Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velişa, G.; Wendler, E.; Zhao, S.

A combined experimental and computational evaluation of damage accumulation in ion-irradiated Ni, NiFe, and NiFeCoCr is presented. Furthermore, a suppressed damage accumulation, at early stages (low-fluence irradiation), is revealed in NiFeCoCr, with a linear dependence as a function of ion fluence, in sharp contrast with Ni and NiFe. This effect, observed at 16 K, is attributed to the complex energy landscape in these alloys that limits defect mobility and therefore enhances defect interaction and recombination. Our results, together with previous room-temperature and high-temperature investigations, suggest "self-healing" as an intrinsic property of complex alloys that is not a thermally activated process.

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

DOE PAGES

Velişa, G.; Wendler, E.; Zhao, S.; ...

2017-12-17

A combined experimental and computational evaluation of damage accumulation in ion-irradiated Ni, NiFe, and NiFeCoCr is presented. Furthermore, a suppressed damage accumulation, at early stages (low-fluence irradiation), is revealed in NiFeCoCr, with a linear dependence as a function of ion fluence, in sharp contrast with Ni and NiFe. This effect, observed at 16 K, is attributed to the complex energy landscape in these alloys that limits defect mobility and therefore enhances defect interaction and recombination. Our results, together with previous room-temperature and high-temperature investigations, suggest "self-healing" as an intrinsic property of complex alloys that is not a thermally activated process.

On the studies of thermodynamics properties of fast neutron irradiated (LixK1-x)2SO4 crystals

NASA Astrophysics Data System (ADS)

El-Khatib, A. M.; Kassem, M. E.; Gomaa, N. G.; Mahmoud, S. A.

The effect of fast neutron irradiation on the thermodynamic properties of (LixK1-x)2SO4, (x = 0.1, 0.2,˙˙˙˙˙˙˙˙0.5) has been studied. The measurements were carried out in the vicinity of phase transition. The study reveals that as the lithium content decreases the first high temperature phase Tc = 705 K disappears, while the second one is shifted to lower temperature. It is observed also that the specific heat, Cp, decreases sharply with neutron integrated fluence φ and increases once more. Both entropy and enthalpy changes increase with the increase of neutron integrated fluence.

Optically dark excitonic states mediated exciton and biexciton valley dynamics in monolayer WSe2

NASA Astrophysics Data System (ADS)

Zhang, Minghua; Fu, Jiyong; Dias, A. C.; Qu, Fanyao

2018-07-01

We present a theory to address the photoluminescence (PL) intensity and valley polarization (VP) dynamics in monolayer WSe2, under the impact of excitonic dark states of both excitons and biexcitons. We find that the PL intensity of all excitonic channels including intravalley exciton (Xb), intravalley biexciton (XXk,k) and intervalley biexciton (XX) in particular for the XXk,k PL is enhanced by laser excitation fluence. In addition, our results indicate the anomalous temperature dependence of PL, i.e. increasing with temperature, as a result of favored phonon assisted dark-to-bright scatterings at high temperatures. Moreover, we observe that the PL is almost immune to intervalley scatterings, which trigger the exchange of excitonic states between the two valleys. As far as the valley polarization is concerned, we find that the VP of Xb shrinks as temperature increases, exhibiting opposite temperature response to PL, while the intravalley XXk,k VP is found almost independent of temperature. In contrast to both Xb and XXk,k, the intervalley XX VP identically vanishes, because of equal populations of excitons in the K and valleys bounded to form intervalley biexcitons. Notably, it is found that the Xb VP much more strongly depends on bright–dark scattering than that of XXk,k, making dark state act as a robust reservoir for valley polarization against intervalley scatterings for Xb at strong bright–dark scatterings, but not for XXk,k. Dark excitonic states enabled enhancement of VP benefits quantum technology for information processing based on the valley degree of freedom in valleytronic devices. Furthermore, the VP has strong dependence on intervalley scattering but maintains essentially constant with excitation fluence. Finally, the dependence of time evolution of PL and VP on temperature and excitation fluence is discussed.

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

NASA Astrophysics Data System (ADS)

Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

Optical emission spectroscopy of carbon laser plasma ion source

NASA Astrophysics Data System (ADS)

Balki, Oguzhan; Rahman, Md. Mahmudur; Elsayed-Ali, Hani E.

2018-04-01

Carbon laser plasma generated by an Nd:YAG laser (wavelength 1064 nm, pulse width 7 ns, fluence 4-52 J cm-2) is studied by optical emission spectroscopy and ion time-of-flight. Up to C4+ ions are detected with the ion flux strongly dependent on the laser fluence. The increase in ion charge with the laser fluence is accompanied by observation of multicharged ion lines in the optical spectra. The time-integrated electron temperature Te is calculated from the Boltzmann plot using the C II lines at 392.0, 426.7, and 588.9 nm. Te is found to increase from ∼0.83 eV for a laser fluence of 22 J cm-2 to ∼0.90 eV for 40 J cm-2. The electron density ne is obtained from the Stark broadened profiles of the C II line at 392 nm and is found to increase from ∼ 2 . 1 × 1017cm-3 for 4 J cm-2 to ∼ 3 . 5 × 1017cm-3 for 40 J cm-2. Applying an external electric field parallel to the expanding plume shows no effect on the line emission intensities. Deconvolution of ion time-of-flight signal with a shifted Maxwell-Boltzmann distribution for each charge state results in an ion temperature Ti ∼4.7 and ∼6.0 eV for 20 and 36 J cm-2, respectively.

Helium interaction with vacancy-type defects created in silicon carbide single crystal

NASA Astrophysics Data System (ADS)

Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

2013-05-01

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

Ion beam enhanced etching of LiNbO 3

NASA Astrophysics Data System (ADS)

Schrempel, F.; Gischkat, Th.; Hartung, H.; Kley, E.-B.; Wesch, W.

2006-09-01

Single crystals of z- and x-cut LiNbO 3 were irradiated at room temperature and 15 K using He +- and Ar +-ions with energies of 40 and 350 keV and ion fluences between 5 × 10 12 and 5 × 10 16 cm -2. The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He +-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO 3 in the case of Ar +-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He +- and Ar +-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min -1. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO 3 are discussed.

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

NASA Astrophysics Data System (ADS)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Krypton ion irradiation-induced amorphization and nano-crystal formation in pyrochlore Lu2Ti2O7 at room temperature

NASA Astrophysics Data System (ADS)

Xie, Qiu-Rong; Zhang, Jian; Yin, Dong-Min; Guo, Qi-Xun; Li, Ning

2015-12-01

Polycrystalline pyrochlore Lu2Ti2O7 pellets are irradiated with 600-keV Kr3+ ions up to a fluence of 1.45 × 1016 Kr3+/cm2. Irradiation induced structural modifications are examined by using grazing incidence x-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). The GIXRD reveals that amorphous fraction increases with the increase of fluences up to 2 × 1015 Kr3+/cm2, and the results are explained with a direct-impact model. However, when the irradiation fluence is higher than 2 × 1015 Kr3+/cm2, the amorphous fraction reaches a saturation of ∼80%. Further TEM observations imply that nano-crystal is formed with a diameter of ∼10 nm within the irradiation layer at a fluence of 4 × 1015 Kr3+/cm2. No full amorphization is achieved even at the highest fluence of 1.45 × 1016 Kr3+/cm2 (∼36 displacement per atom). The high irradiation resistance of pyrochlore Lu2Ti2O7 at higher fluence is explained on the basis of enhanced radiation tolerance of nano-crystal structure. Project sponsored by the National Natural Science Foundation of China (Grant No. 11205128) and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012121034).

Effect of starting microstructure on helium plasma-materials interaction in tungsten

DOE PAGES

Wang, Kun; Bannister, Mark E.; Meyer, Fred W.; ...

2016-11-24

Here, in a magnetic fusion energy (MFE) device, the plasma-facing materials (PFMs) will be subjected to tremendous fluxes of ions, heat, and neutrons. The response of PFMs to the fusion environment is still not well defined. Tungsten metal is the present candidate of choice for PFM applications such as the divertor in ITER. However, tungsten's microstructure will evolve in service, possibly to include recrystallization. How tungsten's response to plasma exposure evolves with changes in microstructure is presently unknown. In this work, we have exposed hot-worked and recrystallized tungsten to an 80 eV helium ion beam at a temperature of 900more » °C to fluences of 2 × 10 23 or 20 × 10 23 He/m 2. This resulted in a faceted surface structure at the lower fluence or short but well-developed nanofuzz structure at the higher fluence. There was little difference in the hot-rolled or recrystallized material's near-surface (≤50 nm) bubbles at either fluence. At higher fluence and deeper depth, the bubble populations of the hot-rolled and recrystallized were different, the recrystallized being larger and deeper. This may explain previous high-fluence results showing pronounced differences in recrystallized material. The deeper penetration in recrystallized material also implies that grain boundaries are traps, rather than high-diffusivity paths.« less

Evolution and tailoring of plasmonic properties in Ag:ZrO2 nanocomposite films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Kumar, Manish; Kulriya, P. K.; Pivin, J. C.; Avasthi, D. K.

2011-02-01

Ag:ZrO2 nanocomposite films have been synthesized by a sol-gel dip coating process at room temperature, followed by irradiation using swift heavy ions. The effect of electronic energy loss and fluences on the evolution and consequently on the tailoring of plasmonic properties of films has been studied. The optical study exhibits that color of films converts from transparent in pristine form into shiny yellow when films are irradiated by 100 MeV Ag ions at a fluence of 3×1012 ions/cm2. However, irradiation by 120 MeV O ions up to the fluence of 1 × 1014 ions/cm2 does not induce any coloration in films. The coloration is attributed to the evolution of plasmonic feature resulting in a surface plasmon resonance (SPR) induced absorption peak in the visible region. Increase in fluence from 3 × 1012 to 6 × 1013 ions/cm2 of 100 MeV Ag ions induces a redshift in SPR induced peak position from 434 to 487 nm. Microstructural studies confirms the conversion of Ag2O3 (in pristine films) into cubic phase of metallic Ag and the increase of average size of particles with the increasing fluence up to 6 × 1013 ions/cm2. Further increase in fluence leads to the dissolution of Ag atoms in the ZrO2 matrix.

Simulation studies of chemical erosion on carbon based materials at elevated temperatures

NASA Astrophysics Data System (ADS)

Kenmotsu, T.; Kawamura, T.; Li, Zhijie; Ono, T.; Yamamura, Y.

1999-06-01

We simulated the fluence dependence of methane reaction yield in carbon with hydrogen bombardment using the ACAT-DIFFUSE code. The ACAT-DIFFUSE code is a simulation code based on a Monte Carlo method with a binary collision approximation and on solving diffusion equations. The chemical reaction model in carbon was studied by Roth or other researchers. Roth's model is suitable for the steady state methane reaction. But this model cannot estimate the fluence dependence of the methane reaction. Then, we derived an empirical formula based on Roth's model for methane reaction. In this empirical formula, we assumed the reaction region where chemical sputtering due to methane formation takes place. The reaction region corresponds to the peak range of incident hydrogen distribution in the target material. We adopted this empirical formula to the ACAT-DIFFUSE code. The simulation results indicate the similar fluence dependence compared with the experiment result. But, the fluence to achieve the steady state are different between experiment and simulation results.

Low-temperature tensile strength of the ITER-TF model coil insulation system after reactor irradiation

NASA Astrophysics Data System (ADS)

Bittner-Rohrhofer, K.; Humer, K.; Weber, H. W.

The windings of the superconducting magnet coils for the ITER-FEAT fusion device are affected by high mechanical stresses at cryogenic temperatures and by a radiation environment, which impose certain constraints especially on the insulating materials. A glass fiber reinforced plastic (GFRP) laminate, which consists of Kapton/R-glass-fiber reinforcement tapes, vacuum-impregnated in a DGEBA epoxy system, was used for the European toroidal field model coil turn insulation of ITER. In order to assess its mechanical properties under the actual operating conditions of ITER-FEAT, cryogenic (77 K) static tensile tests and tension-tension fatigue measurements were done before and after irradiation to a fast neutron fluence of 1×10 22 m -2 ( E>0.1 MeV), i.e. the ITER-FEAT design fluence level. We find that the mechanical strength and the fracture behavior of this GFRP are strongly influenced by the winding direction of the tape and by the radiation induced delamination process. In addition, the composite swells by 3%, forming bubbles inside the laminate, and loses weight (1.4%) at the design fluence.

Effects of helium ion implantation on the surface morphology of tungsten at high temperature for the first wall armor and divertor plates of fusion reactors

NASA Astrophysics Data System (ADS)

Zenobia, Samuel J.

Three devices at the University of Wisconsin-Madison Inertial Electrostatic Confinement (UW IEC) laboratory were used to implant W and W alloys with helium ions at high temperatures. These devices were HOMER, HELIOS, and the Materials Irradiation Experiment (MITE-E). The research presented in this thesis will focus on the experiments carried out utilizing the MITE-E. Early UW work in HOMER and HELIOS on silicon carbide, carbon velvet, W-coated carbon velvet, fine-grain W, nano-grain W, W needles, and single- and polycrystalline W showed that these materials were not resistant to He+ implantation above ˜800 °C. Unalloyed W developed a "coral-like" surface morphology after He+ implantation, but appeared to be the most robust material investigated. The MITE-E used an ion gun technology to implant tungsten with 30 keV He+. Tungsten specimens were implanted at 900 °C to total average fluences of 6x1016 -- 6x1018 He +/cm2. Other specimens were implanted to a total average fluence of 5x1018 He+/cm2 at temperatures between 500 and 900 °C. Micrographs of the implanted W specimens revealed the development of three distinct surface morphologies. These morphologies are classified as "blistering", "pitting", and "orientated ridges". Preferential sputtering of the W by the energetic He+ appears to be responsible for pitting and orientated ridges which developed at high fluences (1019 He+/cm2) in the MITE-E. While the orientated ridges were the dominant morphology on the W surface above 700 °C, the pitting was prevalent below 700 °C. The blister morphology was observed at all of the examined temperatures at fluences ≥5x1017 He+/cm2 but disappeared above fluences of 1019 He+/cm 2. The "coral-like" surface morphology on W inherent to He + implantation experiments in HOMER and HELIOS developed from a combination of sources: multiangular ion incidence, ion energy spread (softening), and electron field emission from nano-scale surface features induced by He + implantation. The HOMER and HELIOS devices were found to be better suited for simulation of magnetic fusion environments with off-normal particle incidences, and the MITE-E was found to be more suited for simulating the normal particle incidence of inertial fusion environments.

Films of brookite TiO2 nanorods/nanoparticles deposited by matrix-assisted pulsed laser evaporation as NO2 gas-sensing layers

NASA Astrophysics Data System (ADS)

Caricato, A. P.; Buonsanti, R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Taurino, A.; Rella, R.

2011-09-01

Titanium dioxide (TiO2) nanorods in the brookite phase, with average dimensions of 3-4 nm × 20-50 nm, were synthesized by a wet-chemical aminolysis route and used as precursors for thin films that were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. A nanorod solution in toluene (0.016 wt% TiO2) was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser at a fluence of 350 mJ/cm2 and repetition rate of 10 Hz. Single-crystal Si wafers, silica slides, carbon-coated Cu grids and alumina interdigitated slabs were used as substrates to allow performing different characterizations. Films fabricated with 6000 laser pulses had an average thickness of ˜150 nm, and a complete coverage of the selected substrate as achieved. High-resolution scanning and transmission electron microscopy investigations evidenced the formation of quite rough films incorporating individually distinguishable TiO2 nanorods and crystalline spherical nanoparticles with an average diameter of ˜13 nm. Spectrophotometric analysis showed high transparency through the UV-Vis spectral range. Promising resistive sensing responses to 1 ppm of NO2 mixed in dry air were obtained.

Growth of rutile TiO2 nanorods in Ti and Cu ion sequentially implanted SiO2 and the involved mechanisms

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Liu, Xiaoyu; Wang, Xiaohu; Dai, Haitao; Liu, Changlong

2018-01-01

TiO2 in nanoscale exhibits unique physicochemical and optoelectronic properties and has attracted much more interest of the researchers. In this work, TiO2 nanostructures are synthesized in amorphous SiO2 slices by implanting Ti ions, or sequentially implanting Ti and Cu ions combined with annealing at high temperature. The morphology, structure, spatial distribution and optical properties of the formed nanostructures have been investigated in detail. Our results clearly show that the thermal growth of TiO2 nanostructures in SiO2 substrate is significantly enhanced by presence of post Cu ion implantation, which depends strongly on the applied Cu ion fluence, as well as the annealing atmosphere. Due to the formation of Cu2O in the substrate, rutile TiO2 nanorods of large size have been well fabricated in the Ti and Cu sequentially implanted SiO2 after annealing in N2 atmosphere, in which Cu2O plays a role as a catalyst. Moreover, the sample with well-fabricated TiO2 nanorods exhibits a narrowed band gap, an enhanced optical absorption in visible region, and catalase-/peroxidase-like catalytic characteristics. Our findings provide an effective route to fabricate functional TiO2 nanorods in SiO2 via ion implantation.

Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

NASA Astrophysics Data System (ADS)

Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

2015-10-01

Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45 nm more and has a quite different nanostructured surface. Ex-situ X-ray photoelectron spectroscopy studies show a sequential reduction in at.% of Mo 3d doublets with fluence, leading to the complete depletion of 2.6 × 1024 ions m-2 at 973 K. For 2.6 × 1024 ions m-2 fluence irradiation at 973 K, only MoO3 3d doublets were observed. However, the Mo 3d doublets reappear at 1273 K irradiation, where a variety of nanostructures were observed with relatively much lower density than that of Mo fuzz. As in the microscopy studies, the reflectivity measurements also show a sequential reduction with ion fluence, leading to almost zero reflectivity value for fully grown fuzzy structures. The study is significant in the understanding of fuzz formation on high-Z refractory metals for fusion applications; in addition, the observed MoO3 fuzz has potential application in solar power concentration technology and in water splitting for hydrogen production.

Nanowire–quantum-dot lasers on flexible membranes

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Ota, Yasutomo; Ishida, Satomi; Nishioka, Masao; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-06-01

We demonstrate lasing in a single nanowire with quantum dots as an active medium embedded on poly(dimethylsiloxane) membranes towards application in nanowire-based flexible nanophotonic devices. Nanowire laser structures with 50 quantum dots are grown on patterned GaAs(111)B substrates and then transferred from the as-grown substrates on poly(dimethylsiloxane) transparent flexible organosilicon membranes, by means of spin-casting and curing processes. We observe lasing oscillation in the transferred single nanowire cavity with quantum dots at 1.425 eV with a threshold pump pulse fluence of ∼876 µJ/cm2, which enables the realization of high-performance multifunctional NW-based flexible photonic devices.

Tuning cationic composition of La:EuTiO{sub 3−δ} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shkabko, Andrey, E-mail: shkabko@gmail.com; Empa, Solid State Chemistry and Catalysis, CH-8600 Dübendorf; Xu, Chencheng

2013-11-01

Eu{sub 1−x}La{sub x}TiO{sub 3−δ} (x = 0, 0.3, 0.5) films were deposited in a p(Ar(96%)/H{sub 2}(4%)) = 4 × 10{sup −4} mbar atmosphere on (LaAlO{sub 3}){sub 0.3}-(Sr{sub 2}AlTaO{sub 6}){sub 0.7} vicinal substrates (0.1°). Reflection high-energy electron diffraction oscillation characteristics of a layer-by-layer growth mode were observed for stoichiometric and Ti-rich films and the laser fluence suited to deposit stoichiometric films was identified to be 1.25 J/cm{sup 2} independent of the La content. The variety of resulting film compositions follows the general trend of Eu-enrichment for low laser and Ti-enrichment for high laser fluence. X-ray diffraction confirms that all the filmsmore » are compressively strained with a general trend of an increase of c-axis elongation for non-stoichiometric films. The surfaces of non-stoichiometric films have an increased roughness, the highest sheet resistances, exhibit the presence of islands, and are Eu{sup 3+} rich for films deposited at low laser fluence.« less

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

PubMed Central

2013-01-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer. PMID:24138985

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation.

PubMed

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-18

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gou, J.; Zhang, C. H.; Zhang, L. Q.; Song, Y.; Wang, L. X.; Li, J. J.; Meng, Y. C.; Li, H. X.; Yang, Y. T.; Lu, Z. W.

2014-11-01

The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV 238U32+ ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 μm grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 × 109 to 5 × 1011 ions cm-2. The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 × 1010 ions cm-2. Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 × 1010 ions cm-2. The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations.

Time-resolved imaging of flyer dynamics for femtosecond laser-induced backward transfer of solid polymer thin films

NASA Astrophysics Data System (ADS)

Feinaeugle, M.; Gregorčič, P.; Heath, D. J.; Mills, B.; Eason, R. W.

2017-02-01

We have studied the transfer regimes and dynamics of polymer flyers from laser-induced backward transfer (LIBT) via time-resolved shadowgraphy. Imaging of the flyer ejection phase of LIBT of 3.8 μm and 6.4 μm thick SU-8 polymer films on germanium and silicon carrier substrates was performed over a time delay range of 1.4-16.4 μs after arrival of the laser pulse. The experiments were carried out with 150 fs, 800 nm pulses spatially shaped using a digital micromirror device, and laser fluences of up to 3.5 J/cm2 while images were recorded via a CCD camera and a spark discharge lamp. Velocities of flyers found in the range of 6-20 m/s, and the intact and fragmented ejection regimes, were a function of donor thickness, carrier and laser fluence. The crater profile of the donor after transfer and the resulting flyer profile indicated different flyer ejection modes for Si carriers and high fluences. The results contribute to better understanding of the LIBT process, and help to determine experimental parameters for successful LIBT of intact deposits.

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

NASA Astrophysics Data System (ADS)

Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

Radiation hardness of thin Low Gain Avalanche Detectors

NASA Astrophysics Data System (ADS)

Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

2018-05-01

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences < 2 ṡ 1015 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

High surface stability of magnetite on bi-layer Fe3O4/Fe/MgO(0 0 1) films under 1 MeV Kr+ ion irradiation

NASA Astrophysics Data System (ADS)

Kim-Ngan, N.-T. H.; Krupska, M.; Balogh, A. G.; Malinsky, P.; Mackova, A.

2017-12-01

We investigate the stability of the bi-layer Fe3O4/Fe(0 0 1) films grown epitaxially on MgO(0 0 1) substrates with the layer thickness in the range of 25-100 nm upon 1 MeV Kr+ ion irradiation. The layer structure and layer composition of the films before and after ion irradiation were studied by XRR, RBS and RBS-C techniques. The interdiffusion and intermixing was analyzed. No visible change in the RBS spectra was observed upon irradiation with ion fluence below 1015 Kr cm-2. The bi-layer structure and the stoichiometric Fe3O4 layer on the surface were well preserved after Kr+ ion irradiation at low damage levels, although the strong intermixing implied a large interfacial (Fe x O y ) and (Fe, Mg)O y layer respective at Fe3O4-Fe and Fe-MgO interface. The high ion fluence of 3.8  ×  1016 Kr cm-2 has induced a complete oxidization of the buffer Fe layer. Under such Kr fluence, the stoichiometry of the Fe3O4 surface layer was still preserved indicating its high stability. The entire film contains Fe x O y -type composition at ion fluence large than 5.0  ×  1016 Kr cm-2.

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

NASA Technical Reports Server (NTRS)

Beernink, Kevin; Guha, Subhendu; Yang, Jeff; Banerjee, Arindam; Lord, Ken; DeMaggio, Greg; Liu, Frank; Pietka, Ginger; Johnson, Todd; Reinhout, Melanie;

Comparison of epidermal/dermal damage between the long-pulsed 1064 nm Nd:YAG and 755 nm alexandrite lasers under relatively high fluence conditions: quantitative and histological assessments.

PubMed

Lee, Ju Hwan; Park, So Ra; Jo, Jeong Ho; Park, Sung Yun; Seo, Young Kwon; Kim, Sung Min

2014-07-01

The purpose of this study was to compare degrees of epidermal/dermal tissue damage quantitatively and histologically after laser irradiation, to find ideal treatment conditions with relatively high fluence for skin rejuvenation. A number of recent studies have evaluated the clinical efficacy and safety of therapeutic lasers under relatively low fluence conditions. We transmitted the long-pulsed 1064 nm Nd:YAG and 755 nm Alexandrite lasers into pig skin according to different fluences and spot diameters, and estimated epidermal/dermal temperatures. Pig skin specimens were stained with hematoxylin and eosin for histological assessments. The fluence conditions comprised 26, 30, and 36 J/cm2, and the spot diameter conditions were 5, 8, and 10 mm. Pulse duration was 30 ms for all experiments. Both lasers produced reliable thermal damage on the dermis without any serious epidermal injuries, under relatively high fluence conditions. The 1064 nm laser provided more active fibrous formations than the 755 nm laser, while higher risks for tissue damages simultaneously occurred. The ideal treatment conditions for skin rejuvenation were 8 mm diameter with 30 J/cm2 and 10 mm diameter with 26 J/cm2 for the 1064 nm laser, and 8 mm diameter with 36 J/cm2 and 10 mm diameter with 26 J/cm2 for the 755 nm laser.

The study of optical property of sapphire irradiated with 73 MeV Ca ions

NASA Astrophysics Data System (ADS)

Yang, Yitao; Zhang, Chonghong; Song, Yin; Gou, Jie; Liu, Juan; Xian, Yongqiang

2015-12-01

Single crystals of sapphire were irradiated with 73 MeV Ca ions at room temperature to the fluences of 0.1, 0.5 and 1.0 × 1014 ions/cm2. Optical properties of these samples were characterized by ultraviolet-visible spectrometry (UV-VIS) and fluorescence spectrometer (PL). In UV-VIS spectra, it is observed the absorbance bands from oxygen single vacancy (F and F+ color centers) and vacancy pair (F2+ and F22+ color centers). The oxygen single vacancy initially increases rapidly and then does not increase in the fluence range from 0.1 to 0.5 × 1014 ions/cm2. When the fluence is higher than 0.5 × 1014 ions/cm2, oxygen single vacancy starts to increase again. Oxygen vacancy pair increases monotonically with fluence for all irradiated samples. The variation of oxygen single vacancy with fluence is probably associated with the recombination of oxygen vacancies with Al interstitials and complex defect formation (such as vacancy clusters). From PL spectra, two emission bands around 3.1 and 2.34 eV are observed. The PL intensity of the emission band around 3.1 eV decreases for all the irradiated samples. For the emission band around 2.34 eV, the PL intensity initially decreases, and then increases with fluence. Meanwhile, the peak position of the emission band around 2.34 eV gradually shifts to high energy direction with increase of fluence. The decrease of the intensity of the emission bands around 3.1 and 2.34 eV could be induced by stress from the damage layer in the irradiated samples. The shift of peak position for the emission band around 2.34 eV is induced by the appearance of emission band from Al interstitials.

Modeling the pulsed light inactivation of microorganisms naturally occurring on vegetable substrates.

PubMed

Izquier, Adriana; Gómez-López, Vicente M

2011-09-01

Pulsed light (PL) is a fast non-thermal method for microbial inactivation. This research studied the kinetics of PL inactivation of microorganisms naturally occurring in some vegetables. Iceberg lettuce, white cabbage and Julienne-style cut carrots were subjected to increasing PL fluences up to 12J/cm(2) in order to study its effect on aerobic mesophilic bacteria determined by plate count. Also, sample temperature increase was determined by infrared thermometry. Survivors' curves were adjusted to several models. No shoulder but tail was observed. The Weibull model showed good fitting performance of data. Results for lettuce were: goodness-of-fit parameter RMSE=0.2289, fluence for the first decimal reduction δ=0.98±0.80J/cm(2) and concavity parameter p=0.33±0.08. Results for cabbage were: RMSE=0.0725, δ=0.81±0.23J/cm(2) and p=0.30±0.02; and for carrot: RMSE=0.1235, δ=0.39±0.24J/cm(2) and p=0.23±0.03. For lettuce, a log-linear and tail model was also suitable. Validation of the Weibull model produced determination coefficients of 0.88-0.96 and slopes of 0.78-0.99. Heating was too low to contribute to inactivation. A single low-energy pulse was enough to achieve one log reduction, with an ultrafast treatment time of 0.5ms. While PL efficacy was found to be limited to high residual counts, the achievable inactivation level may be considered useful for shelf-life extension. Copyright © 2011 Elsevier Ltd. All rights reserved.

Absorption and photoluminescence study of Al 2O 3 single crystal irradiated with fast neutrons

NASA Astrophysics Data System (ADS)

Izerrouken, M.; Benyahia, T.

2010-10-01

Colour centers formation in Al 2O 3 by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation's were performed at 40 °C, up to fast neutron ( E n > 1.2 MeV) fluence of 1.4 × 10 18 n cm -2. After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F + center starts to aggregate to F center clusters (F 2, F 2+ and F22+). These aggregates disappear completely above 650 °C whereas the F and F + centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F 2 center and interstitial Ali+ ions.

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

NASA Astrophysics Data System (ADS)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Ion-irradiation-induced damage of steels characterized by means of nanoindentation

NASA Astrophysics Data System (ADS)

Heintze, C.; Recknagel, C.; Bergner, F.; Hernández-Mayoral, M.; Kolitsch, A.

2009-05-01

Self-ion irradiation was used to simulate the damage caused by fast neutrons in the austenitic stainless steel SS 304 SA, the ferritic/martensitic steel Eurofer'97 and a Fe-9 at.%Cr model alloy. The irradiation-induced hardness change in the damage layer was evaluated by means of nanoindentation. Three-step irradiations were performed at room temperature and 300 °C up to 1 and 10 dpa. An irradiation-induced hardness change was shown for all materials. No influence of irradiation temperature could be resolved. Irradiation-induced hardening exhibits different fluence dependencies in Eurofer'97 and Fe-9 at.%Cr. While the data indicate a saturation-like behaviour for Fe-9 at.%Cr, an increase of hardness with fluence up to 10 dpa was found for Eurofer'97.

Thermoluminescent response of LiF:Mg,Ti to 20 keV electrons.

PubMed

Mercado-Uribe, H; Brandan, M E

2002-01-01

The thermoluminescence response of LiF:Mg,Ti (TLD-100) to 20 keV electrons from a scanning electron microscope has been measured. Radiochromic dye films previously calibrated were used to determine the fluence incident on TLD-100 chips. The procedure for irradiation and glow curve deconvolution was adhered to the protocols previously determined in our laboratory for gamma rays and heavy charged particles. The response at electron fluences higher than 4 x 10(10) cm(-2) is supralinear, due to the increasingly relevant contribution of the high temperature peaks. The relative contribution of the high temperature peaks to the TL signal is abnormally small, about half that observed in gamma irradiation and four times smaller than what has been measured in low-energy X ray exposure.

Characterization of measurement artefacts in fluoroptic temperature sensors: implications for laser thermal therapy at 810 nm.

PubMed

Davidson, Sean R H; Vitkin, I Alex; Sherar, Michael D; Whelan, William M

2005-04-01

Fluoroptic sensors are used to measure interstitial temperatures but their utility for monitoring laser interstitial thermal therapy (LITT) is unclear because these sensors exhibit a measurement artefact when exposed to the near-infrared (NIR) treatment light. This study investigates the cause of the artefact to determine whether fluoroptic sensors can provide reliable temperature measurements during LITT. The temperature rise measured by a fluoroptic sensor irradiated in non-absorbing media (air and water) was considered an artefact. Temperature rise was measured as a function of distance from a laser source. Two different sensor designs and several laser powers were investigated. A relationship between fluence rate and measurement artefact in water was determined and coupled with a numerical simulation of LITT in liver to estimate the error in temperature measurements made by fluoroptic sensors in tissue in proximity to the laser source. The effect of ambient light on the performance of sensors capped with a transparent material ("clear-capped sensors") was also investigated. The temperature rise recorded in air by both clear- and black-capped fluoroptic sensors decreased with distance from a laser source in a manner similar to fluence rate. Sensor cap material, laser power, and the thermal properties of the surrounding medium affected the magnitude of the artefact. Numerical simulations indicated that the accuracy of a clear-capped fluoroptic sensor used to monitor a typical LITT treatment in liver is > 1 degrees C provided the sensor is further than approximately 3 mm from the source. It was also shown that clear-capped fluoroptic sensors are affected by ambient light. The measurement artefact experienced by both black-capped and clear-capped fluoroptic sensors irradiated by NIR light scales with fluence rate and is due to direct absorption of the laser light, which results in sensor self-heating. Clear-capped fluoroptic sensors can be used to accurately monitor LITT in tissue but should be shielded from ambient light. Copyright 2005 Wiley-Liss, Inc.

Optically dark excitonic states mediated exciton and biexciton valley dynamics in monolayer WSe₂.

PubMed

Zhang, Minghua; Fu, Jiyong; Dias, A C; Qu, Fanyao

2018-05-18

We present a theory to address the photoluminescence (PL) intensity and valley polarization (VP) dynamics in monolayer WSe$_2$, under the impact of excitonic dark states of both excitons and biexcitons. We find that the PL intensity of all excitonic channels including intravalley exciton (X$_{\\rm b}$), intravalley biexciton (XX$_{\\rm k,k}$) and intervalley biexciton (XX$_{\\rm k,k^\\prime}$) in particular for the {XX$_{\\rm k,k}$} PL is enhanced by laser excitation fluence. In addition, our results indicate the anomalous temperature dependence of PL, i.e., increasing with temperature, as a result of favored phonon assisted dark-to-bright scatterings at high temperatures. Moreover, we observe that the PL is almost immune to intervalley scatterings, which trigger the exchange of excitonic states between the two valleys. As far as the valley polarization is concerned, we find that the VP of X$_{\\rm b}$ shrinks as temperature increases, exhibiting opposite temperature response to PL, while the intravalley XX$_{\\rm k,k}$ VP is found almost independent of temperature. In contrast to both X$_{\\rm b}$ and XX$_{\\rm k,k}$, the intervalley XX$_{\\rm k,k^\\prime}$ VP identically vanishes, because of equal populations of excitons in the $K$ and $K^\\prime$ valleys bounded to form intervalley biexcitons. Notably, it is found that the X$_{\\rm b}$ VP much more strongly depends on bright-dark scattering than that of {XX$_{\\rm k,k}$}, making dark state act as a robust reservoir for valley polarization against intervalley scatterings for X$_{\\rm b}$ at strong bright-dark scatterings, but not for XX$_{\\rm k,k}$. Dark excitonic states enabled enhancement of VP benefits quantum technology for information processing based on the valley degree of freedom in valleytronic devices. Furthermore, the VP has strong dependence on intervalley scattering but maintains essentially constant with excitation fluence. Finally, the time evolution of PL and VP, depending on temperature and excitation fluence, is discussed. © 2018 IOP Publishing Ltd.

