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Sample records for frenkel defects

  1. One-Dimensional Poole-Frenkel Conduction in the Single Defect Limit.

    PubMed

    Pan, Deng; Fuller, Elliot J; Gül, O Tolga; Collins, Philip G

    2015-08-12

    A single point defect surrounded on either side by quasi-ballistic, semimetallic carbon nanotube is a nearly ideal system for investigating disorder in one-dimensional (1D) conductors and comparing experiment to theory. Here, individual single-walled nanotubes (SWNTs) are investigated before and after the incorporation of single point defects. Transport and local Kelvin Probe force microscopy independently demonstrate high-resistance depletion regions over 1.0 μm wide surrounding one point defect in semimetallic SWNTs. Transport measurements show that conductance through such wide depletion regions occurs via a modified, 1D version of Poole-Frenkel field-assisted emission. Given the breadth of theory dedicated to the possible effects of disorder in 1D systems, it is surprising that a Poole-Frenkel mechanism appears to describe defect scattering and resistance in this semimetallic system.

  2. Metastable Frenkel Pair Defect in Graphite: Source of Wigner Energy?

    NASA Astrophysics Data System (ADS)

    Ewels, C. P.; Telling, R. H.; El-Barbary, A. A.; Heggie, M. I.; Briddon, P. R.

    2003-07-01

    The atomic processes associated with energy storage and release in irradiated graphite have long been subject to untested speculation. We examine structures and recombination routes for interstitial-vacancy (I-V) pairs in graphite. Interaction results in the formation of a new metastable defect (an intimate I-V pair) or a Stone-Wales defect. The intimate I-V pair, although 2.9eV more stable than its isolated constituents, still has a formation energy of 10.8eV. The barrier to recombination to perfect graphite is calculated to be 1.3eV, consistent with the experimental first Wigner energy release peak at 1.38eV. We expect similar defects to form in carbon nanostructures such as nanotubes, nested fullerenes, and onions under irradiation.

  3. Frenkel-Defect-Mediated Chemical Ordering Transition in a Li-Mn-Ni Spinel Oxide.

    PubMed

    Ryoo, Hyewon; Bae, Hyung Bin; Kim, Young-Min; Kim, Jin-Gyu; Lee, Seongsu; Chung, Sung-Yoon

    2015-06-26

    Using spinel-type Li(Mn(1.5)Ni(0.5) )O4 with two different cations, Mn and Ni, in the oxygen octahedra as a model system, we show that a cation ordering transition takes place through the formation of Frenkel-type point defects. A series of experimental results based on atomic-scale observations and in situ powder diffractions along with ab initio calculations consistently support such defect-mediated transition behavior. In addition to providing a precise suggestion of the intermediate transient states and the resulting kinetic pathway during the transition between two phases, our findings emphasize the significant role of point defects in ordering transformation of complex oxides.

  4. A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection

    NASA Astrophysics Data System (ADS)

    Gao, David Z.; El-Sayed, Al-Moatasem; Shluger, Alexander L.

    2016-12-01

    Using density functional theory (DFT) calculations we demonstrate how electron injection can facilitate the creation of Frenkel defects in amorphous (a)-SiO2. The precursor sites composed of wide O-Si-O bond angles in amorphous SiO2 act as deep electron traps and can accommodate up to two extra electrons. Trapping of two electrons at these intrinsic sites results in weakening of a Si-O bond and creates an efficient bond breaking pathway for producing neutral O vacancies and {{{O}}}2- interstitial ions characterized by low transition barriers. The low barriers for the migration of {{{O}}}2- ions of about 0.2 eV facilitate the separation of created defects. This mechanism may have important implications for our understanding of dielectric breakdown and resistance switching in a-SiO2 based electronic and memory devices.

  5. A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection.

    PubMed

    Gao, David Z; El-Sayed, Al-Moatasem; Shluger, Alexander L

    2016-12-16

    Using density functional theory (DFT) calculations we demonstrate how electron injection can facilitate the creation of Frenkel defects in amorphous (a)-SiO2. The precursor sites composed of wide O-Si-O bond angles in amorphous SiO2 act as deep electron traps and can accommodate up to two extra electrons. Trapping of two electrons at these intrinsic sites results in weakening of a Si-O bond and creates an efficient bond breaking pathway for producing neutral O vacancies and [Formula: see text] interstitial ions characterized by low transition barriers. The low barriers for the migration of [Formula: see text] ions of about 0.2 eV facilitate the separation of created defects. This mechanism may have important implications for our understanding of dielectric breakdown and resistance switching in a-SiO2 based electronic and memory devices.

  6. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

    DOE PAGES

    Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; ...

    2017-01-06

    The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV andmore » 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.« less

  7. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

    NASA Astrophysics Data System (ADS)

    Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

    2017-01-01

    The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10-0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

  8. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

    PubMed Central

    Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

    2017-01-01

    The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from −20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies. PMID:28059109

  9. Variation of T c, lattice parameter and atomic ordering in Nb3Sn platelets irradiated with 12 MeV protons: correlation with the number of induced Frenkel defects

    NASA Astrophysics Data System (ADS)

    Flükiger, R.; Spina, T.; Cerutti, F.; Ballarino, A.; Scheuerlein, C.; Bottura, L.; Zubavichus, Y.; Ryazanov, A.; Svetogovov, R. D.; Shavkin, S.; Degtyarenko, P.; Semenov, Y.; Senatore, C.; Cerny, R.

    2017-05-01

    Nb3Sn platelets with thicknesses between 0.12 and 0.20 mm produced by a high isostatic pressure process at 1250 °C were irradiated at 300 K with 12 MeV protons. The effects of irradiation on the lattice parameter a, the atomic order parameter S and the transition temperature T c were measured as a function of proton fluence. In view of the presence of multiple energy radiation sources in future accelerators, the present proton data are compared with neutron irradiation data from the literature. The fluences for both types of radiation were replaced by the dpa number, the ‘displacements per atom’, calculated using the FLUKA code, which is proportional to the number of radiation induced Frenkel defects. It was found that the variation of both a and S for Nb3Sn after proton and neutron irradiation as a function of dpa fall almost on the same curve, in analogy to the recently reported correlation between T c and the dpa number. By a simultaneous irradiation of two adjacent thin Nb3Sn platelets, we have shown that this correlation is not only valid for the state of ‘steady energy loss’ (protons traveling through the first platelet) but also for the state of higher damage at the Bragg peak (second platelet). It follows that the number of radiation induced Frenkel defects in the A15 grains, calculated via the dpa number, can be considered as a ‘universal’ parameter, allowing the calculation of the variation of T c, a and S of Nb3Sn under the effect of multiple high energy radiation sources, as in future superconducting accelerators.

  10. Revised role for the Poole--Frenkel effect in deep-level characterization

    SciTech Connect

    Buchwald, W.R.; Johnson, N.M.

    1988-07-15

    The Poole--Frenkel effect is commonly used to decide between donorlike and acceptorlike electronic character for deep-level defects in semiconductors. However, there exists at least one defect, the EL2 center in GaAs, which is experimentally established to be a deep donor and yet does not exhibit the classical Poole--Frenkel effect for thermal emission of electrons. In this communication it is proposed that the existence of another well-documented deep-level phenomenon can suppress the Poole--Frenkel effect. Namely, a thermally activated capture cross section, which identifies an energy barrier to carrier capture and is commonly ascribed to a multiphonon emission process, introduces additional mechanisms which can alter the predominance of the Coulombic potential of the emitted carrier so as to suppress the electric-field-induced barrier lowering. A simple one-dimensional model is analyzed to qualitatively illustrate the combined phenomena.

  11. Ground state energy of N Frenkel excitons

    NASA Astrophysics Data System (ADS)

    Pogosov, W.; Combescot, M.

    2009-03-01

    By using the composite many-body theory for Frenkel excitons we have recently developed, we here derive the ground state energy of N Frenkel excitons in the Born approximation through the Hamiltonian mean value in a state made of N identical Q = 0 excitons. While this quantity reads as a density expansion in the case of Wannier excitons, due to many-body effects induced by fermion exchanges between N composite particles, we show that the Hamiltonian mean value for N Frenkel excitons only contains a first order term in density, just as for elementary bosons. Such a simple result comes from a subtle balance, difficult to guess a priori, between fermion exchanges for two or more Frenkel excitons appearing in Coulomb term and the ones appearing in the N exciton normalization factor - the cancellation being exact within terms in 1/Ns where Ns is the number of atomic sites in the sample. This result could make us naively believe that, due to the tight binding approximation on which Frenkel excitons are based, these excitons are just bare elementary bosons while their composite nature definitely appears at various stages in the precise calculation of the Hamiltonian mean value.

  12. Poole-frenkel piezoconductive element and sensor

    DOEpatents

    Habermehl, Scott D.

    2004-08-03

    A new class of highly sensitive piezoconductive strain sensor elements and sensors has been invented. The new elements function under conditions such that electrical conductivity is dominated by Poole-Frenkel transport. A substantial piezoconductive effect appears in this regime, allowing the new sensors to exhibit sensitivity to applied strain as much as two orders of magnitude in excess of prior art sensors based on doped silicon.

  13. Frenkel line and solubility maximum in supercritical fluids.

    PubMed

    Yang, C; Brazhkin, V V; Dove, M T; Trachenko, K

    2015-01-01

    A new dynamic line, the Frenkel line, has recently been proposed to separate the supercritical state into rigid-liquid and nonrigid gaslike fluid. The location of the Frenkel line on the phase diagram is unknown for real fluids. Here we map the Frenkel line for three important systems: CO(2), H(2)O, and CH(4). This provides an important demarcation on the phase diagram of these systems, the demarcation that separates two distinct physical states with liquidlike and gaslike properties. We find that the Frenkel line can have a similar trend as the melting line above the critical pressure. Moreover, we discuss the relationship between unexplained solubility maxima and Frenkel line, and we propose that the Frenkel line corresponds to the optimal conditions for solubility.

  14. [Frenkel: one of the forerunners of neurorehabilitation?].

    PubMed

    Cano-de-la-Cuerda, R

    2016-07-16

    Neurorehabilitation is understood as the process intended to reduce the deficiency, limitation of activity and restriction of participation experienced by people as a result of a neurological diseases, and where the professionals involved in this field will aim to reduce the functional involvement degree of the patient. Due to the ignorance existed about the plastic capacity in the nervous system in humans, the scientific origins of neurological rehabilitation is relatively recent, which are located around the Second World War. However, there are signs that the neurologist Heinrich Sebastian Frenkel (1860-1931) was able to establish the basis of neurorehabilitation before that time. There are historical concerning regarding the work conducted and published by Frenkel that would support the hypothesis, based on the characteristics of their treatment employed and documented methodologies, that what he called 'Ubungstherapie' (neurological gymnastic), it could be considered as the basis of what we consider today as modern neurorehabilitation. This knowledge could have been used by many authors who introduced those experiences and lessons learned to the multiple therapeutic methods that emerged after, even the most innovative and technological, while the roots of neurorehabilitation could be found at the end of the 19th century.

  15. Plasmon-Frenkel-exciton in a clustered solid

    NASA Astrophysics Data System (ADS)

    Rotkin, Slava V.; Suris, Robert A.

    1998-08-01

    The standard theory of the Frenkel exciton (a small radius exciton) is applied to a fullerene 2D solid. It is the dipole collective electron excitation of a single cluster which forms the delocalized plasmon-Frenkel-exciton (PFE) in a crystal. The PFE retarded interaction is taken into account. We present transverse PFE-polariton dispersion curves along with the Coulomb problem solution for longitudinal excitation in the 2D plane.

  16. Professor Heinrich Sebastian Frenkel: a forgotten founder of rehabilitation medicine.

    PubMed

    Zwecker, M; Zeilig, G; Ohry, A

    2004-01-01

    Frenkel was born and later on practiced medicine in Heiden, Swizerland. This small town became, by his vigilant and innovative work, a place of pilgrimage for neurologists. He was the first to introduce the concept of exercise to restore dexterity and to improve ambulation and so pioneered the specialty of physical medicine and rehabilitation. Frenkel's method and philosophy became the foundation of treatment for many chronic neurological disabling diseases. His personality and work influenced many famous neurologists, worldwide.

  17. Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

    NASA Astrophysics Data System (ADS)

    Crespillo, M. L.; Agulló-López, F.; Zucchiatti, A.

    2017-03-01

    An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO3 crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

  18. Frenkel electron on an arbitrary electromagnetic background and magnetic Zitterbewegung

    NASA Astrophysics Data System (ADS)

    Deriglazov, Alexei A.; Pupasov-Maksimov, Andrey M.

    2014-08-01

    We present Lagrangian which implies both necessary constraints and dynamical equations for position and spin of relativistic spin one-half particle. The model is consistent for any value of magnetic moment μ and for arbitrary electromagnetic background. Our equations coincide with those of Frenkel in the approximation in which the latter have been obtained by Frenkel. Transition from approximate to exact equations yields two structural modifications of the theory. First, Frenkel condition on spin-tensor turns into the Pirani condition. Second, canonical momentum is no more proportional to velocity. Due to this, even when μ=1 (Frenkel case), the complete and approximate equations predict different behavior of a particle. The difference between momentum and velocity means extra contribution to spin-orbit interaction. To estimate the contribution, we found exact solution to complete equations for the case of uniform magnetic field. While Frenkel electron moves around the circle, our particle experiences magnetic Zitterbewegung, that is oscillates in the direction of magnetic field with amplitude of order of Compton wavelength for the fast particle. Besides, the particle has dipole electric moment.

  19. Structure and dynamics of the Frenkel-Kontorova dislocations in electroconvection in liquid crystals

    SciTech Connect

    Chuvyrov, A. N.; Scaldin, O. A. Delev, V. A.; Lebedev, Yu. A.; Batyrshin, E. S.

    2006-12-15

    The Frenkel-Kontorova instability is studied in a 1D lattice of domains formed during electroconvection in nematic liquid crystals twisted by {pi}/2. It is found that generation of defects by such instability can be observed in this model medium. Among other things, it is shown that several types of defects with singular and nonsingular cores, as well as with a extended core, are formed in the 1D domain structure above the electroconvective instability threshold. The extended cores of dislocations are dissociated into a line, and the entire structure is isomorphic to two partial dislocations spaced by a certain distance, which are not observed in free form. Defects with a nonsingular core (zero topological index) exist owing to spiral hydrodynamic flows in convective rolls and are not observed in layers with a homogeneous orientation of molecules. It is shown that the formation of both types of defects follows the scenario of decay of dislocations with extended cores via detachment of nonsingular defects (i.e., discretely); as a result, a dislocation with a singular core is left. 'Breather' defects, which are the result of periodic creation and annihilation of dislocations with a topological index of {+-}1, are also observed. The effect of defects on the transition from the 1D to 2D structures is considered.

  20. Albert W. Frenkel (1919-2015): photosynthesis research pioneer, much-loved teacher, and scholar.

    PubMed

    Govindjee; Frenkel, Susanna

    2015-06-01

    Albert W. Frenkel, a pioneer in photosynthesis research, and discoverer of photophosphorylation in photosynthetic bacteria, is remembered here by two of us: Govindjee (historical corner editor of photosynthesis research) and Susanna Frenkel (SF; Albert Frenkel's daughter, who provided most of the family information).

  1. Thermodynamic assessment of oxygen diffusion in non-stoichiometric UO2±x from experimental data and Frenkel pair modeling

    NASA Astrophysics Data System (ADS)

    Berthinier, C.; Rado, C.; Chatillon, C.; Hodaj, F.

    2013-02-01

    The self and chemical diffusion of oxygen in the non-stoichiometric domain of the UO2 compound is analyzed from the point of view of experimental determinations and modeling from Frenkel pair defects. The correlation between the self-diffusion and the chemical diffusion coefficients is analyzed using the Darken coefficient calculated from a thermodynamic description of the UO2±x phase. This description was obtained from an optimization of thermodynamic and phase diagram data and modeling with different point defects, including the Frenkel pair point defects. The proposed diffusion coefficients correspond to the 300-2300 K temperature range and to the full composition range of the non stoichiometric UO2 compound. These values will be used for the simulation of the oxidation and ignition of the uranium carbide in different oxygen atmospheres that starts at temperatures as low as 400 K.

  2. Thermodynamic properties of supercritical carbon dioxide: Widom and Frenkel lines.

    PubMed

    Fomin, Yu D; Ryzhov, V N; Tsiok, E N; Brazhkin, V V

    2015-02-01

    Supercritical fluids are widely used in a number of important technological applications, yet the theoretical progress in the field has been rather moderate. Fairly recently, a new understanding of the liquidlike and gaslike properties of supercritical fluids has come to the fore, particularly with the advent of the Widom and Frenkel lines that aim to demarcate different physical properties on the phase diagram. Here, we report the results of a computational study of supercritical carbon dioxide, one of the most important fluids in the chemical industry. We study the response functions of CO_{2} in the supercritical state and calculate the locations of their maxima (Widom lines). We also report the preliminary calculations of the Frenkel line, the line of crossover of microscopic dynamics of particles. Our insights are relevant to physical processes in the atmosphere of Venus and its evolution.

  3. Thermodynamic properties of supercritical carbon dioxide: Widom and Frenkel lines

    NASA Astrophysics Data System (ADS)

    Fomin, Yu. D.; Ryzhov, V. N.; Tsiok, E. N.; Brazhkin, V. V.

    2015-02-01

    Supercritical fluids are widely used in a number of important technological applications, yet the theoretical progress in the field has been rather moderate. Fairly recently, a new understanding of the liquidlike and gaslike properties of supercritical fluids has come to the fore, particularly with the advent of the Widom and Frenkel lines that aim to demarcate different physical properties on the phase diagram. Here, we report the results of a computational study of supercritical carbon dioxide, one of the most important fluids in the chemical industry. We study the response functions of CO2 in the supercritical state and calculate the locations of their maxima (Widom lines). We also report the preliminary calculations of the Frenkel line, the line of crossover of microscopic dynamics of particles. Our insights are relevant to physical processes in the atmosphere of Venus and its evolution.

  4. Travelling waves for a Frenkel-Kontorova chain

    NASA Astrophysics Data System (ADS)

    Buffoni, Boris; Schwetlick, Hartmut; Zimmer, Johannes

    2017-08-01

    In this article, the Frenkel-Kontorova model for dislocation dynamics is considered, where the on-site potential consists of quadratic wells joined by small arcs, which can be spinodal (concave) as commonly assumed in physics. The existence of heteroclinic waves-making a transition from one well of the on-site potential to another-is proved by means of a Schauder fixed point argument. The setting developed here is general enough to treat such a Frenkel-Kontorova chain with smooth (C2) on-site potential. It is shown that the method can also establish the existence of two-transition waves for a piecewise quadratic on-site potential.

  5. High-Temperature Expansions for Frenkel-Kontorova Model

    NASA Astrophysics Data System (ADS)

    Takahashi, K.; Mannari, I.; Ishii, T.

    1995-02-01

    Two high-temperature series expansions of the Frenkel-Kontorova (FK) model are investigated: the high-temperature approximation of Schneider-Stoll is extended to the FK model having the density ρ ≠ 1, and an alternative series expansion in terms of the modified Bessel function is examined. The first six-order terms for both expansions in free energy are explicitly obtained and compared with Ishii's approximation of the transfer-integral method. The specific heat based on the expansions is discussed by comparing with those of the transfer-integral method and Monte Carlo simulation.

  6. The ground state of the Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Babushkin, A. Yu.; Abkaryan, A. K.; Dobronets, B. S.; Krasikov, V. S.; Filonov, A. N.

    2016-09-01

    The continual approximation of the ground state of the discrete Frenkel-Kontorova model is tested using a symmetric algorithm of numerical simulation. A "kaleidoscope effect" is found, which means that the curves representing the dependences of the relative extension of an N-atom chain vary periodically with increasing N. Stairs of structural transitions for N ≫ 1 are analyzed by the channel selection method with the approximation N = ∞. Images of commensurable and incommensurable structures are constructed. The commensurable-incommensurable phase transitions are stepwise.

  7. First-principles study of Frenkel pair recombination in tungsten

    NASA Astrophysics Data System (ADS)

    Qin, Shi-Yao; Jin, Shuo; Li, Yu-Hao; Zhou, Hong-Bo; Zhang, Ying; Lu, Guang-Hong

    2017-02-01

    The recombination of one Frenkel pair in tungsten has been investigated through first-principles simulation. Two different recombination types have been identified: instantaneous and thermally activated. The small recombination barriers for thermally activated recombination cases indicate that recombination can occur easily with a slightly increased temperature. For both of the two recombination types, recombination occurs through the self-interstitial atom moving towards the vacancy. The recombination process can be direct or through replacement sequences, depending on the vertical distance between the vacancy and the <1 1 1> line of self-interstitial atom pair.

  8. Lubricated friction in Frenkel-Kontorova model between incommensurate surfaces

    NASA Astrophysics Data System (ADS)

    Yang, Yang; Wang, Cang-Long; Duan, Wen-Shan; Chen, Jian-Min; Yang, Lei

    2015-01-01

    We study the superlubricity in the generalized Frenkel-Kontorova model. Each particle of the top layer is driven by external dc driving force Fext . When the ratios of the three inherent length scales of the system are chosen to be the Golden Mean (a / b = 233 / 144, c / a = 144 / 89), we find that there exists a critical interparticle interaction strength above which the static friction force Fsu of the top layer is zero. And Fsu could easily flow into the low friction with existing the lubricant layer.

  9. Behavior of Supercritical Fluids across the "Frenkel Line".

    PubMed

    Bryk, T; Gorelli, F A; Mryglod, I; Ruocco, G; Santoro, M; Scopigno, T

    2017-09-29

    The "Frenkel line" (FL), the thermodynamic locus where the time for a particle to move by its size equals the shortest transverse oscillation period, has been proposed as a boundary between recently discovered liquid-like and gas-like regions in supercritical fluids. We report a simulation study of isothermal supercritical neon in a range of densities intersecting the FL. Specifically, structural properties and single-particle and collective dynamics are scrutinized to unveil the onset of any anomalous behavior at the FL. We find that (i) the pair distribution function smoothly evolves across the FL displaying medium-range order, (ii) low-frequency transverse excitations are observed below the "Frenkel frequency", and (iii) the high-frequency shear modulus does not vanish even for low-density fluids, indicating that positive sound dispersion characterizing the liquid-like region of the supercritical state is unrelated to transverse dynamics. These facts critically undermine the definition of the FL and its significance for any relevant partition of the supercritical phase.

  10. Lowest energy Frenkel and charge transfer exciton intermixing in one-dimensional copper phthalocyanine molecular lattice

    NASA Astrophysics Data System (ADS)

    Bondarev, I. V.; Popescu, A.; Younts, R. A.; Hoffman, B.; McAfee, T.; Dougherty, D. B.; Gundogdu, K.; Ade, H. W.

    2016-11-01

    We report the results of the combined experimental and theoretical studies of the low-lying exciton states in crystalline copper phthalocyanine. We derive the eigen energy spectrum for the two lowest intramolecular Frenkel excitons coupled to the intermolecular charge transfer exciton state and compare it with temperature dependent optical absorption spectra measured experimentally, to obtain the parameters of the Frenkel-charge-transfer exciton intermixing. The two Frenkel exciton states are spaced apart by 0.26 eV, and the charge transfer exciton state is 50 meV above the lowest Frenkel exciton. Both Frenkel excitons are strongly mixed with the charge transfer exciton, showing the coupling constant 0.17 eV which agrees with earlier experimental measurements. These results can be used for the proper interpretation of the physical properties of crystalline phthalocyanines.

  11. Experimental evidence of the Frenkel line in supercritical neon

    NASA Astrophysics Data System (ADS)

    Prescher, C.; Fomin, Yu. D.; Prakapenka, V. B.; Stefanski, J.; Trachenko, K.; Brazhkin, V. V.

    2017-04-01

    Recent research suggests that the supercritical state consists of liquidlike and gaslike states where particle dynamics and key system properties are qualitatively different. We report experimental evidence of the structural crossover in supercritical neon at pressure and temperature conditions significantly exceeding the critical point values: 250 Pc and 6.6 Tc . The experimental results show a crossover of the medium-range order structure evidenced by the change of the structure factor with pressure. We also observe the crossover of the short-range order structure indicated by changes in the coordination number. The relative width of the crossover is fairly narrow and is smaller than 10-12% in pressure and temperature. By comparing our experimental results with molecular dynamics simulations, we suggest that the observed crossover can be attributed to the Frenkel line and discuss the relationship between the structural crossover and qualitative changes of dynamical and thermodynamic properties of supercritical matter.

  12. Swelling Mechanisms of UO2 Lattices with Defect Ingrowths

    PubMed Central

    Günay, Seçkin D.

    2015-01-01

    The swelling that occurs in uranium dioxide as a result of radiation-induced defect ingrowth is not fully understood. Experimental and theoretical groups have attempted to explain this phenomenon with various complex theories. In this study, experimental lattice expansion and lattice super saturation were accurately reproduced using a molecular dynamics simulation method. Based on their resemblance to experimental data, the simulation results presented here show that fission induces only oxygen Frenkel pairs while alpha particle irradiation results in both oxygen and uranium Frenkel pair defects. Moreover, in this work, defects are divided into two sub-groups, obstruction type defects and distortion type defects. It is shown that obstruction type Frenkel pairs are responsible for both fission- and alpha-particle-induced lattice swelling. Relative lattice expansion was found to vary linearly with the number of obstruction type uranium Frenkel defects. Additionally, at high concentrations, some of the obstruction type uranium Frenkel pairs formed diatomic and triatomic structures with oxygen ions in their octahedral cages, increasing the slope of the linear dependence. PMID:26244777

  13. Nitrogen vacancy, self-interstitial diffusion, and Frenkel-pair formation/dissociation in B 1 TiN studied by ab initio and classical molecular dynamics with optimized potentials

    NASA Astrophysics Data System (ADS)

    Sangiovanni, D. G.; Alling, B.; Steneteg, P.; Hultman, L.; Abrikosov, I. A.

    2015-02-01

    We use ab initio and classical molecular dynamics (AIMD and CMD) based on the modified embedded-atom method (MEAM) potential to simulate diffusion of N vacancy and N self-interstitial point defects in B 1 TiN. TiN MEAM parameters are optimized to obtain CMD nitrogen point-defect jump rates in agreement with AIMD predictions, as well as an excellent description of Ti Nx(˜0.7 defect diffusion pathways, activation energies, attempt frequencies, and diffusion coefficients as a function of temperature. In addition, the MD simulations presented in this paper reveal an unanticipated atomistic process, which controls the spontaneous formation of N self-interstitial/N vacancy (NI/NV) pairs (Frenkel pairs), in defect-free TiN. This entails that the N lattice atom leaves its bulk position and bonds to a neighboring N lattice atom. In most cases, Frenkel-pair NI and NV recombine within a fraction of ns; ˜50% of these processes result in the exchange of two nitrogen lattice atoms (N - NExc) . Occasionally, however, Frenkel-pair N-interstitial atoms permanently escape from the anion vacancy site, thus producing unpaired NI and NV point defects.

  14. Emergent friction in two-dimensional Frenkel-Kontorova models

    NASA Astrophysics Data System (ADS)

    Norell, Jesper; Fasolino, Annalisa; de Wijn, Astrid S.

    2016-08-01

    Simple models for friction are typically one-dimensional, but real interfaces are two-dimensional. We investigate the effects of the second dimension on static and dynamic friction by using the Frenkel-Kontorova (FK) model. We study the two most straightforward extensions of the FK model to two dimensions and simulate both the static and dynamic properties. We show that the behavior of the static friction is robust and remains similar in two dimensions for physically reasonable parameter values. The dynamic friction, however, is strongly influenced by the second dimension and the accompanying additional dynamics and parameters introduced into the models. We discuss our results in terms of the thermal equilibration and phonon dispersion relations of the lattices, establishing a physically realistic and suitable two-dimensional extension of the FK model. We find that the presence of additional dissipation channels can increase the friction and produces significantly different temperature dependence when compared to the one-dimensional case. We also briefly study the anisotropy of the dynamic friction and show highly nontrivial effects, including that the friction anisotropy can lead to motion in different directions depending on the value of the initial velocity.

  15. Interview with Daan Frenkel, Boltzmann Medallist 2016 : Simulating soft matter through the lens of statistical mechanics.

    PubMed

    Frenkel, Daan; Louët, Sabine

    2016-06-01

    Daan Frenkel has been awarded the most important prize in the field of statistical mechanics, the 2016 Boltzmann Medal, named after the Austrian physicist and philosopher Ludwig Boltzmann. The award recognises Frenkel's seminal contributions to the statistical-mechanical understanding of the kinetics, self-assembly and phase behaviour of soft matter. The honour recognises Frenkel's highly creative large-scale simulations of soft matter capable of explaining the self-assembly of complex macromolecular systems, colloidal and biomolecular systems. Frenkel is Professor of Theoretical Chemistry at the University of Cambridge, UK and has been Editor in Chief of EPJE between 2010 and 2014. The award will be given to both Frenkel and his French colleague Yves Pomeau, during the StatPhys Conference on 20th July 2016 in Lyon, France. In this interview with Sabine Louët, Frenkel gives his views on statistical physics, which has become more relevant than ever for interdisciplinary research. He also offers some pearls of wisdom for the next generation Statistical Mechanics experts.

  16. [On the vestiges of Heinrich Frenkel (1860-1931)--Pioneer of neurorehabilitation. Annotation to the cover picture].

    PubMed

    Danek, A

    2004-04-01

    Heinrich Simon Frenkel or Frenkel-Heiden(1860-1931) is almost completely forgotten as a founder of neurorehabilitation and little is known about his life. Frenkel's main contribution, "The treatment of tabetic ataxia by meansof systematic exercise: An exposition of the principles and practice of compensatory movement treatment", was reprinted several times in English (1902, 1905, 1917). Frenkel exerted great influence among his contemporaries, including his direct student Otfrid Foerster (1873-1941) who became one of the most important neurologists and neurosurgeons of the 20th century. A floor mosaic, preserved in the historic building of the "Medizinische Poliklinik" in Munich, is an exact copy of the pattern of traces that Frenkel had published in 1900 for proprioceptive gait exercises in tabes dorsalis.

  17. The Poole-Frenkel effect in 6H-SiC diode characteristics

    SciTech Connect

    Pelaz, L.; Orantes, J.L.; Vincente, J.; Bailon, L.A.; Barbolla, J. . Dept. de Electricidad y Electronica)

    1994-04-01

    The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. The authors have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC.

  18. Study of the Effect of Ellipsoidal Shape on the Kern and Frenkel Patch Model

    NASA Astrophysics Data System (ADS)

    Nguyen, Thienbao; Gunton, James; Rickman, Jeffrey

    In their work on the self-assembly of complex structures, Glotzer and Solomon (Nature Materials 6, 557 - 562 (2007)) identified both interaction and shape anisotropy as two of several means to build complex structures. Advances in fabricating materials and new insights into protein biology have revealed the importance of these types of interactions. The Kern and Frenkel (J. Chem. Phys. 118, 9882 (2003) model of hard spheres carrying interaction patches of various sizes has been used extensively to describe interaction anisotropies important in protein phase transitions. However their model did not also account for shape anisotropy. We studied the role of both shape and interaction anisotropy by applying N=2 and N=4 attractive Kern and Frenkel patches with an interaction range to hard ellipsoids with various aspect ratios and patch coverages. Following Kern and Frenkel, we studied the liquid-liquid phase separation of our particles using a Monte Carlo simulation. We found the critical temperatures for our model using the approximate law of rectilinear diameter and compared them with the original results of Kern and Frenkel. We found that the critical temperatures increased both with aspect ratio and percent coverage. G Harold and Leila Y Mathers Foundation.

  19. Molecular Dynamics Simulation of Defect Production in Collision Cascades in Zircon

    SciTech Connect

    Devanathan, Ram; Corrales, Louis R.; Weber, William J.; Chartier, Alain; Meis, Constantin

    2005-01-01

    Defect production in collision cascades in zircon has been examined by molecular dynamics simulations using a partial charge model combined with the Ziegler-Biersack-Littmark potential. U, Zr, Si and O recoils with energies ranging from 250 eV to 5 keV were simulated in the NVE ensemble. To obtain good statistics, 5-10 cascades in randomly chosen directions were simulated for each ion and energy. The damage consists of mainly Si and O Frenkel pairs, a smaller number of Zr Frenkel pairs, and Zr on Si antisite defects. Defect production, interstitial clustering, ion beam mixing and Si-O-Si polymerization increase with PKA mass and energy.

  20. Blood pressure and heart rate adjustment following acute Frenkel's ambulatory exercise in chronic hemiparetics stroke survivors: a comparative study.

    PubMed

    Isa, Lawal; Abubakar, Aliyu; Rufa'i, Ahmad; Mukadas, Akindele

    2014-12-01

    Frenkel's ambulatory activity has been routinely employed by physiotherapists for rehabilitation of gait coordination, however, its immediate influence on blood pressure and heart rate has not been investigated. To investigate the acute effect of Frenkel's ambulatory activity on blood pressure and heart rate of chronic hemiparetic stroke survivors. Using a comparative study design, 60 chronic hemiparetic stroke survivors of varying onset of stroke, ≤6, >6-11 and ≥12 months were subjected to a 2-minute Frenkel's ambulatory activity on marked footsteps (from standard adult described footsteps). Participants were assessed for both blood pressure and heart rate before and after the Frenkel's ambulatory activity. Blood pressure and heart rate significantly increased (p<0.05) following Frenkel's ambulatory activity in all the 3 categories of stroke onset above baseline. However, there was no significant difference (p>0.05) across the onsets in both blood pressure and heart rate responses. The outcome of this study indicated that Frenkel's ambulatory activity has the propensity to increase blood pressure and heart rate of hemiparetic stroke survivors irrespective of the onset of stroke. We recommend a pre, within and post-activity monitoring of stroke survivors while subjecting them to Frenkel's ambulatory activity.

  1. Poole-Frenkel mobility field dependence in molecularly doped polymers revisited

    NASA Astrophysics Data System (ADS)

    Tyutnev, A. P.; Saenko, V. S.

    2017-02-01

    We have examined the Poole-Frenkel mobility field dependence in a molecularly doped polymer (MDP) both experimentally and theoretically trying to separate two physically different contributions to this phenomenon, one constituting a real physical effect and the other arising from the fact that the charge carrier transport in MDP is not fully equilibrated. The former is ascribed to the influence of an electric field on the transport process itself affecting at least one of the model parameters. The latter should be associated with the mobility field effect under conditions when neither model parameter is field sensitive. Numerical calculations have been used to achieve their deconvolution. On the experimental front, we relied on the time of flight technique specifically modified to suit this task. Both approaches show that the contribution of the second (operational) field effect in the investigated MDP is quite appreciable. This result is compared with the traditional interpretation of the Poole-Frenkel effect in molecularly doped polymers.

  2. Controlling chaotic solitons in Frenkel-Kontorova chains by disordered driving forces.

    PubMed

    Chacón, Ricardo; Martínez, Pedro J

    2007-06-01

    We discuss a general mechanism explaining the taming effect of phase disorder in external forces on chaotic solitons in damped, driven, Frenkel-Kontorova chains. We deduce analytically an effective random equation of motion governing the dynamics of the soliton center of mass for which we obtain numerically the regions in the control parameter space where chaotic solitons are suppressed. We find that such predictions are in excellent agreement with results of computer simulations of the original Frenkel-Kontorova chains. We show theoretically how such a fundamental mechanism explains recent numerical results concerning extended chaos in arrays of coupled pendula [S. F. Brandt, Phys. Rev. Lett. 96, 034104 (2006)10.1103/PhysRevLett.96.034104].

  3. An analytic mapping of oligomer potential energy surfaces to an effective Frenkel model

    SciTech Connect

    Binder, Robert; Römer, Sarah E-mail: burghardt@chemie.uni-frankfurt.de; Wahl, Jan; Burghardt, Irene E-mail: burghardt@chemie.uni-frankfurt.de

    2014-07-07

    While the use of Frenkel-type models for semiconducting polymer assemblies and related molecular aggregates is well established, the direct parametrization of such models based on electronic structure data is attempted less frequently. In this work, we develop a systematic mapping procedure which is adapted to J-type and H-type homo-aggregate systems. The procedure is based upon the analytic solution of an inverse eigenvalue problem for an effective Frenkel Hamiltonian with nearest-neighbor couplings. Vibronic interactions are included for both site-local and site-correlated modes. For illustration, an application is presented to the excited-state ab initio potential energy surfaces (PESs) of an oligothiophene octamer. The procedure performs a pointwise mapping of the PESs of oligomers of arbitrary chain length n, provided that the electronic ground state and any two of the n lowest adiabatic states of the excitonic manifold of interest are known. These three states are reproduced exactly by the procedure while the remaining n − 2 states of the excitonic manifold can be predicted. Explicit conditions are derived permitting to verify whether a given data set is compatible with the effective Frenkel model under study.

  4. An analytic mapping of oligomer potential energy surfaces to an effective Frenkel model.

    PubMed

    Binder, Robert; Römer, Sarah; Wahl, Jan; Burghardt, Irene

    2014-07-07

    While the use of Frenkel-type models for semiconducting polymer assemblies and related molecular aggregates is well established, the direct parametrization of such models based on electronic structure data is attempted less frequently. In this work, we develop a systematic mapping procedure which is adapted to J-type and H-type homo-aggregate systems. The procedure is based upon the analytic solution of an inverse eigenvalue problem for an effective Frenkel Hamiltonian with nearest-neighbor couplings. Vibronic interactions are included for both site-local and site-correlated modes. For illustration, an application is presented to the excited-state ab initio potential energy surfaces (PESs) of an oligothiophene octamer. The procedure performs a pointwise mapping of the PESs of oligomers of arbitrary chain length n, provided that the electronic ground state and any two of the n lowest adiabatic states of the excitonic manifold of interest are known. These three states are reproduced exactly by the procedure while the remaining n - 2 states of the excitonic manifold can be predicted. Explicit conditions are derived permitting to verify whether a given data set is compatible with the effective Frenkel model under study.

  5. First-principles study of point defects in CePO4 monazite

    NASA Astrophysics Data System (ADS)

    Yi, Yong; Zhao, Xiaofeng; Teng, Yuancheng; Bi, Beng; Wang, Lili; Wu, Lang; Zhang, Kuibao

    2016-12-01

    CePO4 monazite is an important radiation-resistant material that may act as a potential minor actinides waste form. Here, we present the results of the calculations for the basic radiation defect modellings in CePO4 crystals, along with the examination of their defect formation energies and effect of the defect concentrations. This study focused on building a fully-relaxed CePO4 model with the step iterative optimization from the DFT-GGA calculations using the VASP and CASTEP databases. The results show that the Frenkel defect configuration resulting from the center interstitials has a lower energy when compared to two adjacent orthophosphate centers (the saddle point position). High formation energies were found for all the types of intrinsic Frenkel and vacancy defects. The formation energies conform to the following trend (given in the decreasing order of energy): Ce Frenkel (12.41 eV) > O Frenkel (11.02 eV) > Ce vacancy (9.09 eV) > O vacancy (6.69 eV). We observed almost no effect from the defect concentrations on the defect formation energies.

  6. From simplicity to complexity: The Many-faceted Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Hu, Bambi

    2003-03-01

    The Frenkel-Kontorova (FK) model is an old model first proposed in 1938. It describes a chain of atoms connected by springs in the presence of an external potential. This deceptively simple model however exhibits very rich and complex behaviors. The FK model has found applications in many physical systems such as adsorbed monolayers, Josephson junctions, charge density waves, magnetic spirals, tribilogy and DNA. In this talk we will report our recent studies of the many aspects of the FK model: statics, dynamics, heat conduction, and quantum behavior.

  7. GENERAL: Application of Two-Dimensional Frenkel-Kontorova Model to Nanotribology

    NASA Astrophysics Data System (ADS)

    Wang, Cang-Long; Duan, Wen-Shan; Yang, Yang; Chen, Jian-Min

    2010-07-01

    The dry friction force between two contacting surface layers is studied. The upper layer is arranged on a two-dimensional square lattice and driven by an external driving force. The lower layer is approximated by a two-dimensional periodic substrate potential. This model, usually called two-dimensional Frenkel-Kontorova model, is applied to study the friction forces in this paper. The behaviors of different substrate potential strongly affect the static friction force. It is found that the system has strong anisotropic character. The possibility to obtain superlubricity is suggested.

  8. Investigation of superlubricity in a two-dimensional Frenkel-Kontorova model with square lattice symmetry

    NASA Astrophysics Data System (ADS)

    Wang, Cang-Long; Duan, Wen-Shan; Hong, Xue-Ren; Chen, Jian-Min

    2008-10-01

    A two-dimensional Frenkel-Kontorova model with a square symmetry substrate potential for a square lattice layer driven by an external driving force with an arbitrary direction α and an arbitrary misfit angle θ between upper and lower layers is presented in this paper. The effects of the system parameters have been investigated. The application of our results to the tribology is discussed and the dependence of the static friction force on the system parameters is studied. How to make the material with superlubricity is suggested.

  9. Many-body quantum dynamics by adiabatic path-integral molecular dynamics: Disordered Frenkel Kontorova models

    NASA Astrophysics Data System (ADS)

    Krajewski, Florian R.; Müser, Martin H.

    2005-07-01

    The spectral density of quantum mechanical Frenkel Kontorova chains moving in disordered, external potentials is investigated by means of path-integral molecular dynamics. If the second moment of the embedding potential is well defined (roughness exponent H=0), there is one regime in which the chain is pinned (large masses m of chain particles) and one in which it is unpinned (small m). If the embedding potential can be classified as a random walk on large length scales ( H=1/2), then the chain is always pinned irrespective of the value of m. For H=1/2, two phonon-like branches appear in the spectra.

  10. Single-file mobility of water-like fluid in a generalized Frenkel-Kontorova model.

    PubMed

    Ternes, Patricia; Mendoza-Coto, Alejandro; Salcedo, Evy

    2017-07-21

    In this work, we used a generalized Frenkel-Kontorova model to study the mobility of water molecules inside carbon nanotubes with small radius at low temperatures. Our simulations show that the mobility of confined water decreases monotonically increasing the amplitude of the substrate potential at fixed commensurations. On the other hand, the mobility of the water molecules shows a non-monotonic behavior when varying the commensuration. This result indicates that the mobility of the confined fluid presents different behavior regimes depending on the amplitude of the water-nanotube interaction. In order to qualitatively understand these results, we study analytically the driven Frenkel-Kontorova model at finite temperatures. This analysis allows us to obtain the curves of the mobility versus commensurations, at fixed substrate potentials. Such curves show the existence of three regimes of mobility behavior as a function of the commensuration ratio. Additionally, our study indicates a nontrivial and strong dependence of the mobility with a quantity that can be interpreted as an effective amplitude of the substrate potential, depending on the bare amplitude of the substrate potential, the commensuration ratio, and temperature.

  11. Theory of the J-band: From the Frenkel exciton to charge transfer

    NASA Astrophysics Data System (ADS)

    Egorov, Vladimir V.

    2009-08-01

    This review concerns the current status of the theory of formation of the so-called J-band (Jelley, Scheibe, 1936), an abnormally narrow, high-intensity, red-shifted optical absorption band arising from the aggregation of polymethine dyes. Two opposite approaches to explaining the physical nature of the J-band are given special attention. In the first of these, the old one based on Frenkel's statistical exciton model, the specific structure of the dye is considered irrelevant, and the J-band is explained by assuming that the quickly moving Frenkel exciton acts to average out the quasistatic disorder in electronic transition energies of molecules in the linear J-aggregate (Knapp, 1984). In the second approach, on the contrary, the specific structure of the dye (the existence of a quasilinear polymethine chain) is supposed to be very important. This new approach is based on a new theory of charge transfer. The explanation of the J-band here is that an elementary charge transfer along the J-aggregate's chromophore is dynamically pumped by the chaotic reorganization of nuclei in the nearby environment at a resonance between electronic and nuclear movements-when the motion of nuclei being reorganized is only weakly chaotic (Egorov, 2001).

  12. Supercritical Grüneisen parameter and its universality at the Frenkel line

    NASA Astrophysics Data System (ADS)

    Wang, L.; Dove, M. T.; Trachenko, K.; Fomin, Yu. D.; Brazhkin, V. V.

    2017-07-01

    We study the thermomechanical properties of matter under extreme conditions deep in the supercritical state, at temperatures exceeding the critical one by up to four orders of magnitude. We calculate the Grüneisen parameter γ and find that on isochores it decreases with temperature from 3 to 1, depending on the density. Our results indicate that from the perspective of thermomechanical properties, the supercritical state is characterized by a wide range of γ 's which includes solidlike values—an interesting finding in view of the common perception of the supercritical state as being an intermediate state between gases and liquids. We rationalize this result by considering the relative weights of oscillatory and diffusive components of the supercritical system below the Frenkel line. We also find that γ is nearly constant at the Frenkel line above the critical point and explain this universality in terms of the pressure and temperature scaling of system properties along the lines where particle dynamics changes qualitatively.

  13. Single-file mobility of water-like fluid in a generalized Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Ternes, Patricia; Mendoza-Coto, Alejandro; Salcedo, Evy

    2017-07-01

    In this work, we used a generalized Frenkel-Kontorova model to study the mobility of water molecules inside carbon nanotubes with small radius at low temperatures. Our simulations show that the mobility of confined water decreases monotonically increasing the amplitude of the substrate potential at fixed commensurations. On the other hand, the mobility of the water molecules shows a non-monotonic behavior when varying the commensuration. This result indicates that the mobility of the confined fluid presents different behavior regimes depending on the amplitude of the water-nanotube interaction. In order to qualitatively understand these results, we study analytically the driven Frenkel-Kontorova model at finite temperatures. This analysis allows us to obtain the curves of the mobility versus commensurations, at fixed substrate potentials. Such curves show the existence of three regimes of mobility behavior as a function of the commensuration ratio. Additionally, our study indicates a nontrivial and strong dependence of the mobility with a quantity that can be interpreted as an effective amplitude of the substrate potential, depending on the bare amplitude of the substrate potential, the commensuration ratio, and temperature.

  14. Point defects and magnetic properties of neutron irradiated MgO single crystal

    NASA Astrophysics Data System (ADS)

    Cao, Mengxiong; Ma, Yaru; Wang, Xingyu; Ma, Chunlin; Zhou, Weiping; Wang, Xiaoxiong; Tan, Weishi; Du, Jun

    2017-05-01

    (100)-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID). The reciprocal space mappings (RSMs) of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

  15. Coherent structures in the ground state of the quantum Frenkel-Kontorova model

    SciTech Connect

    Berman, G.P.; Bulgakov, E.N. Kirensky Institute of Physics, Research Educational Center for Nonlinear Processes at Krasnoyarsk Technical University, Theoretical Department at Krasnoyarsk State University, 660036, Krasnoyarsk ); Campbell, D.K. )

    1994-03-15

    We study the quantum ground state of the Frenkel-Kontorova model in the strongly nonlinear'' regime in which in the corresponding classical limit the coordinates of the atoms are distributed on Cantori.'' We identify (many) quasidegenerate configurations that contribute to the quantum ground state. When the characteristic quantum and classical energy scales are roughly equal (the intermediate'' quantum regime), we find, consistent with earlier numerical studies, that the standard map'' determining the coordinates in the classical ground state is renormalized to an effective sawtooth'' map, which determines the expectation values of the coordinates in the quantum ground state. We also discuss the dynamics of the model and estimate the characteristic time for various quantum tunneling effects.

  16. Spectral densities for Frenkel exciton dynamics in molecular crystals: A TD-DFTB approach

    NASA Astrophysics Data System (ADS)

    Plötz, Per-Arno; Megow, Jörg; Niehaus, Thomas; Kühn, Oliver

    2017-02-01

    Effects of thermal fluctuations on the electronic excitation energies and intermonomeric Coulomb couplings are investigated for a perylene-tetracarboxylic-diimide crystal. To this end, time dependent density functional theory based tight binding (TD-DFTB) in the linear response formulation is used in combination with electronic ground state classical molecular dynamics. As a result, a parametrized Frenkel exciton Hamiltonian is obtained, with the effect of exciton-vibrational coupling being described by spectral densities. Employing dynamically defined normal modes, these spectral densities are analyzed in great detail, thus providing insight into the effect of specific intramolecular motions on excitation energies and Coulomb couplings. This distinguishes the present method from approaches using fixed transition densities. The efficiency by which intramolecular contributions to the spectral density can be calculated is a clear advantage of this method as compared with standard TD-DFT.

  17. Elliptic algebra, Frenkel-Kac construction and root of unity limit

    NASA Astrophysics Data System (ADS)

    Itoyama, H.; Oota, T.; Yoshioka, R.

    2017-09-01

    We argue that the level-1 elliptic algebra Uq, p(\\widehat{g}) is a dynamical symmetry realized as a part of 2d/5d correspondence where the Drinfeld currents are the screening currents to the q-Virasoro/W block in the 2d side. For the case of Uq, p(\\widehat{sl}(2)) , the level-1 module has a realization by an elliptic version of the Frenkel-Kac construction. The module admits the action of the deformed Virasoro algebra. In a rth root of unity limit of p with q2 → 1 , the {Z}r -parafermions and a free boson appear and the value of the central charge that we obtain agrees with that of the 2d coset CFT with para-Virasoro symmetry, which corresponds to the 4d N=2 SU(2) gauge theory on {R}^4/{Z}r .

