Science.gov

Sample records for fr wirtschaftsinformatik insb

  1. Spectroscopic constants and potential energy curves of 47 electronic states of InSb, InSb + , and InSb -

    NASA Astrophysics Data System (ADS)

    Balasubramanian, K.

    1990-07-01

    Spectroscopic constants and potential energy curves of 26 electronic states of InSb, 12 electronic states of InSb+, and 9 electronic states of InSb- are obtained using complete active space self-consistent field, first-order configuration interaction, second-order configuration interaction, and relativistic configuration interaction methods (CASSCF/FOCI/SOCI/RCI), including spin-orbit interaction. The SOCI calculations included up to 700 000 configurations. Spectroscopic constants obtained predict several allowed electronic transitions for InSb, InSb+, and InSb- which are yet to be observed. The ground states of InSb, InSb+, and InSb- are found to be X 3Σ-0+, X 4Σ-1/2, and X 2Σ+1/2 with the constants InSb X 3Σ-0+:Re =3.02 Å, ωe =121 cm-1, De =1.35 eV; X 3Σ-1 : Re =3.03 Å, ωe =136 cm-1, Te =494 cm-1; InSb+ X 4Σ-1/2 : Re =3.351 Å, ωe =63 cm-1, De =0.37 eV; and InSb- X 2Π3/2 : Re =2.695 Å, ωe =191 cm-1, De =2.5 eV. The adiabatic ionization potential and electron affinity of InSb are calculated as 6.33 and 1.41 eV, respectively. Analogous to the recently observed A 3Π-X3Σ- system of GaAs, spectral bands in the 20 200 cm-1 region are predicted for InSb. Another 3Π(II)-X3Σ- system is predicted at 15 830 cm-1. Both the 3Π states in these systems are found to be predissociated through crossing of a repulsive 5Σ- curve. The two low-lying electronic states of InSb- (2Σ+1/2, 2Π1/2) undergo relativistic avoided crossing.

  2. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    NASA Astrophysics Data System (ADS)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  3. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  4. Megapixel digital InSb detector for midwave infrared imaging

    NASA Astrophysics Data System (ADS)

    Shkedy, Lior; Markovitz, Tuvy; Calahorra, Zipi; Hirsh, Itay; Shtrichman, Itay

    2011-06-01

    Since the late 1990s Semiconductor devices (SCDs) has developed and manufactured a variety of InSb two-dimensional (2D) focal plane arrays (FPAs) that were implemented in many infrared (IR) systems and applications. SCD routinely manufactures both analog and digital InSb FPAs with array formats of 320×256, 480×384, and 640×512 elements, and pitch size in the range 15 to 30 μm. These FPAs are available in many packaging configurations, including fully integrated detector-Dewar-cooler-assembly, with either closed-cycle Stirling or open-loop Joule-Thomson coolers. In response to a need for very high resolution midwave IR (MWIR) detectors and systems, SCD has developed a large format 2D InSb detector with 1280×1024 elements and pixel size of 15 μm. A digital readout integrated circuit (ROIC) is coupled by flip-chip bonding to the megapixel InSb array. The ROIC is fabricated in CMOS 0.18-μm technology, that enables the small pixel circuitry and relatively low power generation at the focal plane. The digital ROIC has an analog to digital (A/D) converter per-channel and allows for full frame readout at a rate of 100 Hz. Such on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The digital readout, together with the InSb detector technology, lead to a wide linear dynamic range and low residual nonuniformity, which is stable over a long period of time following a nonuniformity correction procedure. A special Dewar was designed to withstand harsh environmental conditions while minimizing the contribution to the heat load of the detector. The Dewar together with the low power ROIC, enable a megapixel detector with overall low size, weight, and power with respect to comparable large format detectors. A variety of applications with this detector make use of different cold shields with different f-number and spectral filters. In this paper we present actual performance characteristics of the

  5. InAs-mediated growth of vertical InSb nanowires on Si substrates

    PubMed Central

    2013-01-01

    In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications. PMID:23883403

  6. Spin polarized current in InSb based structures

    NASA Astrophysics Data System (ADS)

    Frazier, M.; Bhowmick, M.; Heremans, J. J.; Khodaparast, G. A.; Chung, S. J.; Santos, M. B.; Liu, X.; Furdyna, J.

    2009-03-01

    Recently, there has been much interest in developing and exploring spin based semiconductor devices and phenomena. One of the key challenges in developing spin based devices is to generate, control, and measure spin currents directly. In this talk, we report interband circular photogalvanic (CPG) effects using pulsed near-infrared radiation in InSb quantum wells and two InSb films grown on GaAs and InP substrates. We observe a CPG current whose direction and magnitude depend on the helicity of the incident light, the angle of incidence, and temperature. Our observation is important to understand zero- field spin splitting mechanisms in a system with strong spin- orbit interaction.

  7. Surface passivation of backside-illuminated InSb FPAs

    NASA Astrophysics Data System (ADS)

    Wei, Peng; Zheng, Kelin; Wang, Liwen; Geng, Dongfeng; Su, Xianjun

    2016-10-01

    A method of passivation of etch-thinned bulk InSb by anodic oxide grown by wet anodization and vacuum deposition of SiNx layers have been investigated Thinned bulk n-type InSb with (111) orientation forms distinctively two types of interfaces on the indium and antimony faces, respectively. The junctions are diffused on the indium face. The paper presents the process and characterization for surface passivation of the backside illuminated Sb face that absorbs the photons. The surface passivation and the interfaces are characterized with Metal-Insulator-Semiconductor (MIS) devices. The effect of anodic oxide/SiNx passivation was compared to SiNx passivation. The electrical features observed in the C-V curves of MIS structures indicate that anodic oxide grown by wet anodization has the better effect on reducing the surface states and surface recombination velocity. The low-frequency-like response in the inversion region of the C-V curves was explained in view of the oxidation states of In and Sb. Finally, by growing the 30nm anodic oxide and depositing 400nm SiNx on diode structure of InSb, the performance of FPA in this case was compared with the SiNx only method. The results showed the performance of device is better than for the SiNx only method.

  8. Low-background InSb array development

    NASA Technical Reports Server (NTRS)

    Thom, R. D.; Yang, B. T.

    1986-01-01

    Photovoltaic indium antimonide (PV InSb) detector technology has matured over the past several years to enable a wide variety of applications to use this high-performance detector material to advantage. The operating conditions for most of the applications to date for back-side illuminated PV InSb arrays have encompassed focal plane temperatures ranging from 40 to approximately 95 K, with the majority in the narrower range between 60 and 80 K. Background flux conditions have ranged from 10 to the 10th power ph/sq cm/sec to 10 to the 16th power ph/sq cm/sec, most typically between 10 to the 12th power and 10 to the 14th power ph/sq cm/sec. Appropriately, the array parameters were optimized for maximum performance over these temperature and background ranges. The key parameters which were peaked in this process were the resistance-area product of the detectors and their quantum efficiency. The Space Infrared Telescope Facility (SIRTF) Infrared Array Camera requirements, however, present very low temperature and background operating conditions, plus the need for very high signal to noise ratios. Preliminary analysis indicates that back-side illuminated PV InSb arrays can be optimized for operation under these conditions, and some performance projections will be presented.

  9. Hard Superconducting Gap in InSb Nanowires.

    PubMed

    Gül, Önder; Zhang, Hao; de Vries, Folkert K; van Veen, Jasper; Zuo, Kun; Mourik, Vincent; Conesa-Boj, Sonia; Nowak, Michał P; van Woerkom, David J; Quintero-Pérez, Marina; Cassidy, Maja C; Geresdi, Attila; Koelling, Sebastian; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Kouwenhoven, Leo P

    2017-04-12

    Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (∼0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two-dimensional electron gases, and topological insulators and holds relevance for topological superconductivity and quantum computation.

  10. InSb charge coupled infrared imaging device: The 20 element linear imager

    NASA Technical Reports Server (NTRS)

    Thom, R. D.; Koch, T. L.; Parrish, W. J.; Langan, J. D.; Chase, S. C.

    1980-01-01

    The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

  11. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    SciTech Connect

    Feng, ShiQuan; Cheng, XinLu; Zhao, JianLing; Zhang, Hong

    2013-07-28

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T{sub e} = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  12. Spin polarized current in an InSb film

    NASA Astrophysics Data System (ADS)

    Frazier, Matthew; Heremans, J. J.; Khodaparast, Giti A.

    2008-03-01

    Recently, there has been much interest in developing and exploring spin based semiconductor devices and phenomena. One of the key challenges in developing spin based devices is to generate, control, and measure spin currents directly. In this talk, we report interband circular photogalvanic (CPG) effects using pulsed near-infrared radiations in an InSb film grown by the MOCVD technique. The film is n-type Te-doped with electron density of ˜ 6.0 x10^15 cm-3 and mobility of 58,500 cm^2/Vs at 100 K. We observe a CPG current whose direction and magnitude depend on the helicity of the incident light, the angle of the incidence, and temperature. Our observation is important to understand zero-field spin splitting mechanisms in a system with strong-spin orbit interaction.

  13. Resonant Terahertz InSb Waveguide Device for Sensing Polymers

    NASA Astrophysics Data System (ADS)

    Bhatt, Shourie Ranjana J.; Bhatt, Piyush; Deshmukh, Prathmesh; Sangala, Bagvanth R.; Satyanarayan, M. N.; Umesh, G.; Prabhu, S. S.

    2016-08-01

    We have demonstrated the possibility of employing a device, designed to operate at terahertz (THz) frequencies, for sensing materials. The device consists of a waveguide section with a pair of stubs located at the middle and oriented transversely to the waveguide axis. The two stubs function as a resonator and, hence, the device would behave as a filter in the THz domain. The device was fabricated by laser micromachining of InSb pellets and was characterized by THz time-domain transmission spectroscopy. For a waveguide width of 740 μm and stub length of 990 μm, a transmission minimum is seen to occur at 0.265 THz. We investigated the capability of the device to sense polystyrene, dissolved in toluene, loaded into the stubs. The consequent change in the refractive index in the stubs alters the transmitted signal intensity. Our results show that, a change in concentration of polystyrene even by 1 mol/L, leads to measurable change in the transmission coefficient close to the resonant frequency of the device. Thus, our device operating at THz frequencies shows promising potential as chemical and bio sensors.

  14. Magneto-optical properties of InSb for terahertz applications

    NASA Astrophysics Data System (ADS)

    Chochol, Jan; Postava, Kamil; Čada, Michael; Vanwolleghem, Mathias; Halagačka, Lukáš; Lampin, Jean-François; Pištora, Jaromír

    2016-11-01

    Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS) and the Fourier transform far-infrared spectroscopy (far-FTIR). A Huge polar magneto-optical (MO) Kerr-effect (up to 20 degrees in rotation) and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T) and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

  15. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  16. Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals

    NASA Astrophysics Data System (ADS)

    Komarov, F. F.; Romanov, I. A.; Vlasukova, L. A.; Milchanin, O. V.; Parkhomenko, I. N.; Kovaleva, T. B.; Korolik, O. V.; Mudryi, A. V.; Wendler, E.

    2017-01-01

    Transmission electron microscopy (TEM), Raman scattering (RS), and photoluminescence (PL) techniques are used to study the structure, phase composition, and radiative properties of silicon with implanted InSb nanocrystals produced by implanting Sb+ and In+ ions with energies of 350 keV and fluences of 3.5·1016 cm-2 followed by heat treatment at 1100°C for 3, 10, and 60 min. The TEM and RS data confirm the formation of InSb nanocrystals with sizes ranging from 2 to 50 nm in the implanted and annealed samples. A broad band in the 0.8-1.05 eV range is detected in low-temperature (4.2 K) PL spectra of the annealed samples. The possible mechanisms for the luminescence in this range are luminescence of InSb nanocrystals and radiative recombination between the conduction band of silicon and an In acceptor.

  17. Theoretical investigation of the isomer shift of InSb under pressure

    NASA Astrophysics Data System (ADS)

    Sharma, S.; Dewhurst, J. K.; Nordström, L.; Johansson, B.

    2002-04-01

    The nuclear calibration constant α for 121Sb is calculated from the correlation between the experimental isomer shift (IS) and theoretical contact charge densities. The contact charge densities are calculated using the full-potential linear augmented-plane-wave method, within both the local density and the generalized gradient approximations. The IS for Sb in various phases of InSb under pressure is then calculated. This study shows that before the transition of InSb to a metallic state, the Sb IS becomes more positive with increasing pressure. After each subsequent phase transformation the IS shows a large change in the negative direction. These results used in conjunction with Mössbauer experiments may be useful in identifying phases of InSb at high pressure.

  18. Effects of buffer layers on the structural and electronic properties of InSb films

    SciTech Connect

    Weng, X.; Rudawski, N.G.; Wang, P.T.; Goldman, R.S.; Partin, D.L.; Heremans, J.

    2005-02-15

    We have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb+InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy (TEM) indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation (filtering) of threading dislocations for the low-misfit (high-misfit and step-graded) buffers. A quantitative analysis of electron mobility and carrier-concentration dependence on threading dislocation density suggests that electron scattering from the lattice dilation associated with threading dislocations has a stronger effect on electron mobility than electron scattering from the depletion potential surrounding the dislocations. Furthermore, while lattice dilation is the predominant mobility-limiting factor in these n-doped InSb films, ionized impurity scattering associated with dopants also plays a role in limiting the electron mobility.

  19. Effects of buffer layers on the structural and electronic properties of InSb films

    NASA Astrophysics Data System (ADS)

    Weng, X.; Rudawski, N. G.; Wang, P. T.; Goldman, R. S.; Partin, D. L.; Heremans, J.

    2005-02-01

    We have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb +InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy (TEM) indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation (filtering) of threading dislocations for the low-misfit (high-misfit and step-graded) buffers. A quantitative analysis of electron mobility and carrier-concentration dependence on threading dislocation density suggests that electron scattering from the lattice dilation associated with threading dislocations has a stronger effect on electron mobility than electron scattering from the depletion potential surrounding the dislocations. Furthermore, while lattice dilation is the predominant mobility-limiting factor in these n-doped InSb films, ionized impurity scattering associated with dopants also plays a role in limiting the electron mobility.

  20. Recent progress in InSb based quantum detectors in Israel

    NASA Astrophysics Data System (ADS)

    Klipstein, Philip; Aronov, Daniel; Ezra, Michael ben; Barkai, Itzik; Berkowicz, Eyal; Brumer, Maya; Fraenkel, Rami; Glozman, Alex; Grossman, Steve; Jacobsohn, Eli; Klin, Olga; Lukomsky, Inna; Shkedy, Lior; Shtrichman, Itay; Snapi, Noam; Yassen, Michael; Weiss, Eliezer

    2013-07-01

    InSb is a III-V binary semiconductor material with a bandgap wavelength of 5.4 μm at 77 K, well matched to the 3-5 μm MWIR atmospheric transmission window. When configured as a Focal Plane Array (FPA) detector, InSb photodiodes offer a large quantum efficiency, combined with excellent uniformity and high pixel operability. As such, InSb arrays exhibit good scalability and are an excellent choice for large format FPAs at a reasonable cost. The dark current is caused by Generation-Recombination (G-R) centres in the diode depletion region, and this leads to a typical operating temperature of ˜80 K in detectors with a planar implanted p-n junction. Over the last 15 years SCD has developed and manufactured a number of different 2-dimensional planar FPA formats, with pitches in the range of 15-30 μm. In recent years a new epi-InSb technology has been developed at SCD, in which the G-R contribution to the dark current is reduced. This enables InSb detector operation at 95-100 K, with equivalent performance to standard InSb at 80 K. In addition, using a new patented XBnn device architecture in which the G-R current is totally suppressed, epitaxial InAsSb detectors have been developed with a bandgap wavelength of 4.2 μm, which can operate in the 150-170 K range. In this short review of the past two decades, a number of key achievements in SCD's InSb based detector development program are described. These include High Operating Temperature (HOT) epi-InSb FPAs, large format megapixel FPAs with high functionality using a digital Read Out Integrated Circuit (ROIC), and ultra low Size, Weight and Power (SWaP) FPAs based on the HOT XBnn architecture.

  1. Hybrid superconductor-quantum point contact devices using InSb nanowires

    NASA Astrophysics Data System (ADS)

    Gill, S. T.; Damasco, J.; Car, D.; Bakkers, E. P. A. M.; Mason, N.

    2016-12-01

    Proposals for studying topological superconductivity and Majorana bound states in a nanowire proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous works on hybrid nanowire-superconductor systems have shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this paper, we demonstrate ballistic transport in the InSb nanowires interfaced directly with superconducting Al by observing quantized conductance at zero-magnetic field. Additionally, we demonstrate that the nanowire is proximity coupled to the superconducting contacts by observing Andreev reflection. These results are important steps for robustly establishing topological superconductivity in the InSb nanowires.

  2. Multifunctional sensors operating at 300 K based on quasi-ballistic InSb quantum well nanostructures

    NASA Astrophysics Data System (ADS)

    Gilbertson, Adam; Moseley, Dominic; Kustov, Mikhail; Solin, Stuart; Cohen, Lesley; Bending, Simon

    2015-03-01

    The high mobility (μ) of InSb quantum well (QW) heterostructures at 300 K makes them ideally suited for both magnetic and optical sensing. While macroscopic InSb Hall sensors offer the best magnetic sensitivity at 300 K of any material, the operation of sub-micron InSb QW Hall probes have not been reported. Ballistic transport at 300 K in nano-InSb devices was recently described. Here we report the 300 K sensing properties of InSb QW structures fabricated into scanning probe geometries operating in the photoconductive (PC), Hall, and magnetoconductive modes. Sub-micron InSb QW probes exhibit excellent magnetic sensitivity <1 μT/ √Hz and are demonstrated in a scanning Hall probe measurement. InSb QWs exhibit long lived negative photoconductivity in the visible to near-IR for cw excitation, however, significant improvements in dynamic response are found with ac modulated techniques. From spatially resolved PC measurements we determine μτ ~ 3.5 x10-3 cm2/V. These results provide a benchmark for developing novel InSb QW-metal hybrid nanosensors. On sabbatical from Washington University in St. Louis.

  3. Enhanced Raman Scattering from InSb Nanodots; Temperature and Laser-Power Dependent Studies

    NASA Astrophysics Data System (ADS)

    Wada, Noboru; Takayama, Haruki; Morohashi, Satoshi

    2010-03-01

    InSb nanodots were uniquely fabricated by vapor-transport on a Si substrate which had previously been bombarded by FBI Ga ions. The InSb nanodots were then examined by spatially-resolved Raman scattering using an Ar-ion laser (λ= 514.5 and 488 nm with P=1˜15 mW) with an optical microscope and CCD detector. In addition to the TO and LO peaks of InSb observed at ˜180 and 191 cm-1 respectively, two peaks were observed at ˜110 and 150 cm-1. Those Raman peaks were tentatively attributed to the 2TA and TO-TA second-order Raman processes. Those two peak intensities appeared to grow at the expense of the TO and LO Raman peak intensities with increasing the sample temperature from 10 K to 450 K. Also, the two-phonon peak intensities increased non-linearly with the probing laser power used. Hot carriers and their interactions with phonons in the restricted regions will be discussed together with Raman scattering results obtained from single-crystal InSb.

  4. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGES

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  5. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  6. Ab initio calculations of the optical properties of crystalline and liquid InSb

    SciTech Connect

    Sano, Haruyuki; Mizutani, Goro

    2015-11-15

    Ab initio calculations of the electronic and optical properties of InSb were performed for both the crystalline and liquid states. Two sets of atomic structure models for liquid InSb at 900 K were obtained by ab initio molecular dynamics simulations. To reduce the effect of structural peculiarities in the liquid models, an averaging of the two sets of the calculated electronic and optical properties corresponding to the two liquid models was performed. The calculated results indicate that, owing to the phase transition from crystal to liquid, the density of states around the Fermi level increases. As a result, the energy band gap opening near the Fermi level disappears. Consequently, the optical properties change from semiconductor to metallic behavior. Namely, owing to the melting of InSb, the interband transition peaks disappear and a Drude-like dispersion is observed in the optical dielectric functions. The optical absorption at a photon energy of 3.06 eV, which is used in Blu-ray Disc systems, increases owing to the melting of InSb. This increase in optical absorption is proposed to result from the increased optical transitions below 2 eV.

  7. Solidification of InSb-GaSb alloy and InSb with vibration

    NASA Technical Reports Server (NTRS)

    Yuan, Weijun

    1992-01-01

    The objective of this project is to determine the influence of vibration on the composition homogeneity and microstructure of alloy semiconductors solidified with the Vertical Bridgman-Stockbarger (VBS) technique. InSb-GaSb and InSb were directionally solidified in a VBS apparatus with axial vibration of the ampoule.

  8. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    NASA Astrophysics Data System (ADS)

    Aureau, D.; Chaghi, R.; Gerard, I.; Sik, H.; Fleury, J.; Etcheberry, A.

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br2 and H2O2 and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III-V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr-Br2:H2O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H3PO4-H2O2:H2O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  9. Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

    PubMed

    Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

    2015-01-27

    The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

  10. Self-assembly of a 1-eicosanethiolate layer on InSb(100)

    NASA Astrophysics Data System (ADS)

    Contreras, Yissel; Muscat, Anthony J.

    2016-05-01

    1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm-1 in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

  11. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  12. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

    SciTech Connect

    Theocharous, Evangelos

    2005-10-10

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar.

  13. Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

    PubMed Central

    2013-01-01

    Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

  14. MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates

    NASA Astrophysics Data System (ADS)

    de Lyon, T. J.; Rajavel, R. D.; Nosho, B. Z.; Terterian, S.; Beliciu, M. L.; Patterson, P. R.; Chang, D. T.; Boag-O'Brien, M. F.; Holden, B. T.; Jacobs, R. N.; Benson, J. D.

    2010-07-01

    An investigation of the heteroepitaxial growth of HgCdTe films onto InSb(211)B substrates is reported. High-quality HgCdTe(211)B single-crystal films have been successfully deposited onto InSb(211)B substrates and have been characterized with x-ray diffraction rocking curve analysis, etch pit density analysis, and surface void defect mapping. X-ray rocking curve (422) reflection full-width at half-maximum of 60 arcsec has been obtained for 7- μm-thick x = 0.22 HgCdTe epitaxial films, and etch pit densities of 3 × 106 cm-2 to 3 × 107 cm-2 have been observed. A significant reduction in HgCdTe void defect densities to 100 cm-2 to 200 cm-2 has been observed on InSb, including a complete absence of large “void cluster” defects that are often observed for growth on CdZnTe. Wafer bow induced by the growth of HgCdTe on InSb is less than 1 μm for 2-inch-diameter substrates. Significant diffusion of In into HgCdTe is observed for HgCdTe/InSb wafers that are subjected to Hg anneals at 250°C to 300°C. A preliminary investigation of the transfer of HgCdTe films from InSb onto Si substrates has also been undertaken, using an adhesive wafer bonding approach evaluated with scanning acoustic microscopy. The infrared transmission characteristics of the bonding adhesive have been investigated with respect to postgrowth annealing procedures to establish the compatibility of the bonding approach with HgCdTe device processing and detector operation.

  15. Structural stability and electronic properties of InSb nanowires: A first-principles study

    SciTech Connect

    Zhang, Yong; Tang, Li-Ming Ning, Feng; Chen, Ke-Qiu; Wang, Dan

    2015-03-28

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  16. Terahertz emission from InSb illuminated by femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Arlauskas, A.; Subačius, L.; Krotkus, A.; Malevich, V. L.

    2017-02-01

    Athough terahertz (THz) radiation from semiconductor surfaces illuminated by femtosecond laser pulses was observed a long time ago, the mechanisms responsible for this radiation still remains questionable, especially in narrow band gap semiconductors. Four different crystallographic orientation {(1 0 0), (1 1 0), (1 1 1) and (1 1 2)} InSb samples were analyzed in this investigation. THz amplitude dependences on the excitation wavelength and azimuthal angle are presented in this paper. We have shown that the second order nonlinear effect—optical rectification—is responsible for THz radiation in InSb. The microscopic origin of this effect is related to the orientation of electrons momenta by the optical radiation and anisotropy of the conduction band at high energies. Monte Carlo simulations have shown that electric field screening by intrinsic carriers diminishes the contribution of the third order nonlinear effect in this material.

  17. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.

    PubMed

    de la Mata, María; Leturcq, Renaud; Plissard, Sébastien R; Rolland, Chloé; Magén, César; Arbiol, Jordi; Caroff, Philippe

    2016-02-10

    Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

  18. Spectral dependencies of terahertz emission from InAs and InSb

    SciTech Connect

    Adomavicius, R.; Molis, G.; Krotkus, A.; Sirutkaitis, V.

    2005-12-26

    Spectral dependences of the THz radiation from the laser-illuminated surfaces of InAs and InSb have been investigated experimentally at high optical fluences for the laser wavelengths ranging from 0.6 to 2 {mu}m. Efficient THz generation was discovered in the excitation range around 1.6 {mu}m. The influence of the intervalley scattering was clearly evidenced. The energy position of the subsidiary conduction band valleys was evaluated from this study to be equal 1.08 and 0.53 eV for InAs and InSb, respectively. It has been concluded that THz emission at high excitation fluencies is dominated by the shift current effect.

  19. Growth of high mobility InSb by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Partin, D. L.; Green, L.; Heremans, J.

    1994-02-01

    Thin films of InSb have been grown on insulating GaAs substrates using the metalorganic chemical vapor deposition technique with trimethyl indium and trimethyl antimony as reactants. We find that the mobilities obtained are usually low unless indium is predeposited onto the substrate. This indium predeposition technique greatly improves the yield of InSb films with mobilities of ~50000 crn2V-1S-1 at room temperature and a typical thickness of 2 microns. With this predeposition technique, the electron mobilities of these films become relatively independent of the vapor stroichiometry during growth and of the growth temperature. The electron mobilities are also very uniform across a wafer. These properties are obtained even when the film growth rate exceeds 2 μm/h.

  20. Negative magnetoresistance in (InSb)1-xYx at low temperature

    NASA Astrophysics Data System (ADS)

    Yang, J.; Heremans, J.; Partin, D. L.; Thrush, C. M.; Naik, R.

    1998-02-01

    We report the low temperature negative magnetoresistance and magnetization of molecular beam epitaxy grown (InSb)1-xYx for a range of yttrium concentrations (0.03%⩽x⩽4.0%). Our experimental results from x-ray diffraction, Hall effect, and magnetization measurements suggest that the yttrium atoms are located as interstitials in the InSb lattice and hence do not hybridize their outer shell d electrons with the InSb band leading to localized moments. Although the magnetization versus magnetic field (B) data do not fit brilliouin function for all the temperatures studied, we clearly observe a correlation between the measured negative magnetoresistance and the magnetic moment. We believe that the s-d exchange interaction between the localized electrons of Y atoms and the conduction electrons gives rise to the large negative magnetoresistance observed. A theoretical model is used to explain the scattering mechanism. According to this model, when the conduction electrons in the lower subband of InSb have energy E smaller than the Zeeman splitting AM, where A is the s-d exchange integral and M is the magnetic moment, the lower subband conduction electrons are scattered from the d spins without changing their spin projections. On the other hand, as E becomes greater than AM, the spin-flip process can be thermally activated. For the conduction electrons in the upper subband, both spin-flip and spin-non-flip coexist. Therefore the model uses two distinctive relaxation times rather than just one. A numerical calculation is performed to fit the relation between the magnetoresistance and the magnetic moment of the yttrium atoms.

  1. Polymorphism and the crystal structures of InSb at elevated temperature and pressure

    NASA Technical Reports Server (NTRS)

    Yu, S.-C.; Spain, I. L.; Skelton, E. F.

    1978-01-01

    The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.

  2. Schottky barrier and contact resistance of InSb nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Kang, N.; Gorji Ghalamestani, Sepideh; Dick, Kimberly A.; Xu, H. Q.

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height {{{Φ }}}{{SB}}˜ 20 {{meV}} is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance ({R}{{c}}) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that {R}{{c}} in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field {B}{{c}}. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

  3. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    PubMed Central

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  4. Nanoporosity-induced superhydrophobicity and large antireflection in InSb

    NASA Astrophysics Data System (ADS)

    Datta, Debi Prasad; Som, Tapobrata

    2016-05-01

    A porous nanostructure evolves in InSb due to keV ion implantation which leads to superhydrophobic and large antireflective property, indicating a single-step facile fabrication to introduce both functionalities. In particular, it is observed that the contact angle of a water droplet on the nanoporous InSb surface exceeds 150°, revealing the transition to a superhydrophobic surface. Correlation between the contact angle and the porous nanostructures is qualitatively understood in light of the Cassie-Baxter model. It is found that a decrease in the fraction of solid surface wetted by the water droplet and a corresponding increase in the air-water interface fraction lead to the enhancement in the hydrophobicity. We further observe that the large broadband antireflection (in the range of 200-800 nm) is also correlated to the nanoporous structure, arising out of a large reduction in the refractive index due to its increasing porosity. Such a surface with the combination of superhydrophobicity and large antireflection can be very useful for applications of InSb nanostructures in electronic, photonic devices, or infrared detectors.

  5. Simultaneous sensing of film thickness and temperature using an InSb Hall element

    NASA Astrophysics Data System (ADS)

    Yuji, Jun-ichiro; Ueda, Tohru

    2016-04-01

    This paper describes a unique sensing method to apply an InSb Hall element that enables simultaneous sensing device to detect thickness of insulating film on an iron plate and temperature. We made a trial thickness-temperature sensor consists of an InSb Hall element and a small permanent magnet. Here, the film thickness is detected by the variation in distance between the Hall element with the magnet and the iron plate. The temperature characteristic of an InSb Hall element depends on the drive circuit to generate the Hall voltage. Therefore, the Hall element is driven using a constant voltage source and a constant current source by time-division to obtain two kinds of Hall output voltages. Two output Hall voltages driven by two kinds of bias circuits are measured in the film thickness range from 0 to 500 μm, and for a temperature range of -10 to 70 °C. The inverse response surfaces that are used to identify the thickness of insulating film and temperature are formulated using experimental results. The results obtained show that it is possible to detect film thickness and temperature by obtaining two kinds of Hall voltages.

