Physical principles and current status of emerging non-volatile solid state memories

NASA Astrophysics Data System (ADS)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance. [Figure not available: see fulltext.

76 FR 41824 - In the Matter of Certain Flash Memory Chips And Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-15

... Memory Chips And Products Containing Same; Notice of Commission Determination Not To Review an Initial... unopposed motion to terminate in its entirety Inv. No. 337-TA-735, Certain Flash Memory Chips and Products... flash memory chips and products containing same by reason of infringement of certain claims of U.S...

Evaluating Non-In-Place Update Techniques for Flash-Based Transaction Processing Systems

NASA Astrophysics Data System (ADS)

Wang, Yongkun; Goda, Kazuo; Kitsuregawa, Masaru

Recently, flash memory is emerging as the storage device. With price sliding fast, the cost per capacity is approaching to that of SATA disk drives. So far flash memory has been widely deployed in consumer electronics even partly in mobile computing environments. For enterprise systems, the deployment has been studied by many researchers and developers. In terms of the access performance characteristics, flash memory is quite different from disk drives. Without the mechanical components, flash memory has very high random read performance, whereas it has a limited random write performance because of the erase-before-write design. The random write performance of flash memory is comparable with or even worse than that of disk drives. Due to such a performance asymmetry, naive deployment to enterprise systems may not exploit the potential performance of flash memory at full blast. This paper studies the effectiveness of using non-in-place-update (NIPU) techniques through the IO path of flash-based transaction processing systems. Our deliberate experiments using both open-source DBMS and commercial DBMS validated the potential benefits; x3.0 to x6.6 performance improvement was confirmed by incorporating non-in-place-update techniques into file system without any modification of applications or storage devices.

Radiation Tests of Highly scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories--Update 2011

NASA Technical Reports Server (NTRS)

Irom, Farokh; Nguyen, Duc N.

2011-01-01

High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) 32Gb and multi-level cell (MLC) 64Gb NAND flash memories manufactured by Micron Technology.

A Layered Solution for Supercomputing Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grider, Gary

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

76 FR 4375 - In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-25

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-683] In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... the United States after importation of certain MLC flash memory devices and products containing same...

78 FR 49287 - Certain Flash Memory Chips and Products Containing the Same Correction to Notice of Receipt of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-13

... INTERNATIONAL TRADE COMMISSION [Docket No 2971] Certain Flash Memory Chips and Products Containing the Same Correction to Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public..., Certain Flash Memory Chips and Products Containing the Same, DN 2971; the Commission solicited comments on...

A Fault-Tolerant Radiation-Robust Mass Storage Concept for Highly Scaled Flash Memory

NASA Astrophysics Data System (ADS)

Fuchs, Cristian M.; Trinitis, Carsten; Appel, Nicolas; Langer, Martin

2015-09-01

Future spacemissions will require vast amounts of data to be stored and processed aboard spacecraft. While satisfying operational mission requirements, storage systems must guarantee data integrity and recover damaged data throughout the mission. NAND-flash memories have become popular for space-borne high performance mass memory scenarios, though future storage concepts will rely upon highly scaled flash or other memory technologies. With modern flash memory, single bit erasure coding and RAID based concepts are insufficient. Thus, a fully run-time configurable, high performance, dependable storage concept, requiring a minimal set of logic or software. The solution is based on composite erasure coding and can be adjusted for altered mission duration or changing environmental conditions.

Novel conformal organic antireflective coatings for advanced I-line lithography

NASA Astrophysics Data System (ADS)

Deshpande, Shreeram V.; Nowak, Kelly A.; Fowler, Shelly; Williams, Paul; Arjona, Mikko

2001-08-01

Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages in semiconductor devices. First, it offers flexibility of in-circuit programming capability to reduce the loss from programming errors and to significantly reduce commercialization time to market for new devices. Second, flash memory has a double density memory capability through stacked gate structures which increases the memory capability and thus saves significantly on chip real estate. However, due to stacked gate structures the requirements for manufacturing of flash memory devices are significantly different from traditional memory devices. Stacked gate structures also offer unique challenges to lithographic patterning materials such as Bottom Anti-Reflective Coating (BARC) compositions used to achieve CD control and to minimize standing wave effect in photolithography. To be applicable in flash memory manufacturing a BARC should form a conformal coating on high topography of stacked gate features as well as provide the normal anti-reflection properties for CD control. In this paper we report on a new highly conformal advanced i-line BARC for use in design and manufacture of flash memory devices. Conformal BARCs being significantly thinner in trenches than the planarizing BARCs offer the advantage of reducing BARC overetch and thus minimizing resist thickness loss.

A Layered Solution for Supercomputing Storage

ScienceCinema

Grider, Gary

2018-06-13

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

Dynamic Forest: An Efficient Index Structure for NAND Flash Memory

NASA Astrophysics Data System (ADS)

Yang, Chul-Woong; Yong Lee, Ki; Ho Kim, Myoung; Lee, Yoon-Joon

In this paper, we present an efficient index structure for NAND flash memory, called the Dynamic Forest (D-Forest). Since write operations incur high overhead on NAND flash memory, D-Forest is designed to minimize write operations for index updates. The experimental results show that D-Forest significantly reduces write operations compared to the conventional B+-tree.

76 FR 40931 - In the Matter of Certain Flash Memory and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-12

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-685] In the Matter of Certain Flash Memory and... for importation, and the sale within the United States after importation of certain flash memory and... other agreements, written or oral, express or implied, between the parties concerning the subject matter...

75 FR 82071 - In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-29

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission Decision Not To Review the ALJ'S Final... States after importation of certain flash memory chips and products containing the same by reason of...

75 FR 82071 - In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-29

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of Certain Flash Memory Chips and Products Containing Same; Notice of Commission Decision Not To Review the ALJ's Final... flash memory chips and products containing the same by reason of infringement of various claims of...

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

Some Improvements in Utilization of Flash Memory Devices

NASA Technical Reports Server (NTRS)

Gender, Thomas K.; Chow, James; Ott, William E.

2009-01-01

Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically limited to about 1,000,000 erases, (4) as many as 2 percent of the blocks of a given device may fail before the expected end of its life, and (5) to ensure reliability of reading and writing, power must not be interrupted during minimum specified reading and writing times. The first development comprises interrelated software components that regulate reading, writing, and erasure operations to minimize migration of data and unevenness in wear; perform erasures during idle times; quickly make erased blocks available for writing; detect and report failed blocks; maintain the overall state of a flash memory to satisfy real-time performance requirements; and detect and initialize a new flash memory device. The second development is a combination of hardware and software that senses the failure of a main power supply and draws power from a capacitive storage circuit designed to hold enough energy to sustain operation until reading or writing is completed.

Models for Total-Dose Radiation Effects in Non-Volatile Memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip Montgomery; Wix, Steven D.

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models andmore » compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.« less

Performance analysis of three-dimensional-triple-level cell and two-dimensional-multi-level cell NAND flash hybrid solid-state drives

NASA Astrophysics Data System (ADS)

Sakaki, Yukiya; Yamada, Tomoaki; Matsui, Chihiro; Yamaga, Yusuke; Takeuchi, Ken

2018-04-01

In order to improve performance of solid-state drives (SSDs), hybrid SSDs have been proposed. Hybrid SSDs consist of more than two types of NAND flash memories or NAND flash memories and storage-class memories (SCMs). However, the cost of hybrid SSDs adopting SCMs is more expensive than that of NAND flash only SSDs because of the high bit cost of SCMs. This paper proposes unique hybrid SSDs with two-dimensional (2D) horizontal multi-level cell (MLC)/three-dimensional (3D) vertical triple-level cell (TLC) NAND flash memories to achieve higher cost-performance. The 2D-MLC/3D-TLC hybrid SSD achieves up to 31% higher performance than the conventional 2D-MLC/2D-TLC hybrid SSD. The factors of different performance between the proposed hybrid SSD and the conventional hybrid SSD are analyzed by changing its block size, read/write/erase latencies, and write unit of 3D-TLC NAND flash memory, by means of a transaction-level modeling simulator.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Method for programming a flash memory

DOEpatents

Brosky, Alexander R.; Locke, William N.; Maher, Conrado M.

2016-08-23

A method of programming a flash memory is described. The method includes partitioning a flash memory into a first group having a first level of write-protection, a second group having a second level of write-protection, and a third group having a third level of write-protection. The write-protection of the second and third groups is disabled using an installation adapter. The third group is programmed using a Software Installation Device.

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Chen, D.; Friendlich, M.; Carts, M. A.; Seidleck, C. M.; LaBel, K. A.

2011-01-01

We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. Under some circumstanc es, radiation exposure has a significant effect on the retention of f lash memories.

Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface

DTIC Science & Technology

2016-03-17

Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface Austin H. Roach, Matthew J. Gadlage, James D. Ingalls, Aaron...reliability and trust of memories is very important, but because of incomplete documentation provided by commercial vendors and a lack of low-level...shown here that useful information about the trust and reliability of COTS NAND Flash components can be obtained by going beyond the standard product

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

NASA Astrophysics Data System (ADS)

Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

2015-10-01

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e

A hybrid ferroelectric-flash memory cells

NASA Astrophysics Data System (ADS)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Hung, Chinglin; Takeuchi, Ken

2012-04-01

The scaling trends and limitation in sub-20 nm a bulk and silicon-on-insulator (SOI) NAND flash memory is studied by the three-dimensional (3D) device simulation focusing on short channel effects (SCE), channel boost leakage and channel voltage boosting characteristics during the program-inhibit operation. Although increasing punch-through stopper doping concentration is effective for suppressing SCE in bulk NAND cells, the generation of junction leakage becomes serious. On the other hand, SCE can be suppressed by thinning the buried oxide (BOX) in SOI NAND cells. However, the boosted channel voltage decreases by the higher BOX capacitance. It is concluded that the scaling limitation is dominated by the junction leakage and channel boosting capability for bulk and SOI NAND flash cells, respectively, and the scaling limit is decreased to 9 nm using SOI NAND flash memory cells from 13 nm in bulk NAND flash memory cells.

Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage

NASA Astrophysics Data System (ADS)

Matsui, Chihiro; Kinoshita, Reika; Takeuchi, Ken

2018-04-01

A hybrid of storage class memory (SCM) and NAND flash is a promising technology for high performance storage. Error correction is inevitable on SCM and NAND flash because their bit error rate (BER) increases with write/erase (W/E) cycles, data retention, and program/read disturb. In addition, scaling and multi-level cell technologies increase BER. However, error-correcting code (ECC) degrades storage performance because of extra memory reading and encoding/decoding time. Therefore, applicable ECC strength of SCM and NAND flash is evaluated independently by fixing ECC strength of one memory in the hybrid storage. As a result, weak BCH ECC with small correctable bit is recommended for the hybrid storage with large SCM capacity because SCM is accessed frequently. In contrast, strong and long-latency LDPC ECC can be applied to NAND flash in the hybrid storage with large SCM capacity because large-capacity SCM improves the storage performance.

Wearable Wireless Sensor for Multi-Scale Physiological Monitoring

DTIC Science & Technology

2013-10-01

AD_________________ Award Number: W81XWH-12-1-0541 TITLE: Wearable Wireless Sensor for Multi-Scale...TYPE Annual 3. DATES COVERED 25 12- 13 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Wearable Wireless Sensor for Multi-Scale Physiological...peripheral management • Procedures for low power mode activation and wake - up • Routines for start- up state detection • Flash memory management

Role of Non-Volatile Memories in Automotive and IoT Markets

DTIC Science & Technology

2017-03-01

Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...automotive and Internet of Things (IoT) markets . Keywords: Embedded flash; Microcontrollers, Automotive; Internet of Things, IoT; Non-volatile memories...variou s types of non-volatile memories available in the market , bu t the floating-poly based embedded flash memories have been around the longest and

Space Radiation Effects in Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Johnston, A. H.

2001-01-01

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

FPGA Flash Memory High Speed Data Acquisition

NASA Technical Reports Server (NTRS)

Gonzalez, April

2013-01-01

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs

NASA Astrophysics Data System (ADS)

Tokutomi, Tsukasa; Tanakamaru, Shuhei; Iwasaki, Tomoko Ogura; Takeuchi, Ken

2015-09-01

To improve the reliability of NAND Flash memory based solid-state drives (SSDs), error-prediction LDPC (EP-LDPC) has been proposed for multi-level-cell (MLC) NAND Flash memory (Tanakamaru et al., 2012, 2013), which is effective for long retention times. However, EP-LDPC is not as effective for triple-level cell (TLC) NAND Flash memory, because TLC NAND Flash has higher error rates and is more sensitive to program-disturb error. Therefore, advanced error-prediction LDPC (AEP-LDPC) has been proposed for TLC NAND Flash memory (Tokutomi et al., 2014). AEP-LDPC can correct errors more accurately by precisely describing the error phenomena. In this paper, the effects of AEP-LDPC are investigated in a 2×nm TLC NAND Flash memory with temperature characterization. Compared with LDPC-with-BER-only, the SSD's data-retention time is increased by 3.4× and 9.5× at room-temperature (RT) and 85 °C, respectively. Similarly, the acceptable BER is increased by 1.8× and 2.3×, respectively. Moreover, AEP-LDPC can correct errors with pre-determined tables made at higher temperatures to shorten the measurement time before shipping. Furthermore, it is found that one table can cover behavior over a range of temperatures in AEP-LDPC. As a result, the total table size can be reduced to 777 kBytes, which makes this approach more practical.

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

NASA Technical Reports Server (NTRS)

Irom, Farokh; Allen, Gregory R.

2012-01-01

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

NASA Astrophysics Data System (ADS)

Andreani, C.; Senesi, R.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Cazzaniga, C.; Frost, C. D.; Picozza, P.; Gorini, G.; Mancini, R.; Sarno, M.

2018-02-01

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories.

Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2010-01-01

This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

Asymmetric programming: a highly reliable metadata allocation strategy for MLC NAND flash memory-based sensor systems.

PubMed

Huang, Min; Liu, Zhaoqing; Qiao, Liyan

2014-10-10

While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash memory. In particular, it's critical to enhance metadata reliability, which occupies only a small portion of the storage space, but maintains the critical information of the file system and the address translations of the storage system. Metadata damage will cause the system to crash or a large amount of data to be lost. This paper presents Asymmetric Programming, a highly reliable metadata allocation strategy for MLC NAND flash memory storage systems. Our technique exploits for the first time the property of the multi-page architecture of MLC NAND flash memory to improve the reliability of metadata. The basic idea is to keep metadata in most significant bit (MSB) pages which are more reliable than least significant bit (LSB) pages. Thus, we can achieve relatively low bit error rates for metadata. Based on this idea, we propose two strategies to optimize address mapping and garbage collection. We have implemented Asymmetric Programming on a real hardware platform. The experimental results show that Asymmetric Programming can achieve a reduction in the number of page errors of up to 99.05% with the baseline error correction scheme.

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems

PubMed Central

Huang, Min; Liu, Zhaoqing; Qiao, Liyan

2014-01-01

While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash memory. In particular, it's critical to enhance metadata reliability, which occupies only a small portion of the storage space, but maintains the critical information of the file system and the address translations of the storage system. Metadata damage will cause the system to crash or a large amount of data to be lost. This paper presents Asymmetric Programming, a highly reliable metadata allocation strategy for MLC NAND flash memory storage systems. Our technique exploits for the first time the property of the multi-page architecture of MLC NAND flash memory to improve the reliability of metadata. The basic idea is to keep metadata in most significant bit (MSB) pages which are more reliable than least significant bit (LSB) pages. Thus, we can achieve relatively low bit error rates for metadata. Based on this idea, we propose two strategies to optimize address mapping and garbage collection. We have implemented Asymmetric Programming on a real hardware platform. The experimental results show that Asymmetric Programming can achieve a reduction in the number of page errors of up to 99.05% with the baseline error correction scheme. PMID:25310473

Portable Electromyograph

NASA Technical Reports Server (NTRS)

De Luca, Gianluca; De Luca, Carlo J.; Bergman, Per

2004-01-01

A portable electronic apparatus records electromyographic (EMG) signals in as many as 16 channels at a sampling rate of 1,024 Hz in each channel. The apparatus (see figure) includes 16 differential EMG electrodes (each electrode corresponding to one channel) with cables and attachment hardware, reference electrodes, an input/output-and-power-adapter unit, a 16-bit analog-to-digital converter, and a hand-held computer that contains a removable 256-MB flash memory card. When all 16 EMG electrodes are in use, full-bandwidth data can be recorded in each channel for as long as 8 hours. The apparatus is powered by a battery and is small enough that it can be carried in a waist pouch. The computer is equipped with a small screen that can be used to display the incoming signals on each channel. Amplitude and time adjustments of this display can be made easily by use of touch buttons on the screen. The user can also set up a data-acquisition schedule to conform to experimental protocols or to manage battery energy and memory efficiently. Once the EMG data have been recorded, the flash memory card is removed from the EMG apparatus and placed in a flash-memory- card-reading external drive unit connected to a personal computer (PC). The PC can then read the data recorded in the 16 channels. Preferably, before further analysis, the data should be stored in the hard drive of the PC. The data files are opened and viewed on the PC by use of special- purpose software. The software for operation of the apparatus resides in a random-access memory (RAM), with backup power supplied by a small internal lithium cell. A backup copy of this software resides on the flash memory card. In the event of loss of both main and backup battery power and consequent loss of this software, the backup copy can be used to restore the RAM copy after power has been restored. Accessories for this device are also available. These include goniometers, accelerometers, foot switches, and force gauges.

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

NASA Technical Reports Server (NTRS)

Li, Yue (Inventor); Bruck, Jehoshua (Inventor)

2018-01-01

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Berg, Melanie; Friendlich, Mark; Wilcox, Ted; Seidleck, Christina; LaBel, Kenneth A.; Irom, Farokh; Buchner, Steven P.; McMorrow, Dale; Mavis, David G.;

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Multi-Level Bitmap Indexes for Flash Memory Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kesheng; Madduri, Kamesh; Canon, Shane

2010-07-23

Due to their low access latency, high read speed, and power-efficient operation, flash memory storage devices are rapidly emerging as an attractive alternative to traditional magnetic storage devices. However, tests show that the most efficient indexing methods are not able to take advantage of the flash memory storage devices. In this paper, we present a set of multi-level bitmap indexes that can effectively take advantage of flash storage devices. These indexing methods use coarsely binned indexes to answer queries approximately, and then use finely binned indexes to refine the answers. Our new methods read significantly lower volumes of data atmore » the expense of an increased disk access count, thus taking full advantage of the improved read speed and low access latency of flash devices. To demonstrate the advantage of these new indexes, we measure their performance on a number of storage systems using a standard data warehousing benchmark called the Set Query Benchmark. We observe that multi-level strategies on flash drives are up to 3 times faster than traditional indexing strategies on magnetic disk drives.« less

75 FR 11909 - In the Matter of: Certain Flash Memory Chips and Products Containing Same; Notice of Commission...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-12

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-664] In the Matter of: Certain Flash Memory Chips and Products Containing Same; Notice of Commission Determination Not To Review an Initial..., and the [[Page 11910

Analysis of the Evaluation of a New Glucose Meter with Integrated Self-Management Software and USB Connectivity

PubMed Central

Crowe, Daniel J

2011-01-01

Glucose meter technology has not kept up with the advances that have occurred in other sectors in mobile and health care technology. A new device that combines strip-based capillary blood glucose monitoring and USB flash drive technology is evaluated in an industry-funded study in a cohort of patients and health care professionals. The expanded memory capacity of flash drives allows the software program to be stored on the device for analyzing the blood glucose readings in memory. The study analyzes the device for precision and accuracy as well as for ease of adaptability and usage. This analysis focuses on shortcomings in the design of the study and methodology in addition to features of the hardware device itself. Although the device has distinct advantages over many devices on the market, a challenge is made to device manufacturers to encourage further innovation. PMID:22027309

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.

PubMed

Liu, Chunsen; Yan, Xiao; Wang, Jianlu; Ding, Shijin; Zhou, Peng; Zhang, David Wei

2017-05-01

Atomic crystal charge trap memory, as a new concept of nonvolatile memory, possesses an atomic level flatness interface, which makes them promising candidates for replacing conventional FLASH memory in the future. Here, a 2D material WSe 2 and a 3D Al 2 O 3 /HfO 2 /Al 2 O 3 charge-trap stack are combined to form a charge-trap memory device with a separation of control gate and memory stack. In this device, the charges are erased/written by built-in electric field, which significantly enhances the write speed to 1 µs. More importantly, owing to the elaborate design of the energy band structure, the memory only captures electrons with a large electron memory window over 20 V and trap selectivity about 13, both of them are the state-of-the-art values ever reported in FLASH memory based on 2D materials. Therefore, it is demonstrated that high-performance charge trap memory based on WSe 2 without the fatal overerase issue in conventional FLASH memory can be realized to practical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radiation Issues and Applications of Floating Gate Memories

NASA Technical Reports Server (NTRS)

Scheick, L. Z.; Nguyen, D. N.

2000-01-01

The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

Nonvolatile Memory Technology for Space Applications

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics

NASA Astrophysics Data System (ADS)

Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo

2014-01-01

The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.

76 FR 13207 - In the Matter of Certain Flash Memory and Products Containing Same Notice of Request for...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-10

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-685] In the Matter of Certain Flash Memory and Products Containing Same Notice of Request for Statements on the Public Interest Section 337 of the Tariff Act of 1930 provides that if the Commission finds a violation it shall exclude the...

Radiation Tests on 2Gb NAND Flash Memories

NASA Technical Reports Server (NTRS)

Nguyen, Duc N.; Guertin, Steven M.; Patterson, J. D.

2006-01-01

We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

From Secure Memories to Smart Card Security

NASA Astrophysics Data System (ADS)

Handschuh, Helena; Trichina, Elena

Non-volatile memory is essential in most embedded security applications. It will store the key and other sensitive materials for cryptographic and security applications. In this chapter, first an overview is given of current flash memory architectures. Next the standard security features which form the basis of so-called secure memories are described in more detail. Smart cards are a typical embedded application that is very vulnerable to attacks and that at the same time has a high need for secure non-volatile memory. In the next part of this chapter, the secure memories of so-called flash-based high-density smart cards are described. It is followed by a detailed analysis of what the new security challenges for such objects are.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

NASA Astrophysics Data System (ADS)

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-01

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

PubMed

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-23

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

NASA Astrophysics Data System (ADS)

Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng

2016-12-01

This paper investigates the impact of post-metallization annealing (PMA) in pure nitrogen ambient on the reliability of 65 nm NOR-type floating-gate flash memory devices. The experimental results show that, with PMA process, the cycling performance of flash cells, especially for the erasing speed is obviously degraded compared to that without PMA. It is found that the bulk oxide traps and tunnel oxide/Si interface traps are significantly increased with PMA treatment. The water/moisture residues left in the interlayer dielectric layers diffuse to tunnel oxide during PMA process is considered to be responsible for these traps generation, which further enhances the degradation of erase performance. Skipping PMA treatment is proposed to suppress the water diffusion effect on erase performance degradation of flash cells.

Nonvolatile memory chips: critical technology for high-performance recce systems

NASA Astrophysics Data System (ADS)

Kaufman, Bruce

2000-11-01

Airborne recce systems universally require nonvolatile storage of recorded data. Both present and next generation designs make use of flash memory chips. Flash memory devices are in high volume use for a variety of commercial products ranging form cellular phones to digital cameras. Fortunately, commercial applications call for increasing capacities and fast write times. These parameters are important to the designer of recce recorders. Of economic necessity COTS devices are used in recorders that must perform in military avionics environments. Concurrently, recording rates are moving to $GTR10Gb/S. Thus to capture imagery for even a few minutes of record time, tactically meaningful solid state recorders will require storage capacities in the 100s of Gbytes. Even with memory chip densities at present day 512Mb, such capacities require thousands of chips. The demands on packaging technology are daunting. This paper will consider the differing flash chip architectures, both available and projected and discuss the impact on recorder architecture and performance. Emerging nonvolatile memory technologies, FeRAM AND MIRAM will be reviewed with regard to their potential use in recce recorders.

Development of highly reliable static random access memory for 40-nm embedded split gate-MONOS flash memory

NASA Astrophysics Data System (ADS)

Okamoto, Shin-ichi; Maekawa, Kei-ichi; Kawashima, Yoshiyuki; Shiba, Kazutoshi; Sugiyama, Hideki; Inoue, Masao; Nishida, Akio

2015-04-01

High quality static random access memory (SRAM) for 40-nm embedded MONOS flash memory with split gate (SG-MONOS) was developed. Marginal failure, which results in threshold voltage/drain current tailing and outliers of SRAM transistors, occurs when using a conventional SRAM structure. These phenomena can be explained by not only gate depletion but also partial depletion and percolation path formation in the MOS channel. A stacked poly-Si gate structure can suppress these phenomena and achieve high quality SRAM without any defects in the 6σ level and with high affinity to the 40-nm SG-MONOS process was developed.

A hot hole-programmed and low-temperature-formed SONOS flash memory

PubMed Central

2013-01-01

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film. PMID:23899050

A large-scale cryoelectronic system for biological sample banking

NASA Astrophysics Data System (ADS)

Shirley, Stephen G.; Durst, Christopher H. P.; Fuchs, Christian C.; Zimmermann, Heiko; Ihmig, Frank R.

2009-11-01

We describe a polymorphic electronic infrastructure for managing biological samples stored over liquid nitrogen. As part of this system we have developed new cryocontainers and carrier plates attached to Flash memory chips to have a redundant and portable set of data at each sample. Our experimental investigations show that basic Flash operation and endurance is adequate for the application down to liquid nitrogen temperatures. This identification technology can provide the best sample identification, documentation and tracking that brings added value to each sample. The first application of the system is in a worldwide collaborative research towards the production of an AIDS vaccine. The functionality and versatility of the system can lead to an essential optimization of sample and data exchange for global clinical studies.

Minimizing the Disruptive Effects of Prospective Memory in Simulated Air Traffic Control

PubMed Central

Loft, Shayne; Smith, Rebekah E.; Remington, Roger

2015-01-01

Prospective memory refers to remembering to perform an intended action in the future. Failures of prospective memory can occur in air traffic control. In two experiments, we examined the utility of external aids for facilitating air traffic management in a simulated air traffic control task with prospective memory requirements. Participants accepted and handed-off aircraft and detected aircraft conflicts. The prospective memory task involved remembering to deviate from a routine operating procedure when accepting target aircraft. External aids that contained details of the prospective memory task appeared and flashed when target aircraft needed acceptance. In Experiment 1, external aids presented either adjacent or non-adjacent to each of the 20 target aircraft presented over the 40min test phase reduced prospective memory error by 11% compared to a condition without external aids. In Experiment 2, only a single target aircraft was presented a significant time (39min–42min) after presentation of the prospective memory instruction, and the external aids reduced prospective memory error by 34%. In both experiments, costs to the efficiency of non-prospective memory air traffic management (non-target aircraft acceptance response time, conflict detection response time) were reduced by non-adjacent aids compared to no aids or adjacent aids. In contrast, in both experiments, the efficiency of the prospective memory air traffic management (target aircraft acceptance response time) was facilitated by adjacent aids compared to non-adjacent aids. Together, these findings have potential implications for the design of automated alerting systems to maximize multi-task performance in work settings where operators monitor and control demanding perceptual displays. PMID:24059825

Assessing Server Fault Tolerance and Disaster Recovery Implementation in Thin Client Architectures

DTIC Science & Technology

2007-09-01

server • Windows 2003 server Processor AMD Geode GX Memory 512MB Flash/256MB DDR RAM I/O/Peripheral Support • VGA-type video output (DB-15...2000 Advanced Server Processor AMD Geode NX 1500 Memory • 256MB or 512MB or 1GB DDR SDRAM • 1GB or 512MB Flash I/O/Peripheral Support • SiS741 GX

TID and SEE Response of an Advanced Samsung 4G NAND Flash Memory

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Friendlich, M.; Howard, J. W.; Berg, M. D.; Kim, H. S.; Irwin, T. L.; LaBel, K. A.

2007-01-01

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment.

Data Movement Dominates: Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacob, Bruce L.

Over the past three years in this project, what we have observed is that the primary reason for data movement in large-scale systems is that the per-node capacity is not large enough—i.e., one of the solutions to the data-movement problem (certainly not the only solution that is required, but a significant one nonetheless) is to increase per-node capacity so that inter-node traffic is reduced. This unfortunately is not as simple as it sounds. Today’s main memory systems for datacenters, enterprise computing systems, and supercomputers, fail to provide high per-socket capacity [Dirik & Jacob 2009; Cooper-Balis et al. 2012], except atmore » extremely high price points (factors of 10–100x the cost/bit of consumer main-memory systems) [Stokes 2008]. The reason is that our choice of technology for today’s main memory systems—i.e., DRAM, which we have used as a main-memory technology since the 1970s [Jacob et al. 2007]—can no longer keep up with our needs for density and price per bit. Main memory systems have always been built from the cheapest, densest, lowest-power memory technology available, and DRAM is no longer the cheapest, the densest, nor the lowest-power storage technology out there. It is now time for DRAM to go the way that SRAM went: move out of the way for a cheaper, slower, denser storage technology, and become a cache instead. This inflection point has happened before, in the context of SRAM yielding to DRAM. There was once a time that SRAM was the storage technology of choice for all main memories [Tomasulo 1967; Thornton 1970; Kidder 1981]. However, once DRAM hit volume production in the 1970s and 80s, it supplanted SRAM as a main memory technology because it was cheaper, and it was denser. It also happened to be lower power, but that was not the primary consideration of the day. At the time, it was recognized that DRAM was much slower than SRAM, but it was only at the supercomputer level (For instance the Cray X-MP in the 1980s and its follow-on, the Cray Y-MP, in the 1990s) that could one afford to build ever- larger main memories out of SRAM—the reasoning for moving to DRAM was that an appropriately designed memory hierarchy, built of DRAM as main memory and SRAM as a cache, would approach the performance of SRAM, at the price-per-bit of DRAM [Mashey 1999]. Today it is quite clear that, were one to build an entire multi-gigabyte main memory out of SRAM instead of DRAM, one could improve the performance of almost any computer system by up to an order of magnitude—but this option is not even considered, because to build that system would be prohibitively expensive. It is now time to revisit the same design choice in the context of modern technologies and modern systems. For reasons both technical and economic, we can no longer afford to build ever-larger main memory systems out of DRAM. Flash memory, on the other hand, is significantly cheaper and denser than DRAM and therefore should take its place. While it is true that flash is significantly slower than DRAM, one can afford to build much larger main memories out of flash than out of DRAM, and we show that an appropriately designed memory hierarchy, built of flash as main memory and DRAM as a cache, will approach the performance of DRAM, at the price-per-bit of flash. In our studies as part of this project, we have investigated Non-Volatile Main Memory (NVMM), a new main-memory architecture for large-scale computing systems, one that is specifically designed to address the weaknesses described previously. In particular, it provides the following features: non-volatility: The bulk of the storage is comprised of NAND flash, and in this organization DRAM is used only as a cache, not as main memory. Furthermore, the flash is journaled, which means that operations such as checkpoint/restore are already built into the system. 1+ terabytes of storage per socket: SSDs and DRAM DIMMs have roughly the same form factor (several square inches of PCB surface area), and terabyte SSDs are now commonplace. performance approaching that of DRAM: DRAM is used as a cache to the flash system. price-per-bit approaching that of NAND: Flash is currently well under $0.50 per gigabyte; DDR3 SDRAM is currently just over $10 per gigabyte [Newegg 2014]. Even today, one can build an easily affordable main memory system with a terabyte or more of NAND storage per CPU socket (which would be extremely expensive were one to use DRAM), and our cycle- accurate, full-system experiments show that this can be done at a performance point that lies within a factor of two of DRAM.« less

Saccades to remembered targets: the effects of smooth pursuit and illusory stimulus motion

NASA Technical Reports Server (NTRS)

Zivotofsky, A. Z.; Rottach, K. G.; Averbuch-Heller, L.; Kori, A. A.; Thomas, C. W.; Dell'Osso, L. F.; Leigh, R. J.

1996-01-01

1. Measurements were made in four normal human subjects of the accuracy of saccades to remembered locations of targets that were flashed on a 20 x 30 deg random dot display that was either stationary or moving horizontally and sinusoidally at +/-9 deg at 0.3 Hz. During the interval between the target flash and the memory-guided saccade, the "memory period" (1.4 s), subjects either fixated a stationary spot or pursued a spot moving vertically sinusoidally at +/-9 deg at 0.3 Hz. 2. When saccades were made toward the location of targets previously flashed on a stationary background as subjects fixated the stationary spot, median saccadic error was 0.93 deg horizontally and 1.1 deg vertically. These errors were greater than for saccades to visible targets, which had median values of 0.59 deg horizontally and 0.60 deg vertically. 3. When targets were flashed as subjects smoothly pursued a spot that moved vertically across the stationary background, median saccadic error was 1.1 deg horizontally and 1.2 deg vertically, thus being of similar accuracy to when targets were flashed during fixation. In addition, the vertical component of the memory-guided saccade was much more closely correlated with the "spatial error" than with the "retinal error"; this indicated that, when programming the saccade, the brain had taken into account eye movements that occurred during the memory period. 4. When saccades were made to targets flashed during attempted fixation of a stationary spot on a horizontally moving background, a condition that produces a weak Duncker-type illusion of horizontal movement of the primary target, median saccadic error increased horizontally to 3.2 deg but was 1.1 deg vertically. 5. When targets were flashed as subjects smoothly pursued a spot that moved vertically on the horizontally moving background, a condition that induces a strong illusion of diagonal target motion, median saccadic error was 4.0 deg horizontally and 1.5 deg vertically; thus the horizontal error was greater than under any other experimental condition. 6. In most trials, the initial saccade to the remembered target was followed by additional saccades while the subject was still in darkness. These secondary saccades, which were executed in the absence of visual feedback, brought the eye closer to the target location. During paradigms involving horizontal background movement, these corrections were more prominent horizontally than vertically. 7. Further measurements were made in two subjects to determine whether inaccuracy of memory-guided saccades, in the horizontal plane, was due to mislocalization at the time that the target flashed, misrepresentation of the trajectory of the pursuit eye movement during the memory period, or both. 8. The magnitude of the saccadic error, both with and without corrections made in darkness, was mislocalized by approximately 30% of the displacement of the background at the time that the target flashed. The magnitude of the saccadic error also was influenced by net movement of the background during the memory period, corresponding to approximately 25% of net background movement for the initial saccade and approximately 13% for the final eye position achieved in darkness. 9. We formulated simple linear models to test specific hypotheses about which combinations of signals best describe the observed saccadic amplitudes. We tested the possibilities that the brain made an accurate memory of target location and a reliable representation of the eye movement during the memory period, or that one or both of these was corrupted by the illusory visual stimulus. Our data were best accounted for by a model in which both the working memory of target location and the internal representation of the horizontal eye movements were corrupted by the illusory visual stimulus. We conclude that extraretinal signals played only a minor role, in comparison with visual estimates of the direction of gaze, in planning eye movements to remembered targ.

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

A qualitative study on personal information management (PIM) in clinical and basic sciences faculty members of a medical university in Iran

PubMed Central

Sedghi, Shahram; Abdolahi, Nida; Azimi, Ali; Tahamtan, Iman; Abdollahi, Leila

2015-01-01

Background: Personal Information Management (PIM) refers to the tools and activities to save and retrieve personal information for future uses. This study examined the PIM activities of faculty members of Iran University of Medical Sciences (IUMS) regarding their preferred PIM tools and four aspects of acquiring, organizing, storing and retrieving personal information. Methods: The qualitative design was based on phenomenology approach and we carried out 37 interviews with clinical and basic sciences faculty members of IUMS in 2014. The participants were selected using a random sampling method. All interviews were recorded by a digital voice recorder, and then transcribed, codified and finally analyzed using NVivo 8 software. Results: The use of PIM electronic tools (e-tools) was below expectation among the studied sample and just 37% had reasonable knowledge of PIM e-tools such as, external hard drivers, flash memories etc. However, all participants used both paper and electronic devices to store and access information. Internal mass memories (in Laptops) and flash memories were the most used e-tools to save information. Most participants used "subject" (41.00%) and "file name" (33.7 %) to save, organize and retrieve their stored information. Most users preferred paper-based rather than electronic tools to keep their personal information. Conclusion: Faculty members had little knowledge about PIM techniques and tools. Those who organized personal information could easier retrieve the stored information for future uses. Enhancing familiarity with PIM tools and training courses of PIM tools and techniques are suggested. PMID:26793648

Radiation Effects on Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Nguyen, D. N.; Guertin, S.; Swift, G. M.; Johnston, A. H.

1998-01-01

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

A fast and low-power microelectromechanical system-based non-volatile memory device

PubMed Central

Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

2011-01-01

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

Interactions of numerical and temporal stimulus characteristics on the control of response location by brief flashes of light.

PubMed

Fetterman, J Gregor; Killeen, P Richard

2011-09-01

Pigeons pecked on three keys, responses to one of which could be reinforced after 3 flashes of the houselight, to a second key after 6, and to a third key after 12. The flashes were arranged according to variable-interval schedules. Response allocation among the keys was a function of the number of flashes. When flashes were omitted, transitions occurred very late. Increasing flash duration produced a leftward shift in the transitions along a number axis. Increasing reinforcement probability produced a leftward shift, and decreasing reinforcement probability produced a rightward shift. Intermixing different flash rates within sessions separated allocations: Faster flash rates shifted the functions sooner in real time, but later in terms of flash count, and conversely for slower flash rates. A model of control by fading memories of number and time was proposed.

3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate

NASA Astrophysics Data System (ADS)

Oh, Jae-Sub; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung-Kyu; Lee, Hi-Deok; Lee, Ga-Won

2013-08-01

In this paper, a gate-all-around bandgap-engineered silicon-oxide-nitride-oxide-silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.

Effects of botanicals and combined hormone therapy on cognition in postmenopausal women.

PubMed

Maki, Pauline M; Rubin, Leah H; Fornelli, Deanne; Drogos, Lauren; Banuvar, Suzanne; Shulman, Lee P; Geller, Stacie E

2009-01-01

The aim of this study was to characterize the effects of red clover, black cohosh, and combined hormone therapy on cognitive function in comparison to placebo in women with moderate to severe vasomotor symptoms. In a phase II randomized, double-blind, placebo-controlled study, 66 midlife women (of 89 from a parent study; mean age, 53 y) with 35 or more weekly hot flashes were randomized to receive red clover (120 mg), black cohosh (128 mg), 0.625 mg conjugated equine estrogens plus 2.5 mg medroxyprogesterone acetate (CEE/MPA), or placebo. Participants completed measures of verbal memory (primary outcome) and other cognitive measures (secondary outcomes) before and during the 12th treatment month. A subset of 19 women completed objective, physiological measures of hot flashes using ambulatory skin conductance monitors. Neither of the botanical treatments had an impact on any cognitive measure. Compared with placebo, CEE/MPA led to a greater decline in verbal learning (one of five verbal memory measures). This effect just missed statistical significance (P = 0.057) in unadjusted analyses but reached significance (P = 0.02) after adjusting for vasomotor symptoms. Neither of the botanical treatment groups showed a change in verbal memory that differed from the placebo group (Ps > 0.28), even after controlling for improvements in hot flashes. In secondary outcomes, CEE/MPA led to a decrease in immediate digit recall and an improvement in letter fluency. Only CEE/MPA significantly reduced objective hot flashes. Results indicate that a red clover (phytoestrogen) supplement or black cohosh has no effects on cognitive function. CEE/MPA reduces objective hot flashes but worsens some aspects of verbal memory.

Effects of Botanicals and Combined Hormone Therapy on Cognition in Postmenopausal Women

PubMed Central

Maki, Pauline M.; Rubin, Leah H.; Fornelli, Deanne; Drogos, Lauren; Banuvar, Suzanne; Shulman, Lee P.; Geller, Stacie E.

2009-01-01

Objective To characterize the effects of red clover, black cohosh, and combined hormone therapy on cognitive function in comparison to placebo in women with moderate to severe vasomotor symptoms. Design In a Phase II randomized, double-blind, placebo-controlled study, 66 midlife women (out of 89 from a parent study; mean age=53 y) with ≥ 35 weekly hot flashes were randomized to receive red clover (120 mg), black cohosh (128 mg), CEE/MPA (0.625 mg conjugated equine estrogens plus 2.5 mg medroxyprogesterone acetate), or placebo. Participants completed measures of verbal memory (primary outcome) and other cognitive measures (secondary outcomes) before and during the 12th treatment month. A subset of 19 women completed objective, physiological measures of hot flashes using ambulatory skin conductance monitors. Results There was no impact of either of the botanical treatments on any cognitive measure. Compared to placebo, CEE/MPA led to greater decline in verbal learning (one of five verbal memory measures). This effect just missed statistical significance (p=0.057) in unadjusted analyses, but reached significance (p=.02) after adjusting for vasomotor symptoms. Neither botanical treatment group showed a change in verbal memory that differed from the placebo group (ps>0.28), even after controlling for improvements in hot flashes. In secondary outcomes, CEE/MPA led to a decrease in immediate digit recall and an improvement in letter fluency. Only CEE/MPA significantly reduced objective hot flashes. Conclusions Results indicate no effects of a red clover (phytoestrogen) supplement or black cohosh on cognitive function. CEE/MPA reduces objective hot flashes but worsens some aspects of verbal memory. PMID:19590458

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

NASA Astrophysics Data System (ADS)

Tomita, Toshihiro; Miyaji, Kousuke

2015-04-01

The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude ΔVth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, ΔVth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, ΔVth distribution slope λ cannot be determined by only considering RDF and single trap.

CoNNeCT Baseband Processor Module

NASA Technical Reports Server (NTRS)

Yamamoto, Clifford K; Jedrey, Thomas C.; Gutrich, Daniel G.; Goodpasture, Richard L.

2011-01-01

A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs). The BPM was developed from a requirement to provide sufficient computing power and memory storage to conduct experiments for a Software Defined Radio (SDR) to be implemented. The flight SDR uses the AT697 SPARC processor with on-chip data and instruction cache. The non-volatile memory has been increased from a 20-Mbit EEPROM (electrically erasable programmable read only memory) to a 4-Gbit Flash, managed by the RTAX2000 Housekeeper, allowing more programs and FPGA bit-files to be stored. The volatile memory has been increased from a 20-Mbit SRAM (static random access memory) to a 1.25-Gbit SDRAM (synchronous dynamic random access memory), providing additional memory space for more complex operating systems and programs to be executed on the SPARC. All memory is EDAC (error detection and correction) protected, while the SPARC processor implements fault protection via TMR (triple modular redundancy) architecture. Further capability over prior BPM designs includes the addition of a second FPGA to implement features beyond the resources of a single FPGA. Both FPGAs are implemented with Xilinx Virtex-II and are interconnected by a 96-bit bus to facilitate data exchange. Dedicated 1.25- Gbit SDRAMs are wired to each Xilinx FPGA to accommodate high rate data buffering for SDR applications as well as independent SpaceWire interfaces. The RTAX2000 manages scrub and configuration of each Xilinx.

The influence of cognitive load on spatial search performance.

PubMed

Longstaffe, Kate A; Hood, Bruce M; Gilchrist, Iain D

2014-01-01

During search, executive function enables individuals to direct attention to potential targets, remember locations visited, and inhibit distracting information. In the present study, we investigated these executive processes in large-scale search. In our tasks, participants searched a room containing an array of illuminated locations embedded in the floor. The participants' task was to press the switches at the illuminated locations on the floor so as to locate a target that changed color when pressed. The perceptual salience of the search locations was manipulated by having some locations flashing and some static. Participants were more likely to search at flashing locations, even when they were explicitly informed that the target was equally likely to be at any location. In large-scale search, attention was captured by the perceptual salience of the flashing lights, leading to a bias to explore these targets. Despite this failure of inhibition, participants were able to restrict returns to previously visited locations, a measure of spatial memory performance. Participants were more able to inhibit exploration to flashing locations when they were not required to remember which locations had previously been visited. A concurrent digit-span memory task further disrupted inhibition during search, as did a concurrent auditory attention task. These experiments extend a load theory of attention to large-scale search, which relies on egocentric representations of space. High cognitive load on working memory leads to increased distractor interference, providing evidence for distinct roles for the executive subprocesses of memory and inhibition during large-scale search.

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

A Scalable Multicore Architecture With Heterogeneous Memory Structures for Dynamic Neuromorphic Asynchronous Processors (DYNAPs).

PubMed

Moradi, Saber; Qiao, Ning; Stefanini, Fabio; Indiveri, Giacomo

2018-02-01

Neuromorphic computing systems comprise networks of neurons that use asynchronous events for both computation and communication. This type of representation offers several advantages in terms of bandwidth and power consumption in neuromorphic electronic systems. However, managing the traffic of asynchronous events in large scale systems is a daunting task, both in terms of circuit complexity and memory requirements. Here, we present a novel routing methodology that employs both hierarchical and mesh routing strategies and combines heterogeneous memory structures for minimizing both memory requirements and latency, while maximizing programming flexibility to support a wide range of event-based neural network architectures, through parameter configuration. We validated the proposed scheme in a prototype multicore neuromorphic processor chip that employs hybrid analog/digital circuits for emulating synapse and neuron dynamics together with asynchronous digital circuits for managing the address-event traffic. We present a theoretical analysis of the proposed connectivity scheme, describe the methods and circuits used to implement such scheme, and characterize the prototype chip. Finally, we demonstrate the use of the neuromorphic processor with a convolutional neural network for the real-time classification of visual symbols being flashed to a dynamic vision sensor (DVS) at high speed.

SSD Market Overview

NASA Astrophysics Data System (ADS)

Wong, G.

The unparalleled cost and form factor advantages of NAND flash memory has driven 35 mm photographic film, floppy disks and one-inch hard drives to extinction. Due to its compelling price/performance characteristics, NAND Flash memory is now expanding its reach into the once-exclusive domain of hard disk drives and DRAM in the form of Solid State Drives (SSDs). Driven by the proliferation of thin and light mobile devices and the need for near-instantaneous accessing and sharing of content through the cloud, SSDs are expected to become a permanent fixture in the computing infrastructure.

Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

NASA Astrophysics Data System (ADS)

Edmonds, Larry D.; Irom, Farokh; Allen, Gregory R.

2017-08-01

A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Fault-tolerant NAND-flash memory module for next-generation scientific instruments

NASA Astrophysics Data System (ADS)

Lange, Tobias; Michel, Holger; Fiethe, Björn; Michalik, Harald; Walter, Dietmar

2015-10-01

Remote sensing instruments on today's space missions deliver a high amount of data which is typically evaluated on ground. Especially for deep space missions the telemetry downlink is very limited which creates the need for the scientific evaluation and thereby a reduction of data volume already on-board the spacecraft. A demanding example is the Polarimetric and Helioseismic Imager (PHI) instrument on Solar Orbiter. To enable on-board offline processing for data reduction, the instrument has to be equipped with a high capacity memory module. The module is based on non-volatile NAND-Flash technology, which requires more advanced operation than volatile DRAM. Unlike classical mass memories, the module is integrated into the instrument and allows readback of data for processing. The architecture and safe operation of such kind of memory module is described in the following paper.

ASA-FTL: An adaptive separation aware flash translation layer for solid state drives

DOE PAGES

Xie, Wei; Chen, Yong; Roth, Philip C

2016-11-03

Here, the flash-memory based Solid State Drive (SSD) presents a promising storage solution for increasingly critical data-intensive applications due to its low latency (high throughput), high bandwidth, and low power consumption. Within an SSD, its Flash Translation Layer (FTL) is responsible for exposing the SSD’s flash memory storage to the computer system as a simple block device. The FTL design is one of the dominant factors determining an SSD’s lifespan and performance. To reduce the garbage collection overhead and deliver better performance, we propose a new, low-cost, adaptive separation-aware flash translation layer (ASA-FTL) that combines sampling, data clustering and selectivemore » caching of recency information to accurately identify and separate hot/cold data while incurring minimal overhead. We use sampling for light-weight identification of separation criteria, and our dedicated selective caching mechanism is designed to save the limited RAM resource in contemporary SSDs. Using simulations of ASA-FTL with both real-world and synthetic workloads, we have shown that our proposed approach reduces the garbage collection overhead by up to 28% and the overall response time by 15% compared to one of the most advanced existing FTLs. We find that the data clustering using a small sample size provides significant performance benefit while only incurring a very small computation and memory cost. In addition, our evaluation shows that ASA-FTL is able to adapt to the changes in the access pattern of workloads, which is a major advantage comparing to existing fixed data separation methods.« less

Optimal proximity correction: application for flash memory design

NASA Astrophysics Data System (ADS)

Chen, Y. O.; Huang, D. L.; Sung, K. T.; Chiang, J. J.; Yu, M.; Teng, F.; Chu, Lung; Rey, Juan C.; Bernard, Douglas A.; Li, Jiangwei; Li, Junling; Moroz, V.; Boksha, Victor V.

1998-06-01

Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure. In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by three- dimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding. As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.

