Science.gov

Sample records for fluorocarbon films deposited

  1. Selective Plasma Deposition of Fluorocarbon Films on SAMs

    NASA Technical Reports Server (NTRS)

    Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

    2006-01-01

    A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

  2. Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics

    SciTech Connect

    Bayiati, P.; Tserepi, A.; Petrou, P. S.; Kakabakos, S. E.; Misiakos, K.; Gogolides, E.

    2007-05-15

    The present work focuses on the plasma deposition of fluorocarbon (FC) films on surfaces and the electrostatic control of their wettability (electrowetting). Such films can be employed for actuation of fluid transport in microfluidic devices, when deposited over patterned electrodes. Here, the deposition was performed using C{sub 4}F{sub 8} and the plasma parameters that permit the creation of films with optimized properties desirable for electrowetting were established. The wettability of the plasma-deposited surfaces was characterized by means of contact angle measurements (in the static and dynamic mode). The thickness of the deposited films was probed in situ by means of spectroscopic ellipsometry, while the surface roughness was provided by atomic force microscopy. These plasma-deposited FC films in combination with silicon nitride, a material of high dielectric constant, were used to create a dielectric structure that requires reduced voltages for successful electrowetting. Electrowetting experiments using protein solutions were conducted on such optimized dielectric structures and were compared with similar structures bearing commercial spin-coated Teflon registered amorphous fluoropolymer (AF) film as the hydrophobic top layer. Our results show that plasma-deposited FC films have desirable electrowetting behavior and minimal protein adsorption, a requirement for successful transport of biological solutions in 'digital' microfluidics.

  3. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  4. Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process

    NASA Astrophysics Data System (ADS)

    Fang, J. S.; Lin, C. S.; Huang, Y. Y.; Chin, T. S.

    2015-08-01

    Development of facile methods to prepare hydrophobic films is of great important. We report fluorocarbon films deposited by a simple plasma-assisted chemical vapor deposition method using C3F8 and C2H2 with extra Ar and/or O2 gases. The surface characteristics of the films were examined by scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The hydrophobic and oleophobic properties of the films were evaluated by measurements of static contact angle. The results showed that the film deposited with C3F8, C2H2, Ar, and O2 exhibited a water contact angle of 114°, hexadecane contact angle of 45°, and transmittance of 94.5%. Photoelectron spectra further revealed that the films contained mainly CF and CF2 bonds and thus a high F/C ratio. Introduction of O2 increased the F/C ratio, which combined with the stripe-like surface of the films achieved better hydrophobicity.

  5. Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Ajmera, P. K.; Lee, G. S.; Singh, Varshni

    2005-09-01

    Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2 2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4 1.78 GPa and in the range 11.6 23.2 MPa of compressive stress.

  6. The effects of changing deposition conditions on the similarity of sputter-deposited fluorocarbon thin films to bulk PTFE

    NASA Astrophysics Data System (ADS)

    Zandona, Philip

    Solid lubrication of space-borne mechanical components is essential to their survival and the continued human exploration of space. Recent discoveries have shown that PTFE when blended with alumina nanofillers exhibits greatly improved physical performance properties, with wear rates being reduced by several orders of magnitude. The bulk processes used to produce the PTFE-alumina blends are limiting. Co-sputter deposition of PTFE and a filler material overcomes several of these limitations by enabling the reduction of particle size to the atomic level and also by allowing for the even coating of the solid lubricant on relatively large areas and components. The goal of this study was to establish a baseline performance of the sputtered PTFE films as compared to the bulk material, and to establish deposition conditions that would result in the most bulk-like film possible. In order to coax change in the structure of the sputtered films, sputtering power and deposition temperature were increased independently. Further, post-deposition annealing was applied to half of the deposited film in an attempt to affect change in the film structure. Complications in the characterization process due to increasing film thickness were also examined. Bulk-like metrics for characterization processes the included Fourier transform infrared spectroscopy (FTIR), X-ray spectroscopy (XPS), nanoindentation via atomic force microscopy, and contact angle of water on surface measurements were established. The results of the study revealed that increasing sputtering power and deposition temperature resulted in an increase in the similarity between the fluorocarbon films and the bulk PTFE, at a cost of affecting the potential of the film thicknesses, either by affecting the deposition process directly, or by decreasing the longevity of the sputtering targets.

  7. Dielectric properties of fluorocarbon thin films deposited by radio frequency sputtering of polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Sylvestre, A.

    2002-10-01

    We investigate the dielectric properties of fluorocarbon thin films deposited by radio-frequency magnetron sputtering of polytetrafluroethylene. The dielectric constant and the loss factor are studied as a function of frequency (0.1 Hz-1 MHz, infrared frequencies) and temperature (room temperature to 100 °C). The value of the dielectric constant is 1.8 at optical frequencies, and around 2.3 in the 0.1 Hz-1 MHz range. The background loss factor is around 0.8% in these samples. Two different polarization mechanisms are identified (β and γ relaxations). The γ process dominates the dielectric constant from 0.1 to 1 MHz. In this frequency range the dielectric constant decreases with temperature (about -4% from room temperature to 100 °C). Temperature dependence of the dielectric constant is well described by a simple Debye model (linear variation of the dielectric constant with 1/T). The γ relaxation is tentatively ascribed to C-F bonds (Nμ2=4×10-32 C2 m-1). The β relaxation has a loss peak located at very low frequencies (<0.1 Hz). It leads to an increase of loss below 10 Hz when temperature is increased above 75 °C. The high-frequency part of the β loss peak decreases as ω-0.35. Study of its temperature dependence leads to an activation energy of 0.66 eV.

  8. Plasma-deposited fluorocarbon polymer films on titanium for preventing cell adhesion: a surface finishing for temporarily used orthopaedic implants

    NASA Astrophysics Data System (ADS)

    Finke, B.; Testrich, H.; Rebl, H.; Walschus, U.; Schlosser, M.; Zietz, C.; Staehlke, S.; Nebe, J. B.; Weltmann, K. D.; Meichsner, J.; Polak, M.

    2016-06-01

    The design of a titanium implant surface should ideally support its later application in clinical use. Temporarily used implants have to fulfil requirements different from permanent implants: they should ensure the mechanical stabilization of the bone stock but in trauma surgery they should not be integrated into the bone because they will be removed after fracture healing. Finishing of the implant surface by a plasma-fluorocarbon-polymer (PFP) coating is a possible approach for preventing cell adhesion of osteoblasts. Two different low pressure gas-discharge plasma processes, microwave (MW 2.45 GHz) and capacitively coupled radio frequency (RF 13.56 MHz) plasma, were applied for the deposition of the PFP film using a mixture of the precursor octafluoropropane (C3F8) and hydrogen (H2). The thin films were characterized by x-ray photoelectron spectroscopy, Fourier transform infrared reflection absorption spectroscopy, and water contact angle measurements. Cell culture experiments show that cell adhesion and spreading of MG-63 osteoblasts were clearly reduced or nonexistent on these surfaces, also after 24 h of storage in the cell culture medium. In vivo data demonstrated that the local inflammatory tissue response for the PFP films deposited in MW and RF plasma were comparable to uncoated controls.

  9. Improvement of adhesion strength and scratch resistance of fluorocarbon thin films by cryogenic treatment

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaojun; Wang, Jun; Shen, Jinpeng; Li, Rui; Yang, Guangcheng; Huang, Hui

    2014-01-01

    Fluorocarbon thin films have been widely applied as protective coatings due to unique physical and chemical properties, but the scratch resistance and adhesion strength between the films and substrates are rather poor. Coating technologies for stronger scratch resistance and adhesion strength are definitely needed and have great significance in coatings applications of fluorocarbon thin films. In this work, the scratch resistance and adhesion strength between silicon substrates and fluorocarbon thin films deposited by radio frequency (R.F.) magnetron sputtering were improved via a remarkably simple, flexible and nondestructive cryogenic treatment method. The effect of the cryogenic treatment on the microstructure, hardness, adhesion strength and scratch resistance of fluorocarbon thin films were investigated. XPS results indicated that the content of fluorine decreased slightly and the amount of cross-linked units increased after cryogenic treatment. Furthermore, the hardness of fluorocarbon thin films slightly improved. Nano-scratch test revealed that fluorocarbon thin films after this treatment had excellent scratch resistance and good adhesion strength.

  10. Comparative study of plasma-deposited fluorocarbon coatings on different substrates

    NASA Astrophysics Data System (ADS)

    Farsari, E.; Kostopoulou, M.; Amanatides, E.; Mataras, D.; Rapakoulias, D. E.

    2011-05-01

    The deposition of hydrophobic fluorocarbon coatings from C2F6 and C2F6-H2 rf discharges on different substrates was examined. Polyester textile, glass and two different ceramic compounds were used as substrates. The effect of the total gas pressure, the rf power dissipation and the deposition time on the hydrophobic character of the samples was investigated. Films deposited on polyester textiles at low pressure (0.03 mbar) and power consumption (16 mW cm-2) using pure C2F6 presented the highest water contact angles (~150°). On the other hand, the addition of hydrogen was necessary in order to deposit stable hydrophobic coatings on glass and ceramic substrates. Coatings deposited on glass at intermediate deposition rates (~100 Å min-1) and pressures presented the highest angles (~105°). Concerning the heavy clay ceramics, samples treated in low-pressure (0.05 mbar) and low-power (16 mW cm-2) discharges showed the highest contact angles. The deposition time was found to play an important role in the hydrophobicity and long-term behaviour of porous and rough substrates.

  11. Properties of solid polymer electrolyte fluorocarbon film. [used in hydrogen/oxygen fuel cells

    NASA Technical Reports Server (NTRS)

    Alston, W. B.

    1973-01-01

    The ionic fluorocarbon film used as the solid polymer electrolyte in hydrogen/oxygen fuel cells was found to exhibit delamination failures. Polarized light microscopy of as-received film showed a lined region at the center of the film thickness. It is shown that these lines were not caused by incomplete saponification but probably resulted from the film extrusion process. The film lines could be removed by an annealing process. Chemical, physical, and tensile tests showed that annealing improved or sustained the water contents, spectral properties, thermo-oxidative stability, and tensile properties of the film. The resistivity of the film was significantly decreased by the annealing process.

  12. MOCVD of YBa 2Cu 3O 7-x thin films using a Ba fluorocarbon-based precursor

    NASA Astrophysics Data System (ADS)

    Fröhlich, K.; Šouc, J.; Chromik, S.; Machajdik, D.; Kliment, V.

    1992-11-01

    We have prepared superconducting YBa 2Cu 3O 7- x films by MOCVD using fluorocarbon based Ba(hfa) 2 precursor. The films were deposited at 500°C and annealed in low pressure ( pO2=10 -2Pa) dry oxygen atmosphere as well as in argon/oxygen mixture in the presence of water vapour. The samples on a MgO single crystal substrate had Tc( R=0)=79 K and Jc=10 4 A/cm 2 at T=30 K in zero magnetic field while the film on SrTiO 3, annealed under the same conditions had Tc( R=0)=86 K and Jc reached a value of 10 5 A/cm 2 at T=78 K.

  13. 157 nm Pellicles (Thin Films) for Photolithography: Mechanistic Investigation of the VUV and UV-C Photolysis of Fluorocarbons

    SciTech Connect

    Lee, Kwangjoo; Jockusch, Steffen; Turro, Nicholas J.; French, Roger H.; Wheland, Robert C.; Lemon, M F.; Braun, Andre M.; Widerschpan, Tatjana; Dixon, David A.; Li, Jun; Ivan, Marius; Zimmerman, Paul

    2005-06-15

    The use of 157 nm as the next lower wavelength for photolithography for the production of semiconductors has created a need for transparent and radiation-durable polymers for use in soft pellicles, the polymer films which protect the chip from particle deposition. The most promising materials for pellicles are fluorinated polymers, but currently available fluorinated polymers undergo photodegradation and/or photodarkening upon long term exposure to 157 nm irradiation. To understand the mechanism of the photodegradation and photodarkening of fluorinated polymers, mechanistic studies on the photolysis of liquid model fluorocarbons, including perfluorobutylethyl ether and perfluoro-2 H-3-oxa-heptane, were performed employing UV, NMR, FTIR, GC, and GC/MS analyses. All hydrogen-containing compounds showed decreased photostability compared to the fully perfluorinated compounds. Irradiation in the presence of atmospheric oxygen showed reduced photostability compared to deoxygenated samples. Photolysis of the samples was performed at 157, 172, 185, and 254 nm and showed only minor wavelength dependence. Mechanisms for photodegradation of the fluorocarbons are proposed, which involve Rydberg excited states. Time-dependent density functional theory has been used to predict the excitation spectra of model compounds.

  14. Assembly and Structure of alpha-helical Peptide Films on Hydrophobic Fluorocarbon Surfaces

    SciTech Connect

    Weidner, T.; Samual, N; McCrea, K; Gamble, L; Ward, R; Castner, D

    2010-01-01

    The structure, orientation, and formation of amphiphilic {alpha}-helix model peptide films on fluorocarbon surfaces has been monitored with sum frequency generation (SFG) vibrational spectroscopy, near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, and x-ray photoelectron spectroscopy (XPS). The {alpha}-helix peptide is a 14-mer of hydrophilic lysine and hydrophobic leucine residues with a hydrophobic periodicity of 3.5. This periodicity yields a rigid amphiphilic peptide with leucine and lysine side chains located on opposite sides. XPS composition analysis confirms the formation of a peptide film that covers about 75% of the surface. NEXAFS data are consistent with chemically intact adsorption of the peptides. A weak linear dichroism of the amide {pi}* is likely due to the broad distribution of amide bond orientations inherent to the {alpha}-helical secondary structure. SFG spectra exhibit strong peaks near 2865 and 2935 cm{sup -1} related to aligned leucine side chains interacting with the hydrophobic surface. Water modes near 3200 and 3400 cm{sup -1} indicate ordering of water molecules in the adsorbed-peptide fluorocarbon surface interfacial region. Amide I peaks observed near 1655 cm{sup -1} confirm that the secondary structure is preserved in the adsorbed peptide. A kinetic study of the film formation process using XPS and SFG showed rapid adsorption of the peptides followed by a longer assembly process. Peptide SFG spectra taken at the air-buffer interface showed features related to well-ordered peptide films. Moving samples through the buffer surface led to the transfer of ordered peptide films onto the substrates.

  15. Correlation of elastohydrodynamic film thickness measurements for fluorocarbon type 2 ester, and polyphenyl ether lubricants

    NASA Technical Reports Server (NTRS)

    Loewenthal, S. H.; Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    A minimum films thickness correlation applicable to heavily loaded elastohydrodynamic (EHD) contacts was formulated from experimental data obtained by an X-ray transmission technique. The correlation, based on data generated with fluorocarbon, type II ester, and polyphenyl ether lubricants, extends a previous analysis developed from data for a synthetic paraffinic oil. The resulting correlation represents the data of the four lubricants reasonably well over a large range of operating conditions. Contained within the derived relation is a factor to account for the high-load dependence displayed by the measurements beyond that which is provided for by the theory. Thermal corrections applied to a commonly used film thickness formula showed little improvement to the general disagreement that exists between theory and test. Choice of contact geometry and material are judged to have a relatively mild influence on the form of the semiempirical model.

  16. Transparent Thin Films Deposited onto Polyester Film Substrate by Radio Frequency Sputtering with a Poly(tetrafluoroethylene) Target

    NASA Astrophysics Data System (ADS)

    Seino, Shou; Nagai, Yuki; Kobayashi, Masashi; Iwamori, Satoru; Noda, Kazuhiro

    2013-05-01

    Improvement technologies for antireflection property of transparent plastic substrates are required in computer displays. Inorganic coatings have been used to reduce the surface reflection. We have already reported that fluorocarbon thin films sputtered with a poly(tetrafluoroethylene) (PTFE) target are transparent and can be used for an antireflection film, although the pristine PTFE plate used for the sputtering target is white. The fluorocarbon thin films were deposited onto a polyester (PET) film substrate by an rf sputtering, and characterized their optical properties. Elemental ratio, fluorine for carbon, of the thin films increased and degree of cross-linking of the thin films decreased with an increase of the rf power. Arithmetical surface roughness of the fluorocarbon thin films slightly increased with an increase of the rf power. Surface roughness of the fluorocarbon thin film affects the transmittance as well as the chemical structure of the thin film. To enhance the transparency, the diffuse transmittance should be suppressed, and flat surface thin films should be prepared by the sputtering at lower rf power and pressure.

  17. UV-assisted modification and removal mechanism of a fluorocarbon polymer film on low-k dielectric trench structure.

    PubMed

    Mukherjee, Tamal; Berhe, Seare A; Goswami, Arindom; Chyan, Oliver; Singh, Kanwal Jit; Brown, Ian

    2015-03-11

    In this study, we report the first chemical characterization of a plasma-deposited model fluoropolymer on low-k dielectric nanostructure and its decomposition in UV/O2 conditions. Carbonyl incorporation and progressive removal of fluorocarbon fragments from the polymer were observed with increasing UV (≥230 nm) irradiation under atmospheric conditions. A significant material loss was achieved after 300 s of UV treatment and a subsequent wet clean completely removed the initially insoluble fluoropolymer from the patterned nanostructures. A synergistic mechanism of UV light absorption by carbonyl chromophore and oxygen incorporation is proposed to account for the observed photodegradation of the fluoropolymer. PMID:25679964

  18. Depositing Diamondlike Carbon Films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Sovey, J. S.; Banks, B. A.

    1986-01-01

    New process demonstrated to make thin films (usually thousands of angstroms to few microns thick) that have properties of diamonds. Various plasma and ion-beam techniques employed to generate films. Films made by radio-frequency plasma decomposition of hydrocarbon gas or other alkanes, by low-energy carbon-ion-beam deposition, or by ion plating and dual ion technique using carbon target. Advantages of new process over others are films produced, though amorphous, are clear, extremely hard, chemically inert, of high resistivity, and have index of refraction of 3.2 properties similar to those of single-crystal diamonds. Films have possible uses in microelectronic applications, high-energy-laser and plastic windows, corrosion protection for metals, and other applications where desired properties of film shaped during the film-formation process.

  19. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  20. Impact of etching kinetics on the roughening of thermal SiO{sub 2} and low-k dielectric coral films in fluorocarbon plasmas

    SciTech Connect

    Yin Yunpeng; Sawin, Herbert H.

    2007-07-15

    The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ion scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.

  1. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  2. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  3. PRODUCTION OF FLUOROCARBONS

    DOEpatents

    Sarsfield, N.F.

    1949-06-21

    This patent pertains to a process for recovering fluorocarbons from a liquid mixture of hydrocarbons with partially and completely fluorinated products thereof. It consists of contacting the mxture in the cold with a liquid which is a solvent for the hydrocarbons and which is a nonsolvent for the fluorocarbons, extracting the hydrocarbons, separating the fluorocarbon-containing layer from the solvent-containing layer, and submitting the fluorocarbon layer to fractlonal distillation, to isolate the desired fluorocarbon fraction. Suitable solvents wnich may be used in the process include the lower aliphatic alcohols, and the lower aliphatic ketones.

  4. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  5. Deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1984-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or large planar surfaces.

  6. Deposition of diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Sovey, J. S.; Banks, B. A. (Inventor)

    1984-01-01

    A diamondlike carbon film is deposited in the surface of a substrate by exposing the surface to an argon ion beam containing a hydrocarbon. The current density in the ion beam is low during initial deposition of the film. Subsequent to this initial low current condition, the ion beam is increased to full power. At the same time, a second argon ion beam is directed toward the surface of the substrate. The second ion beam has an energy level much greater than that of the ion beam containing the hydrocarbon. This addition of energy to the system increases mobility of the condensing atoms and serves to remove lesser bound atoms.

  7. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  8. Roughness assessment and wetting behavior of fluorocarbon surfaces.

    PubMed

    Terriza, Antonia; Álvarez, Rafael; Borrás, Ana; Cotrino, José; Yubero, Francisco; González-Elipe, Agustín R

    2012-06-15

    The wetting behavior of fluorocarbon materials has been studied with the aim of assessing the influence of the surface chemical composition and surface roughness on the water advancing and receding contact angles. Diamond like carbon and two fluorocarbon materials with different fluorine content have been prepared by plasma enhanced chemical vapor deposition and characterized by X-ray photoemission, Raman and FT-IR spectroscopies. Very rough surfaces have been obtained by deposition of thin films of these materials on polymer substrates previously subjected to plasma etching to increase their roughness. A direct correlation has been found between roughness and water contact angles while a superhydrophobic behavior (i.e., water contact angles higher than 150° and relatively low adhesion energy) was found for the films with the highest fluorine content deposited on very rough substrates. A critical evaluation of the methods currently used to assess the roughness of these surfaces by atomic force microscopy (AFM) has evidenced that calculated RMS roughness values and actual surface areas are quite dependent on both the scale of observation and image resolution. A critical discussion is carried out about the application of the Wenzel model to account for the wetting behavior of this type of surfaces. PMID:22483335

  9. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Sputter deposition of adherent thin films on complex geometric surfaces by ion beam sources is examined in order to evaluate three different types of protective coatings for die materials. In the first experiment, a 30 cm diameter argon ion source was used to sputter deposit adherent metallic films up to eight microns thick on H-13 steel, and a thermal fatigue test specimen sputter deposited with metallic coatings one micron thick was immersed in liquid aluminum and cooled by water for 15,000 cycles to simulate operational environments. Results show that these materials do protect the steel by reducing thermal fatigue and thereby increasing die lifetime. The second experiment generated diamond-like carbon films using a dual beam ion source system that directed an eight cm argon ion source beam at the substrates. These films are still in the process of being evaluated for crystallinity, hardness and infrared absorption. The third experiment coated a fiber glass beam shield incorporated in the eight-cm diameter mercury ion thruster with molybdenum to ensure proper electrical and thermal properties. The coating maintained its integrity even under acceleration tests.

  10. Chemical Vapor Deposition of Fluoroalkylsilane Monolayer Films for Adhesion Control in Microelectromechanical Systems

    SciTech Connect

    MAYER,THOMAS M.; DE BOER,MAARTEN P.; SHINN,NEAL D.; CLEWS,PEGGY J.; MICHALSKE,TERRY A.

    2000-01-26

    We have developed a new process for applying a hydrophobic, low adhesion energy coating to microelectromechanical (MEMS) devices. Monolayer films are synthesized from tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor in a low-pressure chemical vapor deposition process at room temperature. Film thickness is self-limiting by virtue of the inability of precursors to stick to the fluorocarbon surface of the film once it has formed. We have measured film densities of {approx}3 molecules nm{sup 2} and film thickness of {approx}1 nm. Films are hydrophobic, with a water contact angle >110{sup o}. We have also incorporated an in-situ downstream microwave plasma cleaning process, which provides a clean, reproducible oxide surface prior to film deposition. Adhesion tests on coated and uncoated MEMS test structures demonstrate superior performance of the FOTS coatings. Cleaned, uncoated cantilever beam structures exhibit high adhesion energies in a high humidity environment. An adhesion energy of 100 mJ m{sup -2} is observed after exposure to >90% relative humidity. Fluoroalkylsilane coated beams exhibit negligible adhesion at low humidity and {<=} 20 {micro}J m{sup -2} adhesion energy at >90% relative humidity. No obvious film degradation was observed for films exposed to >90% relative humidity at room temperature for >24 hr.

  11. Depositing Adherent Ag Films On Ti Films On Alumina

    NASA Technical Reports Server (NTRS)

    Honecy, Frank S.

    1995-01-01

    Report discusses cleaning of ceramic (principally, alumina) substrates in preparation for sputter deposition of titanium intermediate films on substrates followed by sputter deposition of outer silver films. Principal intended application, substrates sliding parts in advanced high-temperature heat engines, and outer silver films serve as solid lubricants: lubricating properties described in "Solid Lubricant for Alumina" (LEW-15495).

  12. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  13. Pulsed laser deposition: Prospects for commercial deposition of epitaxial films

    SciTech Connect

    Muenchausen, R.E.

    1999-03-01

    Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique for the deposition of thin films. The vapor source is induced by the flash evaporation that occurs when a laser pulse of sufficient intensity (about 100 MW/cm{sup 2}) is absorbed by a target. In this paper the author briefly defines pulsed laser deposition, current applications, research directed at gaining a better understanding of the pulsed laser deposition process, and suggests some future directions to enable commercial applications.

  14. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  15. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  16. Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Gonon, P.

    2005-10-01

    Fluorocarbon (C:F) and nitrogen-doped fluorocarbon (C:F:N) thin films are deposited by RF magnetron sputtering using a polytetrafluoroethylene (PTFE) target and Ar or Ar/N{2} sputtering gas. Properties of C:F:N films are compared to those of C:F films. They are studied using X-ray Photoelectron Spectroscopy (XPS), Infra-Red (IR) transmission spectroscopy, Thermo-Gravimetric Analysis (TGA), impedance spectroscopy, and current-voltage measurements. By adding nitrogen to the sputtering gas, XPS shows that nitrogen substitutes for fluorine leading to a decrease in the relative concentration of CF{x} species, to an increase in C-C bonds, and to the appearance of specific CFN bonds. There is also a new IR band at 1350 cm-1 whose origin is uncertain (CN bonds or disordered sp2 carbon). Thermal stability is not improved upon nitrogen addition (the C:F and C:F:N films both decompose above 200 °C). Dielectric properties (dielectric constant and loss) are only slightly affected by nitrogen doping. The DC transport properties are modified upon nitrogen addition (C:F:N films display a higher resistivity and a supra-linear behaviour at high fields indicative of field-enhanced tunnelling transport).

  17. Polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell; Anthony K.; Jia; Quanxi; Lin; Yuan

    2009-10-20

    A polymer assisted deposition process for deposition of metal oxide films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films and the like. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  18. Polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2008-04-29

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  19. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  20. Polymer-assisted deposition of films

    DOEpatents

    McCleskey,Thomas M.; Burrell,Anthony K.; Jia,Quanxi; Lin,Yuan

    2012-02-28

    A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  1. Ferroelectric thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dinu, Raluca; Vrejoiu, I.; Verardi, P.; Craciun, F.; Dinescu, Maria

    2001-06-01

    Influence of substrate and electrode on the properties of PbZr0.53Ti0.47O3 (PZT) thin films grown by pulsed laser deposition technique (1060 nm wavelength Nd:YAG laser light, 10 ns pulse duration, 10 Hz repetition rate, 0.35 J/pulse, 25 J/cm2 laser fluence, deposition rate about 1 angstrom/pulse) was studied. The substrate temperatures were in the range 380 degree(s)C-400 degree(s)C. Oriented crystalline PZT layers with 1-3 micrometers thickness were deposited on glass substrates plated with Au/Pt/NiCr electrodes, from a PZT commercial target in oxygen reactive atmosphere. The deposited PZT films with perovskite structure were preferentially oriented along the (111) direction as revealed from XRD spectra. Piezoelectric d33 coefficients up to 30 pC/N were obtained on as deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 15 (mu) C/cm2 and a coercive field of 100 kV/cm. A comparison with properties of PZT films deposited using a KrF laser and with SrBi2Ta2O9 (SBT) films is reported.

  2. Liquid phase deposition of electrochromic thin films

    SciTech Connect

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  3. Elastohydrodynamic film thickness measurements with advanced ester, fluorocarbon, and polyphenyl ether lubricants to 589 K (600 F)

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Kannel, J. W.

    1971-01-01

    Elastohydrodynamic (EHD) film thicknesses have been measured, by means of an X-ray technique, under conditions that closely simulate the ball-race contact in advanced turbine engine thrust bearings. The experiments were conducted with a rolling-disk machine using disks which yield a contact zone similar to that in the actual bearing. Both the rolling and spinning motions of the ball relative to the race were simulated by the apparatus. Four lubricants were evaluated at temperatures to 600 F and maximum Hertz stresses to 350,000 psi. The X-ray film thickness data correlated well with observations of surface distress (or lack thereof) in full-scale bearing tests with the same lubricants under similar conditions of temperature and load. The predicted variation of film thickness with speed and viscosity as verified, although the magnitude of measured film thickness was generally one-half to one-third of predicted values. An effect of stress greater than predicted was consistently observed in the higher stress range.

  4. Microwave-enhanced thin-film deposition

    NASA Technical Reports Server (NTRS)

    Chitre, S.

    1984-01-01

    The deposition of semiconducting and insulating thin films at low temperatures using microwave technology was explored. The method of plasma formations, selection of a power source, the design of the microwave plasma cavity, the microwave circuitry, impedance matching, plasma diagnostics, the deposition chamber and the vacuum system were studied.

  5. Ion plating technique improves thin film deposition

    NASA Technical Reports Server (NTRS)

    Mattox, D. M.

    1968-01-01

    Ion plating technique keeps the substrate surface clean until the film is deposited, allows extensive diffusion and chemical reaction, and joins insoluble or incompatible materials. The technique involves the deposition of ions on the substrate surface while it is being bombarded with inert gas ions.

  6. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  7. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  8. Post-Flight Analysis of Selected Fluorocarbon and Other Thin Film Polymer Specimens Flown on MISSE-5

    NASA Technical Reports Server (NTRS)

    DeGroh, Kim; Finckenor, Miria; Minton, Tim; Brunsvold, Amy; Pippin, Gary

    2007-01-01

    Twenty thin film specimens were flown on M1SSE-5 as a cooperative effort between several organizations. This presentation will report results of initial inspections and post-flight measurements of the optical properties and recession of these materials due to the approx.13 month exposure period on the exterior of the International Space Station. These specimens were located on the "anti-solar" side of the MISSE-5 container and received a low number of Equivalent Sun Hours of solar UV exposure. Profilometry and/or ATF measurements will be conducted to determine thickness changes and atomic oxygen-induced recession rates Six of the specimens were covered with thin Kapton films, 0.1 and 0.3 mil in thickness. The 0.1 mil Kapton was almost completely eroded, suggesting that the atomic oxygen fluence is <8 x 10(exp 19) atoms/sq cm, similar to levels experienced during Space Shuttle materials experiments in the 1980's and 1990's. A comparison of results from MISSE-5 and Space Shuttle experiments will be included for those materials common to both the short and long-term exposures.

  9. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  10. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  11. Plasma deposition of aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Catherine, Y.; Talebian, A.

    1988-03-01

    A plasma deposition technique for amorphous aluminum oxide films is discussed. A 450 kHz or 13.56 MHz power supply was used to generate the plasma and the deposition of the film was achieved at low plasma power using trimethyl-aluminum and carbon dioxide reactant sources. It has been found that for the low frequency plasma the growth is strongly dependent upon TMA concentration, indicating that the growth process is mass transport limited. On the other hand using the 13.56 MHz discharge results in a surface controlled growth rate. An increase in the deposition temperature up to 300° C makes the films more dense and lowers their etching rate. FTIR and ESCA measurements showed that oxidation is only completed with high CO2 concentrations and a deposition temperature above 250° C. The dielectric films were found to have a dielectric constant in the range 7.3=2-9 and a refractive index between 1.5 1.8 depending upon deposition conditions.

  12. Photobiomolecular deposition of metallic particles and films

    DOEpatents

    Hu, Zhong-Cheng

    2005-02-08

    The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.

  13. Uniform reflective films deposited on large surfaces

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Specially designed baffle which intercepts varying amounts of the vapor stream from an evaporant source, vacuum deposits films of uniform thickness on large substrates, using a single small area evaporation source. A mirror coated by this method will have a reflectance as high as 82 percent at 1216 angstroms with a variation of only plus/minus 2 percent over the surface.

  14. Effect of fluorocarbon self-assembled monolayer films on sidewall adhesion and friction of surface micromachines with impacting and sliding contact interfaces

    SciTech Connect

    Xiang, H.; Komvopoulos, K.

    2013-06-14

    A self-assembled monolayer film consisting of fluoro-octyltrichlorosilane (FOTS) was vapor-phase deposited on Si(100) substrates and polycrystalline silicon (polysilicon) surface micromachines. The hydrophobic behavior and structural composition of the FOTS film deposited on Si(100) were investigated by goniometry and X-ray photoelectron spectroscopy, respectively. The effects of contact pressure, relative humidity, temperature, and impact/sliding cycles on the adhesive and friction behavior of uncoated and FOTS-coated polysilicon micromachines (referred to as the Si and FOTS/Si micromachines, respectively) were investigated under controlled loading and environmental conditions. FOTS/Si micromachines demonstrated much lower and stable adhesion than Si micromachines due to the highly hydrophobic and conformal FOTS film. Contrary to Si micromachines, sidewall adhesion of FOTS/Si micromachines demonstrated a weak dependence on relative humidity, temperature, and impact cycles. In addition, FOTS/Si micromachines showed low and stable adhesion and low static friction for significantly more sliding cycles than Si micromachines. The adhesive and static friction characteristics of Si and FOTS/Si micromachines are interpreted in the context of physicochemical surface changes, resulting in the increase of the real area of contact and a hydrophobic-to-hydrophilic transition of the surface chemical characteristics caused by nanoscale surface smoothening and the removal of the organic residue (Si micromachines) or the FOTS film (FOTS/Si micromachines) during repetitive impact and oscillatory sliding of the sidewall surfaces.

  15. (Chemically vapor deposited diamond films)

    SciTech Connect

    Clausing, R.E.; Heatherly, L. Jr.

    1990-09-22

    The NATO-ASI on Diamond and Diamond-Like Films and Coatings'' was an opportunity for us to learn the latest research results from ongoing programs in the leading laboratories of the world and relate them to our work. Specific examples are given in the comprehensive report which follows. The meeting format provided an ideal environment to meet and interact with our international counterparts. It is clear that our studies are well regarded, and that we have established an excellent reputation in a short time. New opportunities for collaboration were identified. A panel discussion at the end of the meeting addressed the needs and opportunities in the synthesis of CVD diamond. The key scientific needs are those related to modeling the nucleation and growth processes and to elucidation of the critical roles of atomic hydrogen and the mechanisms of carbon addition to the growing surfaces. The development and more extensive use of in situ diagnostics for both surface and gas phases are important to solving these issues. The more immediate practical questions concern the identification of the growth-rate-limiting steps, the relation of growth parameters to the resulting film structure, and the dependence of properties on structure.

  16. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    SciTech Connect

    Genfa Wu; Anne-Marie Valente; H. Phillips; Haipeng Wang; Andy Wu; T. J. Renk; P Provencio

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV. The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.

  17. Magnetic properties of LCMO deposited films

    NASA Astrophysics Data System (ADS)

    Park, Seung-Iel; Jeong, Kwang Ho; Cho, Young Suk; Kim, Chul Sung

    2002-04-01

    La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO 3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La 0.89Ca 0.11MnO 3, respectively, while the film prepared by sol-gel spin coating was cubic with La 0.7Ca 0.3MnO 3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

  18. water-soluble fluorocarbon coating

    NASA Technical Reports Server (NTRS)

    Nanelli, P.

    1979-01-01

    Water-soluble fluorocarbon proves durable nonpolluting coating for variety of substrates. Coatings can be used on metals, masonry, textiles, paper, and glass, and have superior hardness and flexibility, strong resistance to chemicals fire, and weather.

  19. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  20. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2007-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  1. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  2. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  3. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  4. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  5. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  6. Glow discharge plasma deposition of thin films

    DOEpatents

    Weakliem, Herbert A.; Vossen, Jr., John L.

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  7. Pulsed Laser Deposition of Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Scarisoreanu, N. D.; Filipescu, M. (Morar); Epurescu, G. N.; Matei, D. G.; Verardi, P.; Craciun, F.; Dinescu, M.

