database of flash flood events, including minor events and null reports (i.e., where heavy rain occurred but there was no flash flooding), based on public survey questions conducted in near-real time. The Severe hazards analysis and verification experiment (SHAVE) has been in operation at the National Severe Storms Laboratory (NSSL) in Norman, OK, USA during the summers since 2006. The experiment employs undergraduate students to analyse real-time products from weather radars, target specific regions within the conterminous US, and poll public residences and businesses regarding the occurrence and severity of hail, wind, tornadoes, and now flash floods. In addition to providing a rich learning experience for students, SHAVE has also been successful in creating high-resolution datasets of severe hazards used for algorithm and model verification. This paper describes the criteria used to initiate the flash flood survey, the specific questions asked and information entered to the database, and then provides an analysis of results for flash flood data collected during the summer of 2008. It is envisioned that specific details provided by the SHAVE flash flood observation database will complement databases collected by operational agencies (i.e., US National Weather Service Storm Data reports) and thus lead to better tools to predict the likelihood of flash floods and ultimately reduce their impacts on society.

Mutational analysis of FLASH and PTPN13 genes in colorectal carcinomas.

PubMed

Jeong, Eun Goo; Lee, Sung Hak; Yoo, Nam Jin; Lee, Sug Hyung

2008-01-01

The Fas-Fas ligand system is considered a major pathway for induction of apoptosis in cells and tissues. FLASH was identified as a pro-apoptotic protein that transmits apoptosis signal during Fas-mediated apoptosis. PTPN13 interacts with Fas and functions as both suppressor and inducer of Fas-mediated apoptosis. There are polyadenine tracts in both FLASH (A8 and A9 in exon 8) and PTPN13 (A8 in exon 7) genes that could be frameshift mutation targets in colorectal carcinomas. Because genes encoding proteins in Fas-mediated apoptosis frequently harbor somatic mutations in cancers, we explored the possibility as to whether mutations of FLASH and PTPN13 are a feature of colorectal carcinomas. We analysed human FLASH in exon 8 and PTPN13 in exon 7 for the detection of somatic mutations in 103 colorectal carcinomas by a polymerase chain reaction (PCR)- based single-strand conformation polymorphism (SSCP). We detected two mutations in FLASH gene, but none in PTPN13 gene. However, the two mutations were not frameshift (deletion or insertion) mutations in the polyadenine tracts of FLASH. The two mutations consisted of a deletion mutation (c.3734-3737delAGAA) and a missense mutation (c.3703A>C). These data indicate that frameshift mutation in the polyadenine tracts in both FLASH and PTPN13 genes is rare in colorectal carcinomas. Also, the data suggest that both FLASH and PTPN13 mutations in the polyadenine tracts may not have a crucial role in the pathogenesis of colorectal carcinomas.

Differentiation of debris-flow and flash-flood deposits: implications for paleoflood investigations

USGS Publications Warehouse

Waythomas, Christopher F.; Jarrett, Robert D.; ,

1993-01-01

Debris flows and flash floods are common geomorphic processes in the Colorado Rocky Mountain Front Range and foothills. Usually, debris flows and flash floods are associated with excess summer rainfall or snowmelt, in areas were unconsolidated surficial deposits are relatively thick and slopes are steep. In the Front Range and foothills, flash flooding is limited to areas below about 2300m whereas, debris flow activity is common throughout the foothill and alpine zones and is not necessarily elevation limited. Because flash floods and debris flows transport large quantities of bouldery sediment, the resulting deposits appear somewhat similar even though such deposits were produced by different processes. Discharge estimates based on debris-flow deposits interpreted as flash-flood deposits have large errors because techniques for discharge retrodiction were developed for water floods with negligible sediment concentrations. Criteria for differentiating between debris-flow and flash-flood deposits are most useful for deposits that are fresh and well-exposed. However, with the passage of time, both debris-flow and flash-flood deposits become modified by the combined effects of weathering, colluviation, changes in surface morphology, and in some instances removal of interstitial sediment. As a result, some of the physical characteristics of the deposits become more alike. Criteria especially applicable to older deposits are needed. We differentiate flash-flood from debris-flow and other deposits using clast fabric measurements and other morphologic and sedimentologic techniques (e.g., deposit morphology, clast lithology, particle size and shape, geomorphic setting).

Cloud-to-ground lightning in tropical cyclones: A study of Hurricanes Hugo (1989) and Jerry (1989)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samsury, C.E.; Orville, R.E.

1994-08-01

Cloud-to-ground lightning characteristics of two Atlantic tropical cyclones of 1989, Hurricanes Hugo and Jerry, are presented. Statistics on the number of flashes, location, polarity, peak currents, and multiplicity (number of strokes per flash) are examined in an 18-h period divided into prelandfall and postlandfall categories. Land-based and aircraft lower fuselage radar data are also analyzed to determine the nature of the precipitation in which lightning is detected. Jerry is found to be more electrically active than Hugo, with 691 flashes detected compared with 33 flashes for Hugo. The majority of these flashes, regardless of the polarity, are located in themore » right front and right rear quadrants of the hurricanes, almost exclusively in outer convective rainbands. One reason for the large difference in the number of flashes between the two storms is the presence of many convective rainbands in Jerry, compared to only a few in Hugo. More than 20% of the flashes in each storm have a positive polarity. Median negative peak currents of the first return strokes are 49 kA in Hugo and 40 kA in Jerry. Median positive peak currents are 65 kA in Hugo and 52 kA in Jerry. The mean multiplicity of the negative flashes is 1.7 in Hugo and 2.6 in Jerry. Twenty percent of the negative flashes detected in Jerry have a multiplicity of 4 or higher.« less

Flash Radiographic Studies of Hypervelocity Projectile Interactions with Explosives

DTIC Science & Technology

1992-07-01

radiography . Explosive/metal target assemblies were designed to be representative of various aspects of explosive filled ordnance or components. The...with Explosives 1. Introduction Flash radiography (flash X-ray) is an effective instrumentation technique that can be used to record ultra high speed...firing chamber and provide a stable mount for the X-ray tubehead. i_ 11 611 Fmim A \\.\\\\ / \\,\\\\ // "-.. .•\\ /i--" " "’ ’i Xray source ColliatorBase X-ray

GLM Validation Studies in Colorado

NASA Astrophysics Data System (ADS)

Rutledge, S. A.; Reimel, K.; Fuchs, B.; Xu, W.

2017-12-01

On 8 May 2017 the Geostationary Lightning Mapper (GLM) calibration/validation field campaign completed a mission over the domain of the Colorado Lightning Mapping Array (LMA). This "gold mine day" produced a mixture of normal polarity and anomalous storms of varying intensity. A case study analysis has been completed for a portion of three individual storms from this day. By utilizing a cell tracking algorithm and lightning flash attribution program, individual lightning flashes detected by the GLM, LMA, the National Lightning Detection Network (NLDN), and Earth Networks Total Lightning Network (ENTLN) are attributed to individual storm cells. The focus of this analysis is the detection efficiency of GLM. We will discuss how the GLM detection efficiency changes as a result of storm morphology and lightning flash characteristics. Lightning flash size, flash height, and the amount of ice present between the lightning flash altitude and the top of the cloud all appear to play a role in how well GLM detects lightning flashes. Since GLM shares the same concept as its predecessor TRMM LIS (optically-based lightning detection), the evaluation of TRMM LIS against LMA network-detected lightning provides insights into the GLM detection efficiency. We have collected observations by LIS and LMA coincident in time and space during 2008-2014. The sample includes 400 LIS overpasses with both LIS and LMA detecting flashes within 150 km radius of the center of the LMA array during the 120 second LIS observing time period (analysis presently confined to the Alabama LMA network). The overall LIS detection efficiency (DE, defined as the ratio of flash rates between LIS and LMA) is 0.45, with higher DE for lower flash rate cases. LIS showed a DE of nearly 100% for cases with flash rates < 10 fl/min, but had a DE of only 20-30% for high flash rates within intense storms (> 300 fl/min). We further separated the dataset into day and night, and found that the night-time DE (0.6) increased by 20% compared to day-time DE (0.5). LIS DE also increased as a function of LMA-derived flash size, possibly due to stronger radiance from larger flashes. LIS DE was the lowest ( 40%) for flashes with sizes smaller than a single LIS pixel (< 16 km2). These results may be applicable to GLM as well.

A microcomputer-based data acquisition system for ECG, body and ambient temperatures measurement during bathing.

PubMed

Uokawa, Y; Yonezawa, Y; Caldwell, W M; Hahn, A W

2000-01-01

A data acquisition system employing a low power 8 bit microcomputer has been developed for heart rate variability monitoring before, during and after bathing. The system consists of three integral chest electrodes, two temperature sensors, an instrumentation amplifier, a low power 8-bit single chip microcomputer (SMC) and a 4 MB compact flash memory (CFM). The ECG from the electrodes is converted to an 8-bit digital format at a 1 ms rate by an A/D converter in the SMC. Both signals from the body and ambient temperature sensors are converted to an 8-bit digital format every 1 second. These data are stored by the CFM. The system is powered by a rechargeable 3.6 V lithium battery. The 4 x 11 x 1 cm system is encapsulated in epoxy and silicone, yielding a total volume of 44 cc. The weight is 100 g.

A multiparameter wearable physiologic monitoring system for space and terrestrial applications

NASA Technical Reports Server (NTRS)

Mundt, Carsten W.; Montgomery, Kevin N.; Udoh, Usen E.; Barker, Valerie N.; Thonier, Guillaume C.; Tellier, Arnaud M.; Ricks, Robert D.; Darling, Robert B.; Cagle, Yvonne D.; Cabrol, Nathalie A.;

Evaluating automatic attentional capture by self-relevant information.

PubMed

Ocampo, Brenda; Kahan, Todd A

2016-01-01

Our everyday decisions and memories are inadvertently influenced by self-relevant information. For example, we are faster and more accurate at making perceptual judgments about stimuli associated with ourselves, such as our own face or name, as compared with familiar non-self-relevant stimuli. Humphreys and Sui propose a "self-attention network" to account for these effects, wherein self-relevant stimuli automatically capture our attention and subsequently enhance the perceptual processing of self-relevant information. We propose that the masked priming paradigm and continuous flash suppression represent two ways to experimentally examine these controversial claims.

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

NASA Technical Reports Server (NTRS)

Campola, Michael; Wyrwas, Edward

2017-01-01

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.

Establishing a rainfall threshold for flash flood warnings based on the DFFG method in Yunnan province, China

NASA Astrophysics Data System (ADS)

Ma, M.; Wang, H.; Chen, Y.; Tang, G.; Hong, Z.; Zhang, K.; Hong, Y.

2017-12-01

Flash floods, one of the deadliest natural hazards worldwide due to their multidisciplinary nature, rank highly in terms of heavy damage and casualties. Such as in the United States, flash flood is the No.1 cause of death and the No. 2 most deadly weather-related hazard among all storm-related hazards, with approximately 100 lives lost each year. According to China Floods and Droughts Disasters Bullet in 2015 (http://www.mwr.gov.cn/zwzc/hygb/zgshzhgb), about 935 deaths per year on average were caused by flash floods from 2000 to 2015, accounting for 73 % of the fatalities due to floods. Therefore, significant efforts have been made toward understanding flash flood processes as well as modeling and forecasting them, it still remains challenging because of their short response time and limited monitoring capacity. This study advances the use of high-resolution Global Precipitation Measurement forecasts (GPMs), disaster data obtained from the government officials in 2011 and 2016, and the improved Distributed Flash Flood Guidance (DFFG) method combining the Distributed Hydrologic Model and Soil Conservation Service Curve Numbers. The objectives of this paper are (1) to examines changes in flash flood occurrence, (2) to estimate the effect of the rainfall spatial variability ,(2) to improve the lead time in flash floods warning and get the rainfall threshold, (3) to assess the DFFG method applicability in Dongchuan catchments, and (4) to yield the probabilistic information about the forecast hydrologic response that accounts for the locational uncertainties of the GPMs. Results indicate: (1) flash flood occurrence increased in the study region, (2) the occurrence of predicted flash floods show high sensitivity to total infiltration and soil water content, (3) the DFFG method is generally capable of making accurate predictions of flash flood events in terms of their locations and time of occurrence, and (4) the accumulative rainfall over a certain time span is an appropriate threshold for flash flood warnings. Finally, the article highlights the importance of accurately simulating the hydrological processes and high-resolution satellite rainfall data on the accurate forecasting of rainfall triggered flash flood events.

Severe storm electricity

NASA Technical Reports Server (NTRS)

Rust, W. D.; Macgorman, D. R.; Taylor, W.; Arnold, R. T.

1984-01-01

Severe storms and lightning were measured with a NASA U2 and ground based facilities, both fixed base and mobile. Aspects of this program are reported. The following results are presented: (1) ground truth measurements of lightning for comparison with those obtained by the U2. These measurements include flash type identification, electric field changes, optical waveforms, and ground strike location; (2) simultaneous extremely low frequency (ELF) waveforms for cloud to ground (CG) flashes; (3) the CG strike location system (LLP) using a combination of mobile laboratory and television video data are assessed; (4) continued development of analog-to-digital conversion techniques for processing lightning data from the U2, mobile laboratory, and NSSL sensors; (5) completion of an all azimuth TV system for CG ground truth; (6) a preliminary analysis of both IC and CG lightning in a mesocyclone; and (7) the finding of a bimodal peak in altitude lightning activity in some storms in the Great Plains and on the east coast. In the forms on the Great Plains, there was a distinct class of flash what forms the upper mode of the distribution. These flashes are smaller horizontal extent, but occur more frequently than flashes in the lower mode of the distribution.

Sternal skin conductance: a reasonable surrogate for hot flash measurement?

PubMed

Pachman, Deirdre R; Loprinzi, Charles L; Novotny, Paul J; Satele, Daniel V; Linquist, Breanna M; Wolf, Sherry; Barton, Debra L

2013-11-01

This study aims to examine the accuracy of a new sternal skin conductance (SSC) device in measuring hot flashes and to assess the acceptability of the device by women. Three small descriptive pilot studies were performed using two sequential prototypes of the SSC device developed by an engineering device company in the Midwest. The devices were worn either in a monitored setting for 24 hours or in an ambulatory setting for 5 weeks. During the study period, women recorded hot flashes in a prospective hot flash diary and answered questions about the acceptability of wearing the SSC device. The first prototype was not able to collect any analyzable skin conductance data owing to various malfunction issues, including poor conductance and battery failure. However, 16 women wore the device for 5 weeks and reported that wearing the device was acceptable, although 31% stated that it interfered with daily activities. Hot flash data from the second prototype revealed a 24% concordance rate between self-reported and device-recorded hot flashes. Findings from these studies support discordance between device-recorded and self-reported hot flashes. In addition, the studies reveal further limitations of SSC monitoring, including difficulties with data collection and lack of consistency in interpretation. Based on these results and other recent trials identifying issues with SSC methodology, it is time to find a better physiologic surrogate measure for hot flashes.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Non-invasive online wavelength measurements at FLASH2 and present benchmark

PubMed Central

Braune, Markus; Buck, Jens; Kuhlmann, Marion; Grunewald, Sören; Düsterer, Stefan; Viefhaus, Jens; Tiedtke, Kai

2018-01-01

At FLASH2, the free-electron laser radiation wavelength is routinely measured by an online spectrometer based on photoionization of gas targets. Photoelectrons are detected with time-of-flight spectrometers and the wavelength is determined by means of well known binding energies of the target species. The wavelength measurement is non-invasive and transparent with respect to running user experiments due to the low gas pressure applied. Sophisticated controls for setting the OPIS operation parameters have been created and integrated into the distributed object-oriented control system at FLASH2. Raw and processed data can be stored on request in the FLASH data acquisition system for later correlation with data from user experiments or re-analysis. In this paper, the commissioning of the instrument at FLASH2 and the challenges of space charge effects on wavelength determination are reported. Furthermore, strategies for fast data reduction and online data processing are presented. PMID:29271744

Fast uncooled module 32×32 array of polycrystalline PbSe used for muzzle flash detection

NASA Astrophysics Data System (ADS)

Kastek, Mariusz; Dulski, Rafał; Trzaskawka, Piotr; Bieszczad, Grzegorz

2011-06-01

The paper presents some aspects of muzzle flash detection using low resolution polycrystalline PbSe uncooled 32×32 detectors array. This system for muzzle flash detection works in MWIR (3 - 5 microns) region and it is based on VPD (Vapor Phase Deposition) technology. The low density uncooled 32×32 array is suitable for being used in low cost IR imagers sensitive in the MWIR band with frame rates exceeding 1.000 Hz. The FPA detector, read-out electronics and processing electronics (allowing the implementation of some algorithms for muzzle flash detection) has been presented. The system has been tested at field test ground. Results of detection range measurement with two types of optical systems (wide and narrow field of view) have been shown. The initial results of testing of some algorithms for muzzle flash detection have been also presented.

Flash Flood Trail near Parras, Coahuila, Mexico

NASA Image and Video Library

1991-12-01

Evidence of a recent flash flood can be seen in the form of light brown sediment that flowed down gullies and mountain sides forming ponds of debris over agricultural areas in the broad valley near the town of Parras (26.5N, 102.5W). This part of Mexico has extensive vineyards, orchards and both dry land and irrigated agriculture. Based on the photo, it appears that flash flood waters damaged some 300 square miles of property in this area alone.

Flash Flood Trail near Parras, Coahuila, Mexico

NASA Technical Reports Server (NTRS)

1991-01-01

Evidence of a recent flash flood can be seen in the form of light brown sediment that flowed down gullies and mountain sides forming ponds of debris over agricultural areas in the broad valley near the town of Parras (26.5N, 102.5W). This part of Mexico has extensive vineyards, orchards and both dry land and irrigated agriculture. Based on the photo, it appears that flash flood waters damaged some 300 square miles of property in this area alone.

A Study and Taxonomy of Vulnerabilities in Web Based Animation and Interactivity Software

DTIC Science & Technology

2010-12-01

Flash Player is available as a plugin for most common Web browsers (Firefox, Mozilla, Netscape, Opera) and as an ActiveX control for Internet...script or HTML via (1) a swf file that uses the asfunction: protocol or (2) the navigateToURL function when used with the Flash Player ActiveX ...malicious page or open a malicious file. 2. Coding an Exploit The specific flaw exists in the Flash Player ActiveX Control’s handling of the

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Additions and improvements to the high energy density physics capabilities in the FLASH code

NASA Astrophysics Data System (ADS)

Lamb, D. Q.; Flocke, N.; Graziani, C.; Tzeferacos, P.; Weide, K.

2016-10-01

FLASH is an open source, finite-volume Eulerian, spatially adaptive radiation magnetohydrodynamics code that has the capabilities to treat a broad range of physical processes. FLASH performs well on a wide range of computer architectures, and has a broad user base. Extensive high energy density physics (HEDP) capabilities have been added to FLASH to make it an open toolset for the academic HEDP community. We summarize these capabilities, emphasizing recent additions and improvements. In particular, we showcase the ability of FLASH to simulate the Faraday Rotation Measure produced by the presence of magnetic fields; and proton radiography, proton self-emission, and Thomson scattering diagnostics with and without the presence of magnetic fields. We also describe several collaborations with the academic HEDP community in which FLASH simulations were used to design and interpret HEDP experiments. This work was supported in part at the University of Chicago by the DOE NNSA ASC through the Argonne Institute for Computing in Science under field work proposal 57789; and the NSF under Grant PHY-0903997.

Environmental Effects on Data Retention in Flash Cells

NASA Technical Reports Server (NTRS)

Katz, Rich; Flowers, David; Bergevin, Keith

2017-01-01

Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Antifuse technology, prevalent in non-volatile field programmable gate arrays (FPGAs), will eventually be phased out as new devices have not been developed for approximately a decade. The reliance on flash technology presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. This paper will present the results of our on-going tests: long-term storage at 150 C for a small population of devices, neutron radiation exposure, electrostatic discharge (ESD) testing, and the trends of large populations (over 300 devices for each condition) exposed to three difference temperatures: 25 C, 125 C, and 150 C.

Flash chemistry: flow chemistry that cannot be done in batch.

PubMed

Yoshida, Jun-ichi; Takahashi, Yusuke; Nagaki, Aiichiro

2013-11-04

Flash chemistry based on high-resolution reaction time control using flow microreactors enables chemical reactions that cannot be done in batch and serves as a powerful tool for laboratory synthesis of organic compounds and for production in chemical and pharmaceutical industries.

The opportunity and challenge of spin coat based nanoimprint lithography

NASA Astrophysics Data System (ADS)

Jung, Wooyung; Cho, Jungbin; Choi, Eunhyuk; Lim, Yonghyun; Bok, Cheolkyu; Tsuji, Masatoshi; Kobayashi, Kei; Kono, Takuya; Nakasugi, Tetsuro

2017-03-01

Since multi patterning with spacer was introduced in NAND flash memory1, multi patterning with spacer has been a promising solution to overcome the resolution limit. However, the increase in process cost of multi patterning with spacer must be a serious burden to device manufacturers as half pitch of patterns gets smaller.2, 3 Even though Nano Imprint Lithography (NIL) has been considered as one of strong candidates to avoid cost issue of multi patterning with spacer, there are still negative viewpoints; template damage induced from particles between template and wafer, overlay degradation induced from shear force between template and wafer, and throughput loss induced from dispensing and spreading resist droplet. Jet and Flash Imprint Lithography (J-FIL4, 5, 6) has contributed to throughput improvement, but still has these above problems. J-FIL consists of 5 steps; dispense of resist droplets on wafer, imprinting template on wafer, filling the gap between template and wafer with resist, UV curing, and separation of template from wafer. If dispensing resist droplets by inkjet is replaced with coating resist at spin coater, additional progress in NIL can be achieved. Template damage from particle can be suppressed by thick resist which is spin-coated at spin coater and covers most of particles on wafer, shear force between template and wafer can be minimized with thick resist, and finally additional throughput enhancement can be achieved by skipping dispense of resist droplets on wafer. On the other hand, spin-coat-based NIL has side effect such as pattern collapse which comes from high separation energy of resist. It is expected that pattern collapse can be improved by the development of resist with low separation energy.

Lightning Evolution In Two North Central Florida Summer Multicell Storms and Three Winter/Spring Frontal Storms

NASA Astrophysics Data System (ADS)

Caicedo, J. A.; Uman, M. A.; Pilkey, J. T.