CD uniformity control for thick resist process

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Wang, Weihung; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2017-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked flash cell array has been proposed. In constructing 3D NAND flash memories, the higher bit number per area is achieved by increasing the number of stacked layers. Thus the so-called "staircase" patterning to form electrical connection between memory cells and word lines has become one of the primarily critical processes in 3D memory manufacture. To provide controllable critical dimension (CD) with good uniformity involving thick photo-resist has also been of particular concern for staircase patterning. The CD uniformity control has been widely investigated with relatively thinner resist associated with resolution limit dimension but thick resist coupling with wider dimension. This study explores CD uniformity control associated with thick photo-resist processing. Several critical parameters including exposure focus, exposure dose, baking condition, pattern size and development recipe, were found to strongly correlate with the thick photo-resist profile accordingly affecting the CD uniformity control. To minimize the within-wafer CD variation, the slightly tapered resist profile is proposed through well tailoring the exposure focus and dose together with optimal development recipe. Great improvements on DCD (ADI CD) and ECD (AEI CD) uniformity as well as line edge roughness were achieved through the optimization of photo resist profile.

Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation

NASA Astrophysics Data System (ADS)

Kim, Do-Bin; Kwon, Dae Woong; Kim, Seunghyun; Lee, Sang-Ho; Park, Byung-Gook

2018-02-01

To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.

Flash drive memory apparatus and method

NASA Technical Reports Server (NTRS)

Hinchey, Michael G. (Inventor)

2010-01-01

A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass storage controller, and at least one other interface for a memory device, other than a USB interface, the at least one other interface being connected to the USB mass storage controller.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Low-temperature post-deposition annealing investigation for 3D charge trap flash memory by Kelvin probe force microscopy

NASA Astrophysics Data System (ADS)

Huo, Zongliang; Jin, Lei; Han, Yulong; Li, Xinkai; Ye, Tianchun; Liu, Ming

2015-01-01

The influence of post-deposition annealing (PDA) temperature condition on charge distribution behavior of HfO2 thin films was systematically investigated by various-temperature Kelvin probe force microscopy technology. Contact potential difference profiles demonstrated that charge storage capability shrinks with decreasing annealing temperature from 1,000 to 500 °C and lower. Compared to 1,000 °C PDA, it was found that 500 °C PDA causes deeper effective trap energy level, suppresses lateral charge spreading, and improves the retention characteristics. It is concluded that low-temperature PDA can be adopted in 3D HfO2-based charge trap flash memory to improve the thermal treatment compatibility of the bottom peripheral logic and upper memory arrays.

Numerical model of a single nanocrystal devoted to the study of disordered nanocrystal floating gates of new flash memories

NASA Astrophysics Data System (ADS)

Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie

2011-05-01

The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.

Checkpoint-Restart in User Space

DOE Office of Scientific and Technical Information (OSTI.GOV)

CRUISE implements a user-space file system that stores data in main memory and transparently spills over to other storage, like local flash memory or the parallel file system, as needed. CRUISE also exposes file contents fo remote direct memory access, allowing external tools to copy files to the parallel file system in the background with reduced CPU interruption.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigation

NASA Technical Reports Server (NTRS)

Swift, G.

2002-01-01

JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.

Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo

2017-08-01

The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device.

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment.

PubMed

Huang, Chi-Hsien; Lin, Chih-Ting; Wang, Jer-Chyi; Chou, Chien; Ye, Yu-Ren; Cheng, Bing-Ming; Lai, Chao-Sung

2012-11-30

A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

Microdose Induced Data Loss on Floating Gate Memories

NASA Technical Reports Server (NTRS)

Guertin, Steven M.; Nguyen, Duc M.; Patterson, Jeffrey D.

2006-01-01

Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

High Performance Data Transfer for Distributed Data Intensive Sciences

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Chin; Cottrell, R 'Les' A.; Hanushevsky, Andrew B.

We report on the development of ZX software providing high performance data transfer and encryption. The design scales in: computation power, network interfaces, and IOPS while carefully balancing the available resources. Two U.S. patent-pending algorithms help tackle data sets containing lots of small files and very large files, and provide insensitivity to network latency. It has a cluster-oriented architecture, using peer-to-peer technologies to ease deployment, operation, usage, and resource discovery. Its unique optimizations enable effective use of flash memory. Using a pair of existing data transfer nodes at SLAC and NERSC, we compared its performance to that of bbcp andmore » GridFTP and determined that they were comparable. With a proof of concept created using two four-node clusters with multiple distributed multi-core CPUs, network interfaces and flash memory, we achieved 155Gbps memory-to-memory over a 2x100Gbps link aggregated channel and 70Gbps file-to-file with encryption over a 5000 mile 100Gbps link.« less

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Modeling of SONOS Memory Cell Erase Cycle

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

2011-01-01

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Non-Volatile Memory Technology Symposium 2001: Proceedings

NASA Technical Reports Server (NTRS)

Aranki, Nazeeh; Daud, Taher; Strauss, Karl

2001-01-01

This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory

NASA Astrophysics Data System (ADS)

Yu, Hyung Suk

Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference. Many new memory technologies are being considered as alternatives to flash memory in an effort to overcome these limitations. Ferroelectric Field-Effect Transistor (FeFET) is one of the main emerging candidates because of its structural similarity to conventional FETs and fast switching speed. Nevertheless, the performance of FeFETs have not been systematically compared and analyzed against other competing technologies. In this work, we first benchmark the intrinsic performance of FeFETs and other memories by simulations in order to identify the strengths and weaknesses of FeFETs. To simulate realistic memory applications, we compare memories on an array structure. For the comparisons, we construct an accurate delay model and verify it by benchmarking against exact HSPICE simulations. Second, we propose an accurate model for FeFET memory window since the existing model has limitations. The existing model assumes symmetric operation voltages but it is not valid for the practical asymmetric operation voltages. In this modeling, we consider practical operation voltages and device dimensions. Also, we investigate realistic changes of memory window over time and retention time of FeFETs. Last, to improve memory window and subthreshold swing, we suggest nonplanar junctionless structures for FeFETs. Using the suggested structures, we study the dimensional dependences of crucial parameters like memory window and subthreshold swing and also analyze key interference mechanisms.

FLASH Interface; a GUI for managing runtime parameters in FLASH simulations

NASA Astrophysics Data System (ADS)

Walker, Christopher; Tzeferacos, Petros; Weide, Klaus; Lamb, Donald; Flocke, Norbert; Feister, Scott

2017-10-01

We present FLASH Interface, a novel graphical user interface (GUI) for managing runtime parameters in simulations performed with the FLASH code. FLASH Interface supports full text search of available parameters; provides descriptions of each parameter's role and function; allows for the filtering of parameters based on categories; performs input validation; and maintains all comments and non-parameter information already present in existing parameter files. The GUI can be used to edit existing parameter files or generate new ones. FLASH Interface is open source and was implemented with the Electron framework, making it available on Mac OSX, Windows, and Linux operating systems. The new interface lowers the entry barrier for new FLASH users and provides an easy-to-use tool for experienced FLASH simulators. U.S. Department of Energy (DOE), NNSA ASC/Alliances Center for Astrophysical Thermonuclear Flashes, U.S. DOE NNSA ASC through the Argonne Institute for Computing in Science, U.S. National Science Foundation.

Sentinel 2 MMFU: The first European Mass Memory System Based on NAND-Flash Storage Technology

NASA Astrophysics Data System (ADS)

Staehle, M.; Cassel, M.; Lonsdorfer, U.; Gliem, F.; Walter, D.; Fichna, T.

2011-08-01

Sentinel-2 is the multispectral optical mission of the EU-ESA GMES (Global Monitoring for Environment and Security) program, currently under development by Astrium-GmbH in Friedrichshafen (Germany) for a launch in 2013. The mission features a 490 Mbit/s optical sensor operating at high duty cycles, requiring in turn a large 2.4 Tbit on-board storage capacity.The required storage capacity motivated the selection of the NAND-Flash technology which was already secured by a lengthy period (2004-2009) of detailed testing, analysis and qualification by Astrium GmbH, IDA and ESTEC. The mass memory system is currently being realized by Astrium GmbH.

A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers

NASA Astrophysics Data System (ADS)

Kajiyama, Shinya; Fujito, Masamichi; Kasai, Hideo; Mizuno, Makoto; Yamaguchi, Takanori; Shinagawa, Yutaka

A novel 300MHz embedded flash memory for dual-core microcontrollers with a shared ROM architecture is proposed. One of its features is a three-stage pipeline read operation, which enables reduced access pitch and therefore reduces performance penalty due to conflict of shared ROM accesses. Another feature is a highly sensitive sense amplifier that achieves efficient pipeline operation with two-cycle latency one-cycle pitch as a result of a shortened sense time of 0.63ns. The combination of the pipeline architecture and proposed sense amplifiers significantly reduces access-conflict penalties with shared ROM and enhances performance of 32-bit RISC dual-core microcontrollers by 30%.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

The flash memory battle: How low can we go?

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Wismans, Onno; Grim, Kees; Finders, Jo; Dusa, Mircea; Birkner, Robert; Richter, Rigo; Scherübl, Thomas

2008-03-01

With the introduction of the TWINSCAN XT:1900Gi the limit of the water based hyper-NA immersion lithography has been reached in terms of resolution. With a numerical aperture of 1.35 a single expose resolution of 36.5nm half pitch has been demonstrated. However the practical resolution limit in production will be closer to 40nm half pitch, without having to go to double patterning alike strategies. In the relentless Flash memory market the performance of the exposure tool is stretched to the limit for a competitive advantage and cost-effective product. In this paper we will present the results of an experimental study of the resolution limit of the NAND-Flash Memory Gate layer for a production-worthy process on the TWINSCAN XT:1900Gi. The entire gate layer will be qualified in terms of full wafer CD uniformity, aberration sensitivities for the different wordlines and feature-center placement errors for 38, 39, 40 and 43nm half pitch design rule. In this study we will also compare the performance of a binary intensity mask to a 6% attenuated phase shift mask and look at strategies to maximize Depth of Focus, and to desensitize the gate layer for lens aberrations and placement errors. The mask is one of the dominant contributors to the CD uniformity budget of the flash gate layer. Therefore the wafer measurements are compared to aerial image measurements of the mask using AIMSTM 45-193i to separate the mask contribution from the scanner contribution to the final imaging performance.

A light writable microfluidic "flash memory": optically addressed actuator array with latched operation for microfluidic applications.

PubMed

Hua, Zhishan; Pal, Rohit; Srivannavit, Onnop; Burns, Mark A; Gulari, Erdogan

2008-03-01

This paper presents a novel optically addressed microactuator array (microfluidic "flash memory") with latched operation. Analogous to the address-data bus mediated memory address protocol in electronics, the microactuator array consists of individual phase-change based actuators addressed by localized heating through focused light patterns (address bus), which can be provided by a modified projector or high power laser pointer. A common pressure manifold (data bus) for the entire array is used to generate large deflections of the phase change actuators in the molten phase. The use of phase change material as the working media enables latched operation of the actuator array. After the initial light "writing" during which the phase is temporarily changed to molten, the actuated status is self-maintained by the solid phase of the actuator without power and pressure inputs. The microfluidic flash memory can be re-configured by a new light illumination pattern and common pressure signal. The proposed approach can achieve actuation of arbitrary units in a large-scale array without the need for complex external equipment such as solenoid valves and electrical modules, which leads to significantly simplified system implementation and compact system size. The proposed work therefore provides a flexible, energy-efficient, and low cost multiplexing solution for microfluidic applications based on physical displacements. As an example, the use of the latched microactuator array as "normally closed" or "normally open" microvalves is demonstrated. The phase-change wax is fully encapsulated and thus immune from contamination issues in fluidic environments.

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

NASA Technical Reports Server (NTRS)

Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

Hot Flashes and Quality of Life Among Breast Cancer Patients

DTIC Science & Technology

2006-08-01

hot flashes, 40.7% report at baseline, having used HRT and 26.8% used exercise to control hot flashes. The 12-month data indicates that 26.5% of the...entire sample who are experiencing hot flashes, tried or are using some form of HRT to control hot flashes with exercise still the most frequently...used approach to manage hot flashes with 44.2% of sample currently exercising . 15. SUBJECT TERMS Breast Cancer, Hot Flashes, Quality of Life

Flashes and floaters - a practical approach to assessment and management.

PubMed

Kahawita, Shyalle; Simon, Sumu; Gilhotra, Jolly

2014-04-01

Flashes and floaters are common ophthalmic issues for which patients may initially present to their general practitioner. It may be a sign of benign, 
age-related changes of the vitreous or more serious retinal detachment. This article provides a guide to the assessment and management of a patient presenting with flashes and floaters. Although most patients presenting with flashes and floaters have benign 
age-related changes, they must be referred to an ophthalmologist to rule out sight-threatening conditions. Key examination features include the nature of the flashes and floaters, whether one or both eyes are affected and changes in visual acuity or visual field.

Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory

NASA Astrophysics Data System (ADS)

Choe, Byeong-In; Park, Byung-Gook; Lee, Jong-Ho

2013-06-01

The program disturbance characteristic in the three-dimensional (3D) stack NAND flash was analyzed for the first time in terms of string select line (SSL) threshold voltage (Vth) and p-type body doping profile. From the edge word line (W/L) program disturbance, we can observe the boosted channel potential loss as a function of SSL Vth and body doping profile for SSL device. According to simulation work, a high Vth of the SSL device is required to suppress channel leakage during programming. When the body doping of the SSL device is high in the channel, there is a large band bending near the gate edge of the SSL adjacent to the edge W/L cell of boosted cell strings, which generates significantly electron-hole pairs. The generated electrons decreases the boosted channel potential, resulting in increase of program disturbance of the inhibit strings. Through optimization of the body doping profile of the SSL device, both channel leakage and the program disturbance are successfully suppressed for a highly reliable 3D stack NAND flash memory cell operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP)more » technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup −2} eV{sup −1} to 3.66 × 10{sup 13} cm{sup −2} eV{sup −1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.« less

Phonological and Sensory Short-Term Memory Are Correlates and Both Affected in Developmental Dyslexia

ERIC Educational Resources Information Center

Laasonen, Marja; Virsu, Veijo; Oinonen, Suvi; Sandbacka, Mirja; Salakari, Anita; Service, Elisabet

2012-01-01

We investigated whether poor short-term memory (STM) in developmental dyslexia affects the processing of sensory stimulus sequences in addition to phonological material. STM for brief binary non-verbal stimuli (light flashes, tone bursts, finger touches, and their crossmodal combinations) was studied in 20 Finnish adults with dyslexia and 24…

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Memory Decline in Peri- and Post-menopausal Women: The Potential of Mind–Body Medicine to Improve Cognitive Performance

PubMed Central

Sliwinski, Jim R; Johnson, Aimee K; Elkins, Gary R

2014-01-01

Cognitive decline is a frequent complaint during the menopause transition and among post-menopausal women. Changes in memory correspond with diminished estrogen production. Further, many peri- and post-menopausal women report sleep concerns, depression, and hot flashes, and these factors may contribute to cognitive decline. Hormone therapy can increase estrogen but is contraindicated for many women. Mind–body medicine has been shown to have beneficial effects on sleep, mood, and hot flashes, among post-menopausal women. Further, mind–body medicine holds potential in addressing symptoms of cognitive decline post-menopause. This study proposes an initial framework for how mind–body interventions may improve cognitive performance and inform future research seeking to identify the common and specific factors associated with mind–body medicine for addressing memory decline in peri- and post-menopausal women. It is our hope that this article will eventually lead to a more holistic and integrative approach to the treatment of cognitive deficits in peri- and post-menopausal women. PMID:25125972

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Behavioral weight loss for the management of menopausal hot flashes: a pilot study.

PubMed

Thurston, Rebecca C; Ewing, Linda J; Low, Carissa A; Christie, Aimee J; Levine, Michele D

2015-01-01

Although adiposity has been considered to be protective against hot flashes, newer data suggest positive relationships between hot flashes and adiposity. No studies have been specifically designed to test whether weight loss reduces hot flashes. This pilot study aimed to evaluate the feasibility, acceptability, and initial efficacy of behavioral weight loss in reducing hot flashes. Forty overweight or obese women with hot flashes (≥ 4 hot flashes/d) were randomized to either behavioral weight loss intervention or wait-list control. Hot flashes were assessed before and after intervention via physiologic monitoring, diary, and questionnaire. Comparisons of changes in hot flashes and anthropometrics between conditions were performed via Wilcoxon tests. Study retention (83%) and intervention satisfaction (93.8%) were high. Most women (74.1%) reported that hot flash reduction was a major motivator for losing weight. Women randomized to the weight loss intervention lost more weight (-8.86 kg) than did women randomized to control (+0.23 kg; P < 0.0001). Women randomized to weight loss also showed greater reductions in questionnaire-reported hot flashes (2-wk hot flashes, -63.0) than did women in the control group (-28.0; P = 0.03)-a difference not demonstrated in other hot flash measures. Reductions in weight and hot flashes were significantly correlated (eg, r = 0.47, P = 0.006). This pilot study shows a behavioral weight loss program that is feasible, acceptable, and effective in producing weight loss among overweight or obese women with hot flashes. Findings indicate the importance of a larger study designed to test behavioral weight loss for hot flash reduction. Hot flash management could motivate women to engage in this health-promoting behavior.

CoNNeCT Baseband Processor Module Boot Code SoftWare (BCSW)

NASA Technical Reports Server (NTRS)

Yamamoto, Clifford K.; Orozco, David S.; Byrne, D. J.; Allen, Steven J.; Sahasrabudhe, Adit; Lang, Minh

2012-01-01

This software provides essential startup and initialization routines for the CoNNeCT baseband processor module (BPM) hardware upon power-up. A command and data handling (C&DH) interface is provided via 1553 and diagnostic serial interfaces to invoke operational, reconfiguration, and test commands within the code. The BCSW has features unique to the hardware it is responsible for managing. In this case, the CoNNeCT BPM is configured with an updated CPU (Atmel AT697 SPARC processor) and a unique set of memory and I/O peripherals that require customized software to operate. These features include configuration of new AT697 registers, interfacing to a new HouseKeeper with a flash controller interface, a new dual Xilinx configuration/scrub interface, and an updated 1553 remote terminal (RT) core. The BCSW is intended to provide a "safe" mode for the BPM when initially powered on or when an unexpected trap occurs, causing the processor to reset. The BCSW allows the 1553 bus controller in the spacecraft or payload controller to operate the BPM over 1553 to upload code; upload Xilinx bit files; perform rudimentary tests; read, write, and copy the non-volatile flash memory; and configure the Xilinx interface. Commands also exist over 1553 to cause the CPU to jump or call a specified address to begin execution of user-supplied code. This may be in the form of a real-time operating system, test routine, or specific application code to run on the BPM.

Behavioral Weight Loss for the Management of Menopausal Hot Flashes: A Pilot Study

PubMed Central

Thurston, Rebecca C.; Ewing, Linda J.; Low, Carissa A.; Christie, Aimee J.; Levine, Michele D.

2014-01-01

Objective Although adiposity has been considered protective against hot flashes, newer data suggest positive relations between flashes and adiposity. No studies have been specifically designed to test whether weight loss reduces hot flashes. This pilot study aimed to evaluate the feasibility, acceptability, and initial efficacy of behavioral weight loss to reduce hot flashes. Methods Forty overweight/obese women with hot flashes (≥4/day) were randomized to a behavioral weight loss intervention or to wait list control. Hot flashes were assessed pre- and post-intervention via physiologic monitor, diary, and questionnaire. Comparisons of changes in hot flashes and anthropometrics between conditions were tested via Wilcoxon tests. Results Study retention (83%) and intervention satisfaction (93.8%) were high. Most women (74.1%) reported that hot flash reduction was a main motivator to lose weight. Women randomized to the weight loss intervention lost more weight (-8.86 kg) than did women randomized to control (+0.23 kg, p<.0001). Women randomized to weight loss also showed greater reductions in questionnaire-reported hot flashes (2-week hot flashes: −63.0) than did women in the control (−28.0, p=.03), a difference not demonstrated in other hot flash measures. Reductions in weight and hot flashes were significantly correlated (e.g., r=.47, p=.006). Conclusions This pilot study showed a behavioral weight loss program to be feasible, acceptable, and effective in producing weight loss among overweight/obese women with hot flashes. Findings indicate the importance of a larger study designed to test behavioral weight loss for hot flash reduction. Hot flash management could motivate women to engage in this health-promoting behavior. PMID:24977456

77 FR 74222 - Certain Dynamic Random Access Memory and NAND Flash Memory Devices and Products Containing Same...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-13

..., California; Kingston Technology Co., Inc. of Fountain Valley, California; Logitek International S.A. (``LISA...: Clint Gerdine, Esq., Office of the General Counsel, U.S. International Trade Commission, 500 E Street SW....m. to 5:15 p.m.) in the Office of the Secretary, U.S. International Trade Commission, 500 E Street...

Management of menopause-associated vasomotor symptoms: Current treatment options, challenges and future directions

PubMed Central

Pachman, Deirdre R; Jones, Jason M; Loprinzi, Charles L

2010-01-01

Hot flashes are one of the most common and distressing symptoms associated with menopause, occurring in more than 75% of postmenopausal women. They are especially problematic in breast cancer patients since some breast cancer therapies can induce hot flashes. For mild hot flashes, it is proposed that behavioral modifications are the first step in management. Hormonal therapies, including estrogens and progestogens, are the most well known effective agents in relieving hot flashes; however, the safety of these agents is controversial. There is an increasing amount of literature on nonhormonal agents for the treatment of hot flashes. The most promising data regard newer antidepressant agents such as venlafaxine, which reduces hot flashes by about 60%. Gabapentin is another nonhormonal agent that is effective in reducing hot flashes. While many complimentary therapies, including phytoestrogens, black cohosh, and dehydroepiandrosterone, have been explored for the treatment of hot flashes; none can be recommended at this time. Furthermore, there is a lack of strong evidence to support exercise, yoga, or relaxation for the treatment of hot flashes. Paced respirations and hypnosis appear to be promising enough to warrant further investigation. Another promising nonpharmacological therapy, currently under investigation, involves a stellate ganglion block. PMID:21072305

Investigating of Memory - Colours of Intellectually Disabled Children and Virtual Game Addict Students

NASA Astrophysics Data System (ADS)

Sik Lányi, Cecília

We describe an investigation of memory colours. For this investigation Flash test software was developed. 75 observers used this test software in 4 groups: average elementary school children (aged: 8-9 years), intellectually disabled children (age: 9-15), virtual game addict university students (average age: 20) and university students who play with VR games rarely or never (average age: 20). In this pilot test we investigated the difference of memory colours of these 4 groups.

Aging changes in the female reproductive system

MedlinePlus

... Other common changes include: Menopause symptoms such as hot flashes, moodiness, headaches, and trouble sleeping Problems with short-term memory Decrease in breast tissue Lower sex drive (libido) and sexual response Increased risk of ...

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Radiation Test Challenges for Scaled Commerical Memories

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

2007-01-01

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

MRAM Technology Status

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2013-01-01

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Impact of Recent Hardware and Software Trends on High Performance Transaction Processing and Analytics

NASA Astrophysics Data System (ADS)

Mohan, C.

In this paper, I survey briefly some of the recent and emerging trends in hardware and software features which impact high performance transaction processing and data analytics applications. These features include multicore processor chips, ultra large main memories, flash storage, storage class memories, database appliances, field programmable gate arrays, transactional memory, key-value stores, and cloud computing. While some applications, e.g., Web 2.0 ones, were initially built without traditional transaction processing functionality in mind, slowly system architects and designers are beginning to address such previously ignored issues. The availability, analytics and response time requirements of these applications were initially given more importance than ACID transaction semantics and resource consumption characteristics. A project at IBM Almaden is studying the implications of phase change memory on transaction processing, in the context of a key-value store. Bitemporal data management has also become an important requirement, especially for financial applications. Power consumption and heat dissipation properties are also major considerations in the emergence of modern software and hardware architectural features. Considerations relating to ease of configuration, installation, maintenance and monitoring, and improvement of total cost of ownership have resulted in database appliances becoming very popular. The MapReduce paradigm is now quite popular for large scale data analysis, in spite of the major inefficiencies associated with it.

Active Flash: Performance-Energy Tradeoffs for Out-of-Core Processing on Non-Volatile Memory Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S

2012-01-01

In this abstract, we study the performance and energy tradeoffs involved in migrating data analysis into the flash device, a process we refer to as Active Flash. The Active Flash paradigm is similar to 'active disks', which has received considerable attention. Active Flash allows us to move processing closer to data, thereby minimizing data movement costs and reducing power consumption. It enables true out-of-core computation. The conventional definition of out-of-core solvers refers to an approach to process data that is too large to fit in the main memory and, consequently, requires access to disk. However, in Active Flash, processing outsidemore » the host CPU literally frees the core and achieves real 'out-of-core' analysis. Moving analysis to data has long been desirable, not just at this level, but at all levels of the system hierarchy. However, this requires a detailed study on the tradeoffs involved in achieving analysis turnaround under an acceptable energy envelope. To this end, we first need to evaluate if there is enough computing power on the flash device to warrant such an exploration. Flash processors require decent computing power to run the internal logic pertaining to the Flash Translation Layer (FTL), which is responsible for operations such as address translation, garbage collection (GC) and wear-leveling. Modern SSDs are composed of multiple packages and several flash chips within a package. The packages are connected using multiple I/O channels to offer high I/O bandwidth. SSD computing power is also expected to be high enough to exploit such inherent internal parallelism within the drive to increase the bandwidth and to handle fast I/O requests. More recently, SSD devices are being equipped with powerful processing units and are even embedded with multicore CPUs (e.g. ARM Cortex-A9 embedded processor is advertised to reach 2GHz frequency and deliver 5000 DMIPS; OCZ RevoDrive X2 SSD has 4 SandForce controllers, each with 780MHz max frequency Tensilica core). Efforts that take advantage of the available computing cycles on the processors on SSDs to run auxiliary tasks other than actual I/O requests are beginning to emerge. Kim et al. investigate database scan operations in the context of processing on the SSDs, and propose dedicated hardware logic to speed up scans. Also, cluster architectures have been explored, which consist of low-power embedded CPUs coupled with small local flash to achieve fast, parallel access to data. Processor utilization on SSD is highly dependent on workloads and, therefore, they can be idle during periods with no I/O accesses. We propose to use the available processing capability on the SSD to run tasks that can be offloaded from the host. This paper makes the following contributions: (1) We have investigated Active Flash and its potential to optimize the total energy cost, including power consumption on the host and the flash device; (2) We have developed analytical models to analyze the performance-energy tradeoffs for Active Flash, by treating the SSD as a blackbox, this is particularly valuable due to the proprietary nature of the SSD internal hardware; and (3) We have enhanced a well-known SSD simulator (from MSR) to implement 'on-the-fly' data compression using Active Flash. Our results provide a window into striking a balance between energy consumption and application performance.« less

82 FR 35991 - Certain Flash Memory Devices and Components Thereof; Notice of Commission Determination Not To...

Federal Register 2010, 2011, 2012, 2013, 2014

2017-08-02

... following respondents: SanDisk LLC of Milpitas, California; Western Digital Corporation of Irvine, California; Western Digital Technologies, Inc. of Milpitas, California; SanDisk Limited of Yokohama, Japan...

Titanium oxide nonvolatile memory device and its application

NASA Astrophysics Data System (ADS)

Wang, Wei

In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be explained by thermal dissolution model, and bipolar switching by local redox reaction model. Since it is generally agreed that the memory switching of TiOx NVM devices is based on conductive filaments, reusability of these conductive filaments becomes an intriguing issue to determine the memory device's endurance. A 1X3 cross-point test structure is built to investigate whether conductive filaments can be reused after RESET. It is found that the conductive filament is destroyed during unipolar switching, while can be reused during bipolar switching. The result is a good indication that bipolar switching should have better endurance than unipolar switching. Finally a novel application of the two-terminal resistive switching NVM devices is demonstrated. To reduce SRAM leakage power, we propose a nonvolatile SRAM cell with two back-up NVM devices. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty in this approach. Only a slight performance penalty is expected.

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

NASA Technical Reports Server (NTRS)

Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

2001-01-01

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

NASA Astrophysics Data System (ADS)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

High performance data transfer

NASA Astrophysics Data System (ADS)

Cottrell, R.; Fang, C.; Hanushevsky, A.; Kreuger, W.; Yang, W.

2017-10-01

The exponentially increasing need for high speed data transfer is driven by big data, and cloud computing together with the needs of data intensive science, High Performance Computing (HPC), defense, the oil and gas industry etc. We report on the Zettar ZX software. This has been developed since 2013 to meet these growing needs by providing high performance data transfer and encryption in a scalable, balanced, easy to deploy and use way while minimizing power and space utilization. In collaboration with several commercial vendors, Proofs of Concept (PoC) consisting of clusters have been put together using off-the- shelf components to test the ZX scalability and ability to balance services using multiple cores, and links. The PoCs are based on SSD flash storage that is managed by a parallel file system. Each cluster occupies 4 rack units. Using the PoCs, between clusters we have achieved almost 200Gbps memory to memory over two 100Gbps links, and 70Gbps parallel file to parallel file with encryption over a 5000 mile 100Gbps link.

External Verification of SCADA System Embedded Controller Firmware

DTIC Science & Technology

2012-03-01

microprocessor and read-only memory (ROM) or flash memory for storing firmware and control logic [5],[8]. A PLC typically has three software levels as shown in...implementing different firmware. Because PLCs are in effect a microprocessor device, an analysis of the current research on embedded devices is important...Electronics Engineers (IEEE) published a 15 best practices guide for firmware control on microprocessors [44]. IEEE suggests that microprocessors

Flashes and Floaters.

PubMed

Sharma, Priya; Sridhar, Jayanth; Mehta, Sonia

2015-09-01

Flashes and floaters are common ocular complaints. Flashes refer to aberrations of light that are seen in a patient's field of gaze. The flashes can be of varying sizes, colors, frequency, and durations, depending on the cause. Floaters are another common visual phenomenon caused by particles or debris in the vitreous gel of the eye that cause shadows and thus visual changes, especially against bright backgrounds and in brightly lit environments. Flashes and floaters can occur individually or together. This article discusses common causes of flashes and floaters to help with the triaging and management of these patients. Copyright © 2015 Elsevier Inc. All rights reserved.

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu

2015-06-24

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. Themore » device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.« less

77 FR 35718 - Certain Universal Serial Bus (“USB”) Portable Storage Devices, Including USB Flash Drives and...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-14

... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are... Sunnyvale, California; Kingston Technology Company, Inc. of Fountain Valley, California; Patriot Memory, LLC...

Total ionizing dose effect in an input/output device for flash memory

NASA Astrophysics Data System (ADS)

Liu, Zhang-Li; Hu, Zhi-Yuan; Zhang, Zheng-Xuan; Shao, Hua; Chen, Ming; Bi, Da-Wei; Ning, Bing-Xu; Zou, Shi-Chang

2011-12-01

Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

A microcomputer-based daily living activity recording system.

PubMed

Matsuoka, Shingo; Yonezawa, Yoshiharu; Maki, Hiromichi; Ogawa, Hidekuni; Hahn, Allen W; Thayer, Julian F; Caldwell, W Morton

2003-01-01

A new daily living activity recording system has been developed for monitoring health conditions and living patterns, such as respiration, posture, activity/rest ratios and general activity level. The system employs a piezoelectric sensor, a dual axis accelerometer, two low-power active filters, a low-power 8-bit single chip microcomputer and a 128 MB compact flash memory. The piezoelectric sensor, whose electrical polarization voltage is produced by mechanical strain, detects body movements. Its high-frequency output components reflect body movements produced by walking and running activities, while the low frequency components are mainly respiratory. The dual axis accelerometer detects, from body X and Y tilt angles, whether the patient is standing, sitting or lying down (prone, supine, left side or right side). The detected respiratory, behavior and posture signals are stored by the compact flash memory. After recording, these data are downloaded to a desktop computer and analyzed.

Mistaking the recent past for the present: false seeing by older adults.

PubMed

Jacoby, Larry L; Rogers, Chad S; Bishara, Anthony J; Shimizu, Yujiro

2012-03-01

Results of three experiments revealed that older, as compared to young, adults are more reliant on context when "seeing" a briefly flashed word that was preceded by a prime. In a congruent condition, the prime was the same word as flashed (e.g., DIRT dirt) whereas in an incongruent condition, the prime differed in a single letter from the word that was flashed (DART dirt). Following their attempt to identify the flashed word, participants were asked to report whether they had "seen" the flashed word or, instead, had responded on some other basis (knowing or guessing). Older adults showed dramatically higher false seeing by reporting the prime on incongruent trials and claiming to have seen it flashed. This was true even though a titration procedure was used to equate the performance of young and older adults on baseline trials which did not provide a biasing context. Results of Experiment 3 related age differences in false seeing to willingness to respond when given the option to withhold responses. Convergence of results with those showing higher false memory and false hearing are interpreted as evidence that older adults are less able to avoid misleading effects of context. That lessened ability may be associated with decline in frontal lobe functioning.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

NASA Astrophysics Data System (ADS)

Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

2014-10-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

Active Flash: Out-of-core Data Analytics on Flash Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S

2012-01-01

Next generation science will increasingly come to rely on the ability to perform efficient, on-the-fly analytics of data generated by high-performance computing (HPC) simulations, modeling complex physical phenomena. Scientific computing workflows are stymied by the traditional chaining of simulation and data analysis, creating multiple rounds of redundant reads and writes to the storage system, which grows in cost with the ever-increasing gap between compute and storage speeds in HPC clusters. Recent HPC acquisitions have introduced compute node-local flash storage as a means to alleviate this I/O bottleneck. We propose a novel approach, Active Flash, to expedite data analysis pipelines bymore » migrating to the location of the data, the flash device itself. We argue that Active Flash has the potential to enable true out-of-core data analytics by freeing up both the compute core and the associated main memory. By performing analysis locally, dependence on limited bandwidth to a central storage system is reduced, while allowing this analysis to proceed in parallel with the main application. In addition, offloading work from the host to the more power-efficient controller reduces peak system power usage, which is already in the megawatt range and poses a major barrier to HPC system scalability. We propose an architecture for Active Flash, explore energy and performance trade-offs in moving computation from host to storage, demonstrate the ability of appropriate embedded controllers to perform data analysis and reduction tasks at speeds sufficient for this application, and present a simulation study of Active Flash scheduling policies. These results show the viability of the Active Flash model, and its capability to potentially have a transformative impact on scientific data analysis.« less

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Low-voltage all-inorganic perovskite quantum dot transistor memory

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Zhang, Yating; Zhang, Heng; Yu, Yu; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Che, Yongli; Jin, Lufan; Li, Yifan; Li, Qingyan; Dai, Haitao; Yang, Junbo; Yao, Jianquan

2018-05-01

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (˜2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.

Non-volatile memory based on the ferroelectric photovoltaic effect

PubMed Central

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Out of sight but not out of mind: the neurophysiology of iconic memory in the superior temporal sulcus.

PubMed

Keysers, C; Xiao, D-K; Foldiak, P; Perrett, D I

2005-05-01

Iconic memory, the short-lasting visual memory of a briefly flashed stimulus, is an important component of most models of visual perception. Here we investigate what physiological mechanisms underlie this capacity by showing rapid serial visual presentation (RSVP) sequences with and without interstimulus gaps to human observers and macaque monkeys. For gaps of up to 93 ms between consecutive images, human observers and neurones in the temporal cortex of macaque monkeys were found to continue processing a stimulus as if it was still present on the screen. The continued firing of neurones in temporal cortex may therefore underlie iconic memory. Based on these findings, a neurophysiological vision of iconic memory is presented.

Regional reconstruction of flash flood history in the Guadarrama range (Central System, Spain).

PubMed

Rodriguez-Morata, C; Ballesteros-Cánovas, J A; Trappmann, D; Beniston, M; Stoffel, M

2016-04-15

Flash floods are a common natural hazard in Mediterranean mountain environments and responsible for serious economic and human disasters. The study of flash flood dynamics and their triggers is a key issue; however, the retrieval of historical data is often limited in mountain regions as a result of short time series and the systematic lack of historical data. In this study, we attempt to overcome data deficiency by supplementing existing records with dendrogeomorphic techniques which were employed in seven mountain streams along the northern slopes of the Guadarrama Mountain range. Here we present results derived from the tree-ring analysis of 117 samples from 63 Pinus sylvestris L. trees injured by flash floods, to complement existing flash flood records covering the last ~200years and comment on their hydro-meteorological triggers. To understand the varying number of reconstructed flash flood events in each of the catchments, we also performed a comparative analysis of geomorphic catchment characteristics, land use evolution and forest management. Furthermore, we discuss the limitations of dendrogeomorphic techniques applied in managed forests. Copyright © 2016 Elsevier B.V. All rights reserved.

Computer Game Play Reduces Intrusive Memories of Experimental Trauma via Reconsolidation-Update Mechanisms.

PubMed

James, Ella L; Bonsall, Michael B; Hoppitt, Laura; Tunbridge, Elizabeth M; Geddes, John R; Milton, Amy L; Holmes, Emily A

2015-08-01

Memory of a traumatic event becomes consolidated within hours. Intrusive memories can then flash back repeatedly into the mind's eye and cause distress. We investigated whether reconsolidation-the process during which memories become malleable when recalled-can be blocked using a cognitive task and whether such an approach can reduce these unbidden intrusions. We predicted that reconsolidation of a reactivated visual memory of experimental trauma could be disrupted by engaging in a visuospatial task that would compete for visual working memory resources. We showed that intrusive memories were virtually abolished by playing the computer game Tetris following a memory-reactivation task 24 hr after initial exposure to experimental trauma. Furthermore, both memory reactivation and playing Tetris were required to reduce subsequent intrusions (Experiment 2), consistent with reconsolidation-update mechanisms. A simple, noninvasive cognitive-task procedure administered after emotional memory has already consolidated (i.e., > 24 hours after exposure to experimental trauma) may prevent the recurrence of intrusive memories of those emotional events. © The Author(s) 2015.

Computer Game Play Reduces Intrusive Memories of Experimental Trauma via Reconsolidation-Update Mechanisms

PubMed Central

James, Ella L.; Bonsall, Michael B.; Hoppitt, Laura; Tunbridge, Elizabeth M.; Geddes, John R.; Milton, Amy L.

2015-01-01

Memory of a traumatic event becomes consolidated within hours. Intrusive memories can then flash back repeatedly into the mind’s eye and cause distress. We investigated whether reconsolidation—the process during which memories become malleable when recalled—can be blocked using a cognitive task and whether such an approach can reduce these unbidden intrusions. We predicted that reconsolidation of a reactivated visual memory of experimental trauma could be disrupted by engaging in a visuospatial task that would compete for visual working memory resources. We showed that intrusive memories were virtually abolished by playing the computer game Tetris following a memory-reactivation task 24 hr after initial exposure to experimental trauma. Furthermore, both memory reactivation and playing Tetris were required to reduce subsequent intrusions (Experiment 2), consistent with reconsolidation-update mechanisms. A simple, noninvasive cognitive-task procedure administered after emotional memory has already consolidated (i.e., > 24 hours after exposure to experimental trauma) may prevent the recurrence of intrusive memories of those emotional events. PMID:26133572

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Non-volatile memory for checkpoint storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.

A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, themore » non-volatile memory is a pluggable flash memory card.« less

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer PEB temperature non-uniformity attributed to wafer warpage is uncorrectable, and the photo-resist profile variation is believed to affect across-wafer etch bias uniformity to some degree.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

NASA Astrophysics Data System (ADS)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Patterning optimization for 55nm design rule DRAM/flash memory using production-ready customized illuminations

NASA Astrophysics Data System (ADS)

Chen, Ting; Van Den Broeke, Doug; Hsu, Stephen; Hsu, Michael; Park, Sangbong; Berger, Gabriel; Coskun, Tamer; de Vocht, Joep; Chen, Fung; Socha, Robert; Park, JungChul; Gronlund, Keith

2005-11-01

Illumination optimization, often combined with optical proximity corrections (OPC) to the mask, is becoming one of the critical components for a production-worthy lithography process for 55nm-node DRAM/Flash memory devices and beyond. At low-k1, e.g. k1<0.31, both resolution and imaging contrast can be severely limited by the current imaging tools while using the standard illumination sources. Illumination optimization is a process where the source shape is varied, in both profile and intensity distribution, to achieve enhancement in the final image contrast as compared to using the non-optimized sources. The optimization can be done efficiently for repetitive patterns such as DRAM/Flash memory cores. However, illumination optimization often produces source shapes that are "free-form" like and they can be too complex to be directly applicable for production and lack the necessary radial and annular symmetries desirable for the diffractive optical element (DOE) based illumination systems in today's leading lithography tools. As a result, post-optimization rendering and verification of the optimized source shape are often necessary to meet the production-ready or manufacturability requirements and ensure optimal performance gains. In this work, we describe our approach to the illumination optimization for k1<0.31 DRAM/Flash memory patterns, using an ASML XT:1400i at NA 0.93, where the all necessary manufacturability requirements are fully accounted for during the optimization. The imaging contrast in the resist is optimized in a reduced solution space constrained by the manufacturability requirements, which include minimum distance between poles, minimum opening pole angles, minimum ring width and minimum source filling factor in the sigma space. For additional performance gains, the intensity within the optimized source can vary in a gray-tone fashion (eight shades used in this work). Although this new optimization approach can sometimes produce closely spaced solutions as gauged by the NILS based metrics, we show that the optimal and production-ready source shape solution can be easily determined by comparing the best solutions to the "free-form" solution and more importantly, by their respective imaging fidelity and process latitude ranking. Imaging fidelity and process latitude simulations are performed to analyze the impact and sensitivity of the manufacturability requirements on pattern specific illumination optimizations using ASML XT:1400i and other latest imaging systems. Mask model based OPC (MOPC) is applied and optimized sequentially to ensure that the CD uniformity requirements are met.

Remotely Powered Reconfigurable Receiver for Extreme Environment Sensing Platforms

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.

2012-01-01

Wireless sensors connected in a local network offer revolutionary exploration capabilities, but the current solutions do not work in extreme environments of low temperatures (200K) and low to moderate radiation levels (<50 krad). These sensors (temperature, radiation, infrared, etc.) would need to operate outside the spacecraft/ lander and be totally independent of power from the spacecraft/lander. Flash memory field-programmable gate arrays (FPGAs) are being used as the main signal processing and protocol generation platform in a new receiver. Flash-based FPGAs have been shown to have at least 100 reduced standby power and 10 reduction operating power when compared to normal SRAM-based FPGA technology.

Portable flash lamp reflectance analyzer system and method

NASA Technical Reports Server (NTRS)

Kalshoven, James Edward (Inventor)

1999-01-01

The system and method allow spectroscopic analysis of vegetation or the like without effects from changing sun and cloud conditions, undesired portions of the area of interest or atmospheric disturbances. The system (1) includes a light source (5) such as a xenon flash lamp, a telescope (7), a spectrometer (9), an analog/digital converter (11), a memory (13), a display (15), and an on-board microprocessor (17) or a port (19) for attachment to a laptop computer. The system is taken to an area of interest in the woods (step 41), the vegetation is illuminated from below (step 43) and data are taken (step 45).

Perceived control and hot flashes in treatment-seeking breast cancer survivors and menopausal women.

PubMed

Carpenter, Janet S; Wu, Jingwei; Burns, Debra S; Yu, Menggang

2012-01-01

Lower perceived control over hot flashes has been linked to fewer coping strategies, more catastrophizing, and greater hot flash severity and distress in midlife women, yet this important concept has not yet been studied in breast cancer survivors. The aim of this study was to explore perceived control over hot flashes and hot flashes in breast cancer survivors compared with midlife women without cancer. Ninety-nine survivors and 138 midlife women completed questionnaires and a prospective, electronic hot flash diary. All data were collected at a baseline assessment before randomization in a behavioral intervention study. Both groups had moderate perceived control over hot flashes. Control was not significantly related to hot flash frequency but was significantly related to hot flash severity, bother, and interference in both groups. A significantly stronger association between control and hot flash interference was found for survivors than for midlife women. Survivors using hot flash treatments perceived less control than did survivors not using hot flash treatments, whereas the opposite was true in midlife women. Findings extend our knowledge of perceived control over hot flashes in both survivors and midlife women. Findings emphasize the importance of continued menopausal symptom assessment and management, support the importance of continuing nursing care even for survivors who are already using hot flash treatment, and suggest that nursing interventions aimed at improving perceived control over hot flashes may be more helpful for survivors than for midlife women.

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Liu, Qi; Long, Shibing; Lv, Hangbing; Liu, Ming

2017-08-01

The attractive usability of quantum phenomena in futuristic devices is possible by using zero-dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random-access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed.

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

PubMed Central

Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

2016-01-01

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

NASA Astrophysics Data System (ADS)

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-01

Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer.

PubMed

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-08

Crystalline ZrTiO 4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF 4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N 2 O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 10 5 program/erase cycles and 81.8% charge retention after 10 4  sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

Noise Attenuation Performance Assessment of the Joint Helmet Mounted Cueing System (JHMCS)

DTIC Science & Technology

2010-08-01

Flash Drive (CFD) memory (Figure 9) and Sound Professionals SP-TFB-2 Miniature Binaural Microphones with the Sound Professionals SP-SPSB-1 Slim-line...flight noise. Sound Professionals binaural microphones were placed to record both internal and external sounds. One microphone was attached to the

Future Development of Dense Ferroelectric Memories for Space Applications

NASA Technical Reports Server (NTRS)

Philpy, Stephen C.; Derbenwick, Gary F.

2001-01-01

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Compact Low Power DPU for Plasma Instrument LINA on the Russian Luna-Glob Lander

NASA Astrophysics Data System (ADS)

Schmidt, Walter; Riihelä, Pekka; Kallio, Esa

2013-04-01

The Swedish Institute for Space Physics in Kiruna is bilding a Lunar Ions and Neutrals Analyzer (LINA) for the Russian Luna-Glob lander mission and its orbiter, to be launched around 2016 [1]. The Finnish Meteorological Institute is responsible for designing and building the central data processing units (DPU) for both instruments. The design details were optimized to serve as demonstrator also for a similar instrument on the Jupiter mission JUICE. To accommodate the originally set short development time and to keep the design between orbiter and Lander as similar as possible, the DPU is built around two re-programmable flash-based FPGAs from Actel. One FPGA contains a public-domain 32-bit processor core identical for both Lander and orbiter. The other FPGA handles all interfaces to the spacecraft system and the detectors, somewhat different for both implementations. Monitoring of analog housekeeping data is implemented as an IP-core from Stellamar inside the interface FPGA, saving mass, volume and especially power while simplifying the radiation protection design. As especially on the Lander the data retention before transfer to the orbiter cannot be guaranteed under all conditions, the DPU includes a Flash-PROM containing several software versions and data storage capability. With the memory management implemented inside the interface FPGA, one of the serial links can also be used as test port to verify the system, load the initial software into the Flash-PROM and to control the detector hardware directly without support by the processor and a ready developed operating system and software. Implementation and performance details will be presented. Reference: [1] http://www.russianspaceweb.com/luna_glob_lander.html.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory

NASA Astrophysics Data System (ADS)

Wang, Chenjie; Huo, Zongliang; Liu, Ziyu; Liu, Yu; Cui, Yanxiang; Wang, Yumei; Li, Fanghua; Liu, Ming

2013-07-01

The effects of interfacial fluorination on the metal/Al2O3/HfO2/SiO2/Si (MAHOS) memory structure have been investigated. By comparing MAHOS memories with and without interfacial fluorination, it was identified that the deterioration of the performance and reliability of MAHOS memories is mainly due to the formation of an interfacial layer that generates excess oxygen vacancies at the interface. Interfacial fluorination suppresses the growth of the interfacial layer, which is confirmed by X-ray photoelectron spectroscopy depth profile analysis, increases enhanced program/erase efficiency, and improves data retention characteristics. Moreover, it was observed that fluorination at the SiO-HfO interface achieves a more effective performance enhancement than that at the HfO-AlO interface.

Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

2011-01-01

NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Because advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

76 FR 25707 - In the Matter of Certain Flash Memory and Products Containing Same; Notice of Commission Decision...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-05-05

... review of the ALJ's determination concerning the ALJ's findings on claim construction, infringement... Commission has also determined to review the ID's construction of the ``extracting'' limitation of claim 8 as... construction of the claim limitation ``accumulatively averaging working conditions of lots previously processed...

Charge injection and discharging of Si nanocrystals and arrays by atomic force microscopy

NASA Technical Reports Server (NTRS)

Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.

2000-01-01

Charge injection and storage in dense arrays of silicon nanocrystals in SiO(sub 2) is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few-or single- electron storage in a small number of nanocrystal elements.

Radiation Hardened Electronics Destined For Severe Nuclear Reactor Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holbert, Keith E.; Clark, Lawrence T.

