Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE PAGES

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; ...

2017-06-26

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

A graphene based frequency quadrupler

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-04-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices.

A graphene based frequency quadrupler

PubMed Central

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-01-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices. PMID:28418013

25 CFR 547.2 - What are the definitions for this part?

Code of Federal Regulations, 2013 CFR

2013-04-01

.... Electromagnetic interference. The disruption of operation of an electronic device when it is in the vicinity of an electromagnetic field in the radio frequency spectrum that is caused by another electronic device. Electrostatic...

25 CFR 547.2 - What are the definitions for this part?

Code of Federal Regulations, 2014 CFR

2014-04-01

.... Electromagnetic interference. The disruption of operation of an electronic device when it is in the vicinity of an electromagnetic field in the radio frequency spectrum that is caused by another electronic device. Electrostatic...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Remote detection of electronic devices

DOEpatents

Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

2012-09-25

An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations

NASA Astrophysics Data System (ADS)

Soligo, Riccardo

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Ultra-high-frequency chaos in a time-delay electronic device with band-limited feedback.

PubMed

Illing, Lucas; Gauthier, Daniel J

2006-09-01

We report an experimental study of ultra-high-frequency chaotic dynamics generated in a delay-dynamical electronic device. It consists of a transistor-based nonlinearity, commercially-available amplifiers, and a transmission-line for feedback. The feedback is band-limited, allowing tuning of the characteristic time-scales of both the periodic and high-dimensional chaotic oscillations that can be generated with the device. As an example, periodic oscillations ranging from 48 to 913 MHz are demonstrated. We develop a model and use it to compare the experimentally observed Hopf bifurcation of the steady-state to existing theory [Illing and Gauthier, Physica D 210, 180 (2005)]. We find good quantitative agreement of the predicted and the measured bifurcation threshold, bifurcation type and oscillation frequency. Numerical integration of the model yields quasiperiodic and high dimensional chaotic solutions (Lyapunov dimension approximately 13), which match qualitatively the observed device dynamics.

Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies

NASA Astrophysics Data System (ADS)

Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

2018-01-01

III-V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III-V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

PubMed

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-10-08

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

PubMed Central

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-01-01

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

Comprehensive photonics-electronics convergent simulation and its application to high-speed electronic circuit integration on a Si/Ge photonic chip

NASA Astrophysics Data System (ADS)

Takeda, Kotaro; Honda, Kentaro; Takeya, Tsutomu; Okazaki, Kota; Hiraki, Tatsurou; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Fukuda, Hiroshi; Usui, Mitsuo; Nosaka, Hideyuki; Yamamoto, Tsuyoshi; Yamada, Koji

2015-01-01

We developed a design technique for a photonics-electronics convergence system by using an equivalent circuit of optical devices in an electrical circuit simulator. We used the transfer matrix method to calculate the response of an optical device. This method used physical parameters and dimensions of optical devices as calculation parameters to design a device in the electrical circuit simulator. It also used an intermediate frequency to express the wavelength dependence of optical devices. By using both techniques, we simulated bit error rates and eye diagrams of optical and electrical integrated circuits and calculated influences of device structure change and wavelength shift penalty.

500(deg)C electronics for harsh environments

NASA Technical Reports Server (NTRS)

Sadwick, Laurence P.; Hwu, R. Jennifer; Chern, J. H. Howard; Lin, Ching-Hsu; Castillo, Linda Del; Johnson, Travis

2005-01-01

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

Authentication of Radio Frequency Identification Devices Using Electronic Characteristics

ERIC Educational Resources Information Center

Chinnappa Gounder Periaswamy, Senthilkumar

2010-01-01

Radio frequency identification (RFID) tags are low-cost devices that are used to uniquely identify the objects to which they are attached. Due to the low cost and size that is driving the technology, a tag has limited computational capabilities and resources. This limitation makes the implementation of conventional security protocols to prevent…

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Detection of low frequency external electronic identification devices using commercial panel readers.

PubMed

Stewart, S C; Rapnicki, P; Lewis, J R; Perala, M

2007-09-01

The ability of a commercially available panel reader system to read International Standards Organization-compliant electronic identification devices under commercial dairy conditions was examined. Full duplex (FDX-B) and half-duplex (HDX) low frequency radio-frequency identification external ear tags were utilized. The study involved 498 Holstein cows in the final 6 wk of gestation. There were 516 total electronic identification devices (n = 334 HDX and n = 182 FDX-B). Eighteen FDX-B were replaced with HDX during the study due to repeated detection failure. There were 6,679 HDX and 3,401 FDX-B device detection attempts. There were 220 (2.2%) unsuccessful and 9,860 (97.8%) successful identification detection attempts. There were 9 unsuccessful detection attempts for HDX (6,670/6,679 = 99.9% successful detection attempts) and 211 unsuccessful detection attempts for FDX-B (3,190/3,401 = 93.8% successful detection attempts). These results demonstrate that this panel system can achieve high detection rates of HDX devices and meet the needs of the most demanding management applications. The FDX-B detection rate was not sufficient for the most demanding applications, requiring a high degree of detection by panel readers. The lower FDX-B rate may not be inherent in the device technology itself, but could be due to other factors, including the particular panel reader utilized or the tuning of the panel reader.

Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

NASA Technical Reports Server (NTRS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

2008-01-01

Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Electronic Device of Didactic and Electrometric Interest for the Study of RLC Circuits.

ERIC Educational Resources Information Center

Rodriguez, Angel L. Perez; And Others

1979-01-01

Presents a method of studying RLC circuits with the help of the oscilloscope in the XYZ mode, complemented by an electronic device which generates a marker-trace on the screen and which is used to measure frequencies without the need of a reference point on the screen. (Author/GA)

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Electron capture dissociation in a branched radio-frequency ion trap.

PubMed

Baba, Takashi; Campbell, J Larry; Le Blanc, J C Yves; Hager, James W; Thomson, Bruce A

2015-01-06

We have developed a high-throughput electron capture dissociation (ECD) device coupled to a quadrupole time-of-flight mass spectrometer using novel branched radio frequency ion trap architecture. With this device, a low-energy electron beam can be injected orthogonally into the analytical ion beam with independent control of both the ion and electron beams. While ions and electrons can interact in a "flow-through" mode, we observed a large enhancement in ECD efficiency by introducing a short ion trapping period at the region of ion and electron beam intersection. This simultaneous trapping mode still provides up to five ECD spectra per second while operating in an information-dependent acquisition workflow. Coupled to liquid chromatography (LC), this LC-ECD workflow provides good sequence coverage for both trypsin and Lys C digests of bovine serum albumin, providing ECD spectra for doubly charged precursor ions with very good efficiency.

Electronically controlled spoof localized surface plasmons on the corrugated ring with a shorting pin

NASA Astrophysics Data System (ADS)

Zhang, Chao; Zhou, Yong Jin

2018-07-01

We have demonstrated that spoof localized surface plasmons (LSPs) can be controlled by loading a shorting pin into the corrugated ring resonator in the microwave and terahertz (THz) frequencies. Electronical switchability and tunability of spoof LSPs have been achieved by mounting Schottky barrier diodes and varactor diodes across the slit around the shorting pin in the ground plane. An electronically tunable band-pass filter has been demostrated in the microwave frequencies. Such electronically controlled spoof LSPs devices can find more applications for highly integrated plasmonic circuits in microwave and THz frequencies.

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Romanofsky, R. R.; Ponchak, G. E.; Liu, D. C.

1984-01-01

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

Development of a Branched Radio-Frequency Ion Trap for Electron Based Dissociation and Related Applications

PubMed Central

Baba, Takashi; Campbell, J. Larry; Le Blanc, J. C. Yves; Baker, Paul R. S.; Hager, James W.; Thomson, Bruce A.

2017-01-01

Collision-induced dissociation (CID) is the most common tool for molecular analysis in mass spectrometry to date. However, there are difficulties associated with many applications because CID does not provide sufficient information to permit details of the molecular structures to be elucidated, including post-translational-modifications in proteomics, as well as isomer differentiation in metabolomics and lipidomics. To face these challenges, we are developing fast electron-based dissociation devices using a novel radio-frequency ion trap (i.e., a branched ion trap). These devices have the ability to perform electron capture dissociation (ECD) on multiply protonated peptide/proteins; in addition, the electron impact excitation of ions from organics (EIEIO) can be also performed on singly charged molecules using such a device. In this article, we review the development of this technology, in particular on how reaction speed for EIEIO analyses on singly charged ions can be improved. We also overview some unique, recently reported applications in both lipidomics and glycoproteomics. PMID:28630811

Development of a Branched Radio-Frequency Ion Trap for Electron Based Dissociation and Related Applications.

PubMed

Baba, Takashi; Campbell, J Larry; Le Blanc, J C Yves; Baker, Paul R S; Hager, James W; Thomson, Bruce A

2017-01-01

Collision-induced dissociation (CID) is the most common tool for molecular analysis in mass spectrometry to date. However, there are difficulties associated with many applications because CID does not provide sufficient information to permit details of the molecular structures to be elucidated, including post-translational-modifications in proteomics, as well as isomer differentiation in metabolomics and lipidomics. To face these challenges, we are developing fast electron-based dissociation devices using a novel radio-frequency ion trap ( i.e. , a branched ion trap). These devices have the ability to perform electron capture dissociation (ECD) on multiply protonated peptide/proteins; in addition, the electron impact excitation of ions from organics (EIEIO) can be also performed on singly charged molecules using such a device. In this article, we review the development of this technology, in particular on how reaction speed for EIEIO analyses on singly charged ions can be improved. We also overview some unique, recently reported applications in both lipidomics and glycoproteomics.

Wideband energy harvesting for piezoelectric devices with linear resonant behavior.

PubMed

Luo, Cheng; Hofmann, Heath F

2011-07-01

In this paper, an active energy harvesting technique for a spring-mass-damper mechanical resonator with piezoelectric electromechanical coupling is investigated. This technique applies a square-wave voltage to the terminals of the device at the same frequency as the mechanical excitation. By controlling the magnitude and phase angle of this voltage, an effective impedance matching can be achieved which maximizes the amount of power extracted from the device. Theoretically, the harvested power can be the maximum possible value, even at off-resonance frequencies. However, in actual implementation, the efficiency of the power electronic circuit limits the amount of power harvested. A power electronic full-bridge converter is built to implement the technique. Experimental results show that the active technique can increase the effective bandwidth by a factor of more than 2, and harvests significantly higher power than rectifier-based circuits at off-resonance frequencies.

Improved Electromechanical Infrared Sensor

NASA Technical Reports Server (NTRS)

Kenny, Thomas W.; Kaiser, William J.

1994-01-01

Proposed electromechanical infrared detector improved version of device described in "Micromachined Electron-Tunneling Infrared Detectors" (NPO-18413). Fabrication easier, and undesired sensitivity to acceleration reduced. In devices, diaphragms and other components made of micromachined silicon, and displacements of diaphragms measured by electron tunneling displacement transducer {see "Micromachined Tunneling Accelerometer" (NPO-18513)}. Improved version offers enhanced frequency response and less spurious response to acceleration.

An Electromagnetic Spectrum for Millennial Students: Teaching Light, Color, Energy, and Frequency Using the Electronic Devices of Our Time

ERIC Educational Resources Information Center

Murphy, Maureen Kendrick

2010-01-01

In this article, a comparison of student learning outcomes is made in sophomore-level physical science classes using a "traditional" pedagogical approach versus a "modern" approach. Specifically, when students were taught the electromagnetic spectrum using diagrams and examples that incorporate technological advances and electronic devices of our…

Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Villis, B. J.; Sanquer, M.; Jehl, X.

2014-06-09

The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are ablemore » to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability.« less

Re-Active Passive devices for control of noise transmission through a panel

NASA Astrophysics Data System (ADS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Dan

2008-01-01

Re-Active Passive devices have been developed to control low-frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The Re-Active Passive device uses passive constrained layer damping to cover relatively high-frequency range (>150 Hz), reactive distributed vibration absorber to cover the medium-frequency range (50-200 Hz), and active control for controlling low frequencies (<150 Hz). The actuator was applied to control noise transmission through a panel mounted in the Transmission Loss Test Facility at Virginia Tech. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three Re-Active Passive devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 g to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Musculoskeletal impact of the use of various types of electronic devices on university students in Hong Kong: An evaluation by means of self-reported questionnaire.

PubMed

Woo, Eugenia H C; White, Peter; Lai, Christopher W K

2016-12-01

Despite the increasingly widespread popularity of electronic devices, there are limited comprehensive studies on the effects of usage and exposure to multiple electronic devices over extended periods of time. Therefore, this study explored the cumulative musculoskeletal implications of exposure to various electronic devices among university students. A self-reported questionnaire was administered in the university in Hong Kong and students provided information about the frequency and duration of electronic devices use, including computers, mobile phones and game consoles, and reported on any musculoskeletal pain or discomfort that may relate to electronic devices usage in the immediate 12 months prior to the survey date. A total of 503 university students (59% males and 41% females) aged 18-25 years completed the questionnaire. The results showed that 251 (49.9%) respondents reported upper limb musculoskeletal symptoms, particularly in the neck and shoulder regions. Among these, 155 (61.8%) indicated that their discomfort was related to electronic device usage. Statistically significant differences in exposure to electronic devices and musculoskeletal outcomes between genders were found (p < 0.05). The use of electronic devices and habitual postures were associated with musculoskeletal problems among university students in Hong Kong. This phenomenon highlights the urgent need for ergonomics education and recommendations to increase students' awareness of musculoskeletal wellbeing. Copyright © 2016 Elsevier Ltd. All rights reserved.

Low-noise and wideband hot-electron superconductive mixer for terahertz frequencies

NASA Astrophysics Data System (ADS)

Karasik, Boris S.; Skalare, Anders; McGrath, William R.; Bumble, Bruce; Leduc, Henry G.; Barner, J. B.; Kleinsasser, Alan W.; Burke, P. J.; Schoelkopf, Robert J.; Prober, Daniel E.

1998-11-01

Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz. The mixer device is a 0.15 - 0.3 micrometer microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be less than or equal to 3000 K at 2.5 THz and the mixer IF bandwidth is expected to be at least 10 GHz for a 0.1 micrometer long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20 - 100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated. The HEB mixer is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa2Cu3O7-(delta ) (YBCO) HEB are discussed. The expected LO power of 1 - 10 (mu) W and SSB noise temperature of approximately equals 2000 K may make this mixer attractive for various remote sensing applications.

High-frequency ultrasonic wire bonding systems

PubMed

Tsujino; Yoshihara; Sano; Ihara

2000-03-01

The vibration characteristics of longitudinal-complex transverse vibration systems with multiple resonance frequencies of 350-980 kHz for ultrasonic wire bonding of IC, LSI or electronic devices were studied. The complex vibration systems can be applied for direct welding of semiconductor tips (face-down bonding, flip-chip bonding) and packaging of electronic devices. A longitudinal-complex transverse vibration bonding system consists of a complex transverse vibration rod, two driving longitudinal transducers 7.0 mm in diameter and a transverse vibration welding tip. The vibration distributions along ceramic and stainless-steel welding tips were measured at up to 980 kHz. A high-frequency vibration system with a height of 20.7 mm and a weight of less than 15 g was obtained.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Noise and Bandwidth Measurements of Diffusion-Cooled Nb Hot-Electron Bolometer Mixers at Frequencies Above the Superconductive Energy Gap

NASA Technical Reports Server (NTRS)

Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bumble, B.; LeDuc, H.

1999-01-01

Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.

Photoconductive circuit element pulse generator

DOEpatents

Rauscher, Christen

1989-01-01

A pulse generator for characterizing semiconductor devices at millimeter wavelength frequencies where a photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test.

Portable Integrated Wireless Device Threat Assessment to Aircraft Radio Systems

NASA Technical Reports Server (NTRS)

Salud, Maria Theresa P.; Williams, Reuben A. (Technical Monitor)

2004-01-01

An assessment was conducted on multiple wireless local area network (WLAN) devices using the three wireless standards for spurious radiated emissions to determine their threat to aircraft radio navigation systems. The measurement process, data and analysis are provided for devices tested using IEEE 802.11a, IEEE 802.11b, and Bluetooth as well as data from portable laptops/tablet PCs and PDAs (grouping known as PEDs). A comparison was made between wireless LAN devices and portable electronic devices. Spurious radiated emissions were investigated in the radio frequency bands for the following aircraft systems: Instrument Landing System Localizer and Glideslope, Very High Frequency (VHF) Communication, VHF Omnidirectional Range, Traffic Collision Avoidance System, Air Traffic Control Radar Beacon System, Microwave Landing System and Global Positioning System. Since several of the contiguous navigation systems were grouped under one encompassing measurement frequency band, there were five measurement frequency bands where spurious radiated emissions data were collected for the PEDs and WLAN devices. The report also provides a comparison between emissions data and regulatory emission limit.

High performance flexible electronics for biomedical devices.

PubMed

Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

2014-01-01

Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

Design and Implementation of RF Energy Harvesting System for Low-Power Electronic Devices

NASA Astrophysics Data System (ADS)

Uzun, Yunus

2016-08-01

Radio frequency (RF) energy harvester systems are a good alternative for energizing of low-power electronics devices. In this work, an RF energy harvester is presented to obtain energy from Global System for Mobile Communications (GSM) 900 MHz signals. The energy harvester, consisting of a two-stage Dickson voltage multiplier circuit and L-type impedance matching circuits, was designed, simulated, fabricated and tested experimentally in terms of its performance. Simulation and experimental works were carried out for various input power levels, load resistances and input frequencies. Both simulation and experimental works have been carried out for this frequency band. An efficiency of 45% is obtained from the system at 0 dBm input power level using the impedance matching circuit. This corresponds to the power of 450 μW and this value is sufficient for many low-power devices. The most important parameters affecting the efficiency of the RF energy harvester are the input power level, frequency band, impedance matching and voltage multiplier circuits, load resistance and the selection of diodes. RF energy harvester designs should be optimized in terms of these parameters.

Determining mode excitations of vacuum electronics devices via three-dimensional simulations using the SOS code

NASA Technical Reports Server (NTRS)

Warren, Gary

1988-01-01

The SOS code is used to compute the resonance modes (frequency-domain information) of sample devices and separately to compute the transient behavior of the same devices. A code, DOT, is created to compute appropriate dot products of the time-domain and frequency-domain results. The transient behavior of individual modes in the device is then plotted. Modes in a coupled-cavity traveling-wave tube (CCTWT) section excited beam in separate simulations are analyzed. Mode energy vs. time and mode phase vs. time are computed and it is determined whether the transient waves are forward or backward waves for each case. Finally, the hot-test mode frequencies of the CCTWT section are computed.

Bistable metamaterial for switching and cascading elastic vibrations

PubMed Central

Foehr, André; Daraio, Chiara

2017-01-01

The realization of acoustic devices analogous to electronic systems, like diodes, transistors, and logic elements, suggests the potential use of elastic vibrations (i.e., phonons) in information processing, for example, in advanced computational systems, smart actuators, and programmable materials. Previous experimental realizations of acoustic diodes and mechanical switches have used nonlinearities to break transmission symmetry. However, existing solutions require operation at different frequencies or involve signal conversion in the electronic or optical domains. Here, we show an experimental realization of a phononic transistor-like device using geometric nonlinearities to switch and amplify elastic vibrations, via magnetic coupling, operating at a single frequency. By cascading this device in a tunable mechanical circuit board, we realize the complete set of mechanical logic elements and interconnect selected ones to execute simple calculations. PMID:28416663

David S. Ginley | NREL

Science.gov Websites

is on the development of new nanomaterials for organic electronics and as biofilters etc. Dr are applying what they learn to improved devices, i.e. batteries, frequency agile electronics Society (ECS) Institute of Electrical and Electronics Engineers (IEEE) American Association for the

Active control of nano dimers response using piezoelectric effect

NASA Astrophysics Data System (ADS)

Mekkawy, Ahmed A.; Ali, Tamer A.; Badawi, Ashraf H.

2016-09-01

Nano devices can be used as building blocks for Internet of Nano-Things network devices, such as sensors/actuators, transceivers, and routers. Although nano particles response can be engineered to fit in different regimes, for such a nano particle to be used as an active nano device, its properties should be dynamically controlled. This controllability is a challenge, and there are many proposed techniques to tune nanoparticle response on the spot through a sort of control signal, wither that signal is optical (for all-optical systems) or electronic (for opto-electronic systems). This will allow the use of nano particles as nano-switches or as dynamic sensors that can pick different frequencies depending on surrounding conditions or depending on a smart decisions. In this work, we propose a piezoelectric substrate as an active control mediator to control plasmonic gaps in nano dimers. This method allows for integrating nano devices with regular electronics while communicating control signals to nano devices through applying electric signals to a piezoelectric material, in order to control the gaps between nano particles in a nano cluster. We do a full numerical study to the system, analyzing the piezoelectric control resolution (minimum gap change step) and its effect on a nanodimer response as a nanoantenna. This analysis considers the dielectric functions of materials within the visible frequencies range. The effects of different parameters, such as the piezoelectric geometrical structure and materials, on the gap control resolution and the operating frequency are studied.

Note: Force- and torque-detection of high frequency electron spin resonance using a membrane-type surface-stress sensor

NASA Astrophysics Data System (ADS)

Takahashi, Hideyuki; Ishimura, Kento; Okamoto, Tsubasa; Ohmichi, Eiji; Ohta, Hitoshi

2018-03-01

We developed a practical useful method for force- and torque-detected electron spin resonance (FDESR/TDESR) spectroscopy in the millimeter wave frequency region. This method uses a commercially available membrane-type surface-stress (MSS) sensor. The MSS is composed of a silicon membrane supported by four beams in which piezoresistive paths are integrated for detecting the deformation of the membrane. Although this device has a lower spin sensitivity than a microcantilever, it offers several distinct advantages, including mechanical strength, ease of use, and versatility. These advantages make this device suitable for practical applications that require FDESR/TDESR.

Low-frequency electronic noise in single-layer MoS2 transistors.

PubMed

Sangwan, Vinod K; Arnold, Heather N; Jariwala, Deep; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-09-11

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10(-5) Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.

Light modulated switches and radio frequency emitters

DOEpatents

Wilson, Mahlon T.; Tallerico, Paul J.

1982-01-01

The disclosure relates to a light modulated electron beam driven radiofrequency emitter. Pulses of light impinge on a photoemissive device which generates an electron beam having the pulse characteristics of the light. The electron beam is accelerated through a radiofrequency resonator which produces radiofrequency emission in accordance with the electron, hence, the light pulses.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

77 FR 53159 - Passenger Use of Portable Electronic Devices on Board Aircraft

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-31

... to navigation systems such as very high frequency (VHF) Omni Range (VOR) navigation systems. \\1\\ 14... navigation, communication, and surveillance radio receivers that may be susceptible at certain frequencies to... space by electromagnetic waves on specific radio frequencies that are used to communicate information...

Quantum state transfer in double-quantum-well devices

NASA Technical Reports Server (NTRS)

Jakumeit, Jurgen; Tutt, Marcel; Pavlidis, Dimitris

1994-01-01

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

PubMed Central

House, M. G.; Kobayashi, T.; Weber, B.; Hile, S. J.; Watson, T. F.; van der Heijden, J.; Rogge, S.; Simmons, M. Y.

2015-01-01

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon. PMID:26548556

Gigahertz Electromagnetic Structures via Direct Ink Writing for Radio-Frequency Oscillator and Transmitter Applications.

PubMed

Zhou, Nanjia; Liu, Chengye; Lewis, Jennifer A; Ham, Donhee

2017-04-01

Radio-frequency (RF) electronics, which combine passive electromagnetic devices and active transistors to generate and process gigahertz (GHz) signals, provide a critical basis of ever-pervasive wireless networks. While transistors are best realized by top-down fabrication, relatively larger electromagnetic passives are within the reach of printing techniques. Here, direct writing of viscoelastic silver-nanoparticle inks is used to produce a broad array of RF passives operating up to 45 GHz. These include lumped devices such as inductors and capacitors, and wave-based devices such as transmission lines, their resonant networks, and antennas. Moreover, to demonstrate the utility of these printed RF passive structures in active RF electronic circuits, they are combined with discrete transistors to fabricate GHz self-sustained oscillators and synchronized oscillator arrays that provide RF references, and wireless transmitters clocked by the oscillators. This work demonstrates the synergy of direct ink writing and RF electronics for wireless applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

ONR Far East Scientific Bulletin. Volume 8, Number 2, April to June 1983.

DTIC Science & Technology

1983-06-01

was in the Department of Metallurgy at Kyoto University. I spent one day with Professor K. Ono’s group who has studied the factors affecting the...Malaysian science and Institute of Fundamental Studies (IFS) technology Modern science Electronics Astronomy Hong Kong Magnetic field effects (MFE...growth Radio frequency studies Gallium arsenide crystal Silicon on sapphire (SOS) growth Solid state devices Electronic devices Royal Australian

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

PubMed Central

Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

2016-01-01

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

PubMed

Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

2016-02-18

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

Analytic model for low-frequency noise in nanorod devices.

PubMed

Lee, Jungil; Yu, Byung Yong; Han, Ilki; Choi, Kyoung Jin; Ghibaudo, Gerard

2008-10-01

In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f noise. In dual gate transistors, the interface states and oxide traps can compete with each other as the main noise source via random walk and tunneling, respectively.

Spike train generation and current-to-frequency conversion in silicon diodes

NASA Technical Reports Server (NTRS)

Coon, D. D.; Perera, A. G. U.

1989-01-01

A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.

Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

NASA Astrophysics Data System (ADS)

Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

2016-11-01

The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

RF Plasma Heating in the PFRC-2 Device: Motivation, Goals and Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cohen, S.; Brunkhorst, C.; Glasser, A.

2011-12-23

The motivation for using radio frequency, odd-parity rotating magnetic fields for heating field-reversed-configuration (FRC) plasmas is explained. Calculations are presented of the expected electron and ion temperatures in the PFRC-2 device, currently under construction.

Investigation of the effects of electron plasma frequency on the operation of a helix TWT

NASA Astrophysics Data System (ADS)

Oksuz, Lutfi; Haytural, Necati; Uygun, Emre; Bozduman, Ferhat; Yesiltepe, Hakan; Gulec, Ali

2016-10-01

The oscillations of electrons are an important subject for the design procedure of linear beam tubes such as klystrons and TWTs. These oscillation frequencies may be affected by the finite region of the tube if the plasma wavelength of the electrons are larger than the bounding region of the device, leading to a reduced plasma frequency which further leads to an increase in wavelength. Following the Pierce's theory on traveling wave tubes, it is seen that the reduced plasma frequency takes place in space charge terms which also include the Pierce's gain parameter C. In this study the effects of plasma frequency on the operation of a helix TWT are investigated using CST Particle Studio. This project is supported by TUBITAK with project number: 1140075.

Carbon nanotube transistor based high-frequency electronics

NASA Astrophysics Data System (ADS)

Schroter, Michael

At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

A synthetic mammalian electro-genetic transcription circuit.

PubMed

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-03-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts.

A synthetic mammalian electro-genetic transcription circuit

PubMed Central

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-01-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts. PMID:19190091

Characterization of quantum well structures using a photocathode electron microscope

NASA Technical Reports Server (NTRS)

Spencer, Michael G.; Scott, Craig J.

1989-01-01

Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

NASA Astrophysics Data System (ADS)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

Gigatron microwave amplifier

DOEpatents

McIntyre, P.M.

1993-07-13

An electron tube for achieving high power at high frequency with high efficiency is described, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot there through for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.

Gigatron microwave amplifier

DOEpatents

McIntyre, Peter M.

1993-01-01

An electron tube for achieving high power at high frequency with high efficiency, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot therethrough for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.

Thermally actuated resonant silicon crystal nanobalances

NASA Astrophysics Data System (ADS)

Hajjam, Arash

As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale electromechanical resonators have recently been presented. MEMS resonators, as low-cost highly integrated and ultra-sensitive mass sensors, can potentially provide new opportunities and unprecedented capabilities in the area of mass sensing. Such devices can provide orders of magnitude higher mass sensitivity and resolution compared to Film Bulk Acoustic resonators (FBAR) or the conventional quartz and Surface Acoustic Wave (SAW) resonators due to their much smaller sizes and can be batch-fabricated and utilized in highly integrated large arrays at a very low cost. In this research, comprehensive experimental studies on the performance and durability of thermally actuated micromechanical resonant sensors with frequencies up to tens of MHz have been performed. The suitability and robustness of the devices have been demonstrated for mass sensing applications related to air-borne particles and organic gases. In addition, due to the internal thermo-electro-mechanical interactions, the active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-sustained-oscillation without the need for any electronic circuitry. This unique property has been deployed to demonstrate a prototype self-sustained sensor for air-borne particle monitoring. I have managed to overcome one of the obstacles for MEMS resonators, which is their relatively poor temperature stability. This is a major drawback when compared with the conventional quartz crystals. A significant decrease of the large negative TCF for the resonators has been attained by doping the devices with a high concentration of phosphorous, resulting in even slightly positive TCF for some of the devices. This is also expected to improve the phase noise characteristics of oscillators implemented utilizing such frequency references by eliminating the sharp dependence to electronic noise in the resonator bias current. Finally it is well known that non-uniformities in fabrication of MEMS resonators lead to variations in their frequency. I have proposed both active (non-permanent) and permanent frequency modification to compensate for variations in frequency of the MEMS resonators.

Noise Temperature and IF Bandwidth of a 530 GHz Heterodyne Receiver Employing a Diffusion-Cooled Superconducting Hot-Electron Mixer

NASA Technical Reports Server (NTRS)

Skalare, A.; McGrath, W. R.; Bumble, B.; LeDuc, H. G.; Burke, P. J.; Verheijen, A. A.; Prober, D. E.

1995-01-01

We report on the first heterodyne measurements with a diffusion-cooled hot-electron bolometer mixer in the submillimeter wave band, using a waveguide mixer cooled to 2.2 K. The best receiver noise temperature at a local oscillator frequency of 533 GHz and an intermediate frequency of 1.4 GHz was 650 K (double sideband). The 3 dB IF roll-off frequency was around 1.7 to 1.9 GHz, with a weak dependence on the device bias conditions.

Experimental Study of Electron and Phonon Dynamics in Nanoscale Materials by Ultrafast Laser Time-Domain Spectroscopy

NASA Astrophysics Data System (ADS)

Shen, Xiaohan

With the rapid advances in the development of nanotechnology, nowadays, the sizes of elementary unit, i.e. transistor, of micro- and nanoelectronic devices are well deep into nanoscale. For the pursuit of cheaper and faster nanoscale electronic devices, the size of transistors keeps scaling down. As the miniaturization of the nanoelectronic devices, the electrical resistivity increases dramatically, resulting rapid growth in the heat generation. The heat generation and limited thermal dissipation in nanoscale materials have become a critical problem in the development of the next generation nanoelectronic devices. Copper (Cu) is widely used conducting material in nanoelectronic devices, and the electron-phonon scattering is the dominant contributor to the resistivity in Cu nanowires at room temperature. Meanwhile, phonons are the main carriers of heat in insulators, intrinsic and lightly doped semiconductors. The thermal transport is an ensemble of phonon transport, which strongly depends on the phonon frequency. In addition, the phonon transport in nanoscale materials can behave fundamentally different than in bulk materials, because of the spatial confinement. However, the size effect on electron-phonon scattering and frequency dependent phonon transport in nanoscale materials remain largely unexplored, due to the lack of suitable experimental techniques. This thesis is mainly focusing on the study of carrier dynamics and acoustic phonon transport in nanoscale materials. The weak photothermal interaction in Cu makes thermoreflectance measurement difficult, we rather measured the reflectivity change of Cu induced by absorption variation. We have developed a method to separately measure the processes of electron-electron scattering and electron-phonon scattering in epitaxial Cu films by monitoring the transient reflectivity signal using the resonant probe with particular wavelengths. The enhancement on electron-phonon scattering in epitaxial Cu films with thickness less than 100 nm was observed. The longitudinal acoustic phonon transport in silicon (Si) nanorod with confined diameter and length was investigated. The guided phonon modes in Si nanorod with different frequencies and wave vectors were observed. The mean-free-path of the guided phonons in Si nanorod was found to be larger than the effective phonon mean-free-path in Si film, because of the limited phonon scattering channels in Si nanorod. The phonon density of states and dispersion relation strongly depend on the size and boundary conditions of nanorod. Our work demonstrates the possibility of modifying the phonon transport properties in nanoscale materials by designing the size and boundary conditions, hence the control of thermal conductivity. In addition, the periodicity effect of nanostructures on acoustic phonon transport was investigated in silicon dioxide (SiO2) nanorod arrays. The lattice modes and mechanical eigenmodes were observed, and the pitch effect on lattice modes was discussed. A narrowband acoustic phonon spectroscopic technique with tunable frequency and spectral width throughout GHz frequency range has been developed to investigate the frequency-dependent acoustic phonon transport in nanoscale materials. The quadratic frequency dependence of acoustic attenuation of SiO2 and indium tin oxide (ITO) thin films was observed, and the acoustic attenuation of ITO was found to be larger than SiO2. Moreover, the acoustic control on mechanical resonance of nanoscale materials using the narrowband acoustic phonon source was demonstrated in tungsten thin film.

Selected Issues in DoD’s Radio Frequency Identification (RFID) Implementation

DTIC Science & Technology

2006-04-01

Evaluation of human exposure to electromagnetic fields from devices operating in the frequency range 0 Hz to 10 GHz, used in Electronic...standard for human exposure to RF Signal, 3 kHz-300 GHz BS EN 50364 Limitation of human exposure to electromagnetic fields from devices operating in the...Management and DoD Explosives Safety Board, and DoDD 6055.9-STD, DoD Ammunition and Explosives Safety Standards. Exposure of people to electromagnetic

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

High Power Microwave Emission of Large and Small Orbit Gyrotron Devices in Rectangular Interaction Structures

NASA Astrophysics Data System (ADS)

Hochman, J. M.; Gilgenbach, R. M.; Jaynes, R. L.; Rintamaki, J. I.; Luginsland, J. W.; Lau, Y. Y.; Spencer, T. A.

1996-11-01

Experiments utilize large and small orbit e-beam gyrotron devices in a rectangular-cross-section (RCS) gyrotron. This device is being explored to examine polarization control. Other research issues include pulse shortening, and mode competition. MELBA generates electron beams with parameters of: -800kV, 1-10kA diode current, and 0.5-1.0 μ sec pulselengths. The small orbit gyrotron device is converted to a large orbit experiment by running MELBA's annular electron beam through a magnetic cusp. Initial experiments showed an increase in beam alpha (V_perp/V_par) of a factor of ~ 4 between small and large orbit devices. Experimental results from the RCS gyrotron will be compared for large-orbit and small-orbit electron beams. Beam transport data and frequency measurements will be presented. Computer modeling utilizing the MAGIC and E-gun codes will be shown.

Sleep and use of electronic devices in adolescence: results from a large population-based study

PubMed Central

Hysing, Mari; Pallesen, Ståle; Stormark, Kjell Morten; Jakobsen, Reidar; Lundervold, Astri J; Sivertsen, Børge

2015-01-01

Objectives Adolescents spend increasingly more time on electronic devices, and sleep deficiency rising in adolescents constitutes a major public health concern. The aim of the present study was to investigate daytime screen use and use of electronic devices before bedtime in relation to sleep. Design A large cross-sectional population-based survey study from 2012, the youth@hordaland study, in Hordaland County in Norway. Setting Cross-sectional general community-based study. Participants 9846 adolescents from three age cohorts aged 16–19. The main independent variables were type and frequency of electronic devices at bedtime and hours of screen-time during leisure time. Outcomes Sleep variables calculated based on self-report including bedtime, rise time, time in bed, sleep duration, sleep onset latency and wake after sleep onset. Results Adolescents spent a large amount of time during the day and at bedtime using electronic devices. Daytime and bedtime use of electronic devices were both related to sleep measures, with an increased risk of short sleep duration, long sleep onset latency and increased sleep deficiency. A dose–response relationship emerged between sleep duration and use of electronic devices, exemplified by the association between PC use and risk of less than 5 h of sleep (OR=2.70, 95% CI 2.14 to 3.39), and comparable lower odds for 7–8 h of sleep (OR=1.64, 95% CI 1.38 to 1.96). Conclusions Use of electronic devices is frequent in adolescence, during the day as well as at bedtime. The results demonstrate a negative relation between use of technology and sleep, suggesting that recommendations on healthy media use could include restrictions on electronic devices. PMID:25643702

Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.

2005-01-01

Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

Phonon Enhancement of Electronic and Optoelectronic Devices

DTIC Science & Technology

2006-12-01

wave vector q determines the momentum transfer in the electron transition. Inasmuch as the polar mode confinement has not yet been studied in the InAs...and the geometry is compatible with the TM polarization of intersubband transitions. Due to the shallow skin depth in the metal (several hundred A...noise temperature ofa-1400 K is among the lowest at this high frequency. Figure 6 shows the schematic and measurement results of frequency locking of a

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Transmission and reflection of terahertz plasmons in two-dimensional plasmonic devices

DOE PAGES

Sydoruk, Oleksiy; Choonee, Kaushal; Dyer, Gregory Conrad

2015-03-10

We found that plasmons in two-dimensional semiconductor devices will be reflected by discontinuities, notably, junctions between gated and non-gated electron channels. The transmitted and reflected plasmons can form spatially- and frequency-varying signals, and their understanding is important for the design of terahertz detectors, oscillators, and plasmonic crystals. Using mode decomposition, we studied terahertz plasmons incident on a junction between a gated and a nongated channel. The plasmon reflection and transmission coefficients were found numerically and analytically and studied between 0.3 and 1 THz for a range of electron densities. At higher frequencies, we could describe the plasmons by a simplifiedmore » model of channels in homogeneous dielectrics, for which the analytical approximations were accurate. At low frequencies, however, the full geometry and mode spectrum had to be taken into account. Moreover, the results agreed with simulations by the finite-element method. As a result, mode decomposition thus proved to be a powerful method for plasmonic devices, combining the rigor of complete solutions of Maxwell's equations with the convenience of analytical expressions.« less

Effects of finite electron temperature on gradient drift instabilities in partially magnetized plasmas

NASA Astrophysics Data System (ADS)

Lakhin, V. P.; Ilgisonis, V. I.; Smolyakov, A. I.; Sorokina, E. A.; Marusov, N. A.

2018-01-01

The gradient-drift instabilities of partially magnetized plasmas in plasma devices with crossed electric and magnetic fields are investigated in the framework of the two-fluid model with finite electron temperature in an inhomogeneous magnetic field. The finite electron Larmor radius (FLR) effects are also included via the gyroviscosity tensor taking into account the magnetic field gradient. This model correctly describes the electron dynamics for k⊥ρe>1 in the sense of Padé approximants (here, k⊥ and ρe are the wavenumber perpendicular to the magnetic field and the electron Larmor radius, respectively). The local dispersion relation for electrostatic plasma perturbations with the frequency in the range between the ion and electron cyclotron frequencies and propagating strictly perpendicular to the magnetic field is derived. The dispersion relation includes the effects of the equilibrium E ×B electron current, finite ion velocity, electron inertia, electron FLR, magnetic field gradients, and Debye length effects. The necessary and sufficient condition of stability is derived, and the stability boundary is found. It is shown that, in general, the electron inertia and FLR effects stabilize the short-wavelength perturbations. In some cases, such effects completely suppress the high-frequency short-wavelength modes so that only the long-wavelength low-frequency (with respect to the lower-hybrid frequency) modes remain unstable.

Apparatus for Teaching Physics

ERIC Educational Resources Information Center

Gottlieb, Herbert H., Ed.

1977-01-01

Describes physics laboratory equipment including: circuit improvements for an electronic counter-timer, a commercial counter-timer-frequency meter, and a device for demonstrating resonating air columns. (SL)

Energy harvesting from low frequency applications using piezoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huidong; Tian, Chuan; Deng, Z. Daniel, E-mail: zhiqun.deng@pnnl.gov

2014-12-15

In an effort to eliminate the replacement of the batteries of electronic devices that are difficult or impractical to service once deployed, harvesting energy from mechanical vibrations or impacts using piezoelectric materials has been researched over the last several decades. However, a majority of these applications have very low input frequencies. This presents a challenge for the researchers to optimize the energy output of piezoelectric energy harvesters, due to the relatively high elastic moduli of piezoelectric materials used to date. This paper reviews the current state of research on piezoelectric energy harvesting devices for low frequency (0–100 Hz) applications and themore » methods that have been developed to improve the power outputs of the piezoelectric energy harvesters. Various key aspects that contribute to the overall performance of a piezoelectric energy harvester are discussed, including geometries of the piezoelectric element, types of piezoelectric material used, techniques employed to match the resonance frequency of the piezoelectric element to input frequency of the host structure, and electronic circuits specifically designed for energy harvesters.« less

Fractal design concepts for stretchable electronics.