2018-01-01

We present the first lightning evolution studies, via the Lightning Mapping Array (LMA) and radar, performed in North Central Florida. Parts of three winter/spring frontal storms (cold season) and two complete summer (warm season) multicell storms are studied. Storm parameters measured are as follows: total number of flashes, flash-type classification, first flashes, flash initiation altitude, flash initiation power, flash rate (flashes per minute), charge structure, altitude and temperature ranges of the inferred charge regions, atmospheric isotherm altitude, radar base reflectivity (dBZ), and radar echo tops (EET). Several differences were found between summer multicell and winter/spring frontal storms in North Central Florida: (1) in winter/spring storms, the range of altitudes that all charge regions occupy is up to 1 km lower in altitude than in summer storms, as are the 0°C, -10°C, and -20°C isotherms; (2) lightning activity in summer storms is highly correlated with changes in radar signatures, in particular, echo tops; and (3) the LMA average initiation power of all flash types in winter/frontal storms is about an order of magnitude larger than that for summer storms. In relation to storms in other geographical locations, North Central Florida seasonal storms were found to have similarities in most parameters studied with a few differences, examples in Florida being (1) colder initiation altitudes for intracloud flashes, (2) charge regions occupying larger ranges of atmospheric temperatures, and (3) winter/spring frontal storms not having much lightning activity in the stratiform region.

Fluorescence Lyman-Alpha Stratospheric Hygrometer (FLASH): application on meteorological balloons, long duration balloons and unmanned aerial vehicles.

NASA Astrophysics Data System (ADS)

Lykov, Alexey; Khaykin, Sergey; Yushkov, Vladimir; Efremov, Denis; Formanyuk, Ivan; Astakhov, Valeriy

The FLASH instrument is based on the fluorescent method, which uses H2O molecules photodissociation at a wavelength lambda=121.6 nm (Lalpha - hydrogen emission) followed by the measurement of the fluorescence of excited OH radicals. The source of Lyman-alpha radiation is a hydrogen discharge lamp while the detector of OH fluorescence at 308 -316 nm is a photomultiplier run in photon counting mode. The intensity of the fluorescent light as well as the instrument readings is directly proportional to the water vapor mixing ratio under stratospheric conditions with negligible oxygen absorption. Initially designed for rocket-borne application, FLASH has evolved into a light-weight balloon sonde (FLASH-B) for measurements in the upper troposphere and stratosphere on board meteorological and small plastic balloons. This configuration has been used in over 100 soundings at numerous tropical mid-latitude and polar locations within various international field campaigns. An airborne version of FLASH instrument is successfully utilized onboard stratospheric M55-Geophysica aircraft and tropospheric airborne laboratory YAK42-Roshydromet. The hygrometer was modified for application onboard stratospheric long-duration balloons (FLASH-LDB version). This version was successfully used onboard CNES super-pressure balloon launched from SSC Esrange in March 2007 and flown during 10 days. Special design for polar long duration balloon PoGOLite was created for testing work during polar day in June 2013. Installation and measurement peculiarities as well as observational results are presented. Observations of water vapour using FLASH-B instrument, being of high quality are rather costly as the payload recovery is often complicated and most of the time impossible. Following the goal to find a cost-efficient solution, FLASH was adapted for use onboard Unmanned Aerial Vehicles (UAV). This solution was only possible thanks to compactness and light-weight (0.5 kg) of FLASH instrument. The hygrometer was installed at the nose of a small GPS-controlled glider, which was lifted by a meteorological balloon into the stratosphere and released by a remote command. GPS-based flight control guides and lands the UAV at the launch point thereby allowing multiple usage of its payload. Another sounding platform allowing for multiple usage of the FLASH instrument is a GPS-guided paraglide. The results of measurements acquired in the test flights using different types of balloon-lifted UAVs are presented.

Reduction in menopause-related symptoms associated with use of a noninvasive neurotechnology for autocalibration of neural oscillations.

PubMed

Tegeler, Charles H; Tegeler, Catherine L; Cook, Jared F; Lee, Sung W; Pajewski, Nicholas M

2015-06-01

Increased amplitudes in high-frequency brain electrical activity are reported with menopausal hot flashes. We report outcomes associated with the use of High-resolution, relational, resonance-based, electroencephalic mirroring--a noninvasive neurotechnology for autocalibration of neural oscillations--by women with perimenopausal and postmenopausal hot flashes. Twelve women with hot flashes (median age, 56 y; range, 46-69 y) underwent a median of 13 (range, 8-23) intervention sessions for a median of 9.5 days (range, 4-32). This intervention uses algorithmic analysis of brain electrical activity and near real-time translation of brain frequencies into variable tones for acoustic stimulation. Hot flash frequency and severity were recorded by daily diary. Primary outcomes included hot flash severity score, sleep, and depressive symptoms. High-frequency amplitudes (23-36 Hz) from bilateral temporal scalp recordings were measured at baseline and during serial sessions. Self-reported symptom inventories for sleep and depressive symptoms were collected. The median change in hot flash severity score was -0.97 (range, -3.00 to 1.00; P = 0.015). Sleep and depression scores decreased by -8.5 points (range, -20 to -1; P = 0.022) and -5.5 points (range, -32 to 8; P = 0.015), respectively. The median sum of amplitudes for the right and left temporal high-frequency brain electrical activity was 8.44 μV (range, 6.27-16.66) at baseline and decreased by a median of -2.96 μV (range, -11.05 to -0.65; P = 0.0005) by the final session. Hot flash frequency and severity, symptoms of insomnia and depression, and temporal high-frequency brain electrical activity decrease after High-resolution, relational, resonance-based, electroencephalic mirroring. Larger controlled trials with longer follow-up are warranted.

Understanding processes that generate flash floods in the arid Judean Desert to the Dead Sea - a measurement network

NASA Astrophysics Data System (ADS)

Hennig, Hanna; Rödiger, Tino; Laronne, Jonathan B.; Geyer, Stefan; Merz, Ralf

2016-04-01

Flash floods in (semi-) arid regions are fascinating in their suddenness and can be harmful for humans, infrastructure, industry and tourism. Generated within minutes, an early warning system is essential. A hydrological model is required to quantify flash floods. Current models to predict flash floods are often based on simplified concepts and/or on concepts which were developed for humid regions. To more closely relate such models to local conditions, processes within catchments where flash floods occur require consideration. In this study we present a monitoring approach to decipher different flash flood generating processes in the ephemeral Wadi Arugot on the western side of the Dead Sea. To understand rainfall input a dense rain gauge network was installed. Locations of rain gauges were chosen based on land use, slope and soil cover. The spatiotemporal variation of rain intensity will also be available from radar backscatter. Level pressure sensors located at the outlet of major tributaries have been deployed to analyze in which part of the catchment water is generated. To identify the importance of soil moisture preconditions, two cosmic ray sensors have been deployed. At the outlet of the Arugot water is sampled and level is monitored. To more accurately determine water discharge, water velocity is measured using portable radar velocimetry. A first analysis of flash flood processes will be presented following the FLEX-Topo concept .(Savenije, 2010), where each landscape type is represented using an individual hydrological model according to the processes within the three hydrological response units: plateau, desert and outlet. References: Savenije, H. H. G.: HESS Opinions "Topography driven conceptual modelling (FLEX-Topo)", Hydrol. Earth Syst. Sci., 14, 2681-2692, doi:10.5194/hess-14-2681-2010, 2010.

High-level context effects on spatial displacement: the effects of body orientation and language on memory

PubMed Central

Vinson, David W.; Abney, Drew H.; Dale, Rick; Matlock, Teenie

2014-01-01

Three decades of research suggests that cognitive simulation of motion is involved in the comprehension of object location, bodily configuration, and linguistic meaning. For example, the remembered location of an object associated with actual or implied motion is typically displaced in the direction of motion. In this paper, two experiments explore context effects in spatial displacement. They provide a novel approach to estimating the remembered location of an implied motion image by employing a cursor-positioning task. Both experiments examine how the remembered spatial location of a person is influenced by subtle differences in implied motion, specifically, by shifting the orientation of the person’s body to face upward or downward, and by pairing the image with motion language that differed on intentionality, fell versus jumped. The results of Experiment 1, a survey-based experiment, suggest that language and body orientation influenced vertical spatial displacement. Results of Experiment 2, a task that used Adobe Flash and Amazon Mechanical Turk, showed consistent effects of body orientation on vertical spatial displacement but no effect of language. Our findings are in line with previous work on spatial displacement that uses a cursor-positioning task with implied motion stimuli. We discuss how different ways of simulating motion can influence spatial memory. PMID:25071628

High-level context effects on spatial displacement: the effects of body orientation and language on memory.

PubMed

Vinson, David W; Abney, Drew H; Dale, Rick; Matlock, Teenie

2014-01-01

Three decades of research suggests that cognitive simulation of motion is involved in the comprehension of object location, bodily configuration, and linguistic meaning. For example, the remembered location of an object associated with actual or implied motion is typically displaced in the direction of motion. In this paper, two experiments explore context effects in spatial displacement. They provide a novel approach to estimating the remembered location of an implied motion image by employing a cursor-positioning task. Both experiments examine how the remembered spatial location of a person is influenced by subtle differences in implied motion, specifically, by shifting the orientation of the person's body to face upward or downward, and by pairing the image with motion language that differed on intentionality, fell versus jumped. The results of Experiment 1, a survey-based experiment, suggest that language and body orientation influenced vertical spatial displacement. Results of Experiment 2, a task that used Adobe Flash and Amazon Mechanical Turk, showed consistent effects of body orientation on vertical spatial displacement but no effect of language. Our findings are in line with previous work on spatial displacement that uses a cursor-positioning task with implied motion stimuli. We discuss how different ways of simulating motion can influence spatial memory.

Sensory dominance and multisensory integration as screening tools in aging.

PubMed

Murray, Micah M; Eardley, Alison F; Edginton, Trudi; Oyekan, Rebecca; Smyth, Emily; Matusz, Pawel J

2018-06-11

Multisensory information typically confers neural and behavioural advantages over unisensory information. We used a simple audio-visual detection task to compare healthy young (HY), healthy older (HO) and mild-cognitive impairment (MCI) individuals. Neuropsychological tests assessed individuals' learning and memory impairments. First, we provide much-needed clarification regarding the presence of enhanced multisensory benefits in both healthily and abnormally aging individuals. The pattern of sensory dominance shifted with healthy and abnormal aging to favour a propensity of auditory-dominant behaviour (i.e., detecting sounds faster than flashes). Notably, multisensory benefits were larger only in healthy older than younger individuals who were also visually-dominant. Second, we demonstrate that the multisensory detection task offers benefits as a time- and resource-economic MCI screening tool. Receiver operating characteristic (ROC) analysis demonstrated that MCI diagnosis could be reliably achieved based on the combination of indices of multisensory integration together with indices of sensory dominance. Our findings showcase the importance of sensory profiles in determining multisensory benefits in healthy and abnormal aging. Crucially, our findings open an exciting possibility for multisensory detection tasks to be used as a cost-effective screening tool. These findings clarify relationships between multisensory and memory functions in aging, while offering new avenues for improved dementia diagnostics.

Status of climacteric symptoms among middle-aged to elderly Japanese women: comparison of general healthy women with women presenting at a menopausal clinic.

PubMed

Ikeda, Toshiyuki; Makita, Kazuya; Ishitani, Ken; Takamatsu, Kiyoshi; Horiguchi, Fumi; Nozawa, Shiro

2005-04-01

To examine the status and characteristics of climacteric symptoms reported by generally healthy middle-aged to elderly women in Japan, those living in Saitama Prefecture were surveyed . The subjects comprised 398 women ranging in age from 40 to <60 years (mean age, 50.5 years). Climacteric symptoms were objectively assessed using the Keio questionnaire. The total scores obtained for the 40 symptoms were used to calculate symptom prevalence and severity. (i) The most frequent symptom was poor memory, reported by 88.7% of the women. (ii) Lumbar-sacral back pain was rated as a severe symptom by the highest percentage of women (15.3%). (iii) The prevalence and severity of poor memory and lumbar-sacral back pain did not differ with menopausal status. (iv) Hot flashes and sweats were slightly higher in peri- and early postmenopausal women than in premenopausal women. The present study showed that healthy women who do not consult physicians because of climacteric symptoms are primarily concerned with age-related symptoms, such as poor memory, loss of hair, and forgetfulness.

Prospective memory in an air traffic control simulation: External aids that signal when to act

PubMed Central

Loft, Shayne; Smith, Rebekah E.; Bhaskara, Adella

2011-01-01

At work and in our personal life we often need to remember to perform intended actions at some point in the future, referred to as Prospective Memory. Individuals sometimes forget to perform intentions in safety-critical work contexts. Holding intentions can also interfere with ongoing tasks. We applied theories and methods from the experimental literature to test the effectiveness of external aids in reducing prospective memory error and costs to ongoing tasks in an air traffic control simulation. Participants were trained to accept and hand-off aircraft, and to detect aircraft conflicts. For the prospective memory task participants were required to substitute alternative actions for routine actions when accepting target aircraft. Across two experiments, external display aids were provided that presented the details of target aircraft and associated intended actions. We predicted that aids would only be effective if they provided information that was diagnostic of target occurrence and in this study we examined the utility of aids that directly cued participants when to allocate attention to the prospective memory task. When aids were set to flash when the prospective memory target aircraft needed to be accepted, prospective memory error and costs to ongoing tasks of aircraft acceptance and conflict detection were reduced. In contrast, aids that did not alert participants specifically when the target aircraft were present provided no advantage compared to when no aids we used. These findings have practical implications for the potential relative utility of automated external aids for occupations where individuals monitor multi-item dynamic displays. PMID:21443381

Prospective memory in an air traffic control simulation: external aids that signal when to act.

PubMed

Loft, Shayne; Smith, Rebekah E; Bhaskara, Adella

2011-03-01

At work and in our personal life we often need to remember to perform intended actions at some point in the future, referred to as Prospective Memory. Individuals sometimes forget to perform intentions in safety-critical work contexts. Holding intentions can also interfere with ongoing tasks. We applied theories and methods from the experimental literature to test the effectiveness of external aids in reducing prospective memory error and costs to ongoing tasks in an air traffic control simulation. Participants were trained to accept and hand-off aircraft and to detect aircraft conflicts. For the prospective memory task, participants were required to substitute alternative actions for routine actions when accepting target aircraft. Across two experiments, external display aids were provided that presented the details of target aircraft and associated intended actions. We predicted that aids would only be effective if they provided information that was diagnostic of target occurrence, and in this study, we examined the utility of aids that directly cued participants when to allocate attention to the prospective memory task. When aids were set to flash when the prospective memory target aircraft needed to be accepted, prospective memory error and costs to ongoing tasks of aircraft acceptance and conflict detection were reduced. In contrast, aids that did not alert participants specifically when the target aircraft were present provided no advantage compared to when no aids were used. These findings have practical implications for the potential relative utility of automated external aids for occupations where individuals monitor multi-item dynamic displays.

Additions and improvements to the high energy density physics capabilities in the FLASH code

NASA Astrophysics Data System (ADS)

Lamb, D.; Bogale, A.; Feister, S.; Flocke, N.; Graziani, C.; Khiar, B.; Laune, J.; Tzeferacos, P.; Walker, C.; Weide, K.

2017-10-01

FLASH is an open-source, finite-volume Eulerian, spatially-adaptive radiation magnetohydrodynamics code that has the capabilities to treat a broad range of physical processes. FLASH performs well on a wide range of computer architectures, and has a broad user base. Extensive high energy density physics (HEDP) capabilities exist in FLASH, which make it a powerful open toolset for the academic HEDP community. We summarize these capabilities, emphasizing recent additions and improvements. We describe several non-ideal MHD capabilities that are being added to FLASH, including the Hall and Nernst effects, implicit resistivity, and a circuit model, which will allow modeling of Z-pinch experiments. We showcase the ability of FLASH to simulate Thomson scattering polarimetry, which measures Faraday due to the presence of magnetic fields, as well as proton radiography, proton self-emission, and Thomson scattering diagnostics. Finally, we describe several collaborations with the academic HEDP community in which FLASH simulations were used to design and interpret HEDP experiments. This work was supported in part at U. Chicago by DOE NNSA ASC through the Argonne Institute for Computing in Science under FWP 57789; DOE NNSA under NLUF Grant DE-NA0002724; DOE SC OFES Grant DE-SC0016566; and NSF Grant PHY-1619573.

The conjunction of non-consciously perceived object identity and spatial position can be retained during a visual short-term memory task.

PubMed

Bergström, Fredrik; Eriksson, Johan

2015-01-01

Although non-consciously perceived information has previously been assumed to be short-lived (< 500 ms), recent findings show that non-consciously perceived information can be maintained for at least 15 s. Such findings can be explained as working memory without a conscious experience of the information to be retained. However, whether or not working memory can operate on non-consciously perceived information remains controversial, and little is known about the nature of such non-conscious visual short-term memory (VSTM). Here we used continuous flash suppression to render stimuli non-conscious, to investigate the properties of non-consciously perceived representations in delayed match-to-sample (DMS) tasks. In Experiment I we used variable delays (5 or 15 s) and found that performance was significantly better than chance and was unaffected by delay duration, thereby replicating previous findings. In Experiment II the DMS task required participants to combine information of spatial position and object identity on a trial-by-trial basis to successfully solve the task. We found that the conjunction of spatial position and object identity was retained, thereby verifying that non-conscious, trial-specific information can be maintained for prospective use. We conclude that our results are consistent with a working memory interpretation, but that more research is needed to verify this interpretation.

A case study of the Thunderstorm Research International Project storm of July 11, 1978. I - Analysis of the data base

NASA Technical Reports Server (NTRS)

Nisbet, John S.; Barnard, Theresa A.; Forbes, Gregory S.; Krider, E. Philip; Lhermitte, Roger

1990-01-01

The data obtained at the time of the Thunderstorm Research International Project storm at the Kennedy Space Center on July 11, 1978 are analyzed in a model-independent manner. The data base included data from three Doppler radars, a lightning detection and ranging system and a network of 25 electric field mills, and rain gages. Electric field measurements were used to analyze the charge moments transferred by lightning flashes, and the data were fitted to Weibull distributions; these were used to estimate statistical parameters of the lightning for both intracloud and cloud-to-ground flashes and to estimate the fraction of the flashes which were below the observation threshold. The displacement and the conduction current densities were calculated from electric field measurements between flashes. These values were used to derive the magnitudes and the locations of dipole and monopole generators by least squares fitting the measured Maxwell current densities to the displacement-dominated equations.

An Implicit Solver on A Parallel Block-Structured Adaptive Mesh Grid for FLASH

NASA Astrophysics Data System (ADS)

Lee, D.; Gopal, S.; Mohapatra, P.

2012-07-01

We introduce a fully implicit solver for FLASH based on a Jacobian-Free Newton-Krylov (JFNK) approach with an appropriate preconditioner. The main goal of developing this JFNK-type implicit solver is to provide efficient high-order numerical algorithms and methodology for simulating stiff systems of differential equations on large-scale parallel computer architectures. A large number of natural problems in nonlinear physics involve a wide range of spatial and time scales of interest. A system that encompasses such a wide magnitude of scales is described as "stiff." A stiff system can arise in many different fields of physics, including fluid dynamics/aerodynamics, laboratory/space plasma physics, low Mach number flows, reactive flows, radiation hydrodynamics, and geophysical flows. One of the big challenges in solving such a stiff system using current-day computational resources lies in resolving time and length scales varying by several orders of magnitude. We introduce FLASH's preliminary implementation of a time-accurate JFNK-based implicit solver in the framework of FLASH's unsplit hydro solver.

Moving target detection in flash mode against stroboscopic mode by active range-gated laser imaging

NASA Astrophysics Data System (ADS)

Zhang, Xuanyu; Wang, Xinwei; Sun, Liang; Fan, Songtao; Lei, Pingshun; Zhou, Yan; Liu, Yuliang

2018-01-01

Moving target detection is important for the application of target tracking and remote surveillance in active range-gated laser imaging. This technique has two operation modes based on the difference of the number of pulses per frame: stroboscopic mode with the accumulation of multiple laser pulses per frame and flash mode with a single shot of laser pulse per frame. In this paper, we have established a range-gated laser imaging system. In the system, two types of lasers with different frequency were chosen for the two modes. Electric fan and horizontal sliding track were selected as the moving targets to compare the moving blurring between two modes. Consequently, the system working in flash mode shows more excellent performance in motion blurring against stroboscopic mode. Furthermore, based on experiments and theoretical analysis, we presented the higher signal-to-noise ratio of image acquired by stroboscopic mode than flash mode in indoor and underwater environment.

Engineering Customized TALE Nucleases (TALENs) and TALE Transcription Factors by Fast Ligation-based Automatable Solid-phase High-throughput (FLASH) Assembly

PubMed Central

Reyon, Deepak; Maeder, Morgan L.; Khayter, Cyd; Tsai, Shengdar Q.; Foley, Jonathan E.; Sander, Jeffry D.; Joung, J. Keith

2013-01-01

Customized DNA-binding domains made using Transcription Activator-Like Effector (TALE) repeats are rapidly growing in importance as widely applicable research tools. TALE nucleases (TALENs), composed of an engineered array of TALE repeats fused to the FokI nuclease domain, have been used successfully for directed genome editing in multiple different organisms and cell types. TALE transcription factors (TALE-TFs), consisting of engineered TALE repeat arrays linked to a transcriptional regulatory domain, have been used to up- or down-regulate expression of endogenous genes in human cells and plants. Here we describe a detailed protocol for practicing the recently described Fast Ligation-based Automatable Solid-phase High-throughput (FLASH) assembly method. FLASH enables automated high-throughput construction of engineered TALE repeats using an automated liquid handling robot or manually using a multi-channel pipet. With the automated version of FLASH, a single researcher can construct up to 96 DNA fragments encoding various length TALE repeat arrays in one day and then clone these to construct sequence-verified TALEN or TALE-TF expression plasmids in one week or less. Plas-mids required to practice FLASH are available by request from the Joung Lab (http://www.jounglab.org/). We also describe here improvements to the Zinc Finger and TALE Targeter (ZiFiT Targeter) webserver (http://ZiFiTBeta.partners.org) that facilitate the design and construction of FLASH TALE repeat arrays in high-throughput. PMID:23821439

PV module mounting method and mounting assembly

DOEpatents

Lenox, Carl J.S.; Johnson, Kurt M.