Post nuclear accident conditions represent a harsh environment for electronics. The full station blackout experience at Fukushima shows the necessity for emergency sensing capabilities in a radiation-enhanced environment. This NEET (Nuclear Energy Enabling Technologies) research project developed radiation hardened by design (RHBD) electronics using commercially available technology that employs commercial off-the-shelf (COTS) devices and present generation circuit fabrication techniques to improve the total ionizing dose (TID) hardness of electronics. Such technology not only has applicability to severe accident conditions but also to facilities throughout the nuclear fuel cycle in which radiation tolerance is required. For example, with TID tolerance tomore » megarads of dose, electronics could be deployed for long-term monitoring, inspection and decontamination missions. The present work has taken a two-pronged approach, specifically, development of both board and application-specific integrated circuit (ASIC) level RHBD techniques. The former path has focused on TID testing of representative microcontroller ICs with embedded flash (eFlash) memory, as well as standalone flash devices that utilize the same fabrication technologies. The standalone flash devices are less complicated, allowing better understanding of the TID response of the crucial circuits. Our TID experiments utilize biased components that are in-situ tested, and in full operation during irradiation. A potential pitfall in the qualification of memory circuits is the lack of rigorous testing of the possible memory states. For this reason, we employ test patterns that include all ones, all zeros, a checkerboard of zeros and ones, an inverse checkerboard, and random data. With experimental evidence of improved radiation response for unbiased versus biased conditions, a demonstration-level board using the COTS devices was constructed. Through a combination of redundancy and power gating, the demonstration board exhibits radiation resilience to over 200 krad. Furthermore, our ASIC microprocessor using RHBD techniques was shown to be fully functional after an exposure of 2.5 Mrad whereas the COTS microcontroller units failed catastrophically at <100 krad. The methods developed in this work can facilitate the long-term viability of radiation-hard robotic systems, thereby avoiding obsolescence issues. As a case in point, the nuclear industry with its low purchasing power does not drive the semiconductor industry strategic plans, and the rapid advancements in electronics technology can leave legacy systems stranded.« less

An Analysis of MARSIS Radar Flash Memory Data from Lunae Planum, Mars: Searching for Subsurface Structures.

NASA Astrophysics Data System (ADS)

Caprarelli, G.; Orosei, R.; Mastrogiuseppe, M.; Cartacci, M.

2017-12-01

Lunae Planum is a Martian plain measuring approximately 1000 km in width and 2000 km in length, centered at coordinates 294°E-11°N. MOLA elevations range from +2500 m to +500 m in the south, gently sloping northward to -500 m. The plain is part of a belt of terrains located between the southern highlands and the northern lowlands, that are transitional in character (e.g., by elevation, age and morphology). These transitional terrains are poorly understood, in part because of their relative lack of major geomorphological features. They record however a very significant part of Mars's geologic history. The most evident features on Lunae Planum's Hesperian surface are regularly spaced, longitudinally striking, wrinkle ridges. These indicate the presence of blind thrust faults cutting through thick stacks of layers of volcanic or sedimentary rocks. The presence of fluidized ejecta craters scattered all over the region suggests also the presence of ice or volatiles in the subsurface. In a preliminary study of Lunae Planum's subsurface we used the Mars Express ground penetrating radar MARSIS dataset [1], in order to detect reflectors that could indicate the presence of fault planes or layering. Standard radargrams however, provided no evidence of changes in value of dielectric constant that could indicate possible geologic discontinuities or stratification of physically diverse materials. We thus started a new investigation based on processing of raw MARSIS data. Here we report on the preliminary results of this study. We searched the MARSIS archive for raw data stored in flash memory. When operating with flash storage, the radar collects 2 frequency bands along-track covering a distance = 100-250 km, depending on the orbiter altitude [2]. We found flash memory data from 24 orbits over the area. We processed the data focusing radar returns in off-nadir directions, to maximize the likelihood of detecting sloping subsurface structures, including those striking parallel to the Mars Express sub-polar orbits. We plan to follow this study by applying a new processor aimed at improving the resolution and signal to noise ratio of the data. [1] Caprarelli et al. (2017), LPSC 48, 1720. [2] Watters et al. (2017), LPSC 48, 1693.

PCM-Based Durable Write Cache for Fast Disk I/O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhuo; Wang, Bin; Carpenter, Patrick

2012-01-01

Flash based solid-state devices (FSSDs) have been adopted within the memory hierarchy to improve the performance of hard disk drive (HDD) based storage system. However, with the fast development of storage-class memories, new storage technologies with better performance and higher write endurance than FSSDs are emerging, e.g., phase-change memory (PCM). Understanding how to leverage these state-of-the-art storage technologies for modern computing systems is important to solve challenging data intensive computing problems. In this paper, we propose to leverage PCM for a hybrid PCM-HDD storage architecture. We identify the limitations of traditional LRU caching algorithms for PCM-based caches, and develop amore » novel hash-based write caching scheme called HALO to improve random write performance of hard disks. To address the limited durability of PCM devices and solve the degraded spatial locality in traditional wear-leveling techniques, we further propose novel PCM management algorithms that provide effective wear-leveling while maximizing access parallelism. We have evaluated this PCM-based hybrid storage architecture using applications with a diverse set of I/O access patterns. Our experimental results demonstrate that the HALO caching scheme leads to an average reduction of 36.8% in execution time compared to the LRU caching scheme, and that the SFC wear leveling extends the lifetime of PCM by a factor of 21.6.« less

FLASH Technology: Full-Scale Hospital Waste Water Treatments Adopted in Aceh

NASA Astrophysics Data System (ADS)

Rame; Tridecima, Adeodata; Pranoto, Hadi; Moesliem; Miftahuddin

2018-02-01

A Hospital waste water contains a complex mixture of hazardous chemicals and harmful microbes, which can pose a threat to the environment and public health. Some efforts have been carried out in Nangroe Aceh Darussalam (Aceh), Indonesia with the objective of treating hospital waste water effluents on-site before its discharge. Flash technology uses physical and biological pre-treatment, followed by advanced oxidation process based on catalytic ozonation and followed by GAC and PAC filtration. Flash Full-Scale Hospital waste water Treatments in Aceh from different district have been adopted and investigated. Referring to the removal efficiency of macro-pollutants, the collected data demonstrate good removal efficiency of macro-pollutants using Flash technologies. In general, Flash technologies could be considered a solution to the problem of managing hospital waste water.

Investigation of multilayer WS2 flakes as charge trapping stack layers in non-volatile memories

NASA Astrophysics Data System (ADS)

Wang, Hong; Ren, Deliang; Lu, Chao; Yan, Xiaobing

2018-06-01

In this study, the non-volatile flash memory devices utilize tungsten sulfide flakes as the charge trapping stack layers were fabricated. The sandwiched structure of Pd/ZHO/WS2/ZHO/WS2/SiO2/Si manifests a memory window of 2.26 V and a high density of trapped charges 4.88 × 1012/cm2 under a ±5 V gate sweeping voltage. Moreover, the data retention results of as-fabricated non-volatile memories demonstrate that the high and low capacitance states are enhanced by 3.81% and 3.11%, respectively, after a measurement duration of 1.20 × 104 s. These remarkable achievements are probably attributed to the defects and band gap of WS2 flakes. Besides, the proposed memory fabrication is not only compatible with CMOS manufacturing processes but also gets rid of the high-temperature annealing process. Overall, this proposed non-volatile memory is highly attractive for low voltage, long data retention applications.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

NASA Astrophysics Data System (ADS)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Optimization of a PCRAM Chip for high-speed read and highly reliable reset operations

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Chen, Houpeng; Li, Xi; Wang, Qian; Fan, Xi; Hu, Jiajun; Lei, Yu; Zhang, Qi; Tian, Zhen; Song, Zhitang

2016-10-01

The widely used traditional Flash memory suffers from its performance limits such as its serious crosstalk problems, and increasing complexity of floating gate scaling. Phase change random access memory (PCRAM) becomes one of the most potential nonvolatile memories among the new memory techniques. In this paper, a 1M-bit PCRAM chip is designed based on the SMIC 40nm CMOS technology. Focusing on the read and write performance, two new circuits with high-speed read operation and highly reliable reset operation are proposed. The high-speed read circuit effectively reduces the reading time from 74ns to 40ns. The double-mode reset circuit improves the chip yield. This 1M-bit PCRAM chip has been simulated on cadence. After layout design is completed, the chip will be taped out for post-test.

Evaluation Data of a High Temperature COTS Flash Memory Module (TI SM28VLT32) for Use in Geothermal Electronics Packages

DOE Data Explorer

Cashion, Avery

2014-08-29

The accompanying raw data is composslection. Each file is 3 columns and tab-delimited with the first column being the data address, the second column being the first byte of the data, and the third column being the second byte of the data.

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

NASA Astrophysics Data System (ADS)

Hou, Zhao-Zhao; Wang, Gui-Lei; Yao, Jia-Xin; Zhang, Qing-Zhu; Yin, Hua-Xiang

2018-05-01

Not Available Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.

Night-day-night sleep-wakefulness monitoring by ambulatory integrated circuit memories.

PubMed

Yamamoto, M; Nakao, M; Katayama, N; Waku, M; Suzuki, K; Irokawa, K; Abe, M; Ueno, T

1999-04-01

A medium-sized portable digital recorder with fully integrated circuit (IC) memories for sleep monitoring has been developed. It has five amplifiers for EEG, EMG, EOG, ECG, and a signal of body acceleration or respiration sound, four event markers, an 8 ch A/D converter, a digital signal processor (DSP), 192 Mbytes IC flash memories, and batteries. The whole system weighs 1200 g including batteries and is put into a small bag worn on the subject's waist or carried in their hand. The sampling rate for each input channel is programmable through the DSP. This apparatus is valuable for continuously monitoring the states of sleep-wakefulness over 24 h, making a night-day-night recording possible in a hospital, home, or car.

The role of spatial selective attention in working memory for locations: evidence from event-related potentials.

PubMed

Awh, E; Anllo-Vento, L; Hillyard, S A

2000-09-01

We investigated the hypothesis that the covert focusing of spatial attention mediates the on-line maintenance of location information in spatial working memory. During the delay period of a spatial working-memory task, behaviorally irrelevant probe stimuli were flashed at both memorized and nonmemorized locations. Multichannel recordings of event-related potentials (ERPs) were used to assess visual processing of the probes at the different locations. Consistent with the hypothesis of attention-based rehearsal, early ERP components were enlarged in response to probes that appeared at memorized locations. These visual modulations were similar in latency and topography to those observed after explicit manipulations of spatial selective attention in a parallel experimental condition that employed an identical stimulus display.

Individual differences in working memory capacity predict visual attention allocation.

PubMed

Bleckley, M Kathryn; Durso, Francis T; Crutchfield, Jerry M; Engle, Randall W; Khanna, Maya M

2003-12-01

To the extent that individual differences in working memory capacity (WMC) reflect differences in attention (Baddeley, 1993; Engle, Kane, & Tuholski, 1999), differences in WMC should predict performance on visual attention tasks. Individuals who scored in the upper and lower quartiles on the OSPAN working memory test performed a modification of Egly and Homa's (1984) selective attention task. In this task, the participants identified a central letter and localized a displaced letter flashed somewhere on one of three concentric rings. When the displaced letter occurred closer to fixation than the cue implied, high-WMC, but not low-WMC, individuals showed a cost in the letter localization task. This suggests that low-WMC participants allocated attention as a spotlight, whereas those with high WMC showed flexible allocation.

Novel approach for low-cost muzzle flash detection system

NASA Astrophysics Data System (ADS)

Voskoboinik, Asher

2008-04-01

A low-cost muzzle flash detection based on CMOS sensor technology is proposed. This low-cost technology makes it possible to detect various transient events with characteristic times between dozens of microseconds up to dozens of milliseconds while sophisticated algorithms successfully separate them from false alarms by utilizing differences in geometrical characteristics and/or temporal signatures. The proposed system consists of off-the-shelf smart CMOS cameras with built-in signal and image processing capabilities for pre-processing together with allocated memory for storing a buffer of images for further post-processing. Such a sensor does not require sending giant amounts of raw data to a real-time processing unit but provides all calculations in-situ where processing results are the output of the sensor. This patented CMOS muzzle flash detection concept exhibits high-performance detection capability with very low false-alarm rates. It was found that most false-alarms due to sun glints are from sources at distances of 500-700 meters from the sensor and can be distinguished by time examination techniques from muzzle flash signals. This will enable to eliminate up to 80% of falsealarms due to sun specular reflections in the battle field. Additional effort to distinguish sun glints from suspected muzzle flash signal is made by optimization of the spectral band in Near-IR region. The proposed system can be used for muzzle detection of small arms, missiles and rockets and other military applications.

NAFFS: network attached flash file system for cloud storage on portable consumer electronics

NASA Astrophysics Data System (ADS)

Han, Lin; Huang, Hao; Xie, Changsheng

Cloud storage technology has become a research hotspot in recent years, while the existing cloud storage services are mainly designed for data storage needs with stable high speed Internet connection. Mobile Internet connections are often unstable and the speed is relatively low. These native features of mobile Internet limit the use of cloud storage in portable consumer electronics. The Network Attached Flash File System (NAFFS) presented the idea of taking the portable device built-in NAND flash memory as the front-end cache of virtualized cloud storage device. Modern portable devices with Internet connection have built-in more than 1GB NAND Flash, which is quite enough for daily data storage. The data transfer rate of NAND flash device is much higher than mobile Internet connections[1], and its non-volatile feature makes it very suitable as the cache device of Internet cloud storage on portable device, which often have unstable power supply and intermittent Internet connection. In the present work, NAFFS is evaluated with several benchmarks, and its performance is compared with traditional network attached file systems, such as NFS. Our evaluation results indicate that the NAFFS achieves an average accessing speed of 3.38MB/s, which is about 3 times faster than directly accessing cloud storage by mobile Internet connection， and offers a more stable interface than that of directly using cloud storage API. Unstable Internet connection and sudden power off condition are tolerable, and no data in cache will be lost in such situation.

Configurable test bed design for nanosats to qualify commercial and customized integrated circuits

NASA Astrophysics Data System (ADS)

Guareschi, W.; Azambuja, J.; Kastensmidt, F.; Reis, R.; Durao, O.; Schuch, N.; Dessbesel, G.

The use of small satellites has increased substantially in recent years due to the reduced cost of their development and launch, as well to the flexibility offered by commercial components. The test bed is a platform that allows components to be evaluated and tested in space. It is a flexible platform, which can be adjusted to a wide quantity of components and interfaces. This work proposes the design and implementation of a test bed suitable for test and evaluation of commercial circuits used in nanosatellites. The development of such a platform allows developers to reduce the efforts in the integration of components and therefore speed up the overall system development time. The proposed test bed is a configurable platform implemented using a Field Programmable Gate Array (FPGA) that controls the communication protocols and connections to the devices under test. The Flash-based ProASIC3E FPGA from Microsemi is used as a control system. This adaptive system enables the control of new payloads and softcores for test and validation in space. Thus, the integration can be easily performed through configuration parameters. It is intended for modularity. Each component connected to the test bed can have a specific interface programmed using a hardware description language (HDL). The data of each component is stored in embedded memories. Each component has its own memory space. The size of the allocated memory can be also configured. The data transfer priority can be set and packaging can be added to the logic, when needed. Communication with peripheral devices and with the Onboard Computer (OBC) is done through the pre-implemented protocols, such as I2C (Inter-Integrated Circuit), SPI (Serial Peripheral Interface) and external memory control. In loco primary tests demonstrated the control system's functionality. The commercial ProASIC3E FPGA family is not space-flight qualified, but tests have been made under Total Ionizing Dose (TID) showing its robustness up to 25 kr- ds (Si). When considering proton and heavy ions, flash-based FPGAs provide immunity to configuration loss and low bit-flips susceptibility in flash memory. In this first version of the test bed two components are connected to the controller FPGA: a commercial magnetometer and a hardened test chip. The embedded FPGA implements a Single Event Effects (SEE) hardened microprocessor and few other soft-cores to be used in space. This test bed will be used in the NanoSatC-BR1, the first Brazilian Cubesat scheduled to be launched in mid-2013.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

Transiting Exoplanet Survey Satellite (TESS) Community Observer Program including the Science Enhancement Option Box (SEO Box) - 12 TB On-board Flash Memory for Serendipitous Science

NASA Astrophysics Data System (ADS)

Schingler, Robert; Villasenor, J. N.; Ricker, G. R.; Latham, D. W.; Vanderspek, R. K.; Ennico, K. A.; Lewis, B. S.; Bakos, G.; Brown, T. M.; Burgasser, A. J.; Charbonneau, D.; Clampin, M.; Deming, L. D.; Doty, J. P.; Dunham, E. W.; Elliot, J. L.; Holman, M. J.; Ida, S.; Jenkins, J. M.; Jernigan, J. G.; Kawai, N.; Laughlin, G. P.; Lissauer, J. J.; Martel, F.; Sasselov, D. D.; Seager, S.; Torres, G.; Udry, S.; Winn, J. N.; Worden, S. P.

2010-01-01

The Transiting Exoplanet Survey Satellite (TESS) will perform an all-sky survey in a low-inclination, low-Earth orbit. TESS's 144 GB of raw data collected each orbit will be stacked, cleaned, cut, compressed and downloaded. The Community Observer Program is a Science Enhancement Option (SEO) that takes advantage of the low-radiation environment, technology advances in flash memory, and the vast amount of astronomical data collected by TESS. The Community Observer Program requires the addition of a 12 TB "SEO Box” inside the TESS Bus. The hardware can be built using low-cost Commercial Off-The-Shelf (COTS) components and fits within TESS's margins while accommodating GSFC gold rules. The SEO Box collects and stores a duplicate of the TESS camera data at a "raw” stage ( 4.3 GB/orbit, after stacking and cleaning) and makes them available for on-board processing. The sheer amount of onboard storage provided by the SEO Box allows the stacking and storing of several months of data, allowing the investigator to probe deeper in time prior to a given event. Additionally, with computation power and data in standard formats, investigators can utilize data-mining techniques to investigate serendipitous phenomenon, including pulsating stars, eclipsing binaries, supernovae or other transient phenomena. The Community Observer Program enables ad-hoc teams of citizen scientists to propose, test, refine and rank algorithms for on-board analysis to support serendipitous science. Combining "best practices” of online collaboration, with careful moderation and community management, enables this `crowd sourced’ participatory exploration with a minimal risk and impact on the core TESS Team. This system provides a powerful and independent tool opening a wide range of opportunity for science enhancement and secondary science. Support for this work has been provided by NASA, the Kavli Foundation, Google, and the Smithsonian Institution.

Informing hot flash treatment decisions for breast cancer survivors: a systematic review of randomized trials comparing active interventions.

PubMed

Johns, Claire; Seav, Susan M; Dominick, Sally A; Gorman, Jessica R; Li, Hongying; Natarajan, Loki; Mao, Jun James; Irene Su, H

2016-04-01

Patient-centered decision making about hot flash treatments often incorporates a balance of efficacy and side effects in addition to patient preference. This systematic review examines randomized controlled trials (RCTs) comparing at least two non-hormonal hot flash treatments in breast cancer survivors. In July 2015, PubMed, SCOPUS, CINAHL, Cochrane, and Web of Science databases were searched for RCTs comparing active, non-hormonal hot flash treatments in female breast cancer survivors. Thirteen trials were included after identifying 906 potential studies. Four trials were dose comparison studies of pharmacologic treatments citalopram, venlafaxine, gabapentin, and paroxetine. Hot flash reduction did not differ by tamoxifen or aromatase inhibitor use. Citalopram 10, 20, and 30 mg daily had comparable outcomes. Venlafaxine 75 mg daily improved hot flashes without additional side effects from higher dosing. Gabapentin 900 mg daily improved hot flashes more than 300 mg. Paroxetine 10 mg daily had fewer side effects than 20 mg. Among four trials comparing different pharmacologic treatments, venlafaxine alleviated hot flash symptoms faster than clonidine; participants preferred venlafaxine over gabapentin. Five trials compared pharmacologic to non-pharmacologic treatments. Acupuncture had similar efficacy to venlafaxine and gabapentin but may have longer durability after completing treatment and fewer side effects. We could not perform a pooled meta-analysis because outcomes were not reported in comparable formats. Clinical trial data on non-hormonal hot flash treatments provide comparisons of hot flash efficacy and other patient important outcomes to guide clinical management. Clinicians can use the information to help patients select hot flash interventions.

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

NASA Technical Reports Server (NTRS)

John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

2011-01-01

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

A Public + Private Mashup for Computer Science Education

ERIC Educational Resources Information Center

Wang, Kevin

2013-01-01

Getting called into the boss's office isn't always fun. Memories of trips to the school principal's office flash through one's mind. But the day last year that the author was called in to meet with their division vice president turned out to be a very good day. Executives at his company, Microsoft, had noticed the program he created in his spare…

Experimental Study of Floating-Gate-Type Metal-Oxide-Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku

2012-06-01

The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.

ReHypar: A Recursive Hybrid Chunk Partitioning Method Using NAND-Flash Memory SSD

PubMed Central

Park, Sung-Soon; Lim, Cheol-Su

2014-01-01

Due to the rapid development of flash memory, SSD is considered to be the replacement of HDD in the storage market. Although SSD retains several promising characteristics, such as high random I/O performance and nonvolatility, its high expense per capacity is the main obstacle in replacing HDD in all storage solutions. An alternative is to provide a hybrid structure where a small portion of SSD address space is combined with the much larger HDD address space. In such a structure, maximizing the space utilization of SSD in a cost-effective way is extremely important to generate high I/O performance. We developed ReHypar (recursive hybrid chunk partitioning) that enables improving the space utilization of SSD in the hybrid structure. The first objective of ReHypar is to mitigate the fragmentation overhead of SSD address space, by reusing the remaining free space of I/O units as much as possible. Furthermore, ReHypar allows defining several, logical data sections in SSD address space, with each of those sections being configured with the different I/O unit. We integrated ReHypar with ext2 and ext4 and evaluated it using two public benchmarks including IOzone and Postmark. PMID:24987741

NRAM: a disruptive carbon-nanotube resistance-change memory.

PubMed

Gilmer, D C; Rueckes, T; Cleveland, L

2018-04-03

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

NRAM: a disruptive carbon-nanotube resistance-change memory

NASA Astrophysics Data System (ADS)

Gilmer, D. C.; Rueckes, T.; Cleveland, L.

2018-04-01

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

Light flash phenomena induced by HzE particles

NASA Technical Reports Server (NTRS)

Mcnulty, P. J.; Pease, V. P.

1980-01-01

Astronauts and Apollo and Skylab missions have reported observing a variety of visual phenomena when their eyes are closed and adapted to darkness. These phenomena have been collectively labelled as light flashes. Visual phenomena which are similar in appearance to those observed in space have been demonstrated at the number of accelerator facilities by expressing the eyes of human subjects to beams of various types of radiation. In some laboratory experiments Cerenkov radiation was found to be the basis for the flashes observed while in other experiments Cerenkov radiation could apparently be ruled out. Experiments that differentiate between Cerenkov radiation and other possible mechanisms for inducing visual phenomena was then compared. The phenomena obtained in the presence and absence of Cerenkov radiation were designed and conducted. A new mechanism proposed to explain the visual phenomena observed by Skylab astronauts as they passed through the South Atlantic Anomaly, namely nuclear interactions in and near the sensitive layer of the retina, is covered. Also some studies to search for similar transient effects of space radiation on sensors and microcomputer memories are described.

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

NASA Astrophysics Data System (ADS)

Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

2011-03-01

Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

Acupuncture for the Treatment of Hot Flashes in Patients with Breast Cancer Receiving Antiestrogen Therapy: A Pilot Study in Korean Women

PubMed Central

Jeong, Young Ju; Park, Young Sun; Kwon, Hyo Jung; Shin, Im Hee; Bong, Jin Gu

2013-01-01

Abstract Objectives Antiestrogen therapy can cause vasomotor symptoms similar to those occurring during menopause, including hot flashes. Recent studies suggest that acupuncture is effective in reducing vasomotor symptoms in patients with breast cancer receiving tamoxifen. The purpose of this study was to assess the feasibility and safety of acupuncture for treatment of hot flashes in Korean patients with breast cancer receiving antiestrogen therapy. Design This was a prospective single-arm observational study using before and after measurements. Settings/location The study was located at the East–West Medical Center at Daegu Catholic University Medical Center, Daegu, Korea. Subjects The subjects were 10 patients with breast cancer who were undergoing antiestrogen therapy with tamoxifen or anastrozole and who were suffering from hot flashes. Interventions Acupuncture was administered 3 times a week for 4 consecutive weeks, for 20±5 minutes at each session. Outcome measures The outcome measure was severity of hot flashes assessed by visual analogue scale (VAS) and total hot flash score. Results During treatment, severity of hot flashes was reduced by 70%–95% in all patients. Acupuncture significantly alleviated severity of hot flashes assessed by a visual analogue scale (F=30.261; p<0.001) as well as the total hot flash score (F=21.698; p=0.006). Four (4) weeks after the final treatment, symptoms were not aggravated. Conclusions Acupuncture appeared to provide effective relief from hot flashes among Korean women receiving antiestrogen therapy after surgery for breast cancer, and the effects lasted for at least 1 month after termination of treatment. A randomized controlled prospective study with a larger sample size is required to clarify the role of acupuncture in the management of hot flashes in Korean patients with breast cancer. PMID:23383974

Optometrists' examination and referral practices for patients presenting with flashes and floaters.

PubMed

Alwitry, A; Chen, H; Wigfall, S

2002-05-01

Patients experiencing flashes and floaters commonly present to their optometrist. Some of these patients may have significant pathology, yet there is a great deal of variability with regard to examination technique and referral practice. A questionnaire survey was undertaken to determine the current management of patients presenting to their optometrist with flashes and floaters. All practising community optometrists within Southern Derbyshire received a questionnaire and 74 (56.9%) completed replies were received. Optometrists estimated that an average of 14 patients per month per optometrist presented with symptoms of flashes and/or floaters. Mydriasis was utilised routinely for examination in approximately half of the patients. Mean relative confidence was 2.0 at identifying a vitreous haemorrhage and 6.5 for vitreous pigment (complete confidence = 0, complete lack of confidence = 10). Eight percent of responders were unfamiliar with the clinical sign of vitreous pigment, and 17% identifying this sign did not refer all such patients to the hospital services. Patients presenting to their optometrists with flashes and/or floaters make up a sizeable part of the community optometrist's workload and the management of these patients is highly variable. A large proportion of these patients are examined without mydriasis, even in the presence of various risk factors for retinal detachment. There is a relative lack of confidence amongst optometrists with regards the detection of vitreous pigment and the prognostic implications of this finding. Educational measures such as study days may help the level of understanding and heighten the appreciation of the implications of flashes and floaters and the various clinical signs encountered.

Efficacy of a biobehavioral intervention for hot flashes: a randomized controlled pilot study.

PubMed

Barton, Debra L; Schroeder, Kelliann C Fee; Banerjee, Tanima; Wolf, Sherry; Keith, Timothy Z; Elkins, Gary

2017-07-01

The need for effective nonhormonal treatments for hot flash management without unwanted side effects continues. The primary aim of this pilot study was to evaluate the effect of combining a nonhormonal pharmacologic agent with a behavioral treatment for hot flash reduction. Seventy-one postmenopausal women were randomized to one of four groups: venlafaxine 75 mg + hypnosis (VH) versus venlafaxine 75 mg + sham hypnosis (VSH) versus a placebo pill + hypnosis (PH) versus placebo pill + sham hypnosis (PSH). Women recorded hot flash severity and frequency in a daily diary, in real time. The intrapatient difference in hot flash score (frequency × severity) at 8 weeks was analyzed using a General Estimating Equation model, using VSH as the referent arm, controlling for baseline hot flashes. The active arms including PH or VH were not statistically significantly different than VSH (P = 0.34, P = 0.05, respectively). Women in each active arm reported hot flash reductions of about 50%, with the PSH group reporting a 25% reduction. Women receiving the PSH reported statistically significantly smaller reductions in hot flash score than women in the referent VSH arm (P = 0.001). There were no significant negative side effects during the course of the study. Hypnosis alone reduced hot flashes equal to venlafaxine alone, but the combination of hypnosis and venlafaxine did not reduce hot flashes more than either treatment alone. More research is needed to clarify whether combining hypnosis with a different antidepressant would provide synergistic benefits.

76 FR 2681 - Amended Environmental Impact Statement Filing System Guidance for Implementing 40 CFR 1506.9 and...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-14

...., compact discs (CDs), USB flash drives, or memory cards. Please note that if a Federal agency prepares an... of the NOA in the Federal Register. If a calculated time period would end on a non- working day, the assigned time period will be the next working day (i.e., time periods will not end on weekends or Federal...

Highly Asynchronous VisitOr Queue Graph Toolkit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pearce, R.

2012-10-01

HAVOQGT is a C++ framework that can be used to create highly parallel graph traversal algorithms. The framework stores the graph and algorithmic data structures on external memory that is typically mapped to high performance locally attached NAND FLASH arrays. The framework supports a vertex-centered visitor programming model. The frameworkd has been used to implement breadth first search, connected components, and single source shortest path.

Research and Development of Collaborative Environments for Command and Control

DTIC Science & Technology

2011-05-01

at any state of building. The viewer tool presents the designed model with 360-degree perspective views even after regeneration of the design, which...and it shows the following prompt. GUM > APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED...11 First initialize the microSD card by typing GUM > mmcinit Then erase the old Linux kernel and the root file system on the flash memory

Temporal dynamics of encoding, storage and reallocation of visual working memory

PubMed Central

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2012-01-01

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here we examine the temporal evolution of memory resolution, based on observers’ ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory, and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cueing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event, but was maintained if it indicated an object of particular relevance to the task. These cueing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information. PMID:21911739

Temporal dynamics of encoding, storage, and reallocation of visual working memory.

PubMed

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2011-09-12

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here, we examine the temporal evolution of memory resolution, based on observers' ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cuing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event but was maintained if it indicated an object of particular relevance to the task. These cuing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information.

Damage assessment in Braunsbach 2016: data collection and analysis for an improved understanding of damaging processes during flash floods

NASA Astrophysics Data System (ADS)

Laudan, Jonas; Rözer, Viktor; Sieg, Tobias; Vogel, Kristin; Thieken, Annegret H.

2017-12-01

Flash floods are caused by intense rainfall events and represent an insufficiently understood phenomenon in Germany. As a result of higher precipitation intensities, flash floods might occur more frequently in future. In combination with changing land use patterns and urbanisation, damage mitigation, insurance and risk management in flash-flood-prone regions are becoming increasingly important. However, a better understanding of damage caused by flash floods requires ex post collection of relevant but yet sparsely available information for research. At the end of May 2016, very high and concentrated rainfall intensities led to severe flash floods in several southern German municipalities. The small town of Braunsbach stood as a prime example of the devastating potential of such events. Eight to ten days after the flash flood event, damage assessment and data collection were conducted in Braunsbach by investigating all affected buildings and their surroundings. To record and store the data on site, the open-source software bundle KoBoCollect was used as an efficient and easy way to gather information. Since the damage driving factors of flash floods are expected to differ from those of riverine flooding, a post-hoc data analysis was performed, aiming to identify the influence of flood processes and building attributes on damage grades, which reflect the extent of structural damage. Data analyses include the application of random forest, a random general linear model and multinomial logistic regression as well as the construction of a local impact map to reveal influences on the damage grades. Further, a Spearman's Rho correlation matrix was calculated. The results reveal that the damage driving factors of flash floods differ from those of riverine floods to a certain extent. The exposition of a building in flow direction shows an especially strong correlation with the damage grade and has a high predictive power within the constructed damage models. Additionally, the results suggest that building materials as well as various building aspects, such as the existence of a shop window and the surroundings, might have an effect on the resulting damage. To verify and confirm the outcomes as well as to support future mitigation strategies, risk management and planning, more comprehensive and systematic data collection is necessary.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Fusion Helmet: Electronic Analysis

DTIC Science & Technology

2014-04-01

Table 1: LYR203-101B Board Feature P1 (SEC MODULE) DM648 GPIO PORn Video Ports (2) Bootmode SPI/UART I2C CLKIN MDIO DDR2 128MB/16bit SPI Flash 16...McASP EMAC-SGMII /2 MDIO I2C GPIO DDR2 128MB/16bit JTAG Memory CLKGEN I2C PGoodPGood PORn Pwr LED Power DSP SPI/UART DSP SPI/UARTSPI/UART Video Display

Pigeons' Memory for Number of Events: Effects of Intertrial Interval and Delay Interval Illumination

ERIC Educational Resources Information Center

Hope, Chris; Santi, Angelo

2004-01-01

In Experiment 1, pigeons were trained at a 0-s baseline delay to discriminate sequences of light flashes (illumination of the feeder) that varied in number but not time (2f/4s and 8f/4s). During training, the intertrial interval was illuminated by the houselight for Group Light, but it was dark for Group Dark. Testing conducted with dark delay…

Smart Cards and remote entrusting

NASA Astrophysics Data System (ADS)

Aussel, Jean-Daniel; D'Annoville, Jerome; Castillo, Laurent; Durand, Stephane; Fabre, Thierry; Lu, Karen; Ali, Asad

Smart cards are widely used to provide security in end-to-end communication involving servers and a variety of terminals, including mobile handsets or payment terminals. Sometime, end-to-end server to smart card security is not applicable, and smart cards must communicate directly with an application executing on a terminal, like a personal computer, without communicating with a server. In this case, the smart card must somehow trust the terminal application before performing some secure operation it was designed for. This paper presents a novel method to remotely trust a terminal application from the smart card. For terminals such as personal computers, this method is based on an advanced secure device connected through the USB and consisting of a smart card bundled with flash memory. This device, or USB dongle, can be used in the context of remote untrusting to secure portable applications conveyed in the dongle flash memory. White-box cryptography is used to set the secure channel and a mechanism based on thumbprint is described to provide external authentication when session keys need to be renewed. Although not as secure as end-to-end server to smart card security, remote entrusting with smart cards is easy to deploy for mass-market applications and can provide a reasonable level of security.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Clinical Hypnosis in the Treatment of Post-Menopausal Hot Flashes: A Randomized Controlled Trial

PubMed Central

Elkins, Gary R.; Fisher, William I.; Johnson, Aimee K.; Carpenter, Janet S.; Keith, Timothy Z.

2012-01-01

Objective The use of estrogen and progesterone to manage vasomotor symptoms (i.e., hot flashes, night sweats) has declined due to concerns over their risks and there is an increased interest in alternate, effective, and low-risk treatments. This study reports the results of a randomized, controlled trial of clinical hypnosis in treating vasomotor symptoms among post-menopausal women. Methods Randomized, single-blind, controlled, clinical trial involving 187 post-menopausal women reporting a minimum of seven hot flashes per day, or at least 50 hot flashes a week at baseline between December 2008 and April 2012. Eligible participants received five weekly sessions of either clinical hypnosis or structured-attention control. Primary outcomes were hot flash frequency (subjectively and physiologically recorded) and hot flash score assessed by daily diaries at weeks 2–6, and 12. Secondary outcomes included measures of hot flash related daily interference, sleep quality and treatment satisfaction. Results In a modified intent-to-treat analysis that included all randomized participants that provided data, reported subjective hot flash frequency from baseline to week 12 showed a mean reduction of 55.82 hot flashes for the clinical hypnosis intervention (74.16%), versus a 12.89 hot flash reduction (17.13%) for the control (p<.001, 95% CI, 36.15–49.67). Mean reduction in hot flash score was 18.83 (80.32%) for the clinical hypnosis intervention as compared to 3.53 (15.38%) for the control (p<.001, 95% CI, 12.60–17.54). At 12 week follow-up, the mean reduction in physiologically monitored hot flashes was 5.92 (56.86%) for clinical hypnosis and .88 (9.94%) for the control (p<.001, 95% CI, 2.00–5.46). Secondary outcomes were significantly improved compared to control at 12 week follow-up in hot flash related interference (p<.001, 95% CI, 2.74–4.02), sleep quality (p<.001, 95% CI, 3.65–5.84), and treatment satisfaction (p<.001, 95% CI, 7.79–8.59). Conclusion Compared to a structured attention control, clinical hypnosis resulted in significant reductions in self-reported and physiologically measured hot flashes as well as hot flash scores in post-menopausal women. PMID:23435026

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

NASA Astrophysics Data System (ADS)

Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang

2017-06-01

Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb7Te3/Ge multilayer films by using a magnetron sputtering method. The 10 years’ data retention temperature is significantly increased compared with pure Sb7Te3. When the annealing temperature is above 250 °C, the Sb7Te3/Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

KSC-05PD-0565

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, a digital still camera has been mounted in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0562

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers check the digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the tank's separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0564

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, a worker mounts a digital still camera in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0561

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers prepare a digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following its separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-05PD-0563

NASA Technical Reports Server (NTRS)

2005-01-01

KENNEDY SPACE CENTER, FLA. In the Vehicle Assembly Building at NASAs Kennedy Space Center, workers prepare a digital still camera they will mount in the External Tank (ET) umbilical well on the aft end of Space Shuttle Discovery. The camera is being used to obtain and downlink high-resolution images of the disconnect point on the ET following the ET separation from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

PubMed

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

A Semi-Preemptive Garbage Collector for Solid State Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Junghee; Kim, Youngjae; Shipman, Galen M

2011-01-01

NAND flash memory is a preferred storage media for various platforms ranging from embedded systems to enterprise-scale systems. Flash devices do not have any mechanical moving parts and provide low-latency access. They also require less power compared to rotating media. Unlike hard disks, flash devices use out-of-update operations and they require a garbage collection (GC) process to reclaim invalid pages to create free blocks. This GC process is a major cause of performance degradation when running concurrently with other I/O operations as internal bandwidth is consumed to reclaim these invalid pages. The invocation of the GC process is generally governedmore » by a low watermark on free blocks and other internal device metrics that different workloads meet at different intervals. This results in I/O performance that is highly dependent on workload characteristics. In this paper, we examine the GC process and propose a semi-preemptive GC scheme that can preempt on-going GC processing and service pending I/O requests in the queue. Moreover, we further enhance flash performance by pipelining internal GC operations and merge them with pending I/O requests whenever possible. Our experimental evaluation of this semi-preemptive GC sheme with realistic workloads demonstrate both improved performance and reduced performance variability. Write-dominant workloads show up to a 66.56% improvement in average response time with a 83.30% reduced variance in response time compared to the non-preemptive GC scheme.« less

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Application of a distributed hydrological model to the design of a road inundation warning system for flash flood prone areas

NASA Astrophysics Data System (ADS)

Versini, P.-A.; Gaume, E.; Andrieu, H.

2010-04-01

This paper presents an initial prototype of a distributed hydrological model used to map possible road inundations in a region frequently exposed to severe flash floods: the Gard region (South of France). The prototype has been tested in a pseudo real-time mode on five recent flash flood events for which actual road inundations have been inventoried. The results are promising: close to 100% probability of detection of actual inundations, inundations detected before they were reported by the road management field teams with a false alarm ratios not exceeding 30%. This specific case study differs from the standard applications of rainfall-runoff models to produce flood forecasts, focussed on a single or a limited number of gauged river cross sections. It illustrates that, despite their lack of accuracy, hydro-meteorological forecasts based on rainfall-runoff models, especially distributed models, contain valuable information for flood event management. The possible consequences of landslides, debris flows and local erosion processes, sometimes associated with flash floods, were not considered at this stage of development of the prototype. They are limited in the Gard region but should be taken into account in future developments of the approach to implement it efficiently in other areas more exposed to these phenomena such as the Alpine area.

Foundry Technologies Focused on Environmental and Ecological Applications

NASA Astrophysics Data System (ADS)

Roizin, Ya.; Lisiansky, M.; Pikhay, E.

Solutions allowing fabrication of remote control systems with integrated sensors (motes) were introduced as a part of CMOS foundry production platform and verified on silicon. The integrated features include sensors employing principles previously verified in the development of ultra-low power consuming non-volatile memories (C-Flash, MRAM) and components allowing low-power energy harvesting (low voltage rectifiers, high -voltage solar cells). The developed systems are discussed with emphasis on their environmental and security applications.

Modular Electronics for Flash Memory Production

DTIC Science & Technology

2011-12-28

DEFENSE TECHNICAL INFORMATION CENTER ImuM ktkUmlimäj DTICfhas determined on oc öf^H AJI that this Technical Document has the Distribution...the second harmonic (8I2/8V2), and a normalization to remove the scale of the measured current. The red dashed lines represent notable vibrational...superimposed as red dashed lines. The agreement between the two spectroscopies is conclusive that we have successfully put our OPE derivative into the gap

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Seidleck, Christina; Kim, Hak; Phan, Anthony; LaBel, Kenneth

2017-01-01

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

ANXIETY AS A RISK FACTOR FOR MENOPAUSAL HOT FLASHES: EVIDENCE FROM THE PENN OVARIAN AGING COHORT

PubMed Central

Freeman, Ellen W.; Sammel, Mary D.

2016-01-01

Objective The aim of this study was to identify temporal associations of anxiety dimensions with menopausal hot flashes in women progressing through the menopause transition. We hypothesized that associations of both somatic and affective dimensions of anxiety with hot flashes increased in the menopause transition, and that somatic anxiety was an independent risk factor for menopausal hot flashes. Methods Hot flashes, anxiety symptoms, hormone levels and other psychosocial variables were assessed annually for 14 years of follow-up. The 233 women were premenopausal at baseline and continued through one year or more after the final menstrual period. Anxiety dimensions were assessed with the Zung Anxiety Scale (ZAS), a validated measure of affective anxiety and somatic anxiety. Summed item scores were divided by the number of items rated, so that ranges of the two dimensions were comparable. Results Seventy-two percent of the sample reported moderate/severe hot flashes during the 14-year interval. There was no significant interaction between anxiety dimensions and menopausal stages. However, when adjusted for menopausal stage, the magnitude of association between somatic anxiety and hot flashes dramatically increased (OR 3.03, 95% CI: 2.12, 4.32, P<0.001), while the association between affective anxiety and hot flashes increased to a lesser extent (OR 1.27, 95% CI: 1.03, 1.57, P=0.024). Women with high levels of somatic anxiety (top third of the sample) had the greatest risk of hot flashes (P<0.001). When the anxiety dimensions were considered in combination, the additive effect of high affective anxiety symptoms was minimal, with no significant difference between the group with high affective/low somatic symptoms and the low symptom group in incident hot flashes at each menopausal stage (P=0.54). In multivariable analysis, somatic anxiety increased the risk of hot flashes more than 3 times (OR 3.13, 95% CI: 2.16, 4.53, P<0.001), but affective anxiety was not significantly associated with hot flashes after adjustment for other study variables (OR 1.19, 95% CI: 0.96, 1.48, P=0.117). Time-lagged somatic anxiety scores significantly predicted hot flashes, with a 71% increase in risk (OR 1.71, 95% CI: 1.21, 2.41, P=0.002). Time-lagged affective anxiety scores did not predict hot flashes, (OR 1.06, 95% CI: 0.87, 1.31, P=0.58). Conclusions This study showed a strong predictive association of somatic anxiety with the risk of menopausal hot flashes. The temporal associations suggest that somatic anxiety is not simply a redundant measure of hot flashes but predicts the risk of menopausal hot flashes and may be a potential target in clinical management of perimenopausal women. PMID:27433864

Disaster Management in Flash Floods in Leh (Ladakh): A Case Study

PubMed Central

Gupta, Preeti; Khanna, Anurag; Majumdar, S

2012-01-01

Background: On August 6, 2010, in the dark of the midnight, there were flash floods due to cloud burst in Leh in Ladakh region of North India. It rained 14 inches in 2 hours, causing loss of human life and destruction. The civil hospital of Leh was badly damaged and rendered dysfunctional. Search and rescue operations were launched by the Indian Army immediately after the disaster. The injured and the dead were shifted to Army Hospital, Leh, and mass casualty management was started by the army doctors while relief work was mounted by the army and civil administration. Objective: The present study was done to document disaster management strategies and approaches and to assesses the impact of flash floods on human lives, health hazards, and future implications of a natural disaster. Materials and Methods: The approach used was both quantitative as well as qualitative. It included data collection from the primary sources of the district collectorate, interviews with the district civil administration, health officials, and army officials who organized rescue operations, restoration of communication and transport, mass casualty management, and informal discussions with local residents. Results: 234 persons died and over 800 were reported missing. Almost half of the people who died were local residents (49.6%) and foreigners (10.2%). Age-wise analysis of the deaths shows that the majority of deaths were reported in the age group of 25–50 years, accounting for 44.4% of deaths, followed by the 11–25-year age group with 22.2% deaths. The gender analysis showed that 61.5% were males and 38.5% were females. A further analysis showed that more females died in the age groups <10 years and ≥50 years. Conclusions: Disaster preparedness is critical, particularly in natural disasters. The Army's immediate search, rescue, and relief operations and mass casualty management effectively and efficiently mitigated the impact of flash floods, and restored normal life. PMID:23112446

Game-Based Experiential Learning in Online Management Information Systems Classes Using Intel's IT Manager 3

ERIC Educational Resources Information Center

Bliemel, Michael; Ali-Hassan, Hossam

2014-01-01

For several years, we used Intel's flash-based game "IT Manager 3: Unseen Forces" as an experiential learning tool, where students had to act as a manager making real-time prioritization decisions about repairing computer problems, training and upgrading systems with better technologies as well as managing increasing numbers of technical…

KSC-04PD-1812

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, United Space Alliance worker Craig Meyer fits an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04PD-1813

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, an External Tank (ET) digital still camera is positioned into the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis to determine if it fits properly. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1813

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, an External Tank (ET) digital still camera is positioned into the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis to determine if it fits properly. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1812

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, United Space Alliance worker Craig Meyer fits an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Endurance cycling results in extreme environments

NASA Technical Reports Server (NTRS)

Guertin, S. M.; Nguyen, D. N.; Scheick, L. Z.

2003-01-01

A new test bed for life testing flash memories in extreme environments is introducted. the test bed is based on a state-of-the-art development board. Since space applications often desire state-of-the-art devices, such a basis seems appropriate. Comparison of this tester to other such systems, including those with data presented here in the past is made. Limitations of different testers for varying applications are discussed. Recently developed data, using this test bed is also presented.

Memristive behavior in a junctionless flash memory cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orak, Ikram; Department of Physics, Faculty of Science and Art, Bingöl University, 12000 Bingöl; Ürel, Mustafa

2015-06-08

We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits themore » pinched hysteresis of a memristor and in the unoptimized device, R{sub off}/R{sub on} ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts R{sub off}/R{sub on} ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 10{sup 6 }s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.« less

Roll-to-roll nanopatterning using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ahn, Sean; Ganapathisubramanian, Maha; Miller, Mike; Yang, Jack; Choi, Jin; Xu, Frank; Resnick, Douglas J.; Sreenivasan, S. V.

2012-03-01

The ability to pattern materials at the nanoscale can enable a variety of applications ranging from high density data storage, displays, photonic devices and CMOS integrated circuits to emerging applications in the biomedical and energy sectors. These applications require varying levels of pattern control, short and long range order, and have varying cost tolerances. Extremely large area R2R manufacturing on flexible substrates is ubiquitous for applications such as paper and plastic processing. It combines the benefits of high speed and inexpensive substrates to deliver a commodity product at low cost. The challenge is to extend this approach to the realm of nanopatterning and realize similar benefits. The cost of manufacturing is typically driven by speed (or throughput), tool complexity, cost of consumables (materials used, mold or master cost, etc.), substrate cost, and the downstream processing required (annealing, deposition, etching, etc.). In order to achieve low cost nanopatterning, it is imperative to move towards high speed imprinting, less complex tools, near zero waste of consumables and low cost substrates. The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. In this paper we address the key challenges for roll based nanopatterning by introducing a novel concept: Ink Jet based Roll-to-Roll Nanopatterning. To address this challenge, we have introduced a J-FIL based demonstrator product, the LithoFlex 100. Topics that are discussed in the paper include tool design and process performance. In addition, we have used the LithoFlex 100 to fabricate high performance wire grid polarizers on flexible polycarbonate (PC) films. Transmission of better than 80% and extinction ratios on the order of 4500 have been achieved.

Blue light filtered white light induces depression-like responses and temporary spatial learning deficits in rats.

PubMed

Meng, Qinghe; Lian, Yuzheng; Jiang, Jianjun; Wang, Wei; Hou, Xiaohong; Pan, Yao; Chu, Hongqian; Shang, Lanqin; Wei, Xuetao; Hao, Weidong

2018-04-18

Ambient light has a vital impact on mood and cognitive functions. Blue light has been previously reported to play a salient role in the antidepressant effect via melanopsin. Whether blue light filtered white light (BFW) affects mood and cognitive functions remains unclear. The present study aimed to investigate whether BFW led to depression-like symptoms and cognitive deficits including spatial learning and memory abilities in rats, and whether they were associated with the light-responsive function in retinal explants. Male Sprague-Dawley albino rats were randomly divided into 2 groups (n = 10) and treated with a white light-emitting diode (LED) light source and BFW light source, respectively, under a standard 12 : 12 h L/D condition over 30 days. The sucrose consumption test, forced swim test (FST) and the level of plasma corticosterone (CORT) were employed to evaluate depression-like symptoms in rats. Cognitive functions were assessed by the Morris water maze (MWM) test. A multi-electrode array (MEA) system was utilized to measure electro-retinogram (ERG) responses induced by white or BFW flashes. The effect of BFW over 30 days on depression-like responses in rats was indicated by decreased sucrose consumption in the sucrose consumption test, an increased immobility time in the FST and an elevated level of plasma CORT. BFW led to temporary spatial learning deficits in rats, which was evidenced by prolonged escape latency and swimming distances in the spatial navigation test. However, no changes were observed in the short memory ability of rats treated with BFW. The micro-ERG results showed a delayed implicit time and reduced amplitudes evoked by BFW flashes compared to the white flash group. BFW induces depression-like symptoms and temporary spatial learning deficits in rats, which might be closely related to the impairment of light-evoked output signals in the retina.

Tree-based solvers for adaptive mesh refinement code FLASH - I: gravity and optical depths

NASA Astrophysics Data System (ADS)

Wünsch, R.; Walch, S.; Dinnbier, F.; Whitworth, A.