Valine radiolysis by MeV ions

NASA Astrophysics Data System (ADS)

Da Silveira, Enio

2016-07-01

Valine, (CH3)2 CHCH (NH2) COOH, is a protein amino acid that has been identified in extraterrestrial environments and in the Murchison meteorite [1]. The knowledge of half-lives of small organic molecules under ionizing radiation is important for the setup of models describing the spread out of prebiotics across the Solar System or the Galaxy. We have investigated typical effects of MeV cosmic ray ions on prebiotic molecules in laboratory by impinging ions produced by the PUC-Rio Van de Graaff accelerator. Pure valine films, deposited by evaporation on KBr substrates, were irradiated by H ^{+}, He ^{+} and N ^{+} ion beams, from 0.5 to 1.5 MeV and up to a fluence of 10 ^{15} projectiles/cm ^{2}. The sample temperature was varied from 10 K to 300 K. The irradiation was interrupted several times for Mid-FTIR analysis of the sample. The main findings are: 1- The column density of the valine decreases exponentially with fluence. 2- In some cases, a second exponential appears in the beginning of irradiation; this feature has been attributed to sample compaction by the ion beam [2]. 3- Destruction cross sections of valine are in the 10 ^{-15} cm ^{2} range, while compaction cross sections are in the 10 ^{-14} cm ^{2} range. 4- Destruction cross section increases with the stopping power of the beam and also with the sample temperature. 5- Surprisingly, during the radiolysis of valine, just CO _{2} is seen by as a daughter molecule formed in the bulk. 6- After long beam fluence, also a CO peak appears in the infrared spectrum; this species is however interpreted as a fragment of the formed CO2 molecules. 7- Considering the flux ratio between laboratory experiments and actual galactic cosmic rays, half-life of valine is predicted for ISM conditions [3]. This work on pure valine is the first measurement of a series. New experiments are planned for determining cross sections of valine dissolved in H _{2}O or CO _{2}, inspired by the study performed for glycine [4]. [1] P. Ehrenfreund and S. B. Charnley, Annu. Rev. Astron. Astrophys. 2000. 38:427. [2] C. Mejía et al., Icarus 250 (2015) 222. [3] D. P. P. Andrade et al., Mon. Not. R. Astron. Soc. 430 (2013) 787. [4] P. A. Gerakines and R. L. Hudson, Icarus 252 (2015) 466. Acknowledgments. The agencies CNPq (INEspaço) and FAPERJ are acknowledged for partial support to this work.

Ultrafast demagnetization at high temperatures

NASA Astrophysics Data System (ADS)

Hoveyda, F.; Hohenstein, E.; Judge, R.; Smadici, S.

2018-05-01

Time-resolved pump-probe measurements were made at variable heat accumulation in Co/Pd superlattices. Heat accumulation increases the baseline temperature and decreases the equilibrium magnetization. Transient ultrafast demagnetization first develops with higher fluence in parallel with strong equilibrium thermal spin fluctuations. The ultrafast demagnetization is then gradually removed as the equilibrium temperature approaches the Curie temperature. The transient magnetization time-dependence is well fit with the spin-flip scattering model.

Modification of local order in FePd films by low energy He{sup +} irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merkel, D. G.; Tancziko, F.; Sajti, Sz.

2008-07-01

Owing to their strong perpendicular magnetic anisotropy, FePd, CoPd, and their Co(Fe)Pt counterparts are candidate materials for ultrahigh density magnetic recording. The stability and magnetic properties of such films are largely dependent on the orientation and local distribution of the L1{sub 0} FePd phase fraction. Therefore, the formation and transformation of the L1{sub 0} phase in such thin films have been the subject of continued interest. Highly ordered epitaxial FePd(001) thin films (with an L1{sub 0} phase fraction of 0.81) were prepared by molecular-beam epitaxy on a MgO(001) substrate. The effect of postgrown room temperature, 130 keV He{sup +} irradiationmore » was investigated at fluences up to 14.9x10{sup 15} ions/cm{sup 2}. X-ray diffraction and conversion electron Moessbauer spectroscopy revealed that with increasing fluence, the L1{sub 0} FePd phase decomposes into the face centered cubic phase with random Fe and Pd occupation of the sites. A partially ordered local environment exhibiting a large hyperfine magnetic field also develops. Upon He{sup +} irradiation, the lattice parameter c of the FePd L1{sub 0} structure increases and the long range order parameter S steeply decreases. The Fe-Fe nearest-neighbor coordination in the Fe-containing environments increases on average from Fe{sub 47}Pd{sub 53} to Fe{sub 54}Pd{sub 46}, indicating a tendency of formation iron-rich clusters. The equilibrium parameters corresponding to the equiatomic L1{sub 0} phase were found at different fluences by conversion electron Moessbauer spectroscopy and by x-ray diffraction a difference, from which a plane-perpendicular compressive stress and a corresponding in-plane tensile stress are conjectured. The steep increase in the interface roughness above 7.4x10{sup 15} ions/cm{sup 2} is interpreted as a percolation-type behavior related to the high diffusion anisotropy in the L1{sub 0} phase.« less

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian

2016-08-09

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantationmore » process.« less

Laser induced extraplanar propulsion for three-dimensional microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Birnbaum, A. J.; Pique, A.

The laser induced extraplanar propulsion process is presented for the creation of controllable three-dimensional deformation of on-substrate components. It is demonstrated that the process is compatible with transparent substrates and ductile materials and is highly controllable in terms of the desired deformation via the adjustment of incident laser energy density. Copper films with thicknesses varying from 0.1-1 {mu}m are deformed over bending angles ranging from 0 deg. - 180 deg. A 355 nm laser at fluences ranging from 10-40 mJ/cm{sup 2} is used in conjunction with an indium-tin-oxide propulsion layer to demonstrate the process. Characterization is performed via electron andmore » laser confocal microscopy.« less

Comparison of Epidermal/Dermal Damage Between the Long-Pulsed 1064 nm Nd:YAG and 755 nm Alexandrite Lasers Under Relatively High Fluence Conditions: Quantitative and Histological Assessments

PubMed Central

Lee, Ju Hwan; Park, So Ra; Jo, Jeong Ho; Park, Sung Yun; Seo, Young Kwon

2014-01-01

Abstract Objective: The purpose of this study was to compare degrees of epidermal/dermal tissue damage quantitatively and histologically after laser irradiation, to find ideal treatment conditions with relatively high fluence for skin rejuvenation. Background data: A number of recent studies have evaluated the clinical efficacy and safety of therapeutic lasers under relatively low fluence conditions. Methods: We transmitted the long-pulsed 1064 nm Nd:YAG and 755 nm Alexandrite lasers into pig skin according to different fluences and spot diameters, and estimated epidermal/dermal temperatures. Pig skin specimens were stained with hematoxylin and eosin for histological assessments. The fluence conditions comprised 26, 30, and 36 J/cm2, and the spot diameter conditions were 5, 8, and 10 mm. Pulse duration was 30 ms for all experiments. Results: Both lasers produced reliable thermal damage on the dermis without any serious epidermal injuries, under relatively high fluence conditions. The 1064 nm laser provided more active fibrous formations than the 755 nm laser, while higher risks for tissue damages simultaneously occurred. Conclusions: The ideal treatment conditions for skin rejuvenation were 8 mm diameter with 30 J/cm2 and 10 mm diameter with 26 J/cm2 for the 1064 nm laser, and 8 mm diameter with 36 J/cm2 and 10 mm diameter with 26 J/cm2 for the 755 nm laser. PMID:24992273

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

NASA Astrophysics Data System (ADS)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Structure changes in steels and hard metal induced by nanosecond and femtosecond laser processing

NASA Astrophysics Data System (ADS)

Dumitru, Gabriel; Romano, Valerio; Weber, Heinz P.; Haefke, Henry; Gerbig, Yvonne; Sentis, Marc L.; Hermann, Joerg; Bruneau, Sebastien

2003-11-01

Investigations on the occurrence of structure and hardness changes (for two sorts of steel and for a hard metal substrate) in the immediate vicinity of laser induced craters are presented in this work. Experiments with femtosecond pulses were performed in air with a Ti:sapphire laser (800 nm, 100 fs) at mean fluences of 2, 5 and 10 J/cm2. Series of microcraters were induced with 100 to 5,000 laser pulses per hole. Experiments with similar fluences, but 10 to 40 pules per hole, were performed on the same materials using a Nd:YAG delivering 100 ns pulese. After laser irradiation, cuts were made through the processed samples and the changes occurred in the crystalline structure of the target materials were evidenced by metallographical analysis of the resulting cross-sections. Hardness measurements were performed in points situated in the immediate vicinity of the laser-induced pores. Affected zones in the material surrounding laser induced pores were always found in the ns-regime, however with different properties for various laser parameters. In the fs-regime, zones of modified materials were also found and in such zones a significant hardness increasing was evidenced; the limit of the low fluences regime, where no structure changes occurred, was found to be slightly above 2 J/cm2.

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Hydrogen ion-driven permeation in carbonaceous films

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Holland, D. F.; Longhurst, G. R.

1989-04-01

This paper presents the results of investigations into the permeation properties of amorphous carbonaceous, a-C: H, films produced by plasmachemical deposition techniques. Carbonaceous films on iron substrates with thickness ranging from 60 nm to 110 nm were subjected to high fluence implantations with mass analyzed D +3 ions with energies ranging from 600 eV to 3000 eV and fluxes ranging from 5 × 10 14D/ cm2 s to 5 × 10 15D/ cm2 s, respectively. Deuterium re-emission upstream, deuterium permeation downstream and secondary ions sputtered from the implantation surface were measured as a function of implantation fluence for specimens at 420 K. The present studies indicate that the a-C : H film permeability is directly related to the time, hence the fluence, required to achieve isotopic replacement and saturation of the deuterium ion beam atoms stopped in the implant region. Once the deuterium saturation level is achieved in the layer, a significant fraction of the implanting ions can result in permeation. For the present experiment, this permeation factor was much higher than that for uncoated iron specimens subjected to similar beam conditions. Carbon sputter yields of 0.008-0.01 C/D were determined in this work for 1000-eV to 400-eV deuterium ions incident on a-C : H films.

Thermal annealing and SHI irradiation induced modifications in sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.

2017-09-01

In the present work, we study the annealing and swift heavy ion (SHI) beam induced modifications in the optical and structural properties of sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite (NCs) thin films. The NCs thin films were synthesized by electron-beam evaporation technique at room temperature with ∼30 nm thickness for both carbon layer and ∼6 nm for gold layer. Gold-carbon NCs thin films were annealed in the presence of argon at a temperature of 500 °C, 600 °C and 750 °C. The NCs thin films were also irradiated with 90 MeV Ni ions beam with different ion fluences in the range from 3 × 1012, 6 × 1012 and 1 × 1013 ions/cm2. Surface plasmon resonance (SPR) of Au nanoparticles are not observed in the pristine film but, after annealing at temperature of 600 °C and 750 °C, it was clearly seen at ∼534 nm as confirmed by UV-visible absorption spectroscopy. 90 MeV Ni irradiated thin film at the fluence of 1 × 1013 ions/cm2 also show strong absorption band at ∼534 nm. The growth and size of Au nanoparticle for pristine and 90 MeV Ni ion irradiated thin film with fluence of 1 × 1013 ions/cm2, were estimated by Transmission electron microscopy (TEM) images with the bi-model distribution. The size of the gold nanoparticle (NPs) was found to be ∼4.5 nm for the pristine film and ∼5.4 nm for the irradiated film at a fluence of 1 × 1013 ions/cm2. The thickness and metal atomic fraction in carbon matrix were estimated by Rutherford backscattering spectroscopy (RBS). The effect of annealing as well as heavy ion irradiation on D and G band of carbon matrix were studied by Raman spectroscopy.

Helium retention behavior in simultaneously He+-H2+ irradiated tungsten

NASA Astrophysics Data System (ADS)

Zhou, Qilai; Azuma, Keisuke; Togari, Akihiro; Yajima, Miyuki; Tokitani, Masayuki; Masuzaki, Suguru; Yoshida, Naoaki; Hara, Masanori; Hatano, Yuji; Oya, Yasuhisa

2018-04-01

The purpose of this study is to elucidate helium (He) retention behavior in tungsten (W) under simultaneous He and hydrogen (H) irradiation. Polycrystalline-W was irradiated by He+ and H2+ simultaneously with the energy of 1.0 keV and 3.0 keV. He+ fluences were (0.5, 1.0, 10) × 1021 He+ m-2 and H2+ fluence was 1.0 × 1022 H+ m-2,respectively. After irradiation, He desorption behavior was investigated by high temperature thermal desorption spectroscopy (HT-TDS) in the temperature range of R.T.-1773 K. Micro-structure changes of W after irradiation were observed by TEM. It was found that simultaneous irradiation with different H2+ energy significantly changed He retention behavior. 1.0 keV H2+ suppressed the He bubble growth and no bubbles can be observed at room temperature. On the other hand, 3.0 keV H2+ facilitated the formation of He bubbles and increased the He retention due to the additional damage introduction by energetic H2+.

A review of colour center and nanostructure creation in LiF under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Schwartz, K.; Maniks, J.; Manika, I.

2015-09-01

A study of radiation damage in LiF crystals under irradiation with MeV-GeV energy ions, from 12C to 238U, at temperatures varying from 8 to 300 K, depending on the ion energy, energy loss and irradiation temperature, is presented. For light ions (12C, 14N) at low fluences, it is mainly color centers that are created. Increasing the fluence leads to the overlapping of tracks and the creation of more complex color centers, defect aggregates and dislocations. For ions with an energy loss above a threshold value (dE/dx = 10 keV nm-1) the tracks exhibit a central core damage region with a radius of 1-2 nm, surrounded by an extended halo which mainly contains single color centers. In this case, ion-induced nanostructuring is observed. Novel effects of radiation damage creation under ion irradiation at 8 K are observed. The role of energy loss and irradiation temperature in damage creation is discussed.

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

NASA Astrophysics Data System (ADS)

Piccinini, M.; Ambrosini, F.; Ampollini, A.; Bonfigli, F.; Libera, S.; Picardi, L.; Ronsivalle, C.; Vincenti, M. A.; Montereali, R. M.

2015-04-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 1011-1015 protons/cm2. The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F2 and F3+ photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences.

Irradiation effects on 17-7 PH stainless steel, A-201 carbon steel, and titanium-6-percent-aluminum-4-percent-vanadium alloy

NASA Technical Reports Server (NTRS)

Hasse, R. A.; Hartley, C. B.

1972-01-01

Irradiation effects on three materials from the NASA Plum Brook Reactor Surveillance Program were determined. An increase of 105 K in the nil-ductility temperature for A-201 steel was observed at a fluence of approximately 3.1 x 10 to the 18th power neutrons/sq cm (neutron energy E sub n greater than 1.0 MeV). Only minor changes in the mechanical properties of 17-7 PH stainless steel were observed up to a fluence of 2 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV). The titanium-6-percent-aluminum-4-percent-vanadium alloy maintained its notch toughness up to a fluence of 1 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV).

Solar Disinfection of Viruses in Polyethylene Terephthalate Bottles

PubMed Central

Carratalà, Anna; Dionisio Calado, Alex; Mattle, Michael J.; Meierhofer, Regula; Luzi, Samuel

2015-01-01

Solar disinfection (SODIS) of drinking water in polyethylene terephthalate (PET) bottles is a simple, efficient point-of-use technique for the inactivation of many bacterial pathogens. In contrast, the efficiency of SODIS against viruses is not well known. In this work, we studied the inactivation of bacteriophages (MS2 and ϕX174) and human viruses (echovirus 11 and adenovirus type 2) by SODIS. We conducted experiments in PET bottles exposed to (simulated) sunlight at different temperatures (15, 22, 26, and 40°C) and in water sources of diverse compositions and origins (India and Switzerland). Good inactivation of MS2 (>6-log inactivation after exposure to a total fluence of 1.34 kJ/cm2) was achieved in Swiss tap water at 22°C, while less-efficient inactivation was observed in Indian waters and for echovirus (1.5-log inactivation at the same fluence). The DNA viruses studied, ϕX174 and adenovirus, were resistant to SODIS, and the inactivation observed was equivalent to that occurring in the dark. High temperatures enhanced MS2 inactivation substantially; at 40°C, 3-log inactivation was achieved in Swiss tap water after exposure to a fluence of only 0.18 kJ/cm2. Overall, our findings demonstrate that SODIS may reduce the load of single-stranded RNA (ssRNA) viruses, such as echoviruses, particularly at high temperatures and in photoreactive matrices. In contrast, complementary measures may be needed to ensure efficient inactivation during SODIS of DNA viruses resistant to oxidation. PMID:26497451

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

NASA Astrophysics Data System (ADS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-09-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.

The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrider, Keegan J.; Yalisove, Steven M.; Torralva, Ben

2015-09-21

The dynamics of femtosecond laser removal of 20 nm Ni films on glass substrates was studied using time-resolved pump-probe microscopy. 20 nm thin films exhibit removal at two distinct threshold fluences, removal of the top 7 nm of Ni above 0.14 J/cm{sup 2}, and removal of the entire 20 nm film above 0.36 J/cm{sup 2}. Previous work shows the top 7 nm is removed through liquid spallation, after irradiation the Ni melts and rapidly expands leading to tensile stress and cavitation within the Ni film. This work shows that above 0.36 J/cm{sup 2} the 20 nm film is removed in two distinct layers, 7 nm and 13 nm thick. The topmore » 7 nm layer reaches a speed 500% faster than the bottom 13 nm layer at the same absorbed fluence, 500–2000 m/s and 300–700 m/s in the fluence ranges studied. Significantly different velocities for the top 7 nm layer and bottom 13 nm layer indicate removal from an interface occurs by a different physical mechanism. The method of measuring film displacement from the development of Newton's rings was refined so it could be shown that the 13 nm layer separates from the substrate within 70 ps and accelerates to its final velocity within several hundred picoseconds. We propose that removal of the bottom 13 nm is consistent with heterogeneous nucleation and growth of vapor at the Ni-glass interface, but that the rapid separation and acceleration of the 13 nm layer from the Ni-glass interface requires consideration of exotic phases of Ni after excitation.« less

Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE

NASA Astrophysics Data System (ADS)

Beaton, Daniel A.; Steger, M.; Christian, T.; Mascarenhas, A.

2018-02-01

In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs1-xBix epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beaton, Daniel A.; Steger, M.; Christian, T.

In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs 1-xBi x epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE

DOE PAGES

Beaton, Daniel A.; Steger, M.; Christian, T.; ...

2017-12-14

In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs 1-xBi x epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

2018-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, S., E-mail: rapp@hm.edu; Erlangen Graduate School in Advanced Optical Technologies; Heinrich, G.

2015-03-14

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deepermore » understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.« less

Target Plate Material Influence on Fullerene-C60 Laser Desorption/Ionization Efficiency

NASA Astrophysics Data System (ADS)

Zeegers, Guido P.; Günthardt, Barbara F.; Zenobi, Renato

2016-04-01

Systematic laser desorption/ionization (LDI) experiments of fullerene-C60 on a wide range of target plate materials were conducted to gain insight into the initial ion formation in matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. The positive and negative ion signal intensities of precursor, fragment, and cluster ions were monitored, varying both the laser fluence (0-3.53 Jcm-2) and the ion extraction delay time (0-950 ns). The resulting species-specific ion signal intensities are an indication for the ionization mechanisms that contribute to LDI and the time frames in which they operate, providing insight in the (MA)LDI primary ionization. An increasing electrical resistivity of the target plate material increases the fullerene-C60 precursor and fragment anion signal intensity. Inconel 625 and Ti90/Al6/V4, both highly electrically resistive, provide the highest anion signal intensities, exceeding the cation signal intensity by a factor ~1.4 for the latter. We present a mechanism based on transient electrical field strength reduction to explain this trend. Fullerene-C60 cluster anion formation is negligible, which could be due to the high extraction potential. Cluster cations, however, are readily formed, although for high laser fluences, the preferred channel is formation of precursor and fragment cations. Ion signal intensity depends greatly on the choice of substrate material, and careful substrate selection could, therefore, allow for more sensitive (MA)LDI measurements.

Radiation-Induced Changes in Quartz, A Mineral Analog of Nuclear Power Plant Concrete Aggregates.

PubMed

Silva, Chinthaka M; Rosseel, Thomas M; Kirkegaard, Marie C

2018-03-19

Quartz single-crystal samples consisting of α-quartz crystal structure were neutron irradiated to fluences of 5 × 10 18 , 4 × 10 19 , and 2 × 10 20 n/cm 2 (E > 0.1 MeV) at two temperatures (52 and 95 °C). The changes in the α-quartz phase as a function of these two conditions (temperature and fluence) were studied using X-ray powder diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM), and the results acquired using these complementary techniques are presented in a single place for the first time. XRD studies showed that the lattice parameters of α-quartz increased with increasing neutron flux. The lattice growth was larger for the samples that were neutron irradiated at 52 °C than at 95 °C. Moreover, an amorphous content was determined in the quartz samples neutron irradiated at 4 × 10 19 n/cm 2 , with the greater amount being in the 52 °C irradiated sample. Complete amorphization of quartz was observed at a fluence of 2 × 10 20 n/cm 2 (E > 0.1 MeV) using XRD and confirmed by TEM characterization and Raman spectroscopic studies. The cause for α-quartz lattice expansion and sample amorphization was also explored using XRD and Raman spectroscopic studies.

Deep-tissue temperature mapping by multi-illumination photoacoustic tomography aided by a diffusion optical model: a numerical study

NASA Astrophysics Data System (ADS)

Zhou, Yuan; Tang, Eric; Luo, Jianwen; Yao, Junjie

2018-01-01

Temperature mapping during thermotherapy can help precisely control the heating process, both temporally and spatially, to efficiently kill the tumor cells and prevent the healthy tissues from heating damage. Photoacoustic tomography (PAT) has been used for noninvasive temperature mapping with high sensitivity, based on the linear correlation between the tissue's Grüneisen parameter and temperature. However, limited by the tissue's unknown optical properties and thus the optical fluence at depths beyond the optical diffusion limit, the reported PAT thermometry usually takes a ratiometric measurement at different temperatures and thus cannot provide absolute measurements. Moreover, ratiometric measurement over time at different temperatures has to assume that the tissue's optical properties do not change with temperatures, which is usually not valid due to the temperature-induced hemodynamic changes. We propose an optical-diffusion-model-enhanced PAT temperature mapping that can obtain the absolute temperature distribution in deep tissue, without the need of multiple measurements at different temperatures. Based on the initial acoustic pressure reconstructed from multi-illumination photoacoustic signals, both the local optical fluence and the optical parameters including absorption and scattering coefficients are first estimated by the optical-diffusion model, then the temperature distribution is obtained from the reconstructed Grüneisen parameters. We have developed a mathematic model for the multi-illumination PAT of absolute temperatures, and our two-dimensional numerical simulations have shown the feasibility of this new method. The proposed absolute temperature mapping method may set the technical foundation for better temperature control in deep tissue in thermotherapy.

Effect of 100 MeV Ag+7 ion irradiation on the bulk and surface magnetic properties of Co-Fe-Si thin films

NASA Astrophysics Data System (ADS)

Hysen, T.; Geetha, P.; Al-Harthi, Salim; Al-Omari, I. A.; Lisha, R.; Ramanujan, R. V.; Sakthikumar, D.; Avasthi, D. K.; Anantharaman, M. R.

2014-12-01

Thin films of Co-Fe-Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag+7 ions at fluences of 1×1011, 1×1012 and 1×1013 ions/cm2. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag7+ ions modifies the surface morphology. Irradiating with ions at fluences of 1×1011 ions/cm2 smoothens the mesoscopic hill-like structures, and then, at 1×1012 ions/cm2 new surface structures are created. When the fluence is further increased to 1×1013 ions/cm2 an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×1011 ions/cm2, 1×1012 ions/cm2 and 1×1013 ions/cm2 the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation.

Laser-enhanced high-intensity focused ultrasound heating in an in vivo small animal model

NASA Astrophysics Data System (ADS)

Jo, Janggun; Yang, Xinmai

2016-11-01

The enhanced heating effect during the combination of high-intensity focused ultrasound (HIFU) and low-optical-fluence laser illumination was investigated by using an in vivo murine animal model. The thighs of murine animals were synergistically irradiated by HIFU and pulsed nano-second laser light. The temperature increases in the target region were measured by a thermocouple under different HIFU pressures, which were 6.2, 7.9, and 9.8 MPa, in combination with 20 mJ/cm2 laser exposures at 532 nm wavelength. In comparison with conventional laser therapies, the laser fluence used here is at least one order of magnitude lower. The results showed that laser illumination could enhance temperature during HIFU applications. Additionally, cavitation activity was enhanced when laser and HIFU irradiation were concurrently used. Further, a theoretical simulation showed that the inertial cavitation threshold was indeed decreased when laser and HIFU irradiation were utilized concurrently.

Radiation Stability of Triple Coatings Based on Transition-Metal Nitrides Under Irradiation By Alpha Particles and Argon Ions

NASA Astrophysics Data System (ADS)

Potekaev, A. I.; Kislitsyn, S. B.; Uglov, V. V.; Klopotov, A. A.; Gorlachev, I. D.; Klopotov, V. D.; Grinkevich, L. S.

2016-05-01

The data on the influence of irradiation of (Ti, Cr)N1-x coatings by helium and argon ions on their surface structure are presented. The (Ti, Cr)N1-x coatings 50-300 nm in thickness were formed on carbon steel substrates by vacuum-arc deposition. Irradiation of the coated specimens was performed in a DC-60 heavy-ion accelerator by low-energy 4He+1, 4He+2 and 40Ar5+ ions and high-energy 40Ar5+ ions up to the fluence 1.0·1017 ion/cm2 at the irradiation temperature not higher than 150°C. It is shown that irradiation of the (Ti, Cr)N1-x coating surface by 4He+1, 4He+2 and 40Ar5+ ions with the energy 20 keV/charge does not give rise to any noticeable structural changes nor any surface blistering, while its irradiation by 40Ar5+ ions with the energy 1.50 MeV/amu causes blistering.

Lateral hopping of CO on Cu(111) induced by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Ueba, H.; Ootsuka, Y.; Paulsson, M.; Persson, B. N. J.

2010-09-01

We present a theoretical study of the lateral hopping of a single CO molecule on Cu(111) induced by femtosecond laser pulses by Mehlhorn [Phys. Rev. Lett. 104, 076101 (2010)]10.1103/PhysRevLett.104.076101. Our model assumes an intermode coupling between the CO frustrated translation (FT) and frustrated rotation (FR) modes with a weak and strong electronic friction coupling to hot electrons, respectively, and heat transfer between the FT mode and the substrate phonons. In this model the effective electronic friction coupling of the FT mode depends on the absorbed laser fluence F through the temperature of the FR mode. The calculated hopping yield as a function of F nicely reproduces the nonlinear increase observed above F=4.0J/m2 . It is found that the electronic heating via friction coupling nor the phonon coupling alone cannot explain the experimental result. Both heatings are cooperatively responsible for CO hopping on Cu(111). The electronic heat transfer dominates over the phononic one at high F , where the effective electronic friction coupling becomes larger than the phononic coupling.

Ultrafast momentum imaging of pseudospin-flip excitations in graphene

NASA Astrophysics Data System (ADS)

Aeschlimann, S.; Krause, R.; Chávez-Cervantes, M.; Bromberger, H.; Jago, R.; Malić, E.; Al-Temimy, A.; Coletti, C.; Cavalleri, A.; Gierz, I.

2017-07-01

The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photoexcited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy, and in-plane momentum. We first show that the rapidly-established quasithermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static doping level. Further, we observe pronounced differences in the electron and hole dynamics in n -doped samples. By simulating the Coulomb- and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and doping, and develop a microscopic picture of the carrier dynamics in photoexcited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photocontrol experiments and optoelectronic device applications.

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

NASA Astrophysics Data System (ADS)

Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

2015-05-01

Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

Spatially confined low-power optically pumped ultrafast synchrotron x-ray nanodiffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Joonkyu; Zhang, Qingteng; Chen, Pice

2015-08-27

The combination of ultrafast optical excitation and time-resolved synchrotron x-ray nanodiffraction provides unique insight into the photoinduced dynamics of materials, with the spatial resolution required to probe individual nanostructures or small volumes within heterogeneous materials. Optically excited x-ray nanobeam experiments are challenging because the high total optical power required for experimentally relevant optical fluences leads to mechanical instability due to heating. For a given fluence, tightly focusing the optical excitation reduces the average optical power by more than three orders of magnitude and thus ensures sufficient thermal stability for x-ray nanobeam studies. Delivering optical pulses via a scannable fiber-coupled opticalmore » objective provides a well-defined excitation geometry during rotation and translation of the sample and allows the selective excitation of isolated areas within the sample. Finally, experimental studies of the photoinduced lattice dynamics of a 35 nm BiFeO 3 thin film on a SrTiO 3 substrate demonstrate the potential to excite and probe nanoscale volumes.« less

Investigation of hydrogen concentration and hardness of ion irradiated organically modified silicate thin films

NASA Astrophysics Data System (ADS)

Qi, Y.; Prenzel, T.; Harriman, T. A.; Wang, Y. Q.; Lucca, D. A.; Williams, D.; Nastasi, M.; Dong, J.; Mehner, A.

2010-06-01

A study of the effects of ion irradiation of organically modified silicate thin films on the loss of hydrogen and increase in hardness is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Elastic Recoil Detection (ERD) was used to investigate resulting hydrogen concentration as a function of ion fluence and irradiating species. Nanoindentation was used to measure the hardness of the irradiated films. FT-IR spectroscopy was also used to examine resulting changes in chemical bonding. The resulting hydrogen loss and increase in hardness are compared to similarly processed acid catalyzed silicate thin films.

Atomic oxygen dosimetry measurements made on STS-46 by CONCAP 2

NASA Technical Reports Server (NTRS)

Gregory, J. C.; Miller, G. P.; Pettigrew, P. J.; Raikar, G. N.; Cross, Jon B.; Lan, E.; Renschler, C. L.; Sutherland, W. T.

1995-01-01

With increasing flight duration and the possibility of a permanent facility in space, long-term monitoring of material degradation due to atomic oxygen is increasing in importance. Reliance on models to determine the fluence of atomic oxygen is not only necessarily complex but also imprecise due to the strong dependence of oxygen concentration on day/night, latitude and solar activity. Mass-spectroscopy, the traditional method for determining the gas phase species densities at low pressure, is not only expensive but is limited in the area that it can monitor. Our group has developed a simple and inexpensive dosimeter to measure the atomic oxygen fluence via the change in resistance as the sensor element is gradually oxidized. The sensors consisted of thin-film circuit elements deposited on a suitable substrate. Four-point resistance measurements were used to monitor the change in resistance. Results obtained using silver and carbon dosimeters flown on STS-46 (CONCAP 2-01) will be discussed.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2

NASA Astrophysics Data System (ADS)

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-01

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO2 thin film grown on a rutile TiO2(0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2.

PubMed

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-11

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO 2 thin film grown on a rutile TiO 2 (0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm; pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Erosion and re-deposition of lithium and boron coatings under high-flux plasma bombardment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrams, Tyler Wayne

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Electromagnetic Torque in Tokamaks with Toroidal Asymmetries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Logan, Nikolas Christopher

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Characterization of solar cells for space applications. Volume 6: Electrical characteristics of Spectrolab BSF, BSR, textured, 10 ohm-cm, 50 micron advanced OAST solar cells as a function of intensity, temperature, and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1979-01-01

Electrical parametric data are presented on BSF, BSR, textured 10 ohm cm, 50 micron advanced OAST cells in graphical and tabular form as functions of solar illumination intensity, temperature, and 1 MeV electron fluence.

Phototropin 1 and dim-blue light modulate the red light de-etiolation response.

PubMed

Wang, Yihai; M Folta, Kevin

2014-01-01

Light signals regulate seedling morphological changes during de-etiolation through the coordinated actions of multiple light-sensing pathways. Previously we have shown that red-light-induced hypocotyl growth inhibition can be reversed by addition of dim blue light through the action of phototropin 1 (phot1). Here we further examine the fluence-rate relationships of this blue light effect in short-term (hours) and long-term (days) hypocotyl growth assays. The red stem-growth inhibition and blue promotion is a low-fluence rate response, and blue light delays or attenuates both the red light and far-red light responses. These de-etiolation responses include blue light reversal of red or far-red induced apical hook opening. This response also requires phot1. Cryptochromes (cry1 and cry2) are activated by higher blue light fluence-rates and override phot1's influence on hypocotyl growth promotion. Exogenous application of auxin transport inhibitor naphthylphthalamic acid abolished the blue light stem growth promotion in both hypocotyl growth and hook opening. Results from the genetic tests of this blue light effect in auxin transporter mutants, as well as phytochrome kinase substrate mutants indicated that aux1 may play a role in blue light reversal of red light response. Together, the phot1-mediated adjustment of phytochrome-regulated photomorphogenic events is most robust in dim blue light conditions and is likely modulated by auxin transport through its transporters.

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

NASA Technical Reports Server (NTRS)

Nicoletta, C. A.

1973-01-01

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Solar Disinfection of Viruses in Polyethylene Terephthalate Bottles.

PubMed

Carratalà, Anna; Dionisio Calado, Alex; Mattle, Michael J; Meierhofer, Regula; Luzi, Samuel; Kohn, Tamar

2016-01-01

Solar disinfection (SODIS) of drinking water in polyethylene terephthalate (PET) bottles is a simple, efficient point-of-use technique for the inactivation of many bacterial pathogens. In contrast, the efficiency of SODIS against viruses is not well known. In this work, we studied the inactivation of bacteriophages (MS2 and ϕX174) and human viruses (echovirus 11 and adenovirus type 2) by SODIS. We conducted experiments in PET bottles exposed to (simulated) sunlight at different temperatures (15, 22, 26, and 40°C) and in water sources of diverse compositions and origins (India and Switzerland). Good inactivation of MS2 (>6-log inactivation after exposure to a total fluence of 1.34 kJ/cm(2)) was achieved in Swiss tap water at 22°C, while less-efficient inactivation was observed in Indian waters and for echovirus (1.5-log inactivation at the same fluence). The DNA viruses studied, ϕX174 and adenovirus, were resistant to SODIS, and the inactivation observed was equivalent to that occurring in the dark. High temperatures enhanced MS2 inactivation substantially; at 40°C, 3-log inactivation was achieved in Swiss tap water after exposure to a fluence of only 0.18 kJ/cm(2). Overall, our findings demonstrate that SODIS may reduce the load of single-stranded RNA (ssRNA) viruses, such as echoviruses, particularly at high temperatures and in photoreactive matrices. In contrast, complementary measures may be needed to ensure efficient inactivation during SODIS of DNA viruses resistant to oxidation. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

Deuterium Retention and Physical Sputtering of Low Activation Ferritic Steel

NASA Astrophysics Data System (ADS)

T, Hino; K, Yamaguchi; Y, Yamauchi; Y, Hirohata; K, Tsuzuki; Y, Kusama

2005-04-01

Low activation materials have to be developed toward fusion demonstration reactors. Ferritic steel, vanadium alloy and SiC/SiC composite are candidate materials of the first wall, vacuum vessel and blanket components, respectively. Although changes of mechanical-thermal properties owing to neutron irradiation have been investigated so far, there is little data for the plasma material interactions, such as fuel hydrogen retention and erosion. In the present study, deuterium retention and physical sputtering of low activation ferritic steel, F82H, were investigated by using deuterium ion irradiation apparatus. After a ferritic steel sample was irradiated by 1.7 keV D+ ions, the weight loss was measured to obtain the physical sputtering yield. The sputtering yield was 0.04, comparable to that of stainless steel. In order to obtain the retained amount of deuterium, technique of thermal desorption spectroscopy (TDS) was employed to the irradiated sample. The retained deuterium desorbed at temperature ranging from 450 K to 700 K, in the forms of DHO, D2, D2O and hydrocarbons. Hence, the deuterium retained can be reduced by baking with a relatively low temperature. The fluence dependence of retained amount of deuterium was measured by changing the ion fluence. In the ferritic steel without mechanical polish, the retained amount was large even when the fluence was low. In such a case, a large amount of deuterium was trapped in the surface oxide layer containing O and C. When the fluence was large, the thickness of surface oxide layer was reduced by the ion sputtering, and then the retained amount in the oxide layer decreased. In the case of a high fluence, the retained amount of deuterium became comparable to that of ferritic steel with mechanical polish or SS 316L, and one order of magnitude smaller than that of graphite. When the ferritic steel is used, it is required to remove the surface oxide layer for reduction of fuel hydrogen retention. Ferritic steel sample was exposed to the environment of JFT-2M tokamak in JAERI and after that the deuterium retention was examined. The result was roughly the same as the case of deuterium ion irradiation experiment.