PubMed

Fan, Jonathan A; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J; Huang, Yonggang; Rogers, John A

2014-01-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Fractal design concepts for stretchable electronics

NASA Astrophysics Data System (ADS)

Fan, Jonathan A.; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J.; Huang, Yonggang; Rogers, John A.

2014-02-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Reduction of 1/f noise in graphene after electron-beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zahid Hossain, Md.; Rumyantsev, Sergey; Ioffe Physical-Technical Institute, The Russian Academy of Sciences, St. Petersburg 194021

2013-04-15

We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S{sub I}/I{sup 2} (I is the source-drain current) by an order-of magnitude at the radiation dose of 10{sup 4} {mu}C/cm{sup 2}. We analyzed the observed noise reduction in the limiting cases of the mobility andmore » carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.« less

Ground EMI: designing the future trends in shallow depth surveying

NASA Astrophysics Data System (ADS)

Thiesson, J.; Schamper, C.; Simon, F. X.; Tabbagh, A.

2017-12-01

In theory, electromagnetic induction phenomena are driven by three fundamental properties (conductivity, susceptibility, permittivity). Since the 1930's, the developments of EMI prospecting were based on assumptions (Low frequency VS High frequency, low/high induction number). The design of the devices was focused on specific aims (diffusive/propagative, mapping/sounding) and, in the last thirty years the progressive transition from analog to numeric electronics completely enhanced the potency of measurements (multi-channeling, automatic positioning) a) as it did in model computation. In the field of metric sized devices for lower depths of investigation, the measurements have been first restricted to electrical conductivity. However, the measurement of the magnetic susceptibility proved to be possible thanks to in phase and quadrature separation, and the last developed commercially available multi-frequency and/or multi-receivers devices permit, thanks to accurate calibration, the measurements of the three properties with various geometries or frequencies simultaneously. The aims of this study is to present theoretical results in order to give hints for designing a device which can be optimal to evaluate the three properties and their frequency dependence.

Methods and devices based on brillouin selective sideband amplification

NASA Technical Reports Server (NTRS)

Yao, X. Steve (Inventor)

2003-01-01

Opto-electronic devices and techniques using Brillouin scattering to select a sideband in a modulated optical carrier signal for amplification. Two lasers respectively provide a carrier signal beam and a Brillouin pump beam which are fed into an Brillouin optical medium in opposite directions. The relative frequency separation between the lasers is adjusted to align the frequency of the backscattered Brillouin signal with a desired sideband in the carrier signal to effect a Brillouin gain on the sideband. This effect can be used to implement photonic RF signal mixing and conversion with gain, conversion from phase modulation to amplitude modulation, photonic RF frequency multiplication, optical and RF pulse generation and manipulation, and frequency-locking of lasers.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Electronic voltage and current transformers testing device.

PubMed

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

Optical, Electronic and Optoelectronic Material and Device Research

DTIC Science & Technology

1993-10-31

11, pp. 1275-1277 (September 1991). G. Griffel , W. K. Marshall, I. Grav6, and A. Yariv, "Frequency Control Using a Complex Effective Reflectivity in...Temperatures (5K)," Applied Physics Letters, vol. 58, no. 24, pp. 2752-2754 (June 1991). G. Griffel and A. Yariv, "Frequency Response and Tunability...of Grating- Assisted Directional Couplers," IEEE Journal of Quantum Electronics, vol. 27, no. 5, pp. 1115-1118 (May 1991). G. Griffel , H. Z. Chen, Ilan

Device for timing and power level setting for microwave applications

NASA Astrophysics Data System (ADS)

Ursu, M.-P.; Buidoş, T.

2016-08-01

Nowadays, the microwaves are widely used for various technological processes. The microwaves are emitted by magnetrons, which have strict requirements concerning power supplies for anode and filament cathodes, intensity of magnetic field, cooling and electromagnetic shielding. The magnetrons do not tolerate any alteration of their required voltages, currents and magnetic fields, which means that their output microwave power is fixed, so the only way to alter the power level is to use time-division, by turning the magnetron on and off by repetitive time patterns. In order to attain accurate and reproducible results, as well as correct and safe operation of the microwave device, all these requirements must be fulfilled. Safe, correct and reproducible operation of the microwave appliance can be achieved by means of a specially built electronic device, which ensures accurate and reproducible exposure times, interlocking of the commands and automatic switch off when abnormal operating conditions occur. This driving device, designed and realized during the completion of Mr.Ursu's doctoral thesis, consists of a quartz time-base, several programmable frequency and duration dividers, LED displays, sensors and interlocking gates. The active and passive electronic components are placed on custom-made PCB's, designed and made by means of computer-aided applications and machines. The driving commands of the electronic device are delivered to the magnetron power supplies by means of optic zero-passing relays. The inputs of the electronic driving device can sense the status of the microwave appliance. The user is able to enter the total exposure time, the division factor that sets the output power level and, as a novelty, the clock frequency of the time divider.

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

NASA Astrophysics Data System (ADS)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Free-electron laser from wave-mechanical beats of 2 electron beams

NASA Technical Reports Server (NTRS)

Lichtenstein, R. M.

1982-01-01

It is possible, though technically difficult, to produce beams of free electrons that exhibit beats of a quantum mechanical nature. (1) the generation of electromagnetic radiation, e.g., light, based on the fact that the beats give rise to alternating charge and current densities; and a frequency shifter, based on the fact that a beam with beats constitutes a moving grating. When such a grating is exposed to external radiation of suitable frequency and direction, the reflected rediation will be shifted in frequency, since the grating is moving. A twofold increase of the frequency is readily attainable. It is shown that it is impossible to generate radiation, because the alternating electromagnetic fields that accompany the beats cannot reform themselves into freely propagating waves. The frequency shifter is useless as a practical device, because its reflectance is extremely low for realizable beams.

Improvement of the low frequency oscillation model for Hall thrusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Wang, Huashan

2016-08-15

The low frequency oscillation of the discharge current in Hall thrusters is a major aspect of these devices that requires further study. While the existing model captures the ionization mechanism of the low frequency oscillation, it unfortunately fails to express the dynamic characteristics of the ion acceleration. The analysis in this paper shows this is because of the simplification of the electron equation, which affects both the electric field distribution and the ion acceleration process. Additionally, the electron density equation is revised and a new model that is based on the physical properties of ion movement is proposed.

Design of spherical electron gun for ultra high frequency, CW power inductive output tube

NASA Astrophysics Data System (ADS)

Kaushik, Meenu; Joshi, L. M.

2016-03-01

Inductive Output Tube (IOT) is an amplifier that usually operates in UHF range. It is an electron tube whose basic structure is similar to conventional vacuum devices. This device is widely used in broadcast applications but is now being explored for scientific applications also specifically, particle accelerators and fusion plasma heating purposes. The paper describes the design approach of a spherical gridded electron gun of a 500 MHz, 100 kW CW power IOT. The electron gun structure has been simulated and optimized for operating voltage and current of 40kV and 3.5 A respectively. The electromagnetic analysis of this spherical electron gun has been carried out in CST and TRAK codes.

Design of spherical electron gun for ultra high frequency, CW power inductive output tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaushik, Meenu, E-mail: mkceeri@gmail.com; Joshi, L. M., E-mail: lmj1953@gmail.com; Academy of Scientific and Innovative Research

Inductive Output Tube (IOT) is an amplifier that usually operates in UHF range. It is an electron tube whose basic structure is similar to conventional vacuum devices. This device is widely used in broadcast applications but is now being explored for scientific applications also specifically, particle accelerators and fusion plasma heating purposes. The paper describes the design approach of a spherical gridded electron gun of a 500 MHz, 100 kW CW power IOT. The electron gun structure has been simulated and optimized for operating voltage and current of 40kV and 3.5 A respectively. The electromagnetic analysis of this spherical electron gunmore » has been carried out in CST and TRAK codes.« less

A field-emission based vacuum device for the generation of THz waves

NASA Astrophysics Data System (ADS)

Lin, Ming-Chieh

2005-03-01

Terahertz waves have been used to characterize the electronic, vibrational and compositional properties of solid, liquid and gas phase materials during the past decade. More and more applications in imaging science and technology call for the well development of THz wave sources. Amplification and generation of a high frequency electromagnetic wave are a common interest of field emission based devices. In the present work, we propose a vacuum electronic device based on field emission mechanism for the generation of THz waves. To verify our thinking and designs, the cold tests and the hot tests have been studied via the simulation tools, SUPERFISH and MAGIC. In the hot tests, two types of electron emission mechanisms are considered. One is the field emission and the other is the explosive emission. The preliminary design of the device is carried out and tested by the numerical simulations. The simulation results show that an electronic efficiency up to 4% can be achieved without employing any magnetic circuits.

Preface: Heterostructure terahertz devices

NASA Astrophysics Data System (ADS)

Ryzhii, Victor

2008-08-01

The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which appear to be feasible for the realization of novel THz devices are put forward and discussed in this collection of experimental and theoretical papers. The issue starts with a paper by Akis et al which deals with a theoretical study of the operation of high electron mobility transistors at THz frequencies. For this, the authors use the numerical simulations using a full-band, cellular Monte Carlo transport model coupled to a full Poisson equation solver. The next three papers by Reklaitis, Balocco et al , and Mikhailov and Zieglel are devoted to considering new ideas related to frequency multiplication which can lead to the up-conversion of ac signals to THz frequencies. For this purpose, different concepts of the devices based on nontrivial heterostructures and materials are proposed and studied. The paper by Knap et al provides an overview of the authors experimental results on the plasma effects infield effect transistors. These effects can be used for the resonant detection of THz radiation and its emission. The observed THz emission from more complex device structures, namely, dual grating gate heterostrucures, which is attributed to the self-excitation of plasma waves, is discussed by Otsuji and his co-workers. The following two papers (by Ryzhii et al and Popov et al) deal with the development of device models and using the one which could explain the results of experimental observations described in the paper by Otsuji et al . In both these papers, the mechanisms of plasma wave instability in spatially periodic heterostructures are analyzed. In the paper by Starikov and his colleagues, an idea to utilize the transit-time resonance assisted by optical phonon emissionis revived and revisited. As demonstrated, this mechanism in the electron system in nitride-made heterostructures can lead to negative dynamic conductivity in the THz range of frequencies and, hence, be used for the generation of THz radiation. In the paper by Millithaler et al, Monte Carlo simulations are used to study the voltage fluctuationsaffected by the plasma oscillations in two-terminal heterostructures with an n-type InGaAs channel.Finally, the paper by Liu {\\it et al} is devoted to the concept of quantum cascade THz lasers using resonant tunneling in quantum dot systems instead of the standard multiple quantum well heterostructures.I would like to express my deep gratitude to all of the authors for having submitted high-quality papers. I am confident that this special issue will substantially promote further progress in THz technology.

Experimental investigation of 4 K pulse tube refrigerator

NASA Astrophysics Data System (ADS)

Gao, J. L.; Matsubara, Y.

During the last decades superconducting electronics has been the most prominent area of research for small scale applications of superconductivity. It has experienced quite a stormy development, from individual low frequency devices to devices with high integration density and pico second switching time. Nowadays it offers small losses, high speed and the potential for large scale integration and is superior to semiconducting devices in many ways — apart from the need for cooling by liquid helium for devices based on classical superconductors like niobium, or cooling by liquid nitrogen or cryocoolers (40K to 77K) for high-T c superconductors like YBa 2Cu 3O 7. This article gives a short overview over the current state of the art on typical devices out of the main application areas of superconducting electronics.

Experimental observation of electron-temperature-gradient turbulence in a laboratory plasma.

PubMed

Mattoo, S K; Singh, S K; Awasthi, L M; Singh, R; Kaw, P K

2012-06-22

We report the observation of electron-temperature-gradient (ETG) driven turbulence in the laboratory plasma of a large volume plasma device. The removal of unutilized primary ionizing and nonthermal electrons from uniform density plasma and the imposition and control of the gradient in the electron temperature (T[Symbol: see text] T(e)) are all achieved by placing a large (2 m diameter) magnetic electron energy filter in the middle of the device. In the dressed plasma, the observed ETG turbulence in the lower hybrid range of frequencies ν = (1-80 kHz) is characterized by a broadband with a power law. The mean wave number k perpendicular ρ(e) = (0.1-0.2) satisfies the condition k perpendicular ρ(e) ≤ 1, where ρ(e) is the electron Larmor radius.

Characterization of MgB2 Superconducting Hot Electron Bolometers

NASA Technical Reports Server (NTRS)

Cunnane, D.; Kawamura, J. H.; Wolak, M. A.; Acharya, N.; Tan, T.; Xi, X. X.; Karasik, B. S.

2014-01-01

Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.

Determination of Receiver Susceptibility to Radio Frequency Interference from Portable Electronic Devices

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.; Ely, Jay J.

2002-01-01

With the increasing pressures to allow wireless devices on aircraft, the susceptibility of aircraft receivers to interference from Portable Electronic Devices (PEDs) becomes an increasing concern. Many investigations were conducted in the past, with limited success, to quantify device emissions, path loss, and receiver interference susceptibility thresholds. This paper outlines the recent effort in determining the receiver susceptibility thresholds for ILS, VOR and GPS systems. The effort primarily consists of analysis of data available openly as reported in many RTCA and ICAO documents as well as manufacturers data on receiver sensitivity. Shortcomings with the susceptibility threshold data reported in the RTCA documents are presented, and an approach for an in-depth study is suggested. In addition, intermodulation products were observed and demonstrated in a laboratory experiment when multiple PEDs were in the proximity of each other. These intermodulation effects generate spurious frequencies that may fall within aircraft communication or navigation bands causing undesirable effects. Results from a preliminary analysis are presented that show possible harmful combinations of PEDs and the potentially affected aircraft bands.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

Mechanically detected terahertz electron spin resonance using SOI-based thin piezoresistive microcantilevers

NASA Astrophysics Data System (ADS)

Ohmichi, Eiji; Miki, Toshihiro; Horie, Hidekazu; Okamoto, Tsubasa; Takahashi, Hideyuki; Higashi, Yoshinori; Itoh, Shoichi; Ohta, Hitoshi

2018-02-01

We developed piezoresistive microcantilevers for mechanically detected electron spin resonance (ESR) in the millimeter-wave region. In this article, fabrication process and device characterization of our self-sensing microcantilevers are presented. High-frequency ESR measurements of a microcrystal of paramagnetic sample is also demonstrated at multiple frequencies up to 160 GHz at liquid helium temperature. Our fabrication is based on relatively simplified processes with silicon-on-insulator (SOI) wafers and spin-on diffusion doping, thus enabling cost-effective and time-saving cantilever fabrication.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Wang, Chun-Chi

2018-04-01

To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

Electronic Voltage and Current Transformers Testing Device

PubMed Central

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware. PMID:22368510

Using spread spectrum for AMR magnetic sensor

NASA Astrophysics Data System (ADS)

Vala, David

2016-09-01

This contribution describe invention of Magnetometer with protection against detection by electronic counter- measure (ECM) registered by Czech patent office as patent no. 305322.1 Magnetic sensors are often part of dual use or security instruments and equipment. For this purpose is very interesting to build sensor with is hidden against electronic countermeasure. In this case is very important level and behavior of electromagnetic noise produced by sensor. And also electromagnetic compatibility of electronic devices is the area which significant grows nowadays too. As the consequence of this growth there is a continuous process of making more strict standards focused on electromagnetic radiation of electronic devices. Sensors technology begins to be a part of these issues due sensors bandwidth increasing and approaching to frequency of radio communication band. Nowadays microcontrollers and similar digital circuits are integrated into sensors devices and it brings new sources of electromagnetic radiation in modern smart sensors.

Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip.

PubMed

Wang, Jian; Shen, Hao; Fan, Li; Wu, Rui; Niu, Ben; Varghese, Leo T; Xuan, Yi; Leaird, Daniel E; Wang, Xi; Gan, Fuwan; Weiner, Andrew M; Qi, Minghao

2015-01-12

Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip

PubMed Central

Wang, Jian; Shen, Hao; Fan, Li; Wu, Rui; Niu, Ben; Varghese, Leo T.; Xuan, Yi; Leaird, Daniel E.; Wang, Xi; Gan, Fuwan; Weiner, Andrew M.; Qi, Minghao

2015-01-01

Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics. PMID:25581847

A pilot study on the reproductive risks of maternal exposure to magnetic fields from electronic article surveillance systems.

PubMed

Khan, Muhammad Waseem; Roivainen, Päivi; Herrala, Mikko; Tiikkaja, Maria; Sallmén, Markku; Hietanen, Maila; Juutilainen, Jukka

2018-02-26

We investigated the feasibility of a large-scale epidemiological study on reproductive effects of intermediate frequency (IF) magnetic field (MF) exposure among cashiers working near electronic article surveillance (EAS) systems. The study cohort included 4157 women who had worked as cashiers in supermarkets with EAS devices (considered as exposed) or grocery stores without EAS devices (considered as unexposed) between 2008 and 2015. 536 births and 38 miscarriages occurred among these women during the study period, based on information from nationwide health registries. Measurements were also performed to characterize the MF exposure of cashiers. Cashiers were found to be exposed to 8.2 MHz MFs only when passing by the gates at short distance. Static fields of about 0.1 mT were observed at cashier's seat. Extremely low frequency MFs were higher at stores without EAS devices. No differences on the risk of miscarriage, reduced birth weight or preterm birth were observed between cashiers in different store types. Any further studies should attempt to include study subjects working near EAS systems that produce stronger IF MFs at kHz frequencies. Exposure to ELF MFs should be assessed as a possible confounding factor.

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Sleep and use of electronic devices in adolescence: results from a large population-based study.

PubMed

Hysing, Mari; Pallesen, Ståle; Stormark, Kjell Morten; Jakobsen, Reidar; Lundervold, Astri J; Sivertsen, Børge

2015-02-02

Adolescents spend increasingly more time on electronic devices, and sleep deficiency rising in adolescents constitutes a major public health concern. The aim of the present study was to investigate daytime screen use and use of electronic devices before bedtime in relation to sleep. A large cross-sectional population-based survey study from 2012, the youth@hordaland study, in Hordaland County in Norway. Cross-sectional general community-based study. 9846 adolescents from three age cohorts aged 16-19. The main independent variables were type and frequency of electronic devices at bedtime and hours of screen-time during leisure time. Sleep variables calculated based on self-report including bedtime, rise time, time in bed, sleep duration, sleep onset latency and wake after sleep onset. Adolescents spent a large amount of time during the day and at bedtime using electronic devices. Daytime and bedtime use of electronic devices were both related to sleep measures, with an increased risk of short sleep duration, long sleep onset latency and increased sleep deficiency. A dose-response relationship emerged between sleep duration and use of electronic devices, exemplified by the association between PC use and risk of less than 5 h of sleep (OR=2.70, 95% CI 2.14 to 3.39), and comparable lower odds for 7-8 h of sleep (OR=1.64, 95% CI 1.38 to 1.96). Use of electronic devices is frequent in adolescence, during the day as well as at bedtime. The results demonstrate a negative relation between use of technology and sleep, suggesting that recommendations on healthy media use could include restrictions on electronic devices. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Recent advances in molecular electronics based on carbon nanotubes.

PubMed

Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

2010-01-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

Detecting the Use of Intentionally Transmitting Personal Electronic Devices Onboard Commercial Aircraft

NASA Technical Reports Server (NTRS)

Woods, Randy; Ely, Jay J.; Vahala, Linda

2003-01-01

The need to detect unauthorized usage of intentionally transmitting portable electronic devices (PEDs) onboard commercial aircraft is growing, while still allowing passengers to use selected unintentionally transmitting devices, such as laptop computers and CD players during non-critical stages of flight. The following paper presents an installed system for detecting PEDs over multiple frequency bands. Additionally, the advantages of a fixed verses mobile system are discussed. While data is presented to cover the frequency range of 20 MHz to 6.5 GHz, special attention was given to the Cellular/PCS bands as well as Bluetooth and the FRS radio bands. Measurement data from both the semi-anechoic and reverberation chambers are then analyzed and correlated with data collected onboard a commercial aircraft to determine the dominant mode of coupling inside the passenger cabin of the aircraft versus distance from the source. As a final check of system feasibility, several PEDs transmission signatures were recorded and compared with the expected levels.

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

NASA Astrophysics Data System (ADS)

Islam, R.; Uddin, M. M.; Hossain, M. Mofazzal; Matin, M. A.

The design of a 1μm gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42m2V-1s-1 at Vg=0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of ˜4.85mS/μm and a drain current density of more than 3.34mA/μm. A short-circuit current-gain cut-off frequency (fT) of 374GHz and a maximum oscillation frequency (fmax) of 645GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

Terahertz magnonics: Feasibility of using terahertz magnons for information processing

NASA Astrophysics Data System (ADS)

Zakeri, Khalil

2018-06-01

An immediate need of information technology is designing fast, small and low-loss devices. One of the ways to design such devices is using the bosonic quasiparticles, such as magnons, for information transfer/processing. This is the main idea behind the field of magnonics. When a magnon propagates through a magnetic medium, no electrical charge transport is involved and therefore no energy losses, creating Joule heating, occur. This is the most important advantage of using magnons for information transfer. Moreover the mutual conversion between magnons and the other carriers e.g. electrons, photons and plasmons shall open new opportunities to realize tunable multifunctional devices. Magnons cover a very wide range of frequency, from sub-gigahertz up to a few hundreds of terahertz. The magnon frequency has an important impact on the performance of magnon-based devices (the larger the excitation frequency, the faster the magnons). This means that the use of high-frequency (terahertz) magnons would provide a great opportunity for the design of ultrafast devices. However, up to now the focus in magnonics has been on the low-frequency gigahertz magnons. Here we discuss the feasibility of using terahertz magnons for application in magnonic devices. We shall bring the concept of terahertz magnonics into discussion. We discuss how the recently discovered phenomena in the field of terahertz magnons may inspire ideas for designing new magnonic devices. We further introduce methods to tune the fundamental properties of terahertz magnons, e.g. their eigenfrequency and lifetime.

High-frequency acoustic spectrum analyzer based on polymer integrated optics

NASA Astrophysics Data System (ADS)

Yacoubian, Araz

This dissertation presents an acoustic spectrum analyzer based on nonlinear polymer-integrated optics. The device is used in a scanning heterodyne geometry by zero biasing a Michelson interferometer. It is capable of detecting vibrations from DC to the GHz range. Initial low frequency experiments show that the device is an effective tool for analyzing an acoustic spectrum even in noisy environments. Three generations of integrated sensors are presented, starting with a very lossy (86 dB total insertion loss) initial device that detects vibrations as low as λ/10, and second and third generation improvements with a final device of 44 dB total insertion loss. The sensor was further tested for detecting a pulsed laser-excited vibration and resonances due to the structure of the sample. The data are compared to the acoustic spectrum measured using a low loss passive fiber interferometer detection scheme which utilizes a high speed detector. The peaks present in the passive detection scheme are clearly visible with our sensor data, which have a lower noise floor. Hybrid integration of GHz electronics is also investigated in this dissertation. A voltage controlled oscillator (VCO) is integrated on a polymer device using a new approach. The VCO is shown to operate as specified by the manufacturer, and the RF signal is efficiently launched onto the micro-strip line used for EO modulation. In the future this technology can be used in conjunction with the presented sensor to produce a fully integrated device containing high frequency drive electronics controlled by low DC voltage. Issues related to device fabrication, loss analysis, RF power delivery to drive circuitry, efficient poling of large area samples, and optimizing poling conditions are also discussed throughout the text.

Optically programmable electron spin memory using semiconductor quantum dots.

PubMed

Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

2004-11-04

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

77 FR 29689 - Receipt of Amended Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-18

... complaint entitled Certain Radio Frequency Integrated Circuits and Devices Containing Same, DN 2877; the... of the complaint can be accessed on the Commission's electronic docket (EDIS) at http://edis.usitc... viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons...

77 FR 10556 - Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-22

... Certain Radio Frequency Integrated Circuits and Devices Containing Same, DN 2877; the Commission is... accessed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for....gov ). The public record for this investigation may be viewed on the Commission's electronic docket...

Universal Features of Electron Dynamics in Solar Cells with TiO2 Contact: From Dye Solar Cells to Perovskite Solar Cells.

PubMed

Todinova, Anna; Idígoras, Jesús; Salado, Manuel; Kazim, Samrana; Anta, Juan A

2015-10-01

The electron dynamics of solar cells with mesoporous TiO2 contact is studied by electrochemical small-perturbation techniques. The study involved dye solar cells (DSC), solid-state perovskite solar cells (SSPSC), and devices where the perovskite acts as sensitizer in a liquid-junction device. Using a transport-recombination continuity equation we found that mid-frequency time constants are proper lifetimes that determine the current-voltage curve. This is not the case for the SSPSC, where a lifetime of ∼1 μs, 1 order of magnitude longer, is required to reproduce the current-voltage curve. This mismatch is attributed to the dielectric response on the mid-frequency component. Correcting for this effect, lifetimes lie on a common exponential trend with respect to open-circuit voltage. Electron transport times share a common trend line too. This universal behavior of lifetimes and transport times suggests that the main difference between the cells is the power to populate the mesoporous TiO2 contact with electrons.

Tubes in space - Very much alive

NASA Technical Reports Server (NTRS)

Kosmahl, H. G.

1983-01-01

Some advantages of TWTs over SSDs are discussed. Wideband TWTs have been developed which can produce 20 W of RF power at 20 GHz with 40 percent efficiency, a figure three or four times that available from SSDs such as FETs. The basic performance of TWTs exceeds that of SSDs for any given bandwidth and frequency. SSDs are transit time limited, and their performance deteriorates fundamentally as the reciprocal of the square of the operating frequency. Power limits for SSDs have been reached or are quickly being approached. Free electron devices such as tubes have an efficiency advantage because electrons in the vacuum travel faster than bulk charges in SSDs. Combined SSD devices are prone to burnout and incur penalties due to the need to dissipate heat. TWTs have a 6.7:1 advantage in radiator area ratio. Recent progress in TWT technology has produced a tenfold increase in CW output power, doubled to quadrupled the efficiency, and pushed frequency ranges into the terahertz region, orders of magnitude beyond the SSD cutoff.

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

DTIC Science & Technology

2012-02-07

circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The asobtained thin-film transistors ( TFTs ) exhibit... flexible substrates for digital, analog and radio frequency applications. The as- obtained thin-film transistors ( TFTs ) exhibit highly uniform device...LCD) and organic light- emitting diode ( OLED ) displays lack the transparency and flexibility and are thus unsuitable for flexible electronic

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

NASA Astrophysics Data System (ADS)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

Microfocus computed tomography in medicine

NASA Astrophysics Data System (ADS)

Obodovskiy, A. V.

2018-02-01

Recent advances in the field of high-frequency power schemes for X-ray devices allow the creation of high-resolution instruments. At the department of electronic devices and Equipment of the St. Petersburg State Electrotechnical University, a model of a microfocus computer tomograph was developed. Used equipment allows to receive projection data with an increase up to 100 times. A distinctive feature of the device is the possibility of implementing various schemes for obtaining projection data.

Gigahertz flexible graphene transistors for microwave integrated circuits.

PubMed

Yeh, Chao-Hui; Lain, Yi-Wei; Chiu, Yu-Chiao; Liao, Chen-Hung; Moyano, David Ricardo; Hsu, Shawn S H; Chiu, Po-Wen

2014-08-26

Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

PubMed Central

Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

2014-01-01

With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of implanted device research in the future. This review will hopefully lead to increasing efforts towards the development of low powered, highly efficient, high data rate and reliable automatic frequency controllers for implanted devices. PMID:25615728

Influence of frequency tuning and double-frequency heating on ions extracted from an electron cyclotron resonance ion source

NASA Astrophysics Data System (ADS)

Maimone, F.; Celona, L.; Lang, R.; Mäder, J.; Roßbach, J.; Spädtke, P.; Tinschert, K.

2011-12-01

The electromagnetic field within the plasma chamber of an electron cyclotron resonance ion source (ECRIS) and the properties of the plasma waves affect the plasma properties and ion beam production. We have experimentally investigated the "frequency tuning effect" and "double frequency heating" on the CAPRICE ECRIS device. A traveling wave tube amplifier, two microwave sweep generators, and a dedicated experimental set-up were used to carry out experiments in the 12.5-16.5 GHz frequency range. During the frequency sweeps the evolution of the intensity and shape of the extracted argon beam were measured together with the microwave reflection coefficient. A range of different ion source parameter settings was used. Here we describe these experiments and the resultant improved understanding of these operational modes of the ECR ion source.

Influence of frequency tuning and double-frequency heating on ions extracted from an electron cyclotron resonance ion source.

PubMed

Maimone, F; Celona, L; Lang, R; Mäder, J; Rossbach, J; Spädtke, P; Tinschert, K

2011-12-01

The electromagnetic field within the plasma chamber of an electron cyclotron resonance ion source (ECRIS) and the properties of the plasma waves affect the plasma properties and ion beam production. We have experimentally investigated the "frequency tuning effect" and "double frequency heating" on the CAPRICE ECRIS device. A traveling wave tube amplifier, two microwave sweep generators, and a dedicated experimental set-up were used to carry out experiments in the 12.5-16.5 GHz frequency range. During the frequency sweeps the evolution of the intensity and shape of the extracted argon beam were measured together with the microwave reflection coefficient. A range of different ion source parameter settings was used. Here we describe these experiments and the resultant improved understanding of these operational modes of the ECR ion source.

Observation of the electron density fluctuations by using the O-mode Microwave Imaging Reflectometry in LHD

NASA Astrophysics Data System (ADS)

Nagayama, Yoshio; Yamaguchi, Soichiro; Tsuchiya, Hayato; Kuwahara, Daisuke; LHD Experimental Team

2016-10-01

Visualization of local electron density fluctuations will be very useful to study the physics of confinement and instabilities in fusion plasma. In the Large Helical Device (LHD), the O-mode microwave imaging reflectometry (O-MIR) has been intensively developed in order to visualize the electron density fluctuations. The frequency is 26 - 34 GHz. This corresponds to the electron density of 0.8 - 1.5 × 1019 m-3. The plasma is illuminated by the Gaussian beam with four frequencies. The imaging optics make a plasma image onto the newly developed 2D (8 × 8) Horn-antenna Millimeter-wave Imaging Device (HMID). In HMID, the signal wave that is accumulated by the horn antenna is transduced to the micro-strip line by using the finline transducer. The signal wave is mixed by the double balanced mixer with the local wave that is delivered by cables. By using O-MIR, electron density fluctuations are measured at the H-mode edge and the ITB layer in LHD. This work is supported by NIFS/NINS under the project of Formation of International Scientific Base and Network, by the NIFS LHD project, by KAKENHI, and by IMS.

Optical frequency shot-noise suppression in electron beams: Three-dimensional analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nause, A.; Dyunin, E.; Gover, A.

2010-05-15

A predicted effect of current shot-noise suppression at optical-frequencies in a drifting charged-particle-beam and the corresponding process of particles self-ordering are analyzed in a one-dimensional (1D) model and verified by three-dimensional numerical simulations. The analysis confirms the prediction of a 1D single mode Langmuir plasma wave model of longitudinal plasma oscillation in the beam, and it defines the regime of beam parameters in which this effect takes place. The suppression of relativistic beam shot noise can be utilized to enhance the coherence of free electron lasers and of any coherent radiation device using an electron beam.

Characteristics of electron-wave interaction in orotron-DRG type devices at the higher modes

NASA Astrophysics Data System (ADS)

Shmatko, A. A.

The excitation of oscillations in an orotron/diffraction-radiation generator at the higher longitudinal modes of the open resonator is analyzed with allowance for the space-charge field of the electron beam, represented by Fourier series in time harmonics of the oscillation frequency. Analytical expressions for the amplitude-frequency characteristics of the starting regime are obtained, and the case of large oscillation amplitudes (where nonlinear phenomena are significant) is analyzed numerically. The collective interaction of beam electrons and the resonator field is examined. Oscillation zones are determined, and the main characteristics of oscillation excitation at the higher modes are established.

Suppression of low-frequency charge noise in superconducting resonators by surface spin desorption.

PubMed

de Graaf, S E; Faoro, L; Burnett, J; Adamyan, A A; Tzalenchuk, A Ya; Kubatkin, S E; Lindström, T; Danilov, A V

2018-03-20

Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge about their chemical and physical nature. Here, by combining dielectric loss, frequency noise and on-chip electron spin resonance measurements in superconducting resonators, we demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the charge-induced frequency noise in the resonators. These measurements provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and highlights their role in generating charge noise in solid-state quantum devices.

Observation of magnetic fluctuations and rapid density decay of magnetospheric plasma in Ring Trap 1

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Yano, Y.; Mikami, H.; Kasaoka, N.; Sakamoto, W.

2012-06-01

The Ring Trap 1 device, a magnetospheric configuration generated by a levitated dipole field magnet, has created high-β (local β ˜ 70%) plasma by using electron cyclotron resonance heating (ECH). When a large population of energetic electrons is generated at low neutral gas pressure operation, high frequency magnetic fluctuations are observed. When the fluctuations are strongly excited, rapid loss of plasma was simultaneously observed especially in a quiet decay phase after the ECH microwave power is turned off. Although the plasma is confined in a strongly inhomogeneous dipole field configuration, the frequency spectra of the fluctuations have sharp frequency peaks, implying spatially localized sources of the fluctuations. The fluctuations are stabilized by decreasing the hot electron component below approximately 40%, realizing stable high-β confinement.

Recent developments in terahertz sensing technology

NASA Astrophysics Data System (ADS)

Shur, Michael

2016-05-01

Terahertz technology has found numerous applications for the detection of biological and chemical hazardous agents, medical diagnostics, detection of explosives, providing security in buildings, airports, and other public spaces, shortrange covert communications (in the THz and sub-THz windows), and applications in radio astronomy and space research. The expansion of these applications will depend on the development of efficient electronic terahertz sources and sensitive low-noise terahertz detectors. Schottky diode frequency multipliers have emerged as a viable THz source technology reaching a few THz. High speed three terminal electronic devices (FETs and HBTs) have entered the THz range (with cutoff frequencies and maximum frequencies of operation above 1 THz). A new approach called plasma wave electronics recently demonstrated an efficient terahertz detection in GaAs-based and GaN-based HEMTs and in Si MOS, SOI, FINFETs and in FET arrays. This progress in THz electronic technology has promise for a significant expansion of THz applications.

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

NASA Technical Reports Server (NTRS)

Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

2005-01-01

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

Simulation of 100-300 GHz solid-state harmonic sources

NASA Technical Reports Server (NTRS)

Zybura, Michael F.; Jones, J. Robert; Jones, Stephen H.; Tait, Gregory B.

1995-01-01

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

Arrays of Carbon Nanotubes as RF Filters in Waveguides

NASA Technical Reports Server (NTRS)

Hoppe, Daniel; Hunt, Brian; Hoenk, Michael; Noca, Flavio; Xu, Jimmy

2003-01-01

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Micromechanical Devices to Reduce 1/f Noise in Magnetic Field and Electric Charge Sensors

NASA Astrophysics Data System (ADS)

Jaramillo, Gerardo

1/f noise is present in every aspect of nature. Sensors and read-out electronics have the ultimate detection limit set by the noise floor of the white noise. In order to increase signal-to-noise ratio (SNR) of low frequency signals buried by high 1/f noise, the signal can be up-converted to a high frequency signal that lies in the lower white noise regime of the sensing device. Mechanical modulation can be employed to move low frequency electronic signals to higher frequency region through the use of microresonators. This thesis has two goals: (1) develop and fabricate a hybrid micromechanical-magnetoresistive magnetic field sensor; and (2) design an electrometer to measure currents collected from air streams containing ionized nano-particles. First, we designed magnetoresistive-microelectromechanical systems (MR-MEMS) hybrid devices based on the monolithic integration of magnetic thin films and silicon-on-insulator (SOI) MEMS fabrication techniques. We used MgO-based magnetic tunnel junctions (MTJ) placed on a bulk micromachined silicon MEMS device to form a hybrid sensing device. The MEMS device was used to mechanically modulate the magnetic field signal detected by the MTJ, thereby reducing the effects of 1/f noise on the MTJ's output. Two actuator designs were investigated: cantilever and electrostatic comb-drive. The second component of the thesis presents a MEMS-based electrometer for the detection of small currents from ionized particles in a particle detection system for air-quality monitoring. One method of particle detection ionizes particles and then feeds a stream of charged particles into a Faraday cup electrometer. We replaced the Faraday cup with a filtering porous mesh sensing-electrode coupled to a MEMS electrometer with a noise floor below 1 fA rms. Experiments were conducted with fA level currents produced by 10 nm diameter particles within an airflow of 1.0 L/min. The MEMS electrometer was compared and calibrated using commercial electrometers and particle counters.

Hole-cyclotron instability in semiconductor quantum plasmas

NASA Astrophysics Data System (ADS)

Areeb, F.; Rasheed, A.; Jamil, M.; Siddique, M.; Sumera, P.

2018-01-01

The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model. The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of. The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥z ̂ , speed of the externally injected electron beam v0∥k , thermal temperature of the electron beam τ, external magnetic field B0∥z ̂ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density. The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.

Nanoelectromechanical systems: Nanodevice motion at microwave frequencies

NASA Astrophysics Data System (ADS)

Henry Huang, Xue Ming; Zorman, Christian A.; Mehregany, Mehran; Roukes, Michael L.

2003-01-01

It has been almost forgotten that the first computers envisaged by Charles Babbage in the early 1800s were mechanical and not electronic, but the development of high-frequency nanoelectromechanical systems is now promising a range of new applications, including sensitive mechanical charge detectors and mechanical devices for high-frequency signal processing, biological imaging and quantum measurement. Here we describe the construction of nanodevices that will operate with fundamental frequencies in the previously inaccessible microwave range (greater than 1 gigahertz). This achievement represents a significant advance in the quest for extremely high-frequency nanoelectromechanical systems.

Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.

2017-06-01

This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

DTIC Science & Technology

2017-10-16

DARPA) or the U.S. Government. Report contains color. 14. ABSTRACT The objective of this project is to experimentally study the transient non ...the Metal Thin Film in TDTR ........................................ 14 4.3 Experimental Observation of the Frequency Filtering Effect...scale of the device layers and the high density of interfaces, non -diffusive heat conduction plays a critical role in thermal transport of GaN devices

The role of organizational context and individual nurse characteristics in explaining variation in use of information technologies in evidence based practice

PubMed Central

2012-01-01

Background There is growing awareness of the role of information technology in evidence-based practice. The purpose of this study was to investigate the role of organizational context and nurse characteristics in explaining variation in nurses’ use of personal digital assistants (PDAs) and mobile Tablet PCs for accessing evidence-based information. The Promoting Action on Research Implementation in Health Services (PARIHS) model provided the framework for studying the impact of providing nurses with PDA-supported, evidence-based practice resources, and for studying the organizational, technological, and human resource variables that impact nurses’ use patterns. Methods A survey design was used, involving baseline and follow-up questionnaires. The setting included 24 organizations representing three sectors: hospitals, long-term care (LTC) facilities, and community organizations (home care and public health). The sample consisted of 710 participants (response rate 58%) at Time 1, and 469 for whom both Time 1 and Time 2 follow-up data were obtained (response rate 66%). A hierarchical regression model (HLM) was used to evaluate the effect of predictors from all levels simultaneously. Results The Chi square result indicated PDA users reported using their device more frequently than Tablet PC users (p = 0.001). Frequency of device use was explained by ‘breadth of device functions’ and PDA versus Tablet PC. Frequency of Best Practice Guideline use was explained by ‘willingness to implement research,’ ‘structural and electronic resources,’ ‘organizational slack time,’ ‘breadth of device functions’ (positive effects), and ‘slack staff’ (negative effect). Frequency of Nursing Plus database use was explained by ‘culture,’ ‘structural and electronic resources,’ and ‘breadth of device functions’ (positive effects), and ‘slack staff’ (negative). ‘Organizational culture’ (positive), ‘breadth of device functions’ (positive), and ‘slack staff ‘(negative) were associated with frequency of Lexi/PEPID drug dictionary use. Conclusion Access to PDAs and Tablet PCs supported nurses’ self-reported use of information resources. Several of the organizational context variables and one individual nurse variable explained variation in the frequency of information resource use. PMID:23276201

High Temperature Superconductivity Applications for Electronic Warfare and Microwave Systems

DTIC Science & Technology

1990-05-01

instantaneous frequency measurement (IFM), as well as, switched delay lines for EW radar range deception and low loss, high resolution MMIC phase...Junction (JJ). This device has been demonstrated in LTSC and is used in very stable ( low noise ), frequency selective, oscillators and very low noise ...following HTSC components: 1) MMIC Filters 2) MMIC Delay Lines/Phase Shifters 3) Microwave Resonators 4) Antenna Feed Networks 5) Low Frequency Antennas 1

Electronic control of gene expression and cell behaviour in Escherichia coli through redox signalling

NASA Astrophysics Data System (ADS)

Tschirhart, Tanya; Kim, Eunkyoung; McKay, Ryan; Ueda, Hana; Wu, Hsuan-Chen; Pottash, Alex Eli; Zargar, Amin; Negrete, Alejandro; Shiloach, Joseph; Payne, Gregory F.; Bentley, William E.