  18. External pumping of hybrid nanostructures in microcavity with Frenkel and Wannier-Mott excitons

    NASA Astrophysics Data System (ADS)

    Dubovskiy, O. A.; Agranovich, V. M.

    2016-09-01

    The exciton-exciton interaction in hybrid nanostructures with resonating Frenkel and Wannier-Mott excitons was investigated in many publications. In microcavity the hybrid nanostructures can be exposed to different types of optical pumping, the most common one being pumping through one of the microcavity side. However, not investigated and thus never been discussed the hybrid excitons generation by pumping of confined quantum wells from the side of empty microcavity without nanostructures in a wave guided configuration. Here, we consider the hybrid excitations in cavity with organic and inorganic quantum wells and with different types of pumping from external source. The frequency dependence for intensity of excitations in hybrid structure is also investigated. The results may be used for search of most effective fluorescence and relaxation processes. The same approach may be used when both quantum wells are organic or inorganic.

  19. Spectral densities for Frenkel exciton dynamics in molecular crystals: A TD-DFTB approach.

    PubMed

    Plötz, Per-Arno; Megow, Jörg; Niehaus, Thomas; Kühn, Oliver

    2017-02-28

    Effects of thermal fluctuations on the electronic excitation energies and intermonomeric Coulomb couplings are investigated for a perylene-tetracarboxylic-diimide crystal. To this end, time dependent density functional theory based tight binding (TD-DFTB) in the linear response formulation is used in combination with electronic ground state classical molecular dynamics. As a result, a parametrized Frenkel exciton Hamiltonian is obtained, with the effect of exciton-vibrational coupling being described by spectral densities. Employing dynamically defined normal modes, these spectral densities are analyzed in great detail, thus providing insight into the effect of specific intramolecular motions on excitation energies and Coulomb couplings. This distinguishes the present method from approaches using fixed transition densities. The efficiency by which intramolecular contributions to the spectral density can be calculated is a clear advantage of this method as compared with standard TD-DFT.

  20. Grover-like search via a Frenkel-exciton trapping mechanism

    SciTech Connect

    Thilagam, A.

    2010-03-15

    We propose the physical implementation of a Grover-like search problem by means of Frenkel exciton trapping at a shallow isotopic impurity against a background of competing mechanisms. The search, culminating at the impurity molecule, designated the 'winner' site, is marked by its enhanced interaction with acoustic phonons at low temperatures. The quantum search proceeds with the assistance of an oracle-like exciton-phonon interaction that addresses only the impurity site via the Dyson propagator within the Green's function formalism. The optimum parameters of a graph lattice with long-range intersite interactions required to trap the exciton in the fastest time are determined, and estimates of error rates for the naphthalene-doped organic system are evaluated. We extend the analysis of the quantum search to a fluctuating long-range interacting cycle (LRIC) graph-lattice system.

  1. Friction phenomena in a two-dimensional Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Lin, Mai-Mai; Duan, Wen-Shan; Chen, Jian-Min

    2010-02-01

    By using the molecular dynamic simulation method with a fourth-order Runge-Kutta algorithm, a two-dimensional dc- and ac-driven Frenkel-Kontorova (FK) model with a square symmetry substrate potential for a square lattice layer has been investigated in this paper. For this system, the effects of many different parameters on the average velocity and the static friction force have been studied. It is found that not only the amplitude and frequency of ac-driven force, but also the direction of the external driving force and the misfit angle between two layers have some strong influences on the static friction force. It can be concluded that the superlubricity phenomenon appears easily with a larger ac amplitude and lower ac frequency for some special direction of the external force and misfit angle.

  2. Bidirectional negative differential thermal resistance phenomenon and its physical mechanism in the Frenkel-Kontorova lattices

    SciTech Connect

    Jianqiang, Zhang; Linru, Nie Chongyang, Chen; Xinyu, Zhang

    2016-07-15

    Thermal conduction of the Frenkel-Kontorova (FK) lattices with interfacial coupling is investigated numerically. The results indicate that: (i) For appropriate lattice periods, as the system is symmetric, a bidirectional negative differential thermal resistance (NDTR) phenomenon will appear. If the system is asymmetric, the bidirectional NDTR is gradually converted into an unidirectional NDTR. (ii) The bidirectional NDTR phenomenon effect also depends on the period of the FK lattice as the other parameters remains unchanged. With the increment of the lattice period, the bidirectional NDTR will gradually disappear. (iii) From a stochastic dynamics point of view, thermal transport properties of the system are determined by the competition between the two types of thermal conduction: one comes from the collusion between atoms, the other is due to the elastic coupling between atoms. For the smaller lattice periods, the former type of thermal conduction occupies the dominating position and the NDTR effect will appear.

  3. Water adsorption constrained Frenkel-Halsey-Hill adsorption activation theory: Montmorillonite and illite

    NASA Astrophysics Data System (ADS)

    Hatch, Courtney D.; Greenaway, Ann L.; Christie, Matthew J.; Baltrusaitis, Jonas

    2014-04-01

    Fresh mineral aerosol has recently been found to be effective cloud condensation nuclei (CCN) and contribute to the number of cloud droplets in the atmosphere due to the effect of water adsorption on CCN activation. The work described here uses experimental water adsorption measurements on Na-montmorillonite and illite clay to determine empirical adsorption parameters that can be used in a recently derived theoretical framework (Frenkel-Halsey-Hill Activation Theory, FHH-AT) that accounts for the effect of water adsorption on CCN activation. Upon fitting the Frenkel-Halsey-Hill (FHH) adsorption model to water adsorption measurements, we find FHH adsorption parameters, AFHH and BFHH, to be 98 ± 22 and 1.79 ± 0.11 for montmorillonite and 75 ± 17 and 1.77 ± 0.11 for illite, respectively. The AFHH and BFHH values obtained from water adsorption measurements differ from values reported previously determined by applying FHH-AT to CCN activation measurements. Differences in FHH adsorption parameters were attributed to different methods used to obtain them and the hydratable nature of the clays. FHH adsorption parameters determined from water adsorption measurements were then used to calculate the critical super-saturation (sc) for CCN activation using FHH-AT. The relationship between sc and the dry particle diameter (Ddry) gave CCN activation curve exponents (xFHH) of -0.61 and -0.64 for montmorillonite and illite, respectively. The xFHH values were slightly lower than reported previously for mineral aerosol. The lower exponent suggests that the CCN activity of hydratable clays is less sensitive to changes in Ddry and the hygroscopicity parameter exhibits a broader variability with Ddry compared to more soluble aerosols. Despite the differences in AFHH, BFHH and xFHH, the FHH-AT derived CCN activities of montmorillonite and illite are quite similar to each other and in excellent agreement with experimental CCN measurements resulting from wet-generated clay aerosol

  4. Water adsorption constrained Frenkel-Halsey-Hill adsorption activation theory: Montmorillonite and illite clays

    NASA Astrophysics Data System (ADS)

    Hatch, C. D.; Greenaway, A.; Christie, M. J.; Baltrusaitis, J.

    2013-12-01

    Recently, fresh, unprocessed mineral aerosol has been found to contribute to the number of available cloud condensation nuclei (CCN) and cloud droplets in the atmosphere due to the effect of water adsorption on CCN activation. The work described here uses experimental water adsorption measurements on montmorillonite and illite clay to determine empirical adsorption parameters for a recently derived theoretical framework (Frenkel-Halsey-Hill Activation Theory, FHH-AT) used to calculate CCN activities of clay minerals. Upon fitting the Frenkel-Halsey-Hill (FHH) adsorption model to experimental water adsorption measurements, we find FHH adsorption parameters, AFHH and BFHH, to be 98×22 and 1.79×0.11 for Na-montmorillonite and 75×17 and 1.77×0.11 for illite, respectively. The AFHH and BFHH values obtained for these clays are significantly different from FHH adsorption parameters derived from CCN activation measurements reported previously for similar clay minerals. Differences in FHH adsorption parameters were attributed to the different approaches used, the hydratable nature of the clays and the relative difficulty in measuring CCN activation of hydratable clays due to relatively long adsorption and desorption equilibration times. However, despite these differences, the calculated CCN activities of montmorillonite and illite are quite similar and are in excellent agreement with experimental CCN activation measurements reported previously for similar clays. The different FHH adsorption parameters, however, translate to lower sc-Ddry CCN activation curve exponents (xFHH = -0.61 and -0.64 for montmorillonite and illite, respectively) than have been reported previously. The lower exponent suggests that the CCN activity of hydratable clay aerosol is less sensitive to changes in dry particle diameter (Ddry) and the hygroscopicity parameter exhibits a broader variability with Ddry compared to more soluble aerosols. This study illustrates that FHH-AT using adsorption

  5. On the possibility of extending the Noro-Frenkel generalized law of correspondent states to nonisotropic patchy interactions.

    PubMed

    Foffi, Giuseppe; Sciortino, Francesco

    2007-08-23

    Colloidal systems (and protein solutions) are often characterized by attractive interactions whose ranges are much smaller than the particle size. When this is the case and the interaction is spherical, systems obey a generalized law of correspondent states (GLCS), first proposed by Noro and Frenkel (Noro, M. G.; Frenkel, D. J. Chem. Phys. 2000, 113, 2941). The thermodynamic properties become insensitive to the details of the potential, depending only on the value of the second virial coefficient B2 and the density rho. The GLCS does not generically hold for the case of nonspherical potentials. In this Letter, we suggest that when particles interact via short-ranged small-angular amplitude patchy interactions (so that the condition of only one bond per patch is fulfilled), it is still possible to generalize the GLCS close to the liquid-gas critical point.

  6. Lattice vibrations in the Frenkel-Kontorova model. I. Phonon dispersion, number density, and energy

    SciTech Connect

    Meng, Qingping; Wu, Lijun; Welch, David O.; Zhu, Yimei

    2015-06-17

    We studied the lattice vibrations of two inter-penetrating atomic sublattices via the Frenkel-Kontorova (FK) model of a linear chain of harmonically interacting atoms subjected to an on-site potential, using the technique of thermodynamic Green's functions based on quantum field-theoretical methods. General expressions were deduced for the phonon frequency-wave-vector dispersion relations, number density, and energy of the FK model system. In addition, as the application of the theory, we investigated in detail cases of linear chains with various periods of the on-site potential of the FK model. Some unusual but interesting features for different amplitudes of the on-site potential of the FK model are discussed. In the commensurate structure, the phonon spectrum always starts at a finite frequency, and the gaps of the spectrum are true ones with a zero density of modes. In the incommensurate structure, the phonon spectrum starts from zero frequency, but at a non-zero wave vector; there are some modes inside these gap regions, but their density is very low. In our approximation, the energy of a higher-order commensurate state of the one-dimensional system at a finite temperature may become indefinitely close to the energy of an incommensurate state. This finding implies that the higher-order incommensurate-commensurate transitions are continuous ones and that the phase transition may exhibit a “devil's staircase” behavior at a finite temperature.

  7. Lattice vibrations in the Frenkel-Kontorova model. I. Phonon dispersion, number density, and energy

    DOE PAGES

    Meng, Qingping; Wu, Lijun; Welch, David O.; ...

    2015-06-17

    We studied the lattice vibrations of two inter-penetrating atomic sublattices via the Frenkel-Kontorova (FK) model of a linear chain of harmonically interacting atoms subjected to an on-site potential, using the technique of thermodynamic Green's functions based on quantum field-theoretical methods. General expressions were deduced for the phonon frequency-wave-vector dispersion relations, number density, and energy of the FK model system. In addition, as the application of the theory, we investigated in detail cases of linear chains with various periods of the on-site potential of the FK model. Some unusual but interesting features for different amplitudes of the on-site potential of themore » FK model are discussed. In the commensurate structure, the phonon spectrum always starts at a finite frequency, and the gaps of the spectrum are true ones with a zero density of modes. In the incommensurate structure, the phonon spectrum starts from zero frequency, but at a non-zero wave vector; there are some modes inside these gap regions, but their density is very low. In our approximation, the energy of a higher-order commensurate state of the one-dimensional system at a finite temperature may become indefinitely close to the energy of an incommensurate state. This finding implies that the higher-order incommensurate-commensurate transitions are continuous ones and that the phase transition may exhibit a “devil's staircase” behavior at a finite temperature.« less

  8. Strain waves, earthquakes, slow earthquakes, and afterslip in the framework of the Frenkel-Kontorova model.

    PubMed

    Gershenzon, N I; Bykov, V G; Bambakidis, G

    2009-05-01

    The one-dimensional Frenkel-Kontorova (FK) model, well known from the theory of dislocations in crystal materials, is applied to the simulation of the process of nonelastic stress propagation along transform faults. Dynamic parameters of plate boundary earthquakes as well as slow earthquakes and afterslip are quantitatively described, including propagation velocity along the strike, plate boundary velocity during and after the strike, stress drop, displacement, extent of the rupture zone, and spatiotemporal distribution of stress and strain. The three fundamental speeds of plate movement, earthquake migration, and seismic waves are shown to be connected in framework of the continuum FK model. The magnitude of the strain wave velocity is a strong (almost exponential) function of accumulated stress or strain. It changes from a few km/s during earthquakes to a few dozen km per day, month, or year during afterslip and interearthquake periods. Results of the earthquake parameter calculation based on real data are in reasonable agreement with measured values. The distributions of aftershocks in this model are consistent with the Omori law for temporal distribution and a 1/r for the spatial distributions.

  9. Experimental Study of Spectral Properties of a Frenkel-Kontorova System

    NASA Astrophysics Data System (ADS)

    Lucci, M.; Badoni, D.; Merlo, V.; Ottaviani, I.; Salina, G.; Cirillo, M.; Ustinov, A. V.; Winkler, D.

    2015-09-01

    We report on microwave emission from linear parallel arrays of underdamped Josephson junctions, which are described by the Frenkel-Kontorova (FK) model. Electromagnetic radiation is detected from the arrays when biased on current singularities (steps) appearing at voltages Vn=Φ0(n c ¯ /L ) , where Φ0=2.07 ×10-15 Wb is the magnetic flux quantum, and c ¯, L , and n are, respectively, the speed of light in the transmission line embedding the array, L its physical length, and n an integer. The radiation, detected at fundamental frequency c ¯ /2 L when biased on different singularities, indicates shuttling of bunched 2 π kinks (magnetic flux quanta). Resonance of flux-quanta motion with the small-amplitude oscillations induced in the arrays gives rise to fine structures in the radiation spectrum, which are interpreted on the basis of the FK model describing the resonance. The impact of our results on design and performances of new digital circuit families is discussed.

  10. Impurity modes in Frenkel exciton systems with dipolar interactions and cubic symmetry.

    PubMed

    Avgin, I; Huber, D L

    2013-04-28

    We introduce a continuum model for impurity modes of Frenkel excitons in fully occupied face-centered and body-centered cubic lattices with dipole-dipole interactions and parallel moments. In the absence of impurities, the model reproduces the small-k behavior found in numerical calculations of dipolar lattice sums. The exciton densities of states near the upper and lower band edges are calculated and compared with the corresponding results for a random array of dipoles. The Green function obtained with the continuum model, together with a spherical approximation to the Brillouin zone, is used to determine the conditions for the formation of a localized exciton mode associated with a shift in the transition energy of a single chromophore. The dependence of the local mode energy on the magnitude of the shift is ascertained. The formation of impurity bands at high concentrations of perturbed sites is investigated using the coherent potential approximation. The contribution of the impurity bands to the optical absorption is calculated in the coherent potential approximation. The locations of the optical absorption peaks of the dipolar system are shown to depend on the direction of propagation of the light relative to the dipolar axis, a property that is maintained in the presence of short-range interactions.

  11. Interaction between water and defective silica surfaces

    SciTech Connect

    Chen Yunwen; Cheng Haiping

    2011-03-21

    We use the density functional theory method to study dry (1 x 1) {alpha}-quartz (0001) surfaces that have Frenkel-like defects such as oxygen vacancy and oxygen displacement. These defects have distinctively different effects on the water-silica interface depending on whether the adsorbent is a single water molecule, a cluster, or a thin film. The adsorption energies, bonding energies, and charge transfer or redistributions are analyzed, from which we find that the existence of a defect enhances the water molecule and cluster surface interaction by a large amount, but has little or even negative effect on water thin film-silica surface interaction. The origin of the weakening in film-surface systems is the collective hydrogen bonding that compromises the water-surface interaction in the process of optimizing the total energy. For clusters on surfaces, the lowest total energy states lower both the bonding energy and the adsorption energy.

  12. Light-induced defects in hybrid lead halide perovskite

    NASA Astrophysics Data System (ADS)

    Sharia, Onise; Schneider, William

    One of the main challenges facing organohalide perovskites for solar application is stability. Solar cells must last decades to be economically viable alternatives to traditional energy sources. While some causes of instability can be avoided through engineering, light-induced defects can be fundamentally limiting factor for practical application of the material. Light creates large numbers of electron and hole pairs that can contribute to degradation processes. Using ab initio theoretical methods, we systematically explore first steps of light induced defect formation in methyl ammonium lead iodide, MAPbI3. In particular, we study charged and neutral Frenkel pair formation involving Pb and I atoms. We find that most of the defects, except negatively charged Pb Frenkel pairs, are reversible, and thus most do not lead to degradation. Negative Pb defects create a mid-gap state and localize the conduction band electron. A minimum energy path study shows that, once the first defect is created, Pb atoms migrate relatively fast. The defects have two detrimental effects on the material. First, they create charge traps below the conduction band. Second, they can lead to degradation of the material by forming Pb clusters.

  13. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    NASA Astrophysics Data System (ADS)

    Schroeder, Herbert

    2015-06-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

  14. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    SciTech Connect

    Schroeder, Herbert

    2015-06-07

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating

  15. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    SciTech Connect

    Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  16. Comparing the effect of Cawthorne-Cooksey and Frenkel exercises on balance in patients with multiple sclerosis: a randomized controlled trial.

    PubMed

    Afrasiabifar, Ardashir; Karami, Fatemeh; Najafi Doulatabad, Shahla

    2017-06-01

    To evaluate the effect of Cawthorne-Cooksey and Frenkel exercises on balance in patients with multiple sclerosis. It was a three-arm parallel randomized controlled trial study. Outpatient clinic. Patients with multiple sclerosis. Subjects in the intervention groups completed a 12-week program consisted of Cawthorne-Cooksey or Frenkel exercises. The control group only received routine care. The outcome measure was the Berg Balance Scale. Seventy-two patients completed the study. At the end of the intervention, there was a statistically significant improvement in Berg Balance Scale in the Cawthorne-Cooksey group ( n = 24) in comparison with the other two groups ( P = 0.001). In the Frenkel group ( n = 23), the improvement was statistically greater than the changes in the control group ( n = 25), but it did not appear to be clinically significant. The Berg Balance Scale score increased to 8.9 in the Cawthorne-Cooksey group and 2.3 in the Frenkel group, while it decreased to 1.2 in the control group. When comparing inter-group changes, Berg Balance Scale showed significant improvements in favor of the Cawthorne-Cooksey group after the intervention ( P < 0.05). This study demonstrated that in comparison with Frenkel and the control groups, a program of Cawthorne-Cooksey exercise is more effective in improving balance in patients with multiple sclerosis.

  17. Defect processes in Be12X (X = Ti, Mo, V, W)

    NASA Astrophysics Data System (ADS)

    Jackson, M. L.; Burr, P. A.; Grimes, R. W.

    2017-08-01

    The stability of intrinsic point defects in Be12X intermetallics (where X  =  Ti, V, Mo or W) are predicted using density functional theory simulations and discussed with respect to fusion energy applications. Schottky disorder is found to be the lowest energy complete disorder process, closely matched by Be Frenkel disorder in the cases of Be12V and Be12Ti. Antitisite and X Frenkel disorder are of significantly higher energy. Small clusters of point defects including Be divacancies, Be di-interstitials and accommodation of the X species on two Be sites were considered. Some di-interstitial, divacancy and X2Be combinations exhibit negative binding enthalpy (i.e. clustering is favourable), although this is orientationally dependent. None of the Be12X intermetallics are predicted to exhibit significant non-stoichiometry, ruling out non-stoichiometry as a mechanism for accommodating Be depletion due to neutron transmutation.

  18. The role of point defects in PbS, PbSe and PbTe: a first principles study

    NASA Astrophysics Data System (ADS)

    Li, Wun-Fan; Fang, Chang-Ming; Dijkstra, Marjolein; van Huis, Marijn A.

    2015-08-01

    Intrinsic defects are of central importance to many physical and chemical processes taking place in compound nanomaterials, such as photoluminescence, accommodation of off-stoichiometry and cation exchange. Here, the role of intrinsic defects in the above mentioned processes inside rock salt (RS) lead chalcogenide systems PbS, PbSe and PbTe (PbX) was studied systematically using first principles density functional theory. Vacancy, interstitial, Schottky and Frenkel defects were considered. Rock salt PbO was included for comparison. The studied physical properties include defect formation energy, local geometry relaxation, Bader charge analysis, and electronic structure. The defect formation energies show that monovacancy defects and Schottky defects are favoured over interstitial and Frenkel defects. Schottky dimers, where the cation vacancy and anion vacancy are adjacent to each other, have the lowest defect formation energies at 1.27 eV, 1.29 eV and 1.21 eV for PbS, PbSe and PbTe, respectively. Our results predict that a Pb monovacancy gives rise to a shallow acceptor state, while an X vacancy generates a deep donor state, and Schottky defects create donor-acceptor pairs inside the band gap. The surprisingly low formation energy of Schottky dimers suggests that they may play an important role in cation exchange processes, in contrast to the current notion that only single point defects migrate during cation exchange.

  19. The role of point defects in PbS, PbSe and PbTe: a first principles study.

    PubMed

    Li, Wun-Fan; Fang, Chang-Ming; Dijkstra, Marjolein; van Huis, Marijn A

    2015-09-09

    Intrinsic defects are of central importance to many physical and chemical processes taking place in compound nanomaterials, such as photoluminescence, accommodation of off-stoichiometry and cation exchange. Here, the role of intrinsic defects in the above mentioned processes inside rock salt (RS) lead chalcogenide systems PbS, PbSe and PbTe (PbX) was studied systematically using first principles density functional theory. Vacancy, interstitial, Schottky and Frenkel defects were considered. Rock salt PbO was included for comparison. The studied physical properties include defect formation energy, local geometry relaxation, Bader charge analysis, and electronic structure. The defect formation energies show that monovacancy defects and Schottky defects are favoured over interstitial and Frenkel defects. Schottky dimers, where the cation vacancy and anion vacancy are adjacent to each other, have the lowest defect formation energies at 1.27 eV, 1.29 eV and 1.21 eV for PbS, PbSe and PbTe, respectively. Our results predict that a Pb monovacancy gives rise to a shallow acceptor state, while an X vacancy generates a deep donor state, and Schottky defects create donor-acceptor pairs inside the band gap. The surprisingly low formation energy of Schottky dimers suggests that they may play an important role in cation exchange processes, in contrast to the current notion that only single point defects migrate during cation exchange.

  20. REVIEWS OF TOPICAL PROBLEMS: Theory of the J-band: from the Frenkel exciton to charge transfer

    NASA Astrophysics Data System (ADS)

    Egorov, V. V.; Alfimov, M. V.

    2007-10-01

    This review concerns the current status of the theory of formation of the so-called J-band (Jelley, Scheibe, 1936), an abnormally narrow, high-intensity, red-shifted optical absorption band arising from the aggregation of polymethine dyes. Two opposite approaches to explaining the physical nature of the J-band are given special attention. In the first of these, the old one based on Frenkel's statistical exciton model, the specific structure of the dye is considered irrelevant, and the J-band is explained by assuming that the quickly moving Frenkel exciton acts to average out the quasistatic disorder in electronic transition energies of molecules in the linear J-aggregate (Knapp, 1984). In the second approach, on the contrary, the specific structure of the dye (the existence of a quasilinear polymethine chain) is supposed to be very important. This new approach is based on a new theory of charge transfer. The explanation of the J-band here is that an elementary charge transfer along the J-aggregate's chromophore is dynamically pumped by the chaotic reorganization of nuclei in the nearby environment at a resonance between electronic and nuclear movements — when the motion of nuclei being reorganized is only weakly chaotic (Egorov, 2001).

  1. Optical spectroscopy and system-bath interactions in molecular aggregates with full configuration interaction Frenkel exciton model

    NASA Astrophysics Data System (ADS)

    Seibt, Joachim; Sláma, Vladislav; Mančal, Tomáš

    2016-12-01

    Standard application of the Frenkel exciton model neglects resonance coupling between collective molecular aggregate states with different number of excitations. These inter-band coupling terms are, however, of the same magnitude as the intra-band coupling between singly excited states. We systematically derive the Frenkel exciton model from quantum chemical considerations, and identify it as a variant of the configuration interaction method. We discuss all non-negligible couplings between collective aggregate states, and provide compact formulae for their calculation. We calculate absorption spectra of molecular aggregate of carotenoids and identify significant band shifts as a result of inter-band coupling. The presence of inter-band coupling terms requires renormalization of the system-bath coupling with respect to standard formulation, but renormalization effects are found to be weak. We present detailed discussion of molecular dimer and calculate its time-resolved two-dimensional Fourier transformed spectra to find weak but noticeable effects of peak amplitude redistribution due to inter-band coupling.

  2. Plane-wave pseudopotential study of point defects in uranium dioxide

    NASA Astrophysics Data System (ADS)

    Crocombette, J. P.; Jollet, F.; Nga, L. Thien; Petit, T.

    2001-09-01

    A study on uranium and oxygen point defects in uranium dioxide using the ab initio plane-wave pseudopotential method in the local density approximation of the density functional theoretical framework is presented. Norm conserving pseudopotentials are used to describe oxygen and uranium atoms. The uranium pseudopotential is specifically described. Its validity is ascertained thanks to a detailed structural study of uranium dioxide and of three phases of metallic uranium (fcc, bcc, and α phase). The free energies of formation of both intrinsic (Frenkel pairs and Schottky defect) and extrinsic (single vacancies or interstitials) defects are calculated. The obtained values form a reliable set of numerical data that are analyzed in the framework of the point defect model which is commonly used to assess defect concentrations in uranium dioxide and their variation with stoichiometry. From the obtained results, the ability of the point defect model to accurately reproduce defect concentrations in uranium dioxide is discussed.

  3. Comment on "Lattice vibrations in the Frenkel-Kontorova model. I. Phonon dispersion, number density, and energy"

    NASA Astrophysics Data System (ADS)

    Novaco, Anthony D.

    2015-11-01

    A recent publication [Q. Meng, L. Wu, D. O. Welch, and Y. Zhu, Phys. Rev. B 91, 224305 (2015), 10.1103/PhysRevB.91.224305] examines the quantum normal modes of the Frenkel-Kontorova chain. The authors compare their results to those of an older work [A. D. Novaco, Phys. Rev. B 22, 1645 (1980), 10.1103/PhysRevB.22.1645], attributing the differences to limitations in the numerical analysis of that 1980 paper. We show here that it is not numerical limitations that cause the differences between the two papers, and we argue that the cause of these differences resides with the approaches used in the modeling.

  4. The effect of ac-driven force on superlubricity in a two-dimensional Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Lin, Mai-Mai

    2010-08-01

    By using the molecular dynamic simulation method with a fourth-order Runge-Kutta algorithm, a two-dimensional dc- and ac-driven Frenkel-Kontorova model with a square symmetry substrate potential for a square lattice layer has been investigated in this paper. For this system, the effects of many different parameters on the static friction force have been studied in detail. It was found that not only the amplitude and frequency of the ac-driven force, but also the direction of dc- and ac-driven forces and the misfit angle between two layers have a strong influence on the static friction force. This indicated that the phenomenon of superlubricity appears easily with larger ac amplitude and smaller ac frequency for some special direction of the external driving force and misfit angle.

  5. Modèle de diélectrique associant les effets Poole-Frenkel et Maxwell-Wagner

    NASA Astrophysics Data System (ADS)

    Pillonnet, Alain; Ongaro, Roger; Garoum, Mohammed

    1992-06-01

    The model presented here combines Poole-Frenkel (PF) and Maxwell-Wagner (MW) effects to determine the equivalent conductivity σ of a plane double-layered dielectric. PF effect is introduced first under its usual form (Boltzmann statistics), and then under a more general form (Fermi-Dirac statistics). The curves log (σ) versus the electric field (sqrt{F}) generally display one or two linear parts, with the low-field slopes always larger than the high-field ones. These slopes are dependent on the layer's thickness ration and may greatly differ from slopes associated with PF effect in an homogeneous dielectric. The computer simulations show that this behaviour results from the fact that the potential can dominate successively in each layer. Le modèle présenté associe les effets Poole-Frenkel (PF) et Maxwell-Wagner (MW) dans la détermination de la conductivité équivalente σ d'un diélectrique plan à deux couches. L'effet PF y est introduit sous sa forme usuelle (statistique de Boltzmann), puis sous une forme plus générale (statistique de Fermi-Dirac). Les courbes log σ en fonction du champ électrique (sqrt{F}) présentent généralement une ou deux parties linéaires, la pente en bas champs étant toujours supérieure à la pente en hauts champs. Ces pentes sont fonctions du rapport des épaisseurs des couches et peuvent différer beaucoup des pentes relevant de l'effet PF dans un diélectrique homogène. Les simulations numériques montrent que ce comportement résulte du fait que le potentiel peut être successivement prépondérant dans chacune des couches.

  6. First-principles DFT+U modeling of defect behaviors in anti-ferromagnetic uranium mononitride

    SciTech Connect

    Lan, Jian-Hui; Zhao, Zi-Chen; Wu, Qiong; Zhao, Yu-Liang; Shi, Wei-Qun; Chai, Zhi-Fang

    2013-12-14

    A series of point defects in uranium mononitride (UN) have been studied by first-principles DFT+U calculations. The influence of intrinsic defects on the properties of UN was explored by considering the anti-ferromagnetic (AFM) order along the [001] direction. Our results show that all the point defects lead to obvious volume swelling of UN crystal. Energetically, the interstitial nitrogen defect is the most favorable one among single-point defects in UN crystal with the formation energy of 4.539 eV, while the N-Frenkel pair becomes the most preferable one among double-point defects. The AFM order induces obvious electron spin polarization of uranium towards neighboring uranium atoms with opposite spin orientations in UN crystal.

  7. Birth Defects

    MedlinePlus

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  8. Point defects in thorium nitride: A first-principles study

    NASA Astrophysics Data System (ADS)

    Pérez Daroca, D.; Llois, A. M.; Mosca, H. O.

    2016-11-01

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  9. First-Principles Study of Defects in GaN, AlN and Their Alloys

    DTIC Science & Technology

    2010-08-31

    studied the similar type of pairs in GaN, i.e. Gai -VGa. These types of defect complexes are called Frenkel pairs which are believed to form when the...defects have been carried out.[17-21] In our previous program, we studied the GaGa i V− pairs in GaN. We found that Gai can occur in 3+, 2+, and 1...charge states, depending on the Fermi energy of the sample. VGa can occur in 3−, 2−, 1−, and neutral charge states. Because Gai and VGa have

  10. Energetics of intrinsic point defects in ZrSiO{sub 4}

    SciTech Connect

    Pruneda, J.M.; Artacho, Emilio

    2005-03-01

    Using first principles calculations we have studied the formation energies, electron and hole affinities, and electronic levels of intrinsic point defects in zircon. The atomic structures of charged interstitials, vacancies, Frenkel pairs, and antisite defects are obtained. The limit of high concentration of point defects, relevant for the use of this material in nuclear waste immobilization, was studied with a variable lattice relaxation that can simulate the swelling induced by radiation damage. The limit of low concentration of defects is simulated with larger cells and fixed lattice parameters. Using known band offset values at the interface of zircon with silicon, we analyze the foreseeable effect of the defects on the electronic properties of zircon used as gate in metal-oxide-semiconductor devices.

  11. Coherent Dynamics of Mixed Frenkel and Charge-Transfer Excitons in Dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene Thin Films: The Importance of Hole Delocalization.

    PubMed

    Fujita, Takatoshi; Atahan-Evrenk, Sule; Sawaya, Nicolas P D; Aspuru-Guzik, Alán

    2016-04-07

    Charge-transfer states in organic semiconductors play crucial roles in processes such as singlet fission and exciton dissociation at donor/acceptor interfaces. Recently, a time-resolved spectroscopy study of dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene (DNTT) thin films provided evidence for the formation of mixed Frenkel and charge-transfer excitons after the photoexcitation. Here, we investigate optical properties and excitation dynamics of the DNTT thin films by combining ab initio calculations and a stochastic Schrödinger equation. Our theory predicts that the low-energy Frenkel exciton band consists of 8-47% CT character. The quantum dynamics simulations show coherent dynamics of Frenkel and CT states in 50 fs after the optical excitation. We demonstrate the role of charge delocalization and localization in the mixing of CT states with Frenkel excitons as well as the role of their decoherence.

  12. Devil's staircase and the absence of chaos in the dc- and ac-driven overdamped Frenkel-Kontorova model

    NASA Astrophysics Data System (ADS)

    Sokolović, I.; Mali, P.; Odavić, J.; Radošević, S.; Medvedeva, S. Yu.; Botha, A. E.; Shukrinov, Yu. M.; Tekić, J.

    2017-08-01

    The devil's staircase structure arising from the complete mode locking of an entirely nonchaotic system, the overdamped dc+ac driven Frenkel-Kontorova model with deformable substrate potential, was observed. Even though no chaos was found, a hierarchical ordering of the Shapiro steps was made possible through the use of a previously introduced continued fraction formula. The absence of chaos, deduced here from Lyapunov exponent analyses, can be attributed to the overdamped character and the Middleton no-passing rule. A comparative analysis of a one-dimensional stack of Josephson junctions confirmed the disappearance of chaos with increasing dissipation. Other common dynamic features were also identified through this comparison. A detailed analysis of the amplitude dependence of the Shapiro steps revealed that only for the case of a purely sinusoidal substrate potential did the relative sizes of the steps follow a Farey sequence. For nonsinusoidal (deformed) potentials, the symmetry of the Stern-Brocot tree, depicting all members of particular Farey sequence, was seen to be increasingly broken, with certain steps being more prominent and their relative sizes not following the Farey rule.

  13. Quantum dynamics in the highly discrete, commensurate Frenkel Kontorova model: A path-integral molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Krajewski, Florian R.; Müser, Martin H.

    2005-03-01

    The commensurate Frenkel Kontorova (FK) model is studied using path-integral molecular dynamics (PIMD). We focus on the highly discrete case, in which the embedding potential has a much greater maximum curvature than the harmonic potential connecting two particles in the FK chain. When efficient sampling methods are used, the dynamical interpretation of adiabatic PIMD appears to represent quite accurately the true time correlation functions of this highly correlated many-body system. We have found that the discrete, quantum FK model shows different behavior than its continuum version. The spectral density does not show the characteristic ω-2Θ(ω-ωc) cusp of the continuum solution in the pinned phase (m>mc). We also identify a dynamical quantum hysteresis in addition to the regular classical hysteresis when an external force is applied to the FK chain. In the unpinned phase (m⩽mc), we find a linear response damping coefficient which is finite and only weakly dependent on temperature T at small values of T.

  14. Recombination radius of a Frenkel pair and capture radius of a self-interstitial atom by vacancy clusters in bcc Fe

    SciTech Connect

    Nakashima, Kenichi; Stoller, Roger E.; Xu, Haixuan

    2015-01-01

    The recombination radius of a Frenkel pair is a fundamental parameter for the object kinetic Monte Carlo (OKMC) and mean field rate theory (RT) methods that are used to investigate irradiation damage accumulation in neutron irradiated nuclear materials. The recombination radius in bcc Fe has been studied both experimentally and numerically, however there is no general consensus about its value. The detailed atomistic processes of recombination also remain uncertain. Values from 1:0a₀ to 3:3a₀ have been employed as a recombination radius in previous studies using OKMC and RT. The recombination process of a Frenkel pair is investigated at the atomic level using the self-evolved atomistic kinetic Monte Carlo (SEAKMC) method in this paper. SEAKMC calculations reveal that a self-interstitial atom recombines with a vacancy in a spontaneous reaction from several nearby sites following characteristic pathways. The recombination radius of a Frenkel pair is estimated to be 2.26a₀ by taking the average of the recombination distances from 80 simulation cases. This value agrees well with the experimental estimate. In addition, we apply these procedures to the capture radius of a self-interstitial atom by a vacancy cluster. The capture radius is found to gradually increase with the size of the vacancy cluster. The fitting curve for the capture radius is obtained as a function of the number of vacancies in the cluster.

  15. Recombination radius of a Frenkel pair and capture radius of a self-interstitial atom by vacancy clusters in bcc Fe

    DOE PAGES

    Nakashima, Kenichi; Stoller, Roger E.; Xu, Haixuan

    2015-01-01

    The recombination radius of a Frenkel pair is a fundamental parameter for the object kinetic Monte Carlo (OKMC) and mean field rate theory (RT) methods that are used to investigate irradiation damage accumulation in neutron irradiated nuclear materials. The recombination radius in bcc Fe has been studied both experimentally and numerically, however there is no general consensus about its value. The detailed atomistic processes of recombination also remain uncertain. Values from 1:0a₀ to 3:3a₀ have been employed as a recombination radius in previous studies using OKMC and RT. The recombination process of a Frenkel pair is investigated at the atomicmore » level using the self-evolved atomistic kinetic Monte Carlo (SEAKMC) method in this paper. SEAKMC calculations reveal that a self-interstitial atom recombines with a vacancy in a spontaneous reaction from several nearby sites following characteristic pathways. The recombination radius of a Frenkel pair is estimated to be 2.26a₀ by taking the average of the recombination distances from 80 simulation cases. This value agrees well with the experimental estimate. In addition, we apply these procedures to the capture radius of a self-interstitial atom by a vacancy cluster. The capture radius is found to gradually increase with the size of the vacancy cluster. The fitting curve for the capture radius is obtained as a function of the number of vacancies in the cluster.« less

  16. Recombination radius of a Frenkel pair and capture radius of a self-interstitial atom by vacancy clusters in bcc Fe.

    PubMed

    Nakashima, Kenichi; Stoller, Roger E; Xu, Haixuan

    2015-08-26

    The recombination radius of a Frenkel pair is a fundamental parameter for the object kinetic Monte Carlo (OKMC) and mean field rate theory (RT) methods that are used to investigate irradiation damage accumulation in irradiated materials. The recombination radius in bcc Fe has been studied both experimentally and numerically, however there is no general consensus about its value. The detailed atomistic processes of recombination also remain uncertain. Values from 1.0a0 to 3.3a0 have been employed as a recombination radius in previous studies using OKMC and RT. The recombination process of a Frenkel pair is investigated at the atomic level using the self-evolved atomistic kinetic Monte Carlo (SEAKMC) method in this paper. SEAKMC calculations reveal that a self-interstitial atom recombines with a vacancy in a spontaneous reaction from several nearby sites following characteristic pathways. The recombination radius of a Frenkel pair is estimated to be 2.26a0 by taking the average of the recombination distances from 80 simulation cases. In addition, we apply these procedures to the capture radius of a self-interstitial atom by a vacancy cluster. The capture radius is found to gradually increase with the size of the vacancy cluster. The fitting curve for the capture radius is obtained as a function of the number of vacancies in the cluster.

  17. Using defects to store energy in materials - a computational study.

    PubMed

    Lu, I-Te; Bernardi, Marco

    2017-06-13

    Energy storage occurs in a variety of physical and chemical processes. In particular, defects in materials can be regarded as energy storage units since they are long-lived and require energy to be formed. Here, we investigate energy storage in non-equilibrium populations of materials defects, such as those generated by bombardment or irradiation. We first estimate upper limits and trends for energy storage using defects. First-principles calculations are then employed to compute the stored energy in the most promising elemental materials, including tungsten, silicon, graphite, diamond and graphene, for point defects such as vacancies, interstitials and Frenkel pairs. We find that defect concentrations achievable experimentally (~0.1-1 at.%) can store large energies per volume and weight, up to ~5 MJ/L and 1.5 MJ/kg for covalent materials. Engineering challenges and proof-of-concept devices for storing and releasing energy with defects are discussed. Our work demonstrates the potential of storing energy using defects in materials.

  18. Trace Impurities and Radiation Defects in Optical Materials

    NASA Astrophysics Data System (ADS)

    Malovichko, Galina; Grachev, Valentin; Meyer, Martin; Munro, Mark; Pankratov, Vladimir

    2007-05-01

    Trace impurities and radiation defects lead to inevitable performance degradation of devices based on optical materials. The results of the Electron Paramagnetic Resonance (EPR) study of defects in as grown and irradiated single crystals are reported. Among investigated optical materials are LiNbO3, Li2B4O7, KTiOPO4 etc. Crystals from different vendors or grown by different ways have different concentrations of non-controlled impurities and, as a result, different physical properties, including radiation resistance. Intrinsic defects (vacancies and antisites), usually present in congruent non-stoichiometric crystals like lithium niobate and tantalate. Many EPR lines of non-controlled impurities were found in KTiOPO4 crystals. We found that dominating types of defects formed under visible, UV and gamma photon irradiation are centers created by defects trapped electron or hole. The neutron and high energy electron irradiation creates stable Frenkel pairs - interstitial ions and vacancies. Computer simulation of observed spectra allowed us to determine spectroscopic characteristics and models for more than dozen trace impurities and radiation defects. Obtained data about atomic defects can be used for a selection of materials suitable for various applications. To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2007.NWS07.B1.2

  19. First-principles study of point defects in thorium carbide

    NASA Astrophysics Data System (ADS)

    Pérez Daroca, D.; Jaroszewicz, S.; Llois, A. M.; Mosca, H. O.

    2014-11-01

    Thorium-based materials are currently being investigated in relation with their potential utilization in Generation-IV reactors as nuclear fuels. One of the most important issues to be studied is their behavior under irradiation. A first approach to this goal is the study of point defects. By means of first-principles calculations within the framework of density functional theory, we study the stability and formation energies of vacancies, interstitials and Frenkel pairs in thorium carbide. We find that C isolated vacancies are the most likely defects, while C interstitials are energetically favored as compared to Th ones. These kind of results for ThC, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically. For this reason, we compare with results on other compounds with the same NaCl-type structure.

  20. Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides

    NASA Astrophysics Data System (ADS)

    Dubinko, V. I.; Vainshtein, D. I.; den Hartog, H. W.

    2003-10-01

    Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects. RSDE acts in the opposite direction compared with Frenkel pair production, and it results in the radiation-induced recovery processes. In the case of alkali halides, Schottky defects can be produced as a result of the interaction of extended defects with excitons , as has been suggested by Seitz in 1954. We consider a model that takes into account excitonic mechanisms for the creation of both Frenkel and Schottky defects, and which shows that although the contribution of the latter mechanism to the production of primary defects may be small, its role in the radiation-induced evolution of microstructure can be very significant. The model is applied to describe the evolution of sodium colloids and the formation of voids in NaCl, which is followed by a sudden fracture of the material, presenting a potential problem in rock salt-based nuclear waste repositories. The temperature, dose rate and dose dependence of colloid growth in NaCl doped with different types of impurities is analyzed. We have found that colloid growth may become negative below a threshold temperature (or above a threshold dose rate), or below a certain impurity concentration , which is determined by the RSDE, that depends strongly on the type and concentration of the impurities. The results obtained with the model are compared with experimental observations.

  1. Defects and metastable structures of MgAl{sub 2}O{sub 4}

    SciTech Connect

    Chen, S.P.; Yan, M.; Grimes, R.W.; Vyas, S.; Gale, J.D.

    1995-07-01

    This paper presents calculated properties of normal and inverse spinel structures of MgAl{sub 2}O{sub 4} and of point defects in the spinel structure. These results provide information for further study of possible metastable states. Calculated properties of ``amorphous`` structure are also presented. Atomistic simulations show that in MgAl{sub 2}O{sub 4} spinel structure, the exchange of an Mg{sup 2+} ion with an Al{sup 3+} ion has the lowest energy increase, 0. 92eV/atom. The Schottky defect increases the energy by 3.71 eV/atom. Frenkel defects are difficult to form, increasing the energy at least 4.59eV/atom for the Mg{sup 2+} Frenkel defect. Proposed rock salt structure of MgAl{sub 2}O{sub 4} has smaller volume and larger Young modulus, and the amorphosu state has larger volume and smaller Young modulus than the MgAl{sub 2}O{sub 4} spinel.

  2. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

    SciTech Connect

    El-Atab, Nazek; Nayfeh, Ammar; Ozcan, Ayse; Alkis, Sabri; Okyay, Ali K.

    2014-01-06

    A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔV{sub t}) vs. programming voltage is studied with and without the silicon nanoparticles. Applying −1 V for 5 s at the gate of the memory with nanoparticles results in a ΔV{sub t} of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at −1 V programming voltage, the ΔV{sub t} is negligible. In order to get ΔV{sub t} of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔV{sub t} vs. electric field across the tunnel oxide shows square root dependence at low fields (E < 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields.

  3. Molecular Dynamics Simulation of Point Defect Accumulation in 3C-SiC

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2004-04-05

    Defect accumulation in silicon carbide has been simulated by molecular dynamics using a Brenner-type potential connected smoothly to the Ziegler-Biersack-Littmark potential. Displacement damage in 3C-SiC, which is known to consist of point defects, vacancy and interstitial clusters and anti-site defects, was modelled by introducing random displacements in the Si or C sublattice. SiC was amorphized by Si displacements at a damage level corresponding to 0.15 displacements per atom (dpa) and by C displacements at 0.25 dpa. In both cases, the damage consists of Si and C Frenkel pairs as well as anti-site defects. The results provide evidence that SiC can be amorphized by displacing C atoms exclusively and suggest that short-range disorder provides the driving force for amorphization of SiC.

  4. Defect engineering of the electronic transport through cuprous oxide interlayers

    NASA Astrophysics Data System (ADS)

    Fadlallah, Mohamed M.; Eckern, Ulrich; Schwingenschlögl, Udo

    2016-06-01

    The electronic transport through Au–(Cu2O)n–Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work.

  5. Defect engineering of the electronic transport through cuprous oxide interlayers

    PubMed Central

    Fadlallah, Mohamed M.; Eckern, Ulrich; Schwingenschlögl, Udo

    2016-01-01

    The electronic transport through Au–(Cu2O)n–Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work. PMID:27256905

  6. The Frenkel Kontorova Model

    NASA Astrophysics Data System (ADS)

    Floría, L. M.; Baesens, C.; Gómez-Gardeñes, J.

    In the preface to his monograph on the structure of Evolutionary Theory [1], the late professor Stephen Jay Gould attributes to the philosopher Immanuel Kant the following aphorism in Science Philosophy: "Percepts without concepts are blind; concepts without percepts are empty". Using with a bit of freedom these Kantian terms, one would say that a scientific model is a framework (or network) of interrelated concepts and percepts where experts build up scientific consistent explanations of a given set of observations. Good models are those which are both, conceptually simple and universal in their perceptions. Let us illustrate with examples the meaning of this statement.

  7. Comparison the effects of two types of therapeutic exercises Frenkele vs. Swiss ball on the clinical balance measures in patients with type II diabetic neuropathy.

    PubMed

    Rojhani-Shirazi, Zahra; Barzintaj, Fatemeh; Salimifard, Mohamad Reza

    2016-09-15

    The number of diabetic patients is increasing in the world. Peripheral neuropathy is the most important problem of diabetes. Neuropathy eventually leads to balance impairment which is the main cause of falling down in these patients However, not sufficient evidences available to compare different protocols for improving balance in diabetic patients. This study aimed to compare the effects of two therapeutic exercises on clinical balance measures in patients with type II diabetic peripheral neuropathy. The study was performed on 60 patients with diabetes categorized randomly into three groups: an intervention group (N=20) that received ball training exercise, another intervention group (N=20) that received Frenkel exercise and a control group (N=20) that received no interventions. Exercise training session was performed for 3 weeks. Then, clinical balance measures were computed in the three groups. Paired t-test and one-way ANOVA were used to analyze the collected data. Both types of therapeutic exercise programs significantly improved balance in single leg stance, star excursion test, and Berg balance scale test (P˂0.05) compared to the control group. Besides, this was more significant in the ball training group (P˂0.05). To improve balance in diabetic neuropathy, Swiss ball exercise is preferred compared to Frenkel training. Copyright © 2016. Published by Elsevier Ltd.

  8. Stabilization of primary mobile radiation defects in MgF2 crystals

    NASA Astrophysics Data System (ADS)

    Lisitsyn, V. M.; Lisitsyna, L. A.; Popov, A. I.; Kotomin, E. A.; Abuova, F. U.; Akilbekov, A.; Maier, J.

    2016-05-01

    Non-radiative decay of the electronic excitations (excitons) into point defects (F-H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1-50 ps with the quantum yield up to 0.2-0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF2 and <0.001% in fluorides MeF2 (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF2 crystals with a focus on the H center stabilization in the form of the interstitial F2 molecules which is supported by presented experimental data.