High-fluence Ga-implanted silicon-The effect of annealing and cover layers

NASA Astrophysics Data System (ADS)

Fiedler, J.; Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

2014-07-01

The influence of SiO2 and SiNx cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiOx grown during annealing which only can be avoided by the usage of SiNx cover layers.

Production of sp3 hybridization by swift heavy ion irradiation of HOPG

NASA Astrophysics Data System (ADS)

Zeng, J.; Zhai, P. F.; Liu, J.; Yao, H. J.; Duan, J. L.; Hou, M. D.; Sun, Y. M.; Li, G. P.

2013-07-01

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by swift heavy ions (86Kr, 209Bi and 238U) with the fluence of 1011-1013 ions/cm2 at room temperature. The production of sp3 hybridization by the irradiation process has been confirmed directly by X-ray photoelectron spectroscopy (XPS). In this work, both irradiated and pristine HOPG samples were investigated by XPS and Raman spectroscopy. The existence of sp3 component is confirmed on the surface of the irradiated HOPG samples. XPS result shows that the acreage ratio Isp3/Isp2 increases with the ion fluence and saturates at a higher value of irradiation. It is found that the amount of hybridization (Isp3/Isp2) strongly depends on the electronic energy loss in the sample. Raman spectra of the irradiated samples show the increasing of acreage ratio ID/IG with the ion fluence, which indicates the change of the atomic structure and the phase transition from sp2 to sp3.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

NASA Astrophysics Data System (ADS)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

NASA Astrophysics Data System (ADS)

Dev, B. N.; Banu, Nasrin; Fassbender, J.; Grenzer, J.; Schell, N.; Bischoff, L.; Groetzschel, R.; McCord, J.

2017-10-01

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(15 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 µm wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favour an alignment of magnetization parallel to the stripe axis, the opposite behaviour is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behaviour.

Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

NASA Astrophysics Data System (ADS)

Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

2017-12-01

Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (P<0.05) with increasing ion fluences. Biofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

Ion beam induced defects in solids studied by optical techniques

NASA Astrophysics Data System (ADS)

Comins, J. D.; Amolo, G. O.; Derry, T. E.; Connell, S. H.; Erasmus, R. M.; Witcomb, M. J.

2009-08-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 × 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I3- structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I3- and I5- aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10 15 to 250 × 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.

Surface modification of titanium nitride film by a picosecond Nd:YAG laser

NASA Astrophysics Data System (ADS)

Gakovic, B.; Trtica, M.; Batani, D.; Desai, T.; Panjan, P.; Vasiljevic-Radovic, D.

2007-06-01

The interaction of a picosecond Nd:YAG laser (wavelength 532 nm, pulse duration 40 ps) with a polycrystalline titanium nitride (TiN) film was studied. The TiN thin film was deposited by physical vapour deposition on a silicon substrate. The titanium nitride/silicon system was modified with an energy fluence from 0.2 to 5.9 J cm-2. Multi-pulse irradiation was performed in air by a focused laser beam. Surface modifications were analysed after 1 100 successive laser pulses. Depending on the laser pulse energy and pulse count, the following phenomena were observed: (i) increased surface roughness, (ii) titanium nitride film cracking, (iii) silicon substrate modification, (iv) film exfoliation and (v) laser-induced periodical surface structures on nano- (NPSS) and micro-dimensions (MPSS).

Metal nanostructures with complex surface morphology: The case of supported lumpy Pd and Pt nanoparticles produced by laser processing of metal films

NASA Astrophysics Data System (ADS)

Ruffino, F.; Maugeri, P.; Cacciato, G.; Zimbone, M.; Grimaldi, M. G.

2016-09-01

In this work we report on the formation of lumpy Pd and Pt nanoparticles on fluorine-doped tin oxide/glass (FTO/glass) substrate by a laser-based approach. In general, complex-surface morphology metal nanoparticles can be used in several technological applications exploiting the peculiarities of their physical properties as modulated by nanoscale morphology. For example plasmonic metal nanoparticles presenting a lumpy morphology (i.e. larger particles coated on the surface by smaller particles) can be used in plasmonic solar cell devices providing broadband scattering enhancement over the smooth nanoparticles leading, so, to the increase of the device efficiency. However, the use of plasmonic lumpy nanoparticles remains largely unexplored due to the lack of simply, versatile, low-cost and high-throughput methods for the controllable production of such nanostructures. Starting from these considerations, we report on the observation that nanoscale-thick Pd and Pt films (17.6 and 27.9 nm, 12.1 and 19.5 nm, respectively) deposited on FTO/glass surface irradiated by nanosecond pulsed laser at fluences E in the 0.5-1.5 J/cm2 range, produce Pd and Pt lumpy nanoparticles on the FTO surface. In addition, using scanning electron microscopy analyses, we report on the observation that starting from each metal film of fixed thickness h, the fraction F of lumpy nanoparticles increases with the laser fluence E and saturates at the higher fluences. For each fixed fluence, F was found higher starting from the Pt films (at each starting film thickness h) with respect to the Pd films. For each fixed metal and fluence, F was found to be higher decreasing the starting thickness of the deposited film. To explain the formation of the lumpy Pd and Pt nanoparticles and the behavior of F as a function of E and h both for Pd and Pt, the thermodynamic behavior of the Pd and Pt films and nanoparticles due to the interaction with the nanosecond laser is discussed. In particular, the photothermal vaporization and Coulomb explosion processes of the Pd and Pt nanoparticles are invoked as possible mechanisms for the lumpy nanoparticles formation.

Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO•7Al2O3

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Kamioka, Hayato; Hirano, Masahiro; Kamiya, Toshio; Sushko, Peter V.; Shluger, Alexander L.; Matsunami, Noriaki; Hosono, Hideo

2006-05-01

Implantation of Au+ ions into a single crystalline 12CaO•7Al2O3 (C12A7) was performed at high temperatures with fluences from 1×1014 to 3×1016cm-2 . This material is composed of positively charged sub-nanometer-sized cages compensated by extra-framework negatively charged species. The depth profile of concentrations of Au species was analyzed using Rutherford backscattering spectrometry. The measured optical spectra and ab initio embedded cluster calculations show that the implanted Au species are stabilized in the form of negative Au- ions below the fluences of ˜1×1016cm-2 (Au volume concentration of ˜2×1021cm-3 ). These ions are trapped in the cages and exhibit photoluminescence (PL) bands peaking at 3.05 and 2.34eV at temperatures below 150K . At fluences exceeding ˜3×1016cm-2 , the implanted Au atoms form nano-sized clusters. This is manifested in quenching of the PL bands and creation of an optical absorption band at 2.43eV due to the surface plasmon of free carriers in the cluster. The PL bands are attributed to the charge transfer transitions (Au0+e-→Au-) due to recombination of photo-excited electrons (e-) , transiently transferred by ultraviolet excitation into a nearby cages, with Au0 atoms.

Radiation-Induced Changes in Quartz, A Mineral Analog of Nuclear Power Plant Concrete Aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, Chinthaka M.; Rosseel, Thomas M.; Kirkegaard, Marie C.

Quartz single-crystal samples consisting of α-quartz crystal structure were neutron irradiated to fluences of 5 × 10 18, 4 × 10 19, and 2 × 10 20 n/cm 2 (E > 0.1 MeV) at two temperatures (52 and 95 °C). The changes in the α-quartz phase as a function of these two conditions (temperature and fluence) were studied using X-ray powder diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM), and the results acquired using these complementary techniques are presented in a single place for the first time. XRD studies showed that the lattice parameters of α-quartz increased with increasingmore » neutron flux. The lattice growth was larger for the samples that were neutron irradiated at 52 °C than at 95 °C. Moreover, an amorphous content was determined in the quartz samples neutron irradiated at 4 × 10 19 n/cm 2, with the greater amount being in the 52 °C irradiated sample. Complete amorphization of quartz was observed at a fluence of 2 × 10 20 n/cm 2 (E > 0.1 MeV) using XRD and confirmed by TEM characterization and Raman spectroscopic studies. In conclusion, the cause for α-quartz lattice expansion and sample amorphization was also explored using XRD and Raman spectroscopic studies.« less

Radiation-induced swelling of stainless steel.

PubMed

Shewmon, P G

1971-09-10

Significant swelling (1 to 10 percent due to small voids have been found in stainless steel when it is exposed to fast neutron doses less than expected in commercial fast breeder reactors. The main features of this new effect are: (i) the voids are formed by the precipitation of a small fraction of the radiation-produced vacancies; (ii) the voids form primarily in the temperature range 400 degrees to 600 degrees C (750 degrees to 1100 degrees F); and (iii) the volume increases with dose (fluence) at a rate between linear and parabolic. The limited temperature range of void formation can be explained, but the effects of fluence, microstructure, and composition are determined by a competition between several kinetic processes that are not well understood. This swelling does not affect the feasibility or safety of the breeder reactor,but will have a significant impact on the core design and economics of the breeder.Preliminary results indicate that one cannot eliminate the effect,but cold-working,heat treatment, or small changes in composition can reduce the swelling by a factor of 2 or more. Testing is hampered by the fact that several years in EBR-II are required to accumulate the fluence expected in demonstration plants. Heavyion accelerators,which allow damage rates corresponding to much higher fluxes than those found in EBR-II,hold great promise for short-term tests that will indicate the relative effect of the important variables.

Radiation-Induced Changes in Quartz, A Mineral Analog of Nuclear Power Plant Concrete Aggregates

DOE PAGES

Silva, Chinthaka M.; Rosseel, Thomas M.; Kirkegaard, Marie C.

2018-03-07

Quartz single-crystal samples consisting of α-quartz crystal structure were neutron irradiated to fluences of 5 × 10 18, 4 × 10 19, and 2 × 10 20 n/cm 2 (E > 0.1 MeV) at two temperatures (52 and 95 °C). The changes in the α-quartz phase as a function of these two conditions (temperature and fluence) were studied using X-ray powder diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM), and the results acquired using these complementary techniques are presented in a single place for the first time. XRD studies showed that the lattice parameters of α-quartz increased with increasingmore » neutron flux. The lattice growth was larger for the samples that were neutron irradiated at 52 °C than at 95 °C. Moreover, an amorphous content was determined in the quartz samples neutron irradiated at 4 × 10 19 n/cm 2, with the greater amount being in the 52 °C irradiated sample. Complete amorphization of quartz was observed at a fluence of 2 × 10 20 n/cm 2 (E > 0.1 MeV) using XRD and confirmed by TEM characterization and Raman spectroscopic studies. In conclusion, the cause for α-quartz lattice expansion and sample amorphization was also explored using XRD and Raman spectroscopic studies.« less

Mass spectrometric imaging and laser desorption ionization (LDI) with ice as a matrix using femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Berry, Jamal Ihsan

The desorption of biomolecules from frozen aqueous solutions on metal substrates with femtosecond laser pulses is presented for the first time. Unlike previous studies using nanosecond pulses, this approach produces high quality mass spectra of biomolecules repeatedly and reproducibly. This novel technique allows analysis of biomolecules directly from their native frozen environments. The motivation for this technique stems from molecular dynamics computer simulations comparing nanosecond and picosecond heating of water overlayers frozen on Au substrates which demonstrate large water cluster formation and ejection upon substrate heating within ultrashort timescales. As the frozen aqueous matrix and analyte molecules are transparent at the wavelengths used, the laser energy is primarily absorbed by the substrate, causing rapid heating and explosive boiling of the ice overlayer, followed by the ejection of ice clusters and the entrained analyte molecule. Spectral characteristics at a relatively high fluence of 10 J/cm 2 reveal the presence of large molecular weight metal clusters when a gold substrate is employed, with smaller cluster species observed from frozen aqueous solutions on Ag, Cu, and Pb substrates. The presence of the metal clusters is indicative of an evaporative cooling mechanism which stabiles cluster ion formation and the ejection of biomolecules from frozen aqueous solutions. Solvation is necessary as the presence of metal clusters and biomolecular ion signals are not observed from bare metal substrates in absence of the frozen overlayer. The potential for mass spectrometric imaging with femtosecond LDI of frozen samples is also presented. The initial results for the characterization of peptides and peptoids linked to combinatorial beads frozen in ice and the assay of frozen brain tissue from the serotonin transporter gene knockout mouse via LDI imaging are discussed. Images of very good quality and resolution are obtained with 400 nm, 200 fs pulses at a fluence of 1.25 J/cm2 . An attractive feature of this technique is that images are acquired within minutes for large sample areas. Additionally, the images obtained with femtosecond laser desorption are high in lateral resolution with the laser capable of being focused to a spot size of 30 mum. Femtosecond laser desorption from ice is unique in that unlike matrix assisted laser desorption ionization mass spectrometry, it does not employ an organic UV absorbing matrix to desorb molecular ions. Instead, the laser energy is absorbed by the metal substrate causing explosive boiling and ejection of the frozen overlayer. This approach is significant in that femtosecond laser desorption possess the potential of analyzing and assaying biomolecules directly from their frozen native environments. This technique was developed to compliment existing ToF-SIMS imaging capability for analysis of tissue and cells, as well as other biological systems of interest.

Engineering of pulsed laser deposited calcium phosphate biomaterials in controlled atmospheres

NASA Astrophysics Data System (ADS)

Drukteinis, Saulius E.

Synthetic calcium phosphates (CAP) such as hydroxyapatite (HA) have been used as regenerative bone graft materials and also as thin films to improve the integration of biomedical implant devices within skeletal tissue. Pulsed laser deposition (PLD) can deposit crystalline HA with significant adhesion on titanium biomaterials. However, there are PLD processing constraints due to the complex physical and chemical interactions occurring simultaneously during PLD, which influence ablation plume formation and development. In this investigation PLD CAP films were engineered with a focus on novel decoupling of partial pressure of H2O (g) ( PH2O ) from total background pressure, in combination with substrate heat treatment and laser energy density control. Characterization of these films was performed with X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, and Optical Profilometry. In vitro cellular adhesion testing was also performed using osteoblast (MC3T3) cell lines to evaluate adhesion of bone-forming cells on processed PLD CAP samples. Preferred a-axis orientation films were deposited in H2O (g) saturated atmospheres with reduced laser fluence (< 4 J/cm2). Crystalline HA/tetracalcium phosphate (TTCP) films were deposited in H2O ( g)-deficient atmospheres with higher laser fluence (> 3 J/cm 2). Varied PH2O resulted in control of biphasic HA/TTCP composition with increasing TTCP at lower PH2O . These were dense continuous films composed of micron-scale particles. Cellular adhesion assays did not demonstrate a significant difference between osteoblast adhesion density on HA films compared with biphasic HA/TTCP films. Room temperature PLD at varied PH2O combined with furnace heat treatment resulted in controlled variation in surface amplitude parameters including surface roughness (S a), root mean square (Sq), peak to valley height (St), and ten-point height ( Sz). These discontinuous films were composed of nano-scale particles and resulted in significant osteoblast adhesion compared to control samples or to PLD CAP films deposited on heated substrates. Surface amplitude parameters (Sa, Sq, St, and Sz) correlated with osteoblast adhesion. This new approach of control over H2O ( g) operating atmospheres enabled the deposition of unique PLD CAP films with potential use as thin films for biomedical implants or as regenerative bone graft materials. Keywords: hydroxyapatite, pulsed laser deposition, biomaterials.

Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion

PubMed Central

2012-01-01

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions. PMID:22748164

Target Plate Material Influence on Fullerene-C60 Laser Desorption/Ionization Efficiency.

PubMed

Zeegers, Guido P; Günthardt, Barbara F; Zenobi, Renato

2016-04-01

Systematic laser desorption/ionization (LDI) experiments of fullerene-C60 on a wide range of target plate materials were conducted to gain insight into the initial ion formation in matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. The positive and negative ion signal intensities of precursor, fragment, and cluster ions were monitored, varying both the laser fluence (0-3.53 Jcm(-2)) and the ion extraction delay time (0-950 ns). The resulting species-specific ion signal intensities are an indication for the ionization mechanisms that contribute to LDI and the time frames in which they operate, providing insight in the (MA)LDI primary ionization. An increasing electrical resistivity of the target plate material increases the fullerene-C60 precursor and fragment anion signal intensity. Inconel 625 and Ti90/Al6/V4, both highly electrically resistive, provide the highest anion signal intensities, exceeding the cation signal intensity by a factor ~1.4 for the latter. We present a mechanism based on transient electrical field strength reduction to explain this trend. Fullerene-C60 cluster anion formation is negligible, which could be due to the high extraction potential. Cluster cations, however, are readily formed, although for high laser fluences, the preferred channel is formation of precursor and fragment cations. Ion signal intensity depends greatly on the choice of substrate material, and careful substrate selection could, therefore, allow for more sensitive (MA)LDI measurements. Graphical Abstract ᅟ.

Surface modification and deuterium retention in reduced-activation steels under low-energy deuterium plasma exposure. Part II: steels pre-damaged with 20 MeV W ions and high heat flux

NASA Astrophysics Data System (ADS)

Ogorodnikova, O. V.; Zhou, Z.; Sugiyama, K.; Balden, M.; Pintsuk, G.; Gasparyan, Yu.; Efimov, V.

2017-03-01

The reduced-activation ferritic/martensitic (RAFM) steels including Eurofer (9Cr) and oxide dispersion strengthened (ODS) steels by the addition of Y2O3 particles investigated in Part I were pre-damaged either with 20 MeV W ions at room temperature at IPP (Garching) or with high heat flux at FZJ (Juelich) and subsequently exposed to low energy (~20-200 eV per D) deuterium (D) plasma up to a fluence of 2.9  ×  1025 D m-2 in the temperature range from 290 K to 700 K. The pre-irradiation with 20 MeV W ions at room temperature up to 1 displacement per atom (dpa) has no noticeable influence on the steel surface morphology before and after the D plasma exposure. The pre-irradiation with W ions leads to the same concentration of deuterium in all kinds of investigated steels, regardless of the presence of nanoparticles and Cr content. It was found that (i) both kinds of irradiation with W ions and high heat flux increase the D retention in steels compared to undamaged steels and (ii) the D retention in both pre-damaged and undamaged steels decreases with a formation of surface roughness under the irradiation of steels with deuterium ions with incident energy which exceeds the threshold of sputtering. The increase in the D retention in RAFM steels pre-damaged either with W ions (damage up to ~3 µm) or high heat flux (damage up to ~10 µm) diminishes with increasing the temperature. It is important to mention that the near surface modifications caused by either implantation of high energy ions or a high heat flux load, significantly affect the total D retention at low temperatures or low fluences but have a negligible impact on the total D retention at elevated temperatures and high fluences because, in these cases, the D retention is mainly determined by bulk diffusion.

Fully Solution-Processable Fabrication of Multi-Layered Circuits on a Flexible Substrate Using Laser Processing

PubMed Central

Ji, Seok Young; Choi, Wonsuk; Jeon, Jin-Woo; Chang, Won Seok

2018-01-01

The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of silver (Ag) nanoparticle-based ink is applied to make conductive patterns on a heat-sensitive substrate and insulating layer. The laser beam path and irradiation fluence are controlled to create circuit patterns for flexible electronics. Microvia drilling using femtosecond laser through the polyvinylphenol-film insulating layer by laser ablation, as well as sequential coating of Ag ink and laser sintering, achieves an interlayer interconnection between multi-layer circuits. The dimension of microvia is determined by a sophisticated adjustment of the laser focal position and intensity. Based on these methods, a flexible electronic circuit with chip-size-package light-emitting diodes was successfully fabricated and demonstrated to have functional operations. PMID:29425144

Resistive switching behavior in oxygen ion irradiated TiO2-x films

NASA Astrophysics Data System (ADS)

Barman, A.; Saini, C. P.; Sarkar, P. K.; Bhattacharjee, G.; Bhattacharya, G.; Srivastava, S.; Satpati, B.; Kanjilal, D.; Ghosh, S. K.; Dhar, S.; Kanjilal, A.

2018-02-01

The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2-x layers at an ion fluence of 5  ×  1016 ions cm-2 is reported. A clear transformation from columnar to layered polycrystalline films is revealed by transmission electron microscopy with increasing ion fluence, while the complementary electron energy loss spectroscopy suggests an evolution of oxygen vacancy (OV) in TiO2-x matrix. This is further verified by determining electron density with the help of x-ray reflectivity. Both local and device current-voltage measurements illustrate that the ion-beam induced OVs play a key role in bistable resistive switching mechanism.

Spatial confinement effects on spectroscopic and morphological studies of nanosecond laser-ablated Zirconium

NASA Astrophysics Data System (ADS)

Hayat, Asma; Bashir, Shazia; Rafique, Muhammad Shahid; Ahmad, Riaz; Akram, Mahreen; Mahmood, Khaliq; Zaheer, Ali

2017-12-01

Spatial confinement effects on plasma parameters and surface morphology of laser ablated Zr (Zirconium) are studied by introducing a metallic blocker. Nd:YAG laser at various fluencies ranging from 8 J cm-2 to 32 J cm-2 was employed as an irradiation source. All measurements were performed in the presence of Ar under different pressures. Confinement effects offered by metallic blocker are investigated by placing the blocker at different distances of 6 mm, 8 mm and 10 mm from the target surface. It is revealed from LIBS analysis that both plasma parameters i.e. excitation temperature and electron number density increase with increasing laser fluence due to enhancement in energy deposition. It is also observed that spatial confinement offered by metallic blocker is responsible for the enhancement of both electron temperature and electron number density of Zr plasma. This is true for all laser fluences and pressures of Ar. Maximum values of electron temperature and electron number density without blocker are 12,600 K and 14 × 1017 cm-3 respectively whereas, these values are enhanced to 15,000 K and 21 × 1017 cm-3 in the presence of blocker. The physical mechanisms responsible for the enhancement of Zr plasma parameters are plasma compression, confinement and pronounced collisional excitations due to reflection of shock waves. Scanning Electron Microscope (SEM) analysis was performed to explore the surface morphology of laser ablated Zr. It reveals the formation of cones, cavities and ripples. These features become more distinct and well defined in the presence of blocker due to plasma confinement. The optimum combination of blocker distance, fluence and Ar pressure can identify the suitable conditions for defining the role of plasma parameters for surface structuring.

Dielectric strength, swelling and weight loss of the ITER Toroidal Field Model Coil insulation after low temperature reactor irradiation

NASA Astrophysics Data System (ADS)

Humer, K.; Weber, H. W.; Hastik, R.; Hauser, H.; Gerstenberg, H.

2000-04-01

The insulation system for the Toroidal Field Model Coil of ITER is a fiber reinforced plastic (FRP) laminate, which consists of a combined Kapton/R-glass-fiber reinforcement tape, vacuum-impregnated with an epoxy DGEBA system. Pure disk shaped laminates, FRP/stainless-steel sandwiches, and conductor insulation prototypes were irradiated at 5 K in a fission reactor up to a fast neutron fluence of 10 22 m -2 ( E>0.1 MeV) to investigate the radiation induced degradation of the dielectric strength of the insulation system. After warm-up to room temperature, swelling, weight loss, and the breakdown strength were measured at 77 K. The sandwich swells by 4% at a fluence of 5×10 21 m-2 and by 9% at 1×10 22 m-2. The weight loss of the FRP is 2% at 1×10 22 m-2. The dielectric strength remained unchanged over the whole dose range.

Periodic annealing of radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

1980-01-01

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Atypical self-activation of Ga dopant for Ge nanowire devices.

PubMed

Zeiner, Clemens; Lugstein, Alois; Burchhart, Thomas; Pongratz, Peter; Connell, Justin G; Lauhon, Lincoln J; Bertagnolli, Emmerich

2011-08-10

In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

NASA Astrophysics Data System (ADS)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Phototropin 1 and dim-blue light modulate the red light de-etiolation response

PubMed Central

Wang, Yihai; M Folta, Kevin

2014-01-01

Light signals regulate seedling morphological changes during de-etiolation through the coordinated actions of multiple light-sensing pathways. Previously we have shown that red-light-induced hypocotyl growth inhibition can be reversed by addition of dim blue light through the action of phototropin 1 (phot1). Here we further examine the fluence-rate relationships of this blue light effect in short-term (hours) and long-term (days) hypocotyl growth assays. The red stem-growth inhibition and blue promotion is a low-fluence rate response, and blue light delays or attenuates both the red light and far-red light responses. These de-etiolation responses include blue light reversal of red or far-red induced apical hook opening. This response also requires phot1. Cryptochromes (cry1 and cry2) are activated by higher blue light fluence-rates and override phot1's influence on hypocotyl growth promotion. Exogenous application of auxin transport inhibitor naphthylphthalamic acid abolished the blue light stem growth promotion in both hypocotyl growth and hook opening. Results from the genetic tests of this blue light effect in auxin transporter mutants, as well as phytochrome kinase substrate mutants indicated that aux1 may play a role in blue light reversal of red light response. Together, the phot1-mediated adjustment of phytochrome-regulated photomorphogenic events is most robust in dim blue light conditions and is likely modulated by auxin transport through its transporters. PMID:25482790

Radiolysis of astrophysical ice analogs by energetic ions: the effect of projectile mass and ice temperature.

PubMed

Pilling, Sergio; Duarte, Eduardo Seperuelo; Domaracka, Alicja; Rothard, Hermann; Boduch, Philippe; da Silveira, Enio F

2011-09-21

An experimental study of the interaction of highly charged, energetic ions (52 MeV (58)Ni(13+) and 15.7 MeV (16)O(5+)) with mixed H(2)O : C(18)O(2) astrophysical ice analogs at two different temperatures is presented. This analysis aims to simulate the chemical and the physicochemical interactions induced by cosmic rays inside dense, cold astrophysical environments, such as molecular clouds or protostellar clouds as well at the surface of outer solar system bodies. The measurements were performed at the heavy ion accelerator GANIL (Grand Accelerateur National d'Ions Lourds) in Caen, France. The gas samples were deposited onto a CsI substrate at 13 K and 80 K. In situ analysis was performed by a Fourier transform infrared (FTIR) spectrometer at different fluences. Radiolysis yields of the produced species were quantified. The dissociation cross section at 13 K of both H(2)O and CO(2) is about 3-4 times smaller when O ions are employed. The ice temperature seems to affect differently each species when the same projectile was employed. The formation cross section at 13 K of molecules such as C(18)O, CO (with oxygen from water), and H(2)O(2) increases when Ni ions are employed. The formation of organic compounds seems to be enhanced by the oxygen projectiles and at lower temperatures. In addition, because the organic production at 13 K is at least 4 times higher than the value at 80 K, we also expect that interstellar ices are more organic-rich than the surfaces of outer solar system bodies.

Melting in Superheated Silicon Films Under Pulsed-Laser Irradiation

NASA Astrophysics Data System (ADS)

Wang, Jin Jimmy

This thesis examines melting in superheated silicon films in contact with SiO2 under pulsed laser irradiation. An excimer-laser pulse was employed to induce heating of the film by irradiating the film through the transparent fused-quartz substrate such that most of the beam energy was deposited near the bottom Si-SiO2 interface. Melting dynamics were probed via in situ transient reflectance measurements. The temperature profile was estimated computationally by incorporating temperature- and phase-dependent physical parameters and the time-dependent intensity profile of the incident excimer-laser beam obtained from the experiments. The results indicate that a significant degree of superheating occurred in the subsurface region of the film. Surface-initiated melting was observed in spite of the internal heating scheme, which resulted in the film being substantially hotter at and near the bottom Si-SiO2 interface. By considering that the surface melts at the equilibrium melting point, the solid-phase-only heat-flow analysis estimates that the bottom Si-SiO2 interface can be superheated by at least 220 K during excimer-laser irradiation. It was found that at higher laser fluences (i.e., at higher temperatures), melting can be triggered internally. At heating rates of 1010 K/s, melting was observed to initiate at or near the (100)-oriented Si-SiO2 interface at temperatures estimated to be over 300 K above the equilibrium melting point. Based on theoretical considerations, it was deduced that melting in the superheated solid initiated via a nucleation and growth process. Nucleation rates were estimated from the experimental data using Johnson-Mehl-Avrami-Kolmogorov (JMAK) analysis. Interpretation of the results using classical nucleation theory suggests that nucleation of the liquid phase occurred via the heterogeneous mechanism along the Si-SiO2 interface.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE PAGES

Wang, H.; Leonard, K. J.

2017-07-25

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Leonard, K. J.

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Mechanisms of radiation embrittlement of VVER-1000 RPV steel at irradiation temperatures of (50-400)°C

NASA Astrophysics Data System (ADS)

Kuleshova, E. A.; Gurovich, B. A.; Bukina, Z. V.; Frolov, A. S.; Maltsev, D. A.; Krikun, E. V.; Zhurko, D. A.; Zhuchkov, G. M.

2017-07-01

This work summarizes and analyzes our recent research results on the effect of irradiation temperature within the range of (50-400)°C on microstructure and properties of 15Kh2NMFAA class 1 steel (VVER-1000 reactor pressure vessel (RPV) base metal). The paper considers the influence of accelerated irradiation with different temperature up to different fluences on the carbide and irradiation-induced phases, radiation defects, yield strength changes and critical brittleness temperature shift (ΔTK) as well as on changes of the fraction of brittle intergranular fracture and segregation processes in the steel. Low temperature irradiation resulted solely in formation of radiation defects - dislocation loops of high number density, the latter increased with increase in irradiation temperature while their size decreased. In this regard high embrittlement rate observed at low temperature irradiation is only due to the hardening mechanism of radiation embrittlement. Accelerated irradiation at VVER-1000 RPV operating temperature (∼300 °C) caused formation of radiation-induced precipitates and dislocation loops, as well as some increase in phosphorus grain boundary segregation. The observed ΔTK shift being within the regulatory curve for VVER-1000 RPV base metal is due to both hardening and non-hardening mechanisms of radiation embrittlement. Irradiation at elevated temperature caused more intense phosphorus grain boundary segregation, but no formation of radiation-induced precipitates or dislocation loops in contrast to irradiation at 300 °C. Carbide transformations observed only after irradiation at 400 °C caused increase in yield strength and, along with a contribution of the non-hardening mechanism, resulted in the lowest ΔTK shift in the studied range of irradiation temperature and fluence.

Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

NASA Astrophysics Data System (ADS)

Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

2018-02-01

The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

High-fluence Ga-implanted silicon—The effect of annealing and cover layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiedler, J., E-mail: jan.fiedler@hzdr.de; Heera, V.; Hübner, R.

2014-07-14

The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case,more » Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.« less

JOYO-1 Irradiation Test Campaign Technical Close-out, For Information

DOE Office of Scientific and Technical Information (OSTI.GOV)

G. Borges

2006-01-31

The JOYO-1 irradiation testing was designed to screen the irradiation performance of candidate cladding, structural and reflector materials in support of space reactor development. The JOYO-1 designation refers to the first of four planned irradiation tests in the JOYO reactor. Limited irradiated material performance data for the candidate materials exists for the expected Prometheus-1 duration, fluences and temperatures. Materials of interest include fuel element cladding and core materials (refractory metal alloys and silicon carbide (Sic)), vessel and plant structural materials (refractory metal alloys and nickel-base superalloys), and control and reflector materials (BeO). Key issues to be evaluated were long termmore » microstructure and material property stability. The JOYO-1 test campaign was initiated to irradiate a matrix of specimens at prototypical temperatures and fluences anticipated for the Prometheus-1 reactor [Reference (1)]. Enclosures 1 through 9 describe the specimen and temperature monitors/dosimetry fabrication efforts, capsule design, disposition of structural material irradiation rigs, and plans for post-irradiation examination. These enclosures provide a detailed overview of Naval Reactors Prime Contractor Team (NRPCT) progress in specific areas; however, efforts were in various states of completion at the termination of NRPCT involvement with and restructuring of Project Prometheus.« less

Materials-of-Construction Radiation Sensitivity for a Fission Surface Power Convertor

NASA Technical Reports Server (NTRS)

Bowman, Cheryl L.; Geng, Steven M.; Niedra, Janis M.; Sayir, Ali; Shin, Eugene E.; Sutter, James K.; Thieme, Lanny G.

2007-01-01

A fission reactor combined with a free-piston Stirling convertor is one of many credible approaches for producing electrical power in space applications. This study assumes dual-opposed free-piston Stirling engines/linear alternators that will operate nominally at 825 K hot-end and 425 K cold-end temperatures. The baseline design options, temperature profiles, and materials of construction discussed here are based on historical designs as well as modern convertors operating at lower power levels. This notional design indicates convertors primarily made of metallic components that experience minimal change in mechanical properties for fast neutron fluences less than 10(sup 20) neutrons per square centimeter. However, these radiation effects can impact the magnetic and electrical properties of metals at much lower fluences than are crucial for mechanical property integrity. Moreover, a variety of polymeric materials are also used in common free-piston Stirling designs for bonding, seals, lubrication, insulation and others. Polymers can be affected adversely by radiation doses as low as 10(sup 5) - 10(sup 10) rad. Additionally, the absorbing dose rate, radiation hardness, and the resulting effect (either hardening or softening) varies depending on the nature of the particular polymer. The classes of polymers currently used in convertor fabrication are discussed along possible substitution options. Thus, the materials of construction of prototypic Stirling convertor engines have been considered and the component materials susceptible to damage at the lowest neutron fluences have been identified.

