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  1. Astronomical imaging with InSb arrays

    NASA Astrophysics Data System (ADS)

    Pipher, Judith L.

    Ten years ago, Forrest presented the first astronomical images with a Santa Barbara Research Center (SBRC) 32 x 32 InSb array camera at the first NASA-Ames Infrared Detector Technology Work-shop. Soon after, SBRC began development of 58 x 62 InSb arrays, both for ground-based astronomy and for the Space Infrared Telescope Facility (SIRTF). By the time of the 1987 Hilo workshop 'Ground-based Astronomical Observations with Infrared Array Dectectors' astronomical results from cameras based on SBRC 32 x 32 and 58 x 62 InSb arrays, a CE linear InSb array, and a French 32 x 32 InSb charge injection device (CID) array were presented. And at the Tucson 1990 meeting 'Astrophysics with Infrared Arrays', it was clear that this new technology was no longer the province of 'IR pundits', but provided a tool for all astronomers. At this meeting, the first astronomical observations with SBRC's new, gateless passivation 256 x 256 InSb arrays will be presented: they perform spectacularly] In this review, I can only broadly brush on the interesting science completed with InSb array cameras. Because of the broad wavelength coverage (1-5.5 micrometer) of InSb, and the extremely high performance levels throughout the band, InSb cameras are used not only in the near IR, but also from 3-5.5 micrometer, where unique science is achieved. For example, the point-like central engines of active galactic nuclei (AGN) are delineated at L' and M', and Bra and 3.29 micrometer dust emission images of galactic and extragalactic objects yield excitation conditions. Examples of imaging spectroscopy, high spatial resolution imaging, as well as deep, broad-band imaging with InSb cameras at this meeting illustrate the power of InSb array cameras.

  2. Characterization of midwave infrared InSb avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Abautret, J.; Perez, J. P.; Evirgen, A.; Rothman, J.; Cordat, A.; Christol, P.

    2015-06-01

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(-50 mV) = 32 nA/cm2 at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at -4 V at 77 K. The Okuto-Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  3. InSb DRO array characteristics

    NASA Technical Reports Server (NTRS)

    Forrest, W. J.; Pipher, J. L.; Ninkov, Z.; Garnett, J. D.

    1989-01-01

    Researchers tested 58 x 62 low-doped InSb diode arrays bonded to MOSFET readouts for their performance potential in a low background space environment. Of primary concern were the quantum efficiency, dark current and read noise. The quantum efficiency (45 percent at 3.3 microns) and dark current (less than 2.4e(-)/s) were found to be adequate for the Space Infrared Telescope Facility (SIRTF) experiments, while the read noise (200 e(-) RMS) was found to be wanting. More subtle concerns, such as image quality, linearity/calibratibility and flat fielding were also investigated. In these respects the arrays appear to be well suited for the high sensitivity, photometric accuracy, and image clarity demanded by the SIRTF experiments.

  4. Design, fabrication, and characterization of InSb avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Abautret, J.; Evirgen, A.; Perez, J. P.; Christol, P.; Rouvié, A.; Cluzel, R.; Cordat, A.; Rothman, J.

    2013-12-01

    In this communication, the potentiality of InSb material as an avalanche photodiode (APD) device is investigated. Current density-voltage (J-V) characteristics at 77K of InSb pin photodiodes were simulated by using ATLAS software from SILVACO, in dark conditions and under illumination. In order to validate parameter values used for the modeling, theoretical J-V results were compared with experimental measurements performed on InSb diodes fabricated by molecular beam epitaxy. Next, assuming a multiplication process only induced by the electrons (e-APD), different designs of separate absorption and multiplication (SAM) APD structure were theoretically investigated and the first InSb SAM APD structure with 1μm thick multiplication layer was then fabricated and characterized.

  5. InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  6. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  7. InSb thin films grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Rajaram, P.

    2014-04-01

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl3 and 0.03M SbCl3, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm-1 corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  8. Phase coherent transport in InSb nanowires

    NASA Astrophysics Data System (ADS)

    Yao, Huijun; Yusuf Günel, Hacı; Blömers, Christian; Weis, Karl; Chi, Junhong; Grace Lu, Jia; Liu, Jie; Grützmacher, Detlev; Schäpers, Thomas

    2012-08-01

    Comprehensive electrical transport studies are performed on InSb nanowires by varying temperature, gate voltage, and magnetic field. The 3-dimensional bulk conduction is found to dominate in the nanowire channel after investigating a large number of nanowires with different diameters, which show approximately a linear relation between the conductance normalized to the length and the wire cross section. At low temperatures, universal conductance fluctuations are observed. From the amplitude and the correlation voltage of the conductance fluctuations, the phase-coherence length in InSb nanowires is determined at various temperatures.

  9. Spin-orbit interaction in InSb nanowires

    NASA Astrophysics Data System (ADS)

    van Weperen, I.; Tarasinski, B.; Eeltink, D.; Pribiag, V. S.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Wimmer, M.

    2015-05-01

    We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of 0.5 -1 eVÅ corresponding to a spin-orbit energy of 0.25 -1 meV . These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.

  10. InSb charge coupled infrared imaging device: The 20 element linear imager

    NASA Technical Reports Server (NTRS)

    Thom, R. D.; Koch, T. L.; Parrish, W. J.; Langan, J. D.; Chase, S. C.

    1980-01-01

    The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

  11. InSb photodetectors with PIN and nBn designs

    NASA Astrophysics Data System (ADS)

    Evirgen, A.; Abautret, J.; Perez, J. P.; Aït-Kaci, H.; Christol, P.; Fleury, J.; Sik, H.; Nedelcu, A.; Cluzel, R.; Cordat, A.

    2013-12-01

    InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at -50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.

  12. Thermoelectric study of INSB secondary phase based nano composite materials

    NASA Astrophysics Data System (ADS)

    Zhu, Song

    In the past several decades there has been an intensive study in the field of thermoelectric study that is basically materials driven. As the simplest technology applicable in direct heat-electricity energy conversion, thermoelectricity utilizes the Seebeck effect to generate electricity from heat or conversely achieve the solid-state cooling via the Peltier effect. With many technical merits, thermoelectric devices can be used as spot-size generators or distributed refrigerators, however, their applications are restricted by the energy conversion efficiency, which is mainly determined by the figure of merit ZT of the thermoelectric materials that these devices are made of. A higher ZT (ZT=alpha2*sigma/kappa) entails a larger Seebeck coefficient (alpha), a higher electrical conductivity (sigma) and a lower thermal conductivity (kappa). However, it is challenging to simultaneously optimize these three material parameters because they are adversely correlated. To this end, a promising approach to answer this challenge is nano-compositing or microstructuring at multiple length scales. The numerous grain boundaries in nano-composite allow for significant reduction of lattice thermal conductivity via strong phonon scattering and as well an enhanced Seebeck coefficient via, carrier energy filtering effect. As the same grain boundaries also scatter carriers, a coherent interface between grains is needed to minimize the degradation of carrier mobilities. To this end,in-situ, instead of ex-situ, formation of nano-composite is preferred. It is noteworthy that electrical conductivity can be further enhanced by the injection of high-mobility carriers introduced by the secondary nano-phase. In view of the prevalent use of Antimony (Sb) in thermoelectric materials, Indium Antimonide (InSb) naturally becomes one of the most promising nano-inclusions since it possesses one of the largest carrier mobilities (˜7.8 m 2/V-s) in any semiconductors, while at the same time possesses a

  13. Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoling; Meng, Qingduan; Zhang, Liwen; Lv, Yanqiu

    2014-03-01

    A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young's modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.

  14. Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

    PubMed

    Pan, D; Fan, D X; Kang, N; Zhi, J H; Yu, X Z; Xu, H Q; Zhao, J H

    2016-02-10

    Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana Fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here, we report on a new route toward growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ∼10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes toward the development of InSb-based devices for applications in nanoelectronics, optoelectronics, and quantum electronics and for the study of fundamental physical phenomena. PMID:26788662

  15. Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

    PubMed

    Pan, D; Fan, D X; Kang, N; Zhi, J H; Yu, X Z; Xu, H Q; Zhao, J H

    2016-02-10

    Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana Fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here, we report on a new route toward growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ∼10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes toward the development of InSb-based devices for applications in nanoelectronics, optoelectronics, and quantum electronics and for the study of fundamental physical phenomena.

  16. Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix

    SciTech Connect

    Chen Dongliang; Fan Jiangwei; Wei Shiqiang; Li Chaosheng; Zhu Zhengang

    2005-08-15

    The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

  17. Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy

    SciTech Connect

    Mishima, T. D.

    2011-10-01

    High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

  18. Exciton Dynamics in InSb Colloidal Quantum Dots.

    PubMed

    Sills, Andrew; Harrison, Paul; Califano, Marco

    2016-01-01

    Extraordinarily fast biexciton decay times and unexpectedly large optical gaps are two striking features observed in InSb colloidal quantum dots that have remained so far unexplained. The former, should its origin be identified as an Auger recombination process, would have important implications regarding carrier multiplication efficiency, suggesting these nanostructures as potentially ideal active materials in photovoltaic devices. The latter could offer new insights into the factors that influence the electronic structure and consequently the optical properties of systems with reduced dimensionality and provide additional means to fine-tune them. Using the state-of-the-art atomistic semiempirical pseudopotential method we unveil the surprising origins of these features and show that a comprehensive explanation for these properties requires delving deep into the atomistic detail of these nanostructures and is, therefore, outside the reach of less sophisticated, albeit more popular, theoretical approaches. PMID:26650516

  19. InSb heterodyne receivers for submillimeter astronomy

    NASA Technical Reports Server (NTRS)

    Phillips, T. G.

    1981-01-01

    InSb hot electron bolometer mixer receivers have been developed for submillimeter line studies of the interstellar medium up to about 500 GHz. The receivers have been used aboard the NASA Kuiper Airborne Observatory which is transported to about 12,000 km by a C141 aircraft. Data have been obtained on new interstellar lines (such as the ground-state fine structure transition of atomic carbon at 492 GHz) and such molecular transitions as carbon monoxide and water. Other data were obtained at ground level using the 5-cm Hale telescope at Mount Palomar and the NASA Infrared Telescope facility at Mauna Kea, HI. The heterodyne bolometers have reached noise temperatures of less than 400 K at all frequencies to 500 GHz.

  20. Size- and shape-dependent phase diagram of In-Sb nano-alloys

    NASA Astrophysics Data System (ADS)

    Ghasemi, Masoomeh; Zanolli, Zeila; Stankovski, Martin; Johansson, Jonas

    2015-10-01

    Nano-scale alloy systems with at least one dimension below 100 nm have different phase stabilities than those observed in the macro-scale systems due to a large surface to volume ratio. We have used the semi-empirical thermodynamic modelling, i.e. the CALPHAD method, to predict the phase equilibria of the In-Sb nano-scale systems as a function of size and shape. To calculate the size- and shape-dependent phase diagram of the In-Sb system, we have added size-dependent surface energy terms to the Gibbs energy expressions in the In-Sb thermodynamic database. We estimated the surface energies of the solution phases and of the InSb intermetallic phase using the Butler equation and DFT calculations, respectively. A melting point and eutectic point depression were observed for both nanoparticle and nanowire systems. The eutectic composition on the In-rich and Sb-rich sides of the phase diagram shifted towards higher solubility. We believe that the phase diagram of In-Sb nano-alloys is useful for an increased understanding of the growth parameters and mechanisms of InSb nanostructures.

  1. Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

    NASA Astrophysics Data System (ADS)

    Sun, Weiguo; Fan, Huitao; Peng, Zhenyu; Zhang, Liang; Zhang, Xiaolei; Zhang, Lei; Lu, Zhengxiong; Si, Junjie; Emelyanov, E.; Putyato, M.; Semyagin, B.; Pchelyakov, O.; Preobrazhenskii, V.

    2014-01-01

    Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R0A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 104 Ω/cm2, and the average value of R0A was 1.66 × 104 Ω/cm2. The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.

  2. Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Bedair, S. M.

    1984-01-01

    Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

  3. Resonant Terahertz InSb Waveguide Device for Sensing Polymers

    NASA Astrophysics Data System (ADS)

    Bhatt, Shourie Ranjana J.; Bhatt, Piyush; Deshmukh, Prathmesh; Sangala, Bagvanth R.; Satyanarayan, M. N.; Umesh, G.; Prabhu, S. S.

    2016-08-01

    We have demonstrated the possibility of employing a device, designed to operate at terahertz (THz) frequencies, for sensing materials. The device consists of a waveguide section with a pair of stubs located at the middle and oriented transversely to the waveguide axis. The two stubs function as a resonator and, hence, the device would behave as a filter in the THz domain. The device was fabricated by laser micromachining of InSb pellets and was characterized by THz time-domain transmission spectroscopy. For a waveguide width of 740 μm and stub length of 990 μm, a transmission minimum is seen to occur at 0.265 THz. We investigated the capability of the device to sense polystyrene, dissolved in toluene, loaded into the stubs. The consequent change in the refractive index in the stubs alters the transmitted signal intensity. Our results show that, a change in concentration of polystyrene even by 1 mol/L, leads to measurable change in the transmission coefficient close to the resonant frequency of the device. Thus, our device operating at THz frequencies shows promising potential as chemical and bio sensors.

  4. Local field emission spectroscopy of InSb micrograins

    NASA Astrophysics Data System (ADS)

    Zhukov, N. D.; Glukhovskoy, E. G.; Mosiyash, D. S.

    2015-11-01

    Local electron density-of-state spectra and level parameters in indium antimonide (InSb) micrograins have been studied using a tunneling microscope in the field-electron emission regime. The activation energies (ψ) of electron levels and electron lifetimes (τ) on these levels have been determined based on the correspondence of current-voltage characteristics to the probabilities of emission. Several local electron levels in a near-surface region of intrinsic ( i-InSb) micrograins are identified with ψ ˜ 0.73, 1.33, 1.85, 2.15, and 5.1 eV and τ ˜ 5 × 10-8-3 × 10-7 s, respectively. A physical model is proposed, according to which "light" electrons are localized due to the Coulomb interaction and their dimensional quantization takes place in the near-surface zone as determined by the effective mass, energy, and concentration of electrons and the radius of curvature of the micrograin surface.

  5. Surface cyclotron resonance on InSb in Voigt configuration

    NASA Astrophysics Data System (ADS)

    Merkt, U.

    1985-11-01

    Magnetic fields parallel to space-charge layers on semiconductors define a crossed-field configuration with strong electric fields. Analytical expressions for the resulting hybrid electric-magnetic surface band structure and its optical transitions are derived in the triangular-well approximation of the electrostatic potential. The results of the one-band effective-mass approximation are extended to a two-level model that accounts for the nonparabolicity of narrow-band-gap semiconductors such as InSb. In the hybrid surface band structure, electrons with bulklike wave functions exist, allowing the experimental study of conduction-band cyclotron resonance in crossed fields. This is done in a wide range of frequencies, magnetic fields, and inversion electron densities, i.e., electric field strengths. The experimental results are discussed within the proposed models and are compared with experiments on other semiconductors. Specifically, the destruction of the Landau quantization in crossed electric and magnetic fields is investigated, both theoretically and experimentally; polarons are also studied. This is possible because of the absence of coupled plasma cyclotron-LO-phonon modes in the present degenerate electron system.

  6. MWIR InSb detector with nBn architecture for high operating temperature

    NASA Astrophysics Data System (ADS)

    Perez, J.-P.; Evirgen, A.; Abautret, J.; Christol, P.; Cordat, A.; Nedelcu, A.

    2015-01-01

    In this communication, we report results obtained on a new InSb/InAlSb/InSb `bariode', grown by MBE on (100)- oriented InSb substrate. Because of a very weak valence band offset with InSb (~ 25meV), InAlSb is a good candidate as a barrier layer for electrons. However, due to lattice mismatch with the InSb substrate, careful growth study of InAlSb was made to insure high crystal quality. As a result, InSb-based nBn detector device exhibits dark current density equals to 1x10-9A.cm-2 at 77K: two decades lower than Insb standard pin photodiode with similar cut-off wavelength. Moreover, compared to standard pn (or pin) InSb-based photodetectors fabricated by implanted planar process or by molecular beam epitaxy (MBE), we demonstrate that the reachable working temperature, around 120 K, of the InSbbased nBn detector is respectively higher than 40 K and 20 K than the previous. Such result demonstrates the potentiality of Insb detectors with nBn architecture to reach the high operating temperature.

  7. Pelican: SCD's 640 × 512/15 μm pitch InSb detector

    NASA Astrophysics Data System (ADS)

    Oiknine Schlesinger, J.; Calahorra, Z.; Uri, E.; Shick, O.; Fishman, T.; Shtrichman, I.; Sinbar, E.; Nahum, V.; Kahanov, E.; Shlomovich, B.; Hasson, S.; Fishler, N.; Chen, D.; Markovitz, T.

    2007-04-01

    Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), that are currently used in different applications worldwide. SCD's production line includes InSb FPAs with mid format (320x256 elements), and large format (640x512 elements), all available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA). Many of SCD's products are fully customized for customers' needs, and are optimized for each application with respect to the weight, power, size, and performance. In 2006, SCD has added to its broad InSb product portfolio the new "Pelican" detector family. All Pelican detectors include a large format 640×512 InSb FPA with 15μm pitch, which is based on the FLIR/Indigo ISC0403 Readout Integrated Circuit (ROIC). Due to its small size, the Pelican FPA fits in any mid format Dewar, enabling upgrading of mid format systems with higher spatial resolution due to its good MTF. This work presents the high performance of Pelican products. As achieved in all SCD's InSb DDC's, the Pelican detectors demonstrate high uniformity and correctability (residual non uniformity less than 0.05% std/DR) and remarkable operability (typically better than 99.9%). The Pelican FPA can be integrated in various DDCA configurations as per application needs, such as light weight, low power and compact form for hand held imagers, or a rigid configuration for environmentally demanding operating and storage conditions.

  8. Optical design of a mid-wavelength infrared InSb nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Azizur-Rahman, K. M.; LaPierre, R. R.

    2016-08-01

    A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3–5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.

  9. Optical design of a mid-wavelength infrared InSb nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Azizur-Rahman, K. M.; LaPierre, R. R.

    2016-08-01

    A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3-5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.

  10. Optical design of a mid-wavelength infrared InSb nanowire photodetector.

    PubMed

    Azizur-Rahman, K M; LaPierre, R R

    2016-08-01

    A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3-5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.

  11. InSb nanowire double quantum dots coupled to a superconducting microwave cavity

    NASA Astrophysics Data System (ADS)

    Wang, R.; Deacon, R. S.; Car, D.; Bakkers, E. P. A. M.; Ishibashi, K.

    2016-05-01

    By employing a micrometer precision mechanical transfer technique, we embed individual InSb nanowires into a superconducting coplanar waveguide resonator. We investigate the characteristics of a double quantum dot formed in an InSb nanowire interacting with a single mode microwave field. The charge stability diagram can be obtained from the amplitude and phase response of the resonator independently from the dc transport measurement. As the charge transits between dot-dot, or dot-lead, the change of resonator transmission is compared and the charge-cavity coupling strength is extracted to be in the magnitude of several MHz.

  12. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  13. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors.

    PubMed

    Theocharous, Evangelos

    2005-10-10

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 degrees C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar. PMID:16237922

  14. Self-assembly of a 1-eicosanethiolate layer on InSb(100)

    NASA Astrophysics Data System (ADS)

    Contreras, Yissel; Muscat, Anthony J.

    2016-05-01

    1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm-1 in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

  15. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  16. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGESBeta

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  17. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

    SciTech Connect

    Theocharous, Evangelos

    2005-10-10

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar.

  18. Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

    PubMed Central

    2013-01-01

    Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

  19. Enhanced Raman Scattering from InSb Nanodots; Temperature and Laser-Power Dependent Studies

    NASA Astrophysics Data System (ADS)

    Wada, Noboru; Takayama, Haruki; Morohashi, Satoshi

    2010-03-01

    InSb nanodots were uniquely fabricated by vapor-transport on a Si substrate which had previously been bombarded by FBI Ga ions. The InSb nanodots were then examined by spatially-resolved Raman scattering using an Ar-ion laser (λ= 514.5 and 488 nm with P=1˜15 mW) with an optical microscope and CCD detector. In addition to the TO and LO peaks of InSb observed at ˜180 and 191 cm-1 respectively, two peaks were observed at ˜110 and 150 cm-1. Those Raman peaks were tentatively attributed to the 2TA and TO-TA second-order Raman processes. Those two peak intensities appeared to grow at the expense of the TO and LO Raman peak intensities with increasing the sample temperature from 10 K to 450 K. Also, the two-phonon peak intensities increased non-linearly with the probing laser power used. Hot carriers and their interactions with phonons in the restricted regions will be discussed together with Raman scattering results obtained from single-crystal InSb.

  20. Ab initio calculations of the optical properties of crystalline and liquid InSb

    SciTech Connect

    Sano, Haruyuki; Mizutani, Goro

    2015-11-15

    Ab initio calculations of the electronic and optical properties of InSb were performed for both the crystalline and liquid states. Two sets of atomic structure models for liquid InSb at 900 K were obtained by ab initio molecular dynamics simulations. To reduce the effect of structural peculiarities in the liquid models, an averaging of the two sets of the calculated electronic and optical properties corresponding to the two liquid models was performed. The calculated results indicate that, owing to the phase transition from crystal to liquid, the density of states around the Fermi level increases. As a result, the energy band gap opening near the Fermi level disappears. Consequently, the optical properties change from semiconductor to metallic behavior. Namely, owing to the melting of InSb, the interband transition peaks disappear and a Drude-like dispersion is observed in the optical dielectric functions. The optical absorption at a photon energy of 3.06 eV, which is used in Blu-ray Disc systems, increases owing to the melting of InSb. This increase in optical absorption is proposed to result from the increased optical transitions below 2 eV.

  1. Modeling and stress analysis of large format InSb focal plane arrays detector under thermal shock

    NASA Astrophysics Data System (ADS)

    Zhang, Li-Wen; Meng, Qing-Duan; Zhang, Xiao-Ling; Yu, Qian; Lv, Yan-Qiu; Si, Jun-Jie

    2013-09-01

    Higher fracture probability, appearing in large format InSb infrared focal plane arrays detector under thermal shock loadings, limits its applicability and suitability for large format equipment, and has been an urgent problem to be solved. In order to understand the fracture mechanism and improve the reliability, three dimensional modeling and stress analysis of large format InSb detector is necessary. However, there are few reports on three dimensional modeling and simulation of large format InSb detector, due to huge meshing numbers and time-consuming operation to solve. To solve the problems, basing on the thermal mismatch displacement formula, an equivalent modeling method is proposed in this paper. With the proposed equivalent modeling method, employing the ANSYS software, three dimensional large format InSb detector is modeled, and the maximum Von Mises stress appearing in InSb chip dependent on array format is researched. According to the maximum Von Mises stress location shift and stress increasing tendency, the adaptability range of the proposed equivalent method is also derived, that is, for 16 × 16, 32 × 32 and 64 × 64 format, its adaptability ranges are not larger than 64 × 64, 256 × 256 and 1024 × 1024 format, respectively. Taking 1024 × 1024 InSb detector as an example, the Von Mises stress distribution appearing in InSb chip, Si readout integrated circuits and indium bump arrays are described, and the causes are discussed in detail. All these will provide a feasible research plan to identify the fracture origins of InSb chip and reduce fracture probability for large format InSb detector.

  2. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.

    PubMed

    de la Mata, María; Leturcq, Renaud; Plissard, Sébastien R; Rolland, Chloé; Magén, César; Arbiol, Jordi; Caroff, Philippe

    2016-02-10

    Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

  3. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide

    SciTech Connect

    Lvova, T. V. Dunaevskii, M. S.; Lebedev, M. V.; Shakhmin, A. L.; Sedova, I. V.; Ivanov, S. V.

    2013-05-15

    The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na{sub 2}S and subsequent annealing in vacuum at 150 Degree-Sign C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.

  4. Structural stability and electronic properties of InSb nanowires: A first-principles study

    SciTech Connect

    Zhang, Yong; Tang, Li-Ming Ning, Feng; Chen, Ke-Qiu; Wang, Dan

    2015-03-28

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  5. Energy level spectroscopy of InSb quantum wells using quantum-well LED emission

    NASA Astrophysics Data System (ADS)

    Tenev, T. G.; Palyi, A.; Mirza, B. I.; Nash, G. R.; Fearn, M.; Smith, S. J.; Buckle, L.; Emeny, M. T.; Ashley, T.; Jefferson, J. H.; Lambert, C. J.