2018-04-01

We describe an OctTree algorithm for the MPI parallel, adaptive mesh refinement code FLASH, which can be used to calculate the gas self-gravity, and also the angle-averaged local optical depth, for treating ambient diffuse radiation. The algorithm communicates to the different processors only those parts of the tree that are needed to perform the tree-walk locally. The advantage of this approach is a relatively low memory requirement, important in particular for the optical depth calculation, which needs to process information from many different directions. This feature also enables a general tree-based radiation transport algorithm that will be described in a subsequent paper, and delivers excellent scaling up to at least 1500 cores. Boundary conditions for gravity can be either isolated or periodic, and they can be specified in each direction independently, using a newly developed generalization of the Ewald method. The gravity calculation can be accelerated with the adaptive block update technique by partially re-using the solution from the previous time-step. Comparison with the FLASH internal multigrid gravity solver shows that tree-based methods provide a competitive alternative, particularly for problems with isolated or mixed boundary conditions. We evaluate several multipole acceptance criteria (MACs) and identify a relatively simple approximate partial error MAC which provides high accuracy at low computational cost. The optical depth estimates are found to agree very well with those of the RADMC-3D radiation transport code, with the tree-solver being much faster. Our algorithm is available in the standard release of the FLASH code in version 4.0 and later.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

2011-08-01

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Anomalous annealing of floating gate errors due to heavy ion irradiation

NASA Astrophysics Data System (ADS)

Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong

2018-03-01

Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy-ion induced floating gate (FG) errors in 34 nm and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.

Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

NASA Astrophysics Data System (ADS)

Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

2016-08-01

NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

Analog Nonvolatile Computer Memory Circuits

NASA Technical Reports Server (NTRS)

MacLeod, Todd

2007-01-01

In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values.

Flash floods, hydro-geomorphic response and risk management

NASA Astrophysics Data System (ADS)

Braud, Isabelle; Borga, Marco; Gourley, Jonathan; Hürlimann, Marcel; Zappa, Massimilano; Gallart, Francesc

2016-10-01

Each year, natural disasters are responsible for fatalities and economic losses worldwide with 101 billion USD in economic losses and 7000 fatalities reported for 2014 (SwissRE, 2015). Even if earthquakes are responsible for most of these fatalities, flash floods and landslides are recognized as a significant source of threat to human lives (SwissRE, 2015). Jonkman (2005), in a global assessment of flood-related casualties, showed that flash floods lead to the highest mortality (number of fatalities divided by the number of affected people). They are also often associated with shallow landslides and geomorphic processes that can increase threat to human lives. Analysis of a global data set of fatalities from non-seismically triggered landslides (Petley, 2012) shows that 2620 fatal landslides were recorded worldwide in the period 2004-2010, causing a total of 32,322 recorded fatalities. In addition, heavy precipitation events, at the origin of flash floods and shallow landsliding are expected to increase in the future (e.g. Scoccimarro et al., 2016 for a recent study in Europe). Progress in flash floods and landslides understanding, forecasting and warning is therefore still needed to disentangle the complex interactions between hazards, exposure and vulnerability and to increase resilience (Borga et al., 2014).

Analysis of flash flood parameters and human impacts in the US from 2006 to 2012

NASA Astrophysics Data System (ADS)

Špitalar, Maruša; Gourley, Jonathan J.; Lutoff, Celine; Kirstetter, Pierre-Emmanuel; Brilly, Mitja; Carr, Nicholas

2014-11-01

Several different factors external to the natural hazard of flash flooding can contribute to the type and magnitude of their resulting damages. Human exposure, vulnerability, fatality and injury rates can be minimized by identifying and then mitigating the causative factors for human impacts. A database of flash flooding was used for statistical analysis of human impacts across the U.S. 21,549 flash flood events were analyzed during a 6-year period from October 2006 to 2012. Based on the information available in the database, physical parameters were introduced and then correlated to the reported human impacts. Probability density functions of the frequency of flash flood events and the PDF of occurrences weighted by the number of injuries and fatalities were used to describe the influence of each parameter. The factors that emerged as the most influential on human impacts are short flood durations, small catchment sizes in rural areas, vehicles, and nocturnal events with low visibility. Analyzing and correlating a diverse range of parameters to human impacts give us important insights into what contributes to fatalities and injuries and further raises questions on how to manage them.

Therapeutic options for the management of hot flashes in breast cancer survivors: an evidence-based review.

PubMed

Bordeleau, Louise; Pritchard, Kathleen; Goodwin, Pamela; Loprinzi, Charles

2007-02-01

Women with breast cancer may experience treatment-induced menopausal symptoms or natural menopause. Menopausal symptoms, particularly hot flashes, are reported at a high frequency in this group and tend to be more severe, distressing, and of greater duration than in controls. Because of the contribution of sex hormones to breast cancer, the use of hormonal agents for the control of hot flashes is problematic in these women. Safer nonhormonal alternatives are recommended for this patient group. This was a systematic review of the therapeutic options for the treatment of hot flashes in breast cancer survivors. MEDLINE was searched from 1990 to July 2006 using the disease-specific term breast neoplasms and the subheadings menopause and hot flashes. EMBASE was searched from 1990 to March 2006 using the disease-specific subject headings breast tumor/ breast cancer and menopause and the key word hot flashes. The reference lists of the identified articles and relevant review articles were examined for additional publications. Pertinent articles and abstracts of large randomized controlled trials focusing on the treatment of hot flashes in breast cancer survivors were selected for review. Pilot studies were excluded. A number of nonpharmacologic approaches are available for the treatment of hot flashes in breast cancer survivors, although they appear to be of limited effectiveness. Complementary alternative medicine therapies and vitamin E have been found to have modest effectiveness at best, and data on their long-term safety are not available. Centrally active agents such as the antidepressants venlafaxine and paroxetine and the anti seizure agent gabapentin have shown clinical effectiveness and appear to be reasonably well tolerated in this population. Centrally active agents (eg, venlafaxine, paroxetine, gabapentin) are regarded as the most promising nonhormonal treatments for hot flashes in breast cancer survivors. Nonpharmacologic and complementary alternative medicine therapies have limited effectiveness.

Towards Terabit Memories

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet little data on their energy/b. As a read-out memory with unparalleled retention and lifetime, the ROM with electron-beam direct-write-lithography (Chap. 8) should be considered for its projected 2D density of 250 Gb/cm², a very small read energy of 0.1 μW/Gb/s. The lithography write-speed 10 ms/Terabit makes this ROM a serious contentender for the optimum in non-volatile, tamper-proof storage.

Studying the hydro-meteorological extremes. The benefits from the European Flash Flood research oriented HYDRATE project.

NASA Astrophysics Data System (ADS)

Tsanis, Ioannis K.; Koutroulis, Aristeidis G.; Daliakopoulos, Ioannis N.; Grillakis, Emmanouil G.

2010-05-01

The present paper summarizes the advances of flash flood research for the Greek case study, within the frame of HYDRATE EC funded project. As a first step, a collation of homogenous primary data on flash floods occurred in Greece based on various data sources resulted in 21 documented events, enriching the HYDRATE database. Specific major events were selected for further detailed data collation and analysis. A common intensive post event field survey was conducted by various researchers with different skills and experience, in order to document the 18th of September 2007, Western Slovenia flash flood event. The observation strategy and the lessons learned during this campaign were applied successfully for surveying an event in Crete. Two flash flood events occurred in Crete were selected for detailed analysis, the 13th of January 1994 event occurred in Giofiros basin and the 17th of October 2006 event occurred in Almirida basin. Several techniques, like distributed rainfall-runoff modelling, hydraulic modelling, indirect and empirical peak discharge estimation, were applied for the understanding of the dominant flash flood processes and the effect of initial conditions on peak discharge. In a more general framework, the seasonality of the hydrometeorologic characteristics of floods that occurred in Crete during the period 1990-2007 and the atmospheric circulation conditions during the flood events were examined. During the three and a half years research period, many lessons have learnt from a fruitful collaboration among the project partners. HYDRATE project improved the scientific basis of flash flood research and provided research knowledge on flood risk management.

What can we learn from the deadly flash floods? Post Event Review Capability (PERC) analysis of the Bavaria and Baden-Wurttemberg flood events in Summer 2016

NASA Astrophysics Data System (ADS)

Szoenyi, Michael

2017-04-01

In May/June 2016, stationary low pressure systems brought intense rainfall with record-braking intensities of well above 100 mm rain in few hours locally in the southern states of Baden-Wurttemberg and Bavaria, Germany. In steep terrains, small channels and creeks became devastating torrents impacting, among others, the villages of Simbach/Inn, Schwäbisch-Gmünd and Braunsbach. Just few days prior, France had also seen devastating rainfall and flooding. Damage in Germany alone is estimated at 2.8 M USD, of which less than 50% are insured. The loss of life was significant, with 18 fatalities reported across the events. This new forensic event analysis as part of Zurich's Post Event Review Capability (PERC) investigates the flash flood events following these record rainfalls in Southern Germany and tries to answer the following questions holistically, across the five capitals (5C) and the full disaster risk management (DRM) cycle, which are key to understanding how to become more resilient to such flood events: - Why have these intense rainfall events led to such devastating consequences? The EU Floods directive and its implementation in the various member states, as well as the 2002 and 2013 Germany floods, have focused on larger rivers and the main asset concentration. The pathway and mechanism of the 2016 floods are very different and need to be better understood. Flash floods and surface flooding may need to become the new focus and be much better communicated to people at risk, as the awareness for such perils has been identified as low. - How can the prevalence for such flash floods be better identified and mapped? Research indicated that affected people and decision makers alike attribute the occurrence of such flash floods as arbitrary, but we argue that hotspots can and must be identified based on an overlay of rainfall intensity maps, topography leading to flash flood processes, and vulnerable assets. In Germany, there are currently no comprehensive hazard maps for flash and/or surface flooding. - What recommendations can be made from the investigation of the consequences? We highlight how additional processes that cause significant damage, such as log jams, backwater increase, temporary dam formation, etc., are currently insufficiently understood and incorporated into decision-making. - What are the social and human long-term effects of such flash flood events, and how can the insights from this review be incorporated into future decision-making to better protect people and assets as part of integrated flood risk management?

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

KSC-04PD-1810

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser prepare to conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04PD-1811

NASA Technical Reports Server (NTRS)

2004-01-01

KENNEDY SPACE CENTER, FLA. In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttles Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1811

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

KSC-04pd1810

NASA Image and Video Library

2004-09-17

KENNEDY SPACE CENTER, FLA. - In the Orbiter Processing Facility, from left, United Space Alliance workers Loyd Turner, Craig Meyer and Erik Visser prepare to conduct a fit check of an External Tank (ET) digital still camera in the right-hand liquid oxygen umbilical well on Space Shuttle Atlantis. NASA is pursuing use of the camera, beginning with the Shuttle’s Return To Flight, to obtain and downlink high-resolution images of the ET following separation of the ET from the orbiter after launch. The Kodak camera will record 24 images, at one frame per 1.5 seconds, on a flash memory card. After orbital insertion, the crew will transfer the images from the memory card to a laptop computer. The files will then be downloaded through the Ku-band system to the Mission Control Center in Houston for analysis.

Block-Parallel Data Analysis with DIY2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozov, Dmitriy; Peterka, Tom

DIY2 is a programming model and runtime for block-parallel analytics on distributed-memory machines. Its main abstraction is block-structured data parallelism: data are decomposed into blocks; blocks are assigned to processing elements (processes or threads); computation is described as iterations over these blocks, and communication between blocks is defined by reusable patterns. By expressing computation in this general form, the DIY2 runtime is free to optimize the movement of blocks between slow and fast memories (disk and flash vs. DRAM) and to concurrently execute blocks residing in memory with multiple threads. This enables the same program to execute in-core, out-of-core, serial,more » parallel, single-threaded, multithreaded, or combinations thereof. This paper describes the implementation of the main features of the DIY2 programming model and optimizations to improve performance. DIY2 is evaluated on benchmark test cases to establish baseline performance for several common patterns and on larger complete analysis codes running on large-scale HPC machines.« less

Impact of agricultural management on pluvial flash floods - Case study of an extreme event observed in Austria in 2016

NASA Astrophysics Data System (ADS)

Lumassegger, Simon; Achleitner, Stefan; Kohl, Bernhard

2017-04-01

Central Europe was affected by extreme flash floods in summer 2016 triggered by short, high-intensity storm cells. Besides fluvial runoff, local pluvial floods appear to increase recently. In frame of the research project SAFFER-CC (sensitivity assessment of critical condition for local flash floods - evaluating the recurrence under climate change) surface runoff and pluvial flooding is assessed using a coupled hydrological/2D hydrodynamic model for the severely affected municipality of Schwertberg, Upper Austria. In this small catchment several flooding events occurred in the last years, where the most severe event occurred during summer 2016. Several areas could only be reached after the flood wave subsided with observed flood marks up to one meter. The modeled catchment is intensively cultivated with maize, sugar beets, winter wheat and soy on the hillside and hence highly vulnerable to water erosion. The average inclination is relatively steep with 15 % leading to high flow velocities of surface runoff associated with large amounts of transported sediments. To assess the influence of land use and soil conservation on flash floods, field experiments with a portable irrigation spray installation were carried out at different locations. The test plots were subjected to rainfall with constant intensity of 100 mm/h for one hour. Consecutively a super intense, one hour lasting, rainfall hydrograph was applied after 30 minutes at the same plots, ranging from 50 mm/h to 200 mm/h. Surface runoff was collected and measured in a tank and water samples were taken to determine the suspended material load. Large differences of runoff coefficients were determined depending on the agricultural management. The largest discharge was measured in a maize field, where surface runoff occurred immediately after start of irrigation. The determined runoff coefficients ranged from 0.22 for soy up to 0.65 for maize for the same soil type and inclination. The conclusion that runoff is heavily influenced by land use matches well with the observed flow patterns during the storm event in summer 2016. The results clearly indicate the ability to reduce pluvial flash flood impacts by changing agricultural management practices.

Design of a Multi-Level/Analog Ferroelectric Memory Device

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2006-01-01

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandes, Ana; Pereira, Rita C.; Sousa, Jorge

The Instituto de Plasmas e Fusao Nuclear (IPFN) has developed dedicated re-configurable modules based on field programmable gate array (FPGA) devices for several nuclear fusion machines worldwide. Moreover, new Advanced Telecommunication Computing Architecture (ATCA) based modules developed by IPFN are already included in the ITER catalogue. One of the requirements for re-configurable modules operating in future nuclear environments including ITER is the remote update capability. Accordingly, this work presents an alternative method for FPGA remote programing to be implemented in new ATCA based re-configurable modules. FPGAs are volatile devices and their programming code is usually stored in dedicated flash memoriesmore » for properly configuration during module power-on. The presented method is capable to store new FPGA codes in Serial Peripheral Interface (SPI) flash memories using the PCIexpress (PCIe) network established on the ATCA back-plane, linking data acquisition endpoints and the data switch blades. The method is based on the Xilinx Quick Boot application note, adapted to PCIe protocol and ATCA based modules. (authors)« less

Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash

NASA Astrophysics Data System (ADS)

Zhang, Yu; Jin, Lei; Jiang, Dandan; Zou, Xingqi; Zhao, Zhiguo; Gao, Jing; Zeng, Ming; Zhou, Wenbin; Tang, Zhaoyun; Huo, Zongliang

2018-03-01

In order to optimize program disturbance characteristics effectively, a characterization approach that measures top select transistor (TSG) leakage from bit-line is proposed to quantify TSG leakage under program inhibit condition in 3D NAND flash memory. Based on this approach, the effect of Vth modulation of two-cell TSG on leakage is evaluated. By checking the dependence of leakage and corresponding program disturbance on upper and lower TSG Vth, this approach is validated. The optimal Vth pattern with high upper TSG Vth and low lower TSG Vth has been suggested for low leakage current and high boosted channel potential. It is found that upper TSG plays dominant role in preventing drain induced barrier lowering (DIBL) leakage from boosted channel to bit-line, while lower TSG assists to further suppress TSG leakage by providing smooth potential drop from dummy WL to edge of TSG, consequently suppressing trap assisted band-to-band tunneling current (BTBT) between dummy WL and TSG.

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Seidleck, Christina; Kim, Hak; Phan, Anthony; Label, Kenneth

2017-01-01

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories.

PubMed

Younis, Adnan; Chu, Dewei; Shah, Abdul Hadi; Du, Haiwei; Li, Sean

2017-01-18

As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta 2 O 5 , SiO 2 , etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe 3 O 4 film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag + , while Cu prefers to oxidize into Cu 2+ first, followed by Cu/Cu + oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe 3 O 4 -based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.

Hot flashes severity, complementary and alternative medicine use, and self-rated health in women with breast cancer.

PubMed

Chandwani, Kavita D; Heckler, Charles E; Mohile, Supriya G; Mustian, Karen M; Janelsins, Michelle; Peppone, Luke J; Bushunow, Peter; Flynn, Patrick J; Morrow, Gary R

2014-01-01

Hot flashes (HF) are a common distressing symptom in women with breast cancer (BC). Current pharmacologic options are moderately effective and are associated with bothersome side effects. Complementary and alternative medicine is commonly used by cancer patients. However, information on the association of hot flashes severity with such use and self-rated health is lacking. To examine the hot flashes severity in women with breast cancer and its association with complementary and alternative medicine use and self-rated health (SRH). Longitudinal multicenter study to assess information needs of cancer outpatients. Patients with a diagnosis of breast cancer who were scheduled to undergo chemotherapy and/or radiotherapy. Hot flashes severity (0 = not present and 10 = as bad as you can imagine), use of complementary and alternative medicine (yes/no), and self-rating of health (SRH) status post-treatment and six-months thereafter (1-5, higher score = better SRH). The majority of women with HF (mean age = 54.4 years) were Caucasian and married, with higher education, and 93% had received surgical treatment for BC. At the end of treatment, 79% women reported experiencing HF [mean severity = 5.87, standard deviation (SD) = 2.9]; significantly more severe HF were reported by younger women with poor SRH, poor performance status, and those reporting doing spiritual practices. At follow-up, 73% had HF (mean severity = 4.86, SD = 3.0), and more severe HF were reported by younger women with poor self-rated health who had undergone chemotherapy plus radiotherapy, used vitamins, and did not exercise. A high percentage of women experienced hot flashes at the end of treatment and at six-month follow-up. A significant association of hot flashes severity with spiritual practice, increased vitamin use, and reduced exercise emphasize the need for future studies to confirm the results. This can facilitate safe use of complementary and alternative medicine and favorable outcomes while managing cancer-related hot flashes. Copyright © 2014 Elsevier Inc. All rights reserved.

Integration of social vulnerability into emergency management plans: designing of evacuation routes against flood disasters

NASA Astrophysics Data System (ADS)

Aroca-Jimenez, Estefanía; Bodoque, Jose Maria; Garcia, Juan Antonio; Diez-Herrero, Andres

2017-04-01

Flash floods are highly spatio-temporal localized flood events characterized by reaching a high peak flow in a very short period of time, i.e., generally with times of concentration lower than six hours. Its short duration, which limits or even voids any warning time, means that flash floods are considered to be one of the most destructive natural hazards with the greatest capacity to generate risk, either in terms of the number of people affected globally or the proportion of individual fatalities. The above highlights the importance of a realistic and appropriate design of evacuation strategies in order to reduce flood-related losses, being evacuation planning considered of critical importance for disaster management. Traditionally, evacuation maps have been based on flood-prone areas, shelters or emergency residences location and evacuation routes information. However, evacuation plans rarely consider the spatial distribution of vulnerable population (i.e., people with special needs, mobility constraints or economic difficulties), which usually require assistance from emergency responders. The goal of this research is to elaborate an evacuation map against the occurrence of flash floods by combining geographic information (e.g. roads, health facilities location, sanitary helicopters) and social vulnerability patterns, which are previously obtained from socioeconomic variables (e.g. population, unemployment, dwelling characteristics). To do this, ArcGis Network Analyst tool is used, which allows to calculate the optimal evacuation routes. The methodology proposed here is implemented in the region of Castilla y León (94,230 km2). Urban areas prone to flash flooding are identified taking into account the following requirements: i) city centers are crossed by rivers or streams with a longitudinal slope higher than 0.01 m m-1; ii) city centers are potentially affected by flash floods; and iii) city centers are affected by an area with low or exceptional probability of flooding (i.e., 500-year flood). A total of 3 evacuation routes were designed and automatically traced for each of the 39 urban areas identified as interest, considering the nearest: i) health facility, ii) hospital; and iii) evacuation area (i.e. sports halls or any other). The suitable elaboration of evacuation plans is really important in small mountainous areas prone to flash flooding as they are managed by local organisms where available economic resources are often limited. Furthermore, the short response time obliges emergency responders to act efficiently, which requires the design of evacuation plans taking into account certain social characteristics for evacuation routes designing.

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

I/O performance evaluation of a Linux-based network-attached storage device

NASA Astrophysics Data System (ADS)

Sun, Zhaoyan; Dong, Yonggui; Wu, Jinglian; Jia, Huibo; Feng, Guanping

2002-09-01

In a Local Area Network (LAN), clients are permitted to access the files on high-density optical disks via a network server. But the quality of read service offered by the conventional server is not satisfied because of the multiple functions on the server and the overmuch caller. This paper develops a Linux-based Network-Attached Storage (NAS) server. The Operation System (OS), composed of an optimized kernel and a miniaturized file system, is stored in a flash memory. After initialization, the NAS device is connected into the LAN. The administrator and users could configure the access the server through the web page respectively. In order to enhance the quality of access, the management of buffer cache in file system is optimized. Some benchmark programs are peformed to evaluate the I/O performance of the NAS device. Since data recorded in optical disks are usually for reading accesses, our attention is focused on the reading throughput of the device. The experimental results indicate that the I/O performance of our NAS device is excellent.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanheusden, K.; Warren, W.L.; Devine, R.A.B.

It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protonsmore » are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).« less

Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

NASA Technical Reports Server (NTRS)

MacLeod, Todd; Ho, Fat D.

2012-01-01

The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere with the satellite s primary mission.

Transition from Target to Gaze Coding in Primate Frontal Eye Field during Memory Delay and Memory-Motor Transformation.

PubMed

Sajad, Amirsaman; Sadeh, Morteza; Yan, Xiaogang; Wang, Hongying; Crawford, John Douglas

2016-01-01

The frontal eye fields (FEFs) participate in both working memory and sensorimotor transformations for saccades, but their role in integrating these functions through time remains unclear. Here, we tracked FEF spatial codes through time using a novel analytic method applied to the classic memory-delay saccade task. Three-dimensional recordings of head-unrestrained gaze shifts were made in two monkeys trained to make gaze shifts toward briefly flashed targets after a variable delay (450-1500 ms). A preliminary analysis of visual and motor response fields in 74 FEF neurons eliminated most potential models for spatial coding at the neuron population level, as in our previous study (Sajad et al., 2015). We then focused on the spatiotemporal transition from an eye-centered target code (T; preferred in the visual response) to an eye-centered intended gaze position code (G; preferred in the movement response) during the memory delay interval. We treated neural population codes as a continuous spatiotemporal variable by dividing the space spanning T and G into intermediate T-G models and dividing the task into discrete steps through time. We found that FEF delay activity, especially in visuomovement cells, progressively transitions from T through intermediate T-G codes that approach, but do not reach, G. This was followed by a final discrete transition from these intermediate T-G delay codes to a "pure" G code in movement cells without delay activity. These results demonstrate that FEF activity undergoes a series of sensory-memory-motor transformations, including a dynamically evolving spatial memory signal and an imperfect memory-to-motor transformation.

VOP memory management in MPEG-4

NASA Astrophysics Data System (ADS)

Vaithianathan, Karthikeyan; Panchanathan, Sethuraman

2001-03-01

MPEG-4 is a multimedia standard that requires Video Object Planes (VOPs). Generation of VOPs for any kind of video sequence is still a challenging problem that largely remains unsolved. Nevertheless, if this problem is treated by imposing certain constraints, solutions for specific application domains can be found. MPEG-4 applications in mobile devices is one such domain where the opposite goals namely low power and high throughput are required to be met. Efficient memory management plays a major role in reducing the power consumption. Specifically, efficient memory management for VOPs is difficult because the lifetimes of these objects vary and these life times may be overlapping. Varying life times of the objects requires dynamic memory management where memory fragmentation is a key problem that needs to be addressed. In general, memory management systems address this problem by following a combination of strategy, policy and mechanism. For MPEG4 based mobile devices that lack instruction processors, a hardware based memory management solution is necessary. In MPEG4 based mobile devices that have a RISC processor, using a Real time operating system (RTOS) for this memory management task is not expected to be efficient because the strategies and policies used by the ROTS is often tuned for handling memory segments of smaller sizes compared to object sizes. Hence, a memory management scheme specifically tuned for VOPs is important. In this paper, different strategies, policies and mechanisms for memory management are considered and an efficient combination is proposed for the case of VOP memory management along with a hardware architecture, which can handle the proposed combination.

Comparative hazard analysis of processes leading to remarkable flash floods (France, 1930-1999)

NASA Astrophysics Data System (ADS)

Boudou, M.; Lang, M.; Vinet, F.; Cœur, D.

2016-10-01

Flash flood events are responsible for large economic losses and lead to fatalities every year in France. This is especially the case in the Mediterranean and oversea territories/departments of France, characterized by extreme hydro-climatological features and with a large part of the population exposed to flood risks. The recurrence of remarkable flash flood events, associated with high hazard intensity, significant damage and socio-political consequences, therefore raises several issues for authorities and risk management policies. This study aims to improve our understanding of the hazard analysis process in the case of four remarkable flood events: March 1930, October 1940, January 1980 and November 1999. Firstly, we present the methodology used to define the remarkability score of a flood event. Then, to identify the factors leading to a remarkable flood event, we explore the main parameters of the hazard analysis process, such as the meteorological triggering conditions, the return period of the rainfall and peak discharge, as well as some additional factors (initial catchment state, flood chronology, cascade effects, etc.). The results contribute to understanding the complexity of the processes leading to flood hazard and highlight the importance for risk managers of taking additional factors into account.

DOE Office of Scientific and Technical Information (OSTI.GOV)

R. Camp

Over the past four years, the Electrical Safety Program at PPPL has evolved in addressing changing regulatory requirements and lessons learned from accident events, particularly in regards to arc flash hazards and implementing NFPA 70E requirements. This presentation will discuss PPPL's approaches to the areas of electrical hazards evaluation, both shock and arc flash; engineered solutions for hazards mitigation such as remote racking of medium voltage breakers, operational changes for hazards avoidance, targeted personnel training and hazard appropriate personal protective equipment. Practical solutions for nominal voltage identification and zero voltage checks for lockout/tagout will also be covered. Finally, we willmore » review the value of a comprehensive electrical drawing program, employee attitudes expressed as a personal safety work ethic, integrated safety management, and sustained management support for continuous safety improvement.« less

Evaluating automatic attentional capture by self-relevant information.

PubMed

Ocampo, Brenda; Kahan, Todd A

2016-01-01

Our everyday decisions and memories are inadvertently influenced by self-relevant information. For example, we are faster and more accurate at making perceptual judgments about stimuli associated with ourselves, such as our own face or name, as compared with familiar non-self-relevant stimuli. Humphreys and Sui propose a "self-attention network" to account for these effects, wherein self-relevant stimuli automatically capture our attention and subsequently enhance the perceptual processing of self-relevant information. We propose that the masked priming paradigm and continuous flash suppression represent two ways to experimentally examine these controversial claims.

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

NASA Technical Reports Server (NTRS)

Campola, Michael; Wyrwas, Edward

2017-01-01

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.

MobRISK: a model for assessing the exposure of road users to flash flood events

NASA Astrophysics Data System (ADS)

Shabou, Saif; Ruin, Isabelle; Lutoff, Céline; Debionne, Samuel; Anquetin, Sandrine; Creutin, Jean-Dominique; Beaufils, Xavier

2017-09-01

Recent flash flood impact studies highlight that road networks are often disrupted due to adverse weather and flash flood events. Road users are thus particularly exposed to road flooding during their daily mobility. Previous exposure studies, however, do not take into consideration population mobility. Recent advances in transportation research provide an appropriate framework for simulating individual travel-activity patterns using an activity-based approach. These activity-based mobility models enable the prediction of the sequence of activities performed by individuals and locating them with a high spatial-temporal resolution. This paper describes the development of the MobRISK microsimulation system: a model for assessing the exposure of road users to extreme hydrometeorological events. MobRISK aims at providing an accurate spatiotemporal exposure assessment by integrating travel-activity behaviors and mobility adaptation with respect to weather disruptions. The model is applied in a flash-flood-prone area in southern France to assess motorists' exposure to the September 2002 flash flood event. The results show that risk of flooding mainly occurs in principal road links with considerable traffic load. However, a lag time between the timing of the road submersion and persons crossing these roads contributes to reducing the potential vehicle-related fatal accidents. It is also found that sociodemographic variables have a significant effect on individual exposure. Thus, the proposed model demonstrates the benefits of considering spatiotemporal dynamics of population exposure to flash floods and presents an important improvement in exposure assessment methods. Such improved characterization of road user exposures can present valuable information for flood risk management services.

High performance wire grid polarizers using jet and flashTM imprint lithography

NASA Astrophysics Data System (ADS)

Ahn, Sean; Yang, Jack; Miller, Mike; Ganapathisubramanian, Maha; Menezes, Marlon; Choi, Jin; Xu, Frank; Resnick, Douglas J.; Sreenivasan, S. V.

2013-03-01

The ability to pattern materials at the nanoscale can enable a variety of applications ranging from high density data storage, displays, photonic devices and CMOS integrated circuits to emerging applications in the biomedical and energy sectors. These applications require varying levels of pattern control, short and long range order, and have varying cost tolerances. Extremely large area roll to roll (R2R) manufacturing on flexible substrates is ubiquitous for applications such as paper and plastic processing. It combines the benefits of high speed and inexpensive substrates to deliver a commodity product at low cost. The challenge is to extend this approach to the realm of nanopatterning and realize similar benefits. The cost of manufacturing is typically driven by speed (or throughput), tool complexity, cost of consumables (materials used, mold or master cost, etc.), substrate cost, and the downstream processing required (annealing, deposition, etching, etc.). In order to achieve low cost nanopatterning, it is imperative to move towards high speed imprinting, less complex tools, near zero waste of consumables and low cost substrates. The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. In this paper we have developed a roll based J-FIL process and applied it to technology demonstrator tool, the LithoFlex 100, to fabricate large area flexible bilayer wire grid polarizers (WGP) and high performance WGPs on rigid glass substrates. Extinction ratios of better than 10000 were obtained for the glass-based WGPs. Two simulation packages were also employed to understand the effects of pitch, aluminum thickness and pattern defectivity on the optical performance of the WGP devices. It was determined that the WGPs can be influenced by both clear and opaque defects in the gratings, however the defect densities are relaxed relative to the requirements of a high density semiconductor device.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Modeling the Colorado Front Range Flood of 2013 with Coupled WRF and WRF-Hydro System

NASA Astrophysics Data System (ADS)

Unal, E.; Ramirez, J. A.

2015-12-01

Abstract. Flash floods are one of the most damaging natural disasters producing large socio-economic losses. Projected impacts of climate change include increases in the magnitude and the frequency of flash floods all around the world. Therefore, it is important to understand the physical processes of flash flooding to enhance our capacity for prediction, prevention, risk management, and recovery. However, understanding these processes is ambitious because of small spatial scale and sudden nature of flash floods, interactions with complex topography and land use, difficulty in defining initial soil moisture conditions, non-linearity of catchment response, and high space-time variability of storm characteristics. Thus, detailed regional case studies are needed, especially with respect to the interactions between the land surface and the atmosphere. One such flash flood event occurred recently in the Front Range of the Rocky Mountains of Colorado during September 9-15, 2013 causing 10 fatalities and $3B cost in damages. An unexpected persistent and moist weather pattern located over the mountains and produced seven-day extreme rainfall fed by moisture input from the Gulf of Mexico. We used a coupled WRF-WRF-Hydro modeling system to simulate this event for better understanding of the physical process and of the sensitivity of the hydrologic response to storm characteristics, initial soil moisture conditions, and watershed characteristics.

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Status of climacteric symptoms among middle-aged to elderly Japanese women: comparison of general healthy women with women presenting at a menopausal clinic.

PubMed

Ikeda, Toshiyuki; Makita, Kazuya; Ishitani, Ken; Takamatsu, Kiyoshi; Horiguchi, Fumi; Nozawa, Shiro

2005-04-01

To examine the status and characteristics of climacteric symptoms reported by generally healthy middle-aged to elderly women in Japan, those living in Saitama Prefecture were surveyed . The subjects comprised 398 women ranging in age from 40 to <60 years (mean age, 50.5 years). Climacteric symptoms were objectively assessed using the Keio questionnaire. The total scores obtained for the 40 symptoms were used to calculate symptom prevalence and severity. (i) The most frequent symptom was poor memory, reported by 88.7% of the women. (ii) Lumbar-sacral back pain was rated as a severe symptom by the highest percentage of women (15.3%). (iii) The prevalence and severity of poor memory and lumbar-sacral back pain did not differ with menopausal status. (iv) Hot flashes and sweats were slightly higher in peri- and early postmenopausal women than in premenopausal women. The present study showed that healthy women who do not consult physicians because of climacteric symptoms are primarily concerned with age-related symptoms, such as poor memory, loss of hair, and forgetfulness.

[Development of a video image system for wireless capsule endoscopes based on DSP].

PubMed

Yang, Li; Peng, Chenglin; Wu, Huafeng; Zhao, Dechun; Zhang, Jinhua

2008-02-01

A video image recorder to record video picture for wireless capsule endoscopes was designed. TMS320C6211 DSP of Texas Instruments Inc. is the core processor of this system. Images are periodically acquired from Composite Video Broadcast Signal (CVBS) source and scaled by video decoder (SAA7114H). Video data is transported from high speed buffer First-in First-out (FIFO) to Digital Signal Processor (DSP) under the control of Complex Programmable Logic Device (CPLD). This paper adopts JPEG algorithm for image coding, and the compressed data in DSP was stored to Compact Flash (CF) card. TMS320C6211 DSP is mainly used for image compression and data transporting. Fast Discrete Cosine Transform (DCT) algorithm and fast coefficient quantization algorithm are used to accelerate operation speed of DSP and decrease the executing code. At the same time, proper address is assigned for each memory, which has different speed;the memory structure is also optimized. In addition, this system uses plenty of Extended Direct Memory Access (EDMA) to transport and process image data, which results in stable and high performance.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

NASA Astrophysics Data System (ADS)

Pavel, Akeed A.; Khan, Mehjabeen A.; Kirawanich, Phumin; Islam, N. E.

2008-10-01

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Prospective memory in an air traffic control simulation: External aids that signal when to act

PubMed Central

Loft, Shayne; Smith, Rebekah E.; Bhaskara, Adella

2011-01-01

At work and in our personal life we often need to remember to perform intended actions at some point in the future, referred to as Prospective Memory. Individuals sometimes forget to perform intentions in safety-critical work contexts. Holding intentions can also interfere with ongoing tasks. We applied theories and methods from the experimental literature to test the effectiveness of external aids in reducing prospective memory error and costs to ongoing tasks in an air traffic control simulation. Participants were trained to accept and hand-off aircraft, and to detect aircraft conflicts. For the prospective memory task participants were required to substitute alternative actions for routine actions when accepting target aircraft. Across two experiments, external display aids were provided that presented the details of target aircraft and associated intended actions. We predicted that aids would only be effective if they provided information that was diagnostic of target occurrence and in this study we examined the utility of aids that directly cued participants when to allocate attention to the prospective memory task. When aids were set to flash when the prospective memory target aircraft needed to be accepted, prospective memory error and costs to ongoing tasks of aircraft acceptance and conflict detection were reduced. In contrast, aids that did not alert participants specifically when the target aircraft were present provided no advantage compared to when no aids we used. These findings have practical implications for the potential relative utility of automated external aids for occupations where individuals monitor multi-item dynamic displays. PMID:21443381

Prospective memory in an air traffic control simulation: external aids that signal when to act.

PubMed

Loft, Shayne; Smith, Rebekah E; Bhaskara, Adella

2011-03-01

At work and in our personal life we often need to remember to perform intended actions at some point in the future, referred to as Prospective Memory. Individuals sometimes forget to perform intentions in safety-critical work contexts. Holding intentions can also interfere with ongoing tasks. We applied theories and methods from the experimental literature to test the effectiveness of external aids in reducing prospective memory error and costs to ongoing tasks in an air traffic control simulation. Participants were trained to accept and hand-off aircraft and to detect aircraft conflicts. For the prospective memory task, participants were required to substitute alternative actions for routine actions when accepting target aircraft. Across two experiments, external display aids were provided that presented the details of target aircraft and associated intended actions. We predicted that aids would only be effective if they provided information that was diagnostic of target occurrence, and in this study, we examined the utility of aids that directly cued participants when to allocate attention to the prospective memory task. When aids were set to flash when the prospective memory target aircraft needed to be accepted, prospective memory error and costs to ongoing tasks of aircraft acceptance and conflict detection were reduced. In contrast, aids that did not alert participants specifically when the target aircraft were present provided no advantage compared to when no aids were used. These findings have practical implications for the potential relative utility of automated external aids for occupations where individuals monitor multi-item dynamic displays.

The conjunction of non-consciously perceived object identity and spatial position can be retained during a visual short-term memory task.

PubMed

Bergström, Fredrik; Eriksson, Johan

2015-01-01

Although non-consciously perceived information has previously been assumed to be short-lived (< 500 ms), recent findings show that non-consciously perceived information can be maintained for at least 15 s. Such findings can be explained as working memory without a conscious experience of the information to be retained. However, whether or not working memory can operate on non-consciously perceived information remains controversial, and little is known about the nature of such non-conscious visual short-term memory (VSTM). Here we used continuous flash suppression to render stimuli non-conscious, to investigate the properties of non-consciously perceived representations in delayed match-to-sample (DMS) tasks. In Experiment I we used variable delays (5 or 15 s) and found that performance was significantly better than chance and was unaffected by delay duration, thereby replicating previous findings. In Experiment II the DMS task required participants to combine information of spatial position and object identity on a trial-by-trial basis to successfully solve the task. We found that the conjunction of spatial position and object identity was retained, thereby verifying that non-conscious, trial-specific information can be maintained for prospective use. We conclude that our results are consistent with a working memory interpretation, but that more research is needed to verify this interpretation.

Geostatistical analysis of the flood risk perception queries in the village of Navaluenga (Central Spain)

NASA Astrophysics Data System (ADS)

Guardiola-Albert, Carolina; Díez-Herrero, Andrés; Amérigo, María; García, Juan Antonio; María Bodoque, José; Fernández-Naranjo, Nuria

2017-04-01

Flash floods provoke a high average mortality as they are usually unexpected events which evolve rapidly and affect relatively small areas. The short time available for minimizing risks requires preparedness and response actions to be put into practice. Therefore, it is necessary the development of emergency response plans to evacuate and rescue people in the context of a flash-flood hazard. In this framework, risk management has to integrate the social dimension of flash-flooding and its spatial distribution by understanding the characteristics of local communities in order to enhance community resilience during a flash-flood. In this regard, the flash-flood social risk perception of the village of Navaluenga (Central Spain) has been recently assessed, as well as the level of awareness of civil protection and emergency management strategies (Bodoque et al., 2016). This has been done interviewing 254 adults, representing roughly 12% of the population census. The present study wants to go further in the analysis of the resulting questionnaires, incorporating in the analysis the location of home spatial coordinates in order to characterize the spatial distribution and possible geographical interpretation of flood risk perception. We apply geostatistical methods to analyze spatial relations of social risk perception and level of awareness with distance to the rivers (Alberche and Chorrerón) or to the flood-prone areas (50-year, 100-year and 500-year flood plains). We want to discover spatial patterns, if any, using correlation functions (variograms). Geostatistical analyses results can help to either confirm the logical pattern (i.e., less awareness further to the rivers or high return period of flooding) or reveal departures from expected. It can also be possible to identify hot spots, cold spots, and spatial outliers. The interpretation of these spatial patterns can give valuable information to define strategies to improve the awareness regarding preparedness and response actions, such as designing optimal evacuation routes during flood emergencies. Geostatistical tools also provide a set of interpolation techniques for the prediction of the variable value at unstudied similar locations, basing on the sample point values and other variables related with the measured variable. We attempt different geostatistical interpolation methods to obtain continuous surfaces of the risk perception and level of awareness in the study area. The use of these maps for future extensions and actualizations of the Civil Protection Plan is evaluated. References Bodoque, J. M., Amérigo, M., Díez-Herrero, A., García, J. A., Cortés, B., Ballesteros-Cánovas, J. A., & Olcina, J. (2016). Improvement of resilience of urban areas by integrating social perception in flash-flood risk management.Journal of Hydrology.

Coupling Radar Rainfall Estimation and Hydrological Modelling For Flash-flood Hazard Mitigation

NASA Astrophysics Data System (ADS)

Borga, M.; Creutin, J. D.

Flood risk mitigation is accomplished through managing either or both the hazard and vulnerability. Flood hazard may be reduced through structural measures which alter the frequency of flood levels in the area. The vulnerability of a community to flood loss can be mitigated through changing or regulating land use and through flood warning and effective emergency response. When dealing with flash-flood hazard, it is gener- ally accepted that the most effective way (and in many instances the only affordable in a sustainable perspective) to mitigate the risk is by reducing the vulnerability of the involved communities, in particular by implementing flood warning systems and community self-help programs. However, both the inherent characteristics of the at- mospheric and hydrologic processes involved in flash-flooding and the changing soci- etal needs provide a tremendous challenge to traditional flood forecasting and warning concepts. In fact, the targets of these systems are traditionally localised like urbanised sectors or hydraulic structures. Given the small spatial scale that characterises flash floods and the development of dispersed urbanisation, transportation, green tourism and water sports, human lives and property are exposed to flash flood risk in a scat- tered manner. This must be taken into consideration in flash flood warning strategies and the investigated region should be considered as a whole and every section of the drainage network as a potential target for hydrological warnings. Radar technology offers the potential to provide information describing rain intensities almost contin- uously in time and space. Recent research results indicate that coupling radar infor- mation to distributed hydrologic modelling can provide hydrologic forecasts at all potentially flooded points of a region. Nevertheless, very few flood warning services use radar data more than on a qualitative basis. After a short review of current under- standing in this area, two issues are examined: advantages and caveats of using radar rainfall estimates in operational flash flood forecasting, methodological problems as- sociated to the use of hydrological models for distributed flash flood forecasting with rainfall input estimated from radar.

Flash Diffusivity Technique Applied to Individual Fibers

NASA Technical Reports Server (NTRS)

Mayeaux, Brian; Yowell, Leonard; Wang, Hsin

2007-01-01

A variant of the flash diffusivity technique has been devised for determining the thermal diffusivities, and thus the thermal conductivities, of individual aligned fibers. The technique is intended especially for application to nanocomposite fibers, made from narrower fibers of polyphenylene benzobisthiazole (PBZT) and carbon nanotubes. These highly aligned nanocomposite fibers could exploit the high thermal conductivities of carbon nanotubes for thermal-management applications. In the flash diffusivity technique as practiced heretofore, one or more heat pulse(s) is (are) applied to the front face of a plate or disk material specimen and the resulting time-varying temperature on the rear face is measured. Usually, the heat pulse is generated by use of a xenon flash lamp, and the variation of temperature on the rear face is measured by use of an infrared detector. The flash energy is made large enough to produce a usefully high temperature rise on the rear face, but not so large as to significantly alter the specimen material. Once the measurement has been completed, the thermal diffusivity of the specimen is computed from the thickness of the specimen and the time dependence of the temperature variation on the rear face. Heretofore, the infrared detector used in the flash diffusivity technique has been a single-point detector, which responds to a spatial average of the thermal radiation from the rear specimen surface. Such a detector cannot distinguish among regions of differing diffusivity within the specimen. Moreover, two basic assumptions of the thermaldiffusivity technique as practiced heretofore are that the specimen is homogeneous and that heat flows one-dimensionally from the front to the rear face. These assumptions are not valid for an inhomogeneous (composite) material.

Impact of rainfall spatial variability on Flash Flood Forecasting

NASA Astrophysics Data System (ADS)

Douinot, Audrey; Roux, Hélène; Garambois, Pierre-André; Larnier, Kevin

2014-05-01

According to the United States National Hazard Statistics database, flooding and flash flooding have caused the largest number of deaths of any weather-related phenomenon over the last 30 years (Flash Flood Guidance Improvement Team, 2003). Like the storms that cause them, flash floods are very variable and non-linear phenomena in time and space, with the result that understanding and anticipating flash flood genesis is far from straightforward. In the U.S., the Flash Flood Guidance (FFG) estimates the average number of inches of rainfall for given durations required to produce flash flooding in the indicated county. In Europe, flash flood often occurred on small catchments (approximately 100 km2) and it has been shown that the spatial variability of rainfall has a great impact on the catchment response (Le Lay and Saulnier, 2007). Therefore, in this study, based on the Flash flood Guidance method, rainfall spatial variability information is introduced in the threshold estimation. As for FFG, the threshold is the number of millimeters of rainfall required to produce a discharge higher than the discharge corresponding to the first level (yellow) warning of the French flood warning service (SCHAPI: Service Central d'Hydrométéorologie et d'Appui à la Prévision des Inondations). The indexes δ1 and δ2 of Zoccatelli et al. (2010), based on the spatial moments of catchment rainfall, are used to characterize the rainfall spatial distribution. Rainfall spatial variability impacts on warning threshold and on hydrological processes are then studied. The spatially distributed hydrological model MARINE (Roux et al., 2011), dedicated to flash flood prediction is forced with synthetic rainfall patterns of different spatial distributions. This allows the determination of a warning threshold diagram: knowing the spatial distribution of the rainfall forecast and therefore the 2 indexes δ1 and δ2, the threshold value is read on the diagram. A warning threshold diagram is built for each studied catchment. The proposed methodology is applied on three Mediterranean catchments often submitted to flash floods. The new forecasting method as well as the Flash Flood Guidance method (uniform rainfall threshold) are tested on 25 flash floods events that had occurred on those catchments. Results show a significant impact of rainfall spatial variability. Indeed, it appears that the uniform rainfall threshold (FFG threshold) always overestimates the observed rainfall threshold. The difference between the FFG threshold and the proposed threshold ranges from 8% to 30%. The proposed methodology allows the calculation of a threshold more representative of the observed one. However, results strongly depend on the related event duration and on the catchment properties. For instance, the impact of the rainfall spatial variability seems to be correlated with the catchment size. According to these results, it seems to be interesting to introduce information on the catchment properties in the threshold calculation. Flash Flood Guidance Improvement Team, 2003. River Forecast Center (RFC) Development Management Team. Final Report. Office of Hydrologic Development (OHD), Silver Spring, Mary-land. Le Lay, M. and Saulnier, G.-M., 2007. Exploring the signature of climate and landscape spatial variabilities in flash flood events: Case of the 8-9 September 2002 Cévennes-Vivarais catastrophic event. Geophysical Research Letters, 34(L13401), doi:10.1029/2007GL029746. Roux, H., Labat, D., Garambois, P.-A., Maubourguet, M.-M., Chorda, J. and Dartus, D., 2011. A physically-based parsimonious hydrological model for flash floods in Mediterranean catchments. Nat. Hazards Earth Syst. Sci. J1 - NHESS, 11(9), 2567-2582. Zoccatelli, D., Borga, M., Zanon, F., Antonescu, B. and Stancalie, G., 2010. Which rainfall spatial information for flash flood response modelling? A numerical investigation based on data from the Carpathian range, Romania. Journal of Hydrology, 394(1-2), 148-161.

Understanding and Managing Menopause | NIH MedlinePlus the Magazine

MedlinePlus

... of life," is different for each woman. For example, hot flashes and sleep problems may trouble your ... menopause. So can some types of operations. For example, surgery to remove your uterus called a hysterectomy) ...

Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene.