Experimental study of EUV mirror radiation damage resistance under long-term free-electron laser exposures below the single-shot damage threshold

PubMed Central

Makhotkin, Igor A.; Sobierajski, Ryszard; Chalupský, Jaromir; Tiedtke, Kai; de Vries, Gosse; Störmer, Michael; Scholze, Frank; Siewert, Frank; van de Kruijs, Robbert W. E.; Milov, Igor; Louis, Eric; Jacyna, Iwanna; Jurek, Marek; Klinger, Dorota; Syryanyy, Yevgen; Juha, Libor; Hájková, Věra; Saksl, Karel; Faatz, Bart; Keitel, Barbara; Plönjes, Elke; Toleikis, Sven; Loch, Rolf; Hermann, Martin; Strobel, Sebastian; Nienhuys, Han-Kwang; Gwalt, Grzegorz; Mey, Tobias; Enkisch, Hartmut

2018-01-01

The durability of grazing- and normal-incidence optical coatings has been experimentally assessed under free-electron laser irradiation at various numbers of pulses up to 16 million shots and various fluence levels below 10% of the single-shot damage threshold. The experiment was performed at FLASH, the Free-electron LASer in Hamburg, using 13.5 nm extreme UV (EUV) radiation with 100 fs pulse duration. Polycrystalline ruthenium and amorphous carbon 50 nm thin films on silicon substrates were tested at total external reflection angles of 20° and 10° grazing incidence, respectively. Mo/Si periodical multilayer structures were tested in the Bragg reflection condition at 16° off-normal angle of incidence. The exposed areas were analysed post-mortem using differential contrast visible light microscopy, EUV reflectivity mapping and scanning X-ray photoelectron spectroscopy. The analysis revealed that Ru and Mo/Si coatings exposed to the highest dose and fluence level show a few per cent drop in their EUV reflectivity, which is explained by EUV-induced oxidation of the surface. PMID:29271755

Experimental study of EUV mirror radiation damage resistance under long-term free-electron laser exposures below the single-shot damage threshold.

PubMed

Makhotkin, Igor A; Sobierajski, Ryszard; Chalupský, Jaromir; Tiedtke, Kai; de Vries, Gosse; Störmer, Michael; Scholze, Frank; Siewert, Frank; van de Kruijs, Robbert W E; Milov, Igor; Louis, Eric; Jacyna, Iwanna; Jurek, Marek; Klinger, Dorota; Nittler, Laurent; Syryanyy, Yevgen; Juha, Libor; Hájková, Věra; Vozda, Vojtěch; Burian, Tomáš; Saksl, Karel; Faatz, Bart; Keitel, Barbara; Plönjes, Elke; Schreiber, Siegfried; Toleikis, Sven; Loch, Rolf; Hermann, Martin; Strobel, Sebastian; Nienhuys, Han Kwang; Gwalt, Grzegorz; Mey, Tobias; Enkisch, Hartmut

2018-01-01

The durability of grazing- and normal-incidence optical coatings has been experimentally assessed under free-electron laser irradiation at various numbers of pulses up to 16 million shots and various fluence levels below 10% of the single-shot damage threshold. The experiment was performed at FLASH, the Free-electron LASer in Hamburg, using 13.5 nm extreme UV (EUV) radiation with 100 fs pulse duration. Polycrystalline ruthenium and amorphous carbon 50 nm thin films on silicon substrates were tested at total external reflection angles of 20° and 10° grazing incidence, respectively. Mo/Si periodical multilayer structures were tested in the Bragg reflection condition at 16° off-normal angle of incidence. The exposed areas were analysed post-mortem using differential contrast visible light microscopy, EUV reflectivity mapping and scanning X-ray photoelectron spectroscopy. The analysis revealed that Ru and Mo/Si coatings exposed to the highest dose and fluence level show a few per cent drop in their EUV reflectivity, which is explained by EUV-induced oxidation of the surface.

Charged Particle Detection: Potential of Love Wave Acoustic Devices

NASA Astrophysics Data System (ADS)

Pedrick, Michael; Tittmann, Bernhard

2006-03-01

An investigation of the dependence of film density on group and phase velocities in a Love Wave Device shows potential for acoustic-based charged particle detection (CPD). Exposure of an ion sensitive photoresist to charged particles causes localized changes in density through either scission or cross-linking. A theoretical model was developed to study ion fluence effects on Love Wave sensitivity based on: ion energy, effective density changes, layer thickness and mode selection. The model is based on a Poly(Methyl Methacralate) (PMMA) film deposited on a Quartz substrate. The effect of Helium ion fluence on the properties of PMMA has previously been studied. These guidelines were used as an initial basis for the prediction of helium ion detection in a PMMA layer. Procedures for experimental characterization of ion effects on the material properties of PMMA are reviewed. Techniques for experimental validation of the predicted velocity shifts are discussed. A Love Wave Device for CPD could potentially provide a cost-effective alternative to semiconductor or photo-based counterparts. The potential for monitoring ion implantation effects on material properties is also discussed.

Laser processing of sapphire with picosecond and sub-picosecond pulses

NASA Astrophysics Data System (ADS)

Ashkenasi, D.; Rosenfeld, A.; Varel, H.; Wähmer, M.; Campbell, E. E. B.

1997-11-01

Laser processing of sapphire using a Ti:sapphire laser at 790 and 395 nm and pulse widths varying between 0.2 and 5 ps is reported. A clear improvement in quality is demonstrated for multi-shot processing with sub-ps laser pulses. For fluences between 3 and 12 J/cm 2 two ablation phases were observed, in agreement with previous work from Tam et al. using 30 ps, 266 nm laser pulses [A.C. Tam, J.L. Brand, D.C. Cheng, W. Zapka, Appl. Phys. Lett. 55 (20) (1994) 2045]. During the `gentle ablation' phase periodic wavelike structures, i.e. ripples, were observed on the Al 2O 3 surface, perpendicular to the laser polarisation and with a spacing almost equalling the laser wavelength, indicating metallic-like behaviour. The ripple modulation depth was in the order of a few tens of nm. For fluences between 1 and 2.5 J/cm 2, below the single-shot surface damage threshold and at a pulse width above 200 fs, microstructures could be produced at the rear side of a 1 mm thick sapphire substrate without affecting the front surface.

Structural characterization of nanoscale intermetallic precipitates in highly neutron irradiated reactor pressure vessel steels

DOE PAGES

Sprouster, D. J.; Sinsheimer, J.; Dooryhee, E.; ...

2015-10-21

Here, massive, thick-walled pressure vessels are permanent nuclear reactor structures that are exposed to a damaging flux of neutrons from the adjacent core. The neutrons cause embrittlement of the vessel steel that increases with dose (fluence or service time), as manifested by an increasing temperature transition from ductile-to-brittle fracture. Moreover, extending reactor life requires demonstrating that large safety margins against brittle fracture are maintained at the higher neutron fluence associated with 60 to 80 years of service. Here synchrotron-based x-ray diffraction and small angle x-ray scattering measurements are used to characterize a new class of highly embrittling nm-scale Mn-Ni-Si precipitatesmore » that develop in the irradiated steels at high fluence. Furthermore, these precipitates can lead to severe embrittlement that is not accounted for in current regulatory models. Application of the complementarity techniques has, for the very first time, successfully characterized the crystal structures of the nanoprecipitates, while also yielding self-consistent compositions, volume fractions and size distributions.« less

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in; Kanjilal, A.

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used inmore » our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.« less

Formation of polymer nanoparticles by UV pulsed laser ablation of poly (bisphenol A carbonate) in liquid environment

NASA Astrophysics Data System (ADS)

Martínez-Tong, Daniel E.; Sanz, Mikel; Ezquerra, Tiberio A.; Nogales, Aurora; Marco, José F.; Castillejo, Marta; Rebollar, Esther

2017-10-01

Suspensions of poly(bisphenol A carbonate) (PBAC) nanoparticles of varying size and shape have been produced by ablation of a PBAC target in liquid media with the fourth harmonic of a Q-switched Nd:YAG laser (wavelength 266 nm, full width at half maximum 4 ns, repetition rate 10 Hz). The polymer target was placed at the bottom of a rotating glass vessel filled with around a 10 mm column of liquid. Laser ablation in water leads to spherical nanoparticles with diameters of several tens of nanometers for fluences close to 1 J/cm2. Ablation at lower fluences, around 0.1 J/cm2, results in the production of nanoparticles of smaller diameters and also of non-spherical nanoparticles. Additional irradiations at the fluence of 0.1 J/cm2 were performed in several liquid media with different properties, in terms of density, viscosity, thermal conductivity, boiling temperature, isothermal compressibility and polarity. The different size distributions observed were related to the thermal conductivity of the systems, while their viscosity seems to be responsible for the development of nanostructures with different morphologies.

Ultraviolet Laser-induced ignition of RDX single crystal

PubMed Central

Yan, Zhonghua; Zhang, Chuanchao; Liu, Wei; Li, Jinshan; Huang, Ming; Wang, Xuming; Zhou, Guorui; Tan, Bisheng; Yang, Zongwei; Li, Zhijie; Li, Li; Yan, Hongwei; Yuan, Xiaodong; Zu, Xiaotao

2016-01-01

The RDX single crystals are ignited by ultraviolet laser (355 nm, 6.4 ns) pulses. The laser-induced damage morphology consisted of two distinct regions: a core region of layered fracture and a peripheral region of stripped material surrounding the core. As laser fluence increases, the area of the whole crack region increases all the way, while both the area and depth of the core region increase firstly, and then stay stable over the laser fluence of 12 J/cm2. The experimental details indicate the dynamics during laser ignition process. Plasma fireball of high temperature and pressure occurs firstly, followed by the micro-explosions on the (210) surface, and finally shock waves propagate through the materials to further strip materials outside and yield in-depth cracks in larger surrounding region. The plasma fireball evolves from isotropic to anisotropic under higher laser fluence resulting in the damage expansion only in lateral direction while maintaining the fixed depth. The primary insights into the interaction dynamics between laser and energetic materials can help developing the superior laser ignition technique. PMID:26847854

Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32-1.0) single crystals

DOE PAGES

Zhang, Limin; Jiang, Weilin; Dissanayake, Amila C.; ...

2016-06-27

Lattice disorder and compositional changes in InxGa1-xN (x=0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3E13 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x=0.32 and 0.47),more » significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x=0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Growth and structure of fullerene-like CNx thin films produced by pulsed laser ablation of graphite in nitrogen

NASA Astrophysics Data System (ADS)

Voevodin, A. A.; Jones, J. G.; Zabinski, J. S.; Czigany, Zs.; Hultman, L.

2002-11-01

The growth and structure of fullerene-like CNx films produced by laser ablation of graphite in low pressure nitrogen were investigated. Deposition conditions were selected based on investigations of CN and C2 concentration at the condensation surface, vibrational temperature of CN radicals, and kinetic energies of atomic and molecular species. Films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, nanoindentation, and stress analyses. The nitrogen content in CNx films directly depended on the concentration of CN radicals at the condensation surface. Formation of fullerene-like structures required a high vibrational temperature of these radicals, which was maximized at about 4 eV for depositions at 10 mTorr N2 and laser fluences of approx7 J/cm2. The presence of C2 had only a minor effect on film composition and structure. Optimization of plasma characteristics and a substrate temperature of 300 degC helped to produce about 1-mum-thick solid films of CNx (N/C ratioapproximately0.2-0.3) and pure carbon consisting of fullerene-like fragments and packages. In contrast to carbon films, fullerene-like CNx films exhibited a high elastic recovery of about 80% in using a Berkovich tip at 5 mN load and indentation depths up to 150 nm. Their elastic modulus was about 160 GPa measured from the unloading portion of an indentation curve, and about 250 GPa measured with a 40 Hz tip oscillation during nanoindentation tests. The difference was related to time dependent processes of shape restoration of fullerene-like fragments, and an analogy was made to the behavior of elastomer polymers. However, unlike elastomers, CNx film hardness was as high as 30 GPa, which was twice that of fullerene-like carbon films. The unusual combination of high elasticity and hardness of CNx films was explained by crosslinking of fullerene fragments induced by the incorporated nitrogen and stored compressive stress. The study demonstrated laser ablation as a viable technique for the growth of fullerene-like CNx films, which may be used as hard protective coatings resisting brittle fracture at high loads and extensive substrate deformations.

Survival of endospores of Bacillus subtilis on spacecraft surfaces under simulated martian environments: implications for the forward contamination of Mars

NASA Technical Reports Server (NTRS)

Schuerger, Andrew C.; Mancinelli, Rocco L.; Kern, Roger G.; Rothschild, Lynn J.; McKay, Christopher P.

2003-01-01

Experiments were conducted in a Mars simulation chamber (MSC) to characterize the survival of endospores of Bacillus subtilis under high UV irradiation and simulated martian conditions. The MSC was used to create Mars surface environments in which pressure (8.5 mb), temperature (-80, -40, -10, or +23 degrees C), gas composition (Earth-normal N2/O2 mix, pure N2, pure CO2, or a Mars gas mix), and UV-VIS-NIR fluence rates (200-1200 nm) were maintained within tight limits. The Mars gas mix was composed of CO2 (95.3%), N2 (2.7%), Ar (1.7%), O2 (0.2%), and water vapor (0.03%). Experiments were conducted to measure the effects of pressure, gas composition, and temperature alone or in combination with Mars-normal UV-VIS-NIR light environments. Endospores of B. subtilis, were deposited on aluminum coupons as monolayers in which the average density applied to coupons was 2.47 x 10(6) bacteria per sample. Populations of B. subtilis placed on aluminum coupons and subjected to an Earth-normal temperature (23 degrees C), pressure (1013 mb), and gas mix (normal N2/O2 ratio) but illuminated with a Mars-normal UV-VIS-NIR spectrum were reduced by over 99.9% after 30 sec exposure to Mars-normal UV fluence rates. However, it required at least 15 min of Mars-normal UV exposure to reduce bacterial populations on aluminum coupons to non-recoverable levels. These results were duplicated when bacteria were exposed to Mars-normal environments of temperature (-10 degrees C), pressure (8.5 mb), gas composition (pure CO2), and UV fluence rates. In other experiments, results indicated that the gas composition of the atmosphere and the temperature of the bacterial monolayers at the time of Mars UV exposure had no effects on the survival of bacterial endospores. But Mars-normal pressures (8.5 mb) were found to reduce survival by approximately 20-35% compared to Earth-normal pressures (1013 mb). The primary implications of these results are (a) that greater than 99.9% of bacterial populations on sun-exposed surfaces of spacecraft are likely to be inactivated within a few tens of seconds to a few minutes on the surface of Mars, and (b) that within a single Mars day under clear-sky conditions bacterial populations on sun-exposed surfaces of spacecraft will be sterilized. Furthermore, these results suggest that the high UV fluence rates on the martian surface can be an important resource in minimizing the forward contamination of Mars. c2003 Elsevier Inc. All rights reserved.

Neutron-capture Cl-36, Ca-41, Ar-36, and Sm-150 in large chondrites: Evidence for high fluences of thermalized neutrons

NASA Technical Reports Server (NTRS)

Bogard, D. D.; Nyquist, L. E.; Bansal, B. M.; Garrison, D. H.; Wiesmann, H.; Herzog, G. F.; Albrecht, A. A.; Vogt, S.; Klein, J.

1995-01-01

We have measured significant concentrations of Cl-36, Ca-41, Ar-36 from decay of Cl-36, and Sm-150 produced from the capture of thermalized neutrons in the large Chico L6 chondrite. Activities of Cl-36 and Ca-41, corrected for a high-energy spallogenic component and a terrestrial age of approximately 50 ka, give average neutron-capture production rates of 208 atoms/min/g-Cl and 1525 atoms/min/kg-Ca, which correspond to thermal neutron (n) fluxes of 6.2 n/sq cm/s and 4.3 n/sq cm/s, respectively. If sustained for the approximately 65 Ma single-stage, cosmic ray exposure age of Chico, these values correspond to thermal neutron fluences of approximately 1.3 x 10(exp 16) and 0.8 x 10(exp 16) n/sq cm for Cl-36 and Ca-41, respectively. Stepwise temperature extraction of Ar in Chico impact melt shows Ar-36/Ar-38 ratios as large as approximately 9. The correlation of high Ar-36/Ar-38 with high Cl/Ca phases in neutron-irradiated Chico indicates that the excess Ar-36 above that expected from spallation is due to decay of neutron-produced Cl-36. Excess Ar-36 in Chico requires a thermal neutron fluence of 0.9-1.7 x 10(exp 16) n/sq cm. Decreases in Sm-149/Sm-152 due to neutron-capture by Sm-149 correlate with increases in Sm-150/Sm-152 for three samples of Chico, and one of the Torino H-chondrite. The 0.08% decrease in Sm-149 shown by Chico corresponds to a neutron fluence of 1.23 x 10(exp 16) n/sq cm. This fluence derived from Sm considers capture of epithermal neutrons and effects of chemical composition on the neutron energy distribution. Excess Ar-36 identified in the Arapahoe, Bruderheim, and Torino chondrites and the Shallowater aubrite suggest exposure to neutron fluences of approximately 0.2-0.2 x 10(exp 16) n/sq cm. Depletion of Sm-149 in Torino and the LEW86010 angrite suggest neutron fluences of 0.8 x 10(exp 16) n/sq cm and 0.25 x 10(exp 16) n/sq cm, respectively. Neutron fluences of approximately 10(exp 16) n/sq cm in Chico are almost as large as those previously observed for some lunar soils. Consideration of exposure ages suggests that the neutron flux in Chico may have been greater than that in many lunar soils.

Substrate-dependent temperature sensitivity of soil organic matter decomposition

NASA Astrophysics Data System (ADS)

Myachina, Olga; Blagodatskaya, Evgenia

2015-04-01

Activity of extracellular enzymes responsible for decomposition of organics is substrate dependent. Quantity of the substrate is the main limiting factor for enzymatic or microbial heterotrophic activity in soils. Different mechanisms of enzymes response to temperature suggested for low and high substrate availability were never proved for real soil conditions. We compared the temperature responses of enzymes-catalyzed reactions in soils. Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation.

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1981-01-01

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

Ablation of porcine ligamentum flavum with Ho:YAG, q-switched Ho:YAG, and quadrupled Nd:YAG lasers.

PubMed

Johnson, Matt R; Codd, Patrick J; Hill, Westin M; Boettcher, Tara

2015-12-01

Ligamentum flavum (LF) is a tough, rubbery connective tissue providing a portion of the ligamentous stability to the spinal column, and in its hypertrophied state forms a significant compressive pathology in degenerative spinal stenosis. The interaction of lasers and this biological tissue have not been thoroughly studied. Technological advances improving endoscopic surgical access to the spinal canal makes selective removal of LF using small, flexible tools such as laser-coupled fiber optics increasingly attractive for treatment of debilitating spinal stenosis. Testing was performed to assess the effect of Ho:YAG, Q-switched Ho:YAG, and frequency quadrupled Nd:YAG lasers on samples of porcine LF. The objective was to evaluate the suitability of these lasers for surgical removal of LF. LF was resected from porcine spine within 2 hours of sacrifice and stored in saline until immediately prior to laser irradiation, which occurred within an additional 2 hours. The optical absorbance of a sample was measured over the spectral band from 190 to 2,360 nm both before and after dehydration. For the experiments using the Ho:YAG (λ = 2,080 nm, tp  = 140 µs, FWHM) and Q-Switched Ho:YAG (λ = 2,080 nm, tp  = 260 ns, FWHM) lasers, energy was delivered to the LF through a laser-fiber optic with 600 µm core and NA = 0.39. For the experiment using the frequency quadrupled Nd:YAG laser (λ = 266 nm, tp  = 5 ns FWHM), rather than applying the laser energy through a laser-fiber, the energy was focused through an aperture and lens directly onto the LF. Five experiments were conducted to evaluate the effect of the given lasers on LF. First, using the Ho:YAG laser, the single-pulse laser-hole depth versus laser fluence was measured with the laser-fiber in direct contact with the LF (1 g force) and with a standoff distance of 1 mm between the laser-fiber face and the LF. Second, with the LF remaining in situ and the spine bisected along the coronal plane, the surface temperature of the LF was measured with an IR camera during irradiation with the Ho:YAG laser, with and without constant saline flush. Third, the mass loss was measured over the course of 450 Ho:YAG pulses. Fourth, hole depth and temperature were measured over 30 pulses of fixed fluence from the Ho:YAG and Q-Switched Ho:YAG lasers. Fifth, the ablation rate and surface temperature were measured as a function of fluence from the Nd:YAG laser. Several LF staining and hole-depth measurement techniques were also explored. Aside from the expected absorbance peaks corresponding to the water in the LF, the most significant peaks in absorbance were located in the spectral band from 190 to 290 nm and persisted after the tissue was dehydrated. In the first experiment, using the Ho:YAG laser and with the laser-fiber in direct contact with the LF, the lowest single-pulse fluence for which LF was visibly removed was 35 J/cm(2) . Testing was conducted at 6 fluences between 35 and 354 J/cm(2) . Over this range the single-pulse hole depth was shown to be near linear (R(2)  = 0.9374, M = 1.6), ranging from 40 to 639 µm (N = 3). For the case where the laser-fiber face was displaced 1 mm from the LF surface, the lowest single-pulse fluence for which tissue was visibly removed was 72 J/cm(2) . Testing was conducted at 4 energy densities between 72 and 180 J/cm(2) . Over this range the single-pulse hole depth was shown to be near linear (R(2)  = 0.8951, M = 1.4), ranging from 31 to 220 µm (N = 3). In the second experiment, with LF in situ, constant flushing with room temperature saline was shown to drastically reduce surface temperature during exposure to Ho:YAG at 5 Hz with the laser-fiber in direct contact with the LF. Without saline, over 1 minute of treatment with a per-pulse fluence of 141 mJ/cm(2) , the average maximum surface temperature measured 110°C. With 10 cc's of saline flushed over 1 minute and a per-pulse laser fluence of 212 mJ/cm(2) , the average maximum surface temperature was 35°C. In the third experiment, mass loss was shown to be linear over 450 pulses of 600 mJ from the Ho:YAG laser (212 J/cm(2) , direct contact, N = 4; 108 J/cm(2) , 1 mm standoff, N = 4). With the laser-fiber in direct contact, an average of 53 mg was removed (R(2)  = 0.996, M = 0.117) and with 1 mm laser-fiber standoff, an average of 44 mg was removed (R(2)  = 0.9988, M = 0.097). In the fourth experiment, 30 pulses of the Ho:YAG and Q-Switched Ho:YAG lasers at 1 mm standoff, and 5 Hz produced similar hole depths for the tested fluences of 9 J/cm(2) (151 and 154 µm, respectively) and 18 J/cm(2) (470 and 442 µm, respectively), though the Ho:YAG laser produced significantly more carbonization around the rim of the laser-hole. The increased carbonization was corroborated by higher measured LF temperature. In all tests with the Ho:YAG and Q-Switched Ho:YAG, an audible photo-acoustic affect coincided with the laser pulse. In the fifth experiment, with the frequency quadrupled Nd:YAG laser at 15 Hz for 450 pulses, ablation depth per pulse was shown to be linear for the fluence range of 0.18 - 0.73 J/cm(2) (R(2)  = 0.989, M = 2.4). There was no noticeable photo-acoustic effect nor charring around the rim of the laser-hole. The Ho:YAG, Q-Switched Ho:YAG, and frequency quadrupled Nd:YAG lasers were shown to remove ligamentum flavum (LF). A single pulse of the Ho:YAG laser was shown to cause tearing of the tissue and a large zone of necrosis surrounding the laser-hole. Multiple pulses of the Ho:YAG and Q-Switched Ho:YAG lasers caused charring around the rim of the laser-hole, though the extent of charring was more extensive with the Ho:YAG laser. Charring caused by the Ho:YAG laser was shown to be mitigated by continuously flushing the affected LF with saline during irradiation. The Nd:YAG laser was shown to ablate LF with no gross visible indication of thermal damage to surrounding LF. © 2015 Wiley Periodicals, Inc.

Effect of Substrate and Process Parameters on the Gas-Substrate Convective Heat Transfer Coefficient During Cold Spraying

NASA Astrophysics Data System (ADS)

Mahdavi, Amirhossein; McDonald, André

2018-02-01

The final quality of cold-sprayed coatings can be significantly influenced by gas-substrate heat exchange, due to the dependence of the deposition efficiency of the particles on the substrate temperature distribution. In this study, the effect of the air temperature and pressure, as process parameters, and surface roughness and thickness, as substrate parameters, on the convective heat transfer coefficient of the impinging air jet was investigated. A low-pressure cold spraying unit was used to generate a compressed air jet that impinged on a flat substrate. A comprehensive mathematical model was developed and coupled with experimental data to estimate the heat transfer coefficient and the surface temperature of the substrate. The effect of the air total temperature and pressure on the heat transfer coefficient was studied. It was found that increasing the total pressure would increase the Nusselt number of the impinging air jet, while total temperature of the air jet had negligible effect on the Nusslet number. It was further found that increasing the roughness of the substrate enhanced the heat exchange between the impinging air jet and the substrate. As a result, higher surface temperatures on the rough substrate were measured. The study of the effect of the substrate thickness on the heat transfer coefficient showed that the Nusselt number that was predicted by the model was independent of the thickness of the substrate. The surface temperature profile, however, decreased in increasing radial distances from the stagnation point of the impinging jet as the thickness of the substrate increased. The results of the current study were aimed to inform on the influence and effect of substrate and process parameters on the gas-substrate heat exchange and the surface temperature of the substrate on the final quality of cold-sprayed coatings.

Irradiation effect of the insulating materials for fusion superconducting magnets at cryogenic temperature

NASA Astrophysics Data System (ADS)

Kobayashi, Koji; Akiyama, Yoko; Nishijima, Shigehiro

2017-09-01

In ITER, superconducting magnets should be used in such severe environment as high fluence of fast neutron, cryogenic temperature and large electromagnetic forces. Insulating material is one of the most sensitive component to radiation. So radiation resistance on mechanical properties at cryogenic temperature are required for insulating material. The purpose of this study is to evaluate irradiation effect of insulating material at cryogenic temperature by gamma-ray irradiation. Firstly, glass fiber reinforced plastic (GFRP) and hybrid composite were prepared. After irradiation at room temperature (RT) or liquid nitrogen temperature (LNT, 77 K), interlaminar shear strength (ILSS) and glass-transition temperature (Tg) measurement were conducted. It was shown that insulating materials irradiated at room temperature were much degraded than those at cryogenic temperature.

Microstructural response of InGaN to swift heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a GaN/Al 2O 3 substrate was irradiated with 290 MeV 238U 32+ ions to a fluence of 1.2 x 12 cm -2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18Ga 0.82N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18Ga 0.82N is ~9 nm, as determined by HIM examination. Combinationmore » of the HIM and RBS/C data suggests that the material in the track is likely to be highly disordered or fully amorphized, in contrast to a crystalline structure within the ion track in GaN. Lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed after irradiation.« less

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

NASA Astrophysics Data System (ADS)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Microstructural response of InGaN to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.; Ai, W. S.; Peng, J. X.; Wang, T. S.; Zhang, C. H.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ∼275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 × 1012 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

Compaction in optical fibres and fibre Bragg gratings under nuclear reactor high neutron and gamma fluence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Remy, L.; Cheymol, G.; Gusarov, A.

2015-07-01

In the framework of the development by CEA and SCK.CEN of a Fabry Perot Sensor (FPS) able to measure dimensional changes in Material Testing Reactor (MTR), the first goal of the SAKE 1 (Smirnof extention - Additional Key-tests on Elongation of glass fibres) irradiation was to measure the linear compaction of single mode fibres under high fast neutron fluence. Indeed, the compaction of the fibre which forms one side of the Fabry Perot cavity, may in particular cause a noticeable measurement error. An accurate quantification of this effect is then required to predict the radiation-induced drift and optimize the sensormore » design. To achieve this, an innovative approach was used. Approximately seventy uncoated fibre tips (length: 30 to 50 mm) have been prepared from several different fibre samples and were installed in the SCK.CEN BR2 reactor (Mol Belgium). After 22 days of irradiation a total fast (E > 1 MeV) fluence of 3 to 5x10{sup 19} n{sub fast}/cm{sup 2}, depending on the sample location, was accumulated. The temperature during irradiation was 291 deg. C, which is not far from the condition of the intended FPS use. A precise measurement of each fibre tip length was made before the irradiation and compared to the post irradiation measurement highlighting a decrease of the fibres' length corresponding to about 0.25% of linear compaction. The amplitude of the changes is independent of the capsule, which could mean that the compaction effect saturates even at the lowest considered fluence. In the prospect of performing distributed temperature measurement in MTR, several fibre Bragg gratings written using a femtosecond laser have been also irradiated. All the gratings were written in radiation hardened fibres, and underwent an additional treatment with a procedure enhancing their resistance to ionizing radiations. A special mounting made it possible to test the reflection and the transmission of the gratings on fibre samples cut down to 30 to 50 mm. The comparison of measurements made before and after the irradiation, at the same temperature, allowed us to measure the loss in reflectivity as well as the Bragg wavelength drift. The results are quite promising for some of the investigated gratings. (authors)« less

Study on structural recovery of graphite irradiated with swift heavy ions at high temperature

NASA Astrophysics Data System (ADS)

Pellemoine, F.; Avilov, M.; Bender, M.; Ewing, R. C.; Fernandes, S.; Lang, M.; Li, W. X.; Mittig, W.; Schein, M.; Severin, D.; Tomut, M.; Trautmann, C.; Zhang, F. X.

2015-12-01

Thin graphite foils bombarded with an intense high-energy (8.6 MeV/u) gold beam reaching fluences up to 1 × 1015 ions/cm2 lead to swelling and electrical resistivity changes. As shown earlier, these effects are diminished with increasing irradiation temperature. The work reported here extends the investigation of beam induced changes of these samples by structural analysis using synchrotron X-ray diffraction and transmission electron microscope. A nearly complete recovery from swelling at irradiation temperatures above about 1500 °C is identified.

Inorganic-organic thin implant coatings deposited by lasers.

PubMed

Sima, Felix; Davidson, Patricia M; Dentzer, Joseph; Gadiou, Roger; Pauthe, Emmanuel; Gallet, Olivier; Mihailescu, Ion N; Anselme, Karine

2015-01-14

The lifetime of bone implants inside the human body is directly related to their osseointegration. Ideally, future materials should be inspired by human tissues and provide the material structure-function relationship from which synthetic advanced biomimetic materials capable of replacing, repairing, or regenerating human tissues can be produced. This work describes the development of biomimetic thin coatings on titanium implants to improve implant osseointegration. The assembly of an inorganic-organic biomimetic structure by UV laser pulses is reported. The structure consists of a hydroxyapatite (HA) film grown onto a titanium substrate by pulsed-laser deposition (PLD) and activated by a top fibronectin (FN) coating deposited by matrix-assisted pulsed laser evaporation (MAPLE). A pulsed KrF* laser source (λ = 248 nm, τ = 25 ns) was employed at fluences of 7 and 0.7J/cm(2) for HA and FN transfer, respectively. Films approximately 1500 and 450 nm thick were obtained for HA and FN, respectively. A new cryogenic temperature-programmed desorption mass spectrometry analysis method was employed to accurately measure the quantity of immobilized protein. We determined that less than 7 μg FN per cm(2) HA surface is adequate to improve adhesion, spreading, and differentiation of osteoprogenitor cells. We believe that the proposed fabrication method opens the door to combining and immobilizing two or more inorganic and organic materials on a solid substrate in a well-defined manner. The flexibility of this method enables the synthesis of new hybrid materials by simply tailoring the irradiation conditions according to the thermo-physical properties of the starting materials.

SERS activity of silver and gold nanostructured thin films deposited by pulsed laser ablation

NASA Astrophysics Data System (ADS)

Agarwal, N. R.; Tommasini, M.; Fazio, E.; Neri, F.; Ponterio, R. C.; Trusso, S.; Ossi, P. M.

2014-10-01

Nanostructured Au and Ag thin films were obtained by nanosecond pulsed laser ablation in presence of a controlled Ar atmosphere. Keeping constant other deposition parameters such as target-to-substrate distance, incidence angle, laser wavelength and laser fluence, the film morphology, revealed by SEM, ranges from isolated NPs to island structures and sensibly depends on gas pressure (10-100 Pa) and on the laser pulse number (500-3 × 10). The control of these two parameters allows tailoring the morphology and correspondingly the optical properties of the films. The position and width of the surface plasmon resonance peak, in fact, can be varied with continuity. The films showed remarkable surface-enhanced Raman activity (SERS) that depends on the adopted deposition conditions. Raman maps were acquired on micrometer-sized areas of both silver and gold substrates selected among those with the strongest SERS activity. Organic dyes of interest in cultural heritage studies (alizarin, purpurin) have been also considered for bench marking the substrates produced in this work. Also the ability to detect the presence of biomolecules was tested using lysozyme in a label free configuration.

Laser-driven high-frequency vibrations of metal blister surface

NASA Astrophysics Data System (ADS)

Kononenko, T. V.; Sinyavsky, M. N.; Konov, V. I.; Sentis, M.

2013-09-01

Time-resolved interferometric microscopy was applied to investigate laser-induced blistering of a titanium film on a silica substrate. Ablation of the titanium/silica interface by single 0.7 ns pulses within a certain fluence range results in local exfoliation of the metal film from the substrate avoiding, however, complete film destruction. Time-dependent transformation of the metal surface profile was reconstructed from the interference patterns within 0-13 ns time delay range. Transverse annular waves with typical amplitude of one hundred of nanometers and estimated traveling speed of few kilometers per second were revealed on the blister surface. The wave occurrence was attributed to fast inhomogeneous bending of the film covering the expanding blister. The resultant high-frequency (˜1 GHz) vibrations of the metal surface provide intensive inertial forces when such metalized target is used for blister-based laser-induced forward transfer of nanopowders and organic molecules.

Metal silicides with energetic pulses

NASA Astrophysics Data System (ADS)

D'Anna, E.; Leggieri, G.; Luches, A.; Majni, G.; Nava, F.; Ottaviani, G.

1986-07-01

Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

An algorithm for temperature correcting substrate moisture measurements: aligning substrate moisture responses with environmental drivers in polytunnel-grown strawberry plants

NASA Astrophysics Data System (ADS)

Goodchild, Martin; Janes, Stuart; Jenkins, Malcolm; Nicholl, Chris; Kühn, Karl

2015-04-01

The aim of this work is to assess the use of temperature corrected substrate moisture data to improve the relationship between environmental drivers and the measurement of substrate moisture content in high porosity soil-free growing environments such as coir. Substrate moisture sensor data collected from strawberry plants grown in coir bags installed in a table-top system under a polytunnel illustrates the impact of temperature on capacitance-based moisture measurements. Substrate moisture measurements made in our coir arrangement possess the negative temperature coefficient of the permittivity of water where diurnal changes in moisture content oppose those of substrate temperature. The diurnal substrate temperature variation was seen to range from 7° C to 25° C resulting in a clearly observable temperature effect in substrate moisture content measurements during the 23 day test period. In the laboratory we measured the ML3 soil moisture sensor (ThetaProbe) response to temperature in Air, dry glass beads and water saturated glass beads and used a three-phase alpha (α) mixing model, also known as the Complex Refractive Index Model (CRIM), to derive the permittivity temperature coefficients for glass and water. We derived the α value and estimated the temperature coefficient for water - for sensors operating at 100MHz. Both results are good agreement with published data. By applying the CRIM equation with the temperature coefficients of glass and water the moisture temperature coefficient of saturated glass beads has been reduced by more than an order of magnitude to a moisture temperature coefficient of

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

NASA Astrophysics Data System (ADS)

Gloux, F.; Ruterana, P.; Wojtowicz, T.; Lorenz, K.; Alves, E.