  6. Study of advanced InSb arrays for SIRTF (Space Infrared Telescope Facility)

    NASA Technical Reports Server (NTRS)

    Hoffman, Alan; Feitt, Robert

    1989-01-01

    The Santa Barbara Research Center has completed a study leading to the development of advanced Indium Antimonide detector arrays for the Space Infrared Telescope Facility (SIRTF) Focal Plane Array Detector (FPAD) Subsystem of the Infrared Array Camera (IRAC) Band 1. The overall goal of the study was to perform design tradeoff studies, analysis and research to develop a Direct Readout Integrated Circuit to be hybridized to an advanced, high performance InSb detector array that would satisfy the technical requirements for Band 1 as specified in the IRAC Instrument Requirements Document (IRD), IRAC-202. The overall goal of the study was divided into both a near-term goal and a far-term goal. The near-term goal identifies current technology available that approaches, and in some cases meets the program technological goals as specified in IRAC-202. The far-term goal identifies technology development required to completely achieve SIRTF program goals. Analyses of potential detector materials indicates that InSb presently meets all Band 1 requirements and is considered to be the baseline approach due to technical maturity. The major issue with regard to photovoltaic detectors such as InSb and HgCdTe is to achieve a reduction in detector capacitance.

  7. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  8. Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

    SciTech Connect

    D'Costa, Vijay Richard Yeo, Yee-Chia; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt

    2015-06-14

    Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06–4.6 eV shows the critical point transitions E{sub 0}, E{sub 1}, E{sub 1} + Δ{sub 1}, E{sub 0}{sup ′}, and E{sub 2}. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics.

  9. Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation.

    PubMed

    Pandya, Sneha G; Kordesch, Martin E

    2015-12-01

    Nanoparticles (NPs) of indium antimonide (InSb) were synthesized using a vapor phase synthesis technique known as inert gas condensation (IGC). NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grids and (111) p-type silicon wafers. TEM studies showed a bimodal distribution in the size of the NPs with average particle size of 13.70 nm and 33.20 nm. The Raman spectra of InSb NPs exhibited a peak centered at 184.27 cm(-1), which corresponds to the longitudinal optical (LO) modes of phonon vibration in InSb. A 1:1 In-to-Sb composition ratio was confirmed by energy dispersive X-ray (EDX). X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (HRTEM) studies revealed polycrystalline behavior of these NPs with lattice spacing around 0.37 and 0.23 nm corresponding to the growth directions of (111) and (220), respectively. The average crystallite size of the NPs obtained using XRD peak broadening results and the Debye-Scherrer formula was 25.62 nm, and the value of strain in NPs was found to be 0.0015. NP's band gap obtained using spectroscopy and Fourier transform infrared (FTIR) spectroscopy was around 0.43-0.52 eV at 300 K, which is a blue shift of 0.26-0.35 eV. The effects of increased particle density resulting into aggregation of NPs are also discussed in this paper.

  10. Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation

    NASA Astrophysics Data System (ADS)

    Pandya, Sneha G.; Kordesch, Martin E.

    2015-06-01

    Nanoparticles (NPs) of indium antimonide (InSb) were synthesized using a vapor phase synthesis technique known as inert gas condensation (IGC). NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grids and (111) p-type silicon wafers. TEM studies showed a bimodal distribution in the size of the NPs with average particle size of 13.70 nm and 33.20 nm. The Raman spectra of InSb NPs exhibited a peak centered at 184.27 cm-1, which corresponds to the longitudinal optical (LO) modes of phonon vibration in InSb. A 1:1 In-to-Sb composition ratio was confirmed by energy dispersive X-ray (EDX). X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (HRTEM) studies revealed polycrystalline behavior of these NPs with lattice spacing around 0.37 and 0.23 nm corresponding to the growth directions of (111) and (220), respectively. The average crystallite size of the NPs obtained using XRD peak broadening results and the Debye-Scherrer formula was 25.62 nm, and the value of strain in NPs was found to be 0.0015. NP's band gap obtained using spectroscopy and Fourier transform infrared (FTIR) spectroscopy was around 0.43-0.52 eV at 300 K, which is a blue shift of 0.26-0.35 eV. The effects of increased particle density resulting into aggregation of NPs are also discussed in this paper.

  11. Evolution of structural and electronic properties of highly mismatched InSb films

    NASA Astrophysics Data System (ADS)

    Weng, X.; Goldman, R. S.; Partin, D. L.; Heremans, J. P.

    2000-12-01

    We have investigated the evolution of structural and electronic properties of highly mismatched InSb films, with thicknesses ranging from 0.1 to 1.5 μm. Atomic force microscopy, cross-sectional transmission electron microscopy, and high-resolution x-ray diffraction show that the 0.1 μm films are nearly fully relaxed and consist of partially coalesced islands, which apparently contain threading dislocations at their boundaries. As the film thickness increases beyond 0.2 μm, the island coalescence is complete and the residual strain is reduced. Although the epilayers have relaxed equally in the <110> in-plane directions, the epilayer rotation about an in-plane axis (epilayer tilt) is not equal in both <110> in-plane directions. Interestingly, the island-like surface features tend to be preferentially elongated along the axis of epilayer tilt. Furthermore, epilayer tilt which increases the substrate offcut (reverse tilt) is evident in the [110] direction. High-resolution transmission electron microscopy indicates that both pure-edge and 60° misfit dislocations contribute to the relaxation of strain. In addition, as the film thickness increases, the threading dislocation density decreases, while the corresponding room-temperature electron mobility increases. The other structural features, including the residual strain, and the surface and interface roughness, do not appear to impact the electron mobility in these InSb films. Together, these results suggest that free-carrier scattering from the threading dislocations is the primary room-temperature mobility-limiting mechanism in highly mismatched InSb films. Finally, we show quantitatively that free-carrier scattering from the lattice dilation associated with threading dislocations, rather than scattering from a depletion potential surrounding the dislocations, is the dominant factor limiting the electron mobility.

  12. Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

    NASA Astrophysics Data System (ADS)

    Barfuss, A.; Dudy, L.; Scholz, M. R.; Roth, H.; Höpfner, P.; Blumenstein, C.; Landolt, G.; Dil, J. H.; Plumb, N. C.; Radovic, M.; Bostwick, A.; Rotenberg, E.; Fleszar, A.; Bihlmayer, G.; Wortmann, D.; Li, G.; Hanke, W.; Claessen, R.; Schäfer, J.

    2013-10-01

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

  13. Initial Transient in Zn-doped InSb Grown in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A G.; Marin, C.; Volz, M.; Duffar, T.

    2009-01-01

    Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

  14. Localization and antilocalization in InSb and InAs antidot lattices

    NASA Astrophysics Data System (ADS)

    Peters, J. A.; Chen, Hong; Pan, Yue; Guan, Yafei; Heremans, J. J.; Goel, N.; Chung, S. J.; Santos, M. B.; Van Roy, W.; Borghs, G.

    2006-08-01

    We report on the observation of localization, antilocalization and Altshuler-Aronov-Spivak (AAS) oscillations in antidot lattices patterned on high-mobility InSb/InAlSb and InAs/AlGaSb heterostructures. In addition, the antidot lattices display ballistic commensurability features. The strength of the localization peak in InSb antidot lattices decreases exponentially with temperature, with a high characteristic temperature of ∼25 K between 0.4 and 50 K. Analysis of the AAS oscillations enables the extraction of phase and spin coherence lengths in InAs.

  15. Reconstructions of the sulfur-passivated InSb (100) surface

    NASA Astrophysics Data System (ADS)

    Ciochoń, Piotr; Olszowska, Natalia; Wróbel, Sonia; Kołodziej, Jacek

    2017-04-01

    We have studied the properties of the InSb (100) surface passivated with sulfur dimers emitted by the solid-state electrochemical cell in ultra-high vacuum. Annealing the passivated surface in the temperature equal to T = 326 °C led to the formation of the c(4 × 8) surface reconstruction, while increasing the temperature to T = 348 °C resulted in the transition to c(4 × 12) reconstruction. To the best of our knowledge these reconstructions have not been reported to date and are characterized by the exceptionally good crystallographic order. XPS studies revealed that there are at least 4 different chemical species of sulfur present on the surface and the estimated thickness of the sulfur layers is equal to around 4 Å. The surface reconstructions are characterized by the lowered intensity of the surface electronic states and resonances near the Fermi level, compared to the clean InSb surface, making them potentially very useful for the fabrication of InSb-based electronic and optoelectronic devices.

  16. Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

    PubMed Central

    Obukhov, S. A.; Tozer, S. W.; Coniglio, W. A.

    2015-01-01

    We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm−3 in the temperature range T = 300 K–40 mK, magnetic field B = 0–25T and hydrostatic pressure P = 0–17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes. PMID:26307952

  17. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  18. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B.; Akatay, Cem; Khan, Mohammad Ryyan; Alam, Muhammad A.; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.

    2014-08-28

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  19. Interband and intraband relaxation dynamics in InSb based quantum wells

    NASA Astrophysics Data System (ADS)

    Bhowmick, M.; Khodaparast, G. A.; Mishima, T. D.; Santos, M. B.; Saha, D.; Sanders, G.; Stanton, C. J.

    2016-12-01

    We utilize pump/probe spectroscopy to determine the interband and intraband relaxation dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we observed several time scales for relaxation. One time scale τ3 ranging from 2 ps to 5 ps is due to the intraband relaxation dynamics. Here, both the emission of LO phonons (within the Γ valley) and carrier scattering between the X, L, and Γ valleys contribute to the relaxation. An observed longer relaxation time, τ2 ≈ 20 ps, is attributed to electron-hole recombination across the gap (the interband relaxation time). Finally, using a mid-infrared (MIR) degenerate pump/probe scheme, we observed a very fast relaxation time of ˜1 ps, which is due to the saturation of the band-to-band absorption. Our results are important for developing concepts for InSb devices operating in the THz or MIR optical ranges with the endless need for faster response.

  20. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

    PubMed Central

    2013-01-01

    Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain. PMID:23866944

  1. Molar and excess volumes of liquid In-Sb, Mg-Sb, and Pb-Sb alloys

    SciTech Connect

    Hansen, A.R.; Kaminski, M.A. ); Eckert, C.A. )

    1990-04-01

    By a direct Archimedes' technique, volumetric data were obtained for liquid In, Mg, Pb, and Sb and mixtures of In-Sb, Mg-Sb, and Pb-Sb. In this paper the excess volumes for the alloys studied are presented and discussed.

  2. Growth and characterization of 6" InSb substrates for use in large-area infrared-imaging applications

    NASA Astrophysics Data System (ADS)

    Furlong, Mark J.; Dallas, Gordon; Meshew, Greg; Flint, J. Patrick; Small, David; Martinez, Becky; Mowbray, Andrew

    2014-06-01

    In this paper we report on an industry first; the growth and characterization of 6" diameter indium antimonide (InSb) substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors. Results will be presented on the production of single crystal 6" InSb ingots grown by the Czochralski (Cz) technique. We will also assess the electrical quality of new 6" InSb crystals and present uniformity information on Hall mobility, resistivity and carrier level from which we will infer comparisons on the relative dark current performance of the material grown. High quality, epitaxy-ready type surfaces have been prepared and we will demonstrate how the key surface quality characteristics of roughness (<0.5nm rms), oxide thickness (<100Å) and flatness (<7 μm TTV) have been maintained across production processes that scale 4" to 6" wafer formats. We conclude by presenting our road map for the development of large area InSb substrates and describe how developments in Czochralski crystal growth and surface finishing technology will support industry's requirements to deliver higher performance, large format IR focal place array type devices.

  3. Growth and characterization of 6" InSb substrates for use in large area infrared imaging applications

    NASA Astrophysics Data System (ADS)

    Furlong, Mark J.; Dallas, Gordon; Meshew, Greg; Flint, J. Patrick; Small, David; Martinez, Becky; Mowbray, Andrew

    2013-12-01

    In this paper we report on an industry first; the growth and characterization of 6" diameter indium antimonide (InSb) substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors. Results will be presented on the production of single crystal 6" InSb ingots grown by the Czochralski (Cz) technique. We will also assess the electrical quality of new 6" InSb crystals and present uniformity information on Hall mobility, resistivity and carrier level from which we will infer comparisons on the relative dark current performance of the material grown. High quality, epitaxy-ready type surfaces have been prepared and we will demonstrate how the key surface quality characteristics of roughness (< 0.5 nm rms), oxide thickness (<100 Å) and flatness (<7 μm TTV) have been maintained across production processes that scale 4" to 6" wafer formats. We conclude by presenting our road map for the development of large area InSb substrates and describe how developments in Czochralski crystal growth and surface finishing technology will support industry's requirements to deliver higher performance, large format IR focal plane array type devices.

  4. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H2O2 in acidic and basic cleaning solutions

    NASA Astrophysics Data System (ADS)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-03-01

    Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III-V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H2O2 plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H2O2 because gallium and indium are in the thermodynamically stable forms of H2GaO3- and InO2-, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H2O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb with dilution of the APM solution was not significant. Additionally, the oxidation behavior of gallium and indium was more sensitive to the composition of the HPM and APM solutions than that of antimony. Therefore, the surface properties and etching characteristics of GaSb and InSb in HPM and APM solutions are mainly dependent on the behavior of the group III elements rather than the group V elements.

  5. Submillimeter wave absorption of n-type InSb at low temperatures

    NASA Technical Reports Server (NTRS)

    Brown, E. R.

    1985-01-01

    The absorption coefficient of two high-purity n-InSb samples is measured in the 10-40 per cm range using Fourier transform spectroscopy. The absorption coefficient spectrum is presented for both samples at 4.2 K. It is also shown for the lower resistance sample cooled to 2.2 K and heated by dc bias to elevated electron gas temperatures of 7.5 and 17.9 K. ac Drude theory gives rather poor agreement with experiment at 2.2 and 4.2 K but does much better when the sample electron gas is heated. In contrast, a simple quantum mechanical theory of absorption based on inverse Bremsstrahlung yields promising agreement at the lower temperatures although its applicability is questionable. The non-Drudian absorption is shown to have a favorable effect on the performance of InSb hot-electron bolometers.

  6. Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

  7. Reducing noise from a Stirling micro cooler used with an InSb diode

    NASA Astrophysics Data System (ADS)

    Bingham, Nicolas R.; Ashley, Michael C. B.

    2014-07-01

    Stirling micro coolers, such as the K508 from Ricor, are useful components of scientific instruments when there is a need to remove modest amounts of heat (~1/2W) at liquid nitrogren temperatures with an input power of less than 10W. The action of the cooler can, however, couple noise into sensitive detectors through a variety of mechanisms such as electromagnetic interference, mechanical vibration, and small temperature fluctuations. We report on successful noise-mitigation strategies for our application, an InSb diode for detecting light at 2.4 microns. The largest benefit was obtained by sychronizing the integration times with the position of the piston in the micro cooler. The piston position was determined using a hall-effect rotor position sensor in the driving motor.

  8. Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

    NASA Technical Reports Server (NTRS)

    Koch, T. L.; Thom, R. D.; Parrish, W. D.

    1981-01-01

    The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

  9. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-05-15

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  10. Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts.

    PubMed

    Qu, Fanming; van Veen, Jasper; de Vries, Folkert K; Beukman, Arjan J A; Wimmer, Michael; Yi, Wei; Kiselev, Andrey A; Nguyen, Binh-Minh; Sokolich, Marko; Manfra, Michael J; Nichele, Fabrizio; Marcus, Charles M; Kouwenhoven, Leo P

    2016-12-14

    Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

  11. Development of InSb charge-coupled infrared imaging devices: Linear imager

    NASA Technical Reports Server (NTRS)

    Phillips, J. D.

    1976-01-01

    The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

  12. Low-background performance of a monolithic InSb CCD array

    NASA Technical Reports Server (NTRS)

    Bregman, J. D.; Goebel, J. H.; Mccreight, C. R.; Matsumoto, T.

    1982-01-01

    A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.

  13. Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

    NASA Technical Reports Server (NTRS)

    Nakatani, I.

    1993-01-01

    Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

  14. Magnetotransport and magneto-optical properties of δ-doped InSb

    NASA Astrophysics Data System (ADS)

    Heremans, J.; Partin, D. L.; Morelli, D. T.; Thrush, C. M.; Karczewski, G.; Furdyna, J. K.

    1993-08-01

    Results of Shubnikov-de Haas (SdH), cyclotron resonance (CR), and Hall-effect measurements on δ-doped InSb:Si films grown by molecular-beam epitaxy on insulating InP substrates are reported. The investigation covers samples with sheet densities of Si dopant atoms ranging from 1×1011 to 1×1013 cm-2, temperatures from 4.2 to 300 K, and fields from 0 to 7 T. The SdH oscillations show that the samples contain electrons of two-dimensional nature, occupying multiple subbands. The effective masses obtained from the CR data correspond well to the subband occupation densities. The Hall measurements as well as the CR experiments also give evidence for the presence of additional electrons, with the conduction-band-edge mass m*=0.014m0 of bulk InSb, which exist presumably in the bulk of the films.

  15. Quantum coherence oscillations in InSb and InAs

    NASA Astrophysics Data System (ADS)

    Peters, J. A.; Chen, Hong; Heremans, J. J.; Goel, N.; Chung, S. J.; Santos, M. B.; van Roy, W.; Borghs, G.

    2006-03-01

    Quantum oscillation phenomena in parallel arrays of loops have been investigated in InSb/AlInSb and InAs/AlGaSb heterostructures, notable for their strong spin-orbit interaction. The arrays consist of parallel lines of hexagonal lattice cells, forming linear concatenations of loops. From the h/2e periodicity, the dominance of Altshuler-Aronov-Spivak (AAS) oscillations is deduced. Measurement of the temperature dependence of the oscillations enables the extraction of spin and phase coherence lengths in InSb and InAs. The spin coherence lengths show a weak drop with increasing temperature, akin to the mobility mean free path behavior, and consistent with a dominant Elliott-Yafet related spin relaxation mechanism in both heterostructures. The phase coherence lengths follow a power law without observed saturation at the lowest temperatures. NSF DMR-0094055 (JJH), DMR-0080054, DMR-0209371 (MBS).

  16. InSb linear multiplexed FPAs for the CRAF/Cassini visible and infrared mapping spectrometer

    NASA Technical Reports Server (NTRS)

    Niblack, Curtiss; Blessinger, Michael; Forsthoefel, John; Staller, Craig; Sobel, Harold

    1991-01-01

    This paper provides a review of a custom multiplexer circuit designed for use with a 256 element InSb linear array in the CRAF/Cassini VIMS instruments. The requirements, operation noise model and test results from a prototype 1 x 64 array are discussed. The infrared focal plane array (FPA) preliminary design and the impact of the new multiplexer on the instruments' predicted performance will be discussed. Emphasis will be placed on the multiplexer that was designed for the CRAF/Cassini missions. The FPA assembly combines electronic and optical components into a single hermetically sealed hybrid package. The detector configuration is that of a linear dual-multiplexed indium antimonide array with 256 elements, each 103 x 200 on 123-micron centers.

  17. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    SciTech Connect

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-11-30

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10{sup 20 }cm{sup −3} obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.

  18. Observation of Structural Anisotropy and the Onset of Liquidlike Motion During the Nonthermal Melting of InSb

    SciTech Connect

    Gaffney, K.J.; Lindenberg, A.M.; Arthur, J.; Brennan, S.; Luening, K.; Hastings, J.B.; Sokolowski-Tinten, K.; Blome, C.; Duesterer, S.; Ischebeck, R.; Schlarb, H.; Schulte-Schrepping, H.; Schneider, J.; Sheppard, J.; Wark, J.S.; Caleman, C.; Bergh, M.

    2005-09-16

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquidlike dynamics. They also demonstrate that the root-mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  19. Observation of structural anisotropy and the onset of liquidlike motion during the nonthermal melting of InSb.

    PubMed

    Gaffney, K J; Lindenberg, A M; Larsson, J; Sokolowski-Tinten, K; Blome, C; Synnergren, O; Sheppard, J; Caleman, C; MacPhee, A G; Weinstein, D; Lowney, D P; Allison, T; Matthews, T; Falcone, R W; Cavalieri, A L; Fritz, D M; Lee, S H; Bucksbaum, P H; Reis, D A; Rudati, J; Macrander, A T; Fuoss, P H; Kao, C C; Siddons, D P; Pahl, R; Moffat, K; Als-Nielsen, J; Duesterer, S; Ischebeck, R; Schlarb, H; Schulte-Schrepping, H; Schneider, J; von der Linde, D; Hignette, O; Sette, F; Chapman, H N; Lee, R W; Hansen, T N; Wark, J S; Bergh, M; Huldt, G; van der Spoel, D; Timneanu, N; Hajdu, J; Akre, R A; Bong, E; Krejcik, P; Arthur, J; Brennan, S; Luening, K; Hastings, J B

    2005-09-16

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquidlike dynamics. They also demonstrate that the root-mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  20. High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sun, Tai Ping; Lee, Si-Chen; Liu, Kou-Chen; Pang, Yen-Ming; Yang, Sheng-Jehn

    1991-03-01

    The high performance AuCr/Si02/InSb metal-oxidesemiconductor capacitor was fabricated successfully using photo-enhanced chemical vapor deposition. The 1200 A thick Si02 layer was deposited on the InSb substrate at the temperature below 200 °C. Their electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy, respectively. The capacitance-voltage results show that the optimal growth temperature of Si02 is 150 °C at which the fiat-band voltage of the capacitor is close to ideal and slow interface state density is less than 5 x 1O'° cm2. For Si02 deposited at lower temperature, although the flatband voltage and interface state are poorer, the subsequent thermal annealing at 150 °C for 12 hours improves both quantities to the level as the optimal condition. However, for Si02 deposited at higher temperature (190 °C), the flatband voltage shifts to -4 V and the slow state density increases to 1.1 x 1011 cm2. It is found from Auger depth profile that whatever the deposition temperature was a Si-rich region followed by an oxygen-rich region was formed at the 5i02/InSb interface. These observations are shown to be consistent with the electrical characteristics of the capacitor.

  1. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing.

    PubMed

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-22

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air tri-layer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte.

  2. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  3. Growth of InSb and InI Crystals on Earth and in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Churilov, A.; Volz, M. P.; Riabov, V.; Van den Berg, L.

    2015-01-01

    During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in space laboratories. The subsequent analysis of the space-grown crystals revealed (i) that weak convection existed in virtually all melt-growth experiments, (ii) de-wetting significantly reduced the level of stress-induced defects, and (iii) particularly encouraging results were obtained in vapor-growth experiments. In 2002, following a decade of ground based research in growing doped Ge and GaSb crystals, a series of crystal growth experiments was performed at the ISS, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation. Te- and Zn-doped InSb crystals were grown from the melt. The specially designed furnace provided a side-view of the melt and precise seeding measurement of the growth rate. At present, under sponsorship of CASIS (Center for the Advancement of Science in Space, www.iss-casis.org), we are conducting ground-based experiments with indium mono-iodide (InI) in preparation for the "SUBSA II" ISS investigation, planned for 2017. The experiments include: i) Horizontal Bridgman (HB) growth and ii) Vapor Transport (VT) growth. Finite element modeling will also be conducted, to optimize the design of the flight ampoules, for vapor and melt growth.

  4. State-resolved ultrafast dynamics of impact ionization in InSb

    PubMed Central

    Tanimura, H.; Kanasaki, J.; Tanimura, K.

    2014-01-01

    Impact ionization (IMP) is a fundamental process in semiconductors, which results in carrier multiplication through the decay of a hot electron into a low-energy state while generating an electron-hole pair. IMP is essentially a state selective process, which is triggered by electron-electron interaction involving four electronic states specified precisely by energy and momentum conservations. However, important state-selective features remain undetermined due to methodological limitations in identifying the energy and momentum of the states involved, at sufficient temporal resolution, to reveal the fundamental dynamics. Here we report state-resolved ultrafast hot electron dynamics of IMP in InSb, a semiconductor with the lowest band-gap energy. The ultrafast decay of state-resolved hot-electron populations and the corresponding population increase at the conduction band minimum are directly captured, and the rate of IMP is unambiguously determined. Our analysis, based on the direct knowledge of state-resolved hot electrons, provides far deeper insight into the physics of ultrafast electron correlation in semiconductors. PMID:25355408

  5. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  6. Te-and Zn-Doped InSb Crystals Grown in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Marin, C.; Volz, M.; Bonner, W. A.; Duffar, T.

    2004-01-01

    In 2002, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation, seven doped InSb crystals were grown in microgravity at the International Space Station. The key goals of the SUBSA investigation are: (a) to clarify the origin of the melt convection in space laboratories; (b) to reduce melt convection to the level which allows reproducible diffusion-controlled segregation; (e) to explore the submerged baffle process and liquid encapsulation in microgravity. 30 crystal growth experiments were conducted in the ground unit, to optimize the design of flight ampoules and to test the transparent SUBSA furnace developed by TecMasters Inc. The specially designed furnace, allowed observation of the crystal growth process (melting, seeding, motion of the solid-liquid interface, etc.). In the summer of 2002, eight crystal growth experiments were conducted in the Microgravity Science Glovebox (MSG) facility at the ISS. Four Te-doped (k = 0.5) and three Zn-doped (k2.9) crystals were grown on undoped seeds. In one experiment, we were not able to seed and grow. The seven grown crystals were sectioned and analyzed using SIMS. The design of the SUBSA ampoules, the segregation data and the video images obtained during the SUBSA flight experiments will be presented and discussed.

  7. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm{sup −1} per QD layer, and the waveguide loss was ∼15 cm{sup −1} at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0} = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120 K in pulsed mode, which is the highest reported to date.

  8. Structural and morphological features of ultrathin epitaxial InSb films in AlAs matrix

    NASA Astrophysics Data System (ADS)

    Kolotovkina, D. A.; Gutakovskii, A. K.

    2016-11-01

    This work presents results of the investigation of structural and morphological features of epitaxial InSb layers in the AlAs matrix. Our research group used transmission electron microscopy (TEM). The specimens were grown by molecular beam epitaxy and prepared in the cross section (110) and plan view foils (100). We found a formation of the embedded epitaxial layer of solid solution InxAl1-xSbyAs1-y in the AlAs matrix during precipitation of In and Sb on the AlAs surface. The embedded layer had continuous area (wetting layer) and islands. The study revealed two types of islands in the epitaxial layer the first having coherent interfacing with the matrix lattice and the second a relaxed island. We estimated concentration of In, Sb in the solid solution by the indirect method. We used the method of geometric phase to analyze the distribution of misfit dislocation cores on the interface. Every misfit dislocation was formed by two close 600-dislocations with the Burgers vectors like a /2 <110>. The sum Burgers vector of the dislocation pair was in the plane of the interface.

  9. Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

    NASA Astrophysics Data System (ADS)

    Trinh, Hai-Dang; Lin, Yueh-Chin; Nguyen, Minh-Thuy; Nguyen, Hong-Quan; Duong, Quoc-Van; Luc, Quang-Ho; Wang, Shin-Yuan; Nguyen, Manh-Nghia; Yi Chang, Edward

    2013-09-01

    In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10-4 A/cm-2. The Dit value of smaller than 1012 eV-1cm-2 has been obtained using conduction method.

  10. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    SciTech Connect

    Kang, Nam Lyong

    2014-12-07

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  11. Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation.

    PubMed

    Burrows, C W; Hatfield, S A; Bastiman, F; Bell, G R

    2014-10-01

    The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or Sb flux, has been studied by reflection high energy electron diffraction, atomic force microscopy and scanning tunnelling microscopy. On both Ga- and As-terminated GaAs(0 0 1), (2 × n) Mn-induced reconstruction domains arise with n = 2 for the most well ordered reconstructions. On the Ga-terminated (4 × 6), the Mn-induced (2 × 2) persists up to around 0.5 ML Mn followed by Mn nano-cluster formation. For deposition on initially β2(2 × 4)-reconstructed GaAs(0 0 1), the characteristic trench structure of the reconstruction is partially preserved even beyond 1 monolayer Mn coverage. On both the β2(2 × 4) and c(4 × 4) surfaces, MnAs-like nano-clusters form alongside the reconstruction changes. In contrast, there are no new Mn-induced surface reconstructions on InSb. Instead, the Sb-terminated surfaces of InSb (0 0 1), (1 1 1)A and (1 1 1)B revert to reconstructions characteristic of clean In-rich surfaces after well defined coverages of Mn proportional to the Sb content of the starting reconstruction. These surfaces are decorated with self-assembled MnSb nanoclusters. These results are discussed in terms of basic thermodynamic quantities and the generalized electron counting rule.

  12. Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Marin, C.; Duffar, T.; Volz, M.

    2009-01-01

    In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

  13. Frequency dependence of two-photon absorption in InSb and Hg1-xCdxTe

    NASA Astrophysics Data System (ADS)

    Johnston, A. M.; Pidgeon, C. R.; Dempsey, J.

    1980-07-01

    The frequency dependence of two-photon absorption is measured over a wide range in InSb and Hg0.78Cd0.22Te, showing good agreement with a nonparabolic-band perturbation calculation and wide divergence from "tunneling" theory. Associated photoconductivity measurements, required in the analysis, confirm that Auger scattering is the dominant process at room temperature in n-InSb, but at low temperatures have yielded a direct value of the lifetime of τ(77 K)=143 ns for radiative recombination.