    2009-02-01

    We have investigated the low-temperature optical properties of InSb quantum-well (QW) light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al0.143In0.857Sb , QW2 had a 40 nm undoped InSb well with a barrier composition of Al0.077In0.923Sb , and QW3 had a 100 nm undoped InSb well with a barrier composition of Al0.025In0.975Sb . For QW1, the signature of two transitions (CB1-HH1 and CB1-HH2) can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k.p calculation of the band structure together with a first-order time-dependent perturbation method (Fermi golden rule) calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of “forbidden transitions,” and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

  6. Schottky barrier and contact resistance of InSb nanowire field-effect transistors.

    PubMed

    Fan, Dingxun; Kang, N; Ghalamestani, Sepideh Gorji; Dick, Kimberly A; Xu, H Q

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height [Formula: see text] is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance ([Formula: see text]) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that [Formula: see text] in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field [Formula: see text]. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

  7. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  8. Simultaneous sensing of film thickness and temperature using an InSb Hall element

    NASA Astrophysics Data System (ADS)

    Yuji, Jun-ichiro; Ueda, Tohru

    2016-04-01

    This paper describes a unique sensing method to apply an InSb Hall element that enables simultaneous sensing device to detect thickness of insulating film on an iron plate and temperature. We made a trial thickness-temperature sensor consists of an InSb Hall element and a small permanent magnet. Here, the film thickness is detected by the variation in distance between the Hall element with the magnet and the iron plate. The temperature characteristic of an InSb Hall element depends on the drive circuit to generate the Hall voltage. Therefore, the Hall element is driven using a constant voltage source and a constant current source by time-division to obtain two kinds of Hall output voltages. Two output Hall voltages driven by two kinds of bias circuits are measured in the film thickness range from 0 to 500 μm, and for a temperature range of -10 to 70 °C. The inverse response surfaces that are used to identify the thickness of insulating film and temperature are formulated using experimental results. The results obtained show that it is possible to detect film thickness and temperature by obtaining two kinds of Hall voltages.

  9. Schottky barrier and contact resistance of InSb nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Kang, N.; Gorji Ghalamestani, Sepideh; Dick, Kimberly A.; Xu, H. Q.

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height {{{Φ }}}{{SB}}∼ 20 {{meV}} is present at the metal–InSb NW interfaces and its effective height is gate-tunable. The contact resistance ({R}{{c}}) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that {R}{{c}} in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field {B}{{c}}. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au–InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

  10. Study of advanced InSb arrays for SIRTF (Space Infrared Telescope Facility)

    NASA Technical Reports Server (NTRS)

    Hoffman, Alan; Feitt, Robert

    1989-01-01

    The Santa Barbara Research Center has completed a study leading to the development of advanced Indium Antimonide detector arrays for the Space Infrared Telescope Facility (SIRTF) Focal Plane Array Detector (FPAD) Subsystem of the Infrared Array Camera (IRAC) Band 1. The overall goal of the study was to perform design tradeoff studies, analysis and research to develop a Direct Readout Integrated Circuit to be hybridized to an advanced, high performance InSb detector array that would satisfy the technical requirements for Band 1 as specified in the IRAC Instrument Requirements Document (IRD), IRAC-202. The overall goal of the study was divided into both a near-term goal and a far-term goal. The near-term goal identifies current technology available that approaches, and in some cases meets the program technological goals as specified in IRAC-202. The far-term goal identifies technology development required to completely achieve SIRTF program goals. Analyses of potential detector materials indicates that InSb presently meets all Band 1 requirements and is considered to be the baseline approach due to technical maturity. The major issue with regard to photovoltaic detectors such as InSb and HgCdTe is to achieve a reduction in detector capacitance.

  11. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    PubMed Central

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  12. Schottky barrier and contact resistance of InSb nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Kang, N.; Gorji Ghalamestani, Sepideh; Dick, Kimberly A.; Xu, H. Q.

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height {{{Φ }}}{{SB}}˜ 20 {{meV}} is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance ({R}{{c}}) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that {R}{{c}} in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field {B}{{c}}. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

  13. Schottky barrier and contact resistance of InSb nanowire field-effect transistors.

    PubMed

    Fan, Dingxun; Kang, N; Ghalamestani, Sepideh Gorji; Dick, Kimberly A; Xu, H Q

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height [Formula: see text] is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance ([Formula: see text]) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that [Formula: see text] in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field [Formula: see text]. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices. PMID:27232588

  14. Electronic structure and magnetism of doped wurtzite InSb nanowire

    NASA Astrophysics Data System (ADS)

    Wang, Dan; Tang, Li-Ming

    2016-05-01

    Using first-principles calculations, the effect on the magnetism of passivation, acceptors occupying on different sites, 3d 2-3d 10 impurities doping and interactions in [0 0 0 1] wurtzite InSb nanowire have been investigated. The results show that (i) the InSb nanowire is self-passivated and the dangling bonds of which do not induce any gap-states and spin-polarization. Thus pseudo-hydrogen saturation has little effect on removing gap-states, causing spin-polarization, and stabilizing the spin ground state. (ii) The magnetic moments induced by early 3d (Ti, V, Cr and Mn) impurities correspond to the numbers of free 3d electrons, while the late 3d (Ni, Cu and Zn) impurities cannot give rise to any spin-polarization. (iii) Although both are acceptor doped, InSb:Mn and InSb:Ge reveal pronounced differences on spin-polarization. The former has almost the largest magnetic moment and spin-splitting among the 3d impurities doped InSb nanowires, whereas the latter has no spin-polarization. These phenomenon are explained well by employing the level repulsion descriptions.

  15. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    NASA Astrophysics Data System (ADS)

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-04-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics.

  16. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  17. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  18. Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station

    NASA Astrophysics Data System (ADS)

    Ostrogorsky, A. G.; Marin, C.; Churilov, A.; Volz, M. P.; Bonner, W. A.; Duffar, T.

    2008-01-01

    Four Te-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS). Three Te-doped InSb crystals were grown at R=5 mm/h. One crystal was grown at R=3.33 mm/h. The distribution of Te was measured using secondary ion mass spectroscopy (SIMS). The initial transients in Te concentration were found to be consistent, yielding a diffusivity of Te in InSb melts of D=1×10 -5 cm 2/s. One experiment revealed a diffusion controlled final transient. In all experiments, the charge was pressurized by a piston and spring device, to prevent de-wetting.

  19. Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

    SciTech Connect

    D'Costa, Vijay Richard Yeo, Yee-Chia; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt

    2015-06-14

    Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06–4.6 eV shows the critical point transitions E{sub 0}, E{sub 1}, E{sub 1} + Δ{sub 1}, E{sub 0}{sup ′}, and E{sub 2}. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics.

  20. Initial Transient in Zn-doped InSb Grown in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A G.; Marin, C.; Volz, M.; Duffar, T.

    2009-01-01

    Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

  1. Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).

    PubMed

    Barfuss, A; Dudy, L; Scholz, M R; Roth, H; Höpfner, P; Blumenstein, C; Landolt, G; Dil, J H; Plumb, N C; Radovic, M; Bostwick, A; Rotenberg, E; Fleszar, A; Bihlmayer, G; Wortmann, D; Li, G; Hanke, W; Claessen, R; Schäfer, J

    2013-10-11

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. PMID:24160626

  2. Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

    NASA Astrophysics Data System (ADS)

    Barfuss, A.; Dudy, L.; Scholz, M. R.; Roth, H.; Höpfner, P.; Blumenstein, C.; Landolt, G.; Dil, J. H.; Plumb, N. C.; Radovic, M.; Bostwick, A.; Rotenberg, E.; Fleszar, A.; Bihlmayer, G.; Wortmann, D.; Li, G.; Hanke, W.; Claessen, R.; Schäfer, J.

    2013-10-01

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

  3. Anharmonic noninertial lattice dynamics during ultrafast nonthermal melting of InSb.

    PubMed

    Zijlstra, Eeuwe S; Walkenhorst, Jessica; Garcia, Martin E

    2008-09-26

    We compute the potential energy surface of femtosecond-laser-excited InSb along the directions in which the crystal becomes soft. Using dynamical simulations the time dependence of the atomic coordinates is obtained. We find that at high excitation densities the anharmonicity of the potential energy surface becomes significant after approximately 100 fs. On the basis of our results we explain recent time-resolved x-ray diffraction experiments. We point out that an alternative model for ultrafast melting [A. M. Lindenberg, Science 308, 392 (2005)] is inconsistent with our calculations.

  4. Anharmonic Noninertial Lattice Dynamics during Ultrafast Nonthermal Melting of InSb

    NASA Astrophysics Data System (ADS)

    Zijlstra, Eeuwe S.; Walkenhorst, Jessica; Garcia, Martin E.

    2008-09-01

    We compute the potential energy surface of femtosecond-laser-excited InSb along the directions in which the crystal becomes soft. Using dynamical simulations the time dependence of the atomic coordinates is obtained. We find that at high excitation densities the anharmonicity of the potential energy surface becomes significant after ˜100fs. On the basis of our results we explain recent time-resolved x-ray diffraction experiments. We point out that an alternative model for ultrafast melting [A. M. Lindenberg , Science 308, 392 (2005)SCIEAS0036-807510.1126/science.1107996] is inconsistent with our calculations.

  5. Quantized Conductance in InSb nanowires at zero magnetic field

    NASA Astrophysics Data System (ADS)

    Kammhuber, Jakob; Cassidy, Maja; Zhang, Hao; Gül, Önder; Pei, Fei; de Moor, Michiel; Watanabe, Kenji; Taniguchi, Takashi; Car, Diana; Bakkers, Erik; Kouwenhoven, Leo

    We present measurements of InSb nanowires in the ballistic transport regime. In 1D materials such as nanowires, electron scattering has an increased chance of back-reflection, obscuring the observation of quantized conductance at low magnetic fields. By improving the contacts to the nanowire as well as its dielectric environment backscattering events are minimized and conductance quantization is observable at zero magnetic field with high device yield. We study the evolution of individual sub-bands in an external magnetic field, observing a degeneracy between the 2nd and 3rd sub-band when the magnetic field is orientated perpendicular to the nanowire axis.

  6. InSb arrays: Astronomy with a 32x32 CCD/development of a 58x62 DRO

    NASA Technical Reports Server (NTRS)

    Forrest, W. J.; Pipher, J. L.

    1986-01-01

    Experience gained in operating infrared detector arrays for high sensitivity astronomical applications at the University of Rochester are summarized. Progress made in operating the 32 x 32 InSb array with bump-bonded Silicon CCD readout is described. Astronomical work done with the 32 x 32 camera is also described. Plans for the future, including improvements for the 32 x 32 camera system as well as implementing a new generation of 58 x 62 InSb array using switched-MOSFET direct readout multiplexing system in the place of the older CCD technology is discussed.

  7. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

    PubMed Central

    2013-01-01

    Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain. PMID:23866944

  8. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B.; Akatay, Cem; Khan, Mohammad Ryyan; Alam, Muhammad A.; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.

    2014-08-28

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  9. High-sensitive thermal video camera with self-scanned 128 InSb linear array

    NASA Astrophysics Data System (ADS)

    Fujisada, Hiroyuki

    1991-12-01

    A compact thermal video camera with very high sensitivity has been developed by using a self-scanned 128 InSb linear array photodiode. Two-dimensional images are formed by a self- scanning function of the linear array focal plane assembly in the horizontal direction and by a vibration mirror in the vertical direction. Images with 128 X 128 pixel number are obtained every 1/30 seconds. A small size InSb detector array with a total length of 7.68 mm is utilized in order to build the compact system. In addition, special consideration is given to a configuration of optics, vibration mirror, and focal plane assembly. Real-time signal processing by a microprocessor is carried out to compensate inhomogeneous sensitivities and irradiances for each detector. The standard NTSC TV format is employed for output video signals. The thermal video camera developed had a very high radiometric sensitivity. Minimum resolvable temperature difference (MRTD) is estimated at about 0.02 K for 300 K target. The stable operation is possible without blackbody reference, because of very small stray radiation.

  10. Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

    PubMed Central

    Obukhov, S. A.; Tozer, S. W.; Coniglio, W. A.

    2015-01-01

    We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm−3 in the temperature range T = 300 K–40 mK, magnetic field B = 0–25T and hydrostatic pressure P = 0–17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes. PMID:26307952

  11. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  12. Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

    NASA Astrophysics Data System (ADS)

    Obukhov, S. A.; Tozer, S. W.; Coniglio, W. A.

    2015-08-01

    We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm-3 in the temperature range T = 300 K-40 mK, magnetic field B = 0-25T and hydrostatic pressure P = 0-17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes.

  13. Molar and excess volumes of liquid In-Sb, Mg-Sb, and Pb-Sb alloys

    SciTech Connect

    Hansen, A.R.; Kaminski, M.A. ); Eckert, C.A. )

    1990-04-01

    By a direct Archimedes' technique, volumetric data were obtained for liquid In, Mg, Pb, and Sb and mixtures of In-Sb, Mg-Sb, and Pb-Sb. In this paper the excess volumes for the alloys studied are presented and discussed.

  14. ns or fs pulsed laser ablation of a bulk InSb target in liquids for nanoparticles synthesis.

    PubMed

    Semaltianos, N G; Hendry, E; Chang, H; Wears, M L; Monteil, G; Assoul, M; Malkhasyan, V; Blondeau-Patissier, V; Gauthier-Manuel, B; Moutarlier, V

    2016-05-01

    Laser ablation of bulk target materials in liquids has been established as an alternative method for the synthesis of nanoparticles colloidal solutions mainly due to the fact that the synthesized nanoparticles have bare, ligand-free surfaces since no chemical precursors are used for their synthesis. InSb is a narrow band gap semiconductor which has the highest carrier mobility of any known semiconductor and nanoparticles of this material are useful in optoelectronic device fabrication. In this paper a bulk InSb target was ablated in deionized (DI) water or ethanol using a nanosecond (20 ns) or a femtosecond (90 fs) pulsed laser source, for nanoparticles synthesis. In all four cases the largest percentage of the nanoparticles are of InSb in the zincblende crystal structure with fcc lattice. Oxides of either In or Sb are also formed in the nanoparticles ensembles in the case of ns or fs ablation, respectively. Formation of an oxide of either element from the two elements of the binary bulk alloy is explained based on the difference in the ablation mechanism of the material in the case of ns or fs pulsed laser irradiation in which the slow or fast deposition of energy into the material results to mainly melting or vaporization, respectively under the present conditions of ablation, in combination with the lower melting point but higher vaporization enthalpy of In as compared to Sb. InSb in the metastable phase with orthorhombic lattice is also formed in the nanoparticles ensembles in the case of fs ablation in DI water (as well as oxide of InSb) which indicates that the synthesized nanoparticles exhibit polymorphism controlled by the type of the laser source used for their synthesis. The nanoparticles exhibit absorption which is observed to be extended in the infrared region of the spectrum.

  15. Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

  16. Multi-element double ring infrared detector based on InSb

    NASA Astrophysics Data System (ADS)

    Li, Mo; Lv, Hui; Guo, Li; Liu, Zhu

    2015-10-01

    A multi-element double ring infrared detector based on InSb p-n photodiodes is presented. The presented detector includes an outer ring detector and an inner ring detector. Each ring consist 10 detector elements, five mid-wave infrared detector elements and five short wave infrared detector elements. Two wavebands of 3.5-5 μm and 1.5-3 μm in mid-wave infrared and short wave infrared are adopted. The mid-wave infrared and short wave infrared detector elements are arranged alternately and close to each other to form detection pair. Between the adjacent detector elements, there is an interval to avoid cross talk. Dual band filter thin films are directly coated on the photodiode surface to form a dual band infrared detector. The double ring detector which can perform dual band IR counter-countermeasures can track target effectively under infrared countermeasure conditions.

  17. Submillimeter wave absorption of n-type InSb at low temperatures

    NASA Technical Reports Server (NTRS)

    Brown, E. R.

    1985-01-01

    The absorption coefficient of two high-purity n-InSb samples is measured in the 10-40 per cm range using Fourier transform spectroscopy. The absorption coefficient spectrum is presented for both samples at 4.2 K. It is also shown for the lower resistance sample cooled to 2.2 K and heated by dc bias to elevated electron gas temperatures of 7.5 and 17.9 K. ac Drude theory gives rather poor agreement with experiment at 2.2 and 4.2 K but does much better when the sample electron gas is heated. In contrast, a simple quantum mechanical theory of absorption based on inverse Bremsstrahlung yields promising agreement at the lower temperatures although its applicability is questionable. The non-Drudian absorption is shown to have a favorable effect on the performance of InSb hot-electron bolometers.

  18. Low-background performance of a monolithic InSb CCD array

    NASA Technical Reports Server (NTRS)

    Bregman, J. D.; Goebel, J. H.; Mccreight, C. R.; Matsumoto, T.

    1982-01-01

    A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.

  19. Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

    NASA Technical Reports Server (NTRS)

    Koch, T. L.; Thom, R. D.; Parrish, W. D.

    1981-01-01

    The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

  20. Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

    NASA Technical Reports Server (NTRS)

    Nakatani, I.

    1993-01-01

    Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

  1. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  2. 128 x 128 MWIR InSb focal plane and camera system

    NASA Astrophysics Data System (ADS)

    Parrish, William J.; Blackwell, John D.; Paulson, Robert C.; Arnold, Harold

    1991-09-01

    The need for increased resolution and sensitivity in IR systems applications has provided the impetus for the development of high-performance second-generation staring focal plane array technology. Previously, the availability of these focal plane array components has been limited and the costs associated with delivery of useful hardware have been high. Utilizing proven InSb detector technology and foundry silicon CMOS processes, a high performance, affordable hybrid focal plane array and support electronics system has been developed. The 128 X 128 array of photovoltac InSb detectors on 50 micrometers centers is interfaced with the silicon readout by aligning and cold welding indium bumps on each detector with the corresponding indium bump on the silicon readout. The detector is then thinned so that it can be illuminated through the backside. The 128 X 128 channel signal processing integrated circuit performs the function of interfacing with the detectors, integrating the detector current, and multiplexing the signals. It is fabricated using a standard double poly, single metal, p-well CMOS process. The detector elements achieve a high quantum efficiency response from less than 1 micrometers to greater than 5 micrometers with an optical fill factor of 90%. The hybrid focal plane array can operate to a maximum frame rate of 1,000 Hz. D* values at 1.7 X 1014 photons/cm2/sec illumination conditions approach the BLIP value of 9.4 X 1011 cm(root)Hz/W with a capacity of 4 X 107 carriers and a dynamic range of greater than 60,000. A NE(Delta) T value of .018 C and a MRT value of .020 C have been measured. The devices operate with only 3 biases and 3 clocks.

  3. 3 mega-pixel InSb detector with 10μm pitch

    NASA Astrophysics Data System (ADS)

    Gershon, G.; Albo, A.; Eylon, M.; Cohen, O.; Calahorra, Z.; Brumer, M.; Nitzani, M.; Avnon, E.; Aghion, Y.; Kogan, I.; Ilan, E.; Shkedy, L.

    2013-06-01

    SCD has developed a new 1920x1536 / 10 μm digital Infrared detector for the MWIR window named Blackbird. The Blackbird detector features a Focal Plane Array (FPA) that incorporates two technological building blocks developed over the past few years. The first one is a 10 μm InSb pixel based on the matured planar technology. The second building block is an innovative 10 μm ReadOut Integrated Circuit (ROIC) pixel. The InSb and the ROIC arrays are connected using Flip-Chip technology by means of indium bumps. The digital ROIC consists a matrix of 1920x1536 pixels and has an analog to digital (A/D) converter per-channel (total of 1920x2 A/Ds). It allows for full frame readout at a high frame rate of up to 120 Hz. Such an on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The ROIC power consumption at maximum bandwidth is less than 400 mW. It features a wide range of pixel-level functionality such as several conversion gain options and a 2x2 pixel binning. The ROIC design makes use of the advanced and matured CMOS technology, 0.18 μm, which allows for high functionality and relatively low power consumption. The FPA is mounted on a Cold-Finger by a specially designed ceramic substrate. The whole assembly is housed in a stiffened Dewar that withstands harsh environmental conditions while minimizing the environment heat load contribution to the heat load of the detector. The design enables a 3-megapixel detector with overall low size, weight, and power (SWaP) with respect to comparable large format detectors. In this work we present in detail the characteristic performance of the new Blackbird detector.

  4. Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface

    SciTech Connect

    Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba; Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu; Kasukabe, Yoshitaka

    2004-12-15

    We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

  5. Extending resolution of scanning optical microscopy beyond the Abbe limit through the assistance of InSb thin layers.

    PubMed

    Ding, Chenliang; Wei, Jingsong; Li, Qisong; Liang, Xin; Wei, Tao

    2016-04-01

    The resolution of light imaging is required to extend beyond the Abbe limit to the subdiffraction, or even nanoscale. In this Letter, we propose to extend the resolution of scanning optical microscopy (SOM) beyond the Abbe limit as a kind of subdiffraction imaging technology through the assistance of InSb thin layers due to obvious nonlinear saturation absorption and reversible formation of an optical pinhole channel. The results show that the imaging resolution is greatly improved compared with the SOM itself. This work provides a way to improve the resolution of SOM without changing the SOM itself, but through the assistance of InSb thin layers. This is also a simple and practical way to extend the resolution of SOM beyond the Abbe limit.

  6. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    SciTech Connect

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-11-30

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10{sup 20 }cm{sup −3} obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.

  7. Observation of Structural Anisotropy and the Onset of Liquidlike Motion During the Nonthermal Melting of InSb

    SciTech Connect

    Gaffney, K.J.; Lindenberg, A.M.; Arthur, J.; Brennan, S.; Luening, K.; Hastings, J.B.; Sokolowski-Tinten, K.; Blome, C.; Duesterer, S.; Ischebeck, R.; Schlarb, H.; Schulte-Schrepping, H.; Schneider, J.; Sheppard, J.; Wark, J.S.; Caleman, C.; Bergh, M.

    2005-09-16

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquidlike dynamics. They also demonstrate that the root-mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  8. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing.

    PubMed

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-22

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air tri-layer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte.

  9. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing

    NASA Astrophysics Data System (ADS)

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-01

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air trilayer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte.

  10. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    SciTech Connect

    Oh, J.E.; Bhattacharya, P.K.; Chen, Y.C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  11. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing.

    PubMed

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-22

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air tri-layer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte. PMID:27557222

  12. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm{sup −1} per QD layer, and the waveguide loss was ∼15 cm{sup −1} at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0} = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120 K in pulsed mode, which is the highest reported to date.

  13. Ageing effects in cryogenically cooled InSb infrared filtered detectors

    NASA Astrophysics Data System (ADS)

    Theocharous, E.; Fox, N. P.

    2005-02-01

    The spectral responsivity of two commercially available InSb detectors with low-pass cold filters attached on their cold shields for optimum operation in the 1.6-2.6 µm wavelength range was observed to drift slowly with time. The origin of these drifts was investigated. The drifts were shown to arise due to a thin film of water-ice deposition on the cold low-pass filters mounted on the cold shields of the two detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the filter, thus giving rise to the observed drifts. The drifts were completely eliminated by evacuating the detector dewars while baking them at 50 °C for 72 h. This work confirms that infrared detectors employing cold multi-layer dielectric filters should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to space instruments which use cryogenically cooled infrared filter radiometers for earth observation. The deposition of a thin film of ice on the cold band-pass filters can account for the oscillatory drifts observed in the response of some of the channels of the ATSR-2, and Landsat-3 and Landsat-5 space missions.

  14. Growth of InSb and InI Crystals on Earth and in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Churilov, A.; Volz, M. P.; Riabov, V.; Van den Berg, L.

    2015-01-01

    During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in space laboratories. The subsequent analysis of the space-grown crystals revealed (i) that weak convection existed in virtually all melt-growth experiments, (ii) de-wetting significantly reduced the level of stress-induced defects, and (iii) particularly encouraging results were obtained in vapor-growth experiments. In 2002, following a decade of ground based research in growing doped Ge and GaSb crystals, a series of crystal growth experiments was performed at the ISS, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation. Te- and Zn-doped InSb crystals were grown from the melt. The specially designed furnace provided a side-view of the melt and precise seeding measurement of the growth rate. At present, under sponsorship of CASIS (Center for the Advancement of Science in Space, www.iss-casis.org), we are conducting ground-based experiments with indium mono-iodide (InI) in preparation for the "SUBSA II" ISS investigation, planned for 2017. The experiments include: i) Horizontal Bridgman (HB) growth and ii) Vapor Transport (VT) growth. Finite element modeling will also be conducted, to optimize the design of the flight ampoules, for vapor and melt growth.

  15. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  16. Anomalous oscillations of the Josephson supercurrent in InSb nanowires

    NASA Astrophysics Data System (ADS)

    Geresdi, Attila; Szombati, Dániel B.; Cornelissen, Ludo J.; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.

    2014-03-01

    Semiconductor nanowires proximity coupled to superconducting leads provide an ideal experimental platform to investigate the Josephson effect in tunable ballistic channels in the presence of strong spin-orbit coupling and large Landé g-factor. The interplay of an external magnetic field perpendicular to the intrinsic spin-orbit field may lead to an anomalous supercurrent which is a proposed signature of the coupling between two Majorana modes through the channel. Here we present our experimental studies of the Josephson supercurrent in InSb nanowires. Ohmic contacts to bulk superconductor NbTiN leads enable us to trace supercurrents up to B = 3 T magnetic field. The gate control over the channel allows us to investigate the amplitude of the critical current from the tunneling regime to a few transparent modes, where nonsinusoidal current-phase relationship (CPR) is expected, verified by the presence of fractional Shapiro steps under microwave irradiation. The evolution of the critical current with the external magnetic field is shown to exhibit non-monotonic behavior depending on the gate configuration, consistently with the theory of Josephson junctions hosting Majorana modes.

  17. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    SciTech Connect

    Kang, Nam Lyong

    2014-12-07

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  18. Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.

    NASA Technical Reports Server (NTRS)

    Eldumiati, I. I.; Haddad, G. I.

    1973-01-01

    A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-

  19. 60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect

    Datta, D. P.; Garg, S. K.; Som, T.; Satpati, B.; Kanjilal, A.; Dhara, S.; Kanjilal, D.

    2014-10-14

    Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  20. Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.