2006-10-01

The crystallographic nature of the damage created in GaN implanted by rare earth ions at 300 keV and room temperature has been investigated by transmission electron microscopy versus the fluence, from 7×10 13 to 2×10 16 at/cm 2, using Er, Eu or Tm ions. The density of point defect clusters was seen to increase with the fluence. From about 3×10 15 at/cm 2, a highly disordered 'nanocrystalline layer' (NL) appears on the GaN surface. Its structure exhibits a mixture of voids and misoriented nanocrystallites. Basal stacking faults (BSFs) of I 1, E and I 2 types have been noticed from the lowest fluence, they are I 1 in the majority. Their density increases and saturates when the NL is observed. Many prismatic stacking faults (PSFs) with Drum atomic configuration have been identified. The I 1 BSFs are shown to propagate easily through GaN by folding from basal to prismatic planes thanks to the PSFs. When implanting through a 10 nm AlN cap, the NL threshold goes up to about 3×10 16 at/cm 2. The AlN cap plays a protective role against the dissociation of the GaN up to the highest fluences. The flat surface after implantation and the absence of SFs in the AlN cap indicate its high resistance to the damage formation.

Clustering of gold particles in Au implanted CrN thin films: The effect on the SPR peak position

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Schmidt, E.; Mitrić, M.; Bibić, N.; Rakočević, Z.; Ronning, C.

2017-12-01

We report on the formation of gold particles in 280 nm thin polycrystalline CrN layers caused by Au+ ion implantation. The CrN layers were deposited at 150 °C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 150 keV Au+ ions to fluences of 2 × 1016 cm-2 to 4.1 × 1016 cm-2. The implanted layers were analysed by the means of Rutherford backscattering spectrometry, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry measurements. The results revealed that the Au atoms are situated in the near-surface region of the implanted CrN layers. At the fluence of 2 × 1016 cm-2 the formation of Au particles of ∼200 nm in diameter has been observed. With increasing Au ion fluence the particles coalesce into clusters with dimensions of ∼1.7 μm. The synthesized particles show a strong absorption peak associated with the excitation of surface plasmon resonances (SPR). The position of the SPR peak shifted in the range of 426.8-690.5 nm when the Au+ ion fluence was varied from 2 × 1016 cm-2 to 4.1 × 1016 cm-2. A correlation of the shift in the peak wavelength caused by the change in the particles size and clustering has been revealed, suggesting that the interaction between Au particles dominate the surface plasmon resonance effect.

Critical current enhancement by neutron irradiation of rapidly textured Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kramer, M.J.; Arrasmith, S.R.; McCallum, R.W.

1992-08-24

We have investigated the effect of fast neutron irradiation on c-axis aligned Bi[sub 2]Sr[sub 2]CaCU[sub 2]O[sub 8] (Bi2212) produced using a new technique. Amorphous Bi2212 was crystallized under 20 MPa uniaxial stress at 870[degree]C for 6 hrs. DC SQUID shows a transition onset of 90K. Material was cut into 2 [times] 2 [times] 0.150 mm slabs, sealed in quartz ampules, and irradiated at fluences of 10[sup 16], 5 [times] 10[sup 16], 2.5 [times] l0[sup 17], and 7.2 [times] 10[sup l7] n/cm[sup 2]. DC SQUID results show that J[sub c] is increased by a factor of 2.5 at 10K for fluencesmore » of 7.2 [times] l0[sup 17] for H parallel to c-axis for fields less than 3 T. The higher the fluence, the lower the dependency of J[sub c] on applied field and temperature. T[sub c] decreased by 1 K for a fluence of 2..5 [times] l0[sup 17] n/cm[sup 2] with an additional 2 K drop for 7.2 [times] l0[sup 17] n/cm[sup 2]. The increase in the width of the high field hysteresis loops for increasing fluence is more pronounced for samples measured normal to the c-axis.« less

Critical current enhancement by neutron irradiation of rapidly textured Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kramer, M.J.; Arrasmith, S.R.; McCallum, R.W.

1992-08-24

We have investigated the effect of fast neutron irradiation on c-axis aligned Bi{sub 2}Sr{sub 2}CaCU{sub 2}O{sub 8} (Bi2212) produced using a new technique. Amorphous Bi2212 was crystallized under 20 MPa uniaxial stress at 870{degree}C for 6 hrs. DC SQUID shows a transition onset of 90K. Material was cut into 2 {times} 2 {times} 0.150 mm slabs, sealed in quartz ampules, and irradiated at fluences of 10{sup 16}, 5 {times} 10{sup 16}, 2.5 {times} l0{sup 17}, and 7.2 {times} 10{sup l7} n/cm{sup 2}. DC SQUID results show that J{sub c} is increased by a factor of 2.5 at 10K for fluencesmore » of 7.2 {times} l0{sup 17} for H parallel to c-axis for fields less than 3 T. The higher the fluence, the lower the dependency of J{sub c} on applied field and temperature. T{sub c} decreased by 1 K for a fluence of 2..5 {times} l0{sup 17} n/cm{sup 2} with an additional 2 K drop for 7.2 {times} l0{sup 17} n/cm{sup 2}. The increase in the width of the high field hysteresis loops for increasing fluence is more pronounced for samples measured normal to the c-axis.« less

Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide

DOE PAGES

Brady, Nathaniel F.; Appavoo, Kannatassen; Seo, Minah; ...

2016-03-02

Here we report on ultrafast optical investigations of the light-induced insulator-to-metal phase transition in vanadium dioxide with controlled disorder generated by substrate mismatch. These results reveal common dynamics of this optically-induced phase transition that are independent of this disorder. Lastly, above the fluence threshold for completing the transition to the rutile crystalline phase, we find a common time scale, independent of sample morphology, of 40.5 ± 2 ps that is consistent with nucleation and growth dynamics of the R phase from the parent M1 ground state.

Stretchable multilayer self-aligned interconnects fabricated using excimer laser photoablation and in situ masking

NASA Astrophysics Data System (ADS)

Lin, Kevin L.; Jain, Kanti

2009-02-01

Stretchable interconnects are essential to large-area flexible circuits and large-area sensor array systems, and they play an important role towards the realization of the realm of systems which include wearable electronics, sensor arrays for structural health monitoring, and sensor skins for tactile feedback. These interconnects must be reliable and robust for viability, and must be flexible, stretchable, and conformable to non-planar surfaces. This research describes the design, modeling, fabrication, and testing of stretchable interconnects on polymer substrates using metal patterns both as functional interconnect layers and as in-situ masks for excimer laser photoablation. Excimer laser photoablation is often used for patterning of polymers and thin-film metals. The fluences for photoablation of polymers are generally much lower than the threshold fluence for removal or damage of high-thermallyconductive metals; thus, metal thin films can be used as in-situ masks for polymers if the proper fluence is used. Selfaligned single-layer and multi-layer interconnects of various designs (rectilinear and 'meandering') have been fabricated, and certain 'meandering' interconnect designs can be stretched up to 50% uniaxially while maintaining good electrical conductivity and structural integrity. These results are compared with Finite Element Analysis (FEA) models and are observed to be in good accordance with them. This fabrication approach eliminates masks and microfabrication processing steps as compared to traditional fabrication approaches; furthermore, this technology is scalable for large-area sensor arrays and electronic circuits, adaptable for a variety of materials and interconnects designs, and compatible with MEMS-based capacitive sensor technology.

Ferromagnetic order in diamond-like carbon films by Co implantation

NASA Astrophysics Data System (ADS)

Gupta, Prasanth; Williams, Grant; Markwitz, Andreas

2016-02-01

We report the observation of ferromagnetic order in diamond-like carbon (DLC) films made by mass selective ion beam deposition and after low energy implantation with Co ions. Different Co fluences were studied with a peak concentration of up to 25% at an average Co implantation depth of 30 nm. The saturation moment per Co atom (0.2-0.3 μ B) was found to be strongly dependent on temperature and it was significantly lower than that reported in bulk cobalt or cobalt nanoparticles (1.67 μ B per Co atom). The observed magnetic moment cannot be attributed to ferromagnetic nanoparticles as no evidence for superparamagnetism was detected. The magnetic order observed may be due to Co bonding in DLC possibly leading to dilute ferromagnetic semiconductor behaviour with an inhomogeneous distribution of cobalt atoms. Raman spectroscopy measurements showed that Co implantation resulted in an increase in the sp2 clustering with increasing Co fluence. Thus, our results show that Co implantation into DLC films increases the graphitic properties of the film and leads to magnetic order at room temperature.

Influence of Ar-ion implantation on the structural and mechanical properties of zirconia as studied by Raman spectroscopy and nanoindentation techniques

NASA Astrophysics Data System (ADS)

Kurpaska, L.; Jasinski, J.; Wyszkowska, E.; Nowakowska-Langier, K.; Sitarz, M.

2018-04-01

In this study, structural and nanomechanical properties of zirconia polymorphs induced by ion irradiation were investigated by means of Raman spectroscopy and nanoindentation techniques. The zirconia layer have been produced by high temperature oxidation of pure zirconium at 600 °C for 5 h at normal atmospheric pressure. In order to distinguish between the internal and external parts of zirconia, the spherical metallographic sections have been prepared. The samples were irradiated at room temperature with 150 keV Ar+ ions at fluences ranging from 1 × 1015 to 1 × 1017 ions/cm2. The main objective of this study was to distinguish and confirm different structural and mechanical properties between the interface layer and fully developed scale in the internal/external part of the oxide. Conducted studies suggest that increasing ion fluence impacts Raman bands positions (especially characteristic for tetragonal phase) and increases the nanohardness and Young's modulus of individual phases. This phenomenon has been examined from the point of view of stress-induced hardening effect and classical monoclinic → tetragonal (m → t) martensitic phase transformation.

Effect of neutron energy and fluence on deuterium retention behaviour in neutron irradiated tungsten

NASA Astrophysics Data System (ADS)

Fujita, Hiroe; Yuyama, Kenta; Li, Xiaochun; Hatano, Yuji; Toyama, Takeshi; Ohta, Masayuki; Ochiai, Kentaro; Yoshida, Naoaki; Chikada, Takumi; Oya, Yasuhisa

2016-02-01

Deuterium (D) retention behaviours for 14 MeV neutron irradiated tungsten (W) and fission neutron irradiated W were evaluated by thermal desorption spectroscopy (TDS) to elucidate the correlation between D retention and defect formation by different energy distributions of neutrons in W at the initial stage of fusion reactor operation. These results were compared with that for Fe2+ irradiated W with various damage concentrations. Although dense vacancies and voids within the shallow region near the surface were introduced by Fe2+ irradiation, single vacancies with low concentration were distributed throughout the sample for 14 MeV neutron irradiated W. Only the dislocation loops were introduced by fission neutron irradiation at low neutron fluence. The desorption peak of D for fission neutron irradiated W was concentrated at low temperature region less than 550 K, but that for 14 MeV neutron irradiated W was extended toward the higher temperature side due to D trapping by vacancies. It can be said that the neutron energy distribution could have a large impact on irradiation defect formation and the D retention behaviour.

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

A common fluence threshold for first positive and second positive phototropism in Arabidopsis thaliana

NASA Technical Reports Server (NTRS)

Janoudi, A.; Poff, K. L.

1990-01-01

The relationship between the amount of light and the amount of response for any photobiological process can be based on the number of incident quanta per unit time (fluence rate-response) or on the number of incident quanta during a given period of irradiation (fluence-response). Fluence-response and fluence rate-response relationships have been measured for second positive phototropism by seedlings of Arabidopsis thaliana. The fluence-response relationships exhibit a single limiting threshold at about 0.01 micromole per square meter when measured at fluence rates from 2.4 x 10(-5) to 6.5 x 10(-3) micromoles per square meter per second. The threshold values in the fluence rate-response curves decrease with increasing time of irradiation, but show a common fluence threshold at about 0.01 micromole per square meter. These thresholds are the same as the threshold of about 0.01 micromole per square meter measured for first positive phototropism. Based on these data, it is suggested that second positive curvature has a threshold in time of about 10 minutes. Moreover, if the times of irradiation exceed the time threshold, there is a single limiting fluence threshold at about 0.01 micromole per square meter. Thus, the limiting fluence threshold for second positive phototropism is the same as the fluence threshold for first positive phototropism. Based on these data, we suggest that this common fluence threshold for first positive and second positive phototropism is set by a single photoreceptor pigment system.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Life Test Approach for Refractory Metal/Sodium Heat Pipes

NASA Technical Reports Server (NTRS)

Martin, James J.; Reid, Robert S.

2006-01-01

Heat pipe life tests described in the literature have seldom been conducted on a systematic basis. Typically one or more heat pipes are built and tested for an extended period at a single temperature with simple condenser loading. This paper describes an approach to generate carefully controlled data that can conclusively establish heat pipe operating life with material-fluid combinations capable of extended operation. Approximately 10 years of operational life might be compressed into 3 years of laboratory testing through a combination of increased temperature and mass fluence. Two specific test series have been identified and include: investigation of long term corrosion rates based on the guidelines contained in ASTM G-68-80 (using 7 heat pipes); and investigation of corrosion trends in a cross correlation sequence at various temperatures and mass fluences based on a central composite test design (using 9 heat pipes). The heat pipes selected for demonstration purposes are fabricated from a Mo-44.5%Re alloy with a length of 0.3 meters and a diameter of 1.59 cm(to conserve material) with a condenser to evaporator length ratio of approximately 3. The wick is a crescent annular design formed from 400-mesh Mo-Re alloy material hot isostatically pressed to produce a final wick core of 20 microns or less.

Electron dynamics and prompt ablation of aluminum surface excited by intense femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Ionin, A. A.; Kudryashov, S. I.; Makarov, S. V.; Seleznev, L. V.; Sinitsyn, D. V.

2014-12-01

Thin aluminum film homogeneously heated by intense IR femtosecond laser pulses exhibits on the excitation timescale consequent fluence-dependent rise and drop of the IR-pump self-reflectivity, followed by its final saturation at higher fluences F > 0.3 J/cm2. This prompt optical dynamics correlates with the initial monotonic increase in the accompanying laser-induced electron emission, which is succeeded by its non-linear (three-photon) increase for F > 0.3 J/cm2. The underlying electronic dynamics is related to the initial saturation of IR resonant interband transitions in this material, followed by its strong instantaneous electronic heating via intraband transitions during the pump pulse resulting in thermionic emission. Above the threshold fluence of 0.3 J/cm2, the surface electronic heating is balanced during the pump pulse by simultaneous cooling via intense plasma removal (prompt ablation). The relationship between the deposited volume energy density in the film and its prompt electronic temperature derived from the self-reflection measurements using a Drude model, demonstrates a kind of electron "liquid-vapor" phase transition, driven by strong cubic optical non-linearity of the photo-excited aluminum.

Nano-scale phase transformation in Ti-implanted austenitic 301 stainless steel.

PubMed

Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Kinoshita, Hiroshi; Takahashi, Heishichiro

2003-01-01

Phase-transformation behaviours were investigated for austenitic 301 stainless steel during implantation at room temperature with 300 keV Ti ions to fluences of 8 x 10(19) to approximately 3 x 10(21) ions m(-2) by means of transmission electron microscopy. The cross-sectional specimen was prepared using a focused ion beam. Plan observation of the implanted specimen showed that phase transformation from gamma-phase to alpha-phase was induced by implantation to a fluence of 3 x 10(20) Ti ions m(-2). The nucleation of the irradiation (implantation)-induced phase increased with the increase of the dose. The orientation relationship between the gamma matrix and the induced alpha martensitic phase was identified as (011)alpha//(111)gamma and [11-1]alpha//[10-1], close to the Kurdjumov-Sachs relationship. Cross-sectional observation after implantation to a fluence of 5 x 10(20) ions m(-2) showed that phase transformation mostly nucleated near the surface and occurred in the higher the concentration gradient of the implanted ion, i.e. a higher stress concentration takes place and this stress introduced by the implanted ions acts as a driving force for the transformation.

Molecular dynamics study about the effect of substrate temperature on a-Si:H structure

NASA Astrophysics Data System (ADS)

Luo, Yaorong; Gong, Hongyong; Zhou, Naigen; Huang, Haibin; Zhou, Lang

2018-01-01

Molecular dynamics simulation of the microstructure of hydrogenated amorphous silicon (a-Si:H) thin film with different substrate temperatures has been performed based on the Tersoff potential. The results showed that: the silicon thin film maintained amorphous structure in the substrate temperature range from 200 to 1000 K; high substrate temperature could smooth the surface. The first neighbour Voronoi polyhedron was dominated by the tetrahedron. When the substrate temperature increased, the content of tetrahedrons increased due to the transition from pentahedrons and hexahedrons to tetrahedrons. The change of the second neighbour Voronoi polyhedron could be classified into two cases: one case with low medium coordination number decreased as temperature increased, while the other one with high medium coordination number showed an opposite change tendency. It indicated that the local paracrystalline structure arrangement of the second neighbour atoms had been enhanced as substrate temperature rose.

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

NASA Astrophysics Data System (ADS)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Carbon--silicon coating alloys for improved irradiation stability

DOEpatents

Bokros, J.C.

1973-10-01

For ceramic nuclear fuel particles, a fission product-retaining carbon-- silicon alloy coating is described that exhibits low shrinkage after exposure to fast neutron fluences of 1.4 to 4.8 x 10/sup 21/ n/cm/sup 2/ (E = 0.18 MeV) at irradiation temperatures from 950 to 1250 deg C. Isotropic pyrolytic carbon containing from 18 to 34 wt% silicon is co-deposited from a gaseous mixiure of propane, helium, and silane at a temperature of 1350 to 1450 deg C. (Official Gazette)

The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

NASA Astrophysics Data System (ADS)

Raoufi, Davood; Taherniya, Atefeh

2015-06-01

In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

A Common Fluence Threshold for First Positive and Second Positive Phototropism in Arabidopsis thaliana1

PubMed Central

Janoudi, Abdul; Poff, Kenneth L.

1990-01-01

The relationship between the amount of light and the amount of response for any photobiological process can be based on the number of incident quanta per unit time (fluence rate-response) or on the number of incident quanta during a given period of irradiation (fluence-response). Fluence-response and fluence rate-response relationships have been measured for second positive phototropism by seedlings of Arabidopsis thaliana. The fluence-response relationships exhibit a single limiting threshold at about 0.01 micromole per square meter when measured at fluence rates from 2.4 × 10−5 to 6.5 × 10−3 micromoles per square meter per second. The threshold values in the fluence rateresponse curves decrease with increasing time of irradiation, but show a common fluence threshold at about 0.01 micromole per square meter. These thresholds are the same as the threshold of about 0.01 micromole per square meter measured for first positive phototropism. Based on these data, it is suggested that second positive curvature has a threshold in time of about 10 minutes. Moreover, if the times of irradiation exceed the time threshold, there is a single limiting fluence threshold at about 0.01 micromole per square meter. Thus, the limiting fluence threshold for second positive phototropism is the same as the fluence threshold for first positive phototropism. Based on these data, we suggest that this common fluence threshold for first positive and second positive phototropism is set by a single photoreceptor pigment system. PMID:11537470

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

PubMed

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn; Peng, Jinxin; Ai, Wensi

2016-06-28

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrastmore » to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Experimental and Monte Carlo studies of fluence corrections for graphite calorimetry in low- and high-energy clinical proton beams.

PubMed

Lourenço, Ana; Thomas, Russell; Bouchard, Hugo; Kacperek, Andrzej; Vondracek, Vladimir; Royle, Gary; Palmans, Hugo

2016-07-01

The aim of this study was to determine fluence corrections necessary to convert absorbed dose to graphite, measured by graphite calorimetry, to absorbed dose to water. Fluence corrections were obtained from experiments and Monte Carlo simulations in low- and high-energy proton beams. Fluence corrections were calculated to account for the difference in fluence between water and graphite at equivalent depths. Measurements were performed with narrow proton beams. Plane-parallel-plate ionization chambers with a large collecting area compared to the beam diameter were used to intercept the whole beam. High- and low-energy proton beams were provided by a scanning and double scattering delivery system, respectively. A mathematical formalism was established to relate fluence corrections derived from Monte Carlo simulations, using the fluka code [A. Ferrari et al., "fluka: A multi-particle transport code," in CERN 2005-10, INFN/TC 05/11, SLAC-R-773 (2005) and T. T. Böhlen et al., "The fluka Code: Developments and challenges for high energy and medical applications," Nucl. Data Sheets 120, 211-214 (2014)], to partial fluence corrections measured experimentally. A good agreement was found between the partial fluence corrections derived by Monte Carlo simulations and those determined experimentally. For a high-energy beam of 180 MeV, the fluence corrections from Monte Carlo simulations were found to increase from 0.99 to 1.04 with depth. In the case of a low-energy beam of 60 MeV, the magnitude of fluence corrections was approximately 0.99 at all depths when calculated in the sensitive area of the chamber used in the experiments. Fluence correction calculations were also performed for a larger area and found to increase from 0.99 at the surface to 1.01 at greater depths. Fluence corrections obtained experimentally are partial fluence corrections because they account for differences in the primary and part of the secondary particle fluence. A correction factor, F(d), has been established to relate fluence corrections defined theoretically to partial fluence corrections derived experimentally. The findings presented here are also relevant to water and tissue-equivalent-plastic materials given their carbon content.

Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo.

PubMed

Heim, Amy; Lundholm, Jeremy

2013-01-01

Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm) exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velisa, Gihan; Wendler, Elke; Xue, Haizhou

The lack of fundamental understanding on the coupled effects of energy deposition to electrons and atomic nuclei on defect processes and irradiation response poses a significant roadblock for the design and control of material properties. In this work, SrTiO 3 has been irradiated with various ion species over a wide range of ion fluences at room temperature with a goal to deposit different amounts of energy to target electrons and atomic nuclei by varying the ratio of electronic to nuclear energy loss. Here, the results unambiguously show a dramatic difference in behavior of SrTiO 3 irradiated with light ions (Ne,more » O) compared to heavy ions (Ar). While the damage accumulation and amorphization under Ar ion irradiation are consistent with previous observations and existing models, the damage accumulation under Ne irradiation reveals a quasi-saturation state at a fractional disorder of 0.54 at the damage peak for an ion fluence corresponding to a dose of 0.5 dpa; this is followed by further increases in disorder with increasing ion fluence. In the case of O ion irradiation, the damage accumulation at the damage peak closely follows that for Ne ion irradiation up to a fluence corresponding to a dose of 0.5 dpa, where a quasi-saturation of fractional disorder level occurs at about 0.48; however, in this case, the disorder at the damage peak decreases slightly with further increases in fluence. This behavior is associated with changes in kinetics due to irradiation-enhanced diffusional processes that are dependent on electronic energy loss and the ratio of electronic to nuclear energy dissipation. Lastly, these findings are critical for advancing the fundamental understanding of ion-solid interactions and for a large number of applications in oxide electronics where SrTiO 3 is a foundational material.« less

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Near-infrared continuous-wave light driving a two-photon photochromic reaction with the assistance of localized surface plasmon.

PubMed

Tsuboi, Yasuyuki; Shimizu, Ryosuke; Shoji, Tatsuya; Kitamura, Noboru

2009-09-09

We demonstrate that a photochromic reaction can be driven by irradiation from a weak, near-infrared continuous-wave (NIR-CW) laser light. A two-photon ring-opening photochromic reaction of a diarylethene (DE) derivative can be induced by irradiation with a NIR-CW laser light (lambda = 808 nm). An ultrathin polymer film doped with DE in its closed form was coated onto a gold-nanoparticle-integrated glass substrate. Upon irradiation of the sample with a CW laser at low fluence (0.1-4.0 W/cm(2)), we could clearly observe bleaching of the DE (ring-opening reaction). Following the IR irradiation, the bleached absorption could be reversibly recovered by applying UV irradiation (ring-closing reaction). We verified that the yield of the photochromic ring-opening reaction of the DE was proportional to the square of the irradiation fluence. The origin of this NIR-CW-induced two-photon photochromic reaction is an "enhancing effect" that acts on the electromagnetic field (localized surface plasmon) of the gold nanoparticles. The DE interacts with the surface plasmon and receives energy from two photons, which excites it to a state from which the ring-opening reaction can be initiated.

High fluence swift heavy ion structure modification of the SiO2/Si interface and gate insulator in 65 nm MOSFETs

NASA Astrophysics Data System (ADS)

Ma, Yao; Gao, Bo; Gong, Min; Willis, Maureen; Yang, Zhimei; Guan, Mingyue; Li, Yun

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO2/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO2 and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

Study of vanadium doped ZnO films prepared by dc reactive magnetron sputtering at different substrate temperatures.

PubMed

Meng, Lijian; Teixeira, Vasco; Dos Santos, M P

2013-02-01

ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT-500 degrees C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 degrees C, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 degrees C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

A Distributed Fiber Optic Sensor Network for Online 3-D Temperature and Neutron Fluence Mapping in a VHTR Environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsvetkov, Pavel; Dickerson, Bryan; French, Joseph

2014-04-30

Robust sensing technologies allowing for 3D in-core performance monitoring in real time are of paramount importance for already established LWRs to enhance their reliability and availability per year, and therefore, to further facilitate their economic competitiveness via predictive assessment of the in-core conditions.

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge.

PubMed

Lim, Lian-Kuang; Yap, Seong-Ling; Bradley, D A

2018-01-01

The plasma focus device discussed herein is a Z-pinch pulsed-plasma arrangement. In this, the plasma is heated and compressed into a cylindrical column, producing a typical density of > 1025 particles/m3 and a temperature of (1-3) × 107 oC. The plasma focus has been widely investigated as a radiation source, including as ion-beams, electron-beams and as a source of x-ray and neutron production, providing considerable scope for use in a variety of technological situations. Thus said, the nature of the radiation emission depends on the dynamics of the plasma pinch. In this study of the characteristics of deuteron-beam emission, in terms of energy, fluence and angular distribution were analyzed. The 2.7 kJ plasma focus discharge has been made to operate at a pressure of less than 1 mbar rather than at its more conventional operating pressure of a few mbar. Faraday cup were used to determine deuteron-beam energy and deuteron-beam fluence per shot while CR-39 solid-state nuclear track detectors were employed in studying the angular distribution of deuteron emission. Beam energy and deuteron-beam fluence per shot have been found to be pressure dependent. The largest value of average deuteron energy measured for present conditions was found to be (52 ± 7) keV, while the deuteron-beam fluence per shot was of the order of 1015 ions/m2 when operated at a pressure of 0.2 mbar. The deuteron-beam emission is in the forward direction and is observed to be highly anisotropic.

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge

PubMed Central

Bradley, D. A.

2018-01-01

The plasma focus device discussed herein is a Z-pinch pulsed-plasma arrangement. In this, the plasma is heated and compressed into a cylindrical column, producing a typical density of > 1025 particles/m3 and a temperature of (1–3) × 107 oC. The plasma focus has been widely investigated as a radiation source, including as ion-beams, electron-beams and as a source of x-ray and neutron production, providing considerable scope for use in a variety of technological situations. Thus said, the nature of the radiation emission depends on the dynamics of the plasma pinch. In this study of the characteristics of deuteron-beam emission, in terms of energy, fluence and angular distribution were analyzed. The 2.7 kJ plasma focus discharge has been made to operate at a pressure of less than 1 mbar rather than at its more conventional operating pressure of a few mbar. Faraday cup were used to determine deuteron-beam energy and deuteron-beam fluence per shot while CR-39 solid-state nuclear track detectors were employed in studying the angular distribution of deuteron emission. Beam energy and deuteron-beam fluence per shot have been found to be pressure dependent. The largest value of average deuteron energy measured for present conditions was found to be (52 ± 7) keV, while the deuteron-beam fluence per shot was of the order of 1015 ions/m2 when operated at a pressure of 0.2 mbar. The deuteron-beam emission is in the forward direction and is observed to be highly anisotropic. PMID:29309425

Ion-irradiation resistance of the orthorhombic Ln2TiO5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) series

NASA Astrophysics Data System (ADS)

Aughterson, Robert D.; Lumpkin, Gregory R.; Ionescu, Mihail; Reyes, Massey de los; Gault, Baptiste; Whittle, Karl R.; Smith, Katherine L.; Cairney, Julie M.

2015-12-01

The response of Ln2TiO5 (where Ln is a lanthanide) compounds exposed to high-energy ions was used to test their suitability for nuclear-based applications, under two different but complementary conditions. Eight samples with nominal stoichiometry Ln2TiO5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy), of orthorhombic (Pnma) structure were irradiated, at various temperatures, with 1 MeV Kr2+ ions in-situ within a transmission electron microscope. In each case, the fluence was increased until a phase transition from crystalline to amorphous was observed, termed critical dose Dc. At certain elevated temperatures, the crystallinity was maintained irrespective of fluence. The critical temperature for maintaining crystallinity, Tc, varied non-uniformly across the series. The Tc was consistently high for La, Pr, Nd and Sm2TiO5 before sequential improvement from Eu to Dy2TiO5 with Tc's dropping from 974 K to 712 K. In addition, bulk Dy2TiO5 was irradiated with 12 MeV Au+ ions at 300 K, 723 K and 823 K and monitored via grazing-incidence X-ray diffraction (GIXRD). At 300 K, only amorphisation is observed, with no transition to other structures, whilst at higher temperatures, specimens retained their original structure. The improved radiation tolerance of compounds containing smaller lanthanides has previously been attributed to their ability to form radiation-induced phase transitions. No such transitions were observed here.

Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

2011-05-01

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO.

PubMed

Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

2011-05-25

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

GCR-Induced Photon Luminescence of the Moon

NASA Technical Reports Server (NTRS)

Lee, K. T.; Wilson, T. L.

2008-01-01

It is shown that the Moon has a ubiquitous photon luminescence induced by Galactic cosmic-rays (GCRs), using the Monte Carlo particle-physics program FLUKA. Both the fluence and the flux of the radiation can be determined by this method, but only the fluence will be presented here. This is in addition to thermal radiation emitted due to the Moon s internal temperature and radioactivity. This study is a follow-up to an earlier discussion [1] that addressed several misconceptions regarding Moonshine in the Earth-Moon system (Figure 1) and predicted this effect. There also exists a related x-ray fluorescence induced by solar energetic particles (SEPs, <350 MeV) and solar photons at lower x-ray energies, although this latter fluorescence was studied on Apollo 15 and 16 [2- 5], Lunar Prospector [6], and even EGRET [7].

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

Some characteristics of matrix-assisted UV laser desorption/ionization mass spectrometric analysis of large proteins

NASA Astrophysics Data System (ADS)

Perera, I. K.; Kantartzoglou, S.; Dyer, P. E.

1996-12-01

We have performed experiments to explore the characteristics of the matrix-assisted laser desorption/ionization (MALDI) process and to ascertain optimal operational conditions for observing intact molecular ions of large proteins. In this study, several methods have been adopted for the preparation of analyte samples. Of these, the samples prepared with the simple dried-droplet method were found to be the most suitable for the generation of the large molecular clusters, while the near-uniform spin-coated samples were observed to produce highly reproducible molecular ion signals of relatively high mass resolutions. A resulting mass spectrum which illustrates the formation of cluster ions up to the 26-mer [26M+H]+ of bovine insulin corresponding to a mass of about 150,000 Da, is presented. The effect of fluence on the extent of clustering of protein molecules has been studied, the results revealing the existence of an optimum fluence for detecting the large cluster ions. Investigations have also indicated that the use of polyethylene-coated metallic substrates as sample supports can considerably reduce the fragmentation of the matrix/analyte molecular ions and the desorption of "neat" MALDI matrices deposited on these polyethylene-coated sample probes enhance their aggregation, forming up to the heptamer [7M+H]+ of the matrix, ferulic acid. The dependence of the mass resolution on the applied acceleration voltage and the desorption fluence has been examined and the results obtained are discussed in terms of a simple analysis of the linear time-of-flight mass spectrometer. A spectrum of chicken egg lysozyme (M~14,306) displaying the high mass resolutions (M/[Delta]M~690) that can be attained when the mass spectrometer is operated in the reflectron mode is also presented.

Fabrication of mitigation pits for improving laser damage resistance in dielectric mirrors by femtosecond laser machining

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolfe, Justin E.; Qiu, S. Roger; Stolz, Christopher J.

2011-03-20

Femtosecond laser machining is used to create mitigation pits to stabilize nanosecond laser-induced damage in multilayer dielectric mirror coatings on BK7 substrates. In this paper, we characterize features and the artifacts associated with mitigation pits and further investigate the impact of pulse energy and pulse duration on pit quality and damage resistance. Our results show that these mitigation features can double the fluence-handling capability of large-aperture optical multilayer mirror coatings and further demonstrate that femtosecond laser macromachining is a promising means for fabricating mitigation geometry in multilayer coatings to increase mirror performance under high-power laser irradiation.

Gallium Arsenide solar cell radiation damage experiment

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

1991-01-01

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Swift heavy ion irradiation studies of GdFeO3 orthoferrite thin films

NASA Astrophysics Data System (ADS)

Kaur, Pawanpreet; Pandit, Rabia; Sharma, K. K.; Kumar, Ravi

2018-04-01

Thin films of GdFeO3, orthoferrite have been grown on MgO (001) substrate by pulsed laser deposition technique (PLD) to investigate the effect of swift heavy ion irradiation on their structural and magnetic properties. Thin films were irradiated with 200 MeV Ag15+ ions with fluence of 1×1011ions/cm2. The results of X-ray diffraction, atomic force microscopy and vibrating sample magnetometer characterization techniques are found to be different for the irradiated film from that of the pristine sample. The modifications in the irradiated samples are explained in terms of the ion-induced disorder.

Safety, tolerability, and efficacy evaluation of the SlimME device for circumference reduction.

PubMed

Ferrando, Giovanni

2018-02-07

To assess the short- and long-term thermal impact of subclinical and clinical regimens of a single, non-invasive uniform ultrasound treatment session on subcutaneous adipose tissue (SAT). Prospective, open-label, single-arm, split-side study. Patients (n = 17) were subjected to uniform ultrasound treatment, delivered in a single session with the SlimME device. The device was set to one of four treatment regimens, which differed in their durations and energy fluences during the raise and maintenance phases. Up to six abdominal regions were treated, with six patients receiving a different treatment on each side of the abdomen. Safety was assessed by measuring skin surface temperature, evaluating expected skin responses immediately and 30 min after treatment and via patient ratings of pain and discomfort. Efficacy of raising and then maintaining SAT temperatures at 48°C, was determined by routinely measuring SAT temperatures during the treatment session and by histological analysis of samples collected 7 (n = 13) or 90 (n = 4) days after treatment. Trace to mild erythema was observed in up to 48% of the treated zones, which, in most cases, resolved within 30 minutes. No significant rise in mean skin surface temperature (≤26.5°C) was recorded following any of the four tested regimens. Overall, patients reported tolerability to treatment, with the highest mean pain score registered for the moderate and high intensity regimens (4.4 ± 1.5 and 4.9 ± 1.4, respectively). Mean SAT temperatures did not exceed 48.4 ± 2.5°C and were effectively maintained throughout the maintenance phase of the treatment session. Low-energy fluence led to localized fat coagulative necrotic lesions, surrounded by subacute rim of inflammation, while high-energy fluence induced fat coagulative necrosis alongside granulomatous panniculitis, which resolved within 90 days. The tested uniform ultrasound regimens elicited SAT temperature elevations, with a subsequent energy-dependent increase in degree of fat necrosis. At the same time, the unique design spared the surrounding tissue from thermal damage and was associated with minimal discomfort. Taken together, the SlimME device constitutes an effective tool for destruction of stubborn hypodermal fat deposits. Lasers Surg. Med. © 2018 The Authors. Lasers in Surgery and Medicine Published by Wiley Periodicals, Inc. © 2018 The Authors. Lasers in Surgery and Medicine Published by Wiley Periodicals, Inc.