PubMed

Sun, Yanmei; Lu, Junguo; Ai, Chunpeng; Wen, Dianzhong; Bai, Xuduo

2016-11-09

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 10 4 , which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 10 4 read pulses and possessed a retention time of over 10 5 s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

On the origin of resistive switching volatility in Ni/TiO{sub 2}/Ni stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cortese, Simone, E-mail: simone.cortese@soton.ac.uk; Trapatseli, Maria; Khiat, Ali

2016-08-14

Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO{sub 2} is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin filmmore » sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.« less

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

PubMed

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Self Managing the Consequences of Major Limb Trauma

DTIC Science & Technology

2007-03-01

rehabilitation to the community – whether that be in the military or 15. SUBJECT TERMS Self Management, Trauma, Online Learning 16. SECURITY...Task # 1). The Flash platform was chosen based on its high level of market penetration (greater than 98% in the U.S.A.), ease of integration with...management system to facilitate seamless transitions between lessons, online chats, message boards, and evaluation questionnaires using a single security

Using an extended 2D hydrodynamic model for evaluating damage risk caused by extreme rain events: Flash-Flood-Risk-Map (FFRM) Upper Austria

NASA Astrophysics Data System (ADS)

Humer, Günter; Reithofer, Andreas

2016-04-01

Using an extended 2D hydrodynamic model for evaluating damage risk caused by extreme rain events: Flash-Flood-Risk-Map (FFRM) Upper Austria Considering the increase in flash flood events causing massive damage during the last years in urban but also rural areas [1-4], the requirement for hydrodynamic calculation of flash flood prone areas and possible countermeasures has arisen to many municipalities and local governments. Besides the German based URBAS project [1], also the EU-funded FP7 research project "SWITCH-ON" [5] addresses the damage risk caused by flash floods in the sub-project "FFRM" (Flash Flood Risk Map Upper Austria) by calculating damage risk for buildings and vulnerable infrastructure like schools and hospitals caused by flash-flood driven inundation. While danger zones in riverine flooding are established as an integral part of spatial planning, flash floods caused by overland runoff from extreme rain events have been for long an underrated safety hazard not only for buildings and infrastructure, but man and animals as well. Based on the widespread 2D-model "hydro_as-2D", an extension was developed, which calculates the runoff formation from a spatially and temporally variable precipitation and determines two dimensionally the land surface area runoff and its concentration. The conception of the model is to preprocess the precipitation data and calculate the effective runoff-volume for a short time step of e.g. five minutes. This volume is applied to the nodes of the 2D-model and the calculation of the hydrodynamic model is started. At the end of each time step, the model run is stopped, the preprocessing step is repeated and the hydraulic model calculation is continued. In view of the later use for the whole of Upper Austria (12.000 km²) a model grid of 25x25 m² was established using digital elevation data. Model parameters could be estimated for the small catchment of river Ach, which was hit by an intense rain event with up to 109 mm per hour at 20th of June 2012, based on open data sources of geology, soil and land use. The aim of FFRM is to provide an estimation of the damage risk caused by flash-floods for the whole of Upper Austria. To address the hazard, inundation depths were calculated with the extended 2D-model using design rains with an 100-year return period provided by the Environmental Ministry [7]. The potential damage was calculated using damage functions, which were derived from our experience from damage surveys of past events in Austria and according to guidelines for determination of cost-benefit-ratios for flood protection measures [8]. The greatest difficulty was to get appropriate data for the distribution of houses and industrial plants. Zoning plans provide good information on spatial distribution of residential, commercial and industrial areas, but does not contain information on the kind of industry, which is essential for estimating absolute damage values. To get a first idea detailed information from surveyed areas was intersected with the zoning plan, which provides an average damage in the respective zones. The first results can be found on www.waterviewer.com and will be updated with the further development of the project. [1] URBAS, risk management of extreme flooding events - prediction and management of flash floods in urban areas, www.urbanesturzfluten.de, prompted on 13th of November 2014 [2] Società Meteorologica Italiana (SMI), http://www.nimbus.it/eventi/2013/130624flashfloodRimini.pdf, prompted on 13th of November 2014 [3]Newspaper "Österreich", http://www.oe24.at/oesterreich/chronik/Sturzflut-Regen-legt-Ost-Oesterreich-lahm/1509113, prompted on 13th of November 2014 [4] Newspaper "Oberösterreichische Nachrichten", http://www.nachrichten.at/oberoesterreich/Unwetter-Mure-riss-Strasse-mit-Wohnhaus-in-Gosau-gefaehrdet;art4,911288 , prompted on 13th of November 2014 [5] Sharing Water-related Information to Tackle Changes in the Hydrosphere - for Operational Needs (SWITCH-ON), http://water-switch-on.eu [6] European Commission, directive 2007/60/EC of the European Parliament and the Council of 23rd October 2007 on the assessment and management of flood risks: http://eur-lex.europa.eu/LexUriServ/LexUriServ.do?uri=OJ:L:2007:288:0027:0034:en:PDF [7] http://ehyd.gv.at [8] Austrian Federal Ministry of Agriculture, Forestry, Environment and Water Management: „Kosten-Nutzen-Untersuchungen im Schutzwaserbau", July 2009

Managing Chemotherapy Side Effects: Memory Changes

MedlinePlus

... C ancer I nstitute Managing Chemotherapy Side Effects Memory Changes What is causing these changes? Your doctor ... thinking or remembering things Managing Chemotherapy Side Effects: Memory Changes Get help to remember things. Write down ...

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

Extended memory management under RTOS

NASA Technical Reports Server (NTRS)

Plummer, M.

1981-01-01

A technique for extended memory management in ROLM 1666 computers using FORTRAN is presented. A general software system is described for which the technique can be ideally applied. The memory manager interface with the system is described. The protocols by which the manager is invoked are presented, as well as the methods used by the manager.

Why Flash Type Matters: A Statistical Analysis

NASA Astrophysics Data System (ADS)

Mecikalski, Retha M.; Bitzer, Phillip M.; Carey, Lawrence D.

2017-09-01

While the majority of research only differentiates between intracloud (IC) and cloud-to-ground (CG) flashes, there exists a third flash type, known as hybrid flashes. These flashes have extensive IC components as well as return strokes to ground but are misclassified as CG flashes in current flash type analyses due to the presence of a return stroke. In an effort to show that IC, CG, and hybrid flashes should be separately classified, the two-sample Kolmogorov-Smirnov (KS) test was applied to the flash sizes, flash initiation, and flash propagation altitudes for each of the three flash types. The KS test statistically showed that IC, CG, and hybrid flashes do not have the same parent distributions and thus should be separately classified. Separate classification of hybrid flashes will lead to improved lightning-related research, because unambiguously classified hybrid flashes occur on the same order of magnitude as CG flashes for multicellular storms.

Nocturnal Hot Flashes: Relationship to Objective Awakenings and Sleep Stage Transitions

PubMed Central

Bianchi, Matt T.; Kim, Semmie; Galvan, Thania; White, David P.; Joffe, Hadine

2016-01-01

Study Objectives: While women report sleep interruption secondary to nighttime hot flashes, the sleep disrupting impact of nocturnal hot flashes (HF) is not well characterized. We utilized a model of induced HF to investigate the relationship of nighttime HF to sleep architecture and sleep-stage transitions. Methods: Twenty-eight healthy, premenopausal volunteers received the depot gonadotropin-releasing hormone agonist (GnRHa) leuprolide to rapidly induce menopause, manifesting with HF. Sleep disruption was measured on 2 polysomnograms conducted before and after 4–5 weeks on leuprolide, when HF had developed. Results: 165 HF episodes were recorded objectively during 48 sleep studies (mean 3.4 HF/night). After standardizing to sleep-stage time distribution, the majority of HF were recorded during wake (51.0%) and stage N1 (18.8%). Sixty-six percent of HF occurred within 5 minutes of an awakening, with 80% occurring just before or during the awakening. Objective HF were not associated with sleep disruption as measured by increased transitions to wake or N1, but self-reported nocturnal HF correlated with an increase from pre- to post-leuprolide in the rate of transitions to wake (p = 0.01), and to N1 (p = 0.008). Conclusions: By isolating the effect of HF on sleep in women without the confound of age-related sleep changes associated with natural menopause, this experimental model shows that HF arise most commonly during N1 and wake, typically preceding or occurring simultaneously with wake episodes. Perception of HF, but not objective HF, is linked to increased sleep-stage transitions, suggesting that sleep disruption increases awareness of and memory for nighttime HF events. Clinical Trial Registration: ClinicalTrials.gov Identifier: NCT01116401. Citation: Bianchi MT, Kim S, Galvan T, White DP, Joffe H. Nocturnal hot flashes: relationship to objective awakenings and sleep stage transitions. J Clin Sleep Med 2016;12(7):1003–1009. PMID:26951410

Time evolution of coherent structures in networks of Hindmarch Rose neurons

NASA Astrophysics Data System (ADS)

Mainieri, M. S.; Erichsen, R.; Brunnet, L. G.

2005-08-01

In the regime of partial synchronization, networks of diffusively coupled Hindmarch-Rose neurons show coherent structures developing in a region of the phase space which is wider than in the correspondent single neuron. Such structures are kept, without important changes, during several bursting periods. In this work, we study the time evolution of these structures and their dynamical stability under damage. This system may model the behavior of ensembles of neurons coupled through a bidirectional gap junction or, in a broader sense, it could also account for the molecular cascades present in the formation of flash and short time memory.

Moore's law realities for recording systems and memory storage components: HDD, tape, NAND, and optical

NASA Astrophysics Data System (ADS)

Fontana, Robert E.; Decad, Gary M.

2018-05-01

This paper describes trends in the storage technologies associated with Linear Tape Open (LTO) Tape cartridges, hard disk drives (HDD), and NAND Flash based storage devices including solid-state drives (SSD). This technology discussion centers on the relationship between cost/bit and bit density and, specifically on how the Moore's Law perception that areal density doubling and cost/bit halving every two years is no longer being achieved for storage based components. This observation and a Moore's Law Discussion are demonstrated with data from 9-year storage technology trends, assembled from publically available industry reporting sources.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Synchronizing Photography For High-Speed-Engine Research

NASA Technical Reports Server (NTRS)

Chun, K. S.

1989-01-01

Light flashes when shaft reaches predetermined angle. Synchronization system facilitates visualization of flow in high-speed internal-combustion engines. Designed for cinematography and holographic interferometry, system synchronizes camera and light source with predetermined rotational angle of engine shaft. 10-bit resolution of absolute optical shaft encoder adapted, and 2 to tenth power combinations of 10-bit binary data computed to corresponding angle values. Pre-computed angle values programmed into EPROM's (erasable programmable read-only memories) to use as angle lookup table. Resolves shaft angle to within 0.35 degree at rotational speeds up to 73,240 revolutions per minute.

A microcontroller-based implantable nerve stimulator used for rats.

PubMed

Sha, Hong; Zheng, Zheng; Wang, Yan; Ren, Chaoshi

2005-01-01

A microcontroller-based stimulator that can be flexible programmed after it has been implanted into a rat was studied. Programmability enables implanted stimulators to generate customized, complex protocols for experiments. After implantation, a coded light pulse train that contains information of specific identification will unlock a certain stimulator. If a command that changing the parameters is received, the microcontroller will update its flash memory after it affirms the commands. The whole size of it is only 1.6 cubic centimeters, and it can work for a month. The devices have been successfully used in animal behavior experiments, especially on rats.

UDCM Operating Procedure (Limited Functionality prototype)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newell, Matthew R.

2016-06-14

The UDCM is a two channel low current measurement device designed to record sub-nano-amp to micro-amp currents from radiation detectors. The UDCM incorporates a Commercial-Off-The- Shelf (COTS) processor enabling both serial over USB as well as Ethernet communications. The instrument includes microSD and USB flash memory for data storage as well as a programmable High Voltage (HV) power supply for detector bias. The UDCM incorporates a unique TTL output feature first used in the LANL Current to Pulse Converter (CPC). Two SMA connectors on the UDCM provide TTL pulses at a frequency proportional to the input currents.

JTAG-based remote configuration of FPGAs over optical fibers

DOE PAGES

Deng, B.; Xu, H.; Liu, C.; ...

2015-01-28

In this study, a remote FPGA-configuration method based on JTAG extension over optical fibers is presented. The method takes advantage of commercial components and ready-to-use software such as iMPACT and does not require any hardware or software development. The method combines the advantages of the slow remote JTAG configuration and the fast local flash memory configuration. The method has been verified successfully and used in the Demonstrator of Liquid-Argon Trigger Digitization Board (LTDB) for the ATLAS liquid argon calorimeter Phase-I trigger upgrade. All components on the FPGA side are verified to meet the radiation tolerance requirements.

Network resiliency through memory health monitoring and proactive management

DOEpatents

Andrade Costa, Carlos H.; Cher, Chen-Yong; Park, Yoonho; Rosenburg, Bryan S.; Ryu, Kyung D.

2017-11-21

A method for managing a network queue memory includes receiving sensor information about the network queue memory, predicting a memory failure in the network queue memory based on the sensor information, and outputting a notification through a plurality of nodes forming a network and using the network queue memory, the notification configuring communications between the nodes.

NASA Tech Briefs, June 2009

NASA Technical Reports Server (NTRS)

2009-01-01

Topics covered include: Device for Measuring Low Flow Speed in a Duct, Measuring Thermal Conductivity of a Small Insulation Sample, Alignment Jig for the Precise Measurement of THz Radiation, Autoignition Chamber for Remote Testing of Pyrotechnic Devices, Microwave Power Combiners for Signals of Arbitrary Amplitude, Synthetic Foveal Imaging Technology, Airborne Antenna System for Minimum-Cycle-Slip GPS Reception, Improved Starting Materials for Back-Illuminated Imagers, Multi-Modulator for Bandwidth-Efficient Communication, Some Improvements in Utilization of Flash Memory Devices, GPS/MEMS IMU/Microprocessor Board for Navigation, T/R Multi-Chip MMIC Modules for 150 GHz, Pneumatic Haptic Interfaces, Device Acquires and Retains Rock or Ice Samples, Cryogenic Feedthrough Test Rig, Improved Assembly for Gas Shielding During Welding or Brazing, Two-Step Plasma Process for Cleaning Indium Bonding Bumps, Tool for Crimping Flexible Circuit Leads, Yb14MnSb11 as a High-Efficiency Thermoelectric Material, Polyimide-Foam/Aerogel Composites for Thermal Insulation, Converting CSV Files to RKSML Files, Service Management Database for DSN Equipment, Chemochromic Hydrogen Leak Detectors, Compatibility of Segments of Thermoelectric Generators, Complementary Barrier Infrared Detector, JPL Greenland Moulin Exploration Probe, Ultra-Lightweight Self-Deployable Nanocomposite Structure for Habitat Applications, and Room-Temperature Ionic Liquids for Electrochemical Capacitors.

Flash Foods' Job Creation and Petroleum Independence with E85

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walk, Steve

Protec Fuel Management project objectives are to help design, build, provide, promote and supply biofuels for the greater energy independence, national security and domestic economic growth through job creations, infrastructure projects and supply chain business stimulants.

Are Categorical Spatial Relations Encoded by Shifting Visual Attention between Objects?

PubMed Central

Uttal, David; Franconeri, Steven

2016-01-01

Perceiving not just values, but relations between values, is critical to human cognition. We tested the predictions of a proposed mechanism for processing categorical spatial relations between two objects—the shift account of relation processing—which states that relations such as ‘above’ or ‘below’ are extracted by shifting visual attention upward or downward in space. If so, then shifts of attention should improve the representation of spatial relations, compared to a control condition of identity memory. Participants viewed a pair of briefly flashed objects and were then tested on either the relative spatial relation or identity of one of those objects. Using eye tracking to reveal participants’ voluntary shifts of attention over time, we found that when initial fixation was on neither object, relational memory showed an absolute advantage for the object following an attention shift, while identity memory showed no advantage for either object. This result is consistent with the shift account of relation processing. When initial fixation began on one of the objects, identity memory strongly benefited this fixated object, while relational memory only showed a relative benefit for objects following an attention shift. This result is also consistent, although not as uniquely, with the shift account of relation processing. Taken together, we suggest that the attention shift account provides a mechanistic explanation for the overall results. This account can potentially serve as the common mechanism underlying both linguistic and perceptual representations of spatial relations. PMID:27695104

Are Categorical Spatial Relations Encoded by Shifting Visual Attention between Objects?

PubMed

Yuan, Lei; Uttal, David; Franconeri, Steven

2016-01-01

Perceiving not just values, but relations between values, is critical to human cognition. We tested the predictions of a proposed mechanism for processing categorical spatial relations between two objects-the shift account of relation processing-which states that relations such as 'above' or 'below' are extracted by shifting visual attention upward or downward in space. If so, then shifts of attention should improve the representation of spatial relations, compared to a control condition of identity memory. Participants viewed a pair of briefly flashed objects and were then tested on either the relative spatial relation or identity of one of those objects. Using eye tracking to reveal participants' voluntary shifts of attention over time, we found that when initial fixation was on neither object, relational memory showed an absolute advantage for the object following an attention shift, while identity memory showed no advantage for either object. This result is consistent with the shift account of relation processing. When initial fixation began on one of the objects, identity memory strongly benefited this fixated object, while relational memory only showed a relative benefit for objects following an attention shift. This result is also consistent, although not as uniquely, with the shift account of relation processing. Taken together, we suggest that the attention shift account provides a mechanistic explanation for the overall results. This account can potentially serve as the common mechanism underlying both linguistic and perceptual representations of spatial relations.

Management of surgically hypogonadal patients unable to take sex hormone replacement therapy.

PubMed

Nieman, Lynnette K

2003-06-01

Lifestyle changes in diet, exercise and the environment may help to prevent or ameliorate hot flashes and low bone density in men and women after surgical castration. Conventional medications, including megestrol acetate, SSRIs or clonidine, may improve hot flashes but may have limiting side effects. Some complementary and alternative approaches, including black cohosh, vitamin E, and soy products, work as well as placebo to decrease hot flashes and may be helpful, because they have low toxicity. Acupuncture and neurontin are promising but must be studied further. With regards to the prevention of osteoporosis and fractures in men and women, bisphosphonates are the most potent of the currently available agents; calcitonin is less effective. PTH has a large beneficial effect but is not yet available and is less well studied. In women, continued sexual intercourse and use of vaginal lubricants and moisturizers help to minimize symptoms of vaginal atrophy but do not ameliorate urinary symptoms. Low dose local estrogen treatment is a promising approach for the latter complaints.

Memory management in genome-wide association studies

PubMed Central

2009-01-01

Genome-wide association is a powerful tool for the identification of genes that underlie common diseases. Genome-wide association studies generate billions of genotypes and pose significant computational challenges for most users including limited computer memory. We applied a recently developed memory management tool to two analyses of North American Rheumatoid Arthritis Consortium studies and measured the performance in terms of central processing unit and memory usage. We conclude that our memory management approach is simple, efficient, and effective for genome-wide association studies. PMID:20018047

Prospective memory in schizophrenia: relationship to medication management skills, neurocognition, and symptoms in individuals with schizophrenia.

PubMed

Raskin, Sarah A; Maye, Jacqueline; Rogers, Alexandra; Correll, David; Zamroziewicz, Marta; Kurtz, Matthew

2014-05-01

Impaired adherence to medication regimens is a serious concern for individuals with schizophrenia linked to relapse and poorer outcomes. One possible reason for poor adherence to medication is poor ability to remember future intentions, labeled prospective memory skills. It has been demonstrated in several studies that individuals with schizophrenia have impairments in prospective memory that are linked to everyday life skills. However, there have been no studies, to our knowledge, examining the relationship of a clinical measure of prospective memory to medication management skills, a key element of successful adherence. In this Study 41 individuals with schizophrenia and 25 healthy adults were administered a standardized test battery that included measures of prospective memory, medication management skills, neurocognition, and symptoms. Individuals with schizophrenia demonstrated impairments in prospective memory (both time and event-based) relative to healthy controls. Performance on the test of prospective memory was correlated with the standardized measure of medication management in individuals with schizophrenia. Moreover, the test of prospective memory predicted skills in medication adherence even after measures of neurocognition were accounted for. This suggests that prospective memory may play a key role in medication management skills and thus should be a target of cognitive remediation programs.

Visualization of cavitating and flashing flows within a high aspect ratio injector

NASA Astrophysics Data System (ADS)

Thompson, Andrew S.

Thermal management issues necessitate the use of fuel as a heat sink for gas turbine and liquid rocket engines. There are certain benefits to using heated fuels, namely, increased sensible enthalpy, increased combustion efficiency, a decrease in certain emissions, and enhanced vaporization characteristics. However, the thermal and pressure enviornment inside an injector can result in the fuel flashing to vapor. Depending on the injector design, this can have deleterious effects on engine performance. As interest in heated fuels inreases, it is important to understand what occurs in the flow path of an injector under flashing conditions. At the High Pressure Laboratory at Purdue University's Maurice J. Zucrow Laboritories, a test rig was designed and built to give visual access into the flow path of a 2-D slot injector. The rig is capable of pressurizing and heating a liquid to superheated conditions and utilizes a pneumatically actuated piston to pusth the liquid through the slot injector. Methanol was chosen as a surrogate fuel to allow for high levels of superheat at relatively low temperatures. Testing was completed with acrylic and quartz injectors of varying L/DH. Flashing conditions inside the injector flow path were induced via a combination of heating and back pressure adjustments. Volume flow rate, pressure measurements, and temperature measurements were made which allowed the discharge characteristics, the level of superheat, and other parameters to be calculated and compared. To give a basis for comparison the flashing results are compared to the flow through the injector under cavitating conditions. Cavitation and flashing appear to be related phenomena and this relationship is shown. Bubble formation under cavitating or flashing conditions is observed to attenuate the injector's discharge characteristics. High speed videos of the flow field were also collected. Several flow regimes and flow structures, unique to these regimes, were observed. A frequency analysis was also performed on the video files. Bubble formation in the flow field dominates the frequency spectrum, which is confined below 1 kHz. The test campaign was successful. The result is a possible way to predict an injector's performance under flashing conditions without running heated fuel through the injector. These results may be applicable to real world injector design and testing.

Hard Real-Time: C++ Versus RTSJ

NASA Technical Reports Server (NTRS)

Dvorak, Daniel L.; Reinholtz, William K.

2004-01-01

In the domain of hard real-time systems, which language is better: C++ or the Real-Time Specification for Java (RTSJ)? Although ordinary Java provides a more productive programming environment than C++ due to its automatic memory management, that benefit does not apply to RTSJ when using NoHeapRealtimeThread and non-heap memory areas. As a result, RTSJ programmers must manage non-heap memory explicitly. While that's not a deterrent for veteran real-time programmers-where explicit memory management is common-the lack of certain language features in RTSJ (and Java) makes that manual memory management harder to accomplish safely than in C++. This paper illustrates the problem for practitioners in the context of moving data and managing memory in a real-time producer/consumer pattern. The relative ease of implementation and safety of the C++ programming model suggests that RTSJ has a struggle ahead in the domain of hard real-time applications, despite its other attractive features.

Evaluating the impact and risk of pluvial flash flood on intra-urban road network: A case study in the city center of Shanghai, China

NASA Astrophysics Data System (ADS)

Yin, Jie; Yu, Dapeng; Yin, Zhane; Liu, Min; He, Qing

2016-06-01

Urban pluvial flood are attracting growing public concern due to rising intense precipitation and increasing consequences. Accurate risk assessment is critical to an efficient urban pluvial flood management, particularly in transportation sector. This paper describes an integrated methodology, which initially makes use of high resolution 2D inundation modeling and flood depth-dependent measure to evaluate the potential impact and risk of pluvial flash flood on road network in the city center of Shanghai, China. Intensity-Duration-Frequency relationships of Shanghai rainstorm and Chicago Design Storm are combined to generate ensemble rainfall scenarios. A hydrodynamic model (FloodMap-HydroInundation2D) is used to simulate overland flow and flood inundation for each scenario. Furthermore, road impact and risk assessment are respectively conducted by a new proposed algorithm and proxy. Results suggest that the flood response is a function of spatio-temporal distribution of precipitation and local characteristics (i.e. drainage and topography), and pluvial flash flood is found to lead to proportionate but nonlinear impact on intra-urban road inundation risk. The approach tested here would provide more detailed flood information for smart management of urban street network and may be applied to other big cities where road flood risk is evolving in the context of climate change and urbanization.

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

PubMed Central

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-01-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories. PMID:28513590

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-05-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

NASA's 3D Flight Computer for Space Applications

NASA Technical Reports Server (NTRS)

Alkalai, Leon

2000-01-01

The New Millennium Program (NMP) Integrated Product Development Team (IPDT) for Microelectronics Systems was planning to validate a newly developed 3D Flight Computer system on its first deep-space flight, DS1, launched in October 1998. This computer, developed in the 1995-97 time frame, contains many new computer technologies previously never used in deep-space systems. They include: advanced 3D packaging architecture for future low-mass and low-volume avionics systems; high-density 3D packaged chip-stacks for both volatile and non-volatile mass memory: 400 Mbytes of local DRAM memory, and 128 Mbytes of Flash memory; high-bandwidth Peripheral Component Interface (Per) local-bus with a bridge to VME; high-bandwidth (20 Mbps) fiber-optic serial bus; and other attributes, such as standard support for Design for Testability (DFT). Even though this computer system did not complete on time for delivery to the DS1 project, it was an important development along a technology roadmap towards highly integrated and highly miniaturized avionics systems for deep-space applications. This continued technology development is now being performed by NASA's Deep Space System Development Program (also known as X2000) and within JPL's Center for Integrated Space Microsystems (CISM).

Measuring hot flash phenomenonology using ambulatory prospective digital diaries

PubMed Central

Fisher, William I.; Thurston, Rebecca C.

2016-01-01

Objective This study provides the description, protocol, and results from a novel prospective ambulatory digital hot flash phenomenon diary. Methods This study included 152 midlife women with daily hot flashes who completed an ambulatory electronic hot flash diary continuously for the waking hours of 3 consecutive days. In this diary, women recorded their hot flashes and accompanying characteristics and associations as the hot flashes occurred. Results Self-reported hot flash severity on the digital diaries indicated that the majority of hot flashes were rated as mild (41.3%) or moderate (43.7%). Severe (13.1%) and very severe (1.8%) hot flashes were less common. Hot flash bother ratings were rated as mild (43%), or moderate (33.5%), with fewer hot flashes reported bothersome (17.5%) or very bothersome (6%). The majority of hot flashes were reported as occurring on the on the face (78.9%), neck (74.7%), and chest (61.3%). Prickly skin was reported concurrently with 32% of hot flashes, 7% with anxiety and 5% with nausea. A novel finding, 38% of hot flashes were accompanied by a premonitory aura. Conclusion A prospective electronic digital hot flash diary allows for a more precise quantitation of hot flashes while overcoming many of the limitations of commonly employed retrospective questionnaires and paper diaries. Unique insights into the phenomenology, loci and associated characteristics of hot flashes were obtained using this device. The digital hot flash phenomenology diary is recommended for future ambulatory studies of hot flashes as a prospective measure of the hot flash experience. PMID:27404030

Measuring hot flash phenomenonology using ambulatory prospective digital diaries.

PubMed

Fisher, William I; Thurston, Rebecca C

2016-11-01

This study provides the description, protocol, and results from a novel prospective ambulatory digital hot flash phenomenon diary. This study included 152 midlife women with daily hot flashes who completed an ambulatory electronic hot flash diary continuously for the waking hours of three consecutive days. In this diary, women recorded their hot flashes and accompanying characteristics and associations as the hot flashes occurred. Self-reported hot flash severity on the digital diaries indicated that the majority of hot flashes were rated as mild (41.3%) or moderate (43.7%). Severe (13.1%) and very severe (1.8%) hot flashes were less common. Hot flash bother ratings were rated as mild (43%), or moderate (33.5%), with fewer hot flashes reported bothersome (17.5%) or very bothersome (6%). The majority of hot flashes were reported as occurring on the face (78.9%), neck (74.7%), and chest (61.3%). Of all reported hot flashes, 32% occurred concurrently with prickly skin, 7% with anxiety, and 5% with nausea. A novel finding from the study was that 38% of hot flashes were accompanied by a premonitory aura. A prospective electronic digital hot flash diary allows for a more precise quantitation of hot flashes while overcoming many of the limitations of commonly used retrospective questionnaires and paper diaries. Unique insights into the phenomenology, loci, and associated characteristics of hot flashes were obtained using this device. The digital hot flash phenomenology diary is recommended for future ambulatory studies of hot flashes as a prospective measure of the hot flash experience.

Time to Talk: 4 Things to Know about Menopausal Symptoms and Complementary Health Practices

MedlinePlus

... menopausal symptoms: Mind and body practices such as hypnosis, mindfulness meditation, and tai chi may help improve ... joint pain. There is also some evidence that hypnotherapy may help women manage hot flashes. Many natural ...

Summer Roof Maintenance.

ERIC Educational Resources Information Center

Liscum, Curtis L.

1999-01-01

Presents the items to review in roofing maintenance to prepare for the impact of summer, including checking drainage, roof-field surface and membrane, flashings, sheet metal, and rooftop equipment, such as skylights and penthouses. A list of roofing facts facility managers should know are highlighted. (GR)

Reconstructing the 2015 Flash Flood event of Salgar Colombia, The Case of a Poor Gauged Basin

NASA Astrophysics Data System (ADS)

Velasquez, N.; Zapata, E.; Hoyos Ortiz, C. D.; Velez, J. I.

2017-12-01

Flash floods events associated with severe precipitation events are highly destructive, often resulting in significant human and economic losses. Due to their nature, flash floods trend to occur in medium to small basins located within complex high mountainous regions. In the Colombian Andean region these basins are very common, with the aggravating factor that the vulnerability is considerably high as some important human settlements are located within these basins, frequently occupating flood plains and other flash-flood prone areas. During the dawn of May 18 of 2015 two severe rainfall events generated a flash flood event in the municipality ofSalgar, La Liboriana basin, locatedin the northwestern Colombian Andes, resulting in more than 100 human casualties and significant economic losses. The present work is a reconstruction of the hydrological processes that took place before and during the Liboriana flash flood event, analyzed as a case of poorly gauged basin.The event conditions where recreated based on radar retrievals and a hydrological distributed model, linked with a proposed 1D hydraulic model and simple shallow landslide model. Results suggest that the flash flood event was caused by the occurrence of two successive severe convective events over the same basin, with an important modulation associated with soil characteristics and water storage.Despite of its simplicity, the proposed hydraulic model achieves a good representation of the flooded area during the event, with limitations due to the adopted spatial scale (12.7 meters, from ALOS PALSAR images). Observed landslides were obtained from satellite images; for this case the model simulates skillfully the landslide occurrence regions with small differences in the exact locations.To understand this case, radar data shows to be key due to specific convective cores location and rainfall intensity estimation.In mountainous regions, there exists a significant number of settlements with similar vulnerability and with the same gauging conditions, the use of low-cost modelling strategy could represent a good risk management tool in these regions with low planning capabilities.

A class Hierarchical, object-oriented approach to virtual memory management

NASA Technical Reports Server (NTRS)

Russo, Vincent F.; Campbell, Roy H.; Johnston, Gary M.

1989-01-01

The Choices family of operating systems exploits class hierarchies and object-oriented programming to facilitate the construction of customized operating systems for shared memory and networked multiprocessors. The software is being used in the Tapestry laboratory to study the performance of algorithms, mechanisms, and policies for parallel systems. Described here are the architectural design and class hierarchy of the Choices virtual memory management system. The software and hardware mechanisms and policies of a virtual memory system implement a memory hierarchy that exploits the trade-off between response times and storage capacities. In Choices, the notion of a memory hierarchy is captured by abstract classes. Concrete subclasses of those abstractions implement a virtual address space, segmentation, paging, physical memory management, secondary storage, and remote (that is, networked) storage. Captured in the notion of a memory hierarchy are classes that represent memory objects. These classes provide a storage mechanism that contains encapsulated data and have methods to read or write the memory object. Each of these classes provides specializations to represent the memory hierarchy.

Flash Flood Risk Perception in an Italian Alpine Region. From Research into Adaptive Strategies.

NASA Astrophysics Data System (ADS)

Scolobig, A.; de Marchi, B.; Borga, M.

2009-04-01

Flash floods are characterised by short lead times and high levels of uncertainty. Adaptive strategies to face them need to take into account not only the physical characteristics of the hydro-geological phenomena, but also peoples' risk perceptions, attitudes and behaviours in case of an emergency. It is quite obvious that a precondition for an effective adaptation, e.g. in the case of a warning, is the awareness of being endangered. At the same time the perceptions of those at risk and their likely actions inform hazard warning strategies and recovery programmes following such events. Usually low risk awareness or "wrong perceptions" of the residents are considered among the causes of an inadequate preparedness or response to flash floods as well as a symptom of a scarce self-protection culture. In this paper we will focus on flood risk perception and on how research on this topic may contribute to design adaptive strategies and give inputs to flood policy decisions. We will report on a flood risk perception study of the population residing in four villages in an Italian Alpine Region (Trentino Alto-Adige), carried out between October 2005 and January 2006. A total of 400 standardised questionnaires were submitted to local residents by face to face interviews. The surveys were preceded by focus groups with officers from agencies in charge of flood risk management and semi-structured and in-depth interviews with policy, scientific and technical experts. Survey results indicated that people are not so worried about hydro-geological phenomena, and think that their community is more endangered than themselves. The knowledge of the territory and danger sources, the unpredictability of flash floods and the feeling of safety induced by structural devices are the main elements which make the difference in shaping residents' perceptions. The study also demonstrated a widespread lack of adoption of preparatory measures among residents, together with a general low evaluation of individual preparedness to face the events. At the same time there is a widespread trust in officials dealing with risk and emergency management, which confirms a general trend in delegating responsibility for safety to the agencies in charge. It is clear from the research findings that the problem is not only a lack of risk awareness and that flash flood risk perceptions are socially constructed in the sense that norms and values, as well as belief systems, influence and possibly define them. Several factors intervene in this process and most of them are highly context dependent. Therefore we underline the importance of understanding the local contexts and engaging with local perspectives on risk in the design of adaptive strategies. Taking these perspectives seriously into account is a prerequisite for the inclusion of those at risk in awareness raising processes, in developing and delivering strategies and in planning flood management, as required also by the European Floods Directive (EU 2007), which foresees "the active involvement of interested parties in the production, review and updating of the flood risk management plans ..." (Article 10). We also underline that a major effort in understanding how risk perception research can inform adaptive strategies is still needed to improve individual capability to positively face future flash flood emergencies.

Materials and other needs for advanced phase change memory (Presentation Recording)

NASA Astrophysics Data System (ADS)

Sosa, Norma E.

2015-09-01

Phase change memory (PCM), with its long history, may now hold its brightest promise to date. This bright future is being fueled by the "push" from big data. PCM is a non-volatile memory technology used to create solid-state random access memory devices that operate based the resistance properties of materials. Employing the electrical resistance differences-as opposed to differences in charge stored-between the amorphous and crystalline phases of the material, PCM can store bits, namely one's and zero's. Indeed, owing to the method of storage, PCM can in fact be designed to hold multiple bits thus leading to a high-density technology twice the storage density and less than half the cost of DRAM, the main kind found in typical personal computers. It has been long known that PCM can fill a need gap that spans 3 decades in performance from DRAM to solid state drive (NAND Flash). Furthermore, PCM devices can lead to performance and reliability improvements essential to enabling significant steps forward to supporting big data centric computing. This talk will focus on the science and challenges of aggressive scaling to realize the density needed, how this scaling challenge is intertwined with materials needs for endurance into the giga-cycles, and the associated forefront research aiming to realizing multi-level functionality into these nanoscale programmable resistor devices.

Prospective memory in schizophrenia: Relationship to medication management skills, neurocognition and symptoms in individuals with schizophrenia

PubMed Central

Raskin, S.; Maye, J.; Rogers, A.; Correll, D.; Zamroziewicz, M.; Kurtz, M.

2014-01-01

Objective Impaired adherence to medication regimens is a serious concern for individuals with schizophrenia linked to relapse and poorer outcomes. One possible reason for poor adherence to medication is poor ability to remember future intentions, labeled prospective memory skills. It has been demonstrated in several studies that individuals with schizophrenia have impairments in prospective memory that are linked to everyday life skills. However, there have been no studies, to our knowledge, examining the relationship of a clinical measure of prospective memory to medication management skills, a key element of successful adherence. Methods In this study 41 individuals with schizophrenia and 25 healthy adults were administered a standardized test battery that included measures of prospective memory, medication management skills, neurocognition and symptoms. Results Individuals with schizophrenia demonstrated impairments in prospective memory (both time and event-based) relative to healthy controls. Performance on the test of prospective memory was correlated with the standardized measure of medication management in individuals with schizophrenia. Moreover, the test of prospective memory predicted skills in medication adherence even after measures of neurocognition were accounted for. Conclusions This suggests that prospective memory may play a key role in medication management skills and thus should be a target of cognitive remediation programs. PMID:24188118

Radiation-Hardened Solid-State Drive

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.

2010-01-01

A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

Daily Physical Activity and Hot Flashes in the Study of Women's Health Across the Nation FLASHES Study

PubMed Central

Gibson, Carolyn; Matthews, Karen; Thurston, Rebecca

2014-01-01

Objective To examine the role of physical activity in menopausal hot flashes. Competing models conceptualize physical activity as a risk or protective factor for hot flashes. Few studies have examined this relationship prospectively using physiologic measures of hot flashes and physical activity. Design Over two 48 hour-periods, 51 participants wore a physiologic hot flash monitor and activity monitor, and reported their hot flashes in an electronic diary. Physiologic hot flashes, reported hot flashes and reported hot flashes without physiological corroboration were related to activity changes using hierarchical generalized linear modeling, adjusting for potential confounders. Setting Community. Patients Midlife women. Interventions None. Main Outcome Measures Physiologically-detected hot flashes and reported hot flashes with and without physiologic corroboration. Results Hot flash reports without physiologic corroboration were more likely after activity increases (OR 1.04, 95% CI: 1.00-1.10, p=.01), particularly among women with higher levels of depressive symptoms (interaction p=.02). No other types of hot flashes were related to physical activity. Conclusion Acute increases in physical activity were associated with increased reporting of hot flashes lacking physiologic corroboration, particularly among women with depressive symptoms. Clinicians should consider the role of symptom perception and reporting in relations between physical activity and hot flashes. PMID:24491454

Adaptive P300 based control system

PubMed Central

Jin, Jing; Allison, Brendan Z.; Sellers, Eric W.; Brunner, Clemens; Horki, Petar; Wang, Xingyu; Neuper, Christa

2015-01-01

An adaptive P300 brain-computer interface (BCI) using a 12 × 7 matrix explored new paradigms to improve bit rate and accuracy. During online use, the system adaptively selects the number of flashes to average. Five different flash patterns were tested. The 19-flash paradigm represents the typical row/column presentation (i.e., 12 columns and 7 rows). The 9- and 14-flash A & B paradigms present all items of the 12 × 7 matrix three times using either nine or 14 flashes (instead of 19), decreasing the amount of time to present stimuli. Compared to 9-flash A, 9-flash B decreased the likelihood that neighboring items would flash when the target was not flashing, thereby reducing interference from items adjacent to targets. 14-flash A also reduced adjacent item interference and 14-flash B additionally eliminated successive (double) flashes of the same item. Results showed that accuracy and bit rate of the adaptive system were higher than the non-adaptive system. In addition, 9- and 14-flash B produced significantly higher performance than their respective A conditions. The results also show the trend that the 14-flash B paradigm was better than the 19-flash pattern for naïve users. PMID:21474877

Evaluation of Cholinergic Deficiency in Preclinical Alzheimer's Disease Using Pupillometry

PubMed Central

Robinson, Liam; Rowe, Christopher C.; Ames, David; Masters, Colin L.; Taddei, Kevin; Rainey-Smith, Stephanie R.; Martins, Ralph N.; Kanagasingam, Yogesan

2017-01-01

Cortical cholinergic deficiency is prominent in Alzheimer's disease (AD), and published findings of diminished pupil flash response in AD suggest that this deficiency may extend to the visual cortical areas and anterior eye. Pupillometry is a low-cost, noninvasive technique that may be useful for monitoring cholinergic deficits which generally lead to memory and cognitive disorders. The aim of the study was to evaluate pupillometry for early detection of AD by comparing the pupil flash response (PFR) in AD (N = 14) and cognitively normal healthy control (HC, N = 115) participants, with the HC group stratified according to high (N = 38) and low (N = 77) neocortical amyloid burden (NAB). Constriction phase PFR parameters were significantly reduced in AD compared to HC (maximum acceleration p < 0.05, maximum velocity p < 0.0005, average velocity p < 0.005, and constriction amplitude p < 0.00005). The high-NAB HC subgroup had reduced PFR response cross-sectionally, and also a greater decline longitudinally, compared to the low-NAB subgroup, suggesting changes to pupil response in preclinical AD. The results suggest that PFR changes may occur in the preclinical phase of AD. Hence, pupillometry has a potential as an adjunct for noninvasive, cost-effective screening for preclinical AD. PMID:28894607

Adverse Effects of Induced Hot Flashes on Objectively Recorded and Subjectively Reported Sleep: Results of a Gonadotropin-Releasing Hormone Agonist Experimental Protocol

PubMed Central

Joffe, Hadine; White, David P.; Crawford, Sybil L.; McCurnin, Kristin E.; Economou, Nicole; Connors, Stephanie; Hall, Janet E.

2013-01-01

Objectives The impact of hot flashes on sleep is of great clinical interest, but results are inconsistent, especially when both hot flashes and sleep are measured objectively. Using objective and subjective measurements, we examined the impact of hot flashes on sleep by inducing hot flashes with a gonadotropin-releasing hormone agonist (GnRHa). Methods The GnRHa leuprolide was administered to 20 healthy premenopausal volunteers without hot flashes or sleep disturbances. Induced hot flashes were assessed objectively (skin-conductance monitor) and subjectively (daily diary) during one-month follow-up. Changes from baseline in objective (actigraphy) and subjective sleep quality (Pittsburgh Sleep Quality Index [PSQI]) were compared between women who did and did not develop objective hot flashes, and, in parallel analyses, subjective hot flashes. Results New-onset hot flashes were recorded in 14 (70%) and reported by 14 (70%) women (80% concordance). Estradiol was universally suppressed. Objective sleep efficiency worsened in women with objective hot flashes and improved in women without objective hot flashes (median decrease 2.6%, increase 4.2%, p=0.005). Subjective sleep quality worsened more in those with than without subjective hot flashes (median increase PSQI 2.5 vs. 1.0, p=0.03). Objective hot flashes were not associated with subjective sleep quality, nor were subjective symptoms linked to objective sleep measures. Conclusions This experimental model of induced hot flashes demonstrates a causal relationship between hot flashes and poor sleep quality. Objective hot flashes result in worse objective sleep efficiency, while subjective hot flashes worsen perceived sleep quality. PMID:23481119

Implementation of a Landscape Lighting System to Display Images

NASA Astrophysics Data System (ADS)

Sun, Gi-Ju; Cho, Sung-Jae; Kim, Chang-Beom; Moon, Cheol-Hong

The system implemented in this study consists of a PC, MASTER, SLAVEs and MODULEs. The PC sets the various landscape lighting displays, and the image files can be sent to the MASTER through a virtual serial port connected to the USB (Universal Serial Bus). The MASTER sends a sync signal to the SLAVE. The SLAVE uses the signal received from the MASTER and the landscape lighting display pattern. The video file is saved in the NAND Flash memory and the R, G, B signals are separated using the self-made display signal and sent to the MODULE so that it can display the image.

A portable ECG monitoring device with Bluetooth and Holter capabilities for telemedicine applications.

PubMed

Lucani, Daniel; Cataldo, Giancarlos; Cruz, Julio; Villegas, Guillermo; Wong, Sara

2006-01-01

A prototype of a portable ECG-monitoring device has been developed for clinical and non-clinical environments as part of a telemedicine system to provide remote and continuous surveillance of patients. The device can acquire, store and/or transmit ECG signals to computer-based platforms or specially configured access points (AP) with Intranet/Internet capabilities in order to reach remote monitoring stations. Acquired data can be stored in a flash memory card in FAT16 format for later recovery, or transmitted via Bluetooth or USB to a local station or AP. This data acquisition module (DAM) operates in two modes: Holter and on-line transmission.

Reconfigurable Fault Tolerance for FPGAs

NASA Technical Reports Server (NTRS)

Shuler, Robert, Jr.

2010-01-01

The invention allows a field-programmable gate array (FPGA) or similar device to be efficiently reconfigured in whole or in part to provide higher capacity, non-redundant operation. The redundant device consists of functional units such as adders or multipliers, configuration memory for the functional units, a programmable routing method, configuration memory for the routing method, and various other features such as block RAM, I/O (random access memory, input/output) capability, dedicated carry logic, etc. The redundant device has three identical sets of functional units and routing resources and majority voters that correct errors. The configuration memory may or may not be redundant, depending on need. For example, SRAM-based FPGAs will need some type of radiation-tolerant configuration memory, or they will need triple-redundant configuration memory. Flash or anti-fuse devices will generally not need redundant configuration memory. Some means of loading and verifying the configuration memory is also required. These are all components of the pre-existing redundant FPGA. This innovation modifies the voter to accept a MODE input, which specifies whether ordinary voting is to occur, or if redundancy is to be split. Generally, additional routing resources will also be required to pass data between sections of the device created by splitting the redundancy. In redundancy mode, the voters produce an output corresponding to the two inputs that agree, in the usual fashion. In the split mode, the voters select just one input and convey this to the output, ignoring the other inputs. In a dual-redundant system (as opposed to triple-redundant), instead of a voter, there is some means to latch or gate a state update only when both inputs agree. In this case, the invention would require modification of the latch or gate so that it would operate normally in redundant mode, and would separately latch or gate the inputs in non-redundant mode.

A PDA-based electrocardiogram/blood pressure telemonitor for telemedicine.

PubMed

Bolanos, Marcos; Nazeran, Homayoun; Gonzalez, Izzac; Parra, Ricardo; Martinez, Christopher

2004-01-01

An electrocardiogram (ECG) / blood pressure (BP) telemonitor consisting of comprehensive integration of various electrical engineering concepts, devices, and methods was developed. This personal digital assistant-based (PDAbased) system focused on integration of biopotential amplifiers, photoplethysmographic measurement of blood pressure, microcontroller devices, programming methods, wireless transmission, signal filtering and analysis, interfacing, and long term memory devices (24 hours) to develop a state-of-the-art ECG/BP telemonitor. These instrumentation modules were developed and tested to realize a complete and compact system that could be deployed to assist in telemedicine applications and heart rate variability studies. The specific objective of this device was to facilitate the long term monitoring and recording of ECG and blood pressure signals. This device was able to acquire ECG/BP waveforms, transmit them wirelessly to a PDA, save them onto a compact flash memory, and display them on the LCD screen of the PDA. It was also capable of calculating the heart rate (HR) in beats per minute, and providing systolic and diastolic blood pressure values.

Transition from Target to Gaze Coding in Primate Frontal Eye Field during Memory Delay and Memory–Motor Transformation123

PubMed Central

Sajad, Amirsaman; Sadeh, Morteza; Yan, Xiaogang; Wang, Hongying

2016-01-01

Abstract The frontal eye fields (FEFs) participate in both working memory and sensorimotor transformations for saccades, but their role in integrating these functions through time remains unclear. Here, we tracked FEF spatial codes through time using a novel analytic method applied to the classic memory-delay saccade task. Three-dimensional recordings of head-unrestrained gaze shifts were made in two monkeys trained to make gaze shifts toward briefly flashed targets after a variable delay (450-1500 ms). A preliminary analysis of visual and motor response fields in 74 FEF neurons eliminated most potential models for spatial coding at the neuron population level, as in our previous study (Sajad et al., 2015). We then focused on the spatiotemporal transition from an eye-centered target code (T; preferred in the visual response) to an eye-centered intended gaze position code (G; preferred in the movement response) during the memory delay interval. We treated neural population codes as a continuous spatiotemporal variable by dividing the space spanning T and G into intermediate T–G models and dividing the task into discrete steps through time. We found that FEF delay activity, especially in visuomovement cells, progressively transitions from T through intermediate T–G codes that approach, but do not reach, G. This was followed by a final discrete transition from these intermediate T–G delay codes to a “pure” G code in movement cells without delay activity. These results demonstrate that FEF activity undergoes a series of sensory–memory–motor transformations, including a dynamically evolving spatial memory signal and an imperfect memory-to-motor transformation. PMID:27092335

Menopausal hot flashes: Randomness or rhythmicity

NASA Astrophysics Data System (ADS)

Kronenberg, Fredi

1991-10-01

Menopausal hot flashes are episodes of flushing, increased heart rate, skin blood flow and skin temperature, and a sensation of heat. The thermoregulatory and cardiovascular concomitants of hot flashes are associated with peaks in the levels of various hormones and neurotransmitters in the peripheral circulation. Although hot flashes affect about 75% of women, and are the primary reason that women at menopause seek medical attention, the mechanism of hot flashes is still not understood. Hot flashes vary in frequency and intensity both within and between individuals, and have been thought of as occurring randomly. Yet, some women report that their hot flashes are worse at a particular time of day or year. Initial examination of subjects' recordings of their hot flashes showed diurnal patterns of hot flash occurrence. There also seems to be a diurnal rhythm of hot flash intensity. Continuous physiological monitoring of hot flashes is facilitating the analysis of these patterns, which is revealing circadian and ultradian periodicities. The occurrence of hot flashes can be modulated by external and internal factors, including ambient temperature and fever. Rhythms of thermoregulatory and endocrine functions also may influence hot flash patterns. Examination of the interrelationships between the various systems of the body involved in hot flashes, and a multidisciplinary approach to the analysis of hot flash patterns, will aid our understanding of this complex phenomenon.

Managing Chemotherapy Side Effects: Sexual and Fertility Changes in Women

MedlinePlus

... I could take my sweater off during a hot flash.” “I used a cream to help with vaginal dryness, and I used a lubricant to feel more comfortable when I had sex.” Ask your nurse what products or brands can ...

Ensemble: a web-based system for psychology survey and experiment management.

PubMed

Tomic, Stefan T; Janata, Petr

2007-08-01

We provide a description of Ensemble, a suite of Web-integrated modules for managing and analyzing data associated with psychology experiments in a small research lab. The system delivers interfaces via a Web browser for creating and presenting simple surveys without the need to author Web pages and with little or no programming effort. The surveys may be extended by selecting and presenting auditory and/or visual stimuli with MATLAB and Flash to enable a wide range of psychophysical and cognitive experiments which do not require the recording of precise reaction times. Additionally, one is provided with the ability to administer and present experiments remotely. The software technologies employed by the various modules of Ensemble are MySQL, PHP, MATLAB, and Flash. The code for Ensemble is open source and available to the public, so that its functions can be readily extended by users. We describe the architecture of the system, the functionality of each module, and provide basic examples of the interfaces.