  14. An investigation of the multicarrier transport properties of ?-doped InSb at high temperatures using a mobility spectrum technique

    NASA Astrophysics Data System (ADS)

    Panaev, I. A.; Studenikin, S. A.; Tkachenko, V. A.; Tkachenko, O. A.; Heremans, J. P.; Partin, D. L.; Morelli, D. T.; Thrush, C. M.

    1996-12-01

    Transport properties of Si-0268-1242/11/12/016/img12-doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in quantized subbands in the 0268-1242/11/12/016/img12-layer. At low temperatures the MS data are consistent with self-consistent calculations and measurements of the Shubnikov - de Haas oscillations. The far-infrared cyclotron resonance lineshapes are well described by the Drude approximation using the obtained values of subband mobilities, concentrations and effective masses.

  15. Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A.

    2012-06-01

    Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.

  16. Atomic structure of InSb(001) and GaAs(001) surfaces imaged with noncontact atomic force microscopy.

    PubMed

    Kolodziej, J J; Such, B; Szymonski, M; Krok, F

    2003-06-06

    Noncontact atomic force microscopy (NC-AFM) has been used to study the c(8x2) InSb(001) and the c(8x2) GaAs(001) surfaces prepared by sputter cleaning and annealing. Atomically resolved tip-surface interaction maps display different characteristic patterns depending on the tip front atom type. It is shown that representative AFM maps can be interpreted consistently with the most recent structural model of A(III)B(V)(001) surface, as corresponding to the A(III) sublattice, to the B(V) sublattice, or to the combination of both sublattices.

  17. 60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect

    Datta, D. P.; Garg, S. K.; Som, T.; Satpati, B.; Kanjilal, A.; Dhara, S.; Kanjilal, D.

    2014-10-14

    Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  18. GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Hamaida, K.; Bouslama, M.; Ghaffour, M.; Besahraoui, F.; Chelahi-Chikr, Z.; Ouerdane, A.; Abdellaoui, A.; Gendry, M.

    2012-12-01

    Recently, the development of indium oxide such as In2O3 on the III-V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable research due to many methods of its synthesis. In our study, we were interested in developing the indium oxide In2O3 on the In metal and InSb surfaces by electron beam stimulated oxidation. The formation of In2O3 on InSb was advantaged by a previous treatment due to the sputtering of the surface by the argon ions at low energy 300 eV with a current density 2 μA/cm2 followed by heating in UHV at 300°C. Our results were monitored by the analysis techniques including the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) well suited to study the surface with respect to physical structure and chemical composition.

  19. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    SciTech Connect

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q. E-mail: hongqi.xu@ftf.lth.se

    2015-09-07

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  20. Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

  1. InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices.

    PubMed

    Car, Diana; Conesa-Boj, Sonia; Zhang, Hao; Op Het Veld, Roy L M; de Moor, Michiel W A; Fadaly, Elham M T; Gül, Önder; Kölling, Sebastian; Plissard, Sebastien R; Toresen, Vigdis; Wimmer, Michael T; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P; Bakkers, Erik P A M

    2017-02-08

    Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.

  2. Revealing the band structure of InSb nanowires by high-field magnetotransport in the quasiballistic regime

    NASA Astrophysics Data System (ADS)

    Vigneau, Florian; Gül, Önder; Niquet, Yann-Michel; Car, Diana; Plissard, Sebastien R.; Escoffier, Walter; Bakkers, Erik P. A. M.; Duchemin, Ivan; Raquet, Bertrand; Goiran, Michel

    2016-12-01

    The charge transport properties of individual InSb nanowires based transistors are studied at 4.2 K in the quasiballistic regime. The energy level separations at zero magnetic field are extracted from a bias voltage spectroscopy. The magnetoconductance under a magnetic field applied perpendicularly to the nanowire axis is investigated up to 50 T. Owing to the magnetic reduction of the backscattering, the electronic states of the quasi-one-dimensional electron gas are revealed by Landauer-Büttiker conductance quantization. The results are compared to theoretical predictions revealing the spin and orbital degeneracy lifting. At sufficiently high magnetic field the measurements show the evolution to the quantum Hall effect regime with the formation of Landau orbits and conducting edge states.

  3. Influence of Contact Angle, Growth Angle and Melt Surface Tension on Detached Solidification of InSb

    NASA Technical Reports Server (NTRS)

    Wang, Yazhen; Regel, Liya L.; Wilcox, William R.

    2000-01-01

    We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130, which is significantly less than required if both ends of the ampoule are open.

  4. Observation of Structural Anisotropy and the Onset of Liquid-like Motion during the Non-thermal Melting of InSb

    SciTech Connect

    Gaffney, K.J.; Lindenberg, A.M.; Larsson, J.; Sokolowski-Tinten, K.; Blome, C.; Synnergren, O.; Sheppard, J.; Caleman, C.; MacPhee, A.G.; Weinstein, D.; Lowney, D.P.; Allison, T.K.; Matthews, T.; Falcone, R.W.; Cavalieri, A.L.; Dritz, D.M.; Lee, S.H.; Bucksbau, P.H.p a Reis, D.A.; Rudati, J.; Macrander, A.T.; Fuoss, P.H.; /Argonne /BNL, NSLS /Chicago U. /Bohr Inst. /DESY /Duisburg U. /ESRF, Grenoble /LLNL, Livermore /Lund Inst. Tech. /Oxford U. /Uppsala U. /SLAC /SLAC, SSRL

    2005-09-30

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquid-like dynamics. They also demonstrate that the root mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  5. Terahertz polarization converter and one-way transmission based on double-layer magneto-plasmonics of magnetized InSb.

    PubMed

    Fan, Fei; Xu, Shi-Tong; Wang, Xiang-Hui; Chang, Sheng-Jiang

    2016-11-14

    In this work, we investigate the nonreciprocal circular dichroism for terahertz (THz) waves in magnetized InSb by the theoretical calculation and numerical simulation, which indicates that longitudinally magnetized InSb can be applied to the circular polarizer and nonreciprocal one-way transmission for the circular polarization THz waves. Furthermore, we propose a double-layer magnetoplasmonics based on the longitudinally magnetized InSb, and find two MO enhancement mechanisms in this device: the magneto surface plasmon resonance on the InSb-metal surface and Fabry-Pérot resonances between two orthogonal metallic gratings. These two resonance mechanisms enlarge the MO polarization rotation and greatly reduce the external magnetic field below 0.1T. The one-way transmission and perfect linear polarization conversion can be realized over 70dB, of which the transmittance can be modulated from 0 to 80% when the weak magnetic field changes from 0 to 0.1T under the low temperature around 200K. This magnetoplasmonic device has broad potential as a THz isolator, modulator, polarization convertor, and filter in the THz application systems.

  6. Reconstruction phase transition c(4×4) - (1×3) on the (001)InSb surface

    NASA Astrophysics Data System (ADS)

    Bakarov, A.; Galitsyn, Yu.; Mansurov, V.; Zhuravlev, K.

    2017-01-01

    The (001) surface of InSb is the most common growth surface, forming a number of surface reconstructions depending on the both ratio of group III and V species presented on surface and substrate temperature. In the present work surface structures were studied using reflection high energy electron diffraction (RHEED). The c(4×4)↔(1×3) reconstruction transition was investigated in details. The intensity of fractional spots of c(4×4) structure was measured during the variation of antimony flux at different substrate temperatures. At the substrate temperatures of T<400 °C, hysteresis loop of fractional spot intensity appeared during the forward and reverse Sb flux variation, testifying that c(4×4)↔(1×3) transition is discontinuous first order phase transition. At the temperatures T>400 °C, hysteresis loop was not observed, that corresponds to continuous phase transition. It was shown that phase transition is analogous to the van der Waals transition. We developed a model to describe c(4×4)↔(1×3) transition in the framework of the lattice gas approximation. This model takes into account the complex nature of indirect interactions that result in the effective attraction between lattice gas cells forming surface reconstruction. The calculated surface state isotherms are in a good agreement with the experimental isotherms.

  7. XPS study of interface formation of CVD SiO2 on InSb. [X-ray Photoemission Spectroscopy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-01-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  8. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    NASA Astrophysics Data System (ADS)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  9. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates

    NASA Astrophysics Data System (ADS)

    Gray, Nathan W.; Perez-Rubio, Victor; Bolke, Joseph G.; Alexander, W. B.

    2014-10-01

    Focal plane arrays (FPAs) made on InSb wafers are the key cost-driving component in IR imaging systems. The electronic and crystallographic properties of the wafer directly determine the imaging device performance. The "facet effect" describes the non-uniform electronic properties of crystals resulting from anisotropic dopant segregation during bulk growth. When the segregation coefficient of dopant impurities changes notably across the melt/solid interface of a growing crystal the result is non-uniform electronic properties across wafers made from these crystals. The effect is more pronounced in InSb crystals grown on the (111) axis compared with other orientations and crystal systems. FPA devices made on these wafers suffer costly yield hits due to inconsistent device response and performance. Historically, InSb crystal growers have grown approximately 9-19 degree off-axis from the (111) to avoid the facet effect and produced wafers with improved uniformity of electronic properties. It has been shown by researchers in the 1960s that control of the facet effect can produce uniform small diameter crystals. In this paper, we share results employing a process that controls the facet effect when growing large diameter crystals from which 4, 5, and 6" wafers can be manufactured. The process change resulted in an increase in wafers yielded per crystal by several times, all with high crystal quality and uniform electronic properties. Since the crystals are grown on the (111) axis, manufacturing (111) oriented wafers is straightforward with standard semiconductor equipment and processes common to the high-volume silicon wafer industry. These benefits result in significant manufacturing cost savings and increased value to our customers.

  10. Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Tanimura, H.; Kanasaki, J.; Tanimura, K.

    2015-01-01

    Ultrafast scattering processes of hot electrons photoinjected into the conduction band of InSb have been studied using time- and angle-resolved photoemission spectroscopy. The nascent distributions of hot-electron packets are captured directly in energy and momentum spaces, and their ultrafast scattering processes are traced at femtosecond temporal resolution on a state-resolved basis. Hot electrons injected in the Γ valley with excess energies above the minimum of the L valley show ultrafast intervalley scattering, with transition times of the order of 40 fs. The relaxation processes in the L valley are resolved in energy and momentum spaces, including their backscattering into the Γ valley during relaxation. In contrast, relaxation of hot electrons with excess energy below the minimum of the L valley is governed by the direct impact ionization (IMP). We reveal state-selective features of the IMP process, and we have determined the direct IMP rate to be 7 ×1012s-1 for hot electrons with excess energy in the range of 0.35 to 0.6 eV. The direct IMP process results in a rapid increase, within 300 fs after excitation, of the electron density at the conduction band minimum (CBM), and phonon-assisted IMP by hot electrons scattered in the L valley and those backscattered into the Γ valley persistently enhances the electron density up to 8 ps after excitation. By analyzing correlations between the IMP rates of hot electrons and the electron densities near the CBM, an important role of a transient Auger recombination is proposed to quantify the yield of low-energy electrons generated in the IMP process.

  11. Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Biing-Der; Lee, Si-Chen; Sun, Tai-Ping; Yang, Sheng-Jenn

    1995-05-01

    The InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micron were fabricated successfully. The SiO2 prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

  12. The origin of instability in metal/SiO2/InSb capacitor fabricated by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sun, Tai-Ping; Lee, Si-Chen; Yang, Sheng-Jenn

    1989-10-01

    The AuCr/SiO2/InSb MOS capacitor was fabricated using photoenhanced CVD. The electrical and structural properties were analyzed by capacitance-voltage and AES, respectively. The high-frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.

  13. A Study of the Irradiance- and Temperature-Dependence of Mid-Wave-Infrared (MWIR) Absorption in Indium Antimonide (InSb)

    DTIC Science & Technology

    2008-08-01

    developed utilizing LabView 8.5. The transmission of the InSb sample was measured at different laser powers and temperatures. As the temperature...the focal point. Noting the enormous amount of irradiance generated by a small amount of laser power when focused from when not being focused...Figure 1.2-1). A land object may emit an irradiance on a detector 3 system of 10 pW/cm 2 , where a laser can easily generate an irradiance of 1 mW

  14. Drifts exhibited by cryogenically cooled InSb infrared filtered detectors and their importance to the ATSR-2 and Landsat-5 Earth observation missions.

    PubMed

    Theocharous, Evangelos

    2005-07-10

    The spectral responsivity of commercially available InSb detectors with low-pass cold filters attached to their cold shields for optimum operation in the 1.6-2.6 microm wavelength range is observed to drift slowly with time. These drifts are shown to arise because of a thin film of water-ice deposited on the cold low-pass filters mounted on the cold shields of the detectors. The temporal characteristics of these drifts are shown to strongly depend on wavelength. A model is proposed for the behavior of the water present in the Dewar vacuum, which can explain and predict the temporal characteristics of the observed drifts for all wavelengths. These observations are particularly relevant to space instruments that use cryogenically cooled IR filter radiometers for Earth observation. The temporal profile of drifts observed in missions such as Landsat-5 is identical to that observed in cryogenically cooled filtered InSb detectors during laboratory measurements. This study confirms that the deposition of a thin film of a material such as ice on the cold bandpass filters and windows is therefore the most likely source of the oscillatory drifts observed in the response of some of the channels of the ATSR-2, Landsat-4, and Landsat-5 Earth observation missions.

  15. The electronic structure and half-metallic properties of zincblende TiBi (001) surfaces and TiBi(001)/InSb(001) interface

    NASA Astrophysics Data System (ADS)

    Moosavi, N.; Ahmadian, F.; Baghoolizadeh, F.

    2016-12-01

    First principles calculations were performed using full potential linearized augmented plane wave (FPLAPW) method based on density functional theory (DFT) to study bulk TiBi in rock salt (RS), hexagonal NiAs, and zincblende (ZB) structures, free (001) surfaces of ZB TiBi, and interface of ZB TiBi with InSb(001). The nonmagnetic NiAs structure was ground state structure of bulk TiBi and nonmagnetic RS and ferromagnetic ZB structures were introduced as metastable structures. It was found that ZB TiBi is a half-metallic (HM) ferromagnet with a minority band gap of about 1.43 eV. The origin of half-metallicity was also discussed. The obtained phase diagram showed more stability of the Bi (001) terminated surface compared with the Ti (001) termination. The Ti (001) termination keeps HM property, while half-metallicity was destroyed at Bi (001) termination. The ZB TiBi/InSb (001) interface revealed HM property showing that InSb semiconductor is a suitable substrate for growing ZB TiBi in spintronics.

  16. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    NASA Astrophysics Data System (ADS)

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

    2016-05-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  17. High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

    NASA Astrophysics Data System (ADS)

    Nesher, O.; Pivnik, I.; Ilan, E.; Calalhorra, Z.; Koifman, A.; Vaserman, I.; Oiknine Schlesinger, J.; Gazit, R.; Hirsh, I.

    2009-05-01

    Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), which are currently used in many applications worldwide. SCD's production line includes many different types of InSb FPA with formats of 320x256, 480x384 and 640x512 elements and with pitch sizes in the range of 15 to 30 μm. All these FPAs are available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA) with either closed-cycle Sterling or open-loop Joule-Thomson coolers. With an increasing need for higher resolution, SCD has recently developed a new large format 2-D InSb detector with 1280x1024 elements and a pixel size of 15μm. The InSb 15μm pixel technology has already been proven at SCD with the "Pelican" detector (640x512 elements), which was introduced at the Orlando conference in 2006. A new signal processor was developed at SCD for use in this mega-pixel detector. This Readout Integrated Circuit (ROIC) is designed for, and manufactured with, 0.18 μm CMOS technology. The migration from 0.5 to 0.18 μm CMOS technology supports SCD's roadmap for the reduction of pixel size and power consumption and is in line with the increasing demand for improved performance and on-chip functionality. Consequently, the new ROIC maintains the same level of performance and functionality with a 15 μm pitch, as exists in our 20 μm-pitch ROICs based on 0.5μm CMOS technology. Similar to Sebastian (SCD ROIC with A/D on chip), this signal processor also includes A/D converters on the chip and demonstrates the same level of performance, but with reduced power consumption. The pixel readout rate has been increased up to 160 MHz in order to support a high frame rate, resulting in 120 Hz operation with a window of 1024×1024 elements at ~130 mW. These A/D converters on chip save the need for using 16 A/D channels on board (in the case of an analog ROIC) which would operate at 10 MHz and consume about 8Watts A Dewar has been

  18. Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    SciTech Connect

    Tuominen, M. E-mail: pekka.laukkanen@utu.fi; Lång, J.; Dahl, J.; Yasir, M.; Mäkelä, J.; Punkkinen, M. P. J.; Laukkanen, P. E-mail: pekka.laukkanen@utu.fi; Kokko, K.; Kuzmin, M.; Osiecki, J. R.; Schulte, K.

    2015-01-05

    The pre-oxidized crystalline (3×1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3×1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3×1)-O consists of In atoms with unexpected negative (between −0.64 and −0.47 eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.

  19. Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

    NASA Astrophysics Data System (ADS)

    Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.; Liu, X.; Furdyna, J.; Khodaparast, G. A.

    2016-01-01

    In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.

  20. Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

    SciTech Connect

    Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.; Liu, X.; Furdyna, J.; Khodaparast, G. A.

    2016-01-14

    In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.

  1. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In{sub x}Al{sub 1−x}Sb continuously graded buffer

    SciTech Connect

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-10-15

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm{sup 2}/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  2. Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Chen, Y. C.; Bhattacharya, P. K.; Tsukamoto, S.

    1989-01-01

    Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

  3. STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

    2012-02-01

    The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

  4. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S.; Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  5. Metal-like heat conduction in laser-excited InSb probed by picosecond time-resolved x-ray diffraction

    NASA Astrophysics Data System (ADS)

    Sondhauss, P.; Synnergren, O.; Hansen, T. N.; Canton, S. E.; Enquist, H.; Srivastava, A.; Larsson, J.

    2008-09-01

    A semiconductor (InSb) showed transient metal-like heat conduction after excitation of a dense electron-hole plasma via short and intense light pulses. A related ultrafast strain relaxation was detected using picosecond time-resolved x-ray diffraction. The deduced heat conduction was, by a factor of 30, larger than the lattice contribution. The anomalously high heat conduction can be explained once the contribution from the degenerate photocarrier plasma is taken into account. The magnitude of the effect could provide the means for guiding heat in semiconductor nanostructures. In the course of this work, a quantitative model for the carrier dynamics in laser-irradiated semiconductors has been developed, which does not rely on any adjustable parameters or ad hoc assumptions. The model includes various light absorption processes (interband, free carrier, two photon, and dynamical Burstein-Moss shifts), ambipolar diffusion, energy transport (heat and chemical potential), electrothermal effects, Auger recombination, collisional excitation, and scattering (elastic and inelastic). The model accounts for arbitrary degrees of degeneracy.

  6. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  7. Effect of Rashba spin-orbit coupling on the electronic, thermodynamic, magnetic and transport properties of GaAs, InAs and InSb quantum dots with Gaussian confinement

    NASA Astrophysics Data System (ADS)

    Boda, Aalu; Boyacioglu, Bahadir; Erkaslan, Ugur; Chatterjee, Ashok

    2016-10-01

    The effect of Rashba spin-orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin-orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots.

  8. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    PubMed

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  9. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

    NASA Astrophysics Data System (ADS)

    Gmitra, Martin; Fabian, Jaroslav

    2016-10-01

    We employ first-principles techniques tailored to properly describe semiconductors (semilocal exchange potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at the zone center, by fitting the spin splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms—third-order polynomials. We also determine the orientations of the spin-orbit vector fields (for conduction bands) and the average spins (valence bands) in the momentum space. We describe the dependence of the spin-orbit parameters on the cation and anion atomic weights. These results should be useful for spin transport, spin relaxation, and spin optical orientation modeling of semiconductor heterostructures, as well as for realistic studies of semiconductor-based Majorana nanowires, for which accurate values of spin-orbit couplings are needed.

  10. Gapped superconductivity with all symmetries in InSb (110) quantum wells in proximity to s -wave superconductor in Fulde-Ferrell-Larkin-Ovchinnikov phase or with a supercurrent

    NASA Astrophysics Data System (ADS)

    Yang, F.; Wu, M. W.

    2017-02-01

    We show that all the singlet even-frequency, singlet odd-frequency, triplet even-frequency, and triplet odd-frequency pairings, together with the corresponding order parameters (gaps), can be realized in InSb (110) spin-orbit-coupled quantum well in proximity to s -wave superconductor in Fulde-Ferrell-Larkin-Ovchinnikov phase or with a supercurrent. It is revealed that with the singlet even-frequency order parameter induced by the proximity effect, triplet even-frequency pairing is induced due to the broken spin-rotational symmetry by the spin-orbit coupling. Since the translational symmetry is broken by the center-of-mass momentum of Cooper pair in Fulde-Ferrell-Larkin-Ovchinnikov phase or with a supercurrent, the singlet odd-frequency pairing can be induced. With the translational and spin-rotational asymmetries, the triplet odd-frequency pairing is also realized. Then, we show that the corresponding order parameters can be obtained from the self-energy of the electron-electron Coulomb interaction with the dynamic screening. The singlet and the induced triplet even-frequency order parameters are found to exhibit the conventional s - and p -wave characters in the momentum space, respectively. Whereas for the induced odd-frequency order parameters in quantum well, the singlet and triplet ones show the p - and d -wave characters, respectively. Moreover, the p -wave character of the singlet odd-frequency order parameter exhibits anisotropy with respect to the direction of the center-of-mass momentum. While for the triplet one, we find that dx2- and dx y-wave characters can be obtained with respect to the direction of the center-of-mass momentum. We show that at proper density, the singlet even-frequency order parameter is suppressed and the induced singlet odd-frequency, triplet even-frequency, and triplet odd-frequency ones can be detected experimentally.

  11. 78 FR 32387 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-30

    ... 4010, FR 4011, FR 4012, FR 4017, FR 4019, or FR 4023 by any of the following methods: Agency Web Site... curing the deficiencies and to execute a formal cure agreement with the Federal Reserve.\\5\\ \\4\\ 12...

  12. 78 FR 79481 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... actions in response to violations of Commission APOs and the 24-hour rule. See 56 FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997); 63 FR 25064 (May 6,...

  13. 75 FR 12564 - Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-16

    ... Hollywood Animals, Inc... 74 FR 47821; September January 15, 2010 17, 2009. 060472 Hollywood Animals, Inc... 74 FR 47821; September January 15, 2010 17, 2009. 060473 Hollywood Animals, Inc... 74 FR...

  14. Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-01-01

    Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure of Bi containing alloys such as InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix due to the incorporation of dilute concentrations of bismuth. The coupling parameter CBi which gives the magnitude of interaction of Bi impurity states with the LH, HH and SO sub bands in VBAC depends on the increase in the HH/LH related energy level EHH/LH+, location of the Bi related impurity level EBi and valence band offset ΔEVBM between the endpoint compounds in the corresponding III-V-Bi. The reduction in band gap as well as the enhancement of the spin-orbit splitting energy is well explained using this model and the calculated results are compared with the results of Virtual Crystal Approximation (VCA) and Density Functional Theory (DFT) calculations, as well as with the available experimental data and are found to have good agreement. The incorporation of Bi mainly perturbs the valence band due to the interaction of the Bi impurity states with the HH, LH and SO bands. The lowering of the conduction band minimum (CBM) due to VCA is added with the upward movement of the HH/LH bands to get the total reduction in band gap for the bismides. The valence band shifts of 31.9, 32.5, 20.8 and 12.4 meV/at%Bi for InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix respectively constitute 65, 76, 59 and 31% of the total band gap reduction and the rest is the contribution of the conduction band shift. The spin-orbit splitting energy also shows significant increase with the maximum change in InPBi and the minimum in InSbBi. The same is true for Ga containing bismides if we make a comparison with the available values for GaAsBi and GaPBi with that of GaSbBi. It has also been observed that the increase in splitting energy is greater in case of the bismides such as InAsBi, InPBi and GaAsBi than the bismides such as InSbBi and GaSbBi with the parent substrates having higher values of splitting energy. This may

  15. 77 FR 49024 - Sai Wentum, M.D.; Decision and Order

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-15

    ..., 71 FR 39130, 39131 (2006); Dominick A. Ricci, 58 FR 51104, 51105 (1993); Bobby Watts, 53 FR 11919... practitioner has lost his state authority to dispense controlled substances. James L. Hooper, 76 FR...

  16. Cross Sections: No. 1 Hold section at Fr 24 Looking ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Cross Sections: No. 1 Hold section at Fr 24 Looking Fwd, No 1 Hold Section at Fr 28 Looking Aft, No 2 Hold Section at Fr 48 Looking Aft, No 3 Hold Section at Fr 70 Looking Aft, No 4 Hold Section at Fr 90 Looking Aft - General John Pope, Suisun Bay Reserve Fleet, Benicia, Solano County, CA

  17. 78 FR 75346 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-11

    ... respondents: FR Y-11 (quarterly): 409; FR Y-11 (annual): 203; FR Y-11S: 255. General description of report... (quarterly): 551; FR 2314 (annual): 220; FR 2314S: 308. General description of report: This information... comment period, the proposed information collections, along with an analysis of comments...

  18. 78 FR 27984 - Modification of the National Customs Automation Program Test (NCAP) Regarding Reconciliation for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-13

    ... announced and explained the test in a general notice document published in the Federal Register (63 FR 6257... Register notices: 63 FR 44303, published on August 18, 1998; 64 FR 39187, published on July 21, 1999; 64 FR 73121, published on December 29, 1999; 66 FR 14619, published on March 13, 2001; 67 FR 61200,...

  19. 77 FR 71592 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-03

    ... Investments Held for an Extended Period. Agency form number: FR Y-12, FR Y12A, respectively. OMB control number: 7100-0300. Frequency: FR Y-12: quarterly or semi-annually, FR Y-12A: annually. Reporters: Bank...). Estimated annual reporting hours: FR Y-12: 2,112 hours, FR Y-12A: 126 hours. Estimated average hours...

  20. 75 FR 47540 - Extension of the Award Period for Certain Minority Business Enterprise Centers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-06

    ... Beach MSA. Mississippi MBEC Arkansas Regional State of Mississippi.... 71 FR 42351, as amended by 71 FR.../ 71 FR 42351, as amended by 74 FR 58246. Arlington MSA. El Paso MBEC El Paso Hispanic Chamber El Paso MSA 72 FR 71621, as amended by 74 FR 58246. of Commerce. New Mexico MBEC NEDA Business State of...

  1. 78 FR 76789 - Additional Connect America Fund Phase II Issues

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-19

    ... Support Disbursements. In the USF/ICC Transformation Order, 76 FR 73830, November 29, 2011, the Commission... Transformation Order and FNPRM, 76 FR 73830, November 29, 2011 and 76 FR 78384, December 16, 2011, included...

  2. Hydrostatic pressure induced localization effects in InSb

    NASA Astrophysics Data System (ADS)

    Kadri, A.; Zitouni, K.; Aulombard, R. L.

    1986-05-01

    Magnetoresistance and Hall coefficient measurements were made as a function of free carrier concentration, pressure, temperature and magnetic field in samples of n-InSb with initial n in the range 2.1 × 10 13-1.4 × 10 14 cm -3. The free carrier concentrations could be controlled down to n « 10 11cm-3 both by using the metastable properties of the lattice coupled defects and by keeping the pressure at low temperatures. The results show clear evidence for the interplay between the correlation and the localization effects at the metal-insulator transition.

  3. Detached Solidification of InSb on Earth

    NASA Technical Reports Server (NTRS)

    Wang, Jianbin; Regel, Liya L.; Wilcox, William R.

    2003-01-01

    Detached solidification of lightly gallium-doped indium antimonide was achieved in the laboratory only when the ampoule was coated with hexagonal boron nitride and when the material appeared to be oxide-free. A furnace was constructed with the temperature increasing with height in order to minimize bouyancy-driven convection, so as to maximize transport of segregated dissolved gases into the gap between the growing solid and the ampoule wall. There appeared to be no difference in results with freezing rates of 5 mmh and 10 mm/h. Best results were obtained when the ampoule was backfilled with 20 kPa of Ar-10%H2 prior to sealing. The detached portions were depressed by several pm from adjacent attached regions, were rough, and sometimes had microfacets and steps.

  4. 78 FR 79412 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... Maintaining Records About Individuals,'' dated February 8, 1996 (February 20, 1996, 61 FR 6427). Dated... 13, 2007, 72 FR 32630) Changes: * * * * * Categories of individuals covered by the system:...

  5. 78 FR 16894 - In the Matter of Luminant Generation Company LLC, Comanche Peak Nuclear Power Plant, Units 1 and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-19

    ... notice that was published in the Federal Register (FR) on March 5, 2013 (78 FR 14361), regarding the....Bladey@nrc.gov . Correction In the FR of March 5, 2013, in FR Doc. 2013-05021, on page 14362,...

  6. 76 FR 68127 - Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-03

    ...] [FR Doc No: 2011-28540] ARCHITECTURAL AND TRANSPORTATION BARRIERS COMPLIANCE BOARD Meetings AGENCY: Architectural and Transportation Barriers Compliance Board. ACTION: Notice of meetings. SUMMARY: The Architectural and Transportation Barriers Compliance Board (Access Board) plans to hold its regular...

  7. 75 FR 2560 - Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-15

    .... 217648 U.S. Fish and Wildlife 74 FR 37240, July 28, December 8, 2009 Service. 2009. 222610 Atlanta-Fulton.... Pylman....... 74 FR 58977; November December 23, 2009 16, 2009. 231522 Robert B. Spencer...... 74...