  9. Effect of intrinsic point defects on ferroelectric polarization behavior of SrTiO3

    NASA Astrophysics Data System (ADS)

    Klyukin, Konstantin; Alexandrov, Vitaly

    2017-01-01

    The effect of a variety of intrinsic defects and defect clusters in bulk and thin films of SrTiO3 on ferroelectric polarization and switching mechanisms is investigated by means of density-functional-theory based calculations and the Berry phase approach. Our results show that both the titanium TiSr•• and strontium SrTi'' antisite defects induce ferroelectric polarization in SrTiO3, with the TiSr•• defect causing a more pronounced spontaneous polarization and higher activation barriers of polarization reversal than SrTi''. The presence of oxygen vacancies bound to the antisite defects can either enhance or diminish polarization depending on the configuration of the defect pair, but it always leads to larger activation barriers of polarization switching as compared to the antisite defects with no oxygen vacancies. We also show that the magnitude of spontaneous polarization in SrTiO3 can be tuned by controlling the degree of Sr/Ti nonstroichiometry. Other intrinsic point defects such as Frenkel defect pairs and electron small polarons also contribute to the emergence of ferroelectric polarization in SrTiO3.

  10. Bulk, surface and point defect properties in UO2 from a tight-binding variable-charge model

    NASA Astrophysics Data System (ADS)

    Sattonnay, G.; Tétot, R.

    2013-03-01

    A tight-binding variable-charge model (SMTB-Q) has been used to calculate bulk, surface and point defect properties in uranium dioxide. It provides us with a better description of the iono-covalent oxides than classical, purely ionic models. A good agreement is found in the structural properties and cohesive energy between the model and experimental data; the charges calculated on the uranium and oxygen ions are QU = 2.804 and QO =- 1.402 respectively. The stability and relaxation of low index surfaces were evaluated: the (111) surface consistently has the lowest surface energy and the smallest surface relaxation, followed by the (110) surface and the (100) surface, in agreement with previous predictions from semi-empirical potentials and from ab initio calculations. The energy ranking of intrinsic defects is oxygen Frenkel pair < Schottky trio < uranium Frenkel pair, which is consistent with literature. The clustering energy of small vacancy clusters has been also calculated. Additionally, the atomic relaxations and the charge transfer at surfaces and around defects have been investigated. All the results obtained in the present work prove the ability of the SMTB-Q model to describe the bulk properties as well as the surface and defect properties in uranium dioxide. Finally, this model provides us with a new fundamental insight into the role played by the charge transfer in UO2 properties.

  11. Neural Tube Defects

    MedlinePlus

    ... Birth defects & other health conditions > Neural tube defects Neural tube defects E-mail to a friend Please ... this page It's been added to your dashboard . Neural tube defects (NTDs) are birth defects of the ...

  12. Monte Carlo Simulations of Defect Recovery within a 10 keV Collision Cascade in 3C-SiC

    SciTech Connect

    Rong, Zhouwen; Gao, Fei; Weber, William J.

    2007-11-26

    A kinetic lattice Monte Carlo (KLMC) model is developed to investigate the recovery and clustering of defects during annealing of a single 10 keV cascade in cubic silicon carbide. The 10 keV Si cascade is produced by molecular dynamics (MD), and a method of transferring the defects created by MD simulations to the KLMC model is developed. The KLMC model parameters are obtained from molecular dynamics simulations and ab initio calculations of defect migration, recombination and annihilation. The defects are annealed isothermally from 100 K to 1000 K in the KLMC model. Two distinct recovery stages for close Frenkel pairs are observed at about 200 and 550 K, and the growth of complex clusters is observed above 400 K. These simulation results are in good agreement with available experimental results.

  13. Congenital Defects.

    ERIC Educational Resources Information Center

    Goldman, Allen S.; And Others

    There are two general categories (not necessarily mutually exclusive) of congenital defects: (1) abnormalities that have an hereditary basis, such as single and multiple genes, or chromosomal abberration; and (2) abnormalities that are caused by nonhereditary factors, such as malnutrition, maternal disease, radiation, infections, drugs, or…

  14. Congenital Defects.

    ERIC Educational Resources Information Center

    Goldman, Allen S.; And Others

    There are two general categories (not necessarily mutually exclusive) of congenital defects: (1) abnormalities that have an hereditary basis, such as single and multiple genes, or chromosomal abberration; and (2) abnormalities that are caused by nonhereditary factors, such as malnutrition, maternal disease, radiation, infections, drugs, or…

  15. Displacement cascades and defects annealing in tungsten, Part I: Defect database from molecular dynamics simulations

    SciTech Connect

    Setyawan, Wahyu; Nandipati, Giridhar; Roche, Kenneth J.; Heinisch, Howard L.; Wirth, Brian D.; Kurtz, Richard J.

    2015-07-01

    Molecular dynamics simulations have been used to generate a comprehensive database of surviving defects due to displacement cascades in bulk tungsten. Twenty-one data points of primary knock-on atom (PKA) energies ranging from 100 eV (sub-threshold energy) to 100 keV (~780×Ed, where Ed = 128 eV is the average displacement threshold energy) have been completed at 300 K, 1025 K and 2050 K. Within this range of PKA energies, two regimes of power-law energy-dependence of the defect production are observed. A distinct power-law exponent characterizes the number of Frenkel pairs produced within each regime. The two regimes intersect at a transition energy which occurs at approximately 250×Ed. The transition energy also marks the onset of the formation of large self-interstitial atom (SIA) clusters (size 14 or more). The observed defect clustering behavior is asymmetric, with SIA clustering increasing with temperature, while the vacancy clustering decreases. This asymmetry increases with temperature such that at 2050 K (~0.5Tm) practically no large vacancy clusters are formed, meanwhile large SIA clusters appear in all simulations. The implication of such asymmetry on the long-term defect survival and damage accumulation is discussed. In addition, <100> {110} SIA loops are observed to form directly in the highest energy cascades, while vacancy <100> loops are observed to form at the lowest temperature and highest PKA energies, although the appearance of both the vacancy and SIA loops with Burgers vector of <100> type is relatively rare.

  16. Isochronal annealing study of X-ray induced defects in single- and double-walled carbon nanotubes

    SciTech Connect

    Murakami, Toshiya; Yamamoto, Yuki; Itoh, Chihiro; Kisoda, Kenji

    2013-09-21

    X-ray induced defects in single-walled (SWCNTs) and double-walled carbon nanotubes (DWCNTs) were characterized by Raman scattering spectroscopy. Frenkel defects, interstitial-vacancy pairs, were revealed to form in both SWCNTs and DWCNTs after X-ray irradiation because these defects were entirely healed by thermal annealing. In order to clarify the structure of the X-ray induced defect in SWCNT and DWCNT, isochronal-annealing experiments were performed on the irradiated samples and the activation energy for defect healing was estimated. The intensity of D band (defect induced band) on Raman spectra was used as a measure of the density of X-ray induced defects. The experimental results were in good agreement with the simulated values using second order reaction model, which indicated that the defect healing was determined by the migration energy of interstitials on the carbon layer. We also found that the activation energy for defect healing of SWCNT and DWCNT were around 0.5 eV and 0.32 eV, respectively. The X-ray induced defects in SWCNTs were more stable than those in DWCNTs. Compared these estimated activation energies to previous theoretical reports, we concluded that bridge and/or dumbbell interstitials are formed in both SWCNT and DWCNT by X-ray irradiation.

  17. Defect pair separation as the controlling step in homogeneous ice melting.

    PubMed

    Mochizuki, Kenji; Matsumoto, Masakazu; Ohmine, Iwao

    2013-06-20

    On being heated, ice melts into liquid water. Although in practice this process tends to be heterogeneous, it can occur homogeneously inside bulk ice. The thermally induced homogeneous melting of solids is fairly well understood, and involves the formation and growth of melting nuclei. But in the case of water, resilient hydrogen bonds render ice melting more complex. We know that the first defects appearing during homogeneous ice melting are pairs of five- and seven-membered rings, which appear and disappear repeatedly and randomly in space and time in the crystalline ice structure. However, the accumulation of these defects to form an aggregate is nearly additive in energy, and results in a steep free energy increase that suppresses further growth. Here we report molecular dynamics simulations of homogeneous ice melting that identify as a crucial first step not the formation but rather the spatial separation of a defect pair. We find that once it is separated, the defect pair--either an interstitial (I) and a vacancy (V) defect pair (a Frenkel pair), or an L and a D defect pair (a Bjerrum pair)--is entropically stabilized, or 'entangled'. In this state, defects with threefold hydrogen-bond coordination persist and grow, and thereby prepare the system for subsequent rapid melting.

  18. Genetic sperm defects.

    PubMed

    Chenoweth, Peter J

    2005-08-01

    Genetic sperm defects are specific sperm defects, which have been shown to have a genetic mode of transmission. Such genetic linkage, either direct or indirect, has been associated with a number of sperm defects in different species, with this number increasing with improved diagnostic capabilities. A number of sperm defects, which have proven or suspected genetic modes of transmission are discussed herein, with particular emphasis on cattle. These include: 1. Acrosome defects (knobbed, ruffled and incomplete); 2. Head defects (abnormal condensation, decapitated, round head, rolled head, nuclear crest); 3. Midpiece abnormalities ("Dag" defect, "corkscrew" defect, "pseudo-droplet" defect); 4. Tail defects ("tail stump" defect, primary ciliary dyskinesia).

  19. Interaction of defects and H in proton-irradiated GaN(Mg, H)

    SciTech Connect

    Myers, S.M.; Seager, C.H.

    2005-05-01

    Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 deg. C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H.

  20. Defect processes of M3AlC2 (M = V, Zr, Ta, Ti) MAX phases

    NASA Astrophysics Data System (ADS)

    Christopoulos, S.-R. G.; Kelaidis, N.; Chroneos, A.

    2017-08-01

    The interest on the Mn+1AXn phases (M = early transition metal; A = group 13-16 element and X = C and/or N) stems from their combination of advantageous metallic and ceramic properties. Aluminium containing 312 MAX phases in particular are deemed to enhance high-temperature oxidation resistance. In the present study, we use density functional theory calculations to study the intrinsic defect processes of M3AlC2 MAX phases (M = V, Zr, Ta, Ti). The calculations reveal that Ti3AlC2 is the more radiation tolerant 312 MAX phase considered here. In Ti3AlC2 the carbon Frenkel reaction is the lowest energy defect process with 3.17 eV. Results are discussed in view of recent experimental and theoretical results of related systems.

  1. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  2. Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials

    NASA Astrophysics Data System (ADS)

    Fedorov, A. S.; Visotin, M. A.; Kholtobina, A. S.; Kuzubov, A. A.; Mikhaleva, N. S.; Hsu, Hua Shu

    2017-10-01

    Theoretical and experimental investigations of the ferromagnetism induced by intrinsic defects inside wurtzite zinc oxide structures are performed using magnetic field-dependent circular dichroism (MCD-H), direct magnetization measurement (M-H) by superconducting quantum interference device (SQUID) as well as by generalized gradient density functional theory (GGA-DFT). To investigate localized magnetic moments of bulk material intrinsic defects - vacancies, interstitial atoms and Frenkel defects, various-size periodic supercells are calculated. It is shown that oxygen interstitial atoms (Oi) or zinc vacancies (Znv) generate magnetic moments of 1,98 и 1,26 μB respectively, however, the magnitudes are significantly reduced when the distance between defects increases. At the same time, the magnetic moments of oxygen Frenkel defects are large ( 1.5-1.8 μB) and do not depend on the distance between the defects. It is shown that the origin of the induced ferromagnetism in bulk ZnO is the extra spin density on the oxygen atoms nearest to the defect. Also dependence of the magnetization of ZnO (10 1 ̅ 0) and (0001) thin films on the positions of Oi and Znv in subsurface layers were investigated and it is shown that the magnetic moments of both defects are significantly different from the values inside bulk material. In order to check theoretical results regarding the defect induced ferromagnetism in ZnO, two thin films doped by carbon (C) and having Zn interstitials and oxygen vacancies were prepared and annealed in vacuum and air, respectively. According to the MCD-H and M-H measurements, the film, which was annealed in air, exhibits a ferromagnetic behavior, while the other does not. One can assume annealing of ZnO in vacuum should create oxygen vacancies or Zn interstitial atoms. At that annealing of the second C:ZnO film in air leads to essential magnetization, probably by annihilation of oxygen vacancies, formation of interstitial oxygen atoms or zinc vacancies

  3. Enhanced damage resistance and novel defect structure of CrFeCoNi under in situ electron irradiation

    DOE PAGES

    He, Mo -Rigen; Wang, Shuai; Jin, Ke; ...

    2016-07-25

    Defect production and growth in CrFeCoNi, a single-phase concentrated solid solution alloy, is characterized using in situ electron irradiation inside a transmission electron microscope operated at 400–1250 kV and 400 °C. All observed defects are interstitial-type, either elliptical Frank loops or polygonal (mostly rhombus) perfect loops. Both forms of loops in CrFeCoNi exhibit a sublinear power law of growth that is > 40 times slower than the linear defect growth in pure Ni. Lastly, this result shows how compositional complexity impacts the production of Frenkel pairs and the agglomeration of interstitials into loops, and, thus, enhances the radiation tolerance.

  4. Defects and mass transport in rutile-structured fluorides. I. Experiment

    SciTech Connect

    Ling, S.; Nowick, A.S. )

    1989-08-15

    A study of low-temperature dielectric relaxation of Er{sup 3+}- and Y{sup 3+}-doped MnF{sub 2} crystals in orientations both parallel and perpendicular to the tetragonal {ital c} axis shows the presence of relaxation peaks with very low activation energies {ital E}. Specifically, for both dopants, a prominent peak is found in parallel-oriented samples with {ital E}{similar to}6 meV and in perpendicular orientation with {ital E}=37 meV for Er{sup 3+} and {ital E}=46 meV for Y{sup 3+} doping. Such low {ital E} values are probably too small to be controlled by lattice migration of a defect. With the aid of computer-simulation calculations, these peaks were interpreted as resulting from a stable low-symmetry configuration of a dopant-F{sub {ital i}} pair (F{sub {ital i}} is the fluorine-ion interstitial), which allows dipole reorientation by motions involving small fractions of lattice distances. It is then concluded that the intrinsic defect in this crystal is of the anion Frenkel, and not the Schottky, type, as had been proposed earlier. Electrical-conductivity measurements on pure and doped MnF{sub 2} were then interpreted in terms of this defect model to obtain {ital H}{sub {ital f}}=3.56{plus minus}0.02 eV for the formation enthalpy of the anion Frenkel defect, {ital H}{sub {ital m}}=0.10 eV for the migration enthalpy of the F{sub {ital i}}, and {ital H}{sub {ital A}}=1.1 eV for the dopant-F{sub {ital i}} association enthalpy. The results agree well with the computer-simulation calculations given in the following paper.

  5. On energy balance and the structure of radiated waves in kinetics of crystalline defects

    NASA Astrophysics Data System (ADS)

    Sharma, Basant Lal

    2016-11-01

    Traveling waves, with well-known closed form expressions, in the context of the defects kinetics in crystals are excavated further with respect to their inherent structure of oscillatory components. These are associated with, so called, Frenkel-Kontorova model with a piecewise quadratic substrate potential, corresponding to the symmetric as well as asymmetric energy wells of the substrate, displacive phase transitions in bistable chains, and brittle fracture in triangular lattice strips under mode III conditions. The paper demonstrates that the power expended theorem holds so that the sum of rate of working and the rate of total energy flux into a control strip moving steadily with the defect equals the rate of energy sinking into the defect, in the sense of N.F. Mott. In the conservative case of the Frenkel-Kontorova model with asymmetric energy wells, this leads to an alternative expression for the mobility in terms of the energy flux through radiated lattice waves. An application of the same to the case of martensitic phase boundary and a crack, propagating uniformly in bistable chains and triangular lattice strips, respectively, is also provided and the energy release is expressed in terms of the radiated energy flux directly. The equivalence between the well-known expressions and their alternative is established via an elementary identity, which is stated and proved in the paper as the zero lemma. An intimate connection between the three distinct types of defects is, thus, revealed in the framework of energy balance, via a structural similarity between the corresponding variants of the 'zero' lemma containing the information about radiated energy flux. An extension to the dissipative models, in the presence of linear viscous damping, is detailed and analog of the zero lemma is proved. The analysis is relevant to the dynamics of dislocations, brittle cracks, and martensitic phase boundaries, besides possible applications to analogous physical contexts which are

  6. Coherent Dynamics of Mixed Frenkel and Charge-Transfer Excitons in Dinaphtho[2,3- b :2'3'- f ]thieno[3,2- b ]-thiophene Thin Films: The Importance of Hole Delocalization

    SciTech Connect

    Fujita, Takatoshi; Atahan-Evrenk, Sule; Sawaya, Nicolas P. D.; Aspuru-Guzik, Alán

    2016-04-07

    Charge-transfer states in organic semiconductors play crucial roles in processes such as singlet fission and exciton dissociation at donor/acceptor interfaces. Recently, a time-resolved spectroscopy study of dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene (DNTT) thin films provided evidence for the formation of mixed Frenkel and charge-transfer excitons after the photoexcitation. Here, we investigate optical properties and excitation dynamics of the DNTT thin films by combining ab initio calculations and a stochastic Schrödinger equation. Our theory predicts that the low-energy Frenkel exciton band consists of 8–47% CT character. The quantum dynamics simulations show coherent dynamics of Frenkel and CT states in 50 fs after the optical excitation. We demonstrate the role of charge delocalization and localization in the mixing of CT states with Frenkel excitons as well as the role of their decoherence.

  7. INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Oscillating Propagation of Kink in Nondissipative Frenkel-Kontorova Chain Due to External DC Force

    NASA Astrophysics Data System (ADS)

    Zeng, Shang-You; Tang, Yi; Ren, Xi-Mei; Zhao, De-Jiang

    2009-04-01

    We report the oscillating propagation of kink in a nondissipative Frenkel-Kontorova (FK) chain driven by external DC force, which is different from the usual propagation of localized modes with equal speed. When the kink moves in the opposite direction of the external DC force, the kink will be accelerated and the potential of the FK chain in the external force field is transformed to be the kinetic energy of the kink. If the kink reaches the boundary of the FK chain, the kink will be bounced back and moves in the opposite direction, then the kink will be decelerated gradually and the kinetic energy of the kink is transformed to be the potential of the FK chain in the external force field. If the speed of the kink reaches zero, the kink will move in the opposite direction again driven by the external DC force, and a new oscillating cycle begins. Simulation result demonstrates exactly the transformation between the kinetic energy of the kink and the potential of the FK chain in the external force field. The interesting energy exchange is induced by the special topology of kinks, and other localized modes, such as breathers and envelope solitons, have no the interesting phenomenon.

  8. Correlative plasma-surface model for metastable Cr-Al-N: Frenkel pair formation and influence of the stress state on the elastic properties

    NASA Astrophysics Data System (ADS)

    Music, Denis; Banko, Lars; Ruess, Holger; Engels, Martin; Hecimovic, Ante; Grochla, Dario; Rogalla, Detlef; Brögelmann, Tobias; Ludwig, Alfred; von Keudell, Achim; Bobzin, Kirsten; Schneider, Jochen M.

    2017-06-01

    Correlatively employing density functional theory and experiments congregated around high power pulsed magnetron sputtering, a plasma-surface model for metastable Cr0.8Al0.2N (space group Fm 3 ¯ m) is developed. This plasma-surface model relates plasma energetics with film composition, crystal structure, mass density, stress state, and elastic properties. It is predicted that N Frenkel pairs form during Cr0.8Al0.2N growth due to high-energy ion irradiation, yielding a mass density of 5.69 g cm-3 at room temperature and Young's modulus of 358-130 GPa in the temperature range of 50-700 K for the stress-free state and about 150 GPa larger values for the compressive stress of 4 GPa. Our measurements are consistent with the quantum mechanical predictions within 5% for the mass density and 3% for Young's modulus. The hypothesis of a stress-induced Young's modulus change may at least in part explain the spread in the reported elasticity data ranging from 250 to 420 GPa.

  9. Localized states in 1D Frenkel exciton systems: a comparison between infinite-range and nearest-neighbor transfer for normal and inverted bands.

    PubMed

    Avgin, I; Huber, D L

    2009-10-29

    We investigate localized states in one-dimensional Frenkel exciton systems that are created by a shift in the optical transition frequency of a single chromophore. In this paper, we focus on localized states lying below the exciton band that can act as exciton traps. A comparison is made between systems with infinite-range (r(-n), n = 2, 3, ...) transfer and those with nearest-neighbor (n = infinity) transfer. A distinction is also made between normal bands (minimum exciton energy at k = 0) and inverted bands (minimum energy at k = pi). The position of the localized state relative to the bottom of the band is calculated as a function of the shift in the single-chromophore transition frequency. The nature of the localized state is displayed in calculations of the participation ratio and the effective oscillator strength. Similarities and differences in localized states between normal and inverted band systems and between infinite-range and nearest-neighbor transfer are analyzed.

  10. From square-well to Janus: Improved algorithm for integral equation theory and comparison with thermodynamic perturbation theory within the Kern-Frenkel model

    SciTech Connect

    Giacometti, Achille; Gögelein, Christoph; Lado, Fred; Sciortino, Francesco; Ferrari, Silvano

    2014-03-07

    Building upon past work on the phase diagram of Janus fluids [F. Sciortino, A. Giacometti, and G. Pastore, Phys. Rev. Lett. 103, 237801 (2009)], we perform a detailed study of integral equation theory of the Kern-Frenkel potential with coverage that is tuned from the isotropic square-well fluid to the Janus limit. An improved algorithm for the reference hypernetted-chain (RHNC) equation for this problem is implemented that significantly extends the range of applicability of RHNC. Results for both structure and thermodynamics are presented and compared with numerical simulations. Unlike previous attempts, this algorithm is shown to be stable down to the Janus limit, thus paving the way for analyzing the frustration mechanism characteristic of the gas-liquid transition in the Janus system. The results are also compared with Barker-Henderson thermodynamic perturbation theory on the same model. We then discuss the pros and cons of both approaches within a unified treatment. On balance, RHNC integral equation theory, even with an isotropic hard-sphere reference system, is found to be a good compromise between accuracy of the results, computational effort, and uniform quality to tackle self-assembly processes in patchy colloids of complex nature. Further improvement in RHNC however clearly requires an anisotropic reference bridge function.

  11. Neural Tube Defects

    MedlinePlus

    Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the first month ... she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In spina ...

  12. Facts about Birth Defects

    MedlinePlus

    ... Button Information For… Media Policy Makers Facts about Birth Defects Language: English (US) Español (Spanish) Recommend ... having a baby born without a birth defect. Birth Defects Are Common Every 4 ½ minutes, a ...

  13. Birth Defects (For Parents)

    MedlinePlus

    ... there is a problem with a baby's body chemistry, it is called a metabolic birth defect. Metabolic defects prevent the body from properly breaking down food to create energy. Examples of metabolic defects include ...

  14. Atrial septal defect (ASD)

    MedlinePlus

    ... other heart defects of the ventricular septum and mitral valve . Secundum defects can be a single, small ... Sometimes, open-heart surgery may be needed to repair the defect. The type of surgery is more ...

  15. Highly n -doped silicon: Deactivating defects of donors

    NASA Astrophysics Data System (ADS)

    Mueller, D. Christoph; Fichtner, Wolfgang

    2004-12-01

    We report insight into the deactivation mechanisms of group V donors in heavily doped silicon. Based on our ab initio calculations, we suggest a three step model for the donor deactivation. In highly n -type Si grown at low temperatures, in the absence of excess native point defects, the intrinsic limit to ne seems to rise in part by means of donor deactivating distortions of the silicon lattice in the proximity of two or more donor atoms that share close sites. Also, donor dimers play an important part in the deactivation at high doping concentrations. While the dimers constitute a stable or metastable inactive donor configuration, the lattice distortions lower the donor levels gradually below the impurity band in degenerate silicon. On the other hand, we find that, in general, none of the earlier proposed deactivating donor pair defects is stable at any position of the Fermi level. The lattice distortions may be viewed as a precursor to Frenkel pair generation and donor-vacancy clustering process (step 2) that account for deactivation at elevated temperature and longer annealing times. Ultimately, and most prominently in the case of the large Sb atoms, precipitation of the donor atoms may set in as the last step of the deactivation process chain.

  16. Off-stoichiometric defect clustering in irradiated oxides

    NASA Astrophysics Data System (ADS)

    Khalil, Sarah; Allen, Todd; EL-Azab, Anter

    2017-04-01

    A cluster dynamics model describing the formation of vacancy and interstitial clusters in irradiated oxides has been developed. The model, which tracks the composition of the oxide matrix and the defect clusters, was applied to the early stage formation of voids and dislocation loops in UO2, and the effects of irradiation temperature and dose rate on the evolution of their densities and composition was investigated. The results show that Frenkel defects dominate the nucleation process in irradiated UO2. The results also show that oxygen vacancies drive vacancy clustering while the migration energy of uranium vacancies is a rate-limiting factor for the nucleation and growth of voids. In a stoichiometric UO2 under irradiation, off-stoichiometric vacancy clusters exist with a higher concentration of hyper-stoichiometric clusters. Similarly, off-stoichiometric interstitial clusters form with a higher concentration of hyper-stoichiometric clusters. The UO2 matrix was found to be hyper-stoichiometric due to the accumulation of uranium vacancies.

  17. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

    SciTech Connect

    Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M.

    2013-11-07

    Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

  18. Solutions to Defect-Related Problems in Implanted Silicon by Controlled Injection of Vacancies by High-Energy Ion Irradiation

    SciTech Connect

    Duggan, J.L.; Holland, O.W.; Roth, E.

    1998-11-04

    Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Pre-amorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectroscopy was used to profile the dopant distributions.

  19. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

    SciTech Connect

    Bang, Junhyeok; Sun, Y. Y.; Song, Jung -Hoon; Zhang, S. B.

    2016-04-14

    Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.

  20. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

    DOE PAGES

    Bang, Junhyeok; Sun, Y. Y.; Song, Jung -Hoon; ...

    2016-04-14

    Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited tomore » InGaN-based light emitting devices.« less

  1. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices.

    PubMed

    Bang, Junhyeok; Sun, Y Y; Song, Jung-Hoon; Zhang, S B

    2016-04-14

    Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. This NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.

  2. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

    PubMed Central

    Bang, Junhyeok; Sun, Y. Y.; Song, Jung-Hoon; Zhang, S. B.

    2016-01-01

    Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. This NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices. PMID:27075818

  3. FAST TRACK COMMUNICATION: Modulated charged defects and conduction behaviour in doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Wang, J.

    2009-08-01

    The charged defective structure in Bi1-xLaxFeO3 (BLF) and La-10% and Mg-2% co-doped BiFeO3 (BLFM) thin films as well as their relations to leakage and dielectric relaxation behaviour are investigated. Through temperature-dependent conductivity and x-ray photoelectron spectroscopy analyses, it is demonstrated that La doping suppresses but Mg doping increases the concentration of both oxygen vacancies (OVs) and Fe2+ ions. Correspondingly, the leakage mechanism evolves from grain boundary and space charge limited conduction of BLF (x = 0.2 and 0.1) to Poole-Frenkel emission of BLFM and BiFeO3. Although the dielectric relaxation originates from the migration of OVs, the formation of defect complexes between the acceptors and OVs is responsible for the increased activation energy of the BLFM film.

  4. Defect structure of pure and Sn, Ca-doped In{sub 2}O{sub 3}

    SciTech Connect

    Ikuma, Yasuro

    1996-12-31

    From oxygen diffusion data, it was shown that, to reach the equilibrium state, In{sub 2}O{sub 3} had to be formed and tested at relatively high temperatures. The defect structure of In{sub 2}O{sub 3}, pure and doped with either Sn or Ca, was discussed in relation to the oxygen diffusion data. From the comparison of the Kroger-Vink diagram and the selected experimental data, it was demonstrated that, as long as proper data were chosen, both electrical conductivity and diffusivity of either pure or doped In{sub 2}O{sub 3} were explained by a simple Kroger-Vink diagram based on oxygen Frenkel defects.

  5. Formation and annihilation of intrinsic defects induced by electronic excitation in high-purity crystalline SiO{sub 2}

    SciTech Connect

    Kajihara, Koichi; Skuja, Linards; Hosono, Hideo

    2013-04-14

    Formation and thermal annihilation of intrinsic defects in {alpha}-quartz were examined using high-purity samples, while minimizing the contributions of reactions involving metallic impurities. Electronic excitation with {sup 60}Co {gamma}-rays was employed to avoid radiation-induced amorphization. The results clearly show that formation of oxygen vacancies (Si-Si bonds) as a result of decomposition of regular Si-O-Si bonds (Frenkel process) is the dominant intrinsic defect process. Compared with amorphous SiO{sub 2}, in {alpha}-quartz, the formation yield of Si-Si bonds is an order of magnitude smaller, the 7.6 eV optical absorption band is less broadened, and their thermal annihilation is complete at a lower temperature, around the {alpha}-{beta} quartz transition. In contrast, radiation-induced interstitial oxygen atoms practically do not form interstitial oxygen molecules.

  6. Enhanced damage resistance and novel defect structure of CrFeCoNi under in situ electron irradiation

    SciTech Connect

    He, Mo -Rigen; Wang, Shuai; Jin, Ke; Bei, Hongbin; Yasuda, Kazuhiro; Matsumura, Syo; Higashida, Kenji; Robertson, Ian M.

    2016-07-25

    Defect production and growth in CrFeCoNi, a single-phase concentrated solid solution alloy, is characterized using in situ electron irradiation inside a transmission electron microscope operated at 400–1250 kV and 400 °C. All observed defects are interstitial-type, either elliptical Frank loops or polygonal (mostly rhombus) perfect loops. Both forms of loops in CrFeCoNi exhibit a sublinear power law of growth that is > 40 times slower than the linear defect growth in pure Ni. Lastly, this result shows how compositional complexity impacts the production of Frenkel pairs and the agglomeration of interstitials into loops, and, thus, enhances the radiation tolerance.

  7. Enhanced damage resistance and novel defect structure of CrFeCoNi under in situ electron irradiation

    SciTech Connect

    He, Mo -Rigen; Wang, Shuai; Jin, Ke; Bei, Hongbin; Yasuda, Kazuhiro; Matsumura, Syo; Higashida, Kenji; Robertson, Ian M.

    2016-07-25

    Defect production and growth in CrFeCoNi, a single-phase concentrated solid solution alloy, is characterized using in situ electron irradiation inside a transmission electron microscope operated at 400–1250 kV and 400 °C. All observed defects are interstitial-type, either elliptical Frank loops or polygonal (mostly rhombus) perfect loops. Both forms of loops in CrFeCoNi exhibit a sublinear power law of growth that is > 40 times slower than the linear defect growth in pure Ni. Lastly, this result shows how compositional complexity impacts the production of Frenkel pairs and the agglomeration of interstitials into loops, and, thus, enhances the radiation tolerance.

  8. Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

    NASA Astrophysics Data System (ADS)

    Grinyaev, S. N.; Razzhuvalov, A. N.

    2016-10-01

    The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.

  9. Multiscale modeling of crowdion and vacancy defects in body-centered-cubic transition metals

    SciTech Connect

    Derlet, P. M.; Nguyen-Manh, D.

    2007-08-01

    We investigate the structure and mobility of single self-interstitial atom and vacancy defects in body-centered-cubic transition metals forming groups 5B (vanadium, niobium, and tantalum) and 6B (chromium, molybdenum, and tungsten) of the Periodic Table. Density-functional calculations show that in all these metals the axially symmetric <111> self-interstitial atom configuration has the lowest formation energy. In chromium, the difference between the energies of the <111> and the <110> self-interstitial configurations is very small, making the two structures almost degenerate. Local densities of states for the atoms forming the core of crowdion configurations exhibit systematic widening of the ''local'' d band and an upward shift of the antibonding peak. Using the information provided by electronic structure calculations, we derive a family of Finnis-Sinclair-type interatomic potentials for vanadium, niobium, tantalum, molybdenum, and tungsten. Using these potentials, we investigate the thermally activated migration of self-interstitial atom defects in tungsten. We rationalize the results of simulations using analytical solutions of the multistring Frenkel-Kontorova model describing nonlinear elastic interactions between a defect and phonon excitations. We find that the discreteness of the crystal lattice plays a dominant part in the picture of mobility of defects. We are also able to explain the origin of the non-Arrhenius diffusion of crowdions and to show that at elevated temperatures the diffusion coefficient varies linearly as a function of absolute temperature.

  10. Atrioventricular Canal Defect

    MedlinePlus

    ... birth (congenital). The condition is often associated with Down syndrome. Atrioventricular canal defect allows extra blood to flow ... baby's heart is developing. Some factors, such as Down syndrome, might increase the risk of atrioventricular canal defect. ...

  11. Birth Defects (For Parents)

    MedlinePlus

    ... to create energy. Examples of metabolic defects include Tay-Sachs disease , a fatal disease that affects the central nervous ... called recessive inheritance and includes conditions such as Tay-Sachs disease and cystic fibrosis . A disease or defect also ...

  12. Duralumin - Defects and Failures

    NASA Technical Reports Server (NTRS)

    Nelson, WM

    1927-01-01

    It is proposed in this paper to identify some of the defects and failures in duralumin most frequently encountered by the aircraft industry with a view to indicate their importance. The defects and failures in duralumin may be classified into the following groups: 1) defects produced during manufacture; 2) defects produced during fabrication; 3) corrosion and erosion; and 4) fatigue failures. Only the first two will be covered in this report.

  13. Atomistic simulation of defects in alkaline-earth fluorohalide crystals

    NASA Astrophysics Data System (ADS)

    Baetzold, Roger C.

    1987-12-01

    Defect properties of BaFBr, BaFCl, and SrFCl were calculated using the atomistic simulation technique. Two-body potentials were developed starting from potentials in related crystals or calculated by the electron-gas method and then fit to minimize strain in the equilibrium structure. Agreement of calculated elastic, dielectric, and cohesive properties with available experimental and theoretical data was reasonable. Generally, Frenkel energies for the larger-size halogen ion were less than for the fluorine ion and less than the Schottky energy for the metal, fluoride, and other halide ions set. A Schottky energy for vacancies of the metal ion and two of the larger-size halide ions was small. Energies of formation of Vk and H centers were computed with the aid of thermodynamic cycles. The most stable Vk center forms on the halide ion site where the Madelung potential is most favorable for holes. H centers occupy off-center sites in these low-symmetry materials. Stable geometries are discussed.

  14. Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

    SciTech Connect

    Vidya, R.; Ravindran, P.; Fjellvaag, H.; Svensson, B. G.; Monakhov, E.; Ganchenkova, M.; Nieminen, R. M.

    2011-01-15

    Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (V{sub O}), zinc vacancy (V{sub Zn}), oxygen at an interstitial site (O{sub i}), Zn at an interstitial site (Zn{sub i}), Zn at V{sub O} (Zn{sub O}), O at V{sub Zn}(O{sub Zn}), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (V{sub O}+Zn{sub i}) and Zn-vacancy clusters are studied. The Schokkty pair (V{sub O}+V{sub Zn}) and Frenkel pairs [(V{sub O}+O{sub i}) and (V{sub Zn}+Zn{sub i})] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that V{sub O} would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both Zn{sub O} and Zn{sub i} are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in V{sub O}, but we find that it can originate from the antisite Zn{sub O} defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by V{sub Zn} are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

  15. Congenital defects of sheep.

    PubMed

    Dennis, S M

    1993-03-01

    With increasing incrimination of viruses, plants, and drugs as causes of ovine congenital defects, concerted efforts are required to identify environmental teratogens. Expanding knowledge of congenital defects requires studying as many defective lambs as possible; recording and documenting; detailed diagnostic examinations; genetic analyses and chromosomal examinations, whenever possible; and field investigations. Adopting standardized classification, terminology, and diagnostic procedures should improve descriptions, diagnoses, and interdisciplinary exchange of information. That, in turn, should improve our knowledge of and diagnosis of congenital defects of sheep in the future. Finally, veterinary clinicians and diagnosticians are encouraged to take an interest in congenital defects and teratology.

  16. Defect production in ceramics

    SciTech Connect

    Zinkle, S.J.; Kinoshita, C.

    1997-08-01

    A review is given of several important defect production and accumulation parameters for irradiated ceramics. Materials covered in this review include alumina, magnesia, spinel silicon carbide, silicon nitride, aluminum nitride and diamond. Whereas threshold displacement energies for many ceramics are known within a reasonable level of uncertainty (with notable exceptions being AIN and Si{sub 3}N{sub 4}), relatively little information exists on the equally important parameters of surviving defect fraction (defect production efficiency) and point defect migration energies for most ceramics. Very little fundamental displacement damage information is available for nitride ceramics. The role of subthreshold irradiation on defect migration and microstructural evolution is also briefly discussed.

  17. Topological defect lasers

    NASA Astrophysics Data System (ADS)

    Knitter, Sebastian; Fatt Liew, Seng; Xiong, Wen; Guy, Mikhael I.; Solomon, Glenn S.; Cao, Hui

    2016-01-01

    We introduce a topological defect to a regular photonic crystal defect cavity with anisotropic unit cell. Spatially localized resonances are formed and have high quality factor. Unlike the regular photonic crystal defect states, the localized resonances in the topological defect structures support powerflow vortices. Experimentally we realize lasing in the topological defect cavities with optical pumping. This work shows that the spatially inhomogeneous variation of the unit cell orientation adds another degree of freedom to the control of lasing modes, enabling the manipulation of the field pattern and energy flow landscape.

  18. Postdevelopment defect evaluation

    NASA Astrophysics Data System (ADS)

    Miyahara, Osamu; Kiba, Yukio; Ono, Yuko

    2001-08-01

    Reduction of defects after development is a critical issue in photolithography. A special category of post development defects is the satellite defect which is located in large exposed areas generally in proximity to large unexposed regions of photoresist. We have investigated the formation of this defect type on ESCAP and ACETAL DUV resists with and without underlying organic BARCs, In this paper, we will present AFM and elemental analysis data to determine the origin of the satellite defect. Imaging was done on a full-field Nikon 248nm stepper and resist processing was completed on a TEL CLEAN TRACK ACT 8 track. Defect inspection and review were performed on a KLA-Tencor and Hitachi SEM respectively. Results indicate that the satellite defect is generated on both BARC and resist films and defect counts are dependent on the dark erosion. Elemental analysis indicates that the defects are composed of sulfur and nitrogen compounds. We suspect that the defect is formed as a result of a reaction between PAG, quencher and TMAH. This defect type is removed after a DIW re-rinse.

  19. Evidence of local defects in the oxygen excess apatite La{sub 9.67}(SiO{sub 4}){sub 6}O{sub 2.5} from high resolution neutron powder diffraction

    SciTech Connect

    Guillot, Stephanie; Beaudet-Savignat, Sophie; Lambert, Sebastien; Vannier, Rose-Noelle; Roussel, Pascal; Porcher, Florence

    2009-12-15

    From neutron diffraction data collected at 3 K on a powder of La{sub 9.67}(SiO{sub 4}){sub 6}O{sub 2.5} composition and a careful examination of the average structure, a model was proposed to explain the oxygen over-stoichiometry in the apatite structure. This model leads to realistic distances to neighbouring atoms. Moreover, it accounts perfectly for the maximum oxygen content observed in these materials. Up to 0.5 oxygen atom located at the vicinity of the 2a site (0, 0, 1/4) would be shifted to a new interstitial position in the channel at (-0.01, 0.04, 0.06), creating a Frenkel defect, with the possibility of a maximum occupancy in this site equal to twice the Frenkel defect numbers. This structural model is in good agreement with the oxygen diffusion pathways recently proposed by Bechade et al. (2009) using computer modeling techniques. It supports preferred oxygen diffusion pathways via interstitial oxygen atoms and vacant sites along [0 0 1], close to the centre of the La(2)-O channels. - Graphical abstract legend: Structural defect position and possible conduction mechanism along the c-axis (representation of two adjacent unit-cells)

  20. Theoretical investigation of thermodynamic stability and mobility of the intrinsic point defects in Ti3AC2 (A = Si, Al).

    PubMed

    Wang, Jiemin; Liu, Bin; Wang, Jingyang; Zhou, Yanchun

    2015-04-14

    Nano-laminated Ti3AC2 (A = Si, Al) are highlighted as nuclear materials for a generation IV (GIV) reactor because they show high tolerance to radiation damage and remain crystalline under irradiation of high fluence heavy ions. In this paper, the energetics of formation and migration of intrinsic point defects are predicted by density functional theory calculations. We find that the space near the A atomic plane acts as a point defect sink and can accommodate lattice disorder. The migration energy barriers of Si/Al vacancy and TiSi anti-site defects along the atomic plane A are in the range of 0.3 to 0.9 eV, indicating their high mobility and the fast recovery of Si/Al Frenkel defects and Ti-A antisite pairs after irradiation. This layered structure induced large disorder accommodation and fast defect recovery must play an important role in the micro-structural response of Ti3AC2 to irradiation.

  1. Ventricular Septal Defect (For Parents)

    MedlinePlus

    ... Atrial Septal Defect Ventricular Septal Defect Heart and Circulatory System ECG (Electrocardiogram) Anesthesia - What to Expect Tetralogy of ... Atrial Septal Defect Ventricular Septal Defect Heart and Circulatory System Contact Us Print Resources Send to a friend ...

  2. Ventricular Septal Defect (For Parents)

    MedlinePlus

    ... Atrial Septal Defect Ventricular Septal Defect Heart and Circulatory System ECG (Electrocardiogram) Anesthesia - What to Expect Tetralogy of ... Atrial Septal Defect Ventricular Septal Defect Heart and Circulatory System Contact Us Print Resources Send to a Friend ...

  3. Unraveling energy conversion modeling in the intrinsic persistent upconverted luminescence of solids: a study of native point defects in antiferromagnetic Er2O3.

    PubMed

    Huang, Bolong

    2016-05-11

    We investigated the mechanism of the intrinsic persistent luminescence of Er2O3 in the A-type lattice based on first-principles calculations. We found that the native point defects were engaged in mutual subtle interactions in the form of chemical reactions between different charge states. The release of energy related to lattice distortion facilitates the conversion of energy for electrons to be transported between the valence band and the trap levels or even between the deep trap levels so as to generate persistent luminescence. The defect transitions that take place along the zero-phonon line release energy to enable optical transitions, with the exact amount of negative effective correlation energy determined by the lattice distortions. Our calculations on the thermodynamic transition levels confirm that both the visible and NIR experimentally observed intrinsic persistent luminescence (phosphor or afterglow) are related to the thermodynamic transition levels of oxygen-related defects, and the thermodynamic transition levels within different charge states for these defects are independent of the chemical potentials of the given species. Lattice distortion defects such as anion Frenkel (a-Fr) pair defects play an important role in transporting O-related defects between different lattice sites. To obtain red persistent luminescence that matches the biological therapeutic window, it is suggested to increase the electron transition levels between high-coordinated O vacancies and related metastable a-Fr defects; a close-packed core-shell structure is required to quench low-coordinated O-related defects so as to reduce the green band luminescence. We further established a conversed chain reaction (CCR) model to interpret the energy conversion process of persistent luminescence in terms of the inter-reactions of native point defects between different charge states. It is advantageous to use the study of defect levels combined with formation energies to suggest limits

  4. Repair of Auricular Defects.

    PubMed

    Watson, Deborah; Hecht, Avram

    2017-08-01

    Repairing defects of the auricle requires an appreciation of the underlying 3-dimensional framework, the flexible properties of the cartilages, and the healing contractile tendencies of the surrounding soft tissue. In the analysis of auricular defects and planning of their reconstruction, it is helpful to divide the auricle into subunits for which different techniques may offer better functional and aesthetic outcomes. This article reviews many of the reconstructive options for defects of the various auricular subunits. Published by Elsevier Inc.

  5. Defects in hardwood timber

    Treesearch

    Roswell D. Carpenter; David L. Sonderman; Everette D. Rast; Martin J. Jones

    1989-01-01

    Includes detailed information on all common defects that may aRect hardwood trees and logs. Relationships between manufactured products and those forms of round material to be processed from the tree for conversion into marketable products are discussed. This handbook supersedes Agriculture Handbook No. 244, Grade defects in hardwood timber and logs, by C.R. Lockard, J...

  6. Diabetes mellitus and birth defects

    PubMed Central

    Correa, Adolfo; Gilboa, Suzanne M.; Besser, Lilah M.; Botto, Lorenzo D.; Moore, Cynthia A.; Hobbs, Charlotte A.; Cleves, Mario A.; Riehle-Colarusso, Tiffany J.; Waller, D. Kim; Reece, E. Albert

    2016-01-01

    OBJECTIVE The purpose of this study was to examine associations between diabetes mellitus and 39 birth defects. STUDY DESIGN This was a multicenter case-control study of mothers of infants who were born with (n = 13,030) and without (n = 4895) birth defects in the National Birth Defects Prevention Study (1997–2003). RESULTS Pregestational diabetes mellitus (PGDM) was associated significantly with noncardiac defects (isolated, 7/23 defects; multiples, 13/23 defects) and cardiac defects (isolated, 11/16 defects; multiples, 8/16 defects). Adjusted odds ratios for PGDM and all isolated and multiple defects were 3.17 (95% CI, 2.20–4.99) and 8.62 (95% CI, 5.27–14.10), respectively. Gestational diabetes mellitus (GDM) was associated with fewer noncardiac defects (isolated, 3/23 defects; multiples, 3/23 defects) and cardiac defects (isolated, 3/16 defects; multiples, 2/16 defects). Odds ratios between GDM and all isolated and multiple defects were 1.42 (95% CI, 1.17–1.73) and 1.50 (95% CI, 1.13–2.00), respectively. These associations were limited generally to offspring of women with prepregnancy body mass index ≥25 kg/m2. CONCLUSION PGDM was associated with a wide range of birth defects; GDM was associated with a limited group of birth defects. PMID:18674752

  7. Point defects diagrams for pure and doped copper oxide Cu{sub 2{+-}{delta}}O in the temperature range of 873-1473 K

    SciTech Connect

    Stoklosa, A.

    2012-10-15

    Point defects diagrams for the Cu{sub 2{+-}{delta}}O, both pure and doped with M{sup 2+} metal ions with all the types of defects in the cation sublattice considered are presented in this work. The calculations of the diagrams were performed by a novel method. The calculations were based on the data from the results of the studies of the deviation from stoichiometry and the electrical conductivity in the temperature range of 873-1473 K. The values of {Delta}G{sup o} of the formation of Frenkel-type defects, of copper vacancies, and of interstitial copper atoms were determined and their temperature dependence. It was shown that character of the dependence of the sum of concentrations of electronic defects ([h{sup Bullet }]+b[e Prime ]) on p{sub O{sub 2}} is fully consistent with its dependence of the electrical conductivity. Their mobility ({mu}{sub e}/{mu}{sub h}=b), vary from 1300 to 30. The dope M{sup 2+} increases the concentration of electrons and shifts the minimum of electrical conductivity toward higher oxygen pressures. - Graphical abstract: This work presents point defects diagrams for the Cu{sub 2{+-}{delta}}O, with all the types of defects in the cation sublattice considered. Highlights: Black-Right-Pointing-Pointer The point defects diagrams. Copper oxide Cu{sub 2{+-}{delta}}O, for pure and M{sup 2+} doped. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation of Frenkel-type defects were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation QUOTE QUOTE of singly-ionized copper vacancies were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation of electroneutral copper vacancies were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation and of interstitial copper atoms were determined.

  8. Defects in Calcite.

    DTIC Science & Technology

    1991-05-13

    AD-A245 645 A TRIDENT SCHOLAR PROJECT REPORT NO. 181 "DEFECTS IN CALCITE " DTTC %N FEB 5-1912 UNITED STATES NAVAL ACADEMY ANNAPOLIS, MARYLAND 92-02841...report; no. 181 (1991) "DEFECTS IN CALCITE " A Trident Scholar Project Report by Midshipman Anthony J. Kotarski, Class of 1991 U. S. Naval Academy Annapolis...REPORT TYPE AND DATES COVERED 13 May 1991 Final 1990/91 . TITLE AND SUBTITLE s. FUNDING NUMBERS DEFECTS IN CALCITE 6. AUTHOR(S) Anthony J. Kotarski 7

  9. Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect

    NASA Astrophysics Data System (ADS)

    Ayedh, H. M.; Nipoti, R.; Hallén, A.; Svensson, B. G.

    2017-07-01

    The carbon vacancy (VC) is a prominent defect in as-grown 4H-SiC epitaxial layers for high power bipolar devices. VC is electrically active with several deep levels in the bandgap, and it is an efficient "killer" of the minority carrier lifetime in n-type layers, limiting device performance. In this study, we provide new insight into the equilibration kinetics of the thermodynamic processes governing the VC concentration and how these processes can be tailored. A slow cooling rate after heat treatment at ˜2000 °C, typically employed to activate dopants in 4H-SiC, is shown to yield a strong reduction of the VC concentration relative to that for a fast rate. Further, post-growth heat treatment of epitaxial layers has been conducted over a wide temperature range (800-1600 °C) under C-rich surface conditions. It is found that the thermodynamic equilibration of VC at 1500 °C requires a duration less than 1 h resulting in a VC concentration of only ˜1011 cm-3, which is, indeed, beneficial for high voltage devices. In order to elucidate the physical processes controlling the equilibration of VC, a defect kinetics model is put forward. The model assumes Frenkel pair generation, injection of carbon interstitials (Ci's) from the C-rich surface (followed by recombination with VC's), and diffusion of VC's towards the surface as the major processes during the equilibration, and it exhibits good quantitative agreement with experiment.

  10. Birth Defects: Cerebral Palsy

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  11. Ventricular Septal Defect (VSD)

    MedlinePlus

    ... specially sized mesh device to close the hole. Hybrid procedure. A hybrid procedure uses surgical and catheter-based techniques. Access ... clinicalkey.com. Accessed Sept. 15, 2014. Konetti NR. Hybrid muscular ventricular defect closure: Surgeon or physician. Indian ...