A comparative assessment of decision trees algorithms for flash flood susceptibility modeling at Haraz watershed, northern Iran.

PubMed

Khosravi, Khabat; Pham, Binh Thai; Chapi, Kamran; Shirzadi, Ataollah; Shahabi, Himan; Revhaug, Inge; Prakash, Indra; Tien Bui, Dieu

2018-06-15

Floods are one of the most damaging natural hazards causing huge loss of property, infrastructure and lives. Prediction of occurrence of flash flood locations is very difficult due to sudden change in climatic condition and manmade factors. However, prior identification of flood susceptible areas can be done with the help of machine learning techniques for proper timely management of flood hazards. In this study, we tested four decision trees based machine learning models namely Logistic Model Trees (LMT), Reduced Error Pruning Trees (REPT), Naïve Bayes Trees (NBT), and Alternating Decision Trees (ADT) for flash flood susceptibility mapping at the Haraz Watershed in the northern part of Iran. For this, a spatial database was constructed with 201 present and past flood locations and eleven flood-influencing factors namely ground slope, altitude, curvature, Stream Power Index (SPI), Topographic Wetness Index (TWI), land use, rainfall, river density, distance from river, lithology, and Normalized Difference Vegetation Index (NDVI). Statistical evaluation measures, the Receiver Operating Characteristic (ROC) curve, and Freidman and Wilcoxon signed-rank tests were used to validate and compare the prediction capability of the models. Results show that the ADT model has the highest prediction capability for flash flood susceptibility assessment, followed by the NBT, the LMT, and the REPT, respectively. These techniques have proven successful in quickly determining flood susceptible areas. Copyright © 2018 Elsevier B.V. All rights reserved.

Small-scale (flash) flood early warning in the light of operational requirements: opportunities and limits with regard to user demands, driving data, and hydrologic modeling techniques

NASA Astrophysics Data System (ADS)

Philipp, Andy; Kerl, Florian; Büttner, Uwe; Metzkes, Christine; Singer, Thomas; Wagner, Michael; Schütze, Niels

2016-05-01

In recent years, the Free State of Saxony (Eastern Germany) was repeatedly hit by both extensive riverine flooding, as well as flash flood events, emerging foremost from convective heavy rainfall. Especially after a couple of small-scale, yet disastrous events in 2010, preconditions, drivers, and methods for deriving flash flood related early warning products are investigated. This is to clarify the feasibility and the limits of envisaged early warning procedures for small catchments, hit by flashy heavy rain events. Early warning about potentially flash flood prone situations (i.e., with a suitable lead time with regard to required reaction-time needs of the stakeholders involved in flood risk management) needs to take into account not only hydrological, but also meteorological, as well as communication issues. Therefore, we propose a threefold methodology to identify potential benefits and limitations in a real-world warning/reaction context. First, the user demands (with respect to desired/required warning products, preparation times, etc.) are investigated. Second, focusing on small catchments of some hundred square kilometers, two quantitative precipitation forecasts are verified. Third, considering the user needs, as well as the input parameter uncertainty (i.e., foremost emerging from an uncertain QPF), a feasible, yet robust hydrological modeling approach is proposed on the basis of pilot studies, employing deterministic, data-driven, and simple scoring methods.

Energy-aware Thread and Data Management in Heterogeneous Multi-core, Multi-memory Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Chun-Yi

By 2004, microprocessor design focused on multicore scaling—increasing the number of cores per die in each generation—as the primary strategy for improving performance. These multicore processors typically equip multiple memory subsystems to improve data throughput. In addition, these systems employ heterogeneous processors such as GPUs and heterogeneous memories like non-volatile memory to improve performance, capacity, and energy efficiency. With the increasing volume of hardware resources and system complexity caused by heterogeneity, future systems will require intelligent ways to manage hardware resources. Early research to improve performance and energy efficiency on heterogeneous, multi-core, multi-memory systems focused on tuning a single primitivemore » or at best a few primitives in the systems. The key limitation of past efforts is their lack of a holistic approach to resource management that balances the tradeoff between performance and energy consumption. In addition, the shift from simple, homogeneous systems to these heterogeneous, multicore, multi-memory systems requires in-depth understanding of efficient resource management for scalable execution, including new models that capture the interchange between performance and energy, smarter resource management strategies, and novel low-level performance/energy tuning primitives and runtime systems. Tuning an application to control available resources efficiently has become a daunting challenge; managing resources in automation is still a dark art since the tradeoffs among programming, energy, and performance remain insufficiently understood. In this dissertation, I have developed theories, models, and resource management techniques to enable energy-efficient execution of parallel applications through thread and data management in these heterogeneous multi-core, multi-memory systems. I study the effect of dynamic concurrent throttling on the performance and energy of multi-core, non-uniform memory access (NUMA) systems. I use critical path analysis to quantify memory contention in the NUMA memory system and determine thread mappings. In addition, I implement a runtime system that combines concurrent throttling and a novel thread mapping algorithm to manage thread resources and improve energy efficient execution in multi-core, NUMA systems.« less

Computer memory management system

DOEpatents

Kirk, III, Whitson John

2002-01-01

A computer memory management system utilizing a memory structure system of "intelligent" pointers in which information related to the use status of the memory structure is designed into the pointer. Through this pointer system, The present invention provides essentially automatic memory management (often referred to as garbage collection) by allowing relationships between objects to have definite memory management behavior by use of coding protocol which describes when relationships should be maintained and when the relationships should be broken. In one aspect, the present invention system allows automatic breaking of strong links to facilitate object garbage collection, coupled with relationship adjectives which define deletion of associated objects. In another aspect, The present invention includes simple-to-use infinite undo/redo functionality in that it has the capability, through a simple function call, to undo all of the changes made to a data model since the previous `valid state` was noted.

Forecasts, warnings and social response to flash floods: Is temporality a major problem? The case of the September 2005 flash flood in the Gard region (France)

NASA Astrophysics Data System (ADS)

Lutoff, C.; Anquetin, S.; Ruin, I.; Chassande, M.

2009-09-01

Flash floods are complex phenomena. The atmospheric and hydrological generating mechanisms of the phenomenon are not completely understood, leading to highly uncertain forecasts of and warnings for these events. On the other hand warning and crisis response to such violent and fast events is not a straightforward process. In both the social and physical aspect of the problem, space and time scales involved either in hydrometeorology, human behavior and social organizations sciences are of crucial importance. Forecasters, emergency managers, mayors, school superintendents, school transportation managers, first responders and road users, all have different time and space frameworks that they use to take emergency decision for themselves, their group or community. The integration of space and time scales of both the phenomenon and human activities is therefore a necessity to better deal with questions as forecasting lead-time and warning efficiency. The aim of this oral presentation is to focus on the spatio-temporal aspects of flash floods to improve our understanding of the event dynamic compared to the different scales of the social response. The authors propose a framework of analysis to compare the temporality of: i) the forecasts (from Méteo-France and from EFAS (Thielen et al., 2008)), ii) the meteorological and hydrological parameters, iii) the social response at different scales. The September 2005 event is particularly interesting for such analysis. The rainfall episode lasted nearly a week with two distinct phases separated by low intensity precipitations. Therefore the Méteo-France vigilance bulletin where somehow disconnected from the local flood’s impacts. Our analysis focuses on the timings of different types of local response, including the delicate issue of school transportation, in regard to the forecasts and the actual dynamic of the event.

An Analysis of Total Lightning Flash Rates Over Florida

NASA Astrophysics Data System (ADS)

Mazzetti, Thomas O.; Fuelberg, Henry E.

2017-12-01

Although Florida is known as the "Sunshine State", it also contains the greatest lightning flash densities in the United States. Flash density has received considerable attention in the literature, but lightning flash rate has received much less attention. We use data from the Earth Networks Total Lightning Network (ENTLN) to produce a 5 year (2010-2014) set of statistics regarding total flash rates over Florida and adjacent regions. Instead of tracking individual storms, we superimpose a 0.2° × 0.2° grid over the study region and count both cloud-to-ground (CG) and in-cloud (IC) flashes over 5 min intervals. Results show that the distribution of total flash rates is highly skewed toward small values, whereas the greatest rate is 185 flashes min-1. Greatest average annual flash rates ( 3 flashes min-1) are located near Orlando. The southernmost peninsula, North Florida, and the Florida Panhandle exhibit smaller average annual flash rates ( 1.5 flashes min-1). Large flash rates > 100 flashes min-1 can occur during any season, at any time during the 24 h period, and at any location within the domain. However, they are most likely during the afternoon and early evening in East Central Florida during the spring and summer months.

Targeting an efficient target-to-target interval for P300 speller brain–computer interfaces

PubMed Central

Sellers, Eric W.; Wang, Xingyu

2013-01-01

Longer target-to-target intervals (TTI) produce greater P300 event-related potential amplitude, which can increase brain–computer interface (BCI) classification accuracy and decrease the number of flashes needed for accurate character classification. However, longer TTIs requires more time for each trial, which will decrease the information transfer rate of BCI. In this paper, a P300 BCI using a 7 × 12 matrix explored new flash patterns (16-, 18- and 21-flash pattern) with different TTIs to assess the effects of TTI on P300 BCI performance. The new flash patterns were designed to minimize TTI, decrease repetition blindness, and examine the temporal relationship between each flash of a given stimulus by placing a minimum of one (16-flash pattern), two (18-flash pattern), or three (21-flash pattern) non-target flashes between each target flashes. Online results showed that the 16-flash pattern yielded the lowest classification accuracy among the three patterns. The results also showed that the 18-flash pattern provides a significantly higher information transfer rate (ITR) than the 21-flash pattern; both patterns provide high ITR and high accuracy for all subjects. PMID:22350331

Value of subjective visual reduction in patients with acute-onset floaters and/or flashes.

PubMed

Hurst, Jonathan; Johnson, Davin; Law, Christine; Schweitzer, Kelly; Sharma, Sanjay

2015-08-01

To quantify the association between subjective visual reduction (SVR) and retinal pathology in patients with acute-onset monocular floaters or flashes, or both. Prospective cohorts study involving all new patients referred for acute-onset floaters or flashes, or both, to a tertiary care emergency eye clinic in Kingston, Ontario, between July 1, 2011, and June 29, 2012 (n = 333). All patients were evaluated for the presence of SVR in a standardized fashion, as well as other known risk factors for retina pathology including a family history of retinal tear or retinal detachment, a personal history of retinal tear or detachment, high myopia, and ocular trauma. Our major outcome was urgent retinal pathology, defined as retina pathology requiring a same-day referral to a retina specialist for evaluation, management, or both. SVR was strongly associated with retinal pathology (likelihood ratio 7.9, 95% CI 5.2-12.1). Patients with SVR are at increased risk for urgent retinal pathology and should be triaged for urgent ophthalmologic examination. Copyright © 2015 Canadian Ophthalmological Society. Published by Elsevier Inc. All rights reserved.

Cognitive Rehabilitation of Episodic Memory Disorders: From Theory to Practice

PubMed Central

Ptak, Radek; der Linden, Martial Van; Schnider, Armin

2010-01-01

Memory disorders are among the most frequent and most debilitating cognitive impairments following acquired brain damage. Cognitive remediation strategies attempt to restore lost memory capacity, provide compensatory techniques or teach the use of external memory aids. Memory rehabilitation has strongly been influenced by memory theory, and the interaction between both has stimulated the development of techniques such as spaced retrieval, vanishing cues or errorless learning. These techniques partly rely on implicit memory and therefore enable even patients with dense amnesia to acquire new information. However, knowledge acquired in this way is often strongly domain-specific and inflexible. In addition, individual patients with amnesia respond differently to distinct interventions. The factors underlying these differences have not yet been identified. Behavioral management of memory failures therefore often relies on a careful description of environmental factors and measurement of associated behavioral disorders such as unawareness of memory failures. The current evidence suggests that patients with less severe disorders benefit from self-management techniques and mnemonics whereas rehabilitation of severely amnesic patients should focus on behavior management, the transmission of domain-specific knowledge through implicit memory processes and the compensation for memory deficits with memory aids. PMID:20700383

Method and apparatus for managing access to a memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeBenedictis, Erik

A method and apparatus for managing access to a memory of a computing system. A controller transforms a plurality of operations that represent a computing job into an operational memory layout that reduces a size of a selected portion of the memory that needs to be accessed to perform the computing job. The controller stores the operational memory layout in a plurality of memory cells within the selected portion of the memory. The controller controls a sequence by which a processor in the computing system accesses the memory to perform the computing job using the operational memory layout. The operationalmore » memory layout reduces an amount of energy consumed by the processor to perform the computing job.« less

Spatial-temporal characteristics of lightning flash size in a supercell storm

NASA Astrophysics Data System (ADS)

Zhang, Zhixiao; Zheng, Dong; Zhang, Yijun; Lu, Gaopeng

2017-11-01

The flash sizes of a supercell storm, in New Mexico on October 5, 2004, are studied using the observations from the New Mexico Lightning Mapping Array and the Albuquerque, New Mexico, Doppler radar (KABX). First, during the temporal evolution of the supercell, the mean flash size is anti-correlated with the flash rate, following a unary power function, with a correlation coefficient of - 0.87. In addition, the mean flash size is linearly correlated with the area of reflectivity > 30 dBZ at 5 km normalized by the flash rate, with a correlation coefficient of 0.88. Second, in the horizontal, flash size increases along the direction from the region near the convection zone to the adjacent forward anvil. The region of minimum flash size usually corresponds to the region of maximum flash initiation and extent density. The horizontal correspondence between the mean flash size and the flash extent density can also be fitted by a unary power function, and the correlation coefficient is > 0.5 in 50% of the radar volume scans. Furthermore, the quality of fit is positively correlated to the convective intensity. Third, in the vertical direction, the height of the maximum flash initiation density is close to the height of maximum flash extent density, but corresponds to the height where the mean flash size is relatively small. In the discussion, the distribution of the small and dense charge regions when and where convection is vigorous in the storm, is deduced to be responsible for the relationship that flash size is temporally and spatially anti-correlated with flash rate and density, and the convective intensity.

Clinical Use of Continuous Glucose Monitoring in Adults with Type 1 Diabetes.

PubMed

Slattery, David; Choudhary, Pratik

2017-05-01

With the emphasis on intensive management of type 1 diabetes, data from studies support frequent monitoring of glucose levels to improve glycemic control and reduce glucose variability, which can be related to an increase in macro and microvascular complications. However, few perform capillary blood glucose that frequently. There are currently two available alternatives that this review will discuss, continuous glucose monitoring (CGM) and flash glucose monitoring. CGM has become an important diagnostic and therapeutic option in optimizing diabetes management. CGM systems are now more accurate, smaller, and easier to use compared to original models. Randomized controlled trials (RCTs) have demonstrated that CGM can improve Hemoglobin A1c (HbA1C) and reduce glucose variability in both continuous subcutaneous insulin infusion and multiple daily injection users. When used in an automated "insulin-suspend" system, reduced frequency of hypoglycemia and shorter time spent in hypoglycemic range have been demonstrated. Despite the potential benefits CGM has to offer in clinical practice, concerns exist on the accuracy of these devices and patient compliance with therapy, which may prevent the true clinical benefit of CGM being achieved, as observed in RCTs. Flash glucose monitoring systems FreeStyle ® Libre™ (Abbott Diabetes Care, Alameda, CA) are as accurate as many CGM systems available and have the added benefit of being factory calibrated. Studies have shown that flash glucose monitoring systems are very well tolerated by patients and effectively reduce glucose variability, increasing time in range.

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Synoptic-scale atmospheric conditions associated with flash flooding in watersheds of the Catskill Mountains, New York, USA

NASA Astrophysics Data System (ADS)

Teale, N. G.; Quiring, S. M.

2015-12-01

Understanding flash flooding is important in unfiltered watersheds, such as portions of the New York City water supply system (NYCWSS), as water quality is degraded by turbidity associated with flooding. To further understand flash flooding in watersheds of the NYCWSS, synoptic-scale atmospheric conditions most frequently associated with flash flooding between 1987 and 2013 were examined. Flash floods were identified during this time period using USGS 15-minute discharge data at the Esopus Creek near Allaben, NY and Neversink River at Claryville, NY gauges. Overall, 25 flash floods were detected, occurring over 17 separate flash flood days. These flash flood days were compared to the days on which flash flood warnings encompassing the study area was issued by the National Weather Service. The success rate for which the flash flood warnings for Ulster County coincided with flash flood in the study watershed was 0.09, demonstrating the highly localized nature of flash flooding in the Catskill Mountain region. The synoptic-scale atmospheric patterns influencing the study area were characterized by a principal component analysis and k-means clustering of NCEP/NCAR 500 mb geopotential height reanalysis data. This procedure was executed in Spatial Synoptic Typer Tools 4.0. While 17 unique synoptic patterns were identified, only 3 types were strongly associated with flash flooding events. A strong southwesterly flow suggesting advection of moisture from the Atlantic Ocean and Gulf of Mexico is shown in composites of these 3 types. This multiscalar study thereby links flash flooding in the NYCWSS with synoptic-scale atmospheric circulation.Understanding flash flooding is important in unfiltered watersheds, such as portions of the New York City water supply system (NYCWSS), as water quality is degraded by turbidity associated with flooding. To further understand flash flooding in watersheds of the NYCWSS, synoptic-scale atmospheric conditions most frequently associated with flash flooding between 1987 and 2013 were examined. Flash floods were identified during this time period using USGS 15-minute discharge data at the Esopus Creek near Allaben, NY and Neversink River at Claryville, NY gauges. Overall, 25 flash floods were detected, occurring over 17 separate flash flood days. These flash flood days were compared to the days on which flash flood warnings encompassing the study area was issued by the National Weather Service. The success rate for which the flash flood warnings for Ulster County coincided with flash flood in the study watershed was 0.09, demonstrating the highly localized nature of flash flooding in the Catskill Mountain region. The synoptic-scale atmospheric patterns influencing the study area were characterized by a principal component analysis and k-means clustering of NCEP/NCAR 500 mb geopotential height reanalysis data. This procedure was executed in Spatial Synoptic Typer Tools 4.0. While 17 unique synoptic patterns were identified, only 3 types were strongly associated with flash flooding events. A strong southwesterly flow suggesting advection of moisture from the Atlantic Ocean and Gulf of Mexico is shown in composites of these 3 types. This multiscalar study thereby links flash flooding in the NYCWSS with synoptic-scale atmospheric circulation.

Physiologically assessed hot flashes and endothelial function among midlife women.

PubMed

Thurston, Rebecca C; Chang, Yuefang; Barinas-Mitchell, Emma; Jennings, J Richard; von Känel, Roland; Landsittel, Doug P; Matthews, Karen A

2017-08-01

Hot flashes are experienced by most midlife women. Emerging data indicate that they may be associated with endothelial dysfunction. No studies have tested whether hot flashes are associated with endothelial function using physiologic measures of hot flashes. We tested whether physiologically assessed hot flashes were associated with poorer endothelial function. We also considered whether age modified associations. Two hundred seventy-two nonsmoking women reporting either daily hot flashes or no hot flashes, aged 40 to 60 years, and free of clinical cardiovascular disease, underwent ambulatory physiologic hot flash and diary hot flash monitoring; a blood draw; and ultrasound measurement of brachial artery flow-mediated dilation to assess endothelial function. Associations between hot flashes and flow-mediated dilation were tested in linear regression models controlling for lumen diameter, demographics, cardiovascular disease risk factors, and estradiol. In multivariable models incorporating cardiovascular disease risk factors, significant interactions by age (P < 0.05) indicated that among the younger tertile of women in the sample (age 40-53 years), the presence of hot flashes (beta [standard error] = -2.07 [0.79], P = 0.01), and more frequent physiologic hot flashes (for each hot flash: beta [standard error] = -0.10 [0.05], P = 0.03, multivariable) were associated with lower flow-mediated dilation. Associations were not accounted for by estradiol. Associations were not observed among the older women (age 54-60 years) or for self-reported hot flash frequency, severity, or bother. Among the younger women, hot flashes explained more variance in flow-mediated dilation than standard cardiovascular disease risk factors or estradiol. Among younger midlife women, frequent hot flashes were associated with poorer endothelial function and may provide information about women's vascular status beyond cardiovascular disease risk factors and estradiol.

Menopausal Hot Flashes and Carotid Intima Media Thickness Among Midlife Women.

PubMed

Thurston, Rebecca C; Chang, Yuefang; Barinas-Mitchell, Emma; Jennings, J Richard; Landsittel, Doug P; Santoro, Nanette; von Känel, Roland; Matthews, Karen A

2016-12-01

There has been a longstanding interest in the role of menopause and its correlates in the development of cardiovascular disease (CVD) in women. Menopausal hot flashes are experienced by most midlife women; emerging data link hot flashes to CVD risk indicators. We tested whether hot flashes, measured via state-of-the-art physiologic methods, were associated with greater subclinical atherosclerosis as assessed by carotid ultrasound. We considered the role of CVD risk factors and estradiol concentrations in these associations. A total of 295 nonsmoking women free of clinical CVD underwent ambulatory physiologic hot flash assessments; a blood draw; and carotid ultrasound measurement of intima media thickness and plaque. Associations between hot flashes and subclinical atherosclerosis were tested in regression models controlling for CVD risk factors and estradiol. More frequent physiologic hot flashes were associated with higher carotid intima media thickness (for each additional hot flash: β [SE]=0.004 [0.001]; P=0.0001; reported hot flash: β [SE]=0.008 [0.002]; P=0.002, multivariable) and plaque (eg, for each additional hot flash, odds ratio [95% confidence interval] plaque index ≥2=1.07 [1.003-1.14]; P=0.04, relative to no plaque, multivariable] among women reporting daily hot flashes; associations were not accounted for by CVD risk factors or by estradiol. Among women reporting hot flashes, hot flashes accounted for more variance in intima media thickness than most CVD risk factors. Among women reporting daily hot flashes, frequent hot flashes may provide information about a woman's vascular status beyond standard CVD risk factors and estradiol. Frequent hot flashes may mark a vulnerable vascular phenotype among midlife women. © 2016 American Heart Association, Inc.

Menopausal Hot Flashes and Carotid Intima Media Thickness among Midlife Women

PubMed Central

Thurston, Rebecca C.; Chang, Yuefang; Barinas-Mitchell, Emma; Jennings, J. Richard; Landsittel, Doug P.; Santoro, Nanette; von Känel, Roland; Matthews, Karen A.

2016-01-01

Background and Purpose There has been a longstanding interest in the role of menopause and its correlates in the development of cardiovascular disease (CVD) in women. Menopausal hot flashes are experienced by most midlife women; emerging data link hot flashes to CVD risk indicators. We tested whether hot flashes, measured via state-of-the-art physiologic methods, were associated with greater subclinical atherosclerosis as assessed by carotid ultrasound. We considered the role of CVD risk factors and estradiol concentrations in these associations. Methods 295 nonsmoking women free of clinical CVD underwent ambulatory physiologic hot flash assessments; a blood draw; and carotid ultrasound measurement of IMT and plaque. Associations between hot flashes and subclinical atherosclerosis were tested in regression models controlling for CVD risk factors and estradiol. Results More frequent physiologic hot flashes were associated with higher carotid intima media thickness [IMT; for each additional hot flash: beta (standard error)=.004(.001), p=.0001; reported hot flash: beta (standard error)=.008(.002), p=.002, multivariable] and plaque [e.g., for each additional hot flash, odds ratio (95% confidence interval) plaque index ≥2=1.07(1.003–1.14, p=.04), relative to no plaque, multivariable] among women reporting daily hot flashes; associations were not accounted for by CVD risk factors or by estradiol. Among women reporting hot flashes, hot flashes accounted for more variance in IMT than most CVD risk factors. Conclusions Among women reporting daily hot flashes, frequent hot flashes may provide information about a woman’s vascular status beyond standard CVD risk factors and estradiol. Frequent hot flashes may mark a vulnerable vascular phenotype among midlife women. PMID:27834746

Karst flash floods: an example from the Dinaric karst (Croatia)

NASA Astrophysics Data System (ADS)

Bonacci, O.; Ljubenkov, I.; Roje-Bonacci, T.

2006-03-01

Flash floods constitute one of the deadliest and costliest natural disasters worldwide. This paper explains the karst flash flood phenomenon, which represents a special kind of flash flood. As the majority of flash floods karst flash floods are caused by intensive short-term precipitation in an area whose surface rarely exceeds a few square kilometres. The characteristics of all flash floods are their short duration, small areal extent, high flood peaks and rapid flows, and heavy loss of life and property. Karst flash floods have specific characteristics due to special conditions for water circulation, which exist in karst terrains. During karst flash floods a sudden rise of groundwater levels occurs, which causes the appearance of numerous, unexpected, abundant and temporary karst springs. This paper presents in detail an example of a karst flash flood in the Marina bay (Dinaric karst region of Croatia), which occurred in December 2004.

Multi- and unisensory visual flash illusions.

PubMed

Courtney, Jon R; Motes, Michael A; Hubbard, Timothy L

2007-01-01

The role of stimulus structure in multisensory and unisensory interactions was examined. When a flash (17 ms) was accompanied by multiple tones (each 7 ms, SOA < or =100 ms) multiple flashes were reported, and this effect has been suggested to reflect the role of stimulus continuity in multisensory interactions. In experiments 1 and 2 we examined if stimulus continuity would affect concurrently presented stimuli. When a relatively longer flash (317 ms) was accompanied by multiple tones (each 7 ms), observers reported perceiving multiple flashes. In experiment 3 we tested whether a flash presented near fixation would induce an illusory flash further in the periphery. One flash (17 ms) presented 5 degrees below fixation was reported as multiple flashes if presented with two flashes (each 17 ms, SOA =100 ms) 2 degrees above fixation. The extent to which these data support a phenomenological continuity principle and whether this principle applies to unisensory perception is discussed.

Air and Space Power Journal. Volume 18, Number 1, Spring 2004

DTIC Science & Technology

2004-01-01

throughput (coatings, etc.) Thermal management Integrated power , energy, and thermal management Target link Passive tracking and pointing Active...facet of the alternate-energy equa­ tion. In 2002, capacities of 3 MW of station­ ary power evolved but only to the point where it was economically...engine-performance requirements, but also its energy content is so high and flash point so low that it becomes the standard for auxiliary- power

Flash fire propensity of materials

NASA Technical Reports Server (NTRS)

Hilado, C. J.; Cumming, H. J.

1977-01-01

Flash fire test results on 86 materials, evaluated using the USF flash fire screening test, are presented. The materials which appear least prone to flash fires are PVC, polyphenylene oxide and sulfide, and polyether and polyaryl sulfone; these did not produce flash fires under these particular test conditions. The principal value of these screening tests at the present time is in identifying materials which appear prone to flash fires, and in identifying which formulations of a generic material are more or less prone to flash fires.

Hot flash report and measurement among Bangladeshi migrants, their London neighbors, and their community of origin.

PubMed

Sievert, L L; Begum, K; Sharmeen, T; Murphy, L; Whitcomb, B W; Chowdhury, O; Muttukrishna, S; Bentley, G R

2016-12-01

To examine hot flashes in relation to climate and activity patterns, and to compare subjective and objective hot flashes among Bangladeshi immigrants to London, their white London neighbors, and women still living in their community of origin, Sylhet, Bangladesh ("sedentees"). Ninety-five women, aged 40-55, wore the Biolog ambulatory hot flash monitor. Objective measurements and subjective hot flash reports were examined in relation to demographic, reproductive, anthropometric, and lifestyle variables; temperature and humidity at 12:00 and 18:00; and time spent on housework and cooking. Concordance of objective and subjective hot flashes was assessed by Kappa statistics and by sensitivity of hot flash classification. During the study period, Bangladeshi sedentees reported more subjective hot flashes (p < .05), but there was no difference in number of objective hot flashes. White Londoners were more likely to describe hot flashes on their face and neck compared to Bangladeshis (p < .05). Sedentees were more likely to describe hot flashes on their feet (p < .05). Postmenopausal status, increasing parity, and high levels of housework were significant determinants of subjective hot flashes, while ambient temperature and humidity were not. Measures of subjective/objective concordance were low but similar across groups (10-20%). The proportion of objective hot flashes that were also self-reported was lowest among immigrants. Hot flashes were not associated with warmer temperatures, but were associated with housework and with site-specific patterns of cooking. The number of objective hot flash measures did not differ, but differences in subjective experience suggest the influence of culture. © 2016 Wiley Periodicals, Inc.

Phenomenology of the sound-induced flash illusion.

PubMed

Abadi, Richard V; Murphy, Jonathan S

2014-07-01

Past studies, using pairings of auditory tones and visual flashes, which were static and coincident in space but variable in time, demonstrated errors in judging the temporal patterning of the visual flashes-the sound-induced flash illusion. These errors took one of the two forms: under-reporting (sound-induced fusion) or over-reporting (sound-induced fission) of the flash numbers. Our study had three objectives: to examine the robustness of both illusions and to consider the effects of stimulus set and response bias. To this end, we used an extended range of fixed spatial location flash-tone pairings, examined stimuli that were variable in space and time and measured confidence in judging flash numbers. Our results indicated that the sound-induced flash illusion is a robust percept, a finding underpinned by the confidence measures. Sound-induced fusion was found to be more robust than sound-induced fission and a most likely outcome when high numbers of flashes were incorporated within an incongruent flash-tone pairing. Conversely, sound-induced fission was the most likely outcome for the flash-tone pairing which contained two flashes. Fission was also shown to be strongly driven by stimuli confounds such as categorical boundary conditions (e.g. flash-tone pairings with ≤2 flashes) and compressed response options. These findings suggest whilst both fission and fusion are associated with 'auditory driving', the differences in the occurrence and strength of the two illusions not only reflect the separate neuronal mechanisms underlying audio and visual signal processing, but also the test conditions that have been used to investigate the sound-induced flash illusion.

How self-reported hot flashes may relate to affect, cognitive performance and sleep.

PubMed

Regestein, Quentin; Friebely, Joan; Schiff, Isaac

2015-08-01

To explain the controversy about whether midlife women who self-report hot flashes have relatively increased affective symptoms, poor cognitive performance or worse sleep. Retrospective data from 88 women seeking relief from bothersome day and night hot flashes were submitted to mixed linear regression modeling to find if estimated hot flashes, as measured by Women's Health Questionnaire (WHQ) items, or diary-documented hot flashes recorded daily, were associated with each other, or with affective, cognitive or sleep measures. Subjects averaged 6.3 daytime diary-documented hot flashes and 2.4 nighttime diary-documented hot flashes per 24h. Confounder-controlled diary-documented hot flashes but not estimated hot flashes were associated with increased Leeds anxiety scores (F=4.9; t=2.8; p=0.01) and Leeds depression scores (3.4; 2.5; 0.02), decreased Stroop Color-Word test performance (9.4; 3.5; 0.001), increased subjective sleep disturbance (effect size=0.83) and increased objective sleep disturbance (effect size=0.35). Hot flash effects were small to moderate in size. Univariate but not multivariate analyses revealed that all hot flash measures were associated with all affect measures. Different measures of hot flashes associated differently with affect, cognition and sleep. Only nighttime diary-document hot flash consistently correlated with any affect measures in multivariate analyses. The use of differing measures for hot flashes, affect, cognition and sleep may account for the continually reported inconsistencies in menopause study outcomes. This problem impedes forging a consensus on whether hot flashes correlate with neuropsychological symptoms. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

From network heterogeneities to familiarity detection and hippocampal memory management

PubMed Central

Wang, Jane X.; Poe, Gina; Zochowski, Michal

2009-01-01

Hippocampal-neocortical interactions are key to the rapid formation of novel associative memories in the hippocampus and consolidation to long term storage sites in the neocortex. We investigated the role of network correlates during information processing in hippocampal-cortical networks. We found that changes in the intrinsic network dynamics due to the formation of structural network heterogeneities alone act as a dynamical and regulatory mechanism for stimulus novelty and familiarity detection, thereby controlling memory management in the context of memory consolidation. This network dynamic, coupled with an anatomically established feedback between the hippocampus and the neocortex, recovered heretofore unexplained properties of neural activity patterns during memory management tasks which we observed during sleep in multiunit recordings from behaving animals. Our simple dynamical mechanism shows an experimentally matched progressive shift of memory activation from the hippocampus to the neocortex and thus provides the means to achieve an autonomous off-line progression of memory consolidation. PMID:18999453

[Wireless device for monitoring the patients with chronic disease].

PubMed

Ciorap, R; Zaharia, D; Corciovă, C; Ungureanu, Monica; Lupu, R; Stan, A

2008-01-01

Remote monitoring of chronic diseases can improve health outcomes and potentially lower health care costs. The high number of the patients, suffering of chronically diseases, who wish to stay at home rather then in a hospital increasing the need of homecare monitoring and have lead to a high demand of wearable medical devices. Also, extended patient monitoring during normal activity has become a very important target. In this paper are presented the design of the wireless monitoring devices based on ultra low power circuits, high storage memory flash, bluetooth communication and the firmware for the management of the monitoring device. The monitoring device is built using an ultra low power microcontroller (MSP430 from Texas Instruments) that offers the advantage of high integration of some circuits. The custom made electronic boards used for biosignal acquisition are also included modules for storage device (SD/MMC card) with FAT32 file system and Bluetooth device for short-range communication used for data transmission between monitoring device and PC or PDA. The work was focused on design and implementation of an ultra low power wearable device able to acquire patient vital parameters, causing minimal discomfort and allowing high mobility. The proposed wireless device could be used as a warning system for monitoring during normal activity.

Susceptibility to the Flash-Beep Illusion Is Increased in Children Compared to Adults

ERIC Educational Resources Information Center

Innes-Brown, Hamish; Barutchu, Ayla; Shivdasani, Mohit N.; Crewther, David P.; Grayden, David B.; Paolini, Antonio

2011-01-01

Audio-visual integration was studied in children aged 8-17 (N = 30) and adults (N = 22) using the "flash-beep illusion" paradigm, where the presentation of two beeps causes a single flash to be perceived as two flashes ("fission" illusion), and a single beep causes two flashes to be perceived as one flash ("fusion" illusion). Children reported…

Global Patterns of Lightning Properties Derived by OTD and LIS

NASA Technical Reports Server (NTRS)

Beirle, Steffen; Koshak, W.; Blakeslee, R.; Wagner, T.

2014-01-01

The satellite instruments Optical Transient Detector (OTD) and Lightning Imaging Sensor (LIS) provide unique empirical data about the frequency of lightning flashes around the globe (OTD), and the tropics (LIS), which 5 has been used before to compile a well received global climatology of flash rate densities. Here we present a statistical analysis of various additional lightning properties derived from OTD/LIS, i.e. the number of so-called "events" and "groups" per flash, as well as 10 the mean flash duration, footprint and radiance. These normalized quantities, which can be associated with the flash "strength", show consistent spatial patterns; most strikingly, oceanic flashes show higher values than continental flashes for all properties. Over land, regions with high (Eastern US) 15 and low (India) flash strength can be clearly identified. We discuss possible causes and implications of the observed regional differences. Although a direct quantitative interpretation of the investigated flash properties is difficult, the observed spatial patterns provide valuable information for the 20 interpretation and application of climatological flash rates. Due to the systematic regional variations of physical flash characteristics, viewing conditions, and/or measurement sensitivities, parametrisations of lightning NOx based on total flash rate densities alone are probably affected by regional biases.

Flooding and Schools

ERIC Educational Resources Information Center

National Clearinghouse for Educational Facilities, 2011

2011-01-01

According to the Federal Emergency Management Agency, flooding is the nation's most common natural disaster. Some floods develop slowly during an extended period of rain or in a warming trend following a heavy snow. Flash floods can occur quickly, without any visible sign of rain. Catastrophic floods are associated with burst dams and levees,…

Static Behavior of Chalcogenide Based Programmable Metallization Cells

NASA Astrophysics Data System (ADS)

Rajabi, Saba

Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.

Characteristics of Lightning Within Electrified Snowfall Events Using Lightning Mapping Arrays

NASA Astrophysics Data System (ADS)

Schultz, Christopher J.; Lang, Timothy J.; Bruning, Eric C.; Calhoun, Kristin M.; Harkema, Sebastian; Curtis, Nathan

2018-02-01

This study examined 34 lightning flashes within four separate thundersnow events derived from lightning mapping arrays (LMAs) in northern Alabama, central Oklahoma, and Washington DC. The goals were to characterize the in-cloud component of each lightning flash, as well as the correspondence between the LMA observations and lightning data taken from national lightning networks like the National Lightning Detection Network (NLDN). Individual flashes were examined in detail to highlight several observations within the data set. The study results demonstrated that the structures of these flashes were primarily normal polarity. The mean area encompassed by this set of flashes is 375 km2, with a maximum flash extent of 2,300 km2, a minimum of 3 km2, and a median of 128 km2. An average of 2.29 NLDN flashes were recorded per LMA-derived lightning flash. A maximum of 11 NLDN flashes were recorded in association with a single LMA-derived flash on 10 January 2011. Additionally, seven of the 34 flashes in the study contain zero NLDN-identified flashes. Eleven of the 34 flashes initiated from tall human-made objects (e.g., communication towers). In at least six lightning flashes, the NLDN detected a return stroke from the cloud back to the tower and not the initial upward leader. This study also discusses lightning's interaction with the human-built environment and provides an example of lightning within heavy snowfall observed by Geostationary Operational Environmental Satellite-16's Geostationary Lightning Mapper.

Hot flashes in breast cancer survivors: Frequency, severity and impact.

PubMed

Chang, Hao-Yuan; Jotwani, Aparna C; Lai, Yeur-Hur; Jensen, Mark P; Syrjala, Karen L; Fann, Jesse R; Gralow, Julie

2016-06-01

To (1) determine the frequency and severity of hot flashes, (2) examine the associations between hot flash frequency and severity and quality of life, and (3) identify the predictors of hot flash activity in breast cancer survivors. The study used a cross-sectional design and mailed survey of 253 breast cancer survivors recruited from a cancer wellness clinic. Participants provided information regarding cancer history, hot flashes, pain intensity, sleep problems, physical functioning, and psychological functioning. About half of the survivors reported at least one hot flash in the past 24 h (45%) or past week (52%). The average frequency of hot flashes was 1.9 in the past 24 h and 1.8 in the past week. Hot flash severity was usually mild or asymptomatic. However, participants with hot flashes reported significantly more sleep problems and higher pain severity than those reporting no hot flashes. Moreover, the severity of hot flashes was associated with more sleep problems, higher pain severity, and more psychological dysfunction. History of hormonal suppression therapy and younger age predicted hot flash activity in the study sample. In breast cancer survivors, hot flashes are common and are associated with unpleasant symptoms and poor quality of life. Research is needed to determine if treatments that reduce the frequency and severity of hot flashes in breast cancer survivors also result in improvements in symptoms such as sleep problems, pain, and psychological dysfunction. Copyright © 2016 Elsevier Ltd. All rights reserved.

Hot flashes in breast cancer survivors: Frequency, severity and impact

PubMed Central

Chang, Hao-Yuan; Jotwani, Aparna C.; Lai, Yeur-Hur; Jensen, Mark P.; Syrjala, Karen L.; Fann, Jesse R.; Gralow, Julie

2018-01-01

Purposes To (1) determine the frequency and severity of hot flashes, (2) examine the associations be- tween hot flash frequency and severity and quality of life, and (3) identify the predictors of hot flash activity in breast cancer survivors. Methods The study used a cross-sectional design and mailed survey of 253 breast cancer survivors recruited from a cancer wellness clinic. Participants provided information regarding cancer history, hot flashes, pain intensity, sleep problems, physical functioning, and psychological functioning. Results About half of the survivors reported at least one hot flash in the past 24 h (45%) or past week (52%). The average frequency of hot flashes was 1.9 in the past 24 h and 1.8 in the past week. Hot flash severity was usually mild or asymptomatic. However, participants with hot flashes reported significantly more sleep problems and higher pain severity than those reporting no hot flashes. Moreover, the severity of hot flashes was associated with more sleep problems, higher pain severity, and more psychological dysfunction. History of hormonal suppression therapy and younger age predicted hot flash activity in the study sample. Conclusions In breast cancer survivors, hot flashes are common and are associated with unpleasant symptoms and poor quality of life. Research is needed to determine if treatments that reduce the frequency and severity of hot flashes in breast cancer survivors also result in improvements in symptoms such as sleep problems, pain, and psychological dysfunction. PMID:27065357

Characteristics of Lightning within Electrified Snowfall Events using Lightning Mapping Arrays.

PubMed

Schultz, Christopher J; Lang, Timothy J; Bruning, Eric C; Calhoun, Kristin M; Harkema, Sebastian; Curtis, Nathan

2018-02-27

This study examined 34 lightning flashes within four separate thundersnow events derived from lightning mapping arrays (LMAs) in northern Alabama, central Oklahoma, and Washington DC. The goals were to characterize the in-cloud component of each lightning flash, as well as the correspondence between the LMA observations and lightning data taken from national lightning networks like the National Lightning Detection Network (NLDN). Individual flashes were examined in detail to highlight several observations within the dataset. The study results demonstrated that the structures of these flashes were primarily normal polarity. The mean area encompassed by this set of flashes is 375 km 2 , with a maximum flash extent of 2300 km 2 , a minimum of 3 km 2 , and a median of 128 km 2 . An average of 2.29 NLDN flashes were recorded per LMA-derived lightning flash. A maximum of 11 NLDN flashes were recorded in association with a single LMA-derived flash on 10 January 2011. Additionally, seven of the 34 flashes in the study contain zero NLDN identified flashes. Eleven of the 34 flashes initiated from tall human-made objects (e.g., communication towers). In at least six lightning flashes, the NLDN detected a return stroke from the cloud back to the tower and not the initial upward leader. This study also discusses lightning's interaction with the human built environment and provides an example of lightning within heavy snowfall observed by GOES-16's Geostationary Lightning Mapper.

“Distracters” Do Not Always Distract: Visual Working Memory for Angry Faces is Enhanced by Incidental Emotional Words

PubMed Central

Jackson, Margaret C.; Linden, David E. J.; Raymond, Jane E.

2012-01-01

We are often required to filter out distraction in order to focus on a primary task during which working memory (WM) is engaged. Previous research has shown that negative versus neutral distracters presented during a visual WM maintenance period significantly impair memory for neutral information. However, the contents of WM are often also emotional in nature. The question we address here is how incidental information might impact upon visual WM when both this and the memory items contain emotional information. We presented emotional versus neutral words during the maintenance interval of an emotional visual WM faces task. Participants encoded two angry or happy faces into WM, and several seconds into a 9 s maintenance period a negative, positive, or neutral word was flashed on the screen three times. A single neutral test face was presented for retrieval with a face identity that was either present or absent in the preceding study array. WM for angry face identities was significantly better when an emotional (negative or positive) versus neutral (or no) word was presented. In contrast, WM for happy face identities was not significantly affected by word valence. These findings suggest that the presence of emotion within an intervening stimulus boosts the emotional value of threat-related information maintained in visual WM and thus improves performance. In addition, we show that incidental events that are emotional in nature do not always distract from an ongoing WM task. PMID:23112782

Flexible Peripheral Component Interconnect Input/Output Card

NASA Technical Reports Server (NTRS)

Bigelow, Kirk K.; Jerry, Albert L.; Baricio, Alisha G.; Cummings, Jon K.

2010-01-01

The Flexible Peripheral Component Interconnect (PCI) Input/Output (I/O) Card is an innovative circuit board that provides functionality to interface between a variety of devices. It supports user-defined interrupts for interface synchronization, tracks system faults and failures, and includes checksum and parity evaluation of interface data. The card supports up to 16 channels of high-speed, half-duplex, low-voltage digital signaling (LVDS) serial data, and can interface combinations of serial and parallel devices. Placement of a processor within the field programmable gate array (FPGA) controls an embedded application with links to host memory over its PCI bus. The FPGA also provides protocol stacking and quick digital signal processor (DSP) functions to improve host performance. Hardware timers, counters, state machines, and other glue logic support interface communications. The Flexible PCI I/O Card provides an interface for a variety of dissimilar computer systems, featuring direct memory access functionality. The card has the following attributes: 8/16/32-bit, 33-MHz PCI r2.2 compliance, Configurable for universal 3.3V/5V interface slots, PCI interface based on PLX Technology's PCI9056 ASIC, General-use 512K 16 SDRAM memory, General-use 1M 16 Flash memory, FPGA with 3K to 56K logical cells with embedded 27K to 198K bits RAM, I/O interface: 32-channel LVDS differential transceivers configured in eight, 4-bit banks; signaling rates to 200 MHz per channel, Common SCSI-3, 68-pin interface connector.

FLASH2: Operation, beamlines, and photon diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plönjes, Elke, E-mail: elke.ploenjes@desy.de; Faatz, Bart; Kuhlmann, Marion

2016-07-27

FLASH2, a major extension of the soft X-ray free-electron laser FLASH at DESY, turns FLASH into a multi-user FEL facility. A new undulator line is located in a separate accelerator tunnel and driven additionally by the FLASH linear accelerator. First lasing of FLASH2 was achieved in August 2014 with simultaneous user operation at FLASH1. The new FLASH2 experimental hall offers space for up to six experimental end stations, some of which will be installed permanently. The wide wavelength range spans from 4-60 nm and 0.8 nm in the 5{sup th} harmonic and in the future deep into the water windowmore » in the fundamental. While this is of high interest to users, it is challenging from the beamline instrumentation point of view. Online diagnostics - which are mostly pulse resolved - for beam intensity, position, wavelength, wave front, and pulse length have been to a large extent developed at FLASH(1) and have now been optimized for FLASH2. Pump-probe facilities for XUV-XUV, XUV optical and XUV-THz experiments will complete the FLASH2 user facility.« less

Magnitude of the impact of hot flashes on sleep in perimenopausal women

PubMed Central

de Zambotti, Massimiliano; Colrain, Ian M.; Javitz, Harold S.; Baker, Fiona C.

2014-01-01

Objective To quantify the impact of objectively-recorded hot flashes on objective sleep in perimenopausal women. Design Cross-sectional study. Participants underwent 1–5 laboratory-based polysomnographic recordings for a total of 63 nights, including sternal skin conductance measures, from which 222 hot flashes were identified according to established criteria. Data were analyzed with hierarchical mixed-effect models and Spearman correlations. Setting Sleep laboratory. Patients 34 perimenopausal women (Age±SD:50.4±2.7y). Intervention None. Main Outcome Measures Perceived and polysomnographic sleep measures (sleep quality, amount of wake after sleep onset and number of awakenings). Subjective (frequency and bother) and objective (frequency and amount of hot flash-associated wake time) hot flash measures. Results Women had an average of 3.5 (95%CI:2.8–4.2, range=1– 9) objective hot flashes per night. 69.4% of hot flashes were associated with an awakening. Hot flash-associated wake time per night was, on average, 16.6 min (95%CI:10.8–22.4), which accounted for 27.2% (SD 27.1) of total wakefulness per night. Hot flash-associated wake, but not frequency, was negatively associated with sleep efficiency and positively associated with wake after sleep onset. Also, self-reported wakefulness correlated with hot flash-associated wake, suggesting that women’s estimates of wakefulness are influenced by the amount of time spent awake in association with hot flashes during the night. More perceived and bothersome hot flashes correlated with more perceived wakefulness and awakenings and more objective hot flash-associated wake time and hot flash frequency. Conclusions The presence of physiological hot flashes accounts for a significant proportion of total objective wakefulness during the night in perimenopausal women. PMID:25256933

Adiposity and Hot Flashes in Midlife Women: A Modifying Role of Age

PubMed Central

Santoro, Nanette; Matthews, Karen A.

2011-01-01

Background: The nature of the relationship between adiposity and hot flashes has been debated, but it has not been examined using physiological measures of hot flashes. We examined associations between body size/composition and physiologically assessed hot flashes among women with hot flashes. Methods: A subcohort of women in the Study of Women's Health Across the Nation (n = 52; 25 African-American and 27 non-Hispanic Caucasian; ages, 54 to 63 yr) who reported hot flashes, had their uterus and ovaries, and were not taking medications impacting hot flashes were recruited in 2008–2009. Women completed anthropometric measures [bioimpedance analysis of total percentage of body fat, body mass index (BMI), waist circumference], a blood draw (estradiol, SHBG, FSH, dehydroepiandrosterone sulfate), and 4 d of ambulatory sternal skin conductance monitoring with diary (physiological and reported hot flashes, respectively). Associations between anthropometrics and hot flashes were estimated with generalized estimating equations with covariates age, race, and anxiety. Results: Higher BMI (odds ratio, 0.97; 95% confidence interval, 0.94–0.99; P < 0.05) and waist circumference (odds ratio, 0.98; 95% confidence interval, 0.97–0.99; P < 0.01) were associated with fewer physiological hot flashes. Interactions by age (P < 0.05) indicated that inverse associations of body fat, BMI, and waist circumference with hot flashes were most apparent among the oldest women in the sample. Estradiol and SHBG reduced but did not eliminate age-related variations in relations between body size/composition and hot flashes. Conclusion: Higher adiposity was associated with fewer physiological hot flashes among older women with hot flashes. A modifying role of age must be considered in understanding the role of adiposity in hot flashes. PMID:21778220

Adiposity and hot flashes in midlife women: a modifying role of age.