    PubMed

    Ardakani, Abbas Ghasempour

    2013-06-20

    We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated. PMID:23842164

  1. GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Hamaida, K.; Bouslama, M.; Ghaffour, M.; Besahraoui, F.; Chelahi-Chikr, Z.; Ouerdane, A.; Abdellaoui, A.; Gendry, M.

    2012-12-01

    Recently, the development of indium oxide such as In2O3 on the III-V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable research due to many methods of its synthesis. In our study, we were interested in developing the indium oxide In2O3 on the In metal and InSb surfaces by electron beam stimulated oxidation. The formation of In2O3 on InSb was advantaged by a previous treatment due to the sputtering of the surface by the argon ions at low energy 300 eV with a current density 2 μA/cm2 followed by heating in UHV at 300°C. Our results were monitored by the analysis techniques including the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) well suited to study the surface with respect to physical structure and chemical composition.

  2. Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.

    PubMed

    Ardakani, Abbas Ghasempour

    2013-06-20

    We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated.

  3. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    SciTech Connect

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q. E-mail: hongqi.xu@ftf.lth.se

    2015-09-07

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  4. Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

    NASA Astrophysics Data System (ADS)

    Firsov, D. D.; Komkov, O. S.; Solov’ev, V. A.; Kop’ev, P. S.; Ivanov, S. V.

    2016-07-01

    Photoluminescence (PL) properties of type-II InSb/InAs periodic nanostructures containing above-monolayer (ML)-thick InSb insertions, grown by molecular beam epitaxy, are studied by using an FTIR spectrometer in wide temperature range. The samples exhibit bright PL in the 3.5–5.5 μm range, which is attributed to recombination of holes localized in InSb with electrons accumulated nearby in the InAs matrix. An increase in the InSb nominal thickness from 1 ML to 1.6 ML results in an increase of the PL peak wavelength up to 5.5 μm (300 K), and significantly improves luminescence intensity at 300 K due to a twice larger energy of hole localization. The InSb/InAs nanostructures also demonstrate an anomalous ‘blue’ shift of the PL peak energy as the temperature increases in the 12–80 K range, which is attributed to the thermally induced population of localized states in the InSb insertions, emerging due to composition/thickness fluctuations. Sb segregation in the cap InAs barrier smooths the potential inhomogeneities in the insertions, which reduces the broadening parameter.

  5. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    SciTech Connect

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D.

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  6. Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

  7. Laser damage tests on InSb photodiodes at 1.064 micron and 0.532 micron

    NASA Technical Reports Server (NTRS)

    Bearman, G. H.; Staller, C.; Mahoney, C.

    1992-01-01

    InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.

  8. The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field

    SciTech Connect

    Gadjialiev, M. M. Pirmagomedov, Z. Sh.

    2009-08-15

    Thermopower of the Corbino disc made of InSb with n{sub 77} = 2 x 10{sup 14} cm{sup -3} in a transverse magnetic field as high as 30 kOe at temperatures of 60, 67, and 80 K is studied. It is established that the diffusion fraction of thermopower in a quantizing magnetic field rises according to the power law H{sup 2.2} at all mentioned temperatures. By the magnitude of saturation thermopower {alpha}{sub xx}({infinity}) in a high field, the scattering mechanism of charge carriers is determined. It is established that in a temperature region of 60-80 K, the electrons are scattered by acoustic phonons.

  9. Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sun, Changhong; Hu, Shuhong; Wang, Qiwei; Qiu, Feng; Lv, Yingfei; Deng, Huiyong; Sun, Yan; Dai, Ning

    2012-10-01

    Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

  10. Direct Imaging of the InSb(001)-c(8×2) Surface: Evidence for Large Anisotropy of the Reconstruction

    NASA Astrophysics Data System (ADS)

    Mishima, T. D.; Naruse, N.; Cho, S. P.; Kadohira, T.; Osaka, T.

    2002-12-01

    We have observed the InSb(001)-c(8×2) surface by using high-resolution transmission electron microscopy in the profile-imaging geometry. All images observed at temperatures up to 420 °C agree well with the c(8×2) model reported by Kumpf et al. [

    Phys. Rev. Lett.PRLTAO0031-9007 86, 3586 (2001)
    ]. 1/30 sec real-time observations at 420 °C evidence that a part of the subsurface and surface layers (called a gull-type segment) undergo switching to and from a bulk configuration. The finding is suggestive of large anisotropy in the mean square displacement of the c(8×2) surface.

  11. Influence of Contact Angle, Growth Angle and Melt Surface Tension on Detached Solidification of InSb

    NASA Technical Reports Server (NTRS)

    Wang, Yazhen; Regel, Liya L.; Wilcox, William R.

    2000-01-01

    We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130, which is significantly less than required if both ends of the ampoule are open.

  12. Structures of Liquid GaSb and InSb Studied with the Extended X-Ray-Absorption Fine-Structure Method

    NASA Astrophysics Data System (ADS)

    Wang, Yuren; Lu, Kunquan; Li, Chenxi

    1997-11-01

    The extended x-ray-absorption fine-structure technique is applied to study the local atomic structures of liquid GaSb and InSb using an improved sample holding method. The partial pair distribution functions and coordination distributions of the two liquids are given by using reverse Monte Carlo simulation. The coordination numbers in liquid GaSb are mostly 5 and 6, in addition to which there are about 15% of 4 coordination and about 10% of 7 coordination. On average, the coordination number is 5.4. The results are similar in liquid InSb. This structural study provides some hints of the metallic behavior and density increase in the liquid.

  13. Observation of Structural Anisotropy and the Onset of Liquid-like Motion during the Non-thermal Melting of InSb

    SciTech Connect

    Gaffney, K.J.; Lindenberg, A.M.; Larsson, J.; Sokolowski-Tinten, K.; Blome, C.; Synnergren, O.; Sheppard, J.; Caleman, C.; MacPhee, A.G.; Weinstein, D.; Lowney, D.P.; Allison, T.K.; Matthews, T.; Falcone, R.W.; Cavalieri, A.L.; Dritz, D.M.; Lee, S.H.; Bucksbau, P.H.p a Reis, D.A.; Rudati, J.; Macrander, A.T.; Fuoss, P.H.; /Argonne /BNL, NSLS /Chicago U. /Bohr Inst. /DESY /Duisburg U. /ESRF, Grenoble /LLNL, Livermore /Lund Inst. Tech. /Oxford U. /Uppsala U. /SLAC /SLAC, SSRL

    2005-09-30

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquid-like dynamics. They also demonstrate that the root mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  14. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

    SciTech Connect

    Zhang Guodong; Sun Weiguo; Xu Shuli; Zhao Hongyan; Su Hongyi; Wang Haizhen

    2009-07-15

    InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

  15. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect

    Trinh, Hai-Dang; Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho; Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia; Wang, Shin-Yuan; Yi Chang, Edward

    2013-09-30

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup −4} A/cm{sup −2}. The D{sub it} value of smaller than 10{sup 12} eV{sup −1}cm{sup −2} has been obtained using conduction method.

  16. Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

    NASA Astrophysics Data System (ADS)

    Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

    2016-08-01

    We propose a high electron mobility transistor with a pseudomorphically strained InSb channel (InSb-PHEMT) having an InSb composite channel layer in which the Al y In1‑ y Sb sub-channel layer is inserted between the InSb channel and the Al x In1‑ x Sb barrier layers to increase the conduction-band offset (ΔE C) at the heterointerface between the InSb channel and the Al x In1‑ x Sb barrier layers. The energy states for the proposed InSb-PHEMTs are calculated using our analytical method, taking account of the nonparabolicity of the conduction band. For the proposed InSb-PHEMTs, putting the sub-channel layers into the channel is found to be effective for obtaining a sufficiently large ΔE C (∼0.563 eV) to restrain electrons in the channel and increase the sheet concentration of two-dimensional electron gas to as high as 2.5 × 1012 cm‑2, which is comparable to that of InAs-PHEMTs. This also leads to a large transconductance of PHEMTs. In the proposed InSb-PHEMTs, electrons are strongly bound to the channel layer compared with InAs-PHEMTs, despite the effective mass at the conduction band (0.0139 m 0) of InSb being smaller than that of InAs and ΔE C for the InSb-PHEMTs being 25% smaller than that for the InAs-PHEMTs. This is because the bandgap energy of InSb is about one-half that of InAs, and hence, the nonparabolicity parameter of InSb is about twice as large as that of InAs.

  17. Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

    NASA Astrophysics Data System (ADS)

    Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

    2016-08-01

    We propose a high electron mobility transistor with a pseudomorphically strained InSb channel (InSb-PHEMT) having an InSb composite channel layer in which the Al y In1- y Sb sub-channel layer is inserted between the InSb channel and the Al x In1- x Sb barrier layers to increase the conduction-band offset (ΔE C) at the heterointerface between the InSb channel and the Al x In1- x Sb barrier layers. The energy states for the proposed InSb-PHEMTs are calculated using our analytical method, taking account of the nonparabolicity of the conduction band. For the proposed InSb-PHEMTs, putting the sub-channel layers into the channel is found to be effective for obtaining a sufficiently large ΔE C (˜0.563 eV) to restrain electrons in the channel and increase the sheet concentration of two-dimensional electron gas to as high as 2.5 × 1012 cm-2, which is comparable to that of InAs-PHEMTs. This also leads to a large transconductance of PHEMTs. In the proposed InSb-PHEMTs, electrons are strongly bound to the channel layer compared with InAs-PHEMTs, despite the effective mass at the conduction band (0.0139 m 0) of InSb being smaller than that of InAs and ΔE C for the InSb-PHEMTs being 25% smaller than that for the InAs-PHEMTs. This is because the bandgap energy of InSb is about one-half that of InAs, and hence, the nonparabolicity parameter of InSb is about twice as large as that of InAs.

  18. Spectral irradiance responsivity calibration of InSb radiometers using the improved IR-SIRCUS at NIST

    NASA Astrophysics Data System (ADS)

    Zeng, Jinan; Yoon, Howard W.; Eppeldauer, George P.; Hanssen, Leonard M.; Rice, Joseph P.

    2009-08-01

    The spectral irradiance responsivity calibrations of InSb radiometers measured on the tunable-laser based Infrared Spectral Irradiance and Radiance Responsivity Calibration with Uniform Sources (IR-SIRCUS) facility are discussed. This work describes the following changes undertaken to reduce the uncertainties of the calibrations: improve the spatial uniformity, reduce the laser-induced speckle from the gold-coated integrating spheres between 1 μm and 5 μm, improve the stability of the optical parametric oscillator (OPO) tunable laser, reduce the noise from the signal-to-monitor ratio, increase the repeatability of measurements, and reduce the stray light and fringe problems of the radiometer under test. Measurements of the spatial uniformity with the use of polytetrafluoroethylene (PTFE) and gold-coated integrating spheres at different wavelengths have been performed. Different approaches for generating a uniform source, removing the speckle, stabilizing the laser, and improving the signal-to-monitor ratio are also described. The spatial non-uniformity after using these approaches has been shown to be reduced to < 1 %. The uncertainty budget of spectral irradiance responsivity calibrations is discussed, and is found to be mainly due to the measurement repeatability uncertainty component of 1 %. Calibrated radiometers are tested against a source-based scale from the calculated spectral irradiances obtained using a precision aperture and a blackbody (BB) with a known temperature.

  19. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    NASA Astrophysics Data System (ADS)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  20. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates

    NASA Astrophysics Data System (ADS)

    Gray, Nathan W.; Perez-Rubio, Victor; Bolke, Joseph G.; Alexander, W. B.

    2014-10-01

    Focal plane arrays (FPAs) made on InSb wafers are the key cost-driving component in IR imaging systems. The electronic and crystallographic properties of the wafer directly determine the imaging device performance. The "facet effect" describes the non-uniform electronic properties of crystals resulting from anisotropic dopant segregation during bulk growth. When the segregation coefficient of dopant impurities changes notably across the melt/solid interface of a growing crystal the result is non-uniform electronic properties across wafers made from these crystals. The effect is more pronounced in InSb crystals grown on the (111) axis compared with other orientations and crystal systems. FPA devices made on these wafers suffer costly yield hits due to inconsistent device response and performance. Historically, InSb crystal growers have grown approximately 9-19 degree off-axis from the (111) to avoid the facet effect and produced wafers with improved uniformity of electronic properties. It has been shown by researchers in the 1960s that control of the facet effect can produce uniform small diameter crystals. In this paper, we share results employing a process that controls the facet effect when growing large diameter crystals from which 4, 5, and 6" wafers can be manufactured. The process change resulted in an increase in wafers yielded per crystal by several times, all with high crystal quality and uniform electronic properties. Since the crystals are grown on the (111) axis, manufacturing (111) oriented wafers is straightforward with standard semiconductor equipment and processes common to the high-volume silicon wafer industry. These benefits result in significant manufacturing cost savings and increased value to our customers.

  1. ASTROCAM: offner re-imaging 1024 X 1024 InSb camera for near-infrared astrometry on the USNO 1.55-m telescope

    NASA Astrophysics Data System (ADS)

    Fischer, Jacqueline; Vrba, Frederick J.; Toomey, Douglas W.; Lucke, Bob L.; Wang, Shu-i.; Henden, Arne A.; Robichaud, Joseph L.; Onaka, Peter M.; Hicks, Brian; Harris, Frederick H.; Stahlberger, Werner E.; Kosakowski, Kris E.; Dudley, Charles C.; Johnston, Kenneth J.

    2003-03-01

    In order to extend the US Naval Observatory (USNO) small-angle astrometric capabilities to near infrared wavelengths we have designed and manufactured a 1024 x 1024 InSb re-imaging infrared camera equipped with an array selected from the InSb ALADDIN (Advanced Large Area Detector Development in InSb) development program and broadband and narrowband 0.8 - 3.8 μm filters. Since the USNO 1.55-m telescope is optimized for observations at visible wavelengths with an oversized secondary mirror and sky baffles, the straylight rejection capabilities of the ASTROCAM Lyot stop and baffles are of critical importance for its sensitivity and flat- fielding capabilities. An Offner relay was chosen for the heart of the system and was manufactured from the same melt of aluminum alloy to ensure homologous contraction from room temperature to 77 K. A blackened cone was installed behind the undersized hole (the Lyot stop) in the Offner secondary. With low distortion, a well-sampled point spread function, and a large field of view, the system is well suited for astrometry. It is telecentric, so any defocus will not result in a change of image scale. The DSP-based electronics allow readout of the entire array with double-correlated sampling in 0.19 seconds, but shorter readout is possible with single sampling or by reading out only small numbers of subarrays. In this paper we report on the optical, mechanical, and electronic design of the system and present images and results on the sensitivity and astrometric stability obtained with the system, now operating routinely at the 1.55-m telescope with a science-grade ALADDIN array.

  2. Studies related to the magnetic-field-induced metal-insulator transition in n-type InSb

    NASA Astrophysics Data System (ADS)

    Abdul-Gader, Mousa Mohammad

    Measurements of the longitudinal and transverse resistivities of several n-type InSb samples with carrier densities in the range 2 to 7 x 10 cm-3 have been made as a function (a) of temperature ([greater or equal to] 0.04K) at constant magnetic field and (b) of magnetic field ( [less or equal to] 70KG) at constant temperature. A metal-insulator (MI) transition has been found to occur in the sample under study at a certain magnetic field Hc, dependent on the carrier concentration n. On the metallic side of this magnetically induced has been used to interpret the magnetic-field variation of the observed conductivity at very low temperatures. Good agreement is obtained in the vicinity of the transition with the critical exponent v ranging between 0.8 and nearly metallic region of the transition the temperature dependence of the conductivity obeys the relation ?(T) = qq+ mT + BT for T [lesser or equal to]1.5K. When the magnetic field is reduced sufficiently so that the sample becomes like a metal but still remaining in the extreme quantum limit, the resistivity becomes independent of temperature and agrees with the magnetoresistance theory of Roth and Argyres (1966) with the screening radius given by Wallace (1974a and b). In the insulator region of the transition, the low-temperature dependence of the resistivity is represented by [rho] = [rho]0exp (T0/T)x predicted for variable range hopping ° conduction, but no common value of x has been observed and it was in the range 1/4 to 1/2. For any temperature dependence in this regime, To is found to increase with increasing magnetic field and the discrepancy between the experimental and theoretical values of To is attributed to correlation effects.

  3. Experimental determination of the inelastic mean free path of electrons in GaSb and InSb

    NASA Astrophysics Data System (ADS)

    Gergely, G.; Sulyok, A.; Menyhard, M.; Toth, J.; Varga, D.; Jablonski, A.; Krawczyk, M.; Gruzza, B.; Bideux, L.; Robert, C.

    1999-04-01

    The inelastic mean free path (IMFP) of electrons is a fundamental material parameter for quantitative surface- and thin-film analysis by AES and XPS. Experimental determination of IMFP is based on the elastic peak electron spectroscopy (EPES) The intensity of the elastic peak recorded for the sample is compared with that of the Ni reference. The IMFP is evaluated from the Monte Carlo (MC) calculations of the elastic backscattering probability. The MC algorithm is based on elastic scattering cross-sections from the NIST 64 database and IMFP values of Ni. Experiments have been carried out in three laboratories working with different types of electron spectrometers and energy ranges: HSA, E=0.2-5 keV; CMA, E=0.2-2 keV, and RFA, E=0.2-1.5 keV. GaSb(100) and InSb(100) samples have been cleaned and their surface layer amorphized by an Ar + ion bombardment at Eion=2 keV. The surface composition after cleaning was checked in situ by XPS. No metallic Ga, In or Sb phases were evidenced by plasmon losses on the surface after Eion=2 keV Ar + ion treatment. The MC calculations were based on the real surface composition. Thus, the IMFP values experimentally obtained for the ion bombarded samples can be considered as the volume parameters for E>0.5 keV. A reasonable agreement was found with the calculated IMFP data of NIST and with other theoretically determined values of the IMFP.

  4. p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Bedair, S. M.

    1985-01-01

    p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.

  5. Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs

    NASA Astrophysics Data System (ADS)

    Litvinenko, K. L.; Leontiadou, M. A.; Li, Juerong; Clowes, S. K.; Emeny, M. T.; Ashley, T.; Pidgeon, C. R.; Cohen, L. F.; Murdin, B. N.

    2010-03-01

    Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4 T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D'yakonov-Perel' dephasing process is suppressed. At the high field limit the Elliot-Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.

  6. First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Xie, Zhong-Xiang; Yu, Xia; Wang, Hai-Bin; Deng, Yuan-Xiang; Ning, Feng

    2016-08-01

    Using first-principle calculations with density functional theory, we investigated the modification of electronic properties in zinc-blende (ZB) and wurtzite (WZ) InSb nanowires (NWs) grown along the [111] and [0001] directions for different size, different surface coverage and different mechanical strain. The results show that before the surface passivation, ZBNWs and WZNWs exhibit the metallic character and the semiconductor character, respectively. WZNWs show a crossover from a direct to an indirect as diameter decreases. After the surface passivation, both ZBNWs and WZNWs are found to be direct-gap character. The electronic band structure shows a significant response to changes in surface passivation with pseudo hydrogen and halogen. The band structure with mechanical strain is strongly dependent on the crystal orientation and the NW diameter. In ZBNWs, compressive strain induces the indirect band gap character, whereas tensile strain can not form it. WZNWs have various strain dependence in that both compressive and tensile strain make InSb show a direct band gap character. A brief analysis of these results is given.

  7. Drifts exhibited by cryogenically cooled InSb infrared filtered detectors and their importance to the ATSR-2 and Landsat-5 Earth observation missions.

    PubMed

    Theocharous, Evangelos

    2005-07-10

    The spectral responsivity of commercially available InSb detectors with low-pass cold filters attached to their cold shields for optimum operation in the 1.6-2.6 microm wavelength range is observed to drift slowly with time. These drifts are shown to arise because of a thin film of water-ice deposited on the cold low-pass filters mounted on the cold shields of the detectors. The temporal characteristics of these drifts are shown to strongly depend on wavelength. A model is proposed for the behavior of the water present in the Dewar vacuum, which can explain and predict the temporal characteristics of the observed drifts for all wavelengths. These observations are particularly relevant to space instruments that use cryogenically cooled IR filter radiometers for Earth observation. The temporal profile of drifts observed in missions such as Landsat-5 is identical to that observed in cryogenically cooled filtered InSb detectors during laboratory measurements. This study confirms that the deposition of a thin film of a material such as ice on the cold bandpass filters and windows is therefore the most likely source of the oscillatory drifts observed in the response of some of the channels of the ATSR-2, Landsat-4, and Landsat-5 Earth observation missions.

  8. Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Jayavel, P.; Kobayashi, Y.; Arafune, K.; Koyama, T.; Kumagawa, M.; Hayakawa, Y.

    2005-10-01

    We have investigated the structural and electrical properties of InAsxSb1-x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1-x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min-1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements.

  9. Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

    NASA Astrophysics Data System (ADS)

    Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.; Liu, X.; Furdyna, J.; Khodaparast, G. A.

    2016-01-01

    In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.

  10. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; Zhao, Xin-Hao

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  11. Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

    NASA Astrophysics Data System (ADS)

    He, J. L.; Hu, W. D.; Ye, Z. H.; Lv, Y. Q.; Chen, X. S.; Lu, W.

    2016-09-01

    The design of a reflection-type subwavelength microstructure has been numerically investigated to concentrate incident light onto pixels for improved photoresponse of InSb infrared focal-plane arrays. Compared with traditional microlenses placed on top of the detector substrate, this reflection-type microstructure is better suited for extremely small pixel pitches. The structure is simulated using a joint numerical method combining the finite-difference time-domain method based on Maxwell's curl equations and the finite-element method based on the Poisson and continuity equations. The results show that this advanced design could effectively improve device response without sacrificing crosstalk. The optimal structure parameters are obtained theoretically, with response increase of approximately 100%.

  12. High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

    NASA Astrophysics Data System (ADS)

    Nesher, O.; Pivnik, I.; Ilan, E.; Calalhorra, Z.; Koifman, A.; Vaserman, I.; Oiknine Schlesinger, J.; Gazit, R.; Hirsh, I.

    2009-05-01

    Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), which are currently used in many applications worldwide. SCD's production line includes many different types of InSb FPA with formats of 320x256, 480x384 and 640x512 elements and with pitch sizes in the range of 15 to 30 μm. All these FPAs are available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA) with either closed-cycle Sterling or open-loop Joule-Thomson coolers. With an increasing need for higher resolution, SCD has recently developed a new large format 2-D InSb detector with 1280x1024 elements and a pixel size of 15μm. The InSb 15μm pixel technology has already been proven at SCD with the "Pelican" detector (640x512 elements), which was introduced at the Orlando conference in 2006. A new signal processor was developed at SCD for use in this mega-pixel detector. This Readout Integrated Circuit (ROIC) is designed for, and manufactured with, 0.18 μm CMOS technology. The migration from 0.5 to 0.18 μm CMOS technology supports SCD's roadmap for the reduction of pixel size and power consumption and is in line with the increasing demand for improved performance and on-chip functionality. Consequently, the new ROIC maintains the same level of performance and functionality with a 15 μm pitch, as exists in our 20 μm-pitch ROICs based on 0.5μm CMOS technology. Similar to Sebastian (SCD ROIC with A/D on chip), this signal processor also includes A/D converters on the chip and demonstrates the same level of performance, but with reduced power consumption. The pixel readout rate has been increased up to 160 MHz in order to support a high frame rate, resulting in 120 Hz operation with a window of 1024×1024 elements at ~130 mW. These A/D converters on chip save the need for using 16 A/D channels on board (in the case of an analog ROIC) which would operate at 10 MHz and consume about 8Watts A Dewar has been

  13. Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

    NASA Astrophysics Data System (ADS)

    Çakan, Aslı; Sevik, Cem; Bulutay, Ceyhun

    2016-03-01

    The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.

  14. Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    SciTech Connect

    Tuominen, M. E-mail: pekka.laukkanen@utu.fi; Lång, J.; Dahl, J.; Yasir, M.; Mäkelä, J.; Punkkinen, M. P. J.; Laukkanen, P. E-mail: pekka.laukkanen@utu.fi; Kokko, K.; Kuzmin, M.; Osiecki, J. R.; Schulte, K.

    2015-01-05

    The pre-oxidized crystalline (3×1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3×1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3×1)-O consists of In atoms with unexpected negative (between −0.64 and −0.47 eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.

  15. Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Chen, Y. C.; Bhattacharya, P. K.; Tsukamoto, S.

    1989-01-01

    Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

  16. STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

    2012-02-01

    The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

  17. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S. Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  18. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

    NASA Astrophysics Data System (ADS)

    Lu, Jing; DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi; Zhang, Yong-Hang; Kovacs, Andras; Dunin-Borkowski, Rafal E.; Smith, David J.

    2016-04-01

    A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

  19. Bit-Error-Rate Evaluation of Super-Resolution Near-Field Structure Read-Only Memory Discs with Semiconductive Material InSb

    NASA Astrophysics Data System (ADS)

    Nakai, Kenya; Ohmaki, Masayuki; Takeshita, Nobuo; Hyot, Bérangère; André, Bernard; Poupinet, Ludovic

    2010-08-01

    Bit-error-rate (bER) evaluation using hardware (H/W) evaluation system is described for super-resolution near-field structure (super-RENS) read-only-memory (ROM) discs fabricated with a semiconductor material, In-Sb, as the super-resolution active layer. bER on the order of 10-5 below a criterion of 3.0×10-4 is obtained with the super-RENS ROM discs having random pattern data including a minimum pit length of 80 nm in partial response maximum likelihood of the (1,2,2,1) type. The disc tilt, focus offset, and read power offset margins based on bER of readout signals are measured for the super-RENS ROM discs and are almost acceptable for practical use. Significant improvement of read stability up to 40,000 cycles realized by introducing the ZrO2 interface layer is confirmed using the H/W evaluation system.