  12. Ventricular Septal Defect (VSD)

    MedlinePlus

    ... you exert yourself or when you lie down Rapid or irregular heartbeat Fatigue or weakness Causes Congenital heart defects arise from problems early in the heart's development, but there's often no clear cause. Genetics and ...

  13. Single Ventricle Defects

    MedlinePlus

    ... artery and blood reaches the aorta through a patent ductus arteriosus (see diagram). How does the defect ... only source of lung blood flow is the patent ductus arteriosus (PDA), an open passageway between the ...

  14. Detecting Speech Defects

    ERIC Educational Resources Information Center

    Kryza, Frank T., II

    1976-01-01

    Discusses the importance of early detection of speech defects and briefly describes the activities of the Pre-School Diagnostic Center for Severe Communication Disorders in New Haven, Connecticut. (ED)

  15. Neural Tube Defects

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  16. Birth Defects: Cerebral Palsy

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  17. Congenital Heart Defects

    MedlinePlus

    ... Treatment can include medicines, catheter procedures, surgery, and heart transplants. The treatment depends on the type of the defect, how severe it is, and a child's age, size, and general health. NIH: National Heart, Lung, and Blood Institute

  18. Birth defects monitoring

    SciTech Connect

    Klingberg, M.A.; Papier, C.M.; Hart, J.

    1983-01-01

    Population monitoring of birth defects provides a means for detecting relative changes in their frequency. Many varied systems have been developed throughout the world since the thalidomide tragedy of the early 1960s. Although it is difficult to pinpoint specific teratogenic agents based on rises in rates of a particular defect or a constellation of defects, monitoring systems can provide clues for hypothesis testing in epidemiological investigations. International coordination of efforts in this area resulted in the founding of the International Clearinghouse for Birth Defects Monitoring Systems (ICBDMS) in 1974. In this paper we will describe the functions and basic requirements of monitoring systems in general, and look at the development and activities of the ICBDMS. A review of known and suspected environmental teratogenic agents (eg, chemical, habitual, biological, physical, and nutritional) is also presented.

  19. Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

    SciTech Connect

    Aidhy, Dilpuneet S.; Lu, Chenyang; Jin, Ke; Bei, Hongbin; Zhang, Yanwen; Wang, Lumin; Weber, William J.

    2015-08-08

    Using molecular dynamics simulations, we elucidate irradiation-induced point defect evolution in fcc pure Ni, Ni0.5Fe0.5, and Ni0.8Cr0.2 solid solution alloys. We find that irradiation-induced interstitials form dislocation loops that are of 1/3 <111>{111}-type, consistent with our experimental results. While the loops are formed in all the three materials, the kinetics of formation is considerably slower in NiFe and NiCr than in pure Ni, indicating that defect migration barriers and extended defect formation energies could be higher in the alloys than pure Ni. As a result, while larger size clusters are formed in pure Ni, smaller and more clusters are observed in the alloys. The vacancy diffusion occurs at relatively higher temperatures than interstitials, and their clustering leads to formation of stacking fault tetrahedra, also consistent with our experiments. The results also show that the surviving Frenkel pairs are composition-dependent and are largely Ni dominated.

  20. Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

    DOE PAGES

    Aidhy, Dilpuneet S.; Lu, Chenyang; Jin, Ke; ...

    2015-08-08

    Using molecular dynamics simulations, we elucidate irradiation-induced point defect evolution in fcc pure Ni, Ni0.5Fe0.5, and Ni0.8Cr0.2 solid solution alloys. We find that irradiation-induced interstitials form dislocation loops that are of 1/3 <111>{111}-type, consistent with our experimental results. While the loops are formed in all the three materials, the kinetics of formation is considerably slower in NiFe and NiCr than in pure Ni, indicating that defect migration barriers and extended defect formation energies could be higher in the alloys than pure Ni. As a result, while larger size clusters are formed in pure Ni, smaller and more clusters are observedmore » in the alloys. The vacancy diffusion occurs at relatively higher temperatures than interstitials, and their clustering leads to formation of stacking fault tetrahedra, also consistent with our experiments. The results also show that the surviving Frenkel pairs are composition-dependent and are largely Ni dominated.« less

  1. Influence of in situ applied ultrasound during Si+ implantation in SiO2 on paramagnetic defect generation

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Romanyuk, A.; Stesmans, A.

    2010-06-01

    Electron spin resonance (ESR) results are presented on the influence of in situ ultrasound treatment (UST) during implantation at 300 K of Si+ ions into thermal SiO2 on (100)Si before and after subsequent high-temperature (T) annealing (1100 °C) intended to promote the formation of embedded Si nanoparticles. The as-implanted state exhibits high densities of three prominent types of point defects, including the SiO2-specific S and E'γ O-vacancy type centers, and an unknown broad (≈20 G) signal at g≈2.0026 denoted IS. The high-intensity S signal shows demagnetization shape effects, pointing to a distribution of high local density of defects over a thin layer. UST is observed to effectuate a drastic reduction in S and E'γ centers, and elimination of IS beyond detection. This reveals a strong healing influence of in situ transferred ultrasound (US) energy on implantation-induced damage, here quantified and identified on atomic level in terms of mainly intrinsic paramagnetic point defects elimination, viz., Frenkel pair elimination, while all three initial signals disappear. Other types of defects surface after annealing of the non-US treated sample, including the SiO2-specific EX defect signal and Pb-type Si/SiO2 interface centers, the appearance of the latter providing direct ESR evidence for crystallization of the excess Si nanoparticles. The influence of the UST healing effect is kept up after subsequent annealing, now resulting in the absence of virtually all ESR-active centers. The drop in Pb-type centers below the detection level in the UST annealed sample indicates improvement of the nanocrystalline-Si/SiO2 interface quality. The combination of UST with high-T annealing emerges as a highly efficient means to eradicate ion implantation damage in terms of intrinsic point defects.

  2. Experimental study of point-defect creation in high-energy heavy-ion tracks

    NASA Astrophysics Data System (ADS)

    Perez, A.; Balanzat, E.; Dural, J.

    1990-03-01

    Thin platelets of LiF crystals have been bombarded on the side with Ne (40 MeV/amu), Ar (60 MeV/amu), Kr (42 MeV/amu), and Xe (27 MeV/amu) ions at room temperature in the dose range from 108 to 1013 ions cm-2. Taking into account the large penetration depths of these high-energy ions (~=1.4, 1.8, 0.6, and 0.2 mm for Ne, Ar, Kr, and Xe, respectively), it was possible to measure the depth distribution profiles of primary point defects (F centers) and aggregated defects (F2 centers) using a microspectrophotometric technique. These defects are localized in tracks surrounding the ion trajectories in which the energy is deposited by the δ rays emitted. Concerning the creation of primary defects, it has been shown that each individual track is saturated with F centers (~=4×1018 F centers/cm3). From the evolution of the F center depth profiles as a function of the ion doses, using a model of saturated tracks, it has been possible to determine the radii of the tracks all along the ion trajectories. These radii, which are of the order of 7.5, 8, 14, and 32 nm at the entrance in the crystals for Ne, Ar, Kr, and Xe, respectively, increase continuously up to the values of 12, 16, 20, and 44 nm during the slowing down of the ions up to the end of the trajectories. In the wide range of energy deposition into electronic processes studied (from 0.2 to 20 MeV μm-1), a continuous behavior of the primary-defect creation is observed. This seems to indicate that the same excitonic mechanism is responsible of the primary-Frenkel-pair creation in the volume of the track irradiated by the secondary electrons and other mechanisms such as Coulomb explosion or melting, which could take place in the tracks above a certain dissipated-energy threshold, must be ruled out. Finally, the specificity of damaging with ions compared with other irradiation modes (electrons or electromagnetic radiation) is mainly observed with aggregated defects. Due to the high energy density dissipated in the tracks

  3. Birth Defects. Matrix No. 2.

    ERIC Educational Resources Information Center

    Brent, Robert L.

    This report discusses the magnitude of the problem of birth defects, outlines advances in the birth defects field in the past decade, and identifies those areas where research is needed for the prevention, treatment, and management of birth defects. The problem of birth defects has consumed a greater portion of our health care resources because of…

  4. Structural birth defects associated with neural tube defects in Hawai'i from 1986 until 2001.

    PubMed

    Forrester, Mathias B; Merz, Ruth D

    2007-09-01

    Using birth defects registry data, this study identified birth defects associated with anencephaly, spina bifida, and encephalocele. Musculoskeletal defects were associated with anencephaly; central nervous system defects, gastrointestinal atresia/stenosis, genitourinary system defects, and musculoskeletal system defects with spina bifida; and central nervous system defects, respiratory defects, oral clefts, genitourinary system defects, and musculoskeletal system defects with encephalocele.

  5. Reconstruction of Mandibular Defects

    PubMed Central

    Chim, Harvey; Salgado, Christopher J.; Mardini, Samir; Chen, Hung-Chi

    2010-01-01

    Defects requiring reconstruction in the mandible are commonly encountered and may result from resection of benign or malignant lesions, trauma, or osteoradionecrosis. Mandibular defects can be classified according to location and extent, as well as involvement of mucosa, skin, and tongue. Vascularized bone flaps, in general, provide the best functional and aesthetic outcome, with the fibula flap remaining the gold standard for mandible reconstruction. In this review, we discuss classification and approach to reconstruction of mandibular defects. We also elaborate upon four commonly used free osteocutaneous flaps, inclusive of fibula, iliac crest, scapula, and radial forearm. Finally, we discuss indications and use of osseointegrated implants as well as recent advances in mandibular reconstruction. PMID:22550439

  6. Wire insulation defect detector

    NASA Technical Reports Server (NTRS)

    Greulich, Owen R. (Inventor)

    2004-01-01

    Wiring defects are located by detecting a reflected signal that is developed when an arc occurs through the defect to a nearby ground. The time between the generation of the signal and the return of the reflected signal provides an indication of the distance of the arc (and therefore the defect) from the signal source. To ensure arcing, a signal is repeated at gradually increasing voltages while the wire being tested and a nearby ground are immersed in a conductive medium. In order to ensure that the arcing occurs at an identifiable time, the signal whose reflection is to be detected is always made to reach the highest potential yet seen by the system.

  7. Assessing EUV mask defectivity

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Tchikoulaeva, Anna; Ackmann, Paul; Wood, Obert; La Fontaine, Bruno; Bubke, Karsten; Holfeld, Christian; Peters, Jan Hendrik; Kini, Sumanth; Watson, Sterling; Lee, Isaac; Mu, Bo; Lim, Phillip; Raghunathan, Sudhar; Boye, Carol

    2010-04-01

    This paper assesses the readiness of EUV masks for pilot line production. The printability of well characterized reticle defects, with particular emphasis on those reticle defects that cause electrical errors on wafer test chips, is investigated. The reticles are equipped with test marks that are inspected in a die-to-die mode (using DUV inspection tool) and reviewed (using a SEM tool), and which also comprise electrically testable patterns. The reticles have three modules comprising features with 32 nm ground rules in 104 nm pitch, 22 nm ground rules with 80 nm pitch, and 16 nm ground rules with 56 nm pitch (on the wafer scale). In order to determine whether specific defects originate from the substrate, the multilayer film, the absorber stack, or from the patterning process, the reticles were inspected after each fabrication step. Following fabrication, the reticles were used to print wafers on a 0.25 NA full-field ASML EUV exposure tool. The printed wafers were inspected with state of the art bright-field and Deep UV inspection tools. It is observed that the printability of EUV mask defects down to a pitch of 56 nm shows a trend of increased printability as the pitch of the printed pattern gets smaller - a well established trend at larger pitches of 80 nm and 104 nm, respectively. The sensitivity of state-of-the-art reticle inspection tools is greatly improved over that of the previous generation of tools. There appears to be no apparent decline in the sensitivity of these state-of-the-art reticle inspection tools for higher density (smaller) patterns on the mask, even down to 56nm pitch (1x). Preliminary results indicate that a blank defect density of the order of 0.25 defects/cm2 can support very early learning on EUV pilot line production at the 16nm node.

  8. Defect-dependent carrier transport behavior of polymer:ZnO composites/electrodeposited CdS/indium tin oxide devices

    SciTech Connect

    Lin, Yow-Jon You, C. F.

    2015-07-28

    Currents through the poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) and ZnO nanoparticles (PEDOT:PSS:ZnO)/CdS/indium tin oxide (ITO) hetero-structures are studied. The authors introduced the electrodeposition technique with sulfide treatment to improve the film quality of CdS. It is shown that sulfide treatment leads to a reduction in the number of donor-like defects (that is, sulfur vacancies and cadmium interstitials) in the CdS films, which leads to the conversion of carrier transport behavior from Poole-Frenkel emission to thermionic emission-diffusion for PEDOT:PSS:ZnO/CdS/ITO devices. A correlation is identified for providing a guide to control the current transport behavior of PEDOT:PSS:ZnO/CdS/ITO devices.

  9. Scanning electron microscope automatic defect classification of process induced defects

    NASA Astrophysics Data System (ADS)

    Wolfe, Scott; McGarvey, Steve

    2017-03-01

    With the integration of high speed Scanning Electron Microscope (SEM) based Automated Defect Redetection (ADR) in both high volume semiconductor manufacturing and Research and Development (R and D), the need for reliable SEM Automated Defect Classification (ADC) has grown tremendously in the past few years. In many high volume manufacturing facilities and R and D operations, defect inspection is performed on EBeam (EB), Bright Field (BF) or Dark Field (DF) defect inspection equipment. A comma separated value (CSV) file is created by both the patterned and non-patterned defect inspection tools. The defect inspection result file contains a list of the inspection anomalies detected during the inspection tools' examination of each structure, or the examination of an entire wafers surface for non-patterned applications. This file is imported into the Defect Review Scanning Electron Microscope (DRSEM). Following the defect inspection result file import, the DRSEM automatically moves the wafer to each defect coordinate and performs ADR. During ADR the DRSEM operates in a reference mode, capturing a SEM image at the exact position of the anomalies coordinates and capturing a SEM image of a reference location in the center of the wafer. A Defect reference image is created based on the Reference image minus the Defect image. The exact coordinates of the defect is calculated based on the calculated defect position and the anomalies stage coordinate calculated when the high magnification SEM defect image is captured. The captured SEM image is processed through either DRSEM ADC binning, exporting to a Yield Analysis System (YAS), or a combination of both. Process Engineers, Yield Analysis Engineers or Failure Analysis Engineers will manually review the captured images to insure that either the YAS defect binning is accurately classifying the defects or that the DRSEM defect binning is accurately classifying the defects. This paper is an exploration of the feasibility of the

  10. Supersymmetric k-defects

    DOE PAGES

    Koehn, Michael; Trodden, Mark

    2016-03-03

    In supersymmetric theories, topological defects can have nontrivial behaviors determined purely by whether or not supersymmetry is restored in the defect core. A well-known example of this is that some supersymmetric cosmic strings are automatically superconducting, leading to important cosmological effects and constraints. We investigate the impact of nontrivial kinetic interactions, present in a number of particle physics models of interest in cosmology, on the relationship between supersymmetry and supercurrents on strings. Furthermore, we find that in some cases it is possible for superconductivity to be disrupted by the extra interactions.

  11. Supersymmetric k-defects

    NASA Astrophysics Data System (ADS)

    Koehn, Michael; Trodden, Mark

    2016-04-01

    In supersymmetric theories, topological defects can have nontrivial behaviors determined purely by whether or not supersymmetry is restored in the defect core. A well-known example of this is that some supersymmetric cosmic strings are automatically superconducting, leading to important cosmological effects and constraints. We investigate the impact of nontrivial kinetic interactions, present in a number of particle physics models of interest in cosmology, on the relationship between supersymmetry and supercurrents on strings. We find that in some cases it is possible for superconductivity to be disrupted by the extra interactions.

  12. First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

    NASA Astrophysics Data System (ADS)

    Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

    2011-11-01

    Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

  13. Quantum computing with defects.

    PubMed

    Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

    2010-05-11

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

  14. Quantum computing with defects

    PubMed Central

    Weber, J. R.; Koehl, W. F.; Varley, J. B.; Janotti, A.; Buckley, B. B.; Van de Walle, C. G.; Awschalom, D. D.

    2010-01-01

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness—its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors. PMID:20404195

  15. Defects in flexoelectric solids

    NASA Astrophysics Data System (ADS)

    Mao, Sheng; Purohit, Prashant K.

    2015-11-01

    A solid is said to be flexoelectric when it polarizes in proportion to strain gradients. Since strain gradients are large near defects, we expect the flexoelectric effect to be prominent there and decay away at distances much larger than a flexoelectric length scale. Here, we quantify this expectation by computing displacement, stress and polarization fields near defects in flexoelectric solids. For point defects we recover some well known results from strain gradient elasticity and non-local piezoelectric theories, but with different length scales in the final expressions. For edge dislocations we show that the electric potential is a maximum in the vicinity of the dislocation core. We also estimate the polarized line charge density of an edge dislocation in an isotropic flexoelectric solid which is in agreement with some measurements in ice. We perform an asymptotic analysis of the crack tip fields in flexoelectric solids and show that our results share some features from solutions in strain gradient elasticity and piezoelectricity. We also compute the energy release rate for cracks using simple crack face boundary conditions and use them in classical criteria for crack growth to make predictions. Our analysis can serve as a starting point for more sophisticated analytic and computational treatments of defects in flexoelectric solids which are gaining increasing prominence in the field of nanoscience and nanotechnology.

  16. Analytic derivative couplings and first-principles exciton/phonon coupling constants for an ab initio Frenkel-Davydov exciton model: Theory, implementation, and application to compute triplet exciton mobility parameters for crystalline tetracene

    NASA Astrophysics Data System (ADS)

    Morrison, Adrian F.; Herbert, John M.

    2017-06-01

    Recently, we introduced an ab initio version of the Frenkel-Davydov exciton model for computing excited-state properties of molecular crystals and aggregates. Within this model, supersystem excited states are approximated as linear combinations of excitations localized on molecular sites, and the electronic Hamiltonian is constructed and diagonalized in a direct-product basis of non-orthogonal configuration state functions computed for isolated fragments. Here, we derive and implement analytic derivative couplings for this model, including nuclear derivatives of the natural transition orbital and symmetric orthogonalization transformations that are part of the approximation. Nuclear derivatives of the exciton Hamiltonian's matrix elements, required in order to compute the nonadiabatic couplings, are equivalent to the "Holstein" and "Peierls" exciton/phonon couplings that are widely discussed in the context of model Hamiltonians for energy and charge transport in organic photovoltaics. As an example, we compute the couplings that modulate triplet exciton transport in crystalline tetracene, which is relevant in the context of carrier diffusion following singlet exciton fission.

  17. Congenital heart defect - corrective surgery

    MedlinePlus

    ... repair; Tetralogy of Fallot repair; Coarctation of the aorta repair; Atrial septal defect repair; Ventricular septal defect ... the pulmonary valve and removing the thickened muscle (stenosis). Placing a patch on the right ventricle and ...

  18. Birth Defects Data and Statistics

    MedlinePlus

    ... this? Submit Button Information For… Media Policy Makers Data & Statistics Recommend on Facebook Tweet Share Compartir On ... of birth defects in the United States. For data on specific birth defects, please visit the specific ...

  19. Guidance for Preventing Birth Defects

    MedlinePlus

    ... Prevention. Commit to Healthy Choices to Help Prevent Birth Defects Language: English (US) Español (Spanish) Recommend on ... Tweet Share Compartir We know that not all birth defects can be prevented. But, we also know ...

  20. Atrial Septal Defect (For Parents)

    MedlinePlus

    ... Defect Preparing Your Child for Surgery Heart and Circulatory System Anesthesia Basics Congenital Heart Defects Activity: The Heart ... EKG (Video) Going to the Hospital Your Heart & Circulatory System Quiz: Heart & Circulatory System EKG (Video) What's It ...

  1. Neural tube defects.

    PubMed

    Greene, Nicholas D E; Copp, Andrew J

    2014-01-01

    Neural tube defects (NTDs), including spina bifida and anencephaly, are severe birth defects of the central nervous system that originate during embryonic development when the neural tube fails to close completely. Human NTDs are multifactorial, with contributions from both genetic and environmental factors. The genetic basis is not yet well understood, but several nongenetic risk factors have been identified as have possibilities for prevention by maternal folic acid supplementation. Mechanisms underlying neural tube closure and NTDs may be informed by experimental models, which have revealed numerous genes whose abnormal function causes NTDs and have provided details of critical cellular and morphological events whose regulation is essential for closure. Such models also provide an opportunity to investigate potential risk factors and to develop novel preventive therapies.

  2. Controversies in Parotid Defect Reconstruction.

    PubMed

    Tamplen, Matthew; Knott, P Daniel; Fritz, Michael A; Seth, Rahul

    2016-08-01

    Reconstruction of the parotid defect is a complex topic that encompasses restoration of both facial form and function. The reconstructive surgeon must consider facial contour, avoidance of Frey syndrome, skin coverage, tumor surveillance, potential adjuvant therapy, and facial reanimation when addressing parotid defects. With each defect there are several options within the reconstructive ladder, creating controversies regarding optimal management. This article describes surgical approaches to reconstruction of parotid defects, highlighting areas of controversy.

  3. Molecular defects in the chondrodysplasias

    SciTech Connect

    Rimoin, D.L.

    1996-05-03

    There has been a recent explosion of knowledge concerning the biochemical and molecular defects in the skeletal dysplasia. Through both the candidate gene approach and positional cloning, specific gene defects that produce the skeletal dysplasia have been identified and may be classified into several general categories: (1) qualitative or quantitative abnormalities in the structural proteins of cartilage; (2) inborn errors of cartilage metabolism; (3) defects in local regulators of cartilage growth; and (4) systemic defects influencing cartilage development. 35 refs., 1 tab.

  4. Composite Defect Significance.

    DTIC Science & Technology

    1982-07-13

    A12i 299 COMPOSITE DEFECT SIGNIFICANCE(U) MATERIALS SCIENCES 1/1 \\ CORP SPRING HOUSE PA S N CHATTERJEE ET AL. 13 JUL 82 MSC/TFR/1288/il87 NADC-80848...Directorate 30 Sensors & Avionics Technology Directorate 40 Communication & Navigation Technology Directorate 50 Software Computer Directorate 60 Aircraft ...instructions concerning commercial products herein do not constitute an endorsement by the Government nor do they convey or imply the license or right to use

  5. Defect mapping system

    DOEpatents

    Sopori, B.L.

    1995-04-11

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. 20 figures.

  6. Defect mapping system

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities.

  7. Defects at semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Henzler, Martin

    1985-04-01

    Low Energy Electron Diffraction (LEED) is widely used for detection of periodicity at the surface and of atom arrangement within the unit cell. Experiments and results, however, are increasing, which use the spot profile analysis (SPA-LEED) for the study of nonperiodic surfaces. Here the kinematical approximation provides a wider range of validity than expected. For semiconductors defects are especially important, since the surface states in the gap are determined or strongly influenced by almost any kind of defects at the surface. Atomic steps at the interface {Si}/{SiO2} have been shown to be correlated with many electronic properties of MOS devices like mobility, interface states and fixed charge. The epitaxy on Si and GaAs has been studied with LEED and RHEED, showing the density of the nuclei during formation of a layer and the layer-by-layer growth. The formation of metal suicides in the monolayer range is accompanied by many different superstructures and other rearrangements. It is demonstrated, that the new high resolution instruments provide additional qualitative and quantitative informations on any kind of surface defects.

  8. Mask Blank Defect Detection

    SciTech Connect

    Johnson, M A; Sommargren, G E

    2000-02-04

    Mask blanks are the substrates that hold the master patterns for integrated circuits. Integrated circuits are semiconductor devices, such as microprocessors (mPs), dynamic random access memory (DRAMs), and application specific integrated circuits (ASICs) that are central to the computer, communication, and electronics industries. These devices are fabricated using a set of master patterns that are sequentially imaged onto light-sensitive coated silicon wafers and processed to form thin layers of insulating and conductive materials on top of the wafer. These materials form electrical paths and transistors that control the flow of electricity through the device. For the past forty years the semiconductor industry has made phenomenal improvements in device functionality, compactness, speed, power, and cost. This progress is principally due to the exponential decrease in the minimum feature size of integrated circuits, which has been reduced by a factor of {radical}2 every three years. Since 1992 the Semiconductor Industry Association (SIA) has coordinated the efforts of producing a technology roadmap for semiconductors. In the latest document, ''The International Technology Roadmap for Semiconductors: 1999'', future technology nodes (minimum feature sizes) and targeted dates were specified and are summarized in Table 1. Lithography is the imaging technology for producing a de-magnified image of the mask on the wafer. A typical de-magnification factor is 4. Mask blank defects as small as one-eighth the equivalent minimum feature size are printable and may cause device failure. Defects might be the result of the surface preparation, such as polishing, or contamination due to handling or the environment. Table 2 shows the maximum tolerable defect sizes on the mask blank for each technology node. This downward trend puts a tremendous burden on mask fabrication, particularly in the area of defect detection and reduction. A new infrastructure for mask inspection will be

  9. Study of lattice defect vibration

    NASA Technical Reports Server (NTRS)

    Elliott, R. J.

    1969-01-01

    Report on the vibrations of defects in crystals relates how defects, well localized in a crystal but interacting strongly with the other atoms, change the properties of a perfect crystal. The methods used to solve defect problems relate the properties of an imperfect lattice to the properties of a perfect lattice.

  10. Chemical instability leads to unusual chemical-potential-independent defect formation and diffusion in perovskite solar cell material CH 3 NH 3 PbI 3

    DOE PAGES

    Ming, Wenmei; Chen, Shiyou; East China Normal Univ.; ...

    2016-10-13

    Methylammonium (MA) lead triiodide (MAPbI3) has recently emerged as a promising solar cell material. But, MAPbI3 is known to have chemical instability, i.e., MAPbI3 is prone to decomposition into MAI and PbI2 even at moderate temperatures (e.g. 330 K). Here, we show that the chemical instability, as reflected by the calculated negligible enthalpy of formation of MAPbI3 (with respect to MAI and PbI2), has an unusual and important consequence for defect properties, i.e., defect formation energies in low-carrier-density MAPbI3 are nearly independent of the chemical potentials of constituent elements and thus can be uniquely determined. This allows straightforward calculations of defect concentrations and the activation energy of ionic conductivity (the sum of the formation energy and the diffusion barrier of the charged mobile defect) in MAPbI3. Furthermore, the calculated activation energy for ionic conductivity due to Vmore » $$+\\atop{1}$$ diffusion is in excellent agreement with the experimental values, which demonstrates unambiguously that V$$+\\atop{1}$$ is the dominant diffusing defect and is responsible for the observed ion migration and device polarization in MAPbI3 solar cells. The calculated low formation energy of a Frenkel pair (V$$+\\atop{1}$$ -I$$-\\atop{i}$$ and low diffusion barriers of V$$+\\atop{1}$$ and Image I$$-\\atop{i}$$ suggest that the iodine ion migration and the resulting device polarization may occur even in single-crystal devices and grain-boundary-passivated polycrystalline thin film devices (which were previously suggested to be free from ion-migration-induced device polarization), leading to device degradation. Moreover, the device polarization due to the Frenkel pair (which has a relatively low concentration) may take a long time to develop and thus may avoid the appearance of the current–voltage hysteresis at typical scan rates.« less

  11. Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

    PubMed Central

    Kaes, Matthias; Salinga, Martin

    2016-01-01

    Storage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years. Attempts to model the conduction in the amorphous state of phase-change materials dominating the resistance of PRAM devices commonly invoke a connection to the electronic density-of-states (DoS) of the active material in form of a “distance between trap states s”. Here, we point out that s depends on the occupation of defects and hence on temperature. To verify this, we numerically study how the occupation in the DoS of Ge2Sb2Te5 is affected by changes of temperature and illumination. Employing a charge-transport model based on the Poole-Frenkel effect, we correlate these changes to the field- and temperature-dependent current-voltage characteristics of lateral devices of amorphous Ge2Sb2Te5, measured in darkness and under illumination. In agreement with our calculations, we find a pronounced temperature-dependence of s. As the device-current depends exponentially on the value of s, accounting for its temperature-dependence has profound impact on device modeling. PMID:27526783

  12. Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

    NASA Astrophysics Data System (ADS)

    Kaes, Matthias; Salinga, Martin

    2016-08-01

    Storage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years. Attempts to model the conduction in the amorphous state of phase-change materials dominating the resistance of PRAM devices commonly invoke a connection to the electronic density-of-states (DoS) of the active material in form of a “distance between trap states s”. Here, we point out that s depends on the occupation of defects and hence on temperature. To verify this, we numerically study how the occupation in the DoS of Ge2Sb2Te5 is affected by changes of temperature and illumination. Employing a charge-transport model based on the Poole-Frenkel effect, we correlate these changes to the field- and temperature-dependent current-voltage characteristics of lateral devices of amorphous Ge2Sb2Te5, measured in darkness and under illumination. In agreement with our calculations, we find a pronounced temperature-dependence of s. As the device-current depends exponentially on the value of s, accounting for its temperature-dependence has profound impact on device modeling.

  13. Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

    SciTech Connect

    Stübner, R.; Scheffler, L.; Kolkovsky, Vl. Weber, J.

    2016-05-28

    In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

  14. Thermal properties of defective fullerene

    NASA Astrophysics Data System (ADS)

    Li, Jian; Zheng, Dong-Qin; Zhong, Wei-Rong

    2016-09-01

    We have investigated the thermal conductivity of defective fullerene (C60) by using the nonequilibrium molecular dynamics (MD) method. It is found that the thermal conductivity of C60 with one defect is lower than the thermal conductivity of perfect C60. However, double defects in C60 have either positive or negative influence on the thermal conductivity, which depends on the positions of the defects. The phonon spectra of perfect and defective C60 are also provided to give corresponding supports. Our results can be extended to long C60 chains, which is helpful for the thermal management of C60.

  15. Topological Defects by Size Polydispersity

    NASA Astrophysics Data System (ADS)

    Yao, Zhenwei; Olvera de La Cruz, Monica

    2014-03-01

    The engineering of defects in crystalline matter introduces entirely new physical properties of materials. The fascinating possible applications of defects, known as topological defects, provide great motivations to perform fundamental investigations to uncover their role on the physical properties of various systems. Here we investigate topological defects in size polydispersity on flat surfaces. Our simulations show that in polydispersed systems topological defects play the role of order-restoring. The perfect hexagonal lattice beyond a small defective region around the impurity particle is well protected. Moreover, size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests the promising potential of size polydispersity to engineer defects in real systems. We thank the support of the Office of the Secretary of Defense under the NSSEFF program award number FA9550-10-1-0167.

  16. Insights into stability, electronic properties, defect properties and Li ions migration of Na, Mg and Al-doped LiVPO4F for cathode materials of lithium ion batteries: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Lv, Xiaojun; Xu, Zhenming; Li, Jie; Chen, Jiangan; Liu, Qingsheng

    2016-07-01

    The effects of Na, Mg and Al doping on the structure, electronic property, defect property and Li ions migration of LiVPO4F were investigated by the first-principles method. Calculations show that the processes of forming Li0.875Na0.125VPO4F, α- and β-LiMg0.375V0.75PO4F, α- and β-LiAl0.125V0.875PO4F are all feasible. Na, Mg and Al doping significantly improve the electrical conductivity of LiVPO4F and simultaneously maintain their structural stability attributing to the reduction of band gaps through variations of V-3d spin up orbitals. Li vacancy defects of LiVPO4F are not ignorable, and vacancy defects with a lower activation energy for Li atom are far more likely to occur than Frenkel defects for Li and vacancy defects for other atoms. For pristine LiVPO4F, path D along [0.012 0 . 17 ̅ 0.572] direction is found to have the lowest activation energy of 0.418 eV, suggesting that anisotropic nature of Li ion conduction and LiVPO4F is a one-dimensional (1D)-ion conductor. The corresponding diffusion coefficient was estimated to be 2.82×10-9 cm2/s, which is in good agreement with those experimental values.

  17. Single ventricle cardiac defect.

    PubMed

    Eren, Bulent; Turkmen, Nursel; Turkmen, Nurset; Fedakar, Recep; Senel, Berna; Cetin, Volkan; Cetin, Volkn

    2010-05-01

    Single ventricle heart is defined as a rare cardiac abnormality with a single ventricle chamber involving diverse functional and physiological defects. Our case is of a ten month-old baby boy who died shortly after admission to the hospital due to vomiting and diarrhoea. Autopsy findings revealed cyanosis of finger nails and ears. Internal examination revealed; large heart, weighing 60 grams, single ventricle, without a septum and upper membranous part. Single ventricle is a rare pathology, hence, this paper aims to discuss this case from a medico-legal point of view.

  18. Ultrasound anal sphincter defects and 3D anal pressure defects.

    PubMed

    Mion, F; Garros, A; Damon, H; Roman, S

    2017-04-13

    We read with interest the paper by Rezaie et al. on the use of 3D high definition anorectal manometry (3DARM) to detect anal sphincter defects in patients with faecal incontinence [1]. In their series of 39 patients, they described a new metrics to define anal pressure defect (defect of at least 18° of the 25 mmHg isobaric contour on anal resting pressures), and then compared the results of pressure defects determined by 3DARM and 3D anal ultrasound results. They found a rather good negative predictive value of manometry to eliminate the presence of ultrasound anal sphincter defects (92%), and suggested the possibility to use 3DARM to rule out anal sphincter defects and avoid the need of anal ultrasound in selected patients. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

  19. Thermo-enhanced field emission from ZnO nanowires: Role of defects and application in a diode flat panel X-ray source

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; Chen, Daokun; Chen, Wenqing; Chen, Yicong; Song, Xiaomeng; Zhan, Runze; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2017-03-01

    A thermo-enhanced field emission phenomenon was observed from ZnO nanowires. The field emission current increased by almost two orders of magnitude under a constant applied electric field, and the turn-on field decreased from 6.04 MV/m to 5.0 MV/m when the temperature increased from 323 to 723 K. The Poole-Frenkel electron excitation from the defect-induced trapping centers to the conduction band under high electric fields is believed to be the primary cause of the observed phenomenon. The experimental results fit well with the proposed physical model. The field emission from ZnO nanowires with different defect concentrations further confirmed the role of defects. Using the thermo-enhanced field emission phenomenon, a diode flat panel X-ray source was demonstrated, for which the energy and dose can be separately tuned. The thermo-enhanced field emission phenomenon observed from ZnO nanowires could be an effective way to realize a large area flat panel multi-energy X-ray source.

  20. [Congenital defects and incapacity].

    PubMed

    Jouve de la Barreda, Nicolás

    2009-01-01

    As a whole the congenital defects constitute an important section of the medical attention affecting near 3% of the population. A 15% of spontaneous abortions take place of which the greater frequency corresponds to the chromosome anomalies (25%) and the monogenic mutations (20%) and in a lesser extent to the effects of teratogenic agents. Between the genetic causes determining the congenital defects the mutations that affect genes acting in the early stages of development occupy a main place. These alterations can affect to homeotic genes or monogenic systems that act during the critical phases of the organogenesis. It seems evident that an alteration in the expression of a necessary gene for the appearance of a morphogenetic change constitutes the angular stone to understand resurging of a malformation or discapacity. In the last years has been demonstrated the importance of the teratogenic or environmental agents on the delicate internal physiological balance during the critical stages of the development. In this context must be included the inductive environmental factors inducing epigenetic modifications in the early stage of the development of the embryos produced by fertilization in vitro.

  1. Dipole defects in beryl

    NASA Astrophysics Data System (ADS)

    Holanda, B. A.; Cordeiro, R. C.; Blak, A. R.

    2010-11-01

    Dipole defects in gamma irradiated and thermally treated beryl (Be3Al2Si6O18) samples have been studied using the Thermally Stimulated Depolarization Currents (TSDC) technique. TSDC experiments were performed in pink (morganite), green (emerald), blue (aquamarine) and colourless (goshenite) natural beryl. TSDC spectra present dipole peaks at 190K, 220K, 280K and 310K that change after gamma irradiation and thermal treatments. In morganite samples, for thermal treatments between 700K and 1100K, the 280K peak increase in intensity and the band at 220K disappears. An increase of the 280K peak and a decrease of the 190K peak were observed in the TSDC spectra of morganite after a gamma irradiation of 25kGy performed after the thermal treatments. In the case of emerald samples, thermal treatments enhanced the 280K peak and gamma irradiation partially destroyed this band. The goshenite TSDC spectra present only one band at 280K that is not affected either by thermal treatments or by gamma irradiation. All the observed peaks are of dipolar origin because the intensity of the bands is linearly dependent on the polarization field, behaviour of dipole defects. The systematic study, by means of TSDC measurements, of ionizing irradiation effects and thermal treatments in these crystals makes possible a better understanding of the role played by the impurities in beryl crystals.

  2. Reconstruction of perineal defects

    PubMed Central

    Baker, RJ; Muneer, A; Mosahebi, A

    2013-01-01

    Introduction Perineal defects are commonly encountered in an oncological setting although they may also present as a result of trauma and infection (eg following Fournier’s gangrene). Reconstruction of these poses functional as well as aesthetic challenges. Skin coverage and tissue volume may both be required in addition to anogenital preservation or reconstruction. General prerequisites of an adequate reconstruction of perineal defects include provision of skin cover, well vascularised tissue to fill the dead space (reducing fluid collection and infection), vulvovaginal reconstruction and no faecal or urinary contamination. Methods A literature search was performed using PubMed and MEDLINE®. The search terms included ‘perineal defects’, ‘perineal reconstruction’, ‘perforator flaps for perineum’, ‘vulval flaps’, ‘secondary healing of wound’ and ‘vacuum assisted closure’. Backward chaining of reference lists from retrieved papers was also used to expand the search. Findings Modern developments have led to an increased expectation in improved quality of life as the main goal of reconstruction, therefore necessitating surgery with less morbidity and early return to normal activity. Progress in microsurgical procedures has been the main recent advance in perineal reconstruction and, in future, refinements in perforator flap design and tissue engineering techniques will lead to even better reconstructions. PMID:24165333

  3. Topological defects in extended inflation

    NASA Technical Reports Server (NTRS)

    Copeland, Edmund J.; Kolb, Edward W.; Liddle, Andrew R.

    1990-01-01

    The production of topological defects, especially cosmic strings, in extended inflation models was considered. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of bubbles when they collide. This mechanism allows a natural combination of inflation and large scale structure via cosmic strings.

  4. Who named the quantum defect?

    SciTech Connect

    Rau, A.R.P.; Inokuti, M.

    1997-08-01

    The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term quantum defect does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schroedinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. The authors present the early history of the quantum-defect idea, and sketch its recent developments.

  5. Defective endometrial receptivity.

    PubMed

    Revel, Ariel

    2012-05-01

    The endometrium is one of the most fascinating tissues in the human body. Its sole purpose is to enable implantation of an embryo during a relatively short window of opportunity in the menstrual cycle. It is becoming clear that overcoming the current bottleneck in improvements to assisted reproductive techniques will require a closer look at the interface between uterus and embryo. Indeed, embryo implantation requires a cross talk with a receptive endometrium. Using sonography, hysteroscopy and endometrial biopsy we can learn about anatomical and functional markers of endometrial receptivity. This article reviews the factors which might cause defective endometrial receptivity. These include uterine polyps, septa, leiomyomata and adhesions. The effect of thin endometrium, endometriosis and hydrosalpinx is also described. Finally contemporary investigation of molecular markers of endometrial receptivity is described. Improving embryo implantation by a closer look inside the uterus is the key to increasing pregnancy rates in IVF.

  6. Lumber defect detection by ultrasonics

    Treesearch

    K. A. McDonald

    1978-01-01

    Ultrasonics, the technology of high-frequency sound, has been developed as a viable means for locating most defects In lumber for use in digital form in decision-making computers. Ultrasonics has the potential for locating surface and internal defects in lumber of all species, green or dry, and rough sawn or surfaced.

  7. Calculating charged defects using CRYSTAL

    NASA Astrophysics Data System (ADS)

    Bailey, Christine L.; Liborio, Leandro; Mallia, Giuseppe; Tomić, Stanko; Harrison, Nicholas M.

    2010-07-01

    The methodology for the calculation of charged defects using the CRYSTAL program is discussed. Two example calculations are used to illustrate the methodology: He+ ions in a vacuum and two intrinsic charged defects, Cu vacancies and Ga substitution for Cu, in the chalcopyrite CuGaS2.

  8. Atrial Septal Defect (For Kids)

    MedlinePlus

    ... Dictionary of Medical Words En Español What Other Kids Are Reading 7 Videos: Kids Talk About Life Video: Am I Normal? (Girls ... Train Your Temper Atrial Septal Defect KidsHealth > For Kids > Atrial Septal Defect Print A A A What's ...

  9. Facts about Ventricular Septal Defect

    MedlinePlus

    ... the lungs forces the heart and lungs to work harder. Over time, if not repaired, this defect can increase the risk for other complications, including heart failure, high blood pressure in the lungs ... » Types of Ventricular Septal Defects Click here to ...

  10. First principles studies on the impact of point defects on the phase stability of (Al{sub x}Cr{sub 1−x}){sub 2}O{sub 3} solid solutions

    SciTech Connect

    Koller, C. M.; Koutná, N.; Ramm, J.; Kolozsvári, S.; Paulitsch, J.; Mayrhofer, P. H.; Holec, D.

    2016-02-15

    Density Functional Theory applying the generalised gradient approximation is used to study the phase stability of (Al{sub x}Cr{sub 1−x}){sub 2}O{sub 3} solid solutions in the context of physical vapour deposition (PVD). Our results show that the energy of formation for the hexagonal α phase is lower than for the metastable cubic γ and B1-like phases–independent of the Al content x. Even though this suggests higher stability of the α phase, its synthesis by physical vapour deposition is difficult for temperatures below 800 °C. Aluminium oxide and Al-rich oxides typically exhibit a multi-phased, cubic-dominated structure. Using a model system of (Al{sub 0.69}Cr{sub 0.31}){sub 2}O{sub 3} which experimentally yields larger fractions of the desired hexagonal α phase, we show that point defects strongly influence the energetic relationships. Since defects and in particular point defects, are unavoidably present in PVD coatings, they are important factors and can strongly influence the stability regions. We explicitly show that defects with low formation energies (e.g. metal Frenkel pairs) are strongly preferred in the cubic phases, hence a reasonable factor contributing to the observed thermodynamically anomalous phase composition.

  11. Antisite defects at oxide interfaces

    NASA Astrophysics Data System (ADS)

    Chen, Hanghui; Millis, Andrew

    We use ab initio calculations to estimate formation energies of cation (transition metal) antisite defects at oxide interfaces and to understand the basic physical effects that drive or suppress the formation of these defects. We find that antisite defects are favored in systems with substantial charge transfer across the interface, while Jahn-Teller distortions and itinerant ferromagnetism can prevent antisite defects and help stabilize atomically sharp interfaces. Our results enable identification of classes of systems that are more and less susceptible to the formation of antisite defects and motivate a range of experimental studies and further theoretical calculations to further explicate the oxide interface systems. This research was supported by National Science Foundation under Grant No. DMR-1120296 (H. Chen) and DOE-ER-046169 (A. J. Millis).

  12. Global topological k-defects

    SciTech Connect

    Babichev, E.

    2006-10-15

    We consider global topological defects in symmetry-breaking models with a noncanonical kinetic term. Apart from a mass parameter entering the potential, one additional dimensional parameter arises in such models - a kinetic mass. The properties of defects in these models are quite different from standard global domain walls, vortices, and monopoles, if their kinetic mass scale is smaller than their symmetry-breaking scale. In particular, depending on the concrete form of the kinetic term, the typical size of such a defect can be either much larger or much smaller than the size of a standard defect with the same potential term. The characteristic mass of a nonstandard defect, which might have been formed during a phase transition in the early universe, depends on both the temperature of a phase transition and the kinetic mass.

  13. Surface defects and chiral algebras

    DOE PAGES

    Córdova, Clay; Gaiotto, Davide; Shao, Shu-Heng

    2017-05-26

    Here, we investigate superconformal surface defects in four-dimensional N = 2 superconformal theories. Each such defect gives rise to a module of the associated chiral algebra and the surface defect Schur index is the character of this module. Various natural chiral algebra operations such as Drinfield-Sokolov reduction and spectral flow can be interpreted as constructions involving four-dimensional surface defects. We compute the index of these defects in the free hypermultiplet theory and Argyres-Douglas theories, using both infrared techniques involving BPS states, as well as renormalization group flows onto Higgs branches. We find perfect agreement with the predicted characters, in eachmore » case.« less

  14. Toward Intelligent Software Defect Detection

    NASA Technical Reports Server (NTRS)

    Benson, Markland J.

    2011-01-01

    Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

  15. Holographic Chern-Simons defects

    NASA Astrophysics Data System (ADS)

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

    2016-06-01

    We study SU( N ) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  16. Shaping solitons by lattice defects

    SciTech Connect

    Dong Liangwei; Ye Fangwei

    2010-11-15

    We demonstrate the existence of shape-preserving self-localized nonlinear modes in a two-dimensional photonic lattice with a flat-topped defect that covers several lattice sites. The balance of diffraction, defocusing nonlinearity, and optical potential induced by lattices with various forms of defects results in novel families of solitons featuring salient properties. We show that the soliton shape can be controlled by varying the shape of lattice defects. The existence domains of fundamental and vortex solitons in the semi-infinite gap expand with the defect amplitude. Vortex solitons in the semi-infinite gap with rectangular intensity distributions will break into dipole solitons when the propagation constant exceeds a critical value. In the semi-infinite and first-finite gaps, we find that lattices with rectangular defects can support stable vortex solitons which exhibit noncanonical phase structure.

  17. Holographic Chern-Simons defects

    SciTech Connect

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

    2016-06-28

    Here, we study SU(N ) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  18. Holographic Chern-Simons defects

    DOE PAGES

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; ...

    2016-06-28

    Here, we study SU(N ) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of themore » defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.« less

  19. Mask defect verification using actinic inspection and defect mitigation technology

    SciTech Connect

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Goldberg, Kenneth; Mochi, Iacopo; Gullikson, Eric

    2009-04-14

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMA TECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages.

  20. Simulation of temperature dependent dielectric breakdown in n{sup +}-polySi/SiO{sub 2}/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias

    SciTech Connect

    Samanta, Piyas Mandal, Krishna C.

    2016-08-14

    We present for the first time a thorough investigation of trapped-hole induced gate oxide deterioration and simulation results of time-dependent dielectric breakdown (TDDB) of thin (7–25 nm) silicon dioxide (SiO{sub 2}) films thermally grown on (0 0 0 1) silicon (Si) face of n-type 6H-silicon carbide (n-6H-SiC). Gate oxide reliability was studied during both constant voltage and current stress with positive bias on the degenerately doped n-type poly-crystalline silicon (n{sup +}-polySi) gate at a wide range of temperatures between 27 and 225 °C. The gate leakage current was identified as the Poole-Frenkel (PF) emission of electrons trapped at an energy 0.92 eV below the SiO{sub 2} conduction band. Holes were generated in the n{sup +}-polySi anode material as well as in the oxide bulk via band-to-band ionization depending on the film thickness t{sub ox} and the energy of the hot-electrons (emitted via PF mechanism) during their transport through oxide films at oxide electric fields E{sub ox} ranging from 5 to 10 MV/cm. Our simulated time-to-breakdown (t{sub BD}) results are in excellent agreement with those obtained from time consuming TDDB measurements. It is observed that irrespective of stress temperatures, the t{sub BD} values estimated in the field range between 5 and 9 MV/cm better fit to reciprocal field (1/E) model for the thickness range studied here. Furthermore, for a 10 year projected device lifetime, a good reliability margin of safe operating field from 8.5 to 7.5 MV/cm for 7 nm and 8.1 to 6.9 MV/cm for 25 nm thick SiO{sub 2} was observed between 27 and 225 °C.

  1. Holographic Experiments on Defects

    NASA Astrophysics Data System (ADS)

    Wapler, Matthias C.

    Using the AdS/CFT correspondence, we study the anisotropic charge transport properties of both supersymmetric and nonsupersymmetric matter fields on (2+1)-dimensional defects coupled to a (3+1)-dimensional { N} = 4 SYM "heat bath." We focus on the cases of a finite external background magnetic field, finite net charge density and finite mass and their combinations. In this context, we also discuss the limitations due to operator mixing that appears in a few situations and that we ignore in our analysis. At high frequencies, we discover a spectrum of quasiparticle resonances due to the magnetic field and finite density and at small frequencies, we perform a Drude-like expansion around the DC limit. Both of these regimes display many generic features and some features that we attribute to strong coupling, such as a minimum DC conductivity and an unusual behavior of the "cyclotron" and plasmon frequencies, which become related to the resonances found in the conformal case in an earlier paper. We further study the hydrodynamic regime and the relaxation properties, from which the system displays a set of different possible transitions to the collisionless regime. The mass dependence can be cast in two regimes: a generic relativistic behavior dominated by the UV and a nonlinear hydrodynamic behavior dominated by the IR. In the massless case, we furthermore extend earlier results from the literature to find an interesting selfduality under a transformation of the conductivity and the exchange of density and magnetic field.