  8. 75 FR 21963

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Title Identifier Number Number 432 Rule 15c2-2: Confirmation of Transactions in Open-End Management... Education Savings 433 Rule 15c2-3: Point-of-Sale Disclosure of Purchases in Open-End Management Investment... NPRM 07/17/09 74 FR 35076 NPRM Comment Period End 09/15/09 Final Action 12/23/09 74 FR 68334 ]...

  9. 77 FR 58556 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-21

    ... by FR Y-12 or FR Y-12A, by any of the following methods: Agency Web Site: http://www.federalreserve... viewed electronically or in paper form in Room MP- 500 of the Board's Martin Building (20th and C Streets... Investments Held for an Extended Period. Agency form number: FR Y-12, FR Y12A, respectively. OMB...

  10. 78 FR 54481 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-04

    .......... 78 FR 37563; June 21, 2013...... August 8, 2013. 08815B William Tones 78 FR 37562; June 21, 2013...... August 8, 2013. 09161B John Alexander......... 78 FR 40762; July 8, 2013....... August 9, 2013. 99464A Donald Lepp 78 FR 19732; April 2, 2013...... June 7, 2013. Marine Mammals Receipt of application...

  11. 76 FR 44353 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-25

    ... Permit No. Applicant Federal date Register notice 28080A St. John Fisher 76 FR 12990; June 16, 2011. College. March 9, 2011. 38879A Scott Ackleson.. 76 FR 27660; June 17, 2011. May 12, 2011. 44242A Larry Hildreth.. 76 FR 32223; July 05, 2011. June 3, 2011. 43070A Keith Jefferson. 76 FR 32223; July 12,...

  12. 76 FR 18536 - Agency Information Collection Activities Under OMB Review

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... soliciting comments on this collection of information was published on January 11, 2011. 76 FR 1603. \\2... FR 1603, 1604. \\5\\ See CFTC NPRM: End-User Exception to Mandatory Clearing of Swaps, 75 FR 80747... FR 1603, 1604. The estimated average hourly burden was estimated at .5 hours. Burden Statement:...

  13. 78 FR 48712 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-09

    ... 78 FR 9725; February 11, June 14, 2013. the University of 2013. Illinois. 675484 Birmingham Zoo, Inc..... 78 FR 16292; March 14, May 1, 2013. 2013. 036218 Brevard Zoo 78 FR 1771; March 22, May 1, 2013. 2013. 682781 Chicago Zoological 78 FR 1771; March 22, May 1, 2013. Society. 2013. 808265 Gary Johnson 78...

  14. 77 FR 3514 - Protection Against Turbine Missiles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-24

    ... [Federal Register Volume 77, Number 15 (Tuesday, January 24, 2012)] [Notices] [Page 3514] [FR Doc..., 2009 (74 FR 56672) for a 60 day public comment period. DG-1217 was reissued for public comment on May 6, 2011 (76 FR 26320). The public comment period closed on June 3, 2011. The staff's responses to...

  15. 76 FR 73496 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-29

    ...., Monday through Friday, except Federal holidays. The AD docket contains the NPRM (76 FR 42602, July 19... the fasteners installation in the junction keel beam fitting at FR 40, in accordance with Airbus... installation in the junction keel beam fitting at FR 40, in accordance with Airbus Service Bulletin...

  16. 78 FR 79292 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... corresponds to FAA AD 2007-14-01, Amendment 39-15123, (72 FR 38006, July 12, 2007)] to require compliance with... 2007-14-01, Amendment 39-15123, (72 FR 38006, July 12, 2007)] to require compliance with FAL specified... also adds new airplanes to the applicability of this AD. AD 2011-24-09 (76 FR 73486, November 29,...

  17. 77 FR 24409 - Medicare and Medicaid Programs: Hospital Outpatient Prospective Payment; Ambulatory Surgical...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-24

    ... INFORMATION CONTACT: Erick Chuang, (410) 786-1816. SUPPLEMENTARY INFORMATION: I. Regulatory Overview In FR Doc. 2011-26812 of November 30, 2011 (76 FR 74122) and FR Doc. 2011-33751 of January 4, 2012 (77 FR 217... for payment in the claims year but did not meet the Medicare requirements for payment (76 FR...

  18. 75 FR 52376 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-25

    ... [Federal Register Volume 75, Number 164 (Wednesday, August 25, 2010)] [Notices] [Pages 52376-52377] [FR Doc No: 2010-21069] OFFICE OF PERSONNEL MANAGEMENT Excepted Service AGENCY: U.S. Office of.... 218. John Berry, Director, U.S. Office of Personnel Management. [FR Doc. 2010-21069 Filed 8-24-10;...

  19. 75 FR 38061 - Airworthiness Directives; Airbus Model A300 B4-600 Series Airplanes; Model A300 B4-600R Series...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-01

    ... reinforcement of the junction of frame bases at FR48, FR49 and FR51 to FR53 is necessary to enable the aircraft... (42 500 FC ), it has been concluded that a reinforcement of the junction of frame bases at FR48, FR49... above, this AD requires the reinforcement of the affected junction of frame bases. Required...

  20. 75 FR 61975 - Airworthiness Directives; Airbus Model A300 B4-600 Series Airplanes, Model A300 B4-600R Series...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-07

    ... a reinforcement of the junction of frame bases at FR48, FR49 and FR51 to FR53 is necessary to enable... (42,500 FC ), it has been concluded that a reinforcement of the junction of frame bases at FR48, FR49... above, this AD requires the reinforcement of the affected junction of frame bases. Required...

  1. 77 FR 28243 - Amendment of Class D Airspace; Cocoa Beach, FL

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-14

    .... FAA-2012-0099, Airspace Docket No. 12- ASO-11, published on April 11, 2012 (77 FR 21662), amends Class... Beach, FL, as published in the Federal Register of April 11, 2012 (77 FR 21662) (FR Doc. 2012-8558)...

  2. 75 FR 14441 - General Services Administration; Office of Governmentwide Policy; Submission for Review; Tangible...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... Register at 72 FR 64648, November 16, 2007 and 73 FR 67175, November 13, 2008. Comments were received... over specific reporting requirements in the provisions of existing awards. The response in 73 FR...

  3. 76 FR 58269 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-20

    ... procedures prescribed in 5 CFR 1320.12. On May 9, 2011 (76 FR 26900), EPA sought comments on this ICR... Manufacturing were proposed on October 4, 2001 (66 FR 50768), and promulgated on October 18, 2002 (67 FR...

  4. 75 FR 53366 - Self-Regulatory Organizations; BATS Exchange, Inc.; Chicago Board Options Exchange, Incorporated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-31

    ... Nos. 62251 (June 10, 2010), 75 FR 34183 (June 16, 2010); 62252 (June 10, 2010), 75 FR 34186 (June 16... FR 51138 (August 18, 2010). The Commission finds it appropriate to designate a longer period...

  5. 76 FR 58300 - Affirmative Decisions on Petitions for Modification Granted in Whole or in Part

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-20

    ... Affected: 30 CFR 75.1700 (Oil and gas wells). Docket Number: M-2009-005-C. FR Notice: 74 FR 23747 (May 20... CFR 75.1700 (Oil and gas wells). Docket Number: M-2009-006-C. FR Notice: 74 FR 23748 (May 20, 2009.... Regulation Affected: 30 CFR 75.1700 (Oil and gas wells). Docket Number: M-2009-039-C. FR Notice: 74 FR...

  6. Quadrupole moments of high spin isomers in sup 213 Fr, sup 212 Fr, and sup 211 Fr

    SciTech Connect

    Hardeman, F.; Neyens, G.; Scheveneels, G.; Nouwen, R.; S'heeren, G.; Van Den Bergh, M.; Coussement, R. ); Byrne, A.P.; Muesseler, R.; Huebel, H.; Baldsiefen, G. )

    1991-02-01

    The level mixing spectroscopy method has been applied to measure the static quadrupole moments of six isomeric states in {sup 213}Fr, {sup 212}Fr, and {sup 211}Fr ({ital Z}=87). For isomers with the proton configuration {pi}{ital h}{sub 9/2}{sup 4}{ital i}{sub 13/2} a large increase of the quadrupole moment was observed with the removal of neutrons from the closed {ital N}=126 core: {ital Q}(29/2{sup +},{sup 213}Fr)={minus}70(7) {ital e} fm{sup 2}, {ital Q}(15{sup {minus}},{sup 212}Fr)={minus}80(12) {ital e} fm{sup 2}, and {ital Q}(29/2{sup +},{sup 211}Fr)={minus}107(18) {ital e} fm{sup 2}. Quadrupole moments for very high spin states were also measured: {ital Q}(65/2{sup {minus}},{sup 213}Fr)={minus}219(53) {ital e} fm{sup 2}, {ital Q}(27{sup {minus}},{sup 212}Fr)={minus}152(31) {ital e} fm{sup 2}, and {ital Q}(45/2{sup {minus}},{sup 211}Fr) ={minus}198(56) {ital e} fm{sup 2}. The observed values are in good agreement with shell-model calculations, but are lower than that predicted using the deformed-independent particle model. The implantation behavior of Fr in a Tl host is also discussed.

  7. 78 FR 68042 - Petition for Waiver and Notice of Granting the Application for Interim Waiver of Indesit Company...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-13

    ..., 2011, DOE published a test procedure final rule (76 FR 1032) to include provisions for testing ventless... waivers for the same type of clothes dryer to Bosch (BSH) (76 FR 33271, June 8, 2011), Miele Appliance, Inc. (Miele) (60 FR 9330, February 17, 1995; 76 FR 17637, March 30, 2011), LG Electronics (73 FR...

  8. 78 FR 79333 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    .... Discussion On June 9, 2000, we issued AD 2000-12-12, Amendment 39-11790 (65 FR 39072, June 23, 2000). That AD... superseded AD 95-10-03, Amendment 39-9220 (60 FR 25604, May 12, 1995). Since we issued AD 2000-12-12, Amendment 39-11790 (65 FR 39072, June 23, 2000), The European Aviation Safety Agency (EASA), which is...

  9. 78 FR 79283 - Community Reinvestment Act Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... CRA purposes by the OCC, Board, and FDIC on August 2, 2005, effective September 1, 2005. 70 FR 44256... Act (HMDA). 70 FR 12148 (Mar. 11, 2005). See 12 U.S.C. 2808; 12 CFR 203.2(e)(1). On March 22, 2007... other federal banking agencies in its CRA rule previously set forth at 12 CFR 563e. 72 FR 13429 (Mar....

  10. 76 FR 61342 - Foreign-Trade Zone 72 Temporary/Interim Manufacturing Authority Brevini Wind USA, Inc., (Wind...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-04

    ... Board Orders 1347 (69 FR 52857, 8/30/04) and 1480 (71 FR 55422, 9/22/06), including notice in the Federal Register inviting public comment (76 FR 43260, 7/20/2011). The FTZ staff examiner reviewed...

  11. 77 FR 34935 - Foreign-Trade Zone 161; Temporary/Interim Manufacturing Authority; Siemens Energy, Inc., (Wind...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-12

    ... with T/IM procedures, as authorized by FTZ Board Orders 1347 (69 FR 52857, 8/30/04) and 1480 (71 FR 55422, 9/22/06), including notice in the Federal Register inviting public comment (77 FR 20782,...

  12. 76 FR 29279 - Calvert Cliffs 3 Nuclear Project, LLC and Unistar Nuclear Operating Services, LLC; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-20

    ... the Federal Register on April 21, 2010 (76 FR 20867), and by the U.S. Environmental Protection Agency on April 26, 2010 and April 30, 2010 (76 FR 21625 and 76 FR 22778). The purpose of this notice is...

  13. 75 FR 62111 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-07

    ..., 1993; 58 FR 10562). KPAC.01, Classified Container Information Form DA 727 (February 22, 1993; 58 FR 10562). KDCE.03, DA Form 727 Classified Container Information File 503-02 (February 22, 1993; 58...

  14. 77 FR 19313 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-30

    ... endangered species, we found that (1) The application was filed in good faith, (2) The granted permit would... Richmond 77 FR 3493: March 15, 2012. Zoo. January 24, 2012. 694126 National 76 FR 80384; March 15,...

  15. 77 FR 34943 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-12

    ...-01) The Graduate Fellowship Programs Participants Study, 70 FR 51348-51351 (August 30, 2005). 2. (18... Graduate Fellowship Programs Participants Study, 70 FR 51348- 51351 (August 30, 2005). 18-17-02 Follow...

  16. 77 FR 47787 - Additional Requirements for Charitable Hospitals; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ...) that was published in the Federal Register on Tuesday, June 26, 2012 (77 FR 38148). The proposed... subject of FR Doc. 2012-15537, is corrected as follows: 1. On page 38153, in the preamble, column 1,...

  17. 78 FR 37565 - Endangered Species; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-21

    ..., 2012. 91700A Reptile Wrangler LLC... 77 FR 74506; December January 17, 2013. 14, 2012. 89184A Cinco... 12777; February April 11, 2013. 25, 2013. 034669 Randar's Reptiles...... 78 FR 12777; February April...

  18. Evaluation of Coatings for FR-4 Fiberglass Epoxy Composite Probes

    DTIC Science & Technology

    2014-01-01

    The probe is fabricated from a composite material ( FR -4) composed of woven fiberglass cloth with a flame-resistant epoxy resin binder. FR -4 is a...Evaluation of Coatings for FR -4 Fiberglass Epoxy Composite Probes by Faye R. Toulan, David P. Flanagan, John J. La Scala, and Daniel M. De...5069 ARL-TR-6771 January 2014 Evaluation of Coatings for FR -4 Fiberglass Epoxy Composite Probes Faye R. Toulan Dynamic Science, Inc

  19. 78 FR 40225 - Self-Regulatory Organizations; EDGX Exchange, Inc.; Order Approving a Proposed Rule Change...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-03

    ..., 75 FR at 13165- 13166. \\15\\ See Notice, 78 FR at 31995. The Exchange shall enter into a plan pursuant...\\ \\17\\ See Notice, 78 FR at 31995. \\18\\ See id. In the past, the Commission has expressed concern that... 13165; and Notice, 78 FR at 31995. IV. Conclusion It is therefore ordered, pursuant to Section...

  20. 78 FR 2304 - Self-Regulatory Organizations; Chicago Board Options Exchange, Incorporated; Order Approving a...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-10

    ... (November 19, 2012), 77 FR 70511 (November 26, 2012) (SR-CBOE-2012-109) (``Notice''). II. Description of the... corresponding order to the other trading center. \\4\\ See Notice, 77 FR at 70511. \\5\\ See Notice, 77 FR at 70511..., 77 FR at 70512. For examples of some of the circumstances in which the Exchange may decide to...

  1. 75 FR 69653 - Energy Conservation Program for Consumer Products: Decision and Order Granting a Waiver to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-15

    ...] [FR Doc No: 2010-28646] DEPARTMENT OF ENERGY Office of Energy Efficiency and Renewable Energy [Case No... 22, 2006. 71 FR 48913. DOE received one comment on the Whirlpool petition, from a private citizen who... Samsung's interim waivers on September 16, 2010. (75 FR 57915; 75 FR 57937). Table 5.1 of Appendix...

  2. 75 FR 10168 - Information on Foreign Chain of Distribution for Ephedrine, Pseudoephedrine, and Phenylpropanolamine

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-05

    ... List I Chemicals'' [Docket No. DEA-293, RIN 1117- AB08] (72 FR 37439, July 10, 2007; 73 FR 73549... 10168-10172] [FR Doc No: 2010-4716] DEPARTMENT OF JUSTICE Drug Enforcement Administration 21 CFR Part... Proposed Rulemaking published in the Federal Register on March 31, 2008 (73 FR 16793). The...

  3. 78 FR 69612 - Negotiated Rulemaking Committee, Negotiator Nominations and Schedule of Committee Meetings-Title...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-20

    ... Federal Register (77 FR 25658) announcing our intent to establish a negotiated rulemaking committee under... in the Federal Register (78 FR 22467), which we corrected on April 30, 2013 (78 FR 25235), announcing... the Federal Register (78 FR 27880) the addition of a fourth hearing. The hearings were held on May...

  4. 78 FR 79619 - Patient Protection and Affordable Care Act; Program Integrity: Exchange, Premium Stabilization...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 79619-79620] [FR Doc No: 2013-31319] DEPARTMENT OF HEALTH AND HUMAN SERVICES 45 CFR Part 155 [CMS.... Background In FR Doc. 2013-25326 of October 30, 2013 (78 FR 65046), final rule entitled ``Patient Protection... Standards; Amendments to the HHS Notice of Benefit and Payment Parameters for 2014 (78 FR 65046), there...

  5. 77 FR 54942 - Self-Regulatory Organizations; Boston Stock Exchange Clearing Corporation; NASDAQ OMX BX, Inc...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-06

    ... Nos. 67293 (June 28, 2012), 77 FR 39751 (July 5, 2012) (SR-NASDAQ-2012-072) (the ``NASDAQ Notice''); 67433 (July 13, 2012), 77 FR 42522 (July 19, 2012) (SR- BX-2012-052); 67434 (July 13, 2012), 77 FR 42524 (July 19, 2012) (SR-Phlx-2012-95); 67487 (July 23, 2012), 77 FR 44301 (July 27, 2012)...

  6. 76 FR 34633 - Medicare Program; Proposed Changes to the Hospital Inpatient Prospective Payment Systems for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-14

    .... SUPPLEMENTARY INFORMATION: I. Background In FR Doc. 2011-9644 of May 5, 2011 (76 FR 25788), there were a number...InpatientPPS/01_overview.asp ). III. Correction of Errors In FR Doc. 2011-9644 of May 5, 2011 (76 FR...

  7. 78 FR 39730 - Medicare Program; Notification of Closure of Teaching Hospitals and Opportunity To Apply for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-02

    ... INFORMATION CONTACT: Miechal Lefkowitz, (212)-616-2517. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. 2013-12952 of May 31, 2013 (78 FR 32663), there was a typographical error that is identified and.... Correction of Errors In FR Doc. 2013-12952 of May 31, 2013 (78 FR 32663), make the following corrections:...

  8. 75 FR 57849 - Maintenance of Incombustible Content of Rock Dust in Underground Coal Mines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-23

    ...- Hands-on training for miners in the use of self-contained self-rescue (SCSR) devices (52 FR 24373, June 30, 1987); Training and mine evacuation procedures for underground coal mines (67 FR 76658, Dec. 12... emergency evacuations (71 FR 12252, Mar. 9, 2006); and Sealing of abandoned areas (72 FR 28797, May 22,...

  9. 78 FR 19164 - Amendments to Compliance Certification Content Requirements for State and Federal Operating...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-29

    ... and 71 due to an editing error. This error occurred in a June 27, 2003, final rule (68 FR 38517... was originally promulgated on July 21, 1992 (57 FR 32250), and the part 71 rule on July 1, 1996 (61 FR... requirements of parts 70 and 71 in the context of a CAM rulemaking on October 22, 1997 (62 FR 54899). The...

  10. 78 FR 26255 - Approval and Promulgation of Air Quality Implementation Plans; Texas; Approval of Texas Low...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-06

    ... Texas Low Emission Diesel (TxLED) fuel program was initially approved by EPA on November 14, 2001 (66 FR 57196). It was revised on April 6, 2005 (70 FR 17321), October 6, 2005 (70 FR 58325), and October 24, 2008 (73 FR 63378). The TxLED fuel is similar to CARB (California Air Resources Board) diesel and...

  11. 78 FR 38970 - California State Nonroad Engine Pollution Control Standards; Within-the-Scope Determination for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-28

    ... Act, or are not subject to CAA preemption. \\1\\ 74 FR 3030 (January 16, 2009). \\2\\ California Air... opportunity for public hearing and comment on CARB's request. \\11\\ 78 FR 721 (January 4, 2013). Although CARB... new locomotives or new engines used in locomotives. \\14\\ 59 FR 36969 (July 20, 1994). \\15\\ 62 FR...

  12. 7 CFR 29.3068 - Tannish-red color (FR).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 2 2012-01-01 2012-01-01 false Tannish-red color (FR). 29.3068 Section 29.3068 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Type 93) § 29.3068 Tannish-red color (FR). A light red shaded toward tan. [24 FR 8771, Oct. 29,...

  13. 7 CFR 29.3068 - Tannish-red color (FR).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 2 2011-01-01 2011-01-01 false Tannish-red color (FR). 29.3068 Section 29.3068 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Type 93) § 29.3068 Tannish-red color (FR). A light red shaded toward tan. [24 FR 8771, Oct. 29,...

  14. 78 FR 62648 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-22

    .... Applicant Federal Register notice Permit issuance date Endangered Species 10814B Larry Bell 78 FR 45954; July 30, September 12, 2013. 2013. 13216B Anthony Gaglio 78 FR 50083; August 16, September 25, 2013. 2013. 13270B Shane Erving 78 FR 50083; August 16, September 25, 2013. 2013. Marine Mammals 056326...

  15. 78 FR 14819 - Endangered Species; Marine Mammal; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-07

    ... application Permit No. Applicant Federal Register notice Permit issuance date 88568A The Living Desert 77 FR 66476; November 5, February 12, 2013. 2012. 77706A LBMI, L.P. doing business 77 FR 72882; December 6, February 19, 2013. as El Coyote Ranch. 2012. 75897A American Museum of Natural 77 FR 72882; December...

  16. 76 FR 35966 - Amendment of Class E Airspace; Cocoa, FL

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-21

    ... Merritt Island Airport, Cocoa, FL (75 FR 21266) Docket No. FAA-2011-0070. Interested parties were invited... Executive Order 12866; (2) is not a ``significant rule'' under DOT Regulatory Policies and Procedures (44 FR..., 40113, 40120; E.O. 10854, 24 FR 9565, 3 CFR, 1959-1963 Comp., p. 389. Sec. 71.1 0 2. The...

  17. 76 FR 53129 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-25

    ...'s functions; including whether the information has practical utility; b. The accuracy of the Federal.... Reporters: FR Y-6: Top-tier domestic BHCs; FR Y-7: FBOs. Estimated annual reporting hours: FR Y-6: 28,796... (12 CFR 211.13(c), 225.5(b)). Individual respondent data are not considered confidential....

  18. Cross Sections: No 6 Hold Section at Fr 178 Looking ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Cross Sections: No 6 Hold Section at Fr 178 Looking Fwd, No 7 Hold Section at No 154 Looking Fwd, No 7 Hold Section at Fr 195 Looking Fwd Showing Trans 194, No 7 Hold Section at Fr 198 Looking Fwd - General John Pope, Suisun Bay Reserve Fleet, Benicia, Solano County, CA

  19. 78 FR 12780 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-25

    ... endangered species, we found that (1) The application was filed in good faith, (2) The granted permit would... Moore 77 FR 66476; January 14, 2013. November 5, 2012. 84872A Palm Beach Zoo at 77FR 66476; November... Islands November 16, 2012. Regional Office. 89103A Dallas Zoo 77FR 68809; November February 12, 2013....

  20. 77 FR 64711 - Airworthiness Directives; The Boeing Company Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-23

    ... Nesemeier, Senior Aerospace Engineer, Systems and Equipment Branch, ANM-130S, FAA, Seattle Aircraft... on the SNPRM (77 FR 31758, May 30, 2012) and the FAA's response to each comment. Support for the SNPRM (77 FR 31758, May 30, 2012) Boeing supports the SNPRM (77 FR 31758, May 30, 2012). Requests To...

  1. 76 FR 4936 - Granular Polytetrafluoroethylene Resin From Italy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-27

    ... on granular PTFE resin from Italy and Japan (75 FR 67082-67083 and 67105-67108, November 1, 2010... correction of the initiation notice on January 12, 2011 (76 FR 2083). On January 13, 2011, Commerce notified... 17, 2011; Responses to the 13 items requested in the Commission's notice of institution (75 FR...

  2. 75 FR 67105 - Granular Polytetrafluoroethylene Resin From Italy and Japan

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-01

    ...), as most recently amended at 74 FR 2847 (January 16, 2009). \\1\\ No response to this request for... granular polytetrafluoroethylene resin from Japan (53 FR 32267). On August 30, 1988, Commerce issued an antidumping duty order on imports of granular polytetrafluoroethylene resin from Italy (53 FR...

  3. 76 FR 72968 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-28

    .... Applicant Federal Register notice Permit issuance date 46259A Jefferey Spivery...... 76 FR 54480; September 1, November 2, 2011. 2011. 52683A Carlos Ramirez........ 76 FR 60862; September 30, November 3, 2011. 2011. 50923A Woolsey Caye 76 FR 60862; September 30, November 3, 2011. 2011. 49805A Graham Banes 76...

  4. 77 FR 37000 - Marine Mammals; File No. 814-1899

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-20

    ... [Federal Register Volume 77, Number 119 (Wednesday, June 20, 2012)] [Notices] [Page 37000] [FR Doc... (No. 814-1899), issued on July 18, 2007 (72 FR 40285), authorized the collection and receipt of parts... Conservation Division, Office of Protected Resources, National Marine Fisheries Service. [FR Doc....

  5. 78 FR 79329 - Airworthiness Directives; Bombardier, Inc. Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... (70 FR 43032, July 26, 2005). That AD required actions intended to address an unsafe condition on the products listed above. Since we issued AD 2005-15-04, Amendment 39-14193 (70 FR 43032, July 26, 2005... that are required by AD 2005-15-04, Amendment 39-14193 (70 FR 43032, July 26, 2005), and retained...

  6. 7 CFR 29.1044 - Orange Red (FR).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 2 2012-01-01 2012-01-01 false Orange Red (FR). 29.1044 Section 29.1044 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1044 Orange Red (FR). A yellowish red. [42 FR 21092, Apr. 25, 1977. Redesignated at 47...

  7. 7 CFR 29.1044 - Orange Red (FR).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 2 2011-01-01 2011-01-01 false Orange Red (FR). 29.1044 Section 29.1044 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1044 Orange Red (FR). A yellowish red. [42 FR 21092, Apr. 25, 1977. Redesignated at 47...

  8. 78 FR 79660 - Enhancing Agricultural Coexistence; Extension of Comment Period

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79660] [FR... on November 4, 2013 (78 FR 65960) is extended. We will consider all comments that we receive on or...: On November 4, 2013, we published in the Federal Register (78 FR 65960-65962, Docket No....

  9. 78 FR 80379 - Federal Acquisition Regulation; Trade Agreements Thresholds

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 80379-80381] [FR Doc No: 2013-31151] DEPARTMENT OF DEFENSE GENERAL SERVICES ADMINISTRATION... (78 FR 76700), the United States Trade Representative published new procurement thresholds. The United... and Remedies (DEC 2013) * * * * * [FR Doc. 2013-31151 Filed 12-30-13; 8:45 am] BILLING CODE 6820-EP-P...

  10. 77 FR 3391 - Changes in Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-24

    ... 3391-3393] [FR Doc No: 2012-1318] DEPARTMENT OF HOMELAND SECURITY Federal Emergency Management Agency... 12866 of September 30, 1993, Regulatory Planning and Review, 58 FR 51735. Executive Order 13132... et seq.; Reorganization Plan No. 3 of 1978, 3 CFR, 1978 Comp., p. 329; E.O. 12127, 44 FR 19367, 3...

  11. 78 FR 52956 - Proposed Flood Hazard Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-27

    ... SECURITY Federal Emergency Management Agency Proposed Flood Hazard Determinations AGENCY: Federal Emergency... Register (78 FR 36220-36222) a proposed flood hazard determination notice that contained an erroneous table... FR 36220. The table provided here represents the proposed flood hazard determinations and...

  12. 75 FR 68755 - Sunshine Act Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-09

    ...] [FR Doc No: 2010-28354] COMMISSION ON CIVIL RIGHTS Sunshine Act Notice AGENCY: United States Commission on Civil Rights. ACTION: Notice of meeting cancellation. SUMMARY: On October 12, 2010 (75 FR 63144-63145), the U.S. Commission on Civil Rights announced a business meeting to be held on Friday,...

  13. 77 FR 37043 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-20

    ... [Federal Register Volume 77, Number 119 (Wednesday, June 20, 2012)] [Notices] [Page 37043] [FR Doc No: 2012-15232] FEDERAL ELECTION COMMISSION Sunshine Act Meeting AGENCY: Federal Election Commission. FEDERAL REGISTER CITATION OF PREVIOUS ANNOUNCMENT: 77 FR 36275 (June 18, 2012). DATE AND TIME:...

  14. 77 FR 37043 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-20

    ... [Federal Register Volume 77, Number 119 (Wednesday, June 20, 2012)] [Notices] [Page 37043] [FR Doc No: 2012-15194] FEDERAL ELECTION COMMISSION Sunshine Act Meeting AGENCY: Federal Election Commission. Federal Register Citation of Previous Announcement: 77 FR 35680 (June 14, 2012). DATE AND TIME:...

  15. 78 FR 78769 - Medical Body Area Networks

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-27

    ...), 95.1217(a)(3), 95.1223 and 95.1225 published at 78 FR 55715, September 11, 2012 are effective... First Report and Order, FCC 12-54, published at 78 FR 55715, September 11, 2012. The OMB Control...

  16. 77 FR 3236 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-23

    ... [Federal Register Volume 77, Number 14 (Monday, January 23, 2012)] [Notices] [Pages 3236-3237] [FR Doc No: 2012-1142] DEPARTMENT OF DEFENSE Office of the Secretary [Docket ID: DOD-2012-OS-0004... Officer, Department of Defense. [FR Doc. 2012-1142 Filed 1-20-12; 8:45 am] BILLING CODE 5001-06-P...

  17. 62 FR 65388 - Occupational Exposure to Tuberculosis

    Federal Register 2010, 2011, 2012, 2013, 2014

    1997-12-12

    ... Tuberculosis AGENCY: Occupational Safety and Health Administration (OSHA), Labor ACTION: Proposed rule... tuberculosis (62 FR 54160). An informal public hearing was scheduled for Washington, D.C., and deadlines were... a new standard for occupational exposure to tuberculosis on October 17, 1997 (62 FR 54160)....