  20. Effect of Rashba spin-orbit coupling on the electronic, thermodynamic, magnetic and transport properties of GaAs, InAs and InSb quantum dots with Gaussian confinement

    NASA Astrophysics Data System (ADS)

    Boda, Aalu; Boyacioglu, Bahadir; Erkaslan, Ugur; Chatterjee, Ashok

    2016-10-01

    The effect of Rashba spin-orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin-orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots.

  1. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  2. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

    NASA Astrophysics Data System (ADS)

    Gmitra, Martin; Fabian, Jaroslav

    2016-10-01

    We employ first-principles techniques tailored to properly describe semiconductors (semilocal exchange potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at the zone center, by fitting the spin splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms—third-order polynomials. We also determine the orientations of the spin-orbit vector fields (for conduction bands) and the average spins (valence bands) in the momentum space. We describe the dependence of the spin-orbit parameters on the cation and anion atomic weights. These results should be useful for spin transport, spin relaxation, and spin optical orientation modeling of semiconductor heterostructures, as well as for realistic studies of semiconductor-based Majorana nanowires, for which accurate values of spin-orbit couplings are needed.

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    ..., 2010. ADDRESSES: You may submit comments, identified by FR 2046, FR 2060, FR 2572, FR 4006, FR 4008, FR 4010, FR 4011, FR 4012, FR 4017, FR 4019, FR 4023, FR 4013, or FR 4014 by any of the following methods...: Report of Selected Balance Sheet Items for Discount Window Borrowers. Agency form numbers:......

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    2010-02-03

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  8. Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-01-01

    Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure of Bi containing alloys such as InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix due to the incorporation of dilute concentrations of bismuth. The coupling parameter CBi which gives the magnitude of interaction of Bi impurity states with the LH, HH and SO sub bands in VBAC depends on the increase in the HH/LH related energy level EHH/LH+, location of the Bi related impurity level EBi and valence band offset ΔEVBM between the endpoint compounds in the corresponding III-V-Bi. The reduction in band gap as well as the enhancement of the spin-orbit splitting energy is well explained using this model and the calculated results are compared with the results of Virtual Crystal Approximation (VCA) and Density Functional Theory (DFT) calculations, as well as with the available experimental data and are found to have good agreement. The incorporation of Bi mainly perturbs the valence band due to the interaction of the Bi impurity states with the HH, LH and SO bands. The lowering of the conduction band minimum (CBM) due to VCA is added with the upward movement of the HH/LH bands to get the total reduction in band gap for the bismides. The valence band shifts of 31.9, 32.5, 20.8 and 12.4 meV/at%Bi for InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix respectively constitute 65, 76, 59 and 31% of the total band gap reduction and the rest is the contribution of the conduction band shift. The spin-orbit splitting energy also shows significant increase with the maximum change in InPBi and the minimum in InSbBi. The same is true for Ga containing bismides if we make a comparison with the available values for GaAsBi and GaPBi with that of GaSbBi. It has also been observed that the increase in splitting energy is greater in case of the bismides such as InAsBi, InPBi and GaAsBi than the bismides such as InSbBi and GaSbBi with the parent substrates having higher values of splitting energy. This may

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    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 30285; 63 FR 54519; 67 FR 68719; 68 FR 2629; 68 FR 1654; 69 FR 61292; 69 FR 33997; 69 FR 71098; 69 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  5. 75 FR 64396 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-19

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 67 FR 57266; 69 FR 52741; 71 FR 53489; 73 FR 65009; 73 FR 63047; 71 FR 32183; 71 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  6. 78 FR 65032 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-30

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 33990; 68 FR 35772; 70 FR 33937; 72 FR 32705; 74 FR 26464; 76 FR 34135; 76 FR 64169; 76 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  7. 78 FR 76704 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-18

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (70 FR 57353; 70 FR 72689; 72 FR 62897; 72 FR 67340; 73 FR 1395; 74 FR 60021; 74 FR 65845; 76 FR 70210; 76 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  8. 75 FR 27623 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568; 66 FR 63289; 69 FR 8260; 71 FR 16410; 73 FR 78186; 64 FR 68195; 65 FR 20251; 67 FR... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This......

  9. 76 FR 25762 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 65 FR 66286; 65 FR 78256; 66 FR 13825; 66 FR 16311; 67 FR 46016; 67 FR 57267; 67 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  10. 75 FR 19674 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-15

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 17102; 69 FR 17267; 71 FR 16410; 73 FR 28188; 68 FR 74699; 69 FR 10503; 71 FR... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This......

  11. 76 FR 12216 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-04

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 46016; 67 FR 57267; 67 FR 68719; 68 FR 13360; 68 FR 2629; 69 FR 51346; 70 FR... in the Federal Register on January 17, 2008 (73 FR 3316), or you may visit...

  12. 76 FR 44653 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-26

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 33990; 68 FR 35772; 70 FR 30999; 70 FR 33937; 70 FR 46567; 72 FR 32705; 72 FR 40359; 74 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  13. 76 FR 17483 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-29

    ...; 71 FR 41310; 71 FR 63379; 72 FR 180, 72 FR 1050; 72 FR 1053; 72 FR 7111; 72 FR 7812; 72 FR 11425; 72... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (63 FR 66226; 64 FR 16517; 65 FR 66286; 66 FR......

  14. 77 FR 60010 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-01

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (69 FR 33997; 69 FR 61292; 71 FR 32183; 71 FR 41310; 71 FR 55820; 73 FR 38497; 73 FR 48271; 73 FR 46973; 73 FR 54888; 73 FR 65009; 75 FR 39725; 75 FR 44050; 74......

  15. 75 FR 21823

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Date FR Cite ANPRM 12/00/10 Regulatory Flexibility Analysis Required: Undetermined Government Levels...: Action Date FR Cite NPRM 12/00/10 Regulatory Flexibility Analysis Required: Undetermined Government..., 202, 205, 211, 301, 302, and 303 of EO 11246, as amended; 30 FR 12319; 32 FR 14303, as amended by...

  16. 75 FR 21867

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ...) community. Timetable: Action Date FR Cite NPRM 04/00/10 Regulatory Flexibility Analysis Required: Yes Agency..., OTS, NCUA, and Farm Credit Administration. Timetable: Action Date FR Cite NPRM 06/09/09 74 FR 27386... contained in these rules as of December 1, 2011. Completed: Reason Date FR Cite Final Action 12/01/09 74...

  17. 75 FR 21749

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... by the Committee in extending quota- and duty-free treatment. Timetable: Action Date FR Cite NPRM To...: Action Date FR Cite NPRM 05/00/10 NPRM Comment Period End 07/00/10 Regulatory Flexibility Analysis... reduction schedule to meet the goals of the ISFMP. Timetable: Action Date FR Cite ANPRM 05/10/05 70 FR...

  18. 75 FR 21899

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... The rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite NPRM 03/10/08 73 FR.... This rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite NPRM 04/13/09 74 FR... September 30, 1993. This rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite...

  19. 75 FR 21903

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... Timetable: Action Date FR Cite NPRM 07/26/96 61 FR 39107 Order 07/26/96 61 FR 39084 NPRM Comment Period End 09/16/96 Notice to Refresh Record 03/27/03 68 FR 14939 Comment Period End 05/27/03 NPRM 10/15/04 69 FR 61184 Next Action Undetermined Regulatory Flexibility Analysis Required: Yes Agency Contact:...

  20. 77 FR 545 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-05

    ... for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 66 FR 53826; 66 FR 66966; 68 FR ] 10300; 68 FR 37197; 68 FR 48989; 68 FR 52811; 68 FR 61860; 68 FR 69434; 70 FR 41811; 70..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR......

  1. 77 FR 38384 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-27

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 65 FR 20245; 66 FR 30502; 66 FR 41654; 66 FR 53826; 66 FR 66966; 67 FR 10471; 67 FR 10475; 67 FR 15662; 67 FR 17102; 67......

  2. 76 FR 49531 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-10

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 30502; 66 FR 33990; 66 FR 41654; 68 FR 35772; 68 FR 37197; 68 FR 44837; 68 FR 48989; 70 FR 33937; 70 FR 41811; 70 FR 42615; 72......

  3. 76 FR 53129 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-25

    .... Reporters: FR Y-6: Top-tier domestic BHCs; FR Y-7: FBOs. Estimated annual reporting hours: FR Y-6: 28,796..., identified by FR Y-6, FR Y-7, FR Y- 9 reports, FR Y-11/11S, FR 2314/2314S, FR Y-8, FR Y-12/12A, FR Y-7Q, or FR Y-7N/NS, by any of the following methods: Agency Web Site:......

  4. 78 FR 77352 - Small Business Policy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-23

    ... process. Background NASA's small business policy, published August 17, 1993 [58 FR 43554], was established..., Small Business Programs [62 FR 36707, July 9, 1997, as amended at 64 FR 25215, May 11, 1999; 65 FR 38777, June 22, 2000; 65 FR 58932, Oct. 3, 2000; 67 FR 53947, Oct. 23, 2001; 69 FR 21765, Apr. 22, 2004],...

  5. 78 FR 75679 - Position Limits for Derivatives

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-12

    ...\\ Id. at 269. \\29\\ See 3 FR 3145, Dec. 24, 1938. \\30\\ See 2 FR 2460, Nov. 12, 1937. \\31\\ See 4 FR 3903, Sep. 14, 1939; 5 FR 3198, Aug. 28, 1940. \\32\\ See 16 FR 321, Jan. 12, 1951; 16 FR 8106, Aug. 16, 1951; see also 17 FR 6055, Jul. 4, 1952 (notice of hearing regarding proposed position limits for...

  6. 76 FR 12215 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-04

    ...; 72 FR 1050; 72 FR 1053; 72 FR 1056; 72 FR 7812; 72 FR 9397; 73 FR 36954; 73 FR 78442; 74 FR 8302... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63...

  7. 78 FR 51268 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-20

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (71 FR 14566; 71 FR 30227; 73 FR 27014; 75 FR 50799; 76 FR 17481; 76 FR 28125; 76 FR 29022; 76 FR 44082). Each... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER...

  8. 77 FR 48590 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-14

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 10471; 67 FR 19798; 67 FR 38311; 67 FR 46016; 67 FR 57267; 69 FR ] 51346; 71... on January 17, 2008 (73 FR 3316), or you may visit...

  9. 75 FR 38602 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-02

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR ] 51568; 64 FR 68195; 65 FR 20251; 67 FR 38311; 69 FR 26221; 71 FR 27033; 73 FR 52451; 69... Register published on April 11, 2000 (65 FR 19476). This information is also available at...

  10. 77 FR 34384 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-11

    ... must be submitted on or before August 10, 2012. ADDRESSES: You may submit comments, identified by FR Y-10, FR Y-10 verification, FR Y-10E, FR Y-6, or FR Y-7, by any of the following methods: Agency Web... Banking Organizations. Agency form number: FR Y-10, FR Y-10 verification, FR Y-6, and FR Y-7. OMB...

  11. 76 FR 55469 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (70 FR 17504; 70 FR 30997; 72 FR 27624; 72 FR 39879; 72 FR 46261; 72 FR 52419; 72 FR 54972; 74 FR 18437; 74...

  12. 77 FR 23797 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-20

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 10471; 67 FR 17102; 67 FR 19798; 67 FR 68719; 68 FR 2629; 68 FR 74699; 69...

  13. 77 FR 76166 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-26

    ... 1654; 69 FR 71098 71 FR 32183; 71 FR 41310; 71 FR 63379; 72 FR 1050; 72 FR 1054; 73 FR 75806; 73 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63......

  14. 76 FR 9865 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-22

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 20245; 65 FR 57230; 67 FR 57266; 69 FR 52741; 71 FR 55820; 71 FR 63379; 72 FR 180; 72 FR 9397; 72...

  15. 78 FR 77782 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-24

    ... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief, Medical Programs... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 40404; 64 FR 51568; 64 FR 66962; 66 FR 30502; 66 FR 41654; 66 FR 48504; 67 FR 17102; 68...

  16. 77 FR 10604 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-22

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (72 FR 46261; 72 FR 54972; 72 FR 58362; 72 FR 67340; 72 FR 67344; 73 FR 1395; 73 FR 35194; 73 FR 48275; 74...

  17. 77 FR 70885 - Uniform Compliance Date for Food Labeling Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-28

    ... Register of October 19, 1984 (49 FR 41019); December 24, 1996 (61 FR 67710); December 27, 1996 (61 FR 68145); December 23, 1998 (63 FR 71015); November 20, 2000 (65 FR 69666); December 31, 2002 (67 FR 79851); December 21, 2006 (71 FR 76599); December 8, 2008 (73 FR 74349); and December 15, 2010 (75 FR 78155). Use of...

  18. 77 FR 74730 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-17

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 65 FR 20246; 65 FR 45817; 65 FR 57230; 65 FR 77066; 66 FR 66969; 67 FR 46018; 67...

  19. 78 FR 66099 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-04

    ... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (70 FR 57353; 70 FR 72689; 72 FR 46261; 72 FR 54972; 72 FR 62897; 74 FR 43217; 74 FR 57551; 74 FR 60021; 76...

  20. 75 FR 77949 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-14

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 30285; 63 FR ] 54519; 65 FR 20245; 65 FR 57230; 67 FR 57266; 69 FR 52741; 71 FR 66217; 73 FR 74565;...

  1. 75 FR 70919 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-19

    ... 18, 2011. ADDRESSES: You may submit comments, identified by FR 28, FR H-5, or FR 3016, by any of the... Federal Reserve System. Agency form numbers: FR 28, FR 28s, FR 28i. OMB control number: 7100-0181... average hours per response: FR 28: 1 hour; FR 28s: 1 minute; FR 28i: 5 minutes. Number of respondents:...

  2. 77 FR 56262 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-12

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (69 FR 17263; 69 FR 31447; 71 FR 27033; 73 FR 35194; 73 FR 36954; 73 FR 48273; 75 FR 38602; 75 FR 39725; 75...

  3. 78 FR 30954 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-23

    ...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 76439; 68 FR 10298; 68 FR 13360; 68 FR 19598; 68 FR 33570; 70 FR 25878; 71......

  4. 78 FR 68137 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-13

    ...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 68195; 66 FR 30502; 68 FR 52811; 70 FR 48797; 71 FR 63379; 72 FR 39879; 72 FR 8417; 72...

  5. 76 FR 9859 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 45817; 65 FR 77066; 67 FR 71610; 67 FR 76439; 68 FR 10298; 70 FR 7545; 72 FR 7812; 74 FR 6689). Each of... on January 17, 2008 (73 FR 3316), or you may visit...

  6. 75 FR 81607 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... be conducted jointly with the CPO and CTO. The FR 3054d would be an annual survey to assess the... jointly with the U.S. Treasury's Bureau of Engraving and Printing and the CTO. The FR 3054a, FR 3054b, FR... 28, 2011. ADDRESSES: You may submit comments, identified by FR 1379; FR 2225; FR 3054; FR Y-3, FR...

  7. 75 FR 10692 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-09

    ... Communications Commission published in the Federal Register of February 2, 2010 (75 FR 5241), a document in the..., 2010 (75 FR 5241) to ensure that its rules governing the Maritime Radio Services continue to promote... (75 FR 5241). In rule FR Doc. 2010-2095 published on February 2, 2010 (75 FR 5241), make the...

  8. 76 FR 7101 - Airworthiness Directives; Hamilton Sundstrand Propellers Model 247F Propellers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-09

    ... October 8, 2010 (75 FR 62333). That SNPRM proposed to require removing affected propeller blades from... Policies and Procedures (44 FR 11034, February 26, 1979), (3) Will not affect intrastate aviation in Alaska..., FR2111, FR2123, FR2183, FR2187, FR2262, FR2276 through FR2279 inclusive, FR 2398, FR2449 to...

  9. Experience with the UKIRT InSb array camera

    NASA Technical Reports Server (NTRS)

    Mclean, Ian S.; Casali, Mark M.; Wright, Gillian S.; Aspin, Colin

    1989-01-01

    The cryogenic infrared camera, IRCAM, has been operating routinely on the 3.8 m UK Infrared Telescope on Mauna Kea, Hawaii for over two years. The camera, which uses a 62x58 element Indium Antimonide array from Santa Barbara Research Center, was designed and built at the Royal Observatory, Edinburgh which operates UKIRT on behalf of the UK Science and Engineering Research Council. Over the past two years at least 60% of the available time on UKIRT has been allocated for IRCAM observations. Described here are some of the properties of this instrument and its detector which influence astronomical performance. Observational techniques and the power of IR arrays with some recent astronomical results are discussed.

  10. 75 FR 21951

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... and Review'' of September 30, 1993, 58 FR 51735 (Oct. 4, 1993). Since the fall 2007 edition, the... jointly with the Federal Reserve on January 15, 2010 (75 FR 2724). There is further information about this... agencies discuss international effects of their rulemakings in The Regulatory Plan narrative. 74 FR...

  11. 77 FR 4903 - Trichoderma

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-01

    ... Register of March 10, 2010 (75 FR 11171) (FRL-8810- 8), EPA issued a notice pursuant to section 408(d)(3... Trichoderma virens strain GL-21) (40 CFR 180.1100)--see the Federal Register of September 20, 1995 (60 FR 48657) (FRL-4974-1) and October 5, 1995 (60 FR 52248) (FRL-4974-1). 2. Trichoderma harzianum...

  12. 75 FR 23515 - Assessments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-03

    ... assessment rates.\\6\\ \\5\\ 71 FR 69282. (Nov. 30, 2006). The FDIC also adopted several other final rules implementing the Reform Act, including a final rule on operational changes to part 327. 71 FR 69270 (Nov. 30... Institutions and Insured Foreign Branches in Risk Category I (the large bank guidelines).\\8\\ \\7\\ 71 FR...

  13. 77 FR 5178 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-02

    ... submissions; and formalizing the fingerprinting fee system. 76 FR 62684. III. Review of Public Comments In... should utilize to make revisions. 75 FR 70680. On April 4, 2011, after holding eight consultations and... consultation schedule and process for review. 76 FR 18457. Part 514 was included in the first regulatory...

  14. 76 FR 62684 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-11

    ... process NIGC should utilize to make revisions. 75 FR 70680. On April 4, 2011, after holding eight... out a consultation schedule and process for review. 76 FR 18457. Part 514 was included in the first... a Preliminary Draft of amendments to Part 514. 76 FR 26967. After considering the comments...

  15. 75 FR 21839

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... with Executive Order 12866 ``Regulatory Planning and Review'' (58 FR 51735; October 4, 1993) and the Department's Regulatory Policies and Procedures (44 FR 11034; February 26, 1979), the Department prepares a... agenda was published in the Federal Register on December 7, 2009 (74 FR 64470). The next one is...

  16. 75 FR 21871

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... http:// Not in FR www.epa.gov/lawsregs/ search/regagenda.html Semiannual Regulatory Flexibility Agenda... in FR main?main=DocketDetail&d=EPA-HQ- OA-2008-0265 and http:// www.epa.gov/lawsregs/ search/ail.html Rulemaking Gateway www.epa.gov/rulemaking/ Not in FR B. What Are EPA's Regulatory Goals, and What...

  17. 78 FR 32191 - Derivatives

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-29

    ... alternatives. \\5\\ 71 FR 5155 (February 2, 2012). C. 1998 IRPS This proposed rule is consistent with a 1998... promulgation of this proposed rule. \\7\\ 76 FR 37030 (June 24, 2011). First, the Board asked if it should... derivatives transactions independently. \\9\\ 77 FR 5416 (Feb. 3, 2012). Question One. The Board asked if...

  18. 75 FR 21963

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... Timetable: Action Date FR Cite NPRM 03/00/11 Regulatory Flexibility Analysis Required: Yes Agency Contact...: Action Date FR Cite NPRM 12/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact: Jennifer... Date FR Cite NPRM 09/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact: Anthony...

  19. 75 FR 21819

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Design. Timetable: Action Date FR Cite ANPRM 09/30/04 69 FR 58768 ] ANPRM Comment Period End 01/28/05... agenda pursuant to Executive Order 12866 ``Regulatory Planning and Review,'' 58 FR 51735, and the... Disabilities Act of 1990 (ADA). Those regulations include the ADA Standards for Accessible Design,...

  20. 77 FR 75496 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-20

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (69 FR 64806; 70 FR 2705; 72 FR 1056; 73 FR 76439; 75 FR 65057; 75 FR 79081; 75 FR 79084). Each of these 11... on January 17, 2008 (73 FR 3316), or you may visit...

  1. 75 FR 78155 - Uniform Compliance Date for Food Labeling Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-15

    ..., 1984 (49 FR 41019), December 24, 1996 (61 FR 67710), December 27, 1996 (61 FR 68145), December 23, 1998 (63 FR 71015), November 20, 2000 (65 FR 69666), December 31, 2002 (67 FR 79851), December 21, 2006 (71 FR 76599), and December 8, 2008 (73 FR 74349). Use of a uniform compliance date provides for...

  2. 75 FR 67721 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-03

    ..., 2011. ADDRESSES: You may submit comments, identified by FR Y-9C, FR Y-9LP, FR Y-11, FR 2314, FR Y-7N, or FR 2886b, by any of the following methods: Agency Web Site: http://www.federalreserve.gov . Follow... form number: FR Y-9C, FR Y-9LP. OMB control number: 7100-0128. Frequency: Quarterly. Reporters:...

  3. 76 FR 27882 - Requirements for Bicycles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-13

    ... first promulgated in 1978 (43 FR 60034 (Dec. 22, 1978)), with minor amendments in 1980 (45 FR 82627 (Dec. 16, 1980)), 1981 (46 FR 3204 (Jan. 14, 1981)), 1995 (60 FR 62990 (Dec. 8, 1995)), and 2003 (68 FR 7073 (Feb. 12, 2003)); 68 FR 52691 (Sept. 5, 2003)). In recent years, there have been...

  4. 77 FR 8072 - Semiannual Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ...: Action Date FR Cite Board Requested Comment 04/22/11 76 FR 22648 Board Expects Further Action........ 01... unpaid. Timetable: Action Date FR Cite Board Requested Comment 03/25/11 76 FR 16862 Board Expects Further...: Action Date FR Cite Board Requested Comment 08/03/11 76 FR 46652 Board Expects Further Action...........

  5. 75 FR 16000 - Temporary Employment of Foreign Workers in the United States

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-31

    ... enforcement provisions relating thereto. [43 FR 10312, Mar. 10, 1978, as amended at 52 FR 20507, June 1, 1987; 55 FR 50510, Dec. 6, 1990; 56 FR 24667, May 30, 1991; 56 FR 54738, Oct. 22, 1991; 56 FR 56875, Nov. 6, 1991; 57 FR 1337, Jan. 13, 1992; 57 FR 40989, Sept. 8, 1992; 69 FR 68226, Nov. 23, 2004; 73 FR...

  6. 76 FR 25534 - Airworthiness Directives; Hamilton Sundstrand Propellers Model 247F Propellers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ...@faa.gov . SUPPLEMENTARY INFORMATION: Airworthiness Directive 2011-04-02, amendment 39-16602 (76 FR..., FR2183, FR2187, FR2262, FR2276 through FR2279 inclusive, FR 2398, FR2449 to FR2958 inclusive, FR20010710... Propellers Model 247F Propellers AGENCY: Federal Aviation Administration (FAA), DOT. ACTION: Final...

  7. 76 FR 7091 - Notice of Intent To Require Reporting Forms for Savings and Loan Holding Companies

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-08

    ..., 2011. ADDRESSES: You may submit comments, identified by FR Y-6, FR Y-7, FR Y- 9C, FR Y-9LP, FR Y-9SP, FR Y-9ES, FR Y-9CS, FR Y-10, FR Y-11, FR 2314, FR Y-8, or FR Y-12, by any of the following methods... making applicable to SLHCs beginning with the March 31, 2012 reporting period would be FR Y-6,......

  8. 77 FR 13689 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-07

    ..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR FURTHER... exemption from the vision requirements (68 FR 74699; 69 FR 10503; 71 FR 6829; 73 FR 6242; 73 FR 16950; 73 FR 8392; 74 FR 65842; 75 FR 9477; 75 FR 9478). Each of these 20 applicants has requested renewal of...

  9. 75 FR 69165 - Conductor Certification

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-10

    ... by part 240, one should refer to the preamble discussions of 49 CFR 240.3 in 64 FR 60966, 60974 (Nov. 8, 1999), 63 FR 50626, 50636-50637 (Sept. 22, 1998), and 56 FR 28228, 28240 (June 19, 1991) for a... analysis of those definitions should refer to the part 240 rulemaking documents. See, 54 FR 50890 (Dec....

  10. 77 FR 8736 - Pasteuria nishizawae

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-15

    ... Register of February 4, 2011 (76 FR 6465) (FRL-8858- 7), EPA issued a notice pursuant to section 408(d)(3... December 28, 1994 (59 FR 66740) (FRL-4923-4) and June 30, 2010 (75 FR 37734) (FRL-8831-9) for final rules... Regulatory Planning and Review (58 FR 51735, October 4, 1993). Because this final rule has been exempted...