PubMed

Thurston, Rebecca C; Santoro, Nanette; Matthews, Karen A

2011-10-01

The nature of the relationship between adiposity and hot flashes has been debated, but it has not been examined using physiological measures of hot flashes. We examined associations between body size/composition and physiologically assessed hot flashes among women with hot flashes. A subcohort of women in the Study of Women's Health Across the Nation (n = 52; 25 African-American and 27 non-Hispanic Caucasian; ages, 54 to 63 yr) who reported hot flashes, had their uterus and ovaries, and were not taking medications impacting hot flashes were recruited in 2008-2009. Women completed anthropometric measures [bioimpedance analysis of total percentage of body fat, body mass index (BMI), waist circumference], a blood draw (estradiol, SHBG, FSH, dehydroepiandrosterone sulfate), and 4 d of ambulatory sternal skin conductance monitoring with diary (physiological and reported hot flashes, respectively). Associations between anthropometrics and hot flashes were estimated with generalized estimating equations with covariates age, race, and anxiety. Higher BMI (odds ratio, 0.97; 95% confidence interval, 0.94-0.99; P < 0.05) and waist circumference (odds ratio, 0.98; 95% confidence interval, 0.97-0.99; P < 0.01) were associated with fewer physiological hot flashes. Interactions by age (P < 0.05) indicated that inverse associations of body fat, BMI, and waist circumference with hot flashes were most apparent among the oldest women in the sample. Estradiol and SHBG reduced but did not eliminate age-related variations in relations between body size/composition and hot flashes. Higher adiposity was associated with fewer physiological hot flashes among older women with hot flashes. A modifying role of age must be considered in understanding the role of adiposity in hot flashes.

Initial Breakdown Pulse Amplitudes in Intracloud and Cloud-to-Ground Lightning Flashes

NASA Astrophysics Data System (ADS)

Marshall, T. C.; Smith, E. M.; Stolzenburg, M.; Karunarathne, S.; Siedlecki, R. D., II

2017-12-01

This study analyzes the largest initial breakdown (IB) pulse in flashes from three storms in Florida. The study was motivated in part by the possibility that IB pulses of IC flashes may cause of terrestrial gamma-ray flashes (TGFs). The range-normalized, zero-to-peak amplitude of the largest IB pulse within each flash was determined along with its altitude, duration, and occurrence time in the flash. Appropriate data were available for 40 intracloud (IC) and 32 cloud-to-ground (CG) flashes. Histograms of the magnitude of the largest IB pulse amplitude by flash type were similar, with mean (median) values of 1.49 (1.05) V/m for IC flashes and -1.35 (-0.87) V/m for CG flashes. The mean amplitude of the largest IC IB pulses are substantially smaller (roughly an order of magnitude smaller) than the few known pulse amplitudes of TGF events and TGF candidate events. The largest IB pulse in 30 IC flashes showed a weak inverse relation between pulse amplitude and altitude. Amplitude of the largest IB pulse for 25 CG flashes showed no altitude correlation. Duration of the largest IB pulse in ICs averaged twice as long as in CGs (96 μs versus 46 μs); all of the CG durations were <100 μs. Among the ICs, there is a positive relation between largest IB pulse duration and amplitude; the linear correlation coefficient is 0.385 with outliers excluded. The largest IB pulse in IC flashes typically occurred at a longer time after the first IB pulse (average 4.1 ms) than was the case in CG flashes (average 0.6 ms). In both flash types, the largest IB pulse was the first IB pulse in about 30% of the cases.

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

NASA Astrophysics Data System (ADS)

Lee, Ji-hyun; Chae, Byeong-Kyu; Kim, Joong-Jeong; Lee, Sun Young; Park, Chan Gyung

2015-01-01

Dopant control becomes more difficult and critical as silicon devices become smaller. We observed the dopant distribution in a thermally annealed polysilicon gate using Transmission Electron Microscopy (TEM) and Atom probe tomography (APT). Phosphorus was doped at the silicon-nitride-diffusion-barrier-layer-covered polycrystalline silicon gate. Carbon also incorporated at the gate for the enhancement of operation uniformity. The impurity distribution was observed using atom probe tomography. The carbon atoms had segregated at grain boundaries and suppressed silicon grain growth. Phosphorus atoms, on the other hand, tended to pile-up at the interface. A 1-nm-thick diffusion barrier effectively blocked P atom out-diffusion. [Figure not available: see fulltext.

Detection and analysis of radio frequency lightning emissions

NASA Technical Reports Server (NTRS)

Jalali, F.

1982-01-01

The feasibility study of detection of lightning discharges from a geosynchronous satellite requires adequate ground-based information regarding emission characteristics. In this investigation, a measurement system for collection of S-band emission data is set up and calibrated, and the operations procedures for rapid data collection during a storm activity developed. The system collects emission data in two modes; a digitized, high-resolution, short duration record stored in solid-state memory, and a continuous long-duration record on magnetic tape. Representative lightning flash data are shown. Preliminary results indicate appreciable RF emissions at 2 gHz from both the leader and return strokes portions of the cloud-to-ground discharge with strong peaks associated with the return strokes.

Development of minimally invasive surgery for intractable epilepsy

NASA Astrophysics Data System (ADS)

Yamakawa, Takeshi

2009-04-01

Epilepsy is a chronic brain disorder characterized by recurrent seizures. The seizure is shot down by the surgical removal of the region which is so called "epileptogenc focus". However, the accuracy to detect the focus is not good (order of cm). Thus the extirpation of focus with significant margin causes the removal of normal brain and leads to the severe aftereffects such as restricted vision, motor dysfunction, disorder of memory, and so on. To cope with this problem, we should develop the technology of (1) detecting the epileptogenic focus, and (2) necrotizing the epileptogenic focus excluding normal brain by (a) colliquative necrosis with flash freezing and melting or (b) cauterizing by focused laser beam.

SUMO regulates proteasome-dependent degradation of FLASH/Casp8AP2

PubMed Central

Vennemann, Astrid; Hofmann, Thomas G.

2013-01-01

FLASH/Casp8AP2 is a huge multifunctional protein involved in multiple cellular processes, reaching from death receptor signaling to regulation of histone gene transcription and histone mRNA processing. Previous work has shown that FLASH localizes to Cajal bodies and promyelocytic leukemia (PML) bodies. However, the function of its nuclear body association remains unclear. Here we demonstrate that murine FLASH is covalently modified by SUMO at Lys residue 1792. Interestingly, ectopic expression of SUMO results in proteasome-dependent degradation of FLASH. A point mutant of FLASH with a mutated SUMO acceptor lysine residue, FLASHK1792R, is resistant to SUMO-induced degradation. Finally, we show that arsenic trioxide, a drug known to potentiate SUMO modification and degradation of PML, triggers recruitment of FLASH to PML bodies and concomitant loss of FLASH protein. Our data suggest that SUMO targets FLASH for proteasome-dependent degradation, which is associated with recruitment of FLASH to PML bodies. PMID:23673342

The October 2014 United States Treasury bond flash crash and the contributory effect of mini flash crashes

PubMed Central

Levine, Zachary S.; Floridi, Luciano

2017-01-01

We investigate the causal uncertainty surrounding the flash crash in the U.S. Treasury bond market on October 15, 2014, and the unresolved concern that no clear link has been identified between the start of the flash crash at 9:33 and the opening of the U.S. equity market at 9:30. We consider the contributory effect of mini flash crashes in equity markets, and find that the number of equity mini flash crashes in the three-minute window between market open and the Treasury Flash Crash was 2.6 times larger than the number experienced in any other three-minute window in the prior ten weekdays. We argue that (a) this statistically significant finding suggests that mini flash crashes in equity markets both predicted and contributed to the October 2014 U.S. Treasury Bond Flash Crash, and (b) mini-flash crashes are important phenomena with negative externalities that deserve much greater scholarly attention. PMID:29091931

PIAS1 interacts with FLASH and enhances its co-activation of c-Myb

PubMed Central

2011-01-01

Background FLASH is a huge nuclear protein involved in various cellular functions such as apoptosis signalling, NF-κB activation, S-phase regulation, processing of histone pre-mRNAs, and co-regulation of transcription. Recently, we identified FLASH as a co-activator of the transcription factor c-Myb and found FLASH to be tightly associated with active transcription foci. As a huge multifunctional protein, FLASH is expected to have many interaction partners, some which may shed light on its function as a transcriptional regulator. Results To find additional FLASH-associated proteins, we performed a yeast two-hybrid (Y2H) screening with FLASH as bait and identified the SUMO E3 ligase PIAS1 as an interaction partner. The association appears to involve two distinct interaction surfaces in FLASH. We verified the interaction by Y2H-mating, GST pulldowns, co-IP and ChIP. FLASH and PIAS1 were found to co-localize in nuclear speckles. Functional assays revealed that PIAS1 enhances the intrinsic transcriptional activity of FLASH in a RING finger-dependent manner. Furthermore, PIAS1 also augments the specific activity of c-Myb, and cooperates with FLASH to further co-activate c-Myb. The three proteins, FLASH, PIAS1, and c-Myb, are all co-localized with active RNA polymerase II foci, resembling transcription factories. Conclusions We conclude that PIAS1 is a common partner for two cancer-related nuclear factors, c-Myb and FLASH. Our results point to a functional cooperation between FLASH and PIAS1 in the enhancement of c-Myb activity in active nuclear foci. PMID:21338522

"Know What to Do If You Encounter a Flash Flood": Mental Models Analysis for Improving Flash Flood Risk Communication and Public Decision Making.

PubMed

Lazrus, Heather; Morss, Rebecca E; Demuth, Julie L; Lazo, Jeffrey K; Bostrom, Ann

2016-02-01

Understanding how people view flash flood risks can help improve risk communication, ultimately improving outcomes. This article analyzes data from 26 mental models interviews about flash floods with members of the public in Boulder, Colorado, to understand their perspectives on flash flood risks and mitigation. The analysis includes a comparison between public and professional perspectives by referencing a companion mental models study of Boulder-area professionals. A mental models approach can help to diagnose what people already know about flash flood risks and responses, as well as any critical gaps in their knowledge that might be addressed through improved risk communication. A few public interviewees mentioned most of the key concepts discussed by professionals as important for flash flood warning decision making. However, most interviewees exhibited some incomplete understandings and misconceptions about aspects of flash flood development and exposure, effects, or mitigation that may lead to ineffective warning decisions when a flash flood threatens. These include important misunderstandings about the rapid evolution of flash floods, the speed of water in flash floods, the locations and times that pose the greatest flash flood risk in Boulder, the value of situational awareness and environmental cues, and the most appropriate responses when a flash flood threatens. The findings point to recommendations for ways to improve risk communication, over the long term and when an event threatens, to help people quickly recognize and understand threats, obtain needed information, and make informed decisions in complex, rapidly evolving extreme weather events such as flash floods. © 2015 Society for Risk Analysis.

Improving flash flood frequency analyses by using non-systematic dendrogeomorphic data

NASA Astrophysics Data System (ADS)

Mediero, Luis; María Bodoque, Jose; Garrote, Julio; Ballesteros-Cánovas, Juan Antonio; Aroca-Jimenez, Estefania

2017-04-01

Flash floods have a rapid hydrological response in catchments with short lag times, characterized by ''peaky'' hydrographs. The peak flows are reached within a few hours, thus giving little or no advance warning to prevent and mitigate flood damage. As a result, flash floods may result in a high social risk, as shown for instance by the 1997 Biescas disaster in Spain. The analysis and management of flood risk are clearly conditioned by data availability, especially in mountain areas where usually flash-floods occur. Nevertheless, in mountain basins there is often short data series available that are not accurate in terms of statistical significance. In addition, when flow data is ready for use maximum annual values are generally not as reliable as average flow values, since conventional stream gauge stations may not record the extreme floods, leading to gaps in the time series. Dendrogeomorphology has been shown to be especially useful for improving flood frequency analyses in catchments where short flood series limit the use of conventional hydrological methods. This study presents pros and cons of using a given probability distribution function, such as the Generalized Extreme Value (GEV), and Bayesian Markov Chain Monte Carlo (MCMC) methods to account for non-systematic data provided by dendrogeomorphic techniques, in order to asses flood quantile estimates accuracy. To this end, we have considered a set of locations in Central Spain, where systematic flow available at a gauging site can be extended with non-systematic data obtained from implementation of dendrogeomorphic techniques.

The development of a flash flood severity index

NASA Astrophysics Data System (ADS)

Schroeder, Amanda J.; Gourley, Jonathan J.; Hardy, Jill; Henderson, Jen J.; Parhi, Pradipta; Rahmani, Vahid; Reed, Kimberly A.; Schumacher, Russ S.; Smith, Brianne K.; Taraldsen, Matthew J.

2016-10-01

Flash flooding is a high impact weather event that requires clear communication regarding severity and potential hazards among forecasters, researchers, emergency managers, and the general public. Current standards used to communicate these characteristics include return periods and the United States (U.S.) National Weather Service (NWS) 4-tiered river flooding severity scale. Return periods are largely misunderstood, and the NWS scale is limited to flooding on gauged streams and rivers, often leaving out heavily populated urban corridors. To address these shortcomings, a student-led group of interdisciplinary researchers came together in a collaborative effort to develop an impact-based Flash Flood Severity Index (FFSI). The index was proposed as a damage-based, post-event assessment tool, and preliminary work toward the creation of this index has been completed and presented here. Numerous case studies were analyzed to develop the preliminary outline for the FFSI, and three examples of such cases are included in this paper. The scale includes five impact-based categories ranging from Category 1 very minor flooding to Category 5 catastrophic flooding. Along with the numerous case studies used to develop the initial outline of the scale, empirical data in the form of semi-structured interviews were conducted with multiple NWS forecasters across the country and their responses were analyzed to gain more perspective on the complicated nature of flash flood definitions and which tools were found to be most useful. The feedback from these interviews suggests the potential for acceptance of such an index if it can account for specific challenges.

Hot Flashes and Carotid Intima Media Thickness among Midlife Women

PubMed Central

Thurston, Rebecca C.; Sutton-Tyrrell, Kim; Everson-Rose, Susan A.; Hess, Rachel; Powell, Lynda H.; Matthews, Karen A.

2010-01-01

Objective Emerging evidence suggests associations between menopausal hot flashes and cardiovascular risk. Whether hot flashes are associated with intima media thickness (IMT) or IMT changes over time is unknown. We hypothesized that reported hot flashes would be associated with greater IMT cross-sectionally and with greater IMT progression over two years. Methods Participants were 432 women ages 45-58 at baseline participating in SWAN Heart, an ancillary study to the Study of Women's Health Across the Nation. Measures at the SWAN Heart baseline and follow-up visit two years later included a carotid artery ultrasound, reported hot flashes (past two weeks: none, 1-5, ≥6 days), and a blood sample for measurement of estradiol. Results Women reporting hot flashes ≥6 days in the prior two weeks had significantly higher IMT than women without hot flashes at baseline (mean difference(SE), mm =0.02(0.01), p=0.03) and follow-up (mean difference(SE), mm =0.02(0.01), p=0.04) visits, controlling for demographic factors and cardiovascular risk factors. Reporting hot flashes at both study visits was associated with higher follow-up IMT relative to reporting hot flashes at neither visit (mean difference(SE), mm=0.03(0.01), p=0.03). Associations between hot flashes and IMT largely remained after adjusting for estradiol. An interaction between hot flashes and obesity status was observed (p=0.05) such that relations between hot flashes and IMT were observed principally among overweight/obese women. Hot flashes were not associated with IMT progression. Conclusions These findings provided some indication that women reporting hot flashes ≥6 days in the prior two weeks may have higher IMT than women without hot flashes, particularly for women who are overweight or obese. Further work should determine whether hot flashes mark adverse underlying vascular changes. PMID:21242820

50 CFR 600.730 - Facilitation of enforcement.

Code of Federal Regulations, 2011 CFR

2011-10-01

... transmitted by flashing light directed at the vessel signaled. USCG units will normally use the flashing light... your vessel instantly.” (Period (.) means a short flash of light; dash (-) means a long flash of light... authorized officer using loudhailer, radiotelephone, flashing light signal, or other means constitutes prima...

50 CFR 600.730 - Facilitation of enforcement.

Code of Federal Regulations, 2010 CFR

2010-10-01

... transmitted by flashing light directed at the vessel signaled. USCG units will normally use the flashing light... your vessel instantly.” (Period (.) means a short flash of light; dash (-) means a long flash of light... authorized officer using loudhailer, radiotelephone, flashing light signal, or other means constitutes prima...

49 CFR 234.217 - Flashing light units.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Flashing light units. 234.217 Section 234.217..., Inspection, and Testing Maintenance Standards § 234.217 Flashing light units. (a) Each flashing light unit.... (b) Each flashing light unit shall be maintained to prevent dust and moisture from entering the...

49 CFR 234.217 - Flashing light units.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Flashing light units. 234.217 Section 234.217..., Inspection, and Testing Maintenance Standards § 234.217 Flashing light units. (a) Each flashing light unit.... (b) Each flashing light unit shall be maintained to prevent dust and moisture from entering the...

Lunar Impact Flash Locations

NASA Technical Reports Server (NTRS)

Moser, D. E.; Suggs, R. M.; Kupferschmidt, L.; Feldman, J.

2015-01-01

A bright impact flash detected by the NASA Lunar Impact Monitoring Program in March 2013 brought into focus the importance of determining the impact flash location. A process for locating the impact flash, and presumably its associated crater, was developed using commercially available software tools. The process was successfully applied to the March 2013 impact flash and put into production on an additional 300 impact flashes. The goal today: provide a description of the geolocation technique developed.

OTD Observations of Continental US Ground and Cloud Flashes

NASA Technical Reports Server (NTRS)

Koshak, William

2007-01-01

Lightning optical flash parameters (e.g., radiance, area, duration, number of optical groups, and number of optical events) derived from almost five years of Optical Transient Detector (OTD) data are analyzed. Hundreds of thousands of OTD flashes occurring over the continental US are categorized according to flash type (ground or cloud flash) using US National Lightning Detection Network TM (NLDN) data. The statistics of the optical characteristics of the ground and cloud flashes are inter-compared on an overall basis, and as a function of ground flash polarity. A standard two-distribution hypothesis test is used to inter-compare the population means of a given lightning parameter for the two flash types. Given the differences in the statistics of the optical characteristics, it is suggested that statistical analyses (e.g., Bayesian Inference) of the space-based optical measurements might make it possible to successfully discriminate ground and cloud flashes a reasonable percentage of the time.

Menopausal Hot Flashes and White Matter Hyperintensities

PubMed Central

Thurston, Rebecca C.; Aizenstein, Howard J.; Derby, Carol A.; Sejdić, Ervin; Maki, Pauline M.

2015-01-01

Objective Hot flashes are the classic menopausal symptom. Emerging data links hot flashes to cardiovascular disease (CVD) risk, yet how hot flashes are related to brain health is poorly understood. We examined the relationship between hot flashes - measured via physiologic monitor and self-report - and white matter hyperintensities (WMH) among midlife women. Methods Twenty midlife women ages 40-60 without clinical CVD, with their uterus and both ovaries, and not taking hormone therapy were recruited. Women underwent 24 hours of ambulatory physiologic and diary hot flash monitoring to quantify hot flashes; magnetic resonance imaging to assess WMH burden; 72 hours of actigraphy and questionnaires to quantify sleep; and a blood draw, questionnaires, and physical measures to quantify demographics and CVD risk factors. Test of a priori hypotheses regarding relations between physiologically-monitored and self-reported wake and sleep hot flashes and WMH were conducted in linear regression models. Results More physiologically-monitored hot flashes during sleep were associated with greater WMH, controlling for age, race, and body mass index [beta(standard error)=.0002 (.0001), p=.03]. Findings persisted controlling for sleep characteristics and additional CVD risk factors. No relations were observed for self-reported hot flashes. Conclusions More physiologically-monitored hot flashes during sleep were associated with greater WMH burden among midlife women free of clinical CVD. Results suggest that relations between hot flashes and CVD risk observed in the periphery may extend to the brain. Future work should consider the unique role of sleep hot flashes in brain health. PMID:26057822

Some properties of negative cloud-to-ground flashes from observations of a local thunderstorm based on accurate-stroke-count studies

NASA Astrophysics Data System (ADS)

Zhu, Baoyou; Ma, Ming; Xu, Weiwei; Ma, Dong

2015-12-01

Properties of negative cloud-to-ground (CG) lightning flashes, in terms of number of strokes per flash, inter-stroke intervals and the relative intensity of subsequent and first strokes, were presented by accurate-stroke-count studies based on all 1085 negative flashes from a local thunderstorm. The percentage of single-stroke flashes and stroke multiplicity evolved significantly during the whole life cycle of the study thunderstorm. The occurrence probability of negative CG flashes decreased exponentially with the increasing number of strokes per flash. About 30.5% of negative CG flashes contained only one stroke and number of strokes per flash averaged 3.3. In a subset of 753 negative multiple-stroke flashes, about 41.4% contained at least one subsequent stroke stronger than the corresponding first stroke. Subsequent strokes tended to decrease in strength with their orders and the ratio of subsequent to first stroke peaks presented a geometric mean value of 0.52. Interestingly, negative CG flashes of higher multiplicity tended to have stronger initial strokes. 2525 inter-stroke intervals showed a more or less log-normal distribution and gave a geometric mean value of 62 ms. For CG flashes of particular multiplicity geometric mean inter-stroke intervals tended to decrease with the increasing number of strokes per flash, while those intervals associated with higher order strokes tended to be larger than those associated with low order strokes.

Effect of Escitalopram on Hot Flash Interference: A Randomized, Controlled Trial

PubMed Central

Carpenter, Janet S.; Guthrie, Katherine A.; Larson, Joseph C.; Freeman, Ellen W.; Joffe, Hadine; Reed, Susan D.; Ensrud, Kristine E.; LaCroix, Andrea Z.

2012-01-01

Objectives To estimate the effect of escitalopram 10–20 mg/day versus placebo for reducing hot flash interference in daily life and understand correlates and predictors of reductions in hot flash interference, a key measure of quality of life. Design Multi-site, randomized, double-blind, placebo-controlled clinical trial. Patients 205 midlife women (46% African-American) who met criteria participated. Setting MsFLASH clinical sites in Boston, Indianapolis, Oakland, and Philadelphia. Intervention After baseline, women were randomized to 1 pill of escitalopram 10 mg/day (n=104) or placebo (n=101) with follow-up at 4- and 8-weeks. At week 4, those not achieving 50% fewer hot flashes were increased to 2 pills daily (20 mg/day or 2 placebo pills). Main outcome measures The Hot Flash Related Daily Interference Scale; Correlates were variables from hot flash diaries; Predictors were baseline demographics, clinical variables, depression, anxiety, sleep quality, and hot flashes. Results Compared to placebo, escitalopram significantly reduced hot flash interference by 6.0 points at week 4 and 3.4 points at week 8 more than placebo (p=0.012). Reductions in hot flash interference correlated with changes in hot flash diary variables. However, baseline variables did not significantly predict reductions in hot flash interference. Conclusions Escitalopram 10–20mg/day for 8 weeks improves women’s quality of life and this benefit did not vary by demographic, clinical, mood, sleep, or hot flash variables. PMID:22480818

Yield enhancement of 3D flash devices through broadband brightfield inspection of the channel hole process module

NASA Astrophysics Data System (ADS)

Lee, Jung-Youl; Seo, Il-Seok; Ma, Seong-Min; Kim, Hyeon-Soo; Kim, Jin-Woong; Kim, DoOh; Cross, Andrew

2013-03-01

The migration to a 3D implementation for NAND flash devices is seen as the leading contender to replace traditional planar NAND architectures. However the strategy of replacing shrinking design rules with greater aspect ratios is not without its own set of challenges. The yield-limiting defect challenges for the planar NAND front end were primarily bridges, protrusions and residues at the bottom of the gates, while the primary challenges for front end 3D NAND is buried particles, voids and bridges in the top, middle and bottom of high aspect ratio structures. Of particular interest are the yield challenges in the channel hole process module and developing an understanding of the contribution of litho and etch defectivity for this challenging new integration scheme. The key defectivity and process challenges in this module are missing, misshapen channel holes or under-etched channel holes as well as reducing noise sources related to other none yield limiting defect types and noise related to the process integration scheme. These challenges are expected to amplify as the memory density increases. In this study we show that a broadband brightfield approach to defect monitoring can be uniquely effective for the channel hole module. This approach is correlated to end-of-line (EOL) Wafer Bin Map for verification of capability.

Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology

NASA Astrophysics Data System (ADS)

Parisi, P.; Mani, A.; Perry-Sullivan, C.; Kopp, J.; Simpson, G.; Renis, M.; Padovani, M.; Severgnini, C.; Piacentini, P.; Piazza, P.; Beccalli, A.

2009-12-01

After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

A Case Study on Neural Inspired Dynamic Memory Management Strategies for High Performance Computing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vineyard, Craig Michael; Verzi, Stephen Joseph

As high performance computing architectures pursue more computational power there is a need for increased memory capacity and bandwidth as well. A multi-level memory (MLM) architecture addresses this need by combining multiple memory types with different characteristics as varying levels of the same architecture. How to efficiently utilize this memory infrastructure is an unknown challenge, and in this research we sought to investigate whether neural inspired approaches can meaningfully help with memory management. In particular we explored neurogenesis inspired re- source allocation, and were able to show a neural inspired mixed controller policy can beneficially impact how MLM architectures utilizemore » memory.« less

Cardiac autonomic function and hot flashes among perimenopausal and postmenopausal women.

PubMed

Gibson, Carolyn J; Mendes, Wendy Berry; Schembri, Michael; Grady, Deborah; Huang, Alison J

2017-07-01

Abnormalities in autonomic function are posited to play a pathophysiologic role in menopausal hot flashes. We examined relationships between resting cardiac autonomic activity and hot flashes in perimenopausal and postmenopausal women. Autonomic function was assessed at baseline and 12 weeks among perimenopausal and postmenopausal women (n = 121, mean age 53 years) in a randomized trial of slow-paced respiration for hot flashes. Pre-ejection period (PEP), a marker of sympathetic activation, was measured with impedance cardiography. Respiratory sinus arrhythmia (RSA), a marker of parasympathetic activation, was measured with electrocardiography. Participants self-reported hot flash frequency and severity in 7-day symptom diaries. Analysis of covariance models were used to relate autonomic function and hot flash frequency and severity at baseline, and to relate changes in autonomic function to changes in hot flash frequency and severity over 12 weeks, adjusting for age, body mass index, and intervention assignment. PEP was not associated with hot flash frequency or severity at baseline or over 12 weeks (P > 0.05 for all). In contrast, there was a trend toward greater frequency of moderate-to-severe hot flashes with higher RSA at baseline (β = 0.43, P = 0.06), and a positive association between change in RSA and change in frequency of moderate-to-severe hot flashes over 12 weeks (β = 0.63, P = 0.04). Among perimenopausal and postmenopausal women with hot flashes, variations in hot flash frequency and severity were not explained by variations in resting sympathetic activation. Greater parasympathetic activation was associated with more frequent moderate-to-severe hot flashes, which may reflect increased sensitivity to perceiving hot flashes.

Pulsed photoacoustic detection of flash-induced oxygen evolution from intact leaves and its oscillations

PubMed Central

Canaani, Ora; Malkin, Shmuel; Mauzerall, David

1988-01-01

Photoacoustic signals from intact leaves, produced upon excitation with single-turnover flashes, were shown to be dependent on their position in the flash sequence. Compared to the signal obtained from the first flash, all the others were time-shifted and had increased amplitudes. The signal from the third flash had the largest deviation, whereas that from the second flash deviated only minimally. The amplitude difference of the signals relative to that from the first flash was measured at a convenient time point (5 ms) and showed oscillations of period 4, similar to the O2-evolution pattern from algae. These oscillations were strongly damped, tending to a steady state from about the seventh flash on. The extra photoacoustic signal (relative to the first flash) was shown to be inhibited by 3-(3,4-dichlorophenyl)-1,1-dimethylurea, heat treatment, or water infiltration. Its change with flash number, its saturation with increasing flash energy, and the above inhibition criteria indicate that it originates in pulsed O2 evolution. The sound wave produced by the first flash, however, arose by a photothermal mechanism only, as shown by its linear dependence on the flash intensity and insensitivity to the above treatments. The above flash pattern demonstrates that the photocycle of the S states (i.e., positive charge accumulation before two water molecules can be oxidized in a concerted way to produce molecular oxygen) occurs in intact leaves. It proves the applicability of the photoacoustic method for mechanistic studies of O2 evolution in leaves under physiological conditions. Water content of leaves is readily measured by this method. Images PMID:16593952

Understanding the complex relationships underlying hot flashes: a Bayesian network approach.

PubMed

Smith, Rebecca L; Gallicchio, Lisa M; Flaws, Jodi A

2018-02-01

The mechanism underlying hot flashes is not well-understood, primarily because of complex relationships between and among hot flashes and their risk factors. We explored those relationships using a Bayesian network approach based on a 2006 to 2015 cohort study of hot flashes among 776 female residents, 45 to 54 years old, in the Baltimore area. Bayesian networks were fit for each outcome (current hot flashes, hot flashes before the end of the study, hot flash severity, hot flash frequency, and age at first hot flashes) separately and together with a list of risk factors (estrogen, progesterone, testosterone, body mass index and obesity, race, income level, education level, smoking history, drinking history, and activity level). Each fitting was conducted separately on all women and only perimenopausal women, at enrollment and 4 years after enrollment. Hormone levels, almost always interrelated, were the most common variable linked to hot flashes; hormone levels were sometimes related to body mass index, but were not directly related to any other risk factors. Smoking was also frequently associated with increased likelihood of severe symptoms, but not through an antiestrogenic pathway. The age at first hot flashes was related only to race. All other factors were either not related to outcomes or were mediated entirely by race, hormone levels, or smoking. These models can serve as a guide for design of studies into the causal network underlying hot flashes.

Towards spatially distributed flood forecasts in flash flood prone areas: application to the supervision of a road network in the South of France

NASA Astrophysics Data System (ADS)

Naulin, Jean-Philippe; Payrastre, Olivier; Gaume, Eric; Delrieu, Guy

2013-04-01

Accurate flood forecasts are crucial for an efficient flood event management. Until now, hydro-meteorological forecasts have been mainly used for early-warnings in France (Meteorological and flood vigilance maps) or over the world (Flash-flood guidances). These forecasts are generally limited to the main streams covered by the flood forecasting services or to specific watersheds with particular assets like check dams which are in most cases well gauged river sections, leaving aside large parts of the territory. A distributed hydro-meteorological forecasting approach will be presented, able to take advantage of the high spatial and temporal resolution rainfall estimates that are now available to provide information at ungauged sites. The proposed system aiming at detecting road inundation risks had been initially developed and tested in areas of limited size. Its extension to a whole region (the Gard region in the South of France) will be presented, including over 2000 crossing points between rivers and roads and its validation against a large data set of actually reported road inundations observed during recent flash-flood events. These first validation results appear promising. Such a tool would provide the necessary information for flood event management services to identify the areas at risk and to take the appropriate safety and rescue measures: pre-positioning of rescue means, stopping of the traffic on exposed roads, determination of safe accesses or evacuation routes. Moreover, beyond the specific application to the supervision of a road network, this work provides also results concerning the performances of hydro-meteorological forecasts for ungauged headwaters.

The ins and outs of caulking

Treesearch

Charles Carll

2006-01-01

Effective water management involves understanding the roles of siding, trim, fenestration units, flashing, and (where appropriate) caulk seals and how these entities interface with each other. Where caulk seals are used, their geometry and dimensions are important to joint performance, as is the care with which they are executed. In selection of caulking material,...

Hot Flashes

MedlinePlus

... report menopausal hot flashes than do women of European descent. Hot flashes are less common in women of Japanese and Chinese descent than in white European women. Complications Nighttime hot flashes (night sweats) can ...

Helium shell flashes and evolution of accreting white dwarfs

NASA Astrophysics Data System (ADS)

Fujimoto, M. Y.; Sugimoto, D.

1982-06-01

The evolution of accreting white dwarfs is investigated from the onset of accretion through the helium shell flash. Properties of the helium shell flashes are studied by means of a generalized theory of shell flash and by numerical computations, and it is found that the shell flash grows up to the strength of a supernova explosion when the mass of the helium zone is large enough on a massive white dwarf. Although accretion onto a hot white dwarf causes a weaker shell flash than those onto cool ones, a strong tendency exists for the strength to be determined mainly by the accretion rate. For fast accretion, the shell flashes are weak and triggered recurrently, while for slow accretion the helium shell flash, once triggered, develops into a detonation supernova.

Circulating interleukin-8 and tumor necrosis factor-α are associated with hot flashes in healthy postmenopausal women.

PubMed

Huang, Wan-Yu; Hsin, I-Lun; Chen, Dar-Ren; Chang, Chia-Chu; Kor, Chew-Teng; Chen, Ting-Yu; Wu, Hung-Ming

2017-01-01

Hot flashes have been postulated to be linked to systemic inflammation. This study aimed to investigate the relationship between hot flashes, pro-inflammatory factors, and leukocytes in healthy, non-obese postmenopausal women. In this cross-sectional study, a total of 202 women aged 45-60 years were stratified into one of four groups according to their hot-flash status: never experienced hot flashes (Group N), mild hot flashes (Group m), moderate hot flashes (Group M), and severe hot flashes (Group S). Variables measured in this study included clinical parameters, hot flash experience, leukocytes, and fasting plasma levels of nine circulating cytokines/chemokines measured by using multiplex assays. Multiple linear regression analysis was used to evaluate the associations of hot flashes with these pro-inflammatory factors. The study was performed in a hospital medical center. The mean values of leukocyte number were not different between these four groups. The hot flash status had a positive tendency toward increased levels of circulating IL-6 (P-trend = 0.049), IL-8 (P-trend < 0.001), TNF-α (P-trend = 0.008), and MIP1β (P-trend = 0.04). Multivariate linear regression analysis revealed that hot-flash severity was significantly associated with IL-8 (P-trend < 0.001) and TNFα (P-trend = 0.007) among these nine cytokines/chemokines after adjustment for age, menopausal duration, BMI and FSH. Multivariate analysis further revealed that severe hot flashes were strongly associated with a higher IL-8 (% difference, 37.19%; 95% confidence interval, 14.98,63.69; P < 0.001) and TNFα (51.27%; 6.64,114.57; P < 0.05). The present study provides evidence that hot flashes are associated with circulating IL-8 and TNF-α in healthy postmenopausal women. It suggests that hot flashes might be related to low-grade systemic inflammation.

Expectancy after the first treatment and response to acupuncture for menopausal hot flashes.

PubMed

Ee, Carolyn C; Thuraisingam, Sharmala; Pirotta, Marie V; French, Simon D; Xue, Charlie C; Teede, Helena J

2017-01-01

Evidence on the impact of expectancy on acupuncture treatment response is conflicting. This secondary analysis of a randomized sham-controlled trial on acupuncture for menopausal hot flashes investigated whether treatment expectancy score was associated with hot flash score at end-of-treatment. Secondary analyses investigated whether there were associations between other pre-specified factors and hot flash score. Women experiencing moderately-severe hot flashes were randomized to receive 10 sessions of real or sham acupuncture over eight weeks. Hot flash score was collected using a seven-day hot flash diary, and expectancy using the modified Credibility and Expectancy Questionnaire immediately after the first treatment. Linear mixed-effects models with random intercepts were used to identify associations between expectancy score and hot flash score at end-of-treatment. Regression was also used to identify associations between pre-specified factors of interest and hot flash score. Because there was no difference between real and sham acupuncture for the primary outcome of hot flash score, both arms were combined in the analysis. 285 women returned the Credibility and Expectancy Questionnaire, and 283 women completed both expectancy measures. We found no evidence for an association between expectancy and hot flash score at end-of-treatment for individual cases in either acupuncture or sham group. Hot flash scores at end-of-treatment were 8.1 (95%CI, 3.0 to 13.2; P = 0.002) points lower in regular smokers compared to those who had never smoked, equivalent to four fewer moderate hot flashes a day. In our study of acupuncture for menopausal hot flashes, higher expectancy after the first treatment did not predict better treatment outcomes. Future research may focus on other determinants of outcomes in acupuncture such as therapist attention. The relationship between smoking and hot flashes is poorly understood and needs further exploration.

Circulating interleukin-8 and tumor necrosis factor-α are associated with hot flashes in healthy postmenopausal women

PubMed Central

Huang, Wan-Yu; Hsin, I-Lun; Chen, Dar-Ren; Chang, Chia-Chu; Kor, Chew-Teng; Chen, Ting-Yu

2017-01-01

Introduction Hot flashes have been postulated to be linked to systemic inflammation. This study aimed to investigate the relationship between hot flashes, pro-inflammatory factors, and leukocytes in healthy, non-obese postmenopausal women. Participants and design In this cross-sectional study, a total of 202 women aged 45–60 years were stratified into one of four groups according to their hot-flash status: never experienced hot flashes (Group N), mild hot flashes (Group m), moderate hot flashes (Group M), and severe hot flashes (Group S). Variables measured in this study included clinical parameters, hot flash experience, leukocytes, and fasting plasma levels of nine circulating cytokines/chemokines measured by using multiplex assays. Multiple linear regression analysis was used to evaluate the associations of hot flashes with these pro-inflammatory factors. Settings The study was performed in a hospital medical center. Results The mean values of leukocyte number were not different between these four groups. The hot flash status had a positive tendency toward increased levels of circulating IL-6 (P-trend = 0.049), IL-8 (P-trend < 0.001), TNF-α (P-trend = 0.008), and MIP1β (P-trend = 0.04). Multivariate linear regression analysis revealed that hot-flash severity was significantly associated with IL-8 (P-trend < 0.001) and TNFα (P-trend = 0.007) among these nine cytokines/chemokines after adjustment for age, menopausal duration, BMI and FSH. Multivariate analysis further revealed that severe hot flashes were strongly associated with a higher IL-8 (% difference, 37.19%; 95% confidence interval, 14.98,63.69; P < 0.001) and TNFα (51.27%; 6.64,114.57; P < 0.05). Conclusion The present study provides evidence that hot flashes are associated with circulating IL-8 and TNF-α in healthy postmenopausal women. It suggests that hot flashes might be related to low-grade systemic inflammation. PMID:28846735

A first look at global flash drought: long term change and short term predictability

NASA Astrophysics Data System (ADS)

Yuan, Xing; Wang, Linying; Ji, Peng

2017-04-01

"Flash drought" became popular after the unexpected 2012 central USA drought, mainly due to its rapid development, low predictability and devastating impacts on water resources and crop yields. A pilot study by Mo and Lettenmaier (2015) found that flash drought, based on a definition of concurrent heat extreme, soil moisture deficit and evapotranspiration (ET) enhancement at pentad scale, were in decline over USA during recent 100 years. Meanwhile, a recent work indicated that the occurrence of flash drought in China was doubled during the past 30 years, where a severe flash drought in the summer of 2013 ravaged 13 provinces in southern China. As global warming increases the frequency of heat waves and accelerates the hydrological cycle, the flash drought is expected to increase in general, but its trend might also be affected by interannual to decadal climate oscillations. To consolidate the hotspots of flash drought and the effects of climate change on flash drought, a global inventory is being conducted by using multi-source observations (in-situ, satellite and reanalysis), CMIP5 historical simulations and future projections under different forcing scenarios, as well as global land surface hydrological modeling for key variables including surface air temperature, soil moisture and ET. In particular, a global picture of the flash drought distribution, the contribution of naturalized and anthropogenic forcings to global flash drought change, and the risk of global flash drought in the future, will be presented. Besides investigating the long-term change of flash drought, providing reliable early warning is also essential to developing adaptation strategies. While regional drought early warning systems have been emerging in recent decade, forecasting of flash drought is still at an exploratory stage due to limited understanding of flash drought predictability. Here, a set of sub-seasonal to seasonal (S2S) hindcast datasets are being used to assess the short term predictability of flash drought via a perfect model assumption.

Muzzle flash issues related to the Waco FLIR analysis

NASA Astrophysics Data System (ADS)

Grant, Barbara G.; Hardy, David T.

2001-09-01

The controversy surrounding the origin of flashes on the Mt. Carmel FLIR videotape acquired on April 19, 1993, is introduced. The characteristics of muzzle flash are reviewed. A comparative weapons description is offered. The temporal, spatial, and radiance characteristics of thermal infrared muzzle flash are addressed. Data acquired from a field experiment are presented. The authors conclude that the spatial characteristics of muzzle flash enable its detection by equipment such as the FLIR in use at Mt. Carmel on April 19, 1993; that while flashes obtained in the field appear highly radiant, measurements are necessary to quantify their values; and that the temporal behavior of muzzle flash deserves further study.

Initial Breakdown Pulse Parameters in Intracloud and Cloud-to-Ground Lightning Flashes

NASA Astrophysics Data System (ADS)

Smith, E. M.; Marshall, T. C.; Karunarathne, S.; Siedlecki, R.; Stolzenburg, M.

2018-02-01

This study analyzes the largest initial breakdown (IB) pulse in flashes from four storms in Florida; data from three sensor arrays are used. The range-normalized, zero-to-peak amplitude of the largest IB pulse was determined along with its altitude, duration, and timing within each flash. Appropriate data were available for 40 intracloud (IC) and 32 cloud-to-ground (CG) flashes. Histograms of amplitude of the largest IB pulse by flash type were similar, with mean (median) values of 1.49 (1.05) V/m for IC flashes and -1.35 (-0.87) V/m for CG flashes. The largest IB pulse in 30 IC flashes showed a weak inverse relation between pulse amplitude and altitude. Amplitude of the largest IB pulse for 25 CG flashes showed no altitude correlation. Duration of the largest IB pulse in ICs averaged twice as long as in CGs (96 μs versus 46 μs), and all of the CG durations were <100 μs. Among the ICs, there is a positive relation between largest IB pulse duration and amplitude; the linear correlation coefficient is 0.385 with outliers excluded. The largest IB pulse in IC flashes typically occurred at a longer time after the first IB pulse (average 4.1 ms) than was the case in CG flashes (average 0.6 ms). In both flash types, the largest IB pulse was the first IB pulse in about 30% of the cases. In one storm all 42 IC flashes with triggered data had IB pulses.

Reconstruction of Axial Energy Deposition in Magnetic Liner Inertial Fusion Based on PECOS Shadowgraph Unfolds Using the AMR Code FLASH

NASA Astrophysics Data System (ADS)

Adams, Marissa; Jennings, Christopher; Slutz, Stephen; Peterson, Kyle; Gourdain, Pierre; U. Rochester-Sandia Collaboration

2017-10-01

Magnetic Liner Inertial Fusion (MagLIF) experiments incorporate a laser to preheat a deuterium filled capsule before compression via a magnetically imploding liner. In this work, we focus on the blast wave formed in the fuel during the laser preheat component of MagLIF, where approximately 1kJ of energy is deposited in 3ns into the capsule axially before implosion. To model blast waves directly relevant to experiments such as MagLIF, we inferred deposited energy from shadowgraphy of laser-only experiments preformed at the PECOS target chamber using the Z-Beamlet laser. These energy profiles were used to initialize 2-dimensional simulations using by the adaptive mesh refinement code FLASH. Gradients or asymmetries in the energy deposition may seed instabilities that alter the fuel's distribution, or promote mix, as the blast wave interacts with the liner wall. The AMR capabilities of FLASH allow us to study the development and dynamics of these instabilities within the fuel and their effect on the liner before implosion. Sandia Natl Labs is managed by NTES of Sandia, LLC., a subsidiary of Honeywell International, Inc, for the U.S. DOEs NNSA under contract DE-NA0003525.

Cloud-to-ground lightning and surface rainfall in warm-season Florida thunderstorms

USGS Publications Warehouse

Gungle, B.; Krider, E.P.

2006-01-01

Relationships between cloud-to-ground (CG) lightning and surface rainfall have been examined in nine isolated, warm-season thunderstorms on the east coast of central Florida. CG flashes and the associated rain volumes were measured as a function of time in storm-centered reference frames that followed each storm over a network of rain gauges. Values of the storm-average rain volume per CG flash ranged from 0.70 ?? 104 to 6.4 ?? 104 m3/CG flash, with a mean (and standard deviation) of 2.6 ?? 104 ?? 2.1 ?? 104 m3/CG flash. Values of the rain volume concurrent with CG flashes ranged from 0.11 ?? 104 to 4.9 ?? 104 m3/CG flash with a mean of 2.1 ?? 104 ?? 2.0 ?? 104 m3/CG flash. The lag-time between the peak CG flash rate and the peak rainfall rate (using 5 min bins), and the results of a lag correlation analysis, show that surface rainfall tends to follow the lightning (positive lag) by up to 20 min in six storms. In one storm the rainfall preceded the lightning by 5 min, and two storms had nonsignificant lags. Values of the lagged rain volume concurrent with CG flashes ranged from 0.43 ?? 104 to 4.9 ?? 104 m3/CG flash, and the mean was 1.9 ?? 104 ?? 1.7 ?? 104 m3/CG flash. For the five storms that produced 12 or more flashes and had significant lags, a plot of the optimum lag time versus the total number of CG flashes shows a linear trend (R2 = 0.56). The number of storms is limited, but the lag results do indicate that large storms tend to have longer lags. A linear fit to the lagged rain volume vs. the number of concurrent CG flashes has a slope of 1.9 ?? 104 m3/CG flash (R2 = 0.83). We conclude that warm-season Florida thunderstorms produce a roughly constant rain volume per CG flash and that CG lightning can be used to estimate the location and intensity of convective rainfall in that weather regime. Copyright 2006 by the American Geophysical Union.

Non-volatile main memory management methods based on a file system.

PubMed

Oikawa, Shuichi

2014-01-01

There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

Forensic Analysis of Window’s(Registered) Virtual Memory Incorporating the System’s Page-File

DTIC Science & Technology

2008-12-01

Management and Budget, Paperwork Reduction Project (0704-0188) Washington DC 20503. 1. AGENCY USE ONLY (Leave blank) 2. REPORT DATE December...data in a meaningful way. One reason for this is how memory is managed by the operating system. Data belonging to one process can be distributed...way. One reason for this is how memory is managed by the operating system. Data belonging to one process can be distributed arbitrarily across

Brain blood flow and cardiovascular responses to hot flashes in postmenopausal women

PubMed Central

Lucas, Rebekah A. I.; Ganio, Matthew S.; Pearson, James; Crandall, Craig G.

2012-01-01

Objective This study tested two related hypotheses: 1) that brain blood flow is reduced during the postmenopausal hot flash; and, 2) the magnitude of this reduction in brain blood flow is greater during hot flashes where blood pressure is reduced. Methods Eleven healthy, normotensive, postmenopausal women rested in a temperature-controlled laboratory (~25°C) for approximately 120 minutes while waiting for a hot flash to occur. The onset of a hot flash was objectively identified by an abrupt increase in sternal sweat rate (capacitance hygrometry). Middle cerebral artery blood velocity (MCAv, transcranial Doppler) and mean arterial pressure (Finometer®) were measured continuously. Each hot flash was divided into 8 equal segments and the segment with the largest reduction in MCAv and mean arterial pressure identified for each hot flash. Results Twenty-five hot flashes occurred during the experimental sessions (lasting 6.2 ± 2.8 min, 3 ± 1 hot flashes per participant). Seventy-six percent of hot flashes were accompanied by a clear reduction (greater than 5%) in brain blood flow. For all hot flashes, the average maximum decrease in MCAv was 12 ± 9% (7 ± 6 cm.s−1). This value did not correlate with corresponding changes in mean arterial pressure (R=0.36). Conclusion These findings demonstrate that hot flashes are often accompanied by clear reductions in brain blood flow that do not correspond with acute reductions in mean arterial blood pressure. PMID:23435027

Are menopausal hot flashes an evolutionary byproduct of postpartum warming?

PubMed

Sievert, Lynnette Leidy; Masley, Allison

2015-04-01

Hot flashes are commonly associated with menopause, and some researchers have questioned whether the widespread phenomenon may somehow be adaptive. It has been hypothesized that hot flashes were selected to occur during the hypoestrogenic postpartum period as a mechanism to warm infants. The purpose of this study was to test whether postpartum hot flashes are similar to hot flashes associated with menopause and whether postpartum hot flashes are concordant with breast-feeding episodes. Women who gave birth within the past year (n = 20) and a comparison group of women who had not given birth in the past 2 years (n = 14) participated in interviews and anthropometric measures. All wore ambulatory skin conductance monitors for a mean of 6.5 hours during afternoons and early evenings. New mothers also recorded breast-feeding episodes. Objectively measured and subjectively reported hot flashes were compared between groups and in relation to breast-feeding and other variables. Age of infants ranged from 4 days to 11 months. New mothers were more likely to report feeling warmer than the comparison group (100% vs 7%) but were not significantly more likely to demonstrate hot flashes (35% vs 50%) or to report hot flashes (30% vs 21%) during the study period. Of 75 breast-feeding episodes, only 4% were concurrent with an objective hot flash, and only 9% were concurrent with a subjective hot flash. This study does not support the hypothesis that menopausal-like hot flashes evolved to warm infants during the postpartum period.

Dementia

MedlinePlus

... living. Functions affected include memory, language skills, visual perception, problem solving, self-management, and the ability to ... living. Functions affected include memory, language skills, visual perception, problem solving, self-management, and the ability to ...

Combining criteria for delineating lahar- and flash-flood-prone hazard and risk zones for the city of Arequipa, Peru

NASA Astrophysics Data System (ADS)

Thouret, J.-C.; Enjolras, G.; Martelli, K.; Santoni, O.; Luque, J. A.; Nagata, M.; Arguedas, A.; Macedo, L.