    2004-10-01

    Pulsed Laser Deposition (PLD) emerged as an attractive technique for growth of thin films with different properties as metals, semiconductors, ferroelectrics, biocompatibles, polymers, etc., due to its important advantages: (i) the stoichiometric transfer of a complex composition from target to film and film crystallization at lower substrate temperature respect to other techniques (due to the high energy of species in the laser plasma); (ii) single step process, synthesis and deposition; (iii) creation in plasma of species impossible to be obtained by other processes; (iv) possibility of "in situ" heterostructure deposition using a multi-target system, etc. Simple or complex oxides are between the materials widely studied for their applications. PMN is the most known relaxor ferroelectric material: it exhibits a high dielectric constant value around the (diffuse) maximum phase transition temperature, of more than 35 000 in bulk form. Other oxides as lead zirconate titanate, Pb(ZrxTi1-x)O3 simple or La doped exhibit exceptional properties as large remanent polarization, high dielectric permittivity, high piezoelectric coefficient. SrBi2Ta2O9 (SBT) is characterized by a high "fatigue resistance" (constant remanent polarization until 1012 switching cycles), low imprint, and low leakage current. The physical properties of zirconium oxide (or zirconia) -- high strength, stability at high temperatures -- make it useful for applications involving gas sensors, corrosion or heat resistant mechanical parts, high refractive index optical coatings. Of particular interest is its use as an alternative gate dielectric in metal-oxide-semiconductor (MOS) devices or capacitor in dynamic random access memory (DRAM) chips. All these oxides have been deposited by laser ablation in oxygen reactive atmosphere and some of their properties will be presented in this paper.

  8. Effect of electric field on spray deposited zinc sulphide films

    NASA Astrophysics Data System (ADS)

    Swami, Sanjay Kumar; Chaturvedi, Neha; Kumar, Anuj; Dutta, Viresh

    2015-06-01

    Zinc sulphide (ZnS) thin films were deposited on soda lime glass substrate using spray technique with a DC voltage (300 V) applied to the nozzle to create an electric field during the spray deposition. Spray deposition of ZnS film under an electric field, resulted in change of the surface morphology, transmission, and enhancement in crystallinity of the film. The band gap of the spray deposited ZnS film was found to be 3.62 eV. Transparent ZnS film with the benefit of large area and low cost spray technique can be suitable for solar cell window layer application.

  9. Magnetic thin film deposition with pulsed magnetron sputtering: deposition rate and film thickness distribution

    NASA Astrophysics Data System (ADS)

    Ozimek, M.; Wilczyński, W.; Szubzda, B.

    2016-02-01

    The goal of conducted study was an experimental determining the relations between technological parameters of magnetron sputtering process on deposition rate (R) and thickness uniformity of magnetic thin films. Planar Ni79Fei6Mo5 target with a diameter of 100 mm was sputtered in argon (Ar) atmosphere. Deposition rate was measured in a function of gas pressure, target power and target-substrate distance. The highest value of R≈280 nmmin-1. The obtained results in deposition rate of magnetic film were compared to deposition rate of cooper (Cu), aluminum (Al), titanium (Ti) and titanium oxide (TiOx) and the deposition rate of Ni-Fe alloy were higher that Al and Ti. The film thickness distribution was measured for radial distance from the target centre ranging up to 60 mm and target-substrate distance ranging form 70 to 115 mm. Among others it was stated that for the larger value of target-substrate distance the larger uniform of film thickness are obtained.

  10. Electro-deposition of superconductor oxide films

    DOEpatents

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  11. Electrophoretically-deposited solid film lubricants

    SciTech Connect

    Dugger, M.T.; Panitz, J.K.J.; Vanecek, C.W.

    1995-04-01

    An aqueous-based process that uses electrophoresis to attract powdered lubricant in suspension to a charged target was developed. The deposition process yields coatings with low friction, complies with environmental safety regulations, requires minimal equipment, and has several advantages over processes involving organic binders or vacuum techniques. This work focuses on development of the deposition process, includes an analysis of the friction coefficient of the material in sliding contact with stainless steel under a range of conditions, and a functional evaluation of coating performance in a precision mechanical device application. Results show that solid lubricant films with friction coefficients as low as 0.03 can be produced. A 0.03 friction coefficient is superior to solid lubricants with binder systems and is comparable to friction coefficients generated with more costly vacuum techniques.

  12. Preparation of Thick Magnet Films by the Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Sugimoto, Satoshi

    The aerosol deposition method (ADM) is effective for the preparation of thick films with high deposition rate. We applied this method to fabricate NiZn ferrite or Sm-Fe-N films, which are used for microwave absorbers or permanent magnets, respectively. In this article, the magnetic properties of Sm-Fe-N thick films fabricated by the ADM are introduced and the possibility of the ADM for the fabrication process with high deposition rate is discussed.

  13. Chemical vapor deposition of amorphous semiconductor films. Final subcontract report

    SciTech Connect

    Rocheleau, R.E.

    1984-12-01

    Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

  14. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  15. Real-Time Deposition Monitor for Ultrathin Conductive Films

    NASA Technical Reports Server (NTRS)

    Hines, Jacqueline

    2011-01-01

    A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a

  16. Room-Temperature Deposition of NbN Superconducting Films

    NASA Technical Reports Server (NTRS)

    Thakoor, S.; Lamb, J. L.; Thakoor, A. P.; Khanna, S. K.

    1986-01-01

    Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

  17. SnS2 Thin Film Deposition by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Yahia Jaber, Abdallah; Noaiman Alamri, Saleh; Salah Aida, Mohammed

    2012-06-01

    Tin disulfide (SnS2) thin films have been synthesized using a simplified spray pyrolysis technique using a perfume atomizer. The films were deposited using two different solutions prepared by the dilution of SnCl2 and thiourea in distilled water and in methanol. The obtained films have a microcrystalline structure. The film deposited using methanol as the solvent is nearly stochiometric SnS2 with a spinel phase having a (001) preferential orientation. The film prepared with an aqueous solution is Sn-rich. Scanning electronic microscopy (SEM) images reveal that the film deposited with the aqueous solution is rough and is formed with large wires. However, the film deposited with methanol is dense and smooth. Conductivity measurements indicate that the aqueous solution leads to an n-type semiconductor, while methanol leads to a p-type semiconductor.

  18. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    NASA Astrophysics Data System (ADS)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  19. Preparation of Epoxy Resin Thin Film by Electroless Deposition Method

    NASA Astrophysics Data System (ADS)

    Fukui, Hitoshi; Hirai, Makoto; Shinagawa, Tsutomu; Kobayashi, Yasuyuki; Chigane, Masaya; Fujiwara, Yutaka; Fujita, Naoyuki

    The electrodeposition coating process, which is a polymer film deposition method using water electrolysis, is widely used for automobile body primers. Recently this process is being used in the insulating polymer films deposition for the microelectromechanical system (MEMS) or micro electric components. However, this process has difficulty in depositing polymer film on complex shapes and non-conductive surfaces. In this paper, we demonstrate that epoxy resin thin films used extensively as insulating polymer films were successfully deposited using the electroless chemical reaction in aqueous solution on a non-conductive surface and high aspect glass tube. The substrates catalyzed using a commercialized three-step Sn/Ag/Pd activation process were immersed in the reaction solution containing water-soluble resin and NO3- ion, reducing agent (DMAB). The pH near the substrate rose when NO3- was reduced by released electrons from DMAB. Water-soluble resin combined with OH- hence, polymer thin film was deposited by the electroless deposition reaction. By FE-SEM and FT-IR measurement, it was clear that the conformal and dense epoxy resin films were deposited. Using the present method, epoxy films could be deposited on the surface of a high aspect ratio glass tube 50 mm in length and φ3 in inner diameter. These films had high insulation resistivity of 108∼1011Ωm with applied voltage of 250 V.

  20. Thick-Film Yttrium Iron Garnet Coatings via Aerosol Deposition

    NASA Astrophysics Data System (ADS)

    Johnson, Scooter D.; Glaser, Evan R.; Cheng, Shu-Fan; Eddy, Charles R.; Kub, Fritz; Gorzkowski, Edward P.

    2016-03-01

    Aerosol deposition is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95 pct of the theoretical value. The primary advantage of aerosol deposition is that the deposition takes place entirely at room temperature, thereby enabling film growth in material systems with disparate melting temperatures. We show representative characterization results of yttrium iron garnet thick films deposited onto a <111> gadolinium gallium garnet substrate by aerosol deposition using scanning electron microscopy, X-ray diffraction, profilometry, vibrating sample magnetometry, and ferromagnetic resonance. To further elucidate the effect of density and grain size on the magnetic properties, we perform post-deposition annealing of the films to study the effect on the structural and magnetic properties of the films. Our results indicate that our system can successfully deposit dense, thick yttrium iron garnet films and that with moderate annealing the films can achieve a ferromagnetic resonance linewidth comparable to that reported for polycrystalline films deposited by other higher temperature growth techniques.

  1. Spraylon fluorocarbon encapsulation for silicon solar cell arrays, phase 3

    NASA Technical Reports Server (NTRS)

    Naes, L. G.

    1978-01-01

    The liquid transparent film-forming, fluorocarbon, Spraylon, a protective coating for terrestrial solar cell modules was evaluated. Two modules were completed and field tested. Problems developed early in the field testing which led to the shortened test period, specifically, lifting of the antireflection coating, followed in some areas by complete film delamination. It is believed that although these problems were certainly induced by the presence of the SPRAYLON film, they were not failures of the material per se. Instead, assembly procedures, module design, and cell coating quality should be evaluated to determine cause of failure.

  2. Morphology dependent electrochemical performance of sputter deposited Sn thin films

    SciTech Connect

    Nimisha, C.S.; Venkatesh, G.; Rao, K. Yellareswara; Rao, G. Mohan; Munichandraiah, N.

    2012-08-15

    Graphical abstract: Smooth homogenous anode surface results in better electrochemical performance in terms of capacity and cycle life. Highlights: ► Controlling rate of deposition of Sn thin films for different surface morphology. ► Higher deposition rate results in poor capacity retention. ► Lower deposition rate of 0.25 nm s{sup −1} helps in higher capacity retention. ► Electrochemical performance correlated homogeneity and interparticle contact area. -- Abstract: This study deals with tailoring of the surface morphology, microstructure, and electrochemical properties of Sn thin films deposited by magnetron sputtering with different deposition rates. Scanning electron microscopy and atomic force microscopy are used to characterize the film surface morphology. Electrochemical properties of Sn thin film are measured and compared by cyclic voltammetry and charge–discharge cycle data at a constant current density. Sn thin film fabricated with a higher deposition rate exhibited an initial discharge capacity of 798 mAh g{sup −1} but reduced to 94 mAh g{sup −1} at 30th cycle. Film deposited with lower deposition rate delivered 770 mAh g{sup −1} during 1st cycle with improved capacity retention of 521 mAh g{sup −1} on 30th cycle. Comparison of electrochemical performances of these films has revealed important distinctions, which are associated with the surface morphology and hence on rate of deposition.

  3. Formation of diamond nanoparticle thin films by electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Goto, Yosuke; Ohishi, Fujio; Tanaka, Kuniaki; Usui, Hiroaki

    2016-03-01

    Thin films of diamond nanoparticles were prepared by electrophoretic deposition (EPD) using 0.5 wt % dispersions in water, ethanol, and 2-propanol. The film growth rate increased with increasing voltage applied to the electrodes. However, an excessive increase in voltage caused the degradation of film morphology. The optimum voltage was 4 V with an electrode separation of 5 mm. The film growth rate was higher in organic solvents than in water. The deposited film had a smooth surface with an average surface roughness comparable to the size of primary particles of the source material. It is notable that the EPD films had a considerably higher physical stability than spin-coated and cast films. The stability was further improved by thermally annealing the films. IR analysis revealed that the diamond nanoparticles have carboxy and amino groups on their surfaces. It is considered that the stability of the EPD films originate from a chemical reaction between these functional groups.

  4. AlN thin films prepared by DC arc deposition

    NASA Astrophysics Data System (ADS)

    Liang, Hai-feng; Yan, Yi-xin; Miao, Shu-fan

    2006-02-01

    Many researchers are interested in AlN films because of their novel thermal, chemical, mechanical, acoustic, and optical properties. Many methodsincluding such as DC/RF sputtering, chemical vapor deposition (CVD), laser chemical vapor deposition(LCVD), molecular beam epitaxy (MBE), thermal vapor deposition, can be used to prepare AlN films. In this paper, a new method, DC arc deposition, is used to deposite AlN films. It is an anti-reflective, protective film on optical elements. FTIR are used to determine the ALN structure and measure the transmittance spectrum. Ellipsometry is used to determine the films' refractive index, extinction index and thickness. The films' anti-wear properties are tested by pin-on-disc way and the anti-corrosion(anti-acid, anti-alkali, anti-salt) properties are also tested. The results show that the films is AlN films by the 670cm -1 typical peak, the films' extinction index is near to zero in the range of visible and infrared waveband, the films' refractive index is varied from 1.7 to 2.1 at range of visible and infrared waveband. The films have better anti-wear, anti-acid and anti-alkali properties, but their anti-salt properties are not good.

  5. Optical circular dichroism of vacuum-deposited film stacks

    NASA Astrophysics Data System (ADS)

    Fan, B.; Vithana, H. K. M.; Kralik, J. C.; Faris, S. M.

    1998-02-01

    We report on optical circular dichroism of chiral multilayer SiO x films obtained by a novel vacuum deposition technique. The film layers were deposited at an oblique incidence angle to render them optically anisotropic, and were stacked such that the optic axes of the layers spiral in a helical fashion about the substrate normal. The resulting film stacks display both wavelength and polarization selectivity, in analogy with organic cholesteric liquid crystals aligned in the planar texture. Reflectance spectra of two films of opposite chirality are presented. Both film stacks are tuned to reflect in the visible and were prepared using obliquely deposited SiO x. Calculated spectra using a Berreman's 4×4 matrix approach agree well with the experimental findings. It is concluded that vacuum-deposited chiral film stacks hold promise for use as high-efficiency polarizers and other novel optical components.

  6. Deposition of diamondlike films by electron cyclotron resonance microwave plasmas

    NASA Technical Reports Server (NTRS)

    Pool, F. S.; Shing, Y. H.

    1990-01-01

    Hard a-C:H films have been deposited through electron cyclotron resonance (ECR) microwave plasma decomposition of CH4 diluted with H2 gas. It has been found that hard diamondlike films could only be produced under a RF-induced negative self-bias of the substrate stage. Raman spectra indicate the deposition of two distinct film types: one film type exhibiting well-defined bands at 1360 and 1580/cm and another displaying a broad Raman peak centered at approximately 1500/cm. Variation of the mirror magnetic-field profile of the ECR system was examined, demonstrating the manipulation of film morphology through the extraction of different ion energies.

  7. Research of boron films deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Zhou, Jie; Wang, Linjun; Huang, Jian; Tang, Ke; Ren, Bing; Yao, Beiling; Xia, Yiben

    2013-09-01

    Semiconductor detector that incorporate neutron reactive material within the same detector demonstrates a new method for neutron dosimetry and boron neutron reactive therapy seems to be a promising treatment. Boron films were deposited on single crystalline silicon, glass, and CVD diamond film by magnetron sputtering, close-space sublimation and vacuum evaporation. The properties of the samples were characterized by SEM, which shows vacuum evaporation method is suitable for depositing high quality boron films.

  8. Precursors for the polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2013-09-10

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  9. Niobium Thin Film Properties Affected by Deposition Energy during Vacuum Deposition

    SciTech Connect

    Genfa Wu; H. Phillips; Ronald Sundelin; Anne-Marie Valente

    2003-05-01

    In order to understand and improve the super-conducting performance of niobium thin films at cryogenic temperatures, an energetic vacuum deposition system has been developed to study deposition energy effects on the properties of niobium thin films on various substrates. Ultra high vacuum avoids the gaseous inclusions in thin films commonly seen in sputtering deposition. A retarding field energy analyzer is used to measure the kinetic energy of niobium ions at the substrate location. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio (RRR) of the niobium thin films at several deposition energies are obtained together with crystal orientation measurements and atomic force microscope (AFM) inspection, and the results show that there exists a preferred deposition energy around 115eV (the average deposition energy 64 eV plus the 51 V bias voltage).

  10. Properties of vacuum arc deposited amorphous hard carbon films

    SciTech Connect

    Anders, S.; Anders, A.; Raoux, S.

    1995-04-01

    Amorphous hard carbon films formed by vacuum arc deposition are hydrogen-free, dense, and very hard. The properties of amorphous hard carbon films depend strongly on the energy of the incident ions. A technique which is called Plasma Immersion Ion Implantation can be applied to vacuum arc deposition of amorphous hard carbon films to influence the ion energy. The authors have studied the influence of the ion energy on the elastic modulus determined by an ultrasonic method, and have measured the optical gap for films with the highest sp{sup 3} content they have obtained so far with this deposition technique. The results show an elastic modulus close to that of diamond, and an optical gap of 2.1 eV which is much greater than for amorphous hard carbon films deposited by other techniques.

  11. Deposition and investigation of lanthanum cerium hexaboride thin films

    NASA Astrophysics Data System (ADS)

    Kuzanyan, A. S.; Harutyunyan, S. R.; Vardanyan, V. O.; Badalyan, G. R.; Petrosyan, V. A.; Kuzanyan, V. S.; Petrosyan, S. I.; Karapetyan, V. E.; Wood, K. S.; Wu, H.-D.; Gulian, A. M.

    2006-09-01

    Thin films of lanthanum-cerium hexaboride, the promising thermoelectric material for low-temperature applications, are deposited on various substrates by the electron-beam evaporation, pulsed laser deposition and magnetron sputtering. The influence of the deposition conditions on the films X-ray characteristics, composition, microstructure and physical properties, such as the resistivity and Seebeck coefficient, is studied. The preferred (100) orientation of all films is obtained from XRD traces. In the range of 780-800 °C deposition temperature the highest intensity of diffractions peaks and the highest degree of the preferred orientation are observed. The temperature dependence of the resistivity and the Seebeck coefficient of films are investigated in the temperature range of 4-300 K. The features appropriate to Kondo effect in the dependences ρ( T) and S( T) are detected at temperatures below 20 K. Interplay between the value of the Seebeck coefficient, metallic parameters and Kondo scattering of investigated films is discussed.

  12. Polyimide films from vapor deposition: toward high strength, NIF capsules

    SciTech Connect

    Cook, R C; Hsieh, E J; Letts, S A; Roberts, C C; Saculla, M

    1998-10-16

    The focus of recent efforts at LLNL has been to demonstrate that vapor deposition processing is a suitable technique to form polyimide fnms with sufficient strength for current national ignition facility target specifications. Production of polyimide films with controlled stoichiometry was acccomplished by: 1) depositing a novel co-functional monomer and 2) matching the vapor pressure of each monomer in PMDA/ODA co-depositions. The sublimation and deposition rate for the monomers was determined over a range of temperatures. Polyimide films with thicknesses up to 30 p.m were fabricated. Composition, structure and strength were assessed using FTIR, SEM and biaxial burst testing. The best films had a tensile strength of approximately 100 MPa. A qualitative relationship between the stoichiometry and tensile strength of the film was demonstrated. Thin films ({approximately}3.5 {micro}m) were typically smooth with an rms of 1.5 nm.

  13. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I–V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  14. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  15. Sputtering deposition and characterization of ultrathin amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  16. Off-axis sputter deposition of thin films

    SciTech Connect

    Capuano, L.A.; Newman, N. )

    1990-01-01

    Currently there are several techniques for making high Tc thin films, e.g., sputter deposition, laser ablation, coevaporation (including MBE), chemical vapor deposition and solution coating/pyrolysis. Of these techniques, the authors have demonstrated that high-pressure in-situ off-axis rf-magnetron sputter deposition is a simple, relatively inexpensive process capable of reproducibly yielding YBCO superconducting thin films with excellent surface resistance properties. This article describes the off-axis technique, the basic equipment requirements and the performance characteristics of high Tc superconductor films produced using this technique.

  17. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  18. Electrical Field Effects in Phthalocyanine Film Growth by Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Banks, Curtis E.; Zhu, Shen; Frazier, Donald O.; Penn, Benjamin; Abdeldayem, Hossin; Hicks, Roslin; Sarkisov, Sergey

    1999-01-01

    Phthalocyanine, an organic material, is a very good candidate for non-linear optical application, such as high-speed switching and optical storage devices. Phthalocyanine films have been synthesized by vapor deposition on quartz substrates. Some substrates were coated with a very thin gold film for introducing electrical field. These films have been characterized by surface morphology, material structure, chemical and thermal stability, non-linear optical parameters, and electrical behaviors. The films have excellent chemical and optical stability. However, the surface of these films grown without electrical field shows flower-like morphology. When films are deposited under an electrical field ( an aligned structure is revealed on the surface. A comparison of the optical and electrical properties and the growth mechanism for these films grown with and without an electrical field will be discussed.

  19. Deposition, Characterization, And Simulation Of Thin Films With Form Birefringence

    NASA Astrophysics Data System (ADS)

    Jacobson, M. R.; Horowitz, F.; Liao, Bangjun

    1984-12-01

    Birefringence in optical thin films due to structure on a scale large compared to atoms but small compared to optical wavelengths, known as form birefringence (FB), was observed almost a century ago. More recently, studies of obliquely deposited metal films stimulated new interest in birefringent films. The link between structure, which is predominantly columnar in evaporated thin films, and birefringence has been conclusively demonstrated through ellipsometric measurement and modeling. Direct measurements of form birefringence are especially tedious in tilted films, since essentially four quantities must be derived: three indices of refraction and the film thickness. Clearly, four measurements are required; Horowitz' used an ellipsometric method to perform such measurements on a zirconium oxide (Zr02) film. Later, a 4.6-μm-thick film of Zr02 was obliquely deposited; spectrophotometric measurements revealed its utility as a half-wave plate. A parallel effort directed at understanding FB films through computer simulations has been undertaken by Sikkens and Liao. These simulations can be specialized to include defects, epitaxy, and anisotropic surface mobility. Applications of obliquely deposited FB films of familiar thin film materials can be anticipated if their structure and performance can be more thoroughly understood.

  20. Stress development and relaxation during sputter deposition film growth

    NASA Astrophysics Data System (ADS)

    Meng, Fanyu

    The stress development and relaxation of magnetron sputtered copper and amorphous-silicon (a-Si) films at room temperature are studied. Samples were prepared as a function of pressure and deposition power. In-situ stress measurements with the wafer curvature method were made using a helium neon gas laser system with a 10mm beam splitter. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to perform post-growth microstructural and surface analysis. SEM cross-section analysis was used to determine the final film thickness. Phase compositions were studied by X-ray diffraction. The growth rates of copper films decreased with increasing pressure. Copper film stress development followed a non-monotonic compressive, tensile then tensile relaxation curve. In order to investigate further the nature of the stress relaxation, stress curves both after deposition was stopped and after it is restarted were also measured. Correlations between growth rate and pressure were also observed in a-Si sputter deposition. In some contrast to what was observed for Cu deposition, stress measurement during a-Si deposition showed a trend of tensile development and relaxation at all pressures studied. In a new approach to understanding stress relaxation during film growth, an acoustic emission (AE) system is introduced to measure the AE energy during sputter deposition. Evidence shows a certain relation between the strain energy of films calculated using the measured stresses and AE energy recorded during the deposition. AE energy occurs immediately after deposition starts and follows the trend of stress development (increasing hits and energies) and relaxation (decreasing hits and energies). No further signal was detected after deposition, matching the results of stress curve measurements showing that stress magnitude after deposition stays at the same level as before deposition stopped. Results also show a lower AE energy magnitude with increasing deposition

  1. Fluorinated diamond bonded in fluorocarbon resin

    DOEpatents

    Taylor, Gene W.

    1982-01-01

    By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

  2. Plasma sputtering system for deposition of thin film combinatorial libraries

    NASA Astrophysics Data System (ADS)

    Cooper, James S.; Zhang, Guanghai; McGinn, Paul J.

    2005-06-01

    The design of a plasma sputtering system for the deposition of combinatorial libraries is described. A rotating carousel is used to position shadow masks between the targets and the substrate. Multilayer films are built up by depositing sequentially through various masks. Postdeposition annealing is used to promote interdiffusion of the layered structures. Either discrete or compositional gradient libraries can be deposited in this system. Samples appropriate for characterization with a scanning electrochemical microscope or a multichannel microelectrode array system can be produced. The properties of some deposited Pt-Ru films for fuel cell applications are described.

  3. Helical structured thin films deposited at a glancing angle

    NASA Astrophysics Data System (ADS)

    Jen, Yi-Jun; Jheng, Ci-Yao; Chan, San; Tseng, Chien-Hoa

    2015-08-01

    Gold nanohelical structured thin films (NHFs) were tried to be deposited on a glass substrate using glancing angle deposition technique. At a deposition angle of 89°, gold NHFs were fabricated by introducing liquid nitrogen to flow under the backside of BK7 glass substrate holder. The temperature of substrate was reduced to be less than -140°C before deposition. The spin rate was controlled with respect to the deposition rate to grow three different sized nanohelices. The morphology and optical properties of Au NHFs were measured and compared between the three samples. The strong g-factor implies high sensitivity of deposited helixes in biosensing in the future.

  4. Study of the adhesion of thin plasma fluorocarbon coatings resisting plastic deformation for stent applications

    NASA Astrophysics Data System (ADS)

    Lewis, F.; Horny, P.; Hale, P.; Turgeon, S.; Tatoulian, M.; Mantovani, D.

    2008-02-01

    Metallic intravascular stents are medical devices (316L stainless steel) used to support the narrowed lumen of atherosclerotic stenosed arteries. Despite the success of bare metal stents, restenosis remains the main complication after 3-6 months of implantation. To reduce the restenosis rate of bare metal stents, stent coating is an interesting alternative. Firstly, it allows the modification of the surface properties, which is in contact with the biological environment. Secondly, the coating could eventually act as a carrier for drug immobilization and release. Moreover, the in vivo stent implantation requires in situ stent expansion. This mandatory step generates local plastic deformation of up to 25% and may cause coating failures such as cracking and delamination. Fluorocarbon films were selected in this study as a potential stent coating, mainly due to their chemical inertness, high hydrophobicity, protein retention capabilities and thromboresistance properties. The aim of this study was to investigate the adhesion properties of fluorocarbon films of three different thicknesses deposited by plasma polymerization in C2F6/H2 on 316L stainless steel substrates. A previously developed small punch test was used to deform the coated samples. According to atomic force microscopy, field emission scanning electron microscopy and x-ray photoelectron spectroscopy characterizations, among the coatings with different thicknesses studied, only those with a thickness of 36 nm exhibited the required cohesion and interfacial adhesion to resist the stent expansion without cracking or delaminating. Otherwise, cracks were detected in the coatings having thicknesses equal or superior to 100 nm, indicating a lack of cohesion.

  5. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  6. Magnetron deposition of TCO films using ion beam

    NASA Astrophysics Data System (ADS)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  7. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  8. Fundamentals of sol-gel film deposition

    SciTech Connect

    Brinker, C.J.; Anderson, M.T.; Bohuszewicz, T.; Ganguli, R.; Lu, Y.; Lu, M.

    1996-12-31

    Results appear to confirm the concept of surfactant-templating of thin film mesostructures. Final film pore structure depends on starting surfactant and water concentrations and process time scale (governed by evaporation rate). Surfactant ordering at substrate-film and film-vapor interfaces orients the porosity of adjoining films, leading to graded structures. SAW experiments show that depending on processing conditions, the porosity may be open or closed (restricted). Open porosity is monosized. Upon pyrolysis, lamellar structures collapse, while the hexagonal structures persist; when both hexagonal and lamellar structures are present, the hexagonal may serve to pillar the lamellar, avoiding its complete collapse. Thick lamellar films can be prepared because the surfactant mechanically decouples stress development in adjoining layers. Upon drying and heating, each individual layer can shrink due to continuing condensation reactions without accumulating stress. During surfactant pyrolysis, the layers coalesce to form a thick crack-free layer. Formation of closed porosity films is discussed.

  9. Deposition of diamond-like films by ECR microwave plasma

    NASA Technical Reports Server (NTRS)

    Shing, Yuh-Han (Inventor); Pool, Frederick S. (Inventor)

    1995-01-01

    Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

  10. Epitaxial Zinc Oxide Semiconductor Film deposited on Gallium Nitride Substrate

    NASA Astrophysics Data System (ADS)

    McMaster, Michael; Oder, Tom

    2011-04-01

    Zinc oxide (ZnO) is a wide bandgap semiconductor which is very promising for making efficient electronic and optical devices. The goal of this research was to produce high quality ZnO film on gallium nitride (GaN) substrate by optimizing the substrate temperature. The GaN substrates were chemically cleaned and mounted on a ceramic heater and loaded into a vacuum deposition chamber that was pumped down to a base pressure of 3 x 10-7 Torr. The film deposition was preceded by a 30 minute thermal desorption carried in vacuum at 500 ^oC. The ZnO thin film was then sputter-deposited using an O2/Ar gas mixture onto GaN substrates heated at temperatures varying from 20 ^oC to 500 ^oC. Post-deposition annealing was done in a rapid thermal processor at 900 ^oC for 5 min in an ultrapure N2 ambient to improve the crystal quality of the films. The films were then optically characterized using photoluminescence (PL) measurement with a UV laser excitation. Our measurements reveal that ZnO films deposited on GaN substrate held at 200 ^oC gave the best film with the highest luminous intensity, with a peak energy of 3.28 eV and a full width half maximum of 87.4 nm. Results from low temperature (10 K) PL measurements and from x-ray diffraction will also be presented.

  11. Gadolinium nitride films deposited using a PEALD based process

    NASA Astrophysics Data System (ADS)

    Fang, Ziwen; Williams, Paul A.; Odedra, Rajesh; Jeon, Hyeongtag; Potter, Richard J.

    2012-01-01

    Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp) 3} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 °C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 °C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (˜5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp) 3, it was still possible to obtain smooth (Ra.=˜0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported.

  12. Infrared sensor for CVD deposition of dielectric films

    SciTech Connect

    Niemczyk, T.M.; Franke, J.E.; Zhang, S.; Haaland, D.M.

    1994-06-01

    Infrared emission (IRE) spectra were obtained from two borophosphosilicate glass (BPSG) thin-film sample sets. The first set consisted of 21 films deposited on undoped silicon wafers, and the second set consisted of 9 films deposited on patterned and doped (product) wafers. The IRE data were empirically modeled using partial least-squares calibration to simultaneously quantify four BPSG thin-film properties. The standard errors of the determinations when modeling the 21 monitor wafers were film thickness, and 1.9{degree}C for temperature. The standard errors of the determinations based on the product wafers were 0.13 wt % each for B and P content, 120 {angstrom} for film thickness, and 5.9 C for temperature.

  13. Characterization of Nanoporous WO3 Films Grown via Ballistic Deposition

    SciTech Connect

    Smid, Bretislav; Li, Zhenjun; Dohnalkova, Alice; Arey, Bruce W.; Smith, R. Scott; Matolin, Vladimir; Kay, Bruce D.; Dohnalek, Zdenek

    2012-05-17

    We report on the preparation and characterization of high surface area, supported nanoporous tungsten oxide films prepared under different conditions on polished polycrystalline Ta and Pt(111) substrates via direct sublimation of monodispersed gas phase of cyclic (WO3)3 clusters. Scanning Electron Microscopy and Transmission Electron Microscopy were used to investigate the film morphology on a nanometer scale. The films consist of arrays of separated filaments that are amorphous. The chemical composition and the thermal stability of the films were investigated by means of X-ray Photoelectron Spectroscopy. The surface area and the distribution of binding sites on the films are measured as functions of growth temperature, deposition angle, and annealing conditions using temperature programmed desorption of Kr. Films deposited at 20 K and at an incident angle of 65{sup o} from substrate normal display the greatest specific surface area of {approx}560 m2/g.

  14. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  15. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  16. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  17. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    SciTech Connect

    Singaravelu, Senthil R.; Klopf, John M.; Schriver, Kenneth E.; Park, HyeKyoung; Kelley, Michael J.; Haglund, Jr., Richard F.

    2013-08-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  18. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  19. Vacuum deposition of stoichiometric crystalline PbS films: The effect of sulfurizing environment during deposition

    NASA Astrophysics Data System (ADS)

    Singh, B. P.; Kumar, R.; Kumar, A.; Tyagi, R. C.

    2015-10-01

    Thin film of lead sulfide (PbS) was deposited onto highly cleaned glass and quartz substrates using a vacuum thermal evaporation technique. The effect of the sulfurizing environment on the growth and properties of vacuum-deposited PbS thin film was studied. The ambient sulfurizing environment was created by thermal decomposition of thiourea inside the vacuum chamber during deposition to maintain the stoichiometry and quality of the PbS film. The sulfurizing gas H2S, produced in the thermal decomposition of the solid sulfur containing thiourea readily combines with the cations (Pb2+) without leaving any anions (S2-) at the substrates and also has not produced any excess of sulfur at the substrates. The deposited film was characterized by optical spectroscopy, x-ray diffraction patterns, scanning electron micrographs with energy dispersive analysis of x-rays, and atomic force micrographs. The physical characterization of the deposited PbS film revealed that the surface of film grown in the sulfurizing environment improved and contained more stoichiometric sulfur in comparison to film deposited without the sulfurizing environment.

  20. Development of a Co-deposition method for Deposition of Low-Contamination Pyrite Thin Films

    NASA Astrophysics Data System (ADS)

    Walimbe, Aditya

    Pyrite is a 0.95 eV bandgap semiconductor which is purported to have great potential in widespread, low--cost photovoltaic cells. A thorough material selection process was used in the design of a pyrite sequential vapor deposition chamber aimed at reducing and possibly eliminating contamination during thin film growth. The design process focused on identifying materials that do not produce volatile components when exposed to high temperatures and high sulfur pressures. Once the materials were identified and design was completed, the ultra--high vacuum growth system was constructed and tested. Pyrite thin films were deposited using the upgraded sequential vapor deposition chamber by varying the substrate temperature from 250°C to 420°C during deposition, keeping sulfur pressure constant at 1 Torr. Secondary Ion Mass Spectrometry (SIMS) results showed that all contaminants in the films were reduced in concentration by orders of magnitude from those grown with the previous system. Characterization techniques of Rutherford Back--scattering Spectrometry (RBS), X--Ray Diffraction (XRD), Raman Spectroscopy, Optical Profilometry and UV/Vis/Near--IR Spectroscopy were performed on the deposited thin films. The results indicate that stoichiometric ratio of S:Fe, structural--quality (epitaxy), optical roughness and percentage of pyrite in the deposited thin films improve with increase in deposition temperature. A Tauc plot of the optical measurements indicates that the pyrite thin films have a bandgap of 0.94 eV.

  1. Anomalous hysteresis properties of iron films deposited on liquid surfaces

    NASA Astrophysics Data System (ADS)

    Ye, Quan-Lin; Feng, Chun-Mu; Xu, Xiao-Jun; Jin, Jin-Sheng; Xia, A.-Gen; Ye, Gao-Xiang

    2005-07-01

    A nearly free sustained iron film system, deposited on silicone oil surfaces by vapor-phase deposition method, has been fabricated and its crystal structure as well as magnetic properties has been studied. Both the temperature-dependent coercivity Hc(T) and exchange anisotropy field HE(T) of the iron films possess a maximum peak around the critical temperature Tcrit=10-15 and 4K, respectively. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase below freezing temperature Tf=30-50K.

  2. Measuring Thicknesses Of Vacuum-Deposited Organic Thin Films

    NASA Technical Reports Server (NTRS)

    David, Carey E.

    1996-01-01

    Method of measuring thickness of thin organic liquid film deposited in vacuum involves use of quartz-crystal monitor (QCM) calibrated by use of witness plate that has, in turn, calibrated by measurement of absorption of infrared light in deposited material. Present procedure somewhat tedious, but once calibration accomplished, thicknesses of organic liquid deposits monitored in real time and in situ by use of QCM.

  3. Electrochemical deposition of subnanometer Ni films on TiN.

    PubMed

    Vanpaemel, Johannes; Sugiura, Masahito; Cuypers, Daniel; van der Veen, Marleen H; De Gendt, Stefan; Vereecken, Philippe M

    2014-03-01

    In this paper, we show the electrochemical deposition of a subnanometer film of nickel (Ni) on top of titanium nitride (TiN). We exploit the concept of cluster growth inhibition to enhance the nucleation of new nuclei on the TiN substrate. By deliberately using an unbuffered electrolyte solution, the degree of nucleation is enhanced as growth is inhibited more strongly. This results in a very high particle density and therefore an ultralow coalescence thickness. To prevent the termination of Ni deposition that typically occurs in unbuffered solutions, the concentration of Ni(2+) in solution was increased. We have verified with RBS and ICP-MS that the deposition of Ni on the surface in this case did not terminate. Furthermore, annealing experiments were used to visualize the closed nature of the Ni film. The closure of the deposited film was also confirmed by TOF-SIMS measurements and occurs when the film thickness is still in the subnanometer regime. The ultrathin Ni film was found to be an excellent catalyst for carbon nanotube growth on conductive substrates and can also be applied as a seed layer for bulk deposition of a smooth Ni film on TiN. PMID:24520857

  4. Vapor-gel processing and applications in oxide film depositions

    SciTech Connect

    Chour, K.W.; Xu, R.; Takada, T.