  2. Biomaterials in periodontal osseous defects

    PubMed Central

    Lal, Nand; Dixit, Jaya

    2012-01-01

    Introduction Osseous defects in periodontal diseases require osseous grafts and guided tissue regeneration (GTR) using barrier membranes. The present study was undertaken with the objectives to clinically evaluate the osteogenic potential of hydroxyapatite (HA), cissus quadrangularis (CQ), and oxidized cellulose membrane (OCM) and compare with normal bone healing. Materials and Methods Twenty subjects with periodontitis in the age group ranging from 20 years to 40 years were selected from our outpatient department on the basis of presence of deep periodontal pockets, clinical probing depth ≥5 mm, vertical osseous defects obvious on radiograph and two- or three-walled involvement seen on surgical exposure. Infrabony defects were randomly divided into four groups on the basis of treatment to be executed, such that each group comprised 5 defects. Group I was control, II received HA, III received CQ and IV received OCM. Probing depth and attachment level were measured at regular months after surgery. Defects were re-exposed using crevicular incisions at 6 months. Results There was gradual reduction in the mean probing pocket depth in all groups, but highly significant in the site treated with HA. Gain in attachment level was higher in sites treated with HA, 3.2 mm at 6 months. Conclusion Hydroxyapatite and OCM showed good reduction in pocket depth, attachment level gain and osseous defect fill. Further study should be conducted by using a combination of HA and OCM in periodontal osseous defects with growth factors and stem cells. PMID:25756030

  3. Biomaterials in periodontal osseous defects.

    PubMed

    Lal, Nand; Dixit, Jaya

    2012-01-01

    Osseous defects in periodontal diseases require osseous grafts and guided tissue regeneration (GTR) using barrier membranes. The present study was undertaken with the objectives to clinically evaluate the osteogenic potential of hydroxyapatite (HA), cissus quadrangularis (CQ), and oxidized cellulose membrane (OCM) and compare with normal bone healing. Twenty subjects with periodontitis in the age group ranging from 20 years to 40 years were selected from our outpatient department on the basis of presence of deep periodontal pockets, clinical probing depth ≥5 mm, vertical osseous defects obvious on radiograph and two- or three-walled involvement seen on surgical exposure. Infrabony defects were randomly divided into four groups on the basis of treatment to be executed, such that each group comprised 5 defects. Group I was control, II received HA, III received CQ and IV received OCM. Probing depth and attachment level were measured at regular months after surgery. Defects were re-exposed using crevicular incisions at 6 months. There was gradual reduction in the mean probing pocket depth in all groups, but highly significant in the site treated with HA. Gain in attachment level was higher in sites treated with HA, 3.2 mm at 6 months. Hydroxyapatite and OCM showed good reduction in pocket depth, attachment level gain and osseous defect fill. Further study should be conducted by using a combination of HA and OCM in periodontal osseous defects with growth factors and stem cells.

  4. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  5. Microtubule defects & Neurodegeneration.

    PubMed

    Baird, Fiona J; Bennett, Craig L

    2013-12-06

    One of the major challenges facing the long term survival of neurons is their requirement to maintain efficient axonal transport over long distances. In humans as large, long-lived vertebrates, the machinery maintaining neuronal transport must remain efficient despite the slow accumulation of cell damage during aging. Mutations in genes encoding proteins which function in the transport system feature prominently in neurologic disorders. Genes known to cause such disorders and showing traditional Mendelian inheritance have been more readily identified. It has been more difficult, however, to isolate factors underlying the complex genetics contributing to the more common idiopathic forms of neurodegenerative disease. At the heart of neuronal transport is the rail network or scaffolding provided by neuron specific microtubules (MTs). The importance of MT dynamics and stability is underscored by the critical role tau protein plays in MT-associated stabilization versus the dysfunction seen in Alzheimer's disease, frontotemporal dementia and other tauopathies. Another example of the requirement for tight regulation of MT dynamics is the need to maintain balanced levels of post-translational modification of key MT building-blocks such as α-tubulin. Tubulins require extensive polyglutamylation at their carboxyl-terminus as part of a novel post-translational modification mechanism to signal MT growth versus destabilization. Dramatically, knock-out of a gene encoding a deglutamylation family member causes an extremely rapid cell death of Purkinje cells in the ataxic mouse model, pcd. This review will examine a range of neurodegenerative conditions where current molecular understanding points to defects in the stability of MTs and axonal transport to emphasize the central role of MTs in neuron survival.

  6. Self healing of defected graphene

    SciTech Connect

    Chen, Jianhui; Shi, Tuwan; Cai, Tuocheng; Wu, Xiaosong; Yu, Dapeng; Xu, Tao; Sun, Litao

    2013-03-11

    For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective.

  7. Chemical instability leads to unusual chemical-potential-independent defect formation and diffusion in perovskite solar cell material CH 3 NH 3 PbI 3

    SciTech Connect

    Ming, Wenmei; Chen, Shiyou; Du, Mao-Hua

    2016-10-13

    Methylammonium (MA) lead triiodide (MAPbI3) has recently emerged as a promising solar cell material. But, MAPbI3 is known to have chemical instability, i.e., MAPbI3 is prone to decomposition into MAI and PbI2 even at moderate temperatures (e.g. 330 K). Here, we show that the chemical instability, as reflected by the calculated negligible enthalpy of formation of MAPbI3 (with respect to MAI and PbI2), has an unusual and important consequence for defect properties, i.e., defect formation energies in low-carrier-density MAPbI3 are nearly independent of the chemical potentials of constituent elements and thus can be uniquely determined. This allows straightforward calculations of defect concentrations and the activation energy of ionic conductivity (the sum of the formation energy and the diffusion barrier of the charged mobile defect) in MAPbI3. Furthermore, the calculated activation energy for ionic conductivity due to V$+\\atop{1}$ diffusion is in excellent agreement with the experimental values, which demonstrates unambiguously that V$+\\atop{1}$ is the dominant diffusing defect and is responsible for the observed ion migration and device polarization in MAPbI3 solar cells. The calculated low formation energy of a Frenkel pair (V$+\\atop{1}$ -I$-\\atop{i}$ and low diffusion barriers of V$+\\atop{1}$ and Image I$-\\atop{i}$ suggest that the iodine ion migration and the resulting device polarization may occur even in single-crystal devices and grain-boundary-passivated polycrystalline thin film devices (which were previously suggested to be free from ion-migration-induced device polarization), leading to device degradation. Moreover, the device polarization due to the Frenkel pair (which has a relatively low concentration) may take a long time to develop and thus may avoid the appearance of the current–voltage hysteresis at typical scan rates.

  8. Care and Treatment for Congenital Heart Defects

    MedlinePlus

    ... Physical Activity Recommendations for Heart Health • Tools & Resources Web Booklets on Congenital Heart Defects These online publications ... to you or your child’s defect and concerns. Web Booklet: Adults With Congenital Heart Defects Web Booklet: ...

  9. Effects of defects in composite structures

    NASA Technical Reports Server (NTRS)

    Sendeckyj, G. P.

    1983-01-01

    The effect of defects in composite structures is addressed. Defects in laminates such as wrinkles, foreign particles, scratches and breaks are discussed. Effects of plygap plywaviness and machining defects are also studied.

  10. Reproduction and Survival After Cardiac Defect Repair

    ClinicalTrials.gov

    2016-02-17

    Cardiovascular Diseases; Heart Diseases; Defect, Congenital Heart; Aortic Valve Stenosis; Transposition of Great Vessels; Ductus Arteriosus, Patent; Heart Septal Defects, Atrial; Heart Septal Defects, Ventricular; Down Syndrome; Tetralogy of Fallot; Pulmonic Stenosis; Coarctation of Aorta

  11. Playing with defects in metals

    NASA Astrophysics Data System (ADS)

    Li, Xiuyan; Lu, K.

    2017-07-01

    Xiuyan Li and K. Lu discuss a strategy, alternative to alloying, to tailor the mechanical properties of metals. By engineering defects, metals with bespoke performance might be obtained while reducing the materials' compositional complexity.

  12. Atrial Septal Defect (For Kids)

    MedlinePlus

    ... wall called the septum that normally separates the blue and red blood. In a person with an atrial septal defect, there's an opening in that wall. This hole in the wall lets oxygen-rich blood from ...

  13. Sequential detection of web defects

    DOEpatents

    Eichel, Paul H.; Sleefe, Gerard E.; Stalker, K. Terry; Yee, Amy A.

    2001-01-01

    A system for detecting defects on a moving web having a sequential series of identical frames uses an imaging device to form a real-time camera image of a frame and a comparitor to comparing elements of the camera image with corresponding elements of an image of an exemplar frame. The comparitor provides an acceptable indication if the pair of elements are determined to be statistically identical; and a defective indication if the pair of elements are determined to be statistically not identical. If the pair of elements is neither acceptable nor defective, the comparitor recursively compares the element of said exemplar frame with corresponding elements of other frames on said web until one of the acceptable or defective indications occur.

  14. Atrial Septal Defect (For Teens)

    MedlinePlus

    ... septal defect (pronounced: AY-tree-ul SEP-tul DEE-fekt), or ASD for short, is sometimes referred ... can be treated with cardiac catheterization (pronounced: CAR-dee-ack cath-uh-turr-ih-ZAY-shun), in ...

  15. Congenital Heart Defects (For Parents)

    MedlinePlus

    ... heart, lungs, and blood vessels make up the circulatory system . The heart is the central pump of this ... Heart Defects Getting an EKG (Video) Your Heart & Circulatory System Heart Murmurs Mitral Valve Prolapse Movie: Heart & Circulatory ...

  16. Birth Defects Research and Tracking

    MedlinePlus

    ... this? Submit Button Information For… Media Policy Makers Research and Tracking Recommend on Facebook Tweet Share Compartir ... to help prevent them. Importance of Tracking and Research Tracking: Birth defects tracking systems identify babies born ...

  17. Congenital Heart Defects (For Parents)

    MedlinePlus

    ... heart, lungs, and blood vessels make up the circulatory system . The heart is the central pump of this ... Heart Defects Getting an EKG (Video) Your Heart & Circulatory System Heart Murmurs Mitral Valve Prolapse Movie: Heart & Circulatory ...

  18. Genital and Urinary Tract Defects

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  19. Congenital Heart Defects and CCHD

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  20. Low quantum defect laser performance

    NASA Astrophysics Data System (ADS)

    Bowman, Steven R.

    2017-01-01

    Low quantum defect lasers are possible using near-resonant optical pumping. This paper examines the laser material performance as the quantum defect of the laser is reduced. A steady-state model is developed, which incorporates the relevant physical processes in these materials and predicts extraction efficiency and waste heat generation. As the laser quantum defect is reduced below a few percent, the impact of fluorescence cooling must be included in the analysis. The special case of a net zero quantum defect laser is examined in detail. This condition, referred to as the radiation balance laser (RBL), is shown to provide two orders of magnitude lower heat generation at the cost of roughly 10% loss in extraction efficiency. Numerical examples are presented with the host materials Yb:YAG and Yb:Silica. The general conditions, which yield optimal laser efficiency, are derived and explored.

  1. Stable line defects in silicene

    NASA Astrophysics Data System (ADS)

    Ghosh, Dibyajyoti; Parida, Prakash; Pati, Swapan K.

    2015-11-01

    Line defects in two-dimensional (2D) materials greatly modulate various properties of their pristine form. Using ab initio molecular dynamics (AIMD) simulations, we investigate the structural reconstructions of different kinds of grain boundaries in the silicene sheets. It is evident that depending upon the presence of silicon adatoms and edge shape of grain boundaries (i.e., armchair or zigzag), stable extended line defects (ELDs) can be introduced in a controlled way. Further studies show the stability of these line-defects in silicene, grown on Ag(111) surface at room-temperature. Importantly, unlike most of the 2D sheet materials such as graphene and hexagonal boron nitride, 5-5-8 line defects modify the nonmagnetic semimetallic pristine silicene sheet to spin-polarized metal. As ferromagnetically ordered magnetic moments remain strongly localized at the line defect, a one-dimensional spin channel gets created in silicene. Interestingly, these spin channels are quite stable because, unlike the edge of nanoribbons, structural reconstruction or contamination cannot destroy the ordering of magnetic moments here. Zigzag silicene nanoribbons with a 5-5-8 line defect also exhibit various interesting electronic and magnetic properties depending upon their width as well as the nature of the magnetic coupling between edge and defect spin states. Upon incorporation of other ELDs, such as 4-4-4 and 4-8 defects, 2D sheets and nanoribbons of silicene show a nonmagnetic metallic or semiconducting ground state. Highlighting the controlled formation of ELDs and consequent emergence of technologically important properties in silicene, we propose new routes to realize silicene-based nanoelectronic and spintronic devices.

  2. Intrauterine infections and birth defects.

    PubMed

    Zheng, Xiao-Ying; Zhang, Ting; Wang, Yi-Fei; Xu, Chen; Chen, Gong; Xin, Ruo-Lei; Chen, Jia-Peng; Hu, Xu-Mei; Yang, Qing; Song, Xin-Ming; Pang, Li-Hua; Ji, Ying; Sun, Hong-Mei; Zhang, Lei; Liu, Ju-Fen; Guo, Yan-Ling; Zhang, Yan

    2004-12-01

    Intrauterine infection is an important cause of some birth defects worldwide. The most common pathogens include rubella virus, cytomegaloviurs, ureaplasma urealyticum, toxoplasma, etc. General information about these pathogens in epidemiology, consequence of birth defects, and the possible mechanisms in the progress of birth defects, and the interventions to prevent or treat these pathogens' infections are described. The infections caused by rubella virus, cytomegaloviurs, ureaplasma urealyticum, toxoplasma, etc. are common, yet they are proved to be fatal during the pregnant period, especially during the first trimester. These infections may cause sterility, abortion, stillbirth, low birth weight, and affect multiple organs that may induce loss of hearing and vision, even fetal deformity and the long-term effects. These pathogens' infections may influence the microenvironment of placenta, including levels of enzymes and cytokines, and affect chondriosome that may induce the progress of birth defect. Early diagnosis of infections during pregnancy should be strengthened. There are still many things to be settled, such as the molecular mechanisms of birth defects, the effective vaccines to certain pathogens. Birth defect researches in terms of etiology and the development of applicable and sensitive pathogen detection technology and methods are imperative.

  3. Topological defects from the multiverse

    SciTech Connect

    Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  4. Topological defects from the multiverse

    SciTech Connect

    Zhang, Jun; Vilenkin, Alexander; Blanco-Pillado, Jose J.

    2015-05-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  5. Repairing native defects on EUV mask blanks

    NASA Astrophysics Data System (ADS)

    Lawliss, Mark; Gallagher, Emily; Hibbs, Michael; Seki, Kazunori; Isogawa, Takeshi; Robinson, Tod; LeClaire, Jeff

    2014-10-01

    Mask defectivity is a serious problem for all lithographic masks, but especially for EUV masks. Defects in the EUV blank are particularly challenging because their elimination is beyond control of the mask fab. If defects have been identified on a mask blank, patterns can be shifted to place as many blank defects as possible in regions where printing impact will be eliminated or become unimportant. For those defects that cannot be mitigated through pattern shift, repair strategies must be developed. Repairing defects that occur naturally in the EUV blank is challenging because the printability of these defects varies widely. This paper describes some types of native defects commonly found and begins to outline a triage strategy for defects that are identified on the blank. Sample defects best suited to nanomachining repair are treated in detail: repairs are attempted, characterized using mask metrology and then tested for printability. Based on the initial results, the viability of repairing EUV blank native defects is discussed.

  6. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    SciTech Connect

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-11-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

  7. Effect of Native Defects on Transport Properties in Non-Stoichiometric CoSb3

    PubMed Central

    Realyvázquez-Guevara, Paula R.; Rivera-Gómez, Francisco J.; Faudoa-Arzate, Alejandro; Botello-Zubiate,  María E.; Sáenz-Hernández, Renee J.; Santillán-Rodríguez, Carlos R.; Matutes-Aquino, José A.

    2017-01-01

    The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the  I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2). PMID:28772648

  8. Effect of Native Defects on Transport Properties in Non-Stoichiometric CoSb₃.

    PubMed

    Realyvázquez-Guevara, Paula R; Rivera-Gómez, Francisco J; Faudoa-Arzate, Alejandro; Botello-Zubiate, María E; Sáenz-Hernández, Renee J; Santillán-Rodríguez, Carlos R; Matutes-Aquino, José A

    2017-03-14

    The effect of native defects originated by a non-stoichiometric variation of composition in CoSb₃ on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the  I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb₃ is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb₃ presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 10(18) cm(-3) and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm²/V·s, and the high effective mass of the electrons, 0.66 m₀, caused a high resistivity value of 2.75 × 10(-3) Ω·m. The calculated Lorenz factor was 1.50 × 10(-8) V²/K², which represents a decrease of 38% over the degenerate limit value (2.44 × 10(-8) V²/K²).

  9. Defects formation and wave emitting from defects in excitable media

    NASA Astrophysics Data System (ADS)

    Ma, Jun; Xu, Ying; Tang, Jun; Wang, Chunni

    2016-05-01

    Abnormal electrical activities in neuronal system could be associated with some neuronal diseases. Indeed, external forcing can cause breakdown even collapse in nervous system under appropriate condition. The excitable media sometimes could be described by neuronal network with different topologies. The collective behaviors of neurons can show complex spatiotemporal dynamical properties and spatial distribution for electrical activities due to self-organization even from the regulating from central nervous system. Defects in the nervous system can emit continuous waves or pulses, and pacemaker-like source is generated to perturb the normal signal propagation in nervous system. How these defects are developed? In this paper, a network of neurons is designed in two-dimensional square array with nearest-neighbor connection type; the formation mechanism of defects is investigated by detecting the wave propagation induced by external forcing. It is found that defects could be induced under external periodical forcing under the boundary, and then the wave emitted from the defects can keep balance with the waves excited from external forcing.

  10. Defect chemistry of La{sub 2}Ni{sub 1{minus}x}M{sub x}O{sub 4} (M = Mn, Fe, Co, Cu): Relevance to catalytic behavior

    SciTech Connect

    Read, M.S.D.; Islam, M.S.; King, F.; Hancock, F.E.

    1999-03-04

    Atomistic computer simulation techniques are used to investigate the defect properties of the La{sub 2}Ni{sub 1{minus}x}M{sub x}O{sub 4} (M = Mn, Fe, Co, Cu) layered perovskite which are related to the mode of operation of the catalyst. The theoretical techniques are based upon efficient energy minimization procedures and Mott-Littleton methodology for accurate defect modeling. Effective ionic pairwise interatomic potentials correctly reproduce the tetragonal crystal structure. The formation energy of intrinsic atomic defects of the Schottky and Frenkel type are not particularly favorable. The oxidation of La{sub 2}NiO{sub 4+{delta}} was found to be an exothermic process with charge compensation occurring via hole formation preferentially on the Ni site. The highest solubility, for a range of dopants, is calculated for Sr and Ca, in accord with observation. Hole formation was most favorable for Mn > Fe > Co > Ni(undoped) > Cu, demonstrating that Mn and Fe enhance Ni(III) hole formation, which is believed to be an important factor in the observed catalytic activity.

  11. Photo-induced Defects in Semiconductors

    NASA Astrophysics Data System (ADS)

    Redfield, David; Bube, Richard H.

    2006-03-01

    1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.

  12. Effective actions for bosonic topological defects

    NASA Technical Reports Server (NTRS)

    Gregory, Ruth

    1990-01-01

    A gauge field theory is considered which admits p-dimensional topological defects, expanding the equations of motion in powers of the defect thickness. In this way an effective action and effective equation of motion is derived for the defect in terms of the coordinates of the p-dimensional worldsurface defined by the history of the core of the defect.

  13. Defect CFTs and holographic multiverse

    SciTech Connect

    Fiol, Bartomeu

    2010-07-01

    We investigate some aspects of a recent proposal for a holographic description of the multiverse. Specifically, we focus on the implications on the suggested duality of the fluctuations of a bubble separating two universes with different cosmological constants. We do so by considering a similar problem in a 2+1 CFT with a codimension one defect, obtained by an M5-brane probe embedding in AdS{sub 4} × S{sup 7}, and studying its spectrum of fluctuations. Our results suggest that the kind of behavior required by the spectrum of bubble fluctuations is not likely to take place in defect CFTs with an AdS dual, although it might be possible if the defect supports a non-unitary theory.

  14. Actin cytoskeletal defects in immunodeficiency

    PubMed Central

    Moulding, Dale A; Record, Julien; Malinova, Dessislava; Thrasher, Adrian J

    2013-01-01

    The importance of the cytoskeleton in mounting a successful immune response is evident from the wide range of defects that occur in actin-related primary immunodeficiencies (PIDs). Studies of these PIDs have revealed a pivotal role for the actin cytoskeleton in almost all stages of immune system function, from hematopoiesis and immune cell development, through to recruitment, migration, intercellular and intracellular signaling, and activation of both innate and adaptive immune responses. The major focus of this review is the immune defects that result from mutations in the Wiskott-Aldrich syndrome gene (WAS), which have a broad impact on many different processes and give rise to clinically heterogeneous immunodeficiencies. We also discuss other related genetic defects and the possibility of identifying new genetic causes of cytoskeletal immunodeficiency. PMID:24117828

  15. Congenital heart defects and medical imaging.

    PubMed

    Gehin, Connie; Ragsdale, Lisa

    2013-01-01

    Radiologic technologists perform imaging studies that are useful in the diagnosis of congenital heart defects in infants and adults. These studies also help to monitor congenital heart defect repairs in adults. This article describes the development and functional anatomy of the heart, along with the epidemiology and anatomy of congenital heart defects. It also discusses the increasing population of adults who have congenital heart defects and the most effective modalities for diagnosing, evaluating, and monitoring congenital heart defects.

  16. Environmental causes of enamel defects.

    PubMed

    Brook, A H; Fearne, J M; Smith, J M

    1997-01-01

    A large number of causes of enamel defects, both environmental and genetic, have been described. However, many of these are derived from case histories and studies of individual conditions. What is needed now is a systematic investigation of the problem. The first requirement in exploring the aetiology further is the standardization of both the clinical diagnosis and the descriptive terminology. This has been provided by the Fédération Dentaire Internationale Developmental Defects of Enamel Index. Comparing studies using standardized methods, including this index, has highlighted areas for closer investigation. The total prevalence of enamel defects in a population needs to be established as a baseline for studies on aetiology. Sixty-eight per cent of 1518 school children in London have enamel defects in the permanent dentition, with 10.5% having 10 or more teeth affected and 14.6% having hypoplasia, i.e. missing enamel. These findings are in contrast to the 37% with hypoplasia found in a group of third to fifth century Romano-Britons from Dorset, England, suggesting further consideration of possible environmental and genetic differences between the two populations. An overall long-term study of dental development in low birth weight children has shown significantly more (P < 0.001) enamel defects related to major health problems during the neonatal period. By using standardized, reproducible criteria in prevalence studies to gain an overview of the problem and then studying specific groups or conditions, it is possible to identify general and specific factors in the aetiology of enamel defects and investigate further the varying role of genetic and environmental effects.

  17. Interface effects on calculated defect levels for oxide defects

    NASA Astrophysics Data System (ADS)

    Edwards, Arthur; Barnaby, Hugh; Schultz, Peter; Pineda, Andrew

    2014-03-01

    Density functional theory (DFT) has had impressive recent success predicting defect levels in insulators and semiconductors [Schultz and von Lillienfeld, 2009]. Such success requires care in accounting for long-range electrostatic effects. Recently, Komsa and Pasquarello have started to address this problem in systems with interfaces. We report a multiscale technique for calculating electrostatic energies for charged defects in oxide of the metal-oxide-silicon (MOS) system, but where account is taken of substrate doping density, oxide thickness, and gate bias. We use device modeling to calculate electric fields for a point charge a fixed distance from the interface, and used the field to numerically calculate the long-range electrostatic interactions. We find, for example, that defect levels in the oxide do depend on both the magnitude and the polarity the substrate doping density. Furthermore, below 20 Å, oxide thickness also has significant effects. So, transferring results directly from bulk calculations leads to inaccuracies up to 0.5 eV- half of the silicon band gap. We will present trends in defect levels as a function of device parameters. We show that these results explain previous experimental results, and we comment on their potential impact on models for NBTI. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the United States Department of Energy's National Nuclear Security Administration under co.

  18. Defects in metals. [Positron annihilation spectroscopy

    SciTech Connect

    Siegel, R.W.

    1982-06-01

    The application of positron annihilation spectroscopy (PAS) to the study of defects in metals has led to increased knowledge on lattice-defect properties during the past decade in two areas: the determination of atomic defect properties, particularly those of monovacancies, and the monitoring and characterization of vacancy-like microstructure development during post-irradiation and post-quench annealing. The study of defects in metals by PAS is reviewed within the context of the other available techniques for defect studies. The strengths and weaknesses of PAS as a method for the characterization of defect microstructures are considered. The additional possibilities for using the positron as a localized probe of the atomic and electronic structures of atomic defects are discussed, based upon theoretical calculations of the annihilation characteristics of defect-trapped positrons and experimental observations. Finally, the present status and future potential of PAS as a tool for the study of defects in metals is considered. 71 references, 9 figures.

  19. Facts about Atrial Septal Defect

    MedlinePlus

    ... Developmental Disabilities) be credited and notified in any public or private usage of this image. Close × Atrial Septal Defect The images are ... Developmental Disabilities) be credited and notified in any public or private usage of this image. Close Information For... ... Makers Language: English ...

  20. Photographic Screening for Eye Defects

    NASA Technical Reports Server (NTRS)

    Richardson, J.

    1985-01-01

    Images of retinas examined for characteristic patterns. Color photographs of retinas taken. Proper alinement of eye obtained by asking subject to gaze at light-emitting diode. "Red-eye" patterns in resulting color photographs examined by trained observers for signs of ocular defects. System used to check power of contact lenses and eyeglasses by taking photographs with these items in place.

  1. Birth Defects and Adolescent Pregnancies

    ERIC Educational Resources Information Center

    Walters, James

    1975-01-01

    Home economists who work with adolescents can help prepare them for responsible parenthood later in life by explaining the known causes of various birth defects; providing basic information about human genetics, prenatal nutrition, and drug and alcohol effects; and motivating adolescents to exercise increased responsibility in their sexual…

  2. Water chlorination and birth defects.

    PubMed

    Magnus, P; Jaakkola, J J; Skrondal, A; Alexander, J; Becher, G; Krogh, T; Dybing, E

    1999-09-01

    Chlorination of drinking water that contains organic compounds leads to the formation of by-products, some of which have been shown to have mutagenic or carcinogenic effects. As yet, too little is known about the possible teratogenic effects on the human fetus. We linked the Norwegian waterwork registry, containing 1994 data on chlorination practice and color (an indicator for natural organic matter), with the Medical Birth Registry for 1993-1995. The proportion of the population exposed to chlorination and a weighted mean color number in drinking water was computed for each municipality. Among 141,077 births, 2,608 (1.8%) had birth defects. In a comparison between exposed (high color; chlorination) and reference groups (low color; no chlorination), the adjusted odds ratio was 1.14 (0.99-1.31) for any malformation, 1.26 (0.61-2.62) for neural tube defects, and 1.99 (1.10-3.57) for urinary tract defects. This study provides further evidence of the role of chlorination of humic water as a potential cause of birth defects, in a country with relatively low levels of chlorination byproducts.

  3. Photographic Screening for Eye Defects

    NASA Technical Reports Server (NTRS)

    Richardson, J.

    1985-01-01

    Images of retinas examined for characteristic patterns. Color photographs of retinas taken. Proper alinement of eye obtained by asking subject to gaze at light-emitting diode. "Red-eye" patterns in resulting color photographs examined by trained observers for signs of ocular defects. System used to check power of contact lenses and eyeglasses by taking photographs with these items in place.

  4. Genetic defects of iron transport.

    PubMed

    Bannerman, R M

    1976-09-01

    Five genetic traits in man and laboratory animals have major effects on iron transport. The heterogeneous condition, hemochromatosis, in some families appears to segregate as a Mendelian trait, and is associated with defective control of intestinal iron absorption. In the very rare human autosomal recessive trait, atransferrinemia, there is an almost total lack of transferrin and gross maldistribution of iron through the body. In mice, sex-linked anemia (an X-linked recessive trait) causes iron deficiency through defective iron absorption, at the "exit" step; a similar defect probably exists in placental iron transfer. In microcytic anemia of mice, an autosomal recessive trait, iron absorption is also impaired because of a defect of iron entry into cells, which is probably generalized. Belgrade rat anemia, less understood at present, also may involve a major disorder of iron metabolism. Study of these mutations has provided new knowledge of iron metabolism and its genetic control Their phenotypic interaction with nutritional factors, especially the form and quantity of iron in the diet, may provide new insights for the study of nutrition.

  5. Delamination initiated by a defect

    NASA Astrophysics Data System (ADS)

    Biel, A.; Toftegaard, H.

    2016-07-01

    Composite materials in wind turbines are mainly joined with adhesives. Adhesive joining is preferable since it distributes the stresses over a larger area. This study shows how a defect can influence the fracture behaviour of adhesively joined composite. Repeated experiments are performed using double cantilever beam specimens loaded with bending moments. The specimens consist of two 8 mm thick GFRP-laminates which are joined by a 3 mm thick epoxy adhesive. A thin foil close to one of the laminates is used to start the crack. For some of the specimens a defect is created by an initial load-unload operation. During this operation, a clamp is used in order to prevent crack propagation in the main direction. For the specimens without defect, the crack propagates in the middle of the adhesive layer. For the specimens with defect, the crack directly deviates into the laminate. After about 25 mm propagation in the laminate, the crack returns to the adhesive. Compared to the adhesive the fracture energy for the laminate is significantly higher.

  6. Facts about Congenital Heart Defects

    MedlinePlus

    ... into the heart, where a doctor can take measurements and pictures, do tests, or repair the problem. Sometimes the heart defect can’t be fully repaired, but these procedures can improve blood flow and the way the heart works. Causes The ...

  7. Birth Defects and Adolescent Pregnancies

    ERIC Educational Resources Information Center

    Walters, James

    1975-01-01

    Home economists who work with adolescents can help prepare them for responsible parenthood later in life by explaining the known causes of various birth defects; providing basic information about human genetics, prenatal nutrition, and drug and alcohol effects; and motivating adolescents to exercise increased responsibility in their sexual…

  8. Ultrasonics Studies of Point Defects in Iron, Aluminum-Lithium and Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Igarashi, Brian

    The ultrasonics studies undertaken in this work illustrate the applicability of ultrasonics to a broad variety of problems. In the case of Fe, the objective is to measure the production and annealing of the diaelastic effect of self-interstitials in Fe. Frenkel Pairs created by 2.3 MeV electron bombardment cause the shear moduli, rm C^' and C _{44}, to soften by (rm -27+/-2)% and (-17+/-4)%, per at.% pair. The magnitudes are of the same order as for Cu, but the observed anisotropy matches that detected in Mo, the only other bcc metal tested. Measurements in an AlLi alloy provide an opportunity to test the first predictions of configurations of point defects derived from first-principles calculations. An Al self-interstitial trapped by a Li atom is predicted to form a complex with trigonal symmetry; however, ultrasonic measurements of an AlLi alloy irradiated by 2.3 MeV electrons give strong evidence that the complex is a mixed dumbbell with tetragonal symmetry. A C^' relaxation peak occurs at ~20.5 K, but no C_{44} relaxation is observed between 2 K and 180 K. Subsequent experiments with Fe added to the alloy demonstrate that the mixed dumbbell migrates as an intact unit between 80 K and 130 K, and it dissociates at 200 K. Cr^{3+} in GaAs has been shown by several thermal conductivity and electron paramagnetic resonance studies to yield a <110 >-orthorhombic Jahn-Teller distortion, but ultrasonic data about this defect is limited. Present ultrasonic measurements of an illuminated sample show that Cr^{3+} gives both C ^' and C_{44 } relaxations. A tunneling model of Cr ^{3+} is developed to account for the 1/T-dependencies of the direct process relaxation rate and relaxation modulus softenings. The model also yields estimates of the Jahn-Teller coefficients of Cr ^{3+}, | V_ {E}| = 4.6 eV/A and | V_{T}| = 1.6 eV/A..

  9. Instabilities, defects, and defect ordering in an overdamped active nematic†

    PubMed Central

    Putzig, Elias; Redner, Gabriel S.; Baskaran, Arvind; Baskaran, Aparna

    2016-01-01

    We consider a phenomenological continuum theory for an extensile, overdamped active nematic liquid crystal, applicable in the dense regime. Constructed from general principles, the theory is universal, with parameters independent of any particular microscopic realization. We show that it exhibits two distinct instabilities, one of which arises due to shear forces, and the other due to active torques. Both lead to the proliferation of defects. We focus on the active torque bend instability and find three distinct nonequilibrium steady states including a defect-ordered nematic in which +12 disclinations develop polar ordering. We characterize the phenomenology of these phases and identify the relationship of this theoretical description to experimental realizations and other theoretical models of active nematics. PMID:26983376

  10. Predicting internal red oak (Quercus rubra) log defect features using surface defect defect measurements

    Treesearch

    R. Edward. Thomas

    2013-01-01

    Determining the defects located within a log is crucial to understanding the tree/log resource for efficient processing. However, existing means of doing this non-destructively requires the use of expensive x-ray/CT (computerized tomography), MRI (magnetic resonance imaging), or microwave technology. These methods do not lend themselves to fast, efficient, and cost-...

  11. Defect-related properties of optical coatings

    NASA Astrophysics Data System (ADS)

    Cheng, Xinbin; Wang, Zhanshan

    2014-02-01

    Defects in optical coatings are a major factor degrading their performance. Based on the nature of defects, we classified them into two categories: visible defects and non-visible defects. Visible defects result from the replication of substrate imperfections or particulates within the coatings by subsequent layers and can increase scattering loss, produce critical errors in extreme ultraviolet lithography, weaken mechanical and environmental stability, and reduce laser damage resistance. Non-visible defects mainly involve a decrease in laser damage resistance but typically have no influence on other properties of optical coatings. In the case of widely used HfO2/SiO2 dielectric coatings, metallic Hf nano-clusters, off-stoichiometric HfO2 nano-clusters, or areas of high-density electronic defects have been postulated as possible sources for non-visible defects. The emphasis of this review is devoted to discussing localized defect-driven laser-induced damage (LID) in optical coatings used for nanosecond-scale pulsed laser applications, but consideration is also given to other properties of optical coatings such as scattering, environmental stability, etc. The low densities and diverse properties of defects make the systematic study of LID initiating from localized defects time-consuming and very challenging. Experimental and theoretical studies of localized defect-driven LID using artificial defects whose properties can be well controlled are highlighted.

  12. Engaging Hill-Sachs Defects

    PubMed Central

    Burns, David; Chahal, Jaskarndip; Shahrokhi, Shahram; Henry, Patrick; Wasserstein, David; Whyne, Cari; Theodoropoulos, John S.; Ogilvie-Harris, Darrell; Dwyer, Tim

    2016-01-01

    Objectives: Anatomic studies have demonstrated that bipolar glenoid and humeral bone loss have a cumulative impact on shoulder instability, and that these defects may engage in functional positions depending on their size, location, and orientation, potentially resulting in failure of stabilization procedures. Determining which lesions pose a risk for engagement remains a challenge, with arthroscopic assessment and Itoi’s 3DCT based glenoid track method being the accepted approaches at this time. The purpose of this study was to investigate the interaction of humeral and glenoid bone defects on shoulder engagement in a cadaveric model. Two alternative approaches to predicting engagement were evaluated; 1) CT scanning the shoulder in abduction and external rotation 2) measurement of Bankart lesion width and a novel parameter, the intact anterior articular angle (IAAA), on conventional 2D multi-plane reformats. The results of these two approaches were compared to the results obtained using Itoi’s glenoid track method for predicting engagement. Methods: Hill-Sachs and Bony Bankart defects of varying size were created in 12 cadaveric upper limbs, producing 45 bipolar defect combinations. The shoulders were assessed for engagement using cone beam CT in various positions of function, from 30 to 90 degrees of both abduction and external rotation. The humeral and glenoid defects were characterized by measurement of their size, location, and orientation. Diagnostic performance measures for predicting engagement were calculated for both the abduction external rotation scan and 2D IAAA approaches using the glenoid track method as reference standard. Results: Engagement was predicted by Itoi’s glenoid track method in 24 of 45 specimens (53%). The abduction external rotation CT scan performed at 60 degrees of glenohumeral abduction (corresponding to 90 degrees of abduction relative to the trunk) and 90 degrees of external rotation predicted engagement accurately in 43 of

  13. 7 CFR 52.780 - Defects.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... United States Standards for Grades of Canned Red Tart Pitted Cherries 1 Factors of Quality § 52.780 Defects. (a) General. The factor of defects refers to the degree of freedom from harmless extraneous...

  14. 7 CFR 52.780 - Defects.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... United States Standards for Grades of Canned Red Tart Pitted Cherries 1 Factors of Quality § 52.780 Defects. (a) General. The factor of defects refers to the degree of freedom from harmless extraneous...

  15. 7 CFR 51.2659 - Condition defects.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Standards for Grades for Sweet Cherries 1 Definitions § 51.2659 Condition defects. Condition defects means... soft cherries and such factors as pitting, shriveling, sunken areas, brown discoloration and...

  16. Atrioventricular canal (endocardial cushion defect) (image)

    MedlinePlus

    Endocardial cushion defect is an abnormal heart condition which occurs during the development of the baby. In this condition ... mix causing the heart to work harder. Endocardial cushion defect is strongly associated with several genetic abnormalities.

  17. Automatic classification of blank substrate defects

    NASA Astrophysics Data System (ADS)

    Boettiger, Tom; Buck, Peter; Paninjath, Sankaranarayanan; Pereira, Mark; Ronald, Rob; Rost, Dan; Samir, Bhamidipati

    2014-10-01

    Mask preparation stages are crucial in mask manufacturing, since this mask is to later act as a template for considerable number of dies on wafer. Defects on the initial blank substrate, and subsequent cleaned and coated substrates, can have a profound impact on the usability of the finished mask. This emphasizes the need for early and accurate identification of blank substrate defects and the risk they pose to the patterned reticle. While Automatic Defect Classification (ADC) is a well-developed technology for inspection and analysis of defects on patterned wafers and masks in the semiconductors industry, ADC for mask blanks is still in the early stages of adoption and development. Calibre ADC is a powerful analysis tool for fast, accurate, consistent and automatic classification of defects on mask blanks. Accurate, automated classification of mask blanks leads to better usability of blanks by enabling defect avoidance technologies during mask writing. Detailed information on blank defects can help to select appropriate job-decks to be written on the mask by defect avoidance tools [1][4][5]. Smart algorithms separate critical defects from the potentially large number of non-critical defects or false defects detected at various stages during mask blank preparation. Mechanisms used by Calibre ADC to identify and characterize defects include defect location and size, signal polarity (dark, bright) in both transmitted and reflected review images, distinguishing defect signals from background noise in defect images. The Calibre ADC engine then uses a decision tree to translate this information into a defect classification code. Using this automated process improves classification accuracy, repeatability and speed, while avoiding the subjectivity of human judgment compared to the alternative of manual defect classification by trained personnel [2]. This paper focuses on the results from the evaluation of Automatic Defect Classification (ADC) product at MP Mask

  18. Window defect planar mapping technique

    NASA Technical Reports Server (NTRS)

    Minton, F. R.; Minton, U. O. (Inventor)

    1976-01-01

    A method of planar mapping defects in a window having an edge surface and a planar surface. The method is comprised of steps for mounting the window on a support surface. Then a light sensitive paper is placed adjacent to the window surface. A light source is positioned adjacent to the window edge. The window is then illuminated with the source of light for a predetermined interval of time. Defects on the surface of the glass, as well as in the interior of the glass are detected by analyzing the developed light sensitive paper. The light source must be in the form of optical fibers or a light tube whose light transmitting ends are placed near the edge surface of the window.

  19. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  20. Reconstructive options for periocular defects.

    PubMed

    Jewett, B S; Shockley, W W

    2001-06-01

    Reconstruction of the periorbital area following skin cancer excision requires a thorough knowledge of orbital anatomy and eyelid function. Reconstructive procedures should maintain the function of periorbital structures while attempting to achieve optimal cosmesis. Generally, eyelid reconstruction can be considered in terms of the thickness and overall size of the defect. Both the anterior and posterior lamella should be restored, and at least one of these layers needs to be vascularized. The integrity of the canthal tendons should also be addressed. If severed, the tendons should be attached to bony landmarks in order to recreate the proper curvature of the eyelid against the globe. Finally, defects involving the lacrimal system should be assessed and properly reconstituted.

  1. Why Search for Congenital Defects?

    PubMed Central

    Collins, John F.

    1966-01-01

    The causation of congenital malformation is receiving increased study. In Canada, epidemiologic surveys are being planned, based upon the institution of Provincial Registries to which physicians and other agencies will voluntarily report cases coming to their attention. The literature in regard to prevalence studies of congenital cardiac defects in school children is reviewed. Over the past 25 years, studies employing the proposed technique demonstrated a rising trend, from 1.4 per 1000 to 2.6 per 1000. By contrast, specific surveys for congenital cardiac defect carried out by expert personnel using radiographs and electrocardiographs, resulted in essentially uniform rates, approximating 5 to 6 per 1000. It is concluded that the latter is a superior technique of epidemiologic survey over the “Central Registry” method, and should command a due proportion of health resources directed towards congenital malformation research. PMID:5914837

  2. Cooperation and Defection in Ghetto

    NASA Astrophysics Data System (ADS)

    Kułakowski, Krzysztof

    We consider ghetto as a community of people ruled against their will by an external power. Members of the community feel that their laws are broken. However, attempts to leave ghetto makes their situation worse. We discuss the relation of the ghetto inhabitants to the ruling power in context of their needs, organized according to the Maslow hierarchy. Decisions how to satisfy successive needs are undertaken in cooperation with or defection the ruling power. This issue allows to construct the tree of decisions and to adopt the pruning technique from the game theory. Dynamics of decisions can be described within the formalism of fundamental equations. The result is that the strategy of defection is stabilized by the estimated payoff.

  3. Inspection of lithographic mask blanks for defects

    DOEpatents

    Sommargren, Gary E.

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  4. COMPARISON OF SELECTED WELD DEFECT EXTRACTION METHODS

    SciTech Connect

    Sikora, R.; Baniukiewicz, P.; Chady, T.; Rucinski, W.; Swiadek, K.; Caryk, M.; Lopato, P.

    2008-02-28

    This paper presents three different methods of welding defects detection from radiographs. First two methods are dedicated for extraction of flaws directly from radiograms. Fuzzy logic system considers whether the pixel belongs to crack (or background) using defects probability maps together with simple fuzzy rules. Neural network method uses knowledge gathered from radiographs with known defects. Indirect method extracts defects by subtracting background from the radiograph and next using various local thresholding methods.

  5. Comparison of Selected Weld Defect Extraction Methods

    NASA Astrophysics Data System (ADS)

    Sikora, R.; Baniukiewicz, P.; Chady, T.; Ruciński, W.; Świadek, K.; Caryk, M.; Lopato, P.

    2008-02-01

    This paper presents three different methods of welding defects detection from radiographs. First two methods are dedicated for extraction of flaws directly from radiograms. Fuzzy logic system considers whether the pixel belongs to crack (or background) using defects probability maps together with simple fuzzy rules. Neural network method uses knowledge gathered from radiographs with known defects. Indirect method extracts defects by subtracting background from the radiograph and next using various local thresholding methods.

  6. Sinus Venosus Atrial Septal Defect

    DTIC Science & Technology

    2010-04-01

    chest CT was performed to evaluate for pulmonary embolism (figure 2). The chest radiograph (figure 1) demonstrates increased central pulmonary ...Fig. 5 Sinus venosus defect at birth . The shaded area in purple represents the sinus venosum. The anomalous right pulmonary venous anatomy...department (ED) with chest pain and an ankle fracture after being hit by a car while riding a horse. Chest imaging noted enlarged central pulmonary

  7. Visual field defects in onchocerciasis.

    PubMed Central

    Thylefors, B; Tønjum, A M

    1978-01-01

    Lesions in the posterior segment of the eye in onchocerciasis may give visual field defects, but so far no detailed investigation has been done to determine the functional visual loss. Examination of the visual fields in 18 selected cases of onchocerciasis by means of a tangent screen test revealed important visual field defects associated with lesions in the posterior segment of the eye. Involvement of the optic nerve seemed to be important, giving rise to severely constricted visual fields. Cases of postneuritic optic atrophy showed a very uniform pattern of almost completely constricted visual fields, with only 5 to 10 degree central rest spared. Papillitis gave a similar severe constriction of the visual fields. The pattern of visual fields associated with optic neuropathy in onchocerciasis indicates that a progressive lesion of the optic nerve from the periphery may be responsible for the loss of vision. The visual field defects in onchocerciasis constitute a serious handicap, which must be taken into consideration when estimating the socioeconomic importance of the disease. Images PMID:678499

  8. Photonic crystals with topological defects

    NASA Astrophysics Data System (ADS)

    Liew, Seng Fatt; Knitter, Sebastian; Xiong, Wen; Cao, Hui

    2015-02-01

    We introduce topological defects to a square lattice of elliptical cylinders. Despite the broken translational symmetry, the long-range positional order of the cylinders leads to a residual photonic band gap in the local density of optical states. However, the band-edge modes are strongly modified by the spatial variation of the ellipse orientation. The Γ -X band-edge mode splits into four regions of high intensity and the output flux becomes asymmetric due to the formation of crystalline domains with different orientation. The Γ -M band-edge mode has the energy flux circulating around the topological defect center, creating an optical vortex. By removing the elliptical cylinders at the center, we create localized defect states, which are dominated by either clockwise or counterclockwise circulating waves. The flow direction can be switched by changing the ellipse orientation. The deterministic aperiodic variation of the unit cell orientation adds another dimension to the control of light in photonic crystals, enabling the creation of a diversified field pattern and energy flow landscape.

  9. Templates Aid Removal Of Defects From Castings

    NASA Technical Reports Server (NTRS)

    Hendrickson, Robert G.

    1992-01-01

    Templates used to correlate defects in castings with local wall thicknesses. Placed on part to be inspected after coated with penetrant dye. Positions of colored spots (indicative of defects) noted. Ultrasonic inspector measures thickness of wall at unacceptable defects only - overall inspection not necessary.

  10. Electroneutral intrinsic point defects in cadmium chalcogenides

    SciTech Connect

    Kharif, Ya.L.; Kudryashov, N.I.; Strunilina, T.A.

    1987-12-01

    Low-mobility electrically neutral intrinsic point defects were observed in cadmium chalcogenides. It was shown that the concentration of these defects is proportional to the cadmium vapor pressure to the 1/3 power at a constant temperature, and a mechanism for the formation of these defects were proposed.

  11. 7 CFR 51.2659 - Condition defects.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Condition defects. 51.2659 Section 51.2659 Agriculture... Standards for Grades for Sweet Cherries 1 Definitions § 51.2659 Condition defects. Condition defects means... soft cherries and such factors as pitting, shriveling, sunken areas, brown discoloration and bruising...

  12. Method for mask repair using defect compensation

    DOEpatents

    Sweeney, Donald W.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

  13. Photographic guide of selected external defect indicators and associated internal defects in yellow birch

    Treesearch

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow birch. Eleven types of external...

  14. Photographic guide of selected external defect indicators and associated internal defects in sugar maple

    Treesearch

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for sugar maple. Eleven types of external...

  15. Second workshop role of point defects/defect complexes in silicon device fabrication

    SciTech Connect

    Not Available

    1992-01-01

    Abstracts are presented of 24 papers, arranged under the following session/panel headings: defects and impurities in commercial photovoltaic Si substrates, point defects and point defect processes, impurity gettering for Si solar cells, gettering in Si solar cells, and passivation of impurities and defects.

  16. Photographic guide of selected external defect indicators and associated internal defects in northern red oak

    Treesearch

    Everette D. Rast

    1982-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide aids the individual in identifying the surface defect indicator and also shows the progressive stages of the defect throughout its development. It illustrates and describes eight types...

  17. Photographic guide of selected external defect indicators and associated internal defects in white oak

    Treesearch

    Everette D. Rast; John A. Beaton; David L. Sonderman; David L. Sonderman

    1989-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and also shows the progressive stages of the defect throughout its development for white oak. It illustrates and...

  18. Photographic guide to selected external defect indicators and associated internal defects in black walnut

    Treesearch

    Everette D.Beaton John A. Rast; David L. Sonderman; David L. Sonderman

    1988-01-01

    To properly classify qr grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide aids the individual in identifying the surface defect indicator and also shows the progressive stages of the defect throughout its develqpment for black walnut. It illustrates and...

  19. Photographic guide of selected external defect indicators and associated internal defects in yellow-poplar

    Treesearch

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow-poplar. Twelve types of external...

  20. Photographic guide to selected external defect indicators and associated internal defects in black cherry

    Treesearch

    Everette D. Rast; John A. Beaton; John A. Beaton

    1985-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide aids the individual in identifying the surface defect indicator and also shows the progressive stages of the defect throughout its development for black cherry. It illustrates and...

  1. ENDEAVOUR to understand EUV buried defect printability

    NASA Astrophysics Data System (ADS)

    Seki, Kazunori; Isogawa, Takeshi; Kagawa, Masayuki; Akima, Shinji; Kodera, Yutaka; Badger, Karen; Qi, Zhengqing J.; Lawliss, Mark; Rankin, Jed; Bonam, Ravi

    2015-07-01

    NAP-PD (Native Acting Phase - Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibility are analyzed with conventional phase contrast blank inspection @193 nm wavelength, pattern inspection @193 nm wavelength and SEM. The mask is also printed on wafer and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank and pattern inspection sensitivity is not enough to detect all of the printable defects.