  18. 75 FR 51444 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-20

    ..., CT. Contracting Activity: Department of Defense, Defense Contract Management Agency (DCMA), Boston... 10800, 1421 Jefferson Davis Highway, Arlington, Virginia 22202-3259. FOR FURTHER INFORMATION CONTACT... . SUPPLEMENTARY INFORMATION: Additions On 6/4/2010 (75 FR 31768-31769); 6/11/2010 (75 FR 33270-33271); 6/...

  19. 78 FR 79712 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Page 79712] [FR Doc No: 2013-31243] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment Request Upon..., Secretary. [FR Doc. 2013-31243 Filed 12-30-13; 8:45 am] BILLING CODE 8011-01-P...

  20. 78 FR 79714 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Page 79714] [FR Doc No: 2013-31240] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment Request Upon.... [FR Doc. 2013-31240 Filed 12-30-13; 8:45 am] BILLING CODE 8011-01-P...

  1. 78 FR 79712 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Pages 79712-79714] [FR Doc No: 2013-31239] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment..., Secretary. [FR Doc. 2013-31239 Filed 12-30-13; 8:45 am] BILLING CODE 8011-01-P...

  2. 78 FR 79711 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Pages 79711-79712] [FR Doc No: 2013-31241] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment..._Mailbox@sec.gov . Dated: December 24, 2013. Elizabeth M. Murphy, Secretary. [FR Doc. 2013-31241 Filed...

  3. 78 FR 79714 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Pages 79714-79715] [FR Doc No: 2013-31242] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment.... Elizabeth M. Murphy, Secretary. [FR Doc. 2013-31242 Filed 12-30-13; 8:45 am] BILLING CODE 8011-01-P...

  4. 78 FR 79714 - Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Proposed Rules] [Page 79714] [FR Doc No: 2013-31238] SECURITIES AND EXCHANGE COMMISSION Proposed Collection; Comment Request Upon...@sec.gov . Dated: December 24, 2013. Elizabeth M. Murphy, Secretary. [FR Doc. 2013-31238 Filed...

  5. 75 FR 47717 - Content of Periodicals Mail

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-09

    ... Periodicals Mail'' published by the Federal Register on July 20, 2010 (75 FR 41989-41991) is revised to... March 27, 1995, the Postal Service published a final rule in the Federal Register (60 FR 10021-10029... Part 111 Content of Periodicals Mail AGENCY: Postal Service\\TM\\ ACTION: Final rule; revised....

  6. 75 FR 19199 - Airworthiness Directives; Airbus Model A330-200, A330-300, and A340-300 Series Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-14

    ... that in the area between frame (FR) C53.9 and FR C55 RH , the distance between the route 9R of the In... in the area between frame (FR) C53.9 and FR C55 RH , the distance between the route 9R of the In... information (MCAI) states: It was noticed in production that in the area between frame (FR) C53.9 and FR...

  7. 78 FR 55056 - Approval for Manufacturing (Production) Authority; Foreign-Trade Zone 141; Firth Rixson, Inc. d/b...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-09

    ..., filed 4-29-2011); Whereas, notice inviting public comment has been given in the Federal Register (76 FR 25300-25301, 5-4-2011; 77 FR 43572-43573, 7-25- 2012; 78 FR 2658, 1-14-2013; 78 FR 9033, 2-7-2013)...

  8. 77 FR 43048 - Foreign-Trade Zone 8-Toledo, OH; Application for Reorganization and Expansion Under Alternative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-23

    ... Order 92, 38 FR 3015, 1/31/1973); January 11, 1985 (Board Order 277, 50 FR 2702, 1/18/1985); August 19... FR 9613-9614, 2/28/2005); August 23, 2005 (Board Order 1408, 70 FR 51335, 8/30/2005); and, August 5...; Site 5 (167 acres)--Ohio Northern Global Distribution and Business Training Center, 6722 Commodore...

  9. 78 FR 2302 - Self-Regulatory Organizations; C2 Options Exchange, Incorporated; Order Approving a Proposed Rule...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-10

    ... Act Release No. 68260 (November 19, 2012), 77 FR 70496 (November 26, 2012) (SR-C2-2012-038) (``Notice... FR at 70496. \\5\\ See Notice, 77 FR at 70496-97 n.5, n.9, and accompanying text. In its proposal, C2..., routing brokers, or another exchange.\\7\\ \\6\\ See Notice, 77 FR at 70497. For examples of some of...

  10. 78 FR 78720 - Deferral of Compliance Date: Full-Service Intelligent Mail Barcode Requirement To Qualify for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-27

    ... compliance date of the relevant portions of the final rule published April 18, 2013 (78 FR 23137) is delayed... automation prices, previously published on April 18, 2013, in a final rule in the Federal Register (78 FR..., 78 FR 23146-23148. All other requirements that were published in the Federal Register (78 FR...

  11. 78 FR 40043 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Reef Fish Fishery of the Gulf of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-03

    ... published a final rule to implement Gulf Reef Fish Amendment 37 (78 FR 27084). That final rule, in part... November 10, 2012 (77 FR 28308, May 14, 2012), and extended through May 15, 2013 (77 FR 67303, November 9... opportunity to comment on the proposed rule for Gulf Reef Fish Amendment 37 (78 FR 10122, February 13,...

  12. 78 FR 44685 - Amendments to the 2013 Mortgage Rules Under the Real Estate Settlement Procedures Act (Regulation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-24

    ... Final Rule), 78 FR 6407 (Jan. 30, 2013). \\2\\ Mortgage Servicing Rules Under the Real Estate Settlement... Final Rules), 78 FR 10695 (Feb. 14, 2013) (Regulation X), 78 FR 10901 (Feb. 14, 2013) (Regulation Z). \\3\\ Amendments to the 2013 Escrows Final Rule under the Truth in Lending Act (Regulation Z), 78 FR 30739 (May...

  13. 75 FR 69484 - Self-Regulatory Organizations; BATS Exchange, Inc.; NASDAQ OMX BX, Inc.; Chicago Board Options...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-12

    ... Release Nos. 62945 (September 20, 2010), 75 FR 58460 (September 24, 2010) (SR-BATS-2010-025); 62954 (September 20, 2010), 75 FR 59305 (September 27, 2010) (SR-BX- 2010-66); 62951 (September 20, 2010), 75 FR 59309 (September 27, 2010) (SR-CBOE-2010-087); 62949 (September 20, 2010), 75 FR 59315 (September...

  14. 78 FR 60937 - Joint Industry Plan; Order Approving the Fifth Amendment to the National Market System Plan to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-02

    ...\\ See Securities Exchange Act Release No. 70274 (August 27, 2013), 78 FR 54305 (``Notice''). II... (June 10, 2010), 75 FR 34183 (June 16, 2010) (SR-FINRA-2010-025); 62883 (September 10, 2010), 75 FR... (February 20, 2013), 78 FR 13113 (February 26, 2013). B. Fifth Amendment to the Plan The Fifth...

  15. 78 FR 18246 - Implementation of the Middle Class Tax Relief and Job Creation Act of 2012; Establishment of a...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-26

    ... these requirements. DATES: 47 CFR 1.80 and 64.1202, published at 77 FR 71131, November 29, 2012, and at 78 FR 10099, February 13, 2013, are effective March 26, 2013. FOR FURTHER INFORMATION CONTACT..., FCC 12- 129, published at 77 FR 71131, November 29, 2012, and at 78 FR 10099, February 13, 2013....

  16. 77 FR 72846 - California State Nonroad Engine Pollution Control Standards; In-Use Portable Diesel Engines 50...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-06

    ... FR 36969 (July 20, 1994). \\16\\ See 62 FR 67733 (December 30, 1997). The applicable regulations, now... the California standard. \\17\\ See 59 FR 36969 (July 20, 1994). In order to be consistent with section... EPA review of the State decision to be a narrow one.'' \\22\\ \\22\\ See, e.g., 40 FR 21102-103 (May...

  17. A polynomial f(R) inflation model

    SciTech Connect

    Huang, Qing-Guo

    2014-02-01

    Motivated by the ultraviolet complete theory of quantum gravity, for example the string theory, we investigate a polynomial f(R) inflation model in detail. We calculate the spectral index and tensor-to-scalar ratio in the f(R) inflation model with the form of f(R) = R + (R{sup 2})/6M{sup 2} + (λn)/2n (R{sup n})/(3M{sup 2}){sup n-1}. Compared to Planck 2013, we find that R{sup n} term should be exponentially suppressed, i.e. |λ{sub n}|∼<10{sup −2n+2.6}.

  18. 77 FR 59339 - Contractor Qualifications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-27

    ... [Federal Register Volume 77, Number 188 (Thursday, September 27, 2012)] [Rules and Regulations] [Page 59339] [FR Doc No: 2012-23905] DEPARTMENT OF DEFENSE Defense Acquisition Regulations System 48 CFR Part 209 Contractor Qualifications CFR Correction In Title 48 of the Code of Federal...

  19. 75 FR 10692 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-09

    ... From the Federal Register Online via the Government Publishing Office FEDERAL COMMUNICATIONS COMMISSION 47 CFR Part 80 Maritime Communications ACTION: Final rule; correction. SUMMARY: The Federal Communications Commission published in the Federal Register of February 2, 2010 (75 FR 5241), a document in...

  20. 78 FR 20244 - Product Valuation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-04

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF THE INTERIOR Office of Natural Resources Revenue 30 CFR Part 1206 Product Valuation CFR Correction In FR Doc. 2013... ``Surface Mining Reclamation and Enforcement'' is corrected to read ``Office of Natural Resources...

  1. Wormhole solutions in f(R) gravity satisfying energy conditions

    NASA Astrophysics Data System (ADS)

    Mazharimousavi, S. Habib; Halilsoy, M.

    2016-10-01

    Without reference to exotic sources construction of viable wormholes in Einstein’s general relativity remained ever a myth. With the advent of modified theories, however, specifically the f(R) theory, new hopes arose for the possibility of such objects. From this token, we construct traversable wormholes in f(R) theory supported by a fluid source which respects at least the weak energy conditions. We provide an example (Example 1) of asymptotically flat wormhole in f(R) gravity without ghosts.

  2. 77 FR 56607 - Shoshone Resource Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-13

    ... conference call is open to the public. The following business will be conducted: Finish reviewing project..., Forest Supervisor. [FR Doc. 2012-22531 Filed 9-12-12; 8:45 am] BILLING CODE 3410-11-P...

  3. 77 FR 62237 - Sunshine Act Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-12

    ...: Open. MATTERS TO BE CONSIDERED: The Commission will consider and act upon the following in open session..., Administrative Assistant. [FR Doc. 2012-25234 Filed 10-10-12; 11:15 am] BILLING CODE 6735-01-P...

  4. 76 FR 63601 - Sunshine Act Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-13

    ...: 624 Ninth Street, NW., Room 540, Washington, DC 20425. Meeting Agenda This meeting is open to the..., 2011. Kimberly A. Tolhurst, Senior Attorney-Advisor. [FR Doc. 2011-26583 Filed 10-11-11; 11:15...

  5. 76 FR 30326 - Proposed Subsequent Arrangement

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-25

    ... Nonproliferation and International Security, National Nuclear Security Administration, Department of Energy. ACTION... Nuclear Security Administration, Department of Energy. Telephone: 202-586-3806 or e- mail: Sean.Oehlbert... Energy. Anne M. Harrington, Deputy Administrator, Defense Nuclear Nonproliferation. [FR Doc....

  6. 77 FR 28250 - Entity List Additions; Corrections

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-14

    ... General Trading, Office No. 205, Platinum Business Center, Baghdad Street, Al-Nahda 2, Al-Qusais, Dubai, U.... * * * * * * * Zurmat General Trading, For all items Presumption of 77 FR 25055, Office No. 205, Platinum subject to...

  7. 75 FR 45562 - Enhancing Airline Passenger Protections

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-03

    ... travel for persons with peanut allergies. See 75 FR 32318 (June 8, 2010). Comments on the matters... coordination regarding the proposals. Accordingly, the Department finds that good cause exists to extend...

  8. 77 FR 22804 - Sunshine Act Meeting; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-17

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Sunshine Act Meeting; Correction AGENCY HOLDING THE MEETING: United States International Trade Commission. Federal Register CITATION OF PREVIOUS ANNOUNCEMENT: 77 FR 22344. ORIGINALLY PUBLISHED TIME...

  9. Loop quantum f(R) theories

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangdong; Ma, Yongge

    2011-09-01

    As modified gravity theories, the four-dimensional metric f(R) theories are cast into connection-dynamical formalism with real su(2) connections as configuration variables. This formalism enables us to extend the nonperturbative loop quantization scheme of general relativity to any metric f(R) theories. The quantum kinematical framework of f(R) gravity is rigorously constructed, where the quantum dynamics can be launched. Both Hamiltonian constraint operator and master constraint operator for f(R) theories are well defined. Our results show that the nonperturbative quantization procedure of loop quantum gravity are valid not only for general relativity but also for a rather general class of four-dimensional metric theories of gravity.

  10. 78 FR 67201 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-08

    ... call on hold if doing so will trigger recorded music or other sound. From time to time, the presiding... sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . ACCESSIBILITY: LSC complies with the...

  11. 78 FR 30339 - Sunshine Act Meeting Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-22

    ..., please refrain from placing the call on hold if doing so will trigger recorded music or other sound. From.... Questions may be sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . ACCESSIBILITY: LSC complies...

  12. 78 FR 39781 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-02

    ... call on hold if doing so will trigger recorded music or other sound. From time to time, the Chair may... may be sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . Accessibility: LSC complies with...

  13. 78 FR 36602 - Sunshine Act Meeting; Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-18

    ..., please refrain from placing the call on hold if doing so will trigger recorded music or other sound. From... sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . ACCESSIBILITY: LSC complies with the...

  14. 78 FR 33114 - Sunshine Act Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-03

    ..., please refrain from placing the call on hold if doing so will trigger recorded music or other sound. From.... Questions may be sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . Accessibility: LSC complies...

  15. 78 FR 38076 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-25

    ..., please refrain from placing the call on hold if doing so will trigger recorded music or other sound. From... sent by electronic mail to FR_NOTICE_QUESTIONS@lsc.gov . ACCESSIBILITY: LSC complies with the...

  16. 76 FR 6134 - Sunshine Act Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-03

    .... Robert E. Feldman, Executive Secretary of the Corporation, at 202-898-7043. Dated: January 31, 2011. Federal Deposit Insurance Corporation. Robert E. Feldman, Executive Secretary. [FR Doc. 2011-2445 Filed...

  17. 75 FR 3895 - Yale University, et al.;

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-25

    ..., Quanta 3D Dual-Beam Focused Ion-Beam Tool. Manufacturer: FEI Company, Czech Republic. Intended Use: See..., Quanta 200 FEG. Manufacturer: FEI Company, Czech Republic. Intended Use: See notice at 74 FR...

  18. 76 FR 51847 - Air Cargo Screening

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-18

    ... apply to international inbound cargo. \\2\\ 74 FR 47672. The IFR provides detailed information on TSA's..., Express Delivery and Logistics Association, International Air Transport Association, Meridian One... for international inbound cargo. TSA Response: TSA is working closely with its foreign...

  19. 78 FR 44247 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ... published previously a final rule establishing energy conservation standards for ice-cream freezers, self... measuring ice maker energy use. Timetable: Action Date FR Cite NPRM 07/00/13 Final Action...

  20. 75 FR 52554 - Office of the Secretary

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-26

    ...://www.reginfo.gov/public/do/PRAMain or by contacting Linda Watts Thomas on 202-693-4223 (this is not a... Register on January 22, 2010, (75 FR 3759). Dated: August 20, 2010. Linda Watts Thomas, Acting...

  1. 78 FR 70207 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-25

    ... FR 46 at junction radius level. This frame, that was previously repaired due to a crack finding in... Friday, except Federal holidays. The AD docket contains this AD, the MCAI, the regulatory evaluation,...

  2. 77 FR 39677 - Performance Review Board Membership

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-05

    ... [Federal Register Volume 77, Number 129 (Thursday, July 5, 2012)] [Notices] [Page 39677] [FR Doc No: 2012-16331] ARCHITECTURAL AND TRANSPORTATION BARRIERS COMPLIANCE BOARD Performance Review Board Membership AGENCY: Architectural and Transportation Barriers Compliance Board. ACTION: Notice....

  3. 75 FR 68789 - Sunshine Act Notices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-09

    ... (Ninth Floor) Status: This meeting will be open to the public. Items To Be Discussed: Correction and... Werth, Secretary and Clerk of the Commission. [FR Doc. 2010-28223 Filed 11-8-10; 8:45 am] BILLING...

  4. 78 FR 38236 - Proposed Establishment, Modification and Cancellation of Air Traffic Service (ATS) Routes...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-26

    ...: is a newly established route to become effective August 22, 2013 (78 FR 29615, May 21, 2013... August 22, 2013 (78 FR 29615, May 21, 2013), extending between the LOUIE, MD, fix and the Lancaster,...

  5. 76 FR 20006 - Wind Turbine Guidelines Advisory Committee; Teleconference Line Available for Public Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-11

    ... a notice of establishment of the Committee in the Federal Register (72 FR 11373). The Committee's... FR 9590). Meeting Location Information Please note that the in-person meeting location is full...

  6. 76 FR 38677 - Wind Turbine Guidelines Advisory Committee; Announcement of Public Meeting and Webcast

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-01

    ... of the Committee in the Federal Register (72 FR 11373). The Committee's purpose is to provide advice..., 2011, with a comment-period ending date of May 19, 2011 (76 FR 9590). The purpose of the...

  7. 76 FR 54481 - Wind Turbine Guidelines Advisory Committee; Announcement of Public Meeting and Webcast

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-01

    ... of the Committee in the Federal Register (72 FR 11373). The Committee's purpose is to provide advice..., 2011, with a comment-period ending date of May 19, 2011 (76 FR 9590). The purpose of the...

  8. 78 FR 22773 - Revisions to Reliability Standard for Transmission Vegetation Management; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-17

    ... Federal Register of Thursday, March 28, 2013 (78 FR 18817). The regulations established procedures with... of the Final Rule. In FR Doc. 2013-07113 appearing on page 18817 in the Federal Register of...

  9. 78 FR 2646 - Proposed Modification of Class B Airspace; Las Vegas, NV

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-14

    ... FR 65332) closed on December 26, 2012, is reopened until February 13, 2013. ADDRESSES: Send comments... of Class B Airspace; Las Vegas, NV'' (77 FR 65332). The FAA requested that comments on that...

  10. 76 FR 2712 - Ocwen Loan Servicing, LLC, Including Workers Whose Wages Were Reported Under Barclays Capital...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-14

    ... Register on December 8, 2010 (75 FR 76488). The notice as amended on December 17, 2010 to include workers... January 3, 2011 (76 FR 178). At the request of the company, the Department reviewed the certification...

  11. 77 FR 55186 - Executive-Led Indonesia Vietnam Infrastructure Business Development Mission Statement...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-07

    ...-Led Indonesia Vietnam Infrastructure Business Development Mission Statement, 77 FR, No. 131, July 9... Statement, 77 FR, No. 131, July 9, 2012, is amended to read as follows: Timeframe for Recruitment...

  12. 78 FR 54454 - Open Meeting of the Information Security and Privacy Advisory Board

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-04

    ... include the following items: --Cybersecurity Executive Order 13636, Improving Critical Infrastructure Cybersecurity (78 FR 11737, February 19, 2013); Development of New Cybersecurity Framework; Request for Information (RFI)--Developing a Framework to Improve Critical Infrastructure Cybersecurity (78 FR...

  13. 78 FR 25254 - Announcing an Open Meeting of the Information Security and Privacy Advisory Board

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-30

    ... following items: --Cybersecurity Executive Order 13636, Improving Critical Infrastructure Cybersecurity (78 FR 11737, February 19, 2013); Development of New Cybersecurity Framework; Request for Information (RFI)--Developing a Framework to Improve Critical Infrastructure Cybersecurity (78 FR 13024,...

  14. 78 FR 72063 - Open Meeting of the Information Security and Privacy Advisory Board

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-02

    ... include the following items: --Cybersecurity Executive Order 13636, Improving Critical Infrastructure Cybersecurity (78 FR 11737, February 19, 2013); Development of New Cybersecurity Framework; Request for Information (RFI)--Developing a Framework to Improve Critical Infrastructure Cybersecurity (78 FR...

  15. 76 FR 21266 - Proposed Amendment of Class E Airspace; Cocoa, FL

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-15

    ...'' under DOT Regulatory Policies and Procedures (44 FR 11034; February 26, 1979); and (3) does not warrant... continues to read as follows: Authority: 49 U.S.C. 106(g); 40103, 40113, 40120; E.O. 10854, 24 FR 9565,...

  16. 76 FR 25565 - Defense Federal Acquisition Regulations Supplement; Guidance on Personal Services (DFARS Case...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ... their own procedures. DoD published an interim rule at 75 FR 54524 on September 8, 2010, to implement... published at 75 FR 54524 on September 8, 2010, with the following changes: 0 1. The authority citation...

  17. 77 FR 32704 - Self-Regulatory Organizations; Municipal Securities Rulemaking Board; Order Granting Approval of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-01

    ..., 2012), 77 FR 22367 (``Notice''). \\5\\ See letter to Elizabeth M. Murphy, Secretary, Commission, from.... 66625 (March 20, 2012), 77 FR 17548 (March 26, 2012) (SR-MSRB-2012-04). The MSRB noted that,...

  18. 78 FR 78451 - Self-Regulatory Organizations; Municipal Securities Rulemaking Board; Notice of Designation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-26

    ... (June 24, 2013), 78 FR 39048. \\4\\ See letters to Elizabeth M. Murphy, Secretary, Commission, from Tamara.... 70531 (September 26, 2013), 78 FR 60985 (October 2, 2013) (``Order Instituting Proceedings'')....

  19. 75 FR 8389 - Agency Information Collection Activities: Submission for OMB Review; Comment Request, OMB No...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-24

    ... title has changed since publication of the 60-day Federal Register Notice at 74 FR 48090, Sept. 21, 2009... changed since publication of the 60-day Federal Register Notice at 74 FR 48090, Sept. 21, 2009....

  20. 75 FR 8385 - Agency Information Collection Activities: Submission for OMB Review; Comment Request, OMB No...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-24

    ... changed since publication of the 60-day Federal Register Notice at 74 FR 48091, Sept. 21, 2009. Type of... publication of the 60-day Federal Register Notice at 74 FR 48091, Sept. 21, 2009. Form Titles and...

  1. 76 FR 71465 - Defense Federal Acquisition Regulations Supplement; Notification Requirements for Awards of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-18

    ... DoD published an interim rule at 75 FR 40716 on July 13, 2010, to implement section 814 of the... final the interim rule published at 75 FR 40716 on July 13, 2010, with the following changes: PART...

  2. 78 FR 33977 - Approval and Promulgation of Air Quality Implementation Plans; Delaware, District of Columbia...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-06

    ...?collectionCode=CFR . C. Maryland Section 52.1072 Conditional approval. On April 17, 2003, (68 FR 19106), EPA... section is being removed because on April 15, 2004 (69 FR 19937), 40 CFR 52.1072 was stayed...

  3. 77 FR 43612 - Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV); Decision To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-25

    ... Coopersburg, Pennsylvania. 76 FR 35015-16. The complaint alleges violations of section 337 of the Tariff Act... disapprove the Commission's action. See Presidential Memorandum of July 21, 2005, 70 FR 43251 (July 26,...

  4. 77 FR 69499 - Certain LED Photographic Lighting Devices and Components Thereof; Notice of the Commission's...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-19

    ... Litepanels, Ltd. (collectively, ``Litepanels''). 76 FR 55416 (Sept. 7, 2011). The complaint alleged... disapprove the Commission's action. See Presidential Memorandum of July 21, 2005, 70 FR 43251 (July 26,...

  5. 77 FR 64827 - Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV); Final...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-23

    ... filed by Lutron Electronics Co., Inc. (``Lutron'') of Coopersburg, Pennsylvania. 76 FR 35015-16. The... bonding from the parties and interested non-parties. 77 FR 43612-14 (July 25, 2012). On August 2 and...

  6. 77 FR 30888 - Heating, Cooling, and Lighting Standards for Bureau-Funded Dormitory Facilities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-24

    ... 30888-30891] [FR Doc No: 2012-12678] DEPARTMENT OF THE INTERIOR Bureau of Indian Affairs 25 CFR Part 36... method for administering grants to tribally controlled schools. 70 FR 22178. [[Page 30889

  7. 76 FR 66995 - David T. Koon, M.D.; Revocation of Registration

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-28

    ...); Sheran Arden Yeates, 71 FR 39130, 39131 (2006); Dominick A. Ricci, 58 FR 51104, 51105 (1993); Bobby Watts... registration (when required), the Agency has revoked the practitioner's registration. James Stephen...

  8. 77 FR 38289 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-27

    ..., without extension, Capital Assessments and Stress Testing information collection (FR Y- 14A/Q/M). The... Stress Testing information collection (FR Y-14A/Q/M). In recognition of the complexities of the...

  9. 75 FR 5631 - Wolf Creek Nuclear Operating Corporation, Wolf Creek Generating Station; Environmental Assessment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-03

    ... Federal Register notice dated March 27, 2009 (74 FR 13967). There will be no change to radioactive... no significant impact [Part 73, Power Reactor Security Requirements, 74 FR 13926, 13967 (March...

  10. 77 FR 61429 - Agency Information Collection Activities: Announcement of the Office of Management and Budget...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-09

    .... OSHA-2012-0005. Coke Oven Emissions (29 CFR 1910.1029)........ 08/22/2011, 76 FR 52350, Docket 1218... FR 61752, Docket 1218-0061 03/31/2015 No. OSHA-2011-0194. Electrical Standards for Construction...

  11. 75 FR 47604 - Draft Guidance for Industry and Food and Drug Administration Staff; Medical Devices; Neurological...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-06

    ... July 28, 2010 (75 FR 44267). The document reopened the comment period for a notice of availability of..., Silver Spring, MD 20993, 301-796-9148. SUPPLEMENTARY INFORMATION: In FR Doc. 2010-18406, appearing...

  12. 78 FR 16817 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; 2013 Commercial Accountability...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-19

    ... implemented the final rule (65 FR 16336, March 28, 2000) that divided the Florida west coast subzone of the... southern Florida west coast subzone (78 FR 15642, March 12, 2013). Under 50 CFR 622.43(a), NMFS is...

  13. 77 FR 35747 - Highway Safety Programs; Conforming Products List of Evidential Breath Alcohol Measurement Devices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-14

    ... Evidential Breath Alcohol Measurement Devices AGENCY: National Highway Traffic Safety Administration... Specifications for Evidential Breath Alcohol Measurement Devices dated, September 17, 1993 (58 FR 48705). DATES... Alcohol (38 FR 30459). A Qualified Products List of Evidential Breath Measurement Devices comprised...

  14. 77 FR 30559 - Entergy Nuclear Operations, Inc.; Establishment of Atomic Safety and Licensing Board

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-23

    ... delegation by the Commission dated December 29, 1972, published in the Federal Register, 37 FR 28,710 (1972... accordance with the NRC E-filing rule, which the NRC promulgated in August 2007 (72 FR 49,139). Issued...

  15. 78 FR 45935 - Domestic Nuclear Detection Office; Announcement of Requirements and Registration for the National...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-30

    ... information about the Rad/Nuc Challenge, visit http://www.radnucchallenge.org . Correction Correct FR Doc. 2013-10928 as follows: 1. In the Federal Register of May 8, 2013, in FR Doc. 2013-10928, on page...

  16. 78 FR 79362 - Proposed Flood Elevation Determinations for Nicollet County, Minnesota, and Incorporated Areas

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... Incorporated Areas. DATES: The proposed rule published October 6, 2011, at 76 FR 62006, is withdrawn as of... INFORMATION: On October 6, 2011, FEMA published a proposed rulemaking at 76 FR 62006, proposing...

  17. 78 FR 79298 - Securities Exempted; Distribution of Shares by Registered Open-End Management Investment Company...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... Business Investment Companies, 23 FR 10484 (Dec. 30, 1958). \\2\\ Amendments to the Offering Exemption Under Regulation E of the Securities Act of 1933, 49 FR 35342 (Sept. 7, 1984). As part of Regulation E, rule...

  18. 76 FR 15224 - Reducing Regulatory Burden; Retrospective Review Under E.O. 13563

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-21

    ... Regulatory Burden; Retrospective Review Under E.O. 13563 AGENCY: Office of the Secretary, Labor. ACTION...: E.O. 13653, 76 FR 3821, Jan. 21, 2011; E.O. 12866, 58 FR 51735, Oct. 4, 1993. Dated: March 15,...

  19. 76 FR 18104 - Reducing Regulatory Burden; Retrospective Review Under E.O. 13563

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-01

    ... Regulatory Burden; Retrospective Review Under E.O. 13563 AGENCY: Office of the Secretary, Labor. ACTION...: E.O. 13653, 76 FR 3821, Jan. 21, 2011; E.O. 12866, 58 FR 51735, Oct. 4, 1993. William E....

  20. 76 FR 43347 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Cooperative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-20

    ... pursuant to Section 6(b) of the Act on February 26, 2009 (74 FR 8813). The last notification was filed with...) of the Act on June 4, 2010 (75 FR 31816). Patricia A. Brink, Director of Civil Enforcement,...

  1. 75 FR 4422 - Notice Pursuant to The National Cooperative Research and Production Act of 1993-Cooperative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-27

    ... Register pursuant to Section 6(b) of the Act on February 25, 2008 (73 FR 10064). The last notification was... December 17, 2009 (74 FR 66995). Patricia A. Brink, Deputy Director of Operations, Antitrust...