    1995-12-31

    The Vapor-gel processing of oxide films is discussed for the prototypic system of LiTa(OBut{sup n}){sub 6}-LiTaO{sub 3}. It is found that the hydrolysis-polycondensation reaction scheme, commonly used in Sol-gel processing, can be used in a vapor deposition environment. High quality films can be deposited at low temperatures. We present some initial results regarding this deposition method and discuss its advantages and disadvantages as compared with Sol-gel processing and typical MOCVD.

  5. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  6. Deposition of pure gold thin films from organometallic precursors

    NASA Astrophysics Data System (ADS)

    Parkhomenko, Roman G.; Trubin, Sergey V.; Turgambaeva, Asiya E.; Igumenov, Igor К.

    2015-03-01

    Using metallorganic chemical vapor deposition, pure gold thin films have been obtained from a number of volatile dimethylgold(III) complexes with different types of chelating organic ligands. Deposition was performed in argon (10 Torr) with and without hydrogen and oxygen as reactant gases and with additional VUV (vacuum ultraviolet) stimulation. According to the XRD phase analysis, gold films grow mainly in [111] direction. The influence of precursor structure on the morphology of the deposited layers was demonstrated. It was established that presence of H2 raises the growth rate and porosity of the films significantly with decreased amount of any impurities. With the VUV stimulation, the gold content in the films amounts to >99 at%.

  7. Silicon nitride films deposited with an electron beam created plasma

    NASA Astrophysics Data System (ADS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-03-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  8. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    NASA Astrophysics Data System (ADS)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  9. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  10. Simultaneous Vapor Deposition and Phase Separation of Polymer Films

    NASA Astrophysics Data System (ADS)

    Tao, Ran; Anthamatten, Mitchell

    2012-02-01

    Initiated chemical vapor deposition (iCVD) is a solventless, free radical technique used predominately to deposit homogeneous films of linear and crosslinked polymers directly from gas phase feeds. The major goal of this research is to force and arrest phase separation of deposited species by co-depositing non-reactive molecules (porogens) with reactive monomers and crosslinkers. We introduce these species during iCVD to force and quench polymer induced phase separation (PIPS) during film growth as a step toward tunable pore-size, density, and morphology. Polymerization, crosslinking and PIPS are intended to occur simultaneously on the substrate, resulting in a vitrified microstructure. Cahn-Hilliard theory predicts that the length scale of phase separation depends on the polymer-porogen interaction energy, the polymerization rate and the species' mobility. A series of films were grown by varying deposition rate, porogen type, and reagent flowrates. Crosslinkers were introduced to limit the growth of phase separated domains and to provide mechanical support during porogen removal. To elucidate how phase separation competes with polymerization and film growth, deposited films were studied using a combination of electron microscopy, profilometry and spectroscopic techniques.

  11. Surface tension gradient enhanced thin film flow for particle deposition

    NASA Astrophysics Data System (ADS)

    Gilchrist, James; Joshi, Kedar; Muangnapoh, Tanyakorn; Stever, Michael

    2015-11-01

    We investigate the effect of varying concentration in binary mixtures of water and ethanol as the suspending medium for micron-scale silica particles on convective deposition. By pulling a suspension along a substrate, a thin film is created that results in enhanced evaporation of the solvent and capillary forces that order particles trapped in the thin film. In pure water or pure ethanol, assembly and deposition is easily understood by a simply flux balance first developed by Dimitrov and Nagayama in 1996. In solvent mixtures having only a few percent of ethanol, Marangoni stresses from the concentration gradient set by unbalanced solvent evaporation dominates the thin film flow. The thin film profile is similar to that found in ``tears of wine'' where the particles are deposited in the thin film between the tears and the reservoir. A simple model describes the 10x increase of deposition speed found in forming well-ordered monolayers of particles. At higher ethanol concentrations, lateral instabilities also generated by Marangoni stresses cause nonuniform deposition in the form of complex streaks that mirror sediment deposits in larger scale flows. We acknowledge funding from the NSF Scalable Nanomanufacturing Program under grant No. 1120399.

  12. UV laser deposition of metal films by photogenerated free radicals

    NASA Technical Reports Server (NTRS)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  13. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-06-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3C 2, as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  14. SEM Analysis of Electrophoretically-Deposited Nanoparticle Films

    NASA Astrophysics Data System (ADS)

    Verma, Neil

    Cobalt ferrite nanoparticles (20 nm) were synthesized and electrophoretically deposited onto aluminum foil, graphite paper, and carbon felt in order to study its potential as a cost-effective electrocatalyst for the oxidation of ammonium sulfite to ammonium sulfate in a proposed sulfur ammonia thermochemical cycle. Scanning electron microscopy and linear sweep voltammetry were used to characterize the deposited films and investigate their electrochemical activity. Furthermore, the effects of electrophoretic deposition conditions on deposit morphology and subsequently the effects of deposit morphology on electrochemical activity in 2 M ammonium sulfite were studied to better understand how to improve electrocatalysts. It was found that there is a critical deposit thickness for each substrate, where additional deposited particles reduce overall electrocatalytic activity of the deposits. For graphite paper, this thickness was estimated to be 3 particle layers for the EPD conditions studied. The 3 particle layer film on graphite paper resulted in a 5.5 fold increase in current density from a blank graphite paper substrate. For carbon felt, the deposit thickness threshold was calculated to be 0.13 of a particle layer for the EPD conditions studied. Moreover, this film was found to have a 4.3 fold increase in current density from a blank carbon felt substrate.

  15. Crystallization behavior of vapor-deposited hexanitroazobenzene (HNAB) films

    NASA Astrophysics Data System (ADS)

    Knepper, Robert; Tappan, Alexander; Alam, Kathy; Rodriguez, Mark

    2011-06-01

    Hexanitroazobenzene is an interesting material for microenergetic research on explosive behavior at sub-millimeter geometries due to its small critical thickness for detonation and its chemical stability at temperatures above its melting point, which allows for fast deposition rates. HNAB films have been observed to deposit in an amorphous state, provided the substrate remains sufficiently cool during deposition. These amorphous films crystallize over a period of hours to weeks, depending on the ambient temperature, to a structure consisting of primarily HNAB-II crystallites. Several films were deposited to a thickness of ~100 microns and subjected to a variety of temperatures ranging from 30 -- 75°C to observe crystallization behavior. Crystallization rates were observed using time-lapse optical microscopy and were also characterized using scanning electron microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy at various stages of crystallization.

  16. Chemical vapour deposition of zeolitic imidazolate framework thin films

    NASA Astrophysics Data System (ADS)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  17. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  18. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  19. Thin film deposition by means of atmospheric pressure microplasma jet

    NASA Astrophysics Data System (ADS)

    Benedikt, J.; Raballand, V.; Yanguas-Gil, A.; Focke, K.; von Keudell, A.

    2007-12-01

    An RF microplasma jet working at atmospheric pressure has been developed for thin film deposition application. It consists of a capillary coaxially inserted in the ceramic tube. The capillary is excited by an RF frequency of 13.56 MHz at rms voltages of around 200-250 V. The plasma is generated in a plasma forming gas (helium or argon) in the annular space between the capillary and the ceramic tube. By adjusting the flows, the flow pattern prevents the deposition inside the source and mixing of the reactive species with the ambient air in the discharge and deposition region, so that no traces of air are found even when the microplasma is operated in an air atmosphere. All these properties make our microplasma design of great interest for applications such as thin film growth or surface treatment. The discharge operates probably in a γ-mode as indicated by high electron densities of around 8 × 1020 m-3 measured using optical emission spectroscopy. The gas temperature stays below 400 K and is close to room temperature in the deposition region in the case of argon plasma. Deposition of hydrogenated amorphous carbon films and silicon oxide films has been tested using Ar/C2H2 and Ar/hexamethyldisiloxane/O2 mixtures, respectively. In the latter case, good control of the film properties by adjusting the source parameters has been achieved with the possibility of depositing carbon free SiOx films even without the addition of oxygen. Preliminary results regarding permeation barrier properties of deposited films are also given.

  20. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  1. Effects of nitrogen pulsing on sputter-deposited beryllium films

    SciTech Connect

    Hsieh, E.J.; Price, C.W.; Pierce, E.L.; Wirtenson, R.G. )

    1990-05-01

    Beryllium films have been used as a heat sink'' layer between the reflective coating of a mirror and its glass substrate to improve the mirror's radiation resistance to prompt deposition of x rays. Under x-ray irradiation, the beryllium heat sink layer is subjected to tensile stresses caused by differences in thermal expansion coefficients. Test results indicated that the predominant failure mode was the film's crazing under tensile stress. The inherent columnar structure of the beryllium films deposited under normal conditions is detrimental to the tensile strength of the films and may be responsible for this type of failure. We successfully suppressed the inherent columnar growth in beryllium films by incorporating periodic N{sub 2} pulses during sputter deposition. The traditional substrate biasing approach did not seem to be as effective in modifying the grain structure. The results showed that higher N{sub 2} pulse rates during deposition were more effective in suppressing the columnar growth. However, we noticed that films deposited with nitrogen pulsing show higher secondary-electron emission in SEM micrographs, which indicates a significant incorporation of contaminants into the beryllium films. Quantitative analyses were conducted for nitrogen and oxygen contamination in the beryllium films using standards prepared by ion implantation. Secondary ion mass spectroscopy (SIMS) depth profiles were obtained for oxygen and nitrogen using mass isotopes {sup 16}O and 23({sup 9}Be+{sup 14}N). More than 2% of contaminants was observed in beryllium films at the higher pulse rates that were used. Thus, a minimum pulsing frequency and duration should be selected that provides grain refinement with a minimum amount of contamination.

  2. Heat treatment of cathodic arc deposited amorphous hard carbon films

    SciTech Connect

    Anders, S.; Ager, J.W. III; Brown, I.G.

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  3. Electrophoretic deposition of tannic acid-polypyrrolidone films and composites.

    PubMed

    Luo, Dan; Zhang, Tianshi; Zhitomirsky, Igor

    2016-05-01

    Thin films of polyvinylpyrrolidone (PVP)-tannic acid (TA) complexes were prepared by a conceptually new strategy, based on electrophoretic deposition (EPD). Proof of concept investigations involved the analysis of the deposition yield, FTIR and UV-vis spectroscopy of the deposited material, and electron microscopy studies. The analysis of the deposition mechanism indicated that the limitations of the EPD in the deposition of small phenolic molecules, such as TA, and electrically neutral polymers, similar to PVP, containing hydrogen-accepting carbonyl groups, can be avoided. The remarkable adsorption properties of TA and film forming properties of the PVP-TA complexes allowed for the EPD of materials of different types, such as huntite mineral platelets and hydrotalcite clay particles, TiO2 and MnO2 oxide nanoparticles, multiwalled carbon nanotubes, TiN and Pd nanoparticles. Moreover, PVP-TA complexes were used for the co-deposition of different materials and formation of composite films. In another approach, TA was used as a capping agent for the hydrothermal synthesis of ZnO nanorods, which were then deposited by EPD using PVP-TA complexes. The fundamental adsorption and interaction mechanisms of TA involved chelation of metal atoms on particle surfaces with galloyl groups, π-π interactions and hydrogen bonding. The films prepared by EPD can be used for various applications, utilizing functional properties of TA, PVP, inorganic and organic materials of different types and their composites. PMID:26878711

  4. Pulsed laser deposition of ITO thin films and their characteristics

    SciTech Connect

    Zuev, D. A. Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-03-15

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

  5. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    NASA Astrophysics Data System (ADS)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  6. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  7. Methods for making deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1982-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or larger planar surfaces.

  8. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  9. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  10. Vapor-deposited porous films for energy conversion

    DOEpatents

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  11. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  12. Deposition of moisture barrier films by catalytic CVD using hexamethyldisilazane

    NASA Astrophysics Data System (ADS)

    Ohdaira, Keisuke; Matsumura, Hideki

    2014-01-01

    Hexamethyldisilazane (HMDS) is utilized to deposit moisture barrier films by catalytic chemical vapor deposition (Cat-CVD). An increase in the thickness of silicon oxynitride (SiOxNy) films leads to a better water-vapor transmission rate (WVTR), indicating that Cat-CVD SiOxNy films deposited using HMDS do not severely suffer from cracking. A WVTR on the order of 10-3 g m-2 day-1 can be realized by a Cat-CVD SiOxNy film formed using HMDS on a poly(ethylene terephthalate) (PET) substrate without any stacking structures at a substrate temperature of as low as 60 °C. X-ray reflectivity (XRR) measurement reveals that a film density of >2.0 g/cm3 is necessary for SiOxNy films to demonstrate an effective moisture barrier ability. The use of HMDS will give us safer production of moisture barrier films because of its non-explosive and non-toxic nature.

  13. Film synthesis on powders by cathodic arc plasma deposition

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Ivanov, I.C.

    1995-04-01

    Cathodic arc plasma deposition was used to coat Al{sub 2}O{sub 3} powder (mesh size 60) with platinum. The power particles were moved during deposition using a mechanical system operating at a resonance frequency of 20 Hz. Scanning electron microscopy and Auger electron microscopy show that all particles are completely coated with a platinum film having a thickness of about 100 nm. The actual deposition time was only 20 s, thus the deposition rate was very high (5 nm/s).

  14. Final report of ''Fundamental Surface Reaction Mechanisms in Fluorocarbon Plasma-Based Processing''

    SciTech Connect

    Gottlieb S. Oehrlein; H. Anderson; J. Cecchi; D. Graves

    2004-09-21

    This report provides a summary of results obtained in research supported by contract ''Fundamental Surface Reaction Mechanisms in Fluorocarbon Plasma-Based Processing'' (Contract No. DE-FG0200ER54608). In this program we advanced significantly the scientific knowledge base on low pressure fluorocarbon plasmas used for patterning of dielectric films and for producing fluorocarbon coatings on substrates. We characterized important neutral and ionic gas phase species that are incident at the substrate, and the processes that occur at relevant surfaces in contact with the plasma. The work was performed through collaboration of research groups at three universities where significantly different, complementary tools for plasma and surface characterization, computer simulation of plasma and surface processes exist. Exchange of diagnostic tools and experimental verification of key results at collaborating institutions, both experimentally and by computer simulations, was an important component of the approach taken in this work.

  15. Fractal structure of films deposited in a tokamak

    NASA Astrophysics Data System (ADS)

    Budaev, V. P.; Khimchenko, L. N.

    2007-04-01

    The surface of amorphous films deposited in the T-10 tokamak was studied in a scanning tunnel microscope. The surface relief on a scale from 10 nm to 100 μm showed a stochastic surface topography and revealed a hierarchy of grains. The observed variety of irregular structures of the films was studied within the framework of the concept of scale invariance using the methods of fractal geometry and statistical physics. The experimental probability density distribution functions of the surface height variations are close in shape to the Cauchy distribution. The stochastic surface topography of the films is characterized by a Hurst parameter of H = 0.68-0.85, which is evidence of a nontrivial self-similarity of the film structure. The fractal character and porous structure of deposited irregular films must be considered as an important issue related to the accumulation of tritium in the ITER project. The process of film growth on the surface of tokamak components exposed to plasma has been treated within the framework of the general concept of inhomogeneous surface growth. A strong turbulence of the edge plasma in tokamaks can give rise to fluctuations in the incident flux of particles, which leads to the growth of fractal films with grain dimensions ranging from nano-to micrometer scale. The shape of the surface of some films found in the T-10 tokamak has been interpreted using a model of diffusion-limited aggregation (DLA). The growth of films according to the discrete DLA model was simulated using statistics of fluctuations observed in a turbulent edge plasma of the T-10 tokamak. The modified DLA model reproduces well the main features of the surface of some films deposited in tokamaks.

  16. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  17. A new approach to the deposition of nanostructured biocatalytic films

    NASA Astrophysics Data System (ADS)

    Troitsky, V. I.; Berzina, T. S.; Pastorino, L.; Bernasconi, E.; Nicolini, C.

    2003-06-01

    In the present work, monolayer engineering was used to fabricate biocatalytic nanostructured thin films based on the enzyme penicillin G acylase. The biocatalytic films with enhanced characteristics were produced by the deposition of alternate-layer assemblies with a predetermined structure using a combination of Langmuir-Blodgett and adsorption techniques. The value of enzyme activity and the level of protein detachment were measured in dependence on the variation of film composition and on the sequence of layer alternation. As a result, highly active and stable structures were found, which could be promising candidates for practical applications. The method of modification of the deposition method to provide continuous film formation on large-area supports is discussed.

  18. Nanocrystalline Pd alloy films coated by electroless deposition.

    PubMed

    Strukov, G V; Strukova, G K; Batov, I E; Sakharov, M K; Kudrenko, E A; Mazilkin, A A

    2011-10-01

    The structures of palladium and palladium alloys thin films deposited from organic electrolytes onto metallic substrates by electroless plating method have been investigated. The coatings are dense, pore-free 0.005-1 microm thick films with high adhesive strength to the substrate surface. EDX, XRD, SEM and TEM methods were used to determine the composition and structure of alloy coatings of the following binary systems: Pd-Au, Pd-Ag, Pd-Ni, Pd-Pb, and ternary system Pd-Au-Ni. The coatings of Pd-Au, Pd-Ag and Pd-Ni have a solid solution structure, whereas Pd-Pb is intermetallic compound. It has been found that the deposited films consist of nanocrystalline grains with sizes in the range of 11-35 nm. Scanning and transmission electron microscopy investigations reveal the existence of clusters formed by nanocrystalline grains. The origin for the formation of nanocrystalline structures of coating films is discussed. PMID:22400291

  19. Microwave annealing effects on ZnO films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Shirui, Zhao; Yabin, Dong; Mingyan, Yu; Xiaolong, Guo; Xinwei, Xu; Yupeng, Jing; Yang, Xia

    2014-11-01

    Zinc oxide thin films deposited on glass substrate at 150 °C by atomic layer deposition were annealed by the microwave method at temperatures below 500 °C. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

  20. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  1. Nanostructuring and texturing of pulsed laser deposited hydroxyapatite thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hyunbin; Catledge, Shane; Vohra, Yogesh; Camata, Renato; Lacefield, William

    2003-03-01

    Hydroxyapatite (HA) [Ca_10(PO_4)_6(OH)_2] is commonly deposited onto orthopedic and dental metallic implants to speed up bone formation around devices, allowing earlier stabilization in a patient. Pulsed laser deposition (PLD) is a suitable means of placing thin HA films on these implants because of its control over stoichiometry, crystallinity, and nanostructure. These characteristics determine the mechanical properties of the films that must be optimized to improve the performance of load-bearing implants and other devices that undergo bone insertion. We have used PLD to produce nanostructured and preferentially oriented HA films and evaluated their mechanical properties. Pure, highly crystalline HA films on Ti-6Al-4V substrates were obtained using a KrF excimer laser (248nm) with energy density of 4-8 J/cm^2 and deposition temperature of 500-700^rcC. Scanning electron and atomic force microscopies reveal that our careful manipulation of energy density and substrate temperature has led to films made up of HA grains in the nanometer scale. Broadening of x-ray diffraction peaks as a function of deposition temperature suggests it may be possible to control the film nanostructure to a great extent. X-ray diffraction also shows that as the laser energy density is increased in the 4-8 J/cm^2 range, the hexagonal HA films become preferentially oriented along the c-axis perpendicular to the substrate. Texture, nanostructure, and phase make-up all significantly influence the mechanical properties. We will discuss how each of these factors affects hardness and Young's modulus of the HA films as measured by nanoindentation.

  2. Deposition Of Diamondlike Films By ECR Microwave Plasma

    NASA Technical Reports Server (NTRS)

    Pool, Frederick S.; Shing, Yuh-Han

    1991-01-01

    Hard, amorphous hydrogenated carbon films of diamondlike quality deposited at room temperature on silicon, optical glass, and quartz through decomposition of CH4 in electron-cyclotron-resonance (ECR) microwave plasma of CH4 diluted with H2. Technique provides hard, abrasion-resistant coatings for lenses and other optical components. Films chemically inert and posses high electrical resistivity and breakdown fields, valuable properties in microelectronics applications.

  3. Substrates suitable for deposition of superconducting thin films

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  4. Deposition of YBCO films by high temperature spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Shields, T. C.; Abell, J. S.; Button, T. W.; Chakalov, R. A.; Chakalova, R. I.; Cai, C.; Haessler, W.; Eickemeyer, J.; de Boer, B.

    2002-08-01

    The fabrication of YBCO coated conductors on flexible textured metallic substrates requires the deposition of biaxially textured buffer layers and superconducting films. In this study we have prepared YBCO thin films on single crystal SrTiO 3 substrates and cube textured Ni substrates by spray pyrolysis. The Ni substrates have been pre-buffered with CeO 2/YSZ/CeO 2, layers deposited by pulsed laser deposition. Spray pyrolysis of nitrate solutions has been performed directly on heated substrates at temperatures between 800 and 900 °C without need for a subsequent annealing step. YBCO films deposited on both types of substrate are biaxially textured. Full width half maximum values determined from φ-scans are 8° and 20° for films on SrTiO 3 and buffered Ni substrates respectively. A transport Jc value of 1.2×10 5 A/cm 2 at 77 K and zero field has been achieved on SrTiO 3 ( T c onset=91 K, ΔTc=6 K). χ ac susceptibility measurements of films on buffered Ni substrates show Tc onsets of 88 K with ΔTc=18 K.

  5. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki; Mizuhata, Minoru

    2009-09-15

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  6. Pulsed laser deposition of anatase thin films on textile substrates

    NASA Astrophysics Data System (ADS)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-01

    Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  7. Infrared antireflection DLC films by femtosecond pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Shuyun; Guo, Yanlong; Wang, Xiaobing; Cheng, Yong; Wang, Huisheng; Liu, Xu

    2009-05-01

    Diamond-like Carbon(DLC) films are deposited by Ti:Sapphire femtosecond pulsed laser(800nm, 120fs-2ps, 3.3W, 1-1000Hz) at room temperature. The substrate is n-type Si(100), and the target is 99.999%-purity graphite. After a great lot of experiments, optimal technical parameters, which are 1000Hz repetition frequency, 120fs pulse-width, 5cm-distance between target and underlay and 1014W/cm2 power-density, were used to deposite 443nm thick DLC film. Raman spectrum measurement shows a broad peak with a center at 1550 cm-1 for all films, similar to those of typical diamond-like carbon films prepared using other methods. And sp3-bond content reaches 67% analyzed by XPS. There is no nick on the film when scraped 105 times by a RS-5600 friction test machine under the pressure of 9.8N. The infrared transmittance increases along with the oxygen pressure when between 0.03 Pa and 2 Pa. The result shows that oxygen is effective in etching sp2-bond content. The extreme infrared transmittance of Si slice deposited DLC film on single surface is higher than 64% at 3-5μm, superior to 53% when being uncoated.

  8. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkilä, Mikko J.; Vehkamäki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  9. Effects of nitrogen pulsing on sputter-deposited beryllium films

    SciTech Connect

    Hsieh, E.J.; Price, C.W.; Pierce, E.L.; Wirtenson, G.R.

    1989-08-09

    Beryllium films have been used as a heat sink'' layer between the reflective coating of a mirror and its glass substrate to improve the mirror's radiation resistance to prompt deposition of x-rays. Under x-ray irradiation, the beryllium heat sink'' layer is subjected to tensile stresses caused by differences in thermal expansion coefficients. Test results indicated that the predominant failure mode was the film's crazing under tensile stress. The inherent columnar structure of the beryllium films deposited under normal conditions in detrimental to the tensile strength of the films and may be responsible for this type of failure. We successfully suppressed the inherent columnar growth in beryllium films by incorporating periodic N{sub 2} pulses during sputter deposition. Quantitative analyses were conducted for nitrogen and oxygen contamination in the beryllium films using standards prepared by ion implantation. Secondary ion mass spectroscopy (SIMS) depth profiles were obtained for oxygen and nitrogen using mass isotopes {sup 16}O and 23({sup 9}Be + {sup 14}N).

  10. Process for thin film deposition of cadmium sulfide

    DOEpatents

    Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

    1982-01-01

    The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

  11. Growth Simulation and Structure Analysis of Obliquely Deposited Thin Films

    NASA Astrophysics Data System (ADS)

    Belyaev, B. A.; Izotov, A. V.; Solovev, P. N.

    2016-06-01

    Based on the Monte Carlo method, a model of growth of thin films prepared by oblique angle deposition of particles is constructed. The morphology of structures synthesized by simulation is analyzed. To study the character of distribution of microstructural elements (columns) in the film plane, the autocorrelation function of the microstructure and the fast Fourier transform are used. It is shown that with increasing angle of particle incidence, the film density monotonically decreases; in this case, anisotropy arises and monotonically increases in the cross sections of columns, and the anisotropy of distribution of columns in the substrate plane also increases.

  12. Hardness of CNx films deposited by MCECR plasma sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Li, Junpeng; Mi, Qian; Ma, Weihong; Yan, Yixin; Liang, Haifeng

    2007-12-01

    The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N II plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N II ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10 -2Pa, and the Ar/N II ratio is 9/1.

  13. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  14. Coaxial carbon plasma gun deposition of amorphous carbon films

    NASA Technical Reports Server (NTRS)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  15. Friction and wear of plasma-deposited diamond films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Garscadden, Alan; Barnes, Paul N.; Jackson, Howard E.

    1993-01-01

    Reciprocating sliding friction experiments in humid air and in dry nitrogen and unidirectional sliding friction experiments in ultrahigh vacuum were conducted with a natural diamond pin in contact with microwave-plasma-deposited diamond films. Diamond films with a surface roughness (R rms) ranging from 15 to 160 nm were produced by microwave-plasma-assisted chemical vapor deposition. In humid air and in dry nitrogen, abrasion occurred when the diamond pin made grooves in the surfaces of diamond films, and thus the initial coefficients of friction increased with increasing initial surface roughness. The equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. In vacuum the friction for diamond films contacting a diamond pin arose primarily from adhesion between the sliding surfaces. In these cases, the initial and equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. The equilibrium coefficients of friction were 0.02 to 0.04 in humid air and in dry nitrogen, but 1.5 to 1.8 in vacuum. The wear factor of the diamond films depended on the initial surface roughness, regardless of environment; it increased with increasing initial surface roughness. The wear factors were considerably higher in vacuum than in humid air and in dry nitrogen.

  16. Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

    NASA Astrophysics Data System (ADS)

    Tomcik, B.

    2010-07-01

    Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

  17. Germanium films by polymer-assisted deposition

    SciTech Connect

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  18. The Effect of Deposition Temperature to Photoconductivity Properties of Amorphous Carbon Thin Films Deposited By Thermal CVD

    NASA Astrophysics Data System (ADS)

    Mohamad, F.; Suriani, A. B.; Noor, U. M.; Rusop, M.

    2010-07-01

    Amorphous carbon (a-C) thin films were deposited by thermal chemical vapor deposition (CVD) using camphor oil on quartz substrates. The photoconductivity and optical properties of the thin films were studied with varying the deposition temperatures ranging from 650 to 900 °C. The film deposited at 750 °C shows large photoconductivity compare to other films. The optical characterization shows that the optical band gap of the thin films decreased from 0.65 to ˜0.0eV with increasing the deposition temperature due to the increase of sp2 bonded carbon configuration. The electrical conductivity of the thin films grown at higher temperature is much higher compared with the thin films deposited at low temperature.

  19. Effect of Deposition Temperature on the Properties of TIO2 Thin Films Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Khalifa, Zaki S.

    2016-02-01

    Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

  20. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  1. Electron attachment to fluorocarbon radicals

    NASA Astrophysics Data System (ADS)

    Shuman, Nicholas

    2014-10-01

    Most plasma environments contain populations of short-lived species such as radicals, the chemistry of which can have significant effects on the overall chemistry of the system. However, few experimental measurements of the kinetics of electron attachment to radicals exist due to the inherent difficulties of working with transient species. Calculations from first principles have been attempted, but are arduous and, because electron attachment is so sensitive to the specifics of the potential surface, their accuracy has not been established. Electron attachment to small fluorocarbon radicals is particularly important, as the data are needed for predictive modeling of plasma etching of semiconductor materials, a key process in the industrial fabrication of microelectronics. We have recently developed a novel flowing afterglow technique to measure several types of otherwise difficult to study plasma processes, including thermal electron attachment to radicals. Variable Electron and Neutral Density Attachment Mass Spectrometry (VENDAMS) exploits dissociative electron attachment in a weakly ionized plasma as a radical source. Here, we apply VENDAMS to a series of halofluorocarbon precursors in order to measure the kinetics of thermal electron attachment to fluorocarbon radicals. Results are presented for CF2, CF3, C2F5,C2F3,1-C3F7, 2-C3F7, and C3F5 from 300 K to 900 K. Both the magnitude and the temperature dependences of rate coefficients as well as product branching between associative and dissociative attachment are highly system specific; however, thermal attachment to all species is inefficient, never exceeding 5% of the collision rate. The data are analyzed using a recently developed kinetic modeling approach, which uses extended Vogt-Wannier theory as a starting point, accounts for dynamic effects such as coupling between the electron and nuclear motions through empirically validated functional forms, and finally uses statistical theory to determine the fate of

  2. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  3. Vacuum deposited polymer/metal films for optical applications

    SciTech Connect

    Affinito, J.D.; Martin, P.M.; Gross, M.E.; Coronado, C.; Greenwell, E.

    1995-04-01

    Vacuum deposited Polymer/Silver/Polymer reflectors and Tantalum/Polymer/Aluminum Fabry-Perot interference filters were fabricated in a vacuun web coating operation on polyester substrates with a new, high speed deposition process. Reflectivities were measured in the wavelength range from 0.3 to 0.8{mu}m. This new vacuum processing technique has been shown to be capable of deposition line speeds in excess of 500 linear meters/minute. Central to this technique is a new position process for the high rate deposition of polymer films. This polymer process involves the flash evaporation of an acrylic monomer onto a moving substrate. The monomer is subsequently cured by an electron beam or ultraviolet light. This high speed polymer film deposition process has been named the PML process -- for Polymer Multi-Layer. Also, vacuum deposited, index matched, polymer/CaF{sub 2} composites were fabricated from monomer slurries that were subsequently cured with LTV light. This second technique is called the Liquid Multi-Layer (or LML) process. Each of these polymer processes is compatible with each other and with conventional vacuum deposition processes such as sputtering or evaporation.

  4. Hardening of smooth pulsed laser deposited PMMA films by heating

    NASA Astrophysics Data System (ADS)

    Fuchs, Britta; Schlenkrich, Felix; Seyffarth, Susanne; Meschede, Andreas; Rotzoll, Robert; Vana, Philipp; Großmann, Peter; Mann, Klaus; Krebs, Hans-Ulrich

    2010-03-01

    Smooth poly(methyl methacrylate) (PMMA) films without any droplets were pulsed laser deposited at a wavelength of 248 nm and a laser fluence of 125 mJ/cm2. After deposition at room temperature, the films possess low universal hardness of only 3 N/mm2. Thermal treatments up to 200°C, either during deposition or afterwards, lead to film hardening up to values of 200 N/mm2. Using a combination of complementary methods, two main mechanisms could be made responsible for this temperature induced hardening effect well above the glass transition temperature of 102°C. The first process is induced by the evaporation of chain fragments and low molecular mass material, which are present in the film due to the ablation process, leading to an increase of the average molecular mass and thus to hardening. The second mechanism can be seen in partial cross-linking of the polymer film as soon as chain scission occurs at higher temperatures and the mobility and reactivity of the polymer material is high enough.

  5. Residual stress in zinc oxide thin films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Elam, David; Kotha, Ramakrishna; Ayon, Arturo; Chabanov, Andrey

    2010-10-01

    The residual stress in a thin film can have an impact on the electrical and optical properties of the film. In addition, stress is an important consideration when incorporating the material into a microelectromechanical (MEMS) device as large unexpected stresses can cause such a device to fail. The residual stress in ZnO thin films prepared by atomic layer deposition was measured using a radius of curvature technique. The results show relatively low residual stresses on the order of ˜0.1 GPa. The stress is observed to change from tensile to compressive as a function of increasing deposition temperature. The polycrystalline structures of the films are also investigated using XRD techniques.

  6. Novel solutions for thin film layer deposition for organic materials

    NASA Astrophysics Data System (ADS)

    Keiper, Dietmar; Long, Michael; Schwambera, Markus; Gersdorff, Markus; Kreis, Juergen; Heuken, Michael

    2011-03-01

    Innovative systems for carrier-gas enhanced vapor phase deposition of organic layers offer advanced methods for the precise deposition of complex thin-film layer stacks. The approach inherently avoids potential short-comings from solvent-based polymer deposition and offers new opportunities. The process operates at low pressure (thus avoiding complex vacuum setups), and, by employing AIXTRON's extensive experience in freely scalable solutions, can be adapted to virtually any production process and allows for R&D and production systems alike. Deposition of organic layers and stacks recommends the approach for a wide range of organic small molecule and polymer materials (including layers with gradual change of the composition), for conductive layers, for dielectric layers, for barrier systems, for OLED materials, and surface treatments such as oleophobic / hydrophobic coatings. With the combination of other vapor phase deposition solutions, hybrid systems combining organic and inorganic materials and other advanced stacks can be realized.

  7. Thermodynamics of deposition flux-dependent intrinsic film stress

    PubMed Central

    Saedi, Amirmehdi; Rost, Marcel J.

    2016-01-01

    Vapour deposition on polycrystalline films can lead to extremely high levels of compressive stress, exceeding even the yield strength of the films. A significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges on resumption. Although the debate on the underlying mechanism still continues, insertion of atoms into grain boundaries seems to be the most likely one. However, the required driving force has not been identified. To address the problem we analyse, here, the entire film system using thermodynamic arguments. We find that the observed, tremendous stress levels can be explained by the flux-induced entropic effects in the extremely dilute adatom gas on the surface. Our analysis justifies any adatom incorporation model, as it delivers the underlying thermodynamic driving force. Counterintuitively, we also show that the stress levels decrease, if the barrier(s) for adatoms to reach the grain boundaries are decreased. PMID:26888311

  8. Thermodynamics of deposition flux-dependent intrinsic film stress

    NASA Astrophysics Data System (ADS)

    Saedi, Amirmehdi; Rost, Marcel J.

    2016-02-01

    Vapour deposition on polycrystalline films can lead to extremely high levels of compressive stress, exceeding even the yield strength of the films. A significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges on resumption. Although the debate on the underlying mechanism still continues, insertion of atoms into grain boundaries seems to be the most likely one. However, the required driving force has not been identified. To address the problem we analyse, here, the entire film system using thermodynamic arguments. We find that the observed, tremendous stress levels can be explained by the flux-induced entropic effects in the extremely dilute adatom gas on the surface. Our analysis justifies any adatom incorporation model, as it delivers the underlying thermodynamic driving force. Counterintuitively, we also show that the stress levels decrease, if the barrier(s) for adatoms to reach the grain boundaries are decreased.

  9. Light-assisted deposition of CdS thin films

    NASA Astrophysics Data System (ADS)

    Bacaksiz, E.; Novruzov, V.; Karal, H.; Yanmaz, E.; Altunbas, M.; Kopya, A. I.

    2001-11-01

    The effects of white light illumination during the deposition of CdS thin films in a quasi-closed volume on the structural, photoelectrical and optical properties are investigated. The films were highly c-axis oriented with an increasing intensity of (002) reflection as the illumination increases. The room temperature resistivity values of the CdS films decreased in the range of 107-104 Ω cm. The photosensitivity in the fundamental absorption region and the transparency in the transmission region considerably increased as the illumination increased. Under 100 mW cm-2 insolation, the efficiencies of the CdS/CdTe solar cells based on CdS window materials which were deposited: (1) in the dark; and (2) under an illumination of 150 mW cm-2 were found to be 1.8% and 7.3%, respectively.