2017-01-01

The ability to interconvert information between electronic and ionic modalities has transformed our ability to record and actuate biological function. Synthetic biology offers the potential to expand communication `bandwidth' by using biomolecules and providing electrochemical access to redox-based cell signals and behaviours. While engineered cells have transmitted molecular information to electronic devices, the potential for bidirectional communication stands largely untapped. Here we present a simple electrogenetic device that uses redox biomolecules to carry electronic information to engineered bacterial cells in order to control transcription from a simple synthetic gene circuit. Electronic actuation of the native transcriptional regulator SoxR and transcription from the PsoxS promoter allows cell response that is quick, reversible and dependent on the amplitude and frequency of the imposed electronic signals. Further, induction of bacterial motility and population based cell-to-cell communication demonstrates the versatility of our approach and potential to drive intricate biological behaviours.

Spectrally pure RF photonic source based on a resonant optical hyper-parametric oscillator

NASA Astrophysics Data System (ADS)

Liang, W.; Eliyahu, D.; Matsko, A. B.; Ilchenko, V. S.; Seidel, D.; Maleki, L.

2014-03-01

We demonstrate a free running 10 GHz microresonator-based RF photonic hyper-parametric oscillator characterized with phase noise better than -60 dBc/Hz at 10 Hz, -90 dBc/Hz at 100 Hz, and -150 dBc/Hz at 10 MHz. The device consumes less than 25 mW of optical power. A correlation between the frequency of the continuous wave laser pumping the nonlinear resonator and the generated RF frequency is confirmed. The performance of the device is compared with the performance of a standard optical fiber based coupled opto-electronic oscillator of OEwaves.

A new method of radio frequency links by coplanar coils for implantable medical devices.

PubMed

Xue, L; Hao, H W; Li, L; Ma, B Z

2005-01-01

A new method based on coplanar coils for the design of radio frequency links has been developed, to realize the communication between the programming wand and the implantable medical devices with shielding container simply and reliably. With the analysis of electronic and magnetic field theory, the communication model has been established and simulated, and the circuit has been designed and tested. The experimental results are consistent with the simulation fairly well. The voltage transfer ratio of the typical circuit with present parameters can reach as high as 0.02, which can fulfill the requirements of communication.

Electrically Driving Donor Spin Qubits in Silicon Using Photonic Bandgap Resonators

NASA Astrophysics Data System (ADS)

Sigillito, A. J.; Tyryshkin, A. M.; Lyon, S. A.

In conventional experiments, donor nuclear spin qubits in silicon are driven using radiofrequency (RF) magnetic fields. However, magnetic fields are difficult to confine at the nanoscale, which poses major issues for individually addressable qubits and device scalability. Ideally one could drive spin qubits using RF electric fields, which are easy to confine, but spins do not naturally have electric dipole transitions. In this talk, we present a new method for electrically controlling nuclear spin qubits in silicon by modulating the hyperfine interaction between the nuclear spin qubit and the donor-bound electron. By fabricating planar superconducting photonic bandgap resonators, we are able to use pulsed electron-nuclear double resonance (ENDOR) techniques to selectively probe both electrically and magnetically driven transitions for 31P and 75As nuclear spin qubits. The electrically driven spin resonance mechanism allows qubits to be driven at either their transition frequency, or at one-half their transition frequency, thus reducing bandwidth requirements for future quantum devices. Moreover, this form of control allows for higher qubit densities and lower power requirements compared to magnetically driven schemes. In our proof-of-principle experiments we demonstrate electrically driven Rabi frequencies of approximately 50 kHz for widely spaced (10 μm) gates which should be extendable to MHz for nanoscale devices.

Compact atmospheric pressure plasma self-resonant drive circuits

NASA Astrophysics Data System (ADS)

Law, V. J.; Anghel, S. D.

2012-02-01

This paper reports on compact solid-state self-resonant drive circuits that are specifically designed to drive an atmospheric pressure plasma jet and a parallel-plate dielectric barrier discharge of small volume (0.5 cm3). The atmospheric pressure plasma (APP) device can be operated with helium, argon or a mixture of both. Equivalent electrical models of the self-resonant drive circuits and discharge are developed and used to estimate the plasma impedance, plasma power density, current density or electron number density of three APP devices. These parameters and the kinetic gas temperature are dependent on the self-resonant frequency of the APP device. For a fixed switching frequency and APP device geometry, the plasma parameters are controlled by adjusting the dc voltage at the primary coil and the gas flow rate. The resonant frequency is controlled by the selection of the switching power transistor and means of step-up voltage transformation (ferrite core, flyback transformer, or Tesla coil). The flyback transformer operates in the tens of kHz, the ferrite core in the hundreds of kHz and Tesla coil in the MHz range. Embedded within this work is the principle of frequency pulling which is exemplified in the flyback transformer circuit that utilizes a pickup coil for feedback control of the switching frequency.

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Integrated circuits for accurate linear analogue electric signal processing

NASA Astrophysics Data System (ADS)

Huijsing, J. H.

1981-11-01

The main lines in the design of integrated circuits for accurate analog linear electric signal processing in a frequency range including DC are investigated. A categorization of universal active electronic devices is presented on the basis of the connections of one of the terminals of the input and output ports to the common ground potential. The means for quantifying the attributes of four types of universal active electronic devices are included. The design of integrated operational voltage amplifiers (OVA) is discussed. Several important applications in the field of general instrumentation are numerically evaluated, and the design of operatinal floating amplifiers is presented.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

2004-01-01

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

A Survey of Power Electronics Applications in Aerospace Technologies

NASA Technical Reports Server (NTRS)

Kankam, M. David; Elbuluk, Malik E.

2001-01-01

The insertion of power electronics in aerospace technologies is becoming widespread. The application of semiconductor devices and electronic converters, as summarized in this paper, includes the International Space Station, satellite power system, and motor drives in 'more electric' technology applied to aircraft, starter/generators and reusable launch vehicles. Flywheels, servo systems embodying electromechanical actuation, and spacecraft on-board electric propulsion are discussed. Continued inroad by power electronics depends on resolving incompatibility of using variable frequency for 400 Hz-operated aircraft equipment. Dual-use electronic modules should reduce system development cost.

Nonlinear excitation of long-wavelength modes in Hall plasmas

NASA Astrophysics Data System (ADS)

Lakhin, V. P.; Ilgisonis, V. I.; Smolyakov, A. I.; Sorokina, E. A.

2016-10-01

Hall plasmas with magnetized electrons and unmagnetized ions exhibit a wide range of small scale fluctuations in the lower-hybrid frequency range as well as low-frequency large scale modes. Modulational instability of lower-hybrid frequency modes is investigated in this work for typical conditions in Hall plasma devices such as magnetrons and Hall thrusters. In these conditions, the dispersion of the waves in the lower-hybrid frequency range propagating perpendicular to the external magnetic field is due to the gradients of the magnetic field and the plasma density. It is shown that such lower-hybrid modes are unstable with respect to the secondary instability of the large scale quasimode perturbations. It is suggested that the large scale slow coherent modes observed in a number of Hall plasma devices may be explained as a result of such secondary instabilities.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

An ocean kinetic energy converter for low-power applications using piezoelectric disk elements

NASA Astrophysics Data System (ADS)

Viñolo, C.; Toma, D.; Mànuel, A.; del Rio, J.

2013-09-01

The main problem facing long-term electronic system deployments in the sea, is to find a feasible way to supply them with the power they require. Harvesting mechanical energy from the ocean wave oscillations and converting it into electrical energy, provides an alternative method for creating self-contained power sources. However, the very low and varying frequency of ocean waves, which generally varies from 0.1 Hz to 2 Hz, presents a hurdle which has to be overcome if this mechanical energy is to be harvested. In this paper, a new sea wave kinetic energy converter is described using low-cost disk piezoelectric elements, which has no dependence on their excitement frequency, to feed low-consumption maritime-deployed electronic devices. The operating principles of the piezoelectric device technique are presented, including analytical formulations describing the transfer of energy. Finally, a prototypical design, which generates electrical energy from the motion of a buoy, is introduced. The paper concludes with the the behavior study of the piezoelectric prototype device as a power generator.

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

Direct mapping of electrical noise sources in molecular wire-based devices

PubMed Central

Cho, Duckhyung; Lee, Hyungwoo; Shekhar, Shashank; Yang, Myungjae; Park, Jae Yeol; Hong, Seunghun

2017-01-01

We report a noise mapping strategy for the reliable identification and analysis of noise sources in molecular wire junctions. Here, different molecular wires were patterned on a gold substrate, and the current-noise map on the pattern was measured and analyzed, enabling the quantitative study of noise sources in the patterned molecular wires. The frequency spectra of the noise from the molecular wire junctions exhibited characteristic 1/f2 behavior, which was used to identify the electrical signals from molecular wires. This method was applied to analyze the molecular junctions comprising various thiol molecules on a gold substrate, revealing that the noise in the junctions mainly came from the fluctuation of the thiol bonds. Furthermore, we quantitatively compared the frequencies of such bond fluctuations in different molecular wire junctions and identified molecular wires with lower electrical noise, which can provide critical information for designing low-noise molecular electronic devices. Our method provides valuable insights regarding noise phenomena in molecular wires and can be a powerful tool for the development of molecular electronic devices. PMID:28233821

Direct mapping of electrical noise sources in molecular wire-based devices

NASA Astrophysics Data System (ADS)

Cho, Duckhyung; Lee, Hyungwoo; Shekhar, Shashank; Yang, Myungjae; Park, Jae Yeol; Hong, Seunghun

2017-02-01

We report a noise mapping strategy for the reliable identification and analysis of noise sources in molecular wire junctions. Here, different molecular wires were patterned on a gold substrate, and the current-noise map on the pattern was measured and analyzed, enabling the quantitative study of noise sources in the patterned molecular wires. The frequency spectra of the noise from the molecular wire junctions exhibited characteristic 1/f2 behavior, which was used to identify the electrical signals from molecular wires. This method was applied to analyze the molecular junctions comprising various thiol molecules on a gold substrate, revealing that the noise in the junctions mainly came from the fluctuation of the thiol bonds. Furthermore, we quantitatively compared the frequencies of such bond fluctuations in different molecular wire junctions and identified molecular wires with lower electrical noise, which can provide critical information for designing low-noise molecular electronic devices. Our method provides valuable insights regarding noise phenomena in molecular wires and can be a powerful tool for the development of molecular electronic devices.

Fully kinetic simulations of dense plasma focus Z-pinch devices.

PubMed

Schmidt, A; Tang, V; Welch, D

2012-11-16

Dense plasma focus Z-pinch devices are sources of copious high energy electrons and ions, x rays, and neutrons. The mechanisms through which these physically simple devices generate such high-energy beams in a relatively short distance are not fully understood. We now have, for the first time, demonstrated a capability to model these plasmas fully kinetically, allowing us to simulate the pinch process at the particle scale. We present here the results of the initial kinetic simulations, which reproduce experimental neutron yields (~10(7)) and high-energy (MeV) beams for the first time. We compare our fluid, hybrid (kinetic ions and fluid electrons), and fully kinetic simulations. Fluid simulations predict no neutrons and do not allow for nonthermal ions, while hybrid simulations underpredict neutron yield by ~100x and exhibit an ion tail that does not exceed 200 keV. Only fully kinetic simulations predict MeV-energy ions and experimental neutron yields. A frequency analysis in a fully kinetic simulation shows plasma fluctuations near the lower hybrid frequency, possibly implicating lower hybrid drift instability as a contributor to anomalous resistivity in the plasma.

Photoconductive circuit element reflectometer

DOEpatents

Rauscher, Christen

1990-01-01

A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

Photoconductive circuit element reflectometer

DOEpatents

Rauscher, C.

1987-12-07

A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a determinable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line. 4 figs.

Electronic frequency tuning of the acousto-optic mode-locking device of a laser

NASA Astrophysics Data System (ADS)

Magdich, L. N.; Balakshy, V. I.; Mantsevich, S. N.

2017-11-01

The effect of the electronic tuning of the acoustic resonances in an acousto-optic mode-locking device of a laser is investigated theoretically and experimentally. The problem of the excitation of a Fabry-Perot acoustic resonator by a plate-like piezoelectric transducer (PET) is solved in the approximation of plane acoustic waves taking into consideration the actual parameters of an RF generator and the elements for matching the PET to the generator. Resonances are tuned by changing the matching inductance that was connected in parallel to the transducer of the acousto-optic cell. The cell used in the experiment was manufactured from fused silica and included a lithium niobate PET. Changes in the matching inductance in the range of 0.025 to 0.2 μH provided the acoustic-resonance frequency tuning by 0.19 MHz, which exceeds the acoustic- resonance half-width.

Superconducting hot electron bolometers for terahertz sensing

NASA Astrophysics Data System (ADS)

Reese, Matthew Owen

Superconducting Hot Electron Bolometers (HEBs) are good candidates for detecting weak signals in the submillimeter or terahertz range. In this thesis work, a novel fabrication method was developed to make two types of niobium HEBs for different applications. HEBs were designed, fabricated, and then characterized at dc, microwave, and THz frequencies. The first type is a diffusion-cooled HEB, made with a short bridge that determines its cooling time. In this thesis, bridges were typically 400 nm long with bandwidths of about 1 GHz. These diffusion-cooled HEBs were developed as part of a collaboration with the University of Arizona (UA), to develop a proof-of-concept heterodyne array submillimeter camera. Devices were fabricated on thin fused quartz and silica substrates for waveguide coupling in the UA system for the astrophysically interesting 345 and 810 GHz atmospheric windows. The goal of this collaboration is to provide a basis of comparison between Nb diffusion-cooled HEB mixers and superconductorinsulator-superconductor mixers at these frequencies. The second type is a phonon-cooled HEB, made with a ˜3 mum long bridge. Its thermal response is dictated by the electron-phonon relaxation time. These devices were developed in collaboration with Prof. C. Schmuttenmaer's lab in the Yale Chemistry department, Prof. G. Blake at Caltech, and Dr. J. Pearson at the Jet Propulsion Laboratory. These devices were developed for use in quasi-optic systems to be used as fast (>100 MHz) direct detectors that can view room temperature sources without saturating. A variety of experimental applications are envisioned for these detectors including charge transport measurements of novel materials. A series of dc and microwave measurements were performed on the diffusion-cooled devices. A better understanding of the resistance vs. temperature profile was realized, including what design/fabrication parameters affect it and insight into how it affects device performance. This led to a do screening process that can identify good quality devices. The Nb phonon-cooled HEBs studied in this thesis were fully carried through the design, fabrication, and characterization process at dc, microwave and THz frequencies. The saturation power, responsivity, thermal response time, and noise performance were all measured to be within the expected range predicted by the initial design parameters.

SQUID magnetometers for low-frequency applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryhaenen, T.; Seppae, H.; Ilmoniemi, R.

1989-09-01

The authors present a novel formulation for SQUID operation, which enables them to evaluate and compare the sensitivity and applicability of different devices. SQUID magnetometers for low-frequency applications are analyzed, taking into account the coupling circuits and electronics. They discuss nonhysteretic and hysteretic single-junction rf SQUIDs, but the main emphasis is on the dynamics, sensitivity, and coupling considerations of dc-SQUID magnetometers. A short review of current ideas on thin-film, dc-SQUID design presents the problems in coupling and the basic limits of sensitivity. The fabrication technology of tunnel-junction devices is discussed with emphasis on how it limits critical current densities, specificmore » capacitances of junctions, minimum linewidths, conductor separations, etc. Properties of high-temperature superconductors are evaluated on the basis of recently published results on increased flux creep, low density of current carriers, and problems in fabricating reliable junctions. The optimization of electronics for different types of SQUIDs is presented. Finally, the most important low-frequency applications of SQUIDs in biomagnetism, metrology, geomagnetism, and some physics experiments demonstrate the various possibilities that state-of-the-art SQUIDs can provide.« less

Model analysis and electrical characterization of atmospheric pressure cold plasma jet in pin electrode configuration

NASA Astrophysics Data System (ADS)

Deepak, G. Divya; Joshi, N. K.; Prakash, Ram

2018-05-01

In this study, both model analysis and electrical characterization of a dielectric barrier discharge based argon plasma jet have been carried at atmospheric pressure in a pin electrode configuration. The plasma and fluid dynamics modules of COMSOL multi-physics code have been used for the modeling of the plasma jet. The plasma parameters, such as, electron density, electron temperature and electrical potential have been analyzed with respect to the electrical parameters, i.e., supply voltage and supply frequency with and without the flow of gas. In all the experiments, gas flow rate has been kept constant at 1 liter per minute. This electrode configuration is subjected to a range of supply frequencies (10-25 kHz) and supply voltages (3.5-6.5 kV). The power consumed by the device has been estimated at different applied combinations (supply voltage & frequency) for optimum power consumption at maximum jet length. The maximum power consumed by the device in this configuration for maximum jet length of ˜26 mm is just ˜1 W.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device engineers to choose the appropriate metal electrodes considering the chemical interactions at the interface. Additionally, the calculations performed on the interfaces provided valuable insight into binding energies, charge redistribution, change in the energy levels, dipole formation, etc., which are important parameters to consider while fabricating an electronic device. The research described in this dissertation highlights the application of unique computational modeling methods at different levels of theory to guide the experimental chemists and device engineers toward a rational design of transition metal based electronic devices with low cost and high performance.

High-speed electronic beam steering using injection locking of a laser-diode array

NASA Astrophysics Data System (ADS)

Swanson, E. A.; Abbas, G. L.; Yang, S.; Chan, V. W. S.; Fujimoto, J. G.

1987-01-01

High-speed electronic steering of the output beam of a 10-stripe laser-diode array is reported. The array was injection locked to a single-frequency laser diode. High-speed steering of the locked 0.5-deg-wide far-field lobe is demonstrated either by modulating the injection current of the array or by modulating the frequency of the master laser. Closed-loop tracking bandwidths of 70 kHz and 3 MHz, respectively, were obtained. The beam-steering bandwidths are limited by the FM responses of the modulated devices for both techniques.

Two-dimensional numerical model for the high electron mobility transistor

NASA Astrophysics Data System (ADS)

Loret, Dany

1987-11-01

A two-dimensional numerical drift-diffusion model for the High Electron Mobility Transistor (HEMT) is presented. Special attention is paid to the modeling of the current flow over the heterojunction. A finite difference scheme is used to solve the equations, and a variable mesh spacing was implemented to cope with the strong variations of functions near the heterojunction. Simulation results are compared to experimental data for a 0.7 μm gate length device. Small-signal transconductances and cut-off frequency obtained from the 2-D model agree well with the experimental values from S-parameter measurements. It is shown that the numerical models give good insight into device behaviour, including important parasitic effects such as electron injection into the bulk GaAs.

Body Implanted Medical Device Communications

NASA Astrophysics Data System (ADS)

Yazdandoost, Kamya Yekeh; Kohno, Ryuji

The medical care day by day and more and more is associated with and reliant upon concepts and advances of electronics and electromagnetics. Numerous medical devices are implanted in the body for medical use. Tissue implanted devices are of great interest for wireless medical applications due to the promising of different clinical usage to promote a patient independence. It can be used in hospitals, health care facilities and home to transmit patient measurement data, such as pulse and respiration rates to a nearby receiver, permitting greater patient mobility and increased comfort. As this service permits remote monitoring of several patients simultaneously it could also potentially decrease health care costs. Advancement in radio frequency communications and miniaturization of bioelectronics are supporting medical implant applications. A central component of wireless implanted device is an antenna and there are several issues to consider when designing an in-body antenna, including power consumption, size, frequency, biocompatibility and the unique RF transmission challenges posed by the human body. The radiation characteristics of such devices are important in terms of both safety and performance. The implanted antenna and human body as a medium for wireless communication are discussed over Medical Implant Communications Service (MICS) band in the frequency range of 402-405MHz.

Gaming to improve vision: 21st century self-monitoring for patients with age-related macular degeneration.

PubMed

Razavi, Hessom; Baglin, Elizabeth; Sharangan, Pyrawy; Caruso, Emily; Tindill, Nicole; Griffin, Susan; Guymer, Robyn

2017-11-13

Improved vision self-monitoring tools are required for people at risk of neovascular complications from age related macular degeneration (AMD). to report the self-monitoring habits of participants with intermediate AMD using the Amsler grid chart, and the use of personal electronic devices and gameplay in this over 50 year old cohort. single-centre descriptive study carried out at the Centre for Eye Research (CERA), Melbourne, Australia. 140 participants over 50 years of age, with a diagnosis of intermediate AMD and best-corrected visual acuity (BCVA) of ≥6/12 in each eye. structured questionnaire survey of participants who were enrolled in natural history of AMD studies at CERA. frequency of vision self-monitoring using the Amsler grid chart, and frequency of general use of personal electronic devices and gameplay. Of 140 participants with mean age of 70.5 years, 83.6% used an Amsler grid chart, but only 39.3% used it once per week. Most participants (91.4%) used one or more personal electronic devices. Of these, over half (54.7%) played games on them, among whom 39% played games once a day. Of participants aged 50-69 years, 92% (95%CI 85.1-98.9) were willing to play a game to monitor their vision, compared to 78% (95%CI 69.0-87.0) of those aged 70 years and older (P < 0.05). a large proportion of AMD patients already use personal electronic devices. Gamification techniques are likely to increase compliance with self-monitoring, leading to earlier detection in the next generation of patients with neovascular AMD. © 2017 Royal Australian and New Zealand College of Ophthalmologists.

Development and study of charge sensors for fast charge detection in quantum dots

NASA Astrophysics Data System (ADS)

Thalakulam, Madhu

Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity. We have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime. A study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.

Large-Area Permanent-Magnet ECR Plasma Source

NASA Technical Reports Server (NTRS)

Foster, John E.

2007-01-01

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Interference with the operation of medical devices resulting from the use of radio frequency identification technology.

PubMed

Houliston, Bryan; Parry, David; Webster, Craig S; Merry, Alan F

2009-06-19

To replicate electromagnetic interference (EMI) with a common drug infusion device resulting from the use of radio frequency identification (RFID) technology in a simulated operating theatre environment. An infusion pump, of a type previously reported as having failed due to RFID EMI, was placed in radio frequency (RF) fields of various strengths, and its operation observed. Different strength RF fields were created by varying the number of RFID readers, the use of a high-gain RFID antenna, the distance between the reader(s) and the infusion pump, and the presence of an RFID tag on the infusion pump. The infusion pump was not affected by low-power RFID readers, even when in direct contact. The pump was disrupted by a high-power reader at 10 cm distance when an RFID tag was attached, and by a combination of high-power and low-power readers at 10 cm distance. Electronic medical devices may fail in the presence of high-power RFID readers, especially if the device is tagged. However, low-power RFID readers appear to be safer.

Cosmological flux noise and measured noise power spectra in SQUIDs

PubMed Central

Beck, Christian

2016-01-01

The understanding of the origin of 1/f magnetic flux noise commonly observed in superconducting devices such as SQUIDs and qubits is still a major unsolved puzzle. Here we discuss the possibility that a significant part of the observed low-frequency flux noise measured in these devices is ultimately seeded by cosmological fluctuations. We consider a theory where a primordial flux noise field left over in unchanged form from an early inflationary or quantum gravity epoch of the universe intrinsically influences the phase difference in SQUIDs and qubits. The perturbation seeds generated by this field can explain in a quantitatively correct way the form and amplitude of measured low-frequency flux noise spectra in SQUID devices if one takes as a source of fluctuations the primordial power spectrum of curvature fluctuations as measured by the Planck collaboration. Our theoretical predictions are in excellent agreement with recent low-frequency flux noise measurements of various experimental groups. Magnetic flux noise, so far mainly considered as a nuisance for electronic devices, may thus contain valuable information about fluctuation spectra in the very early universe. PMID:27320418

Cosmological flux noise and measured noise power spectra in SQUIDs.

PubMed

Beck, Christian

2016-06-20

The understanding of the origin of 1/f magnetic flux noise commonly observed in superconducting devices such as SQUIDs and qubits is still a major unsolved puzzle. Here we discuss the possibility that a significant part of the observed low-frequency flux noise measured in these devices is ultimately seeded by cosmological fluctuations. We consider a theory where a primordial flux noise field left over in unchanged form from an early inflationary or quantum gravity epoch of the universe intrinsically influences the phase difference in SQUIDs and qubits. The perturbation seeds generated by this field can explain in a quantitatively correct way the form and amplitude of measured low-frequency flux noise spectra in SQUID devices if one takes as a source of fluctuations the primordial power spectrum of curvature fluctuations as measured by the Planck collaboration. Our theoretical predictions are in excellent agreement with recent low-frequency flux noise measurements of various experimental groups. Magnetic flux noise, so far mainly considered as a nuisance for electronic devices, may thus contain valuable information about fluctuation spectra in the very early universe.

Theoretical and experimental investigation of millimeter-wave TED's in cross-waveguide oscillators

NASA Astrophysics Data System (ADS)

Rydberg, A.

1985-07-01

Theoretical and experimental investigations of millimeterwave GaAs second harmonic transferred electron device (TED) oscillators using separate circuits for frequency and power optimization, are described. The theory predicts the oscillation frequency with less than 2 percent error for the second harmonic. Apart from the 2d and 3d, a 4th harmonic from the TED was observed up to 130 GHz.

Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

2016-12-01

Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

Consumers' Use of Personal Electronic Devices in the Kitchen.

PubMed

Lando, Amy M; Bazaco, Michael C; Chen, Yi

2018-02-23

Smartphones, tablets, and other personal electronic devices have become ubiquitous in Americans' daily lives. These devices are used by people throughout the day, including while preparing food. For example, a device may be used to look at recipes and therefore be touched multiple times during food preparation. Previous research has indicated that cell phones can harbor bacteria, including opportunistic human pathogens such as Staphylococcus and Klebsiella spp. This investigation was conducted with data from the 2016 Food Safety Survey (FSS) and from subsequent focus groups to determine the frequency with which consumers use personal electronic devices in the kitchen while preparing food, the types of devices used, and hand washing behaviors after handling these devices. The 2016 FSS is the seventh wave of a repeated cross-sectional survey conducted by the U.S. Food and Drug Administration in collaboration with the U.S. Department of Agriculture. The goal of the FSS is to evaluate U.S. adult consumer attitudes, behaviors, and knowledge about food safety. The FSS included 4,169 adults that were contacted using a dual-frame (land line and cell phone interviews) random-digit-dial sampling process. The personal electronics module was the first of three food safety topics discussed by each of eight consumer focus groups, which were convened in four U.S. cities in fall 2016. Results from the 2016 FSS revealed that of those individuals who use personal electronic devices while cooking, only about one third reported washing hands after touching the device and before continuing cooking. This proportion is significantly lower than that for self-reported hand washing behaviors after touching risky food products such as raw eggs, meat, chicken, or fish. Results from the focus groups highlight the varied usage of these devices during food preparation and the related strategies consumers are using to incorporate personal electric devices into their cooking routines.

Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Han-Chun; Ye, Tianyu; Mani, R. G.

2015-02-14

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

Resonant tunneling diode oscillators for optical communications

NASA Astrophysics Data System (ADS)

Watson, Scott; Zhang, Weikang; Wang, Jue; Al-Khalidi, Abdullah; Cantu, Horacio; Figueiredo, Jose; Wasige, Edward; Kelly, Anthony E.

2017-08-01

The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.

Characterization of ultrafast devices using novel optical techniques

NASA Astrophysics Data System (ADS)

Ali, Md Ershad

Optical techniques have been extensively used to examine the high frequency performance of a number of devices including High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Phototransistors (HPTs) and Low Temperature GaAs (LT-GaAs) Photoconductive Switches. To characterize devices, frequency and time domain techniques, namely optical heterodyning and electro-optic sampling, having measurement bandwidths in excess of 200 GHz, were employed. Optical mixing in three-terminal devices has been extended for the first time to submillimeter wave frequencies. Using a new generation of 50-nm gate pseudomorphic InP-based HEMTs, optically mixed signals were detected to 552 GHz with a signal-to-noise ratio of approximately 5 dB. To the best of our knowledge, this is the highest frequency optical mixing obtained in three- terminal devices to date. A novel harmonic three-wave detection scheme was used for the detection of the optically generated signals. The technique involved downconversion of the signal in the device by the second harmonic of a gate-injected millimeter wave local oscillator. Measurements were also conducted up to 212 GHz using direct optical mixing and up to 382 GHz using a fundamental three-wave detection scheme. New interesting features in the bias dependence of the optically mixed signals have been reported. An exciting novel development from this work is the successful integration of near-field optics with optical heterodyning. The technique, called near-field optical heterodyning (NFOH), allows for extremely localized injection of high-frequency stimulus to any arbitrary point of an ultrafast device or circuit. Scanning the point of injection across the sample provides details of the high frequency operation of the device with high spatial resolution. For the implementation of the technique, fiber-optic probes with 100 nm apertures were fabricated. A feedback controlled positioning system was built for accurate placement and scanning of the fiber probe with nanometric precision. The applicability of the NFOH technique was first confirmed by measurements on heterojunction phototransistors at 100 GHz. Later NFOH scans were performed at 63 GHz on two other important devices, HEMTs and LT-GaAs Photoconductive Switches. Spatially resolved response characteristics of these devices revealed interesting details of their operation.

Large amplitude m=1 diocotron mode measurements in the Electron Diffusion Gauge experiment

NASA Astrophysics Data System (ADS)

Jenkins, Thomas G.; Morrison, Kyle A.; Davidson, Ronald C.; Paul, Stephen F.

2002-01-01

Smaller-diameter pure electron plasmas are generated in the Electron Diffusion Gauge (EDG) using a thoriated tungsten filament wound into a spiral shape with an outer diameter which is 1/4 of the trap wall diameter. The m=1 diocotron mode is excited in the plasma by means of the resistive-wall instability, using a resistor-relay circuit which allows the mode to be induced at various initial amplitudes. The dynamics of this mode may be predicted using linear theory when the amplitude is small. However, it has been observed [e.g., Fine et al., Phys. Rev. Lett. 63, 2232 (1989)] [1] that at larger amplitudes the frequency of this mode (relative to the small-amplitude frequency) exhibits a quadratic dependence on the mode amplitude. In this paper, the frequency shift and nonlinear dynamics of the m=1 diocotron mode in the EDG device are investigated.

External amplitude and frequency modulation of a terahertz quantum cascade laser using metamaterial/graphene devices.

PubMed

Kindness, S J; Jessop, D S; Wei, B; Wallis, R; Kamboj, V S; Xiao, L; Ren, Y; Braeuninger-Weimer, P; Aria, A I; Hofmann, S; Beere, H E; Ritchie, D A; Degl'Innocenti, R

2017-08-09

Active control of the amplitude and frequency of terahertz sources is an essential prerequisite for exploiting a myriad of terahertz applications in imaging, spectroscopy, and communications. Here we present a optoelectronic, external modulation technique applied to a terahertz quantum cascade laser which holds the promise of addressing a number of important challenges in this research area. A hybrid metamaterial/graphene device is implemented into an external cavity set-up allowing for optoelectronic tuning of feedback into a quantum cascade laser. We demonstrate powerful, all-electronic, control over the amplitude and frequency of the laser output. Full laser switching is performed by electrostatic gating of the metamaterial/graphene device, demonstrating a modulation depth of 100%. External control of the emission spectrum is also achieved, highlighting the flexibility of this feedback method. By taking advantage of the frequency dispersive reflectivity of the metamaterial array, different modes of the QCL output are selectively suppressed using lithographic tuning and single mode operation of the multi-mode laser is enforced. Side mode suppression is electrically modulated from ~6 dB to ~21 dB, demonstrating active, optoelectronic modulation of the laser frequency content between multi-mode and single mode operation.

Effect of Y2O3 on polyindole for high frequency capacitor application

NASA Astrophysics Data System (ADS)

Maji, P.; Choudhary, R. B.; Majhi, M.

2017-05-01

Polyindole-Yittrium Oxide (PIn-Y2O3) composite was synthesized in the laboratory through chemical polymerization process. The structural and morphological studies of PIn-Y2O3 composite were investigated using X-ray diffraction (XRD) and scanning electron microscopic (SEM) techniques. These studies showed that PIn-Y2O3 composite was amorphous in nature and formed with spherical granule shape. The dielectric response was measured through LCR meter in the frequency range from 100 Hz to 1 MHz. The dielectric studies revealed that incorporation of Y2O3 into polymeric matrix improved the dielectric behavior of PIn polymer and markedly suitable for its application in high frequency capacitor and many other electronic devices.

Effect of 100 MeV Si7+ ions' irradiation on Pd/n-GaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Sinha, O. P.

2017-12-01

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100 MeV Si7+ ions for the varying fluence of 1012-1013 ions/cm2. The devices have been characterized by I-V and C-V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C-V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I-V and C-V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps' level to cause strong frequency dependence behavior.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics.

PubMed

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-16

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

NASA Astrophysics Data System (ADS)

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

PubMed Central

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-01-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications. PMID:28508862

Safety considerations for wireless delivery of continuous power to implanted medical devices.

PubMed

Lucke, Lori; Bluvshtein, Vlad

2014-01-01

Wireless power systems for use with implants are referred to as transcutaneous energy transmission systems (TETS) and consist of an implanted secondary coil and an external primary coil along with supporting electronics. A TETS system could be used to power ventricular assist systems and eliminate driveline infections. There are both direct and indirect safety concerns that must be addressed when continuously transferring power through the skin. Direct safety concerns include thermal tissue damage caused by exposure to the electromagnetic fields, coil heating effects, and potential unwanted nerve stimulation. Indirect concerns are those caused by potential interference of the TETS system with other implanted devices. Wireless power systems are trending towards higher frequency operation. Understanding the limits for safe operation of a TETS system across a range of frequencies is important. A low frequency and a high frequency implementation are simulated to demonstrate the impact of this trend for a VAD application.

A Dimensionally Aligned Signal Projection for Classification of Unintended Radiated Emissions

DOE PAGES

Vann, Jason Michael; Karnowski, Thomas P.; Kerekes, Ryan; ...

2017-04-24

Characterization of unintended radiated emissions (URE) from electronic devices plays an important role in many research areas from electromagnetic interference to nonintrusive load monitoring to information system security. URE can provide insights for applications ranging from load disaggregation and energy efficiency to condition-based maintenance of equipment-based upon detected fault conditions. URE characterization often requires subject matter expertise to tailor transforms and feature extractors for the specific electrical devices of interest. We present a novel approach, named dimensionally aligned signal projection (DASP), for projecting aligned signal characteristics that are inherent to the physical implementation of many commercial electronic devices. These projectionsmore » minimize the need for an intimate understanding of the underlying physical circuitry and significantly reduce the number of features required for signal classification. We present three possible DASP algorithms that leverage frequency harmonics, modulation alignments, and frequency peak spacings, along with a two-dimensional image manipulation method for statistical feature extraction. To demonstrate the ability of DASP to generate relevant features from URE, we measured the conducted URE from 14 residential electronic devices using a 2 MS/s collection system. Furthermore, a linear discriminant analysis classifier was trained using DASP generated features and was blind tested resulting in a greater than 90% classification accuracy for each of the DASP algorithms and an accuracy of 99.1% when DASP features are used in combination. Furthermore, we show that a rank reduced feature set of the combined DASP algorithms provides a 98.9% classification accuracy with only three features and outperforms a set of spectral features in terms of general classification as well as applicability across a broad number of devices.« less

A Dimensionally Aligned Signal Projection for Classification of Unintended Radiated Emissions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vann, Jason Michael; Karnowski, Thomas P.; Kerekes, Ryan

Characterization of unintended radiated emissions (URE) from electronic devices plays an important role in many research areas from electromagnetic interference to nonintrusive load monitoring to information system security. URE can provide insights for applications ranging from load disaggregation and energy efficiency to condition-based maintenance of equipment-based upon detected fault conditions. URE characterization often requires subject matter expertise to tailor transforms and feature extractors for the specific electrical devices of interest. We present a novel approach, named dimensionally aligned signal projection (DASP), for projecting aligned signal characteristics that are inherent to the physical implementation of many commercial electronic devices. These projectionsmore » minimize the need for an intimate understanding of the underlying physical circuitry and significantly reduce the number of features required for signal classification. We present three possible DASP algorithms that leverage frequency harmonics, modulation alignments, and frequency peak spacings, along with a two-dimensional image manipulation method for statistical feature extraction. To demonstrate the ability of DASP to generate relevant features from URE, we measured the conducted URE from 14 residential electronic devices using a 2 MS/s collection system. Furthermore, a linear discriminant analysis classifier was trained using DASP generated features and was blind tested resulting in a greater than 90% classification accuracy for each of the DASP algorithms and an accuracy of 99.1% when DASP features are used in combination. Furthermore, we show that a rank reduced feature set of the combined DASP algorithms provides a 98.9% classification accuracy with only three features and outperforms a set of spectral features in terms of general classification as well as applicability across a broad number of devices.« less

Quantum ring with the Rashba spin-orbit interaction in the regime of strong light-matter coupling

NASA Astrophysics Data System (ADS)

Kozin, V. K.; Iorsh, I. V.; Kibis, O. V.; Shelykh, I. A.

2018-04-01

We developed the theory of electronic properties of semiconductor quantum rings with the Rashba spin-orbit interaction irradiated by an off-resonant high-frequency electromagnetic field (dressing field). Within the Floquet theory of periodically driven quantum systems, it is demonstrated that the dressing field drastically modifies all electronic characteristics of the rings, including spin-orbit coupling, effective electron mass, and optical response. In particular, the present effect paves the way to controlling the spin polarization of electrons with light in prospective ring-shaped spintronic devices.

Degradation of Bilayer Organic Light-Emitting Diodes Studied by Impedance Spectroscopy.

PubMed

Sato, Shuri; Takata, Masashi; Takada, Makoto; Naito, Hiroyoshi

2016-04-01

The degradation of bilayer organic light-emitting diodes (OLEDs) with a device structure of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) (hole transport layer) and tris-(8-hydroxyquinolate)aluminum (Alq3) (emissive layer and electron transport layer) has been studied by impedance spectroscopy and device simulation. Two modulus peaks are found in the modulus spectra of the OLEDs below the electroluminescence threshold. After aging of the OLEDs, the intensity of electroluminescence is degraded and the modulus peak due to the Alq3 layer is shifted to lower frequency, indicating that the resistance of the Alq3 layer is increased. Device simulation reveals that the increase in the resistance of the Alq3 layer is due to the decrease in the electron mobility in the Alq3 layer.

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk; Sun, Huarui; Uren, Michael J.

2015-05-25

Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line.more » However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.« less

Muscle contraction during electro-muscular incapacitation: A comparison between square-wave pulses and the TASER(®) X26 Electronic control device.

PubMed

Comeaux, James A; Jauchem, James R; Cox, D Duane; Crane, Carrie C; D'Andrea, John A

2011-01-01

Electronic control devices (including the Advanced TASER(®) X26 model produced by TASER International) incapacitate individuals by causing muscle contractions. To provide information relevant to development of future potential devices, effects of monophasic square waves with different parameters were compared with those of the X26 electronic control device, using two animal models (frogs and swine). Pulse power, electrical pulse charge, pulse duration, and pulse repetition frequency affected muscle contraction. There was no difference in the charge required, between the square waveform and the X26 waveform, to cause approximately the same muscle-contraction response (in terms of the strength-duration curve). Thus, on the basis of these initial studies, the detailed shape of a waveform may not be important in terms of generating electro-muscular incapacitation. More detailed studies, however, may be required to thoroughly test all potential waveforms to be considered for future use in ECDs. 2010 American Academy of Forensic Sciences. Published 2010. This article is a U.S. Government work and is in the public domain in the U.S.A.

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature.

Materials for bioresorbable radio frequency electronics.