  2. The defect variance of random spherical harmonics

    NASA Astrophysics Data System (ADS)

    Marinucci, Domenico; Wigman, Igor

    2011-09-01

    The defect of a function f:M\\rightarrow {R} is defined as the difference between the measure of the positive and negative regions. In this paper, we begin the analysis of the distribution of defect of random Gaussian spherical harmonics. By an easy argument, the defect is non-trivial only for even degree and the expected value always vanishes. Our principal result is evaluating the defect variance, asymptotically in the high-frequency limit. As other geometric functionals of random eigenfunctions, the defect may be used as a tool to probe the statistical properties of spherical random fields, a topic of great interest for modern cosmological data analysis.

  3. Effects of Stone-Wales and vacancy defects in atomic-scale friction on defective graphite

    SciTech Connect

    Sun, Xiao-Yu; Wu, RunNi; Xia, Re; Chu, Xi-Hua; Xu, Yuan-Jie

    2014-05-05

    Graphite is an excellent solid lubricant for surface coating, but its performance is significantly weakened by the vacancy or Stone-Wales (SW) defect. This study uses molecular dynamics simulations to explore the frictional behavior of a diamond tip sliding over a graphite which contains a single defect or stacked defects. Our results suggest that the friction on defective graphite shows a strong dependence on defect location and type. The 5-7-7-5 structure of SW defect results in an effectively negative slope of friction. For defective graphite containing a defect in the surface, adding a single vacancy in the interior layer will decrease the friction coefficients, while setting a SW defect in the interior layer may increase the friction coefficients. Our obtained results may provide useful information for understanding the atomic-scale friction properties of defective graphite.

  4. Defect disorder in UO{sub 2}

    SciTech Connect

    Hassan, A.-R.; El-Azab, Anter; Yablinsky, Clarissa; Allen, T.

    2013-08-15

    A defect disorder model has been developed to determine equilibrium off-stoichiometry and its spatial variations in UO{sub 2} crystals. The model gives the concentrations of atomic defects and electronic carriers as functions of oxygen partial pressure and temperature in the bulk and near crystal surfaces subject to an oxygen environment. Energetic parameters from published density functional theory calculations have been integrated into the defect disorder model for an accurate determination of the defect density and off-stoichiometry. The ionosorption theory has been used to couple the oxygen environment with the defect state in the crystal as we solved for the defect disorder near crystal surfaces. Contrary to the common belief that hyper-stoichiometry of UO{sub 2} is dominated by oxygen interstitials, the current model predicts that this regime is rather dominated by uranium vacancies. The model predictions also show that, in the presence of surfaces, the point defect concentrations vary by orders of magnitude in the subsurface region relative to the bulk region. Highlights: • Defect disorder in bulk UO2+x is modeled in terms of temperature and oxygen pressure. • The densities of atomic defects and electronic charge carriers are determined. • The model is extended to study the heterogeneity of defect density near crystal surfaces. • The surface effect is modeled using ionosorption theory. • The dominant defect type and off-stoichiometry profile near surface are found.

  5. Novel EUV Mask Blank Defect Repair Developments

    SciTech Connect

    Hau-Riege, S; Barty, A; Mirkarimi, P

    2003-03-31

    The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of EUVL reticles are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this report, we discuss progress in two areas of defect repair: (1) We discuss the effect of the residual reflectance variation over the repair zone after amplitude-defect repair on the process window. This allows the determination of the maximum tolerable residual damage induced by amplitude defect repair. (2) We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield. Our calculations further show that yield can be maximized by increasing the number of Mo/Si bilayers.

  6. Resist process optimization for further defect reduction

    NASA Astrophysics Data System (ADS)

    Tanaka, Keiichi; Iseki, Tomohiro; Marumoto, Hiroshi; Takayanagi, Koji; Yoshida, Yuichi; Uemura, Ryouichi; Yoshihara, Kosuke

    2012-03-01

    Defect reduction has become one of the most important technical challenges in device mass-production. Knowing that resist processing on a clean track strongly impacts defect formation in many cases, we have been trying to improve the track process to enhance customer yield. For example, residual type defect and pattern collapse are strongly related to process parameters in developer, and we have reported new develop and rinse methods in the previous papers. Also, we have reported the optimization method of filtration condition to reduce bridge type defects, which are mainly caused by foreign substances such as gels in resist. Even though we have contributed resist caused defect reduction in past studies, defect reduction requirements continue to be very important. In this paper, we will introduce further process improvements in terms of resist defect reduction, including the latest experimental data.

  7. 7 CFR 42.106 - Classifying and recording defects.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... container is scored only once for these two defects since the rust condition can be atributed to the leak... “leaker” (a critical defect) and not as “pitted rust” (a major defect). (2) Unrelated defects are...

  8. 7 CFR 42.106 - Classifying and recording defects.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... container is scored only once for these two defects since the rust condition can be atributed to the leak... “leaker” (a critical defect) and not as “pitted rust” (a major defect). (2) Unrelated defects are...

  9. 7 CFR 42.106 - Classifying and recording defects.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... container is scored only once for these two defects since the rust condition can be attributed to the leak... “leaker” (a critical defect) and not as “pitted rust” (a major defect). (2) Unrelated defects are...

  10. 7 CFR 42.106 - Classifying and recording defects.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... container is scored only once for these two defects since the rust condition can be atributed to the leak... “leaker” (a critical defect) and not as “pitted rust” (a major defect). (2) Unrelated defects are...

  11. Posttraumatic cortical defect of femur.

    PubMed

    Nadarajah, Jeyaseelan; Srivastava, Deep N; Malhotra, Rajesh; Palaniswamy, Aravindh

    2013-01-01

    Posttraumatic cortical defect of bone is a rare entity which occurs in a maturing skeleton following green stick or torus fracture. Most of the cases are asymptomatic and they are detected incidentally on radiograph. These lesions usually require no treatment. However, the appearance of these lesions can mimic various pathological conditions affecting bone. Knowledge about this entity is important as it avoids unnecessary investigations. We present this case as the occurrence of this entity in femur is very rare and the child was symptomatic.

  12. On nuclear reactions in defects

    SciTech Connect

    Sienes, J.K. )

    1991-05-01

    The variability of results concerning cold fusion, together with the difficulty of explaining the observations, suggests that some nonstandard processes may be occurring. One such possibility is that nuclear reactions occur in defects of a deuterated lattice as a result of transient motions that momentarily bring deuterium atoms into close proximity. In this paper a mechanism involving shear of a one-dimensional lattice is described that illustrates this possibility. Order-of-magnitude estimates indicate that the expected fusion rate is not inconsistent with some experiments.

  13. Reconstruction of Peripelvic Oncologic Defects.

    PubMed

    Weichman, Katie E; Matros, Evan; Disa, Joseph J

    2017-10-01

    After studying this article, the participant should be able to: 1. Understand the anatomy of the peripelvic area. 2. Understand the advantages and disadvantages of performing peripelvic reconstruction in patients undergoing oncologic resection. 3. Select the appropriate local, pedicled, or free-flap reconstruction based on the location of the defect and donor-site characteristics. Peripelvic reconstruction most commonly occurs in the setting of oncologic ablative surgery. The peripelvic area contains several distinct reconstructive regions, including vagina, vulva, penis, and scrotum. Each area provides unique reconstructive considerations. In addition, prior or future radiation therapy or chemotherapy along with cancer cachexia can increase the complexity of reconstruction.

  14. Robotic atrial septal defect closure.

    PubMed

    Senay, Sahin; Gullu, Ahmet Umit; Kocyigit, Muharrem; Degirmencioglu, Aleks; Karabulut, Hasan; Alhan, Cem

    2014-01-01

    Atrial septal defect (ASD) is one of the most common congenital cardiac diseases. This pathology can be treated with percutaneous devices. However, some of the ASDs are not suitable for device closure. Also, there may be device-related late complications of transcatheter ASD closure. Currently, robotic surgical techniques allow surgeons to close ASDs in a totally endoscopic fashion with a high success rate and a low complication rate. This study demonstrates the basic concepts and technique of robotic ASD closure. © The Author 2014. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

  15. Long term simulation of point defect cluster size distributions from atomic displacement cascades in Fe70Cr20Ni10

    NASA Astrophysics Data System (ADS)

    Souidi, A.; Hou, M.; Becquart, C. S.; Domain, C.; De Backer, A.

    2015-06-01

    We have used an Object Kinetic Monte Carlo (OKMC) model to simulate the long term evolution of the primary damage in Fe70Cr20Ni10 alloys. The mean number of Frenkel pairs created by different Primary Knocked on Atoms (PKA) was estimated by Molecular Dynamics using a ternary EAM potential developed in the framework of the PERFORM-60 European project. This number was then used to obtain the vacancy-interstitial recombination distance required in the calculation of displacement cascades in the Binary Collision Approximation (BCA) with code MARLOWE (Robinson, 1989). The BCA cascades have been generated in the 10-100 keV range with the MARLOWE code and two different screened Coulomb potentials, namely, the Molière approximation to the Thomas-Fermi potential and the so-called "Universal" potential by Ziegler, Biersack and Littmark (ZBL). These cascades have been used as input to the OKMC code LAKIMOCA (Domain et al., 2004), with a set of parameters for describing the mobility of point defect clusters based on ab initio calculations and experimental data. The cluster size distributions have been estimated for irradiation doses of 0.1 and 1 dpa, and a dose rate of 10-7 dpa/s at 600 K. We demonstrate that, like in the case of BCC iron, cluster size distributions in the long term are independent of the cascade energy and that the recursive cascade model suggested for BCC iron in Souidi et al. (2011) also applies to FCC Fe70Cr20Ni10. The results also show that the influence of the BCA potential is sizeable but the qualitative correspondence in the predicted long term evolution is excellent.

  16. Improvement in accuracy of defect size measurement by automatic defect classification

    NASA Astrophysics Data System (ADS)

    Samir, Bhamidipati; Pereira, Mark; Paninjath, Sankaranarayanan; Jeon, Chan-Uk; Chung, Dong-Hoon; Yoon, Gi-Sung; Jung, Hong-Yul

    2015-10-01

    The blank mask defect review process involves detailed analysis of defects observed across a substrate's multiple preparation stages, such as cleaning and resist-coating. The detailed knowledge of these defects plays an important role in the eventual yield obtained by using the blank. Defect knowledge predominantly comprises of details such as the number of defects observed, and their accurate sizes. Mask usability assessment at the start of the preparation process, is crudely based on number of defects. Similarly, defect size gives an idea of eventual wafer defect printability. Furthermore, monitoring defect characteristics, specifically size and shape, aids in obtaining process related information such as cleaning or coating process efficiencies. Blank mask defect review process is largely manual in nature. However, the large number of defects, observed for latest technology nodes with reducing half-pitch sizes; and the associated amount of information, together make the process increasingly inefficient in terms of review time, accuracy and consistency. The usage of additional tools such as CDSEM may be required to further aid the review process resulting in increasing costs. Calibre® MDPAutoClassify™ provides an automated software alternative, in the form of a powerful analysis tool for fast, accurate, consistent and automatic classification of blank defects. Elaborate post-processing algorithms are applied on defect images generated by inspection machines, to extract and report significant defect information such as defect size, affecting defect printability and mask usability. The algorithm's capabilities are challenged by the variety and complexity of defects encountered, in terms of defect nature, size, shape and composition; and the optical phenomena occurring around the defect [1]. This paper mainly focuses on the results from the evaluation of Calibre® MDPAutoClassify™ product. The main objective of this evaluation is to assess the capability of

  17. Defect engineering in Multinary Semiconductors

    NASA Astrophysics Data System (ADS)

    Radautsan, S. I.

    1993-12-01

    The last two decades have shown a rapid increase both in our knowledge of the multinary compounds and their applications in engineering. The remarkable scientific leaders from different countries Prof. N.A.Goryunova, M.Rodot, A. Rabenau, E. Parthe, P. Manca, K. Matsumoto, C. Schwab, R. Tomlinson, J. Woolley, W.T. Kim, T. Irie, A. Zunger, N. Joshi, E. Sato et al. made their valuable contribution to the problems of the classification,crystal chemistry,growing processes and characterizations of multinary compounds [1-3]. Most of them were technologically difficult and as a result it was very hard to obtain the crystals with reproducible parameters. It was therefore obvious the well coordinated efforts in the field of chemistry,physics and electronics to be required. In this paper we review some of the major original results to get the defective compounds suitable for fundamental research and electronic applications. The main attention is paid to such effects as non-stoichiometry, order-disorder phase transitions as well as to non-equilibrium treatment by employing different methods of the defect engineering.

  18. Magnetoencephalography signals are influenced by skull defects.

    PubMed

    Lau, S; Flemming, L; Haueisen, J

    2014-08-01

    Magnetoencephalography (MEG) signals had previously been hypothesized to have negligible sensitivity to skull defects. The objective is to experimentally investigate the influence of conducting skull defects on MEG and EEG signals. A miniaturized electric dipole was implanted in vivo into rabbit brains. Simultaneous recording using 64-channel EEG and 16-channel MEG was conducted, first above the intact skull and then above a skull defect. Skull defects were filled with agar gels, which had been formulated to have tissue-like homogeneous conductivities. The dipole was moved beneath the skull defects, and measurements were taken at regularly spaced points. The EEG signal amplitude increased 2-10 times, whereas the MEG signal amplitude reduced by as much as 20%. The EEG signal amplitude deviated more when the source was under the edge of the defect, whereas the MEG signal amplitude deviated more when the source was central under the defect. The change in MEG field-map topography (relative difference measure, RDM(∗)=0.15) was geometrically related to the skull defect edge. MEG and EEG signals can be substantially affected by skull defects. MEG source modeling requires realistic volume conductor head models that incorporate skull defects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  19. Effects of in-cascade defect clustering on near-term defect evolution

    SciTech Connect

    Heinisch, H.L.

    1997-08-01

    The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

  20. Defect-Engineered Metal–Organic Frameworks

    PubMed Central

    Fang, Zhenlan; Bueken, Bart; De Vos, Dirk E; Fischer, Roland A

    2015-01-01

    Defect engineering in metal–organic frameworks (MOFs) is an exciting concept for tailoring material properties, which opens up novel opportunities not only in sorption and catalysis, but also in controlling more challenging physical characteristics such as band gap as well as magnetic and electrical/conductive properties. It is challenging to structurally characterize the inherent or intentionally created defects of various types, and there have so far been few efforts to comprehensively discuss these issues. Based on selected reports spanning the last decades, this Review closes that gap by providing both a concise overview of defects in MOFs, or more broadly coordination network compounds (CNCs), including their classification and characterization, together with the (potential) applications of defective CNCs/MOFs. Moreover, we will highlight important aspects of “defect-engineering” concepts applied for CNCs, also in comparison with relevant solid materials such as zeolites or COFs. Finally, we discuss the future potential of defect-engineered CNCs. PMID:26036179

  1. Agricultural Compounds in Water and Birth Defects.

    PubMed

    Brender, Jean D; Weyer, Peter J

    2016-06-01

    Agricultural compounds have been detected in drinking water, some of which are teratogens in animal models. The most commonly detected agricultural compounds in drinking water include nitrate, atrazine, and desethylatrazine. Arsenic can also be an agricultural contaminant, although arsenic often originates from geologic sources. Nitrate has been the most studied agricultural compound in relation to prenatal exposure and birth defects. In several case-control studies published since 2000, women giving birth to babies with neural tube defects, oral clefts, and limb deficiencies were more likely than control mothers to be exposed to higher concentrations of drinking water nitrate during pregnancy. Higher concentrations of atrazine in drinking water have been associated with abdominal defects, gastroschisis, and other defects. Elevated arsenic in drinking water has also been associated with birth defects. Since these compounds often occur as mixtures, it is suggested that future research focus on the impact of mixtures, such as nitrate and atrazine, on birth defects.

  2. Primordial inhomogeneities from massive defects during inflation

    NASA Astrophysics Data System (ADS)

    Firouzjahi, Hassan; Karami, Asieh; Rostami, Tahereh

    2016-10-01

    We consider the imprints of local massive defects, such as a black hole or a massive monopole, during inflation. The massive defect breaks the background homogeneity. We consider the limit that the physical Schwarzschild radius of the defect is much smaller than the inflationary Hubble radius so a perturbative analysis is allowed. The inhomogeneities induced in scalar and gravitational wave power spectrum are calculated. We obtain the amplitudes of dipole, quadrupole and octupole anisotropies in curvature perturbation power spectrum and identify the relative configuration of the defect to CMB sphere in which large observable dipole asymmetry can be generated. We observe a curious reflection symmetry in which the configuration where the defect is inside the CMB comoving sphere has the same inhomogeneous variance as its mirror configuration where the defect is outside the CMB sphere.

  3. Little string origin of surface defects

    NASA Astrophysics Data System (ADS)

    Haouzi, Nathan; Schmid, Christian

    2017-05-01

    We derive a large class of codimension-two defects of 4d \\mathcal{N}=4 Super Yang-Mills (SYM) theory from the (2, 0) little string. The origin of the little string is type IIB theory compactified on an ADE singularity. The defects are D-branes wrapping the 2-cycles of the singularity. We use this construction to make contact with the description of SYM defects due to Gukov and Witten [1]. Furthermore, we provide a geometric perspective on the nilpotent orbit classification of codimension-two defects, and the connection to ADE-type Toda CFT. The only data needed to specify the defects is a set of weights of the algebra obeying certain constraints, which we give explicitly. We highlight the differences between the defect classification in the little string theory and its (2 , 0) CFT limit.

  4. Altering graphene line defect properties using chemistry

    NASA Astrophysics Data System (ADS)

    Vasudevan, Smitha; White, Carter; Gunlycke, Daniel

    2012-02-01

    First-principles calculations are presented of a fundamental topological line defect in graphene that was observed and reported in Nature Nanotech. 5, 326 (2010). These calculations show that atoms and smaller molecules can bind covalently to the surface in the vicinity of the graphene line defect. It is also shown that the chemistry at the line defect has a strong effect on its electronic and magnetic properties, e.g. the ferromagnetically aligned moments along the line defect can be quenched by some adsorbates. The strong effect of the adsorbates on the line defect properties can be understood by examining how these adsorbates affect the boundary-localized states in the vicinity of the Fermi level. We also expect that the line defect chemistry will significantly affect the scattering properties of incident low-energy particles approaching it from graphene.

  5. Congenital defects of the ruminant nervous system.

    PubMed

    Washburn, Kevin E; Streeter, Robert N

    2004-07-01

    Abnormalities of the nervous system are common occurrences among congenital defects and have been reported in most ruminant species. From a clinical standpoint, the signs of such defects create difficulty in arriving at an antemortem etiology through historical and physical examination alone. By first localizing clinical signs to their point of origin in the nervous system, however, a narrower differential list can be generated so that the clinician can pursue a definitive diagnosis. This article categorizes defects of the ruminant nervous system by location of salient clinical signs into dysfunction of one of more of the following regions: cerebrum, cerebellum,and spinal cord. A brief review of some of the more recognized etiologies of these defects is also provided. It is important to make every attempt to determine the cause of nervous system defects because of the impact that an inherited condition would have on a breeding program and for prevention of defects caused by infectious or toxic teratogen exposure.

  6. Reconstruction of partial laryngopharyngectomy defects.

    PubMed

    Anthony, J P; Neligan, P C; Rotstein, L E; Coleman, J

    1997-09-01

    As our contributors to this section have pointed out, there are at present two main methods of reconstructing defects of the pharynx and cervical esophagus: free jejunal transfer (FJT) and tubed radial forearm flap. The advantage of the FJT is that it is a tube, thus limiting the enteric suture lines to proximal and distal. The radial forearm flap requires not only the proximal and distal suture lines but a long longitudinal suture line to create the tube. This increase the possibility for fistula formation. The controversy surrounding this case concerns what to do with a remaining mucosal strip after a subtotal laryngectomy. Traditional reconstructive principles would dictate that normal tissue should not be sacrificed, but some would argue that the remaining mucosa should be sacrificed to allow for use of a FJT. The other alternative would be use of a radical forearm skin flap tubed to 270 degrees. At the University of Texas M. D. Anderson Cancer Center, we preferentially use the FJT for almost all defects and would probably have sacrificed the remaining mucosal strip in this particular case. We have used skin flaps to patch pharyngeal defects and prevent stricture in a number of cases. This is usually done however when the remaining pharyngeal mucosa approaches 50% or greater. Although we do not routinely use the tubed radial forearm flap because of the increased rate of fistula formation, there are some definite indications for its use. The first important indication is in patients in whom speech rehabilitation is desired or indicated. The skin flap provides a stiffer resonating chamber for the speech production and does not have the peristalsis or the mucus production associated with the jejunal flap. Another indication for use of radial forearm flap would be when there is a contraindication to celiotomy, ie, patients with hepatic cirrhosis and associated ascites or other abdominal conditions precluding abdominal exploration. In this situation, avoiding an

  7. Defect Characterization Using Two-Dimensional Arrays

    NASA Astrophysics Data System (ADS)

    Velichko, A.; Wilcox, P. D.

    2011-06-01

    2D arrays are able to `view' a given defect from a range of angles leading to the possibility of obtaining richer characterization detail than possible with 1D arrays. In this paper a quantitative comparison of 2D arrays with different element layouts is performed. A technique for extracting the scattering matrix of a defect from the raw 2D array data is also presented. The method is tested on experimental data for characterization of various volumetric defects.

  8. Processed-induced defects in EFG ribbons

    NASA Technical Reports Server (NTRS)

    Cunningham, B.; Ast, D. G.

    1982-01-01

    The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons was studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer.

  9. Detection of tanker defects with infrared thermography

    NASA Technical Reports Server (NTRS)

    Kantsios, A. G.

    1980-01-01

    Infrared scanning technique for finding defects in secondary barrier of liquid natural gas (LNG) tank has been successfully tested on ship under construction at Newport News Shipbuilding and Dry Dock Company. Technique determines defects with minimal expenditure of time and manpower. Tests could be repeated during life of tanker and make more complicated testing unnecessary. Tests also confirmed that tank did not have any major defects, and tank was certified.

  10. Research In Diagnosing Bearing Defects From Vibrations

    NASA Technical Reports Server (NTRS)

    Zoladz, T.; Earhart, E.; Fiorucci, T.

    1995-01-01

    Report describes research in bearing-defect signature analysis - use of vibration-signal analysis to diagnose defects in roller and ball bearings. Experiments performed on bearings in good condition and other bearings in which various parts scratched to provide known defects correlated with vibration signals. Experiments performed on highly instrumented motor-driven rotor assembly at speeds up to 10,050 r/min, using accelerometers, velocity probes, and proximity sensors mounted at various locations on assembly to measure vibrations.

  11. Detection of tanker defects with infrared thermography

    NASA Technical Reports Server (NTRS)

    Kantsios, A. G.

    1980-01-01

    Infrared scanning technique for finding defects in secondary barrier of liquid natural gas (LNG) tank has been successfully tested on ship under construction at Newport News Shipbuilding and Dry Dock Company. Technique determines defects with minimal expenditure of time and manpower. Tests could be repeated during life of tanker and make more complicated testing unnecessary. Tests also confirmed that tank did not have any major defects, and tank was certified.

  12. Non-Topological Inflation from Embedded Defects

    SciTech Connect

    Alexander, Stephon H.S

    2003-02-28

    We discuss a new mechanism of obtaining a period of cosmological inflation in the context of string theory. This mechanism is based on embedded defects which form dynamically on higher dimensional D-branes. Such defects generate topological inflation, but unlike topological inflation from stable defects, here there is a natural graceful exit from inflation: the decay of the embedded defect. We demonstrate the idea in the context of a brane-antibrane annihilation process. The graceful exit mechanism suggested here applies generically to all realizations of inflation on D-branes.

  13. Dynamic defects in photonic Floquet topological insulators

    NASA Astrophysics Data System (ADS)

    Jörg, Christina; Letscher, Fabian; Fleischhauer, Michael; von Freymann, Georg

    2017-08-01

    Edge modes in topological insulators are known to be robust against defects. We investigate if this also holds true when the defect is not static, but varies in time. We study the influence of defects with time-dependent coupling on the robustness of the transport along the edge in a Floquet system of helically curved waveguides. Waveguide arrays are fabricated via direct laser writing in a negative tone photoresist. We find that single dynamic defects do not destroy the chiral edge current, even when the temporal modulation is strong. Quantitative numerical simulation of the intensity in the bulk and edge waveguides confirms our observation.

  14. Multimode model based defect characterization in composites

    NASA Astrophysics Data System (ADS)

    Roberts, R.; Holland, S.; Gregory, E.

    2016-02-01

    A newly-initiated research program for model-based defect characterization in CFRP composites is summarized. The work utilizes computational models of the interaction of NDE probing energy fields (ultrasound and thermography), to determine 1) the measured signal dependence on material and defect properties (forward problem), and 2) an assessment of performance-critical defect properties from analysis of measured NDE signals (inverse problem). Work is reported on model implementation for inspection of CFRP laminates containing delamination and porosity. Forward predictions of measurement response are presented, as well as examples of model-based inversion of measured data for the estimation of defect parameters.

  15. Surface defects and instanton-vortex interaction

    NASA Astrophysics Data System (ADS)

    Gorsky, A.; Le Floch, B.; Milekhin, A.; Sopenko, N.

    2017-07-01

    We propose a simple formula for the 4d-2d partition function of half-BPS surface defects in d = 4, N = 2 gauge theories: Z4d-2d =4d. Our results are applicable for any surface defect obtained by gauging a 2d flavor symmetry using a 4d gauge group. For defects obtained via the Higgsing procedure, our formula reproduces the recent calculation by Pan and Peelaers. For Gukov-Witten defects our results reproduce the orbifold calculation by Kanno and Tachikawa. We emphasize the role of ;negative vortices; which are realized as negative D0 branes.

  16. Augmentation of craniofacial defects using alloplastic material.

    PubMed

    Osunde, O D; Adebola, R A; Ver-or, N; Amole, I O; Akhiwu, B I; Jinjiri, N; Ladeinde, A; Ajike, S O; Efunkoya, A

    2013-09-01

    Alloplastic materials are increasingly being used in augmentation of craniofacial defects because of its ready availability, good aesthetic outcome and absence of donor site morbidity. This paper highlights experience in the use of heat-cured acrylic in augmentation cranioplasty. The management of three patients with anterior skull defect who presented at the Dental and Maxillofacial Surgery Clinic of the Aminu Kano Teaching Hospital over a five-year period is presented. There was good aesthetic outcome in all the patients and no complications were recorded. Augmentation of craniofacial defects using customized prefabricated heat-cured acrylic provides patients with a durable, stable and structural repair of craniofacial defects with good aesthetic outcome.

  17. Reconstruction of Small Soft Tissue Nasal Defects

    PubMed Central

    Wolfswinkel, Erik M.; Weathers, William M.; Cheng, David; Thornton, James F.

    2013-01-01

    Nasal defect repair has been one of the more challenging areas of reconstructive surgery due to the lack of uniform nasal skin thickness and complex contours. Currently, algorithms for medium to large nasal soft tissue defects have been well defined by various authors. Small defects, arbitrarily defined as 1 cm or less, still present significant challenges. In this article, the authors examine the options available to repair small soft tissue nasal defects and the appropriate situations in which each method is best suited. PMID:24872751

  18. [Integrated approach to nasal defects reconstruction].

    PubMed

    Verbo, E V; Gorkush, K N

    2016-01-01

    The aim of the study was to define and solve main problems in nasal defects reconstruction procedures planning. Fifty-two patients with nasal defects treated in Central Research Institute of Dentistry and Maxillofacial Surgery in 2010-2015 were included in the study. In 28 cases the defects were reconstructed by means of paramedial forehead flap. The authors highlight typical procedure pitfalls mainly associated with the planning stage. The study results prove paramedical forehead flap to be the most useful tool for subtotal and total nasal defects reconstruction but meticulous procedure planning is a must for success.

  19. Defect interactions within a group of subcascades

    SciTech Connect

    Heinisch, H.L.

    1996-10-01

    The evolution of the defect distributions within high energy cascades that contain multiple subcascades is studied as a function of temperature for cascades in copper. Low energy cascades generated with molecular dynamics are placed in close proximity to simulate the arrangement of subcascades within a high energy event, then the ALSOME code follows the evolution of the cascade damage during short term annealing. The intersubcascade defect interactions during the annealing stage are found to be minimal. However, no conclusions regarding effects of subcascades on defect production should be drawn until intersubcascade defect interactions during the quenching stage are examined.

  20. Defect reduction through Lean methodology

    NASA Astrophysics Data System (ADS)

    Purdy, Kathleen; Kindt, Louis; Densmore, Jim; Benson, Craig; Zhou, Nancy; Leonard, John; Whiteside, Cynthia; Nolan, Robert; Shanks, David

    2010-09-01

    Lean manufacturing is a systematic method of identifying and eliminating waste. Use of Lean manufacturing techniques at the IBM photomask manufacturing facility has increased efficiency and productivity of the photomask process. Tools, such as, value stream mapping, 5S and structured problem solving are widely used today. In this paper we describe a step-by-step Lean technique used to systematically decrease defects resulting in reduced material costs, inspection costs and cycle time. The method used consists of an 8-step approach commonly referred to as the 8D problem solving process. This process allowed us to identify both prominent issues as well as more subtle problems requiring in depth investigation. The methodology used is flexible and can be applied to numerous situations. Advantages to Lean methodology are also discussed.

  1. Electricity generation from defective tomatoes.

    PubMed

    Shrestha, Namita; Fogg, Alex; Wilder, Joseph; Franco, Daniel; Komisar, Simeon; Gadhamshetty, Venkataramana

    2016-12-01

    The United States faces a significant burden in treating 0.61billionkg of defective tomatoes (culls) every year. We present a proof-of-concept for generating electricity from culled tomatoes in microbial-electrochemical systems (MESs). This study delineates impedance behavior of the culled tomatoes in MESs and compares its impedance spectra with that of soluble substrates (dextrose, acetate, and wastewater). A series of AC and DC diagnostic tests have revealed the superior performance of the culled tomatoes compared to the pure substrates. Cyclic voltammetry results have indicated the active role of indigenous, diffusible redox-active pigments in the culled tomatoes on overall electricity production. Electrochemical impedance spectroscopy results have elucidated the role of peel and seed on the oxidation behavior of the culled tomatoes.

  2. Topological conformal defects with tensor networks

    NASA Astrophysics Data System (ADS)

    Hauru, Markus; Evenbly, Glen; Ho, Wen Wei; Gaiotto, Davide; Vidal, Guifre

    2016-09-01

    The critical two-dimensional classical Ising model on the square lattice has two topological conformal defects: the Z2 symmetry defect Dɛ and the Kramers-Wannier duality defect Dσ. These two defects implement antiperiodic boundary conditions and a more exotic form of twisted boundary conditions, respectively. On the torus, the partition function ZD of the critical Ising model in the presence of a topological conformal defect D is expressed in terms of the scaling dimensions Δα and conformal spins sα of a distinct set of primary fields (and their descendants, or conformal towers) of the Ising conformal field theory. This characteristic conformal data {Δα,sα}D can be extracted from the eigenvalue spectrum of a transfer matrix MD for the partition function ZD. In this paper, we investigate the use of tensor network techniques to both represent and coarse grain the partition functions ZDɛand ZD σ of the critical Ising model with either a symmetry defect Dɛ or a duality defect Dσ. We also explain how to coarse grain the corresponding transfer matrices MDɛand MD σ, from which we can extract accurate numerical estimates of {Δα,sα}Dɛ and {Δα,sα}Dσ. Two key ingredients of our approach are (i) coarse graining of the defect D , which applies to any (i.e., not just topological) conformal defect and yields a set of associated scaling dimensions Δα, and (ii) construction and coarse graining of a generalized translation operator using a local unitary transformation that moves the defect, which only exist for topological conformal defects and yields the corresponding conformal spins sα.

  3. Modeling the relationships among internal defect features and external Appalachian hardwood log defect indicators

    Treesearch

    R. Edward. Thomas

    2009-01-01

    As a hardwood tree grows and develops, surface defects such as branch stubs and wounds are overgrown. Evidence of these defects remain on the log surface for decades and in many instances for the life of the tree. As the tree grows the defect is encapsulated or grown over by new wood. During this process the appearance of the defect in the tree's bark changes. The...

  4. Predicting internal white oak (Quercus alba) log defect features using surface defect indicator measurements

    Treesearch

    Ralph E. Thomas

    2012-01-01

    As hardwood trees grow and develop, surface defects such as limb stubs and wounds are overgrown and encapsulated into the tree. Evidence of these defects can remain on the tree's surface for decades and in many instances for the life of the tree. The location and severity of internal defects dictate the quality and value of products that can be obtained from logs...

  5. 9 CFR 91.30 - Defective fittings.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 9 Animals and Animal Products 1 2010-01-01 2010-01-01 false Defective fittings. 91.30 Section 91... LIVESTOCK FOR EXPORTATION Inspection of Vessels and Accommodations § 91.30 Defective fittings. If previously used fittings aboard an ocean vessel are employed, any portion thereof found by the inspector to...

  6. Localization of defects using checkerboard test structures

    NASA Astrophysics Data System (ADS)

    Schellenberg, Sven-Olaf

    2001-04-01

    Defects in semiconductor industry become more important by shrinking structures and increasing complexity of process. Therefore the size of a killer defect becomes smaller and it is not easy to find them with optical inspection tools. In addition Inspection tools are not able to say something about electrical effects from defects which are found. With Checkerboard Test Structures it is possible to locate electrical defects. In fact these special test structures will be tested at the end of the process, like an usual function test. A special developed algorithm allows low quantity of pads. This gives a high spatial resolution and on the other hand we have good ratio between active and passive area. A reduction of a statistical failure could be reached, because it is not necessary to calculate the defect density from a small region. In particular special defect distribution like cluster can be considered. With this structures different layers can be examined for disconnections and short-circuits. Therefore it is possible to locate defects in one layer or between two layers. So the defect density for the sensitive dielectrica between two layers, like any kind of oxide can be calculated. The karree test structures can be used very good as an inline-defectmonitoring, because there is no difference from the original technology of proces. There are also no differences in time for processing and for testing, so Karreeteststructures is an optimal representation for your process.

  7. 7 CFR 51.2720 - Minor defects.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Standards for Shelled Runner Type Peanuts Definitions § 51.2720 Minor defects. Minor defects means that the... which is dark brown, dark gray, dark blue or black and covers more than one-fourth of the surface; (b) Flesh discoloration which is darker than a light yellow color or consists of more than a slight...

  8. 7 CFR 51.2762 - Minor defects.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Standards for Shelled Virginia Type Peanuts Definitions § 51.2762 Minor defects. Minor defects means that... discoloration which is dark brown, dark gray, dark blue or black and covers more than one-fourth of the surface; (b) Flesh discoloration which is darker than a light yellow color or consists of more than a...

  9. Folic acid and birth defect prevention

    MedlinePlus

    ... Women who have had a baby with a neural tube defect may need a higher dose of folic acid. If you have had a baby with a neural tube defect, you should take 400 micrograms of folic acid every day, even when you are not planning ...

  10. Sizing Dye-Penetrant Indications Of Defects

    NASA Technical Reports Server (NTRS)

    Molina, Orlando G.

    1988-01-01

    Sizes of cracks and holes viewed through borescope measured. Reference chart makes it possible to estimate sizes of borescope-observed defects on inner walls of tubes or otherwise hidden. Used both for round defects like pits or pores and for elongated ones like cracks.

  11. 30 CFR 56.7002 - Equipment defects.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Drilling and Rotary Jet Piercing Drilling § 56.7002 Equipment defects. Equipment defects affecting safety shall be corrected...

  12. 30 CFR 57.7002 - Equipment defects.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Drilling and Rotary Jet Piercing Drilling-Surface Only § 57.7002 Equipment defects. Equipment defects affecting...

  13. 7 CFR 52.780 - Defects.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Cherries 1 Factors of Quality § 52.780 Defects. (a) General. The factor of defects refers to the degree of freedom from harmless extraneous material, mutilated cherries, and cherries blemished by scab, hail injury, discoloration, scar tissue, or by other means. (1) Cherry means a whole cherry, whether or not pitted,...

  14. First principles calculations for defects in U

    SciTech Connect

    B. Beeler; B. Good; S. Rashkeev; C. Deo; M. Baskes; M. Okuniewski

    2010-12-01

    Uranium (U) exhibits a high temperature body-centered cubic (bcc) allotrope that is often stabilized by alloying with transition metals such as Zr, Mo, and Nb for technological applications. One such application involves U–Zr as nuclear fuel, where radiation damage and diffusion (processes heavily dependent on point defects) are of vital importance. Several systems of U are examined within a density functional theory framework utilizing projector augmented wave pseudopotentials. Two separate generalized gradient approximations of the exchange-correlation are used to calculate defect properties and are compared. The bulk modulus, the lattice constant, and the Birch–Murnaghan equation of state for the defect free bcc uranium allotrope are calculated. Defect parameters calculated include energies of formation of vacancies in the a and ? allotropes, as well as self-interstitials, Zr interstitials, and Zr substitutional defects for the ? allotrope. The results for vacancies agree very well with experimental and previous computational studies. The most probable self-interstitial site in ?-U is the 110 dumbbell, and the most probable defect location for dilute Zr in ?-U is the substitutional site. This is the first detailed study of self-defects in the bcc allotrope of U and also the first comprehensive study of dilute Zr defects in ?-U.

  15. Effects of log defects on lumber recovery.

    Treesearch

    James M. Cahill; Vincent S. Cegelka

    1989-01-01

    The impact of log defects on lumber recovery and the accuracy of cubic log scale deductions were evaluated from log scale and product recovery data for more than 3,000 logs. Lumber tally loss was estimated by comparing the lumber yield of sound logs to that of logs containing defects. The data were collected at several product recovery studies; they represent most of...

  16. Impurity Role In Mechanically Induced Defects

    SciTech Connect

    Howell, R.H.; Asoka-Kumar, P.; Hartley, J.; Sterne, P.

    2000-02-25

    An improved understanding of dislocation dynamics and interactions is an outstanding problem in the multi scale modeling of materials properties, and is the current focus of major theoretical efforts world wide. We have developed experimental and theoretical tools that will enable us to measure and calculate quantities defined by the defect structure. Unique to the measurements is a new spectroscopy that determines the detailed elemental composition at the defect site. The measurements are based on positron annihilation spectroscopy performed with a 3 MeV positron beam [1]. Positron annihilation spectroscopy is highly sensitive to dislocations and associated defects and can provide unique elements of the defect size and structure. Performing this spectroscopy with a highly penetrating positron beam enables flexibility in sample handling. Experiments on fatigued and stressed samples have been done and in situ measurement capabilities have been developed. We have recently performed significant upgrades to the accelerator operation and novel new experiments have been performed [2-4] To relate the spectrographic results and the detailed structure of a defect requires detailed calculations. Measurements are coupled with calculated results based on a description of positions of atoms at the defect. This gives an atomistic view of dislocations and associated defects including impurity interactions. Our ability to probe impurity interactions is a unique contribution to defect understanding not easily addressed by other atomistic spectroscopies.

  17. Simple intrinsic defects in InAs :

    SciTech Connect

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  18. Quantum defect analysis of HD photoionization

    SciTech Connect

    Du, N.Y.; Greene, C.H.

    1986-11-15

    A multichannel quantum defect calculation is shown to reproduce most observed features in several portions of the HD photoabsorption spectrum. The rovibrational frame transformation theory of Atabek, Dill, and Jungen is reformulated in terms of a quantum defect matrix. The calculation accounts for spectral regions far from dissociation thresholds despite its neglect of g--u mixing.

  19. Defect complexes in semiconductors and insulators

    NASA Astrophysics Data System (ADS)

    Raebiger, Hannes

    2010-03-01

    The interaction of isolated defects and impurities (concentration upto ˜10^18 cm-3) is usually rationalized as that of point charges in a dielectric medium, but as defect concentrations are in the order of atomic percent (˜10^21 cm-3), the statistical probability for two or more defects to sit on neighboring sites, forming a cluster or complex, becomes significant [1]. The formation of such clusters changes the local chemical environment, which in turn affects the electronic (and optical and magnetic) properties of the constituent defects non-trivially. To understand these changes, I study a variety of bound defect complexes in wide-gap semiconductors, composed of both deep and shallow defects, focusing on the shifting of the gap levels caused by defect--defect chemical interactions. First the electronic structure is calculated from first principles calculations, and then I will outline a simple theory that describes the level shifts due to cluster formation qualitatively and semi-quantitatively in terms local atomic shielding constants derived from local charge self-regulation [2].[4pt] [1] R. Behringer, J. Chem. Phys. 29, 537 (1958).[0pt] [2] H. Raebiger, S. Lany, and A. Zunger, Nature 453, 763 (2008).

  20. Biomaterials for reconstruction of cranial defects

    NASA Astrophysics Data System (ADS)

    Song, Tao; Qiu, Zhi-Ye; Cui, Fu-Zhai

    2015-12-01

    Reconstruction of cranial defect is commonly performed in neurosurgical operations. Many materials have been employed for repairing cranial defects. In this paper, materials used for cranioplasty, including autografts, allografts, and synthetic biomaterials are comprehensively reviewed. This paper also gives future perspective of the materials and development trend of manufacturing process for cranioplasty implants.

  1. Unsound defect volume in hardwood pallet cants

    Treesearch

    Philip Araman; Matt Winn; Firoz Kabir; Xavier Torcheux; Guillaume Loizeaud

    2003-01-01

    A study was conducted to determine the percentage of unsound defect volume to sound/clear wood in pallet cants at selected sawmills in Virginia and West Virginia. Splits,wane, shake, holes, decay, unsound knots, bark pockets, and mechanical defects were all considered to be unsound. Data were collected from seven Appalachian area sawmills for four hardwood species: red...

  2. Orbital dystopia due to orbital roof defect.

    PubMed

    Rha, Eun Young; Joo, Hong Sil; Byeon, Jun Hee

    2013-01-01

    We performed a retrospective review of patients who presented with delayed dystopia as a consequence of an orbital roof defect due to fractures and nontraumatic causes to search for a correlation between orbital roof defect size and surgical indications for the treatment thereof. Retrospective analyses were performed in 7 patients, all of whom presented with delayed dystopia due to orbital roof defects, between January 2001 and June 2011. The causes of orbital roof defects were displaced orbital roof fractures (5 cases), tumor (1 case), and congenital sphenoid dysplasia (1 case). All 7 patients had initially been treated conservatively and later presented with significant dystopia. The sizes of the defects were calculated on computed tomographic scans. Among the 7 patients, aspiration of cerebrospinal fluid, which caused ocular symptoms, in 1 patient with minimal displaced orbital roof and reconstruction with calvarial bone, titanium micromesh, or Medpor in 6 other patients were performed. The minimal size of the orbital roof in patients who underwent orbital roof reconstruction was 1.2 cm (defect height) x 1.0 cm (defect length), 0.94 cm(2). For all patients with orbital dystopia, displacement of the globe was corrected without any complications, regardless of whether the patient was evaluated grossly or by radiology. In this retrospective study, continuous monitoring of clinical signs and active surgical management should be considered for cases in which an orbital roof defect is detected, even if no definite symptoms are noted, to prevent delayed sequelae.

  3. Point Defect Structure of Cr203

    DTIC Science & Technology

    1987-10-01

    11 2.2.5 Effects of Impurities on Defect Equilibria .................. 14 2.3 Electrical Conductivity...both cationic vacancies and interstitials ........................................ 15 2.4 The impurity effect on the defect structure of a P-type...25 2.7 Seebeck effect of a semiconductor ................................................ 27 2.8 Oxygen partial pressure

  4. 7 CFR 52.780 - Defects.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... free from defects may be given a score of 27 to 30 points. “Practically free from defects” means that... in Table IV. (c) (B) classification. Canned red tart pitted cherries that are reasonably free from defects may be given a score of 24 to 26 points. Canned red tart pitted cherries that fall into this...

  5. 7 CFR 52.780 - Defects.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... Defects. (a) General. The factor of defects refers to the degree of freedom from harmless extraneous... given a score of 24 to 26 points. Canned red tart pitted cherries that fall into this classification may... red tart pitted cherries that fall into this classification shall not be graded above U.S. Grade...

  6. Line defects and (framed) BPS quivers

    NASA Astrophysics Data System (ADS)

    Cirafici, Michele

    2013-11-01

    The BPS spectrum of certain = 2 supersymmetric field theories can be determined algebraically by studying the representation theory of BPS quivers. We introduce methods based on BPS quivers to study line defects. The presence of a line defect opens up a new BPS sector: framed BPS states can be bound to the defect. The defect can be geometrically described in terms of laminations on a curve. To a lamination we associate certain elements of the Leavitt path algebra of the BPS quiver and use them to compute the framed BPS spectrum. We also provide an alternative characterization of line defects by introducing framed BPS quivers. Using the theory of (quantum) cluster algebras, we derive an algorithm to compute the framed BPS spectra of new defects from known ones. Line defects are generated from a framed BPS quiver by applying certain sequences of mutation operations. Framed BPS quivers also behave nicely under a set of "cut and join" rules, which can be used to study how = 2 systems with defects couple to produce more complicated ones. We illustrate our formalism with several examples.

  7. Defective Artemis causes mild telomere dysfunction.

    PubMed

    Yasaei, Hemad; Slijepcevic, Predrag

    2010-05-26

    Repair of DNA double strand breaks by non-homologous end joining (NHEJ) requires several proteins including Ku, DNA-PKcs, Artemis, XRCC4, Ligase IV and XLF. Two of these proteins, namely Ku and DNA-PKcs, are also involved in maintenance of telomeres, chromosome end-structures. In contrast, cells defective in Ligase IV and XRCC4 do not show changes in telomere length or function suggesting that these proteins are not involved in telomere maintenance. Since a mouse study indicated that defective Artemis may cause telomere dysfunction we investigated the effects of defective Artemis on telomere maintenance in human cells. We observed significantly elevated frequencies of telomeric fusions in two primary fibroblast cell lines established from Artemis defective patients relative to the control cell line. The frequencies of telomeric fusions increased after exposure of Artemis defective cells to ionizing radiation. Furthermore, we observed increased incidence of DNA damage at telomeres in Artemis defective cells that underwent more than 32 population doublings using the TIF (Telomere dysfunction Induced Foci) assay. We have also inhibited the expression levels of DNA-PKcs in Artemis defective cell lines by either using synthetic inhibitor (IC86621) or RNAi and observed their greater sensitivity to telomere dysfunction relative to control cells. These results suggest that defective Artemis causes a mild telomere dysfunction phenotype in human cell lines.

  8. Defective Artemis causes mild telomere dysfunction

    PubMed Central

    2010-01-01

    Background Repair of DNA double strand breaks by non-homologous end joining (NHEJ) requires several proteins including Ku, DNA-PKcs, Artemis, XRCC4, Ligase IV and XLF. Two of these proteins, namely Ku and DNA-PKcs, are also involved in maintenance of telomeres, chromosome end-structures. In contrast, cells defective in Ligase IV and XRCC4 do not show changes in telomere length or function suggesting that these proteins are not involved in telomere maintenance. Since a mouse study indicated that defective Artemis may cause telomere dysfunction we investigated the effects of defective Artemis on telomere maintenance in human cells. Results We observed significantly elevated frequencies of telomeric fusions in two primary fibroblast cell lines established from Artemis defective patients relative to the control cell line. The frequencies of telomeric fusions increased after exposure of Artemis defective cells to ionizing radiation. Furthermore, we observed increased incidence of DNA damage at telomeres in Artemis defective cells that underwent more than 32 population doublings using the TIF (Telomere dysfunction Induced Foci) assay. We have also inhibited the expression levels of DNA-PKcs in Artemis defective cell lines by either using synthetic inhibitor (IC86621) or RNAi and observed their greater sensitivity to telomere dysfunction relative to control cells. Conclusion These results suggest that defective Artemis causes a mild telomere dysfunction phenotype in human cell lines. PMID:20678254

  9. Defect chemistry of silver selenogallate

    NASA Astrophysics Data System (ADS)

    Whittaker, Matthew Thomas

    2007-12-01

    The source of 9.3 mum absorption in silver selenogallate, AgGaSe 2 was investigated. Infrared spectrophotometric analysis of two as-received, reportedly stoichiometric, single crystals found 9.3 mum absorption coefficients of 0.109 and 0.101 cm-1. Infrared transmission of the slabs was otherwise uniform at 0.007 cm-1 through the range 6--12 gym. X-ray fluorescence measurements did not indicate an extrinsic impurity was responsible for the absorption. Intrinsic defect reactions were investigated and a Brouwer diagram was constructed to determine probable native defects. Analysis of the Brouwer diagram led to the hypothesis that the 9.3 mum absorption was caused by a native selenium vacancy. A series of heat treatments were conducted at 790°C with selenium partial pressures of 0.026, 0.040, 0.057, 0.138, and 0.243 atmospheres. Heat treatments below 0.060 atmospheres selenium partial pressure resulted in null or increased absorption at 9.3 mum up to 0.128 cm-1. Heat treatment at 0.243 atmospheres selenium partial pressure resulted in a decrease of the 9.3 mum absorption coefficient of 63% to 0.037 cm-1. A linear least-squares regression of the 9.3 mum absorption coefficient versus selenium partial pressure during heat treatment resulted in an equation for the absorption coefficient. alpha9.3mum = -0.4048 (PSe) atm -1cm-1 + 0.1322cm -1. The highest electrical resistivity of AgGaSe2 was measured at 7.6 x 1011 Ocm for a crystal with a 9.3 mum absorption coefficient of 0.037 cm-1. A linear least-squares regression of the 9.3 mum absorption coefficient versus bulk electrical resistivity resulted in an equation for the resistivity: rho = -7 x 1012 alpha9.3mumO cm2 + 1 x 1012 O cm. Thus, the electrical resistivity increases as the stoichiometric composition is approached and may be used as a measure of stoichiometry. The deleterious 9.3 mum absorption has not been entirely eliminated; however, the reduction in the 9.3 mum absorption coefficient from greater than 0.100 cm-1

  10. Defective Reduction in Frozen Pie Manufacturing Process

    NASA Astrophysics Data System (ADS)

    Nooted, Oranuch; Tangjitsitcharoen, Somkiat

    2017-06-01

    The frozen pie production has a lot of defects resulting in high production cost. Failure mode and effect analysis (FMEA) technique has been applied to improve the frozen pie process. Pareto chart is also used to determine the major defects of frozen pie. There are 3 main processes that cause the defects which are the 1st freezing to glazing process, the forming process, and the folding process. The Risk Priority Number (RPN) obtained from FMEA is analyzed to reduce the defects. If RPN of each cause exceeds 45, the process will be considered to be improved and selected for the corrective and preventive actions. The results showed that RPN values decreased after the correction. Therefore, the implementation of FMEA technique can help to improve the performance of frozen pie process and reduce the defects approximately 51.9%.