  10. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  11. Vapor pressures of new fluorocarbons

    SciTech Connect

    Kubota, H.; Yamashita, T.; Tanaka, Y.; Makita, T. )

    1989-05-01

    The vapor pressures of four fluorocarbons have been measured at the following temperature ranges: R123 (2,2-dichloro-1,1,1-trifluoroethane), 273-457 K; R123a (1,2-dichloro-1,1,2-trifluoroethane), 303-458 K; R134a (1,1,1,2-tetrafluoroethane), 253-373 K; and R132b (1,2-dichloro-1,1-difluoroethane), 273-398 K. Determinations of the vapor pressure were carried out by a constant-volume apparatus with an uncertainty of less than 1.0%. The vapor pressures of R123 and R123a are very similar to those of R11 over the whole experimental temperature range, but the vapor pressures of R134a and R132b differ somewhat from those of R12 and R113, respectively, as the temperature increases. The numerical vapor pressure data can be fitted by an empirical equation using the Chebyshev polynomial with a mean deviation of less than 0.3%.

  12. Instabilities in fluorocarbon ICP plasmas

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul; Abada, Hana

    2000-10-01

    Several recent studies (Lieberman and al(M. A. Lieberman, A. J. Lichtenberg and A. M. Marakhtanov, App. Phys. Vol75,3617 (1999)), Tuszewski(M. Tuszewski, J. Appl. Phys. 79, 8967 (1996))) have shown the presence of instabilities in low pressure inductively coupled discharges with electronegative gases (O_2, Ar/SF_6). Lieberman and al^1 have proposed an explanation for this effect in terms of electon attachment processes causing an oscillation between capacitive and inductive coupling modes. We have observed similar instabilities in ICP fluorocarbon plasmas (CF_4, C_2F_6, CHF_3) by observing the optical emission from the plasma. In CF4 plasmas, the optical emission is modulated by up to 90% at frequencies 200-1 kHz at 1-20 mtorr with rf powers of 300 W and 500W. We have also observed an interesting phenomenon whereby inductive/capacitive oscillations occur during several hundreds of ms, in between periods of stable capactive operation lasting several hudreds of ms.

  13. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  14. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  15. In situ measurement of conductivity during nanocomposite film deposition

    NASA Astrophysics Data System (ADS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-05-01

    Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (Tg) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing Tg. Proper selection of the host polymer in combination with in situ resistance monitoring therefore enable the optimal preparation of conductive nanocomposite films.

  16. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  17. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M.; Chason, E.

    1992-12-31

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of {approximately} 1--50 {Angstrom}, has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 {Angstrom} X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 {Angstrom} (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  18. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M. ); Chason, E. )

    1992-01-01

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of [approximately] 1--50 [Angstrom], has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 [Angstrom] X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 [Angstrom] (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  19. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  20. Influence of Deposition Time on ZnS Thin Films Performance with Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Limei; Tang, Nan; Wu, Sumei; Hu, Xiaofei; Xue, Yuzhi

    ZnS thin films had been deposited by chemical bath deposition method onto glass substrates in alkaline liquor. The reaction solution is made of ZnSO4, NH4OH and SC(NH2)2. Different deposition times (1 h, 1.5 h, 2 h, 2.5 h and 3 h) were selected to study the performance of ZnS thin films. As the results, the ZnS films' thickness were about 50-207 nm. XRD results showed an amorphous structure. Through comparing the surface morphology before and after annealing, it could be seen that annealing made some particles grow up and the surface smooth and even. The transmittance decreased with the increase of deposition time in the range of 300-800 nm. The transmittance of annealed ZnS film was lower than that of deposited one in the range of 300-800 nm. The ZnS band gap values were calculated in the range of 3.72-3.9 eV.

  1. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  2. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  3. Mechanical reinforcement of nanoparticle thin films using atomic layer deposition.

    PubMed

    Dafinone, Majemite I; Feng, Gang; Brugarolas, Teresa; Tettey, Kwadwo E; Lee, Daeyeon

    2011-06-28

    Thin films composed of nanoparticles exhibit synergistic properties, making them useful for numerous advanced applications. Nanoparticle thin films (NTFs), however, have a very low resistance to mechanical loading and abrasion, presenting a major bottleneck to their widespread use and commercialization. High-temperature sintering has been shown to improve the mechanical durability of NTFs on inorganic substrates; however, these high-temperature processes are not amenable to organic substrates. In this study, we demonstrate that the mechanical durability of TiO(2)/SiO(2) nanoparticle layer-by-layer (LbL) films on glass and polycarbonate substrates can be drastically improved using atomic layer deposition (ALD) at a relatively low temperature. The structure and physical properties of ALD-treated TiO(2)/SiO(2) nanoparticle LbL films are studied using spectroscopic ellipsometry, UV-vis spectroscopy, contact angle measurements, and nanoindentation. The composition of TiO(2)/SiO(2) LbL films as a function of ALD-cycle number is determined through solution ellipsometry, enabling the determination of the characteristic pore size of nanoparticle thin films. Mechanical durability is also investigated by abrasion tests, showing that the robustness of ALD-treated nanoparticle films is comparable to that of thermally calcined films. More importantly, ALD-treated nanoparticle films retain the original functionality of the TiO(2)/SiO(2) LbL films, such as superhydrophilicity and antireflection properties, demonstrating the utility of ALD as a reinforcement method for nanoparticle thin films. PMID:21557541

  4. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation. PMID:18449260

  5. Growth of graphene films by plasma enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Baraton, Laurent; Gangloff, Laurent; Xavier, Stéphane; Cojocaru, Costel S.; Huc, Vincent; Legagneux, Pierre; Lee, Young Hee; Pribat, Didier

    2009-08-01

    Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO2 layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

  6. Smoothing of mirror substrates by thin-film deposition

    SciTech Connect

    Baker, S; Parra, E; Spiller, E; Tarrio, C

    1999-08-03

    Superpolished optical flats with high spatial frequency roughness below 0.1 nm have been commercially available for years. However, it is much more difficult to obtain figured optics of similar quality. We have obtained and tested the finish of figured optics from different vendors by atomic force microscopy and optical profilometry and have investigated how the substrate quality can be improved by the deposition of thin films. We have determined the growth parameters of several thin-film structures. From these parameters we can determine how the surface topography of a coated mirror differs from that of the substrate, select the best thin-film structure, and predict the possible improvement. Keywords: Smoothing films, multilayer coatings, finish of mirror substrates

  7. Combinatorial thin film composition mapping using three dimensional deposition profiles.

    PubMed

    Suram, Santosh K; Zhou, Lan; Becerra-Stasiewicz, Natalie; Kan, Kevin; Jones, Ryan J R; Kendrick, Brian M; Gregoire, John M

    2015-03-01

    Many next-generation technologies are limited by material performance, leading to increased interest in the discovery of advanced materials using combinatorial synthesis, characterization, and screening. Several combinatorial synthesis techniques, such as solution based methods, advanced manufacturing, and physical vapor deposition, are currently being employed for various applications. In particular, combinatorial magnetron sputtering is a versatile technique that provides synthesis of high-quality thin film composition libraries. Spatially addressing the composition of these thin films generally requires elemental quantification measurements using techniques such as energy-dispersive X-ray spectroscopy or X-ray fluorescence spectroscopy. Since these measurements are performed ex-situ and post-deposition, they are unable to provide real-time design of experiments, a capability that is required for rapid synthesis of a specific composition library. By using three quartz crystal monitors attached to a stage with translational and rotational degrees of freedom, we measure three-dimensional deposition profiles of deposition sources whose tilt with respect to the substrate is robotically controlled. We exhibit the utility of deposition profiles and tilt control to optimize the deposition geometry for specific combinatorial synthesis experiments. PMID:25832242

  8. Combinatorial thin film composition mapping using three dimensional deposition profiles

    NASA Astrophysics Data System (ADS)

    Suram, Santosh K.; Zhou, Lan; Becerra-Stasiewicz, Natalie; Kan, Kevin; Jones, Ryan J. R.; Kendrick, Brian M.; Gregoire, John M.

    2015-03-01

    Many next-generation technologies are limited by material performance, leading to increased interest in the discovery of advanced materials using combinatorial synthesis, characterization, and screening. Several combinatorial synthesis techniques, such as solution based methods, advanced manufacturing, and physical vapor deposition, are currently being employed for various applications. In particular, combinatorial magnetron sputtering is a versatile technique that provides synthesis of high-quality thin film composition libraries. Spatially addressing the composition of these thin films generally requires elemental quantification measurements using techniques such as energy-dispersive X-ray spectroscopy or X-ray fluorescence spectroscopy. Since these measurements are performed ex-situ and post-deposition, they are unable to provide real-time design of experiments, a capability that is required for rapid synthesis of a specific composition library. By using three quartz crystal monitors attached to a stage with translational and rotational degrees of freedom, we measure three-dimensional deposition profiles of deposition sources whose tilt with respect to the substrate is robotically controlled. We exhibit the utility of deposition profiles and tilt control to optimize the deposition geometry for specific combinatorial synthesis experiments.

  9. Preparation and Characterization of SnO2 thin films deposited by Chemical Bath Deposition method

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Raimi, Adepoju; Familusi, Timothy; Awodugba, Ayodeji; Efunwole, Hezekiah

    2013-04-01

    SnO2 thin films have been deposited onto the soda lime glass substrates by the chemical bath deposition method. The structural and optical properties of the SnO2 thin films were investigated. Tin chloride solution (SnCl2) and methanol were used as starting materials at substrate temperature 300°C. The crystal structure and orientation of the SnO2 thin films were investigated by X-ray diffraction (XRD) patterns. The average grain size of the films was calculated using the Scherer formula and was found to be 29.6 nm which increased to 30.04nm after annealing in air at 400°C. The optical absorbance and transmittance measurements were recorded by using spectrophotometer. The average transmittance of the film was around 80 % at wavelength 550 nm. The optical band gap of the thin films was determined and found to be 3.71eV. The gas sensing properties of tin oxide thin films obtained in this work could be performed for different gases like CO, CH4, H2S, H2 etc. The Authors would like to acknowledge the encouragement and financial support from the Management of Osun state Polytechnic, Iree.

  10. Preparation and Characterization of SnO2 thin films deposited by Chemical Bath Deposition method

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo T.; Raimi, Adepoju M.; Familusi, Timothy O.; Awodugba, Ayodeji O.; Efunwole, Hezekiah O.

    2013-04-01

    SnO2 thin films have been deposited onto the soda lime glass substrates by the chemical bath deposition method. The structural and optical properties of the SnO2 thin films were investigated. Tin chloride solution (SnCl2) and methanol were used as starting materials at substrate temperature 300^oC. The crystal structure and orientation of the SnO2 thin films were investigated by X-ray diffraction (XRD) patterns. The average grain size of the films was calculated using the Scherer formula and was found to be 29.6 nm which increased to 30.04nm after annealing in air at 400^oC. The optical absorbance and transmittance measurements were recorded by using spectrophotometer. The average transmittance of the film was around 80 % at wavelength 550 nm. The optical band gap of the thin films was determined and found to be 3.71eV. The gas sensing properties of tin oxide thin films obtained in this work could be performed for different gases like CO, CH4, H2S, H2 etc.

  11. Fluorocarbon Adsorption in Hierarchical Porous Frameworks

    SciTech Connect

    Motkuri, Radha K.; Annapureddy, Harsha V.; Vijayakumar, M.; Schaef, Herbert T.; Martin, P F.; McGrail, B. Peter; Dang, Liem X.; Krishna, Rajamani; Thallapally, Praveen K.

    2014-07-09

    The adsorption behavior of a series of fluorocarbon derivatives was examined on a set of microporous metal organic framework (MOF) sorbents and another set of hierarchical mesoporous MOFs. The microporous M-DOBDC (M = Ni, Co) showed a saturation uptake capacity for R12 of over 4 mmol/g at a very low relative saturation pressure (P/Po) of 0.02. In contrast, the mesoporous MOF MIL-101 showed an exceptionally high uptake capacity reaching over 14 mmol/g at P/Po of 0.4. Adsorption affinity in terms of mass loading and isosteric heats of adsorption were found to generally correlate with the polarizability of the refrigerant with R12 > R22 > R13 > R14 > methane. These results suggest the possibility of exploiting MOFs for separation of azeotropic mixtures of fluorocarbons and use in eco-friendly fluorocarbon-based adsorption cooling and refrigeration applications.

  12. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  13. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  14. [Effect of Helium on Diamond Films Deposited Using Microwave PCVD].

    PubMed

    Cao, Wei; Ma, Zhi-bin; Tao, Li-ping; Gao, Pan; Li, Yi-cheng; Fu, Qiu-ming

    2015-03-01

    Optical emission spectroscopy (OES) was used to in situ diagnose the CH4-H2-He plasma in order to know the effect of helium on the diamond growth by microwave plasma chemical vapor deposition (MPCVD). The spatial distribution of radicals in the plasma as a function of helium addition was studied. The diamond films deposited in different helium volume fraction were investigated using scanning electron microscope (SEM) and Raman spectroscopy. The results show that the spectra intensity of radicals of H(α), H(β), H(γ), CH and C2 increases with the increasing of helium volume fraction, especially, that of radical H(α) has the most improvement. The spectrum space diagnosis results show that the uniformity of C2, CH radicals in the plasma tends to poor due to the helium addition and resulted in a different thickness along the radial direction The measurement of deposition rate shows that the addition of helium is useful for the improvement of the growth rate of diamond films, due to relative concentration of carbon radicals was increased. The deposition rate increases by 24% when the volume fraction of He was increased from 0 vol. % to 4.7 vol.%. The micrographs of SEM reveal that with the increasing of helium volume fraction, the diamond films' crystallite orientation changes from (111) to disorder and a twins growth becomes obvious. The secondary nucleation density during growth increases because the high relatively concentration of C2 radicals under higher helium volume fraction (4.7 vol. %). In addition, the substrate was etched and sputtered by the plasma, which introduced metallic atoms into the plasma during the deposition of diamond films. Eventually, the existing of secondary nucleation and impurity atoms lead to the appearance of twins and results in the compressive dress. PMID:26117884

  15. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Duta, L.; Oktar, F. N.; Stan, G. E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I. N.

    2013-01-01

    We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  16. The Effect of Surface Wettability on Viscous Film Deposition

    NASA Astrophysics Data System (ADS)

    Herescu, A.; Allen, J.

    2008-11-01

    The viscous deposition of a liquid film on the inside of a capillary has been experimentally investigated and the relationship between the film thickness and surface wettability was examined. With distilled water as a working fluid tests were run in a 500 microns diameter glass tube with less than 30 degrees and 105 degrees contact angle. The thickness h of the deposited film was then estimated from the liquid mass flow rate exiting the capillary and the gas-liquid interface (meniscus) velocity, and compared with Taylor's data and with modified Bretherton's correlation as a function of the Capillary number. In a different set of experiments direct film thickness measurements were obtained by matching the refractive index of the capillary with that of the investigated fluid. The tube was also placed in an index-matched view box to minimize distortion and allow for accurate evaluation of the film thickness. The results were checked against data resulting from the aforementioned procedure. The thickness measurements as well as the meniscus velocity were determined with the aid of a Photron high speed camera with 10000 frames per second sampling capability coupled with a Nikon TE-2000 inverted microscope.

  17. Chemical vapor deposition of amorphous silicon films from disilane

    SciTech Connect

    Bogaert, R.J.

    1986-01-01

    Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

  18. Spray Deposition of Multilayer Gas Barrier Thin Films

    NASA Astrophysics Data System (ADS)

    Givens, Tara; Xiang, Fangming; Grunlan, Jaime

    2015-03-01

    Dip-assisted assembly is the norm for making multilayer thin films (also known as layer-by-layer [LbL] assembly). Spray-based deposition possesses several advantages over dipping, but has not been studied in great detail, especially for gas barrier layers. In this study, polyethylenimine [PEI]/poly(acylic acid) [PAA] bilayers were deposited with varying spray parameters. Spraying time was found to be the most influential parameter to control the roughness, thickness, and gas barrier of the PEI/PAA assembly. A spray-coated sample was prepared using optimized parameters and compared to a dip-coated sample using the same deposition time (5s). The sprayed sample was better in terms of thickness, roughness, and gas barrier. This study is the first report showing that a sprayed multilayer assembly has better properties than its dipped counterpart. These findings could revolutionize the multilayer deposition process, making it more commercially-friendly.

  19. Film coatings for contoured surfaces

    NASA Technical Reports Server (NTRS)

    Flanery, H. E.; Frost, R. K.; Olson, A. J.

    1981-01-01

    Thickness of fluorocarbon elastomer films applied in contoured shapes by vacuum forming is difficult to control at sharply curved areas. Process for spraying contoured fluorocarbon elastomer films of uniform strength and thickness has been used instead of vacuum forming to fabricate curtain covering external tank of Space Shuttle. Conventional spray equipment may be used.

  20. Reactive sputter-deposition of AlN films by dense plasma focus

    SciTech Connect

    Sadiq, Mehboob; Ahmad, S.; Shafiq, M.; Zakaullah, M.; Ahmad, R.; Waheed, A.

    2006-11-15

    A low energy (1.45 kJ) dense plasma focus device is used to deposit thin films of aluminum nitride (AlN) at room temperature on silicon substrates. For deposition of films, a conventional hollow copper anode is replaced with a solid aluminum anode and nitrogen is used as fill gas. The films are deposited using a multiple number of focus shots by placing the substrate in front of the anode. The deposited films are characterized using x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, and a microhardness test. The XRD analysis of the films shows that the deposited films show strong c-axis alignment. The Raman spectra of the films indicate that the deposited films are under compressive stress and crystalline quality decreases with increasing number of focus shots. The microhardness results point toward the uniform deposition of hard AlN layers on silicon substrates.

  1. Synthesis, deposition and characterization of ferroelectric films for electrooptic devices

    NASA Astrophysics Data System (ADS)

    Tunaboylu, Bahadir

    The use of integrable ferroelectric electro-optic thin films is a revolutionary approach in the development of high-speed, low-voltage and high-contrast ratio integrated electro-optic spatial light modulators (SLM) for free-space optoelectronic interconnects. Thin films offer improved performance over bulk ferroelectric (FE) materials because of their lower modulator capacitance and operation at high speeds with low switching energies. Integration of ferroelectric thin films with silicon technology will also impact both the uncooled infrared sensor and dynamic and nonvolatile memory technologies. Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and patassium tantalate niobate (KTN) present great potential for SLMs due to their large electro-optic (EO) effect in the bulk form. The development of thin-film SLMs require electro-optic films of high optical quality with good dielectric and EO properties. High quality thin films of PLZT and KTN were deposited using RF magnetron sputtering on r-plane sapphire substrates which offer integration capability with semiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 at the Curie temperature of 180sp°C, were achieved with remarkably low dissipation loss factor <0.04. The dielectric frequency dispersion was determined to be very small up to 1 Mhz. Also, the absorption of the light in the films was very low. A giant effective quadratic electrooptic effect was demonstrated in PLZT films. These results represent a huge leap forward for the FE-SLM technology with respect to the goal of fully integrated thin film electrooptic light modulators. Microstructural development and phase transformation kinetics in PLZT films were also analyzed for the first time and are presented here. Energy required for the formation of desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT films with larger average grain size showed higher dielectric constants and better EO

  2. Low-temperature epitaxy of Ge films by sputter deposition.

    NASA Technical Reports Server (NTRS)

    Khan, I. H.

    1973-01-01

    It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

  3. Influence of deposition rate on the formation of growth twins in sputter-deposited 330 austenitic stainless steel films

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Anderoglu, O.; Misra, A.; Wang, H.

    2007-04-01

    The authors have studied the influence of deposition rate on the formation of growth twins in sputter-deposited 330 austenitic stainless steel thin films. Transmission electron microscopy shows that the volume fraction of twinned grains increases with increasing deposition rate, whereas the average columnar grain size and twin spacing stay approximately unchanged. These experimental results agree qualitatively with their analytical model that predicts deposition rate dependent formation of growth twins. The film hardness increases monotonically with increasing volume fraction of twinned grains.

  4. Influence of deposition rate on the formation of growth twins in sputter-deposited 330 austenitic stainless steel films

    SciTech Connect

    Zhang, X.; Anderoglu, O.; Misra, A.; Wang, H.

    2007-04-09

    The authors have studied the influence of deposition rate on the formation of growth twins in sputter-deposited 330 austenitic stainless steel thin films. Transmission electron microscopy shows that the volume fraction of twinned grains increases with increasing deposition rate, whereas the average columnar grain size and twin spacing stay approximately unchanged. These experimental results agree qualitatively with their analytical model that predicts deposition rate dependent formation of growth twins. The film hardness increases monotonically with increasing volume fraction of twinned grains.

  5. Preparation of high-purity Cu films by non-mass separated ion beam deposition

    NASA Astrophysics Data System (ADS)

    Lim, J.-W.; Mimura, K.; Miyake, K.; Yamashita, M.; Isshiki, M.

    2003-05-01

    Cu films were deposited on Si(1 0 0) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs + ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O 2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.

  6. Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films.

    PubMed

    Østreng, E; Sønsteby, H H; Øien, S; Nilsen, O; Fjellvåg, H

    2014-11-28

    Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)3 + H2O/O3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 °C, respectively. The crystal structures of NaO(t)Bu and KO(t)Bu were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8'' wafer scale. PMID:25265332

  7. Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition

    SciTech Connect

    Park, Taeyong; Lee, Jaesang; Park, Jingyu; Jeon, Heeyoung; Jeon, Hyeongtag; Lee, Ki-Hoon; Cho, Byung-Chul; Kim, Moo-Sung; Ahn, Heui-Bok

    2012-01-15

    Ruthenium thin films were deposited on argon plasma-treated SiO{sub 2} and untreated SiO{sub 2} substrates by remote plasma atomic layer deposition using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp){sub 2}] as a Ru precursor and ammonia plasma as a reactant. The results of in situ Auger electron spectroscopy (AES) analysis indicate that the initial transient region of Ru deposition was decreased by Ar plasma treatment at 400 deg. C, but did not change significantly at 300 deg. C The deposition rate exhibited linearity after continuous film formation and the deposition rates were about 1.7 A/cycle and 0.4 A/cycle at 400 deg. C and 300 deg. C, respectively. Changes of surface energy and polar and dispersive components were measured by the sessile drop test. The quantity of surface amine groups was measured from the surface nitrogen concentration with AES. Furthermore, the Ar plasma-treated SiO{sub 2} contained more amine groups and less hydroxyl groups on the surface than on untreated SiO{sub 2}. Auger spectra exhibited chemical shifts by Ru-O bonding, and larger shifts were observed on untreated substrates due to the strong adhesion of Ru films.

  8. Beam-Induced Deposition of Thin Metallic Films.

    NASA Astrophysics Data System (ADS)

    Funsten, Herbert Oliver, III

    1990-01-01

    Ion and electron beam induced deposition (BID) of thin (1 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas. Current research has focused primarily on room temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low temperature (50 to 200 K) BID in which the condensation of the precursor gases (SnCl _4 and (CH_3) _4Sn) maximizes the efficiency of the incident radiation which can create and remove nonmetallic fragments located several monolayers below the film surface. The desired properties of the residual metallic films are produced by using as incident radiation either nuclear (35 keV Ar ^+) or electronic (2 keV electrons, 25 keV H^+, or 50 keV H ^+) energy loss mechanisms. Residual films are analyzed ex situ by Scanning Electron Microscopy (SEM), thickness measurements, resistivity measurements, Rutherford Backscattering Spectroscopy (RBS), and infrared spectroscopy. Low temperature BID film growth models, which are derived from both a computer simulation and a mathematical analysis, closely agree. Both the fragmentation and sputtering cross sections for a particular ion and energy are derived for films created from (CH_3) _4Sn. The fragmentation cross section, which corresponds to film growth, is roughly related to the electronic stopping power by the 1.9 power. The loss of carbon in films which were created from (CH_3) _4Sn is strongly dependent on the nuclear stopping power. Film growth rates for low temperature BID have been found to be 10 times those of room temperature BID.

  9. Rapid Deposition of Titanium Oxide and Zinc Oxide Films by Solution Precursor Plasma Spray

    NASA Astrophysics Data System (ADS)

    Ando, Yasutaka

    In order to develop a high rate atmospheric film deposition process for functional films, as a basic study, deposition of titanium oxide film and zinc oxide film by solution precursor plasma spray (SPPS) was conducted in open air. Consequently, in the case of titanium oxide film deposition, anantase film and amorphous film as well as rutile film could be deposited by varying the deposition distance. In the case of anatase dominant film, photo-catalytic properties of the films could be confirmed by wettability test. In addition, the dye sensitized sollar cell (DSC) using the TiO2 film deposited by this SPPS technique as photo voltaic device generates 49mV in OCV. On the other hand, in the case of zinc oxide film deposition, it was proved that well crystallized ZnO films with photo catalytic properties could be deposited. From these results, this process was found to have high potential for high rate functional film deposition process conducted in the air.

  10. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  11. Apparatus and process for deposition of hard carbon films

    DOEpatents

    Nyaiesh, Ali R.; Garwin, Edward L.

    1989-01-01

    A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

  12. Apparatus and process for deposition of hard carbon films

    DOEpatents

    Nyaiesh, Ali R.; Garwin, Edward L.

    1989-01-03

    A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

  13. Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films

    NASA Astrophysics Data System (ADS)

    Toivola, Yvete; Thurn, Jeremy; Cook, Robert F.; Cibuzar, Greg; Roberts, Kevin

    2003-11-01

    The effect of deposition temperature, deposition pressure, or input gas ratio (SiH2Cl2:NH3) on film stress was determined for low-pressure chemical vapor deposited silicon nitride films. Wafer curvature measurements were performed for films deposited on single crystal silicon and amorphous silica wafer substrates to determine film stress σdep, biaxial modulus Ef+, and coefficient of thermal expansion αf. Apparent plane strain film modulus Ēf' and hardness H were measured using depth-sensing indentation. Ellipsometry was used to measure film thickness tf and refractive index n. Infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), forward recoil energy spectroscopy (FReS), and Rutherford backscattering spectroscopy (RBS) experiments were performed to determine film composition. Although film deposition stress varied from -135 MPa (compressive) to 235 MPa (tensile) Ef+, Ēf', H, and αf remained nearly constant. Infrared spectroscopy resolved only Si-N species for all films, and results from FReS on three films confirmed that the hydrogen content was negligible. RBS and XPS indicated that Si/N increased with increased compressive σdep. Ellipsometry and RBS indicated that all films were silicon-rich, to a greater extent with increased compressive σdep. As RBS indicated that atomic density decreased with increased compressive deposition stress, it was concluded that the deposition conditions changed both thermal and intrinsic deposition stress for all films. In particular, intrinsic stress was tensile, and became increasingly tensile for increased Si/N and decreased atomic density. Assuming thermal stress was similar for all films examined here, the intrinsic stress must have varied from changes dependent on the deposition conditions.

  14. Methods of Boron-carbon Deposited Film Removal

    NASA Astrophysics Data System (ADS)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  15. Deposition of transparent, conductive tin oxide films on glass using a radio-frequency induction heater.

    PubMed

    Solano, I; Schwoebel, P R

    2009-12-01

    Tin oxide films are often used as transparent, conductive coatings on glass in the scientific research setting. The standard approach of depositing these films in an oven leads to poor visibility of the substrate and thus inhibits the ready formation of uniform, low resistivity films. In this note we describe a simple tin oxide film deposition technique using a radio-frequency induction heater that allows for in situ visualization of the deposition process and resulting film. Uniform films having resistivities as low as 2 mohm cm with transmittances of approximately 85% in the visible light spectrum were readily deposited. PMID:20059179

  16. Role of deposition time on the properties of ZnO:Tb(3+) thin films prepared by pulsed laser deposition.

    PubMed

    Kumar, Vinod; Ntwaeaborwa, O M; Coetsee, E; Swart, H C

    2016-07-15

    Terbium (Tb(3+)) doped zinc oxide (ZnO:Tb(3+)) thin films were grown on silicon (100) substrates by the pulsed laser deposition technique at different deposition times that varied from 15 to 55min. The effects of deposition time on the structural and optical properties of the ZnO:Tb(3+) films were investigated by X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy. As expected, the thickness of the ZnO:Tb(3+) film has increased with an increase in the deposition time. The photoluminescence intensity of the band to band emission has also increased with deposition time, while the deep level defect emission has decreased. The blue emission was observed from all the ZnO:Tb(3+) thin films deposited at the different deposition times excited by 325nm He-Cd laser, while a green emission was observed when excited by 228nm. PMID:27124806

  17. Photoluminescence of silicon after deposition of polycrystalline diamond films

    SciTech Connect

    Aminev, D. F.; Bagaev, V. S.; Galkina, T. I.; Klokov, A. Yu. Krivobok, V. S.; Ralchenko, V. G.; Savel'ev, A. V.

    2009-09-15

    Low-temperature (5K) photoluminescence of silicon substrates in the range 0.8-1.2 eV is studied before and after deposition of polycrystalline diamond films. The diamond films were deposited in the microwave plasma onto high-purity dislocation-free silicon (with the resitivity {rho} {approx} 3 k{Omega} cm) subjected to mechanical polishing or more delicate chemical and mechanical polishing. The deposition temperature was 750-850 deg. C. In the photoluminescence spectra of the samples with the substrates polished chemically and mechanically, two lines, D{sub 1} and D{sub 2}, corresponding to the dislocation-related emission are recorded. Generation of dislocations in the substrates is caused by efficient adhesion of the diamond film and, as a result, by internal stresses that relax with the formation of dislocations. The experimental spectra are practically identical to the photoluminescence spectra observed in silicon ({rho} {approx} 100 {Omega} cm) with the density of dislocations {approx}10{sup 4} cm{sup -2}.

  18. Deposition, characterization, and laser ablation patterning of YBCO thin films

    NASA Astrophysics Data System (ADS)

    Vase, Per; Yueqiang, Shen; Freltoft, Torsten

    1990-12-01

    High quality epitaxial thin films of YBa 2Cu 3O 7 have been deposited on single-crystal MgO(001) substrates by 355 nm Nd:YAG laser ablation. Through a systematic optimization of the deposition parameters, it was found that for a target-substrate distance of 30 mm, the optimal laser intensity, substrate temperature, and deposition oxygen pressure were 300 MW/cm 2, 750 ° C, and 0.5-1.0 mbar, respectively. Microstrips with dimensions down to 10 μm across were fabricated using both a photoresist technique and laser ablation through a metal mask. The superconducting transition takes place over 1 K, and the critical temperature is reproducible within ±1.5 K, the best result being Tc,0 = 90 K. The highest critical current density measured on a 10 X 0.15 μm 2 strips was 4 X 10 6 A/cm 2 at 77 K . Film patterning using laser ablation through a metal mask was studied in detail to investigate the applicability of this method. Etch rates as a function of laser intensity were measured, and the process was followed in situ by on-line monitoring of the film resistivity.

  19. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  20. Supercritical fluid molecular spray film deposition and powder formation

    DOEpatents

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  1. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  2. Composition and structure of sputter deposited erbium hydride thin films

    SciTech Connect

    ADAMS,DAVID P.; ROMERO,JUAN A.; RODRIGUEZ,MARK A.; FLORO,JERROLD A.; BANKS,JAMES C.

    2000-05-10

    Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.

  3. Metallic alloy targets for high Tc superconducting film deposition

    NASA Astrophysics Data System (ADS)

    Manini, P.; Nigro, A.; Romano, P.; Vaglio, R.

    1989-02-01

    Many experiments are nowadays conducting worldwide on superconducting films based on the recently developed high Tc superconductor materials (YBCO, BISCO, etc). There are different ways to produce these films, among which sputtering and evaporation are most popular. Normally, use is made of oxides, pure metals or compounds as material sources. In the present paper we describe the fabrication process and the physico-chemical characteristics of various metallic alloy components for both sputtering and evaporation processes which show various advantages in terms of stability, easiness of use, purity, flexibility in composition and shape and allow good process control. Deposition techniques and experimental results obtained on thin films of the new superconductors realized starting from these alloys are also reported.

  4. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    PubMed Central

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries. PMID:27459901

  5. Electrochemical deposition of highly-conducting metal dithiolene films.

    PubMed

    Allwright, Emily; Silber, Georg; Crain, Jason; Matsushita, Michio M; Awaga, Kunio; Robertson, Neil

    2016-05-31

    Electrochemical deposition has been used to prepare a thin film of neutral 4',4-(3-alkyl)-thiophene-5',5-hydogen-nickel and copper dithiolenes (Ni-C2, Cu-C2). The application of molecular electrodeposition provides a means to solution process molecular semiconductors of poor solubility, which results from the strong intermolecular interaction required for charge transport. Both Ni-C2 and Cu-C2 form continuous thin films that show intense NIR absorptions, extending to 1800 nm and 2000 nm respectively giving evidence for the strong intermolecular interactions in the solid state. Both films are highly conducting and temperature dependence of resistance gave an activation energy of 0.42 eV and 0.072 eV respectively, with the near-metallic behaviour of Cu-C2 attributed to the additional presence of an unpaired electron. PMID:27184422

  6. Magnetotransport in Pulsed Laser Deposited Manganese Doped Lead Sulfide Films

    NASA Astrophysics Data System (ADS)

    Rimal, Gaurab; Sapkota, Keshab; Maksymov, Artur; Spinu, Leonard; Wang, Wenyong; Tang, Jinke

    Diluted magnetic semiconductors (DMS) have been proposed as promising candidates for spintronic applications. Most research in this field has been confined to III-V and II-VI semiconductor system. There are reports on IV-VI semiconductors, however reports on lead sulfide (PbS) based DMS is limited. We study the transport, magnetic and structural properties of manganese doped lead sulfide (Mn:PbS) films produced by pulsed laser deposition (PLD). The films are found to show hopping transport at low tempeature. Low temperature magnetoresistance (MR) studies show that the sign of MR can be changed by application of gate voltage. The magnetic properties of the films were also studied which showed ferromagnetic behavior at room temperature.

  7. Nanostructured zinc oxide thin film by simple vapor transport deposition

    NASA Astrophysics Data System (ADS)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  8. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films.

    PubMed

    Kim, Semin; Jang, Lindy K; Park, Hyun S; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries. PMID:27459901

  9. Properties of zirconia thin films deposited by laser ablation

    NASA Astrophysics Data System (ADS)

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Mustaciosu, C.; Dinescu, M.

    2013-11-01

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO2 target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm-2. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  10. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    NASA Astrophysics Data System (ADS)

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-07-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  11. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  12. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    NASA Astrophysics Data System (ADS)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  13. High-rate deposition of hydrogenated amorphous silicon films and devices

    SciTech Connect

    Luft, W.

    1987-04-01

    This report summarizes the status of high-rate deposition technologies associated with amorphous silicon thin films for photovoltaic applications. The report lists (1) deposition rates for a-Si:H films according to source and method and (2) efficiencies and other parameters of a-Si:H solar cells. Two main deposition source materials, silane and disilane, are discussed, as well as effects of boron doping. The effects of various deposition parameters on film characteristics and on deposition rate are presented, as well as the effects of annealing on high-deposition-rate films. Light-induced effects are also discussed. Finally, progress and problems in this field of study are summarized.

  14. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  15. 21 CFR 177.1380 - Fluorocarbon resins.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Fluorocarbon resins. 177.1380 Section 177.1380 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) INDIRECT FOOD ADDITIVES: POLYMERS Substances for Use as Basic Components of Single and Repeated Use Food...

  16. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  17. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  18. Plasma deposited diamond-like carbon films for large neutralarrays

    SciTech Connect

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  19. Deposition of adherent Ag-Ti duplex films on ceramics in a multiple-cathode sputter deposition system

    NASA Technical Reports Server (NTRS)

    Honecy, Frank S.

    1992-01-01

    The adhesion of Ag films deposited on oxide ceramics can be increased by first depositing intermediate films of active metals such as Ti. Such duplex coatings can be fabricated in a widely used three target sputter deposition system. It is shown here that the beneficial effect of the intermediate Ti film can be defeated by commonly used in situ target and substrate sputter cleaning procedures which result in Ag under the Ti. Auger electron spectroscopy and wear testing of the coatings are used to develop a cleaning strategy resulting in an adherent film system.