2013-04-23

A method for mounting PV modules to a deck includes selecting PV module layout pattern so that adjacent PV module edges are spaced apart. PV mounting and support assemblies are secured to the deck according to the layout pattern using fasteners extending into the deck. The PV modules are placed on the PV mounting and support assemblies. Retaining elements are located over and secured against the upper peripheral edge surfaces of the PV modules so to secure them to the deck with the peripheral edges of the PV modules spaced apart from the deck. In some examples a PV module mounting assembly, for use on a shingled deck, comprises flashing, a base mountable on the flashing, a deck-penetrating fastener engageable with the base and securable to the deck so to secure the flashing and the base to the shingled deck, and PV module mounting hardware securable to the base.

Status of the photomultiplier-based FlashCam camera for the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Pühlhofer, G.; Bauer, C.; Eisenkolb, F.; Florin, D.; Föhr, C.; Gadola, A.; Garrecht, F.; Hermann, G.; Jung, I.; Kalekin, O.; Kalkuhl, C.; Kasperek, J.; Kihm, T.; Koziol, J.; Lahmann, R.; Manalaysay, A.; Marszalek, A.; Rajda, P. J.; Reimer, O.; Romaszkan, W.; Rupinski, M.; Schanz, T.; Schwab, T.; Steiner, S.; Straumann, U.; Tenzer, C.; Vollhardt, A.; Weitzel, Q.; Winiarski, K.; Zietara, K.

2014-07-01

The FlashCam project is preparing a camera prototype around a fully digital FADC-based readout system, for the medium sized telescopes (MST) of the Cherenkov Telescope Array (CTA). The FlashCam design is the first fully digital readout system for Cherenkov cameras, based on commercial FADCs and FPGAs as key components for digitization and triggering, and a high performance camera server as back end. It provides the option to easily implement different types of trigger algorithms as well as digitization and readout scenarios using identical hardware, by simply changing the firmware on the FPGAs. The readout of the front end modules into the camera server is Ethernet-based using standard Ethernet switches and a custom, raw Ethernet protocol. In the current implementation of the system, data transfer and back end processing rates of 3.8 GB/s and 2.4 GB/s have been achieved, respectively. Together with the dead-time-free front end event buffering on the FPGAs, this permits the cameras to operate at trigger rates of up to several ten kHz. In the horizontal architecture of FlashCam, the photon detector plane (PDP), consisting of photon detectors, preamplifiers, high voltage-, control-, and monitoring systems, is a self-contained unit, mechanically detached from the front end modules. It interfaces to the digital readout system via analogue signal transmission. The horizontal integration of FlashCam is expected not only to be more cost efficient, it also allows PDPs with different types of photon detectors to be adapted to the FlashCam readout system. By now, a 144-pixel mini-camera" setup, fully equipped with photomultipliers, PDP electronics, and digitization/ trigger electronics, has been realized and extensively tested. Preparations for a full-scale, 1764 pixel camera mechanics and a cooling system are ongoing. The paper describes the status of the project.

Sternal Skin Conductance: A reasonable surrogate for Hot Flash Measurement?

PubMed Central

Pachman, Deirdre R.; Loprinzi, Charles L.; Novotny, Paul J; Satele, Daniel V; Linquist, Breanna M.; Wolf, Sherry; Barton, Debra L.

2013-01-01

Objective The aim of this study was to examine the accuracy of a new sternal skin conductance (SSC) device for the measurement of hot flashes, and secondly, to assess the acceptability of the device by women. Methods Three small descriptive pilot studies were performed utilizing two sequential prototypes of the SSC device developed by an engineering device company in the Midwest. The devices were worn either in a monitored setting for 24 hours or in an ambulatory setting for 5 weeks. During the study period, women recorded hot flashes in a prospective hot flash diary and also answered questions about the acceptability of wearing the SSC device. Results The first prototype was not able to collect any analyzable skin conductance data due to various malfunction issues; including poor conductance and battery failure. However, 16 patients did wear the device for 5 weeks and reported that wearing the device was acceptable, although 31% stated that it did interfere with daily activities. Hot flash data from the second prototype revealed a concordance rate between patient reported and device recorded hot flashes of 24%. Conclusions Findings from these studies support the discordance between SSC recorded and patient reported hot flashes. In addition, the studies reveal further limitations of SSC monitoring, including difficulties with data collection and lack of consistency in interpretation. Based on these results and other recent trials identifying issues with SSC methodology, it is time to find a better physiologic surrogate measure for hot flashes. PMID:23571528

Screening for Human Immunodeficiency Virus, Hepatitis B Virus, Hepatitis C Virus, and Treponema pallidum by Blood Testing Using a Bio-Flash Technology-Based Algorithm before Gastrointestinal Endoscopy

PubMed Central

Zhen, Chen; QuiuLi, Zhang; YuanQi, An; Casado, Verónica Vocero; Fan, Yuan

2016-01-01

Currently, conventional enzyme immunoassays which use manual gold immunoassays and colloidal tests (GICTs) are used as screening tools to detect Treponema pallidum (syphilis), hepatitis B virus (HBV), hepatitis C virus (HCV), human immunodeficiency virus type 1 (HIV-1), and HIV-2 in patients undergoing surgery. The present observational, cross-sectional study compared the sensitivity, specificity, and work flow characteristics of the conventional algorithm with manual GICTs with those of a newly proposed algorithm that uses the automated Bio-Flash technology as a screening tool in patients undergoing gastrointestinal (GI) endoscopy. A total of 956 patients were examined for the presence of serological markers of infection with HIV-1/2, HCV, HBV, and T. pallidum. The proposed algorithm with the Bio-Flash technology was superior for the detection of all markers (100.0% sensitivity and specificity for detection of anti-HIV and anti-HCV antibodies, HBV surface antigen [HBsAg], and T. pallidum) compared with the conventional algorithm based on the manual method (80.0% sensitivity and 98.6% specificity for the detection of anti-HIV, 75.0% sensitivity for the detection of anti-HCV, 94.7% sensitivity for the detection of HBsAg, and 100% specificity for the detection of anti-HCV and HBsAg) in these patients. The automated Bio-Flash technology-based screening algorithm also reduced the operation time by 85.0% (205 min) per day, saving up to 24 h/week. In conclusion, the use of the newly proposed screening algorithm based on the automated Bio-Flash technology can provide an advantage over the use of conventional algorithms based on manual methods for screening for HIV, HBV, HCV, and syphilis before GI endoscopy. PMID:27707942

Screening for Human Immunodeficiency Virus, Hepatitis B Virus, Hepatitis C Virus, and Treponema pallidum by Blood Testing Using a Bio-Flash Technology-Based Algorithm before Gastrointestinal Endoscopy.

PubMed

Jun, Zhou; Zhen, Chen; QuiuLi, Zhang; YuanQi, An; Casado, Verónica Vocero; Fan, Yuan

2016-12-01

Currently, conventional enzyme immunoassays which use manual gold immunoassays and colloidal tests (GICTs) are used as screening tools to detect Treponema pallidum (syphilis), hepatitis B virus (HBV), hepatitis C virus (HCV), human immunodeficiency virus type 1 (HIV-1), and HIV-2 in patients undergoing surgery. The present observational, cross-sectional study compared the sensitivity, specificity, and work flow characteristics of the conventional algorithm with manual GICTs with those of a newly proposed algorithm that uses the automated Bio-Flash technology as a screening tool in patients undergoing gastrointestinal (GI) endoscopy. A total of 956 patients were examined for the presence of serological markers of infection with HIV-1/2, HCV, HBV, and T. pallidum The proposed algorithm with the Bio-Flash technology was superior for the detection of all markers (100.0% sensitivity and specificity for detection of anti-HIV and anti-HCV antibodies, HBV surface antigen [HBsAg], and T. pallidum) compared with the conventional algorithm based on the manual method (80.0% sensitivity and 98.6% specificity for the detection of anti-HIV, 75.0% sensitivity for the detection of anti-HCV, 94.7% sensitivity for the detection of HBsAg, and 100% specificity for the detection of anti-HCV and HBsAg) in these patients. The automated Bio-Flash technology-based screening algorithm also reduced the operation time by 85.0% (205 min) per day, saving up to 24 h/week. In conclusion, the use of the newly proposed screening algorithm based on the automated Bio-Flash technology can provide an advantage over the use of conventional algorithms based on manual methods for screening for HIV, HBV, HCV, and syphilis before GI endoscopy. Copyright © 2016 Jun et al.

Hot Flashes among Prostate Cancer Patients Undergoing Androgen Deprivation Therapy: Psychosocial and Quality of Life Issues

DTIC Science & Technology

2006-12-01

SCL magnitude indicative of hot flashes in menopausal women is valid for PCS (Carpenter, 2005b). Due to a lack of validation studies, we aimed to...objective assessment of hot flashes has been based entirely on studies of menopausal women and women with breast cancer, and ours is the first study to...presence of chest hair proved to be an obstacle to ease of use. Removal of chest hair was not an option, as this also removes skin which, in turn

On the origin of resistive switching volatility in Ni/TiO{sub 2}/Ni stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cortese, Simone, E-mail: simone.cortese@soton.ac.uk; Trapatseli, Maria; Khiat, Ali

2016-08-14

Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO{sub 2} is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin filmmore » sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.« less

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

PubMed

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Impact of Recent Hardware and Software Trends on High Performance Transaction Processing and Analytics

NASA Astrophysics Data System (ADS)

Mohan, C.

In this paper, I survey briefly some of the recent and emerging trends in hardware and software features which impact high performance transaction processing and data analytics applications. These features include multicore processor chips, ultra large main memories, flash storage, storage class memories, database appliances, field programmable gate arrays, transactional memory, key-value stores, and cloud computing. While some applications, e.g., Web 2.0 ones, were initially built without traditional transaction processing functionality in mind, slowly system architects and designers are beginning to address such previously ignored issues. The availability, analytics and response time requirements of these applications were initially given more importance than ACID transaction semantics and resource consumption characteristics. A project at IBM Almaden is studying the implications of phase change memory on transaction processing, in the context of a key-value store. Bitemporal data management has also become an important requirement, especially for financial applications. Power consumption and heat dissipation properties are also major considerations in the emergence of modern software and hardware architectural features. Considerations relating to ease of configuration, installation, maintenance and monitoring, and improvement of total cost of ownership have resulted in database appliances becoming very popular. The MapReduce paradigm is now quite popular for large scale data analysis, in spite of the major inefficiencies associated with it.

Towards a better knowledge of flash flood forecasting at the Three Gorges Region: Progress over the past decade and challenges ahead

NASA Astrophysics Data System (ADS)

Li, Zhe; Yang, Dawen; Yang, Hanbo; Wu, Tianjiao; Xu, Jijun; Gao, Bing; Xu, Tao

2015-04-01

The study area, the Three Gorges Region (TGR), plays a critical role in predicting the floods drained into the Three Gorges Reservoir, as reported local floods often exceed 10000m3/s during rainstorm events and trigger fast as well as significant impacts on the Three Gorges Reservoir's regulation. Meanwhile, it is one of typical mountainous areas in China, which is located in the transition zone between two monsoon systems: the East Asian monsoon and the South Asian (Indian) monsoon. This climatic feature, combined with local irregular terrains, has shaped complicated rainfall-runoff regimes in this focal region. However, due to the lack of high-resolution hydrometeorological data and physically-based hydrologic modeling framework, there was little knowledge about rainfall variability and flood pattern in this historically ungauged region, which posed great uncertainties to flash flood forecasting in the past. The present study summarize latest progresses of regional flash floods monitoring and prediction, including installation of a ground-based Hydrometeorological Observation Network (TGR-HMON), application of a regional geomorphology-based hydrological model (TGR-GBHM), development of an integrated forecasting and modeling system (TGR-INFORMS), and evaluation of quantitative precipitation estimations (QPE) and quantitative precipitation forecasting (QPF) products in TGR flash flood forecasting. With these continuing efforts to improve the forecasting performance of flash floods in TGR, we have addressed several critical issues: (1) Current observation network is still insufficient to capture localized rainstorms, and weather radar provides valuable information to forecast flash floods induced by localized rainstorms, although current radar QPE products can be improved substantially in future; (2) Long-term evaluation shows that the geomorphology-based distributed hydrologic model (GBHM) is able to simulate flash flooding processes reasonably, while model performance will decline at hourly scale with larger uncertainties. However, model comparison suggests that this physically-based distributed model (GBHM), compared with a traditional lumped model (Xin'anjiang model), shows more robust performance and larger transferability for prediction in those ungauged basins in TGR; (3) Operational test of our integrated forecasting system (TRG-INFORMS) shows that it works reasonably to simulate the flood routing in Three Gorges reservoir, indicating the accuracy of simulation of total floods generated at region scale; (4) Current operational QPF is too coarse to provide valuable information even for flood forecasting of whole TGR, thus, downscaling and high-resolution QPF are necessary to unravel the potentials of weather forecasting. Finally, according to these results, we also discuss about some possible solutions with high priority for future advanced forecasting scheme of local flash floods in TGR.

Fabrication of universal serial bus flash disk type microfluidic chip electrophoresis and application for protein analysis under ultra low voltage

PubMed Central

Cong, Hailin; Xu, Xiaodan; Yu, Bing; Liu, Huwei

2016-01-01

A simple and effective universal serial bus (USB) flash disk type microfluidic chip electrophoresis (MCE) was developed by using poly(dimethylsiloxane) based soft lithography and dry film based printed circuit board etching techniques in this paper. The MCE had a microchannel diameter of 375 μm and an effective length of 25 mm. Equipped with a conventional online electrochemical detector, the device enabled effectively separation of bovine serum albumin, lysozyme, and cytochrome c in 80 s under the ultra low voltage from a computer USB interface. Compared with traditional capillary electrophoresis, the USB flash disk type MCE is not only portable and inexpensive but also fast with high separation efficiency. PMID:27042249

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

Multilinear approach to the precipitation-lightning relationship: a case study of summer local electrical storms in the northern part of Spain during 2002-2009 period

NASA Astrophysics Data System (ADS)

Herrero, I.; Ezcurra, A.; Areitio, J.; Diaz-Argandoña, J.; Ibarra-Berastegi, G.; Saenz, J.

2013-11-01

Storms developed under local instability conditions are studied in the Spanish Basque region with the aim of establishing precipitation-lightning relationships. Those situations may produce, in some cases, flash flood. Data used correspond to daily rain depth (mm) and the number of CG flashes in the area. Rain and lightning are found to be weakly correlated on a daily basis, a fact that seems related to the existence of opposite gradients in their geographical distribution. Rain anomalies, defined as the difference between observed and estimated rain depth based on CG flashes, are analysed by PCA method. Results show a first EOF explaining 50% of the variability that linearly relates the rain anomalies observed each day and that confirms their spatial structure. Based on those results, a multilinear expression has been developed to estimate the rain accumulated daily in the network based on the CG flashes registered in the area. Moreover, accumulates and maximum values of rain are found to be strongly correlated, therefore making the multilinear expression a useful tool to estimate maximum precipitation during those kind of storms.

THE AGWA – KINEROS2 SUITE OF MODELING TOOLS

USDA-ARS?s Scientific Manuscript database

A suite of modeling tools ranging from the event-based KINEROS2 flash-flood forecasting tool to the continuous (K2-O2) KINEROS-OPUS biogeochemistry tool. The KINEROS2 flash flood forecasting tool is being tested with the National Weather Service (NEW) is described. Tne NWS version assimilates Dig...

Flash-point prediction for binary partially miscible mixtures of flammable solvents.

PubMed

Liaw, Horng-Jang; Lu, Wen-Hung; Gerbaud, Vincent; Chen, Chan-Cheng

2008-05-30

Flash point is the most important variable used to characterize fire and explosion hazard of liquids. Herein, partially miscible mixtures are presented within the context of liquid-liquid extraction processes. This paper describes development of a model for predicting the flash point of binary partially miscible mixtures of flammable solvents. To confirm the predictive efficacy of the derived flash points, the model was verified by comparing the predicted values with the experimental data for the studied mixtures: methanol+octane; methanol+decane; acetone+decane; methanol+2,2,4-trimethylpentane; and, ethanol+tetradecane. Our results reveal that immiscibility in the two liquid phases should not be ignored in the prediction of flash point. Overall, the predictive results of this proposed model describe the experimental data well. Based on this evidence, therefore, it appears reasonable to suggest potential application for our model in assessment of fire and explosion hazards, and development of inherently safer designs for chemical processes containing binary partially miscible mixtures of flammable solvents.

Combine Flash-Based FPGA TID and Long-Term Retention Reliabilities Through VT Shift

NASA Astrophysics Data System (ADS)

Wang, Jih-Jong; Rezzak, Nadia; Dsilva, Durwyn; Xue, Fengliang; Samiee, Salim; Singaraju, Pavan; Jia, James; Nguyen, Victor; Hawley, Frank; Hamdy, Esmat

2016-08-01

Reliability test results of data retention and total ionizing dose (TID) in 65 nm Flash-based field programmable gate array (FPGA) are presented. Long-chain inverter design is recommended for reliability evaluation because it is the worst case design for both effects. Based on preliminary test data, both issues are unified and modeled by one natural decay equation. The relative contributions of TID induced threshold-voltage shift and retention mechanisms are evaluated by analyzing test data.

Evaluation of Internet websites about floaters and light flashes in patient education.

PubMed

Barbosa, Andréa Lima; Martins, Elisabeth Nogueira

2007-01-01

Flashes of light and floaters are most commonly caused by posterior vitreous separation but may be associated with sight-threatening disorders. Prevention of severe sequelae requires prompt dilated eye examination. Thus, information dissemination is crucial. This study aimed to evaluate the quality of information about floaters and light flashes available for patients on the Internet. Cross-sectional study. In July 2005 we evaluated information available on the Internet regarding floaters and light flashes, using two search engines (MetaCrawler and MSN) and three key terms ("floaters", "dark spots eye", and "light flashes eye"). The quality of each website was evaluated using a score system. The sites were classified as academic, organizational or commercial. Readability, general quality of the website (based on: ownership, purpose, authorship, author qualification, attribution, interactivity, and currency) and quality of the specific content (definition, causes, epidemiology, diagnosis, treatment, and prognosis) were analyzed. Of 145 websites evaluated, 49 were included. Four sites (8.2%) were academic, 9 (18.4%) organizational, and 36 (73.4%) commercial. In the majority of the sites (53.0%) information was poor and quality was not correlated with website classification. Information about floaters and light flashes available on the Internet is poor.

An Evaluation of Flash Cells Used in Critical Applications

NASA Technical Reports Server (NTRS)

Katz, Rich; Flowers, David; Bergevin, Keith

2016-01-01

Due to the common use of Flash technology in many commercial and industrial Programmable Logic Devices (PLDs) such as FPGAs and mixed-signal microcontrollers, flash technology is being utilized in fuzed munition applications. This presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. Initial test results based on a study of charge loss in flash cells in an FPGA device is presented. Statistical data taken from a small sample set indicates quantifiable charge loss for devices stored at both room temperature and 150 C. Initial evaluation of the distribution of threshold voltage in a large sample set (800 devices) is presented. The magnitude of charge loss from exposure to electrostatic discharge and electromagnetic fields is measured and presented. Simulated data (and measured data as available) resultant from harsh-environment testing (neutron, heavy ion, EMP) is presented.

Age-related change in fast adaptation mechanisms measured with the scotopic full-field ERG.

PubMed

Tillman, Megan A; Panorgias, Athanasios; Werner, John S

2016-06-01

To quantify the response dynamics of fast adaptation mechanisms of the scotopic ERG in younger and older adults using full-field m-sequence flash stimulation. Scotopic ERGs were measured for a series of flashes separated by 65 ms over a range of 260 ms in 16 younger (20-26, 22.2 ± 2.1; range mean ±1 SD) and 16 older (65-85, 71.2 ± 7) observers without retinal pathology. A short-wavelength (λ peak = 442 nm) LED was used for scotopic stimulation, and the flashes ranged from 0.0001 to 0.01 cd s m(-2). The complete binary kernel series was derived from the responses to the m-sequence flash stimulation, and the first- and second-order kernel responses were analyzed. The first-order kernel represented the response to a single, isolated flash, while the second-order kernels reflected the adapted flash responses that followed a single flash by one or more base intervals. B-wave amplitudes of the adapted flash responses were measured and plotted as a function of interstimulus interval to describe the recovery of the scotopic ERG. A linear function was fitted to the linear portion of the recovery curve, and the slope of the line was used to estimate the rate of fast adaptation recovery. The amplitudes of the isolated flash responses and rates of scotopic fast adaptation recovery were compared between the younger and older participants using a two-way ANOVA. The isolated flash responses and rates of recovery were found to be significantly lower in the older adults. However, there was no difference between the two age groups in response amplitude or recovery rate after correcting for age-related changes in the density of the ocular media. These results demonstrated that the rate of scotopic fast adaptation recovery of normal younger and older adults is similar when stimuli are equated for retinal illuminance.

Nonlinear dynamic model of a gear-rotor-bearing system considering the flash temperature

NASA Astrophysics Data System (ADS)

Gou, Xiangfeng; Zhu, Lingyun; Qi, Changjun

2017-12-01

The instantaneous flash temperature is an important factor for gears in service. To investigate the effect of the flash temperature of a tooth surface on the dynamics of the spur gear system, a modified nonlinear dynamic model of a gear-rotor-bearing system is established. The factors such as the contact temperature of the tooth surface, time-varying stiffness, tooth surface friction, backlash, the comprehensive transmission error and so on are considered. The flash temperature of a tooth surface of pinion and gear is formulated according to Blok's flash temperature theory. The mathematical expression of the contact temperature of the tooth surface varied with time is derived and the tooth profile deformation caused by the change of the flash temperature of the tooth surface is calculated. The expression of the mesh stiffness varied with the flash temperature of the tooth surface is derived based on Hertz contact theory. The temperature stiffness is proposed and added to the nonlinear dynamic model of the system. The influence of load on the flash temperature of the tooth surface is analyzed in the parameters plane. The variation of the flash temperature of the tooth surface is studied. The numerical results indicate that the calculated method of the flash temperature of the gear tooth surface is effective and it can reflect the rules for the change of gear meshing temperature and sliding of the gear tooth surface. The effects of frequency, backlash, bearing clearance, comprehensive transmission error and time-varying stiffness on the nonlinear dynamics of the system are analyzed according to the bifurcation diagrams, Top Lyapunov Exponent (TLE) spectrums, phase portraits and Poincaré maps. Some nonlinear phenomena such as periodic bifurcation, grazing bifurcation, quasi-periodic bifurcation, chaos and its routes to chaos are investigated and the critical parameters are identified. The results provide an understanding of the system and serve as a useful reference in designing such systems.