Tungsten as a plasma-facing material in fusion devices: impact of helium high-temperature irradiation on hydrogen retention and damages in the material

NASA Astrophysics Data System (ADS)

Bernard, E.; Sakamoto, R.; Kreter, A.; Barthe, M. F.; Autissier, E.; Desgardin, P.; Yamada, H.; Garcia-Argote, S.; Pieters, G.; Chêne, J.; Rousseau, B.; Grisolia, C.

2017-12-01

Plasma-facing materials for next generation fusion devices, like ITER and DEMO, have to withstand intense fluxes of light elements (notably helium and hydrogen isotopes). For tungsten (W), helium (He) irradiation leads to major changes in the material morphology, rising concerns about properties such as material structure conservation and hydrogen (H) retention. The impact of preceeding He irradiation conditions (temperature, flux and fluence) on H trapping were investigated on a set of W samples exposed to the linear plasma device PSI-2. Positron annihilation spectroscopy (PAS) was carried out to probe the free volume of defects created by the He exposure in the W structure at the atomic scale. In parallel, tritium (T) inventory after exposure was evaluated through T gas loading and desorption at the Saclay Tritium Lab. First, we observed that the material preparation prior to He irradiation was crucial, with a major reduction of the T trapping when W was annealed at 1773 K for 2 h compared to the as-received material. PAS study confirms the presence of He in the bubbles created in the material surface layer, whose dimensions were previously characterized by transmission electron microscopy and grazing-incidence small-angle x-ray scattering, and demonstrates that even below the minimal energy for displacement of He in W, defects are created in almost all He irradiation conditions. The T loading study highlights that increasing the He fluence leads to higher T inventory. Also, for a given fluence, increasing the He flux reduces the T trapping. The very first steps of a parametric study were set to understand the mechanisms at stake in those observed material modifications, confirming the need to pursue the study with a more complete set of surface and irradiation conditions.

Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

DOE PAGES

Dalal, Shakeel S.; Ediger, M. D.

2015-02-09

Stable organic glasses prepared by physical vapor deposition transform into the supercooled liquid via propagating fronts of molecular mobility, a mechanism different from that exhibited by glasses prepared by cooling the liquid. In this paper, we show that spectroscopic ellipsometry can directly observe this front-based mechanism in real time and explore how the velocity of the front depends upon the substrate temperature during deposition. For the model glass former indomethacin, we detect surface-initiated mobility fronts in glasses formed at substrate temperatures between 0.68T g and 0.94T g. At each of two annealing temperatures, the substrate temperature during deposition can changemore » the transformation front velocity by a factor of 6, and these changes are imperfectly correlated with the density of the glass. We also observe substrate-initiated fronts at some substrate temperatures. By connecting with theoretical work, we are able to infer the relative mobilities of stable glasses prepared at different substrate temperatures. Finally, an understanding of the transformation behavior of vapor-deposited glasses may be relevant for extending the lifetime of organic semiconducting devices.« less

Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

NASA Astrophysics Data System (ADS)

Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

2018-05-01

Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

A photochemical approach designed to improve the coating of nanoscale silver films onto food plastic wrappings intended to control bacterial hazards

NASA Astrophysics Data System (ADS)

Mustatea, Gabriel; Vidal, Loïc; Calinescu, Ioan; Dobre, Alina; Ionescu, Mariana; Balan, Lavinia

2015-01-01

Plasmonic silver film was directly generated on a variety of substrates through a facile and environmentally friendly method, which involves a UV-photoreduction process without any reducing or stabilizing agent and requiring no thermal step. Top-coated films of unprotected silver nanoparticles (3-11 nm) were generated from hydroalcoholic AgNO3 solution and directly on glass substrates or food packaging plastic wraps, low density polyethylene film, and polyvinyl chloride. The natural antibacterial activity of the material was evaluated. The correlation between silver migration and antimicrobial activity of silver-functionalized substrates against pure strains of gram-negative bacteria ( Escherichia coli) and gram-positive bacteria ( Staphylococcus aureus) was demonstrated. By way of illustration, food plastic wraps top-coated in this way exhibited a high antibacterial activity. The metal nanoparticle film obtained in this way was characterized and the influence of several parameters (fluence, exposure, silver nitrate concentration, and nature of the free radicals generator) on their formation was studied. Moreover, by shaping the actinic beam with an appropriate device, it is very easy to pattern the brown yellow silver nanofilm or to print messages in plain text.

Fowler-Nordheim analysis of oxides on 4H-SiC substrates using noncontact metrology

NASA Astrophysics Data System (ADS)

Oborina, Elena I.; Benjamin, Helen N.; Hoff, Andrew M.

2009-10-01

A noncontact corona-Kelvin metrology technique was applied to investigate stress-induced leakage current (SILC) on thermal and afterglow thermal oxides grown on n-type 4H-SiC substrates. The equivalent oxide thickness was extracted from noncontact C-V measurements and used to obtain the experimental Fowler-Nordheim (F-N) plots. Differences between characteristics calculated from theory and experimental plots were found. Modification of the theoretical F-N characteristics with respect to trapped charge phenomena effectively eliminated the offset between theoretically predicted and experimental curves for thermal oxides grown at atmosphere but was unable to achieve such agreement in the case of afterglow oxides. Only variations in the effective barrier and trapped charge combined provided overlay between calculated and experimental F-N plots for afterglow oxides. In addition, the SILC property VSASS, or self-adjusting steady state voltage, is suggested as a useful monitor characteristic for oxides on SiC. This parameter was larger for afterglow oxides compared to thermal oxides of similar thickness. The SASS voltage also showed that the afterglow oxide interface was stable to substrate injected stress fluence in accumulation compared to thermal oxide of comparable thickness.

Ion irradiation synthesis of Ag-Au bimetallic nanospheroids in SiO2 glass substrate with tunable surface plasmon resonance frequency

NASA Astrophysics Data System (ADS)

Meng, Xuan; Shibayama, Tamaki; Yu, Ruixuan; Takayanagi, Shinya; Watanabe, Seiichi

2013-08-01

Ag-Au bimetallic nanospheroids with tunable localized surface plasmon resonance (LSPR) were synthesized by 100 keV Ar-ion irradiation of 30 nm Ag-Au bimetallic films deposited on SiO2 glass substrates. A shift of the LSPR peaks toward shorter wavelengths was observed up to an irradiation fluence of 1.0 × 1017 cm-2, and then shifted toward the longer wavelength because of the increase of fragment volume under ion irradiation. Further control of LSPR frequency over a wider range was realized by modifying the chemical components. The resulting LSPR frequencies lie between that of the pure components, and an approximate linear shift of the LSPR toward the longer wavelength with the Au concentration was achieved, which is in good agreement with the theoretical calculations based on Gans theory. In addition, the surface morphology and compositions were examined with a scanning electron microscope equipped with an energy dispersive spectrometer, and microstructural characterizations were performed using a transmission electron microscope. The formation of isolated photosensitive Ag-Au nanospheroids with a FCC structure partially embedded in the SiO2 substrate was confirmed, which has a potential application in solid-state devices.

Atom probe tomography characterization of neutron irradiated surveillance samples from the R. E. Ginna reactor pressure vessel

NASA Astrophysics Data System (ADS)

Edmondson, P. D.; Miller, M. K.; Powers, K. A.; Nanstad, R. K.

2016-03-01

Surveillance samples of a low copper (nominally 0.05 wt.% Cu) forging and a higher copper (0.23 wt.% Cu) submerged arc weld from the R. E. Ginna reactor pressure vessel have been characterized by atom probe tomography (APT) after exposure to three levels of neutron irradiation, i.e., fluences of 1.7, 3.6 and 5.8 × 1023 n.m-2 (E > 1 MeV), and inlet temperatures of ∼289 °C (∼552 °F). As no copper-enriched precipitates were observed in the low copper forging, and the measured copper content in the ferrite matrix was 0.04± <0.01 at.% Cu, after neutron irradiation to a fluence of 1.7 × 1023 n.m-3, this copper level was below the solubility limit. A number density of 2 × 1022 m-3 of Ni-, Mn- Si-enriched precipitates with an equivalent radius of gyration of 1.7 ± 0.4 nm were detected in the sample. However, Cu-, Ni-, Mn-enriched precipitates were observed in specimens cut from different surveillance specimens from the same forging material in which the overall measured copper level was 0.08± <0.01 at.% (fluence of 3.6 × 1023 n.m-3) and 0.09± <0.01 at.% Cu (fluence of 5.8 × 1023 n.m-3). Therefore, these slightly higher copper contents were above the solubility limit of Cu under these irradiation conditions. A best fit of all the composition data indicated that the size and number density of the Cu-enriched precipitates increased slightly in both size and number density by additional exposure to neutron irradiation. High number densities of Cu-enriched precipitates were observed in the higher Cu submerged arc weld for all irradiated conditions. The size and number density of the precipitates in the welds were higher than in the same fluence forgings. Some Cu-enriched precipitates were found to have Ni-, Mn- Si-, and P-enriched regions on their surfaces suggesting a preferential nucleation site. Atom maps revealed P, Ni, and Mn segregation to, and preferential precipitation of, Cu-enriched precipitates over the surface of a grain boundary in the low fluence weld.

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr; Gungor, Neşe; Haider, Ali

2016-01-15

Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties,more » the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.« less

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

NASA Astrophysics Data System (ADS)

Güner, S.; Budak, S.; Gibson, B.; Ila, D.

2014-08-01

We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing.

PubMed

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-12-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3×10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

PubMed Central

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-01-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices. PMID:27878029

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

NASA Technical Reports Server (NTRS)

Brucker, G. J.

1971-01-01

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Effects of substrate preheating during direct energy deposition on microstructure, hardness, tensile strength, and notch toughness

NASA Astrophysics Data System (ADS)

Baek, Gyeong Yun; Lee, Ki Yong; Park, Sang Hu; Shim, Do Sik

2017-11-01

This study examined the effects of substrate preheating for the hardfacing of cold-press dies using the high-speed tool steel AISI M4. The preheating of the substrate is a widely used technique for reducing the degree of thermal deformation and preventing crack formation. We investigated the changes in the metallurgical and mechanical properties of the high-speed tool steel M4 deposited on an AISI D2 substrate with changes in the substrate preheating temperature. Five preheating temperatures (100-500 °C; interval of 100 °C) were selected, and the changes in the temperature of the substrate during deposition were observed. As the preheating temperature of the substrate was increased, the temperature gradient between the melting layer and the substrate decreased; this prevented the formation of internal cracks, owing to thermal stress relief. Field-emission scanning electron microscopy showed that a dendritic structure was formed at the interface between the deposited layer and the substrate while a cellular microstructure was formed in the deposited layer. As the preheating temperature was increased, the sizes of the cells and precipitated carbides also increased. Furthermore, the hardness increased slightly while the strength and toughness decreased. Moreover, the tensile and impact properties deteriorated rapidly at excessively high preheating temperatures (greater than 500 °C). The results of this study can be used as preheating criteria for achieving the desired mechanical properties during the hardfacing of dies and molds.

Development and Testing of Dispersion-Strengthened Tungsten Alloys via Spark Plasma Sinterin

NASA Astrophysics Data System (ADS)

Lang, Eric; Madden, Nathan; Smith, Charles; Krogstad, Jessica; Allain, Jean Paul

2017-10-01

Tungsten (W) is a common plasma-facing component (PFC) material in the divertor region of tokamak fusion devices due to its high melting point and high sputter threshold. However, W is intrinsically brittle and is further embrittled under neutron irradiation, and the low recrystallization temperature pose complications in fusion environments. More ductile W alloys, such as dispersion-strengthened tungsten are being developed. In this work, W samples are processed via spark plasma sintering (SPS) with TiC, ZrC, and TaC dispersoids alloyed from 0.5 to 10 weight %. SPS is a powder compaction technique that provides high pressure and heating rates via electrical current, allowing for a lower final temperature and hold time for compaction. Initial testing of material properties, smicrostructure, and composition of specimens will be presented. Deuterium and helium irradiations have been performed in IGNIS, a multi-functional, in-situ irradiation and characterization facility at the University of Illinois. High-flux, low-energy exposures at the Magnum-PSI facility at DIFFER exposed samples to a D fluence of 1×1026 cm-2 and He fluence of 1x1025-1x1026 cm-2 at temperatures of 300-1000 C. In-situ chemistry changes via XPS and ex-situ morphology changes via SEM will be studied. Work supported by US DOE Contract DE-SC0014267.

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.; Swartz, C. K.; Hart, R. E., Jr.; Fan, J. C. C.

1982-01-01

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Effects of radiation on crack-initiation and crack-arrest toughness for SA508 Cl. 3 steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milella, P.P.; Pini, A.; Iskander, S.K.

1995-11-01

An investigation was carried out to determine the effects of neutron irradiation, conducted in several different test-reactors at approximately 280 C, on the mechanical properties of an SA508 Class 3 carbon steel ring forging produced in Italy as a prototype of a pressurized water reactor vessel. The research had two primary objectives: (1) to investigate the effect of a various levels of neutron irradiation (fluences from 1 to 5.5 10{sup 19} n/cm{sup 2} [E>1 MeV]) on the strength, initiation and arrest toughness and ductile-to-brittle transition temperature, and (2) to determine if Charpy data and empirical prediction equations provide conservative estimatesmore » of irradiation effects on the K{sub Ic} and K{sub Ia} transition curves. The paper reports results from tension, Charpy V-notch (CVN) fracture toughness, and crack-arrest tests performed on both unirradiated and irradiated material. It was found that both Charpy V-notch transition temperature shifts and two prediction equations provided conservative estimates of shifts in fracture initiation and fracture arrest transition temperatures for the steel investigated. The 54 C shift of the Charpy V-notch transition curves at a fluence level of 5.5 10{sup 19} n/cm{sup 2} suggests the possibility of extending the component life beyond the common 40 year design life.« less

Diffusion of hydrogen in a hydrogen-saturated tungsten

NASA Astrophysics Data System (ADS)

Krstic, Predrag; Kaganovich, Igor

2015-11-01

Hydrogen diffusion in monoscrystalline tungsten is studied by molecular dynamics with BOP potential in function of hydrogen concentration and temperature. Tungsten surface is prepared by cumulative irradiation of the 25 eV deuterium atoms at various fluences. The diffusion coefficients for T>500K and various D concentrations were calculated from the average slope of the mean square displacements of deuterium as functions of time. The accumulation of deuterium suppresses its diffusion at all temperatures. The results are in a reasonable agreement with the existing experiments. Supported by the LDRD of PPPL.

Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Beuneu, François

2005-04-01

We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO2:Y with 9.5 mol% Y2O3, by swift electron and ion-irradiations. YSZ single crystals with the <1 0 0> orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13C ions. Electron and ion beams produce the same two color centers, namely an F+-type center (singly ionized oxygen vacancy) and the so-called T-center (Zr3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment.

Substrate temperature effect on structural and optical properties of Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Jariwala, B. S.; Shah, D. V.; Kheraj, Vipul

2012-06-01

Structural and optical properties of Bi2Te3 thin films, thermally evaporated on well-cleaned glass substrates at different substrate temperatures, are reported here. X-ray diffraction was carried out for the structural characterization. XRD patterns of the films exhibit preferential orientation along the [0 1 5] direction for the films deposited at all the substrate temperatures together with other supported planes [2 0 5] & [1 1 0]. All other deposition conditions like thickness, deposition rate and pressure were maintained same throughout the experiment. X-ray diffraction lines confirm that the grown films are polycrystalline in nature with hexagonal crystal structure. The effect of substrate temperature on lattice constants, grain size, micro strain, number of crystallites and dislocation density have been investigated and reported in this paper. Also the substrate temperature effect on the optical property has been also investigated using the FTIR spectroscopy.

Density patterns in metal films produced by laser interference.

PubMed

Peláez, R J; Afonso, C N; Škereň, M; Bulíř, J

2015-01-26

Fringed periodic patterns have been produced by laser interference at 193 nm in an almost continuous 9.5 nm-thick Ag film that exhibits a number density of ≈189 μm(-2) holes. Patterns with four periods in the range of 1.8-10.2 μm were produced by changing the projection optics. At high fluences, the film breaks up into nanostructures around the regions exposed to intensity maxima due to laser-induced melting. At low fluences, a new process is observed that is triggered at the initial holes of the film by solid-state dewetting. Once the fluence is high enough to prevent the temperature balance across the pattern, mass transport from cold to hot regions is observed, leading to film densification in regions around intensity maxima sites. The novel patterns are thus formed by fringes of material that is more/less dense than the as-grown film, each of which is located at intensity maxima/minima sites, and have negligible topography. Comparing the present results to earlier reports in the literature shows that the thermal gradient across the pattern is influenced by the initial film microstructure, rather than by the thickness. The existence of a minimum period, which is achievable depending on the thermal continuity of the film, is also discussed.

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Effect of scanning speed on continuous wave laser scribing of metal thin films: theory and experiment

NASA Astrophysics Data System (ADS)

Shahbazi, AmirHossein; Koohian, Ata; Madanipour, Khosro

2017-01-01

In this paper continuous wave laser scribing of the metal thin films have been investigated theoretically and experimentally. A formulation is presented based on parameters like beam power, spot size, scanning speed and fluence thresholds. The role of speed on the transient temperature and tracks width is studied numerically. By using two frameworks of pulsed laser ablation of thin films and laser printing on paper, the relation between ablation width and scanning speed has been derived. Furthermore, various speeds of the focused 450 nm continuous laser diode with an elliptical beam spot applied to a 290 nm copper thin film coated on glass, experimentally. The beam power was 150 mW after spatial filtering. By fitting the theoretical formulation to the experimental data, the threshold fluence and energy were obtained to be 13.2 J mm-2 and 414~μ J respectively. An anticipated theoretical parameter named equilibrium~border was verified experimentally. It shows that in the scribing of the 290 nm copper thin film, at a distance where the intensity reaches about 1/e of its maximum value, the absorbed fluence on the surface is equal to zero. Therefore the application of continuous laser in metal thin film ablation has different mechanism from pulsed laser drilling and beam scanning in printers.

Fluorescence measurement of diode (805 nm) laser-induced release of 5,6-CF from DSPC liposomes for monitoring of temperature: an in vivo study in rat liver using indocyanine green potentiation

NASA Astrophysics Data System (ADS)

Mordon, Serge R.; Desmettre, Thomas; Devoisselle, Jean-Marie; Soulie-Begu, Sylvie

1995-05-01

This in-vivo study examines the validity of fluorescence measurement of laser-induced release of temperature sensitive liposome-encapsulated dye for monitoring of temperature and prediction of tissue thermal damage. It is performed in rat liver after i.v. injection of liposomes loaded with a fluorescent dye and i.v. injection of Indocyanine Green (ICG) for diode laser potentiation. Temperature sensitive liposomes (DSPC: Di- Stearoyl-Phosphatidyl-Choline) are loaded with 5,6-Carboxyfluorescein (5,6-CF). These liposomes (1.5 ml solution) and ICG (1.5 ml solution-5 mg/kg) are injected to adult male wistar rats. Two hours later, the liver is exposed and irradiated with a 0.8 W diode laser using pulses lasting from 1 s to 6 s (fluence ranging from 16 to 98 J/cm+2)). Simultaneously, the fluorescence emission is measured with a fluorescent imaging system. Results show that the fluorescence intensity increases linearly form 18 J/cm2 up to 75 J/cm2. These fluences correspond to surface temperatures between 42°C to 64°C. The measurements appear to be highly reproducible. In this temperature range, the accuracy is +/- 3°C. The maximum intensity is observed immediately after the laser is switched off and a decrease of the fluorescence intensity is observed (27% in 20 minutes) due to the 5.6-CF clearance. However, the ratio (IF/Ibck) remains almost stable over this period of time and the determination of the temperature is still possible with a good accuracy even 20 minutes after laser irradiation. In conclusion, temperature monitoring by using fluorescence measurement of laser-induced release of liposome-encapsulated dye is clearly demonstrated. This procedure could conceivably prove useful for controlling the thermal coagulation of biological tissues.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Hotspot electron temperature from x-ray continuum measurements on the NIF

NASA Astrophysics Data System (ADS)

Jarrott, L. C.; Benedetti, L. R.; Chen, H.; Izumi, N.; Khan, S. F.; Ma, T.; Nagel, S. R.; Landen, O. L.; Pak, A.; Patel, P. K.; Schneider, M.; Scott, H. A.

2016-11-01

We report on measurements of the electron temperature in the hotspot of inertially confined, layered, spherical implosions on the National Ignition Facility using a differential filtering diagnostic. Measurements of the DT and DD ion temperatures using neutron time-of-flight detectors are complicated by the contribution of hot spot motion to the peak width, which produce an apparent temperature higher than the thermal temperature. The electron temperature is not sensitive to this non-thermal velocity and is thus a valuable input to interpreting the stagnated hot spot conditions. Here we show that the current differential filtering diagnostic provides insufficient temperature resolution for the hot spot temperatures of interest. We then propose a new differential filter configuration utilizing larger pinhole size to increase spectral fluence, as well as thicker filtration. This new configuration will improve measurement uncertainty by more than a factor of three, allowing for a more accurate hotspot temperature.

Hotspot electron temperature from x-ray continuum measurements on the NIF.

PubMed

Jarrott, L C; Benedetti, L R; Chen, H; Izumi, N; Khan, S F; Ma, T; Nagel, S R; Landen, O L; Pak, A; Patel, P K; Schneider, M; Scott, H A

2016-11-01

We report on measurements of the electron temperature in the hotspot of inertially confined, layered, spherical implosions on the National Ignition Facility using a differential filtering diagnostic. Measurements of the DT and DD ion temperatures using neutron time-of-flight detectors are complicated by the contribution of hot spot motion to the peak width, which produce an apparent temperature higher than the thermal temperature. The electron temperature is not sensitive to this non-thermal velocity and is thus a valuable input to interpreting the stagnated hot spot conditions. Here we show that the current differential filtering diagnostic provides insufficient temperature resolution for the hot spot temperatures of interest. We then propose a new differential filter configuration utilizing larger pinhole size to increase spectral fluence, as well as thicker filtration. This new configuration will improve measurement uncertainty by more than a factor of three, allowing for a more accurate hotspot temperature.

Influence of substrate temperature on properties of MgF 2 coatings

NASA Astrophysics Data System (ADS)

Yu, Hua; Qi, Hongji; Cui, Yun; Shen, Yanming; Shao, JianDa; Fan, ZhengXiu

2007-05-01

Thermal boat evaporation was employed to prepare MgF 2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 °C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 °C that the refractive index was higher than those deposited at 244 and 277 °C. The tensile residual stresses were exhibited in all MgF 2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 °C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Effect of 100 MeV Si7+ ions' irradiation on Pd/n-GaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Sinha, O. P.

2017-12-01

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100 MeV Si7+ ions for the varying fluence of 1012-1013 ions/cm2. The devices have been characterized by I-V and C-V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C-V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I-V and C-V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps' level to cause strong frequency dependence behavior.

Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gontad, Francisco; Lorusso, Antonella, E-mail: antonella.lorusso@le.infn.it; Perrone, Alessio

This work reports the fabrication of Nb/Pb structures with an application as photocathode devices. The use of relatively low energy densities for the ablation of Nb with ultrashort pulses favors the reduction of droplets during the growth of the film. However, the use of laser fluences in this ablation regime results in a consequent reduction in the average deposition rate. On the other hand, despite the low deposition rate, the films present a superior adherence to the substrate and an excellent coverage of the irregular substrate surface, avoiding the appearance of voids or discontinuities on the film surface. Moreover, themore » low energy densities used for the ablation favor the growth of nanocrystalline films with a similar crystalline structure to the bulk material. Therefore, the use of low ablation energy densities with ultrashort pulses for the deposition of the Nb thin films allows the growth of very adherent and nanocrystalline films with adequate properties for the fabrication of Nb/Pb structures to be included in superconducting radiofrequency cavities.« less

Influence of solidification on the impact of supercooled water drops onto cold surfaces

NASA Astrophysics Data System (ADS)

Li, Hai; Roisman, Ilia V.; Tropea, Cameron

2015-06-01

This study presents an experimental investigation of the impact of a supercooled drop onto hydrophilic and superhydrophobic substrates. The aim is to better understand the process of airframe icing caused by supercooled large droplets, which has been recently identified as a severe hazard in aviation. The Weber number and Reynolds number of the impinging drop ranged from 200 to 300 and from 2600 to 5800, respectively. Drop impact, spreading, and rebound were observed using a high-speed video system. The maximum spreading diameter of an impacting drop on hydrophilic surfaces was measured. The temperature effect on this parameter was only minor for a wide range of the drop and substrate temperatures. However, ice/water mixtures emerged when both the drop and substrate temperatures were below 0 °C. Similarly, drop rebound on superhydrophobic substrates was significantly hindered by solidification when supercooled drop impacted onto substrates below the freezing point. The minimum receding diameter and the speed of ice accretion on the substrate were measured for various wall temperatures. Both parameters increased almost linearly with decreasing wall temperature, but eventually leveled off beyond a certain substrate temperature. The rate of ice formation on the substrate was significantly higher than the growth rate of free ice dendrites, implying that multiple nucleation sites were present.

Test of Fibre Bragg Gratings samples under High Fast Neutrons Fluence

NASA Astrophysics Data System (ADS)

Cheymol, G.; Remy, L.; Gusarov, A.; Kinet, D.; Mégret, P.; Laffont, G.; Blanchet, T.; Morana, A.; Marin, E.; Girard, S.

2018-01-01

Optical fibre sensors (OFS) are worthy of interest for measurements in nuclear reactor thanks to their unique features, particularly compact size and remote multi-point sensing for some of them. But besides non negligible constraints associated with the high temperature environment of the experiments of interest, it is well known that the performances of OFS can be severely affected by high level of radiations. The Radiation Induced Attenuation (RIA) in the fibre is probably most known effect, which can be to some extent circumvented by using rad hard fibres to limit the dynamic loss. However, when the fast neutron fluence reaches 1018 to 1019 n/cm2, the density and index variations associated to structural changes may deteriorate drastically the performances of OFS even if they are based on rad hard fibres, by causing direct errors in the measurements of temperature and/or strain changes. The aim of the present study is to access the effect of nuclear radiations on the Fabry Perot (FP) and of Fibre Bragg Grating (FBG) sensors through the comparison of measurements made on these OFS - or part of them - before and after irradiation [1]. In the context of development of OFS for high irradiation environment and especially for Material Testing Reactors (MTRs), Sake 2 experiment consists in an irradiation campaign at high level of gamma and neutron fluxes conducted on samples of fibre optics - bare or functionalised with FBG. The irradiation was performed at two levels of fast neutron fluence: 1 and 3.1019 n/cm2 (E>1MeV), at 250°± 25°C, in the SCK•CEN BR2 reactor (Mol Belgium). An irradiation capsule was designed to allow irradiation at the specified temperature without active control. The neutron fluence was measured with activation dosimeters and the results were compared with MCPN computations. Investigation of bare samples gives information on the density changes, while for the FBGs both density and refractive index perturbation are involved. Some results for bare fibres were reported recently. In this paper, we will focus on the measurements made on FBGs that have been manufactured by different laboratories on SMF 28 fibers: CEA, University of St-Etienne and University of Mons. Tested gratings have been written using various conditions (type of fibre, of laser, writing wavelength, power density, post writing thermal annealing,…), leading to various behaviours after Sake 2 irradiation. Bragg wavelength and reflectivity have been measured before and after irradiation thanks to a special mounting at the same temperature. It appears that a change in the shape after irradiation of the Bragg peak disturb the retrieval of the Bragg wavelength. The measurements show that for nearly all gratings the Bragg peak remains visible after the irradiation, and that Radiation Induced Bragg Wavelength Shifts (RI-BWSs) vary from few pm (equivalent to an error of less than 1°C for a temperature sensor) to nearly 1 nm (equivalent to 100°C) depending of the FBG types. High RI-BWSs could indeed be expected when considering the huge refractive index variation and compaction of the bare fibre samples that have been measured by other techniques. Post writing thermal annealing is confirmed as a key parameter in order to obtain a more radiation tolerant FBG. Our results show that specific annealing regimes allow making FGBs suitable to perform temperature measurements in a MTR experiment.

Method for single crystal growth of photovoltaic perovskite material and devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jinsong; Dong, Qingfeng

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Structure and magnetic properties of Co2FeSi film deposited on Si/SiO2 substrate with Cr buffer layer

NASA Astrophysics Data System (ADS)

Chatterjee, Payel; Basumatary, Himalay; Raja, M. Manivel

2018-05-01

Co2FeSi thin films of 25 nm thickness with 50 nm thick Cr buffer layer was deposited on thermally oxidized Si substrates. Structural and magnetic properties of the films were studied as a function of annealing temperature and substrate temperatures. While the coercivity increases with increase in annealing temperature, it is found to decrease with increase in substrate temperature. A minimum coercivity of 18 Oe has been obtained for the film deposited at 550°C substrate temperature. This was attributed to the formation of L12 phase as observed from the GIXRD studies. The films with a good combination of soft magnetic properties and L21 crystal structure are suitable for spintronic applications.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Addressing Research and Development Gaps for Plasma-Material Interactions with Linear Plasma Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, Juergen

Plasma-material interactions in future fusion reactors have been identified as a knowledge gap to be dealt with before any next step device past ITER can be built. The challenges are manifold. They are related to power dissipation so that the heat fluxes to the plasma-facing components can be kept at technologically feasible levels; maximization of the lifetime of divertor plasma-facing components that allow for steadystate operation in a reactor to reach the neutron fluence required; the tritium inventory (storage) in the plasma-facing components, which can lead to potential safety concerns and reduction in the fuel efficiency; and it is relatedmore » to the technology of the plasma-facing components itself, which should demonstrate structural integrity under the high temperatures and high neutron fluence. While the dissipation of power exhaust can and should be addressed in high power toroidal devices, the interaction of the plasma with the materials can be best addressed in dedicated linear devices due to their cost effectiveness and ability to address urgent research and development gaps more timely. However, new linear plasma devices are needed to investigate the PMI under fusion reactor conditions and test novel plasma-facing components. Existing linear devices are limited either in their flux, their reactor-relevant plasma transport regimes in front of the target, their fluence, or their ability to test material samples a priori exposed to high neutron fluence. The proposed Material Plasma Exposure eXperiment (MPEX) is meant to address those deficiencies and will be designed to fulfill the fusion reactor-relevant plasma parameters as well as the ability to expose a priori neutron activated materials to plasmas.« less

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Dielectric strength of irradiated fiber reinforced plastics

NASA Astrophysics Data System (ADS)

Humer, Karl; Weber, Harald W.; Hastik, Ronald; Hauser, Hans; Gerstenberg, Heiko

2001-05-01

The insulation system for the toroidal field model coil of international thermonuclear experimental reactor is a fiber reinforced plastic (FRP) laminate, which consists of a combined Kapton/R-glass-fiber reinforcement tape, vacuum-impregnated with an epoxy DGEBA system. Pure disk-shaped laminates, disk-shaped FRP/stainless-steel sandwiches, and conductor insulation prototypes were irradiated at 5 K in a fission reactor up to a fast neutron fluence of 10 22 m -2 ( E>0.1 MeV) to investigate the radiation induced degradation of the dielectric strength of the insulation system. After warm-up to room temperature, swelling, weight loss, and the breakdown strength were measured at 77 K. The sandwich swells by 4% at a fluence of 5×10 21 m -2 and by 9% at 1×10 22 m -2. The weight loss of the FRP is 2% at 1×10 22 m -2. The dielectric strength remained unchanged over the whole dose range.

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Photoinduced ultrafast charge-order melting: Charge-order inversion and nonthermal effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Veenendaal, Michel

2016-09-01

The effect of photoexcitation is studied for a system with checkerboard charge order induced by displacements of ligands around a metal site. The motion of the ligands is treated classically and the electronic charges are simplified to two-level molecular bond charges. The calculations are done for a checkerboard charge-ordered system with about 100 000 ligand oscillators coupled to a fixed-temperature bath. The initial photoexcitation is followed by a rapid decrease in the charge-order parameter within 50–100 femtoseconds while leaving the correlation length almost unchanged. Depending on the fluence, a complete melting of the charge order occurs in less than amore » picosecond. While for low fluences, the system returns to its original state, for full melting, it recovers to its broken-symmetry state leading to an inversion of the charge order. For small long-range interactions, recovery can be slow due to domain formation.« less

Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Weilin; Jiao, Liang; Wang, Haiyan

2011-12-01

Response to irradiation of nanocrystalline 3C-SiC is studied using 2 MeV Au+ ions near the critical temperature for amorphization and is compared to the behavior of its monocrystalline counterpart under the identical irradiation conditions. The irradiated samples have been characterized using in-situ ion channeling, ex-situ x-ray diffraction, and helium ion microscopy. Compared to monocrystalline 3C-SiC, a faster amorphization process in the nanocrystalline material (average grain size = 3.3 nm) is observed at 500 K. However, the nanograin grows with increasing ion fluence at 550 K and the grain size tends to saturate at high fluences. The striking contrast demonstrates amore » sharp transition from irradiation-induced interface-driven amorphization at 500 K to crystallization at 550 K. The results could show potential impacts of nanocrystalline SiC on nuclear fuel cladding and structural components of next-generation nuclear energy systems.« less

Effect of He implantation on the microstructure of zircaloy-4 studied using in situ TEM

NASA Astrophysics Data System (ADS)

Tunes, M. A.; Harrison, R. W.; Greaves, G.; Hinks, J. A.; Donnelly, S. E.

2017-09-01

Zirconium alloys are of great importance to the nuclear industry as they have been widely used as cladding materials in light-water reactors since the 1960s. This work examines the behaviour of these alloys under He ion implantation for the purposes of developing understanding of the fundamental processes behind their response to irradiation. Characterization of zircaloy-4 samples using TEM with in situ 6 keV He irradiation up to a fluence of 2.7 ×1017ions ·cm-2 in the temperature range of 298 to 1148 K has been performed. Ordered arrays of He bubbles were observed at 473 and 1148 K at a fluence of 1.7 ×1017ions ·cm-2 in αZr, the hexagonal compact (HCP) and in βZr, the body centred cubic (BCC) phases, respectively. In addition, the dissolution behaviour of cubic Zr hydrides under He irradiation has been investigated.