  20. Peripheral vascular responses to fluorocarbon administration.

    PubMed

    Faithfull, N S; King, C E; Cain, S M

    1987-03-01

    To detect the local effect of hyperoxia on skeletal muscle vasculature, 2.5-ml boluses of oxygenated or deoxygenated fluorocarbon emulsion (F-O2 or F-N2) were washed through the hindlimb of anesthetized dogs at prevailing arterial pressure. Instantaneous hematocrit changes at the outflow were registered and stored in digital form with the red cells serving as the nondiffusible tracer in the resulting washout curves. A gamma density function was fitted and the gamma index (1/square root of alpha) was derived as a measure of skewness or perfusion heterogeneity. After recovery from the initial hypotensive reaction to fluorocarbon emulsion, washout curves for F-O2 and F-N2 were registered and blood samples were taken during 40 min of normoxia followed by 40 min of hypoxic hypoxia. The initial reaction to fluorocarbon significantly increased the gamma index so that the experiments began with a high index of perfusion heterogeneity in the limb vasculature. No significant difference was seen between F-O2 and F-N2 in normoxia but F-O2 maintained greater heterogeneity during hypoxia. The increased heterogeneity observed after the fluorocarbon reaction correlated highly with the severity of the hypotensive reaction which was also found to correlate inversely with the ability of the limb musculature to increase the O2 extraction ratio with onset of hypoxia. This blunting of microcirculatory reactivity to hyperoxia and hypoxia was attributed, in part, to the initial transient fluorocarbon reaction, possibly mediated by complement activation. PMID:3587075

  1. The influence of the deposition time on morphological and optical properties of Cu x S films deposited on polypropylene substrate

    NASA Astrophysics Data System (ADS)

    Pop, Andreea E.; Popescu, Violeta; Dinescu, Adrian; Batin, Medina N.

    2013-08-01

    Copper sulfide (Cu x S) films deposited on polypropylene substrate were obtained by chemical bath deposition (CBD) method. The influence of the deposition time on the morphology of Cu x S films was studied by means of scanning electron microscopy. We have found that the average particles dimension increased from 37 to 49 nm with the increase of deposition time from 20 to 30 minutes. The study of optical properties of the copper sulfide films was carried out based on optical transmission spectra recorded in the 400-1000 nm wavelength range. The optical constants, such as refractive index, extinction coefficient and dielectric constant as well as electrical and optical conductivity of Cu x S films were calculated. The obtained values are in accordance with the ones reported in the literature:We have shown that both, morphological and optical properties of Cu x S films are strongly affected by the deposition time.

  2. Properties of pulsed laser deposited fluorinated hydroxyapatite films on titanium

    SciTech Connect

    Rau, J.V.; Smirnov, V.V.; Laureti, S.; Generosi, A.; Varvaro, G.; Fosca, M.; Ferro, D.; Cesaro, S. Nunziante; Albertini, V. Rossi; Barinov, S.M.

    2010-09-15

    Fluorinated hydroxyapatite coated titanium was investigated for application as implant coating for bone substitute materials in orthopaedics and dentistry. Pulsed laser deposition technique was used for films preparation. Fluorinated hydroxyapatite target composition, Ca{sub 10}(PO{sub 4}){sub 6}F{sub 1.37}(OH){sub 0.63}, was maintained at 2 J/cm{sup 2} of laser fluence and 500-600 {sup o}C of the substrate temperature. Prepared films had a compact microstructure, composed of spherical micrometric-size aggregates. The average surface roughness resulted to be of 3 nm for the film grown at 500 {sup o}C and of 10 nm for that grown at 600 {sup o}C, showing that the temperature increase did not favour the growth of a more fine granulated surface. The films were polycrystalline with no preferential growth orientation. The films grown at 500-600 {sup o}C were about 8 {mu}m thick and possessed a hardness of 12-13 GPa. Lower or higher substrate temperature provides the possibility to obtain coatings with different fine texture and roughness, thus tayloring them for various applications.

  3. Development of Thick-Film Thermoelectric Microcoolers Using Electrochemical Deposition

    NASA Technical Reports Server (NTRS)

    Fleurial, J.-P.; Borshchevsky, A.; Ryan, M. A.; Phillips, W. M.; Snyder, J. G.; Caillat, T.; Kolawa, E. A.; Herman, J. A.; Mueller, P.; Nicolet, M.

    2000-01-01

    Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 gm thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/sq cm over a 30 to 60 K temperature difference can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 microns thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te(2.95)Se(0.05) and p-type Bi(0.5)Sb(1.5)Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.

  4. Thickness dependence of resistivity for Cu films deposited by ion beam deposition

    NASA Astrophysics Data System (ADS)

    Lim, J.-W.; Mimura, K.; Isshiki, M.

    2003-07-01

    The thickness dependence of the resistivity for Cu films deposited by ion beam deposition (IBD) was evaluated using Fuchs-Sondheimer (F-S) model for electron surface scattering and Mayadas-Shatzkes (M-S) model for electron grain boundary scattering. For fitting the F-S and M-S models to the experimental data, the approximate equations proposed in both models were discussed and it was confirmed that the experimental resistivity of the Cu films could be described well by a simple form combined of the approximate equations for both models. By means of the simple form in this work, the most reasonable fit to the experimental data could be obtained under the conditions of the surface scattering coefficient p=0 and the reflection coefficient at grain boundary R=0.40.

  5. Cation Engineering of Cu-ferrite Films Deposited by Alternating Target Laser Ablation Deposition

    SciTech Connect

    Yang,A.; Chen, Z.; Islam, S.; Vittoria, C.; Harris, V.

    2008-01-01

    Epitaxial copper ferrite thin films were deposited on MgO substrates by the alternating target laser ablation deposition method. A series of films was studied to explore the impact of oxygen operating pressure, substrate temperature, and the ratio of laser shots incident on each target upon the magnetic, structural, and atomic structural properties. The highest saturation magnetization, 2800?G, was achieved at a 90?mTorr oxygen pressure and at 650? C for the substrate temperature. This value is 65% higher than the room temperature magnetization for bulk equilibrium samples. The inversion parameter was measured by extended x-ray absorption fine structure analysis. The sample having the highest saturation magnetization had a corresponding inversion parameter (percentage of Cu ion octahedral site occupancy) of 51.5% compared with the bulk value of 85%.

  6. Optimization and testing of solid thin film lubrication deposition processes

    NASA Astrophysics Data System (ADS)

    Danyluk, Michael J.

    A novel method for testing solid thin films in rolling contact fatigue (RCF) under ultra-high vacuum (UHV) and high rotational speeds (130 Hz) is presented in this thesis. The UHV-RCF platform is used to quantify the adhesion and lubrication aspects of two thin film coatings deposited on ball-bearings using a physical vapor deposition ion plating process. Plasma properties during ion plating were measured using a Langmuir probe and there is a connection between ion flux, film stress, film adhesion, process voltage, pressure, and RCF life. The UHV-RCF platform and vacuum chamber were constructed using off-the-shelf components and 88 RCF tests in high vacuum have been completed. Maximum RCF life was achieved by maintaining an ion flux between 10 13 to 1015 (cm-2 s-1) with a process voltage and pressure near 1.5 kV and 15 mTorr. Two controller schemes were investigated to maintain optimal plasma conditions for maximum RCF life: PID and LQR. Pressure disturbances to the plasma have a detrimental effect on RCF life. Control algorithms that mitigate pressure and voltage disturbances already exist. However, feedback from the plasma to detect disturbances has not been explored related to deposition processes in the thin-film science literature. Manometer based pressure monitoring systems have a 1 to 2 second delay time and are too slow to detect common pressure bursts during the deposition process. Plasma diagnostic feedback is much faster, of the order of 0.1 second. Plasma total-current feedback was used successfully to detect a typical pressure disturbance associated with the ion plating process. Plasma current is related to ion density and process pressure. A real-time control application was used to detect the pressure disturbance by monitoring plasma-total current and converting it to feedback-input to a pressure control system. Pressure overshoot was eliminated using a nominal PID controller with feedback from a plasma-current diagnostic measurement tool.

  7. The effect of deposition rate on the intrinsic stress in copper and silver thin films

    NASA Astrophysics Data System (ADS)

    Del Vecchio, A. L.; Spaepen, F.

    2007-03-01

    The effect of changing the deposition rate on the development of stress in evaporated copper and silver thin films deposited on oxidized silicon was examined. In situ stress measurements were made during deposition in ultrahigh vacuum using a scanning laser curvature system. In some experiments, the deposition rate was alternated without interruption of deposition. For copper thin films, a change in deposition rate has no effect on the development of the tensile stress, while the magnitude of the postcoalescence compressive stress decreases with increasing deposition rate. In silver films, the film thickness at the tensile maximum increases slightly with increasing deposition rate, while the magnitude of the postcoalescence compressive stress again decreases with increasing deposition rate. Analysis of the heat flow during deposition shows that the radiative heating and condensation contribute roughly equally to the temperature rise of the sample.

  8. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    SciTech Connect

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L.; Mayo, B.

    1998-10-29

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  9. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    SciTech Connect

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L.; Mayo, B.

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  10. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  11. Sputtering deposition of aluminium molybdenum alloy thin film anodes for thin film microbatteries

    NASA Astrophysics Data System (ADS)

    Thirumoolam, Mani Chandran; Sivaramakrishnan, Balaji; Devarajan, Mutharasu

    2015-05-01

    Al5Mo thin film anodes for Li-ion batteries were prepared using DC sputtering under different conditions, the latter being specified as deposition at room temperature (S0), deposition at 300°C (S1), and deposition at room temperature followed by thermal annealing at 300°C (S2). The thin films were deposited using an aluminum target tiled with molybdenum discs at a ratio calculated based on the theoretical sputtering yields. The structural and compositional analyses performed with x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDX) confirmed the Al5Mo compound formation and the Al/Mo elemental ratio, respectively. The compound formation was observed to be evident only for the thin films subjected to heat treatment during or after deposition. Scanning electron micrographs reveal a higher porosity of approximately 23% for sample S0 and a lower porosity of around 18% for sample S1. The chronopotentiometry results show a higher volumetric specific capacity of approximately 197 mAh/cm3 for sample S1. Capacity increments have been observed for all samples upon charge-discharge cycles, whose values after 25 cycles for samples S0, S1, and S2 were 41.2%, 20.4%, and 21.1%, respectively. [Figure not available: see fulltext.

  12. Optical switching of vanadium dioxide thin films deposited by reactive pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Soltani, M.; Chaker, M.; Haddad, E.; Kruzelecky, R. V.; Nikanpour, D.

    2004-05-01

    The parameters of reactive pulsed laser deposition were successfully optimized for fabrication of vanadium dioxide thin films. It is observed that the O2 concentration in Ar gas and the total deposition pressure are critical in stabilizing the single VO2 phase. Thermochromic VO2 and V1-xWxO2 (x=0.014) thin films were synthesized on various substrates (silicon, quartz, and sapphire) at 5% of O2/Ar ratio gas and total pressure of 90 mTorr. The structural properties of the deposited films were analyzed by x-ray diffraction, while their semiconductor-to-metal phase transitions were studied by electrical resistivity using the four-point technique and infrared transmittance from room temperature up to 100 °C. The observed transition temperature was about 36 °C for W-doped VO2 compared to 68 °C for VO2 films. This transition temperature was then lowered by about 22.85 °C per 1 at. % of W added. The temperature coefficient of resistance was about 1.78%/°C for VO2 and about 1.90%/°C for W-doped VO2. Using the pump-probe experiment, the application of these thermochromic films as optical switches was demonstrated at the wavelength of 1.55 μm. The transmission switching was about 25 dB for VO2 and 28 dB for W-doped VO2. In addition, application of VO2 on optical fiber components was demonstrated by direct VO2 coating on the end faces of cleaved single mode optical fibers and optical fiber connectors. .

  13. Zinc oxide epitaxial thin film deposited over carbon on various substrate by pulsed laser deposition technique.

    PubMed

    Manikandan, E; Moodley, M K; Sinha Ray, S; Panigrahi, B K; Krishnan, R; Padhy, N; Nair, K G M; Tyagi, A K

    2010-09-01

    Zinc Oxide (ZnO) is a promising candidate material for optical and electronic devices due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). For applications in various fields such as light emitting diode (LED) and laser diodes, growth of p-type ZnO is a prerequisite. ZnO is an intrinsically n-type semiconductor. In this paper we report on the synthesis of Zinc Oxide-Carbon (ZnO:C) thin films using pulsed laser deposition technique (PLD). The deposition parameters were optimized to obtain high quality epitaxial ZnO films over a carbon layer. The structural and optical properties were studied by glazing index X-ray diffraction (GIXRD), photoluminescence (PL), optical absorption (OA), and Raman spectroscopy. Rutherford backscattering spectroscopy (RBS), scanning electron microscopy with energy dispersive spectroscopy (SEMEDS) and atomic force microscopy (AFM) were employed to determine the composition and surface morphology of these thin films. The GIXRD pattern of the synthesized films exhibited hexagonal wurtzite crystal structure with a preferred (002) orientation. PL spectroscopy results showed that the emission intensity was maximum at -380 nm at a deposition temperature of 573 K. In the Raman spectra, the E2 phonon frequency around at 438 cm(-1) is a characteristic peak of the wurtzite lattice and could be seen in all samples. Furthermore, the optical direct band gap of ZnO films was found to be in the visible region. The growth of the epitaxial layer is discussed in the light of carbon atoms from the buffer layer. Our work demonstrates that the carbon is a novel dopant in the group of doped ZnO semiconductor materials. The introduction of carbon impurities enhanced the visible emission of red-green luminescence. It is concluded that the carbon impurities promote the zinc related native defect in ZnO. PMID:21133080

  14. Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

    SciTech Connect

    Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.; Bierschenk, Eric J.; Gren, Cameron K.; Hanusa, Timothy P.

    2010-03-15

    Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.

  15. Substrate heating measurements in pulsed ion beam film deposition

    SciTech Connect

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J.; Tallant, D.R.; Thompson, M.O.

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  16. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  17. Vacuum deposited polymer films: Past, present, and future applications

    SciTech Connect

    Affinito, J.; Martin, P.; Gross, M.; Bennett, W.

    1994-11-01

    Two extremely high rate processes have been developed for the vacuum deposition of polymer thin films. Dubbed the PML (for Polymer Multi-Layer) and LML (for Liquid Multi-Layer) processes, the PML technique was originally developed for the manufacture of polymer/aluminum surface mount capacitors while the LML method arose from a need to fabricate lithium polymer batteries. These processes have since been found to be compatible with most other vacuum deposition techniques in, integrated, in-line coating processes. Battelle has developed an extensive program, and a great deal of hardware, to pursue a wide variety of PML and LML applications which integrate these two process technologies with other, conventional, vacuum deposition methods. The historical development of the technologies is reviewed and the Battelle PML/LML facilities are described. Current Battelle work involving solar thermal control films, PML QWOTs, and polymer/metal high reflectors are also discussed. Battelle PML work that is just starting, involving non-linear optical materials/devices, lithium polymer battery fabrication, electrochromic devices, and polymer/oxide multilayers, is discussed as well.

  18. Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Peters, P.; George, M. A.

    1999-01-01

    ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

  19. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  20. Tribological Properties of Segment-Structured DLC Films Coated on Stainless Steel Substrate

    NASA Astrophysics Data System (ADS)

    Kuroda, Tsuyoshi; Takashima, Mai; Ohtake, Naoto; Takai, Osamu

    Diamond-like carbon (DLC) films have low friction coefficient against variety of materials and high wear resistance; however, DLCs are often damaged when the DLC film is distorted with deformation of the substrate. Segment-structured DLC (S-DLC) coating has been developed to improve these weak points of DLC films. The S-DLC coating is a technique to separate the DLC film into the small segments. The purpose of this study is to fabricate S-DLC film on stainless steel substrate and functionalize DLC films on the substrate based on S-DLC film. In this study, fluorocarbon polymer embedded segment-structured DLC (FC-S-DLC) film was fabricated by spraying fluorocarbon polymer into the grooves between the DLC segments. The DLC films were deposited by a RF plasma chemical vapor deposition (CVD) method. Evaluations of tribological properties of these high-functional DLC films were performed under plane contact condition by pin-on-disk (PoD) test. As a result, the S-DLC film exhibited better tribological properties than that of continuous DLC film. Furthermore, the FC-S-DLC coating exhibited the most excellent tribological property among all samples and gave high wear resistance and steady friction coefficient to stainless steel substrates at a plane contact pressure of 0.16˜0.24MPa.

  1. Structure and thermoelectric properties of obliquely deposited bismuth films

    SciTech Connect

    Ukhlinov, G.A.; Kosakovskaya, Z. Ya.; Vigdorovich, V.N.

    1986-11-01

    Bismuth films were deposited in a vacuum evaporation equipment at a vacuum of 10/sup -2/ Pa. The microstructure of the films was investigaged by optical and scanning-electron microscopy. The orientation of the crystals was studied with a UEMV-100K electron microscope and a DRON-2 x-ray diffractometer using Fe K..cap alpha.. radiation. We carried out a survey both of the diffractograms of the films to reveal the type of planes parallel to the substrate surface and of the texture patterns from the 0009 reflection by tilting the samples relative to the horizontal axis on a GP-2 tilting attachment. The electrical resistance of the films was measured by the four-probe method and the longitudinal thermo-emf using two probes on a gradient thermoblock. The transverse thermo-emf was determined by irradiating the samples by a heat flux with an intensity of 1 W/cm/sup 2/ from an infrared heating lamp.

  2. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  3. Investigation of silicon surface passivation by silicon nitride film deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

  4. Thin nanocrystalline zirconia films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dikovska, A. Og; Atanasova, G. B.; Avdeev, G. V.; Strijkova, V. Y.

    2016-03-01

    In the present work, thin zirconia films were prepared by pulsed laser deposition at different substrate temperatures and oxygen partial pressures. The substrate temperature was varied from 400 °C to 600 °C, and the oxygen pressure, from 0.01 to 0.05 mbar. The effect was investigated of the substrate temperature and oxygen pressure on the formation of m-zirconia and t-zirconia phases.The formation of a cubic phase of ZrO2 by using targets doped with 3 and 8 mol % content Y2O3 was also investigated. The variation in the optical properties was studied and discussed in relation with the zirconia films' microstructure.

  5. Water-Assisted Vapor Deposition of PEDOT Thin Film.

    PubMed

    Goktas, Hilal; Wang, Xiaoxue; Ugur, Asli; Gleason, Karen K

    2015-07-01

    The synthesis and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) using water-assisted vapor phase polymerization (VPP) and oxidative chemical vapor deposition (oCVD) are reported. For the VPP PEDOT, the oxidant, FeCl3 , is sublimated onto the substrate from a heated crucible in the reactor chamber and subsequently exposed to 3,4-ethylenedioxythiophene (EDOT) monomer and water vapor in the same reactor. The oCVD PEDOT was produced by introducing the oxidant, EDOT monomer, and water vapor simultaneously to the reactor. The enhancement of doping and crystallinity is observed in the water-assisted oCVD thin films. The high doping level observed at UV-vis-NIR spectra for the oCVD PEDOT, suggests that water acts as a solubilizing agent for oxidant and its byproducts. Although the VPP produced PEDOT thin films are fully amorphous, their conductivities are comparable with that of the oCVD produced ones. PMID:25882241

  6. Deposition of polyaniline film onto porous silicon layer

    SciTech Connect

    Parkhutik, V.P.; Martinez-Duart, J.M.; Callegja, R.D.; Matveeva, E.M.

    1993-12-31

    Presently porous silicon (PS) layers are being considered a promising visible light emitting sources. Current research concentrates on the understanding of the nature of the light emission and the development of practical luminescent devices. The last goal is to find an appropriate solid contact to the rough surface of PS layers to ensure high electric conductivity and transparency. The aim of this work is to study the deposition of polyaniline (PANI) films onto porous silicon layers as an alternative to indium tin oxide (ITO) as the electrode.

  7. Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  8. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  9. Prussian Blue thin films: electrochemical deposition and characterization

    NASA Astrophysics Data System (ADS)

    Pasa, Andre A.; Alamini, Marilia F.; da Silva, Rene C.; Zoldan, Vinícius C.; Isoppo, Eduardo A.; Rodrigues Filho, Ubirajara P.; Klein, Aloísio N.

    2010-03-01

    Prussian Blue thin films Fe4[Fe(CN)6]3 are relevant for many applications such as molecular magnets, electrochromism and electrochemical sensors. In this work, Prussian Blue layers were grown through electrochemical deposition on 50 nm Au coated n-type Si (100) substrates, at room temperature, from electrolyte containing HCl, KCl, FeCl3 and K3[Fe(CN)6]. The layer formation was promoted by scanning sequentially the applied voltage, varying the scan rate and the number of cycles. Emphasis was given to the characterization of the samples with scanning and transmission electron microscopy, X-ray diffraction and atomic force microscopy. Pyramidal grains were typically observed with size increasing with the deposition time. The analysis of the topographic images allowed the determination of important practical parameters as the saturation roughness and correlation length, and scaling regime and exponents.

  10. Improvement in mechanical and barrier properties of polyethylene blown films using atomic layer deposition

    SciTech Connect

    Lee, Gyeong Beom; Hak Song, Seung; Wook Moon, Sung; Woo Kim, Jun; Hyung Shim, Joon; Choi, Byoung-Ho; Moo Heo, Young

    2014-01-15

    Recently, thin films deposited on polymer substrates have been widely utilized as encapsulation barriers in electronic applications such as flexible displays, packaging films, and organic light-emitting diodes. The barrier and mechanical properties of these films are critical aspects when using them for protecting the inner modules of electronic devices from environmental factors such as moisture, oxygen, and sunlight. In particular, polymers can be degraded or decomposed more easily than other materials under such environmental conditions. Therefore, polymer films can be deposited using thin functional materials; however, suitable deposition methods for polymers are scarce owing to many limitations such as low melting/glass transition temperature, thermal degradation, and oxidation. In this study, a thin alumina oxide film was deposited on a high-density polyethylene blown film by using atomic layer deposition. The mechanical and barrier properties of the alumina oxide film deposited on the polyethylene film were characterized by a microtensile test and water vapor transmission rate test. Process conditions such as process temperature, plasma surface treatment, and number of cycles were varied to ascertain the reliability of the thin alumina oxide film deposited on the high-density polyethylene blown film. The results showed that the barrier property of the deposited film improved upon the application of plasma surface treatment, and that its mechanical properties varied under different process conditions.

  11. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  12. Femtosecond Laser Ablation of Frozen Alcohols for Deposition of Diamond-Like Carbon Thin Films

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Inoue, Wataru; Inoue, Narumi

    2008-06-01

    A 790 nm, 130 fs Ti:sapphire laser pulse ablated various frozen alcohols (CnH2n + 1OH, n = 1-6) to deposit diamond-like carbon (DLC) thin films. The larger the carbon number (n) of the alcohols, the higher the hydrogen content of the DLC films; the sp3 carbon content ranged from 35 to 45%. The hydrogen content caused a change in the optical band gap of the films. Moreover, the deposition rate of the films increased linearly as the carbon number increased. The deposition rate did not simply relate to the amount of carbon species ejected from the frozen alcohols. Even though carbon species were largely generated, the ejected oxygen radicals etched the carbon to lower the deposition rate. When we used frozen benzene as a laser target, DLC thin films were not deposited. By dissolving boric acid in an alcohol, we could deposit boron-doped DLC thin films.

  13. Self-supported aluminum thin films produced by vacuum deposition process

    NASA Technical Reports Server (NTRS)

    Neff, J. E.; Timme, R. W.

    1966-01-01

    Self-supported aluminum thin film is produced by vacuum depositing the film on a polyvinyl formal resin film and then removing the resin by radiant heating in the vacuum. The aluminum film can be used as soon as the resin is eliminated.

  14. Fluorocarbon adsorption in hierarchical porous frameworks.

    PubMed

    Motkuri, Radha Kishan; Annapureddy, Harsha V R; Vijaykumar, M; Schaef, H Todd; Martin, Paul F; McGrail, B Peter; Dang, Liem X; Krishna, Rajamani; Thallapally, Praveen K

    2014-01-01

    Metal-organic frameworks comprise an important class of solid-state materials and have potential for many emerging applications such as energy storage, separation, catalysis and bio-medical. Here we report the adsorption behaviour of a series of fluorocarbon derivatives on a set of microporous and hierarchical mesoporous frameworks. The microporous frameworks show a saturation uptake capacity for dichlorodifluoromethane of >4 mmol g(-1) at a very low relative saturation pressure (P/Po) of 0.02. In contrast, the mesoporous framework shows an exceptionally high uptake capacity reaching >14 mmol g(-1) at P/Po of 0.4. Adsorption affinity in terms of mass loading and isosteric heats of adsorption is found to generally correlate with the polarizability and boiling point of the refrigerant, with dichlorodifluoromethane > chlorodifluoromethane > chlorotrifluoromethane > tetrafluoromethane > methane. These results suggest the possibility of exploiting these sorbents for separation of azeotropic mixtures of fluorocarbons and use in eco-friendly fluorocarbon-based adsorption cooling. PMID:25006832

  15. Fluorocarbon adsorption in hierarchical porous frameworks

    NASA Astrophysics Data System (ADS)

    Motkuri, Radha Kishan; Annapureddy, Harsha V. R.; Vijaykumar, M.; Schaef, H. Todd; Martin, Paul F.; McGrail, B. Peter; Dang, Liem X.; Krishna, Rajamani; Thallapally, Praveen K.

    2014-07-01

    Metal-organic frameworks comprise an important class of solid-state materials and have potential for many emerging applications such as energy storage, separation, catalysis and bio-medical. Here we report the adsorption behaviour of a series of fluorocarbon derivatives on a set of microporous and hierarchical mesoporous frameworks. The microporous frameworks show a saturation uptake capacity for dichlorodifluoromethane of >4 mmol g-1 at a very low relative saturation pressure (P/Po) of 0.02. In contrast, the mesoporous framework shows an exceptionally high uptake capacity reaching >14 mmol g-1 at P/Po of 0.4. Adsorption affinity in terms of mass loading and isosteric heats of adsorption is found to generally correlate with the polarizability and boiling point of the refrigerant, with dichlorodifluoromethane >chlorodifluoromethane >chlorotrifluoromethane >tetrafluoromethane >methane. These results suggest the possibility of exploiting these sorbents for separation of azeotropic mixtures of fluorocarbons and use in eco-friendly fluorocarbon-based adsorption cooling.

  16. Fluorocarbon adsorption in hierarchical porous frameworks

    SciTech Connect

    Motkuri, RK; Annapureddy, HVR; Vijaykumar, M; Schaef, HT; Martin, PF; McGrail, BP; Dang, LX; Krishna, R; Thallapally, PK

    2014-07-09

    Metal-organic frameworks comprise an important class of solid-state materials and have potential for many emerging applications such as energy storage, separation, catalysis and bio-medical. Here we report the adsorption behaviour of a series of fluorocarbon derivatives on a set of microporous and hierarchical mesoporous frameworks. The microporous frameworks show a saturation uptake capacity for dichlorodifluoromethane of >4 mmol g(-1) at a very low relative saturation pressure (P/P-o) of 0.02. In contrast, the mesoporous framework shows an exceptionally high uptake capacity reaching >14 mmol g(-1) at P/P-o of 0.4. Adsorption affinity in terms of mass loading and isosteric heats of adsorption is found to generally correlate with the polarizability and boiling point of the refrigerant, with dichlorodifluoromethane >chlorodifluoromethane >chlorotrifluoromethane >tetrafluoromethane >methane. These results suggest the possibility of exploiting these sorbents for separation of azeotropic mixtures of fluorocarbons and use in eco-friendly fluorocarbon-based adsorption cooling.

  17. Oxygen partial pressure dependent optical properties of glancing angle deposited (GLAD) Ta2O5 films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; Misal, J. S.; Pratap, C.; Sahoo, N. K.

    2016-05-01

    Experiments were carried out on Ta2O5 oxide thin films by asymmetric bipolar pulsed DC magnetron sputtering using a new hybrid combination of conventional (normal incidence) deposition and glancing angle deposition (GLAD) geometries. The films were prepared with varying O2 partial pressure. The ellipsometry characterization reveals a systematic variation in refractive index, which decreased from 2.2 in the normal films to an average 1.78 in the GLAD films. The bandgap of these GLAD films is slightly higher as compared to normal films. Overall transmission of the GLAD films is increased is by ~ 15 % implying a reduction in the refractive index for potential optical filtering device applications. The results were further supported by X-ray reflectivity measurements which show an effective double layer structure in GLAD consisting of layers with different densities of the same Ta2O5 material.

  18. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  19. Chemical bath deposition of II-VI compound thin films

    NASA Astrophysics Data System (ADS)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  20. Characterization of carbon nitride films deposited by hollow cathode discharge process

    NASA Astrophysics Data System (ADS)

    Balaceanu, M.; Grigore, E.; Truica-Marasescu, F.; Pantelica, D.; Negoita, F.; Pavelescu, G.; Ionescu, F.

    2000-03-01

    Elastic recoil detection analysis (ERDA) has been applied to determine the composition of carbon nitride and hydrogenated carbon nitride films prepared by hollow cathode discharge process. The films were deposited on Si (1 1 1) substrates. The films were also characterized by Fourier transform infrared spectroscopy (FTIR). The influence of the main deposition parameters (substrate bias voltage, nitrogen injection mode) on the film properties was investigated.

  1. Characterisation of CdO thin films deposited by activated reactive evaporation

    NASA Astrophysics Data System (ADS)

    Ramakrishna Reddy, K. T.; Sravani, C.; Miles, R. W.

    1998-02-01

    The paper describes the preparation of cadmium oxide thin films produced by "activated reactive evaporation" onto heated glass substrates. The structural, electrical and optical properties of the deposited films were investigated and the effect of substrate temperature on the different physical properties of the films investigated. Highly conducting, polycrystalline CdO films with good transmittances were prepared by controlling the deposition temperature. These layers can be used to produce CdO/CdTe solar cells with efficiencies > 7%.

  2. Study of anisotropy of spin cast and vapor deposited polyimide films using internal reflection techniques

    SciTech Connect

    Liberman, V.

    1996-11-01

    We have compared anisotropy of spin cast and vapor deposited polyimide (VDP) films, using internal reflection infrared spectroscopy. The films were deposited directly on the internal reflection element. We find that spin cast films are more anisotropic than their VDP counterparts, with the polyimide chains tending to align parallel to the substrate. Both films are found to contain more and less ordered regions. Within the ordered regions, the plane of the phenyl ring tends to align parallel to the substrate.

  3. Deposition of Nanostructured Thin Film from Size-Classified Nanoparticles

    NASA Technical Reports Server (NTRS)

    Camata, Renato P.; Cunningham, Nicholas C.; Seol, Kwang Soo; Okada, Yoshiki; Takeuchi, Kazuo

    2003-01-01

    Materials comprising nanometer-sized grains (approximately 1_50 nm) exhibit properties dramatically different from those of their homogeneous and uniform counterparts. These properties vary with size, shape, and composition of nanoscale grains. Thus, nanoparticles may be used as building blocks to engineer tailor-made artificial materials with desired properties, such as non-linear optical absorption, tunable light emission, charge-storage behavior, selective catalytic activity, and countless other characteristics. This bottom-up engineering approach requires exquisite control over nanoparticle size, shape, and composition. We describe the design and characterization of an aerosol system conceived for the deposition of size classified nanoparticles whose performance is consistent with these strict demands. A nanoparticle aerosol is generated by laser ablation and sorted according to size using a differential mobility analyzer. Nanoparticles within a chosen window of sizes (e.g., (8.0 plus or minus 0.6) nm) are deposited electrostatically on a surface forming a film of the desired material. The system allows the assembly and engineering of thin films using size-classified nanoparticles as building blocks.

  4. Electrochemical deposition of conducting ruthenium oxide films from solution

    SciTech Connect

    Anderson, D.P.; Warren, L.F.

    1984-02-01

    In the last decade, ruthenium oxide, RuO /sub x/ (x less than or equal to 2), has been used extensively as the active anode electrocatalyst constituent for Cl/sub 2/ and O/sub 2/ evolution reactions, in chlorate production, and in metal electrowinning from mixed chloride-sulfate solutions. More recently, this material has been incorporated in several light-induced water electrolysis schemes and apparently possesses the ability to inhibit CdS photocorrosion by acting as a hole scavenger. The numerous applications for this catalyst material certainly warrant further studies of its electrochemical properties on a variety of substrates, e.g., semiconductors. The lack of a simple technique for controlled deposition of ruthenium oxide onto conducting substrates prompted us to investigate an electrochemical approach to this problem. We describe here a new way to electrochemically deposit conducting films of hydrated ruthenium oxide from an aqueous solution of the benzeneruthenium (II)aqua complex. The films slowly dissolve in aqueous electrolytes upon potential cycling, yet appear to be catalytic with regards to water oxidation.

  5. Development of vapor deposited thin films for bio-microsystems

    NASA Astrophysics Data System (ADS)

    Popat, Ketul Chandrakant

    Increasing demands for more biocompatible and sophisticated bio-microsystems in recent years has led to the development of a new technology called BioMEMS (biological micro-electro-mechanical systems). The foundation of this technology is the same as that of the traditional field of IC (integrated circuits), but an emphasis on developing new diagnostic and therapeutic modalities. Micro- and nano-fabrication techniques are currently being used to develop implants that can record, sense, stimulate and deliver to biological systems. Micromachined substrates can provide unique advantages over traditional implantable devices in terms of their ability to control surface micro-architecture, topography and feature size in micron and nano sizes. However, as BioMEMS technology is rapidly being developed, the practical use of these bio-microsystems is limited due to the inability to effectively interface with the biological system in non-immunogenic and stable manner. This is one of the most important considerations, and hence it is useful to focus on the fundamental scientific issues relating to material science, surface chemistry and immunology of silicon based bio-microsystems. This results in development of biomolecular interfaces that are compatible with both microfabrication processing and biological systems. The overall thrust of this research is to develop, characterize and integrate vapor deposited thin films with bio-microsystems in a manner that it is both reproducible and fully integrated with existing technologies. The main strategy is to use silane coatings precursor coatings on which poly (ethylene glycol) (PEG) will be coated in vapor phase. Silane has been coated user vapor phase, but its chemical and biological characterization and stability of the films under physiological conditions has not been investigated for biological applications. PEG has been coated in solution phase on silicon surface. However, it has not been coated under vapor phase. Here we are

  6. High rate chemical vapor deposition of carbon films using fluorinated gases

    DOEpatents

    Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

    1993-01-01

    A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

  7. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  8. Deposition of diamond-like carbon film using electron cyclotron resonance plasma

    NASA Astrophysics Data System (ADS)

    Kuo, S. C.; Kunhardt, E. E.; Srivatsa, A. R.

    1991-11-01

    Hard diamond-like carbon films were deposited on Si(100) substrates using a CH4 plasma created through electron cyclotron resonance (ECR) heating. The ECR plasma was excited by a Lisitano coil. These films could be deposited with a negative dc bias (-200 V) or a RF-induced negative self-bias (-100 V) on the substrates. The deposition rate of the film was about 2.3 A/s. The deposited films were characterized by Raman spectroscopy and near-edge X-ray absorption fine structure analysis.

  9. Deposition of diamond-like carbon film using electron cyclotron resonance plasma

    SciTech Connect

    Kuo, S.C.; Kunhardt, E.E. ); Srivatsa, A.R. )

    1991-11-11

    Hard diamond-like carbon films were deposited on Si(100) substrates using a CH{sub 4} plasma created through electron cyclotron resonance (ECR) heating. The ECR plasma was excited by a Lisitano coil. These films could be deposited with a negative dc bias ({minus}200 V) or a rf-induced negative self-bias ({minus}100 V) on the substrates. The deposition rate of the film was about 2.3 A/s. The deposited films were characterized by Raman spectroscopy and near-edge x-ray absorption fine structure analysis.

  10. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  11. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  12. Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells

    SciTech Connect

    Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

    1997-07-01

    The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

  13. Tribological characteristics of gold films deposited on metals by ion plating and vapor deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Spalvins, T.; Buckley, D. H.