Energy consumption estimation of an OMAP-based Android operating system

NASA Astrophysics Data System (ADS)

González, Gabriel; Juárez, Eduardo; Castro, Juan José; Sanz, César

2011-05-01

System-level energy optimization of battery-powered multimedia embedded systems has recently become a design goal. The poor operational time of multimedia terminals makes computationally demanding applications impractical in real scenarios. For instance, the so-called smart-phones are currently unable to remain in operation longer than several hours. The OMAP3530 processor basically consists of two processing cores, a General Purpose Processor (GPP) and a Digital Signal Processor (DSP). The former, an ARM Cortex-A8 processor, is aimed to run a generic Operating System (OS) while the latter, a DSP core based on the C64x+, has architecture optimized for video processing. The BeagleBoard, a commercial prototyping board based on the OMAP processor, has been used to test the Android Operating System and measure its performance. The board has 128 MB of SDRAM external memory, 256 MB of Flash external memory and several interfaces. Note that the clock frequency of the ARM and DSP OMAP cores is 600 MHz and 430 MHz, respectively. This paper describes the energy consumption estimation of the processes and multimedia applications of an Android v1.6 (Donut) OS on the OMAP3530-Based BeagleBoard. In addition, tools to communicate the two processing cores have been employed. A test-bench to profile the OS resource usage has been developed. As far as the energy estimates concern, the OMAP processor energy consumption model provided by the manufacturer has been used. The model is basically divided in two energy components. The former, the baseline core energy, describes the energy consumption that is independent of any chip activity. The latter, the module active energy, describes the energy consumed by the active modules depending on resource usage.

NO{sub x} from lightning 1. Global distribution based on lightning physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, C.; Penner, J.; Prather, M.

1997-03-01

This paper begins a study on the role of lightning in maintaining the global distribution of nitrogen oxides (NO{sub x}) in the troposphere. It presents the first global and seasonal distributions of lightning-produced NO{sub x} (LNO{sub x}) based on the observed distribution of electrical storms and the physical properties of lightning strokes. We derive a global rate for cloud-to-ground (CG) flashes of 20{endash}30 flashes/s with a mean energy per flash of 6.7{times}10{sup 9}J. Intracloud (IC) flashes are more frequent, 50{endash}70 flashes/s but have 10{percent} of the energy of CG strokes and, consequently, produce significantly less NO{sub x}. It appears tomore » us that the majority of previous studies have mistakenly assumed that all lightning flashes produce the same amount of NO{sub x}, thus overestimating the NO{sub x} production by a factor of 3. On the other hand, we feel these same studies have underestimated the energy released in CG flashes, resulting in two negating assumptions. For CG energies we adopt a production rate of 10{times}10{sup 16} molecules NO/J based on the current literature. Using a method to simulate global lightning frequencies from satellite-observed cloud data, we have calculated the LNO{sub x} on various spatial (regional, zonal, meridional, and global) and temporal scales (daily, monthly, seasonal, and interannual). Regionally, the production of LNO{sub x} is concentrated over tropical continental regions, predominantly in the summer hemisphere. The annual mean production rate is calculated to be 12.2 Tg N/yr, and we believe it extremely unlikely that this number is less than 5 or more than 20 Tg N/yr. Although most of LNO{sub x} is produced in the lowest 5 km by CG lightning, convective mixing in the thunderstorms is likely to deposit large amounts of NO{sub x} in the upper troposphere where it is important in ozone production. (Abstract Truncated)« less

Why Flash Type Matters: A Statistical Analysis

NASA Astrophysics Data System (ADS)

Mecikalski, Retha M.; Bitzer, Phillip M.; Carey, Lawrence D.

2017-09-01

While the majority of research only differentiates between intracloud (IC) and cloud-to-ground (CG) flashes, there exists a third flash type, known as hybrid flashes. These flashes have extensive IC components as well as return strokes to ground but are misclassified as CG flashes in current flash type analyses due to the presence of a return stroke. In an effort to show that IC, CG, and hybrid flashes should be separately classified, the two-sample Kolmogorov-Smirnov (KS) test was applied to the flash sizes, flash initiation, and flash propagation altitudes for each of the three flash types. The KS test statistically showed that IC, CG, and hybrid flashes do not have the same parent distributions and thus should be separately classified. Separate classification of hybrid flashes will lead to improved lightning-related research, because unambiguously classified hybrid flashes occur on the same order of magnitude as CG flashes for multicellular storms.

Flash floods in Europe: state of the art and research perspectives

NASA Astrophysics Data System (ADS)

Gaume, Eric

2014-05-01

Flash floods, i.e. floods induced by severe rainfall events generally affecting watersheds of limited area, are the most frequent, destructive and deadly kind of natural hazard known in Europe and throughout the world. Flash floods are especially intense across the Mediterranean zone, where rainfall accumulations exceeding 500 mm within a few hours may be observed. Despite this state of facts, the study of extremes in hydrology has essentially gone unexplored until the recent past, with the exception of some rare factual reports on individual flood events, with the sporadic inclusion of isolated estimated peak discharges. Floods of extraordinary magnitude are in fact hardly ever captured by existing standard measurement networks, either because they are too heavily concentrated in space and time or because their discharges greatly exceed the design and calibration ranges of the measurement devices employed (stream gauges). This situation has gradually evolved over the last decade for two main reasons. First, the expansion and densification of weather radar networks, combined with improved radar quantitative precipitation estimates, now provide ready access to rainfall measurements at spatial and temporal scales that, while not perfectly accurate, are compatible with the study of extreme events. Heavy rainfall events no longer fail to be recorded by existing rain gauge and radar networks. Second, pioneering research efforts on extreme floods, based on precise post-flood surveys, have helped overcome the limitations imposed by a small base of available direct measured data. This activity has already yielded significant progress in expanding the knowledge and understanding of extreme flash floods. This presentation will provide a review of the recent research progresses in the area of flash flood studies, mainly based on the outcomes of the European research projects FLOODsite, HYDRATE and Hymex. It will show how intensive collation of field data helped better define the possible magnitudes of flood volumes and discharges during flash floods, their spatial distribution and rates of occurrence, as well as the factors that control the hydrological response of watersheds to heavy rainfalls explaining the large spatial variability in flood hazard. Developments in the fields of flood frequency analyses and flood forecasting based on the recently acquired data or adapted for the valuation of this specific data will also be presented. The presentation will end suggesting some perspectives for future research activities on flash floods.

Nocturnal Hot Flashes: Relationship to Objective Awakenings and Sleep Stage Transitions

PubMed Central

Bianchi, Matt T.; Kim, Semmie; Galvan, Thania; White, David P.; Joffe, Hadine

2016-01-01

Study Objectives: While women report sleep interruption secondary to nighttime hot flashes, the sleep disrupting impact of nocturnal hot flashes (HF) is not well characterized. We utilized a model of induced HF to investigate the relationship of nighttime HF to sleep architecture and sleep-stage transitions. Methods: Twenty-eight healthy, premenopausal volunteers received the depot gonadotropin-releasing hormone agonist (GnRHa) leuprolide to rapidly induce menopause, manifesting with HF. Sleep disruption was measured on 2 polysomnograms conducted before and after 4–5 weeks on leuprolide, when HF had developed. Results: 165 HF episodes were recorded objectively during 48 sleep studies (mean 3.4 HF/night). After standardizing to sleep-stage time distribution, the majority of HF were recorded during wake (51.0%) and stage N1 (18.8%). Sixty-six percent of HF occurred within 5 minutes of an awakening, with 80% occurring just before or during the awakening. Objective HF were not associated with sleep disruption as measured by increased transitions to wake or N1, but self-reported nocturnal HF correlated with an increase from pre- to post-leuprolide in the rate of transitions to wake (p = 0.01), and to N1 (p = 0.008). Conclusions: By isolating the effect of HF on sleep in women without the confound of age-related sleep changes associated with natural menopause, this experimental model shows that HF arise most commonly during N1 and wake, typically preceding or occurring simultaneously with wake episodes. Perception of HF, but not objective HF, is linked to increased sleep-stage transitions, suggesting that sleep disruption increases awareness of and memory for nighttime HF events. Clinical Trial Registration: ClinicalTrials.gov Identifier: NCT01116401. Citation: Bianchi MT, Kim S, Galvan T, White DP, Joffe H. Nocturnal hot flashes: relationship to objective awakenings and sleep stage transitions. J Clin Sleep Med 2016;12(7):1003–1009. PMID:26951410

Time evolution of coherent structures in networks of Hindmarch Rose neurons

NASA Astrophysics Data System (ADS)

Mainieri, M. S.; Erichsen, R.; Brunnet, L. G.

2005-08-01

In the regime of partial synchronization, networks of diffusively coupled Hindmarch-Rose neurons show coherent structures developing in a region of the phase space which is wider than in the correspondent single neuron. Such structures are kept, without important changes, during several bursting periods. In this work, we study the time evolution of these structures and their dynamical stability under damage. This system may model the behavior of ensembles of neurons coupled through a bidirectional gap junction or, in a broader sense, it could also account for the molecular cascades present in the formation of flash and short time memory.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Synchronizing Photography For High-Speed-Engine Research

NASA Technical Reports Server (NTRS)

Chun, K. S.

1989-01-01

Light flashes when shaft reaches predetermined angle. Synchronization system facilitates visualization of flow in high-speed internal-combustion engines. Designed for cinematography and holographic interferometry, system synchronizes camera and light source with predetermined rotational angle of engine shaft. 10-bit resolution of absolute optical shaft encoder adapted, and 2 to tenth power combinations of 10-bit binary data computed to corresponding angle values. Pre-computed angle values programmed into EPROM's (erasable programmable read-only memories) to use as angle lookup table. Resolves shaft angle to within 0.35 degree at rotational speeds up to 73,240 revolutions per minute.

UDCM Operating Procedure (Limited Functionality prototype)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newell, Matthew R.

2016-06-14

The UDCM is a two channel low current measurement device designed to record sub-nano-amp to micro-amp currents from radiation detectors. The UDCM incorporates a Commercial-Off-The- Shelf (COTS) processor enabling both serial over USB as well as Ethernet communications. The instrument includes microSD and USB flash memory for data storage as well as a programmable High Voltage (HV) power supply for detector bias. The UDCM incorporates a unique TTL output feature first used in the LANL Current to Pulse Converter (CPC). Two SMA connectors on the UDCM provide TTL pulses at a frequency proportional to the input currents.

MobRISK: a model for assessing the exposure of road users to flash flood events

NASA Astrophysics Data System (ADS)

Shabou, Saif; Ruin, Isabelle; Lutoff, Céline; Debionne, Samuel; Anquetin, Sandrine; Creutin, Jean-Dominique; Beaufils, Xavier

2017-09-01

Recent flash flood impact studies highlight that road networks are often disrupted due to adverse weather and flash flood events. Road users are thus particularly exposed to road flooding during their daily mobility. Previous exposure studies, however, do not take into consideration population mobility. Recent advances in transportation research provide an appropriate framework for simulating individual travel-activity patterns using an activity-based approach. These activity-based mobility models enable the prediction of the sequence of activities performed by individuals and locating them with a high spatial-temporal resolution. This paper describes the development of the MobRISK microsimulation system: a model for assessing the exposure of road users to extreme hydrometeorological events. MobRISK aims at providing an accurate spatiotemporal exposure assessment by integrating travel-activity behaviors and mobility adaptation with respect to weather disruptions. The model is applied in a flash-flood-prone area in southern France to assess motorists' exposure to the September 2002 flash flood event. The results show that risk of flooding mainly occurs in principal road links with considerable traffic load. However, a lag time between the timing of the road submersion and persons crossing these roads contributes to reducing the potential vehicle-related fatal accidents. It is also found that sociodemographic variables have a significant effect on individual exposure. Thus, the proposed model demonstrates the benefits of considering spatiotemporal dynamics of population exposure to flash floods and presents an important improvement in exposure assessment methods. Such improved characterization of road user exposures can present valuable information for flood risk management services.

Excitation and desensitization of mouse rod photoreceptors in vivo following bright adapting light

PubMed Central

Kang Derwent, Jennifer J; Qtaishat, Nasser M; Pepperberg, David R

2002-01-01

Electroretinographic (ERG) methods were used to determine response properties of mouse rod photoreceptors in vivo following adapting illumination that produced a significant extent of rhodopsin bleaching. Bleaching levels prevailing at ∼10 min and ∼20 min after the adapting exposure were on average 14% and 9%, respectively, based on the analysis of visual cycle retinoids in the eye tissues. Recovery of the rod response to the adapting light was monitored by analysing the ERG a-wave response to a bright probe flash presented at varying times during dark adaptation. A paired-flash procedure, in which the probe flash was presented at defined times after a weak test flash of fixed strength, was used to determine sensitivity of the rod response to the test flash. Recovery of the response to the adapting light was 80% complete at 13.5 ± 3.0 min (mean ± s.d.; n = 7) after adapting light offset. The adapting light caused prolonged desensitization of the weak-flash response derived from paired-flash data. By comparison with results obtained in the absence of the adapting exposure, desensitization determined with a test-probe interval of 80 ms was ∼fourfold after 5 min of dark adaptation and ∼twofold after 20 min. The results indicate, for mouse rods in vivo, that the time scale for recovery of weak-flash sensitivity substantially exceeds that for the recovery of circulating current following significant rhodopsin bleaching. The lingering desensitization may reflect a reduced efficiency of signal transmission in the phototransduction cascade distinct from that due to residual excitation. PMID:12015430

I/O performance evaluation of a Linux-based network-attached storage device

NASA Astrophysics Data System (ADS)

Sun, Zhaoyan; Dong, Yonggui; Wu, Jinglian; Jia, Huibo; Feng, Guanping

2002-09-01

In a Local Area Network (LAN), clients are permitted to access the files on high-density optical disks via a network server. But the quality of read service offered by the conventional server is not satisfied because of the multiple functions on the server and the overmuch caller. This paper develops a Linux-based Network-Attached Storage (NAS) server. The Operation System (OS), composed of an optimized kernel and a miniaturized file system, is stored in a flash memory. After initialization, the NAS device is connected into the LAN. The administrator and users could configure the access the server through the web page respectively. In order to enhance the quality of access, the management of buffer cache in file system is optimized. Some benchmark programs are peformed to evaluate the I/O performance of the NAS device. Since data recorded in optical disks are usually for reading accesses, our attention is focused on the reading throughput of the device. The experimental results indicate that the I/O performance of our NAS device is excellent.

Polyaniline nanofibers: a unique polymer nanostructure for versatile applications.

PubMed

Li, Dan; Huang, Jiaxing; Kaner, Richard B

2009-01-20

Known for more than 150 years, polyaniline is the oldest and potentially one of the most useful conducting polymers because of its facile synthesis, environmental stability, and simple acid/base doping/dedoping chemistry. Because a nanoform of this polymer could offer new properties or enhanced performance, nanostructured polyaniline has attracted a great deal of interest during the past few years. This Account summarizes our recent research on the syntheses, processing, properties, and applications of polyaniline nanofibers. By monitoring the nucleation behavior of polyaniline, we demonstrate that high-quality nanofibers can be readily produced in bulk quantity using the conventional chemical oxidative polymerization of aniline. The polyaniline nanostructures formed using this simple method have led to a number of exciting discoveries. For example, we can readily prepare aqueous polyaniline colloids by purifying polyaniline nanofibers and controlling the pH. The colloids formed are self-stabilized via electrostatic repulsions without the need for any chemical modification or steric stabilizer, thus providing a simple and environmentally friendly way to process this polymer. An unusual nanoscale photothermal effect called "flash welding", which we discovered with polyaniline nanofibers, has led to the development of new techniques for making asymmetric polymer membranes and patterned nanofiber films and creating polymer-based nanocomposites. We also demonstrate the use of flash-welded polyaniline films for monolithic actuators. Taking advantage of the unique reduction/oxidation chemistry of polyaniline, we can decorate polyaniline nanofibers with metal nanoparticles through in situ reduction of selected metal salts. The resulting polyaniline/metal nanoparticle composites show promise for use in ultrafast nonvolatile memory devices and for chemical catalysis. In addition, the use of polyaniline nanofibers or their composites can significantly enhance the sensitivity, selectivity, and response time of polyaniline-based chemical sensors. By combining straightforward synthesis and composite formation with exceptional solution processability, we have developed a range of new useful functionalities. Further research on nanostructured conjugated polymers holds promise for even more exciting discoveries and intriguing applications.

PS II model based analysis of transient fluorescence yield measured on whole leaves of Arabidopsis thaliana after excitation with light flashes of different energies.

PubMed

Belyaeva, N E; Schmitt, F-J; Paschenko, V Z; Riznichenko, G Yu; Rubin, A B; Renger, G

2011-02-01

Our recently presented PS II model (Belyaeva et al., 2008) was improved in order to permit a consistent simulation of Single Flash Induced Transient Fluorescence Yield (SFITFY) traces that were earlier measured by Steffen et al. (2005) on whole leaves of Arabidopsis (A.) thaliana at four different energies of the actinic flash. As the essential modification, the shape of the actinic flash was explicitly taken into account assuming that an exponentially decaying rate simulates the time dependent excitation of PS II by the 10 ns actinic flash. The maximum amplitude of this excitation exceeds that of the measuring light by 9 orders of magnitude. A very good fit of the SFITFY data was achieved in the time domain from 100 ns to 10s for all actinic flash energies (the maximum energy of 7.5 × 10¹⁶ photons/(cm²flash) is set to 100%, the relative energies of weaker actinic flashes were of ∼8%, 4%, ∼1%). Our model allows the calculation and visualization of the transient PS II redox state populations ranging from the dark adapted state, via excitation energy and electron transfer steps induced by pulse excitation, followed by final relaxation into the stationary state eventually attained under the measuring light. It turned out that the rate constants of electron transfer steps are invariant to intensity of the actinic laser flash. In marked contrast, an increase of the actinic flash energy by more than two orders of magnitude from 5.4×10¹⁴ photons/(cm²flash) to 7.5×10¹⁶ photons/(cm²flash), leads to an increase of the extent of fluorescence quenching due to carotenoid triplet (³Car) formation by a factor of 14 and of the recombination reaction between reduced primary pheophytin (Phe(-)) and P680(+) by a factor of 3 while the heat dissipation in the antenna complex remains virtually constant. The modified PS II model offers new opportunities to compare electron transfer and dissipative parameters for different species (e.g. for the green algae and the higher plant) under varying illumination conditions. Copyright © 2010 Elsevier Ireland Ltd. All rights reserved.

Flash-Fire Propensity and Heat-Release Rate Studies of Improved Fire Resistant Materials

NASA Technical Reports Server (NTRS)

Fewell, L. L.

1978-01-01

Twenty-six improved fire resistant materials were tested for flash-fire propensity and heat release rate properties. The tests were conducted to obtain a descriptive index based on the production of ignitable gases during the thermal degradation process and on the response of the materials under a specific heat load.

A low power flash-FPGA based brain implant micro-system of PID control.

PubMed

Lijuan Xia; Fattah, Nabeel; Soltan, Ahmed; Jackson, Andrew; Chester, Graeme; Degenaar, Patrick

2017-07-01

In this paper, we demonstrate that a low power flash FPGA based micro-system can provide a low power programmable interface for closed-loop brain implant inter- faces. The proposed micro-system receives recording local field potential (LFP) signals from an implanted probe, performs closed-loop control using a first order control system, then converts the signal into an optogenetic control stimulus pattern. Stimulus can be implemented through optoelectronic probes. The long term target is for both fundamental neuroscience applications and for clinical use in treating epilepsy. Utilizing our device, closed-loop processing consumes only 14nJ of power per PID cycle compared to 1.52μJ per cycle for a micro-controller implementation. Compared to an application specific digital integrated circuit, flash FPGA's are inherently programmable.

Luminous Efficiency of Hypervelocity Meteoroid Impacts on the Moon Derived from the 2015 Geminid Meteor Shower

NASA Technical Reports Server (NTRS)

Moser, D. E.; Suggs, R. M.; Ehlert, S. R.

2017-01-01

Meteoroids cannot be observed directly because of their small size. In-situ measurements of the meteoroid environment are rare and have very small collecting areas. The Moon, in contrast, has a large collecting area and therefore can be used as a large meteoroid detector for gram-kilogram sized particles. Meteoroids striking the Moon create an impact flash observable by Earth-based telescopes. Their kinetic energy is converted to luminous energy with some unknown luminous efficiency ?(v), which is likely a function of meteoroid velocity (among other factors). This luminous efficiency is imperative to calculating the kinetic energy and mass of the meteoroid, as well as meteoroid fluxes, and it cannot be determined in the laboratory at meteoroid speeds and sizes due to mechanical constraints. Since laboratory simulations fail to resolve the luminous efficiency problem, observations of the impact flash itself must be utilized. Meteoroids associated with specific meteor showers have known speed and direction, which simplifies the determination of the luminous efficiency. NASA has routinely monitored the Moon for impact flashes since early 2006 [1]. During this time, several meteor showers have produced multiple impact flashes on the Moon, yielding a sufficient sample of impact flashes with which to perform a luminous efficiency analysis similar to that outlined in Bellot Rubio et al. [2, 3] and further described by Moser et al. [4], utilizing Earth-based measurements of the shower flux and mass index. The Geminid meteor shower has produced the most impact flashes in the NASA dataset to date with over 80 detections. More than half of these Geminids were recorded in 2015 (locations pictured in Fig. 1), and may represent the largest single-shower impact flash sample known. This work analyzes the 2015 Geminid lunar impacts and calculates their luminous efficiency. The luminous efficiency is then applied to calculate the kinetic energies and mass-es of these shower meteoroids.

A comparison among several P300 brain-computer interface speller paradigms.

PubMed

Fazel-Rezai, Reza; Gavett, Scott; Ahmad, Waqas; Rabbi, Ahmed; Schneider, Eric

2011-10-01

Since the brain-computer interface (BCI) speller was first proposed by Farwell and Donchin, there have been modifications in the visual aspects of P300 paradigms. Most of the changes are based on the original matrix format such as changes in the number of rows and columns, font size, flash/ blank time, and flash order. The improvement in the resulting accuracy and speed of such systems has always been the ultimate goal. In this study, we have compared several different speller paradigms including row-column, single character flashing, and two region-based paradigms which are not based on the matrix format. In the first region-based paradigm, at the first level, characters and symbols are distributed over seven regions alphabetically, while in the second region-based paradigm they are distributed in the most frequently used order. At the second level, each one of the regions is further subdivided into seven subsets. The experimental results showed that the average accuracy and user acceptability for two region-based paradigms were higher than those for traditional paradigms such as row/column and single character.