  2. 76 FR 32886 - Control of Emissions From New Highway Vehicles and Engines; Guidance on EPA's Certification...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-07

    ... protection and infrastructure requirements, and requirements regarding unregulated pollutants. \\7\\ See 75 FR... final guidance. \\9\\ See 75 FR 39251 (July 8, 2010). Public comments received in response to the...

  3. 75 FR 66792 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Cooperative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-29

    ... February 25, 2008 (73 FR 10064). The last notification was filed with the Department on December 10, 2009. A notice was published in the Federal Register on January 27, 2010 (75 FR 4422). Patricia A....

  4. 77 FR 46960 - Approval and Promulgation of Air Quality Implementation Plans; Wisconsin; Forest County...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-07

    ... information on the Class I Area redesignation, see 73 FR 23086, April 29, 2008, and 77 FR 20575, April 5, 2012..., Particulate matter, Reporting and recordkeeping requirements, Sulfur oxides, Volatile organic compounds....

  5. 76 FR 80344 - Privacy Act of 1974: Systems of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-23

    ...] [FR Doc No: 2011-32942] DEPARTMENT OF COMMERCE National Telecommunications and Information...: National Telecommunications and Information Administration, U.S. Department of Commerce. ACTION: Notice. [[Page 80345

  6. Gravitomagnetic gyroscope precession in Palatini f(R) gravity

    SciTech Connect

    Ruggiero, Matteo Luca

    2009-04-15

    We study gravitomagnetic effects in the Palatini formalism of f(R) gravity. On using the Kerr-de Sitter metric, which is a solution of f(R) field equations, we calculate the impact of f(R) gravity on the gravitomagnetic precession of an orbiting gyroscope. We show that, even though an f(R) contribution is present in principle, its magnitude is negligibly small and far to be detectable in the present (like GP-B) and foreseeable space missions or observational tests around the Earth.

  7. 75 FR 27845 - Tennessee Disaster Number TN-00038

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-18

    ..., Hardin, Jackson, Lauderdale, Lawrence, Lewis, Macon, Robertson, Smith, Stewart, Trousdale, Wayne, Wilson... Assistance Numbers 59002 and 59008) James E. Rivera, Associate Administrator for Disaster Assistance. [FR...

  8. 76 FR 50714 - Federal Acquisition Regulation; Documenting Contractor Performance; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-16

    ... Federal Acquisition Regulation; Documenting Contractor Performance; Correction AGENCY: Department of... Performance. DATES: The comment period for the proposed rule published June, 28, 2011, at 76 FR 37704,...

  9. 75 FR 10254 - Environmental Impact Statements; Notice of Availability

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-05

    .... 20100050, Draft EIS, BLM, CA, Stirling Energy Systems (SES) Solar 2 Project, Construct and Operate..., 2010. Robert W. Hargrove, Director, NEPA Compliance Division, Office of Federal Activities. [FR...

  10. Nuclear Data Sheets for 225Fr

    SciTech Connect

    Baglin, Coral M.

    2005-05-16

    Nuclear structure data pertaining to {sup 225}Fr have been evaluated, and incorporated into the ENSDF data file. This evaluation includes literature available by 16 May 2005 and supersedes the previous publication for {sup 225}Fr (Y.A. Akovali, ''Nuclear Data Sheets 60, 617 (1990)'', literature cutoff date 1 June 1989). Data have been incorporated from the following references: 1987Co19, 1997BuO3 and 2003AuO3.

  11. 75 FR 30385 - Foreign-Trade Zone 64-Jacksonville, FL; Site Renumbering Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-01

    ... approved by the FTZ Board (the Board) on December 29, 1980 (Board Order 170, 46 FR 1330, 01/06/81) and expanded on September 20, 1985 (Board Order 312, 50 FR 40209, 10/02/85), on December 24, 1986 (Board Order 337, 52 FR 1214, 01/12/87), on October 29, 1991 (Board Order 540, 56 FR 56627, 11/06/91), and...

  12. Ion transport of Fr nuclear reaction products

    SciTech Connect

    Behr, J.A.; Cahn, S.B.; Dutta, S.B.

    1993-04-01

    Experiments planned for fundamental studies of radioactive atoms in magneto-optic traps require efficient deceleration and transport of nuclear reaction products to energies and locations where they can be trapped. The authors have built a low-energy ion transport system for Francium and other alkalis. A thick Au target is held on a W rod at 45{degrees} to the accelerator beam direction. The heavy-ion fusion reaction 115 MeV {sup 18}O + {sup 197}Au produces {sup 211,210,209}Fr recoil products which are stopped in the target. The target is heated to close to the melting point of Au to allow the Fr to diffuse to the surface, where it is ionized due to Au`s high work function, and is directly extracted by an electrode at 90{degrees} to the accelerator beam direction. The Fr is transported by electrostatic optics {approximately}1 m to a catcher viewed by an {alpha} detector: {ge}15% of the Fr produced in the target reaches the catcher. 2{times}10{sup 5} Fr/sec have been produced at the catcher, yielding at equilibrium a sample of 3x10{sup 7}Fr nuclei. This scheme physically decouples the target diffusion from the surface neutralization process, which can occur at a lower temperature more compatible with the neutral-atom trap.

  13. 78 FR 63015 - Exhaust Emissions Standards for New Aircraft Gas Turbine Engines and Identification Plate for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-23

    ... kilonewtons (kN) (76 FR 45012). The EPA also proposed adopting the gas turbine engine test procedures of the... 18, 2012 (77 FR 36342), and was effective July 18, 2012. On December 31, 2012, the FAA published a final rule with a request for comments (77 FR 76842) adopting the EPA's new emissions standards in...

  14. 78 FR 63017 - Exhaust Emissions Standards for New Aircraft Gas Turbine Engines and Identification Plate for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-23

    ... engines with rated thrusts greater than 26.7 kilonewtons (kN) (76 FR 45012). The EPA also proposed...). The final rule adopting these proposals was published on June 18, 2012 (77 FR 36342), and was... (77 FR 76842) adopting the EPA's new emissions standards in part 34. Although the EPA's NPRM...

  15. 78 FR 33966 - Establishment of Class E Airspace; Pine Island, FL

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-06

    ... Pine Island, FL (78 FR 14477). Interested parties were invited to participate in this rulemaking effort... Executive Order 12866; (2) is not a ``significant rule'' under DOT Regulatory Policies and Procedures (44 FR...: Authority: 49 U.S.C. 106(g); 40103, 40113, 40120; E.O. 10854, 24 FR 9565, 3 CFR, 1959-1963 Comp., p....

  16. 77 FR 58765 - Airworthiness Directives; Fokker Services B.V. Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-24

    ... NPRM was published in the Federal Register on June 12, 2012 (77 FR 34872). That NPRM proposed to... in developing this AD. We received no comments on the NPRM (77 FR 34872, June 12, 2012) or on the... NPRM (77 FR 34872, June 12, 2012) for correcting the unsafe condition; and Do not add any...

  17. 77 FR 58858 - Agency Information Collection Activity: Subpart B, Plans and Information; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-24

    ... FR 64432), BSEE is requesting OMB approval of the already approved information collections that were... FR 39419) announcing that we would submit this ICR to OMB for approval. The notice provided the... Register on September 30, 2011 (76 FR 60856). If you wish to comment in response to this notice, you...

  18. 75 FR 62413 - Notice of Proposed Information Collection: Comment Request; Recertification of Family Income and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-08

    ... [Federal Register Volume 75, Number 195 (Friday, October 8, 2010)] [Notices] [Page 62413] [FR Doc No: 2010-25355] DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT [Docket No. FR-5380-N-37] Notice of... Secretary for Housing. [FR Doc. 2010-25355 Filed 10-7-10; 8:45 am] BILLING CODE 4210-67-P...

  19. 75 FR 18208 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ...: Census of Finance Companies. Agency form number: FR 3033p. OMB control number: 7100-0277. Frequency: One-time. Reporters: Domestic finance companies and mortgage companies. Estimated annual reporting hours: 6... Census of Finance Companies (FR 3033p) and the Quinquennial Finance Company Survey (FR 3033s). The...

  20. 77 FR 29680 - Federal Property Suitable as Facilities To Assist the Homeless

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-18

    ... [Federal Register Volume 77, Number 97 (Friday, May 18, 2012)] [Notices] [Page 29680] [FR Doc No: 2012-11736] DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT [Docket No. FR-5601-N-19] Federal Property... Assistant Secretary for Special Needs. [FR Doc. 2012-11736 Filed 5-17-12; 8:45 am] BILLING CODE 4210-67-P...

  1. 75 FR 22543 - Airworthiness Directives; Aircraft Industries a.s. Model L 23 Super Blanik Gliders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-29

    ... proposed AD. Discussion On March 29, 2010, we issued AD 2010-08-01, Amendment 39-16256 (75 FR 17295; April... rule'' under the DOT Regulatory Policies and Procedures (44 FR 11034, February 26, 1979); and 3. Will... amends Sec. 39.13 by removing Amendment 39-16256 (75 FR 17295; April 6, 2010), and adding the...

  2. 77 FR 58469 - Asian Longhorned Beetle; Quarantined Areas in Massachusetts, Ohio, and New York

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-21

    ... interim rule published at 77 FR 31720-31722 on May 30, 2012. FOR FURTHER INFORMATION CONTACT: Ms. Claudia... rule \\1\\ effective and published on May 30, 2012, in the Federal Register (77 FR 31720-31722, Docket No..., the interim rule that amended 7 CFR part 301 and that was published at 77 FR 31720-31722 on May...

  3. 77 FR 3223 - National Emissions Standards for Hazardous Air Pollutants: Mineral Wool Production and Wool...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-23

    ...-3224] [FR Doc No: 2012-1222] ENVIRONMENTAL PROTECTION AGENCY 40 CFR Part 63 [EPA-HQ-OAR-2010-1042; FRL... rule (76 FR 78872). The comment period for the mineral wool production proposed rule was not extended..., Assistant Administrator. [FR Doc. 2012-1222 Filed 1-20-12; 8:45 am] BILLING CODE 6560-50-P...

  4. 76 FR 37272 - Approval and Promulgation of Air Quality Implementation Plans; Illinois; Royal Fiberglass Pools...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-27

    ... Illinois SIP on February 21, 1980 (45 FR 11472). The rule states that ``no person shall cause or allow the... FR 51735, October 4, 1993); Does not impose an information collection burden under the provisions of... Federalism implications as specified in Executive Order 13132 (64 FR 43255, August 10, 1999); Is not...

  5. 75 FR 2582 - Proposed Modification of the Atlanta, GA, Class B Airspace Area; Public Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-15

    ..., in Covington, GA, as published in the Federal Register on Friday, December 4, 2009 (74 FR 63818), FR... Federal Aviation Administration Proposed Modification of the Atlanta, GA, Class B Airspace Area; Public... Friday, December 4, 2009, concerning a proposal to revise Class B airspace at Atlanta, GA, (74 FR...

  6. 76 FR 68734 - Taking and Importing Marine Mammals: Taking Marine Mammals Incidental to Navy Training Exercises...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-07

    ... mine neutralization training using time-delay firing devices (TDFD) within the above Range Complexes...: 74 FR 28328; JAX: 74 FR 28349; CHPT: 74 FR 28370). The potential effects of mine neutralization... three Range Complexes and mine neutralization training has been included in the specified activity...

  7. 77 FR 3262 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-23

    ... [Federal Register Volume 77, Number 14 (Monday, January 23, 2012)] [Notices] [Pages 3262-3263] [FR... according to the procedures prescribed in 5 CFR 1320.12. On August 9, 2011 (76 FR 48857), EPA sought... Approved ICR Burdens. John Moses, Director, Collection Strategies Division. [FR Doc. 2012-1181 Filed...

  8. 78 FR 33106 - Certain Automated Media Library Devices; Decision to Modify In Part a Remand Initial...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-03

    ... Diego, California (``Overland'') on October 19, 2010, and supplemented on November 9, 2010. 75 FR 71735... on remedy, the public interest and bonding. 77 FR 51573 (August 24, 2012). On September 4, ] 2012... target date for completion of the investigation. 77 FR 65907 (Oct. 31, 2012). Specifically,...

  9. 75 FR 15444 - Agency Information Collection Activities: Submission for OMB Review; Comment Request, OMB No...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-29

    ... 60-day Federal Register Notice at 74 FR 59234, Nov. 17, 2009. Abstract: The PSGP is an important tool... 60-day Federal Register Notice at 74 FR 59234, Nov. 17, 2009. Estimated Number of Respondents: 478... Notice at 74 FR 59234, Nov. 17, 2009. Frequency of Response: On Occasion. Estimated Average Hour...

  10. 77 FR 60041 - Heating, Cooling, and Lighting Standards for Bureau-Funded Dormitory Facilities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-02

    ... final rule (77 FR 30888) for additional background on the Committee. The Committee determined, by..., BIA published the interim final rule (77 FR 30888), under Docket No. BIA-2012-0001, to make the codes... May 24, 2012, at 77 FR 30888, is adopted as final without change. Dated: September 20, 2012. Donald...

  11. 77 FR 58027 - Approval and Promulgation of Implementation Plans; Florida: New Source Review-Prevention of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-19

    ...) Program for Particulate Matter Less than 2.5 Micrometers (PM 2.5 ),'' 73 FR 28321 (May 16, 2008... Significant Monitoring Concentration (SMC),'' 75 FR 64864 (October 20, 2010), hereafter referred to as the... Florida's NSR PSD program. See 77 FR 44198. Comments on the proposed rulemaking were due on or...

  12. 76 FR 28455 - Granular Polytetrafluoroethylene Resin From Italy; Scheduling of an Expedited Five-Year Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-17

    ... determined that the domestic interested party group response to its notice of institution (75 FR 67105... amended, 67 FR 68036 (November 8, 2002). Even where electronic filing of a document is permitted, certain... Filing Procedures, 67 FR 68168, 68173 (November 8, 2002). \\2\\ The Commission has found the...

  13. 76 FR 27663 - Granular Polytetrafluoroethylene Resin From Italy; Scheduling of an Expedited Five-Year Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-12

    ... determined that the domestic interested party group response to its notice of institution (75 FR 67105... amended, 67 FR 68036 (November 8, 2002). Even where electronic filing of a document is permitted, certain... Electronic Filing Procedures, 67 FR 68168, 68173 (November 8, 2002). \\2\\ The Commission has found...

  14. 76 FR 12939 - Granular Polytetrafluoroethylene Resin From Italy: Final Results of Expedited Sunset Review of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-09

    ... amended (``the Act''). See Initiation of Five-Year (``Sunset'') Review, 75 FR 67082 (November 1, 2010... of Five-Year (``Sunset'') Review: Correction, 76 FR 2083 (January 12, 2011) (``Correction Notice... Determination of Circumvention of ] Antidumping Duty Order, 58 FR 26100 (April 30, 1993). The order...

  15. 76 FR 42114 - Granular Polytetrafluoroethylene Resin From Italy: Continuation of Antidumping Duty Order

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-18

    ... FR 67082 (November 1, 2010). As a result of its review, the ] Department determined that revocation... Expedited Sunset Review of the Antidumping Duty Order, 76 FR 12939 (March 9, 2011). On July 7, 2011, the ITC... Granular Polytetrafluoroethylene Resin From Italy, 76 FR 39896 (July 7, 2011), and USITC Publication...

  16. 78 FR 56734 - Certain Rubber Resins and Processes for Manufacturing Same; Commission Determination To Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-13

    ... Group'' or ``SI'') on May 21, 2012, as supplemented on June 12, 2012. 77 FR 38083 (June 26, 2012). The...) Limited of Belize City, Belize as respondents. 78 FR 3817 (January 17, 2013). On June 17, 2013, the... approve or disapprove the Commission's action. See Presidential Memorandum of July 21, 2005, 70 FR...

  17. 77 FR 3640 - Withdrawal of Proposed Rule and Closure of Petition for Rulemaking: Organization of Agreement...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-25

    ... licensed device (74 FR 38372; August 3, 2009) is withdrawn on January 25, 2012. The docket for PRM-31-5 is... that would have implemented many of the suggestions in the PRM (74 FR 38372; August 3, 2009). The NRC..., ``Limiting the Quantity of Byproduct Material in a Generally Licensed Device'' (74 FR 38372). This...

  18. 77 FR 37937 - License Renewal Application for Prairie Island Nuclear Generating Plant Independent Spent Fuel...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-25

    ... the license for the ISFSI would be forty (40) years. On February 16, 2011 (76 FR 8872), revisions to... accordance with the NRC E-Filing rule (72 FR 49139; August 28, 2007). The E-Filing process requires...\\ Requestors should note that the filing requirements of the NRC's E-Filing Rule (72 FR 49139; August 28,...

  19. 75 FR 14474 - STP Nuclear Operating Company; Notice of Availability of the Draft Environmental Impact Statement...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... report (ER), was published in the Federal Register on October 24, 2007 (72 FR 60394). A notice of... FR 68597). A notice of intent to prepare an environmental impact statement (EIS) and to conduct the scoping process was published in the Federal Register on December 21, 2007 (72 FR 72774). The purpose...

  20. 78 FR 40698 - Takes of Marine Mammals Incidental to Specified Activities; Office of Naval Research Acoustic...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-08

    ... complete on March 7, 2013. On April 2, 2013, NMFS published a Federal Register notice (78 FR 19652... activity was provided in the proposed IHA (78 FR 19652, April 2, 2013). Comments and Responses A notice of... April 2, 2013 (78 FR 19652). During the 30-day public comment period, we received comments from...

  1. 78 FR 78808 - Proposed Flood Elevation Determinations for Pierce County, Washington, and Incorporated Areas

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-27

    ..., and Incorporated Areas. DATES: The proposed rule published December 6, 2007, at 72 FR 68784, corrected April 16, 2012, at 77 FR 22551, is withdrawn effective December 27, 2013. ADDRESSES: You may submit... proposed rulemaking at 72 FR 68784, proposing flood elevation determinations along one or more...

  2. 78 FR 76667 - Self-Regulatory Organizations; International Securities Exchange, LLC; Notice of Filing and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-18

    ... Act Release No. 69496 (May 2, 2013), 78 FR 26671 (May 7, 2013), (Notice of filing and immediate...), 69 FR 49924 (August 12, 2004) (policy adopted by the Financial Industry Regulatory Authority (``FINRA.... 48840 (November 25, 2003), 68 FR 67711 (December 3, 2003) (SR-ISE-2003-29). \\7\\ The Exchange notes...

  3. 75 FR 42000 - Requirements for Fingerprint-Based Criminal History Records Checks for Individuals Seeking...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-20

    ... Access to Research and Test Reactors, issued April 30, 2007 (72 FR 25337; May 4, 2007). EA-07-098... for Unescorted Access to the General Atomics Research and Test Reactors, issued August 1, 2007 (72 FR..., 2009 (74 FR 17115). Regulatory Analysis X ML101670084 X Regulatory Analysis Appendix...

  4. 76 FR 11523 - Atomic Safety and Licensing Board; AREVA Enrichment Services, LLC (Eagle Rock Enrichment Facility...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-02

    ..., ID, 76 FR 9054 (Feb. 16, 2011). In accord with Atomic Energy Act (AEA) section 274l, 42 U.S.C. Sec... Rock Enrichment Facility), 74 FR 38,052, 38,055 (Jul. 30, 2009) (CLI-09- 15, 70 NRC 1, 10-11 (2009... of Enrichment Facility Licensing Proceeding), 75 FR 63,213 (Oct. 14, 2010), which was the subject...

  5. 78 FR 37325 - License Renewal of Nuclear Power Plants; Generic Environmental Impact Statement and Standard...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-20

    ... applicants and the NRC staff. The NRC published the draft Revision 1 to the GEIS on July 31, 2009 (74 FR... comment period to January 12, 2010 (74 FR 51522; October 7, 2009). The intent of the GEIS is to determine... concerned or pertained to the proposed rule (74 FR 38117 published July 31, 2009) and to the draft...

  6. 77 FR 17033 - Taking and Importing Marine Mammals: Taking Marine Mammals Incidental to Navy's Training...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... GOMEX Range Complex were published on February 17, 2011 (76 FR 9250), and remain in effect through... Register notice and 50 CFR part 218 subpart D. On February 1, 2012, NMFS published a final rule (77 FR 4917... issued on February 17, 2011 (76 FR 9250). The application requested authorization, for a period of...

  7. 77 FR 4995 - Initiation of Five-Year (“Sunset”) Review

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-01

    ... Countervailing Duty Orders, 63 FR 13516 (March 20, 1998) and 70 FR 62061 (October 28, 2005). Guidance on... Antidumping and Countervailing Duty Orders: Policy Bulletin, 63 FR 18871 (April 16, 1998). Initiation of... 731-TA-739......... Japan......... Clad Steel Plate (3rd Review)..... David Goldberger (202)...

  8. 76 FR 77230 - Agency Information Collection Activities; Proposed Collection; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-12

    ... Amended: Advance Notice of Proposed Rulemaking; Request for Public Comment, 76 FR 41148 (Jul. 13, 2011... Proposed Rulemaking: Request for Comment, 76 FR 13550 (Mar. 14, 2011); and Federal Trade Commission: Rules... Rulemaking; Request for Public Comment, 76 FR 68690 (Nov. 7, 2011). The Commission also announced that...

  9. 78 FR 79300 - Cardiovascular Devices; Reclassification of Intra-Aortic Balloon and Control Systems for Acute...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... proposed order in the Federal Register of June 19, 2013 (78 FR 36702) (the 2013 proposed order). FDA... adequate scientific evidence. FDA published the 2013 proposed order on June 19, 2013 (78 FR 36702). FDA... devices were classified in 1980, the 30-month period has expired (45 FR 7966; February 5, 1980)....

  10. 78 FR 79295 - Airworthiness Directives; CFM International S.A. Turbofan Engines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... FR 34605). The NPRM proposed to require an independent inspection to verify re-installation of the... assemblies using the SBs referenced in the NPRM (78 FR 34605, June 10, 2013) along with other acceptable... that we harmonize differences between the NPRM (78 FR 34605, June 10, 2013) and EASA AD...

  11. 78 FR 79449 - Information Collection Being Reviewed by the Federal Communications Commission Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ...-Speech Services for Individuals with Hearing and Speech Disabilities, FCC 04-137, published at 69 FR 53346, September 1, 2004, and at 69 FR 53382, September 1, 2004. In the Report and Order, the Commission... Service, FCC 06-182, published at 72 FR 6960, February 14, 2007. The ruling applied several of the...

  12. 78 FR 79461 - Agency Information Collection Activities; Submission for Office of Management and Budget Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... and restaurants. In the Federal Register of November 1, 2013 (78 FR 65663), FDA published a 60-day... referenced our Federal Register notice published on November 8, 2013 (78 FR 67169) (``the November 8, 2013... provided in the nutrition labeling of food. In the Federal Register of July 11, 2003 (68 FR 41434),...

  13. 78 FR 79403 - Takes of Marine Mammals Incidental to Specified Activities; Taking Marine Mammals Incidental to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... of California Santa Cruz published in the Federal Register on October 30, 2013 (78 FR 64918... time. The Federal Register notice that NMFS incorrectly published on December 23, 2013 (78 FR 77433... Proposed IHA notice of December 23, 2013 (78 FR 77433), as the public was already afforded an...

  14. 78 FR 79340 - Approval and Promulgation of Air Quality Implementation Plans; Texas; Stage II Vapor Recovery...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... worse. The EPA approved these rules on April 15, 1994 (59 FR 17940). The four areas where Stage II is... Refueling Vapor Recovery and Stage II Waiver, published on July 15, 2011 (76 FR 41731). Each year, non-ORVR... to and will soon surpass the emission reductions achieved by Stage II alone (see 77 FR 28772). In...

  15. 78 FR 79636 - Restructuring of Regulations on the Importation of Plants for Planting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... 79636-79637] [FR Doc No: 2013-31146] DEPARTMENT OF AGRICULTURE Animal and Plant Health Inspection.... DATES: The comment period for the proposed rule published April 25, 2013 (78 FR 24634) is reopened. We..., 2013, we published in the Federal Register (78 FR 24634-24663, Docket No. APHIS-2008-0011) a...

  16. 78 FR 80381 - Federal Acquisition Regulation; Federal Acquisition Circular 2005-72; Small Entity Compliance Guide

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 80381-80382] [FR Doc No: 2013-31152] DEPARTMENT OF DEFENSE GENERAL SERVICES ADMINISTRATION... rule adopts, without change, an interim rule which was published in the Federal Register at 78 FR 37686...-wide Policy. [FR Doc. 2013-31152 Filed 12-30-13; 8:45 am] BILLING CODE 6820-EP-P...

  17. 78 FR 79620 - Defense Federal Acquisition Regulation Supplement; Trade Agreements Thresholds (DFARS Case 2013...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 79620-79621] [FR Doc No: 2013-30792] DEPARTMENT OF DEFENSE Defense Acquisitions Regulations System... FR 76700, December 18, 2013): Supply contract Construction Trade agreement (equal to or contract... removing ``$202,000'' and adding ``$204,000'' in its place. [FR Doc. 2013-30792 Filed 12-30-13; 8:45...

  18. 78 FR 80376 - Federal Acquisition Regulation; Prioritizing Sources of Supplies and Services for Use by the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 80376-80379] [FR Doc No: 2013-31149] DEPARTMENT OF DEFENSE GENERAL SERVICES ADMINISTRATION... Federal Register at 76 FR 34634 on June 14, 2011, to amend the Federal Acquisition Regulation (FAR) to... published in the Federal Register at 77 FR 54872 on September 6, 2012. Six respondents submitted comments...

  19. 78 FR 80382 - Federal Acquisition Regulation; Terms of Service and Open-Ended Indemnification and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Pages 80382-80384] [FR Doc No: 2013-31150] DEPARTMENT OF DEFENSE GENERAL SERVICES ADMINISTRATION... 78 FR 37686 on June 21, 2013, to implement a recent DOJ OLC opinion, entitled ``Memorandum for... 12, 13, 32, 43, and 52, which was published in the Federal Register at 78 FR 37686 on June 21,...

  20. 78 FR 79567 - Food Distribution Program on Indian Reservations: Income Deductions and Resource Eligibility...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [Page 79567] [FR Doc No: 2013-31351] DEPARTMENT OF AGRICULTURE Food and Nutrition Service 7 CFR Part 253... ICR associated with the final rule published in the Federal Register on August 27, 2013, at 78 FR... Nutrition Service. [FR Doc. 2013-31351 Filed 12-30-13; 8:45 am] BILLING CODE 3410-30-P...

  1. 78 FR 79701 - Tentative Determination Regarding Partially Hydrogenated Oils; Request for Comments and for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79701] [FR... November 8, 2013 (78 FR 67169). In the notice, we requested comments on our tentative determination that... (78 FR 67169), FDA published a notice announcing our tentative determination that PHOs, which are...

  2. 78 FR 79721 - Self-Regulatory Organizations; International Securities Exchange, LLC; Notice of Filing and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... 79721-79723] [FR Doc No: 2013-31229] SECURITIES AND EXCHANGE COMMISSION [Release No. 34-71182; File No... Exchange Act Release No. 63955 (February 24, 2011), 76 FR 11533 (March 2, 2011) (SR-ISE-2010-73). For... Release No. 54389 (August 31, 2006), 71 FR 52829 (September 7, 2006) (Original QCT Exemption)....

  3. 78 FR 79662 - Approval of Subzone Status; VF Jeanswear; Hackleburg, Alabama

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79662] [FR... (78 FR 59469, 9/27/2013). The FTZ staff examiner reviewed the application and determined that it meets... activation limit. Dated: December 19, 2013. Andrew McGilvray, Executive Secretary. [FR Doc. 2013-31352...

  4. 78 FR 79652 - Taxation of U.S. Persons That Are Shareholders of Section 1291 Funds

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ...] [FR Doc No: 2013-30844] DEPARTMENT OF THE TREASURY Internal Revenue Service 26 CFR Part 1 [REG-113350...). DATES: The proposed rule published in the Federal Register on April 1, 1992 (57 FR 11024) is withdrawn... regulations (INTL-656-87, 1992-18 IRB 23, 57 FR 11024), including Sec. 1.1291-1 that provided guidance on...

  5. 78 FR 40523 - Order Exempting Market Makers Participating in NASDAQ Stock Market LLC's Market Quality Program...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-05

    ... Exchange Act Release No. 68515 (Dec. 21, 2012), 77 FR 77141 (Dec. 31, 2012) (``Notice''). On February 7.... 68925 (Feb. 14, 2013), 78 FR 12116 (Feb. 21, 2013). The Approval Order grants approval of the proposed...).\\6\\ \\5\\ 15 U.S.C. 78k(d)(1). \\6\\ See, e.g., Exchange Act Release Nos. 6726 (Feb. 8, 1962), 27 FR...

  6. 75 FR 73967 - Approval and Promulgation of State Air Quality Plans for Designated Facilities and Pollutants...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-30

    ..., 2000 edition of the Federal Register and codified in 40 CFR part 62, subpart I. (65 FR 20090). However... Order Reviews A. General Requirements Under Executive Order 12866 (58 FR 51735, October 4, 1993), this... Concerning Regulations That Significantly Affect Energy Supply, Distribution, or Use'' (66 FR 28355, May...

  7. 77 FR 43301 - Medicaid Program; Disproportionate Share Hospital Allotments and Institutions for Mental Diseases...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-24

    ... Disproportionate Share Hospital Limits'' notice published in the January 3, 2011 Federal Register (76 FR 148). II... in the ``Background'' section of the January 3, 2011 Federal Register (76 FR 148) notice, the... (75 FR 21314). The final FY 2011 DSH allotments being published in this notice are approximately...