  11. 78 FR 1574 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... and stability to receive opioid addiction treatment medication. Timetable: Action Date FR Cite NPRM 06/19/09 74 FR 29153 NPRM Comment Period End 08/18/09 Final Action 12/06/12 77 FR 72752 Regulatory... FR Cite NPRM 03/00/13 Regulatory Flexibility Analysis Required: Yes. Agency Contact: Charles...

  12. 76 FR 40114 - Semiannual Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... evolving segment of the money services business (MSB) community. Timetable: Action Date FR Cite NPRM 06/28/10 75 FR 36589 NPRM Comment Period End 07/28/10 NPRM Comment Period Extended........ 08/28/10 75 FR... provide continuing education programs. Timetable: Action Date FR Cite NPRM 12/00/11 Regulatory...

  13. 76 FR 73993 - Remittance Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-30

    ... track the statutory provisions of Section 1073 of the Dodd-Frank Act. 76 FR 44761 (Jul. 27, 2011). The... final rule published on July 27, 2011, 76 FR 44761, without change. FOR FURTHER INFORMATION CONTACT... persons within its field of membership. 71 FR 62875 (Oct. 27, 2006) (interim final rule); 72 FR 7927...

  14. 78 FR 37930 - Lending Limits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-25

    ... interim final rule published on June 21, 2012, 77 FR 37277, and extended on December 31, 2012, 77 FR 76841... limits for savings associations.\\4\\ \\2\\ 77 FR 37265 (June 21, 2012). \\3\\ The OCC has rulemaking authority... this deduction. See generally 76 FR 56508. 1. Loans to Non-Consolidated Subsidiaries The former...

  15. 78 FR 44251 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    .... Timetable: Action Date FR Cite ANPRM (Sunscreen and Insect 02/22/07 72 FR 7941 Repellent). ANPRM Comment Period End 05/23/07 NPRM (UVA/UVB) 08/27/07 72 FR 49070 NPRM Comment Period End 12/26/07 Final Action (UVA/UVB) 06/17/11 76 FR 35620 NPRM (Effectiveness) 06/17/11 76 FR 35672 NPRM (Effectiveness)...

  16. 75 FR 70149 - Universal Service Support Mechanisms

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-17

    ... regulations have been approved by OMB: 54.5--71 FR 38796, July 10, 2006. 54.409(d)--69 FR 34600, June 22, 2004. 54.410--69 FR 34600, June 22, 2004. 54.416--69 FR 34601, June 22, 2004. 54.513(c)--69 FR 6191, Feb. 10, 2004. 54.514(b)--68 FR 36942, June 20, 2003. 54.609(d)(2)--68 FR 74502, Dec. 24, 2003....

  17. 77 FR 76167 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-26

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (67 FR 68719; 68 FR 2629; 69 FR 71100; 72 FR 1053; 73 FR 76440; 75 FR 80887). Each of these 8 applicants has... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316),...

  18. 78 FR 35363 - Marine Mammals; Incidental Take During Specified Activities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-12

    ... 1991 to 1996 (56 FR 27443; June 14, 1991) and 2008 to 2013 (73 FR 33212; June 11, 2008). These... issued from 1993 to present: November 16, 1993 (58 FR 60402); August 17, 1995 (60 FR 42805); January 28, 1999 (64 FR 4328); February 3, 2000 (65 FR 5275); March 30, 2000 (65 FR 16828); November 28, 2003...

  19. 78 FR 1941 - Marine Mammals; Incidental Take During Specified Activities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-09

    ... FR 27443; June 14, 1991) and 2008 to 2013 (73 FR 33212; June 11, 2008). These regulations are at 50... have been issued from 1993 to present: November 16, 1993 (58 FR 60402); August 17, 1995 (60 FR 42805); January 28, 1999 (64 FR 4328); February 3, 2000 (65 FR 5275); March 30, 2000 (65 FR 16828); November...

  20. 77 FR 13329 - Pandemic Influenza Vaccines-Amendment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-06

    ... Act. SUMMARY: Amendment to declaration issued on March 1, 2010 (75 FR 10268) pursuant to section 319F...: http://www.phe.gov/Preparedness/legal/prepact/Pages/default.aspx . \\1\\ 72 FR 4710 (2007). \\2\\ 72 FR 67731 (2007). \\3\\ 73 FR 61871 (2008). \\4\\ 74 FR 30294 (2009). \\5\\ 74 FR 51153 (2009). \\6\\ 75 FR...

  1. 77 FR 30532 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-23

    ...: Comments must be submitted on or before July 23, 2012. ADDRESSES: You may submit comments, identified by FR 2900, FR 2910a, FR 2915, FR 2930, FR 3052, or FR 3053, by any of the following methods: Agency Web Site... of Transaction Accounts, Other Deposits and Vault Cash. Agency form number: FR 2900. OMB...

  2. 76 FR 49769 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-11

    ... Holding Companies, and Annual Report of Foreign Banking Organizations. Agency form number: FR Y-10, FR Y-6, and FR Y-7. OMB control number: 7100-0297. Frequency: FR Y-10: Event-generated; FR Y-6 and FR Y-7... to the Report of Changes in Organizational Structure. Agency form number: FR Y-10E. OMB...

  3. 75 FR 9477 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-02

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This... for obtaining an exemption from the vision requirements (68 FR 74699; 69 FR 10503; 71 FR 6869; 71 FR 19928; 73 FR 6242; 73 FR 16950). Each of these 19 applicants has requested renewal of the exemption...

  4. 78 FR 798 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-04

    ... these individuals was made on the merits of each case and made only after careful consideration of the... on December 29, 2010 (75 FR 82132) at http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf... exemption from the vision requirements (63 FR 30285; 63 FR 54519; 65 FR 66293; 67 FR 68719; 68 FR 1654;...

  5. 75 FR 56641 - Self-Regulatory Organizations; Financial Industry Regulatory Authority, Inc.; Order Granting...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-16

    ..., 2010), 75 FR 36725; 62331 (June 21, 2010), 75 FR 36746; 62332 (June 21, 2010), 75 FR 36749; 62333 (June 21, 2010), 75 FR 36759; 62334 (June 21, 2010), 75 FR 36732; 62335 (June 21, 2010), 75 FR 37494; 62336 (June 21, 2010), 75 FR 36743; 62337 (June 21, 2010), 75 FR 36739; 62338 (June 21, 2010), 75 FR...

  6. 76 FR 69141 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-08

    ...: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569); December 12, 2007 (72 FR 70479); September 18, 2008...

  7. 78 FR 6107 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-29

    ... Appraisal Complaint Form. Agency form number: FR 1379a, FR 1379b, FR 1379c, and FR 1379d. OMB control number..., and financial institutions. Estimated annual reporting hours: FR 1379a: 116 hours; FR 1379b: 167 hours; FR 1379c: 1,351 hours; FR 1379d: 100 hours. Estimated average hours per response: FR 1379a: 5...

  8. 77 FR 59487 - Endangered and Threatened Wildlife and Plants; Endangered Status for Grotto Sculpin and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-27

    ... notice of review published in the Federal Register on June 13, 2002 (67 FR 40657). Candidate species are..., notices of review published in the Federal Register (69 FR 24876, 70 FR 24870, 71 FR 53756, 72 FR 69034, 73 FR 75176, 74 FR 57804, 75 FR 69222, 76 FR 66370) continued to maintain an LPN of 2 for the...

  9. 78 FR 58938 - Endangered and Threatened Wildlife and Plants; Determination of Endangered Species Status for the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-25

    ... the Federal Register on June 13, 2002 (67 FR 40657). Candidate species are assigned listing priority... published in the Federal Register (69 FR 24876, 70 FR 24870, 71 FR 53756, 72 FR 69034, 73 FR 75176, 74 FR 57804, 75 FR 69222, 76 FR 66370) continued to maintain an LPN of 2 for the species. On September...

  10. 78 FR 51277 - Endangered and Threatened Wildlife and Plants; Determination of Endangered Species Status for the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-20

    ... included in nine Candidate Notices of Review (67 FR 40657, June 13, 2002; 69 FR 24876, May 4, 2004; 70 FR 24870, May 11, 2005; 71 FR 53756, September 12, 2006; 72 FR 69034, December 6, 2007; 73 FR 75176, December 10, 2008; 74 FR 57804, November 9, 2009; 75 FR 69222, November 10, 2010; 76 FR 66370, October...

  11. 77 FR 5717 - National Organic Program; Proposed Amendment to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-06

    ... amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569); December 12, 2007 (72 FR...

  12. 75 FR 68505 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ... times, October 31, 2003 (68 FR 61987), November 3, 2003 (68 FR 62215), October 21, 2005 (70 FR 61217), June 7, 2006 (71 FR 32803), September 11, 2006 (71 FR 53299), June, 27, 2007 (72 FR 35137), October 16, 2007 (72 FR 58469), December 10, 2007 (72 FR 69569), December 12, 2007 (72 FR 70479), September...

  13. 77 FR 22200 - Rescission of Rules

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-13

    ..., 75 FR 57252, 57253 (Sept. 20, 2010); see also Dodd-Frank Act, Sec. 1062. As a result, the Commission..., the FTC is rescinding its version of these rules effective immediately. \\7\\ See 76 FR 78121 (Dec. 16, 2011); 76 FR 78126 (Dec. 16, 2011); 76 FR 78130 (Dec. 16, 2011); 76 FR 79308 (Dec. 21, 2011). The...

  14. 78 FR 44247 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ... transformers. Completed: Reason Date FR Cite Final Action 04/18/13 78 FR 23335 Final Action Effective 06/17/13... feasible and economically justified. Timetable: Action Date FR Cite Notice: Public Meeting, Framework 01/06/09 74 FR 411 Document Availability. Notice: Public Meeting, Data 04/05/10 75 FR 17080...

  15. 78 FR 18285 - Direct Final Rulemaking Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-26

    ... Transportation's (DOT) complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR... would be useful to its rulemaking activities. \\1\\ 69 FR 4455. \\2\\ See 70 FR 67318 (FTA), 72 FR 10086 (FRA), and 75 FR 29915 (FMCSA). Notice and comment rulemaking procedures are not required under...

  16. 78 FR 53640 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-30

    ... a case where two adjacent frame (FR) forks of a forward cargo door were found cracked. FR20B was... frame fork end of frame (FR)60 and FR60A of the aft cargo door for sheared, loose, or missing rivets... Register on May 20, 2013 (78 FR 29261). The NPRM proposed to correct an unsafe condition for the...

  17. 77 FR 60064 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-02

    ... 5, 2010; corrected December 17, 2010 (75 FR 78883))): Perform a vacuum loss inspection on the rudder...-16496 (75 FR 68181, November 5, 2010; corrected December 17, 2010 (75 FR 78883)). That AD required..., Amendment 39-16496 (75 FR 68181, November 5, 2010; corrected December 17, 2010 (75 FR 78883)). This...

  18. 78 FR 2200 - Energy Labeling Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-10

    ...://www.ftc.gov/appliances . \\3\\ 44 FR 66466 (Nov. 19, 1979). \\4\\ See 52 FR 46888 (Dec. 10, 1987) (central air conditioners and heat pumps); 54 FR 28031 (Jul. 5, 1989) (fluorescent lamp ballasts); 58 FR 54955 (Oct. 25, 1993) (certain plumbing products); 59 FR 25176 (May 13, 1994) (lighting products); 59...

  19. 77 FR 32444 - Minimum Internal Control Standards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-01

    ... Minimum Internal Control Standards. 64 FR 590. The rule added a new part to the Commission's regulations..., 2002 (67 FR 43390), August 12, 2005 (70 FR 47108), and October 10, 2008 (73 FR 60498). In addition to... regulations, and the process NIGC should utilize to make revisions. 75 FR 70680 (Nov. 18, 2010). On April...

  20. 75 FR 79925 - Semiannual Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... FR Cite Board Issued Final Rule on 02/22/10 75 FR 7658 Regulatory Flexibility Analysis Required: Yes... FR 37526 Regulatory Flexibility Analysis Required: Yes Agency Contact: Amy Henderson, Senior Attorney... similar to the proposed rule. Timetable: Action Date FR Cite Board Requested Comment 08/26/09 74 FR...

  1. 77 FR 5781 - Energy Employees Occupational Illness Compensation Program Act of 2000; Revision to the List of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-06

    ... Register (FR) 102); June 30, 2010 (75 FR 125), as amended August 3, 2010 (75 FR 148); April 9, 2009 (74 FR 67); June 28, 2007 (72 FR 124); November 30, 2005 (70 FR 229); August 23, 2004 (69 FR 162); July 21, 2003 (68 FR 139); December 27, 2002 (67 FR 249); June 11, 2001 (66 FR 112); and January 17, 2001 (66...

  2. 78 FR 48138 - Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-07

    .... 78 FR 9359 (Feb. 8, 2013). The TDO previously had been renewed on September 17, 2008, March 16, 2009..., 2011. 77 FR 64,427 (October 18, 2011). The February 4, 2013 Order laid out further evidence of... Airways-Istanbul Office, Cumhuriye Cad. Sibil Apt No: 101 D:6, 34374 Emadad, Sisli Istanbul, Turkey....

  3. 75 FR 21815

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ...: Action Date FR Cite Final Action 04/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact... idle facilities. Timetable: Action Date FR Cite NPRM 12/00/10 NPRM Comment Period End 02/00/11...-AX19 Exemptions for Certain Antelope Species Minerals Management Service--Proposed Rule...

  4. 76 FR 69601 - Suitability

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-09

    ... at 74 FR 56747, a proposed rule to guide agencies in carrying out the new requirement to... FR 68222 reopening the comment period on the proposed rule. This notice provided additional... questioned whether or not there is redundancy between the reinvestigation and the FD-961...

  5. 78 FR 4784 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-23

    ... for fees submitted 1-90 days late; and to establish a fingerprinting fee payment process. 77 FR 5178... (Appeal Proceedings Before the Commission), thereby removing former parts 524, 539, and 577. 77 FR 58941... National Indian Gaming Commission 25 CFR Part 514 Fees AGENCY: National Indian Gaming Commission,...

  6. 75 FR 21889

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... energy saving small businesses, and an energy saving debenture program. ] Timetable: Action Date FR Cite... time limitations for veteran-owned small businesses. Timetable: Action Date FR Cite NPRM 08/00/10... Act of 2004 (Reauthorization Act) to regulate Small Business Lending Companies (SBLCs) and...

  7. 77 FR 40271 - Pasteuria

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-09

    ... Environmental Health Risks and Safety Risks'' (62 FR 19885, April 23, 1997). This final rule does not contain... products containing a new active ingredient, Pasteuria reniformis--Pr3 (now recognized as Pasteuria spp... February 4, 2011 (76 FR 6465) (FRL-8858- 7), EPA issued a notice pursuant to FFDCA section 408(d)(3), 21...

  8. 75 FR 79052 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-17

    ... Affairs and Environmental Education for Public Affairs. Effective October 27, 2010. Securities and....gpoaccess.gov/fr/ gov/fr/. A consolidated listing of all authorities as of June 30 is also published...

  9. 77 FR 56273 - Conflict Minerals

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-12

    ..., Release No. 34-63547 (Dec. 15, 2010) [75 FR 80948] (the ``Proposing Release''). \\5\\ Public Law 111-203... (Jan. 7, 2011) (``WGC I''). \\33\\ Conflict Minerals, Release No. 34-63793 (Jan. 28, 2011) [76 FR...

  10. 77 FR 54368 - Service Dogs

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-05

    ... published in the Federal Register (76 FR 35162) a proposed rule to amend VA regulations to broaden and... quality of care that the VA-system can provide. 76 FR 35163. One commenter additionally noted that...

  11. 75 FR 64642 - Indexed Annuities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-20

    ...), published at 74 FR 3175 (January 16, 2009) and effective on January 12, 2011, is withdrawn as of October 20... Commission hereby withdraws rule 151A, which was published at 74 FR 3175 (Jan. 16, 2009). \\1\\ 15 U.S.C. 77a.... 9089 (Dec. 16, 2009) [74 FR 68334 (Dec. 23, 2009)]. That rulemaking assigned an incremental...

  12. 75 FR 81651 - United States

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... States v. Adobe Systems, Inc., No. 1:10- cv-01629, 75 FR 60820, 60828-30 (D.D.C. filed Sept. 24, 2010... firm's employees. United States v. Adobe Systems, Inc., No. 1:10-cv-01629, Complaint, 75 FR 60822 (D.D.C. filed Sept. 24, 2010); Competitive Impact ] Statement, 75 FR 60823 (D.D.C. filed Sept. 24,...

  13. 76 FR 35511 - Decommissioning Planning

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-17

    ... regulations in 1997 as Subpart E of 10 CFR part 20 (62 FR 39058; July 21, 1997). This set of requirements is... the January 27, 1988 (53 FR 24018), rule on planning for decommissioning require licensees to provide... contamination and the amount of funds set aside and expended on cleanup. (62 FR 39082; July 21, 1997)....

  14. 75 FR 63379 - Technical Amendment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-15

    ... Employment Standards Administration. Secretary's Order 13-71, 36 FR 8755 (May 12, 1971). The Assistant...-2009, 74 FR 58834 (Nov. 13, 2009). The Secretary then delegated her authority to administer the LHWCA... Order 12866 (58 FR 51735 (Oct. 4, 1993)). ] Executive Order 13132 (Federalism) The Department...

  15. 76 FR 36356 - C9

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-22

    ...-5805. II. Petition for Exemption In the Federal Register of January 25, 2006 (71 FR 4135) (FRL-7750- 4) for C 9 rich aromatic hydrocarbons, January 23, 2006 (71 FR 3512) (FRL-7750-3) for C 10-11 rich aromatic hydrocarbons, and February 1, 2006 (71 FR 5321) (FRL-7750-5) for C 11-12 rich...

  16. 77 FR 32465 - Technical Standards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-01

    ... Electronic, Computer, or Other Technologic Aids Used in the Play of Class II Games. 73 FR 60508. The rule..., and the process NIGC should utilize to make revisions. 75 FR 70680. On April 4, 2011, after consulting...) setting out a consultation schedule and process for review. 76 FR 18457. Part 547 was included in...

  17. 78 FR 53285 - Seagoing Barges

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-29

    .... Abbreviations CFR Code of Federal Regulations DFR Direct final rule E.O. Executive Order FR Federal Register... rule (DFR) entitled ``Seagoing Barges'' (76 FR 77712). Following the receipt of an adverse comment on... (77 FR 20727). On January 9, 2013, we published a notice of proposed rulemaking (NPRM)...

  18. 77 FR 30053 - Repair Stations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-21

    ... Register published on April 11, 2000 (65 FR 19477-19478), as well as at http://DocketsInfo.dot.gov . Docket... difficult to administer. \\1\\ 64 FR 33142; June 21, 1999. In August 2001, the FAA published a final rule with... on the FAA's proposed changes to these areas. \\2\\ 66 FR 41088; August 6, 2001. On October 19,...

  19. 77 FR 44439 - Research Misconduct

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-30

    ..., published July 25, 2003 (68 FR 43982), was created to establish a new research misconduct policy for NASA... http://www.gpo.gov/fdsys/pkg/FR-2003-07-25/pdf/03-18982.pdf . The proposed rule was changed to address public comments, and the final rule was published on July 14, 2004 (69 FR 42102). Details on how...

  20. 75 FR 68203 - Debt Collection

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-05

    ... by PBGC from another agency (for example, when a PBGC employee owes a student loan debt to the United... FCCS. 65 FR 70390 (Nov. 20, 2000). On July 22, 2010 (at 75 FR 42662), PBGC published a proposed rule to... individuals, PBGC-13, Debt Collection. See 75 FR 37842 (June 30, 2010). Subpart A--4903.1 to 4903.4 Subpart...

  1. 78 FR 22546 - Hearing Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-16

    ... Availability, 77 FR 31,855 (May 30, 2012). \\3\\ Comments were received from American Financial Services... Regulation of Certain Nonbank Financial Companies, 77 FR 21,637, 21,662 (April 11, 2012) (``Before a vote of...\\ Authority to Require Supervision and Regulation of Certain Nonbank Financial Companies, 77 FR 21,637...

  2. 75 FR 81405 - Portfolio Holdings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... adopts FHFA's interim final rule on portfolio holdings, without change. See 74 FR 5609, January 30, 2009...: Effective December 28, 2010, the interim final rule published on January 30, 2009 (74 FR 5609), which was... final regulation which added new subchapter C of part 1252 to 12 CFR Chapter XII. See 74 FR 5609....

  3. 76 FR 44761 - Remittance Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-27

    ... membership and issued Sec. 701.30 to implement Section 503. 71 FR 62875 (Oct. 27, 2006) (interim final rule); 72 FR 7927 (Feb. 22, 2007) (final rule). Section 1073 of the Dodd-Frank Act added a new Section 919... of the services offered by remittance transfer providers. 99 FR 29902 (May 23, 2011). FCUs have...

  4. 78 FR 44279 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ... agenda pursuant to Executive Order 12866, ``Regulatory Planning and Review,'' 58 FR 51735, and the... destruction of controlled substances consistent with the Controlled Substances Act. Timetable: Action Date FR Cite ANPRM 01/21/09 74 FR 3480 ANPRM Comment Period End 03/23/09 Notice of Public Meeting 12/22/10...

  5. 76 FR 16297 - Aspergillus flavus

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-23

    ... Findings In the Federal Register of March 3, 2010 (75 FR 9596) (FRL-8811-2), EPA issued a notice pursuant..., 2003 (68 FR 41541) (FRL-7311-6). Those health effects data were the basis for establishing the... exemptions for experimental use of Aspergillus flavus AF36 on pistachio (72 FR 28871, May 23, 2007)...

  6. 76 FR 35351 - Capital Plans

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-17

    ... FR 44620 (July 31, 2008). \\6\\ See generally section 165 of Public Law 111-203, 124 Stat. 1376 (2010... consolidated financial statement for bank holding companies (FR Y-9C). Consistent with the phase-in period for... captured in the FR Y-9C: Schedule HC, line item 23 net of Schedule HC-R, line item 5; Schedule HC-R,...

  7. 78 FR 40430 - De Facto

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-05

    ... Involving Non-Market Economy Countries, 75 FR 78676 (December 16, 2010). \\3\\ The Department currently... China, 56 FR 20588 (May 6, 1991) (``Sparklers''), as further developed in Final Determination of Sales at Less Than Fair Value: Silicon ] Carbide from the People's Republic of China, 59 FR 22585 (May...

  8. 75 FR 59666 - Agricultural Swaps

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-28

    ... one of the assets or cash flows is related to the price of one or more commodities.'' (See 72 FR 66099... traded on or through a multilateral transaction execution facility.\\16\\ \\15\\ See 58 FR 5587 (Jan. 22... Segregated Accounts, 73 FR 77015 (Dec. 18, 2008); Order (1) Pursuant to Section 4(c) of the...

  9. 77 FR 16175 - Station Blackout

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-20

    ... petition for rulemaking (PRM), PRM-50-101 (76 FR 58165) as a way to address SBO mitigation. The approach... Design Criteria for Nuclear Power Plant Construction Permits'' (32 FR 10213). Subsequently, on February... Design Criteria for Nuclear Power Plants,'' to 10 CFR part 50 (36 FR 3255). The GDC provide...

  10. 77 FR 8018 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... revised Standards for Accessible Design (commonly referred to as ``2010 Standards''). See 75 FR 56164 and 56236. On March 11, 2011, DOJ published certain corrections to the revised regulations. See 75 FR 13385... recipient on or after March 15, 2012, shall comply with the 2010 Standards. Timetable: Action Date FR...

  11. 77 FR 47517 - Enforcement Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-09

    ...)(10); 25 U.S.C. 2713; E.O. 13175, 65 FR 67249, 3 CFR, 2000 Comp., p. 304. 0 2. Revise the part 573... and requesting public comment. 75 FR 70680 (Nov. 18, 2010). After consulting with tribes, NIGC... review. 76 FR 18457 (Oct. 12, 2011). The Commission's regulatory review process established a...

  12. 75 FR 79978 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-21

    ... Statement in the Federal Register published on April 11, 2000 (65 FR 19477, 19477-78). FOR FURTHER... penalties under the Adjustment Act was published on February 4, 1997. 62 FR 5167. At that time, we codified.... Since that time, we have adjusted available penalties on a number of occasions. See 75 FR 49879,...

  13. 77 FR 70710 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-27

    ...,000. 75 FR 5246. Also on February 10, 2010, NHTSA last adjusted the maximum civil penalty for a... civil penalty policy when determining the appropriate civil penalty amount. See 62 FR 37115 (July 10... Act was published on February 4, 1997. 62 FR 5167. At that time, we codified the penalties...

  14. 77 FR 55175 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-07

    ... $6,000. 71 FR 28279. At the same time, the agency adjusted the maximum civil penalty for a single... to $16,650,000. 75 FR 5246. Also on February 10, 2010, NHTSA last adjusted the maximum civil penalty... policy when determining the appropriate civil penalty amount. See 62 FR 37115 (July 10, 1997)...

  15. 75 FR 5244 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-02

    ...) entitled ``Civil Penalties'' which proposed the adjustment of certain civil penalties for inflation. 74 FR.... See 62 FR 37115 (July 10, 1997) (NHTSA's civil penalty policy under the Small Business Regulatory... April 11, 2000 (65 FR 19477, 19477-78). FOR FURTHER INFORMATION CONTACT: Jessica Lang, Office of...