  11. Characterizing solute-lean defects in superalloys

    NASA Astrophysics Data System (ADS)

    Samuelsson, E.; Domingue, J. A.; Maurer, G. E.

    1990-08-01

    Solute-lean defects, commonly called white spots, are frequently found in superalloys. These defects limit the service life of components made from superalloys, and alloy producers have devoted intense study to their characterization and elimination. Recent work shows that solute lean defects can be classified as "discrete," "diffuse" and "mini," and can be further classified into "clean" and "dirty" white spots. More than one formation mechanism for white spots is exemplified by the chemical and morphological differences between discrete, diffuse and mini white spots. White spot detection depends on the thermomechanically developed precipitation of hardening phases, coupled with specific etches that preferentially react to microstructure differences. The white spot defect is indigenous to the vacuum arc remelting process, but defect formation can be minimized by careful process control.

  12. Eggshell defects detection based on color processing

    NASA Astrophysics Data System (ADS)

    Garcia-Alegre, Maria C.; Ribeiro, Angela; Guinea, Domingo; Cristobal, Gabriel

    2000-03-01

    The automatic classification of defective eggs constitutes a fundamental issue at the poultry industry for both economical and sanitary reasons. The early separation of eggs with spots and cracks is a relevant task as the stains can leak while progressing on the conveyor-belts, degrading all the mechanical parts. Present work is focused on the implementation of an artificial vision system for detecting in real time defective eggs at the poultry farm. First step of the algorithmic process is devoted to the detection of the egg shape to fix the region of interest. A color processing is then performed only on the eggshell to obtain an image segmentation that allows the discrimination of defective eggs from clean ones in critic time. The results are presented to demonstrate the validity of the proposed visual process on a wide sample of both defective and non-defective eggs.

  13. Topological defect dynamics in operando battery nanoparticles

    NASA Astrophysics Data System (ADS)

    Ulvestad, Andrew; Meng, Shirley; Shpyrko, Oleg

    2015-03-01

    Topological defects are ubiquitous in physics and manifest themselves as magnetic monopoles in quantum field theories and crystallographic imperfections in condensed matter systems. In the latter, the defect properties determine many of the material's properties and as such represent substantial novel opportunities for design and optimization of desired functionalities through deliberate defect engineering and manipulation. However, this approach of ``defect choreography'' currently suffers from the lack of suitable nanoscale probes to track buried single defects in-situ and in-operando. Here we report 3D imaging of single edge dislocations and their motion in an individual nanoparticle under operando conditions in a Lithium ion battery. We further observe the dislocation act as a nucleation point during the structural phase transformation. We find that the region near the dislocation enters a negative Poisson's ratio, or auxetic, regime at high voltage. Dislocation imaging is thus a powerful nanotechnology and it opens a new, powerful avenue for facilitating improvement of nanostructured devices.

  14. Native point defects in GaSb

    SciTech Connect

    Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J.

    2014-10-14

    We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

  15. Wavenumber and Defect Distributions in Undulation Chaos

    NASA Astrophysics Data System (ADS)

    Daniels, Karen E.; Bodenschatz, Eberhard

    2000-11-01

    We report experimental results on thermally driven convection in a large aspect ratio inclined layer with a fluid of Prandtl number σ ≈ 1. Very close to the onset of convection for inclination angles between 20 and 70 degrees, we find the defect turbulent state of undulation chaos (Daniels, Plapp, and Bodenschatz. Phys. Rev. Lett. 84:5320). We characterize this state by determining the defect locations and the wavenumber distribution. A snapshot of the pattern, as well as its wavenumber distribution, can be well-reconstructed from a perfect underlying undulation pattern and the phase field given by the point defects. The defect density distribution shows a crossover from a Poisson to a squared Poisson distribution. By measuring the creation, annihilation, inflow, and outflow rates of defects we can quantitatively explain this behavior. This work is supported by the National Science Foundation DMR-0072077.

  16. Woodgrain defect on tinned steel Flandres foil

    SciTech Connect

    Sarkis, A.M.; Robin, A. Souza, V.A.; Suzuki, P.A.

    2011-06-15

    Tin electrocoated steel strip, also referred to as Flandres foil, is largely used for manufacturing food containers. Tinplates must have good corrosion resistance, workability, weldability, as well as a bright appearance. The woodgrain defect, a not yet fully understood defect that occurs on tinplates and accounts for their high scrap rate, consists of alternate bands of bright/dull reflectivity and resembles longitudinally cut wood. Observations of the woodgrain defect by scanning electron microscopy showed that the molten tin spreads irregularly during both the melting and solidification stages. X-ray diffraction analyses showed that the metallic tin tended to crystallize in the (200) direction for coupons with and without the woodgrain defect. Nevertheless, the preferential orientation degree decreased for coupons with the woodgrain defect. The rocking curves, also known as omega-scan, showed that the tin grains were uniformly aligned parallel to the strip surface for coupons with no defects, whereas for tinplates with woodgrain, the tin grains were not uniformly oriented, probably due to the misalignment of the grains in relation to the surface. - Graphical abstract: The woodgrain defect occurs on Flandres tinplates and consists in the formation of alternate bands of different reflectivity (bright/dull), which looks like longitudinally cut wood. X-ray diffractometry showed that the typical bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains, whereas in tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due to the misalignment of the (200) Sn planes relative to the surface. Research highlights: {yields} The bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains. {yields} The woodgrain defect on tinplate consists in alternate bands of bright/dull appearance. {yields} In tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due

  17. Point defects at the ice (0001) surface.

    PubMed

    Watkins, Matthew; VandeVondele, Joost; Slater, Ben

    2010-07-13

    Using density functional theory we investigate whether intrinsic defects in ice surface segregate. We predict that hydronium, hydroxide, and the Bjerrum L- and D-defects are all more stable at the surface. However, the energetic cost to create a D-defect at the surface and migrate it into the bulk crystal is smaller than its bulk formation energy. Absolute and relative segregation energies are sensitive to the surface structure of ice, especially the spatial distribution of protons associated with dangling hydrogen bonds. It is found that the basal plane surface of hexagonal ice increases the bulk concentration of Bjerrum defects, strongly favoring D-defects over L-defects. Dangling protons associated with undercoordinated water molecules are preferentially injected into the crystal bulk as Bjerrum D-defects, leading to a surface dipole that attracts hydronium ions. Aside from the disparity in segregation energies for the Bjerrum defects, we find the interactions between defect species to be very finely balanced; surface segregation energies for hydronium and hydroxide species and trapping energies of these ionic species with Bjerrum defects are equal within the accuracy of our calculations. The mobility of the ionic hydronium and hydroxide species is greatly reduced at the surface in comparison to the bulk due to surface sites with high trapping affinities. We suggest that, in pure ice samples, the surface of ice will have an acidic character due to the presence of hydronium ions. This may be important in understanding the reactivity of ice particulates in the upper atmosphere and at the boundary layer.

  18. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    SciTech Connect

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is the summary of the third workshop on the role of point defects and defect complexes in silicon device processing. The workshop was organized: (1) to discuss recent progress in the material quality produced by photovoltaic Si manufacturers, (2) to foster the understanding of point defect issues in Si device processing, (3) to review the effects of inhomogeneities on large- area solar cell performance, (4) to discuss how to improve Si solar cell processing, and (5) to develop a new understanding of gettering, defect passivation, and defect annihilation. Separate abstract were prepared for the individual papers, for the database.

  19. Interleukin-6 Stimulates Defective Angiogenesis.

    PubMed

    Gopinathan, Ganga; Milagre, Carla; Pearce, Oliver M T; Reynolds, Louise E; Hodivala-Dilke, Kairbaan; Leinster, David A; Zhong, Haihong; Hollingsworth, Robert E; Thompson, Richard; Whiteford, James R; Balkwill, Frances

    2015-08-01

    The cytokine IL6 has a number of tumor-promoting activities in human and experimental cancers, but its potential as an angiogenic agent has not been fully investigated. Here, we show that IL6 can directly induce vessel sprouting in the ex vivo aortic ring model, as well as endothelial cell proliferation and migration, with similar potency to VEGF. However, IL6-stimulated aortic ring vessel sprouts had defective pericyte coverage compared with VEGF-stimulated vessels. The mechanism of IL6 action on pericytes involved stimulation of the Notch ligand Jagged1 as well as angiopoietin2 (Ang2). When peritoneal xenografts of ovarian cancer were treated with an anti-IL6 antibody, pericyte coverage of vessels was restored. In addition, in human ovarian cancer biopsies, there was an association between levels of IL6 mRNA, Jagged1, and Ang2. Our findings have implications for the use of cancer therapies that target VEGF or IL6 and for understanding abnormal angiogenesis in cancers, chronic inflammatory disease, and stroke.

  20. Epidemiology of neural tube defects.

    PubMed

    Frey, Lauren; Hauser, W Allen

    2003-01-01

    Neural tube defects (NTDs)-malformations secondary to abnormal neural tube closure between the third and fourth weeks of gestational age-have a complex and imperfectly understood etiology in which both genetic and environmental factors appear to be involved. A number of specific chromosomal or single-gene disorders, presumably not affected by environmental influences, are associated with the development of NTDs, but such syndromal cases account for a small proportion of NTDs in live-born infants. Analysis of recurrence patterns within families and of twin-concordance data provides evidence of a genetic influence in nonsyndromal cases, but factors such as socioeconomic status and geographic area (independent of race or ethnicity) are also associated with variations in the incidence of NTDs. The prevalence at birth of both anencephaly and spina bifida has decreased, but the advent of antenatal diagnosis and elective termination of affected pregnancies has undermined the reliability of birth prevalence rate as an estimate of incidence. Some occupational and other exposures, including maternal use of antiepileptic drugs (AEDs), are associated with increased risk for NTDs. Among women who have had an NTD-affected pregnancy, recurrence risk is markedly higher than the risk for a first NTD-affected pregnancy in the general population. There is strong evidence, overall, for a protective effect of adequate folate consumption. In some high-risk groups, however, such as women taking AEDs, folate supplementation has not been proven to reduce NTD risk.

  1. The defective RNAs of Closteroviridae

    PubMed Central

    Bar-Joseph, Moshe; Mawassi, Munir

    2013-01-01

    The family Closteroviridae consists of two genera, Closterovirus and Ampelovirus with monopartite genomes transmitted respectively by aphids and mealybugs and the Crinivirus with bipartite genomes transmitted by whiteflies. The Closteroviridae consists of more than 30 virus species, which differ considerably in their phytopathological significance. Some, like beet yellows virus and citrus tristeza virus (CTV) were associated for many decades with their respective hosts, sugar beets and citrus. Others, like the grapevine leafroll-associated ampeloviruses 1, and 3 were also associated with their grapevine hosts for long periods; however, difficulties in virus isolation hampered their molecular characterization. The majority of the recently identified Closteroviridae were probably associated with their vegetative propagated host plants for long periods and only detected through the considerable advances in dsRNA isolation and sequencing of PCR amplified replicons. Molecular characterization of CTV and several other Closteroviridae revealed that, in addition to genomic and subgenomic RNAs, infected plants contain several different subviral defective RNAs (dRNAs). The roles and biological functions of dRNAs associated with Closteroviridae remain terra incognita. PMID:23734149

  2. Reconstruction of posterior trunk defects.

    PubMed

    Ramasastry, S S; Schlechter, B; Cohen, M

    1995-01-01

    A high rate of success can be expected in the management of posterior trunk defects with muscle flaps. The surgeon has to adhere closely to the basic reconstructive principles of adequate debridement of all necrotic or devitalized tissues; management of infection with local wound care and appropriate antibiotic therapy; and coverage with well-vascularized tissue to obliterate any residual dead space and to cover bone grafts, orthopedic hardware, and vital structures such as the dura and spinal cord. Flap selection is also of paramount importance for success, and only muscles with appropriate arc of rotation, vascularity (vascular pedicles outside the field of radiation injury, or intact vascularity following previous procedures) and bulk should be used. Adequate flap mobilization to obtain a tension-free closure and judicious use of drains and perioperative antibiotic agents are essential. Occasionally, microvascular free-tissue transfer may be necessary if local flaps are unavailable. The complications of flap reconstruction include partial flap loss, persistent dead space for lack of adequate muscle bulk, and persistent infection. Debridement and re-advancement of the flap is adequate in most cases. If there is significant or total flap loss, however, a second flap reconstruction is often necessary to obliterate the dead space and protect vital structures.

  3. DIVAS: an integrated networked system for mask defect dispositioning and defect management

    NASA Astrophysics Data System (ADS)

    Munir, Saghir; Bald, Dan; Tolani, Vikram; Ghadiali, Firoz

    2003-06-01

    Mask quality is a prime concern to the Intel Mask Operation (IMO) and the Intel wafer fabrication customers. Extreme concern is taken to inspect and repair all defects before shipment. Given that the classification and repair of defects detected by inspection systems is labor intensive, the procedure is prone to human error. Futhermore, since operators manually disposition hundreds of defects each day, it is virtually impossible to eliminate all misclassifications. Due to diffraction effects, not all defects resolve on a wafer. Hence, a defect that an operator may classify as 'real' may indeed be 'lithographically insignifincant'. Conversely an operator may miss a defect that prints, causing a serious reduction in product yield. The DIVAS (Defect, Inspection, Viewing, Archiving and Simulation) system has been described previously and was developed to address these manual classification issues. This paper outlines the fully automated system deployed in a production environment.

  4. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  5. Rotational defects in cyclotrimethylene trinitramine (RDX) crystals

    SciTech Connect

    Pal, A.; Picu, R. C.

    2014-01-28

    Cyclotrimethylene trinitramine (RDX) crystalizes in the orthorhombic α-phase at the ambient pressure and temperature. In principle, the point defects commonly found in monatomic crystals, such as vacancies and interstitials, may exist in RDX as well. However, in molecular crystals one encounters additional point defects associated with the distortion of the molecules. A set of rotational defects are described in this article. These are molecules which are located in the proper positions in the crystal but are rotated relative to the molecules in the perfect crystal, and their ring is slightly puckered. The energetic barriers for defect formation and for their annealing back to the perfect crystal configuration are computed using an atomistic model. It is shown that the formation energy of rotational defects is smaller than the vacancy formation energy. Such defects are identified in the cores of dislocations in RDX and hence their concentration in the crystal is expected to increase during plastic deformation. The importance of such point defects is related to their role in phonon scattering and in dislocation-mediated plastic deformation.

  6. Reduction in Defect Content in ODS Alloys

    SciTech Connect

    Ritherdon, J.; Jones, A.R.

    2000-02-01

    The work detailed within this report is a continuation of earlier work that was carried out under contract number IDX-SY382V. The earlier work comprised a literature review of the sources and types of defects found principally in Fe-based ODS alloys together with a series of experiments designed to identify defects in ODS Fe{sub 3}Al material and recommend methods of defect reduction. Defects found in the Mechanically Alloyed (MA) ODS Fe{sub 3}Al included regions of incomplete MA, porosity, intrusions and fine-grained stringers. Some defects tended to be found in association with one another e.g. intrusions and fine-grained stringers. Preliminary powder separation experiments were also performed. The scope and objectives of the present work were laid out in the technical proposal ``Reduction in Defect Content in ODS Alloys--II'' which formed the basis of amendment 3 of the current contract. The current studies were devised in the context of the preceding work with a view to extending and concluding certain experiments while exploring new avenues of investigation of defect control and reduction where appropriate. All work proposed was within the context of achieving an ODS Fe{sub 3}Al alloy of improved overall quality and potential creep performance (particularly) in the consolidated, release condition. The interim outturn of the experimental work performed is also reported.

  7. Robust defect segmentation in woven fabrics

    SciTech Connect

    Sari-Sarraf, H.; Goddard, J.S. Jr.

    1997-12-01

    This paper describes a robust segmentation algorithm for the detection and localization of woven fabric defects. The essence of the presented segmentation algorithm is the localization of those events (i.e., defects) in the input images that disrupt the global homogeneity of the background texture. To this end, preprocessing modules, based on the wavelet transform and edge fusion, are employed with the objective of attenuating the background texture and accentuating the defects. Then, texture features are utilized to measure the global homogeneity of the output images. If these images are deemed to be globally nonhomogeneous (i.e., defects are present), a local roughness measure is used to localize the defects. The utility of this algorithm can be extended beyond the specific application in this work, that is, defect segmentation in woven fabrics. Indeed, in a general sense, this algorithm can be used to detect and to localize anomalies that reside in images characterized by ordered texture. The efficacy of this algorithm has been tested thoroughly under realistic conditions and as a part of an on-line fabric inspection system. Using over 3700 images of fabrics, containing 26 different types of defects, the overall detection rate of this approach was 89% with a localization accuracy of less than 0.2 inches and a false alarm rate of 2.5%.

  8. Exploring atomic defects in molybdenum disulphide monolayers

    NASA Astrophysics Data System (ADS)

    Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

    2015-02-01

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm-2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  9. Exploring atomic defects in molybdenum disulphide monolayers

    PubMed Central

    Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

    2015-01-01

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. PMID:25695374

  10. Defects and impurities in mercuric iodine processing

    SciTech Connect

    van Scyoc, J.M.; James, R.B.; Schlesinger, T.E.; Gilbert, T.S.

    1996-03-01

    In the fabrication of mercuric iodide HgI{sub 2} room temperature radiation detectors, as in any semiconductor process, the quality of the final device is very sensitive to the impurities and defects present. Each process step can change the effects of existing defects, reduce the number of defects, or introduce new defects. In HgI{sub 2} detectors these defects act as trapping and recombination centers, thereby degrading immediate performance and leading to unstable devices. In this work we characterized some of the defects believed to strongly affect detector operation. Specifically, we studied impurities that are known to be present in typical HgI{sub 2} materials. Leakage current measurements were used to study the introduction and characteristics of these impurities, as such experiments reveal the mobile nature of these defects. In particular, we found that copper, which acts as a hole trap, introduces a positively charged center that diffuses and drifts readily in typical device environments. These measurements suggest that Cu, and related impurities like silver, may be one of the leading causes of HgI{sub 2} detector failures.

  11. Modeling of Powder Bed Manufacturing Defects

    NASA Astrophysics Data System (ADS)

    Mindt, H.-W.; Desmaison, O.; Megahed, M.; Peralta, A.; Neumann, J.

    2017-09-01

    Powder bed additive manufacturing offers unmatched capabilities. The deposition resolution achieved is extremely high enabling the production of innovative functional products and materials. Achieving the desired final quality is, however, hampered by many potential defects that have to be managed in due course of the manufacturing process. Defects observed in products manufactured via powder bed fusion have been studied experimentally. In this effort we have relied on experiments reported in the literature and—when experimental data were not sufficient—we have performed additional experiments providing an extended foundation for defect analysis. There is large interest in reducing the effort and cost of additive manufacturing process qualification and certification using integrated computational material engineering. A prerequisite is, however, that numerical methods can indeed capture defects. A multiscale multiphysics platform is developed and applied to predict and explain the origin of several defects that have been observed experimentally during laser-based powder bed fusion processes. The models utilized are briefly introduced. The ability of the models to capture the observed defects is verified. The root cause of the defects is explained by analyzing the numerical results thus confirming the ability of numerical methods to provide a foundation for rapid process qualification.

  12. Defects and metrology of ultrathin resist films

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Cobb, Jonathan L.; Dentinger, Paul M.; Henderson, Craig C.; Rao, Veena; Monahan, Kevin M.; Luo, David; Pike, Christopher

    2000-06-01

    Defectivity in spin-coated, but unpatterned ultrathin resist (UTR) films (defectivity will present an issue in EUV (13.4-nm) and 157-nm lithographic technologies. These are the lithographic regimes where absorption issues mandate the use of ultrathin resists. Four resist samples formulated from the same Shipley UV6 polymer batch and having the same polymer molecular weight properties but different viscosities, were spin-coated at spin speeds ranging from 1000 to 5000 RPM on a production-grade track in a Class 1 pilot line facility. Defect inspection was carried out with KLA SP1/TBI tool, while defect review was carried out with JEOL 7515 SEM tool and KLA Ultrapointe Confocal Review Station (CRS) Microscope. The results obtained are related to the physical properties of the resist polymers, as well as to spin coating parameters. Also, the results of the defect inspection, review, characterization, and pareto are compared to those obtained on baseline thick resists (>= 3500 Angstrom) processed under similar condition as the ultra-thin resists. The results show that for a well-optimized coating process and within the thickness range explored (800 - 4200 Angstrom), there is no discernible dependence of defectivity on film thickness of the particular resists studied and on spin speed. Also assessed is the capability of the current metrology toolset for inspecting, reviewing, and classifying the various types of defects in UTR films.

  13. Platelet rich fibrin in jaw defects

    NASA Astrophysics Data System (ADS)

    Nica, Diana; Ianes, Emilia; Pricop, Marius

    2016-03-01

    Platelet rich fibrin (PRF) is a tissue product of autologous origin abundant in growth factors, widely used in regenerative procedures. Aim of the study: Evaluation of the regenerative effect of PRF added in the bony defects (after tooth removal or after cystectomy) Material and methods: The comparative nonrandomized study included 22 patients divided into 2 groups. The first group (the test group) included 10 patients where the bony defects were treated without any harvesting material. The second group included 12 patients where the bony defects were filled with PRF. The bony defect design was not critical, with one to two walls missing. After the surgeries, a close clinically monitoring was carried out. The selected cases were investigated using both cone beam computer tomography (CBCT) and radiographic techniques after 10 weeks postoperatively. Results: Faster bone regeneration was observed in the bony defects filled with PRF comparing with the not grafted bony defects. Conclusions: PRF added in the bony defects accelerates the bone regeneration. This simplifies the surgical procedures and decreases the economic costs.

  14. Geometric defects in quantum Hall states

    NASA Astrophysics Data System (ADS)

    Gromov, Andrey

    2016-08-01

    We describe a geometric (or gravitational) analog of the Laughlin quasiholes in fractional quantum Hall states. Analogously to the quasiholes, these defects can be constructed by an insertion of an appropriate vertex operator into the conformal block representation of a trial wave function; however, unlike the quasiholes these defects are extrinsic and do not correspond to true excitations of the quantum fluid. We construct a wave function in the presence of such defects and explain how to assign an electric charge and a spin to each defect and calculate the adiabatic, non-Abelian statistics of the defects. The defects turn out to be equivalent to the genons in that their adiabatic exchange statistics can be described in terms of representations of the mapping class group of an appropriate higher genus Riemann surface. We present a general construction that, in principle, makes it possible to calculate the statistics of Zn genons for any "parent" topological phase. We illustrate the construction on the example of the Laughlin state and perform an explicit calculation of the braiding matrices. In addition to non-Abelian statistics, geometric defects possess a universal Abelian overall phase, determined by the gravitational anomaly.

  15. Rail Defect Detection Using Ultrasonic Surface Waves

    NASA Astrophysics Data System (ADS)

    Edwards, R. S.; Jian, X.; Fan, Y.; Dixon, S.

    2006-03-01

    Current testing of the rail network is limited in terms of both speed of testing and accuracy of detecting surface defects such as gauge corner cracking. By using ultrasonic surface waves generated and detected in a pitch-catch manner we can detect such defects with a much higher accuracy. We use electro-magnetic acoustic transducers (EMATs) to generate and detect the ultrasound. These have the advantage of being non-contact and require no couplant. It is not sufficient to merely detect the presence of a defect; hence accurate calibration of the system is required. We present measurements on calibration samples giving the response of the system to defects of different depths. Further experiments have been performed on rail samples containing real and manufactured defects, both longitudinal and transverse. Using the change in signal amplitude and frequency content we are able to give a depth and position for these defects, and these are compared with more established measurement methods. An enhancement of the signal when the receive EMAT is close to the defect is also discussed.

  16. 48 CFR 1652.215-70 - Rate Reduction for Defective Pricing or Defective Cost or Pricing Data.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... Defective Pricing or Defective Cost or Pricing Data. 1652.215-70 Section 1652.215-70 Federal Acquisition... or Defective Cost or Pricing Data. As prescribed in 1615.407-1, the following clause shall be... of cost and price analysis (community rated): Rate Reduction for Defective Pricing or Defective Cost...

  17. Defects in liquid crystal nematic shells

    NASA Astrophysics Data System (ADS)

    Fernandez-Nieves, A.; Utada, A. S.; Vitelli, V.; Link, D. R.; Nelson, D. R.; Weitz, D. A.

    2006-03-01

    We generate water/liquid crystal (LC)/water double emulsions via recent micro-capillary fluidic devices [A. S. Utada, et.al. Science 308, 537 (2005)]. The resultant objects are stabilized against coalescence by using surfactants or adequate polymers; these also fix the boundary conditions for the director field n. We use 4-pentyl-4-cyanobiphenyl (5CB) and impose tangential boundary conditions at both water/LC interfaces by having polyvinyl alcohol (PVA) dispersed in the inner and outer water phases. We confirm recent predictions [D. R. Nelson, NanoLetters 2, 1125 (2002)] and find that four strength s=+1/2 defects are present; this is in contrast to the two s=+1 defect bipolar configuration observed for bulk spheres [A. Fernandez-Nieves, et.al. Phys. Rev. Lett. 92, 105503 (2004)]. However, these defects do not lie in the vertices of a tetrahedron but are pushed towards each other until certain equilibration distance is reached. In addition to the four defect shells, we observe shells with two s=+1 defects and even with three defects, a s=+1 and two s=+1/2. We argue these configurations arise from nematic bulk distortions that become important as the shell thickness increases. Finally, by adding a different surfactant, sodium dodecyl sulphate (SDS), to the outer phase, we can change the director boundary conditions at the outermost interface from parallel to homeotropic, to induce coalescing of the two pair of defects in the four defect shell configuration to yield two defect bipolar shells.

  18. Management of extensive frontal cranioplasty defects.

    PubMed

    Hatamleh, Muhanad M; Cartmill, Maria; Watson, Jason

    2013-11-01

    Cranioplasty is a medical technique to correct cranial bone defects. Depending on the size and location of the defect, a bone substitute can be used to replace the missing bone. Frontal bone defects are important to patients in terms of cosmetics because they are visible. Advances in computer design allow the production of customized implants with improved cosmetic and functional results. This report describes hybrid optimization of three-dimensional technological methods along with traditional methods toward the manufacture of deep-buried titanium implants, restoring frontal skull defects for 4 patients. A three-dimensional model was produced from the computed tomographic scan data of 3 patients using an in-house three-dimensional printer. A new approach was followed in treating the fourth patient. The defect was restored using preoperative scan before cranioplasty. These data were transported digitally into the defect skull to recreate the bone contour required, and a three-dimensional model was produced from the "new" digital model using the three-dimensional printer. Defect areas of the patients were large and measured 101.21 × 123.35 (vertical × horizontal) in average (mm). Conventional wax-up of the defect was carried to restore normal conformity. A titanium sheet (0.5 mm) was swaged into the desired shape; however, convexity of the defect area makes titanium swaging challenging, especially at the deep lateral undercuts. Making side flanges at reasonable lengths made it easy to swage without creasing. Three-dimensional models aided to produce accurately fitting plates. Finally, the sequential method of using both digital and manual procedures is a low-cost, reliable, accurate, and reproducible method.

  19. Phenol dissociation on pristine and defective graphene

    NASA Astrophysics Data System (ADS)

    Widjaja, Hantarto; Oluwoye, Ibukun; Altarawneh, Mohammednoor; Hamra, A. A. B.; Lim, H. N.; Huang, N. M.; Yin, Chun-Yang; Jiang, Zhong-Tao

    2017-03-01

    Phenol (C6H5O‒H) dissociation on both pristine and defective graphene sheets in terms of associated enthalpic requirements of the reaction channels was investigated. Here, we considered three common types of defective graphene, namely, Stone-Wales, monovacancy and divacancy configurations. Theoretical results demonstrate that, graphene with monovacancy creates C atoms with dangling bond (unpaired valence electron), which remains particularly useful for spontaneous dissociation of phenol into phenoxy (C6H5O) and hydrogen (H) atom. The reactions studied herein appear barrierless with reaction exothermicity as high as 2.2 eV. Our study offers fundamental insights into another potential application of defective graphene sheets.

  20. Model based defect characterization in composites

    NASA Astrophysics Data System (ADS)

    Roberts, R.; Holland, S.

    2017-02-01

    Work is reported on model-based defect characterization in CFRP composites. The work utilizes computational models of the interaction of NDE probing energy fields (ultrasound and thermography), to determine 1) the measured signal dependence on material and defect properties (forward problem), and 2) an assessment of performance-critical defect properties from analysis of measured NDE signals (inverse problem). Work is reported on model implementation for inspection of CFRP laminates containing multi-ply impact-induced delamination, with application in this paper focusing on ultrasound. A companion paper in these proceedings summarizes corresponding activity in thermography. Inversion of ultrasound data is demonstrated showing the quantitative extraction of damage properties.

  1. Defect-free switchable phase grating.

    PubMed

    Lester, Garry A; Coulston, Stephen J; Strudwick, Adrian M

    2006-01-01

    Liquid-crystal-filled polymer structure devices offer a very low cost switchable spatial phase modulator. The phase profile set by the polymer structure may be varied or switched on/off with an applied field. Defects have been observed in some devices giving rise to spurious diffraction peaks. Computational modeling of the liquid-crystal director profile suggests that these defects might be suppressed if the dimensions of the liquid-crystal region are small. Experimental measurements confirm that this approach is effective in controlling the defects. This provides a route to fabrication of low-cost switchable complex diffractive devices.

  2. Defect-tolerant extreme ultraviolet nanoscale printing.

    PubMed

    Urbanski, L; Isoyan, A; Stein, A; Rocca, J J; Menoni, C S; Marconi, M C

    2012-09-01

    We present a defect-free lithography method for printing periodic features with nanoscale resolution using coherent extreme ultraviolet light. This technique is based on the self-imaging effect known as the Talbot effect, which is produced when coherent light is diffracted by a periodic mask. We present a numerical simulation and an experimental verification of the method with a compact extreme ultraviolet laser. Furthermore, we explore the extent of defect tolerance by testing masks with different defect layouts. The experimental results are in good agreement with theoretical calculations.

  3. Rational defect introduction in silicon nanowires.

    PubMed

    Shin, Naechul; Chi, Miaofang; Howe, Jane Y; Filler, Michael A

    2013-05-08

    The controlled introduction of planar defects, particularly twin boundaries and stacking faults, in group IV nanowires remains challenging despite the prevalence of these structural features in other nanowire systems (e.g., II-VI and III-V). Here we demonstrate how user-programmable changes to precursor pressure and growth temperature can rationally generate both transverse twin boundaries and angled stacking faults during the growth of <111> oriented Si nanowires. We leverage this new capability to demonstrate prototype defect superstructures. These findings yield important insight into the mechanism of defect generation in semiconductor nanowires and suggest new routes to engineer the properties of this ubiquitous semiconductor.

  4. Genetics Home Reference: congenital bile acid synthesis defect type 2

    MedlinePlus

    ... bile acid synthesis defect type 2 congenital bile acid synthesis defect type 2 Printable PDF Open All ... view the expand/collapse boxes. Description Congenital bile acid synthesis defect type 2 is a disorder characterized ...

  5. Genetics Home Reference: congenital bile acid synthesis defect type 1

    MedlinePlus

    ... bile acid synthesis defect type 1 congenital bile acid synthesis defect type 1 Printable PDF Open All ... view the expand/collapse boxes. Description Congenital bile acid synthesis defect type 1 is a disorder characterized ...

  6. 43 CFR 3830.93 - When are defects curable?

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... curable? (a) If there is a defect in your compliance with a statutory requirement, the defect is incurable... of this chapter). If your payment, recording, or filing has incurable defects, the affected mining...

  7. New Guidelines Reaffirm Prenatal Folic Acid to Curb Birth Defects

    MedlinePlus

    ... that folic acid supplements reduce the risk of neural tube defects. As it advised in 2009, the independent ... acid to prevent these potentially fatal birth defects. Neural tube defects occur when the brain or spinal cord ...

  8. Defect chemistry and defect engineering of TiO2-based semiconductors for solar energy conversion.

    PubMed

    Nowotny, Janusz; Alim, Mohammad Abdul; Bak, Tadeusz; Idris, Mohammad Asri; Ionescu, Mihail; Prince, Kathryn; Sahdan, Mohd Zainizan; Sopian, Kamaruzzaman; Mat Teridi, Mohd Asri; Sigmund, Wolfgang

    2015-12-07

    This tutorial review considers defect chemistry of TiO2 and its solid solutions as well as defect-related properties associated with solar-to-chemical energy conversion, such as Fermi level, bandgap, charge transport and surface active sites. Defect disorder is discussed in terms of defect reactions and the related charge compensation. Defect equilibria are used in derivation of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects. These defect diagrams may be used for imposition of desired semiconducting properties that are needed to maximize the performance of TiO2-based photoelectrodes for the generation of solar hydrogen fuel using photo electrochemical cells (PECs) and photocatalysts for water purification. The performance of the TiO2-based semiconductors is considered in terms of the key performance-related properties (KPPs) that are defect related. It is shown that defect engineering may be applied for optimization of the KPPs in order to achieve optimum performance.

  9. The analysis of EUV mask defects using a wafer defect inspection system

    NASA Astrophysics Data System (ADS)

    Cho, Kyoung-Yong; Park, Joo-On; Park, Changmin; Lee, Young-Mi; Kang, In-Yong; Yeo, Jeong-Ho; Choi, Seong-Woon; Park, Chan-Hoon; Lange, Steven R.; Cho, SungChan; Danen, Robert M.; Kirk, Gregory L.; Pae, Yeon-Ho

    2010-04-01

    EUVL is the strongest candidate for a sub-20nm lithography solution after immersion double-patterning. There are still critical challenges for EUVL to address to become a mature technology like today's litho workhorse, ArF immersion. Source power and stability, resist resolution and LWR (Line Width Roughness), mask defect control and infrastructure are listed as top issues. Source power has shown reasonably good progress during the last two years. Resist resolution was proven to resolve 32nm HP (Half Pitch) lines and spaces with good process windows even though there are still concerns with LWR. However, the defectivity level of blank masks is still three orders of magnitude higher than the requirement as of today. In this paper, mask defect control using wafer inspection is studied as an alternative solution to mask inspection for detection of phase defects on the mask. A previous study suggested that EUVL requires better defect inspection sensitivity than optical lithography because EUVL will print smaller defects. Improving the defect detection capability involves not only inspection system but also wafer preparation. A few parameters on the wafer, including LWR and wafer stack material and thickness are investigated, with a goal of enhancing the defect capture rate for after development inspection (ADI) and after cleaning inspection (ACI). In addition to defect sensitivity an overall defect control methodology will be suggested, involving mask, mask inspection, wafer print and wafer inspection.

  10. ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

    NASA Astrophysics Data System (ADS)

    Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

    2016-05-01

    At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

  11. Nanoparticle Solubility in Liquid Crystalline Defects

    NASA Astrophysics Data System (ADS)

    Whitmer, Jonathan K.; Armas-Perez, Julio C.; Joshi, Abhijeet A.; Roberts, Tyler F.; de Pablo, Juan J.

    2013-03-01

    Liquid crystalline materials often incorporate regions (defects) where the orientational ordering present in the bulk phase is disrupted. These include point hedgehogs, line disclinations, and domain boundaries. Recently, it has been shown that defects will accumulate impurities such as small molecules, monomer subunits or nanoparticles. Such an effect is thought to be due to the alleviation of elastic stresses within the bulk phase, or to a solubility gap between a nematic phase and the isotropic defect core. This presents opportunities for encapsulation and sequestration of molecular species, in addition to the formation of novel structures within a nematic phase through polymerization and nanoparticle self-assembly. Here, we examine the solubility of nanoparticles within a coarse-grained liquid crystalline phase and demonstrate the effects of nanoparticle size and surface interactions in determining sequestration into defect regions.

  12. New Device Approved for Esophageal Birth Defect

    MedlinePlus

    ... page: https://medlineplus.gov/news/fullstory_165596.html New Device Approved for Esophageal Birth Defect Condition affects ... 2017 MONDAY, May 15, 2017 (HealthDay News) -- A new medical device has been approved by the U.S. ...

  13. Reduction of Defects in Jewelry Manufacturing

    NASA Astrophysics Data System (ADS)

    Ayudhya, Phitchaya Phanomwan na; Tangjitsitcharoen, Somkiat

    2017-06-01

    The aim of this research was to reduce the defects of gem bracelet found during manufacturing process at a jewelry company. It was found that gem bracelet product has the highest rejects compared to the rejects found in ring, earring, and pendant products. Types of defect were classified by using Pareto Diagram consisting of gem falling, seam, unclean casting, impinge, and deformation. The causes of defect were analyzed by Cause and Effect Diagram and applied Failure Mode and Effects Analysis (FMEA) was applied during manufacturing processes. This research found that the improvement of manufacturing process could reduce the Risk Priority Number (RPN) and total of all defects by 48.70% and 48.89%, respectively.

  14. Infrared computations of defect Schur indices

    SciTech Connect

    Córdova, Clay; Gaiotto, Davide; Shao, Shu-Heng

    2016-11-18

    We conjecture a formula for the Schur index of four-dimensional N = 2 theories in the presence of boundary conditions and/or line defects, in terms of the low-energy effective Seiberg-Witten description of the system together with massive BPS excitations. We test our proposal in a variety of examples for SU(2) gauge theories, either conformal or asymptotically free. We use the conjecture to compute these defect-enriched Schur indices for theories which lack a Lagrangian description, such as Argyres-Douglas theories. We demonstrate in various examples that line defect indices can be expressed as sums of characters of the associated two-dimensional chiral algebra and that for Argyres-Douglas theories the line defect OPE reduces in the index to the Verlinde algebra.

  15. Genetic Counseling for Congenital Heart Defects

    MedlinePlus

    ... Peripheral Artery Disease Venous Thromboembolism Aortic Aneurysm More Genetic Counseling for Congenital Heart Defects Updated:Sep 12, ... person with congenital heart disease considers having children. Genetic counseling can help answer these questions and address ...

  16. Defect scanning technology in the works

    Treesearch

    Philip A. Araman; R. Conners

    1994-01-01

    This article describes the defect scanning technology being developed by Virginia Tech and U.S. Forest Service scientists in Blacksburg, Virginia to scan full sized hardwood lumber at industrial speeds.

  17. Dental Enamel Defects and Celiac Disease

    MedlinePlus

    ... Follow Us Home Health Information Digestive Diseases Dental Enamel Defects and Celiac Disease Related Topics Section Navigation Digestive Diseases Abdominal Adhesions Acid Reflux (GER & GERD) in Adults Definition & Facts ...

  18. When Your Baby Has a Birth Defect

    MedlinePlus

    ... as heart defects, cleft lip and palate, or cerebral palsy. Still, you may find yourself being both the ... the NICU Gene Therapy and Children Down Syndrome Cerebral Palsy Spina Bifida Prenatal Genetic Counseling What Is a ...

  19. Defect properties of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Stehr, J. E.; Devika, M.; Reddy, N. Koteeswara; Tu, C. W.; Chen, W. M.; Buyanova, I. A.

    2014-02-01

    In this work we examined optical and defect properties of as-grown and Ni-coated ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition by means of optically detected magnetic resonance (ODMR). Several grown-in defects are revealed by monitoring visible photoluminescence (PL) emissions and are attributed to Zn vacancies, O vacancies, a shallow (but not effective mass) donor and exchange-coupled pairs of a Zn vacancy and a Zn interstitial. It is also found that the same ODMR signals are detected in the as-grown and Ni-coated NWs, indicating that metal coatings does not significantly affect formation of the aforementioned defects and that the observed defects are located in the bulk of the NWs.

  20. Visualization of columnar defects in superconductors

    NASA Astrophysics Data System (ADS)

    Bauer, P.; Rossel, C.; Williams, E. J.; Berger, R.; Daniel, J.; Irmer, B.; Kraus, M.; Kreiselmeyer, G.; Saemann-Ischenko, G.; Karpinski, J.

    1996-02-01

    Columnar defects in single crystals of superconductors were investigated using scanning probe microscopy. We show that the observable topography strongly depends on the crystal structure as well as on the type of the interaction with the probe. In scanning tunneling microscopy studies, the low conductance of the amorphous tracks leads to tip-surface contact. Owing to this contact, the defects are imaged as hollows having a depth that primarily reflects the tunneling distance. For the high transition temperature materials, atomic force microscopy images the real defect structure as hillocks growing out of the surface. This outgrowth of amorphous material is time dependent and produced by the relaxation of irradiation-induced stress. The dynamic outgrowth of the columnar defects is discussed in terms of a so-called “tooth paste” model.

  1. Molecular Mechanisms of Midfacial Developmental Defects

    PubMed Central

    Suzuki, Akiko; Sangani, Dhruvee R.; Ansari, Afreen; Iwata, Junichi

    2015-01-01

    The morphogenesis of midfacial processes requires the coordination of a variety of cellular functions of both mesenchymal and epithelial cells to develop complex structures. Any failure or delay in midfacial development as well as any abnormal fusion of the medial and lateral nasal and maxillary prominences will result in developmental defects in the midface with a varying degree of severity, including cleft, hypoplasia, and midline expansion. In spite of the advances in human genome sequencing technology, the causes of nearly 70 percent of all birth defects, which include midfacial development defects, remain unknown. Recent studies in animal models have highlighted the importance of specific signaling cascades and genetic-environmental interactions in the development of the midfacial region. This review will summarize the current understanding of the morphogenetic processes and molecular mechanisms underlying midfacial birth defects based on mouse models with midfacial developmental abnormalities. PMID:26562615

  2. Residual Defect Density in Random Disks Deposits

    PubMed Central

    Topic, Nikola; Pöschel, Thorsten; Gallas, Jason A. C.

    2015-01-01

    We investigate the residual distribution of structural defects in very tall packings of disks deposited randomly in large channels. By performing simulations involving the sedimentation of up to 50 × 109 particles we find all deposits to consistently show a non-zero residual density of defects obeying a characteristic power-law as a function of the channel width. This remarkable finding corrects the widespread belief that the density of defects should vanish algebraically with growing height. A non-zero residual density of defects implies a type of long-range spatial order in the packing, as opposed to only local ordering. In addition, we find deposits of particles to involve considerably less randomness than generally presumed. PMID:26235809

  3. Phase measurements of EUV mask defects

    DOE PAGES

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; ...

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

  4. Phase measurements of EUV mask defects

    SciTech Connect

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; Benk, Markus P.; Goldberg, Kenneth A.; Neureuther, Andrew R.; Naulleau, Patrick P.; Waller, Laura

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than the conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.

  5. National Birth Defects Prevention Study (NBDPS)

    MedlinePlus

    ... taking multivitamins before their pregnancy. [ Read Summary ] Air Pollution and Congenital Heart Defects Many pregnant women, especially ... air quality standards to limit the amount of pollution in our air, we still do not know ...

  6. Defect trapping in ABC block copolymers

    NASA Astrophysics Data System (ADS)

    Corte, Laurent; Yamauchi, Kazuhiro; Court, Francois; Cloitre, Michel; Hashimoto, Takeji; Leibler, Ludwik

    2004-03-01

    Equilibrium morphologies in molten ABC triblock terpolymers are much more difficult to attain than in AB diblocks. In practice, it is important to know whether and how synthesis conditions influence the morphology and properties of copolymer materials. It is also relevant to understand the mechanisms of defect formation and annihilation. Indeed, a potential use of copolymers in new applications such as lithography highly depends on the ability to produce regular structures with no or few defects. We show that even the simplest lamellar structures exhibit high sensitivity to preparation conditions and that strongly trapped structural defects inherent to ABC triblock architecture cannot be removed by long annealing. Annealing can induce a transition from a lamellar structure in which A and C blocks are mixed to a lamellar structure where A, B and C are segregated. We propose reorganization mechanisms that are at the origin of some characteristic defects.

  7. Oral telangiectatic granuloma with an intrabony defect

    PubMed Central

    Rathore, Akanksha; Jadhav, Tanya; Kulloli, Anita; Singh, Archana

    2015-01-01

    Oral telangiectatic granuloma is a benign hyperplastic lesion occurring in response to trauma or chronic irritation in the oral cavity. The characteristic histological appearance comprises of typical granulation tissue with a proliferation of small thin-walled blood vessels in the loose connective tissue. We describe a case of a 36-year-old female who had a swelling in the left maxillary region which was associated with the intrabony defect. An internal bevel gingivectomy was performed, and the histopathological report was suggestive of telangiectatic granuloma. The intrabony defect was managed with the placement of platelet rich fibrin plug in the defect. A follow-up at 6 months showed no recurrence and no loss in the width of keratinized tissue. The aim of this case is to highlight the rare association of intrabony defect with telangiectatic granuloma and the need for histopathological diagnosis in such lesions. PMID:26941527

  8. Dislocation-Defect Interactions in Materials

    SciTech Connect

    Robach, J S; Robertson, I M; Ahn, D C; Sofronis, P; Wirth, B D; Arsenlis, T

    2003-02-27

    In order to develop predictive models of the mechanical response of irradiated materials it is necessary to understand the fundamental physical processes controlling the deformation. This is particularly important near yielding where local defect interactions may dominate the behavior. Dislocation-defect interactions in copper containing various densities and distributions of stacking-fault tetrahedra and small dislocation loops were examined dynamically using the in-situ TEM straining technique. Defect annihilation mechanisms as well as the conditions required to produce defect-free channels are proposed. The experimental results are compared to atomistic simulations and continuum mechanics calculations of unit interactions. Based on these observations, an improved continuum model of the mechanical behavior of irradiated materials is presented.

  9. Exploration of defect structures on graphene.

    PubMed

    Yu, Shansheng; Zheng, Weitao

    2013-02-01

    For graphene obtained by chemical vapor deposition, there are large amount of defects in the crystalline structures. The carbon atoms from the feedstock can attack the graphene surface in annealing process, which may be one of the reasons affecting the structure of graphene. In order to explore some defect structures on graphene, we investigate the adsorption of carbon adatoms and vacancies on graphene using first-principles calculations. It is demonstrated that the adatoms can form strong covalent bonds with the graphene and the C-C dimmer adsorption may be the most prolific defect model. The C adatom can even fill simple vacancy of graphene. Our numerical simulations also show that the defect structures can lead to the splitting of the mid-gap peak of perfect graphene in the electronic structures. It is suggested that its conductivity would be lower than that of the perfect graphene, which can explain the low mobility of the charge carriers in some experiments.

  10. When Your Baby Has a Birth Defect

    MedlinePlus

    ... or a heart defect ) or functional/developmental (like Down syndrome , deafness, or a metabolic disorder like phenylketonuria). Some ... in the baby, which can cause problems like Down syndrome and Turner syndrome . amniocentesis and chorionic villi sampling. ...

  11. Infrared computations of defect Schur indices

    DOE PAGES

    Córdova, Clay; Gaiotto, Davide; Shao, Shu-Heng

    2016-11-18

    We conjecture a formula for the Schur index of four-dimensional N = 2 theories in the presence of boundary conditions and/or line defects, in terms of the low-energy effective Seiberg-Witten description of the system together with massive BPS excitations. We test our proposal in a variety of examples for SU(2) gauge theories, either conformal or asymptotically free. We use the conjecture to compute these defect-enriched Schur indices for theories which lack a Lagrangian description, such as Argyres-Douglas theories. We demonstrate in various examples that line defect indices can be expressed as sums of characters of the associated two-dimensional chiral algebramore » and that for Argyres-Douglas theories the line defect OPE reduces in the index to the Verlinde algebra.« less

  12. Instilling defect tolerance in new compounds

    NASA Astrophysics Data System (ADS)

    Walsh, Aron; Zunger, Alex

    2017-10-01

    The properties of semiconducting solids are determined by the imperfections they contain. Established physical phenomena can be converted into practical design principles for optimizing defects and doping in a broad range of technology-enabling materials.