Breaking continuous flash suppression: competing for consciousness on the pre-semantic battlefield

PubMed Central

Gayet, Surya; Van der Stigchel, Stefan; Paffen, Chris L. E.

2014-01-01

Traditionally, interocular suppression is believed to disrupt high-level (i.e., semantic or conceptual) processing of the suppressed visual input. The development of a new experimental paradigm, breaking continuous flash suppression (b-CFS), has caused a resurgence of studies demonstrating high-level processing of visual information in the absence of visual awareness. In this method the time it takes for interocularly suppressed stimuli to breach the threshold of visibility, is regarded as a measure of access to awareness. The aim of the current review is twofold. First, we provide an overview of the literature using this b-CFS method, while making a distinction between two types of studies: those in which suppression durations are compared between different stimulus classes (such as upright faces versus inverted faces), and those in which suppression durations are compared for stimuli that either match or mismatch concurrently available information (such as a colored target that either matches or mismatches a color retained in working memory). Second, we aim at dissociating high-level processing from low-level (i.e., crude visual) processing of the suppressed stimuli. For this purpose, we include a thorough review of the control conditions that are used in these experiments. Additionally, we provide recommendations for proper control conditions that we deem crucial for disentangling high-level from low-level effects. Based on this review, we argue that crude visual processing suffices for explaining differences in breakthrough times reported using b-CFS. As such, we conclude that there is as yet no reason to assume that interocularly suppressed stimuli receive full semantic analysis. PMID:24904476

Report on in-situ studies of flash sintering of uranium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raftery, Alicia Marie

Flash sintering is a novel type of field assisted sintering that uses an electric field and current to provide densification of materials on very short time scales. The potential for field assisted sintering techniques to be used in producing nuclear fuel is gaining recognition due to the potential economic benefits and improvements in material properties. The flash sintering behavior has so far been linked to applied and material parameters, but the underlying mechanisms active during flash sintering have yet to be identified. This report summarizes the efforts to investigate flash sintering of uranium dioxide using dilatometer studies at Los Alamosmore » National Laboratory and two separate sets of in-situ studies at Brookhaven National Laboratory’s NSLS-II XPD-1 beamline. The purpose of the dilatometer studies was to understand individual parameter (applied and material) effects on the flash behavior and the purpose of the in-situ studies was to better understand the mechanisms active during flash sintering. As far as applied parameters, it was found that stoichiometry, or oxygen-to-metal ratio, has a significant effect on the flash behavior (time to flash and speed of flash). Composite systems were found to have degraded sintering behavior relative to pure UO 2. The critical field studies are complete for UO 2.00 and will be analyzed against an existing model for comparison. The in-situ studies showed that the strength of the field and current are directly related to the sample temperature, with temperature-driven phase changes occurring at high values. The existence of an ‘incubation time’ has been questioned, due to a continuous change in lattice parameter values from the moment that the field is applied. Some results from the in-situ experiments, which should provide evidence regarding ion migration, are still being analyzed. Some preliminary conclusions can be made from these results with regard to using field assisted sintering to fabricate nuclear fuel. First, the pure UO 2-based system shows promising behavior with flash sintering, but composite systems are likely to show better sintering behavior with spark plasma sintering. Efforts to develop these methods should therefore be tailored towards the likelihood of success. Additionally, modeling is a rapidly developing aspect of current flash sintering research and should be used in parallel with experiments. Ultimately, ongoing flash sintering studies on various materials, like those summarized in this report, are rapidly contributing to the feasibility of controlling this method for use in the future.« less

Effect of stirring on the safety of flammable liquid mixtures.

PubMed

Liaw, Horng-Jang; Gerbaud, Vincent; Chen, Chan-Cheng; Shu, Chi-Min

2010-05-15

Flash point is the most important variable employed to characterize fire and explosion hazard of liquids. The models developed for predicting the flash point of partially miscible mixtures in the literature to date are all based on the assumption of liquid-liquid equilibrium. In real-world environments, however, the liquid-liquid equilibrium assumption does not always hold, such as the collection or accumulation of waste solvents without stirring, where complete stirring for a period of time is usually used to ensure the liquid phases being in equilibrium. This study investigated the effect of stirring on the flash-point behavior of binary partially miscible mixtures. Two series of partially miscible binary mixtures were employed to elucidate the effect of stirring. The first series was aqueous-organic mixtures, including water+1-butanol, water+2-butanol, water+isobutanol, water+1-pentanol, and water+octane; the second series was the mixtures of two flammable solvents, which included methanol+decane, methanol+2,2,4-trimethylpentane, and methanol+octane. Results reveal that for binary aqueous-organic solutions the flash-point values of unstirred mixtures were located between those of the completely stirred mixtures and those of the flammable component. Therefore, risk assessment could be done based on the flammable component flash-point value. However, for the assurance of safety, it is suggested to completely stir those mixtures before handling to reduce the risk. Copyright (c) 2010 Elsevier B.V. All rights reserved.

Are Categorical Spatial Relations Encoded by Shifting Visual Attention between Objects?

PubMed Central

Uttal, David; Franconeri, Steven

2016-01-01

Perceiving not just values, but relations between values, is critical to human cognition. We tested the predictions of a proposed mechanism for processing categorical spatial relations between two objects—the shift account of relation processing—which states that relations such as ‘above’ or ‘below’ are extracted by shifting visual attention upward or downward in space. If so, then shifts of attention should improve the representation of spatial relations, compared to a control condition of identity memory. Participants viewed a pair of briefly flashed objects and were then tested on either the relative spatial relation or identity of one of those objects. Using eye tracking to reveal participants’ voluntary shifts of attention over time, we found that when initial fixation was on neither object, relational memory showed an absolute advantage for the object following an attention shift, while identity memory showed no advantage for either object. This result is consistent with the shift account of relation processing. When initial fixation began on one of the objects, identity memory strongly benefited this fixated object, while relational memory only showed a relative benefit for objects following an attention shift. This result is also consistent, although not as uniquely, with the shift account of relation processing. Taken together, we suggest that the attention shift account provides a mechanistic explanation for the overall results. This account can potentially serve as the common mechanism underlying both linguistic and perceptual representations of spatial relations. PMID:27695104

Are Categorical Spatial Relations Encoded by Shifting Visual Attention between Objects?

PubMed

Yuan, Lei; Uttal, David; Franconeri, Steven

2016-01-01

Perceiving not just values, but relations between values, is critical to human cognition. We tested the predictions of a proposed mechanism for processing categorical spatial relations between two objects-the shift account of relation processing-which states that relations such as 'above' or 'below' are extracted by shifting visual attention upward or downward in space. If so, then shifts of attention should improve the representation of spatial relations, compared to a control condition of identity memory. Participants viewed a pair of briefly flashed objects and were then tested on either the relative spatial relation or identity of one of those objects. Using eye tracking to reveal participants' voluntary shifts of attention over time, we found that when initial fixation was on neither object, relational memory showed an absolute advantage for the object following an attention shift, while identity memory showed no advantage for either object. This result is consistent with the shift account of relation processing. When initial fixation began on one of the objects, identity memory strongly benefited this fixated object, while relational memory only showed a relative benefit for objects following an attention shift. This result is also consistent, although not as uniquely, with the shift account of relation processing. Taken together, we suggest that the attention shift account provides a mechanistic explanation for the overall results. This account can potentially serve as the common mechanism underlying both linguistic and perceptual representations of spatial relations.

A flash-lamp based device for fluorescence detection and identification of individual pollen grains.

PubMed

Kiselev, Denis; Bonacina, Luigi; Wolf, Jean-Pierre

2013-03-01

We present a novel optical aerosol particle detector based on Xe flash lamp excitation and spectrally resolved fluorescence acquisition. We demonstrate its performances on three natural pollens acquiring in real-time scattering intensity at two wavelengths, sub-microsecond time-resolved scattering traces of the particles' passage in the focus, and UV-excited fluorescence spectra. We show that the device gives access to a rather specific detection of the bioaerosol particles.

Lunar Impact Flash Locations from NASA's Lunar Impact Monitoring Program

NASA Technical Reports Server (NTRS)

Moser, D. E.; Suggs, R. M.; Kupferschmidt, L.; Feldman, J.

2015-01-01

Meteoroids are small, natural bodies traveling through space, fragments from comets, asteroids, and impact debris from planets. Unlike the Earth, which has an atmosphere that slows, ablates, and disintegrates most meteoroids before they reach the ground, the Moon has little-to-no atmosphere to prevent meteoroids from impacting the lunar surface. Upon impact, the meteoroid's kinetic energy is partitioned into crater excavation, seismic wave production, and the generation of a debris plume. A flash of light associated with the plume is detectable by instruments on Earth. Following the initial observation of a probable Taurid impact flash on the Moon in November 2005,1 the NASA Meteoroid Environment Office (MEO) began a routine monitoring program to observe the Moon for meteoroid impact flashes in early 2006, resulting in the observation of over 330 impacts to date. The main objective of the MEO is to characterize the meteoroid environment for application to spacecraft engineering and operations. The Lunar Impact Monitoring Program provides information about the meteoroid flux in near-Earth space in a size range-tens of grams to a few kilograms-difficult to measure with statistical significance by other means. A bright impact flash detected by the program in March 2013 brought into focus the importance of determining the impact flash location. Prior to this time, the location was estimated to the nearest half-degree by visually comparing the impact imagery to maps of the Moon. Better accuracy was not needed because meteoroid flux calculations did not require high-accuracy impact locations. But such a bright event was thought to have produced a fresh crater detectable from lunar orbit by the NASA spacecraft Lunar Reconnaissance Orbiter (LRO). The idea of linking the observation of an impact flash with its crater was an appealing one, as it would validate NASA photometric calculations and crater scaling laws developed from hypervelocity gun testing. This idea was dependent upon LRO finding a fresh impact crater associated with one of the impact flashes recorded by Earth-based instruments, either the bright event of March 2013 or any other in the database of impact observations. To find the crater, LRO needed an accurate area to search. This Technical Memorandum (TM) describes the geolocation technique developed to accurately determine the impact flash location, and by association, the location of the crater, thought to lie directly beneath the brightest portion of the flash. The workflow and software tools used to geolocate the impact flashes are described in detail, along with sources of error and uncertainty and a case study applying the workflow to the bright impact flash in March 2013. Following the successful geolocation of the March 2013 flash, the technique was applied to all impact flashes detected by the MEO between November 7, 2005, and January 3, 2014.

Technology of uncooled fast polycrystalline PbSe focal plane arrays in systems for muzzle flash detection

NASA Astrophysics Data System (ADS)

Kastek, Mariusz; PiÄ tkowski, Tadeusz; Polakowski, Henryk; Barela, Jaroslaw; Firmanty, Krzysztof; Trzaskawka, Piotr; Vergara, German; Linares, Rodrigo; Gutierrez, Raul; Fernandez, Carlos; Montojo Supervielle, Maria Teresa

2014-05-01

The paper presents some aspects of muzzle flash detection using low resolution polycrystalline PbSe 32×32 and 80×80 detectors FPA operating at room temperature (uncooled performance). These sensors, which detect in MWIR (3 - 5 microns region) and are manufactured using proprietary technology from New Infrared Technologies (VPD PbSe - Vapor Phase Deposition of polycrystalline PbSe), can be applied to muzzle flash detection. The system based in the uncooled 80×80 FPA monolithically integrated with the CMOS readout circuitry has allowed image recording with frame rates over 2000 Hz (true snapshot acquisition), whereas the lower density, uncooled 32×32 FPA is suitable for being used in low cost infrared imagers sensitive in the MWIR band with frame rates above 1000 Hz. The FPA detector, read-out electronics and processing electronics (allows the implementation of some algorithms for muzzle flash detection) of both systems are presented. The systems have been tested at field test ground. Results of detection range measurement with two types of optical systems (wide and narrow field of view) have been shown. The theoretical analysis of possibility detection of muzzle flash and initial results of testing of some algorithms for muzzle flash detection have been presented too.

Establishing a rainfall threshold for flash flood warnings in China's mountainous areas based on a distributed hydrological model

NASA Astrophysics Data System (ADS)

Miao, Qinghua; Yang, Dawen; Yang, Hanbo; Li, Zhe

2016-10-01

Flash flooding is one of the most common natural hazards in China, particularly in mountainous areas, and usually causes heavy damage and casualties. However, the forecasting of flash flooding in mountainous regions remains challenging because of the short response time and limited monitoring capacity. This paper aims to establish a strategy for flash flood warnings in mountainous ungauged catchments across humid, semi-humid and semi-arid regions of China. First, we implement a geomorphology-based hydrological model (GBHM) in four mountainous catchments with drainage areas that ranges from 493 to 1601 km2. The results show that the GBHM can simulate flash floods appropriately in these four study catchments. We propose a method to determine the rainfall threshold for flood warning by using frequency analysis and binary classification based on long-term GBHM simulations that are forced by historical rainfall data to create a practically easy and straightforward approach for flash flood forecasting in ungauged mountainous catchments with drainage areas from tens to hundreds of square kilometers. The results show that the rainfall threshold value decreases significantly with increasing antecedent soil moisture in humid regions, while this value decreases slightly with increasing soil moisture in semi-humid and semi-arid regions. We also find that accumulative rainfall over a certain time span (or rainfall over a long time span) is an appropriate threshold for flash flood warnings in humid regions because the runoff is dominated by excess saturation. However, the rainfall intensity (or rainfall over a short time span) is more suitable in semi-humid and semi-arid regions because excess infiltration dominates the runoff in these regions. We conduct a comprehensive evaluation of the rainfall threshold and find that the proposed method produces reasonably accurate flash flood warnings in the study catchments. An evaluation of the performance at uncalibrated interior points in the four gauged catchments provides results that are indicative of the expected performance at ungauged locations. We also find that insufficient historical data lengths (13 years with a 5-year flood return period in this study) may introduce uncertainty in the estimation of the flood/rainfall threshold because of the small number of flood events that are used in binary classification. A data sample that contains enough flood events (10 events suggested in the present study) that exceed the threshold value is necessary to obtain acceptable results from binary classification.

Multispectral signature analysis measurements of selected sniper rifles and small arms

NASA Astrophysics Data System (ADS)

Law, David B.; Carapezza, Edward M.; Csanadi, Christina J.; Edwards, Gerald D.; Hintz, Todd M.; Tong, Ronald M.

1997-02-01

During October 1995 - June 1996, the Naval Command, Control and Ocean Surveillance Center RDT&E Division (NRaD), under sponsorship from Defense Advanced Research Projects Agency (DARPA), conducted an intensive series of multi-spectral signature analyses of typical sniper weapons. Multi-spectral signatures of the muzzle flashes from rifles and pistols and some imagery of the bullets in flight were collected. Multi- spectral signatures of the muzzle flash were collected in the infrared (2.5 - 14.5 microns), visible -- near-IR (400 - 1200 nanometers), and the ultra-violet (185 - 400 nanometers) wavelength regions. These measurements consisted of high spectral resolution (0.0159 micron) measurements of the spectral radiance of the muzzle flash. A time history plot of the muzzle flash as it evolves just forward of the end of the muzzle is provided. These measurements were performed with a CI Systems Model SR5000 IR/Visible spectroradiometer and an Ocean Optics Model PC1000 UV spectroradiometer. Muzzle flash infrared imagery is provided to show the effect that specific muzzle breaks have on the resulting muzzle flash. The following set of sniper weapons were included in this test: AK-47, SKS, M16A2, M-14, FN-FAL, SMLE IIa, 03 Springfield, SVD Dragunov, 50 caliber McMillan, and a 45 caliber ACP pistol. The results of this signature analysis show that important measurable electro-optical differences do exist between all these weapons in terms of spectral radiance of the flash, spectral content of the gun powders, and spectral shapes/geometries of the muzzle flashes. These differences were sufficient such that, after a more complete data base is collected, it will be possible to develop a passive electro-optical weapon and ammunition identifier.

Determination of the Global-Average Charge Moment of a Lightning Flash Using Schumann Resonances and the LIS/OTD Lightning Data

NASA Astrophysics Data System (ADS)

Boldi, Robert; Williams, Earle; Guha, Anirban

2018-01-01

In this paper, we use (1) the 20 year record of Schumann resonance (SR) signals measured at West Greenwich Rhode Island, USA, (2) the 19 year Lightning Imaging Sensor (LIS)/Optical Transient Detector (OTD) lightning data, and (3) the normal mode equations for a uniform cavity model to quantify the relationship between the observed Schumann resonance modal intensity and the global-average vertical charge moment change M (C km) per lightning flash. This work, by integrating SR measurements with satellite-based optical measurements of global flash rate, accomplishes this quantification for the first time. To do this, we first fit the intensity spectra of the observed SR signals to an eight-mode, three parameter per mode, (symmetric) Lorentzian line shape model. Next, using the LIS/OTD lightning data and the normal mode equations for a uniform cavity model, we computed the expected climatological-daily-average intensity spectra. We then regressed the observed modal intensity values against the expected modal intensity values to find the best fit value of the global-average vertical charge moment change of a lightning flash (M) to be 41 C km per flash with a 99% confidence interval of ±3.9 C km per flash, independent of mode. Mode independence argues that the model adequately captured the modal intensity, the most important fit parameter herein considered. We also tested this relationship for the presence of residual modal intensity at zero lightning flashes per second and found no evidence that modal intensity is significantly different than zero at zero lightning flashes per second, setting an upper limit to the amount of nonlightning contributions to the observed modal intensity.

Understanding the creative processes of phenomenological research: The life philosophy of Løgstrup.

PubMed

Norlyk, Annelise; Dreyer, Pia; Haahr, Anita; Martinsen, Bente

2011-01-01

The creative processes of understanding patients' experiences in phenomenological research are difficult to articulate. Drawing on life philosophy as represented by the Danish philosopher K.E. Løgstrup (1905-1981), this article aims to illustrate Løgstrup's thinking as a way to elaborate the creation of cognition and understanding of patients' experiences. We suggest that Løgstrup's thoughts on sensation can add new dimensions to an increased understanding of the creative process of phenomenological research, and that his thinking can be seen as an epistemological ground for these processes. We argue with Løgstrup that sense-based impressions can facilitate an flash of insight, i.e., the spontaneous, intuitive flash of an idea. Løgstrup stresses that an "flash of insight" is an important source in the creation of cognition and understanding. Relating to three empirical phenomenological studies of patients' experiences, we illustrate how the notions of impression and flash of insight can add new dimensions to increased understanding of the creative processes in phenomenological research that have previously not been discussed. We illustrate that sense-based impressions can facilitate creative flash of insights that open for understanding of patients' experiences in the research process as well as in the communication of the findings. The nature of impression and flash of insight and their relevance in the creation of cognition and understanding contributes to the sparse descriptions in the methodological phenomenological research literature of the creative processes of this research. An elaboration of the creative processes in phenomenological research can help researchers to articulate these processes. Thus, Løgstrup's life philosophy has proven to be valuable in adding new dimensions to phenomenological empirical research as well as embracing lived experience.

Towards flash-flood prediction in the dry Dead Sea region utilizing radar rainfall information

NASA Astrophysics Data System (ADS)

Morin, Efrat; Jacoby, Yael; Navon, Shilo; Bet-Halachmi, Erez

2009-07-01

Flash-flood warning models can save lives and protect various kinds of infrastructure. In dry climate regions, rainfall is highly variable and can be of high-intensity. Since rain gauge networks in such areas are sparse, rainfall information derived from weather radar systems can provide useful input for flash-flood models. This paper presents a flash-flood warning model which utilizes radar rainfall data and applies it to two catchments that drain into the dry Dead Sea region. Radar-based quantitative precipitation estimates (QPEs) were derived using a rain gauge adjustment approach, either on a daily basis (allowing the adjustment factor to change over time, assuming available real-time gauge data) or using a constant factor value (derived from rain gauge data) over the entire period of the analysis. The QPEs served as input for a continuous hydrological model that represents the main hydrological processes in the region, namely infiltration, flow routing and transmission losses. The infiltration function is applied in a distributed mode while the routing and transmission loss functions are applied in a lumped mode. Model parameters were found by calibration based on the 5 years of data for one of the catchments. Validation was performed for a subsequent 5-year period for the same catchment and then for an entire 10-year record for the second catchment. The probability of detection and false alarm rates for the validation cases were reasonable. Probabilistic flash-flood prediction is presented applying Monte Carlo simulations with an uncertainty range for the QPEs and model parameters. With low probability thresholds, one can maintain more than 70% detection with no more than 30% false alarms. The study demonstrates that a flash-flood warning model is feasible for catchments in the area studied.

Towards flash flood prediction in the dry Dead Sea region utilizing radar rainfall information

NASA Astrophysics Data System (ADS)

Morin, E.; Jacoby, Y.; Navon, S.; Bet-Halachmi, E.

2009-04-01

Flash-flood warning models can save lives and protect various kinds of infrastructure. In dry climate regions, rainfall is highly variable and can be of high-intensity. Since rain gauge networks in such areas are sparse, rainfall information derived from weather radar systems can provide useful input for flash-flood models. This paper presents a flash-flood warning model utilizing radar rainfall data and applies it to two catchments that drain into the dry Dead Sea region. Radar-based quantitative precipitation estimates (QPEs) were derived using a rain gauge adjustment approach, either on a daily basis (allowing the adjustment factor to change over time, assuming available real-time gauge data) or using a constant factor value (derived from rain gauge data) over the entire period of the analysis. The QPEs served as input for a continuous hydrological model that represents the main hydrological processes in the region, namely infiltration, flow routing and transmission losses. The infiltration function is applied in a distributed mode while the routing and transmission loss functions are applied in a lumped mode. Model parameters were found by calibration based on five years of data for one of the catchments. Validation was performed for a subsequent five-year period for the same catchment and then for an entire ten year record for the second catchment. The probability of detection and false alarm rates for the validation cases were reasonable. Probabilistic flash-flood prediction is presented applying Monte Carlo simulations with an uncertainty range for the QPEs and model parameters. With low probability thresholds, one can maintain more than 70% detection with no more than 30% false alarms. The study demonstrates that a flash-flood-warning model is feasible for catchments in the area studied.