  16. 75 FR 49879 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-16

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19477-78). Docket... Act was published on February 4, 1997. 62 FR ] 5167. At that time, we codified the penalties under... further adjusted certain penalties. 64 FR 37876. In 2000, the Transportation Recall...

  17. 76 FR 61565 - Preemption Review

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-05

    ... January 24, 2006 (71 FR 3922), FDA published a final rule entitled ``Requirements on Content and Format of... National Stockpile'' (72 FR 73589, 73595, December 28, 2007); ``Supplemental Applications Proposing Labeling Changes for Approved Drugs, Biologics, and Medical Devices'' (73 FR 49603, 49605-49606, August...

  18. 75 FR 17297 - Account Class

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-06

    ...) in Appendix A to Regulation Part 190 (Bankruptcy Forms). \\4\\ 74 FR 40794 (August 13, 2009). \\5\\ The... Notice, the rules or bylaws of a DCO constitute one such source. \\7\\ 74 FR at 40796. The public comment... Commission Merchant * * * to a Derivatives Clearing Organization.'' 73 FR 65514 (November 4, 2008). \\14\\...

  19. 78 FR 9317 - Glycine max

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-08

    ... Findings In the Federal Register of November 7, 2012 (77 FR 66781) (FRL- 9367-5), EPA issued a document... Executive Order 12866, entitled ``Regulatory Planning and Review'' (58 FR 51735, October 4, 1993). Because... Energy Supply, Distribution, or Use'' (66 FR 28355, May 22, 2001) or Executive Order 13045,...

  20. 78 FR 42764 - Cumberland System

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-17

    ... August 5, 1993 (58 FR 41762). The marketing policy for the Cumberland System of Projects provides peaking... policy for the Cumberland System was published in the Federal Register August 5, 1993 (58 FR 41762). The... August 5, 1993 (58 FR 41762). The marketing policy for the Cumberland System of Projects provides...

  1. 76 FR 49291 - Agricultural Swaps

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-10

    ... Commission recently promulgated a final rule defining the term ``agricultural commodity.'' See 76 FR 41048... Agricultural Swaps, 76 FR 6095, February 3, 2011. \\8\\ See Agricultural Swaps, 75 FR 59666, Sept. 28, 2010. C... specifically addressing the costs and benefits of the proposed agricultural swaps rules. \\10\\ See NPRM, 76...

  2. 76 FR 74631 - Capital Plans

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-01

    ... assets. \\1\\ 76 FR 35351 (June 17, 2011). \\2\\ The amendments to Regulation Y are codified at 12 CFR 225.8... (Pillar 2) Related to the Implementation of the Basel II Advanced Capital Framework, 73 FR 44620 (July 31... Owners' Loan Act. See 76 FR 22662, 22665 (April 22, 2011). The Board may extend the capital plan...

  3. 75 FR 79759 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... Action 04/16/10 75 FR 2012 Regulatory Flexibility Analysis Required: Yes Agency Contact: Mohammed Khan... ``Regulatory Planning and Review,'' 58 FR 51735, and the Regulatory Flexibility Act, 5 U.S.C. 601 et seq... use throughout the rulemaking process. Timetable: Action Date FR Cite Notice: Public Meeting...

  4. 76 FR 72623 - Literacy Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-25

    ... interim rule on September 26, 1997 (62 FR 50791). The Bureau amended its regulations on the literacy... Program regulations, published as an interim rule on September 26, 1997 (62 FR 50791). In the interim rule... Part 540 Prisoners. 0 Accordingly, the interim rule published on September 26, 1997 (62 FR 50791)...

  5. 78 FR 41703 - Regulation of Fuels and Fuel Additives: Additional Qualifying Renewable Fuel Pathways Under the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-11

    ... renewable fuels they produce through approved fuel pathways. See 75 FR 14670 (March 26, 2010); 75 FR 26026 (May 10, 2010); 75 FR 37733 (June 30, 2010); 75 FR 59622 (September 28, 2010); 75 FR 76790 (December 9, 2010); 75 FR 79964 (December 21, 2010); 77 FR 1320 (January 9, 2012); 77 FR 74592 (December 17,...

  6. 75 FR 18764 - Migratory Bird Subsistence Harvest in Alaska; Harvest Regulations for Migratory Birds in Alaska...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-13

    ... Federal Register citation August 16, 2002 67 FR 53511. July 21, 2003 68 FR 43010. April 2, 2004 69 FR 17318. April 8, 2005 70 FR 18244. February 28, 2006 71 FR 10404. April 11, 2007 72 FR 18318. March 14, 2008 73 FR 13788. May 19, 2009 74 FR 23336. These documents, which are all final rules setting...

  7. 77 FR 28472 - National Organic Program; Amendments to the National List of Allowed and Prohibited Substances...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-15

    ... published multiple amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569);...

  8. 77 FR 66609 - Twenty-Fifth Update of the Federal Agency Hazardous Waste Compliance Docket

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-06

    ... (53 FR 4280). Since then, updates to the Docket have been published on November 16, 1988 (54 FR 46364); December 15, 1989 (54 FR 51472); August 22, 1990 (55 FR 34492); September 27, 1991 (56 FR 49328); December 12, 1991 (56 FR 64898); July 17, 1992 (57 FR 31758); February 5, 1993 (58 FR 7298); November 10,...

  9. 77 FR 47924 - Determinations Concerning Illnesses Discussed in National Academy of Sciences Report: Veterans...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ... several diseases discussed in those reports. Those notices are published at: 59 FR 341 (Jan. 4, 1994), 61 FR 41442 (Aug. 8, 1996), 64 FR 59232 (Nov. 2, 1999), 67 FR 42600 (Jun. 4, 2002), 68 FR 27630 (May 30, 2003), 72 FR 32395 (May 20, 2007), 75 FR 32540 (Jun. 8, 2010), and 75 FR 81332 (Dec. 27, 2010)....

  10. 76 FR 17353 - Migratory Bird Subsistence Harvest in Alaska; Harvest Regulations for Migratory Birds in Alaska...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-29

    ... following Federal Register documents: Date Federal Register citation August 16, 2002 67 FR 53511 July 21, 2003 68 FR 43010 April 2, 2004 69 FR 17318 April 8, 2005 70 FR 18244 February 28, 2006 71 FR 10404 April 11, 2007 72 FR 18318 March 14, 2008 73 FR 13788 May 19, 2009 74 FR 23336 April 13, 2010 75...

  11. 76 FR 19077 - Energy Conservation Program for Consumer Products: Decision and Order Granting a Waiver to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-06

    ... Register on December 10, 2010. 75 FR 76962. In its petition, Electrolux sought a waiver from the existing..., 2008 (73 ] FR 10425); May 5, 2009 (74 FR 20695); December 15, 2009 (74 FR 66338), March 11, 2010 (75 FR 11530), April 29, 2010 (75 FR 22584); August 19, 2010 (75 FR 51264); March 18, 2010 (75 FR...

  12. 76 FR 48722 - Endangered and Threatened Wildlife and Plants; Endangered Status for the Cumberland Darter, Rush...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-09

    ... Year page number Register 1985 50 FR 37958 September 18, 1985. 1989 54 FR 554 January 6, 1989. 1991 56 FR 58804 November 21, 1991. 1994 59 FR 58982 November 15, 1994. 1996 61 FR 7596 February 28, 1996. 1999 64 FR 57533 October 25, 1999. 2001 66 FR 54807 October 30, 2001. 2002 67 FR 40657 June 13,...

  13. 75 FR 36393 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-25

    ..., 2010. ADDRESSES: You may submit comments, identified by FR 1373, FR 2070, FR 2081, or FR 4025, by any... revision, of the following reports: 1. Report title: Surveys of Board Publications. Agency form number: FR 1373a, b. OMB control number: 7100-0301. Frequency: FR 1373a, survey: One or two times per...

  14. 78 FR 14410 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-05

    ... for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 68719; 68 FR...) published in the Federal Register on December 29, 2010 (75 FR 82132), or you may visit http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf . FOR FURTHER INFORMATION CONTACT: Elaine M. Papp,...

  15. 75 FR 49313 - Rules of Practice and Procedure

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-12

    ... the Comptroller of the Currency (OCC), 12 CFR part 19 (56 FR 38028, August 9, 1991) (as amended 61 FR 20334, May 6, 1996; 70 FR 69638, November 17, 2005); the Office of Thrift Supervision (OTS), 12 CFR Part 509 (56 FR 38306, August 12, 1991) (as amended 56 FR 59866, November 26, 1991; 61 FR 20353, May...

  16. 78 FR 30661 - Electronic Fund Transfers (Regulation E)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-22

    ... effective October 28, 2013. The effective date of the rules published February 7, 2012 (77 FR 6194), July 10, 2012 (77 FR 40459), and August 20, 2012 (77 FR 50244), which were delayed on January 29, 2013 (78 FR... 7, 2012 (77 FR 6194) (February Final Rule) \\1\\ and August 20, 2012 (77 FR 50244) (August Final...

  17. 76 FR 288 - National Organic Program (NOP); Sunset Review (2011)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-04

    ... published an Advanced Notice of Proposed Rulemaking (ANPR) (73 FR 13795) in the Federal Register on March 14... (74 FR 11904), September 9, 2009 (74 FR 46411), and March 17, 2010 (75 FR 12723). The NOSB received... List has been amended fourteen times, October 31, 2003 (68 FR 61987), November 3, 2003 (68 FR...

  18. 78 FR 60726 - Hazardous Materials Regulations: Penalty Guidelines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-02

    ... Appropriations Act of 1994 (See 60 FR 12139). RSPA and PHMSA published additional revisions of these guidelines on January 21, 1997 (62 FR 2970), September 8, 2003 (68 FR 52844), February 17, 2006 (71 FR 8485), December 29, 2009 (74 FR 68701), and September 1, 2010 (75 FR 53593). These guidelines provide...

  19. 75 FR 54889 - Development of Set 24 Toxicological Profiles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-09

    ... announced in the Federal Register on March 6, 2008 (73 FR 12178). For prior versions of the list of substances, see Federal Register notices dated April 17, 1987 (52 FR 12866); October 20, 1988 (53 FR 41280); October 26, 1989 (54 FR 43619); October 17, 1990 (55 FR 42067); October 17, 1991 (56 FR 52166); October...

  20. 76 FR 34135 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-10

    .... Leonard, John W. Locke, Herman G. Lovell, Ronald L. Maynard, Donald G. Meyer, William A. Moore, Jr... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (63 FR 66226; 65 FR 20245; 65 FR 45817; 65 FR 57230; 65 FR 77066;...

  1. 78 FR 49365 - Electronic Fund Transfers (Regulation E); Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-14

    ... Federal Register on Wednesday, May 22, 2013. 78 FR 30662. The 2013 Final Rule modifies the final rules...\\ 77 FR 6194 (February 7, 2012), 77 FR 40459 (July 10, 2012), and 77 FR 50244 (August 20, 2012). The.... Corrections to FR Doc. 2013-10604 In FR Doc. 2013-10604 appearing on page 30661 in the Federal Register...

  2. 75 FR 79083 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-17

    ... Tyrone Earl M. Vaughan McKneely James L. Houser Dennis N. Bruce A. Walker McQuiston Richard G. Isenhart... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... exemption from the vision requirements (71 FR 63379; 73 FR 78422; 72 FR 1050; 71 FR 6826; 71 FR 19602; 73...

  3. 76 FR 18618 - Operating Limitations at Newark Liberty International Airport

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... the Government Printing Office's Web page at http://www.gpoaccess.gov/fr/index.html . You also may..., 2009.\\5\\ \\1\\ 73 FR 29550 (May 21, 2008), as amended by 74 FR 51648 (Oct. 7, 2009). \\2\\ 73 FR 29626 (May 21, 2008); Docket FAA-2008-0517. \\3\\ 73 FR 60574, amended by 73 FR 66516 (Nov. 10, 2008). \\4\\ 74...

  4. 75 FR 22424 - Avalotis Corp.; Grant of a Permanent Variance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-28

    ... FURTHER INFORMATION CONTACT: General information and press inquiries. For general information and press... proposed alternatives (see 38 FR 8545 (April 3, 1973), 44 FR 51352 (August 31, 1979), 50 FR 20145 (May 14, 1985), 50 FR 40627 (October 4, 1985), 52 FR 22552 (June 12, 1987), 68 FR 52961 (September 8, 2003),...

  5. 78 FR 11731 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-19

    ... acknowledgement page that appears after submitting comments on-line. Privacy Act: Anyone may search the electronic... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (71 FR 63379; 72 FR 1050; 72 FR 180; 72 FR 9397; 73 FR 75803; 74...

  6. 78 FR 65583 - Capital Planning and Stress Testing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-01

    ... stress tests.\\3\\ \\1\\ 76 FR 74631 (Dec. 1, 2011). \\2\\ Id. \\3\\ See 77 FR 61238 (Oct. 9, 2012); 77 FR 62378 (Oct. 12, 2012); 77 FR 62396 (Oct. 12, 2012); 77 FR 62417 (Oct. 15, 2012). II. Proposed Rule A. Credit..., prepares them to do this. \\5\\ See 78 FR 62018 (Oct. 11, 2013). The net worth ratio contains components...

  7. 78 FR 62352 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-18

    ... by FR 3064a and FR 3064b, by any of the following methods: Agency Web site: http://www.federalreserve... public Web site at: http://www.federalreserve.gov/apps/reportforms/review.aspx . Agency form numbers: FR 3064a and FR 3064b. OMB control number: 7100-0344. Frequency: FR 3064a--Biennial; FR...

  8. 77 FR 70537 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-26

    ... on the merits of each case and made only after careful consideration of the comments received to its... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... exemption from the vision requirements (73 FR 35194; 73 FR 38497; 73 FR 48271; 73 FR 48273; 73 FR 61922;...

  9. 77 FR 17115 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... case and made only after careful consideration of the comments received to its notices of applications... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 10471; 67 FR 17102; 67 FR 19798;...

  10. 77 FR 17108 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... these individuals was made on the merits of each case and made only after careful consideration of the..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR FURTHER... exemption from the vision requirements (72 FR 39879; 72 FR 52419; 75 FR 8184; 75 FR 9480; 75 FR 22176)....

  11. 78 FR 59219 - Stress Testing of Regulated Entities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-26

    ... on December 4, 2012, after one 30 day extension.\\1\\ \\1\\ 77 FR 60948 (Oct. 5, 2012) and 77 FR 66566... the OCC, it is consistent and comparable with them. \\2\\ 77 FR 62396 (Oct. 12, 2012). \\3\\ Id. \\4\\ 77 FR 62378 (Oct. 12, 2012). \\5\\ 77 FR 62417 (Oct. 15, 2012). \\6\\ 77 FR 61238 (Oct. 9, 2012). ] V....

  12. 77 FR 50102 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-20

    ... FR 2004 or FR Y-15, by any of the following methods: Agency Web Site: http://www.federalreserve.gov... Dealer Positions (FR 2004A), Weekly Report of Cumulative Dealer Transactions (FR 2004B), Weekly Report of Dealer Financing and Fails (FR 2004C), Weekly Report of Specific Issues (FR 2004SI), Daily Report...

  13. 78 FR 17432 - Kiewit Power Constructors Co. et al.; Application for a Permanent Variance and Request for Comments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-21

    ... past seven years. \\4\\ See 38 FR 8545 (April 3, 1973), 44 FR 51352 (August 31, 1979), 50 FR 20145 (May 14, 1985), 50 FR 40627 (October 4, 1985), 52 FR 22552 (June 12, 1987), 68 FR 52961 (September 8, 2003), 70 FR 72659 (December 6, 2005), 71 FR 10557 (March 1, 2006), 72 FR 6002 (February 8, 2007), 74...

  14. 78 FR 23105 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-18

    ... in the Federal Register on August 27, 2012 (77 FR 51729). That NPRM proposed to correct an unsafe... NPRM (77 FR 51729, August 27, 2012), or on the determination of the cost to the public. Explanation of Changes Made Since NPRM (77 FR 51729, August 27, 2012) Was Issued Since the NPRM (77 FR 51729, August...

  15. 75 FR 33681 - Electronic Fund Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-15

    ... document in the Federal Register of June 4, 2010 (75 FR 31665). The document (FR Doc. 2010-13280) amended... number 2. In the final rule, FR Doc. 2010-13280, published on June 4, 2010 (75 FR 31665) make the... CFR Part 205 Electronic Fund Transfers June 4, 2010. AGENCY: Board of Governors of the Federal...

  16. 75 FR 31665 - Electronic Fund Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-04

    ... 2009 and has a mandatory compliance date of July 1, 2010. See 74 FR 59033 (November 17, 2009... E and the official staff commentary. See 75 FR 9120 (March 1, 2010). The Board received... institution's overdraft practices and to make an informed choice. 74 FR 59045; 75 FR 9121....

  17. 78 FR 78705 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-27

    ... publications listed in this AD as of January 11, 2011 (75 FR 75878, December 7, 2010). ADDRESSES: You may... 14, 2013 (78 FR 28152), and proposed to supersede AD 2010-24-07, Amendment 39-16526 (75 FR 75878..., Amendment 39-16526 (75 FR 75878, December 7, 2010)], and prompted by in-service experience, the...

  18. 77 FR 7968 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... federally owned or controlled lands and/or waters. Timetable: Action Date FR Cite NPRM 07/00/12 Regulatory..., yellow anaconda, DeSchauensee's anaconda, green anaconda, and Beni anaconda. Timetable: Action Date FR Cite ANPRM 01/31/08 73 FR 5784 ANPRM Comment Period End 04/30/08 NPRM 03/12/10 75 FR 11808 NPRM...

  19. 76 FR 40082 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    .... Timetable: Action Date FR Cite NPRM 12/00/11 Regulatory Flexibility Analysis Required: Yes. Agency Contact..., green anaconda, and Beni anaconda. Timetable: Action Date FR Cite ANPRM 01/31/08 73 FR 5784 ANPRM Comment Period End 04/30/08 NPRM 03/12/10 75 FR 11808 NPRM Comment Period End 05/11/10 NPRM Comment...

  20. 75 FR 51444 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-20

    ... . SUPPLEMENTARY INFORMATION: Additions On 6/4/2010 (75 FR 31768-31769); 6/11/2010 (75 FR 33270-33271); 6/ 18/2010 (75 FR 34701-34702); and 6/25/2010 (75 FR 36363-36371), the Committee for Purchase From People Who Are... factors considered for this certification were: 1. The action will not result in any additional...

  1. 78 FR 29261 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-20

    ... states: One A330 operator recently reported a case where two adjacent frame (FR) forks of a forward cargo... frame fork end of frame (FR)60 and FR60A of the aft cargo door for sheared, loose, or missing rivets...-12, Amendment 39-17092 (77 FR 37797, June 25, 2012)] and ALI Task 523106-01-1. However, during...

  2. 76 FR 53417 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-26

    ... . SUPPLEMENTARY INFORMATION: Additions On 6/17/2011 (76 FR 35415-35417); 6/24/2011 (76 FR 37069-37070); 7/ 1/2011 (76 FR 38641-38642); and 7/8/2011 (76 FR 40342-40343), the Committee for Purchase From People Who Are... the Blind, Little Rock, AR. Contracting Activity: General Services Administration, New York, NY....

  3. 78 FR 42693 - Hexythiazox; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-17

    .... Summary of Petitioned-For Tolerance In the Federal Register of September 28, 2012 (77 FR 59578) (FRL- 9364-6), January 16, 2013 (78 FR 3377) (FRL-9375-4), and August 22, 2012 (77 FR 50661) (FRL-9358-9), EPA... Federal Register of February 8, 2013 (78 FR 9322) (FRL-9376-9). C. Exposure Assessment 1. Dietary...

  4. 78 FR 37437 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-21

    ...); corrected (75 FR 78883, December 17, 2010))): Perform a vacuum loss inspection on the rudder reinforced area... 68181, November 5, 2010); corrected (75 FR 78883, December 17, 2010))): Perform a vacuum loss inspection... publications listed in this AD as of December 10, 2010 ((75 FR 68181, November 5, 2010); corrected (75 FR...

  5. 76 FR 7767 - Student Health Insurance Coverage

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-11

    ... protections) (75 FR 37188 (June 28, 2010)), and section 2713 (regarding preventive health services) (75 FR..., 2010, implemented rules for preventive health services (75 FR 41726). Concerns have been raised as to... health care professional (75 FR 37188). Concerns have been expressed by stakeholders...

  6. 78 FR 22222 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-15

    ... published at 75 FR 55515 and 77 FR 73394. The table provided here represents the flooding sources, location... buildings. Correction In the proposed rule published at 75 FR 55515 in the September 13, 2010, issue of the... were subsequently published at 77 FR ] 73394 in the December 10, 2012, issue of the Federal...

  7. 78 FR 68347 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-14

    ... listed in this AD as of February 9, 2011 (76 FR 4219, January 25, 2011). The Director of the Federal... March 5, 2009 (74 FR 7549, February 18, 2009). ADDRESSES: You may examine the AD docket on the Internet... April 16, 2013 (78 FR 22432), and proposed to supersede AD 2009-04-07, Amendment 39-15813 (74 FR...

  8. 78 FR 36296 - Buy America Waiver Notification

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-17

    ... many commenters in a November 21, 2011, Federal Register Notice (76 FR 72027) as being a car that is..., and Merced County, CA, for vehicle purchases on November 21, 2011 (76 FR 72027 and 76 FR 72028) and March 30, 2012 (77 FR 19410). In conclusion, and in light of the above, pursuant to 23 U.S.C....

  9. 75 FR 67912 - North Korea Sanctions Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-04

    ... Executive Order 13466 (73 FR 36787, June 27, 2008) (``E.O. 13466''). On August 30, 2010, the President... Act (22 U.S.C. 287c), issued Executive Order 13551 (75 FR 53837, September 1, 2010) (``E.O. 13551....O. 13466, 73 FR 36787, June 27, 2008, 3 CFR, 2008 Comp., p. 195; E.O. 13551, 75 FR 53837,...

  10. 78 FR 72537 - Credit Union Service Organizations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-03

    ... requirements to FISCUs as well. \\1\\ 73 FR 79312 (Dec. 29, 2008). \\2\\ Id. Since the promulgation of the 2008... already apply to FCUs under Sec. 712.3(d). \\3\\ 76 FR 44866 (July 27, 2011). The proposed rule also added... essentially become unsustainable. \\9\\ 73 FR 79312 (Dec. 29, 2008). \\10\\ 73 FR 23982, 23984 (May 1, 2008)....

  11. 76 FR 54991 - Corporate Credit Unions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-06

    ... rule at 12 CFR part 704. 75 FR 64786 (October 20, 2010). NCUA subsequently issued technical corrections to the final rule and further revisions to part 704. 76 FR 16235 (March 23, 2011); 76 FR 23861 (April... rule to revise part 704 in 2009. 74 FR 65210 (December 9, 2009). The 2009 proposal defined...

  12. 76 FR 34883 - Pesticide Tolerances; Technical Amendments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-15

    ... registrations'') to 40 CFR 180.1(l). 75 FR 76284 (December 8, 2010) (FRL-8853-8). No amendments were made to the... Orders 12866 (58 FR 51735, October 4, 1993) and Executive Order 13653 (76 FR 3821, January 21, 2011). Nor... specified in Executive Order 13175 (65 FR 67249, November 6, 2000). In addition, the agency has...

  13. 77 FR 45535 - Aldicarb; Proposed Tolerance Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-01

    ... treated domestic commodities. In the Federal Register of October 7, 2010 (75 FR 62129) (FRL-8848- 1), EPA... FR 27226) (FRL-9348-2) and May 25, 2012 (77 FR 31355) (FRL-9351-4), EPA issued a cancellation order...) from review under Executive Order 12866, entitled ``Regulatory Planning and Review'' (58 FR...

  14. 77 FR 76435 - Connect America Fund

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-28

    ... of Documents in Rulemaking Proceedings, 63 FR 24121, May 1, 1998. Electronic Filers: Comments may be... released the USF/ICC Transformation Order and FNPRM, 76 FR 73830, November 29, 2011 and 76 FR 78384.... Because the USF/ICC Transformation Order, 76 FR 73830, November 29, 2001, calls for making the...

  15. 75 FR 36362 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-25

    ... . SUPPLEMENTARY INFORMATION: Additions On 1/22/2010 (75 FR 3714); 3/19/2010 (75 FR 13263-13264); 4/9/2010 (75 FR 18164-18165); and 4/30/2010 (75 FR 22744-22745), the Committee for Purchase From People Who Are Blind or Severely Disabled published notices of proposed additions to the Procurement List. Glove, Mechanic's...

  16. 78 FR 46306 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-31

    ... mast between Frame (FR) 80 and FR83 for A340-500/-600, and installation of muffs on connecting bleed... Tank System Design Review, Flammability Reduction and Maintenance and Inspection Requirements'' (66 FR...,'' Amendment 21-78, and subsequent Amendments 21-82 and 21-83). Among other actions, SFAR 88 (66 FR 23086,...

  17. 75 FR 44093 - Truth in Lending

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... June 29, 2010, (75 FR 37526) ] (FR Doc. 2010-14717) amending Regulation Z, which implements the Truth...'s amendatory instructions. This document corrects that error. 0 In final rule, FR Doc. 2010-14717, published on June 29, 2010, (75 FR 37526) make the following corrections: PART 226--TRUTH IN...