    1984-01-01

    The graded interface between an ion-plated film and a substrate is discussed as well as the friction and wear properties of ion-plated gold. X-ray photoelectron spectroscopy (XPS) depth profiling and microhardness depth profiling were used to investigate the interface. The friction and wear properties of ion-plated and vapor-deposited gold films were studied both in an ultra high vacuum system to maximize adhesion and in oil to minimize adhesion. The results indicate that the solubility of gold on the substrate material controls the depth of the graded interface. Thermal diffusion and chemical diffusion mechanisms are thought to be involved in the formation of the gold-nickel interface. In iron-gold graded interfaces the gold was primarily dispersed in the iron and thus formed a physically bonded interface. The hardness of the gold film was influenced by its depth and was also related to the composition gradient between the gold and the substrate. The graded nickel-gold interface exhibited the highest hardness because of an alloy hardening effect. The effects of film thickness on adhesion and friction were established.

  14. Understanding the deposition mechanism of pulsed laser deposited B-C films using dual-targets

    SciTech Connect

    Zhang, Song; He, Zhiqiang; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng; Ji, Xiaoli; Lu, Wenzhong

    2014-04-21

    Boron carbide thin films with stoichiometry (boron-carbon atomic ratio) range of 0.1 ∼ 8.9 were fabricated via pulsed laser deposition by using boron-carbon dual-targets. However, this experimental data on stoichiometry were smaller than the computer simulation values. The discrepancy was investigated by studies on composition and microstructure of the thin films and targets by scanning electron microscopy, excitation laser Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the boron liquid droplets were formed by phase explosion after laser irradiation on boron sector. Part of the boron droplets would be lost via ejection in the direction of laser beam, which is tilted 45° to the surface of substrate.

  15. Inkjet Deposition of Layer by Layer Assembled Films

    PubMed Central

    Andres, Christine M.; Kotov, Nicholas A.

    2010-01-01

    Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film build-up without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer was also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multi-component, and non-contact patterning for the simple production of stratified patterns that are much needed in advanced devices. PMID:20863114

  16. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system. PMID:26632854

  17. Stress anisotropy and stress gradient in magnetron sputtered films with different deposition geometries

    SciTech Connect

    Zhao, Z.B.; Yalisove, S.M.; Bilello, J.C.

    2006-03-15

    Mo films were deposited via magnetron sputtering with two different deposition geometries: dynamic deposition (moving substrate) and static deposition (fixed substrate). The residual stress and structural morphologies of these films were investigated, with particular focus on in-plane anisotropy of the biaxial stress and stress gradient across the film thickness. The results revealed that the Mo films developed distinct states of residual stress, which depended on both deposition geometry and film thickness. With the dynamic geometry, the Mo films generally exhibited anisotropic stress. Both the degree of anisotropy and the magnitude of stress varied as functions of film thickness. The variation of stress was linked to the evolution of anisotropic microstructures in the films. The Mo films from the static geometry developed isotropic residual stress, which was more compressive and noticeably larger in magnitude than that of the Mo films from the dynamic geometry. Aside from these disparities, the two types of Mo films (i.e., anisotropic and isotropic) exhibited notably similar trends of stress variation with film thickness. Depth profiling indicated the presence of large stress gradients for the Mo films, irrespective of the deposition geometries. This observation seems to be consistent with the premise that Mo films develop a zone T structure, which is inherently inhomogeneous along the film thickness. Moreover, the largest stress gradient for both types of deposition geometries arises at roughly the same film depth ({approx}240 nm from substrate), where the stresses sharply transits from highly compressive to less compressive or even tensile. This appears to correspond to the boundary region that separates two distinct stages of microstructural evolution, a feature unique to zone T-type structure.

  18. Structural and nanomechanical characterization of niobium films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, X.; Cao, W. H.; Tao, X. F.; Ren, L. L.; Zhou, L. Q.; Xu, G. F.

    2016-05-01

    Nb thin films were deposited onto Si wafers by direct current (DC) magnetron sputtering at different deposition pressures. The microstructure and nanomechanical properties of Nb films were investigated by scanning electron microscope, X-ray diffractometer, transmission electron microscope, atomic force microscope and nanoindenter. The results revealed that the grain size, thickness, surface roughness, the reduced elastic modulus ( Er) and hardness ( H) values of Nb thin films increased at the pressure range of 0.61-0.68 Pa. Meanwhile, the porosity of Nb films decreased with the increase in deposition pressure. The lattice deformation of Nb thin films changed from negative to positive with the increase in deposition pressure. It is concluded that deposition pressure influences the microstructure and nanomechanical properties of Nb films.

  19. Acoustic monitoring of carbon film formation by laser-induced chemical vapor deposition

    SciTech Connect

    Iida, Y.; Yeung, E.S. )

    1993-04-01

    Acoustic signals generated by the deposition of carbon thin films were monitored in situ by a microphone. Photolysis of benzene or adamantane vapor in the presence of helium buffer gas of 5 to 100 Torr by an ArF excimer laser formed several kinds of carbon films (e.g., polymeric, amorphous, and graphitic films), depending on the optical configuration, the ambient pressure, the laser fluence, and the reagent pressure. Analysis of the acoustic signal offers some insight into the mechanism of the deposition processes, which include the graphitization of the deposited films and the role of energetic particles, such as vibrationally excited benzene, in the deposition of amorphous hydrogenated carbon film. Also, the acoustic signal clearly showed the presence of surface-related processes in the course of film deposition. 26 refs., 6 figs., 1 tab.

  20. Tunable hydrophilicity on a hydrophobic fluorocarbon polymer coating on silicon

    SciTech Connect

    Kolari, K.; Hokkanen, A.

    2006-07-15

    An efficient, economic, reliable, and repeatable patterning procedure of hydrophobic surfaces was developed. A fluorocarbon polymer derived from the C{sub 4}F{sub 8} gas in an inductively coupled plasma etcher was used as the hydrophobic coating. For a subsequent patterning of hydrophilic apertures on the polymer, a short O{sub 2} plasma exposure through a silicon shadow mask was utilized. The overall hydrophilicity of the patterned surface can be tuned by the duration of the O{sub 2} plasma exposure, and also by the density and the size of the hydrophilic apertures. The laborious photolithography and tricky lift-off procedures are avoided. Optimization of the whole patterning process is explained thoroughly and supported with experimental data. The hydrophilic adhesion of the patterned polymer was evaluated with aqueous droplets, which were studied on matrices of the hydrophilic apertures of different sizes. The deposition parameters of the fluorocarbon polymer, the size of the droplet required to enable rolling on the patterned surface, and the duration of the O{sub 2} plasma exposure were considered as the main parameters. To determine the achievable resolution of the patterning procedure, the subsurface etching beneath the shadow mask was evaluated. The results show that a resolution of less than 10 {mu}m can be achieved. The simple hydrophilic patterning procedure described here can be used for the production of on-plane microfluidics, where a controlled adhesion or decohesion of 8-50 {mu}l droplets on the surface with a variable hydrophilicity from one location to another can be achieved.

  1. Effect of oxidation dynamics on the film characteristics of Ce:YIG thin films deposited by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Nakata, Yoshiki; Okada, Tatsuo; Maeda, Mitsuo; Higuchi, Sadao; Ueda, Kiyotaka

    2006-02-01

    Thin films with different compositions of Ce-substituted yttrium iron garnet (Ce:YIG (Y 2CeFe 5O 12)), Ga-doped Ce:YIG (Ce:Ga:YIG (Y 2CeFe 4.25Ga 0.75O 12)), and Gd-doped Ce:YIG (Ce:Gd:YIG (Y 1.6CeGd 0.4Fe 5O 12)) were deposited on gadolinium gallium garnet (GGG (Gd 3Ga 5O 12)) substrates in O 2 or Ar background gas by pulsed-laser deposition (PLD) technique. Crystalline films were obtained at a lower O 2 gas pressure of 20 mTorr or at higher Ar gas pressures of more than 100 mTorr. In addition, the behavior of YO molecules was visualized by two-dimensional laser-induced fluorescence (2D-LIF), in order to investigate the oxidation dynamics in the ablation plume. The oxidation dynamics and the crystallinity had close correlation.

  2. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    PubMed Central

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  3. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    PubMed

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  4. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    PubMed

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  5. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  6. Ultrathin film deposition by liquid CO2 free meniscus coating-uniformity and morphology.

    PubMed

    Kim, Jaehoon; Novick, Brian J; Desimone, Joseph M; Carbonell, Ruben G

    2006-01-17

    Ultrathin organic films of sucrose octaacetate (SOA) were deposited on 12.5 cm diameter silicon wafer substrates using high-pressure free meniscus coating (hFMC) with liquid CO2 (l-CO2) as a coating solvent. The dry film thickness across the wafer and the morphology of deposited films were characterized as a function of coating conditions-withdrawal velocity, solution concentration, and evaporation driving force (deltaP). When no evaporation driving force was applied (deltaP = 0), highly uniform films were deposited with thickness in the range of 8-105 angstroms over the entire concentration range (3-11 wt%). Uniform films were also obtained at low concentrations (3-5 wt%) with a low evaporation driving force (deltaP = 0.0138 MPa). However, films deposited at medium to high concentrations (7-11 wt%) were thicker (110-570 angstroms) and less uniform, with larger nonuniformities at higher applied evaporation driving forces. Optical microscopy and atomic force microscopy (AFM) were used to characterize film morphology including drying defects and film roughness. Films deposited without evaporation had no apparent drying defects and very low root-mean-square (RMS) roughness (1.4-3.8 angstroms). Spinodal-like dewetting morphologies including holes with diameters in the range of 100-300 nm, and surface undulations were observed in films deposited at medium concentration (7 wt%) and low deltaP (0.0138-0.0276 MPa). At higher concentrations and higher evaporative driving forces, spinodal-like dewetting morphologies disappeared but concentric ring defect structures were observed with diameters in the range 20-125 microm. The film thickness and morphology of SOA films deposited from 1-CO2 hFMC were compared to those deposited from toluene and acetone under normal dip coating. Films deposited from l-CO2 hFMC were much thinner, more uniform, and exhibited much fewer drying defects and lower RMS roughness. PMID:16401113

  7. Soap-film coating: High-speed deposition of multilayer nanofilms

    PubMed Central

    Zhang, Renyun; Andersson, Henrik A.; Andersson, Mattias; Andres, Britta; Edlund, Håkan; Edström, Per; Edvardsson, Sverker; Forsberg, Sven; Hummelgård, Magnus; Johansson, Niklas; Karlsson, Kristoffer; Nilsson, Hans-Erik; Norgren, Magnus; Olsen, Martin; Uesaka, Tetsu; Öhlund, Thomas; Olin, Håkan

    2013-01-01

    The coating of thin films is applied in numerous fields and many methods are employed for the deposition of these films. Some coating techniques may deposit films at high speed; for example, ordinary printing paper is coated with micrometre-thick layers of clay at a speed of tens of meters per second. However, to coat nanometre thin films at high speed, vacuum techniques are typically required, which increases the complexity of the process. Here, we report a simple wet chemical method for the high-speed coating of films with thicknesses at the nanometre level. This soap-film coating technique is based on forcing a substrate through a soap film that contains nanomaterials. Molecules and nanomaterials can be deposited at a thickness ranging from less than a monolayer to several layers at speeds up to meters per second. We believe that the soap-film coating method is potentially important for industrial-scale nanotechnology. PMID:23503102

  8. Process for synthesizing a new series of fluorocarbon polymers

    NASA Technical Reports Server (NTRS)

    Toy, M. S.

    1970-01-01

    Two-step process for preparing fluorocarbon materials includes - /1/ adding gaseous fluorine to a polyperfluoropolyene to create fluorocarbon radicals, with reactive sites at unsaturated carbon atoms, and /2/ introducing a monomer, after evacuation of fluorine gas, and allowing copolymerization with the free radicals.

  9. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    NASA Astrophysics Data System (ADS)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  10. Uses of ion bombardment in thin-film deposition

    SciTech Connect

    Erck, R.A.; Fenske, G.R.; Erdemir, A.

    1990-10-01

    Use of plasma- and ion-beam-modified surfaces and surface coatings in continually expanding in engineering disciplines. The purpose of these modifications and treatments is to impart favorable properties, such as wear resistance and lubricity, to the surfaces, while at the same time retaining the strength or toughness of the bulk materials. Energetic-ion bombardment can be used to modify the structural and chemical properties of surfaces or applied coatings. Ion-implantation has been used for many years, and recently, other surface-modification techniques, among them ion-beam mixing and ion-beam-assisted deposition, have attracted attention because they permit application of highly adherent lubricious and wear-resistant films. In this paper, ion-beam techniques are described from the viewpoint of ion-surface interactions, and some avenues for the engineering of tribological surfaces are presented. 100 refs., 4 figs.

  11. Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films

    SciTech Connect

    Choi, Dooho; Wang, Bincheng; Chung, Suk; Liu Xuan; Darbal, Amith; Wise, Adam; Nuhfer, Noel T.; Barmak, Katayun; Warren, Andrew P.; Coffey, Kevin R.; Toney, Michael F.

    2011-09-15

    Sputter-deposited W films with nominal thicknesses between 5 and 180 nm were prepared by varying the base pressure prior to film deposition and by including or not including sputtered SiO{sub 2} encapsulation layers. X-ray and electron diffraction studies showed that single phase, polycrystalline {alpha}-W could be achieved in as-deposited films as thin as 5 nm. The stress state in the as-deposited films was found to be inhomogeneous. Annealing resulted in stress relaxation and reduction of resistivity for all films, except the thinnest, unencapsulated film, which agglomerated. In-plane film grain sizes measured for a subset of the annealed films with thicknesses between 5 and 180 nm surprisingly showed a near constant value (101-116 nm), independent of film thickness. Thick-film ({>=}120 nm) resistivity values as low as 8.6 {mu}{Omega} cm at 301 K were obtained after annealing at 850 deg. C for 2 h. Film resistivities were found to increase with decreasing film thicknesses below 120 nm, even for films which are fully A2 {alpha}-W with no metastable, A15 {beta}-W evident.

  12. Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

    SciTech Connect

    Mamun, M.A.; Gu, D.; Baumgart, H.; Elmustafa, A.A.

    2015-03-01

    The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALD Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.

  13. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    SciTech Connect

    Auciello, O. North Carolina State Univ., Raleigh, NC . Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. . Dept. of Materials Science and Engineering); Krauss, A.R. )

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  14. Order-Disorder Transition in Sputter-Deposited Silver-Zinc Alloy Films

    NASA Astrophysics Data System (ADS)

    Maeda, Yoshihito; Minemura, Tetsuroh; Andoh, Hisashi

    1991-06-01

    An order-disorder transition between β' and β phases was observed to take place reversibly at 510 K in sputter-deposited AgZn alloy films of 30 nm thickness. The β' phase was found to exist in the as-deposited alloy film and the transition could be described by the order parameter of Bragg-Williams theory.

  15. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  16. Characterization Of Fe{sub 1-x}Co{sub x}Si Thin Films Deposited Via Pulsed Laser Deposition

    SciTech Connect

    Manyala, N.; Ngom, Balla; Kana-Kana, J. B.; Bucher, Remy; Maaza, M.; Di Tusa, J. F.

    2008-09-23

    We report on the structural and morphological characterization of B20 cubic structure Fe{sub 1-x}Co{sub x}Si thin films grown by pulsed laser deposition for the concentration range 0{<=}x{<=}0.3 deposited on Si (111) substrate. The x-ray diffraction, Rutherford back scattering (RBS), Scanning Electron microscopy (SEM) and Atomic force microscopy (AFM) of the films show that all the films are single phase B20 cubic structure with concentrations close to expected values, very smooth and dense with surface roughness less than 0.8 nm.

  17. Low-temperature crystallization of TiO2 films by sputter deposition

    NASA Astrophysics Data System (ADS)

    Taga, Yasunori; Yamada, Naoomi

    2010-04-01

    Crystalline TiO2 film was formed on PET(polyethlene terephthalate) film by radio frequency sputter deposition method using a sintered TiO2 target by adding H2O gas to Ar gas for sputtering. X-ray diffraction analysis revealed that the crystal structure of the film of 100 nm thick was confirmed to be anatase crystallites of TiO2. In order to elucidate the mechanism of low temperature crystallization thus observed, direct measurement of surface temperature of growing films during sputter deposition was carried out by two methods of an infrared thermometer from the outside of vacuum chamber and a thermocouple attached to the growing film surface. Upon the beginning of sputter deposition in Ar gas, film temperature increased rapidly and became constant at 120°C after 30 min. Addition of H2O gas to Ar gas for sputtering resulted in further increase in film temperature and reached to 230 °C depending on the deposition conditions. Furthermore, photocatalytic performance of decomposition of methylene blue was examined to be enhanced remarkably as a result of crystallization of the film. It was concluded that low temperature crystallization of TiO2 film by sputter deposition was explained in terms of local heating of thin shallow surface region of growing film by kinetic energy deposition of sputtered particles.

  18. Hydrogenated amorphous silicon films produced by chemical vapor deposition: Final report

    SciTech Connect

    Not Available

    1987-04-01

    Hydrogenated amorphous silicon (a-Si:H) is a technologically important semiconductor, well-suited for solar photovoltaic energy conversion and thin film device applications. While the glow discharge technique is widely used for the deposition of a-Si:H films, this work is focused on the use of the chemical vapor deposition (CVD) technique, i.e., the thermal decomposition of disilane and higher silanes, for the deposition of a-Si:H films. A simple technique for the preparation of disilane and higher silanes by using an electric discharge in monosilane under atmospheric pressure has been developed, and the discharge product can be used directly for the deposition process. The important parameters of the CVD process including the substrate temperature, the composition and flow rate of the reaction mixture, and the nature of the diluent gas for disilane, have also been investigated. The deposition rate of a-Si:H films in a helium atmosphere is considerably higher than that in a hydrogen atmosphere, and the CVD process in a helium atmosphere is well-suited for the deposition of thick a-Si:H films. The a-Si:H films deposited under various conditions have been characterized by the photoconductivity, dissolution rate, optical absorption, mechanical stress, gap state density, minority carrier diffusion length, and stability measurements. On the basis of these measurements, a-Si:H films deposited by the thermal decomposition of disilane in a helium atmosphere exhibit better structural and electronic properties than those deposited in a hydrogen atmosphere.

  19. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    PubMed

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  20. Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

    NASA Astrophysics Data System (ADS)

    Lee, Hae-Jeong; Lin, Eric K.; Bauer, Barry J.; Wu, Wen-li; Hwang, Byung Keun; Gray, William D.

    2003-02-01

    Trimethylsilane-based carbon-doped silica films prepared with varying chemical-vapor-deposition process conditions were characterized using x-ray reflectivity and porosimetry to measure the film thickness, average film density, density depth profile, wall density, and porosity. Samples deposited under single or dual frequency conditions with either N2O or O2 as an oxidant were compared. The structural parameters were correlated with the chemical bond structure measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform with a slight densification at the film surface. The distribution of pores was also uniform through the film. Films prepared under a single frequency and/or N2O atmosphere had the lowest film density, wall density, and dielectric constant. The porosities of the films were similar and the pore sizes were less than 10 Å.

  1. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    SciTech Connect

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-11-13

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

  2. Spectroscopic ellipsometry investigations of optical anisotropy in obliquely deposited hafnia thin films

    NASA Astrophysics Data System (ADS)

    Tokas, R. B.; Jena, Shuvendu; Haque, S. Maidul; Rao, K. Divakar; Thakur, S.; Sahoo, N. K.

    2016-05-01

    In present work, HfO2 thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

  3. Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

    SciTech Connect

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. ); Tanaka, S.; Yamada, A.; Yamada, I. . Ion Beam Engineering Lab.)

    1990-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

  4. Deposition of thermoelectric strontium hexaboride thin films by a low pressure CVD method

    NASA Astrophysics Data System (ADS)

    Tynell, Tommi; Aizawa, Takashi; Ohkubo, Isao; Nakamura, Katsumitsu; Mori, Takao

    2016-09-01

    Thin films of SrB6 were deposited on sapphire substrates using a chemical vapor deposition method, with elemental strontium and decaborane, B10H14, used as the strontium and boron sources, respectively. The formation of highly crystalline, phase-pure SrB6 films was confirmed with X-ray diffraction and reflection high energy diffraction (RHEED) analysis, and the films' thermoelectric transport properties were measured. A relatively high deposition temperature of 850-950 °C was found to be optimal for obtaining well-crystallized films at an extremely high deposition rate. The thermoelectric transport properties of the SrB6 thin films were observed to be comparable to those reported for bulk materials, but an unexpectedly high electrical resistivity led to a reduced power factor value for the thin films.

  5. Computer modeling of Y-Ba-Cu-O thin film deposition and growth

    SciTech Connect

    Burmester, C.; Gronsky, R. ); Wille, L. . Dept. of Physics)

    1991-07-01

    The deposition and growth of epitaxial thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are modeled by means of Monte Carlo simulations of the deposition and diffusion of Y, Ba, and Cu oxide particles. This complements existing experimental characterization techniques to allow the study of kinetic phenomena expected to play a dominant role in the inherently non-equilibrium thin film deposition process. Surface morphologies and defect structures obtained in the simulated films are found to closely resemble those observed experimentally. A systematic study of the effects of deposition rate and substrate temperature during in-situ film fabrication reveals that the kinetics of film growth can readily dominate the structural formation of the thin film. 16 refs., 4 figs.

  6. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  7. Microstructure-related properties of magnesium fluoride films at 193nm by oblique-angle deposition.

    PubMed

    Guo, Chun; Kong, Mingdong; Lin, Dawei; Liu, Cunding; Li, Bincheng

    2013-01-14

    Magnesium fluoride (MgF2) films deposited by resistive heating evaporation with oblique-angle deposition have been investigated in details. The optical and micro-structural properties of single-layer MgF2 films were characterized by UV-VIS and FTIR spectrophotometers, scanning electron microscope (SEM), atomic force microscope (AFM), and x-ray diffraction (XRD), respectively. The dependences of the optical and micro-structural parameters of the thin films on the deposition angle were analyzed. It was found that the MgF2 film in a columnar microstructure was negatively inhomogeneous of refractive index and polycrystalline. As the deposition angle increased, the optical loss, extinction coefficient, root-mean-square (rms) roughness, dislocation density and columnar angle of the MgF2 films increased, while the refractive index, packing density and grain size decreased. Furthermore, IR absorption of the MgF2 films depended on the columnar structured growth. PMID:23388989

  8. Amorphous/microcrystalline transition of thick silicon film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Elarbi, N.; Jemaï, R.; Outzourhit, A.; Khirouni, K.

    2016-06-01

    Thick silicon films were deposited by plasma-enhanced chemical vapor deposition at different plasma power densities. Annealing treatment was performed on these deposited films. As-deposited and annealed films were characterized by X-ray diffraction, Raman scattering spectroscopy and reflectance spectroscopy. Before annealing, only the film deposited at the plasma power density of 500 mW/cm2 exhibits a diffraction peak corresponding to the (111) plane orientation. Raman spectrum of this film confirms the presence of crystalline phase. After annealing, a transition from amorphous phase to crystalline one occurs for all samples. This transition is accompanied by an increase of the crystalline fraction volume deduced from Raman spectra analysis and by a reduction of optical gap energy.

  9. Engineering properties of superhard films with ion energy and post-deposition processing

    SciTech Connect

    Monteiro, Othon R.; Delplancke-Ogletree, Mari-Paule

    2002-10-14

    Recent developments in plasma synthesis of hard materials using energetic ions are described. Metal Plasma Immersion Ion Implantation and Deposition (MePIIID) has been used to prepare several hard films: from diamondlike carbon (DLC) to carbides, from nitrides to oxides. The energy of the depositing species is controlled to maximize adhesion as well as to change the physical and chemical properties of the films. Adhesion is promoted by the creation of a graded interface between the film and the substrate. The energy of the depositing ions is also used to modify and control the intrinsic stresses and the microstructure of the films. The deposition is carried out at room temperature, which is important for temperature sensitive substrates. A correlation between intrinsic stresses and the energetics of the deposition is presented for the case of DLC films, and means to reduce stress levels are discussed.

  10. Influence of ion assistance on LaF3 films deposited by molybdenum boat evaporation.

    PubMed

    Liu, Ming-Chung; Lee, Cheng-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

    2012-05-20

    LaF3 thin films at 193 nm were deposited by the molybdenum boat evaporation with ion-assisted deposition (IAD). Various optical characteristics, stress, and microstructures that formed under different ion-beam voltages of IAD deposition were investigated. The relation between these properties is also discussed. LaF3 films deposited with IAD exhibited small rough surfaces and large optical loss at 193 nm. The largest value of optical loss for films at 193 nm, which were prepared at an ion-beam voltage of 400 V, was 1.55% and the extinction coefficient was smaller than 0.0015. Microstructures and crystalline structures of films were influenced and changed by the ion-assisted deposition process. Tensile stress value of films increased as the ion-beam voltage rose. Refractive index, related to the packing density and microstructures, also increased as the ion-beam voltage rose. PMID:22614587

  11. Preparation of cuxinygazsen precursor films and powders by electroless deposition

    DOEpatents

    Bhattacharya, Raghu N.; Batchelor, Wendi Kay; Wiesner, Holm; Ramanathan, Kannan; Noufi, Rommel

    1999-01-01

    A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

  12. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  13. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  14. Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

    SciTech Connect

    Nistor, L.C.; Ghica, C.; Teodorescu, V.S.; Nistor, S.V. . E-mail: snistor@alpha1.infim.ro; Dinescu, M.; Matei, D.; Frangis, N.; Vouroutzis, N.; Liutas, C.

    2004-11-02

    Hydroxyapatite (HA) thin films has been successfully deposited by Nd:YAG laser ablation at {lambda} = 532 nm. The morphology and microstructure of the deposited layers was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). Polycrystalline HA films were directly obtained with the substrate at 300 deg. C and without introducing water vapors in the deposition chamber. Electron paramagnetic resonance (EPR) measurements show that the oxygen stoichiometry in the HA films is also maintained. Depositions performed at {lambda} = 335 nm laser wavelength and 300 deg. C substrate temperature resulted in polycrystalline layers of mixed composition of HA and tricalciumphosphate (TCP)

  15. Characterization of CrBN films deposited by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Aouadi, S. M.; Namavar, F.; Tobin, E.; Finnegan, N.; Haasch, R. T.; Nilchiani, R.; Turner, J. A.; Rohde, S. L.

    2002-02-01

    This article reports on the growth and analysis of CrBN nanocrystalline materials using an ion beam assisted deposition process. In addition, this article addresses the utilization of spectroscopic ellipsometry for in situ analysis of ternary nitrides. Coatings, with a total thickness of 1.5±0.2 μm, were deposited at low temperatures (<200 °C) on silicon substrates using ion beam assisted deposition. These coatings were characterized postdeposition using x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), visible-light spectroscopic ellipsometry (VIS-SE), infrared spectroscopic ellipsometry (IR-SE), and nanoindentation. The primary phases in the films were investigated using XRD. The surface morphology and nanocrystalline nature of the coatings (grain size of 5-7 nm) were deduced using AFM. The elemental composition and phase composition of the samples were determined from XPS and AES measurements and were subsequently deduced from the analysis of the VIS-SE data, and these correlated well. XPS, AES, and IR-SE revealed the crystal structure of the BN phase in the ternary compounds. The correlation of the results from these various techniques indicates that in situ SE may be a potential technique to control the growth of ternary nitride coatings in the future. The mechanical properties of the coatings were evaluated using nanohardness testing. The hardness and elastic modulus were measured to be 19-22 GPa and 250-270 GPa, respectively.

  16. Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

    NASA Technical Reports Server (NTRS)

    Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

    1992-01-01

    The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

  17. Deposition and Characterization of Thin Films on Metallic Substrates

    NASA Technical Reports Server (NTRS)

    Gatica, Jorge E.

    2005-01-01

    A CVD method was successfully developed to produce conversion coatings on aluminum alloys surfaces with reproducible results with a variety of precursors. A well defined protocol to prepare the precursor solutions formulated in a previous research was extended to other additives. It was demonstrated that solutions prepared following such a protocol could be used to systematically generate protective coatings onto aluminum surfaces. Experiments with a variety of formulations revealed that a refined deposition protocol yields reproducible conversion coatings of controlled composition. A preliminary correlation between solution formulations and successful precursors was derived. Coatings were tested for adhesion properties enhancement for commercial paints. A standard testing method was followed and clear trends were identified. Only one precursors was tested systematically. Anticipated work on other precursors should allow a better characterization of the effect of intermetallics on the production of conversion/protective coatings on metals and ceramics. The significance of this work was the practical demonstration that chemical vapor deposition (CVD) techniques can be used to systematically generate protective/conversion coating on non-ferrous surfaces. In order to become an effective approach to replace chromate-based pre- treatment processes, namely in the aerospace or automobile industry, the process parameters must be defined more precisely. Moreover, the feasibility of scale-up designs necessitates a more comprehensive characterization of the fluid flow, transport phenomena, and chemical kinetics interacting in the process. Kinetic characterization showed a significantly different effect of magnesium-based precursors when compared to iron-based precursors. Future work will concentrate on refining the process through computer simulations and further experimental studies on the effect of other transition metals to induce deposition of conversion/protective films

  18. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  19. Chromium Carbide Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition

    NASA Astrophysics Data System (ADS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Terajima, Ryou; Emura, Masanari

    1999-06-01

    Chromium carbide thin films are synthesized on Si(100)substrates by a pulsed Nd:YAG laser deposition method at differentsubstrate temperatures. Glancing-angle X-ray diffraction shows that acrystalline chromium carbide film can be prepared at the substratetemperature of 700°C. Grain size of the films, examined witha field-emission secondary electron microscope, increases withincreasing substrate temperature.

  20. X-ray absorption study of pulsed laser deposited boron nitride films

    SciTech Connect

    Chaiken, A.; Terminello, L.J.; Wong, J.; Doll, G.L.; Sato, T.

    1994-02-02

    B and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion- assisted pulsed laser deposition. Comparison of the films` spectra to those of several single-phase BN powder standards shows that the films consist primarily of sp{sup 2} bonds. Other features in the films`s spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.

  1. Formation of polymer thin films and interface control by physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Usui, Hiroaki

    2009-08-01

    Some strategies of physical vapor deposition (PVD) of polymer thin films have been proposed. Direct vapor deposition can be applied for simple polymers like polyethylene and Teflon. Coevaporation of bifunctional monomers can be achieved to deposit polyimide, polyurea etc., while chain polymerization assisted by ultraviolet or electron irradiation can be used to form vinyl or acryl polymers from single evaporation source. Surface-initiated deposition polymerization, which combines the self-assembled monolayer and vapor deposition, is another unique method to grow polymer thin films that are chemically bound to the substrate surface. The last method is also effective in controlling the interface between polymer films and inorganic substrates. The solvent-free nature of PVD is convenient for the formation of nanometer-thick films and especially multilayers that are required for device fabrication. Application of vapor deposition polymerization for fabrication of organic light-emitting diode is also described.

  2. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  3. Reactive Ballistic Deposition of Porous TiO2 Films: Growth and Characterization

    SciTech Connect

    Flaherty, David W.; Dohnalek, Zdenek; Dohnalkova, Alice; Arey, Bruce W.; McCready, David E.; Ponnusany, Nachimuthu; Mullins, C. Buddie; Kay, Bruce D.

    2007-03-29

    Nanoporous, high-surface area films of TiO2 are synthesized by reactive ballistic deposition of titanium metal in an oxygen ambient. Auger electron spectroscopy (AES) is used to investigate the stoichiometric dependence of the films on growth conditions (surface temperature and partial pressure of oxygen). Scanning and transmission electron microscopy show that the films consist of arrays of separated filaments. The surface area and the distribution of binding site energies of the films are measured as functions of growth temperature, deposition angle, and annealing conditions using temperature programmed desorption (TPD) of N2. TiO2 films deposited at 50 K at 70º from substrate normal display the greatest specific surface area of ~100 m2/g. In addition, the films retain greater than 70% of their original surface area after annealing to 600 K. The combination of high surface area and thermal stability suggest that these films could serve as supports for applications in heterogeneous catalysis.

  4. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  5. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGESBeta

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  6. Optical and Electrical Properties of Pure and Y-Doped n-SnSe Films Deposited by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    He, H. Y.

    2015-09-01

    Pure and Y3+-doped SnSe films were fabricated by chemical bath deposition. The deposited films were characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometry, photoluminescence spectrophotometry, and electrical conduction measurement. Since the films were deposited from the precursor solution with Se/Sn < 1, the Se/Sn molar ratios in the films was also smaller than the stoichiometric ratio. The films had thicknesses of ~409-615 nm and average transmittances of ~73.45-84.10% in the wavelength range of 350-850 nm. The direct and indirect optical band gaps estimated from the optical spectra with two methods of calculating absorption coefficiency. These bandgap values increased as decreasing Y3+-doping content. The films also showed a strong emission centered at ~699 nm and a weak emission centered at ~510 nm. The films showed n-type conduction and electrical resistance of ~5.83-96.40 × 10-3 Ω cm that decreased with increasing Y content. The refractive index, extinction coefficient, optical conductivity, and dielectric constant of the films were calculated with the transmittance and reflectance spectra.

  7. TFA-MOD (Metal Organic Deposition Using Trifluoroacetates) Films with Thickness Greater Than 1 Micron by a Single Deposition

    NASA Astrophysics Data System (ADS)

    Araki, Takeshi; Hayashi, Mariko; Fuke, Hiroyuki

    The key to obtaining films with thickness greater than 1 micron by a single TFA-MOD deposition is a crack-preventing material. The ratio of fluorine atoms to total fluorine and hydrogen atoms (RF) of the chemical is important for forming excellent superconducting films. Although hydrogen atoms lead to carbon residue, which fatally deteriorates superconducting properties of the resulting film, hydrogen atoms form strong hydrogen bonds with trifluoroacetates and have an excellent crack-prevention effect. The RF range from 0.75 to 0.96 is effective for obtaining single-coated, thick, high-critical-current-density superconducting films.

  8. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  9. In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures

    SciTech Connect

    Wilson, James D.; McCandless, Brian E.; Birkmire, Robert W.; Shafarman, William N.

    2009-06-09

    The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of coevaporated Cu(InGa)Se2 thin films and on the performance of the resulting solar cell devices have been characterized. Films were deposited at substrate temperatures of 150°C, 300°C and 400°C. Films were also deposited at these temperatures and then annealed in-situ at 550°C for 10 minutes. In as -deposited films without annealing, additional XRD reflections that may be due to a polytypic modification of the chalcopyrite phase were observed. Films deposited at 150°C were Se-rich. Post-deposition annealing caused microstructural changes in all films and improved the resulting solar cells. Only films deposited at 400°C, however, yielded high-efficiency devices after post-deposition annealing that were equivalent to devices made from films grown at 550°C. Films originally deposited at 300°C yielded devices after post-deposition annealing with VOC close to that of devices made from films grown at 550°C, despite smaller grain size.

  10. Underpotential deposition-mediated layer-by-layer growth of thin films

    SciTech Connect

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  11. Centrifugal Deposition of Microgels for the Rapid Assembly of Nonfouling Thin Films

    PubMed Central

    South, Antoinette B.; Whitmire, Rachel E.; García, Andrés J.; Lyon, L. Andrew

    2010-01-01

    Thin films assembled from microgel building blocks have been constructed using a simple, high-throughput, and reproducible centrifugation (or “active”) deposition technique. When compared to a common passive adsorption method (e.g., dip coating), microgels that are actively deposited onto a surface have smaller footprints and are more closely packed. Under both active and passive deposition conditions, the microgel footprint areas decrease during deposition. However, under active deposition, the microgel footprint appears to decrease continually and to a greater degree over the course of the deposition, forming a tightly packed, homogeneous film. Taking advantage of the rapid and uniform assembly of these films, we demonstrate the use of active deposition toward the fabrication of polyelectrolyte multilayers containing anionic microgels and a cationic linear polymer. Microgel multilayers successfully demonstrated effective blocking of the underlying substrate toward macrophage adhesion, which is a highly sought-after property for modulating the inflammatory response to an implanted biomaterial. PMID:20356152

  12. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  13. Optical characterization of deposited ITO thin films on glass and PET substrates

    NASA Astrophysics Data System (ADS)

    Elmas, Saliha; Korkmaz, Şadan; Pat, Suat

    2013-07-01

    This work focuses on fabrication, characterization and understanding some physical properties of transparent and conductive ITO thin films. ITO thin films were deposited onto glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) technique. TVA is a different technology for thin film deposition. Thicknesses and refractive indices of the ITO thin films have been determined by spectroscopic ellipsometry (SE) technique using Cauchy model for fitting. SE is a novel, nondestructive and powerful technique to investigate the optical characteristics of materials. Especially thickness and optical constants are measuring this device. Transmittances, reflectance of ITO coated samples were measured by UV-vis spectrophotometer and interferometer, respectively. The optical method was used to determine the band gaps of ITO thin films. Surface morphologies of produced films were characterized by atomic force microscope (AFM) for surface topography and roughness of ITO thin films. Resistivity measurements show that produced films show semiconductor properties.