  8. 76 FR 148 - Medicaid Program; Final FY 2009 and Preliminary FY 2011 Disproportionate Share Hospital...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-03

    ... limits determined. The notice published in the Federal Register on December 19, 2008 (73 FR 77704... correction notice published in the Federal Register on January 26, 2009 (74 FR 4439) provided a correction to.... Finally, the notice published in the Federal Register on April 23, 2010 (75 FR 21314), included...

  9. 77 FR 217 - Medicare and Medicaid Programs: Hospital Outpatient Prospective Payment; Ambulatory Surgical...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-04

    ..., Hospital Value-Based Purchasing (VBP) Program Issues. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. 2011-28612 of November 30, 2011 (76 FR 74122), (hereinafter referred to as the CY 2012 OPPS/ASC final... they had been included in the CY 2012 OPPS/ASC final rule with comment period (76 FR 74122)...

  10. 75 FR 30756 - Medicare Program; Supplemental Proposed Changes to the Hospital Inpatient Prospective Payment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-02

    ..., 2010. DATES: The comment period for the proposed rule FR Doc. No. 2010-12567, published elsewhere in...) 786-4487. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. 2010-12567 filed May 21, 2010, there are... the FY 2011 IPPS/LTCH PPS proposed rule (75 FR 23852).'' Therefore, in section III. of this...

  11. 75 FR 78916 - Approval and Promulgation of State Air Quality Plans for Designated Facilities and Pollutants...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-17

    ... 10, 2004 edition of the Federal Register and codified in 40 CFR Part 62, subpart VV. (69 FR 54756... (58 FR 51735, October 4, 1993), this action is not a ``significant regulatory action'' and therefore... Energy Supply, Distribution, or Use'' (66 FR 28355, May 22, 2001). This action merely approves State...

  12. 76 FR 35959 - Capital Adequacy Guidelines; Small Bank Holding Company Policy Statement: Treatment of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-21

    ... Board issued an interim final rule (CPP interim rule) (74 FR 26077) to allow bank holding companies that... Board published a final rule on the capital treatment of the Senior Perpetual Preferred Stock. See 74 FR.... See 74 FR 26077, 26079 (June 1, 2009). The Board received two comments on the CPP interim rule....

  13. 77 FR 25405 - Modification to Content Published by Import Administration in the Federal Register

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-30

    ... FR and identify the content that will remain in the FR notices and the content that will be included... required to publish certain notices in the Federal Register (FR). Following review of the requirements of the Act and our regulations, we have identified ways to shorten the length of many of our...

  14. 78 FR 44124 - Agency Information Collection Activities: Proposed Collection; Comment Request; Format and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ... 0910-0340)--Extension In the Federal Register of March 17, 1999 (64 FR 13254) (the 1999 labeling final.... On June 20, 2000 (65 FR 38191), we published a Federal Register final rule that required all OTC drug... May 16, 2005, or sooner (65 FR 38191 at 38193). Currently marketed OTC drug products are...

  15. 77 FR 16234 - Agency Information Collection Activities; Submission for Office of Management and Budget Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-20

    ... (71 FR 3922), and was effective on June 30, 2006, amended FDA's regulations governing the format and... final rule (71 FR 3964-3967) (currently approved under OMB control number 0910-0572) estimated the.... In the Federal Register of December 19, 2011 (76 FR 78668), FDA published a 60-day notice...

  16. 75 FR 31448 - Agency Information Collection Activities; Proposed Collection; Comment Request; Format and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-03

    ...)--Reinstatement In the Federal Register of March 17, 1999 (64 FR 13254), we amended our ] regulations governing... are already required to be in compliance with these labeling regulations. On June 20, 2000 (65 FR... sooner (65 FR 38191 at 38193). Sunscreen products do not have to comply with the regulations until...

  17. 75 FR 49495 - Agency Information Collection Activities; Submission for Office of Management and Budget Review...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Federal Register of March 17, 1999 (64 FR 13254) (the 1999 labeling final rule), we amended our... published in the Federal Register of April 5, 2002 (67 FR 16304), the agency delayed the compliance dates... Sec. 201.66(d)(10) (67 FR 16304 at 16306). The agency issued this delay in order to develop...

  18. 78 FR 12760 - Guidance for Industry on Labeling for Human Prescription Drug and Biological Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-25

    ... January 24, 2006 (71 FR 3998), FDA announced the availability of final guidances on the content and format... of March 23, 2010 (75 FR 13766), FDA announced the availability of final guidance on the content and..., 2011 (76 FR 63303), FDA announced the availability of final guidance on the content and format of...

  19. 76 FR 44463 - Children's Products Containing Lead; Technological Feasibility of 100 ppm for Lead Content...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-26

    ... with the limit. On July 27, 2010, we published a notice in the Federal Register (75 FR 43942... received in response to the July 27, 2010 notice, we published a notice in the Federal Register (76 FR 4641... 16, 2011. On March 9, 2011, we published another notice in the Federal Register (76 FR...

  20. 76 FR 63303 - Guidance for Industry on Warnings and Precautions, Contraindications, and Boxed Warning Sections...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-12

    ... Federal Register of January 24, 2006 (71 FR 3999), FDA issued final guidances on the content and format of...-63304] [FR Doc No: 2011-26297] DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration... October 19, 2009 (74 FR 53507), FDA issued a final guidance on determining established pharmacologic...

  1. 75 FR 26121 - Regulation of Fuels and Fuel Additives: Alternative Affirmative Defense Requirements for Ultra...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-11

    ... A. Executive Order 12866: Regulatory Planning and Review Under Executive Order (EO) 12866 (58 FR... implications, as specified in Executive Order 13175 (65 FR 67249, November 9, 2000). This rule applies to... Children From Environmental Health Risks and Safety Risks EPA interprets EO 13045 (62 FR 19885, April...

  2. 76 FR 45705 - Approval and Promulgation of Air Quality Implementation Plans; Pennsylvania; Diesel-Powered Motor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-01

    ... review by the Office of Management and Budget under Executive Order 12866 (58 FR 51735, October 4, 1993... Executive Order 13132 (64 FR 43255, August 10, 1999); Is not an economically significant regulatory action based on health or safety risks subject to Executive Order 13045 (62 FR 19885, April 23, 1997); Is not...

  3. 75 FR 26653 - Approval and Promulgation of Air Quality Implementation Plans; Reformulated Gasoline and Diesel...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-12

    ... 26653-26662] [FR Doc No: 2010-11005] ENVIRONMENTAL PROTECTION AGENCY 40 CFR Part 52 [EPA-R09-OAR-2009..., 2009 (74 FR 33196), EPA proposed to approve revisions to the California regulations for reformulated..., 2009, as revisions to the California SIP. On July 21, 2009 (74 FR 35838), EPA issued a correction...

  4. 76 FR 33660 - Airworthiness Directives; Austro Engine GmbH Model E4 Diesel Piston Engines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-09

    ... 2010-23-09, Amendment 39-16498 (75 FR 68179, November 5, 2010), for Austro Engine GmbH model E4 diesel...'' under the DOT Regulatory Policies and Procedures (44 FR 11034, February 26, 1979), (3) Will not affect... FR 68179, November 5, 2010), and adding the following new AD: Austro Engine GmbH: Docket No....

  5. 76 FR 54373 - Airworthiness Directives; Austro Engine GmbH Model E4 Diesel Piston Engines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-01

    ... certain publication listed in this AD as of November 22, 2010 (75 FR 68179, November 5, 2010). ADDRESSES...-16498 (75 FR 68179, November 5, 2010). That AD applies to the specified products. The NPRM published in the Federal Register on June 9, 2011 (76 FR 33660). That NPRM proposed to continue to require...

  6. 77 FR 72746 - Regulation of Fuels and Fuel Additives: Modifications to Renewable Fuel Standard and Diesel...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-06

    ....1451, 80.1453, 80.1454, and 80.1460 published at 77 FR 61281 (October 9, 2012). Because EPA did not...: EPA published a direct final rule on October 9, 2012 (77 FR 61281) to amend provisions in the... the parallel proposed rule also published on October 9, 2012 (77 FR 61313). As stated in the...

  7. 78 FR 63852 - Airworthiness Directives; Hamilton Standard Division and Hamilton Sundstrand Corporation Propellers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-25

    ... October 25, 2013. The effective date for AD 2013-16-10 (78 FR 49660, August 15, 2013) remains September 19... 2013-16-10, Amendment 39-17548 (78 FR 49660, August 15, 2013), currently requires incorporating... published in the Federal Register. The effective date for AD 2013-16-10 (78 FR 49660, August 15,...

  8. 77 FR 50966 - Approval and Promulgation of Air Quality Implementation Plans; Maryland; Attainment Demonstration...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-23

    ... Phase 2 Implementation Rule published on November 29, 2005 (70 FR 71612) specifies that states must... attainment date (November 29, 2005, 70 FR 71612, and 40 CFR 51.908). On April 30, 2004 (69 FR 23951 and 40... control, Nitrogen dioxide, Reporting and recordkeeping requirements, Volatile organic compounds....

  9. Ballistic transport and quantum interference in InSb nanowire devices

    NASA Astrophysics Data System (ADS)

    Li, Sen; Huang, Guang-Yao; Guo, Jing-Kun; Kang, Ning; Caroff, Philippe; Xu, Hong-Qi

    2017-02-01

    Not Available Project supported by the National Key Basic Research and Development Project of the Ministry of Science and Technology of China (Grant No. 2016YFA0300601) and the National Natural Science Foundation of China (Grant Nos. 91221202, 91421303, 11374019, and 61321001).

  10. Threading dislocation degradation of InSb to InAsSb subchannel double heterostructures

    NASA Astrophysics Data System (ADS)

    Devakadaksham, Godwinraj; Kumar, Mohan; Sarkar, Chandan Kumar

    2015-07-01

    In this paper, we report the transport properties of an InAsSb quantum well channel double heterostructure. We propose a structure of the InAsSb quantum well with an AlInSb/AlInSb double matrix barrier. The quantum well is investigated for an Al x In1- x Sb/Al0.24In0.76Sb/In y As1- y Sb/Al0.24In0.76Sb composition over a variable interpolation range ( y = 0-0.3) of the InAsSb channel region. With the smallest threading density of 1.4 × 108 cm-2 and the highest electron mobility of 43000 cm2/Vs at 15 nm quantum well thickness, a small lattice mismatch is shown between the double matrix AlInSb barrier and the InAsSb channel. This is the lowest threading dislocation density and the highest mobility among those reported for all InSb-based heterostructure devices. This device is further proven to be defec-free due to better lattice match with the InAsSb channel quantum well. Therefore, this device could be used for a wide range of ultra-low power applications. [Figure not available: see fulltext.

  11. Spin resonant optical mixing in InSb — CW-measurements and transient effects

    NASA Astrophysics Data System (ADS)

    Pascher, H.; Ebert, R.; Häfele, H. G.

    1980-01-01

    Optical four-wave mixing due to the resonant spin nonlinearity in n-InSb was observed in magnetic fields up to 1.4 T. The mixing of two CO-laser frequencies ω 1 and ω2 = ω1 - Δω yields radiation with frequencies ω1 + 2 Δω, ω1 + Δω, ω1 - 2 Δω, and ω1 - 3 Δω. We found the resonant contribution to the third order nonlinear susceptibility arising from the spin-flip interaction to increase by more than two orders of magnitude when ω 1 is varied from 1760 cm -1 to 1896 cm -1. With the lasers working simultaneously Q-switched we observed radiation at ω1 + Δω and ω1 - 2 Δω due to the mixing caused by the nonparabolicity of the conduction electrons even without an external magnetic field. At the resonant magnetic field the intensity of the mixed radiation is increased by more than one order of magnitude and is also observed when the laser pulses do not hit the sample simultaneously as long as the time difference between the two pulses does not exceed 450 ns. This points to a spin dephasing time T2 of about 100 ns.

  12. Materials Data on InSb (SG:186) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-09-15

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  13. Spin-orbit coupling in InSb semiconductor nanowires: physical limits for majorana states

    NASA Astrophysics Data System (ADS)

    Sipahi, Guilherme; de Campos, Tiago; Faria Junior, Paulo E.; Gmitra, Martin; Zutic, Igor; Fabian, Jaroslav

    The search for Majorana fermions is a hot subject nowadays. One of the possibilities for their realization is the use of semiconductor nanowires and p-type superconductors coupled together. Following this path, the first step is the determination of realistic band structures of these wires including spin-orbit effects. To consider the spin-orbit effects, its common to use models that take into account only the first conduction band. Although these reduced models have been successfully used to determine some physical properties, a more realistic description of the spin-orbit coupling between the bands is required to further investigate possible ways to realize the Majorana fermions. In this study we use a state of the art 14 band k.p formalism together with the envelope function approach to determine the band structure of InAs semiconductor nanowires and analyze how the quantum confinement change the coupling between the bands. As a result we have extracted the effective masses and the spin-orbit splitting for a large range of nanowire radial sizes and for several conduction bands that can be used in effective models. FAPESP (No. 2011/19333-4, No. 2012/05618-0 and No. 2013/23393-8), CNPq (No. 246549/2012-2 and No. 149904/2013-4), CAPES(PVE 88881.068174/2014-01) and DFG SFB 689.

  14. Materials Data on InSb (SG:63) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-02-05

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  15. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  16. Isotope shifts in francium isotopes Fr-213206 and 221Fr

    NASA Astrophysics Data System (ADS)

    Collister, R.; Gwinner, G.; Tandecki, M.; Behr, J. A.; Pearson, M. R.; Zhang, J.; Orozco, L. A.; Aubin, S.; Gomez, E.; FrPNC Collaboration

    2014-11-01

    We present the isotope shifts of the 7 s1 /2 to 7 p1 /2 transition for francium isotopes 206 -213Fr with reference to 221Fr collected from two experimental periods. The shifts are measured on a sample of atoms prepared within a magneto-optical trap by a fast sweep of radio-frequency sidebands applied to a carrier laser. King plot analysis, which includes literature values for 7 s1 /2 to 7 p3 /2 isotope shifts, provides a field shift constant ratio of 1.0520(10) and a difference between the specific mass shift constants of 170(100) GHz amu between the D1 and D2 transitions, of sufficient precision to differentiate between ab initio calculations.

  17. 7 CFR 29.3068 - Tannish-red color (FR).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 2 2013-01-01 2013-01-01 false Tannish-red color (FR). 29.3068 Section 29.3068 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Type 93) § 29.3068 Tannish-red color (FR). A light red shaded toward tan....

  18. 7 CFR 29.3068 - Tannish-red color (FR).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 2 2014-01-01 2014-01-01 false Tannish-red color (FR). 29.3068 Section 29.3068 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Type 93) § 29.3068 Tannish-red color (FR). A light red shaded toward tan....

  19. 7 CFR 29.3068 - Tannish-red color (FR).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Tannish-red color (FR). 29.3068 Section 29.3068 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Type 93) § 29.3068 Tannish-red color (FR). A light red shaded toward tan....

  20. 78 FR 62352 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-18

    ... payment card network surveys, supporting statement, and other documentation are available on the Board's.... Reporters: Issuers of debit cards (FR 3064a) and payment card networks (FR 3064b). Estimated annual... networks in connection with the authorization, clearance or settlement of electronic debit transaction...

  1. 77 FR 5570 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-03

    ..., 66 FR 15755 (Mar. 20, 2001); Federal Bureau of Investigation (FBI), ``FBI Alcoholism Program,'' JUSTICE/FBI-014, 52 FR 47251 (Dec. 11, 1987); Federal Bureau of Prisons (BOP), ``Employee Assistance..., Washington, DC 20530. FBI: EAP Administrator, Federal Bureau of Investigation, 935 Pennsylvania Ave....

  2. 78 FR 61805 - National Breast Cancer Awareness Month, 2013

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-04

    ... [Federal Register Volume 78, Number 193 (Friday, October 4, 2013)] [Presidential Documents] [Pages 61805-61806] [FR Doc No: 2013-24382] #0; #0; #0; Presidential Documents #0; #0; #0;#0;Federal Register... States of America the two hundred and thirty- eighth. (Presidential Sig.) [FR Doc. 2013-24382 Filed...

  3. 77 FR 29674 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-18

    ... [Federal Register Volume 77, Number 97 (Friday, May 18, 2012)] [Notices] [Pages 29674-29675] [FR Doc No: 2012-12120] DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National... Policy. [FR Doc. 2012-12120 Filed 5-17-12; 8:45 am] BILLING CODE 4140-01-P...

  4. 77 FR 31030 - National Cancer Institute; Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-24

    ... [Federal Register Volume 77, Number 101 (Thursday, May 24, 2012)] [Notices] [Page 31030] [FR Doc No: 2012-12650] DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National Cancer..., Office of Federal Advisory Committee Policy. [FR Doc. 2012-12650 Filed 5-23-12; 8:45 am] BILLING...

  5. 75 FR 26761 - National Cancer Institute; Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-12

    ... [Federal Register Volume 75, Number 91 (Wednesday, May 12, 2010)] [Notices] [Pages 26761-26762] [FR Doc No: 2010-11313] DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National..., Director, Office of Federal Advisory Committee Policy. [FR Doc. 2010-11313 Filed 5-11-10; 8:45 am]...

  6. 78 FR 31570 - National Cancer Institute: Amended Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-24

    ... [Federal Register Volume 78, Number 101 (Friday, May 24, 2013)] [Notices] [Page 31570] [FR Doc No: 2013-12376] DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National Cancer... Advisory Committee Policy. [FR Doc. 2013-12376 Filed 5-23-13; 8:45 am] BILLING CODE 4140-01-P...

  7. 75 FR 62297 - National Breast Cancer Awareness Month, 2010

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-08

    ... [Federal Register Volume 75, Number 195 (Friday, October 8, 2010)] [Presidential Documents] [Pages 62297-62298] [FR Doc No: 2010-25572] #0; #0; #0; Presidential Documents #0; #0; #0;#0;Federal Register... of America the two hundred and thirty-fifth. (Presidential Sig.) [FR Doc. 2010-25572 Filed 10-7-10;...

  8. 78 FR 31569 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-24

    ... [Federal Register Volume 78, Number 101 (Friday, May 24, 2013)] [Notices] [Pages 31569-31570] [FR Doc No: 2013-12377] DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National... 20, 2013. Melanie J. Gray, Program Analyst, Office of Federal Advisory Committee Policy. [FR...

  9. 78 FR 31909 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-28

    ... Confidential Financial Disclosure Report (August 9, 1996, 61 FR 41572). Reason: The report is covered by the Systems of Records Notices OGE/GOVT-1, Executive Branch Personnel Public Financial Disclosure Reports and..., 2003, 68 FR 24744) and OGE/GOVT-2 Executive Branch Confidential Financial Disclosure Reports...

  10. 78 FR 34120 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-06

    ... endangered species, we found that (1) the application was filed in good faith, (2) The granted permit would..., 2012. 2012. 704654 Scovill Zoo 77 FR 51819; August 27, October 31, 2012. 2012. 81326A Gomez Development.... 2012. 84250A Burmont, Inc 77 FR 61627; October 10, November 16, 2012. 2012. 681252 Cincinnati...

  11. 77 FR 75434 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-20

    ... certain BHCs. Estimated annual reporting hours: FR Y-14A: Summary, 50,160 hours; Macro scenario, 1,860... per response: FR Y-14A: Summary, 836 hours; Macro scenario, 31 hours; CCR, 382 hours; Basel III/Dodd... proposes revising the reporting frequency from annual to semi- annual for the Summary and Macro...

  12. 75 FR 29586 - Submission for OMB Review: Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-26

    ... [Federal Register Volume 75, Number 101 (Wednesday, May 26, 2010)] [Notices] [Page 29586] [FR Doc No: 2010-12641] DEPARTMENT OF LABOR Office of the Secretary Submission for OMB Review: Comment.... [FR Doc. 2010-12641 Filed 5-25-10; 8:45 am] BILLING CODE 4510-24-P...

  13. 75 FR 36393 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-25

    ...; discussion groups: Two times a year. FR 1373b, small-panel survey: Two times a year; large-panel survey, one...; discussion groups, 60 hours. FR 1373b: small-panel, 6 hours; large- panel 32 hours. Estimated average hours... techniques or other forms of information technology. DATES: Comments must be submitted on or before August...

  14. 77 FR 71777 - Trade Mission to Egypt and Kuwait

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-04

    ... International Trade Administration Trade Mission to Egypt and Kuwait AGENCY: International Trade Administration... Trade Mission to Egypt and Kuwait March 10-14, 2013, published at 77 FR 33439, June 6, 2012 to revise... Mission to Egypt and Kuwait March 10-14, 2013, published at 77 FR 33439, June 6, 2012. Due to...

  15. 76 FR 62447 - Importer of Controlled Substances; Notice of Registration

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-07

    ..., 2011, and published in the Federal Register on June 16, 2011, 76 FR 35241, Chattem Chemicals, Inc... customers. As explained in the Correction to Notice of Application pertaining to Rhodes Technologies, 72 FR... the registration of Chattem Chemicals, Inc. to import the basic classes of controlled substances...

  16. 77 FR 8114 - Plan for Retrospective Analysis of Existing Rules

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-14

    ... (Oct. 25, 2011). It received one comment on the preliminary plan from the law firm of Hughes Hubbard... and the identification of specific rules to be included in the plan. 76 FR 66004 (Oct. 25, 2011) and... documents filed with the agency will be filed by electronic means. See 76 FR 61937 (Oct. 6, 2011)....

  17. 76 FR 76730 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-08

    ... estimates of bank credit, balance sheet data for the U.S. banking industry, sources and uses of banks' funds... respondent data are given confidential treatment (5 U.S.C. 552 (b)(4)). The FR 2835 data, however, are not given confidential treatment. Abstract: The FR 2835 collects information from a sample of...

  18. 75 FR 6558 - Unfair or Deceptive Acts or Practices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-10

    ..., and the effective date for the amendments was July 1, 2010. 74 FR 5498 (January 29, 2009) (UDAP Rule... amendments to the UDAP Rule. 74 FR 20804 (May 5, 2009). List of Subjects in 12 CFR Part 706 Credit, Credit... payments pursuant to a pension, retirement, or disability program. (f) Household goods. Clothing,...

  19. 76 FR 20339 - Privacy Act of 1974; Systems of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-12

    ... (February 20, 1996, 61 FR 6427). Dated: April 7, 2011. Morgan F. Park, Alternate OSD Federal Register Liaison Officer, Department of Defense S800.20 System name: Military Clothing Database (January 31, 2008, 73 FR 5826). Changes: * * * * * System location: Delete entry and replace with ``Data...

  20. 75 FR 62436 - Notice of Issuance of Regulatory Guide

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-08

    ... Plants.'' FOR FURTHER INFORMATION CONTACT: Bruce P. Lin, Division of Engineering, Office of Nuclear... Engineering, Office of Nuclear Regulatory Research. [FR Doc. 2010-25405 Filed 10-7-10; 8:45 am] BILLING CODE...] [FR Doc No: 2010-25405] NUCLEAR REGULATORY COMMISSION [NRC-2010-0097] Notice of Issuance of...

  1. 78 FR 9691 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-11

    ..., Annually; Liquidity risk reports, monthly. Reporters: Bank holding companies, state member banks, branches... Principal or Municipal Securities Representative Associated with a Bank Municipal Securities Dealer; Uniform... Bank Municipal Securities Dealer. Agency form number: FR MSD-4; FR MSD-5. OMB control number:...

  2. 78 FR 22415 - Amendment of Class E Airspace; Astoria, OR

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-16

    ... Astoria, OR Astoria Regional Airport, Astoria, OR (Lat. 46 09'29'' N., long. 123 52'43'' W.) Seaside...'' under DOT Regulatory Policies and Procedures (44 FR 11034; February 26, 1979); and (3) does not warrant... FR 9565, 3 CFR, 1959-1963 Comp., p. 389. Sec. 71.1 0 2. The incorporation by reference in 14 CFR...

  3. 75 FR 71083 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-22

    ... Responsibilities for Maintaining Records About Individual,'' dated February 8, 1996 (February 20, 1996, 61 FR 6427..., 2009, 74 FR 7671) CHANGES: * * * * * SYSTEM LOCATION: Delete entry and replace with ``Student records... INDIVIDUALS COVERED BY THE SYSTEM: Delete entry and replace with ``Student records cover present, former,...

  4. 76 FR 51400 - Importer of Controlled Substances; Notice of Registration

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-18

    ... effect on May 1, 1971. DEA has investigated Rhodes Technologies to ensure that the company's registration... 28, 2011, and published in the Federal Register on May 4, 2011 76 FR 25374, Rhodes Technologies, 498... explained in the Correction to Notice of Application pertaining to Rhodes Technologies, 72 FR 3417...

  5. 7 CFR 29.1044 - Orange Red (FR).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Orange Red (FR). 29.1044 Section 29.1044 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1044 Orange Red (FR). A yellowish red....

  6. 7 CFR 29.1044 - Orange Red (FR).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 2 2013-01-01 2013-01-01 false Orange Red (FR). 29.1044 Section 29.1044 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1044 Orange Red (FR). A yellowish red....

  7. 7 CFR 29.1044 - Orange Red (FR).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 2 2014-01-01 2014-01-01 false Orange Red (FR). 29.1044 Section 29.1044 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1044 Orange Red (FR). A yellowish red....

  8. 78 FR 79658 - Environmental Impact Statement; Animal Carcass Management

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79658] [FR..., the Animal and Plant Health Inspection Service published in the Federal Register (78 FR 63959-63960... 20th day of December 2013 . Kevin Shea, Administrator, Animal and Plant Health Inspection Service....

  9. 78 FR 79728 - Proposed Collection; Comment Request for Regulation Project

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79728] [FR Doc No: 2013-31346] DEPARTMENT OF THE TREASURY Internal Revenue Service Proposed Collection; Comment... Analyst. [FR Doc. 2013-31346 Filed 12-30-13; 8:45 am] BILLING CODE 4830-01-P...

  10. 78 FR 79672 - New England Fishery Management Council; Public Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Pages 79672-79673] [FR Doc No: 2013-31310] DEPARTMENT OF COMMERCE National Oceanic and Atmospheric Administration RIN... Fisheries Service. [FR Doc. 2013-31310 Filed 12-30-13; 8:45 am] BILLING CODE 3510-22-P...

  11. 78 FR 79661 - Gallatin County Resource Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-31

    ... [Federal Register Volume 78, Number 251 (Tuesday, December 31, 2013)] [Notices] [Page 79661] [FR Doc No: 2013-31295] DEPARTMENT OF AGRICULTURE Forest Service Gallatin County Resource Advisory... case by case basis. Dated: December 19, 2013. Mary C Erickson, Forest Supervisor. [FR Doc....

  12. 75 FR 13139 - The National Environmental Policy Act Procedures Manual

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-18

    ... COMMISSION The National Environmental Policy Act Procedures Manual AGENCY: The National Indian Gaming... comments on the Draft NEPA Procedures Manual published in the Federal Register on December 4, 2009 (74 FR... March 4, 2010 (75 FR 3756). ] DATES: The comment period for the Draft NEPA Procedures Manual is...

  13. 75 FR 3756 - The National Environmental Policy Act Procedures Manual

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-22

    ... National Indian Gaming Commission The National Environmental Policy Act Procedures Manual AGENCY: National... period for comments on the Draft NEPA Procedures Manual published in the Federal Register on December 4, 2009 (74 FR 63765, 74 FR 63787). DATES: The comment period for the Draft NEPA Procedures Manual...

  14. 77 FR 74507 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-14

    ... Fish and Wildlife Service Endangered Species; Marine Mammals; Issuance of Permits AGENCY: Fish and..., marine mammals, or both. We issue these permits under the Endangered Species Act (ESA) and Marine Mammal... Gary Benmark 77 FR 41198; July 12, 2012 August 18, 2012. 045532 NOAA/National Marine 77 FR 41198;...

  15. 77 FR 50626 - Changes in Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-22

    ... 12866 of September 30, 1993, Regulatory Planning and Review, 58 FR 51735. Executive Order 13132... seq.; Reorganization Plan No. 3 of 1978, 3 CFR, 1978 Comp., p. 329; E.O. 12127, 44 FR 19367, 3 CFR... be used to calculate flood insurance premium rates for new buildings and their contents. DATES:...

  16. 76 FR 58411 - Changes in Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-21

    ... 12866 of September 30, 1993, Regulatory Planning and Review, 58 FR 51735. Executive Order 13132... et seq.; Reorganization Plan No. 3 of 1978, 3 CFR, 1978 Comp., p. 329; E.O. 12127, 44 FR 19367, 3 CFR... be used to calculate flood insurance premium rates for new buildings and their contents. DATES:...

  17. 77 FR 30219 - Changes in Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-22

    ... and Review, 58 FR 51735. Executive Order 13132, Federalism. This interim rule involves no policies..., 1978 Comp., p. 329; E.O. 12127, 44 FR 19367, 3 CFR, 1979 Comp., p. 376. Sec. 65.4 0 2. The tables... modified BFEs for new buildings and their contents. DATES: These modified BFEs are currently in effect...

  18. Solar System Tests of f(R) Gravity

    NASA Astrophysics Data System (ADS)

    Guo, Jun-Qi

    2014-03-01

    In this paper, we revisit the solar system tests of f(R) gravity. When the sun sits in a vacuum, the field f‧ is light, which leads to a metric different from the observations. We reobtain this result in a simpler way by directly focusing on the equations of motion for f(R) gravity in the Jordan frame (JF). The discrepancy between the metric in the f(R) gravity and the observations can be alleviated by the chameleon mechanism. The implications from the chameleon mechanism on the functional form f(R) are discussed. Considering the analogy of the solar system tests to the false vacuum decay problem, the effective potentials in different cases are also explored. The combination of analytic and numerical approaches enables us to ascertain whether an f(R) model can pass the solar system tests or not.