2013-02-01

Arequipa, the second largest city in Peru, is exposed to many natural hazards, most notably earthquakes, volcanic eruptions, landslides, lahars (volcanic debris flows), and flash floods. Of these, lahars and flash floods, triggered by occasional torrential rainfall, pose the most frequently occurring hazards that can affect the city and its environs, in particular the areas containing low-income neighbourhoods. This paper presents and discusses criteria for delineating areas prone to flash flood and lahar hazards, which are localized along the usually dry (except for the rainy season) ravines and channels of the Río Chili and its tributaries that dissect the city. Our risk-evaluation study is based mostly on field surveys and mapping, but we also took into account quality and structural integrity of buildings, available socio-economic data, and information gained from interviews with risk-managers officials. In our evaluation of the vulnerability of various parts of the city, in addition to geological and physical parameters, we also took into account selected socio-economic parameters, such as the educational and poverty level of the population, unemployment figures, and population density. In addition, we utilized a criterion of the "isolation factor", based on distances to access emergency resources (hospitals, shelters or safety areas, and water) in each city block. By combining the hazard, vulnerability and exposure criteria, we produced detailed risk-zone maps at the city-block scale, covering the whole city of Arequipa and adjacent suburbs. Not surprisingly, these maps show that the areas at high risk coincide with blocks or districts with populations at low socio-economic levels. Inhabitants at greatest risk are the poor recent immigrants from rural areas who live in unauthorized settlements in the outskirts of the city in the upper parts of the valleys. Such settlements are highly exposed to natural hazards and have little access to vital resources. Our study provides good rationale for the risk zoning of the city, which in turn may be used as an educational tool for better understanding the potential effects of natural hazards and the exposure of the population residing in and around Arequipa. We hope that our work and the risk-zonation maps will provide the impetus and basis for risk-management authorities of the Municipality and the regional government of Arequipa to enforce existing regulations in building in hazardous zones and to adopt an effective long-term strategy to reduce risks from lahar, flash flood, and other natural hazards.

Post-Flash Validation of the new ACS/WFC Subarrays

NASA Astrophysics Data System (ADS)

Bellini, A.; Grogin, N. A.; Lim, P. L.; Golimowski, D.

2017-05-01

We made use of the new ACS/WFC subarray images of CAL-14410, taken taken with a large range of flash exposure times (0.1-30 seconds), to probe the temporal stability of the reference flash file and to validate the current post-flash correction pipeline of CALACS and ACS DESTRIPE PLUS on the new subarray modes. No statistically-significant deviations are found between the new post-flashed subarray exposures and the flash reference file, indicating that the LED lamp used to post-flash ACS images has been stable over several years. The current calibration pipelines (both CALACS and ACS DESTRIPE PLUS can be successfully used with the new subarray modes.

Flash Platform Examination

DTIC Science & Technology

2011-03-01

than would be performed in software”[108]. Uro Tinic, one of the Flash player’s engineers, further clarifies exactly what Flash player 10 hardware...www.adobe.com/products/flashplayer/features/ (Access date: 28 Sep 2009). [109] Uro , T. What Does GPU Acceleration Mean? (online), http...133] Shorten, A. (2009), Design to Development: Flash Catalyst to Flash Builder, In Proceedings of Adobe Max 2009, Los Angeles, CA. 142 DRDC

The Evolution and Structure of Extreme Optical Lightning Flashes.

PubMed

Peterson, Michael; Rudlosky, Scott; Deierling, Wiebke

2017-12-27

This study documents the composition, morphology, and motion of extreme optical lightning flashes observed by the Lightning Imaging Sensor (LIS). The furthest separation of LIS events (groups) in any flash is 135 km (89 km), the flash with the largest footprint had an illuminated area of 10,604 km 2 , and the most dendritic flash has 234 visible branches. The longest-duration convective LIS flash lasted 28 s and is overgrouped and not physical. The longest-duration convective-to-stratiform propagating flash lasted 7.4 s, while the longest-duration entirely stratiform flash lasted 4.3 s. The longest series of nearly consecutive groups in time lasted 242 ms. The most radiant recorded LIS group (i.e., "superbolt") is 735 times more radiant than the average group. Factors that impact these optical measures of flash morphology and evolution are discussed. While it is apparent that LIS can record the horizontal development of the lightning channel in some cases, radiative transfer within the cloud limits the flash extent and level of detail measured from orbit. These analyses nonetheless suggest that lightning imagers such as LIS and Geostationary Lightning Mapper can complement ground-based lightning locating systems for studying physical lightning phenomena across large geospatial domains.

Determination of flash point in air and pure oxygen using an equilibrium closed bomb apparatus.

PubMed

Kong, Dehong; am Ende, David J; Brenek, Steven J; Weston, Neil P

2003-08-29

The standard closed testers for flash point measurements may not be feasible for measuring flash point in special atmospheres like oxygen because the test atmosphere cannot be maintained due to leakage and the laboratory safety can be compromised. To address these limitations we developed a new "equilibrium closed bomb" (ECB). The ECB generally gives lower flash point values than standard closed cup testers as shown by the results of six flammable liquids. The present results are generally in good agreement with the values calculated from the reported lower flammability limits and the vapor pressures. Our measurements show that increased oxygen concentration had little effect on the flash points of the tested flammable liquids. While generally regarded as non-flammable because of the lack of observed flash point in standard closed cup flash point testers, dichloromethane is known to form flammable mixtures. The flash point of dichloromethane in oxygen measured in the ECB is -7.1 degrees C. The flash point of dichloromethane in air is dependent on the type and energy of the ignition source. Further research is being carried out to establish the relationship between the flash point of dichloromethane and the energy of the ignition source.

Risk Factors for Extended Duration and Timing of Peak Severity of Hot Flashes

PubMed Central

Gallicchio, Lisa; Miller, Susan R.; Zacur, Howard A.; Flaws, Jodi A.

2016-01-01

Objective To identify risk factors associated with the duration of hot flashes and the time of peak hot flash severity in mid-life women. Methods A cohort of 647 women reporting hot flashes were followed for 1–7 years, with survey data and hormone measurements. Survival analysis determined the association of risk factors with the duration of hot flashes. Linear regression determined the association of risk factors with the time of peak severity. Final models were determined through stepwise model selection. Results Average hot flash duration was 2.5 years (range: 1–33), with peak severity on average at 2.96 years (range: 1–20). Duration of hot flashes was associated with race, education, menopause status, smoking history, BMI, alcohol consumption, leisure activity levels, and levels of estradiol and progesterone. In the final model, only race, alcohol consumption, leisure activity, and menopause were retained. White women had significantly shorter hot flash durations than non-white women. Women consuming at least 12 alcoholic drinks in the previous year had a significantly shorter duration of hot flashes with a smaller effect of hot flash duration on increasing in time to peak severity compared to those who consumed less than 12 alcoholic drinks in that year. Higher serum progesterone levels were associated with later peak severity if the duration of the hot flashes was less than 2 years and an earlier peak severity otherwise. Conclusions These results suggest that some behaviors (such as moderate alcohol consumption) are associated with shorter durations of hot flashes, and that progesterone was associated with the dynamics of hot flash severity. PMID:27149066

Metabolic Activity in the Insular Cortex and Hypothalamus Predicts Hot Flashes: An FDG-PET Study

PubMed Central

Deckersbach, Thilo; Lin, Nancy U.; Makris, Nikos; Skaar, Todd C.; Rauch, Scott L.; Dougherty, Darin D.; Hall, Janet E.

2012-01-01

Context: Hot flashes are a common side effect of adjuvant endocrine therapies (AET; leuprolide, tamoxifen, aromatase inhibitors) that reduce quality of life and treatment adherence in breast cancer patients. Because hot flashes affect only some women, preexisting neurobiological traits might predispose to their development. Previous studies have implicated the insula during the perception of hot flashes and the hypothalamus in thermoregulatory dysfunction. Objective: The aim of the study was to understand whether neurobiological factors predict hot flashes. Design: [18F]-Fluorodeoxyglucose (FDG) positron emission tomography (PET) brain scans coregistered with structural magnetic resonance imaging were used to determine whether metabolic activity in the insula and hypothalamic thermoregulatory and estrogen-feedback regions measured before and in response to AET predict hot flashes. Findings were correlated with CYP2D6 genotype because of CYP2D6 polymorphism associations with tamoxifen-induced hot flashes. Outcome Measures: We measured regional cerebral metabolic rate of glucose uptake (rCMRglu) in the insula and hypothalamus on FDG-PET. Results: Of 18 women without hot flashes who began AET, new-onset hot flashes were reported by 10 (55.6%) and were detected objectively in nine (50%) participants. Prior to the use of all AET, rCMRglu in the insula (P ≤ 0.01) and hypothalamic thermoregulatory (P = 0.045) and estrogen-feedback (P = 0.007) regions was lower in women who reported developing hot flashes. In response to AET, rCMRglu was further reduced in the insula in women developing hot flashes (P ≤ 0.02). Insular and hypothalamic rCMRglu levels were lower in intermediate than extensive CYP2D6 metabolizers. Conclusions: Trait neurobiological characteristics predict hot flashes. Genetic variability in CYP2D6 may underlie the neurobiological predisposition to hot flashes induced by AET. PMID:22723326

An unusual characteristic “flower-like” pattern: flash suppressor burns

PubMed Central

Gurcan, Altun

2012-01-01

The case on contact shots from firearms with a flash suppressor is rare. When a rifle fitted with a flash suppressor is fired, the emerging soot-laden gas in the barrel escapes from the slits of the flash suppressor. If the shot is contact or near contact, the flash suppressor will produce a characteristic “flower-like” pattern of seared, blackened zones around the entrance. This paper presents the injury pattern of the flash suppressor in a 29-year-old man who committed suicide with a G3 automatic infantry rifle. PMID:23935280

An unusual characteristic "flower-like" pattern: flash suppressor burns.

PubMed

Gurcan, Altun

2012-04-01

The case on contact shots from firearms with a flash suppressor is rare. When a rifle fitted with a flash suppressor is fired, the emerging soot-laden gas in the barrel escapes from the slits of the flash suppressor. If the shot is contact or near contact, the flash suppressor will produce a characteristic "flower-like" pattern of seared, blackened zones around the entrance. This paper presents the injury pattern of the flash suppressor in a 29-year-old man who committed suicide with a G3 automatic infantry rifle.

Circulating leptin and adiponectin are associated with insulin resistance in healthy postmenopausal women with hot flashes.

PubMed

Huang, Wan-Yu; Chang, Chia-Chu; Chen, Dar-Ren; Kor, Chew-Teng; Chen, Ting-Yu; Wu, Hung-Ming

2017-01-01

Hot flashes have been postulated to be linked to the development of metabolic disorders. This study aimed to evaluate the relationship between hot flashes, adipocyte-derived hormones, and insulin resistance in healthy, non-obese postmenopausal women. In this cross-sectional study, a total of 151 women aged 45-60 years were stratified into one of three groups according to hot-flash status over the past three months: never experienced hot flashes (Group N), mild-to-moderate hot flashes (Group M), and severe hot flashes (Group S). Variables measured in this study included clinical parameters, hot flash experience, fasting levels of circulating glucose, lipid profiles, plasma insulin, and adipocyte-derived hormones. Multiple linear regression analysis was used to evaluate the associations of hot flashes with adipocyte-derived hormones, and with insulin resistance. The study was performed in a hospital medical center. The mean (standard deviation) of body-mass index was 22.8(2.7) for Group N, 22.6(2.6) for Group M, and 23.5(2.4) for Group S, respectively. Women in Group S displayed statistically significantly higher levels of leptin, fasting glucose, and insulin, and lower levels of adiponectin than those in Groups M and N. Multivariate linear regression analysis revealed that hot-flash severity was significantly associated with higher leptin levels, lower adiponectin levels, and higher leptin-to-adiponectin ratio. Univariate linear regression analysis revealed that hot-flash severity was strongly associated with a higher HOMA-IR index (% difference, 58.03%; 95% confidence interval, 31.00-90.64; p < 0.001). The association between hot flashes and HOMA-IR index was attenuated after adjusting for leptin or adiponectin and was no longer significant after simultaneously adjusting for leptin and adiponectin. The present study provides evidence that hot flashes are associated with insulin resistance in postmenopausal women. It further suggests that hot flash association with insulin resistance is dependent on the combination of leptin and adiponectin variables.

Optimal flash rate and duty cycle for flashing visual indicators.

NASA Technical Reports Server (NTRS)

Markowitz, J.

1971-01-01

This experiment examined the ability of observers to determine, as quickly as possible, whether a visual indicator was steadily on or flashing. Six flash rates (periods) were combined factorially with three duty cycles (on-off ratios) to define 18 ?types' of intermittent signals. Experimental sessions were divided into six runs of 100 trials, each run utilizing one of the six flash rates. On any given trial in a run, the probability of a steady signal occurring was 0.5 and the probability of a flashing signal occurring was 0.5. A different duty cycle was employed daily for each experimental session. In all, 400 trials were devoted to each of the flash rates at each duty cycle. Accuracy and latency of response were the dependent variables of interest. The results show that the observers view the light for an interval of time appropriate to the expected flash rate and duty cycle; whether they judge the light to be steady or intermittent depends upon whether the light is extinguished during the predetermined waiting period. Adoption of this temporal criterion delays responding in comparison to those tasks involving responses to light onset. The decision or response criteria held by the observers are also sensitive to the parameters of the flashing light: observers become increasingly willing to call a flashing light ?steady' as flash duration increases.

Synchronized Electronic Shutter System (SESS) for Thermal Nondestructive Evaluation

NASA Technical Reports Server (NTRS)

Zalameda, Joseph N.

2001-01-01

The purpose of this paper is to describe a new method for thermal nondestructive evaluation. This method uses a synchronized electronic shutter system (SESS) to remove the heat lamp's influence on the thermal data during and after flash heating. There are two main concerns when using flash heating. The first concern is during the flash when the photons are reflected back into the camera. This tends to saturate the detectors and potentially introduces unknown and uncorrectable errors when curve fitting the data to a model. To address this, an electronically controlled shutter was placed over the infrared camera lens. Before firing the flash lamps, the shutter is opened to acquire the necessary background data for offset calibration. During flash heating, the shutter is closed to prevent the photons from the high intensity flash from saturating the camera's detectors. The second concern is after the flash heating where the lamps radiate heat after firing. This residual cooling introduces an unwanted transient thermal response into the data. To remove this residual effect, a shutter was placed over the flash lamps to block the infrared heat radiating from the flash head after heating. This helped to remove the transient contribution of the flash. The flash lamp shutters were synchronized electronically with the camera shutter. Results are given comparing the use of the thermal inspection with and without the shutter system.

Acupuncture as treatment of hot flashes and the possible role of calcitonin gene-related Peptide.

PubMed

Spetz Holm, Anna-Clara E; Frisk, Jessica; Hammar, Mats L

2012-01-01

The mechanisms behind hot flashes in menopausal women are not fully understood. The flashes in women are probably preceded by and actually initiated by a sudden downward shift in the set point for the core body temperature in the thermoregulatory center that is affected by sex steroids, β-endorphins, and other central neurotransmitters. Treatments that influence these factors may be expected to reduce hot flashes. Since therapy with sex steroids for hot flashes has appeared to cause a number of side effects and risks and women with hot flashes and breast cancer as well as men with prostate cancer and hot flashes are prevented from sex steroid therapy there is a great need for alternative therapies. Acupuncture affecting the opioid system has been suggested as an alternative treatment option for hot flashes in menopausal women and castrated men. The heat loss during hot flashes may be mediated by the potent vasodilator and sweat gland activator calcitonin gene-related peptide (CGRP) the concentration of which increases in plasma during flashes in menopausal women and, according to one study, in castrated men with flushes. There is also evidence for connections between the opioid system and the release of CGRP. In this paper we discuss acupuncture as a treatment alternative for hot flashes and the role of CGRP in this context.

A spatially collocated sound thrusts a flash into awareness

PubMed Central

Aller, Máté; Giani, Anette; Conrad, Verena; Watanabe, Masataka; Noppeney, Uta

2015-01-01

To interact effectively with the environment the brain integrates signals from multiple senses. It is currently unclear to what extent spatial information can be integrated across different senses in the absence of awareness. Combining dynamic continuous flash suppression (CFS) and spatial audiovisual stimulation, the current study investigated whether a sound facilitates a concurrent visual flash to elude flash suppression and enter perceptual awareness depending on audiovisual spatial congruency. Our results demonstrate that a concurrent sound boosts unaware visual signals into perceptual awareness. Critically, this process depended on the spatial congruency of the auditory and visual signals pointing towards low level mechanisms of audiovisual integration. Moreover, the concurrent sound biased the reported location of the flash as a function of flash visibility. The spatial bias of sounds on reported flash location was strongest for flashes that were judged invisible. Our results suggest that multisensory integration is a critical mechanism that enables signals to enter conscious perception. PMID:25774126

Application of adobe flash media to optimize jigsaw learning model on geometry material

NASA Astrophysics Data System (ADS)

Imam, P.; Imam, S.; Ikrar, P.

2018-05-01

This study aims to determine and describe the effectiveness of the application of adobe flash media for jigsaw learning model on geometry material. In this study, the modified jigsaw learning with adobe flash media is called jigsaw-flash model. This research was conducted in Surakarta. The research method used is mix method research with exploratory sequential strategy. The results of this study indicate that students feel more comfortable and interested in studying geometry material taught by jigsaw-flash model. In addition, students taught using the jigsaw-flash model are more active and motivated than the students who were taught using ordinary jigsaw models. This shows that the use of the jigsaw-flash model can increase student participation and motivation. It can be concluded that the adobe flash media can be used as a solution to reduce the level of student abstraction in learning mathematics.

Healthcare knowledge management through building and operationalising healthcare enterprise memory.

PubMed

Cheah, Y N; Abidi, S S

1999-01-01

In this paper we suggest that the healthcare enterprise needs to be more conscious of its vast knowledge resources vis-à-vis the exploitation of knowledge management techniques to efficiently manage its knowledge. The development of healthcare enterprise memory is suggested as a solution, together with a novel approach advocating the operationalisation of healthcare enterprise memories leading to the modelling of healthcare processes for strategic planning. As an example, we present a simulation of Service Delivery Time in a hospital's OPD.

46 CFR 35.20-30 - Flashing the rays of a searchlight or other blinding light-T/ALL.

Code of Federal Regulations, 2012 CFR

2012-10-01

... VESSELS OPERATIONS Navigation § 35.20-30 Flashing the rays of a searchlight or other blinding light—T/ALL. No person shall flash, or cause to be flashed, the rays of a search light or other blinding light... 46 Shipping 1 2012-10-01 2012-10-01 false Flashing the rays of a searchlight or other blinding...

46 CFR 35.20-30 - Flashing the rays of a searchlight or other blinding light-T/ALL.

Code of Federal Regulations, 2010 CFR

2010-10-01

... VESSELS OPERATIONS Navigation § 35.20-30 Flashing the rays of a searchlight or other blinding light—T/ALL. No person shall flash, or cause to be flashed, the rays of a search light or other blinding light... 46 Shipping 1 2010-10-01 2010-10-01 false Flashing the rays of a searchlight or other blinding...

46 CFR 35.20-30 - Flashing the rays of a searchlight or other blinding light-T/ALL.

Code of Federal Regulations, 2014 CFR

2014-10-01

... VESSELS OPERATIONS Navigation § 35.20-30 Flashing the rays of a searchlight or other blinding light—T/ALL. No person shall flash, or cause to be flashed, the rays of a search light or other blinding light... 46 Shipping 1 2014-10-01 2014-10-01 false Flashing the rays of a searchlight or other blinding...

46 CFR 35.20-30 - Flashing the rays of a searchlight or other blinding light-T/ALL.

Code of Federal Regulations, 2013 CFR

2013-10-01

... VESSELS OPERATIONS Navigation § 35.20-30 Flashing the rays of a searchlight or other blinding light—T/ALL. No person shall flash, or cause to be flashed, the rays of a search light or other blinding light... 46 Shipping 1 2013-10-01 2013-10-01 false Flashing the rays of a searchlight or other blinding...

46 CFR 35.20-30 - Flashing the rays of a searchlight or other blinding light-T/ALL.

Code of Federal Regulations, 2011 CFR

2011-10-01

... VESSELS OPERATIONS Navigation § 35.20-30 Flashing the rays of a searchlight or other blinding light—T/ALL. No person shall flash, or cause to be flashed, the rays of a search light or other blinding light... 46 Shipping 1 2011-10-01 2011-10-01 false Flashing the rays of a searchlight or other blinding...

Characteristics of flash initiations in a supercell cluster with tornadoes

NASA Astrophysics Data System (ADS)

Zheng, Dong; MacGorman, Donald R.

2016-01-01

Flash initiations within a supercell cluster during 10-11 May 2010 in Oklahoma were investigated based on observations from the Oklahoma Lightning Mapping Array and the Norman, Oklahoma, polarimetric radar (KOUN). The flash initiations at positions dominated by graupel, dry snow, small hail and crystals accounted for 44.3%, 44.1%, 8.0% and 3.0% of the total flashes, respectively. During the tornadic stage of the southern supercell in the cluster, flash initiations associated with graupel occupied the main body, the right flank and the forward flank of the supercell, while those associated with dry snow dominated the outskirts of the adjacent forward anvil, right anvil and rear anvil. The flash initiations associated with small hail were concentrated around the main updraft, particularly toward its front side. Highly dense flash initiations were located in the regions overlying the differential reflectivity (ZDR) arc and right anvil. The average initial height of the flashes decreased gradually from the rear to the front and from the right to the left flanks, while the height range over which initiations occurred reached a maximum at the front of the updraft. The flashes that were initiated in the adjacent forward anvils were largest on average, followed by those in the regions ahead of the updraft and near the ZDR arc. This study supports the concept of charge pockets and further deduces that the pockets in the right anvil are the most abundant and compact due to the frequent flash initiations, small-sized flashes and thin layers including flash initiations.

Phase II evaluation of S-adenosyl-L-methionine (SAMe) for the treatment of hot flashes.

PubMed

Kadakia, Kunal C; Loprinzi, Charles L; Atherton, Pamela J; Fee-Schroeder, Kelliann C; Sood, Amit; Barton, Debra L

2016-03-01

Hot flashes are a significant source of symptom burden that negatively impacts quality of life (QOL). For women who have contraindications to, or are unwilling to consider, estrogens or antidepressants for bothersome hot flashes, there are limited effective pharmacologic or complementary and alternative medicines. This single-arm phase II trial studied the efficacy of S-adenosyl-L-methionine (SAMe) for the treatment of hot flashes. Eligible women were required to have reported ≥14 hot flashes per week for ≥1 month. The patients were treated with SAMe at a dose of 400 mg twice daily to evaluate whether a reduction in hot flash score appeared to be better than the historical placebo response of approximately 25%. The women kept a daily hot flash diary during a baseline week and then daily during weeks 2-7. The primary endpoint was the change from baseline to week 7 in hot flash score and hot flash frequency. Secondary endpoints included toxicity analyses and the effect of SAMe on QOL. From October 28, 2010 to January 30, 2012, 43 women were treated with SAMe. The decrease in mean percent of baseline hot flash score and frequency was 35.4 and 32.6%, respectively. When compared to the historical placebo response of 25%, the effect of SAMe on hot flash score was not statistically significant (p = 0.09). Treatment was well tolerated with expected grade 1/2 gastrointestinal toxicity and no negative effect on QOL. The use of SAMe does not appear to significantly reduce hot flashes more than would be expected with a placebo.

Two types of flash drought over China and their connections with sub-seasonal to seasonal soil moisture drought

NASA Astrophysics Data System (ADS)

Wang, L.; Yuan, X.; Xie, Z.

2017-12-01

Flash drought has been receiving attention recently due to its rapid development and vast damage on crops in the growing season. Accompanied with heatwave and rainfall deficit, the soil moisture decreased rapidly in a short time and may lead to the failure of root water uptake and large-scale crops wither. There are two types of flash droughts according to the causes (Mo and Lettenmaier, 2016), i.e., heat wave flash drought and rainfall deficit flash drought. Here, based on pentad-mean surface air temperature and precipitation observations from over two thousand meteorological stations as well as soil moisture and ET estimations from three global reanalysis products, the characteristics and evolution of the two types of flash droughts over China are being explored. Heat wave flash drought is more likely to occur in humid and semi-humid areas, such as southern China, while rainfall deficit flash drought is more likely to occur in northern China. Unlike the traditional drought that persists for a few months to decades, the mean durations of both types of flash droughts are very short. We use monthly mean soil moisture to calculate sub-seasonal to seasonal (S2S) soil moisture drought, and compare its characteristics and preferred conditions such as the large-scale atmospheric circulation and oceanic anomaly for both types of flash droughts. The percentages of flash drought in different periods of S2S drought are also being explored to see the potential relationship between flash drought and S2S drought over different regions.

Temporal Binding Window of the Sound-Induced Flash Illusion in Amblyopia.

PubMed

Narinesingh, Cindy; Goltz, Herbert C; Wong, Agnes M F

2017-03-01

Amblyopia is a neurodevelopmental visual disorder caused by abnormal visual experience in childhood. In addition to known visual deficits, there is evidence for changes in audiovisual integration in amblyopia using explicit tasks. We examined audiovisual integration in amblyopia using an implicit task that is more relevant in a real-world context. A total of 11 participants with amblyopia and 16 controls were tested binocularly and monocularly on the sound-induced flash illusion, in which flashes and beeps are presented concurrently and the perceived number of flashes is influenced by the number of beeps. The task used 1 to 2 rapid peripheral flashes presented with 0 to 2 beeps, at 5 stimulus onset asynchronies, that is, beep (-200 milliseconds, -100 milliseconds) or flash leading (100 milliseconds, 200 milliseconds) or simultaneous (0 milliseconds). Participants reported the number of perceived flashes. Susceptibility was indicated by a "2 flashes" response to "fission" (1 flash, 2 beeps) or "1 flash" to "fusion" (2 flashes, 1 beep). For fission with the beep leading during binocular viewing, controls showed an expected decrease in illusion strength as stimulus onset asynchronies increased, whereas the illusion strength remained constant in participants with amblyopia, indicating a wider temporal binding window in amblyopia (P = 0.007). For fusion, participants with amblyopia showed reduced illusion strength during amblyopic eye viewing (P = 0.044) with the flash leading. Amblyopia is associated with the widening of the temporal binding window, specifically for fission when viewing binocularly with the beep leading. This suggests a developmental adaptation to delayed amblyopic eye visual processing to optimize audiovisual integration.

Onset conditions for flash sintering of UO 2

DOE PAGES

Raftery, Alicia M.; Pereira da Silva, João Gustavo; Byler, Darrin D.; ...

2017-06-22

In this paper, flash sintering was demonstrated on stoichiometric and non-stoichiometric uranium dioxide pellets at temperatures ranging from room temperature (26°C) up to 600°C. The onset conditions for flash sintering were determined for three stoichiometries (UO 2.00, UO 2.08, and UO 2.16) and analyzed against an established thermal runaway model. The presence of excess oxygen was found to enhance the flash sintering onset behavior of uranium dioxide, lowering the field required to flash and shortening the time required for a flash to occur. Finally, the results from this study highlight the effect of stoichiometry on the flash sintering behavior ofmore » uranium dioxide and will serve as the foundation for future studies on this material.« less

Onset conditions for flash sintering of UO2

NASA Astrophysics Data System (ADS)

Raftery, Alicia M.; Pereira da Silva, João Gustavo; Byler, Darrin D.; Andersson, David A.; Uberuaga, Blas P.; Stanek, Christopher R.; McClellan, Kenneth J.

2017-09-01

In this work, flash sintering was demonstrated on stoichiometric and non-stoichiometric uranium dioxide pellets at temperatures ranging from room temperature (26 °C) up to 600 °C . The onset conditions for flash sintering were determined for three stoichiometries (UO2.00, UO2.08, and UO2.16) and analyzed against an established thermal runaway model. The presence of excess oxygen was found to enhance the flash sintering onset behavior of uranium dioxide, lowering the field required to flash and shortening the time required for a flash to occur. The results from this study highlight the effect of stoichiometry on the flash sintering behavior of uranium dioxide and will serve as the foundation for future studies on this material.

Differences in the Optical Characteristics of Continental US Ground and Cloud Flashes as Observed from Space

NASA Technical Reports Server (NTRS)

Koshak, William

2007-01-01

Continental US lightning flashes observed by the Optical Transient Detector (OTD) are categorized according to flash type (ground or cloud flash) using US National Lightning Detection Network (TM) (NLDN) data. The statistics of the ground and cloud flash optical parameters (e.g., radiance, area, duration, number of optical groups, and number of optical events) are inter-compared. On average, the ground flash cloud-top emissions are more radiant, illuminate a larger area, are longer lasting, and have more optical groups and optical events than those cloud-top emissions associated with cloud flashes. Given these differences, it is suggested that the methods of Bayesian Inference could be used to help discriminate between ground and cloud flashes. The ability to discriminate flash type on-orbit is highly desired since such information would help researchers and operational decision makers better assess the intensification, evolutionary state, and severe weather potential of thunderstorms. This work supports risk reduction activities presently underway for the future launch of the GOES-R Geostationary Lightning Mapper (GLM).

Algorithms for Lunar Flash Video Search, Measurement, and Archiving

NASA Technical Reports Server (NTRS)

Swift, Wesley; Suggs, Robert; Cooke, Bill

2007-01-01

Lunar meteoroid impact flashes provide a method to estimate the flux of the large meteoroid flux and thus their hazard to spacecraft. Although meteoroid impacts on the Moon have been detected using video methods for over a decade, the difficulty of manually searching hours of video for the rare, extremely brief impact flashes has discouraged the technique's systematic implementation. A prototype has been developed for the purpose of automatically searching lunar video records for impact flashes, eliminating false detections, editing the returned possible flashes, Z and archiving and documenting the results. The theory and organization of the program is discussed with emphasis on the filtering out of several classes of false detections and retaining the brief portions of the raw video necessary for in depth analysis of the flashes detected. Several utilities for measurement, analysis, and location of the flashes on the moon included in the program are demonstrated. Application of the program to a year's worth of lunar observations is discussed along with examples of impact flashes as well as several classes of false impact flashes.

Algorithms for Lunar Flash Video Search, Measurement, and Archiving

NASA Technical Reports Server (NTRS)

Swift, Wesley; Suggs, Robert; Cooke, William

2007-01-01

Lunar meteoroid impact flashes provide a method to estimate the flux of the large meteoroid flux and thus their hazard to spacecraft. Although meteoroid impacts on the Moon have been detected using video methods for over a decade, the difficulty of manually searching hours of video for the rare, extremely brief impact flashes has discouraged the technique's systematic implementation. A prototype has been developed for the purpose of automatically searching Lunar video records for impact flashes, eliminating false detections, editing the returned possible flashes, and archiving and documenting the results. The theory and organization of the program is discussed with emphasis on the filtering out of several classes of false detections and retaining the brief portions of the raw video necessary for in depth analysis of the flashes detected. Several utilities for measurement, analysis, and location of the flashes on the moon included in the program are demonstrated. Application of the program to a year's worth of Lunar observations is discussed along with examples of impact flashes as well as several classes of false impact flashes.

Lightning Channels of Cloud-to-Ground Flashes Neutralizing Multiple Charge Regions Inside Winter Thunderclouds

NASA Astrophysics Data System (ADS)

Akita, Manabu; Yoshida, Satoru; Nakamura, Yoshitaka; Morimoto, Takeshi; Ushio, Tomoo; Kawasaki, Zen-Ichiro; Wang, Daohong

Lightning Research Group of Osaka University (LRG-OU) has been developing and improving the VHF broadband digital interferometer (DITF) for thunderstorm observations. It enables us to locate the impulsive VHF radiation sources caused by lightning discharges with extremely high resolutions. As a result of the VHF observations during the 2007-2008 winter season in the Japan Sea coastal area, cloud-to-ground (CG) flashes that neutralize multiple charge regions inside thunderclouds are visualized by the VHF broadband DITF. The first flash is the positive CG flash that neutralizes multiple positive charge regions in a flash. The second flash is the bipolar lightning flash that neutralizes both positive and negative charge inside thunderclouds. In the case of bipolar lightning flashes, some tens millisecond after the return strokes, the subsequent negative breakdowns initiate from the proximities of the initiation points of the preceding negative stepped leaders. It was also found that the altitudes of negative charge regions are lower than 2km. The bipolar lightning flashes observed in this campaign neutralize positive charge after lowering the negative charge to the ground.

Brain Management During Trauma

NASA Astrophysics Data System (ADS)

Shatsky, Stanley A.

1984-01-01

The Neurosurgeon faces a dilemma, that is, how to treat and reconstruct the injured skull and brain with limited knowledge as to how the injury occurred. In an attempt to understand such injuries, our group assembled a series of acceleration sleds to experimentally reproduce these injuries in primates and high frame rate flash x-ray cine system to radiographically study their time course.

Method and apparatus for offloading compute resources to a flash co-processing appliance

DOEpatents

Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing -bung

2015-10-13

Solid-State Drive (SSD) burst buffer nodes are interposed into a parallel supercomputing cluster to enable fast burst checkpoint of cluster memory to or from nearby interconnected solid-state storage with asynchronous migration between the burst buffer nodes and slower more distant disk storage. The SSD nodes also perform tasks offloaded from the compute nodes or associated with the checkpoint data. For example, the data for the next job is preloaded in the SSD node and very fast uploaded to the respective compute node just before the next job starts. During a job, the SSD nodes perform fast visualization and statistical analysis upon the checkpoint data. The SSD nodes can also perform data reduction and encryption of the checkpoint data.

MHD Code Optimizations and Jets in Dense Gaseous Halos

NASA Astrophysics Data System (ADS)

Gaibler, Volker; Vigelius, Matthias; Krause, Martin; Camenzind, Max

We have further optimized and extended the 3D-MHD-code NIRVANA. The magnetized part runs in parallel, reaching 19 Gflops per SX-6 node, and has a passively advected particle population. In addition, the code is MPI-parallel now - on top of the shared memory parallelization. On a 512^3 grid, we reach 561 Gflops with 32 nodes on the SX-8. Also, we have successfully used FLASH on the Opteron cluster. Scientific results are preliminary so far. We report one computation of highly resolved cocoon turbulence. While we find some similarities to earlier 2D work by us and others, we note a strange reluctancy of cold material to enter the low density cocoon, which has to be investigated further.

Polycrystalline Si nanoparticles and their strong aging enhancement of blue photoluminescence

NASA Astrophysics Data System (ADS)

Yang, Shikuan; Cai, Weiping; Zeng, Haibo; Li, Zhigang

2008-07-01

Nearly spherical polycrystalline Si nanoparticles with 20 nm diameter were fabricated based on laser ablation of silicon wafer immersed in sodium dodecyl sulfate aqueous solution. Such Si nanoparticles consist of disordered areas and ultrafine grains of 3 nm in mean size and exhibit significant photoluminescence in blue region. Importantly, aging at ambient air leads to continuing enhancement of the emission (more than 130 times higher in 16 weeks) showing stable and strong blue emission. This aging enhancement is attributed to progressive passivation of nonradiative Pb centers corresponding to silicon dangling bonds on the particles' surface. This study could be helpful in pushing Si into optoelectronic field and Si-based full color display, biomedical tagging, and flash memories.

The Stimulus Movement Effect: Allocation of Attention or Artifact?

NASA Technical Reports Server (NTRS)

Washburn, David A.

1993-01-01

In previous reports, including one by the author, learning has been shown to benefit by having discriminanda move rather than remain stationary. This stimulus movement effect might be attributed to several theoretical mechanisms, including attention, topological memory, and exposure duration. The series of experiments reported in this article was designed to Contrast these potential explanatory factors. Ten rhesus monkeys (Macaca mulatta) were tested on a variety of computerized tasks in which the stimuli remained stationary, flashed, or moved at systematically varied speeds. Performance was significantly best when the sample stimulus moved quickly and was poorest when the stimulus remained stationary. Further analysis of these data and other previously published data revealed that the distribution of the stimulus movement effect across trials supported an attention allocation interpretation.

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Multi-task functional MRI in multiple sclerosis patients without clinical disability.

PubMed

Colorado, René A; Shukla, Karan; Zhou, Yuxiang; Wolinsky, Jerry S; Narayana, Ponnada A

2012-01-02

While the majority of individuals with multiple sclerosis (MS) develop significant clinical disability, a subset experiences a disease course with minimal impairment even in the presence of significant apparent tissue damage on magnetic resonance imaging (MRI). Functional magnetic resonance imaging (fMRI) in MS patients with low disability suggests that increased use of the cognitive control system may limit the clinical manifestation of the disease. The current fMRI studies tested the hypothesis that nondisabled MS patients show increased recruitment of cognitive control regions while performing sensory, motor and cognitive tasks. Twenty two patients with relapsing-remitting MS and an Expanded Disability Status Scale (EDSS) score of ≤1.5 and 23 matched healthy controls were recruited. Subjects underwent fMRI while observing flashing checkerboards, performing right or left hand movements, or executing the 2-back working memory task. Compared to control subjects, patients demonstrated increased activation of the right dorsolateral prefrontal cortex and anterior cingulate cortex during the performance of the working memory task. This pattern of functional recruitment also was observed during the performance of non-dominant hand movements. These results support the mounting evidence of increased functional recruitment of cognitive control regions in the working memory system of MS patients with low disability and provide new evidence for the role of increased cognitive control recruitment in the motor system. Copyright © 2011 Elsevier Inc. All rights reserved.

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

PubMed

Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

2016-07-20

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Two-flash thresholds as a function of flash luminance and area.

DOT National Transportation Integrated Search

1968-09-01

The recent use of strobe lights in aviation suggests the possibility of using temporal patterns of short duration flashes as information-carrying signals. Under night flight conditions, two-flash thresholds were obtained using a two-interval, tempora...

Floods - Multiple Languages

MedlinePlus

... Arabic (العربية) Expand Section Floods and Flash Flooding - English PDF Floods and Flash Flooding - العربية (Arabic) PDF ... Bosnian (bosanski) Expand Section Floods and Flash Flooding - English PDF Floods and Flash Flooding - bosanski (Bosnian) PDF ...

The Evolution and Structure of Extreme Optical Lightning Flashes

PubMed Central

Peterson, Michael; Rudlosky, Scott; Deierling, Wiebke

2018-01-01

This study documents the composition, morphology, and motion of extreme optical lightning flashes observed by the Lightning Imaging Sensor (LIS). The furthest separation of LIS events (groups) in any flash is 135 km (89 km), the flash with the largest footprint had an illuminated area of 10,604 km2, and the most dendritic flash has 234 visible branches. The longest-duration convective LIS flash lasted 28 s and is overgrouped and not physical. The longest-duration convective-to-stratiform propagating flash lasted 7.4 s, while the longest-duration entirely stratiform flash lasted 4.3 s. The longest series of nearly consecutive groups in time lasted 242 ms. The most radiant recorded LIS group (i.e., “superbolt”) is 735 times more radiant than the average group. Factors that impact these optical measures of flash morphology and evolution are discussed. While it is apparent that LIS can record the horizontal development of the lightning channel in some cases, radiative transfer within the cloud limits the flash extent and level of detail measured from orbit. These analyses nonetheless suggest that lightning imagers such as LIS and Geostationary Lightning Mapper can complement ground-based lightning locating systems for studying physical lightning phenomena across large geospatial domains. PMID:29527425

Performance Assessment of the Optical Transient Detector and Lightning Imaging Sensor. Part 2; Clustering Algorithm

NASA Technical Reports Server (NTRS)

Mach, Douglas M.; Christian, Hugh J.; Blakeslee, Richard; Boccippio, Dennis J.; Goodman, Steve J.; Boeck, William

2006-01-01

We describe the clustering algorithm used by the Lightning Imaging Sensor (LIS) and the Optical Transient Detector (OTD) for combining the lightning pulse data into events, groups, flashes, and areas. Events are single pixels that exceed the LIS/OTD background level during a single frame (2 ms). Groups are clusters of events that occur within the same frame and in adjacent pixels. Flashes are clusters of groups that occur within 330 ms and either 5.5 km (for LIS) or 16.5 km (for OTD) of each other. Areas are clusters of flashes that occur within 16.5 km of each other. Many investigators are utilizing the LIS/OTD flash data; therefore, we test how variations in the algorithms for the event group and group-flash clustering affect the flash count for a subset of the LIS data. We divided the subset into areas with low (1-3), medium (4-15), high (16-63), and very high (64+) flashes to see how changes in the clustering parameters affect the flash rates in these different sizes of areas. We found that as long as the cluster parameters are within about a factor of two of the current values, the flash counts do not change by more than about 20%. Therefore, the flash clustering algorithm used by the LIS and OTD sensors create flash rates that are relatively insensitive to reasonable variations in the clustering algorithms.

How do people perceive, understand, and anticipate responding to flash flood risks and warnings? Results from a public survey in Boulder, Colorado, USA

NASA Astrophysics Data System (ADS)

Morss, Rebecca E.; Mulder, Kelsey J.; Lazo, Jeffrey K.; Demuth, Julie L.

2016-10-01

This study investigates flash flood forecast and warning communication, interpretation, and decision making, using data from a survey of 418 members of the public in Boulder, Colorado, USA. Respondents to the public survey varied in their perceptions and understandings of flash flood risks in Boulder, and some had misconceptions about flash flood risks, such as the safety of crossing fast-flowing water. About 6% of respondents indicated consistent reversals of US watch-warning alert terminology. However, more in-depth analysis illustrates the multi-dimensional, situationally dependent meanings of flash flood alerts, as well as the importance of evaluating interpretation and use of warning information along with alert terminology. Some public respondents estimated low likelihoods of flash flooding given a flash flood warning; these were associated with lower anticipated likelihood of taking protective action given a warning. Protective action intentions were also lower among respondents who had less trust in flash flood warnings, those who had not made prior preparations for flash flooding, and those who believed themselves to be safer from flash flooding. Additional analysis, using open-ended survey questions about responses to warnings, elucidates the complex, contextual nature of protective decision making during flash flood threats. These findings suggest that warnings can play an important role not only by notifying people that there is a threat and helping motivate people to take protective action, but also by helping people evaluate what actions to take given their situation.

Characteristic pulse trains of preliminary breakdown in four isolated small thunderstorms

NASA Astrophysics Data System (ADS)

Ma, Dong

2017-03-01

Using a low-frequency six-station local network, preliminary breakdown (PB) pulses not followed or followed by negative return stroke (RS), which are defined as PB-type and PB cloud-to-ground (PBCG)-type flashes, are analyzed based on four isolated small thunderstorms for the first time. On the basis of 22 PB-type flashes out of totally 2155 flashes, it indicates that the number of PB-type flashes is very small. At the early stage, PB-type flashes are observed in all four thunderstorms. At the active stage, PB-type flashes still can occur; meanwhile, there are few or no negative cloud-to-ground (CG) flashes. However, at the final stage no PB-type flashes occur. At the stage of distinct cell merging or splitting, PB-type flashes are also observed. Based on the 123 PBCG-type flashes, we discuss the percentage of PBCG-type flashes and also analyze the relationship between the electric field (E-field) amplitude of the largest pulse in the PB pulse train normalized to 100 km (PBA), the E-field amplitude of the first return stroke normalized to 100 km (RSA), the time interval between PBA and RSA (PB-RS interval), and the ratio between PBA and RSA (PB-RS ratio). We find that the percentage of PBCG-type flashes is not always dependent on PBA or PB-RS ratio; the type of thunderstorms may also have an impact on this percentage. None of the PB-RS intervals is less than 20 ms; we speculate that such long PB-RS interval is the feature of isolated small thunderstorms, but more observations are needed to further investigate this question.

Anxiogenic CO2 Stimulus Elicits Exacerbated Hot Flash-like Responses in a Rat Menopause Model and Hot Flashes in Menopausal Women

PubMed Central

Federici, Lauren M.; Roth, Sarah Dorsey; Krier, Connie; Fitz, Stephanie D.; Skaar, Todd; Shekhar, Anantha; Carpenter, Janet S.; Johnson, Philip L.

2016-01-01

Objective Since longitudinal studies determined that anxiety is a strong risk factor for hot flashes, we hypothesized that an anxiogenic stimulus that signals air hunger (hypercapnic, normoxic gas) would trigger an exacerbated hot flash-associated increase in tail skin temperature (TST) in a rat ovariectomy (OVEX) model of surgical menopause and hot flashes in symptomatic menopausal women. We also assessed TST responses in OVEX serotonin transporter (SERT)+/− rats that models a common polymorphism that is associated with increased climacteric symptoms in menopausal women and increases in anxiety traits. Methods OVEX and sham-OVEX rats (initial experiment) and wildtype and SERT+/− OVEX rats (subsequent experiment) were exposed to a 5 min infusion of 20%CO2 normoxic gas while measuring TST. Menopausal women were given brief 20% and 35%CO2 challenges, and hot flashes were self-reported and objectively verified. Results Compared to controls, OVEX rats had exacerbated increases in TST, and SERT+/− OVEX rats had prolonged TST increases following CO2. Most women reported mild/moderate hot flashes after CO2 challenges, and the hot flash severity to CO2 was positively correlated with daily hot flash frequency. Conclusions The studies demonstrate that this anxiogenic stimulus is capable of inducing cutaneous vasomotor responses in OVEX rats, and eliciting hot flashes in menopausal women. In rats, the severity of the response was mediated by loss of ovarian function and increased anxiety traits (SERT+/−), and, in women, by daily hot flash frequency. These findings may provide insights into anxiety related triggers and genetic risk factors for hot flashes in thermoneutral environments. PMID:27465717

Continuous transdermal nitroglycerin therapy for menopausal hot flashes: a single-arm, dose-escalation trial.

PubMed

Huang, Alison J; Cummings, Steven R; Schembri, Michael; Vittinghoff, Eric; Ganz, Peter; Grady, Deborah

2016-03-01

To describe the efficacy and tolerability of continuous nitroglycerin for treatment of hot flashes. Perimenopausal and postmenopausal women reporting at least seven hot flashes per day were recruited into a single-arm, dose-escalation trial of continuous transdermal nitroglycerin. Participants were started on a generic 0.1 mg/hour nitroglycerin patch applied daily without patch-free periods. During 4 weeks, participants escalated dosage weekly to 0.2, 0.4, or 0.6 mg/hour as tolerated, then discontinued nitroglycerin during the final week. Changes in hot flash frequency and severity were assessed using symptom diaries. Paired t tests examined change in outcomes between baseline and maximal-dose therapy and after discontinuation of nitroglycerin. Of the 19 participants, mean age was 51.4 (±4.3) years. Women reported an average 10.6 (±3.0) hot flashes and 7.1 (±3.8) moderate-to-severe hot flashes per day at baseline. Eleven women escalated to 0.6 mg/hour, three to 0.4 mg/hour, two to 0.2 mg/hour, and one remained on 0.1 mg/hour nitroglycerin. Two discontinued nitroglycerin before the first outcomes assessment. Among the remaining 17 women, the average daily frequency of hot flashes decreased by 54% and the average frequency of moderate-to-severe hot flashes decreased by 69% from baseline to maximum-dose therapy (P < 0.001 for both). After discontinuing nitroglycerin, participants reported an average 23% increase in frequency of any hot flashes (P = 0.041) and 96% increase in moderate-to-severe hot flashes (P < 0.001). Continuous nitroglycerin may substantially and reversibly decrease hot flash frequency and severity. If confirmed in a randomized blinded trial, it may offer a novel nonhormonal hot flash treatment.

Continuous Transdermal Nitroglycerin Therapy for Menopausal Hot Flashes: A Single-Arm Dose-Escalation Trial

PubMed Central

Huang, Alison J.; Cummings, Steven R.; Schembri, Michael; Vittinghoff, Eric; Ganz, Peter; Grady, Deborah

2015-01-01

Objective To describe the efficacy and tolerability of continuous nitroglycerin for treatment of hot flashes. Methods Peri- and postmenopausal women reporting at least 7 hot flashes per day were recruited into a single-arm, dose-escalation trial of continuous transdermal nitroglycerin. Participants were started on a generic 0.1 mg/hr nitroglycerin patch applied daily without patch-free periods. Over four weeks, participants escalated dosage weekly to 0.2, 0.4, or 0.6 mg/hr as tolerated, then discontinued nitroglycerin during the final week. Changes in hot flash frequency and severity were assessed using symptom diaries. Paired t-tests examined change in outcomes between baseline and maximal-dose therapy as well as after discontinuation of nitroglycerin. Results Of the 19 participants, mean age was 51.4 (±4.3) years. Women reported an average 10.6 (±3.0) hot flashes and 7.1 (±3.8) moderate-to-severe hot flashes per day at baseline. Eleven women escalated to 0.6 mg/hr, three to 0.4 mg/hr, two to 0.2 mg/hr, and one remained on 0.1 mg/hr nitroglycerin. Two discontinued nitroglycerin before the first outcomes assessment. Among the remaining 17 women, the average daily frequency of hot flashes decreased by 54% and the average frequency of moderate-to-severe hot flashes decreased by 69% from baseline to maximum-dose therapy (P<0.001 for both). After discontinuing nitroglycerin, participants reported an average 23% increase in frequency of any hot flashes (P=0.041) and 96% increase in moderate-to-severe hot flashes (P<0.001). Conclusions Continuous nitroglycerin may substantially and reversibly decrease hot flash frequency and severity. If confirmed in a randomized blinded trial, it may offer a novel non-hormonal hot flash treatment. PMID:26263283