  18. 76 FR 23502 - Fee-Generating Cases

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-27

    ... applies only to LSC and private non-LSC funds. 76 FR 6381. On April 15, 2011, the LSC Board of Directors... unless'' one of the regulatory exceptions applied. 41 FR 18528 (proposed rule May 5, 1976), 41 FR 38505 (final rule Sept. 10, 1976), and 49 FR 19656 (final rule May 9, 1984) (the last final rule prior to...

  19. 76 FR 6381 - Fee-Generating Cases

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-04

    ... unless'' one of the regulatory exceptions applied. 41 FR 18528 (proposed rule May 5, 1976), 41 FR 38505 (final rule Sept. 10, 1976), and 49 FR 19656 (final rule May 9, 1984) (the last final rule prior to 1996... regulation of any significant substantive change in scope. 61 FR 45765 (proposed rule August 29, 1996) and...

  20. 77 FR 46257 - Access Authorization Fees; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-03

    ... Federal Register on May 3, 2012 (77 FR 26149) and confirmed on June 22, 2012 (77 FR 37553). The direct... INFORMATION: The NRC published a direct final rule in the Federal Register on May 3, 2012 (77 FR 26149) and a confirmation of the effective date on June 22, 2012 (77 FR 37553). The direct final rule amended the...

  1. 78 FR 14738 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-07

    ... published at 75 FR 62061 and at 77 FR 55785. The table provided here represents the flooding sources... In the proposed rule published at 75 FR 62061, in the October 7, 2010, issue of the Federal Register... published at 77 FR 55785 in the September 11, 2012 issue of the Federal Register under the authority of...

  2. 76 FR 47564 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-05

    ... . SUPPLEMENTARY INFORMATION: Additions On 4/22/2011 (76 FR 22680); 5/6/2011 (76 FR 26279); 6/3/2011 (76 FR 32146); and 6/10/2011 (76 FR 34064-34065), the Committee for Purchase From People ] Who Are Blind or Severely...-0079--Notebook Computer Combination Lock. NSN: 5340-00-NIB-0099--Desktop & Peripherals Locking...

  3. 77 FR 66918 - Iranian Financial Sanctions Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-08

    ... FR 49836). On February 27, 2012, OFAC amended the IFSR and reissued them in their entirety, in order... designated Iranian financial institutions (77 FR 11724). Today, OFAC is further amending the IFSR to.... 12957, 60 FR 14615, 3 CFR, 1995 Comp., p. 332; E.O. 13553, 75 FR 60567, 3 CFR, 2010 Comp., p. 253;...

  4. 77 FR 66785 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-07

    ... combines all three notices to be used in lieu of the information published at 73 FR 4144, 75 FR 59192 and 76 FR 46705. The table provided here represents the flooding sources, location of referenced... rule published 76 FR 46705, in the August 3, 2011 issue of the Federal Register, FEMA published a...

  5. 77 FR 16484 - Annual Stress Test

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-21

    ...\\ \\1\\ See 77 FR 3408 (Jan. 24, 2012). \\2\\ Dodd-Frank Wall Street Reform and Consumer Protection Act... comment period would close on March 26, 2012.\\4\\ \\4\\ See 77 FR 3408 (Jan. 24, 2012). The OCC believes that... proposed rule from March 26, 2012 to April 30, 2012. \\5\\ See 77 FR 594 (Jan. 5, 2012). \\6\\ See 77 FR...

  6. 76 FR 23490 - Aluminum tris (O

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-27

    ... (75 FR 44184) (FRL-8834- 1), EPA issued a proposal to revise tolerance expressions for a number of... July 28, 2010 (75 FR 44184), which included proposals to revise the tolerance expressions for fenarimol..., 2010 (75 FR 56892) (FRL-8844-6), and March 9, 2011 (76 FR 12877) (FRL-8858-5),...

  7. 78 FR 19130 - Clothianidin; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-29

    ... December 8, 2011 (76 FR 76674) (FRL- 9328-8) and September 28, 2012 (77 FR 59578) (FRL-9364-6), EPA issued... FR 52246) (FRL-9360-4). C. Exposure Assessment 1. Dietary exposure from food and feed uses. In... ``Regulatory Planning and Review'' (58 FR 51735, October 4, 1993). Because this final rule has been...

  8. 77 FR 12731 - Thiamethoxam; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-02

    ...) 305-5805. II. Summary of Petitioned-For Tolerance In the Federal Register of August 26, 2011 (76 FR... the Federal Register of January 5, 2005 (70 FR 708) (FRL-7689-7), EPA had previously determined that... were reduced to 1X (June 23, 2010, 75 FR 35653; FRL-8830-4); (June 22, 2007, 72 FR 34401)....

  9. 78 FR 44355 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ...: Action Date FR Cite Staff Sent Briefing Package to 09/21/11 Commission. NPRM 11/08/11 76 FR 69586... in the Federal 12/05/12 77 FR 72205 Register. Regulatory Flexibility Analysis Required: Yes. Agency... unanimously on November 8, 2012, and the final rule was published December 10, 2012 (77 FR 73294)....

  10. 78 FR 67847 - Debt Collection (Regulation F)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-12

    ... application in the context of debt collection. Trade Regulation Rule: Credit Practices, 49 FR 7740 (Mar. 1..., 50 FR 16696 (Apr. 29, 1985) (Board); Consumer Protections; Unfair or Deceptive Credit Practices, 50 FR 19325 (May 8, 1985) (FHLBB); Federal Credit Union; Prohibited Lending Practices, 52 FR 35060...

  11. 78 FR 57927 - Credit Risk Retention

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-20

    ... proposal, as described in more detail below. \\5\\ Credit Risk Retention; Proposed Rule, 76 FR 24090 (April... legislation.''). \\24\\ See 78 FR 6408 (January 30, 2013), as amended by 78 FR 35430 (June 12, 2013). These two... Federal Register. See 76 FR 27390 (May 11, 2011). The Board had initial responsibility for...

  12. 77 FR 66219 - Clearing Agency Standards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-02

    ... to clear credit default swaps. See Exchange Act Release Nos. 60372 (July 23, 2009), 74 FR 37748 (July 29, 2009), 61973 (Apr. 23, 2010), 75 FR 22656 (Apr. 29, 2010) and 63389 (Nov. 29, 2010), 75 FR 75520 (Dec. 3, 2010) (CDS clearing by ICE Clear Europe Limited); 60373 (July 23, 2009), 74 FR 37740 (July...

  13. 77 FR 47800 - Adoption of Recommendations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ...\\ See generally Exec. Order No. 12,866, 58 FR 51735 (Oct. 4, 1993). Independent regulatory agencies, as.... Order No. 13,132, 64 FR 43255 (Aug. 10, 1999). \\4\\ See generally Exec. Order No. 12,630, 53 FR 8859 (Mar... Rules, 50 FR 28364 (July 12, 1985) (preamble). Specifically, the recommendation states that ``...

  14. 78 FR 56202 - Ecological Restoration Policy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-12

    ... 24, 1977. Protection and enhancement of environmental quality (35 FR 4247, March 7, 1970; 42 FR 26967... February 8, 1972. Use of off-road vehicles on the public lands. (37 FR 2877, February 9, 1972). Amended by.... Executive Order 11988 issued May 24, 1977. Floodplain management (42 FR 26951 (May 25, 1977)). This...

  15. 76 FR 40012 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    .... Timetable: Action Date FR Cite NPRM To Be Determined Regulatory Flexibility Analysis Required: Yes. Agency...: Action Date FR Cite ANPRM 05/10/05 70 FR 24495 ANPRM Comment Period End 06/09/05 Notice of Public Meeting 05/03/10 75 FR 23245 NPRM 07/00/11 Regulatory Flexibility Analysis Required: Yes. Agency...

  16. 78 FR 8362 - Energy Labeling Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-06

    ... information about the Rule can be found at: http://www.ftc.gov/energy . \\3\\ 44 FR 66466 (Nov. 19, 1979). The... the present one. See 77 FR 15298 (Mar. 15, 2012) (regulatory review of the Rule); 76 FR 45715 (Aug. 1, 2011) (proposed expanded light bulb coverage). \\4\\ See 52 FR 46888 (Dec. 10, 1987) (central...

  17. 75 FR 12564 - Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-16

    ..., 2009 16, 2009. 220887 Fort Worth Zoo 74 FR 55062; October February 19, 2010 26, 2009. 223400 Earth... Zoo 74 FR 66675; December February 2, 2010 16, 2009. 231594 Seneca Park Zoo 74 FR 58977; November... Hollywood Animals, Inc... 74 FR 47821; September January 15, 2010 17, 2009. 060472 Hollywood Animals,...

  18. 75 FR 2560 - Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-15

    ... Louisiana State 74 FR 47821; September December 3, 2009 University LSU Museum 17, 2009. of Natural Science. 217648 U.S. Fish and Wildlife 74 FR 37240, July 28, December 8, 2009 Service. 2009. 222610 Atlanta-Fulton County 74 FR 46222, September December 17, 2009 Zoo. 8, 2009. 225871 Lorenzo J. Ferraro..... 74 FR...

  19. 75 FR 60017 - Hazardous Materials; Miscellaneous Amendments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-29

    ..., 2000 (65 FR 19477), or you may visit http://www.regulations.gov . Docket: You may view the public... transported under specific conditions. In the HM-215J final rule published January 4, 2010 (75 FR 63), PHMSA... final rule to Docket HM-213 (68 FR 19257; April 18, 2003) and the response to appeals (68 FR...

  20. 77 FR 55371 - System Safety Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-07

    ... management system (SMS). 75 FR 68224, Nov. 5, 2010; and 76 FR 5296, Jan. 31, 2011. An SMS ``is a comprehensive, process-oriented approach to managing safety throughout the organization.'' 75 FR 68224, Nov. 5... Order No. 20, Notice No. 1 (EO 20). 61 FR 6876, Feb. 22, 1996. EO 20 required, among other...

  1. 78 FR 60667 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-02

    ... incorporation by reference of a certain other publication listed in this AD as of January 24, 2013 (78 FR 1723... 2, 2013 (78 FR 25666), and proposed to supersede AD 2012-26-51, Amendment 39-17312 (78 FR 1723... (78 FR 1723, January 9, 2013)] to require amendment of the AFM by incorporating the Airbus TR....

  2. 78 FR 8089 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-05

    ... in lieu of the information published at 76 FR 73537 and 76 FR 67325. The table provided here... rule published at 76 FR 73537, in the November 29, 2011, issue of the Federal Register, and in the proposed correction rule published at 76 FR 67325, in the November 9, 2012, issue of the Federal...

  3. 76 FR 40208 - Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... Date FR Cite NPRM 03/00/12 Regulatory Flexibility Analysis Required: Yes. Agency Contact: Sean Harrison... Rule 506 of Regulation D. Timetable: Action Date FR Cite NPRM 06/01/11 76 FR 31518 NPRM Comment Period... by registrants. Timetable: Action Date FR Cite NPRM 03/00/12 Regulatory Flexibility Analysis...

  4. 76 FR 31221 - Truth in Lending; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-31

    ... published a final rule in the Federal Register of April 25, 2011 (76 FR 22948) (FR Doc. 2011-8843), amending... contains other typographical errors. Accordingly, in the final rule, FR Doc. 2011-8843, published on April 25, 2011, (76 FR 22948) make the following corrections: PART 226-- Sec. 226.9 0 1. On page 23000,...

  5. 77 FR 73966 - Utah Regulatory Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-12

    ... of the Utah program in the January 21, 1981, Federal Register (46 FR 5899). You can also find later... receipt of the proposed amendment in the September 5, 2012, Federal Register (77 FR 54491), provided an... approved on December 3, 2007 (72 FR 68029) and November 14, 2008 (73 FR 67630). We notified Utah of...

  6. 75 FR 52724 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-27

    ... . SUPPLEMENTARY INFORMATION: Additions On 10/23/2009 (74 FR 54783-54784); 6/18/2010 (75 FR 34701-34702); 6/25/2010 (75 FR 36363-36371); and 7/9/2010 (75 FR 39497-39499), the Committee for Purchase From People Who Are... additional reporting, recordkeeping or other compliance requirements for small entities other than the...

  7. 78 FR 25858 - National Practitioner Data Bank

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-03

    ...) 443-2300. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. No. 2013-07521 of April 5, 2013 (78 FR... requirements. IV. Correction of Errors In FR Doc. No. 2013-07521 published April 5, 2013 (78 FR 20473), make... HUMAN SERVICES 45 CFR Parts 60 and 61 RIN 0906-AA87 National Practitioner Data Bank AGENCY:...

  8. 77 FR 60969 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-05

    ...: On 9/28/2012 (77 FR 59595), the Committee for Purchase From People Who Are Blind or Severely Disabled...-0655, or email CMTEFedReg@AbilityOne.gov . SUPPLEMENTARY INFORMATION: Additions On 8/3/2012 (77 FR 46411), 8/10/2012 (77 FR 47823), and 8/17/2012 (77 FR 49784), the Committee for Purchase From People...

  9. 76 FR 55678 - Tribal Consultation Policy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-08

    ... published a Federal Register (FR) notice formally announcing the 2010 ACF Tribal Consultation Session. 75 FR..., 2010, the revised ACF Tribal Consultation Policy was published in the FR seeking comments for 45 days. 75 FR 78709 (Dec. 16, 2010). The comment period closed on January 31, 2011. March 7-8, 2011, the...

  10. 75 FR 41696 - Appliance Labeling Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-19

    ... uses the terms lamp, lightbulb, and bulb interchangeably. \\2\\ 74 FR 57950 (Nov. 10, 2009). \\3\\ The Rule... Rulemaking (``ANPR'') (73 FR 40988) seeking comment on potential label changes.\\5\\ The Commission then held a... ( http://www.ftc.gov/bcp/workshops/lamp/transcript.pdf ). \\7\\ See 73 FR 72800 (Dec. 1, 2008); 74 FR...

  11. 77 FR 65999 - Assessments, Large Bank Pricing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-31

    ... capital and reserves score. \\7\\ 75 FR 23516 (May 3, 2010); 75 FR 72612 (November 24, 2010). While..., report date (March PRA notice).\\8\\ \\8\\ 76 FR 14460 (March 16, 2011). Commenters on the March PRA notice... public comment on July 27, 2011 (July PRA notice).\\10\\ \\10\\ 76 FR 44987 (July 27, 2011). In response...

  12. 77 FR 7974 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... effects on the respiratory system, including bronchiolitis obliterans, a debilitating and potentially... period ended on November 17, 2010. Timetable: Action Date FR Cite NPRM 08/17/10 75 FR 50718 NPRM Republished 10/15/10 75 FR 63425 NPRM Comment Period End 11/17/10 Final Action 12/30/11 76 FR 82117...

  13. 76 FR 64781 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-19

    ... approved the incorporation by reference of certain other publications as of March 6, 2008 (73 FR 5731... April 6, 2011 (76 FR 18960), and proposed to supersede AD 2008-03-04, Amendment 39-15353 (73 FR 5731, January 31, 2008). That NPRM (76 FR 18960, April 6, 2011) proposed to correct an unsafe condition for...

  14. 78 FR 28159 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-14

    ... the lower frame fittings between Frame (FR) 41 and FR 46, on one A300-600 aeroplane a crack was detected in the area 2 of the foot of frame FR 46 at junction radius level. This frame, that was previously... 12866; 2. Is not a ``significant rule'' under the DOT Regulatory Policies and Procedures (44 FR...

  15. 77 FR 57484 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-18

    ... June 25, 2012 (77 FR 37829), and proposed to supersede AD 2005-25-21, Amendment 39-14414 (70 FR 73919... corresponds to FAA AD 2005-25-21, Amendment 39-14414 (70 FR 73919, December 14, 2005)] was issued to update... participate in developing this AD. We received no comments on the NPRM (77 FR, 37829, June 25, 2012), or...

  16. 77 FR 63270 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-16

    ... of an A320 family aeroplane, it was discovered that a fastener was missing at FR 24 between stringer... aluminum rivet, Part Number (P/N) ASNA2050DXJ040, is to connect the FR 24 to the FR 24 Tee. The hole where... Policies and Procedures (44 FR 11034, February 26, 1979); 3. Will not affect intrastate aviation in...

  17. 75 FR 22100 - Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-27

    ... the Federal Register on April 13, 2010 (75 FR 18781). At the Board meeting scheduled on the afternoon... meetings and public hearing. Persons attending Board meetings are requested to refrain from using...

  18. 75 FR 68405 - Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ...'' (Presidential Sig.) [FR Doc. C1-2010-27668 Filed 11-5-10; 8:45 am] Billing Code 1505-01-D ..., 2010--Continuation of U.S. Drug Interdiction Assistance to the Government of Colombia Correction...

  19. 78 FR 73377 - Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-06

    .... Drug Interdiction Assistance to the Government of Colombia''. (Presidential Sig.) [FR Doc. C1-2013...--Continuation of U.S. Drug Interdiction Assistance to the Government of Colombia Correction In...

  20. 77 FR 64663 - Iranian Transactions Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    .... 8501-8551); Pub. L. 112-81, 125 Stat. 1298; E.O. 12613, 52 FR 41940, 3 CFR, 1987 Comp., p. 256; E.O. 12957, 60 FR 14615, 3 CFR, 1995 Comp., p. 332; E.O. 12959, 60 FR 24757, 3 CFR, 1995 Comp., p. 356; E.O. 13059, 62 FR 44531, 3 CFR, 1997 Comp., p. 217; E.O. 13599, 77 FR ] 6659, February 8, 2012; E.O....

  1. 78 FR 12295 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-22

    ... . SUPPLEMENTARY INFORMATION: Additions On 11/27/2012 (77 FR 70737-70738); 11/30/2012 (77 FR 71400-71401); 12/14/2012 (77 FR 74469-74470); 12/21/2012 (77 FR 75616); and 12/31/ 2012 (77 FR 77038), the Committee for...--Battery, 3.6V, A, Lithium NSN: 6140-01-032-1326--Battery, Storage, 12V, Lead Acid, Wet Charged NSN:...

  2. 77 FR 8082 - Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... the Commission repropose amendments in this area. Timetable: Action Date FR Cite NPRM 07/17/09 74 FR 35076 NPRM Comment Period End 09/15/09 Final Rule 12/23/09 74 FR 68334 Final Rule Effective 02/28/10... with section 926 of the Dodd-Frank Act. Timetable: Action Date FR Cite NPRM 06/01/11 76 FR 31518...

  3. 77 FR 16170 - Iranian Transactions Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-20

    ...''), at a later date. See 77 FR 7660 (Feb. 13, 2012), for a Notice containing additional information on E...-8551); E.O. 12613, 52 FR 41940, 3 CFR, 1987 Comp., p. 256; E.O. 12957, 60 FR 14615, 3 CFR, 1995 Comp., p. 332; E.O. 12959, 60 FR 24757, 3 CFR, 1995 Comp., p. 356; E.O. 13059, 62 FR 44531, 3 CFR,...

  4. 77 FR 11723 - Iranian Financial Sanctions Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-27

    ... provisions of CISADA (75 FR 49836). On September 28, 2010, the President issued Executive Order 13553 (75 FR... Stat. 1298; E.O. 12957, 60 FR 14615, 3 CFR, 1995 Comp., p. 332; E.O. 13553, 75 FR 60567, 3 CFR, 2010 Comp., p. 253; E.O. 13599, 77 FR 6659, February 8, 2012. Subpart A--Relation of This Part to Other...

  5. 77 FR 46409 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-03

    ... . SUPPLEMENTARY INFORMATION: Additions On 4/27/2012 (77 FR 25146-25147); 5/18/2012 (77 FR 29596); 6/1/2012 (77 FR 32591-32592); 6/8/2012 (77 FR 34026-34027; and 6/15/2012 (77 FR 35942-35944), the Committee for Purchase... added to the Procurement List: Products Combat Arms Ear Plug NSN: 6515-01-576-8796--Skull Screws...

  6. 76 FR 70422 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-14

    ... Interior, National Park Service, Midwest Region, Omaha, NE Service Type/Locations: Mail Management Support... . SUPPLEMENTARY INFORMATION: Additions On 3/25/2011 (76 FR 16733-16734); 8/26/2011 (76 FR 53419-53420); 9/ 2/2011 (76 FR54741-54742); 9/9/2011 (76 FR 55883); and 9/16/2011 (76 FR 57719-57720), the Committee...

  7. 77 FR 24634 - Magnuson-Stevens Act Provisions; Fisheries off West Coast States; Biennial Specifications and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-25

    ... management measures for most species of the Pacific Coast groundfish fishery (75 FR 67810). The final rule to... Groundfish Fishery was published on May 11, 2011 (76 FR 27508). This final rule was subsequently amended by several inseason actions (76 FR 39313, 76 FR 67092, 76 FR 79122, 77 FR 12503, 77 FR 22679). On...

  8. 78 FR 14190 - Regulation of Fuels and Fuel Additives: Identification of Additional Qualifying Renewable Fuel...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-05

    ...'') for the qualifying renewable fuels they produce through approved fuel pathways. See 75 FR 14670 (March 26, 2010); 75 FR 26026 (May 10, 2010); 75 FR 37733 (June 30, 2010); 75 FR 59622 (September 28, 2010); 75 FR 76790 (December 9, 2010); 75 FR 79964 (December 21, 2010); 77 FR 1320 (January 9, 2012); and...

  9. 78 FR 73112 - Boundary Expansion of Thunder Bay National Marine Sanctuary

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-05

    ... published June 14, 2013 (78 FR 35776), extended August 15, 2013 (78 FR 49700) and October 28, 2013 (78 FR... (78 FR 35776). An accompanying draft environmental impact statement (DEIS) was also published (78 FR... October 18, 2013 (78 FR 49700) then until November 27, 2013 (78 FR 64186) to gather more information...

  10. 78 FR 22767 - Supplemental Standards of Ethical Conduct for Employees of the National Credit Union Administration

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-17

    ... February 3, 1993. See 57 FR 35006-35067, as corrected at 57 FR 48557, 57 FR 52483, and 60 FR 51167, with additional grace period extensions for certain existing provisions at 59 FR 4779-4780, 60 FR 6390-6391, and 60 FR 66857-66858. The Standards, as corrected and amended, are codified in 5 CFR part 2635....

  11. 77 FR 45903 - National Organic Program; Amendments to the National List of Allowed and Prohibited Substances...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-02

    ..., the NOP has published multiple amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007...

  12. 75 FR 42676 - National Emission Standards for Hazardous Air Pollutants for Major Sources: Industrial...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-22

    ... documents published on June 4, 2010. Comments on FR Doc 2010-10827 (75 FR 32006); FR Doc 2010-10832 (75 FR 31896); and FR Doc 2010-10821 (75 FR 31938) must be received on or before August 23, 2010. ADDRESSES... extended the public comment period to August 3, 2010. 75 FR 32682. Today, EPA is further extending...

  13. 75 FR 25224 - Energy Conservation Program for Commercial Equipment: Decision and Order Granting a Waiver to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-07

    ...-conditioning and heating equipment, effective January 8, 2007. 71 FR 71340. DOE adopted Air- Conditioning and.... Mitsubishi (72 FR 17528, April 9, 2007); Samsung (72 FR 71387, Dec. 17, 2007); Fujitsu (72 FR 71383, Dec. 17, 2007); Daikin (73 FR 39680, July 10, 2008); Daikin (74 FR 15955, April 8, 2009); Sanyo (74 FR...

  14. 75 FR 54579 - Inclusion of the Hellbender, Including the Eastern Hellbender and the Ozark Hellbender, in...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-08

    ... CITES took effect on May 23, 1977 (42 FR 10465, February 22, 1977), after the first meeting of the... Federal Register between 1982 and 1994 (47 FR 58454, 50 FR 37958, 54 FR 554, 56 FR 58804, and 59 FR 58982..., 2001 (66 FR 54808). We gave the Ozark hellbender a listing priority number (LPN) of 6 due...

  15. 76 FR 61481 - Endangered and Threatened Wildlife and Plants; Endangered Status for the Alabama Pearlshell...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-04

    ... protection under the Act in the May 4, 2004, Federal Register (69 FR 24876). Candidate species are assigned... using our available resources. In the 2004, 2005 (70 FR 24870), 2006 (71 FR 53756), 2007 (72 FR 69034), 2008 (73 FR 75176), 2009 (74 FR 57869), and 2010 (75 FR 69221) Federal Register Candidate Notices...

  16. 77 FR 60803 - Endangered and Threatened Wildlife and Plants; Endangered Species Status for the Fluted...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-04

    ... identified as a candidate for protection under the Act in the October 25, 1999, Federal Register (64 FR 57534... consider the LPN when prioritizing and funding conservation actions. In our 1999 (64 FR 57534), 2001 (66 FR 54808), 2002 (67 FR 40657), 2004 (69 FR 24876), 2005 (70 FR 24870), and 2006 (71 FR 53756)...

  17. 76 FR 60788 - Patient Protection and Affordable Care Act; Establishment of Exchanges and Qualified Health Plans...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-30

    ... July 15, 2011 (76 FR 41866 and 76 FR 41930, respectively), is extended from 5 p.m. Eastern Standard... Register (76 FR 41866 through 41927 and 76 FR 41930 through 41956, respectively). The first rule would... (76 FR 51148, 76 FR 51202, and 76 FR 50931, respectively), about eligibility determinations by...