PubMed

Hwang, Suk-Won; Huang, Xian; Seo, Jung-Hun; Song, Jun-Kyul; Kim, Stanley; Hage-Ali, Sami; Chung, Hyun-Joong; Tao, Hu; Omenetto, Fiorenzo G; Ma, Zhenqiang; Rogers, John A

2013-07-12

Materials, device designs and manufacturing approaches are presented for classes of RF electronic components that are capable of complete dissolution in water or biofluids. All individual passive/active components as well as system-level examples such as wireless RF energy harvesting circuits exploit active materials that are biocompatible. The results provide diverse building blocks for physically transient forms of electronics, of particular potential value in bioresorbable medical implants with wireless power transmission and communication capabilities. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates

NASA Astrophysics Data System (ADS)

Chen, Zhaohui

Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs). This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques. To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 kG, and ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe. This combination of properties qualifies these films for microwave device applications. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of mu-wave and mm-wave monolithic integrated circuits. In part two, high-rate reactive ion etching using CHF3/SF6 gas mixtures was successfully demonstrated on BaM films, resulting in high aspect profile features of less than 50 nm in lateral dimension. These demonstrations enable the future integration of ferrites into MIC devices and technologies.

Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering

DTIC Science & Technology

2016-09-01

Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy...Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy Sensors and Electron Devices...08/2016 4. TITLE AND SUBTITLE Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering 5a

Frequency-domain multiscale quantum mechanics/electromagnetics simulation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Lingyi; Yin, Zhenyu; Yam, ChiYung, E-mail: yamcy@yangtze.hku.hk, E-mail: ghc@everest.hku.hk

A frequency-domain quantum mechanics and electromagnetics (QM/EM) method is developed. Compared with the time-domain QM/EM method [Meng et al., J. Chem. Theory Comput. 8, 1190–1199 (2012)], the newly developed frequency-domain QM/EM method could effectively capture the dynamic properties of electronic devices over a broader range of operating frequencies. The system is divided into QM and EM regions and solved in a self-consistent manner via updating the boundary conditions at the QM and EM interface. The calculated potential distributions and current densities at the interface are taken as the boundary conditions for the QM and EM calculations, respectively, which facilitate themore » information exchange between the QM and EM calculations and ensure that the potential, charge, and current distributions are continuous across the QM/EM interface. Via Fourier transformation, the dynamic admittance calculated from the time-domain and frequency-domain QM/EM methods is compared for a carbon nanotube based molecular device.« less

Modeling of induction-linac based free-electron laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jong, R.A.; Fawley, W.M.; Scharlemann, E.T.

We describe the modeling of an induction-linac based free-electron laser (IFEL) amplifier for producing multimegawatt levels of microwave power. We have used the Lawrence Livermore National Laboratory (LLNL) free-electron laser simulation code, FRED, and the simulation code for sideband calculations, GINGER for this study. For IFEL amplifiers in the frequency range of interest (200 to 600 GHz), we have devised a wiggler design strategy which incorporates a tapering algorithm that is suitable for free-electron laser (FEL) systems with moderate space-charge effects and that minimizes spontaneous noise growth at frequencies below the fundamental, while enhancing the growth of the signal atmore » the fundamental. In addition, engineering design considerations of the waveguide wall loading and electron beam fill factor in the waveguide set limits on the waveguide dimensions, the wiggler magnet gap spacing, the wiggler period, and the minimum magnetic field strength in the tapered region of the wiggler. As an example, we shall describe an FEL amplifier designed to produce an average power of about 10 MW at a frequency of 280 GHz to be used for electron cyclotron resonance heating of tokamak fusion devices. 17 refs., 4 figs.« less

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperaturesmore » (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.« less

Robust Network Architecture Against Random Threats in WMD Environments: Theoretical Limits and Recovery Strategies

DTIC Science & Technology

2017-08-01

green energy sources such as the Photovoltaic (PV) and Wind Turbine (WT). All those devices are equipped with Intelligent Electronic Devices (IEDs...equivalent to the connectivity in the wired networks, which is used as a prerequisite to evaluate the functionality of the network applications. Moreover, a...using different access technologies, including wired and wireless, on licensed and unlicensed frequency bands. The objectives can be two-fold in general

High Current Density Scandate Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

of Technology HFSS Ansoft Corporation’s High Frequency Structure Simulator TWT Traveling Wave Tube - device for generating high levels of RF power ...cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a tungsten matrix impregnated with a mixture of barium oxide...electron beam with the largest possible diameter, consistent with high gain, bandwidth, and efficiency at W- Band . The research concentrated on photonic

The effect of coolants on the performance of magnetic micro-refrigerators.

PubMed

Silva, D J; Bordalo, B D; Pereira, A M; Ventura, J; Oliveira, J C R E; Araújo, J P

2014-06-01

Magnetic refrigeration is an alternative cooling technique with envisaged technological applications on micro- and opto-electronic devices. Here, we present a magnetic micro-refrigerator cooling device with embedded micro-channels and based on the magnetocaloric effect. We studied the influence of the coolant fluid in the refrigeration process by numerically simulating the heat transfer processes using the finite element method. This allowed us to calculate the cooling power of the device. Our results show that gallium is the most efficient coolant fluid and, when used with Gd5Si2Ge2, a maximum power of 11.2 W/mm3 at a working frequency of -5 kHz can be reached. However, for operation frequencies around 50 Hz, water is the most efficient fluid with a cooling power of 0.137 W/mm3.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

PubMed

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

Challenges in graphene integration for high-frequency electronics

NASA Astrophysics Data System (ADS)

Giannazzo, F.; Fisichella, G.; Greco, G.; Roccaforte, F.

2016-06-01

This paper provides an overview of the state-of-the-art research on graphene (Gr) for high-frequency (RF) devices. After discussing current limitations of lateral Gr RF transistors, novel vertical devices concepts such as the Gr Base Hot Electron Transistor (GBHET) will be introduced and the main challenges in Gr integration within these architectures will be discussed. In particular, a GBHET device based on Gr/AlGaN/GaN heterostructure will be considered. An approach to the fabrication of this heterostructure by transfer of CVD grown Gr on copper to the AlGaN surface will be presented. The morphological and electrical properties of this system have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (˜0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a GBHET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Modern Microwave and Millimeter-Wave Power Electronics

NASA Astrophysics Data System (ADS)

Barker, Robert J.; Luhmann, Neville C.; Booske, John H.; Nusinovich, Gregory S.

2005-04-01

A comprehensive study of microwave vacuum electronic devices and their current and future applications While both vacuum and solid-state electronics continue to evolve and provide unique solutions, emerging commercial and military applications that call for higher power and higher frequencies to accommodate massive volumes of transmitted data are the natural domain of vacuum electronics technology. Modern Microwave and Millimeter-Wave Power Electronics provides systems designers, engineers, and researchers-especially those with primarily solid-state training-with a thoroughly up-to-date survey of the rich field of microwave vacuum electronic device (MVED) technology. This book familiarizes the R&D and academic communities with the capabilities and limitations of MVED and highlights the exciting scientific breakthroughs of the past decade that are dramatically increasing the compactness, efficiency, cost-effectiveness, and reliability of this entire class of devices. This comprehensive text explores a wide range of topics: * Traveling-wave tubes, which form the backbone of satellite and airborne communications, as well as of military electronic countermeasures systems * Microfabricated MVEDs and advanced electron beam sources * Klystrons, gyro-amplifiers, and crossed-field devices * "Virtual prototyping" of MVEDs via advanced 3-D computational models * High-Power Microwave (HPM) sources * Next-generation microwave structures and circuits * How to achieve linear amplification * Advanced materials technologies for MVEDs * A Web site appendix providing a step-by-step walk-through of a typical MVED design process Concluding with an in-depth examination of emerging applications and future possibilities for MVEDs, Modern Microwave and Millimeter-Wave Power Electronics ensures that systems designers and engineers understand and utilize the significant potential of this mature, yet continually developing technology. SPECIAL NOTE: All of the editors' royalties realized from the sale of this book will fund the future research and publication activities of graduate students in the vacuum electronics field.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

Design and application of multimegawatt X -band deflectors for femtosecond electron beam diagnostics

DOE PAGES

Dolgashev, Valery A.; Bowden, Gordon; Ding, Yuantao; ...

2014-10-02

Performance of the x-ray free electron laser Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests (FACET) is determined by the properties of their extremely short electron bunches. Multi-GeV electron bunches in both LCLS and FACET are less than 100 fs long. Optimization of beam properties and understanding of free-electron laser operation require electron beam diagnostics with time resolution of about 10 fs. We designed, built and commissioned a set of high frequency X-band deflectors which can measure the beam longitudinal space charge distribution and slice energy spread to better than 10 fs resolution at fullmore » LCLS energy (14 GeV), and with 70 fs resolution at full FACET energy (20 GeV). Use of high frequency and high gradient in these devices allows them to reach unprecedented performance. We report on the physics motivation, design considerations, operational configuration, cold tests, and typical results of the X-band deflector systems currently in use at SLAC.« less

The Microfluidic Jukebox

NASA Astrophysics Data System (ADS)

Tan, Say Hwa; Maes, Florine; Semin, Benoît; Vrignon, Jérémy; Baret, Jean-Christophe

2014-04-01

Music is a form of art interweaving people of all walks of life. Through subtle changes in frequencies, a succession of musical notes forms a melody which is capable of mesmerizing the minds of people. With the advances in technology, we are now able to generate music electronically without relying solely on physical instruments. Here, we demonstrate a musical interpretation of droplet-based microfluidics as a form of novel electronic musical instruments. Using the interplay of electric field and hydrodynamics in microfluidic devices, well controlled frequency patterns corresponding to musical tracks are generated in real time. This high-speed modulation of droplet frequency (and therefore of droplet sizes) may also provide solutions that reconciles high-throughput droplet production and the control of individual droplet at production which is needed for many biochemical or material synthesis applications.

Extreme sensitivity of graphene photoconductivity to environmental gases.

PubMed

Docherty, Callum J; Lin, Cheng-Te; Joyce, Hannah J; Nicholas, Robin J; Herz, Laura M; Li, Lain-Jong; Johnston, Michael B

2012-01-01

Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Superconducting Hot-Electron Submillimeter-Wave Detector

NASA Technical Reports Server (NTRS)

Karasik, Boris; McGrath, William; Leduc, Henry

2009-01-01

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in order to make its heat capacity very small; this is the approach followed in developing the present device.

MM-wave cyclotron auto-resonance maser for plasma heating

NASA Astrophysics Data System (ADS)

Ceccuzzi, S.; Dattoli, G.; Di Palma, E.; Doria, A.; Gallerano, G. P.; Giovenale, E.; Mirizzi, F.; Spassovsky, I.; Ravera, G. L.; Surrenti, V.; Tuccillo, A. A.

2014-02-01

Heating and Current Drive systems are of outstanding relevance in fusion plasmas, magnetically confined in tokamak devices, as they provide the tools to reach, sustain and control burning conditions. Heating systems based on the electron cyclotron resonance (ECRH) have been extensively exploited on past and present machines DEMO, and the future reactor will require high frequencies. Therefore, high power (≥1MW) RF sources with output frequency in the 200 - 300 GHz range would be necessary. A promising source is the so called Cyclotron Auto-Resonance Maser (CARM). Preliminary results of the conceptual design of a CARM device for plasma heating, carried out at ENEA-Frascati will be presented together with the planned R&D development.

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Design and construction of the artificial patient module for testing bioimpedance measuring devices

NASA Astrophysics Data System (ADS)

Młyńczak, Marcel; Pariaszewska, Katarzyna; Niewiadomski, Wiktor; Cybulski, Gerard

2013-10-01

The purpose of this study was to describe the design of the electronic module for testing bioimpedance measuring devices, for example impedance cardiographs or impedance pneumographs. Artificial Patient was conceived as an electronic equivalent of the impedance of skin-electrode interface and the impedance between electrodes - measured one. Different approaches in imitating a resistance of skin and an impedance of electrode-skin connection were presented. The module was adapted for frequently applied tetrapolar electrode configuration. Therefore the design do not enclose the elements simulating impedance between skin and receiver electrodes due to negligible effect of this impedance on the current flow through the receiver. The Artificial Patient enables testing either application generators, or receiver parts, particularly the level of noise and distortions of the signal. Use of digitally controlled potentiometer allows simulating different tissue resistances changes such as constant values, very-low-frequency and low-frequency changes corresponding to those caused by breathing or heart activity. Also it allows distorting signals in order to test algorithms of artifacts attenuation.

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Dose-current discharge correlation analysis in a Mather type Plasma Focus device for medical applications

NASA Astrophysics Data System (ADS)

Sumini, M.; Mostacci, D.; Tartari, A.; Mazza, A.; Cucchi, G.; Isolan, L.; Buontempo, F.; Zironi, I.; Castellani, G.

2017-11-01

In a Plasma Focus device the plasma collapses into the pinch where it reaches thermonuclear conditions for a few tens of nanoseconds, becoming a multi-radiation source. The nature of the radiation generated depends on the gas filling the chamber and the device working parameters. The self-collimated electron beam generated in the backward direction with respect to the plasma motion is one of the main radiation sources of interest also for medical applications. The electron beam may be guided against a high Z material target to produce an X-ray beam. This technique offers an ultra-high dose rate source of X-rays, able to deliver during the pinch a massive dose (up to 1 Gy per discharge for the PFMA-3 test device), as measured with EBT3 GafchromicⒸfilm tissue equivalent dosimeters. Given the stochastic behavior of the discharge process, a reliable on-line estimate of the dose-delivered is a very challenging task, in some way preventing a systematic application as a potentially interesting therapy device. This work presents an approach to linking the dose registered by the EBT3 GafchromicⒸfilms with the information contained in the signal recorded during the current discharge process. Processing the signal with the Wigner-Ville distribution, a spectrogram was obtained, displaying the information on intensity at various frequency scales, identifying the band of frequencies representative of the pinch events and define some patterns correlated with the dose.

MULTICHANNEL PULSE-HEIGHT ANALYZER

DOEpatents

Russell, J.T.; Lefevre, H.W.

1958-01-21

This patent deals with electronic computing circuits and more particularly to pulse-height analyzers used for classifying variable amplitude pulses into groups of different amplitudes. The device accomplishes this pulse allocation by by converting the pulses into frequencies corresponding to the amplitudes of the pulses, which frequencies are filtered in channels individually pretuned to a particular frequency and then detected and recorded in the responsive channel. This circuit substantially overcomes the disadvantages of prior annlyzers incorporating discriminators pre-set to respond to certain voltage levels, since small variation in component values is not as critical to satisfactory circuit operation.

One-Port Electronic Detection Strategies for Improving Sensitivity in Piezoelectric Resonant Sensor Measurements

PubMed Central

Hu, Zhongxu; Hedley, John; Keegan, Neil; Spoors, Julia; Gallacher, Barry; McNeil, Calum

2016-01-01

This paper describes a one-port mechanical resonance detection scheme utilized on a piezoelectric thin film driven silicon circular diaphragm resonator and discusses the limitations to such an approach in degenerate mode mass detection sensors. The sensor utilizes degenerated vibration modes of a radial symmetrical microstructure thereby providing both a sense and reference mode allowing for minimization of environmental effects on performance. The circular diaphragm resonator was fabricated with thickness of 4.5 µm and diameter of 140 µm. A PZT thin film of 0.75 µm was patterned on the top surface for the purposes of excitation and vibration sensing. The device showed a resonant frequency of 5.8 MHz for the (1, 1) mode. An electronic interface circuit was designed to cancel out the large static and parasitic capacitance allowing for electrical detection of the mechanical vibration thereby enabling the frequency split between the sense and reference mode to be measured accurately. The extracted motional current, proportional to the vibration velocity, was fed back to the drive to effectively increase the Q factor, and therefore device sensitivity, by more than a factor of 8. A software phase-locked loop was implemented to automatically track the resonant frequencies to allow for faster and accurate resonance detection. Results showed that by utilizing the absolute mode frequencies as an indication of sensor temperature, the variation in sensor temperature due to the heating from the drive electronics was accounted for and led to an ultimate measurement sensitivity of 2.3 Hz. PMID:27792154

Hydrogel ionotronics

NASA Astrophysics Data System (ADS)

Yang, Canhui; Suo, Zhigang

2018-06-01

An ionotronic device functions by a hybrid circuit of mobile ions and mobile electrons. Hydrogels are stretchable, transparent, ionic conductors that can transmit electrical signals of high frequency over long distance, enabling ionotronic devices such as artificial muscles, skins and axons. Moreover, ionotronic luminescent devices, ionotronic liquid crystal devices, touchpads, triboelectric generators, artificial eels and gel-elastomer-oil devices can be designed based on hydrogels. In this Review, we discuss first-generation hydrogel ionotronic devices and the challenges associated with the mechanical properties and the chemistry of the materials. We examine how strong and stretchable adhesion between hydrophilic and hydrophobic polymer networks can be achieved, how water can be retained in hydrogels and how to design hydrogels that resist fatigue under cyclic loads. Finally, we highlight applications of hydrogel ionotronic devices and discuss the future of the field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickett, Lyle; Manin, Julien; Eagle, Ethan

A Sandia National Laboratories' light emitting diode (LED) driver is generating light pulses with shorter duration higher repetition frequency and higher brightness than anything on the market. The Sandia LED Pulser uses custom electronic circuitry to drive high-power LEDs to generate short, bright, high frequency light pulses. A single device can emit up to four different colors - each with independent pulse timing - crucial for light-beam forming in many optical applications and is more economical than current light sources such as lasers.

Self-excited oscillation and monostable operation of a bistable light emitting diode (BILED)

NASA Astrophysics Data System (ADS)

Okumura, K.; Ogawa, Y.; Ito, H.; Inaba, H.

1983-07-01

A new simple opto-electronic bistable device has been obtained by combining a light emitting diode (LED) and a photodetector (PD) with electronic feedback using a broad bandpass filter. This has interesting dynamic characteristics which are expected to have such various applications as optical oscillators, optical pulse generators and optical pulsewidth modulators. The dynamic characteristics are represented by second-order nonlinear differential equations. In the analyses of these nonlinear systems, instead of numerical analyses with a computer, an approximate analytical method devised for this purpose has been used. This method has been used for investigating the characteristics of the proposed device quantitatively. These include the frequency of oscillations, pulsewidths and hysteresis. The results of the analyses agree approximately with experimentally observed values, thus the dynamic characteristics of the proposed device can be explained.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan

In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84%more » in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.« less

Photoinduced currents in metal-barrier-metal junctions

NASA Technical Reports Server (NTRS)

Guedes, M. P.; Gustafson, T. K.; Heiblum, M.; Siu, D. P.; Slayman, C. W.; Whinnery, J. R.; Yasuoka, Y.

1978-01-01

The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.

Recent progress in opto-electronic oscillator

NASA Technical Reports Server (NTRS)

Maleki, Lute

2005-01-01

The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

Magnetic-Field-Assisted Terahertz Quantum Cascade Laser Operating up to 225 K

NASA Technical Reports Server (NTRS)

Wade, A.; Fedorov, G.; Smirnov, D.; Kumar, S.; Williams, B. S.; Hu, Q.; Reno, J. L.

2008-01-01

Advances in semiconductor bandgap engineering have resulted in the recent development of the terahertz quantum cascade laser1. These compact optoelectronic devices now operate in the frequency range 1.2-5 THz, although cryogenic cooling is still required2.3. Further progress towards the realization of devices operating at higher temperatures and emitting at longer wavelengths (sub-terahertz quantum cascade lasers) is difficult because it requires maintaining a population inversion between closely spaced electronic sub-bands (1 THz approx. equals 4 meV). Here, we demonstrate a magnetic-field-assisted quantum cascade laser based on the resonant-phonon design. By applying appropriate electrical bias and strong magnetic fields above 16 T, it is possible to achieve laser emission from a single device over a wide range of frequencies (0.68-3.33 THz). Owing to the suppression of inter-landau-level non-radiative scattering, the device shows magnetic field assisted laser action at 1 THz at temperatures up to 215 K, and 3 THz lasing up to 225 K.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Binding configurations and intramolecular strain in single-molecule devices.

PubMed

Rascón-Ramos, Habid; Artés, Juan Manuel; Li, Yuanhui; Hihath, Joshua

2015-05-01

The development of molecular-scale electronic devices has made considerable progress over the past decade, and single-molecule transistors, diodes and wires have all been demonstrated. Despite this remarkable progress, the agreement between theoretically predicted conductance values and those measured experimentally remains limited. One of the primary reasons for these discrepancies lies in the difficulty to experimentally determine the contact geometry and binding configuration of a single-molecule junction. In this Article, we apply a small-amplitude, high-frequency, sinusoidal mechanical signal to a series of single-molecule devices during junction formation and breakdown. By measuring the current response at this frequency, it is possible to determine the most probable binding and contact configurations for the molecular junction at room temperature in solution, and to obtain information about how an applied strain is distributed within the molecular junction. These results provide insight into the complex configuration of single-molecule devices, and are in excellent agreement with previous predictions from theoretical models.

Invited Review Article: Methods for imaging weak-phase objects in electron microscopy

PubMed Central

Glaeser, Robert M.

2013-01-01

Contrast has traditionally been produced in electron-microscopy of weak phase objects by simply defocusing the objective lens. There now is renewed interest, however, in using devices that apply a uniform quarter-wave phase shift to the scattered electrons relative to the unscattered beam, or that generate in-focus image contrast in some other way. Renewed activity in making an electron-optical equivalent of the familiar “phase-contrast” light microscope is based in part on the improved possibilities that are now available for device microfabrication. There is also a better understanding that it is important to take full advantage of contrast that can be had at low spatial frequency when imaging large, macromolecular objects. In addition, a number of conceptually new phase-plate designs have been proposed, thus increasing the number of options that are available for development. The advantages, disadvantages, and current status of each of these options is now compared and contrasted. Experimental results that are, indeed, superior to what can be accomplished with defocus-based phase contrast have been obtained recently with two different designs of phase-contrast aperture. Nevertheless, extensive work also has shown that fabrication of such devices is inconsistent, and that their working lifetime is short. The main limitation, in fact, appears to be electrostatic charging of any device that is placed into the electron diffraction pattern. The challenge in fabricating phase plates that are practical to use for routine work in electron microscopy thus may be more in the area of materials science than in the area of electron optics. PMID:24289381

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Oxide-based synaptic transistors gated by solution-processed gelatin electrolytes

NASA Astrophysics Data System (ADS)

He, Yinke; Sun, Jia; Qian, Chuan; Kong, Ling-An; Gou, Guangyang; Li, Hongjian

2017-04-01

In human brain, a large number of neurons are connected via synapses. Simulation of the synaptic behaviors using electronic devices is the most important step for neuromorphic systems. In this paper, proton conducting gelatin electrolyte-gated oxide field-effect transistors (FETs) were used for emulating synaptic functions, in which the gate electrode is regarded as pre-synaptic neuron and the channel layer as the post-synaptic neuron. In analogy to the biological synapse, a potential spike can be applied at the gate electrode and trigger ionic motion in the gelatin electrolyte, which in turn generates excitatory post-synaptic current (EPSC) in the channel layer. Basic synaptic behaviors including spike time-dependent EPSC, paired-pulse facilitation (PPF), self-adaptation, and frequency-dependent synaptic transmission were successfully mimicked. Such ionic/electronic hybrid devices are beneficial for synaptic electronics and brain-inspired neuromorphic systems.

Electronically controlled rejections of spoof surface plasmons polaritons

NASA Astrophysics Data System (ADS)

Zhou, Yong Jin; Xiao, Qian Xun

2017-03-01

We have proposed and experimentally demonstrated a band-notched surface plasmonic filter, which is composed of an ultra-wide passband plasmonic filter with a simple C-shaped ring on the back of the substrate. Enhanced narrowband or broadband rejections of spoof surface plasmon polaritons (SPPs) can be achieved with double C-shaped rings in the propagation or transverse direction. By mounting active components across the slit cut in the C-shaped ring, dynamic control of rejection of spoof SPPs can be accomplished. Both the rejection of spoof SPPs and the rejection bandwidth can be controlled when the Schottky barrier diode is forward-biased or reverse-biased. The frequency spectrum of the rejection band can be electronically adjusted by tuning the applied bias voltage across the varactor diode. Both simulated and measured results agree well and demonstrate dynamic control of propagation of spoof SPPs at the microwave frequencies. Such electronically controllable devices could find more applications in advanced plasmonic integrated functional circuits in microwave and terahertz frequencies.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE PAGES

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; ...

2017-02-10

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Theory and simulation of ion noise in microwave tubes

NASA Astrophysics Data System (ADS)

Manheimer, W. M.; Freund, H. P.; Levush, B.; Antonsen, T. M.

2001-01-01

Since there is always some ambient gas in electron beam devices, background ionization is ubiquitous. For long pulse times, the electrostatic potentials associated with this ionization can reach significant levels and give rise to such observed phenomena as phase noise in microwave tubes. This noise is usually associated with the motion of ions in the device; therefore, it is called ion noise. It often manifests itself as a slow phase fluctuation on the output signal. Observations of noise in microwave tubes such as coupled-cavity traveling wave tubes (CC-TWTs) and klystrons have been discussed in the literature. In this paper, a hybrid model is discussed in which the electron beam is described by the beam envelope equation, and the ions generated by beam ionization are treated as discrete particles using the one-dimensional equations of motion. The theoretical model provides good qualitative as well as reasonable quantitative insight into the origin of ion noise phenomena. The numerical results indicate that the model reproduces the salient features of the phase oscillations observed experimentally. That is, the scaling of the frequency of the phase oscillations with gas pressure in the device and the sensitive dependence of the phase oscillations on the focusing magnetic field. Two distinct time scales are observed in simulation. The fastest time scale oscillation is related to the bounce motion of ions in the axial potential wells formed by the scalloping of the electron beam. Slower sawtooth oscillations are observed to correlate with the well-to-well interactions induced by the ion coupling to the electron equilibrium. These oscillations are also correlated with ion dumping to the cathode or collector. As a practical matter, simulations indicate that the low frequency oscillations can be reduced significantly by using a well-matched electron beam propagating from the electron gun into the interaction circuit.

Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yong, E-mail: liyong@pdsu.edu.cn; Song, Xiao Yan; Song, Yue Li

2016-02-15

Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic propertiesmore » of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.« less

Internet of "printed" Things: low-cost fabrication of autonomous sensing nodes by inkjet printing

NASA Astrophysics Data System (ADS)

Kawahara, Yoshihiro

2014-11-01

"What if electronics devices are printed using an inkjet printer even at home?" "What if those devices no longer need a battery?" I will introduce two enabling technologies for the Internet of Things concept. 1. Instant Inkjet Circuits: A low cost, fast and accessible technology to support the rapid prototyping of electronic devices. We demonstrated that "sintering-free" silver nano particle ink with a commodity inkjet printer can be used to fabricate printed circuit board and high-frequency applications such as antennas and sensors. The technology is now commercialized by AgIC, Inc. 2. Wireless Power: Although large amounts of data can be exchanged over a wireless communication link, mobile devices are still tethered by power cables. We are trying to solve this problem by two different approaches: energy harvesting. A simple circuitry comprised of diodes and capacitor can convert ambient radio signals into DC current. Our research revealed the signals from TV tower located 6.5km apart could be used to feed 100 microwatts to power microcontrollers.

Observation of millimeter-wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limits

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Le, H. Q.

1987-01-01

Recent observations of oscillation frequencies up to 56 GHz in resonant tunneling structures are discussed in relation to calculations by several authors of the ultimate frequency limits of these devices. It is found that calculations relying on the Wentzel-Kramers-Brillouin (WKB) approximation give limits well below the observed oscillation frequencies. Two other techniques for calculating the upper frequency limit were found to give more reasonable results. One method employs the solution of the time-dependent Schroedinger equation obtained by Kundrotas and Dargys (1986); the other uses the energy width of the transmission function for electrons through the double-barrier structure. This last technique is believed to be the most accurate since it is based on general results for the lifetime of any resonant state. It gives frequency limits on the order of 1 THz for two recently fabricated structures. It appears that the primary limitation of the oscillation frequency for double-barrier resonant-tunneling diodes is imposed by intrinsic device circuit parameters and by the transit time of the depletion layer rather than by time delays encountered in the double-barrier region.

Optically controlled dielectric properties of single-walled carbon nanotubes for terahertz wave applications.

PubMed

Smirnov, Serguei; Anoshkin, Ilya V; Demchenko, Petr; Gomon, Daniel; Lioubtchenko, Dmitri V; Khodzitsky, Mikhail; Oberhammer, Joachim

2018-06-21

Materials with tunable dielectric properties are valuable for a wide range of electronic devices, but are often lossy at terahertz frequencies. Here we experimentally report the tuning of the dielectric properties of single-walled carbon nanotubes under light illumination. The effect is demonstrated by measurements of impedance variations at low frequency as well as complex dielectric constant variations in the wide frequency range of 0.1-1 THz by time domain spectroscopy. We show that the dielectric constant is significantly modified for varying light intensities. The effect is also practically applied to phase shifters based on dielectric rod waveguides, loaded with carbon nanotube layers. The carbon nanotubes are used as tunable impedance surface controlled by light illumination, in the frequency range of 75-500 GHz. These results suggest that the effect of dielectric constant tuning with light, accompanied by low transmission losses of the carbon nanotube layer in such an ultra-wide band, may open up new directions for the design and fabrication of novel Terahertz and optoelectronic devices.

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

NASA Astrophysics Data System (ADS)

Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin

2015-02-01

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons.

A Molecular Electronic Transducer based Low-Frequency Accelerometer with Electrolyte Droplet Sensing Body

NASA Astrophysics Data System (ADS)

Liang, Mengbing

"Sensor Decade" has been labeled on the first decade of the 21st century. Similar to the revolution of micro-computer in 1980s, sensor R&D developed rapidly during the past 20 years. Hard workings were mainly made to minimize the size of devices with optimal the performance. Efforts to develop the small size devices are mainly concentrated around Micro-electro-mechanical-system (MEMS) technology. MEMS accelerometers are widely published and used in consumer electronics, such as smart phones, gaming consoles, anti-shake camera and vibration detectors. This study represents liquid-state low frequency micro-accelerometer based on molecular electronic transducer (MET), in which inertial mass is not the only but also the conversion of mechanical movement to electric current signal is the main utilization of the ionic liquid. With silicon-based planar micro-fabrication, the device uses a sub-micron liter electrolyte droplet sealed in oil as the sensing body and a MET electrode arrangement which is the anode-cathode-cathode-anode (ACCA) in parallel as the read-out sensing part. In order to sensing the movement of ionic liquid, an imposed electric potential was applied between the anode and the cathode. The electrode reaction, I3-- + 2e-- ↔ 3I --, occurs around the cathode which is reverse at the anodes. Obviously, the current magnitude varies with the concentration of ionic liquid, which will be effected by the movement of liquid droplet as the inertial mass. With such structure, the promising performance of the MET device design is to achieve 10.8 V/G (G=9.81 m/s2) sensitivity at 20 Hz with the bandwidth from 1 Hz to 50 Hz, and a low noise floor of 100 microg/sqrt(Hz) at 20 Hz.

The Direct Digital Modulation of Traveling Wave Tubes

NASA Technical Reports Server (NTRS)

Radhamohan, Ranjan S.

2004-01-01

Traveling wave tube (TWT) technology, first described by Rudolf Kompfner in the early 1940s, has been a key component of space missions from the earliest communication satellites in the 1960s to the Cassini probe today. TWTs are essentially signal amplifiers that have the special capability of operating at microwave frequencies. The microwave frequency range, which spans from approximately 500 MHz to 300 GHz, is shared by many technologies including cellular phones, satellite television, space communication, and radar. TWT devices are superior in reliability, weight, and efficiency to solid-state amplifiers at the high power and frequency levels required for most space missions. TWTs have three main components -an electron gun, slow wave structure, and collector. The electron gun generates an electron beam that moves along the length of the tube axis, inside of the slow wave circuit. At the same time, the inputted signal is slowed by its travel through the coils of the helical slow wave circuit. The interaction of the electron beam and this slowed signal produces a transfer of kinetic energy to the signal, and in turn, amplification. At the end of its travel, the spent electron beam moves into the collector where its remaining energy is dissipated as heat or harnessed for reuse. TWTs can easily produce gains in the tens of decibels, numbers that are suitable for space missions. To date, however, TWTs have typically operated at fixed levels of gain. This gain is determined by various, unchanging, physical factors of the tube. Traditionally, to achieve varying gain, an input signal s amplitude has had to first be modulated by a separate device before being fed into the TWT. This is not always desirable, as significant distortion can occur in certain situations. My mentor, Mr. Dale Force, has proposed an innovative solution to this problem called direct digital modulation . The testing and implementation of this solution is the focus of my summer internship. The direct digital modulation of a TWT removes the need for a separate amplitude modulation device. Instead, different levels of gain are achieved by varying the electron beam current. The lower the current, the less kinetic energy is available to be transferred to the signal. To vary the current, a grid is placed in-between the electron gun and the slow wave circuit. By changing the voltage across the grid, the electron beam current can be controlled. Grid technology has mostly been used in pulse applications such as radar, where only two voltage states are necessary. For direct digital modulation, however, a continuous range of voltages is required.

Piezoelectric Micromachined Ultrasound Transducer (PMUT) Arrays for Integrated Sensing, Actuation and Imaging

PubMed Central

Qiu, Yongqiang; Gigliotti, James V.; Wallace, Margeaux; Griggio, Flavio; Demore, Christine E. M.; Cochran, Sandy; Trolier-McKinstry, Susan

2015-01-01

Many applications of ultrasound for sensing, actuation and imaging require miniaturized and low power transducers and transducer arrays integrated with electronic systems. Piezoelectric micromachined ultrasound transducers (PMUTs), diaphragm-like thin film flexural transducers typically formed on silicon substrates, are a potential solution for integrated transducer arrays. This paper presents an overview of the current development status of PMUTs and a discussion of their suitability for miniaturized and integrated devices. The thin film piezoelectric materials required to functionalize these devices are discussed, followed by the microfabrication techniques used to create PMUT elements and the constraints the fabrication imposes on device design. Approaches for electrical interconnection and integration with on-chip electronics are discussed. Electrical and acoustic measurements from fabricated PMUT arrays with up to 320 diaphragm elements are presented. The PMUTs are shown to be broadband devices with an operating frequency which is tunable by tailoring the lateral dimensions of the flexural membrane or the thicknesses of the constituent layers. Finally, the outlook for future development of PMUT technology and the potential applications made feasible by integrated PMUT devices are discussed. PMID:25855038

Piezoelectric micromachined ultrasound transducer (PMUT) arrays for integrated sensing, actuation and imaging.

PubMed

Qiu, Yongqiang; Gigliotti, James V; Wallace, Margeaux; Griggio, Flavio; Demore, Christine E M; Cochran, Sandy; Trolier-McKinstry, Susan

2015-04-03

Many applications of ultrasound for sensing, actuation and imaging require miniaturized and low power transducers and transducer arrays integrated with electronic systems. Piezoelectric micromachined ultrasound transducers (PMUTs), diaphragm-like thin film flexural transducers typically formed on silicon substrates, are a potential solution for integrated transducer arrays. This paper presents an overview of the current development status of PMUTs and a discussion of their suitability for miniaturized and integrated devices. The thin film piezoelectric materials required to functionalize these devices are discussed, followed by the microfabrication techniques used to create PMUT elements and the constraints the fabrication imposes on device design. Approaches for electrical interconnection and integration with on-chip electronics are discussed. Electrical and acoustic measurements from fabricated PMUT arrays with up to 320 diaphragm elements are presented. The PMUTs are shown to be broadband devices with an operating frequency which is tunable by tailoring the lateral dimensions of the flexural membrane or the thicknesses of the constituent layers. Finally, the outlook for future development of PMUT technology and the potential applications made feasible by integrated PMUT devices are discussed.

Use of Electronic Versus Print Textbooks by Chilean Dental Students: A National Survey.

PubMed

Aravena, Pedro Christian; Schulz, Karen; Parra, Annemarie; Perez-Rojas, Francisco; Rosas, Cristian; Cartes-Velásquez, Ricardo

2017-03-01

Electronic textbooks have become available in recent decades as replacements or alternatives for print versions. The aim of this descriptive cross-sectional study was to evaluate the use of electronic versus print textbooks by Chilean dental students. The target population was students from 14 Chilean dental schools. The questionnaire was adapted and translated to Spanish from a previous survey used in a similar study. It consisted of the following variables: preferred type, type used, frequency of use, source, electronic devices used to read, and disposal after use. The use of textbooks was analyzed and compared by gender and course (p≤0.05). The final sample consisted of 3,256 students (21.38±2.5 years of age, 50.8% women). Most of the participants reported using both types of texts, with most (63.9%) preferring print over electronic texts, including significantly more women (p<0.001) and first-year students (p<0.001). Most of the participants (82.8%), more women (p<0.001), and with variations over years of study (p<0.001) reported that they printed out their electronic texts, and 91.8% kept their printed material. Most of the students used electronic books on a daily basis (47.3%) or at least twice a week (30.7%). The main source of electronic textbooks was the Internet (43.8%). A personal computer was the most widely used device for reading electronic texts (95.0%), followed by a cell phone (46.4%) and a tablet (24.5%). Overall, these Chilean dental students preferred print over electronic textbooks, despite having available electronic devices.

Analysis of higher harmonics on bidirectional heat pulse propagation experiment in helical and tokamak plasmas

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Ida, K.; Inagaki, S.; Tsuchiya, H.; Tamura, N.; Choe, G. H.; Yun, G. S.; Park, H. K.; Ko, W. H.; Evans, T. E.; Austin, M. E.; Shafer, M. W.; Ono, M.; López-bruna, D.; Ochando, M. A.; Estrada, T.; Hidalgo, C.; Moon, C.; Igami, H.; Yoshimura, Y.; Tsujimura, T. Ii.; Itoh, S.-I.; Itoh, K.

2017-07-01

In this contribution we analyze modulation electron cyclotron resonance heating (MECH) experiment and discuss higher harmonic frequency dependence of transport coefficients. We use the bidirectional heat pulse propagation method, in which both inward propagating heat pulse and outward propagating heat pulse are analyzed at a radial range, in order to distinguish frequency dependence of transport coefficients due to hysteresis from that due to other reasons, such as radially dependent transport coefficients, a finite damping term, or boundary effects. The method is applied to MECH experiments performed in various helical and tokamak devices, i.e. Large Helical Device (LHD), TJ-II, Korea Superconducting Tokamak Advanced Research (KSTAR), and Doublet III-D (DIII-D) with different plasma conditions. The frequency dependence of transport coefficients are clearly observed, showing a possibility of existence of transport hysteresis in flux-gradient relation.

Improved equivalent circuit for twin slot terahertz receivers

NASA Technical Reports Server (NTRS)

McGrath, W. R.

2002-01-01

Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J.; Hersam, Mark C.

2016-02-01

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8 μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Smaller-loss planar SPP transmission line than conventional microstrip in microwave frequencies.

PubMed

Zhang, Hao Chi; Zhang, Qian; Liu, Jun Feng; Tang, Wenxuan; Fan, Yifeng; Cui, Tie Jun

2016-03-17

Transmission line is a basic component in all passive devices, integrated circuits, and systems. Microstrip is the most popular transmission line in the microwave and millimeter-wave frequencies, and has been widely used in current electronic devices, circuits, and systems. One of the important issues to be solved in such applications is the relatively large transmission loss of microstrip. Here, we propose a method to reduce the loss of microwave transmission line based on the designable wavenumber of spoof surface plasmon polaritons (SPPs). Using this characteristic, we analyze and experimentally demonstrate the low-loss feature of the SPP transmission line through the perturbation method and S-parameter measurements, respectively. Both simulation and experimental results show that the SPP transmission line has much smaller transmission loss than traditional microstrip with the same size in the microwave frequencies. Hence, the spoof SPP transmission line may make a big step forward in the low-loss circuits and systems.

Surface-related phase noise in SAW resonators.