  14. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO xN y) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  15. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOEpatents

    Zuhr, Raymond A.; Haynes, Tony E.; Golanski, Andrzej

    1994-01-01

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

  16. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOEpatents

    Zuhr, Raymond A.; Haynes, Tony E.; Golanski, Andrzej

    1999-01-01

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

  17. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOEpatents

    Zuhr, R.A.; Haynes, T.E.; Golanski, A.

    1999-06-08

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repels the ionized particles. 3 figs.

  18. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    NASA Astrophysics Data System (ADS)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  19. Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition

    SciTech Connect

    Sivakumar, Kousik; Rossnagel, S. M.

    2010-07-15

    Aluminum-doped zinc oxide films were deposited by dc and rf magnetron sputtering from ZnO(98%)Al{sub 2}O{sub 3}(2%) target at room temperature on silicon and glass substrates under a variety of process conditions with the goal of attaining the highest transmittance and lowest resistivity for photovoltaic applications. The magnetron power and pressure were varied. For many dielectric deposition systems, added oxygen is necessary to achieve the appropriate stoichiometry. The effect of oxygen on film properties was then studied by varying the oxygen partial pressure from 1.5x10{sup -5} to 4.0x10{sup -5} T at a constant Ar pressure, with the result that any added oxygen was deleterious. Films deposited under power, pressure, and low-oxygen conditions were then characterized for electrical and optical properties. Following this, the dc and rf sputtered films were annealed at up to 400 deg. C seconds using rapid thermal annealing (RTA), and the influence of annealing on resistivity, transmittance, band gap, as well as grain growth and stress was studied. The effect of RTA was immediate and quite significant on dc films while the effect on rf films was not as profound. As-deposited rf films had a higher average transmittance (87%) and lower resistivity (5.5x10{sup -4} {Omega} cm) compared to as-deposited dc films (84.2% and 8.9x10{sup -4} {Omega} cm). On the other hand, after RTA at 400 deg. C for 60 s, dc films exhibited better average transmittance (92.3%) and resistivity (2.9x10{sup -4} {Omega} cm) than rf films (90.7% and 4.0x10{sup -4} {Omega} cm). The band gap of dc films increased from 3.55 to 3.80 eV while that of rf films increased from 3.76 to 3.85 eV. Finally, dc and rf films were textured in 0.1% HCl and compared to U-type Asahi glass for resistivity and transmittance.

  20. Influence of solution deposition rate on properties of V2O5 thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

    2016-07-01

    Vanadium oxide (V2O5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films' crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V2O5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  1. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    SciTech Connect

    Baumann, H.; Sah, R.E.

    2005-05-01

    We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.

  2. NH3 sensing characteristics of nano-WO3 thin films deposited on porous silicon.

    PubMed

    Sun, Fengyun; Hu, Ming; Sun, Peng; Zhang, Jie; Liu, Bo

    2010-11-01

    The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electrochemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed. PMID:21138022

  3. Mechanical properties of amorphous hard carbon films prepared by cathodic arc deposition

    SciTech Connect

    Anders, S.; Anders, A.; Brown, I.G.

    1995-04-01

    Cathodic arc deposition combined with macroparticle filtering of the plasma is an efficient and versatile method for the deposition of amorphous hard carbon films of high quality. The film properties can be tailored over a broad range by varying the energy of the carbon ions incident upon the substrate and upon the growing film by applying a pulsed bias technique. By varying the bias voltage during the deposition process specific properties of the interface, bulk film and top surface layer can be obtained. We report on nanoindentation and transmission electron microscopy studies as well as stress measurements of cathodic-arc amorphous hard carbon films deposited with varied bias voltage. The investigations were performed on multilayers consisting of alternating hard and soft amorphous carbon.

  4. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Siye; Yan, Guanchao; Zhu, Xiaodong; Zhou, Haiyang

    2009-04-01

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition.

  5. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    NASA Astrophysics Data System (ADS)

    Velusamy, P.; Babu, R. Ramesh; Ramamurthi, K.

    2016-05-01

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300˚C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  6. Studies on VOx thin films deposited over Si3N4 coated Si substrates

    NASA Astrophysics Data System (ADS)

    Raj, P. Deepak; Gupta, Sudha; Sridharan, M.

    2015-06-01

    Vanadium oxide (VOx) thin films were deposited on to the silicon nitride (Si3N4) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (Ts). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.

  7. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    SciTech Connect

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L.; Mayo, B.

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}

  8. Synthesis and tribological properties of diamond-like carbon films by electrochemical anode deposition

    NASA Astrophysics Data System (ADS)

    Li, Yang; Zhang, GuiFeng; Hou, XiaoDuo; Deng, DeWei

    2012-06-01

    Diamond-like carbon films (DLC) are deposited on Ti substrate by electrochemical anodic deposition at room temperature in pure methanol solution using a pulsed DC voltage at a range from 200 V to 2000 V. Raman spectroscopy analysis of the films reveals two broaden characteristic absorption peaks centred at ˜1350 cm-1 and 1580 cm-1, relating to D- and G-band of typical DLC films, respectively. A broad peak centred at 1325-1330 cm-1 is observed when an applied potential is 1200 V, which can confirm that the deposited films contained diamond structure phase. Tribological properties of the coated Ti substrates have been measured by means of a ball-on-plate wear test machine. A related growth mechanism of DLC films by the anodic deposition mode has also been discussed.

  9. On the deposition mechanisms and the formation of glassy Cu-Zr thin films

    NASA Astrophysics Data System (ADS)

    Almyras, G. A.; Matenoglou, G. M.; Komninou, Ph.; Kosmidis, C.; Patsalas, P.; Evangelakis, G. A.

    2010-04-01

    We report on molecular dynamics (MD) simulations and physical vapor deposition experimental results concerning the development of glassy and nanocrystalline Cu-Zr thin films. MD has revealed that when Cu and Zr are deposited sequentially, a thin film overlayer is formed that consists of nanocrystalline a-Zr and t-Zr2Cu, while if Cu and Zr are simultaneously deposited, amorphous CuZr thin film emerges, due to the formation of icosahedral-like clusters that impede nucleation. Thin films grown by pulsed laser deposition and magnetron sputtering techniques were analyzed by x-ray diffraction and high-resolution transmission electron microscopy and yielded unequivocal evidence that validates our MD predictions. These findings may indicate an alternative pathway for the growth of metallic nanocomposites or glassy films.

  10. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  11. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  12. Substrate dependent structural and magnetic properties of pulsed laser deposited Fe3O4 thin films.

    PubMed

    Goyal, Rajendra N; Kaur, Davinder; Pandey, Ashish K

    2010-12-01

    Nanocrystalline iron oxide thin films have been deposited on various substrates such as quartz, MgO(100), and Si(100) by pulsed laser deposition technique using excimer KrF laser (248 nm). The orientations, crystallite size and lattice parameters were studied using X-ray diffraction. The XRD results show that the films deposited on MgO and Si substrates are highly oriented and show only (400) and (311) reflections respectively. On the other hand, the orientation of the films deposited on quarts substrate changed from (311) to (400) with an increase in the substrate temperature from 400 degrees C to 600 degrees C, indicating thereby that the film growth direction is highly affected with nature of substrate and substrate temperature. The surface morphology of the deposited films was studied using Atomic Force Microscopy (AFM) and spherical ball like regular features of nanometer size grains were obtained. The magnetic properties were studied by Superconducting Quantum Interference Device (SQUID) magnetometer in the magnetic field +/- 6 Tesla. The magnetic field dependent magnetization (M-H) curves of all the Fe3O4 thin films measured at 5 K and 300 K show the ferrimagnetic nature. The electrochemical sensing of dopamine studied for these films shows that the film deposited on MgO substrate can be used as a sensing electrode. PMID:21121292

  13. Roughness of glancing angle deposited titanium thin films: an experimental and computational study.

    PubMed

    Backholm, Matilda; Foss, Morten; Nordlund, Kai

    2012-09-28

    The characterization of roughness at the nanoscale by the means of atomic force microscopy (AFM) was performed on high aspect ratio glancing angle deposited titanium thin films. With the use of scanning electron microscopy as well as x-ray photoelectron spectroscopy, it was shown that the AFM measurements gave rise to incorrect roughness values for the films consisting of the highest aspect ratio structures. By correcting for this experimental artefact, the difference between the saturated roughness value of a film grown with conventional physical vapour deposition and films grown with a glancing angle of deposition was shown to behave as a power law function of the deposition angle, with a saturated roughness exponent of κ = 7.1 ± 0.2. This power law scaling was confirmed by three-dimensional molecular dynamics simulations of glancing angle deposition, where the saturated roughness exponent was calculated to κ = 6.7 ± 0.4. PMID:22948111

  14. Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

    NASA Astrophysics Data System (ADS)

    Ichimura, Masaya; Kajima, Takahiro; Kawai, Shoichi; Mibu, Ko

    2016-03-01

    Iron-sulfide-oxide thin films, which are promising candidates for solar cell materials, were deposited by electrochemical deposition. As-deposited and annealed films were characterized by Mössbauer spectroscopy, X-ray diffraction (XRD), and Raman scattering at room temperature. The as-deposited film is amorphous, and the oxygen content is about 1/4 of the sulfur content (S/Fe ≈ 1.5, O/Fe ≈ 0.4). The Mössbauer spectrum for the as-deposited film is a doublet with a broad line profile having hyperfine parameters similar to those of FeS2 pyrite or marcasite. This indicates that Fe atoms are in the Fe2+ low-spin state, as in FeS2.

  15. Structural Properties of Gold Thin Films Deposited on Technologically Important Substrates by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Glaser, Caleb; Schell, Michael; Tzolov, Marian; Senevirathne, Indrajith; Syed, Moniruzzaman

    2013-03-01

    Gold (Au) thin films offer a wide range of applications and may be used for memory storage, energy harvesting, nanosensors, optics, and biosensing devices. Au thin films are currently being studied more closely since they are highly conductive and yet not easily oxidized. Therefore, it is necessary to understand the growth mechanisms of film on various substrates. The structural properties of gold thin films also play an important role on the film quality, which may affect its' optical properties and the sensing capability of the device. In this study, Gold (Au) thin films were deposited on glass (SiO2), silicon (100) and other substrates at room temperature (RT) in an argon (Ar) gas environment as a function of deposition time. The structural properties and surface morphology of the Au thin film has been studied using an Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectrometry (EDX), and X-Ray Diffraction (XRD) measurements. The deposition rate was found to be decreased monotonically as deposition time increased for the films on glass substrates. The effect of the annealing temperature on the structural properties of the Au film deposited on the aforementioned substrates will also be discussed in this study. Lock Haven University of Pennsylvania

  16. Chemical vapour deposition of amorphous Ru(P) thin films from Ru trialkylphosphite hydride complexes.

    PubMed

    McCarty, W Jeffrey; Yang, Xiaoping; DePue Anderson, Lauren J; Jones, Richard A

    2012-11-21

    The ruthenium phosphite hydride complexes H(2)Ru(P(OR)(3))(4) (R = Me (1), Et (2), (i)Pr (3)) were used as CVD precursors for the deposition of films of amorphous ruthenium-phosphorus alloys. The as-deposited films were X-ray amorphous and XPS analysis revealed that they were predominantly comprised of Ru and P in zero oxidation states. XPS analysis also showed the presence of small amounts of oxidized ruthenium and phosphorus. The composition of the films was found to depend on ligand chemistry as well as the deposition conditions. The use of H(2) as the carrier gas had the effect of increasing the relative concentrations of P and O for all films. Annealing films to 700 °C under vacuum produced films of polycrystalline hcp Ru while a flowing stream of H(2) resulted in polycrystalline hcp RuP. PMID:23018487

  17. SrCoO3-δ thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ahvenniemi, Esko; Matvejeff, Mikko; Karppinen, Maarit

    2014-11-01

    Novel atomic layer deposition (ALD) process to deposit high-quality SrCoO3-δ thin films is introduced. Linear film growth is demonstrated within the film-thickness range of 15-300 nm. Post-annealing at 600 °C (in O2 or N2 atmosphere) is required to crystallize the as-deposited amorphous films. The new ALD process produces SrCoO3-δ films with a precisely controlled cation stoichiometry (±2.5%) and an appreciably high growth rate (1.67 Å per supercycle), hence providing us with a prominent method of fabricating high-quality SrCoO3-δ thin films in a readily scalable manner e.g. for intermediate-temperature solid oxide fuel cell cathodes.

  18. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    NASA Astrophysics Data System (ADS)

    Ulutas, Cemal; Gumus, Cebrail

    2016-03-01

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (Eg) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  19. Structural and electrical properties of sol-gel-deposited WO3 films

    NASA Astrophysics Data System (ADS)

    Agnihotry, S. A.; Sharma, Nidhi; Deepa, M.; Kishore, Ram; Sood, K. N.; Sharma, Sudhir K.

    1999-10-01

    Amongst various sol-gel routes to deposit large area WO3 films for electrochromic applications, the one using peroxotungstic acid based precursor solution gives superior electrochromic films. Further improvements in the properties are possible by chemical modification of the precursor material and by controlling the post deposition thermal treatment. Both these parameters affect physical, structural, electrical and as a result electrochromic properties of the films significantly. A detailed study of these properties of the films deposited with precursor solution modified with various organic additives and different thermal parameters was undertaken. X-ray diffraction, electron microscopy and resistance measurements were used to characterize and compare the films. These properties of the films correlated to their electrochromic behavior are reported in this paper.

  20. Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

    SciTech Connect

    Ray, S.K.; Maiti, C.K.; Lahiri, S.K.; Chakrabarti, N.B.

    1992-05-01

    Silicon dioxide films have been deposited at low temperatures (200-250{degrees}C) by microwave plasma enhanced decomposition of tetraethylorthosilicate (TEOS). The effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and the physical properties of the films have been investigated. Structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x-ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses. Films deposited using TEOS and oxygen have confirmed a density comparable to standard silane-based low-pressure chemical vapor deposited and plasma enhanced chemical vapor deposited oxides, nearly perfect stoichiometry, extremely low sodium and carbon content, and the absence of many undesirable hydrogen related bonds. Various electrical properties, viz., resistivity, breakdown strength, fixed oxide charge density, interface state density, and trapping behavior have been evaluated by the characterization of metal-oxide-semiconductor capacitors fabricated using deposited oxides. Deposited films on thin native oxides grown by either in situ plasma oxidation or a low temperature thermal oxidation exhibited excellent electrical properties. 32 refs., 16 figs., 2 tabs.

  1. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    NASA Astrophysics Data System (ADS)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  2. Optimum reaction conditions for lead zirconate titanate thick film deposition by ultrasound-assisted hydrothermal method

    NASA Astrophysics Data System (ADS)

    Saigusa, Katsuhiro; Morita, Takeshi

    2016-07-01

    A hydrothermal method can be used to deposit lead zirconate titanate (PZT) films and has several advantages, such as a relatively low reaction temperature and high crystal quality. We developed an ultrasound-assisted hydrothermal method to promote the hydrothermal reactions, which is effective for thick-PZT-film deposition. The first ultrasound-assisted hydrothermal method we developed can synthesize a 7.5 µm PZT film on a titanium substrate. However, for a much thicker film, repeated depositions were required, and the optimum precursor solution for the first deposition was not suitable for repeated depositions. In this study, we attempted to find the optimum precursor solution for depositing a film of sufficient thickness by repeated depositions. As a result, we were able to synthesize a 23.6 µm PZT film on second deposition by changing the ratio of zirconium to titanium ions in the precursor solutions. In addition, a transverse effect transducer was fabricated under optimum conditions and its vibration properties were evaluated.

  3. Modification and Wettability Study ITO Glass Coated with ZnO Film by Electrochemical Deposition and Hydrothermal Deposition.

    PubMed

    Fang, Mei; Zou, Changwei; Gong, Manfeng

    2016-03-01

    ITO glass is a substrate often utilized to construct various IT devices and sensors, favored for its excellent characteristics such as rapid electron transfer kinetics, non-toxicity, chemical stability, and high electron transmission. In this paper, film with ZnO-modified nanostructures on ITO glass was fabricated by both electrochemical deposition and hydrothermal deposition, respectively. The ZnO film as-deposited was then modified by surface modification reagent (FOTMS) to obtain a hydrophobic surface. SEM, XRD, and ZYGO were used to characterize their properties. The contact angles were then measured to characterize and compare the wettability of non-modified ITO glass and ITO glass modified by zinc oxide films. PMID:27455756

  4. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schultz, J.A.; Schmidt, H.; Liu, Y.L.; Auciello, O.; Barr, T.; Chang, R.P.H.

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  5. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. ); Lin, Y.P. Northwestern Univ., Evanston, IL . Dept. of Materials Science); Schultz, J.A. ); Schmidt, H. ); Liu, Y.L. (Argonne National Lab., IL (United States

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  6. Effect of deposition temperature on the properties of ZnO-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Seung Jin; Cho, Shinho

    2014-05-01

    ZnO-doped In2O3 (ZIO) thin films were deposited on quartz substrates at various deposition temperatures by radio-frequency magnetron sputtering. All the ZIO thin films showed a significant dependence on the deposition temperature. A strong preferential growth orientation was observed for all samples except the one deposited at 25 °C. As the deposition temperature was increased, the crystalline orientation of the main (222) plane did not change, but the full width at half maximum got smaller and the intensity increased rapidly. The ZIO thin film deposited at 100 °C showed the highest figure of merit with an average particle size of 60 nm, a bandgap energy of 3.51 eV, an electrical resistivity of 2.63 × 10-3 Ωcm, and an electron concentration of 4.99 × 1020 cm-3. A blue-shift of optical bandgap enegy was observed with increasing deposition temperature. These results suggest that the optimum deposition temperature for growing high-quality ZIO films is 100 °C and that the structural, optical, and electrical properties of ZIO thin films can be modulated by controlling the deposition temperature.

  7. Nanoparticle film deposition using a simple and fast centrifuge sedimentation method

    NASA Astrophysics Data System (ADS)

    Markelonis, Andrew R.; Wang, Joanna S.; Ullrich, Bruno; Wai, Chien M.; Brown, Gail J.

    2015-04-01

    Colloidal nanoparticles (NPs) can be deposited uniformly on flat or rough and uneven substrate surfaces employing a standard centrifuge and common solvents. This method is suitable for depositing different types of nanoparticles on a variety of substrates including glass, silicon wafer, aluminum foil, copper sheet, polymer film, plastic, and paper, etc. The thickness of the films can be controlled by the amount of the colloidal nanoparticle solution used in the preparation. The method offers a fast and simple procedure compared to other currently known nanoparticle deposition techniques for studying the optical properties of nanoparticle films.

  8. Plasma-deposited amorphous hydrogenated carbon films and their tribological properties

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.

    1989-01-01

    Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogen, and vacuum.

  9. Plasma-deposited amorphous hydrogenated carbon films and their tribological properties

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Pouch, John J.; Alterovitz, Samuel A.

    1989-01-01

    Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H ) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogrn, and vacuum.

  10. Suppressed grain-boundary scattering in atomic layer deposited Nb:TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Niemelä, Janne-Petteri; Hirose, Yasushi; Shigematsu, Kei; Sano, Masahito; Hasegawa, Tetsuya; Karppinen, Maarit

    2015-11-01

    We have fabricated high-quality thin films of the transparent conducting anatase Nb:TiO2 on glass substrates through atomic layer deposition, and a subsequent reductive heat treatment of the as-deposited amorphous films. Hall-effect measurements and Drude-fitting of the Vis-NIR spectra indicate that for lightly doped films deposited at temperatures around 170 °C, grain boundary scattering becomes negligible and the mobility is predominately limited by phonon-electron scattering inherent to the anatase lattice and by impurities. Simultaneously, such lighter doping leads to reduced plasma absorption, thereby improving material's performance as a transparent conductor.

  11. Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

    NASA Technical Reports Server (NTRS)

    Hines, Jacqueline H. (Inventor)

    2015-01-01

    A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

  12. Biocompatibility of atomic layer-deposited alumina thin films.

    PubMed

    Finch, Dudley S; Oreskovic, Tammy; Ramadurai, Krishna; Herrmann, Cari F; George, Steven M; Mahajan, Roop L

    2008-10-01

    Presented in this paper is a study of the biocompatibility of an atomic layer-deposited (ALD) alumina (Al2O3) thin film and an ALD hydrophobic coating on standard glass cover slips. The pure ALD alumina coating exhibited a water contact angle of 55 degrees +/- 5 degrees attributed, in part, to a high concentration of -OH groups on the surface. In contrast, the hydrophobic coating (tridecafluoro-1,1,2,2-tetrahydro-octyl-methyl-bis(dimethylamino)silane) had a water contact angle of 108 degrees +/- 2 degrees. Observations using differential interference contrast microscopy on human coronary artery smooth muscle cells showed normal cell proliferation on both the ALD alumina and hydrophobic coatings when compared to cells grown on control substrates. These observations suggested good biocompatibility over a period of 7 days in vitro. Using a colorimetric assay technique to assess cell viability, the cellular response between the three substrates can be differentiated to show that the ALD alumina coating is more biocompatible and that the hydrophobic coating is less biocompatible when compared to the control. These results suggest that patterning a substrate with hydrophilic and hydrophobic groups can control cell growth. This patterning can further enhance the known advantages of ALD alumina, such as conformality and excellent dielectric properties for bio-micro electro mechanical systems (Bio-MEMS) in sensors, actuators, and microfluidics devices. PMID:18085647

  13. Thin film solar cells grown by organic vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Yang, Fan

    Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

  14. Polymer film deposition on agar using a dielectric barrier discharge jet and its bacterial growth inhibition

    NASA Astrophysics Data System (ADS)

    Tsai, T.-C.; Cho, J.; Mcintyre, K.; Jo, Y.-K.; Staack, D.

    2012-08-01

    Polymer film deposition on agar in ambient air was achieved using the helium dielectric barrier discharge jet (DBD jet) fed with polymer precursors, and the bacterial growth inhibition due to the deposited film was observed. The DBD jet with precursor addition was more efficient at sterilization than a helium-only DBD jet. On the areas where polymer films cover the agar the bacterial growth was significantly inhibited. The inhibition efficacy showed dependence on the film thickness. The DBD jet without precursor also created a modified agar layer, which may slow the growth of some bacterial strains.

  15. Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Qi-Liang; Lü, Xian-Yi; Li, Liu-An; Cheng, Shao-Heng; Li, Hong-Dong

    2010-04-01

    Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm-1.

  16. Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films

    SciTech Connect

    Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I.; Asokan, K.

    2013-06-03

    We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

  17. Investigation of thin films of organic-based magnets grown by physical vapor deposition

    SciTech Connect

    Kao, C. Y.; Lu, Y.; Li, B.; Yoo, J.-W.; Epstein, A. J.

    2014-10-06

    Thin films of organic-based magnet, V[TCNE]{sub x} (TCNE: tetracyanoethylene), were deposited by physical vapor deposition (PVD) based reactive evaporation. The growth conditions were studied in detail. A saturated composition of V[TCNE]{sub ∼1.9} was determined by optimizing the growth condition. Two sets of films with different V to TCNE ratios were characterized. Both films were magnetic ordered up to 400 K and held coercive field of 60 Oe at room temperature. With the presence of excess vanadium within the film, the increase of defects created by PVD results in significant change in electronic property.

  18. Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles

    SciTech Connect

    Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

    1997-07-01

    Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

  19. Morphology of Imidazolium-Based Ionic Liquids as Deposited by Vapor Deposition: Micro-/Nanodroplets and Thin Films.

    PubMed

    Costa, José C S; Mendes, Adélio; Santos, Luís M N B F

    2016-07-18

    The morphology of micro- and nanodroplets and thin films of ionic liquids (ILs) prepared through physical vapor deposition is presented. The morphology of droplets deposited on indium-tin-oxide-coated glass is presented for the extended 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([Cn C1 im][Ntf2 ]; n=1-8) series, and the results show the nanostructuration of ILs. The use of in-vacuum energetic particles enhances/increases the nanodroplets mobility/coalescence mechanisms and can be a pathway to the fabrication of thin IL films. PMID:27028765

  20. MgB 2 thin films by hybrid physical-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xi, X. X.; Pogrebnyakov, A. V.; Xu, S. Y.; Chen, K.; Cui, Y.; Maertz, E. C.; Zhuang, C. G.; Li, Qi; Lamborn, D. R.; Redwing, J. M.; Liu, Z. K.; Soukiassian, A.; Schlom, D. G.; Weng, X. J.; Dickey, E. C.; Chen, Y. B.; Tian, W.; Pan, X. Q.; Cybart, S. A.; Dynes, R. C.

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk Tc due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2. The carbon-alloyed HPCVD films demonstrate record-high Hc2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions.

  1. Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

    SciTech Connect

    Kurapov, Denis; Reiss, Jennifer; Trinh, David H.; Hultman, Lars; Schneider, Jochen M.

    2007-07-15

    Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.

  2. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    SciTech Connect

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  3. Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates

    SciTech Connect

    Clancey, Joel W.; Cavanagh, Andrew S.; Kukreja, Ratandeep S.; Kongkanand, Anusorn; George, Steven M.

    2015-01-15

    Platinum (Pt) atomic layer deposition (ALD) usually yields Pt nanoparticles during initial film growth. In contrast, deposition of continuous and ultrathin Pt films is needed for many important applications, such as the oxygen reduction reaction in polymer electrolyte membrane (PEM) fuel cells. A continuous and high radius of curvature Pt film is more stable and has a higher area-specific activity than the Pt nanoparticles commonly used in PEM fuel cells. However, the Pt film must be ultrathin and have a large surface area to be cost effective. In this paper, a review of earlier Pt ALD studies on flat substrates is presented that demonstrates that tungsten, with a higher surface energy than platinum, can serve as an adhesion layer to achieve Pt ALD films that are continuous at ultrathin thicknesses of ∼1.5 nm. This work utilized MeCpPtMe{sub 3} and H{sub 2} plasma as the Pt ALD reactants. The deposition of continuous and ultrathin Pt ALD films using MeCpPtMe{sub 3} and H{sub 2} plasma as the reactants is then studied on two high surface area substrate materials: TiO{sub 2} nanoparticles and 3M nanostructured thin film (NSTF). Transmission electron microscopy (TEM) showed uniform and continuous Pt films with thicknesses of ∼4 nm on the TiO{sub 2} nanoparticles. TEM with electron energy loss spectroscopy analysis revealed W ALD and Pt ALD films with thicknesses of ∼3 nm that were continuous and conformal on the high aspect ratio NSTF substrates. These results demonstrate that cost effective use of Pt ALD on high surface area substrates is possible for PEM fuel cells.

  4. Rapid processing method for solution deposited YBa 2Cu 3O 7- δ thin films

    NASA Astrophysics Data System (ADS)

    Dawley, J. T.; Clem, P. G.; Boyle, T. J.; Ottley, L. M.; Overmyer, D. L.; Siegal, M. P.

    2004-02-01

    YBa 2Cu 3O 7- δ (YBCO) films, deposited on buffered metal substrates, are the primary candidate for second-generation superconducting (SC) wires, with applications including expanded power grid transmission capability, compact motors, and enhanced sensitivity magnetic resonance imaging. Feasibility of manufacturing such superconducting wires is dependent on high processing speed, often a limitation of vapor and solution-based YBCO deposition processes. In this work, YBCO films were fabricated via a new diethanolamine-modified trifluoroacetic film solution deposition method. Modifying the copper chemistry of the YBCO precursor solution with diethanolamine enables a hundredfold decrease in the organic pyrolysis time required for MA/cm 2 current density ( Jc) YBCO films, from multiple hours to ∼20 s in atmospheric pressure air. High quality, ∼0.2 μm thick YBCO films with Jc (77 K) values ⩾2 MA/cm 2 at 77 K are routinely crystallized from these rapidly pyrolyzed films deposited on LaAlO 3. This process has also enabled Jc (77 K)=1.1 MA/cm 2 YBCO films via 90 m/h dip-coating on Oak Ridge National Laboratory RABiTS™ textured metal tape substrates. This new YBCO solution deposition method suggests a route toward inexpensive and commercializable ∼$10/kA m solution deposited YBCO coated conductor wires.

  5. Biaxially aligned template films fabricated by inclined-substrate deposition for YBCO-coated conductor applications.

    SciTech Connect

    Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Erck, R. A.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

    2002-08-12

    Inclined substrate deposition (ISD) has the potential for rapid production of high-quality biaxially textured buffer layers, which are important for YBCO-coated conductor applications. We have grown biaxially textured MgO films by ISD at deposition rates of 20-100 {angstrom}/sec. Columnar grains with a roof-tile surface structure were observed in the ISD-MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD-MgO films are tilted at an angle from the substrate normal. A small {phi}-scan full-width at half maximum (FWHM) of {approx}9{sup o} was observed on MgO films deposited at an inclination angle of 55{sup o}. In-plane texture in the ISD MgO films developed in the first 0.5 {micro}m from the interface, then stabilized with further increases in film thickness. YBCO films deposited by pulsed laser deposition on ISD-MgO buffered Hastelloy C276 substrates were biaxially aligned with the c-axis parallel to the substrate normal. T{sub c} of 91 K with a sharp transition and transport J{sub c} of 5.5 x 10{sup 5} A/cm{sup 2} at 77 K in self-field were measured on a YBCO film that was 0.46-{micro}m thick, 4-mm wide, 10-mm long.

  6. Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors

    NASA Astrophysics Data System (ADS)

    Lee, Jeong-gun; Min, Suk-ki; Choh, Sung

    1994-12-01

    Ruthenium dioxide (RuO2) films are studied for use as a bottom electrode of the (Ba, Sr)TiO3 thin-film capacitor. RuO2 films have been deposited by reactive DC magnetron sputtering of ruthenium at a relatively low sputtering power. Stoichiometric RuO2 films are obtained at oxygen partial pressures as low as 0.6 mTorr. The properties of the films have been investigated using techniques such as Rutherford backscattering spectrometry, Auger electron spectrometry, X-ray diffraction, and scanning electron microscopy. The oxygen composition in as-deposited RuOx films increases from 2.0 to 2.4 with the increase of initial O2 partial pressure from 1.2 to 5.6 mTorr at a sputtering power of 200 W. The films deposited under low oxygen partial pressures followed by annealing show preferential crystal growth in the [110] direction, whereas those deposited in high oxygen partial pressures show growth in the [101] direction. A resistivity of 65 µΩ·cm is obtained after annealing at 800°C. Even after high-temperature deposition and subsequent annealing processes, clear interfaces between (Ba, Sr)TiO3 and RuO2 films are obtained.

  7. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    SciTech Connect

    Sharma, S. K.; Mohan, S.; Bysakh, S.; Kumar, A.; Kamat, S. V.

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  8. PROCESS FOR DECONTAMINATING LIQUID FLUOROCARBONS OF OIL SUSPENDED THEREIN

    DOEpatents

    Schneider, H.; Massey, B.J.

    1958-12-01

    Decontaminatlon of a bulk of liquld fluorocarbon contaminated with oil and water can be accomplished by passlng the contaminated material through a bed of either silica gel, activated alumina or activated carbon to absorb the contaminants.

  9. Inclined-substrate deposition of biaxially aligned template films for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Koritala, R. E.; Balachandran, U.

    2002-10-01

    Inclined-substrate deposition (ISD) of magnesium oxide (MgO) produces biaxially textured template films at high deposition rates. This process is promising for the fabrication of the second-generation superconducting wires. Biaxially aligned MgO films (≈1.5 μm thick) were deposited on polished Hastelloy C276 (HC) substrates by ISD at deposition rates of 20-100 Å/s. Buffer films were subsequently deposited on these template films, and YBCO films were deposited epitaxially on the substrates by pulsed laser deposition. X-ray pole figure analysis and φ- and ω-scans were used for texture characterization. Good in- and out-of-plane textures were observed, with MgO(0 0 2) φ-scan full-width at half maximum (FWHM) of 9.2° and ω-scan FWHM of 5.4°, respectively. Tc of 90 K with a sharp transition, and Jc≈2×10 5 A/cm 2, were obtained on a 0.5 μm thick, 0.5 cm wide, and 1 cm long YBa 2Cu 3O 7- δ (YBCO) film at 77 K in self-field.

  10. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    SciTech Connect

    Walmsley, B.A.; Liu, Y.; Hu, X.Z.; Bush, M.B.; Winchester, K.J.; Martyniuk, M.; Dell, J.M.; Faraone, L.

    2005-08-15

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  11. Low temperature temporal and spatial atomic layer deposition of TiO{sub 2} films

    SciTech Connect

    Aghaee, Morteza Maydannik, Philipp S.; Johansson, Petri; Kuusipalo, Jurkka; Creatore, Mariadriana; Homola, Tomáš; Cameron, David C.

    2015-07-15

    Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80–120 °C) were used to grow moisture barrier TiO{sub 2} films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO{sub 2} films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO{sub 2}, but the deposition time could be reduced using SALD. The TiO{sub 2} films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 × 10{sup −4} g day{sup −1} m{sup −2} (38 °C and 90% RH) was measured for 20 nm of TiO{sub 2} film deposited by plasma-assisted ALD.

  12. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Walmsley, B. A.; Liu, Y.; Hu, X. Z.; Bush, M. B.; Winchester, K. J.; Martyniuk, M.; Dell, J. M.; Faraone, L.

    2005-08-01

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  13. Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Choong-Ki; Ahn, Hyun Jun; Moon, Jung Min; Lee, Sukwon; Moon, Dong-II; Park, Jeong Soo; Cho, Byung-Jin; Choi, Yang-Kyu; Lee, Seok-Hee

    2015-12-01

    The effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 °C to 500 °C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction.

  14. Decontamination by cleaning with fluorocarbon surfactant solutions

    SciTech Connect

    Kaiser, R.; Benson, C.E.; Meyers, E.S.; Vaughen, V.C.A.

    1994-02-01

    In the nuclear industry, facilities and their components inevitably become contaminated with radioactive materials. This report documents the application of a novel particle-removal process developed by Entropic Systems, Inc. (ESI), to decontaminate critical instruments and parts that are contaminated with small radioactive particles that adhere to equipment surfaces. The tests were performed as a cooperative effort between ESI and the Chemical Technology Division of the Oak Ridge National Laboratory (ORNL). ESI developed a new, environmentally compatible process to remove small particles from solid surfaces that is more effective than spraying or sonicating with CFC-113. This process uses inert perfluorinated liquids as working media; the liquids have zero ozone-depleting potential, are nontoxic and nonflammnable, and are generally recognized as nonhazardous materials. In the ESI process, parts to be cleaned are first sprayed or sonicated with a dilute solution of a high-molecular-weight fluorocarbon surfactant in an inert perfluorinated liquid to effect particle removal. The parts are then rinsed with the perfluorinated liquid to remove the fluorocarbon surfactant applied in the first step, and the residual rinse liquid is then evaporated from the parts into an air or nitrogen stream from which it is recovered. Nuclear contamination is inherently a surface phenomenon. The presence of radioactive particles is responsible for all ``smearable`` contamination and, if the radioactive particles are small enough, for some of the fixed contamination. Because radioactivity does not influence the physical chemistry of particle adhesion, the ESI process should be just as effective in removing radioactive particles as it is in removing nonradioactive particles.