  19. Cosmological viable mimetic f(R) and f(R, T) theories via Noether symmetry

    NASA Astrophysics Data System (ADS)

    Momeni, D.; Myrzakulov, R.; Güdekli, E.

    2015-07-01

    Extended f(R) theories of gravity have been investigated from the symmetry point of view. We briefly has been investigated Noether symmetry of two types of extended f(R) theories: f(R, T) theory, in which curvature is coupled non-minimally to the trace of energy-momentum tensor Tμν and mimetic f(R) gravity, a theory with a scalar field degree of freedom, but ghost-free and with internal conformal symmetry. In both cases we write point-like Lagrangian for flat Friedmann-Lemaitre-Robertson-Walker (FLRW) cosmological background in the presence of ordinary matter. We have been shown that some classes of models existed with Noether symmetry in these viable extensions of f(R) gravity. As a motivated idea, we have been investigating the stability of the solutions and the bouncing and ΛCDM models using the Noether symmetries. We have been shown that in mimetic f(R) gravity bouncing and ΛCDM solutions are possible. Also a class of solutions with future singularities has been investigated.

  20. In Vitro Hemodynamic Evaluation of Five 6 Fr and 8 Fr Arterial Cannulae in Simulated Neonatal Cardiopulmonary Bypass Circuits.

    PubMed

    Wang, Shigang; Palanzo, David; Kunselman, Allen R; Ündar, Akif

    2016-01-01

    The objective of this study was to evaluate five small-bore arterial cannulae (6Fr and 8Fr) in terms of pressure drop and hemodynamic performance in simulated neonatal cardiopulmonary bypass (CPB) circuits. The experimental circuits consisted of a Jostra HL-20 roller pump, a Terumo Capiox Baby FX05 oxygenator with integrated arterial filter, an arterial and a venous tubing (1/4, 3/16, or 1/8 in × 150 cm), and an arterial cannula (Medtronic Bio-Medicus 6Fr and 8Fr, Maquet 6Fr and 8Fr, or RMI Edwards 8Fr). The circuit was primed using lactated Ringer's solution and heparinized packed human red blood cells (hematocrit 30%). Trials were conducted at different flow rates (6Fr: 200-400 mL/min; 8Fr: 200-600 mL/min) and temperatures (35 and 28°C). Flow and pressure data were collected using a custom-based data acquisition system. Higher circuit pressure, circuit pressure drop, and hemodynamic energy loss across the circuit were recorded when using small-bore arterial cannula and small inner diameter arterial tubing in a neonatal CPB circuit. The maximum preoxygenator pressures reached 449.7 ± 1.0 mm Hg (Maquet 6Fr at 400 mL/min), and 395.7 ± 0.4 mm Hg (DLP 8Fr at 600 mL/min) when using 1/8 in ID arterial tubing at 28°C. Hypothermia further increased circuit pressure drop and hemodynamic energy loss. Compared with the others, the RMI 8Fr arterial cannula had significantly lower pressure drop and energy loss. Maquet 6Fr arterial cannula had a greater pressure drop than the DLP 6Fr. A small-bore arterial cannula and arterial tubing created high circuit pressure drop and hemodynamic energy loss. Appropriate arterial cannula and arterial tubing should be considered to match the expected flow rate. Larger cannula and tubing are recommended for neonatal CPB. Low-resistance neonatal arterial cannulae need to be developed.

  1. f(R) gravity and chameleon theories

    SciTech Connect

    Brax, Philippe; Davis, Anne-Christine; Shaw, Douglas J.

    2008-11-15

    We analyze f(R) modifications of Einstein's gravity as dark energy models in the light of their connection with chameleon theories. Formulated as scalar-tensor theories, the f(R) theories imply the existence of a strong coupling of the scalar field to matter. This would violate all experimental gravitational tests on deviations from Newton's law. Fortunately, the existence of a matter dependent mass and a thin-shell effect allows one to alleviate these constraints. The thin-shell condition also implies strong restrictions on the cosmological dynamics of the f(R) theories. As a consequence, we find that the equation of state of dark energy is constrained to be extremely close to -1 in the recent past. We also examine the potential effects of f(R) theories in the context of the Eoet-wash experiments. We show that the requirement of a thin shell for the test bodies is not enough to guarantee a null result on deviations from Newton's law. As long as dark energy accounts for a sizeable fraction of the total energy density of the Universe, the constraints that we deduce also forbid any measurable deviation of the dark energy equation of state from -1. All in all, we find that both cosmological and laboratory tests imply that f(R) models are almost coincident with a {lambda}CDM model at the background level.

  2. 75 FR 2159 - In the Matter of Certain Variable Speed Wind Turbines and Components Thereof; Termination of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-14

    ..., Connecticut (``GE'') on February 7, 2008. 73 FR 16910. The complaint alleged violations of section 337 of the... the intent finding underlying the ALJ's inequitable conduct determination. 72 FR 52975 (Oct. 15,...

  3. 75 FR 2515 - TRICARE, Formerly Known as the Civilian Health and Medical Program of the Uniformed Services...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-15

    ... Register on September 6, 1988, (53 FR 34285) set forth reimbursement changes that were effective for all... January 1, 1989. The final rule published in the Federal Register on July 1, 1993, (58 FR 35-400)...

  4. 75 FR 30065 - Arcelor Mittal, Including On-Site Leased Workers From Adecco, ESW, Inc., Guardsmark, Hudson...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-28

    ..., Hennepin, Illinois. The notice was published in the Federal Register on April 23, 2010 (75 FR 21355). The... published in the Federal Register on May 12, 2010 (75 FR 26793) At the request of the State, the...

  5. 78 FR 22895 - Test To Allow Customs Brokers To Pre-Certify Importers for Participation in the Importer Self...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-17

    ... their own compliance with customs laws and regulations on a continuing basis. See 67 FR 41298 (June 17... notice at 67 FR 41298 (June 17, 2002)) to both CBP and the ISA pre-certifier whom they select...

  6. 75 FR 54290 - Fisheries of the Northeastern United States; Scup Fishery; Adjustment to the 2010 Winter II Quota

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-07

    .... SUPPLEMENTARY INFORMATION: NMFS published a final rule in the Federal Register on November 3, 2003 (68 FR 62250... increase table (table 4) published in the 2010 final scup specifications (74 FR 67978, December 22,...

  7. 75 FR 82420 - Self-Regulatory Organizations, The NASDAQ Stock Market LLC; Order Approving Proposed Rule Change...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-30

    ... Act Release No. 63239 (November 3, 2010), 75 FR 68846. \\4\\ See Letters from Floyd I. Wittlin and Ann F.... \\6\\ See Securities Exchange Act Release No. 58228 (July 25, 2008), 73 FR 44794 (July 31,...

  8. 78 FR 48758 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-09

    ... Release Nos. 66951 (May 9, 2012), 77 FR 28647 (May 15, 2012) (SR-NASDAQ-2012-055) (establishing fee); 67292 (June 28, 2012), 77 FR 39773 (July 5, 2012) (SR-NASDAQ-2012- 073) (modifying terms and...

  9. 77 FR 77092 - Certain Devices for Improving Uniformity Used in a Backlight Module and Components Thereof and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-31

    ... (collectively ``ITRI''). 76 FR 56796-97 (Sept. 14, 2011). The complaint alleges violations of section 337 in the... filed. See 77 FR 65579 (Oct. 29, 2012). Having examined the record of this investigation, including...

  10. 75 FR 11920 - General Electric Lighting-Ravenna Lamp Plant, Lighting Division, Including On-Site Leased Workers...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-12

    ... Technologies, Ravenna, Ohio. The notice was published in the Federal Register on November 17, 2009 (74 FR 59252... Register on September 11, 2007 (72 FR 51844) In order to avoid an overlap in worker group coverage,...

  11. 76 FR 77552 - Certain Light-Emitting Diodes and Products Containing Same; Determination Not To Review an...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-13

    ... August 18, 2011, based on a ] complaint filed by SLED. 76 FR 51396-97 (Aug. 18, 2011). A corrected Notice... Investigations will not participate as a party in this investigation. 76 FR 52348-49 (Aug. 22, 2011)....

  12. 77 FR 21527 - Foreign-Trade Zone 18-San Jose, CA Application for Reorganization Under Alternative Site Framework

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-10

    ... Alternative Site Framework An application has been submitted to the Foreign-Trade Zones (FTZ) Board (the Board... alternative site framework (ASF) adopted by the Board (74 FR 1170, 1/12/2009 (correction 74 FR 3987,...

  13. 77 FR 30505 - Cornell University, et al.; Notice of Decision on Applications for Duty-Free Entry of Scientific...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-23

    ...., Switzerland. Intended Use: See notice at 77 FR 23660, April 20, 2012. Comments: None received. Decision...: Dectris Ltd., Switzerland. Intended Use: See notice at 77 FR 23660, April 20, 2012. Comments:...

  14. 76 FR 13122 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Reef Fish Fishery of the Gulf of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-10

    ...: The comment period for the proposed rule that published on January 24, 2011 (76 FR 4084), and closed... (Magnuson-Stevens Act). On January 24, 2011 (76 FR 4084), NMFS published a proposed rule to establish a...

  15. 76 FR 78241 - Limitation of Duty-Free Imports of Apparel Articles Assembled in Haiti Under the Haitian...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-16

    ... Presidential Proclamations No. 8114, 72 FR 13655, 13659 (March 22, 2007), and No. 8596, 75 FR 68153 (November 4... Annex to the World Trade Organization Agreement on Textiles and Clothing (``ATC''), and the...

  16. 78 FR 79498 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-OpenDaylight...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... Act on July 1, 2013 (78 FR 39326). The last notification was filed with the Department on August 14... 16, 2013 (78 FR 56939). Patricia A. Brink, Director of Civil Enforcement, Antitrust Division....

  17. 77 FR 66907 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-07

    ... annual fee. \\7\\ Securities Exchange Act Release No. 55202 (January 30, 2007), 72 FR 6017 (February 8.... Securities Exchange Act Release No. 50838 (December 10, 2004), 69 FR 75578 (December 17, 2004) (approving...

  18. 77 FR 1125 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-09

    .... 54002 (June 16, 2006), 71 FR 36143 (June 23, 2006) (SR-NASD-2006-072) (increasing each of the fees by $30 per month); see also Securities Exchange Act Release No. 54260 (August 1, 2006), 71 FR...

  19. 78 FR 13928 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-01

    ... $0.01 per contract side. See Securities Exchange Act Release No. 68025 (October 10, 2012), 77 FR.... \\7\\ See Securities Exchange Act Release No. 68792 (January 31, 2013), 78 FR 8621 (February 6,...

  20. 78 FR 25403 - Proposed Amendment of Class E Airspace; Dayton, TN, Establishment of Class E Airspace; Cleveland...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-01

    ... Procedures (44 FR 11034; February 26, 1979); and (3) does not warrant preparation of a Regulatory Evaluation... read as follows: Authority: 49 U.S.C. 106(g); 40103, 40113, 40120; E.O. 10854, 24 FR 9565, 3 CFR,...

  1. 78 FR 10099 - Implementation of the Middle Class Tax Relief and Job Creation Act of 2012; Establishment of a...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-13

    ... the Commission's rules, which were published in the Federal Register on November 29, 2012, 77 FR 71131..., (77 FR 71131). The amended rules are necessary to implement the enforcement provisions of the...

  2. 76 FR 40652 - Approval and Promulgation of Implementation Plans; California Air Resources Board-In-Use Heavy...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-11

    ... implementing the provisions of MARPOL Annex VI through its ocean- going vessel rule (75 FR 22895). Under these.... See 75 FR 11880 (March 12, 2010) for the most recent related EPA announcement concerning...

  3. 75 FR 31816 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Diesel After...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-04

    ... published a notice in the Federal Register pursuant to Section 6(b) of the Act on February 26, 2009 (74 FR... in the Federal Register pursuant to Section 6(b) of the Act on March 24, 2010 (75 FR 14191)....

  4. 78 FR 69541 - Labor Certification Process for Logging Employment and Non-H-2A Agricultural Employment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-20

    ... Agricultural Employment of H-2A Aliens in the United States, 75 FR 6884 (Feb. 12, 2010). The effect of... rulemaking (NPRM). 74 FR 45906 (Sept. 4, 2009). After considering comments from the public on the...

  5. 78 FR 32238 - Foreign-Trade Zone 168-Dallas/Fort Worth, Texas Application for Reorganization/Expansion

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-29

    ... Order 603, 57 FR 47619, 10/19/92), on April 23, 1997 (Board Order 873, 62 FR 24081, 5/2/97), twice on May 8, 1997 (Board Orders 885 and 886, 62 FR 28445, 5/23/97), and on May 28, 1998 (Board Order 982, 63 FR 31200, 6/8/98). The zone currently consists of nine sites (one of which is temporary) totaling...

  6. 76 FR 41698 - Approval and Promulgation of Air Quality Implementation Plans; New Mexico; Section 110(a)(2...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-15

    ... 10 Woodwaste Burners.... 11/30/1995 9/26/1997, 62 FR 50514 Part 11 Asphalt Process 11/30/1995 9/26.../1995 9/26/1997, 62 FR 50514 Equipment-Sulfur Dioxide. Part 32 Coal Burning 11/30/1995 9/26/1997, 62 FR... 40 Sulfuric Acid 11/30/1995 9/26/1997, 62 FR 50514 Production Units- Sulfur Dioxide, Acid Mist...

  7. 75 FR 18134 - Function and Reliability Flight Testing for Turbine-Powered Airplanes Weighing 6,000 Pounds or Less

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19477-78) or you...'' (see 12 FR 2086, March 29, 1947). A related rulemaking included a reference to a study of accidents and maintenance issues of then relatively new model aircraft (see 12 FR 1028, February 13, 1947). That...

  8. 76 FR 64229 - Function and Reliability Flight Testing for Turbine-Powered Airplanes Weighing 6,000 Pounds or Less

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-18

    ... Certificated Weight.'' (See 69 FR 5239, February 3, 2004.) In that notice, we announced our intention to.... (See 75 FR 50853, August 18, 2010.) This final rule will eliminate the need for issuing special...-Powered Airplanes Weighing 6,000 Pounds or Less.'' (See 75 FR 18134, April 9, 2010.) In that NPRM,...

  9. 76 FR 76097 - Amendment to the International Traffic in Arms Regulations: Establishment of U.S. Munitions List...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-06

    ... List: Revising Descriptions of Items and Foreign Availability,'' 75 FR 76664 (December 9, 2010) and ``Revision to the United States Munitions List,'' 75 FR 76935 (December 10, 2010)). The notices also called... designed'' in the December 2010 ANPRM (75 FR 76935) and noted the term would be used minimally in the...

  10. 76 FR 2829 - Approval and Promulgation of Air Quality Implementation Plans; Virginia; Adoption of 8-hour Ozone...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-18

    ... NAAQS for ozone on March 27, 2008 (73 FR 16436). II. Summary of SIP Revision On September 27, 2010, the... Budget under Executive Order 12866 (58 FR 51735, October 4, 1993); Does not impose an information...); Does not have Federalism implications as specified in Executive Order 13132 (64 FR 43255, August...

  11. 78 FR 41013 - Medicare and Medicaid Programs; Home Health Prospective Payment System Rate Update for CY 2014...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-09

    ... INFORMATION CONTACT: Elmer Barksdale, (410) 786-1943. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. 2013-15766, published on Wednesday, July 3, 2013 (78 FR 40272), there was an error that is identified and... was ``-$18.6 Million'' instead of ``$18.6 Million.'' IV. Correction of Errors In FR Doc....

  12. 78 FR 19510 - Endangered and Threatened Wildlife and Plants; Initiation of 5-Year Reviews of 56 Species in...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-01

    ...)....... 62 FR 4172; 12/01/ Connie Rutherford, U.S. Fish and vetch. 1997. Listing and Wildlife Service... lentiginosus var. Fish slough milk- Endangered........ U.S.A. (CA)....... 63 FR 53596, 06/10/ Connie Rutherford... milk- Endangered........ U.S.A. (CA)....... 63 FR 43100; 08/12/ Connie Rutherford (above). vetch....

  13. 78 FR 72863 - Circular Welded Carbon Quality Steel Pipe From the People's Republic of China: Continuation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-04

    ...'') Review, 78 FR 33063 (June 3, 2013). \\2\\ See Circular Welded Carbon Quality Steel Pipe From the People's... FR 60849 (October 2, 2013). \\3\\ See Circular Welded Carbon-Quality Steel Pipe from China, 78 FR 70069... International Trade Administration Circular Welded Carbon Quality Steel Pipe From the People's Republic of...

  14. 78 FR 25756 - Announcement of Funding Awards for Office of Healthy Homes and Lead Hazard Control (OHHLHC) Grant...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-02

    ... URBAN DEVELOPMENT [Docket No. FR-5600-FA-04A; Docket No. FR-5600-FA-04B; Docket No. FR- 5600-FA-07... accordance with Section 102(a)(4)(C) of the Department of Housing and Urban Development Reform Act of 1989..., Department of Housing and Urban Development, Office of Healthy Homes and Lead Hazard Control, Room 8236,...

  15. 78 FR 41154 - Self-Regulatory Organizations; NYSE Arca, Inc.; Notice of Filing and Immediate Effectiveness of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-09

    ...), 71 FR 58460, 58461 (October 3, 2006) (SR-PCX- 2005-53). The Exchange also believes that the proposed... credit. \\14\\ See Securities Exchange Act Release No. 68848 (February 6, 2013), 78 FR 9985, 9986 (February... Securities Exchange Act Release No. 69566 (May 13, 2013), 78 FR 29193 (May 17, 2013) (SR-NASDAQ-2013-...

  16. 77 FR 56672 - Certain Light-Emitting Diodes and Products Containing the Same; Determination To Review a Final...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-13

    ...-56674] [FR Doc No: 2012-22517] INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-784] Certain... (``the `090 patent''); 7,151,283 (``the `283 patent''); and 7,271,425 (``the `425 patent''). 76 FR 40746... Secretary to the Commission. [FR Doc. 2012-22517 Filed 9-12-12; 8:45 am] BILLING CODE 7020-02-P...

  17. 76 FR 68793 - Advisory Committee on Reactor Safeguards (ACRS) Meeting of the ACRS Subcommittee on Planning and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-07

    ... [Federal Register Volume 76, Number 215 (Monday, November 7, 2011)] [Notices] [Page 68793] [FR Doc... participation in ACRS meetings were published in the Federal Register on October 17, 2011 (76 FR 64127-64128... Assistant, Reactor Safety Branch, Advisory Committee on Reactor Safeguards. [FR Doc. 2011-28738 Filed...

  18. 78 FR 70533 - Certain Activated Carbon From the People's Republic of China: Final Results of Antidumping Duty...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-26

    ...] [FR Doc No: 2013-28359] DEPARTMENT OF COMMERCE International Trade Administration [A-570-904] Certain... Fourth Antidumping Duty Administrative Review; 2011-2012, 78 FR 26748 (May 8, 2013) (``Preliminary...., 78 FR at 26749. \\4\\ See Memorandum to Christian Marsh, Deputy Assistant Secretary, Antidumping...

  19. 78 FR 41176 - Self-Regulatory Organizations; NASDAQ OMX PHLX LLC; Notice of Filing and Immediate Effectiveness...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-09

    ... Exchange Act Release Nos. 68460 (December 18, 2012), 77 FR 76145 (December 26, 2012) (SR-NYSEMKT-2012-41) (approval order) (``NYSE MKT filing''); 68461 (December 18, 2012), 77 FR 76155 (December 26, 2012) (SR-NYSEArca-2012-94) (approval order) (``NYSE Arca filing''); and 68606 (January 9, 2013), 78 FR 3065...

  20. 77 FR 10476 - Certain New Pneumatic Off-the-Road Tires From the People's Republic of China: Notice of Second...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-22

    ... FR 66349 (October 28, 2010). On October 7, 2011, the Department published its preliminary results of...--2010 Antidumping Duty Administrative Review and Intent to Rescind, in Part, 76 FR 62356 (October 7... Antidumping Duty Order, 77 FR 6536 (February 8, 2012). Extension of Time Limit for Final Results Section...

  1. 78 FR 36611 - Self-Regulatory Organizations; New York Stock Exchange LLC; Order Approving Proposed Rule Change...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-18

    ...), 78 FR 25327 (``Notice''). II. Description of the Proposal On July 30, 2007, FINRA's predecessor, the... Nos. 56148 (July 26, 2007), 72 FR 42146 (August 1, 2007) (order approving the Agreement); 56147 (July 26, 2007), 72 FR 42166 (August 1, 2007) (SR-NASD-2007- 054) (order approving the incorporation...

  2. 78 FR 48734 - Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Notice of Filing and Immediate Effectiveness...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-09

    ...\\ See Securities Exchange Act Release Nos. 68460 (December 18, 2012), 77 FR 76145 (December 26, 2012) (SR-NYSEMKT-2012-41) (approval order) (``NYSE MKT filing''); 68461 (December 18, 2012), 77 FR 76155...), 78 FR 3065 (January 15, 2013) (SR-CBOE-2012-131) (notice of filing and immediate...

  3. 78 FR 48744 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-09

    ... standard (monthly) option. \\4\\ See Securities Exchange Act Release Nos. 68460 (December 18, 2012), 77 FR... 18, 2012), 77 FR 76155 (December 26, 2012) (SR-NYSEArca-2012-94) (approval order) (``NYSE Arca filing''); 68606 (January 9, 2013), 78 FR 3065 (January 15, 2013) (SR-CBOE-2012-131) (notice of filing...

  4. 77 FR 29712 - Program for Allocation of Regulatory Responsibilities Pursuant to Rule 17d-2; Notice of Filing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-18

    ... [Federal Register Volume 77, Number 97 (Friday, May 18, 2012)] [Notices] [Pages 29712-29718] [FR... Securities Exchange Act Release No. 12352 (April 20, 1976), 41 FR 18808 (May 7, 1976). To address regulatory... 28, 1976), 41 FR 49091 (November 8, 1976). II. The Plan On December 11, 2007, the Commission...

  5. 78 FR 53797 - Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Notice of Filing and Immediate Effectiveness...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-30

    ...-69772 (June 17, 2013), 78 FR 37645 (June 21, 2013) (order approving SR-OCC-2013- 004). \\4\\ See Securities Exchange Act Release Nos. 70091 (August 1, 2013), 78 FR 48212 (August 7, 2013) (SR-CBOE-2013-073) and 69996 (July 17, 2013), 78 FR 44183 (July 23, 2013) (SR-MIAX-2013-32). Most option...

  6. 76 FR 14812 - Final Regulation Extending the Reporting Deadline for Year 2010 Data Elements Required Under the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-18

    ... facilities. 311411 Frozen fruit, juice, and vegetable manufacturing facilities. 311421 Fruit and vegetable... Secondary lead smelting and refining facilities. Lime Production 327410 Calcium oxide, calcium hydroxide... Manufacturing S 74 FR 56260, 75 FR 66434. Miscellaneous Uses of Carbonate.. U 74 FR 56260. Nitric...

  7. 77 FR 21963 - Stainless Steel Plate in Coils From Belgium: Notice of Final Results of Antidumping Duty Changed...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-12

    ... Coils From Belgium, Canada, Italy, the Republic of Korea, South Africa, and Taiwan, 64 FR 27756 (May 21... From Belgium, Canada, Italy, the Republic of Korea, South Africa, and Taiwan, 68 FR 11520 (March 11..., Canada, Italy, the Republic of Korea, South Africa, and Taiwan, 68 FR 16117 (April 2, 2003); and...

  8. 77 FR 64300 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Reef Fish Fishery of the Gulf of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-19

    ... are utilized efficiently. Through Amendment 30B to the FMP (74 FR 17603, April 16, 2009), NMFS... again the following year. Regulations implemented through Amendment 32 to the FMP (77 FR 6988, February...) in the rule implementing the Generic ACL Amendment (76 FR 82044, December 29, 2011). Sale...

  9. 78 FR 61827 - Reef Fish Fishery of the Gulf of Mexico; 2013 Recreational Accountability Measure and Closure for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-04

    ... 61827-61828] [FR Doc No: 2013-24361] DEPARTMENT OF COMMERCE National Oceanic and Atmospheric... recreational ACT of 217,100 lb (98,475 kg), round weight (78 FR 27084, May 9, 2013), as specified in 50 CFR 622... Fisheries Service. [FR Doc. 2013-24361 Filed 10-3-13; 8:45 am] BILLING CODE 3510-22-P...

  10. 77 FR 62209 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Reef Fish Fishery of the Gulf of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-12

    ...-62210] [FR Doc No: 2012-25129] DEPARTMENT OF COMMERCE National Oceanic and Atmospheric Administration 50... measures were established for gag and red grouper in 2009 through Amendment 30B to the FMP (74 FR 17603... exceeded again. Regulations implemented through Amendment 32 to the FMP (77 FR 6988, February 10,...

  11. 76 FR 51905 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Gulf of Mexico Reef Fish Fishery...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-19

    ..., 2008, NMFS issued a final rule (73 FR 38139) to implement Amendment 30A to the FMP (Amendment 30A..., NMFS published a rule in the Federal Register (76 FR 23909, April 29, 2011) announcing the 503,000-lb... for the FSEIS was published on April 18, 2008 (73 FR 21124). An electronic copy of the FSEIS and...

  12. 76 FR 77561 - Atomic Safety and Licensing Board; In the Matter of Progress Energy Florida, Inc.; (Levy County...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-13

    ... FR 74,532 (Dec. 8, 2008) (ADAMS Accession No. ML083430114). On February 6, 2009, the Nuclear.... ML090371107). \\2\\ Progress Energy Florida, Inc.; Establishment of Atomic Safety and Licensing Board, 74 FR... Meetings, 67 FR 36,920, 36,923 (May 28, 2002). C. Submitting a Request To Make an Oral Limited...

  13. 77 FR 29701 - Impact of Construction (Under a Combined License) of New Nuclear Power Plant Units on Operating...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-18

    ... [Federal Register Volume 77, Number 97 (Friday, May 18, 2012)] [Notices] [Page 29701] [FR Doc No...,'' ADAMS Accession No. ML093440252 (76 FR 8383). The staff received questions and editorial comments from..., Office of New Reactors. [FR Doc. 2012-12130 Filed 5-17-12; 8:45 am] BILLING CODE 7590-01-P...

  14. 77 FR 76356 - Privacy of Consumer Financial Information Under Title V of the Gramm-Leach-Bliley Act

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-28

    ...] [Pages 76356-76367] [FR Doc No: 2012-31273] COMMODITY FUTURES TRADING COMMISSION 17 CFR Part 160 Privacy... information; and/or (2) Acknowledgment of receipt form. [74 FR 62975, Dec. 1, 2009] Appendix B to Part 160... standards to safeguard your nonpublic personal information. [66 FR 21252, Apr. 27, 2001, as amended at 74...

  15. 75 FR 81970 - Marine Mammals; File No. 14245; Permit To Conduct Research on Marine Mammals; Receipt of Application

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-29

    ...-81971] [FR Doc No: 2010-32847] DEPARTMENT OF COMMERCE National Oceanic and Atmospheric Administration...). On April 27, 2010 notice (80 FR 22119) was published that NMML requests a 5-year permit to conduct... Protected Resources, National Marine Fisheries Service. [FR Doc. 2010-32847 Filed 12-28-10; 8:45 am]...

  16. 76 FR 65683 - Reorganization of Foreign-Trade Zone 205 Under Alternative Site Framework Port Hueneme, CA

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-24

    ... Board adopted the alternative site framework (ASF) (74 FR 1170, 01/12/09; correction 74 FR 3987, 01/22... Federal Register (76 FR 19314-19315, 04/07/2011) and the application has been ] processed pursuant to the... sites that would terminate authority for Sites 1 through 4 if not activated by October 31, 2016....

  17. 75 FR 1589 - Amendment of Limitation of Duty- and Quota-Free Imports of Apparel Articles Assembled in...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-12

    ... Proclamation 7616 of October 31, 2002, 67 FR 67283 (November 5, 2002); Executive Order 13277, 67 FR 70305... Further Assignment of Functions, 67 FR 71606 (November 25, 2002). Section 3103 of the Trade Act of 2002... World Trade Organization Agreement on Textiles and Clothing (ATC), and the conversion factors for...

  18. 77 FR 64798 - Correction to the Amendment of the Limitation of Duty- and Quota-Free Imports of Apparel Articles...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-23

    ... October 31, 2002, 67 FR 67283 (November 5, 2002); Executive Order 13277, 67 FR 70305 (November 19, 2002... of Functions, 67 FR 71606 (November 25, 2002). Section 3103 of the Trade Act of 2002 amended the... Trade Organization Agreement on Textiles and Clothing (ATC), and the conversion factors for ] units...

  19. 76 FR 74113 - Self-Regulatory Organizations; NASDAQ OMX PHLX LLC; Notice of Filing and Immediate Effectiveness...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-30

    ... equities exchanges and FINRA. See Securities Exchange Act Release No. 62252 (June 10, 2010), 75 FR 34186...), 75 FR 34183 (June 16, 2010) (SR-FINRA-2010-025). \\4\\ The Commission approved the addition to the... exchanges and FINRA. See Securities Exchange Act Release No. 62884 (September 10, 2010), 75 FR...

  20. 76 FR 74109 - Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Notice of Filing and Immediate Effectiveness...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-30

    .... See Securities Exchange Act Release No. 62252 (June 10, 2010), 75 FR 34186 (June 16, 2010) (File Nos...-CBOE- 2010-047), and Securities Exchange Act Release No. 62251 (June 10, 2010), 75 FR 34183 (June 16... Securities Exchange Act Release No. 62884 (September 10, 2010), 75 FR 56618 (September 16, 2010) (File...