PubMed

Enguang, Dai

2002-05-01

With the advent of nanotechnologies, electronic devices are shrinking in thickness and width to reduce mass and, thereby, increase frequency and spe Lithographic approaches are capable of creating metal connections with thickness and lateral dimensions down to about 20 nm, approaching the molecular scale. As a result, the dimensions of outer particles are comparable with, or even larger than, those of active or passive regions in electronics devices. Therefore, directing our attention toward the effect of surface fluctuations is of practical significance. In fact, electronic device surface-related phenomena have already received more and more attention as device size decreases. In connection with surface phase noise, selection of a suitable device with high surface sensitivity is important. In this paper, high Q-value surface acoustic wave resonators were employed because of their strong sensitivity to surface perturbation. Phase noise in SAW resonators related to surface particle motion has been examined both theoretically and experimentally. This kind of noise has been studied from the point of view of a stochastic process resulting from particle molecular adsorption and desorption. Experimental results suggest that some volatile vapors can change flicker noise 1/f and random walk noise 1/f2. An analysis has been made indicating that these effects are not associated with Q value variation, but are generated by the change in the dynamic rate of adsorption and desorption of surface particles. Research on particle motion above the device substrate might explain the differences observed from the model based only on the substrate itself. Results might lead to a better understanding of the phase noise mechanism in micro-electronic devices and help us to build oscillators with improved performance.

[Electronic repellents against mosquitoes: the propaganda and the reality].

PubMed

Coro, F; Suárez, S

1998-01-01

A bibliographic review about the use of electroacoustic devices with a supposed repellent action on the females of different species of hematophagous mosquitoes is presented. 15 direct references and 2 indirect ones are given, in which it is concluded that these devices do not protect those who have them from the stings of mosquitoes. The names of 9 of the tested devices as well as of 16 of the main species of mosquitoes present in the field tests are mentioned. These tests have been carried out in very different ecological conditions from Alaska to Equatorial Africa. It is also stressed that the high intensity ultrasonic frequencies emitted by these devices produces a potentially harmful effect on man.

Inelastic transport theory from first principles: Methodology and application to nanoscale devices

NASA Astrophysics Data System (ADS)

Frederiksen, Thomas; Paulsson, Magnus; Brandbyge, Mads; Jauho, Antti-Pekka

2007-05-01

We describe a first-principles method for calculating electronic structure, vibrational modes and frequencies, electron-phonon couplings, and inelastic electron transport properties of an atomic-scale device bridging two metallic contacts under nonequilibrium conditions. The method extends the density-functional codes SIESTA and TRANSIESTA that use atomic basis sets. The inelastic conductance characteristics are calculated using the nonequilibrium Green’s function formalism, and the electron-phonon interaction is addressed with perturbation theory up to the level of the self-consistent Born approximation. While these calculations often are computationally demanding, we show how they can be approximated by a simple and efficient lowest order expansion. Our method also addresses effects of energy dissipation and local heating of the junction via detailed calculations of the power flow. We demonstrate the developed procedures by considering inelastic transport through atomic gold wires of various lengths, thereby extending the results presented in Frederiksen [Phys. Rev. Lett. 93, 256601 (2004)]. To illustrate that the method applies more generally to molecular devices, we also calculate the inelastic current through different hydrocarbon molecules between gold electrodes. Both for the wires and the molecules our theory is in quantitative agreement with experiments, and characterizes the system-specific mode selectivity and local heating.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sterczewski, L. A., E-mail: lukasz.sterczewski@pwr.edu.pl; Grzelczak, M. P.; Plinski, E. F.

In this paper, we present an electronic circuit used to bias a photoconductive antenna that generates terahertz radiation. The working principles and the design process for the device are discussed in detail. The noise and shape of the wave measurements for a built device are considered. Furthermore, their impact on a terahertz pulse and its spectra is also examined. The proposed implementation is simple to build, robust and offers a real improvement over THz instrumentation due to the frequency tuning. Additionally, it provides for galvanic isolation and ESD protection.

Wall charging of a helicon antenna wrapped plasma filled dielectric tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barada, Kshitish K., E-mail: kbarada@physics.ucla.edu; Chattopadhyay, P. K., E-mail: pkchatto@ipr.res.in; Ghosh, J.

2015-01-15

Dielectric wall charging of a cylindrical glass wall surrounded by a helicon antenna of 18 cm length is measured in a linear helicon plasma device with a diverging magnetic field. The ions because of their lesser mobility do not respond to the high frequency electric field and the electrons charge the wall to a negative DC potential also known as the DC self-bias. The wall potential in this device is characterized for different neutral pressure, magnetic field, and radio frequency (RF) power. Axial variation of wall potential shows higher self-bias potentials near the antenna rings. Ion magnetization in the source chambermore » increases both wall charging and plasma potential of the source due to confinement.« less

Carbon nanotube transistor based high-frequency electronics

NASA Astrophysics Data System (ADS)

Schroter, Michael

At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks.

Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Gill, John J.; Mehdi, Imran; Crawford, Timothy J.; Sergeev, Andrei V.; Mitin, Vladimir V.

2012-01-01

High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

An intelligent artificial throat with sound-sensing ability based on laser induced graphene

PubMed Central

Tao, Lu-Qi; Tian, He; Liu, Ying; Ju, Zhen-Yi; Pang, Yu; Chen, Yuan-Quan; Wang, Dan-Yang; Tian, Xiang-Guang; Yan, Jun-Chao; Deng, Ning-Qin; Yang, Yi; Ren, Tian-Ling

2017-01-01

Traditional sound sources and sound detectors are usually independent and discrete in the human hearing range. To minimize the device size and integrate it with wearable electronics, there is an urgent requirement of realizing the functional integration of generating and detecting sound in a single device. Here we show an intelligent laser-induced graphene artificial throat, which can not only generate sound but also detect sound in a single device. More importantly, the intelligent artificial throat will significantly assist for the disabled, because the simple throat vibrations such as hum, cough and scream with different intensity or frequency from a mute person can be detected and converted into controllable sounds. Furthermore, the laser-induced graphene artificial throat has the advantage of one-step fabrication, high efficiency, excellent flexibility and low cost, and it will open practical applications in voice control, wearable electronics and many other areas. PMID:28232739

An intelligent artificial throat with sound-sensing ability based on laser induced graphene.

PubMed

Tao, Lu-Qi; Tian, He; Liu, Ying; Ju, Zhen-Yi; Pang, Yu; Chen, Yuan-Quan; Wang, Dan-Yang; Tian, Xiang-Guang; Yan, Jun-Chao; Deng, Ning-Qin; Yang, Yi; Ren, Tian-Ling

2017-02-24

Traditional sound sources and sound detectors are usually independent and discrete in the human hearing range. To minimize the device size and integrate it with wearable electronics, there is an urgent requirement of realizing the functional integration of generating and detecting sound in a single device. Here we show an intelligent laser-induced graphene artificial throat, which can not only generate sound but also detect sound in a single device. More importantly, the intelligent artificial throat will significantly assist for the disabled, because the simple throat vibrations such as hum, cough and scream with different intensity or frequency from a mute person can be detected and converted into controllable sounds. Furthermore, the laser-induced graphene artificial throat has the advantage of one-step fabrication, high efficiency, excellent flexibility and low cost, and it will open practical applications in voice control, wearable electronics and many other areas.

An intelligent artificial throat with sound-sensing ability based on laser induced graphene

NASA Astrophysics Data System (ADS)

Tao, Lu-Qi; Tian, He; Liu, Ying; Ju, Zhen-Yi; Pang, Yu; Chen, Yuan-Quan; Wang, Dan-Yang; Tian, Xiang-Guang; Yan, Jun-Chao; Deng, Ning-Qin; Yang, Yi; Ren, Tian-Ling

2017-02-01

Traditional sound sources and sound detectors are usually independent and discrete in the human hearing range. To minimize the device size and integrate it with wearable electronics, there is an urgent requirement of realizing the functional integration of generating and detecting sound in a single device. Here we show an intelligent laser-induced graphene artificial throat, which can not only generate sound but also detect sound in a single device. More importantly, the intelligent artificial throat will significantly assist for the disabled, because the simple throat vibrations such as hum, cough and scream with different intensity or frequency from a mute person can be detected and converted into controllable sounds. Furthermore, the laser-induced graphene artificial throat has the advantage of one-step fabrication, high efficiency, excellent flexibility and low cost, and it will open practical applications in voice control, wearable electronics and many other areas.

Multiplexing of Hot-Electron Nanobolometers Using Microwave SQUIDs

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Day, Peter K.; Kawamura, Jonathan H.; Bumble, Bruce; LeDuc, Henry G.

2009-01-01

We have obtained the first data on the multiplexed operation of titanium hot-electron bolometers (HEB). Because of their low thermal conductance and small electron heat capacity nanobolometers are particularly interesting as sensors for far-infrared spectroscopy and mid- and near-IR calorimetry. However, the short time constant of these devices (approximately microseconds at 300-400 mK) makes time domain or audio-frequency domain multiplexing impractical. The Microwave SQUID (MSQUID) approach pursued in this work uses dc SQUIDs coupled to X-band microresonators which are, in turn, coupled to a transmission line. We used a 4-element array of Ti HEBs operated at 415 mK in a He3 dewar with an optical fiber access. The microwave signal exhibited 10-MHz wide resonances at individual MSQUD frequencies between 9 GHz and 10 GHz. The resonance depth is modulated by the current through the bolometer via a change of the SQUID flux state. The transmitted signal was amplified by a cryogenic amplifier and downconverted to baseband using an IQ mixer. A 1-dB per ??/2 responsivity was sufficient for keeping the system noise at the level of 2 pA/Hz1/2. This is more than an order of magnitude smaller than phonon noise in the HEB. The devices were able to detect single near- IR photons (1550 nm) with a time constant of 3.5 ?s. Follow-on work will scale the array to larger size and will address the microwave frequency signal generation and processing using a digital transceiver.

Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

2017-12-01

This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Acoustic biosensors.

PubMed

Fogel, Ronen; Limson, Janice; Seshia, Ashwin A

2016-06-30

Resonant and acoustic wave devices have been researched for several decades for application in the gravimetric sensing of a variety of biological and chemical analytes. These devices operate by coupling the measurand (e.g. analyte adsorption) as a modulation in the physical properties of the acoustic wave (e.g. resonant frequency, acoustic velocity, dissipation) that can then be correlated with the amount of adsorbed analyte. These devices can also be miniaturized with advantages in terms of cost, size and scalability, as well as potential additional features including integration with microfluidics and electronics, scaled sensitivities associated with smaller dimensions and higher operational frequencies, the ability to multiplex detection across arrays of hundreds of devices embedded in a single chip, increased throughput and the ability to interrogate a wider range of modes including within the same device. Additionally, device fabrication is often compatible with semiconductor volume batch manufacturing techniques enabling cost scalability and a high degree of precision and reproducibility in the manufacturing process. Integration with microfluidics handling also enables suitable sample pre-processing/separation/purification/amplification steps that could improve selectivity and the overall signal-to-noise ratio. Three device types are reviewed here: (i) bulk acoustic wave sensors, (ii) surface acoustic wave sensors, and (iii) micro/nano-electromechanical system (MEMS/NEMS) sensors. © 2016 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

Microwave accelerator E-beam pumped laser

DOEpatents

Brau, Charles A.; Stein, William E.; Rockwood, Stephen D.

1980-01-01

A device and method for pumping gaseous lasers by means of a microwave accelerator. The microwave accelerator produces a relativistic electron beam which is applied along the longitudinal axis of the laser through an electron beam window. The incident points of the electron beam on the electron beam window are varied by deflection coils to enhance the cooling characteristics of the foil. A thyratron is used to reliably modulate the microwave accelerator to produce electron beam pulses which excite the laser medium to produce laser pulse repetition frequencies not previously obtainable. An aerodynamic window is also disclosed which eliminates foil heating problems, as well as a magnetic bottle for reducing laser cavity length and pressures while maintaining efficient energy deposition.

The Validity and Reliability of an iPhone App for Measuring Running Mechanics.

PubMed

Balsalobre-Fernández, Carlos; Agopyan, Hovannes; Morin, Jean-Benoit

2017-07-01

The purpose of this investigation was to analyze the validity of an iPhone application (Runmatic) for measuring running mechanics. To do this, 96 steps from 12 different runs at speeds ranging from 2.77-5.55 m·s -1 were recorded simultaneously with Runmatic, as well as with an opto-electronic device installed on a motorized treadmill to measure the contact and aerial time of each step. Additionally, several running mechanics variables were calculated using the contact and aerial times measured, and previously validated equations. Several statistics were computed to test the validity and reliability of Runmatic in comparison with the opto-electronic device for the measurement of contact time, aerial time, vertical oscillation, leg stiffness, maximum relative force, and step frequency. The running mechanics values obtained with both the app and the opto-electronic device showed a high degree of correlation (r = .94-.99, p < .001). Moreover, there was very close agreement between instruments as revealed by the ICC (2,1) (ICC = 0.965-0.991). Finally, both Runmatic and the opto-electronic device showed almost identical reliability levels when measuring each set of 8 steps for every run recorded. In conclusion, Runmatic has been proven to be a highly reliable tool for measuring the running mechanics studied in this work.

All-printed diode operating at 1.6 GHz

PubMed Central

Sani, Negar; Robertsson, Mats; Cooper, Philip; Wang, Xin; Svensson, Magnus; Andersson Ersman, Peter; Norberg, Petronella; Nilsson, Marie; Nilsson, David; Liu, Xianjie; Hesselbom, Hjalmar; Akesso, Laurent; Fahlman, Mats; Crispin, Xavier; Engquist, Isak; Berggren, Magnus; Gustafsson, Göran

2014-01-01

Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications. PMID:25002504

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutherland, Kevin Jerome

Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronicmore » devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.« less

Phonoconductivity measurements of the electron-phonon interaction in quantum wire structures

NASA Astrophysics Data System (ADS)

Naylor, A. J.; Strickland, K. R.; Kent, A. J.; Henini, M.

1996-07-01

We have used a phonoconductivity technique to investigate the electron-phonon interaction in quantum wires. This interaction has important consequences for certain aspects of device behaviour. The 10 μm long wires were formed in GaAs/AlGaAs heterojunctions using split-gates. Ballistic phonon pulses, with an approximately Planckian frequency spectrum, were generated by a resistive film heater on the opposite side of the substrate. The interaction of the phonons with the quantum wire was detected via changes in conductance of the device. Oscillations in the phonoconductivity were observed with increasing (negative) gate bias. These oscillations were related to the Fermi level position relative to the one-dimensional subband structure which was determined from electrical transport measurements. We give a qualitative explanation of the results in terms of phonon induced inter- and intra- 1D subband electronic transitions leading to changes in the electron temperature which in turn affect the conductance. From our results we obtain a value for the effective width of the quantum wire.

Graphene: an emerging electronic material.

PubMed

Weiss, Nathan O; Zhou, Hailong; Liao, Lei; Liu, Yuan; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-11-14

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radio Frequency Transistors and Circuits Based on CVD MoS2.

PubMed

Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

2015-08-12

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Optical wet steam monitor

DOEpatents

Maxey, L.C.; Simpson, M.L.

1995-01-17

A wet steam monitor determines steam particle size by using laser doppler velocimeter (LDV) device to produce backscatter light. The backscatter light signal is processed with a spectrum analyzer to produce a visibility waveform in the frequency domain. The visibility waveform includes a primary peak and a plurality of sidebands. The bandwidth of at least the primary frequency peak is correlated to particle size by either visually comparing the bandwidth to those of known particle sizes, or by digitizing the waveform and comparing the waveforms electronically. 4 figures.

R&D100: LED Pulser

ScienceCinema

Pickett, Lyle; Manin, Julien; Eagle, Ethan

2018-06-12

A Sandia National Laboratories' light emitting diode (LED) driver is generating light pulses with shorter duration higher repetition frequency and higher brightness than anything on the market. The Sandia LED Pulser uses custom electronic circuitry to drive high-power LEDs to generate short, bright, high frequency light pulses. A single device can emit up to four different colors - each with independent pulse timing - crucial for light-beam forming in many optical applications and is more economical than current light sources such as lasers.

Optical wet steam monitor

DOEpatents

Maxey, Lonnie C.; Simpson, Marc L.

1995-01-01

A wet steam monitor determines steam particle size by using laser doppler velocimeter (LDV) device to produce backscatter light. The backscatter light signal is processed with a spectrum analyzer to produce a visibility waveform in the frequency domain. The visibility waveform includes a primary peak and a plurality of sidebands. The bandwidth of at least the primary frequency peak is correlated to particle size by either visually comparing the bandwidth to those of known particle sizes, or by digitizing the waveform and comparing the waveforms electronically.

Power-Efficient, High-Current-Density, Long-Life Thermionic Cathode Developed for Microwave Amplifier Applications

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.

2002-01-01

A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.

An inexpensive frequency-modulated (FM) audio monitor of time-dependent analog parameters.

PubMed

Langdon, R B; Jacobs, R S

1980-02-01

The standard method for quantification and presentation of an experimental variable in real time is the use of visual display on the ordinate of an oscilloscope screen or chart recorder. This paper describes a relatively simple electronic circuit, using commercially available and inexpensive integrated circuits (IC), which generates an audible tone, the pitch of which varies in proportion to a running variable of interest. This device, which we call an "Audioscope," can accept as input the monitor output from any instrument that expresses an experimental parameter as a dc voltage. The Audioscope is particularly useful in implanting microelectrodes intracellularly. It may also function to mediate the first step in data recording on magnetic tape, and/or data analysis and reduction by electronic circuitary. We estimate that this device can be built, with two-channel capability, for less than $50, and in less than 10 hr by an experienced electronics technician.

Microwave Imaging in Large Helical Device

NASA Astrophysics Data System (ADS)

Yoshinaga, T.; Nagayama, Y.; Tsuchiya, H.; Kuwahara, D.; Tsuji-Iio, S.; Akaki, K.; Mase, A.; Kogi, Y.; Yamaguchi, S.; Shi, Z. B.; Hojo, H.

2011-02-01

Microwave imaging reflectometry (MIR) system and electron cyclotron emission imaging (ECEI) system are under development for the simultaneous reconstruction of the electron density and temperature fluctuation structures in the Large Helical Device (LHD). The MIR observes three-dimensional structure of disturbed cutoff surfaces by using the two-dimensionally distributed horn-antenna mixer array (HMA) of 5 × 7 channels in combination with the simultaneous projection of microwaves with four different frequency components (60.410, 61.808, 63.008 and 64.610 GHz). The ECEI is designed to observe two-dimensional structure of electron temperature by detecting second-harmonic ECE at 97-107 GHz with the one-dimensional HMA (7 channels) in the common optics with MIR system. Both the MIR and the ECEI are realized by the HMA and the band-pass filter (BPF) arrays, which are fabricated by micro-strip-line technique at low-cost.

Extreme sensitivity of graphene photoconductivity to environmental gases

PubMed Central

Docherty, Callum J.; Lin, Cheng-Te; Joyce, Hannah J.; Nicholas, Robin J.; Herz, Laura M.; Li, Lain-Jong; Johnston, Michael B.

2012-01-01

Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices. PMID:23187628

A 17 GHz molecular rectifier

PubMed Central

Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

2016-01-01

Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation. PMID:27694833

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

NASA Astrophysics Data System (ADS)

Münzenrieder, Niko; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard

2014-12-01

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (LOV) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on LOV. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

Triboelectric Nanogenerator as a Self-Powered Communication Unit for Processing and Transmitting Information.

PubMed

Yu, Aifang; Chen, Xiangyu; Wang, Rui; Liu, Jingyu; Luo, Jianjun; Chen, Libo; Zhang, Yang; Wu, Wei; Liu, Caihong; Yuan, Hongtao; Peng, Mingzeng; Hu, Weiguo; Zhai, Junyi; Wang, Zhong Lin

2016-04-26

In this paper, we demonstrate an application of a triboelectric nanogenerator (TENG) as a self-powered communication unit. An elaborately designed TENG is used to translate a series of environmental triggering signals into binary digital signals and drives an electronic-optical device to transmit binary digital data in real-time without an external power supply. The elaborately designed TENG is built in a membrane structure that can effectively drive the electronic-optical device in a bandwidth from 1.30 to 1.65 kHz. Two typical communication modes (amplitude-shift keying and frequency-shift keying) are realized through the resonant response of TENG to different frequencies, and two digital signals, i.e., "1001" and "0110", are successfully transmitted and received through this system, respectively. Hence, in this study, a simple but efficient method for directly transmitting ambient vibration to the receiver as a digital signal is established using an elaborately designed TENG and an optical communication technique. This type of the communication system, as well as the implementation method presented, exhibits great potential for applications in the smart city, smart home, password authentication, and so on.

Flexible diodes for radio frequency (RF) electronics: a materials perspective

NASA Astrophysics Data System (ADS)

Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

2017-12-01

Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

Nonlinear analysis of a relativistic beam-plasma cyclotron instability

NASA Technical Reports Server (NTRS)

Sprangle, P.; Vlahos, L.

1986-01-01

A self-consistent set of nonlinear and relativistic wave-particle equations are derived for a magnetized beam-plasma system interacting with electromagnetic cyclotron waves. In particular, the high-frequency cyclotron mode interacting with a streaming and gyrating electron beam within a background plasma is considered in some detail. This interaction mode may possibly find application as a high-power source of coherent short-wavelength radiation for laboratory devices. The background plasma, although passive, plays a central role in this mechanism by modifying the dielectric properties in which the magnetized electron beam propagates. For a particular choice of the transverse beam velocity (i.e., the speed of light divided by the relativistic mass factor), the interaction frequency equals the nonrelativistic electron cyclotron frequency times the relativistic mass factor. For this choice of transverse beam velocity the detrimental effects of a longitudinal beam velocity spread is virtually removed. Power conversion efficiencies in excess of 18 percent are both analytically calculated and obtained through numerical simulations of the wave-particle equations. The quality of the electron beam, degree of energy and pitch angle spread, and its effect on the beam-plasma cyclotron instability is studied.

Thickness-dependent carrier and phonon dynamics of topological insulator Bi2Te3 thin films.

PubMed

Zhao, Jie; Xu, Zhongjie; Zang, Yunyi; Gong, Yan; Zheng, Xin; He, Ke; Cheng, Xiang'ai; Jiang, Tian

2017-06-26

As a new quantum state of matter, topological insulators offer a new platform for exploring new physics, giving rise to fascinating new phenomena and new devices. Lots of novel physical properties of topological insulators have been studied extensively and are attributed to the unique electron-phonon interactions at the surface. Although electron behavior in topological insulators has been studied in detail, electron-phonon interactions at the surface of topological insulators are less understood. In this work, using optical pump-optical probe technology, we performed transient absorbance measurement on Bi 2 Te 3 thin films to study the dynamics of its hot carrier relaxation process and coherent phonon behavior. The excitation and dynamics of phonon modes are observed with a response dependent on the thickness of the samples. The thickness-dependent characteristic time, amplitude and frequency of the damped oscillating signals are acquired by fitting the signal profiles. The results clearly indicate that the electron-hole recombination process gradually become dominant with the increasing thickness which is consistent with our theoretical calculation. In addition, a frequency modulation phenomenon on the high-frequency oscillation signals induced by coherent optical phonons is observed.

Penetration of High Intensity Radiated Fields (HIRF) Into General Aviation Aircraft

NASA Technical Reports Server (NTRS)

Balanis, Constantine A.; Birtcher, Craig R.; Georgakopoulos, Stavros V.; Panaretos, Anastasios H.

2004-01-01

The ability to design and achieve electromagnetic compatibility is becoming more challenging with the rapid development of new electronic products and technologies. The importance of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues stems from the fact that the ambient electromagnetic environment has become very hostile; that is, it increases both in density and intensity, while the current trend in technology suggests the number of electronic devices increases in homes, businesses, factories, and transportation vehicles. Furthermore, the operating frequency of products coming into the market continuously increases. While cell phone technology has exceeded 1 GHz and Bluetooth operates at 2.4 GHz, products involving satellite communications operate near 10 GHz and automobile radar systems involve frequencies above 40 GHz. The concern about higher frequencies is that they correspond to smaller wavelengths, therefore electromagnetic waves are able to penetrate equipment enclosure through apertures or even small cracks more easily. In addition, electronic circuits have become small in size, and they are usually placed on motherboards or housed in boxes in very close proximity. Cosite interference and coupling in all electrical and electronic circuit assemblies are two essential issues that have to be examined in every design.

Overview of ECRH experimental results

NASA Astrophysics Data System (ADS)

Lloyd, Brian

1998-08-01

A review of the present status of electron cyclotron heating and current drive experiments in toroidal fusion devices is presented. In addition to basic heating and current drive studies the review also addresses advances in wave physics and the application of electron cyclotron waves for instability control, transport studies, pre-ionization/start-up assist, etc. A comprehensive overview is given with particular emphasis on recent advances since the major review of Erckmann and Gasparino (1994) ( 36 1869), including results from the latest generation of high-power, high-frequency experiments.

On boundaries of ping-pong modes in multipacting

NASA Astrophysics Data System (ADS)

Shemelin, Valery

2018-05-01

Multipactor is an avalanche multiplication of the number of electrons in radio-frequency devices due to secondary electron emission. One of the possible modes of this kind of discharge was studied in detail and was named "a ping-pong mode" in a publication by R. A. Kishek [Phys. Rev. Lett. 108, 035003 (2012) and Phys. Plasmas 20, 056702 (2013)]. In the present paper, I show that conditions of stability and cutoff limits are quite different from those derived in the cited papers.

Electron current extraction from radio frequency excited micro-dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon

Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10-100 {mu}m diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N{sub 2} will bemore » discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.« less

Flexible and wearable 3D graphene sensor with 141 KHz frequency signal response capability

NASA Astrophysics Data System (ADS)

Xu, R.; Zhang, H.; Cai, Y.; Ruan, J.; Qu, K.; Liu, E.; Ni, X.; Lu, M.; Dong, X.

2017-09-01

We developed a flexible force sensor consisting of 3D graphene foam (GF) encapsulated in flexible polydimethylsiloxane (PDMS). Because the 3D GF/PDMS sensor is based on the transformation of an electronic band structure aroused by static mechanical strain or KHz vibration, it can detect frequency signals by both tuning fork tests and piezoelectric ceramic transducer tests, which showed a clear linear response from audio frequencies, including frequencies up to 141 KHz in the ultrasound range. Because of their excellent response with a wide bandwidth, the 3D GF/PDMS sensors are attractive for interactive wearable devices or artificial prosthetics capable of perceiving seismic waves, ultrasonic waves, shock waves, and transient pressures.

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo

2015-02-02

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in ordermore » to evaluate their potential use as temperature sensors for acoustic phonons.« less

Subterahertz gyrotron developments for collective Thomson scattering in LHDa)

NASA Astrophysics Data System (ADS)

Notake, T.; Saito, T.; Tatematsu, Y.; Kubo, S.; Shimozuma, T.; Tanaka, K.; Nishiura, M.; Fujii, A.; Agusu, La; Ogawa, I.; Idehara, T.

2008-10-01

Collective Thomson scattering (CTS) is expected to provide the spatially resolved velocity distribution functions of not only thermal and tail ions but also alpha particles resulting from fusion reactions. CTS using gyrotrons with frequency higher than the conventional ones used for plasma heating would have advantages to alleviate refraction, cutoff effects, and background electron cyclotron emission noise. Therefore, a high-power pulse gyrotron operating at approximately 400 GHz is being developed for CTS in Large Helical Device (LHD). A single-mode oscillation with a frequency greater than 400 GHz, applying the second-harmonic resonance, was successfully demonstrated in the first stage. At the same time, concrete feasibility study based on ray tracing, scattering spectra, and electron cyclotron emission calculations has been conducted.

Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance.

PubMed

Cheng, Zhe; Bougher, Thomas; Bai, Tingyu; Wang, Steven Y; Li, Chao; Yates, Luke; Foley, Brian M; Goorsky, Mark; Cola, Baratunde A; Faili, Firooz; Graham, Samuel

2018-02-07

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating, which degrades device performance and reliability. Chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat and in minimizing the peak operating temperatures of high-power electronics. Owing to its inhomogeneous structure, the thermal conductivity of CVD diamond varies along the growth direction and can differ between the in-plane and out-of-plane directions, resulting in a complex three-dimensional (3D) distribution. Depending on the thickness of the diamond and size of the electronic device, this 3D distribution may impact the effectiveness of CVD diamond in device thermal management. In this work, time-domain thermoreflectance is used to measure the anisotropic thermal conductivity of an 11.8 μm-thick high-quality CVD diamond membrane from its nucleation side. Starting with a spot-size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 to 11.6 MHz to tune the heat penetration depth and sample the variation in thermal conductivity. We then analyze the data by creating a model with the membrane divided into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a two-dimensional gradient of the depth-dependent thermal conductivity for this membrane. The local thermal conductivity goes beyond 1000 W/(m K) when the distance from the nucleation interface only reaches 3 μm. Additionally, by measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivities are extracted. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides an improved understanding of thermal conductivity inhomogeneity in high-quality CVD polycrystalline diamond that is important for applications in the thermal management of high-power electronics.

Status of VESAS: a fully-electronic microwave imaging radiometer system

NASA Astrophysics Data System (ADS)

Schreiber, Eric; Peichl, Markus; Suess, Helmut

2010-04-01

Present applications of microwave remote sensing systems cover a large variety. One utilisation of the frequency range from 1 - 300 GHz is the domain of security and reconnaissance. Examples are the observation of critical infrastructures or the performance of security checks on people in order to detect concealed weapons or explosives, both being frequent threats in our world of growing international terrorism. The imaging capability of concealed objects is one of the main advantages of microwave remote sensing, because of the penetration performance of electromagnetic waves through dielectric materials in this frequency domain. The main physical effects used in passive microwave sensing rely on the naturally generated thermal radiation and the physical properties of matter, the latter being surface characteristics, chemical and physical composition, and the temperature of the material. As a consequence it is possible to discriminate objects having different material characteristics like ceramic weapons or plastic explosives with respect to the human body. Considering the use of microwave imaging with respect to people scanning systems in airports, railway stations, or stadiums, it is advantageous that passively operating devices generate no exposure on the scanned objects like actively operating devices do. For frequently used security gateways it is additionally important to have a high through-put rate in order to minimize the queue time. Consequently fast imaging systems are necessary. In this regard the conceptual idea of a fully-electronic microwave imaging radiometer system is introduced. The two-dimensional scanning mechanism is divided into a frequency scan in one direction and the method of aperture synthesis in the other. The overall goal here is to design a low-cost, fully-electronic imaging system with a frame rate of around one second at Ka band. This frequency domain around a center frequency of 37 GHz offers a well-balanced compromise between the achievable spatial resolution for a given size, and the penetration depth of the electromagnetic wave, which are conflictive requirements.

Adolescent sleep patterns and night-time technology use: results of the Australian Broadcasting Corporation's Big Sleep Survey.

PubMed

Gamble, Amanda L; D'Rozario, Angela L; Bartlett, Delwyn J; Williams, Shaun; Bin, Yu Sun; Grunstein, Ronald R; Marshall, Nathaniel S

2014-01-01

Electronic devices in the bedroom are broadly linked with poor sleep in adolescents. This study investigated whether there is a dose-response relationship between use of electronic devices (computers, cellphones, televisions and radios) in bed prior to sleep and adolescent sleep patterns. Adolescents aged 11-17 yrs (n = 1,184; 67.6% female) completed an Australia-wide internet survey that examined sleep patterns, sleepiness, sleep disorders, the presence of electronic devices in the bedroom and frequency of use in bed at night. Over 70% of adolescents reported 2 or more electronic devices in their bedroom at night. Use of devices in bed a few nights per week or more was 46.8% cellphone, 38.5% computer, 23.2% TV, and 15.8% radio. Device use had dose-dependent associations with later sleep onset on weekdays (highest-dose computer adjOR  = 3.75: 99% CI  = 2.17-6.46; cellphone 2.29: 1.22-4.30) and weekends (computer 3.68: 2.14-6.32; cellphone 3.24: 1.70-6.19; TV 2.32: 1.30-4.14), and later waking on weekdays (computer 2.08: 1.25-3.44; TV 2.31: 1.33-4.02) and weekends (computer 1.99: 1.21-3.26; cellphone 2.33: 1.33-4.08; TV 2.04: 1.18-3.55). Only 'almost every night' computer use (: 2.43: 1.45-4.08) was associated with short weekday sleep duration, and only 'almost every night' cellphone use (2.23: 1.26-3.94) was associated with wake lag (waking later on weekends). Use of computers, cell-phones and televisions at higher doses was associated with delayed sleep/wake schedules and wake lag, potentially impairing health and educational outcomes.

Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices.

PubMed

da Silva, Roberto; Lamb, Luis C; Wirth, Gilson Inacio

2011-01-28

Continuous reductions in the dimensions of semiconductor devices have led to an increasing number of noise sources, including random telegraph signals (RTS) due to the capture and emission of electrons by traps at random positions between oxide and semiconductor. The models traditionally used for microscopic devices become of limited validity in nano- and mesoscale systems since, in such systems, distributed quantities such as electron and trap densities, and concepts like electron mobility, become inadequate to model electrical behaviour. In addition, current experimental works have shown that RTS in semiconductor devices based on carbon nanotubes lead to giant current fluctuations. Therefore, the physics of this phenomenon and techniques to decrease the amplitudes of RTS need to be better understood. This problem can be described as a collective Poisson process under different, but time-independent, rates, τ(c) and τ(e), that control the capture and emission of electrons by traps distributed over the oxide. Thus, models that consider calculations performed under time-dependent periodic capture and emission rates should be of interest in order to model more efficient devices. We show a complete theoretical description of a model that is capable of showing a noise reduction of current fluctuations in the time domain, and a reduction of the power spectral density in the frequency domain, in semiconductor devices as predicted by previous experimental work. We do so through numerical integrations and a novel Monte Carlo Markov chain (MCMC) algorithm based on microscopic discrete values. The proposed model also handles the ballistic regime, relevant in nano- and mesoscale devices. Finally, we show that the ballistic regime leads to nonlinearity in the electrical behaviour.

Experimental and theoretical studies of Sub-THz detection using strained-Si FETs

NASA Astrophysics Data System (ADS)

Delgado Notario, J. A.; Javadi, E.; Clericò, V.; Fobelets, K.; Otsuji, T.; Diez, E.; Velázquez-Pérez, J. E.; Meziani, Y. M.

2017-10-01

We report on experimental and theoretical studies of nanoscale gate-lengths strained Silicon MODFETs as room temperature non resonant detectors. Devices were excited at room temperature by an electronic source at 150 and 300 GHz to characterize their sub-THz response. The maximum of the photovoltaic response was obtained when the FET gate was biased at a value close to the threshold voltage. Simulations based on a bi-dimensional hydrodynamic model for the charge transport coupled to a Poisson equation solver were performed by using Synopsys TCAD. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic response. Results from numerical simulations are in agreement with experimental ones. To understand the coupling between terahertz radiation and devices, the devices were rotated at different angles under excitation at both sub-terahertz frequencies and their response measured. Both NEP (Noise Equivalent Power) and Responsivity were calculated from measurements. To demonstrate their utility, devices were used as sensors in a terahertz imaging system for inspection of hidden objects at both frequencies.

Micro-Scale Thermoacoustics

NASA Astrophysics Data System (ADS)

Offner, Avshalom; Ramon, Guy Z.

2016-11-01

Thermoacoustic phenomena - conversion of heat to acoustic oscillations - may be harnessed for construction of reliable, practically maintenance-free engines and heat pumps. Specifically, miniaturization of thermoacoustic devices holds great promise for cooling of micro-electronic components. However, as devices size is pushed down to micro-meter scale it is expected that non-negligible slip effects will exist at the solid-fluid interface. Accordingly, new theoretical models for thermoacoustic engines and heat pumps were derived, accounting for a slip boundary condition. These models are essential for the design process of micro-scale thermoacoustic devices that will operate under ultrasonic frequencies. Stability curves for engines - representing the onset of self-sustained oscillations - were calculated with both no-slip and slip boundary conditions, revealing improvement in the performance of engines with slip at the resonance frequency range applicable for micro-scale devices. Maximum achievable temperature differences curves for thermoacoustic heat pumps were calculated, revealing the negative effect of slip on the ability to pump heat up a temperature gradient. The authors acknowledge the support from the Nancy and Stephen Grand Technion Energy Program (GTEP).

Potential GPRS 900/180-MHz and WCDMA 1900-MHz interference to medical devices.

PubMed

Iskra, Steve; Thomas, Barry W; McKenzie, Ray; Rowley, Jack

2007-10-01

This study compared the potential for interference to medical devices from radio frequency (RF) fields radiated by GSM 900/1800-MHz, general packet radio service (GPRS) 900/1800-MHz, and wideband code division multiple access (WCDMA) 1900-MHz handsets. The study used a balanced half-wave dipole antenna, which was energized with a signal at the standard power level for each technology, and then brought towards the medical device while noting the distance at which interference became apparent. Additional testing was performed with signals that comply with the requirements of the international immunity standard to RF fields, IEC 61000-4-3. The testing provides a sense of the overall interference impact that GPRS and WCDMA (frequency division duplex) may have, relative to current mobile technologies, and to the internationally recognized standard for radiated RF immunity. Ten medical devices were tested: two pulse oximeters, a blood pressure monitor, a patient monitor, a humidifier, three models of cardiac defibrillator, and two models of infusion pump. Our conclusion from this and a related study on consumer devices is that WCDMA handsets are unlikely to be a significant interference threat to medical electronics at typical separation distances.

New evidence and impact of electron transport non-linearities based on new perturbative inter-modulation analysis

NASA Astrophysics Data System (ADS)

van Berkel, M.; Kobayashi, T.; Igami, H.; Vandersteen, G.; Hogeweij, G. M. D.; Tanaka, K.; Tamura, N.; Zwart, H. J.; Kubo, S.; Ito, S.; Tsuchiya, H.; de Baar, M. R.; LHD Experiment Group

2017-12-01

A new methodology to analyze non-linear components in perturbative transport experiments is introduced. The methodology has been experimentally validated in the Large Helical Device for the electron heat transport channel. Electron cyclotron resonance heating with different modulation frequencies by two gyrotrons has been used to directly quantify the amplitude of the non-linear component at the inter-modulation frequencies. The measurements show significant quadratic non-linear contributions and also the absence of cubic and higher order components. The non-linear component is analyzed using the Volterra series, which is the non-linear generalization of transfer functions. This allows us to study the radial distribution of the non-linearity of the plasma and to reconstruct linear profiles where the measurements were not distorted by non-linearities. The reconstructed linear profiles are significantly different from the measured profiles, demonstrating the significant impact that non-linearity can have.

Frequency-Domain Analysis of Diffusion-Cooled Hot-Electron Bolometer Mixers

NASA Technical Reports Server (NTRS)

Skalare, A.; McGrath, W. R.; Bumble, B.; LeDuc, H. G.

1998-01-01

A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers. The model takes into account the non-uniform internal electron temperature distribution generated by Wiedemann-Franz heat conduction, and accepts for input an arbitrary (analytical or experimental) superconducting resistance-versus- temperature curve. A non-linear large-signal solution is solved iteratively to calculate the temperature distribution, and a linear frequency-domain small-signal formulation is used to calculate conversion efficiency and noise. In the small-signal solution the device is discretized into segments, and matrix algebra is used to relate the heating modulation in the segments to temperature and resistance modulations. Matrix expressions are derived that allow single-sideband mixer conversion efficiency and coupled noise power to be directly calculated. The model accounts for self-heating and electrothermal feedback from the surrounding bias circuit.

A novel thermal acoustic device based on porous graphene

NASA Astrophysics Data System (ADS)

Tao, Lu-Qi; Liu, Ying; Tian, He; Ju, Zhen-Yi; Xie, Qian-Yi; Yang, Yi; Ren, Tian-Ling

2016-01-01

A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser's irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration, low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.

AC signal characterization for optimization of a CMOS single-electron pump

NASA Astrophysics Data System (ADS)

Murray, Roy; Perron, Justin K.; Stewart, M. D., Jr.; Zimmerman, Neil M.

2018-02-01

Pumping single electrons at a set rate is being widely pursued as an electrical current standard. Semiconductor charge pumps have been pursued in a variety of modes, including single gate ratchet, a variety of 2-gate ratchet pumps, and 2-gate turnstiles. Whether pumping with one or two AC signals, lower error rates can result from better knowledge of the properties of the AC signal at the device. In this work, we operated a CMOS single-electron pump with a 2-gate ratchet style measurement and used the results to characterize and optimize our two AC signals. Fitting this data at various frequencies revealed both a difference in signal path length and attenuation between our two AC lines. Using this data, we corrected for the difference in signal path length and attenuation by applying an offset in both the phase and the amplitude at the signal generator. Operating the device as a turnstile while using the optimized parameters determined from the 2-gate ratchet measurement led to much flatter, more robust charge pumping plateaus. This method was useful in tuning our device up for optimal charge pumping, and may prove useful to the semiconductor quantum dot community to determine signal attenuation and path differences at the device.

Preventing illegal tobacco and alcohol sales to minors through electronic age-verification devices: a field effectiveness study.