  18. 76 FR 5590 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-01

    ... published a notice in the Federal Register (75 FR 70919) requesting public comment for 60 days on the... Employment with the Board of Governors of the Federal Reserve System. Agency form numbers: FR 28, FR 28s, FR... reporting hours: 3,558 hours. Estimated average hours per response: FR 28: 1 hour; FR 28s: 1 minute; FR...

  19. 75 FR 45572 - Oil Pollution Prevention; Spill Prevention, Control, and Countermeasure (SPCC) Rule-Proposed...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-03

    ... (SPCC) regulation (67 FR 47042). The rule became effective on August 16, 2002. The final rule included... FR 1348), on April 17, 2003 (68 FR 18890), on August 11, 2004 (69 FR 48794), on February 17, 2006 (71 FR 8462), on May 16, 2007 (72 FR 27444), and again on June 19, 2009 (74 FR 29136). These...

  20. 76 FR 78945 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-20

    ..., section 337 of the Tariff Act of 1930, the North American Free Trade Agreement (NAFTA) Article 1904.13... FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997);...

  1. 75 FR 52069 - Hazardous Materials: Harmonization With the United Nations Recommendations, International...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-24

    ... April 11, 2000 (65 FR 19477), or you may visit http://www.regulations.gov . Docket: You may view the... final rule published December 21, 1990 (Docket HM-181; 55 FR 52402), the Research and Special Programs... FR 67390; HM- 215B, 62 FR 24690; HM-215C, 64 FR 10742; HM-215D, 66 FR 33316; HM-215E, 68 FR 44992;...

  2. 75 FR 51919 - National Organic Program; Amendment to the National List of Allowed and Prohibited Substances...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-24

    ... NOSB. Since established, the National List has been amended twelve times: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007...

  3. 75 FR 38693 - National Organic Program; Amendments to the National List of Allowed and Prohibited Substances...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-06

    ... NOSB. Since established, the National List has been amended eleven times: October 31, 2003, (68 FR 61987); November 3, 2003, (68 FR 62215); October 21, 2005, (70 FR 61217), June 7, 2006, (71 FR 32803); September 11, 2006, (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007, (72 FR 58469); December...

  4. 78 FR 52694 - Price Cap Rules for Certain Postal Rate Adjustments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-26

    ...-6820. SUPPLEMENTARY INFORMATION: Regulatory History 72 FR 5230, February 5, 2007 72 FR 29284, May 25, 2007 72 FR 33261, June 15, 2007 72 FR 50744, September 4, 2007 72 FR 63622, November 9, 2007 73 FR... errata several days later. Notice of Errata, March 25, 2013 (Errata). See also 78 FR 22490, April...

  5. 76 FR 34683 - Withdrawal of Notices Inviting Applications for New Awards for Fiscal Year (FY) 2011...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-14

    ... Program. SUMMARY: On September 17, 2010 (75 FR 57000) (DDRA); October 1, 2010 (75 FR 60740) (FRA); January 13, 2011 (76 FR 2349) (BIE) and (76 FR 2353) (IRS); January 25, 2011 (76 FR 4330) (AORC); February 8, 2011 (76 FR 6769) (UISFL); and March 22, 2011 (76 FR 15956) (Comprehensive Program), the...

  6. 78 FR 22941 - Sidump'r Trailer Company, Inc., Grant of Petition for Decision of Inconsequential Noncompliance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-17

    ... published, with a 30-day public comment period, on August 16, 2007, in the Federal Register (72 FR 46127... FR 30989, 68 FR 7406 and 64 FR 49049), as well as small production quantities of vehicles (66 FR 22069, 63 FR 16857, 66 FR 20028 and 68 FR 7406). Those temporary exemptions were granted based...

  7. 78 FR 21314 - Medicare and State Health Care Programs: Fraud and Abuse; Electronic Health Records Safe Harbor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-10

    ... August 8, 2006 (71 FR 45110) and is scheduled to sunset on December 31, 2013 (42 CFR 1001.952(y)(13... arrangements.'' 56 FR 35952, 35958 (July 29, 1991). \\1\\ 56 FR 35952 (July 29, 1991); 61 FR 2122 (Jan. 25, 1996); 64 FR 63518 (Nov. 19, 1999); 64 FR 63504 (Nov. 19, 1999); 66 FR 62979 (Dec. 4, 2001); 71 FR...

  8. 77 FR 15765 - Food and Drug Administration Modernization Act of 1997: Modifications to the List of Recognized...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-16

    ... published in the Federal Register of February 25, 1998 (63 FR 9561), FDA announced the availability of a..., 1998 (63 FR 9561) October 16, 1998 (63 FR 55617) July 12, 1999 (64 FR 37546) November 15, 2000 (65 FR 69022) May 7, 2001 (66 FR 23032) January 14, 2002 (67 FR 1774) October 2, 2002 (67 FR 61893) April...

  9. 78 FR 4324 - Occupational Exposure to Hazardous Chemicals in Laboratories (Non-Mandatory Appendix); Technical...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-22

    ..., 655, 657); Secretary of Labor's Order No. 12-71 (36 FR 8754), 8-76 (41 FR 25059), 9-83 (48 FR 35736), 1-90 (55 FR 9033), 6-96 (62 FR 111), 3-2000 (65 FR 50017), or 5-2007 (72 FR 31159), 4-2010 (75 FR 55355) or 1-2012 (77 FR 3912), as applicable; and 29 CFR part 1911. All of subpart Z issued...

  10. 75 FR 54064 - Consultation Agreements: Proposed Changes to Consultation Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-03

    ... 1908 have been reviewed under Executive Order 12612, Federalism (52 FR 41685; October 30, 1987), which... FR 111), January 2, 1997; No. 3-2000 (65 FR 50017), No. 5-2007 (72 FR 31159). Signed at Washington... Act of 1970 (29 U.S.C. 656, 657, 667, 670 672) and Secretary of Labor's Order No. 6-96 (62 FR 111);...

  11. 81 FR 52689 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2016-08-09

    ...; FR 3064b--Annual. Respondents: Issuers of debit cards (FR 3064a) and payment card networks (FR 3064b...''). Current Actions: The Board proposes to revise the debit card issuer survey (FR 3064a) by deleting... Revisions to FR 3064a I. Information for all Debit Card Transactions (including general- use prepaid......

  12. 75 FR 1302 - Hazardous Materials: Transportation of Lithium Batteries

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... the Federal Register published on April 11, 2000 (65 FR 19477), or you may visit http://www...-- Safety advisories issued by PHMSA to the public (64 FR 36743 ; 72 FR 14167 ) and by the FAA to the... ineffective. PHMSA's December 15, 2004 interim final rule (69 FR 75208, correction, 71 FR 56894 ), based...

  13. 78 FR 16761 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-18

    ... for obtaining an exemption from the vision requirements (74 FR 7097; 74 FR 15584; 76 FR 15361). Each... System (FDMS) published in the Federal Register on December 29, 2010 (75 FR 82132), or you may visit http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf . FOR FURTHER INFORMATION CONTACT: Elaine...

  14. 77 FR 22376 - Airport Improvement Program (AIP) Grant Assurances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-13

    ...), preference shall be given to Vietnam era veterans, Persian Gulf veterans, Afghanistan-Iraq war veterans...), were published on February 3, 1988, at 53 FR 3104 and amended on September 6, 1988, at 53 FR 34361; on August 29, 1989, at 54 FR 35748; on June 10, 1994 at 59 FR 30076; on January 4, 1995, at 60 FR 521;...

  15. 77 FR 76824 - Uniform Compliance Date for Food Labeling Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-31

    ... compliance dates of January 1, 2010, January 1, 2012, and January 1, 2014 (72 FR 9651, 73 FR 75564, and 75 FR... concept of establishing uniform compliance dates for labeling requirements (69 FR 24539). In the March 5... for labeling requirements is unnecessary (72 FR 9651). The Agency did not receive comments on...

  16. 78 FR 66251 - Electronic Fund Transfers(Regulation E)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-05

    ... published its remittance rule on February 7, 2012 (77 FR 6194) implementing section 1073 of the Dodd- Frank... revisions and amendments published in the Federal Register on July 10, 2012 (77 FR 40459), August 20, 2012 (77 FR 50244), May 22, 2013 (78 FR 30662), and August 14, 2013 (78 FR 49365) (collectively the...

  17. 78 FR 65107 - Loans in Areas Having Special Flood Hazards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-30

    ... rule in August 1996.\\11\\ \\11\\ 61 FR 45684 (Aug. 29, 1996). C. The Biggert-Waters Act Amendments Among... to incorporate these increased civil money penalties. See OCC: 77 FR 66529 (Nov. 11, 2012) and 77 FR 76354 (Dec. 28, 2012); Board: 77 FR 68680 (Nov. 16, 2012); FDIC: 77 FR 74573 (Dec. 17, 2012); and...

  18. 75 FR 5320 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-02

    ... comment. At the end of the comment period, the proposed information collections, along with an analysis of... before April 5, 2010. ADDRESSES: You may submit comments, identified by FR 4004, FR MSD-4, FR MSD-5, FR G-FIN, or FR G-FINW, by any of the following methods: Agency Web Site:...

  19. 75 FR 79709 - Semiannual Regulatory Agenda, Fall 2010

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... production and handling of organic agricultural products. Timetable: Action Date FR Cite ANPRM 03/14/08 73 FR... are reported and enforcement actions should be taken. Timetable: Action Date FR Cite NPRM 04/00/11.... Timetable: Action Date FR Cite NPRM 06/03/09 74 FR 26591 NPRM Comment Period End 08/03/09 Final Action...

  20. 75 FR 68468 - List of Fisheries for 2011

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ... MMPA (60 FR 45086, August 30, 1995). Because fisheries are classified on a per-stock basis, a fishery... classifies high seas fisheries on the LOF, see the preamble text in the final 2009 LOF (73 FR 73032; December... (63 FR 60, January 2, 1998), 2001 (67 FR 10671, March 8, 2002), 2002 (68 FR 17920, April 14,...

  1. Cross Sections: No. 1 Hold section at Fr 24 Looking ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Cross Sections: No. 1 Hold section at Fr 24 Looking Fwd, No 1 Hold Section at Fr 28 Looking Aft, No 2 Hold Section at Fr 48 Looking Aft, No 3 Hold Section at Fr 70 Looking Aft, No 4 Hold Section at Fr 90 Looking Aft - General John Pope, Suisun Bay Reserve Fleet, Benicia, Solano County, CA

  2. 76 FR 63619 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-13

    ... 2028A, Survey of Terms of Business Lending; the FR 2028B, Survey of Terms of Bank Lending to Farmers; and the FR 2028S, Prime Rate Supplement to the Survey of Terms of Lending. The FR 2028A and FR 2028B... Revision, of the Following Report Report title: Survey of Terms of Lending. Agency form number: FR...

  3. 76 FR 42737 - Privacy Act of 1974; System of Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-19

    ... Order 9397, as amended (73 FR 70239); Executive Order 10450, as amended (44 FR 1055); Executive Order... 10450, as amended (44 FR 1055); Executive Order 12333, as amended (73 FR 45325); Executive Order 12968... Privacy Act Regulation on March 28, 2008 (73 FR 16531), codified at 32 CFR part 1701. It published;...

  4. 78 FR 38033 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-25

    ... FR Y-14A, FR Y-14Q, or FR Y-14M, by any of the following methods: Agency Web site: http://www... collection. Agency form number: FR Y-14A/Q/M. OMB control number: 7100-0341. Frequency: Annually, semi... hours; Basel III/Dodd-Frank, 660 hours; and Regulatory capital, 660 hours. FR Y-14 Q: Securities risk,...

  5. 76 FR 21239 - Revision of Voting Rights Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-15

    ..., 1971 (36 FR 9781), and the final Procedures were published on September 10, 1971 (36 FR 18186). As a... revised Procedures were published for comment on March 21, 1980 (45 FR 18890), and final revised Procedures were published on January 5, 1981 (46 FR 870) (corrected at 46 FR 9571, Jan. 29, 1981). As...

  6. 78 FR 56922 - Endangered Species; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-16

    ............ 78 FR 25296; April June 17, 2013. 30, 2013. 673458 Sedgwick County Zoo.. 78 FR 25296; April June 26.... Park. 2013. 04821B Atlanta Fulton County 78 FR 27253; May 9, June 26, 2013. Zoo, Inc. 2013. 04821B Atlanta Fulton County 78 FR 27253; May 9, August 22, 2013. Zoo, Inc. 2013. 05176B Yang Li 78 FR 30325;...

  7. 78 FR 57634 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-19

    ... by FR 2052a and b, by any of the following methods: Agency Web site: http://www.federalreserve.gov.... Agency form numbers: FR 2052a and FR 2052b. OMB control number: 7100- to be assigned. Frequency: FR 2052a: Daily, twice a month, and on occasion. FR 2052b: monthly, quarterly, and on occasion. Reporters:...

  8. 77 FR 36950 - Airworthiness Directives; Dassault Aviation Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-20

    ... was published in the Federal Register on March 15, 2011 (76 FR 13924). That ] NPRM would have required... Since NPRM (76 FR 13924, March 15, 2011) Was Issued Since we issued the NPRM (76 FR 13924, March 15.... Accordingly, the NPRM (76 FR 13924, March 15, 2011) is withdrawn. Withdrawal of the NPRM (76 FR 13924,...

  9. 75 FR 74053 - Availability of Final Toxicological Profiles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-30

    ... priority substances was announced in the Federal Register on December 7, 2005 (70 FR 234). For prior versions of the list of substances, see Federal Register notices dated April 17, 1987 (52 FR 12866); October 20, 1988 (53 FR 41280); October 26, 1989 (54 FR 43619); October 17, 1990 (55 FR 42067); October...

  10. 75 FR 17305 - National Industrial Security Program Directive No. 1

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-06

    ... E.O. 12829, January 6, 1993 (58 FR 3479), as amended by E.O. 12885, December 14, 1993, (58 FR 65863... for guidance. On November 30, 2009, ISOO published a proposed rule in the Federal Register (74 FR..., 1993, 58 FR 3479, as amended by Executive Order 12885, December 14, 1993, 58 FR 65863. Sec. 2004.24 0...

  11. 77 FR 7890 - Semiannual Regulatory Agenda, Fall 2011

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    .... Timetable: Action Date FR Cite NPRM 04/29/11 76 FR 23914 NPRM Comment Period End 06/28/11 Final Action 06/00... organic agricultural products. Completed: Reason Date FR Cite Final Action 08/03/11 76 FR 46595 Final... steps for natural disasters, including certain other drought situations. Timetable: Action Date FR...

  12. 76 FR 26962 - Airworthiness Directives; Airbus Model A300 B2-1C, A300 B2-203, A300 B2K-3C, A300-B4-103, A300 B4...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-10

    ... through 3,000 flight cycles FR40) STGR11 LH/RH (FR27 through FR32) STGR13 LH/ RH (FR 26 through FR28, FR31 through FR40) STGR27 LH/RH (FR 27 through FR32) STGR43 LH/ RH (FR 26 through FR39) STGR49 RH (FR26 through... AD. Discussion On December 20, 1989, we issued AD 90-01-10, Amendment 39-6448 (55 FR 261, January...

  13. 78 FR 9678 - Energy Employees Occupational Illness Compensation Program Act of 2000; Revision to the List of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-11

    ... published by DOE on February 6, 2012 (77 FR 24); May 26, 2011 (76 FR 102); June 30, 2010 (75 FR 125), as amended August 3, 2010 (75 FR 148); April 9, 2009 (74 FR 67); June 28, 2007 (72 FR 124); November 30, 2005 (70 FR 229); August 23, 2004 (69 FR 162); July 21, 2003 (68 FR 139); December 27, 2002 (67 FR...

  14. 78 FR 76789 - Additional Connect America Fund Phase II Issues

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-19

    ... Support Disbursements. In the USF/ICC Transformation Order, 76 FR 73830, November 29, 2011, the Commission... Transformation Order and FNPRM, 76 FR 73830, November 29, 2011 and 76 FR 78384, December 16, 2011, included...

  15. 78 FR 69517 - Commission Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-19

    ... published in 78 FR 38782, June 27, 2013, was subject to a comment deadline of August 26, 2013.Written... published in 78 FR 64260, October 28, 2013. Authority: Public Law 91-575, 84 Stat. 1509 et seq., 18 CFR... From the Federal Register Online via the Government Publishing Office SUSQUEHANNA RIVER...

  16. 76 FR 35721 - Consumer Leasing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-20

    ... Regulation M (which implements the CLA) consistent with these provisions of the Dodd-Frank Act. 76 FR 18349... reasons stated in its April 2011 final rule. See 76 FR 18349, 18351-52. List of Subjects in 12 CFR Part... Leasing AGENCY: Board of Governors of the Federal Reserve System. ACTION: Final rule, staff...

  17. 78 FR 8195 - Biweekly Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-05

    ..., 2013. The last biweekly notice was published on January 22, 2013 (78 FR 4469). ADDRESSES: You may... NRC E-Filing rule (72 FR 49139; August 28, 2007). The E-Filing process requires participants to submit... submission form. In order to serve documents through the Electronic Information Exchange System, users...

  18. 76 FR 76199 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-06

    ... Assistant... DY110134 9/7/2011 (Economic Policy). Authority: 5 U.S.C. 3301 and 3302; E.O. 10577, 3 CFR 1954... in the Federal Register at http://www.gpoaccess.gov/fr/ fr/. A consolidated listing of all... 9/23/2011 Evaluation and Secretary for Policy Development. Planning and Policy...

  19. 77 FR 34186 - Appeal Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-11

    ... potential civil rights issues. The review reveals no factors indicating the NRCS Appeal Procedures would... final rule (71 FR 28239). Section 275 of the 1994 Act, 7 U.S.C. 6995, requires USDA agencies to hold... agency level. This final rule amends the interim final rule published May 16, 2006 (71 FR 28239),...

  20. 75 FR 32142 - Combustible Dust

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-07

    ... combustible dust in the workplace. (74 FR 54334, Oct. 21, 2009). OSHA plans to use the information received in... Secretary's Order 5-2007 (72 FR 31160). Signed at Washington, DC, on June 1, 2010. David Michaels, Assistant... not limited to, wood, coal, plastics, biosolids, candy, sugar, spice, starch, flour, feed,...

  1. 76 FR 1516 - Inmate Furloughs

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-11

    ... custody status. A proposed rule on this subject was published on December 6, 2006 (71 FR 70696). We... finalizes, with minor changes, the proposed rule published on December 6, 2006 (71 FR 70696). Executive..., consume, or administer any narcotic drugs, marijuana, alcohol, or intoxicants in any form, or frequent...

  2. 75 FR 62591 - Oral Argument

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-12

    ... invited amicus curiae to submit briefs in these matters, see 75 FR 20007, Apr. 16, 2010; 75 FR 29366, May... given of the scheduling of oral argument in the matters of: Hyginus U. Aguzie v. Office of Personnel Management, MSPB Docket Number DC-0731-09-0261-R-1; Jenee Ella Hunt-O'Neal v. Office of Personnel...

  3. 78 FR 2147 - Seagoing Barges

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-09

    ... Act notice regarding our public dockets in the January 17, 2008, issue of the Federal Register (73 FR... order FR Federal Register NPRM Notice of proposed rulemaking OCMI Officer in Charge, Marine Inspection... December 14, 2011, the Coast Guard published a direct final rule (DFR) entitled ``Seagoing Barges.'' 76...

  4. 76 FR 33653 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-09

    ..., which is used to monitor and track maritime traffic for purposes of both navigational safety and... AIS use in international waters. In the Report and Order, published at 71 FR 60067, October 12, 2006... NPRM), published at 71 FR 60102, October 12, 2006, on whether to extend the AIS designation to...

  5. 75 FR 43395 - Campaign Travel

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-26

    ... of 2007. See Final Rules on Campaign Travel, 74 FR 63951 (Dec. 7, 2009) (the ``Travel Rules... 11 CFR 9004.7 at a later date. Travel Rules, 74 FR at 63951. Through this Notice, the Commission... of the Honest Leadership and Open Government Act governing campaign travel on noncommercial...

  6. 76 FR 75524 - Marine Mammals

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-02

    ... No. 14241, issued on July 15, 2009 (74 FR 3668), authorizes the permit holder to conduct research on...) issued on July 27, 2010 (75 FR 47779): (1) Included authorization for collection of a skin and blubber... added zinc oxide marking for animals being tagged or biopsied. The permit, as amended, is valid...

  7. 77 FR 53923 - Biweekly Notice;

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-04

    ... 21, 2012. The last biweekly notice was published on August 21, 2012, (77 FR 50534). ADDRESSES: You... NRC E-Filing rule (72 FR 49139; August 28, 2007). The E-Filing process requires participants to submit... calculated peak containment internal pressure (P a ) from 49.4 pounds per square inch gauge (psig) to...

  8. 77 FR 37284 - Technical Amendments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-21

    ... for the Employment Standards Administration (ESA). Secretary's Order 13-71, 36 FR 8755 (May 12, 1971... dissolved ESA into its constituent components. See Secretary's Order 10-2009, 74 FR 58834 (Nov. 13, 2009..., from ``Employment Standards Administration'' to ``Office of Workers' Compensation Programs.'' 75...

  9. 77 FR 3321 - Public Hearing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-23

    ... [Federal Register Volume 77, Number 14 (Monday, January 23, 2012)] [Notices] [Pages 3321-3323] [FR... Director. [FR Doc. 2012-1185 Filed 1-20-12; 8:45 am] BILLING CODE 7040-01-P ... water withdrawal of up to 0.950 mgd. 18. Project Sponsor and Facility: Stanley S. Karp Sr....

  10. 76 FR 70883 - Clothing Allowance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-16

    ... published in the Federal Register on February 2, 2011 (76 FR 5733-5734), VA proposed to amend its... appliances affecting different articles of clothing. 76 FR 5733; Sursely, 551 F.3d at 1356. VA will make the... allowances. The amendment provides for an annual clothing allowance for each qualifying prosthetic...

  11. 76 FR 53157 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-25

    ... Federal Register at http://www.gpoaccess.gov/fr/ fr/. A consolidated listing of all authorities as of June... MANAGEMENT Excepted Service AGENCY: U.S. Office of Personnel Management (OPM). ACTION: Notice. SUMMARY: This... excepted service as required by 5 CFR 213.103. FOR FURTHER INFORMATION CONTACT: Roland Edwards,...

  12. 75 FR 42662 - Debt Collection

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-22

    ... FCCS. 65 FR 70390 (Nov. 20, 2000). Overview of Proposed Regulatory Changes This proposed regulation... to PBGC by various individuals, PBGC-13, Debt Collection. See 65 FR 25397 (May 1, 2000). Subpart A... promote aggressive debt collection, using for each debt all available and appropriate collection...

  13. 76 FR 17331 - Debt Collection

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-29

    ... Federal Register at 75 FR 68956. This final rule adopts, without change, that interim final rule that set... removing 12 CFR part 1704 that was published in the Federal Register at 75 FR 68956 on November 10, 2010... RIN 2590-AA15 Debt Collection AGENCY: Federal Housing Finance Agency; Office of Federal...

  14. 76 FR 69801 - Conductor Certification

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-09

    ... Federal Register on November 10, 2010. See 75 FR 69166. In the NPRM, FRA solicited public comment on the... (75 FR 69166, 69170 (Nov. 10, 2010)) and in the section-by-section analysis to this final rule: Under....105(c)(1)-(3), a railroad may test and evaluate its designated conductors under subpart B before...

  15. 75 FR 76399 - Marine Mammals

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-08

    ... threatened species (50 CFR parts 222-226). On May 20, 2010 (75 FR 28236), notice was published that an amendment to Permit No. 13602, issued on September 4, 2009 (74 FR 46569), had been requested by the permit... Williams, Long Marine Lab, Institute of Marine Sciences, University of California at Santa Cruz,...

  16. 77 FR 7946 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... Agenda presents a forecast of the rulemaking activities that the Department of Health and Human Services... Activities (CMS-2346-F). 372 Five Year Review of Work 0938-AQ87 Relative Value Units Under the Physician Fee... programs. Timetable: Action Date FR Cite NPRM 06/19/09 74 FR 29153 NPRM Comment Period End 08/18/09...

  17. 76 FR 67604 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-02

    ... Flexibility Analysis (IRFA) was incorporated in the Third FNPRM, at 71 FR 65448, November 8, 2006. The... with the Commission's earlier determination in the Third Report and Order in this proceeding, 73 FR...) When Used in the GMDSS,'' with Annex, adopted 23 November 1995, IBR approved for Sec. 80.1083. (22)...

  18. 78 FR 6276 - Aviation Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-30

    ... Third Report and Order, at 76 FR 17347, March 29, 2011, in this proceeding, the Commission amended Sec.... 87.195. In the Stay Order, at 76 FR 17353, March 29, 2011, which was published in the Federal... for public comment. This Third FNPRM requests such comment. I. Procedural Matters A. Ex Parte...

  19. 75 FR 28306 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-20

    ....gpoaccess.gov/fr/ fr/. A consolidated listing of all authorities as of June 30 is also published each year... Logistics of Defense Legislative Affairs. Effective April 15, 2010. Department of the Army DWGS10098 Special Assistant to the Assistant Secretary of the Army (Manpower and Reserve Affairs). Effective April 2,...

  20. 75 FR 35095 - Excepted Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-21

    ....gov/fr/ fr/. A consolidated listing of all authorities as of June 30 is also published each year. The..., enterprise architecture, intelligence analysis, investigation, investigative analysis and cyber-related... temporary appointments in the following occupational series: Security (GS-0080), intelligence analysts...