  13. Microcephaly and Other Birth Defects: Zika

    MedlinePlus

    ... Español Recommend on Facebook Tweet Share Compartir Zika and Microcephaly Microcephaly is a birth defect in ... pregnancy or has stopped growing after birth. Congenital Zika Syndrome Congenital Zika syndrome is a unique pattern ...

  14. March of Dimes Birth Defects Foundation

    MedlinePlus

    ... unit (NICU) Birth defects & other health conditions Loss & grief Tools & Resources Frequently asked health questions Ask our ... experts Calculating your due date Ovulation calendar Order bereavement materials News Moms Need Blog News & Media News ...

  15. Holographic entanglement entropy of surface defects

    NASA Astrophysics Data System (ADS)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos

    2016-04-01

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena [1] to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  16. Topological defect dynamics in operando battery nanoparticles

    NASA Astrophysics Data System (ADS)

    Ulvestad, A.; Singer, A.; Clark, J. N.; Cho, H. M.; Kim, J. W.; Harder, R.; Maser, J.; Meng, Y. S.; Shpyrko, O. G.

    2015-06-01

    Topological defects can markedly alter nanomaterial properties. This presents opportunities for “defect engineering,” where desired functionalities are generated through defect manipulation. However, imaging defects in working devices with nanoscale resolution remains elusive. We report three-dimensional imaging of dislocation dynamics in individual battery cathode nanoparticles under operando conditions using Bragg coherent diffractive imaging. Dislocations are static at room temperature and mobile during charge transport. During the structural phase transformation, the lithium-rich phase nucleates near the dislocation and spreads inhomogeneously. The dislocation field is a local probe of elastic properties, and we find that a region of the material exhibits a negative Poisson’s ratio at high voltage. Operando dislocation imaging thus opens a powerful avenue for facilitating improvement and rational design of nanostructured materials.

  17. Observing Dissipative Topological Defects with Coupled Lasers

    NASA Astrophysics Data System (ADS)

    Pal, Vishwa; Tradonsky, Chene; Chriki, Ronen; Friesem, Asher A.; Davidson, Nir

    2017-07-01

    Topological defects have been observed and studied in a wide range of systems, such as cosmology, spin systems, cold atoms, and optics, as they are quenched across a phase transition into an ordered state. These defects limit the coherence of the system and its ability to approach a fully ordered state, so revealing their origin and control is becoming an increasingly important field of research. We observe dissipative topological defects in a one-dimensional ring of phased-locked lasers, and show how their formation is related to the Kibble-Zurek mechanism and is governed in a universal manner by two competing time scales. The ratio between these two time scales depends on the system parameters, and thus offers the possibility of enabling the system to dissipate to a fully ordered, defect-free state that can be exploited for solving hard computational problems in various fields.

  18. Pulmonary complications of abdominal wall defects.

    PubMed

    Panitch, Howard B

    2015-01-01

    The abdominal wall is an integral component of the chest wall. Defects in the ventral abdominal wall alter respiratory mechanics and can impair diaphragm function. Congenital abdominal wall defects also are associated with abnormalities in lung growth and development that lead to pulmonary hypoplasia, pulmonary hypertension, and alterations in thoracic cage formation. Although infants with ventral abdominal wall defects can experience life-threatening pulmonary complications, older children typically experience a more benign respiratory course. Studies of lung and chest wall function in older children and adolescents with congenital abdominal wall defects are few; such investigations could provide strategies for improved respiratory performance, avoidance of respiratory morbidity, and enhanced exercise ability for these children.

  19. Topological Defect Dynamics in Operando Battery Nanoparticles

    SciTech Connect

    Ulvestad, A; Singer, A; Clark, J. N.; Cho, H. M.; Kim, J.W.; Harder, R.; Maser, J.; Meng, Y.S.; Shpyrko, O.G.

    2015-06-19

    Topological defects can markedly alter nanomaterial properties. This presents opportunities for "defect engineering," where desired functionalities are generated through defect manipulation. However, imaging defects in working devices with nanoscale resolution remains elusive. We report three-dimensional imaging of dislocation dynamics in individual battery cathode nanoparticles under operando conditions using Bragg coherent diffractive imaging. Dislocations are static at room temperature and mobile during charge transport. During the structural phase transformation, the lithium-rich phase nucleates near the dislocation and spreads inhomogeneously. The dislocation field is a local probe of elastic properties, and we find that a region of the material exhibits a negative Poisson's ratio at high voltage. Operando dislocation imaging thus opens a powerful avenue for facilitating improvement and rational design of nanostructured materials.

  20. This Issue: Correlates of a Defective School.

    ERIC Educational Resources Information Center

    Gilman, David Alan

    1992-01-01

    Describes correlates of defective schools: perks for very few; faulty communication; adult-centered programs; special interest group indulgence; poor professional relationships; personnel warehousing; incompetent consultants; literal interpretation of technicalities; imperial leadership; intimate relationships among personnel; incoherent…

  1. Epidemiology of neural tube defects

    PubMed Central

    Seidahmed, Mohammed Z.; Abdelbasit, Omar B.; Shaheed, Meeralebbae M.; Alhussein, Khalid A.; Miqdad, Abeer M.; Khalil, Mohamed I.; Al-Enazy, Naif M.; Salih, Mustafa A.

    2014-01-01

    Objectives: To find the prevalence of neural tube defects (NTDs), and compare the findings with local and international data, and highlight the important role of folic acid supplementation and flour fortification with folic acid in preventing NTDs. Methods: This is a retrospective study of data retrieved from the medical records of live newborn infants admitted to the Neonatal Intensive Care Unit (NICU), Security Forces Hospital (SFH), Riyadh, Saudi Arabia with NTDs spanning 14 years (1996-2009). All pregnant women on their first antenatal visit to the primary care clinic were prescribed folic acid 0.5 mg daily, or 5 mg if there is a family history of NTD. The pre-fortification prevalence is compared to post-fortification, before and after excluding syndromic, genetic, and chromosomal causes. The results were compared with reports from other parts of Saudi Arabia and internationally, through a literature search using MEDLINE. Results: The prevalence of NTDs during the period was 1.2 per 1000 live births. The pre-fortification of flour with folic acid prevalence was 1.46 per 1000 live births. The post-fortification prevalence was 1.05 (p=0.103). After excluding syndromic, genetic, and chromosomal causes from calculation of the prevalence, there was a significant reduction in the prevalence, from 1.46 to 0.81 per 1000 live births (p=0.0088). Syndromic, genetic, and chromosomal causes were identified in 20 cases (19.4%). Only 2% of mothers received preconception folic acid, and only 10% of them received it during the first 4 weeks of gestation. Conclusion: Despite the implementation of fortification of flour with folic acid since 2001, the prevalence of NTDs in the Kingdom of Saudi Arabia is still high. This is due to the impact of genetic, syndromic, and chromosomal causes of NTD not preventable by folic acid. Other factors like unplanned pregnancy and lack of awareness of the role of folic acid in preventing nonsyndromic causes, play a significant role. PMID

  2. Defect classes - an overdue paradigm for CMOS IC testing

    SciTech Connect

    Hawkins, C.F.; Soden, J.M.; Righter, A.W.; Ferguson, F.J.

    1994-09-01

    The IC test industry has struggled for more than 30 years to establish a test approach that would guarantee a low defect level to the customer. We propose a comprehensive strategy for testing CMOS ICs that uses defect classes based on measured defect electrical properties. Defect classes differ from traditional fault models. Our defect class approach requires that the test strategy match the defect electrical properties, while fault models require that IC defects match the fault definition. We use data from Sandia Labs failure analysis and test facilities and from public literature. We describe test pattern requirements for each defect class and propose a test paradigm.

  3. Medial Femoral Condyle Cartilage Defect Biomechanics: Effect of Obesity, Defect Size, and Cartilage Thickness.

    PubMed

    Lacy, Kyle W; Cracchiolo, Allison; Yu, Stephen; Goitz, Henry

    2016-02-01

    Medial femoral condyle (MFC) chondral defects cause knee pain. Clinical studies have shown worse functional outcomes and cartilage defect fill rates after microfracture in obese patients (BMI ≥30) and for defects with size ≥2 cm(2). To determine the effect of obesity, defect size, and cartilage thickness on the force sustained at the base of full-thickness MFC cartilage defects during weightbearing. Controlled laboratory study. Eight human cadaveric knees were loaded in 15° of flexion. A sensor measured force across the medial compartment. The area at the base of the defect protected from load, termed the "area of containment," was quantified, and loads simulating weightbearing for BMIs of 20, 30, and 40 were applied. A full-thickness cartilage defect was created on the MFC. Cycles of loads were applied for defect sizes with diameters of 6, 8, 10, 12, 14, 16, 18, and 20 mm. A second sensor recorded force at the base of the defect for defects with diameters of 14, 16, 18, and 20 mm. Loads simulating BMI ≥30 led to a decrease in the area of containment for all defects ≥14 mm in diameter (P ≤ .038). Base of defect force increased for defects ≥16 mm in diameter (area, ≥2 cm(2)) between loaded and unloaded states (P ≤ .042) and for loads simulating BMI ≥30 (P ≤ .045). Cartilage rim thickness <2 mm showed higher base of defect force than did thickness ≥2 mm, for all BMI groups (P ≤ .025). Increased force at the base of MFC cartilage defects was observed for weightbearing loads simulating BMI ≥30, for defect size ≥2 cm(2), and for rim thickness <2 mm. This may lead to a biomechanically unfavorable environment after microfracture in these patient subsets. These biomechanical findings corroborate clinical studies that have noted worse outcomes after microfracture in patients with BMI ≥30 and cartilage defects of size ≥2 cm(2). Further clinical studies are needed to compare microfracture with other cartilage restoration procedures in these

  4. Laparoscopic Repair of Cesarean Scar Defect "Isthmocele".

    PubMed

    Urman, Bulent; Arslan, Tonguc; Aksu, Sertan; Taskiran, Cagatay

    2016-01-01

    To demonstrate the technique of laparoscopic repair of a large cesarean scar defect (isthmocele). Case report (Canadian Task Force classification III). Cesarean scar defect, also known as an isthmocele, is the result of incomplete healing of the isthmic myometrium after a low transverse uterine incision performed for cesarean section. Although mostly asymptomatic, it may cause menstrual abnormalities (typically postmenstrual spotting), chronic pelvic pain, and secondary infertility. Scar tissue dehiscence, scar pregnancy, and abnormally adherent placenta are some of the obstetric complications associated with this defect. No standardized treatment has yet been accepted. Hysteroscopy and laparoscopy are the minimally invasive approaches currently used to repair the defect. A 40-year-old patient, G2P2, presented with postmenstrual spotting and secondary infertility for the past 2 years. She had a history of 2 previous cesarean deliveries. Transvaginal ultrasound revealed a large (2.5 × 1.5 cm) niche. Thickness of the myometrium over the defect was 3 mm. Laparoscopic repair of the uterine defect was performed. The bladder that was densely adherent to the lower uterine segment was freed by careful dissection. The defect was then localized with a sharp curette placed transcervically into the uterus. The curette was pushed anteriorly to delineate the margins of the defect and puncture the ceiling of the isthmocele cavity. The fibrotic tissue that formed the ceiling and the lateral borders of the defect was excised using laparoscopic scissors. Reapproximation of the edges was done with continuous nonlocking 3-0 V-Loc sutures. The procedure took 90 minutes, and there were no associated complications. Postoperative ultrasound performed in the second month after the operation showed a minimal defect measuring 0.5 cm, with a residual myometrial thickness of 7 mm. At the time of this writing, the patient was free of symptoms. Laparoscopic repair, although not

  5. [Unawareness for homonymous visual field defect].

    PubMed

    Ito, Tomoko; Hirayama, Kazumi; Yamawaki, Rie; Kondo, Yumiko; Sakai, Shinya; Kondo, Takeo; Yamadori, Atsushi

    2003-10-01

    There was no report which dealt with the relationship between emotional state, degree of defective visual search, severity of hemianopic dyslexia, the episode when the patient became aware of the defect, and unawareness of visual loss in homonymous hemifield. To investigate the relationship between degree of awareness and those factors that might be responsible for the unawareness, including the aspects listed above. Four patients with visual field defects caused by a brain lesion after a stroke was investigated. Self rating of emotional state, search performance for an object among many placed on a table, and for text reading, as well as visual field, visual positive phenomena, and hemispatial neglect were evaluated. Degree of unawareness for field loss was evaluated by modified version of the method of Bisiach et al. (1985). In addition, the episodes when the patient became aware of the defect were asked. In accordance with the previous studies, we found no relationship between the degree of awareness of field defect and anatomic lesions, co-existence of hemispatial neglect, or the degree of awareness of hemiplegia. However, the patient with neglect was unaware of their troubles in vision at all, whereas the patients without neglect were aware of the troubles but misinterpreted them as problems of the eyes including acuity. In accordance with previous studies, co-existence of visual hallucinations or illusions seemed to be associated with awareness of visual field defect. No relationship was found between the degree of awareness of field defect and emotional state, degree of field loss, degree of defective visual search, or severity of hemianopic dyslexia. Their responses to the inquiry about the degree of awareness of field defect were not consistent. Thus, the awareness of the field defect seemed to be difficult to be kept firmly in their mind. On the other hand, the patients could remember the episode when they became aware of the defect for the first time

  6. Corrosion of surface defects in fine wires.

    PubMed

    Rentler, R M; Greene, N D

    1975-11-01

    Defects were observed on the surfaces of various fine diameter wires commonly used in biomedical applications. These surface irregularities were viewed at high magnifications using a scanning electron microscope which has a much greater depth of field than normal light microscopy. Defects include scratches, pits, and crevices, which are the result of commercial wire drawing practices. Corrosion test results show that imperfections can serve as sites for localized corrosion attack which could lead to premature failures.

  7. Neutron-induced defects in optical fibers

    SciTech Connect

    Rizzolo, S.; Morana, A.; Boukenter, A.; Ouerdane, Y.; Girard, S.; Cannas, M.; Boscaino, R.; Bauer, S.; Perisse, J.; Mace, J-R.; Nacir, B.

    2014-10-21

    We present a study on 0.8 MeV neutron-induced defects up to fluences of 10{sup 17} n/cm{sup 2} in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.

  8. Defect structure of web silicon ribbon

    NASA Technical Reports Server (NTRS)

    Cunningham, B.; Strunk, H.; Ast, D.

    1980-01-01

    The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.

  9. Neutron-induced defects in optical fibers

    NASA Astrophysics Data System (ADS)

    Rizzolo, S.; Morana, A.; Cannas, M.; Bauer, S.; Perisse, J.; Mace, J.-R.; Boscaino, R.; Boukenter, A.; Ouerdane, Y.; Nacir, B.; Girard, S.

    2014-10-01

    We present a study on 0.8 MeV neutron-induced defects up to fluences of 1017 n/cm2 in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.

  10. INNOVATIVE EDDY CURRENT PROBE FOR MICRO DEFECTS

    SciTech Connect

    Santos, Telmo G.; Vilaca, Pedro; Quintino, Luisa; Santos, Jorge dos; Rosado, Luis

    2010-02-22

    This paper reports the development of an innovative eddy current (EC) probe, and its application to micro-defects on the root of the Friction Stir Welding (FSW). The new EC probe presents innovative concept issues, allowing 3D induced current in the material, and a lift-off independence. Validation experiments were performed on aluminium alloys processed by FSW. The results clearly show that the new EC probe is able to detect and sizing surface defects about 60 microns depth.

  11. Defect Evolution in Graphene upon Electrochemical Lithiation

    SciTech Connect

    Jaber-Ansari, Laila; Puntambekar, Kanan Prakash; Tavassol, Hadi; Yildirim, Handan; Kinaci, Alper; Kumar, Rajan; Saldana, Spencer J.; Gewirth, Andrew A.; Greeley, J. P.; Chan, Maria K. Y.; Hersam, Mark C.

    2014-10-22

    Despite rapidly growing interest in the application of graphene in lithium ion batteries, the interaction of the graphene with lithium ions and electrolyte species during electrochemical cycling is not fully understood. In this work, we use Raman spectroscopy in a model system of monolayer graphene transferred on a Si(111) substrate and density functional theory (DFT) to investigate defect formation as a function of lithiation. This model system enables the early stages of defect formation to be probed in a manner previously not possible with commonly used reduced graphene oxide or multilayer graphene substrates. Using ex situ and Ar-atmosphere Raman spectroscopy, we detected a rapid increase in graphene defect level for small increments in the number of lithiation/delithiation cycles until the I(D)/I(G) ratio reaches ~1.5–2.0 and the 2D peak intensity drops by ~50%, after which the Raman spectra show minimal changes upon further cycling. Using DFT, the interplay between graphene topological defects and chemical functionalization is explored, thus providing insight into the experimental results. In particular, the DFT results show that defects can act as active sites for species that are present in the electrochemical environment such as Li, O, and F. Furthermore, chemical functionalization with these species lowers subsequent defect formation energies, thus accelerating graphene degradation upon cycling. This positive feedback loop continues until the defect concentration reaches a level where lithium diffusion through the graphene can occur in a relatively unimpeded manner, with minimal further degradation upon extended cycling. Overall, this study provides mechanistic insight into graphene defect formation during lithiation, thus informing ongoing efforts to employ graphene in lithium ion battery technology.

  12. Defects and Transport in Lithium Niobium Trioxide

    NASA Astrophysics Data System (ADS)

    Mehta, Apurva

    1990-01-01

    This dissertation presents work done on characterizing the defects and transport properties of congruent LiNbO _3. The focus of the study is the high temperature (800^circC to 1000^circC) equilibrium defect structure. The majority defects are described in terms of the 'LiNbO_3-ilmenite' defect model previously presented (26). Here the emphasis is placed on quantifying the defect concentrations. Congruent LiNbO_3 is highly nonstoichiometric. The large concentration of ionic defects present are mobile and contribute to electrical conduction. The ionic conduction was separated from the total conduction using defect chemistry and the transference number thus obtained was checked against the transference number obtained in a galvanic cell measurement. LiNbO_3 is an insulator (band gap = 4 eV). Hence one assumes that almost all of the conduction electrons are created by reduction. The degree of oxygen nonstoichiometry, a measure of the extent of chemical reduction, and the electron concentrations, were quantified as a function of oxygen partial pressure and the temperature by coulometric titration. The nonstoichiometry thus obtained was compared with nonstoichiometry obtained by TGA measurements. By fixing the phase composition of the sample in a buffered system, a set of constant composition measurements could be undertaken. These constant composition measurements were used to obtain the enthalpy of formation of conduction electrons, 1.95 eV, and the hopping energy for their motion at elevated temperatures, 0.55 eV, independently. The sum of the two energies was obtained by measuring the temperature dependence of the electronic conduction. The sum of the energies was found to be in excellent agreement with the energy obtained from equilibrium conduction. In conclusion, a quantitative and self-consistent picture of defects and their migration in LiNbO _3 was obtained.

  13. Topological Defects in Liquid Crystals: Studying the Correlation between Defects and Curvature

    NASA Astrophysics Data System (ADS)

    Melton, Charles

    2015-03-01

    Topological defects have recently been the subject of many fascinating studies in soft condensed matter physics. In particular, linking the evolution of topological defects to curvature changes has been a focus, leading possible applications in the areas such as cosmetics, pharmaceuticals, and electronics. In this study, defects in nematic liquid crystal droplets are investigated via laboratory and theoretical techniques. Nematic liquid crystal defects are reproduced via Monte Carlo simulations using a modified 2D XY-Model Hamiltonian. The simulation is performed on a curved surface to replicate a nematic droplet and examine possible defect configurations. To complement this theoretical work, we have trapped nematic droplets inside a dual-beam optical trap. This system allows controllable non-contact droplet deformation on a microscope based platform. Future work will focus on using the trap to stretch nematic droplets, correlating the changing topological defects with theoretical predictions.

  14. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    SciTech Connect

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  15. Defect Tolerant Semiconductors for Solar Energy Conversion.

    PubMed

    Zakutayev, Andriy; Caskey, Christopher M; Fioretti, Angela N; Ginley, David S; Vidal, Julien; Stevanovic, Vladan; Tea, Eric; Lany, Stephan

    2014-04-03

    Defect tolerance is the tendency of a semiconductor to keep its properties despite the presence of crystallographic defects. Scientific understanding of the origin of defect tolerance is currently missing. Here we show that semiconductors with antibonding states at the top of the valence band are likely to be tolerant to defects. Theoretical calculations demonstrate that Cu3N with antibonding valence band maximum has shallow intrinsic defects and no surface states, in contrast to GaN with bonding valence band maximum. Experimental measurements indicate shallow native donors and acceptors in Cu3N thin films, leading to 10(16)-10(17) cm(-3) doping with either electrons or holes depending on the growth conditions. The experimentally measured bipolar doping and the solar-matched optical absorption onset (1.4 eV) make Cu3N a promising candidate absorber for photovoltaic and photoelectrochemical solar cells, despite the calculated indirect fundamental band gap (1.0 eV). These conclusions can be extended to other materials with antibonding character of the valence band, defining a class of defect-tolerant semiconductors for solar energy conversion applications.

  16. Quality metrics for product defectiveness at KCD

    SciTech Connect

    Grice, J.V.

    1993-07-01

    Metrics are discussed for measuring and tracking product defectiveness at AlliedSignal Inc., Kansas City Division (KCD). Three new metrics, the metric (percent defective) that preceded the new metrics, and several alternatives are described. The new metrics, Percent Parts Accepted, Percent Parts Accepted Trouble Free, and Defects Per Million Observations, (denoted by PPA, PATF, and DPMO, respectively) were implemented for KCD-manufactured product and purchased material in November 1992. These metrics replace the percent defective metric that had been used for several years. The PPA and PATF metrics primarily measure quality performance while DPMO measures the effects of continuous improvement activities. The new metrics measure product quality in terms of product defectiveness observed only during the inspection process. The metrics were originally developed for purchased product and were adapted to manufactured product to provide a consistent set of metrics plant- wide. The new metrics provide a meaningful tool to measure the quantity of product defectiveness in terms of the customer`s requirements and expectations for quality. Many valid metrics are available and all will have deficiencies. These three metrics are among the least sensitive to problems and are easily understood. They will serve as good management tools for KCD in the foreseeable future until new flexible data systems and reporting procedures can be implemented that can provide more detailed and accurate metric computations.

  17. Reduction in Defect Content of ODS Alloys

    SciTech Connect

    Ritherdon, J

    2001-05-15

    The work detailed within this report is a continuation of earlier work carried out under contract number 1DX-SY382V. The earlier work comprises a literature review of the sources and types of defects found principally in Fe-based ODS alloys as well as experimental work designed to identify defects in the prototype ODS-Fe{sub 3}Al alloy, deduce their origins and to recommend methods of defect reduction. The present work is an extension of the experimental work already reported and concentrates on means of reduction of defects already identified rather than the search for new defect types. This report also includes results gathered during powder separation trials, conducted by the University of Groningen, Netherlands and coordinated by the University of Liverpool, involving the separation of different metallic powders in terms of their differing densities. The scope and objectives of the present work were laid out in the technical proposal ''Reduction in Defect Content in ODS Alloys-III''. All the work proposed in the ''Statement of Work'' section of the technical proposal has been carried out and all work extra to the ''Statement of Work'' falls within the context of an ODS-Fe{sub 3}Al alloy of improved overall quality and potential creep performance in the consolidated form. The outturn of the experimental work performed is reported in the following sections.

  18. A novel inspection system for cosmetic defects

    NASA Astrophysics Data System (ADS)

    Hazra, S.; Roy, R.; Williams, D.; Aylmore, R.; Hollingdale, D.

    2013-12-01

    The appearance of automotive skin panels creates desirability for a product and differentiates it from the competition. Because of the importance of skin panels, considerable care is taken in minimizing defects such as the 'hollow' defect that occur around door-handle depressions. However, the inspection process is manual, subjective and time-consuming. This paper describes the development of an objective and inspection scheme for the 'hollow' defect. In this inspection process, the geometry of a panel is captured using a structured lighting system. The geometry data is subsequently analyzed by a purpose-built wavelet-based algorithm to identify the location of any defects that may be present and to estimate the perceived severity of the defects without user intervention. This paper describes and critically evaluates the behavior of this physically-based algorithm on an ideal and real geometry and compares its result to an actual audit. The results show that the algorithm is capable of objectively locating and classifying 'hollow' defects in actual panels.

  19. Radiographic defect depth and width for prognosis and description of periodontal healing of infrabony defects.

    PubMed

    Klein, F; Kim, T S; Hassfeld, S; Staehle, H J; Reitmeir, P; Holle, R; Eickholz, P

    2001-12-01

    The aims of the present study were to evaluate 1) defect depth and width as a prognostic factor and 2) change in defect width as a describing parameter of periodontal healing in infrabony defects treated by regenerative therapy after 6 and 24 months. In 24 patients with advanced periodontitis, 39 infrabony defects were treated by guided tissue regeneration (GTR) using expanded polytetrafluoroethylene (ePTFE) (n = 7) or bioabsorbable barriers (n = 32). Clinical parameters were assessed and 39 standardized radiographs (in triplicate) were taken before and 6 and 24 months after surgery. Using a computer-assisted analysis, the depth, width, and angle of the bony defects were measured. Statistically significant vertical clinical attachment gains (CAL-V: 3.15 +/- 1.63 mm to 3.31 +/- 1.65 mm; P<0.001) and bony fill (1.30 +/- 2.53 mm; P<0.01 to 1.54 +/- 2.70 mm; P<0.005) were observed 6 and 24 months postsurgically. In a multilevel regression analysis CAL-V gain was predicted by baseline CAL-V (P <0.0001), actual smoking (P <0.05), and age (P <0.1). Bony fill could be predicted by baseline height of the infrabony component (P<0.0001), gingival index at baseline (P<0.05), and actual smoking (P <0.01). In narrow (<26 degrees) and deep (> or = 3 mm) infrabony defects bony fill was more pronounced than in wide and shallow defects (P <0.05). Improvement achieved by guided tissue regeneration in infrabony defects can be maintained up to 24 months after surgery. Narrow and deep infrabony defects respond radiographically and to some extent clinically more favorably to GTR therapy than wide and shallow defects. However, depth of the infrabony component was a stronger prognostic parameter than defect angle. Actual smoking impairs the results of GTR therapy in infrabony defects.

  20. Multiscale simulations of defect dipole-enhanced electromechanical coupling at dilute defect concentrations

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Cohen, R. E.

    2017-08-01

    The role of defects in solids of mixed ionic-covalent bonds such as ferroelectric oxides is complex. Current understanding of defects on ferroelectric properties at the single-defect level remains mostly at the empirical level, and the detailed atomistic mechanisms for many defect-mediated polarization-switching processes have not been convincingly revealed quantum mechanically. We simulate the polarization-electric field (P-E) and strain-electric field (ɛ-E) hysteresis loops for BaTiO3 in the presence of generic defect dipoles with large-scale molecular dynamics and provide a detailed atomistic picture of the defect dipole-enhanced electromechanical coupling. We develop a general first-principles-based atomistic model, enabling a quantitative understanding of the relationship between macroscopic ferroelectric properties and dipolar impurities of different orientations, concentrations, and dipole moments. We find that the collective orientation of dipolar defects relative to the external field is the key microscopic structure feature that strongly affects materials hardening/softening and electromechanical coupling. We show that a small concentration (≈0.1 at. %) of defect dipoles dramatically improves electromechanical responses. This offers the opportunity to improve the performance of inexpensive polycrystalline ferroelectric ceramics through defect dipole engineering for a range of applications including piezoelectric sensors, actuators, and transducers.

  1. Comparison of defects identified through Minnesota's Birth Defects Information System And Vital Records, 2006-2008.

    PubMed

    Banerjee, Emily; Zabel, Erik; Alexander, Bruce

    2012-01-01

    The purpose of this study was to examine the differences in birth defects identified through passive and active surveillance systems in Hennepin and Ramsey counties in Minnesota, 2006-2008. This was done by comparing birth defects identified on birth certificates through the Minnesota Department of Health's Office of the State Registrar's Birth and Death Registry (vital records) with those identified by the Minnesota Department of Health's Birth Defects Information System (BDIS), an active birth defects surveillance system. The study population included 73,059 babies born to residents of Hennepin and Ramsey counties. There were 1,882 babies that either vital records and/or BDIS identified as having 1 or more birth defects. Cases identified by BDIS were then linked with matching birth certificates found in the vital records database. Using BDIS as the gold standard, it was observed that the vital records database had an overall underreporting rate of 89% when all broad groups of defects were compared, and 72% when 11 specific defects tracked by both registries were compared. The sensitivity and positive predictive values of vital records to identify cases were also compared using BDIS as the gold standard, and demonstrated low sensitivities for most of the 11 comparable defects (range: 0% for tracheoesophageal fistula to 80% for anencephalus). These observations indicate that BDIS has significantly improved the quality of birth defects surveillance in Minnesota.

  2. Entanglement entropy in integrable field theories with line defects. Part I. Topological defect

    NASA Astrophysics Data System (ADS)

    Jiang, Yunfeng

    2017-07-01

    In this paper and a companion one [1], we study the effect of integrable line defects on entanglement entropy in massive integrable field theories in 1+1 dimensions. The current paper focuses on topological defects that are purely transmissive. Using the form factor bootstrap method, we show that topological defects do not affect the the entanglement entropy in the UV limit and modify slightly the leading exponential correction in the IR. This conclusion holds for both unitary and non-unitary field theories. In contrast, non-topological defects affect the entanglement entropy more significantly both in UV and IR limit and will be studied in the companion paper.

  3. Automated defect review of the wafer bevel with a defect review scanning electron microscope

    NASA Astrophysics Data System (ADS)

    McGarvey, Steve; Kanezawa, Masakazu

    2009-03-01

    One of the few remaining bastions of non-regulated Integrated Circuit defectivity is the wafer bevel. Recent internal Integrated Circuit Manufacturing studies have suggested that the edge bevel may be responsible for as much as a two to three percent yield loss during a defect excursion on the manufacturing line and a one to two percent yield loss during ongoing wafer manufacturing. A new generation of defect inspection equipment has been introduced to the Research and Development, Integrated Circuit, MEM's and Si wafer manufacturing markets that has imparted the ability for the end equipment user to detect defects located on the bevel of the wafer. The inherent weakness of the current batch of wafer bevel inspection equipment is the lack of automatic discrete defect classification data into multiple, significant classification bins and the lack of discrete elemental analysis data. Root cause analysis is based on minimal discrete defect analysis as a surrogate for a statistically valid sampling of defects from the bevel. This paper provides a study of the methods employed with a Hitachi RS-5500EQEQ Defect Review Scanning Electron Microscope (DRSEM) to automatically capture high resolution/high magnification images and collect elemental analysis on a statistically valid sample of the discrete defects that were located by a bevel inspection system.

  4. Multiscale crystal defect dynamics: A coarse-grained lattice defect model based on crystal microstructure

    NASA Astrophysics Data System (ADS)

    Lyu, Dandan; Li, Shaofan

    2017-10-01

    Crystal defects have microstructure, and this microstructure should be related to the microstructure of the original crystal. Hence each type of crystals may have similar defects due to the same failure mechanism originated from the same microstructure, if they are under the same loading conditions. In this work, we propose a multiscale crystal defect dynamics (MCDD) model that models defects by considering its intrinsic microstructure derived from the microstructure or material genome of the original perfect crystal. The main novelties of present work are: (1) the discrete exterior calculus and algebraic topology theory are used to construct a scale-up (coarse-grained) dual lattice model for crystal defects, which may represent all possible defect modes inside a crystal; (2) a higher order Cauchy-Born rule (up to the fourth order) is adopted to construct atomistic-informed constitutive relations for various defect process zones, and (3) an hierarchical strain gradient theory based finite element formulation is developed to support an hierarchical multiscale cohesive (process) zone model for various defects in a unified formulation. The efficiency of MCDD computational algorithm allows us to simulate dynamic defect evolution at large scale while taking into account atomistic interaction. The MCDD model has been validated by comparing of the results of MCDD simulations with that of molecular dynamics (MD) in the cases of nanoindentation and uniaxial tension. Numerical simulations have shown that MCDD model can predict dislocation nucleation induced instability and inelastic deformation, and thus it may provide an alternative solution to study crystal plasticity.

  5. Automated Heuristic Defect Classification (AHDC) for haze-induced defect growth management and mask requalification

    NASA Astrophysics Data System (ADS)

    Munir, Saghir; Qidwai, Gul

    2012-03-01

    This article presents results from a heuristic automated defect classification algorithm for reticle inspection that mimics the classification rules. AHDC does not require CAD data, thus it can be rapidly deployed in a high volume production environment without the need for extensive design data management. To ensure classification consistency a software framework tracks every defect in repeated inspections. Through its various image based derived metrics it is shown that such a system manages and tracks repeated defects in applications such as haze induced defect growth.

  6. Nonequilibrium occupancy of tail states and defects in a-Si:H: Implications for defect structure

    NASA Astrophysics Data System (ADS)

    Schumm, G.; Jackson, W. B.; Street, R. A.

    1993-11-01

    A detailed investigation of the electron and hole occupancy of tail states in undoped amorphous silicon (a-Si:H) as well as changes in the dangling-bond occupancy as a function of excitation intensity was carried out using light-induced electron-spin-resonance (LESR) measurements. For very thick films the band-tail electron and hole densities are not proportional. Over a wide range of excitation conditions the excess hole density is constant, suggesting the presence of charged defects with a density that is 5-10 times larger than the neutral defect density in annealed or as-grown a-Si:H. Light soaking increases mainly the neutral defect density. The dependence of the excess hole density on film thickness and absorption profiles indicates that this effect is a bulk property, which may be masked in thinner films by the comparatively high interface defect density. Model calculations of nonequilibrium occupation statistics confirm the experimental results. For a defect distribution that includes charged defects, the calculations suggest a very small positive LESR signature of the dangling bond, in spite of the high density of charged defects in the material, as a necessary consequence of the asymmetries observed between electron and hole capture rates and tail-state distributions. The calculations demonstrate that the lack of this signature does not imply a defect structure that contains predominantly neutral defects.

  7. USE OF BIOCERAMICS IN FILLING BONE DEFECTS

    PubMed Central

    Garrido, Carlos Antõnio; Sampaio, Tania Clarete Fonseca Vieira Sales

    2015-01-01

    Objective: To present the results from using biological ceramics for filling bone defects resulting from post-traumatic or orthopedic injuries. Methods: Thirty-six patients with bone defects caused by trauma or orthopedic injury were evaluated. Nineteen patients were male (52.8%) and 17 were female (47.2%). Their ages ranged from 19 to 84 years, with a mean of 45.7 years and median of 37 years. Only patients with defects that required at least five grams of biological ceramic were included. Eighteen cases were classified as orthopedic: bone defects were observed in 11 cases of total hip arthroplasty; one case of primary total hip arthroplasty, due to coxarthrosis; five cases of femoral or tibial open wedge osteotomy; and one case of tarsal arthrodesis. There were 18 cases of trauma-related defects; uninfected pseudarthrosis, eight cases; recent fractures of the tibial plateau with compression of the spongy bone, three cases; and exposed fractures treated with external fixators, seven cases. The surgical technique consisted of curetting and debriding the injury until bone suitable for grafting was found. Biological ceramic was then used to fill the defect and some kind of fixation was applied. Results: Among the 36 patients evaluated, it was seen that 35 (97.2%) presented integration of the biological ceramic, while one case of open fracture treated with external fixation had poor integration of the biological ceramic. Conclusion: Treatment of bone defects of orthopedic or post-traumatic etiology using a phosphocalcium ceramic composed of hydroxyapatite was shown to be a practical, effective and safe method. PMID:27022576

  8. Point-defect-mediated dehydrogenation of alane

    NASA Astrophysics Data System (ADS)

    Ismer, Lars

    2011-03-01

    For the engineering of better hydrogen storage materials a systematic understanding of their hydrogen sorption kinetics is crucial. Theoretical studies on metal hydrides have indicated that in many cases point defects control mass transport and hence hydrogen uptake and release. Manipulating point-defect concentrations thus allows control over hydrogen sorption kinetics, opening up new engineering strategies. However, in some cases the relevance of kinetic limitations due to point defects is still under debate; kinetic inhibition of hydrogen sorption has also been attributed to surface effects, e.g. oxide layers or low recombination rates. We present a systematic analysis of the dehydrogenation kinetics of alane (AlH3), one of the prime candidate materials for hydrogen storage. Using hybrid-density functional calculations we determine the concentrations and mobilities of point defects and their complexes. Kinetic Monte Carlo simulations are used to describe the full dehydrogenation reaction. We show that under dehydrogenation conditions charged hydrogen vacancy defects form in the crystal, which have a strong tendency towards clustering. The vacancy clusters denote local nuclei of Al phase, and the growth of these nuclei eventually drives the AlH3/Al transformation. However, the low concentration of vacancy defects limits the transport of hydrogen across the bulk, and hence acts as the rate-limiting part of the process. The dehydrogenation is therefore essentially inactive at room temperature, explaining why AlH3 is metastable for years, even though it is thermodynamically unstable. Our derived activation energy and dehydrogenation curves are in excellent agreement with the experimental data, providing evidence for the relevance of bulk point-defect kinetics. Work performed in collaboration with A. Janotti and C. G. Van de Walle, and supported by DOE.

  9. [Prenatal diagnosis of abdominal wall defects].

    PubMed

    El Mhabrech, H; Ben Hmida, H; Charfi, H; Zrig, A; Hafsa, C

    2017-09-07

    Anterior abdominal wall defects (AAWD) correspond to a wide spectrum of congenital defects affecting 6.3/10,000 pregnancies. They have in common a closure defect of the anterior abdominal wall and can be fatal or expose the fetus and the neonate (NN) to many complications. This study was based on a retrospective study of 22 cases of AAWD collected between May 2009 and December 2014. Its purpose was to specify the importance of prenatal ultrasonography in the diagnosis and prognosis assessment of these defects. These 22 AAWDs consisted in 13 cases of omphalocele (including four cases of Beckwith-Wiedemann syndrome), four of gastroschisis, one of pentalogy of Cantrell, three of vesical exstrophy and one of cloacal exstrophy. Prenatal ultrasonography provided the diagnosis of 14 of these defects with a changing sensitivity with the gestational age varying from 17% in the first trimester to 71.4% and 77.8% in the second and third trimesters, respectively. The relevance of this examination was improved when performed by an imaging specialist. The prenatal diagnosis of these defects indicated an amniocentesis in eight cases, allowing the diagnosis of two cases of trisomy 18. It also motivated a therapeutic termination of the pregnancy (TTP) in ten cases. Prenatal ultrasonography allowed better prenatal follow-up and planning of the delivery of the continued pregnancies. It indicated an emergency C-section in only one case by showing intestinal complications of gastroschisis. Four NNs died (two cases of omphalocele and two of gastroschisis), three of which postoperatively and the prenatal diagnosis did not improve survival. Prenatal ultrasonographic diagnosis provided a precise morphological study determining the type of the AAWD, a complete malformation assessment, and the prognosis factors. This resulted in adequate multidisciplinary pre and postnatal care, including a rigorous ultrasound follow-up, a TTP in case of associated defects, and emergency delivery once the

  10. Two-dimensional defect modes in optically induced photonic lattices

    SciTech Connect

    Wang Jiandong; Yang Jianke; Chen Zhigang

    2007-07-15

    In this article, localized linear defect modes due to band gap guidance in two-dimensional photonic lattices with localized or nonlocalized defects are investigated theoretically. First, when the defect is localized and weak, eigenvalues of defect modes bifurcated from edges of Bloch bands are derived analytically. It is shown that in an attractive (repulsive) defect, defect modes bifurcate out from Bloch-band edges with normal (anomalous) diffraction coefficients. Furthermore, distances between defect-mode eigenvalues and Bloch-band edges decrease exponentially with the defect strength, which is very different from the one-dimensional case where such distances decrease quadratically with the defect strength. It is also found that some defect-mode branches bifurcate not from Bloch-band edges, but from quasiedge points within Bloch bands, which is very unusual. Second, when the defect is localized but strong, defect modes are determined numerically. It is shown that both the repulsive and attractive defects can support various types of defect modes such as fundamental, dipole, quadrupole, and vortex modes. These modes reside in various band gaps of the photonic lattice. As the defect strength increases, defect modes move from lower band gaps to higher ones when the defect is repulsive, but remain within each band gap when the defect is attractive, similar to the one-dimensional case. The same phenomena are observed when the defect is held fixed while the applied dc field (which controls the lattice potential) increases. Lastly, if the defect is nonlocalized (i.e., it persists at large distances in the lattice), it is shown that defect modes can be embedded inside the continuous spectrum, and they can bifurcate out from edges of the continuous spectrum algebraically rather than exponentially.

  11. Hardwood log defect photographic database, software and user's guide

    Treesearch

    R. Edward Thomas

    2009-01-01

    Computer software and user's guide for Hardwood Log Defect Photographic Database. The database contains photographs and information on external hardwood log defects and the corresponding internal characteristics. This database allows users to search for specific defect types, sizes, and locations by tree species. For every defect, the database contains photos of...

  12. Decision making in reconstruction of defects of the eyelid.

    PubMed

    Ferguson, Noor M; Mathijssen, Irene M J; Hofer, Stefan O P; Mureau, Marc A M

    2011-02-01

    We present three patients with major defects of the eyelid who subsequently had them reconstructed. They included a defect of the lateral upper lid, a defect of the medial upper and lower lids, and a defect of the medial lower lid, cheek, and nose.

  13. Efficient Co-Replication of Defective Novirhabdovirus

    PubMed Central

    Rouxel, Ronan N.; Mérour, Emilie; Biacchesi, Stéphane; Brémont, Michel

    2016-01-01

    We have generated defective Viral Hemorrhagic Septicemia Viruses (VHSV) which express either the green fluorescent protein (GFP) or a far-red fluorescent protein (mKate) by replacing the genes encoding the nucleoprotein N or the polymerase-associated P protein. To recover viable defective viruses, rVHSV-ΔN-Red and rVHSV-ΔP-Green, fish cells were co-transfected with both deleted cDNA VHSV genomes, together with plasmids expressing N, P and L of the RNA-dependent RNA polymerase. After one passage of the transfected cell supernatant, red and green cell foci were observed. Viral titer reached 107 PFU/mL after three passages. Infected cells were always red and green with the very rare event of single red or green cell foci appearing. To clarify our understanding of how such defective viruses could be so efficiently propagated, we investigated whether (i) a recombination event between both defective genomes had occurred, (ii) whether both genomes were co-encapsidated in a single viral particle, and (iii) whether both defective viruses were always replicated together through a complementation phenomenon or even as conglomerate. To address these hypotheses, genome and viral particles have been fully characterized and, thus, allowing us to conclude that rVHSV-ΔN-Red and rVHSV-ΔP-Green are independent viral particles which could propagate only by simultaneously infecting the same cells. PMID:26959049

  14. High purith low defect FZ silicon

    NASA Technical Reports Server (NTRS)

    Kimura, H.; Robertson, G.

    1985-01-01

    The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

  15. Coating defect evaluation based on stimulated thermography

    NASA Astrophysics Data System (ADS)

    Palumbo, Davide; Tamborrino, Rosanna; Galietti, Umberto

    2017-05-01

    Thermal Barrier Coatings are used to protect the materials from severe temperature and chemical environments. In particular, these materials are used in the engineering fields where high temperatures, corrosive environments and high mechanical stress are required. Defects present between substrate material and coating, as detachments may cause the break of coating and the consequent possibility to exposure the substrate material to the environment conditions. The capability to detect the defect zones with non-destructive techniques could allow the maintenance of coated components with great advantages in terms of costs and prediction of fatigue life. In this work, two different heat sources and two different thermographic techniques have been used to detect the adhesion defects among the base material and the coating. Moreover, an empirical thermographic method has been developed to evaluate the thickness of the thermal coating and to discriminate between an unevenness of the thickness and a defect zone. The study has been conducted on circular steel specimens with simulated adhesion defect and on specimens prepared with different thicknesses of thermal barrier coating.

  16. Ultrasonic NDE Simulation for Composite Manufacturing Defects

    NASA Technical Reports Server (NTRS)

    Leckey, Cara A. C.; Juarez, Peter D.

    2016-01-01

    The increased use of composites in aerospace components is expected to continue into the future. The large scale use of composites in aerospace necessitates the development of composite-appropriate nondestructive evaluation (NDE) methods to quantitatively characterize defects in as-manufactured parts and damage incurred during or post manufacturing. Ultrasonic techniques are one of the most common approaches for defect/damage detection in composite materials. One key technical challenge area included in NASA's Advanced Composite's Project is to develop optimized rapid inspection methods for composite materials. Common manufacturing defects in carbon fiber reinforced polymer (CFRP) composites include fiber waviness (in-plane and out-of-plane), porosity, and disbonds; among others. This paper is an overview of ongoing work to develop ultrasonic wavefield based methods for characterizing manufacturing waviness defects. The paper describes the development and implementation of a custom ultrasound simulation tool that is used to model ultrasonic wave interaction with in-plane fiber waviness (also known as marcelling). Wavefield data processing methods are applied to the simulation data to explore possible routes for quantitative defect characterization.

  17. Congenital defects of the pericardium: a review.

    PubMed

    Shah, Ankit B; Kronzon, Itzhak

    2015-08-01

    Pericardial defects are a rare disorder that can be characterized as acquired or congenital. Congenital defects can be further characterized by location and size of the defect, e.g. left- or right-sided and partial or complete absence of the pericardium. While physical examination and electrocardiogram are not diagnostic, chest radiographs and echocardiography have findings that should alert the clinician to the absence of the pericardium as a possible diagnosis. Despite its limitations with visualizing the normal pericardium in areas of minimal adipose, cardiac magnetic resonance is currently the gold standard for diagnosing the congenital absence of the pericardium. Patients have a similar life expectancy to those without pericardial defects; however in certain cases, herniation and strangulation of cardiac chambers can be life threatening and lead to sudden cardiac death. Treatment is tailored to the patient's symptoms, presentation, and the size and location of the defect. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2015. For permissions please email: journals.permissions@oup.com.

  18. Imprinting defects on human chromosome 15.

    PubMed

    Horsthemke, B; Buiting, K

    2006-01-01

    The Prader-Willi syndrome (PWS) and Angelman syndrome (AS) are two distinct neurogenetic diseases that are caused by the loss of function of imprinted genes on the proximal long arm of human chromosome 15. In a few percent of patients with PWS and AS, the disease is due to aberrant imprinting and gene silencing. In patients with PWS and an imprinting defect, the paternal chromosome carries a maternal imprint. In patients with AS and an imprinting defect, the maternal chromosome carries a paternal imprint. Imprinting defects offer a unique opportunity to identify some of the factors and mechanisms involved in imprint erasure, resetting and maintenance. In approximately 10% of cases the imprinting defects are caused by a microdeletion affecting the 5' end of the SNURF-SNRPN locus. These deletions define the 15q imprinting center (IC), which regulates imprinting in the whole domain. These findings have been confirmed and extended in knock-out and transgenic mice. In the majority of patients with an imprinting defect, the incorrect imprint has arisen without a DNA sequence change, possibly as the result of stochastic errors of the imprinting process or the effect of exogenous factors.

  19. Developmental defects of enamel in phenylketonuria patients.

    PubMed

    de Marco Salvadori, Carina; Pereira, Rosana Marques; Raichert, Caroline; de Morais Ferreira, Fernanda; de Menezes, José Vitor Nogara Borges

    2014-01-01

    The purpose of this study was to determine the prevalence of developmental defects of enamel in patients diagnosed with phenylketonuria (PKU). The study group consisted of 24 four- to 24-year-old subjects with PKU. The control group consisted of 24 healthy individuals. An examination for the detection of developmental defects of enamel was conducted at the university pediatric dentistry clinic by a single examiner. Data were analyzed using the chi-square test (P<.05) and odds ratios. The prevalence of developmental defects of enamel was 36 percent in the study group and 15 percent in the control group. The maxillary central incisors were the most affected teeth in patients with PKU, while the maxillary and mandibular first molars were the most affected teeth in the control group. Patients with PKU had a 3.3-fold greater chance of exhibiting developmental defects of enamel versus the healthy controls, which was statistically significant (P<.001). The study findings suggest that PKU increases the risk of developmental defects of enamel.

  20. Structure Defect Property Relationships in Binary Intermetallics

    NASA Astrophysics Data System (ADS)

    Medasani, Bharat; Ding, Hong; Chen, Wei; Persson, Kristin; Canning, Andrew; Haranczyk, Maciej; Asta, Mark

    2015-03-01

    Ordered intermetallics are light weight materials with technologically useful high temperature properties such as creep resistance. Knowledge of constitutional and thermal defects is required to understand these properties. Vacancies and antisites are the dominant defects in the intermetallics and their concentrations and formation enthalpies could be computed by using first principles density functional theory and thermodynamic formalisms such as dilute solution method. Previously many properties of the intermetallics such as melting temperatures and formation enthalpies were statistically analyzed for large number of intermetallics using structure maps and data mining approaches. We undertook a similar exercise to establish the dependence of the defect properties in binary intermetallics on the underlying structural and chemical composition. For more than 200 binary intermetallics comprising of AB, AB2 and AB3 structures, we computed the concentrations and formation enthalpies of vacancies and antisites in a small range of stoichiometries deviating from ideal stoichiometry. The calculated defect properties were datamined to gain predictive capabilities of defect properties as well as to classify the intermetallics for their suitability in high-T applications. Supported by the US DOE under Contract No. DEAC02-05CH11231 under the Materials Project Center grant (Award No. EDCBEE).