PubMed

Krevor, Brad; Capitman, John A; Oblak, Leslie; Cannon, Joanna B; Ruwe, Mathilda

2003-01-01

Efforts to prohibit the sales of tobacco and alcohol products to minors are widespread. Electronic Age Verification (EAV) devices are one possible means to improve compliance with sales to minors laws. The purpose of this study was to evaluate the implementation and effectiveness of EAV devices in terms of the frequency and accuracy of age verification, as well as to examine the impact of EAV's on the retailer environment. Two study locations were selected: Tallahassee, Florida and Iowa City, Iowa. Retail stores were invited to participate in the study, producing a self-selected experimental group. Stores that did not elect to test the EAV's comprised the comparison group. The data sources included: 1) mystery shopper inspections: two pre- and five post-EAV installation mystery shopper inspections of tobacco and alcohol retailers; 2) retail clerk and manager interviews; and 3) customer interviews. The study found that installing EAV devices with minimal training and encouragement did not increase age verification and underage sales refusal. Surveyed clerks reported positive experiences using the electronic ID readers and customers reported almost no discomfort about being asked to swipe their IDs. Observations from this study support the need for a more comprehensive system for responsible retailing.

Electrical Characterization of Semiconductor Materials and Devices

NASA Astrophysics Data System (ADS)

Deen, M.; Pascal, Fabien

Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

NASA Astrophysics Data System (ADS)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

Accelerated life-test methods and results for implantable electronic devices with adhesive encapsulation.

PubMed

Huang, Xuechen; Denprasert, Petcharat May; Zhou, Li; Vest, Adriana Nicholson; Kohan, Sam; Loeb, Gerald E

2017-09-01

We have developed and applied new methods to estimate the functional life of miniature, implantable, wireless electronic devices that rely on non-hermetic, adhesive encapsulants such as epoxy. A comb pattern board with a high density of interdigitated electrodes (IDE) could be used to detect incipient failure from water vapor condensation. Inductive coupling of an RF magnetic field was used to provide DC bias and to detect deterioration of an encapsulated comb pattern. Diodes in the implant converted part of the received energy into DC bias on the comb pattern. The capacitance of the comb pattern forms a resonant circuit with the inductor by which the implant receives power. Any moisture affects both the resonant frequency and the Q-factor of the resonance of the circuitry, which was detected wirelessly by its effects on the coupling between two orthogonal RF coils placed around the device. Various defects were introduced into the comb pattern devices to demonstrate sensitivity to failures and to correlate these signals with visual inspection of failures. Optimized encapsulation procedures were validated in accelerated life tests of both comb patterns and a functional neuromuscular stimulator under development. Strong adhesive bonding between epoxy and electronic circuitry proved to be necessary and sufficient to predict 1 year packaging reliability of 99.97% for the neuromuscular stimulator.

Realizing one-dimensional quantum and high-frequency transport features in aligned single-walled carbon nanotube ropes

NASA Astrophysics Data System (ADS)

Ncube, Siphephile; Chimowa, George; Chiguvare, Zivayi; Bhattacharyya, Somnath

2014-07-01

The superiority of the electronic transport properties of single-walled carbon nanotube (SWNT) ropes over SWNT mats is verified from low temperature and frequency-dependent transport. The overall change of resistance versus in nanotube mats shows that 3D variable range hopping is the dominant conduction mechanism within the 2-300 K range. The magneto-resistance (MR) is found to be predominantly negative with a parabolic nature, which can also be described by the hopping model. Although the positive upturn of the MR at low temperatures establishes the contribution from quantum interference, the inherent quantum transport in individual tubes is suppressed at elevated temperatures. Therefore, to minimize multi-channel effects from inter-tube interactions and other defects, two-terminal devices were fabricated from aligned SWNT (extracted from a mat) for low temperature transport as well as high-frequency measurements. In contrast to the mat, the aligned ropes exhibit step-like features in the differential conductance within the 80-300 K temperature range. The effects of plasmon propagation, unique to one dimension, were identified in electronic transport as a non-universal power-law dependence of the differential conductance on temperature and source-drain voltage. The complex impedance showed high power transmission capabilities up to 65 GHz as well as oscillations in the frequency range up to 30 GHz. The measurements suggest that aligned SWNT ropes have a realistic potential for high-speed device applications.

A Novel Photonic Clock and Carrier Recovery Device

NASA Technical Reports Server (NTRS)

Yao, X. Steve; Lutes, George; Maleki, Lute

1996-01-01

As data communication rates climb toward ten Gb/s, clock recovery and synchronization become more difficult, if not impossible, using conventional electronic circuits. We present in this article experimental results of a high speed clock and carrier recovery using a novel device called a photonic oscillator that we recently developed in our laboratory. This device is capable of recovering clock signals up to 70 GHz. To recover the clock, the incoming data is injected into the photonic oscillator either through the optical injection port or the electrical injection port. The free running photonic oscillator is tuned to oscillate at a nominal frequency equal to the clock frequency of the incoming data. With the injection of the data, the photonic oscillator will be quickly locked to clock frequency of the data stream while rejecting other frequency components associated with the data. Consequently, the output of the locked photonic oscillator is a continuous periodical wave synchronized with the incoming data or simply the recovered clock. We have demonstrated a clock to spur ratio of more than 60 dB of the recovered clock using this technique. Similar to the clock recovery, the photonic oscillator can be used to recover a high frequency carrier degraded by noise and an improvement of about 50 dB in signal-to-noise ratio was demonstrated. The photonic oscillator has both electrical and optical inputs and outputs and can be directly interfaced with a photonic system without signal conversion. In addition to clock and carrier recovery, the photonic oscillator can also be used for (1) stable high frequency clock signal generation, (2) frequency multiplication, (3) square wave and comb frequency generation, and (4) photonic phase locked loop.

Organic Based Flexible Transistors and Electronic Device

DTIC Science & Technology

2005-05-01

reactive groups that can act as charge carrier traps . 0.0 0.0 V1 ......3..... ... 10 " -.....-." . ;Z 0. - - -1,6 -V* /7VIDS -04O -2.5 10 -1.0 -0.8...of 2.5 kHz in vacuum with pentacene and DHFCO-4T with 7.5 ptm channel length devices. "* Ring oscillator frequencies of 10 kHz in air with pentacene ...similar herringbone packing in DFCO-4T (c) and DPCO-4T (d), respectively, viewed along the long crystallographic axis. Table 1. Charge carrier mobilities (A

Radio frequency diodes and circuits fabricated via adhesion lithography (Conference Presentation)

NASA Astrophysics Data System (ADS)

Georgiadou, Dimitra G.; Semple, James; Wyatt-Moon, Gwenhivir; Anthopoulos, Thomas D.

2016-09-01

The commercial interest in Radio Frequency Identification (RFID) tags keeps growing, as new application sectors, spanning from healthcare to electronic article surveillance (EAS) and personal identification, are constantly emerging for these types of electronic devices. The increasing demand for the so-called "smart labels" necessitates their high throughput manufacturing, and indeed on thin flexible substrates, that will reduce the cost and render them competitive to the currently widely employed barcodes. Adhesion Lithography (a-Lith) is a novel patterning technique that allows the facile high yield fabrication of co-planar large aspect ratio (<100,000) metal electrodes separated by a sub-20 nm gap on large area substrates of any type. Deposition of high mobility semiconductors from their solution at low, compatible with plastic substrates, temperatures and application of specific processing protocols can dramatically improve the performance of the fabricated Schottky diodes. It will be shown that in this manner both organic and inorganic high speed diodes and rectifiers can be obtained, operating at frequencies much higher than the 13.56 MHz benchmark, currently employed in passive RFID tags and near filed communications (NFC). This showcases the universality of this method towards fabricating high speed p- and n-type diodes, irrespective of the substrate, simply based on the extreme downscaling of key device dimensions obtained in these nanoscale structures. The potential for scaling up this technique at low cost, combined with the significant performance optimisation and improved functionality that can be attained through intelligent material selection, render a-Lith unique within the field of plastic electronics.

Generation of Shear Alfvén Waves by Repetitive High Power Microwave Pulses Near the Electron Plasma Frequency - A laboratory study of a ``Virtual Antenna''

NASA Astrophysics Data System (ADS)

Wang, Yuhou; Gekelman, Walter; Pribyl, Patrick; van Compernolle, Bart; Papadopoulos, Konstantinos

2015-11-01

ELF / ULF waves are important in terrestrial radio communications but difficult to launch using ground-based structures due to their enormous wavelengths. In spite of this generation of such waves by field-aligned ionospheric heating modulation was first demonstrated using the HAARP facility. In the future heaters near the equator will be constructed and laboratory experiments on cross-field wave propagation could be key to the program's success. Here we report a detailed laboratory study conducted on the Large Plasma Device (LaPD) at UCLA. In this experiment, ten rapid pulses of high power microwaves (250 kW X-band) near the plasma frequency were launched transverse to the background field, and were modulated at a variable fraction (0.1-1.0) of fci. Along with bulk electron heating and density modification, the microwave pulses generated a population of fast electrons. The field-aligned current carried by the fast electrons acted as an antenna that radiated shear Alfvén waves. It was demonstrated that a controllable arbitrary frequency (f

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

A closed-loop phase-locked interferometer for wide bandwidth position sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fleming, Andrew J., E-mail: Andrew.Fleming@Newcastle.edu.au; Routley, Ben S., E-mail: Ben.Routley@Newcastle.edu.au

This article describes a position sensitive interferometer with closed-loop control of the reference mirror. A calibrated nanopositioner is used to lock the interferometer phase to the most sensitive point in the interferogram. In this configuration, large low-frequency movements of the sensor mirror can be detected from the control signal applied to the nanopositioner and high-frequency short-range signals can be measured directly from the photodiode. It is demonstrated that these two signals are complementary and can be summed to find the total displacement. The resulting interferometer has a number of desirable characteristics: it is optically simple, does not require polarization ormore » modulation to detect the direction of motion, does not require fringe-counting or interpolation electronics, and has a bandwidth equal to that of the photodiode. Experimental results demonstrate the frequency response analysis of a high-speed positioning stage. The proposed instrument is ideal for measuring the frequency response of nanopositioners, electro-optical components, MEMs devices, ultrasonic devices, and sensors such as surface acoustic wave detectors.« less

Skylab electronic technological advancements

NASA Technical Reports Server (NTRS)

Hornback, G. L.

1974-01-01

The present work describes three electronic devices designed for use in the Skylab airlock module: the teleprinter system, the quartz crystal microbalance contamination monitor (QCM), and the speaker. Design considerations, operation, characteristics, and system development are described for these systems, with accompanying diagrams, graphs, and photographs. The teleprinter is a thermal dot printer used to produce hard copy messages by electrically heating print elements in contact with heat-sensitive paper. The QCM was designed to estimate contamination buildup on optical surfaces of the earth resources experiment package. A vibrating quartz crystal is used as a microbalance relating deposited mass to shifts in the crystal's resonant frequency. Audio devices provide communication between crew members and between crew and STDN, and also provide audible alarms, via the caution and warning system, of out-of-limit-conditions.

Mobility-dependent low-frequency noise in graphene field-effect transistors.

PubMed

Zhang, Yan; Mendez, Emilio E; Du, Xu

2011-10-25

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter α(H) is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of α(H) is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.

Vortex spin-torque oscillator stabilized by phase locked loop using integrated circuits

NASA Astrophysics Data System (ADS)

Kreissig, Martin; Lebrun, R.; Protze, F.; Merazzo-Jaimes, K.; Hem, J.; Vila, L.; Ferreira, R.; Cyrille, M.-C.; Ellinger, F.; Cros, V.; Ebels, U.; Bortolotti, P.

2017-05-01

Spin-torque nano-oscillators (STO) are candidates for the next technological implementation of spintronic devices in commercial electronic systems. For use in microwave applications, improving the noise figures by efficient control of their phase dynamics is a mandatory requirement. In order to achieve this, we developed a compact phase locked loop (PLL) based on custom integrated circuits (ICs) and demonstrate that it represents an efficient way to reduce the phase noise level of a vortex based STO. The advantage of our approach to phase stabilize STOs is that our compact system is highly reconfigurable e.g. in terms of the frequency divider ratio N, RF gain and loop gain. This makes it robust against device to device variations and at the same time compatible with a large range of STOs. Moreover, by taking advantage of the natural highly non-isochronous nature of the STO, the STO frequency can be easily controlled by e.g. changing the divider ratio N.

Engineering optical properties using plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Tamma, Venkata Ananth

Plasmonic nanostructures can be engineered to take on unusual optical properties not found in natural materials. The optical responses of plasmonic materials are functions of the structural parameters and symmetry of the nanostructures, material parameters of the nanostructure and its surroundings and the incidence angle, frequency and polarization state of light. The scattering and hence the visibility of an object could be reduced by coating it with a plasmonic material. In this thesis, presented is an optical frequency scattering cancelation device composed of a silicon nanorod coated by a plasmonic gold nanostructure. The principle of operation was theoretically analyzed using Mie theory and the device design was verified by extensive numerical simulations. The device was fabricated using a combination of nanofabrication techniques such as electron beam lithography and focused ion beam milling. The optical responses of the scattering cancelation device and a control sample of bare silicon rod were directly visualized using near-field microscopy coupled with heterodyne interferometric detection. The experimental results were analyzed and found to match very well with theoretical prediction from numerical simulations thereby validating the design principles and our implementation. Plasmonic nanostructures could be engineered to exhibit unique optical properties such as Fano resonance characterized by narrow asymmetrical lineshape. We present dynamic tuning and symmetry lowering of Fano resonances in plasmonic nanostructures fabricated on flexible substrates. The tuning of Fano resonance was achieved by application of uniaxial mechanical stress. The design of the nanostructures was facilitated by extensive numerical simulations and the symmetry lowering was analyzed using group theoretical methods. The nanostructures were fabricated using electron beam lithography and optically characterized for various mechanical stress. The experimental results were in good agreement with the numerical simulations. The mechanically tunable plasmonic nanostructure could serve as a platform for dynamically tunable nanophotonic devices such as sensors and tunable filters.

Design of active temperature compensated composite free-free beam MEMS resonators in a standard process

NASA Astrophysics Data System (ADS)

Xereas, George; Chodavarapu, Vamsy P.

2014-03-01

Frequency references are used in almost every modern electronic device including mobile phones, personal computers, and scientific and medical instrumentation. With modern consumer mobile devices imposing stringent requirements of low cost, low complexity, compact system integration and low power consumption, there has been significant interest to develop batch-manufactured MEMS resonators. An important challenge for MEMS resonators is to match the frequency and temperature stability of quartz resonators. We present 1MHz and 20MHz temperature compensated Free-Free beam MEMS resonators developed using PolyMUMPS, which is a commercial multi-user process available from MEMSCAP. We introduce a novel temperature compensation technique that enables high frequency stability over a wide temperature range. We used three strategies: passive compensation by using a structural gold (Au) layer on the resonator, active compensation through using a heater element, and a Free-Free beam design that minimizes the effects of thermal mismatch between the vibrating structure and the substrate. Detailed electro-mechanical simulations were performed to evaluate the frequency response and Quality Factor (Q). Specifically, for the 20MHz device, a Q of 10,000 was obtained for the passive compensated design. Finite Element Modeling (FEM) simulations were used to evaluate the Temperature Coefficient of frequency (TCf) of the resonators between -50°C and 125°C which yielded +0.638 ppm/°C for the active compensated, compared to -1.66 ppm/°C for the passively compensated design and -8.48 ppm/°C for uncompensated design for the 20MHz device. Electro-thermo-mechanical simulations showed that the heater element was capable of increasing the temperature of the resonators by approximately 53°C with an applied voltage of 10V and power consumption of 8.42 mW.

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Carbon Nanotube Devices for GHz to THz Applications

NASA Astrophysics Data System (ADS)

Burke, Peter

2005-03-01

In this talk I will present an overview of the high-frequency applications of carbon nanotubes, one realization of nano-electronic devices, and where the challenges and opportunities lie in this new field. Specifically, I will first discuss the passive RF circuit models of one-dimensional nanostructures as interconnects[1]. Next, I will discuss circuit models of the ac performance of active 1d transistor structures, leading to the prediction that THz cutoff frequencies should be possible[2]. We recently demonstrated the operation of nanotube transistors at 2.6 GHz[3]. Third, I discuss the radiation properties of 1d wires, which could form antennas linking the nanoworld to the macroworld[4]. This could completely remove the requirements for lithographically defined contacts to nanotube and nanowire devices, one of the greatest unsolved problems in nanotechnology. [1] P.J. Burke "An RF Circuit Model for Carbon Nanotubes" IEEE Transactions on Nanotechnology 2(1), 55-58 (2003). [2] P.J. Burke, ``AC Performance of Nanoelectronics: Towards a Ballistic THz Nanotube Transistor'' Solid State Electronics, 48(10), 1981-1986 (2004). [3] Shengdong Li, Zhen Yu, Sheng-Fen Yeng, W.C. Tang, Peter J. Burke, ``Carbon Nanotube Transistor Operation at 2.6 GHz'' Nano Letters, 4(4), 753-756 (2004). [4] Peter J. Burke, Shengdong Li, Zhen Yu ''Quantitative theory of nanowire and nanotube antenna performance,'' http://xxx.lanl.gov/abs/cond-mat/0408418cond-mat/0408418 (2004).

Anisotropy of electromagnetically induced left-handedness in atomic three-level media based upon bianisotropic polarizabilities and tensor character

NASA Astrophysics Data System (ADS)

Krowne, Clifford M.

2008-05-01

A three-level atomic system, configured as either a gaseous medium or a solid state material, with a driving field establishing a Rabi frequency of control, is tested by a probe field. The medium has bianisotropic microscopic polarizability and magnetizability, from which the permittivity and permeability tensors are derived. Non-isotropy and polarization dependence for left-handedness (negative index of refraction) is demonstrated through examination of tensor components in the detuning frequency spectrum. These results have important implications for use in optical or electronic devices.

Magnetic nano-oscillator driven by pure spin current.

PubMed

Demidov, Vladislav E; Urazhdin, Sergei; Ulrichs, Henning; Tiberkevich, Vasyl; Slavin, Andrei; Baither, Dietmar; Schmitz, Guido; Demokritov, Sergej O

2012-12-01

With the advent of pure-spin-current sources, spin-based electronic (spintronic) devices no longer require electrical charge transfer, opening new possibilities for both conducting and insulating spintronic systems. Pure spin currents have been used to suppress noise caused by thermal fluctuations in magnetic nanodevices, amplify propagating magnetization waves, and to reduce the dynamic damping in magnetic films. However, generation of coherent auto-oscillations by pure spin currents has not been achieved so far. Here we demonstrate the generation of single-mode coherent auto-oscillations in a device that combines local injection of a pure spin current with enhanced spin-wave radiation losses. Counterintuitively, radiation losses enable excitation of auto-oscillation, suppressing the nonlinear processes that prevent auto-oscillation by redistributing the energy between different modes. Our devices exhibit auto-oscillations at moderate current densities, at a microwave frequency tunable over a wide range. These findings suggest a new route for the implementation of nanoscale microwave sources for next-generation integrated electronics.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin

NASA Astrophysics Data System (ADS)

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Chad Webb, R.; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A.

2014-09-01

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or ‘epidermal’, photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

PubMed

Mishchenko, A; Tu, J S; Cao, Y; Gorbachev, R V; Wallbank, J R; Greenaway, M T; Morozov, V E; Morozov, S V; Zhu, M J; Wong, S L; Withers, F; Woods, C R; Kim, Y-J; Watanabe, K; Taniguchi, T; Vdovin, E E; Makarovsky, O; Fromhold, T M; Fal'ko, V I; Geim, A K; Eaves, L; Novoselov, K S

2014-10-01

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin.

PubMed

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Webb, R Chad; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A

2014-09-19

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or 'epidermal', photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

An electronic implementation of amoeba anticipation

NASA Astrophysics Data System (ADS)

Ziegler, Martin; Ochs, Karlheinz; Hansen, Mirko; Kohlstedt, Hermann

2014-02-01

In nature, the capability of memorizing environmental changes and recalling past events can be observed in unicellular organisms like amoebas. Pershin and Di Ventra have shown that such learning behavior can be mimicked in a simple memristive circuit model consisting of an LC (inductance capacitance) contour and a memristive device. Here, we implement this model experimentally by using an Ag/TiO2- x /Al memristive device. A theoretical analysis of the circuit is used to gain insight into the functionality of this model and to give advice for the circuit implementation. In this respect, the transfer function, resonant frequency, and damping behavior for a varying resistance of the memristive device are discussed in detail.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

MCTs and IGBTs - A comparison of performance in power electronic circuits

NASA Technical Reports Server (NTRS)

Sul, S. K.; Profumo, F.; Cho, G. H.; Lipo, T. A.

1989-01-01

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

NASA Astrophysics Data System (ADS)

Alarcón-Lladó, Esther; Brazzini, Tommaso; Ager, Joel W.

2016-06-01

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the (E 1, A 1) longitudinal optical (LO) near 590 cm-1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap (E g  =  0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer.

Dual-Phase Lock-In Amplifier Based on FPGA for Low-Frequencies Experiments

PubMed Central

Macias-Bobadilla, Gonzalo; Rodríguez-Reséndiz, Juvenal; Mota-Valtierra, Georgina; Soto-Zarazúa, Genaro; Méndez-Loyola, Maurino; Garduño-Aparicio, Mariano

2016-01-01

Photothermal techniques allow the detection of characteristics of material without invading it. Researchers have developed hardware for some specific Phase and Amplitude detection (Lock-In Function) applications, eliminating space and unnecessary electronic functions, among others. This work shows the development of a Digital Lock-In Amplifier based on a Field Programmable Gate Array (FPGA) for low-frequency applications. This system allows selecting and generating the appropriated frequency depending on the kind of experiment or material studied. The results show good frequency stability in the order of 1.0 × 10−9 Hz, which is considered good linearity and repeatability response for the most common Laboratory Amplitude and Phase Shift detection devices, with a low error and standard deviation. PMID:26999138

Dual-Phase Lock-In Amplifier Based on FPGA for Low-Frequencies Experiments.

PubMed

Macias-Bobadilla, Gonzalo; Rodríguez-Reséndiz, Juvenal; Mota-Valtierra, Georgina; Soto-Zarazúa, Genaro; Méndez-Loyola, Maurino; Garduño-Aparicio, Mariano

2016-03-16

Photothermal techniques allow the detection of characteristics of material without invading it. Researchers have developed hardware for some specific Phase and Amplitude detection (Lock-In Function) applications, eliminating space and unnecessary electronic functions, among others. This work shows the development of a Digital Lock-In Amplifier based on a Field Programmable Gate Array (FPGA) for low-frequency applications. This system allows selecting and generating the appropriated frequency depending on the kind of experiment or material studied. The results show good frequency stability in the order of 1.0 × 10(-9) Hz, which is considered good linearity and repeatability response for the most common Laboratory Amplitude and Phase Shift detection devices, with a low error and standard deviation.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NASA Astrophysics Data System (ADS)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-01

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

PubMed

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-15

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Development of a Mechanical Scanning Device With High-Frequency Ultrasound Transducer for Ultrasonic Capsule Endoscopy.

PubMed

Wang, Xingying; Seetohul, Vipin; Chen, Ruimin; Zhang, Zhiqiang; Qian, Ming; Shi, Zhehao; Yang, Ge; Mu, Peitian; Wang, Congzhi; Huang, Zhihong; Zhou, Qifa; Zheng, Hairong; Cochran, Sandy; Qiu, Weibao

2017-09-01

Wireless capsule endoscopy has opened a new era by enabling remote diagnostic assessment of the gastrointestinal tract in a painless procedure. Video capsule endoscopy is currently commercially available worldwide. However, it is limited to visualization of superficial tissue. Ultrasound (US) imaging is a complementary solution as it is capable of acquiring transmural information from the tissue wall. This paper presents a mechanical scanning device incorporating a high-frequency transducer specifically as a proof of concept for US capsule endoscopy (USCE), providing information that may usefully assist future research. A rotary solenoid-coil-based motor was employed to rotate the US transducer with sectional electronic control. A set of gears was used to convert the sectional rotation to circular rotation. A single-element focused US transducer with 39-MHz center frequency was used for high-resolution US imaging, connected to an imaging platform for pulse generation and image processing. Key parameters of US imaging for USCE applications were evaluated. Wire phantom imaging and tissue phantom imaging have been conducted to evaluate the performance of the proposed method. A porcine small intestine specimen was also used for imaging evaluation in vitro. Test results demonstrate that the proposed device and rotation mechanism are able to offer good image resolution ( [Formula: see text]) of the lumen wall, and they, therefore, offer a viable basis for the fabrication of a USCE device.

High-power broadband plasma maser with magnetic self-insulation

NASA Astrophysics Data System (ADS)

Litvin, Vitaliy O.; Loza, Oleg T.

2018-01-01

Presented in this paper are the results of a particle-in-cell modelling of a novel high-power microwave (HPM) source which combines the properties of two devices. The first prototype is a magnetically insulated transmission line oscillator (MILO), an HPM self-oscillator which does not need an external magnetic field and irradiates a narrow spectrum depending on its iris-loaded slow-wave structure. The second prototype is a plasma maser, a Cherenkov HPM amplifier driven by a high-current relativistic electron beam propagating in a strong external magnetic field in plasma which acts as a slow-wave structure. The radiation frequency of plasma masers mainly depends on an easily variable plasma concentration; hence, their spectrum may overlap a few octaves. The plasma-based HPM device described in this paper operates without an external magnetic field: it looks like an MILO in which the iris-loaded slow-wave structure is substituted by a hollow plasma tube. The small pulse duration of ˜1.5 ns prevents a feedback rise in the 20-cm long generation section so that the device operates as a noise amplifier. Unlike conventional ultra wideband generators, the spectrum depends not only on the pulse duration but mainly on plasma, so the operation frequency of the device ranges within 12 GHz. For irradiated frequencies above 2 GHz, the total pulse energy efficiency of 7% is demonstrated at the HPM power level ˜1 GW.

Collaborative research in tunneling and field emission pumped surface wave local oscillators and amplifiers for infrared and submillimeter wavelengths under director's discretionary fund

NASA Technical Reports Server (NTRS)

Gustafson, T. K.

1982-01-01

Progress is reported in work towards the development of surface wave sources for the infrared and sub-millimeter portion of the spectrum to be based upon electron pumping by tunneling electrons in metal-barrier-metal or metal-barrier-semiconductor devices. Tunneling phenomena and the coupling of radiation to tunnel junctions were studied. The propagation characteristics of surface electro-magnetic modes in metal-insulator-p(++) semiconductor structures as a function of frequency were calculated. A model for the gain process based upon Tucker's formalism was developed and used to estimate what low frequency gain might be expected from such structures. The question of gain was addressed from a more fundamental viewpoint using the method of Lasher and Stern.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Adiabatic quantum pump in a zigzag graphene nanoribbon junction

NASA Astrophysics Data System (ADS)

Zhang, Lin

2015-11-01

The adiabatic electron transport is theoretically studied in a zigzag graphene nanoribbon (ZGNR) junction with two time-dependent pumping electric fields. By modeling a ZGNR p-n junction and applying the Keldysh Green’s function method, we find that a pumped charge current is flowing in the device at a zero external bias, which mainly comes from the photon-assisted tunneling process and the valley selection rule in an even-chain ZGNR junction. The pumped charge current and its ON and OFF states can be efficiently modulated by changing the system parameters such as the pumping frequency, the pumping phase difference, and the Fermi level. A ferromagnetic ZGNR device is also studied to generate a pure spin current and a fully polarized spin current due to the combined spin pump effect and the valley valve effect. Our finding might pave the way to manipulate the degree of freedom of electrons in a graphene-based electronic device. Project supported by the National Natural Science Foundation of China (Grant No. 110704033), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2010416), and the Natural Science Foundation for Colleges and Universities in Jiangsu Province, China (Grant No. 13KJB140005).

The Software Element of the NASA Portable Electronic Device Radiated Emissions Investigation

NASA Technical Reports Server (NTRS)

Koppen, Sandra V.; Williams, Reuben A. (Technical Monitor)

2002-01-01

NASA Langley Research Center's (LaRC) High Intensity Radiated Fields Laboratory (HIRF Lab) recently conducted a series of electromagnetic radiated emissions tests under a cooperative agreement with Delta Airlines and an interagency agreement with the FAA. The frequency spectrum environment at a commercial airport was measured on location. The environment survey provides a comprehensive picture of the complex nature of the electromagnetic environment present in those areas outside the aircraft. In addition, radiated emissions tests were conducted on portable electronic devices (PEDs) that may be brought onboard aircraft. These tests were performed in both semi-anechoic and reverberation chambers located in the HIRF Lab. The PEDs included cell phones, laptop computers, electronic toys, and family radio systems. The data generated during the tests are intended to support the research on the effect of radiated emissions from wireless devices on aircraft systems. Both tests systems relied on customized control and data reduction software to provide test and instrument control, data acquisition, a user interface, real time data reduction, and data analysis. The software executed on PC's running MS Windows 98 and 2000, and used Agilent Pro Visual Engineering Environment (VEE) development software, Common Object Model (COM) technology, and MS Excel.

A novel thermal acoustic device based on porous graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Lu-Qi; Liu, Ying; Ju, Zhen-Yi

2016-01-15

A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser’s irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration,more » low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.« less

TIME-INTERVAL MEASURING DEVICE

DOEpatents

Gross, J.E.

1958-04-15

An electronic device for measuring the time interval between two control pulses is presented. The device incorporates part of a previous approach for time measurement, in that pulses from a constant-frequency oscillator are counted during the interval between the control pulses. To reduce the possible error in counting caused by the operation of the counter gating circuit at various points in the pulse cycle, the described device provides means for successively delaying the pulses for a fraction of the pulse period so that a final delay of one period is obtained and means for counting the pulses before and after each stage of delay during the time interval whereby a plurality of totals is obtained which may be averaged and multplied by the pulse period to obtain an accurate time- Interval measurement.

Genotoxic and carcinogenic effects of non-ionizing electromagnetic fields.

PubMed

Kocaman, Adem; Altun, Gamze; Kaplan, Arife Ahsen; Deniz, Ömür Gülsüm; Yurt, Kıymet Kübra; Kaplan, Süleyman

2018-05-01

New technologies in electronics and communications are continually emerging. An increasing use of these electronic devices such as mobile phone, computer, wireless fidelity connectors or cellular towers is raising questions concerning whether they have an adverse effect on the body. Exposure to electromagnetic fields (EMF) is frequently suggested to have adverse health effects on humans and other organisms. This idea has been reported in many studies. In contrast, the therapeutic effects of EMF on different organs have also been reported. Research findings are inconsistent. This has given rise to very profound discrepancies. The duration and frequency of mobile phone calls and the association observed with various health effects has raised serious concerns due to the frequency with which these devices are used and the way they are held close to the head. The present review assesses the results of in vitro, in vivo, experimental, and epidemiological studies. The purpose of the study is to assess data concerning the carcinogenic and genotoxic effects of non-ionizing EMF. The major genotoxic and carcinogenic effects of EMF, divided into subsections as low frequency effects and radiofrequency effects, were reviewed. The inconsistent results between similar studies and the same research groups have made it very difficult to make any comprehensive interpretation. However, evaluation of current studies suggests that EMF may represent a serious source of concern and may be hazardous to living organisms. Copyright © 2018 Elsevier Inc. All rights reserved.

A new application of electrical impedance spectroscopy for measuring glucose metabolism: a phantom study

NASA Astrophysics Data System (ADS)

Dhurjaty, Sreeram; Qiu, Yuchen; Tan, Maxine; Liu, Hong; Zheng, Bin

2015-03-01

Glucose metabolism relates to biochemical processes in living organisms and plays an important role in diabetes and cancer-metastasis. Although many methods are available for measuring glucose metabolism-activities, from simple blood tests to positron emission tomography, currently there is no robust and affordable device that enables monitoring of glucose levels in real-time. In this study we tested feasibility of applying a unique resonance-frequency based electronic impedance spectroscopy (REIS) device that has been, recently developed to measure and monitor glucose metabolism levels using a phantom study. In this new testing model, a multi-frequency electrical signal sequence is applied and scanned through the subject. When the positive reactance of an inductor inside the device cancels out the negative reactance of the capacitance of the subject, the electrical impedance reaches a minimum value and this frequency is defined as the resonance frequency. The REIS system has a 24-bit analog-to-digital signal convertor and a frequency-resolution of 100Hz. In the experiment, two probes are placed inside a 100cc container initially filled with distilled water. As we gradually added liquid-glucose in increments of 1cc (250mg), we measured resonance frequencies and minimum electrical signal values (where A/D was normalized to a full scale of 1V). The results showed that resonance frequencies monotonously decreased from 243kHz to 178kHz, while the minimum voltages increased from 405mV to 793mV as the added amount of glucose increased from 0 to 5cc. The study demonstrated the feasibility of applying this new REIS technology to measure and/or monitor glucose levels in real-time in future.

Validation of a hybrid electromagnetic-piezoelectric vibration energy harvester

NASA Astrophysics Data System (ADS)

Edwards, Bryn; Hu, Patrick A.; Aw, Kean C.

2016-05-01

This paper presents a low frequency vibration energy harvester with contact based frequency up-conversion and hybrid electromagnetic-piezoelectric transduction. An electromagnetic generator is proposed as a power source for low power wearable electronic devices, while a second piezoelectric generator is investigated as a potential power source for a power conditioning circuit for the electromagnetic transducer output. Simulations and experiments are conducted in order to verify the behaviour of the device under harmonic as well as wide-band excitations across two key design parameters—the length of the piezoelectric beam and the excitation frequency. Experimental results demonstrated that the device achieved a power output between 25.5 and 34 μW at an root mean squared (rms) voltage level between 16 and 18.5 mV for the electromagnetic transducer in the excitation frequency range of 3-7 Hz, while the output power of the piezoelectric transducer ranged from 5 to 10.5 μW with a minimum peak-to-peak output voltage of 6 V. A multivariate model validation was performed between experimental and simulation results under wide-band excitation in terms of the rms voltage outputs of the electromagnetic and piezoelectric transducers, as well as the peak-to-peak voltage output of the piezoelectric transducer, and it is found that the experimental data fit the model predictions with a minimum probability of 63.4% across the parameter space.

A Low Cost Traveling Wave Tube for Wireless Communications

NASA Technical Reports Server (NTRS)

Vancil, Bernard Kenneth; Wintucky, Edwin G.; Williams, W. D. (Technical Monitor)

2002-01-01

Demand for high data rate wireless communications is pushing up amplifier power, bandwidth and frequency requirements. Some systems are using vacuum electron devices again because solid-state power amplifiers are not able to efficiently meet the new requirements. The traveling wave tube is the VED of choice because of its excellent broadband capability as well as high power efficiency and frequency. But TWTs are very expensive on a per watt basis below about 200 watts of output power. We propose a new traveling wave tube that utilizes cathode ray tube construction technology and electrostatic focusing. We believe the tube can be built in quantity for under $1,000 each. We discuss several traveling wave tube slow wave circuits that lend themselves to the new construction. We will present modeling results and data on prototype devices.

A pulse-tube refrigerator using variable-resistance orifice

NASA Astrophysics Data System (ADS)

Huang, B. J.; Sun, B. W.

2003-01-01

In the present study, we propose a new design of orifice pulse-tube refrigerator (VROPT) using a variable-resistance valve to replace the conventional orifice. The variable-resistance orifice (VRO) is basically a high-speed solenoidal valve similar to the fuel jet device widely used in automobile engines. By changing the frequency and periods of ON and OFF of the valve through an electronic device, we can change the flow resistance of the VRO. This thus provides a possibility for an OPT to be controlled on-line during operation. From the results obtained in the present study, we have shown that VROPT is able to achieve on-line control by regulating the duty cycle d or frequency fv of the VRO. We also show that VROPT will not loss its thermal performance as compared to conventional OPT.

Exciting Alfven Waves using Modulated Electron Heating by High Power Microwaves

NASA Astrophysics Data System (ADS)

Wang, Yuhou; Gekelman, Walter; Pribyl, Patrick; van Compernolle, Bart; Papadopoulos, Konstantinos

2014-10-01

Experiments exploring the physics of ionospheric modification with intense perpendicular propagating waves (k-> ⊥B->0) on the Large Plasma Device (LaPD) at UCLA have been upgraded with the addition of a high power rapidly pulsed microwave source. The plasma is irradiated with ten pulses (250 kW X-band) near the upper-hybrid frequency. The pulses are modulated at a frequency of a fraction (0.1-1.0) of fci (ion cyclotron frequency). Based on a previous single-pulse experiment, the modulated electron heating may drive a large amplitude shear Alfvén wave (f

Precision Electron Density Measurements in the SSX MHD Wind Tunnel

NASA Astrophysics Data System (ADS)

Suen-Lewis, Emma M.; Barbano, Luke J.; Shrock, Jaron E.; Kaur, Manjit; Schaffner, David A.; Brown, Michael R.

2017-10-01

We characterize fluctuations of the line averaged electron density of Taylor states produced by the magnetized coaxial plasma gun of the SSX device using a 632.8 nm HeNe laser interferometer. The analysis method uses the electron density dependence of the refractive index of the plasma to determine the electron density of the Taylor states. Typical magnetic field and density values in the SSX device approach about B ≅ 0.3 T and n = 0 . 4 ×1016 cm-3 . Analysis is improved from previous density measurement methods by developing a post-processing method to remove relative phase error between interferometer outputs and to account for approximately linear phase drift due to low-frequency mechanical vibrations of the interferometer. Precision density measurements coupled with local measurements of the magnetic field will allow us to characterize the wave composition of SSX plasma via density vs. magnetic field correlation analysis, and compare the wave composition of SSX plasma with that of the solar wind. Preliminary results indicate that density and magnetic field appear negatively correlated. Work supported by DOE ARPA-E ALPHA program.

Surface Acoustic Wave Study of Exciton Condensation in Bilayer Quantum Hall Systems

NASA Astrophysics Data System (ADS)

Pollanen, J.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.

In bilayer two-dimensional electron systems (2DES) in GaAs a strongly correlated many-electron state forms at low temperature and high magnetic field when the total electron density nT becomes equal to the degeneracy of a single spin split Landau level. This state corresponds to a total filling factor νT = 1 and can be described in terms of pseudospin ferromagnetism, or equivalently, Bose condensation of bilayer excitons. We have simultaneously measured magneto-transport and the propagation of pulsed surface acoustic waves (SAWs) at a frequency of 747 MHz to explore the phase transition between two independent layers at νT = 1 / 2 + 1 / 2 and the correlated state at νT = 1 in a high quality double quantum well device. We tune through this transition by varying the total electron density in our device with front and backside electrostatic gates. We acknowledge funding provided by the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center (NFS Grant PHY-1125565) with support of the Gordon and Betty Moore Foundation (GBMF-12500028).

Harvesting Low-Frequency (<5 Hz) Irregular Mechanical Energy: A Possible Killer Application of Triboelectric Nanogenerator.

PubMed

Zi, Yunlong; Guo, Hengyu; Wen, Zhen; Yeh, Min-Hsin; Hu, Chenguo; Wang, Zhong Lin

2016-04-26

Electromagnetic generators (EMGs) and triboelectric nanogenerators (TENGs) are the two most powerful approaches for harvesting ambient mechanical energy, but the effectiveness of each depends on the triggering frequency. Here, after systematically comparing the performances of EMGs and TENGs under low-frequency motion (<5 Hz), we demonstrated that the output performance of EMGs is proportional to the square of the frequency, while that of TENGs is approximately in proportion to the frequency. Therefore, the TENG has a much better performance than that of the EMG at low frequency (typically 0.1-3 Hz). Importantly, the extremely small output voltage of the EMG at low frequency makes it almost inapplicable to drive any electronic unit that requires a certain threshold voltage (∼0.2-4 V), so that most of the harvested energy is wasted. In contrast, a TENG has an output voltage that is usually high enough (>10-100 V) and independent of frequency so that most of the generated power can be effectively used to power the devices. Furthermore, a TENG also has advantages of light weight, low cost, and easy scale up through advanced structure designs. All these merits verify the possible killer application of a TENG for harvesting energy at low frequency from motions such as human motions for powering small electronics and possibly ocean waves for large-scale blue energy.

Probing organic field effect transistors in situ during operation using SFG.