Understanding the creative processes of phenomenological research: The life philosophy of Løgstrup

PubMed Central

Dreyer, Pia; Haahr, Anita; Martinsen, Bente

2011-01-01

The creative processes of understanding patients’ experiences in phenomenological research are difficult to articulate. Drawing on life philosophy as represented by the Danish philosopher K.E. Løgstrup (1905–1981), this article aims to illustrate Løgstrup's thinking as a way to elaborate the creation of cognition and understanding of patients’ experiences. We suggest that Løgstrup's thoughts on sensation can add new dimensions to an increased understanding of the creative process of phenomenological research, and that his thinking can be seen as an epistemological ground for these processes. We argue with Løgstrup that sense-based impressions can facilitate an flash of insight, i.e., the spontaneous, intuitive flash of an idea. Løgstrup stresses that an “flash of insight” is an important source in the creation of cognition and understanding. Relating to three empirical phenomenological studies of patients’ experiences, we illustrate how the notions of impression and flash of insight can add new dimensions to increased understanding of the creative processes in phenomenological research that have previously not been discussed. We illustrate that sense-based impressions can facilitate creative flash of insights that open for understanding of patients’ experiences in the research process as well as in the communication of the findings. The nature of impression and flash of insight and their relevance in the creation of cognition and understanding contributes to the sparse descriptions in the methodological phenomenological research literature of the creative processes of this research. An elaboration of the creative processes in phenomenological research can help researchers to articulate these processes. Thus, Løgstrup's life philosophy has proven to be valuable in adding new dimensions to phenomenological empirical research as well as embracing lived experience. PMID:22076123

A non-ideal model for predicting the effect of dissolved salt on the flash point of solvent mixtures.

PubMed

Liaw, Horng-Jang; Wang, Tzu-Ai

2007-03-06

Flash point is one of the major quantities used to characterize the fire and explosion hazard of liquids. Herein, a liquid with dissolved salt is presented in a salt-distillation process for separating close-boiling or azeotropic systems. The addition of salts to a liquid may reduce fire and explosion hazard. In this study, we have modified a previously proposed model for predicting the flash point of miscible mixtures to extend its application to solvent/salt mixtures. This modified model was verified by comparison with the experimental data for organic solvent/salt and aqueous-organic solvent/salt mixtures to confirm its efficacy in terms of prediction of the flash points of these mixtures. The experimental results confirm marked increases in liquid flash point increment with addition of inorganic salts relative to supplementation with equivalent quantities of water. Based on this evidence, it appears reasonable to suggest potential application for the model in assessment of the fire and explosion hazard for solvent/salt mixtures and, further, that addition of inorganic salts may prove useful for hazard reduction in flammable liquids.

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

PubMed Central

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-01-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories. PMID:28513590

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-05-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

NASA's 3D Flight Computer for Space Applications

NASA Technical Reports Server (NTRS)

Alkalai, Leon

2000-01-01

The New Millennium Program (NMP) Integrated Product Development Team (IPDT) for Microelectronics Systems was planning to validate a newly developed 3D Flight Computer system on its first deep-space flight, DS1, launched in October 1998. This computer, developed in the 1995-97 time frame, contains many new computer technologies previously never used in deep-space systems. They include: advanced 3D packaging architecture for future low-mass and low-volume avionics systems; high-density 3D packaged chip-stacks for both volatile and non-volatile mass memory: 400 Mbytes of local DRAM memory, and 128 Mbytes of Flash memory; high-bandwidth Peripheral Component Interface (Per) local-bus with a bridge to VME; high-bandwidth (20 Mbps) fiber-optic serial bus; and other attributes, such as standard support for Design for Testability (DFT). Even though this computer system did not complete on time for delivery to the DS1 project, it was an important development along a technology roadmap towards highly integrated and highly miniaturized avionics systems for deep-space applications. This continued technology development is now being performed by NASA's Deep Space System Development Program (also known as X2000) and within JPL's Center for Integrated Space Microsystems (CISM).

Measuring hot flash phenomenonology using ambulatory prospective digital diaries

PubMed Central

Fisher, William I.; Thurston, Rebecca C.

2016-01-01

Objective This study provides the description, protocol, and results from a novel prospective ambulatory digital hot flash phenomenon diary. Methods This study included 152 midlife women with daily hot flashes who completed an ambulatory electronic hot flash diary continuously for the waking hours of 3 consecutive days. In this diary, women recorded their hot flashes and accompanying characteristics and associations as the hot flashes occurred. Results Self-reported hot flash severity on the digital diaries indicated that the majority of hot flashes were rated as mild (41.3%) or moderate (43.7%). Severe (13.1%) and very severe (1.8%) hot flashes were less common. Hot flash bother ratings were rated as mild (43%), or moderate (33.5%), with fewer hot flashes reported bothersome (17.5%) or very bothersome (6%). The majority of hot flashes were reported as occurring on the on the face (78.9%), neck (74.7%), and chest (61.3%). Prickly skin was reported concurrently with 32% of hot flashes, 7% with anxiety and 5% with nausea. A novel finding, 38% of hot flashes were accompanied by a premonitory aura. Conclusion A prospective electronic digital hot flash diary allows for a more precise quantitation of hot flashes while overcoming many of the limitations of commonly employed retrospective questionnaires and paper diaries. Unique insights into the phenomenology, loci and associated characteristics of hot flashes were obtained using this device. The digital hot flash phenomenology diary is recommended for future ambulatory studies of hot flashes as a prospective measure of the hot flash experience. PMID:27404030

Measuring hot flash phenomenonology using ambulatory prospective digital diaries.

PubMed

Fisher, William I; Thurston, Rebecca C

2016-11-01

This study provides the description, protocol, and results from a novel prospective ambulatory digital hot flash phenomenon diary. This study included 152 midlife women with daily hot flashes who completed an ambulatory electronic hot flash diary continuously for the waking hours of three consecutive days. In this diary, women recorded their hot flashes and accompanying characteristics and associations as the hot flashes occurred. Self-reported hot flash severity on the digital diaries indicated that the majority of hot flashes were rated as mild (41.3%) or moderate (43.7%). Severe (13.1%) and very severe (1.8%) hot flashes were less common. Hot flash bother ratings were rated as mild (43%), or moderate (33.5%), with fewer hot flashes reported bothersome (17.5%) or very bothersome (6%). The majority of hot flashes were reported as occurring on the face (78.9%), neck (74.7%), and chest (61.3%). Of all reported hot flashes, 32% occurred concurrently with prickly skin, 7% with anxiety, and 5% with nausea. A novel finding from the study was that 38% of hot flashes were accompanied by a premonitory aura. A prospective electronic digital hot flash diary allows for a more precise quantitation of hot flashes while overcoming many of the limitations of commonly used retrospective questionnaires and paper diaries. Unique insights into the phenomenology, loci, and associated characteristics of hot flashes were obtained using this device. The digital hot flash phenomenology diary is recommended for future ambulatory studies of hot flashes as a prospective measure of the hot flash experience.

Learning Rates and Known-to-Unknown Flash-Card Ratios: Comparing Effectiveness While Holding Instructional Time Constant

ERIC Educational Resources Information Center

Forbes, Bethany E.; Skinner, Christopher H.; Black, Michelle P.; Yaw, Jared; Booher, Joshua; Delisle, Jean

2013-01-01

Using alternating treatments designs, we compared learning rates across 2 computer-based flash-card interventions (3?min each): a traditional drill intervention with 15 unknown words and an interspersal intervention with 12 known words and 3 unknown words. Each student acquired more words under the traditional drill intervention. Discussion…

Randomised controlled trial comparing hypnotherapy versus gabapentin for the treatment of hot flashes in breast cancer survivors: a pilot study

PubMed Central

MacLaughlan David, Shannon; Salzillo, Sandra; Bowe, Patrick; Scuncio, Sandra; Malit, Bridget; Raker, Christina; Gass, Jennifer S; Granai, C O; Dizon, Don S

2013-01-01

Objectives To compare the efficacy of hypnotherapy versus gabapentin for the treatment of hot flashes in breast cancer survivors, and to evaluate the feasibility of conducting a clinical trial comparing a drug with a complementary or alternative method (CAM). Design Prospective randomised trial. Setting Breast health centre of a tertiary care centre. Participants 15 women with a personal history of breast cancer or an increased risk of breast cancer who reported at least one daily hot flash. Interventions Gabapentin 900 mg daily in three divided doses (control) compared with standardised hypnotherapy. Participation lasted 8 weeks. Outcome measures The primary endpoints were the number of daily hot flashes and hot flash severity score (HFSS). The secondary endpoint was the Hot Flash Related Daily Interference Scale (HFRDIS). Results 27 women were randomised and 15 (56%) were considered evaluable for the primary endpoint (n=8 gabapentin, n=7 hypnotherapy). The median number of daily hot flashes at enrolment was 4.5 in the gabapentin arm and 5 in the hypnotherapy arm. HFSS scores were 7.5 in the gabapentin arm and 10 in the hypnotherapy arm. After 8 weeks, the median number of daily hot flashes was reduced by 33.3% in the gabapentin arm and by 80% in the hypnotherapy arm. The median HFSS was reduced by 33.3% in the gabapentin arm and by 85% in the hypnotherapy arm. HFRDIS scores improved by 51.6% in the gabapentin group and by 55.2% in the hypnotherapy group. There were no statistically significant differences between groups. Conclusions Hypnotherapy and gabapentin demonstrate efficacy in improving hot flashes. A definitive trial evaluating traditional interventions against CAM methods is feasible, but not without challenges. Further studies aimed at defining evidence-based recommendations for CAM are necessary. Trial registration clinicaltrials.gov (NCT00711529). PMID:24022390

Therapeutic options for the management of hot flashes in breast cancer survivors: an evidence-based review.

PubMed

Bordeleau, Louise; Pritchard, Kathleen; Goodwin, Pamela; Loprinzi, Charles

2007-02-01

Women with breast cancer may experience treatment-induced menopausal symptoms or natural menopause. Menopausal symptoms, particularly hot flashes, are reported at a high frequency in this group and tend to be more severe, distressing, and of greater duration than in controls. Because of the contribution of sex hormones to breast cancer, the use of hormonal agents for the control of hot flashes is problematic in these women. Safer nonhormonal alternatives are recommended for this patient group. This was a systematic review of the therapeutic options for the treatment of hot flashes in breast cancer survivors. MEDLINE was searched from 1990 to July 2006 using the disease-specific term breast neoplasms and the subheadings menopause and hot flashes. EMBASE was searched from 1990 to March 2006 using the disease-specific subject headings breast tumor/ breast cancer and menopause and the key word hot flashes. The reference lists of the identified articles and relevant review articles were examined for additional publications. Pertinent articles and abstracts of large randomized controlled trials focusing on the treatment of hot flashes in breast cancer survivors were selected for review. Pilot studies were excluded. A number of nonpharmacologic approaches are available for the treatment of hot flashes in breast cancer survivors, although they appear to be of limited effectiveness. Complementary alternative medicine therapies and vitamin E have been found to have modest effectiveness at best, and data on their long-term safety are not available. Centrally active agents such as the antidepressants venlafaxine and paroxetine and the anti seizure agent gabapentin have shown clinical effectiveness and appear to be reasonably well tolerated in this population. Centrally active agents (eg, venlafaxine, paroxetine, gabapentin) are regarded as the most promising nonhormonal treatments for hot flashes in breast cancer survivors. Nonpharmacologic and complementary alternative medicine therapies have limited effectiveness.

Design rules for phase-change materials in data storage applications.

PubMed

Lencer, Dominic; Salinga, Martin; Wuttig, Matthias

2011-05-10

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A LIS Validation Study at the KSC-ER using LDAR and Field Mill Data

NASA Technical Reports Server (NTRS)

Koshak, William J.; Christian, Hugh J.; Krider, E. Philip

1999-01-01

The chance of having the TRMM satellite pass over east central Florida when there is lightning over the NASA Kennedy Space Center (KSC) and USAF Eastern Range (ER) is small; however, such a condition did occur on September 21, 1998 (Day 264). Starting at about 20:40 GMT, the Lightning Imaging Sensor (LIS) reported 5 flashes during a 90 second interval that the KSC-ER was within the sensor field of view. Ground-based instrumentation, the Lightning Detection and Ranging (LDAR) system and a network of electric field mills (FM), detected 6 flashes in the same interval. In this paper, we will compare the times and locations of the optical pulses that were detected by LIS with the times and locations of RF sources (LDAR) and the charges that were deposited by the flash (FM network). We will show that LIS responded to all flashes that the LDAR and FM network detected; however, two discharges that were separated by less than 1 second in time and by about 10 km in space were grouped as one flash by the LIS data processing algorithm. In spite of the fact that all flashes occurred near the edge of the LIS field of view, the locations of the LIS events were consistent with both the LDAR and FM locations (the latter are usually within 1-2 kilometers of each other and often are co-located). Two of the 5 flashes reported by LIS were shifted north by about 8 km from the corresponding LDAR and FM locations. The LIS flash times tended to be after the first LDAR pulse was detected and before the last, and the integrated light signal (per LIS event) was surprisingly constant over the 5 flashes that were detected by LIS. In the future, we plan to study more correlated events and will try to determine whether and how the LIS light signal is related to the charge transfer in the flash and/or the number and spatial extent of RF sources.

The Triple-Flash Illusion Reveals a Driving Role of Alpha-Band Reverberations in Visual Perception.

PubMed

Gulbinaite, Rasa; İlhan, Barkın; VanRullen, Rufin

2017-07-26

The modulatory role of spontaneous brain oscillations on perception of threshold-level stimuli is well established. Here, we provide evidence that alpha-band (∼10 Hz) oscillations not only modulate perception of threshold-level sensory inputs but also can drive perception and generate percepts without a physical stimulus being present. We used the "triple-flash" illusion: Occasional perception of three flashes when only two spatially coincident veridical ones, separated by ∼100 ms, are presented. The illusion was proposed to result from superposition of two hypothetical oscillatory impulse response functions generated in response to each flash: When the delay between flashes matches the period of the oscillation, the superposition enhances a later part of the oscillation that is normally damped; when this enhancement crosses perceptual threshold, a third flash is erroneously perceived (Bowen, 1989). In Experiment 1, we varied stimulus onset asynchrony and validated Bowen's theory: The optimal stimulus onset asynchrony for illusion to occur was correlated, across human subjects (both genders), with the subject-specific impulse response function period determined from a separate EEG experiment. Experiment 2 revealed that prestimulus parietal, but no occipital, alpha EEG phase and power, as well as poststimulus alpha phase-locking, together determine the occurrence of the illusion on a trial-by-trial basis. Thus, oscillatory reverberations create something out of nothing: A third flash where there are only two. SIGNIFICANCE STATEMENT We highlight a novel property of alpha-band (∼10 Hz) oscillations based on three experiments (two EEG and one psychophysics) by demonstrating that alpha-band oscillations do not merely modulate perception, but can also drive perception. We show that human participants report seeing a third flash when only two are presented (the "triple-flash" illusion) most often when the interflash delay matches the period of participant's oscillatory impulse response function reverberating in alpha. Within-subject, the phase and power of ongoing parietal, but not occipital, alpha-band oscillations at the time of the first flash determine illusory percept on a trial-by-trial basis. We revealed a physiologically plausible mechanism that validates and extends the original theoretical account of the triple-flash illusion proposed by Bowen in 1989. Copyright © 2017 the authors 0270-6474/17/377219-12$15.00/0.

Observations of Stratiform Lightning Flashes and Their Microphysical and Kinematic Environments

NASA Technical Reports Server (NTRS)

Lang, Timothy J.; Williams, Earle

2016-01-01

During the Midlatitude Continental Convective Clouds Experiment (MC3E), combined observations of clouds and precipitation were made from airborne and ground-based in situ and remote sensing platforms. These observations were coordinated for multiple mesoscale convective systems (MCSs) that passed over the MC3E domain in northern Oklahoma. Notably, during a storm on 20 May 2011 in situ and remote sensing airborne observations were made near the times and locations of stratiform positive cloud-to-ground (+CG) lightning flashes. These +CGs resulted from extremely large stratiform lightning flashes that were hundreds of km in length and lasted several seconds. This dataset provides an unprecedented look at kinematic and microphysical environments in the vicinity of large, powerful, and long-lived stratiform lightning flashes. We will use this dataset to understand the influence of low liquid water contents (LWCs) in the electrical charging of MCS stratiform regions.

Observations of Stratiform Lightning Flashes and Their Microphysical and Kinematic Environments

NASA Technical Reports Server (NTRS)

Lang, Timothy J.; Williams, Earle

2017-01-01

During the Midlatitude Continental Convective Clouds Experiment (MC3E), combined observations of clouds and precipitation were made from airborne and ground-based in situ and remote sensing platforms. These observations were coordinated for multiple mesoscale convective systems (MCSs) that passed over the MC3E domain in northern Oklahoma. Notably, during a storm on 20 May 2011 in situ and remote sensing airborne observations were made near the times and locations of stratiform positive cloud-to-ground (+CG) lightning flashes. These +CGs resulted from extremely large stratiform lightning flashes that were hundreds of km in length and lasted several seconds. This dataset provides an unprecedented look at kinematic and microphysical environments in the vicinity of large, powerful, and long-lived stratiform lightning flashes. We will use this dataset to understand the influence of low liquid water contents (LWCs) in the electrical charging of MCS stratiform regions.

A Method for Retrieving Ground Flash Fraction from Satellite Lightning Imager Data

NASA Technical Reports Server (NTRS)

Koshak, William J.

2009-01-01

A general theory for retrieving the fraction of ground flashes in N lightning observed by a satellite-based lightning imager is provided. An "exponential model" is applied as a physically reasonable constraint to describe the measured optical parameter distributions, and population statistics (i.e., mean, variance) are invoked to add additional constraints to the retrieval process. The retrieval itself is expressed in terms of a Bayesian inference, and the Maximum A Posteriori (MAP) solution is obtained. The approach is tested by performing simulated retrievals, and retrieval error statistics are provided. The ability to retrieve ground flash fraction has important benefits to the atmospheric chemistry community. For example, using the method to partition the existing satellite global lightning climatology into separate ground and cloud flash climatologies will improve estimates of lightning nitrogen oxides (NOx) production; this in turn will improve both regional air quality and global chemistry/climate model predictions.

Relations among Menopausal Symptoms, Sleep Disturbance and Depressive Symptoms in Midlife

PubMed Central

Brown, Jessica P.; Gallicchio, Lisa; Flaws, Jodi F.; Tracy, J. Kathleen

2009-01-01

Objectives To investigate the relations among hot flashes, other menopausal symptoms, sleep quality and depressive symptoms in midlife women Methods A large population-based cross-sectional study of 639 women (ages 45 to 54 years) consisting of a questionnaire including the Center for Epidemiologic Studies-Depression Scale (CES-D), demographics, health behaviors, menstrual history, and menopausal symptoms Results After controlling for menopausal status, physical activity level, smoking status and current self-reported health status elevated CES-D score is associated with frequent nocturnal hot flashes, frequent trouble sleeping, experiencing hot flashes, nausea, headaches, weakness, visual problems, vaginal discharge, irritability, muscle stiffness, and incontinence. Conclusions The present study found significant links between depressive symptoms and several menopausal symptoms including hot flashes, sleep disturbance, irritability, muscle stiffness, and incontinence after controlling for covariates. These findings suggest that a potential mechanism in which bothersome menopausal symptoms may influence depressed mood during the midlife is through sleep disturbance. PMID:19128903

Efficiently Communicating Rich Heterogeneous Geospatial Data from the FeMO2008 Dive Cruise with FlashMap on EarthRef.org

NASA Astrophysics Data System (ADS)

Minnett, R. C.; Koppers, A. A.; Staudigel, D.; Staudigel, H.

2008-12-01

EarthRef.org is comprehensive and convenient resource for Earth Science reference data and models. It encompasses four main portals: the Geochemical Earth Reference Model (GERM), the Magnetics Information Consortium (MagIC), the Seamount Biogeosciences Network (SBN), and the Enduring Resources for Earth Science Education (ERESE). Their underlying databases are publically available and the scientific community has contributed widely and is urged to continue to do so. However, the net result is a vast and largely heterogeneous warehouse of geospatial data ranging from carefully prepared maps of seamounts to geochemical data/metadata, daily reports from seagoing expeditions, large volumes of raw and processed multibeam data, images of paleomagnetic sampling sites, etc. This presents a considerable obstacle for integrating other rich media content, such as videos, images, data files, cruise tracks, and interoperable database results, without overwhelming the web user. The four EarthRef.org portals clearly lend themselves to a more intuitive user interface and has, therefore, been an invaluable test bed for the design and implementation of FlashMap, a versatile KML-driven geospatial browser written for reliability and speed in Adobe Flash. FlashMap allows layers of content to be loaded and displayed over a streaming high-resolution map which can be zoomed and panned similarly to Google Maps and Google Earth. Many organizations, from National Geographic to the USGS, have begun using Google Earth software to display geospatial content. However, Google Earth, as a desktop application, does not integrate cleanly with existing websites requiring the user to navigate away from the browser and focus on a separate application and Google Maps, written in Java Script, does not scale up reliably to large datasets. FlashMap remedies these problems as a web-based application that allows for seamless integration of the real-time display power of Google Earth and the flexibility of the web without losing scalability and control of the base maps. Our Flash-based application is fully compatible with KML (Keyhole Markup Language) 2.2, the most recent iteration of KML, allowing users with existing Google Earth KML files to effortlessly display their geospatial content embedded in a web page. As a test case for FlashMap, the annual Iron-Oxidizing Microbial Observatory (FeMO) dive cruise to the Loihi Seamount, in conjunction with data available from ongoing and published FeMO laboratory studies, showcases the flexibility of this single web-based application. With a KML 2.2 compatible web-service providing the content, any database can display results in FlashMap. The user can then hide and show multiple layers of content, potentially from several data sources, and rapidly digest a vast quantity of information to narrow the search results. This flexibility gives experienced users the ability to drill down to exactly the record they are looking for (SERC at Carleton College's educational application of FlashMap at http://serc.carleton.edu/sp/erese/activities/22223.html) and allows users familiar with Google Earth the ability to load and view geospatial data content within a browser from any computer with an internet connection.