Photoinduced ultrafast charge-order melting: Charge-order inversion and nonthermal effects

DOE PAGES

van Veenendaal, Michel

2016-09-01

The effect of photoexcitation is studied for a system with checkerboard charge order induced by displacements of ligands around a metal site. The motion of the ligands is treated classically and the electronic charges are simplified to two-level molecular bond charges. The calculations are done for a checkerboard charge-ordered system with about 100 000 ligand oscillators coupled to a fixed-temperature bath. The initial photoexcitation is followed by a rapid decrease in the charge-order parameter within 50–100 femtoseconds while leaving the correlation length almost unchanged. Depending on the fluence, a complete melting of the charge order occurs in less than amore » picosecond. While for low fluences, the system returns to its original state, for full melting, it recovers to its broken-symmetry state leading to an inversion of the charge order. Finally, for small long-range interactions, recovery can be slow due to domain formation.« less

Electrically active defects in p-type silicon after alpha-particle irradiation

NASA Astrophysics Data System (ADS)

Danga, Helga T.; Auret, F. Danie; Tunhuma, Shandirai M.; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter E.

2018-04-01

In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm-2 s-1 at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1×1010 cm-2, the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (Ci) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

On mechanism of explosive boiling in nanosecond regime

NASA Astrophysics Data System (ADS)

Çelen, Serap

2016-06-01

Today laser-based machining is used to manufacture vital parts for biomedical, aviation and aerospace industries. The aim of the paper is to report theoretical, numerical and experimental investigations of explosive boiling under nanosecond pulsed ytterbium fiber laser irradiation. Experiments were performed in an effective peak power density range between 1397 and 1450 MW/cm2 on pure titanium specimens. The threshold laser fluence for phase explosion, the pressure and temperature at the target surface and the velocity of the expulsed material were reported. A narrow transition zone was realized between the normal vaporization and phase explosion fields. The proof of heterogeneous boiling was given with detailed micrographs. A novel thermal model was proposed for laser-induced splashing at high fluences. Packaging factor and scattering arc radius terms were proposed to state the level of the melt ejection process. Results of the present investigation explain the explosive boiling during high-power laser interaction with metal.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

1998-02-03

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

A study of the effect of gamma and laser irradiation on the thermal, optical and structural properties of CR-39 nuclear track detector

NASA Astrophysics Data System (ADS)

Nouh, S. A.; Atta, M. R.; El-Melleegy, W. M.

2004-08-01

A comparative study of the effect of gamma and laser irradiation on the thermal, optical and structural properties of the CR-39 diglycol carbonate solid state nuclear track detector has been carried out. Samples from CR-39 polymer were classified into two main groups: the first group was irradiated by gamma rays with doses at levels between 20 and 300 kGy, whereas the second group was exposed to infrared laser radiation with energy fluences at levels between 0.71 and 8.53 J/cm(2). Non-isothermal studies were carried out using thermogravimetry, differential thermogravimetry and differential thermal analysis to obtain activation energy of decomposition and transition temperatures for the non-irradiated and all irradiated CR-39 samples. In addition, optical and structural property studies were performed on non-irradiated and irradiated CR-39 samples using refractive index and X-ray diffraction measurements. Variation in the onset temperature of decomposition T-o, activation energy of decomposition E-a, melting temperature T-m, refractive index n and the mass fraction of the amorphous phase after gamma and laser irradiation were studied. It was found that many changes in the thermal, optical and structural properties of the CR-39 polymer could be produced by gamma irradiation via degradation and cross-linking mechanisms. Also, the gamma dose has an advantage of increasing the correlation between thermal stability of the CR-39 polymer and bond formation created by the ionizing effect of gamma radiation. On the other hand, higher laser-energy fluences in the range 4.27-8.53 J/cm(2) decrease the melting temperature of the CR-39 polymer and this is most suitable for applications requiring molding of the polymer at lower temperatures.

Method for wetting a boron alloy to graphite

DOEpatents

Storms, E.K.

1987-08-21

A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

Dependence of the phototropic response of Arabidopsis thaliana on fluence rate and wavelength

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konjevic, R.; Steinitz, B.; Poff, K.L.

1989-12-01

In the phototropic response of Arabidopsis thaliana seedlings, the shape of the fluence-response relation depends on fluence rate and wavelength. At low fluence rates, the response to 450-nm light is characterized by a single maximum at about 0.3 {mu}mol{center dot}m{sup {minus}2}. At higher fluence rates, the response shows two distinct maxima, I and II, at 0.3 and 3.5 {mu}mol{center dot}m{sup {minus}2}, respectively. The response to 500-nm light shows a single maximum at 2 {mu}mol{center dot}m{sup {minus}2}, and the response to 510-nm light shows a single maximum at 4.5 {mu}mol{center dot}m{sup {minus}2}, independent of fluence rate. The response to 490-nm lightmore » shows a maximal at 4.5 {mu}mol{center dot}m{sup {minus}2} and a shoulder at about 0.6 {mu}mol{center dot}m{sup {minus}2}. Preirradiation with high-fluence 510-nm light from above, immediately followed by unilateral 450-nm light, eliminates maximum II but not maximum I. Preirradiation with high-fluence 450-nm light from above eliminates the response to subsequent unilateral irradiation with either 450-nm or 510-nm light. The recovery of the response following high-fluence 450-nm light is considerably slower than the recovery following high-fluence 510-nm light. Unilateral irradiation with low-fluence 510-nm light followed by 450-nm light results in curvature that is approximately the sum of those produced by either irradiation alone. Based on these results, it is proposed that phototropism in A. thaliana seedlings is mediated by at least two blue-light photoreceptor pigments.« less

Preliminary Low Temperature Electron Irradiation of Triple Junction Solar Cells

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

2007-01-01

For many years extending solar power missions far from the sun has been a challenge not only due to the rapid falloff in solar intensity (intensity varies as inverse square of solar distance) but also because some of the solar cells in an array may exhibit a LILT (low intensity low temperature) degradation that reduces array performance. Recent LILT tests performed on commercial triple junction solar cells have shown that high performance can be obtained at solar distances as great as approx. 5 AU1. As a result, their use for missions going far from the sun has become very attractive. One additional question that remains is whether the radiation damage experienced by solar cells under low temperature conditions will be more severe than when measured during room temperature radiation tests where thermal annealing may take place. This is especially pertinent to missions such as the New Frontiers mission Juno, which will experience cell irradiation from the trapped electron environment at Jupiter. Recent testing2 has shown that low temperature proton irradiation (10 MeV) produces cell degradation results similar to room temperature irradiations and that thermal annealing does not play a factor. Although it is suggestive to propose the same would be observed for low temperature electron irradiations, this has not been verified. JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature. A fluence of 1E15 1MeV electrons was selected as representative of a moderately high dose that might be expected for a solar powered mission. Fluences much greater than this would require large increases in array area and mass, compromising the ability of PV to compete with non-solar alternatives.

Comprehensive studies of ultrashort laser pulse ablation of tin target at terawatt power

NASA Astrophysics Data System (ADS)

Elsied, Ahmed M.; Diwakar, Prasoon K.; Hassanein, Ahmed

2018-01-01

The fundamental properties of ultrashort laser interactions with metals using up to terawatt power were comprehensively studied, i.e., specifically mass ablation, nanoparticle formation, and ion dynamics using multitude of diagnostic techniques. Results of this study can be useful in many fields of research including spectroscopy, micromachining, thin film fabrication, particle acceleration, physics of warm dense matter, and equation-of-state determination. A Ti:Sapphire femtosecond laser system (110 mJ maximum energy, 40 fs, 800 nm, P-polarized, single pulse mode) was used, which delivered up to 3 terawatt laser power to ablate 1 mm tin film in vacuum. The experimental analysis includes the effect of the incident laser fluence on the ablated mass, size of the ablated area, and depth of ablation using white light profilometer. Atomic force microscope was used to measure the emitted particles size distribution at different laser fluence. Faraday cup (FC) detector was used to analyze the emitted ions flux by measuring the velocity, and the total charge of the emitted ions. The study shows that the size of emitted particles follows log-normal distribution with peak shifts depending on incident laser fluence. The size of the ablated particles ranges from 20 to 80 nm. The nanoparticles deposited on the wafer tend to aggregate and to be denser as the incident laser fluence increases as shown by AFM images. Laser ablation depth was found to increase logarithmically with laser fluence then leveling off at laser fluence > 400 J/cm2. The total ablated mass tends to increase logarithmically with laser fluence up to 60 J/cm2 while, increases gradually at higher fluence due to the increase in the ablated area. The measured ion emitted flux shows a linear dependence on laser fluence with two distinct regimes. Strong dependence on laser fluence was observed at fluences < 350 J/cm2. Also, a slight enhancement in ion velocity was observed with increasing laser fluence up to 350 J/cm2.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15 films

NASA Astrophysics Data System (ADS)

Sekhar, M. Chandra; Uthanna, S.; Martins, R.; Jagadeesh Chandra, S. V.; Elangovan, E.

2012-04-01

Thin films of (Ta2O5)0.85(TiO2)0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (Ts) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures >= 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta2O5)0.85(TiO2)0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta2O5)0.85(TiO2)0.15/Si. A low leakage current of 7.7 × 10-5 A/cm2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10-8 A/cm2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta2O5)0.85(TiO2)0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (Eg) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature.

Proton Particle Test Fluence: What's the Right Number?

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Raymond

2015-01-01

While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.

Particle Test Fluence: What's the Right Number?

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2014-01-01

While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.

Surface morphology and subsurface damaged layer of various glasses machined by 193-nm ArF excimer laser

NASA Astrophysics Data System (ADS)

Liao, Yunn-shiuan; Chen, Ying-Tung; Chao, Choung-Lii; Liu, Yih-Ming

2005-01-01

Owing to the high bonding energy, most of the glasses are removed by photo-thermal rather than photo-chemical effect when they are ablated by the 193 or 248nm excimer lasers. Typically, the machined surface is covered by re-deposited debris and the sub-surface, sometimes surface as well, is scattered with micro-cracks introduced by thermal stress generated during the process. This study aimed to investigate the nature and extent of the surface morphology and sub-surface damaged (SSD) layer induced by the laser ablation. The effects of laser parameters such as fluence, shot number and repetition rate on the morphology and SSD were discussed. An ArF excimer laser (193 nm) was used in the present study to machine glasses such as soda-lime, Zerodur and BK-7. It is found that the melt ejection and debris deposition tend to pile up higher and become denser in structure under a higher energy density, repetition rate and shot number. There are thermal stress induced lateral cracks when the debris covered top layer is etched away. Higher fluence and repetition rate tend to generate more lateral and median cracks which propagate into the substrate. The changes of mechanical properties of the SSD layer were also investigated.

GaP betavoltaic cells as a power source

NASA Technical Reports Server (NTRS)

Pool, F. S.; Stella, Paul M.; Anspaugh, B.

1991-01-01

Maximum power output for the GaP cells of this study was found to be on the order of 1 microW. This resulted from exposure to 200 and 40 KeV electrons at a flux of 2 x 10(exp 9) electrons/sq cm/s, equivalent to a 54 mCurie source. The efficiencies of the cells ranged from 5 to 9 percent for 200 and 40 KeV electrons respectively. The lower efficiency at higher energy is due to a substantial fraction of energy deposition in the substrate, further than a diffusion length from the depletion region of the cell. Radiation damage was clearly observed in GaP after exposure to 200 KeV electrons at a fluence of 2 x 10(exp 12) electrons/sq cm. No discernable damage was observed after exposure to 40 KeV electrons at the same fluence. Analysis indicates that a GaP betavoltaic system would not be practical if limited to low energy beta sources. The power available would be too low even in the ideal case. By utilizing high activity beta sources, such as Sr-90/Y-90, it may be possible to achieve performance that could be suitable for some space power applications. However, to utilize such a source the problem of radiation damage in the beta cell material must be overcome.

Energy absorption behavior of polyurea coatings under laser-induced dynamic tensile and mixed-mode loading

NASA Astrophysics Data System (ADS)

Jajam, Kailash; Lee, Jaejun; Sottos, Nancy

2015-06-01

Energy absorbing, lightweight, thin transparent layers/coatings are desirable in many civilian and military applications such as hurricane resistant windows, personnel face-shields, helmet liners, aircraft canopies, laser shields, blast-tolerant sandwich structures, sound and vibration damping materials to name a few. Polyurea, a class of segmented block copolymer, has attracted recent attention for its energy absorbing properties. However, most of the dynamic property characterization of polyurea is limited to tensile and split-Hopkinson-pressure-bar compression loading experiments with strain rates on the order of 102 and 104 s-1, respectively. In the present work, we report the energy absorption behavior of polyurea thin films (1 to 2 μm) subjected to laser-induced dynamic tensile and mixed-mode loading. The laser-generated high amplitude stress wave propagates through the film in short time frames (15 to 20 ns) leading to very high strain rates (107 to 108 s-1) . The substrate stress, surface velocity and fluence histories are inferred from the displacement fringe data. On comparing input and output fluences, test results indicate significant energy absorption by the polyurea films under both tensile and mixed-mode loading conditions. Microscopic examination reveals distinct changes in failure mechanisms under mixed-mode loading from that observed under pure tensile loading. Office of Naval Research MURI.

A HiPIMS plasma source with a magnetic nozzle that accelerates ions: application in a thruster

NASA Astrophysics Data System (ADS)

Bathgate, Stephen N.; Ganesan, Rajesh; Bilek, Marcela M. M.; McKenzie, David R.

2017-01-01

We demonstrate a solid fuel electrodeless ion thruster that uses a magnetic nozzle to collimate and accelerate copper ions produced by a high power impulse magnetron sputtering discharge (HiPIMS). The discharge is initiated using argon gas but in a practical device the consumption of argon could be minimised by exploiting the self-sputtering of copper. The ion fluence produced by the HiPIMS discharge was measured with a retarding field energy analyzer (RFEA) as a function of the magnetic field strength of the nozzle. The ion fraction of the copper was determined from the deposition rate of copper as a function of substrate bias and was found to exceed 87%. The ion fluence and ion energy increased in proportion with the magnetic field of the nozzle and the energy of the ions was found to follow a Maxwell-Boltzmann distribution with a directed velocity. The effectiveness of the magnetic nozzle in converting the randomized thermal motion of the ions into a jet was demonstrated from the energy distribution of the ions. The maximum ion exhaust velocity of at least 15.1 km/s, equivalent to a specific impulse of 1543 s was measured which is comparable to existing Hall thrusters and exceeds that of Teflon pulsed plasma thrusters.

Paper un-printing: using lasers to remove toner-print in order to reuse office paper

NASA Astrophysics Data System (ADS)

Leal-Ayala, D. R.; Allwood, J. M.; Counsell, T. A. M.

2011-12-01

In this article, lasers in the ultraviolet, visible and infrared light spectra working with pulse widths in the nanosecond range are applied to a range of toner-paper combinations to determine their ability to remove toner. If the laser energy fluence can be chosen to stay below the ablation threshold of paper at the same time that it surpasses that of toner, paper could be cleaned and re-used instead of being recycled or disposed into a landfill. This could significantly reduce the environmental impact of paper production and use. Although there are a variety of paper conservation studies which have investigated the effects of laser radiation on blank and soiled paper, none has previously explored toner-print removal from paper by laser ablation. Colour analysis under the L ∗ a ∗ b ∗ colour space and SEM examination of the outcome indicate that it is possible to remove toner from paper without damaging and discolouring the substrate. Best results are obtained when employing visible radiation at a wavelength of 532 nm working with a pulse width of 4 ns and energy fluences under 1.6 J/cm2. This means that it is technically feasible to remove toner-print for paper re-use.

In situ probing of pulsed laser melting and laser-induced periodic surface structures formation by dynamic reflectivity

NASA Astrophysics Data System (ADS)

Huynh, T. T. D.; Semmar, N.

2017-09-01

The melting process and nanostructure formation induced by nanosecond and picosecond laser pulses on bulk silicon and copper thin film were studied by ex situ analysis and in situ real time reflectivity. Three different probing wavelengths (633, 473 and 326 nm) were used during the pump laser processing and were correlated to the beam parameters (pulse duration, laser fluence and number of laser shots) and copper thin film thickness. On a silicon surface using a KrF laser beam (27 ns, 1 Hz, 248 nm), the melting threshold was determined close to 700 mJ cm-2 and the melting duration increased from 10 to 130 ns as the fluence increased from 700 to 1750 mJ cm-2. Nanostructures with a spatial period close to the laser wavelength were formed on both copper thin film and silicon substrate after nanosecond Nd:YAG laser (10 ns, 266 nm, 1 Hz) irradiation. In the picosecond regime, using an Nd:YAG laser (40 ps, 266 nm, 1 Hz), different nanostructures, from spikes to laser-induced periodic surface structures, were formed on 500 nm copper thin film and were analyzed with respect to the drop in dynamic reflectivity changes versus the number of laser shots.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1985-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1984-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

2017-12-01

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

The role of optical rectification in the generation of terahertz radiation from GaBiAs

NASA Astrophysics Data System (ADS)

Radhanpura, K.; Hargreaves, S.; Lewis, R. A.; Henini, M.

2009-06-01

We report on a detailed study of the emission of terahertz-frequency electromagnetic radiation from layers of GaBiyAs1-y (0≤y<0.04) grown by molecular beam epitaxy on (311)B and (001) GaAs substrates. We measure two orthogonally polarized components of the terahertz radiation emitted under excitation by ultrashort near-infrared laser pulses in both transmission and reflection geometries as a function of the crystal rotation about its surface normal as well as the effect of in-plane magnetic field and pump fluence on the terahertz emission. We conclude that the principal mechanism for terahertz generation is via optical rectification rather than transient currents.

Radiation Hardened Silicon-on-Insulator Structures with N+ Ion Modified Buried SiO2 Layer

NASA Astrophysics Data System (ADS)

Tyschenko, I. E.; Popov, V. P.

2009-12-01

Radiation-resistant silicon-on-insulator structures were produced by N+ ion implantation into thermally grown SiO2 film and subsequent hydrogen transfer of the Si layer to the nitrogen-implanted substrate under conditions of vacuum wafer bonding. Accumulation of the carriers in the buried SiO2 was investigated as a function of fluence of nitrogen ions in the range (1-6)×1015 cm2 and as a function of total radiation dose ranging from 104 to 107 rad (Si). It was found that the charge generated near the nitrided bonding interface was reduced by a factor of four compared to the thermal SiO2/Si interface.

Rust and paint stripping from power transmission towers with a pulsed Nd:YAG laser

NASA Astrophysics Data System (ADS)

Ashidate, Shu-ichi; Obara, Minoru

1997-04-01

The possibility of the rust and paint removal from the power transmission towers was investigated with the pulsed Nd:YAG laser for the first time. The red rust and paint were successfully removed without damaging underlying Zn(zinc) galvanized steel substrates. The optimum irradiated laser fluence for the red rust was found from 0.3 J/cm2 to 0.4 J/cm2 for 9 ns short pulses, from 1.0 J/cm2 to 4.4 J/cm2 for 200 ns long pulses, respectively. For the paint stripping the optimum ranged from 3.3 J/cm2 to 4.4 J/cm2 with the pulse width of 200 ns.

Effects of proton irradiation on thin-film materials for optical filters

NASA Astrophysics Data System (ADS)

Scaglione, Salvatore; Piegari, Angela; Sytchkova, Anna; Jakšić, Milko

2017-11-01

The behaviour of interference optical filters for space applications has been investigated under low energy proton irradiation. In order to understand the behaviour of the interference coating subjected to proton irradiation, the interaction of protons with coating and substrate was simulated by the SRIM code. A beam of protons of 60 KeV with an integrated fluence of 1013 p+/cm2 was used. The spectral transmittances of fused silica, TiO2 and HfO2 single layers and interference coatings were measured before and after irradiation and, according to simulations, no significant effects were detected in the visible-near infrared spectrum, while some variations appeared at shorter wavelengths.

Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

USDA-ARS?s Scientific Manuscript database

Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

Experimental evaluation of dual multiple aperture devices for fluence field modulated x-ray computed tomography

NASA Astrophysics Data System (ADS)

Mathews, A. J.; Gang, G.; Levinson, R.; Zbijewski, W.; Kawamoto, S.; Siewerdsen, J. H.; Stayman, J. W.

2017-03-01

Acquisition of CT images with comparable diagnostic power can potentially be achieved with lower radiation exposure than the current standard of care through the adoption of hardware-based fluence-field modulation (e.g. dynamic bowtie filters). While modern CT scanners employ elements such as static bowtie filters and tube-current modulation, such solutions are limited in the fluence patterns that they can achieve, and thus are limited in their ability to adapt to broad classes of patient morphology. Fluence-field modulation also enables new applications such as region-of-interest imaging, task specific imaging, reducing measurement noise or improving image quality. The work presented in this paper leverages a novel fluence modulation strategy that uses "Multiple Aperture Devices" (MADs) which are, in essence, binary filters, blocking or passing x-rays on a fine scale. Utilizing two MAD devices in series provides the capability of generating a large number of fluence patterns via small relative motions between the MAD filters. We present the first experimental evaluation of fluence-field modulation using a dual-MAD system, and demonstrate the efficacy of this technique with a characterization of achievable fluence patterns and an investigation of experimental projection data.

Desensitization and recovery of phototropic responsiveness in Arabidopsis thaliana

NASA Technical Reports Server (NTRS)

Janoudi, A. K.; Poff, K. L.

1993-01-01

Phototropism is induced by blue light, which also induces desensitization, a partial or total loss of phototropic responsiveness. The fluence and fluence-rate dependence of desensitization and recovery from desensitization have been measured for etiolated and red light (669-nm) preirradiated Arabidopsis thaliana seedlings. The extent of desensitization increased as the fluence of the desensitizing 450-nm light was increased from 0.3 to 60 micromoles m-2 s-1. At equal fluences, blue light caused more desensitization when given at a fluence rate of 1.0 micromole m-2 s-1 than at 0.3 micromole m-2 s-1. In addition, seedlings irradiated with blue light at the higher fluence rate required a longer recovery time than seedlings irradiated at the lower fluence rate. A red light preirradiation, probably mediated via phytochrome, decreased the time required for recovery from desensitization. The minimum time for detectable recovery was about 65 s, and the maximum time observed was about 10 min. It is proposed that the descending arm of the fluence-response relationship for first positive phototropism is a consequence of desensitization, and that the time threshold for second positive phototropism establishes a period during which recovery from desensitization occurs.

ITER structural design criteria and their extension to advanced reactor blankets*1

NASA Astrophysics Data System (ADS)

Majumdar, S.; Kalinin, G.

2000-12-01

Applications of the recent ITER structural design criteria (ISDC) are illustrated by two components. First, the low-temperature-design rules are applied to copper alloys that are particularly prone to irradiation embrittlement at relatively low fluences at certain temperatures. Allowable stresses are derived and the impact of the embrittlement on allowable surface heat flux of a simple first-wall/limiter design is demonstrated. Next, the high-temperature-design rules of ISDC are applied to evaporation of lithium and vapor extraction (EVOLVE), a blanket design concept currently being investigated under the US Advanced Power Extraction (APEX) program. A single tungsten first-wall tube is considered for thermal and stress analyses by finite-element method.

Antibacterial characteristics of thermal plasma spray system.

PubMed

Goudarzi, M; Saviz, Sh; Ghoranneviss, M; Salar Elahi, A

2018-03-15

The objective of this study is to investigate antibacterial characteristics of a thermal plasma spray system. For this purpose, copper powder was coated on a handmade atmospheric plasma spraying system made by the stainless steel 316 substrate, which is preheated at different temperatures before spraying. A number of deposition characteristics such as antibacterial characteristics, adhesion strength and hardness of coating, was investigated. All of the spray parameters are fixed except the substrate temperature. The chemical composition was analyzed by X-ray diffraction (XRD). A scanning electron microscopy (SEM) and back scattering electron microscopy (BSE) were used to show the coating microstructure, its thickness and also the powder micrograph. The energy dispersive X-ray spectroscopy (EDX) was used to analyze the coating particles. Hardness of the deposition was examined by Vickers tester (HV0.1). Its adhesion strength was declared by cross cut tester (TQC). In addition, the percentage of bactericidal coating was evidenced with Staphylococcus aurous and Escherichia coli bacteria. Study results show that as the substrates temperature increases, the number of splats in the shape of pancake increases, the greatness and percentage of the deposition porosity both decrease. The increment of the substrate temperature leads to more oxidation and makes thicker dendrites on the splat. The enhancement of the substrate temperature also enlarges thickness and efficiency of coating. The interesting results are that antibacterial properties of coatings against the Escherichia coli are more than Staphylococcus aurous bacteria. However the bactericidal percentage of the coatings against Staphylococcus aurous and Escherichia coli bacteria roughly does not change with increasing the substrate temperature. Furthermore, by increment of the substrate temperature, coatings with both high adhesion and hardness are obtained. Accordingly, the temperature of substrate can be an important parameter for progressing mechanical properties of the antiseptic deposition.

Deposition of tantalum carbide coatings on graphite by laser interactions

NASA Technical Reports Server (NTRS)

Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

1994-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

Motor-substrate interactions in mycoplasma motility explains non-Arrhenius temperature dependence.

PubMed

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-12-02

Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by approximately 400 "leg" proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10-40 degrees C. This corresponds to an Arrhenius factor that decreases from approximately 45 k(B)T at 10 degrees C to approximately 10 k(B)T at 40 degrees C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction.

Motor-Substrate Interactions in Mycoplasma Motility Explains Non-Arrhenius Temperature Dependence

PubMed Central

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-01-01

Abstract Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by ∼400 “leg” proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10–40°C. This corresponds to an Arrhenius factor that decreases from ∼45 kBT at 10°C to ∼10 kBT at 40°C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction. PMID:19948122

Selective femtosecond laser structuring of dielectric thin films with different band gaps: a time-resolved study of ablation mechanisms

NASA Astrophysics Data System (ADS)

Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2016-12-01

Ultrashort pulse lasers have been increasingly gaining importance for the selective structuring of dielectric thin films in industrial applications. In a variety of works the ablation of thin SiO2 and SiNx films from Si substrates has been investigated with near infrared laser wavelengths with photon energies of about 1.2 eV where both dielectrics are transparent (E_{{gap,SiO2}}≈ 8 eV; E_{{gap,SiN}x}≈ 2.5 eV). In these works it was found that few 100 nm thick SiO2 films are selectively ablated with a "lift-off" initiated by confined laser ablation whereas the SiN_{{x}} films are ablated by a combination of confined and direct laser ablation. In the work at hand, ultrafast pump-probe imaging was applied to compare the laser ablation dynamics of the two thin film systems directly with the uncoated Si substrate—on the same setup and under identical parameters. On the SiO2 sample, results show the pulse absorption in the Si substrate, leading to the confined ablation of the SiO2 layer by the expansion of the substrate. On the SiN_{{x}} sample, direct absorption in the layer is observed leading to its removal by evaporation. The pump-probe measurements combined with reflectivity corrected threshold fluence investigations suggest that melting of the Si substrate is sufficient to initiate the lift-off of an overlaying transparent film—evaporation of the substrate seems not to be necessary.

Microstructural studies by TEM of diamond films grown by combustion flame

NASA Astrophysics Data System (ADS)

Ma, G.-H. M.; Hirose, Y.; Amanuma, S.; McClure, M.; Prater, J. T.; Glass, J. T.

Microstructures of diamond films grown in an oxygen-acetylene combustion flame were studied by TEM. The O2/C2H2 gas ratio was fixed and the substrate materials and temperature were varied. High quality diamond films were grown by this method at high growth rates of about 30 micron/hr. A rough surface and high density of secondary nucleation sites and microtwins were observed in the diamond grains grown on molybdenum (Mo) at a substrate temperature of 500 C. When the substrate temperature wass raised to between 500 and 870 C, the defect density was greatly reduced, revealing a low density of stacking faults and dislocations. Diamond films grown on Si substrates did not show the same substrate temperature dependence on defect density, at least not over the same temperature range. However, the same correlation between defect density, secondary nucleation, and surface morphology was observed.

Femtosecond laser melting of silver nanoparticles: comparison of model simulations and experimental results

NASA Astrophysics Data System (ADS)

Cheng, Chung-Wei; Chang, Chin-Lun; Chen, Jinn-Kuen; Wang, Ben

2018-05-01

Ultrafast laser-induced melting of silver nanoparticles (NPs) using a femtosecond laser pulse is investigated both theoretically and experimentally. The sintered Ag structure fabricated from printed Ag NP ink using femtosecond laser (1064 nm, 300 fs) irradiation is experimentally studied. A two-temperature model with dynamic optical properties and particle size effects on the melting temperature of Ag NPs is considered. The rapid phase change model is incorporated to simulate the Ag NPs' ultrafast laser-induced melting process, and a multi-shot melting threshold fluence predicted from the simulated single-shot melting threshold is developed.

Neutron-transmutation-doped germanium bolometers

NASA Technical Reports Server (NTRS)

Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

1983-01-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Ultrafast electron crystallography of the cooperative reaction path in vanadium dioxide

PubMed Central

Yang, Ding-Shyue; Baum, Peter; Zewail, Ahmed H.

2016-01-01

Time-resolved electron diffraction with atomic-scale spatial and temporal resolution was used to unravel the transformation pathway in the photoinduced structural phase transition of vanadium dioxide. Results from bulk crystals and single-crystalline thin-films reveal a common, stepwise mechanism: First, there is a femtosecond V−V bond dilation within 300 fs, second, an intracell adjustment in picoseconds and, third, a nanoscale shear motion within tens of picoseconds. Experiments at different ambient temperatures and pump laser fluences reveal a temperature-dependent excitation threshold required to trigger the transitional reaction path of the atomic motions. PMID:27376103

Atomic Oxygen Fluence Monitor

NASA Technical Reports Server (NTRS)

Banks, Bruce A.

2011-01-01

This innovation enables a means for actively measuring atomic oxygen fluence (accumulated atoms of atomic oxygen per area) that has impinged upon spacecraft surfaces. Telemetered data from the device provides spacecraft designers, researchers, and mission managers with real-time measurement of atomic oxygen fluence, which is useful for prediction of the durability of spacecraft materials and components. The innovation is a compact fluence measuring device that allows in-space measurement and transmittance of measured atomic oxygen fluence as a function of time based on atomic oxygen erosion yields (the erosion yield of a material is the volume of material that is oxidized per incident oxygen atom) of materials that have been measured in low Earth orbit. It has a linear electrical response to atomic oxygen fluence, and is capable of measuring high atomic oxygen fluences (up to >10(exp 22) atoms/sq cm), which are representative of multi-year low-Earth orbital missions (such as the International Space Station). The durability or remaining structural lifetime of solar arrays that consist of polymer blankets on which the solar cells are attached can be predicted if one knows the atomic oxygen fluence that the solar array blanket has been exposed to. In addition, numerous organizations that launch space experiments into low-Earth orbit want to know the accumulated atomic oxygen fluence that their materials or components have been exposed to. The device is based on the erosion yield of pyrolytic graphite. It uses two 12deg inclined wedges of graphite that are over a grit-blasted fused silica window covering a photodiode. As the wedges erode, a greater area of solar illumination reaches the photodiode. A reference photodiode is also used that receives unobstructed solar illumination and is oriented in the same direction as the pyrolytic graphite covered photodiode. The short-circuit current from the photodiodes is measured and either sent to an onboard data logger, or transmitted to a receiving station on Earth. By comparison of the short-circuit currents from the fluence-measuring photodiode and the reference photodiode, one can compute the accumulated atomic oxygen fluence arriving in the direction that the fluence monitor is pointing. The device produces a signal that is linear with atomic oxygen fluence using a material whose atomic oxygen erosion yield has been measured over a period of several years in low-Earth orbit.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Enzymatic mechanisms of soil-carbon response to temperature on Mt. Kilimanjaro

NASA Astrophysics Data System (ADS)

Blagodatskaya, Evgenia; Blagodatskiy, Sergey; Kuzyakov, Yakov

2016-04-01

Short-term acceleration of soil organic matter (SOM) decomposition by increasing temperature contradicts the acclimation observed in long-term studies. We used the unique altitudinal gradient (from colline tropical zone to subalpine zone) on Mt. Kilimanjaro to demonstrate the mechanisms of short- and long-term acclimation of extra- and intracellular enzymes that decompose polymers (cellulose, chitin, phytate) and oxidize monomers (14C-glucose). Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation

Synthesis, characterization and ellipsometric study of ultrasonically sprayed Co3O4 films

NASA Astrophysics Data System (ADS)

Gençyılmaz, O.; Taşköprü, T.; Atay, F.; Akyüz, İ.

2015-10-01

In the present study, cobalt oxide (Co3O4) films were produced using ultrasonic spray pyrolysis technique onto the glass substrate at different temperatures (200-250-300-350 °C). The effect of substrate temperature on the structural, optical, surface and electrical properties of Co3O4 films was reported. Thickness, refractive index and extinction coefficient of the films were determined by spectroscopic ellipsometry, and X-ray diffraction analyses revealed that Co3O4 films were polycrystalline fcc structure and the substrate temperature significantly improved the crystal structure of Co3O4 films. The films deposited at 350 °C substrate temperature showed the best structural quality. Transmittance, absorbance and reflectance spectra were taken by means of UV-Vis spectrophotometer, and optical band gap values were calculated using optical method. Surface images and roughness values of the films were taken by atomic force microscopy to see the effect of deposition temperature on surface properties. The resistivity of the films slightly decreases with increase in the substrate temperature from 1.08 × 104 to 1.46 × 102 Ω cm. Finally, ultrasonic spray pyrolysis technique allowed production of Co3O4 films, which are alternative metal oxide film for technological applications, at low substrate temperature.

Materials International Space Station Experiment-6 (MISSE-6) Atomic Oxygen Fluence Monitor Experiment

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Miller, Sharon K.; Waters, Deborah L.