PubMed

Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

2006-05-24

In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

Nanoscale electron manipulation in metals with intense THz electric fields

NASA Astrophysics Data System (ADS)

Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

2018-03-01

Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

Real-Time Load-Side Control of Electric Power Systems

NASA Astrophysics Data System (ADS)

Zhao, Changhong

Two trends are emerging from modern electric power systems: the growth of renewable (e.g., solar and wind) generation, and the integration of information technologies and advanced power electronics. The former introduces large, rapid, and random fluctuations in power supply, demand, frequency, and voltage, which become a major challenge for real-time operation of power systems. The latter creates a tremendous number of controllable intelligent endpoints such as smart buildings and appliances, electric vehicles, energy storage devices, and power electronic devices that can sense, compute, communicate, and actuate. Most of these endpoints are distributed on the load side of power systems, in contrast to traditional control resources such as centralized bulk generators. This thesis focuses on controlling power systems in real time, using these load side resources. Specifically, it studies two problems. (1) Distributed load-side frequency control: We establish a mathematical framework to design distributed frequency control algorithms for flexible electric loads. In this framework, we formulate a category of optimization problems, called optimal load control (OLC), to incorporate the goals of frequency control, such as balancing power supply and demand, restoring frequency to its nominal value, restoring inter-area power flows, etc., in a way that minimizes total disutility for the loads to participate in frequency control by deviating from their nominal power usage. By exploiting distributed algorithms to solve OLC and analyzing convergence of these algorithms, we design distributed load-side controllers and prove stability of closed-loop power systems governed by these controllers. This general framework is adapted and applied to different types of power systems described by different models, or to achieve different levels of control goals under different operation scenarios. We first consider a dynamically coherent power system which can be equivalently modeled with a single synchronous machine. We then extend our framework to a multi-machine power network, where we consider primary and secondary frequency controls, linear and nonlinear power flow models, and the interactions between generator dynamics and load control. (2) Two-timescale voltage control: The voltage of a power distribution system must be maintained closely around its nominal value in real time, even in the presence of highly volatile power supply or demand. For this purpose, we jointly control two types of reactive power sources: a capacitor operating at a slow timescale, and a power electronic device, such as a smart inverter or a D-STATCOM, operating at a fast timescale. Their control actions are solved from optimal power flow problems at two timescales. Specifically, the slow-timescale problem is a chance-constrained optimization, which minimizes power loss and regulates the voltage at the current time instant while limiting the probability of future voltage violations due to stochastic changes in power supply or demand. This control framework forms the basis of an optimal sizing problem, which determines the installation capacities of the control devices by minimizing the sum of power loss and capital cost. We develop computationally efficient heuristics to solve the optimal sizing problem and implement real-time control. Numerical experiments show that the proposed sizing and control schemes significantly improve the reliability of voltage control with a moderate increase in cost.

TECHNICAL NOTE: Portable audio electronics for impedance-based measurements in microfluidics

NASA Astrophysics Data System (ADS)

Wood, Paul; Sinton, David

2010-08-01

We demonstrate the use of audio electronics-based signals to perform on-chip electrochemical measurements. Cell phones and portable music players are examples of consumer electronics that are easily operated and are ubiquitous worldwide. Audio output (play) and input (record) signals are voltage based and contain frequency and amplitude information. A cell phone, laptop soundcard and two compact audio players are compared with respect to frequency response; the laptop soundcard provides the most uniform frequency response, while the cell phone performance is found to be insufficient. The audio signals in the common portable music players and laptop soundcard operate in the range of 20 Hz to 20 kHz and are found to be applicable, as voltage input and output signals, to impedance-based electrochemical measurements in microfluidic systems. Validated impedance-based measurements of concentration (0.1-50 mM), flow rate (2-120 µL min-1) and particle detection (32 µm diameter) are demonstrated. The prevailing, lossless, wave audio file format is found to be suitable for data transmission to and from external sources, such as a centralized lab, and the cost of all hardware (in addition to audio devices) is ~10 USD. The utility demonstrated here, in combination with the ubiquitous nature of portable audio electronics, presents new opportunities for impedance-based measurements in portable microfluidic systems.

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

NASA Astrophysics Data System (ADS)

Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

2017-06-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

NASA Astrophysics Data System (ADS)

Oukacha, Hassan

The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of circulator shows how crucial this device is to many industries and the need for smaller, cost effective RF components.

NOTE: A method for controlling image acquisition in electronic portal imaging devices

NASA Astrophysics Data System (ADS)

Glendinning, A. G.; Hunt, S. G.; Bonnett, D. E.

2001-02-01

Certain types of camera-based electronic portal imaging devices (EPIDs) which initiate image acquisition based on sensing a change in video level have been observed to trigger unreliably at the beginning of dynamic multileaf collimation sequences. A simple, novel means of controlling image acquisition with an Elekta linear accelerator (Elekta Oncology Systems, Crawley, UK) is proposed which is based on illumination of a photodetector (ORP-12, Silonex Inc., Plattsburgh, NY, USA) by the electron gun of the accelerator. By incorporating a simple trigger circuit it is possible to derive a beam on/off status signal which changes at least 100 ms before any dose is measured by the accelerator. The status signal does not return to the beam-off state until all dose has been delivered and is suitable for accelerator pulse repetition frequencies of 50-400 Hz. The status signal is thus a reliable means of indicating the initiation and termination of radiation exposure, and thus controlling image acquisition of such EPIDs for this application.

Electronically Tunable Differential Integrator: Linear Voltage Controlled Quadrature Oscillator.

PubMed

Nandi, Rabindranath; Pattanayak, Sandhya; Venkateswaran, Palaniandavar; Das, Sagarika

2015-01-01

A new electronically tunable differential integrator (ETDI) and its extension to voltage controlled quadrature oscillator (VCQO) design with linear tuning law are proposed; the active building block is a composite current feedback amplifier with recent multiplication mode current conveyor (MMCC) element. Recently utilization of two different kinds of active devices to form a composite building block is being considered since it yields a superior functional element suitable for improved quality circuit design. The integrator time constant (τ) and the oscillation frequency (ω o ) are tunable by the control voltage (V) of the MMCC block. Analysis indicates negligible phase error (θ e ) for the integrator and low active ω o -sensitivity relative to the device parasitic capacitances. Satisfactory experimental verifications on electronic tunability of some wave shaping applications by the integrator and a double-integrator feedback loop (DIFL) based sinusoid oscillator with linear f o variation range of 60 KHz~1.8 MHz at low THD of 2.1% are verified by both simulation and hardware tests.

UV-LIGA microfabrication process for sub-terahertz waveguides utilizing multiple layered SU-8 photoresist

NASA Astrophysics Data System (ADS)

Malekabadi, Ali; Paoloni, Claudio

2016-09-01

A microfabrication process based on UV LIGA (German acronym of lithography, electroplating and molding) is proposed for the fabrication of relatively high aspect ratio sub-terahertz (100-1000 GHz) metal waveguides, to be used as a slow wave structure in sub-THz vacuum electron devices. The high accuracy and tight tolerances required to properly support frequencies in the sub-THz range can be only achieved by a stable process with full parameter control. The proposed process, based on SU-8 photoresist, has been developed to satisfy high planar surface requirements for metal sub-THz waveguides. It will be demonstrated that, for a given thickness, it is more effective to stack a number of layers of SU-8 with lower thickness rather than using a single thick layer obtained at lower spin rate. The multiple layer approach provides the planarity and the surface quality required for electroforming of ground planes or assembly surfaces and for assuring low ohmic losses of waveguides. A systematic procedure is provided to calculate soft and post-bake times to produce high homogeneity SU-8 multiple layer coating as a mold for very high quality metal waveguides. A double corrugated waveguide designed for 0.3 THz operating frequency, to be used in vacuum electronic devices, was fabricated as test structure. The proposed process based on UV LIGA will enable low cost production of high accuracy sub-THz 3D waveguides. This is fundamental for producing a new generation of affordable sub-THz vacuum electron devices, to fill the technological gap that still prevents a wide diffusion of numerous applications based on THz radiation.

III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

NASA Astrophysics Data System (ADS)

Choi, Donghun

Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre-annealing at 400 °C. A 100 nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. C-V measurement results show very small frequency dispersion and 200-300 mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density, Dit, of 2.4 x 1012 eV-1cm-2 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO 3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide molecular beam deposition (MBD) chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (˜ 30 mV), frequency dispersion (˜ 60 mV), and interface trap density (mid 1010 eV-1cm -2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode AFM for surface morphology analysis, X-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of III-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, A. S., E-mail: AntonBondarenko@ymail.com; Schaeffer, D. B.; Everson, E. T.

The collision-less transfer of momentum and energy from explosive debris plasma to magnetized background plasma is a salient feature of various astrophysical and space environments. While much theoretical and computational work has investigated collision-less coupling mechanisms and relevant parameters, an experimental validation of the results demands the measurement of the complex, collective electric fields associated with debris-background plasma interaction. Emission spectroscopy offers a non-interfering diagnostic of electric fields via the Stark effect. A unique experiment at the University of California, Los Angeles, that combines the Large Plasma Device (LAPD) and the Phoenix laser facility has investigated the marginally super-Alfvénic, quasi-perpendicularmore » expansion of a laser-produced carbon (C) debris plasma through a preformed, magnetized helium (He) background plasma via emission spectroscopy. Spectral profiles of the He II 468.6 nm line measured at the maximum extent of the diamagnetic cavity are observed to intensify, broaden, and develop equally spaced modulations in response to the explosive C debris, indicative of an energetic electron population and strong oscillatory electric fields. The profiles are analyzed via time-dependent Stark effect models corresponding to single-mode and multi-mode monochromatic (single frequency) electric fields, yielding temporally resolved magnitudes and frequencies. The proximity of the measured frequencies to the expected electron plasma frequency suggests the development of the electron beam-plasma instability, and a simple saturation model demonstrates that the measured magnitudes are feasible provided that a sufficiently fast electron population is generated during C debris–He background interaction. Potential sources of the fast electrons, which likely correspond to collision-less coupling mechanisms, are briefly considered.« less

Pilotless Airplanes

DTIC Science & Technology

1989-07-05

FTD/SDAWS/Capt Craven Approved for public release; Distribution unlimited. THIS TRANSLATION IS A RENDITION OF THE ORIGI- NAL FOREIGN TEXT WITHOUT ANY...and electronic computers also spurred advances in the field of pilotless airplanes. During this period the turbine jet engine underwent a very strong...Contains the Doppler radar frequency tracking device; alternator and flight-guidance computer ; the flight control box; the remote control receiver; the

Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

2016-12-01

This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

NASA Astrophysics Data System (ADS)

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

2016-10-01

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

PubMed Central

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

2016-01-01

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches. PMID:27762291

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions.

PubMed

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A; Holleitner, Alexander W

2016-10-20

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

Computer soundcard as an AC signal generator and oscilloscope for the physics laboratory

NASA Astrophysics Data System (ADS)

Sinlapanuntakul, Jinda; Kijamnajsuk, Puchong; Jetjamnong, Chanthawut; Chotikaprakhan, Sutharat

2018-01-01

The purpose of this paper is to develop both an AC signal generator and a dual-channel oscilloscope based on standard personal computer equipped with sound card as parts of the laboratory of the fundamental physics and the introduction to electronics classes. The setup turns the computer into the two channel measured device which can provides sample rate, simultaneous sampling, frequency range, filters and others essential capabilities required to perform amplitude, phase and frequency measurements of AC signal. The AC signal also generate from the same computer sound card output simultaneously in any waveform such as sine, square, triangle, saw-toothed pulsed, swept sine and white noise etc. These can convert an inexpensive PC sound card into powerful device, which allows the students to measure physical phenomena with their own PCs either at home or at university attendance. A graphic user interface software was developed for control and analysis, including facilities for data recording, signal processing and real time measurement display. The result is expanded utility of self-learning for the students in the field of electronics both AC and DC circuits, including the sound and vibration experiments.

Phase-Sensitive Reflective Imaging Device in the mm-wave and Terahertz Regions

NASA Astrophysics Data System (ADS)

Gallerano, Gian Piero; Doria, Andrea; Germini, Marzia; Giovenale, Emilio; Messina, Giovanni; Spassovsky, Ivan P.

2009-12-01

Two Free Electron Laser sources have been developed at ENEA-Frascati for a variety of applications: A Compact Free Electron Laser (C-FEL) that provides coherent radiation in the frequency range between 90 and 150 GHz Gallerano et al. (Infrared Phys. and Techn. 40:161, 1999), and a second source, FEL-CATS, which utilizes a peculiar radio-frequency structure to generate coherent emission in the range 0.4 to 0.7 THz Doria et al. (Phys. Rev. Lett 93:264801, 2004). The high peak power of several kW in 15 to 50 ps pulses, makes these sources particularly suitable for the assessment of exposure limits in biological systems and for long range detection. In this paper we present a phase-sensitive reflective imaging device in the mm-wave and THz regions, which has proven to be a valuable tool in the biological Ramundo-Orlando et al. (Bioelectromagnetics 28:587-598, 2007), environmental Doria et al. (2005) and art conservation fields Gallerano et al. (2008). Different setups have been tested at different levels of spatial resolution to image objects from a few centimeter square to larger sizes. Images have been compared to identify and characterize the contrast mechanism.

Gas-Phase Reaction Pathways and Rate Coefficients for the Dichlorosilane-Hydrogen and Trichlorosilane-Hydrogen Systems

NASA Technical Reports Server (NTRS)

Dateo, Christopher E.; Walch, Stephen P.

2002-01-01

As part of NASA Ames Research Center's Integrated Process Team on Device/Process Modeling and Nanotechnology our goal is to create/contribute to a gas-phase chemical database for use in modeling microelectronics devices. In particular, we use ab initio methods to determine chemical reaction pathways and to evaluate reaction rate coefficients. Our initial studies concern reactions involved in the dichlorosilane-hydrogen (SiCl2H2--H2) and trichlorosilane-hydrogen (SiCl2H-H2) systems. Reactant, saddle point (transition state), and product geometries and their vibrational harmonic frequencies are determined using the complete-active-space self-consistent-field (CASSCF) electronic structure method with the correlation consistent polarized valence double-zeta basis set (cc-pVDZ). Reaction pathways are constructed by following the imaginary frequency mode of the saddle point to both the reactant and product. Accurate energetics are determined using the singles and doubles coupled-cluster method that includes a perturbational estimate of the effects of connected triple excitations (CCSD(T)) extrapolated to the complete basis set limit. Using the data from the electronic structure calculations, reaction rate coefficients are obtained using conventional and variational transition state and RRKM theories.

Theory of Gyrotron Traveling Wave Amplifiers at Harmonics of the Gyration Frequency

NASA Astrophysics Data System (ADS)

Li, Qiangfa

In developing gyrotrons at millimeter and submillimeter wavelengths, a means of operation at lower applied magnetic fields is desirable because of the size and weight of convetional magnets, and the expense and complexity of cryogenic magnets. This requirement can be met by operating the devices at higher harmonics of the electron gyration frequency. In the present work, a unified theory is developed for the gyrotron traveling wave amplifers (gyro-TWA) at harmonics of the gyration frequency, both in the nonlinear regime and in the linear regime. This theory can be applied to a wide class of waveguide cross sections, arbitrary harmonic number, any waveguide mode, and generalized electron beam model. The fields in the beam-field interaction region in the waveguide are expressed in the form of an infinite series of multipoles expanded around the guiding center of the electrons. A set of equations governing the nonlinear behavior of the gyro-TWA is derived. A general dispersion equation is derived both from that set of nonlinear equations by an iteration method and from plasma kinetic theory. The latter is employed to analyze gyro-TWA devices in a systematic and generalized manner. The Laplace transformation is introduced to allow inclusion of the initial values at the input end of the waveguide. From the linear theory it is found that for a gyrotron working at s-th gyration harmonic the electrons can interact only with the 2s-th order multipole field component. It is also found that a higher order waveguide mode is not always better than a lower order mode for the gyro-TWA working at higher harmonics. A novel out-ridged waveguide is proposed and analyzed for the use in gyrotrons. The prominent features of this new waveguide include simplicity of manufacture, freedom from local modes, good separation of lower order modes, high power handling ability, and high gain per unit length at higher gyration harmonics. A comparison of the gyro-TWAs with several different waveguide structures, such as the out-ridged, magnetron-type, rectangular and circular waveguides, is made through numerical examples of the gain-frequency curves computed from the linear kinetic theory.

Photovoltaic studies of Dye Sensitized Solar cells Fabricated from Microwave Exposed Photo anodes

NASA Astrophysics Data System (ADS)

Ramachandran, Anju; Sreekala, C. O.; Sreelatha, K. S.; Jinchu, I.

2018-02-01

The configuration of Dye Sensitized solar cells (DSSC), consists of sintered nanoparticle titanium dioxide film, dyes, electrolyte and counter electrodes. Upon the absorption of photons by the dye molecules, excitons are generated, subsequently electrons are injected into the TiO2 photoanode. Afterward the electrons injected into the TiO2 photoanode, to produce photocurrent, scavenged by redox couple, and the hole transport to the photo cathode. The power conversion efficiency of the device depends on the amount of dye adsorbed by the photoanode. This paper explores in enhancing the efficiency of the device by controlled microwave exposure. With same exposure time, the photoanode is exposed at three different frequencies. SEM analysis is carried out to find the porosity of the photoanode on exposure. Current density is found to have an effect on microwave exposure.

Damping control of micromachined lowpass mechanical vibration isolation filters using electrostatic actuation with electronic signal processing

NASA Astrophysics Data System (ADS)

Dean, Robert; Flowers, George; Sanders, Nicole; MacAllister, Ken; Horvath, Roland; Hodel, A. S.; Johnson, Wayne; Kranz, Michael; Whitley, Michael

2005-05-01

Some harsh environments, such as those encountered by aerospace vehicles and various types of industrial machinery, contain high frequency/amplitude mechanical vibrations. Unfortunately, some very useful components are sensitive to these high frequency mechanical vibrations. Examples include MEMS gyroscopes and resonators, oscillators and some micro optics. Exposure of these components to high frequency mechanical vibrations present in the operating environment can result in problems ranging from an increased noise floor to component failure. Passive micromachined silicon lowpass filter structures (spring-mass-damper) have been demonstrated in recent years. However, the performance of these filter structures is typically limited by low damping (especially if operated in near-vacuum environments) and a lack of tunability after fabrication. Active filter topologies, such as piezoelectric, electrostrictive-polymer-film and SMA have also been investigated in recent years. Electrostatic actuators, however, are utilized in many micromachined silicon devices to generate mechanical motion. They offer a number of advantages, including low power, fast response time, compatibility with silicon micromachining, capacitive position measurement and relative simplicity of fabrication. This paper presents an approach for realizing active micromachined mechanical lowpass vibration isolation filters by integrating an electrostatic actuator with the micromachined passive filter structure to realize an active mechanical lowpass filter. Although the electrostatic actuator can be used to adjust the filter resonant frequency, the primary application is for increasing the damping to an acceptable level. The physical size of these active filters is suitable for use in or as packaging for sensitive electronic and MEMS devices, such as MEMS vibratory gyroscope chips.

Photoelectrochemically driven self-assembly method

DOEpatents

Nielson, Gregory N.; Okandan, Murat

2017-01-17

Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can be applied to the electronic devices in the solution. The electronic devices can generate currents responsive to the light applied to the electronic devices in the solution, and the currents can cause electrochemical reactions that functionalize regions on surfaces of the electronic devices. Additionally or alternatively, the light applied to the electronic devices in the solution can cause the electronic devices to generate electric fields, which can orient the electronic devices and/or induce movement of the electronic devices with respect to a receiving substrate. Further, electrodes on a receiving substrate can be biased to attract and form connections with the electronic devices having the functionalized regions on the surfaces. The microsystem can include the receiving substrate and the electronic devices connected to the receiving substrate.

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry (Conference Presentation)

NASA Astrophysics Data System (ADS)

Carrad, Damon J.; Mostert, Bernard; Meredith, Paul; Micolich, Adam P.

2016-09-01

A key task in bioelectronics is the transduction between ionic/protonic signals and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics. We present our work on a new class of organic-inorganic transducing interface utilising semiconducting InAs and GaAs nanowires directly gated with a proton transporting hygroscopic polymer consisting of undoped polyethylene oxide (PEO) patterned to nanoscale dimensions by a newly developed electron-beam lithography process [1]. Remarkably, we find our undoped PEO polymer electrolyte gate dielectric [2] gives equivalent electrical performance to the more traditionally used LiClO4-doped PEO [3], with an ionic conductivity three orders of magnitude higher than previously reported for undoped PEO [4]. The observed behaviour is consistent with proton conduction in PEO. We attribute our undoped PEO-based devices' performance to the small external surface and high surface-to-volume ratio of both the nanowire conducting channel and patterned PEO dielectric in our devices, as well as the enhanced hydration afforded by device processing and atmospheric conditions. In addition to studying the basic transducing mechanisms, we also demonstrate high-fidelity ionic to electronic conversion of a.c. signals at frequencies up to 50 Hz. Moreover, by combining complementary n- and p-type transducers we demonstrate functional hybrid ionic-electronic circuits can achieve logic (NOT operation), and with some further engineering of the nanowire contacts, potentially also amplification. Our device structures have significant potential to be scaled towards realising integrated bioelectronic circuitry. [1] D.J. Carrad et al., Nano Letters 14, 94 (2014). [2] D.J. Carrad et al., Manuscript in preparation (2016). [3] S.H. Kim et al., Advanced Materials 25, 1822 (2013). [4] S.K. Fullerton-Shirey et al., Macromolecules 42, 2142 (2009).

Electronic compliance monitoring of topical treatment after ophthalmic surgery.

PubMed

Hermann, Manuel Marcel; Ustündag, Can; Diestelhorst, Michael

2010-08-01

The success of many medical treatments is built on compliance. Electronic monitoring is the most accurate tool to quantify compliance by measuring adherence. In order to assess the efficiency of a recently introduced miniature monitoring device for eye drop application, we evaluated adherence in ophthalmic patients undergoing post-operative short-term topical treatment. This pilot study enrolled 30 outpatients (mean age 61.8 +/- 18.5 years) after cataract (n = 24) and glaucoma filtration surgery (n = 6) applying fixed-combination eye drops containing prednisolone and gentamicin five times daily for 2 weeks. Patients received eye drops in conventional bottles each equipped with a miniature monitoring device recording events of application. Two patients failed to bring back the monitoring device; therefore data collected from only 28 patients could be examined. Data showed highly variable results with a mean dose compliance of 50.2%. Dose compliance was below 25% in approximately one out of five patients. Four cataract patients, but no glaucoma patient, discontinued therapy prematurely. The observed mean dosage interval was calculated for each patient and ranged 4.6-19.7 h. Thirty percent of analysed dosage intervals exceeded 12.0 h. Different patterns of compliance behaviour-like early non-persistence, drug holiday and low treatment frequency could be identified and illustrated using electronic data. Age or gender did not significantly influence compliance rates. Our pilot study demonstrates successful electronic compliance monitoring using a technology capable of continuous data recording over weeks of treatment. The low compliance rate for a relevant part of the patients demonstrates the necessity to study and improve compliance in ophthalmology. In future, new application methods and electronic application devices may improve treatment response in eye care.

Design optimization of PVDF-based piezoelectric energy harvesters.

PubMed

Song, Jundong; Zhao, Guanxing; Li, Bo; Wang, Jin

2017-09-01

Energy harvesting is a promising technology that powers the electronic devices via scavenging the ambient energy. Piezoelectric energy harvesters have attracted considerable interest for their high conversion efficiency and easy fabrication in minimized sensors and transducers. To improve the output capability of energy harvesters, properties of piezoelectric materials is an influential factor, but the potential of the material is less likely to be fully exploited without an optimized configuration. In this paper, an optimization strategy for PVDF-based cantilever-type energy harvesters is proposed to achieve the highest output power density with the given frequency and acceleration of the vibration source. It is shown that the maximum power output density only depends on the maximum allowable stress of the beam and the working frequency of the device, and these two factors can be obtained by adjusting the geometry of piezoelectric layers. The strategy is validated by coupled finite-element-circuit simulation and a practical device. The fabricated device within a volume of 13.1 mm 3 shows an output power of 112.8 μW which is comparable to that of the best-performing piezoceramic-based energy harvesters within the similar volume reported so far.

Microprocessor controlled proof-mass actuator

NASA Technical Reports Server (NTRS)

Horner, Garnett C.

1987-01-01

The objective of the microprocessor controlled proof-mass actuator is to develop the capability to mount a small programmable device on laboratory models. This capability will allow research in the active control of flexible structures. The approach in developing the actuator will be to mount all components as a single unit. All sensors, electronic and control devices will be mounted with the actuator. The goal for the force output capability of the actuator will be one pound force. The programmable force actuator developed has approximately a one pound force capability over the usable frequency range, which is above 2 Hz.

Preliminary experimental investigation of a Ku-band radial line oscillator based on transition radiation effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, Fangchao, E-mail: dangfangchao@sina.com; Zhang, Xiaoping; Zhong, Huihuang

2015-09-15

A Ku-band radial line oscillator (RLO) with low guiding magnetic field was proposed in our previous work. In order to weaken the impedance mismatch between the oscillator and an intense electron accelerator with higher impedance, a transverse electromagnetic reflector is added to improve the RLO, which is favorable to increase the Q-factor and accelerate the device saturation. A preliminary experiment is carried out to investigate the performance of the improved RLO. The radial-radiated electron beam is restrained well under the designed guiding magnetic field of 0.52 T. The preliminary experimental results indicates that high power microwaves with a power of 120 MWmore » and a frequency of 14.12 GHz are generated when the diode voltage is 420 kV and the beam current 14.2 kA. The experimental results suggest the feasibility of the presented RLO generating high power microwaves at a high frequency band. Additionally, more work is needed regarding promotion of the electron beam quality and the impedance match between the electron beam accelerator and the oscillator.« less

Experimental study of an X-band phase-locked relativistic backward wave oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Science and Technology on High Power Microwave Laboratory, Mianyang 621900; Li, Z. H.

2015-11-15

To achieve high power microwave combined with high frequency band, an X-band phase-locked relativistic backward wave oscillator (RBWO) is proposed and investigated theoretically and experimentally using a modulated electron beam. In the device, an overmoded input cavity and a buncher cavity are employed to premodulate the electron beam. Particle-in-cell simulation shows that an input power of 90 kW is sufficient to lock the frequency and phase of 1.5 GW output microwave with the locking bandwidth of 60 MHz. Moreover, phase and frequency locking of an RBWO has been accomplished experimentally with an output power of 1.5 GW. The fluctuation of the relative phase differencemore » between output microwave and input RF signal is less than ±20° with the locking duration of about 50 ns. The input RF power required to lock the oscillator is only 90 kW.« less

Brillouin light scattering as a probe for low frequency quasiparticles in solids

NASA Astrophysics Data System (ADS)

Klimovich, Nikita; Olson, Kevin; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin

2015-03-01

In increasingly small electronic and spintronic devices, electrons, optical phonons, acoustic phonons, and magnons are often driven out of local thermal equilibrium. Thermal transport based on equilibrium dynamics does not adequately describe these systems necessitating a better understanding of non-equilibrium transport processes. Measuring the specific temperatures of the different energy carriers is therefore crucial in understanding the thermal transport. Brillouin light scattering (BLS) has recently been explored as a temperature sensor for low frequency acoustic phonons in glass, and also magnons in metallic and insulating ferromagnetic materials. We report the measured BLS spectra of acoustic phonons in Silicon at different temperatures. The temperature dependence of the BLS peak frequency, linewidth, and integrated intensity are examined to evaluate their potential uses as temperature sensors of acoustic phonons. We also observe a large nonequilibrium in phonon-magnon temperature in YIG under the effects of laser heating and thereby extract a value for the phonon-magnon coupling coefficient. This work is funded by the National Science Foundation and the Army Research Office.

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Matulionis, Arvydas

2013-07-01

The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation-dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested.

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Conversion gain and noise of niobium superconducting hot-electron-mixers

NASA Technical Reports Server (NTRS)

Ekstrom, Hans; Karasik, Boris S.; Kollberg, Erik L.; Yngvesson, Sigfrid

1995-01-01

A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3 dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The requirements on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demonstrate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3 dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.

Microfluidic stretchable RF electronics.

PubMed

Cheng, Shi; Wu, Zhigang

2010-12-07

Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

Optimization Problem of Thermal Field on Surface of Revolving Susceptor in Vapor-Phase Epitaxy Reactor

NASA Astrophysics Data System (ADS)

Zhilenkov, A. A.; Chernyi, S. G.; Nyrkov, A. P.; Sokolov, S. S.

2017-10-01

Nitrides of group III elements are a very suitable basis for deriving light-emitting devices with the radiating modes lengths of 200-600 nm. The use of such semiconductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. Electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices, the specifications of which are competitive with those of SiC-based devices. Only since 2000, the technology of cultivation of crystals III-N of group has come to the level of wide recognition by both abstract science, and the industry that has led to the creation of the multi-billion dollar market. And this is despite a rather low level of development of the production technology of devices on the basis of III-N of materials. The progress that has happened in the last decade requires the solution of the main problem, constraining further development of this technology today - ensuring cultivation of III-N structures of necessary quality. For this purpose, it is necessary to solve problems of the analysis and optimization of processes in installations of epitaxial growth, and, as a result, optimization of its constructions.

Inverse mirror plasma experimental device (IMPED) - a magnetized linear plasma device for wave studies

NASA Astrophysics Data System (ADS)

Bose, Sayak; Chattopadhyay, P. K.; Ghosh, J.; Sengupta, S.; Saxena, Y. C.; Pal, R.

2015-04-01

In a quasineutral plasma, electrons undergo collective oscillations, known as plasma oscillations, when perturbed locally. The oscillations propagate due to finite temperature effects. However, the wave can lose the phase coherence between constituting oscillators in an inhomogeneous plasma (phase mixing) because of the dependence of plasma oscillation frequency on plasma density. The longitudinal electric field associated with the wave may be used to accelerate electrons to high energies by exciting large amplitude wave. However when the maximum amplitude of the wave is reached that plasma can sustain, the wave breaks. The phenomena of wave breaking and phase mixing have applications in plasma heating and particle acceleration. For detailed experimental investigation of these phenomena a new device, inverse mirror plasma experimental device (IMPED), has been designed and fabricated. The detailed considerations taken before designing the device, so that different aspects of these phenomena can be studied in a controlled manner, are described. Specifications of different components of the IMPED machine and their flexibility aspects in upgrading, if necessary, are discussed. Initial results meeting the prerequisite condition of the plasma for such study, such as a quiescent, collisionless and uniform plasma, are presented. The machine produces δnnoise/n <= 1%, Luniform ~ 120 cm at argon filling pressure of ~10-4 mbar and axial magnetic field of B = 1090 G.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics

NASA Astrophysics Data System (ADS)

Niu, Simiao; Wang, Xiaofeng; Yi, Fang; Zhou, Yu Sheng; Wang, Zhong Lin

2015-12-01

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m-3) in a regulated and managed manner. This self-charging unit can be universally applied as a standard `infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics.

PubMed

Niu, Simiao; Wang, Xiaofeng; Yi, Fang; Zhou, Yu Sheng; Wang, Zhong Lin

2015-12-11

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m(-3)) in a regulated and managed manner. This self-charging unit can be universally applied as a standard 'infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

Photoinduced Nonequilibrium Topological States in Strained Black Phosphorus

NASA Astrophysics Data System (ADS)

Liu, Hang; Sun, Jia-Tao; Cheng, Cai; Liu, Feng; Meng, Sheng

2018-06-01

Black phosphorus (BP), an elemental semiconductor, has attracted tremendous interest because it exhibits a wealth of interesting electronic and optoelectronic properties in equilibrium condition. The nonequilibrium electronic structures of bulk BP under a periodic field of laser remain unexplored, but can lead to intriguing topological optoelectronic properties. Here we show that, under the irradiation of circularly polarized light (CPL), BP exhibits a photon-dressed Floquet-Dirac semimetal state, which can be continuously tuned by changing the direction, intensity, and frequency of the incident laser. The topological phase transition from type-I to type-II Floquet-Dirac fermions manifests a new form of type-III phase, which exists in a wide range of intensities and frequencies of the incident laser. Furthermore, topological surface states exhibit nonequilibrium electron transport in a direction locked by the helicity of CPL. Our findings not only deepen our understanding of fundamental properties of BP in relation to topology but also extend optoelectronic device applications of BP to the nonequilibrium regime.

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

PubMed

Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

2017-11-28

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

Quasi-optical design for systems to diagnose the electron temperature and density fluctuations on EAST

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Qifo; Liu, Yong; Zhao, Hailin, E-mail: zhaohailin@ipp.ac.cn

A system to simultaneously diagnose the electron temperature and density fluctuations is proposed for Experimental Advanced Superconducting Tokamak device. This system includes a common quasi-optical antenna, a correlation electron cyclotron emission (CECE) system that is used to measure the electron temperature fluctuations and a Doppler backscattering (DBS) system that is used to measure the electron density fluctuations. The frequency range of the proposed CECE system is 108-120 GHz, and this corresponds to a radial coverage of normalized radius ((R − R{sub 0})/a, R{sub 0} = 1850 mm, a = 450 mm) from 0.2 to 0.67 for the plasma operation withmore » a toroidal magnetic field of 2.26 T. This paper focuses on the design of the quasi-optical antenna and aims at optimizing the poloidal resolution for different frequency bands. An optimum result gives the beam radius for the CECE system of 13-15 mm and this corresponds to a wave number range of k{sub θ} < 2.4 cm{sup −1}. The beam radius is 20-30 mm for V band (50-75 GHz) and 15-20 mm for W band (75-110 GHz).« less

Optical Diagnostics on HIT-SI3

NASA Astrophysics Data System (ADS)

Everson, Christopher; Jarboe, Thomas; Morgan, Kyle

2016-10-01

Interferometry and Thomson Scattering are implemented on the HIT-SI3 (Helicity Injected Torus - Steady Inductive 3) device to provide time resolved measurements of electron density and spatially resolved measurements of electron temperature, respectively. HIT-SI3 is a modification of the original HIT-SI apparatus that uses three injectors instead of two. The scientific aim of HIT-SI3 is to develop a deeper understanding of how injector behavior and interactions influence current drive and spheromak stability. The interferometer system makes use of an intermediate frequency between two parallel 184.3 μm Far-Infrared (FIR) laser cavities which are optically pumped by a CO2 laser. The phase shift in this beat frequency due to the plasma index of refraction is used to calculate the line-integrated electron density. To measure the electron temperature, Thomson Scattered light from a 20 J (1 GW pulse) Ruby laser off of free electrons in the HIT-SI3 plasma is measured simultaneously at four locations across the spheromak (nominally 23 cm minor radius). Polychromators bin the collected light into 3 spectral bands to detect the relative level of scattering. Work supported by the D.O.E.

Graphene-on-paper sound source devices.

PubMed

Tian, He; Ren, Tian-Ling; Xie, Dan; Wang, Yu-Feng; Zhou, Chang-Jian; Feng, Ting-Ting; Fu, Di; Yang, Yi; Peng, Ping-Gang; Wang, Li-Gang; Liu, Li-Tian

2011-06-28

We demonstrate an interesting phenomenon that graphene can emit sound. The application of graphene can be expanded in the acoustic field. Graphene-on-paper sound source devices are made by patterning graphene on paper substrates. Three graphene sheet samples with the thickness of 100, 60, and 20 nm were fabricated. Sound emission from graphene is measured as a function of power, distance, angle, and frequency in the far-field. The theoretical model of air/graphene/paper/PCB board multilayer structure is established to analyze the sound directivity, frequency response, and efficiency. Measured sound pressure level (SPL) and efficiency are in good agreement with theoretical results. It is found that graphene has a significant flat frequency response in the wide ultrasound range 20-50 kHz. In addition, the thinner graphene sheets can produce higher SPL due to its lower heat capacity per unit area (HCPUA). The infrared thermal images reveal that a thermoacoustic effect is the working principle. We find that the sound performance mainly depends on the HCPUA of the conductor and the thermal properties of the substrate. The paper-based graphene sound source devices have highly reliable, flexible, no mechanical vibration, simple structure and high performance characteristics. It could open wide applications in multimedia, consumer electronics, biological, medical, and many other areas.

Flexible and wearable electronic silk fabrics for human physiological monitoring

NASA Astrophysics Data System (ADS)

Mao, Cuiping; Zhang, Huihui; Lu, Zhisong

2017-09-01

The development of textile-based devices for human physiological monitoring has attracted tremendous interest in recent years. However, flexible physiological sensing elements based on silk fabrics have not been realized. In this paper, ZnO nanorod arrays are grown in situ on reduced graphene oxide-coated silk fabrics via a facile electro-deposition method for the fabrication of silk-fabric-based mechanical sensing devices. The data show that well-aligned ZnO nanorods with hexagonal wurtzite crystalline structures are synthesized on the conductive silk fabric surface. After magnetron sputtering of gold electrodes, silk-fabric-based devices are produced and applied to detect periodic bending and twisting. Based on the electric signals, the deformation and release processes can be easily differentiated. Human arterial pulse and respiration can also be real-time monitored to calculate the pulse rate and respiration frequency, respectively. Throat vibrations during coughing and singing are detected to demonstrate the voice recognition capability. This work may not only help develop silk-fabric-based mechanical sensing elements for potential applications in clinical diagnosis, daily healthcare monitoring and voice recognition, but also provide a versatile method for fabricating textile-based flexible electronic devices.

Superlattice-based thin-film thermoelectric modules with high cooling fluxes

PubMed Central

Bulman, Gary; Barletta, Phil; Lewis, Jay; Baldasaro, Nicholas; Manno, Michael; Bar-Cohen, Avram; Yang, Bao

2016-01-01

In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm−2, while state-of-the art commercial thin-film modules have a qmax <100 W cm−2. Such flux values are insufficient for thermal management of modern high-power devices. Here we show that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules. These devices utilize a p-type Sb2Te3/Bi2Te3 superlattice and n-type δ-doped Bi2Te3−xSex, both of which are grown heteroepitaxially using metalorganic chemical vapour deposition. We anticipate that the demonstration of these high-cooling-flux modules will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays. PMID:26757675

Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect

NASA Astrophysics Data System (ADS)

Bosisio, Luciano; Batignani, Giovanni; Bettarini, Stefano; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Giacomini, Gabriele; Piemonte, Claudio; Verzellesi, Giovanni; Zorzi, Nicola

2006-11-01

Prototypes of ionizing radiation detectors with internal signal amplification based on the bipolar transistor effect have been fabricated at ITC-irst (Trento, Italy). Results from the electrical characterization and preliminary functional tests of the devices have been previously reported. Here, we present a more detailed investigation of the performance of this type of detector, with particular attention to their noise and rate limits. Measurements of the signal waveform and of the gain versus frequency dependence are performed by illuminating the devices with, respectively, pulsed or sinusoidally modulated IR light. Pulse height spectra of X-rays from an Am241 source have been taken with very simple front-end electronics (an LF351 operational amplifier) or by directly reading with an oscilloscope the voltage drop across a load resistor connected to the emitter. An equivalent noise charge (referred to input) of 380 electrons r.m.s. has been obtained with the first setup for a small device, with an active area of 0.5×0.5 mm2 and a depleted thickness of 0.6 mm. The corresponding power dissipation in the BJT was 17 μW. The performance limitations of the devices are discussed.

Precision Continuum Receivers for Astrophysical Applications

NASA Technical Reports Server (NTRS)

Wollack, Edward J.

2011-01-01

Cryogenically cooled HEMT (High Electron Mobility Transistor) amplifiers find widespread use in radioastronomy receivers. In recent years, these devices have also been commonly employed in broadband receivers for precision measurements of the Cosmic Microwave Background (CMB) radiation. In this setting, the combination of ultra-low-noise and low-spectral-resolution observations reinforce the importance achieving suitable control over the device environment to achieve fundamentally limited receiver performance. The influence of the intrinsic amplifier stability at low frequencies on data quality (e.g., achievable noise and residual temporal correlations), observational and calibration strategies, as well as architectural mitigation approaches in this setting will be discussed. The implications of device level 1/f fluctuations reported in the literature on system performance will be reviewed.

Epidermal differential impedance sensor for conformal skin hydration monitoring.

PubMed

Huang, Xian; Yeo, Woon-Hong; Liu, Yuhao; Rogers, John A

2012-12-01

We present the design and use of an ultrathin, stretchable sensor system capable of conformal lamination onto the skin, for precision measurement and spatial mapping of levels of hydration. This device, which we refer to as a class of 'epidermal electronics' due to its 'skin-like' construction and mode of intimate integration with the body, contains miniaturized arrays of impedance-measurement electrodes arranged in a differential configuration to compensate for common-mode disturbances. Experimental results obtained with different frequencies and sensor geometries demonstrate excellent precision and accuracy, as benchmarked against conventional, commercial devices. The reversible, non-invasive soft contact of this device with the skin makes its operation appealing for applications ranging from skin care, to athletic monitoring to health/wellness assessment.

Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

NASA Astrophysics Data System (ADS)

Chen, Z.; Harris, V. G.

2012-10-01

It is widely recognized that as electronic systems' operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.

One-step direct transfer of pristine single-walled carbon nanotubes for functional nanoelectronics.

PubMed

Wu, Chung Chiang; Liu, Chang Hua; Zhong, Zhaohui

2010-03-10

We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical resonators with gate-tunable resonance frequencies. A fully suspended SWNT p-n diode has also been demonstrated with the diode ideality factor equal to 1. Our method eliminates the organic residues on SWNTs resulting from conventional lithography and solution processing. The results open up opportunities for the fundamental study of electron transport physics in ultraclean SWNTs and for room temperature fabrication of novel functional devices based on pristine SWNTs.

A new pulse width reduction technique for pulsed electron paramagnetic resonance spectroscopy.

PubMed

Ohba, Yasunori; Nakazawa, Shigeaki; Kazama, Shunji; Mizuta, Yukio

2008-03-01

We present a new technique for a microwave pulse modulator that generates a short microwave pulse of approximately 1ns for use in an electron paramagnetic resonance (EPR) spectrometer. A quadruple-frequency multiplier that generates a signal of 16-20GHz from an input of 4-5GHz was employed to reduce the rise and fall times of the pulse prepared by a PIN diode switch. We examined the transient response characteristics of a commercial frequency multiplier and found that the device can function as a multiplier for pulsed signal even though it was designed for continuous wave operation. We applied the technique to a Ku band pulsed EPR spectrometer and successfully observed a spin echo signal with a broad excitation bandwidth of approximately 1.6mT using 80 degrees pulses of 1.5ns.

Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure.

PubMed

Liu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao

2017-07-19

Mechanical flexible electronic skin has been focused on sensing various physical parameters, such as pressure and temperature. The studies of material design and array-accessible devices are the building blocks of strain sensors for subtle pressure sensing. Here, we report a new and facile preparation of a graphene hybrid structure with an ultrafast dynamic pressure response. Graphene oxide nanosheets are used as a surfactant to prevent graphene restacking in aqueous solution. This graphene hybrid structure exhibits a frequency-independent pressure resistive sensing property. Exceeding natural skin, such pressure sensors, can provide transient responses from static up to 10 000 Hz dynamic frequencies. Integrated by the controlling system, the array-accessible sensors can manipulate a robot arm and self-rectify the temperature of a heating blanket. This may pave a path toward the future application of graphene-based wearable electronics.

Coupled microwave ECR and radio-frequency plasma source for plasma processing

DOEpatents

Tsai, Chin-Chi; Haselton, Halsey H.

1994-01-01

In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Coupled microwave ECR and radio-frequency plasma source for plasma processing

DOEpatents

Tsai, C.C.; Haselton, H.H.

1994-03-08

In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm[sup 2] at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance. 4 figures.

Current saturation and voltage gain in bilayer graphene field effect transistors.

PubMed

Szafranek, B N; Fiori, G; Schall, D; Neumaier, D; Kurz, H

2012-03-14

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. © 2012 American Chemical Society

Detection beyond the Debye screening length in a high-frequency nanoelectronic biosensor.

PubMed

Kulkarni, Girish S; Zhong, Zhaohui

2012-02-08

Nanosensors based on the unique electronic properties of nanotubes and nanowires offer high sensitivity and have the potential to revolutionize the field of Point-of-Care (POC) medical diagnosis. The direct current (dc) detection of a wide array of organic and inorganic molecules has been demonstrated on these devices. However, sensing mechanism based on measuring changes in dc conductance fails at high background salt concentrations, where the sensitivity of the devices suffers from the ionic screening due to mobile ions present in the solution. Here, we successfully demonstrate that the fundamental ionic screening effect can be mitigated by operating single-walled carbon nanotube field effect transistor as a high-frequency biosensor. The nonlinear mixing between the alternating current excitation field and the molecular dipole field can generate mixing current sensitive to the surface-bound biomolecules. Electrical detection of monolayer streptavidin binding to biotin in 100 mM buffer solution is achieved at a frequency beyond 1 MHz. Theoretical modeling confirms improved sensitivity at high frequency through mitigation of the ionic screening effect. The results should promise a new biosensing platform for POC detection, where biosensors functioning directly in physiologically relevant condition are desired. © 2012 American Chemical Society

Photo-activation of Single Molecule Magnet Behavior in a Manganese-based Complex

NASA Astrophysics Data System (ADS)

Fetoh, Ahmed; Cosquer, Goulven; Morimoto, Masakazu; Irie, Masahiro; El-Gammal, Ola; El-Reash, Gaber Abu; Breedlove, Brian K.; Yamashita, Masahiro

2016-03-01

A major roadblock to fully realizing molecular electronic devices is the ability to control the properties of each molecule in the device. Herein we report the control of the magnetic properties of single-molecule magnets (SMMs), which can be used in memory devices, by using a photo-isomerizable diarthylenthene ligand. Photo-isomerization of the diarylethene ligand bridging two manganese salen complexes with visible light caused a significant change in the SMM behavior due to opening of the six-membered ring of diarylethene ligand, accompanied by reorganization of the entire molecule. The ring-opening activated the frequency-dependent magnetization of the complex. Our results are a major step towards the realization of molecular memory devices composed of SMMs because the SMM behaviour can be turned on and off simply by irradiating the molecule.

Adolescent Sleep Patterns and Night-Time Technology Use: Results of the Australian Broadcasting Corporation's Big Sleep Survey

PubMed Central

Gamble, Amanda L.; D'Rozario, Angela L.; Bartlett, Delwyn J.; Williams, Shaun; Bin, Yu Sun; Grunstein, Ronald R.; Marshall, Nathaniel S.

2014-01-01

Introduction Electronic devices in the bedroom are broadly linked with poor sleep in adolescents. This study investigated whether there is a dose-response relationship between use of electronic devices (computers, cellphones, televisions and radios) in bed prior to sleep and adolescent sleep patterns. Methods Adolescents aged 11–17 yrs (n = 1,184; 67.6% female) completed an Australia-wide internet survey that examined sleep patterns, sleepiness, sleep disorders, the presence of electronic devices in the bedroom and frequency of use in bed at night. Results Over 70% of adolescents reported 2 or more electronic devices in their bedroom at night. Use of devices in bed a few nights per week or more was 46.8% cellphone, 38.5% computer, 23.2% TV, and 15.8% radio. Device use had dose-dependent associations with later sleep onset on weekdays (highest-dose computer adjOR  = 3.75: 99% CI  = 2.17–6.46; cellphone 2.29: 1.22–4.30) and weekends (computer 3.68: 2.14–6.32; cellphone 3.24: 1.70–6.19; TV 2.32: 1.30–4.14), and later waking on weekdays (computer 2.08: 1.25–3.44; TV 2.31: 1.33–4.02) and weekends (computer 1.99: 1.21–3.26; cellphone 2.33: 1.33–4.08; TV 2.04: 1.18–3.55). Only ‘almost every night’ computer use (: 2.43: 1.45–4.08) was associated with short weekday sleep duration, and only ‘almost every night’ cellphone use (2.23: 1.26–3.94) was associated with wake lag (waking later on weekends). Conclusions Use of computers, cell-phones and televisions at higher doses was associated with delayed sleep/wake schedules and wake lag, potentially impairing health and educational outcomes. PMID:25390034

Designing Crane Controls with Applied Mechanical and Electrical Safety Features

NASA Technical Reports Server (NTRS)

Lytle, Bradford P.; Walczak, Thomas A.

2002-01-01

The use of overhead traveling bridge cranes in many varied applications is common practice. In particular, the use of cranes in the nuclear, military, commercial, aerospace, and other industries can involve safety critical situations. Considerations for Human Injury or Casualty, Loss of Assets, Endangering the Environment, or Economic Reduction must be addressed. Traditionally, in order to achieve additional safety in these applications, mechanical systems have been augmented with a variety of devices. These devices assure that a mechanical component failure shall reduce the risk of a catastrophic loss of the correct and/or safe load carrying capability. ASME NOG-1-1998, (Rules for Construction of Overhead and Gantry Cranes, Top Running Bridge, and Multiple Girder), provides design standards for cranes in safety critical areas. Over and above the minimum safety requirements of todays design standards, users struggle with obtaining a higher degree of reliability through more precise functional specifications while attempting to provide "smart" safety systems. Electrical control systems also may be equipped with protective devices similar to the mechanical design features. Demands for improvement of the cranes "control system" is often recognized, but difficult to quantify for this traditionally "mechanically" oriented market. Finite details for each operation must be examined and understood. As an example, load drift (or small motions) at close tolerances can be unacceptable (and considered critical). To meet these high functional demands encoders and other devices are independently added to control systems to provide motion and velocity feedback to the control drive. This paper will examine the implementation of Programmable Electronic Systems (PES). PES is a term this paper will use to describe any control system utilizing any programmable electronic device such as Programmable Logic Controllers (PLC), or an Adjustable Frequency Drive (AID) 'smart' programmable motion controller. Therefore the use of the term Programmable Electronic Systems (PES) is an encompassing description for a large spectrum of programmable electronic control devices.

Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

PubMed Central

Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

2014-01-01

Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method. PMID:25133237

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Microwave SQUID Multiplexer for the Readout of Metallic Magnetic Calorimeters

NASA Astrophysics Data System (ADS)

Kempf, S.; Gastaldo, L.; Fleischmann, A.; Enss, C.

2014-06-01

We have realized a frequency-domain multiplexing technique for the readout of large metallic magnetic calorimeter detector arrays. It is based on non-hysteretic single-junction SQUIDs and allows for a simultaneous readout of hundreds or thousands of detectors by using a single cryogenic high electron mobility transistor amplifier and two coaxial cables that are routed from room-temperature to the detector array. We discuss the working principle of the multiplexer and present details about our prototype multiplexer design. We show that fabricated devices are fully operational and that characteristic SQUID parameters such as the input sensitivity of the SQUID or the resonance frequency of the readout circuit can be predicted with confidence. Our best device so far has shown a magnetic flux white noise level of 1.4 m which can in future be reduced by an optimization of the fabrication processes as well as an improved microwave readout system.

Controlled Trapping of Onion-Like Carbon (OLC) via Dielectrophoresis

NASA Astrophysics Data System (ADS)

Olariu, Marius; Arcire, Alexandru; Plonska-Brzezinska, Marta E.

2017-01-01

Manipulation of onion-like carbon (OLC), also known as carbon nano-onions (CNOs), at the level of various arrays of microelectrodes is vital in practical applications such as biological and chemical sensing, ultracapacitors (supercapacitors), electromagnetic shielding, catalysis, tribology, optical limiting and molecular junctions in scanning tunneling microscopy, and field-effect transistors. In spite of technological developments in this area, rigorous handling of carbon nano-onions towards desired locations within a device remains a challenge, and the quantity of OLC required significantly influences the price of the final electrical or electronic device. We present herein an experimental study on electromanipulation and trapping of onion-like carbon (OLC) at the level of gold-patterned interdigitated microelectrodes through dielectrophoresis. The influence of the magnitude as well as frequency of the alternating-current (AC) voltage employed for OLC trapping is discussed in detail. The effects of tuning the AC field strength and frequency on the OLC trapping behavior are also considered.

A facile growth mechanism, structural, optical, dielectric and electrical properties of ZnSe nanosphere via hydrothermal process

NASA Astrophysics Data System (ADS)

Javed, Qurat-Ul-Ain; Baqi, Sabah; Abbas, Hussain; Bibi, Maryam

2017-02-01

Hydrothermal method was chosen as a convenient method to fabricate zinc selenide (ZnSe) nanoparticle materials. The prepared nanospheres were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), where its different properties were observed using UV-visible spectroscopy and LCR meter. It was found that the pure ZnSe nanoparticles have a Zinc blende structure with crystallite size 10.91 nm and in a spherical form with average diameter of 35 nm (before sonication) and 18 nm (after sonication) with wide band gap of 4.28 eV. It was observed that there is inverse relation of frequency with dielectric constant and dielectric loss while AC conductivity grows up by increasing frequency. Such nanostructures were determined to be effectively used in optoelectronic devices as UV detector and in those devices where high-dielectric constant materials are required.

PHz current switching in calcium fluoride single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Ojoon; Kim, D., E-mail: kimd@postech.ac.kr; Max Planck Center for Attosecond Science, Max Planck POSTECH/Korea Res. Init., Pohang 37673

2016-05-09

We demonstrate that a current can be induced and switched in a sub-femtosecond time-scale in an insulating calcium fluoride single crystal by an intense optical field. This measurement indicates that a sizable current can be generated and also controlled by an optical field in a dielectric medium, implying the capability of rapid current switching at a rate of optical frequency, PHz (10{sup 15} Hz), which is a couple of orders of magnitude higher than that of contemporary electronic signal processing. This demonstration may serve to facilitate the development of ultrafast devices in PHz frequency.

Study of performance and propagation characteristics of wire and planar structures around human body.

PubMed

Aroul, A L Praveen; Bhatia, Dinesh

2011-01-01

Continued miniaturization of electronic devices and technological advancements in wireless communications has made wearable body-centric telemedicine systems viable. Antennas play a crucial role in characterizing the efficiency and reliability of these systems. The performance characteristics such as the radiation pattern, gain, efficiency of the antennas get adversely affected due to the presence of lossy human body tissues. In this paper we investigate the above mentioned performance parameters and radio frequency transmission properties of wire and planar structures operating at ISM frequency band of 2.40-2.50 GHz in the proximity of human body.

1998 Conference on Precision Electromagnetic Measurements Digest. Proceedings.

NASA Astrophysics Data System (ADS)

Nelson, T. L.

The following topics were dealt with: fundamental constants; caesium standards; AC-DC transfer; impedance measurement; length measurement; units; statistics; cryogenic resonators; time transfer; QED; resistance scaling and bridges; mass measurement; atomic fountains and clocks; single electron transport; Newtonian constant of gravitation; stabilised lasers and frequency measurements; cryogenic current comparators; optical frequency standards; high voltage devices and systems; international compatibility; magnetic measurement; precision power measurement; high resolution spectroscopy; DC transport standards; waveform acquisition and analysis; ion trap standards; optical metrology; quantised Hall effect; Josephson array comparisons; signal generation and measurement; Avogadro constant; microwave networks; wideband power standards; antennas, fields and EMC; quantum-based standards.

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

Single-Crystal Diamond Nanobeam Waveguide Optomechanics

NASA Astrophysics Data System (ADS)

Khanaliloo, Behzad; Jayakumar, Harishankar; Hryciw, Aaron C.; Lake, David P.; Kaviani, Hamidreza; Barclay, Paul E.

2015-10-01

Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm . The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7 ×105 and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm /√{Hz } sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.

Occupational exposure to intermediate frequency and extremely low frequency magnetic fields among personnel working near electronic article surveillance systems.

PubMed

Roivainen, Päivi; Eskelinen, Tuomo; Jokela, Kari; Juutilainen, Jukka

2014-05-01

Cashiers are potentially exposed to intermediate frequency (IF) magnetic fields at their workplaces because of the electronic article surveillance (EAS) systems used in stores to protect merchandise against theft. This study aimed at investigating occupational exposure of cashiers to IF magnetic fields in Finnish stores. Exposure to extremely low frequency (ELF) magnetic fields was also evaluated because cashiers work near various devices operating with 50 Hz electric power. The peak magnetic flux density was measured for IF magnetic fields, and was found to vary from 0.2 to 4 µT at the cashier's seat. ELF magnetic fields from 0.03 to 4.5 µT were found at the cashier's seat. These values are much lower than exposure limits. However, according to the International Commission on Non-Ionizing Radiation Protection (ICNIRP) occupational reference levels for IF magnetic fields (141 µT for the peak field) were exceeded in some cases (maximum 189 µT) for short periods of time when cashiers walked through the EAS gates. As the ICNIRP reference levels do not define any minimum time for exposure, additional investigations are recommended to determine compliance with basic restrictions. Even if the basic restrictions are not exceeded, persons working near EAS devices represent an exceptional group of workers with respect to exposure to electromagnetic fields. This group could serve as a basis for epidemiological studies addressing possible health effects of IF magnetic fields. Compliance with the reference levels for IF fields was evaluated using both broadband measurement of peak fields and the ICNIRP summation rule for multiple frequencies. The latter was generally more conservative, and the difference between the two methods was large (>10-fold) for EAS systems using a 58 kHz signal with complex waveform. This indicates that the ICNIRP multiple frequency rule can be unnecessarily conservative when measuring complex waveforms. © 2014 Wiley Periodicals, Inc.

Frequency and time domain studies of magneto-transport and charge trapping in amorphous organic semiconductors

NASA Astrophysics Data System (ADS)

Rybicki, James Edward

The focus of this thesis is a recently discovered organic magnetoresistance (OMAR) whose underlying mechanism remains much debated. As an introduction, the field of organic electronic is briefly discussed focusing mainly on organic light emitting diodes, the devices in which OMAR was first discovered. Important findings related to OMAR from prior work are highlighted and several proposed models for the underlying mechanism are discussed. The frequency dependence of OMAR along with capacitance spectroscopy are studied to help distinguish between proposed models. The limit frequency for OMAR devices is obtained. Magnetic field dependent time-of-flight spectroscopy is used to determine whether applied magnetic fields modify the photocarrier generation efficiency in OMAR devices, their mobility, or both. These results are used to compare the bipolaron model and the triplet-polaron scattering mechanism. As it is generally agreed that OMAR is a spintronic effect, the role of spin-orbit coupling in polymers was studied to help understand its importance in the spin-transport of organic semiconductors. The possibility of spin-orbit induced spin precession is examined and a phonon assisted spin-flip process is proposed. We show OMAR may be enhanced by exposure to x-ray radiation. This is shown to be related to the production of traps. The effect on other device characteristics including turn-voltage and quantum efficiency is also examined. The role of trap production in enhancing OMAR is explained using the biopolaron model.

Feasibility of the MUSIC Algorithm for the Active Protection System

DTIC Science & Technology

2001-03-01

Feasibility of the MUSIC Algorithm for the Active Protection System ARL-MR-501 March 2001 Canh Ly Approved for public release; distribution... MUSIC Algorithm for the Active Protection System Canh Ly Sensors and Electron Devices Directorate Approved for public release; distribution unlimited...This report compares the accuracy of the doppler frequency of an incoming projectile with the use of the MUSIC (multiple signal classification

Development of models simulating operation of elements of radio devices, for solving problems of ensuring electromagnetic compatibility of radio electronic means

NASA Astrophysics Data System (ADS)

Glotov, V. V.; Ostroumov, I. V.; Romashchenko, M. A.

2018-05-01

To study the effect of phase-shift signals parameters on EMC of REM, a generalized signal generation model in a radio transmitter was developed which allows obtaining digital representations of phase-shift signals, which are a continuous pulse in the time domain and on the frequency axis with different signal element envelope shapes.

Resonant tunnelling and negative differential conductance in graphene transistors

PubMed Central

Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

2013-01-01

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. PMID:23653206

The SpeechEasy device in stuttering and nonstuttering adults: fluency effects while speaking and reading.

PubMed

Foundas, Anne L; Mock, Jeffrey R; Corey, David M; Golob, Edward J; Conture, Edward G

2013-08-01

The SpeechEasy is an electronic device designed to alleviate stuttering by manipulating auditory feedback via time delays and frequency shifts. Device settings (control, default, custom), ear-placement (left, right), speaking task, and cognitive variables were examined in people who stutter (PWS) (n=14) compared to controls (n=10). Among the PWS there was a significantly greater reduction in stuttering (compared to baseline) with custom device settings compared to the non-altered feedback (control) condition. Stuttering was reduced the most during reading, followed by narrative and conversation. For the conversation task, stuttering was reduced more when the device was worn in the left ear. Those individuals with a more severe stuttering rate at baseline had a greater benefit from the use of the device compared to individuals with less severe stuttering. Our results support the view that overt stuttering is associated with defective speech-language monitoring that can be influenced by manipulating auditory feedback. Copyright © 2013 Elsevier Inc. All rights reserved.

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jing; Peter Grünberg Institute; Zhang, Yi

2014-05-15

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mAmore » to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.« less

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

NASA Astrophysics Data System (ADS)

Zhao, Jing; Zhang, Yi; Lee, Yong-Ho; Krause, Hans-Joachim

2014-05-01

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

Hybrid Modeling of SiH4/Ar Discharge in a Pulse Modulated RF Capacitively Coupled Plasma

NASA Astrophysics Data System (ADS)

Xi-Feng, Wang; Yuan-Hong, Song; You-Nian, Wang; PSEG Team

2015-09-01

Pulsed plasmas have offered important advantages in future micro-devices, especially for electronegative gas plasmas. In this work, a one-dimensional fluid and Monte-Carlo (MC) hybrid model is developed to simulate SiH4/Ar discharge in a pulse modulated radio-frequency (RF) capacitively coupled plasma (CCP). Time evolution densities of different species, such as electrons, ions, radicals, are calculated, as well as the electron energy probability function (EEPF) which is obtained by a MC simulation. By pulsing the RF source, the electron energy distributions and plasma properties can be modulated by pulse frequency and duty cycle. High electron energy tails are obtained during power-on period, with the SiHx densities increasing rapidly mainly by SiH4 dissociation. As the RF power is off, the densities in the bulk region decrease rapidly owing to high energy electrons disappear, but increase near electrodes since diffusion without the confinement of high electric field, which can prolong the time of radials deposition on the plate. Especially, in the afterglow, the increase of negative ions near the electrodes results from cool electron attachment, which are good for film deposition. This work was supported by the National Natural Science Foundation of China (Grant No. 11275038).

Development of a high permeability cored transintegumental power transformer.

PubMed

Helmicki, A J; Melvin, D M; Henderson, H T; Nebrigic, D; Venkat, R; Glos, D L

1996-01-01

Circulatory support devices require 10-20 W. Currently, several devices are under development for the transmission of this power via transcutaneous transformers, with the secondary implanted subcutaneously and the primary worn externally. Because these devices are air cored, they have relatively large, bulky external appliances, poor coil to coil coupling, and result in significant stray fields passing through adjacent tissues. This article reports on the engineering design of a novel, high permeability cored transformer implanted in a transenteric configuration using an isolated intestinal pouch. Such an approach offers greater energy transmission efficiency, less heat dissipation, less stray electromagnetic energy, and greatly reduced device size. Two competing designs using this concept have been developed and tested. Each consists of the transformer, together with power interface electronics, forming a direct current (DC)/DC resonant converter. Operating frequencies are 90.2 and 14.7 kHz, respectively, with primary/secondary turns ratios of 10/10 and 11/14, respectively. In addition, data interface electronics allows communication across the transformer of up to four signals at a per channel sample rate of 10 Hz. Both designs are able to continuously transmit 25 W at an output level of 12 Vdc into a 5.8 omega load. Calorimetry tests indicate DC to DC efficiencies greater than 75% and coil to coil efficiencies greater than 96%. Total package size for the implantable portion of each device (including sensor internal interface electronics) is less than 40 ml, with a weight weight of less than 100 g. The results of short-term implantation studies have been favorable. Long-term implantation studies currently are under way.

Frequency-domain cascading microwave superconducting quantum interference device multiplexers; beyond limitations originating from room-temperature electronics

NASA Astrophysics Data System (ADS)

Kohjiro, Satoshi; Hirayama, Fuminori

2018-07-01

A novel approach, frequency-domain cascading microwave multiplexers (MW-Mux), has been proposed and its basic operation has been demonstrated to increase the number of pixels multiplexed in a readout line U of MW-Mux for superconducting detector arrays. This method is an alternative to the challenging development of wideband, large power, and spurious-free room-temperature (300 K) electronics. The readout system for U pixels consists of four main parts: (1) multiplexer chips connected in series those contain U superconducting resonators in total. (2) A cryogenic high-electron-mobility transistor amplifier (HEMT). (3) A 300 K microwave frequency comb generator based on N(≡U/M) parallel units of digital-to-analog converters (DAC). (4) N parallel units of 300 K analog-to-digital converters (ADC). Here, M is the number of tones each DAC produces and each ADC handles. The output signal of U detectors multiplexed at the cryogenic stage is transmitted through a cable to the room temperature and divided into N processors where each handles M pixels. Due to the reduction factor of 1/N, U is not anymore dominated by the 300 K electronics but can be increased up to the potential value determined by either the bandwidth or the spurious-free power of the HEMT. Based on experimental results on the prototype system with N = 2 and M = 3, neither excess inter-pixel crosstalk nor excess noise has been observed in comparison with conventional MW-Mux. This indicates that the frequency-domain cascading MW-Mux provides the full (100%) usage of the HEMT band by assigning N 300 K bands on the frequency axis without inter-band gaps.

Ferromagnetic-Insulator-Based Superconducting Junctions as Sensitive Electron Thermometers

NASA Astrophysics Data System (ADS)

Giazotto, F.; Solinas, P.; Braggio, A.; Bergeret, F. S.

2015-10-01

We present an exhaustive theoretical analysis of charge and thermoelectric transport in a normal-metal-ferromagnetic-insulator-superconductor junction and explore the possibility of its use as a sensitive thermometer. We investigate the transfer functions and the intrinsic noise performance for different measurement configurations. A common feature of all configurations is that the best temperature-noise performance is obtained in the nonlinear temperature regime for a structure based on an Europium chalcogenide ferromagnetic insulator in contact with a superconducting Al film structure. For an open-circuit configuration, although the maximal intrinsic temperature sensitivity can achieve 10 nK Hz-1 /2 , a realistic amplifying chain will reduce the sensitivity up to 10 μ K Hz-1 /2 . To overcome this limitation, we propose a measurement scheme in a closed-circuit configuration based on state-of-the-art superconducting-quantum-interference-device detection technology in an inductive setup. In such a case, we show that temperature-noise can be as low as 35 nK Hz-1 /2 . We also discuss a temperature-to-frequency converter where the obtained thermovoltage developed over a Josephson junction operated in the dissipative regime is converted into a high-frequency signal. We predict that the structure can generate frequencies up to approximately 120 GHz and transfer functions up to 200 GHz /K at around 1 K. If operated as an electron thermometer, the device may provide temperature-noise lower than 35 nK Hz-1 /2 thereby being potentially attractive for radiation-sensing applications.

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

2004-01-01

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

NASA Technical Reports Server (NTRS)

Ketterson, Andrew A.; Masselink, William T.; Gedymin, Jon S.; Klem, John; Peng, Chin-Kun

1986-01-01

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Recent Results With Coupled Opto-Electronic Oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

1998-07-01

We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Recent results with the coupled opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-11-01

We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

Evaluation of RCA thinned buried channel charge-coupled devices /CCDs/ for scientific applications

NASA Technical Reports Server (NTRS)

Zucchino, P.; Long, D.; Lowrance, J. L.; Renda, G.; Crawshaw, D. D.; Battson, D. F.

1981-01-01

An experimental version of a thinned illuminated buried-channel 512 x 320 pixel CCD with reduced amplifier input capacitance has been produced which is characterized by lower readout noise. Changes made to the amplifier are discussed, and readout noise measurements obtained by several different techniques are presented. The single energetic electron response of the CCD in the electron-bombarded mode and the single 5.9 keV X-ray pulse height distribution are reported. Results are also given on the dark current versus temperature and the spatial frequency response as a function of signal level.

Plasma Physics Challenges of MM-to-THz and High Power Microwave Generation

NASA Astrophysics Data System (ADS)

Booske, John

2007-11-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave to terahertz regime electromagnetic radiation, from 0.1 to 10 THz. While sources at the low frequency end, i.e., the gyrotron, have been deployed or are being tested for diverse applications such as WARLOC radar and active denial systems, the challenges for higher frequency sources have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, and high resolution spectroscopy and atmospheric sensing. The compact size requirements for many of these high frequency sources requires miniscule, micro-fabricated slow wave circuits with high rf ohmic losses. This necessitates electron beams with not only very small transverse dimensions but also very high current density for adequate gain. Thus, the emerging family of mm-to-THz e-beam-driven vacuum electronics devices share many of the same plasma physics challenges that currently confront ``classic'' high power microwave (HPM) generators [1] including bright electron sources, intense beam transport, energetic electron interaction with surfaces and rf air breakdown at output windows. Multidimensional theoretical and computational models are especially important for understanding and addressing these challenges. The contemporary plasma physics issues, recent achievements, as well as the opportunities and outlook on THz and HPM will be addressed. [1] R.J. Barker, J.H. Booske, N.C. Luhmann, and G.S. Nusinovich, Modern Microwave and Millimeter-Wave Power Electronics (IEEE/Wiley, 2005).

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

Characterization of the Electron Energy Distribution Function in a Penning Discharge

NASA Astrophysics Data System (ADS)

Skoutnev, Valentin; Dourbal, Paul; Raitses, Yevgeny

2017-10-01

Slow and fast sweeping Langmuir probe diagnostics were implemented to measure the electron energy distribution function (EEDF) in a cross-field Penning discharge undergoing rotating spoke phenomenon. The EEDF was measured using the Druyvesteyn method. Rotating spoke occurs in a variety of ExB devices and is characterized primarily by azimuthal light, density, and potential fluctuations on the order of a few kHz, but is theoretically still not well understood. Characterization of a time-resolved EEDF of the spoke would be important for understanding physical mechanisms responsible for the spoke and its effects on Penning discharges, Hall thrusters, sputtering magnetrons, and other ExB devices. In this work, preliminary results of measurements of the EEDF using slow and fast Langmuir probes that sweep below and above the fundamental spoke frequency will be discussed. This work was supported by the Air Force Office of Scientific Research (AFOSR).

Micromechanical Waveguide Mounts for Hot Electron Bolometer Terahertz Mixers

NASA Astrophysics Data System (ADS)

Brandt, Michael; Jacobs, Karl; Honingh, C. E.; Stodolka, Jörg

The superior beam matching of waveguide horn antennas to a telescope suggests using waveguide mounts even at THz-frequencies. In contrast to the more common quasi-optical (substrate lens) designs, the exceedingly small dimensions of the waveguide require novel micro-mechanical fabrication technologies. We will present a novel fabrication scheme for 1.9 THz waveguide mixers for SOFIA. Hot Electron Bolometer devices (HEB) are fabricated on 2 μm thick Si3N4 membrane strips. The strips are robust enough to be mounted on a separately fabricated Si support frame using an adapted flip-chip technology. Mounted onto the frame, the devices can be easily positioned and glued into a copper waveguide mount. Further developments regarding micro-mechanical processes to fabricate this copper waveguide mount and the receiving horn antenna will be presented, as well as the KOSMA Micro Assembly Station and its capabilities to handle mixer substrates.

The Physics of Tokamak Start-up

DOE Office of Scientific and Technical Information (OSTI.GOV)

D. Mueller

Tokamak start-up on present-day devices usually relies on inductively induced voltage from a central solenoid. In some cases inductive startup is assisted with auxiliary power from electron cyclotron radio frequency heating. ITER, the National Spherical Torus eXperiment Upgrade and JT60, now under construction, will make use of the understanding gained from present-day devices to ensure successful start-up. Design of a spherical tokamak (ST) with DT capability for nuclear component testing would require an alternative to a central solenoid because the small central column in an ST has insufficient space to provide shielding for the insulators in the solenoid. Alternative start-upmore » techniques such as induction using outer poloidal field coils, electron Bernstein wave start-up, coaxial helicity injection and point source helicity injection have been used with success, but require demonstration of scaling to higher plasma current.« less

The physics of tokamak start-up

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mueller, D.

Tokamak start-up on present-day devices usually relies on inductively induced voltage from a central solenoid. In some cases, inductive startup is assisted with auxiliary power from electron cyclotron radio frequency heating. International Thermonuclear Experimental Reactor, the National Spherical Torus Experiment Upgrade and JT60, now under construction, will make use of the understanding gained from present-day devices to ensure successful start-up. Design of a spherical tokamak (ST) with DT capability for nuclear component testing would require an alternative to a central solenoid because the small central column in an ST has insufficient space to provide shielding for the insulators in themore » solenoid. Alternative start-up techniques such as induction using outer poloidal field coils, electron Bernstein wave start-up, coaxial helicity injection, and point source helicity injection have been used with success, but require demonstration of scaling to higher plasma current.« less

Highly conductive and flexible nano-structured carbon-based polymer nanocomposites with improved electromagnetic-interference-shielding performance

NASA Astrophysics Data System (ADS)

Mondal, Subhadip; Ghosh, Sabyasachi; Ganguly, Sayan; Das, Poushali; Ravindren, Revathy; Sit, Subhashis; Chakraborty, Goutam; Das, Narayan Ch

2017-10-01

Widespread usage and development of electrical/electronic devices can create severe problems for various other devices and in our everyday lives due to harmful exposure to electromagnetic (EM) radiation. Herein, we report on the electromagnetic interference (EMI)-shielding performance of highly flexible and conductive chlorinated polyethylene (CPE)/carbon nanofiber (CNF) nanocomposites fabricated by a probe-sonication-assisted simple solution-mixing process. The dispersion of CNF nanofillers inside the CPE matrix has been studied by electron micrographs. This dispersion is reflected in the formation of continuous conductive networks at a low percolation-threshold value of 2.87 wt% and promising EMI-shielding performance of 41.5 dB for 25 wt% CNF in the X-band frequency (8.2-12.4 GHz). Such an intriguing performance mainly depends on the unique filler-filler or filler-polymer networks in CPE nanocomposites. In addition, the composite material displays a superior EMI efficiency of 47.5 dB for 2.0 mm thickness at 8.2 GHz. However, we have been encouraged by the promotion of highly flexible and lightweight CPE/CNF nanocomposite as a superior EMI shield, which can protect electronic devices against harm caused by EM radiation and offers an adaptable solution in advanced EMI-shield applications.

Transport conductivity of graphene at RF and microwave frequencies

NASA Astrophysics Data System (ADS)

Awan, S. A.; Lombardo, A.; Colli, A.; Privitera, G.; Kulmala, T. S.; Kivioja, J. M.; Koshino, M.; Ferrari, A. C.

2016-03-01

We measure graphene coplanar waveguides from direct current (DC) to a frequency f = 13.5 GHz and show that the apparent resistance (in the presence of parasitic impedances) has an {ω }2 dependence (where ω =2π f), but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current (AC) conductivity is the same as the DC value and the imaginary part is ˜0. The graphene channel is modeled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time ˜2.1 ps, highlighting the influence of AC electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analog field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

Semiconductor nanomembrane-based sensors for high frequency pressure measurements

NASA Astrophysics Data System (ADS)

Ruan, Hang; Kang, Yuhong; Homer, Michelle; Claus, Richard O.; Mayo, David; Sibold, Ridge; Jones, Tyler; Ng, Wing

2017-04-01

This paper demonstrates improvements on semiconductor nanomembrane based high frequency pressure sensors that utilize silicon on insulator techniques in combination with nanocomposite materials. The low-modulus, conformal nanomembrane sensor skins with integrated interconnect elements and electronic devices could be applied to vehicles or wind tunnel models for full spectrum pressure analysis. Experimental data demonstrates that: 1) silicon nanomembrane may be used as single pressure sensor transducers and elements in sensor arrays, 2) the arrays may be instrumented to map pressure over the surfaces of test articles over a range of Reynolds numbers, temperature and other environmental conditions, 3) in the high frequency range, the sensor is comparable to the commercial high frequency sensor, and 4) in the low frequency range, the sensor is much better than the commercial sensor. This supports the claim that nanomembrane pressure sensors may be used for wide bandwidth flow analysis.

Remote driven and read MEMS sensors for harsh environments.

PubMed

Knobloch, Aaron J; Ahmad, Faisal R; Sexton, Dan W; Vernooy, David W

2013-10-21

The utilization of high accuracy sensors in harsh environments has been limited by the temperature constraints of the control electronics that must be co-located with the sensor. Several methods of remote interrogation for resonant sensors are presented in this paper which would allow these sensors to be extended to harsh environments. This work in particular demonstrates for the first time the ability to acoustically drive a silicon comb drive resonator into resonance and electromagnetically couple to the resonator to read its frequency. The performance of this system was studied as a function of standoff distance demonstrating the ability to excite and read the device from 22 cm when limited to drive powers of 30 mW. A feedback architecture was implemented that allowed the resonator to be driven into resonance from broadband noise and a standoff distance of 15 cm was demonstrated. It is emphasized that no junction-based electronic device was required to be co-located with the resonator, opening the door for the use of silicon-based, high accuracy MEMS devices in high temperature wireless applications.

Strain-Induced Spin-Resonance Shifts in Silicon Devices

NASA Astrophysics Data System (ADS)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Design, Simulation and Experiments on the Recirculating Crossed-Field Planar Amplifier

NASA Astrophysics Data System (ADS)

Exelby, Steven; Greening, Geoffrey; Jordan, Nicholas; Packard, Drew; Lau, Yue Ying; Gilgenbach, Ronald; Simon, David; Hoff, Brad

2017-10-01

The Recirculating Planar Crossed-Field Amplifier (RPCFA) is the focus of simulation and experimental work. This amplifier, inspired by the Recirculating Planar Magnetron, is driven by the Michigan Electron Long Beam Accelerator (MELBA), configured to deliver a -300 kV, 1-10 kA, 0.3-1.0 µs pulse. For these parameters, a slow wave structure (SWS), cathode, and housing were designed using the finite element frequency domain code Ansys HFSS, and verified using the PIC code, MAGIC. Simulations of this device demonstrated amplification of 1.3 MW, 3 GHz signal to approximately 29 MW (13.5 dB) with nearly 53% electronic efficiency. Simulations have also shown the device is zero-drive stable, operates under a range of voltages, with bandwidth of 10%, on par with existing CFAs. The RPCFA SWS has been fabricated using 3D printing, while the rest of the device has been developed using traditional machining. Experimental RPCFA cold tube characteristics matched those from simulation. Experiments on MELBA have demonstrated zero-drive stability and amplifier experiments are underway. This work was supported by the AFOSR Grant FA9550-15-1-0097.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

DOEpatents

Hershkowitz, Noah [Madison, WI; Longmier, Benjamin [Madison, WI; Baalrud, Scott [Madison, WI

2009-03-03

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2011-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2009-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Modeling of a Compact Terahertz Source based on the Two-Stream Instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Svimonishvili, Tengiz

2016-05-17

THz radiation straddles the microwave and infrared bands of the electromagnetic spectrum, thus combining the penetrating power of lower-frequency waves and imaging capabilities of higher-energy infrared radiation. THz radiation is employed in various elds such as cancer research, biology, agriculture, homeland security, and environmental monitoring. Conventional vacuum electronic sources of THz radiation (e.g., fast- and slow-wave devices) either require very small structures or are bulky and expensive to operate. Optical sources necessitate cryogenic cooling and are presently capable of producing milliwatt levels of power at THz frequencies. We propose a millimeter and sub-millimeter wave source based on a well-known phenomenonmore » called the two-stream instability. The two-beam source relies on lowenergy and low-current electron beams for operation. Also, it is compact, simple in design, and does not contain expensive parts that require complex machining and precise alignment. In this dissertation, we perform 2-D particle-in-cell (PIC) simulations of the interaction region of the two-beam source. The interaction region consists of a beam pipe of radius ra and two electron beams of radius rb co-propagating and interacting inside the pipe. The simulations involve the interaction of unmodulated (no initial energy modulation) and modulated (energy-modulated, seeded at a given frequency) electron beams. In addition, both cold (monoenergetic) and warm (Gaussian) beams are treated.« less

Drift waves control using emissive cathodes in the laboratory

NASA Astrophysics Data System (ADS)

Plihon, N.; Desangles, V.; De Giorgio, E.; Bousselin, G.; Marino, R.; Pustelnik, N.; Poye, A.

2017-12-01

Low frequency plasma fluctuations are known to be the cause of strong transport perpendicular to magnetic guiding field line. These low frequency drift waves have been studied in linear devices in the laboratory over the last two decades. Their excitation or mitigation have been addressed using different drives, such as ring biasing or electromagnetic low frequency fields. Here we present an experimental characterization of the behavior of drift waves when the profile of the background plasma rotation is controlled using hot emissive cathodes. We show that electron emission from the cathodes modify the plasma potential, which in turn controls the rotation profile. Mitigation or enhancement of drift waves (on the amplitude or azimuthal mode number) is observed depending on the plasma rotation profile.

Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

PubMed

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more areas, even daily pervasive electronics.