  15. Structural and gasochromic properties of WO3 films prepared by reactive sputtering deposition

    NASA Astrophysics Data System (ADS)

    Yamamoto, S.; Hakoda, T.; Miyashita, A.; Yoshikawa, M.

    2015-02-01

    The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO3) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO3 films were prepared on SiO2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N2 gas. It was found that (001)-oriented monoclinic WO3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO3 films revealed that (001)-oriented WO3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.

  16. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    PubMed Central

    Schneider, Andreas M; Eiden, Stefanie

    2015-01-01

    Summary In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity. PMID:25977851

  17. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition.

    PubMed

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity. PMID:25977851

  18. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    NASA Astrophysics Data System (ADS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  19. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  20. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  1. Fluorocarbon compounds in MRI diagnostics and medical therapy

    NASA Astrophysics Data System (ADS)

    Pirogov, Yu

    2016-02-01

    The lecture describes the application of fluorocarbon compounds as blood substitutes and contrasting preparations in MRI diagnostics. A blood substitute product fluorocarbon Perfluorane® has shown effectiveness in oxygen delivery to the tissues of living organisms, and cardioprotective effect which does not depend on the patient's blood group. Inclusion of paramagnetic atoms (gadolinium, iron, etc.) to the Perfluorane® chemical formula creates a new compound with high MRI contrast efficiencies at Larmor frequencies of protons so and fluorine-19 nuclei.

  2. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOEpatents

    Taylor, G.W.; Roybal, H.E.

    1983-11-14

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al/sub 2/O/sub 3/ yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  3. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOEpatents

    Taylor, Gene W.; Roybal, Herman E.

    1985-01-01

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al.sub.2 O.sub.3 yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  4. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  5. Optical properties of titania films prepared by ion-assisted deposition

    NASA Astrophysics Data System (ADS)

    Krishna, M. G.; Narasimharao, K.; Mohan, Sangeneni

    1992-07-01

    Thin films of titanium dioxide have been deposited using ion-assisted deposition with oxygen ions produced using: (1) a Heitmann ion source (HIS) for ions with energy less than 100 eV and (2) a broad beam Kaufman ion source (KIS) for ions in the energy range 100 to 500 eV and current densities up to 100 (mu) A/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient only nominally up to 300 eV. The maximum refractive index obtained was 2.49 at an energy of 300 eV and 50 (mu) A/cm2 current density. The refractive index of the films deposited using the HIS was lower than those deposited using the KIS. The refractive index of the HIS films increased with increasing substrate temperature with very little change in the extinction coefficient.

  6. Complex surfaces plated by thin-film deposition in one operation

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.; Przybyszewski, J. S.; Spalvins, T.

    1967-01-01

    Ion plating deposits thin film on complex surface in one operation. The ionized materials follow electric lines of force to all points on the objects, uniformly plating the surface from all sides simultaneously.

  7. Critical detonation thickness in vapor-deposited hexanitroazobenzene (HNAB) films with different preparation conditions

    NASA Astrophysics Data System (ADS)

    Tappan, Alexander; Knepper, Robert; Marquez, Michael; Ball, J.; Miller, Jill

    2013-06-01

    At Sandia National Laboratories, we have coined the term ``microenergetics'' to describe sub-millimeter energetic material studies aimed at gaining knowledge of combustion and detonation behavior at the mesoscale. Films of the high explosive hexanitroazobenzene (HNAB) have been deposited through physical vapor deposition. HNAB deposits in an amorphous state that crystallizes over time and modest heating accelerates this crystallization. HNAB films were prepared under different crystallization temperatures, and characterized with surface profilometry and scanning electron microscopy. The critical detonation thickness for HNAB at different crystallization conditions was determined in a configuration where charge width was large compared to film thickness, and thus side losses did not play a role in detonation propagation. The results of these experiments will be discussed in the context of small sample geometry, deposited film morphology, crystal structure, and density.

  8. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    NASA Astrophysics Data System (ADS)

    Stöber, L.; Konrath, J. P.; Krivec, S.; Patocka, F.; Schwarz, S.; Bittner, A.; Schneider, M.; Schmid, U.

    2015-07-01

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

  9. Dynamics of pulsed reactive RF discharges in response to thin film deposition

    NASA Astrophysics Data System (ADS)

    Sikimić, B.; Stefanović, I.; Denysenko, I. B.; Winter, J.; Sadeghi, N.

    2014-04-01

    A power-modulated radio-frequency (f = 13.56 MHz) argon plasma supplied by reactive acetylene to deposit an amorphous hydrocarbon film on the electrodes is studied. The effects of gradual film deposition on electron density, electron temperature, argon metastable Arm(3P2) density, and dc-bias voltage are investigated. The time evolutions of plasma parameters during a pulsing cycle are studied as a function of the applied RF power and the thickness of the deposited film. Analytical estimations show a slower expansion of the sheath size and a slower decay of the ion flux after film deposition on the electrodes. The observed changes in the plasma parameters during the power-on and afterglow phases of the pulsed plasma can be correlated with the presence of impurities desorbed from the chamber walls in the discharge volume.

  10. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  11. Laser reactive ablation deposition of titanium nitride and titanium carbide films

    NASA Astrophysics Data System (ADS)

    D'Anna, Emilia; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Perrone, Alessio; Majni, Guiseppe; Mengucci, Paolo; Mihailescu, Ion N.

    1994-11-01

    Titanium nitride and titanium carbide films were deposited on silicon substrates by XeCl excimer laser reactive ablation of titanium in nitrogen and methane atmospheres, respectively. A series of 10,000 pulses at the fluence of approximately 5 J/cm2 and repetition rate of 10 Hz were directed to the target. The pressure in the chamber was fixed, during every irradiation series, at a given value within the range 6 X 10-4 - 10 mbar of N2 or CH4. Very flat films with thickness exceeding 1 micrometers were deposited. The structural characteristics of the deposited films were investigated by Rutherford backscattering spectrometry, scanning electron microscopy, and by x-ray diffraction. Under specific experimental conditions very pure nitride films were deposited.

  12. Novel fabrication of an electrochromic antimony-doped tin oxide film using a nanoparticle deposition system

    NASA Astrophysics Data System (ADS)

    Kim, Hyungsub; Park, Yunchan; Choi, Dahyun; Ahn, Sung-Hoon; Lee, Caroline Sunyong

    2016-07-01

    Novel deposition method of Antimony-doped tin oxide (ATO) thin films was introduced using a nanoparticle deposition system (NPDS) to fabricate an electrochromic (EC) device. NPDS is a dry deposition method that simplifies the ATO deposition process by eliminating the need for solvents or binders. In this study, an ATO EC layer was deposited using NPDS. The surface morphology and electrochemical and optical transmittance properties were characterized. The optical transmittance change in the ATO EC device was ∼35% over the wavelength range of 350-800 nm, and the cyclic transmittance was stable. The ATO film deposited using NPDS, exhibited a coloration efficiency of 15.5 cm2 C-1. Therefore, our results suggest that ATO EC devices can be fabricated using a simple, cost-effective NPDS, which allows nanoparticles to be deposited directly without pre- or post-processing.

  13. Formation of Si02 film on plastic substrate by liquid-phase-deposition method

    NASA Astrophysics Data System (ADS)

    Kitaoka, Masaki; Honda, Hisao; Yoshida, Harunobu; Takigawa, Akio; Kawahara, Hideo

    1991-11-01

    The silicon dioxide (SiO2) film deposition on a plastic was made by liquid phase deposition (LPD) method. This process involves the deposition and growth of SiO2 layer on the plastic while immersing it in the hexafluorosilicic acid (H2SiF6) solution supersaturated with silica. In this study, it was shown that the specific pretreatment of the plastic surface by silane coupling agent was required for better adhesion of the SiO2 film. And the SiO2 film properties, resistance of organic solvent, water vapor permeability and water absorptivity, were evaluated in order to apply the 'LPD-SiO2' film to the protective layer of the polycarbonate (PC) disk for optical memory. As a result, it was shown that the 'LPD-SiO2' film could improve the properties of the plastic substrate.

  14. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, Jerome J.; Halpern, Bret L.

    1994-01-01

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  15. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tripathi, T. S.; Yadav, C. S.; Karppinen, M.

    2016-04-01

    We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  16. Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

    SciTech Connect

    Wang Yunfei; Chen Xuekang; Li Zhonghua; Zheng Kuohai; Wang Lanxi; Feng Zhanzu; Yang Shengsheng

    2009-01-05

    High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

  17. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  18. The Effects of Sputtering Target Preparation and Deposition Temperature on ZnTe:Cu Film Properties

    SciTech Connect

    Faulkner, Brooke R.; Ohno, T. R.; Burst, James M.; Duenow, Joel N.; Perkins, Craig L.; To, Bobby; Gessert, Timothy A.

    2015-06-14

    A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target 'recipes' with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.

  19. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  20. Preparation and optical properties of sol-gel-deposited electrochromic iron oxide films

    NASA Astrophysics Data System (ADS)

    Ozer, Nilgun; Tepehan, Fatma; Tepehan, Galip

    1997-10-01

    The preparation and optical properties of sol-gel deposited iron oxide films are investigated in this study. The films are deposited on glass by spin-coating from polymeric sol-gel solutions. The coating solutions were prepared from Fe(OCH3H7)3 and isopropanol. Fe2O3 films were obtained at a firing temperature 180 degrees Celsius. The films were characterized by x-ray diffractometry (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), cyclic voltammetry (CV) and UV-Vis spectroscopy. The electrochemical properties of the films were studied in 0.5 M LiClO4/propylene carbonate (PC) solution. The CV results showed reversibility of the Li+/e- insertion/extraction process in the Fe2O3 films up to 200 cycles. Reduction and oxidation of the amorphous films in 0.5 M LiClO4-PC solution caused noticeable changes in optical absorption. XRD of the films showed that they had an amorphous structure. Fourier transform infrared spectroscopy (FTIR) measurements showed that the composition of the film is Fe2O3. In-situ spectrophotometric measurements indicated that these films show weak electrochromism in the spectral range of 350 - 800 nm. The optical band gap is estimated to be 1.92 eV for the amorphous film. The spectroelectrochemical properties clearly indicated that cyclic stability of the iron oxide films deteriorated above 200 cycles.

  1. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  2. A simple chemical method for deposition of electrochromic Prussian blue thin films

    SciTech Connect

    Demiri, Sani; Najdoski, Metodija; Velevska, Julijana

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Prussian blue thin films were prepared by a simple chemical deposition method. Black-Right-Pointing-Pointer The films can be easily prepared from aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. Black-Right-Pointing-Pointer The films show good electrochromic properties. Black-Right-Pointing-Pointer They change from deep blue color into green, and then back to blue and colorless. Black-Right-Pointing-Pointer The PB thin films exhibit stability and excellent reversibility. -- Abstract: This paper is about a recently developed new chemical method for deposition of Prussian blue thin films. The films are easily prepared by successive immersion of the substrates into an acidic aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. It is calculated of the results from AFM analysis that the growth in the film thickness by one immersion cycle corresponds to an average increase of 6 nm. The characterization of the films with X-ray diffraction, SEM-EDS analysis and FTIR spectroscopy shows that the deposited material is amorphous hydrated Fe{sub 4}[Fe(CN){sub 6}]{sub 3}. The electrochromic properties are characterized by cyclic voltammetry and VIS spectrophotometry. The PB thin films exhibit stability and excellent reversibility, which make these films favorable for electrochromic devices.

  3. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K.; Babu, R. Ramesh; Sethuraman, K.

    2016-05-01

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO3 in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V2O5 and V4O7. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10-3 lin.-2m-4 and 1.7263 × 1014 lin.m-2. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  4. Fabrication and kinetics study of nano-Al/NiO thermite film by electrophoretic deposition.

    PubMed

    Zhang, Daixiong; Li, Xueming

    2015-05-21

    Nano-Al/NiO thermites were successfully prepared as film by electrophoretic deposition (EPD). For the key issue of this EPD, a mixture solvent of ethanol-acetylacetone (1:1 in volume) containing 0.00025 M nitric acid was proved to be a suitable dispersion system for EPD. The kinetics of electrophoretic deposition for both nano-Al and nano-NiO were investigated; the linear relation between deposition weight and deposition time in short time and parabolic relation in prolonged time were observed in both EPDs. The critical transition time between linear deposition kinetics and parabolic deposition kinetics for nano-Al and nano-NiO were 20 and 10 min, respectively. The theoretical calculation of the kinetics of electrophoretic deposition revealed that the equivalence ratio of nano-Al/NiO thermites film would be affected by the behavior of electrophoretic deposition for nano-Al and nano-NiO. The equivalence ratio remained steady when the linear deposition kinetics dominated for both nano-Al and nano-NiO. The equivalence ratio would change with deposition time when deposition kinetics for nano-NiO changed into parabolic kinetics dominated after 10 min. Therefore, the rule was suggested to be suitable for other EPD of bicomposites. We also studied thermodynamic properties of electrophoretic nano-Al/NiO thermites film as well as combustion performance. PMID:25950271

  5. Thermodynamic properties of gaseous fluorocarbons and isentropic equilibrium expansions of two binary mixtures of fluorocarbons and argon

    NASA Technical Reports Server (NTRS)

    Talcott, N. A., Jr.

    1977-01-01

    Equations and computer code are given for the thermodynamic properties of gaseous fluorocarbons in chemical equilibrium. In addition, isentropic equilibrium expansions of two binary mixtures of fluorocarbons and argon are included. The computer code calculates the equilibrium thermodynamic properties and, in some cases, the transport properties for the following fluorocarbons: CCl2F, CCl2F2, CBrF3, CF4, CHCl2F, CHF3, CCL2F-CCl2F, CCLF2-CClF2, CF3-CF3, and C4F8. Equilibrium thermodynamic properties are tabulated for six of the fluorocarbons(CCl3F, CCL2F2, CBrF3, CF4, CF3-CF3, and C4F8) and pressure-enthalpy diagrams are presented for CBrF3.

  6. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    NASA Astrophysics Data System (ADS)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  7. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    SciTech Connect

    Hoffman, D.M.; Atagi, L.M. |; Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang; Rubiano, R.R.; Springer, R.W.; Smith, D.C.

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  8. Deposition and characterization of far-infrared absorbing gold black films

    NASA Technical Reports Server (NTRS)

    Advena, Donna J.; Bly, Vincent T.; Cox, J. T.

    1993-01-01

    A process is described for producing gold black films with high absorptance in the far IR. The optical and electrical properties of these films have been studied with particular emphasis on the absorptance of films at wavelengths as long as 50 microns. A substantial decrease in absorptance near 50 microns has been observed for pure gold black films on aging in air. This degradation can be largely avoided by alloying the gold with a small percentage of copper during the deposition. Preliminary results on two methods for delineating gold black films are also presented.

  9. Annealing effect on Cu2S thin films prepared by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    More, Pawan; Dhanayat, Swapnali; Gattu, Ketan; Mahajan, Sandeep; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    In present work Cu2S thin film fabricated on glass substrate by simple, cost effective chemical bath deposition method subsequently it annealed at 150°c.These films were studied for their structural, optical and electrical properties using X-ray diffraction, UV-vis spectrophotometer and I-V system. The results show successful synthesis of Cu2S thin films and improvement in crystalline nature of the thin film which resulted in reduced bad gap and resistance of the film. Thus these thinfilms prove to be a promising candidate for solar cell application.

  10. Formation of needlelike crystallites during growth of diamond films by chemical vapor deposition

    SciTech Connect

    Kopylov, P. G.; Obraztsov, A. N. Shvets, P. V.

    2010-07-15

    Diamond polycrystalline films have been grown by chemical vapor deposition from a hydrogenmethane mixture. The phase composition and structure of the films were studied using Raman spectroscopy, electron microscopy, and thermogravimetry. It is found that, upon heating in air, the oxidation of the carbon material forming the films occurs at significantly different temperatures, depending on the degree of its order and the crystallite size. This difference is used for selective oxidation of the least ordered fine-grained component of the films. The material obtained by this selective oxidation of the films consists of diamond crystallites shaped like regular micrometer-sized tetragonal pyramids with a radius of tip curvature of several nanometers.

  11. Third order nonlinearity in pulsed laser deposited LiNbO3 thin films

    NASA Astrophysics Data System (ADS)

    Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal; Raju, K. C. James

    2016-05-01

    Lithium niobate (LiNbO3) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

  12. Characteristics of CoxTi1-xO2 thin films deposited by MOCVD

    SciTech Connect

    McClure, A.; Kayani, A.; Idzerda, Y.U.; Arenholz, E.; Cruz, E.

    2008-05-09

    This paper deals with the growth and characterization of ferromagnetic cobalt doped TiO{sub 2} thin films deposited by liquid precursor metal organic chemical vapor deposition (MOCVD) using a new combination of the source materials Co(TMHD){sub 3}, tetrahydrofuran (THF), and titanium isopropoxide (TIP). An array of experiments reveals the intrinsic ferromagnetic nature of the grown films, and suggests that the magnetism is not generated by oxygen vacancies.

  13. Composition and submicron structure of chemically deposited Cu2Se-In2Se3 films

    NASA Astrophysics Data System (ADS)

    Markov, V. F.; Tulenin, S. S.; Maskaeva, L. N.; Kuznetsov, M. V.; Barbin, N. M.

    2012-03-01

    Films of substitutional solid solutions of the Cu2Se-In2Se3 system containing up to 7.5 at. % In have been obtained by chemical deposition from aqueous media. The composition, structure, and morphology of the films have been studied. Data of X-ray diffraction and X-ray photoelectron spectroscopy showed that copper in the solid solution occurs in a single-valence state (Cu+). The deposited layers possess a globular morphology and are nanostructured.

  14. Structural properties of indium tin oxide thin films by glancing angle deposition method.

    PubMed

    Oh, Gyujin; Kim, Seon Pil; Lee, Kyoung Su; Kim, Eun Kyu

    2013-10-01

    We have studied the structural and optical properties of indium tin oxide (ITO) films deposited on sapphire substrates by electron beam evaporator with glancing angle deposition method. The ITO films were grown with different deposition angles of 0 degrees, 30 degrees, 45 degrees, 60 degrees at fixed deposition rate of 3 angstroms/s and with deposition rates of 2 angstroms/s, 3 angstroms/s, and 4angstroms/s at deposition angle of 45 degrees, respectively. From analysis of ellipsometry measurements, it appears that the void fraction of the films increased and their refractive indices decreased from 2.18 to 1.38 at the wavelength of 500 as increasing the deposition angle. The refractive index in the wavelength ranges of 550 nm-800 nm also depends on the deposition rates. Transmittance of ITO film with 235-nm-thickness grown at 60 degrees was covered about 20-80%, and then it was increased in visible wavelength range with increase of deposition angle. PMID:24245214

  15. Deposition of a-C/B films from o-carborane and trimethyl boron precursors

    SciTech Connect

    Geddes, J.B.; Getty, W.D.

    1996-12-31

    Vacuum wall deposition of a-B/C films has had tremendous positive impact on the performance of tokamak fusion reactors. In this work, precursor vapor and helium carrier gas have been used to create a plasma using a novel plasma source. Either trimethyl boron (TMB) or sublimed vapor from o-carborane solid can be used as deposition precursors. The plasma operates in a pressure range of 5 to 15 mTorr and typical flow rates are 5 sccm He plus 0.5-1 sccm o-carborane or TMB vapor. The film deposition rate ranges from less than 100 {angstrom}/minute to over 1,000 {angstrom}/minute. Microwave power levels range from 300--400 W at 2.45 GHz. The temperature and bias of the substrate can be varied, and the temperature of the substrate is recorded during deposition. The films have been analyzed using XPS. The atomic composition of the films has been measured. The o-carborane films have a much higher boron concentration than those deposited from TMB. The chemical bond characteristics of the different species have also been examined for each type of film. The thickness of the films is measured by profilometry, and this is combined with measurements of the film area and weight to calculate the film density. X-ray diffraction analysis has been performed; no evidence of any crystalline structure was found. Films with a thickness of a few thousand {angstrom} are routinely obtained. Deposition rates were 350 {angstrom}/minute on average.

  16. Method for continuous control of composition and doping of pulsed laser deposited films

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1995-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  17. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control

    DOEpatents

    Lowndes, Douglas H.; McCamy, James W.

    1996-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  18. In situ mechanical spectroscopy of laser deposited films using plasma plume excited reed

    SciTech Connect

    Scharf, Thorsten; Krebs, Hans-Ulrich

    2006-09-15

    We show a new approach to in situ measure the mechanical properties of pulsed laser deposited thin films by plasma plume excited reed with high accuracy. A vibrating reed, consisting of a Si substrate, is mounted into a pulsed laser deposition chamber. After deposition of the polymer film for investigation, the Si substrate is excited by the energy of the expanding laser plasma coming from a Ag target. The oscillations of the reed and their damping are measured using a diode laser reflected at the back side of the substrate, by observing the reflections with a position sensitive detector. Data collection as well as the coordination with the deposition setup are done computer controlled. Temperature dependent measurements of the damping of the reed oscillations then allow us to perform mechanical spectroscopy investigations of laser deposited polymer films.

  19. Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

    PubMed

    Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

    2015-11-01

    Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition. PMID:26726672

  20. Assessment of effects on vegetation of degradation products from alternative fluorocarbons

    NASA Technical Reports Server (NTRS)

    Mccune, D. C.; Weinstein, L. H.

    1990-01-01

    Concern with the effects of fluorides on plants has been devoted to that resulting from dry deposition (mainly with reference to gaseous HF and secondarily with particulate forms). The occurrence of precipitation as rain or mist and the presence of dew or free water on the foliage has mainly been considered with respect to their effects on the accumulation of air-borne fluoride and not with fluoride in wet deposition. That is, precipitation has been viewed primarily with respect to its facilitation of the solution and subsequent absorption of deposits by the foliar tissues or its elution of deposited fluoride from foliage. Accordingly, our evaluation of inorganic fluoride from fluorocarbon degradation rests upon a comparison with what is known about the effects of industrial emissions and what could be considered the natural condition.

  1. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    SciTech Connect

    Roy Moulik, Samik; Samanta, Sudeshna; Ghosh, Barnali

    2014-06-09

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ∼27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC ∼ 50% at room temperature at lowest wavelength (λ = 360 nm) at a nominal bias voltage of 0.1 V.

  2. Polycrystalline SrFe12O19 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Garcia, Tupac; de Posada, E.; Jimenez, Ernesto; Sanchez Ll., J. L.; Diaz Castanon, S.; Bartolo-Perez, Pascual; Cauich, W.; Oliva, I.; Pena, J. L.; Ceh, O.

    1999-07-01

    Polycrystalline SrFe12O19 thin films were deposited on Si (100) substrates by PLD using a Nd-YAG laser ((lambda) equals 1064 nm). During the deposition process substrates were kept at room temperature. As-deposited films were annealed in air at temperatures between 600 degree(s)C and 840 degree(s)C. Samples were characterized by AES, ESCA, SEM, AFM, x-ray diffraction and VSM. It is presented the relevance of the preparation of the target surface on the film quality. Some differences in the chemical composition of as-deposited films, compared with the target and the annealed films, were observed. The x-ray diffraction spectra show a textured as- deposited films. Samples annealed at 600 degree(s)C, and below, showed a very weak magnetic response. In contrast annealing in the temperature range 700 degree(s)C - 840 degree(s)C led to the formation of a nanocrystalline particle system (average particle size 150 - 350 nm) which behave as a single domain in the thermally demagnetized state. The obtained coercivities (5750 - 6850 Oe) are among the highest values reported for films, powders and sintered samples.

  3. [Optical Properties of ZnO Films Fabricated by Atomic Layer Deposition].

    PubMed

    Zhang, Chun-mei; Wang, Dong-dong; Fang, Ming; Zhang, Ao; Wang, Xiao-yu; Chen, Qiang; Meng, Tao

    2016-01-01

    The ZnO films were deposited by atomic layer deposition method using water and diethylzinc as precursors at different temperatures (110 and 190 degrees C). X-ray photoelectron spectroscopy, spectroscopic ellipsometry and photoluminescence spectra (PL) were used to investigate the elemental composition and optical properties of ZnO films. Our results showed that with the increasing of the growth temperature, the amount of -OH groups in the ZnO film decreased, which indicated that the reactions went to completion at high processing temperatures. The PL spectra of the ZnO film deposited at 110 degrees C exhibited two emission bands, one in the UV region and the other in the visible region. When the deposition temperature increased to 190 degrees C, the emission bands in the visible region disappeared, which indicated that the deep level defect in ZnO became less. The carrier mobility improved from 25 to 32 cm2 x (V x S)(-1) with the reduction of the defects in the ZnO film. The refractive index of the ZnO films decreased from 2.33 to 1.9 in the 375-800 nm region. The optical absorption edge (E(g)) values of the ZnO films deposited at different temperature were about 3.27 eV. PMID:27228734

  4. Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lai, Wen Chi; Wu, Yu-Shiang; Chang, Hou-Cheng; Lee, Yuan-Haun

    2010-12-01

    This study investigates the orientation of textured diamond films produced through microwave plasma chemical vapor deposition (MPCVD) at 1200 W, 110 Torr, CH 4/H 2 = 1/20, with depositions times of 0.5-4.0 h. After a growth period of 2.0-4.0 h, this particular morphology revealed a rectangular structure stacked regularly on the diamond film. The orientation on {1 1 1}-textured diamond films grew a preferred orientation of {1 1 0} on the surface, as measured by XRD. The formation of the diamond epitaxial film formed textured octahedrons in ball shaped (or cauliflower-like) diamonds in the early stages (0.5 h), and the surface of the diamond film extended to pile the rectangular structure at 4.0 h. The width of the tier was approximately 200 nm at the 3.0 h point of deposition, according to TEM images. The results revealed that the textured diamond films showed two different morphological structures (typical ball shaped and rectangular diamonds), at different stages of the deposition period. The I- V characteristics of the oriented diamond films after 4.0 h of deposition time showed good conformity with the ohmic contact.

  5. Synthesis and characterization of boron antimonide films by pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Das, S.; Bhunia, R.; Hussain, S.; Bhar, R.; Chakraborty, B. R.; Pal, A. K.

    2015-10-01

    Boron antimonide films (BSb) were successfully deposited by pulsed laser deposition technique on glass, fused silica and silicon substrates by using a target prepared by admixing boron and antimony powders in appropriate proportions. Nd-YAG laser was used to ablate the target. Films deposited at substrate temperatures of 673 K and above showed zinc blende structure. Grain growth in the films was observed in films deposited at higher temperatures. Films deposited on Si(1 0 0) substrates at higher deposition temperatures indicated lower residual strain. SIMS studies indicated very uniform distribution of B and Sb in the whole bulk of the films. XPS spectra indicated characteristic peaks at ∼34.87 eV for Sb4d, ∼188.1 eV for B1s, ∼765.5 eV for Sb3p3/2, ∼539 eV for Sb3d3/2 and ∼812.8 eV for Sb3p1/2. Raman peaks for BSb were located at ∼64 cm-1, 152 cm-1, 595 cm-1 and 821 cm-1.

  6. Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmas

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1990-01-01

    Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.

  7. Robust Mechanical Properties of Electrically Insulative Alumina Films by Supersonic Aerosol Deposition

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Gun; Cha, You-Hong; Kim, Do-Yeon; Lee, Jong-Hyuk; Lee, Tae-Kyu; Kim, Woo-Young; Park, Jieun; Lee, Dongyun; James, Scott C.; Al-Deyab, Salem S.; Yoon, Sam S.

    2015-08-01

    Electrically insulating alumina films were fabricated on steel substrates using supersonic aerosol deposition and their hardness and scratchability were measured. Alumina particles (0.4-μm diameter) were supersonically sprayed inside a low-pressure chamber using between 1 and 20 nozzle passes. These alumina particles were annealed between 300 and 800 K to determine the temperature's effect on film crystal size (37-41 nm). Smoother surface morphology and increased electrical resistance of the thin films were observed as their thicknesses grew by increasing the number of passes. Resistances of up to 10,000 MΩ demonstrate robust electrical insulation. Significant hardness was measured (1232 hv or 13.33 GPa), but the alumina films could be peeled off with normal loads of 36 and 47 N for films deposited on stainless steel and SKD11 substrates, respectively. High insulation and hardness confirm that these alumina films would make excellent electrical insulators.

  8. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen; Zhao, Xiaojing; Liu, Feng

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  9. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1989-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  10. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  11. Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-10-01

    We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step technique by reduced-pressure chemical vapor deposition, where the first step promotes two-dimensional growth at a lower substrate temperature. We observed a decrease in defect density with increasing film thickness. Ge films with thickness of 3.5 μm exhibited threading dislocation densities of 5 × 106 cm-2, which yielded devices with dark current density of 5 mA cm-2 (1 V reverse bias). We also noted the presence of stacking faults in the form of lines in the films and establish that this is an important defect for Ge films grown by this deposition technique.

  12. Investigation on single walled carbon nanotube thin films deposited by Langmuir Blodgett method

    SciTech Connect

    Vishalli, Dharamvir, Keya; Kaur, Ramneek; Raina, K. K.

    2015-05-15

    Langmuir Blodgett is a technique to deposit a homogeneous film with a fine control over thickness and molecular organization. Thin films of functionalized SWCNTs have been prepared by Langmuir Blodgett method. The good surface spreading properties of SWCNTs at air/water interface are indicated by surface pressure-area isotherm and the monolayer formed on water surface is transferred onto the quartz substrate by vertical dipping. A multilayer film is thus obtained in a layer by layer manner. The film is characterized by Atomic Force Microscope (AFM), UV-Vis-NIR spectroscopy and FTIR.AFM shows the surface morphology of the deposited film. UV-Vis-NIR spectroscopy shows the characteristic peaks of semiconducting SWCNTs. The uniformity of LB film can be used further in understanding the optical and electrical behavior of these materials.

  13. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    DOE PAGESBeta

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bondsmore » between the films and the substrates.« less

  14. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    SciTech Connect

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bonds between the films and the substrates.

  15. Evaluation of Interfacial Strength of Bnt Films Hydrothermally Deposited on Titanium Substrates

    NASA Astrophysics Data System (ADS)

    Kusukawa, Kazuhiro; Xu, Fangchao

    Lead-free piezoelectric (Bi1/2Na1/2)TiO3 (abbreviated as BNT) films were deposited on 0.2 mm thick pure titanium(Ti) substrates by a hydrothermal method. Scratch tests and Vickers indentation tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Some of Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition with a view of investigating the effects of substrate surface pretreatments on the adhesion of BNT films. In the scratch test, the critical force was determined from the variations of the tangential force and the acoustic emission (AE) signals with the normal force. The scratch test results revealed that the chemical polish pretreatment effectively improved the adhesion of BNT films. In addition, the critical substrate strain inducing the adhesion failure of BNT films has been investigated by the Vickers indentation test combined with finite element analysis (FEM).

  16. Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films

    SciTech Connect

    Ramprasad, Sudhir; Su, Yu-Wei; Chang, Chih-Hung; Paul, Brian; Palo, Daniel R.

    2013-06-13

    Solution deposition offers an attractive, low temperature option in the cost effective production of thin film solar cells. Continuous microreactor-assisted solution deposition (MASD) was used to produce nanocrystalline cadmium sulfide (CdS) films on fluorine doped tin oxide (FTO) coated glass substrates with excellent uniformity. We report a novel liquid coating technique using a ceramic rod to efficiently and uniformly apply reactive solution to large substrates (152 mm × 152 mm). This technique represents an inexpensive approach to utilize the MASD on the substrate for uniform growth of CdS films. Nano-crystalline CdS films have been produced from liquid phase at ~90°C, with average thicknesses of 70 nm to 230 nm and with a 5 to 12% thickness variation. The CdS films produced were characterized by UV-Vis spectroscopy, transmission electron microscopy, and X-Ray diffraction to demonstrate their suitability to thin-film solar technology.

  17. Electrochromism in sol-gel deposited TiO(sub 2) films

    SciTech Connect

    Bell, J.M.; Barczynska, J.; Evans, L.A.; MacDonald, K.A.; Wang, J.; Green, D.C.; Smith, G.B.

    1994-12-31

    Electrochromism in sol-gel deposited TiO{sub 2} films and films containing TiO{sub 2} and WO{sub 3} has been observed. The films are deposited by dip-coating from a precursor containing titanium isopropoxide in ethanol or titanium propoxide in ethanol, and after deposition the films are heat treated to between 250 C and 300 C. The films do not show any signs of crystallinity. However substantial coloration is observed using Li{sup +} ions in a non-aqueous electrolyte, both in pure TiO{sub 2} films and in mixed metal oxide films (WO{sub 3}:TiO{sub 2}), although the voltage required to produce coloration is different in the two cases. Results will be presented detailing the optical switching and charge transport properties of the films during cyclic voltammetry. These results will be used to compare the performance of the TiO{sub 2} films with other electrochromics. The TiO{sub 2} and mixed metal films all color cathodically, and the colored state is a neutral greyish color for TiO{sub 2}, while the bleached state is transparent and colorless. Results on coloration efficiency and the stability under repeated electrochemical cycling will also be presented. The neutral color of the TiO{sub 2} films and mixed-metal films means that electrochromic windows based on TiO{sub 2} may have significant advantages over WO{sub 3}-based windows. A detailed analysis of the optical properties of the colored state of the films will be presented. The dynamics of coloration for these films is also under investigation, and preliminary results will be presented.

  18. Electrochromism in sol-gel deposited TiO2 films

    NASA Astrophysics Data System (ADS)

    Bell, John M.; Barczynska, Joanna; Evans, L. A.; MacDonald, Kathleen A.; Wang, J.; Green, David C.; Smith, Geoffrey B.

    1994-09-01

    Electrochromism is sol-gel deposited TiO2 films and films containing TiO2 and WO3 has been observed. The films are deposited by dip-coating from a precursor containing titanium isopropoxide in ethanol or titanium propoxide in ethanol, and after deposition the films are heat treated to between 250 degree(s)C and 300 degree(s)C. The films do not show any signs of crystallinity. However substantial coloration is observed using Li+ ions in a non-aqueous electrolyte, both in pure TiO2 films and in mixed metal oxide films (WO3:TiO2), although the voltage required to produce coloration is different in the two cases. Results will be presented detailing the optical switching and charge transport properties of the films during cyclic voltammetry. These results will be used to compare the performance of the TiO2 films with other electrochromics. The TiO2 and mixed metal films all color cathodically, and the colored state is a neutral greyish color for TiO2, while the bleached state is transparent and colorless, Results on coloration efficiency and the stability under repeated electrochemical cycling will also be presented. The neutral color of the TiO2 films and mixed-metal films means that electrochromic windows based on TiO2 may have significant advantages over WO3-based windows. A detailed analysis of the optical properties of the colored state of the films will be presented. The dynamics of coloration for these films is also under investigation, and preliminary results will be presented.

  19. Wettability of oxide thin films prepared by pulsed laser deposition: New insights

    NASA Astrophysics Data System (ADS)

    Prakash, Saurav

    The objective of the thesis is to investigate the wettability of good quality oxide thin films prepared by pulsed laser deposition (PLD). In this work, many shortfalls in the water contact angle measurement of thin films of oxides, responsible for the wide scatter in the values reported in literature, have been addressed. (Abstract shortened by UMI.).

  20. Effect of Post Deposition Annealing Treatments on Properties of AZO Thin Films for Schottky Diode Applications.

    PubMed

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    High-quality aluminum (Al) doped ZnO (AZO) thin films were deposited on silicon substrates by RF sputtering at room temperature. The deposited films were annealed from the temperatures 350 °C to 650 °C in pure nitrogen (N₂) ambient. The effects of annealing on the microstructural, optical and electrical properties of the AZO films were investigated. A detailed analysis by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe and Hall measurements was performed to study the properties of these AZO thin films. It was observed that all of the as-deposited and annealed AZO films have homogenous surfaces and hexagonal wurtzite structures with good crystalline quality. The study also suggested that there was an intermediate post annealing temperature (450 °C) at which the deposited ZnO film exhibit best surface characteristics. Pd/AZO Schottky devices were fabricated with 450 °C annealed AZO thin films and the parameters of Schottky devices were extracted from I-V characteristics. These results indicated that the Pd/AZO films were very much suitable for various optoelectronics applications particularly for metal semiconductor metal based UV detector application. PMID:27398537