2010-01-01

An atomic oxygen fluence monitor was flown as part of the Materials International Space Station Experiment-6 (MISSE-6). The monitor was designed to measure the accumulation of atomic oxygen fluence with time as it impinged upon the ram surface of the MISSE 6B Passive Experiment Container (PEC). This was an active experiment for which data was to be stored on a battery-powered data logger for post-flight retrieval and analysis. The atomic oxygen fluence measurement was accomplished by allowing atomic oxygen to erode two opposing wedges of pyrolytic graphite that partially covered a photodiode. As the wedges of pyrolytic graphite erode, the area of the photodiode that is illuminated by the Sun increases. The short circuit current, which is proportional to the area of illumination, was to be measured and recorded as a function of time. The short circuit current from a different photodiode, which was oriented in the same direction and had an unobstructed view of the Sun, was also to be recorded as a reference current. The ratio of the two separate recorded currents should bear a linear relationship with the accumulated atomic oxygen fluence and be independent of the intensity of solar illumination. Ground hyperthermal atomic oxygen exposure facilities were used to evaluate the linearity of the ratio of short circuit current to the atomic oxygen fluence. In flight, the current measurement circuitry failed to operate properly, thus the overall atomic oxygen mission fluence could only be estimated based on the physical erosion of the pyrolytic graphite wedges. The atomic oxygen fluence was calculated based on the knowledge of the space atomic oxygen erosion yield of pyrolytic graphite measured from samples on the MISSE 2. The atomic oxygen fluence monitor, the expected result and comparison of mission atomic oxygen fluence based on the erosion of the pyrolytic graphite and Kapton H atomic oxygen fluence witness samples are presented in this paper.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

SU-F-T-261: Reconstruction of Initial Photon Fluence Based On EPID Images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seliger, T; Engenhart-Cabillic, R; Czarnecki, D

2016-06-15

Purpose: Verifying an algorithm to reconstruct relative initial photon fluence for clinical use. Clinical EPID and CT images were acquired to reconstruct an external photon radiation treatment field. The reconstructed initial photon fluence could be used to verify the treatment or calculate the applied dose to the patient. Methods: The acquired EPID images were corrected for scatter caused by the patient and the EPID with an iterative reconstruction algorithm. The transmitted photon fluence behind the patient was calculated subsequently. Based on the transmitted fluence the initial photon fluence was calculated using a back-projection algorithm which takes the patient geometry andmore » its energy dependent linear attenuation into account. This attenuation was gained from the acquired cone-beam CT or the planning CT by calculating a water-equivalent radiological thickness for each irradiation direction. To verify the algorithm an inhomogeneous phantom consisting of three inhomogeneities was irradiated by a static 6 MV photon field and compared to a reference flood field image. Results: The mean deviation between the reconstructed relative photon fluence for the inhomogeneous phantom and the flood field EPID image was 3% rising up to 7% for off-axis fluence. This was probably caused by the used clinical EPID calibration, which flattens the inhomogeneous fluence profile of the beam. Conclusion: In this clinical experiment the algorithm achieved good results in the center of the field while it showed high deviation of the lateral fluence. This could be reduced by optimizing the EPID calibration, considering the off-axis differential energy response. In further progress this and other aspects of the EPID, eg. field size dependency, CT and dose calibration have to be studied to realize a clinical acceptable accuracy of 2%.« less

Impact of environmental factors on efficacy of upper-room air ultraviolet germicidal irradiation for inactivating airborne mycobacteria.

PubMed

Xu, Peng; Kujundzic, Elmira; Peccia, Jordan; Schafer, Millie P; Moss, Gene; Hernandez, Mark; Miller, Shelly L

2005-12-15

This study evaluated the efficacy of an upper-room air ultraviolet germicidal irradiation (UVGI) system for inactivating airborne bacteria, which irradiates the upper part of a room while minimizing radiation exposure to persons in the lower part of the room. A full-scale test room (87 m3), fitted with a UVGI system consisting of 9 louvered wall and ceiling fixtures (504 W all lamps operating) was operated at 24 and 34 degrees C, between 25 and 90% relative humidity, and at three ventilation rates. Mycobacterium parafortuitum cells were aerosolized into the room such that their numbers and physiologic state were comparable both with and without the UVGI system operating. Airborne bacteria were collected in duplicate using liquid impingers and quantified with direct epifluorescent microscopy and standard culturing assay. Performance of the UVGI system degraded significantly when the relative humidity was increased from 50% to 75-90% RH, the horizontal UV fluence rate distribution was skewed to one side compared to being evenly dispersed, and the room air temperature was stratified from hot at the ceiling to cold at the floor. The inactivation rate increased linearly with effective UV fluence rate up to 5 microW cm(-2); an increase in the fluence rate above this level did not yield a proportional increase in inactivation rate.

A spectroscopic ellispometric study of the tunability of the optical constants and thickness of GeO{sub x} films with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayarangamuthu, K.; Singh, Chaman; Rath, Shyama

2011-09-15

Sub-stoichiometric GeO{sub x} films were fabricated by electron-beam evaporation method. The films were irradiated with 100 MeV Ag{sup 7+} ions at fluences between 1 x 10{sup 12} and 1 x 10{sup 14} ions-cm{sup -2}. Spectroscopic ellipsometric measurements were performed in air at room temperature. The values of the layer thickness and refractive index were extracted from ellipsometry using a multilayer analysis and the Tauc Lorentz model. The refractive index (at 633 nm) of the as-deposited GeO{sub x} film was estimated to be 1.860 and decreased to 1.823 for films irradiated at an ion fluence of 1 x 10{sup 14} ions-cm{supmore » -2}. The thickness of the films also decreased after irradiation and is due to a sputtering induced by the ion beam. The change in the refractive index with ion fluence is attributed to a stoichiometric change and structural transformation represented by GeO{sub x}{yields} Ge + GeO{sub y} (y > x) occurring due to a thermal spike induced by ion irradiation. Swift heavy ions thus provide a scope for modulating the refractive index of GeO{sub x} films. The thickness and stoichiometric changes are supported by Rutherford backscattering measurements.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE PAGES

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2017-11-15

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Bubble formation during pulsed laser ablation: mechanism and implications

NASA Astrophysics Data System (ADS)

van Leeuwen, Ton G. J. M.; Jansen, E. Duco; Motamedi, Massoud; Welch, Ashley J.; Borst, Cornelius

1993-07-01

Holmium ((lambda) equals 2.09 micrometers ) and excimer ((lambda) equals 308 nm) lasers are used for ablation of tissue. In a previous study it was demonstrated that both excimer and holmium laser pulses produce fast expanding and collapsing vapor bubbles. To investigate whether the excimer induced bubble is caused by vaporization of water, the threshold fluence for bubble formation at a bare fiber tip in water was compared between the excimer laser (pulse length 115 ns) and the Q-switched and free-running holmium lasers (pulse length 1 microsecond(s) to 250 microsecond(s) , respectively). To induce bubble formation by excimer laser light in water, the absorber oxybuprocaine-hydrochloride (OBP-HCl) was added to the water. Fast flash photography was used to measure the threshold fluence as a function of the water temperature (6 - 90 degree(s)C) at environmental pressure. The ultraviolet excimer laser light is strongly absorbed by blood. Therefore, to document the implications of bubble formation at fluences above the tissue ablation threshold, excimer laser pulses were delivered in vitro in hemoglobin solution and in vivo in the femoral artery of the rabbit. We conclude that the principal content of the fast bubble induced by a 308 nm excimer laser pulse is water vapor. Therefore, delivery of excimer laser pulses in a water or blood environment will cause fast expanding water vapor bubbles, which may induce mechanical damage to adjacent tissue.

Effects of Fe concentration on the ion-irradiation induced defect evolution and hardening in Ni-Fe solid solution alloys

DOE PAGES

Jin, Ke; Guo, Wei; Lu, Chenyang; ...

2016-12-01

Understanding alloying effects on the irradiation response of structural materials is pivotal in nuclear engineering. In order to systematically explore the effects of Fe concentration on the irradiation-induced defect evolution and hardening in face-centered cubic Ni-Fe binary solid solution alloys, single crystalline Ni-xFe (x = 0–60 at%) alloys have been grown and irradiated with 1.5 MeV Ni ions. The irradiations have been performed over a wide range of fluences from 3 × 10 13 to 3 × 10 16 cm -2 at room temperature. Ion channeling technique has shown reduced damage accumulation with increasing Fe concentration in the low fluencemore » regime, which is consistent to the results from molecular dynamic simulations. We did not observe any irradiation-induced compositional segregation in atom probe tomography within the detection limit, even in the samples irradiated with high fluence Ni ions. Transmission electron microscopy analyses have further demonstrated that the defect size significantly decreases with increasing Fe concentration, indicating a delay in defect evolution. Furthermore, irradiation induced hardening has been measured by nanoindentation tests. Ni and the Ni-Fe alloys have largely different initial hardness, but they all follow a similar trend for the increase of hardness as a function of irradiation fluence.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO2

NASA Astrophysics Data System (ADS)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2018-01-01

The accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 ×1016 cm-2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.

Effects of Fe concentration on the ion-irradiation induced defect evolution and hardening in Ni-Fe solid solution alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Ke; Guo, Wei; Lu, Chenyang

Understanding alloying effects on the irradiation response of structural materials is pivotal in nuclear engineering. In order to systematically explore the effects of Fe concentration on the irradiation-induced defect evolution and hardening in face-centered cubic Ni-Fe binary solid solution alloys, single crystalline Ni-xFe (x = 0–60 at%) alloys have been grown and irradiated with 1.5 MeV Ni ions. The irradiations have been performed over a wide range of fluences from 3 × 10 13 to 3 × 10 16 cm -2 at room temperature. Ion channeling technique has shown reduced damage accumulation with increasing Fe concentration in the low fluencemore » regime, which is consistent to the results from molecular dynamic simulations. We did not observe any irradiation-induced compositional segregation in atom probe tomography within the detection limit, even in the samples irradiated with high fluence Ni ions. Transmission electron microscopy analyses have further demonstrated that the defect size significantly decreases with increasing Fe concentration, indicating a delay in defect evolution. Furthermore, irradiation induced hardening has been measured by nanoindentation tests. Ni and the Ni-Fe alloys have largely different initial hardness, but they all follow a similar trend for the increase of hardness as a function of irradiation fluence.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Anikara, R.

1972-01-01

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Effect of Microstructure on Spontaneous Polarization in Amorphous Solid Water (ASW) Films C. Bu[a], J. Shi[b] and R. A. Baragiola[a] [a]University of Virginia, Charlottesville, VA 22904[b]Syracuse University, Syracuse, NY 13244

NASA Astrophysics Data System (ADS)

Bu, Caixia; Shi, Jianming; Baragiola, Raul A.

2014-11-01

Introduction: Water ice is abundant on many planetary bodies within the outer solar system. We report on the spontaneous polarization and thermal relaxation of ASW films formed at 10 - 110 K and provide evidence for the essential role of porosity [1].Experiments: Experiments were performed in an ultra-high vacuum system. ASW films were deposited from a collimated vapor beam or from a diffuse background water vapor onto a liquid-He cooled, gold-coated quartz crystal microbalance (QCM). The porosity was calculated by combining the measurements obtained from the QCM and UV reflectance [2]. The surface potential was determined using a Kelvin probe.Results: We focused on observations pertaining to the porosity: 1) the surface potential experiences an abrupt change of -0.25 V relative to the substrate during deposition of the first ~5 monolayers and subsequently increases linearly with thickness; 2) the surface potential magnitude decreases with the incidence angle; 3) the surface potential decreases with temperature after a lag of ~4 K above the deposition temperature; it decreases more slowly in films with larger incidence angle; 4) for charged films with different pre-annealing temperatures, the ratios of surface potential to fluence remain roughly constant with temperature before discharged; 5) the surface potential decreases with time at a constant annealing temperature.Conclusions: These observations suggest that the polarization is governed by the relaxation of the micropore structure rather than changes in intrinsic dielectric behavior of the water network [3]. We propose that the observed surface potential results from a fraction of aligned water dipoles on the internal surface area of the pores. Depolarization occurs during the collapse of the pores, resulting in the decrease of the surface potential. References: [1] E. Mayer et al. (1986) Nature (London) 319, 298 (1986); [2] U. Raut et al. (2007) J. Chem. Phys. 127, 204713. [3] M. J. Iedema et al. (1998) J. Chem. Phys. B 102, 9203.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

1994-01-01

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

1994-09-13

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

Ion irradiation synthesis of Ag–Au bimetallic nanospheroids in SiO{sub 2} glass substrate with tunable surface plasmon resonance frequency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Xuan; Yu, Ruixuan; Takayanagi, Shinya

2013-08-07

Ag–Au bimetallic nanospheroids with tunable localized surface plasmon resonance (LSPR) were synthesized by 100 keV Ar–ion irradiation of 30 nm Ag–Au bimetallic films deposited on SiO{sub 2} glass substrates. A shift of the LSPR peaks toward shorter wavelengths was observed up to an irradiation fluence of 1.0 × 10{sup 17} cm{sup −2}, and then shifted toward the longer wavelength because of the increase of fragment volume under ion irradiation. Further control of LSPR frequency over a wider range was realized by modifying the chemical components. The resulting LSPR frequencies lie between that of the pure components, and an approximate linearmore » shift of the LSPR toward the longer wavelength with the Au concentration was achieved, which is in good agreement with the theoretical calculations based on Gans theory. In addition, the surface morphology and compositions were examined with a scanning electron microscope equipped with an energy dispersive spectrometer, and microstructural characterizations were performed using a transmission electron microscope. The formation of isolated photosensitive Ag–Au nanospheroids with a FCC structure partially embedded in the SiO{sub 2} substrate was confirmed, which has a potential application in solid-state devices.« less

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Simulation of carbon nanotube welding through Ar bombardment.

PubMed

Kucukkal, Mustafa U; Stuart, Steven J

2017-04-01

Single-walled carbon nanotubes show promise as nanoscale transistors for nanocomputing applications. This use will require appropriate methods for creating electrical connections between distinct nanotubes, analogous to welding of metallic wires at larger length scales, but methods for performing nanoscale chemical welding are not yet sufficiently understood. This study examines the effect of Ar bombardment on the junction of two crossed single-walled carbon nanotubes, to understand the value and limitations of this method for generating connections between nanotubes. A geometric criterion was used to assess the quality of the junctions formed, with the goal of identifying the most productive conditions for experimental ion bombardment. In particular, the effects of nanotube chirality, Ar impact kinetic energy, impact particle flux and fluence, and annealing temperature were considered. The most productive bombardment conditions, leading to the most crosslinking of the tubes with the smallest loss of graphitic (i.e., conductive) character, were found to be at relatively mild impact energies (100 eV), with low flux and high-temperature (3000 K) annealing. Particularly noteworthy for experimental application, a high junction quality is maintained for a relatively broad range of fluences, from 3 × 10 19  m -2 to at least 1 × 10 20  m -2 .

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Transient thermal and nonthermal electron and phonon relaxation after short-pulsed laser heating of metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giri, Ashutosh; Hopkins, Patrick E., E-mail: phopkins@virginia.edu

2015-12-07

Several dynamic thermal and nonthermal scattering processes affect ultrafast heat transfer in metals after short-pulsed laser heating. Even with decades of measurements of electron-phonon relaxation, the role of thermal vs. nonthermal electron and phonon scattering on overall electron energy transfer to the phonons remains unclear. In this work, we derive an analytical expression for the electron-phonon coupling factor in a metal that includes contributions from equilibrium and nonequilibrium distributions of electrons. While the contribution from the nonthermal electrons to electron-phonon coupling is non-negligible, the increase in the electron relaxation rates with increasing laser fluence measured by thermoreflectance techniques cannot bemore » accounted for by only considering electron-phonon relaxations. We conclude that electron-electron scattering along with electron-phonon scattering have to be considered simultaneously to correctly predict the transient nature of electron relaxation during and after short-pulsed heating of metals at elevated electron temperatures. Furthermore, for high electron temperature perturbations achieved at high absorbed laser fluences, we show good agreement between our model, which accounts for d-band excitations, and previous experimental data. Our model can be extended to other free electron metals with the knowledge of the density of states of electrons in the metals and considering electronic excitations from non-Fermi surface states.« less

Nickel nanowires mesh fabricated by ion beam irradiation-induced nanoscale welding for transparent conducting electrodes

NASA Astrophysics Data System (ADS)

Honey, S.; Ahmad, I.; Madhuku, M.; Naseem, S.; Maaza, M.; Kennedy, J. V.

2017-07-01

In this report, random nickel nanowires (Ni-NWs) meshes are fabricated by ions beam irradiation-induced nanoscale welding of NWs on intersecting positions. Ni-NWs are exposed to beam of 50 KeV Argon (Ar+) ions at various fluencies in the range ~1015 ions cm-2 to 1016 ions cm-2 at room temperature. Ni-NWs are welded due to accumulation of Ar+ ions beam irradiation-induced sputtered atoms on crossing positions. Ar+ ions irradiated Ni-NWs meshes are optically transparent and optical transparency is enhanced with increase in beam fluence of Ar+ ions. Ar+ ions beam irradiation-induced welded and optically transparent mesh is then exposed to 2.75 MeV hydrogen (H+) ions at fluencies 1  ×  1015 ions cm-2, 3  ×  1015 ions cm-2 and 1  ×  1016 ions cm-2 at room temperature. MeV H+ ions irradiation-induced local heat cause melting and fusion of NWs on intersecting points and eventually lead to reduce contact resistance between Ni-NWs. Electrical conductivity is enhanced with increase in beam fluence of H+ ions. These welded highly transparent and electrically conductive Ni-NWs meshes can be employed as transparent conducting electrodes in optoelectronic devices.

Ultrafast dynamics of defect-assisted electron-hole recombination in monolayer MoS2.

PubMed

Wang, Haining; Zhang, Changjian; Rana, Farhan

2015-01-14

In this Letter, we present nondegenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS2 monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts ∼ 2 ps and a slow time scale that lasts longer than ∼ 100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two-dimensional atomic materials, together with strong electron and hole correlations in two-dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two-dimensional atomic materials.

Cooperative inter- and intra-layer lattice dynamics of photoexcited multi-walled carbon nanotubes studied by ultrafast electron diffraction.

PubMed

Sun, Shuaishuai; Li, Zhongwen; Li, Zi-An; Xiao, Ruijuan; Zhang, Ming; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2018-04-26

Optical tuning and probing ultrafast structural response of nanomaterials driven by electronic excitation constitute a challenging but promising approach for understanding microscopic mechanisms and applications in microelectromechanical systems and optoelectrical devices. Here we use pulsed electron diffraction in a transmission electron microscope to investigate laser-induced tubular lattice dynamics of multi-walled carbon nanotubes (MWCNTs) with varying laser fluence and initial specimen temperature. Our photoexcitation experiments demonstrate cooperative and inverse collective atomic motions in intralayer and interlayer directions, whose strengths and rates depend on pump fluence. The electron-driven and thermally driven structural responses with opposite amplitudes cause a crossover between intralayer and interlayer directions. Our ab initio calculations support these findings and reveal that electrons excited from π to π* orbitals in a carbon tube weaken the intralayer bonds while strengthening the interlayer bonds along the radial direction. Moreover, by probing the structural dynamics of MWCNTs at initial temperatures of 300 and 100 K, we uncover the concomitance of thermal and nonthermal dynamical processes and their mutual influence in MWCNTs. Our results illustrate the nature of electron-driven nonthermal process and electron-phonon thermalization in the MWCNTs, and bear implications for the intricate energy conversion and transfer in materials at the nanoscale.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Wettability of eutectic NaLiCO3 salt on magnesium oxide substrates at 778 K

NASA Astrophysics Data System (ADS)

Li, Chuan; Li, Qi; Cao, Hui; Leng, Guanghui; Li, Yongliang; Wang, Li; Zheng, Lifang; Ding, Yulong

2018-06-01

We investigated the wetting behavior of a eutectic carbonate salt of NaLiCO3 on MgO substrates at an elevated temperature of 778 K by measuring contact angle with a sessile drop method. Both sintered and non-sintered MgO were prepared and used as the substrates. The sintered substrates were obtained by sintering compacted MgO powders at 500-1300 °C. For comparison purposes, a single crystal MgO substrate was also used in the work. The different sintering temperatures provided MgO substrates with different structures, allowing their effects on salt penetration and hence wettability and surface energy to be investigated. A scanning electron microscope equipped with energy dispersive spectrometry and an atomic force microscope were used to observe the morphology and structures of the MgO substrates as well as the salt penetration. The results showed a good wettability of the carbonate salt on both the sintered and non-sintered MgO substrates and the wettability depended strongly on the structure of the substrates. The non-sintered MgO substrate has a loose surface particle packing with large pores and crevices, leading to significant salt infiltration, and the corresponding contact angle was measured to be ∼25°. The contact angle of the salt on the sintered MgO substrates increased with an increase in the sintering temperature of the MgO substrate, and the contact angle of the salt on the single crystal substrate was the highest at ∼40°. The effect of the sintering temperature for making the MgO substrate could be linked to the surface energy, and the linkage is validated by the AFM measurements of the adhesion forces of the MgO substrates.

Photoluminescence and reflectivity of polymethylmethacrylate implanted by low-energy carbon ions at high fluences

NASA Astrophysics Data System (ADS)

Wang, Jun; Zhu, Fei; Zhang, Bei; Liu, Huixian; Jia, Guangyi; Liu, Changlong

2012-11-01

Polymethylmethacrylate (PMMA) specimens were implanted with 30 keV carbon ions in a fluence range of 1 × 1016 to 2 × 1017 cm-2, and photoluminescence (PL) and reflectivity of the implanted samples were examined. A luminescent band with one peak was found in PL spectra excited by 480 nm line, but its intensity did not vary in parallel with ion fluence. The strongest PL occurred at the fluence of 5 × 1016 cm-2. Results from visible-light-excited micro-Raman spectra indicated that the formation of hydrogenated amorphous carbon structures in subsurface layer and their evolutions with ion fluence could be responsible for the observed PL responses. Measurements of the small-angle reflectance spectra from both the implanted and rear surfaces of samples in the ultraviolet-visible (UV-vis) range demonstrated a kind of both fluence-dependent and wavelength-related reflectivity variations, which were attributed to the structural changes induced by ion implantation. A noticeable reflectivity modification, which may be practically used, could be found at the fluence of 1 × 1016 cm-2.

Hotspot electron temperature from x-ray continuum measurements on the NIF

DOE PAGES

Jarrott, L. C.; Benedetti, L. R.; Chen, H.; ...

2016-08-24

We report on measurements of the electron temperature in the hotspot of inertially confined, layered, spherical implosions on the National Ignition Facility using a differential filtering diagnostic. Measurements of the DT and DD ion temperatures using neutron time-of-flight detectors are complicated by the contribution of hot spot motion to the peak width, which produce an apparent temperature higher than the thermal temperature. The electron temperature is not sensitive to this non-thermal velocity and is thus a valuable input to interpreting the stagnated hot spot conditions. Here we show that the current differential filtering diagnostic provides insufficient temperature resolution for themore » hot spot temperatures of interest. We then propose a new differential filter configuration utilizing larger pinhole size to increase spectral fluence, as well as thicker filtration. In conclusion, this new configuration will improve measurement uncertainty by more than a factor of three, allowing for a more accurate hotspot temperature.« less

Probing Exciton and Charge Dynamics in Organic Thin Films and Photovoltaics with Nonlinear Spectroscopy

NASA Astrophysics Data System (ADS)

McDonough, Thomas J.

Emerging organic solar cell technologies offer unique advantages over silicon solar cells, such as solution processability and the use of flexible substrates, but the efficiencies of these devices do not yet match the efficiency of silicon. Ultrafast nonlinear spectroscopies can probe the fates of photoexcited species on timescales in which these species are lost to channels that do not result in electric current. In the first study, I compare the ultrafast dynamics of singlet fission and charge generation in pentacene films grown on glass and graphene. The molecular orientation is different on the two substrates: the long axis of the pentacene molecules are "standing-up" (normal to the surface) on glass and "lying-down" (parallel to the surface) on graphene. By studying the fluence and polarization dependence of the transient absorption of pentacene on these two substrates, I am able to clarify previous spectral assignments. I identify a broad, isotropic absorption at 853 nm as due in significant part to hole absorption, in contrast to this feature's typical assignment to T1-T2 absorption. At high fluence, additional peaks at 614 and 688 (on glass) nm appear, whose kinetics and anisotropies are not explained by heating, which I assign to charge generation. In the second study, I utilize two-dimensional white-light spectroscopy to study the morphology dependence of exciton diffusion in semiconducting carbon nanotubes. I analyze the spectral diffusion of the S 1-S1 2D-WL lineshape via the center line slope method to separate the homogeneous and inhomogeneous contributions to the lineshape in each sample. I determine a morphology independent homogeneous linewidth of 10 meV, but I find that the inhomogeneous linewidth is sensitive to the particular sample environment. I model our experimental spectra with kinetic Monte Carlo simulations of exciton diffusion in a 1D potential. I also present preliminary bias-dependent transient absorption and 2D-WL measurements of carbon nanotube solar cell devices. I observe increasing positive trion absorption with increasing forward bias. The kinetics in the device are much different than the kinetics in the thin film, and there is an interesting change in kinetics with bias voltage that requires further investigation.

Evidence of diffusive fractal aggregation of TiO2 nanoparticles by femtosecond laser ablation at ambient conditions

NASA Astrophysics Data System (ADS)

Celardo, G. L.; Archetti, D.; Ferrini, G.; Gavioli, L.; Pingue, P.; Cavaliere, E.

2017-01-01

The specific mechanisms which lead to the formation of fractal nanostructures by pulsed laser deposition remain elusive despite intense research efforts, motivated mainly by the technological interest in obtaining tailored nanostructures with simple and scalable production methods. Here we focus on fractal nanostructures of titanium dioxide, TiO2, a strategic material for many applications, obtained by femtosecond laser ablation at ambient conditions. We compare a theoretical model of fractal formation with experimental data. The comparison of theory and experiment confirms that fractal aggregates are formed after landing of the ablated material on the substrate surface by a simple diffusive mechanism. We model the fractal formation through extensive Monte Carlo simulations based on a set of minimal assumptions: TiO2 nanoparticles arrive already formed on the substrate, then they diffuse in a size/mass independent way and stick irreversibly upon touching, thus forming fractal clusters. Despite its simplicity, our model explains the main features of the fractal structures arising from the complex interaction of large TiO2 nanoparticles with different substrates. Indeed our model is able to reproduce both the fractal dimensions and the area distributions of the nanostructures for different densities of the ablated material. Finally we discuss the role of the thermal conductivity of the substrate and the laser fluence on the properties of the fractal nanostructures. Our results represent an advancement towards controlling the production of fractal nanostructures by pulsed laser deposition.

Developing upconversion nanoparticle-based smart substrates for remote temperature sensing

NASA Astrophysics Data System (ADS)

Coker, Zachary; Marble, Kassie; Alkahtani, Masfer; Hemmer, Philip; Yakovlev, Vladislav V.

2018-02-01

Recent developments in understanding of nanomaterial behaviors and synthesis have led to their application across a wide range of commercial and scientific applications. Recent investigations span from applications in nanomedicine and the development of novel drug delivery systems to nanoelectronics and biosensors. In this study, we propose the application of a newly engineered temperature sensitive water-based bio-compatible core/shell up-conversion nanoparticle (UCNP) in the development of a smart substrate for remote temperature sensing. We developed this smart substrate by dispersing functionalized nanoparticles into a polymer solution and then spin-coating the solution onto one side of a microscope slide to form a thin film substrate layer of evenly dispersed nanoparticles. By using spin-coating to deposit the particle solution we both create a uniform surface for the substrate while simultaneously avoid undesired particle agglomeration. Through this investigation, we have determined the sensitivity and capabilities of this smart substrate and conclude that further development can lead to a greater range of applications for this type smart substrate and use in remote temperature sensing in conjunction with other microscopy and spectroscopy investigations.

Measured Thermal and Fast Neutron Fluence Rates for ATF-1 Holders During ATR Cycle 157D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Larry Don; Miller, David Torbet

This report contains the thermal (2200 m/s) and fast (E>1MeV) neutron fluence rate data for the ATF-1 holders located in core for ATR Cycle 157D which were measured by the Radiation Measurements Laboratory (RML) as requested by the Power Reactor Programs (ATR Experiments) Radiation Measurements Work Order. This report contains measurements of the fluence rates corresponding to the particular elevations relative to the 80-ft. core elevation. The data in this report consist of (1) a table of the ATR power history and distribution, (2) a hard copy listing of all thermal and fast neutron fluence rates, and (3) plots ofmore » both the thermal and fast neutron fluence rates. The fluence rates reported are for the average power levels given in the table of power history and distribution.« less

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, F.; Hoard, R.W.

1994-05-10

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, Fred; Hoard, Ronald W.

1994-01-01

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

SGR J1550-5418 Bursts Detected with the Fermi Gamma-Ray Burst Monitor during Its Most Prolific Activity

NASA Technical Reports Server (NTRS)

vanderHorst, A. J.; Kouveliotou, C.; Gorgone, N. M.; Kaneko, Y.; Baring, M. G.; Guiriec, S.; Gogus, E,; Granot, J.; Watts, A. L.; Lin, L.;

HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

NASA Astrophysics Data System (ADS)

Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

2014-03-01

In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

New design of textile light diffusers for photodynamic therapy.

PubMed

Cochrane, Cédric; Mordon, Serge R; Lesage, Jean Claude; Koncar, Vladan

2013-04-01

A homogeneous and reproducible fluence delivery rate during clinical photodynamic therapy (PDT) plays a determinant role in preventing under- or overtreatment. PDT applied in dermatology has been carried out with a wide variety of light sources delivering a broad range of more or less adapted light doses. Due to the complexities of the human anatomy, these light sources do not in fact deliver a uniform light distribution to the skin. Therefore, the development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of plastic optical fiber (POF) into textile structures could offer an interesting alternative. In this article, a textile light diffuser (TLD) has been developed using POF and Polyester yarns. Predetermined POF macrobending leads to side emission of light when the critical angle is exceeded. Therefore, a specific pattern based on different satin weaves has been developed in order to improve light emission homogeneity and to correct the decrease of side emitted radiation intensity along POF. The prototyped fabrics (approximately 100 cm(2): 5×20 cm) were woven using a hand loom, then both ends of the POF were coupled to a laser diode (5 W, 635 nm). The fluence rate (mW/ cm(2)) and the homogeneity of light delivery by the TLD were evaluated. Temperature evolution, as a function of time, was controlled with an infrared thermographic camera. When using a power source of 5 W, the fluence rate of the TLD was 18±2.5 mw/cm(2). Due to the high efficiency of the TLD, the optical losses were very low. The TLD temperature elevation was 0.6 °C after 10 min of illumination. Our TLD meets the basic requirements for PDT: homogeneous light distribution and flexibility. It also proves that large (500 cm(2)) textile light diffusers adapted to skin, but also to peritoneal or pleural cavity, PDTs can be easily produced by textile manufacturing processes. Copyright © 2012 Elsevier B.V. All rights reserved.

High temperature electronic gain device

DOEpatents

McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

On the predictive potential of Pc5 ULF waves to forecast relativistic electrons based on their relationships over two solar cycles

NASA Astrophysics Data System (ADS)

Lam, Hing-Lan

2017-01-01

A statistical study of relativistic electron (>2 MeV) fluence derived from geosynchronous satellites and Pc5 ultralow frequency (ULF) wave power computed from a ground magnetic observatory data located in Canada's auroral zone has been carried out. The ground observations were made near the foot points of field lines passing through the GOESs from 1987 to 2009 (cycles 22 and 23). We determine statistical relationships between the two quantities for different phases of a solar cycle and validate these relationships in two different cycles. There is a positive linear relationship between log fluence and log Pc5 power for all solar phases; however, the power law indices vary for different phases of the cycle. High index values existed during the descending phase. The Pearson's cross correlation between electron fluence and Pc5 power indicates fluence enhancement 2-3 days after strong Pc5 wave activity for all solar phases. The lag between the two quantities is shorter for extremely high fluence (due to high Pc5 power), which tends to occur during the declining phases of both cycles. Most occurrences of extremely low fluence were observed during the extended solar minimum of cycle 23. The precursory attribute of Pc5 power with respect to fluence and the enhancement of fluence due to rising Pc5 power both support the notion of an electron acceleration mechanism by Pc5 ULF waves. This precursor behavior establishes the potential of using Pc5 power to predict relativistic electron fluence.

Optimizing fluence and debridement effects on cutaneous resurfacing carbon dioxide laser surgery.

PubMed

Weisberg, N K; Kuo, T; Torkian, B; Reinisch, L; Ellis, D L

1998-10-01

To develop methods to compare carbon dioxide (CO2) resurfacing lasers, fluence, and debridement effects on tissue shrinkage and histological thermal denaturation. In vitro human or in vivo porcine skin samples received up to 5 passes with scanner or short-pulsed CO2 resurfacing lasers. Fluences ranging from 2.19 to 17.58 J/cm2 (scanner) and 1.11 to 5.56 J/cm2 (short pulsed) were used to determine each laser's threshold energy for clinical effect. Variable amounts of debridement were also studied. Tissue shrinkage was evaluated by using digital photography to measure linear distance change of the treated tissue. Tissue histological studies were evaluated using quantitative computer image analysis. Fluence-independent in vitro tissue shrinkage was seen with the scanned and short-pulsed lasers above threshold fluence levels of 5.9 and 2.5 J/cm2, respectively. Histologically, fluence-independent thermal depths of damage of 77 microns (scanner) and 25 microns (pulsed) were observed. Aggressive debridement of the tissue increased the shrinkage per pass of the laser, and decreased the fluence required for the threshold effect. In vivo experiments confirmed the in vitro results, although the in vivo threshold fluence level was slightly higher and the shrinkage obtained was slightly lower per pass. Our methods allow comparison of different resurfacing lasers' acute effects. We found equivalent laser tissue effects using lower fluences than those currently accepted clinically. This suggests that the morbidity associated with CO2 laser resurfacing may be minimized by lowering levels of tissue input energy and controlling for tissue debridement.

Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

NASA Astrophysics Data System (ADS)

Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

2017-07-01

We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

Fiber Bragg grating cryogenic temperature sensors

NASA Astrophysics Data System (ADS)

Gupta, Sanjay; Mizunami, Toru; Yamao, Takashi; Shimomura, Teruo

1996-09-01

Temperature sensing to as low as 80 K was demonstrated with 1.55- mu m fiber Bragg gratings. The gratings were bonded on substrates to increase sensitivity, and a shift of the reflection wavelength was measured. The temperature sensitivity was 0.02 nm/K at 100 K when an aluminum substrate was used and 0.04 nm/K at 100 K when a poly(methyl methacrylate) substrate was used. These values are smaller than those at room temperature because of the nonlinearity of both the thermal expansion and the thermo-optic effect. Extension to the liquid helium temperature is also discussed.

Femtosecond-laser-induced periodic surface structures on magnetic layer targets: The roles of femtosecond-laser interaction and of magnetization

NASA Astrophysics Data System (ADS)

Czajkowski, Klaus; Ratzke, Markus; Varlamova, Olga; Reif, Juergen

2017-09-01

We investigate femtosecond laser induced periodic surface structures (LIPSS) on a complex multilayer target, namely a 20-GB computer hard disk (HD), consisting of a metallic substrate, a magnetic layer, and a thin polymeric protective layer. Depending on the dose (fluence × number of pulses) first the polymeric cover layer is completely removed, revealing a periodic surface modulation of the magnetic layer which seems not to be induced by the laser action. At higher dose, the magnetic layer morphology is strongly modified by laser-induced periodic structures (LIPS) and, finally, kind of an etch stop is reached at the bottom of the magnetic layer. The LIPS shows very high modulation depth below and above the original surface level. In the present work, the role of magnetization and magneto-mechanic forces in the structure formation process is studied by monitoring the bit-wise magnetization of the HD with a magnetic force microscope. It is shown that the structures at low laser dose are reflecting the magnetic bits. At higher dose the magnetic influence appears to be extinguished on the account of LIPS. This suggests a transient overcoming the Curie temperature and an associated loss of magnetic order. The results compare well with our model of LIPS/LIPSS formation by self-organized relaxation from a laser-induced thermodynamic instability.

Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

NASA Astrophysics Data System (ADS)

Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

2017-08-01

In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.