Daily Physical Activity and Hot Flashes in the Study of Women's Health Across the Nation FLASHES Study

PubMed Central

Gibson, Carolyn; Matthews, Karen; Thurston, Rebecca

2014-01-01

Objective To examine the role of physical activity in menopausal hot flashes. Competing models conceptualize physical activity as a risk or protective factor for hot flashes. Few studies have examined this relationship prospectively using physiologic measures of hot flashes and physical activity. Design Over two 48 hour-periods, 51 participants wore a physiologic hot flash monitor and activity monitor, and reported their hot flashes in an electronic diary. Physiologic hot flashes, reported hot flashes and reported hot flashes without physiological corroboration were related to activity changes using hierarchical generalized linear modeling, adjusting for potential confounders. Setting Community. Patients Midlife women. Interventions None. Main Outcome Measures Physiologically-detected hot flashes and reported hot flashes with and without physiologic corroboration. Results Hot flash reports without physiologic corroboration were more likely after activity increases (OR 1.04, 95% CI: 1.00-1.10, p=.01), particularly among women with higher levels of depressive symptoms (interaction p=.02). No other types of hot flashes were related to physical activity. Conclusion Acute increases in physical activity were associated with increased reporting of hot flashes lacking physiologic corroboration, particularly among women with depressive symptoms. Clinicians should consider the role of symptom perception and reporting in relations between physical activity and hot flashes. PMID:24491454

A Computer Program for Flow-Log Analysis of Single Holes (FLASH)

USGS Publications Warehouse

Day-Lewis, F. D.; Johnson, C.D.; Paillet, Frederick L.; Halford, K.J.

2011-01-01

A new computer program, FLASH (Flow-Log Analysis of Single Holes), is presented for the analysis of borehole vertical flow logs. The code is based on an analytical solution for steady-state multilayer radial flow to a borehole. The code includes options for (1) discrete fractures and (2) multilayer aquifers. Given vertical flow profiles collected under both ambient and stressed (pumping or injection) conditions, the user can estimate fracture (or layer) transmissivities and far-field hydraulic heads. FLASH is coded in Microsoft Excel with Visual Basic for Applications routines. The code supports manual and automated model calibration. ?? 2011, The Author(s). Ground Water ?? 2011, National Ground Water Association.

An automated Y-maze based on a reduced instruction set computer (RISC) microcontroller for the assessment of continuous spontaneous alternation in rats.

PubMed

Heredia-López, Francisco J; Álvarez-Cervera, Fernando J; Collí-Alfaro, José G; Bata-García, José L; Arankowsky-Sandoval, Gloria; Góngora-Alfaro, José L

2016-12-01

Continuous spontaneous alternation behavior (SAB) in a Y-maze is used for evaluating working memory in rodents. Here, the design of an automated Y-maze equipped with three infrared optocouplers per arm, and commanded by a reduced instruction set computer (RISC) microcontroller is described. The software was devised for recording only true entries and exits to the arms. Experimental settings are programmed via a keyboard with three buttons and a display. The sequence of arm entries and the time spent in each arm and the neutral zone (NZ) are saved as a text file in a non-volatile memory for later transfer to a USB flash memory. Data files are analyzed with a program developed under LabVIEW® environment, and the results are exported to an Excel® spreadsheet file. Variables measured are: latency to exit the starting arm, sequence and number of arm entries, number of alternations, alternation percentage, and cumulative times spent in each arm and NZ. The automated Y-maze accurately detected the SAB decrease produced in rats by the muscarinic antagonist trihexyphenidyl, and its reversal by caffeine, having 100 % concordance with the alternation percentages calculated by two trained observers who independently watched videos of the same experiments. Although the values of time spent in the arms and NZ measured by the automated system had small discrepancies with those calculated by the observers, Bland-Altman analysis showed 95 % concordance in three pairs of comparisons, while in one it was 90 %, indicating that this system is a reliable and inexpensive alternative for the study of continuous SAB in rodents.

Evaluation of Cholinergic Deficiency in Preclinical Alzheimer's Disease Using Pupillometry

PubMed Central

Robinson, Liam; Rowe, Christopher C.; Ames, David; Masters, Colin L.; Taddei, Kevin; Rainey-Smith, Stephanie R.; Martins, Ralph N.; Kanagasingam, Yogesan

2017-01-01

Cortical cholinergic deficiency is prominent in Alzheimer's disease (AD), and published findings of diminished pupil flash response in AD suggest that this deficiency may extend to the visual cortical areas and anterior eye. Pupillometry is a low-cost, noninvasive technique that may be useful for monitoring cholinergic deficits which generally lead to memory and cognitive disorders. The aim of the study was to evaluate pupillometry for early detection of AD by comparing the pupil flash response (PFR) in AD (N = 14) and cognitively normal healthy control (HC, N = 115) participants, with the HC group stratified according to high (N = 38) and low (N = 77) neocortical amyloid burden (NAB). Constriction phase PFR parameters were significantly reduced in AD compared to HC (maximum acceleration p < 0.05, maximum velocity p < 0.0005, average velocity p < 0.005, and constriction amplitude p < 0.00005). The high-NAB HC subgroup had reduced PFR response cross-sectionally, and also a greater decline longitudinally, compared to the low-NAB subgroup, suggesting changes to pupil response in preclinical AD. The results suggest that PFR changes may occur in the preclinical phase of AD. Hence, pupillometry has a potential as an adjunct for noninvasive, cost-effective screening for preclinical AD. PMID:28894607

Adverse Effects of Induced Hot Flashes on Objectively Recorded and Subjectively Reported Sleep: Results of a Gonadotropin-Releasing Hormone Agonist Experimental Protocol

PubMed Central

Joffe, Hadine; White, David P.; Crawford, Sybil L.; McCurnin, Kristin E.; Economou, Nicole; Connors, Stephanie; Hall, Janet E.

2013-01-01

Objectives The impact of hot flashes on sleep is of great clinical interest, but results are inconsistent, especially when both hot flashes and sleep are measured objectively. Using objective and subjective measurements, we examined the impact of hot flashes on sleep by inducing hot flashes with a gonadotropin-releasing hormone agonist (GnRHa). Methods The GnRHa leuprolide was administered to 20 healthy premenopausal volunteers without hot flashes or sleep disturbances. Induced hot flashes were assessed objectively (skin-conductance monitor) and subjectively (daily diary) during one-month follow-up. Changes from baseline in objective (actigraphy) and subjective sleep quality (Pittsburgh Sleep Quality Index [PSQI]) were compared between women who did and did not develop objective hot flashes, and, in parallel analyses, subjective hot flashes. Results New-onset hot flashes were recorded in 14 (70%) and reported by 14 (70%) women (80% concordance). Estradiol was universally suppressed. Objective sleep efficiency worsened in women with objective hot flashes and improved in women without objective hot flashes (median decrease 2.6%, increase 4.2%, p=0.005). Subjective sleep quality worsened more in those with than without subjective hot flashes (median increase PSQI 2.5 vs. 1.0, p=0.03). Objective hot flashes were not associated with subjective sleep quality, nor were subjective symptoms linked to objective sleep measures. Conclusions This experimental model of induced hot flashes demonstrates a causal relationship between hot flashes and poor sleep quality. Objective hot flashes result in worse objective sleep efficiency, while subjective hot flashes worsen perceived sleep quality. PMID:23481119

Implementation of a Landscape Lighting System to Display Images

NASA Astrophysics Data System (ADS)

Sun, Gi-Ju; Cho, Sung-Jae; Kim, Chang-Beom; Moon, Cheol-Hong

The system implemented in this study consists of a PC, MASTER, SLAVEs and MODULEs. The PC sets the various landscape lighting displays, and the image files can be sent to the MASTER through a virtual serial port connected to the USB (Universal Serial Bus). The MASTER sends a sync signal to the SLAVE. The SLAVE uses the signal received from the MASTER and the landscape lighting display pattern. The video file is saved in the NAND Flash memory and the R, G, B signals are separated using the self-made display signal and sent to the MODULE so that it can display the image.

Coupled prediction of flash flood response and debris flow occurrence: Application on an alpine extreme flood event

NASA Astrophysics Data System (ADS)

Destro, Elisa; Amponsah, William; Nikolopoulos, Efthymios I.; Marchi, Lorenzo; Marra, Francesco; Zoccatelli, Davide; Borga, Marco

2018-03-01

The concurrence of flash floods and debris flows is of particular concern, because it may amplify the hazard corresponding to the individual generative processes. This paper presents a coupled modelling framework for the predictions of flash flood response and of the occurrence of debris flows initiated by channel bed mobilization. The framework combines a spatially distributed flash flood response model and a debris flow initiation model to define a threshold value for the peak flow which permits identification of channelized debris flow initiation. The threshold is defined over the channel network as a function of the upslope area and of the local channel bed slope, and it is based on assumptions concerning the properties of the channel bed material and of the morphology of the channel network. The model is validated using data from an extreme rainstorm that impacted the 140 km2 Vizze basin in the Eastern Italian Alps on August 4-5, 2012. The results show that the proposed methodology has improved skill in identifying the catchments where debris-flows are triggered, compared to the use of simpler thresholds based on rainfall properties.

A WRF-Chem Analysis of Flash Rates, Lightning-NOx Production and Subsequent Trace Gas Chemistry of the 29-30 May 2012 Convective Event in Oklahoma During DC3

NASA Technical Reports Server (NTRS)

Cummings, Kristin A.; Pickering, Kenneth; Barth, Mary; Weinheimer, A.; Bela, M.; Li, Y; Allen, D.; Bruning, E.; MacGorman, D.; Rutledge, S.;

Engineering customized TALE nucleases (TALENs) and TALE transcription factors by fast ligation-based automatable solid-phase high-throughput (FLASH) assembly.

PubMed

Reyon, Deepak; Maeder, Morgan L; Khayter, Cyd; Tsai, Shengdar Q; Foley, Jonathan E; Sander, Jeffry D; Joung, J Keith

2013-07-01

Customized DNA-binding domains made using transcription activator-like effector (TALE) repeats are rapidly growing in importance as widely applicable research tools. TALE nucleases (TALENs), composed of an engineered array of TALE repeats fused to the FokI nuclease domain, have been used successfully for directed genome editing in various organisms and cell types. TALE transcription factors (TALE-TFs), consisting of engineered TALE repeat arrays linked to a transcriptional regulatory domain, have been used to up- or downregulate expression of endogenous genes in human cells and plants. This unit describes a detailed protocol for the recently described fast ligation-based automatable solid-phase high-throughput (FLASH) assembly method. FLASH enables automated high-throughput construction of engineered TALE repeats using an automated liquid handling robot or manually using a multichannel pipet. Using the automated approach, a single researcher can construct up to 96 DNA fragments encoding TALE repeat arrays of various lengths in a single day, and then clone these to construct sequence-verified TALEN or TALE-TF expression plasmids in a week or less. Plasmids required for FLASH are available by request from the Joung lab (http://eGenome.org). This unit also describes improvements to the Zinc Finger and TALE Targeter (ZiFiT Targeter) web server (http://ZiFiT.partners.org) that facilitate the design and construction of FLASH TALE repeat arrays in high throughput. © 2013 by John Wiley & Sons, Inc.

Studying the hydro-meteorological extremes. The benefits from the European Flash Flood research oriented HYDRATE project.

NASA Astrophysics Data System (ADS)

Tsanis, Ioannis K.; Koutroulis, Aristeidis G.; Daliakopoulos, Ioannis N.; Grillakis, Emmanouil G.

2010-05-01

The present paper summarizes the advances of flash flood research for the Greek case study, within the frame of HYDRATE EC funded project. As a first step, a collation of homogenous primary data on flash floods occurred in Greece based on various data sources resulted in 21 documented events, enriching the HYDRATE database. Specific major events were selected for further detailed data collation and analysis. A common intensive post event field survey was conducted by various researchers with different skills and experience, in order to document the 18th of September 2007, Western Slovenia flash flood event. The observation strategy and the lessons learned during this campaign were applied successfully for surveying an event in Crete. Two flash flood events occurred in Crete were selected for detailed analysis, the 13th of January 1994 event occurred in Giofiros basin and the 17th of October 2006 event occurred in Almirida basin. Several techniques, like distributed rainfall-runoff modelling, hydraulic modelling, indirect and empirical peak discharge estimation, were applied for the understanding of the dominant flash flood processes and the effect of initial conditions on peak discharge. In a more general framework, the seasonality of the hydrometeorologic characteristics of floods that occurred in Crete during the period 1990-2007 and the atmospheric circulation conditions during the flood events were examined. During the three and a half years research period, many lessons have learnt from a fruitful collaboration among the project partners. HYDRATE project improved the scientific basis of flash flood research and provided research knowledge on flood risk management.

Association between polycystic ovary syndrome and hot flash presentation during the midlife period.

PubMed

Yin, Ophelia; Zacur, Howard A; Flaws, Jodi A; Christianson, Mindy S

2018-06-01

Polycystic ovary syndrome (PCOS) is the most common endocrinopathy in reproductive-aged women; however, the impact of PCOS on menopausal symptoms remains poorly understood. This study aims to determine the influence of PCOS on hot flash presentation in midlife women. Participants were recruited from the Midlife Women's Health Study involving 780 women aged 45 to 54 years. All women completed detailed questionnaires on hot flash symptoms. Between June 2014 and March 2015, participants were screened for history of PCOS based on the Rotterdam criteria. Fisher's exact tests and Wilcoxon rank-sum tests were used for analysis. Multivariate logistic regression was performed to identify factors associated with hot flashes at midlife. In all, 453 women (69%) consented to the telephone interview and 9.3% (n = 42) met diagnostic criteria for PCOS; 411 were included as controls. Mean age was 48.0 and body mass index was 27.3 for women with PCOS. The majority of participants were white (72%). There was no difference between PCOS and control women for levels of follicle-stimulating hormone, testosterone, progesterone, or estradiol. Multivariate logistic regression demonstrated that PCOS was not associated with increased odds of hot flash incidence. Smoking was the only variable associated with experiencing hot flashes (odds ratio 2.0, 95% confidence interval 1.05-3.98). A history of PCOS was not associated with increased hot flash symptoms during the midlife period. Additional research should continue to investigate the health and quality of life associated with a history of PCOS in the aging population.

High Resolution Flash Flood Forecasting Using a Wireless Sensor Network in the Dallas-Fort Worth Metroplex

NASA Astrophysics Data System (ADS)

Bartos, M. D.; Kerkez, B.; Noh, S.; Seo, D. J.

2017-12-01

In this study, we develop and evaluate a high resolution urban flash flood monitoring system using a wireless sensor network (WSN), a real-time rainfall-runoff model, and spatially-explicit radar rainfall predictions. Flooding is the leading cause of natural disaster fatalities in the US, with flash flooding in particular responsible for a majority of flooding deaths. While many riverine flood models have been operationalized into early warning systems, there is currently no model that is capable of reliably predicting flash floods in urban areas. Urban flash floods are particularly difficult to model due to a lack of rainfall and runoff data at appropriate scales. To address this problem, we develop a wide-area flood-monitoring wireless sensor network for the Dallas-Fort Worth metroplex, and use this network to characterize rainfall-runoff response over multiple heterogeneous catchments. First, we deploy a network of 22 wireless sensor nodes to collect real-time stream stage measurements over catchments ranging from 2-80 km2 in size. Next, we characterize the rainfall-runoff response of each catchment by combining stream stage data with gage and radar-based precipitation measurements. Finally, we demonstrate the potential for real-time flash flood prediction by joining the derived rainfall-runoff models with real-time radar rainfall predictions. We find that runoff response is highly heterogeneous among catchments, with large variabilities in runoff response detected even among nearby gages. However, when spatially-explicit rainfall fields are included, spatial variability in runoff response is largely captured. This result highlights the importance of increased spatial coverage for flash flood prediction.

Real cell overlay measurement through design based metrology

NASA Astrophysics Data System (ADS)

Yoo, Gyun; Kim, Jungchan; Park, Chanha; Lee, Taehyeong; Ji, Sunkeun; Jo, Gyoyeon; Yang, Hyunjo; Yim, Donggyu; Yamamoto, Masahiro; Maruyama, Kotaro; Park, Byungjun

2014-04-01

Until recent device nodes, lithography has been struggling to improve its resolution limit. Even though next generation lithography technology is now facing various difficulties, several innovative resolution enhancement technologies, based on 193nm wavelength, were introduced and implemented to keep the trend of device scaling. Scanner makers keep developing state-of-the-art exposure system which guarantees higher productivity and meets a more aggressive overlay specification. "The scaling reduction of the overlay error has been a simple matter of the capability of exposure tools. However, it is clear that the scanner contributions may no longer be the majority component in total overlay performance. The ability to control correctable overlay components is paramount to achieve the desired performance.(2)" In a manufacturing fab, the overlay error, determined by a conventional overlay measurement: by using an overlay mark based on IBO and DBO, often does not represent the physical placement error in the cell area of a memory device. The mismatch may arise from the size or pitch difference between the overlay mark and the cell pattern. Pattern distortion, caused by etching or CMP, also can be a source of the mismatch. Therefore, the requirement of a direct overlay measurement in the cell pattern gradually increases in the manufacturing field, and also in the development level. In order to overcome the mismatch between conventional overlay measurement and the real placement error of layer to layer in the cell area of a memory device, we suggest an alternative overlay measurement method utilizing by design, based metrology tool. A basic concept of this method is shown in figure1. A CD-SEM measurement of the overlay error between layer 1 and 2 could be the ideal method but it takes too long time to extract a lot of data from wafer level. An E-beam based DBM tool provides high speed to cover the whole wafer with high repeatability. It is enabled by using the design as a reference for overlay measurement and a high speed scan system. In this paper, we have demonstrated that direct overlay measurement in the cell area can distinguish the mismatch exactly, instead of using overlay mark. This experiment was carried out for several critical layer in DRAM and Flash memory, using DBM(Design Based Metrology) tool, NGR2170™.

Transition from Target to Gaze Coding in Primate Frontal Eye Field during Memory Delay and Memory–Motor Transformation123

PubMed Central

Sajad, Amirsaman; Sadeh, Morteza; Yan, Xiaogang; Wang, Hongying

2016-01-01

Abstract The frontal eye fields (FEFs) participate in both working memory and sensorimotor transformations for saccades, but their role in integrating these functions through time remains unclear. Here, we tracked FEF spatial codes through time using a novel analytic method applied to the classic memory-delay saccade task. Three-dimensional recordings of head-unrestrained gaze shifts were made in two monkeys trained to make gaze shifts toward briefly flashed targets after a variable delay (450-1500 ms). A preliminary analysis of visual and motor response fields in 74 FEF neurons eliminated most potential models for spatial coding at the neuron population level, as in our previous study (Sajad et al., 2015). We then focused on the spatiotemporal transition from an eye-centered target code (T; preferred in the visual response) to an eye-centered intended gaze position code (G; preferred in the movement response) during the memory delay interval. We treated neural population codes as a continuous spatiotemporal variable by dividing the space spanning T and G into intermediate T–G models and dividing the task into discrete steps through time. We found that FEF delay activity, especially in visuomovement cells, progressively transitions from T through intermediate T–G codes that approach, but do not reach, G. This was followed by a final discrete transition from these intermediate T–G delay codes to a “pure” G code in movement cells without delay activity. These results demonstrate that FEF activity undergoes a series of sensory–memory–motor transformations, including a dynamically evolving spatial memory signal and an imperfect memory-to-motor transformation. PMID:27092335

Menopausal hot flashes: Randomness or rhythmicity

NASA Astrophysics Data System (ADS)

Kronenberg, Fredi

1991-10-01

Menopausal hot flashes are episodes of flushing, increased heart rate, skin blood flow and skin temperature, and a sensation of heat. The thermoregulatory and cardiovascular concomitants of hot flashes are associated with peaks in the levels of various hormones and neurotransmitters in the peripheral circulation. Although hot flashes affect about 75% of women, and are the primary reason that women at menopause seek medical attention, the mechanism of hot flashes is still not understood. Hot flashes vary in frequency and intensity both within and between individuals, and have been thought of as occurring randomly. Yet, some women report that their hot flashes are worse at a particular time of day or year. Initial examination of subjects' recordings of their hot flashes showed diurnal patterns of hot flash occurrence. There also seems to be a diurnal rhythm of hot flash intensity. Continuous physiological monitoring of hot flashes is facilitating the analysis of these patterns, which is revealing circadian and ultradian periodicities. The occurrence of hot flashes can be modulated by external and internal factors, including ambient temperature and fever. Rhythms of thermoregulatory and endocrine functions also may influence hot flash patterns. Examination of the interrelationships between the various systems of the body involved in hot flashes, and a multidisciplinary approach to the analysis of hot flash patterns, will aid our understanding of this complex phenomenon.

I-process Nucleosynthesis and Mass Retention Efficiency in He-shell Flash Evolution of Rapidly Accreting White Dwarfs

NASA Astrophysics Data System (ADS)

Denissenkov, Pavel A.; Herwig, Falk; Battino, Umberto; Ritter, Christian; Pignatari, Marco; Jones, Samuel; Paxton, Bill

2017-01-01

Based on stellar evolution simulations, we demonstrate that rapidly accreting white dwarfs (WDs) in close binary systems are an astrophysical site for the intermediate neutron-capture process. During recurrent and very strong He-shell flashes in the stable H-burning accretion regime H-rich material enters the He-shell flash convection zone. {}12{{C}}(p,γ ){}13{{N}} reactions release enough energy to potentially impact convection, and I process is activated through the {}13{{C}}{(α ,{{n}})}16{{O}} reaction. The H-ingestion flash may not cause a split of the convection zone as it was seen in simulations of He-shell flashes in post-AGB and low-Z asymptotic giant branch (AGB) stars. We estimate that for the production of first-peak heavy elements this site can be of similar importance for galactic chemical evolution as the s-process production by low-mass AGB stars. The He-shell flashes result in the expansion and, ultimately, ejection of the accreted and then I-process enriched material, via super-Eddington-luminosity winds or Roche-lobe overflow. The WD models do not retain any significant amount of the accreted mass, with a He retention efficiency of ≲ 10 % depending on mass and convective boundary mixing assumptions. This makes the evolutionary path of such systems to supernova Ia explosion highly unlikely.

Theoretical and experimental study of the formation conditions of stepped leaders in negative flashes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Shijun, E-mail: sj-xie@163.com; State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084; Zeng, Rong

2015-08-15

Natural lightning flashes are stochastic and uncontrollable, and thus, it is difficult to observe the formation process of a downward negative stepped leader (NSL) directly and in detail. This situation has led to some dispute over the actual NSL formation mechanism, and thus has hindered improvements in the lightning shielding analysis model. In this paper, on the basis of controllable long air gap discharge experiments, the formation conditions required for NSLs in negative flashes have been studied. First, a series of simulation experiments on varying scales were designed and carried out. The NSL formation processes were observed, and several ofmore » the characteristic process parameters, including the scale, the propagation velocity, and the dark period, were obtained. By comparing the acquired formation processes and the characteristic parameters with those in natural lightning flashes, the similarity between the NSLs in the simulation experiments and those in natural flashes was proved. Then, based on the local thermodynamic equation and the space charge estimation method, the required NSL formation conditions were deduced, and the space background electric field (E{sub b}) was proposed as the primary parameter for NSL formation. Finally, the critical value of E{sub b} required for the formation of NSLs in natural flashes was determined to be approximately 75 kV/m by extrapolation of the results of the simulation experiments.« less

An EOG-Based Human-Machine Interface for Wheelchair Control.

PubMed

Huang, Qiyun; He, Shenghong; Wang, Qihong; Gu, Zhenghui; Peng, Nengneng; Li, Kai; Zhang, Yuandong; Shao, Ming; Li, Yuanqing

2017-07-27

Non-manual human-machine interfaces (HMIs) have been studied for wheelchair control with the aim of helping severely paralyzed individuals regain some mobility. The challenge is to rapidly, accurately and sufficiently produce control commands, such as left and right turns, forward and backward motions, acceleration, deceleration, and stopping. In this paper, a novel electrooculogram (EOG)-based HMI is proposed for wheelchair control. Thirteen flashing buttons are presented in the graphical user interface (GUI), and each of the buttons corresponds to a command. These buttons flash on a one-by-one manner in a pre-defined sequence. The user can select a button by blinking in sync with its flashes. The algorithm detects the eye blinks from a channel of vertical EOG data and determines the user's target button based on the synchronization between the detected blinks and the button's flashes. For healthy subjects/patients with spinal cord injuries (SCIs), the proposed HMI achieved an average accuracy of 96.7%/91.7% and a response time of 3.53 s/3.67 s with 0 false positive rates (FPRs). Using only one channel of vertical EOG signals associated with eye blinks, the proposed HMI can accurately provide sufficient commands with a satisfactory response time. The proposed HMI provides a novel non-manual approach for severely paralyzed individuals to control a wheelchair. Compared with a newly established EOG-based HMI, the proposed HMI can generate more commands with higher accuracy, lower FPR and fewer electrodes.

Flashing characters with famous faces improves ERP-based brain-computer interface performance

NASA Astrophysics Data System (ADS)

Kaufmann, T.; Schulz, S. M.; Grünzinger, C.; Kübler, A.

2011-10-01

Currently, the event-related potential (ERP)-based spelling device, often referred to as P300-Speller, is the most commonly used brain-computer interface (BCI) for enhancing communication of patients with impaired speech or motor function. Among numerous improvements, a most central feature has received little attention, namely optimizing the stimulus used for eliciting ERPs. Therefore we compared P300-Speller performance with the standard stimulus (flashing characters) against performance with stimuli known for eliciting particularly strong ERPs due to their psychological salience, i.e. flashing familiar faces transparently superimposed on characters. Our results not only indicate remarkably increased ERPs in response to familiar faces but also improved P300-Speller performance due to a significant reduction of stimulus sequences needed for correct character classification. These findings demonstrate a promising new approach for improving the speed and thus fluency of BCI-enhanced communication with the widely used P300-Speller.

Forecasting Lightning Threat using Cloud-resolving Model Simulations

NASA Technical Reports Server (NTRS)

McCaul, E. W., Jr.; Goodman, S. J.; LaCasse, K. M.; Cecil, D. J.

2009-01-01

As numerical forecasts capable of resolving individual convective clouds become more common, it is of interest to see if quantitative forecasts of lightning flash rate density are possible, based on fields computed by the numerical model. Previous observational research has shown robust relationships between observed lightning flash rates and inferred updraft and large precipitation ice fields in the mixed phase regions of storms, and that these relationships might allow simulated fields to serve as proxies for lightning flash rate density. It is shown in this paper that two simple proxy fields do indeed provide reasonable and cost-effective bases for creating time-evolving maps of predicted lightning flash rate density, judging from a series of diverse simulation case study events in North Alabama for which Lightning Mapping Array data provide ground truth. One method is based on the product of upward velocity and the mixing ratio of precipitating ice hydrometeors, modeled as graupel only, in the mixed phase region of storms at the -15\\dgc\\ level, while the second method is based on the vertically integrated amounts of ice hydrometeors in each model grid column. Each method can be calibrated by comparing domainwide statistics of the peak values of simulated flash rate proxy fields against domainwide peak total lightning flash rate density data from observations. Tests show that the first method is able to capture much of the temporal variability of the lightning threat, while the second method does a better job of depicting the areal coverage of the threat. A blended solution is designed to retain most of the temporal sensitivity of the first method, while adding the improved spatial coverage of the second. Weather Research and Forecast Model simulations of selected North Alabama cases show that this model can distinguish the general character and intensity of most convective events, and that the proposed methods show promise as a means of generating quantitatively realistic fields of lightning threat. However, because models tend to have more difficulty in correctly predicting the instantaneous placement of storms, forecasts of the detailed location of the lightning threat based on single simulations can be in error. Although these model shortcomings presently limit the precision of lightning threat forecasts from individual runs of current generation models, the techniques proposed herein should continue to be applicable as newer and more accurate physically-based model versions, physical parameterizations, initialization techniques and ensembles of cloud-allowing forecasts become available.

Analysis of flash flood parameters and human impacts in the US from 2006 to 2012

NASA Astrophysics Data System (ADS)

Špitalar, Maruša; Gourley, Jonathan J.; Lutoff, Celine; Kirstetter, Pierre-Emmanuel; Brilly, Mitja; Carr, Nicholas

2014-11-01

Several different factors external to the natural hazard of flash flooding can contribute to the type and magnitude of their resulting damages. Human exposure, vulnerability, fatality and injury rates can be minimized by identifying and then mitigating the causative factors for human impacts. A database of flash flooding was used for statistical analysis of human impacts across the U.S. 21,549 flash flood events were analyzed during a 6-year period from October 2006 to 2012. Based on the information available in the database, physical parameters were introduced and then correlated to the reported human impacts. Probability density functions of the frequency of flash flood events and the PDF of occurrences weighted by the number of injuries and fatalities were used to describe the influence of each parameter. The factors that emerged as the most influential on human impacts are short flood durations, small catchment sizes in rural areas, vehicles, and nocturnal events with low visibility. Analyzing and correlating a diverse range of parameters to human impacts give us important insights into what contributes to fatalities and injuries and further raises questions on how to manage them.

An Analysis of Total Lightning Flash Rates Over Florida

NASA Astrophysics Data System (ADS)

Mazzetti, Thomas O.; Fuelberg, Henry E.

2017-12-01

Although Florida is known as the "Sunshine State", it also contains the greatest lightning flash densities in the United States. Flash density has received considerable attention in the literature, but lightning flash rate has received much less attention. We use data from the Earth Networks Total Lightning Network (ENTLN) to produce a 5 year (2010-2014) set of statistics regarding total flash rates over Florida and adjacent regions. Instead of tracking individual storms, we superimpose a 0.2° × 0.2° grid over the study region and count both cloud-to-ground (CG) and in-cloud (IC) flashes over 5 min intervals. Results show that the distribution of total flash rates is highly skewed toward small values, whereas the greatest rate is 185 flashes min-1. Greatest average annual flash rates ( 3 flashes min-1) are located near Orlando. The southernmost peninsula, North Florida, and the Florida Panhandle exhibit smaller average annual flash rates ( 1.5 flashes min-1). Large flash rates > 100 flashes min-1 can occur during any season, at any time during the 24 h period, and at any location within the domain. However, they are most likely during the afternoon and early evening in East Central Florida during the spring and summer months.

Fractal-Based Lightning Channel Length Estimation from Convex-Hull Flash Areas for DC3 Lightning Mapping Array Data

NASA Technical Reports Server (NTRS)

Bruning, Eric C.; Thomas, Ronald J.; Krehbiel, Paul R.; Rison, William; Carey, Larry D.; Koshak, William; Peterson, Harold; MacGorman, Donald R.

2013-01-01

We will use VHF Lightning Mapping Array data to estimate NOx per flash and per unit channel length, including the vertical distribution of channel length. What s the best way to find channel length from VHF sources? This paper presents the rationale for the fractal method, which is closely related to the box-covering method.

Behavioral weight loss for the management of menopausal hot flashes: a pilot study.

PubMed

Thurston, Rebecca C; Ewing, Linda J; Low, Carissa A; Christie, Aimee J; Levine, Michele D

2015-01-01

Although adiposity has been considered to be protective against hot flashes, newer data suggest positive relationships between hot flashes and adiposity. No studies have been specifically designed to test whether weight loss reduces hot flashes. This pilot study aimed to evaluate the feasibility, acceptability, and initial efficacy of behavioral weight loss in reducing hot flashes. Forty overweight or obese women with hot flashes (≥ 4 hot flashes/d) were randomized to either behavioral weight loss intervention or wait-list control. Hot flashes were assessed before and after intervention via physiologic monitoring, diary, and questionnaire. Comparisons of changes in hot flashes and anthropometrics between conditions were performed via Wilcoxon tests. Study retention (83%) and intervention satisfaction (93.8%) were high. Most women (74.1%) reported that hot flash reduction was a major motivator for losing weight. Women randomized to the weight loss intervention lost more weight (-8.86 kg) than did women randomized to control (+0.23 kg; P < 0.0001). Women randomized to weight loss also showed greater reductions in questionnaire-reported hot flashes (2-wk hot flashes, -63.0) than did women in the control group (-28.0; P = 0.03)-a difference not demonstrated in other hot flash measures. Reductions in weight and hot flashes were significantly correlated (eg, r = 0.47, P = 0.006). This pilot study shows a behavioral weight loss program that is feasible, acceptable, and effective in producing weight loss among overweight or obese women with hot flashes. Findings indicate the importance of a larger study designed to test behavioral weight loss for hot flash reduction. Hot flash management could motivate women to engage in this health-promoting behavior.

Lithography alternatives meet design style reality: How do they "line" up?

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to set the channel length of select and memory transistors.

Targeting an efficient target-to-target interval for P300 speller brain–computer interfaces

PubMed Central

Sellers, Eric W.; Wang, Xingyu

2013-01-01

Longer target-to-target intervals (TTI) produce greater P300 event-related potential amplitude, which can increase brain–computer interface (BCI) classification accuracy and decrease the number of flashes needed for accurate character classification. However, longer TTIs requires more time for each trial, which will decrease the information transfer rate of BCI. In this paper, a P300 BCI using a 7 × 12 matrix explored new flash patterns (16-, 18- and 21-flash pattern) with different TTIs to assess the effects of TTI on P300 BCI performance. The new flash patterns were designed to minimize TTI, decrease repetition blindness, and examine the temporal relationship between each flash of a given stimulus by placing a minimum of one (16-flash pattern), two (18-flash pattern), or three (21-flash pattern) non-target flashes between each target flashes. Online results showed that the 16-flash pattern yielded the lowest classification accuracy among the three patterns. The results also showed that the 18-flash pattern provides a significantly higher information transfer rate (ITR) than the 21-flash pattern; both patterns provide high ITR and high accuracy for all subjects. PMID:22350331

Spatial-temporal characteristics of lightning flash size in a supercell storm

NASA Astrophysics Data System (ADS)

Zhang, Zhixiao; Zheng, Dong; Zhang, Yijun; Lu, Gaopeng

2017-11-01

The flash sizes of a supercell storm, in New Mexico on October 5, 2004, are studied using the observations from the New Mexico Lightning Mapping Array and the Albuquerque, New Mexico, Doppler radar (KABX). First, during the temporal evolution of the supercell, the mean flash size is anti-correlated with the flash rate, following a unary power function, with a correlation coefficient of - 0.87. In addition, the mean flash size is linearly correlated with the area of reflectivity > 30 dBZ at 5 km normalized by the flash rate, with a correlation coefficient of 0.88. Second, in the horizontal, flash size increases along the direction from the region near the convection zone to the adjacent forward anvil. The region of minimum flash size usually corresponds to the region of maximum flash initiation and extent density. The horizontal correspondence between the mean flash size and the flash extent density can also be fitted by a unary power function, and the correlation coefficient is > 0.5 in 50% of the radar volume scans. Furthermore, the quality of fit is positively correlated to the convective intensity. Third, in the vertical direction, the height of the maximum flash initiation density is close to the height of maximum flash extent density, but corresponds to the height where the mean flash size is relatively small. In the discussion, the distribution of the small and dense charge regions when and where convection is vigorous in the storm, is deduced to be responsible for the relationship that flash size is temporally and spatially anti-correlated with flash rate and density, and the convective intensity.

Systems-wide RNAi analysis of CASP8AP2/FLASH shows transcriptional deregulation of the replication-dependent histone genes and extensive effects on the transcriptome of colorectal cancer cells

PubMed Central

2012-01-01

Background Colorectal carcinomas (CRC) carry massive genetic and transcriptional alterations that influence multiple cellular pathways. The study of proteins whose loss-of-function (LOF) alters the growth of CRC cells can be used to further understand the cellular processes cancer cells depend upon for survival. Results A small-scale RNAi screen of ~400 genes conducted in SW480 CRC cells identified several candidate genes as required for the viability of CRC cells, most prominently CASP8AP2/FLASH. To understand the function of this gene in maintaining the viability of CRC cells in an unbiased manner, we generated gene specific expression profiles following RNAi. Silencing of CASP8AP2/FLASH resulted in altered expression of over 2500 genes enriched for genes associated with cellular growth and proliferation. Loss of CASP8AP2/FLASH function was significantly associated with altered transcription of the genes encoding the replication-dependent histone proteins as a result of the expression of the non-canonical polyA variants of these transcripts. Silencing of CASP8AP2/FLASH also mediated enrichment of changes in the expression of targets of the NFκB and MYC transcription factors. These findings were confirmed by whole transcriptome analysis of CASP8AP2/FLASH silenced cells at multiple time points. Finally, we identified and validated that CASP8AP2/FLASH LOF increases the expression of neurofilament heavy polypeptide (NEFH), a protein recently linked to regulation of the AKT1/ß-catenin pathway. Conclusions We have used unbiased RNAi based approaches to identify and characterize the function of CASP8AP2/FLASH, a protein not previously reported as required for cell survival. This study further defines the role CASP8AP2/FLASH plays in the regulating expression of the replication-dependent histones and shows that its LOF results in broad and reproducible effects on the transcriptome of colorectal cancer cells including the induction of expression of the recently described tumor suppressor gene NEFH. PMID:22216762

Systems-wide RNAi analysis of CASP8AP2/FLASH shows transcriptional deregulation of the replication-dependent histone genes and extensive effects on the transcriptome of colorectal cancer cells.

PubMed

Hummon, Amanda B; Pitt, Jason J; Camps, Jordi; Emons, Georg; Skube, Susan B; Huppi, Konrad; Jones, Tamara L; Beissbarth, Tim; Kramer, Frank; Grade, Marian; Difilippantonio, Michael J; Ried, Thomas; Caplen, Natasha J

2012-01-04

Colorectal carcinomas (CRC) carry massive genetic and transcriptional alterations that influence multiple cellular pathways. The study of proteins whose loss-of-function (LOF) alters the growth of CRC cells can be used to further understand the cellular processes cancer cells depend upon for survival. A small-scale RNAi screen of ~400 genes conducted in SW480 CRC cells identified several candidate genes as required for the viability of CRC cells, most prominently CASP8AP2/FLASH. To understand the function of this gene in maintaining the viability of CRC cells in an unbiased manner, we generated gene specific expression profiles following RNAi. Silencing of CASP8AP2/FLASH resulted in altered expression of over 2500 genes enriched for genes associated with cellular growth and proliferation. Loss of CASP8AP2/FLASH function was significantly associated with altered transcription of the genes encoding the replication-dependent histone proteins as a result of the expression of the non-canonical polyA variants of these transcripts. Silencing of CASP8AP2/FLASH also mediated enrichment of changes in the expression of targets of the NFκB and MYC transcription factors. These findings were confirmed by whole transcriptome analysis of CASP8AP2/FLASH silenced cells at multiple time points. Finally, we identified and validated that CASP8AP2/FLASH LOF increases the expression of neurofilament heavy polypeptide (NEFH), a protein recently linked to regulation of the AKT1/ß-catenin pathway. We have used unbiased RNAi based approaches to identify and characterize the function of CASP8AP2/FLASH, a protein not previously reported as required for cell survival. This study further defines the role CASP8AP2/FLASH plays in the regulating expression of the replication-dependent histones and shows that its LOF results in broad and reproducible effects on the transcriptome of colorectal cancer cells including the induction of expression of the recently described tumor suppressor gene NEFH.

Looking for the best flash floods indicators in Mediterranean Region

NASA Astrophysics Data System (ADS)

Llasat, Maria-Carmen; Llasat-Botija, Montserrat; Turco, Marco

2010-05-01

Flash floods are a recurrent hazard in Mediterranean Region. From a global point of view, a distinction between two kinds of floods can be made (Llasat, 2009): a) Short-lived and strongly convective events (<3 h) of very intense precipitation (peaks above 3 mm/min) and total rainfall <100 mm, that usually appear during summer and early autumn and produce local flash-floods in small catchments; b) Moderate convective events that last less than 24 hours and the maximum precipitation is usually recorded in less than 6 hours, with accumulated rainfall above 200 mm, although in some occasions they can be produced in the context of a longest event; they can produce catastrophic flash floods, and are usually recorded in autumn and end of summer. First ones are more frequent and have an important social impact, due to the great urbanization of some areas in which ephemeral channels are present; they can bring road traffic to a standstill, give rise to power cuts, and sweep away cars parked in the littoral water courses or in adjoining streets, but lose of lives are usually the result of the imprudent behaviour of people. The second type of flash-flood has produced the highest number of casualties when they have affected flood-prone areas with high concentrations of people, and catastrophic damages. However, there is not an agreement about the criteria of damages evaluation, in the same sense that there are notable discrepancies between authors in the criteria used to estimate the vulnerability. A number above 185 flood events have been recorded between 1990 and 2006 in Mediterranean region (Llasat et al, in press). A great part of them have been flash-floods, but, in order to make a good characterization of them, it is needed to recur to the most suitable indicators (Gruntfest, 1997, Messner and Meyer, 2006). The presentation is based on the research developed in the framework of the European Project FLASH (http://flash-eu.tau.ac.il/index.php), and particularly in the analysis in deep of 20 flash-flood cases recorded between 2005 and 2006. This sample has been increased with some selected cases of the European project HYDRATE. Information from all the flash-floods recorded in Catalonia (Spain) since 1982, completed with data about population density and so on, has also been considered.

Partitioning the LIS/OTD Lightning Climatological Dataset into Separate Ground and Cloud Flash Distributions

NASA Technical Reports Server (NTRS)

Koshak, W. J.; Solarkiewicz, R. J.

2009-01-01

Presently, it is not well understood how to best model nitrogen oxides (NOx) emissions from lightning because lightning is highly variable. Peak current, channel length, channel altitude, stroke multiplicity, and the number of flashes that occur in a particular region (i.e., flash density) all influence the amount of lightning NOx produced. Moreover, these 5 variables are not the same for ground and cloud flashes; e.g., cloud flashes normally have lower peak currents, higher altitudes, and higher flash densities than ground flashes [see (Koshak, 2009) for additional details]. Because the existing satellite observations of lightning (Fig. 1) from the Lightning Imaging Sensor/Optical Transient Detector (LIS/OTD) do not distinguish between ground and cloud fashes, which produce different amounts of NOx, it is very difficult to accurately account for the regional/global production of lightning NOx. Hence, the ability to partition the LIS/OTD lightning climatology into separate ground and cloud flash distributions would substantially benefit the atmospheric chemistry modeling community. NOx indirectly influences climate because it controls the concentration of ozone and hydroxyl radicals in the atmosphere. The importance of lightning-produced NOx is empasized throughout the scientific literature (see for example, Huntrieser et al. 1998). In fact, lightning is the most important NOx source in the upper troposphere with a global production rate estimated to vary between 2 and 20 Tg (N)yr(sup -1) (Lee et al., 1997), with more recent estimates of about 6 Tg(N)yr(sup -1) (Martin et al., 2007). In order to make accurate predictions, global chemistry/climate models (as well as regional air quality modells) must more accurately account for the effects of lightning NOx. In particular, the NASA Goddard Institute for Space Studies (GISS) Model E (Schmidt et al., 2005) and the GEOS-CHEM global chemical transport model (Bey et al., 2001) would each benefit from a partitioning of the LIS/OTD lightning climatology. In this study, we introduce a new technique for retrieving the ground flash fraction in a set of N lightning observed from space and that occur within a specific latitude/longitude bin. The method is briefly described and applied to CONUS lightning that have already been partitioned into ground and cloud flashes using independent ground-based observations, in order to assess the accuracy of the retrieval method. The retrieval errors are encouragingly small.

Perceived control and hot flashes in treatment-seeking breast cancer survivors and menopausal women.

PubMed

Carpenter, Janet S; Wu, Jingwei; Burns, Debra S; Yu, Menggang

2012-01-01

Lower perceived control over hot flashes has been linked to fewer coping strategies, more catastrophizing, and greater hot flash severity and distress in midlife women, yet this important concept has not yet been studied in breast cancer survivors. The aim of this study was to explore perceived control over hot flashes and hot flashes in breast cancer survivors compared with midlife women without cancer. Ninety-nine survivors and 138 midlife women completed questionnaires and a prospective, electronic hot flash diary. All data were collected at a baseline assessment before randomization in a behavioral intervention study. Both groups had moderate perceived control over hot flashes. Control was not significantly related to hot flash frequency but was significantly related to hot flash severity, bother, and interference in both groups. A significantly stronger association between control and hot flash interference was found for survivors than for midlife women. Survivors using hot flash treatments perceived less control than did survivors not using hot flash treatments, whereas the opposite was true in midlife women. Findings extend our knowledge of perceived control over hot flashes in both survivors and midlife women. Findings emphasize the importance of continued menopausal symptom assessment and management, support the importance of continuing nursing care even for survivors who are already using hot flash treatment, and suggest that nursing interventions aimed at improving perceived control over hot flashes may be more helpful for survivors than for midlife women.